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Ion Beam Induced Luminescence (IBIL) and Ion Beam Induced Charge Collection (IBICC) have been applied in the study of the luminescence emission efficiency and investigation of the homogeneity of the luminescence emission in phosphors. The IBIL imaging was performed by using sharply focused ion beams or broad/partially-focused ion beams. The luminescence emission homogeneity in samples was examined to reveal possible distributed crystal-defects that may lead to the inhomogeneity of the luminescence emission in samples.The purpose of the study is to search for suitable luminescent thin films that have high homogeneity of luminescence emission, large IBIL efficiency under heavy ion excitation, and can be placed as a thin layer on the top of microelectronic devices to be analyzed with Ion Photon Emission Microscopy (IPEM). The emission yield was found to be low for organic materials, due to saturation of the light output dependence on the energy deposition of heavy ...

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Short communication. 2 figs.

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

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The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride ...

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Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

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AlGaInP epitaxial layers grown at 690 {degree}C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the {l brace}111{r brace} directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial ...

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Homogenous Al{sub x}Ga{sub 1{minus}x}P liquid phase epitaxial layers have been obtained with the temperature difference method under controlled vapor pressure (TDM-CVP). Very clear fine structures near band edge in photoluminescence spectra have been observed at 77 K for the first time. Photoluminescence measurement results confirmed that the free exciton recombination without phonon assistance plays an important role in the luminescence at 77 K and becomes dominant at room temperature. It is considered that Zero-phonon assisted free exciton recombination is intensified by some local perturbations to electrical potentials against carriers or excitons introduced by Al atoms in Al{sub x}Ga{sub 1{minus}x}P layers, which can give momentum change necessary for recombination.

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The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

International Nuclear Information System (INIS)

A wide variety of thin film coatings, deposited by different techniques and with potential applications in various important areas, have been characterised by the Phase Modulated Spectroscopic Ellipsometer, installed recently in the Spectroscopy Division, B.A.R.C. The Phase Modulated technique provides a faster and more accurate data acquisition process than the conventional ellipsometry. The measured Ellipsometry spectra are fitted with theoretical spectra generated assuming an appropriate model regarding the sample. The fittings have been done objectively by minimising the squared difference (#chi#"2) between the measured and calculated values of the ellipsometric parameters and thus accurate information have been derived regarding the thickness and optical constants (viz, the refractive index and extinction coefficient) of the different layers, the surface roughness and the inhomogeneities present in the layers. Measurements have been done ...

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Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the ...

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The growth of epitaxial MnO(100) and MnO(111) layers on Pd(100) surface has been investigated by spot-profile analysis low-energy electron diffraction, dynamic atomic force microscopy, photoemission and high-resolution electron energy loss spectroscopy, and density functional theory. We have found that despite the large lattice mismatch to the Pd(100) substrate, the MnO(100) layers are kinetically stabilized at low temperatures (?350 deg. C) and at oxygen pressures between 2x10-7 and 5x10-7 mbar. Annealing in ultrahigh vacuum at 650 deg. C or, alternatively, deposition of manganese metal in oxygen pressure -7 mbar causes the transformation of the MnO(100) to a polar MnO(111) surface, which is decorated by triangular pyramids with (100) side facets. It is suggested that the growth of MnO(111) layers is energetically preferred over MnO(100) due to the epitaxial stabilization at the ...

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An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)

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High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing ...

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We carried out theoretical analyses based on ab initio calculations that incorporate free energy of the vapor phase in order to determine the initial growth process of cubic GaN on GaN (001)-(4x1). The results suggest that a N-adsorbed structure appears at the initial growth stage and then Ga adsorbs on the N-adsorbed GaN (001)-(4x1) surface. Considering this process, we performed Monte Carlo simulations. The results suggest that the maximum point of Ga coverage after supplying a Formula Not Shown monolayer of atoms shifted toward a Ga-rich condition from V/III=1.0.

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In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C can be used. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4 x 10{sup 20}At/cm{sup 3} have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution X-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. In this work, we propose a relaxation mechanism based on a kick-out reaction of substitutional Carbon which is accelerated by Phosphorus content through transient ...

International Nuclear Information System (INIS)

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first ...

International Nuclear Information System (INIS)

The excess energy of several III-V and II-VI strained-layer semiconductor superlattices (AC)_p(BC)_p is studied as a function of the repeat period p and orientation G=[001], [110], [111], and [201], using first-principles calculations. We discover a number of universal features, including the predicted instability for nearly all p's and G's with respect to bulk disproportionation, the identification of chalcopyrite as a metastable ordered structure, and the stability of all thin epitaxial [110] and [201] and most common-anion [001] superlattices relative to coherent phase separation.

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The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd/sub 2/Si layers.

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Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

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AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a GaInP active ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the ...

International Nuclear Information System (INIS)

Monte-Carlo simulations of 2-MeV #alpha#-particle channeling in Si_1_-_xSn_x alloys with 0#<=#x#<=#1 have been performed. The simulations are compared with measured channeling-angular scans for strained Si_0_._9_5Sn_0_._0_5 layers grown by molecular beam epitaxy (MBE). Agreement between simulated and measured angular scans can only be achieved if we assume a deviation of the crystal structure from the ideal one. This deviation can be attributed to a mosaic structure in the films and to an atomic-scale distortion of the crystal lattice due to an expected difference in the bond lengths between the Si-Si, Si-Sn and Sn-Sn atoms (such a difference in bond lengths has been observed in the epitaxial Si_1_-_xGe_x system). The contributions from both of these imperfections are estimated and discussed.

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In order to fabricate high temperature superconducting tapes for power applications, the authors have analyzed different buffer layer architectures grown on textured Ni substrates suitable for YBCO deposition. Due to its optimal lattice matching the studied structures present as top layer a CeO{sub 2} film. The deposition of CeO{sub 2} on Ni substrates was performed by pulsed laser ablation and by e-beam evaporation at different temperatures. The films obtained by the two deposition techniques have not optimal structural properties, having a polycrystalline component. The misorientation of CeO{sub 2} is probably due to the formation of NiO at the interface between the film and the substrate during the deposition process even if no oxygen is introduced. In order to prevent Ni oxidation an intermediate 2000 {angstrom} Pd thick film was deposited by e-beam. Furthermore, the lattice mismatch between Pd and CeO{sub 2} is smaller than that between Ni ...

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Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of ...

International Nuclear Information System (INIS)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub ...

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YBCO films were fabricated on PLD-CeO{sub 2}/IBAD-Gd{sub 2}Zr{sub 2}O{sub 7}/Hastelloy substrates using the advanced TFA-MOD process. The effective thickness of the CeO{sub 2} buffer layer for obtaining high I{sub c} was investigated in short samples of YBCO films. The CeO{sub 2} buffer layer was epitaxially grown on an IBAD-Gd{sub 2}Zr{sub 2}O{sub 7} template tape with 18 deg. of {delta}{phi} by a reel-to-reel PLD system. The in-plane grain alignment of PLD-CeO{sub 2} buffer layers rapidly improved with the thickness and saturated at a critical thickness of 0.8 {mu}m. The size of CeO{sub 2} grains was about 1 {mu}m at the saturated thickness of {delta}{phi}. YBCO films with the thickness of 1 {mu}m were deposited by the TFA-MOD on the CeO{sub 2} buffer layer with different thickness films. Improvement of the CeO{sub 2} in-plane grain alignment resulted in increase of I{sub c}. The ...

International Nuclear Information System (INIS)

Analytical TEM and high resolution TEM were used in the microstructural characterization of hot-press sintered Si_3N_4-SiC platelets composites. The quantity of sintering additives, Er_2O_3 and AlN, was varied to produce different matrices, e. g. Si_3N_4, #beta#'+#alpha#'-Sialon and #alpha#'-Sialon. Detailed analysis of platelet-sialon matrix interfaces revealed the presence of AlN polytypoids. The polytypoids nucleate preferentially onto the (0001) plane of SiC and growth epitaxially in several ten nanometer layers contributing in this way to crystallize, partially, the matrix intergranular glass pockets contacting the platelets. Possible applications of the phenomena to microstructural control, grain boundary phase control and enhanced creep resistance are discussed. (orig.).

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The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd/sub 2/Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-..sqrt..3x..sqrt..3R30/sup 0/, the feature being similar to the cases of Ag, Au/Si(111) systems.

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We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

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... Accession Number : ADA137272. Title : Effects of Yttrium Microalloying on the Epitaxial Grain Growth in Ti-6Al-4V Weld Fusion Zones. ...

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We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial ...

