CERN Document Server

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

CERN Document Server

The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.

British Library Electronic Table of Contents (United Kingdom)

The design and first results from a Double Sided Silicon Strip Detector (DSSSD) recently installed at the Lund Nuclear Microprobe facility (NMP) are presented. The detector has 64 sector strips and 32 ring strips, which in combination give more than 2000 detector cells, each with characteristics comparable with a standard surface barrier detector (SBD). The detector has been tested both with radioactive sources and with different ion beams and energies. The most striking features are the high rate virtually pile-up free operation and also the possibility of detailed measurement of angular distributions.

Wastenet

...In-Well Air Stripping ...

Energy Technology Data Exchange (ETDEWEB)

An experimental evaluation of the Fano factor F in silicon at hard X-ray energies (5.9-136.5 keV) has been performed by means of a low-noise, high charge collection efficiency silicon drift detector with on-chip electronics. A dependence of F from the detector temperature as well as from the energy of the X-ray photons has been found. Assuming a pair creation energy equal to 3.64 eV, at +20 deg. C the F factor was observed to vary from 0.124{+-}0.006 at 5.9 keV up to 0.159{+-}0.002 at 122 keV. At -35 deg. C, the change of F with respect to the photon energy was less remarkable but nevertheless statistically significant, from 0.123{+-}0.002 at 5.9 keV up to 0.134{+-}0.001 at 122 keV. To our knowledge, the present results represent the first experimental evidence of an energy dependence of the Fano factor in silicon at hard X-ray energies.

CERN Document Server

The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker ...

International Nuclear Information System (INIS)

The bituminzation of decontamination and ion exchange resin stripping wastes with four grades of asphalt was investigated to determine the effects of asphalt type on the properties of the final products. All waste forms deformed readily under light loads indicating they would flow if not restrained. It was observed in all cases that product leaching rates increased as the hardness of the asphalt used to treat the waste increased. If bituminization is adopted for any Ontario Hydro aqueous radioactive wastes they should be treated with soft asphalt to obtain optimum leaching resistance and mechanical stability during interim storage should be provided by a corrosion resistant container.

International Nuclear Information System (INIS)

A compact, quasi-4? position sensitive silicon array, TIARA, designed to study direct reactions induced by radioactive beams in inverse kinematics is described here. The Transfer and Inelastic All-angle Reaction Array (TIARA) consists of 8 resistive charge division detectors forming an octagonal barrel around the target and a set of double-sided silicon-strip annular detectors positioned at each end of the barrel. The detector was coupled to the ?-ray array EXOGAM and the spectrometer VAMOS at the GANIL Laboratory to demonstrate the potential of such an apparatus with radioactive beams. The 14N(d,p)15N reaction, well known in direct kinematics, has been carried out in inverse kinematics for that purpose. The observation of the 15N ground state and excited states at 7.16 and 7.86 MeV is presented here as well as the comparison of the measured proton angular distributions with DWBA calculations. Transferred l-values are in very good agreement ...

CERN Document Server

Microbonding of the CMS Tracker Inner Barrel (TIB) and Tracker Inner Disks (TID) modules was shared among six different Italian Institutes. The organization devised and the infrastructure deployed to handle this task is illustrated. Microbonding specifications and procedures for the different types of TIB and TID modules are given. The tooling specially designed and developed for these types of modules is described. Experience of production is presented. Attained production rates are given. An analysis of the microbonding quality achieved is presented, based on bond strengths measured in sample bond pull tests as well as on rates of bonding failures. Italian Bonding Centers routinely performed well above minimum specifications and a very low global introduced failure rate, at the strip level, of only $\\sim$0.015 \\% is observed.

CERN Document Server

Silicon sensors have about ten times improved radiation hardness around 130 K temperature, compared with the state-of-art sensors close to room temperature. This is based on the Lazarus effect studied by the RD39 Collaboration of CERN. Other benefits of low temperatures will also be discussed. We shall describe the conceptual design of low-mass detector modules cooled using two-phase flow of argon in miniature cooling pipes integrated in the module structure between the sensors and the readout hybrid circuit. The main engineering features of the cooling system and mechanical support structures are discussed, as well as the benefits arising from the operation of the tracker under cryogenic vacuum. 4 Refs.

British Library Electronic Table of Contents (United Kingdom)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

International Nuclear Information System (INIS)

This chapter is an overview of total-ionizing-dose and single-event hardening techniques and should be used as a guide to a range of research publications. It should be stressed that there is no clear and simple route to a radiation-tolerant silicon integrated circuit. What works for one fabrication process may not work for another, and there are many complex interactions within individual processes and designs. The authors have attempted to highlight the most important factors and those process changes which should bring improved hardness. The main point is that radiation-hardening as a procedure must be approached in a methodical fashion and with a good understanding of the response mechanisms involved.

Energy Technology Data Exchange (ETDEWEB)

Silicon nitride based ceramics have attracted considerable attention as good candidates for structural applications due to their excellent mechanical properties including strength, hardness, fracture toughness, and high temperature strength. These properties are strongly influenced by grain size and morphology, and by the degree of crystallinity and chemistry of grain boundary phases. In this work, the microstructure of Si{sub 3}N{sub 4} densified with Nd{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} sintering additives was studied. Sintered samples were polished and plasma etched for microstructural analysis using scanning electron microscope. Quantitative evaluation of materials microstructure was accomplished using Quantikov software. Fracture toughness was measured by Vickers indentation method. The observed microstructure is typical of silicon nitride based materials and is characterized by high aspect ...

Energy Technology Data Exchange (ETDEWEB)

AZ31 and experimental ZMA611 alloys were strip cast into 2 mm thick strips. The as-cast AZ31 alloy strip consists of columnar dendrites. On the other hand, as-cast ZMA611 alloy strip shows equiaxed dendritic structure through the thickness of strip. These alloys were subjected to various thermomechanical treatments and their tensile properties were evaluated. Strip cast AZ31 alloy in H24 condition has equivalent yield and tensile strengths with similar ductility compared to commercial ingot cast AZ31-H24 alloy, indicating that strip casting is a viable process for the fabrication of Mg alloy strips. The ZMA611 alloy has a large volume fraction of fine dispersoid particles in the microstructure, resulting from the beneficial effect of strip casting on microstructural refinement. It has been shown that ...

International Nuclear Information System (INIS)

Silicon nitride-based ceramics behavior is strongly influenced by microstructural parameters, which, in turn are determined by chosen densification method. Highly covalent Si-N bond hind are the silicon nitride densification. Therefore, metal oxides are used in order to get high density. However, such oxides must be carefully selected, because they affect the general macroscopic properties of sintered bodies. In the present work, the viability of rare earth concentrate use to produce #beta#--Si_6_-_xAl_xO_xN_8_-_x and its effect on mechanical properties of the sintering ceramics are studied. Additive composition, heating rate, soaking time and sintering temperature were took as variables. Hardness, fracture toughness, Young's modulus and flexural strength were investigated. Lattice parameter compositional dependence and secondary phases crystallized after past-sintering heat treatment were also determined. The results show ...

