hafnium arsenides: Topics by WorldWideScience.org

Half-lives of 35 radionuclides

... carrier-free isotopes hafnium compounds irradiation protons solvent extraction

Gallium Arsenide Pilot Line for High Performance ...

... 67 gamma detection hafnium 180 half-life indium 111 iodine 125 iodine 131

Pitting corrosion of zirconium and hafnium

... used in our aluminum process include a barrier to isolate aluminum from the gold-based ohmic contacts, thereby preventing "purple plague," and a ...

1991-08-08

Exploratory investigation of yttrium, lanthanum, and hafnium ...

The initiation and inhibition of pitting corrosion on zirconium and hafnium in aqueous solutions have been investigated by potentiodynamic, potentiostatic and galvanostatic measurements at 25/sup 0/C. Effects of Cl/sup -/, Br/sup -/and I/sup -/ have been examined over a range of salt concentrations and pH. All three halide ions cause pitting attack on the two metals, but this may be inhibited by other anions. The results show that hafnium is more easily protected against pitting than is zirconium. The data are treated by the Butler-Volmer equation to yield more information about the mechanisms of the pitting corrosion.

1988-02-01

Study of complexing reactions and ligand exchange of zirconium and hafnium tetrachlorides with substituted derivative of O-naphthoquinonediazide

Results showed that a simple yttrium coating offered more potential for ... was from 70 to 150 K (125' to 200' F) above that for the yttrium coating. ...

Study of complexing reactions and ligand exchange of zirconium and hafnium tetrachlorides with substituted derivative of O-naphthoquinonediazide

Using the PMR method the interaction of zirconium and hafnium tetrachlorides with tri.tet.butylphenyl ester of 1,2- naphthoquinonediazide (2)-5-sulfonic acid is studied. The formation of MCl/sub 4/xNQD complexes is established, the equilibrium constants and thermodynamic parameters of complexing reaction are determined. The presence of rapid ligand exchange, proceeding according to associative mechanism, is detected. The rate constants and activation energies of the exchange reaction are calculated.

1981-11-01

Dissociation energies of HfO and ThO

Using the PMR method the interaction of zirconium and hafnium tetrachlorides with tri.tet.butylphenyl ester of 1,2- naphthoquinonediazide (2)-5-sulfonic acid is studied. The formation of MCl_4xNQD complexes is established, the equilibrium constants and thermodynamic parameters of complexing reaction are determined. The presence of rapid ligand exchange, proceeding according to associative mechanism, is detected. The rate constants and activation energies of the exchange reaction are calculated.

NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

The RKR potential energy curves are constructed for the ground states of diatomic hafnium oxide and thorium oxide. Using Lippincott and Hulburt-Hirschfelder potential function the dissociation energies are estimated by curve fitting method. The H-H potential function was found to give a better fit in both cases. The dissociation energies of hafnium oxide and thorium oxide are estimated as 9.04 #+-# 0.02 eV and 10.34 #+-# 0.01 eV respectively. (author).

Indium Arsenide (InAs) Quantum ... - Glenn Research Center - NASA

Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

1993-05-01

High bandgap window layer for GaAs solar cells and fabrication process therefor

Oct 16, 2006 ... Williams, F.; and Nozik, A.J.: Irreversibilities in Mechanism of Photoelectrolysis. Nature, vol. 271, no. 5641, 1978, pp. 137-139. Luque, A.; and ...

A Gallium Arsenide MESFET Operational Amplifier for Use in ...

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power ...

1979-05-29

Extraction of hafnium by 1-phenyl-3-methyl-4-benzoyl-5-pyralozone from aqueous-alcoholic solutions

... 19. AmSTR.ACT (Continuq 9n =usff i En " Adentity by bo nwnb Agallumarsemoe t(a.") MEtFET ... 2%ITE 4T (Include Area Code) InghE SMO ...

