Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

Science.gov (United States)

... used in our aluminum process include a barrier to isolate aluminum from the gold-based ohmic contacts, thereby preventing "purple plague," and a ...

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting ...

Energy Technology Data Exchange (ETDEWEB)

A multi-spectral Schottky barrier infrared detector array in which individual pixels of radiation from a remote radiating object are detected by two or more Schottky barrier infrared radiation detectors each having a different spectral response so as to provide a ''color'' discrimination for the array.

International Nuclear Information System (INIS)

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

Science.gov (United States)

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the ...

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the ...

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

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A preliminary design effort directed toward a low concentration ratio photovoltaic array system based on 1984 technology and capable of delivering multi-hundred kilowatts (300 kW to 100 kW range) in low Earth orbit is described. The array system consists of two or more array modules each capable of delivering between 113 kW to 175 kW using silicon solar cells or gallium arsenide solar cells, respectively. The array module deployed area is 1320 square meters and consists of 4356 pyramidal concentrator elements. The module, when stowed in the Space Shuttle's payload bay, has a stowage volume of a cube with 3.24 meters on a side. The concentrator elements are sized for a geometric concentration ratio (GCR) of six with an aperture area of 0.5 meters x 0.5 meters. Drawings for the preliminary design configuration and for the test hardware that was fabricated for design evaluation and test are provided.

International Nuclear Information System (INIS)

Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that by N2 plasma.

Science.gov (United States)

Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. The mechanism of diffusion and reaction at the Pd/SiC ...

Science.gov (United States)

A detection theory is developed for point-contact metal-oxide-metal (MOM) systems. A system with heterogeneous oxide strongly bonded to the substrate is considered. It is shown that the form of the functional connection between the barrier heights and the ultimate compressive strength of the oxide has no substantial influence on the voltage-current characteristics of the system. Quantitative analysis indicates that a MOM system can behave as a tunnel diode and as a diode with a Schottky barrier. The model permits the determination of the optimum construction of long-life detectors based on MOM point-contacts.-

Energy Technology Data Exchange (ETDEWEB)

The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with {open_quotes}single carrier{close_quotes} response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix ...

Energy Technology Data Exchange (ETDEWEB)

Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

International Nuclear Information System (INIS)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd_2Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd_2Si caused a partial rejection of As for implanted doses of 2 x 10"1"5 cm"-"2 and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

Energy Technology Data Exchange (ETDEWEB)

Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

International Nuclear Information System (INIS)

Gallium imaging is increasingly being used for the early detection of complications in patients with AIDS. A 26-year-old homosexual man who was HIV antibody positive underwent gallium imaging for investigation of possible Pneumocystis carinii pneumonia. Widespread cutaneous focal uptake was seen, which was subsequently shown to be due to mycobacterium avium-intracellulare (MAI) septicemia. This case demonstrates the importance of whole body imaging rather than imaging target areas only, the utility of gallium imaging in aiding the early detection of clinically unsuspected disease, and shows a new pattern of gallium uptake in disseminated MAI infection.

Energy Technology Data Exchange (ETDEWEB)

The effect of molybdenum on the electronic structure of the passive films formed on ferritic (Fe-Cr and Fe-Cr-Mo) stainless steels is examined by capacitance and photoelectrochemical measurements. The capacitance study is supported by a mathematical analysis of the Schottky barrier developed at the semiconductor-electrolyte interface in the case of a semiconductor with multiple bulk electronic states in the bandgap. The numerical simulations, based on the more general Mott-Schottky relation proposed, are in good agreement with the experimental results. It can be concluded that the capacitance behavior of the passive films is related to the contributions of a shallow donor level very close to the conduction band and a deep donor level at about 0.4 eV below the conduction band. The addition of molybdenum decreases the donor density of the deep level. Photoeffects observed for subbandgap photon energies reveal that this deep donor level behaves ...

Energy Technology Data Exchange (ETDEWEB)

The leakage current behaviors of PLZT capacitors with top electrodes of Pt, Ir, and IrO{sub 2} are investigated before and after hydrogen forming gas anneal. The P-E hysteresis and fatigue properties of Pt/PLZT/Pt capacitors are almost recovered after recovery anneal in O{sub 2} ambient. The leakage current mechanisms of PLZT capacitors with Pt and IrO{sub 2} top electrodes are consistent with space-charge influenced injection model showing the strong time dependence irrespective of annealing conditions. On the other hand, the leakage current behavior of Ir/PLZT/Pt capacitor shows steady state independent of time because IrPb, conducting phase, formed at interface between Ir top and PLZT is a high conduction path. Teh leakage current mechanism of Ir/PLZT/Pt capacitor is consistent with Schottky barrier model. (author). 15 refs., 6 figs.