Energy Technology Data Exchange (ETDEWEB)

The purpose of this investigation was to simulate a machining front from an abrasive waterjet and its movements in a ceramic material. Wear factors affecting the abrasive waterjet nozzle were also to be established. Therefore, a low inclination angle (9[degree]) was used between the nozzle and test sample, simulating a moving machine front. A standard nozzle with an inner diameter of 0.76 mm was used in the test, and it was placed close to the samples. The outer diameter of the abrasive nozzle was 9.5 mm. The high wear rate from abrasive waterjets makes it possible to machine hard ceramics-including dense alumina, titanium boride, silicon nitride, and composites-at high machining speeds.

Science.gov (United States)

PMID:7177024

Science.gov (United States)

In this study, an apparatus suitable to photoacoustic (PA) imaging to measure blood-analysis and urinalysis is fabricated and its measurement scheme has been established for the first time. The PA imaging of urinalysis test strip, blood sugar test strip, and cholesterol test strip is performed. A calibration curve of PA measurement is obtained for a urine test strip. The detectivity is better than that obtained by an eye-measurement.

International Nuclear Information System (INIS)

Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 deg. C). The total pressure and the discharge current on the magnetron target were held constant at 0.5 Pa and 1 A, respectively. The energy and flux of ions bombarding the growing films were ...

Science.gov (United States)

NASA needed a way to safely strip old paint and thermal protection material from reusable components from the Space Shuttle; to meet this requirement, Marshall Space Flight Center teamed with United Technologies' USBI Company and developed a stripping sys...

International Nuclear Information System (INIS)

... deuteron beams differential cross sections dwba excitation functions mev range

Science.gov (United States)

PMID:10585377

Energy Technology Data Exchange (ETDEWEB)

It is reported about the adsorptive stripping voltammetric determination of uranium, antimony, tin, vanadium and molybdenum using chloranilic acid as complex forming reagent. The determination limits are in the l{sup 1}-range. (orig.) [Deutsch] Es wird ueber die Bestimmung von Uran, Antimon, Zinn, Vanadium und Molybdaen durch Adsorptions-Stripping-Voltammetrie mit Chloranilsaeure als Komplexbildner berichtet. Die Bestimmungsgrenzen liegen im ng l{sup -1} Bereich. (orig.)

Science.gov (United States)

The aim of the classical multiple test strip is to perform routine chemical analysis in one single operation, yielding maximum diagnostic and prognostic information. A maximum of 10 test areas should not be exceeded. The efficiency of the currently marketed test strips is discussed and improvements within acceptable price limits are suggested. PMID:10841930

International Nuclear Information System (INIS)

A method was proposed and examined to deposit thick cubic boron nitride (cBN)-rich layer of good adhesion to silicon substrate. The method combined (i) the insertion of a thick sp"2 buffer layer, and (ii) the use of an appropriate assist ion beam energy for the growth of the cBN-rich top layer. The sp"2-bonded boron nitride buffer layer was deposited under irradiation of ions with energies in the range of 200-360 eV. The buffer layer was found to contain curled graphitic basal planes, and so was supposed to be relatively deformable, and facilitate the relaxation of stresses in the cBN-rich top layer. The ion assist introduced during the growth of the cBN-rich layer was supposed to both create and annihilate defects, and so resulted in the generation and relaxation of internal stresses. Results showed that the insertion of a 492 nm sp"2 buffer layer, and the use of a beam energy of 450 eV for assisting the growth of the top layer can produce a 643-nm-thick cBN-rich ...

International Nuclear Information System (INIS)

AIM: To define the value of digital radiography with a clinical flat panel detector system for evaluation of wrist fractures in comparison with state of the art storage phosphor radiography. MATERIAL AND METHODS: Hard copy images of 26 fractured wrist specimens were acquired with the same exposure dose on a state of the art storage phosphor radiography system and a clinical flat panel detector. Image features like cortical bone surface, trabecular bone, soft tissues and fracture delineation were independently analysed by 4 observers using a standardised protocol. Image quality ratings were evaluated with an analysis of variance (ANOVA). RESULTS: Flat panel detector radiographs were rated superior with respect to cortical and trabecular bone representation as well as fracture evaluation, while storage phosphor radiographs produced better soft tissue detail. CONCLUSION: In some of the observed image quality aspects, the performance of caesium iodide/amorphous ...

International Nuclear Information System (INIS)

A high resolution Compton telescope has been identified by the Gamma Ray Astronomy Program Working Group (GRAPWG) as the highest priority major mission in gamma ray astrophysics following GLAST. This mission should provide 25-100 times improved sensitivity, relative to CGRO and INTEGRAL, for MeV gamma ray lines. It must have good performance for narrow and broad lines and for discrete and diffuse emissions. Several instrumental approaches are being pursued to achieve these goals. We discuss issues relating to this mission including alternative detector concepts, instrumental configurations, and background reduction techniques. We have pursued the development of position-sensitive solid-state detectors (Ge, Si) for a high spectral resolution Compton telescope mission. A #approx#1 m2 germanium Compton telescope of position-sensitive germanium detectors was the basis for one of the GRAPWG concepts. Preliminary Monte Carlo estimates for the sensitivities of this instrument are encouraging. ...

International Nuclear Information System (INIS)

Textured silicon nitride (Si_3N_4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si_3N_4, with emphasis on the anisotropic and abnormal grain growth of #beta#-Si_3N_4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for #beta#-Si_3N_4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the ...

International Science & Technology Center (ISTC)

The Development of Basic Plasma-Chemical Technology for Manufacture of Low Cost Crystal Silicon for Solar Power Plants.

Science.gov (United States)

We report here results of an application of single-nucleon stripping reactions at high energies (65 MeV/u) in inverse kinematics to obtain spectroscopic factors. From measurements of the partial cross-sections for ground and excited states in residual nuclei formed in one-proton stripping reactions, single particle orbits and occupancies of light nuclei have been studied in the s-d shell. Single proton stripping cross-sections of {sup 25}Al and {sup 26,27,28}P on a Be target have been measured using the S800 spectrograph and the NaI(Tl) array at the NSCL. These results indicate that this technique may provide a general tool for the intermediate energy range analogous to transfer (pick-up) reactions at low-energy.

Science.gov (United States)

... After strip- ping off the chloroform, the dibromo ethyl (EDBEB) compounds are separated from the m-BDBEB using a thin film evaporator. ...

Energy Technology Data Exchange (ETDEWEB)

Plastic formability of cast magnesium alloy that were hot rolled after roll strip casting was investigated to ascertain the feasibility of semi-solid strip casting process of AZ31B magnesium alloy. Hot rolling and heat treatment conditions were changed to examine which conditions were appropriate for producing AZ31B wrought magnesium alloys after strip casting process. Microscopic observation of the crystals of the manufactured wrought magnesium alloys was performed. It has been found that a limiting drawing ratio of 2.7 was possible in a warm deep drawing test of the cast magnesium alloy sheets after being hot rolled. (orig.)

