The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicondetectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.
The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicondetectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.
A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.
The radiation hardening studies started in the mid decade 1960-1970. To survive the different military or space radiative environment, a new engineering science was born, to understand the degradation of electronics components. The different solutions to improve the electronic behavior in such environments have been named 'radiation hardening' of the technologies. Improvement of existing technologies, and qualification methods have been widely studied. However, on the other hand, specific technologies were developed: the Silicon On Insulator technologies for CMOS or Bipolar. The HSOI3HD technology offers today the highest hardening level for the integration density of hundreds of thousand transistors on the same silicon. Full complex systems could be produced on a single die with a technological radiation hardening and no more system ...
In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.
The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicondetectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.
A new technology called a self-aligned metal-silicide process is described in the fabrication of silicondetectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.
The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.
This chapter is an overview of total-ionizing-dose and single-event hardening techniques and should be used as a guide to a range of research publications. It should be stressed that there is no clear and simple route to a radiation-tolerant silicon integrated circuit. What works for one fabrication process may not work for another, and there are many complex interactions within individual processes and designs. The authors have attempted to highlight the most important factors and those process changes which should bring improved hardness. The main point is that radiation-hardening as a procedure must be approached in a methodical fashion and with a good understanding of the response mechanisms involved.
This report discusses the experimental setup of experiment 814 at Brookhaven AGS. This experiment involves the collision of silicon ions with target nuclei. The detector systems are discussed primarily. (LSP)
Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)
An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicondetector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicondetectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...
The design and first results from a Double Sided Silicon Strip Detector (DSSSD) recently installed at the Lund Nuclear Microprobe facility (NMP) are presented. The detector has 64 sector strips and 32 ring strips, which in combination give more than 2000 detector cells, each with characteristics comparable with a standard surface barrier detector (SBD). The detector has been tested both with radioactive sources and with different ion beams and energies. The most striking features are the high rate virtually pile-up free operation and also the possibility of detailed measurement of angular distributions.
The design and first results from a Double Sided Silicon Strip Detector (DSSSD) recently installed at the Lund Nuclear Microprobe facility (NMP) are presented. The detector has 64 sector strips and 32 ring strips, which in combination give more than 2000 detector cells, each with characteristics comparable with a standard surface barrier detector (SBD). The detector has been tested both with radioactive sources and with different ion beams and energies. The most striking features are the high rate virtually pile-up free operation and also the possibility of detailed measurement of angular distributions.
In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector {approx} 1.13 cm{sup 2} in area is fabricated on a thin ( {approx} 35{mu}m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.
Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an appropriate neutron converter such as 6LiF. These devices have limited detection efficiency of not more than 5%. The detection efficiency can be increased by creating a 3D microstructure of dips, trenches or pores in the detector and filling it with a neutron converter. The first results related to the development of such devices are presented. Silicondetectors were fabricated with pyramidal dips on the surface covered with 6LiF and then irradiated by thermal neutrons. Pulse height spectra of the energy deposited in the sensitive volume were compared with simulations. The detection efficiency of these devices was about 6.3%. Samples with different column sizes were ...
The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicondetectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicondetectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. ...
We describe the continued development of a portable, real-time neutron spectrometer. The spectrometer is composed of two distinct detector systems: a Helium 3 gas filled proportional counter for the lower neutron energy interval between 20 KeV and 2 MeV and a bulk silicon solid state detector for the higher energy interval between 2 MeV and 500 MeV. Modeling and experimental results with mono-energetic neutron beams are reported.
We describe the early stage of development of an engineering model portable, real-time neutron spectrometer. Several systems of two distinct detector types, a helium 3 gas filled proportional counter and a bulk silicon solid state detector, will be necessary to cover the energy range from thermal to 500 MeV. The advantages and disadvantages of using a moderator were investigated experimentally.
The condition for obtaining a calorimetric response linear with energy for hadronic showers and an energy resolution that improves as the incident energy increases is the equalization of the electromagnetic (e) and the hadronic (#pi#) signal responses. This equalization is obtained by exploiting a local hardening effect realized through the insertion of low-Z thin plates between the high-Z absorbers and the active material in a hadronic calorimeter with silicon readout. This effect, which allows the reduction of the calorimeter response to the electromagnetic component of the incoming hadronic showers, has been investigated for different low-Z materials. The relevance of some aspects of this study to the radiation hardness of the calorimeters is also addressed. (orig.).
This document presents the current status of SiD's effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R&D needed to provide the technical basis for an optimised SiD.
The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an ...
Realization of the scale of spectral responsivity of the detectors in the Directorate of Measures and Precious Metals (DMDM) is based on silicondetectors traceable to LNE-INM. In order to realize the unit of spectral irradiance in the laboratory for photometry and radiometry of the Bureau of Measures and Precious Metals, the new method based on the calibration of the spectroradiometer by comparison with standard detector has been established. The development of the method included realization of the System of Spectral Comparisons (SSC), together with the detector spectral responsivity calibrations by means of a primary spectrophotometric system. The linearity testing and stray light analysis were preformed to characterize the spectroradiometer. Measurement of aperture diameter and calibration of transimpedance amplifier were part of the overall experiment. In this paper, the ...
Realization of the scale of spectral responsivity of the detectors in the Directorate of Measures and Precious Metals (DMDM) is based on silicondetectors traceable to LNE-INM. In order to realize the unit of spectral irradiance in the laboratory for photometry and radiometry of the Bureau of Measures and Precious Metals, the new method based on the calibration of the spectroradiometer by comparison with standard detector has been established. The development of the method included realization of the System of Spectral Comparisons (SSC), together with the detector spectral responsivity calibrations by means of a primary spectrophotometric system. The linearity testing and stray light analysis were preformed to characterize the spectroradiometer. Measurement of aperture diameter and calibration of transimpedance amplifier were part of the overall experiment. In this paper, the ...
Researchers at the Laboratory of Nuclear Microanalysis in Besancon (France) are developing and improving radon measurements in order to detect and analyse, more precisely radon emanation anomalies in both fields of Earth Sciences and Radioprotection. In order to characterize radon emanation, two complementary techniques are developed; continuous measurement through a portable proportional counter and passive measurements by nuclear track detectors for both fieldwork and laboratory analysis. A mathematical model is being devised to interpret the nuclear track detector response. This model is performed according to the device characteristics: type of detectors, shape and size of cells and whether a membrane is used or not. In addition to the theoritical study, experimental radon concentration measurements will be reported. (author).
Researchers at the Laboratory of Nuclear Microanalysis in Besancon (France) are developing and improving radon measurements in order to detect and analyse, more precisely radon emanation anomalies in both fields of Earth Sciences and Radioprotection. In order to characterize radon emanation, two complementary techniques are developed; continuous measurement through a portable proportional counter and passive measurements by nuclear track detectors for both fieldwork and laboratory analysis. A mathematical model is being devised to interpret the nuclear track detector response. This model is performed according to the device characteristics: type of detectors, shape and size of cells and whether a membrane is used or not. In addition to the theoritical study, experimental radon concentration measurements will be reported. (author).
Volume sources is used for standard sources by radioactive measurement using Ge semiconductor detector of environmental sample, e.g. water, soil and etc. that require large volume. The commercial volume source used in measurement of the water sample is made of agar-agar, and that used in measurement of the soil sample is made of alumina powder. When the plastic receptacles of this two kinds of volume sources were damaged, the leakage contents cause contamination. Moreover, if hermetically sealing performance of volume source made of agar-agar fell, volume decrease due to an evaporation off moisture gives an error to radioactive measurement. Therefore, we developed the two type methods using unsaturated polyester resin, vinilester resin, their hardening agent and acrylicresin. The first type is due to dispersing the hydrochloric acid solution included the radioisotopes uniformly in each resin and hardening the resin. The ...
A compact, quasi-4? position sensitive silicon array, TIARA, designed to study direct reactions induced by radioactive beams in inverse kinematics is described here. The Transfer and Inelastic All-angle Reaction Array (TIARA) consists of 8 resistive charge division detectors forming an octagonal barrel around the target and a set of double-sided silicon-strip annular detectors positioned at each end of the barrel. The detector was coupled to the ?-ray array EXOGAM and the spectrometer VAMOS at the GANIL Laboratory to demonstrate the potential of such an apparatus with radioactive beams. The 14N(d,p)15N reaction, well known in direct kinematics, has been carried out in inverse kinematics for that purpose. The observation of the 15N ground state and excited states at 7.16 and 7.86 MeV is presented here as well as the comparison of the measured proton angular distributions with DWBA ...
There is significant interest in using computed tomography (CT) for in vivo imaging applications in mouse models of disease. Most commercially available mouse x-ray CT scanners utilize a charge-coupled device (CCD) detector coupled via fibre optic taper to a phosphor screen. However, there has been little research to determine if this is the optimum detector for the specific task of in vivo mouse imaging. To investigate this issue, we have evaluated four detectors, including an amorphous selenium (a-Se) detector, an amorphous silicon (a-Si) detector with a gadolinium oxysulphide (GOS) screen, a CCD with a 3:1 fibre taper and a GOS screen, and a CCD with a 2:1 fibre taper and both GOS and thallium-doped caesium iodide (CsI:Tl) screens. The detectors were evaluated by measuring the modulation transfer function (MTF), noise power spectrum ...
An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.
The purpose was to compare the findings of multi-detector computed tomography (MDCT) in prosthetic valve disorders using the operative findings as a gold standard. In a 3-year period, we prospectively enrolled 25 patients with 31 prosthetic heart valves. MDCT and transthoracic echocardiography (TTE) were done to evaluate pannus formation, prosthetic valve dysfunction, suture loosening (paravalvular leak) and pseudoaneurysm formation. Patients indicated for surgery received an operation within 1 week. The MDCT findings were compared with the operative findings. One patient with a Bjoerk-Shiley valve could not be evaluated by MDCT due to a severe beam-hardening artifact; thus, the exclusion rate for MDCT was 3.2% (1/31). Prosthetic valve disorders were suspected in 12 patients by either MDCT or TTE. Six patients received an operation that included three redo aortic valve replacements, two redo mitral replacements and one Amplatzer ductal occluder ...
It is built and tested a transition radiation detector (TRD) to discriminate positrons from protons in the balloon flight TS 93 experiment. It is presented the TRD performance using flight data obtaining a proton-positron rejection factor of the order of 10{sup -3}. During the 24 hour flight, the data in the momentum range 4-50 GeV/c are collected. Using the TRD together with the Silicon calorimeter, it is achieved an overall rejection factor of about 10{sup -5} of positron against the proton background over the entire momentum range.
We have developed a new type personal dosemeter by using a B-10 doped silicon p-n junction detector with a polyethylene radiator and a polyethylene moderator. The purpose of this study was to develop a real time neutron dosemeter with a nearly flat response in the energy range from thermal to 15 MeV and low angular dependence to the incident neutron direction. The neutron response of the dosemeter was obtained with the Monte Carlo calculation and the monoenergetic neutron experiment in a free air field and also under a condition attached on a phantom.
This report discusses the following topics: Prompt fission neutron energy spectra for {sup 235}U and {sup 239}Pu; Two-parameter measurement of nuclear lifetimes; ``Black`` neutron detector; Data reduction techniques for neutron scattering experiments; Inelastic neutron scattering studies in {sup 197}Au; Elastic and inelastic scattering studies in {sup 239}Pu; and neutron induced defects in silicon dioxide MOS structures.
Conversion electron studies of medium-heavy to heavy nuclear mass systems are important where the internal conversion process begins to dominate over gamma-ray emission. The use of a segmented detector array sensitive to conversion electrons has been used to study multiple conversion electron cascades from nuclear transitions. The application of the silicon array for conversion electron detection (SACRED) for in-beam measurements has successfully been implemented. (orig.). With 2 figs.
The fragment separator at GSI, Darmstadt, has been used to produce and separate very proton rich nuclei in the {sup 100}Sn region. By fragmentation of a {sup 112}Sn beam at 1 A{center_dot}GeV we produced nuclei along the rp-process path between {sup 77}Y and {sup 98}In. By implanting these ions into a silicondetector stack we were able to determine their halflives. Preliminary data are presented.
By using this doping method, silicon semiconductors with extremely uniform dopant distributions can be produced, and this is the dominant advantage of NTD compared with a conventional chemical doping. Good uniformity of a dopant concentration is usually required for high power applications such as thyristor (SCR), IGBT, IGCT and GTO and for special sensors. Achieving an accurate neutron fluence corresponding to a target resistivity as well as a uniform irradiation is the prime target of a neutron irradiation for NTD. Generally, in order to reach an accurate neutron fluence, a real time neutron flux is monitored by a neutron detector such as a Self-powered Neutron Detector(SPND). And, after an irradiation, the total irradiation fluence is confirmed by measuring the absolute activity of a neutron activation sample that has been irradiated with a silicon ingot, and thus the SPND can be properly calibrated. ...
Irradiation of EP-823 (16Cr12MoWsiVNbB) ferritic-martensitic steel with 7-MeV Ni++ ions and with 30- and 70-keV He+ ions at a temperature of 500?C was followed by an increase in the microhardness, which was due to both radiation point defects and changes in the phase composition and the dislocation structure of the steel. It was found that the dependence of the largest relative increase in the microhardness on the concentration of radiation-induced point defects in the near-surface region of the steel under irradiation with different ions correlated with an analogous dependence of the surface segregation of silicon and chromium.
PAMELA is a satellite borne experiment designed to study with great accuracy cosmic rays of galactic, solar, and trapped nature in a wide energy range (protons: 80 MeV-700 GeV, electrons 50 MeV-400 GeV). Main objective is the study of the antimatter component: antiprotons (80 MeV-190 GeV), positrons (50 MeV-270 GeV) and search for antimatter with a precision of the order of $10^{-8}$). The experiment, housed on board the Russian Resurs-DK1 satellite, was launched on June, 15 2006 in a $350\\times 600 km$ orbit with an inclination of 70 degrees. The detector is composed of a series of scintillator counters arranged at the extremities of a permanent magnet spectrometer to provide charge, Time-of-Flight and rigidity information. Lepton/hadron identification is performed by a Silicon-Tungsten calorimeter and a Neutron detector placed at the bottom of the device. An Anticounter system is used offline to reject false triggers ...
AIM: To define the value of digital radiography with a clinical flat panel detector system for evaluation of wrist fractures in comparison with state of the art storage phosphor radiography. MATERIAL AND METHODS: Hard copy images of 26 fractured wrist specimens were acquired with the same exposure dose on a state of the art storage phosphor radiography system and a clinical flat panel detector. Image features like cortical bone surface, trabecular bone, soft tissues and fracture delineation were independently analysed by 4 observers using a standardised protocol. Image quality ratings were evaluated with an analysis of variance (ANOVA). RESULTS: Flat panel detector radiographs were rated superior with respect to cortical and trabecular bone representation as well as fracture evaluation, while storage phosphor radiographs produced better soft tissue detail. CONCLUSION: In some of the observed image quality aspects, the ...
AIM: To define the value of digital radiography with a clinical flat panel detector system for evaluation of wrist fractures in comparison with state of the art storage phosphor radiography. MATERIAL AND METHODS: Hard copy images of 26 fractured wrist specimens were acquired with the same exposure dose on a state of the art storage phosphor radiography system and a clinical flat panel detector. Image features like cortical bone surface, trabecular bone, soft tissues and fracture delineation were independently analysed by 4 observers using a standardised protocol. Image quality ratings were evaluated with an analysis of variance (ANOVA). RESULTS: Flat panel detector radiographs were rated superior with respect to cortical and trabecular bone representation as well as fracture evaluation, while storage phosphor radiographs produced better soft tissue detail. CONCLUSION: In some of the observed image quality aspects, the ...
On the 15th of June 2006 the PAMELA experiment, mounted on the Resurs DK1 satellite, was launched from the Baikonur cosmodrome and it has been collecting data since July 2006. PAMELA is a satellite-borne apparatus designed to study charged particles in the cosmic radiation, to investigate the nature of dark matter, measuring the cosmic-ray antiproton and positron spectra over the largest energy range ever achieved, and to search for antinuclei with unprecedented sensitivity. The apparatus comprises a time-of-flight system, a silicon-microstrip magnetic spectrometer, a silicon-tungsten electromagnetic calorimeter, an anticoincidence system, a shower tail catcher scintillator and a neutron detector. The combination of these devices allows charged particle identification over a wide energy range.
Silicon sensors have about ten times improved radiation hardness around 130 K temperature, compared with the state-of-art sensors close to room temperature. This is based on the Lazarus effect studied by the RD39 Collaboration of CERN. Other benefits of low temperatures will also be discussed. We shall describe the conceptual design of low-mass detector modules cooled using two-phase flow of argon in miniature cooling pipes integrated in the module structure between the sensors and the readout hybrid circuit. The main engineering features of the cooling system and mechanical support structures are discussed, as well as the benefits arising from the operation of the tracker under cryogenic vacuum. 4 Refs.
There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)
A 4{pi} detection system sensitive to light charged particles is being developed at the Laboratori Nazionali di Legnaro (LNL) for the study of reaction mechanisms at energies up to 20 AMeV. The array consists of 262 {Delta}E-E telescopes covering 90% of 4{pi}. Each telescope is made of a 300 {mu}m passivated silicondetector and a 15 mm (or 5 mm) CsI(Tl) crystal read by a photodiode. The system will be operational in the Spring of 1997 and the first experiments will run in the second half of 1997.
During this reporting period the work supported by the US Department of Energy Grant No. DE-FG02-87ER40326.A005 has resulted in two publications and two papers presented at professional meetings. The neutron scattering measurement for this budget period has been completed along with scattering measurements for carbon {sup 88}Sr, {sup 40}Ar, {sup 90}Zr, {sup 208}Pb, {sup 40}Ca and {sup 28}Si. The carbon scattering yield serves to define the detector efficiencies. The silicon sample was available and is of importance in both nuclear physics and reactor physics.
Alpha particles, tritons, deuterons and protons accompanying /sup 252/Cf fission were registered in coincidence with both fission fragments by means of a system containing two-dimensional position-sensitive silicondetectors. Angular distributions, kinetic energy spectra of light charged particles as well as mass distributions of fission fragments in coincidence with light charged particles were measured. The experimental results are compared with some theoretical models.
In the framework of spallation neutron sources and accelerator-driven systems, the international PISA (Proton-induced Spallation) collaboration has initiated measurements of total- and double-differential cross-sections for products of spallation reactions in a wide range of target nuclei (GU) at the COSY proton accelerator in Julich (Germany). The purpose is to study secondary particle production created in structural, window and target materials via proton beams up to 2.5 GeV of incident kinetic energy. Residual nuclei [H, He up to intermediate mass fragment (IMF)] production cross-sections are of great importance for estimating the damage to target and structure materials involving the planned spallation neutron sources, given that the lifetime of window and target materials is directly associated to those cross-sections. The demand for reliable theoretical predictions on production cross-sections is by no means satisfied by the models and codes that are available today. In this ...
PAMELA is a satellite borne experiment designed to study with great accuracy cosmic rays of galactic, solar, and trapped nature in a wide energy range protons: 80 MeV-700 GeV, electrons 50 MeV-400 GeV). Main objective is the study of the antimatter component: antiprotons (80 MeV-190 GeV), positrons (50 MeV-270 GeV) and search for antimatter with a precision of the order of 10^-8). The experiment, housed on board the Russian Resurs-DK1 satellite, was launched on June, 15, 2006 in a 350*600 km orbit with an inclination of 70 degrees. The detector is composed of a series of scintillator counters arranged at the extremities of a permanent magnet spectrometer to provide charge, Time-of-Flight and rigidity information. Lepton/hadron identification is performed by a Silicon-Tungsten calorimeter and a Neutron detector placed at the bottom of the device. An Anticounter system is used offline to reject false triggers coming from the ...
A total dose hardening treatment is applied to SIMOX buried oxides. Total ionizing dose radiation testing is performed on fully-depleted transistors fabricated on both hardened and non-hardened substrates. At 200 krads x-ray dose, the front gate shift is reduced from -0.7 to -0.2 V for FETs built on the hardened wafers.
