DEFF Research Database (Denmark)

We suggest and study designed defects in an otherwise periodic potential modulation of a two-dimensional electron gas as an alternative approach to electron spin based quantum information processing in the solid-state using conventional gate-defined quantum dots. We calculate the band structure and density of states for a periodic potential modulation, referred to as an antidot lattice, and find that localized states appear, when designed defects are introduced in the lattice. Such defect states may form the building blocks for quantum computing in a large antidot lattice, allowing for coherent electron transport between distant defect states in the lattice, and for a tunnel coupling of neighboring defect states with corresponding electrostatically ...

Energy Technology Data Exchange (ETDEWEB)

In scattering of channeled particles by point defects and in emission of gamma rays in the spontaneous-radiation spectral region conditions are attained where the momentum transferred to the defect is taken up by the crystal as a whole. This leads to coherent and interference effects in the radiation from the crystal defects. When the longitudinal momentum transferred is zero, an induced radiation effect appears in the transitions between the states of transverse motion.

DEFF Research Database (Denmark)

We propose a new physical implementation of spin qubits for quantum information processing, namely defect states in antidot lattices defined in the two-dimensional electron gas (2DEG) at a semiconductor heterostructure. Calculations of the band structure of a periodic antidot lattice are presented. A point defect is created by removing a single antidot, and calculations show that localized states form within the defect, with an energy structure which is robust against thermal dephasing. The exchange coupling between two electrons residing in two tunnel-coupled defect states is calculated numerically. We find results reminiscent of double quantum dot structures, indicating that the suggested structure is a feasible physical implementation of spin qubits.

International Nuclear Information System (INIS)

The defect-induced effect on superconducting transition temperature T_c of A-15 compounds is examined. T_c is found from the Eliashberg equations which take into account the defect-induced changes in the electron-phonon spectral function and electron density of states. The dependence of T_c on the defect type in the superconductor is obtained.

Energy Technology Data Exchange (ETDEWEB)

The electronic structure of the clusters (V/sub 3/Si/sub 4/)/sup 12 -/, (Nb/sub 3/Sn/sub 4/)/sup 12 -/(Mo/sub 3/Ge/sub 4/)/sup 15 -/ in crystalline V/sub 3/Si, Nb/sub 3/Sn, Mo/sub 3/Ge compounds is calculated by the Extended Hueckel method. The influence of different types of radiation induced defects on the density of states at the Fermi level (the anti-site defects, the displacement of atoms in linear chains, the vacancy-interstitial type defects) is considered.

International Nuclear Information System (INIS)

Measurements of the temperature dependence of the electrical resistivity and correlations observed with T/sub c/ for V_3Si, V_3Ge, and A-15 Nb-Ge show (i) the existence of a universal defect in the A-15 superconductors which is not nonstoichiometry, (ii) a normal state anomaly also strongly influenced by the defects, and (iii) evidence that T/sub c/ and the electron-phonon interactions for transport processes are approx.100 times more sensitive to defect producing sample modifications in the A-15 compounds than in Nb.

Energy Technology Data Exchange (ETDEWEB)

A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of ...

Science.gov (United States)

The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.

Energy Technology Data Exchange (ETDEWEB)

Self-consistent electronic structure calculations have been performed on two compositions of scandium sulfide ScS and Sc/sub 3/S/sub 4/. The results of the calculation of ScS are similar to those obtained for other transition metal chalcogenides and are in excellent agreement with heat capacity and reflectance measurements as well as UPS experiments. The calculation of the defect structure indicates the creation of sulfur p nonbonding states in metal-deficient ScS. The valency of the metal ions remains unchanged upon the creation of vacancies.

Energy Technology Data Exchange (ETDEWEB)

A case study is presented about the failure of a stainless steel blade reinforcing band in a steam turbine. The inspection results and analysis of samples of material are discussed. Being pitting corrosion and cracks the main defects found, a study of chemical composition and heat treatment state of the steel is made and findings are related to type of failure. (orig.)

International Nuclear Information System (INIS)

We report the fabrication of p"+/n junctions using Ge"+, C"+, and B"+ co-implantation and a spike anneal. The best junction exhibits a depth of 26 nm, vertical abruptness of 3 nm/decade, and sheet resistance of 520 Ohm/square. The junction location is defined by where the boron concentration drops to 10"1"8 cm"-"3. These junctions are close to the International Technology Roadmap specifications for the 65 nm technology node and are achieved by careful engineering of amorphization, stresses, and point defects. Advanced simulation of boron diffusion is used to understand and optimize the process window. The simulations show that the optimum process completely suppresses the transient-enhanced diffusion of boron and the formation of boron-interstitial clusters. This increases the boron solubility to 20% above the equilibrium solid-state solubility.

Energy Technology Data Exchange (ETDEWEB)

We have investigated the diffusion of Sb in Si in the presence of defects injected by high-energy implantation of Si ions at room temperature. MeV ion implantation increases the concentrations of vacancies, which induce transient-enhanced diffusion of Sb deposited in Si. We observed a significant enhancement of Sb diffusion. Secondary ions mass spectroscopy has been performed on the implanted samples before and after annealing. Rutherford-backscattering spectrometry has been used to characterize the high-energy implantation damage. By fitting diffusion profiles to a linear diffusive model, information about atomic scale diffusion of Sb, i.e. the generation rate of mobile state Sb and its mean migration length were extracted.

International Nuclear Information System (INIS)

The rates of spontaneous interbilayer and transbilayer exchange of ["3H]dimyristoylphosphatidylcholine (["3H]DMPC) were examined in the DMPC and DMPC/dimyristoylphosphatidylethanolamine (DMPE) large unilamellar vesicles in the liquid-crystalline-, gel-, and mixed-phase states. DMPC desorption rates from either gel or liquid-crystalline phases containing DMPE are very similar to the corresponding rates from pure DMPC gel or liquid-crystalline phases. The authors proposed that the DMPC/DSPC behavior results from packing defects in gel phases composed of both DMPC and DSPC molecules because of the four-carbon difference in the acyl chain lengths of the two species. The present results strongly support this hypothesis because no such anomalous behavior is observed in DMPC/DMPE, which is similar to DMPC/DSPC in phase behavior but does not have the chain length difference. These results are not consistent with lipid headgroup dehydration as the major ...

International Nuclear Information System (INIS)

A set of advanced models implemented into the simulator Sentaurus Process was applied to simulate ultra shallow junction formation by flash lamp annealing (FLA). The full path transient enhanced diffusion model includes equations for small interstitial clusters (I_2, I_3, I_4), #left brace#3 1 1#right brace# defects and dislocation loops. A dopant-point defect clustering model is used for dopant activation simulation. Several cluster types are considered: B_2, B_2I, B_2I_2, B_3I, B_3I_2, B_3I_3 for boron and As_2, As_2V, As_3, As_3V, As_4, As_4V for arsenic. Different point defect and dopant-point defect pair charge states are taken into account to obtain accurate results in the high doping level region. The flux expressions in the three-phase segregation model include a dependence on the doping level and point defect supersaturation. The FLA process was ...

International Nuclear Information System (INIS)

We present a description of the ground state and low-lying excited states of two holes in the 4x4 cluster t-J model in terms of a simple model for the motion of a single bipolaron. The existence of short-range antiferromagnetic correlations has been assumed. According to the suggested scenario, the formation of the bipolaron is mediated by the reduction of the magnetic energy in the case of two holes occupying nearest neighbor sites. The relevant part of the Hilbert space consists of wave functions corresponding to holes oscillating around pairs of nearest neighbor sites and trapped in a potential well due to strings of spin defects. Virtual processes which connect these states involve both the kinetic term and the transverse part of the Heisenberg Hamiltonian. Many properties of energy level schemes obtained by numerical diagonalizations such as the sequence of the lowest states ...

International Nuclear Information System (INIS)

We compute the entropy of a closed bounded region of space for pure 3d Riemannian gravity formulated as a topological BF theory for the gauge group SU(2) and show its holographic behavior. More precisely, we consider a fixed graph embedded in space and study the flat connection spin network state without and with particle-like topological defects. We regularize and compute exactly the entanglement for a bipartite splitting of the graph and show it scales at leading order with the number of vertices on the boundary (or equivalently with the number of loops crossing the boundary). More generally these results apply to BF theory with any compact gauge group in any space-time dimension.

Energy Technology Data Exchange (ETDEWEB)

A simplified relativistic configuration interaction method is used to study the dielectronic satellite transition processes. In this method, the infinite resonant doubly excited states can be calculated, and furthermore, the whole high-n dielectronic satellite transition processes can be treated conveniently by interpolation (rather than extrapolation) in the frame of quantum defect theory. As an example, we calculate the contributions from high-n dielectronic satellites to the K{alpha} resonance line in helium-like iron, and the results are in good agreement with the experimental measurements. (orig.) 39 refs.

Energy Technology Data Exchange (ETDEWEB)

A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and ...

Energy Technology Data Exchange (ETDEWEB)

Experiments on the depth dependence of transient enhanced diffusion (TED) of boron during rapid thermal annealing of Ge-preamorphized layers reveal a linear decrease in the diffusion enhancement between the end-of-range (EOR) defect band and the surface. This behavior, which indicates a quasi-steady-state distribution of excess interstitials, emitted from the EOR band and absorbed at the surface, is observed for annealing times as short as 1 s at 900 deg. C. Using an etching procedure we vary the distance x{sub EOR} from the EOR band to the surface in the range 80-175 nm, and observe how this influences the interstitial supersaturation, s(x). The supersaturations at the EOR band and the surface remain unchanged, while the gradient ds/dx, and thus the flux to the surface, varies inversely with x{sub EOR}. This confirms the validity of earlier modelling of EOR defect evolution in terms of Ostwald ripening, and provides ...

