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We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1-xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift.

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British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations that incorporate free energy of the vapor phase in order to determine the initial growth process of cubic GaN on GaN (001)-(4x1). The results suggest that a N-adsorbed structure appears at the initial growth stage and then Ga adsorbs on the N-adsorbed GaN (001)-(4x1) surface. Considering this process, we performed Monte Carlo simulations. The results suggest that the maximum point of Ga coverage after supplying a Formula Not Shown monolayer of atoms shifted toward a Ga-rich condition from V/III=1.0.

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)b2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed ...

International Nuclear Information System (INIS)

Nanocrystalline powders of GaN with grain sizes ranging from 2 to 30 nm were examined under high external pressures by in situ diffraction techniques in a diamond anvil cell at DESY (HASYLAB, Station F3). The experiments on densification of pure powders under high pressure were performed without a pressure medium. The mechanism of generation and relaxation of internal strains and their distribution in nanoparticles was deduced from Bragg reflections recorded in situ under high pressures at room temperature. The microstrain was calculated from the full-width at half-maximum (FWHM) values of the Bragg lines. It was found that microstrains in GaN crystallites are generated and subsequently relaxed by two mechanisms: generation of stacking faults and change of the size and shape of the grains occurring under external stress. (author)

British Library Electronic Table of Contents (United Kingdom)

SUMMARY We construct a new class of granular landslide models in which avalanches are simulated with large numbers of independent particles moving under the influence of topographically derived gravitational and centripetal acceleration. Concurrently, the particles suffer deceleration due to basal and dynamic friction. The novel aspect of the calculation is that complex particle-to-particle interactions, fluctuating basal contacts, and unresolved topographic roughness within and below the deforming flow are mimicked by random perturbations in along-track and cross-slope acceleration. We apply the method to the 1980 May 18 Mount Saint Helens debris avalanche by constraining the initial geometry and structure of the slide mass from geological data, and the initial failure sequence from eyewi...

Energy Technology Data Exchange (ETDEWEB)

Significantly improved immunity to hot-hole damage of the SiO[sub 2]/Si structure is achieved by a shallow fluorine implantation into the poly-Si gate of MOS capacitors followed by a drive-in process. Compared to the nonfluorinated control, the fluorinated samples exhibit a dramatic reduction of both hole trapping probability and interface-trap generation under avalanche hole injection conditions. The degree of such an improvement increases monotonically as a function of the F implantation dose (up to 10[sup 16]/cm[sup 2]). Significant decrease of the hole detrapping rate is also observed in fluorinated samples. Possible mechanisms are discussed.

International Nuclear Information System (INIS)

GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

Science.gov (United States)

We report the growth and fabrication of midwave infrared InAs/GaSb strain layer superlattice (SLS) detectors. Growth of alternate interfaces leads to a reduced strain between the GaSb buffer and SLS ({delta}a{sub parallel}/a=-5x10{sup -4}), enabling the growth of active regions up to 3 {mu}m (625 periods). The structural, optical, and electrical properties of the active region were characterized using x-ray crystallography and photoluminescence, respectively. p-i-n detectors were grown using 625 periods of 8 ML (monolayer) InAs/8 ML GaSb as the active region. The {lambda}{sub cutoff} for the detectors was 4.6 {mu}m with a conversion efficiency of 32% at V{sub b}=-0.2 V. Detectivity was obtained using noise power spectral density measurements under 300 K 2{pi} field of view illumination and was equal to 5.2x10{sup 10} and 3x10{sup 10} cm Hz{sup 1/2}/W (V{sub b}=-0.02 V, T=80 K) in the white noise and 1/f noise limit (at 50 Hz)

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By using a charge-sensitive preamplifier and methods of energy spectroscopy we investigated the response of a parallel plate avalanche counter in order to scan the Bragg curve. The detector was operated in butane, pentane and heptane which also served as stopping gases. In this paper, we report on results obtained with fission fragments from a /sup 252/Cf source. We achieved a separation of the light and heavy fragment groups in the interval of gas absorber thickness from about 500 ..mu..g cm/sup 2/ to 1.5 mg cm/sup 2/. The best energy loss resolution was achieved with pentane at E/papprox.=70 V cm/sup 1/ Torr/sup 1/ resulting in delta..delta..E/..delta..Eapprox.=13%. The corresponding shape of the ..delta..E spectrum reproduces correctly the nuclear charge distribution of the fragments. (orig.).

