International Nuclear Information System (INIS)

The coupled neutron-gamma cross section libraries BUGLE-80 and SAILOR are compared, with focus on gamma production and transport and its sensitivity to the thermal component of the neutron flux. In addition, the importance of the prompt versus delayed components of the gamma source is addressed. Although BUGLE-80 shows some discrepancies in the core region, the two libraries demonstrate similar capability in the vicinity of the pressure vessel and beyond. The delayed fission product gammas from the core have little impact on the local gamma fluxes beyond the pressure vessel. Although thermal neutron capture is the dominant component of the gamma source, there is little sensitivity of the gamma source to uncertainties in the thermal neutron cross sections, due to compensating effects which tend to keep the thermal neutron ...

International Science & Technology Center (ISTC)

Development of Technologies for Boron-10 Isotope Modified Boron-containing Materials Production and their Properties Investigation.

Energy Technology Data Exchange (ETDEWEB)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10{sup 19} n {omega} cm{sup -1}. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual {sup 32}P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

Energy Technology Data Exchange (ETDEWEB)

The neutron detector is cased in a metal envelop and has one detector with a very sensitive fission chamber and a second detector with a fission chamber less sensitive that the first one and a boron coated ionisation chamber for reducing gamma radiation detection.

Energy Technology Data Exchange (ETDEWEB)

A detector head for in situ inspection of irradiated nuclear fuel assemblies submerged in a water-filled nuclear fuel storage pond. The detector head includes two parallel arms which extend from a housing and which are spaced apart so as to be positionable on opposite sides of a submerged fuel assembly. Each arm includes an ionization chamber and two fission chambers. One fission chamber in each arm is enclosed in a cadmium shield and the other fission chamber is unshielded. The ratio of the outputs of the shielded and unshielded fission chambers is used to determine the boron content of the pond water. Correcting for the boron content, the neutron flux and gamma ray intensity are then used to verify the declared exposure, cooling time and fissile material content of the irradiated fuel assembly.

Energy Technology Data Exchange (ETDEWEB)

Radiation portal monitors used for interdiction of illicit materials at borders include highly sensitive neutron detection systems. The main reason for having neutron detection capability is to detect fission neutrons from plutonium. The currently deployed radiation portal monitors (RPMs) from Ludlum and Science Applications International Corporation (SAIC) use neutron detectors based upon 3He-filled gas proportional counters, which are the most common large neutron detector. There is a declining supply of 3He in the world, and thus, methods to reduce the use of this gas in RPMs with minimal changes to the current system designs and sensitivity to cargo-borne neutrons are being investigated. Four technologies have been identified as being currently commercially available, potential alternative neutron detectors to replace the use of 3He in RPMs. These technologies are: 1) Boron trifluoride (BF3)-filled proportional counters, 2) Boron-lined ...

Energy Technology Data Exchange (ETDEWEB)

Short communication

KoreaScience (Korea)

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International Nuclear Information System (INIS)

Several configurations of moderating and shielding materials have been designed and measured on the LVR-15 reactor for boron neutron capture therapy (BNCT) purposes. To determine the neutron and gamma ray space-energy distributions in the cylindrical geometry, the two-dimensional code DOT with the coupled neutron-gamma data library DLC-36 was used. The experimental verification of the beam parameters was performed in the LVR-15 reactor thermal column empty space with layers of graphite, aluminium, alumina, lead and bismuth. Attention was paid to establishing techniques and instrumentation for monitoring the neutron and gamma ray dose and beam quality. The thermal and epithermal flux densities were measured by activation foils, the neutron spectrum was determined with a Bonner spectrometer and gamma ray background with a scintillation spectrometer. The distribution of thermal ...

Energy Technology Data Exchange (ETDEWEB)

A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in ...

International Nuclear Information System (INIS)

The published literature is reviewed and supplemented by current information from the author's laboratory, to show the influence of various compositional, heat treatment and thermomechanical factors on the structural characteristics of Alloy 800. The features discussed include carbon, aluminium, titanium and boron, solution treatment, ageing treatments with and without applied strain, and cold working. Examples of the aspects reviewed include the effect of heat treatment and service or testing temperature on the austenite grain size, and the relative importance of M_2_3C_6 and TiC, the influence of carbon level on gamma prime, the effect of residual or steady stress combined with time at temperature on changes in carbide or gamma prime morphology, and on the appearance of sigma or other intermetallic phases. The questions posed by these features are discussed generally, in terms of their effect on the mechanical properties ...

International Nuclear Information System (INIS)

In Pressurised heavy water reactors (PHWRs), neutron poison in the moderator is used to compensate the excess reactivity present in the core on different occasions such as xenon decay during synchronization just after poison out period or start ups from xenon free conditions. It is also used in secondary shutdown system (SDS-2), where required amount of neutron poison is injected directly into the moderator within 2.5 seconds. Further, it is also used for over poisoning the moderator to achieve the guaranteed shutdown state when the regular shutdown systems are taken for maintenance. Generally, two types of moderator poisons are used in power reactors to balance the reactivity of the core and they are boron and gadolinium. Gadolinium is used in the form of gadolinium nitrate (Gd(NO3)3.6H2O). The paper gives the details of estimation of reactivity coefficients of gadolinium for 540 MWe PHWR for different operating conditions. These neutron ...

International Nuclear Information System (INIS)

In-reactor testing of bolt-loaded compact tension specimens was performed in 360 C water. New data confirms previous results that high irradiation levels reduce SCC resistance in Alloy X-750. Low boron heats show improved IASCC (irradiation-assisted stress corrosion cracking). Alloy 625 is resistant to IASCC. Microstructural, microchemical, and deformation studies were carried out. Irradiation of X-750 caused significant strengthening and ductility loss associated with formation of cavities and dislocation loops. High irradiation did not cause segregation in X-750. Irradiation of 625 resulted in formation of small dislocation loops and a fine body-centered-orthorhombic phase. The strengthening due to loops and precipitates was apparently offset in 625 by partial dissolution of #gamma# precipitates. Transmutation of boron to helium at grain boundaries, coupled with matrix strengthening, is believed to be responsible for ...

International Nuclear Information System (INIS)

The #alpha# radiation dose to the lungs of people who live in buildings constructed of some granites, low density concretes, and gypsum boards is higher than for residents of most other types of dwellings due to the air-borne progeny of radon. There is evidence that sealing the interior surfaces with epoxy paint, for example, can reduce the #alpha# dose to the lung significantly without a compensating increase in whole-body exposure to the #gamma#-rays from radon progeny. Based on the incidence rates for lung cancer in uranium miners, a concentration of radon of the order of 1 to 5 pCi/l. appears to be a reasonable limit for 'lifetime' exposure indoors for 'typical' home ventilation conditions. (author).

Science.gov (United States)

A computer-based beam dosimetry measurement system for boron neutron capture therapy provides accurate, sensitive, and rapid readout and recording of all beam dose components, epithermal and thermal neutron flux, and gamma-ray dose rate. This dosimetric system includes input from the characterization of the epithermal neutron beam developed at the Massachusetts Institute of Technology, actual BPA pharmacokinetic data from a specific human subject being irradiated, output of MacNCTPLAN, a treatment planning system developed by the authors group, and input from the five on-line beam detectors. The purpose of this system and associated readout systems is to ensure that the desired dose is delivered to the subject within acceptable dose tolerances, e.g., {+-}5% of the target dose, and that any perturbations in the neutron beam that may occur during irradiation can be rapidly evaluated and the appropriate measures taken.

Energy Technology Data Exchange (ETDEWEB)

Radon concentration measurements were performed for one year in 12 different boron, chromium and coal underground mines in Western Turkey. Lucas cells and nuclear track detectors were used for the measurements of radon and its decay products. The effects of parameters, such as type of mine, gallery depth and ventilation rate, on the radon concentration in mine air were examined. The radiation exposure doses of miners due to the inhalation of radon and radon daughters were determined. Gamma survey measurements were also realized together with radon measurements and the total effective dose equivalents in mSv y{sup -1} were estimated.

Energy Technology Data Exchange (ETDEWEB)

A computer controlled digital system, Fuji Computed Radiography (FCR) is capable of providing more stable output image than conventional screen/film system. So FCR would be an ideal system for the detection of pneumoconiosis due to the constant high quality of the output films. We tried to find the optimum image processing to compensate the small size (1/2 in length of a full-size radiograph) of the output image of digital radiography. The best result for FCR was given with gamma 0.85 and 0.30 enhancement of response at spatial frequency of 0.085 cycle/mm. On the other hand, the digitally processed FCR size ILO standard films, the characteristics of which is different from FCR output films, proved to be most preferable when the image processing is made with gamma 0.85 and 0.25 enhancement at spacial frequency of 0.17 cycle/mm. If the above mentioned image processings are adopted, FCR can be used for the diagnosis of ...

Energy Technology Data Exchange (ETDEWEB)

This work concerns the study of the nuclear superdeformation phenomenon in the rare earth region (A {approx} 150). The superdeformed (SD) states in Gadolinium and Dysprosium isotopes were produced via heavy-ion induced reactions and studied with the (EUROGAM EUROpean GAmma-ray Microscope) gamma multidetector array. Precise level attenuation method (DSAM). From the derived quadrupole moments, we find large differences in deformation between the yrast bands in neighbour nuclei explained in terms of the case of nuclei corresponding to an axis ratio of 2:1, the shell gaps are not fixed at a specific particle number and deformation. Furthermore the present results indicate that the deformations associated with identical bands are different supporting the picture that mass and deformation changes tend to compensate in SB bands with the same moments of inertia. (author). 114 refs.

