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A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

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An evaporative cooling system developed for operation and qualification testing of silicon pixel and microstrip detectors for the inner tracking detector of the CERN ATLAS spectrometer is described. Silicon detector substrates must be continuously operated between 0 and ???7?C in the high radiation environment near the circulating beams at the CERN Large Hadron Collider (LHC). This requirement imposes unusual constraints on the cooling system and has led to the choice of perfluoro-n-propane (C3F8) refrigerant, which combines good chemical stability under ionizing radiation with high dielectric strength and nonflammability. Since the silicon detectors must also be of extremely light construction to minimize undesirable physics background, coolant tubes are of thin (200 ?m) aluminum wall, wh...

KoreaScience (Korea)

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CERN Document Server

A new measurement of the cosmic ray antiproton-to-proton flux ratio between 1 and 100 GeV is presented. The results were obtained with the PAMELA experiment, which was launched into low-earth orbit on-board the Resurs-DK1 satellite on June 15th 2006. PAMELA is equipped with a silicon-microstrip magnetic spectrometer and a silicon-tungsten imaging calorimeter and has been collecting data since July 2006. During 500 days of data collection a total of about 1000 antiprotons have been identified, including 100 above an energy of 20 GeV. The high-energy results are a ten-fold improvement in statistics with respect to all previously published data. The antiproton-to-proton flux ratio increases smoothly with energy up to about 10 GeV, in agreement with previous experiments, and then levels off. The data follow the trend expected from secondary production calculations and significantly constrain contributions from exotic sources, e.g. dark matter ...

Energy Technology Data Exchange (ETDEWEB)

Ceramic ball bearings of silicon nitride are used for hard disk drive (HDD) spindle motors, to increase seed, reliability and memory capacity of the HDDs. Silicon nitride ceramics have advantages of lightweight, high strength and hardness over the conventional steel for bearings, but is expensive. A new process of high cost performance has been developed for mass production of the small-size ceramic balls. The company plans to apply these bearings to higher devices, e.g., servers, for the time being, and to expand the applicable areas, e.g., common devices and other small-size motors. The ceramic bearings have been developed jointly with Koyo Seiko Co. Ltd. (translated by NEDO)

KoreaScience (Korea)

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British Library Electronic Table of Contents (United Kingdom)

Magnetic properties of Fe-Co-Mo-Cu-B alloy system with Co up to 26at.% were investigated. After proper thermal treatment, the nanocrystalline grain remains tiny, the density hardly increases, but the room-temperature saturation attains 1.5T mainly due to a high enough Curie temperature. The generally observed slant hysteresis loops point to ribbon surfaces, which stress the ribbon interior and induce a specific magnetoelastic contribution to hard-ribbon-axis magnetic anisotropy even after vacuum annealing. The effect does not come from cobalt but rather from the lack of silicon. Partial removal of the surfaces resulted in a decrease of the loop tilt.

International Nuclear Information System (INIS)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

J-STORE (Japan)

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Silicon nitride based ceramics have attracted considerable attention as good candidates for structural applications due to their excellent mechanical properties including strength, hardness, fracture toughness, and high temperature strength. These properties are strongly influenced by grain size and morphology, and by the degree of crystallinity and chemistry of grain boundary phases. In this work, the microstructure of Si{sub 3}N{sub 4} densified with Nd{sub 2}O{sub 3}, Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} sintering additives was studied. Sintered samples were polished and plasma etched for microstructural analysis using scanning electron microscope. Quantitative evaluation of materials microstructure was accomplished using Quantikov software. Fracture toughness was measured by Vickers indentation method. The observed microstructure is typical of silicon nitride based materials and is characterized by high aspect ...

Energy Technology Data Exchange (ETDEWEB)

The Micro-strip Metal Foil Detectors (MMFD) designed and used for the Beam Profile Monitoring (BPM) are discussed. The results obtained for the MMFDs produced by different technologies are presented. The MMFD deposited onto the 20 {mu}m thick Si-wafer has been used for the BPM of the 32 MeV alpha-particle beam at the MPIfK (Heidelberg) Tandem generator. Another MMFD with totally removed Si-wafer at the working area has been applied for the on-line X-ray BPM at the HASYLAB (DESY). One may conclude that the developed technology of the micro-strip metal detector manufacturing allows to provide non-destructive measurement of X-ray intensity distribution over area of up to 50 mm{sup 2} with an accuracy of 10-20 {mu}m with a possibility of its improvement by a factor 5. A sub-micron position resolution is expected by applying electron lithography for the strip pattern production.

International Nuclear Information System (INIS)

SiAlONs are ceramics with high potential as biomaterials due to their chemical stability, associated with suitable mechanical properties, such as high fracture toughness and fracture resistance. The objective of this work was to investigate the mechanical properties and the cytotoxicity of these ceramic materials. Three different compositions were prepared, using silicon nitride, aluminum nitride and a rare earth oxide mixture as starting powders, yielding Si_3N_4-SiAlON composites or pure SiAlON ceramics, after hot-pressing at 1750 deg. C, for 30 min. The sintered samples were characterized by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). Furthermore, hardness and fracture toughness were determined using the Vicker's indentation method. The biological compatibility was evaluated by in vitro cytotoxicity tests. Ceramic with elevated hardness, ranging between 17 and 21 GPa, and high fracture ...

Energy Technology Data Exchange (ETDEWEB)

Ceramic antifriction bearings were introduced in excellent characterics and application. In main shaft use bearings of the machine tool, to be heightened in efficiency and accuracy by the heightening in speed, centrifugal load to the outer ring is not negligible to shorten the bearing in life. Also ball bearings with a contact angle are easily corroded by a very strong revolution slide due to the gyromoment. The use of such light weight material as silicon nitride's can design the lengthening in life. Also the utilization of high rigidity can prevent the inner ring from expanding by centrifugal force and enable the machining to be with a high accuracy. Ceramic rolling element is excellent also in backing resistant property and effective on the oily film cut. With heat resistant property, it maintains hardness even at high temperature. Such excellent characteristics being utilized, the fine ceramic antifriction bearing is used for the ...

International Nuclear Information System (INIS)

The condition for obtaining a calorimetric response linear with energy for hadronic showers and an energy resolution that improves as the incident energy increases is the equalization of the electromagnetic (e) and the hadronic (#pi#) signal responses. This equalization is obtained by exploiting a local hardening effect realized through the insertion of low-Z thin plates between the high-Z absorbers and the active material in a hadronic calorimeter with silicon readout. This effect, which allows the reduction of the calorimeter response to the electromagnetic component of the incoming hadronic showers, has been investigated for different low-Z materials. The relevance of some aspects of this study to the radiation hardness of the calorimeters is also addressed. (orig.).

International Nuclear Information System (INIS)

Full text. Here we present a status report of the Schenberg antenna, which started commissioning runs in September 2006 under the full support of FAPESP. In its first commissioning runs we tested three preliminary parametric transducer systems, which did not achieve a high enough performance for placing the antenna sensitivity in the range of the calibrator capacitor. Instead of improving the calibrator, making it capable of introducing a larger input force, we decided to go to a radical upgrading operation: replacing the three transducers for a complete set of six transducers, with better sensitivity and arranged according to the truncated icosahedron configuration, plus two extra ones; starting to install the dilution refrigerator; installing wires, cables, and amplifiers for the complete set of transducer circuits; and a new suspension and vibration isolation system for the cabling and microstrip antennas. We also have been developing a new set of transducers, ...

Science.gov (United States)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

Energy Technology Data Exchange (ETDEWEB)

AIM: To define the value of digital radiography with a clinical flat panel detector system for evaluation of wrist fractures in comparison with state of the art storage phosphor radiography. MATERIAL AND METHODS: Hard copy images of 26 fractured wrist specimens were acquired with the same exposure dose on a state of the art storage phosphor radiography system and a clinical flat panel detector. Image features like cortical bone surface, trabecular bone, soft tissues and fracture delineation were independently analysed by 4 observers using a standardised protocol. Image quality ratings were evaluated with an analysis of variance (ANOVA). RESULTS: Flat panel detector radiographs were rated superior with respect to cortical and trabecular bone representation as well as fracture evaluation, while storage phosphor radiographs produced better soft tissue detail. CONCLUSION: In some of the observed image quality aspects, the performance of caesium iodide/amorphous ...