International Nuclear Information System (INIS)

... angiotensin gallium 67 lungs lysozyme patients sarcomas beta decay

International Nuclear Information System (INIS)

The composite wave variational version of the APW (augmented plane wave) method is used to obtain the electronic band structure of the compounds boron phosphide and boron arsenide at the high symmetry points #GAMMA#, X, and L. The tight binding interpolation scheme of Slater and Koster is used to calculate the rest of the band structure. The results show that both these materials are indirect band gap semiconductors. The density of states, and the imaginary part of the dielectric constant is also calculated. The theoretical results are compared with the reported experimental and theoretical data. (author).

Energy Technology Data Exchange (ETDEWEB)

Focus Ion Beam (FIB) milling has greatly extended the utility of atom probe and TEM because it enables sample preparation with a level of dimensional control never before possible. Using FIB it is possible to extract the samples from desired and very specific locations. The artifacts associated with this sample preparation method must also be fully understood. In this work issues specifically relevant to the FIB milling of aluminum alloys are presented. After using the FIB as a sample preparation technique it is evident that gallium will concentrate in three areas of the sample: on the surface, on grain boundaries and at interphase boundaries. This work also shows that low energy Ar ion nanomilling is potentially quite effective for removing gallium implantation layers and gallium from the internal surfaces of aluminum thin foils.

Energy Technology Data Exchange (ETDEWEB)

In the paper six cases of facial osteomyelitis as a complication of chronic sinusitis in hemophiliac-AIDS patients are reported. Osteomyelitis was suggested by an increasing of erythrocyte sedimentation rate. The diagnosis was confirmed by a positive {sup 99m} Tc MDP scintigraphy. The patients were submitted to clinical treatment. The erythrocyte sedimentation rate and 67-gallium citrate scans were used in the follow-up of the therapy. Three patients had negative gallium after three weeks of organism-specific antibiotic therapy; in two patients the gallium scintigraphy remained positive. One patient did not undergo the radionuclide scan for this clinical conditions. These results suggest that MDP scans showed higher sensitivity and specificity in detection of bone disease in chronic sinusitis. Gallium scans appeared to be valuable tool in the follow-up of the infection. There are no reports in the ...

Science.gov (United States)

Counting characteristics of X-ray detectors fabricated from indium-doped, gallium-doped, and chlorine-doped CdTe have been investigated. The detectors fabricated from indium-doped and gallium-doped crystals showed radiation-induced polarization, namely, a progressive decrease of count rate with an increase of photon fluence in the high-photon-fluence region, while the detectors fabricated from chlorine-doped crystals did not. Results from current-voltage characteristics of the detectors indicated that the different counting characteristics of these detectors originated from the difference in internal electric fields in each detector.

International Nuclear Information System (INIS)

The results of x-ray diffraction, dc magnetization, and 61Ni Moessbauer spectroscopy studies of the ternary arsenide CrNiAs are reported. This compound crystallizes in the orthorhombic Fe2P-type structure (space group P6-bar2m) with the lattice parameters a 6.1128(2) A and c = 3.6585(1) A. CrNiAs is a mean-field ferromagnet with Curie temperature TC = 171.9(1) K and the critical exponents ? 0.514(18), ? = 1.010(16), and ? = 2.922(10). The temperature dependence of the magnetic susceptibility above TC follows the modified Curie-Weiss law with a paramagnetic Curie temperature of 176.0(3) K and effective magnetic moment per transition metal atom of 2.42(1) ?B. The magnetic moment per formula unit at 4.2 K is found to be 1.114(33) ?B. The hyperfine magnetic field at 61Ni nuclei at 4.2 K of 41.5(1.0) kOe implies that the Ni atoms carry a magnetic moment of 0.15(3) ?B, and that the moment carried by the Cr atoms is 0.95(6) ?B. The Debye temperature of CrNiAs is 221(1) K.

