WorldWideScience
2

Formation of defects in epitaxial heterostructures and multicomponent solid solutions of semiconductor compounds  

International Nuclear Information System (INIS)

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

3

Visible semiconductor lasers with the AlGaInP materials system  

International Nuclear Information System (INIS)

The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.

1988-11-02

5

Heteroepitaxial Growth of NSMO on Silicon by Pulsed Laser Deposition  

Energy Technology Data Exchange (ETDEWEB)

The following is the optimized pulsed laser deposition (PLD) procedure by which we prepared the final samples that were sent to LLNL. These samples are epitaxial multilayer structures of Si/YSZ/CeO/NSMO, where the abbreviations are explained in the following table. In this heterostructure, YSZ serves as a buffer layer to prevent deleterious chemical reactions, and also serves to de-oxygenate the amorphous SiO{sub 2} layer to generate a crystalline template for epitaxy. CeO and BTO serve as template layers to minimize the effects of thermal and lattice mismatch strains, respectively. More details on the buffer and template layer scheme are included in the manuscript [Yong et al., 2008] attached to this report.

2008-06-25

6

Measurement of radiative, Auger, and nonradiative currents in 1. 3-. mu. m InGaAsP buried heterostructure lasers  

Energy Technology Data Exchange (ETDEWEB)

Frequency response measurements are used to determine the carrier lifetime of 1.3-..mu..m InGaAsP buried heterostructure lasers between 1 mA and threshold. The data confirm previous results on the radiative and Auger recombination coefficients and reveal the presence of a nonradiative current which dominates at low currents and contributes 4 mA at threshold.

1987-02-09

7

Strain dependence of Si-Ge interdiffusion in epitaxial Si/Si{sub 1-y}Ge{sub y}/Si heterostructures on relaxed Si{sub 1-x}Ge{sub x} substrates  

Science.gov (United States)

The strain dependence of Si-Ge interdiffusion in epitaxial Si/Si{sub 1-y}Ge{sub y}/Si heterostructures on relaxed Si{sub 1-x}Ge{sub x} substrates has been studied using secondary ion mass spectrometry, Raman spectroscopy, and simulations. At 800 and 880 deg. C, significantly enhanced Si-Ge interdiffusion is observed in Si/Si{sub 1-y}Ge{sub y}/Si heterostructures (y=0.56, 0.45, and 0.3) with Si{sub 1-y}Ge{sub y} layers under compressive strain of -1%, compared to those under no strain. In contrast, tensile strain of 1% in Si{sub 0.70}Ge{sub 0.30} layer has no observable effect on interdiffusion in Si/Si{sub 0.70}Ge{sub 0.30}/Si heterostructures. These results are relevant to the device and process design of high mobility dual channel and heterostructure-on-insulator metal oxide semiconductor field effect transistors.

2006-01-02

8

MOCVD-grown Al /SUB 0. 5/ In /SUB 0. 5/ P-Ga /SUB 0. 5/ In /SUB 0. 5/ P double heterostructure lasers optically pumped at 90 K  

Energy Technology Data Exchange (ETDEWEB)

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

1982-12-01

9

Lateral optical confinement of the heterostructure semiconductor Raman laser  

Science.gov (United States)

This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 ..mu..m and Al/sub 0.1/Ga/sub 0.9/P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.

1987-11-02

10

High-optical-quality GaInP and GaInP/AlInP double heterostructure lasers grown on GaAs substrates by gas-source molecular-beam epitaxy  

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

1989-11-01

11

Continuous wave operation (77 K) of yellow (583. 6 nm) emitting AlGaInP double heterostructure laser diodes  

Science.gov (United States)

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

1986-03-03

12

High power (1,4W) AlGaInP graded-index separate confinement heterostructure visible (. lambda. -658 nm)laser  

Science.gov (United States)

A high power AlGaInP single quantum well graded index separate confinement heterostructure. It comprises a substrate and a multiplicity of layers deposited thereon comprising a single Ga{sub x}In{sub x}P quantum well where x has a value from about 0.4 to about 0.6; multiple graded index regions on both sides of the quantum well and cladding layers adjacent to each graded region of the well, the graded region comprising Al{sub y}(Ga{sub 1{minus}y}){sub 0.5}In{sub 0.5}P quaternary alloy; wherein the value of y in the graded region varies from about 0.2 at the quantum well/graded region interface to up to about 0.6 for the cladding layers/graded index regions; the heterostructure having a low broad area threshold current with pulsed thresholds in the range from about 1 to about 2 Amps/cm{sup 2} and a differential efficiency of from about 20 to about 60 percent.