1993-12-01

Electronic structure and properties of boron phosphide and boron arsenide

Extraction of hafnium by 1-phenyl-3-methyl-4-benzoyl-5-pyrazolone (HL) in benzene, toluene, chloroform and tetrachloromethane from aqueous-alcoholic solutions of the formal acidity of 2M-HClO_4 was studied. Methyl, ethyl, n- and isopropyl, tert-butyl and allyl alcohol as well as ethylene glycol monomethyl ether and propylene glycol were used as organic components of the mixed aqueous-organic phase. Their presence in some cases resulted in a synergic increase in the distribution ratio of hafnium. The increase is interpreted using the results of a slope analysis and measurements of the alcohol distribution and the relative permittivity of the organic phase. It is suggested that HfL_4 molecules were solvated by alcohol molecules in the organic phase. At high alcohol concentration synergism changed into antagonism. This was caused by changes in the distribution of HL and its interaction with the alcohol in the organic phase. (author).

Feasibility investigations of growing and characterizing gallium arsenide crystals in ribbon form. Quarterly progress report 1 Jan-31 Mar 1975

The composite wave variational version of the APW (augmented plane wave) method is used to obtain the electronic band structure of the compounds boron phosphide and boron arsenide at the high symmetry points #GAMMA#, X, and L. The tight binding interpolation scheme of Slater and Koster is used to calculate the rest of the band structure. The results show that both these materials are indirect band gap semiconductors. The density of states, and the imaginary part of the dielectric constant is also calculated. The theoretical results are compared with the reported experimental and theoretical data. (author).

Separation of magnesium from magnesium chloride and zirconium and/or hafnium subchlorides in the production of zirconium and/or hafnium sponge metal

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

Wetlands remediation of gallium arsenide: A case study describing a site-specific exposure assessment

This patent describes the producing of a refractory metal wherein a sponge refractory metal is produced as an intermediate product by the use of magnesium with the incidental production of magnesium chloride, and wherein residual magnesium is separated from the magnesium chloride and from refractory metal to a vacuum distillation step which fractionally distills the magnesium, the magnesium chloride, and the metal sub-chlorides; the steps of: recovering fractionally distilled vapors of magnesium chloride and metal sub-chlorides from a sponge refractory metal; separately condensing the vapors as separately recovered; and recycling the separately recovered magnesium at a purity of at least about 96%.

1990-09-21

The AMOS cell - An improved metal-semiconductor solar cell

Based upon the existing regulatory cleanup criteria, remediation of this wetlands was proposed by the New Jersey Department of Environmental Protection and Energy (NJDEPE). This remedial process would have totally destroyed a thriving Old Field Wetlands. Site-Specific evaluation of the chemicals of potential concern (CPC), remaining source areas, potential environmental fate and transport (EF and T), toxicology (including oral absorption and bioaccumulation) and potential land use scenarios were conducted. It was determined that although the analytical chemistry data reported soil concentrations of arsenic, the compound used by the facility and discharged to the wetlands sediments was in fact gallium arsenide. Secondly, all remaining source areas and hot spots had previously been remediated. Vertical migration to soils had not progressed past a depth of 3 feet and groundwater/surface water did not contain significantly elevated concentrations of gallium ...

1994-12-31

Breakdown electroluminescence spectra in structures based on the solid solutions Ga/sub 1-x/Al/sub x/P(As)

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

1975-01-01

Magnetization and 61Ni Moessbauer effect study of the ternary arsenide CrNiAs

The authors investigate the breakdown luminescence spectra in reverse-biased p-n heterojunctions based on gallium and aluminum phosphides and arsenides for the purpose of determining their behavior as lasing and photodetection materials. Data are given on temperature coefficients, band gap structure, bremsstrahlung, hot carrier mobility and photon emission, and transition and recombination parameters.