International Nuclear Information System (INIS)

The thermodynamics of the Sr-Si system is of fundamental importance for the understanding of eutectic modification of Al-Si alloys. At the same time, strontium silicides have recently been found to have potential applications in electronic devices. Renewed research efforts have led to a re-evaluation of the phase equilibria in this system, resulting in the discovery of previously undetected stable intermetallic compounds. In this work, we investigate the finite temperature thermodynamic properties of the stable (and metastable) Sr-Si intermetallics. The vibrational properties of the intermetallic compounds are calculated within harmonic theory, with quasi-harmonic corrections to account for the effects of thermal expansion. The total free energies of the compounds are computed considering vibrational and electronic contributions, as well as weak anharmonic corrections. The ground state of the system is predicted and compared to previous experimental and ...

Energy Technology Data Exchange (ETDEWEB)

Magnetic imaging in the transmission electron microscope (TEM) has been used to examine submicron elements with the aim of discovering down to what element size complex domain patterns can form. The elements were squares, circles, triangles, and pentagons in the size range 100{endash}500 nm and were made from 36 nm Co films or 8 nm Ni{sub 80}Fe{sub 20} (NiFe) with in-plane magnetization. The magnetic domain structures in these elements were imaged at high resolution using the differential phase contrast imaging mode in a TEM. Nonuniform magnetization structures were seen in the images. Vortices were present at remanence in all shapes of 36-nm-thick Co elements down to 100 nm size and in circular NiFe elements down to 116 nm diameter. Triangular NiFe elements did not have a vortex state at remanence, instead the magnetization curved round within the element but did not achieve complete flux closure. In simulations of square and circular NiFe elements, it was found ...

CERN Document Server

In culture migrating and interacting amoeboid cells can form nematic liquid crystal phases. A polar nematic liquid crystal is formed if the interaction has a polar symmetry. One type of white blood cells (granulocytes) form clusters where the cells are oriented towards the center. The core of such an orientational defect (disclination) is either a granulocyte forced to be in an isotropic state or another cell type like a monocyte. An apolar nematic liquid crystal is formed if the interaction has an apolar symmetry. Different cell types like human melanocytes (=pigment cells of the skin), human fibroblasts (=connective tissue cells), human osteoblasts (=bone cells), human adipocytes (= fat cells) etc., form an apolar nematic liquid crystal. The orientational elastic energy is derived and the orientational defects (disclination) of nematic liquid crystals are investigated. The existence of half-numbered disclinations show ...

Energy Technology Data Exchange (ETDEWEB)

The theoretical treatment of the relation between the critical angle of planar channeling and the characteristics of crystal lattice defects is carried out. The predictions are made about some typical forms of the critical angle dependence on the mean-square static displacement produced by defects, and then these predictions are detailed for the cases of homogeneous disordering, spherical clusters of point defects and dislocation loops. Analytical results are supported by the exact computer calculations for the defects in the intermetallic A-15 compounds.

International Nuclear Information System (INIS)

Objective: To survey the data for the state of health in the ambient residents of Daya Bay Nuclear Power Plant, and provide the background data to evaluate the state of health affected by fallout of nuclear power plant. Methods: The datas were collected by a radiation epidemiology. The investigation was carried out in the area within 20 km of radius from Daya Bay Nuclear' Power Plant, and the subjects who had lived there for three years or longer before January. 1,1993 and covered by the Household Registry were recruited to a cohort. Results: The mortality rate of overall cancer (per 100 000 PYr) was 88.57 (the standard mortality rate was 79.77 ), the mortality rate of leukemia (per 100 000 PYr) was 3.24 (the standard mortality rate was 2.94), the palpation rate of the goiter in 7-14 years old was 8.34%(9.69% in B ultrasonic), the morbidity rate of newborn's defect (per 100 00 P) was 82.33. The mortality of all cancers or ...

UK PubMed Central (United Kingdom)

Congenital deformities involving the coverings of the nervous system are called neural tube defects (NTDs). NTD can be classified as neurulation defects, which occur by stage 12, and postneurulation...Full Text Available

UK PubMed Central (United Kingdom)

Familial defective apolipoprotein (apo) B-100 is a genetic disease that leads to hypercholesterolemia and to an increased serum concentration of low density lipoproteins that bind defectively to the...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

Lebers hereditary optic neuropathy (LHON), the most frequent mitochondrial disorder, is mostly due to three mitochondrial DNA (mtDNA) mutations in respiratory chain complex I subunit genes: 3460/ND1, 11778/ND4 and 14484/ND6. Despite considerable clinical evidences, a genetic modifying role of the mtDNA haplogroup background in the clinical expression of LHON remains experimentally unproven. We investigated the effect of mtDNA haplogroups on the assembly of oxidative phosphorylation (OXPHOS) complexes in transmitochondrial hybrids (cybrids) harboring the three common LHON mutations. The steady-state levels of respiratory chain complexes appeared normal in mutant cybrids. However, an accumulation of low molecular weight subcomplexes suggested a complex I assembly/stability defect, which was ...

International Nuclear Information System (INIS)

The electronic structures of the set of molecular clusters of dielectric oxide crystals AWO4 (A = Pb, Cd, Zn), the sizes of which increase sequentially are ab-initio calculated by the Restricted Hartree-Fock (RHF) method. The results of calculations of molecular orbitals and energy dependences of partial densities of electronic states of different clusters are compared each to other and to experimental data. It is found that calculated electronic structures of the tungstate groups and cations which are surrounded in cluster by certain number of the nearest neighbor atoms of the crystals quite well represent the experimentally obtained value of the forbidden gap of corresponding AWO4 crystal. (authors)

International Nuclear Information System (INIS)

We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 degrees C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.

Energy Technology Data Exchange (ETDEWEB)

Hemodynamic characteristics were studied by using in vivo vascular imaging techniques in 17 resected early stage hepatocellular carcinoma (e-HCC) by comparing them with 49 resected advanced HCCs (ad-HCC) less than 3 cm in diameter. In this study, e-HCC was defined as the nodule being uniformly composed of well-differentiated HCC or adenomatous hyperplastic nodule containing well-differentiated HCC foci within the nodule. In vivo vascular imaging techniques are as follows; US angiography with intraarterial CO{sub 2} microbubbles were performed to assess the tumor arterial vascularity, and CT during arterial portography (CTAP) was performed to assess the portal perfusion within the nodule. Of 17 e-HCC nodules 5 were hypervascular, 5 were isovascular, 4 were hypovascular, and 3 were vascular spot in hypovascular pattern in contrast to 49 ad-HCC nodules, 43 of which were hypervascular and 6 were isovascular. Of 14 e-HCCs, 9 nodules showed perfusion defect and 5 did not ...

International Nuclear Information System (INIS)

The T/sub c/ behavior of vapor-deposited Nb_3Ge and Nb_3Sn is examined as a function of low-fluence alpha-particle irradiation. It is found that for Nb_3Sn with rho_0approx.15 #mu##OMEGA#-cm the T/sub c/ is insensitive to low doses of radiation, whereas Nb_3Ge with rho_0approx.50 #mu##OMEGA#-cm has its T/sub c/ depressed immediately with irradiation. It is suggested that the T/sub c/ behavior of A-15 superconductors in the regime of small dose is strongly influenced by the initial state of the sample. Furthermore, it is argued that the behavior of the T/sub c/ with dose can be qualitatively explained by considering a sharp structure in the density of states N(E), the smearing of which by defects leads to a depression in T/sub c/.

International Nuclear Information System (INIS)

Results of the evaluation of the scattered radiation effect on the image of defects in examined products are given. The formula is suggested which characterizes the image of defects on a scintillation screen as well as accumulation factors are calculated by the Monte-Carlo method. Values of fluctuations of absorbed energy in the screen used for the evaluation of sensitivity are experimentally obtained. The effect of high-energy bremsstrahlung on the defect detection is analyzed.

CERN Document Server

We prove the existence of defective secant varieties of three-factor and four-factor Segre-Veronese varieties embedded in certain multi-degree. These defective secant varieties were previously unknown and are of importance in the classification of defective secant varieties of Segre-Veronese varieties with three or more factors.

KoreaScience (Korea)

Full Text Available

British Library Electronic Table of Contents (United Kingdom)

This paper deals with surface defects of automobile outer panels, which alter significantly the vehicle quality. Such defects occur during springback, after forming or flanging steps, and are characterized by concave depression of small amplitude over the convex shape of the part. The aim of this work is to reproduce at the laboratory scale a surface defect that occurs after flanging on a geometry similar to a door upper corner. A dedicated device has been designed in order to generate small size surface defects during flanging of metallic thin sheets. The outer surface of the sample was digitalized and the spatial geometry of the defect was evaluated from curvature change along 2D profiles. This study shows that the flanging height does not influence significantly the surface defect geome...

International Nuclear Information System (INIS)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak ...

International Nuclear Information System (INIS)

A deep band of #left brace#311#right brace# defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the #left brace#311#right brace#-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The #left brace#311#right brace# defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the #left brace#311#right brace#-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion.

International Nuclear Information System (INIS)

Amorphization and a dual implant technique have been used to manipulate residual defects that persist following implantation and post-implant thermal treatments. Residual defects can often be attributed to ion-induced defect excesses. A defect is considered to be excess when it occurs in a localized region at a concentration greater than its complement. Sources of excess defects include spatially separated Frenkel pairs, excess interstitials resulting from the implanted atoms, and sputtering. Preamorphizing prior to dopant implantation has been proposed to eliminate dopant broadening due to ion channeling as well as dopant diffusion during subsequent annealing. However, transient-enhanced diffusion (TED) of implanted boron has been observed in pre-amorphized Si. The defects driving this enhanced boron diffusion are thought to be the extended interstitial-type ...