International Nuclear Information System (INIS)

Fluorine is known to have a beneficial role for the B diffusion reduction in preamorphized Si, and is promising for the realization of ultra-shallow junctions. Thus, we studied the F incorporation in Si during the solid phase epitaxy (SPE) process, pointing out the effects of the implanted F energy and fluence and the role played by the possible presence of dopants. The incorporation of fluorine proceeds by F segregation at the amorphous-crystalline interface, with a kinetics driven by the SPE rate. In fact, the quicker the SPE rate, the higher is the F fluence retained. Moreover, we demonstrated that F incorporated in Si layers does not appreciably affect the Is emission from spatially separated end-of-range (EOR) defects. The modification, induced by the presence of F, of the point defect density (Is and Vs) was also studied by means of B and Sb spike layers, used as local markers for Is and Vs, respectively. We showed ...

International Nuclear Information System (INIS)

Distributed Bragg reflectors (DBRs) composed of In_0_._5Al_0_._5P/In_0_._5(Al_yGa_1_-_y)_0_._5P quarter-wave layers have been prepared using metalorganic vapor phase epitaxy. The structures were grown over a wide range of high-index layer composition (0#<=#y#<=#0.6) and peak reflectivity wavelength (720 nm#<=##lambda##<=#565 nm, covering the spectrum from deep red to green). In all cases observed and calculated reflectance spectra were in excellent agreement. Using these DBRs, an undoped all-phosphide visible vertical cavity surface-emitting laser structure was grown. Under pulsed optical excitation at room temperature, lasing was obtained at a wavelength of #lambda##approx#670 nm, with a threshold power density comparable to that observed from similar structures prepared using AlAs/AlGaAs DBRs.

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Modelization of crack propagation and theoretical prediction of rupture are the two main objectives of researchers in stress corrosion cracking. Nevertheless, to reach this aim, the behavior of the passive film which appears spontaneously on the substrate in contact with an environment has to be known. This structural and mechanical characterization is all the more difficult because the number of parameters is important: crystallinity rate, defects concentration, thickness (about a few nanometers), electric field, chemical composition (a lot of oxides are present), peeling layers (atomic structure for example) and some hypothesis can be made about their multi-layer structure, their chemical composition or their epitaxial character... Passive films formed on 316L or 304L stainless steels in different aqueous solutions (in ambient air, in MgCl_2 at 117 deg. C...) have been studied and some important remarks about their ...

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The x-ray diffraction technique described previously for measurement of growth kinetics of Pd/sub 2/Si layers from their solid state reaction couples has been extended by the use of a one-dimensional position-sensitive detector (PSD). Additionally, the method has been extended to include measurement of the Pd layer. A detailed description of the experimental arrangement and analytical procedures is presented. The kinetics of epitaxial Pd/sub 2/Si film growth were measured in situ over a range of 170--230 /sup 0/C. The PSD results, using data obtained from both the Pd/sub 2/Si and Pd layers, were able to confirm parabolic growth behavior for the Pd/sub 2/Si film. The rate constants followed Arrhenius behavior and yielded an activation energy of E = 1.32 +- 0.07 eV with a prefactor k/sub 0/ = 0.49 cm/sup 2//s for the Pd/sub 2/Si layer analysis and E = 1.34 +- 0.17 eV with a prefactor ...

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The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a technique known as pulsed laser deposition, and ...

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The work in the past year has primarily involved four areas of magnetic thin films: amorphous rare earth-transition metal alloys, epitaxial CoPt{sub 3} and Ni-Pt alloy thin films, amorphous rare earth doped Si (a new class of dilute magnetic semiconductor with large negative magnetoresistance which the authors have discovered), and exchange-coupled antiferromagnetic insulators. In the amorphous alloys, they made a systematic study of the effects of local anisotropy, macroscopic (perpendicular) anisotropy, and exchange constant on the fundamental (and practical) properties of these magnetic alloys, as originally described in the grant proposal. The work on the epitaxial Co-Pt (and more recently Ni-Pt) alloys was originally undertaken as a comparison study to the amorphous alloys. Crystalline Co-Pt alloys have many striking similarities to the amorphous rare earth-transition metal alloys: perpendicular magnetic anisotropy, magneto-optic activity, ...

International Nuclear Information System (INIS)

GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

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We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant concentration which can be ...

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Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 #mu#m was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from ...

International Nuclear Information System (INIS)

The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In particular, the I-substitutional carbon (C) interactions have been studied, using a molecular-beam-epitaxy grown Si_1_-_yC_y layer interposed between the shallow I-source and a deeper B-spike (marker for I-concentration). Substitutional C atoms are shown to trap I's, to be removed from their substitutional sites, and to form stable precipitates into the C-rich region. The I-trapping mechanism was quantitatively studied by a simulation code. The reactions causing trapping and deactivation are described. In addition, the boron markers approach was extended to the two dimensional (2D) diffusion. High resolution scanning capacitance microscopy was used for quantitative measurements of the 2D boron transient enhanced diffusion induced on a boron delta array by the I's ion beam injected through a ...

International Nuclear Information System (INIS)

A scalar-relativistic procedure for calculating the valence-electron contribution to the total energy of bulk and thin-film solids has been developed and applied to the fcc and bcc phases of the group-VIB transition elements Cr, Mo, and W. This approach, which is based on the linear augmented-plane-wave method and local-density-functional theory, contains no shape approximations for either the charge density or potential. The formulation adopts a rigid-core approximation and incorporates an exact treatment of the core-charge tails that extend beyond the muffin-tin spheres. The application of this procedure to bcc Cr, Mo, and W yields calculated lattice parameters and bulk moduli that are in good (Cr) to excellent (Mo and W) agreement with experiment. The present calculated properties also agree quite well with the results of previous calculations involving a variety of band-structure methods. The calculated fcc-bcc energy difference for Cr, Mo, and W increases in a nearly linear manner ...

International Nuclear Information System (INIS)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P"+/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B"+ and BF_2"+ ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF_3 as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD ...

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Pd/sub 2/Si layers produced by evaporation or sputtering onto silicon substrates were examined by high resolution electron microscopy, microdiffraction, X-ray, energy loss and Auger spectroscopy. The Si-Pd/sub 2/Si interfaces produced by evaporation were in all cases rougher and more polycrystalline than those produced by sputtering. X-ray microanalysis showed the predictable variation in palladium distribution across the interface but quantification did not produce the expected palladium-to-silicon ratios, primarily because of probe broadening and X-ray-induced fluorescence. Energy loss spectra showed plasmon energy shifts and changes in Si L edge shape due to bond formation with palladium. Auger data provided evidence for a small amount of oxygen at the Si-Pd/sub 2/Si interface. Electrical measurements of the ideality factor for Schottky barriers made from the materials produced higher values for the rougher evaporation-formed interfaces consistent with ...

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High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transient-enhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for long-range self-interstitial migration in Si, and we believe these are the first observations of the interstitialcy diffusion mechanism ...

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The temperature dependence of the spontaneous magnetization of epitaxial iron films with a thickness ranging from d=20 to 200nm has been measured. The films are grown on GaAs (100) substrates which are covered by a 150nm thick silver (100) buffer layer. For three-dimensional BCC iron it was observed already in 1929 that saturation of the spontaneous magnetization for T->0 is perfectly described by a T{sup 2} power law. On the other hand, for thin two-dimensional (2D) iron films a T{sup 3/2} law has been established in many recent experimental investigations. In our iron films grown on diamagnetic silver, this dimensionality change occurs at a thickness between d=100 and 200nm. Comparison of the here-observed T{sup 3/2} coefficients with those on iron films grown on paramagnetic tungsten (110) shows that the 2D interactions are {approx}20 times larger in the films on tungsten. Recent results on Fe films which are grown directly on GaAs ...

International Nuclear Information System (INIS)

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.

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The properties and low pressure organometallic vapor phase epitaxy of Ga{sub x}In{sub 1{minus}x}P/(AlGa){sub 0.5}In{sub 0.5}P quantum well (QW) laser diode heterostructures with Al{sub 0.5}In{sub 0.5}P cladding layers, and having wavelength 614 < {lambda} < 690 nm, are described. At longer wavelengths ({lambda} > 660 nm), threshold current densities under 200 A/cm{sup 2} and efficiencies greater than 75% result from a biaxially-compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.

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Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.

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We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and after post-growth thermal annealing. In ...

Science.gov (United States)

An x-ray diffraction approach has been developed for determination of the kinetics of growth of Pd/sub 2/Si layers. Epitaxial Pd/sub 2/Si films were grown on Si(111) substrates over a temperature range of 160-222/sup 0/C by a solid-state reaction between the substrates and the Pd overlayers. The parabolic rate equation was verified and rate constants showed Arrhenius behavior with an activation energy E/sub a/ = 1.06 eV and prefactor k/sub 0/ = 7 x 10/sup -4/ cm/sup 2//s. The low value of E/sub a/ suggests a short-circuit diffusion mechanism. It is reasonable to expect that impurities and microstructure may play important roles in the growth process. Impurity levels in the specimens were evaluated by analytic techniques suited to thin-film study: Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Auger electron spectrometry. No impurities were present at concentrations approaching 1 at. %. Some O, C, and F were ...