UK PubMed Central (United Kingdom)

Previous work has provided evidence that plants may require boron to maintain adequate levels of pyrimidine nucleotides, suggesting that the state of boron deficiency may actually be one of pyrimidine...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

This report describes the test of a dynamic phase compensation unit for a wind turbine with directly connected induction generators. The compensation unit is based on thyristor switched capacitors, where conventional wind turbine compensations use mechanical contactors to switch the capacitors. The influence on power quality analysed, and influence on component lifetime is discussed. Besides, simulation models in Matlab/Simulink are presented, including a flicker meter model. (au)

KoreaScience (Korea)

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KoreaScience (Korea)

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Science.gov (United States)

... by the boron doping in most of the alloys except for Al66Mn9Zr25 + 50 ppm B alloy; permanent deformation at ultimate compressive strength is not ...

British Library Electronic Table of Contents (United Kingdom)

A new method of the synthesis of high molecular polybutylene terephthalate (PBT) is developed with the use of Irganox 1010, tris(nonylphenyl) phosphite and hypophosphite as stabilizers and boron nitride or boron oxide as a catalyst is proposed.

Science.gov (United States)

... Advanced thermal storage systems based on very high temperature solid materials such as boron carbide or graphite have been investigated for ...

Energy Technology Data Exchange (ETDEWEB)

Short communication.

International Nuclear Information System (INIS)

Short communication.

Science.gov (United States)

Not Available

International Nuclear Information System (INIS)

By treatment of ?-substituted acetylacetone derivatives with boron trifluoride etherate a series of earlier unknown boron difluoride complexes is obtained. The series includes binuclear complexes containing boron in the chelate fragment connected via sulfur or selenium atom. Gas chromatographic and spectral characteristics of the obtained compounds were investigated. By means of chromato-mass spectrometry their reaction with hydrazine in acidic and alkaline media was studied

Energy Technology Data Exchange (ETDEWEB)

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from {ital ab initio} calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800{degree}C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. {copyright} {ital 1998 American Institute of ...

Energy Technology Data Exchange (ETDEWEB)

The effects of boron addition on weldability and high temperature strength properties were investigated for Hastelloy alloy XR used TIG welding process with the filler metals. Four versions of filler metals with different boron contents were used. The results obtained may be summarized as follows: (1) The influence of boron addition on weldability was not observed within the range of the present experiment. (2) The result of chemical analysis for deposited metals showed that boron desorption did not occur during welding. (3) The tensile properties of weldments, particularly in high temperature ductility were raised with increasing boron content. (4) In the creep properties of weldments, creep rupture life increased with increasing boron content under the given stress conditions. (author).

UK PubMed Central (United Kingdom)

BackgroundIntrafractional motion results in local over- and under-dosage in particle therapy with a scanned beam. Scanned beam delivery offers the possibility to compensate target...Full Text Available

Science.gov (United States)

runs are necessary, provision shall be made for expansion joints, motion of the units, or similar compensation to ensure that no excessive strains are ...

Energy Technology Data Exchange (ETDEWEB)

Several models have been proposed for the simulation of boron diffusion during annealing after implantation in silicon. It has been shown that transient enhanced diffusion (TED) tends to disappear at sub-keV implant energies. Under these conditions boron concentration is higher than the boron solubility limit value, precipitation phenomena occur. Extended defects ({l_brace}3 1 1{r_brace}, EOR) formation and boron precipitation affect both the redistribution during the annealing and activation of the boron. For these reasons, we have investigated the diffusion of low energy boron implanted in crystalline silicon and tested a complete simulation program which takes into account the effects of type I defects as a sink for self-interstitials and of boron precipitation. Experimental results have been simulated and consistent parameters have been ...

International Nuclear Information System (INIS)

A boron containing cement, which can be used as nuclear shielding material, is produced at pilot plant scale applying two different methods. In the first method, the raw mixture of a normal portland cement is mixed with pre-calcined colemanite, a calcium borate mineral, and clinkerized in a rotary kiln (borated-clinker). In the second method, the colemanite is mixed with an admixture, which contains mainly limestone and marl, and burnt in the rotary kiln to obtain a borated-lime composite. The borated-lime composite is then added to the normal portland cement clinker up to 2% B_2O_3 content for shielding purpose. The results have shown that the borated-clinker contained untolerable amount of free lime resulting in a decrease in compressive strength. The addition of the borated-lime composite to the normal portland cement clinker up to 1% B_2O_3 content did not alter the setting time and the volume expansion properties. The reduction in the compressive strength was ...

International Nuclear Information System (INIS)

The production of three vector bosons in #gamma# #gamma# collisions studying the reactions #gamma# + #gamma# #-># W"+ + W"- + Z"0 and #gamma# + #gamma# #-># W"+ + W"- + #gamma#. 12 refs., 4 figs., 2 tabs.

International Nuclear Information System (INIS)

The beam-beam interaction in the Tevatron produce the betatron tune spread in each bunch and a bunch-to-bunch tune spread. The tune spread sets limits on bunch intensity and luminosity. The beam-beam effects for antiprotons are usually more severe since the proton bunch population is higher. The beam-beam effects for antiprotons can in principle be compensated with the use of an electron beam with a corresponding charge density. The status of studies of possibilities of the beam-beam compensation is reviewed in this paper.

Energy Technology Data Exchange (ETDEWEB)

The Recycler ring magnet will be made of Strontium ferrite permanent magnets. A strontium ferrite permanent magnet without compensation has a temperature coefficient of -0.2 % in dB/dT. To compensate this effect, we are utilizing 30 % Ni 70 % Fe alloy, a temperature compensation ferromagnetic material with a low Curie point. To search for optimum commercially available material and optimum condition, we made a couple of simple model magnets, and tested with several different compensating material. The test results are reported and its optimal conditions are shown. Several different configurations were tested including a possible 2 kG magnet configuration.

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) of boron in silica after low energy boron implantation and annealing was investigated using boron-doping superlattices (DSLs) grown by low temperature molecular beam epitaxy. Boron ions were implanted at 5, 10, 20, and 40 keV at a constant dose of 2{times}10{sup 14}/cm{sup 2}. Subsequent annealing was performed at 750{degree}C for times of 3 min, 15 min, and 2 h in a nitrogen ambient. The broadening of the boron spikes was measured by secondary ion mass spectroscopy and simulated. Boron diffusivity enhancement was quantified as a function of implant energy. Transmission electron microscopy results show that {l_angle}311{r_angle} defects are only seen for implant energies {ge}10 keV at this dose and that the density increases with energy. DSL studies indicate the point defect concentration in the background decays much slower ...

International Nuclear Information System (INIS)

This paper describes a system for fast mass spectrometric characterization of high-temperature outgassing measurements and measuring the total quantity of gas evolved for boron nitride. 2 references, 1 figure, 2 tables.

International Nuclear Information System (INIS)

In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10"1"4 ions/cm"2. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI_2) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, ...

Energy Technology Data Exchange (ETDEWEB)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to ...

Energy Technology Data Exchange (ETDEWEB)

Short communication.

International Nuclear Information System (INIS)

The possibility to transform the future linear e"+e"-colliders into the #gamma#e and #gamma##gamma# colliders with approximately the same energies and luminosities was shown earlier. Their properties are compared from the point of view of possible physical investigations on them. 10 refs.; 1 tab.

International Nuclear Information System (INIS)

The adsorptive removal of boron from aqueous solution by using the neutralized red mud was studied in batch equilibration technique. The effects of pH, adsorbent dosage, initial boron concentration and contact time on the adsorption were investigated. The experiments demonstrated that boron removal was of a little fluctuation in pH range of 2-7 and it takes 20 min to attain equilibrium. The adsorption data was analyzed using the Langmuir and the Freundlich isotherm models and it was found that the Freundlich isotherm model represented the measured sorption data well.

International Nuclear Information System (INIS)

In boron mining and processing operations, large amounts of clay containing tailings have to be discarded. Being rich in boron, the tailings do not only cause economical loss but also pose serious environmental problems. Large areas have to be allocated for waste disposal. In order to alleviate this problem, the possibility of using clayey tailings from a borax concentrator in red brick manufacturing was investigated. Up to 30% by weight tailings addition was found to improve the brick quality.

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

International Nuclear Information System (INIS)

Full text: Semiconductor detectors coated with boron or lithium compounds have been studied for neutron detection for decades but, until recently, have been limited to thermal neutron detection efficiencies of less than 5%. We reported previously on development and simulation studies of perforated detectors whose perforations are filled with neutron-reactive material in order to produce higher detection efficiencies. Incorporation of bare and cadmium-backed detectors into battery-powered devices with low-power electronics enables us to produce compact personal neutron dosimeters that provide LED readout of counts, which can be related approximately to neutron dose. We report here on experimental studies with such compact devices; devices capable of direct readout in dose units are anticipated. The thermal and epithermal neutron flux densities from the tangential beam tube of the TRIGA Mark II reactor at Kansas State University were measured. Then, thermoluminescent ...