CERN Document Server

We point out that electromagnetic one-way edge modes analogous to quantum Hall edge states, originally predicted by Raghu and Haldane in 2D gyroelectric photonic crystals possessing Dirac point-derived bandgaps, can appear in more general settings. In particular, we show that the TM modes in a gyromagnetic photonic crystal can be formally mapped to electronic wavefunctions in a periodic electromagnetic field, so that the only requirement for the existence of one-way edge modes is that the Chern number for all bands below a gap is non-zero. In a square-lattice gyromagnetic Yttrium-Iron-Garnet photonic crystal operating at microwave frequencies, which lacks Dirac points, time-reversal breaking is strong enough that the effect should be easily observable. For realistic material parameters, the edge modes occupy a 10% band gap. Numerical simulations of a one-way waveguide incorporating this crystal show 100% transmission across strong defects, such ...

Energy Technology Data Exchange (ETDEWEB)

If climate changes are expected, their regional impacts are of special interest. Up to now (and in the near future) global climate models have been unable to deliver applicable results to describe the climate situation within a selected region (IPCC, 1995). That is why the description of the climate development in such an area must be realised by another possibility of creating meteorological data. Of importance besides is that the consistency in space and time and also between all meteorological parameters is not infracted. The used method proceeds on the assumption that the large scale changes of several meteorological parameters for a defined region calculated by a GCM can be regarded as correct as regards their tendencies. Based on such an assumption, long-term observed time series are prepared by statistical methods in such a way that they reflect the GCM-calculated changes by a scenario. The advantage of this method lies in the reduction of the defects of the ...

UK PubMed Central (United Kingdom)

Strategies to combine aspirated marrow cells with scaffolds to treat connective tissue defects are gaining increasing clinical attention and use. In situations such as large defects where initial...Full Text Available

International Nuclear Information System (INIS)

The federating theme of superconductivity has given rise to a number of experimental studies of point defects in solids as different as transition metals (V, Nb, ...), A-15 compounds (V_3Si, Nb_3Ge, ...), or perovskite-like copper oxides. Some of these experiments are presented here. (orig.).

International Nuclear Information System (INIS)

We present an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, #left brace#1 1 3#right brace#s and dislocation loops) which occurs during annealing of ion implanted silicon. The model describes the capture and emission of Si interstitial atoms to and from extrinsic defects of sizes up to thousands of atoms and includes a loss term due to the flux of interstitials to the recombining surface. Key input parameters of the simulation are the variations of the formation energy and of the capture efficiency with the size of the different defects. This model shows that the kinetics of the well-known dissolution of #left brace#1 1 3#right brace# defects is only driven by the recombination efficiency at the surface and the distance from the defects to the sample surface. We have subsequently used this model to study defect evolution in low and ...

UK PubMed Central (United Kingdom)

ObjectivesIn 2003, the Omani Ministry of Health Child Health Care Program initiated a national Birth Defects (BD) Register. This paper reviews the magnitude and risk factors of birth...Full Text Available

UK PubMed Central (United Kingdom)

Over the past two decades, combined advances in genetics, developmental biology and biochemistry have transformed the study of human birth defects. This review describes the importance of genome architecture,...Full Text Available

International Nuclear Information System (INIS)

A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two different Si"+ implant conditions have been considered. TEM analysis for the highest energy/dose shows that #left brace#1 1 3#right brace# defects evolve into dislocation loops whilst the defect depth distribution remains unchanged as a function of annealing time. For the lowest energy/dose, #left brace#1 1 3#right brace# defects grow and dissolve while the defect band shrinks preferentially on the surface side. At the same time, extraction of boron transient enhanced diffusion (TED) as a function of depth shows a decrease of the supersaturation towards the surface, starting at the location of the defect band. The study clearly shows that in these systems the silicon surface is the principal sink for ...

UK PubMed Central (United Kingdom)

Different tombusviruses were able to support the replication of either homologous or heterologous defective interfering (DI) RNAs, and those infected plants usually developed typical attenuated symptoms....Full Text Available

CERN Document Server

We show that in the Landau gauge of the SU(2) Yang-Mills theory the residual global symmetry supports existence of the topological vortices which resemble disclination defects in the nematic liquid crystals and the Alice (half-quantum) vortices in the superfluid heluim 3 in the A-phase. The theory also possesses half-integer and integer charged monopoles which are analogous to the point-like defects in the nematic crystal and in the liquid helium. We argue that the deconfinement phase transition in the Yang-Mills theory in the Landau gauge is associated with the proliferation of these vortices and/or monopoles. The disorder caused by these defects is suggested to be responsible for the confinement of quarks in the low-temperature phase.

KoreaScience (Korea)

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International Nuclear Information System (INIS)

This paper describes various eddy current probes, and their performance, which were developed at the Chalk River Laboratories of Atomic Energy of Canada. Included are probes for detecting defects at tubesheet regions in heat exchanger tubes, defects at expansion-transition regions in finned tubes, and defects in ferromagnetic tubes. All of these probes can be used with conventional commercially available instruments. (author).

International Nuclear Information System (INIS)

It is shown that low-frequency elastic vibrations of near-surface planar defects cause high-frequency ultrasonic radiation in surrounding air. The frequency conversion mechanism is concerned with contact nonlinearity of the defect vibrations and provides efficient generation of air-coupled higher-order ultraharmonics, ultrasubharmonics, and combination frequencies. The nonlinear air-coupled ultrasonic emission is applied for location and high-resolution imaging of damage-induced defects in a variety of solid materials.

Science.gov (United States)

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

International Nuclear Information System (INIS)

The defect-induced electron lifetime and energy-gap anisotropy effects on the T/sub c/ of the A-15 compounds are examined. A self-consistent model calculation demonstrates that the various defect dependences of T/sub c/ can be qualitatively understood in terms of the electron-lifetime effect.

International Nuclear Information System (INIS)

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

International Nuclear Information System (INIS)

Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The authors show how #left brace#311#right brace# defects arising after implantation are responsible for both enhanced dopant diffusion during annealing, and stable dislocations post-anneal. They observe #left brace#311#right brace# defects in the earliest stages of an anneal. They subsequently undergo rapid Ostwald ripening and evaporation. At low implant doses evaporation dominates, and they can quantitatively relate the interstitials emitted from these defects to the transient enhancement in diffusivity of dopants such as B and P. At higher doses Ostwald ripening is significant, and they observe the defects to undergo a series of unfaulting reactions to form both Frank loops and perfect dislocations. They demonstrate the ability to control both diffusion and dislocations by the addition of small amounts of ...

International Nuclear Information System (INIS)

In this paper, we study the effect of the Ge"+ preamorphization dose on boron diffusion and on the thermal evolution of end of range (EOR) defects during annealing. Amorphizations were carried out by implanting Ge"+ at 150 keV to doses ranging from 1x10"1"5 to 8x10"1"5 ions/cm"2. Boron was subsequently implanted at 3 keV with a dose of 1x10"1"4 ions/cm"2. Rapid thermal annealing (RTA) was performed for various time/temperature combinations in nitrogen ambient. Secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM) were used to study boron diffusion and defect evolution, respectively. We have found that after a given annealing, both the defect size and boron diffusivity are independent on the Ge ion dose. Increasing this dose only results in an increase of the defect density. These results are discussed and definitely show that EOR defects are involved in a ...

Science.gov (United States)

The critical currents of A-15 phase Nb(,3)Sn, V(,3)Si, Nb(,3)Ge, V(,3)Ga, and Nb-Sn with a few at.% Ga and Al(,2)O(,3) have been measured at temperatures up to T(,c) and in magnetic fields up to 8T to study fundamental flux pinning interactions as a function of defect size and density. The samples are electron beam evaporated films typically 2 (mu)m thick. Their particular usefulness for this study is that they span the clean to dirty limits and their normal state resistivity and grain size can be controlled by deposition parameters. The grain boundaries are the defects most responsible for flux pinning. The electron scattering mechanism is based on the local change in the coherence length due to increased conduction electron scattering and is chosen from among several possible mechanisms to calculate the elementary pinning force at a grain boundary. A direct summation of the elementary pinning force of each boundary is ...

International Nuclear Information System (INIS)

A magnetic measuring technique, which sorts out defects according to a distribution function n, was used to study the influence of electron irradiation on 50-50 NiFe. The distribution function is determined in terms of the maximum force f/subm/ that a defect can exert on a forward moving domain wall, or equivalently, the range z_0, which is the distance the mean position of the wall may move past the defect before the wall snaps free from the pinning action of the defect. The range and maximum force are related by a spring constant k, viz., f/subm/=kz_0. The quantity n (z_0) dz_0 gives the number of defects per unit volume having a range between z_0 and z_0+dz_0. Distribution functions were determined before and after electron irradiation. The irradiation was for 100 min with 18-MeV electrons with a dose of 1.1times10"1"7 e/cm"2. Following irradiation, there was a substantial ...

Energy Technology Data Exchange (ETDEWEB)

(001) CZ silicon wafers were implanted with arsenic (As{sup +}) at energies of 10--50 keV to doses of 2 {times} 10{sup 14} to 5 {times} 10{sup 15}/cm{sup 2}. All implants were amorphizing in nature. The samples were annealed at 700 C for 16 hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including ...

Energy Technology Data Exchange (ETDEWEB)

Accurate modeling of the enhanced diffusion of boron during rapid thermal annealing has been accomplished by incorporating the effects of extended defect formation and annealing on enhanced diffusion into a multizone, semiempirical model. The multizone model divides the implant profile into three zones defining regions of different defects and diffusion enhancements. The model also contains the initial enhanced diffusion and the transient diffusion effects associated with the dissolution of defect clusters and the annealing of extended defects, respectively. The saturation time for transient-enhanced diffusion contains an exponential function of implant dose in order to model the increase in point defect generated with higher implant dose. As a result, the model accurately simulates the boron diffusion profile over a wide range of implant doses and also shows the immobile boron peak ...