International Nuclear Information System (INIS)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for ...

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We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 {mu}m In{sub x}Al{sub y}Ga{sub 1-x-y}N alloy grown on 0.5-1.0 {mu}m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In{sub x}Al{sub y}Ga{sub 1-x-y}N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have problems with low quantum efficiency and cracks due in part to lattice mismatch ...

International Nuclear Information System (INIS)

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping ...

Science.gov (United States)

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for ...

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

We report the influence of a small quantity of Cl[sub 2], which enhanced the selectivity of silicon-selective epitaxial growth (Si-SEG) in UHV-CVD using Si[sub 2]H[sub 6], on both the epitaxial growth rate and the B-doping properties for each Si and Si[sub 1-x]Ge[sub x] film. The small quantity of Cl[sub 2] inhibited the Si, Ge and B incorporation, while the selectivity was enhanced. However, it was found, in the case of Si[sub 1-x]Ge[sub x]-SEG using Cl[sub 2], that the reduction ratio of both the growth rate and the B incorporation were smaller than those of Si-SEG with the selectivity still more enhanced. (orig.)

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

British Library Electronic Table of Contents (United Kingdom)

We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1-xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift.

International Nuclear Information System (INIS)

The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.

International Nuclear Information System (INIS)

The use of a selective epitaxial growth technique for fabricating YBCO thin-film microstructures is described. No film post-deposition processing is required; hence damage to the structure is minimized. The technique is compatible with a passivation process to protect the structure without exposure to air. The microbridges, Josephson junctions and rf SQUIDs protected by an amorphous YBCO passivation have long lifetime even after severe accelerated aging tests. Rf SQUIDs fabricated by this technique show a significant reduction of low-frequency noise when operating in weak magnetic fields compared with SQUIDs fabricated by the conventional ion beam etching technique. (author)

Science.gov (United States)

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Science.gov (United States)

A modified epitaxial design leads to straightforward implementation of short (1{lambda}) optical cavities and the use of C as the sole {ital p}-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

British Library Electronic Table of Contents (United Kingdom)

Layered carbon fiber mats have been prepared by layer-by-layer (LBL) electrospinning of polyacrylonitrile onto thin natural cellulose paper and subsequent carbonization. The layered carbon fiber mat has been proved to be a promising microbial fuel cell anode for high density layered biofilm propagation and high bioelectrocatalytic anodic current density.

International Nuclear Information System (INIS)

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

Energy Technology Data Exchange (ETDEWEB)

Due to the improvement of algorithm and the advancement of calculation performance, the imaging by depth migration before stacking is being put into practice from the viewpoint of both calculation cost and accuracy. A lot of imaging examples have been already reported from the survey areas with complicated velocity structures, such as the North Sea and the Gulf of Mexico. Effectiveness of the method has been confirmed. For imaging techniques in Japan National Oil Corporation and Japan Petroleum Exploration Co., Ltd., high-speed depth migration before stacking and high efficiency velocity structure estimation technique have been investigated. This paper describes necessary care to be taken when using depth focusing analysis (DFA) for correcting a velocity model, as an interim stage of case study. The results of depth migration before stacking using dip moveout (DMO) velocity were further inferior to the section obtained by the migration after tracking. Tendency of velocity errors was ...

Energy Technology Data Exchange (ETDEWEB)

To prove that two-layer, TBP-nitric acid mixtures can be safely stored in the Canyon evaporators, it must be demonstrated that a runaway reaction between TBP and nitric acid will not occur. Previous bench-scale experiments showed that, at typical evaporator temperatures, this reaction is endothermic and therefore cannot run away, due to the loss of heat from evaporation of water in the organic layer. However, the reaction would be exothermic and could run away if the small amount of water in the organic layer evaporates before the nitric acid in this layer is consumed by the reaction. Provided that there is enough water in the aqueous layer, this would occur if the organic layer is sufficiently thick so that the rate of loss of water by evaporation exceeds the rate of replenishment due to mixing with the aqueous layer. Bubbles containing ...

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Craters were produced in the surface of a Pt-specimen by plasma discharge. Using a Focussed Ion Beam (FIB), TEM-foils of the cross section of the craters were prepared in order to examine the microstructural changes occurring as a result of the discharge impact. The molten material pushed to the edge of the craters was able to be identified. The grains beneath the craters reached the surface of the crater by a mechanism of epitaxial growth. (orig.)

Energy Technology Data Exchange (ETDEWEB)

By means of infrared spectroscopy, x-ray diffraction, and differential thermal analysis, the authors investigate the pyrolysis of dichlorodithiourea cadmium, the vapor phase epitaxy of the cadmium sulfide film, and the composition of the solid and gaseous pyrolysis products. Those products are found to include the thiocyanates of guanidine, ammonium, and hydrogen along with cadmium oxides and sulfates and hydrochloric acid.

Energy Technology Data Exchange (ETDEWEB)

This work deals with a rational vision of stratospheric ozone including the threats on ozone layer, the verifications and the fears. After a recalling on the ozone layer history, the authors treats the question of the ultraviolets particularly the beneficial effects. Then an explanation of the ozone layer decrease is given. (O.L.). 29 refs., 6 figs.

International Nuclear Information System (INIS)

Empirical formulae are proposed for the description of relation between optimum energies minimizing the mean-weighted error of gamma absorption measurement of the thickness of layers in two-layer products with the thickness of every layer from 30 up to 150 mm by carbon. Error of informational parameter approximation with the application of tables does not exceed 10% in case of non-accurate assessment of layers thickness not exceeding 2.5%. Generalized equation is derived which binds main parameters of the task and permits to choose optimum energies with the accuracy sufficient for practical purposes

UK PubMed Central (United Kingdom)

Gangliosides are amphiphilic molecules found in the outer layer of plasma membranes of all vertebrate...Full Text Available

International Nuclear Information System (INIS)

A method was proposed and examined to deposit thick cubic boron nitride (cBN)-rich layer of good adhesion to silicon substrate. The method combined (i) the insertion of a thick sp"2 buffer layer, and (ii) the use of an appropriate assist ion beam energy for the growth of the cBN-rich top layer. The sp"2-bonded boron nitride buffer layer was deposited under irradiation of ions with energies in the range of 200-360 eV. The buffer layer was found to contain curled graphitic basal planes, and so was supposed to be relatively deformable, and facilitate the relaxation of stresses in the cBN-rich top layer. The ion assist introduced during the growth of the cBN-rich layer was supposed to both create and annihilate defects, and so resulted in the generation and relaxation of internal stresses. Results showed that the insertion of a 492 nm sp"2 ...

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method ...

International Nuclear Information System (INIS)

We present an approach for fabrication of intentionally positioned epitaxial InAs QDs in a micron sized light emitting diode. For site-selective growth, a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation technology in an all-ultra-high-vacuum (UHV) setup has been employed. Single dot occupancy of almost 55 % on FIB patterned nano-depressions was successfully achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding these QDs in the intrinsic part of a GaAs-based micron sized p-i-n junction device. Few or single dot are expected to be electrically addressed in these devices. We report results from electroluminescence (EL) measurement which proves the single dot characteristics of our device. The EL spectra consist of sharp emission lines and their dependence on injection current shows linear behavior for exciton ...

International Nuclear Information System (INIS)

The structure of the layers formed on a silver electrode by the adsorption of pyridine, Cl"-, CN"- and SO_4"2"- is discussed. A comparison of the amount of the species adsorbed with their Raman spectra shows that there is no simple relation between the species concentration and the enhancement of the Raman intensity. Furthermore, the inhomogeneity of the layers is shown by Raman microscopy observations. These results lead the authors to propose the formation of a new species stabilized in the colloidal silver layer. The Raman enhancement could be explained by the existence of a resonance effect. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

Governments around the world will soon make decisions on policies that could determine the fate of the ozone layer-the Earth's shield from harmful ultraviolet radiation. The Vienna Convention for the Protection of the Ozone Layer, signed on March 22, 1985, created a framework for scientific cooperation and information exchange that will form the basis for a protocol for controlling substances thought to threaten the ozone layer. As of mid-1987, 29 countries had signed the Convention, including the major producers and users of chlorofluorocarbons (CFCs), the most important of suspect chemicals.

KoreaScience (Korea)

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KoreaScience (Korea)

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KoreaScience (Korea)

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International Nuclear Information System (INIS)

Planar channeling effects are studied in such well-oriented polycrystalline layers as NiSi_2 and Pb_2Si layers formed on single crystalline Si. Crystalline perfection of such layers is discussed by using the energy- and angular dependences of the axial and planar channeling yields. It has been shown that, in suitable conditions, the energy dependence of the planar yield is more sensitive to the spread of crystallite orientations in polycrystals than that of the axial one. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

International Nuclear Information System (INIS)

Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.

