Science.gov (United States)

A univibrator and a pulse height discriminator using tunnel diodes and backward diodes are described, along with their applications in pulse shaping and fast coincidence technique. The main advantages achieved are simplicity of design and speed. The characteristics of the two diodes are shown. (auth)

International Nuclear Information System (INIS)

A fluidic pump comprises a two-diode pump having a first displacement vessel, a third diode connected to receive output from the two-diode pump through a delivery line and discharge to an outlet, and a second displacement vessel connected to the delivery line. There is a feed tank at a greater height than the two-diode pump, and a drive unit for alternately pressurising and venting the first and second displacement vessels. The drive pressure required to operate the pump can be of the order of half that for a single stage 2-diode pump. (author).

Science.gov (United States)

light-emitting diode A light-emitting diode, or LED, is a semi-conductor light source that emits visible light or invisible infrared radiation. Semi-conductors ...

UK PubMed Central (United Kingdom)

The refractive error in 15 eyes with threshold retinopathy of prematurity treated with diode laser photocoagulation was compared with 25 eyes with the same disease severity treated by cryotherapy. Myopia...Full Text Available

International Nuclear Information System (INIS)

A vortex diode has been developed as a reverse flow limiter in the primary circuit of an advanced gas cooled reactor. In addition to the development work on a prototype diode to optimise performance and geometry, measurements were also made on an available experimental diode of similar size with pressure differences up to 4 MPa and temperatures up to 600 K using nitrogen, argon and carbon dioxide as the test fluids. Correlation of data from all tests was satisfactorily obtained using isentropic one-dimensional nozzle flow equations. (author).

International Nuclear Information System (INIS)

The authors have designed and constructed four types of electron-beam diodes for the new 4-MV RLA injector: a non-immersed foilless diode, a magnetically immersed foilless diode, a foil diode and an ion-focused foilless diode, They are tailored to fit the new injector cavity. The design goals were to produce high quality 10-kA to 20-kA electron beams with a #beta# perpendicular smaller than 0.2 and a beam radius of the order of 2 cm. These beams will be matched to the RLA IFR channel so #beta# perpendicular must be equal to or smaller than the square root of the ratio of the beam current versus Alfven current for f_e = 1. A reentrant anode geometry was selected for the injector cavity design, because it offers substantial savings on the required amount of feromagnetic cores. The inner radius of the outside shell, now only 30 cm, would have been twice as large (60 cm) if a coaxial ...

Science.gov (United States)

indications of the formation of palladium silicides. 2, 4. It has been reported .... At room temperature, palladium silicides formed in a relatively narrow interface ...

Science.gov (United States)

PMID:21953922

Energy Technology Data Exchange (ETDEWEB)

A tunable diode laser is used to obtain infrared spectra of carbon dioxide in biological materials. The spectral resolution is sufficient to readily distinguish differing isotopic species. The technique may prove useful in clinical tests.

Science.gov (United States)

... Accession Number : ADD801284. Title : A Computer Vision System for Inspection of Light Emitting Diodes. Descriptive Note : Conference paper,. ...

Science.gov (United States)

Near-ideal Schottky barrier contacts to n-type Al0.22Ga0.78N have been developed by a two-step surface treatment technique. Plasma etching of the AlxGa1-xN surface prior to Schottky metal deposition, combined with sequential chemical treatment of the etched surface, holds promise for developing high quality low-leakage Schottky contacts for low noise applications and for recessed gate high electron mobility transistors. In this work, the effect of postetch chemical treatment of the n-type Al0.22Ga0.78N surface on the performance of the Ni/Au based Schottky contact has been investigated. Three different types of chemical treatment: viz, reactive ion etching, reactive ion etching plus dipping in hot aqua regia, and reactive ion etching plus dipping in hot KOH, are studied. Detailed current-voltage studies of three different surface treated diodes and a comparison with as-deposited diodes reveal significant improvement in the ...

International Nuclear Information System (INIS)

Novel hybrid organic/inorganic nanocomposites made of metal oxide and conjugated polymer nanocomposite and its application in bulk-heterojunction solar cells were studied. The composite was composed of different concentrations of strontium titanate (SrTiO_3) and polyaniline doped phosphoric acid. The optimum concentration of strontium titanate was found to be 0.2 v/v. An inorganic-organic photovoltaic device with a structure of Ag/Pani-H_3PO_4-SrTiO_3/Al has been fabricated. The ideality factor value of the diode was found to be 1.8. This n value of the diode implies a deviation from ideal junction behaviour. The barrier height #phi#_b value for the diode was found to be 0.56 eV. The Ag/Pani-H_3PO_4-SrTiO_3/Al diode shows a photovoltaic behaviour with a maximum open-circuit voltage V_o_c of 2.49 V, and short-circuit current I_s_c of 5.6 mA under light illumination #lambda# = 460 nm. The conversion ...

International Nuclear Information System (INIS)

An effective method of enhancing charge injection and electroluminescence efficiency of polymer-based light emitting diode is introduced. Spin-coated films of poly (N-vinylcarbazole) blended with electron-transport material (Bu-PBD), laser dye (Coumarin6), and the typical supporting electrolyte (tetraethylammonium perchlorate; TEAP) were examined and it was found that the injection current and luminance of the light emitting diode doped with TEAP were enhanced dramatically after heat-treatment at 80 deg. C and appropriate biasing in an external electric field of 1.5x10"8 V/m at this temperature. The thermally stimulated current (TSC) was also measured to investigate the relaxation process of ionic space charges in the films. The relaxation times of ionic polarization were found to be related to the cation size of the electrolyte. And the relaxation time becomes long enough by the use of TEAP doping.

Energy Technology Data Exchange (ETDEWEB)

Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

Science.gov (United States)

and palladium silicides (Pd,Si) with a total. AES intensity ratio of Pd to Si of 35/65. Scanning Electron Microscopy. (SEM') of the Pd region shows that ...

Science.gov (United States)

... Science: London, 1987; p. 237; (b) Ratner, MA; Shriver, D. F. Chem. ... 11. Lofton, EP; Thackeray, JW; Wrighton, MS J. ... (1) Dr. Harold H. Singerman (1) ...