Energy Technology Data Exchange (ETDEWEB)

Effects of rolling conditions on warm deep drawability of cast magnesium alloy that were hot rolled after roll strip casting were investigated to ascertain the feasibility of twin-roll strip casting process of AZ31B magnesium alloy. Hot rolling and heat treatment conditions were changed to examine which conditions were appropriate for producing AZ31B wrought magnesium alloys after strip casting process. Microscopic observation of the crystals of the manufactured wrought magnesium alloys was performed. It has been found that a limiting drawing ratio of 2.7 was possible in a warm deep drawing test of the cast magnesium alloy sheets after being hot rolled. (orig.)

UK PubMed Central (United Kingdom)

The fatigue and fracture behavior of hard tissues are topics of considerable interest today. This special group of organic materials comprises the highly mineralized and load-bearing tissues...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

British Library Electronic Table of Contents (United Kingdom)

We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.

Energy Technology Data Exchange (ETDEWEB)

The possibility of fabricating a superconductive vertex detector is discussed on the basis of a preliminary experiment. The experiment has shown that an indium strip 15 mm long, 20 ..mu..m wide and 0.1 ..mu..m thick is changed from the superconductive state to the normal state when struck by a single 5.4 MeV alpha particle.

Science.gov (United States)

The performance of the leukocyte test area of the new multiple urine test strip, Multistix-10-SG, was evaluated in both field trials and model experiments. The detection limit was found to be adequate for routine purposes. Unspecific reactions are rare and generally indicated by the results of the other test areas. PMID:3572312

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

CERN Document Server

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

Energy Technology Data Exchange (ETDEWEB)

This report documents the technical development for a patent disclosure of a double-clad process for the continuous casting of thin-strip carbon steel. The fundamental idea of the disclosure is to form a product strip by depositing molten steel between two, cooled, clad strips of the same material. The claimed benefits include: (a) the conservation of energy in steel making through the elimination of soaking pits and reheat cycles, and (b) an improved surface on both sides of the as-cast product such that it will be suitable for direct feed to a cold-reduction mill. However, the process as conceived is not necessarily limited to the casting of carbon steel, but may be also applied to other metals and alloys. The work is described under three headings as follows. Preliminary Considerations and Scoping Analysis presents the basic idea of the double-clad, thin-strip casting process; the energy conservation ...

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

Science.gov (United States)

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

Science.gov (United States)

A process is described for the recovery of uranium values from phosphoric acid utilizing an alkyl pyrophosphoric acid (Appa) primary extractant. After extracting the uranium from the phosphoric acid, the appa extractant is deactivated by heating and the uranium values stripped into a phosphoric acid strip solution containing ferric ion as a salting agent. The uranium values may then be re-extracted directly from this stripping solution without adjustment of its concentration into a dialkyl phosphoric acid trialkyl phosphine oxide synergistic extractant from which a relatively pure yellow cake is precipitated. A new procedure for preparing the requisite appa primary extractants is also disclosed.

International Nuclear Information System (INIS)

We have succeeded in aligning self-assembled structures by using a lithographically defined stripe. The 140 nm wide by 100 nm high SiO_2 strip is shown to guide the assembly of 500 nm latex spheres so that spheres are aligned along the strip and are in registration on either side of the strip. This method can be used to increase long-range ordering in magnetic storage systems without compromising the density. Inverse sphere Ni arrays were made by electrodeposition through the latex template. We also show that the hexagonal symmetry of the resulting inverse sphere Ni arrays can be simulated using the approach presented below.

British Library Electronic Table of Contents (United Kingdom)

The rolls and stand deflections induced by rolling force lead to a significant decrease in the radius prediction accuracy of the ring product in the in-plane roll-bending of strip. To precisely predict the deflections and control the radius, a new analytical model is developed. Numerical implementation is presented to solve the theoretical rolling force, the deflections as well as the inherent force-deflection relationship considering the interactions of the strip workpiece, the rolls and the stand. A series of profile measurements of the formed ring parts are made to assess the accuracy of the predicted deflections. Different control approaches are used in the experiments to validate the radius control model. The experimental results show that the model is reliable to control the radii wi...

International Nuclear Information System (INIS)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

CERN Document Server

A debris disk is a constituent of any planetary system surrounding a main sequence star. We study whether close stellar encounters can disrupt and strip a debris disk of its planetesimals in the expanding open cluster of its birth. Such stripping would affect the dust production and hence detectability of the disk. We tabulated the fractions of planetesimals stripped off during stellar flybys of miss distances between 100 and 1000 AU and for several mass ratios of the central to passing stars. We then estimated the numbers of close stellar encounters over the lifetime of several expanding open clusters characterized by their initial star densities. We found that a standard disk, with inner and outer radii of 40 and 100 AU, suffers no loss of planetesimals around a star born in a common embedded cluster with star density 20 000 pc^-3. In this environment, a disk loses >97% of its planetesimals around an M-dwarf, >63% ...

Science.gov (United States)

The beta titanium alloy, however, can be d_,_wn. _,plusor minus 0.010-inch_after the parts have been cold. Its availability in strip lengths and its good ...

Energy Technology Data Exchange (ETDEWEB)

The Micro-strip Metal Foil Detectors (MMFD) designed and used for the Beam Profile Monitoring (BPM) are discussed. The results obtained for the MMFDs produced by different technologies are presented. The MMFD deposited onto the 20 {mu}m thick Si-wafer has been used for the BPM of the 32 MeV alpha-particle beam at the MPIfK (Heidelberg) Tandem generator. Another MMFD with totally removed Si-wafer at the working area has been applied for the on-line X-ray BPM at the HASYLAB (DESY). One may conclude that the developed technology of the micro-strip metal detector manufacturing allows to provide non-destructive measurement of X-ray intensity distribution over area of up to 50 mm{sup 2} with an accuracy of 10-20 {mu}m with a possibility of its improvement by a factor 5. A sub-micron position resolution is expected by applying electron lithography for the strip pattern production.

Energy Technology Data Exchange (ETDEWEB)

Spray forming is an advanced materials processing technology that converts a bulk liquid metal to a near-net-shape solid by depositing atomized droplets onto a suitably shaped substrate. By combining rapid solidification processing with product shape control, spray forming can reduce manufacturing costs while improving product quality. De Laval nozzles offer an alternative method to the more conventional spray nozzle designs. Two applications are described: high-volume production of aluminum alloy strip, and the production of specialized tooling, such as injection molds and dies, for rapid prototyping.

Science.gov (United States)

The electron-capture processes of highly stripped ions of Fq+ (q=6,7,8) and Neq+ (q=7,8,9) in collisions with He atom were investigated using the energy-gain spectroscopy technique. A single dominant peak is observed in most of the energy-gain spectra except for the Ne7+ and Ne9+ spectra, in which two peaks are observed corresponding to the one-electron capture process into levels with different principal quantum number n.