British Library Electronic Table of Contents (United Kingdom)

Epitaxial thin films of nanotwinned face-centered cubic metals such as Cu possess an unprecedented combination of high hardness and high electrical conductivity due to the unique structure of nanometer-spaced coherent twin boundaries. Recent studies of in-situ nanoindentation in a transmission electron microscope have provided new insights on the deformation behavior of nanotwins that are reviewed here. In particular, two unit processes are highlighted: first, stress-induced migration of ?3 {112} incoherent twin boundary that leads to de-twinning of nanotwins; second, twinning dislocation can be multiplied at ?3 {111} coherent twin boundary.

Energy Technology Data Exchange (ETDEWEB)

Focussed ion beam (FIB) technology has the advantage of being a maskless process compatible with UHV processing. This makes it attractive for use in in situ processing and has been applied to the fabrication of various mesoscopic structures. The present paper reviews these results whilst putting emphasis on in situ processing by a combined FIB and molecular beam epitaxy system. The typical performance of present FIB systems is also presented. In order to utilize the potential advantages of FIB processing, reduction of damage and improvement of throughput are important, and much effort has been devoted to developing processing techniques which require a reduced dose. The importance of low-energy FIB is discussed. (author).

International Nuclear Information System (INIS)

The authors present an investigation of structural changes occurring in bilayer stacks with crystalline columnar growth when one of the layers is substituted by layers known to grow amorphous. In Co/Cu multilayers the Co layers were substituted by CoZr layers of varying Zr content and layer thickness. Structural characterization was performed by transmission electron microscopy (TEM). They show that the amorphization of the CoZr layers leading to a destruction of the columnar growth depends both on the Zr content and on the thickness of the CoZr layers. Additionally a change to textured growth with a normal to the substrate occurs with increasing Zr content. They explain their observations by a simple picture based on the hard sphere model.

Energy Technology Data Exchange (ETDEWEB)

A route, as followed by ECN, is described for development of SiN{sub x}:H layers deposited by microwave (MW) PECVD, which are suited for surface and bulk passivation of mc-Si solar cells. First research was focussed on surface passivation and this resulted in the development of SiN layers that were Si-rich and where the hydrogen is mainly bonded to silicon atoms. A disadvantage of such Si-rich layers is their large absorption at shorter wavelengths, which make them unsuitable as front side AR coatings. Further, these layers appeared to be less suitable for bulk passivation. The next step therefore was the development of SiN layers for bulk passivation. For good bulk passivation of solar cells by means of a thermal anneal of the SiN layers, we found that SiN layers with high N-H bonding concentrations are required. Fine-tuning of the ...

Energy Technology Data Exchange (ETDEWEB)

[sup 13]C epitaxial diamond films have been grown on [sup 12]C-type IIb diamond substrates doped with boron, using electron assisted chemical vapor deposition. The relation between etch pits to dislocations in [sup 13]C diamond film and the broadening of the first-order Raman peak was examined. The reactant gas was [sup 13]CH[sub 4] of > 99% purity. The substrate temperature was varied from 943 to 1300 C. The uneven surface morphology was confirmed by atomic force microscopy (AFM) and laser microscopy. From 943 to 1030 C, etch pit rows along left angle 100 right angle were observed. At 991 C, the etch pit density on a row was 3300 to 5000 pits/cm. The Ar[sup +] laser beam was focused on a transparent area near the row of etch pits, where the boron impurity of the substrate is less than several 10 ppm. The first-order Raman line of [sup 13]C epitaxial diamond film was broadened to 3.6-4.0 cm[sup -1]. The line broadening was 50-90% compared ...

International Nuclear Information System (INIS)

AlN nanocrystalline layers and superstructures are used in the modern optoelectronic technology as reflecting mirrors in semiconductor layers. In the present work the properties of AlN films prepared by sputtering methods from an AlN target in reactive Ar + N plasma were investigated. The characterization was performed with HRTEM, SEM, glancing angle XRD and RBS methods. The present measurements confirmed the polycrystalline structure of AlN layers and enabled the evaluation of their grain size. The roughness and thickness of the layers were additionally determined by ellipsometric and profilometric measurements. (author)

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As part of the studies on coal utilization basics, considerations were given on quantification of sulfur forms of coal and the pyrolysis behavior of sulfur compounds. With the temperature raising oxidation method, a thermo-balance was connected directly to a mass analyzer, and the coal temperature was raised at a rate of 5{degree}C per minute and gasified. Peak division was performed on SO2 and COS production to derive sulfur forms of coal. Using the slow-speed pyrolysis method, production rates of H2S, COS, SO2 and mercaptans were measured at a temperature raising rate of 20{degree}C per minute. Sulfur content in char was also measured. With the quick pyrolysis method, a Curie point pyrolyzer was connected directly to a gas chromatograph, by which secondary reaction is suppressed, and initial pyrolytic behavior can be tracked. All kinds of coals produce a considerable amount of SO2 in the slow-speed pyrolysis, but very little in the quick pyrolysis. Instead, H2S and mercaptans are ...

International Nuclear Information System (INIS)

We use the Generalized Quasi-Chemical Approach (GQCA) combined with ab initio ultrasoft pseudopotential calculations within density functional theory in order to obtain the structural and electronic properties of Al_xGa_yIn_1_-_x_-_yX (X=As, P or N) quaternary alloys in the zincblende structure. Results for the bond lengths show that their variations with composition are approximately linear and that they do not deviate much from the values of the corresponding binary compounds. For the variation of the band gaps, we obtain a bowing parameter b=0.26 eV for the (Ga_0_._4_7In_0_._5_3As)_z(Al_0_._4_8In_0_._5_2As)_1_-_z quaternary alloy lattice matched to InP, in very good agreement with experimental data. In the case of AlGaInN, a bowing parameter of 0.22 eV is obtained for zincblende AlGaInN lattice matched to GaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

International Nuclear Information System (INIS)

High quality graphene sheets are synthesized through efficient oxidation process followed by rapid thermal expansion and reduction by H2. The number of graphene layers is controlled by tuning the oxidation degree of GOs. The higher the oxidation degree of GOs is getting, the fewer the numbers of graphene layers can be obtained. The material is characterized by elemental analysis, thermo-gravimetric analysis, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and Fourier transform infrared spectroscopies. The obtained graphene sheets with single, triple and quintuplicate layers as anode materials exhibit a high reversible capacity of 1175, 1007, and 842 mA h g-1, respectively, which show that the graphene sheets with fewer layers have higher reversible capacity. -- Graphical abstract: The typical TEM images of the graphene sheets derived from GO3(a), GO2(b) and ...

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Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer ...

British Library Electronic Table of Contents (United Kingdom)

In this work AISI 1045 steel were duplex treated via plasma nitriding of chromized layer. Samples were pack chromized by using a powder mixture consisting of ferrochromium, ammonium chloride and alumina at 1273K for 5h. The samples were then plasma-nitrided for 5h at 803K and 823K, in a gas mixture of 75%N2+25%H2. The treated specimens were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and Vickers micro-hardness test. The thickness of chromized layer before nitriding was about 8mm and it was increased after plasma nitriding. According to XRD analysis, the chromized layer was composed of chromium and iron carbides. Plasma nitriding of chromized layer resulted in the formation of chromium and iron nitrides and carbides. The hardness of the duplex layer...

Science.gov (United States)

The storage and chemical properties of the forest litter in dark coniferous forest of Sejila Mountain were studied. The results showed that the existing storage was 5.863 t.hm-2 and the annual litter fall was 0.3205 t.hm-2. It implied that the forest litter decomposed slowly and accumulated quickly, and the turnover of nutrient circles was slow. The contents of N, Ca, Na, and Mn nutrient elements in litter layer were in the order of un-decomposed layer (U layer) > semi-decomposed layer (S layer) > decomposed layer (D layer), those of K, Fe, and Mg were in the order of D layer > S layer > U layer, and P element content was in the order of U layer > D layer > S layer. The pool of elements was 78.483 ...

UK PubMed Central (United Kingdom)

The purpose of this study was to determine the thickness of the macula and the retinal nerve fiber layer (RNFL) in Japanese subjects by Stratus optical coherence tomography (OCT), and to compare the...Full Text Available

UK PubMed Central (United Kingdom)

Hydrolytic exoenzymes as indicators of metabolically active bacteria were investigated in four consecutive sapropel layers collected from bathyal sediments of the eastern Mediterranean Sea. For comparison,...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A prototype detector based on the inclined boron layer principle is introduced. For typical measurement conditions at the Liquids Reflectometer at the Spallation Neutron Source, its count rate capability is shown to be superior to that of the current detector by nearly two orders of magnitude.

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In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage ...