Science.gov (United States)

A detection theory is developed for point-contact metal-oxide-metal (MOM) systems. A system with heterogeneous oxide strongly bonded to the substrate is considered. It is shown that the form of the functional connection between the barrier heights and the ultimate compressive strength of the oxide has no substantial influence on the voltage-current characteristics of the system. Quantitative analysis indicates that a MOM system can behave as a tunnel diode and as a diode with a Schottky barrier. The model permits the determination of the optimum construction of long-life detectors based on MOM point-contacts.-

Energy Technology Data Exchange (ETDEWEB)

This paper describes the design of a high-voltage negative ion source based on a magnetically insulated diode and generating microsecond pulses. Plane an cylindrical cathodes have been tested. The spatial and angular distributions of negative ions in the beam have been measured. The content of negative ions with different masses in the beam are given. The ion current density measured by a Faraday cup was up to 1 A/cm{sup 2} for the radial beam and 30-40 A/cm{sup 2}.

Science.gov (United States)

Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.

Energy Technology Data Exchange (ETDEWEB)

The five thermal-hydraulic concepts chosen for conceptual study of advanced PWR systems have been studied as follows: (1) Critical Heat Flux in passive PWR Conditions: review of previous works (various of correlations, analysis of parametric trends) on CHF, assessment and improvement of CHF prediction models for round tubes, development of the prediction model on bundle CHF with considering the correction factor calculated from the tube data base, design and construction of the intermediate-pressure CHF experimental loop, extension of CHF data base by performing the experiments at low-flow, and low-quality conditions (2) Passive Cooling Concepts for Concrete Containment Systems: Selection of the external condenser by comparing and reviewing between passive cooling concepts for concrete containment system concepts, survey and review of previous studies (theoretical mechanism of condensation heat transfer and effect of non-condensable gases) on the condensation phenomena, design and ...

Science.gov (United States)

Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. The mechanism of diffusion and reaction ...

Energy Technology Data Exchange (ETDEWEB)

In order to improve the long term reliability of lead-salt diode lasers, ohmic contacts of multilayer, thin-film structures consisting of In plus Au, Pt, Ni, and Pd have been studied. Diode lasers of PbSnTe fabricated with a variety of contacts were tested during room-temperature storage and during accelerated aging tests. The results show that contact reliablility can be improved when multiple overlapping films are used. After 4500 h of baking at 60 /sup 0/C, lasers with In-Au-Pd-Au contacts on both sides showed the least resistance increase (10%). For lasers with In-Au-Pt-Au contacts, 1 h of baking at 60 /sup 0/C is equivalent to 2 d storage at room temperature. Extrapolating these results, a 70% increase in contact resistance is expected for this type of laser after 9000 d of storage at room temperture. Our data also suggests that a smaller increase in contact resistance can be expected for lasers fabricated with In-Au-Ni-Au and In-Au-Pd-Au ...

International Nuclear Information System (INIS)

The following work deals with the realization, characterization and modeling of GaInP / AlGaInP high power semiconductor laser diodes in the visible wavelength range. In addition to the exploration and optimization of efficiency, temperature stability and maximum output power of multi-mode lasers especially methods for longitudinal and lateral mode stabilization of high power laser diodes have been investigated. Although often the focus of optimization is on the threshold current density, in this work the performance of the laser diode for an operation point around 1 Watt under continous wave operation is regarded as the figure of merit. It turns out that low carrier densities are key for an efficient reduction of the heterobarrier leakage currents. In addition, large optical cavity structures with low internal losses enable high external quantum efficiencies even for long cavities. Finally high laser effiency as well as an ...

Energy Technology Data Exchange (ETDEWEB)

Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

Energy Technology Data Exchange (ETDEWEB)

Red laser diodes emitting at 636 nm and 645 nm are studied as a function of pressure up to 20 kbar and temperature from 300 K down to 80 K. The 636 nm samples reveal anomalous L-I-V dependence at low temperatures and at high pressures. The 645 nm samples do not show these anomalies and can be tuned by pressure and temperature down to 575 nm, i.e., in the 70 nm range with powers above 200 mW and low threshold currents. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

British Library Electronic Table of Contents (United Kingdom)

There are two difficulties encountered in modeling valveless micropumps using lumped-element methods. The pressure loss coefficient for fluidic diodes used in valveless pumps to rectify flow depends on the flow direction. A problem arises in choosing the proper loss correlation because the flow direction is not known a priori. Another problem is the quadratic form of the equation for the flow through the fluidic diodes, which brings about multiple solutions. The above problems become even more serious in multi-chamber cases. They are overcome in this study by suitably formulating the flow resistance. In addition, the flow inertia is accounted for in the unsteady model. The steady and unsteady models are evaluated by comparing with CFD simulations, which also serve to illustrate the flow fi...

International Nuclear Information System (INIS)

Engineering details of a high voltage driven corona-plasma ozone generator are described. The plasma diode of generator has coaxial cylindrical geometry with cathode located inside anode. Cathode is made of a large number of radial gas nozzles arranged on central tubular mast which admits oxygen gas. The sharp endings of the nozzles along with a set of corona rings create the high electric field at the cathode required for formation of dense corona plume responsible for O_3 evolution. A model of coronal plasma generation and ozone production is presented. The plasma formation is strongly dependent on the electric field and temperature in side diode where a high electron density in a low temperature negative corona is suited for high ozone yields. These are established by suitable regulation of A-K gap, voltage, oxygen pressure, and cathode-nozzle population.

Energy Technology Data Exchange (ETDEWEB)

The article is devoted to results of fine time structure of particle losses in Tevatron with use of fast beam loss monitors (BLM) based on PIN-diodes. An ultimate goal of the new BLMs is to distinguish losses of protons and antiprotons from neighbor bunches with 132 ns bunch spacing in the Tevatron collider upgrade. The devices studied fit well to the goal as they can recognize even seven times closer - 18.9 ns - spaced bunches` losses in the Tevatron fixed target operation regime. We have measured main characteristics of the BLM as well as studied the proton losses over 10 decades of time scale - from dozen of minutes to dozen of nanoseconds. Power spectral density of the losses is compared with spectra of the proton beam motion.