Energy Technology Data Exchange (ETDEWEB)

Using the method of high resolution electron microscopy (HEM) the shape and structure of powder particles of elementary amorphous boron, prepared by plasmochemical reduction of boron trichloride by hydrogen before and after their heat treatment in vacuum of approximately 1 x 10 SPa at the temperature of approximately 800 deg C for 30 min, have been studied. It is established, that ultradispersed particles of amorphous boron present flat formations (discs) of stable configurations, composed of several icosahedrons (structural elements); their growth during heat treatment takes place first in habitus plane without far order formation, and then, after attaining the diameter of approximately 500 A, the process of three-dimensional crystallization starts, which leads to the formation of crystal lattice of boron US -rhombohedric modification.

Energy Technology Data Exchange (ETDEWEB)

The production of three vector bosons in {gamma} {gamma} collisions studying the reactions {gamma} + {gamma} {yields} W{sup +} + W{sup -} + Z{sup 0} and {gamma} + {gamma} {yields} W{sup +} + W{sup -} + {gamma}. 12 refs., 4 figs., 2 tabs.

International Nuclear Information System (INIS)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P"+/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B"+ and BF_2"+ ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF_3 as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings ...

International Nuclear Information System (INIS)

In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a quasi-conservative ...

International Nuclear Information System (INIS)

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 ampersand hthinsp;degree C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3x10"1"4 and 1x10"1"5 cm"-"2. It is proposed that the excess interstitials responsible for BED are produced during the ...

Energy Technology Data Exchange (ETDEWEB)

This paper describes the main aspects and results of the planning studies undertaken to evaluate the technical benefits of using Thyristor Controlled Series Compensation (TCSC), in a large 500 kV transmission system (Brazilian North-Northeast system). TCSC controllers design and simplified models for digital non-linear time domain simulations are discussed. The proposed controllers are tuned and used to support the comparative analysis between controlled and fixed series compensation. The relevant conclusions concerning this comparison are highlighted. (author) 2 refs., 14 figs., 3 tabs.

Energy Technology Data Exchange (ETDEWEB)

A probabilistic method for assessing the profitability of reactive power compensation devices such as capacitors, static VAR compensators and generators, which improve network security, was described. Since network development is limited by environmental constraints, power networks are operated close to their limits. Because of this fact transmission network planning increasingly relies on techno-economic models to improve network security and profitability. The proposed method consists of analyzing large numbers of constrained power system states, extracted from power system simulation exercises. The paper describes details of the method and provides an example of a numerical application on a part of the French power transmission system. 10 refs., 8 figs.

Science.gov (United States)

This paper summarizes the main features of four current REDD proposals: Compensated Reduction, Papua New Guinea et al; Joint Research Center; and Brazil. ... ...

DEFF Research Database (Denmark)

This paper presents a new method to compensate the nonlinearities for matrix converter drives. The nonlinearities of matrix converter drives such as commutation delay, turn-on and turn-off time of the switching devices, and on-state switching device voltage drop is corrected by a new matrix converter model using the direction of current. The proposed method does not need any additional hardware or complicated software and it is easy to realize by applying the algorithm to the conventional vector control. The proposed compensation method is applied for high-performance induction motor drives using a 3-kW matrix converter system without a speed sensor. Experimental results show the proposed method provides good compensating characteristics.

Energy Technology Data Exchange (ETDEWEB)

During the last years one focus of German PWR safety analysis was boron dilution events with the potential of reactivity transients. Coolant with a low boron concentration could be collected in localized areas of the reactor coolant system e.g. by separation of borated reactor coolant into highly concentrated and diluted fractions (inherent dilution) which can occur during reflux- condenser heat transfer after a small break loss of coolant accident with a limited availability of the emergency core cooling systems. The TUeV NORD SysTec was charged by German supervisory authorities with the assessment of the safety analyses of boron dilution events presented by the utilities. These analyses are based on the simulation of boron dilution and transport processes in conjunction with a number of dedicated experiments. The analyses shall demonstrate that boron dilution events cannot lead to ...

Energy Technology Data Exchange (ETDEWEB)

During the last years, boron dilution events with the potential of reactivity transients were an important issue of German PWR safety analyses. A coolant with a low-boron concentration could be collected in localized areas of the reactor coolant system, e.g., by separation of a borated reactor coolant into highly concentrated and diluted fractions (inherent dilution) which can occur during reflux-condenser heat transfer after a small break loss of coolant accident with a limited availability of the emergency core cooling systems. During the course of follower core assessments, TUV NORD SysTec appraises safety analyses of boron dilution events presented by the utilities. These analyses are based on the simulation of boron dilution and transport processes in conjunction with a number of dedicated experiments. The analyses demonstrate that boron dilution events cannot lead to ...

International Nuclear Information System (INIS)

We discuss the search of excited leptons and quarks with spin 1/2 at #gamma##gamma# and at #gamma#e colliders. We show that #gamma##gamma# colliders have important advantages for the observation of excited leptons and quarks in comparison with ee, ep, and pp colliders discussed in previous papers. These collisions give a simple test for the chirality of the l"*l#gamma# transition. The anomalous magnetic moment of excited leptons can be observed when its value is not too small. (orig.).

International Nuclear Information System (INIS)

The Fast Flux Test Facility (FFTF) is a liquid-metal-cooled, fast neutron test reactor located on the Hanford Site. A dual computer system has been developed to monitor the reactor cover gas to detect and characterize any fuel or test pin fission gas releases. The system acquires gamma spectra data, identifies isotopes, calculates specific isotope and overall cover gas activity, presents control room alarms and displays, and records and prints data and analysis reports. The Fission Gas Monitor System (FGMS) integrates commercially available hardware and software, providing a reliable and easily maintained system. The design provides extensive automation of previous manual operations, reducing the need for operator training and minimizing the potential for operator error. The dual nature of the system allows either system A or B to be taken out of service for periodic tests or maintenance without interrupting the overall system performance. A control room color ...

International Nuclear Information System (INIS)

Boron carbide is a high-technological ceramic material (it is used for lightweight armor, neutron absorbers, wear pieces, etc.). Hot pressing (2200"0C, 40 MPa, Ar atmosphere) and recently high isostatic pressing, are the best know ways for industrial preparation of boron carbide items. Pressureless sintering using metallic, inorganic, B+C, additives is not successful, since, despite having a high density, impurities remain present. Pressureless sintering of boron carbide (or silicon carbide composite) using free carbon addition, produced by in-situ pyrolysis of a Novolaque-type phenol-formaldehyde resin (#approx =# 9 wt%), is now possible in industry. A promising new method is the use of organic precursors, e.g. polycarbosilane with a small amount of phenolic resin, giving CSi and C by in-situ pyrolysis; the resulting boron carbide ceramics have high density (> 92%) and contain no free carbon and a ...

Energy Technology Data Exchange (ETDEWEB)

Recent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank--Turnbull reactions. This study of boron TED reduction in Si{sub 1-x-y}Ge{sub x}C{sub y} during 750{sup o}C inert anneals has revealed that the use of an additional reaction that further reduces the Si self-interstitial concentration is necessary to describe accurately the time evolved diffusion behavior of boron. In this article, we present a comprehensive model which includes {l_brace}311{r_brace} defects, boron-interstitial clusters, a carbon kick-out reaction, a carbon Frank--Turnbull reaction, and a carbon interstitial-carbon substitutional (C{sub i}C{sub s}) pairing reaction that ...

International Nuclear Information System (INIS)

The design boron concentration of the Boron Injection Tank (BIT) in Daya Bay Nuclear Power Station is 21000 #mu#g/g. The BIT should operate under high temperature to avoid boron crystallization, causing higher evaporation, frequent water makeup, higher deposition and pipe blockage to decrease the operability of the safety injection system. The author proposes to decrease the boron concentration in BIT from 21000 #mu#g/g to 7000 #mu#g/g to solve the existing problem. The safety analyses (core DNBR and containment response) are conducted and other impacts are evaluated for the BIT reduction. The analysis results show that the core DNBR meets the safety criterion and the containment pressure is within the design value for the steam line rupture accident after the BIT reduction. The feasibility study report of Daya bay BIT reduction has been approved by NNSA. The site implementation of BIT reduction has ...

International Nuclear Information System (INIS)

The results of the study of dimensionally dependent fluorescence of boron difluoride ?-diketonates of general formula (R1COCHCOR2)BF2 are presented. The fact that for most of the compounds studied a noticeable hypsochrome shift of the luminescence band maximum is characteristic during transition from bulk crystals to microcrystals was detected. However, for boron difluoride dibenzoylmethanate having a unique supramolecular structure, a bathochromic shift of luminescence due to the crustal size reduction is observed. The dimensionally dependent luminescence properties of the complexes have been analyzed within the exciton mechanism

International Nuclear Information System (INIS)

For the purpose of optimizing the process of co-implantation of MeV Si ions to reduce boron transient enhanced diffusion and boron-enhanced diffusion in Si, multiple MeV implantations and annealing at different temperatures have been performed. A slight improvement on the suppression of B diffusion is observed by adding a low temperature annealing step after the MeV implantation. No differences in B diffusion are observed when the Si doses are increased from 1 x 10"1"5 to 1 x 10"1"6 cm"-"2. This dose independent behavior is speculated to be a quasi-steady state of vacancy cluster evaporation.

UK PubMed Central (United Kingdom)

A model-based method has been previously developed to estimate and compensate for the crosstalk and downscatter contamination in simultaneous ¹²³I∕^99mTc dual-isotope SPECT...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Dynamic stability improvement of a longitudinal power system using a power system stabilizer (PSS) and a static VAR compensator (SVC) is reported in this paper. An analytical approach is developed for the determination of PSS parameters. Results from time domain simulations indicate that the PSS and the SVC are very effective in damping system oscillations.