1987-08-01

High-efficiency solar cell and method for fabrication

The results of x-ray diffraction, dc magnetization, and 61Ni Moessbauer spectroscopy studies of the ternary arsenide CrNiAs are reported. This compound crystallizes in the orthorhombic Fe2P-type structure (space group P6-bar2m) with the lattice parameters a 6.1128(2) A and c = 3.6585(1) A. CrNiAs is a mean-field ferromagnet with Curie temperature TC = 171.9(1) K and the critical exponents ? 0.514(18), ? = 1.010(16), and ? = 2.922(10). The temperature dependence of the magnetic susceptibility above TC follows the modified Curie-Weiss law with a paramagnetic Curie temperature of 176.0(3) K and effective magnetic moment per transition metal atom of 2.42(1) ?B. The magnetic moment per formula unit at 4.2 K is found to be 1.114(33) ?B. The hyperfine magnetic field at 61Ni nuclei at 4.2 K of 41.5(1.0) kOe implies that the Ni atoms carry a magnetic moment of 0.15(3) ?B, and that the moment carried by the Cr atoms is 0.95(6) ?B. The Debye temperature of CrNiAs is 221(1) K.

2008-08-13

1 2 3

Luminescent determination of zirconium and hafnium with myricetin

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical ...

1999-08-31

Fuel bundle geometry and composition influence on coolant void reactivity reduction in ACR and CANDU reactors

Reaction of formation of 3, 5, 7, 3', 4', 5' - hexaoxiflavone - myricetin complexes with zirconium and hafnium ions has been the basis for development of luminescent method of determining these elements. Optimum conditions for complexing have been determined. For Hf they are : 8-9 HCl concentration, maximum fluorescence wave length (lambda fl.)of 520 nm, wave length of exciting light (lambda el) of 436 nm, for Zr lambda fl = 536nm, lambda el = 436 nm. Stable fluorescence establishes after 25 min. for Zr and after 15 min for Hf in the presence of 40% ethanol. Usage of various camouflage agents has permitted to attain high selectivity of the method. Possibility for determination of Zr with myricetin in the presence of a 10-time excess of Hf, Cr, Cu, 50-time excess of Mo and Ti is shown. Sensitivity of Zr determination is 2.0x10 #mu#g"-"2/ml, for Hf it is 9.0x10 #mu#g"-"3 and mineral waters.

Excitation functions for proton-induced reactions on natural hafnium: Production of {sup 177}Lu for medical use

It is very well known that the CANDU reactor has positive Coolant Void Reactivity (CVR), which is most important criticisms about CANDU. The most recent innovations based on using a thin absorbent Hafnium shell in the central bundle element were successfully been applied to the Advanced CANDU Reactor (ACR) project. The paper's objective is to analyze elementary lattice cell effects in applying such methods to reduce the CVR. Three basic fuel designs in their corresponding geometries were chosen to be compared: the ACR-1000TM, the RU-43 (developed in INR Pitesti) and the standard CANDU fuel. The bundle geometry influence on void effect was also evaluated. The WIMS calculations proved the Hafnium absorber suitability (in the latest 'shell design') to achieve the negative CVR target with great accuracy for the ACR-1000 fuel bundle design than for the other two projects. (authors)

2009-05-27

Excitation functions for proton-induced reactions on natural hafnium: Production of "1"7"7Lu for medical use

There is an increasing interest in using radioisotopes of rare earth elements for internal radiotherapy and for imaging in nuclear medicine. {sup 177}Lu is one of the promising radionuclides. This article reports on the first measurements of the excitation function for the production of {sup 177}Lu with proton-beam energies up to 17 MeV on natural hafnium targets. The experimental cross sections for the reaction {sup nat}Hf(p,x){sup 177}Lu were obtained by the activation of a stacked-foil target and subsequent gamma spectrometry. Theoretical cross sections were calculated up to 35 MeV with the EMPIRE nuclear reaction model code. The measured and calculated cross sections were used for deriving the thick-target yields and for estimating the production of other nuclides than {sup 177}Lu. Measured production cross sections of {sup 175,176,177,178}Ta on the same target are also presented.

