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This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

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This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

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The temperature dependence of the spontaneous magnetization of epitaxial iron films with a thickness ranging from d=20 to 200nm has been measured. The films are grown on GaAs (100) substrates which are covered by a 150nm thick silver (100) buffer layer. For three-dimensional BCC iron it was observed already in 1929 that saturation of the spontaneous magnetization for T->0 is perfectly described by a T{sup 2} power law. On the other hand, for thin two-dimensional (2D) iron films a T{sup 3/2} law has been established in many recent experimental investigations. In our iron films grown on diamagnetic silver, this dimensionality change occurs at a thickness between d=100 and 200nm. Comparison of the here-observed T{sup 3/2} coefficients with those on iron films grown on paramagnetic tungsten (110) shows that the 2D interactions are ...

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To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these ...

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Short communication.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

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A review is given of the state-of-the-art of single and polycrystalline solar cells, which includes a short theoretical review, laboratory achievements, and production methods. The Si single and polycrystalline cell and the amorphous Si cell are described, including material preparation, crystal and sheet growth, and cell and panel production. Promising second generation thin film solar cells including GaAs, CdS(CuInSe/sub 2/), and CdTe are briefly described. Economical aspects are discussed.

Science.gov (United States)

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS ...

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No abstract prepared.

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Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell with a 1-sun AM1.5 ...

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This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

Science.gov (United States)

Manufacture of cadmium sulfide thin film solar cells

International Nuclear Information System (INIS)

A wide variety of thin film coatings, deposited by different techniques and with potential applications in various important areas, have been characterised by the Phase Modulated Spectroscopic Ellipsometer, installed recently in the Spectroscopy Division, B.A.R.C. The Phase Modulated technique provides a faster and more accurate data acquisition process than the conventional ellipsometry. The measured Ellipsometry spectra are fitted with theoretical spectra generated assuming an appropriate model regarding the sample. The fittings have been done objectively by minimising the squared difference (#chi#"2) between the measured and calculated values of the ellipsometric parameters and thus accurate information have been derived regarding the thickness and optical constants (viz, the refractive index and extinction coefficient) of the different layers, the surface roughness and the inhomogeneities present in the layers. Measurements have been done ...

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

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No abstract prepared.

KoreaScience (Korea)

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Science.gov (United States)

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

International Nuclear Information System (INIS)

A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.

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The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

CERN Document Server

A simple experiment to observe weak localization in thin Ag films is presented. A clear theoretical signature of weak localization is predicted in mangetoresistive measurements of thin films samples. We present a simple method for making thin Ag film samples, using evaporative deposition, and observing the small magnetoresistive signal, using a resistance bridge technique. Typical results from our students show that Ag films show the predicted behavior for weak localization with spin effects. These effects can be easily observed in a liquid helium dewar.

Science.gov (United States)

Thin film solar cells and solar cell testing - photovoltaic cells, radiation damage to cadmium sulfide solar cells, and airplane testing of solar cells

Science.gov (United States)

A thin-film evaporator requires only a short heating time to concentrate a solution since it has a high thermal efficiency and has a small capacity. Thus, the chemical industry often uses this type of evaporator for concentrating materials that are subjec...

Science.gov (United States)

PMID:21671451

International Nuclear Information System (INIS)

(Jun 1978). United States Chino, K. Hitachi Research Lab., Japan Kikuchi,

Science.gov (United States)

... analyzer section for angle resolved measurements, and a thin film evaporator with a quartz crystal microbalance to measure the mass deposition. ...

International Nuclear Information System (INIS)

Surface-sensitive UV photoelectron yield spectroscopy was employed to study electron acceptor levels at surfaces of chalcopyrite structure Cu-In-Se thin films. Surface Fermi level pinning was observed for Cu-rich films. Shallow acceptor levels ascribable to defects Cu_I_n and V_C_u were observed for near-stoichiometric and In-rich films respectively. (orig.).

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Polyacrylonitrile films have been spin cast and pyrolyzed to produce thin (500--1500 A) carbon films. These films have higher electrical conductivities than films produced by other methods at similar temperatures. The conductivity can be varied by at least four orders of magnitude by changing the pyrolysis temperature. Ultraviolet, infrared, and Raman spectroscopies were used to investigate the chemical structure of the films during different stages of processing.

International Nuclear Information System (INIS)

Iron oxide thin films have been obtained by spray pyrolysis using 100% methanolic and ethanolic solutions of iron tri-chloride. The films were deposited onto ITO-coated glass substrates. The preparative conditions have been optimized to obtain compact, pin-hole-free and smooth thin films which are adherent to the substrate. The structural, morphological and compositional characterizations have been carried out by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The films deposited using ethanolic solution results into pure hematite; #alpha#-Fe_2O_3 thin films, however, films deposited using methanolic solution consists of hematite and maghemite-c phases of iron oxide. The films are nanocrystalline with particle size of 30-40 nm. The optical ...

International Nuclear Information System (INIS)

YBa_2Cu_3O_7_-_x thick films have been deposited on silver sheets and MgO single crystals by spray pyrolysis. Film texture is related to film thickness and sintering temperature. The X-ray intensity ratio of the 005 peak to the 110 peak is higher for thin films deposited at the higher temperatures. However, elevated temperatures promote copper diffusion and second-phase formation in films deposited on silver. Films deposited on MgO can have larger grain sizes and are more oriented than those deposited on silver.

International Nuclear Information System (INIS)

Short communication. 2 figs.

Energy Technology Data Exchange (ETDEWEB)

Nanocrystalline MnO thin film has been prepared by a pulsed laser deposition (PLD) method. The reversible lithium storage capacity of the MnO thin film electrodes at 0.125C is over 472 mAh g{sup -1} (3484 mAh cm{sup -3}) and can be retained more than 90% after 25 cycles. At a rate of 6C, 55% value of the capacity at 0.125C rate can be obtained for both charge and discharge. As-prepared MnO thin film electrodes show the lowest values of overpotential for both charge and discharge among transition metal oxides. All these performances make MnO a promising high capacity anode material for Li-ion batteries. (author)

Science.gov (United States)

... Abstract : Single crystals of Pb(x)Sn(1-x)Te alloy have been grown with o = or thin film evaporator. ...

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Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.