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A duplex surface treatment technique based on calorizing and plasma nitriding was developed to improve the wear and oxidation resistance of H13 steel at high temperatures. The effects of the relative thickness of the calorized layer to the depth of plasma nitriding on the wear and oxidation properties at temperatures up to 900 C were investigated in this work. High-temperature wear tests were performed at 500 C with dry conditions in open air using a ball-on-disk type tribotest machine. Isothermal oxidation tests were performed at 900 C for up to 100 h under controlled atmosphere. The results indicated that the specimens with a calorized layer as an intermediate phase between the surface duplex layer and the base metal showed higher wear and oxidation resistance than the specimens with a nitrided layer alone. During exposure to elevated temperatures, the aluminum in the calorized ...

UK PubMed Central (United Kingdom)

The mammalian neocortex consists of six layers. By contrast, the reptilian and avian cortices have only three, which are believed to be equivalent to layers I, V and VI of mammals. In mammals, the majority...Full Text Available

Science.gov (United States)

... This pinhole process may be similar to the formation of an oxide layer in aluminum electrolytic capacitors immersed in a borax solution. ...

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Cesium recovery from the polluted layers in the 1/3 scale hydrogen negative ion source for LHD-NBI system has tested. It was found, that the cesium recovery can be produced by additional discharges as from the cesium layer, aged by tungsten and residual gas, so as from the cesium layers, polluted by an occasional water leak. The highest cesium recovery to NI production was produced by a xenon arc, while glow discharge and arcing in hydrogen were less effective. The mechanism of recovery is the ejection of cesium from the underlying enriched layer by the arc and its transport to the surface. (author)

International Nuclear Information System (INIS)

With the aim of optimizing the nitriding process parameters (temperature and gas mixture ) experimental studies of the plasma nitriding of Ck 15 steel were carried out, using a D. C. glow discharge. Nitriding treatments were performed at 450, 500 and 550 and N_2/H_2 volume ratio of 3/1, 1/1 and 1/3 for 5 hours. Nitriding treatment produces modified surface layer consisting of an outer compound layer and an inner diffusion layer.The plasma nitriding of Ck 15 produce single white layer consisting of #gamma#-(Fe_4N).

British Library Electronic Table of Contents (United Kingdom)

There is investigated the role of polymer layers on the metal surface of a fine filler in the formation of a PVC system with electrophysical properties. It is shown that a physicochemical polymer modification takes place under the surface active center influence. Thus, the surface layer properties (density and geometrical characteristics) differ from the PVC ones. The correlation between the electrophysical properties of the PVC composite and the surface layer in the range of the fine copper fraction of 0?11.3 vol % at E ? 106 V m?1 and a frequency response of 20?2 ? 105 Hz is determined. An explanation of the investigated relation is presented.

Science.gov (United States)

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The paper describes an analytical study of two parallel-flowing boundary layers of free and forced convection modes on the facing sides of a vertical thin wall. The two layers are analyzed separately within the framework of boundary layer theory, and coupled by the matching conditions at wall. Numerical data are obtained for a wide range of a dimensionless conjugation parameter {zeta} relating the heat transfer effectiveness of two convection modes. Based on these data, an expression for calculating the conjugate mean Nusselt number as a function of {zeta}-parameter is found by means of a curve-fitting method. (orig.)

Energy Technology Data Exchange (ETDEWEB)

A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.

International Nuclear Information System (INIS)

In order to investigate the role of amorphous SiO2 particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO2 particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO2 was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO2 particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of ?-phase and amorphous nano-SiO2 particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO2 particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite alloying layer was ...

International Nuclear Information System (INIS)

A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.

International Nuclear Information System (INIS)

A radiometric method was elaborated for surface density determinations of the adhesive layer of plasters by radionuclide X-ray fluorescence using the 17.47 keV bremsstrahlung of "1"4"7Pm/Mo. The bremsstrahlung line excites the 8.63 keV characteristic K#alpha# line of Zn contained in the adhesive layer of the plaster as a filling material in the form of ZnO. In homogeneous adhesive layers the Zn content is proportional to surface density. (author).

International Nuclear Information System (INIS)

This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe-MgO-Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the ...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

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The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As/sup +/ implanted Si. 12 references, 12 figures.

International Nuclear Information System (INIS)

The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As"+ implanted Si. 12 references, 12 figures.

International Nuclear Information System (INIS)

The present article will review recent advances in focused ion beam (FIB) technology. With increasing demands for scale of integration, microfabrication technology is becoming more important and various new microfabrication tools and processing techniques are desired. FIB is one of the promising tools for future microfabrication technology. This provides maskless patterning capability, which is of importance for process simplification, nanofabrication and in the development of in situ vacuum processing. In situ vacuum processing systems are being developed by combining FIB and a molecular beam epitaxy system. Radiation damage may limit applications of FIB. However, it was demonstrated that low energy FIB (<1 keV) with very high brightness was reached and promising results for low damage processing have been obtained. (orig.).

International Nuclear Information System (INIS)

Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)

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This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

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This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

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Nanoscale islands of Cu2O have been synthesized on single-crystal SrTiO3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (OPA-MBE). Island growth location has been controlled by using an ex-situ Ga+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. Analysis of Cu2O dot growth on unmodified substrate regions revealed an evolution of dot size and array density. Atomic force microscopy studies show that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of islands. Islands initially formed in the FIB-generated surface topography and filled those features before nucleating on neighboring unmodified surface regions.

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Nanoscale islands of Cu?O have been synthesized on single crystal SrTiO? (100) substrates using oxygen plasma assisted molecular beam epitaxy (MBE). Island growth location has been controlled by using an ex-situ Ga? focused ion beam (FIB) to modify the growth surface in discrete locations prior to island sythesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex-situ AFM study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.

International Nuclear Information System (INIS)

The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

British Library Electronic Table of Contents (United Kingdom)

An investigation into a three-dimensional, curved shock wave interacting with a three-dimensional, curved boundary layer on a slender body is presented. Three different nose profiles mounted on a cylindrical body were tested in a supersonic wind tunnel and numerically simulated by solving the Navier?Stokes equations. The conical and hemispherical nose profiles tested were found to generate shock waves of sufficient strength to separate the boundary layer on the cylinder, while the shock wave generated by the ogival profile did not separate the boundary layer. For the separated flow, separation was found to occur predominantly on the windward side of the cylinder with the lee-side remaining shielded from the direct impact of the incident shock wave. A thickening of the boundary layer on the...

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Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation (< 0.005 cc/m{sup 2}/day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging.

International Nuclear Information System (INIS)

This report summarizes the findings of a five-month LDRD project funded through Sandia's NTM Investment Area. The project was aimed at providing the foundation for the development of advanced functional materials through the application of ultrathin coatings of microporous or mesoporous materials onto the surface of substrates such as silicon wafers. Prior art teaches that layers of microporous materials such as zeolites may be applied as, e.g., sensor platforms or gas separation membranes. These layers, however, are typically several microns to several hundred microns thick. For many potential applications, vast improvements in the response of a device could be realized if the thickness of the porous layer were reduced to tens of nanometers. However, a basic understanding of how to synthesize or fabricate such ultra-thin layers is lacking. This report describes traditional and novel approaches to the ...

Energy Technology Data Exchange (ETDEWEB)

As for surface treatment of steel, the ion nitriding method has a lot of advantages and is practically used, while the plasma nitriding is known as a method which is faster in nitriding than the ion nitriding method. However, there are few reports and many unclear points on the plasma nitriding method. In this study, the plasma nitriding of pure iron and SUS304 is conducted using r.f. nitrogen plasma glow discharge to examine composition of the nitrided layers, microstructures, nitriding rate, etc. Moreover, by exposing the specimen once nitrided to H2 plasma, a phenomenon that nitrogen comes out of the specimen surface is examined. It is found from the result that the nitrided layer is divided into a compound layer and a diffusion layer in order from the surface, that in case of pure iron, the compound layer grows predominantly at a low temperature, and the diffusion ...

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The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization ...

Energy Technology Data Exchange (ETDEWEB)

A brief review and assessment of field measurement programs that provide data for mixed layer diffusion research is presented. The majority of programs emphasize either the meteorological aspects of the mixed layer or plume characterization. Few programs are available that provide the complimentary blend of plume and appropriate meteorological measurements needed to adequately validate mixed layer diffusion theory. Three major U.S. EPA (Environmental Protection Agency) field programs that provide data bases for model development and validation of mixed layer diffusion processes are described and discussed in more detail. The Regional Air Pollution Study (RAPS) focused on measurements of surface and mixed layer turbulent transport processes in the urban environment. The Tennessee Plume Study (TPS) obtained a database with coincident measurement of boundary layer ...

Energy Technology Data Exchange (ETDEWEB)

The present work describes the surface improvement and biocompatibility of TiAl{sub 24}Nb{sub 10} intermetallic alloy using rf plasma nitriding. The nitriding process was carried out at different plasma power from 400 W to 650 W where the other plasma conditions were fixed. Grazing incidence X-ray diffractometry (GIXRD), Auger electron spectroscopy (AES), tribometer and a nanohardness tester were employed to characterize the nitrided layer. Further potentiodynamic polarization method was used to describe the corrosion behavior of the un-nitrided and nitrided alloy. It has been found that the Vickers hardness (HV) and corrosion resistance values of the nitrided layers increase with increasing plasma power while the wear rates of the nitrided layers reduce by two orders of magnitude as compared to those of the un-nitrided layer. This improvement in surface properties of the intermetallic alloy is due to ...