Energy Technology Data Exchange (ETDEWEB)

A comparative study of three methods for extracting solar cell parameters of the single-diode lumped-circuit model is presented, using experimental characteristics collected from two silicon cells over a range of illuminations and temperatures. The results show that the curve-fitting method can often give erroneous parameter values. The 5-point methods are found to be reliable and accurate in situations where the model is a good approximation of cell performance. The analytical 5-point method, however, has the added advantage of simplicity. It is also found that for the cell measured, the single diode model is valid at illuminations above one-half AM1 but gives non-physical parameter values at lower illumination.

International Nuclear Information System (INIS)

Recent progress with the (Al_xGa_1_-_x)_0_._5In_0_._5P alloy system has resulted in laser diodes which operate at room temperature at wavelengths below 640 nm. OMVPE is used to grow the multi-quantum-well devices in a graded-index separate-confinement configuration. Laser threshold currents as low as 75 mA have been achieved.

Energy Technology Data Exchange (ETDEWEB)

CdTe/SnTe heterojunctions, prepared by EDRI (evaporation-diffusion en regime isotherme) and CSVT (close spaced vapour transport) techniques, have a spectral response in a wide wavelength range (0.3 - 1.5 ..mu..m) which exhibits two distinct bands, corresponding to carrier generation in each material of the couple. Experimental results are interpreted in terms of a Schottky diode model. (orig.).

International Nuclear Information System (INIS)

A diode-laser fluorescence experiment was performed in order to study fine-structure transitions between 5"2P states of rubidium atoms colliding with ground-state potassium or caesium atoms. The Rb(5"2P_3_/_2) state was optically excited and the intensity ratio of sensitized to direct fluorescence was measured. (author).

International Nuclear Information System (INIS)

This thesis dealt with the metal-organic gas phase epitaxy with nitrogen as carrier gas. For this first by means of three-dimensional modelings of the epitaxy process the influence of the carrier gas on the processes was explained. The optimization of the growth parameter for the whole light-emitting-diode structure in double-hetero arrangement resulted that an a temperature of 770 C and a V/ III-ratio of 150 layers with a high crystal quality could be reached.

Science.gov (United States)

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is ...

Science.gov (United States)

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a GaInP active layer was found to depend on growth ...

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe how this concept ...

International Nuclear Information System (INIS)

4,4'-bis(N-carbazolyl)tolan (BCT) and 4,4'-bis[N-(3,6-di-t-butyl)carbazolyl]tolan (BCT-t-Bu) were synthesized as ?-expanded analogs of 4,4'-bis(N-carbazolyl)biphenyl. Their photophysical characteristics both in solution and films were thoroughly investigated. Interestingly, the phosphorescence spectrum of BCT was significantly medium-dependent, and the emission maximum was red-shifted by 131 nm from 489 nm in solution at 77 K to 620 nm in a deposited film at 5 K, suggesting the presence of strong intermolecular interactions in the film. BCT and BCT-t-Bu were found to be useful as host materials for fluorescence-based organic light emitting diodes (OLEDs). However, their low triplet energy levels in films negated their potential to act as hosts in phosphorescence-based OLEDs. - Research highlights: ? We synthesized N-carbazolyl-tolan derivatives (BCT) as ?-expanded analogues of CBP. ? We found that BCT derivatives are useful as host materials for fluorescence-based ...

International Nuclear Information System (INIS)

The design and analysis of a high brightness electron beam experiment under construction at Sandia National Laboratory is presented. The beam energy is 12 MeV, the current 35 endash 40 kA, the rms radius 0.5 mm, and the pulse duration FWHM 40 ns. The accelerator is SABRE [J. Corley, J. A. Alexander, P. J. Pankuch, C. E. Heath, D. L. Johnson, J. J. Ramirez, and G. J. Denison, in Proceedings of the Eighth International IEEE Pulsed Power Conference, San Diego, California, 1991 (IEEE, New York, 1991), p. 920], a pulsed inductive voltage adder, and the electron source is a magnetically immersed foilless diode. This experiment has as its goal to stretch the technology to the edge and produce the highest possible electron current in a submillimiter radius beam. copyright 1996 American Institute of Physics.

Science.gov (United States)

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor linearity of the ...

Energy Technology Data Exchange (ETDEWEB)

Relativistic electron beams are used for generating high power microwaves. These microwave sources require electron beam generators spanning significant ranges in voltage and impedance. The pulsed power technology used to generate these electron beams is presented. Electron beam generators that produce beams with pulse durations in the 10 ns to 100 ns regime consist of an energy storage section, pulse shaping section, and an electron beam diode. The energy storage section is either a Marx generator or capacitor bank-pulsed transformer. The pulse shaping is done with high-voltage transmission lines. The electron beam diode is usually a cold-cathode, space-charge-limited flow device. For longer pulses (approx.1 ..mu..s) the energy storage and pulse shaping can be combined. Lumped-element pulsed-forming networks (PFN) can be designed to produce the desired pulse shape. The Marx generator becomes one of the elements of the PFN. Alternatively, a low ...

Energy Technology Data Exchange (ETDEWEB)

At Himeji Institute of Technology, the high power microwaves with the peak power of 20 MW, frequency of 12 GHz and pulse duration of 14 ns have been produced with a virtual cathode oscillator (vircator). These high power microwaves offer new applications in various fields. One problem in laser-triggered lightning experiment is the strong attenuation of laser energy by rain, cloud and laser-produced plasma. Microwaves propagate in thundercloud with small loss, and also are able to irradiate much extensive region of targets. In this paper, the fundamental experiment on the air breakdown induced by high power, short pulse microwaves is reported. The experimental setup of the vircator diode for microwave generation is shown. The typical evolution of diode voltage, electron beam current and microwave emission from the top in the course of time is shown. The experimental setup for microwave-induced air breakdown and the experimental procedure are ...

International Nuclear Information System (INIS)

The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.

Energy Technology Data Exchange (ETDEWEB)

Classical semiconductor physics has been continuously improving electronic components such as diodes, light-emitting diodes, solar cells and transistors based on highly purified inorganic crystals over the past decades. Organic semiconductors, notably polymeric, are a comparatively young field of research, the first light-emitting diode based on conjugated polymers having been demonstrated in 1990. Polymeric semiconductors are of tremendous interest for high-volume, low-cost manufacturing (''printed electronics''). Due to their rather simple device structure mostly comprising only one or two functional layers, polymeric diodes are much more difficult to optimize compared to small-molecular organic devices. Usually, functions such as charge injection and transport are handled by the same material which thus needs to be highly optimized. The present work contributes to ...

