British Library Electronic Table of Contents (United Kingdom)
Abstract High-crystallinity hierarchical anatase TiO2 hollow spheres were prepared by a high-temperature (350 C) and non-aqueous solvothermal method in the absence of water, templates, or additives. The hollow structures were assembled from highly crystallized TiO2 nanoparticles and exhibit superior photocatalytic properties relative to those of Degussa P25 TiO2 under irradiation with UV light. The influence of reaction temperature on the crystallinity, morphology, crystallite shape and size, band gap, specific surface area, and pore size distribution of TiO2 has been studied in detail. It is evident that reaction temperature is the most important factor to increase the crystallinity of TiO2 in order to improve its charge transfer and transport properties, which are important in photocatal...
2011-01-01
Synthesis and photo-degradation application of WO3/TiO2 hollow spheres.
A WO(3)/TiO(2) composite, hollow-sphere photocatalyst with average diameter of 320 nm and shell thickness of 50 nm was successfully prepared using a template method. UV-vis diffuse reflectance spectra illustrated that the main absorption edges of the WO(3)/TiO(2) hollow spheres were red-shifted compared to the TiO(2) hollow spheres, indicating an extension of light absorption into the visible region of the composite photocatalyst. The WO(3) and TiO(2) phases were confirmed by X-ray diffraction analysis. BET isotherms revealed that the specific surface area and average pore diameter of the hollow spheres were 40.95 m(2)/g and 19 nm, respectively. Photocatalytic experiments indicate that 78% MB was degraded by WO(3)/TiO(2) hollow spheres under visible light within 80 min. Under the same conditions, only 24% MB can be photodegraded by TiO(2). The photocatalytic mineralization of MB, catalyzed by TiO(2) and WO(3)/TiO(2), proceeded at a significantly higher rate under UV irradiation than ...
2011-02-22
Thin TiO2 grown by metal?organic chemical vapor deposition on (NH4)2S x -treated InP
British Library Electronic Table of Contents (United Kingdom)
The electrical characteristics of thin TiO2 films prepared by metal?organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO2 film of 4.7?nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8?10?2 and 1.1?10?4?A/cm2 at +2 V bias and 1.6?10?1 and 8.3?10?4?A/cm2 at ?2?V bias. The lower leakage currents of TiO2 with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5?1013?cm2, respectively. The lowest mid-gap interface state density is around 7.6?1011?cm?2?eV?1. The equivalent oxide thickness is 0.52?nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6?nm and reaches 9.3?MV/cm at 2.5?n...
2011-01-01
Structural stability of TiO_2 at high pressure in density-functional theory based calculations
International Nuclear Information System (INIS)
A new study on the pressure-induced phase transitions of TiO_2 has been performed using all-electron density-functional theory based computations with the projector augmented wave and the linearized augmented plane wave methods considering five experimentally observed structures. The static results yield a picture that is consistent with experiments, i.e., phase transitions with pressure are predicted as rutile #-># monoclinic baddeleyite (MI) #-># orthorhombic I (OI) #-># cotunnite (OII) on compression, and OII #-># OI #-># MI #-># columbite (TiO_2II) on decompression. The elasticities of these five polymorphs are compared. Except for the baddeleyite structure, which is considerably softer than the other polymorphs, all phases show a zero pressure bulk modulus in the range of 200-240 GPa, consistent with compression results and the single crystal elastic constant; on the basis of these results we can say that the cotunnite phase is not a superhard TiO_2 polymorph as ...
2010-07-28
XAFS studies of nanocomposite systems
Nanosized particles are important because of their unique properties, different from the bulk, which leads to their enhanced catalytic, photocatalytic and electronic properties. This work has dealt with three different nanoparticle systems in the context of three different aspects of nanoparticle properties: (a) photocatalytis (TiO2/metal) system, (b) luminescence (CdSe) (c) alloying (Pt-Ag and Pd-Ag). The initial photocatalytic enhancement obtained by adding noble metal on semiconductor nanoparticles, degrades as fast as in 15 minutes and questions their long-term performance. XANES measurements on such irradiated systems like TiO2/Au, TiO2/Pt, TiO2/Ir indicates a positive oxidation state of these noble metals which renders them as recombination centers for photo-excited electrons and explains the decreased photocurrent. The oxidation is caused by holes. The EXAFS results also indicate a change of the interfacial structure under the effect of UV-irradiation, thus ...
British Library Electronic Table of Contents (United Kingdom)
A new series of anatase TiO2 hollow structures were prepared by a facile hydrothermal process. When the hydrothermal time was increased from 20min to 72h, the resulting TiO2 solid spheres gradually transformed into TiO2 hollow spheres with higher surface crystallinity and exposed {001} facets. The as-prepared TiO2-72h sample exhibited the highest activity comparing to other TiO2-based samples and commercial product Degussa P-25 towards the selective photocatalytic oxidation of toluene to benzaldehyde. Such great photocatalytic performance was mainly attributed to enhanced UV-adsorption and better charge separation efficiency due to higher surface crystallinity of TiO2-72h.
2011-01-01
Synthesis and electrorheological characteristics of sea urchin-like TiO2 hollow spheres
British Library Electronic Table of Contents (United Kingdom)
TiO2 hollow microspheres with sea urchin-like hierarchical architectures were synthesized by a simple hydrothermal method. The as-synthesized hollow microspheres with hierarchical architectures consisting of many rhombic building units exhibit high specific surface area. Electrorheological (ER) properties of hierarchical hollow TiO2-based suspension were investigated under steady and oscillatory shear. The hollow TiO2-based suspensions show much higher yield stress and elasticity than pure TiO2 suspension at the same electric field strength. This phenomenon was elucidated well in view of their dielectric spectra analysis. The sea urchin-like architectures result in stronger interfacial polarization of hollow TiO2 suspension upon an electric field, showing higher ER activity. Also, hollow i...
2011-01-01
Single Molecule Source Reagents for CVD of Beta Silicon Carbide.
Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...
1991-01-01
Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study
UK PubMed Central (United Kingdom)
Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available
With the help of self-assembly, thermal sintering, selective etching techniques and sol-gel process, the non-close packed (ncp) face-centered cubic (fcc) photonic crystals of titanium dioxide (TiO2) hollow spheres connected by TiO2 cylindrical tubes have been fabricated using silica template. The photonic bandgap calculations indicate that the ncp structure of TiO2 hollow spheres was easier to open the pseudogaps than close packed system at the lowest energy. PMID:17097102
2006-10-21
Lateral optical confinement of the heterostructure semiconductor Raman laser
This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 ..mu..m and Al/sub 0.1/Ga/sub 0.9/P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.
1987-11-02
Influence of some selected organic molecules on intensity of luminescence of TiO2:Eu3+ electrodes
International Nuclear Information System (INIS)
Eu3+ ions are anchored on TiO2 matrix by coupling with 2,2'-bipyridyl 4,4'-dicarboxylic acid. Five different luminescence centers are observed for TiO2|2,2'-bipyridyl 4,4'-dicarboxylic acid|Eu3+ electrodes due to electron transitions between d and f orbitals. Photo-luminescence of TiO2|2,2'-bipyridyl 4,4'-dicarboxylic acid|Eu3+ electrodes is increased by attaching 2-thenoyltrifluoroacetone to Eu3+ ions. Immersion of TiO2|2,2'-bipyridyl 4,4'-dicarboxylic acid|Eu3+|2-thenoyltrifluoroacetone electrodes in propylsulfide is found to be further increased intensities of luminescence bands by a factor of three.
2009-05-01
A simple template-free approach to TiO2 hollow spheres with enhanced photocatalytic activity.
Mesporous anatase-phase TiO(2) hollow spheres with high photocatalytic activity were prepared by hydrothermal treatment and self-transformation of amorphous TiO(2) solid spheres in an NH(4)F aqueous solution. The prepared samples were characterized by X-ray diffraction, scanning and transmission electron microscopy, X-ray photoelectron spectroscopy, N(2) adsorption-desorption isotherms and UV-vis absorption spectroscopy. The photocatalytic activity was evaluated by photocatalytic oxidation decomposition of acetone in air under UV irradiation. It is found that F(-) plays an essential role in the formation of TiO(2) hollow spheres. F(-) not only induces the hollowing of TiO(2) solid spheres, but also promotes the crystallization of anatase TiO(2) nanocrystals. A possible formation mechanism for the TiO(2) hollow spheres by localized Ostwald ripening or chemically induced self-transformation is proposed based on the experimental observations. Furthermore, the molar ratios of NH(4)F to ...
2010-05-27
A simple one-step method to fabricate hierarchically porous TiO2/Pd composite hollow spheres without any template was developed by using solvothermal treatment. Pd nanoparticles (2-5 nm) were well dispersed in the mesopores of the TiO2 hollow spheres via in-situ reduction. In our experiment, polyvinylpyrrolidone played an important role in the synthetic process as the reducing agent and the connective material between TiO2 and Pd nanoparticles. HF species generated from solvothermal reaction leaded to the formation of TiO2 hollow spheres and Ostwald ripening was another main factor that affected the size and structure of the hollow spheres. The as-prepared TiO2/Pd composite hollow spheres exhibited high electrocatalytic activity towards the reduction of H2O2. The sensitivity was about 226.72 ?A mM-1 cm-2 with a detection limit of 3.81 ?M at a signal-to-noise ratio of 3. These results made the hierarchically porous TiO2/Pd composite a promising platform for fabricating new nonenzymic ...
2010-10-01
Buried-heterostructure semiconductor Raman laser with threshold pump power less than 1 W
Energy Technology Data Exchange (ETDEWEB)
The low-power operation of a semiconductor buried-heterostructure Raman laser is reported. We are developing these devices for very wide-band optical communication in the terahertz frequency region. It has a structure with a GaP active layer and Al{sub {ital x}}Ga{sub 1{minus}{ital x}}P cladding layers, which are grown by the temperature-difference method under controlled vapor pressure. By making the stripe width 30--40 {mu}m, we have obtained a threshold pump power of 500 mW. A low-threshold semiconductor Raman laser can be pumped by semiconductor injection lasers. We have measured the optical loss of the waveguide and detected the contribution from scattering and leakage at heterointerfaces.
1989-12-01
Synthesis and photo-degradation application of WO3/TiO2 hollow spheres
British Library Electronic Table of Contents (United Kingdom)
A WO3/TiO2 composite, hollow-sphere photocatalyst with average diameter of 320nm and shell thickness of 50nm was successfully prepared using a template method. UV-vis diffuse reflectance spectra illustrated that the main absorption edges of the WO3/TiO2 hollow spheres were red-shifted compared to the TiO2 hollow spheres, indicating an extension of light absorption into the visible region of the composite photocatalyst. The WO3 and TiO2 phases were confirmed by X-ray diffraction analysis. BET isotherms revealed that the specific surface area and average pore diameter of the hollow spheres were 40.95m^2/g and 19nm, respectively. Photocatalytic experiments indicate that 78% MB was degraded by WO3/TiO2 hollow spheres under visible light within 80min. Under the same conditions, only 24% MB can ...
2011-01-01
We prepared submicron-scale spherical hollow particles of anatase TiO2 by using a polystyrene-bead template. The obtained particles were very uniform in size, with a diameter of 490 nm and a shell thickness of 30 nm. The Brunauer-Emmett-Teller surface area measurements revealed a large value of 70 m2/g. The photocatalytic property was investigated by the complete decomposition of gaseous isopropyl alcohol under UV irradiation. It was indicated that the activity of the hollow spheres was 1.8 times higher than that of the conventional P25 TiO2 nanoparticles with a diameter of 30 nm. Furthermore, we fabricated a dye-sensitized solar cell (DSC) using an electrode of the TiO2 hollow spheres, and examined the photovoltaic performance under simulated sunlight. Although the per-area efficiency was rather low (1.26%) because of a low area density of TiO2 on the electrode, the per-weight efficiency was 2.5 times higher than those of the conventional DSCs of TiO2. PMID:18088147
2007-12-19
Dye-sensitized solar cells based on anatase TiO2 hollow spheres/carbon nanotube composite films
British Library Electronic Table of Contents (United Kingdom)
Dye-sensitized solar cells (DSSCs) based on anatase TiO2 hollow spheres (TiO2HS)/multi-walled carbon nanotubes (CNT) nanocomposite films are prepared by a directly mechanical mixing and doctor blade method. The prepared samples are characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, UV-vis absorption spectroscopy and N2 adsorption-desorption isotherms. The photoelectric conversion performances of the DSSCs based on TiO2HS/CNT composite film electrodes are also compared with commercial-grade Degussa P25 TiO2 nanoparticles (P25)/CNT composite solar cells at the same film thickness. The results indicate that the photoelectric conversion efficiencies () of the TiO2HS/CNT composite DSSCs are dependent on CNT loading in the electrodes. A small amou...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir{sub 3}Si{sub 5} is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru{sub 2}Si{sub 3}, Os{sub 2}Si{sub 3}, and OsSi{sub 2}.
2006-06-29
International Nuclear Information System (INIS)
The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir_3Si_5 is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru_2Si_3, Os_2Si_3, and OsSi_2.
2006-06-29
Two-step template-free route for synthesis of TiO2 hollow spheres
British Library Electronic Table of Contents (United Kingdom)
The TiO2 hollow microspheres were prepared by microwave-assisted solvothermal treatment without template. The morphology and the phase of TiO2 hollow microspheres were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), high resolution transmission electron microscopy (HR-TEM), and BET surface areas. The results show that the particles have hollow structures and the shell was covered by nanocrystals and have higher specific surface area. The possible formation mechanism of hollow TiO2 spherical structures has simply been proposed. The activity was evaluated by the photocatalytic degradation of methyl orange (MO). The results show that the particles having specific surface area show higher photocatalytic activity. It can be attribute to the doped ...
2011-01-01
SCC mitigation method for BWR materials by TiO2 technique
International Nuclear Information System (INIS)
TiO2 addition into boiling water reactor (BWR) primary system is being developed as a method to mitigate stress corrosion cracking (SCC) of the BWR structural materials. This technique aims for electrochemical corrosion potential (ECP) decrease of reactor materials by photo-excitation reaction under Cherenkov irradiation. ECP measurement tests have been conducted in the test loop in BWR to investigate the feasibility of the SCC mitigation method with TiO2. The test results showed that the ECP of TiO2 deposited materials was decreased to 2 technique was confirmed to be feasible as a SCC mitigation method for BWR structural materials without hydrogen injection. (author)
2008-10-13
International Nuclear Information System (INIS)
At atmospheric pressure and room temperature, dielectric barrier discharge induced plasma oxidation for achieving supported TiO2 photocatalysts derived from TiCl4 adsorbed onto ?-Al2O3 pellets was studied. The supported TiO2/?-Al2O3photocatalysts prepared by a cyclic 'adsorption-discharge' approach, without requirement of heat treatment, exhibit high activity in the photocatalytic degradation reaction of formaldehyde. The mass spectra and optical emission spectra during O2/Ar discharge for oxidizing the adsorbed-state TiCl4 were measured. The mechanism for the TiO2 formation from adsorbed-state TiCl4 by plasma oxidation was discussed.
2007-03-21
A simple one-step fabrication of micrometer-scale hierarchical TiO2 hollow spheres
British Library Electronic Table of Contents (United Kingdom)
Hierarchical TiO2 hollow spheres had been prepared based on bubble templates by a simple one-step hydrothermal method. The diameter of hollow spheres was about 700nm and the shell thickness of them was 69nm. They were composed of similar spindle- or needle-like building units. Furthermore, hydrothermal time had an important influence on the morphology and crystallinity of hollow spheres. Moreover, the UV-Vis diffuse reflectance spectra of TiO2 hollow spheres heated at 150^oC for 10h showed the strongest absorption in the UV-Vis region and the Raman spectrum demonstrated the anatase sample. Additionally, a possible formation mechanism of TiO2 hollow spheres was proposed. So this novel and simple method would provide a development direction to fabricate all kinds of inorganic hollow spheres ...
2010-01-01
A novel single-step synthesis of N-doped TiO"2 via a sonochemical method
British Library Electronic Table of Contents (United Kingdom)
A novel single-step synthetic method for the preparation of anatase N-doped TiO"2 nanocrystalline at low temperature has been devoleped. The N-doped anatase TiO"2 nanoparticles were synthesized by sonication of the solution of tetraisopropyl titanium and urea in water and isopropyl alcohol at 80^oC for 150min. The as-prepared sample was characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and UV-vis absorption spectrum. The product structure depends on the reaction temperature and reaction time. The photocatalytic activity of the as-prepared photocatalyst was evaluated via the photodegradation of an azo dye direct sky blue 5B. The results show that the N-doped TiO"2 nanocrystalline prepared via sonication exhibit an excellent photocatalytic...
2011-01-01
Simplified electrostatic model for band-gap underestimates in the local-density approximation
An estimate of the undercounted electrostatic energy terms in local-density-functional total-energy calculations for nonmetallic systems with separated electron-hole pairs is used to derive a simplified correction to density-functional - theory band gaps. The correction is evaluated for Ne, Ar, Kr, LiF, NaCl, CsCl, MgO, CaS, BaS, C, AlP, and Si. The band-gap errors are reduced from 40-50% to 10-15% for most of the systems studied. Conduction-band corrections are shown to be nearly as large as valence-band corrections in free-electron-like semiconductors. 28 references, 1 figure.
1985-04-15
The sunlight-induced photocatalytic oxidation of aqueous benzene on TiO(2)-supported gold nanoparticles was considerably improved when the reaction was conducted under a CO(2) atmosphere. 13% yield and 89% selectivity of phenol was obtained on P25-supported gold nanoparticles under 230 kPa of CO(2). PMID:21952312
2011-09-26
Large-scale fabrication of TiO2 hierarchical hollow spheres.
In this Communication, we report the fabrication of well-crystallized rutile-phase TiO2 hollow spheres using potassium titanium oxalate as the precursor. The spheres exhibited unique three-dimensional hierarchical architectures and demonstrated a significantly improved photocatalytic performance. The synthetic strategy used in this process represents a general approach and therefore may contribute to the formation mechanisms of hollow nanostructures. PMID:16634578
2006-05-01
Quasiparticle band structure of thirteen semiconductors and insulators
By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al{sub 0.5}Ga{sub 0.5}As and In{sub 0.53}Ga{sub 0.47}As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, {ital E}({Gamma}{sub 1{ital c}}) of AlP, {ital E}({ital L}{sub 1{ital c}}) of AlAs, and {ital E}({ital L}{sub 1{ital c}}) of AlSb are discussed and attributed to various experimental ...
1991-06-15
Quasiparticle band structure of thirteen semiconductors and insulators
International Nuclear Information System (INIS)
By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al_0_._5Ga_0_._5As and In_0_._5_3Ga_0_._4_7As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, E(#GAMMA#_1_c) of AlP, E(L_1_c) of AlAs, and E(L_1_c) of AlSb are discussed and attributed to various experimental uncertainties. Several other quasiparticle-excitation-related properties are also examined ...
International Nuclear Information System (INIS)
Full text: Pigments possessing the ability to confer high solar reflectance have received considerable attention in recent years. The inorganic class of NIR reflective pigments are mainly metal oxides and are primarily employed in two applications: (i) visual camouflage and (ii) reducing heat build up. More than half of the solar radiation consists of near-infrared radiation (52%), the remaining being 43% visible light and 5% ultraviolet radiation. Over heating due to solar radiation negatively affects comfort in the built environment and contributes substantially to electrical consumption for air conditioning and release of green house gases. A pigment which has strong reflections in the NIR region (780-2500 nm) can be referred to as a 'cool' pigment. However, most of the NIR reflective inorganic pigments particularly yellow (eg. cadmium yellow, lead chromate, chrome titanate yellow etc.) contain toxic metals and hence their consumption is being limited. Replacing them with ...
2010-11-24
International Nuclear Information System (INIS)
The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society
2000-02-07
A phenomenological model for the macroscopic characteristics of irradiated silicon
International Nuclear Information System (INIS)
The dependence of the carrier concentrations, of the resistivity and of the Hall coefficient of irradiated silicon on the neutron fluences has been investigated, starting from the supposition that the main phenomena induced by irradiation in the semiconductor bulk are shallow-donor removal and deep-centres creation. The free parameters of the model are initial doping of the starting material, the permitted energy level values of the radiation-induced centres in the semiconductor band gap and their introduction rates. The influence of each parameter on the calculated dependences is studied in detail, for three cases: one deep acceptor-like centre, two deep acceptors and one deep acceptor plus one deep donor-like centre. each of the three cases is discussed in correspondence with different experimental results.
British Library Electronic Table of Contents (United Kingdom)
Fe-doped TiO2 hollow spheres (Fe-THs) were synthesized by sol?gel process using carbon spheres as templates. The prepared samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV?vis diffuse reflectance spectrum (DRS), N2 adsorption?desorption isotherms, Electron paramagnetic resonance (EPR) spectroscopy and Photoluminescence emission spectroscopy (PL). UV?vis spectra showed that Fe3+ doping could extend the absorption edge to the visible region. EPR spectra showed that Fe3+ was incorporated into the crystal lattice of TiO2, which could inhibit the recombination of photo-induced electron?hole pairs and improve the photocatalytic activity. The photocatalytic activities of the prepared samples were evaluated for the degradation of dye Reactive Brillia...
2011-01-01
Interface-induced conversion of infrared to visible light at semiconductor interfaces
International Nuclear Information System (INIS)
Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.
Band parameters for III - V compound semiconductors and their alloys
International Nuclear Information System (INIS)
We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. ...
2001-06-01
Electronic structure and properties of boron phosphide and boron arsenide
International Nuclear Information System (INIS)
The composite wave variational version of the APW (augmented plane wave) method is used to obtain the electronic band structure of the compounds boron phosphide and boron arsenide at the high symmetry points #GAMMA#, X, and L. The tight binding interpolation scheme of Slater and Koster is used to calculate the rest of the band structure. The results show that both these materials are indirect band gap semiconductors. The density of states, and the imaginary part of the dielectric constant is also calculated. The theoretical results are compared with the reported experimental and theoretical data. (author).
Preparation of TiO2/NiO composite particles and their applications in dye-sensitized solar cells
British Library Electronic Table of Contents (United Kingdom)
This study investigates the applicability of n-type TiO2 and p-type NiO on the FTO-glass (Fluorine doped tin oxide, SnO2:F) substrate of the working electrode in a dye-sensitized solar cell (DSSC). The working electrode was designed and fabricated by depositing a film of TiO2/NiO composite particles, which were prepared by mixing the Ni powder with TiO2 particles using dry mixing method, on a FTO-glass substrate using a spin coating process. The working electrode was then immersed in the solution of N-719 (Ruthenium) dye at a temperature of 70degreeC for 6h. Moreover, a thin film of platinum (Pt) was deposited on the FTO-glass substrate of the counter electrode using an E-beam evaporator. Finally, the DSSC was assembled, and the short-circuit photocurrent, the open-circuit photovoltage and...
2011-01-01
Physical properties of shape-controlled TiO_2 nanoparticles
International Nuclear Information System (INIS)
The synthesis of narrowly dispersed nanocrystalline TiO_2 was investigated with a surfactant aided solvothermal synthetic method in toluene solutions. When a sufficient amount of titanium isopropoxide, Ti[OCH(CH_3)_2]_4 (TIP), was added to the solution, the shapes of TiO_2 nanoparticles changed from spheres to rods. The aggregated microstructures of the nano-sized TiO_2 in systems of spheres, rods, and mixtures of spheres and rods was studied using TEM. The morphological shape of the aggregation was described in terms of the fractal dimensions. We used a box-counting method to get the fractal dimension of these systems. The fitted fractal dimensions for spheres, sphere/rod mixtures, and rods are D = 1.54, D = 1.81, and D = 1.89, respectively. The fractal dimension changed from 1.54 to 1.9 with the TIP/toluene ratio, indicating that the growth mechanism for aggregations showed different behaviors.
2005-11-01
International Nuclear Information System (INIS)
Sodium benzene sulfonate (BS) was decomposed in aqueous TiO_2 dispersions under highly concentrated solar light illumination to examine the photocatalytic characteristics of a parabolic round concentrator (PRC) reactor to degrade the pollutant without visible light absorption. The effects of such operational parameters as initial concentration, volume of the aqueous BS solution, oxygen purging, and TiO_2 loading on the kinetics of decomposition of BS were investigated. An effective photodegradation necessitates a suitable combination of initial volume and concentration of BS solution. Relative to atmospheric air, oxygen purging significantly accelerates the degradation process at high initial concentrations of BS (0.40 mM or 1.0 mM). Optimal TiO_2 loading was 9 gl "-"1, greater than previously reported. Elimination of TOC (total organic carbon) followed pseudo first-order kinetics in the initial stages of the photodegradation process. The relative photonic efficiency for the ...
British Library Electronic Table of Contents (United Kingdom)
Monodisperse europium-activated titania hollow phosphors had been synthesized by a facile one-pot hydrothermal method using carbon spheres as hard templates. Samples were characterized by X-ray powder diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, energy dispersive spectrometer and photoluminescence spectrum. The strongest emission intensity was observed with TiO2:Eu0.2 hollow spheres and TiO2:Eu0.2 hollow spheres calcining at 550^oC. Moreover, the strongest excitation of TiO2:Eu0.2 hollow spheres transferred from 400 to 500^oC and the effective nonradiative energy transfer from the TiO2 hollow spheres host matrix to Eu^3^+ ions crystal field states was realized due to changes of crystalline field in the environment around Eu^3^+ ions occupying Ti^4^+ site...
2010-01-01
International Nuclear Information System (INIS)
Conduction-band electrons, formed by pulse radiolysis of Degussa P25 TiO_2 particles, have been monitored by time-resolved microwave conductivity and found to undergo equilibrium localization and eventual recombination at the particle surface. In the presence of isopropyl alcohol recombination is retarded due to surface hole scavenging. The particle bulk can then be pumped with mobile electrons, which survive for seconds.
Energy Technology Data Exchange (ETDEWEB)
The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO{sub 2}-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also ...
2006-12-05
International Nuclear Information System (INIS)
The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO_2-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also ...
2006-12-05
International Nuclear Information System (INIS)
The credibility of the model proposed by Ghosh in predicting the refractive indices of mixed semiconductor crystals of technological importance within their miscibility range as a function of band gap is demonstrated. The high-frequency refractive indices of four quaternary alloys Al_xGa_1_-_x_-_yIn_yP (y = 0.49, 0 #<=# x #<=# 0.51), InSb_xAs_1_-_x_-_yP_y (y = 2.2x, 0 #<=# x #<=# 0.313, 0 #<=# y #<=# 0.638), Cd_xZn_1_-_x_-_yHg_ySe (x + y = 1, 0.153 #<=# x #<=# 0.684, 0.316 #<=# y #<=# 0.847), and CdS_1_-_x_-_ySe_xTe_y (x + y = 1, 0.15 #<=# x #<=# 0.93, 0.07 #<=# y #<=# 0.85) are calculated according to the relation n"2-1 = A/(E_g + B)"2 where A is an energy gap dependent constant and B is a constant depending on crystal ionicity. The calculated values show excellent agreement with the experimental data thus justifying the validity of the model.
Optical characterization of long-term ordered and nanocrystalline GaP
International Nuclear Information System (INIS)
The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is reported from pure and doped GaP single ...
International Nuclear Information System (INIS)
The effects of hydrostatic pressure on the electronic band structure of the semiconductor mineral iron pyrite FeS_2 have been investigated theoretically by an ab initio full-potential linearized-augmented plane wave (FPLAPW) method within a local approximation (LDA/GGA) to the density functional theory. The calculations predict that at a pressure of 94.1 GPa the indirect band gap of pyrite FeS_2 vanishes and the material becomes a metal. This is due to the presence of the S-S and Fe-S bonds, which provide novel energy band distortions in the process of attaining the metallic state. Analysis indicates that, under increasing high pressure, the conduction bands (3p_z of sulfur and 3d_x_"2_-_y_"2+3d_x_y of iron) intrude downwards into the valence bands, which are predominantly 3d in nature. At normal pressure, the lattice constant, the bulk modulus, sulfur position parameter u, S-S bond length, and the indirect band gap of ...
2006-10-11
Unsymmetrically substituted n-type perylene bisimides with liquid crystalline properties
Energy Technology Data Exchange (ETDEWEB)
Perylene bisimides (PBIs) represent an important class of organic n-type semiconductors exhibiting a relatively high electron affinity among large-band-gap materials. Herein synthesis and characterization of several unsymmetrical N-substituted PBI dyes is presented and the thermotropic behavior, which is strongly affected by the respective N-substituents was investigated. Two different series of highly soluble and fluorescent derivatives have been synthesized: (1) PBIs bearing swallow-tailed alkyl chains, different in size or (2) one swallow-tailed alkyl chain and one branched oligoethylenglycolether. Synthesis of these PBIs is generally feasible by two distinct divergent synthesis approaches. Thermotropic behavior was studied by DSC, POM and XRD measurements. Inherent {pi}-{pi} interactions between cofacially orientated perylene molecules and the elliptic shape of the molecule favor the ordering in columns and self-organized architectures. ...
2009-07-01
Recent Progress in CdTe and CdZnTe Detectors
Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrodes. In this overview talk, we summarize (1) advantages and disadvantages of CdTe and CdZnTe semiconductor detectors and (2) technique for improving energy resolution and photopeak efficiencies. Applications of these ...
2001-01-01
Europium oxynitride ferromagnetic semiconductors
International Nuclear Information System (INIS)
At room pressure and temperature the system EuOsub(1-x)Nsub(x) has two solid-solubility ranges, each with the NaCl structure: for 0 =< x =< 0.30 the system is ferromagnetic and semiconducting above the Curie temperature; for 0.92 =< x <1 it is metallic. Conductivity and Seebeck voltages indicate intrinsic behaviour above 310 K with an energy gap that decreases with increasing x for 0 =< x =< 0.30. Magnetic susceptibilities are consistent with 4f"6 configurations at x europium ions per molecule and a ferromagnetic Curie temperature Tsub(C) that increases with x. Low-temperature transport measurements were made only for 0.20 =< x =< 0.30: a minimum in the electrical conductivity, approximately 30 K above Tsub(C) correlates well with the onset of an anomalous low-temperature crystal contraction and with deviations from a Curie-Weiss law typical of short-range magnetic order. Below Tsub(C) there is a metal-to-semiconductor ...
1978-01-01
Sunlight photocatalytic activity of CdS modified TiO2 loaded on activated carbon fibers
British Library Electronic Table of Contents (United Kingdom)
To improve the photocatalytic application performances of TiO2, in this work, firstly CdS modified Degussa P25 TiO2 (CdS/TiO2) composites were prepared by two methods, sol-gel method and precipitation method. Next they, sol-gel-CdS/TiO2 (sg-CdS/TiO2) and precipitation-CdS/TiO2 (pp-CdS/TiO2), were loaded on activated carbon fibers (ACFs) by dip-coating method using the sodium carboxymethyl cellulose as adhesives. The composites were characterized by XRD, UV-vis absorbance spectra, SEM, EDS and BET. The photocatalytic activities under sunlight were investigated by the degradation of methylene blue. The results showed that CdS/TiO2 composites were mainly composed of anatase-TiO2 and little CdS cubic phases. The absorption wavelengths of sg-CdS/TiO2 and pp-CdS/TiO2 composites were extended to ...
2010-01-01
Interface-induced conversion of infrared to visible light at semiconductor interfaces
Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al{sub {ital x}}Ga{sub 1{minus}{ital x}}InP{sub 2}; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. {copyright} {ital 1996 The American Physical Society.}
1996-08-01
Evidence for p-f mixing in U/sub 3/P/sub 4/ and U/sub 3/As/sub 4/ from optical spectroscopy
Energy Technology Data Exchange (ETDEWEB)
The near normal incidence reflectivity of the ferromagnets U/sub 3/P/sub 4/ and U/sub 3/As/sub 4/ and the isostructural but diamagnetic compounds Th/sub 3/P/sub 4/ and Th/sub 3/As/sub 4/ has been measured from 0.03 to 12 eV. Trithorium tetraphosphide and tetraarsenide are shown to be indirect gap semiconductors with gap energies of 0.43 and 0.39 eV, respectively. U/sub 3/P/sub 4/ and U/sub 3/As/sub 4/ display similar sets of p..-->..d transitions than the corresponding thorium compounds, however, they are shifted by 0.85 eV to lower photon energies. It is concluded that the uranium compounds are metals due to a merging of the valence p band into the 6d conduction band giving direct experimental evidence for a p-f mixing effect of the same size. Energy level schemes are derived.
1983-07-01
Evidence for p-f mixing in U"3P"4 and U"3As"4 from optical spectroscopy
International Nuclear Information System (INIS)
The near normal incidence reflectivity of the ferromagnets U"3P"4 and U"3As"4 and the isostructural but diamagnetic compounds Th"3P"4 and Th"3As"4 has been measured from 0.03 to 12 eV. Trithorium tetraphosphide and tetraarsenide are shown to be indirect gap semiconductors with gap energies of 0.43 and 0.39 eV, respectively. U"3P"4 and U"3As"4 display similar sets of p#->#d transitions than the corresponding thorium compounds, however, they are shifted by 0.85 eV to lower photon energies. It is concluded that the uranium compounds are metals due to a merging of the valence p band into the 6d conduction band giving direct experimental evidence for a p-f mixing effect of the same size. Energy level schemes are derived. (author).
1983-01-01
ZnO microsheet modified TiO2 nanoparticle composite films for dye-sensitized solar cells
British Library Electronic Table of Contents (United Kingdom)
Randomly oriented ZnO microsheets were successfully self-assembled on TiO2 nanoparticle (TN) film to act as the scattering layer via a cathodic electrodeposition process. The light scattering properties of ZnO microsheets were studied by UV-Vis spectrometer in the 400?800 nm wavelength range. It was found that ZnO microsheets exhibited excellent ability to scatter the incident light for ZnO microsheet-TiO2 nanoparticle (ZT) composite films. The results showed that dye-sensitized solar cells (DSSCs) fabricated with ZT composite films showed higher short-circuit density (J sc) and conversion efficiency than TN-based DSSCs, due to the light scattering properties of ZnO microsheets.
2010-01-01
International Nuclear Information System (INIS)
The intensity of erbium up-conversion luminescence could be limited by a saturation effect due to increased pump power. We studied the luminescence saturation of the 550 nm emission on erbium-doped, SiO_2-TiO_2 sol-gel powders under pulsed excitation at 979 and 1532 nm. From the latter, the up-converted luminescence intensity decreased with increasing excitation power, whereas no saturation was observed at 979 nm excitation. We proposed that the saturation effect is determined by the pump power, the erbium content and the lifetime of the corresponding first excited states at different pumping schemes.