International Nuclear Information System (INIS)

The possibility to compress and to split laser pulses at their nonlinear optical transmission through semiconductor films was investigated

International Nuclear Information System (INIS)

The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.

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The goal of this research program is to determine whether pulsed laser deposition is an effective alternative method for growing TiCN thin films. Pulsed laser deposition (PLD) is chosen because of its well-documented capability for growing uniform, stoichiometric films in ultra-high vacuum or gaseous environments. Processing of thin films by PLD is also achieved at relatively low temperatures compared with CVD processing. Given these attributes, the primary objectives in this article are to determine whether nitrogen may be readily incorporated into films resulting from the laser-ablation of TiC in an N{sub 2} environment, determine what effect nitrogen has on mechanical properties, and determine whether nitrogen incorporation is strongly influenced by processes unrelated to laser deposition (e.g., thermally-activated surface reactions).

British Library Electronic Table of Contents (United Kingdom)

In this paper, it is shown that (In1?xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.

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The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V{sub GS} = V{sub DS}/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, ...

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An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for terrestrial as well as ...

Energy Technology Data Exchange (ETDEWEB)

Pulsed laser deposition (PLD) is known for its capacity to reproduce a target composition on a substrate. The authors have used this deposition technique to produce thin films of transition metal chalcogenides. However, the deposits were always deficient in Te relative to the starting material (composed by a refractory metal (niobium) and a chalcogene (tellurium)). Variations of the interreticular distances have been observed with respect to fluence and substrate temperature. The authors show that spatial composition of the films is determined by a degree of crystallinity of deposit and by the reaction of formation of Te{sub 2} molecule within laser induced plume. Two kinds of deposits have been obtained: Nb{sub 5}Te{sub 4}-type thin films which have a one-dimensional structure and NbTe{sub 2}-type thin films which have a two-dimensional ...

British Library Electronic Table of Contents (United Kingdom)

In this work the DC and AC characteristics for metal-LB film-metal structures deposited by a standard Langmuir-Blodgett film deposition technique are investigated. The conduction mechanism has been studied for a thin film structure in which a calix[4]arene substituted with carboxylic acid groups has been deposited alternately with a calix[4]arene molecule substituted with amine groups. This LB film structure shows a typical insulating behaviour for low voltage values and the Schottky effect becomes dominant when the voltage increases. The conductivity at low voltage values was found to be 1.34x10^-^1^3Scm^-^1. The height of the potential barrier was determined to be 1.65eV for this alternate layer LB film system.

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Crude N,N-dialkylcarbamoylmethylphosphonates and phosphine oxide extractants, and particularly crude dihexyl N,N-diethylcarbamoylmethylphosphonate and octylphenyl N,N-diisobutylcarbamoyl phosphine oxide, are purified by distilling the crude materials in a thin film evaporator. Preferably, the crude materials are reacted with concentrated hydrochloric acid and then with aqueous sodium hydroxide prior to distillation in the thin film evaporator to hydrolyze impurities contained in them. The purified extractants are useful for extracting actinides and lanthanides from liquid waste streams. (author).

International Nuclear Information System (INIS)

The phenomenological description of the giant magnetoresistance effect as well as discussion of the requirements which must be fulfilled in giant magnetoresistance thin film structures are given in the first part of our review. In the second part the magnetization reversal and giant magnetoresistance effect of antiferromagnetically coupled multilayers, spin Valve and pseudo-spin valve thin film structures are explained. For these structures we also discuss the influence of the structure defects such as surface roughness and pinholes on the giant magnetoresistance effect. (author)

International Nuclear Information System (INIS)

The optical, electromagnetic and mechanical properties of thin films (TFs) are directly correlated to their morphology at the nanoscale. This, in concert with the fact that new deposition techniques are enabling the growth of thin films with very complex morphologies, there is an increasing interest in model-based simulation (MBS) for the design of engineering structures (including nanostructures), and increasing computer speeds are beginning to make MBS an effective design tool capable of bridging the nanoscale with the continuum scale, has made it increasingly important to understand how the nanostructure of a thin film impacts its properties at all length scales. The authors have developed the capability to determine the mechanical properties of thin films with amorphous nanostructure by combining molecular dynamics, ...

Science.gov (United States)

Lunar resource utilization has focused principally on the extraction of oxygen from the lunar regolith. A number of schemes have been proposed for oxygen extraction from Ilmenite and Anorthite. Serendipitously, these schemes have as their by-products (or more directly as their "waste products"), materials needed for the fabrication of thin film silicon solar cells. Thus lunar surface possesses both the elemental components needed for the fabrication of silicon solar cells and a vacuum environment that allows for vacuum deposition of thin film solar cells directly on the surface of the Moon without the need for vacuum chambers. In support of the US space exploration initiative a new architecture for the production of thin film solar cells on directly on the lunar surface is proposed. The paper discusses experimental data on the fabrication and properties of lunar ...

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Three-dimensional porous Sn thin film electrodes were prepared by electroless deposition on copper foam, then its morphology and electrochemical property were studied by means of scanning electron microscope (SEM), X-ray diffraction (XRD), electrochemical cycling test and cyclic voltammetry (CV). The porous framework and micro-holes have shown a great structure advantage in restricting severe volume changes when the Sn thin film was employed as anode for lithium-ion battery. The film electrode of sample C with an initial capacity of 676 mAh g{sup -1} showed good cycle performance displayed by retaining a capacity of 313 mAh g{sup -1} after 100 cycles.

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Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation (< 0.005 cc/m{sup 2}/day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging.

British Library Electronic Table of Contents (United Kingdom)

Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO"2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H"2, H"2O and CO"2. The CO"2 outgassing could be correlated with CF"4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF"4-plasma-cleaned interface.

International Nuclear Information System (INIS)

Heusler films with L2_1 and B2 structure are deposited simultaneously on amorphous carbon films, Si(100) surfaces, and in situ cleaved InAs(110) surfaces by coevaporation of Ni and the alloy MnIn. Morphology, structure, and stoichiometry are investigated with transmission-electron microscopy, electron diffraction, and X-ray spectroscopy. The almost perfect lattice match supports highly oriented growth of Ni_2MnIn on InAs, which is proven by electron diffraction under grazing incidence. The electrical resistivity of thin films on Si show metallic behavior. At temperatures of liquid helium point-contact Andreev reflection spectroscopy is performed on films grown on Si(100) and in situ cleaved InAs(110) surfaces yielding spin polarizations comparable to the ones of Fe, Ni, Co, and permalloy (Ni_8_0Fe_2_0).