A high resolution Compton telescope has been identified by the Gamma Ray Astronomy Program Working Group (GRAPWG) as the highest priority major mission in gamma ray astrophysics following GLAST. This mission should provide 25-100 times improved sensitivity, relative to CGRO and INTEGRAL, for MeV gamma ray lines. It must have good performance for narrow and broad lines and for discrete and diffuse emissions. Several instrumental approaches are being pursued to achieve these goals. We discuss issues relating to this mission including alternative detector concepts, instrumental configurations, and background reduction techniques. We have pursued the development of position-sensitive solid-state detectors (Ge, Si) for a high spectral resolution Compton telescope mission. A #approx#1 m2 germanium Compton telescope of position-sensitive germanium detectors was the basis for one of the GRAPWG concepts. Preliminary Monte Carlo ...
A Digital X-ray imaging system using Compton backscattering has been developed to obtain a cross-sectional profile and mass loss of corroded lap-splices of aging aircraft from density variation. A slit-type camera was designed to focus on a small scattering volume inside the material, from which the backscattered photons are collected by a collimated scintillator detector for interpretation of material characteristics. The cross section of the lap-joint is scanned by moving the scattering volume through the thickness direction of the specimen. The mass loss of each layer has been estimated from a Compton backscatter A-scan to obtain the thickness of each layer including the aluminum sheet, the corrosion layer and the sealant. Quantitative information such as location and width of planar corrosion in the lap splices of fuselages is obtained by deconvolution using a nonlinear least-square error minimization method(BFGS method): A simple reconstruction model is also ...
The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the transient-enhanced diffusion of dopants in the creation of ultra-shallow junctions, a vital step in the further miniaturization of device structures, positron beams have played a pivotal role in providing an insight into the mechanisms underlying this phenomenon, being able to detect FV complexes in implanted and annealed samples. Secondary Ion Mass Spectrometry has provided complementary information on fluorine concentrations so that the nature of the F{sub m}V{sub n} complexes can be further assessed. New results on Si and SiGe structures are presented.
InP-quantum dots (QDs) are promising sources of single-photons and as active laser medium, emitting in the red part of the visible spectrum and thus in the range of the highest sensitivity of current silicondetectors. The self assembled QDs were grown by metal organic vapor phase epitaxy and are embedded in between distributed Bragg reflectors (DBRs), afterwards the sample was processed by a Focused Ion Beam to fabricate micro-pillars. The DBRs and the high refractive index step between pillar and air results in a three dimensional mode confinement and highly directed emission and thus higher intensity. We have investigated the mode spectra by micro-photoluminescence measurements for different pillar diameters and compared the spectra with a theoretical model showing up good consistency. Q-factors up to 3600 were achieved.
During this reporting period the work supported by the US Department of Energy Grant No. DE-FG02-87ER40326.A005 has resulted in two publications and two papers presented at professional meetings. The neutron scattering measurement for this budget period has been completed along with scattering measurements for carbon {sup 88}Sr, {sup 40}Ar, {sup 90}Zr, {sup 208}Pb, {sup 40}Ca and {sup 28}Si. The carbon scattering yield serves to define the detector efficiencies. The silicon sample was available and is of importance in both nuclear physics and reactor physics.
Excited states in the T_z=(1/2) nucleus "8"5Mo have been observed for the first time with the reaction "5"8Ni("3"2S,#alpha#n#gamma#) at 105 MeV. #gamma#-ray transitions in this nucleus have been assigned unambiguously by combining the information from the GASP #gamma#-ray array, the ISIS silicon ball, and the n-Ring neutron detector. Two band structures have been observed in this nucleus; they continue the smooth evolution of the known bands from the lighter N=43 isotones and have been tentatively assigned spins and parity on this basis. After reaching a maximum of collectivity at "8"3Zr, the trend with increasing mass is reversed, showing a smaller collectivity at "8"5Mo. The rotational behavior of the observed bands is discussed on the basis of the projected shell model calculations.
X-ray diffraction offers a unique combination of advantages for kinetic study which include the non-destructive nature of the measurement, the use of bulk crystals, and the convenience of the experimental arrangements. These attributes and the availability of position-sensitive detectors and high-flux synchrotron radiation sources make this technique most useful for in situ, dynamical investigations. When using diffraction techniques to determine a diffusion coefficient, the principle of analysis entails a scattering theory and a kinetic model. The former allows the kinetic parameter(s) to be extracted from measured intensity, while the latter relates the kinetic parameter(s) to the diffusion coefficient(s). Three examples are demonstrated: (1) Palladium Silicide (Pd{sub 2}Si) Layer Growth on Silicon, (2) Decomposition of an Ni-12.5at%Si Superalloy, and (3) Short-range Ordering in Cu-Au Solid Solutions.
The description of the high energy particle telescope NINA for the study of cosmic ray nuclei is presented. The instrument will be installed on board of the Resource 01 satellite and will fly on a polar orbit at 690 Km. The telescope consists on a pile of 16 detecting planes each of them is composed by two silicon strip detectors with perpendicular strips and has a total area of 60x60mm{sup 2}. The experiment goals are the study of cosmic ray protons and nuclei in the energy range 12-100 MeV/amu. It will be sensitive to the anomalous component and will also make the observation of the large solar flare events and geophysical phenomena as well. This experiment is the first step of the program RIM whose goal is the satellite study of anti particles in primary cosmic rays.
For charged particle irradiations, the response of an imaging plate (IP) changes around the Bragg peak. Therefore, an appropriate compensation is necessary for the evaluation of dose distribution formed by charged particles such as protons. In this paper, the response of IPs to clinical proton beams is investigated. An experimentally-obtained depth-dose distribution (an ordinary Bragg curve) by a silicon semiconductor detector (SSD) is employed to evaluate the compensation factors as a function of proton penetrating depth, i.e. residual range. A typical dose distribution in a water phantom formed by an L-shaped bolus is measured by IPs and corrected by using the information of those compensation factors; the residual proton range is successfully calculated by the pencil beam algorithm at an arbitrary point. The results show a good agreement with the measurements by the SSD within the rms error of 3.0%.
The personal neutron dosimetry becomes more important with the increasing use of nuclear and accelerator facilities. The solid state track detector, film badge and thermo-luminescent dosimeter have widely been used as passive-type personal neutron dosimeters, but the real-time neutron dosimeter is strongly needed. A real time personal dosimeter which could give neutron dose equivalent over wide energy range from thermal to 10 odd MeV by using two neutron sensors has been developed by our group. For practical commercial product, some changes from these prototype sensors have recently been done by Fuji Electric Co. Ltd. The purpose of this work is the final performance test of the dosimeter just before sale. We checked again about the sensitivity in the monoenergetic neutron field from 8 keV to 15 MeV and in the neutron fields around a few accelerator facilities. (author)
The $\\bar{K}N$ system at threshold is a sensitive testing ground for low energy QCD, especially for the explicit chiral symmetry breaking. Therefore, we have measured the $K$-series x rays of kaonic hydrogen atoms at the DA$\\Phi$NE electron-positron collider of Laboratori Nazionali di Frascati, and have determined the most precise values of the strong-interaction energy-level shift and width of the $1s$ atomic state. As x-ray detectors, we used large-area silicon drift detectors having excellent energy and timing resolution, which were developed especially for the SIDDHARTA experiment. The shift and width were determined to be $\\epsilon_{1s} = -283 \\pm 36 \\pm 6 {(syst)}$ eV and $\\Gamma_{1s} = 541 \\pm 89 {(stat)} \\pm 22 {(syst)}$ eV, respectively. The new values will provide vital constraints on the theoretical description of the low-energy $\\bar{K}N$ interaction.
Space particles act on semiconductor devices by creating charges (electrons, holes) in the silicon and the silicon dioxide, and by creating displacement damage. These primary phenomena alter the electrical parameters of MOS and bipolar devices (threshold voltage V_t, mobility #mu#, conductivity #sigma#, current gain #beta#). The dose rate is not important in space (a few rad (Si)/h) but as the durations of space expeditions are on average from seven to twelve years, the total dose is an aggravating factor in the behaviour of the electrical parameters and also in device operation. The total dose effect from the beginning of charge creation (ionization) to the parameter shifts is reviewed. One can note that this effect is permanent because there will almost always be charge creation in space. Another important phenomenon is called the Single Event Upset (S.E.U.) and caused by the heavy ions and the protons which come from the galactic rays. The ...
A formula is obtained which describes the kinetics of low-temperature radiation hardening caused by creation of dislocation loops of interstitial type during irradiation. The radiation hardening of aluminum and vanadium is estimated using this formula and results of experiments on studying processes of nucleation and growth of interstitial dislocation loops in these materials by transparent electron microscopy. It is shown that the proposed formula is valid for description of the kinetics of low-temperature radiation hardening.
Results on defect structure study and degree of molybdenum radiation hardening irradiated by fission neutrons and medium energy alpha-particles are presented. It is shown that molybdenum irradiation by alpha-particles and neutrons leads to different degree of material hardening for the same damage level. It is established that molybdenum radiation hardening is mainly defined by radiation defect clusters visible in electron microscope whose coefficient of rigidity depends on their size. 5 refs.; 6 figs.; 2 tabs. (author).
Currently there are four different concept studies trying to optimise the detector for the requirements at the ILC. In three of these detector concepts a time projection chamber (TPC) is foreseen as the main tracking device. To achieve the intended spatial resolution of 100 {mu}m, micro pattern gas detectors (MPGD) are considered for gas amplification. The two different MPGDs discussed for the ILC TPC are Micro-Mesh Gaseous Detectors (Micromegas) and Gas Electron Multiplier foils (GEMs). The current thesis shows resolution studies with a TPC prototype equipped with a triple GEM readout structure. A hodoscope made up of silicon strip sensors gives a precision reference track, allowing an unbiased measurement of the spatial resolution. High statistics measurements have been conducted at the DESY test beam facility, which provides positrons with a tunable energy between 1 GeV and 6 ...
Argon ions irradiation of 12% Cr steels and Fe/Cr alloys results in the hardening up to 10000 MPa. This value exceeds the hardening level even for martensitic transformation. Along with the increase of microhardness following irradiation the shape of X-ray graph of the affected materials changes considerable. Hardening value and behavior are determined by temperature radiation doze, preliminary ageing, extent of cold strain and alloying. The odserved phenomenon is supposed to be caused by irradiation-induced structural transformations. Reversibility of radiation hardening of the materials in question was observed.
Complete text of publication follows. According to the new European regulations (Restrictions of Hazardous Substance Directive), there is an emerging demand for environmental friendly metal treatments instead on formerly used chromate conversion coating technique. The aim of the present investigations was to characterise and compare silicon containing protective thin layers on roughened galvanized steel surfaces (with average roughness of 0.7 microns), using FTIR microscopy and imaging techniques. The silicon containing coatings were produced either by Chemical Vapour Deposition (CVD) or by wet chemical treatment using liquid silane. FTIR techniques offer new possibilities in the characterisations and chemical mapping of differently coated thin films, besides SEM+EDS, AFM, nanoindentation, XPS measurements (P. Nemeth et al., Materials Science Forum, 589 (2008) 433-438). All measurements were carried out by a Varian FTS-7000 spectrometer with a ...
A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.
This talk sketches out the main parameters (technology, circuit design) that have an influence on the hardening of digital CMOS integrated circuits. For each technology the more common defects are mentioned. General design rules are proposed to prevent or limit those defects. (D.L.). 2 refs., 2 figs.
Experimental results on study of helium concentration influence on degree of molybdenum radiation hardening for various method of cyclotron doping differing in degree and damage character are presented. It is established that accumulation of helium atoms in molybdenum for simultaneous formation of radiation defects caused by low energetic primary-knocked atoms leads to higher degree of hardening than for high energetic ion irradiation. It is shown that with increase of helium atom concentration the degree of radiation hardening for the same level of damage increases. 4 refs.; 3 figs. (author).
This paper addresses the background and the continuously evolving topics of hardening and electronic components. Typical radiation environments from 1960 are described. Examples of a civilian satellite and of future particle physics colliders help illustrate hardening problems. Effects in components, limits of shielding, and three methods of providing components are described. The authors conclude by focusing on both future trends of radiation environments and anticipated progress in electronics. (authors). 10 refs., 9 figs., 4 tabs.
2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEB). SEB parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p"+ plug modification approach for SEB hardening of power MOSFETs is validated with simulations on actual device structures.
A program was undertaken to radiation harden an existing power integrated circuit technology (BCDMOS) to total dose, gamma dot, SEU, and neutrons. Efforts have centered around hardening and optimizing our CMOS, DMOS, and NPN devices. Initial results indicate a substantial improvement in hardness over our existing commercial technology.
The Guarantee Outline presents the technical demands of design and contents of assessment for radiation hardening in satellite engineering in China. It includes the basis of design in space environment of polar orbit, the contents of design for general radiation hardening, the requirements and assessments of the single-board computer, the requirements of design for circuits (including hardware and software), the choices and assessments for devices, and the primary stipulations for the requirements of design and assessments against the phenomenon of charge and discharge.
In the framework of the RIM (Russian Italian mission) program, PAMELA is the experiment devoted to the accurate measurement of the positron and antiproton spectra from the very low energy thresh-old of 100 MeV up to more than 50 GeV, and to hunt antinuclei with sensitivity better than 10{sup -7} in the helium/helium ratio. A permanent magnet equipped by microstrip silicon sensors, measures the particle momentum with MDR=400 GV/c on GF=25 cm{sup 2} sr. An accurate ToF system, a 19 X{sub o} deep imaging calorimeter, an aerogel Cherenkov counter and a TRD detector complement the spectrometer in order an efficient e{sup +-}/p{sup +-} separation and some light isotope identification capability. The PAMELA experiment will be carried out on a 700 km high polar orbit, on board of the Earth-observation meteor-3A satellite, to be launched at the end of 1988.
The experiment on the determination of the tensor polarization of the residual nucleus is described for the reaction "6Li (#alpha#, #alpha#') "6Li. It is based on the unique connection of polarization tensors t_l_m of the residual nucleus for the reaction (#alpha#, #alpha#') and the angular correlation function W (#omega#_1, #omega#_2) for #alpha#'-particle and decay product of this nucleus, where #omega#_1, #omega#_2 are motion directions of #alpha#'-particle and decay product. The angular correlations of #alpha#'-particle and deuteron are measured for the "6Li (#alpha#, #alpha#', d)"4He reaction on the 27.2 MeV #alpha#-particle beam. The recording system consists of six silicondetectors and provides the energy resolution about 0.8 MeV and the angular resolution #+-# 3 deg. The polarization tensors of the residual nucleus "6Li (2.185 MeV, 3"+) are determined as the result of measuring the angular correlations of products of the "6Li (#alpha#, ...
Neutron radiography (NR) is a useful non-destructive method for determination of hydrogen content in various building and technical materials. Monitoring of transport processes of moisture and hydrogenous liquids in porous building materials is enabled by fast, quasi-real-time NR methods based on novel imaging plate neutron detectors (IP-NDs). Hydrogen content in the samples is determined by quantitative analysis of measured profiles of neutron attenuation in the samples. Detailed description of quantitative NR method is presented by the authors in another accompanying contribution at this conference. Deterioration of building materials is originated by different processes that all require presence of water therefore it is essential to limit or prevent the transport of water through the porous material. In this presentation, results of a study of clay brick impregnation by silicone based hydrophobic agents will be presented. Quantitative ...
This paper reviews various techniques to harden Charged Coupled Device (CCD) sensors and the results after irradiation of three Thomson n buried channel CCDs having a different degree of hardening. It describes the major irradiation effects on CCD performances and it makes a comparison of the results between the different hardening levels. It shows good results on dark voltage after ionizing radiation for TH 7863M device hardened both by design and by operating conditions (MPP mode) with respect to the standard device TH 7863A. The irradiations were performed with "6"0Co or X-ray (10 keV) sources on devices in operating mode. (author). 3 refs., 8 figs.
Neutron irradiation embrittlement of reactor pressure vessel (RPV) steels is one of the critical issues on aging management for long term operation of nuclear power plants. Mechanistic understanding of embrittlement is a key to accurate prediction of embrittlement, especially after long term operation where the mechanical test data are sparse. Since matrix hardening is the source of the embrittlement, we focus on matrix hardening of A533B bainitic pressure vessel steel. Bainitic matrix is composed of lath structure made by ferrite and carbides, therefore it is important to understand how this structure affects hardening behavior, and to understand irradiation response of each phase. As the typical dimension of lath structure of A533B is about one micron, nanoindentation technique is suitable for the estimation of hardening of each phase. MV ion accelerators were used for controlled irradiation because ...
After ten years' investigation of radon's seasonal variation at three very different locations, as well as radon concentration measurements in kindergartens, schools, air-raid shelters and cellars, systematic indoor radon measurements were undertaken in dwellings (residential buildings) of Osijek (East Croatia, 130andpuncsp; omitted000 citizens). Indoor radon was measured by means of the LR-115 SSNT detector at 48 town locations that gave an arithmetic mean of 71.6 Bq/m{sup 3}, standard deviation of 44.0 Bq/m{sup 3} and geometric mean of 60.1 Bq/m{sup 3}, for the radon concentration range from 22.7 to 185.6 Bq/m{sup 3}. Radon measurements, performed by the silicon Radhome detector, did not differ significantly. The empirical frequency distribution of radon concentrations, with the class width of 20 Bq/m{sup 3}, was in accordance with the theoretical log-normal distribution which was shown with the ...
Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.
We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.
Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).
Photodiode Scintillation Detector for Anticoincidence Shielding An important goal of space research is to understand the physics involved in the activity of ...
We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.
Assessments of the hardening and embrittlement of pressure vessel steels and welds as a function of neutron dose use trend curves derived from surveillance programs and accelerated irradiation data. A temperature dependent factor is incorporated for assessing vessel locations operating at different temperatures. As hardening and embrittlement arise from the sum of matrix damage and copper impurity precipitation, the influence of irradiation temperature on each process needs to be established. For irradiations performed below #approx# 300 C recent data shows that the dose-dependent growth of copper precipitates ceases at a mean diameter of about 2 nm that also corresponds to peak hardening and embrittlement by copper. For doses beyond this peak copper dose the property-dependence on irradiation temperature can be identified with that of matrix damage alone. An analysis of several experiments on plate steels, performed at ...
Irradiation of ferritic steels with neutrons in the temperture range of room temperature to #propor to# 450deg C results in lattice hardening, which causes an increase in strength and a decrease in ductility. Eight reduced-activation Cr-W-V stels with chromium concentration varying from 2.25 to 12% were irradiated at 365deg C to #propor to# 7 dpa in the Fast Flux Test Facility. A steel with 2.25% Cr and the combination of 2% W and 0.25% V hardened less than those containing vanadium or tungsten alone or a steel with 1% W and 0.25% V. The amount of hardening was similar for Cr-W-V steels with constant vanadium and tungsten concentrations and containing 2.,25, 5, and 9% Cr; a steel with 12% Cr hardened considerably more. Specimens of two conventional Cr-Mo steels, 9Cr-1MoVNb and 12Cr-1MoVW, were also irradiated, and the hardening of these steels was similar to analogous ...
Comprehensive investigation has been made into the application of the polymerization hardening by radiation, particularly electron beam, to the composites of polymers and other materials. The report is divided into four parts, namely 1) characteristics and problems of the reaction of curing by radiation polymerization, 2) improvement of the bonding capability of high molecular weight materials, 3) bonding by radiation, and 4) composites made by the impregnation and polymerization hardening of monomers. The first part includes the effects of dose rate, temperature rise during the hardening, the peculiarity of electron beam irradiation at high dose rate, reaction environment and additive effects. Main conclusions are as follows: caution must be taken to the amount of residual double bonds because they affect the quality of hardened polymers; the polymerization hardening reaction at ...
A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.
A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.
A study was made into microstructure and hardening in austenitic stainless steel 0Kh18N10T irradiated with neon ions (230 MeV) and neutrons (E_n > 0.1 MeV). The experiments were accomplished using an external beam of U-400 cyclotron (Dubna) and EWA reactor (Poland). The dependences of tensile properties, hardening index, microstructure, dislocation density on damaging dose were determined. An attempt is made to reveal the correlation between an yield strength increment and defect cluster accumulation. The interpretation of variations of mechanical properties and microstructure under irradiation is given.