2010-12-01
British Library Electronic Table of Contents (United Kingdom)
In this paper, multilayer oxide nanorods were deposited in the nanopores of anodic aluminum oxide (AAO) via solution infiltration followed by heat treatment. The nanorods have a core-shell structure. First, the shell (nanotube) with the thickness of about 40nm was made of TiO"2 through the hydrolysis of (NH"4)"2TiF"6. Second, silver nanoparticles with the diameter of about 3nm were added into the TiO"2 layer through thermal decomposition of AgNO"3 at elevated temperatures. Then, cylindrical cores (nanorods) of CoO and ZnO with 200nm diameter were prepared, respectively. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the structure and composition of the nanorods. UV-vis light absorption measurements in the wavelength range from 350 to...
2011-01-01
Nitrogen doping into titanium dioxide by the sol?gel method using nitric acid
British Library Electronic Table of Contents (United Kingdom)
N-doped TiO2 has been prepared by use of sol?gel systems containing titanium alkoxide, with nitric acid as the nitrogen source. The time needed for gelation of the systems was drastically reduced by ultrasonic irradiation. The peaks assigned to the nitrate and nitrous ions were observed by FT-IR measurement during the sol?gel reaction. The N-doping was confirmed by the observation of N?O peaks in the XPS spectrum of the sample heated at 400??C. The nitrate ion acted as an oxidizer of the ethanol solvent and titanium species. The TiO2 became doped with nitrogen oxide species as a result of reduction of nitrate ion incorporated into the dried gel samples. These results indicated that the added nitric acid was reduced during the sol?gel transition and heating process, and the resulting NO spe...
2011-01-01
British Library Electronic Table of Contents (United Kingdom)
All-atom molecular dynamics simulations were used to study the morphology of polymer/inorganic composite particles prepared by heterocoagulation. The results were also compared to those of our previous study of the preparation of TiO2/poly(acrylic acid-co-methyl methacrylate) and Fe3O4/polystyrene composite particles. In the simulation system, polymer or inorganic particles were simulated by surface-charge-modified C60 or Na atoms. Through a combination of analysis of the radial distribution functions of charged atoms and snapshots of the equilibrated structure, three kinds of particle distributions were observed under different conditions. When the polymer and inorganic particles had opposite surface charges and their sizes were very different, the composite morphology showed a core-shell...
2010-01-01
Fabrication of colloidal crystals on hydrophilic/hydrophobic surface by spin-coating
British Library Electronic Table of Contents (United Kingdom)
Herein, we demonstrate the structure of the PS colloidal crystals which were fabricated on the hydrophilic/hydrophobic Si wafers by a spin-coating technique. Monodisperse PS colloids are spin-coated onto self-assembled monolayers of 3-(aminopropyl)triethoxysilane and propyltrimethoxysilane coated Si wafers. PS spheres organized as ordered close-packed face-centered cubic structure with (111) planes on the hydrophilic surface while they gathered without the crystal structure on the hydrophobic surface. This paper also reports a simple and rapid method to fabricate the close-packed structure of hollow TiO2 spheres. The colloidal crystal of TiO2 hollow spheres was prepared using the PS sphere template on the hydrophobic surface. The mechanism for the growing multilayers of self-assembled PS p...
2011-01-01
Calcium phosphate glass-ceramics for bioactive coating on a #beta#-titanium alloy
International Nuclear Information System (INIS)
The formation of a porous coating is the decisive feature for the bio-compatibility of silica-free calcium phosphate glass ceramics on alloy surfaces like the #beta#-Ti structured Ti-29Nb-13Ta-4.6Zr used in this work. The ceramic composition is highly important: 50CaO-40P_2O_5-7Na_2O-3TiO_2 glass powder produces a pore-free coating unable to bind hydroxyapatite, whereas 60CaO-30P_2O_5-7Na_2O-3TiO_2 glass incorporates pores from which a crystalline hydroxyapatite phase can grow over the surface from simulated body fluid (see Figure). (Abstract Copyright [2003], Wiley Periodicals, Inc.)
2003-07-01
British Library Electronic Table of Contents (United Kingdom)
An electrochemical biosensor for determination of hydrogen peroxide (H2O2) was fabricated, based on the electrostatic immobilization of horseradish peroxidase (HRP) with one-dimensional gold nanowires (Au NWs) and TiO2 nanoparticles (nano-TiO2) on a gold electrode. The nano-TiO2 can give a biocompatible microenvironment and compact film, and the Au NWs can provide fast electron transferring rate and greatly add the amount of HRP molecules immobilized on the electrode surface. Au NWs were characterized by ultraviolet?visible spectra and transmission electron microscope. The electrode modification process was probed by cyclic voltammetry and electrochemical impedance spectroscopy. Chronoamperometry was used to study the electrochemical performance of the resulting biosensor. Under optimal co...
2011-01-01
... Three prototype reactors were constructed and the photocatalysts used were TiO2 for hydroxyl radical generation, dyes such as methylene blue and rose bengal for singlet oxygen generation, and ferric chloride/hydrogen peroxide in Photo-Fenton OH radical generation. Singlet oxygen was effective against some of the pesticides but reacted slowly or not at all with others. All pesticides were degraded by OH radical generating agents (such as methylene blue)...
High resolution transmission electron microscopy of a #beta#'-sialon-TiN nanocomposite
International Nuclear Information System (INIS)
TEM and HRTEM have been used to characterise the microstructures of materials formed by hot-pressing silicon nitride with an Al_2O_3-SiO_2-TiO_2 densification aid system, to form #beta#'-sialon-TiN composites in which the TiN particles are of 20-100 nm dimension. (orig.).
1992-06-21
Zinc-blende--wurtzite polytypism in semiconductors
The zinc-blende (ZB) and wurtzite (W) structures are the most common crystal forms of binary octet semiconductors. In this work we have developed a simple scaling that systematizes the {ital T}=0 energy difference {Delta}{ital E}{sub W{minus}ZB} between W and ZB for all simple binary semiconductors. We have first calculated the energy difference {Delta}{ital E}{sub W{minus}ZB}{sup LDF}({ital AB}) for AlN, GaN, InN, AlP, AlAs, GaP, GaAs, ZnS, ZnSe, ZnTe, CdS, C, and Si using a numerically precise implementation of the first-principles local-density formalism (LDF), including structural relaxations. We then find a {ital linear} scaling between {Delta}{ital E}{sub W{minus}ZB}{sup LDF}({ital AB}) and an atomistic orbital-radii coordinate {ital {tilde R}}({ital A},{ital B}) that depends only on the properties of the free atoms {ital A} and {ital B} making up the binary compound {ital AB}. Unlike classical structural coordinates ...
1992-10-15
Temperature dependence of the performance of ultraviolet detectors
Energy Technology Data Exchange (ETDEWEB)
We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the ...
2003-08-21
Temperature dependence of the performance of ultraviolet detectors
International Nuclear Information System (INIS)
We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the ...
2003-08-21
Materials design for semiconductor spintronics by ab initio electronic-structure calculation
International Nuclear Information System (INIS)
A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping ...
2003-04-01
Wideband Modulation and Tuning of Semiconductor Lasers ...
... Tunable semiconductor lasers are essential components for links employing optical frequency modulation (OFM) for enhanced dynamic range or ...
1996-07-01
A NEW FORM OF SOLID STATE SOLAR GENERATOR
... nent to the design and construction of metal-semiconductor solar cells, in that both the photovoltage and the efficiency of metal-semiconductor cells ...
1962-01-01
The optical and structural properties of polycrystalline Cu(In,Ga)(Se,S)2 absorber thin films
British Library Electronic Table of Contents (United Kingdom)
The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been ...
1997-11-07
Environmental Research Database
ObjectivesWe have developed a life cycle perspective inspired conceptual model (CM) that suggests the importance of terrestrial ecosystems as a major repository of ZnO, TiO2, and Ag (Tier 1) manufactured nanomaterials (MNMs) introduced via the land application of MNM-containing biosolids. We propose to investigate the transport, fate, behavior, bioavailability, and effects of MNMs in(to) agroecosystems under environmentally realistic scenarios organized around three key hypotheses: Hypothesis (H1) Surface [continued...]DescriptionWe have developed a life cycle perspective inspired conceptual model (CM) that suggests the importance of terrestrial ecosystems as a major repository of ZnO, TiO2, and Ag (Tier 1) manufactured nanomaterials (MNMs) introduced via the land application of MNM-containing biosolids. We propose to investigate the transport, fate, behavior, bioavailability, and effects of MNMs in(to) agroecosystems under environmentally realistic scenarios organized around three key ...
2013-01-30
International Nuclear Information System (INIS)
Fine ceramic particles of zirconia toughened alumina (ZTA), titania toughened alumina (TTA), and zirconia-titania toughened alumina (ZTTA) have been synthesized by ultrasonic spray pyrolysis (USP) at various temperatures from starting salt solutions of various compositions aiming for the development of catalytic material. These particles were characterized for properties such as shape, size and size distribution, diffraction pattern, and chemical and phase composition of elements by scanning electron microscopy (SEM), particle size analyzer (PSA), x-ray diffraction (XRD), and inductively coupled plasma-atomic emission spectroscopy (ICP-AES). Chemical compositions and sizes of ceramic composites have been controlled by the stoichiometry of salt solutions and the flow rate of spraying solutions. The optimum experimental conditions for the various composite particle synthesis have been proposed.
2002-08-01
Functionalizing titania nanoparticle surfaces in a fluidized bed plasma reactor
International Nuclear Information System (INIS)
Functionalizing nanoparticle surfaces is essential for achieving homogeneous dispersions of monodisperse particles in polymer nanocomposites for successful utilization in engineering applications. Functionalization reduces the surface energy of the nanoparticles, thereby limiting the tendency to agglomerate. Moreover, reactive groups on the surface can also participate in the polymerization, creating covalent bonds between the inorganic and organic phases. In this paper, a fluidized bed inductively coupled plasma (FB-ICP) reactor is used to break apart the agglomerates and functionalize commercial TiO2 nanoparticle powders in a batch of several grams. The fluidized bed could be implemented into a continuous flow reactor, potentially making this a viable method to treat larger quantities of commercial powders. The particles are treated with acrylic acid (AA) and tetraethylorthosilicate (TEOS) plasma and the functionalized particles were collected separately from bulk powder. High ...
2009-11-18
Effects of multi-ion irradiation on microstructural changes in lithium titanate
International Nuclear Information System (INIS)
The irradiation behavior of Li_2TiO_3 under a fusion reactor environment was simulated by simultaneous irradiation of Li_2TiO_3 by the triple ion beams and the respective single ion beams of O"2"+, He"+ and H"+. The microstructural changes in Li_2TiO_3 caused by the irradiation were measured by FT-IR photoacoustic spectroscopy. The results suggest that the amount of TiO_2 formed is proportional to the dpa and that the method of irradiation does not affect the dependence of formation of TiO_2. On the other hand, the amount of defects and/or radiolytic products generated by irradiation, which is considered to trap hydrogen near the surface, is found to be affected by the method of irradiation. Such phenomena are believed to affect the tritium release behavior from Li_2TiO_3, and durability of Li_2TiO_3 and compatibility of Li_2TiO_3 with other components of the breeder blanket such as structural materials in the fusion reactor system under operation.
2009-04-30
Composites in the TiC-TiYTZP system
International Nuclear Information System (INIS)
Ceramic matrix composites in the TiC-Ti, Y-TZP system can be synthesized by the reaction between carbon and the TiO_2-Y_2O_3-ZrO_2 solid solution nanopowder. This method results in the more homogeneous powders than those prepared by the physical mixing of TiC and zirconia s.s. powders. Twelve TiO_2-Y_2O_3-ZrO_2 solid solution nanopowders differing in the proportions of the constituent oxides were prepared by the coprecipitation- calcination route. They were reacted with the pyrolytic carbon evenly distributed within the system. Carbon was introduced by the thermal decomposition of the phenol-formaldehyde resin dissolved in ethyl alcohol and mixed with the zirconia s.s. nanopowder. Reaction was performed in vacuum. Compacts of the composite powders sintered in vacuum give dense materials of evenly distributed TiC inclusions of sizes not surpassing 400 nm. Hardness of such materials was dependent on their chemical and phase composition but was generally higher than that of the pure ...
2003-09-25
International Nuclear Information System (INIS)
A series of cation exchange membranes was produced by impregnating and coating both sides of a quartz web with a Nafion solution (1100 EW, 10%wt in water). Inert filler particles (SiO_2, ZrO_2 or TiO_2; 5-20%wt) were incorporated into the aqueous Nafion solution to produce robust, composite membranes. Ion-exchange capacity/equivalent weight, water take-up, thickness change on hydration and ionic and electrical conductivity were measured in 1 mol dm"-"3 sulfuric acid at 298 K. The TiO_2 filler significantly impacted on these properties, producing higher water take-up and increased conductivity. Such membranes may be beneficial for proton exchange membrane (PEM) fuel cell operation at low humidification. The PEM fuel cell performance of the composite membranes containing SiO_2 fillers was examined in a Ballard Mark 5E unit cell. While the use of composite membranes offers a cost reduction, the unit cell performance was reduced, in practice, due to drying of the ionomer at the cathode.
2010-09-01
Saturated bonds and anomalous electronic transport in transition-metal aluminides
Energy Technology Data Exchange (ETDEWEB)
This thesis deals with the special electronic properties of the transition-metal aluminides. Following quasicrystals and their approximants it is shown that even materials with small elementary cells exhibit the same surprising effects. So among the transition-metal aluminides also semi-metallic and semiconducting compounds exist, although if they consist of classic-metallic components like Fe, Al, or Cr. These properties are furthermore coupled with a deep pseusogap respectively gap in the density of states and strongly covalent bonds. Bonds are described in this thesis by two eseential properties. First by the bond charge and second by the energetic effect of the bond. It results that in the caes of semiconducting transition-metal aluminides both a saturation of certain bonds and a bond-antibond alteration in the Fermi level is present. By the analysis of the near-order in form of the so-calles coordination polyeders it has been succeeded to establish a simple ...
2006-05-22
[Preparation of titanium dioxide particles and properties for flue gas desulfurization].
Under different sintering temperatures(340 degrees C, 440 degrees C, 540 degrees C, 640 degrees C), four TiO2 particles were prepared. The crystal types of all four samples were found to possess anatase structures by XRD. It was obtained by N2 experimental adsorption at low temperature (77K) that their surface areas and average pore size were between 79 and 124 m2/g, 56.8 and 254.8 A respectively. The pore structure of TiO2 particles was characterized by scanning electron microscope (SEM). The tests of adsorption dynamics for FGD and the performance of SO2 removal were investigated in a fixed-bed system for different samples. The results show that SG540 sample which made at 540 degrees C sintering temperature had the most quality among the four samples. It can adsorb SO2 of 38.9 mg for one gram SG540 sample. Different operating conditions for SG540 such as adsorption temperature, SO2 concentration in flue gas and the superficial velocity of flue gas were investigated. TiO2 particles ...
2003-01-01
In an earlier paper (Phys. Rev. Lett. 66, 41 (1991)), we calculated both the dielectric constant ({epsilon}{sub {infinity}}) and the nonlinear optical susceptibilities for second-harmonic generation ({chi}{sup (2)}) in the static limit for AlP, AlAs, GaP, and GaAs in the local-density approximation with and without a self-energy correction in the form of a scissors operator,'' including local-field effects. In this paper, we expand our presentation of this calculation. Agreement with experiment to within 15% for the nonlinear susceptibility is demonstrated where experiments are available (GaP and GaAs); the dielectric constants are in no worse than 4% agreement with experiment. The virtual hole'' contributions are reformulated to avoid large numerical cancellations in the case of near degeneracies. The virtual electron'' terms dominate over the virtual hole'' terms ...
1991-12-15
Energy Technology Data Exchange (ETDEWEB)
A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.
1982-12-23
NASA's Real World: The Light Plants Need - NASA
light-emitting diode A light-emitting diode, or LED, is a semi-conductor light source that emits visible light or invisible infrared radiation. Semi-conductors ...
VIS harvesting unsymmetrical squaraine dye for dye-sensitized solar cells
British Library Electronic Table of Contents (United Kingdom)
An unsymmetrical squaraine dye which contains an arylamino group was synthesized and used in dye-sensitized solar cells. The molar extinction coefficient of the dye is 77793 M-1 cm-1. Because our synthesized molecule may have no diradical character or the contribution of the diradicaloid component to resonance is quite small, the newly designed squaraine dye has a maximum absorption at 546 nm in the visible region compared with the NIR squaraine sensitizers. Cyclic voltammetry and time dependent density function theory calculation were accomplished to scrutinize the sensitized performance of the dye. Meanwhile, the novel sensitizer has been used to sensitize nanocrystalline TiO2-based solar cell. Under standard global AM 1.5 solar conditions, the squaraine dye-sensitized cell gives a short...
2012-01-01
Relationships between Film Chemistry, Structure, and Mechanical Properties in Titanium Oxide
Energy Technology Data Exchange (ETDEWEB)
Titanium oxides were grown anodically to selected final potentials on grade II polycrystalline titanium under different anodization rates. XPS and RBS results show that the oxide consists of primarily TiO2 with a non-stoichiometric oxide/metal interface, with the slower growth rate associated with a thicker layer at the interface. Characterization using TEM reveals that the structure of the oxide evolves from a primarily amorphous phase to islands of crystallites in an amorphous matrix, to an entirely crystalline phase by increasing the polarization potential. Slower growth rates tend to remain crystalline at higher potentials. The mechanical strength of oxide films extracted from load-depth data by nanoindentation varies dramatically for oxide films grown by different rates at 9.4 V, and to a lesser extent at lower potentials. The variation of film strength is associated with both compositional and structural characteristics.
2001-01-01
Particulate composites in the TiC-TiYTZP system
International Nuclear Information System (INIS)
Twelve powders of TiO_2-Y_2O_3-ZrO_2 solid solution of the methodically changed composition were prepared by a coprecipitation-calcination technique. After mixing with phenol-formaldehyde resin, the powders were calcinated for 2 hours at 1200"oC in vacuum. The resultant composite powders contained TiC and non-reacted carbon. Green compacts were sintered in vacuum at 1500"oC for 2 hours. A temperature increase was stopped at 1200"oC to react remains of carbon. There were two carbides in the composites TiC and ZrC. TiC non-stoichiometry depended on carbon content in the system. Phase composition of the depended on of titania and yttria in zirconia solid solution. The majority of the samples showed two tetragonal zirconia phases differing in lattice parameter and tetragonality. (author)
2004-09-12
Observation of the microstructural changes in lithium titanate by multi-ion irradiation
International Nuclear Information System (INIS)
The irradiation behavior of Li_2TiO_3 under a fusion reactor environment was simulated by simultaneous irradiation of Li_2TiO_3 by the triple ion beams and the respective single ion beams of O"2"+, He"+ and H"+. The microstructural changes in Li_2TiO_3 caused by the irradiation were measured by Raman spectroscopy and FT-IR photoacoustic spectroscopy. The results suggest that the formation of TiO_2 due to displacements by irradiation occurs, and the irradiation defects generated by irradiation trap hydrogen and increase the amount of hydroxyl near the surface. Such phenomena are believed to significantly affect the chemical form of the released tritium and the tritium inventory in the breeding materials of a fusion reactor.
2004-08-01
British Library Electronic Table of Contents (United Kingdom)
AbstractBackground In recent years nano-metaloxides which easily penetrate into the cells with special interest due to their higher chemical reactivity as compared to that of similar materials in the bulk form. Of particular interest are nano-TiO2 and ZnO, which have been widely used for their bactericidal and anticancerous properties. Purpose The aim of the present study was to examine the bactericidal properties of nano-TiO2 and ZnO combined with visible light on S. aureus and S. epidermitis, known for their high prevalence in infected wounds. Study Using the technique of electron-spin resonance (ESR) coupled with spin trapping, we examined the ability of TiO2 and ZnO nanoparticle suspensions in water to produce reactive oxygen species (ROS) with and without visible light irradiation. Th...
2011-01-01
Electrochemical Solar Energy Converter
International Science & Technology Center (ISTC)
Elaboration of Electrochemical Solar Energy Converter Incorporating Cadmium Selenide Semiconductor Developed Electrochemically
(Watkins and. Corbett,. 1964) which is a phosphorous-vacancy complex, i.e., ...... Grover. 1965. Semiconductor. Surfaces. ...
[Magnetic thin film research]: Progress report year 2
Energy Technology Data Exchange (ETDEWEB)
The work in the past year has primarily involved four areas of magnetic thin films: amorphous rare earth-transition metal alloys, epitaxial CoPt{sub 3} and Ni-Pt alloy thin films, amorphous rare earth doped Si (a new class of dilute magnetic semiconductor with large negative magnetoresistance which the authors have discovered), and exchange-coupled antiferromagnetic insulators. In the amorphous alloys, they made a systematic study of the effects of local anisotropy, macroscopic (perpendicular) anisotropy, and exchange constant on the fundamental (and practical) properties of these magnetic alloys, as originally described in the grant proposal. The work on the epitaxial Co-Pt (and more recently Ni-Pt) alloys was originally undertaken as a comparison study to the amorphous alloys. Crystalline Co-Pt alloys have many striking similarities to the amorphous rare earth-transition metal alloys: perpendicular magnetic anisotropy, magneto-optic activity, and a {Tc} (for ...
1996-09-01
International Nuclear Information System (INIS)
To understand the effect of Mo-Nb additions on the electrochemical behavior of #beta#-titanium alloys in ambient temperature chloride solutions, characterization of the electrochemistry and passivity of a Ti-15Mo-3Al alloy (#beta#-21S) was undertaken. Both solution heat-treated (SHT) and peak-aged (PA) alloys exhibited passive anodic behavior in aerated and deaerated 0.6M NaCl, aerated and deaerated 0.6M NaCl adjusted to pH 1 with HCl, as well as aerated 5M HCl. X-ray photoelectron spectroscopy (XPS) performed after exposure to neutral 0.6M NaCl indicated that both PA and SHT #beta#-21S formed a predominantly TiO_2 film. Auger electron spectroscopy (AES) and cathodic kinetics suggest that the Mo and Nb alloying additions are incorporated into the oxide in amounts less than that found in the alloys. The predominance of the passivating TiO_2 may explain the similarity of the electrochemical behavior observed. However, in deaerated 5M HCl, all materials displayed active-passive behavior ...
... the pulmonary vein and because there's a gap, electricity is going across the ablation line and capturing ...
Evolution of ultraviolet dwarfs
UV dwarf star evolution, using central and gap star models emphasizing photoneutrino emission
1969-01-01
International Nuclear Information System (INIS)
The possibility to compress and to split laser pulses at their nonlinear optical transmission through semiconductor films was investigated
2011-07-07
Electronic spectra of semiconductor nanocrystals
Energy Technology Data Exchange (ETDEWEB)
Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.
1993-12-31
Radionuclide X-ray fluorescence analysis using semiconductor detectors
International Nuclear Information System (INIS)
Czech May 1979. p. 32-33. Czechoslovakia Benada, J. Spacek, B. Ustav
1979-05-01
New laser nano-technologies for cleaning the semiconductor materials
International Nuclear Information System (INIS)
2009 p. 143-144 Ukraine Lepikh, Ya.I. Odesa National University, Odesa
2009-09-15
Impact of focussed ion beam (FIB) preparation on the potential structure of silicon semiconductors
International Nuclear Information System (INIS)
English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,
2006-03-27
The AMOS cell - An improved metal-semiconductor solar cell
A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.
1975-01-01
Spin Modulation in Semiconductor Lasers
We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal analyses, we elucidate how the spin modulation in semiconductor lasers can improve performance, as compared to the conventional (spin-unpolarized) counterparts. We reveal that the spin-polarized injection can lead to an enhanced bandwidth and desirable switching properties of spin-lasers.
2010-01-01
Potential benefits of using commercial simulators to test equipment control systems
Energy Technology Data Exchange (ETDEWEB)
Motivation is given for a technique to more thoroughly test semiconductor equipment control systems. A description is given of a simulator-based control system testing technique. Potential benefits that could be realized by using this technique in the semiconductor industry as well as benefits documented by using this technique in other industries are described. Specific requirements for using the technique in the semiconductor industry are outlined. A summary of a survey of nine commercial simulation systems is given. Finally, the outcome of the survey is compared with the requirements for using the technique.
1997-09-01
Gas fixation solar cell using gas diffusion semiconductor electrode
Energy Technology Data Exchange (ETDEWEB)
A gas diffusion semiconductor electrode and solar cell and a process for gaseous fixation, such as nitrogen photoreduction, CO/sub 2/ photoreduction and fuel gas photo-oxidation are described. The gas diffusion photosensitive electrode has a central electrolyte porous matrix with an activated semiconductor material on one side adapted to be in contact with an electrolyte and a hydrophobic gas diffusion region on the opposite side adapted to be in contact with a supply of molecular gas.
1980-12-23
OMVPE growth of GaP and AlGaP using tertiarybutylphosphine as the phosphorus source
Energy Technology Data Exchange (ETDEWEB)
GaP and AlGaP were grown by atmospheric pressure OMVPE on GaP substrates using tertiarybutylphosphine as the phosphorus source. A specular surface of GaP was obtained on a (100) just-oriented surface at 700deg C. Hazy but uniform thickness AlGaP was obtained. The growth efficiency for GaP was 1.2x10{sup 3}{mu}m/mol and that for AlGaP was 2.1x10{sup 3}{mu}m/mol.4.2 K photoluminescence showed near-edge emission from both GaP and AlGaP. (orig.).
1991-03-01
Non-thermal atmospheric pressure discharges for surface modification
International Nuclear Information System (INIS)
Throughout the last decades, plasma technology has been established in a series of surface treatment applications, e.g. for semiconductor processing or optical coatings. The majority of plasma assisted technologies is based on low pressure processes. In recent years, however, non-thermal atmospheric pressure discharges have attracted considerable interest because of their simplified technical devices for industrial applications as compared to low pressure processes which require vacuum equipment. Hence, batch processing can be avoided, thus facilitating the implementation of plasma process steps into production lines. Investment costs are cut down significantly. The use of atmospheric pressure plasmas for technical applications dates back to the ozone production with dielectric barrier discharges (DBD) by Siemens in 1857. Lately, the application of atmospheric pressure plasmas for surface treatment has been reported, e.g. for the treatment of foils to improve ...
Dose dependence of semiconductor material conductivity as a means of high fluence dosimetry
Energy Technology Data Exchange (ETDEWEB)
Dose dependences of conductivity at a temperature of 78 K for InSb and InAs single crystals under reactor fast neutron, 50 MeV proton and 80 MeV alpha particle irradiation up to fluence of 10{sup 17} cm{sup -2} are considered. Special attention is given to non-trivial, but little known semi-conductor characteristics in terms of {sigma}(F) dependence at large fluences, and also to the versatility of such dependence for all semiconductors. The behaviour of semiconductor materials conductivity dependence on fluence presented here may be used for semiconductor dosemeters characterisitic variation forecasting under large fluence measurements and in radiation emergency dosimetry. (author).
1996-12-31
Stress-assisted crystallisation in anodic titania
International Nuclear Information System (INIS)
Research highlights: ? Correlations between microstructure and internal stress during Ti anodising are established. ? Large internal compressive stresses are accumulated in the film during anodising upto 12 V. ?A transition from compressive to tensile stress is observed when the cell voltage exceeds 12 V. ? At 40 V, the oxide films consist of two regions with different compositions and microstructures. Crystallisation of amorphous to anatase TiO2 contributes to the compressive stress relaxation. - Abstract: The relationship between the microstructural and internal stress evolution during Ti anodising is discussed. Samples anodised galvanostatically to 12 V and 40 V, corresponding to different stages of the internal stress evolution, were examined by in-plane and cross-section transmission electron microscopy. Electron diffraction patterns have been complemented with stoichiometry data obtained from energy loss near edge structure spectra. The sample anodised to 40 V was observed to ...
2011-04-01
International Nuclear Information System (INIS)
In this study, SnO2 thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (Ts = 440 oC). The precursors were methanol CH4O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T(?) and reflectance R(?) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity ?AB. The obtained value: ?AB ? 23.4 m3 s-1 helped situating the performance of the as-grown SnO2 compound among most known PV-T oxides like ZnO and TiO2.
2010-02-04
Optimization of microstructure and properties of in situ formed #beta#-O-sialon-TiN composite
International Nuclear Information System (INIS)
A powder mixture of #alpha#-Si_3N_4, Al_2O_3, and TiO_2 was hot-pressed using different sintering cycles to search for an optimum in situ formed #beta#-O-sialon-TiN composite. The impulse excitation technique (IET), high-temperature X-ray diffraction (HTXRD), and scanning electron microscopy (SEM) were used to investigate the microstructure. Below the temperature of 1300 deg. C, the high-temperature internal friction (Q "-"1) decreases with the increase of sintering temperature, whereas the density of the material increases with the increase of sintering temperature. At a sintering temperature higher than 1850 deg. C, the ceramic could not be densified and O-sialon was not formed. Also, the mechanical properties of ceramics hot-pressed using different sintering cycles were assessed. The ceramic hot-pressed at 1700 deg. C for 10 min displays a combination of high hardness and good fracture toughness, due to an optimum combination of #beta#-sialon, O-sialon, and TiN-phases. This paper ...
2006-07-15
International Nuclear Information System (INIS)
Ordered mesoporous C-TiO2 nanocomposites with crystalline framework were prepared by the evaporation-induced triconstituent co-assembly method. The products were characterized by XRD, TEM, N2 adsorption-desorption and TG. Their microwave absorption properties were investigated by mixing the product and epoxy resin. It is found that the peak with minimum reflection loss value moves to lower frequencies and the ordered mesoporous C-TiO2 nanocomposite possesses an excellent microwave absorbing property with the maximum reflection loss of -25.4 dB and the bandwidth lower than -10 dB is 6.6 GHz. The attenuation of microwave can be attributed to dielectric loss and their absorption mechanism is discussed in detail. The mesoporous C-TiO2 nanocomposites also exhibit a lower infrared emissivity in the wavelength from 8 to 14 ?m than that of TiO2-free powder. -- Graphical abstract: Ordered mesoporous C-TiO2 nanocomposite with crystalline framework possess excellent microwave absorbing properties ...
2010-12-01
British Library Electronic Table of Contents (United Kingdom)
In this paper, we prepared by the sol-gel method alkaline titania catalysts, doped by gelling titanium alkoxide with aqueous solutions containing potassium, rubidium or cesium chlorides. XRD patterns showed that samples annealed at 400 and 600degreeC contained a single crystalline phase, anastase. Specific surface areas were higher in samples annealed at 400degreeC (>100m2/g) than in those annealed at 600degreeC (25m2/g). The weight density of basic sites determined by CO2-TPD drastically diminished in samples treated at 600degreeC. Catalysts were tested for the self-condensation of acetone at 300degreeC; main reaction products were isomesityl oxide, mesityl oxide and mesitylene. Samples annealed at 600degreeC showed lower acetone conversion rate and low formation of mesitylene than that o...
2006-01-01
An Undergraduate Course to Bridge the Gap between Textbooks and Scientific Research
UK PubMed Central (United Kingdom)
This article reports on a one-semester Advanced Cell Biology course that endeavors to bridge the gap between gaining basic textbook knowledge about cell biology and learning to think and work as a researcher....Full Text Available
2011-03-01
A Failure of Coalition Leadership: The Falaise-Argentan Gap
... failure at Goodwood and General Montgomery's continued failure to aggressively pursue the ground campaign. Air Chief ...
2002-04-09
Dynamic positive column in long-gap barrier discharges
A simple analytical model of the barrier discharge in a long gap between opposing plane electrodes is developed. It is shown that the plasma density becomes uniform over large part of the gap in the course of the discharge development, so that one can speak of a formation of a dynamic positive column. The column completely controls the dynamics of the barrier discharge and determines such characteristics as the discharge current, discharge duration, light output, etc. Using the proposed model, all discharge parameters can be easily evaluated
2005-01-01
Energy Technology Data Exchange (ETDEWEB)
Three dimensional computational fluid dynamic (CFD) calculations of a typical prismatic very high temperature gas-cooled reactor (VHTR) were conducted to investigate the influence of gap geometry on flow and temperature distributions in the reactor core using commercial CFD code FLUENT. Parametric calculations changing the gap width in a whole core length model of fuel and reflector columns were performed. The simulations show the effects of core by-pass flows in the heated core region by comparing results for several gap widths including zero gap width. The calculation results underline the importance of considering inter-column gap width for the evaluation of maximum fuel temperatures and temperature gradients in fuel blocks. In addition, it is shown that temperatures of core outlet flow from gaps and channels are strongly affected by the ...
2009-09-01
Structural origin of optical bowing in semiconductor alloys p
Energy Technology Data Exchange (ETDEWEB)
The principle of conservation and transferability of chemical bonds explains the recent discovery by extended x-ray absorption fine-structure measurements of two unequal anion-cation bond lengths R/sub A/C and R/sub B/C in A/sub x/B/sub 1-x/C zinc-blende semiconductor alloys despite the close adherence of the lattice constant to the average value (Vegard rule). This bond alternation, manifested as a structural distortion to a local chalcopyrite coordination around the anions, explains also most of the observed optical bowing in semiconductor alloys.
1983-08-22
Structural origin of optical bowing in semiconductor alloys p
International Nuclear Information System (INIS)
The principle of conservation and transferability of chemical bonds explains the recent discovery by extended x-ray absorption fine-structure measurements of two unequal anion-cation bond lengths R/sub A/C and R/sub B/C in A/sub x/B/sub 1-x/C zinc-blende semiconductor alloys despite the close adherence of the lattice constant to the average value (Vegard rule). This bond alternation, manifested as a structural distortion to a local chalcopyrite coordination around the anions, explains also most of the observed optical bowing in semiconductor alloys.