International Nuclear Information System (INIS)

At the importance increase of UT (ultrasonic testing) with the application of rules on fitness-for-service for nuclear power plants, JAPEIC (Japan power engineering and inspection corporation) started education training for defect detection and sizing technique. Weld joints specimen with EDM (Electro-Discharged Machining) notches, fatigue cracks and intergranular stress corrosion cracks were tested and practiced repeatedly based on a modified ultrasonic method and the defect size measuring accuracy of the trainees was surely improved. Results of the blind test confirmed effectiveness of education training. (T. Tanaka)

CERN Document Server

In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Environmental Research Database

ObjectivesObjectives Not AvailableDescriptionTo determine the effects of water penetration on the burst strength of filament wound composite pipes which have been damaged by impact and then subjected to long term pressurisation with sea water. ~%~ To monitor and characterise the damage and effects of sea water penetration using ultrasonic NDT. To determine the burst strength of bonded composite pipe joints with and without defects and to see whether the defects can be detected using ultrasonic NDT. [continued...

Energy Technology Data Exchange (ETDEWEB)

This study presents results from Monte Carlo radiation transport calculations aimed at characterizing a novel methodology being developed to detect partial defects in Pressurized Water Reactor (PWR) spent fuel assemblies (SFAs). The methodology uses a combination of measured neutron and gamma fields inside a spent fuel assembly in an in-situ condition where no movement of the fuel assembly is required. Previous studies performed on single isolated assemblies resulted in a unique base signature that would change when some of the fuel in the assembly is replaced with dummy fuel. These studies indicate that this signature is still valid in the in-situ condition enhancing the prospect of building a practical tool, Partial Defect Detector (PDET), which can be used in the field for partial defect detection.

International Nuclear Information System (INIS)

Defect cluster formation in 14-MeV neutron irradiated polycrystalline copper has been observed by transmission electron microscopy (TEM) and correlated with the increase in yield stress. The measurements indicate that the radiation hardening component of the yield strength in polycrystals is not directly additive to the unirradiated yield strength. A transitional behavior was observed for radiation hardening at low fluences, which produces an anomalous variation of the defect cluster barrier strength with fluence. The behavior is attributed to the effect of grain boundaries on slip band transmission. An upper limit for the room temperature barrier strength of defect clusters in neutron-irradiated copper was determined to be #alpha#=0.23. (orig.).

British Library Electronic Table of Contents (United Kingdom)

This paper introduces the application of independent component analysis mixture modelling (ICAMM) in non-destructive testing (NDT). The application consists of discriminating patterns for material quality control from homogeneous and defective materials inspected by impact-echo testing. This problem is modelled as a mixture of independent component analysis (ICA) models, representing a class of defective or homogeneous material by an ICA model whose parameters are learned from the impact-echo signal spectrum. These parameters define a kind of particular signature for the different defects. The proposed procedure is intended to exploit to the maximum the information obtained with the cost efficiency of only a single impact. To illustrate this capability, four levels of classification detail...

UK PubMed Central (United Kingdom)

The tetrapeptide KDEL is commonly found at the C terminus of soluble proteins of the endoplasmic reticulum (ER), and it contributes to their localization by interacting with a receptor that recycles...Full Text Available

Science.gov (United States)

Giant magnetoresistance (GMR) has been used with Eddy current testing to detect small defects not only in thin film structures but also in multilayered metallic structures. This work detected small scratches in the thin film under the surface where these defects were unable to be inspected or monitored by regular testing. In addition, rotational GMR magnetic sensor based Eddy current probes were used for detecting buried corner cracks at the edge of holes in metallic structures. The results of this study proved that giant magnetoresistance is very powerful and effective to sense the magnetic field, which is the result from the perturbation of the Eddy currents caused by a defect. This method can be used for quality control of metallization layers on silicon wafer and to detect cracks in thick structures such as cracks in aging aircraft.

UK PubMed Central (United Kingdom)

Mutation of the gene drop-dead (drd) causes adult Drosophila to die within 2 weeks of eclosion and is associated with reduced rates of defecation...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

To study the defect creation induced by electronic processes in refractory oxides, MgO single crystals were irradiated with high energy tin, uranium and lead ions. Optical absorption measurements showed that F-type centers (oxygen vacancies with trapped electrons) were created during irradiation. The total number of centers per unit area of bombarded sample increases linearly with irradiating fluence. The main part of the point defects was found to arise from electronic processes. The concentration of F-type centers induced by ionization increases with the electronic energy losses. Assuming a saturation of point defect concentration at high fluences, F-type center creation cross sections could be estimated. The influence of irradiation temperature and of the velocity of the bombarding ions are discussed.

Science.gov (United States)

... company. To automate this initial cutup requires a computer vision system that can locate and identify surface defects ... ...

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

Energy Technology Data Exchange (ETDEWEB)

Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of ...

UK PubMed Central (United Kingdom)

Vibrio cholerae 638 (El Tor, Ogawa), a new CTXΦ-negative hemagglutinin/protease-defective strain that is a cholera vaccine candidate, was examined for safety and immunogenicity...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

International Nuclear Information System (INIS)

Transient Enhanced Diffusion (TED) of boron in silicon is driven by the large supersaturations of self-interstitial silicon atoms left after implantation which also often lead to the nucleation and subsequent growth, upon annealing, of extended defects. In this paper we review selected experimental results and concepts concerning boron diffusion and/or defect behavior which have recently emerged with the ion implantation community and briefly indicate how they are, or will be, currently used to improve 'predictive simulations' softwares aimed at predicting TED. In a first part, we focus our attention on TED and on the formation of defects in the case of 'direct' implantation of boron in silicon. In a second part, we review our current knowledge of the defects and of the diffusion behavior of boron when annealing preamorphised Si. In a last part, we try to compare these two cases and to find out what are ...

International Nuclear Information System (INIS)

The exafs method is proposed as a more informative, universal one to investigate the radiation defects in solids. The successful results as obtained by the author using the synchrotron radiation source are reported for the first time. The measurements were carried out in GaAsP crystals irradiated with 50 MeV electrons.

CERN Document Server

We derive the expression for spontaneous emission rate in finite one-dimensional photonic crystal with arbitrary defects using the effective resonator model to describe electromagnetic field distributions in the structure. We obtain explicit formulas for contributions of different types of modes, i.e. radiation, substrate and guided modes. Formal calculations are illustrated with a few numerical examples, which demonstrate that the application of effective resonator model simplifies interpretation of results.

UK PubMed Central (United Kingdom)

The bioenergetic capacity of skeletal muscle in a 17-year-old patient with a severe defect in complex III of the electron transport chain has been examined by 31P NMR measurements of the molar ratio...Full Text Available

International Nuclear Information System (INIS)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational ...

Energy Technology Data Exchange (ETDEWEB)

Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several ...

International Nuclear Information System (INIS)

In the present paper we estimate the effect of sodium in the in-service inspection of non-magnetic steam generators tubes using eddy current technique and eddy current probes based on a differential double bobbin coil configuration. Experimental measurements of defects signals in steam generator tubes of fast breeder reactor are compared with simulations results of a two-dimensional axisymmetric finite element code to validate a reliable electromagnetic model of the system (eddy current coils, steam generator tube, defect) when there is no sodium on the outer steam generator tube surface. The electromagnetic code is used to evaluate the sodium band and sodium layer signals when a defect is located under steam generator support plate. Using a multi-frequency algorithm, its parameters are determined in the 'no sodium condition' (there is no sodium on the outer steam generator tube surface), defects signal ...

International Nuclear Information System (INIS)

A series of nine model ferritic alloys were ion irradiated at #propor to#300 C using 2.5 MeV He ions to a dose of 1.4 x 10"2"1 ion/m"2, which corresponds to #propor to#0.1 dpa at a depth of 2 #mu#m and #propor to#3.5 dpa at the peak damage region which occurs at about 4 #mu#m deep. The resultant changes in hardness as a function of depth were measured using a Nanoindenter "t"r"a"d"e"m"a"r"k. TEM was used to investigate the defect distributions. The effect of various solutes, Cu and N in particular, but Mn and Ti as well, on the change of hardness and the defect distribution due to the ion irradiation are discussed. (orig.).

International Nuclear Information System (INIS)

Until a decade ago, only the differential bobbin type eddy current probe was considered necessary for reliable heat exchanger tube inspection. The introduction of different tube materials, manufacturing processes and a variety of service induced failures has greatly increased the demands of eddy current testing. Optimized probe designs enhanced by improved instrumentation can help satisfy some of these demands. Some of the more difficult inspection problems are detection of circumferential cracks, fretting wear under non-ferromagnetic support plates and shallow internal defects. Reliable detection and sizing of such defects is often made more difficult by the fact they frequently occur in defect prone regions such as under tubesheets or support plates and in transition regions of finned tubes. Probe designs effective in overcoming these difficulties exist. This paper describes a number of such probes and their performance.

Energy Technology Data Exchange (ETDEWEB)

With steam generator check testing, the numerous types of defect not only have to be detected reliably but also to be identified correctly and classified according to depth. A priori, no signals are provided by the physical eddy-current mechanism, i.e. the disturbance of an excited eddy-current field by a defect, which will allow unambiguous identification and classification of the defects. The task, therefore, consists in designing the eddy-current method in terms of measurement technology in such a way as to obtain useful detection, identification and classification by a translation of the signals as simple and as save as possible. Internal through-flow wils and internal rotating probes were examined for their suitability to fulfill this three-pronged task with steam generator inspection.