CERN Document Server

We show that tilting a model sandpile that has dynamic disorder leads to bistability and hysteresis at the angle of repose. Also the distribution of {\\it local slopes} shows an interesting dependence on the amount of tilt - weakly tilted sandpiles retain the quasi-continuous distributions of the steady state, while large tilt makes the distribution more discrete, with local slopes clustered round particular values. These observations are used to explain recent experimental results on avalanche shapes; we give a theoretical framework in terms of directed percolation.

International Nuclear Information System (INIS)

The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the ...

Energy Technology Data Exchange (ETDEWEB)

The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

International Nuclear Information System (INIS)

A complete heavy ion identification system in heavy ion reaction studies consists, in general, of: 1) a position sensitive avalanche counter, and 2) ionization chamber to obtain total energy as well as a heavy ion identifier signal (such as the E#DELTA#E signal from a E-#DELTA#E type detector or the height of the Bragg peak that scales as Z of the heavy ion in a Bragg curve ionization chamber). In addition, a time-of-flight information may be needed to resolve the masses of the ions. With this motivation in mind, a composite detector system consisting of a Bragg curve spectroscopy ionization chamber (BCS-IC) and a one dimensional position sensitive parallel grid avalanche counter (XPS-PGAC) has been developed and used successfully at the BARC-TIFR pelletron accelerator facility. The design and performance of this gas detector system are reported. (author). 4 refs., 2 figs.

Energy Technology Data Exchange (ETDEWEB)

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 {mu}m In{sub x}Al{sub y}Ga{sub 1-x-y}N alloy grown on 0.5-1.0 {mu}m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In{sub x}Al{sub y}Ga{sub 1-x-y}N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch ...

International Nuclear Information System (INIS)

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping ...

Energy Technology Data Exchange (ETDEWEB)

The authors present design methodology for high power microwave switches. Among all possible applications for such a switch they emphasize the design parameters for application to the pulse compression system associated with the Next Linear Collider (NLC). The switch is based on the excitation of a plasma layer within a silicon wafer by either a laser or an electron beam. They investigate problems associated with high power operation of such a switch. Mainly, they explore solutions to the problems of thermal runaway, avalanche breakdown, photo-emission, and secondary emission. Different design methodologies are presented.

International Nuclear Information System (INIS)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for visible-wavelength electro-optic ...

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

Energy Technology Data Exchange (ETDEWEB)

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.

Energy Technology Data Exchange (ETDEWEB)

A segmented focal plane detector for an Enge split-pole spectrograph has been developed for the study of breakup reactions at very low relative energies. It consists of a 61 cm long segmented position-sensitive parallel plate avalanche counter backed by a large Bragg curve detector. A segmented plastic scintillator is mounted behind the anode of the Bragg curve detector and is used for particle identification of low-ionizing particles. The dead space between the two sections of the focal plane detector is 2.5 mm. The intrinsic position resolution of the detector is 1 mm. The intrinsic energy resolution depends on the energy of the incident ion and can be as good as 0.55%. The nuclear charge and mass resolutions are 0.3 e and 0.3 u, respectively. (orig.).

