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Phenotyping in the archaea: optimization of growth parameters and analysis of mutants of Haloferax volcanii  

British Library Electronic Table of Contents (United Kingdom)

Abstract A method to grow the halophilic archaeon Haloferax volcanii in microtiter plates has been optimized and now allows the parallel generation of very reproducible growth curves. The doubling time in a synthetic medium with glucose is around 6-h. The method was used to optimize glucose and casamino acid concentrations, to clarify carbon source usage and to analyze vitamin dependence. The characterization of osmotolerance revealed that after a lag phase of 24-h, H. volcanii is able to grow at salt concentrations as low as 0.7-M NaCl, much lower than the 1.4-M NaCl described as the lowest concentration until now. The application of oxidative stresses showed that H. volcanii exhibits a reaction to paraquat that is delayed by about 10-h. Surprisingly, only one of two amino acid auxotrophi...

2011-01-01

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Effects of DC gate and drain bias stresses on the degradation of excimer laser crystallized polysilicon thin film transistors  

Energy Technology Data Exchange (ETDEWEB)

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V{sub GS} = V{sub DS}/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the ...

2005-01-01