1991-03-26

13

626. 2-nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition  

Energy Technology Data Exchange (ETDEWEB)

Room-temperature pulsed laser operation of (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P /(Al/sub 0.17/Ga/sub 0.83/)/sub 0.5/In/sub 0.5/P / (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved. The lasing wavelength is 626.2 nm, which is the shortest ever reported for an AlGaInP double heterostructure laser. Threshold current density is 50 kA/cm/sup 2/ for a diode with a 20-..mu..m-wide and 200-..mu..m-long stripe.

1985-01-01

14

cw operation of an AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition  

Science.gov (United States)

Continuous wave operation of an Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P /Ga/sub 0.52/In/sub 0.48/P /Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 ..mu..m and the threshold current was 55 mA for a diode with a nitride-insulated, 8-..mu..m-wide and 250-..mu..m-long stripe geometry.

1984-09-15

15

Optoelectronic devices grown by metallo-organic chemical vapor deposition  

International Nuclear Information System (INIS)

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

16

Buried-heterostructure semiconductor Raman laser with threshold pump power less than 1 W  

Energy Technology Data Exchange (ETDEWEB)

The low-power operation of a semiconductor buried-heterostructure Raman laser is reported. We are developing these devices for very wide-band optical communication in the terahertz frequency region. It has a structure with a GaP active layer and Al{sub {ital x}}Ga{sub 1{minus}{ital x}}P cladding layers, which are grown by the temperature-difference method under controlled vapor pressure. By making the stripe width 30--40 {mu}m, we have obtained a threshold pump power of 500 mW. A low-threshold semiconductor Raman laser can be pumped by semiconductor injection lasers. We have measured the optical loss of the waveguide and detected the contribution from scattering and leakage at heterointerfaces.

1989-12-01

17
18

BIOINORGANIC CHEMISTRY  

Science.gov (United States)

No abstract prepared.

2002-01-01

19

Studies of optical properties and applications of some mixed ternary semiconductors  

International Nuclear Information System (INIS)

Refractive indices of some mixed compound semiconductors below the bandgap are presented on the basis of some fundamental parameters and the effect of lattice mismatch on the refractive index step is also studied. The results help to design a variety of opto-electronic devices for the use in optical fiber communication and heterostructure lasers. The calculated values agree well with available experimental values thus justifying the approach. (author).

20

Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P and its heterostructures  

International Nuclear Information System (INIS)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub 0.5/P ...

21

Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0. 5/In/sub 0. 5/P and its heterostructures  

Science.gov (United States)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub 0.5/P ...

1988-09-01

22

Preparing the works for the St-Genis roundabout.  

CERN Document Server

Preparing the works for the St-Genis roundabout.

1999-01-01

23

Waste to energy technologies.  

Science.gov (United States)

No abstract prepared.

2010-04-01

25
30

Yellow-emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition  

Energy Technology Data Exchange (ETDEWEB)

Yellow-emitting pulsed laser operation of an Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P/Al/sub 0.16/Ga/sub 0.36/In/sub 0.48/P/ Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm/sup 2/ for a diode with a Si/sub 3/N/sub 4/ insulated 8-..mu..m-wide and 250-..mu..m-long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.

1984-11-01

31

Short-wavelength (approx. 625 nm) room-temperature continuous laser operation of In/sub 0. 5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0. 5/P quantum well heterostructures  

Energy Technology Data Exchange (ETDEWEB)

Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In/sub 1-//sub y/(Al/sub x/Ga/sub 1-//sub x/)/sub y/P-In/sub 1-//sub y/ (Al/sub x/Ga/sub 1-//sub x/)/sub y/P quantum well heterostructures grown lattice matched (yapprox. =0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (J/sub th/approx.10/sup 4/ A/cm/sup 2/, 625 nm) of diodes fabricated from the same crystal is described.

1988-04-18

32

Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition  

Energy Technology Data Exchange (ETDEWEB)

Continuous-wave (cw) operation at temperatures up to 23 /sup 0/C of an Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P/Ga/sub 0.52/In/sub 0.48/P/ Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 /sup 0/C for a device with a 10-..mu..m-wide and 250-..mu..m-long ion-implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 /sup 0/C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (approx.0.3 ..mu..m) p-AlGaInP layer and a p-Al/sub 0.76/Ga/sub 0.24/As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.