Practical antireflection coatings for metal-semiconductor solar cells
The metal-semiconductor solar cell is a potential candidate for converting solar energy to electrical energy for space and terrestrial application. In this paper, a method for obtaining parameters of practical antireflection (AR) coatings for the metal-semiconductor solar cells is given. This method utilizes the measured equivalent index of refraction obtained from ellipsometry, since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculations of optical parameters for Ta/sub 2/O/sub 5/ AR coatings on Au-GaAs and Au-GaAs/sub 0.78/P/sub 0.22/ solar cells are presented for comparison. (AIP)
1976-09-01
Effective mass of heavy holes in diamond-like semiconductors
Nonparabolicity of the heavy hole band in diamond-like semiconductors, which occurs within the framework of the three band model with the perturbation from the other bands taken into account according to the Loewdin procedure, is studied. A direct dependence of nonparabolicity on the band anisotropy (caused by the different effect of Gamma/sub 15c/ and Gamma/sub 12c/ bands) and the inverse dependence on the magnitude of the spin-orbit splittiing is established. A connection between the effective mass of heavy holes and their energy is obtained, which is valid for the majority of diamond-like semiconductors, except for materials with a very strong nonparabolicity of the band of silicon type
1987-08-01
Effective mass of heavy holes in diamond-like semiconductors
International Nuclear Information System (INIS)
Nonparabolicity of the heavy hole band in diamond-like semiconductors, which occurs within the framework of the three band model with the perturbation from the other bands taken into account according to the Loewdin procedure, is studied. A direct dependence of nonparabolicity on the band anisotropy (caused by the different effect of Gamma/sub 15c/ and Gamma/sub 12c/ bands) and the inverse dependence on the magnitude of the spin-orbit splittiing is established. A connection between the effective mass of heavy holes and their energy is obtained, which is valid for the majority of diamond-like semiconductors, except for materials with a very strong nonparabolicity of the band of silicon type.
Wire-shaped semiconductor light-emitting diodes for general-purpose lighting
Energy Technology Data Exchange (ETDEWEB)
The object of this work is to develop and optimize a new type of light-emitting diode (LED) with a wire-shaped, cylindrical geometry.
2002-10-28
Sandia National Labs: PCNSC: Departments: Semiconductor Material...
For coupled quantum wires and dots, tunneling effects and coherent transport for quantum computing are being studied. In 2D systems, electron-hole bilayers for exciton...
2011-07-05
SURFACE AND INTERFACE PROPERTIES OF PdCr/SiC SCHOTTKY DIODE GAS ...
The formation of palladium silicides near the interface may decrease hydrogen solubility at the effective metal/semiconductor ...
NOTICE THIS DOCUMENT HAS BEEN REPRODUCED FROM - NASA Technical ...
COATINGS FOR THE METAL-SEMICONDUCTOR SOLAR CELLS 3S GIVEN. THIS METHOD UTILIZES THE MEASURED EQUIVALENT INDEX OF. REFRACTION OBTAINED FROM ELLIPSOMETRY ...
Modelling the electrochemical and catalytic processes on semiconductors: laser radiation effect
International Nuclear Information System (INIS)
2009 p. 77-78 Ukraine Lepikh, Ya.I. Fedchuk, AP Odesa National University,
2009-09-15
Division of Solar Energy - NASA Technical Reports Server
Metal-semiconductor solar cells reported to date exhibit inherently low output voltages. This effect isa consequence of high diode "saturation" ...
Change of the DKPS-100 semiconductor detector properties under 3.2 MeV alpha particle irradiation
International Nuclear Information System (INIS)
Russian 1977. p. 582. USSR Antropov, AE Fedoseeva, OP Milovanov,
Energy Technology Data Exchange (ETDEWEB)
Recently, the public has become aware of keywords like ''Quantum computer'' or ''Quantum cryptography''. Regarding their potential application in solid state based quantum information processing and their overall benefit in fundamental research quantum dots have gained more and more public interest. In this context, quantum dots are often referred to as ''artificial atoms'', a term subsuming their physical properties quite nicely and emphasizing the huge potential for further investigations. The basic mechanism to be considered is the theoretical model of a two-level system. A quantum dot itself represents this kind of system quite nicely, provided that only the presence or absence of a single exciton in the ground state of that structure is regarded. This concept can also be expanded to the presence of two excitons (bi-exciton). Transitions between the relevant levels can be ...
2009-10-15
Energy Technology Data Exchange (ETDEWEB)
Systematic studies of the NdFeAsOF superconducting energy gap using point-contact Andreev-reflection (PCAR) spectroscopy are presented. At low temperatures the PCAR conductance spectra show a pair of gap-like peaks at about {+-} (4-7) mV and in most cases also a pair of humps at around {+-} 10 mV. Fits to the s-wave two-gap model of the PCAR conductance allowed to determine two superconducting energy gaps in the system. However, the energy-gap features disappear at T* = 15-20 K, much below the particular T{sub c} of the junction under study. At T* a zero-bias conductance (ZBC) peak emerges, which at higher temperatures usually overwhelms the spectrum with an intensity significantly higher than the conductance signal at lower temperatures. Possible causes of this unexpected temperature effect are discussed. In some cases the conductance spectra show just a reduced conductance around ...
2009-01-15
Studies of optical properties and applications of some mixed ternary semiconductors
International Nuclear Information System (INIS)
Refractive indices of some mixed compound semiconductors below the bandgap are presented on the basis of some fundamental parameters and the effect of lattice mismatch on the refractive index step is also studied. The results help to design a variety of opto-electronic devices for the use in optical fiber communication and heterostructure lasers. The calculated values agree well with available experimental values thus justifying the approach. (author).
Optic probe for semiconductor characterization
Energy Technology Data Exchange (ETDEWEB)
Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).
2008-09-02
Development of heavy-ion irradiation technique for single-event in semiconductor devices
Energy Technology Data Exchange (ETDEWEB)
Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)
1997-03-01
Calculation of the energy band structures in semiconductors by RAPW method
International Nuclear Information System (INIS)
To calculate the energy band structures in semiconductors using the relativistic augmented plane wave method, atomic potential and charge density are needed, which are calculated by self-consistent method. Wave function for one electron is determined by solving the Dirac equation with the Hartree-Fock equation based on the slater's exchange potential. The results of calculation for Cu"+"1 are given. (Author).
International Nuclear Information System (INIS)
Heat transfer and flow characteristics of water boiling flow were experimentally investigated in narrow horizontal rectangular channels with the gaps of 0.6mm-2.03mm. The heat transfer of two-phase boiling flow was weakend in smaller gap. The two-phase friction pressure drop decreased with the gap size and the two-phase friction multipliers were smaller compared with those in normal channels. Correlations to predict te boiling heat transfer coefficients were obtained. (author)
2003-05-28
Energy Technology Data Exchange (ETDEWEB)
This paper presents a new method for the determination of the energy gap of superconductors. The V/sub max//kT versus ..delta../kT curve was calculated from tunneling theory. The maximum voltage in differential conductance V/sub max/ was measured from the electron tunneling spectrum. From V/sub max//kT and the curve, one can easily calculate the energy gap value ..delta... This method is simple, and the accuracy almost approaches that of the curve-fitting method.
1986-07-01
International Nuclear Information System (INIS)
This paper presents a new method for the determination of the energy gap of superconductors. The V/sub max//kT versus #DELTA#/kT curve was calculated from tunneling theory. The maximum voltage in differential conductance V/sub max/ was measured from the electron tunneling spectrum. From V/sub max//kT and the curve, one can easily calculate the energy gap value #DELTA#. This method is simple, and the accuracy almost approaches that of the curve-fitting method.
Energy Technology Data Exchange (ETDEWEB)
A new method for determining the energy gap of a superconductor using the maximum in the differential conductance curve of electron tunneling spectrum is given in this paper. The V/sub max//kT versus ..delta../kT curve was calculated from tunneling theory. V/sub max/, the voltage of the conductance maximum, can be measured from electron tunneling spectrum. ..delta../kT can be found from this curve, then the energy gap ..delta.. can be calculated. This method is simple, fast and accurate. The accuracy almost approaches that of the curve fitting method.
1986-02-01
Energy Technology Data Exchange (ETDEWEB)
A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results.
2004-01-25
Semiconductor properties and protective role of passive films of iron base alloys
Energy Technology Data Exchange (ETDEWEB)
Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H{sub 2}SO{sub 4} solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is ...
2007-01-15
Semiconductor properties and protective role of passive films of iron base alloys
International Nuclear Information System (INIS)
Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both ...
2007-01-01
The hidden secrets of the E-center in Si and Ge
Energy Technology Data Exchange (ETDEWEB)
The group- V vacancy pair, the so-called E-center, has recently been demonstrated to have, both in Si and Ge, more complicated energy-level schemes in the energy gap than were previously assumed. The E-center in silicon has, in addition to its well-established single-acceptor level in the upper half of the band gap, also a donor level in the lower half of the band gap; this donor level has lain hidden for more than 40 years. The E-center in Ge has an even more complicated level scheme as it induces, in addition to two levels analogous to those found in Si, also a double-acceptor level in the upper half of the band gap. Thus the E-center in Si can exist in three charge states and the E-center in Ge in four.
2007-12-15
The Influence of Inert Particulate Material on the Properties of ...
... Briefly, a standard detonator (normally the Scale 1 Gap Test Donor, comprising an exploding bridgewire to initiate a low density PETN pellet and ...
1984-05-01
The Expanded Large Scale Gap Test
... an Page 15. NSWC TR 86-32 exploding bridgewire detonator containing PETN rather, than a pri'mary explosive. However ...
1987-03-01
International Nuclear Information System (INIS)
The structural, electronic and optical properties of ZnX and CdX (X = Se, Te and S) are studied using density functional theory by the Wien2k package. The energy band gap, real and imaginary parts of the dielectric function, energy loss function, optical absorption coefficient and reflectivity spectra of these compounds are calculated. The Engel-Vosko approach improves the energy band gaps of ZnX and CdX compounds. The calculated optical parameters are in good agreement with available experimental results, particularly in the Engel-Vosko approach. Furthermore the effect of hydrostatic pressure on the energy band gap, the real and imaginary parts of the dielectric function of these compounds is studied. The first and second order pressure coefficient for the energy band gaps, the static dielectric function and the static reflectivity spectra are calculated.
2010-09-03
On the disrupted magnetic braking model for the period gap of cataclysmic variables
International Nuclear Information System (INIS)
The disrupted magnetic braking theory for the period gap of cataclysmic variable systems is used to study the binary evolution of low-mass main-sequence-like stars with white dwarf companions. The model is able to reproduce the observed location and width of the gap provided that the average mass transfer rates above the upper edge of the gap are greater than about 1.9 x 10 to the -9th solar masses/yr. For the case of angular momentum loss by magnetic braking, the slope of the mass transfer rate with respect to orbital period is shown to range from 3.4 to 3.7. For the evolutionary sequences considered, the He-3 abundance at the surface of the secondary exceeds 0.0015 after the complete mixing phase, resulting in modifications in the nuclear burning development of nova explosions. 31 refs.
Modelling and design of smoothing reactances. Application to air gap length calculation
Energy Technology Data Exchange (ETDEWEB)
A new method for analysis and design of smoothing reactances utilising two-dimensional planar models is presented in this paper. Inductance and magnetic flux density are calculated, and their results compared with those measured experimentally. The results obtained are good if compared with those measured once the machine have been built. Moreover, the method herein developed is applied to the calculation of air gap lengths in terms of the desired current and inductance. The kind of reactances studied presents windings in both limbs and air gaps in the four corners (joint of limbs and yokes). The main contribution of this paper is the presentation of a method of industrial application, to be easily developed, with a very important reduction in the time of machine calculation (due to the decrease in the number of nodes and elements compared with the three-dimensional model) for the determination of the air gap length in ...
2000-08-01
Comparison of energy flows in deep inelastic scattering events with and without a large rapidity gap
Energy Technology Data Exchange (ETDEWEB)
Energy flows in deep inelastic electron-proton scattering are investigated at a centre-of-mass energy of 296 GeV for the range Q{sup 2}{>=}10 GeV{sup 2} using the ZEUS detector. A comparison is made between events with and without a large rapidity gap between the hadronic system and the proton direction. The energy flows, corrected for detector acceptance and resolution, are shown for these two classes of events in both the HERA laboratory frame and the Breit frame. From the differences in the shapes of these energy flows we conclude that QCD radiation is suppressed in the large-rapidity-gap events compared to the events without a large rapidity gap. (orig.)
1994-07-01
Army Transformation to Expeditionary Formations
... gap" between the arrival ofquick response forces, such as the 82nd Airborne Division and the ... nd Airborne is just exactly that, light airborne infantry. ...
2011-05-14
Andreev reflection spectroscopy in MgB{sub 2}
Energy Technology Data Exchange (ETDEWEB)
Our Andreev reflection measurements (Phys. Rev. Lett. 87 (2001) 137005) along with other experiments have led to a general consensus that MgB{sub 2} is a multiband superconductor with two main superconducting gaps closing at the same T{sub c}. Here we show the behavior of the small gap as a function of the temperature and magnetic field. This gap is isotropic with T{sub c} of the bulk material but with a specific small (crossover) critical magnetic field of about 1 T much lower than the real H{sub c2}. The latter field is anisotropic and is rather governed by the large gap and strongly anisotropic Fermi surface of the material.
2003-04-01
International Nuclear Information System (INIS)
The sol-gel-immobilized Tris(2,2'-bipyridyl)ruthenium(II) [Ru(bpy)_3 "2"+] electrogenerated chemiluminescence (ECL) sensor was applied to the reversed-phase high-performance liquid chromatography (HPLC) determination of phenothiazine derivatives (promazine, chlorpromazine, triflupromazine, thioridazine, and trifluoperazine) and erythromycin in human urine samples. In this method, Ru(bpy)_3 "2"+ was immobilized in sol-gel-derived titania (TiO_2)-Nafion nanocomposite films coated on a dual platinum electrode. This method eliminates an extra pump needed for the delivery of Ru(bpy)_3 "2"+ reagent into a reaction/observation zone in front of photomultiplier tube because the immobilized-Ru(bpy)_3 "2"+ is recycled on the electrode surface by an applied potential at +1.3 V versus Ag/AgCl (3 M NaCl) reference electrode. The resulting analytical performances such as detection limit, working range, sensitivity, and measurement precision were slightly worse than those obtained with the ...
2005-06-13
International Nuclear Information System (INIS)
A combined application of several microtechniques is presented and discussed with the Ti/TiO_2 and Zr/ZrO_2-systems as an example. All measurements were carried out on single grains of technical materials in order to detect and quantify the effect of substrate microstructure on the properties of anodic passive films formed potentiodynamically in 0.5 M H_2SO_4 (dU/dt = 20 mVs"-"1). Anisotropy-micro-ellipsometry (AME) was employed to determine the crystallographic orientation of the substrate grains along with passive film thickness and crystallinity in dependence on the anodization potential. Both the isotropic (amorphous) TiO_2- and the anisotropic (crystalline) ZrO_2-films exhibit a systematic dependence of film thickness on the grain orientation. Local LASER-scanning photocurrent measurements (#lambda#=257 nm) on the same grains likewise show a heterogeneity of the photoelectrochemical reactivity in all cases. This is quantitatively explained by the results from local electrochemical ...
1998-03-01
Electrochemical behavior of Ti-Cr alloys in artificial saliva
International Nuclear Information System (INIS)
In this study, the corrosion behavior of commercially pure titanium (c.p. Ti), Ti-6Al-4V and five new experimental Ti-Cr alloys was evaluated through open-circuit potential (OCP) and potentiodynamic polarization measurement in an artificial saliva containing fluoride. Electron spectroscopy for chemical analysis (ESCA) was used to characterize the composition of the passive films on the alloy after potentiodynamic polarization measurement. It was found that in standard artificial saliva the OCP increases with higher Cr content in Ti-Cr alloys. In 0.5% NaF artificial saliva, the OCP decreases with decreasing Cr in Ti-Cr alloys, and all but Ti-5Cr remain consistently higher than those of c.p Ti and Ti-6Al-4V. Linear polarization results show that artificial saliva and artificial saliva containing 0.5% NaF result in different corrosion behavior in Ti-Cr alloys, c.p.Ti and Ti-6Al-4V. The Ti-Cr alloys had greater resistance to corrosion in the fluoride-containing artificial saliva than c.p. ...
2009-11-13
Energy Technology Data Exchange (ETDEWEB)
Chemical looping combustion (CLC) of simulated coal-derived synthesis gas was conducted with NiO oxygen carriers supported on SiO2, ZrO2, TiO2, and sepiolite. The effect of H2S on the performance of these samples for the CLC process was also evaluated. Five-cycle thermogravimetric analysis (TGA) tests at 800 C indicated that all oxygen carriers had a stable performance at 800 C, except NiO/SiO2. Full reduction/oxidation reactions of the oxygen carrier were obtained during the five-cycle test. It was found that support had a significant effect on reaction performance of NiO both in reduction and oxidation rates. The reduction reaction was significantly faster than the oxidation reaction for all oxygen carriers, while the oxidation reaction is fairly slow due to oxygen diffusion on NiO layers. The reaction profile was greatly affected by the presence of H2S, but there was no effect on the capacity due to the presence of H2S in synthesis gas. The presence of H2S decreased reduction ...
2010-01-01
Energy Technology Data Exchange (ETDEWEB)
A small-sized inexpensive carbon dioxide gassensor was prepared using LiTi2 (PO4)3 +0.2Li3PO4 as lithium-ion conductive, solid electrolyte and its detectability and the effects of co-existing gases were examined. The above compound was obtained by the method where a powdery mixture of Li2CO3, TiO2, (NH4)H2PO4 and Li3PO3 was molded in the presence of a sintering assistant, subjected to hydrostatic press, and sintered. Measurements were made on the relation between CO2 concentration and the electromotive force of the CO2 sensor made of the compound and the influence of concentration of coexisting NO2, SO2 or CH4 on the electromotive force. The results are summarized as follows. A linear relation exists between the electromotive force and the CO2 concentration in the range from 80ppm to 1% to show a good agreement between theoretical and experimental results. Coexistence of NO2 the range of 100-4500ppm has no influence on the electromotive force. Coexistence of methane gives a linear ...
1992-10-31
STM studies of CDWs in pure and doped transition metal chalcogenides
Energy Technology Data Exchange (ETDEWEB)
The effects of dilute impurity doping on charge-density wave (CDW) structures and gaps in NbSe{sub 3} 1T-TaS{sub 2} and 2H-NbSe{sub 2} have been studied by using a scanning tunneling microscope (STM) operating at 4.2 K. In Fe doped samples of NbSe{sub 3} the STM spectroscopy measurements indicate that the added impurities can significantly shift the CDW energy gaps. In NbSe{sub 3}, Fe reduces both CDW gaps by 25-30%, and produces changes in the conductance structure relative to the pure material. The images of Fe{sub 0.01}NbSe{sub 3} show that all three surface chains in the unit cell still carry a strong CDW modulation with no evident disorder. However, a change in the relative amplitudes of the high and low temperature CDWs is detected. The effects of Co and Ni impurities on the gaps in NbSe{sub 3} have also been studied. While Co increases both by 25-30%, Ni increases only the high temperature ...
1992-12-01
High frequency breakdown voltage
Energy Technology Data Exchange (ETDEWEB)
This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O{degrees}C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f{sub c}, the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, ...
1992-03-01
Acoustic tunneling through artificial structures: From phononic crystals to acoustic metamaterials
British Library Electronic Table of Contents (United Kingdom)
We present a comparative study on the acoustic tunneling through artificial periodical composites, from phononic crystals to acoustic metamaterials. We find that the features of the acoustic tunneling are closely related with the origins of band gaps. In particular, the band gap associated with the negative effective material parameter in the metamaterial results in a better analog of the tunneling effect to the quantum system.
2011-01-01
Gap-junctional communication of bone marrow stromal cells is resistant to irradiation in vitro
Energy Technology Data Exchange (ETDEWEB)
Bone marrow is one of the most radiosensitive organs. Irradiation causes a marked decrease in the total number of hematopoietic cells in the bone marrow. The reticular meshwork structure of marrow stromal cells, however, is relatively resistant to irradiation. Unimpaired stromal cell structure has been thought to be a prerequisite for the repopulation of hematopoietic cells during recovery from the effects of irradiation. The reticular framework is maintained by cell adhesion apparatuses such as gap junctions. The in vitro radiobiologic survival values of a cloned stromal cell line, H-1/A, were studied (n = 1.8, D0 = 138 cGy). Radiation doses of up to 4000 cGy had no detectable effects on the production of colony-stimulating factor 1. H-1/A cells communicate with each other via gap junctions as determined by the sensitive dye-transfer method. Gap-junctional communication between H-1/A cells was resistant to different levels ...
1990-10-01
Gap-junctional communication of bone marrow stromal cells is resistant to irradiation in vitro
International Nuclear Information System (INIS)
Bone marrow is one of the most radiosensitive organs. Irradiation causes a marked decrease in the total number of hematopoietic cells in the bone marrow. The reticular meshwork structure of marrow stromal cells, however, is relatively resistant to irradiation. Unimpaired stromal cell structure has been thought to be a prerequisite for the repopulation of hematopoietic cells during recovery from the effects of irradiation. The reticular framework is maintained by cell adhesion apparatuses such as gap junctions. The in vitro radiobiologic survival values of a cloned stromal cell line, H-1/A, were studied (n = 1.8, D0 = 138 cGy). Radiation doses of up to 4000 cGy had no detectable effects on the production of colony-stimulating factor 1. H-1/A cells communicate with each other via gap junctions as determined by the sensitive dye-transfer method. Gap-junctional communication between H-1/A cells was resistant to different levels ...
Bypass Flow and Hot Spot Analysis for PMR200 Block-Core Design with Core Restraint Mechanism
Energy Technology Data Exchange (ETDEWEB)
The accurate prediction of local hot spot during normal operation is important to ensure core thermal margin in a very high temperature gas-cooled reactor because of production of its high temperature output. The active cooling of the reactor core determining local hot spot is strongly affected by core bypass flows through the inter-column gaps between graphite blocks and the cross gaps between two stacked fuel blocks. The bypass gap sizes vary during core life cycle by the thermal expansion at the elevated temperature and the shrinkage/swelling by fast neutron irradiation. This study is to investigate the impacts of the variation of bypass gaps during core life cycle as well as core restraint mechanism on the amount of bypass flow and thus maximum fuel temperature. The core thermo fluid analysis is performed using the GAMMA+ code for the PMR200 block-core design. For the analysis not only are some ...
2009-10-15
Bypass Flow and Hot Spot Analysis for PMR200 Block-Core Design with Core Restraint Mechanism
International Nuclear Information System (INIS)
The accurate prediction of local hot spot during normal operation is important to ensure core thermal margin in a very high temperature gas-cooled reactor because of production of its high temperature output. The active cooling of the reactor core determining local hot spot is strongly affected by core bypass flows through the inter-column gaps between graphite blocks and the cross gaps between two stacked fuel blocks. The bypass gap sizes vary during core life cycle by the thermal expansion at the elevated temperature and the shrinkage/swelling by fast neutron irradiation. This study is to investigate the impacts of the variation of bypass gaps during core life cycle as well as core restraint mechanism on the amount of bypass flow and thus maximum fuel temperature. The core thermo fluid analysis is performed using the GAMMA+ code for the PMR200 block-core design. For the analysis not only are some ...
2009-10-01
Solid state and materials research: metal-semiconductor interactions
International Nuclear Information System (INIS)
This section of the report is concerned with the study of the metallisation, oxidation and doping of materials which are of importance to the micro-electronics industry. The Van de Graaff accelerator and radioactive tracers are used for studying surface and sub-surface behaviour of these materials.
Energy Technology Data Exchange (ETDEWEB)
To study CdZnTe as a high energy resolution gamma ray detector with a novel new design, and to build a detector array from the new detector design
2006-12-04
On the theory of mechano-catalytic water-splitting system
Energy Technology Data Exchange (ETDEWEB)
A theory has been developed for the mechano-catalytic water-splitting, which is the system of simultaneous H{sub 2} and O{sub 2} evolution by stirring the powder of an oxide semiconductor in pure water under the condition that the stirring rod must be kept in contact with the surface of the glass vessel. The kinetic equations and the coupling strength of the frictional energy conversion between mechanical and electrical systems are calculated . The total system composed of the formation of the dangling bonds on the glass surface, the trapping of the semiconductor particles at the microcrevice of the glass surface, the strong field inside the fine particles due to the frictional electricity, the mechanism of charge transfer from the semiconductor to the stirring rod, the hopping conduction of positive hole, the electric current density injected into water from the semiconductors, and the tunnel chemical ...
2000-10-01
NASA 2005 STTR Phase 1 Solicitation - NASA's SBIR & STTR Programs
Advanced aerospace vehicles and system components tend to be slim and elastic, ...... In the manufacturing sector, semiconductor manufacturing requires ... The energy generation and storage for modern-day sensor networks, ...... Current NASA roadmaps point towards development of new hydrocarbon fueled engines. ...
Light amplifier with filtering of spontaneous background
Energy Technology Data Exchange (ETDEWEB)
A comparitive analysis is made of the principal characteristics of narrow-band and conventional semiconductor light amplifiers. It is shown that quasi-distributed filtering of the spontaneous radiation ensures a high gain and a low level of the spontaneous noise at the amplifier output.
1980-06-01
High Efficiency Thin-Fili, GaAs Solar Cells - NASA Technical ...
Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...
Feynman lectures on physics, quantum mechanics; Le cours de physique de Feynman mecanique quantique
Energy Technology Data Exchange (ETDEWEB)
This course is based upon lectures in physics given by Professor Feynman at the California institute of technology during 1961 and 1962. This volume is dedicated to quantum physics, semiconductors, symmetry and advanced principles of physics.
2000-07-01
ADVANCED MICROELECTRONICS TECHNOLOGIES FOR - NASA
... and technology-. The United States National Technology Roadmap for Semiconductors [ 11 still ... Moreover, higher volumes of production, better manufacturing capabilities and ... energy-efficient, reliable, high-performance, embedded (real-time), highly miniaturized, .... Optical Computing, Storage, and Communications. ...
International Nuclear Information System (INIS)
In this work, the effects of the focus ion beam (FIB) milling process on the optical properties of semiconductor nanostructures were investigated. With this aim, a sensitive materials system based on InGaAs/GaAs quantum dots with well known and excellent optical properties was selected for the FIB treatment. The FIB technique was used to locally remove a metallic mask deposited on top of the quantum dot sample. The photoluminescence (PL) signal, collected from the circular openings, was used to infer the possible damage effects of the ion beam on the properties of the dots.
2009-06-24
Strained silicon for quantum computing
Energy Technology Data Exchange (ETDEWEB)
Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)
2002-03-07
Stability of coherently strained semiconductor superlattices
International Nuclear Information System (INIS)
The excess energy of several III-V and II-VI strained-layer semiconductor superlattices (AC)_p(BC)_p is studied as a function of the repeat period p and orientation G=[001], [110], [111], and [201], using first-principles calculations. We discover a number of universal features, including the predicted instability for nearly all p's and G's with respect to bulk disproportionation, the identification of chalcopyrite as a metastable ordered structure, and the stability of all thin epitaxial [110] and [201] and most common-anion [001] superlattices relative to coherent phase separation.
Energy Technology Data Exchange (ETDEWEB)
The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)
1998-01-01
British Library Electronic Table of Contents (United Kingdom)
A problem of the catalytic activity definition for metals, binary metallic alloys, and semiconductor materials is considered within new quantum mechanical and electrodynamics approach in the electron theory of catalysis. The quantitative link between the electron structure parameters of the materials and their catalytic activity on example of simple model reactions of the following type are found: H = H+ + e, O2 + e- = O2-. Copyright 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2009
2009-01-01
EDI as a Treatment Module in Recycling Spent Rinse Waters
Energy Technology Data Exchange (ETDEWEB)
Recycling of the spent rinse water discharged from the wet benches commonly used in semiconductor processing is one tactic for responding to the targets for water usage published in the 1997 National Technology Roadmap for Semiconductors (NTRS). Not only does the NTRS list a target that dramatically reduces total water usage/unit area of silicon manufactured by the industry in the future but for the years 2003 and beyond, the NTRS actually touts goals which would have semiconductor manufacturers drawing less water from a regional water supply per unit area of silicon manufactured than the quantity of ultrapure water (UPW) used in the production of that same silicon. Achieving this latter NTRS target strongly implies more widespread recycling of spent rinse waters at semiconductor manufacturing sites. In spite of the fact that, by most metrics, spent rinse waters are of much higher purity than incoming ...
1999-08-11
Effect of elevated temperatures on the performance of an InP cell illuminated by a selective emitter
Energy Technology Data Exchange (ETDEWEB)
The thermophotovoltaic (TPV) option was not selected for further deep space mission technology development in NASA for several reasons. Chief among them was the large radiator required to keep the photovoltaic cells at a sufficiently low operating temperature. This led to significant integration problems with the spacecraft and limited sensor view angles. It is clear that the issue of cell temperature is crucial for space applications because of radiator size and system impact. Many efforts have focused on matching cell band gap to appropriate emitters in the 1 to 2 {mu}m range, resulting in band gaps in the 0.5 to 0.8 eV range. However, low band gaps lead to low open circuit voltages ({approximately}0.25 to 0.45 V) caused by high intrinsic carrier concentrations (n{sub i}{sup 2}). Thus, in order to obtain high performance. Photovoltaic cell temperatures must be kept near room temperature. This leads to the inevitable ...
1999-03-01
Seismic tests of post-tensioned self-centering building frames with column and slab restraints
British Library Electronic Table of Contents (United Kingdom)
Post-tensioned (PT) self-centering moment frames have been developed as an alternative to typical moment-resisting frames (MRFs) for earthquake resistance. When a PT frame deforms laterally, gaps between the beams and columns open. However, the gaps are constrained by the columns and the slab in a real PT self-centering building frame. This paper presents a methodology for evaluating the column restraint and beam compression force based on the column deformation and gap openings at all stories. The method is verified by cyclic tests of a full-scale, two-bay by one-story PT frame. Moreover, a sliding slab is proposed to minimize restraints on the expansion of the PT frame. Shaking table tests were conducted on a reduced-scale, two-by-two bay one-story specimen, which comprises one PT frame ...
2011-01-01
Point contact Andreev reflection spectroscopy of NdFeAsO_0_._8_5
International Nuclear Information System (INIS)
The newly discovered oxypnictide family of superconductors show very high critical temperatures of up to 55 K. Whilst there is growing evidence that suggests a nodal order parameter, point contact Andreev reflection spectroscopy can provide crucial information such as the gap value and possibly the number of energy gaps involved. For the oxygen deficient NdFeAsO_0_._8_5 with a T_c of 45.5 K, we show that there is clearly a gap value at 4.2 K that is of the order of 7 meV, consistent with previous studies on oxypnictides with lower T_c. In addition, taking the spectra as a function of gold tip contact pressure reveals important changes in the spectra which may be indicative of more complex physics underlying this structure. (rapid communication)
2008-09-01
Optimization of band gap of photonic crystals fabricated by holographic lithography
Generally the photonic band gap (PBG) is a multi-variable function of several parameters related to the shape and size of the dielectric columns of photonic crystals (PhCs), and a time-consuming step-by-step scanning process for each parameter has to be used to find their best combination yielding maximum PBG. In this letter, the widely used Nelder-Mead simplex algorithm is introduced to optimize these parameters simultaneously to find a larger PBG for a new kind of two-dimensional (2D) hexagonal GaAs-Air PhC. This structure can be conveniently produced by the single-exposure holographic lithography, and the specific holographic design is also systematically investigated. This study reveals that the band gaps of PhCs made by holographic lithography may be widened by introducing irregularity of the columns and lowering the symmetry of the structure.
2008-01-01
This paper discusses the mechanisms of gas breakdown at low values of pressure and inter-electrode gap, i.e. in the vicinity of the Paschen minimum. In this area of pressure and inter-electrode gap values, breakdown occurs either through gas or vacuum mechanisms, and also the so called anomalous Paschen effect appears. Electrical breakdown of electropositive, electronegative and noble gases has been investigated theoretically, experimentally and numerically. Based on the results obtained, regions in which particular breakdown mechanisms appear have been demarcated. Special attention has been devoted to the anomalous Paschen effect as well as to the avalanche vacuum breakdown mechanism.
2007-08-01
International Nuclear Information System (INIS)
This paper discusses the mechanisms of gas breakdown at low values of pressure and inter-electrode gap, i.e. in the vicinity of the Paschen minimum. In this area of pressure and inter-electrode gap values, breakdown occurs either through gas or vacuum mechanisms, and also the so called anomalous Paschen effect appears. Electrical breakdown of electropositive, electronegative and noble gases has been investigated theoretically, experimentally and numerically. Based on the results obtained, regions in which particular breakdown mechanisms appear have been demarcated. Special attention has been devoted to the anomalous Paschen effect as well as to the avalanche vacuum breakdown mechanism.
2007-08-01
Extraction of biologic particles by pumping effect in a p-shaped ultrasonic actuator
British Library Electronic Table of Contents (United Kingdom)
This paper presents a new method of extracting biologic particles from a mixture of particles. The method is based on the pumping effect in a p-shaped ultrasonic actuator, which has a gap between its two vibrating metal plates. An adhesive tape is placed at a proper position in the gap. Due to the pumping effect which is induced by the sound field in the gap, the particles with smaller mass and radius in the mixture can be pumped up to reach the adhesive tape; while the ones with larger mass cannot. Therefore, the particles with smaller mass and radius can be extracted from the mixture. A theoretical model which can well explain the operation principle and experimental phenomena is developed. By the experimental results and the theoretical analyses based on the model, the validity of the m...
2006-01-01
Electronic properties of low temperature microcrystalline silicon carbide prepared by Hot Wire CVD
Energy Technology Data Exchange (ETDEWEB)
Microcrystalline silicon carbide ({mu}c-SiC) was prepared at low substrate temperatures using Hot Wire chemical vapor deposition (HWCVD). High crystalline volume fractions were achieved at high hydrogen dilution and high deposition pressure. Without intentional doping, such material shows high dark conductivity and high optical absorption below the band gap. The material prepared at low deposition pressure or low hydrogen dilution, on the other hand, shows much lower conductivity and sub-gap absorption, but high spin densities up to 5 x 10{sup 19} cm{sup -3}. This high absorption can be attributed to free carriers, different to {mu}c-Si:H where a correlation between the sub-gap absorption and the spin density is observed.
2008-01-15
An PB?-73C vacuum spark gap with a control circuit based on an inductive energy storage
British Library Electronic Table of Contents (United Kingdom)
The design and operating principle of a small (50 mm in diameter and 100 mm in height) ???-73C vacuum spark gap are described. It is shown that it can be efficiently switched using a control circuit with a low (?900 V) supply voltage, which is based on an inductive energy storage and a diode opening switch that forms a high-voltage igniting pulse with a rise time of nanosecond duration. The ???-73C switching process is investigated at different rise times of igniting voltage pulses and different igniting current amplitudes. The results of tests of the spark gap operating in regimes of switching current pulses with an amplitude of 12 kA and a rise time of 800 ns are presented.