Energy Technology Data Exchange (ETDEWEB)

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

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The evolution of strain in the Pd-Si system during the growth of Pd{sub 2}Si thin films on Si (100) substrate has been followed in situ using a double optical beam technique. As was observed for the Pt-Si system, the reaction to form Pd{sub 2}Si yields a compressive intrinsic surface film stress as well as for the silicon-rich suicides as proposed by Angilello et al. [Thin Film Interfaces and Interactions, edited by J. Baglin and J. Poate (The Electrochemical Society, Pennington, NJ, 1980)]. A transmission electron microscopy analysis has revealed grain growth during the formation of Pd{sub 2}Si which cannot account for the compressive film stresses. The formation of silicide at the interfaces rather than the overall change in volume agrees with the sign of the stresses formed. 29 refs., 4 figs., 3 tabs.

International Nuclear Information System (INIS)

Contrary to the electronic excitation induced phenomena of desorption and sputtering, we observed incorporation of oxygen in a thin Fe film during its irradiation with swift heavy ions. It is observed that the adsorbed oxygen diffuses in to the Fe film. The incorporation of oxygen and its diffusion in the bulk of the film is a manifestation of extremely large electronic energy deposition by the incident ions. It is shown that the experimentally observed high diffusivity of oxygen in Fe during irradiation is due to the existence of transient melt phase of Fe.

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence analysis was used for the determination of Cu, Y and Ba in very thin high-temperature superconducting films. The precision of the method is better than 3% for about 1 #mu#m thick films. The atomic emission ICP spectrometry was used to testify results of XRF analysis. An acceptable agreement of both methods was obtained. (author) 4 refs.; 2 tabs.

British Library Electronic Table of Contents (United Kingdom)

Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heteros...

International Nuclear Information System (INIS)

Magnetic structures and magnetocrystalline anisotropy (MCA) of tetragonal phase Fe_3Pt with an L1_2 atomic ordering in bulk and thin film are investigated by means of the first-principles full-potential linearized augmented plane-wave method. The results obtained predict that the tetragonal phase, in which the tetragonal distortion with (c/a) = 0.95 makes an asymmetry of magnetic properties along the c-axis (out-of-plane) and a-axis (in-plane), has an out-of-plane MCA. In addition, from the thin film calculations, the presence of surface is found to strongly enhance the out-of-plane MCA.

International Nuclear Information System (INIS)

High-resolution electron microscope observations confirm the presence of small crystallites in thin TbFeCo films protected by Si_3N_4 overcoats. Selected area electron diffraction patterns in top-view projection indicate that the crystals have a face-centered-cubic structure. Microscope analysis reveals grain growth following annealing of these protected thin films at 200 degree C in vacuum, and Kerr measurements yield large reductions in coercivity relative to the room-temperature value. The typical grain size visible in top-view observations increases from about 3 nm in the as-deposited samples to about 30 nm after annealing at 200 degree C for 36 h while the static coercivity, H_c, drops by about 40%. The fcc structure of the crystals is retained after annealing.

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were ...

Energy Technology Data Exchange (ETDEWEB)

Oregon State University (OSU) and the Pacific Northwest National Laboratory (PNNL) were funded by the U.S. Department of Energy to conduct research focused on resolving the key technical issues that limited the deployment of efficient and extremely compact microtechnology based heat actuated absorption heat pumps and gas absorbers. Success in demonstrating these technologies will reduce the main barriers to the deployment of a technology that can significantly reduce energy consumption in the building, automotive and industrial sectors while providing a technology that can improve our ability to sequester CO{sub 2}. The proposed research cost $939,477. $539,477 of the proposed amount funded research conducted at OSU while the balance ($400,000) was used at PNNL. The project lasted 42 months and started in April 2001. Recent developments at the Pacific Northwest National Laboratory and Oregon State University suggest that the performance of absorption and desorption systems can be ...

International Nuclear Information System (INIS)

Plasma-deposited thin films prepared at room temperature, ranging from 46 to 250 A of PdAu on #approx#45-50 A Si-oxide and Si-oxynitride films grown on Si wafers were studied. Grazing incidence X-ray diffraction, X-ray reflectivity, and XPS depth profile techniques were used to characterize the thin films. A reactive interface involving Pd- and Au-silicides is formed, linking the thin film to the Si-oxide and Si-oxynitride films: a small fraction of Pd and Au atoms from PdAu migrate into the Si substrate, first penetrating the oxide layer, and the small fraction of Si atoms from the oxide layer migrate into the PdAu film and form a silicide interlayer consisting of a reactive interface made up of mixtures of Au- and Pd-silicides interspersed within the matrix of PdAu and substrate. The concentration ...

Energy Technology Data Exchange (ETDEWEB)

Ultra-thin, uniform, pinhole-free solid polymer electrolyte films having a fixed carboxylic ester group of approximately 1 {mu}m thickness were prepared by polymerization of methyl acrylate and tris(2-methoxyethoxy)vinylsilane in a glow discharge plasma. The carboxylic ester group of the plasma polymer were transformed to lithium carboxylate groups by treatment with lithium iodide. This process give a single lithium ion conductive film. These solid polymer electrolyte films showed ionic conductivities of the order of 10{sup -8} S cm{sup -1} (10{sup 4} {omega} cm{sup 2} resistance per unit area) at room temperature. (orig.).

International Nuclear Information System (INIS)

Most surface-acoustic-wave and thin-film optical devices are made by the planar fabrication process. The exposure of the pattern in the polymer film is the first and most crucial step in ensuring desired device geometry, dimensional control, and freedom from pattern distortion. The methods of exposing the polymer film include: optical projection, conventional contact printing, conformable photomask contact printing, holographic recording, scanning electron beam lithography, projection electron lithography, and x-ray lithography. In this paper scanning electron beam lithography, conformable photomask contact printing, holographic recording, and x-ray lithography are discussed. In the last section, ion beam etching of relief structures is discussed.

