Energy Technology Data Exchange (ETDEWEB)

We report the use of ion beam induced charge imaging to characterise the charge signal uniformity of epitaxial gallium nitride radiation detectors. The detectors were fabricated from 2 {mu}m thick semi-insulating gallium nitride, grown by MOCVD on a sapphire substrate. A carrier concentration of 1.4x10{sup 15} cm{sup -3} was measured using capacitance-voltage measurements. Ion beam induced charge imaging was carried out with a 2 MeV alpha particle beam focussed to a 3 {mu}m diameter and raster scanned across the device. The resulting ion beam images show excellent charge signal uniformity in this material with no evidence of material defects or polycrystalline structure on the micrometer length scale. No evidence of charge signal trapping was observed in these devices.

British Library Electronic Table of Contents (United Kingdom)

This paper deals with surface defects of automobile outer panels, which alter significantly the vehicle quality. Such defects occur during springback, after forming or flanging steps, and are characterized by concave depression of small amplitude over the convex shape of the part. The aim of this work is to reproduce at the laboratory scale a surface defect that occurs after flanging on a geometry similar to a door upper corner. A dedicated device has been designed in order to generate small size surface defects during flanging of metallic thin sheets. The outer surface of the sample was digitalized and the spatial geometry of the defect was evaluated from curvature change along 2D profiles. This study shows that the flanging height does not influence significantly the surface defect geome...

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Ion Beam Induced Luminescence (IBIL) and Ion Beam Induced Charge Collection (IBICC) have been applied in the study of the luminescence emission efficiency and investigation of the homogeneity of the luminescence emission in phosphors. The IBIL imaging was performed by using sharply focused ion beams or broad/partially-focused ion beams. The luminescence emission homogeneity in samples was examined to reveal possible distributed crystal-defects that may lead to the inhomogeneity of the luminescence emission in samples.The purpose of the study is to search for suitable luminescent thin films that have high homogeneity of luminescence emission, large IBIL efficiency under heavy ion excitation, and can be placed as a thin layer on the top of microelectronic devices to be analyzed with Ion Photon Emission Microscopy (IPEM). The emission yield was found to be low for organic materials, due to saturation of the light output dependence on the energy deposition of heavy ...

International Nuclear Information System (INIS)

The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)

International Nuclear Information System (INIS)

Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift mobility, surface band bending, and surface capture coefficient for electrons. Samples grown (unintentionally n-type) by nitrogen-plasma-assisted molecular beam epitaxy primarily from two separate growth runs were examined. The results revealed carrier concentration in the range of (3-6)x10"1"6 cm"-"3 for one growth run, roughly 5x10"1"4-1x10"1"5 cm"-"3 for the second, and drift mobility in the range of 500-700 cm"2/(V s) for both. Nanowires were dispersed onto insulating substrates and contacted forming single-wire, two-terminal structures with typical electrode gaps of #approx =#3-5 #mu#m. When biased at 1 V bias and illuminated at 360 nm (3.6 mW/cm"2) the thinner (#approx =#100 nm diameter) nanowires with the higher background doping showed an abrupt increase in photocurrent ...

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Self-consistent electronic structure calculations have been performed on two compositions of scandium sulfide ScS and Sc/sub 3/S/sub 4/. The results of the calculation of ScS are similar to those obtained for other transition metal chalcogenides and are in excellent agreement with heat capacity and reflectance measurements as well as UPS experiments. The calculation of the defect structure indicates the creation of sulfur p nonbonding states in metal-deficient ScS. The valency of the metal ions remains unchanged upon the creation of vacancies.

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Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the ``polymorphs`` of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes ``worm holes`` in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100{degrees}C lock in the mechanical twins.

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Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare ...

International Nuclear Information System (INIS)

Nanocrystalline powders of GaN with grain sizes ranging from 2 to 30 nm were examined under high external pressures by in situ diffraction techniques in a diamond anvil cell at DESY (HASYLAB, Station F3). The experiments on densification of pure powders under high pressure were performed without a pressure medium. The mechanism of generation and relaxation of internal strains and their distribution in nanoparticles was deduced from Bragg reflections recorded in situ under high pressures at room temperature. The microstrain was calculated from the full-width at half-maximum (FWHM) values of the Bragg lines. It was found that microstrains in GaN crystallites are generated and subsequently relaxed by two mechanisms: generation of stacking faults and change of the size and shape of the grains occurring under external stress. (author)

Energy Technology Data Exchange (ETDEWEB)

There are currently no accepted industry standards for the tensile strain limits of girth welds. This paper investigated the behavior of girth welds with buried defects subjected to high longitudinal strains caused by soil movement. A strain design methodology based on a crack driving method was used to examine the factors influencing stain limits along with a constraint-sensitive fracture mechanics approach. No strength undermatching was used in the welds, and the defect location had no influence on crack driving force. The weld joint was assumed to have uniform tensile properties. A 3D finite element (FE) model was used to simulate pipe behavior. Symmetric boundary conditions were imposed on the symmetry planes, and uniform remote axial displacement was applied as the primary loading. Automated data processing routines were developed to extract and analyze the data. The crack driving force was computed directly from a crack tip deformation ...

British Library Electronic Table of Contents (United Kingdom)

On ships, tankers and similar vessels structural defects such as cracks and corrosion damage are typically repaired by welding. However, welding is unwanted hotwork on floating offshore units (FOUs) such as floating, production, storage and offloading (FPSO) and floating, storage and offloading (FSO) vessels because it requires shutdown of parts of the vessel thus resulting in expensive production delays. Bonded fibre composite material patch repairs can be used as an alternative to overcome the hazards of hotwork associated with welding. The patches are bonded over the defect and the integrity of the original structure is hence restored. The patch repair technology can also be utilised to provide upgrades, such as life extensions and higher design requirements. A recommended practice (RP)...

Energy Technology Data Exchange (ETDEWEB)

Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.

International Nuclear Information System (INIS)

Cr_2O_3 scales are found to form on Alloy 800 and a similar pure ternary alloy in air, and 1 and 50 atm. helium containing oxidizing impurities typical of those in an SGHTR. The strong temperature dependence and neglibible helium overpressure dependence indicate that gas transport through the scales is not rate controlling. Surface oxidation rates are therefore controlled by solid state diffusion and the low oxygen partial pressure dependence of the oxidation rate in Alloy 800 is ascribed to the presence of extrinsic defects in the Cr_3O_3 (due to doping by alloying elements) or to the presence of short circuit diffusion paths. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

GaN and Al{sub 1{minus}x}Ga{sub x}N films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10{sup 9} ohm-cm and 10{sup {minus}3}--10{sup {minus}8} cm{sup 2}/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

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Some of the results of property measurements of CeO{sub 2} and its solid solutions were reviewed. The deviation from stoichiometry of undoped and doped CeO{sub 2} was presented in several figures, which suggested that CeO{sub 2} fired at high temperatures in air might be nonstoichiometric in some degree. At low temperatures, the deviation from stoichiometry in doped CeO{sub 2} is higher than undoped CeO{sub 2}. As another interesting property, CeO{sub 2} shows high solubility to trivalent cations such as rare earth elements. A possible reason behind this high solubility was presented. The nonstoichiometric defect in undoped CeO{sub 2} and the trivalent cation in solid solution with CeO{sub 2} have to be compensated by other defects. The possible defect structures in this solid solution were reviewed and the most probable structure was chosen based on density measurement and impurity dependence of oxygen diffusion ...

International Nuclear Information System (INIS)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same ...

International Nuclear Information System (INIS)

Autoionizing and Auger transitions in atomic manganese and samarium have been experimentally investigated by observation of the ejected electrons in the energy region 0 to 40 eV following electron impact excitation with incident beams in the energy range 15-500 eV. Seventy-four spectral features are tabulated for manganese and a number of new assignments have been made based on pseudo-relativistic Hartree-Fock calculations and quantum defect analysis. A similar study of samarium reveals only a number of broad features in the ejected-electron energy range 8-10 eV. Three features have been observed consistently in the ejected-electron spectrum of samarium and assigned by comparison with previous work. (author).

Energy Technology Data Exchange (ETDEWEB)

Two approaches are used to analyse X-ray or neutron scattering by crystals with different dislocation ensembles. Analogy between the above concepts is discussed. The microscopical approach takes into account the detailed displacement field due to different types of dislocation arrangement in the crystal. Frequently a phenomenological concept operating with the ideas of displacements, strains and stresses arising in the materials under deformation is applied. Unfortunately, the phenomenological concept cannot take into account that similar stress distributions may have significantly different microscopic reasons. The comparison of the results obtained by both phenomenological and microscopic descriptions of scattering enables us to understand the connection between different types of strains and stresses in the crystal with the type of the defects in it. (orig.)

Energy Technology Data Exchange (ETDEWEB)

A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and ...

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We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 {mu}m In{sub x}Al{sub y}Ga{sub 1-x-y}N alloy grown on 0.5-1.0 {mu}m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In{sub x}Al{sub y}Ga{sub 1-x-y}N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch ...

International Nuclear Information System (INIS)

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping ...