Science.gov (United States)

Sep 1, 2011 ... Title: Hardness, density, and shrinkage characteristics of silk-oak from Hawaii. Author: Youngs, R. L.. Date: 1964. Source: Research note FPL ...

Energy Technology Data Exchange (ETDEWEB)

This report covers the test methods and equipment for testing aircraft armor both hard and soft. The hard armor are the typical ceramic type while the soft armor are various types of layered composite materials. 10 figs. (JEF)

Energy Technology Data Exchange (ETDEWEB)

This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

International Nuclear Information System (INIS)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

Energy Technology Data Exchange (ETDEWEB)

Grain refinement behavior of copper alloys cast in permanent molds was investigated. This is one of the least studied subjects in copper alloy castings. Grain refinement is not widely practiced for leaded copper alloys cast in sand molds. Aluminum bronzes and high strength yellow brasses, cast in sand and permanent molds, were usually fine grained due to the presence of more than 2% iron. Grain refinement of the most common permanent mold casting alloys, leaded yellow brass and its lead-free replacement EnviroBrass III, is not universally accepted due to the perceived problem of hard spots in finished castings and for the same reason these alloys contain very low amounts of iron. The yellow brasses and Cu-Si alloys are gaining popularity in North America due to their low lead content and amenability for permanent mold casting. These alloys are prone to hot tearing in permanent mold casting. Grain refinement is one of the solutions for reducing this problem. ...

International Nuclear Information System (INIS)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

CERN Multimedia

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long

UK PubMed Central (United Kingdom)

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)

International Nuclear Information System (INIS)

English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,

Science.gov (United States)

A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...

CERN Document Server

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

International Nuclear Information System (INIS)

Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

Energy Technology Data Exchange (ETDEWEB)

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

Science.gov (United States)

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

Energy Technology Data Exchange (ETDEWEB)

The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

Energy Technology Data Exchange (ETDEWEB)

Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual ...

Energy Technology Data Exchange (ETDEWEB)

This paper describes high speed rolling and gauge control in cold tandem mill for ultra-thin gauge strip at the Chiba Works of Kawasaki Steel Corporation. To improve the plate-out property of rolling oil, cationic polymeric coagulant was prepared. Rolling oil with cohesion independent of inorganic inclusions or phosphatide was developed, to improve the lubrication for cold rolling, remarkably. In addition, a low-cost Ti-enhanced work roll having high wear resistance and excellent grindability was developed. Rolling can be conducted at the optimal rolling roughness and operation can be performed at the highest rolling speed independent of the rolling treatment amount. Rolling speed at 2800 m/min was confirmed by developing the rolling oil with excellent lubrication and the work roll having high wear resistance. For the improvement of strip thickness accuracy at the steady state rolling, use of the backup roll as roller bearing was more effective ...

Energy Technology Data Exchange (ETDEWEB)

At tandem cold rolling mills in Kawasaki Steel, by means of applying newly developed strip longitudinal (rolling) and transverse gauge control systems, high accuracy of thickness of within {+-}0.5 % has been achieved over the full length and full width of cold rolled strip, as gauge accuracy in a coil in longitudinal and transverse directions has become an extremely important quality control item in the manufacturing of cold rolled sheets due to the stricter quality requirements of customers, in recent years. The longitudinal gauge accuracy has been improved by the development of a high-response drive system for a mill mair motor, an all-stands gauge control system and a dynamic set-up control system. The transverse gauge accuracy has been improved by applying a one-side tapered work roll shifting method and the development of an edge drop control system in terms of the optimum use of an edge drop sensor. (author)

British Library Electronic Table of Contents (United Kingdom)

Atrial natriuretic peptide (ANP) causes relaxation in the opossum lower esophageal sphincter. The effects of dendroaspis natriuretic peptide (DNP) and other natriuretic peptides in the lower esophageal sphincter were not known. We measured the relaxation of transverse strips from the guinea pig lower esophageal sphincter caused by DNP, ANP, brain natriuretic peptide (BNP), C-type natriuretic peptide (CNP), and a natriuretic peptide receptor-C agonist des[Gln^1^8, Ser^1^9, Gly^2^0, Leu^2^1, Gly^2^2]ANP(4-23) amide (cANF(4-23)) in vitro. In resting strips of the guinea pig lower esophageal sphincter DNP and BNP caused marked relaxations. Furthermore, in both sarafotoxin S6c and carbachol-contracted lower esophageal sphincter strips, DNP caused marked and BNP caused moderate, concentration-de...

Energy Technology Data Exchange (ETDEWEB)

The peak flux relationship between hard X-rays and microwaves from solar flares is studied using about 400 events simultaneously recorded with the hard X-ray burst spectrometer on the SMM satellite and the Nobeyama 17 GHz radiometer. The data indicate that the hard X-ray and microwave peak fluxes correlate best for X-ray energies of less than about 80 keV for impulsive flares and greater than about 360 keV for extended flares. By postulating that electrons responsible for microwave emission at 17 GHz are those emitting hard X-rays at these photon energies, it is concluded that: (1) in impulsive flares, microwaves at about 20 GHz are emitted mainly by electrons of less than about 200 keV from a layer through which the electrons stream down into the thick-target hard X-ray source; and (2) in extended flares, microwaves are emitted mainly by MeV electrons trapped in a coronal loop or ...

Energy Technology Data Exchange (ETDEWEB)

A new interest in magnesium alloys has arisen since light-weight constructions have become more and more attractive. Products that are currently available are mostly cast, forged, and extruded. A cost-effective production of sheet metals will render new perspectives in the design of light-weight constructions. The development of new casting technologies like thin slab casting or strip casting with an in-line rolling process is expected to result in a shorter processing time featuring a high potential of saving energy, time, and cost. Particular attention is paid to the casting process parameters such as casting speed and solidification speed. This article deals with some aspects of a magnesium-adapted single-belt caster. Results of casting experiments and material examination are shown as well as some advices given concerning safety and handling of liquid magnesium. (orig.)

International Nuclear Information System (INIS)

The theoretical hardness against total dose of the six-transistor SRAM cell is investigated in detail. An explicit analytical expression of the maximum tolerable threshold voltage shift is derived for two cross-coupled inverters. A numerical method is used to explore the hardness of the read and write operations. Both N- and P-channel access transistors designs are considered and their respective advantages are compared. The study points out that the radiation hardness mainly relies on the technology. Results obtained with the very robust Gate-All-Around process are finally presented.

Energy Technology Data Exchange (ETDEWEB)

High interelectrode voltage peaks have been observed simultaneously with the emission of hard X-ray bursts from a flash X-ray tube. The magnitude of the voltage peaks may exceed twice the initial charging voltage. It has also been observed that the discharge emits bursts of X-and P-band microwaves radiation which are coincident with the emission of the hard X-ray bursts. The results indicate that the microwaves and X-rays have a common origin in discharge plasma movements and an acceleration model for electrons in the plasma is presented as one possible explanation of the observed phenomena.