British Library Electronic Table of Contents (United Kingdom)

The treatment of acetabular bone defects presents a great challenge in revision total hip arthroplasty (THA). The purpose of this study was to evaluate the clinical and radiological outcome of revision THA using jumbo cups for acetabular reconstruction after applying the bone-grafting technique. We studied 17?patients with acetabular defects ranging from Type 2A to Type 3A according to Paprosky`s classification. According to the AAOS-score twelve patients were classified as Type II and five patients as Type III. Uncemented press-fit cups with an outer diameter larger than 64?mm were used in all cases. Fifteen patients received morselized bone allografts. In eight patients an additional screw fixation was necessary. The mean follow-up period was 82?months (range 33?149). The mean Harris Hip...

Energy Technology Data Exchange (ETDEWEB)

The electrochemical performances of orthorhombic LiMnO{sub 2} compounds are analyzed in order to find a structural and/or morphological origin to the differences of electrochemical behaviours observed in compounds with different size of crystallites and different amounts of lattice defects. Energy capacity performances of 200 Ah/kg are reached for materials with crystallites of about 10{sup 7} Angstrom{sup 3} and with about 7% of defects, while energy capacities of only 80 Ah/kg are obtained for materials with ten times bigger crystallites. (J.S.) 3 refs.

Energy Technology Data Exchange (ETDEWEB)

Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the ``polymorphs`` of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes ``worm holes`` in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100{degrees}C lock in the mechanical twins.

Energy Technology Data Exchange (ETDEWEB)

The trend toward smaller dimensions in integrated circuit technology presents severe physical and engineering challenges for ion implantation. These challenges, together with the need for physically-based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in silicon. Recently the DOE Council on Materials requested that our panel examine the current status and future research opportunities in the area of ion beams in semiconductor processing. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. These topics were explored both from the perspective of emerging science issues and technology challenges.

Energy Technology Data Exchange (ETDEWEB)

Problems can sometimes occur during the construction of cast in-situ concrete piles. These foundations are formed by drilling a substantial hole into the ground and subsequently filling it with steel reinforcement and wet concrete. Several well-documented cases exist where concrete has not filled the hole and substantial voids have been left in the apparently completed pile. A theory has been developed by which it is possible to identify the nature, size and position of a finite defect within a suspect pile. The technique is based on the concept of receptances, and requires information obtained from vibration tests performed on piles after the concrete has hardened, and the nominal dimensions and material properties of the pile. The application of the theory is demonstrated using data relating to a pile with a known defect. The theory described in this paper ignores the effect of the surrounding soil; this can be included by further development ...

Energy Technology Data Exchange (ETDEWEB)

A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

International Nuclear Information System (INIS)

The magnetic hyperfine constants of the V sub(K) center in CaF_2, SrF_2 and BaF_2 have been calculated, assuming a phenomenological model, based on the F"-_2 'central molecule', to describe the wave function of the defect. The introduction of covalence with the ions neighboring the 'central molecule', has shown that this is a better description for the defect than a simple 'central molecule' model. It was also shown that the results for the hyperfine constants are strongly dependent on the relaxations of these neighboring ions, which have been determined by fitting the experimental data. The present results are compared with other previous calculations where similar and different methods have been used. A better description for the wave function of the defect is suggested. (author).

UK PubMed Central (United Kingdom)

Atypical hemolytic uremic syndrome (aHUS) is a heterogeneous disease that is caused by defective complement regulation in over 50% of cases. Mutations have been identified in genes encoding both complement...Full Text Available

International Nuclear Information System (INIS)

Generally, neutron, ion and electron Irradiations cause a substantial amount of hardening and significantly alter the deformation behavior of metals and alloys at relatively low irradiation temperatures. A radiation hardening is caused by the formation of microstructural defects such as dislocation loops, voids and precipitates under irradiation. Therefore, it is important to have a better knowledge of the irradiation induced microstructural defects under irradiation condition. As a part of the National mid- and long-term atomic energy R and D program, we are dealing with the radiation hardening behavior in Fe-Cr binary alloy. Fe-Cr binary alloy is a base alloy of Ferritic/Martensitic steel(F/M steel) planning to use for the Gen IV nuclear system. In this work, we investigated the radiation hardening and microstructural defect evolution in ion irradiated Fe-Cr alloys with irradiation temperature using nano-indentation ...

UK PubMed Central (United Kingdom)

Monogenic autoinflammatory diseases encompass a distinct and growing clinical entity of multisystem inflammatory diseases with known genetic defects in the innate immune system. The diseases...Full Text Available

UK PubMed Central (United Kingdom)

The Arabidopsis ref2 mutant was identified in a screen for plants having altered fluorescence under UV light. Characterization of the ref2 mutants showed that they...Full Text Available

UK PubMed Central (United Kingdom)

Patients with Alport syndrome progressively lose renal function as a result of defective type IV collagen in their glomerular basement membrane. In mice lacking the α3 chain of type IV collagen...Full Text Available

UK PubMed Central (United Kingdom)

We have recently reported that progeroid Zmpste24^−/− mice, which exhibit multiple defects that phenocopy Hutchinson-Gilford progeria syndrome, show a profound dysregulation...Full Text Available

UK PubMed Central (United Kingdom)

Prenatal cocaine exposure produces sustained neurobehavioral and brain synaptic changes closely resembling those of animals with defective alpha-amino-3-hydroxy-5-methyl-4-isoxazolepropionic...Full Text Available

UK PubMed Central (United Kingdom)

Osterix (Osx) is a zinc-finger-containing transcription factor that is expressed in osteoblasts of all endochondral and membranous bones. In Osx null ...Full Text Available

UK PubMed Central (United Kingdom)

Muscular dystrophies (MDs) comprise a group of degenerative muscle disorders characterized by progressive muscle wasting and often premature death. The primary defect common to most MDs involves disruption...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Ion implantation of Si (60 keV, 1{times}10{sup 14}/cm{sup 2}) has been used to introduce excess interstitials into silicon predoped with high background concentrations of B, which were varied between 1{times}10{sup 18} and 1{times}10{sup 19}/cm{sup 3}. Following post-implantation annealing at 740{degree}C for 15 min to allow agglomeration of the available interstitials into elongated {l_brace}311{r_brace} defects, the density of the agglomerated interstitials was determined by plan-view transmission electron microscopy observation of the defects. We report a significant reduction in the fraction of excess interstitials trapped in {l_brace}311{r_brace} defects as a function of boron concentration, up to nearly complete disappearance of the {l_brace}311{r_brace} defects at boron concentrations of 1{times}10{sup 19}/cm{sup 3}. The reduction of the excess interstitial concentration is interpreted in terms ...

Energy Technology Data Exchange (ETDEWEB)

Geometrically anisotropic eddy current probes are a type of separate function probes especially fit to the detection of defects showing a preferential direction. This kind of flaw induces a coupling between the transmitter and the receiver by guiding eddy currents from the one to the other. On the other hand, this coupling will be almost non-existent in the presence of defects or spurious effects not displaying this geometrical particularity. Basic studies on an elementary two-coil set-up allow the acknowledgment of the intrinsic qualities of such probes: good signal-to-noise ratio, influence field practically constant on the whole defect length, ability to detect bridged defects, insensitivity to lift off. These results can be improved by achieving multicoils probes adapted to different kinds of problems. An application to continuous casting slabs testing yields very interesting results in the ...

International Nuclear Information System (INIS)

A brief review is given of the nature of lattice instabilities in high-T/sub c/ superconductors. The Frohlich instability in A-15 compounds is indicated to be a microdomain which acts as an embryo for the Martensitic transformations in these compounds.

Science.gov (United States)

The goal of this study was to evaluate topics used to troubleshoot circuit boards with known or suspected thermally intermittent components. Failure modes for thermally intermittent components are typically mechanical defects, such as cracks in solder paths or joints, or broken b...

UK PubMed Central (United Kingdom)

In rats, damage to neuronal populations in some brain regions occurs in response to neonatal alcohol exposure coinciding with the period of rapid brain growth. These alcohol-induced defects...Full Text Available

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

UK PubMed Central (United Kingdom)

Carney-Stratakis syndrome, an inherited condition predisposing affected individuals to gastrointestinal stromal tumor (GIST) and paraganglioma, is caused by germline mutations in succinate dehydrogenase...Full Text Available

UK PubMed Central (United Kingdom)

Epidemiological data indicate that children conceived in vitro have a greater relative risk of low birth-weight, major and minor birth defects, and rare disorders involving imprinted...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Transient-enhanced diffusion (TED) during thermal annealing of ion-implanted B in Si is well established and attributed to the ion-induced, excess interstitials. On the other hand, the mechanism to account for TED of B in preamorphized (PA) Si remains unclear. Enhanced diffusion of the B persists in regrown layers even though the ion-induced interstitial defects responsible for TED in B{sup +}-only implanted Si are eliminated following regrowth. To test the hypothesis that TED in PA Si results from the {open_quotes}excess{close_quotes} interstitial-type defects below the amorphous-crystalline (a-c) interface, a buried PA layer has been recrystallized from the surface inward to the SiO{sub 2} interface of silicon-on-insulator material to eliminate all possible sources of excess interstitials. The effect on B diffusion and the role of the residual interstitial-type defects will be discussed. {copyright} {ital 1999 American ...