International Nuclear Information System (INIS)

Textured silicon nitride (Si_3N_4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si_3N_4, with emphasis on the anisotropic and abnormal grain growth of #beta#-Si_3N_4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for #beta#-Si_3N_4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the ...

International Science & Technology Center (ISTC)

The Development of Basic Plasma-Chemical Technology for Manufacture of Low Cost Crystal Silicon for Solar Power Plants.

UK PubMed Central (United Kingdom)

The fatigue and fracture behavior of hard tissues are topics of considerable interest today. This special group of organic materials comprises the highly mineralized and load-bearing tissues...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

British Library Electronic Table of Contents (United Kingdom)

We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.

KoreaScience (Korea)

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Energy Technology Data Exchange (ETDEWEB)

A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

Science.gov (United States)

Aug 6, 2010 ... A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo ...

CERN Document Server

Deep donor states of muonium in silicon and germanium (status report exp SC81)

KoreaScience (Korea)

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International Nuclear Information System (INIS)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

Science.gov (United States)

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

International Nuclear Information System (INIS)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

UK PubMed Central (United Kingdom)

BackgroundThe hard clam, Mercenaria mercenaria, has been affected by severe mortality episodes associated with the protistan parasite QPX (Quahog Parasite Unknown)...Full Text Available

UK PubMed Central (United Kingdom)

The issue of beam-induced damage on diffractive hard X-ray optics is addressed. For this purpose a systematic study on the radiation damage induced by a high-power X-ray beam is carried out in both...Full Text Available

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...

International Nuclear Information System (INIS)

(Dec 1973). United States Tausch, HJ Antinone, RJ Bailey, RA Air Force

Energy Technology Data Exchange (ETDEWEB)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was ...

Energy Technology Data Exchange (ETDEWEB)

Arsenic and hydrogen ions produced from a mixture of arsine and hydrogen gas were implanted with a dose of 3 x 10{sup 15} As{sup +} ions/cm{sup 2} into silicon using an ion-shower implanter. The dominant ionic species implanted into the silicon were As{sub 2}H{sup +}, AsH{sup +}, H{sub 5}{sup +}, and H{sub 3}{sup +} ions. Arsenic atoms diffused into the silicon with large diffusion coefficients during annealing at 700 and 800 C. However, when the implanted silicon was annealed at 900 C, the arsenic atoms diffused into a deeper region in the silicon with a very small diffusion coefficient that was independent of concentration. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

Energy Technology Data Exchange (ETDEWEB)

A set of materials property data for potential wear resistant materials was collected. These materials are designated for use as the ''core'' materials in the Fibrous Monolith structure. The material properties of hardness, toughness, thermal conductivity and cost were selected as determining factors for material choice. Data for these four properties were normalized, and weighting factors were assigned for each property to establish priority and evaluate the effects of priority fluctuation. Materials were then given a score based on the normalized parameters and weighting values. Using the initial estimates for parameter priority, the highest ranking material was tungsten carbide, with diamond as the second ranked material. Several materials were included in the trade study, and five were selected as promising ''core'' materials to include in this effort. These materials are tungsten carbide, ...

Energy Technology Data Exchange (ETDEWEB)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

Science.gov (United States)

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

Science.gov (United States)

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

Energy Technology Data Exchange (ETDEWEB)

This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.

Science.gov (United States)

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

Science.gov (United States)

A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...

CERN Document Server

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

International Nuclear Information System (INIS)

Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

Energy Technology Data Exchange (ETDEWEB)

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

Science.gov (United States)

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

Energy Technology Data Exchange (ETDEWEB)

Supercritical CO2 is used as a new solvent for immersion deposition, a galvanic displacement process traditionally carried out in aqueous HF solutions containing metal ions, to selectively develop metal films on featured or non-featured silicon substrates. Components of supercritical fluid immersion deposition (SFID) solutions for fabricating Cu and Pd films on silicon substrates are described along with the corresponding experimental setup and procedure. Only silicon substrates exposed and reactive to SFID solutions can be coated. The highly pressurized and gas-like supercritical CO2, combined with the galvanic displacement property of immersion deposition, enables the SFID technique to selectively deposit metal films in small features. SFID may also provide a new method to fabricate palladium silicide in small features or to metallize porous silicon.

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

Energy Technology Data Exchange (ETDEWEB)

The peak flux relationship between hard X-rays and microwaves from solar flares is studied using about 400 events simultaneously recorded with the hard X-ray burst spectrometer on the SMM satellite and the Nobeyama 17 GHz radiometer. The data indicate that the hard X-ray and microwave peak fluxes correlate best for X-ray energies of less than about 80 keV for impulsive flares and greater than about 360 keV for extended flares. By postulating that electrons responsible for microwave emission at 17 GHz are those emitting hard X-rays at these photon energies, it is concluded that: (1) in impulsive flares, microwaves at about 20 GHz are emitted mainly by electrons of less than about 200 keV from a layer through which the electrons stream down into the thick-target hard X-ray source; and (2) in extended flares, microwaves are emitted mainly by MeV electrons trapped in a coronal loop or ...

International Nuclear Information System (INIS)

The major details of the inspection and replacement of the bearing journals on each of the four heat transport pumps (HTPs) at Wolsung nuclear generating station in Korea are presented in this paper. Investigation following fracture of one of the journals in 1985 revealed that it was excessively hard. The journal material (ASTM A296 CA 40) is considered to be prone to stress corrosion fatigue if the hardness exceeds Rc 40. In 1986 May, during a planned outage, the HTPs were disassembled, the journals were inspected, found to be excessively hard, and all were replaced. At the same time, the pump to motor couplings were all refurbished to ensure proper alignment.

International Nuclear Information System (INIS)

Hardness of beta-sialon with four different composition index values of 0.25, 0.50, 0.75 and 1.0 in the system Ni/sub 3/N/sub 4/-AlN-Al/sub 2/O/sub 3/ with the addition of 6% Y/sub 2/O/sub 3/ as sintering aid has been reported. These composition were pressureless sintered for 90, 180 and 270 min in nitrogen atmospheres at temperatures ranging from 1650 to 1800 deg. C. Highest hardness was achieved when the composition index was 0.25 was sintered for 270 minutes at 1750 deg. C. (author).

Science.gov (United States)

... of Hanoi or Missionaries and Cannibals, It is not immediately obvious what constitutes a "move"--that is, what actual manipulations of the physical ...

International Nuclear Information System (INIS)

Monolithic SiAlON ceramics are hard and brittle with little possibility for property design, but multi-phase SiAlON ceramics offer great scope for controlling microstructural development and desired properties. The ceramics can also be reinforced by separate additions of other hard, refractory compounds. The toughness in all these SiAlON composites can be increased by several mechanisms, and the best effect is reached if they are combined. When glassy phase is present, crack paths are affected by the strains caused by different thermal expansion of the glassy phase and the crystals and also by the interface properties. The crystal shape influence toughness, especially pronounced is the effect of the elongated #beta#- grains. Different toughening mechanisms are achieved by separately added reinforcement phases. The hardness is raised by the presence of #alpha# SiAlON and other hard constituents, such as ...

Science.gov (United States)

... interacting systems in which common-envelope evolutionary effects make it hard to generalize the results to single-star evolution, although they ...

UK PubMed Central (United Kingdom)

Necrotizing sialometaplasia, is a benign inflammatory lesion primarily involving the minor salivary glands of the hard palate. The lesion often presents itself as a deep-seated palatal ulcer with clinical...Full Text Available

International Nuclear Information System (INIS)

Turkish English ... Authors Sahin, O. (Suleyman Demirel University, Department of Physics, Isparta (Turkey))

DEFF Research Database (Denmark)

Interest in optics for hard X-ray broad-band application is growing. In this paper, we compare the hard X-ray (20-100 keV) reflectivity obtained with an energy-dispersive reflectometer, of a standard commercial gold thin-film with that of a 600 bilayer W/Si X-ray supermirror. The reflectivity of the multilayer is found to agree extraordinarily well with theory (assuming an interface roughness of 4.5 Angstrom), while the agreement for the gold film is less, The overall performance of the supermirror is superior to that of gold, extending the band of reflection at least a factor of 2.8 beyond that of the gold, Various other design options are discussed, and we conclude that continued interest in the X-ray supermirror for broad-band hard X-ray applications is warranted.