1985-11-15

33

Hybrid porous phosphate heterostructures as adsorbents of Hg(II) and Ni(II) from industrial sewage  

British Library Electronic Table of Contents (United Kingdom)

Porous phosphate heterostructures (PPH), functionalized with different ratios of aminopropyl and mercaptopropyl groups, labelled as Nx=5,25,50-PPH and Sx=5,25,50-PPH, respectively, were tested as adsorbents for Ni(II) and Hg(II) found in industrial sewage from electroplating processes and button battery recycling. X-ray diffraction was used to study the structures. The specific surface area of the pristine material (PPH) was 620m^2g^-^1, whereas the specific surface areas of the modified mercaptopropyl (S5-PPH) and aminopropyl (N5-PPH) were 472 and 223m^2g^-^1, respectively. The adsorption data were fitted to a Langmuir isotherm model. The S5-PPH material was saturated by 120mmol Hg(II) per 100g of material, whereas for Ni(II) adsorption, N25-PPH material displayed the highest adsorption w...

2011-01-01

34

AlGaInP single quantum well laser diodes  

Energy Technology Data Exchange (ETDEWEB)

The properties and low pressure organometallic vapor phase epitaxy of Ga{sub x}In{sub 1{minus}x}P/(AlGa){sub 0.5}In{sub 0.5}P quantum well (QW) laser diode heterostructures with Al{sub 0.5}In{sub 0.5}P cladding layers, and having wavelength 614 < {lambda} < 690 nm, are described. At longer wavelengths ({lambda} > 660 nm), threshold current densities under 200 A/cm{sup 2} and efficiencies greater than 75% result from a biaxially-compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.

1994-12-31

35

Al/sub 0. 3/Ga/sub 0. 7/P/sub 0. 01/As/sub 0. 99/ GaAs laser heterostructures grown by molecular beam epitaxy  

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

1982-09-01

36

Radiation effect on optical, electrophysical and surface properties of GaAlAs heterostructures  

Energy Technology Data Exchange (ETDEWEB)

A study was made on the effect of 3.5 MeV electron irradiation on the properties of light-emissive structure based on GaAlAs. It is shown that a considerable decrease in the emitted light intensity as a result of electron irradiation not accompanied by changes in recombination- and electric properties of the mentioned structures. It is established by the electron-microscopy and Auger-spectroscopy meazurements that electron irradiation causes the occurrence of regions of free aluminium clusters on the external surface of the structure n-layer. The number and the sizes of the regions depend on the electron doze. It was assumed that the mentioned regions can play a role of attenuation filter for the light emitted by the structure.

1984-07-01

37

High-power continuous wave 690 nm AlGaInP laser-diode arrays  

Energy Technology Data Exchange (ETDEWEB)

High-power diode laser arrays emitting at 690 nm have been developed for solid-state laser pumping. The laser diode bars (fill factor [approx]0.7) have been fabricated from single quantum well AlGaInP-based heterostructures. Using silicon microchannel heatsinks, a record high 360 W/cm[sup 2] per emitting aperture is achieved under continuous wave operation.

1995-03-06

38

High-power CW operation of AlGaInP laser-diode array at 640 nm  

Science.gov (United States)

Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.

1995-02-01

39

High-power (1. 4 W) AlGaInP graded-index separate confinement heterostructure visible (lambdaapprox. 658 nm) laser  

Science.gov (United States)

Pulsed operation of an AlGaInP graded-index separate confinement heterostructure laser grown by organometallic vapor phase epitaxy is reported. The laser active region consists of a single 100 A Ga/sub 0.5/In/sub 0.5/P quantum well and 1600 A graded index regions on both sides of the well. The graded index regions were produced by lattice-matched graded composition (Al/sub y/Ga/sub 1-//sub y/)/sub 0.5/In/sub 0.5/P quaternary alloys. This structure reduces the broad-area threshold current compared to a double heterostructure laser, with pulsed thresholds as low as 1050 A/cm/sup 2/. Total pulsed power of 1.4 W at 658 nm is available from an 80 ..mu..m x 300 ..mu..m mesa-stripe laser. A differential quantum efficiency of approx.56% is measured. By examining the cavity length dependence of the threshold current density and quantum efficiency, it is apparent that the quantum well gain has not saturated in these structures. This suggests that devices ...

1987-11-23

40

AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy  

Science.gov (United States)

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a GaInP active layer was found to depend on growth conditions and dopant ...

1987-06-01

88

Superconducting Properties of Epitaxial Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA) Thin Films and Yttrium BARIUM(2) COPPER(3) OXYGEN(7-DELTA)/PRASEODYMIUM BARIUM(2) COPPER(3) OXYGEN(7-Z)/YTTRIUM BARIUM(2) COPPER(3) OXYGEN(7 - Heterostructures Grown by Pulsed Laser Deposition  

Science.gov (United States)

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a technique known as pulsed laser deposition, and ...