CERN Document Server

CH Cygni is a symbiotic star consisting of an M giant and an accreting white dwarf, which is known to be a highly variable X-ray source with a complex, two-component, spectra. Here we report on two Suzaku observations of CH Cyg, taken in 2006 January and May, during which the system was seen to be in a soft X-ray bright, hard X-ray faint state. Based on the extraordinary strength of the 6.4 keV fluorescent Fe K-alpha line, we show that the hard X-rays observed with Suzaku are dominated by scattering.

International Nuclear Information System (INIS)

... base alloys alloys beams chemical reactions elements hardness irradiation

Energy Technology Data Exchange (ETDEWEB)

Counter-current regeneration of 2-stage sodium zeolite softeners has been employed in reducing hardness leakage level of steamflooding water to less than 1 ppm when raw water contains as much as 5,000 ppm of the total dissolved solids. Hardness leakage is caused by sodium displacement of calcium and magnesium from the bottom of the exchanger bed. This study presents nomographs providing for rapid calculations to be made, for which a convenient operational mode does not already exist. The nomographs relate the hardness leakage as a function of salt quality and influent water quality and present solutions for predicting the leakage level, salt quality requirement or the treatability of raw water required for steamflooding projects.

UK PubMed Central (United Kingdom)

BackgroundThe ongoing epidemiological transition in Mexico minimizes the relative impact of neurocysticercosis (NC) on public health. However, hard data on the disease frequency...Full Text Available

Science.gov (United States)

Oct 30, 2009... of Belgian sheepherding dogs that are popular with the police and military. ... "She was a hard-working K-9 and she will be missed." ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

Energy Technology Data Exchange (ETDEWEB)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

International Nuclear Information System (INIS)

We study the one-phase Stefan problem on a semi-infinite strip x> or =0, with the convective boundary condition -KT/sub x/(0,t) = h[T/sub L/--T(0,t)]. Points of intrest include: a) behavior of the surface temperature T(0,t); b) asymptotic behavior as h#->#infinity; c) uniqueness, and d) bounds on the phase change front and total system energy.

Energy Technology Data Exchange (ETDEWEB)

Lithium (Li) plating-stripping reaction properties at the lithium phosphorus oxynitride glass electrolyte (LiPON)/copper thin film (Cu) interface is improved by the insertion of nano-thickness platinum (Pt) layer at the interface. The LiPON films are formed on mirror-polished lithium-ion conductive solid electrolyte sheets, and current collector thin films of Li, Cu-Pt multi layer, and Cu are formed on the LiPON films. The plating-stripping reactions at the LiPON/current collector films interface are carried out by galvanostatic and potential sweep measurements. Galvanostatic measurements reveal that Pt layer insertion reduces the overvoltage of the reaction and improves its coulomb efficiency. Also, cyclic voltammetry measurement suggests formation of Li-Pt alloys at higher voltages than 0 V (vs. Li/Li{sup +}) during the lithium plating process. Scanning electron microscopy observation clarifies that platinum insertion moderate non-uniform ...

Science.gov (United States)

The achievement of inner-shell photoionization of Zn-like Pd by means of two exploding foils is described. This resulted in the soft X-ray transition 3d94s2-3d104p at 46 A. It is shown that the photoionization of inner shell electrons in highly stripped ions can lead to X-ray transitions which may be candidates for X-ray lasers under 50 A.

Energy Technology Data Exchange (ETDEWEB)

Activities and results are reported of a project to investigate the application of remote sensing technology developed for the LACIE, AgRISTARS, Forestry and other NASA remote sensing projects for the environmental monitoring of strip mining, industrial pollution, and acid rain. Following a remote sensing workshop for EPA personnel, the EOD clustering algorithm CLASSY was selected for evaluation by EPA as a possible candidate technology. LANDSAT data acquired for a North Dakota test sight was clustered in order to compare CLASSY with other algorithms.

Energy Technology Data Exchange (ETDEWEB)

The objectives of this report are: to demonstrate complete CSSX process flowsheet (proof of concept)--decontamination factor {ge} 40,000, and concentration factor {approx}15; Scientific and technical issues evaluated--stage efficiency, temperature control, hydraulic performance, long time (multi-day) operation, short-term shutdown, effect of solids, and recovery from Cs moving through strip section.

Energy Technology Data Exchange (ETDEWEB)

Collisional-Radiative numerical models are commonly used to design or interpret experiments in atomic physics of laser-created plasmas, including X-ray laser studies. We describe our new code containing several options: average ion, more or less detailed configurations. It consists of an atomic data base coupled to subroutines evaluating ionic populations and emission and absorption coefficients. Numerical results are given to illustrate the capabilities of the code and to compare different models and types of approximation.

Energy Technology Data Exchange (ETDEWEB)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Energy Technology Data Exchange (ETDEWEB)

The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.

Science.gov (United States)

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

International Nuclear Information System (INIS)

The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society

International Nuclear Information System (INIS)

The structure and properties of composite powder coatings on the base of titanium carbide are studied. It is shown the electron-beam welding deposition of powders on the base of nickel and titanium carbide allows to produce of high-quality wear-resistant coatings which superior in density and hardness compared with sputtered ones. Changes of hardening phase volume percentage as well as composition of metal matrix make possible to control coatings hardness

International Nuclear Information System (INIS)

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

Science.gov (United States)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

International Nuclear Information System (INIS)

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

Science.gov (United States)

ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...

Energy Technology Data Exchange (ETDEWEB)

In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...

Science.gov (United States)

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

Energy Technology Data Exchange (ETDEWEB)

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

Energy Technology Data Exchange (ETDEWEB)

A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

Energy Technology Data Exchange (ETDEWEB)

Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).

Science.gov (United States)

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

CERN Document Server

We explore the relationship between the hard X-ray photon index $\\Gamma$ and the Eddington ratio (\\xi=L_{X}(0.5-25 keV)/L_{Edd}) in six XRBs. We find that different XRBs follow different anti-correlations between $\\Gamma$ and $\\xi$ when $\\xi$ is less than a critical value, while they follow the same positive correlation when $\\xi$ is larger than the critical value. This anti-correlation and positive correlation are also found in LLAGNs and QSOs respectively, and the anti-correlation and positive correlation of different XRBs roughly converge to the same point ($\\log \\xi=-2.1, \\Gamma=1.5$), which may correspond to the accretion mode transition, since that the anti-correlation and positive correlation are consistent with the prediction of ADAFs and standard disk/corona system respectively. The traditional low/hard state are divided into two parts by the cross point $\\log \\xi\\sim-2.1$, i.e., faint-hard state in the ...

CERN Document Server

Context: The colliding-wind binary Eta Car exhibits soft X-ray thermal emission that varies strongly around periastron, and non-thermal emission seen in hard X-rays and gamma-rays. Aims: To definitively identify Eta Car as the source of the hard X-ray emission, to examine how changes in the 2-10 keV band influence changes in the hard X-ray band, and to understand more clearly the mechanisms producing the non-thermal emission using new INTEGRAL observations obtained close to periastron. Methods: A Chandra observation encompassing the ISGRI error circle was analysed, and all other soft X-ray sources (including the outer shell of Eta Car itself) were discarded as likely counter-parts. New hard X-ray images of Eta Car were studied close to periastron, and compared to previous observations far from periastron. Results: The INTEGRAL component, when represented by a power law (with a photon index of 1.8), ...