Energy Technology Data Exchange (ETDEWEB)

We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...

Energy Technology Data Exchange (ETDEWEB)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

International Nuclear Information System (INIS)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

Energy Technology Data Exchange (ETDEWEB)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Energy Technology Data Exchange (ETDEWEB)

The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.

Science.gov (United States)

Metallic contamination was monitored with Surface Photovoltage (SPV) technique in integrated circuit manufacturing facilities. Conventionally, Czochralski silicon bulk materials were used as monitor wafers. However, it has been observed that the diffusion length and the `Iron' concentration measured with SPV were inconsistent from run to run in one facility. The inconsistency is believed to be due to oxygen precipitate in silicon materials during the thermal cycle. By using low oxygen concentration or Float Zone wafers, metallic contaminants can be monitored more accurately and consistently.

International Nuclear Information System (INIS)

The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society

International Nuclear Information System (INIS)

The structure and properties of composite powder coatings on the base of titanium carbide are studied. It is shown the electron-beam welding deposition of powders on the base of nickel and titanium carbide allows to produce of high-quality wear-resistant coatings which superior in density and hardness compared with sputtered ones. Changes of hardening phase volume percentage as well as composition of metal matrix make possible to control coatings hardness

International Nuclear Information System (INIS)

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

Science.gov (United States)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

International Nuclear Information System (INIS)

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

Science.gov (United States)

ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...

Energy Technology Data Exchange (ETDEWEB)

In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...

Science.gov (United States)

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

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We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

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A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...

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We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

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Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).

Science.gov (United States)

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

CERN Document Server

We explore the relationship between the hard X-ray photon index $\\Gamma$ and the Eddington ratio (\\xi=L_{X}(0.5-25 keV)/L_{Edd}) in six XRBs. We find that different XRBs follow different anti-correlations between $\\Gamma$ and $\\xi$ when $\\xi$ is less than a critical value, while they follow the same positive correlation when $\\xi$ is larger than the critical value. This anti-correlation and positive correlation are also found in LLAGNs and QSOs respectively, and the anti-correlation and positive correlation of different XRBs roughly converge to the same point ($\\log \\xi=-2.1, \\Gamma=1.5$), which may correspond to the accretion mode transition, since that the anti-correlation and positive correlation are consistent with the prediction of ADAFs and standard disk/corona system respectively. The traditional low/hard state are divided into two parts by the cross point $\\log \\xi\\sim-2.1$, i.e., faint-hard state in the ...

CERN Document Server

Context: The colliding-wind binary Eta Car exhibits soft X-ray thermal emission that varies strongly around periastron, and non-thermal emission seen in hard X-rays and gamma-rays. Aims: To definitively identify Eta Car as the source of the hard X-ray emission, to examine how changes in the 2-10 keV band influence changes in the hard X-ray band, and to understand more clearly the mechanisms producing the non-thermal emission using new INTEGRAL observations obtained close to periastron. Methods: A Chandra observation encompassing the ISGRI error circle was analysed, and all other soft X-ray sources (including the outer shell of Eta Car itself) were discarded as likely counter-parts. New hard X-ray images of Eta Car were studied close to periastron, and compared to previous observations far from periastron. Results: The INTEGRAL component, when represented by a power law (with a photon index of 1.8), ...

Energy Technology Data Exchange (ETDEWEB)

Theoretical x-ray transition energies, lifetimes and partial multiplet fluorescence yields are presented for all spectroscopic terms of electron configurations with a single K-shell vacancy and varying number of electrons in the L-shell and M/sub 1/-subshell for multiply-ionized silicon. 9 tables.

International Nuclear Information System (INIS)

The transient enhanced diffusion in crystalline silicon implanted with dopants ad followed by high temperature annealing to activate the dopants is introduced. The physical mechanisms of transient enhanced dopant diffusion are then reviewed together with a short introduction to the proposed suppressing methods. Finally, the perspectives with using high energy heavy ions in this field are briefly discussed

Science.gov (United States)

Silicone-rubber washers function as damping and articulating elements in cast-aluminum spacers that separate bundle subconductors in each phase of extra-high-voltage transmission lines. Spacer/dampers are located every 3 ft. along transmission lines on Canada's first operational 500 and 735 kV system.

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

International Nuclear Information System (INIS)

A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.

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The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.

Energy Technology Data Exchange (ETDEWEB)

A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

International Nuclear Information System (INIS)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

International Nuclear Information System (INIS)

In order to investigate the systematics of the loop expansion in high temperature gauge theories beyond the leading order hard thermal loop (HTL) approximation, we calculate the two-loop electron proper self-energy #SIGMA# in high temperature QED. The two-loop bubble diagram of #SIGMA# contains a linear infrared divergence. Even if regulated with a nonzero photon mass M of order of the Debye mass, this infrared sensitivity implies that the two-loop self-energy contributes terms to the fermion dispersion relation that are comparable to or even larger than the next-to-leading order (NLO) contributions of the one-loop #SIGMA#. Additional evidence for the necessity of a systematic restructuring of the loop expansion comes from the explicit gauge-parameter dependence of the fermion damping rate at both one and two loops. The leading terms in the high temperature expansion of the two-loop self-energy for all topologies arise from an explicit ...

Energy Technology Data Exchange (ETDEWEB)

Tensile specimens 60 ..mu..m thick of Ni-8 at. % Si have been bombarded at 475/sup 0/C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700/sup 0/C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no ...

British Library Electronic Table of Contents (United Kingdom)

Heat inactivated Aspergillus ustus (Asp), silicon dioxide-nano-powder (N Si), and silicon dioxide nano-powder-combined-heat inactivated Aspergillus ustus (N Si Asp) were used to study the biosorption of Cd(II) from aqueous solutions via batch equilibrium technique. Surface characterization and immobilization of the fungal cells on silicon dioxide-nano-powder were examined and confirmed by using FT-IR and ESM analysis. Cadmium biosorption processes were investigated under the effect of pH, contact time, sorbent dosage and initial metal concentration. The three examined sorbents were found to exhibit maximum mmolg^-^1 capacity values in pH 7.0. The maximum determined cadmium capacity by silicon dioxide-nano-powder (N Si) (600mmolg^-^1) was found higher than that exhibited by the heat inactiv...

CERN Document Server

The CMS detector (Compact Muon Solenoid) is under construction at one of the four proton-proton interaction points of the LHC (Large Hadron Collider) at CERN, the European Organization for Nuclear Research (Geneva, Switzerland). The inner tracking system of the CMS experiment consisting of silicon detectors will have a diameter of 2.4 m and a length of 5.4 m representing the largest silicon tracker ever. About 15000 silicon strip modules create an active silicon area of 200 m2 to detect charged particles from proton collisions. They are placed on a rigid carbon fibre structure, providing stability within the working conditions of a 4 T solenoid magnetic field at ?10oC. Knowledge of the position of the silicon detectors at the level of 100 ?m is needed for an efficient pattern recognition of charged particle tracks. Metrology methods are used to survey tracker subdetectors and the ...

British Library Electronic Table of Contents (United Kingdom)

In the paper, the effect of Ni content, WC grain size and Mo2C addition on WC-6.25wt%TiC-9.3wt%Ni cemented carbide were investigated to improve the properties of Ni-bonded cemented carbides. The results show that the decrease of Ni content will result in the decrease of transverse rupture strength and increase of hardness; with the decrease of WC particle size, hardness increases due to the refinement of WC grains, however, the transverse rupture strength decrease due to the decrease of Ni binder thickness; Mo2C proves to be an effective grain growth inhibitor. With the increase of Mo2C content, the WC grains are refined and the hardness and transverse rupture strength are improved. Generally, when the Ni content is decreased to 8.4wt%, 13.45mm WC is used and 1.2wt% Mo2C is added, a higher...