International Nuclear Information System (INIS)

Pulmonary clearance of an aerosol of "9"9Tc"m DTPA was measured in 21 non-smoking AIDS and pneumocystosis patients. The results were compared with those of pulmonary scintiscanning with gallium. All the patients exhibited increased clearance, evidence of a considerable alteration in alveolar permeability. This increase was also observed in patients with normal chest X-rays and normal blood gases. The average clearance in these patients was 6 #+-# 2% min"-"1 as compared with a normal 1.1 #+-# 0.3% min"-"1. Conversely, only four out of eight patients with normal chest X-rays had abnormal gallium scans. Clearance returned to normal after recovery. Measurement of DTPA clearance appears to be a very sensitive indicator for the detection and follow-up of pneumocystosis. However, it is not very specific since it can be increased by tobacco poisoning, drug abuse and the presence of lymphocytic alveolitis. An examination with normal findings can ...

International Nuclear Information System (INIS)

The optical spectroscopy measurements of gadolinium gallium garnet (GGG) crystals doped with Yb show evidence of the presence of non-equivalent optical centers with very similar radiative decay rates. The energy level schemes of those centers have been determined on the basis of optical absorption, luminescence and Raman experiments. Crystal field fitting resulted in two sets of slightly different crystal field parameters for two non-equivalent Yb centers. Both sets of parameters describe perfectly the experimentally detected Y b3+ energy levels. Correlation between systematic trends in the experimental energy level schemes and crystal field parameters is discussed.

International Nuclear Information System (INIS)

The project is intended to yield information on the transfer factors describing the transfer of ingested radionuclides to breast milk for the following elements: antimony, cerium, chromium, cobalt, gallium, lanthanum, molybdenum, niobium, radium, ruthenium, silver, thorium, titanium, and uranium. Those yet unknown or poorly known transfer factors are required in order to be able to develop a reliable model for description and assessment of the transfer of the radionuclides and the possibly resulting hazardous doses to infants, and for subsequent formulation of recommendations for radiological protection of the population. (orig./CB)

International Nuclear Information System (INIS)

Qualitative technetium Tc 99m bone scintigraphy using phosphate compounds and gallium 67 scintigraphy were described as a helpful means in diagnosing necrotizing external otitis (NEO). They were, however, claimed to be nonspecific. Quantitative Tc 99m methylene diphosphonate bone scintigraphy and gallium 67 scintigraphy were performed in eight patients with NEO and in 20 patients with severe external otitis, in order to prove usefulness of scintigraphy in the diagnosis of NEO. Ratios of lesion to nonlesion for bone scintigraphy were 1.67 #+-# 0.16 in patients with NEO and 1.08 #+-# 0.09 in patients with severe external otitis, and for gallium 67 scintigraphy they were 1.35 #+-# 0.24 in NEO patients and 1.05 #+-# 0.03 in patients with severe external otitis. There was no difference in uptake between diabetic patients with severe external otitis and nondiabetic patients. The scintigraphic studies were also evaluated using a ...

Energy Technology Data Exchange (ETDEWEB)

The project is intended to yield information on the transfer factors describing the transfer of ingested radionuclides to breast milk for the following elements: antimony, cerium, chromium, cobalt, gallium, lanthanum, molybdenum, niobium, radium, ruthenium, silver, thorium, titanium, and uranium. Those yet unknown or poorly known transfer factors are required in order to be able to develop a reliable model for description and assessment of the transfer of the radionuclides and the possibly resulting hazardous doses to infants, and for subsequent formulation of recommendations for radiological protection of the population. (orig./CB) [German] Ziel des Projektes ist die Ermittlung von Transferfaktoren fuer den Uebergang von Radionukliden aus der Nahrung der Muetter in die Muttermilch fuer die Elemente Antimon, Cer, Chrom, Cobalt, Gallium, Lanthan, Molybdaen, Niob, Radium, Ruthenium, Silber, Thorium, Titan und Uran. Um die Exposition und damit die ...

International Nuclear Information System (INIS)

Gallium liquid-metal ion sources that have been introduced in the late 1970s have allowed the development of a new class of micro- and nanofabrication tools collectively denominated as focused ion beam (FIB) machines. To investigate the potential of a helium beam in such a FIB instrument the authors have tested a room-temperature electron beam ion trap coupled with a high resolution FIB machine. In this letter they present their first results in target imaging using a helium beam with a resolution that allows to account for a beam diameter in the submicrometer range.