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The theoretical treatment of the relation between the critical angle of planar channeling and the characteristics of crystal lattice defects is carried out. The predictions are made about some typical forms of the critical angle dependence on the mean-square static displacement produced by defects, and then these predictions are detailed for the cases of homogeneous disordering, spherical clusters of point defects and dislocation loops. Analytical results are supported by the exact computer calculations for the defects in the intermetallic A-15 compounds.

UK PubMed Central (United Kingdom)

Congenital deformities involving the coverings of the nervous system are called neural tube defects (NTDs). NTD can be classified as neurulation defects, which occur by stage 12, and postneurulation...Full Text Available

UK PubMed Central (United Kingdom)

Familial defective apolipoprotein (apo) B-100 is a genetic disease that leads to hypercholesterolemia and to an increased serum concentration of low density lipoproteins that bind defectively to the...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

An historic Strontianite-type specimen from Strontian, Scotland, UK, was characterized to broaden our knowledge on luminescence properties of common carbonates. These fibrous aggregates are Strontianite (Sr{sub x}Ca{sub 1-x}CO{sub 3}) with circa 6% of CaO, interfacial water, hydrosilicate anions and substitutional divalent cations, e.g., Ca{sup 2+}, Mn{sup 2+}, Fe{sup 2+} in structural Sr{sup 2+} positions. The specimen was analyzed by X-ray Fluorescence Spectrometry (XRF), Environmental Scanning Electron Microscopy coupled with an Energy Dispersive X-ray Spectroscopy (ESEM-EDS) probe, Spatially-resolved Cathodoluminescence under the Scanning Electron Microscope (SEM-CL), Differential-Thermal Analyses (DTA), Thermogravimetry (TG), Thermoluminescence (TL), Radioluminescence (RL) and High Resolution Spectra Thermoluminescence (3DTL), to gain an overview of the spectral emissions, the defect linkages were modified by heating from room temperature (RT) up to 500 deg. ...

International Nuclear Information System (INIS)

A new generation of transmit-receive single-pass probes, denoted as C6 or X probe, was field tested during the Gentilly II, 2000 steam generator tube inspection. This probe has a performance equivalent to rotating probes and can be used for tubesheet and full-length inspection at an inspection speed equivalent to that of bobbin probes. Existing C3 transmit-receive probes have been demonstrated to be effective in detecting circumferential cracks. The C5 probe can detect both circumferential and axial cracks and volumetric defects but cannot discriminate between them. The C6 probe expands on the capabilities of both probes in a single probe head. It can simultaneously detect and discriminate between circumferential and axial cracks to satisfy different plugging criteria. It has excellent coverage, good defect detectability, and improved sizing and characterization. Probe data is displayed in C-scan format so that the amount of data to be analyzed ...

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The reaction of the retinylidene Schiff base in bacteriorhodopsin (bR) to the water-soluble reagent hydroxylamine is enhanced by greater than 2 orders of magnitude under illumination. We have used this reaction as a probe for changes in Schiff base reactivity during the photocycle of wild-type bR and mutants defective in proton transport. We report here that under illumination at pH 6, the D85N mutant has a 20-fold lower rate and the D212N mutant has a greater than 4-fold higher rate for the light-dependent reaction with hydroxylamine compared with wild-type bR. In contrast, the reactivities of wild-type bR and the D96N and T46V mutants are similar. It has been previously shown that the D96N and T46V replacements have no significant effect on the kinetics of M formation but have dramatic effects on rate of the decay of M. We therefore conclude that the hydroxylamine reaction occurs before formation of the M intermediate. Most likely it occurs ...

International Nuclear Information System (INIS)

The loss of #alpha#-globin gene transcriptional activity rarely occurs as an acquired abnormality during the evolution of myeloproliferative disease or preleukemia. To test whether the mutation responsible for the loss of #alpha#-globin gene expression (hemoglobin H disease) in these patients is linked with the #alpha#-globin genes on chromosome 16, the authors transferred chromosome 16 from preleukemic patients with acquired hemoglobin H disease to mouse erythroleukemia cells and measured the transcriptional activity of the human #alpha#-globin genes. After transfer to mouse erythroleukemia cells, the expression of human #alpha#-globin genes from the peripheral blood or marrow cells of preleukemic patients with acquired hemoglobin H disease was similar to that of human #alpha#-globin genes transferred to mouse erythroleukemia cells from normal donors. These data showed that factor(s) in the mouse erythroleukemia cell can genetically complement the #alpha#-globin ...

International Nuclear Information System (INIS)

Diffusion during He"+, Ne"+, and Xe"+ irradiations of trace amounts of Au in melt-spun amorphous Pd/sub 78/Cu_6Si/sub 16/ has been experimentally investigated. Diffusion constants were measured by following the changes in ion-implanted Au profiles with Rutherford-backscattering spectrometry. Heat treatments and simultaneous irradiations were performed as a function of temperature (533--588 K), ion flux, and ion mass. Total integrated fluences being very small, ion-beam-mixing effects are negligible. More than an order of magnitude enhancement in the diffusion was observed because of irradiations. This enhancement saturates at higher fluxes, the level being independent of ion mass, i.e., independent of collision-cascade parameters. Except at higher temperatures, where the enhancement decreases, the temperature dependence of the diffusion-saturation level is similar to that of the diffusion without irradiation. The data suggest that vacancylike ...

International Nuclear Information System (INIS)

This guide explained the requirements for Off-Road Compression Ignition Engine Emission Regulations established under the Canadian Environmental Protection Act. The regulations are enforced by Environment Canada, which authorizes and monitors the use of the national emissions mark. The regulations prescribe standards for off-road engines that operate as reciprocating, internal combustion engines, other than those that operate under characteristics similar to the Otto combustion cycle and that use a spark plug or other sparking device. The regulations apply to engines that are typically diesel-fuelled and found in construction, mining, farming and forestry machines such as tractors, excavators and log skidders. Four different types of persons are potentially affected by the regulations: Canadian engine manufacturers; distributors of Canadian engines or machines containing Canadian engines; importers of engines or machines for the purpose of sale; and persons not in ...

Energy Technology Data Exchange (ETDEWEB)

Scientists have just taken a big step toward understanding the cause of Lou Gehrig's disease, one of the most devastating nerve degenerative diseases. A large team of researchers, led by Robert Brown Jr. of Harvards's Massachusetts General Hospital and Robert Horvitz, a Howard Hughes Medical Institute investigator at the Massachusetts Institute of Technology, report in the 4 March Nature that they've identified the gene that causes a hereditary form of the condition, which also goes by the name amyothophic lateral sclerosis (ALS). While most ALS cases - approximately 90% - are apparently sporadic' and not caused by an inherited gene defect, all the patients have such similar symptons that researchers are hopeful that what they learn about hereditary ALS will also apply to the sporadic form, possibly leading to new therapeutic strategies that will help both. It's a very important finding,' ...

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Heterochromatin constitutes a significant portion of the genome in higher eukaryotes; approximately 30% in Drosophila and human. Heterochromatin contains a high repeat DNA content and a low density of protein-encoding genes. In contrast, euchromatin is composed mostly of unique sequences and contains the majority of single-copy genes. Genetic and cytological studies demonstrated that heterochromatin exhibits regulatory roles in chromosome organization, centromere function and telomere protection. As an epigenetically regulated structure, heterochromatin formation is not defined by any DNA sequence consensus. Heterochromatin is characterized by its association with nucleosomes containing methylated-lysine 9 of histone H3 (H3K9me), heterochromatin protein 1 (HP1) that binds H3K9me, and Su(var)3-9, which methylates H3K9 and binds HP1. Heterochromatin formation and functions are influenced by HP1, Su(var)3-9, and the RNA interference (RNAi) pathway. My thesis project investigates how ...

Science.gov (United States)

It is suggested that the large reduction of the superconducting transition temperature Tc due to defects observed experimentally in some A-15 compounds is caused by smearing of a high peak in the density of states at the Fermi level. The influence of defects on other physical properties (the magnetic susceptibility ?, the elastic modulus Cs, the structural transformation temperature Tm and the electrical resistivity ?) is also discussed from the same point of view. We expect the anomalous temperature dependence of ?, Cs and ? will be suppressed by defects.

CERN Document Server

We prove the existence of defective secant varieties of three-factor and four-factor Segre-Veronese varieties embedded in certain multi-degree. These defective secant varieties were previously unknown and are of importance in the classification of defective secant varieties of Segre-Veronese varieties with three or more factors.

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In scattering of channeled particles by point defects and in emission of gamma rays in the spontaneous-radiation spectral region conditions are attained where the momentum transferred to the defect is taken up by the crystal as a whole. This leads to coherent and interference effects in the radiation from the crystal defects. When the longitudinal momentum transferred is zero, an induced radiation effect appears in the transitions between the states of transverse motion.

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No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Austenitic 316LN alloy was ion-irradiated using the unique Triple Ion Beam Facility (TIF) at ORNL to investigate radiation damage effects relevant to spallation neutron sources. The TIF was used to simulate significant features of GeV proton irradiation effects in spallation neutron source target materials by producing displacement damage while simultaneously injecting helium and hydrogen at appropriately high gas/dpa ratios. Irradiations were carried out at 80, 200, and 350 C using 3.5 MeV Fe{sup ++}, 360 keV He{sup +}, and 180 keV H{sup +} to accumulate 50 dpa by Fe, 10,000 appm of He, and 50,000 appm of H. Irradiations were also carried out at 200 C in single and dual ion beam modes. The specific ion energies were chosen to maximize the damage and the gas accumulation at a depth of {approximately} 1 {micro}m. Variations in microstructure and hardness of irradiated specimens were studied using transmission electron microscopy (TEM) and a nanoindentation technique, respectively. TEM ...