2009-11-15

There is an increasing interest in using radioisotopes of rare earth elements for internal radiotherapy and for imaging in nuclear medicine. "1"7"7Lu is one of the promising radionuclides. This article reports on the first measurements of the excitation function for the production of "1"7"7Lu with proton-beam energies up to 17 MeV on natural hafnium targets. The experimental cross sections for the reaction "n"a"tHf(p,x)"1"7"7Lu were obtained by the activation of a stacked-foil target and subsequent gamma spectrometry. Theoretical cross sections were calculated up to 35 MeV with the EMPIRE nuclear reaction model code. The measured and calculated cross sections were used for deriving the thick-target yields and for estimating the production of other nuclides than "1"7"7Lu. Measured production cross sections of "1"7"5","1"7"6","1"7"7","1"7"8Ta on the same target are also presented.

2009-11-01

Phase diagrams

Formation of double hafnium sulfates in the systems HfO"2-H"2SO"4-Me"2SO"4-H"2O (Me-Na, K, Rb, Cs and NH"4)

The description is presented of binary phase diagrams of titanium alloyed with the following elements: silver, aluminium, arsenic, gold, boron, barium, beryllium, bismuth, carbon, calcium, cadmium, cobalt, chromium, copper, iron, gallium, germanium, hydrogen, hafnium, indium, iridium, potassium, lithium, magnesium, manganese, molybdenum, nitrogen, sodium, niobium, nickel, oxygen, osmium, phosphorus, lead, palladium, platinum, plutonium, rhenium, lanthanium, cerium, preseodymium, neodymium, gadolinium, erbium, terbium, thulium, lutetium, rhodium, ruthenium, scandium, silicon, tin, strontium, tantalum, technetium, thorium, uranium, vanadium, tungsten, yttrium, ytterbium, zinc and zirconium.

Activation cross sections of deuteron-induced nuclear reactions on hafnium

Influence of alkali elements on formation, composition, solubility and region of stability of complex hafnium sulfates, separated in the HfO"2-H"2SO"4-Me"2SO"4-H"2O (Me-Na, K, Rb, Cs and NH"4 group) systems is studied. In all cases hafnium forms the complex sulfates of three types differing by basicity or ratio HfO"2:SO"3 1:1, 1:1.5, 1:2. Three basic and three medium sulfates are crystallized in the systems with sodium; with rubidium, cesium and ammonium - two basic and two medium sulfates and with potassium - two basic and one medium salts. Anhydrous salts do not form in the investigated systems. Potassium salt approximately 0.3% according to HfO"2 is characterized by minimum solubility from the salts of 2HfOSO"4x(1-3)Me"2SO"4x(4-6)xH"2O while solubility of the same salts with rubidium, cesium and sodium increases from (0.25-1.0); (0.5-1.5) till (1.0-5)% according to HfO"2 correspondingly.

1982-01-01

Satellite power study (SPS) concept definition study (exhibit D). Volume 1: executive summary. Final report

Experimental excitation functions for deuteron-induced reactions up to 20 MeV on high purity natural hafnium were measured with the activation method using a stacked foil irradiation technique. Metallic hafnium foils with thickness of 10 #mu#m were stacked together with 50 #mu#m thick aluminium and 12 #mu#m thick titanium foils. The aluminium foils served as energy absorber while the titanium foils were used to monitor the energy and intensity of the bombarding deuteron beam. From a detailed remeasurement of the complete excitation function of the "n"a"tTi(d,x)"4"8V monitor reaction it was possible to adopt the proper incident energy and beam intensity by comparing the results with the recommended values. High resolution off-line gamma-ray spectrometry was applied to assess the activity of each foil. From the measured activity independent and/or cumulative elemental or isotopic cross section data for production of Ta, Hf and Lu radioisotopes by ...

2010-11-15

Zirconium for superior corrosion resistance

Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

1981-03-01

Transmutations in fusion test facilities

Zirconium is a transition element located along with sister elements titanium and hafnium in Group IVB of the periodic table. It is grayish white metal, with a density somewhat less than carbon steel. Zirconium is the ninth most common metallic element in the earth's crust, and is more abundant than zinc, lead, nickel, or even copper. Zirconium is exceptionally resistant to corrosion by many common acids and alkalis. It is resistant to most organic acids, such as formic, acetic, lactic, and oxalic acids. It also has a high resistance to localized forms of corrosion, such as pitting, crevice corrosion, and stress corrosion cracking. Its corrosion resistance is caused by the formation of a dense, tenaciously adherent, chemically inert oxide film on the surface. This oxide film protects the base metal from both chemical and mechanical attack at temperatures up to about 400 C (750 F). This article describes zirconium's formability, machinability, corrosion resistance, ...