High temperature deformation behavior of an alpha + beta titanium alloy Ti-3Al-4V has been investigated at 910 deg. C. by using the method of cross head speed cycling. On the basis of flow stress, strain rate and strain rate sensitivity data, the alloy was found to exhibit strain hardening at this temperature which resulted in degradation in superplastic properties of the alloy. A high beta-phase volume fraction and grain-growth in both alpha and beta phases were considered responsible for the observed hardening effect. (author)
Total dose irradiation effects on a VDMOS developed at Institute of Microelectronics, CAS were investigated, particularly the electric parameter changes under different bias conditions. It was found that the breakdown voltage degradation by the irradiation depended mainly on the drain bias, whereas the threshold voltage degradation depended mainly on the gate bias. Thus, an innovative and effective method to domestic VDMOS total dose ionization characterization is that threshold voltage radiation hardening characterization should be tested on gate bias condition, and the breakdown voltage radiation hardening characterization, be tested on the drain bias. (authors)
The notion of hardened systems can be found in several applications (nuclear power plants, alarm systems, research installations..). Their development correspond to the functional necessity to take into account a specific radiative environment. The starting point of each hardening study is the definition of the radiative environmental constraints representative of the application. In addition to these external constraints, the specific functional characteristics of each system are considered: control or interface systems in nuclear industry, in-board control systems, remote handling systems, etc. This paper summarizes the methodology followed according to the experience gained in previous studies and anticipating the future needs. (J.S.). 6 refs., 5 figs.
Tribological performance of alumina and silicon carbide ceramics as well as of the hardened steel 100Cr6 for reference was studied during reciprocating sliding and cavitation erosion in isooctane as substitute of gasoline and in distilled water. It was the aim to characterize effects of surface finish of the specimens and the liquid media on friction, resistance to sliding wear and cavitation erosion. Sliding wear tests were run on the self-mated ceramics and ceramic/steel pairs under conditions of boundary lubrication using a laboratory tribometer with cylinder-on-plate geometry. Vibratory cavitation erosion tests were conducted according to ASTM G 32-92. High initial surface roughness of coarse ground specimens led to a distinct running-in period during sliding contact with a transition from high to low values of friction coefficient and wear intensity. Incubation time was reduced with increasing surface roughness in the cavitation tests. ...
Titanium base 'alpha'-alloys (Pt-7M, RK-20 and Ti-5Al-2Zr-1.5V) are considered for their behaviour under neutron irradiation. The role of alloying elements in radiation hardening is discussed depending of neutron fluence and irradiation temperature. For PK-20 alloy three stages of change in mechanical properties are revealed which are following: incubation period and weak hardening, intense radiation hardening, radiation hardening attenuation. Irradiation temperature rise results in an increase of incubation period and threshold neutron fluence. A special attention is paid to hydrogen absorption in #alpha#-titanium alloys under irradiation. It is concluded that titanium base 'alpha'-alloys are serviceable as structural materials in nuclear plants with allowance made for peculiar features of their radiation behaviour. 4 refs.; 7 figs.; 1 tab.
Formulas were developed based on an aqueous solution of hydrolyzed polyacrylonitrile widely used in the oil industry. The additive used consisted of products of industrial production: synthetic resin TEG-1 with hardening agent PEPA (polyehtylene polyamine) and technical formalin. The mixtures containing about 80-85% by volume 5% hydrolyzed polyacrylonitrile, 10-15% by volume of resin TEG-1 with hardening agent PEPA and 3-5% by volume formalin satisfy the requirements made for the plugging materials. The initial mixtures are distinguished by technological efficiency of preparation and have controllable hardening periods. Physical-chemical properties are given for the gel polymers. In the set of properties, the mixtures based on hydrolyzed polyacrylonitrile, resin TEG-1 with hardening agent PEPA and formalin can be recommended as plugging materials of temporary action with complex treatment of the ...
The #beta#-CEZ alloy : Ti-5%Al-2%Sn-4%Zr-4%Mo-2%Cr-1%Fe is a near #beta# titanium alloy. Since its processing routes include heat treatment (consisting of solution treatment and ageing), it has been decided to study the influence of the #beta# phase stability on #alpha# phase precipitation and hardening kinetics. Small sized specimens, coming from industrial heats, have been heat treated above and below the #beta# transus, and then water quenched. Therefore, several degree of #beta# stability are obtained. When it is increased (i.e. the solution treatment temperature is lowered), #alpha# or #omega# phases precipitations are delayed, as well as the hardening phenomena. Moreover, the #omega# stability domain is reduced. The mechanisms of #alpha# or #omega# precipitation are discussed, and related to the hardening kinetics. (orig.).
High temperature deformation behavior of an alpha + beta titanium alloy Ti-3Al-2.5V has been investigated in the temperature range 830 deg. C to 910 deg. C by using the method of cross head speed cycling. On the basis of flow stress-strain rate and strain rate sensitivity data, it was found that the alloy exhibits a hardening effect in the entire temperature range studied, amount of hardening being significant at the highest test temperature of 910 deg. C which resulted in a degradation of superplastic properties of the alloy. Grain growth in beta-phase due to strain was considered responsible for the hardening effect observed.
A fully lamellar ferrite/cementite nanostructure was designed in a low C steel by using a specific thermal treatment. The strengthening of such microstructure has been investigated as a function of prestrain by rolling up to a deformation of 300%. As in usual pearlitic structure, its work-hardening shows no saturation and its elongation to fracture remains rather constant instead of decreasing drastically as conventional steels. The hardening by a similitude effect is thus not the privilege of pearlitic steels. Nevertheless, its lower initial work-hardening rate at low strain compared to an equivalent pearlitic steel and a lower hardening potential at high strain let us suspect major differences in the nature and the behaviour of ferrite channels in relation to the morphogenesis of the mic...
The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).
We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.
The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.
"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."
For the first time a segmented n-type HPGe detector was operated directly submerged in liquid nitrogen over a long period. As this kind of detector is envisioned to be used in GERDA phase II, it was operated with a low mass signal cable with snap-contacts and mounted in a low-mass copper holder. The detector performance was stable over 146 days, indicating that neither detector nor contacts deteriorated.
In this article, the author presents the main technological solutions, available or in development, on X-ray detectors in order to obtain a digital image in biomedical radiography or in industrial radiography: linear x-ray detectors and bidimensional x-ray detectors (memory radioluminescent screens, matrix plan detectors).
The operation principle, construction and characteristics of the Bragg curve spectroscopy detector (BCS detector) are described. The electric field of the BCS detector is parallel to the particle trajectories. The detector was tested by 8.78 MeV and 6.02 MeV #alpha# particles from a ThC-ThC's source. The energy resolutions are 1.5% and 2.6% respectively for two groups of #alpha# particles, and the charge resolution is 2.7%. Further test experiments with heavy ions will be arranged.
Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...
Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...
The role of helium in a process of embrittlement and hardening of RAFM steels was investigated in EUROFER97 based experimental heats, ADS2, ADS3 and ADS4, that were doped with different contents of natural B and the separated 10B-isotope (0.008-0.112 wt.%). The neutron irradiation of the boron doped and the reference RAFM steels was performed in the Petten High Flux Reactor up to 16.3 dpa at different temperatures between 250 and 450 deg. C. The embrittlement behaviour and hardening was investigated by instrumented Charpy-V tests with subsize specimens. Irradiation lead to generation of 84, 432 and 5580 appm He in ADS2, ADS3 and ADS4 steels, respectively. At irradiation temperatures Tirr ? 350 deg. C the boron doped steals show progressive embrittlement and reduction of toughness with increasing helium amount. The analysis of the hardening vs. embrittlement behaviour at Tirr ? 350 deg. C reveals ...
The effect of solution treatment temperature and oxygen content on the microstructure and age hardening response of the metastable beta alloy Ti-11.5Mo-6Zr-4.5Sn have been studied. Kinetics of formation of the equilibrium alpha-phase and the metastable om...
A study is made of the mechanical properties of vanadium irradiated with fast neutrons up to dose 8.6.10"-"4 dpa, as a function of the temperature of post-radiation annealing. The radiation-annealing hardening (RAH) effect is observed at 300"oC, in agreement with previous studies. It is established for the first time that RAH is accompanied by fall in ductility. A phenomenological model is described which explains the dependence of RAH on radiation dose and temperature, as well as on the content of chemically active alloying impurities. (author).
Mechanical properties of vanadium, irradiated with fast neutrons up to 8.6x10"-"4 dpa depending on postirradiation annealing temperature, are studied. It is shown that radiation-annealing hardening (RAH) is observed at 300 deg C, which agrees with earlier performed studies. It is first stated that RAH is accompanied by plasticity decrease. Phenomenological model permitting to explain RAH dependence on irradiation temperature and dose and also on content of chemically active alloying impurities is suggested.
SGS-Thomson and CNES significantly hardened a power MOSFET transistor against heavy ions and cobalt 60 total dose. The influence of the major technological steps on the component radiation sensitivity has been analyzed. Then the optimization has been carried out, using booth computerized simulation and experimental data. (D.L.). 5 refs., 8 figs.
An evaluation of eastern shale oil (ESO) residue as an asphalt additive to reduce oxidative age-hardening and moisture susceptibility was conducted. Rheological and infrared analyses of the unaged and aged asphalts and blends were then conducted to evaluate oxidative age-hardening. 18 refs., 5 figs., 6 tabs.
Power devices such as MOSFETSs and IGBTs, include parasitic structures that can give rise to destructive failures such as breakdown and latch-up. To determine a suitable strategy for device radiation hardening, simulation software like MEDICI-2D can be used to model the effects of technological modifications and device parameters that are difficult to measure experimentally. (authors).
High-spin states in the mirror pair nuclei {sup 49}Cr and {sup 49}Mn and their cross-conjugate partners, the mirror pair {sup 47}V and {sup 47}Cr have been investigated using experimental {gamma}-ray spectroscopic techniques. The combination of high-efficiency EUROBALL cluster Germanium detectors and clean exit-channel gating afforded by a 31-element silicon ball used in conjunction with a 15-detector neutron wall allowed a revision and extension to the energy level schemes of all four nuclei up to J{sup {pi}}=31{sup -}/2. The difference in excitation energy between states of equivalent spin in the parent nucleus and its analogue partner have thus been established for both mirror pairs up to the f{sub 7/2}-shell band terminating state for the first time. This difference is assumed to be due almost entirely to the Coulomb effect and is therefore called the Coulomb energy difference (CED). The variation in the CED with spin ...
Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.
Generally, neutron, ion and electron Irradiations cause a substantial amount of hardening and significantly alter the deformation behavior of metals and alloys at relatively low irradiation temperatures. A radiation hardening is caused by the formation of microstructural defects such as dislocation loops, voids and precipitates under irradiation. Therefore, it is important to have a better knowledge of the irradiation induced microstructural defects under irradiation condition. As a part of the National mid- and long-term atomic energy R and D program, we are dealing with the radiation hardening behavior in Fe-Cr binary alloy. Fe-Cr binary alloy is a base alloy of Ferritic/Martensitic steel(F/M steel) planning to use for the Gen IV nuclear system. In this work, we investigated the radiation hardening and microstructural defect evolution in ion irradiated Fe-Cr alloys with irradiation temperature using ...
Irradiation response on the tensile properties of 9Cr-2W steels has been investigated following FFTF/MOTA irradiations at temperatures between 646 and 873 K up to doses between 10 and 59 dpa. The largest irradiation hardening accompanied by the largest decrease in the elongation is observed for the specimens irradiated at 646 K at doses between 10 and 15 dpa. The irradiation hardening appears to saturate at a dose of around 10 dpa at the irradiation temperature. No hardening but softening was observed in the specimens irradiated at above 703 K to doses of 40 and 59 dpa. Microstructural observation by transmission electron microscope (TEM) revealed that the dislocation loops with the a left angle 100 right angle type Burgers vector and small precipitates which were identified to be M_6C type carbides existed after the irradiation at below 703 K. As for the void formation, the average size of voids increased with increasing ...
Fe-Cu binary alloys are often used to mimic the behaviour of reactor pressure vessel steels. Their study allows identifying some of the defects responsible for irradiation-induced hardening. But recently the influence of manganese and nickel in low-Cu steels has been found to be important as well. In contrast with existing models found in the literature, which predict that hardening saturates after a certain dose, Fe alloys containing nickel and manganese irradiated in a material test reactor (BR2) show a continuous increase of hardening, up to doses equivalent to about 40 years of operation. Considerations based on positron annihilation spectroscopy analyses suggest that the main objects causing hardening in Cu-free alloys are most probably self-interstitial clusters decorated with manganese. In low-Cu reactor pressure vessel steels and in Fe-CuMnNi alloys, the main effect is still due to Cu-rich ...
This research report discusses the radiation hardening of a commercially available mobile robot, the REMOTEC ANDROS. This hardening effort is culminating in the availability of a megarad hardened mobile platform to access areas in nuclear facilities with extremely high levels of radiation (0.1 to 1 Mrad). These radiation levels may be encountered both during routine repair and monitoring activities and accident situations. The project has completed a phase-I U.S. Department of Energy Small Business Innovative Research contract and is now in a phase-II effort with completion scheduled in early 1995. The research involves the evaluation of the material and electrical components of an ANDROS robot to determine the anticipated radiation hardness of the current production version and evaluation of the components that must be replaced or modified to harden the system to higher radiation levels. The work being ...
The effects of key metallurgical variables on the low fluence hardening in a set of A533B model steels were evaluated over a wide range of irradiation temperatures. Above about 163 degrees C hardening increased with higher copper and nickel contents, as is typical of the pressure vessel operating regime around 290 degrees C. However, at 121 degrees C the hardening was generally lower and unaffected by copper and nickel variations. This observation of decreased hardening with lower temperature (e.g. an open-quotes invertedclose quotes temperature dependence) is tentatively attributed to a reduced contribution of copper precipitation. Tensile data for a set of commercial steels with a range of (uncontrolled) compositions also showed minimal sensitivity to copper variations at 121 degrees C. Unlike the hardness data no systematic reductions in the yield stress increases were observed between 163 and 121 ...
A prototype detector based on the inclined boron layer principle is introduced. For typical measurement conditions at the Liquids Reflectometer at the Spallation Neutron Source, its count rate capability is shown to be superior to that of the current detector by nearly two orders of magnitude.
A prototype detector based on the inclined absorber layer principle is introduced. For the Liquids Reflectometer at the Spallation Neutron Source, it is shown to be a significant improvement over its current detector, which imposes an instantaneous count rate limitation of 50 kcps.
This report covers the gamma detectors, measurement instrumentation, and testing results of a system developed at Los Alamos National Laboratory. This system monitors the process liquid waste streams at the Plutonium Facility (TA-55) for the presence of radioactive contamination. The detectors are at various points on the acid, caustic, and industrial waste lines. Two of the detectors are on the sanitary sewer lines from the facility. A custom interface unit associated with these two detectors furnishes the facility operation center with a notification of the detection of material. All of the detectors furnish measurement information to a central computer system for storage and trending.
The energy-integrated reaction cross-sections of several neutron-rich nuclei ({sup 17-22}N, {sup 19-24}O, {sup 21-27}F, {sup 23-30}Ne, {sup 26-33}Na, {sup 28-35}Mg, {sup 31-38}Al, {sup 33-40}Si, {sup 36-42}P, {sup 39-44}S, {sup 42-45}Cl, {sup 45,46}Ar), measured at intermediate energy (30-65 A-bar MeV), via direct method, are presented. Silicondetectors have been used as the active target as well as for particles identification. The reduced strong absorption radii r{sub 0}{sup 2} are extracted and compared to the data available from the literature. New measurements for 19 nuclei ({sup 27}F, {sup 27,30}Ne, {sup 33}Na, {sup 28,34-35}Mg, {sup 36-38}Al, {sup 38-40}Si, {sup 41-42}P, {sup 42-44}S, {sup 45}Cl) are revealed. From the study of the isospin dependence of the reduced strong absorption radius, a new quadratic parameterisation of the nuclear radii in the closed shell regions N=8 and N=28, is proposed. According to this parameterisation, the ...
The {ital L}{sub 2}-{ital L}{sub 3} Coster-Kronig transition probability ({ital f}{sub 23}) in Tm was measured by multiparameter {ital K} versus {ital L} x-ray coincidence techniques. The Tm x rays were obtained from a radioactive source of {sup 169}Yb and were detected with cooled germanium and silicondetectors of high-energy resolution. Corrections were applied for the contribution of {ital K}{alpha}{sub 1} x rays to the {ital K}{alpha}{sub 2} x-ray peak and for the contribution of unresolved {ital L}{eta} x rays to the {ital L}{alpha}{sub 1,2} x-ray peak. The contribution of {ital K}{alpha}{sub 1} x rays to the {ital K}{alpha}{sub 2} x-ray peak was determined solely from the results of the coincidence measurements using a method of data analysis which was previously described elsewhere. The contribution of {ital L}{eta} x rays to the {ital L}{alpha}{sub 1,2} x-ray peak was determined from the coincidence measurements and published values of ...
The {ital L}{sub 2}-{ital L}{sub 3} Coster-Kronig transition probability ({ital f}{sub 23}) in Tm was measured by multiparameter {ital K} versus {ital L} x-ray coincidence techniques. The Tm x rays were obtained from a radioactive source of {sup 169}Yb and were detected with cooled germanium and silicondetectors of high-energy resolution. Corrections were applied for the contribution of {ital K}{alpha}{sub 1} x rays to the {ital K}{alpha}{sub 2} x-ray peak and for the contribution of unresolved {ital L}{eta} x rays to the {ital L}{alpha}{sub 1,2} x-ray peak. The contribution of {ital K}{alpha}{sub 1} x rays to the {ital K}{alpha}{sub 2} x-ray peak was determined solely from the results of the coincidence measurements using a method of data analysis which was previously described elsewhere. The contribution of {ital L}{eta} x rays to the {ital L}{alpha}{sub 1,2} x-ray peak was determined from the coincidence measurements and published values of ...
There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass information which enables the ...
Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...
This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured ...
The use of standard cementitious material creates pulses of pH in the magnitude of 12-13 in the leachates and release alkalis. Such a high pH is detrimental and also unnecessarily complicates the safety analysis of the repository. As no reliable pH-plume models exist, the use of products giving a pH below 11 in the leachates facilitates the safety analysis. Also, according to current understanding, the use of low-pH cement (pH = 11) will not disturb the functioning of the bentonite, although limiting the amount of low-pH cement is recommended. A result of the project is that there are both low-pH cementitious material for grouting larger fractures (= 100 {mu}m) and non-cementitious material for grouting smaller fractures (< 100 {mu}m) that will, after further optimisation work, be recommended for grouting of deep repositories. This project concentrated on the technical development of properties for the low pH grouts. Long-term safety and environmental aspects and durability of ...
A large matrix of simple alloys and complex commercial type steels was irradiated over a range of fluxes at 60 FC up to a fast fluence of about 3 x 10"2"2 n/m"2. Combined with data in the literature, these results show a negligible effect of flux on irradiation hardening in the range of 2 x 10"1"3 to 5 x 10"1"8 n/m"2-s. This observation lends indirect support to the proposal that the accelerated embrittlement in the High Flux Isotope Reactor surveillance steels was due to an anomalously high level of damage from gamma rays. A weak dependence of hardening on a number of elements, including copper, nickel, phosphorus, molybdenum and manganese, can be described by a simple empirical chemistry factor. Particular combinations of elements resulted in hardening differences of up to about 60% in the complex commercial type steels and up to about 100% in simple model alloys. Direct effects of microstructure appear to be minimal. ...
In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.
Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)
A method, system and a radiation detector system for use therein are provided for determining the depth distribution of radiation-emitting material distributed in a source medium, such as a contaminated field, without the need to take samples, such as extensive soil samples, to determine the depth distribution. The system includes a portable detector assembly with an x-ray or gamma-ray detector having a detector axis for detecting the emitted radiation. The radiation may be naturally-emitted by the material, such as gamma-ray-emitting radionuclides, or emitted when the material is struck by other radiation. The assembly also includes a hollow collimator in which the detector is positioned. The collimator causes the emitted radiation to bend toward the detector as rays parallel to the detector axis of the detector. The ...
Fatigue tests were accomplished with a series of specimens doped with trace elements of a hardened Fe-Ni-Cr alloy, cast and hardened with intermetallic phases for determining the influence of these elements on the high temperature strength properties. The results of extensive fatigue tests show that even small contents of Te, Bi, Se, Pb, Tl and Zn considerably influence the life and creep processes especially after longer running periods, when added individually or combinedly. In contrast to this, the fatigue ductility is reduced by trace element additions even with short running periods. The order in which the metallic trace elements influence the fatigue properties nearly correlates with earlier work concerning Ni- and Co-superalloys. (orig.)
The age hardening behavior of Al-4.5%Cu alloy composite reinforced with zircon sand particulates and produced by stir casting route has been investigated in different quenching media viz, water, oil, and salt brine solution (7wt%). Optical microscopy of the as cast alloy composite indicates that the matrix of the composite has the cellular structure. Copper rich CuAl2 precipitates have been found near particle matrix interface. The results of ageing demonstrate that the microhardness of age hardenable Al-Cu based alloy composites depend on the quenching medium in which they are heat treated. Salt brine quenching is faster as compared to water and oil, even if higher strength is obtained but cannot be used for complex shapes and thin sections where oil quenching is the alternative due to mi...
Defect cluster formation in 14-MeV neutron irradiated polycrystalline copper has been observed by transmission electron microscopy (TEM) and correlated with the increase in yield stress. The measurements indicate that the radiation hardening component of the yield strength in polycrystals is not directly additive to the unirradiated yield strength. A transitional behavior was observed for radiation hardening at low fluences, which produces an anomalous variation of the defect cluster barrier strength with fluence. The behavior is attributed to the effect of grain boundaries on slip band transmission. An upper limit for the room temperature barrier strength of defect clusters in neutron-irradiated copper was determined to be #alpha#=0.23. (orig.).
Due to size and costs of big slewing rings, the common methods of experimental trial and error together with destructive test methods for verification of the inductive hardening process are limited. Thereby it is essential to simulate the hardening process in addition to the tests. With these simulations, it should be possible to get conclusions for the hardening pattern, the residual stress and distortion. With actually existing methods a fully three dimensional simulation is extremely time consuming. For that reason, a new method was developed that combines two dimensional with three dimensional simulation to shorten the time for calculation tremendously. (orig.)
Nano indentation analysis and transmission electron microscopy observation were performed to investigate a microstructural evolution and its influence on the hardening behavior in Fe-Cr alloys after an irradiation with 8 MeV Fe4+ ions at room temperature. Nano indentation analysis shows that an irradiation induced hardening is generated more considerably in the Fe-15Cr alloy than in the Fe-5Cr alloy by the ion irradiation. TEM observation reveals a significant population of the a0 dislocation loops in the Fe-15Cr alloy and an agglomeration of the 1/2a0 dislocation loops in the Fe-5Cr alloy. The results indicate that the a0 dislocation loops will act as stronger obstacles to a dislocation motion than 1/2a0 dislocation loops.
Bent specimens of A533B steel (0.16wt% Cu) were irradiated at 290degreeC to 1dpa with 6.4MeV Fe3+ ions. Calculated tensile stresses at the irradiated surface were set to 0, 250, 500 and 750MPa. The specimens were subjected to hardness measurements, transmission electron microscopy (TEM) observations and three-dimensional atom probe (3DAP) analysis. The radiation-induced hardening decreased with increasing stress to 500MPa which was near the yield strength. TEM and 3DAP results showed that well-defined dislocation loops and solute clusters were formed. The diameter of dislocation loops increased and the number density decreased when the stress was applied, whereas the diameter and number density of solute clusters decreased. The hardening was mainly attributed to solute cluster formation. A...
By method of transmission electron microscopy and measuring of microhardness the peculiarities of influence of radiation defect clusters on molybdenum radiation hardening along range path of protons with 30 MeV initial energy are studied. Decrease effect of hardening growth value and even its absence depending on irradiation dose in the range of 10-20 MeV proton energies in presence of high density of radiation defect dispersed clusters is revealed. It is shown experimentally that this effect is connected with accumulation of hydrogen up to not very high concentrations (not more than 5x10"-"4 at.%) at the expense of elastic and inelastic proton scattering. 5 refs.; 5 figs.
Precipitation-hardened single crystals of a beta (bcc) Ti--40 at. percent V--1.0 at. percent Si alloy were deformed in compression at 77 and 298"0K. The dependence of the yield stress upon aging time at 843"0K for solution-treated crystals shows two maxima which are caused by silicide precipitates. The orientation dependence of the yield stress and of the active macroscopic slip plane were determined as a function of aging time. The solution-treated as well as aged crystals exhibit an asymmetry of both the yield stress and the plane of slip, the degree of asymmetry being larger at 77 than at 298"0K. The asymmetry of slip and yielding is not affected by the presence of precipitation hardening. Results indicate that the effect of the dislocation core structure on dislocation motion is independent of the presence of precipitates. (auth).
This paper provides a physically-based engineering model to estimate radiation hardening of 9%Cr-steels under both displacement damage (dpa) and helium. The model is essentially based on the dispersed barrier hardening theory and the dynamic re-solution of helium under displacement cascades but incorporating a number of assumptions and simplifications [Trinkaus, J. Nucl. Mater. 318 (2003) 234-340]. As a result, the kinetics of the damage accumulation kept fixed, its amplitude is fitted on one experimental condition. The model was rationalized on an experimental database that mainly consists of 9%Cr-steels irradiated in the range of 50-600degreeC up to 50dpa and with a He-content up to 5000appm. The test temperature effect is taken into account through a normalization procedure based on the...
The detection efficiency of a lithium glass detector was calculated using MCNP code, and the calculation was compared with the published results in Pulsed Sphere Plan. A lithium glass detector of our own was made, and its neutron efficiency was calculated. The calculated neutron efficiency was verified with both pulsed and steady DD neutrons. Characteristics of Neutron response of "6Li detector was discussed. (authors)
A possibility is considered or reducing the surface heterogeneity effect of an item being tested on the result of radiation flaw detection by means of signal delay of one of detectors in a two-channel radiometric flaw detector. The exposure of a translationally moving item has been studied as well as an external exposure of a rotating hollow item.
A network of second-generation low-temperature gravitational radiation detectors is nearing completion. These detectors, sensitive to mechanical strains of order 10"-"1"8, are possible because of a variety of technical innovations that have been made in cryogenics, low-noise superconducting instrumentation, and vibration isolation techniques. Another five orders of magnitude improvement in energy sensitivity of resonant-mass detectors is possible before the linear amplifier quantum limit is encountered. 33 references, 3 figures, 1 table.
Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.
Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.
Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...
An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available
Counting characteristics of X-ray detectors fabricated from indium-doped, gallium-doped, and chlorine-doped CdTe have been investigated. The detectors fabricated from indium-doped and gallium-doped crystals showed radiation-induced polarization, namely, a progressive decrease of count rate with an increase of photon fluence in the high-photon-fluence region, while the detectors fabricated from chlorine-doped crystals did not. Results from current-voltage characteristics of the detectors indicated that the different counting characteristics of these detectors originated from the difference in internal electric fields in each detector.
To investigate the characteristics of a reactor and a neutron generator, a small scintillation detector with an optical fiber with ThO_2 has been developed to measure fast neutrons. However, experimental facilities where "2"3"2Th can be used are limited by regulations, and S/N ratio is low because the background counts of this detector are increase by alpha decay of "2"3"2Th. The purpose of this study is to develop a new optical fiber detector for measuring fast neutrons that does not use nuclear material such as "2"3"2Th. From the measured and calculated results, the new optical fiber detector which uses ZnS(Ag) as a converter material together with a scintillator have the highest detection efficiency among several developed detectors. It is applied for the measurement of reaction rates generated from fast neutrons; furthermore, the absolute detection efficiency of this ...
This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.
Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)
The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).
A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...
A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.
... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...
Simultaneous nitriding and ageing heat treatments of precipitation hardenable tool steel was carried out inside a DC-pulsed plasma nitriding reactor. A single heat treatment cycle was done, as the plasma nitriding and age hardening processes occur approximately at the same ranges of temperatures and times. Specimens of Cr-Ni-Mo-Al age hardenable steel, in the solubilized and solubilized and aged conditions, were tested. Plasma nitriding and ageing, carried out at 500 deg. C for times ranging between 2 and 8 h, increased the surface hardness up to 1000 HV, producing case depths between 100 and 200 {mu}m. The core hardness of solubilized samples increased from 30 to 39 Rockwell C after the plasma nitriding treatment proving the possibility of nitriding and ageing at the same treatment cycle. The pre-aged samples did not show any overageing after the simultaneous plasma nitriding and ageing treatments. The corrosion resistance ...
Simultaneous nitriding and ageing heat treatments of precipitation hardenable tool steel was carried out inside a DC-pulsed plasma nitriding reactor. A single heat treatment cycle was done, as the plasma nitriding and age hardening processes occur approximately at the same ranges of temperatures and times. Specimens of Cr-Ni-Mo-Al age hardenable steel, in the solubilized and solubilized and aged conditions, were tested. Plasma nitriding and ageing, carried out at 500 deg. C for times ranging between 2 and 8 h, increased the surface hardness up to 1000 HV, producing case depths between 100 and 200 #mu#m. The core hardness of solubilized samples increased from 30 to 39 Rockwell C after the plasma nitriding treatment proving the possibility of nitriding and ageing at the same treatment cycle. The pre-aged samples did not show any overageing after the simultaneous plasma nitriding and ageing treatments. The corrosion resistance ...
An overview of the operations of Sandia`s Microelectronics Development Lab (MDL) is to develop radiation hardened IC, but techniques used for IC processing have been applied to a variety of related technologies such as micromechanics, smart sensors, and packaging.
The methods of surface modification of Ti-Zr alloy by laser treatment are considered. Characteristics of laser modification without- and with surface melting and with melting in different gaseous environments and with nickel microalloying are presented. Maximum depth, hardness and corrosion resistance are observed under nickel laser alloying.
Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.
The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.
The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).
An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.
According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.
Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.
Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.
High (spatial) resolution imaging detectors for X-ray astronomy were developed. Several prototype detectors built and their feasibility and baseline performance were assessed. Two of these detector types are proposed for investigations on the advanced X-ray astrophysics facility (AXAF). The readiness of a new X-ray imaging system, the charge coupled device (CCD) imaging specctrometer is outlined, and state of the art performance parameters for microchannel plate (MCP) and CCD detectors are measured. Laboratory facilities and procedures for coating MCP are developed general high resolution imagery systems are analyzed.
High (spatial) resolution imaging detectors for X-ray astronomy were developed. Several prototype detectors built and their feasibility and baseline performance were assessed. Two of these detector types are proposed for investigations on the advanced X-ray astrophysics facility (AXAF). The readiness of a new X-ray imaging system, the charge coupled device (CCD) imaging specctrometer is outlined, and state of the art performance parameters for microchannel plate (MCP) and CCD detectors are measured. Laboratory facilities and procedures for coating MCP are developed general high resolution imagery systems are analyzed.
This paper reports that, to obtain better simulation results for a Canada deuterium uranium (CANDU) reactor operation, a new simulation method is developed that uses actual detector readings as a correction factor. Detector readings from a CANDU reactor are used to correct the calculated flux distribution during core calculation iterations. A suitable function is found to describe the relationship between the detector flux and the fluxes of mesh points around the detector. The new simulation method is tested by performing numerical calculations for the Wolsung reactor (a CANDU-600). The results show that the new method predicts the core state more accurately with fewer iterations.
Effect of strain and temperature on high temperature deformation properties of an alpha + beta titanium alloy Ti-6Al-4V has been investigated in the temperature range 800 to 910 deg. C by using the method of cross head speed cycling. On the basis of flow stress strain rate-strain rate sensitivity data and microstructural studies of the undeformed and deformed regions of tensile test pieces, both strain introduced hardening and softening effects were observed during the course of deformation which could be associated with grain coarsening and refining respectively. (author)
Field Programmable Gate Arrays (FPGAs) are being used in space applications because of attractive attributes: good density, moderate speed, low cost, and quick turn-around time. However, these devices are susceptible to Single Event Upsets (SEUs). An approach using triple modular redundancy (TMR) and feedback was developed for flip-flop hardening in these devices. Test data showed excellent results for this circuit topology. Total dose and Single Event Effect (SEE) testing have been performed on recently released technologies. Failures are analyzed and test methodology is discussed.
The Joint Work Session of the ITER CDA (Conceptual Design Activities) by four parties, (eg. Japan, USA, USSR and EC), which has continued during 3 years from May 1988 to December 1990 was completed successfully. During the CDA, overall diagnostic systems for the next generation machine was performed for the first time and the principal tasks of Diagnostic research and development (R and D) are identified. In this paper, radiation hardening problems, which should be solved for the period 1991 through 1996 of the ITER EDA (Engineering Design Activities), are described. (author).
The authors have measured the noise of MOS transistors of the United Technology Microelectronics Center (UTMC) 1.2 [mu]m radiation hardened CMOS P-well process from the weak to moderate inversion region. The noise power spectral densities of both NMOS and PMOS devices were measured from 1 KHz to 50 MHz. The bandwidth was chosen such that the important components of the spectral densities such as the white thermal noise and the 1/f noise could be easily resolved and analyzed in detail. In this paper the effects of different device terminal DC biases and channel geometries on the noise are described.
Some results on mechanical property study of copper and titanium subjected to impact load and next to neutron irradiation are presented. It was shown that shock wave influence involves a substantial shape change of the stress-strain diagram and of respective mechanical characteristics. Yield- and ultimate strength were substantially increased, as well as hardness with a considerable drop of plasticity. Also a heat stability of copper and titanium specimens was studied after being treated with shock-waves and neutron radiation. Results are given of electron microscope study of titanium structure sfter explosion hardening, which caused decomposition of hydride segregations in titanium and increased dislocation density.
There is proposed the nonlinear model of dose dependence saturation of the yield strength on the base of the vacancy and interstitial barrier interaction in this work. Processes of mutual recombination of vacancy and interstitial barriers and formation of vacancy and interstitial clusters are taken into consideration. In the framework of the model, the analytical equations corresponding to the evolution of the barrier densities and yield strength are obtained. It is shown that the yield strength of irradiated materials decreases with the increasing intensity of barrier recombination processes, the dependence being nonlinear. Also it is shown that the model is valid both for low doses and large doses on the stage of radiation hardening.
The procedure of charge-coupled devices (CCD) are investigated by using MOS capacitors for enhancing their ionizing radiation tolerance. Authors have found that the gate oxidation temperature, thickness of SiO_2 gate insulator and high temperature processes after gate oxidation are crucial for determining the radiation tolerance of the devices, and proposed to decrease the thickness of gate insulator, perform gate oxidation at 1000 deg C by means of dry oxidation and minimize the number of high temperature procedure steps after gate oxidation. All stated above is a necessary preparation for priducing radiation hardened charge-coupled devices.
Corrosion testings of model alloys, corresponding by chemical composition to simple and complex-alloyed #gamma#- and #gamma#'-phases of nickel heat-resistant alloys are conducted in sodium sulfate and chloride melts. It is ascertained that heat resistant nickel alloys containing over 50 % of hardening #gamma#'-phase, are subject to disastrous sulfide corrosion (SC). Resistance against SC alloys containing below 50 % of #gamma#'-phase is determined by the resistance of #gamma#-solid solution. 10 refs., 3 figs., 2 tabs.
The rate of corrosion of hardened cement paste in solutions of nitric, hydrochloric, sulfuric, acetic and formic acids was compared. Corrosion in solutions of acetic and nitric acids with different concentrations was studied in more detail. The results made it possible to obtain the relationships expressing the influence of concentration and the time of action of acid solutions on the depth of corrosion. The rates of corrosion in nitric acid solutions during the first 3 years were about 2 to 4 times that in acetic acid solutions, depending on the concentration.
Full text of publication follows: Radiation hardening and embrittlement due to high-energy neutron radiation around 623 K are the important issues on reduced-activation ferritic/martensitic (RAF/M) steels. It is expected that the improvement of radiation hardening might be one of effective ways to control the mechanical properties of RAF/M after irradiation. It has been reported that the weld joint has less hardening than the base metal from the tensile test results of TIG weldments irradiated in HFIR. This report indicated that radiation hardening can be reduced by the optimization of heat treatment condition for F82H. The purposes of this study are to establish the condition of heat treatment for minimum of radiation hardening in F82H steel using Neutron/Ion-irradiation and to examine a correlation between tensile property and micro-hardness before/after irradiation. The materials ...
Stress-rupture strength tests were made of metal steam pipe (12Kh1MF steel) in various conditions, the original, after aging under laboratory conditions (580{degrees}C, 10,000 h), and after long service. It was shown that the more the steel is hardened by heat treatment or cold plastic working in the original condition, the less it hardens in creep. It was established that softening in creep of steel with a moderate yield strength is caused primarily by aging and with a high yield strength by pore formation.
Hardened CMOS/SOI 29101 microprocessor, elementary cells and transistor shave been irradiated at levels between 10 Mrad(SiO_2) and 1 Grad(SiO_2) ("6"0Co and 10 keV x-rays). SIMOX buried oxide behavior in the range of 100 Mrad(SiO_2) and a channel-stopped MOS/SOI structure avoiding lateral leakage current are presented. These two items indicate the feasibility of a CMOS/SOI technology operating in the hundred Mrad(SiO_2) range.
The hardening and embrittlement of reactor pressure vessel (RPV) steels is of great concern in the actual nuclear power plant life assessment. This embrittlement is caused by irradiation-induced damage, like vacancies, interstitials, solutes and their clusters. The current procedure to estimate material properties for the irradiated pressure vessels is based on Charpy-V tests of identical material located at the inner shell of the reactor. But the reason for the embrittlement of the materials is not yet totally known. The real nature of the irradiation damage should thus be examined as well as its evolution in time. Fe-Cu binary alloys are often used to mimic the behaviour of such steels. Their study allows. Identifying some of the defects responsible of the hardening, especially when compared to pure iron or C-micro-alloyed iron. More recently the influence of manganese and nickel in low-Cu RPV steels has become a significant topic. Thus in ...
Biomass and nutrient dynamics of black spruce seedlings during the hardening phase of the greenhouse rotation were examined after four pre-hardening fertilization regimes - conventional, constant-rate loading, exponential loading, and high exponential loading (delivering respectively 15, 40, 40 and 60 mg N seedling{sup -1}) - in order to assess nutrient dilution and steady-state nutrition. Although height growth of seedlings had virtually ceased during hardening, shoot biomass increased 99-142% and root biomass increased five- to tenfold depending on treatment. The biomass increase compromised steady-state nutrient status by diluting internal nutrient pools as nutrient supply was unable to keep up with growth. Soil nutrient levels were rapidly depleted during this period because of plant uptake and lack of fertilizer supplementation. Pre-hardening nutrient loading partly countered and delayed dilution ...
Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.
Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.
The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...
We study an exactly solvable model where an uniformly accelerated detector is linearly coupled to a massless scalar field initially in the Minkowski vacuum. Using the exact correlation functions we show that as soon as the coupling is switched on one can see information flowing from the detector to the field and propagating with the radiation into null infinity. By expressing the reduced density matrix of the detector in terms of the two-point functions, we calculate the purity function in the detector and study the evolution of quantum entanglement between the detector and the field. Only in the ultraweak coupling regime could some degree of recoherence in the detector appear at late times, but never in full restoration, as an earlier work seems to suggest. We explicitly show that under the most general conditions the detector never ...
A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...