International Nuclear Information System (INIS)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak ...

International Nuclear Information System (INIS)

A deep band of #left brace#311#right brace# defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the #left brace#311#right brace#-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The #left brace#311#right brace# defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the #left brace#311#right brace#-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion.

International Nuclear Information System (INIS)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...

UK PubMed Central (United Kingdom)

This study was designed to evaluate the suitability of a novel bioabsorbable material in treating bone defects. A poly(desaminotyrosyl-tyrosine-ethyl ester carbonate) (PDTE carbonate) membrane (thickness...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The federating theme of superconductivity has given rise to a number of experimental studies of point defects in solids as different as transition metals (V, Nb, ...), A-15 compounds (V{sub 3}Si, Nb{sub 3}Ge, ...), or perovskite-like copper oxides. Some of these experiments are presented here. (orig.).

Energy Technology Data Exchange (ETDEWEB)

We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, {l_brace}1 1 3{r_brace}s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of {l_brace}1 1 3{r_brace} defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ultra low ...

International Nuclear Information System (INIS)

Most superconductors are quite sensitive to irradiation defects. Critical temperatures may be depressed, critical currents may be increased, by irradiation, but other behaviours may be encountered. In compounds, the sublattice in which defects are created is of significant importance. 24 refs.

International Nuclear Information System (INIS)

This talk sketches out the main parameters (technology, circuit design) that have an influence on the hardening of digital CMOS integrated circuits. For each technology the more common defects are mentioned. General design rules are proposed to prevent or limit those defects. (D.L.). 2 refs., 2 figs.

Science.gov (United States)

This report documents the collaborative effort between the United States and Canada to investigate the impact of process-induced defects on strength and stiffness under static and fatigue loading and for low-cost composite aircraft structures, in particul...

International Nuclear Information System (INIS)

A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two different Si"+ implant conditions have been considered. TEM analysis for the highest energy/dose shows that #left brace#1 1 3#right brace# defects evolve into dislocation loops whilst the defect depth distribution remains unchanged as a function of annealing time. For the lowest energy/dose, #left brace#1 1 3#right brace# defects grow and dissolve while the defect band shrinks preferentially on the surface side. At the same time, extraction of boron transient enhanced diffusion (TED) as a function of depth shows a decrease of the supersaturation towards the surface, starting at the location of the defect band. The study clearly shows that in these systems the silicon surface is the principal sink for ...

UK PubMed Central (United Kingdom)

Different tombusviruses were able to support the replication of either homologous or heterologous defective interfering (DI) RNAs, and those infected plants usually developed typical attenuated symptoms....Full Text Available

International Nuclear Information System (INIS)

It is suggested that the large reduction of the superconducting transition temperature T sub(c) due to defects observed experimentally in some A-15 compounds is caused by smearing of a high peak in the density of states at the Fermi level. The influence of defects on other physical properties (the magnetic susceptibility chi, the elastic modulus C sub(s), the structural transformation temperature T sub(m) and the electrical resistivity rho) is also discussed from the same point of view. We expect the anomalous temperature dependence of chi C sub(s) and rho will be suppressed by defects. (auth.).

Energy Technology Data Exchange (ETDEWEB)

The electronic structure of the clusters (V/sub 3/Si/sub 4/)/sup 12 -/, (Nb/sub 3/Sn/sub 4/)/sup 12 -/(Mo/sub 3/Ge/sub 4/)/sup 15 -/ in crystalline V/sub 3/Si, Nb/sub 3/Sn, Mo/sub 3/Ge compounds is calculated by the Extended Hueckel method. The influence of different types of radiation induced defects on the density of states at the Fermi level (the anti-site defects, the displacement of atoms in linear chains, the vacancy-interstitial type defects) is considered.

International Nuclear Information System (INIS)

This paper describes detection of electro-discharged machine (EDM) defects in magnetic steam generator (SG) tubes of Monju fast breeder reactor (FBR). The EDM defects are located under support plate (SP), on the outer tube surface and they are detected by a remote field eddy current probe. Using the experimental measurements and a multi frequency algorithm, the defect signal can be extracted from the SP signal. The parameters of the multi-frequency algorithm were calculated by comparing SP measurements with two-dimensional finite element simulations (FEM). (author)

DEFF Research Database (Denmark)

Udgivelsesdato: 2007-Feb

International Nuclear Information System (INIS)

This paper describes various eddy current probes, and their performance, which were developed at the Chalk River Laboratories of Atomic Energy of Canada. Included are probes for detecting defects at tubesheet regions in heat exchanger tubes, defects at expansion-transition regions in finned tubes, and defects in ferromagnetic tubes. All of these probes can be used with conventional commercially available instruments. (author).

Energy Technology Data Exchange (ETDEWEB)

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

International Nuclear Information System (INIS)

It is shown that low-frequency elastic vibrations of near-surface planar defects cause high-frequency ultrasonic radiation in surrounding air. The frequency conversion mechanism is concerned with contact nonlinearity of the defect vibrations and provides efficient generation of air-coupled higher-order ultraharmonics, ultrasubharmonics, and combination frequencies. The nonlinear air-coupled ultrasonic emission is applied for location and high-resolution imaging of damage-induced defects in a variety of solid materials.

Science.gov (United States)

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

International Nuclear Information System (INIS)

The defect-induced electron lifetime and energy-gap anisotropy effects on the T/sub c/ of the A-15 compounds are examined. A self-consistent model calculation demonstrates that the various defect dependences of T/sub c/ can be qualitatively understood in terms of the electron-lifetime effect.

DEFF Research Database (Denmark)

We suggest and study designed defects in an otherwise periodic potential modulation of a two-dimensional electron gas as an alternative approach to electron spin based quantum information processing in the solid-state using conventional gate-defined quantum dots. We calculate the band structure and density of states for a periodic potential modulation, referred to as an antidot lattice, and find that localized states appear, when designed defects are introduced in the lattice. Such defect states may form the building blocks for quantum computing in a large antidot lattice, allowing for coherent electron transport between distant defect states in the lattice, and for a tunnel coupling of neighboring defect states with corresponding electrostatically controllable exchange coupling between different electron spins.

Energy Technology Data Exchange (ETDEWEB)

We compare the effect of isotropic point defects vis a vis extended defects on the inter and intra grain properties of superconducting MgB{sub 2} thin films. In a recent paper Gandikota et al. [Appl. Phys. Lett. 86 (2005) 012508] reported that after 200 MeV {alpha} particle irradiation intergrain connectivity remains unaffected. Our results on the contrary indicate that connectivity does depend on irradiation dose and type of ions used. We ascertain that extended defects alter the {sigma} band properties of this two-band superconductor more effectively than the point defects. The improvement in upper critical field and critical current density is intricately related to the type and density of defects created.

International Nuclear Information System (INIS)

Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how #left brace#311#right brace# defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe #left brace#311#right brace# defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of ...

International Nuclear Information System (INIS)

In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a ...

Energy Technology Data Exchange (ETDEWEB)

Due to the improvement of algorithm and the advancement of calculation performance, the imaging by depth migration before stacking is being put into practice from the viewpoint of both calculation cost and accuracy. A lot of imaging examples have been already reported from the survey areas with complicated velocity structures, such as the North Sea and the Gulf of Mexico. Effectiveness of the method has been confirmed. For imaging techniques in Japan National Oil Corporation and Japan Petroleum Exploration Co., Ltd., high-speed depth migration before stacking and high efficiency velocity structure estimation technique have been investigated. This paper describes necessary care to be taken when using depth focusing analysis (DFA) for correcting a velocity model, as an interim stage of case study. The results of depth migration before stacking using dip moveout (DMO) velocity were further inferior to the section obtained by the migration after tracking. Tendency of velocity errors was ...

Energy Technology Data Exchange (ETDEWEB)

The compositions of passive films formed on Fe-17Fr-13Ni (at. %) and Fe-18.5Cr-14Ni-1.5Mo (100) single crystals have been determined and the structure of the alloy under the film has been investigated. The alloys were passivated in 0.05M H{sub 2}SO{sub 4} at 250 mV/SHE for 30 min. The oxygen content was measured by nuclear microanalysis using the {sup 16}O(d,p) {sup 17}O* reaction. The oxygen content in the passive film is similar for the two alloys and equal to (12{plus minus}2) 10{sup 15} O/cm{sup 2}. The cationic compositions of the passive films have been determined by {sup 4}He channeling at two incident beam energies: 0.8 and 2.0 MeV. For the two alloys studied, a total cation content of (5{plus minus}2)10{sup 15} at/cm{sup 2} is found in the passive films. The corresponding thickness is about 12 A. There is an excess of oxygen, which can be attributed to the presence of hydroxyls and sulfate. A strong chromium enrichment is found in the passive film formed ...