Science & Technology Review July/August 2005

Using an expanded nuclear data base, the transmutation of PCA, AMCR33 (a reduced activation austenitic steel), HT-9, Rafer2 (a reduced activation ferritic steel), V-15%Cr-5%Ti alloy, and SiAlON (a ceramic) were calculated for two positions in the Fast Flux Test Facility (FFTF), three positions in the High Flux Isotope Reactor (HFIR), and the first wall position of both the STARFIRE and MARS conceptual fusion reactors. The peripheral test (PTP) position, and to a lesser extent the radial beryllium (RB) position, of HFIR show significant transmutations which are often in the opposite direction to the transmutations in the fusion conceptual designs. The positions in FFTF, as well as the hafnium covered location in the HFIR RB position show relative minor transmutations.

1986-04-01

Physicochemical investigation of the behavior of elements in chloride melts in the presence of solid phases based on phosphates of polyvalent elements. II. Behavior of strontium and barium

This journal contains the following articles (1) The Grand Challenge of Thermonuclear Ignition--Commentary by Edward I. Moses; (2) Orchestrating the World's Most Powerful Laser--The computer control system for the National Ignition Facility will soon have about 1.4-million lines of code running on more than 750 computers; (3) A Randon Walk through Time and Space--Albert einstein's 1905 papers on Brownian motion, random fluctuations, and statistical mechanics are fundamental to many Livermore research projects; (4) The Search for Methane in Earth's Mantle--Scientists are discovering that Earth's mantle may have untapped reserves of methane; and (5) Testing the Physics of Nuclear Isomers--Results from a tri-laboratory project contradict claims of accelerated release of energy from the nuclear isomer hafnium-178.

2005-06-14

Anisotropy of the structure and mechanical properties of low-alloy tungsten

The distribution of the alkaline earth elements strontium and barium between the solid phases of phosphates of transition elements of group 4 and chloride melts was studied. The distribution coefficients of strontium and barium were found at T = 700-800/sup 0/C. Phosphates of the type NaM/sub 2//sup (IV)/(PO/sub 4/)/sub 3/, where M/sub (IV)/ represents titanium, zirconium, and hafnium, were used as the solid phases. It was established that there is an enrichment of the precipitates with the distributed components. The distribution coefficient depends on the nature of the solid phase and the temperature. It was suggested that M/sup (II)/ x M/sub 4//sup (IV)/(PO/sub 4/)/sub 6/ is formed in processes of distribution, where M/sup (II)/ represents Sr, Ba.

1987-07-01

The potential of III-V semiconductors as terrestrial photovoltaic devices

The authors examine the relationship of the structure and mechanical properties of similar alloys of tungsten with rhenium produced by the powder metallurgy method by sintering powders. Since the alloys were deformed by rolling, we examine the effect of the resultant anisotropy of the structure on the properties of the metal in various directions. The tests were conducted on an alloy of tungsten with 2 wt.% rhenium and, for comparison purposes, an alloy of tungsten with additions of oxides of yttrium and hafnium. The mechanical properties of the alloys, i.e., strength, cracking resistance, cold shortness temperature, were determined in the bend test. Structural examination was carried out using an optical microscope, electron scanning microscopy, and the method of transmission electron microscopy.

1987-12-01

Low concentration ratio solar array for low Earth orbit multi-100kW application. Volume 2: Drawings. Final Report

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article ...