International Nuclear Information System (INIS)

The description is presented of binary phase diagrams of titanium alloyed with the following elements: silver, aluminium, arsenic, gold, boron, barium, beryllium, bismuth, carbon, calcium, cadmium, cobalt, chromium, copper, iron, gallium, germanium, hydrogen, hafnium, indium, iridium, potassium, lithium, magnesium, manganese, molybdenum, nitrogen, sodium, niobium, nickel, oxygen, osmium, phosphorus, lead, palladium, platinum, plutonium, rhenium, lanthanium, cerium, preseodymium, neodymium, gadolinium, erbium, terbium, thulium, lutetium, rhodium, ruthenium, scandium, silicon, tin, strontium, tantalum, technetium, thorium, uranium, vanadium, tungsten, yttrium, ytterbium, zinc and zirconium.

International Nuclear Information System (INIS)

Al, Ga and In complexing with methylthymol blue (H_6R) purified by gel filtration is studied. in the case of metal excess complexes with the ratio of components M:H_6R=2:1 with #lambda#=587(Al), 590(Ga) and 593 nm(In) appear. In the case of reacting agent excess complexes with the ratio of component 1:1 with #lambda#_m_a_x=480-490 (Al) and 480 nm(Ga, In) appear. The mechanism of complexing reactions is studied. Molar extinction coefficients and stability constants are calculated.

Science.gov (United States)

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

Energy Technology Data Exchange (ETDEWEB)

In this updated second edition, the order of contents of the textbook has been reorganized. It has been divided into main parts: Basic Science and Clinical Nuclear Medicine. Basic Science, Part I, encompasses basic physics, radiation protection, interaction of radiation with matter and radiation detection, imaging, nuclear pharmacy, and radiation biology. Part II, Clinical Nuclear Medicine, covers the central nervous system, bone, gastroenterology (liver/spleen), cardiovascular system, pulmonary system, genitourinary system, thyroid and endocrine systems, gallium studies, radioassay, hematology, and therapy. The total number of pages of the current edition is increased to 250 from the 213 of the first edition but there are fewer questions because those in the basic science area have been carefully selected to 60 of the original 98 questions. Compared with the previous edition, there are two advantages in the current one: (1) the addition of explanatory answers; and ...

Science.gov (United States)

The relationship between processing, microstructure, and properties was studied for A-15 compounds in multifilamentary composites produced by solid-state diffusion and in thin-film samples produced by vapor deposition. Grain sizes of A-15 superconducting compounds were measured by transmission electron microscopy of multifilamentary composites reacted at various temperatures. Critical current densities at 4.2 K and fields up to 6 T were found to be similar for niobium-tin, vanadium-gallium, and vanadium-silicon of the same grain size. Study of the Cu-V-Si phase diagram led to the production of improved multifilamentary vanadium-silicon conductors. The effects of various alloying elements on A-15 layers produced by solid-state diffusion were studied. The most promising new observation was that tantalum can be incorporated into niobium-tin reaction layers, leading to an enhancement of critical currents at high fields. The critical temperature of vapor-deposited, ...

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This research project aimed to determine the factors for the transfer of the elements silver (Ag), cerium (Ce), cobalt (Co), chrome (Cr), gallium (Ga), lanthanum (La), molybdenum (Mo), niobium (Nb), radium (Ra), ruthenium (Ru), antimony (sb), thorium (Th), titanium (Ti) and uranium (U) from food into the mother's milk. This factors will be used as a basic to check and derive activity values for the contamination of food and for radiation protection at working places of suckling women. For this purpose 19 mothers collected samples daily (2-8 weeks), using the duplicate method, of all the food they consumed as well as of their milk. After microwave-assisted digestion the element contents were analysed by mass-spectroscopy with inductive coupled plasma (ICP-MS). The results of the mothers who participate for more than 5 weeks were used to make a time lapse between the intake and transfer of the elements in the mothers milk visible. (orig.) [German] Ziel ...