2011-01-01
British Library Electronic Table of Contents (United Kingdom)
Following Hurricane Katrina, the study of cantilevered sheet pile I-wall with gap or partial gap has become one of the central elements of the ongoing investigation pertaining to the re-building of hurricane protection systems in New Orleans, LA. Historically, the US Army Corps of Engineers (USACE) had mostly relied upon the Method of Planes (MOP) analysis procedure for slope stability analysis of I-wall systems. However MOP is a simplified procedure which does not satisfy total equilibrium. Nevertheless, MOP is still considered by USACE as a popular analysis tool because of its simplicity and ease of use in slope stability analysis. This paper demonstrates the applicability and suitability of MOP as a viable analysis tool for the analysis of New Orleans I-wall founded on layered cohesive ...
2011-01-01
International Nuclear Information System (INIS)
(Cu_4_7Zr_1_1Ti_3_4Ni_8)_1_0_0_-_xMo _x bulk metallic glasses (BMGs) with x = 0, 1 and 2 at.% and a bulk metallic glass matrix composite with x = 5 at.% were successfully prepared by water-cooled copper mold casting. The effect of the addition of a small amount of Mo on the glass forming ability (GFA), thermal properties of the base alloy (i.e. x = 0) were investigated by X-ray diffraction (XRD), differential scanning calorimetry (DSC) and differential thermal analyzer (DTA). It is found that the addition of appropriate amount of Mo can enhance the GFA of the Cu-based BMG, as indicated by the increase in the reduced glass transition temperature T _r_g (=T _g/T _l) and the parameter #gamma# (=T _x/(T _g + T _l)) with the increase of Mo. On the other hand, the corrosion resistance of the Cu-based BMGs with different Mo contents was examined by electrochemical polarization and weight loss measurement in 1 mol/L H_2SO_4 and 1 mol/L NaOH solutions, respectively. It is found that the ...
2006-05-05
UK PubMed Central (United Kingdom)
The effect of TP (triosephosphates:glyceraldehyde-3 phosphate, GAP, +dihydroxyacetone phosphate, DHAP) on respiration, phosphorylation and matrix ATP/ADP ratios of isolated oat mesophyll mitochondria...Full Text Available
1985-11-01
Energy Technology Data Exchange (ETDEWEB)
Based on changes to the fuel pin gas gap composition, pin location and assembly location, revisions to the TDD-IB, Part 2 are provided.
1989-07-14
On the temperature dependence of the magnetic excitations
International Nuclear Information System (INIS)
We compare experimental data for temperature dependence of the magnetic order parameter and the magnetic excitations (spin waves) in materials with a quenched orbital moment and a well-defined spin quantum number. It is observed that the thermal decrease of the two quantities proceeds according to the same analytical function of the type y(T)=1-cT"#epsilon# with an identical exponent #epsilon#. This power function applies not only asymptotically for T->0 but holds over a wide temperature range. The exponent #epsilon# is universal, i.e. independent of spin order type and lattice symmetry and depends only on the dimensionality of the relevant interactions and on whether the spin quantum number is integer or half-integer. The different T"#epsilon# functions are identified as representations of stable universality classes. The fact that order parameter and magnetic excitations follow the same T"#epsilon# function shows that the two quantities belong to the same universality class. The ...
2005-07-15
Energy Technology Data Exchange (ETDEWEB)
A model describes the effect of changes to the pore structure on the mechanical properties of semi-coke during coking. The gap tensile experiment makes it possible to determine the mechanical properties of the coke and semi-coke; a theoretical analysis is valid for the deformation of samples in the gap tensile test, by which the gap tensile strength of the coke can be determined, and by which a method for the simultaneous determination of the effective modulus of elasticity was developed. The effect of the pore structure on the mechanical properties is given in semi-empirical equations. The main point here is to check whether a pore in the coke can be regarded as a Griffith crack, and whether the interaction of pores can be neglected. A model which takes the pore distribution into account was also developed and tested. A model for the change of pore structure during coking, which includes the contraction of the semi-coke, ...
1984-01-01
Exploding Bridgewire Electrical System Test Unit.
The object of the test was to develop a method to field test the Exploding Bridgewire (EBW) System for proper functioning prior to use. Two basic designs were conceived and tested. The first design using a two element spark gap and a calibrated fuse link ...
1964-01-01
Effect of Li-Al co-doping on the energy gaps of MgB2
International Nuclear Information System (INIS)
We studied the effects of co-doping with Li and Al on the energy gaps of MgB2 by performing point-contact Andreev-reflection spectroscopy (PCAR) in polycrystalline Mg1-x(Al?Li1-?)xB2 samples with x?0.4. Even though the lattice parameters and the critical temperature of the compound simply scale with the effective Al content ?x, irrespective of the Li concentration, the energy gaps do not. In particular, for a given effective Al content, the comparison with Mg1-y(Al)yB2 with y = ?x shows that the ? bandgap is practically the same while the ? bandgap is higher. A clear gap merging is observed in the most doped sample (x = 0.4) when Tc<20 K. The results are discussed within the two-band Eliashberg theory and compared to the outcomes of first-principles calculations of the effects of Li and Al co-doping on the electronic structure of magnesium diboride.
2009-02-01
Core Synthesis Facility: Bridging the Gap between Chemistry and Biology
UK PubMed Central (United Kingdom)
CF-23“The biggest stumbling block for biological sciences turned out to be synthetic organic chemistry” – Elias A. Zerhouni, Former NIH Director in Chemical...Full Text Available
2010-09-01
Analysis of natural convection in narrow annular gaps of LMFBR
International Nuclear Information System (INIS)
The natural convection characteristics of gas in a vertical narrow annular gap which had its bottom opened to high temperature fluid and its upper shielding exposed to low temperature sealant have been evaluated from simulated fluid experiments using water and from calculations using the three-dimensional thermal hydraulic analysis computer code THERVIS-III. The following results were obtained: (1) The critical Rayleigh number which represented the limit of convection generation increased as the aspect ratios #epsilon#_1 (height/circumference) and #epsilon#_2 (height/gap distance) increased. (2) The flow pattern along the circumferential direction was seen to depend more strongly on the radiant heat from the side wall, rather than the aspect ratios #epsilon#_1 and #epsilon#_2. (3) The temperature difference along the circumferential direction in the annular gap obtained from the calculation code coincided with that obtained ...
Parametric study of the amplification factor in the energy balance method
Energy Technology Data Exchange (ETDEWEB)
This paper represents a parametric study of the amplification factor to account for rebound effects in the Energy Balance Method. Of the 66 distinct cases we chose for our parametric study, the amplification factor of 1.1 seems sufficient except in four borderline cases where the carbon steel pipes are small or have very small gaps between the pipes and the pipe whip restraints. We conclude that the amplification factor generally decreases as the parameters gap size, hinge-to-break distance and overhang increase.
1985-04-01
Identification of data gaps and research needs for solid wastes from synfuel technologies
This report presents an overview of research activity currently being funded by the US Department of Energy (DOE) on solid wastes from coal gasification, coal liquefaction, and oil shale technologies, Projects conducted in the DOE energy technology centers and national laboratories, and in cooperative projects with other government agencies, private industry, and universities are developing the basic and applied technology and data on which present and future fuel-conversion and utilization processes depend. The report identifies data gaps and recommends research needs where warranted.
1982-03-01
Grid-controlled plasma cathodes
International Nuclear Information System (INIS)
Experiments are described on a plasma cathode with biased grids to prevent entry of ions into the electron extraction gap. The cathode has potential applications to the generation of high-current pulsed electron beams. Operation at 20 A/cm"2 is theoretically possible. The source combines the low average power consumption of a plasma cathode with many of the attractive features of thermionic cathodes, such as space-charge-limited extractor gap electron flow, fast turn-on, and no diode closure. Initial experiments are reported at the 2 A/cm"2 level for pulse lengths to 160 #mu#s.
British Library Electronic Table of Contents (United Kingdom)
In many industrialised societies, women remain underrepresented in the sciences, which can be predicted by the gender gap in math achievement at school. Using PISA 2006 data, we explore the role of family background and single-sex schooling in girls' disadvantage in maths in South Korea and Hong Kong. This disadvantage is found to be associated with single-sex schooling, but not with family background. Attending a girls' school confers a benefit only in South Korea, whereas the gendered curriculum counteracts the selectivity advantage of girls' schools in Hong Kong. We find that a gendered social structure prevalent in both societies.
2012-01-01
International Nuclear Information System (INIS)
The Gamma Physics (GaP) program of physical phenomena investigation is proposed on #gamma#p, #gamma#e and #gamma##gamma# colliders at TeV energies. The program contains specialized software (CompHEP system) created for automation of particle interaction processes calculations in the framework of various gauge models. Preliminary physical results are presented (heavy quark production, W, Z production, supersymmetry etc.), and further software development is suggested. (R.P.) 22 refs., 8 figs., 4 tabs.
International Nuclear Information System (INIS)
The paper is concerned with the simulation of practical testing situations which are too difficult and/or expensive to replicate in a laboratory environment. Numerical experiments are described which simulate the differential eddy current probe response to the build-up and chemical flushing of magnetite in the crevice gap of a PWR steam generator unit. The simulation results agree well with the only experimental data available to the authors and lead to the conclusion that conventional differential eddy current probes should be capable of characterizing crevice gap conditions with respect to the presence of magnetite. (author).
1985-01-01
International Nuclear Information System (INIS)
Hitherto in this laboratory, ionization coefficients alpha and attachment coefficients #eta# have been determined from Townsend's discharge experiments by a curve-fitting method. However, the method proved to be laborious, Formulae have been derived in this paper to give value of alpha and #eta# as a function of Isubo, Isub1 and Isub2 where Isubo is the photoelectric current at a gap setting d and Isub2 the current at another gap setting 2 d. The values of alpha and #eta# obtained give currents in agreement to within 3% in the best cases with the observed currents.
Cysteine-containing peptides having antioxidant properties
Energy Technology Data Exchange (ETDEWEB)
The term "homology" or "homologous" means an amino acid similarity measured by the program, BLAST (Altschul et al (1997), "Gapped BLAST and PSI-BLAST: a new generation of protein database search programs", Nucleic Acids Res. 25:33 89 3402), and expressed as --(% identity n/n). In measuring homology between a peptide and a protein of greater size, homology is measured only in the corresponding region; that is, the protein is regarded as only having the same general length as the peptide, allowing for gaps and insertions.
2007-05-15
Bound and resonant surface states at the (110) surfaces of AlSb, AlAs, and AlP
Energy Technology Data Exchange (ETDEWEB)
The dispersion curves E(k-bar) have been calculated for bound and resonant (110) surface states of AlSb, AlAs, and AlP. AlSb is predicted to have no surface states within the bulk fundamental band gap, but AlAs and AlP are predicted to have surface state band minima which are very near the conduction band edge, and could lie either within the gap or immediately above the edge.
1982-07-01
Quantitative genetic activity graphical profiles for use in chemical evaluation
International Nuclear Information System (INIS)
A graphic approach, terms a Genetic Activity Profile (GAP), was developed to display a matrix of data on the genetic and related effects of selected chemical agents. The profiles provide a visual overview of the quantitative (doses) and qualitative (test results) data for each chemical. Either the lowest effective dose or highest ineffective dose is recorded for each agent and bioassay. Up to 200 different test systems are represented across the GAP. Bioassay systems are organized according to the phylogeny of the test organisms and the end points of genetic activity. The methodology for producing and evaluating genetic activity profile was developed in collaboration with the International Agency for Research on Cancer (IARC). Data on individual chemicals were compiles by IARC and by the US Environmental Protection Agency (EPA). Data are available on 343 compounds selected from volumes 1-53 of the IARC Monographs and on 115 compounds identified ...
1990-06-27
Point-contact Andreev-reflection spectroscopy in MgB{sub 2}: The role of substitutions
Energy Technology Data Exchange (ETDEWEB)
We summarize the results of point-contact Andreev-reflection (PCAR) spectroscopy in MgB{sub 2} doped by chemical substitutions, either magnetic (Mn) or non-magnetic (Al,C), obtained by us and by other groups in the last four years. Despite the variety of samples used (crystals and polycrystals of various origin) and some minor differences in the experimental techniques, these measurements have directly provided a complete and consistent picture of the effects of chemical substitutions on the gaps of MgB{sub 2} shedding light on other relevant parameters (scattering rates, DOSs) affected by doping. In Al-doped crystals and polycrystals, the gap amplitudes {delta}{sub {sigma}} and {delta}{sub {pi}} - obtained through a two-band Blonder-Tinkham-Klapwijk (BTK) fit of the Andreev-reflection conductance curves - decrease on increasing the Al content x (i.e. on decreasing the critical temperature of the contacts T{sub c}{sup A}), but remain clearly ...
2007-06-01
Counter-current air-water flow in narrow rectangular channels with offset strip fins
Energy Technology Data Exchange (ETDEWEB)
Counter-current two-phase flows of air-water in narrow rectangular channels with offset-strip fins have been experimentally investigated in a 760 mm long and 100 mm wide test section with 3.0 and 5.0 mm gap widths. The two-phase flow regime, channel-average void fractions and two-phase pressure gradients were studied. Flow regime transition occurred at lower superficial velocities of air than in the channels without fins. In the bubbly and slug flow regimes, elongated bubbles rose along the subchannel formed by fins without lateral movement. The critical void fraction for the bubbly-to-slug transition was about 0.14 for the 3 mm gap channel and 0.2 for the 5 mm gap channel, respectively. Channel-average void fractions in the channels with fins were almost the same as those in the channels without fins. Void fractions increased as the gap width increased, especially at high superficial velocity of air. ...
2003-03-01
Visible-wavelength semiconductor lasers and arrays
Energy Technology Data Exchange (ETDEWEB)
The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.
1996-09-17
The potential of III-V semiconductors as terrestrial photovoltaic devices
Energy Technology Data Exchange (ETDEWEB)
III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article ...
2006-07-01
Solar photochemistry and heterogeneous photocatalysis
International Nuclear Information System (INIS)
The search for alternative energy supplies continues since the oil crisis of 1973. One energy vector is dihydrogen, H_2. Of the group VI hydrides, water has been the focus of most studies in harnessing solar energy and generating H_2. Two basic photochemical strategies have been employed: molecular photocatalytic systems, and semiconductor based photocatalytic systems. The results have not met with the euphoric expectations of the mid-1970's because of the difficulties encountered in H_2O splitting (E"0 S"2 "-/S = + 0.51 eV, NHE) is another vehicle tapped as a potential source of H_2. Heterogeneous photocatalysis utilizing semiconductor particulates and sunlight as the photon source has been successful with interesting quantum efficiencies. To this end, novel photocatalytic devices have been developed; one of these uses two coupled semiconductors to achieve vectorial displacement of the photogenerated reducing and oxidizing ...
Interaction of energetic beams with metals and semiconductors - a computational approach
International Nuclear Information System (INIS)
In a vacuum insulator, the narrow electron beam emitted from the cathode impinges on the anode and raises its temperature and also may produce high thermal stress. This high thermal stress, in conjuction with the surface electrostatic pressure may rupture the surface and detach particles from it. In this thesis, the interaction of high energy electron and laser beams with metals and semiconductors is investigated. The differential equations governing the physical processes involved in the interaction are solved by the finite element method. Effects of beam penetration into the material, variable beam reflectance at the surface, finite beam size and dependence of material properties on temperature are accounted for. The two-phase moving boundary problem, also known as the Stefan problem, is solved by an enthalpy formulation of the heat equation. Material deformation by thermal stresses caused by high temperature gradients and electrostatic forces induced by space ...
1984-01-01
Electronically tunable semiconductor laser (ETL) based on silica Bragg reflectors
We will report on a new type of tunable semiconductor laser, which is based on the electronic selection of one Bragg grating among an array of such gratings in silica. The device that we have built operates at 120 Mb/s but extension to 1 Gb/s for Gigabit-Ethernet applications would be straightforward. In comparison with tunable semiconductor lasers using gratings in the III-V materials, silica gratings offer two significant advantages: 1-wavelength stability and predictability, 2-the ability to phusically overlap many gratings in a compact space in order to enable the selection of a large number of wavelengths for wavelength division multiplexed communications systems. The time required to chagne the wavelength in our laser has not been measured for lack of the necessary electronics but it is expected to be in the microsecond range on the basis of a straightforward calculation. The robust all solid-state nature of our device and its expected ...
2003-12-01
Coated semiconductor devices for neutron detection
Energy Technology Data Exchange (ETDEWEB)
A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and ...
2002-01-01
Tunable single-wavelength semiconductor lasers
Energy Technology Data Exchange (ETDEWEB)
This dissertation deals with both the theoretical and the technological aspects of monolithic tunable lasers, and the experimental techniques for opto-electronic integration. In the theoretical part, the principles and limitations of wavelength tuning and spectral linewidth reduction in monolithic semiconductor lasers are described, with coupled distributed feedback-Fabry Perot (DFB-FP) lasers and long DFB lasers as examples. Stepwise tuning of wavelength over tens of nanometers and continuous tuning over the range of a mode spacing are shown to be possible. Spatial hole burning is found to affect the spectral linewidth of lasers involving strong active gratings. On the technological side, one of the major issues is the fabrication of flexible gratings. Direct-writing techniques, such as focused ion beam (FIB) implantation and e-beam lithography, provide the resolution, flexibility and accuracy that conventional holographic lithography lacks. The parasitic ...
1988-01-01
Technology of GaAs metal-oxide-semiconductor solar cells
The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.
1977-01-01
Energy Technology Data Exchange (ETDEWEB)
In this work it is made a study of the structure and electric properties of chlorate polyethylene (PE-CI) with double and simple bonds obtained by continuous plasma with resistive coupling to 13.5 MHz. The synthesis conditions are power between 10 and 14 W and pressure of (6-7) x 10{sup -2} Torr. The synthesized PE-Cl in that way is soluble in acetone what indicates that probably is formed of short chains and not it shows the generalized inter crossing that is presented in some syntheses by plasma and that it can degrade the electric properties of these polymers. The IR and XPS analysis show the vibration of the C-C, C=C and C-CI bonds. The morphology of the polymer after being dissolved shows a compact and flat configuration. The electric conductivity has an approximately lineal behavior in an interval of 35 to 90% of relative humidity. (Author)
2003-07-01
Surface energy of semiconductors covered with thin layers of various materials
International Nuclear Information System (INIS)
Surface energy of III-V semiconductors ended by (110) clean surface and surface covered by atomic monolayer of aluminium, copper and sulfur has been calculated. We have used the Greens-function technique based on the scheme of linear muffin-tin orbitals in the atomic sphere approximation (LMTO-ASA) for the crystal potential and width the local density approximation (LDA) for electrons. Two types of coverage are considered: full monolayer with two additional atoms per two-dimensional unit cell and half monolayer with one additional atom per unit cell. Full monolayer of metallic atoms increases the surface energy. Cu atoms lead to greater destabilization than Al atoms. Sulfur atoms stabilize (110) surface for all considered compounds. (author)
1997-09-23
International Nuclear Information System (INIS)
An overview on neutron scattering studies of ferromagnetic and antiferromagnetic all-semiconductor superlattices is presented. Diffraction experiments on MnTe/CdTe, MnTe/ZnTe and EuTe/PbTe superlattices show pronounced correlations between the MnTe and EuTe layers across the non-magnetic spaces, even though these layers are antiferromagnetic and the systems are nearly-insulating. Current theory status of these systems is discussed. Diffractometry and reflectometry data from EuS/PbS superlattices reveal pronounced antiferromagnetic coupling between the ferromagnetic EuS block. First polarized neutron reflectometry data from superlattices prepared of a novel ferromagnetic 'spintronics' material, Ga(Mn)As are also presented. (author)
2001-09-23
The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and ...
2001-01-01
Status and progress in ion implantation technology for semiconductor device manufacturing
International Nuclear Information System (INIS)
Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)
1998-12-08
Stability of coherently strained semiconductor superlattices
The excess energy of several III-V and II-VI strained-layer semiconductor superlattices ({ital AC}){sub {ital p}}(BC){sub p} is studied as a function of the repeat period {ital p} and orientation {bold G}=(001), (110), (111), and (201), using first-principles calculations. We discover a number of universal features, including the predicted instability for nearly all {ital p}'s and {bold G}'s with respect to {ital bulk} disproportionation, the identification of chalcopyrite as a metastable ordered structure, and the stability of all thin {ital epitaxial} (110) and (201) and most common-anion (001) superlattices relative to coherent phase separation.
1990-01-01
International Nuclear Information System (INIS)
The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.
2009-01-01
British Library Electronic Table of Contents (United Kingdom)
The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.
2009-01-01
Energy Technology Data Exchange (ETDEWEB)
Mass and charge distributions of products from fission of sup(242m)Am induced by thermal neutrons have been investigated by means of the semiconductor spectrometry of ..gamma.. radiation from a mixture of non-separated fragment nuclei. Specimens of the fissible material have been irradiated in the vertical experimental channel of the research reactor then the measurements have been performed with calibrated semiconductor detectors. Three experiments with substantially different irradiation times have been performed to expand the nomenclature of the investigated fission products. The spectra of ..gamma.. radiation from the mixture of fission products, and time dependences of the counting rates at the total absorption peaks have been handled with computers. The obtained yields are compared with data of previous investigations performed with different experimental methods, as well as with the calculated one.
1985-03-01
Energy Technology Data Exchange (ETDEWEB)
The mass and charge distributions in an unseparated mix of fission product nuclei from thermal-neutron fission of /sup 242m/Am were studied through semiconductor gamma-ray spectrometry. Samples of the fissionable material under study were irradiated in a vertical irradiation tube of the MIFI IRT research reactor. Following irradiation, measurements were made on aperture-calibrated semiconductor detectors. For broader identification of fission fragment nuclides three experiments were conducted that differed substantially in irradiation duration. The spectrum of gamma radiation from the mix of fission products and the time dependences of count rate at total absorption peaks were analyzed on SM-4 and Iskra-226 computers. The values of yields obtained were compared with data of investigations conducted earlier with other experimental methods, and also with the results of calculations.
1985-03-01
We report electronic and magnetic structure of arsenic-doped manganese clusters from density-functional theory using generalized gradient approximation for the exchange-correlation energy. We find that arsenic stabilizes manganese clusters, though the ferromagnetic coupling between Mn atoms are found only in Mn$_2$As and Mn$_4$As clusters with magnetic moments 9 $\\mu_B$ and 17 $\\mu_B$, respectively. For all other sizes, $x=$ 3, 5-10, Mn$_x$As clusters show ferrimagnetic coupling. It is suggested that, if grown during the low temperature MBE, the giant magnetic moments due to ferromagnetic coupling in Mn$_2$As and Mn$_4$As clusters could play a role on the ferromagnetism and on the variation observed in the Curie temperature of Mn-doped III-V semiconductors.
2005-01-01
Energy Technology Data Exchange (ETDEWEB)
Charge transport in disordered organic semiconductors is generally described as thermally activated hopping in a gaussian distribution of localized states. The presence of charge traps is critical to the performance of organic electronic devices, since trapped charge carriers do no longer contribute to the current flow. The trap distribution in the polymer poly(3-hexylthiophene) (P3HT) is investigated by applying the fractional thermally stimulated current technique. Thereby, a low temperatur double-peak distribution has been revealed. One of the peaks is believed to belong to the tail of the intrinsic density of states, whereas the other trap is strongly affected by exposure to oxygen. We discuss the influence of oxygen exposure time on the trap distribution.
2008-07-01
Instruments for X-ray fluorescence analysis and spectrometry
International Nuclear Information System (INIS)
The radionuclide X-ray fluorescence analyzer consists of a source changer and a sample changer. "5"5Fe, "1"0"9Cd and "2"4"1Am are used as excitation sources. The radiation is detected with a semiconductor Si(Li) detector. The complete assembly of the apparatus consists of an imagine unit, a keyboard, a floppy disc drive, a printer, a console and a rack with analog and digital electronics. Its multichannel amplitude analyzer consists of power supplies, a high voltage supply, a linear amplifier, an analog-to-digital converter and a computer. The technical specifications are given. The control and data processing system is controlled with an MHB 8080A microprocessor. Software for semiconductor gamma spectrometry and for quantitative gamma spectrometry will be supplied with the equipment. (E.S.). 3 figs., 4 refs.
High energy heavy ion irradiation in semiconductors
Energy Technology Data Exchange (ETDEWEB)
Pd/n-Si and Pd/n-GaAs devices have been irradiated from high energy ({approx}100 MeV) heavy ions of Au{sup 7+} (gold) and Si{sup 7+} (silicon) to study the irradiation effects in these junction devices on semiconductor substrates. The devices have been characterized from I-V and C-V studies for electronic flow characterization. It has been found that the devices become high resistive on the irradiation and the substrates change the conductivity type from n- to p- on the irradiation of fluence of {approx}10{sup 12}-10{sup 13} ions/cm{sup 2}. The change in conductivity type has been understood as a result of creation of deep acceptors on the irradiation.
1999-07-02
International Nuclear Information System (INIS)
The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.
Focused ion beam preparation of inclined planes in semiconductor materials
International Nuclear Information System (INIS)
Focused ion beam (FIB) micromachining has been used to produce inclined planes on semiconductor surfaces. A 10 keV FIB system, utilising a Ga"+ liquid metal ion source (LMIS), was employed. The ramped surfaces were prepared by digitally deflecting the ion beam in a serpentine fashion over a rectangular area and incrementing the time the beam spends at a pixel, dwell time, line by line. For the conditions used, control in micromachining the inclination of the ramps to the starting horizontal surface is of the order of 1 arc s per scan of the FIB over the area of interest. The possibility of using such surfaces prepared by FIB, along with vacuum growth techniques such as molecular beam epitaxy (MBE), for application to strain relief structures and lateral device production is discussed. (author).
Energetic ion beams in semiconductor processing: Summary of a DOE panel study
Energy Technology Data Exchange (ETDEWEB)
The trend toward smaller dimensions in integrated circuit technology presents severe physical and engineering challenges for ion implantation. These challenges, together with the need for physically-based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in silicon. Recently the DOE Council on Materials requested that our panel examine the current status and future research opportunities in the area of ion beams in semiconductor processing. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. These topics were explored both from the perspective of emerging science issues and technology challenges.
1995-12-31
Electrochemistry of a semiconductor chalcopyrite concentrate leaching by Thiobacillus ferrooxidans
Energy Technology Data Exchange (ETDEWEB)
Using carbon-paste-CuFeS{sub 2} electrodes and a cyclic voltammetric technique, it was found that a large number of intermediate electrochemical oxidation reactions were associated with the dissolution of chalcopyrite in presence and absence of bacteria. The effects of concentrations of copper, ferrous and ferric ions, as well as of agitation on the peaks of cyclic voltammograms were measured. It was established that chalcopyrite oxidation was solid-state controlled as suggested by the data of chronopotentiometric and chronoamperometric measurements. The activation energy of solid state diffusion of chalcopyrite leaching was determined by the Sand's method to be {triangle}E{sub a} = 20.5 kJ. The leaching mechanism is discussed in terms of solid-state properties (energy bonding) of the n-type semiconductor chalcopyrite and energy density states of redox systems of acidic bacterial leach media. A generalized model for the mechanism of chalcopyrite leaching ...
1991-01-01
Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures
The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)
1975-01-01
Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures
International Nuclear Information System (INIS)
The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.
A novel approach for measuring the radial distribution of charge in a heavy ion track
International Nuclear Information System (INIS)
The energy deposited by the passage of a single, energetic, heavy-ion through a semiconductor produces dense electron-hole (eh) pair concentrations near the ion trajectory. The size, shape, and charge density of an ion track represent critical parameters for many models of single event phenomena. The authors describe the design and uses of possible semiconductor test structures for measuring the initial radial distribution of charge and subsequent charge transport in a high energy, heavy-ion track. Numerical simulations show how the test structure can resolve different radial distributions of charge within an ion track. The test structure simulations also show the importance of accurately representing ion track structure in single event effects simulations.
1994-07-18
A model for Schottky-barrier solar cell analysis
A general model for the analysis of metal-semiconductor solar cells is presented. The model takes into account the cell optical properties, carrier recombination effects, semiconductor minority-carrier properties, series resistance, cell thickness, and active surface area. Numerical methods are used to solve the appropriate continuity equations and hence compute the photocurrent density under AMO conditions. The operation of the model is demonstrated using p- and n-type Si and GaAs with Au being taken as the barrier metal. Calculations are presented showing the effect on solar energy conversion efficiency of surface recombination velocity, barrier height, minority-carrier lifetime, barrier metal thickness, collecting grid configuration, and cell thickness. A comparison of practical and computed data for the Au/n-GaAs system yields good agreement. (AIP)
1976-05-01
A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature
Energy Technology Data Exchange (ETDEWEB)
One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.
2008-06-18
Structural, electronic and energetic properties of silicon carbon alloys
International Nuclear Information System (INIS)
We studied the influence of alloying on the structural and electronic properties of the unrelaxed and relaxed Si_1_-_yC_y random alloys by means of ab initio theoretical calculations using two methods: (i) a supercell approach in connection with the plane-wave pseudopotential method; (ii) the full-potential augmented plane-wave plus local orbitals (APW+lo) method. The first method is used to obtain the relaxed atomic structure. The relaxed atomic positions obtained by pseudopotential calculations were used to calculate the band structure via the second method. The local density approximation was used for the exchange and correlation energy density functional. We investigated the lattice parameters and band gap energies. We found that a quite smaller gap appears in the neighborhood of y=0.03125 concentration of C atoms. The band gap shows a large anomalous bowing and is strongly composition dependent. The electron densities ...
2007-01-15
Remodeling of the free electron laser with the L-band linac at Osaka University
International Nuclear Information System (INIS)
The far infrared free electron laser (FEL) has been being developed since 1990 using the L-band electron linac at the Institute of Scientific and Industrial Research, Osaka University. The first lasing was obtained in 1994 at wavelengths from 32 to 40 #mu#m. The FEL is now being modified suitable for user experiments. The wiggler with a fixed magnet gap used in the original FEL has been remodeled to make the magnet gap variable. In order to optimize the variable range of the gap, the gain and the diffraction loss were calculated. The peak gain is calculated to be 270% and the diffraction loss to be 22% at 150 #mu#m. The wavelength is expected to be variable from 25 up to at least 150 #mu#m. The two bending magnets in the optical resonator have been remodeled and the vacuum chambers with larger vertical sizes for them have been newly made so that the diffraction loss in these parts becomes smaller than that in the vacuum ...
1997-02-28
Energy Technology Data Exchange (ETDEWEB)
Using the transfer matrix method we calculate the omni-directional band gap of a 1-D photonic crystal consisting of alternating layers of two dielectric materials A and B with refractive index n{sub A} and n{sub B}, respectively. The refractive index of layer A is constant and the refractive index of layer B varies according to the envelope of a Gaussian function. We find that under certain circumstances it is possible to obtain 100% reflectivity for both polarizations and any value of the incident angle of the electromagnetic waves. Although the structure considered does not posses a higher omni-directional band gap than the periodic sequence of low and high constant refractive indexes, it can be used to produce a new type of omni-directional mirrors without abrupt interfaces. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
2007-07-01
Evaluation of structural integrity of crossover leg piping system with dynamic whip restraints
Energy Technology Data Exchange (ETDEWEB)
Interference between the crossover leg of the Reactor Coolant System(RCS) and the Pipe Whip Restraints(PWR) has brought a degradation issue of the integrity of the Reactor Coolant System in Westinghouse type Nuclear Power Plants(NPPs) of Korea. According to the gap inspection carried out during planned overhaul (year 2000), interference between the crossover leg and the PWR was found in each RCS loop. This plant has had the high vibration problem on the RC pump 'B'. The reason for the high vibration in the RC pump 'B' had been massively surveyed and it was found that the crossover leg of RCS contacted with the PWR in hot condition. Since the contact between the crossover leg and the PWR changes the dynamic characteristics of the piping system for the RCS, this is considered as one reason for the high vibration. And a possibility of overstress on the crossover leg due to the contact with the PWR should be evaluated. Through ...
2001-07-01
Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser
Energy Technology Data Exchange (ETDEWEB)
The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.
1994-07-11
Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser
International Nuclear Information System (INIS)
The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.
Visible semiconductor laser operation below 640 nm at room temperature
International Nuclear Information System (INIS)
Recent progress with the (Al_xGa_1_-_x)_0_._5In_0_._5P alloy system has resulted in laser diodes which operate at room temperature at wavelengths below 640 nm. OMVPE is used to grow the multi-quantum-well devices in a graded-index separate-confinement configuration. Laser threshold currents as low as 75 mA have been achieved.
1988-11-02
Theory of bistability in the face-pumped laser with bimolecular recombination
Steady-state and transient behavior of the longitudinally pumped semiconductor laser is theoretically investigated by using a rate-equation model with distributed gain and photon density. Conditions necessary for bistable operation are derived. Dependencies of such major switching characteristics as turn-on and turn-off powers, delay, and rise times on laser parameters are examined. Influences of spontaneous radiation, impurities, and Auger recombination are studied. The results offer an explanation for the observed nonlinear behavior of face-pumped lasers.
1987-01-01
Search for anisotropy in the L x-gamma angular correlations following the decay of "2"0"7Bi
International Nuclear Information System (INIS)
An investigation of the Ll x-#gamma# angular correlations following the decay of "2"0"7Bi is done by using a Si(Li) semiconductor counter as L x-ray detector. Coincidence measurements at five different angles were made between the 570-keV #gamma# ray (gated in the movable counter) and the Ll x spectrum (displayed in a multichannel analyzer).
International Nuclear Information System (INIS)
Determination of Cr, Fe, Cu, Zn and Pb in drinking water preconcentrated on a chelating ion exchanger of Czechoslovak production is described. The analytical system consisted of a radionuclide source "2"3"8Pu, a Si/Li semiconductor detector and a multichannel analyzer. Results are compared with trehshold limit values recommended for drinking water. (author) 9 refs.; 2 figs.
1992-04-01
Optimizing semiconductor devices by self-organizing particle swarm
A self-organizing particle swarm is presented. It works in dissipative state by employing the small inertia weight, according to experimental analysis on a simplified model, which with fast convergence. Then by recognizing and replacing inactive particles according to the process deviation information of device parameters, the fluctuation is introduced so as to driving the irreversible evolution process with better fitness. The testing on benchmark functions and an application example for device optimization with designed fitness function indicates it improves the performance effectively.