Energy Technology Data Exchange (ETDEWEB)

Theoretical x-ray transition energies, lifetimes and partial multiplet fluorescence yields are presented for all spectroscopic terms of electron configurations with a single K-shell vacancy and varying number of electrons in the L-shell and M/sub 1/-subshell for multiply-ionized silicon. 9 tables.

International Nuclear Information System (INIS)

The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed

Science.gov (United States)

Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

International Nuclear Information System (INIS)

A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.

International Nuclear Information System (INIS)

The recently observed phenomenon of boron uphill diffusion during low-temperature annealing of ultrashallow ion-implanted junctions in silicon has been investigated. It is shown that the effect is enhanced by preamorphization, and that an increase in the depth of the preamorphized layer reduces uphill diffusion in the high-concentration portion of boron profile, while increasing transient enhanced diffusion in the tail. The data demonstrate that the magnitude of the uphill diffusion effect is determined by the proximity of boron and implant damage to the silicon surface.

Energy Technology Data Exchange (ETDEWEB)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

Energy Technology Data Exchange (ETDEWEB)

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

International Nuclear Information System (INIS)

In this paper, we report the systematic investigation on the melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon (a-Si) gates on ultrathin gate oxides. LTP is used to reduce the gate depletion effect in advanced semiconductor devices. The influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si is studied using in situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry. The results from TRR measurements indicate the presence of a buried melt for a-Si implanted with B"+ at a subamorphizing dose. In contrast, such a melt behavior is not observed during LTP of undoped a-Si and a-Si implanted with As"+ at an amorphizing dose. We attribute the marked difference in the melt characteristics to the competitive effects between compositional inhomogeneities and the extent of amorphization in the a-Si layer. It should be ...

International Nuclear Information System (INIS)

A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the ...

Energy Technology Data Exchange (ETDEWEB)

Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important ...

British Library Electronic Table of Contents (United Kingdom)

In the paper, the effect of Ni content, WC grain size and Mo2C addition on WC-6.25wt%TiC-9.3wt%Ni cemented carbide were investigated to improve the properties of Ni-bonded cemented carbides. The results show that the decrease of Ni content will result in the decrease of transverse rupture strength and increase of hardness; with the decrease of WC particle size, hardness increases due to the refinement of WC grains, however, the transverse rupture strength decrease due to the decrease of Ni binder thickness; Mo2C proves to be an effective grain growth inhibitor. With the increase of Mo2C content, the WC grains are refined and the hardness and transverse rupture strength are improved. Generally, when the Ni content is decreased to 8.4wt%, 13.45mm WC is used and 1.2wt% Mo2C is added, a higher...

International Nuclear Information System (INIS)

A study of the influence of the concentration of secondary addition, high concentrations of primary dopant, diffusion enhancer and stabilizer on radiation hardness is presented. It is concluded that the diffusion enhancing technique is the most powerful method for improving radiation hardness. A new polystyrene scintillator which contains 2% pT, 0.02% POPOP, 20% diffusion enhancer and 0.02% stabilizer gave 91% of initial light output immediately after 3 Mrad irradiation in air. Data are presented that show that scintillator prepared from commercial polymer is more radiation-hard and has greater light output than scintillator prepared from monomer. It is assumed that this difference is due to different molecular weight distributions. Some protocols for acceleration of aging (yellowing and crazing) are presented. It is shown that one of the main reasons for aging of plastic scintillators is residual monomer. 10 refs., 18 ...

Energy Technology Data Exchange (ETDEWEB)

Molecular dynamics simulations have been carried out of the radial distribution function of the hard sphere fluid for a range of densities in the equilibrium fluid and just into the metastable region. The first derivative of the hard-sphere radial distribution function at contact was computed and its density dependence fitted to a simple analytic form. Comparisons were made with semi-empirical formulae from the literature, and of these the formula proposed by Tao et al (1992 Phys. Rev. A 46 8007) was found to be in best agreement with the simulation data, although it slightly underestimates the derivative at the higher packing fractions in excess of about 0.45. Close to contact, within a few per cent of the particle diameter, the radial distribution function can be represented well by a second order polynomial. An exponential function, which has some useful analytic features, can also be applied in this region.

International Nuclear Information System (INIS)

The introduction of tolerance to radiation (''radiation-hardness'') into large electronic systems is one of the major tasks to which this Handbook will be put. The practices recommended here for inculcating radiation-tolerance in equipment require advanced physical modeling techniques, precise engineering procedures, and firm assurance procedures. The degree to which these procedures should be used in an equipment project can be measured by the severity of the raw radiation environment, the desired reliability of the system, and the requirement of that project for radiation-sensitive technologies. The balance of device/circuit design versus shielding will depend on whether the radiation is highly penetrating -- as in isotope handling or military environments -- or readily attenuated, as in space. In this chapter the authors have attempted to summarize the essential features of the radiation hardening of large assemblies of equipment and how effective control of ...

International Nuclear Information System (INIS)

Leptonic pair production on nuclei ad EMC-effect are discussed within the frames of the flucton model with scaling distortion. Cumulative production of direct photons and leptonic pairs as a test of the model of hard collisions is considered. The results of calculations of massive leptonic pair production cross sections on nucleus fluctons, caculations of the ratio of deuterium and iron structural functions, cross sections of direct photon production on sup(181)Ta nuclei at Esub(p)=400 GeV and cross section of #pi#-meson production in the model of hard collisions are presented. Experimental discovery of direct cumulative photons is concluded to be important for understanding the mechanism of parton hard scattering from nucleus fluctons.

British Library Electronic Table of Contents (United Kingdom)

An extremely sensitive stripping voltammetric procedure for ultra-trace determination of iridium(III) is reported. The method is based on the interfacial accumulation of the iridium(III)-CTAB complex onto the glassy carbon electrode, followed by the catalytic reduction of the adsorbed complex in the presence of bromate. 0.3molL^-^1 acetate buffer pH 4.7+6.9x10^-^2molL^-^1 NaBrO3+2.7x10^-^5molL^-^1 cetyltrimethylammonium bromide (CTAB)+0.2molL^-^1 KCl was employed as the supporting electrolyte. The analytical procedure was verified by the analysis of the standard reference materials: Sea Water BCR-CRM 403 and Fresh Water NIST-SRM 1643d. The accuracy, expressed as relative error e%, was satisfactory, being lower than 6%, while precision as repeatability, expressed as relative standard deviat...