International Nuclear Information System (INIS)

We have developed a chemical process for incorporating copper into indium gallium selenide layers with the goal of creating a precursor structure for the formation of copper indium gallium diselenide (CIGS) photovoltaic absorbers. Stylus profilometry, EDX, Raman spectroscopy, XRD and SIMS measurements show that when indium gallium selenide layers are immersed in a hot copper chloride solution, copper is incorporated as copper selenide with no increase in the thickness of the layers. Further measurements show that annealing this precursor structure in the presence of selenium results in the formation of CIGS and that the supply of selenium during the annealing process has a strong effect on the morphology and preferred orientation of these layers. When the supply of Se during annealing begins only once the substrate temperature reaches ? 400 deg. C , the resulting CIGS layers are ...

International Nuclear Information System (INIS)

The layer-by-layer (LBL) self-assembly has been extensively used as a simple and effective method for the preparation of polyelectrolyte multilayer films. In this work, we utilized this unique method to prepare polyimide precursor/layered double hydroxide (LDH) ultrathin films. Well-crystallized Co-Al-CO_3 LDH and subsequent anion exchanged Co-Al-NO_3 LDH were prepared and characterized by scanning electron microscopy and X-ray diffraction (XRD). By vigorous shaking of the as-prepared Co-Al-NO_3 LDH, positively charged and exfoliated LDH nanosheets were obtained. Atomic force microscopy and XRD investigations indicated the delamination of LDH nanosheets. The precursor of polyimide, poly(amic acid) tertiary amine salt (PAS) was prepared by the polycondensation of dianhydride and diamine, and subsequent amine salt formation. By using the LBL method, heterogeneous ultrathin films of PAS and LDH were prepared. The formation of the ordered ...

Science.gov (United States)

Target vessel materials used in spallation neutron source will be exposed to proton and neutron irradiation and mercury immersion environments. In order to evaluate the surface degradation of the vessel candidate materials due to such environment, the triple-ion beam irradiation taking the spallation reaction into account and mercury immersion tests were carried out. Mechanical properties of the gradient surface layer were evaluated by the inverse analysis with multi-layer model that considers distribution of surface characteristic was applied to the load and depth curves measured by using the instrumented indentation machine. Transmission electron microscopic observations were performed to evaluate the changes of microstructure in irradiated surface layer using focused ion-beam cut micro-specimen. The mechanical properties distributions in the surface layer were evaluated quantitatively and the changes ...

International Nuclear Information System (INIS)

A highly reliable screening method was developed for the determination of lead in tin plated layers and tin-bismuth plated layers. The contents of lead in the layers of the various samples were determined by inductively coupled plasma optical emission spectrometry. The calibration curve for lead in the tin and tin-bismuth plated layers by using WD-XRF exhibited linear correlation from 130 #mu#g/g to 2070 #mu#g/g. Calibration curve of lead normalized with Pb-L#alpha#/Sn-K#alpha# intensity was more linear, and this method was possible to evaluate very small sample. The calibration curve for lead in the tin plated layers by using ED-XRF was good linearly, but it for lead in the tin-bismuth plated layers was affected by Pb-L#alpha# spectrum and Bi-L#alpha# spectrum overlap each other. It was effective for decreasing affect of Bi-L#alpha# spectrum by using curve ...

Energy Technology Data Exchange (ETDEWEB)

Thin passive films formed on highly corrosion-resistant type-312L stainless steel, containing 20 mass% chromium and 6 mass% molybdenum, in 2 mol dm{sup -3} HCl solution at 293 K have been analyzed by glow discharge optical emission spectroscopy (GDOES). The stainless steel does not suffer pitting corrosion even in this aggressive solution, showing a wide passive potential region. The depth profiles obtained clearly show a two-layer structure of the air-formed and passive films: an outer iron-rich layer and an inner layer highly enriched in chromium. Alloy-constituting molybdenum is deficient in the inner layer of the passive films and is enriched in the outer layer, particularly at the active dissolution potential. The molybdenum species in the outer layer may retard the active dissolution of stainless steel, promoting the formation of stable passive films ...

Energy Technology Data Exchange (ETDEWEB)

An approximate analyzing model was developed to predict the azimuth of zigzag streamline, the distribution ratio between two neighboring layers and the radial distribution among the layers of the gas passing through the shaft of blast furnace loaded in layers. The theoretical basis of the approximate analysis is composed of the material balance derived from the assumption that any stream line surrounded with two streamlines is isolated and no material transfer occurs through the tube wall, and of the energy theory that the stream tube and passage are formed so that the total pressure drop in the whole system is the minimum. The effects of the apparent angle of repose between two layers, the packing volume and the passage resistance on the non-uniform flow in the layer were evaluated on the basis of the model. The result calculated by the approximate analysis agrees with the result ...

Science.gov (United States)

The properties of the mixing layer in dynamic systems were studied by the example of a mathematical model of the cubic image type. Its role in the generation of information and the evolution of its significance was shown. At the moment of generation, information is of zero significance, and this significance then increases. A criterion of efficiency was proposed, and the optimum moment of making a decision in creative work was determined. It was shown that the increase in the variability of the parameters of a living system upon entry into the mixing layer and its decrease upon exit can serve as objective indicators of the transition of the system from one dynamic regime (attractor) to another. PMID:12723364

Science.gov (United States)

This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 ..mu..m and Al/sub 0.1/Ga/sub 0.9/P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.

International Nuclear Information System (INIS)

Extended X-ray absorption fine structure (EXAFS) measurements of bismuth clusters in the temperature range of 23 -300 K have been performed using synchrotron radiation in order to investigate the size dependent phase transition. The inter-atomic distances around 3.0 A and 3.6 A are attributed to the nearest neighbors within the layer and between layers, respectively. EXAFS functions were analysed by the curve fitting method within a symmetric distribution approximation. The nearest neighbor distance of the 0.5 nm thick films is shorter than that of the 300 nm thick films at all the temperatures, which is related to the reduction of the inter-layer correlation.

International Nuclear Information System (INIS)

The changes in microstructure of a specially prepared boron nitride (BN) film as a function of film depth were studied by high resolution transmission electron microscopy (HRTEM) and other materials analysis tools. These changes were then correlated to the changes in processing parameters during film growth. The analyzed film was fabricated by the four-step ion-assisted deposition procedure known to be effective in film-stress engineering for the formation and retention of a thick cubic BN (cBN) layer with a three-step buffer-layer deposition. In this deposition, the energy of the ions assisting cBN formation was increased stepwise from 200 to 280, and then to 360 eV [S.F. Wong, C. W. Ong, G.K.H. Pang, K.Z. Baba-Kishi, W. M. Lau, J. Vac. Sci. Technol. A 22 (2004) 676]. The nominal thickness of the cBN layer was 650 nm and that for each of the three buffer layers was about 160 nm. Both the HRTEM and ...

British Library Electronic Table of Contents (United Kingdom)

The acoustic hyperlens can be realized by an alternating layered structure of water and fluid with negative mass density. Based on this alternating layered principle, we propose that an acoustic metamaterial consisting of three layers in water background can be designed to replace the fluid with negative mass density. The effective mass density and bulk modulus of the system which is composed of acoustic metamaterial and water are functions of the frequency. The effective mass density of such a system is close to the negative mass density of the fluid at a specific frequency; thus an acoustic metamaterial hyperlens can be achieved.

Science.gov (United States)

Orchestration Layer. Service Delivery . Datacenter. Infrastructure. Systems call API. E2E automated. Automate service-levels. Analyze & ...

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Ultraviolet photoelectron spectra were measured for vanadyl phthalocyanine (VOPc) ultrathin films prepared on graphite to study effects of the molecular orientation and the electric dipole layer on the organic electronic states. VOPc has a permanent electric dipole perpendicular to the molecular plane, hence a well-defined electric dipole layer could be intentionally prepared by using the oriented monolayer. The observed binding-energy difference of the highest occupied molecular orbital (HOMO) bands between the oriented monolayer and the double layer was found to agree with the vacuum level shift, leading to a conclusion that the molecular energy level with respect to the substrate Fermi level is changed when the molecule is in the electric dipole layer.