International Nuclear Information System (INIS)

A study of the influence of the concentration of secondary addition, high concentrations of primary dopant, diffusion enhancer and stabilizer on radiation hardness is presented. It is concluded that the diffusion enhancing technique is the most powerful method for improving radiation hardness. A new polystyrene scintillator which contains 2% pT, 0.02% POPOP, 20% diffusion enhancer and 0.02% stabilizer gave 91% of initial light output immediately after 3 Mrad irradiation in air. Data are presented that show that scintillator prepared from commercial polymer is more radiation-hard and has greater light output than scintillator prepared from monomer. It is assumed that this difference is due to different molecular weight distributions. Some protocols for acceleration of aging (yellowing and crazing) are presented. It is shown that one of the main reasons for aging of plastic scintillators is residual monomer. 10 refs., 18 ...

Energy Technology Data Exchange (ETDEWEB)

Molecular dynamics simulations have been carried out of the radial distribution function of the hard sphere fluid for a range of densities in the equilibrium fluid and just into the metastable region. The first derivative of the hard-sphere radial distribution function at contact was computed and its density dependence fitted to a simple analytic form. Comparisons were made with semi-empirical formulae from the literature, and of these the formula proposed by Tao et al (1992 Phys. Rev. A 46 8007) was found to be in best agreement with the simulation data, although it slightly underestimates the derivative at the higher packing fractions in excess of about 0.45. Close to contact, within a few per cent of the particle diameter, the radial distribution function can be represented well by a second order polynomial. An exponential function, which has some useful analytic features, can also be applied in this region.

International Nuclear Information System (INIS)

The introduction of tolerance to radiation (''radiation-hardness'') into large electronic systems is one of the major tasks to which this Handbook will be put. The practices recommended here for inculcating radiation-tolerance in equipment require advanced physical modeling techniques, precise engineering procedures, and firm assurance procedures. The degree to which these procedures should be used in an equipment project can be measured by the severity of the raw radiation environment, the desired reliability of the system, and the requirement of that project for radiation-sensitive technologies. The balance of device/circuit design versus shielding will depend on whether the radiation is highly penetrating -- as in isotope handling or military environments -- or readily attenuated, as in space. In this chapter the authors have attempted to summarize the essential features of the radiation hardening of large assemblies of equipment and how effective control of ...

International Nuclear Information System (INIS)

Leptonic pair production on nuclei ad EMC-effect are discussed within the frames of the flucton model with scaling distortion. Cumulative production of direct photons and leptonic pairs as a test of the model of hard collisions is considered. The results of calculations of massive leptonic pair production cross sections on nucleus fluctons, caculations of the ratio of deuterium and iron structural functions, cross sections of direct photon production on sup(181)Ta nuclei at Esub(p)=400 GeV and cross section of #pi#-meson production in the model of hard collisions are presented. Experimental discovery of direct cumulative photons is concluded to be important for understanding the mechanism of parton hard scattering from nucleus fluctons.

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Investigations of superdense compression touch on such problems as ultrahigh-frequency oscillations of matter in the generation of gravitational waves, the powerful pumping of hard coherent radiation, and the laboratory simulation of stellar interiors. This paper reviews the theory of supercompression and discusses some experiments involving multifoil collision supercompression.

UK PubMed Central (United Kingdom)

ObjectiveTo implement a role-reversal exercise to increase first-year pharmacy students' awareness of communication barriers in the health care setting, especially for deaf and hard-of-hearing...Full Text Available

International Nuclear Information System (INIS)

ASTROSAT, India's first dedicated astronomy satellite is slated for launch in 2007. The primary science objective of ASTROSAT is to explore the Universe using broad-band instruments covering optical, UV, soft X-ray and hard X-ray studies

UK PubMed Central (United Kingdom)

BackgroundIn Trinidad and Tobago, the law on the mandatory use of seat belts was passed in 1995, but this law is hardly enforced. The objective of this study was to determine the...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

Ultra fine tungsten carbide and cobalt powders were milled by high energy planetary ball mill at different ball to powder weight ratios (BPR) to produce particles of WC-10wt%Co hard metal in nanometer scale size. Microstructural characterizations by TEM show that the particle size of tungsten carbide was achieved to 32nm after milling at 15 BPR during 10h. In order to reduce the WC grain growth during the sintering process, tantalum carbide was added to the hard metal as a WC grain growth inhibitor. The nano hard metal powders were compacted at 200MPa pressure and sintered at 1370-1450degreeC temperatures in a high purity hydrogen atmosphere. The results show that the addition of 0.6wt% of TaC improves the hardness and fracture toughness from 1493 HV30 and 11.8MPam (for TaC free sample) to...

UK PubMed Central (United Kingdom)

Constraint-based lexical models of language processing assume that readers resolve temporary ambiguities by relying on a variety of cues, including particular knowledge of how verbs combine...Full Text Available

International Nuclear Information System (INIS)

The methods of surface modification of Ti-Zr alloy by laser treatment are considered. Characteristics of laser modification without- and with surface melting and with melting in different gaseous environments and with nickel microalloying are presented. Maximum depth, hardness and corrosion resistance are observed under nickel laser alloying.

International Nuclear Information System (INIS)

Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785degC up to a fluence of 5.2 x 10"2"4 n/m"2. The hardness was increased by up to 51% in AlN and 84% in SiC. The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200 #approx# 1,400degC annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400degC annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence ...

UK PubMed Central (United Kingdom)

Plant surfaces covered with crystalline epicuticular waxes are known to be anti-adhesive, hardly wettable and preventing insect attachment. But there are insects that are capable of gluing their eggs...Full Text Available

UK PubMed Central (United Kingdom)

Previous ultrasound elasticity imaging experiments supported a generally accepted concept that the hardness of deep venous thrombi increases with thrombus aging. Results also showed that this...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Deposition of hard coatings may influence the mechanical properties of the bulk material and its corrosion resistance. In this work we study the hardness of the coated and the back side of 100Cr6 steel plates. Electrochemical corrosion tests were performed in O{sub 2}-saturated acetate buffer of pH 5.6 at 25degC. Chromium nitride and titanium nitride coatings prepared by different physical vapour deposition processes, such as arc, thermionic arc evaporation, magnetron sputtering and ion-beam-assisted deposition (IBAD) were compared. The results show that, for sufficient corrosion protection, chromium nitride layers have to be thicker than 500 nm. An increased nitrogen partial pressure in the evaporation chamber of the IBAD process improves the corrosion resistance significantly. The hardness of the substrates was reduced in the case of thermoionic arc evaporation only, indicating a deposition temperature of more than ...

Energy Technology Data Exchange (ETDEWEB)

The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...

Energy Technology Data Exchange (ETDEWEB)

Laser surface alloying with gaseous nitrogen was utilized to improve the wear resistance of a Ti-6Al-4V alloy. Wear-resistant composite coatings reinforced by hard TiN dendrites were produced 'in-situ' on a substrate of a Ti-6Al-4V alloy. The hardness and wear resistance of the laser alloyed coating under two-body abrasive and block-on-ring full-sliding wear conditions were significantly enhanced. (orig.)

Energy Technology Data Exchange (ETDEWEB)

A flow field and particle trajectory in a HDD (Hard Disk Drive) between two rotating disks in axisymmetric enclosures is investigated using CFD code FLUENT/UNS. The RNG k-{epsilon} model is used as a turbulent model. In this study, the flow field between two disks are symmetric, and the flow field near the enclosure is very complex. Cross stream vectors are shown both for blowing and no blowing from the hub. The larger a particle, the more fast the particle deposits at the walls. In the case of blowing from the hub, the more fast the particle deposits at the walls. (author). 9 refs., 12 figs., 1 tab.

International Nuclear Information System (INIS)

Wood-plastic combination (WPC) was produced by #gamma#-irradiation of persimmon impregnated with acrylonitrile and styrene. The hardness and strength of WPC obtained were higher than those of an unmodified wood. Thus, it was found that the WPC is suited for a head of golf club, because the Shore hardness value of WPC is 36% greater than that of unmodified wood. An impregnation method of monomers with some pigments could produce colored WPC without diminishing natural grain. Head of golf club could be manufactured from colored WPC in practice. (auhtor).

International Nuclear Information System (INIS)

Glow discharge plasma nitriding of AISI 304 austenitic stainless steel has been carried out for different processing time under optimum discharge conditions established by spectroscopic analysis. The treated samples were analysed by X-ray diffraction (XRD) to explore the changes induced in the crystallographic structure. The XRD pattern confirmed the formation of an expanded austenite phase (#gamma#_N) owing to incorporation of nitrogen as an interstitial solid solution in the iron lattice. A Vickers microhardness tester was used to evaluate the surface hardness as a function of indentation depth (#mu#m). The results showed clear evidence of surface changes with substantial increase in surface hardness.