This thesis describes the analysis of the semileptonic decay D{sup 0} {yields} {bar K}{sup 0} {pi}{sup -} {mu}{sup +}{nu} using FOCUS data. FOCUS is a fixed target experiment at Fermilab that studies the physics of the charm quark. Particles containing charm are produced by photon-gluon fusion from the collision of a photon beam on a BeO target. The experiment is characterized by excellent vertex resolution and particle identification. The spectrometer consists of three systems for track reconstruction (two silicon systems and one multiwire proportional chamber system) and two magnets of opposite polarity. The polarity of the magnet is such that the events of e{sup +}e{sup -} pairs produced in the target (which constitutes the main background) travel through a central opening in the detectors without interactions. Particle momentum is measured from the deflection angle in the magnets. Three multicell Cerenkov counters are used for charged ...
A segmented focal plane detector for an Enge split-pole spectrograph has been developed for the study of breakup reactions at very low relative energies. It consists of a 61 cm long segmented position-sensitive parallel plate avalanche counter backed by a large Bragg curve detector. A segmented plastic scintillator is mounted behind the anode of the Bragg curve detector and is used for particle identification of low-ionizing particles. The dead space between the two sections of the focal plane detector is 2.5 mm. The intrinsic position resolution of the detector is 1 mm. The intrinsic energy resolution depends on the energy of the incident ion and can be as good as 0.55%. The nuclear charge and mass resolutions are 0.3 e and 0.3 u, respectively. (orig.).
An ultrasensitive laser-induced fluorescence detector was used with capillary electrophoresis for the study of 5-carboxy-tetramethylrhodamine. The raw signal from the detector provided roughly...Full Text Available
A new focal plane detector for an Enge split pole spectrograph has been developed which is able to resolve individual elements and isotopes up to the mass 100 region. It consists of a 60 cm long position sensitive parallel plate avalanche counter backed by a large Bragg curve detector. Compared with other position sensitive focal plane counters the new detector system has a very good time resolution (less than 300 ps) and can be operated at much higher counting rates (up to 25 kHz). The intrinsic resolution of the position detector is less than 1 mm. In addition to the energy and the nuclear charge signal obtained from the Bragg curve detector the angle of incidence into the detector can be measured with an accuracy of better than 1/sup 0/. The detector has already been used in a variety of experiments where good timing, counting rate ...
The most important developments in gaseous detectors at LNL are reviewed. Some aspects of timing, pulse height and position resolutions of avalanche counters are reported. The experimental work on heavy-ion identification by Bragg curve spectroscopy is summarized.
Based on a recently introduced phase X-ray imaging approach, a dual-detector prototype was developed for in-line X-ray phase imaging and phase retrieval utilizing a micro-focus X-ray source and two computed radiography (CR) cassette detectors. The system was built on a horizontal optical rail to facilitate manual adjustment of the positions of the X-ray source, the sample and the detectors. The novel design of the detector-1 is essential, it detects a portion of radiation to form an attenuation image; allows the rest of radiation to reach the detector-2 to form a phase contrast image, and the two images are used to retrieve a phase map. The two detectors are balanced for optimal phase-retrieval with reasonable radiation dose to the object to be imaged. The system was examined in terms of the linearity, the fractions of the X-ray photons detected by the two ...
An analyser for detecting explosives has at least one neutron source and a plurality of gamma ray detectors. An article to be analysed is moved adjacent the source and detectors and is subjected to neutrons which generate gamma rays from any nitrogen in the article. The gamma rays are detected and analysed to determine the nitrogen concentration within the article. In order to achieve an area of uniform detection there are a plurality of detectors equidistant both from the or each source and from the article to be analysed. In order to avoid a decrease in sensitivity away from the source(s) and detectors there may be a second opposing array of source(s) and detectors on the opposite side of the article. For greatest uniformity of detection, a source in one array opposes a detector in the other array and vice versa. Transmission of radiation from the analyser is ...
Detectors for a photon-photon collider are envisaged using as guide-lines the physics goals and the interaction point environment. Production of SUSY Higgs scalar and pseudo-scalar is emphasized. Some aspects of the interaction point environment are discussed. ((orig.)).
We report on a high resolution, monolithic crystal PET detector design concept that provides depth of interaction (DOI) positioning within the crystal. Our design utilizes a novel sensor on...Full Text Available
An experimental investigation of the effect of nickel content on irradiation hardening of reactor pressure vessel steels was conducted. The alloys studied, with nickel contents ranging from 0 to 1.7%, included five sets of steels representing variations in copper contents and other metallurgical variables. Various subsets of the alloys were irradiated at selected combinations of flux, fluence, and irradiation temperature. Irradiation hardening was measured by either changes in the uniaxial yield stress or diamond pyramid hardness. Higher hardening rates with increasing nickel were observed in controlled experiments on commercial-type steels containing high copper concentrations (0.4% Cu). The effect of nickel increased with increasing fluence and decreasing temperature. At high fluence (>10"1"9 n/cm"2) the hardening increased with nickel at an average rate of about 100 MPa/%Ni. There also appeared to ...
The creep crack growth properties of two versions of Alloy 800 have been compared at 500 and 600"0C in the Grade II condition in tests up to 10"4 hours duration. The two alloys were a low carbon alloy containing (wt.%) 0.024 C, 0.5 Ti, 0.3 Al (Alloy B) and a higher carbon alloy containing (wt.%) 0.038 C, 0.2-0.3 Ti, 0.2-3.0 Al (Alloy J). At 600"0C, Alloy B attained maximum age hardening in 10"2 hours, whereas J did not harden significantly in time up to 10"4 hours. Both alloys age hardened at 550"0C with Alloy J hardening more rapidly than B. The creep displacements and displacement rates in small compact tension specimens at 600"0C were smaller than Alloy B than in Alloy J. However, failure times were shorter in Alloy B because of lower displacements for crack initiation and propagation and higher crack growth rates. At 550"0C the displacements for initiation and propagation in Alloy J were smaller ...
The first essential before embarking on the radiation-hardening of electrical insulation - mostly magnet coils - in any beam line application is to obtain a reliable estimate of the dose to the components. These are examples ( switchyards at SLAC and LAMPF) where the degree of hardness specified was much higher than was required. Although experience shows that the cost premium for substantial radiation - hardening is of the order of 10%, it has also become clear that well - designed beam line have negligible losses: hardening is required only in the vicinity of targets, collimators or other beam - intercepting devices. Where the beam is deliberately scraped, local shielding will minimize the associated radiation in the surroundings. Electron machines have their own special problems due to synchrotron radiation, so certainly coils and other electrical equipment should be kept away from the beam bend - plane. Because proton ...
Radiation hardening in austenitic stainless steels is shown to modify deformation characteristics and correlate well with an increased susceptibility to intergranular stress corrosion cracking (IGSCC). Available data on neutron-irradiated materials have been analyzed and correlations developed between fluence, yield strength and cracking susceptibility in high-temperature water environments. Large heat-to-heat differences in the critical fluence (0.2 to 2.5 x10"2"1 n/cm"2) for IGSCC are documented. In many cases, this variability is consistent with yield strength differences among irradiated materials. IGSCC correlates better to yield strength than to fluence for most heats suggesting a possible role of radiation-induced hardening and microstructure on cracking. Microstructural evolution during proton and heavy-ion irradiation has been characterized in low-carbon 304SSs. Hardening results from a dispersion of dislocation ...
This work reports on the use of three state-of-the-art Monte Carlo codes (MCNPX, PENELOPE, FLUKA) in the efficiency calibration of a Broad-Energy Germanium (BEGe) detector. Initial discrepancies found between the experimental and computational efficiency values are related to the poor knowledge of some physical parameters of the detector (dead-layers, crystal dimensions, etc.). As a consequence, a sensitivity analysis was carried out. Each parameter was systematically analyzed, and an accurate model of the detector was determined. The obtained results are consistent, allowing this model to be used in computational efficiency calibrations of the equipment at stake.
A method of detecting explosives in a vehicle includes providing a first rack on one side of the vehicle, the rack including a neutron generator and a plurality of gamma ray detectors; providing a second rack on another side of the vehicle, the second rack including a neutron generator and a plurality of gamma ray detectors; providing a control system, remote from the first and second racks, coupled to the neutron generators and gamma ray detectors; using the control system, causing the neutron generators to generate neutrons; and performing gamma ray spectroscopy on spectra read by the gamma ray detectors to look for a signature indicative of presence of an explosive. Various apparatus and other methods are also provided.
A method of detecting explosives in a vehicle includes providing a first rack on one side of the vehicle, the rack including a neutron generator and a plurality of gamma ray detectors; providing a second rack on another side of the vehicle, the second rack including a neutron generator and a plurality of gamma ray detectors; providing a control system, remote from the first and second racks, coupled to the neutron generators and gamma ray detectors; using the control system, causing the neutron generators to generate neutrons; and performing gamma ray spectroscopy on spectra read by the gamma ray detectors to look for a signature indicative of presence of an explosive. Various apparatus and other methods are also provided.
We report on recent measurements with Thick GEM-like (THGEM)-based imaging detectors. The THGEM is a robust gaseous electron multiplier similar to GEM but with larger dimensions. It has high electron multiplication, of 105 and 107 in single- and double-THGEM structure, respectively, fast signals and ?10MHz/mm2 counting rate capability. It can be produced in any shape and over large area. In view of many possible applications of THGEM-based imaging detectors, in particle physics and beyond, we have recently studied the localization properties of a 2D 10x10cm2 detector. The results of these studies are presented.
A new technique for radon measurement in the natural environment was investigated. It is based on the use of activated charcoal and a track-etch detector. The charcoal acts as a radon collector from the air and the track-etch detector as a recorder of the alpha particles emitted by radon and its decay products. Our preliminary results show that the response of the new dosimeter to radon, using Deodorant activated charcoal (TOK, Yugoslavia) and a CR-39 track-etch detector, is 1.4 tracks cm{sup -2}/Bqm{sup -3}d, which is about eight times higher than that obtained with a standard track-etch dosimeter. (author).
Presented are results of a test of a method for measuring neutron fluences using detectors with fissionable nuclides. The investigations show the soundness of of using neutron-activation detectors of the type Am for mesurements in nuclear installations for values of thermal-neutron fluence of from 10/sup 13/ to 10/sup 20/ neutrons/cm/sup 2/ with exposure for up to several months. The proposed method can be used for prolonged measurements in strong fields of both thermal and fast neutrons.
Superconducting thin film particle detectors can be very attractive due to the low sensitivity to radiation damage. We describe the fabrication procedure and the characterization of Nb/Al bilayers as particle detectors. First steady and dynamical results are reported from tests of 5 MeV alpha-particle detection.
The design of beam position monitor (BPM) stripline detectors has been enhanced by using the finite element code ANSYS[sup TM]. Available from Swanson Engineering, ANSYS[sup TM] was developed to solve Poisson's equation in stress and thermal analysis applications. The code is readily adaptable to solving electrostatic problems. The designs of several beam detectors were iterated by calculating electrode capacitances and characteristic impedances to better than 1% accuracy.
The upgraded CDF II detector has collected first data during the initial operation of the Tevatron accelerator in Run II. The simulation of the CDF electromagnetic and hadronic central and upgraded plug (forward) calorimeter is based on the Gflash calorimeter parameterization package used within the GEANT based detector simulation of the Run II CDF detector. We present the results of tuning the central and plug calorimeter response to test beam data.
The neutron detector is cased in a metal envelop and has one detector with a very sensitive fission chamber and a second detector with a fission chamber less sensitive that the first one and a boron coated ionisation chamber for reducing gamma radiation detection.
A study on the aging process of gas detectors was presented. How the development of more performing but delicate detectors, the use of faster but aggressive gases, and the need to cover large areas, led to unexpected problems was discussed. Various methods for curing aged detectors were also highlighted. (Edited abstract) 37 Refs.
Ionization counters employing Bragg curve spectroscopy have been constructed for use in a 4? geometry. These detectors compare very favorably in terms of both energy and charge resolution with small solid angle devices. These detectors have a large dynamic range because they are backed by scintillation detectors, and are thus capable of detecting and identifying particles with energies from 1 MeV/nucleon up to 200 MeV/nucleon.
Ionization counters employing Bragg curve spectroscopy have been constructed for use in a 4{pi} geometry. These detectors compare very favorably in terms of both energy and charge resolution with small solid angle devices. These detectors have a large dynamic range because they are backed by scintillation detectors, and are thus capable of detecting and identifying particles with energies from 1 MeV/nucleon up to 200 MeV/nucleon. (orig.).
Ionization counters employing Bragg curve spectroscopy have been constructed for use in a 4#pi# geometry. These detectors compare very favorably in terms of both energy and charge resolution with small solid angle devices. These detectors have a large dynamic range because they are backed by scintillation detectors, and are thus capable of detecting and identifying particles with energies from 1 MeV/nucleon up to 200 MeV/nucleon. (orig.).
Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...
We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...
Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...
Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...
Waveform correlation detectors compare a signal template with successive windows of a continuous data stream and report a detection when the correlation coefficient, or some comparable detection statistic, exceeds a specified threshold. Since correlation detectors exploit the fine structure of the full waveform, they are exquisitely sensitive when compared to power (STA/LTA) detectors. The drawback of correlation detectors is that they require complete knowledge of the signal to be detected, which limits such methods to instances of seismicity in which a very similar signal has already been observed by every station used. Such instances include earthquake swarms, aftershock sequences, repeating industrial seismicity, and many other forms of controlled explosions. The reduction in the detection threshold is even greater when the techniques are applied to arrays since stacking can be performed on the ...
Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga"+ ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.
The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.
In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.
Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.
Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.
The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society
Al2O3-based ceramic is one of the most widely used materials for tools employed in hardened steel turning applications due to its high hardness, wear resistance, heat resistance and chemical stability. The objective of this work is to predict the lives of Al2O3-(W, Ti)C ceramic tools in intermittent turning of hardened AISI 1045 steel by means of damage evolution model taking into account the mechanical loading and thermal effect in the cutting process. A damage evolution model analyzing the RVE with uniformly distributed interacting cracks is constructed based on micromechanics. The calculated results of the proposed damage evolution model are compared with the lives of two kinds of Al2O3-(W, Ti)C ceramic tools obtained through experiments. It is found that the proposed model can be used to predict the lives of the ceramic cutting tools in intermittent turning operation.
Experimental observations related to the initiation of plastic deformation in metals and alloys irradiated with fission neutrons have been analyzed. The experimental results, showing irradiation-induced increase in the upper yield stress followed by a yield drop and plastic instability, cannot be explained in terms of conventional dispersed-barrier hardening because (a) the grown-in dislocations are not free, and (b) irradiation-induced defect clusters are not rigid indestructible Orowan obstacles. A new model called 'cascade-induced source hardening' is presented where glissile loops produced directly in cascades are envisaged to decorate the grown-in dislocations so that they cannot act as dislocation sources. The upper yield stress is related to the breakaway stress which is necessary to pull the dislocation away from the clusters/loops decorating it. The magnitude of the breakaway stress has been estimated and is found to be in good ...
Hard surface finishing represents the final manufacturing step for functional areas of machine elements in state-of-the-art production. Raceways of rolling bearing rings are ground and honed to the required low roughness. Plastic deformation is restricted to a narrow edge zone of the hardened steel. Reheating of the machined components below the martensite tempering or bainite transformation temperature results in a marked decrease of the XRD line width on the surface. The investigated samples are made of through-hardened standard bearing steel 100Cr6 (international denotation: SAE 52100). On the basis of a material model that explains the effect as a complex diffusion process of dislocational carbon segregation, i.e. static strain aging, the measured kinetics of the XRD line width reduction is simulated by an Arrhenius-type equation, which describes the rate-controlling reaction step of temper carbide dissolution. The formation of a small ...
Type 316 stainless steel is the primary candidate austenitic structural material for fusion first wall constructions. Here, type 316L(N) stainless steel plate material has been irradiated up to 10 dpa at temperatures of 80, 225, 325, and 425 C in the High Flux Reactor (HFR) of Petten. Tensile tests have been performed in the temperature range from RT to 575 C at a conventional strain rate of 5 x 10"-"4 s"-"1. The results of the tensile tests are analyzed in terms of irradiation hardening and loss of ductility due to irradiation. Tensile properties saturate in the early stage (within 0.65 dpa) at the lowest applied irradiation temperature. It is indicated that the most severe degradation of tensile ductility occurs in the temperature range of 275 to 350 C. Comparison with literature data revealed a large scatter in irradiation hardening at irradiation temperatures above 325 C.
Ten different alloys of zirconium have been tested with regard to the effect of irradiation on their mechanical properties and their sensitivity to environmentally induced failure. Two different environments were used: iodine vapour and liquid cesium with an addition of 2% cadmium. The neutron dose was 10"2"1n/cm"2 (E>1MeV) and the irradiation temperature was about 300 degrees C. All alloy additions increased the irradiation hardening. Especially notable was the large effect of titanium and tin on irradiation hardening. A limited amount of transmission electron microscopy was carried out in order to find an explanation to the effects. The testing in different environments showed that there is no clear correlation between environmental sensitivity and yield stress. For materials of similar yield stress an alloyed material tends to be more sensitive to environmental cracking than a material which only contains oxygen as an impurity. There also ...
Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785degC up to a fluence of 5.2 x 10"2"4 n/m"2. The hardness was increased by up to 51% in AlN and 84% in SiC. The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200 #approx# 1,400degC annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400degC annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops is not grounds for ...
Tensile properties of reduced-activation 10Cr-30Mn austenitic steels with carbon levels from 0.003 to 0.55% were investigated over the temperature range from room temperature to 873 K after neutron irradiation in the Japan Materials Testing Reactor at 573 K to 8.5x10"2"2 n/m"2. Irradiation-induced increase in yield stress increased significantly with carbon concentration up to about 0.1% and it was constant above 0.1% carbon. A high density of dislocation loops with small (below 10 nm) and large (20-30 nm) sizes formed during irradiation. The high density, small loops caused a large irradiation hardening, while the large loops contributed only slightly to irradiation hardening. It was considered that carbon atoms formed the small loops together with irradiation defects. The deformation channeling was observed in the irradiated high carbon steels, 0.11 and 0.55% carbon, but not in the very low carbon steel, 0.003% carbon, after deformation near ...
Alloy 800 from three different commercial heats have been continuously cycled and cycled with a hold period at 922/sup 0/K. The starting microstructures of these heats reflects an inherently wide spectrum of possibilities for Alloy 800. The amounts and morphologies of the TiC and M/sub 23/C/sub 6/ carbides are different among the heats. During cycling, M/sub 23/C/sub 6/ forms intragranularly in a solution annealed heat. This precipitation contributes to the cyclic hardening. Both mill annealed heats of Alloy 800 are stable to carbide precipitation during cycling. The heat with the lower carbon content formed ..gamma..' during cycling but the volume fraction was too low to contribute to hardening. The inclusion of hold periods caused the dislocation substructure to become more diffuse in the mill annealed heats. The cyclic hardening was enhanced with the inclusion of the hold periods but this was not due to any ...
The massive stars in the Galactic center inner arcsecond share analogous properties with the so-called Hot Jupiters. Most of these young stars have highly eccentric orbits, and were probably not formed in-situ. It has been proposed that these stars acquired their current orbits from the tidal disruption of compact massive binaries scattered toward the proximity of the central supermassive black hole. Assuming a binary star formed in a thin gaseous disk beyond 0.1 pc from the central object, we investigate the relevance of disk-satellite interactions to harden the binding energy of the binary, and to drive its inward migration. A massive, equal-mass binary star is found to become more tightly wound as it migrates inwards toward the central black hole. The migration timescale is very similar to that of a single-star satellite of the same mass. The binary's hardening is caused by the formation of spiral tails lagging the stars inside the binary's ...
This paper provides a physically-based engineering model to estimate radiation hardening of 9%Cr-steels under both displacement damage (dpa) and helium. The model is essentially based on the dispersed barrier hardening theory and the dynamic re-solution of helium under displacement cascades but incorporating a number of assumptions and simplifications [Trinkaus, J. Nucl. Mater. 318 (2003) 234-340]. As a result, the kinetics of the damage accumulation kept fixed, its amplitude is fitted on one experimental condition. The model was rationalized on an experimental database that mainly consists of ?9%Cr-steels irradiated in the range of 50-600 deg. C up to 50 dpa and with a He-content up to 5000 appm. The test temperature effect is taken into account through a normalization procedure based on the change of the Young's modulus and the anelastic deformation that occurs at high temperature. Despite the large experimental scatter, inherent to the ...