British Library Electronic Table of Contents (United Kingdom)

In the present study the optical properties of co-evaporated indium sulfide thin films are investigated. Before being optically characterized, the composition as well as the crystalline properties of the film have been checked with the help of energy dispersive spectroscopy (EDX) and X-Ray diffraction (XRD) analyses. The optical absorption coefficient ? of this indium sulfide film has been deduced from reflectivity R(?) and transmission T(?) measurements. The fit of the curve representing ?(h?) suggests that the ?-In2S3 has an indirect bandgap of 2.01?eV. Density functional theory (DFT) calculations are performed on this indium sulfide compound, using TB-LMTO code. Through these band structure investigations, an indirect bandgap is predicted as observed experimentally. The top of the valen...

Science.gov (United States)

During Phase II multi-junction solar cell will be grown on the large grain thin film produced during Phase I on flexible/low cost metal foil substrate. ...

Energy Technology Data Exchange (ETDEWEB)

A thin film microoxidation test utilizing the concept of the Lubricant Stability Map has been used to study the effect of temperature on deposit formation by lubricants on upper piston locations of low heat rejection engines. The stability maps were established for two formulated lubricants in this study. These two lubricants were also evaluated in a series of engine tests with various piston temperatures. The deposition phenomena observed in the engine tests have been adequately simulated and described by the stability maps. It is concluded that lubricants at upper piston locations are under a thin film condition similar to that achieved by the thin film microoxidation test. The deposit formation trend is determined by the volatility, thermal stability, and oxidative stability of the base stock. Additives have little effect on deposit formation at very high ...

Science.gov (United States)

international vehicles, control centers, and ground support personnel. ... consists of thin membranes made from a polymer-based film and ..... (including airplanes and submarines), environmental monitoring, and control ...... sciences can use it to analyze the birth and death of stars, the formation of solar ...

Science.gov (United States)

CuPt-type ordering in In{sub 0.49}Al{sub 0.51}P is studied by TEM. The lattice-matched film was grown by MOCVD on a GaAs substrate oriented 10{sup o} off (001) towards [110], at 650 C and 25 nm/min. TEM [110] and [1{bar 1}0] cross-sections (XS) were made by wedge polishing and 2 kV Ar ion milling. In CuPt-type ordering of In{sub 0.52}Ga{sub 0.48}P, alternating In-Ga-In-Ga {l_brace}111{r_brace} planes of group III atoms produce 1/2 {bar 1}11 and 1/2 1{bar 1}1 order spots in the 110 SADP, while the [1{bar 1}0] SADP shows no order spots [1-3]. A few studies have reported this type of order in In{sub 0.49}Al{sub 0.51}P [4]. The 004 BF image of the [1{bar 1}0] XS in Fig. 1 shows uneven light/dark contrast modulation due to phase separation often observed in In{sub 0.52}Ga{sub 0.48}P. There are also light/dark layers marked ML parallel to the film growth plane; such unintentional multilayers have also been observed [5] but their ...

International Nuclear Information System (INIS)

Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 A within 3000 A wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier-carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in InGaAs but may be due to stimulated emission in InGaAsN. The results reveal that the ...

Energy Technology Data Exchange (ETDEWEB)

Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

Energy Technology Data Exchange (ETDEWEB)

A liquid-fillet is formed in front of a rotor blade in the cylinder of a horizontal agitated thin-film evaporator. Its thickness varies due to the gravity while the blade revolves inside the cylinder. In the critical condition, the amplitude of the oscillation becomes infinite and the phase advances 180 degrees. Prior to the critical condition, the experimental data agrees fairly well with the predictions. Near the critical condition, the amplitutde increases and the phase advances 60 degrees. In other words, the transition to the critical condition occurs continuously. (6 figs, 1 ref)

Energy Technology Data Exchange (ETDEWEB)

Solid-state acoustic sensors for monitoring conditions at a surface immersed in a liquid and for monitoring concentrations of species in a liquid and for monitoring electrical properties of a liquid are formed by placing interdigital input and output transducers on a piezoelectric substrate and propagating acoustic plate modes therebetween. The deposition or removal of material on or from, respectively, a thin film in contact with the surface, or changes in the mechanical properties of a thin film in contact with the surface, or changes in the electrical characteristics of the solution, create perturbations in the velocity and attenuation of the acoustic plate modes as a function of these properties or changes in them.

Energy Technology Data Exchange (ETDEWEB)

In this study, WO{sub 3} thin films were grown on glass substrates using an aqueous solution containing tungstate (NH{sub 4}){sub 2}WO{sub 4} as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at T{sub s} = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical ...

Energy Technology Data Exchange (ETDEWEB)

Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films were successfully prepared by the solution deposition using lithium acetate, aluminum nitrate, ammonium dihydrogen phosphate and titanium butoxide as starting materials. The structure, surface morphology, electrochemical window, and ionic conductivity of the films were studied by X-ray diffraction, scanning electron microscopy, cyclic voltammetry and AC impedance. The results showed that Li{sub 1.3}Al{sub 0.3}Ti{sub 1.7}(PO{sub 4}){sub 3} thin films annealed between 750 deg. C and 900 deg. C prepared by this method were well crystallized, homogenous and crack-free. The electrochemical window was beyond 2.4 V and the ionic conductivity was approximately 1.57x10{sup -5} S/cm at room temperature for the film annealed at 800 deg. C for 30 min.

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power conversion efficiency of the ...

International Nuclear Information System (INIS)

Thermally stable materials with low dielectric constant (k<3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low ...

Energy Technology Data Exchange (ETDEWEB)

The bibliography contains citations concerning the structural properties of sputtered tantalum and tantalum compounds. The preparation of thin film capacitors and resistors is described. The electrical properties of the sputtered films are also included. The influence of the substrate on the properties of the coatings is considered, including adherence of the coating to the substrate, and the effects of impurities on coating integrity. (Contains 250 citations and includes a subject term index and title list.)