2006-07-01

Low concentration ratio solar array for low Earth orbit multi-100 kW application. Volume 1: Design, analysis and development tests. Final Report

A preliminary design effort directed toward a low concentration ratio photovoltaic array system based on 1984 technology and capable of delivering multi-hundred kilowatts (300 kW to 100 kW range) in low Earth orbit is described. The array system consists of two or more array modules each capable of delivering between 113 kW to 175 kW using silicon solar cells or gallium arsenide solar cells, respectively. The array module deployed area is 1320 square meters and consists of 4356 pyramidal concentrator elements. The module, when stowed in the Space Shuttle's payload bay, has a stowage volume of a cube with 3.24 meters on a side. The concentrator elements are sized for a geometric concentration ratio (GCR) of six with an aperture area of 0.5 meters x 0.5 meters. Drawings for the preliminary design configuration and for the test hardware that was fabricated for design evaluation and test are provided.

1982-07-01

Generation of ammonia plasma using a helical antenna and nitridation of GaAs surface

A preliminary design effort directed toward a low concentration ratio photovoltaic array system capable of delivering multihundred kilowatts (300 kW to 1000 kW range) in low earth orbit is described. The array system consists of two or more array modules each capable of delivering between 113 kW to 175 kW using silicon solar cells or gallium arsenide solar cells, respectively. The array module deployed area is 1320 square meters and consists of 4356 pyramidal concentrator elements. The module, when stowed in the Space Shuttle's payload bay, has a stowage volume of a cube with 3.24 meters on a side. The concentrator elements are sized for a geometric concentration ratio (GCR) of six with an aperture area of .25 sq. m. The structural analysis and design trades leading to the baseline design are discussed. It describes the configuration, as well as optical, thermal and electrical performance analyses that support the design and overall performance estimates ...

1983-07-01

Diffusion mechanism of implanted Be in GaAs

Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that by N2 plasma.

2003-05-15

Solid-gas equilibria in CaSO/sub 3/-H/sub 2/O/sub (g)/ system and Lewis-acid-base alloys

The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, all as a function of temperature, have been deduced from the ...

2008-01-15

Quinary metallic glass alloys

The role played by calcium sulfite in the flue gas desulfurization of lime/limestone scrubbers makes it desirable to work out its thermodynamic properties. A thermogravimetric apparatus was used to study the equilibria between calcium sulfite hemihydrate and calcium sulfite anhydrite under different conditions. Efforts were made to analyze the difficulties encountered in the dynamic approach to equilibration after calcium sulfate dihydrate failed in calibration of the apparatus. Finally, the kinetics and thermodynamics for the dissociation of calcium sulfite hemihydrate were examined. The confirmation of Engel-Brewer's correlation between the electronic configuration and crystal structure in metallic systems has long been pursued in this group by studying the Lewis-acid-base interactions. Tantalum-iridium alloys of different compositions were brought into equilibrium with various steam/hydrogen mixtures in the same thermogravimetric setup. Although the kinetics is limited by ...

1981-10-01

1 2 3

High temperature strengthening mechanism of hafnium carbide in a tungsten-rhenium matrix

At least quinary alloys form metallic glass upon cooling below the glass transition temperature at a rate less than 10.sup.3 K/s. Such alloys comprise zirconium and/or hafnium in the range of 45 to 65 atomic percent, titanium and/or niobium in the range of 4 to 7.5 atomic percent, and aluminum and/or zinc in the range of 5 to 15 atomic percent. The balance of the alloy compositions comprise copper, iron, and cobalt and/or nickel. The composition is constrained such that the atomic percentage of iron is less than 10 percent. Further, the ratio of copper to nickel and/or cobalt is in the range of from 1:2 to 2:1. The alloy composition formula is: (Zr,Hf).sub.a (Al,Zn).sub.b (Ti,Nb).sub.c (Cu.sub.x Fe.sub.y (Ni,Co).sub.z).sub.d wherein the constraints upon the formula are: a ranges from 45 to 65 atomic percent, b ranges from 5 to 15 atomic percent, c ranges from 4 to 7.5 atomic percent, d comprises the balance, d.multidot.y is less than 10 atomic percent, and x/z ...