2005-01-01
Monitoring interfacial dynamics by pulsed laser techniques. [Annual report
Energy Technology Data Exchange (ETDEWEB)
Goal was developing optical methods for study of dynamic processes at the electrode/electrolyte interface. In the past year, optical second harmonic generation was used for time-resolved measurements of thallium deposition on Cu(111). The studies of carrier dynamics in photo-excited materials have involved both steady-state and picosecond time-resolved luminescence measurements following photoexcitation of the semiconductor material.
1992-12-31
Medical explorations by radioisotopes in Lebanon
International Nuclear Information System (INIS)
This study mainly concerns medical explorations by radioisotopes. Detectors with medical exams and applications are described. Ionisation chambers, semiconductor detectors and scintillation counters are also presented. Uses of radioisotopes in medicine in vivo and in vitro techniques are explained. Examples of scintiscanning are given like: angiography, nuclear cardiography and thyroid scintiscanning. The importance of the study is to present a panorama of nuclear medicine laboratories -at the time- in hospitals in Lebanon.
Lamp system for uniform semiconductor wafer heating
Energy Technology Data Exchange (ETDEWEB)
A lamp system with a very soft high-intensity output is provided over a large area by water cooling a long-arc lamp inside a diffuse reflector of polytetrafluorethylene (PTFE) and titanium dioxide (TiO.sub.2) white pigment. The water is kept clean and pure by a one micron particulate filter and an activated charcoal/ultraviolet irradiation system that circulates and de-ionizes and biologically sterilizes the coolant water at all times, even when the long-arc lamp is off.
2001-01-01
International Nuclear Information System (INIS)
X-ray scattering methods suitable for the investigation of the morphology and chemical composition of self-organized quantum dots and quantum wires are reviewed. Their application is demonstrated in experimental examples showing that a combination of small angle X-ray scattering with high-resolution X-ray diffraction can reveal both the shape and the chemical composition of the self-organized objects. (author)
2001-09-23
Energy Technology Data Exchange (ETDEWEB)
Elements Ti, Mn, Fe, Ni, Cu, Zn, Pb, Br, Rb and Sr were determined by the method of radionuclide X-ray fluorescence analysis with semiconductor detection in samples of Taraxacum officinale from various localities of Bratislava. The dependence of their content on the source and the degree of the air pollution was found out.
1983-01-01
International Nuclear Information System (INIS)
Elements Ti, Mn, Fe, Ni, Cu, Zn, Pb, Br, Rb and Sr were determined by the method of radionuclide X-ray fluorescence analysis with semiconductor detection in samples of Taraxacum officinale from various localities of Bratislava. The dependence of their content on the source and the degree of the air pollution was found out. (author).
1983-01-01
Final Report: Planetary Instrument Definition and Design Program (PIDDP) Support Project
Energy Technology Data Exchange (ETDEWEB)
The results of Sandia National Laboratories' participation in the NASA Planetary Definition and Design Program are summarized. Areas reported include the characterization of large area cadmium zinc telluride spectrometers and the application of simulation techniques to the prediction of device performance. Also investigated was the response of mercuric iodide devices in the region from 1 to 100 KeV. A literature study to determine the status or radiation damage measurements in room temperature semiconductor devices is also reported.
1999-03-01
International Nuclear Information System (INIS)
Radionuclide X-ray fluorescence method with a Si/Li semiconductor detector and "2"3"8Pu exciting source was used in the determination of Cr, Fe, Ni, Cu, and Zn content in industrial wastewaters. Simultaneously, the effects of the wastewaters on activated sludge biocenose were evaluated. (author) 6 refs.; 1 fig.; 1 tab.
1994-03-01
Determination of Fe and Zn in healing plants by radionuclide X-ray fluorescence analysis
International Nuclear Information System (INIS)
Radionuclide X-ray fluorescence method was used for the determination of Fe and Zn in healing plants (Sage, Peppermint, Stinging, Common Agrimony, Milfoil, Ribwort, Tansy, White Dead-Nettle). "2"3"8Pu exciting source and Si/Li semiconductor detector were used for the determination. (author)
1999-06-01
International Nuclear Information System (INIS)
Radionuclide X-ray fluorescence method with Si/Li semiconductor detector and "2"3"8Pu exciting source was used for the determination of Cu, Ni, Zn and Pb in plant samples (Taraxacum officinale) from various localities near the highway D-61 Bratislava-Trnava (SR). (author) 2 refs.; 1 fig.; 1 tab.
1993-12-01
International Nuclear Information System (INIS)
Radionuclide X-ray fluorescence method with Si/Li semiconductor detector and "2"3"8Pu exciting source was used for the determination of Cu, Ni, Pb, and Zn in soil samples from various localities near the D-61 Bratislava-Trnava highway (CSFR). (author) 1 ref.; 1 tab.
1993-01-01
Energy Technology Data Exchange (ETDEWEB)
Extensive research into the treatment and control of Volatile Organic Compounds (VOCs) from semiconductor industry manufacturing processes has identified the need for alternatives to existing combustion devices. Specifically, semiconductor manufacturing design is moving toward exploiting effective, small-scale, abatement control technologies for specific point-of-use (POU) waste streams associated with a particular component or manufacturing tool. The Silent Discharge Plasma (SDP) developed at Los Alamos National Laboratory is a nonthermal plasma technology created by a dielectric-ballasted electrical discharge. Influent gas-phase pollutants are destroyed in the reactor by the free radicals or electrons generated by the plasma. This paper examines the potential for SDP to be used in niche circumstances for POU control of VOC exhaust streams specific to the semiconductor industry. A sensitivity analysis is presented, showing ...
1997-07-01
Analysis of stability of semiconductor 5-component solid solutions of A"3B"5 compounds
International Nuclear Information System (INIS)
With the use of the regular solutions model the expressions have been derived for calculation of boundaries of spinodal decomposition region as applied to five-component solid solutions of A"3B"5 compounds. The evaluation has been made of fields of stability for Al_x__1Ga_x__2In_1_-_x__1_-_x__2PyAs_1_-_y solid solution.
"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."
2007-02-01
Transverse Imaging of the Proton in Exclusive Diffractive pp Scattering
Energy Technology Data Exchange (ETDEWEB)
In a forthcoming paper we describe a new approach to rapidity gap survival (RGS) in the production of high-mass systems (H = dijet, Higgs, etc.) in exclusive double-gap diffractive pp scattering, pp -> p + H + p. It is based on the idea that hard and soft interactions are approximately independent (QCD factorization), and allows us to calculate the RGS probability in a model-independent way in terms of the gluon generalized parton distributions (GPDs) in the colliding protons and the pp elastic scattering amplitude. Here we focus on the transverse momentum dependence of the cross section. By measuring the ''diffraction pattern'', one can perform detailed tests of the interplay of hard and soft interactions, and even extract information about the gluon GPD in the proton from the data.
2006-04-20
The mass dependence of the signal peak height of a Bragg-curve ionization chamber
International Nuclear Information System (INIS)
The Bragg-curve detector of the parallel plate ionization chamber type generates a signal that is a distorted replica of the original Bragg-curve. In result of this distortion, the signal peak height is not only a function of the atomic number of the heavy ion, as it is often stated, but also of the particle mass. This mass effect was studied with the aid of computer simulation, and it was found to be dependent on the Frisch grid to anode gap width and on the detector gas. The charge resolution of the detector is affected very significantly by this mass dependence of the signal peak height. Therefore, a careful selection of the detector gas and the grid to anode gap width is necessary, if good charge resolution over a wide range of heavy ions is required. (orig.).
Energy Technology Data Exchange (ETDEWEB)
The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).
1991-05-01
Supply chain networks and service-dominant logic: suggestions for future research
British Library Electronic Table of Contents (United Kingdom)
Purpose - The service-dominant (S-D) logic views supply chains as value co-creation networks. These networks promote knowledge growth amongst network members via resource deployment and coordination. The exchange of knowledge and utilization of operant resources among the network members leads to co-created service offerings and value proposals for the end-users, with the ultimate goal of transforming end-user experiences to perceptions of superior value-in-use. The purpose of this paper is to develop an illustration of the value co-creation concept and use this illustration as guide to examine the research gaps that are yet to be tapped in the area where supply chain networks and S-D logic intersects. Design/methodology/approach - The literature on S-D logic is reviewed and research gaps ...
2011-01-01
Soliton microdynamics and thermal conductivity of uranium nitride at high temperatures
British Library Electronic Table of Contents (United Kingdom)
The microdynamics of soliton waves and localized modes of nonlinear vibrations of the acoustic and optical types in uranium nitride has been investigated. It has been shown that, with an increase in the excitation energy in the spectral gap between the bands of optical and acoustic phonons, the energies of solitons increase, whereas the energies of local modes decrease. The previously experimentally observed unidentified quasi-resonant features, which shift in the gap with variations in the temperature, can represent the revealed soliton waves and local modes. The microdynamics of heat conduction of uranium nitride has been studied for the stochastic generation of soliton waves and local modes in the case of spatially distant energy absorption. The thermal conductivity coefficient determin...
2011-01-01
Pressure-dependent photoluminescence study of ZnO nanowires
Energy Technology Data Exchange (ETDEWEB)
The pressure dependence of the photoluminescence (PL) transition associated with the fundamental band gap of ZnO nanowires has been studied at pressures up to 15 GPa. ZnO nanowires are found to have a higher structural phase transition pressure around 12 GPa as compared to 9.0 GPa for bulk ZnO. The pressure-induced energy shift of the near band-edge luminescence emission yields a linear pressure coefficient of 29.6 meV/GPa with a small sublinear term of -0.43 meV/GPa{sup 2}. An effective hydrostatic deformation potential -3.97 eV for the direct band gap of the ZnO nanowires is derived from the result.
2004-09-13
Overview of long-term fuel inventory and co-deposition in castellated beryllium limiters at JET
International Nuclear Information System (INIS)
Morphology of castellated Be tiles from the belt limiter exposed to the JET plasma for 56,000 s was examined on both sides of castellated grooves, on plasma-facing and side surfaces of the tiles. The essential results are (i) deuterium retention in the castellated grooves and in other locations is associated with co-deposition of carbon; (ii) the decay length of deposition in the castellation is around 1.5 mm; (iii) no deuterium is detected in bulk Be; (iv) bridging of gaps by molten beryllium occurred but gaps were not filled with Be; (v) on side surfaces of the tiles the formation of BeO layer was detected at a distance of 20 mm and more from the plasma-facing surface. The consequences for a long-term operation of a reactor-class device with several different plasma-facing materials are addressed.
2009-04-30
Mass dependence of the signal peak height of a Bragg-curve ionization chamber
Energy Technology Data Exchange (ETDEWEB)
The Bragg-curve detector of the parallel plate ionization chamber type generates a signal that is a distorted replica of the original Bragg-curve. In result of this distortion, the signal peak height is not only a function of the atomic number of the heavy ion, as it is often stated, but also of the particle mass. This mass effect was studied with the aid of computer simulation, and it was found to be dependent on the Frisch grid to anode gap width and on the detector gas. The charge resolution of the detector is affected very significantly by this mass dependence of the signal peak height. Therefore, a careful selection of the detector gas and the grid to anode gap width is necessary, if good charge resolution over a wide range of heavy ions is required.
1985-01-01
Energy Technology Data Exchange (ETDEWEB)
A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. In this paper we compare its optical and electrical characteristics with the two more common profiles: the U- and V-shapes. As predicted by the simulations, the new profile combines the advantages of both profiles. Like the V-shape, the exponential shape reduces the amount of Ge in the i-layer, decreasing both the space charge defect density inside the i-layer and the recombination losses. It also improves the electric field. At the same time, the exponential shape generates the same current density as the U-shape.
2002-04-01
Energy Technology Data Exchange (ETDEWEB)
The IEA has identified energy efficiency as essential to achieving a sustainable energy future. In order to improve energy efficiency in industry one of the priority areas for further action is the promotion of more and higher quality energy management (EM) activity. However, there are significant gaps in the current implementation of EM. One method of bridging these gaps would be the creation of an EM Action NetworK (EMAK) to bring practical support to energy managers, connect energy managers to energy policy makers, and interconnect these networks globally. The paper describes possible aims, activities, scope, structure, timelines and approaches related to EMAK and looks at specific tasks that would be important in the set-up and implementation.
2009-12-15
Capacity-coupled multidischarge for atmospheric plasma production
International Nuclear Information System (INIS)
We propose a method of plasma production by capacity-coupled multidischarge (CCMD) at atmospheric pressure. The discharge gaps in the CCMD consist of a common electrode and a number of compact electrodes (CCE) which are directly coupled with small capacitors for quenching the discharge. A simple CCE structure is provided by a cylindrical capacitor, the inner conductor of which is used as a gap electrode. A short pulse discharge is observed to appear homogeneously at each CCE. A charge transfer for the single-pulsed discharge is 10-100 times as large as that of the conventional dielectric barrier discharge. A high efficiency of ozone production has been confirmed in the CCMD using O_2 gas. A device configuration of the CCMD is quite flexible with respect to its geometrical shape and size. The CCMD could be used to produce plasmas for various kinds of industrial applications at atmospheric pressure.
2003-12-29
Andreev reflection spectroscopy of MgB{sub 2} in the vortex state
Energy Technology Data Exchange (ETDEWEB)
Spectroscopy based on the Andreev reflection (AR) process at the interface between the normal metal tip and the superconductor has become one of the very successful methods for studies in novel exotic superconductors. The method is capable to address the size, symmetry as well as multiplicity of the superconducting order parameter. The method provided one of the first evidences of the two-gap superconductivity in MgB{sub 2} with a detailed temperature dependence of the both gaps. A theory treating the Andreev reflection spectroscopy in the mixed state is missing. We analyse the AR spectra of MgB{sub 2} in the mixed state via modelling the magnetic pair-breaking by the increasing spectral broadening parameter {gamma}. As a result a non-trivial pair breaking effect in the {pi}-band is found.
2004-05-01
Environmental Research Database
Objectives1. To establish the present capacity and capability across all the sectors within the UK for - a) Undertaking research in the areas of toxicology and ecotoxicology and environmental hazard and risk assessment work on chemical subtances including emerging containments (e.g. enginerred nanomaterials); and b) Applying these skills in the policy and regulatory context. 2) The range of chemicals involved should include pharmaceutical and medical products, crop protection agents, biocides, vet [continued...]DescriptionThe aim of this project is to identify the current status of the scientific community, areas of expertise, and identify the gaps in skills, knowledge or recruitment. The project will use a questionnaire approach to obtain this information for all sectors of the business community. The analysis will identify the gaps in provision, and areas where investment is needed in future training and/or recruitment.
2009-01-15
Achieving a vanishing SNR-gap to exact lattice decoding at a subexponential complexity
The work identifies the first lattice decoding solution that achieves, in the general outage-limited MIMO setting and in the high-rate and high-SNR limit, both a vanishing gap to the error-performance of the (DMT optimal) exact solution of preprocessed lattice decoding, as well as a computational complexity that is subexponential in the number of codeword bits. The proposed solution employs lattice reduction (LR)-aided regularized (lattice) sphere decoding and proper timeout policies. These performance and complexity guarantees hold for most MIMO scenarios, all reasonable fading statistics, all channel dimensions and all full-rate lattice codes. In sharp contrast to the above manageable complexity, the complexity of other standard preprocessed lattice decoding solutions is shown here to be extremely high. Specifically the work is first to quantify the complexity of these lattice (sphere) decoding solutions and to prove the surprising result that the complexity ...
2011-01-01
A computational study of aluminum phosphide nanotubes
British Library Electronic Table of Contents (United Kingdom)
Abstract Electronic structures of two representative zigzag and armchair models of aluminum phosphide nanotube (AlPNT) were investigated by density functional theory calculations. The structures were optimized and the bond lengths, tip diameters, band gaps, and dipole moments were calculated. Moreover, the quadrupole coupling constants (CQ) were calculated for the Al-27 atoms of the optimized structures. The same values of AlP bond lengths were calculated for both models. The larger value of band gap of armchair model than the zigzag model indicated the stronger dielectric property for the former model. The values of CQ(27Al) were the largest for the Al atoms placed at the tips of both zigzag and armchair AlPNT than other Al atoms, which could reveal dominant role of the Al atoms placed at...
2011-01-01
Tidal spin-up and magnetic braking in cataclysmic variables
International Nuclear Information System (INIS)
Based on proposed models for the tidal spin-up and magnetic braking of stars with a convective outer envelope, it is suggested that the rotation of secondaries in cataclysmic variables is not necessarily synchronized with the orbital revolution. This may provide an explanation for the observed large range in the mass transfer rate (at the same orbital period) of cataclysmic variables above the period gap. (author).
The influence of stray radiation on image quality
International Nuclear Information System (INIS)
The present state of knowledge on the influence of stray radiation on image quality and its physical description and quantification is summarized. Experimental results on the influence of physical parameters on the fraction of scattered radiation and the effect of scatter reduction by air gap technique and secondary radiation grids are committed. Open theoretical and practical problems and the limitations of common methods of scatter reduction are pointed out. (author).
Structural transformation and superconductivity in A-15 compounds
International Nuclear Information System (INIS)
The correlation between superconductivity and structural transformation in the A-15 compounds are examined in a unified way on the basis of the Gor'kov three-dimensional model and the anisotropic pairing interaction. The temperature dependence of the elastic modulus, the strain order parameter and the energy gaps of superconductivity are obtained and compared with the experimental data. (auth.).
Solar receiver enclosure enhancement by controlled directional scattering
Energy Technology Data Exchange (ETDEWEB)
The interest in efficient solar collector design has stimulated investigation of two-dimensional (trough-like) cavity structures. A novel principle for designing cavity enclosures is described. The present method maintains high transmission albeit at the expense of some concentration in the presence of gaps as large as the radius between reflector and receiver. The new method can be applied to advantage to nonimaging concentrator design as well as to line focus concentrators.
1980-01-01
Energy Technology Data Exchange (ETDEWEB)
A review of fission product yields and delayed neutron data for Np-237, Pu-242, Am-242m, Am-243, Cm-243 and Cm-245 has been undertaken. Gaps in understanding and inconsistencies in existing data were identified and priority areas for further experimental, theoretical and evaluation investigation detailed. (author)
1991-07-01
International Nuclear Information System (INIS)
A review of fission product yields and delayed neutron data for Np-237, Pu-242, Am-242m, Am-243, Cm-243 and Cm-245 has been undertaken. Gaps in understanding and inconsistencies in existing data were identified and priority areas for further experimental, theoretical and evaluation investigation detailed. (author)
1990-11-06
Results for the structural properties of random heaps of hard disks
Energy Technology Data Exchange (ETDEWEB)
The average angle of repose and the packing density of random planar heaps of hard disks falling ballistically onto a sticky base line, where the first layer of disks is quenched in random positions, are computed for heaps with a small fixed number of gaps in the base layer. The results we find appear to be almost independent of the size of the heap and they agree with those obtained from computer simulations of large systems.
1995-01-01
UK PubMed Central (United Kingdom)
We demonstrate that expression of the UGA1, CAN1, GAP1, PUT1, PUT2, PUT4, and DAL4 genes is sensitive to nitrogen catabolite repression. The expression of all these genes, with the exception of UGA1...Full Text Available
1993-01-01
Energy Technology Data Exchange (ETDEWEB)
Point-contact (PC) investigations on the title compound in the normal and superconducting (SC) state (T{sub c}{approx_equal}10.6 K) are presented. The T-dependence of two SC gaps in TmNi{sub 2}B{sub 2}C determined by Andreev-reflection spectroscopy deviates from the BCS behavior in displaying a maximum at about T{sub c}/2. Additional evidence for the presence of a 2nd gap half as large as the main gap is given. For the first time ''reentrant'' features were found in the Andreev-reflection spectra measured in magnetic fields. The PC spectroscopy of the fermion-boson interaction in TmNi{sub 2}B{sub 2}C reveals a pronounced phonon maximum at 9.5 meV and a more smeared one around 15 meV, while at higher energies the PC spectra are almost featureless. Additionally, the intense peak slightly above 3 meV observed in the PC spectra of TmNi{sub 2}B{sub 2}C, is presumably caused by ...
2009-07-01
PBG structures for multi-beam devices
International Nuclear Information System (INIS)
Photonic band gap structures with single or multiple defects show potential for use in single-beam and multi-beam klystrons and particle accelerators. The primary concerns are the coupling between the modes at each individual defect site and the damping of unwanted higher order modes. A conceptual design of a PBG based, multi-beam klystron and methods to damp HOMs and to cool and tune the structure are presented.
2002-12-12
International Symposium on Magnetic Suspension Technology. Part 2
International Nuclear Information System (INIS)
In order to examine the state of technology of all areas of magnetic suspension and to review related recent developments in sensors and controls approaches, superconducting magnet technology, and design/implementation practices, a symposium was held. The proceedings are presented. The sessions covered the areas of bearings, sensors and controls, microgravity and vibration isolation, superconductivity, manufacturing applications, wind tunnel magnetic suspension systems, magnetically levitated trains (MAGLEV), space applications, and large gap magnetic suspension systems.
1991-08-19
Influence of microwaves on the order parameter relaxation time of superconducting aluminium
Energy Technology Data Exchange (ETDEWEB)
Experimentally it is found that at constant temperature the order-parameter relaxation time, tausub(..delta..), decreases with increasing power of the microwaves, coupled into a superconducting strip. If the same increase in critical current, that corresponds with a given power of the microwaves, is obtained by lowering the temperature, the decrease in tausub(..delta..) is smaller. This reflects the fact that quasiparticles are removed more efficiently from the gap edge by microwaves than by lowering the temperature in equilibrium. A modified time-dependent Ginzburg-Landau equation is shown to describe these results adequately.
1982-04-01
Identifying the Key Weaknesses in Network Security at Colleges.
A new study identifies and ranks the 10 security gaps responsible for most outsider attacks on college computer networks. The list is intended to help campus system administrators establish priorities as they work to increase security. One network security expert urges that institutions utilize multiple security layers. (DB)
1999-12-01
IDEAS: Regional Science and Urban Economics, Elsevier
... (restricted)] 2009, Volume 39, Issue 5 523-529 Parents, peers, or school inputs: Which components of school outcomes are capitalized into house value? by Brasington, David M. & Haurin, Donald R. [Downloadable! (restricted)] 530-541 Trade liberalisation and agglomeration with firm heterogeneity: Forward and backward linkages by Okubo, Toshihiro [Downloadable! (restricted)] 542-552 Alternative measures of homeownership gaps across segregated ...
Disk's Spiral Arms Point to Possible Planets
National Aeronautics and Space Administration (NASA)
Simulations of young stellar systems suggest that planets embedded in a circumstellar disk can produce many distinctive structures, including rings, gaps and spiral arms. This video compares computer simulations of hypothetical systems to an image of system SAO 206462 taken by the Subaru Telescope and its HiCIAO instrument. n nCredit: NASA Goddard Space Flight Center/NCSA
2011-10-18
UK PubMed Central (United Kingdom)
1. Using a grease-gap recording technique we have investigated the effects of some antagonists of P2-purinoceptors on the depolarization of the rat isolated superior cervical ganglion evoked by 100...Full Text Available
1995-06-01
Defect influence on the T/sub c/ of A-15 compounds
The defect-induced electron lifetime and energy-gap anisotropy effects on the T/sub c/ of the A-15 compounds are examined. A self-consistent model calculation demonstrates that the various defect dependences of T/sub c/ can be qualitatively understood in terms of the electron-lifetime effect.
1979-10-01
Defect influence on the T/sub c/ of A-15 compounds
International Nuclear Information System (INIS)
The defect-induced electron lifetime and energy-gap anisotropy effects on the T/sub c/ of the A-15 compounds are examined. A self-consistent model calculation demonstrates that the various defect dependences of T/sub c/ can be qualitatively understood in terms of the electron-lifetime effect.
Preparation of the clinician to work in multicultural contexts involves the identification of a range of skills, knowledge and values. The field of narrative medicine as well as an increased understanding of the dynamics of interpreting are areas which can add considerably to clinical effectiveness. The paper outlines some cornerstones of narrative medicine and their potential application to the field of speech-language pathology and audiology. PMID:12037426
Cosmological BCS condensate as dark energy
We argue that the occurrence of late-time acceleration can conveniently be described by first-order general relativity covariantly coupled to fermions. Dark energy arises as a gravitationally driven BCS condensate of fermions which forms in the early universe. At late times, the gap and chemical potential evolve to have an equation of state with effective negative pressure, thus naturally leading to acceleration.
2009-01-01
Cooling device for rotors of multistage axial steam turbines
International Nuclear Information System (INIS)
The invention concerns an improvement of a cooling device for rotors of multistage axial steam turbines by providing in the first stage of each group of turbine stages a circulation loop connecting the wheel chamber on the inlet side of the rotor disc of the first stage with the wheel chamber on its outlet side. This is to cause the cooling effect not to be hampered by gap widths of the seal in the bottom range of the rotor blades changing during operation. Design particulars are described in detail. (UWI).
Energy Technology Data Exchange (ETDEWEB)
(1) To determine the accuracy of computed tomography (CT) in the evaluation of ligament tear and avulsion in patients with tibial plateau fracture. (2) To evaluate whether the presence or severity of fracture gap and articular depression can predict meniscal injury. A fellowship-trained musculoskeletal radiologist retrospectively reviewed knee CT and MRI examinations of 41 consecutive patients presenting to a level 1 trauma center with tibial plateau fractures. Fracture gap, articular depression, ligament tear and footprint avulsions were assessed on CT examinations. The MRI studies were examined for osseous and soft tissue injuries, including meniscal tear, meniscal displacement, ligament tear, and ligament avulsion. CT demonstrated torn ligaments with 80% sensitivity and 98% specificity. Only 2% of ligaments deemed intact on careful CT evaluation had partial or complete tears on MRI. Although the degree of fracture gap ...
2007-02-15
Characteristics of boiling transition of tight lattice rod assembly
International Nuclear Information System (INIS)
Critical power characteristics of tight lattice rod assembly was investigated using a simple-shaped experimental apparatus. An electrically heated rod with four spacers was placed in a circular tube, and boiling transition condition for a rod in an annular geometry was clarified varing annulus clearance. It was found that critical heat flux depends strongly on the clearance accoding as the gap becomes smaller. This results was compared with KfK correlation and the trends were well correlated. (author).
Energy Technology Data Exchange (ETDEWEB)
The authors investigate the breakdown luminescence spectra in reverse-biased p-n heterojunctions based on gallium and aluminum phosphides and arsenides for the purpose of determining their behavior as lasing and photodetection materials. Data are given on temperature coefficients, band gap structure, bremsstrahlung, hot carrier mobility and photon emission, and transition and recombination parameters.
1987-08-01
UK PubMed Central (United Kingdom)
The structure of unintegrated human immunodeficiency virus type 1 (HIV-1) DNA from acutely infected human lymphoid cells was analyzed by nuclease S1 cleavage. We observed a unique, discrete single-stranded...Full Text Available
1991-05-01
Energy Technology Data Exchange (ETDEWEB)
The difficulty in making good Ohmic contact at the interfaces with p-doped ZnSe is an important problem hindering the realization of blue-light-emitting diode lasers based on the II-VI semiconductor technology. So far no metal or semiconductor material has been found to have a low enough barrier at the (001) interface with ZnSe. A possible solution to this problem is the insertion of a so-called {ital barrier-reduction layer} at the interface with ZnSe. We have investigated the interface formation energies and valence-band offsets at the (001) interface between Al{sub x}Ga{sub 0.5{minus}x}In{sub 0.5}P and ZnSe. The results of our calculations show the existence of a strong interdependence between the valence-band offset and the interface geometric structure. The interface is found to have structural and electronic similarities to the GaAs-ZnSe(001) system. The very low values obtained for the valence-band offset confirm the possibility of using ...
1997-01-01
Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe ...
Energy Technology Data Exchange (ETDEWEB)
An overview is provided of an evolving atomistic and kinetic model of semiconductor growth that unifies the main features of strain relaxation in low and high lattice misfit heteroepitaxy. The model reveals a kinetic pathway for dislocation formation during growth with little or no energy cost at low misfits, thus providing a way out of the longstanding dilemma of too high dislocation nucleation energies predicted by classical theories of the equilibrium behavior of a fixed number of particles at low misfits. The essential kinetic process underlying the model are identified on the basis of comparison of the predictions of kinetic Monte-Carlo simulations of growth with real-time or in-situ data obtained in such experiments as reflection high-energy electron diffraction (RHEED) and scanning probe microscopy (SPM). Relative significance of these atomistic kinetic processes is shown to naturally lead to strain relaxation via defect initiation at low misfits while ...
1996-12-31
Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs
Energy Technology Data Exchange (ETDEWEB)
A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the extended defects and on the surface of a ...
2006-10-15
Energy Technology Data Exchange (ETDEWEB)
Research highlights: {yields} The polarization curve of 316L SS possesses five turning potentials in passive region. {yields} Films formed at turning potentials perform different electrochemical and semiconductor properties. {yields} Dissolutions and regenerations of passive film at turning potentials are obtained by AAS and XPS. {yields} Turning potentials appearing in passive region are ascribed to the changes of the compositions of the passive films. - Abstract: The passivity of 316L stainless steel in borate buffer solution has been investigated by Mott-Schottky, atomic absorption spectrometry (AAS) and X-ray photoelectron spectroscopy (XPS). The results indicate that the polarization curve in the passive region possesses several turning potentials (0 V{sub SCE}, 0.2 V{sub SCE}, 0.4 V{sub SCE}, 0.6 V{sub SCE} and 0.85 V{sub SCE}). The passive films formed at turning potentials perform different electrochemical and semiconductor properties. ...
2010-11-15
Energy Technology Data Exchange (ETDEWEB)
Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material. Thereafter, we established the methodology for the neutron ...
2007-10-15
International Nuclear Information System (INIS)
Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material. Thereafter, we established the methodology for the neutron ...
2007-10-01
Investigation of novel organic n-type semiconductors in photovoltaic bulk heterojunction
Energy Technology Data Exchange (ETDEWEB)
Two novel organic n-type semiconductors are investigated due to their function as electron acceptor for applications in organic electronic devices to widen the knowledge of how molecule structure influences the excitation processes in organic electronics. Bispyrenylfullerene and Octadecyl-Capronacidesterfullerene are C{sub 60} derivates with sidechains more featured compared to the commonly used[6,6] phenyl-C{sub 61}-butyric acid methyl ester (PCBM). In bulk heterojunction devices regioregular poly(3-hexylthiophene) (P3HT) was used as donor. The materials, pristine and in blend, were studied in view of light absorption, their quenching abilities of the P3HT photoluminescence as well as excited states. Furthermore, the spin state of the excited states was determined by light-induced electron spin resonance. Combining these complimentary experimental techniques, we obtained information on the generation of excited states, their nature, and the efficiency of the ...
2009-07-01
Energy Technology Data Exchange (ETDEWEB)
The coherent interaction of femtosecond laser pulses and a thin CdSe sample is investigated both experimentally and theoretically. Observation of coherent phenomena in semiconductors is very rare because the incoherent processes occur in the femtosecond time domain in these materials. One example of such a phenomena is the so called optical Stark effect of exciton where a blue shift of the exciton resonance occurs as a result of pumping below the bandgap. The coherent effects involving band-to-band and also exciton transitions. Using femtosecond transmission measurements clear evidence was observed for coherent interference effects of the light field and the driven material polarization. These interferences manifest themselves as oscillatory structures in the differential transmission spectra. The oscillatory features are explained by comparison with a semiclassical theory. Examples of the computed results are presented for different time delays between probe and ...
1987-01-01
Electronic structure of passive films formed on molybdenum-containing ferritic stainless steels
Energy Technology Data Exchange (ETDEWEB)
The effect of molybdenum on the electronic structure of the passive films formed on ferritic (Fe-Cr and Fe-Cr-Mo) stainless steels is examined by capacitance and photoelectrochemical measurements. The capacitance study is supported by a mathematical analysis of the Schottky barrier developed at the semiconductor-electrolyte interface in the case of a semiconductor with multiple bulk electronic states in the bandgap. The numerical simulations, based on the more general Mott-Schottky relation proposed, are in good agreement with the experimental results. It can be concluded that the capacitance behavior of the passive films is related to the contributions of a shallow donor level very close to the conduction band and a deep donor level at about 0.4 eV below the conduction band. The addition of molybdenum decreases the donor density of the deep level. Photoeffects observed for subbandgap photon energies reveal that this deep donor level behaves ...
1996-10-01
Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications
Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.
2004-09-01
Development of transition metal semiconductors for photoelectrolysis of water. Final report
Energy Technology Data Exchange (ETDEWEB)
This report discusses the development of transition metal oxide semiconductors for photoelectrolysis of water. More specifically, it involves preparation of TiO/sub 2/ films by sputtering and evaluating their physicochemical characteristics primarily as they relate to the behaviour of the films as photoanodes. Impedance, photoelectrochemical, and photoconduction properties of TiO/sub 2/ films sputtered in pure O/sub 2/ onto heated substrates have been determined as a function of O/sub 2/ pressure during sputtering, film thickness, Pt overcoating, and cathodic treatment. The capacitance data before cathodic treatment are of the form expected. The capacitance is essentially independent of potential, while for potentials increasingly cathodic of this value, the capacitance increases very rapidly. Cathodic treatment alters the impedance characteristics of the films but leads to either no detectible change in their photoelectrochemical properties or to an increase in ...
1981-03-27
Development of GaInAsP for GaInAsP/Ge cascade solar cells
Energy Technology Data Exchange (ETDEWEB)
Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. A proposed structure for the GaInAsP/Ge cascade cell is also given.
1992-12-01
Current trends in ion implantation
Energy Technology Data Exchange (ETDEWEB)
As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing ...
2001-07-01
Energy Technology Data Exchange (ETDEWEB)
To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs reactions studied are ...
1987-09-01
Characterization of 3D thermal neutron semiconductor detectors
International Nuclear Information System (INIS)
Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an appropriate neutron converter such as 6LiF. These devices have limited detection efficiency of not more than 5%. The detection efficiency can be increased by creating a 3D microstructure of dips, trenches or pores in the detector and filling it with a neutron converter. The first results related to the development of such devices are presented. Silicon detectors were fabricated with pyramidal dips on the surface covered with 6LiF and then irradiated by thermal neutrons. Pulse height spectra of the energy deposited in the sensitive volume were compared with simulations. The detection efficiency of these devices was about 6.3%. Samples with different column sizes were fabricated to study the electrical properties of 3D structures. Charge collection efficiencies in silicon ...