Energy Technology Data Exchange (ETDEWEB)

The Chediak-Higashi syndrome (CHS) is a severe autosomal recessive condition, features of which are partial oculocutaneous albinism, increased susceptibility to infections, deficient natural killer cell activity, and the presence of large intracytoplasmic granulations in various cell types. Similar genetic disorders have been described in other species, including the beige mouse. On the basis of the hypothesis that the murine chromosome 13 region containing the beige locus was homologous to human chromosome 1, we have mapped the CHS locus to a 5-cM interval in chromosome segment 1q42.1-q42.2. The highest LOD score was obtained with the marker D1S235 (Z{sub max} = 5.38; {theta} = 0). Haplotype analysis enabled us to establish D1S2680 and D1S163, respectively, as the telomeric and the centromeric flanking markers. Multipoint linkage analysis confirms the localization of the CHS locus in this interval. Three YAC clones were found to cover the entire region in a contig ...

International Nuclear Information System (INIS)

Simulation irradiation experiments were carried out to investigate the formation processes and contribution to hardening of radiation-induced features in low alloy steels. Medium Cu (0.12 and 0.16%) and low Cu (0.03%) A533B steels were irradiated with 3 MeV Ni ions and 5 MeV electrons, and in KUR at 290degC. Irradiated steels were examined by three-dimensional atom probe, positron annihilation, high-resolution transmission electron microscopy and hardness measurements. Electron irradiation caused almost the same hardening as KUR irradiation in medium Cu steels under almost the same dose rate and dose conditions, whereas the formation of larger, denser and more Cu enriched clusters and smaller accumulation of single vacancies were confirmed for KUR irradiation. This indicated that cascade damage provides additional cluster nucleation sites to compensate for lower free point defect production. High dose rate Ni ion irradiation produced Mn-Ni-Si clusters and ...

Energy Technology Data Exchange (ETDEWEB)

A detailed investigation of the damage formation and evolution in ion-implanted crystalline Si is presented. Deep-level transient spectroscopy has been used to monitor room temperature migration of point defect complexes and evolution from simple point-like defect complexes to defect clusters and even extended defects. Si samples were implanted with Si or He ions with energies of 145 keV-3MeV, to fluences in the range 5x10[sup 8]-5x10[sup 13]cm[sup -2]. The effects of thermal annealing, in the range 100-680 C and 10 min-15h, were also explored. A systematic comparison of defect complexes formation and evolution in ion-implanted or electron-irradiated Si samples with a different impurity content were used to assess the role of impurities (C and O), extra implanted ion and defect clustering on the nature and thermal stability of residual damage. In particular, an ...

Energy Technology Data Exchange (ETDEWEB)

A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration ...

Energy Technology Data Exchange (ETDEWEB)

(001) CZ silicon wafers were implanted with arsenic (As{sup +}) at energies of 10--50 keV to doses of 2 {times} 10{sup 14} to 5 {times} 10{sup 15}/cm{sup 2}. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including ...

Energy Technology Data Exchange (ETDEWEB)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak ...

International Nuclear Information System (INIS)

At the importance increase of UT (ultrasonic testing) with the application of rules on fitness-for-service for nuclear power plants, JAPEIC (Japan power engineering and inspection corporation) started education training for defect detection and sizing technique. Weld joints specimen with EDM (Electro-Discharged Machining) notches, fatigue cracks and intergranular stress corrosion cracks were tested and practiced repeatedly based on a modified ultrasonic method and the defect size measuring accuracy of the trainees was surely improved. Results of the blind test confirmed effectiveness of education training. (T. Tanaka)

CERN Document Server

In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Environmental Research Database

ObjectivesObjectives Not AvailableDescriptionTo determine the effects of water penetration on the burst strength of filament wound composite pipes which have been damaged by impact and then subjected to long term pressurisation with sea water. ~%~ To monitor and characterise the damage and effects of sea water penetration using ultrasonic NDT. To determine the burst strength of bonded composite pipe joints with and without defects and to see whether the defects can be detected using ultrasonic NDT. [continued...

Energy Technology Data Exchange (ETDEWEB)

This study presents results from Monte Carlo radiation transport calculations aimed at characterizing a novel methodology being developed to detect partial defects in Pressurized Water Reactor (PWR) spent fuel assemblies (SFAs). The methodology uses a combination of measured neutron and gamma fields inside a spent fuel assembly in an in-situ condition where no movement of the fuel assembly is required. Previous studies performed on single isolated assemblies resulted in a unique base signature that would change when some of the fuel in the assembly is replaced with dummy fuel. These studies indicate that this signature is still valid in the in-situ condition enhancing the prospect of building a practical tool, Partial Defect Detector (PDET), which can be used in the field for partial defect detection.

International Nuclear Information System (INIS)

Defect cluster formation in 14-MeV neutron irradiated polycrystalline copper has been observed by transmission electron microscopy (TEM) and correlated with the increase in yield stress. The measurements indicate that the radiation hardening component of the yield strength in polycrystals is not directly additive to the unirradiated yield strength. A transitional behavior was observed for radiation hardening at low fluences, which produces an anomalous variation of the defect cluster barrier strength with fluence. The behavior is attributed to the effect of grain boundaries on slip band transmission. An upper limit for the room temperature barrier strength of defect clusters in neutron-irradiated copper was determined to be #alpha#=0.23. (orig.).

British Library Electronic Table of Contents (United Kingdom)

This paper introduces the application of independent component analysis mixture modelling (ICAMM) in non-destructive testing (NDT). The application consists of discriminating patterns for material quality control from homogeneous and defective materials inspected by impact-echo testing. This problem is modelled as a mixture of independent component analysis (ICA) models, representing a class of defective or homogeneous material by an ICA model whose parameters are learned from the impact-echo signal spectrum. These parameters define a kind of particular signature for the different defects. The proposed procedure is intended to exploit to the maximum the information obtained with the cost efficiency of only a single impact. To illustrate this capability, four levels of classification detail...

UK PubMed Central (United Kingdom)

The tetrapeptide KDEL is commonly found at the C terminus of soluble proteins of the endoplasmic reticulum (ER), and it contributes to their localization by interacting with a receptor that recycles...Full Text Available

Science.gov (United States)

Giant magnetoresistance (GMR) has been used with Eddy current testing to detect small defects not only in thin film structures but also in multilayered metallic structures. This work detected small scratches in the thin film under the surface where these defects were unable to be inspected or monitored by regular testing. In addition, rotational GMR magnetic sensor based Eddy current probes were used for detecting buried corner cracks at the edge of holes in metallic structures. The results of this study proved that giant magnetoresistance is very powerful and effective to sense the magnetic field, which is the result from the perturbation of the Eddy currents caused by a defect. This method can be used for quality control of metallization layers on silicon wafer and to detect cracks in thick structures such as cracks in aging aircraft.

UK PubMed Central (United Kingdom)

Mutation of the gene drop-dead (drd) causes adult Drosophila to die within 2 weeks of eclosion and is associated with reduced rates of defecation...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

To study the defect creation induced by electronic processes in refractory oxides, MgO single crystals were irradiated with high energy tin, uranium and lead ions. Optical absorption measurements showed that F-type centers (oxygen vacancies with trapped electrons) were created during irradiation. The total number of centers per unit area of bombarded sample increases linearly with irradiating fluence. The main part of the point defects was found to arise from electronic processes. The concentration of F-type centers induced by ionization increases with the electronic energy losses. Assuming a saturation of point defect concentration at high fluences, F-type center creation cross sections could be estimated. The influence of irradiation temperature and of the velocity of the bombarding ions are discussed.

Science.gov (United States)

... company. To automate this initial cutup requires a computer vision system that can locate and identify surface defects ... ...

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

International Nuclear Information System (INIS)

Interest to thin film of metals' silicides first of all is conditioned intrinsic al them unique physical properties. On their basis of it is possible to produce extremely sophisticated devices of solid-state electronics, production which needs the controlled change of physics, chemical and electrical properties with high-level of accuracy. On the present time most are in detail investigated composition, structure and properties of three-dimensional samples of metals' silicides. In the last years the intensive are led to researches in the direction of creation and study of physical-chemical properties thin (500-1000 Angstroms) and ultrafine (100-120 Angstroms) films silicides. It has information about composition, morphology of surface and emission of properties of thin film of silicides of barium, of cobalt and of palladium, was obtained in conditions of ultra-high vacuum. Low energy ion implantation and further annealing on composition, electronic and crystalline structure of Si ...

UK PubMed Central (United Kingdom)

Vibrio cholerae 638 (El Tor, Ogawa), a new CTXΦ-negative hemagglutinin/protease-defective strain that is a cholera vaccine candidate, was examined for safety and immunogenicity...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

International Nuclear Information System (INIS)

The exafs method is proposed as a more informative, universal one to investigate the radiation defects in solids. The successful results as obtained by the author using the synchrotron radiation source are reported for the first time. The measurements were carried out in GaAsP crystals irradiated with 50 MeV electrons.

CERN Document Server

We derive the expression for spontaneous emission rate in finite one-dimensional photonic crystal with arbitrary defects using the effective resonator model to describe electromagnetic field distributions in the structure. We obtain explicit formulas for contributions of different types of modes, i.e. radiation, substrate and guided modes. Formal calculations are illustrated with a few numerical examples, which demonstrate that the application of effective resonator model simplifies interpretation of results.