Energy Technology Data Exchange (ETDEWEB)

Diamond-like carbon thin films for tribological applications were deposited by d.c.-magnetron sputtering of a graphite target in a pure argon atmosphere or in a reactive hydrogen or methane atmosphere at pressures between 0.1 and 1 Pa in a graded constitution to improve adhesion and reduce residual stress. The temperature of the metallic, carbon- and ceramic-like substrates was below 100 C. The mechanical, thermal, electronic and optical properties of the carbon thin films show a significant dependence on the ion energy. Below 220 eV, strongly adherent black conductive films with hardness values up to 2000 HV0.05 were obtained. Hard and superhard diamond-like carbon thin films were deposited in an energy range between 220 and 370 eV with hardness values up to 4000 HV0.05. They are insulating, optically transparent and show a high degree of ...

International Nuclear Information System (INIS)

Various examples of applications of these two techniques are described. A part of them are related to the analysis of adsorbed layers formed during gaz-metal interactions. The others are concerned with the analysis of passive films formed during dry and wet corrosion. Problems related to the calibration of these techniques are discussed.

Energy Technology Data Exchange (ETDEWEB)

We have studied the nucleation and growth processes in a chemical vapor deposition (CVD) diamond film using a tomographic electron backscattering diffraction method (3D EBSD). The approach is based on the combination of a focused ion beam (FIB) unit for serial sectioning in conjunction with high-resolution EBSD. Individual diamond grains were investigated in 3-dimensions particularly with regard to the role of twinning.

Energy Technology Data Exchange (ETDEWEB)

Thin passive films formed on highly corrosion-resistant type-312L stainless steel, containing 20 mass% chromium and 6 mass% molybdenum, in 2 mol dm{sup -3} HCl solution at 293 K have been analyzed by glow discharge optical emission spectroscopy (GDOES). The stainless steel does not suffer pitting corrosion even in this aggressive solution, showing a wide passive potential region. The depth profiles obtained clearly show a two-layer structure of the air-formed and passive films: an outer iron-rich layer and an inner layer highly enriched in chromium. Alloy-constituting molybdenum is deficient in the inner layer of the passive films and is enriched in the outer layer, particularly at the active dissolution potential. The molybdenum species in the outer layer may retard the active dissolution of stainless steel, promoting the formation of stable passive films highly enriched in ...

Energy Technology Data Exchange (ETDEWEB)

Described herein are the results of the FY1994 research program for analysis and evaluation for thin film solar cells. The study on quantitative analysis of hydrogen atoms in a plasma determines quantity of hydrogen atoms in the plasma of monosilane diluted with hydrogen. It is found, contrary to expectation, that quantity of hydrogen atoms in the plasma decreases as it is more diluted with hydrogen. The study on light-induced degradation of the thin chlorine-base amorphous silicon films confirms that the plasma CVD method with 20% of dichlorosilane gas added to monosilane gas produces the thin amorphous silicon film 3 times faster than the conventional method. The thin film has essentially the same defect density as the one prepared by the conventional method, showing good photoelectric characteristics. The ...

British Library Electronic Table of Contents (United Kingdom)

A novel thin-film composite polyamide nanofiltration membrane was prepared through interfacial polymerization of polymeric polyamine polyvinylamine (PVAm) with isophthaloyl chloride (IPC) on a polysulfone supporting film. The composite membranes were prepared under different conditions and characterized in terms of chemical and morphological structures, surface zeta potential, pure water permeability, and rejection to different solutes including electrolytes and sucrose. The results showed that the membrane performance was significantly affected by the content of amine units of PVAm and the concentrations of PVAm and IPC. The increase of the content of amine units of PVAm and the concentration of IPC resulted in an augment in salt rejection and a decrease in permeability, while the increas...

CERN Document Server

substrate). Within each group of simulations, three lubricant film thicknesses are studied to examine the effect of varying lubricant thickness. Statistical data are collected from each simulation and presented in this work. Via these data, together with the evolution, of atomic and molecular configurations, a very detailed picture of the properties of this thin film interface is presented. In particular, we conclude that perfluoropolyether lubricant forms distinct molecular layers when confined between two substrates, the rate of heat generation under shearing conditions typical of those in a head-disk interface is insufficient for thermal mechanisms to result directly in lubricant degradation, and mechanical stresses attained in the head-disk interface are unlikely to result in any significant degree of lubricant degradation. This thesis examines the tribology of a head-disk interface in an operating hard disk drive via ...

Energy Technology Data Exchange (ETDEWEB)

Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

Energy Technology Data Exchange (ETDEWEB)

The growth of the Pd{sub 2}Si thin fllms on Si(111) substrates has been monitored by an {ital in} {ital situ} x-ray diffraction technique in vacuum and in helium atmosphere from 160 to 250 {degree}C. A familiar parabolic growth rate was found, confirming the diffusion-controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd{sub 2}Si fllm was observed when the reaction temperature exceeds 200 {degree}C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.

Energy Technology Data Exchange (ETDEWEB)

A new magnetic macroparticle filter design consisting of two 90{sup o} filters forming an S-shape is described. Transport properties of this S-filter are investigated using Langmuir and deposition probes. It is shown that filter efficiency is product of the efficiencies of two 90{sup o} filters and the deposition rate is still acceptably high to perform thin film deposition. Films of amorphous hard carbon have been deposited using a 90{sup o} filter and the S-filter, and macroparticle content of the films are compared.

Energy Technology Data Exchange (ETDEWEB)

Three kinds of surface modifications were carried out on LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-films to improve the charge and discharge characteristics of LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} positive electrodes. Among them, Zr(OBu){sub 4}/poly(methyl methacrylate) (PMMA)-treated LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-film electrodes showed charge and discharge efficiency of 80-84% in the first cycle, which was much higher than that for an untreated LiNi{sub 1/2}Mn{sub 3/2}O{sub 4} thin-film electrode (73%). The values of the charge and discharge efficiency were still higher than that for an untreated electrode after the 30th cycle. The charge and discharge curves gave two plateaus at around 4.72 and 4.76 V, which were very similar to those for the untreated electrode. Ac impedance spectroscopy revealed that the surface film resistance should not increase by Zr(OBu){sub 4}/PMMA treatment. XPS measurements ...