CERN Document Server

The scattering and recombination processes between two triplet excitons in conjugated polymers are investigated by using a nonadiabatic evolution method, based on an extended Su-Schrieffer-Heeger model including interchain interactions. Due to the interchain coupling, the electron and/or hole in the two triplet excitons can exchange. The results show that the recombination induces the formation of singlet excitons, excited polarons and biexcitons. Moreover, we also find the yields of these products, which can contribute to the emission, increase with the interchain coupling strength, in good agreement with results from experiments.

Energy Technology Data Exchange (ETDEWEB)

Recently, organic semiconducting materials have gained a broad interest due to their potential for organic electronic devices such as organic light emitting diode (OLED), organic photovoltaic devices and organic field-effect transistors (OFETs). Optical properties of organic semiconducting materials are important for practical application. For example, the power conversion efficiency of organic photovoltaic devices is mainly affected by absorption properties of organic materials. Proton irradiation is one of the efficient methods to change the optical properties of organic materials. In this paper, we investigate the changes of optical properties of various polymers using the proton irradiation.

Energy Technology Data Exchange (ETDEWEB)

Methods and apparatus for detecting the presence of explosives by analyzing a vapor sample from the suspect vicinity utilize at least one microcantilever. Explosive gas molecules which have been adsorbed onto the microcantilever are subsequently heated to cause combustion. Heat, along with momentum transfer from combustion, causes bending and a transient resonance response of the microcantilever which may be detected by a laser diode which is focused on the microcantilever and a photodetector which detects deflection of the reflected laser beam caused by heat-induced deflection and resonance response of the microcantilever. 2 figs.

Science.gov (United States)

Self-magnetically insulated, high-voltage transmission lines are used in inertial confinement fusion particle accelerators in order to transmit power from the vacuum insulator to the diode. This paper describes a time-dependent 2-D code (MITL) for calculating (for planar or triplate geometries) the motion of test electrons through the tapered input or output convolutes of such lines. MITL results show that the electron canonical momentum in the direction of the flow changes as the electron passes through the convoluted geometry; it is suggested that these electrons lead to losses observed in long self-magnetically insulated lines.

Energy Technology Data Exchange (ETDEWEB)

The physics of microcavities have been a subject of intense study over the past 25 years. This work stimulated a large body of experimental and theoretical work on the optimization of the light extraction properties of light-emitting diodes. Not only has this led to the current high efficiency microcavity LEDs but also to the high brightness LEDs based on other approaches, which are presently available on the market. An overview of the state of the art of planar semiconductor microcavity LEDs will be presented. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Energy Technology Data Exchange (ETDEWEB)

An apparatus is provided for rapidly restarting the flow of coolant through the cold electromagnetic shield of a superconducting rotor following a thermal transient episode. A vortex diode inhibits coolant flow in the undesirable reverse direction and encourages the reestablishment of a normal thermosyphon cooling loop flow quickly following the termination of a thermal transient such as that caused by transmission line faults. The present invention requires no moving parts and may therefore be permanently sealed in the superconducting rotor without risk of costly repair efforts caused by components failure.

Science.gov (United States)

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

Energy Technology Data Exchange (ETDEWEB)

The differences are highlighted of various aspects of behaviour of the luminescence signal from feldspar when stimulated by green light and when stimulated by infrared radiation. In respect of bleaching, a comparison is made of the influence of white light (daylight) on the two stimulated luminescence signals, as well as a comparison of the influence of infrared exposure on the green-stimulated signal with the influence of green exposure on the infrared-stimulated signal. The influence of preheating on the two stimulated signals is also compared. Light-emitting diode systems were used for both green and infrared stimulation. The observations are considered in relation to the mechanism relevant to green- and infrared-stimulated luminescence from feldspar. (author).

Energy Technology Data Exchange (ETDEWEB)

Excitation transfer between the 3S[sub 1/2] states of the lithium isotopes [sup 6]Li and [sup 7]Li is measured in a thermionic diode. The 3S level is excited by off-resonant two-photon transitions with a single mode cw laser. The relative densities of the directly excited and collisionally populated levels are probed by further laser excitation to the 12P levels. An energy transfer cross section of 585 A[sup 2] [+-] 160 A[sup 2] is found at the experimental temperature of about 850 K. A simple semiclassical calculation yields a cross section of 450 A[sup 2]. (orig.)

British Library Electronic Table of Contents (United Kingdom)

An optical fiber methane sensing system utilizing a super-luminescent diode (SLD) in the 1.33-mm band and a fiber Fabry-Perot tunable filter (FFP-TF) is developed. A two-step reference measuring method, which is based on differential absorption technique, is employed; a reference channel is introduced to eliminate the fluctuation of the illuminant spectrum, and the reference wavelength acquired by tuning the FFP-TF is introduced to eliminate the environmental influence. The two-step reference measuring method has improved the reliability and stability of the system. A minimum detectable methane concentration of 0.3% has been experimentally achieved.

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. Homojunction GaAs solar ...

British Library Electronic Table of Contents (United Kingdom)

We fabricate a low noise erbium-doped fiber ring laser that can be continuously tuned over 102nm by insertion of the fiber Fabry-Perot tunable filter (FFP-TF) in the ring cavity with a novel cavity structure and the optimal gain medium length. As an application of this fiber ring laser, we performed the absorption spectroscopy of acetylene (13C2H2) and hydrogen cyanide (H13C14N) and measure the absorption spectra of more than 50 transition lines of these gases with an excellent signal to noise ratio (SNR). The pressure broadening coefficients of four acetylene transition lines are obtained using this fiber ring laser and an external cavity laser diode.

British Library Electronic Table of Contents (United Kingdom)

Various pyranocoumarins, calophyllolide, inophyllums B, C, G1, G2 and P, from Calophyllum inophyllum (Clusiaceae) leaves of French Polynesia (Austral, Marquesas, Society and Tuamotu archipelagos) have been determined in 136 leaf extracts using a high pressure liquid chromatography-UV-diode array detection (HPLC-UV-DAD) technique. Results show a wide range in chemical composition within trees growing on eighteen islands. The use of multivariate statistical analyses (PCA) shows geographical distribution of inophyllums and indicate those rich in HIV-1 active (+)-inophyllums. Inophyllum B and P contents (0.0-39.0 and 0.0-21.8mgkg-1, respectively) confirm the chemodiversity of this species within the large area of French Polynesia. The study suggests the presence of interesting chemotypes which...