1992-01-01

89

Temperature dependence of threshold current of injection lasers for short pulse excitation  

Energy Technology Data Exchange (ETDEWEB)

We report measurements of the temperature dependence of the threshold current of GaAs, 1.3-..mu..m InGaAsP, and 1.5-..mu..m InGaAsP double heterostructure lasers using short electrical pulses. T/sub 0/approx.200 K is observed for all the lasers. These high T/sub 0/ values show that the carrier density at threshold does not increase rapidly with increasing temperature in any of the lasers studied and thus the observed low cw T/sub 0/ of InGaAsP lasers is primarily due to a decrease of the carrier lifetime at threshold with increasing temperature.

1984-05-15

90

Hydrogenation-defined stripe-geometry In sub 0. 5 (Al sub x Ga sub 1 minus x ) sub 0. 5 P quantum-well lasers  

Energy Technology Data Exchange (ETDEWEB)

Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In{sub 0.5}(Al{sub {ital x}}Ga{sub 1{minus}{ital x}}){sub 0.5}P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.

1990-12-01

91

Hydrogenation-defined stripe-geometry In sub 0. 5 (Al sub x Ga sub 1 minus x ) sub 0. 5 P quantum-well lasers  

Science.gov (United States)

Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In{sub 0.5}(Al{sub {ital x}}Ga{sub 1{minus}{ital x}}){sub 0.5}P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.

1990-12-01

92

Ge/Si nanowire mesoscopic Josephson junctions  

CERN Document Server

The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced superconductivity in undoped Ge/Si core/shell NW heterostructures contacted by superconducting leads. By using a top gate electrode to modulate the carrier density in the NW, the critical supercurrent can be tuned from zero to greater than 100 nA. Furthermore, discrete sub-bands form in the NW due to confinement in the radial direction, which results in stepwise increases in the critical current as a function of gate voltage. Transport measurements on these superconductor-NW-superconductor devices reveal high-order (n = 25) resonant multiple Andreev reflections, indicating that the NW channel is smooth and the charge transport is highly coherent. The ability to create and control coherent superconducting ordered states in ...

2006-01-01

93

Diode laser overtone spectroscopy of CO_2 at 780nm  

International Nuclear Information System (INIS)

Overtone absorption lines of "1"2C"1"6O_2 have been examined by using a tunable diode laser (TDL) spectrometer in the region around 12770cm"-"1. The spectrometer sources are commercially available double heterostructure InGaAlAs TDLs operating in the 'free-running' mode, which allowed the detection of the line positions within 0.01cm"-"1. The observed carbon dioxide absorption lines belong to the #nu#_1+5#nu#_3 ro-vibrational band with rotational quantum number J up to 48. The minimum absorbance detected by the spectrometer (#approx#5x10"-"6) permitted to observe the weakest lines having the absorption cross section of the order of #approx#1x10"-"2"7cm"2/molecule.

2005-12-01

94

Designed defects in 2D antidot lattices for quantum information processing  

DEFF Research Database (Denmark)

We propose a new physical implementation of spin qubits for quantum information processing, namely defect states in antidot lattices defined in the two-dimensional electron gas (2DEG) at a semiconductor heterostructure. Calculations of the band structure of a periodic antidot lattice are presented. A point defect is created by removing a single antidot, and calculations show that localized states form within the defect, with an energy structure which is robust against thermal dephasing. The exchange coupling between two electrons residing in two tunnel-coupled defect states is calculated numerically. We find results reminiscent of double quantum dot structures, indicating that the suggested structure is a feasible physical implementation of spin qubits.

2008-01-01

95

AlxGa1-xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures  

British Library Electronic Table of Contents (United Kingdom)

We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1-xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift.

2009-01-01

96

Advances in the development of an AlGaAs/GaAs cascade solar cell using a patterned germanium tunnel interconnect  

Energy Technology Data Exchange (ETDEWEB)

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

1991-05-01

97

680-nm band GaInP/AlGaInP tapered stripe laser  

Energy Technology Data Exchange (ETDEWEB)

A gain-guiding tapered stripe laser was fabricated using a Ga/sub 0.5/In/sub 0.5/P/(Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 /sup 0/C, an aspect ratio of about 2, and an astigmatism near 25 ..mu..m. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 /sup 0/C with a constant output power of 3 mW.

1987-11-16

100

PLZT Ceramics Prepared from Conventional and Microwave Hydrothermal Powders  

CERN Document Server

PLZT Ceramics Prepared from Conventional and Microwave Hydrothermal Powders

1999-01-01

102

Influence of phosphorus vapor ambient for InGaAsP growth on GaAs substrate  

Science.gov (United States)

For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of increasing the flow rate of H/sub 2/ gas in ...