International Nuclear Information System (INIS)

The distributions of the effective numbers of 6q-fluctons in the energy, momentum and distance to the center of mass of nucleus are studied. Many characteristics of these distributions are shown to be universal, i.e. independent of the flucton size. The saturation of the flucton density in A > 80 nuclei and other peculiarities are found, which define different behavior of the effective numbers of fluctons and deuterons. This fact provides an explanation of the known underestimate by a factor of 1.5-6 of the cross sections of hard inclusive (p, p'd) process on nuclei calculated in the quasi-elastic approximation.

Energy Technology Data Exchange (ETDEWEB)

The efficiency of NbC on WC grain coarsening in a WC-10wt.%Co hardmetal alloy was demonstrated by hardness measurement and WC granulation observation. The heterogeneous and overall grain growth were controlled. A low temperature experimentally produced NbC was used and compared to the inhibition potential of a commercial NbC powder. The results were the same in terms of structural fineness and hardness. The dispersion of the experimental NbC was not a problem, in spite of its size. The experimental NbC has very large particles, formed by agglomerates of small crystallites. During milling these agglomerates could be broken down. (orig.)

International Nuclear Information System (INIS)

The formation of thin SiO_2 layers on silicon and metal silicides was studied by phase- and thickness measurements with Rutherford back-scattering of 2 MeV alfa particles. Thermal oxidation was done in steam and dry oxygen at temperatures between 750 degrees Celsius and 1 100 degrees Celsius, while SiO_2 formation at room temperature was carried out by anodic oxidation. The study of silicon oxidation was done on Si<100>, Si<111> and amorphous silicon substrates. Thermal oxidation of CoSi_2, CrSi_2, NiSi_2, PtSi and TiSi_2 was investigated. The oxidation rates of the silicides were found to be much higher than for silicon. The oxidation process is also diffusion-limited with a higher oxidation rate for steam as compared to dry oxygen. The silicide layers were found to stay intact during thermal oxidation. A certain amount of structural and chemical instability did appear. Chemical instabiliy ...

British Library Electronic Table of Contents (United Kingdom)

In this paper we describe how cleavable surfactants decompose into water-insoluble silanols and two water-soluble products when subjected to vacuum plasma treatment. We used Raman spectroscopic analysis to confirm these structural changes, and we performed contact angle measurements and employed scanning electron microscopy to observe the surface morphologies of these compounds. Our contact angle measurements confirm that the products had degraded on nylon fabrics during argon gas plasma treatment. All of the PEG-silicone polyesters displayed excellent water-repellency; PEG6000-silicone exhibited the largest contact angle (130?) and, hence, the greatest water-repellency. Our results indicate that the silanols that form upon plasma treatment may be useful in coatings applications. We also f...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

International Nuclear Information System (INIS)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics.

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

Science.gov (United States)

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

International Nuclear Information System (INIS)

More than sixty base-isolated buildings have been built in Japan. A number of base-isolation systems were considered in our research, which was intended to establish the effectiveness of base-isolation systems. We conducted research on silicone rubber bearings. Generally, silicone rubber is durable and its characteristics are not dependent on the temperature within the relevant design range. The first part of the report covers material and elements testing. After the bearings were installed in the building, we performed forced vibration tests in both the horizontal and vertical directions. These test results form the next section. After several experiments, we carried out earthquake observations. We report on the effectiveness of the system in reducing response acceleration during a small displacement. This system was installed in the building in March 1992

International Nuclear Information System (INIS)

There have been several reports of transient-enhanced diffusion during furnace or rapid thermal annealing of ion-implanted silicon and some reports of no enhancement. In this contribution, the authors show that many of the observed effects can be accounted for by an interstitial trapping mechanism, in which large numbers of Si atoms are trapped by group V dopant atoms in the amorphous material during implantation. These trapped atoms are retained during solid-phase-epitaxial (SPE) growth, but can be released later during thermal processing to give the transient-enhanced diffusion. The authors present a model which can predict the transient effects (or lack of them) for any concentration of Sb, Bi, or As dopants sufficient to amorphize the silicon and any thermal processing technology which relies on SPE growth (furnace, cw laser, or rapid thermal annealing).

Energy Technology Data Exchange (ETDEWEB)

Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

Energy Technology Data Exchange (ETDEWEB)

New results for two types of nano-size silicon, prepared via thermal vapour deposition either with or without a graphite substrate are presented. Their superior reversible charge capacity and cycle life as negative electrode material for lithium-ion batteries have already been shown in previous work. Here the lithiation reaction of the materials is investigated more closely via different electrochemical in situ techniques: Raman spectroscopy, dilatometry and differential electrochemical mass spectrometry (DEMS). The Si/graphite compound material shows relatively high kinetics upon discharge. The moderate relative volume change and low gas evolution of the nano silicon based electrode, both being important points for a possible future use in real batteries, are discussed with respect to a standard graphite electrode. (author)

Science.gov (United States)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

British Library Electronic Table of Contents (United Kingdom)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

Energy Technology Data Exchange (ETDEWEB)

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

Energy Technology Data Exchange (ETDEWEB)

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10{sup 14} cm{sup -2}) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure.

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

Energy Technology Data Exchange (ETDEWEB)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...

Energy Technology Data Exchange (ETDEWEB)

By isomorphous replacement of silicon by phosphorus the authors have synthesized crystalline aluminosilicophosphates with structures of the zeolites type A and faujasite. They determine the adsorption capacity of specimens treated at 575-1275/sup 0/K. They show that the thermal stability and acid resistance of aluminosilicophosphates depend on the quantity of phosphorus in their structure.

Energy Technology Data Exchange (ETDEWEB)

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

Science.gov (United States)

A metallization scheme has been developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300/sup 0/C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed. Palladium is deposited with an immersion palladium solution and an electroless palladium solution, and nickel is deposited with an electroless nickel solution. Solder is applied with a molten solder dip. Extensive development work has been performed to achieve an effective immersion palladium solution formulation, leading to reproducible formation of the palladium silicide contact layer. This metallization system ...

International Nuclear Information System (INIS)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of #left brace#311#right brace# defects and ...

Energy Technology Data Exchange (ETDEWEB)

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission ...

Energy Technology Data Exchange (ETDEWEB)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...

International Nuclear Information System (INIS)

Polycrystalline silicon films have been grown from Si_2H_6 by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si_2H_6 dissociation.

International Nuclear Information System (INIS)

The possibility of smoothening aspherical X-ray mirrors by irradiation of the surface with a low-energy ion beam is investigated. Nanofocusing being the primary application of these mirrors the ion beam conditions must be optimized to achieve a surface roughness of the order of 0.1-0.2 nm. To address this issue a first study was performed on silicon flat substrates etched using ion energies ranging from 400 to 1200 eV. A second study consisted of eroding the silicon surface while varying the ion grazing incidence angle between 10 deg. and 90 deg. for a fixed value of the ion energy. The surface topography of the samples was characterized at various scales using atomic force microscopy (probed area: 1-10 ?m2), interferential optical microscopy (probed area: 1 mm2) and X-ray scattering (probed area: 100 mm2). Finally, a study by AFM of the evolution of the surface finish level of a silicon mirror after ion erosion at various ...

Energy Technology Data Exchange (ETDEWEB)

An asymmetrical shaped capillary die made exclusively of graphite is used to grow silicon ribbon which is capable of being made into solar cells that are more efficient than cells produced from ribbon made using a symmetrically shaped die.

UK PubMed Central (United Kingdom)

The effects of sennosides on colonic motility were investigated in eight conscious dogs chronically fitted with two strain gauge transducers in the proximal colon, an intracolonic silicone catheter...Full Text Available

Science.gov (United States)

ADVANCED MODELING, S IMULATION, AND ANALYSIS (ROADMAP 14). ...... Metal/Silicon Extraction from Regolith & manufacturing ..... addresses solar power, energy storage (in conjunction with solar power and as a prime source of ...