International Nuclear Information System (INIS)

This article describes the laser Thomson scattering principle and the developed system on HL-2A device. The high power Q-switch Nd:YAG laser, with a wavelength of 1064 nm, can sufficiently satisfy the measurement requirement. The polycromator consisting of avalanche photo-diodes(APD) and narrow band interference filters, can effectively improve the measurement of scattering light. The electron temperature is deduced by error-weighted lookup table method, which improves the data- processing speed or efficiency. Finally, the experiment results of the one-point electron temperature during different discharges of plasma are presented. (authors)

International Nuclear Information System (INIS)

Point contact Josephson junctions can function as millimeter wave heterodyne mixers with conversion gain. The best results achieved thus far show a single sideband conversion gain of 1.3 and a mixer contribution to the system noise temperature of 54"0K. Both of these results are approximately 5 times better than the best published figures for cooled Schottky barrier diode mixers operated at the same frequency. The measured noise for a variety of junctions can be expressed as a universal function of the normalized rf frequency #OMEGA# = h#omega#/2eI/sub c/R. It is about a factor 2 larger than the calculated noise arising from the thermal noise in the junction shunt resistance, R. The noise calculation was done for the resistively shunted junction model using an analog junction simulator.

Energy Technology Data Exchange (ETDEWEB)

Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In{sub 0.5}(Al{sub {ital x}}Ga{sub 1{minus}{ital x}}){sub 0.5}P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.

Science.gov (United States)

The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.

Science.gov (United States)

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow rid structures were 300 A/cm{sup 2} and 330 A/cm{sup 2} for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87--89% and the internal losses of 7--10 cm{sup {minus}1} were obtained.

International Nuclear Information System (INIS)

Applying diode-laser resonant fluorescence method, the cross sections for the excitation energy transfer of the collisional process K"*(4"2P_1_/_2)+Cs(6"2S_1_/_2)#reversible#K"*(4"2P_3_/_2)+Cs(6"2S_1_/_2) have been measured. The values we have obtained are #sigma#(1/2#->#3/2)=77 A"2 and #sigma#(3/2#->#1/2)=48 A"2. These results complete the sequence of data for the fine-structure mixing of the first-resonance states of alkali atoms colliding with the ground-state caesium atoms. (orig.).

Energy Technology Data Exchange (ETDEWEB)

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

Energy Technology Data Exchange (ETDEWEB)

A static plasma grating has been demonstrated experimentally in a large optical cavity FIB-DBR GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam (FIB). The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimization of the laser design is developed and presented here. The computed results show that /kappa/ can be increased by more than an order of magnitude over the 15 cm/sup -1/ experimentally. Therefore, FIB-DBR (or -DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.

British Library Electronic Table of Contents (United Kingdom)

The homogeneity of a helium dielectric barrier discharge, working at atmospheric pressure and containing oxygen as contaminant, is assessed by mapping the spatial distribution of oxygen metastable atoms in relation to the uniformity of surface properties. Tunable diode laser absorption spectroscopy is used to monitor the time evolution of the absorption coefficient corresponding to the oxygen metastable atoms on the 35S2 level, as a function of the laser absorbing path, whereas bi-dimensional Abel transform is used to obtain local information on the space distribution of the metastable atoms in the discharge. The radial distribution of the surface properties is investigated using atomic force microscopy, contact angle measurement and X-ray photoelectron spectroscopy. The results show that ...

Energy Technology Data Exchange (ETDEWEB)

Researchers at the Laboratory of Nuclear Microanalysis in Besancon (France) are developing and improving radon measurements in order to detect and analyse, more precisely radon emanation anomalies in both fields of Earth Sciences and Radioprotection. In order to characterize radon emanation, two complementary techniques are developed; continuous measurement through a portable proportional counter and passive measurements by nuclear track detectors for both fieldwork and laboratory analysis. A mathematical model is being devised to interpret the nuclear track detector response. This model is performed according to the device characteristics: type of detectors, shape and size of cells and whether a membrane is used or not. In addition to the theoritical study, experimental radon concentration measurements will be reported. (author).

Science.gov (United States)

A Pulsed Radiation Dosimetry System designed to measure radiation produced by particle accelerators is described. The problems associated with total-dose measurement of irregular shaped pulses of ionizing radiation have been simplified. The system responds to extremely narrow pulses of charged particles or X-rays using a pin diode as the detector. Direct readout of dose in rads (Si) is displayed on a 3-1/2 digit digital panel meter. The system will operate in either the multiple-pulse or single-pulse mode. The multiple-pulse mode would be useful in monitoring or tuning a linear accelerator. In the single-pulse mode the system will automatically display total dose of a transient event in real time and hold that measurement indefinitely or until the next measurement is made. The system features an automatic reset in either mode.

Science.gov (United States)

We report the characteristics of visible vertical cavity surface emitting laser diodes. Wafers are grown such that the Fabry--Perot resonance wavelength changes with position from 690 to 620 nm, overlapping to varying degrees with the [ital n]=1 and [ital n]=2 quantum well gain peaks at [similar to]670 and 650 nm. Gain guided devices are tested across the entire wafer, and pulsed room temperature lasing is observed from 634.6 to 663.2 nm. Our results suggest that gain contributions from the second quantized state are required to overcome high cavity losses in order to achieve lasing.

International Nuclear Information System (INIS)

A high sensitivity, high bandwidth, two-color interferometer (1064 and 532 nm) has been tested on the Hawk pulsed power generator at the Naval Research Laboratory. The phase resolution is 10"-"5 waves with a rise time of 3 ns, a new capability for diagnosing plasmas, and neutrals in pulsed power experiments. The two-color feature is used to distinguish phase shifts from free (plasma) electrons and bound (neutral and ion) electrons. Simultaneous electron and neutral density measurements were demonstrated in a plasma opening switch (POS) experiment. The ability to measure small phase shifts with fast rise time were demonstrated in a plasma filled diode experiment. The high sensitivity and vibration isolation enable neutral gas distribution measurements from supersonic nozzles used in plasma radiation source experiments. Examples of these measurements and future applications are described. copyright 1997 American Institute of Physics.