Science.gov (United States)

This paper discusses the mechanisms of gas breakdown at low values of pressure and inter-electrode gap, i.e. in the vicinity of the Paschen minimum. In this area of pressure and inter-electrode gap values, breakdown occurs either through gas or vacuum mechanisms, and also the so called anomalous Paschen effect appears. Electrical breakdown of electropositive, electronegative and noble gases has been investigated theoretically, experimentally and numerically. Based on the results obtained, regions in which particular breakdown mechanisms appear have been demarcated. Special attention has been devoted to the anomalous Paschen effect as well as to the avalanche vacuum breakdown mechanism.

CERN Document Server

The study of extragalactic planetary nebulae (EPN) is a rapidly expanding field. The advent of powerful new instrumentation such as the PN spectrograph has led to an avalanche of new EPN discoveries both within and between galaxies. We now have thousands of EPN detections in a heterogeneous selection of nearby galaxies and their local environments, dwarfing the combined galactic detection efforts of the last century. Key scientific motivations driving this rapid growth in EPN research and discovery have been the use of the PNLF as a standard candle, as dynamical tracers of their host galaxies and dark matter and as probes of Galactic evolution. This is coupled with the basic utility of PN as laboratories of nebula physics and the consequent comparison with theory where population differences, abundance variations and star formation history within and between stellar systems informs both stellar and galactic evolution. Here we pose some of the burning questions, ...

Energy Technology Data Exchange (ETDEWEB)

A large area Bragg curve spectroscopy (BCS) detector and a position sensitive parallel grid avalanche counter have been developed to study heavy ion reactions, such as inelastic excitations and few nucleon transfer reactions near the Coulomb barrier. Reasonably good resolutions have been achieved for energy, atomic number and angle. A theoretical investigation on the mass dependence of the Bragg peak signal from the BCS detector, shows that there is a negligible mass dependence related to the geometry of the detector. The mass number of the heavy ions which cannot be obtained by the above method, has been identified by detecting the corresponding characteristic gamma rays from the product nuclei with two large solid angle gamma ray detectors. (orig.)

International Nuclear Information System (INIS)

A wide variety of thin film coatings, deposited by different techniques and with potential applications in various important areas, have been characterised by the Phase Modulated Spectroscopic Ellipsometer, installed recently in the Spectroscopy Division, B.A.R.C. The Phase Modulated technique provides a faster and more accurate data acquisition process than the conventional ellipsometry. The measured Ellipsometry spectra are fitted with theoretical spectra generated assuming an appropriate model regarding the sample. The fittings have been done objectively by minimising the squared difference (#chi#"2) between the measured and calculated values of the ellipsometric parameters and thus accurate information have been derived regarding the thickness and optical constants (viz, the refractive index and extinction coefficient) of the different layers, the surface roughness and the inhomogeneities present in the layers. Measurements have been done on (i) ion-implanted Si-wafers to ...

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Due to the improvement of algorithm and the advancement of calculation performance, the imaging by depth migration before stacking is being put into practice from the viewpoint of both calculation cost and accuracy. A lot of imaging examples have been already reported from the survey areas with complicated velocity structures, such as the North Sea and the Gulf of Mexico. Effectiveness of the method has been confirmed. For imaging techniques in Japan National Oil Corporation and Japan Petroleum Exploration Co., Ltd., high-speed depth migration before stacking and high efficiency velocity structure estimation technique have been investigated. This paper describes necessary care to be taken when using depth focusing analysis (DFA) for correcting a velocity model, as an interim stage of case study. The results of depth migration before stacking using dip moveout (DMO) velocity were further inferior to the section obtained by the migration after tracking. Tendency of velocity errors was ...

International Nuclear Information System (INIS)

Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift mobility, surface band bending, and surface capture coefficient for electrons. Samples grown (unintentionally n-type) by nitrogen-plasma-assisted molecular beam epitaxy primarily from two separate growth runs were examined. The results revealed carrier concentration in the range of (3-6)x10"1"6 cm"-"3 for one growth run, roughly 5x10"1"4-1x10"1"5 cm"-"3 for the second, and drift mobility in the range of 500-700 cm"2/(V s) for both. Nanowires were dispersed onto insulating substrates and contacted forming single-wire, two-terminal structures with typical electrode gaps of #approx =#3-5 #mu#m. When biased at 1 V bias and illuminated at 360 nm (3.6 mW/cm"2) the thinner (#approx =#100 nm diameter) nanowires with the higher background doping showed an abrupt increase in photocurrent ...