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For a solar cell, in order to minimize the loss of incident light, transparent glass or plastic material is used at the incident part. When a solar cell is watched from the light incident part, a silicon base material is directly observed with either block or brown color only. This invention enables a solar cell to give brighter color on the incident surface by placing a reflective film which reflects only the light of specific wavelength, without reducing the efficiency of the solar cell. This reflective film consists of multi-layered dielectric with 12 layers and alternative combination of highly refractive and less refractive substances. Highly refractive layer is Y/sub 2/O/sub 3/ with refractive index 1.74 and the less refractive layer is SiO/sub 2/ with refractive index 1.45. (5 figs)

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In this article, the ability of artificial neural networks in prediction of separation in steady two dimensional boundary layer flows is studied. Data for network training is extracted from numerical solution of an ODE obtained from Von Karman integral equation with approximate one parameter Pohlhousen velocity profile. As an appropriate neural network, a two layer radial basis generalized regression artificial neural network is used. The results shows good agreements between the overall behavior of the flow fields predicted by the artificial neural network and the actual flow fields for some cases. The method easily can be extended to unsteady separation and turbulent as well as compressible boundary layer flows. (author)

International Nuclear Information System (INIS)

Agricultural practices frequently cause the development of a soil compacted layer below the surface. These compacted layers restrict the root penetration into deeper layers of soil, in search for water. It is proposed to monitor, using Non Destructive Test, the roots growth due to the planting of standard seeds in different agricultural soils, in function of their compactness and humidity. It will be used the neutrons beams derived from an irradiation channel called J-9 of the Reactor Argonauta (IEN/CNEN), so that the neutron radiographic images of the soil-plant system can be obtained. Each root can be evaluated for its ability to penetrate into compacted soil layers; this fact would mean an optimization of agricultural harvests. (author)

Science.gov (United States)

... Separation," AGARD,Rept 272, April 1960, ... Leading Edge Effect on Supersonic Boundary Layer Flow." ... of Gas Injection in Separated Flows." TCEA, ...

British Library Electronic Table of Contents (United Kingdom)

Chitosan (Ch) microspheres have been developed by precipitation method, cross-linked with glutaraldehyde and used as a template for layer-by-layer (LBL) deposition of two natural polyelectrolytes. Using a LBL methodology, Ch microspheres were alternately coated with hyaluronic acid (HA) and Ch under mild conditions. The roughness of the Ch-based crosslinked microspheres was characterized by atomic force microscopy (AFM). Morphological characterization was performed by environmental scanning electron microscopy (ESEM), scanning electron microscopy (SEM) and stereolight microscopy. The swelling behaviour of the microspheres demonstrated that the ones with more bilayers presented the highest water uptake and the uncoated cross-linked Ch microspheres showed the lowest uptake capability. Micros...

Science.gov (United States)

This site explains how temperature, pressure, and salinity work together to determine the density of ocean water. The three density layers of the ocean are described by means of text description and a graphic illustration.

International Nuclear Information System (INIS)

Scanning thermal microscopy (SThM) was used to map thermal conductivity images in an ultrafine-grained copper surface layer produced by surface mechanical attrition treatment (SMAT). It is found that the deformed surface layer shows different thermal conductivities that strongly depend on the grain size of the microstructure: the thermal conductivity of the nanostructured surface layer decreases obviously when compared with that of the coarse-grained matrix of the sample. The role of the grain boundaries in thermal conduction is analyzed in correlation with the heat conduction mechanism in pure metal. A theoretical approach, based on this investigation, was used to calculate the heat flow from the probe tip to the sample and then estimate the thermal conductivities at different scanning positions. Experimental results and theoretical calculation demonstrate that SThM can be used as a tool for the thermal property and ...

Science.gov (United States)

... DV Holliday BAE SYSTEMS Applied Technologies, IES/ITS Analysis and Applied Research 4545A Viewridge Avenue San Diego, CA 92123 phone ...

International Nuclear Information System (INIS)

We described the use of silica nanoparticles as building blocks for the immobilization of electrogenerated chemiluminescence (ECL) reagent Ru(bpy)_3"2"+ and the fabrication of layer-by-layer assembly film by alternating the deposition of the Ru(bpy)_3"2"+-doped silica nanoparticles and Au nanoparticles. UV-vis absorption spectroscopy, scanning electron microscopy (SEM), cyclic voltammetry and ECL were used to characterize the uniform growth of the multilayer film. Since Ru(bpy)_3"2"+ could still maintain its ECL property when doped into the silica nanoparticles, the as-prepared multilayer film could be used as an effective ECL sensor, and the sensor showed high sensitivity and good stability.

British Library Electronic Table of Contents (United Kingdom)

Sensory stimuli are encoded differently across cortical layers and it is unknown how response characteristics relate to the morphological identity of responding cells. We therefore juxtasomally recorded action potential (AP) patterns from excitatory cells in layer (L) 2/3, L4, L5 and L6 of rat barrel cortex in response to a standard stimulus (e.g. repeated deflection of single whiskers in the caudal direction). Subsequent single-cell filling with biocytin allowed for post hoc identification of recorded cells. We report three major conclusions. First, sensory-evoked responses were layer- and cell-type-specific but always

International Nuclear Information System (INIS)

(Feb 1978). USSR Kolupaev, BS Dem'yanyuk, BP Kim, V.Ya. Rovenskij

Energy Technology Data Exchange (ETDEWEB)

A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. In this paper we compare its optical and electrical characteristics with the two more common profiles: the U- and V-shapes. As predicted by the simulations, the new profile combines the advantages of both profiles. Like the V-shape, the exponential shape reduces the amount of Ge in the i-layer, decreasing both the space charge defect density inside the i-layer and the recombination losses. It also improves the electric field. At the same time, the exponential shape generates the same current density as the U-shape.

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In order to obtain highly reliable InGaP/InGaAlP inner stripe (IS) lasers, the authors have clarified the relation between the maximum CW operation temperature and other laser characteristics, such as the pulsed threshold current, characteristic temperature, series resistance, and thermal resistance. The Al composition of the cladding layer, the carrier concentration of the p-cladding layer, and the thicknesses of the active layer and cladding layer have been optimized. It was found that an Al composition of 0.7 was the most suitable for the cladding layer, and the optimized carrier concentration was 4 x 10/sup 17/ cm/sup -3/. A maximum temperature of 90/sup 0/C was obtained for a 0.1 /mu/m active layer thickness and a 0.6 /mu/m cladding layer thickness. This is the highest value for InGaP/InGaAlP IS lasers, to our knowledge. In the case of ...

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An inspection system was developed for spent fuel assemblies of PWR so that to check their general state, perform dimensional control and measure oxide layer thickness of peripheral rods. (orig./HP)

CERN Document Server

Many secure communication libraries used by distributed systems, such as SSL, TLS, and Kerberos, fail to make a clear distinction between the authentication, session, and communication layers. In this paper we introduce CEDAR, the secure communication library used by the Condor High Throughput Computing software, and present the advantages to a distributed computing system resulting from CEDAR's separation of these layers. Regardless of the authentication method used, CEDAR establishes a secure session key, which has the flexibility to be used for multiple capabilities. We demonstrate how a layered approach to security sessions can avoid round-trips and latency inherent in network authentication. The creation of a distinct session management layer allows for optimizations to improve scalability by way of delegating sessions to other components in the system. This session delegation creates a chain of ...

International Nuclear Information System (INIS)

... Industry, Material Science Research Laboratory, Yokosuka, Kanagawa (Japan)

Science.gov (United States)

This layer represents the different food storage facilities available at backcountry campsites along the coast of Kenai Fjords National Park. Site locations ... ...

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Solar cells consisting of polymer layers sandwiched between a transparent electrode on glass and a metal top electrode are studied using dynamic time-of-flight secondary ion mass spectrometry (TOF-SIMS) in dual-beam mode. Because depth profiling of polymers and polymer-metal stacks is a relatively new field the craters were thoroughly investigated by environmental SEM (ESEM), interferometry, surface profilometry and tapping mode AFM. A huge increase in crater bottom roughness was observed when starting from the aluminum top layer going in depth, resulting in a loss of depth resolution. It is shown that layer-to-layer diffusion and contaminants at buried interfaces can be extracted from the depth profiles when taking into account the loss of depth resolution.

International Nuclear Information System (INIS)

Channeling effect measurements have been employed to investigate radiation damage produced by 100-keV Ar ions in preferred oriented polycrystalline metal-silicide layers, such as Pd_2Si and NiSi_2 layers formed on single-crystalline Si. For room-temperature implantation, an amount of the damage in Pd_2Si layers was found to saturate at doses between 3 x 10"1"4 and 1 x 10"1"7 ions/cm"2, where the minimum aligned yield of 1.5-MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi_2 layers became amorphous at doses higher than 3 x 10"1"5 ions/cm"2. These results were confirmed by the reflection electron diffraction analyses.

International Nuclear Information System (INIS)

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at #lambda##approx#380 nm in the n-ZnO/ZnO nanodots-SiO_2 composite/p- Al_0_._1_2Ga_0_._8_8N heterojunction light-emitting diode. A SiO_2 layer embedded with ZnO nanodots was prepared on the p-type Al_0_._1_2Ga_0_._8_8N using spin-on coating of SiO_2 nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO_2 composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO_2 matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO_2 composite layer. The high quality of the n-ZnO layer was manifested by ...