1986-12-01

103

InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy  

Science.gov (United States)

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. ...

1987-03-01

104

A Novel Domperidone Hydrogel: Preparation, Characterization, Pharmacokinetic, and Pharmacodynamic Properties  

UK PubMed Central (United Kingdom)

The purpose of the present study was to prepare a novel domperidone hydrogel. The domperidone dispersion was prepared by the solvent evaporation method. The characteristics of domperidone dispersion...Full Text Available

2011-01-01

132
200

Biological Surface-Active Substance  

International Science & Technology Center (ISTC)

Development of biological preparation with surfactant activity

214
215

Abrasion problems in coal preparation  

Energy Technology Data Exchange (ETDEWEB)

Lining of fused cast basalt tiles is recommended for various pieces of equipment constituting a coal preparation plant.

1981-01-01

216

Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition  

Energy Technology Data Exchange (ETDEWEB)

Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

1986-01-20

217

Nanoheterostructure Cation Exchange: Anionic Framework Conservation  

Energy Technology Data Exchange (ETDEWEB)

In ionic nanocrystals the cationic sub-lattice can be replaced with a different metal ion via a fast, simple, and reversible place-exchange, allowing post-synthetic modification of the composition of the nanocrystal, while preserving its size and shape. Here, we demonstrate for the first time that during such an exchange, the anionic framework of the crystal is preserved. When applied to nanoheterostructures, this phenomenon ensures that compositional interfaces within the heterostructure are conserved throughout the transformation. For instance, a morphology composed of a CdSe nanocrystal embedded in a CdS rod (CdSe/CdS) was exchanged to a PbSe/PbS nanorod via a Cu2Se/Cu2S structure. During every exchange cycle, the seed size and position within the nanorod were preserved, as evident by excitonic features, Z-contrast imaging, and elemental line-scans. Anionic framework conservation extends the domain of cation exchange to the design of more complex and unique ...

2010-05-11

218

InAlGaP vertical cavity surface emitting lasers (VCSELs): Processing and performance  

Energy Technology Data Exchange (ETDEWEB)

(Al{sub y}Ga{sub 1{minus}y}){sup 1{minus}x}In{sub x}P semiconductor alloys lattice-matched to GaAs are widely used in visible optoelectronic devices. One of the most recent developments in this area is the AlGaInP-based red vertical cavity surface emitting laser (VCSEL). These lasers, which employ AlGaInP active regions and AlGaAs distributed Bragg reflectors (DBRs), have demonstrated continuous-wave (CW) lasing over the 630--690 nm region of the spectrum. Applications for these lasers include plastic fiber data communications, laser printing and bar code scanning. In this paper, the authors present an overview of recent developments in the processing and performance of AlGaInP based VCSELs. This overview will include a review of the general heterostructure designs that have been employed, as well as the performance of lasers fabricated by both ion implantation and selective oxidation.

1997-06-01

219

High tunability of pulsed laser deposited Ba0.7Sr0.3TiO3 thin films on perovskite oxide electrode  

British Library Electronic Table of Contents (United Kingdom)

Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heteros...

2011-01-01

220

Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping  

Energy Technology Data Exchange (ETDEWEB)

The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.

2000-07-01

221

Band parameters for III - V compound semiconductors and their alloys  

International Nuclear Information System (INIS)

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. [copyright] 2001 American Institute of ...

2001-06-01

222

FFTF operations procedures preparation guide. Revision 2  

Science.gov (United States)

The Guide is intended to provide guidelines for the initial preparation of FFTF Operating Procedures. The Procedures Preparation Guide was developed from the plan presented and approved in the FFTF Reactor Plant Procedures Plan, PC-1, Revision 3.

1976-12-01

223

United ttsCos ur  

Science.gov (United States)

... floppy diskette message preparation - JANAP 128 and DD173 message preparation ... S including JANAP 128, DD173, and ACP 126. ...

2011-05-05

224

The International Reference Preparation of Erythropoietin*  

UK PubMed Central (United Kingdom)

The WHO Expert Committee on Biological Standardization authorized the National Institute for Medical Research to establish an International Reference Preparation of Erythropoietin on the basis of the...Full Text Available

1966-01-01

225

SOLID STATE RESEARCH OF THE APPLIED PHYSICS ...  

Science.gov (United States)

... 10 TIN TELLURIDE Preparation of Tin Telluride Single Crystals ..... 12 ... TIN TELLURIDE Preparation of Tin Telluride Single Crystals ...