UK PubMed Central (United Kingdom)

In a previous study we found that nanofibrous poly(l-lactic acid) (PLLA) scaffolds mimicking collagen fibers in size were superior to solid-walled scaffolds in promoting osteoblast differentiation...Full Text Available

UK PubMed Central (United Kingdom)

Molecular chaperones protect cells from the deleterious effects of protein misfolding and aggregation. Neurotoxicity of amyloid-beta (Aβ) aggregates and their deposition in senile plaques are...Full Text Available

UK PubMed Central (United Kingdom)

SUMMARYAmeloblastin (AMBN) is the second most abundant extracellular matrix protein produced by the epithelial cells called ameloblasts and is found mainly in forming dental enamel....Full Text Available

CERN Document Server

We point out that the moduli sector of the $(2,2)$ string compactification with its nonperturbatively preserved non-compact symmetries is a fertile framework to study global topological defects, thus providing a natural source for the large scale structure formation. Based on the target space modular invariance of the nonperturbative superpotential of the four-dimensional N=1 supersymmetric string vacua, topologically stable stringy domain walls are found. They are supersymmetric solutions, thus saturating the Bogomolnyi bound. It is also shown that there are moduli sectors that allow for the global monopole-type and texture-type configurations whose radial stability is ensured by higher derivative terms.

Energy Technology Data Exchange (ETDEWEB)

The defects localization in power cables follows several steps: identification, pre-localization and precise localization. Pre-localization methods, other than echo-metry, are presented first: bridge methods, particular case of low voltage networks, future perspectives. Then, the precise localization methods are described: magneto-acoustic method, audible frequencies method. The particular case of underwater and high-voltage cables is considered too (oil and gas leaks detection). (J.S.)

Energy Technology Data Exchange (ETDEWEB)

Magnetic behavior in three compounds RTa{sub 3}O{sub 9} (R = Nd, Eu and Ho) with defect-perovskite structures has been investigated by DC magnetic susceptibility. The susceptibility of NdTa{sub 3}O{sub 9} shows strong influence of crystal field. For EuTa{sub 3}O{sub 9} a typical Van Vleck paramagnetism has been observed. HoTa{sub 3}O{sub 9} obeys a Curie-Weiss law above 20 K. (orig.) 8 refs.

CERN Document Server

Solid-state communications

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

To evaluate the radiological patterns of vascular invasion in peripheral cholangiocarcinomas. Hepatic arteriography and portography in 20 cases with cholangiocarcinoma including 12 cases with angiographic CT were retrospectively analyzed. The arteriography showed no arterioportal shunt, hypertrophy of tumor vessel, or tumor staining extending to central portion of the mass in all cases. However, doughnut shaped peripheral tumor staining was seen until late hepatogram phase in 12 cases and compensatory hyperperfusion around the mass was seen in six cases (eight cases if include arterial CT). Encasement of tumor vessel was seen in 12 cases, and hypertrophy of feeding vessel in nine cases. On portography, the filling defect on segmental portal branch could be demonstrated only in 11 cases. Shape of the portal defect was tapered narrowing in six cases, abrupt narrowing in two cases but intraluminal nodular filling defect was ...

Energy Technology Data Exchange (ETDEWEB)

The evaluation of possible manufacture-based defects in turbine shafts and housings for component serviceability relevance is of particular interest not only in post-manufacturing NDT but also in evaluation of NDT results obtained by in-service inspections of components with long service lives. The results discussed in the paper are summarized as follows: Most of the examined natural defects in the forgings and castings behave like cracks under the simulated operating conditions and hence may well be evaluated by fracture mechanical methods for their serviceability relevance determined by crack propagation under fatigue, creep and creep-fatigue stress. The empirical correlation of true defect size and US testing results (echo signal, echodynamics, attenuation) permits improved determination of true defect sizes in the turbine components. Care has to be taken to select the proper testing and evaluation ...

Energy Technology Data Exchange (ETDEWEB)

Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial ...

Energy Technology Data Exchange (ETDEWEB)

As semiconductor device density and wafer area continue to increase, the volume of in-line and off-line data required to diagnose yield-limiting conditions is growing exponentially. To manage this data in the future, analysis tools will be required that can automatically reduce this data to useful information, e.g., by assisting the engineer in rapid root-cause diagnosis of defect generating mechanisms. In this paper, the authors describe a technology known as Spatial Signature Analysis (SSA) and its application to both optically-detected defect data as well as electrical test (e-test) bin data. The results of a validation study are summarized that demonstrate the effectiveness of the SSA approach on optical defect wafermaps through field-testing at three semiconductor manufacturing sites on ASIC, DRAM and SRAM products. This method has been extended to analyze and interpret electrical test data and to provide a pathway for ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

Not Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

Not Available

Science.gov (United States)

This study evaluated whether differences in design of 3-dimensional polylactic acid barriers (EPi-Guide and Guidor) would influence hard tissue results in the treatment of Grade II furcations in humans. A multicenter study was conducted, using 40 patients with moderate to advanced bilateral chronic adult periodontitis of the mandibular first or second molars. After flap access, debridement, and root preparation, surgical bone level measurements were taken and membranes were placed on a random basis. Surgical reentry occurred at 1 year. Data collected from all 3 investigative centers were pooled and analyzed using an analysis of variance appropriate for a counterbalancing design. Both barrier materials resulted in significant gains of attachment level and defect reduction. The composite reduction in the vertical component of the osseous defects was greater in the sites treated with Epi-Guide as compared to those treated with Guidor; the ...

Energy Technology Data Exchange (ETDEWEB)

Replication-defective vectors derived from reticuloendotheliosis virus were used to transduce exogenous genes into early somatic stem cells of the chicken embryo. One of these vectors transduced and expressed the chicken growth hormone coding sequence. The helper cell line, C3, was used to generate stocks of vector containing about 10/sup 4/ transducing units per ml. Injection of 5- to 20-..mu..l volumes of vector directly beneath the blastoderm of unincubated chicken embryos led to infection of somatic stem cells. Infected embryos and adults contained unrearranged integrated proviral DNAs. Embryos expressed the transduced chicken growth hormone gene and contained high levels of serum growth hormone. Blood, brain, muscle, testis, and semen contained from individuals injected as embryos contained vector DNA. Replication-defective vectors of the reticuloendotheliosis virus transduced exogenous genes into chicken embryonic stem cells in vivo.

Energy Technology Data Exchange (ETDEWEB)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of ...

Energy Technology Data Exchange (ETDEWEB)

Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P{sup +}N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P{sup +}N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically active. These results ...

Energy Technology Data Exchange (ETDEWEB)

General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional ...

Science.gov (United States)

Bone matrix gelatin, prepared by sequential chemical treatment including decalcification with 0.6 N hydrochloric acid [9], was used as an alloimplant for the treatment of benign bone tumours, tumorous conditions of bone, acetabular dysplasia, delayed union, traumatic bone defects and other disorders. The bone matrix gelatin implanted into bone defects was incorporated successfully in 98% of implantations, excluding cases of infection, tumour recurrence and recurrence of tumorous conditions. The material was also implanted into ten bone sites as an onlay but in five it was resorbed without new bone formation. The incorporation of the bone matrix gelatin into the recipient bed was completed from 6 to 33 months (average 14.9 months) after implantation. Wound infection complicated 5 of 165 implantations (3%) in previously uninfected sites. Low grade fever persisting after the tenth post-operative day (a probable sign of immunological reaction) ...

Energy Technology Data Exchange (ETDEWEB)

The DGs (Diesel Generators) in NPP (Nuclear Power Plant) has been used for the emergency electric power source to shot down the nuclear reactor safety in case of station blackout. The RCM (Reliability Centered Maintenance) has been applied to DGs for increasing the safety of NPP. The structured defects of DG were not remedied by the improvement of maintenance method. As the first stage of RCM, to find the structured defect, its failure= models were searched and analyzed through the ten year maintenance information. The structured defects such as the air compressor, the lubricating oil pressure, and the insufficient load were the root causes of main failures. The air reservoir reinstallation, the lubricating oil tube modification, the load bank installation, and the qualitative instrumentation were the solutions for the hardware oriented RCM of DGs. There remains the software oriented RCM such as the rejection of useless ...

International Nuclear Information System (INIS)

The downstream failure of cable during winding, insulating, coil winding, and coil assembly is a significant issue in magnet production. The impact of these failures is costly both financially and because of the time needed to recover from them. The current approach to cabling has been to visually inspect the cable for any gross defects during cabling. To date this has been effective in finding small defects such as crossovers, which drastically reduce the mechanical integrity of the strand and thus of the cable itself. But because of the large volume of cable that will be manufactured, an automated flaw detection system that can inspect the cable and detect these types of defects will be needed. We have recently done an on-line experiment using an Eddy current system and specialized Eddy current probes to inspect cable during manufacturing. We will present the results of our inspection, demonstrating detection of ...

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during ...

Energy Technology Data Exchange (ETDEWEB)

Purpose: To describe the clinical aspects and evaluate optical coherence tomography of macular microholes. Methods: Seven patients were assessed (8 eyes) with microholes of the macula. All patients underwent complete eye examination, fundus photography, fluorescent angiography and OCT-3 imaging. Results: Ages ranged from 26 to 69 years. Six patients were female (85.7%) and five of them had microhole in the right eye. The presenting symptom was decrease in visual acuity (71.3%) and central scotoma in (14.3%). Five eyes (71.4%) had no defects shown by fluorescent angiography. A defect in the outer retina was demonstrated in all eyes on optical coherence tomography. The lesions were nonprogressive. Conclusion: Macular microholes are small lamellar defects in the outer retina. The condition is nonprogressive, generally unilateral and compatible with good visual acuity. Fundus biomicroscopy associated with an optical coherence ...

Energy Technology Data Exchange (ETDEWEB)

A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re-emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room-temperature implant at 40 keV, 5{times}10{sup 13} cm{sup {minus}2} Si into (001)Si, followed by a high temperature (815{degree}C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the {open_quote}{open_quote}+1{close_quote}{close_quote} model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects. ...