Silica microspheres were deposited into two-dimensional periodic arrays and coated with a thin layer of silicon nanocrystals. The luminescence from the silicon nanocrystals coupled into the whispering gallery modes of the spheres, with Q factors that depended on a range of parameters including sphere size, position on the sphere, viewing direction, and thickness of the nanocrystal coating. Scattering from the film-sphere and/or the sphere-substrate contacts resulted in a lower Q for modes that intersect these regions. The highest Q factors obtained in this work were {approx}1500. The results suggest that silica microspheres may be promising candidates for high-Q cavities that incorporate silicon nanocrystals for cavity QED or nonlinear optical effects.
A series of cleavable water-soluble silicone surfactants were prepared by the reaction of a hydroxyl-terminated polyester and an organopolysiloxane. Cleavable surfactants can decompose into water-insoluble moiety of silanol and two water-soluble products under acidic conditions, whereas these compounds are stable under neutral or alkaline conditions. The structure change of theses cleavage products are confirmed by IR and UV spectra analysis. The fundamental surface activity including surface tension, foaming, contact angle and viscosity are studied. The photocatalytic degradation of modified silicone surfactants with UV light over titanium oxide was investigated. Experimental results have confirmed that products are slowly degraded by direct photolysis. However, the cleavable silicone sur...
... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...
Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).
This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).
In support of the efforts to apply ceramics to advanced heat engines, a study is being performed of the performance of ceramics at the ring/cylinder interface of advanced (low heat rejection) engines. The objective of the study, managed by the Oak Ridge National Laboratory, is to understand the basic mechanisms controlling the wear of ceramics and thereby identify means for applying ceramics effectively. Attempts to operate three different zirconias, silicon carbide, silicon nitride, and plasma-sprayed ceramic coatings without lubrication have not been successful because of excessive friction and high wear rates. Silicon carbide and silicon nitride perform well at ambient temperatures with fully formulated mineral oil lubrication, but are limited to temperatures of 500F because of the lack of suitable liquid lubricants for higher temperatures.
In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...
Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)
We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...
In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.
#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).
We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.
The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).
A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...
Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures
We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.
We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.
Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).
into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...
Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...
An imaging position sensitive detector for charged particles, neutrons, X-and gamma rays has been developed. The novel feature of this scintillation imaging radiation detector is its ability to detect individual nuclear particle scintillations with a h igh degree of spatial resolution. The key elements of this detector system are a high gain, low noise image intensifier tube, a CCD camera and commercially available image processing hardware and software. This detector system is highly effective for applications such as low fluence and real time neutron radiography, mapping of radioactive contamination in nuclear reactor fuel rods, X-ray diffraction imaging, high speed autoradiography and in general position sensitive detection of nuclear radiation. Results of some of the exploratory experiments carried out using this detector system are presented in this paper. (orig.).
TAPP-3 and 4 reactors use large number of Self Powered Neutron Detectors (SPNDs) for Neutronic lower measurement and control. To perform in-situ calibration of these detectors in select locations and to validate the reactor physics codes which predict flux at various points in the core, traveling in-core probes (TIP) are required. The TIP assembly consists of a miniature neutron sensitive detector. The detector is driven in and out of core using a mechanism which facilitates positioning of the detector anywhere inside a vertical tube (Central carrier tube of any of the six select Vertical Flux Units) in the core. TIP is driven through retractable feed mechanism for a stroke of 13 m. This paper describes the developmental efforts and the operational feedback of the retractable feed mechanism for the stroke of 13 m used at TAPP 3 and 4 reactor. (author)
Solid state nuclear track detectors (SSNTD) are widely used for radon measurements and CR-39 is one of the most popular SSNTD. In this work it was determined the calibration factor for radon concentration measurements through the passive method with CR-39 detectors. The detectors were put in a proper device (an adapted Lucas cell) and exposed to the standard radon concentration through the Pylon Model RN-150 flow through radon gas source. After exposure, the detectors were etched for 5.5 hours in a KOH solution at 80 deg C in a bath at a constant temperature. The track density was read in an Axiolab-Zeiss optical microscope, with nominal magnification of X10 connected to a video camera and to a personal computer. The calibration factor was obtained through the relation between standard radon concentration, track density and exposure time. (author)
Solid state nuclear track detectors (SSNTD) are widely used for radon measurements and CR-39 is one of the most popular SSNTD. In this work it was determined the calibration factor for radon concentration measurements through the passive method with CR-39 detectors. The detectors were put in a proper device (an adapted Lucas cell) and exposed to the standard radon concentration through the Pylon Model RN-150 flow through radon gas source. After exposure, the detectors were etched for 5.5 hours in a KOH solution at 80 deg C in a bath at a constant temperature. The track density was read in an Axiolab-Zeiss optical microscope, with nominal magnification of X10 connected to a video camera and to a personal computer. The calibration factor was obtained through the relation between standard radon concentration, track density and exposure time. (author)
Summary Solid state nuclear track detectors are used to determine the concentration of a particles in the environment. The standard method for assessing exposed detectors involves 2D image analysis. However 3D imaging has the potential to provide additional information relating to angle as well as to differentiate clustered hit sequences and possibly energy of a particles but this could be time consuming. Here we describe a new method for rapid high-resolution 3D imaging of solid state nuclear track detectors. A `LEXT' OLS3100 confocal laser scanning microscope (Olympus Corporation, Tokyo, Japan) was used in confocal mode to successfully obtain 3D image data on four CR-39 plastic detectors. Three-dimensional visualization and image analysis enabled characterization of track features. This ...
A large area Bragg curve spectroscopy (BCS) detector and a position sensitive parallel grid avalanche counter have been developed to study heavy ion reactions, such as inelastic excitations and few nucleon transfer reactions near the Coulomb barrier. Reasonably good resolutions have been achieved for energy, atomic number and angle. A theoretical investigation on the mass dependence of the Bragg peak signal from the BCS detector, shows that there is a negligible mass dependence related to the geometry of the detector. The mass number of the heavy ions which cannot be obtained by the above method, has been identified by detecting the corresponding characteristic gamma rays from the product nuclei with two large solid angle gamma ray detectors. (orig.)
A large area Bragg curve spectroscopy (BCS) detector and a position sensitive parallel grid avalanche counter have been developed to study heavy ion reactions, such as inelastic excitations and few nucleon transfer reactions near the Coulomb barrier. Reasonably good resolutions have been achieved for energy, atomic number and angle. A theoretical investigation on the mass dependence of the Bragg peak signal from the BCS detector, shows that there is a negligible mass dependence related to the geometry of the detector. The mass number of the heavy ions which cannot be obtained by the above method, has been identified by detecting the corresponding characteristic gamma rays from the product nuclei with two large solid angle gamma ray detectors. (orig.).
A large acceptance, high stopping power, Bragg curve spectrometer has been developed for use in coincidence experiments with heavy ions. The electron collection fields are radial and position information is obtained from a resistive anode. The detector is 60 cm deep and operates at pressures of up to 2.5 atm of P-10 gas. It is mated to a scattering chamber which allows it to be moved out of plane during coincidence measurements. The detector design was aided by the results of computer simulations of the electron collection process in the detector, and of the signal processing in the electronics. The signals from the Bragg curve spectrometer are recorded in a waveform digitizer and the Bragg peak height, range, position and pileup rejection information are determined from software analysis of the recorded signals. Factors limiting the performance of the detector are discussed, and results obtained with ...
A large acceptance, high stopping power, Bragg curve spectrometer has been developed for use in coincidence experiments with heavy ions. The electron collection fields are radial and position information is obtained from a resistive anode. The detector is 60 cm deep and operates at pressures of up to 2.5 atm of P-10 gas. It is mated to a scattering chamber which allows it to be moved out of plane during coincidence measurements. The detector design was aided by the results of computer simulations of the electron collection process in the detector, and of the signal processing in the electronics. The signals from the Bragg curve spectrometer are recorded in a waveform digitizer and the Bragg peak height, range, position and pileup rejection information are determined from software analysis of the recorded signals. Factors limiting the performance of the detector are discussed, and results obtained with ...
Abstract - We have designed, built, and tested a 2-D pixellated thermal neutron detector. The detector is modeled after the MicroMegas-type structure previously published for collider-type experiments. The detector consists of a 4X4 square array of 1 cm 2 pixels each of which is connected to an individual preamplifier-shaper-data acquisition system. The neutron converter is a 10B film on an aluminum substrate. We describe the construction of the detector and the test results utilizing 252Cf sources in Lucite to thermalize the neutrons.Drift electrode (Aluminum) Converter (10B) 3 mm Conversion gap neutron (-900 V)
Tungsten (W) coating on fusion candidate V-4Cr-4Ti (NIFS-HEAT-2) substrate was demonstrated with plasma spray process for the purpose of applying to protection of the plasma facing surface of a fusion blanket. Increase in plasma input power and temperature of the substrate was effective to reduce porosity of the coating, but resulted in hardening of the substrate and degradation of impact property at 77 K. The hardening seemed to be due to contamination with gaseous impurities and deformation by thermal stress during the coating process. Since all the samples showed good ductility at room temperature, further heating seems to be acceptable for the vanadium substrate. The fracture stress of the W coating was estimated from bending tests as at least 313 MPa, which well exceeds the design stress for the vanadium structure in fusion blanket. (author)
Magnesium alloys have been increasingly used in automotive and electronic industries because of their excellent strength to weight ratio and EMI shielding properties. However, magnesium alloys have low formability at room temperature due to their unique mechanical behavior (twinning and untwining), prompting for forming at an elevated temperature. In this study, a temperature dependent constitutive model for magnesium alloy (AZ31B) sheet is developed. A hardening law based on non linear kinematic hardening model is used to consider Bauschinger effect properly. Material parameters are determined from a series of uni-axial cyclic experiments (T-C-T or C-T-C) with the temperature ranging 150-250 deg. C. The influence of temperature on the constitutive equation is introduced by the material parameters assumed to be functions of temperature. Fitting process of the assumed model to measured data is presented and the results are compared.
By means of the light microscopy and by the measurement of the mechanical properties one investigated into the phase composition and the properties of Al-Mg-Ce and Al-Mg-Y system alloys. One plotted the isothermal cross sections of the mentioned systems under 430 and 275 deg C temperatures at up to 16% magnesium concentration and up to 0.7% yttrium concentration. One determined the yield limit and strength, the relative elongation of Al-Mg base hardened and deformed alloys containing 7.0-9.9% Mg and Ce, Y, Mn, Zr dopes upon ageing under 175, 200, 250 and 300 deg C temperatures within the ageing time ensuring the hardening maximum effect
A separation phenomenon occurring during the Charpy impact test of API X80 pipeline steels was investigated in the present study. A detailed microstructural analysis of fractured impact specimens showed that the band structure of bainite elongated along the rolling direction worked as prior initiation sites for separations, and that the number and length of the separations increased with the increasing volume fraction of bainite. In the steels having high work hardenability, tearing-shaped separations were found because the hammer-impacted region was seriously hardened during the impact test, which led to the reduction in the impact toughness. As the test temperature decreased, the tendency toward separations increased, but separations were not found when the cleavage fracture prevailed at very low temperatures. These findings suggested that the formation of bainite and secondary phases should be minimized for preventing or minimizing ...
Smooth and notched fatigue behavior is presented for an age-hardenable metastable #beta#-titanium alloy (Ti-3Al-8V-6Cr-4Mo-4Zr). The as-solution heat treated condition exhibits low fatigue limits and high ductility, while the high-strength condition has higher fatigue limits, but poor ductility. A new thermomechanical technique employs shot peening and heat treating to selectively age-harden only the surface. The fatigue limit is improved to levels well above that of the high strength condition, while retaining appreciable ductility, since the bulk material remains in the solution heat treated condition. (orig./MM).
Microprocessor based ''smart'' pressure, level, and flow transmitters were tested to determine the radiation hardness of this class of electronic instrumentation for use in reactor building applications. Commercial grade Complementary Metal Oxide Semiconductor (CMOS) integrated circuits used in these transmitters were found to fail at total gamma dose levels between 2500 and 10,000 rad. This results in an unacceptably short lifetime in many reactor building radiation environments. Radiation hardened integrated circuits can, in general, provide satisfactory service life for normal reactor operations when not restricted to the extremely low power budget imposed by standard 4--20 mA two-wire instrument loops. The design of these circuits will require attention to vendor radiation hardness specifications, dose rates, process control with respect to radiation hardness factors, and non-volatile programmable memory technology. 3 refs., 2 figs.
Modern commercial alloys are not suited for future steam turbines of operating temperatures beyond 700 C. #gamma#'-hardened alloys like Waspaloy have good mechanical characteristics but have defects when large batches are melted. #gamma#'/#gamma#''-hardened alloys like Inconel 706, on the other hand, are easy to produce but have insufficient microstructural long-term stability and insufficient creep strength. Mixed crystal solidified alloys like Inconel 617 have excessive yield stress at forging temperatures. Two new alloys were therefore developed. Results so far show that they have good production characteristics but insufficient mechanical characteristics. The reasons for this are currently under investigation. (orig.)
Modifications of the structure and mechanical properties in LiF crystals irradiated with MeV-energy Au ions have been studied using nanoindentation, atomic force microscopy and optical spectroscopy. The nanostructuring of crystals under a high-fluence irradiation (above 1013 ions/cm2)?was?observed. Nanoindentation tests show a strong ion-induced increase of hardness (up?to 150?200%), which is related to the high volume concentration of complex color centers, defect aggregates, dislocation loops and grain boundaries acting as strong barriers for dislocations. From the?depth profiling of the hardness and energy loss it follows that both nuclear and electronic stopping mechanisms of MeV Au ions contribute to the creation of damage and hardening. Whereas the electronic stopping is dominating i...
The introduction of tolerance to radiation (''radiation-hardness'') into large electronic systems is one of the major tasks to which this Handbook will be put. The practices recommended here for inculcating radiation-tolerance in equipment require advanced physical modeling techniques, precise engineering procedures, and firm assurance procedures. The degree to which these procedures should be used in an equipment project can be measured by the severity of the raw radiation environment, the desired reliability of the system, and the requirement of that project for radiation-sensitive technologies. The balance of device/circuit design versus shielding will depend on whether the radiation is highly penetrating -- as in isotope handling or military environments -- or readily attenuated, as in space. In this chapter the authors have attempted to summarize the essential features of the radiation hardening of large assemblies of equipment and how effective control of ...
The determination of residual stress (RS) in case-hardened steel gear truck synchronisers coated with thermal sprayed molybdenum was carried out using neutron and synchrotron X-ray diffraction. Two samples with different coating thicknesses (about 120 ?m and 1.4 mm) and different steel substrates (16MnCr5 and SAE4140, respectively) were investigated. Microanalysis revealed substantial porosity in both samples and some debonding was observed between the thin coating and the substrate. The bulk hardness of the SAE 4140 proved to be much higher than the 16MnCr5 and the surface case-hardening increased it by a further 20%. The full three-dimensional stress depth-profile was determined by neutron diffraction (ND) in both the coatings and the substrates, while synchrotron radiation allowed a dep...
This report compares the performance characteristics of /sup 10/B-lined and fission-neutron detectors in gamma-ray fluxes typical of the fields to be encountered during nondestructive testing of irradiated light-water fuel assemblies stored in water. Using the optimum time constants for each of the /sup 10/B-lined detectors, the 0.25-in.-dia detector had a 5% loss in neutron count sensitivity at 7000 rad/h. Similarly, the 0.5-in.-dia detector had a 7% loss at 13,000 rad/h and the 1-in.-dia detector had a 5% loss in sensitivity at 1000 rad/h. Uranium-235 fission chambers were operated successfully in fields above 100,000 rad/h with no loss in neutron counting sensitivity. Shielding calculations were done to determine the appropriate shield thickness needed for a /sup 10/B-lined neutron detector to operate in a 50,000 rad/h field, typical of light-water-reactor ...
Large area, single-element Si(Li) detectors have been fabricated using a novel geometry which yields detectors with reduced capacitance and hence reduced noise at short amplifier pulse-processing times. A typical device employing the new geometry with a thickness of 6 mm and an active area of 175 mm 2 has a capacitance of only 0.5 pf, compared to 2.9 pf for a conventional planar device with equivalent dimensions. These new low capacitance detectors, used in conjunction with low capacitance field effect transistors, will result in x-ray spectrometers capable of operating at very high count rates while still maintaining excellent energy resolution. The spectral response of the low capacitance detectors to a wide range of x-ray energies at 80 K is comparable to typical state-of-the-art conventional Si(Li) devices. In addition to their low capacitance, the new devices offer other advantages over ...
This dissertation describes the evaluation of many-pixel Cadmium-Zinc-Telluride (CdZnTe) hard-X-ray detectors for future use with the High Energy Replicated Optics (HERO) telescope being developed at Marshall Space Flight Center. The detector requirements for the HERO application are good energy resolution (sufficient to resolve cyclotron features and nuclear lines), spatial resolution of ∼200 μm, minimal charge loss of absorbed X rays, and minimal sensitivity to the background environment. This research concentrates on assessing the suitability of these detectors for the focus of HERO, and includes the development of a simulation of the physics involved in an X-ray-detector interaction, a study of the intrinsic material properties, measurements with prototype detectors such as the energy and spatial resolution, charge loss, and X-ray background reduction through ...
Theoretical x-ray transition energies, lifetimes and partial multiplet fluorescence yields are presented for all spectroscopic terms of electron configurations with a single K-shell vacancy and varying number of electrons in the L-shell and M/sub 1/-subshell for multiply-ionized silicon. 9 tables.
We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.
The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed
The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.
Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.
Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).
The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.
The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.
Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.
Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.
The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'
In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be ...
Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no ...
A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the ...
Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...
Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important ...
Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma zone for particle ...
This patent describes a preflush fluid for preventing lost circulation during the cementing of a well, the fluid consisting essentially of: (a) water; (b) about 10 to about 30 percent by weight of water (% BWOW) cement; (c) about 5 to about 30% BWOW calcium sulfate selected from the group consisting of calcium sulfate hemihydrate, calcium sulfate dihydrate, and mixtures thereof; and (d) an alkali metal-containing quick-hardening accelerator.
The strain gradient crystal plasticity theory is applied to study the deformation of planar single crystal with a void under a nominally uniaxial tension. The crystal theory assumes elevated strain hardening due to slip gradients and has a constitutive length scale. The effects of the void size with respect to the constitutive length scale on the single crystal deformation are investigated.
Plasma nitriding is usually used for ferrous materials to improve their surface properties. Knowledge of the properties of thin surface layers is essential for designing engineering components with optimal wear performance. In our study, we investigated the microstructural, mechanical and tribological properties of plasma- and pulse plasma-nitrided AISI 4140 steel in comparison to hardened steel. The influence of nitriding case depth as well as the presence of a compound layer on its tribological behaviour was also examined. Plasma and pulse plasma nitriding were carried out using commercial nitriding processes. Nitrided samples were fully characterised, using metallographic, SEM microscopic, microhardness and profilometric techniques, before and after wear testing. Wear tests were performed on a pin-on-disc wear testing machine in which nitrided pins were mated to hardened ball bearing steel discs. The wear tests were carried out under dry ...
Stress relaxation was studied at 408 K on AZ31 reinforced by ceramic foam produced by in situ foaming of filler loaded preceramic polymer melt. Reinforcement causes significant enhancement of the resistance against stress relaxation compared to AZ91. It is correlated with hardening by the ceramic skeleton as well as ceramic particles formed in the AZ31-matrix. (orig.)
In this study, deformation modes and precipitations have been characterized in test pieces made of alloy 800, grade 2 hyper-hardened state and age-conditioned for 3000 h at 550/sup 0/C, used for steam generator tubes of the Super Phenix Reactor, after continuous fatigue and fatigue-relaxation tests in the oligocyclic range. This microstructural study has provided an interpretation of the fatigue behaviour of the material.