1998-01-01

High temperature strengthening mechanism of hafnium carbide in a tungsten-rhenium matrix

The interrelationship between the testing temperature and HfC strength increment of an arc-melted W-3.6Re-0.4HfC was determined from 1950 K to 2980 K in a vacuum of better than 1.3{times}10{sup {minus}5} Pa (10{sup {minus}7} torr). The present research was focused on the characteristic temperature at which the rapid coarsening of HfC particles occurred and the effect of the second-phase particle size on the high temperature strength properties of this material. It was found that the HfC particle strengthening was effective in a W-Re matrix up to a characteristic temperature of 2450 K in the short-term tensile test. Carbon was found to be the rate-limiting solute in the HfC particle growth. The strength of HfC strengthened alloy at temperature above 0.5 T{sub m} is proportional to the square root of particle volume fraction. The yield strengths of W-3.6Re-0.26HfC calculated based on the particle statistical distribution had good agreement with the experimental values from 1950 K to 2980 ...

1991-01-01

Electrochemical corrosion behavior of alloy 400: Intergranular corrosion in acidic Na_2SO_4 solutions

The interrelationship between the testing temperature and HfC strength increment of an arc-melted W-3.6Re-0.4HfC was determined from 1950 K to 2980 K in a vacuum of better than 1.3x10"-"5 Pa (10"-"7 torr). The present research was focused on the characteristic temperature at which the rapid coarsening of HfC particles occurred and the effect of the second-phase particle size on the high temperature strength properties of this material. It was found that the HfC particle strengthening was effective in a W-Re matrix up to a characteristic temperature of 2450 K in the short-term tensile test. Carbon was found to be the rate-limiting solute in the HfC particle growth. The strength of HfC strengthened alloy at temperature above 0.5 T_m is proportional to the square root of particle volume fraction. The yield strengths of W-3.6Re-0.26HfC calculated based on the particle statistical distribution had good agreement with the experimental values from 1950 K to 2980 K. Besides, an addition of ...

1991-01-06

A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

The influence of heat treatments on the anodic polarization behavior of alloy 400 in acidic Na_2SO_4 solutions with different pH values and chloride contents has been studied. Alloy 400 is susceptible to intergranular corrosion (IGC) in 0.5 N Na_2SO_4 solution (pH 3) containing 0.2% CuCl_2. For the same heat treatment (soaking for one hour at 900 C), the extent of IGC appears to be significantly affected by the cooling rate, which is greater for faster cooling (e.g., water quenching). Aging the water-quenched alloy at 500 C enhances IGC susceptibility, and aging at higher temperatures imparts resistance to IGC. Note that addition of small amounts of hafnium has a beneficial effect on the resistance to IGC of alloy 400 under similar exposure conditions. An attempt has been made to rationalize the observations in terms of segregation of sulfur and phosphorus to the grain boundaries.

Schottky barrier and homojunction gallium arsenide solar cells

This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The ...

1999-04-01

PVT -- A photovoltaic/thermal concentrator total energy system: Final phase 1 project report. Building opportunities in the U.S. for photovoltaics (PV:BONUS) Two

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. Homojunction GaAs solar cells were fabricated using several techniques. One involved ...

1983-01-01

Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

United Solar completed its Phase 1 report and its proposal for Phase 2 of the PVBONUS Two program at the end of March 1998. At the same time, it also completed and submitted a proposal to the California Energy Commission PIER program for additional funding to cost-share development and testing of a pre-production model of the PVT-14. It was unsuccessful in both of these proposed efforts. While waiting for the proposal decisions, work continued in April and May to analyze the system design and component decisions described below. This document is a final summation report on the Phase 1 effort of the PVBONUS Two program that describes the key technical issues that United Solar and its subcontractor, Industrial Solar Technology Corporation, worked on in preparation of a Phase 2 award. The decisions described were ones that will guide the design and fabrication of a pre-production prototype of a 1500:1 mirrored concentrator with gallium arsenide cells when United solar ...

1998-12-31

M-shell x-ray production by 0.6--4.0-MeV protons in ten elements from hafnium to thorium

The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with {open_quotes}single carrier{close_quotes} response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix ...

1995-11-01