Science.gov (United States)

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

International Nuclear Information System (INIS)

Molecular beam epitaxy (MBE) grown Ge nanodots are found to come in a clear trimodal island distribution of huts, pyramids, and domes when grown on (001)Si at 550 deg. C. The island types appear in this order as Ge coverage increases and for a certain coverage all three types are found to coexist at this growth temperature. Previously Ge nanodots have mostly been divided into huts and domes at growth temperatures below 600 deg. C, or pyramids and domes above 600 deg. C. The (105) faceted pyramidal and elongated huts and the multifaceted domes are well known, but a distinction has not previously been seen between huts and a separate size distribution of similarly (105)-faceted pyramidal nanodots twice the size of huts, at temperatures below 600 deg. C. The 20-25 nm wide huts also appear to be the smallest obtainable self-assembled Ge dots on (001)Si, in accordance with predictions based on Si_1_-_xGe_x nanodots on (001)Si. They are about a factor of two too large ...

International Nuclear Information System (INIS)

The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 deg. C and the time spent within 50 deg. C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 deg. C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have junction depth and sheet resistance appropriate to the ...

International Nuclear Information System (INIS)

A novel technique is proposed for the growth of an InN film on a GaN/Al2O3(0001) template by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). The method involves 1) InN growth under an In-rich condition and 2) additional nitrogen radical irradiation after the InN growth under an In-rich condition. Excess In that appeared on the InN surface in the InN growth under an In-rich condition is transformed to InN by the additional nitrogen radical irradiation. The effective V/III ratio is easily controlled by monitoring the intensity in a reflection high-energy electron diffraction (RHEED) pattern. The growth of the InN film by repeating the InN growth under an In-rich condition and the additional nitrogen radical irradiation is also demonstrated. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

International Nuclear Information System (INIS)

Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-T_c superconducting lines as narrow as 0.8 #mu#m have been fabricated from epitaxial YBa_2Cu_3O_7 _- _y films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 #mu#m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 x 10"4 A/cm"2 at 77.3 K. Maskless etching was carried out using 130-keV au"+ focused ion-beam (FIB) with a 0.1-#mu#m-diameter beam. A 50-nm-thick film was patterned into 0.3-#mu#m-wide lines at a dose of 5 x "1"6 ions/cm"2. In comparison with Ar IBE, Cl_2 reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with 300-keV Si"+ "+ FIB also indicated the possibility to produce submicrometer patterns by selectively modifying film properties from superconductive to normal or insulting.

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with room-temperature hole concentrations varying from ...

International Nuclear Information System (INIS)

Excitonic transitions in metalorganic vapor phase epitaxially grown In_xGa_1_-_xP/In_0_._4_8(Al_0_._7Ga_0_._3)_0_._5_2P strained single quantum-well structures are characterized using low-temperature photoluminescence and photoluminescence excitation (PLE) spectroscopies. The structures consist of several uncoupled quantum wells with thicknesses between 1.2 and 11.3 nm, and compositions x of 0.48 (nominally lattice matched) and 0.56 (#approx#0.6% biaxial compressive strain). The photoluminescence spectra exhibit intense peaks over the wavelength range 550--650 nm, with linewidths between 7 and 23 meV depending on the well thickness. The PLE spectra reveal strong heavy-hole and light-hole transitions, as well as higher-order (n=2) transitions in the thicker wells. The heavy-hole/light-hole splitting shows little dependence on well thickness in the strained structures, indicating a relatively large conduction band offset of #DELTA#E_C#approx#0.75#DELTA#E_G.

International Nuclear Information System (INIS)

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature annealing of the implanted Pd"2Si films. (author).

CERN Document Server

Kelvin-Helmholtz instability of short gravity waves is examined in order to explain the recent findings of the decrease in momentum transfer from hurricane winds to sea waves. A three-fluid configuration of a foam layer between the atmosphere and the ocean is suggested to provide signifficant stabilization of the system and shifting the marginal critical wavelength to the shortwave part of the spectrum. It is conjectured that such stabilization leads to the observed drag reduction. The high contrasts in three fluid densities provide a universal mechanism for stabilizing surface perturbations.

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The Montreal Protocol provides the international community with an effective equitable and dynamic mechanism for protecting the ozone layer. The paper uses the Protocol's negotiating history to describe how and why agreement on a particular issue was reached and provides an in-depth analysis of the Protocol's most innovative provisions. The paper discusses international implementation of the Protocol. It concludes with a brief description of recent developments leading up to the Protocol's possible modification in June 1990. (14 refs.).

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Simulation of the skim-off method for radon measurement by activated charcoal has been carried out by the finite elements method. The variation of radon concentration with peak appearance has been simulated. The thickness of the layer of charcoal removed after exposure and the time of peak appearance have been varied. For the charcoal and canister geometry used, the best results were found when the thickness of the layer removed was 1.72 mm.

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Non-destructive methods for measuring the remaining anticorrosive or antioxidative ability of coatings are investigated. For anticorrosive chromium coatings the increasing ferromagnetism caused by loss of chromium is measured by a permeability probe. Measured values on blades after operation are correlated with the progress of corrosion as determined by metallographic methods. For antioxidative aluminum coatings the diminishing layer thickness is taken as indication for the exhaustion of their protection ability. The layer thickness is measured eddy current probes, especially developed for this application.

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A method for bistable storage of binary optical information includes an antiferroelectric (AFE) lead lanthanum zirconate titanate (PLZT) layer having a stable antiferroelectric first phase and a ferroelectric (FE) second phase obtained by applying a switching electric field across the surface of the device. Optical information is stored by illuminating selected portions of the layer to photoactivate an FE to AFE transition in those portions. Erasure of the stored information is obtained by reapplying the switching field.

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A number of properties in steel components are detrimentally influenced when exposed to hydrogen environments. Under these conditions, atomic hydrogen is adsorbed on the steel surface, then absorbed and preferentially transported towards tri-dimensional stressed regions in the crystal lattice and into defects such as interfaces or dislocations. The hydrogen embrittlement susceptibility is strongly influenced by various microstructural parameters including the type of inclusions, steel composition and heat treating conditions. One of the alternatives employed in minimizing hydrogen embrittlement is the use of surface barriers for hydrogen permeation. In particular, the presence of surface nitride layers in steels can be considered as an effective barrier. Nitride steel surface layers can be produced by plasma nitriding with the concomitant benefits of improved surface hardness, as well as superior wear and fatigue resistance. Accordingly, in ...

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Improvements in critical current capacity for superconducting film structures are disclosed and include the use of a superconducting RE-BCO layer including a mixture of rare earth metals, e.g., yttrium and europium, where the ratio of yttrium to europium in the RE-BCO layer ranges from about 3 to 1 to from about 1.5 to 1.

International Nuclear Information System (INIS)

Cyclic strength of #alpha#+#beta#-titanium alloy BT3-1 is studied under load frequencies of 33 and 300 Hz. The increase in the cyclic strength with growing frequency is caused by formation of FCC interphase layers of titanium hydrides. Their formation is one of possible ways of raising the fatigue strength of titanium alloys. Peculiarities of FCC interlayer formation in #alpha#+#beta# phases under loading frequency variation are revealed.

International Nuclear Information System (INIS)

By means of ESCA the composition and the thickness of passive films formed on austenitic stainless steels were investigated after the attack of nitric acid at various temperatures and acid concentrations. The outermost layers of the oxide film consist of SiO_2, then a layer rich of Cr-oxid follows, containing also some Mo in the four- and sixvalent state. Ni does not contribute to the oxide film. Cr is also enriched in the metal just below the oxide film. (orig.).

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The surface of Si and thin layers of Pd{sub 2}Si on Si have been studied by low-energy He{sup +} ion scattering. The occurrence of the observed low-energy tails is attributed to reionization at the surface of He neutrals scattered from subsurface layers. It is shown that the tails provide in-depth information. (orig.).

Energy Technology Data Exchange (ETDEWEB)

This work was initiated to examine the effect of frequency and treatment temperature on the formation of nitrided layers and surface characteristics during plasma nitriding. Plasma nitriding experiments were performed with 316L austenitic stainless steel at the temperatures 400 .deg. C and 500 deg. C using a pulsed d.c. plasma with various frequencies in an atmosphere of N{sub 2}-H{sub 2} gas mixture. The microstructure and thickness of the nitrided layer and morphology of the nitrided surface were investigated using OM, SEM, XRD, EDS and AFM. XRD patterns revealed that the surface layer formed at 400 deg. C consisted of S phase only and CrN+Fe{sub 4}N nitrides at 500 .deg. C and no change of phase composition with frequency was observed. The compound layer thickened slightly with increased frequency. Also, the surface roughness increased as the frequency of the pulsed plasma increased from 50 to ...