Energy Technology Data Exchange (ETDEWEB)

Three possibilities to observe the Higgs-top interaction at future {gamma}{gamma}-colliders are discussed: (a) associated Higss production via the {gamma}{gamma}{yields}tanti tH reaction, (b) Higgs obliged radiative correction to the {gamma}{gamma}{yields}tanti t channel, (c) Higgs resonance production via {gamma}{gamma}{yields}H{yields}ZZ. The results obtained show windows of the Higss mass where the Yukawa interaction of the Higss with the top quark can be studied at {gamma}{gamma}-colliders. (orig.).

International Nuclear Information System (INIS)

... coincidence spectrometry decay excited states gamma spectra half-life

International Nuclear Information System (INIS)

We have investigated the effect of excimer laser annealing (ELA) on transient enhanced diffusion (TED) and activation of boron implanted in Si during subsequent rapid thermal annealing (RTA). It is observed that ELA with partial melting of the implanted region causes reduction of TED in the region that remains solid during ELA, where the diffusion length of boron is reduced by a factor of #approx#4 as compared to the as-implanted sample. This is attributed to several mechanisms such as liquid-state annealing of a fraction of the implantation induced defects, introduction of excess vacancies during ELA, and solid-state annealing of the defects beyond the maximum melting depth by the heat wave propagating into the Si wafer. The ELA pretreatment provides a substantially improved electrical activation of boron during subsequent RTA.

International Nuclear Information System (INIS)

In this paper a novel method is presented, based on the use of plasma processing, to suppress the transient enhanced diffusion of boron implanted in silicon. We found for silicon samples processed with plasma and subsequently boron implanted that the anomalous diffusion of the dopant atoms at the beginning of the annealing process is almost completely suppressed. This phenomenon is interpreted in terms of capture of the ion beam generated interstitials by the dislocations induced by the plasma processing. At room temperature the dislocations are observed to grow in size after the boron implant, attesting their efficiency as trapping centres for interstitials. Moreover, varying the plasma process conditions we can establish a general relation between the presence of the trapping centres induced by the plasma processing and the suppression of the transient diffusion.

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of ...

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

Science.gov (United States)

... 1. Reeber, RR, Kusy, RP, Yu, N. and Chu, WK " Formation of a Solid Lubricant in Boron Carbide by Nitrogen Ion Implantation and Laser Annealing ...

Energy Technology Data Exchange (ETDEWEB)

Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x{sub j} is limited to {ge} 100 nm at 1,050 C. The authors term this enhancement, which arises in the presence of B atomic concentrations at the surface of {approx} 6%, Boron-Enhanced-Diffusion (BED).

International Nuclear Information System (INIS)

Charge carrier profiles are measured for boron implanted into silicon (E = 30 keV, dose range 5 x 10"1"5 to 2 x 10"1"6 B/cm"2) after rapid isothermal annealing using halogen lamps. Maximum temperatures between 1000 and 1300 "0C and holding times at T/sub max/ of 5 and 20 s are used for the annealing treatment. In a few additional experiments flash lamp annealing at 1350 "0C (pulse duration 20 ms) is investigated. By comparison of the experimental profiles with computer simulations using the SUPREM II program transient enhanced diffusion of boron could be detected in all investigated cases. Maximum charge carrier concentrations above the equilibrium solubility of boron are observed and are discussed. (author).

International Nuclear Information System (INIS)

The Gamma Physics (GaP) program of physical phenomena investigation is proposed on #gamma#p, #gamma#e and #gamma##gamma# colliders at TeV energies. The program contains specialized software (CompHEP system) created for automation of particle interaction processes calculations in the framework of various gauge models. Preliminary physical results are presented (heavy quark production, W, Z production, supersymmetry etc.), and further software development is suggested. (R.P.) 22 refs., 8 figs., 4 tabs.

International Nuclear Information System (INIS)

Boron/aluminum skins and channels were used in the fabrication of a prototype honeycomb sandwich avionics shelf. The avionic shelves are stiffness-critical and must be vibration tolerant. In conjunction with the shelf mounting system, they must isolate the avionics equipment from the severe vibration of the primary and secondary structure nearby. Design rationale, fabrication procedures, vibration test criteria and test results are presented. (9 fig) (U.S.).

Energy Technology Data Exchange (ETDEWEB)

Short communication

Energy Technology Data Exchange (ETDEWEB)

Future linear colliders offer unique opportunities to study {gamma}{gamma}, {gamma}e interactions. Using the laser backscattering method one can obtain {gamma}{gamma}, {gamma}e colliding beams with energy and luminosity comparable to the electron-position luminosity or even higher. In this review physical principles of photon colliders are described and various problems, concerning the accelerator, laser, interaction region and luminosity are discussed. Some examples of physical processes are given. ((orig.)).

International Nuclear Information System (INIS)

In this paper, we show that boron transient enhanced diffusion can be reduced to different extents by varying the distribution of nitrogen atoms in the junction. This is attributed to the relative location of nitrogen atoms with respect to boron profile and end-of-range defect band, affecting the interactions between dopants and defects upon annealing. In addition, variations in boron dopant activation and deactivation are also observed. Similar to fluorine co-implantation, it is proposed that nitrogen atoms react with vacancy point defects to form nitrogen-vacancy clusters that will trap the interstitials emitted from end-of-range defects. However, we report that the interstitial sink efficiency of nitrogen atoms is not as good as the co-implanted carbon atoms, which is noticed from the dopant deactivation curves. In terms of extended defect evolution, the results clearly indicate that end-of-range defects can be ...

Energy Technology Data Exchange (ETDEWEB)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7/sup 0/ tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5/sup 0/ from the surface normal and rotated at 7.0 +/- 0.5/sup 0/ from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two ...

International Nuclear Information System (INIS)

Carbide ceramics such as boron carbide due to their unique properties such as low density, high refractoriness, and high strength to weight ratio have many applications in different industries. This study focuses on direct bonding of boron carbide for high temperature applications using nickel interlayer. The process variables such as bonding time, temperature, and pressure have been investigated. The microstructure of the joint area was studied using electron scanning microscope technique. At all the bonding temperatures ranging from 1150 to 1300degC a reaction layer formed across the ceramic/metal interface. The thickness of the reaction layer increased by increasing temperature. The strength of the bonded samples was measured using shear testing method. The highest strength value obtained was about 100 MPa and belonged to the samples bonded at 1250 for 75 min bonding time. The strength of the joints decreased by increasing the bonding ...

Energy Technology Data Exchange (ETDEWEB)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak of precipitated dopants produced during ...

Energy Technology Data Exchange (ETDEWEB)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation ...

Energy Technology Data Exchange (ETDEWEB)

The angular ..gamma gamma..-correlations for nuclei of Sr even-even isotopes with A=82, 84, 86, 88 were measured. Multipole structurs of ..gamma..-transtion series and th coefficients multipole mixing were determined.

Science.gov (United States)

The gamma spectrum and gamma - gamma coincidences of /sup 177/W were measured with a Ge(Li) detector. A level scheme was proposed for /sup 177/Ta. (tr-auth)

Energy Technology Data Exchange (ETDEWEB)

We have used polarised neutrons to measure the integrated magnetic cross-section of a dilute alloy of Ce in Y a Kondo system, T{sub K}{approx}40 K. Previous polarised neutron measurements of the field-induced magnetic form factor found no anomalies that could be attributed to the formation of a spin compensation cloud around the Ce ion. The present measurements, focused on the diffuse low-Q range, represent information over a very wide length scale in real space. Again, they show no changes in the Q-dependence of the form-factor at low temperatures that could be attributed to the formation of a spin compensation cloud. An alternative interpretation of the phenomenon based on the dynamical magnetic susceptibility of Y-Ce is proposed.

DEFF Research Database (Denmark)

This paper presents a new method to improve sensorless performance of matrix converter drives using a parameter estimation scheme. To improve low-speed sensorless performance, the non-Iinearities of a matrix converter drive such as commutation delays, turn-on and turn-off times of switching devices, and on-state switching device voltage drop is modelled using PQR transformation and compensated using a reference current control scheme. To eliminate the input current distortion due to the input voltage unbalance, a simple method using PQR transformation is also presented. The proposed compensation method is applied for high performance induction motor drives using a 3 kW matrix converter system without a speed sensor. Experimental results are shown to illustrate the feasibility of the proposed strategy.

Energy Technology Data Exchange (ETDEWEB)

We discuss the search of excited leptons and quarks with spin 1/2 at {gamma}{gamma} and at {gamma}e colliders. We show that {gamma}{gamma} colliders have important advantages for the observation of excited leptons and quarks in comparison with ee, ep, and pp colliders discussed in previous papers. These collisions give a simple test for the chirality of the l{sup *}l{gamma} transition. The anomalous magnetic moment of excited leptons can be observed when its value is not too small. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The physicochemical nature of a silicoaluminophosphate with the faujasite structure has been studied. The molecular sieve framework contains a homogeneous distribution of silicon, aluminum, and phosphorus and is negatively charged. Combustion in air of the charge-compensating organic cations produces hydroxyl groups which exhibit Broensted acidity.