2007-06-11
Angular sensitivity distribution of detectors for BNCT
Energy Technology Data Exchange (ETDEWEB)
The research on the therapy of brain tumors and others by the thermal neutron irradiation using research reactors is to kill tumor cells by accumulating boron at a tumor part, and using {alpha} particles and {sup 7}Li generated by {sup 10}B(n, {alpha}){sup 7}Li reaction of thermal neutrons, which is known as boron neutron capture therapy (BNCT). In Japan Atomic Energy Research Institute, the medical irradiation facility was installed in the thermal neutron column of the JRR-2, and as of March, 1994, 22 cases of irradiation have been carried out. In order to monitor the variation of thermal neutron flux during irradiation, the real time measurement using a simultaneous monitor is carried out, but there is the variation of measured values in the Si semiconductor, p-n junction detector possibly due to its direction dependence. The experiment was carried out to quantity the direction dependence of the detector by using the neutron radiography facility at the JRR-3M. Si ...
1995-03-01
Visible semiconductor lasers with the AlGaInP materials system
International Nuclear Information System (INIS)
The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.
1988-11-02
Transient optical and electrical effects in polymeric semiconductors
Energy Technology Data Exchange (ETDEWEB)
Classical semiconductor physics has been continuously improving electronic components such as diodes, light-emitting diodes, solar cells and transistors based on highly purified inorganic crystals over the past decades. Organic semiconductors, notably polymeric, are a comparatively young field of research, the first light-emitting diode based on conjugated polymers having been demonstrated in 1990. Polymeric semiconductors are of tremendous interest for high-volume, low-cost manufacturing (''printed electronics''). Due to their rather simple device structure mostly comprising only one or two functional layers, polymeric diodes are much more difficult to optimize compared to small-molecular organic devices. Usually, functions such as charge injection and transport are handled by the same material which thus needs to be highly optimized. The present work contributes to expanding the ...
2009-05-28
Sulfuric acid/hydrogen peroxide rinsing study
Energy Technology Data Exchange (ETDEWEB)
Sulfuric acid hydrogen peroxide mixtures (SPM) are commonly used in the semiconductor industry to remove organic contaminants from wafer surfaces. This viscous solution is very difficult to rinse off water surfaces. Various rinsing conditions were tested and the resulting residual acid left on the water surface was measured. Particle growth resulting from incomplete rinse is correlated with the amount of sulfur on the wafer surface measured by Time of Flight Secondary Ion Mass Spectroscopy (TOF-SIMS). The amount of sulfur on the wafer structure after the rinse step is strongly affected by the wafer film type and contact angle prior to the SPM clean.
1995-12-01
Solid state and materials research
International Nuclear Information System (INIS)
Within about 10 years, microelectronic devices will be made with more than a billion (10"9) electronic components per chip. To implement such a sophisticated technology it will be essential to have a fundamental understanding of the solid state interaction between the different materials in thin film semiconductor structures. This is the main purpose of this research program. Characterization and analysis is carried out mainly by Rutherford backscattering spectrometry and channelling using accelerated nuclear particles from the Van de Graaff accelerator, while radioactive isotopes provide information about interaction mechanisms. 6 figs., 1 ref.
Solid State Photovoltaic Research Branch
Energy Technology Data Exchange (ETDEWEB)
This report summarizes the progress of the Solid State Photovoltaic Research Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30,l 1989. Six technical sections of the report cover these main areas of SERIs in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Laser Raman and Luminescence Spectroscopy. Sections have been indexed separately for inclusion on the data base.
1990-09-01
Real time neutron dosemeter response calculations
International Nuclear Information System (INIS)
The response of a real time neutron dosemeter using a thin LiF target sandwiched between tow parallel surface barrier semiconductor detectors is studied for different neutron distributions and different angles of incidence. Calculations of the response function defined for a simultaneous detection by the two detectors of the particles emitted when the reaction "6Li(n,t)#alpha# occurs in the target are fulfilled by geometrical considerations of the reaction kinematics and the differential cross section variations. Finally, the efficiency of the studied detection systems is analyzed for dosimetric uses. (author).
1996-04-01
Radiation hardening of semiconductor parts
International Nuclear Information System (INIS)
This chapter is an overview of total-ionizing-dose and single-event hardening techniques and should be used as a guide to a range of research publications. It should be stressed that there is no clear and simple route to a radiation-tolerant silicon integrated circuit. What works for one fabrication process may not work for another, and there are many complex interactions within individual processes and designs. The authors have attempted to highlight the most important factors and those process changes which should bring improved hardness. The main point is that radiation-hardening as a procedure must be approached in a methodical fashion and with a good understanding of the response mechanisms involved.
Position-sensitive spectroscopy of 252Cf fission fragments
International Nuclear Information System (INIS)
The fission fragments from spontaneous fission of 252Cf have been measured with the spectrometric and position-sensitive semiconductor pixel detector Medipix2. Fragments are identified by pattern recognition of clusters generated in the Medipix2 pixel matrix sensor upon heavy particle hit. From analysis of cluster area, the distribution of kinetic energy of fission fragments is obtained. Together with a novel USB readout interface, the Medipix2/USB system operates as active nuclear emulsion in single-quantum and on-line tracking mode.
2007-05-11
Nanostructure of Si-Ge near-surface layers produced by ion implantation and laser annealing
International Nuclear Information System (INIS)
An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)
2001-09-23
Multielement analysis of air samples
International Nuclear Information System (INIS)
Radionuclide X-ray fluorescence analysis for nondestructive determination of Fe, Zn, Pb, and Br in air samples collected on nitrocellulose membrane filter Synpor 4 is described. A "2"3"8Pu source for the excitation and a semiconductor Si/Li detector for the detection of characteristic and L-fluorescent radiation of the above elements were used. A correction method based upon the measurements of simple or multiple Compton scattering for compensation of varying mass per unit area values in sample deposits was theoretically proposed and experimentally tested. The results obtained both with and without the correction were compared and good agreement with those given by atomic absorption spectrometry was observed. (author).
1981-01-01
Multielement XRF-analysis of blood from patients with dilated cardiomyopathy
International Nuclear Information System (INIS)
Radionuclide x-ray fluorescence analysis was used for the determination of Fe, Zn, Br and Rb levels in whole blood from dilated cardiomyopathy patients and from a control group. The XRF-system consisted of a radionuclide source "1"0"9Cd, a semiconductor Si/Li detector connected to a multichannel analyzer. Fe content in blood of patients was significantly lower than that of the control. Zn content showed no deviation from normal range. Values for Br and Rb in patients highly exceed the range reported for them. (author) 4 tabs.; 9 refs.
1991-03-01
Identification of elements in plant drugs and their water infusion using X-ray fluorescence analysis
International Nuclear Information System (INIS)
The present work gives preliminary results of analysis of drug mixtures (NEPHROSAL tea bag) and its water infusion. In a sample of dried drugs the elements K, Ca, Mn, Fe, Ni, Cu, Zn, Br, Rb, Sr, Pb were identified, whereas in their water infusion only Ca, Mn, Zn and Sr were found. The method applied was radionuclide X-ray fluorescence analysis using a radionuclide source "1"0"9Cd, a Si/Li semiconductor detector and a multichannel analyzer Canberra 8100. (author) 6 refs.; 3 figs.
8100-01-01
High performance AlGaN/GaN HEMTs with 2.4 #mu#m source-drain spacing
International Nuclear Information System (INIS)
This paper describes the performance of AlGaN/GaN HEMTs with 2.4 #mu#m source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 #mu#m source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)
2010-03-01
Energy Technology Data Exchange (ETDEWEB)
The physics of microcavities have been a subject of intense study over the past 25 years. This work stimulated a large body of experimental and theoretical work on the optimization of the light extraction properties of light-emitting diodes. Not only has this led to the current high efficiency microcavity LEDs but also to the high brightness LEDs based on other approaches, which are presently available on the market. An overview of the state of the art of planar semiconductor microcavity LEDs will be presented. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
2005-09-01
Electron microscopy and X-ray diffraction study of AlN layers
International Nuclear Information System (INIS)
AlN nanocrystalline layers and superstructures are used in the modern optoelectronic technology as reflecting mirrors in semiconductor layers. In the present work the properties of AlN films prepared by sputtering methods from an AlN target in reactive Ar + N plasma were investigated. The characterization was performed with HRTEM, SEM, glancing angle XRD and RBS methods. The present measurements confirmed the polycrystalline structure of AlN layers and enabled the evaluation of their grain size. The roughness and thickness of the layers were additionally determined by ellipsometric and profilometric measurements. (author)
2001-09-23
EXAFS Study of Semimetal-Semiconductor Transition of Bismuth Clusters
International Nuclear Information System (INIS)
Extended X-ray absorption fine structure (EXAFS) measurements of bismuth clusters in the temperature range of 23 -300 K have been performed using synchrotron radiation in order to investigate the size dependent phase transition. The inter-atomic distances around 3.0 A and 3.6 A are attributed to the nearest neighbors within the layer and between layers, respectively. EXAFS functions were analysed by the curve fitting method within a symmetric distribution approximation. The nearest neighbor distance of the 0.5 nm thick films is shorter than that of the 300 nm thick films at all the temperatures, which is related to the reduction of the inter-layer correlation.
2007-02-02
Energy Technology Data Exchange (ETDEWEB)
Alpha particle confinement is necessary for ignition of a D-T tokamak fusion plasma and for first wall protection. Due to high radiation backgrounds and temperatures, scintillators and semiconductor detectors may not be used to study alpha particles which are lost to the first wall during the D-T programs on JET and ITER. An alternative method of charged particle spectrometry capable of operation in these harsh environments, is proposed: it consists of thin foils of electrically isolated conductors with the flux of alpha particles determined by the positive current flowing from the foils. 2 refs., 3 figs.
1994-07-01
International Nuclear Information System (INIS)
Radionuclide X-ray fluorescence method with a Si/Li semiconductor detector and "2"3"8Pu exciting source was used in the study of Mn, Fe, Cu, Zn, and Pb content of solid emissions, raw and final materials of a brick factory. From the point of view of metal content, the working environment if the brick factory is safe for workers. (author) 2 refs.; 2 figs.; 1 tab.
1994-01-01
International Nuclear Information System (INIS)
The ZnO nanorods were used as a template to fabricate nickel nanoclusters by electrodeposition. The ZnO nanorod arrays act as a nano-semiconductor electrode for depositing metallic and magnetic nickel nanoclusters. The growth sites of Ni nanoclusters could be controlled by adjusting the applied potential. Under -1.15 V the Ni nanoclusters could be grown on the tips of ZnO nanorods. On increasing the potential to be more negative the ZnO nanorods were covered by Ni nanoclusters. The magnetic properties of the electrodeposited Ni nanoclusters also evolved with the applied potentials.
2009-12-09
Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.
1986-03-03
International Nuclear Information System (INIS)
The aim of this thesis is the study of new systems devoted to the real time neutron spectrometry and dosimetry. The microelectronics technologies have been used to research a micro system integrating sensor and data processing in real time. The multi range sensor is based on many pair of semiconductor diodes placed face to face and covered by lithium fluoride. The sensor has been designed and its behavior has been simulated. Its operating in reference neutrons beams has been analyzed. (A.L.B.)
1998-01-01
Chemical sensitivity of Mo gate Mos capacitors
International Nuclear Information System (INIS)
Mo gate Mos capacitors exhibit a negative shift of their C-V characteristic by up to 240 mV, at 125 C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relevant equivalent circuits are reviewed. The single-state interface state density, at the semiconductor-dielectric interface, decreases from 2.66 x 10"1"1 cm"-"2 e-v"-"1, in pure nitrogen, to 2.5 x 10"1"1 cm"-"2 e-v"-"1 in 1000 ppm hydrogen in nitrogen mixtures, at this temperature. (Author)
Band structure and electron-electron interaction in samarium monosulphide
International Nuclear Information System (INIS)
The method of augmented plane wave (APW) is used to obtain the band structure of the SmS compound in the semiconductor and metal phases. The noncentral part of the Coulomb electron-electron interaction is taken into account in the first order perturbation theory. In this case the radial part of the wave APW-function is taken as a zero approximation function. A multiplet structure of the excited configuration f"5d, which provides a good description of the X-ray photoelectron spectrum and optical spectrum epsilon_2(#omega#), is obtained. The configuration fd is calculated for the interpretation of the optical absorption spectrum of the samarium monosulfide metal phase. (author).
3. Physical foundations and methodology of radionuclide X-ray fluorescence analysis
International Nuclear Information System (INIS)
The physical foundations are described of radionuclide X-ray fluorescence analysis (RXFA) and the table shows the values of K- and L-absorption thresholds and the K- and L-line energies of elements. The calculation of the intensity of characteristic radiation during RXFA proceeds from relations derived for conventional X-ray fluorescence analysis. The choice of the radionuclide source is ruled by the nature of the analysed substance and the used detection technique. The diagram shows the areas of radionuclide sources and the energy of the fluorescence radiation of elements. The table shows the spectra of radionuclide sources suitable for the purposes of RXFA measured by semiconductor Si(Li) and Ge(Li) detectors. (ES).
1983-12-01
Energy Technology Data Exchange (ETDEWEB)
The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with {open_quotes}single carrier{close_quotes} response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities ...
1995-11-01
T=(5/2) "2"7Na from "1"4C+"1"4C, and the N=16 shell gap
International Nuclear Information System (INIS)
For the first time a comprehensive level and decay scheme has been obtained for a T=(5/2) nucleus in the s-d shell ("2"7Na) by using a radioactive beam and target. Particle-#gamma# and p-#gamma#-#gamma# coincidences were measured following the "1"4C("1"4C,p#gamma#)"2"7Na reaction at E_l_a_b=22 MeV. The results do not support an inversion of the 2s_1_/_2 and 1d_5_/_2 orbitals, as previously proposed for T_z#>=#3, but they do suggest an increased N=16 gap between the 2s_1_/_2 and 1d_3_/_2 orbitals due to the neutron excess. A consistent interpretation of the level scheme in terms of the s-d shell model using the USD Hamiltonian is possible below 4 MeV, but differences increase at higher excitation energies. Another interpretation is that the influences of both the p_1_/_2 and f_7_/_2 intruder orbitals increase simultaneously with increasing T, an effect not included in the USD Hamiltonian.
2002-05-01
Reflection-Free One-Way Edge Modes in a Gyromagnetic Photonic Crystal
We point out that electromagnetic one-way edge modes analogous to quantum Hall edge states, originally predicted by Raghu and Haldane in 2D gyroelectric photonic crystals possessing Dirac point-derived bandgaps, can appear in more general settings. In particular, we show that the TM modes in a gyromagnetic photonic crystal can be formally mapped to electronic wavefunctions in a periodic electromagnetic field, so that the only requirement for the existence of one-way edge modes is that the Chern number for all bands below a gap is non-zero. In a square-lattice gyromagnetic Yttrium-Iron-Garnet photonic crystal operating at microwave frequencies, which lacks Dirac points, time-reversal breaking is strong enough that the effect should be easily observable. For realistic material parameters, the edge modes occupy a 10% band gap. Numerical simulations of a one-way waveguide incorporating this crystal show 100% transmission across strong defects, such ...
2007-01-01
Preparation of nanostructure Ni doped CdO thin films by sol gel spin coating method
British Library Electronic Table of Contents (United Kingdom)
The nanostructure Ni-doped CdO films have been prepared by sol gel spin coating method. Atomic force microscopy results indicate that the CdO films are formed from the nanoparticles and the grain size is changed with nickel content. X-ray diffraction patterns of the films indicate that the undoped and Ni-doped CdO films have polycrystalline structure with a cubic sodium chloride structure, showing two main characteristic peaks assigned to the (111) and (200) planes. The optical band gap values of undoped and Ni-doped CdO films were determined by optical absorption method. The Eg values of the CdO films were found to be in the range of 2.26?2.60?eV. The Eg values of the CdO films increase with the content of Ni dopant (up to 6% Ni). It is evaluated that the optical band gap and grain size o...
2011-01-01
Parametric study of pipe whip analysis
Energy Technology Data Exchange (ETDEWEB)
In the Energy Balance Analysis Model (Standard Review Plan (USNRC, 1981), Section 3.6.2, ''Determination of Rupture Locations and Dynamic Effects Associated with the Postulated Rupture of Piping''), time dependence is not considered, and a constant blowdown thrust force is assumed. This force includes an amplification factor of 1.1 to account for potential effects of rebound. Many of the assumptions used in establishing the acceptance criteria, as stated in the Standard Review Plan, were based on engineering judgment and logic intended to assure upper bound design rather than on a mechanistic assessment of actual pipe rupture phenomena and their effects. As a result of the current practice an exceedingly conservative design may be introduced. This report represents a parametric study of the amplification factor to account for rebound effects in the Energy Balance Method. Of the 71 distinct cases we chose for our parametric study, the amplification ...
1987-10-01
Energy Technology Data Exchange (ETDEWEB)
The most recently developed control technologies in a hot strip mill are described. Preview AGC has been developed with a preview control synthesis. It controls roll gaps by using the previous information of disturbances. The disturbances which are concerned are derived from the rolling force, the roll gap and the thickness of a previous stand. The thickness accuracy and the availability of mill have been improved by this technology. An on-line roll grinding (ORG) system with an on-line roll profile meter (OPM) has been developed for the purpose of achieving schedule-free rolling. The ORG smooths the worn and roughed surface of a work roll and OPM can measure the profile of a revolving roll without contact. The data obtained by the OPM are given as feedback information to the ORG. As a result, grinding accuracy has been improved and rolling restriction on width has been relaxed widely. (author)
1999-12-01
In 1991, the Peacock Hill Working Group provided the field of emotional and behavioral disorders (EBD) a roadmap for improving the quality of services provided to students with EBD. The working group considered issues at every level of the educational system, from the classroom to federal policy. Although many strides have been made in the past 20 years regarding the education and treatment of students with EBD, the gap has persisted between empirically validated practices and the classroom routines of teachers serving students from this population. In the authors' view, the field of EBD would benefit greatly from conceptual and empirical developments to improve the mechanisms required to bring science to the classroom. Using the theoretical underpinnings of implementation science, the authors describe a transactional model for integrating research, policy, and practice to close the research-to-practice gap. Recommendations for researchers, ...
2010-08-01
International Nuclear Information System (INIS)
The Four years of the IMPACT, 'Integrated Modular Plant Analysis and Computing Technology', project Phase 1 have been completed. The verification study of Severe Accident Analysis Code SAMPSON prototype developed in Phase 1 was conducted in two steps. First, each analysis module was run independently and analysis results were compared and verified against separate-effect test data with good results. Second, with the Simulation Supervisory System, up to 11 analysis modules were executed concurrently in the parallel environment (currently, NUPEC uses IBM-SP2 with 72 process elements), to demonstrate the code capability and integrity. The target plant was Surry as a typical PWR and the initiation events were a 10-inch cold leg failure. The analysis is divided to two cases; one is in-vessel retention analysis when the gap cooling is effective (In-vessel scenario test), the other is analysis of phenomena event is extended to ex-vessel due to the Reactor Pressure Vessel ...
1999-07-01
International Nuclear Information System (INIS)
Ozone formation by a pulse positive corona discharge generated in the gas phase between a planar high voltage electrode made from reticulated vitreous carbon and a water surface with an immersed ground stainless steel plate electrode was investigated under various operating conditions. The effects of gas flow rate (0.5-3 litre min"-"1), discharge gap spacing (2.5-10 mm), applied input power (2-45 W) and gas composition (oxygen containing argon or nitrogen) on ozone production were determined. Ozone concentration increased with increasing power input and with increasing discharge gap. The production of ozone was significantly affected by the presence of water vapour formed through vaporization of water at the gas-liquid interface by the action of the gas phase discharge. The highest energy efficiency for ozone production was obtained using high voltage pulses of approximately 150 ns duration in Ar/O_2 mixtures with the maximum efficiency (energy ...
2005-02-07
Extracting energy from hydraulically-fractured geothermal reservoirs
The governing equations for heat and mass transfer were derived for hydraulically fractured geothermal reservoirs. When converted to nondimensional form it was shown that the equations can be considerably simplified. The resulting equations can be strongly influenced by the effects of buoyancy; the magnitude of the effect is measured by the ratio of the Grashof and Reynolds numbers, and the ratio of the actual permeability of the fracture and the square of the fracture gap width. Significant quantities of energy can be extracted from hydraulic fractures--even without thermal stress fracturing. The amount is limited by the size of the fracture and the low thermal conductivity of rock. The viscous pressure drop in open fractures is insignificant, and depending upon losses in piping and surface equipment, the entire system could be ''self-pumped'' due to buoyancy. Thermal contraction of the rock tends to increase the fracture ...
1976-01-01
Evaluation of Core Bypass Flow in the Prismatic VHTR with a Multi-block Experiment
International Nuclear Information System (INIS)
The core of Prismatic Modular Reactor (PMR) consists of assemblies of hexagonal graphite fuel and reflector elements. The core bypass flow of Very High Temperature Reactor (VHTR) is defined as the core flow that does not pass through the coolant channels but passes through the bypass gap between fuel elements. The increase in bypass flow makes the decrease in effective coolant flow. Since the core bypass flow has a negative impact on safety and efficiency of VHTR, core bypass phenomena have to be investigated to improve the core thermal margin of VHTR. For this purpose, the international project, I-NERI project, has been carried out since 2008. I-NERI project is collaborative project that KAERI and SNU of Korea side and INL, ANL and TAMU of U.S side are involved. In order to evaluate the core bypass flow, the multicolumn and multi-layer experimental facility is designed by SNU. In this experiment, the effect of cross-flow and local variation of bypass ...
2010-10-01
Entropy, confinement, and chiral symmetry breaking
This paper studies the way in which confinement leads to chiral symmetry breaking (CSB) through a gap equation. We argue that entropic effects cut off infrared singularities in the standard confining effective propagator $1/p^4$, which should be replaced by $1/(p^2+m^2)^2$ for a finite mass $m\\sim K_F/M(0)$ [$M(0)$ is the zero-momentum value of the running quark mass]. Extension of an old calculation of the author yields a specific estimate for $m$. This cutoff propagator shows semi-quantitatively two critical properties of confinement: 1) a negative contribution to the confining potential coming from entropic forces; 2) an infrared cutoff required by gauge invariance and CSB itself. Entropic effects lead to a proliferation of pion branches and a $\\bar{q}q$ condensate, and contribute a negative term $\\sim -K_F/M(0)$ to the effective pion Hamiltonian allowing for a massless pion in the presence of positive kinetic energy and string energy. The resulting ...
2010-01-01
International Nuclear Information System (INIS)
Energy band diagrams of LaCuOCh (Ch = S, Se and Te) were calculated by a full-potential linearized augmented plane-wave method. The calculations, based on the local density approximation with/without an on-site Coulomb repulsion parameter, were to examine the energy levels of La 4f states. The results of the calculations showed that the on-site correlation parameter is necessary for evaluating the energy levels of La 4f states appropriately. The calculations for LaCuOCh with the on-site correlation parameter revealed that LaCuOS and LaCuOSe have almost the same energy band structure with a direct allowed-type band gap, while LaCuOTe has significantly different conduction band structure that exhibits an indirect-type band gap. This difference in electronic structure between LaCuOCh (Ch = S, Se and Te) is consistent with the observed optical properties of these materials.
2004-07-21
Band-edge solitons, Nonlinear Schrodinger / Gross-Pitaevskii Equations and Effective Media
We consider a class of nonlinear Schrodinger / Gross-Pitaevskii (NLS/GP) equations with periodic potentials, having an even symmetry. We construct "solitons", centered about any point of symmetry of the potential. For focusing (attractive) nonlinearities, these solutions bifurcate from the zero state at the lowest band edge frequency, into the semi-infinite spectral gap. Our results extend to bifurcations into finite spectral gaps, for focusing or defocusing (repulsive) nonlinearities under more restrictive hypotheses. Soliton nonlinear bound states with frequencies near a band edge are well-approximated by a slowly decaying solution of a homogenized NLS/GP equation, with constant homogenized effective mass tensor and effective nonlinear coupling coefficient, modulated by a Bloch state. For the critical NLS equation with a periodic potential, e.g. the cubic two dimensional NLS/GP with a periodic potential, our results imply that the limiting ...
2010-01-01
International Nuclear Information System (INIS)
The applicability of the thermal response of an electrically heated simulated rod mostly used in loss-of-coolant-accident (LOCA) experiments to that of a nuclear fuel rod is a concern for the safety evaluation of a reactor. The present analysis describes the characteristics of the thermal response for both electrically heated and nuclear fuel rods during typical reflood conditions for a PWR-LOCA. A model describing the radial temperature field in the rod is developed based on the scheme in HETRAP code by Malang and incorporated into a reflood analysis code, REFLA for that purpose. The calculations applied to the existing reflood tests gave good agreement with experiments, showing the validity of the present model. The analysis has shown that the nuclear fuel rod tends to give a lower clad temperature and a sooner quench time than the electrically heated rod in a typical reflood condition, due to the smaller gap heat transfer and smaller heat capacity of the ...
Acoustic metamaterials for sound focusing and confinement
Energy Technology Data Exchange (ETDEWEB)
We give a theoretical design for a locally resonant two-dimensional cylindrical structure involving a pair of C-shaped voids in an elastic medium which we term as double 'C' resonators (DCRs) and imbedded thin stiff bars, that displays the negative refraction effect in the low frequency regime. DCRs are responsible for a low frequency band gap which hybridizes with a tiny gap associated with the presence of the thin bars. Using an asymptotic analysis, typical working frequencies are given in closed form: DCRs behave as Helmholtz resonators modeled by masses connected to clamped walls by springs on either side, while thin bars behave as a periodic bi-atomic chain of masses connected by springs. The discrete models give an accurate description of the location and width of the stop band in the case of the DCR and the first two dispersion bands for the periodic thin bars. We then combine our asymptotic formulae for arrays of DCR ...
2007-11-15
Acoustic metamaterials for sound focusing and confinement
International Nuclear Information System (INIS)
We give a theoretical design for a locally resonant two-dimensional cylindrical structure involving a pair of C-shaped voids in an elastic medium which we term as double 'C' resonators (DCRs) and imbedded thin stiff bars, that displays the negative refraction effect in the low frequency regime. DCRs are responsible for a low frequency band gap which hybridizes with a tiny gap associated with the presence of the thin bars. Using an asymptotic analysis, typical working frequencies are given in closed form: DCRs behave as Helmholtz resonators modeled by masses connected to clamped walls by springs on either side, while thin bars behave as a periodic bi-atomic chain of masses connected by springs. The discrete models give an accurate description of the location and width of the stop band in the case of the DCR and the first two dispersion bands for the periodic thin bars. We then combine our asymptotic formulae for arrays of DCR and thin-bars to ...
2007-11-01
Theoretical investigation of the behavior of an acoustic metamaterial with extreme Young's modulus
British Library Electronic Table of Contents (United Kingdom)
A mechanical model with local resonators is proposed as an acoustic metamaterial that exhibits an unusual frequency-dependent effective stiffness. If treated as an equivalent elastic solid, its effective Young's modulus can become unbounded or vanishingly small at two respective frequencies. Moreover, in a certain frequency range, the effective Young's modulus would become negative, resulting in a band gap that coincides with this frequency range. The wave attenuation behavior and mechanism are studied through numerical simulations on the acoustic metamaterial model. The capability of the metamaterial to selectively block or filter unwanted waves is demonstrated by a numerical simulation example.
2011-01-01
The crack of harden cement paste observed with multi-technique
British Library Electronic Table of Contents (United Kingdom)
The shrinkage of the cement paste with low water-cement ratio at different relative humidity was observed and analyzed with ESEM and deformation map technique. The crack morphology was observed with different magnification with SEM and FESEM, and the formation of the crack was observed with AFM between two C-S-H nano particles. The observation by multi technique at multi scale indicated that the shrinkage was increase with the decrease of the humidity due to the increase of the pressure of the capillary pressure, the morphology of the crack in smaller scale was similar to that in the bigger scale, the smaller crack distributed in the latticework of the bigger ones, and the crack propagated along the gap between two nano particles of C-S-H with weaker bonding.
2010-01-01
The behavior of bonded doubler splices for composite sandwich panels
The results of an investigation into the behavior of adhesively bonded doubler splices of two composite material sandwich panels are presented. The splices are studied from three approaches: analytical; numerical (finite elements); and experimental. Several parameters that characterize the splice are developed to determine their influence upon joint strength. These parameters are: doubler overlap length; core stiffness; laminate bending stiffness; the size of the gap between the spliced sandwich panels; and room and elevated temperatures. Similarities and contrasts between these splices and the physically similar single and double lap joints are discussed. The results of this investigation suggest several possible approaches to improving the strength of the sandwich splices.
1980-07-01
Technology development tendency and R and D idea of NPP radiation monitoring system
International Nuclear Information System (INIS)
This paper gives a general description of functions, usages and system configurations of the instruments and their major units or components of the radiation monitoring system, as well as the status and technical gap between domestic and foreign technologies. And then the paper also puts forward an idea on product R and D, i.e. combination of independent R and D and innovation, assimilation and re-innovation of foreign advanced technology at present situation in order to keep pace with the rapid development of nuclear power in China and achieve the goal of localization of nuclear power equipment. (authors)
2009-06-01
Target identification of buried coated objects
Scientific Electronic Library Online (English)
Abstract in english We consider the three dimensional electromagnetic inverse scattering problem of determining information about a buried coated object from a knowledge of the electric and magnetic fields measured on the surface of the earth corresponding to time harmonic electric dipoles as incident fields. We assume that the buried object is a perfect conductor that is (possibly) partially coated by a thin dielectric layer. No a priori assumption is made on the extent of the coating, i.e. (more) the object can be fully coated, partially coated or not coated at all. We present an algorithm based on the linear sampling method and reciprocity gap functional for reconstructing the shape of the scattering obstacle together with an estimate of the surface impedance of the coating.
2006-01-01
We numerically demonstrate selective near-field localization determined by the polarization state of a single emitter coupled to plasmonic nano-cluster. Seven gold nanospheres are carefully arranged such that up to ten polarization states of the single emitter, including linear, circular, and elliptical polarizations, can be distinguished via the distinct field localization in four gaps. The ability to transform polarization state into field spatial localization may find application for single emitter polarization analysis.
2011-01-01
Static potential of open bosonic membranes
Energy Technology Data Exchange (ETDEWEB)
We study the static potential of open bosonic membranes in the 1/d approximation, where d is the space-time dimensionality. For a fixed square boundary of side length R we find, in contrast to the string potential, no critical distance below which tachyons appear. Instead, we find a correction factor to the classical potential, V/sub cl/=kR/sup 2/, which for small distances shifts the perturbative ground state energy by a positive constant. We interpret the shift as the mass gap of this quantum membrane.
1989-03-30
Spontaneous radiation and lamb shift in three-dimensional photonic crystals
Spontaneous emission in photonic crystals with anisotropic three-dimensional dispersion relation is studied. If the upper level is below a characteristic frequency omega(1), or above omega(2), or between omega(1) and omega(2), the radiation is a localized field with a frequency in the band gap, or a propagating field with a frquency in the band, or a diffusion field, respectively. An analytical expression for the Lamb shift is obtained. The Lamb shift for the current case is small compared to that in an ordinary vacuum or in one- or two-dimensional photonic crystals due to lower density of states. PMID:11017227
2000-03-01
Energy Technology Data Exchange (ETDEWEB)
A weak shift of the isotope concentration ratio Li{sup 6}/Li{sup 7} was measured in the coexisting phases of the miscibility gap of lithium-ammonia solutions. Li{sup 6} is slightly enriched in the concentrated metallic phase (enrichment factor {alpha} = 1.009 {+-} 0.002). This effect can be enhanced in a counter-current column to yield any desired enrichment of the two isotopes. The counter current system and its operation were tested succesfully with a sodium-potassium-ammonia solution.
1991-12-01
Regenerative zinc/air and zinc/ferricyanide batteries for stationary power applications
Energy Technology Data Exchange (ETDEWEB)
The authors report a novel configuration for a zinc-particle, packed-bed anode in which an open structure of high hydraulic permeability is maintained indefinitely in a cell with closely spaced walls by the formation of particle bridges and associated gaps. The configuration minimizes electrolyte pumping costs, allows rapid refueling and partial recharge, and provides for 100% zinc consumption. This approach benefits zinc/air fuel batteries by allowing nearly continuous operation and fuel recycle without commercial infrastructure; it benefits Zn/[Fe(CN){sub 6}]{sup {minus}3} batteries by eliminating shape-change and polarization problems found with planar anodes.
1994-05-01
International Nuclear Information System (INIS)
The read/write characteristics for perpendicular magnetic recording media of focused-ion-beam (FIB)-etched recording heads were investigated. It was found that the trailing edge of an FIB-etched head produces a higher gradient in the magnetic field perpendicular to the medium than a head which has not been etched. The signal-to-noise ratio of the medium increased with the FIB-etched write gap. A high-Bs and thin pole increased the magnetic field's gradient in the perpendicular direction, resulting in excellent read/write characteristics.
2001-10-01
International Nuclear Information System (INIS)
The exchange of information and experience among Member Sates is an essential component of the IAEA action plan for addressing the Year 2000 problem. The objective is to enable Member States to identify any gaps in their own conversion programmes, benefit form the experience of others in developing remedial actions and establish the basis for future action to solve remaining problems. Experts in Year 2000 issues particularly those related to digital equipment prepared this report dealing with nuclear fuel cycle facilities
1993-04-18
Mode theory of the plasma cladding waveguide
International Nuclear Information System (INIS)
The plasma cladding waveguide, which is a cylindrical dielectric core surrounded by a plasma cladding, is developed, and the guided modes and their characteristics of this waveguide are displayed through the present detailed theoretical research. The conditions of the single mode existing in the plasma cladding waveguide have been given, and the defined forbidden gap of frequency is discussed. It is found that the usage characteristics of the plasma cladding waveguide vary strongly with plasma frequency, and changing the plasma parameters can control the propagation mode. This paper focuses on exhibiting the basic characteristics and the potential applications of this new type of waveguide.
2007-04-07
Measurement of AlP/GaP (001) heterojunction band offsets by x-ray photoemission spectroscopy
Energy Technology Data Exchange (ETDEWEB)
X-ray photoemission spectroscopy has been used to measure the valence band offset {Delta}E{sub v} for the AlP/GaP (001) heterojunction interface. The heterojunction samples were prepared by molecular-beam epitaxy. A value of {triangle}E{sub v}=0.43 eV is obtained (staggered band alignment, with AlP valence band below that of GaP). 24 refs., 8 figs., 1 tab.