Energy Technology Data Exchange (ETDEWEB)

A new focal plane detector for an Enge split pole spectrograph has been developed which is able to resolve individual elements and isotopes up to the mass 100 region. It consists of a 60 cm long position sensitive parallel plate avalanche counter backed by a large Bragg curve detector. Compared with other position sensitive focal plane counters the new detector system has a very good time resolution (less than 300 ps) and can be operated at much higher counting rates (up to 25 kHz). The intrinsic resolution of the position detector is less than 1 mm. In addition to the energy and the nuclear charge signal obtained from the Bragg curve detector the angle of incidence into the detector can be measured with an accuracy of better than 1/sup 0/. The detector has already been used in a variety of experiments where good timing, counting rate behavior, and excellent mass resolution over a large energy range were essential.

Science.gov (United States)

The zinc-blende (ZB) and wurtzite (W) structures are the most common crystal forms of binary octet semiconductors. In this work we have developed a simple scaling that systematizes the {ital T}=0 energy difference {Delta}{ital E}{sub W{minus}ZB} between W and ZB for all simple binary semiconductors. We have first calculated the energy difference {Delta}{ital E}{sub W{minus}ZB}{sup LDF}({ital AB}) for AlN, GaN, InN, AlP, AlAs, GaP, GaAs, ZnS, ZnSe, ZnTe, CdS, C, and Si using a numerically precise implementation of the first-principles local-density formalism (LDF), including structural relaxations. We then find a {ital linear} scaling between {Delta}{ital E}{sub W{minus}ZB}{sup LDF}({ital AB}) and an atomistic orbital-radii coordinate {ital {tilde R}}({ital A},{ital B}) that depends only on the properties of the free atoms {ital A} and {ital B} making up the binary compound {ital AB}. Unlike classical structural coordinates (electronegativity, atomic sizes, electron ...

International Nuclear Information System (INIS)

The optical, electromagnetic and mechanical properties of thin films (TFs) are directly correlated to their morphology at the nanoscale. This, in concert with the fact that new deposition techniques are enabling the growth of thin films with very complex morphologies, there is an increasing interest in model-based simulation (MBS) for the design of engineering structures (including nanostructures), and increasing computer speeds are beginning to make MBS an effective design tool capable of bridging the nanoscale with the continuum scale, has made it increasingly important to understand how the nanostructure of a thin film impacts its properties at all length scales. The authors have developed the capability to determine the mechanical properties of thin films with amorphous nanostructure by combining molecular dynamics, i.e., position of particles (e.g., atoms or molecules) and their interatomic potential(s), with continuum mechanics principles. This work concerns the application of ...

Energy Technology Data Exchange (ETDEWEB)

The purpose of the present work is to investigate the effects of matrix resin and fiber content on the behavior of fatigue crack propagation in continuous-glass-fiber-mat reinforced CP-resin composites. For this purpose, ductile matrix resin and brittle one are used. These two kinds of resins have the characteristic that the elastic modulus and tensile strength are nearly the same with each other while the elongation is different. The composite specimens are made of these resins and continuous grass fiber mat of 20 wt.% and 60 wt% fiber contents. The fatigue crack propagation test was conducted by using the tapered DCB specimens to control the stress intensity factor range, {delta}K, during the test. The results obtained are as follows; (1) The relation between the crack propagation rate, da/dN, and {delta}K for all the present materials is shown by a straight line in logarithmic representation. (2) For the composites of 20 wt.% fiber content, the da/dN of the ductile matrix composite ...