Energy Technology Data Exchange (ETDEWEB)

Buried ridge stripe lasers have been grown on InP in two steps by gas source molecular beam epitaxy. The active structure consists of a compressively strained layer multi quantum well with an equivalent wavelength emission at 1.5 [mu]m. The stripe was defined by reactive ion etching. A threshold current of 22 mA was reproducibly obtained on a laser length of 500 [mu]m. A CW output power of 48 mW per facet was achieved. In addition, preliminary accelerated aging tests have shown the high reliability the structure. (orig.)

Energy Technology Data Exchange (ETDEWEB)

Temperature and concentration profiles of CO in a laminar, axisymmetric, premixed methane-air Bunsen flame are measured using line-of-sight diode laser absorption spectroscopy and computer tomographic (CT) reconstruction. Absorption spectra for P(20) (v=2<-1) and P(27) (v=1<-0) vibrotational transitions of CO were measured at 21 evenly spaced positions over a 1.33 cm span for a 1.3 cm radius flame. CT reconstruction algorithm was based on Fourier convolution. The tomographically reconstructed normalized transmission profiles derived from absorption spectra, in conjunction with a quantum mechanical model for vibrotational behavior of CO, yielded both temperature and concentration profiles. The Bunsen flame had 3 distinct zones: an inner rich-premixed flame zone, an outer non-premixed flame zone and an unburnt core region. The reconstructed temperature profile showed that the core region temperature was close to ambient and rapidly increased to adiabatic flame ...

Energy Technology Data Exchange (ETDEWEB)

The production and characterisation of thin films made from molybdenum sulphide, molybdenum selenide, tungsten sulphide and tungsten selenide are described. The electronic properties of the thin films were examined by Hall measurements and by thermal sensors. For the MoSe[sub 2] films, the majority of the samples were n-conducting and p-conduction was only found for a few examples. All the other films (MoS[sub 2], WS[sub 2], WSe[sub 2]) were p-conducting. The electrical transport properties of the thin films are comparable to those of single crystals. With these thin films as absorber materials, it was possible for the first time to produce the polycrystalline solid n-ZnO/p-MoSe[sub 2], n-ZnO/WSe[sub 2], n-ZnO/WS[sub 2]- and n-ITO/WS[sub 2] solar cells. In spite of not yet optimized diode geometry (lateral build-up), a maximum short circuit current of I[sub SC] = 18 mA/cm[sup 2] was achieved for the MoSe[sub 2] diode. (orig.)

Science.gov (United States)

High microwave power (1,000 W) electron cyclotron resonance CH{sub 4}/H{sub 2}/Ar discharges produce etch rates for In{sub 0.5}Ga{sub 0.5}P, Al{sub 0.5}In{sub 0.5}P{sub 0.5}, and Al{sub 0.5}Ga{sub 0.5}P of {approximately} 2,000 {angstrom}/min at moderate RF power levels (150 W) and low pressure (1.5 mTorr). This is approximately a factor of five faster than for conventional reactive ion etching conditions where much higher ion energies are necessary. The etched surfaces are smooth over a wide range of CH{sub 4}-to-H{sub 2} ratios and microwave powers. AlInP is more resistant to preferential loss of P from the near-surface during etching than is InGaP. While the etching is ion-driven, pure Ar discharges produce rough surfaces and the CH{sub 4}/H{sub 2} is necessary in the achievement of acceptable morphologies. The InGaAlP/GaAs heterostructure is being increasingly utilized in diode lasers, light emitting diodes, field-effect transistors, and ...

International Nuclear Information System (INIS)

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at #lambda##approx#380 nm in the n-ZnO/ZnO nanodots-SiO_2 composite/p- Al_0_._1_2Ga_0_._8_8N heterojunction light-emitting diode. A SiO_2 layer embedded with ZnO nanodots was prepared on the p-type Al_0_._1_2Ga_0_._8_8N using spin-on coating of SiO_2 nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO_2 composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO_2 matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO_2 composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated ...

International Nuclear Information System (INIS)

Ultraviolet (UV) upconversion (UC) luminescence in Yb3+/Er3+-codoped yttrium oxide (Y2O3) nanocrystals can be enhanced by orders of magnitude via tridoping further with Li+ ions under diode laser excitation of 970 nm. Sensitized three-photon UC radiations at 390 and 409 nm, corresponding to the 4G11/2?4I15/2 and 4H9/2?4I15/2 of Er3+ ions, respectively, present an enhancement time of about 33 times, which is larger than the 24 times enhancement for the UC green radiation. The UV UC radiation at 320 nm that corresponds to the 2P3/2?4I15/2 of Er3+ ions has also been greatly enhanced. Theoretical calculations interpret that all the observed enhancement times of UV UC radiations arise from the prolonged lifetimes of their intermediate states.

Energy Technology Data Exchange (ETDEWEB)

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article ...

Energy Technology Data Exchange (ETDEWEB)

Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In/sub 1-//sub y/(Al/sub x/Ga/sub 1-//sub x/)/sub y/P-In/sub 1-//sub y/ (Al/sub x/Ga/sub 1-//sub x/)/sub y/P quantum well heterostructures grown lattice matched (yapprox. =0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (J/sub th/approx.10/sup 4/ A/cm/sup 2/, 625 nm) of diodes fabricated from the same crystal is described.

International Nuclear Information System (INIS)

The high-energy radiation-induced degradation of an H-acid derivative azo dye, Apollofix-Red SF-28 (AR-28) was studied in aqueous solution by using pulse radiolysis with kinetic spectroscopic detection for transient measurements. Gamma radiolysis with UV-VIS spectroscopy and gradient ionpair HPLC separation with diode array detection were applied for following the destruction of AR-28 and measuring the products. The reactions of hydrated electron (e_a_q "-) and hydroxyl ("#centre dot#OH) radical were investigated separately. "#centre dot#OH reacts with the unsaturated bonds of the molecule. In the further reactions of the "#centre dot#OH adduct radicals, the AR-28 molecules partly reform with a slightly modified structure. The products formed in the first reaction of "#centre dot#OH and AR-28 molecules have also high reactivity towards the "#centre dot#OH radicals. For these reasons the efficiency of "#centre dot#OH radicals in discolouration of the solution is ...