UK PubMed Central (United Kingdom)

The membrane properties of isolated cultured microglia have been extensively studied but it is important to understand their properties in situ, where they protect the brain against...Full Text Available

UK PubMed Central (United Kingdom)

Effective connectivity in brain networks can be studied using Granger causality analysis which is based on temporal precedence, while functional connectivity is usually derived using zero-lag...Full Text Available

UK PubMed Central (United Kingdom)

The offline adaptive radiotherapy (ART) has been used to effectively correct and compensate the prostate motion and reduce the required margin. The efficacy depends on the characteristics of...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The author discusses in detail the following topics: Compensation for domestic nuclear damage and for transfrontier nuclear damage - rule of formal equality of parties which belongs to the basic rule of civil law considering the position of domestic and foreign victims of a grave accident-juridical consequences of the preponderant role played by the state in the promotion, development and supervision of the nuclear industry-rationale for applying the concept of global limitation of liability in the law on nuclear liability and compensation - financial consequences of uncompensated nuclear damage, borne by the victims directly affected or spread over the whole community of the affected state? (HP)

Science.gov (United States)

The MgF{sub 2} monocrystals were irradiated at room temperature with 390 keV B{sup +} ions up to the fluence of 10{sup 16} cm{sup -2}. The irradiated samples were (isochronally and isothermally) annealed in high vacuum at the temperatures 200 deg. C, 300 deg. C, 400 deg. C, 500 deg. C, 600 deg. C and 700 deg. C for the times ranging from 2-100 hours. After each annealing step, the boron depth distribution was determined using the neutron depth profiling technique. As implanted, the depth distributions of boron exhibited standard Gaussian-like forms, but the evaluated profile parameters, R{sub P} = 960 nm and {delta}R{sub P} = 140 nm, were higher than those calculated using the SRIM code (R{sub P} = 870 nm and {delta}R{sub P} = 115 nm). Annealing at temperatures up to 400 deg. C did not change the depth profiles. Annealing at 600 deg. C, however, led to a one-way gradual transfer of the boron atoms from the site of ...

International Nuclear Information System (INIS)

A #gamma##gamma# collider would extend and complement the physics capability of a linear collider; e.g. it would be suitable for direct measurement of the partial decay width of a Higgs boson into two gamma quanta. This paper discusses choice of laser parameters, luminosity optimization, electron and laser parameters for a gamma- gamma collider as a second interaction region for the Next Linear Collider, laser path, and the lasers. It is concluded that a gamma- gamma collider is technically feasible; however it will require a significant investment in preparatory R ampersand D.

International Nuclear Information System (INIS)

We investigate the chargino production process #gamma##gamma# #-># (W-tilde)"+(W-tilde)"- at high energy #gamma##gamma# colliders in the framework of the minimal supersymmetric standard model (MSSM). Here the high energy #gamma# beams are obtained by the backward Compton scattering of the laser flush by the electron in the basic linear TeV ee colliders. We consider the polarization of the laser photons as well as the electron beams. Appropriate beam polarization could be effective to enhance the cross section to for us extract the signal from the dominant background #gamma##gamma# #-># W"+W"-. (author).

Energy Technology Data Exchange (ETDEWEB)

The oxidation of boron carbide in steam or air was recently extensively studied especially in Forschungszentrum Karlsruhe, Institut fuer Materialforschung. An important data set is available for the interaction modelling. An oxygen diffusion model through the superficial liquid boron oxide formed on the boron carbide external surface associated to a superficial reaction between the liquid boron oxide and steam is proposed to simulate the experimental kinetics from BOX rig and thermogravimetric tests on the interaction between steam and boron carbide at a temperature range 800 C to 1400 C. The oxygen diffusion model will be also useful to simulate interaction between boron carbide and Ar+O2 (air simulation) atmosphere when the steam pressure becomes zero. From the analysis of BOX rig experimental kinetics of non-condensable (H2, CO2, CO and CH4) gases we propose ...

Energy Technology Data Exchange (ETDEWEB)

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response with depth is attributable to local trapping ...

Science.gov (United States)

as for direct energy conversion in specialized direct electrical energy conversion plants. Figure 1. An energetic (~163KeV) proton and a 11boron nucleus fuse ...

Energy Technology Data Exchange (ETDEWEB)

Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms of boron-interstitial ...

Energy Technology Data Exchange (ETDEWEB)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF{sub 2}{sup +}) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF{sub 2}{sup +} implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles ...

Energy Technology Data Exchange (ETDEWEB)

A prototype detector based on the inclined absorber layer principle is introduced. For the Liquids Reflectometer at the Spallation Neutron Source, it is shown to be a significant improvement over its current detector, which imposes an instantaneous count rate limitation of 50 kcps.

International Nuclear Information System (INIS)

Short communication.

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

Short communication.

International Nuclear Information System (INIS)

Full text of publication follows: The TUV NORD e.V. is an independent Technical Support Organisation (TSO) performing safety assessments in almost every field of technology. In nuclear safety the TUV can look back on more than 40 years of experience. In the last years in Germany PWR safety analyses were focussed on boron dilution events with the potential of reactivity transients. The possibility of coolant with a low boron concentration collected in localized areas of the reactor coolant system (RCS) can be caused by injection of coolant with less boron content from interfacing systems (external dilution) as well as separation of borated reactor coolant into highly concentrated and diluted fractions (inherent dilution). Inherent dilution can e.g. occur after reflux-condenser heat transfer after a small break loss of coolant accident (SBLOCA) with a limited operability of the emergency core cooling (ECC) systems. The TUV ...

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

International Nuclear Information System (INIS)

The adsorption properties of four samples of the #alpha#-modification of boron nitride (#alpha#-BN) were investigated by the gas-chromatographic method. According to the electron microscopy data, the #alpha#-BN particles possess the shape of thin plates. An #alpha#-BN sample prepared from magnesium polyboride, is the most uniform adsorbent. For a series of n-alkanes, benzene, and alkyl benzenes, by testing the #alpha#-BN samples one has obtained the retained volumes (Henry constants) and the values of the differential adsorption heat, which are close to those of the surface zero filling. These thermodynamic characteristics of adsorption have shown that the #alpha#-BN, line the graphitized thermal carbon black, is not a specific adsorbent.

International Nuclear Information System (INIS)

German 2003 p. 24 Germany Klemz, G. Moenig, K. Sekaric, J. Stahl,

Energy Technology Data Exchange (ETDEWEB)

The cross sections of neutral tensor mesons T=a{sub 2}, f, f', ... production in the exclusive {gamma}{gamma}{yields}TT' or semiexclusive {gamma}{gamma}{yields}TX processes (three gluon exchange) in the semihard region s>>vertical stroketvertical stroke>1 GeV{sup 2} are calculated. The relation of investigated processes to the problem of perturbative Odderon is discussed. The possibility of measurements at LEP and at a future {gamma}{gamma}-colliders is discussed too. (orig.).

International Nuclear Information System (INIS)

... correlation beta-minus decay coincidence spectrometry experimental data

Energy Technology Data Exchange (ETDEWEB)

We summarize the predictions of different models for total {gamma}{gamma} cross-sections. The experimentally observed rise of {sigma}{sub {gamma}}{sub {gamma}} with s radical {sub {gamma}}{sub {gamma}}, faster than that for {sigma}{sub p-barp}, {sigma}{sub {gamma}}{sub p} is in agreement with the predictions of the Eikonalized Minijet Models as opposed to those of the Regge-Pomeron models. We then show that a measurement of {sigma}{sub {gamma}}{sub {gamma}} with an accuracy of < or approx. 8-9% (6-7%) is necessary to distinguish among different Regge-Pomeron type models (the different parameterisations of the EMM models) and a precision of < or approx. 20% is required to distinguish the predictions of the EMMs and of those models which treat 'photon like a proton', for the energy range ...

Energy Technology Data Exchange (ETDEWEB)

We analyze spin correlations between top quark and anti-top quark produced at polarized e{sup +} e{sup -} and {gamma}{gamma} colliders. We consider a generic spin basis to find a strong spin correlation. Optimal spin decompositions for top quark pair are presented for e{sup +}e{sup -} and {gamma}{gamma} colliders. We show the cross- section in these bases and discuss the characteristics of results.

International Nuclear Information System (INIS)

In the framework of the equivalence theorem the one-loop helicity amplitudes and cross section for the double Higgs production process #gamma##gamma##->#HH are calculated. It is shown that the cross section is measurable at TeV #gamma##gamma# colliders and is marginally sensitive to the triple-Higgs variation. (orig.).

International Nuclear Information System (INIS)

The complementarity of e"+e"- and #gamma##gamma# colliders to discover and explore new physics beyond the Standard Model (SM) is discussed. After briefly surveying a number of various new physics scenarios, we concentrate in detail on signatures for Large Extra Dimensions via the process #gamma##gamma##->#WW.

Energy Technology Data Exchange (ETDEWEB)

Peroxisome proliferator activated receptor-{gamma} (PPAR{gamma}) regulates metabolic homeostasis and adipocyte differentiation, and it is activated by oxidized and nitrated fatty acids. Here we report the crystal structure of the PPAR{gamma} ligand binding domain bound to nitrated linoleic acid, a potent endogenous ligand of PPAR{gamma}. Structural and functional studies of receptor-ligand interactions reveal the molecular basis of PPAR{gamma} discrimination of various naturally occurring fatty acid derivatives.