1962-07-16

226

Preparation of covalently modified organic-inorganic composite nanoparticles and their interfacial electron transfer researches  

CERN Document Server

Preparation of covalently modified organic-inorganic composite nanoparticles and their interfacial electron transfer researches

1998-01-01

227

Method for preparing thermally cleavable surfactants without deprotonation  

Energy Technology Data Exchange (ETDEWEB)

The present invention describes surfactants of formula (I), ##STR00001## wherein R, R.sub.N, and m are defined herein, processes for their preparation, and methods for their decomposition.

2008-05-27

228

Grit-Blast/Silane (GBS) Aluminum Surface Preparation for ...  

Science.gov (United States)

... GRIT-BLAST/SILANE (GBS) ... GRIT-BLAST/SILANE (GBS) ALUMINUM SURFACE PREPARATION FOR STRUCTURAL ADHESIVE BONDING 5b. ...

2003-04-30

229

Exploration of Cold Extrusion for the Preparation of Enteric Minitablets of Isoniazid  

UK PubMed Central (United Kingdom)

The objective of the present work was to formulate the enteric minitablets of isoniazid by cold extrusion method. The minitablets were prepared using isoniazid, hydroxylpropylmethylcellulose phthalate...Full Text Available

2008-05-01

230

Defense.gov News Article: Task Force Prepares for Horn of ...  

Science.gov (United States)

... After the task force deploys, Joint Forces Command interacts ... and what needs tweaking to better prepare future headquarters staffs, Mungus ...

231

Advanced Technological Education Program: 1999 Awards and Activities  

Science.gov (United States)

... By developing and disseminating educational materials and curricula, supporting the preparation and ... education, such as curriculum or educational materials development, faculty or teacher preparation ...

282

Radiation processing used in forestry in Thailand  

Energy Technology Data Exchange (ETDEWEB)

A summary is presented of research being carried out in Thailand on the preparation of irradiation-impregnated wood.

1981-01-01

308

Obtainment of lanthanum oxide by fractionated precipitation method  

International Nuclear Information System (INIS)

... ammonium compounds benzilic acid chemical preparation lanthanum oxides

1979-01-01

311

Novel Antidrugabuse Peptide  

International Science & Technology Center (ISTC)

Natural Biologically Active HLDF6 Peptide as Potential Preparation for Correction of Different Drugabuse Forms

334

Iron in cookies prepared with fortified flour  

International Nuclear Information System (INIS)

... Italy) Istituto Superiore di Sanita (Italy) 207 p. ENVIRONMENTAL SCIENCES

2009-04-01

352

Ground-temperature measurements  

Energy Technology Data Exchange (ETDEWEB)

Three papers are included. A separate abstract was prepared for each one. (MHR)

1981-01-01

395

Contribution to the radiation preparation of wood-plastic materials. Pt. 7  

International Nuclear Information System (INIS)

... odd nuclei organic compounds radiation effects radioisotopes synthesis

1974-01-01

396

Contribution to the radiation preparation of wood-plastic materials. Pt. 6  

International Nuclear Information System (INIS)

... compounds polymers polyolefins polyvinyls radiation effects SYNTHESIS.

1974-01-01

397

Contribution to the radiation preparation of wood-plastic materials Pt. 3  

International Nuclear Information System (INIS)

... compounds plants radiation effects radioisotopes reaction kinetics trees

1974-01-01

408

Biocontrol Agents of Crops Diseases  

International Science & Technology Center (ISTC)

Scale up of Technology for Production and Application of Rhizobacteria-Based Preparations as Biocontrol Agents of Crop Diseases

426

Wet chemical etch solutions for Al{sub x}Ga{sub 1{minus}x}P  

Science.gov (United States)

Heterostructures based on AlGaInP alloy compounds are very attractive for visible semiconductor lasers, heterojunction bipolar transistors (HBTs), and high-electron-mobility transistors (HEMTs) lattice matched to GaAs substrates. Several wet etching solutions for AlGaP of different compositions have been studied. Al{sub 0.5}Ga{sub 0.5}P is found to etch in HF, H{sub 3}PO{sub 4}, hyphosphorous acid (HOPH{sub 2}:O), HCl, KOH, and 1% Br{sub 2}-methanol (MeOH). Etching of Al{sub 0.5}Ga{sub 0.5}P in HCl is reaction limited with an activation energy of {approximately}54.4 kJ/mol. At fixed conditions, the etch rates of Al{sub x}Ga{sub 1{minus}x}P vary exponentially with x in HF and HCl, while in 1% Br{sub 2}-MeOH and mixtures of HCl and HNO{sub 3} the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for AlGaP over InGaP or AlInP with high selectivity, while HCl is useful for the reverse case. The use of 1% Br{sub 2}-MeOH ...