UK PubMed Central (United Kingdom)

The bioenergetic capacity of skeletal muscle in a 17-year-old patient with a severe defect in complex III of the electron transport chain has been examined by 31P NMR measurements of the molar ratio...Full Text Available

International Nuclear Information System (INIS)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational ...

Energy Technology Data Exchange (ETDEWEB)

It is argued that colloidal fractals are self-similar because all computed fractal dimensions of a given fractal have the same value. However, in a mathematical sense the self-similar character of a set implies not only that all fractal dimensions agree in value but also the existence of a set of similarities that generates the fractal. In this paper we report some results from two-dimensional aggregation experiments at the air-liquid interface and show that, with the appropriate selection for the similarities, the colloidal fractal aggregates can be considered as self-similar in a more mathematically rigorous form. (author)

Energy Technology Data Exchange (ETDEWEB)

Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several ...

International Nuclear Information System (INIS)

In the present paper we estimate the effect of sodium in the in-service inspection of non-magnetic steam generators tubes using eddy current technique and eddy current probes based on a differential double bobbin coil configuration. Experimental measurements of defects signals in steam generator tubes of fast breeder reactor are compared with simulations results of a two-dimensional axisymmetric finite element code to validate a reliable electromagnetic model of the system (eddy current coils, steam generator tube, defect) when there is no sodium on the outer steam generator tube surface. The electromagnetic code is used to evaluate the sodium band and sodium layer signals when a defect is located under steam generator support plate. Using a multi-frequency algorithm, its parameters are determined in the 'no sodium condition' (there is no sodium on the outer steam generator tube surface), defects signal ...

International Nuclear Information System (INIS)

The optical, electromagnetic and mechanical properties of thin films (TFs) are directly correlated to their morphology at the nanoscale. This, in concert with the fact that new deposition techniques are enabling the growth of thin films with very complex morphologies, there is an increasing interest in model-based simulation (MBS) for the design of engineering structures (including nanostructures), and increasing computer speeds are beginning to make MBS an effective design tool capable of bridging the nanoscale with the continuum scale, has made it increasingly important to understand how the nanostructure of a thin film impacts its properties at all length scales. The authors have developed the capability to determine the mechanical properties of thin films with amorphous nanostructure by combining molecular dynamics, i.e., position of particles (e.g., atoms or molecules) and their interatomic potential(s), with continuum mechanics principles. This work concerns the application of ...

Energy Technology Data Exchange (ETDEWEB)

The purpose of the present work is to investigate the effects of matrix resin and fiber content on the behavior of fatigue crack propagation in continuous-glass-fiber-mat reinforced CP-resin composites. For this purpose, ductile matrix resin and brittle one are used. These two kinds of resins have the characteristic that the elastic modulus and tensile strength are nearly the same with each other while the elongation is different. The composite specimens are made of these resins and continuous grass fiber mat of 20 wt.% and 60 wt% fiber contents. The fatigue crack propagation test was conducted by using the tapered DCB specimens to control the stress intensity factor range, {delta}K, during the test. The results obtained are as follows; (1) The relation between the crack propagation rate, da/dN, and {delta}K for all the present materials is shown by a straight line in logarithmic representation. (2) For the composites of 20 wt.% fiber content, the da/dN of the ductile matrix composite ...

British Library Electronic Table of Contents (United Kingdom)

Ventricular septal defects can occur as part of other congenital cardiac malformations or as an isolated finding. Aneurysms of the sinus of Valsalva are rare, most commonly involving the right or noncoronary sinuses. They can be congenital or acquired through infection, trauma, or degenerative diseases. They frequently co-exist with ventricular septal defects, aortic valve dysfunction, or other cardiac abnormalities. More commonly, sinus of Valsalva aneurysms are diagnosed after the clinical sequelae of rupture. Several etiologic factors may lead to the development of pathologic pericardial effusion and the detection of pericardial effusion was one of the first applications of echocardiography to gain widespread acceptance. We present a case of a chance finding of an aneurysm of the right ...

British Library Electronic Table of Contents (United Kingdom)

We have developed a chitosan/polyglycolic acid (PGA) artificial nerve graft which was previously used for bridge implantation of dog sciatic nerves across 30-mm long defects. Here we describe a clinical trial of this graft for repairing a 35-mm-long median nerve defect at elbow of a human patient. During the 3-year follow-up period, functional recovery of the injured median nerve was assessed by pinch gauge test, hydraulic hand dynamometry, static two-point discrimination and touch test with monofilaments, in couple with electrophysiological examinations. The motor and sensory function of the median nerve demonstrated an ongoing recovery postimplantation, reaching M4 and S3+ levels during the follow-up period. The results indicate that the chitosan/PGA artificial nerve graft could be used ...

International Nuclear Information System (INIS)

With steam generator check testing, the numerous types of defect not only have to be detected reliably but also to be identified correctly and classified according to depth. A priori, no signals are provided by the physical eddy-current mechanism, i.e. the disturbance of an excited eddy-current field by a defect, which will allow unambiguous identification and classification of the defects. The task, therefore, consists in designing the eddy-current method in terms of measurement technology in such a way as to obtain useful detection, identification and classification by a translation of the signals as simple and as save as possible. Internal through-flow wils and internal rotating probes were examined for their suitability to fulfill this three-pronged task with steam generator inspection. (orig./RW).

International Nuclear Information System (INIS)

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

Energy Technology Data Exchange (ETDEWEB)

The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.

International Nuclear Information System (INIS)

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

International Nuclear Information System (INIS)

Computer experiments imitating specimen strain on tension with constant deformation rate have been carried out. A formation possibility of atmosphere from defects around gliding dislocations (I) and a work of Frank-Read sources (II) have been accounted for. In result deformation curves until stresses do not exceed a critical shear stress were calculated. Influence of effects (I) and (II) was analyzed. It is determined that both by pass of dislocations over defect ''atmospheres'' and dislocation multiplication can cause a peak in flow stress occurrence on the deformation curves. Reasons and conditions of such peak occurrence have been studied. 12 refs.; 9 figs. (author).

CERN Document Server

Two-dimensional simulations of the coarsening process of the isotropic/smectic-A phase transition are presented using a high-order Landau-de Gennes type free energy model. Defect annihilation laws for smectic disclinations, elementary dislocations, and total dislocation content are determined. The computed evolution of the orientational correlation length and disclination density is found to be in agreement with previous experimental observations showing that disclination interactions dominate the coarsening process. The mechanism of smectic disclination movement, limited by the absorption and emission of elementary dislocations, is found to be facilitated by curvature walls connecting interacting disclinations. At intermediate times in the coarsening process, split-core dislocation formation and interactions displaying an effective disclination quadrupole configuration are observed. This work provides the framework for further understanding of the formation and ...

British Library Electronic Table of Contents (United Kingdom)

Sinus lifting and reconstruction of localized alveolar defects are often required after closure of a large oroantral fistula (OAF) to allow for subsequent implant installation. This study describes a combined surgical technique that involves sinus lifting, bony closure, and reconstruction of the alveolar defect at the site of an OAF. The sinus membrane was reconstructed as a continuous layer by combining the residual sinus membrane with a rotated part of oral mucosa around the OAF. Autogenous bone from the chin and/or ramus was grafted into the prepared sinus space and alveolar defect, and the graft was covered by a buccal advancement flap. This technique was used to treat 8 patients who had large OAFs in the posterior maxillary region. The treatment was successful in all cases, and the te...

UK PubMed Central (United Kingdom)

Atypical hemolytic uremic syndrome (aHUS) is a heterogeneous disease that is caused by defective complement regulation in over 50% of cases. Mutations have been identified in genes encoding both complement...Full Text Available

International Nuclear Information System (INIS)

Generally, neutron, ion and electron Irradiations cause a substantial amount of hardening and significantly alter the deformation behavior of metals and alloys at relatively low irradiation temperatures. A radiation hardening is caused by the formation of microstructural defects such as dislocation loops, voids and precipitates under irradiation. Therefore, it is important to have a better knowledge of the irradiation induced microstructural defects under irradiation condition. As a part of the National mid- and long-term atomic energy R and D program, we are dealing with the radiation hardening behavior in Fe-Cr binary alloy. Fe-Cr binary alloy is a base alloy of Ferritic/Martensitic steel(F/M steel) planning to use for the Gen IV nuclear system. In this work, we investigated the radiation hardening and microstructural defect evolution in ion irradiated Fe-Cr alloys with irradiation temperature using nano-indentation ...

UK PubMed Central (United Kingdom)

Monogenic autoinflammatory diseases encompass a distinct and growing clinical entity of multisystem inflammatory diseases with known genetic defects in the innate immune system. The diseases...Full Text Available

UK PubMed Central (United Kingdom)

The Arabidopsis ref2 mutant was identified in a screen for plants having altered fluorescence under UV light. Characterization of the ref2 mutants showed that they...Full Text Available

UK PubMed Central (United Kingdom)

Patients with Alport syndrome progressively lose renal function as a result of defective type IV collagen in their glomerular basement membrane. In mice lacking the α3 chain of type IV collagen...Full Text Available

UK PubMed Central (United Kingdom)

We have recently reported that progeroid Zmpste24^−/− mice, which exhibit multiple defects that phenocopy Hutchinson-Gilford progeria syndrome, show a profound dysregulation...Full Text Available

UK PubMed Central (United Kingdom)

Prenatal cocaine exposure produces sustained neurobehavioral and brain synaptic changes closely resembling those of animals with defective alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionic...Full Text Available

UK PubMed Central (United Kingdom)

Osterix (Osx) is a zinc-finger-containing transcription factor that is expressed in osteoblasts of all endochondral and membranous bones. In Osx null ...Full Text Available

UK PubMed Central (United Kingdom)

Muscular dystrophies (MDs) comprise a group of degenerative muscle disorders characterized by progressive muscle wasting and often premature death. The primary defect common to most MDs involves disruption...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms ...