Energy Technology Data Exchange (ETDEWEB)

The latest electronic circuit technology that can be used for the electric railway traction system fed by an AC/DC dual power line was developed. This system consists of reverse conducting GTO thyristors, microprocessors, and DSP`s. In the AC power supply line section, the line converter is controlled by PWM technology to secure a high power factor and reduce the higher harmonic generation of an input current as far as possible. The line converter and motor converter use reverse conducting GTO thyristors. Since these converters are cooled using a heat pipe cooler, they are reduced in size and weight. The electric grounding point of the main power circuit is set to the negative side of the DC line for AC and DC line sections. Therefore, the AC/DC selector switch was simplified in structure. Moreover, the DC input for the auxiliary power supply can be obtained from multiple line converters using diodes. As the result of the actual operational test, the expected ...

Science.gov (United States)

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found parameters of the Schottky barrier. Details ...

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method provides a new avenue ...

Energy Technology Data Exchange (ETDEWEB)

We used the recuperation effect (see also 'Recuperation of infrared stimulated luminescence of feldspars' in this issue) for investigating the connection between infrared- and greenlight-stimulated luminescence (IRSL and GLSL) of feldspars by performing a 'double-bleach recuperation' experiment. A diode system was used for infrared (IR) stimulation, and a filtered-light unit for greenlight (GL) stimulation. Powdered feldspar samples (2 mg each) of known chemical characterisation from a mineral collection were used. After beta-irradiation with 180 Gy and storage in the dark for several weeks feldspar aliquots were bleached down to a residual level of {approx}1% of the initial level, first with IR and subsequently with GL. For both stimulations, detection of the stimulated luminescence was carried out in the near ultraviolet region (around 260-360 nm, peaked at 340 nm). Other aliquots were bleached in reverse order (1st GL, 2nd ...

International Nuclear Information System (INIS)

The application of robotics for repair, refurbishing or dismantling of nuclear installations implies eventually severe radiation resistance requirements on embarked components and subsystems. This is particularly critical when optical sensing is considered. Optoelectronic components and optical fibers are indeed quite sensitive to radiation, and without special design are rapidly out-of-operation in such an environment. This paper reports the results of a series of #gamma# irradiation experiments on such devices, and identify their behavior under radiation. Test results show that carefully selected optical fibers can keep their radiation induced attenuation lower than 0.3 dB/m even up to a total dose of 10 MGy. Temperature annealing can even lower this attenuation down to 0.1 dB/m. On the other hand, commercially available light emitting diodes and photodiodes present attenuations figures up to 15 dB, even after a gamma irradiation as low as 250 kGy. However, ...

International Nuclear Information System (INIS)

In a positive polarity induction adder each of the induction cavities is a cathode, which emits electrons at a unique potential. These broad spectrum electrons strongly affect Magnetically Insulated Transmission Line (MITL) behavior. Electron flow decreases the cavity-to-MITL coupling efficiency, and reduces the power transport efficiency along the system. Also, the operating impedance of the MITL is lowered, reducing the diode impedance required for good coupling and good total system power efficiency. It is therefore imperative to understand the details of MITL electron flow. In previous work, measurement of MITL electron flow for a twenty-stage linear induction adder (Hermes III), operated in positive polarity, was compared with simulations. There was qualitative agreement, but some differences were noted. For example, measured electron flow in the first cavities was greater than in the simulations. The authors have extended the work on this subject with ...

Energy Technology Data Exchange (ETDEWEB)

We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2{prime}-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM{close_quote}s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM{close_quote}s on the Ag surface potential. {ital Ab} {ital initio} Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a ...

Energy Technology Data Exchange (ETDEWEB)

The five thermal-hydraulic concepts chosen for advanced PWR have been studied as follows: (1) Critical Heat Flux: Review of previous works, analysis of parametric trends, analysis of transient CHF characteristics, extension of the CHF date bank, survey and assessment of correlations, design of a intermediate-pressure CHF test loop have been performed. (2) Passive Cooling Concepts for Concrete Containment system: Review of condensation phenomena with noncondensable gases, selection of a promising concept (i.e., use of external condensers), design of test loop according to scaling laws have been accomplished. and computer programs based on the control-volume approach, and the conceptual design of test loop have been accomplished. (4) Fluidic Diode Concepts: Review of previous applications of the concept, analysis major parameters affecting the performance, development of a computational code, and conceptual investigation of the verification test loop have been ...

International Nuclear Information System (INIS)

Neutron semiconductor detectors for neutron counting and neutron radiography have an increasing importance. Simple silicon neutron detectors are combination of a planar diode with a layer of an appropriate neutron converter such as 6LiF. These devices have limited detection efficiency of not more than 5%. The detection efficiency can be increased by creating a 3D microstructure of dips, trenches or pores in the detector and filling it with a neutron converter. The first results related to the development of such devices are presented. Silicon detectors were fabricated with pyramidal dips on the surface covered with 6LiF and then irradiated by thermal neutrons. Pulse height spectra of the energy deposited in the sensitive volume were compared with simulations. The detection efficiency of these devices was about 6.3%. Samples with different column sizes were fabricated to study the electrical properties of 3D structures. Charge collection efficiencies in silicon ...

International Nuclear Information System (INIS)

In this paper, an improved soft switched two cell interleaved boost AC/DC converter with high power factor is proposed and investigated. A new auxiliary circuit is designed and added to two cell interleaved boost converter to reduce the switching losses. The proposed auxiliary circuit is implemented using only one auxiliary switch and a minimum number of passive components without an important increase in the cost and complexity of the converter. The main advantage of this auxiliary circuit is that it not only provides zero-voltage-transition (ZVT) for the main switches but also provides soft switching for the auxiliary switch and diodes. Though all semiconductor devices operate under soft switching, they do not have any additional voltage and current stresses. The proposed converter operates successfully in soft switching operation mode for a wide range of input voltage level and the load. In addition, it has advantages such as fewer structure complications, lower ...

Science.gov (United States)

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser projection displays, holographic memories, and plastic fiber communication.

Science.gov (United States)

Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the defect density in doped and compensated a-Si:H is determined by the ...