1993-07-01
Magnetic and transport properties of Pr_2Pd_3Si_5
International Nuclear Information System (INIS)
The results obtained from the magnetization, specific heat and electrical resistivity measurements on a polycrystalline sample of Pr_2Pd_3Si_5 are reported. The temperature dependence of magnetic susceptibility at low field (0.01 T) exhibits pronounced anomaly below 7 K due to antiferromagnetic ordering. The electrical resistivity and specific heat data also exhibit sharp transition at 6.6 K evidencing the onset of antiferromagnetic order. A fit to the electrical resistivity data below 6 K suggests the presence of an energy gap in magnon spectrum in the ordered state. (author)
2008-12-16
Local Heine-Abarenkov model potential for III-V and II-VI covalent compounds
Energy Technology Data Exchange (ETDEWEB)
A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.
1983-10-01
Loaded Transducer Fpr Downhole Drilling Component
Energy Technology Data Exchange (ETDEWEB)
A robust transmission element for transmitting information between downhole tools, such as sections of drill pipe, in the presence of hostile environmental conditions, such as heat, dirt, rocks, mud, fluids, lubricants, and the like. The transmission element maintains reliable connectivity between transmission elements, thereby providing an uninterrupted flow of information between drill string components. A transmission element is mounted within a recess proximate a mating surface of a downhole drilling component, such as a section of drill pipe. To close gaps present between transmission elements, transmission elements may be biased with a "spring force," urging them closer together.
2005-07-05
Idaho National Laboratory 2013-2022 Ten-Year Site Plan
Energy Technology Data Exchange (ETDEWEB)
The Idaho National Laboratory (INL) Ten-Year Site Plan (TYSP) describes the strategy for accomplishing the long-term objective of transforming the laboratory to meet Department of Energy (DOE) national nuclear research and development (R&D) goals, as outlined in DOE strategic plans. The plan links R&D mission goals and INL core capabilities with infrastructure requirements (single- and multi-program), establishs the 10-year end-state vision for INL complexes, and identifies and prioritizes infrastructure needs and capability gaps. The TYSP serves as the basis for documenting and justifying infrastructure investments proposed as part of the FY 2013 budget formulation process.
2011-06-01
International Nuclear Information System (INIS)
A theoretical study of structural and electronic properties of GeC, SnC and GeSn is presented using the full potential linearized augmented plane wave method. In this approach, the generalized gradient approximation was used for the exchange-correlation potential. Results are given for lattice constant, bulk modulus and its pressure derivative in both zinc-blende and rocksalt structures. Band structure, density of states and band gap pressure coefficients in zinc-blende structure are also given. The results are compared with previous calculations and with experimental measurements.
2003-08-01
Forward contracts in electricity markets: The Australian experience
International Nuclear Information System (INIS)
Forward contracts play a vital role in all electricity markets, and yet the details of the market for forward contracts are often opaque. In this paper we review the existing literature on forward contracts and explore the contracting process as it operates in Australia. The paper is based on interviews with participants in Australia's National Electricity Market (NEM). The interviews were designed to understand the contracting process and the practice of risk management in the Australian energy-only pool market. This survey reveals some significant gaps between the assumptions made in the academic literature and actual practice in the Australian market place. (author)
2007-05-01
Energy Technology Data Exchange (ETDEWEB)
In this paper, we review some of the work our group has done in the past few years to obtain the electron self-energy of high temperature superconductors by analysis of angle-resolved photoemission data. We focus on three examples which have revealed: (1) a d-wave superconducting gap, (2) a collective mode in the superconducting state, and (3) pairing correlations in the pseudogap phase. In each case, although a novel result is obtained which captures the essence of the data, the conventional physics used leads to an incomplete picture. This indicates that new physics needs to be developed to obtain a proper understanding of these materials.
1997-12-05
Effects of the variation of fundamental constants on Pop III stellar evolution
International Nuclear Information System (INIS)
The effect of variations of the fundamental constants on the thermonuclear rate of the triple alpha reaction, "4He(#alpha##alpha#, #gamma#)"1"2C, that bridges the gap between "4He and "1"2C is investigated. We have followed the evolution of 15 and 60 M#centre dot# zero metallicity stellar models, up to the end of core helium burning. They are assumed to be representative of the first (Population III) stars. The calculated oxygen carbon abundances resulting from helium burning can then be used to constrain the variation of the fundamental constants.
2010-08-12
Energy Technology Data Exchange (ETDEWEB)
The author shows in this paper an interesting relation between elementary and topological excitations in the antiferromagnetic and d-wave superconducting phases of the t-J model at two dimensions. The topological spin and charge excitations in one phase have the same dynamics as elementary excitations in the other phase, except the appearance of energy gaps. Moreover, the transition from one phase to another can be described as a quantum disordering transition associated with the topological excitations. Based on the above picture, a plausible phase diagram of t-J model is constructed.
2000-02-10
Downstream natural gas in Europe-High hopes dashed for upstream oil and gas companies
International Nuclear Information System (INIS)
Access for independents to retail gas markets was a central concern in European policy reform efforts in the 1990s. Upstream oil and gas companies reacted with strategic intentions of forward integration. By late 2004, forward integration was still weak, however. An important explanation of the gap between announced strategic re-orientation and actual strategy implementation lies in the political failure of EU member states to dismantle market barriers to entry for independents. Variations between companies in downstream strategy implementation are explained by variations in business opportunities and internal company factors.
2007-01-01
Design of a 2 T multipole wiggler insertion device for the SRS
International Nuclear Information System (INIS)
Two new identical insertion devices have been designed for the Daresbury SRS. They are 2T permanent-magnet multipole wigglers that will provide high flux in the X-ray region. This paper describes the magnetic and mechanical design of the arrays of steel pole pieces and permanent-magnet blocks. Also given is the engineering design of the support structure that will cope with the very large forces present while maintaining high levels of precision in gap setting and parallelism. The engineering design has been fully assessed using finite-element techniques to predict the deflections of critical parts of the structure. These two devices are due to be installed into the SRS by the end of 1998.
1998-05-01
CRC handbook of nuclear reactors calculations. Vol. III
International Nuclear Information System (INIS)
This handbook breaks down the complex field of nuclear reactor calculations into major steps. Each step presents a detailed analysis of the problems to be solved, the parameters involved, and the elaborate computer programs developed to perform the calculations. This book bridges the gap between nuclear reactor theory and the implementation of that theory, including the problems to be encountered and the level of confidence that should be given to the methods described. Volume III: Control Rods and Burnable Absorber Calculations. Perturbation Theory for Nuclear Reactor Analysis. Thermal Reactors Calculations. Fast Reactor Calculations. Seed-Blanket Reactors. Index.
CRC handbook of nuclear reactors calculations. Vol. II
International Nuclear Information System (INIS)
This handbook breaks down the complex field of nuclear reactor calculations into major steps. Each step presents a detailed analysis of the problems to be solved, the parameters involved, and the elaborate computer programs developed to perform the calculations. This book bridges the gap between nuclear reactor theory and the implementation of that theory, including the problems to be encountered and the level of confidence that should be given to the methods described. Volume II: Monte Carlo Calculations for Nuclear Reactors. In-Core Management of Four Reactor Types. In-Core Management in CANDU-PHW Reactors. Reactor Dynamics. The Theory of Neutron Leakage in Reactor Lattices. Index.
An analysis of a firm?s capacity in Mazda?s Keiretsu
British Library Electronic Table of Contents (United Kingdom)
Capacity is defined as the power resulting from the specific position of a company in a network organization. This article extends the theory of network organizations to examine Mazda?s Yokokai Keiretsu, and proposes a new approach to calculating a firm?s capacity in a network. Capacity is divided into two categories, take-in capacity and take-out capacity, and the gap between them is called the capacity difference. We analyze the impact of capacity difference as a determinant of corporate performance in network organizations, thus providing a new perspective for successful corporate management.
2011-01-01
A study on the relation between linguistics-oriented and domain-specific semantics
In this paper we dealt with the comparison and linking between lexical resources with domain knowledge provided by ontologies. It is one of the issues for the combination of the Semantic Web Ontologies and Text Mining. We investigated the relations between the linguistics oriented and domain-specific semantics, by associating the GO biological process concepts to the FrameNet semantic frames. The result shows the gaps between the linguistics-oriented and domain-specific semantics on the classification of events and the grouping of target words. The result provides valuable information for the improvement of domain ontologies supporting for text mining systems. And also, it will result in benefits to language understanding technology.
2010-01-01
A T-2 translational research perspective on interventions to improve post-fracture osteoporosis care
British Library Electronic Table of Contents (United Kingdom)
The objectives of this paper are to: quickly outline the extent of the care gap in osteoporosis; define T-2 (knowledge) translation and its relationship to quality improvement; discuss the barriers to best practice in osteoporosis care after a fracture; convey the importance of rigor in design and evaluation of translational interventions by drawing upon examples from the broader literature; describe in some detail a series of post-fracture intervention trials conducted in Alberta, Canada; and make some conclusions specifically about osteoporosis interventions and more generally about T-2 translational research.
2011-01-01
Energy Technology Data Exchange (ETDEWEB)
Plasma arc welding processes are used in off-shore industry for construction and maintenance in the wet surrounding of underwater structures and pipelines. In greater water depth the density of the plasma gas increase because of the greater hydrostatic pressure. This causes the increase of conductive heat losses to the wet surrounding. To keep up the energy flux to the workpiece to be welded, the plasma arc has to burn in a local dry area with an inside pressure of 1 bar. This requirement can be fulfilled by a rotating cylinder with a liquid film flowing down the inner wall. The flow around the rotating cylinder to create a local dry area around the plasma arc under water is experimentally investigated. The rotating cylinder is placed above the work surface which is simulated by a flat plate. According to the centrifugal forces of the rotating flow inside the gap between the lower end of the cylinder and the flat plate the water is forced out of the cylinder. The ...
1994-12-31
Thermal wet oxidation of GaP and Al{sub 0.4}Ga{sub 0.6}P
Thermal wet oxidations of GaP and Al{sub 0.4}Ga{sub 0.6}P at 650 degree sign C for various times have been performed. Comparisons are made on oxidation rates and post oxidation morphology. Transmission electron microscopy shows that when oxidizing GaP, polycrystalline monoclinic GaPO{sub 4}{center_dot}2H{sub 2}O forms without noticeable loss of phosphorus. Oxidation for 6 h or more leads to poor morphology resulting in cracks and detachment. A thickness expansion of about 2.5-3 times is noticed as a result of oxidation. In contrast, oxidized Al{sub 0.4}Ga{sub 0.6}P exhibits much better morphology without cracks or detachment from the substrate. The oxide has an almost amorphous-like microstructure. The oxidation process shows typical diffusion-limited reaction at long anneals. Preliminary work on the oxidation of AlP indicates that the reaction leads to formation of Al{sub 2}O{sub 3} and possible volatile P{sub 2}O{sub 5} diffusing out of the ...
2000-08-21
This report summarizes the results of an expert-opinion elicitation activity designed to qualitatively assess the status and capabilities of currently available computer codes and models for accident analysis and reactor safety calculations of advanced sodium fast reactors, and identify important gaps. The twelve-member panel consisted of representatives from five U.S. National Laboratories (SNL, ANL, INL, ORNL, and BNL), the University of Wisconsin, the KAERI, the JAEA, and the CEA. The major portion of this elicitation activity occurred during a two-day meeting held on Aug. 10-11, 2010 at Argonne National Laboratory. There were two primary objectives of this work: (1) Identify computer codes currently available for SFR accident analysis and reactor safety calculations; and (2) Assess the status and capability of current US computer codes to adequately model the required accident scenarios and associated phenomena, and identify important gaps. ...
2011-06-01
Electronic and structural properties of #beta#-Be_3N_2
International Nuclear Information System (INIS)
We report the results of a theoretical study of the electronic and structural properties of the hexagonal beryllium nitride, using first principle pseudopotential plane wave (PP-PW) as well as full potential linearized augmented plane wave (FP-LAPW) methods within density functional theory. In the case of PP-PW we generated the pseudopotential by the highly optimized Q_c-tuning method and used the local density approximation and generalized gradient approximation (GGA) for the exchange-correlation potential. We applied pressure on the unit cell by the Wentzcovitch and traditional methods. In the FP-LAPW approach only the GGA was used for the exchange-correlation potential. Our calculated values for structural properties, based on both approaches are in reasonable agreement with experimental and other theoretical (Hartree Fock) results. By applying the above two approaches and also the Tight Binding Linear Muffin Thin Orbital method, the ground state Kohn-Sham eigenvalues were ...
Computational fluid dynamic analysis of core bypass flow phenomena in a prismatic VHTR
International Nuclear Information System (INIS)
The core bypass flow in a prismatic very high temperature reactor (VHTR) is an important design consideration and can have considerable impact on the condition of reactor core internals including fuels. The interstitial gaps are an inherent presence in the reactor core because of tolerances in manufacturing the blocks and the inexact nature of their installation. Furthermore, the geometry of the graphite blocks changes over the lifetime of the reactor because of thermal expansion and irradiation damage. The occurrence of hot spots in the core and lower plenum and hot streaking in the lower plenum (regions of very hot gas flow) are affected by bypass flow. In the present study, three-dimensional computational fluid dynamic (CFD) calculations of a typical prismatic VHTR are conducted to better understand bypass flow phenomena and establish an evaluation method for the reactor core using the commercial CFD code FLUENT. Parametric calculations changing several factors ...
2010-09-01
Computational Fluid Dynamic Analysis of Core Bypass Flow Phenomena in a Prismatic VHTR
Energy Technology Data Exchange (ETDEWEB)
The core bypass flow in a prismatic very high temperature gas-cooled reactor (VHTR) is one of the important design considerations which impacts considerably on the integrity of reactor core internals including operating fuels. The interstitial gaps are an inherent presence in the reactor core because of tolerances in manufacturing the blocks and the inexact nature of their installation. Furthermore, the geometry of the graphite blocks changes over the lifetime of the reactor because of thermal expansion and irradiation damage. The occurrence of hot spots in the core and lower plenum and hot streaking in the lower plenum (regions of very hot gas flow) will be affected by the bypass flow. In the present study, three-dimensional computational fluid dynamic (CFD) calculations of a typical prismatic VHTR are conducted to understand better the bypass flow phenomenon and establish the evaluation method in the reactor core using commercial CFD code FLUENT. Parametric ...
2010-09-01
Energy Technology Data Exchange (ETDEWEB)
Threat characterization is a key component in evaluating the threat faced by control systems. Without a thorough understanding of the threat faced by critical infrastructure networks, adequate resources cannot be allocated or directed effectively to the defense of these systems. Traditional methods of threat analysis focus on identifying the capabilities and motivations of a specific attacker, assessing the value the adversary would place on targeted systems, and deploying defenses according to the threat posed by the potential adversary. Too many effective exploits and tools exist and are easily accessible to anyone with access to an Internet connection, minimal technical skills, and a significantly reduced motivational threshold to be able to narrow the field of potential adversaries effectively. Understanding how hackers evaluate new IT security research and incorporate significant new ideas into their own tools provides a means of anticipating how IT systems are most likely to be ...
2005-06-01
Ab initio calculations of the electronic structure of the silver palladium oxide Ag_2PdO_2
International Nuclear Information System (INIS)
Ab initio calculations of the electronic structure were performed for the silver palladium oxide, Ag_2PdO_2, by the full potential mixed linearized augmented plane wave and augmented plane wave plus local orbitals method (mixed LAPW/APW+lo) within the density functional theory and using the generalized gradient approximation (GGA96, Phys. Rev. Lett. 77 (1996) 3865) for the exchange-correlation potential. The lattice parameters were calculated from the ground-state total energy versus volume curve, and are in good agreement with the available experimental results. Our calculations of band structure predicted that the compound Ag_2PdO_2 has indirect band gap, and the Pd 4d states strongly hybridize with the O 2p states all over the valence bands and conduction bands. The valence bands are composed mainly of Ag, Pd 4d states and O 2p states, while the conduction bands consist mainly of the Pd 4d states and O 2p states. In addition, focusing on the calculation ...
2003-09-01
Energy Technology Data Exchange (ETDEWEB)
The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the transient-enhanced diffusion of dopants in the creation of ultra-shallow junctions, a vital step in the further miniaturization of device structures, positron beams have played a pivotal role in providing an insight into the mechanisms underlying this phenomenon, being able to detect FV complexes in implanted and annealed samples. Secondary Ion Mass Spectrometry has provided complementary information on fluorine concentrations so that the nature of the F{sub m}V{sub n} complexes can be further assessed. New results on Si and SiGe structures are presented.
2008-10-31
Ultraviolet detectors based on ZnO films by thermal oxidation of Zn metallic films
British Library Electronic Table of Contents (United Kingdom)
Metallic Zn films were deposited on glass substrates by electron-beam evaporation. ZnO films were synthesized by thermal oxidation of Zn metallic films in air. At the annealing temperature of 550 ?C, ZnO nanowires appeared on the surface, which mainly result from the decrease of oxidation rate. A ZnO ultraviolet photodetector was fabricated based on a metal-semiconductor-metal planar structure. The detector showed a large UV photoresponse with an increase of two orders of magnitude. It is concluded that promising UV detectors can be obtained on ZnO films by thermal oxidation of Zn metallic films. The ways of performing spectral response measurements for polycrystalline ZnO films are also discussed.
2008-01-01
Transport properties of single-crystalline n-type semiconducting PbTe nanowires
International Nuclear Information System (INIS)
Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. They consisted of rock-salt structure PbTe nanocrystals uniformly grown in the [100] direction. We fabricated field-effect transistors using a single PbTe nanowire, providing evidence for its intrinsic n-type semiconductor characteristics. The values of the carrier mobility and concentration were estimated to be 0.83 cm"2 V"-"1 s"-"1 and 8.8 x 10"1"7 cm"-"3, respectively. The Seebeck coefficients (-72 ?V K"-"1) of individual nanowires were measured to show their n-type carrier-dominated thermoelectric transport properties.
2009-10-14
British Library Electronic Table of Contents (United Kingdom)
Two analytical methods were proposed in this research, coupled electro-thermal finite element (FE) analysis and thermal-mechanical FE analysis, to analyze the mechanical behavior of bonding wire of power module under cyclic power loads, and the International Electrotechnical Commission standard is adopted in conducting a power cycling test. The exterior temperature distribution was measured by an infrared thermometer. Moreover, the junction temperature is calculated from the given thermal impedance of the semiconductor chip, chip power loss, and case temperature. Subsequently, the simulated temperature distribution via electro-thermal FE analysis is compared with experimental results to validate the methodology used in the aforementioned analysis. The analysis shows compressive stress at t...
2011-01-01
Thermal noise as a spectroscopic tool to determine transport properties
British Library Electronic Table of Contents (United Kingdom)
The utilization of thermal fluctuations or Johnson/Nyquist noise as a spectroscopic method to determine transport properties in conductors or semiconductors is developed. The autocorrelation function is obtained from power spectral density measurements thus enabling electronic transport property calculation through the Green-Kubo formalism. This experimental approach is distinct from traditional numerical methods such as molecular dynamics simulations, which have been used to extract the autocorrelation function and directly related physics only. This work reports multi-transport property measurements consisting of the electronic relaxation time, resistivity, mobility, diffusion coefficient, electronic contribution to thermal conductivity and Lorenz number from experimental data. Double va...
2009-01-01
Cadmium telluride single crystals were grown heavily doped with chloride by the THM method. The resulting crystals were n-type with free carrier concentrations of the order of 10('12)/cm at room temperature. Hall effect studies revealed room temperature mobilities between 30 and 350 cm('2)/v-sec and resistivites between 2 x 10('3) and 10('4) ohm-cm. Studies were made of the gamma and alpha counting characteristics of these crystals with metal, metal-semiconductor, and metal-insulator electrodes. It was found that the MIS and MSS structures resulted in significant improvement over the MS structures in counting, signal-to-noise and energy resolution.
1985-01-01
Synchrotron SAXS Studies of Nanostructured Materials and Colloidal Solutions: A Review
Scientific Electronic Library Online (English)
Abstract in english Structural characterisations using the SAXS technique in a number of nanoheterogeneous materials and liquid solutions are reviewed. The studied systems are protein (lysozyme)/water solutions, colloidal ZnO particles/water sols, nanoporous NiO-based xerogels, hybrid organic-inorganic siloxane-PEG and PPG nanocomposites and PbTe semiconductor nanocrystals embedded in a glass matrix. These investigations also focus on the transformations of time-varying structures and on str (more) uctural changes related to variations in temperature and composition. The reviewed investigations aim at explaining the unusual and often interesting properties of nanostructured materials and solutions. Most of the reported studies were carried out using the SAXS beamline at the National Synchrotron Light Laboratory (LNLS), Campinas, Brazil.
2002-03-01
Study of point defect detectors in Si
International Nuclear Information System (INIS)
The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well
1999-05-01
Spin injection in quantum wells with spatially dependent rashba interaction
Energy Technology Data Exchange (ETDEWEB)
We consider Rashba spin-orbit effects on spin transport driven by an electric field in semiconductor quantum wells. We derive spin diffusion equations that are valid when the mean free path and the Rashba spin-orbit interaction vary on length scales larger than the mean free path in the weak spin-orbit coupling limit. From these general diffusion equations, we derive boundary conditions between regions of different spin-orbit couplings. We show that spin injection is feasible when the electric field is perpendicular to the boundary between two regions. When the electric field is parallel to the boundary, spin injection only occurs when the mean free path changes within the boundary, in agreement with the recent work by Tserkovnyak et al (Preprint cond-mat/0610190)
2007-09-15
International Nuclear Information System (INIS)
Reactions of reducing species from acetonitrile media with silver iodide particles (#approx#25-angstrom diameter) have been investigated by pulse radiolysis techniques. Injection of electrons into these ultrasmall particles leads to transient bleaching of the adsorption of AgI at wavelengths close to the onset of absorption (#approx#400 nm) with the concomitant reduction of AgI to metallic silver. The reduction of Ag"+ ions and formation of silver atoms and/or dimeric Ag_2 molecules on three different size AgI particles (#approx#100, 35, and #approx#25 angstrom) have also been examined by picosecond laser spectroscopy.
Real-time neutron monitoring method using an imaging plate
Energy Technology Data Exchange (ETDEWEB)
A novel system for real-time radiation monitoring in reactor or accelerator facilities has been studied using an imaging plate. The authors made a feasibility study on a new neutron detection system using both photostimulated luminescence (PSL) and prompt luminescence (PL) generated in a neutron imaging plate (NIP) when the NIP is irradiated by neutrons. A readout system consisting of a semiconductor laser and a photomultiplier tube was fabricated for the purpose. It was confirmed that the system can measure both PSL and PL, where Am-Li was used as a neutron source. It may be possible to establish a new wide-range neutron monitoring system using the developed system as a PL mode normally, and as a PSL mode in case of intense neutron dose that cannot be measured in a PL mode because of saturation of the detection system. (author)
1999-07-01
Real-time neutron monitoring method using an imaging plate
International Nuclear Information System (INIS)
A novel system for real-time radiation monitoring in reactor or accelerator facilities has been studied using an imaging plate. The authors made a feasibility study on a new neutron detection system using both photostimulated luminescence (PSL) and prompt luminescence (PL) generated in a neutron imaging plate (NIP) when the NIP is irradiated by neutrons. A readout system consisting of a semiconductor laser and a photomultiplier tube was fabricated for the purpose. It was confirmed that the system can measure both PSL and PL, where Am-Li was used as a neutron source. It may be possible to establish a new wide-range neutron monitoring system using the developed system as a PL mode normally, and as a PSL mode in case of intense neutron dose that cannot be measured in a PL mode because of saturation of the detection system. (author)
1999-04-19
Range-resolved gas concentration measurements using tunable semiconductor lasers
British Library Electronic Table of Contents (United Kingdom)
A method for range-resolved gas sensing using path-integrated optical systems is presented. The method involves dividing an absorption path into several measurement segments and extracting the gas concentration in each segment from two path-integrated measurements. We implemented the method with tunable lasers (a 1389-nm VCSEL and a 10.9-?m pulsed quantum cascade laser) and a group of retro reflectors (RRs) distributed along absorption paths. Using a rotating mirror with the VCSEL configuration, we could scan a group of seven tape RRs spaced by 10?cm in ??9?ms to extract an H2O concentration profile. Reduced H2O concentrations were recorded in the segments purged with dry air. Hollow corner cube RRs were used in the quantum cascade laser configuration at distances up to 1.1?km from the las...
2008-01-01
Energy Technology Data Exchange (ETDEWEB)
Pilot-plant irradiation began in Hungary in 1969 with the construction of a high-activity multi-purpose /sup 60/Co facility. Technologies for radiation sterilization, food handling, plastics irradiation as well as chemical dosimetry, semiconductor instrumental dosimetry, computer-based construction and control methods have been developed. Our chlorobenzene dose-meter system is used in Hungary and abroad; as a result of an IAEA-organized dosimetric intercomparison the system was adopted as a reference system. The institute has developed into a basic institute for the reconstruction and re-load of old ..gamma..-facilities as well as it serves for the planning, construction and launching of new ones in Hungary.
1982-01-01
Radiation hardening of smart electronics
International Nuclear Information System (INIS)
Microprocessor based ''smart'' pressure, level, and flow transmitters were tested to determine the radiation hardness of this class of electronic instrumentation for use in reactor building applications. Commercial grade Complementary Metal Oxide Semiconductor (CMOS) integrated circuits used in these transmitters were found to fail at total gamma dose levels between 2500 and 10,000 rad. This results in an unacceptably short lifetime in many reactor building radiation environments. Radiation hardened integrated circuits can, in general, provide satisfactory service life for normal reactor operations when not restricted to the extremely low power budget imposed by standard 4--20 mA two-wire instrument loops. The design of these circuits will require attention to vendor radiation hardness specifications, dose rates, process control with respect to radiation hardness factors, and non-volatile programmable memory technology. 3 refs., 2 figs.
Energy Technology Data Exchange (ETDEWEB)
As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological information is needed to predict and optimize the film's electronic, optical and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector and synchrotron radiation in two simple geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly-packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of better and less expensive electronic and optoelectronic devices.
2010-02-19
International Nuclear Information System (INIS)
Early failure of an induction-hardening carbon steel pipe, which was used to transport tailing slurry, was caused by pitting corrosion. The microstructure on the internal pipe surface layer was found being a mixture of martensite, pearlite and ferrite. In this work, the pitting corrosion behavior of each constitute in the microstructure of steel is investigated with electrochemical noise analyses; the electronic properties of passive films were studied with Mott-Schottky relationship. It is found that the passive films formed on the materials under investigation are highly disordered n-type semiconductors. The high-to-low pitting susceptibility is ferrite > martensite > pearlite. The pitting resistance is related to the semiconductive nature of the passive film formed on each constitute. The pitting susceptibility increases with the donor concentration in the passive films. (author)
2003-08-24
Energy Technology Data Exchange (ETDEWEB)
Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke the potential dependent bandgaps used by previous authors.
2008-01-15
International Nuclear Information System (INIS)
Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke the potential dependent bandgaps used by previous authors.
2008-01-01
Photoconductive ultraviolet detectors based on ZnO films
British Library Electronic Table of Contents (United Kingdom)
Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8mA, and a slow photoresponse with a rise time of 5min and a decay time of 7min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the d...
2006-01-01
Photocatalytic degradation of gaseous pyridine over zeolite-supported titanium dioxide
Energy Technology Data Exchange (ETDEWEB)
The photocatalyzed degradation of pyridine in the gas phase was investigated using titanium dioxide semiconductor supported on mordenite. The complete mineralization was found to occur over a catalyst containing 75 wt% TiO{sub 2} and 25 wt% mordenite in about 180 min in the presence of saturated water vapor at O{degrees}C (4.6 Torr). Low water vapor pressure of 0.096 Torr was found to be sufficient to achieve a reasonably high percentage and rate of degradation. Diffusion of pyridine within the catalyst adversely affects the activity when the thickness of the catalyst coating exceeds the penetration depth of illumination. The activity of the zeolite-supported catalysts was higher than that of TiO{sub 2}. The photonic efficiency for the complete mineralization of pyridine to CO{sub 2} was determined to be 0.48. 29 refs., 6 refs., 1 tab.
1994-09-01
Energy Technology Data Exchange (ETDEWEB)
This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.
1993-01-01
New III-V cell design approaches for very high efficiency
Energy Technology Data Exchange (ETDEWEB)
This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.
1993-01-01
Energy Technology Data Exchange (ETDEWEB)
Radionuclide X-ray fluorescence analysis for nondestructive determination of Fe, Zn, Pb, and Br in air samples collected on nitrocellulose membrane filter Synpor 4 is described. A /sup 238/Pu source for the excitation and a semiconductor Si/Li detector for the detection of characteristic and L-fluorescent radiation of the above elements were used. A correction method based upon the measurements of simple or multiple Compton scattering for compensation of varying mass per unit area values in sample deposits was theoretically proposed and experimentally tested. The results obtained both with and without the correction were compared and good agreement with those given by atomic absorption spectrometry was observed.
1981-01-01
Modeling of an Inductive Adder Kicker Pulser for a Proton Radiography System
Energy Technology Data Exchange (ETDEWEB)
An all solid-state kicker pulser for a proton radiography system has been designed. Multiple solid-state modulators stacked in an inductive-adder configuration are utilized in this kicker pulser design. Each modulator is comprised of multiple metal-oxide-semiconductor field-effect transistors (MOSFETs) which quickly switch the energy storage capacitors across a magnetic induction core. Metglas is used as the core material to minimize loss. Voltage from each modulator is inductively added by a voltage summing stalk. A circuit model of a prototype inductive adder kicker pulser modulator has been developed to predict the performance of the pulser modulator. The modeling results are compared with experimental data.
2001-06-12
Energy Technology Data Exchange (ETDEWEB)
Sulfuric acid hydrogen peroxide mixtures (SPM) are commonly used in the semiconductor industry to remove organic contaminants from wafer surfaces. This viscous solution is very difficult to rinse off wafer surfaces. Various rinsing conditions were tested and the resulting residual contamination on the wafer surface was measured. The addition of small amounts of a chemical base such as ammonium hydroxide to the rinse water has been found to be effective in reducing the surface concentration of sulfur and also mitigates the particle growth that occurs on SPM cleaned wafers. The volume of room temperature water required to rinse these wafers is also significantly reduced.
1997-08-01
International Nuclear Information System (INIS)
An instrumental neutron activation technique of determining molybdenum in ores is based on measuring gamma-activity of the "9"9Mo isotope with the use of planar and coaxial semiconductor spectrometers. A lot consisting of 50 portions, 0.5 g each, is being irradiated for 10 hours by a flow of neutrons with the density of 10"1"2 n/cm"2xsec. On the lot being allowed to stay for 3-4 days, its activity is measured during 1-5 minutes. Monoethalons based upon phenol-formaldehyde resin are used as standards. The sensitivity of the technique is 10"-"4%, reproducibility error being not higher than 10%, efficiency up to 50 portions for a working shift.
Generation of number-phase minimum uncertainty states
Energy Technology Data Exchange (ETDEWEB)
The difference between the two nonclassical lights, i.e., the squeezed state and number-phase minimum uncertainty state (NUS) is discussed. The four different generation principles for NUS are described. They are: unitary evolution using self-phase modulation; nonunitary state reduction by the first kind measurement; controlled state reduction by quantum correlation measurement-feedback, and high saturated laser oscillation with suppressed-pump-noise. The constant current-driven semiconductor laser based on the last principle generated the NUS with photon number noise reduced below the standard quantum limit by 40 percent in the entire frequency region from dc to 1.1 GHz. Several applications of NUS including quantum communication, quantum mechanical computers and interferometric gravitational detection are discussed briefly. This presentation is represented by viewgraphs only.
1987-01-01
Ge/Si nanowire mesoscopic Josephson junctions
The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced superconductivity in undoped Ge/Si core/shell NW heterostructures contacted by superconducting leads. By using a top gate electrode to modulate the carrier density in the NW, the critical supercurrent can be tuned from zero to greater than 100 nA. Furthermore, discrete sub-bands form in the NW due to confinement in the radial direction, which results in stepwise increases in the critical current as a function of gate voltage. Transport measurements on these superconductor-NW-superconductor devices reveal high-order (n = 25) resonant multiple Andreev reflections, indicating that the NW channel is smooth and the charge transport is highly coherent. The ability to create and control coherent superconducting ordered states in ...
2006-01-01
Energy Technology Data Exchange (ETDEWEB)
A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.
1999-01-01
Energy Technology Data Exchange (ETDEWEB)
A focused ion beam (FIB) system produces a final beam spot size down to 0.1 {mu}m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 m or less. 13 figs.
1999-08-31
International Nuclear Information System (INIS)
Trends in front-end-of-line technology are discussed. At the chip level, many of the important parameters are published in the National Technology Roadmap for Semiconductors in 1994. At the device and circuit level, both bipolar and CMOS are scalable. However, the large standby power of bipolar circuits severely limits the integration level of bipolar chips. The inherently low standby power of CMOS, on the contrary, allows the integration level of CMOS circuits to continue increasing with scaling. In reality, both the electric field and power density of CMOS devices have been gradually rising over the generations owing to non-scaling effects of thermal voltage and silicon bandgap. As power supply voltage reaches 1.5V and below, circuit performance can only be gained at the expense of higher active or standby power of the chip. Implications of device scaling on contact and silicide technology are addressed. Trends of local and global interconnect scaling are ...
Excited states in electronic structure calculations
Energy Technology Data Exchange (ETDEWEB)
A first-principles quasiparticle approach to the electronic excitation energies in crystals and at surfaces is described. The quasiparticle energies are calculated within the GW approximation for comparison with photoemission and other spectroscopic experiments. Applications of the method to bulk semiconductors and the Si(111)2[times]l, Ge(111)2[times]l. and H/Si(III) surfaces are presented. In both cases, significant self-energy corrections arising from many-electron effects to the excitation energies are found. Using atomic positions from total energy minimization, the calculated excitation energies explain quantitatively the experimental spectra. This approach thus provides an ab initio means for analyzing and predicting results from spectroscopic probes.
1992-07-01
International Nuclear Information System (INIS)
The excitation functions of the reactions "9"8Mo(d,p)"9"9Mo and "1"0"0Mo(d,p)"1"0"1Mo have been determined by irradiation of stacked foils with deuterons of energies less than 13 MeV and non-destructive determination of the absolute activity of the Mo radioisotopes by semiconductor #gamma#-ray spectrometry. From the excitation functions, the thick-target yields and the saturation production rates of "9"9Mo and "1"0"1Mo for deuteron energies of 13.0 MeV and 11.7 MeV have been calculated. Implications for the production of "9"9Mo for generators of sup(99m)Tc are discussed. (author).
Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors
Energy Technology Data Exchange (ETDEWEB)
By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.