Energy Technology Data Exchange (ETDEWEB)

Thin films of the protein, lysozyme, have been deposited by the matrix-assisted pulsed laser evaporation (MAPLE) technique. Frozen targets of 0.3-1.0 wt.% lysozyme dissolved in ultrapure water were irradiated by laser light at 355 nm with a fluence of 2 J/cm{sup 2}. The surface quality of the thin lysozyme films of different thickness deposited on 7 mm x 7 mm Si-<1 0 0>-wafers was investigated with scanning electron microscopy and atomic force microscopy. Already at comparatively low thickness, {approx}20 nm, the substrate is covered by intact lysozyme molecules and fragments. The concentration of lysozyme in the ice matrix apparently does not play any significant role for the morphology of the film. The morphology obtained with MAPLE has been compared with results for direct laser irradiation of a pressed lysozyme sample (i.e. pulsed laser deposition (PLD))

Energy Technology Data Exchange (ETDEWEB)

Vertical thin film evaporators have been used to concentrate and dry solutions because their rotating swing blades prevent scale from being deposited on the heated surfaces. Powdering capacity of the vertical thin film evaporator was examined experimentally for drying applications of radioactive liquid waste generated from nuclear power plants. As a result, it was found that the powdering capacity increased with the blade rotation, changing significantly in the low ratational region and scarcely in the high rotational region. The powdering capacity in the high rotational region was restricted by the lack of heat flux which was theoretically evaluated for the concentrating process. As the critical factor in the low rotational region was not clear, a visual test apparatus was made to observe flow patterns in the evaporator, and a powdering model was obtained. This model showed that powdering process was ...

Science.gov (United States)

This report summarizes the results obtained under a contract from 1974 to 1977, focusing on silicide formation of thin metal films on a Si substrate. The main thrust of the effort was directed at: (1) Development of the data base on thin-film silicide formation, and the investigation of the influence of the Si substrate on the silicide formation. When taken in context with results of other studies, the data obtained exhibit a clear pattern of behavior among the various metal films, but the detailed picture appears to be complex; (2) Development of marker experiments by ion-implanted Ar or Xe markers; (3) Clarification of the role played by oxygen contamination in silicide formation; (4) Stability of silicide layers; (5) Reaction of metal layers with SiO/sub 2/; (6) Electrical characteristics of Pd/sub 2/Si; and (7) A computer program was written to synthesize backscattering spectra for ...

Energy Technology Data Exchange (ETDEWEB)

Highly resistant, high-transmittance woodceramic thin films were prepared using rf magnetron sputtering of a woodceramic disk in argon plasma. A film series was deposited based on substrate temperature, which was varied from 50 to 500 degree C. The film's electrical and optical properties depended on substrate temperature. Films deposited below 300 degree C were insulative, {rho}>10{sup 10} {omega} {center_dot} cm. Films deposited at 50 degree C had a density of 1.9-2.2 g/cm{sup 3} comparable to that of single crystal graphite. Below 200 degree C, films had higher transmittance than typical DLC films in the visible and infrared region. Infrared C-H absorption spectrum was observed by Ft-IR and there exist two types of bonding corresponding to sp{sup 2} or SP{sup 3}. (author)

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was ...

International Nuclear Information System (INIS)

Transparent aluminum doped zinc oxide (ZnO:Al, AZO) conducting thin films with a high-preferential c-axis orientation were synthesized using a new sol-gel formula. The films were deposited using a spin-coating route onto borosilicate glass substrates. We used propylene glycol methyl ether (PGME) as the solvent in place of ethylene glycol monomethyl ether (EGME), which is commonly used because it is easier to deposit onto the substrates. PGME is also superior in terms of health and safety. PGME solvent does not need to settle for several days before use and can be spin-coated as soon as the raw material and solvent are mixed. The effects of this novel solvent on the structural, morphological, electrical and optical properties are discussed using XRD, SEM, a four-point probe and UV-VIS spectrophotometry. It was found that the films produced with PGME showed a high-preferential c-axis orientation and ...

International Nuclear Information System (INIS)

Oxide superconducting thin films were irradiated with X-rays and ultra-violet (UV) light, and induced radiation effects on electrical and chemical properties were examined by transport measurement, X-ray diffraction analysis (XRD), diamagnetization measurement and X-ray photoemission spectroscopy (XPS). After irradiation for ErBa_2Cu_3O_x films with X-rays emitted from a Rh tube for 100 hours, superconductivity was remarkably damaged, destroying the zero-resistance state. The UV-light irradiation for Bi_2Sr_2CaCu_2O_x films was performed in He gas of about 500 Pa with a low pressure mercury lamp. The superconductivity was gradually degraded with the UV irradiation time up to 70 minutes. In both cases, adequate oxygen-annealing treatments restored superconductivity. The X-ray photoemission spectra showed that the mean Cu valence of the films was decreased approximately from +2 to +1 ...

International Nuclear Information System (INIS)

The authors show that dramatically different in-plane crystallographic textures can be produced in body centered cubic (bcc) metal thin films deposited under different conditions. The orientation distribution of polycrystalline bcc thin films on amorphous substrates often has a strong (110) fiber texture, and an in-plane texture may develop when deposition takes place with an off-normal incidence flux of energetic ions or atoms. Three orientations in Nb films have been observed in which the energetic particle flux coincides with crystal channeling directions. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems. The selected orientations are reviewed, and examples are given in which the in-plane orientation of Mo deposited in two similar magnetron system differs by a 90 deg C rotation. The origins of in-plane texture in ...

Energy Technology Data Exchange (ETDEWEB)

High-performance polysilicon thin-film transistors (TFT`s) are fabricated using an excimer laser to recrystallize the undoped channel and dope the source-drain regions. Using a technique the authors call grain engineering they are able to control grain microstructure using laser parameters. Resulting polysilicon films are obtained with average grain sizes of {approximately}4--9 {micro}m in sub-100 nm thick polysilicon films without substrate heating during the laser recrystallization process. Using a simple four-mask self-aligned aluminum top-gate structure, they fabricate TFT`s in these films. By combining the grain-engineered channel polysilicon regions with laser-doped source-drain regions, TFT`s are fabricated with electron mobilities up to 260 cm{sup 2}/Vs and on/off current ratios greater than 10{sup 7} To their knowledge, these devices represent the highest performance laser-processed TFT`s ...