Energy Technology Data Exchange (ETDEWEB)

We investigate the sparticle production processes e{gamma} {yields} e tilde(Z tilde){sub 1} and {gamma}{gamma} {yields} (f tilde)(f tilde and bar) at high energy e{gamma} and {gamma}{gamma} colliders in the framework of the minimal supersymmetric standard model (MSSM). It will be shown that the e{gamma} colliders would be more suitable in searching for the heavy selectrons than ee colliders because of the low mass threshold of the process e{gamma} {yields} (e tilde)(Z tilde){sub 1}. We show that the standard background processes e{gamma} {yields} {nu}W and eZ can be suppressed in terms of initial beam polarization as well as the kinematical cuts on the energy and angle of the final electron. Moreover, it will be argued that the experimental measurements of the cross sections for the processes e{gamma} {yields} (e ...

Energy Technology Data Exchange (ETDEWEB)

This paper presented a technique to compensate for distorted secondary currents. Since current distortion can cause operating time delays in protective relays, attempts are made to minimize current transformer (CT) saturation by choosing a CT with a voltage rating that is at least twice that required for the maximum steady-state symmetrical fault current. However, the possibility of saturation still exists because of the DC component of an asymmetrical fault current and the remanent flux in a CT core. An advanced algorithm for the compensation of the distorted signal due to CT saturation was proposed. The secondary current can be expressed as the linear combination of sinusoidal and exponential signals, if no saturation occurs. In this study, the algorithm first utilized the third difference function for detecting the start and end of saturation in real-time. The AR model-based FIR filter and the least mean square curve fitting method were then ...

International Nuclear Information System (INIS)

We analyze the potential of the e"+e"- linear colliders, operating in the e#gamma# and #gamma##gamma# modes, to probe anomalous quartic vector-boson interactions through the multiple production of W's and Z's. We examine all SU(2)_L(circle times)U(1)_Y chiral operators of order p"4 that lead to new four-gauge-boson interactions but do not alter trilinear vertices. We show that the e#gamma# and #gamma##gamma# modes are able not only to establish the existence of a strongly interacting symmetry breaking sector but also to probe for anomalous quartic couplings of the order of 10"-"2 at 90% C.L. Moreover, the information gathered in the e#gamma# mode can be used to reduce the ambiguities of the e"+e"- mode.

International Nuclear Information System (INIS)

The SPring-8 linac has been improved to realize stable top-up injection into the SPring-8 and the NewSUBARU storage rings. The beam energy instability of 0.02% rms in the long term was achieved by means of reducing RF variations, providing beam energy compensation, reinforcement of monitor systems and introduction of beam feedback controls: Variations in the RF power and phase have been reduced by improving the voltage regulation system for the klystron modulator, and by stabilizing the temperature drift of the atmosphere and cooling water in order to reduce the phase variation. A new synchronous oscillator synchronizes a beam trigger pulse and a 2856 MHz reference signal, reducing variation in the beam charge. A beam energy compression system (ECS) was installed to compensate for accidental energy variation and reduce the energy spread. Beam feedback controls compensate for residual long-term variations of beam trajectory ...

CERN Document Server

An electroweak singlet scalar can couple to pairs of vector bosons through loop-induced dimension five operators. Compared to a Standard Model Higgs boson, the singlet decay widths in the diphotons and Z gamma channels are generically enhanced, while decays into massive final states like WW and ZZ are kinematically disfavored. The overall event rates into gamma gamma and Z gamma can exceed the Standard Model expectations by orders of magnitude. Such a singlet may appear as a resonant signal in the gamma gamma and Z gamma channels, even with a mass above the WW kinematic threshold.

International Nuclear Information System (INIS)

Corrosion testings of model alloys, corresponding by chemical composition to simple and complex-alloyed #gamma#- and #gamma#'-phases of nickel heat-resistant alloys are conducted in sodium sulfate and chloride melts. It is ascertained that heat resistant nickel alloys containing over 50 % of hardening #gamma#'-phase, are subject to disastrous sulfide corrosion (SC). Resistance against SC alloys containing below 50 % of #gamma#'-phase is determined by the resistance of #gamma#-solid solution. 10 refs., 3 figs., 2 tabs.

International Nuclear Information System (INIS)

Purpose: To eliminate the water level deviation due to the recycling flowrate, as well as enable a stable control to a reference value even upon changes in the recycling flowrate caused by the variation in the opening degree of a minimum flow valve. Constitution: Reactor recycling system comprises a feedwater pump, a flowrate control valve, a reactor water level detector, and a minimum flow line and a minimum flow valve for preventing the overheating of the feedwater pump at a low flowrate. A flowrate compensator is further disposed, in which a recycling flowrate signal is subtracted from a pump flow rate signal and the result is fedback as a compensated pump flowrate signal. This enables the control system to operate at a rapid response for suppressing the effect of the recycling flowrate as external disturbance, whereby the water level in the reactor can be controlled stably to the reference level and the possibility deviating from an ...

Energy Technology Data Exchange (ETDEWEB)

Following the United Kingdom's nuclear tests at Maralinga in Australia in the 1960's, the Australian government signed away its rights to claim compensation for decontamination costs in a 1968 agreement. Controversy now rages as the Australian government is claiming pound33 million for this purpose from the United Kingdom to compensate the Maralinga Tjarutja for the loss of access to their traditional lands. They claim that the UK clean-up operation was inadequate and that much plutonium was spread over the land, rather than contained in pits. Measurements of contamination at the site were wrong by a factor of ten according to a 1984 visit when Australian scientists were horrified to realize that an Aboriginal child living near Taranaki could inhale more than 460 millisieverts a year. As ministers from both countries meet in June 1993 the debate is likely to be heated and hotly defended. (UK).

International Nuclear Information System (INIS)

We calculate the cross sections for the single production of doubly charged dileptons, both scalar and vector, at e"+e"-, e#gamma#, and #gamma##gamma# colliders at #sq root#s =500 GeV and 1 TeV. The e#gamma# mode is by far the most promising---dileptons whose coupling is as weak as #approx#10"-"4#alpha#_e_m can be observed, for masses virtually up to the kinematic limit. Dileptons of mass up to #sq root#s can also be seen in e"+e"- and #gamma##gamma# colliders, for couplings of order #alpha#_e_m. In all three colliders, most of the cross section comes from events in which the only particles detected are e"-e"- (or #mu#"-#mu#"- or #tau#"-#tau#"-), the decay products of the dilepton, yielding an unmistakable experimental signature.

Energy Technology Data Exchange (ETDEWEB)

We perform an optimal-observable analysis of the final charged-lepton/b-quark momentum distributions in {gamma}{gamma}{yields}t t-bar {yields}lX/bX for various beam polarizations in order to study possible anomalous t t-bar {gamma}, tbW and {gamma}{gamma}H couplings, which could be generated by SU(2) x U(1) gauge-invariant dimension-6 effective operators. We find optimal beam polarizations that will minimize the uncertainty in determination of those non-standard couplings. We also compare e e-bar and {gamma}{gamma} colliders from the viewpoint of the anomalous-top-quark-coupling determination.

Energy Technology Data Exchange (ETDEWEB)

CMSX-4 superalloy laser beam welds were investigated by transmission electron microscopy and atom probe field-ion microscopy (APFIM). The weld microstructure consisted of fine (10- to 50-nm) irregularly shaped {gamma}` precipitates (0.65 to 0.75 volume fraction) within the {gamma} matrix. APFIM compositions of the {gamma} and {gamma}` phases were found to be different from those in the base metal. Concentration profiles across the {gamma} and {gamma}` phases showed extensive variations of Cr, Co and Al concentrations as a function of distance within the {gamma} phase. Calculated lattice misfits near the {gamma}/{gamma}` interface in the welds are positive values compared to the negative values for base metal. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion (TED) from implantation of 5thinspkeVthinspB{sub 10}H{sub 14} and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10{sup 14} and 10{sup 15}thinspcm{sup {minus}2}. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10{sup 15}thinspcm{sup {minus}2}thinspB dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial ...

Energy Technology Data Exchange (ETDEWEB)

Significant ion irradiation during film growth is required for the formation of cubic boron nitride (cBN) films. Meanwhile, a huge level of intrinsic stress possibly induced by the ion bombardment has been frequently reported to result in cracking and/or lack of adhesion of deposited cBN films. The present work has been performed to investigate the interfacial and/or the buffer layer structures with better matching to the cBN film by relaxation of the film stress using ion-beam-assisted deposition (IBAD). Boron nitride films have been synthesized on Si(100) wafer and tungsten carbide (WC) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions in the energy range of 0.5-10 keV. Cubic BN films with enhanced tribological properties have been explored by inserting a BN layer with various B/N compositions as a controlled buffer at the interface. Significant ...

International Nuclear Information System (INIS)

Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare these two cases and to find out what are ...

Energy Technology Data Exchange (ETDEWEB)

The influence of substrate temperature on both the implantation and post-annealing characteristics of molecular-ion-implanted 5 x 10{sup 14} cm{sup -2} 77 keV BSi in silicon was investigated in terms of boron depth profiles and damage microstructures. The substrate temperatures under investigation consisted of room temperature (RT) and liquid nitrogen temperature (LT). Post-annealing treatments were performed using rapid thermal annealing (RTA) at 1050 deg, C for 25 s. Boron depth profiles and damage microstructures in both the as-implanted and as-annealed specimens were determined using secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), respectively. The as-implanted results revealed that, compared to the RT specimen, the LT specimen yields a shallower boron depth profile with a reduced tail into the bulk. An amorphous layer containing a smooth amorphous-to-crystalline (a/c) interface is ...