1996-01-01

427

Si and Si/P implants in In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P  

Science.gov (United States)

Si and Si/P ion implantation doping of In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P has been studied for several Si and P doses at energies of 90 and 100 keV, respectively. For single Si implants in InGaP a maximum Hall sheet electron concentration of 1.33{times}10{sup 13} cm{sup {minus}2} is achieved for a Si dose of 5{times}10{sup 13} cm{sup {minus}2}. When an optimum dose (2.5{times}10{sup 13} cm{sup {minus}2}) P coimplant is performed this electron concentration is increased by 65{percent}. The same dose Si implants in InAlP show a maximum effective activation of 3.9{percent} with no P coimplantation and 5.2{percent} with a P-implant dose 1.5 times the silicon dose. The apparent donor ionization energies are estimated from variable temperature Hall measurements to be 2{endash}5 meV for InGaP and {approximately}80 meV for InAlP. The deeper level in InAlP is attributed to the DX level found in the Al-containing material. The reduction in sheet resistance associated with the ...

1996-06-01

428

Short-wavelength (approx. <6400 A) room-temperature continuous operation of p-n In/sub 0. 5/(Al/sub x/Ga/sub 1//sub -//sub x/)/sub 0. 5/P quantum well lasers  

Science.gov (United States)

Data are presented demonstrating short-wavelength (approx. <6400 A) continuous (cw) laser operation of p-n diode In/sub 0.5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0.5/P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30 /sup 0/C to room temperature (RTapprox. =300 K, lambdaapprox. =6395 A) the threshold current density changes from 2.3 x 10/sup 3/ A/cm/sup 2/ (-30 /sup 0/C) to 3.7 x 10/sup 3/ A/cm/sup 2/ (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7 x 10/sup 3/ W/cm/sup 2/, J/sub eq/approx.2.9 x 10/sup 3/ A/cm/sup 2/) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

1988-11-07

429

Photopumped phonon-assisted laser operation (77 K) of In/sub 0. 5/(Al/sub /ital x//Ga/sub 1/minus//ital x//)/sub 0. 5/P quantum well heterostructures  

Science.gov (United States)

The photopumped phonon-assisted laser operation (612 nm, 77 K) of a high-gapIn/sub 1/minus//ital y//(Al/sub /ital x//Ga/sub 1/minus//ital x//)/sub /ital y//P quantum wellheterostructure (QWH) lattice matched to GaAs (/ital y/approx.0.5) is identified usinga single rectangular sample that is shifted in its heat sinking from (a) low/ital Q/ when clamped onto Au (bare edges) to (b) high /ital Q/ when furthercompressed into Au with all four edges reflecting. For the low-/ital Q/ QWH samplephotopumped in a spot (partially photopumped), phonon-assisted laser operation(abrupt threshold, narrow spectrum) is observed on closely spaced end-to-endlaser modes ..delta../ital E/=/h bar/..omega../sub LO/approx.45--47 meV below the lowestconfined-particle transitions. For the /ital same/ sample shifted tohigh /ital Q/, edge-to-edge laser operation across the sample on confined-particletransitions is ''turned on'' also, thus providing an unambiguous ...

1989-06-12

430

Optical Properties and Wave Propagation in Semiconductor-Based Two-Dimensional Photonic Crystals  

Energy Technology Data Exchange (ETDEWEB)

This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is also provided. The analysis of surface ...

2002-12-31

431

High ion density plasma etching of InGaP, AlInP, and AlGaP in CH{sub 4}/H{sub 2}/Ar  

Science.gov (United States)

High microwave power (1,000 W) electron cyclotron resonance CH{sub 4}/H{sub 2}/Ar discharges produce etch rates for In{sub 0.5}Ga{sub 0.5}P, Al{sub 0.5}In{sub 0.5}P{sub 0.5}, and Al{sub 0.5}Ga{sub 0.5}P of {approximately} 2,000 {angstrom}/min at moderate RF power levels (150 W) and low pressure (1.5 mTorr). This is approximately a factor of five faster than for conventional reactive ion etching conditions where much higher ion energies are necessary. The etched surfaces are smooth over a wide range of CH{sub 4}-to-H{sub 2} ratios and microwave powers. AlInP is more resistant to preferential loss of P from the near-surface during etching than is InGaP. While the etching is ion-driven, pure Ar discharges produce rough surfaces and the CH{sub 4}/H{sub 2} is necessary in the achievement of acceptable morphologies. The InGaAlP/GaAs heterostructure is being increasingly utilized in diode lasers, light emitting diodes, field-effect transistors, and heterojunction bipolar ...