Energy Technology Data Exchange (ETDEWEB)

Geometrically anisotropic eddy current probes are a type of separate function probes especially fit to the detection of defects showing a preferential direction. This kind of flaw induces a coupling between the transmitter and the receiver by guiding eddy currents from the one to the other. On the other hand, this coupling will be almost non-existent in the presence of defects or spurious effects not displaying this geometrical particularity. Basic studies on an elementary two-coil set-up allow the acknowledgment of the intrinsic qualities of such probes: good signal-to-noise ratio, influence field practically constant on the whole defect length, ability to detect bridged defects, insensitivity to lift off. These results can be improved by achieving multicoils probes adapted to different kinds of problems. An application to continuous casting slabs testing yields very interesting results in the ...

International Nuclear Information System (INIS)

A brief review is given of the nature of lattice instabilities in high-T/sub c/ superconductors. The Frohlich instability in A-15 compounds is indicated to be a microdomain which acts as an embryo for the Martensitic transformations in these compounds.

Science.gov (United States)

The goal of this study was to evaluate topics used to troubleshoot circuit boards with known or suspected thermally intermittent components. Failure modes for thermally intermittent components are typically mechanical defects, such as cracks in solder paths or joints, or broken b...

UK PubMed Central (United Kingdom)

In rats, damage to neuronal populations in some brain regions occurs in response to neonatal alcohol exposure coinciding with the period of rapid brain growth. These alcohol-induced defects...Full Text Available

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

UK PubMed Central (United Kingdom)

Carney-Stratakis syndrome, an inherited condition predisposing affected individuals to gastrointestinal stromal tumor (GIST) and paraganglioma, is caused by germline mutations in succinate dehydrogenase...Full Text Available

UK PubMed Central (United Kingdom)

Epidemiological data indicate that children conceived in vitro have a greater relative risk of low birth-weight, major and minor birth defects, and rare disorders involving imprinted...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Cracking resistance and metal damage are considered in relation to structural state for steam-pipe fittings during use. An approximate scheme is given for estimating the maximum permissible operating time in the plastic state in relation to the depth of an observed crack-type defect.

UK PubMed Central (United Kingdom)

Congenital woolly hair is a disorder with structural defects of the hair shafts. Curled hairs are noticed at birth or soon after birth and often improve with age. Some cases of woolly hairs are associated...Full Text Available

UK PubMed Central (United Kingdom)

The use of cementless threaded cups in THA is a well-established treatment. Fractures of the cups are rare complications recorded in individual cases with material defects being discussed as the primary...Full Text Available

UK PubMed Central (United Kingdom)

The abnormal megakaryocytopoiesis associated with idiopathic myelofibrosis (IM) plays a role in its pathogenesis. Because mice with defective expression of transcription factor GATA-1 (GATA-1^low...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

CERN Document Server

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\\em in situ}. Possible mechanisms of formation are discussed.

Energy Technology Data Exchange (ETDEWEB)

Several possibilities of the use of molecular models in quantum-chemical investigations of the structure of defect centers on the surfaces of oxides on nontransition elements have been illustrated. There has been a special discussion of the assumption of the local nature of the chemical interactions in these systems, which underlies such an approach, and of the consequent laws governing the formation of their lattices in the example cases of zeolites, kaolinites, and comparable boron- and aluminum-containing oxides. A quantum-chemical interpretation of the body of experimental data from investigations of the dehydroxylation of H forms of zeolites has been given. The structure of the Lewis acid centers formed as a result, and their chemisorption properties, have been discussed.

Energy Technology Data Exchange (ETDEWEB)

This study deals with the application of wavelet analysis to detection and characterization of defects from eddy-current and ultrasonic testing signals of a low signal-to-noise ratio. Presented in this paper are the methods for processing eddy-current testing signals of heat exchanger tubes of a steam generator in a nuclear power plant. The results of processing eddy-current testing signals of tube test pieces with artificial flaws show that the flaw signals corrupted by noise and/or non-defect signals can be effectively detected and characterized by using the wavelet methods. (author)

International Nuclear Information System (INIS)

To evaluate the radiological patterns of vascular invasion in peripheral cholangiocarcinomas. Hepatic arteriography and portography in 20 cases with cholangiocarcinoma including 12 cases with angiographic CT were retrospectively analyzed. The arteriography showed no arterioportal shunt, hypertrophy of tumor vessel, or tumor staining extending to central portion of the mass in all cases. However, doughnut shaped peripheral tumor staining was seen until late hepatogram phase in 12 cases and compensatory hyperperfusion around the mass was seen in six cases (eight cases if include arterial CT). Encasement of tumor vessel was seen in 12 cases, and hypertrophy of feeding vessel in nine cases. On portography, the filling defect on segmental portal branch could be demonstrated only in 11 cases. Shape of the portal defect was tapered narrowing in six cases, abrupt narrowing in two cases but intraluminal nodular filling defect was ...

Energy Technology Data Exchange (ETDEWEB)

The evaluation of possible manufacture-based defects in turbine shafts and housings for component serviceability relevance is of particular interest not only in post-manufacturing NDT but also in evaluation of NDT results obtained by in-service inspections of components with long service lives. The results discussed in the paper are summarized as follows: Most of the examined natural defects in the forgings and castings behave like cracks under the simulated operating conditions and hence may well be evaluated by fracture mechanical methods for their serviceability relevance determined by crack propagation under fatigue, creep and creep-fatigue stress. The empirical correlation of true defect size and US testing results (echo signal, echodynamics, attenuation) permits improved determination of true defect sizes in the turbine components. Care has to be taken to select the proper testing and evaluation ...

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial ...

International Nuclear Information System (INIS)

A set of advanced models implemented into the simulator Sentaurus Process was applied to simulate ultra shallow junction formation by flash lamp annealing (FLA). The full path transient enhanced diffusion model includes equations for small interstitial clusters (I_2, I_3, I_4), #left brace#3 1 1#right brace# defects and dislocation loops. A dopant-point defect clustering model is used for dopant activation simulation. Several cluster types are considered: B_2, B_2I, B_2I_2, B_3I, B_3I_2, B_3I_3 for boron and As_2, As_2V, As_3, As_3V, As_4, As_4V for arsenic. Different point defect and dopant-point defect pair charge states are taken into account to obtain accurate results in the high doping level region. The flux expressions in the three-phase segregation model include a dependence on the doping level and point defect supersaturation. The FLA process was performed at various peak ...

UK PubMed Central (United Kingdom)

It has been predicted that geometrically similar animals would swim at the same speed with stroke frequency scaling with mass^−1/3. In the present study, morphological and behavioural...Full Text Available

Science.gov (United States)

... This pinhole process may be similar to the formation of an oxide layer in aluminum electrolytic capacitors immersed in a borax solution. ...

Science.gov (United States)

runs are necessary, provision shall be made for expansion joints, motion of the units, or similar compensation to ensure that no excessive strains are ...

Science.gov (United States)

This study evaluated whether differences in design of 3-dimensional polylactic acid barriers (EPi-Guide and Guidor) would influence hard tissue results in the treatment of Grade II furcations in humans. A multicenter study was conducted, using 40 patients with moderate to advanced bilateral chronic adult periodontitis of the mandibular first or second molars. After flap access, debridement, and root preparation, surgical bone level measurements were taken and membranes were placed on a random basis. Surgical reentry occurred at 1 year. Data collected from all 3 investigative centers were pooled and analyzed using an analysis of variance appropriate for a counterbalancing design. Both barrier materials resulted in significant gains of attachment level and defect reduction. The composite reduction in the vertical component of the osseous defects was greater in the sites treated with Epi-Guide as compared to those treated with Guidor; the ...

Energy Technology Data Exchange (ETDEWEB)

Replication-defective vectors derived from reticuloendotheliosis virus were used to transduce exogenous genes into early somatic stem cells of the chicken embryo. One of these vectors transduced and expressed the chicken growth hormone coding sequence. The helper cell line, C3, was used to generate stocks of vector containing about 10/sup 4/ transducing units per ml. Injection of 5- to 20-..mu..l volumes of vector directly beneath the blastoderm of unincubated chicken embryos led to infection of somatic stem cells. Infected embryos and adults contained unrearranged integrated proviral DNAs. Embryos expressed the transduced chicken growth hormone gene and contained high levels of serum growth hormone. Blood, brain, muscle, testis, and semen contained from individuals injected as embryos contained vector DNA. Replication-defective vectors of the reticuloendotheliosis virus transduced exogenous genes into chicken embryonic stem cells in vivo.

Energy Technology Data Exchange (ETDEWEB)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of ...

Energy Technology Data Exchange (ETDEWEB)

Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P{sup +}N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P{sup +}N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically active. These results ...