CERN Document Server

The front-end electronics system for the anode signals of the CMS Endcap Muon cathode strip chambers has about 183000 channels. The purposes of the anode front-end electronics are to acquire precise muon timing information for bunch crossing number identification at the Level-1 muon trigger system and to provide a coarse radial position of the muon track. Each anode channel consists of an input protection network, amplifier, shaper, constant-fraction discriminator, and a programmable delay. The essential parts of the electronics include a 16-channel amplifier-shaper-discriminator ASIC CMP16 and a 16-channel ASIC D16G providing programmable time delay. The ASIC CMP16 was optimized for the large cathode chamber size (up to 3 x 2.5 m2) and for the large input capacitance (up to 200 pf). The ASIC combines low power consumption (30 mW/channel) with good time resolution (2 - 3 ns). The del ay ASIC D16G makes possible the alignment of signals with an accuracy of 2.2 ns. ...

Energy Technology Data Exchange (ETDEWEB)

A car-borne NaI(Tl) spectrometric system was used together with a {sup 137}Cs source to obtain realistic data in the search for unshielded and semi-shielded orphan sources. The potassium-stripped counts (PSC) method was used to estimate the influence by the shielding on the detection ability. A reduction of about 5% in the critical distance was obtained for the semi-shielded source. A curve fitting method was also developed and evaluated. Results from the curve fitting method showed inferior ability to find the source compared to the PSC method. However, it can be a useful complementary tool, for characterisation of the source shielding, and estimation of the distance from the road.

Science.gov (United States)

The ionization, excitation, and radiative recombination rates for highly stripped ions are cal- culated with Maxwellian and non-Maxwellian electron distribution functions of the type Cmexp(-vm/wm) (2<=m<=5) as encountered in laser-heated plasmas and certain types of turbulent plasmas. The direct-radiative-recombination rates are found to decrease by at most 30% as m is increased from 2 to 5. On the other hand, the ionization and excitation rates are found to be strongly reduced if the transition energy ? exceeds twice the local temperature kBTe. The effect of this on the distribution of energy levels and degrees of ionization in laser-produced plasmas could be important.

CERN Document Server

A surface may provide a useful pumping action when able to retain adsorbed gas molecules for the duration of a given experiment. To fulfil this condition at room temperature, strong binding forces, as those resulting from chemical reactions, are required. Materials able to react with gases to form stable chemical compounds are called getters. The two main families of getters (evaporable and non-evaporable, or NEG) are presented and discussed. Special emphasis is placed on the NEG strips currently used for the vacuum systems of particle accelerators, and on the newly developed NEG thin-film coatings, in view of their possible future applications.

CERN Document Server

Globular clusters are found usually in galaxies and they are an excellent tracer of dark matter. Long ago it was suggested that there may exist intracluster globular clusters (IGCs) bound to a galaxy cluster rather than to any single galaxy. Here we present a map showing the large scale distribution of globular clusters over the entire Virgo cluster. It shows that IGCs are found out to 5 million light years from the Virgo center, and that they are concentrated in several substructures much larger than galaxies. These objects might have been mostly stripped off from low-mass dwarf galaxies.

Energy Technology Data Exchange (ETDEWEB)

Case studies are presented for treatment of refinery wastes in a pilot-scale thin-film evaporator, the removal of volatiles from industrial wastewater for two steam strippers, and the removal of semivolatiles from water by steam stripping followed by liquid-phase carbon adsorption. The report provides data on removal efficiency, air emissions, process residuals, treatment costs, and process limitations. Details on sampling and analytical procedures, quality assurance, and process data are contained in the Appendixes (Volume II).

Energy Technology Data Exchange (ETDEWEB)

The objective of this work is to improve the process for CO{sub 2} capture by alkanolamine absorption/stripping by developing an alternative solvent, aqueous K{sub 2}CO{sub 3} promoted by piperazine. Progress has been made in this reporting period on three subtasks. A simple thermodynamic model has been developed to represent the CO{sub 2} vapor pressure and speciation of the new solvent. A rate model has been formulated to predict the CO{sub 2} flux with these solutions under absorber conditions. A process and instrumentation diagram and process flow diagram have been prepared for modifications of the existing pilot plant system.

Energy Technology Data Exchange (ETDEWEB)

Investigations of superdense compression touch on such problems as ultrahigh-frequency oscillations of matter in the generation of gravitational waves, the powerful pumping of hard coherent radiation, and the laboratory simulation of stellar interiors. This paper reviews the theory of supercompression and discusses some experiments involving multifoil collision supercompression.

UK PubMed Central (United Kingdom)

ObjectiveTo implement a role-reversal exercise to increase first-year pharmacy students' awareness of communication barriers in the health care setting, especially for deaf and hard-of-hearing...Full Text Available

International Nuclear Information System (INIS)

ASTROSAT, India's first dedicated astronomy satellite is slated for launch in 2007. The primary science objective of ASTROSAT is to explore the Universe using broad-band instruments covering optical, UV, soft X-ray and hard X-ray studies

UK PubMed Central (United Kingdom)

BackgroundIn Trinidad and Tobago, the law on the mandatory use of seat belts was passed in 1995, but this law is hardly enforced. The objective of this study was to determine the...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

Ultra fine tungsten carbide and cobalt powders were milled by high energy planetary ball mill at different ball to powder weight ratios (BPR) to produce particles of WC-10wt%Co hard metal in nanometer scale size. Microstructural characterizations by TEM show that the particle size of tungsten carbide was achieved to 32nm after milling at 15 BPR during 10h. In order to reduce the WC grain growth during the sintering process, tantalum carbide was added to the hard metal as a WC grain growth inhibitor. The nano hard metal powders were compacted at 200MPa pressure and sintered at 1370-1450degreeC temperatures in a high purity hydrogen atmosphere. The results show that the addition of 0.6wt% of TaC improves the hardness and fracture toughness from 1493 HV30 and 11.8MPam (for TaC free sample) to...

UK PubMed Central (United Kingdom)

Constraint-based lexical models of language processing assume that readers resolve temporary ambiguities by relying on a variety of cues, including particular knowledge of how verbs combine...Full Text Available

International Nuclear Information System (INIS)

The methods of surface modification of Ti-Zr alloy by laser treatment are considered. Characteristics of laser modification without- and with surface melting and with melting in different gaseous environments and with nickel microalloying are presented. Maximum depth, hardness and corrosion resistance are observed under nickel laser alloying.

International Nuclear Information System (INIS)

Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785degC up to a fluence of 5.2 x 10"2"4 n/m"2. The hardness was increased by up to 51% in AlN and 84% in SiC. The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200 #approx# 1,400degC annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400degC annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence ...

UK PubMed Central (United Kingdom)

Plant surfaces covered with crystalline epicuticular waxes are known to be anti-adhesive, hardly wettable and preventing insect attachment. But there are insects that are capable of gluing their eggs...Full Text Available

UK PubMed Central (United Kingdom)

Previous ultrasound elasticity imaging experiments supported a generally accepted concept that the hardness of deep venous thrombi increases with thrombus aging. Results also showed that this...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Deposition of hard coatings may influence the mechanical properties of the bulk material and its corrosion resistance. In this work we study the hardness of the coated and the back side of 100Cr6 steel plates. Electrochemical corrosion tests were performed in O{sub 2}-saturated acetate buffer of pH 5.6 at 25degC. Chromium nitride and titanium nitride coatings prepared by different physical vapour deposition processes, such as arc, thermionic arc evaporation, magnetron sputtering and ion-beam-assisted deposition (IBAD) were compared. The results show that, for sufficient corrosion protection, chromium nitride layers have to be thicker than 500 nm. An increased nitrogen partial pressure in the evaporation chamber of the IBAD process improves the corrosion resistance significantly. The hardness of the substrates was reduced in the case of thermoionic arc evaporation only, indicating a deposition temperature of more than ...