Energy Technology Data Exchange (ETDEWEB)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the ...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of As-implanted Si. The relations of the enhanced diffusion to residual defects and lattice restoration have been studied in detail. The As concentration profiles and residual defects are measured. It is found from the data that the lattice has been restored when the implanted sample is annealed at 1150 deg C (or 1050 deg C) for 1s. The defect density decreases rapidly with increase of annealing time (from 1 to 12s). The enhanced diffusion coefficient maximum appears in the annealing time ranging from 1 to 5s. Allmost a 'complete' annealing of displacemet damage is obtained and the diffusion coefficient is less than that in above-mentioned conditions when the implanted samples are annealed at 1150 deg C in the time ranging from 12 to 20s. the mechanism of lattice restoration and enhanced diffusion in annealing process have been ...

International Nuclear Information System (INIS)

... de-excitation excited states gamma radiation inelastic scattering mev range

Science.gov (United States)

... Accession Number : ADD419981. Title : Flue Gas Desulfurization and Its Alternatives: The State of the Art,. Corporate Author ...

CERN Document Server

We report the first experimental generation and characterization of a six-photon Dicke state and demonstrate its remarkable versatility by projecting out four- and five-photon Dicke states, in addition to four-photon GHZ- and W-states. These multipartite states are studied by developing experimentally favorable characterization tools. Furthermore, we show that Dicke states have interesting applications in multiparty quantum networking protocols such as open-destination teleportation, telecloning and quantum secret sharing.

Energy Technology Data Exchange (ETDEWEB)

How to decide which mine surface tasks may be performed by industrial robots to improve productivity and working conditions is described. Charts are presented of the industrial tasks performed on the surface and how each task may be classified as light, average, difficult or very diffcult according to a defect criteria is explained (defective operations are those which involve, heavy, harmful, stressful or dangerous jobs). The results of these calculations are used to identify which operations are suitable for first introduction of robots since traditional automation methods cannot be used, e.g. various storage, loading and packaging tasks, coal selection, sorting and removal of foreign matter, provision of services such as food preparation, cleaning, etc. Robots may also be used to control automated operations that are monotonous and hazardous for human operators. It is envisaged that in the future computer programmed robots with artificial ...

British Library Electronic Table of Contents (United Kingdom)

Irradiation of EP-823 (16Cr12MoWsiVNbB) ferritic-martensitic steel with 7-MeV Ni++ ions and with 30- and 70-keV He+ ions at a temperature of 500?C was followed by an increase in the microhardness, which was due to both radiation point defects and changes in the phase composition and the dislocation structure of the steel. It was found that the dependence of the largest relative increase in the microhardness on the concentration of radiation-induced point defects in the near-surface region of the steel under irradiation with different ions correlated with an analogous dependence of the surface segregation of silicon and chromium.

British Library Electronic Table of Contents (United Kingdom)

Design rules for robustness require insensitivity to local failure and the prevention of progressive collapse. This is often verified by applying the load case ''removal of a limited part of the structure''. This paper will evaluate typical structural systems for large-span timber roof structures against these requirements, comparing the results against typical reasons for damages and failures. Applying the finding that most failures of timber structures are not caused by random occurrences or local defects, but by global (repetitive) defects (e.g. from systematic mistakes), it is shown that the objective of load transfer-often mentioned as preferable-should be critically analysed for such structures. Based on these findings, proposals for structural systems and details towards a robust de...

International Nuclear Information System (INIS)

This paper is concerned with the real time automatic discriminating of flaws from two categories; i. cracks (planar defect) and ii. Non-cracks (volumetric defect such as cluster porosity and slag) using pulse-echo ultrasound. The raw ultrasonic flaws signal were collected from a computerized robotic plane scanning system over the whole of each reflector as the primary source of data. The signal is then filtered and the analysis in both time and frequency domain were executed to obtain the selected feature. The real time feature analysis techniques measured the number of peaks, maximum index, pulse duration, rise time and fall time. The obtained features could be used to distinguish between quantitatively classified flaws by using various tools in artificial intelligence such as neural networks. The proposed algorithm and complete system were implemented in a computer software developed using Microsoft Visual BASIC 6.0 (author)

International Nuclear Information System (INIS)

The authors have shown that toxicity of paraquat for Escherichia coli is increased over 1-fold in strains defective in the biosynthesis of spermidine compared to isogenic strains containing spermidine. The increased sensitivity of these spermidine-deficient mutants to paraquat is eliminated by growth in medium containing spermidine or by endogenous supplementation of spermidine by the use of a speE"+D"+ plasmid. No paraquat toxicity is seen in the absence of oxygen, even in amine-deficient strains, indicating that superoxide is the agent responsible for the increased toxicity. However, the specific mechanisms responsible for the increased paraquat toxicity in the spermidine-deficient mutants remain to be determined. The marked sensitivity to paraquat of E. coli deficient in spermidine is of particular interest, since such mutants have no other phenotypic properties that can be easily assayed. This increased sensitivity has been used as the basis of a convenient ...

International Nuclear Information System (INIS)

The paper studies the effect of crystal structure of LiNbO_3 monocrystals on NMR spectra of "7 Li and "9"3 Nb. Models of defect structure are analyzed via comparison of NMR experimental spectra and gradients of electrical field predicted on the basis of the calculations on "7 Li and "9"3 Nb nuclei using the relevant model. It is shown that no one of the main models of lithium niobate defect structure explains the peculiarities of NMR spectra. Conclusions are made about the independence of the reasons of occurrence of NMR additions lines "7 Li and "9"3 Nb, as well as, about links of "9"3 Nb NMR weak additional lines with the ranges of a different crystalline phase that may form while growing. 18 refs., 2 figs., 3 tabs.

International Nuclear Information System (INIS)

Lifetime of minority charae carriers in the Si and Ge p-n unctions has been measured by pulse method of conductivity modulation of base. Its dependence on the X-ray radiation dose has been investigated. Dependence of current transmission coefficients on the dose has been measured and their sharp decrease at low doses and the following saturation at high doses have been observed. Linear dependence of lifetime on X-ray radiation dose has been obtained. Resulting from the comparison of regularities of the change of lifetime due to current characteristics, it has been shown that X-ray radiation leads to the formation of the surface defects, influencing the change of current characteristics as well as to stationary structural defects, causing the decrease of lifetime of the charge carriers with the increase of X-ray radiation dose.

Energy Technology Data Exchange (ETDEWEB)

As a general approach to the problem of precursive behavior in alloys that undergo a displacive transformation, defect theories are becoming increasingly popular. However, the microscopic origin of the proposed defects is usually not considered. Yu and Anderson (1984) have argued that properties of strong-coupling superconductors, such as the A-15 compounds, imply a breakdown of Migdal's theorem (the adiabatic, or Born-Oppenheimer approximation for separation of electrons and phonons) in these systems. The electron-phonon coupling is so strong that it must be incorporated already in zeroth order. This is the basis for local phonon models, in which the electron-phonon coupling provides an effective double well potential for a localized group of atoms. The Yu-Anderson model and an analogous local Jahn-Teller model (Abell, 1983) are reviewed in connection with displacive transformations in strong-coupling alloys.

International Nuclear Information System (INIS)

The surface permeability of concrete walls and floors in houses was measured with a specially designed permeameter, based on measuring the air-flow induced by a pressure difference across a temporary test seal applied to a surface. The permeability of bulk concrete is 10"-"1"6 m"2. Areas free of surface defects had permeability ranging from 10"-"1"4 to 10-"1"6 m"2. However, surface defects are common on concrete wall surfaces, which increase the permeability to >10"-"1"2 m"2. This is too high for standard seal designs to be adequate as the only method of soil gas and radon exclusion. Satisfactory seals require either extended contact width or mechanical removal of the surface layer. (orig.). (2 figs., 1 tab.).

British Library Electronic Table of Contents (United Kingdom)

A series of desilicated ZSM-5 catalysts previously shown to have improved catalytic performance in the MTG (methanol-to-gasoline) reaction [M. Bjorgen, F. Joensen, M.S. Holm, U. Olsbye, K.-P. Lillerud, S. Svelle, Appl. Catal. A 345 (2008) 43] was subjected to thorough examination using FTIR. Clearly, defects represented by internal Si-OH sites are removed upon NaOH treatment. In a parallel manner, free Si-OH sites increase in concentration and the results point to a selective mechanism for formation of mesopores as the framework dissolution preferentially takes place at defective sites in the crystallites. The acid properties of the desilicated materials were investigated by applying CO and collidine (2,4,6-trimethylpyridine) as molecular probes. Monitoring the induced frequency shifts upo...

Energy Technology Data Exchange (ETDEWEB)

Eddy current testing (ECT) method is widely used as the non-destructive evaluation (NDE) of the various kinds of material degradation occurring in nuclear power plants (NPPs) components including steam generator (SG) tubes. Detection of any defects or flaws in the steam generator tubes in the early stage is very important in maintenance of NPP for its primary role as the pressure boundary with thin wall thickness. Although the ECT technique provides lots of information for a SG management, it has a generic problem in its reliability due to a low ability in detect of small defects and some difficulty in a signal analysis. For the improvement of these shortcomings in conventional ECT, profile-MRPC (motorized rotating pancake coil) ECT technology was developed in KAERI. The key of this new technology is the development of new eddy current probes, designated as a diagnostic probe (D-probe). The D-probe is furnished with a simultaneous dual function ...

International Nuclear Information System (INIS)

Surface-sensitive UV photoelectron yield spectroscopy was employed to study electron acceptor levels at surfaces of chalcopyrite structure Cu-In-Se thin films. Surface Fermi level pinning was observed for Cu-rich films. Shallow acceptor levels ascribable to defects Cu_I_n and V_C_u were observed for near-stoichiometric and In-rich films respectively. (orig.).