Energy Technology Data Exchange (ETDEWEB)

In this thesis a study is made of the of voltage characteristics and reactive power control in the transmission network of the Electric Power Systems (EPS) with static compensators of VARs (SCVs). The necessity of voltage and reactive power control and the application of SCVs as a solution means for three representative operation stages of the EPS, considering balanced operation conditions and fundamental frequency is analyzed: Operation in the presence of incremental voltage changes, quasi-stationary operation or steady state and behavior at the occurrence of big disturbances. The application of SCVs to systems of integral transmission is in general a closed loop control system, reason why the analysis of the interaction of the system EPS-SCV is considered as an essential part of the voltage and reactive power control study. Firstly, the response analysis of the control loop is made for incremental voltage changes, representing the power system by means of its ...

British Library Electronic Table of Contents (United Kingdom)

Abstract Turnip (Brassica rapa L.) plants were grown at adequate (25 mmol L-1) or low (<2.5 mmol L-1) boron (B) supply in nutrient solution for 1 month. The shoot and root dry weight was inhibited by up to 77% and 45%, respectively, in response to low B supply. The results of a retranslocation experiment showed that loaded B in the mature leaves was depleted rapidly during the experimental period and that this B was retranslocated to younger leaves as judged by B depletion from mature leaves simultaneously with the appearance of B in new leaves. Up to 89% of the B content of mature leaves was lost during 4 weeks of growth under B-deficient conditions. In addition, in B-deficient plants, a greater proportion of the total plant B was allocated to young leaves compared with B-sufficient plant...

International Nuclear Information System (INIS)

The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In particular, the I-substitutional carbon (C) interactions have been studied, using a molecular-beam-epitaxy grown Si_1_-_yC_y layer interposed between the shallow I-source and a deeper B-spike (marker for I-concentration). Substitutional C atoms are shown to trap I's, to be removed from their substitutional sites, and to form stable precipitates into the C-rich region. The I-trapping mechanism was quantitatively studied by a simulation code. The reactions causing trapping and deactivation are described. In addition, the boron markers approach was extended to the two dimensional (2D) diffusion. High resolution scanning capacitance microscopy was used for quantitative measurements of the 2D boron transient enhanced diffusion induced on a boron delta array by the I's ion beam ...

International Nuclear Information System (INIS)

Single crystal cubic boron nitride (cBN) was heteroepitaxially grown on a seed crystal of diamond under static high pressure and high temperature at 5.5GPa and 1,600--1,700 C, respectively, for 10--100 hour. A temperature gradient method was employed for the crystal growth by using lithium boron nitride as a solvent. Initial growth feature of cBN crystal was found on the diamond seed surface after the growing time of 10 minutes. The nucleation sites of the crystals seem to be near the etch pits on the diamond surface which were introduced by the surface dissolution by the solvent for cBN growth. Two types of growth features, island and step growth were typically shown on the surface. It can be seen that grown crystal appearing as a (111) nitrogen face was exhibited with the step growth feature, while the (11n) face exhibited the island growth feature. Considering the growth process under constant P-T growing condition, growth rate of cBN ...

Energy Technology Data Exchange (ETDEWEB)

A simulation model for boron diffusion which takes into account the aggregation of the excess interstitials in clusters, and subsequently, the dissolution of these defects, is proposed. The interstitial supersaturation and generation rate are determined according to the classical theory of nucleation and growth of particles, in analogy with the precipitation of a new phase in heavily doped silicon. The clusters are considered as precipitates formed by interstitial Si atoms. The B diffusion is modelled on the basis of the dopant-interstitial pair diffusion mechanism. The clusters dissolution during annealing maintains nearly constant, for a long period, the interstitial supersaturation and the related enhancement of the boron diffusion. This gives a good account of the diffusion results over a large range of experimental conditions. Furthermore, this approach describes most of the behavior of the transient enhanced diffusion (TED), like the ...

Energy Technology Data Exchange (ETDEWEB)

The main driver in ultra-shallow formation for the 65 nm technology node and beyond is to find solutions that both reduce boron transient enhanced diffusion and can be integrated in the CMOS process flow. To this end, many studies have recently focused on using co-doping techniques with fluorine and most recently with carbon. In most cases, one or both of these is co-implanted with a dopant specie in pre-amorphized silicon. In this work, we show a comparative study of fluorine or carbon co-implanted with low-energy boron to form source and drain extension junctions for PMOS devices. We will show that by a systematic optimization of germanium, boron, fluorine or carbon energies and doses, spike annealing technology can be extended to the 65 nm node. These results will be used to discuss how the different formed junctions offer potential solutions for either low-power or high-performance PMOS device fabrication.

UK PubMed Central (United Kingdom)

Interleukin 12 (IL-12) activates natural killer (NK) and T cells with the secondary synthesis and release of interferon-gamma (IFN-gamma) and other cytokines. IL-12-induced organ alterations are reported...Full Text Available

International Nuclear Information System (INIS)

The radioactive decay of "2"0"3Bi is studied. A level scheme is proposed for "2"0"3Pb on the basis of #gamma#-ray and electron spectra and #gamma#-#gamma# coincidence measurements. The experimental data are compared with theoretical results obtained in a three quasiparticle approximation. (Auth.).

UK PubMed Central (United Kingdom)

The natural biotic capacity of soils to degrade gamma-hexachlorocyclohexane (gamma-HCH, lindane) was estimated using an enrichment technique based on the ability of soil bacteria to develop on synthetic...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A decoupled characteristic between the damping of a specific swing mode and the stabilizer gain of the corresponding machine in multimachine power systems is identified. Using this decoupled characteristic a power system stabilizer (PSS) synthesis approach which is based on the phase compensation concept is verified on a 9-machine system and the dynamic performance of this system is significantly improved. This method is proved to be effective, simple and it can provide useful guidance for the PSS field tuning.

Energy Technology Data Exchange (ETDEWEB)

The U. S. Department of Energy (DOE) is required by Comprehensive Environmental Response, Compensation, and Liability Act of 1980 regulations to develop a conceptual understanding of potential contaminant releases from the Hanford Site based on an evaluation of existing data and known historical practices. Polychlorinated biphenyls (PCBs) are one environmental contaminant potentially released through leaks, spills, or disposal. This document presents a summary of selected relevant existing information, including environmental studies and Hanford Site analytical data.

Energy Technology Data Exchange (ETDEWEB)

The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

International Nuclear Information System (INIS)

It was shown that the incorporation of "1"4C-linoleic acid in cerebrosides of normal and psoriatic human skin is different. In psoriatic epidermis and corium the turnover of this fatty acid is significantly elevated. It is suggested that in psoriasis the epidermal cell is not able to build up a regular carbohydrate sequences of lipids because the false carbohydrate chain activates the degradation of glycolipids and in compensating for the increased degradation raises the synthesis rate of glycolipids. (orig./MG).

Energy Technology Data Exchange (ETDEWEB)

Within the Westeuropean network of the electric current supply a continuing compensation is necessary with respect to the permanent alterations of capacity and frequency. Pumped-storage plants are of considerable significance to meet these requests. The Schluchseewerk AG, Freiburg/Breisgau, has among others five pumped-storage plants in the southern part of the Black Forest. The conception and the operation of them are described. (orig.).

Energy Technology Data Exchange (ETDEWEB)

This paper describes the effects of motion of beam components (quads, rf cavities and dipoles) on the beam and considers the properties of a compensation system from the perspective of users. The system departs from standard practice in considering active perturbation of the electron beam to verify beam corrections. The effects of local closed orbit perturbations to direct undulator beams at different experimental setups are also considered.

CERN Document Server

The top-color assisted technicolor (TC2) mode predicts the existence of a pair of charged top-pions $\\pi^{\\pm}_t$. In this paper, we study the production of the charged top-pions pair $\\pi^{\\pm}_t$ at next generation $\\gamma\\gamma$ colliders. The results show that the production rates can reach the level of $10^2$ fb with reasonable parameter space. With a large number of events and the clean background, the charged top-pion should be observable at the $\\gamma\\gamma$ colliders. Therefore, our studies can help us to search for charged top-pion, and furthermore, to test the TC2 model.

International Nuclear Information System (INIS)

We present the efficient technique to extract the signal of the intermediate mass Higgs boson from the backgrounds at future #gamma##gamma# colliders. For a clear Higgs detection, it is important to fit the original electron accelerator energy depending on the Higgs mass, to set the polarization of the photon beams and to apply the efficient b quark tagging method. we demonstrate the extraction of information of Higgs parameters and the new physics from the observable physical quantities. It is clearly shown that a future #gamma##gamma# collider will have a rich potential for study on the new physics, as well as the Higgs physics. (author).

CERN Document Server

Heavy quark production in $\\gamma\\gamma$ collisions is analyzed within the approach to hard collisions of photons recently proposed by the author. In this approach evaluating the cross section $\\sigma(\\gamma\\gamma\\to Q\\bar{Q})$ in the ``next-to-leading order of QCD'' requires the inclusion of direct photon contributions up to the order $\\alpha^2\\alpha_s^2$, whereas in the standard approach direct photon terms only up to the order $\\alpha^2\\alpha_s$ are taken into account. Phenomenological consequences of this difference are discussed.