CERN Document Server

A Langmuir film is a molecularly thin film on the surface of a fluid; we study the evolution of a Langmuir film with two co-existing fluid phases driven by an inter-phase line tension and damped by the viscous drag of the underlying subfluid. Experimentally, we study an 8CB Langmuir film via digitally-imaged Brewster Angle Microscopy (BAM) in a four-roll mill setup which applies a transient strain and images the response. When a compact domain is stretched by the imposed strain, it first assumes a bola shape with two tear-drop shaped reservoirs connected by a thin tether which then slowly relaxes to a circular domain which minimizes the interfacial energy of the system. We process the digital images of the experiment to extract the domain shapes. We then use one of these shapes as an initial condition for the numerical solution of a boundary-integral model of ...

International Nuclear Information System (INIS)

Thinning specimens to electron transparency for electron microscopy analysis can be done by conventional (2-4 kV) argon ion milling or focused ion beam (FIB) lift-out techniques. Both these methods tend to leave 'mottling' visible on thin specimen areas, and this is believed to be surface damage caused by ion implantation and amorphisation. A low energy (250-500 V) Argon ion polish has been shown to greatly improve specimen quality for crystalline silicon samples. Here we investigate the preparation of technologically important materials for nanoanalysis using conventional and lift-out methods followed by a low energy polish in a GentleMill"T"M low energy ion mill. We use a low energy, low angle (6-8 deg.) ion beam to remove the surface damage from previous processing steps. We assess this method for the preparation of technologically important materials, such as steel, silicon and GaAs. For these materials the ability to ...

Energy Technology Data Exchange (ETDEWEB)

Fe{sub x}Zn{sub 1-x} alloys were electrochemically deposited on aluminum substrates from a sulfate bath. The K{beta}/K{alpha} x-ray intensity ratios of Zn and Fe in Fe{sub x}Zn{sub 1-x} thin films have been experimentally studied. The energy dispersive x-ray fluorescence (EDXRF) technique was used to measure K x-ray photons. Samples were excited by using 59.5 keV photons emitted by a 50 mCi {sup 241}Am radioactive source. The emitted K x-rays were detected by an Ultra-LEGe detector having a resolution of 150 eV at 5.9 keV. In addition, the effect of bath composition on the phase structure was investigated by x-ray diffraction (XRD) analysis. The composition of the thin films was analyzed by atomic absorption spectrometry analysis. Iron content was shown to strongly affect the structure of Zn-Fe alloys. It was found that the K-shell x-ray intensity ratio changed in Fe{sub x}Zn{sub 1-x} ...

Energy Technology Data Exchange (ETDEWEB)

Corrosion characteristics of Al and Cu thin films have been studied in cyclic fog tests using tap water fog and fog created with 0.1% NaCl solution in tap water. Likewise, their corrosion features have been analyzed in continuous immersion testing in the laboratory in distilled water, tap water, in 0.1% NaCl and 3.5% NaCl solutions in distilled water. The corrosion potentials and the corrosion currents of these thin films change and reach steady state values after some time. However, steady state is not realized in 3.5% NaCl solutions. The corrosion current density data have been used to calculate lifetime of 1 {mu}m thick thin films of Al and Cu in the various tests, and assuming that the fog test data would hold under normal exposure conditions, life spans for these thin film sensor elements in actual exterior exposure ...

International Nuclear Information System (INIS)

We have studied in detail the gamma radiation induced changes in the electrical properties of the (TeO_2)_0_._9 (In_2O_3)_0 _._1 thin films of different thicknesses, prepared by thermal evaporation in vacuum. The current-voltage characteristics for the as-deposited and exposed thin films were analysed to obtain current versus dose plots at different applied voltages. These plots clearly show that the current increases quite linearly with the radiation dose over a wide range and that the range of doses is higher for the thicker films. Beyond certain dose (a quantity dependent on the film thickness), however, the current has been observed to decrease. In order to understand the dose dependence of the current, we analysed the optical absorption spectra for the as-deposited and exposed thin films to obtain the dose ...

International Nuclear Information System (INIS)

Iron oxide films have been deposited on Si(100) substrates by chemical vapour deposition (CVD) of iron(III) tert-butoxide ([Fe(O "tBu)_3]_2) in the temperature range 350-450 deg. C. The precursor flux and substrate temperature were varied to control the phase composition, average grain size and film thickness. The nature of substrate and deposition temperature markedly influence the morphology and iron-oxygen stoichiometry in the CVD deposits. Phase transformations in iron oxide films were achieved through precise local and periodic heating of the films by interfering laser beams. The interaction of iron oxide films with short laser pulses (Nd:YAG, 355 nm) induced partial transformation of hematite (#alpha#-Fe_2O_3) to magnetite (Fe_3O_4) or magnetite to wuestite (Fe_1_-_xO), respectively. The phase characterization and morphology of the hematite and magnetite ...

British Library Electronic Table of Contents (United Kingdom)

The properties of ZnO films were investigated as functions of annealing temperatures in H2/Ar and vacuum. The resistivities and mobilities of ZnO films decreased with increase of annealing temperatures in vacuum and H2/Ar ambients. However, the carrier densities of ZnO films increased with increase of annealing temperatures in vacuum and H2/Ar ambients. The resistivities of ZnO2 films annealed at 300degreeC were 2186cm and 798cm in H2/Ar and vacuum ambients, respectively. The resistivities of ZnO films annealed in vacuum and H2/Ar ambients at 600degreeC were similar with 0.040cm and 0.035cm, respectively. The hydrogen donor was more dominant than the oxygen vacancy or Zn interstitial donor in ZnO films annealed in ambient H2/Ar at low temperatures. The average optical transmission was >82%...

British Library Electronic Table of Contents (United Kingdom)

This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl45H2O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, `in- situ doping' resulted i...

CERN Document Server

In order to reduce the activation temperature of the TiZrV alloy, thin films of various compositions were produced by three-cathode magnetron sputtering on stainless-steel substrates. For the characterisation of the activation behaviour the surface chemical composition has been monitored by Auger electron spectroscopy during specific in situ thermal cycles. The volume elemental composition of the film has been measured by energy dispersive X-ray spectroscopy and the morphology (crystal structure and size of the crystallites) has been investigated by X-ray diffraction. The criteria indicating the sample quality and its dependence on film structure and chemical composition are presented and discussed. (13 refs).