International Nuclear Information System (INIS)

This paper (paper I) presents the first part of results obtained with the PF-1000 facility for the first time at its upper energy limit (?1 MJ). Special attention is paid here to plasma ('pinch') dynamics, which was investigated in relation to its electro-technical and radiation (especially neutron) characteristics with the help of a number of diagnostics, both time-integrated and with nanosecond temporal resolution. In these methods we utilized a Rogowski coil for the routine electro-technical measurements, visual multi-frame and streak cameras, soft x-ray pin-hole multi-frame cameras, PIN-diode assembly and PM tubes with scintillators for soft and hard x-rays as well as for neutron investigations together with a set of activation counters. In particular, the temporal cross correlation of different phenomena taking place during the discharge was investigated. The pinch's longevity appears to be 10-15 times larger than the ideal magnetohydrodynamic growth time ...

Science.gov (United States)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub 0.5/P ...

International Nuclear Information System (INIS)

Optically stimulated luminescence (OSL) of synthetic stishovite was investigated for a future dating technique of meteor impact craters. Luminescence around 330 nm was measured on the #gamma#-ray irradiated stishovite under two stimulating light sources of infrared laser (830 nm) and blue light emitting diode set (470 nm). Thermoluminescence (TL) studies before and after the OSL measurements showed the intensities around 100-200 deg. C and 220-350 deg. C to increase and those around 350-450 deg. C to decrease. This indicates that a part of deep-trapped charges excited during the OSL measurements were retrapped by shallower traps. The infrared stimulated luminescence (IRSL) after the TL measurement up to 450 deg. C could not be detected, while the blue light stimulated luminescence (BLSL) after TL had about one-tenth of the intensity before TL. This indicates that a part of the charges in shallower traps were detrapped thermally and returned to the deeper traps ...

Energy Technology Data Exchange (ETDEWEB)

In this report an isolated PWM DC-AC SICAM with an active capacitive voltage clamp is presented. AC-DC power supply is implemented in its simplest form: diode rectifier followed by a medium-size charge-storage capacitors and possibly with an EMC filter on the mains entrance. Isolation from the AC mains is achieved using a high frequency (HF) transformer, whose voltages are not audio-modulated. The latter simplifies the design and is expected to have many advantages over the approach where the transformer voltages are modulated in regards to the audio signal reference. Input stage is built as a DC-AC inverter (push-pull, half-bridge or a full-bridge) and operated with 50% duty cycle, with all the challenges to avoid transformer saturation and obtain symmetrical operation. On the secondary side the output section is implemented as rectifier+inverter AC-AC stage, i.e. a true bidirectional bridge, which operation is aimed towards amplification of the audio signal. In ...

Science.gov (United States)

For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of increasing the flow rate of H/sub 2/ gas in ...

Science.gov (United States)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for ...

Science.gov (United States)

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for visible-wavelength optical modulator ...

Energy Technology Data Exchange (ETDEWEB)

A systematic study of structure-mechanical properties relation is reported for MoSi{sub 2}-SiC nanolayer composites. Alternating layers of MoSi{sub 2} and SiC were synthesized by DC magnetron and rf-diode sputtering, respectively. Cross-sectional transmission electron microscopy was used to examine three distinct reactions in the specimens when exposed to different annealing conditions: Crystallization and phase transformation of MoSi{sub 2}, crystallization of SiC, and spheroidization of the layer structures. Nanoindentation was employed to characterize the mechanical response as a function of structural changes. As-sputtered material exhibits amorphous structures in both types of layers and has a hardness of 11 GPa and a modulus of 217GPa. Subsequent heat treatment induces crystallization of MoSi{sub 2} to form the C40 structure at 500C and SiC to form the a structure at 700C. The crystallization process is directly responsible for hardness and modulus increase ...

Science.gov (United States)

The purpose of this study was to develop a simple motion measurement system with magnetic resonance (MR) compatibility and safety. The motion measurement system proposed here can measure 5-DoF motion signals without deteriorating the MR images, and it has no effect on the intense and homogeneous main magnetic field, the temporal-gradient magnetic field (which varies rapidly with time), the transceiver radio frequency (RF) coil, and the RF pulse during MR data acquisition. A three-axis accelerometer and a two-axis gyroscope were used to measure 5-DoF motion signals, and Velcro was used to attach a sensor module to a finger or wrist. To minimize the interference between the MR imaging system and the motion measurement system, nonmagnetic materials were used for all electric circuit components in an MR shield room. To remove the effect of RF pulse, an amplifier, modulation circuit, and power supply were located in a shielded case, which was made of copper and aluminum. The motion signal ...

Energy Technology Data Exchange (ETDEWEB)

In order to consider some procedures to prevent errors in radiotherapy based in learned lessons of accidental expositions and in accordance with information contained in international reports elaborated by International Atomic Energy Agency (IAEA) and of the data base availability by the European group Radiation Oncology Safety Information System (ROSIS) on the events, a research of the occurred errors was performed. For the evaluation of the incidents a data base based in the ROSIS and added plus a parameter was created 'type of error'. All the stored data make possible the evaluation of the 839 incidents in terms of frequency of the type of error, the process of detention, the number of reached patients and the degree of severity. Of the 50 types of found errors, the type of error more frequently was 'incorrect treatment coordinate', confirmed with the data of literature and representing 28,96 por cent of the total of the incidents. The results ...

Energy Technology Data Exchange (ETDEWEB)

This thesis deals with the evaluation of Solar Grade Silicon (SoG-Si) purified by different techniques, and also the fabrication and characterization of high efficiency and advanced bifacial solar cells. In the beginning of Chapter 1, various SoG-Si production methods relevant for this work are qualitatively described. The three feedstock materials used in this work are from the Fluidized Bed Reactor (FBR) process, metallurgical feedstock-I and feedstock-II process. In metallurgical feedstock-I, the lifetime of the minority charge carriers in multicrystalline silicon (mc-Si) samples at the grain boundaries are found to be higher than the grains themselves possibly due to lower resistivities in the grain boundaries. The efficiency of the best solar cell obtained using the mc-Si metallurgical feedstock-I is 16.1%. It has been identified that the fast light induced degradation, whose magnitude is lower than that of a reference cell suggests the formation of a B-metal complex in the SoG-Si ...