Energy Technology Data Exchange (ETDEWEB)

We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

Energy Technology Data Exchange (ETDEWEB)

Modified Ostwald ripening theory is used to calculate the time evolution of the size distribution function of extended end-of-range defects in ion implanted silicon. This allows the authors to compare the time dependent self-interstitial supersaturation during post-implantation annealing in the presence of Frank-type stacking faults with that in the presence of {l_brace}311{r_brace}-defects. It is shown that the latter affect self-interstitial concentrations up to the point where they dissolve whereas the former are irrelevant from the point of view of transient enhanced diffusion.

Energy Technology Data Exchange (ETDEWEB)

Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

Energy Technology Data Exchange (ETDEWEB)

In situ Auger sputter depth profiles of saturation implants of 3 keV N/sub 2//sup +/ in silicon at room temperature exhibit a sharp peak in the nitrogen concentration in the outermost layers, followed by a monotonic decrease. No broad plateau was observed. The energy of the Auger line corresponding to the Si(2p) core electron excitation, monitored throughout the profiling, exhibits a chemical shift of up to 7 eV at the surface peak concentration. Inert gas ion post-bombardment of unsaturated implants significantly modifies the profile, and supports the suggestion that the surface peak arises through radiation enhanced diffusion of implanted atoms.

International Nuclear Information System (INIS)

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). The authors have developed a comprehensive model which, in combination with a model and parameters for #left brace#311#right brace# defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

Science.gov (United States)

The results of the second phase of the program of developing low cost contacts to silicon solar cells using copper are presented. Phase 1 yielded the development of a plated Pd-Cr-Cu contact system. This process produced cells with shunting problems when they were heated to 400 C for 5 minutes. Means of stopping the identified copper diffusion which caused the shunting were investigated. A contact heat treatment study was conducted with Pd-Ag, Ci-Ag, Pd-Cu, Cu-Cr, and Ci-Ni-Cu. Nickel is shown to be an effective diffusion barrier to copper.

Energy Technology Data Exchange (ETDEWEB)

Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis ...

Science.gov (United States)

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced ...

Energy Technology Data Exchange (ETDEWEB)

In the present thesis I discuss the hard spectator interaction amplitude in B {yields} {pi}{pi} at NLO i.e. at O({alpha}{sup 2}{sub s}). This special part of the amplitude, whose LO starts at O({alpha}{sub s}), is defined in the framework of QCD factorization. QCD factorization allows to separate the short- and the long-distance physics in leading power in an expansion in {lambda}{sub QCD}/m{sub b}, where the short-distance physics can be calculated in a perturbative expansion in {alpha}{sub s}. Compared to other parts of the amplitude hard spectator interactions are formally enhanced by the hard collinear scale {radical}({lambda}{sub QCD}m{sub b}), which occurs next to the mb-scale and leads to an enhancement of {alpha}{sub s}. From a technical point of view the main challenges of this calculation are due to the fact that we have to deal with Feynman integrals that come with up to five external legs and with three ...

Energy Technology Data Exchange (ETDEWEB)

Over the past 40 years, cavern storage of LPG's, petrochemicals, such as ethylene and propylene, and other petroleum products has increased dramatically. In 1991, the Gas Processors Association (GPA) lists the total U.S. underground storage capacity for LPG's and related products of approximately 519 million barrels (82.5 million cubic meters) in 1,122 separate caverns. Of this total, 70 are hard rock caverns and the remaining 1,052 are caverns in salt deposits. However, along the eastern seaboard of the U.S. and the Pacific northwest, salt deposits are not available and therefore, storage in hard rocks is required. Limited demand and high cost has prevented the construction of hard rock caverns in this country for a number of years. The storage of natural gas in mined caverns may prove technically feasible if the geology of the targeted market area is suitable; and economically feasible if the cost and ...

Energy Technology Data Exchange (ETDEWEB)

Sintered glass-ceramics were produced from coal fly ashes, red mud from aluminum production and silica fume. The capabilities of Tuncbilek fly ash and a mixture of Orhaneli fly ash, red mud and silica fume to be vitrified and devitrified by sintering process were investigated by means of scanning electron microscopy and X-ray diffraction analysis. To determine the effect of binder in the sintering technique, glass powders were pressed without or with the addition of polyvinyl alcohol. Owing to microstructural observations, density and hardness measurements, it can be said that physical properties and the hardness of the produced samples strongly depended on the crystallization degree of the samples. Toxicity characteristic leaching procedure test results showed that glass-ceramic samples produced by using sintering technique could be considered as nonhazardous materials. Chemical durability of the sintered glass-ceramic samples was also good. ...

International Nuclear Information System (INIS)

Total-dose irradiation seriously damages MOS devices and their circuit performance. Threshold voltage shifts, transconductance degradation and increase in off-state leakage current are generally observed for irradiated devices. These instabilities are essentially due to positive and/or negative charge trapping in SiO_2 and interface trap generation at the SiO_2/Si interface. Radiation hardening of CMOS VLSIs is to eliminate these trapping effects, and for this purpose, special considerations for fabrication processes and layout design are necessary. In this paper, basic mechanisms for radiation-induced charge trapping and related effects on MOS devices are reviewed. Also discussed are radiation-hardening technologies from both fabrication-process and layout-design viewpoints. Using these technologies, 1 #mu#m radiation-hard CMOS gate arrays have been successfully developed. Experimental data taken for 2k-gate test chips indicate that radiation ...

Energy Technology Data Exchange (ETDEWEB)

Direct current (DC) glow discharge plasma nitriding was carried out on three selected surface-roughened AISI 304 stainless steel samples at 833 K under 4 mbar pressures for 24 h in the presence of N{sub 2}:H{sub 2} gas mixtures of 50 : 50 ratios. After plasma nitriding, the phase formation, case depth, surface roughness, and microhardness of a plasma-nitrided layer were evaluated by glancing angle x-ray diffractogram, optical microscope, stylus profilometer, and Vickers microhardness tester techniques. The case depth, surface hardness, and phase formation variations were observed with a variation in initial surface roughness. The diffraction patterns of the plasma-nitrided samples showed the modified intensities of the {alpha} and {gamma} phases along with those of the CrN, Fe{sub 4}N, and Fe{sub 3}N phases. Hardness and case depth variations were observed with a variation in surface roughness. A maximum hardness of 1058 Hv ...

Energy Technology Data Exchange (ETDEWEB)

The plastic displacements around Knoop indentations made in hard titanium/aluminum multilayered films on soft aluminum alloy substrates have been studied. Indentations were cross-sectioned and imaged using the focused-ion-beam (FIB) milling and high-resolution scanning electron microscopy (SEM), respectively. The FIB milling method has the advantage of removing material in a localized region without producing mechanical damage to the specimen. The micrographs of the cross-sectioned indentations indicate that most of the plastic deformation around the indentation is dominated by the soft aluminum substrate. There is a very small change in the multilayered film thickness around the indentation{emdash}less than 10{percent}. The plastic deformation of the thin film resembles a membrane being deflected by a localized pressure gradient across the membrane. Stress-induced voids are also observed in the multilayered film, especially in the area around the indentation apex. ...

International Nuclear Information System (INIS)

The effects of key metallurgical variables on the low fluence hardening in a set of A533B model steels were evaluated over a wide range of irradiation temperatures. Above about 163 degrees C hardening increased with higher copper and nickel contents, as is typical of the pressure vessel operating regime around 290 degrees C. However, at 121 degrees C the hardening was generally lower and unaffected by copper and nickel variations. This observation of decreased hardening with lower temperature (e.g. an open-quotes invertedclose quotes temperature dependence) is tentatively attributed to a reduced contribution of copper precipitation. Tensile data for a set of commercial steels with a range of (uncontrolled) compositions also showed minimal sensitivity to copper variations at 121 degrees C. Unlike the hardness data no systematic reductions in the yield stress increases were observed between 163 and 121 degrees C. However, the ultimate tensile strength did decrease at ...

Energy Technology Data Exchange (ETDEWEB)

In this work, an attempt was made to develop a novel type of wear-resistant composite employing a TiNi alloy matrix reinforced by hard particles. Titanium carbide was chosen as the reinforcing phase because of its high hardness and TiNi alloy as the matrix due to its pseudoelasticity and good toughness. TiC particles may sustain external load, while the TiNi matrix may accommodate deformation, absorb impact energy and retain the hard particles. Such a combination is expected to lead to an enhanced wear resistance, compared to TiNi alloy. As a matter of fact, some efforts were previously made to develop TiNi-matrix composite reinforced by ceramic particles. However, the emphasis of those studies was put on effects of the reinforcing particles on the phase transformation behavior, shape memory effect and some mechanical properties of the composite; no attempt was made to explore the potential benefit of the material for wear ...