1996-03-01

432

Growth and electronic properties of two-dimensional systems on (110) oriented GaAs  

Energy Technology Data Exchange (ETDEWEB)

As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type layers on (110) GaAs. ...

2005-07-01

433

Diffusion in silicon isotope heterostructures  

Science.gov (United States)

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion ...

2004-05-14

434

Use of surface affinity enrichment and cryo-embedding to prepare in vitro reconstituted mitotic chromosomes for EM tomography  

Energy Technology Data Exchange (ETDEWEB)

We present a novel preparation method for studies of in vitro reconstituted mitotic chromosomes from Xenopus laevis egg extracts. This method involves a gentle adsorption of chromosomes from the extracts using surface affinity enrichment, followed by plunge freezing, freeze-substitution and cryo-embedding before examination by EM tomography. For comparison, chromosomes were also prepared by a conventional method, which included immobilization of chromosomes in agarose and a room-temperature dehydration (embedding) protocol. Three-dimensional reconstructions showed that samples prepared with the new method have a greater interconnectivity of sub-structural features and a higher compaction ratio together with an apparently less perturbed chromatin structure than those prepared using the conventional approach. The implications of the new method for the preparation of other difficult ...

2005-07-15

435

Total Synthesis and Evaluation of C26-Hydroxyepothilone D Derivatives for Photoaffinity Labeling of ?-Tubulin  

UK PubMed Central (United Kingdom)

Three photaffinity labeled derivatives of epothilone D were prepared by total synthesis, using efficient novel asymmetric synthesis methods for the preparation of two important synthetic building...Full Text Available

2010-01-01

436

Stability of Plasma Human Immunodeficiency Virus Load in VACUTAINER PPT Plasma Preparation Tubes during Overnight Shipment  

UK PubMed Central (United Kingdom)

VACUTAINER PPT plasma preparation tubes were evaluated to determine the effects of various handling and shipping conditions on plasma human immunodeficiency virus (HIV) load determinations. Plasmas...Full Text Available

2000-01-01

438

Preparation and characterization of anion exchangers from petroleum asphaltites  

British Library Electronic Table of Contents (United Kingdom)

The chloromethylation reaction of an asphaltite and styrene graft copolymer followed by the amination of the chloromethylated products was optimized. New strongly basic anion exchangers with an exchange capacity of 2.5 mg-equiv/g and a mechanical strength of 93% were prepared.

2011-01-01

439

Preparation and Evaluation of Buccal Bioadhesive Films Containing Clotrimazole  

UK PubMed Central (United Kingdom)

Buccal bioadhesive films, releasing topical drugs in the oral cavity at a slow and predetermined rate, provide distinct advantages over traditional dosage forms. The aim of present study was to prepare...Full Text Available

440

Polymer-cushioned bilayers. I. A structural study of various preparation methods using neutron reflectometry.  

UK PubMed Central (United Kingdom)

This neutron reflectometry study evaluates the structures resulting from different methods of preparing polymer-cushioned lipid bilayers. Four different techniques to deposit a dimyristoylphosphatidylcholine...Full Text Available

1999-09-01

441

Catalyst preparation and characterization, session 1  

Energy Technology Data Exchange (ETDEWEB)

The abstracts of all the presentations (1 plenary session, 2 keynotes, 52 oral communications, 496 posters) of the thematic session 1: 'catalyst preparation and characterization' are gathered in the CD-Rom of the conference. The main application described concerns the petroleum industry. (O.M.)

2004-07-01

445

The preparation of carrier-free "2"0"3Pb for medical use  

International Nuclear Information System (INIS)

... bismuth 203 chemical reactions cyclotrons decay helium 3 beams impurities

452

Research workshop on energy conservation through enhanced heat transfer  

Science.gov (United States)

Seven papers were presented at the meeting. A separate abstract was prepared for each paper. (LCL)

1979-10-01

457

Preparation of Papers for AIAA Technical Conferences  

Science.gov (United States)

The estimated parameter covariance matrix is computed from8. ) ( ) 1. 2. T. T. ( ) ( )(. ?. ?. ?. Cov. E. ??. . ?. = . ? ? ? ? ?. ?. = ?. ?. ? ...

478

Fractures in geothermal reservoirs. Special report No. 12  

Energy Technology Data Exchange (ETDEWEB)

Separate abstracts were prepared for thirteen papers. Two papers were abstracted previously for EDB. (MHR)

1982-01-01

489

Computer and Network Security Information  

Science.gov (United States)

Computer And Network Security: Information For Everyone: This presentation was originally prepared as the 14th talk in a series known as "The Programmer's ...