Energy Technology Data Exchange (ETDEWEB)

The effect of {ital in} {ital situ} photoexcitation during boron ion implantation on subsequent transient enhanced B diffusion in Si has been investigated. Photoexcitation using a mercury arc lamp was performed during B{sup +} implantation at 35 keV for a dose of 5{times}10{sup 14} cm{sup {minus}2} at 177 K. A reduction in the electrical activation dip, i.e., reverse annealing effect, in the temperature range 550--700 {degree}C was observed. Also, the transient enhanced diffusion of B, measured using SIMS following 800 {degree}C, 30 min annealing, was suppressed. Both effects demonstrate that the creation of self-interstitials during the implantation process is significantly reduced. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

International Nuclear Information System (INIS)

The temperature dependences of the Grueneisen parameter, heat capacity, bulk modulus and linear thermal expansion coefficient of sixteen III-V zincblende compounds are studied by first-principles response-function calculations. The fundamental relationships among these physical parameters are explored. Negative thermal expansions at lower temperature are found in most of these III-V phases except for the nitrides and boron compounds. By analyzing the cell-volume dependences of the phonon spectrum, it is found that the phases with a negative thermal expansion show a significant acoustic phonon weakening at the X-point in their phonon dispersion, while slight weakening is only seen around the L-point for those boron phases. There is no sign of phonon weakening in the nitrides. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Energy Technology Data Exchange (ETDEWEB)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10{sup 17} to 3 x 10{sup 19} cm{sup -3}. (Author).

Energy Technology Data Exchange (ETDEWEB)

An emergency shutdown system for high-temperature gas-cooled pebble-bed reactors is proposed in addition to the common absorber rod shutdown system. This system is based on the strongly absorbing effect of small boronated graphite spheres (called KLAK), which trickle in case of emergency by gravity from the top reflector into the reactor core. The inner reflector of the Siemens-Argonaut reactor was substituted by an assembly of spherical Arbeitsgemeinschaft Versuchsreaktor fuel elements, and the shutdown effect was examined by installing well-defined KLAK nests inside this assembly. The purpose was to develop and prove a calculational procedure for determining criticality values for assemblies of large fuel spheres and small absorbing spheres.

International Nuclear Information System (INIS)

Using electrochemical techniques of pH-metry and conductimetry, the choice of a suitable complexing reagent was made amongst ethylene glycol, propylene glycol, dextrose and mannitol for cost-effective separation of isotopes of boron by ion exchange chromatography. Quantitative relationships between pH and concentration; pK_a and concentration of each of these complexing reagents were determined by least square polynomial curve fitting and an attempt was made to determine the formation constants of mannitol-borate complex. The results of experiments carried out for selection; regeneration of a resin; separation factor determinations using batch as well as column techniques and monitoring of band movements using these electrochemical techniques are discussed. (author).

International Nuclear Information System (INIS)

Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).

International Nuclear Information System (INIS)

Accurate full-potential self-consistent linearized augmented-plane-wave (FLAPW) calculations have been carried out for hexagonal boron nitride. The resulting energy-band structure indicates that this material is an indirect-gap insulator and shows the existence of two unoccupied interlayer bands, similar to those found in graphite and graphite intercalation compounds. Chemical bonding is mainly covalent, with a small charge transfer towards the nitrogen atoms. Moreover, model-potential calculations, based on first-principles FLAPW wave functions and potentials, have been used to study slabs of thickness up to 35 layers. Contrary to the case of graphite, our results do not provide evidence of surface states associated with the interlayer bands.

International Nuclear Information System (INIS)

SIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of #approx#2E13cm"-"2. By systematic analysis, it is found that this anomalous diffusion is most significant in 700--800 C annealing, and it takes place in the initial stage (less than 30 sec for 800 C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1,000--1,100 C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.

International Nuclear Information System (INIS)

... alpha particles beta particles gamma radiation lead hot cells bricks shielding

Energy Technology Data Exchange (ETDEWEB)

The fundamental product of tetracycline hydrochlorine gamma radiolysis was separated in its solid state. From the results of spectroscopic studies it has been established that it is des-N,N-dimethylaminotetracycline.

International Nuclear Information System (INIS)

... gamma radiation l conversion m conversion mev range 10-100 mixing ratio

International Nuclear Information System (INIS)

... v. 33(4). beta-minus decay de-excitation delayed gamma radiation iron 64

Science.gov (United States)

The gamma spectra and lifetimes of the Ta and W isotopes havimg mass numbers 173, 175, 177, and 179 are determined. (T.F.H.)

International Nuclear Information System (INIS)

... EFFECT OF GAMMA RADIATION AND BAG PACKAGING MATERIALS ON

Energy Technology Data Exchange (ETDEWEB)

Short communication.

International Nuclear Information System (INIS)

The purpose of this study is to investigate the possibility of verifying depleted uranium (DU), natural uranium (NU), low enriched uranium (LEU) and high enriched uranium (HEU) by a developed digital gamma-gamma coincidence spectroscopy. The spectroscopy consists of two NaI(Tl) scintillators and XIA LLC Digital Gamma Finder (DGF)/Pixie-4 software and card package. The results demonstrate that the spectroscopy provides an effective method of "2"3"5U and "2"3"8U quantification based on the count rate of their gamma-gamma coincidence counting signatures. The main advantages of this approach over the conventional gamma spectrometry include the facts of low background continuum near coincident signatures of "2"3"5U and "2"3"8U, less interference from other radionuclides by the gamma-gamma coincidence counting, and region-of-interest (ROI) imagine analysis for uranium enrichment ...

Energy Technology Data Exchange (ETDEWEB)

Time-of-flight secondary ion mass spectrometry (ToF-SIMS) and laser post-ionization secondary neutral mass spectrometry (laser-SNMS) have been used to image and quantify targeted compounds, intrinsic elements and molecules with subcellular resolution in single cells of both cell cultures and tissues. Special preparation procedures for analyzing cell cultures and tissue materials were developed. Cancer cells type MeWo, incubated with boronated compounds, were sandwiched between two substrates, cryofixed, freeze-fractured and freeze-dried. Also, after injection with boronated compounds, different types of mouse tissues were extracted, prepared on a special specimen carrier and plunged with high velocity into LN{sub 2}-cooled propane for cryofixation. After trimming, these tissue blocks were freeze-dried. The measurements of the K/Na ratio demonstrated that for both cell cultures and tissue materials the special preparation techniques used were ...

International Nuclear Information System (INIS)

In this article carbon co-implantation and step-by-step thermal treatments of shallow p"+-n-junctions formation were used with the purpose of extended defect suppression and reduction of boron transient enhanced diffusion. A substantial improvement of the structural and electrical parameters of shallow p"+-n-junctions has been achieved by using the additional carbon implantation and step-by-step thermal treatments. (authors)

Energy Technology Data Exchange (ETDEWEB)

This report summarizes the activities and major accomplishments for the Idaho National Engineering and Environmental Laboratory (INEEL) Advanced Radiotherapy Research Program for calendar year 2002. Topics covered include computational dosimetry and treatment planning software development, medical neutron source development and characterization, and boron analytical chemistry.

International Nuclear Information System (INIS)

Full text of publication follows: Fission neutron irradiation to steels doped with isotope boron-10 is frequently conducted to study effects of the helium production on mechanical properties. The intrinsic mechanical properties of F82H steels could have been changed due to the boron doping. Recently, we reported that co-doping with boron and nitrogen to F82H (F82H+B+N) improved the mechanical properties of F82H doped only with boron. The mechanical properties of F82H+B+N are successfully comparable with the non-doped F82H before irradiation. In order to evaluate the effects of initial microstructure and helium production on radiation hardening, F82H and F82H+B+N were irradiate d Specimens used in this study were standard F82H martensitic steels, F82H steels doped with 60 mass ppm 10B and 200 ppm N (F82H+10B+N) and F82H steels doped with 60 mass ppm 11B and 200 ppm N (F82H+11B+N). Initial microstructures ...

International Nuclear Information System (INIS)

(Feb 1972). United States Swinth, KL Weber, JW San Francisco, Calif.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

The heavy Higgs bosons H,A of the minimal supersymmetric extension of the Standard Model can be produced as resonances in high-energy #gamma##gamma# colliders. Prospects of the search for these particles in bb-bar and neutralino-pair final states are studied in this report. Heavy Higgs bosons can be found with masses up to about 70-80% of the initial e"+e"- collider energy for moderate values of tan #beta#, i.e. in areas of the parameter space not accessible at other colliders.

Science.gov (United States)

The research sponsored by this grant was conducted in two fields of high-energy astrophysics:

International Nuclear Information System (INIS)

We study heavy physics effects on the Higgs production in #gamma##gamma# fusion using the effective Lagrangian approach. We find that the effects coming from new physics may enhance the standard model predictions for the number of events expected in the final states b-barb, WW, and ZZ up to one order of magnitude, whereas the corresponding number of events for the final state t-bart may be enhanced up to two orders of magnitude.

Energy Technology Data Exchange (ETDEWEB)

We investigate the scope of all relevant production modes of charged Higgs bosons in the MSSM, with mass larger than the one of the top quark, at future Linear Colliders operating in {gamma}{gamma} mode at the TeV energy scale. Final states with one or two H{sup {+-}} bosons are considered, as produced by both tree- and loop-level interactions. (orig.)

Energy Technology Data Exchange (ETDEWEB)

Short communication

Energy Technology Data Exchange (ETDEWEB)

The gamma-ray spectrum following neutron capture on /sup 87/Sr was measured at 3 neutron energies: E/sub n/ = thermal, 2 keV, and 24 keV. Gamma rays were detected in a three-crystal Ge(Li)-NaI-NaI pair spectrometer. Gamma-ray intensities deduced from these spectra by spectral unfolding are presented.