2009-08-15
Designed defects in 2D antidot lattices for quantum information processing
DEFF Research Database (Denmark)
We propose a new physical implementation of spin qubits for quantum information processing, namely defect states in antidot lattices defined in the two-dimensional electron gas (2DEG) at a semiconductor heterostructure. Calculations of the band structure of a periodic antidot lattice are presented. A point defect is created by removing a single antidot, and calculations show that localized states form within the defect, with an energy structure which is robust against thermal dephasing. The exchange coupling between two electrons residing in two tunnel-coupled defect states is calculated numerically. We find results reminiscent of double quantum dot structures, indicating that the suggested structure is a feasible physical implementation of spin qubits.
2008-01-01
Delta connected resonant snubber circuit
Energy Technology Data Exchange (ETDEWEB)
A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.
1998-01-01
International Nuclear Information System (INIS)
Off-axis electron holography is used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope (TEM) using focused ion beam (FIB) milling from the substrate side of the semiconductor device. The measured electrostatic potential is compared with results obtained from TEM specimens prepared using the more conventional 'trench' FIB geometry. The use of carbon coating to remove specimen charging effects, which result in electrostatic fringing fields outside 'trench' specimens, is demonstrated. Such fringing fields are not observed after milling from the substrate side of the device. Analysis of the measured holographic phase images suggests that the electrically inactive layer on the surface of each FIB-milled specimen typically has a thickness of 100 nm.
2005-04-01
Calculation of the vibrational properties of LiMgAs
Energy Technology Data Exchange (ETDEWEB)
We have studied the vibrational properties of the filled tetrahedral semiconductor LiMgAs and its binary analog AlAs by using the plane-wave pseudopotential method within density functional theory. The calculated lattice constants for the studied compounds are in good agreement with previous theoretical and experimental results. The phonon dispersion curves and phonon density of states are calculated by using density functional perturbation theory. The sound speeds in different directions are quantitatively similar in LiMgAs and AlAs. The assignment of the zone center modes to the relative motion of the atoms shows that the lower optic modes are due to the Mg-As pair vibrations, while for the upper ones the Li-Mg pair dominates, which is attributed to the smaller Mg atom mass. The longitudinal interatomic force constant of Mg-As is about 66% higher than that of Li-As, showing the relatively high covalency of the former bond.
2009-07-29
Basic Sciences Branch annual report, FY 1990
Energy Technology Data Exchange (ETDEWEB)
This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL's in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy's National Photovoltaic Research Program plans.
1991-12-01
Basic Sciences Branch annual report, FY 1990
Energy Technology Data Exchange (ETDEWEB)
This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL`s in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy`s National Photovoltaic Research Program plans.
1991-12-01
International Nuclear Information System (INIS)
In this work passive films formed in AISI 304 stainless steel were envisaged as semiconductors and studied by means of photoelectrochemistry and Mott-Schottky plots. The passive films were potentiostatically formed at different potentials (0.2-0.8V) in a basic borate/boric acid solution without and with addition of NaCl (0.5 and 1g/l) and at various temperatures in the range 8-60"oC. The influence of these parameters on the photocurrent, quantum efficiency, bandgap energy and density of charge carriers was determined. The results show that the experimental conditions at which the films are formed influence the semiconductive properties of the film, which seem to be related to the higher or lower stability of the film. An Arrhenius type of relationship was also found between the density of charge carriers and temperature, leading to the determination of an activation energy. (author) 13 refs., 7 figs.
1988-07-01
Energy Technology Data Exchange (ETDEWEB)
An apparatus capable of producing current or voltage controlled positive and negative ion beams in 1-atm oxidizing and nonoxidizing ambients between 25/sup 0/ and 950 /sup 0/C is presented. The apparatus utilizes a point-to-plane corona discharge in the gas phase. Room-temperature experiments revealed that the small differences in ion beam shape between the two polarities is primarily due to the difference in applied voltage required to produce the same current for the two polarities. Due to increased ion mobility and decreased threshold voltage at higher temperatures, a slight broadening of the ion beam current-density profiles for both positive and negative ions is predicted.
1984-09-01
International Nuclear Information System (INIS)
Energy harvesting systems stimulate the development of power management for low power consumption applications. Improving the converter efficiency of power management circuits has become a significant issue in energy harvesting system design. This paper presents a variable step-down conversion ratio switched capacitor (SC) DC-DC converter to advance the converter efficiency of charge on the stored capacitor in a wireless monitoring system of orthopedic implants. The converter is designed to work at 1 MHz switching frequency and achieves 15 to 2 V conversion. Measurement results show that the converter efficiency can reach 42% including all circuit power consumption, which is much higher than previous work. (semiconductor integrated circuits)
2009-12-01
A compensating method of an imaging plate response to clinical proton beams
Energy Technology Data Exchange (ETDEWEB)
For charged particle irradiations, the response of an imaging plate (IP) changes around the Bragg peak. Therefore, an appropriate compensation is necessary for the evaluation of dose distribution formed by charged particles such as protons. In this paper, the response of IPs to clinical proton beams is investigated. An experimentally-obtained depth-dose distribution (an ordinary Bragg curve) by a silicon semiconductor detector (SSD) is employed to evaluate the compensation factors as a function of proton penetrating depth, i.e. residual range. A typical dose distribution in a water phantom formed by an L-shaped bolus is measured by IPs and corrected by using the information of those compensation factors; the residual proton range is successfully calculated by the pencil beam algorithm at an arbitrary point. The results show a good agreement with the measurements by the SSD within the rms error of 3.0%.
2002-04-01
Silicon purification melting for photovoltaic applications
Energy Technology Data Exchange (ETDEWEB)
The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...
2000-04-01
Energy Technology Data Exchange (ETDEWEB)
The effect of various window layers for InP solar cells are studied. Window materials that have type 1 and type 2 alignment in the window/emitter interface are compared. All window materials that form a type 2 alignment with InP, such as Al{sub 0.20}In{sub 0.80}P, Ga{sub 0.20}In{sub 0.80}P, Al{sub 0.55}In{sub 0.45}As and Al{sub 0.60}In{sub 0.40}P, cause a high interface recombination velocity, which deteriorates the carrier collection. This recombination takes place due to the spatially indirect quantum well transition between the triangular quantum wells formed in the interface. ZnSe as a window layer material with type 1 alignment does not have this problem, but still decreased response in the short wavelength region is observed due to misfit dislocation induced trap sites. Future prospects for the window layer development for InP are discussed. The discussion is extended also to other III-V semiconductor based solar cell materials, such as Ga{sub 0.5}In{sub ...
1994-12-31
Rapid yield learning through optical defect and electrical test analysis
Energy Technology Data Exchange (ETDEWEB)
As semiconductor device density and wafer area continue to increase, the volume of in-line and off-line data required to diagnose yield-limiting conditions is growing exponentially. To manage this data in the future, analysis tools will be required that can automatically reduce this data to useful information, e.g., by assisting the engineer in rapid root-cause diagnosis of defect generating mechanisms. In this paper, the authors describe a technology known as Spatial Signature Analysis (SSA) and its application to both optically-detected defect data as well as electrical test (e-test) bin data. The results of a validation study are summarized that demonstrate the effectiveness of the SSA approach on optical defect wafermaps through field-testing at three semiconductor manufacturing sites on ASIC, DRAM and SRAM products. This method has been extended to analyze and interpret electrical test data and to provide a pathway for correlation of this ...
1998-02-01
Energy Technology Data Exchange (ETDEWEB)
Analyses of process system properties were continued for important chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major activities were devoted to physical, thermodynamic and transport property data for silicon. Property data are reported for vapor pressure heat of vaporization, heat of sublimation, liquid heat capacity and solid heat capacity as a function of temperature to permit rapid usage in engineering. Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for production of silicon was initiated. The process is based on hydrogen reduction of dichlorosilane (DCS) to produce the polysilicon. The chemical vapor deposition reaction for DCS is faster in rate than the conventional process route which utilizes trichlorosilane (TCS) as the silicon raw material. Status and progress are reported for primary activities of base case ...
1980-03-01
Polarization characteristics and mode competition experiment analyses of semiconductor lasers
Energy Technology Data Exchange (ETDEWEB)
This report describes the experimental researches on the polarization Characteristics of symmetric GaAs-GaAlAsP double heterojunction lasers, and analyses the mode-competition processes of these lasers. The experiments showed that semiconductor laser is emitted spontaneously and does not indicate optical polarization characteristic when it is biased under the threshold current. When it is biased above the threshold current, the laser for thin active layer of d = 0.15approx.0.40 ..mu..m is generally observed only in fundamental order mode, and TE mode polarization is predominant. At this time, polarization selection is dependent on Fabry-Perot cavity facet (cleaved face) mode reflectivity R/sub 0/. But TM mode is saturated at the threshold, the current applied to the laser above the threshold is used to enhance the TE polarization when the active thickness d is larger than 0.4 ..mu..m, the competition between TE and TM mode, fundamental order an higher order mode ...
1982-11-01
Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals
Energy Technology Data Exchange (ETDEWEB)
This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface ...
2002-12-31
Metal Nanoparticles Preparation In Supercritical Carbon Dioxide Solutions
Energy Technology Data Exchange (ETDEWEB)
The novel optical, electronic, and/or magnetic properties of metal and semiconductor nanoparticles have resulted in extensive research on new methods for their preparation. An ideal preparation method would allow the particle size, size distribution, crystallinity, and particle shape to be easily controlled, and would be applicable to a wide variety of material systems. Numerous preparation methods have been reported, each with its inherent advantages and disadvantages; however, an ideal method has yet to emerge. The most widely applied methods for nanoparticle preparation include the sonochemical reduction of organometallic reagents,(1&2) the solvothermal method of Alivisatos,(3) reactions in microemulsions,(4-6) the polyol method (reduction by alcohols),(7-9) and the use of polymer and solgel materials as hosts.(10-13) In addition to these methods, there are a variety of methods that take advantage of the unique properties of a supercritical fluid.(14&15) ...
2004-04-01
Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs
Energy Technology Data Exchange (ETDEWEB)
The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination ...
1999-02-23
The galvanomagnetic properties of single-crystal samples of the Bi{sub 0.93}Sb{sub 0.07} semiconductor alloy with the electron density n = 1.6 x 10{sup 17} cm{sup -3} in magnetic fields up to 14 T at T = 1.6 K have been investigated. The resistivity {rho} and Hall coefficient R have been measured as functions of the magnetic field directed along the binary axis of a crystal for a current flowing through a sample along the bisector axis; i.e., the components {rho}{sub 22} and R{sub 32,1} have been measured. The strong anisotropy of the electron spectrum of the samples makes it possible to separately observe quantum oscillations of the magnetoresistance {rho}{sub 22}(H) for H -parallel C{sub 2} in low magnetic fields for two equivalent ellipsoids with small extremal cross sections (secondary ellipsoids) and in high magnetic fields for electrons of the ellipsoid with a large extremal cross section (main ellipsoid). An increase in the energy of the electrons of ...
2010-08-15
Energy Technology Data Exchange (ETDEWEB)
An overview of the understanding of correlation between valence electron and the optical properties of binary (A{sup N}B{sup 8-N}) and ternary (A{sup N}B{sup 2+N}C{sub 2}{sup 7-N}) tetrahedral semiconductors is presented here. We have presented two expressions relating the dielectric constant and electronic polarizability for the transition metal chalcogenides and pnictides (A{sup II}B{sup VI} and A{sup III}B{sup V}) and chalcopyrites (A{sup I}B{sup III}C{sub 2}{sup VI} and A{sup II}B{sup IV}C{sub 2}{sup V}) with the product of valence electrons and nearest neighbour distance d (A). The dielectric constant and electronic polarizability of these solids exhibit a linear relationship when plotted on a log-log scale against the nearest neighbour distance d (A), but fall on different straight lines according to the valence electron product of the compounds. We have applied the proposed relation on these solids and found a better agreement with the experimental data as ...
2009-11-03
Perovskite-type SrTi1-xNbx(O,N)3 compounds: Synthesis, crystal structure and optical properties
International Nuclear Information System (INIS)
The synthesis, crystal structure, thermal stability and absorbance spectra of perovskite-type oxynitrides with the general formula SrTi1-xNbx(O,N)3 (x=0.05, 0.10, 0.20, 0.50, 0.80, 0.90, 0.95) have been investigated. Oxide samples were prepared by a polymerized complex synthesis route and post-treated under ammonia at 850 oC for 24 h to substitute nitrogen for oxygen. Synchrotron X-ray powder diffraction (XRD) evidenced that the mixed oxide phases were all transformed into oxynitrides with perovskite-type structure during a thermal ammonolysis. SrTi1-xNbx(O,N)3 with compositions x?0.80 crystallized in a cubic and samples with x?0.90 in a tetragonal structure. The Rietveld refinement indicated a continuous enlargement of the lattice parameters towards higher niobium content of the samples. Thermogravimetric analysis (TGA) and hotgas extraction revealed the dependence of the nitrogen incorporation upon the degree of niobium substitution. It showed that more nitrogen was detected in the ...
2011-04-01
[Comparative study on the historical evolution of field surgery between China and Russia].
Russian field surgery with its long history and distinctive characteristics has accumulated great experience in the long-time practice of warfare. Chinese field surgery was established and developed on the basis of studying from the Russian model, which opened up new areas of traffic medicine, molecular traumatology and assessment of biological effects on weapon destruction and carried out in-depth research on wound ballistics, blast injury, burns and combined injury etc. through decades of construction with continuous development and innovation, and a series of major achievements have been made in these fields. By making comparative study on the historical evolution, structure system, characteristics of campaigns and development of society between Chinese and Russian field surgery, it can be found that there are great gaps between them and we should strengthen the research for more rapid development. PMID:20510098
2010-03-01
Why the sunspot cycle is double peaked
Many sunspot cycles are double peaked. In 1967 Gnevyshev suggested that actually all cycles have two peaks generated by different physical mechanisms, but sometimes the gap between them is too short for the maxima to be distinguished in indices of the total sunspot activity. Here we show that indeed all cycles have two peaks easily identified in sunspot activity in different latitudinal bands. We study the double peaks in the last 12 sunspot cycles and show that they are manifestation of the two surges of toroidal field - the one generated from the poloidal field advected all the way on the surface to the poles, down to the tachocline and equatorward to sunspot latitudes, and another one generated from the poloidal field diffused at midlatitudes from the surface to the tachocline and transformed there into toroidal field. The existence of these two surges of toroidal field is due to the relative magnitudes of the speed of the large-scale solar meridional ...
2011-01-01
British Library Electronic Table of Contents (United Kingdom)
We investigated phase transition of ilmenite-type AgSbO3 to pyrochlore by post-heat treatment and the synergy effect of the mixed phases of AgSbO3 on the photocatalytic activities to enhance the activities. The AgSbO3 with an ilmenite structure was prepared by a cation-exchange method. Phase transition from the ilmenite to pyrochlore occurred by proper control of post-heat treatment. The sample that was obtained by post-heat treatment of ilmenite-type AgSbO3 at 660^oC for 3h consisted of both of the ilmenite and pyrochlore phases, and the sample at 685^oC for 4h mainly consisted of the pyrochlore phase. Together with an increase in the ratio of the pyrochlore phase, the optical absorption spectra blue-shifted. The band gaps of single phases of the ilmenite and the pyrochlore were 2.4 and 2...
2010-01-01
British Library Electronic Table of Contents (United Kingdom)
Abstract A fabrication process for Emitter-Wrap-Through solar cells on monocrystalline material with high quality gap passivation by wet thermal silicon dioxide is investigated. Masking and structuring steps are performed by screen-printing technology. Via-holes are created by an industrially applicable high-speed laser drilling process. The cell structure features a selective emitter structure fabricated in a single high temperature step: a highly doped emitter at the via-holes and the rear side, allowing for a low via-hole resistivity as well as a low resistivity contact to screen-printed pastes, and a moderately doped front side emitter exhibiting high quantum efficiency in the low wavelength range. Therefore a novel approach is applied depositing either doped or undoped PECVD silicon d...
2011-01-01
Schooling for All in South Africa: Closing the Gap
It has been widely assumed that South Africa has achieved universal basic education. Through an analysis of the 2001 census and two national enrolment datasets rather than statistical projections, this study re-examines this assumption and provides new estimates of enrolment levels in primary, basic and secondary education. Using GER, NER, and ASER indicators, disaggregated by gender and province, the study shows that access to education in South Africa is not as widespread as published sources note. While statistics show that national access levels are lower than prevailing estimates, the relatively high levels of access in some of the most disadvantaged provinces suggest the need to re-evaluate assumptions about targets for universal access for developing regions. In addition, the analysis reveals South Africa's unexpected and provocative gendered patterns of access and participation.
2007-03-01
Energy Technology Data Exchange (ETDEWEB)
The passive films formed on 316L stainless steel in various NaCl solutions have been investigated by capacitance measurements (Mott-Schottky). Pitting parameters have been determined using the galvano-kinetic polarisation method. The obtained results reveal the existence of a shallow and a deep donor level localised in the band gap of the semiconducting oxide film. These energy levels are due to iron ions in the tetrahedral and octahedral positions. It also appears that the participation of the deep donor level effects the electric field. The study developed allows us to compare characteristic parameters of the electronic structure of the passive film to those related to pitting susceptibility. (authors) 25 refs.
1998-04-01
Referential Failures and Affective Reactivity of Language in Schizophrenia and Unipolar Depression
British Library Electronic Table of Contents (United Kingdom)
Reference failures, and their increase in affectively negative conditions (known as affective reactivity of speech), are more frequently observed in schizophrenia patients than in normal controls, but no information is available comparing schizophrenia with depression, ie, a mental disorder closely linked to the concept of affective reactivity. To address this gap in the literature, the present study compared 24 schizophrenia inpatients, 21 unipolar depression inpatients and 21 normal controls. Two 10-minute conversational speech samples (1 on negative and 1 on positive memories) were collected from each patient. The transcripts of the audiotaped interviews were analyzed blindly for frequencies of 6 types of referential failures, employing the Communication Disturbances Index, adapted for ...
2011-01-01
Point defects in dilute nitride III-N-As and III-N-P
International Nuclear Information System (INIS)
We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.
2006-04-01
Phenomenological dynamics of loop quantum cosmology in Kantowski-Sachs spacetime
The full theory and the semiclassical description of loop quantum cosmology (LQC) have been studied in the Friedmann-Robertson-Walker and Bianchi I models. As an extension to include both anisotropy and intrinsic curvature, this paper investigates the cosmological model of Kantowski-Sachs spacetime with a free massless scalar field at the level of phenomenological dynamics with the LQC discreteness corrections. The LQC corrections are implemented in two different improved quantization schemes. In both schemes, the big bang and big crunch singularities of the classical solution are resolved and replaced by the big bounces when the area or volume scale factor approaches the critical values in the Planck regime measured by the reference of the scalar field momentum. Symmetries of scaling are also noted and suggest that the fundamental spatial scale (area gap) may give rise to a temporal scale. The bouncing scenarios are in an analogous fashion of the Bianchi I model, ...
2008-01-01
Optimal Dynamical Range of Excitable Networks at Criticality
A recurrent idea in the study of complex systems is that optimal information processing is to be found near bifurcation points or phase transitions. However, this heuristic hypothesis has few (if any) concrete realizations where a standard and biologically relevant quantity is optimized at criticality. Here we give a clear example of such a phenomenon: a network of excitable elements has its sensitivity and dynamic range maximized at the critical point of a non-equilibrium phase transition. Our results are compatible with the essential role of gap junctions in olfactory glomeruli and retinal ganglionar cell output. Synchronization and global oscillations also appear in the network dynamics. We propose that the main functional role of electrical coupling is to provide an enhancement of dynamic range, therefore allowing the coding of information spanning several orders of magnitude. The mechanism could provide a microscopic neural basis for psychophysical laws.
2006-01-01
On the Critical Coupling for Kuramoto Oscillators
The celebrated Kuramoto model captures various synchronization phenomena in biological and man-made dynamical systems of coupled oscillators. It is well-known that there exists a critical coupling strength among the oscillators at which a phase transition from incoherency to synchronization occurs. This paper features three contributions. First, we characterize and distinguish the different notions of synchronization used throughout the literature and formally introduce the concept of phase cohesiveness as an analysis tool and performance index for synchronization. Second, we review the vast literature providing necessary, sufficient, implicit, and explicit estimates of the critical coupling strength in the finite and infinite-dimensional case. Finally, we present the first explicit necessary and sufficient condition on the critical coupling strength to achieve synchronization in the finite-dimensional Kuramoto model for an arbitrary distribution of the natural frequencies. The ...
2010-01-01
Energy Technology Data Exchange (ETDEWEB)
The present paper describes the application of the commercial CFD-code FLUENT 6.1 to the numerical simulation of the flow field in a high specific speed radial fan. Two-dimensional as well as three-dimensional computations are performed using the steady 'Frozen-Rotor method' as well as the unsteady 'Sliding-Mesh method'. The predicted performance curves of the radial fan are compared with the results obtained from measurements on a test stand. Due to the relatively low computation times, the 'Frozen-Rotor method' can be used routinely for design purposes. The results of this approach can be improved if the leakage flow through the gap between the inlet nozzle and the impeller is taken into account. (orig.)
2005-11-01
Nuclear forensic investigations with a focus on plutonium
International Nuclear Information System (INIS)
Since the beginning of the 1990s when the first seizures of nuclear material were reported, the IAEA has recorded over 200 cases of illicit trafficking of nuclear materials. Despite the decreasing frequency of nuclear material seizures, particularly the ones involving weapons-grade material, the issue continues to attract public attention and is a reason for concern due to the hazard associated with such materials. Once illicitly trafficked nuclear material has been intercepted, the questions of its intended use and origin are to be addressed. Especially the origin is of prime importance in order to close the gaps and improve the physical protection at the sites where the theft or diversion occurred. To answer these questions, a dedicated nuclear forensics methodology has been developed. In this paper an overview is given on the methodologies used, on the past and on-going developments and on the experience gathered. Some selected examples shall illustrate the ...
2007-10-11
Multiple resonances and Coulomb blockade splitting in a quantum dot-DNA composite
British Library Electronic Table of Contents (United Kingdom)
Inspired by the recent realizations of quantum dot (QD)-DNA conjugation, we study the spectral density of a magnetic impurity coupled to a mesoscopic semiconducting host. Using a combination of exact diagonalization technique and an analytic approach, we demonstrate that various types of resonances occur according to the relative position of impurity levels (IL) with respect to the host levels (HL). While the usual Coulomb peaks appear when the IL lie inside a band gap, with IL approaching HL and hybridization activated, they shift nonlinearly with the repulsion strength and even undergo splitting for a strong hybridization. When IL merge into HL, multiple resonances of a comblike structure are found along with a parity effect.
2011-01-01
International Nuclear Information System (INIS)
In the frame of the Primary Wall Module prototype manufacturing for ITER, a consistent R and D phase was conducted in order to identify the industrial allowable tolerances and manufacturing problems which would occur when joining pieces by HIPping process during the PW module manufacturing. The purpose of this development was to give as industrial as possible manufacturing routes for joining together large Stainless Steel or DS-Copper pieces with Stainless Steel tubes and for bonding Beryllium tiles onto a curved component surface. The study concerned surface preparations, allowable gaps and joint geometry, Beryllium tile geometry, Titanium interlayer thickness, etc. This R and D phase also allowed the development and validation of different ultrasonic inspection tools needed for plate-plate, tube-plate, edge to edge plate bonding.
2001-10-01
Locally resonant acoustic metamaterials with 2D anisotropic effective mass density
British Library Electronic Table of Contents (United Kingdom)
A two-dimensional (2D) lattice model with anisotropic resonant microstructures is found to provide an anisotropic band gap structure. A 2D continuum with anisotropic effective mass density is introduced to represent this lattice system. Two methods are proposed to derive the equivalent continuum. In the first method, the effective mass density of the equivalent continuum is obtained by matching the dispersion relations for harmonic waves propagating in the principal directions. The second approach employs an approximate estimation of the effective mass density by volume-averaging an effective mass that represents the resonant microstructure. For both equivalent continuum models, the effective mass density is frequency-dependent and may become negative in certain frequency ranges. Subsequen...
2011-01-01
Homogenation of acoustic metamaterials of Helmholtz resonators in fluid
Energy Technology Data Exchange (ETDEWEB)
By using a two-step homogenization approach, we derive analytical formulas of effective mass density {rho}{sub e} and effective bulk modulus B{sub e} for two- and three-dimensional acoustic metamaterials of Helmholtz resonators (HRs) in fluid. A negative B{sub e} is found at certain frequencies due to the monopolar resonance, leading to a low-frequency acoustic band gap. A unified picture is presented for metamaterials of HRs and three-component metamaterials of negative {rho}{sub e}. Our work supports recent observations in a one-dimensional array of HRs [N. Fang et al., Nat. Mater. 5, 452 (2006)] and presents important high-dimensional extensions for exploring more fascinating phenomena.
2008-05-01
British Library Electronic Table of Contents (United Kingdom)
Summary Indigenous people demonstrably lived along rivers and around lakes and wetlands of Australia's Murray-Darling Basin in pre-European times. Waterways were, and continue to be, of major significance to the society and culture of Aboriginal peoples throughout Australia. Historically, they exploited most of the fauna - from mussels and crayfish, to fish and birds - and either ate, or used for other purposes, many species of aquatic plants. Such practices placed them in the role of environmental modifiers, a role played by all human groups from both past and present. They built sophisticated fish traps, cut gaps in river banks to allow fish to move on to floodplains, and there is evidence that they practised a form of fish culture by creating small impoundments in which small fish could...
2007-01-01
The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.
2000-02-01
Energy Technology Data Exchange (ETDEWEB)
The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.
2000-02-01
International Nuclear Information System (INIS)
The effect of both dopant and neutron radiation on the optical and thermal properties of polyvinyl chloride (PVC) has been studied. The doped samples with Pb and Cd were irradiated with a 14 MeV-neutron fluence in the range 7-28.8 x 10"9 n/cm"2. The optical energy gap E_o_p exhibits a significant dependence on the type of additive and the neutron irradiation fluence. The specific heat at constant pressure C_p showed a nonmonotonical change with radiation fluence. The results of this study show that PVC:Pb behaves as a crystalline structure which is only slightly affected by neutron irradiation, while PVC:Cd is highly affected. (author).
1994-11-01
Evolving Attachment Theory: Beyond Bowlby and Back to Darwin
British Library Electronic Table of Contents (United Kingdom)
Abstract- In our reply to M. H. van IJzendoorn and M. J. Bakermans-Kranenburg (this issue) and R. A. Thompson (this issue), we highlight 2 challenges that attachment researchers face today: (a) closing the gap between the developmental and social psychological traditions and (b) connecting attachment theory to the broader field of evolutionary psychology. We contend that an evolutionary life history approach can contribute to both goals and argue that attachment researchers should consider moving beyond some of Bowlby's original formulations in order to permit further advancement of the field. Finally, we review van IJzendoorn and Bakermans-Kranenburg's criticism of the hypothesis that sex differences in attachment arise in middle childhood; we conclude that the claim that the hypothesis h...
2010-01-01
Evaluation on codes to estimate the number of failed rods using Korean PWR activity data
International Nuclear Information System (INIS)
The coolant activity analysis to obtain the information about the fuel failure has been studied long before. And several codes have been developed to estimate the number of fuel failures through evaluating volatile and inert fission products release in coolant from the defective fuel. These codes use a fission product diffusion model coupled with a mass balance in the gap and coolant. But each code has a different model to assess fuel failure. In order to develop the model to estimate the number of fuel failures we analysis well-known code's models such as CHIRON, CADE, IODYNE, and CAAP and compare accuracy through Korean PWR activity data
2010-10-01
Energy absorbers used against impact loading
International Nuclear Information System (INIS)
In the WWER-440 reactor the primary piping consists of six horizontal loops going radially from the pressure vessel, each loop having a horizontal steam generator. In this reactor type the relatively long primary piping with many curved sections requires special attention in order to successfully eliminate the consequences of the design basis accident. Emergency supports are located in appropriate places to restrict the movements of the pipe. Under normal conditions there is a gap of some centimeters between the pipe and a support so that in the pipe can be deformed freely under changing loads. This paper deals with those energy-absorbing structures used at the Loviisa Nuclear Power Plant for protection against impact loading. Places and circumstances where energy-absorbing structures are employed are specified. Development and design of impact absorber elements are discussed and impact tests are described. (Auth.).
1975-09-08
A declaration for achieving universal basic education adopted by the World Conference on Education for All in Jomtien, Thailand, as it relates to Latin America is discussed in this paper. The document then offers an examination of educational expansion in Latin America, a discussion of disproportionate educational budget cuts, and an analysis of challenges that stem from two trends: (1) the growing gap between population growth and educational expansion; and (2) low educational quality and high repetition rates. Proposals are offered for major, gradual educational reforms based on an increased level of fiscal resources, and a change in resource management responsive to economic needs. The major obstacle to implementation is argued to be the political economy of education and of adjustment. International support of local initiatives is important in achieving basic educational equity. (33 references) (LMI)
1990-09-01
British Library Electronic Table of Contents (United Kingdom)
Abstract. Malaria vector control targeting the larval stages of mosquitoes was applied successfully against many species of Anopheles (Diptera: Culicidae) in malarious countries until the mid-20th Century. Since the introduction of DDT in the 1940s and the associated development of indoor residual spraying (IRS), which usually has a more powerful impact than larval control on vectorial capacity, the focus of malaria prevention programmes has shifted to the control of adult vectors. In the Afrotropical Region, where malaria is transmitted mainly by Anopheles funestus Giles and members of the Anopheles gambiae Giles complex, gaps in information on larval ecology and the ability of An. gambiae sensu lato to exploit a wide variety of larval habitats have discouraged efforts to develop and impl...
2007-01-01
Energy Technology Data Exchange (ETDEWEB)
'Regional climate change: hydrology and land-use' is a topic that is being intensively discussed for quite a while already. At the same time, this topic demands consequences both on the level of politics and other decision makers. We scientists bear a particular responsibility for the analysis of existing data, targeted additional research to fill information gaps, and the critical evaluation and interpretation of the obtained results. The currently gathered sub-population of the scientific community is, albeit small, quite representative of a wide spectrum of activities and can very well offer a deeper insight into the current state-of-the-art. We deliberately organized the contributions such as to offer both overviews and results from detailed projects, as well as a close proximity of very well founded results with rather provocative hypotheses. (orig.)
2005-07-01
Can non-formal education keep working children in school? A case study from Punjab, India
British Library Electronic Table of Contents (United Kingdom)
This paper analyses the effectiveness of non-formal schools for working children in Jalandhar, Punjab, India, in mainstreaming child labourers into the formal education system through incentivised, informal schooling. Using a family fixed effects model and sibling data as an equivalent population comparison group, I find that the non-formal schools effectively provide an alternative to formal primary education and also show high success rates of mainstreaming and maintaining children into post-primary education relative to the control group. I find that the children within the non-formal schools are 40.47-50.07% more likely to still be studying relative to the sibling-inclusive control group, and have 1.976 to 3.389 years less of a gap in educational attainment. I conclude that the child l...
2010-01-01
An exergy based test protocol for truncated pyramid type solar box cooker
British Library Electronic Table of Contents (United Kingdom)
Developing a test standard/protocol for solar box type cookers has drawn a considerable interest among the researchers throughout the world. Recent publications on solar cookers emphasize the need of introducing the thermal performance indicators determined through exergy analysis. In the present paper, the time variation of instantaneous exergy output and energy output as function of its temperature and also of the instantaneous ambient temperature have been reported for truncated pyramid type solar box cooker and compared with those of box type cooker. Further, variations in the exergy lost with temperature difference have been depicted for the selected water temperature range from 60 degreeC to 95 degreeC. Based on this study, quality factor, exergy temperature difference gap product, a...
2011-01-01
Acoustic band gaps in arrays of neutral inclusions
British Library Electronic Table of Contents (United Kingdom)
We analyse numerically the acoustic stop band properties of an array of orthotropic coated cylinders whose elastic parameters are deduced from a geometric transform [H. Chen, C.T. Chan, Acoustic cloaking in three dimensions using acoustic metamaterials, Appl. Phys. Lett. 91 (2007) 183518]. We find that whereas a single coated inclusion is acoustically neutral at any frequency, an array of them might display some stop bands. More precisely, an array of freely vibrating coated voids is always neutral, whereas an array of clamped coated inclusions might display a zero frequency stop band. Interestingly, an array of radially symmetric coated inclusions behaves as local Helmholtz resonators, for which the eigenfield within each cloak is obtained in closed form, leading to a frequency estimate a...
2010-01-01
Abstracts of recent reports: Maryland power plant research program 1992 through 1997
Energy Technology Data Exchange (ETDEWEB)
The goals of the program include predicting the impact of proposed new generating facilities, evaluating proposed high voltage transmission lines, assessing the impact of existing generating facilities, forecasting future demand for electric power, and investigating numerous information gaps through a long-range research program. The Power Plant Assessment Division (PPAD) is responsible for all PSC licensing support, site specific research, and radiological monitoring. The list of reports summarizes information of over 190 technical publications that represent the Program`s formalized research and monitoring efforts over the last five years. Reports are listed in chronological order by topical heading.
1997-12-01
A non-resonant RF cavity loaded with amorphous alloy for proton cancer therapy
A non-resonant RF cavity loaded with amorphous alloy cores has been designed and tested. The cavity has a re-entrant structure loaded with 8 amorphous alloy toroidal core and its characteristic impedance is designed as 450 Omega . The RF power is fed by 1 kW solid state amplifier using a step-up transformer with 1:9 impedance ratio. In the high power test, an accelerating gap voltage of more than 900 V was measured with input power of 1 kW in the frequency range of 1 to 10 MHz. The voltage standing wave ratio (VSWR) was less than 2.0. The results prove that the cavity may be used successfully within a compact proton synchrotron for a cancer therapy facility. (3 refs).
1999-01-01
A Detector for 2-D Neutron Imaging for the Spallation Neutron Source
Energy Technology Data Exchange (ETDEWEB)
Abstract - We have designed, built, and tested a 2-D pixellated thermal neutron detector. The detector is modeled after the MicroMegas-type structure previously published for collider-type experiments. The detector consists of a 4X4 square array of 1 cm 2 pixels each of which is connected to an individual preamplifier-shaper-data acquisition system. The neutron converter is a 10B film on an aluminum substrate. We describe the construction of the detector and the test results utilizing 252Cf sources in Lucite to thermalize the neutrons.Drift electrode (Aluminum) Converter (10B) 3 mm Conversion gap neutron (-900 V)
2006-07-01
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