Energy Technology Data Exchange (ETDEWEB)

The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...

Science.gov (United States)

In 1977 and 1978, workers at Idaho National Engineering Laboratory (INEL) developed and tested a process for the regeneration and reuse of silver mordenite, AgZ, used to trap iodine from the dissolver off-gas stream of a nuclear fuel reprocessing plant. We were requested by the Airborne Waste Management Program Office of the Department of Energy to perform a confirmatory recycle study using repeated loadings at about 150/sup 0/C with elemental iodine, each followed by a drying step at 300/sup 0/C, then by iodine removal using elemental hydrogen at 500/sup 0/C. The results of our study show that AgZ can be recycled. There was considerable difficulty in stripping the iodine at 500/sup 0/C.; however, this step went reasonably well at 550/sup 0/C or slightly higher, with no apparent loss in the iodine-loading capacity of the AgZ. Large releases of elemental iodine occurred during the drying stage and the early part of the stripping stage. Lead ...

Energy Technology Data Exchange (ETDEWEB)

Laser surface alloying with gaseous nitrogen was utilized to improve the wear resistance of a Ti-6Al-4V alloy. Wear-resistant composite coatings reinforced by hard TiN dendrites were produced 'in-situ' on a substrate of a Ti-6Al-4V alloy. The hardness and wear resistance of the laser alloyed coating under two-body abrasive and block-on-ring full-sliding wear conditions were significantly enhanced. (orig.)

Energy Technology Data Exchange (ETDEWEB)

A flow field and particle trajectory in a HDD (Hard Disk Drive) between two rotating disks in axisymmetric enclosures is investigated using CFD code FLUENT/UNS. The RNG k-{epsilon} model is used as a turbulent model. In this study, the flow field between two disks are symmetric, and the flow field near the enclosure is very complex. Cross stream vectors are shown both for blowing and no blowing from the hub. The larger a particle, the more fast the particle deposits at the walls. In the case of blowing from the hub, the more fast the particle deposits at the walls. (author). 9 refs., 12 figs., 1 tab.

International Nuclear Information System (INIS)

Wood-plastic combination (WPC) was produced by #gamma#-irradiation of persimmon impregnated with acrylonitrile and styrene. The hardness and strength of WPC obtained were higher than those of an unmodified wood. Thus, it was found that the WPC is suited for a head of golf club, because the Shore hardness value of WPC is 36% greater than that of unmodified wood. An impregnation method of monomers with some pigments could produce colored WPC without diminishing natural grain. Head of golf club could be manufactured from colored WPC in practice. (auhtor).

International Nuclear Information System (INIS)

Glow discharge plasma nitriding of AISI 304 austenitic stainless steel has been carried out for different processing time under optimum discharge conditions established by spectroscopic analysis. The treated samples were analysed by X-ray diffraction (XRD) to explore the changes induced in the crystallographic structure. The XRD pattern confirmed the formation of an expanded austenite phase (#gamma#_N) owing to incorporation of nitrogen as an interstitial solid solution in the iron lattice. A Vickers microhardness tester was used to evaluate the surface hardness as a function of indentation depth (#mu#m). The results showed clear evidence of surface changes with substantial increase in surface hardness.

International Nuclear Information System (INIS)

The distributions of the effective numbers of 6q-fluctons in the energy, momentum and distance to the center of mass of nucleus are studied. Many characteristics of these distributions are shown to be universal, i.e. independent of the flucton size. The saturation of the flucton density in A > 80 nuclei and other peculiarities are found, which define different behavior of the effective numbers of fluctons and deuterons. This fact provides an explanation of the known underestimate by a factor of 1.5-6 of the cross sections of hard inclusive (p, p'd) process on nuclei calculated in the quasi-elastic approximation.

Energy Technology Data Exchange (ETDEWEB)

The efficiency of NbC on WC grain coarsening in a WC-10wt.%Co hardmetal alloy was demonstrated by hardness measurement and WC granulation observation. The heterogeneous and overall grain growth were controlled. A low temperature experimentally produced NbC was used and compared to the inhibition potential of a commercial NbC powder. The results were the same in terms of structural fineness and hardness. The dispersion of the experimental NbC was not a problem, in spite of its size. The experimental NbC has very large particles, formed by agglomerates of small crystallites. During milling these agglomerates could be broken down. (orig.)

International Nuclear Information System (INIS)

The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy ...

British Library Electronic Table of Contents (United Kingdom)

In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

International Nuclear Information System (INIS)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

Science.gov (United States)

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

International Nuclear Information System (INIS)

More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992

International Nuclear Information System (INIS)

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

Energy Technology Data Exchange (ETDEWEB)

Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

Energy Technology Data Exchange (ETDEWEB)

New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)

Science.gov (United States)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

British Library Electronic Table of Contents (United Kingdom)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

Energy Technology Data Exchange (ETDEWEB)

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

Energy Technology Data Exchange (ETDEWEB)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

Science.gov (United States)

The PVSCAN is an instrument designed to characterize silicon solar cell materials and devices. It performs a host of measurements that yield spatial maps of dislocation density, grain distribution, reflectance, and photoresponses from near-junction and the bulk of a solar cell.

International Nuclear Information System (INIS)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences (#approx#10"1"2 cm"-"2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the #delta#-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping of ...

Energy Technology Data Exchange (ETDEWEB)

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; ...

Energy Technology Data Exchange (ETDEWEB)

Amorphous silicon solar cells have been shown to have efficiencies which degrade as a result of long exposure to light. Annealing such cells in air at a temperature of about 200.degree. C. for at least 30 minutes restores their efficiency.

Energy Technology Data Exchange (ETDEWEB)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} ...

Science.gov (United States)

twenty 350 V, 2.5 mF aluminum electrolytic capacitors with 10.8 mH inductors made of multi-strand wire. The PFN discharge was controlled using an silicon ...

Energy Technology Data Exchange (ETDEWEB)

The physicochemical nature of a silicoaluminophosphate with the faujasite structure has been studied. The molecular sieve framework contains a homogeneous distribution of silicon, aluminum, and phosphorus and is negatively charged. Combustion in air of the charge-compensating organic cations produces hydroxyl groups which exhibit Broensted acidity.

Energy Technology Data Exchange (ETDEWEB)

Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

Science.gov (United States)

... having high fluidity. The SC-51A alloy contains 4.5 to 5.5% silicon, 1 to 1.5% coppers .4 to .6% magnesium, o35% sine, .8% iron, .5% manganes*, ...