Energy Technology Data Exchange (ETDEWEB)

I discuss several examples of critical phenomena in O(N) models where topological excitations play an important role at criticality. I focus particular attention on the O(2) model in 3D, where recent measurements of the vortex string length distribution in equilibrium suggest the existence of a quantitative picture of the critical behavior in terms of defects. The compatibility of this perspective with renormalization group predictions is examined.

International Nuclear Information System (INIS)

The paper reports the recovery of zinc and cadmium following 6.1 MeV alpha particle irradiation at 4.2 K as studied by means of electrical reistivity measurements. Specimens of 10 #mu#m thick have been used in order to obtain a homogeneous defect distribution over the whole thickness of the specimen. The pre-irradiation resistivity ratios were 700 and 750 for cadmium and zinc, respectively. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

This paper presents the results of the Spatial Signature Analysis (SSA) Electrical-test (e-test) validation study that was conducted between February and June, 1998. SSA is an automated procedure developed by researchers at the Oak Ridge National Laboratory to address the issue of intelligent data reduction while providing feedback on current manufacturing processes. SSA was initially developed to automate the analysis of optical defect data. Optical defects can form groups, or clusters, which may have a distinct shape. These patterns can reveal information about the manufacturing process. Optical defect SSA uses image processing algorithms and a classifier system to interpret and identify these patterns, or signatures. SSA has been extended to analyze and interpret electrical test data. The algorithms used for optical defect SSA have been adapted and applied to e-test binmaps. An image of the binmap is ...

International Nuclear Information System (INIS)

The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taken into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. (authors)

Science.gov (United States)

Attention is given to recent research on gear fault diagnostic techniques. A mathematic model for vibration signals of defective gears is presented. Novel methods of gear fault diagnosis, such as zoom complex envelope analysis, wideband demodulation techniques, bispectrum analysis, correlation spectrum analysis, and maximum entropy spectrum analysis, are demonstrated. The wide-band demodulation technique is found to exhibit a high SNR. Bispectrum and correlation spectrum are excellent for some mechanical fault forms.

CERN Document Server

This handbook is a unique compendium of knowledge on all aspects of the physics of liquid crystals. In over 500 pages it provides detailed information on the physical properties of liquid crystals as well as the recent theories and results on phase transitions, defects and textures of different types of liquid crystals. An in-depth understanding of the physical fundamentals is a prerequisite for everyone working in the field of liquid crystal research. With this book the experts as well as graduate students entering the field get all the information they need.

Energy Technology Data Exchange (ETDEWEB)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

CERN Document Server

We report an observation of a delayed all-optical routing/switching phenomenon based on ultraslow group velocity of light via nondegenerate four-wave mixing processes in a defected solid medium. Unlike previous demonstrations of enhanced four-wave mixing processes using the slow light effects, the present observation demonstrates a direct retrieval of the resonant Raman-pulse excited spin coherence into photon coherence through coherence conversion processes.

Energy Technology Data Exchange (ETDEWEB)

This report discusses the following topics: Prompt fission neutron energy spectra for {sup 235}U and {sup 239}Pu; Two-parameter measurement of nuclear lifetimes; ``Black`` neutron detector; Data reduction techniques for neutron scattering experiments; Inelastic neutron scattering studies in {sup 197}Au; Elastic and inelastic scattering studies in {sup 239}Pu; and neutron induced defects in silicon dioxide MOS structures.

Energy Technology Data Exchange (ETDEWEB)

Defects in mismatch repair genes cause the genetic instability characteristic of hereditary nonpolyposis colorectal cancer and a subset of sporadic colon tumors. The newest member of the mismatch repair gene family, GTBP, has recently been identified as a partial cDNA. Here, we describe the isolation of its 5{prime} terminus, allowing definition of the entire coding region. Several polymorphisms within the 5{prime} end were identified and are presented. 13 refs., 1 fig.

International Nuclear Information System (INIS)

Klippel-Feil Syndrome (KFS) is a congenital anomaly characterized by a defect in the formation or segmentation of the cervical vertebrae. The clinical triad consists of short neck, low posterior hairline and limited neck movement. Multiple congenital anomalies have been associated with this disease. This is a case of KFS in a young girl along with situs inversus, which is an extremely rare association. Various systemic associations occurring in this multi-system disorder are also discussed. (author)

UK PubMed Central (United Kingdom)

Biglycan (bgn)-deficient mice (KO) have defective osteoblasts which lead to changes in the amount and quality of bone. Altered tissue strength in C57BL6/129 (B6;129) KO mice, a property which...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The Focused-Ion-Beam (FIB) is a powerful tool for fast, precision cross-sectioning and inspection of submicron defects in multilayered integrated circuit devices. However, the low contrast between the layers in FIB cross-sections can make the feature of interest difficult to observe, which has become a limitation for FIB cross-sectioning. A technique using plasma etch to decorate the FIB cross-sections has proven to be a simple solution to overcome this limitation.

Energy Technology Data Exchange (ETDEWEB)

Focused ion beam (FIB) repair of chromium defects on photomasks and reticles leaves a post repair stain in the quartz substrate. The wavelength dependent absorption properties of typical stained regions have been measured, showing transition losses up to 80% in the deep uv. A simple model is in good qualitative agreement with the experimental results. (author).

UK PubMed Central (United Kingdom)

Bony craniofacial deficits resulting from injury, disease, or birth defects remain a considerable clinical challenge. In this study, microsphere-based scaffold fabrication methods were use to...Full Text Available

International Nuclear Information System (INIS)

In in-service inspection of steam-generator tubes, the need for reproducibility of the measurement results and for comparison of these results over two successive inspections has led EDF to specify the main characteristics of the eddy-current probes and to design equipment to measure them. This equipment is presented here and the electrical and magnetic results are correlated with those obtained by testing tubes with reference defects.

UK PubMed Central (United Kingdom)

Fifty-six tuberculosis patients and twenty-eight control subjects were evaluated in a comprehensive investigation of cellular and humoral immune function in pulmonary TB. The patient group showed significantly...Full Text Available

UK PubMed Central (United Kingdom)

Transcriptional silencing in Saccharomyces cerevisiae occurs at several genetic loci, including the ribosomal DNA (rDNA). Silencing at telomeres (telomere position effect [TPE])...Full Text Available

International Nuclear Information System (INIS)

Ultra-shallow junction formation in deep submicron Si devices is limited by anomalous diffusion of the dopant, which is related to the release of interstitials from defect clusters formed during the implantation of energetic ions or the subsequent annealing. The work described in this dissertation is concerned with the effects of low energy B ion implantation, especially damage formation, clustering and its annealing. After a review of the stopping and ranges of energetic ions in Si, the formation of implant damage, in particular of point defects, their migration, agglomeration and annihilation, including the involvement of dopant ions, is considered. A description of the Salford ultra low energy implanter is given and the main analysis technique, medium ion energy scattering (MEIS) reviewed. Additional analytical techniques used, such as secondary ion mass spectrometry (SIMS), 4-point probe and cross section transmission microscopy (XTEM) as ...

International Nuclear Information System (INIS)

A scheme is presented for the generation of entangled states for two cavity mirrors. In the scheme each mirror initially in a vacuum state interacts with a weak coherent field, resulting in a photon-number dependent kick. The detection of a photon leaking from the cavities collapses the two mirrors to an entangled state.

Energy Technology Data Exchange (ETDEWEB)

Algebraic properties of the analytical model, describing electro-magnetic weak interaction with the two-level system with two-fold degenerate state are considered. The expressions for the coherent states and Green function of the system are obtained.

British Library Electronic Table of Contents (United Kingdom)

We propose a method for the creation of arbitrary superposition of N atomic states using generalized stimulated Raman adiabatic passage (STIRAP) techniques with laser fields coupling each one of N lower states to a single upper state in a Formula Not Shown -level atomic system. Formula Not Shown dark states that are composed of N lower states span a dark subspace. In the adiabatic limit, the dark and bright subspaces are decoupled, thus the nonadiabatic interaction within this dark subspace dominates the evolution of the system. Different from general methods to create our required coherent superposition state, in a reverse way, here we consider the required state as the starting point of evolution dynamics, and utilize laser fields to drive it into a single lower state step by step. Time ...

Science.gov (United States)

Increasing the Mg(2+) concentration results in a depression of succincoxidase-linked state 3

International Nuclear Information System (INIS)

2009 p. 200-201 Ukraine Glushkov, AV Odesa State Environmental

Science.gov (United States)

... main in this state only for 10-8 secs., after which they decay to the meta- stable state (fluorescent level) because of spontaneous radiation or other ...

International Nuclear Information System (INIS)

The unknow parities of five strong dipole states between 6 and 8 MeV in "8"8Sr are shown to be negative. (orig.).

Energy Technology Data Exchange (ETDEWEB)

This poster, submitted for the CU Energy Initiative/NREL Symposium on October 3, discusses the impacts of renewable fuel and electricity standards on state economies.

UK PubMed Central (United Kingdom)

Gastric acid hypersecretory states are a group of disorders characterized by basal hypersecretion of gastric acid and historically include a number of disorders associated with hypergastrinemia,...Full Text Available

CERN Document Server

Deep donor states of muonium in silicon and germanium (status report exp SC81)

CERN Document Server

The state vector evolution in the interaction of initial measured pure state with collective quantum system or the field with a very large number of degrees of freedom N is analysed in a nonperturbative QED formalism. As the example the measurement of the electron final state scattered on nucleus or neutrino is considered.In the nonperturbative field theory the complete manifold of the system states is nonseparable i.e. is described by tensor product of infinitely many independent Hilbert spaces. The interaction of this system with the measured state can result in the final states which belong to different Hilbert spaces which corresponds to different values of some classical observables,i.e. spontaneous symmetry breaking occurs. Interference terms (IT) between such states in the measurement of any Hermitian observable are infinitely small ...

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We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We ...

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We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant concentration which can be incorporated in the ...