The influence of additionally injected short-wavelength photobleaching light on the radiation hardness of Ge-doped graded index fibers working at 1,300 nm wavelength is investigated. Predictions are complicated by the fact that more efficient shortwave bleaching light experiences higher radiation-induced loss. Promising results are found for low fiber temperatures (approx-lt -50 C) and bleaching light of about 835 nm wavelength.
The structure and properties of composite powder coatings on the base of titanium carbide are studied. It is shown the electron-beam welding deposition of powders on the base of nickel and titanium carbide allows to produce of high-quality wear-resistant coatings which superior in density and hardness compared with sputtered ones. Changes of hardening phase volume percentage as well as composition of metal matrix make possible to control coatings hardness
The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected, data are in good agreement with a recently developed model of oxygen out-diffusion; (ii) the location across the wafer with a radial dependence, results could be related to stress induced by thermal gradient.
A number of alloys of zirconium have been investigated as part of a program aimed at improving the high-temperature tensile and creep strength of zirconium. These alloys include aluminum, beryllium, lead, magnesium, molybdenum, niobium, tantalum, tin, titanium, tungsten, vanadium, and zinc, binary and ternary alloys. The data indicate that aluminum, lead, molybdenum niobium, tin, titanium, tungsten, and vanadium can be used successfully to harden zirconium, and that aluminum, tin, titanium, and vanadium are particularly effective in maintaining the strength of zirconium at elevated temperatures.
Carbide reactions occurring in a precipitation-hardening gamma/gamma-prime Ni-Cr alloy during prolonged high-temperature aging are investigated experimentally. It is found that the decomposition of primary MC carbides, which is accompanied by the precipitation of M23C6 particles, may lead to void nucleation and growth. The effect of carbide transformations on the residual properties of the material at temperatures above the equicohesion temperature is observed at the late stages of aging only. 6 references.
This paper describes the anelastic strain recovery and the strain hardening of amorphous metals and presents the experimental result that creep deformation is represented by a viscoelastic model consisting of rheological elements. Materials studied were 80Pd--20Si, 80Fe--13P--7C, and 60 Cu--40 Zr. (DLC)
An instrument has been constructed for the measurement of residual stress in steel. If necessary, large objects can be examined in situ. An account is given of the principles and construction. A special stressing frame provides for calibration. An application to residual stress in gear blanks has established a systematic variation of surface stress with nickel content and confirmed the overall effect of the surface hardening treatment.
Simulation irradiation experiments were carried out to investigate the formation processes and contribution to hardening of radiation-induced features in low alloy steels. Medium Cu (0.12 and 0.16%) and low Cu (0.03%) A533B steels were irradiated with 3 MeV Ni ions and 5 MeV electrons, and in KUR at 290degC. Irradiated steels were examined by three-dimensional atom probe, positron annihilation, high-resolution transmission electron microscopy and hardness measurements. Electron irradiation caused almost the same hardening as KUR irradiation in medium Cu steels under almost the same dose rate and dose conditions, whereas the formation of larger, denser and more Cu enriched clusters and smaller accumulation of single vacancies were confirmed for KUR irradiation. This indicated that cascade damage provides additional cluster nucleation sites to compensate for lower free point defect production. High dose rate Ni ion irradiation produced Mn-Ni-Si ...
The detector for retrospective radon exposure measurements is developed. The detector consists of the multilayer package of solid-state nuclear track detectors LR-115 type. Nitrocellulose films works both as {alpha}-particle detector and as absorber decreasing the energy of {alpha}-particles. The uncertainties of implanted {sup 210}Pb measurements by two- and three-layer detectors are assessed in dependence on surface {sup 210}Po activity and gross background activity of the glass. The generalized compartment behavior model of radon decay products in the room atmosphere was developed and verified. It is shown that the most influencing parameters on the value of conversion coefficient from {sup 210}Po surface activity to average radon concentration are aerosol particles concentration, deposition velocity of unattached {sup 218}Po and air exchange rate. It is demonstrated that with ...
High pressure xenon ionization chamber detectors are possible alternatives to traditional thallium doped sodium iodide (NaI(Tl)) and hyperpure germanium as gamma spectrometers in certain applications. Xenon detectors incorporating a Frisch grid exhibit energy resolutions comparable to cadmium/zinc/telluride (CZT) (e.g. 2% (at) 662keV) but with far greater sensitive volumes. The Frisch grid reduces the position dependence of the anode pulse risetimes, but it also increases the detector vibration sensitivity, anode capacitance, voltage requirements and mechanical complexity. We have been investigating the possibility of eliminating the grid electrode in high-pressure xenon detectors and preserving the high energy resolution using electronic risetime compensation methods. A two-electrode cylindrical high pressure xenon gamma detector coupled to time-to-amplitude conversion electronics ...
The {sup 252}Cf-source-driven noise analysis method is a versatile measurements tool that has been applied to measurements for initial loading of reactors, quality assurance of reactor fuel elements, fuel processing facilities, fuel reprocessing facilities, fuel storage facilities, zero-power testing of reactors, verification of calculational methods, process monitoring, characterization of storage vaults, and nuclear weapons identification. This method`s broad range of application is due to the wide variety of time- and frequency domain signatures, each with unique properties, obtained from the measurement. The following parameters are obtained from this measurement: average detector count rates, detector multiplicities, detector autocorrelations, cross-correlation between detectors, detector autopower spectral densities, cross-power spectral densities between ...
APEX (ATLAS Positron EXperiment), a collaborative effort of ANL, FSU, MSU/NSCL, Princeton, Queen`s, Rochester, Washington and Yale, is an experiment to study positron and electron production in very heavy ion collisions. The electrons and positrons are detected with two detector arrays, each consisting of 216 1 mm thick Si PIN diodes, and their energy and time-of-flight are measured. The number of detectors and limited space made it necessary to develop a system that could efficiently process and transfer signals from the detectors to the charge sensing ADC`s and data readout electronics as well as monitor the condition of the detectors. The discussion will cover the electronics designed for the Si detectors, including the charge amplifier, ``Mother board`` for the charge amplifiers, 8 channel Shaper, 16 channel Constant Fraction Discriminator (CFD), 16 channel Peak-to-FERA (PTF) ...
This thesis reports on the fabrication and test of a new gaseous detector with a very large number of readout channels. This detector is intended for measuring the tracks of charged particles with an unprecedented sensitivity to single electrons of almost 100 %. It combines a metal grid for signal amplification called the Micromegas with a pixel readout chip as signal collecting anode and is dubbed GridPix. GridPix is a potential candidate for a sub-detector at a future electron linear collider (ILC) foreseen to work in parallel with the LHC around 2020--2030. The tracking capability of GridPix is best exploited if the Micromegas is integrated on the pixel chip. This integrated grid is called InGrid and is precisely fabricated by wafer post-processing. The various steps of the fabrication process and the measurements of its gain, energy resolution and ion back-flow property are reported in this document. Studies of the ...
The Daya Bay reactor neutrino experiment is located at the Daya Bay nuclear power plant in Shenzhen, China. The experiment deploys eight 'identical' antineutrino detectors to measure antineutrino fluxes from six 2.9 GWth reactor cores in three underground experimental halls at different distances. The target zone of the Daya Bay detector is filled with 20 t 0.1% Gd doped LAB liquid scintillator. The baseline uncorrelated detector uncertainty is ?0.38% using current experimental techniques. Daya Bay can reach a sensitivity of sin22?13<0.01 with baseline uncertainties after 3 years of data taking.
The cross-coupled interferometer is a new design for interferometric gravitational wave detectors. Similar to the baseline gravitational wave detectors proposed for Advanced LIGO, it uses long-arm cavities in which the signal is generated. The signal fields are then extracted from the arm cavities with an additional cavity behind the long-arm cavities. The tuning of this signal extraction cavity and the parallel tuning of the signal recycling mirror can be used to optimize the peak frequency and the bandwidth of the detector independently. If we replace the signal recycling mirror by a small cavity, it is possible to amplify signals in two different frequency bands.
We studied the niobium re-entrant cavity utilized by the Australian group in the Niobe gravitational wave detector. Instead of using their non-contact re-entrant cavity, we plan to change it to a closed one to be used in the parametric transducers of the Brazilian Mario Schenberg detector. The performance of the transducer depends on some cavity parameters such as the electrical Q and the electrical coupling. We measured the resonant frequency and the loaded electrical Q as a function of the probe position in a closed niobium #approx#15 GHz cavity operating at 4.2 K.
The proposed Sudbury Neutrino Observatory is based on a Cherenkov detector which has a total of 1000 tonne of heavy water and 1800 tonne of light water for its sensitive volume. The detector is optimized for the measurement of extra-terrestrial low energy electron neutrinos and electron antineutrinos spectra as well as the total neutrino flux independent of neutrino flavours. It will delineate the Standard Solar Model and neutrino propagation aspects of the solar neutrino problem, provide detailed information on the dynamics of stellar collapse and measure neutrino masses and oscillation parameters with high sensitivity.
A black neutron detector of novel design has been constructed and tested as a neutron flux monitor. The neutron time-of-flight (TOF) technique was used to measure the zero degree neutron spectrum from a subnanosecond pulsed proton beam on a thick metallic lithium target. We describe the detector, discuss the shielding arrangement and electronics, determine the low-energy cut-off. We calculate the efficiency, show spectra and compare measured zero degree differential cross-section of the {sup 7}Li(p, n{sub 0}){sup 7}Be reaction with recommended published cross-sections. (orig.).
A method and apparatus for nuclear borehole logging, and in particular, neutron porosity logging, uses a neutron source, and a pair of spaced lithium detectors, preferably Li"6I crystal or Li"6 doped glass, to detect neutrons emitted from a borehole formation being logged. The spectrum developed by the lithium detectors is processed to remove the gamma ray background radiation and the hydrogen absorption peak, thus allowing a more accurate neutron count. A Gaussian curve is fitted to the neutron peak of the spectrum, the curve eliminating the hydrogen absorption peak. The area under this Gaussian curve represents the neutron count. (author).
Long-Range Alpha Detector (LRAD) systems are designed to monitor alpha contamination by measuring the number of ions in the air. Alpha particles are a form of ionizing radiation and a typical 5-MeV alpha particle will create about 150,000 ion pairs in air. Field tests at various DOE sites have shown that LRAD Surface Soil Monitors (SSM), Sample Monitors, and Object Monitors are faster and more sensitive than traditional alpha detectors for measuring alpha contamination. This paper discusses the various applications of LRAD technology to low-level radioactive waste management.
A large acceptance, high stopping power Bragg curve spectrometer has been developed for use in coincidence experiments with heavy ions. The electron collection fields are radial and position information is obtained from a resistive anode. The detector is 60 cm deep and operates at pressures of up to 2.5 atm of P-10 gas. It is mated to a scattering chamber which allows it to be moved out of plane during coincidence measurements. Factors affecting the performance of the detector are discussed, and results obtained with the detector are presented. (orig.).
A large acceptance, high stopping power Bragg curve spectrometer has been developed for use in coincidence experiments with heavy ions. The electron collection fields are radial and position information is obtained from a resistive anode. The detector is 60 cm deep and operates at pressures of up to 2.5 atm of P-10 gas. It is mated to a scattering chamber which allows it to be moved out of plane during coincidence measurements. Factors affecting the performance of the detector are discussed, and results obtained with the detector are presented. (orig.).
Recent rapid growth in mobile computing technologies enables telemedicine applications to operate on mobile devices. Our focus is on the design of an integrated electrocardiogram (ECG) beat detector on a Personal Digital Assistant (PDA) platform for the health screening process. The ECG beat detector module will be supported by the PDA version of Personal Health Information Management System (PHIMS) and Facilitated Accurate Referral Management System (FARMS) through wireless network infrastructure as a home-based mobile cardiac monitoring solution. PMID:17282192
Jan 13, 2011 ... This 360-degree mosaic of images from the navigation camera on ... The Radiation Assessment Detector, shown prior to its September 2010 ...
The Bragg-curve detector of the parallel plate ionization chamber type generates a signal that is a distorted replica of the original Bragg-curve. In result of this distortion, the signal peak height is not only a function of the atomic number of the heavy ion, as it is often stated, but also of the particle mass. This mass effect was studied with the aid of computer simulation, and it was found to be dependent on the Frisch grid to anode gap width and on the detector gas. The charge resolution of the detector is affected very significantly by this mass dependence of the signal peak height. Therefore, a careful selection of the detector gas and the grid to anode gap width is necessary, if good charge resolution over a wide range of heavy ions is required. (orig.).
A Bragg curve detector (BCD) has been designed and built to be used for AMS purposes. Its design is described and its performance, obtained in tests at the Australian National University (ANU), is reported. At a {sup 36}Cl energy of 154 MeV, the energy resolution was found to be 0.38%, and the charge resolution 1.3%. The {sup 36}Cl and {sup 36}S are completely discriminated. Good separation was also achieved at 64 MeV, and a measurement at this energy of the {sup 36}Cl/Cl ratio of a sample measured previously at 154 MeV with the standard ANU ionization detector agreed well with the earlier value. This very simple detector has been shown to be suitable for use in AMS programs.
Jan 18, 2011 ... The Radiation Assessment Detector, shown prior to its September 2010 ... This 360-degree panorama shows the vista from the location where ...
The properties of individual radioactive particles present in a sample, such as a swipe, are more interesting than bulk properties of the sample. The present work focuses on instrumentation that provides position-sensitive spectral information non-destructively from the sample. The experimental part of the work was realized using a device called PANDA (Particles And Non-Destructive Analysis). The detector setup used in the study contains a broad-energy HPGe gamma-ray detector and a position-sensitive alpha detector. Both detectors are connected to a time-stamping event-mode data acquisition system. The method is shown to locate particles with sub-millimetre accuracy and distinguish the interesting particles from non-interesting ones. (author)
Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8mA, and a slow photoresponse with a rise time of 5min and a decay time of 7min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the d...
A time-of-flight (TOF) spectrometer has been constructed at the JAERI 20 MV tandem accelerator facility. A position-sensitive start detector, which consists of a thin carbon foil, microchannel plates and a resistive plate, was developed for the TOF measurements through the spectrometer. The time and position resolutions obtained were 120 ps and 0.3 mm for ..cap alpha.. particles from /sup 241/Am, respectively. A two-dimensional position-sensitive detector was also developed to measure the solid angle of the spectrometer and the maximum solid angle obtained was 9.5 msr. As a particle detector a Bragg curve ionization chamber was developed. From the Bragg curves of heavy ions in the detector, energies, ranges and Bragg curve peaks were measured and used for particle identification. The resolving power Z/..delta..Z of the atomic number was about 50.
We studied the effects of small, <20 {micro}m, Te inclusions on the energy resolution of CdZnTe gamma-ray detectors using a highly collimated X-ray beam and gamma-rays, and modeled them via a simplified geometrical approach. Previous reports demonstrated that Te inclusions of about a few microns in diameter degraded the charge-transport properties and uniformity of CdZnTe detectors. The goal of this work was to understand the extent to which randomly distributed Te-rich inclusions affect the energy resolution of CZT detectors, and to define new steps to overcome their deleterious effects. We used a phenomenological model, which depends on several adjustable parameters, to reproduce the experimentally measured effects of inclusions on energy resolution. We also were able to hound the materials-related problem and predict the enhancement in performance expected by reducing the size and number of Te inclusions within ...
An optimal deployment pattern of flux mapping detectors for a Canada uranium-deuterium (CANDU)-600 pressurized heavy water reactor (PHWR) is determined by obtaining an optimal feedback relationship between flux measurements and zone controllers. The reactor core is modeled with a time-dependent two-group, two-dimensional diffusion equation, and flux perturbation are expressed by model expansions. The modal expansion coefficients are used as elements of the state vector representing the system dynamics. An optimal feedback matrix connecting the flux measurement vector to the control vector is derived by minimizing a quadratic performance index involving both the state and control vectors. We obtain the detector effectiveness in terms of the optimal feedback matrix and determine optimal detector locations for the Wolsung Unit 1 reactor in Korea. We have tested the methodology through evaluation of flux maps generated through ...
The Bragg-curve detector of the parallel plate ionization chamber type generates a signal that is a distorted replica of the original Bragg-curve. In result of this distortion, the signal peak height is not only a function of the atomic number of the heavy ion, as it is often stated, but also of the particle mass. This mass effect was studied with the aid of computer simulation, and it was found to be dependent on the Frisch grid to anode gap width and on the detector gas. The charge resolution of the detector is affected very significantly by this mass dependence of the signal peak height. Therefore, a careful selection of the detector gas and the grid to anode gap width is necessary, if good charge resolution over a wide range of heavy ions is required.
The bandwidth of LIGO-like terrestrial interferometric gravitational wave detectors is set by the pole of the Fabry-Perot cavities within the arms of the Michelson interferometer. This constraint arises because the gain of gravitational wave-induced signal sidebands is limited to frequencies within the linewidth of the cavities. The nature of standard Fabry-Perot cavities is such that one cannot independently adjust for increased gain without suffering a loss of bandwidth. If these quantities could be decoupled, the resulting improvement in bandwidth may lead to viable high frequency detectors. A pair of anti-parallel diffraction gratings within a Fabry-Perot cavity can increase the bandwidth of a LIGO-scale detector by a factor of #approx#1000.
Apr 18, 2008 ... The FSS was produced by point-source filtering the individual detector data ... a 1-sigma noise map; and a coverage map giving the count of ...
We performed both a laboratory and field intercomparison of two novel glass-based retrospective radon detectors previously used in major radon case-control studies performed in Missouri and Iowa. The new detectors estimate retrospective residential radon exposure from the accumulation of a long-lived radon decay product, Pb-210, in glass. The detectors use track registration material in direct contact with glass surfaces to measure the alpha emission of a Pb-210 decay product, Po-210. The detector's track density generation rate (tracks cm{sup -2} hr{sup -1}) is proportional to the surface alpha activity. In the absence of other strong sources of alpha emission in the glass, the implanted surface alpha activity should be proportional to the accumulated Po-210 and hence, the cumulative radon gas exposure. The goals of the intercomparison were to: (1) perform collocated measurements using two ...
The Steam Generator (SG) serves as an interface between primary and secondary cycle in Pressurized Heavy Water Reactor (PHWR). Failure of steam generator tubes result in leaking of active heavy water in the secondary closed loop. In Tarapur Atomic Power Station-3 and 4 (TAPS- 3 and 4), Scintillator detectors are provided to detect on line heavy water leakages in SG and moderator heat exchangers by monitoring Nitrogen-16 (16N) and Oxygen-19 (19O) activities. Efficacy of detection of these activities at designed detector position on SG blow down line in presence of background radiation field is analysed theoretically. The count rate of 19O and 16N estimated at the detector position inside Reactor Building (RB) shows that detectors only respond to very high leak rates due to presence of high ambient radiation level even though sensitivity is appreciably good. For detector position in ...
The authors are developing a high specificity detector for detecting the increased metabolic rate of breast tumors. Positron emission mammography (PEM) provides a highly efficient, high spatial resolution positron imaging system. PMT plays a very important role in PEM detectors, because most of the systems consist of scintillator arrays coupled with PMT. Our detector is composed of 20 x 20 arrays of 2 mm x 2 mm x 20 mm of Bi_4Ge_3O_1_2 (BGO) scintillators and a novel flat panel position-sensitive PMT (FP-PS-PMT)-Hamamatsu R8400-00-M256. Spatial resolutions of 2.0 mm FWHW and energy resolutions of 23% FWHM are achieved. (authors)
Reducing count losses and pile-up pulse effects in quantitative and qualitative analysis is necessary for accuracy of analysis. Therefore, the optimum peaking time for particular detector systems is important. For this purpose, pure Se and Zn elements were excited by 59.5 keV ?-rays from a 50 mCi 241Am annular radioactive source in this study. The characteristic x-rays emitted from pure Se and Zn elements were detected by using an ultra low energy Ge (Ultra-LEGe) detector connecting Tennelec TC 244 spectroscopy amplifier at different peaking time modes. Overall pulse widths were determined by HM 203-7 oscilloscope connecting amplifier. The proper peaking time for ultra low energy germanium detector (Ultra-LEGe) is determined about 4 ?s.