Energy Technology Data Exchange (ETDEWEB)

General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional ...

International Nuclear Information System (INIS)

The rate of residual-resistivity increase and the isochronal recovery have been studied on the fcc metals Al, Ni, Cu, Pd, Ag, Pt, and Au irradiated at 4.6 K with reactor neutrons to a dose of about 10"1"9 (fast neutrons)/cm"2. The rate of resistivity increase is nonlinear as a function of irradiation-induced resistivity; computer analysis shows that the data are best fitted with an erxpression having up to third-order terms in #DELTA#rho. There are deviations from simple damage-rate theory in all cases, but an anomalous negative deviation from a linear law (convex curvature) is observed in Ni, Pd, Pt (and Fe). This behavior is most probably caused by a decrease of the specific Frenkel-defect resistivity due to defect clustering, an effect which should contribute in all metals after fast-neutron irradiation to high doses. Saturation values of resistivity and defect concentration as well as recombination volumes have veen ...

International Nuclear Information System (INIS)

Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785degC up to a fluence of 5.2 x 10"2"4 n/m"2. The hardness was increased by up to 51% in AlN and 84% in SiC. The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200 #approx# 1,400degC annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400degC annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops is not grounds for ...

International Nuclear Information System (INIS)

The downstream failure of cable during winding, insulating, coil winding, and coil assembly is a significant issue in magnet production. The impact of these failures is costly both financially and because of the time needed to recover from them. The current approach to cabling has been to visually inspect the cable for any gross defects during cabling. To date this has been effective in finding small defects such as crossovers, which drastically reduce the mechanical integrity of the strand and thus of the cable itself. But because of the large volume of cable that will be manufactured, an automated flaw detection system that can inspect the cable and detect these types of defects will be needed. We have recently done an on-line experiment using an Eddy current system and specialized Eddy current probes to inspect cable during manufacturing. We will present the results of our inspection, demonstrating detection of ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during ...

Energy Technology Data Exchange (ETDEWEB)

Purpose: To describe the clinical aspects and evaluate optical coherence tomography of macular microholes. Methods: Seven patients were assessed (8 eyes) with microholes of the macula. All patients underwent complete eye examination, fundus photography, fluorescent angiography and OCT-3 imaging. Results: Ages ranged from 26 to 69 years. Six patients were female (85.7%) and five of them had microhole in the right eye. The presenting symptom was decrease in visual acuity (71.3%) and central scotoma in (14.3%). Five eyes (71.4%) had no defects shown by fluorescent angiography. A defect in the outer retina was demonstrated in all eyes on optical coherence tomography. The lesions were nonprogressive. Conclusion: Macular microholes are small lamellar defects in the outer retina. The condition is nonprogressive, generally unilateral and compatible with good visual acuity. Fundus biomicroscopy associated with an optical coherence ...

Energy Technology Data Exchange (ETDEWEB)

A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. ...

Energy Technology Data Exchange (ETDEWEB)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the ...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of As-implanted Si. The relations of the enhanced diffusion to residual defects and lattice restoration have been studied in detail. The As concentration profiles and residual defects are measured. It is found from the data that the lattice has been restored when the implanted sample is annealed at 1150 deg C (or 1050 deg C) for 1s. The defect density decreases rapidly with increase of annealing time (from 1 to 12s). The enhanced diffusion coefficient maximum appears in the annealing time ranging from 1 to 5s. Allmost a 'complete' annealing of displacemet damage is obtained and the diffusion coefficient is less than that in above-mentioned conditions when the implanted samples are annealed at 1150 deg C in the time ranging from 12 to 20s. the mechanism of lattice restoration and enhanced diffusion in annealing process have been ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

International Nuclear Information System (INIS)

The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

British Library Electronic Table of Contents (United Kingdom)

Irradiation of EP-823 (16Cr12MoWsiVNbB) ferritic-martensitic steel with 7-MeV Ni++ ions and with 30- and 70-keV He+ ions at a temperature of 500?C was followed by an increase in the microhardness, which was due to both radiation point defects and changes in the phase composition and the dislocation structure of the steel. It was found that the dependence of the largest relative increase in the microhardness on the concentration of radiation-induced point defects in the near-surface region of the steel under irradiation with different ions correlated with an analogous dependence of the surface segregation of silicon and chromium.

British Library Electronic Table of Contents (United Kingdom)

Design rules for robustness require insensitivity to local failure and the prevention of progressive collapse. This is often verified by applying the load case ''removal of a limited part of the structure''. This paper will evaluate typical structural systems for large-span timber roof structures against these requirements, comparing the results against typical reasons for damages and failures. Applying the finding that most failures of timber structures are not caused by random occurrences or local defects, but by global (repetitive) defects (e.g. from systematic mistakes), it is shown that the objective of load transfer-often mentioned as preferable-should be critically analysed for such structures. Based on these findings, proposals for structural systems and details towards a robust de...

British Library Electronic Table of Contents (United Kingdom)

PurposeTo evaluate pathologic features of the photoreceptors in myopic foveoschisis with the Fourier-domain optical coherence tomography (FD-OCT).DesignObservational case series.MethodsSeventeen eyes of 15 patients with myopic foveoschisis (foveal detachment type, six eyes; foveoschisis type, 11 eyes) were included. We observed the photoreceptor inner and outer segments (IS/OS) and evaluated the morphologic status using FD-OCT. Fundus photographs and time-domain OCT (TD-OCT) images also were obtained.ResultsIS/OS defects, which are uncommon in retinal detachments in eyes with myopia, were seen clearly in five eyes (three eyes [50%] with the foveal detachment type; two eyes [18%] with the foveal schisis type). Fundus photographs showed myopic chorioretinal atrophy in eight study eyes (47%),...

International Nuclear Information System (INIS)

We report the fabrication of p"+/n junctions using Ge"+, C"+, and B"+ co-implantation and a spike anneal. The best junction exhibits a depth of 26 nm, vertical abruptness of 3 nm/decade, and sheet resistance of 520 Ohm/square. The junction location is defined by where the boron concentration drops to 10"1"8 cm"-"3. These junctions are close to the International Technology Roadmap specifications for the 65 nm technology node and are achieved by careful engineering of amorphization, stresses, and point defects. Advanced simulation of boron diffusion is used to understand and optimize the process window. The simulations show that the optimum process completely suppresses the transient-enhanced diffusion of boron and the formation of boron-interstitial clusters. This increases the boron solubility to 20% above the equilibrium solid-state solubility.

International Nuclear Information System (INIS)

The paper studies the effect of crystal structure of LiNbO_3 monocrystals on NMR spectra of "7 Li and "9"3 Nb. Models of defect structure are analyzed via comparison of NMR experimental spectra and gradients of electrical field predicted on the basis of the calculations on "7 Li and "9"3 Nb nuclei using the relevant model. It is shown that no one of the main models of lithium niobate defect structure explains the peculiarities of NMR spectra. Conclusions are made about the independence of the reasons of occurrence of NMR additions lines "7 Li and "9"3 Nb, as well as, about links of "9"3 Nb NMR weak additional lines with the ranges of a different crystalline phase that may form while growing. 18 refs., 2 figs., 3 tabs.

International Nuclear Information System (INIS)

Lifetime of minority charae carriers in the Si and Ge p-n unctions has been measured by pulse method of conductivity modulation of base. Its dependence on the X-ray radiation dose has been investigated. Dependence of current transmission coefficients on the dose has been measured and their sharp decrease at low doses and the following saturation at high doses have been observed. Linear dependence of lifetime on X-ray radiation dose has been obtained. Resulting from the comparison of regularities of the change of lifetime due to current characteristics, it has been shown that X-ray radiation leads to the formation of the surface defects, influencing the change of current characteristics as well as to stationary structural defects, causing the decrease of lifetime of the charge carriers with the increase of X-ray radiation dose.

Energy Technology Data Exchange (ETDEWEB)

As a general approach to the problem of precursive behavior in alloys that undergo a displacive transformation, defect theories are becoming increasingly popular. However, the microscopic origin of the proposed defects is usually not considered. Yu and Anderson (1984) have argued that properties of strong-coupling superconductors, such as the A-15 compounds, imply a breakdown of Migdal's theorem (the adiabatic, or Born-Oppenheimer approximation for separation of electrons and phonons) in these systems. The electron-phonon coupling is so strong that it must be incorporated already in zeroth order. This is the basis for local phonon models, in which the electron-phonon coupling provides an effective double well potential for a localized group of atoms. The Yu-Anderson model and an analogous local Jahn-Teller model (Abell, 1983) are reviewed in connection with displacive transformations in strong-coupling alloys.

Energy Technology Data Exchange (ETDEWEB)

This research deals with in the study of the use of innovating magnetic sensors in eddy current non destructive inspection. The author reports an analysis survey of magnetic sensor performances. This survey enables the selection of magnetic sensor technologies used in non destructive inspection. He presents the state-of-the-art of eddy current probes exploiting the qualities of innovating magnetic sensors, and describes the methods enabling the use of these magnetic sensors in non destructive testing. Two main applications of innovating magnetic sensors are identified: the detection of very small defects by means of magneto-resistive sensors, and the detection of deep defects by means of giant magneto-impedances. Based on the use of modelling, optimization, signal processing tools, probes are manufactured for these both applications.