Energy Technology Data Exchange (ETDEWEB)

The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10{sup -5} bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of {epsilon} and {gamma}' nitrides in the compound layer, with a preferential formation of {gamma}' at the expense of the {alpha}-phase at the ...

Energy Technology Data Exchange (ETDEWEB)

The influences of temperature and duration of tempering on hardness and microstructure were investigated at high-temperature martensitic and low-carbon steels with 9% chrome and the further alloying elements molybdenium, vanadium, niobium and partially tungsten. After austenitizing and subsequent air cooling the steels were tempered at temperatures below, at and above Ac{sub 1b} for different times and finally a hardness test was performed. Making use of the temperature dependence of the hardness tempering diagrams were constructed and the Hollomon-Jaffe-Parameter on the three steels was determined within its application limits. Micrographs of the structure shows the formation of the carbides and the martensite. At tempering temperatures below Ac{sub 1b} a decrease of hardness occurs, above Ac{sub 1b}, a hardness rise due to the partial austenitizing was obtained. While hardening ...

International Nuclear Information System (INIS)

Radiation induced polymerization of methylmethacrylate and copolymerization of styrene-acrylonitrile mixture in mamrase Carpinus betulus was carried out by means of #gamma#-ray, under different moisture levels and additives. Under all conditions the degree of polymerization was as high as 60%. No pronounced differences were observed in the kinetics of the polymerization of MMA either with moisture content of wood nor with kind and amount of additives. At high moisture (80% RH) content the dimensional stability of wood-PMMA was increased four fold as compared with untreated wood. The hardness increased about 100% for a weight conversion of monomer of about 30 to 40%. Hardness of this wood-polymer composite is comparable to that of the best noble woods in the world. (author).

Energy Technology Data Exchange (ETDEWEB)

The NACE MR-01-75 standard imposes a restriction of 22HRC maximum for regions of a pipeline girth weld that are not in direct contact with H[sub 2]S containing environments. TWI have demonstrated in an earlier project for the Pipeline Research Committee (PRC) that it may be permissible to relax this maximum hardness requirement. Such a relaxation, which already exists in the BS4515: 1984 standard, offers potential benefits when applied to the capping pass and heat affected zone of a pipeline girth weld. This report presents additional data to supplement that obtained in a previous PRC project conducted at TWI. Further pipe materials with differing pipe wall thicknesses have been welded, exposed to an internal H[sub 2]S containing environment and examined for sulphide stress corrosion cracking.

British Library Electronic Table of Contents (United Kingdom)

The corrosion behavior of hard metals with VC and Cr3C2 grain growth inhibitors was investigated in alkaline solutions by electrochemical methods. The two inhibitors have opposite effects on the corrosion behavior: Cr3C2 significantly improves the corrosion behavior, whereas VC-containing alloys show a poor resistance. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) and analytical transmission electron microscopy (TEM) analyses of the distributions of Cr and V in the composite material, as well as in the surface layers formed during corrosion were employed to clarify the influence of these elements on the corrosion behavior. The measurements showed that VC is precipitated mostly along the WC/binder interface after the liquid-phase sintering process, while Cr3C2 is almost homogene...

International Nuclear Information System (INIS)

Rossi X-ray Timing Explorer (RXTE) observations of the bright supernova remnant Cas A have revealed a hard power law component above 10 keV in addition to two thermal components inferred from ASCA measurements of the many line centroids from low-Z elements. The power law can be shown to be consistent with synchrotron emission from radio to hard x-rays by electrons of up to 4 x 10"1"3 eV. Measurement of the 1157 keV line by CGRO from "4"4Sc in the chain of decay of "4"4Ti predicts that the two "4"4Ti lines at 68 and 78 keV should appear at the CGRO intensity. RXTE has placed upper limits on such lines that are marginally consistent with the CGRO measurement. Implications of these results on sites for cosmic ray acceleration and nucleosynthesis are discussed.

International Nuclear Information System (INIS)

In the present investigation, the properties of plasma nitrided AISI 304 steel were studied by changing the presence of nitrogen in the gas mixture. The plasma nitriding was performed at temperature -560 deg C, pressure -4 mbar and duration 24 hours. The nitrided samples were characterized by evaluating the phase composition, micro hardness, and diffusion layer thickness. The phase analysis indicates the mixed phases of CrN and Fe_3N, Fe_3N and Fe_4N which has the highest intensity. The results show the glow discharge plasma nitriding in presence of N_2 (80 vol. %) and H_2 (rest) produced higher hardness as well as higher case depth. (author)

Energy Technology Data Exchange (ETDEWEB)

With the aim of optimizing the nitriding process, experimental studies of the plasma nitriding of four selected steels were carried out, using a d.c. glow discharge. The process parameters were varied systematically. By means of transmission and scanning electron microscopy and X-ray diffraction, the microstructures, including the thicknesses of the compound zones and the diffusion zones of the nitrided steels, were obtained. Using cross-sectional samples and a micro-Vickers indenter, hardness depth profiles were also obtained. From the time and temperature dependences of the hardness profiles, effective diffusion constants and corresponding activation enthalpies were obtained. Furthermore, in an attempt to shed some light on the atomistic nitriding mechanisms, the glow discharges were studied by measuring energy spectra of the energetic ions hitting the cathode (the steel test specimens). It was shown that an increase of the mean energy of the ...

British Library Electronic Table of Contents (United Kingdom)

Given the important role of parent-youth communication in adolescent well-being and quality of life, we sought to examine the relationship between specific communication variables and youth perceived quality of life in general and as a deaf or hard-of-hearing (DHH) individual. A convenience sample of 230 youth (mean age = 14.1, standard deviation = 2.2; 24% used sign only, 40% speech only, and 36% sign + speech) was surveyed on communication-related issues, generic and DHH-specific quality of life, and depression symptoms. Higher youth perception of their ability to understand parents' communication was significantly correlated with perceived quality of life as well as lower reported depressive symptoms and lower perceived stigma. Youth who use speech as their single mode of communication ...

International Nuclear Information System (INIS)

The effect of various hydrogen concentrations on the crystal lattice period and the hardness of titanium alloy was examined, the alloy containing about 16 at.% Mo (27.5 wt. % Mo) and having #beta# structure. The peculiar features of the mechanism of plastic deformation of the alloy were studied after adding hydrogen to it. A dependence of the crystal lattice period on the concentration of hydrogen was obtained for TixMoxH_2 alloy. It has been established that the hardness of the Ti-Mo alloy does not change when hydrogen is added to it. The presence of hydrogen introduces changes into the mechanism of deformation of #beta#-titanium alloy. The configuration of the inverse pole figures after rolling proves that the transverse slip process in an alloy with hydrogen is hampered, and that the coplanar slip process is developing in it.

British Library Electronic Table of Contents (United Kingdom)

Ochratoxin A (OTA) was analyzed from 44 liquorice confectionery samples using immunoaffinity cleanup and liquid chromatography coupled with fluorescence detection. The presence of OTA was confirmed by methyl-ester derivatization. Liquorice confectionery samples were purchased from different retail outlets and supermarkets in Spain during 2007-2008, 16 of hard candies and 28 of soft candies. The incidence of OTA varied between 75% and 39% and mean ranged from 2.96 to 0.34mg/kg for hard and soft candies, respectively. Assuming a total mean value of 1.29mgOTA/kg sweet and a consumption of about 1.2g liquorice sweets per day, an OTA weekly uptake of 11ng was obtained, or, based on a total body weight of 30kg for a child consuming these sweets regularly, a weekly intake of 0.37ng/kg body weight...