FIG. 4. Power Spectral Density of the MAP W11 radiometer. The red and black traces are the power spectral density measurements of the two detectors on the ...
In this note we describe a support structure which will hold detector systems (ITS, TPC, TOF) inside the large solenoid. An overall view of ALICE detector is shown on Fig.1. The support structure consists of 2 rings which fixed to an iron yoke and spokes which connect TPC and TOF to these rings. The ITS is connected by spokes to TPC end caps. Between coils there are 7cm spacings which will allow to fix rings to the yoke this support structure will allow to assemble ITS, TPC and TOF together (Fig.2) somewhere on the surface and then transport to the pit and install in the magnet. Two rings (1) are connected with four bars (2). On the bottom bars there are rolls (3) which will allow smoothly insert detectors into the magnet. Spokes (4) are uniformly distributed.
CR-39 detectors have been exposed to a 5.9-MeV antiproton beam using the low energy antiproton ring (LEAR) facility at CERN. At this energy, tracks of antiprotons appear in a CR-39 detector after 135 min of etching in 6 M NaOH at 70C. Fluence of the antiproton beam has been determined using track density. We have also found tracks in the etched CR-39 detector at different depths (250-500 mum). These tracks have resulted from the annihilation of antiprotons with the constituents (H, C and O) of the CR-39 detector. The goal of the experiment is to develop a simple and low-cost method to study properties of antiparticles and those formed after annihilation of these particles with the target matter.
Mar 1, 2011 ... Currently there is no compact, portable and real time neutron detector instrumentation available for use inside spacecraft or on planetary ...
The quantum nature of the electromagnetic field imposes a fundamental limit on the sensitivity of optical precision measurements such as spectroscopy, microscopy, and interferometry. The so-called quantum limit is set by the zero-point fluctuations of the electromagnetic field, which constrain the precision with which optical signals can be measured. In the world of precision measurement, laser-interferometric gravitational wave (GW) detectors are the most sensitive position meters ever operated, capable of measuring distance changes on the order of 10^-18 m RMS over kilometer separations caused by GWs from astronomical sources. The sensitivity of currently operational and future GW detectors is limited by quantum optical noise. Here we demonstrate a 44% improvement in displacement sensitivity of a prototype GW detector with suspended quasi-free mirrors at frequencies where the sensitivity is shot-noise-limited, by ...
feature similar to the face detection in Intel's OpenCV library, implement it in Matlab code, and test the performance of the new ROI detector against the ...
Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...
The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...
Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are ...
The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy ...
In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of Physics.}
We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.
The morphology and size characteristics of the population of AlP particles produced by treatment of a pure aluminium melt with an Al-Fe-P inoculant addition have been determined. The particles are shown to be polyhedral like the primary silicon they nucleate in hypereutectic Al-Si alloy melts and to be prone to clustering at increased phosphorus addition levels. The number of AlP particles per unit area is shown to be comparable with the corresponding number density of polyhedral primary silicon in Al-20 wt.% Si treated in the same way under identical conditions which is consistent with earlier conclusions that AlP acts as a nucleation catalyst for primary silicon in hypereutectic Al-Si casting alloys. (orig.)
The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...
A solar thermophotovoltaic (STPV) system has both terrestrial and space applications because thermal energy storage can be utilized. Excellent properties (heat of fusion=1800 j/gm and melting temperature=1680 K) make silicon the ideal thermal storage material for an STPV system. Using a one dimensional model with tapering of the silicon storage material, it was found that several hours of running time with modest lengths ({approximately}15 cm) of silicon are possible. Calculated steady-state efficiencies for an STPV system using an Er-YAG selective emitter and ideal photovoltaic (PV) cell model are in the range of 15{percent}{endash}17{percent}. Increasing the taper of the storage material improves both efficiency and power output. {copyright} {ital 1996 American Institute of Physics.}
Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.
Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.
More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992
Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.
There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).
In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.
Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)
Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).
New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)
A proposed metallization system for large area silicon solar cells with shallow junctions is outlined, and its desirable features are discussed. A baseline process sequence for the nickel palladium metallization system (NPMS) is delineated. This baseline process sequence is serving as the starting point from which process variations are being performed. The eventual goal is optimization of the NPMS process and determination of the control ranges for NPMS process variables. Initial studies of palladium displacement and electroless chemical plating solutions used in the baseline NPMS have begun and progress is reported. In support of this work, an annotated bibliography (45 citations) dealing primarily with palladium plating and palladium-silicon contact formation has been prepared (and will be subject to updating in the future reports).
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.
Strut lattice structures of reaction-bonded silicon infiltrated silicon carbide ceramics (RB-SiSiC) for air-fuel mixture formation and for nonstationary lean-burn under pressure applications were fabricated. The lattice design with a high porosity >80% was shaped by indirect three-dimensional printing. It was shown that pre-ignition processes in the porous reactor are much faster than in a free combustion, especially at lower temperatures. Interaction of high velocity diesel jets with cylindrical strut ligaments of the SiSiC lattice structure offers a new possibility for quick and efficient fuel distribution (multi-jet splitting) in space.
In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.
The effect of alloying low carbon 18Cr-30Ni steel with silicon (up to 5.1%), copper (up to 5.4%), cobalt (up to 15.3%) on the resistance to corrosion cracking and pitting corrosion, is studied. Tests on uniaxial tension are carried out in 42% MgCl_2 solution and gravimetric studies in 10% FeCl_3x6H_2O. It is established that alloying steel of the Kh18N30 type with silicon increases strength and resistance to corrosion cracking. Copper and cobalt decrease a resistance to pitting corrosion but somewhat increase a resistance to corrosion cracking.
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10"1"4 cm"-"2) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.
The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.
The Feynman-#alpha# method was applied to measurement of reactivity and the ability of this method for a real-time reactivity monitoring system was assessed. In the experiment, all measured data by BF_3 detectors were stored in a multi-channel scaler controlled by a personal computer, and they were analyzed to obtain prompt neutron decay constant (#alpha#) and reactivity with consideration of dead time of detector. It was found that #alpha# could be obtained almost in a real-time even for both positive and negative reactivities by the present experimental technique. (author).
Recent developments in design and production of thermal neutron detectors based on a crystalline Si diode coupled to a Gd converter are reviewed. The most significant results of neutron test measurements carried out on prototype systems and pointing out the performances of the device are reported. Progress through various detection schemes and technological solutions for the production of a real time neutron counter for routine operation are outlined.
Disclosed herein is a radiation detector providing for the in situ automatic sampling of fluids containing substances emitting radiation, especially Cerenkov radiation. The detector permits sampling within well casings and is self-purging such that no additional provisions must be established for the storage and disposal of contaminated fluids.
We report on the activities of the High Energy Physics Group at the University of Texas at Arlington for the period 1994-95. We propose the continuation of the research program for 1996-98 with strong participation in the detector upgrade and physics analysis work for the D0 Experiment at Fermilab, prototyping and pre-production studies for the muon and calorimeter systems for the ATLAS Experiment at CERN, and detector development and simulation studies for the PP2PP Experiment at Brookhaven.
Radon concentration measurement in the ground can be used for the prospecting for uranium and earthquake prediction. Some results of radon concentration measurement in the soil are presented here. The moisture condensation at the detector surface can affect on the detection efficiency. Due to this problem we tested a few filter papers on water permeability. The ratio of track densities on solid state nuclear track detector (SSNTD) in the open and the closed diffusion chamber is also determined. (author)
The possibility of fabricating a superconductive vertex detector is discussed on the basis of a preliminary experiment. The experiment has shown that an indium strip 15 mm long, 20 ..mu..m wide and 0.1 ..mu..m thick is changed from the superconductive state to the normal state when struck by a single 5.4 MeV alpha particle.
The transition radiation detector (TRD) for the D{Phi} experiment is currently in operation at Fermilab. Transition radiation production, which has been clearly observed in the collider data, makes the TRD a valuable tool to discriminate electrons and hadrons. We describe an algorithm based on the truncated energy, and illustrate its use for top signal and background. (authors). 7 refs., 6 figs., 2 tabs.
A large Bragg-curve spectrometer has been constructed and tested. The detector has a cylindrical geometry and operates with a homogeneous electric field. Energy resolutions of <0.8% and Z resolutions of Z/..delta..Z=80 have been achieved for eleastically scattered /sup 58/Ni ions. These results demonstrate the suitability of this large solid-angle detector for use in a wide variety of heavy-ion scattering experiments.
A large Bragg-curve spectrometer has been constructed and tested. The detector has a cylindrical geometry and operates with a homogeneous electric field. Energy resolutions of <0.8% and Z resolutions of Z/#DELTA#Z=80 have been achieved for eleastically scattered "5"8Ni ions. These results demonstrate the suitability of this large solid-angle detector for use in a wide variety of heavy-ion scattering experiments. (orig.).
MPFDs are a new class of detectors that utilize properties from existing radiation detector designs. A majority of these characteristics come from fission chamber designs. These include radiation hardness, gamma-ray background insensitivity, and large signal output.
A multi-spectral Schottky barrier infrared detector array in which individual pixels of radiation from a remote radiating object are detected by two or more Schottky barrier infrared radiation detectors each having a different spectral response so as to provide a ''color'' discrimination for the array.
A multi-spectral Schottky barrier infrared detector array in which individual pixels of radiation from a remote radiating object are detected by two or more Schottky barrier infrared radiation detectors each having a different spectral response so as to provide a ''color'' discrimination for the array.
This study mainly concerns medical explorations by radioisotopes. Detectors with medical exams and applications are described. Ionisation chambers, semiconductor detectors and scintillation counters are also presented. Uses of radioisotopes in medicine in vivo and in vitro techniques are explained. Examples of scintiscanning are given like: angiography, nuclear cardiography and thyroid scintiscanning. The importance of the study is to present a panorama of nuclear medicine laboratories -at the time- in hospitals in Lebanon.
In the present paper, a possible interaction region layout of the VLEPP based Photon Linear Collider (PLC) with ultimate luminosity is discussed. In order to remove spent electron beams, the crab-crossing scheme is used. The detector is protected from produced pairs and secondary particles by means of the detector magnetic field and a shielding mask. ((orig.)).
This patent describes a {gamma}-ray detector. It comprises: a dislocation-free single crystal having an input surface and a transmission surface at opposite ends thereof; an active shield surrounding the crystal and functioning as an anticoincidence counter; and {gamma}-ray detector means disposed adjacent the transmission surface of the crystal for receiving and detecting {gamma}-rays of a predetermined wavelength incident on the input surface of the crystal at a specific Bragg angle and transmitted through the crystal.
We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)
We present the first results from tests of a MICROMEGAS detector manufactured using the so-called "bulk" technology and having a resistive cathode mesh instead of the conventional metallic one. This detector operates as usual MICROMEGAS, but in the case of sparks, which may appear at high gas gains, the resistive mesh reduces their current and makes the sparks harmless. This approach could be complementary to the ongoing efforts of various groups to develop spark-protected MICROMEGAS with resistive anode planes.
The history of explosives vapor detection includes almost every detection strategy known to man. Initial attempts to utilize these techniques were dismal failures. However, with the development of the Electron Capture Detector (ECD), the first promising detection of explosives vapors became possible. The present commercial explosives detectors detect the higher vapor pressure materials but not the whole spectrum. This paper describes the basic properties of explosives molecules and our research to utilize these properties for increased detection sensitivity.
The IGC-30 HPGe detector with MCA 'CANBERRA-10 PLUS' allows to determine surface contamination of areas of any type with a minimum error in radius 8-10 m, at a 'uniform' contamination. A modification of the CANBERRA hardware and software is described allowing determination of both the activity of a possible 'radioactive spot' and the activity of the whole observed surface. (author).
In 1998, research began at Idaho National Engineering and Environmental Laboratory to investigate the application of {sup 6}Li and {sup 7}Li isotopes to the measurement of neutron and gamma radiation. Various size pairs of {sup 6}Li and {sup 7}Li based detectors were exposed to mixed neutron and gamma radiation. Experiments demonstrated that these detectors could be used to measure low level neutron radiation in the presence of high level gamma radiation. (author)
In 1998, research began at Idaho National Engineering and Environmental Laboratory to investigate the application of "6Li and "7Li isotopes to the measurement of neutron and gamma radiation. Various size pairs of "6Li and "7Li based detectors were exposed to mixed neutron and gamma radiation. Experiments demonstrated that these detectors could be used to measure low level neutron radiation in the presence of high level gamma radiation. (author)
The kinetic parameters, ..cap alpha.. the coupling coefficient and tau-bar the mean neutron transit time have been determined using a reactor oscillator on the coupled-core of the Queen Mary College research reactor. By using correlation techniques it has proved possible to use detectors small enough to be inserted in the fuel tanks. It is shown that the simplified Baldwin model with one-group diffusion theory is inadequate to describe the kinetic behaviour and the experimentally-determined parameters are dependent upon the positioning of the detectors.
The working group reviewed the main difficulties foreseen in doing physics at a gamma-gamma collider. They discussed the requirements for the detector, calculated some of the signal and background rates, compared methods of measuring luminosity, looked at how to get the laser beams in, investigated ways of sweeping aside the electrons and considered ways of disposing of the used beams. No overwhelming obstacles were found but important questions still need to be answered. ((orig.)).
The working group reviewed the main difficulties foreseen in doing physics at a gamma-gamma collider. They discussed the requirements for the detector, calculated some of the signal and background rates, compared methods of measuring luminosity, looked at how to get the laser beams in, investigated ways of sweeping aside the electrons and considered ways of disposing of the used beams. No overwhelming obstacles were found but important questions still need to be answered. ((orig.)).
A portable fiber optic detector that senses the presence of specific target chemicals by electrostatically attracting the target chemical to an aromatic compound coating on an optical fiber. Attaching the target chemical to the coated fiber reduces the fluorescence so that a photon sensing detector records the reduced light level and activates an appropriate alarm or indicator.
A system for inspecting a ceramic component. The ceramic component is positioned on a first rotary table. The first rotary table rotates the ceramic component. Light is directed toward the first rotary table and the rotating ceramic component. A detector is located on a second rotary table. The second rotary table is operably connected to the first rotary table and the rotating ceramic component. The second rotary table is used to move the detector at an angle to the first rotary table and the rotating ceramic component.
A computer program 'CPA simulator' has been designed to simulate the response parameters of a typical charge preamplifier (CPA) used in nuclear front-end electronics. The response parameters are studied considering three common connection methods between the detector and the CPA. The simulator predicts and illustrates the role and influence of the different components of the CPA and detector circuits.
The purpose of this research was to: a) evaluate variations in sensitivity and uniformity of SPECT detectors during 360"0 rotation, b) explore the causes of the variations and c) to discuss a correction procedure. A flood source consisting of a lucite disc 47.7 cm in diameter containing 3 microcuries of Co-57 was constructed. This source can be firmly attached to the uncollimated detector guaranteeing no detector-source geometry change during rotation. Four different SPECT cameras were tested. Measurements were obtained at 45"0 intervals throughout a 360"0 rotation, and repeated in 3 different orientations with respect to the earth's magnetic field. In one camera the effects of the direction and strength of induced magnetic fields were studied. All detectors showed cyclic rotational variations in sensitivity; in three cameras 6%, in one 3%. The amplitude and phase of the sensitivity variation curves and ...
The theory of neutron moderation and spectroscopy are briefly reviewed, and moderators that are useful for Bonner sphere spectrometers are discussed. The choice of the neutron detector for a Bonner sphere spectrometer is examined. Spectral deconvolution methods are briefly reviewed, including derivative, parametric, quadrature, and Monte Carlo methods. Calibration is then discussed. (LEW)
The Steam Generator (SG) serves as an interface between primary and secondary cycle in Pressurized Heavy Water Reactor (PHWR). Failure of steam generator tubes result in leaking of active heavy water in the secondary closed loop. In Tarapur Atomic Power Station-3 and 4 (TAPS- 3 and 4), Scintillator detectors are provided to detect on line heavy water leakages in SG and moderator heat exchangers by monitoring Nitrogen-16 ("1"6N) and Oxygen-19 ("1"90) activities. Efficacy of detection of these activities at designed detector position on SG blow down line in presence of background radiation field is analysed theoretically. The count rate of "1"9O and "1"6N estimated at the detector position inside Reactor Building (RB) shows that detectors only respond to very high leak rates due to presence of high background even though sensitivity is appreciably good. For detector position out side ...
An imaging detector for {gamma}-rays ({approx equal}1 MeV) based on minicell MWPCs with converters and a position resolution of {Delta}x=0.5 mm has been developed and tested. Very high rate capability (>10{sup 8}/cm{sup 2} s) and a special readout for suppression of scattered radiation are implemented allowing to enhance the measured contrast. The relevant physical processes are discussed and first pictures are presented. (orig.).
The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with {open_quotes}single carrier{close_quotes} response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation ...
Surface barrier detectors may be damaged, because of microplasma breakdown, in rapid application of bias voltage. The high performance FETs of very low noise preamplifiers may also be damaged by rapid changes of the bias voltage. The electronic device described permits the gradual application and removal of the bias voltage, without any influence on the power supply specification. (Auth.).
A large-acceptance Bragg curve spectrometer with a longitudinal electron collection field and a segmented anode has been constructed and tested. The effects on the charge resolution of the entrance angle and entrance position of the incident particle have been studied. Simulations have been done in order to isolate the contribution to the overall detector performance of the signal-shaping electronics from that of the intrinsic design of the detector. ((orig.))
Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...
Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...
As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...
Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.
In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...
The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission ...
... having high fluidity. The SC-51A alloy contains 4.5 to 5.5% silicon, 1 to 1.5% coppers .4 to .6% magnesium, o35% sine, .8% iron, .5% manganes*, ...
The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the evolution of the surface finish level of a silicon mirror after ion erosion at various ...
Separate effect of impurities and alloying additions of phosphorus, silicon, boron, carbon, sulphur, magnesium, copper, aluminium and molybdenum on the tendency to intergranular corrosion (IGC) of quenched highly pure steel Fe-20% Cr-20Ni in boiling solution 27% HNO_3+40 g/l Cr"6"+, as well as in sulphuric and nitric acids mainly at potentials, corresponding to repassivation range, has been studied. It is shown that steel susceptibility to IGC depends on impurity nature and to a high extent is determined by the potential value independent of the way of its achieving. The most unfavourable effect on stability of grain boundaries is produced by microadditions of boron as well as by impurities of phosphorus and silicon. To ensure increased corrosion resistance of the investigated steel against IGC in highly oxidative media the pontent of phosphorus and silicon impurities unit should not exceed 0.01 and 0.2% respectively. At ...
An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die.
This paper reports that the co-deposition of chromium and silicon into a 2.25Cr-1.0Mo-0.15C steel, alloy 800, and type 304 stainless steel has been achieved using the pack cementation process. The ferritic coating produced on the 2.25 Cr-1.0Mo steel was approximately 225 {mu}m (9 mils) thick, whereas the inward diffusion of chromium and silicon produced a two-phase structure of ferrite and austenite for type 304. Chromium and silicon were incorporated into the austenitic solid solution upon diffusion into alloy 800. All coatings had approximately 25 to 35 wt% Cr and 2 to 3% Si at the surface. Cyclic oxidation testing in air of the coated 2.25Cr-1.0Mo steel (T = 700{degrees} C) and type 304 (T = 1035{degrees} C) showed a dramatic decrease in the oxidation kinetics compared to the original uncoated alloys. The cyclic oxidation of alloy 800 was also improved.
The effects of sennosides on colonic motility were investigated in eight conscious dogs chronically fitted with two strain gauge transducers in the proximal colon, an intracolonic silicone catheter...Full Text Available
An earlier representation of the radial distribution of dose about the path of a heavy ion in liquid water is modified and extended to include silicon, lithium fluoride, and sodium iodide. 6 refs., 5 figs., 1 tab.
ADVANCED MODELING, S IMULATION, AND ANALYSIS (ROADMAP 14). ...... Metal/Silicon Extraction from Regolith & manufacturing ..... addresses solar power, energy storage (in conjunction with solar power and as a prime source of ...