International Nuclear Information System (INIS)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

British Library Electronic Table of Contents (United Kingdom)

Abstract: We have performed petrographic and spectroscopic studies of brown diamonds from an eclogite xenolith from the Udachnaya pipe (Yakutia, Russia). Brown diamonds are randomly intermixed with colorless ones in the rock and often located at the grain boundaries of clinopyroxene and garnet. Brown diamonds can be characterized by a set of defects (H4, N2D and a line at 490.7nm) which are absent in colorless diamonds. This set of defects is typical for plastically deformed diamonds and indicates that diamonds were likely annealed for a relatively short period after deformation had occurred. Excitation of brown colored zones with a 632.8nm He-Ne laser produced the typical diamond band plus two additional bands at 1730cm^-^1 and 3350cm^-^1. These spectral features are not genuine Raman ban...

CERN Document Server

We survey a new area of parameter-free similarity distance measures useful in data-mining, pattern recognition, learning and automatic semantics extraction. Given a family of distances on a set of objects, a distance is universal up to a certain precision for that family if it minorizes every distance in the family between every two objects in the set, up to the stated precision (we do not require the universal distance to be an element of the family). We consider similarity distances for two types of objects: literal objects that as such contain all of their meaning, like genomes or books, and names for objects. meaning, like genomes or books, and names for objects. The latter may have literal embodyments like the first type, but may also be abstract like ``red'' or ``christianity.'' For the first type we consider a family of computable distance measures corresponding to parameters expressing similarity according to ...

International Nuclear Information System (INIS)

Eddy current testing (ECT) method is widely used as the non-destructive evaluation (NDE) of the various kinds of material degradation occurring in nuclear power plants (NPPs) components including steam generator (SG) tubes. Detection of any defects or flaws in the steam generator tubes in the early stage is very important in maintenance of NPP for its primary role as the pressure boundary with thin wall thickness. Although the ECT technique provides lots of information for a SG management, it has a generic problem in its reliability due to a low ability in detect of small defects and some difficulty in a signal analysis. For the improvement of these shortcomings in conventional ECT, profile-MRPC (motorized rotating pancake coil) ECT technology was developed in KAERI. The key of this new technology is the development of new eddy current probes, designated as a diagnostic probe (D-probe). The D-probe is furnished with a simultaneous dual function ...

International Nuclear Information System (INIS)

First results on the effects of strain on transient enhanced diffusion and deactivation of As-implanted ultrashallow junctions are presented. A significant effect of strain on the magnitude and timescale of transient enhanced diffusion is observed, which is consistent with the stabilization of interstitial-type defects by tensile strain. Our results show no significant impact of strain on As electrical activity during the deactivation timescale accessed in this study.

Energy Technology Data Exchange (ETDEWEB)

The risk perception of the public consists of two components: the objectively factual component and the subjectively irrational component. The two strategies adopted by the German gas supply industry are the internal and the external communication strategy. Concepts and measures of accident precaution, registration and analysis of accident data (installation and operating errors, defects on flue systems, pipelines and valves, subsequent installation of gas appliances) are discussed. (R.P.)

UK PubMed Central (United Kingdom)

Nucleotide pool sanitizing enzymes Dut (dUTPase), RdgB (dITPase), and MutT (8-oxo-dGTPase) of Escherichia coli hydrolyze noncanonical DNA precursors to prevent incorporation of base...Full Text Available

International Nuclear Information System (INIS)

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)

Science.gov (United States)

Attention is given to recent research on gear fault diagnostic techniques. A mathematic model for vibration signals of defective gears is presented. Novel methods of gear fault diagnosis, such as zoom complex envelope analysis, wideband demodulation techniques, bispectrum analysis, correlation spectrum analysis, and maximum entropy spectrum analysis, are demonstrated. The wide-band demodulation technique is found to exhibit a high SNR. Bispectrum and correlation spectrum are excellent for some mechanical fault forms.

CERN Document Server

This handbook is a unique compendium of knowledge on all aspects of the physics of liquid crystals. In over 500 pages it provides detailed information on the physical properties of liquid crystals as well as the recent theories and results on phase transitions, defects and textures of different types of liquid crystals. An in-depth understanding of the physical fundamentals is a prerequisite for everyone working in the field of liquid crystal research. With this book the experts as well as graduate students entering the field get all the information they need.

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

CERN Document Server

We report an observation of a delayed all-optical routing/switching phenomenon based on ultraslow group velocity of light via nondegenerate four-wave mixing processes in a defected solid medium. Unlike previous demonstrations of enhanced four-wave mixing processes using the slow light effects, the present observation demonstrates a direct retrieval of the resonant Raman-pulse excited spin coherence into photon coherence through coherence conversion processes.

International Nuclear Information System (INIS)

The phenomenological description of the giant magnetoresistance effect as well as discussion of the requirements which must be fulfilled in giant magnetoresistance thin film structures are given in the first part of our review. In the second part the magnetization reversal and giant magnetoresistance effect of antiferromagnetically coupled multilayers, spin Valve and pseudo-spin valve thin film structures are explained. For these structures we also discuss the influence of the structure defects such as surface roughness and pinholes on the giant magnetoresistance effect. (author)

Energy Technology Data Exchange (ETDEWEB)

The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in order to avoid boron channeling and form shallow p junctions. The modeling of the nucleation of these extended defects is included into the process simulator IMPACT-4. Their density and mean radius are calculated for several annealing times and temperatures and they are compared with experimental characterizations. This is the first step towards a full modeling of the complex processes involved in the transient enhanced diffusion of boron.

Science.gov (United States)

In this work, energy-based features for gear fault diagnosis and prediction are proposed. The instantaneous energy density is shown to obtain high values when defected teeth are engaged. Three methods are compared in terms of sensitivity, reliability and computation effectiveness. The Wigner Ville distribution is contrasted to the wavelet transform and the newly proposed empirical mode decomposition scheme. It is shown that all three methods are capable of a reliable prediction. An empirical law, which relates the energy content to the crack magnitude is established.

International Nuclear Information System (INIS)

In this article carbon co-implantation and step-by-step thermal treatments of shallow p"+-n-junctions formation were used with the purpose of extended defect suppression and reduction of boron transient enhanced diffusion. A substantial improvement of the structural and electrical parameters of shallow p"+-n-junctions has been achieved by using the additional carbon implantation and step-by-step thermal treatments. (authors)

UK PubMed Central (United Kingdom)

Dendritic cells (DC) are the most potent antigen-presenting cells and play a central role in the induction of antiviral immune responses. Recently, we have shown that monocyte-derived DC (MoDC) from...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A case study is presented about the failure of a stainless steel blade reinforcing band in a steam turbine. The inspection results and analysis of samples of material are discussed. Being pitting corrosion and cracks the main defects found, a study of chemical composition and heat treatment state of the steel is made and findings are related to type of failure. (orig.)

UK PubMed Central (United Kingdom)

Bony craniofacial deficits resulting from injury, disease, or birth defects remain a considerable clinical challenge. In this study, microsphere-based scaffold fabrication methods were use to...Full Text Available

International Nuclear Information System (INIS)

In in-service inspection of steam-generator tubes, the need for reproducibility of the measurement results and for comparison of these results over two successive inspections has led EDF to specify the main characteristics of the eddy-current probes and to design equipment to measure them. This equipment is presented here and the electrical and magnetic results are correlated with those obtained by testing tubes with reference defects.

UK PubMed Central (United Kingdom)

Fifty-six tuberculosis patients and twenty-eight control subjects were evaluated in a comprehensive investigation of cellular and humoral immune function in pulmonary TB. The patient group showed significantly...Full Text Available

UK PubMed Central (United Kingdom)

Transcriptional silencing in Saccharomyces cerevisiae occurs at several genetic loci, including the ribosomal DNA (rDNA). Silencing at telomeres (telomere position effect [TPE])...Full Text Available

International Nuclear Information System (INIS)

Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross section transmission microscopy (XTEM) as ...

Science.gov (United States)

15 to 75% of the gun barrel diameter. Similarly, model masses typically vary from 0.01 to 100 .... taining acceptable levels of gun barrel erosion. The ...

UK PubMed Central (United Kingdom)

High resolution of NMR spectroscopic data of biosamples are a rich source of information on the metabolic response to physiological variation or pathological events. There are many advantages...Full Text Available

International Nuclear Information System (INIS)

The properties of the ideal gas of classical (nonquantum) tachyons are considered. Starting from the definition of thermodynamic functions for this system, it may be found that tachyons and bradyons gases are similar. (AA).

Science.gov (United States)

problem similar to the Stefan problem in heat conduction [19]. ..... as the Stefan problem. Although the Stefan problem and the creep rupture ...

Science.gov (United States)

metric temperatures has been prepared showing the surface water temper- ... occasion, gray levels show different densities for similar water temper- ...

UK PubMed Central (United Kingdom)

The in vitro activity of teicoplanin, a new antibiotic related to vancomycin, was determined against 456 gram-positive cocci. The activity of teicoplanin in comparison with that of vancomycin was similar...Full Text Available

UK PubMed Central (United Kingdom)

Three patients are described with foveal lesions resembling minute holes following trauma. The similarity of the lesions to foveomacular retinitis and solar retinopathy suggests that all these conditions...Full Text Available