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Indium-111 is currently the radionuclide of choice for colonic transit study. However, it is expensive and not available in many hospitals. Technetium-99m has been proposed for colonic transit study but the short half-life has limited its use. Gallium-67 citrate is inexpensive and available in most countries. Most importantly, it has a suitable half-life for colonic transit study. Attempts have been made in some studies to use {sup 67}Ga citrate to label activated charcoal, but the results have not been good because of poor stability. In this study, we successfully labelled activated charcoal with {sup 67}Ga citrate by adding alcohol and 5% glucose solution. To evaluate the in vitro stability, the {sup 67}Ga-activated charcoal was incubated in a milieu mimicking the intestinal content, containing lipase, trypsin and glycochenodeoxycholate at different pH values (6.0, 7.0, 7.4 and 8.0) and for different durations (0 h, 24 h, 48 h, 72 h and 96 h). For the in vivo ...

International Nuclear Information System (INIS)

The oxygen vacancies distribution in the rigid lattice and the thermally activated motion of oxygen atoms are studied in La1-xSrxGa1-xMgxO3-x (x=0.00; 0.05; 0.10; 0.15 and 0.20) compounds. For that 71Ga, 25Mg and 17O NMR was performed from 100 K up to 670 K, and ion conductivity measurements were carried out up to 1273 K. The comparison of the electric field gradients at the Ga- and Mg-sites evidences that oxygen vacancies appear exclusively near gallium cations as a species trapped below room temperature in local clusters, GaO5/2-#square#-GaO5/2. These clusters decay at higher temperature into mobile constituents of the structural octahedra Ga(O5/6#square#1/6)6/2. At the same time, the nearest octahedral oxygen environment of magnesium cations persists at different doping levels. The case of two adjacent vacant anion sites is found highly unlikely within the studied doping range. The thermally activated oxygen motion starts to develop above room temperature as is ...

Energy Technology Data Exchange (ETDEWEB)

This article considers the fundamentals of what happens in asolid when it is impacted with a medium energy gallium ion. The study ofthe ion/sample interaction at the nanometer scale is applicable to mostfocused ion beam (FIB) based work even if the FIB/sample interaction isonly a step in the process, e.g., micromachining or microelectronicdevice processing. Whereas the objective in other articles in this issueis to use the FIB tool to characterize a material or to machine a deviceor transmission electron microscopy (TEM) sample, the goal of the FIB inthis article is to have the FIB/sample interaction itself become theproduct. To that end, the FIB/sample interaction is considered in threecategories according to geometry: below, at, and above the surface.First, the FIB ions can penetrate the top atom layer(s) and interactbelow the surface. Ion implantation and ion damage on flat surfaces havebeen comprehensively examined; however, FIB applications require thefurther ...

Energy Technology Data Exchange (ETDEWEB)

A burgeoning interest in technetium coordination chemistry has been spurred by its widespread use in nuclear medicine. Recent focus has been on the design and preparation of new technetium complexes, the lipophilicity, polarity, and overall charge of which can be readily altered by simple substitutions in the molecular framework of the ligand in order to optimize the biodistribution and target specific organs. Examples are cationic (Cardiolite) and neutral (Ceretec) technetium complexes, used as myocardial and brain imaging agents, respectively. The authors have been pursuing a continuing study of tris(3-hydroxy-4-pyridinonato)gallium and -indium complexes that are water soluble, are hydrolytically stable, and are of varying lipophilicity and neutral charge. Studies of in vivo in rabbits and mice have revealed that several of these cationic complexes may be useful as morphologic kidney imaging agents, with [{sup 99m}Tc(pap){sub 3}]{sup +} showing elevated levels in ...

International Nuclear Information System (INIS)

The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the Stranski-Krastanov for substrate ...

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An essential issue in gallium (Ga)-stabilized fcc-phase plutonium ({delta}-Pu) is the formation of helium (He) voids and bubbles emanating from the radiolytic decay of the Pu. The rate of formation of He voids and bubbles is related to the He-defect formation energies and their associated migration barriers. The size and shape distributions of the bubbles are coupled to these critical migration processes. The values of the defect formation energies, internal pressure, and migration barriers can be estimated from atomistic calculations. Complicating this picture is the destruction of He-filled voids and bubbles by subsequent radiolytic decay events. The present study concerns the construction of the necessary potential energy surfaces for the Pu-He and He-He interactions within the modified embedded atom method (MEAM). Once fully tested, the potentials will be used to estimate the He-defect formation energies and barriers to the migration of these defects for both ...