International Nuclear Information System (INIS)

AISI 5140 steel was plasma nitrided at various gas mixtures of nitrogen, hydrogen, and argon to investigate the actions of hydrogen and argon on plasma nitriding. The structural and mechanical properties of ion-nitrided AISI 5140 steel have been assessed by evaluating composition of phases, surface hardness, compound layer thickness, and case depth by using X-ray diffraction (XRD), microhardness tests, and scanning electron microscopy (SEM). It was found that the growth of compound layer can be controlled and the diffusion improved when the gas mixture includes H_2 gas. Additionally, it was determined that the amount of Ar in dual gas mixture must be at 20% minimum to obtain distinctive surface hardness and compound layer thickness.

International Nuclear Information System (INIS)

The energy, angular momentum, and distance (measured from the center of mass of the nucleus) distributions of the effective number of 6q-fluctons are investigated and it is shown that many of the characteristics of these distributions are universal, i.e., independent of the flucton size. ''Saturation'' of the flucton density in nuclei with mass A approx > 80 and certain other features that determine the difference between the behaviors of the effective numbers of fluctons and deuterons are reported. This is used to explain the well known underestimation (by a factor of 1.5--6) of the cross section for the hard inclusive (p, p'd) process on nuclei calculated in the quasielastic formalism. See S. G. Kadmenskii and V. I. Furman, Alpha decay and elated nuclear reactions (in Russian), Energoatomizdat, Moscow, 1985.

Energy Technology Data Exchange (ETDEWEB)

Microstructural observations of damage around indentations in Ti{sub 3}SiC{sub 2} are presented. The Vickers hardness decreased with increasing load and asymptotically approached 4 GPa at the highest loads. No indentation cracks were observed even at loads as high as 300 N. Preliminary strength versus indentation plots indicate that, at least for the large-grained material ({approx}100 {micro}m) studied here, Ti{sub 3}SiC{sub 2} is a damage-tolerant material able to contain the extent of microdamage to a small area around the indent. The following multiple energy-absorbing mechanisms have been identified from scanning electron micrographs of areas in the vicinity of the indentation: diffuse microcracking, delamination, crack deflection, grain push-out, grain pull-out, and the buckling of individual grains.

Science.gov (United States)

We present a new approach for growing Si nanowires directly from a silicon substrate, without the use of a metal catalyst, silicon vapor or CVD gasses. The growth can be performed in a furnace type configuration at moderate temperatures or in localized regions by resistive heating. Since the silicon wires grow directly from the silicon substrate, they do not need to be manipulated nor aligned for subsequent applications. Wires in the 20-50 nm diameter range with lengths over 80 ?m can be grown by this technique. We have studied the effects of various growth parameters, including temperature, substrate orientation, initial sample cleaning and carrier gasses. Results indicate that most important parameters in the growth of the nanowires are the surface cleaning, the temperature and the type of carrier gas used. A model is proposed, which involves an oxide catalyst for the process, with the growth of the ...

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Bulk micromachining generally refers to processes involving wet chemical etching of structures formed out of the silicon substrate and so is limited to fairly large, crude structures. Surface micromachining allows intricate patterning of thin films of polysilicon and other materials to form essentially two-dimensional layered parts (since the thickness of the parts is limited by the thickness of the deposited films). There is a third type of micromachining in which the part is formed by filling a mold which was defined by photolithographic means. Historically micromachining molds have been formed in some sort of photopolymer, be it with x-ray lithography (``LIGA``) or more conventional UV lithography, with the aim of producing piece parts. Recently, however, several groups including ours at Sandia have independently come up with the idea of forming the mold for mechanical parts by etching into the silicon substrate itself. In Sandia`s mold ...

International Nuclear Information System (INIS)

This report summarizes the findings of a five-month LDRD project funded through Sandia's NTM Investment Area. The project was aimed at providing the foundation for the development of advanced functional materials through the application of ultrathin coatings of microporous or mesoporous materials onto the surface of substrates such as silicon wafers. Prior art teaches that layers of microporous materials such as zeolites may be applied as, e.g., sensor platforms or gas separation membranes. These layers, however, are typically several microns to several hundred microns thick. For many potential applications, vast improvements in the response of a device could be realized if the thickness of the porous layer were reduced to tens of nanometers. However, a basic understanding of how to synthesize or fabricate such ultra-thin layers is lacking. This report describes traditional and novel approaches to the growth of layers of microporous materials on ...

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The investigated hybrid nanocomposite consists of a porous silicon template with electrochemically embedded Ni or Co nanostructures and offers magnetic characteristics which can be tailored by the electrochemical process parameters during fabrication. A twofold magnetic behaviour can be observed, a first one due to the spinmagnetism at magnetic fields below the saturation magnetization of the deposited metals and a second non-saturating term at higher fields (>1 T up to 7 T) above the saturation magnetization. In case of Ni deposited within the pores this non-saturating term shows a paramagnetic characteristic and follows exactly the Curie-Weiss law, whereas for Co/porous silicon samples the temperature dependent magnetization shows some deviations from the Curie Weiss law. In this high field region a difference in the temperature dependence between Ni and Co is observed whereas the non-saturating term does not depend on the geometry of ...

Science.gov (United States)

We present computer modeling along with experimental data on the formation of sharp conical tips on silicon-based three-layer structures that consist of a single-crystal Si layer on a 1 {mu}m layer of silica on a bulk Si substrate. The upper Si layers with thicknesses in the range of 0.8-4.1 {mu}m were irradiated by single pulses from a KrF excimer laser focused onto a spot several micrometers in diameter. The computer simulation includes two-dimensional time-dependent heat transfer and phase transformations in Si films that result from the laser irradiation (the Stefan problem). After the laser pulse, the molten material self-cools and resolidifies, forming a sharp conical structure, the height of which can exceed 1 {mu}m depending on the irradiation conditions. We also performed computer simulations for experiments involving single-pulse irradiation of bulk silicon, reported by other groups. We discuss conditions under which different types ...

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This thesis discusses an advanced dynamical two-dimensional cylinder symmetric model for the high temperature part of the carbothermic silicon metal process, and its computer encoding. The situation close to that which is believed to exist around one of three electrodes in full-scale industrial furnaces is modelled. This area comprises a gas filled cavity surrounding the lower tip of the electrode, the metal pool underneath and the lower parts of the materials above. The most important phenomena included are: Heterogeneous chemical reactions taking place in the high-temperature zone (above 1860 {sup o}C), Evaporation and condensation of silicon, Transport of materials by dripping, Turbulent or laminar fluid flow, DC electric arcs, Heat transport by convection, conduction and radiation. The results from the calculations, such as production rates, gas- and temperature distributions, furnace- and particle geometries, fluid flow fields etc, are ...

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In the present study, models of key chemical processes governing the compositions of the tapped metal from the cupola on the basis of physico-chemical fundamentals have been developed. As evident from the literature survey, the investigations conducted in the past have focused their attention on one phenomenon at a time; for example, a particular chemical reaction, measurement of gas composition or the temperature distribution inside a cupola. Notwithstanding the importance of these studies and their contribution toward the understanding of cupola operation, mathematical models of key chemical processes and their interdependence must be investigated to obtain a complete insight into the various interlinked phenomena occurring inside a cupola. For example, the oxidation of the metallic charge leads to the formation of iron oxide which influences the final content of elements such as silicon, manganese and carbon. The processes considered in this study are oxidation ...

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We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of Physics.}

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We investigate a new texturization technique for crystalline silicon solar cells with sodium carbonate (Na{sub 2}CO{sub 3}) solutions. We show the dependence of the hemispherical surface reflectance on solution temperature, the etching time and the Na{sub 2}CO{sub 3} concentration. Furthermore, we investigate what element in Na{sub 2}CO{sub 3} solution influences the texturing for reducing the texturing time. As a result of experiments, we find it possible to get low reflectance in a shorter texturing time by the addition of NaHCO{sub 3}. The size of texture becomes smaller by the addition of NaHCO{sub 3} but the etching rate does not change. We conclude carbonic ion and/or its compound seems to play an important role as the initiator of pyramidal structure. This texturing method is cost effective because there is no need of expensive IPA, and the surface reflectance is reduced sufficiently in a short time. This method is promising for a large-scale production of ...

Energy Technology Data Exchange (ETDEWEB)

An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO/sub 2/. As shown by the investigations of a study of the anodic behavior of Fe/sub 40/Ni/sub 40/P/sub 14/B/sub 6/ and Fe/sub 40/Ni/sub 38/Mo/sub 4/B/sub 18/, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of similar composition but ...