International Nuclear Information System (INIS)

The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd_2Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-#sq root#3x#sq root#3R30"0, the feature being similar to the cases of Ag, Au/Si(111) systems. (orig.).

Science.gov (United States)

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

International Nuclear Information System (INIS)

In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate Overlapped ...

Energy Technology Data Exchange (ETDEWEB)

The Raywell Process Plants unit, which reclaims a wide range of organic solvents, including chlorinated hydrocarbons, is based on thin film evaporation and distillation rather than steam distillation, thus reducing the risk of contamination by water. Henry Balfour and Co.'s Pfaudler Solvent Recovery System gives 96% or better solvent recovery and produces a near-solid waste suitable for landfill disposal; like the Raywell system, it uses a mechanically wiped thin-film evaporator. Midland Oil Refineries uses sa Raywell thin-film evaporator for recovery of waste lubricating oils rather than the conventional sulfuric acid/clay treatment, thus avoiding formation of sulfuric acid sludge waste. The Henry Balfour Bioenergy anaerobic digestion system gives yields of fuel gas with 65-75% methane as high as 0.8 cu m/kg BOD; it achieves 95-98% BOD removal with no pH control or nutrient addition because it ...

British Library Electronic Table of Contents (United Kingdom)

Herein, we report engineering of nanostructured p-CuIn3Se5/n-CdS heterojunction thin film on a glass substrate, which is prepared at room temperature using simple wet chemical approach involving ion exchange reactions between CdS and Cu^+, In^3^+ and Se^2^- ions in alkaline medium. The uniform deposition of heterojunction thin films is achieved by optimizing the pH, temperature and molarity of the reactant bath. The as-deposited thin-films were annealed at 200^oC in air for 1h and further characterized for structural, optical and electrical properties using UV-Vis spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), Hall effect for type of conductivity, and I-V measurement to investigate the char...

Energy Technology Data Exchange (ETDEWEB)

Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from ...

Energy Technology Data Exchange (ETDEWEB)

Ion Beam Induced Luminescence (IBIL) and Ion Beam Induced Charge Collection (IBICC) have been applied in the study of the luminescence emission efficiency and investigation of the homogeneity of the luminescence emission in phosphors. The IBIL imaging was performed by using sharply focused ion beams or broad/partially-focused ion beams. The luminescence emission homogeneity in samples was examined to reveal possible distributed crystal-defects that may lead to the inhomogeneity of the luminescence emission in samples.The purpose of the study is to search for suitable luminescent thin films that have high homogeneity of luminescence emission, large IBIL efficiency under heavy ion excitation, and can be placed as a thin layer on the top of microelectronic devices to be analyzed with Ion Photon Emission Microscopy (IPEM). The emission yield was found to be low for organic materials, due to saturation of the light output ...

International Nuclear Information System (INIS)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd_2Si layers. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

British Library Electronic Table of Contents (United Kingdom)

Indium sulfide thin films consisting of porous network of nanoplatelets, have been deposited using chemical bath deposition (CBD) method onto the tin-doped indium oxide (ITO) coated glass substrate. Aqueous solutions of indium sulfate and thioacetamide have been used as indium and sulfur precursors. As a complexing agent, acetic acid was used. The chemically deposited indium sulfide thin films were examined for their structural, surface morphological and optical characterizations. The X-ray diffraction analysis revealed the formation of the cubic b-In2S3 onto the substrate. From scanning electron micrograph, it is observed that the surface of substrate is covered by nanoporous platelets type morphology. The optical studies showed a direct band gap of 2.84eV for indium sulfide platelets. Ph...

International Nuclear Information System (INIS)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10"1"7 to 3 x 10"1"9 cm"-"3. (Author).

British Library Electronic Table of Contents (United Kingdom)

We report the fabrication and characterization of glucose-tolerant Raney-platinum cathodes for oxygen reduction in potentially implantable glucose fuel. Fabricated by extraction of aluminum from 1mm thin platinum-aluminum bi-layers annealed at 300^oC, the novel cathodes show excellent resistance against hydrolytic and oxidative attack. This renders them superior over previous cathodes fabricated from hydrogel-bound catalyst particles. Annealing times of 60, 120, and 240min result in approximately 400-550nm thin porous films (roughness factors ~100-150), which contain platinum and aluminum in a ratio of ~9:1. Aluminum release during electrode operation can be expected to have no significant effect on physiological normal levels, which promises good biocompatibility. Annealing time has a dis...

Energy Technology Data Exchange (ETDEWEB)

The fundamental points to be considered in a waste treatment system for a country like Japan, where the final disposal method has not been decided and the wastes have to be stored in the power plants, are volume reduction of the wastes, safe storage of the wastes in the plant, and flexibility regarding the final disposal. A system has been developed that consists of a thin film evaporator for the direct solidification of the liquid waste, a pelletizer for producing hard pellets from the powdered wastes, a pellet storage unit, and a solidification unit for the final disposal. A pilot plant with waste treatment capacity of 200 kg/h was built in 1976 and has proved the system feasibility. This paper reports on pilot plant tests of the thin film evaporator and other components, tests on pellet deterioration during long term storage, and integrity tests on the final disposal of the pellet bitumen package.

International Nuclear Information System (INIS)

Transmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly cubic Ce"3"+ sites along with the formation of another type of Ce"3"+ site believed to involve a nearby Sr vacancy. We suggest that the association of Ce"3"+ sites with V_S_r shifts the electroluminescence towards larger wavelengths as the symmetry of the activator site is lowered. copyright 1997 American Institute of Physics.

British Library Electronic Table of Contents (United Kingdom)

This paper studies the electrical characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) under flat and bending situations after AC/DC stress at different temperatures. Stress temperature was varied from 77K to 400K, and threshold voltage shifts were extracted to analyze degradation mechanisms. It was found that high temperature and mechanical bending played important roles under AC stress, with an enhanced stress effect resulting in a more serious degradation. This study also discusses the dependence between the accumulated sum of bias rising and falling time and the threshold voltage shifts under AC stress.

CERN Document Server

Classic and recent results for gauge effects on the properties of the normal-to-superconducting phase transition in bulk and thin film superconductors are reviewed. Similar problems in the description of other natural systems (liquid crystals, quantum field theory, early universe) are also discussed. The relatively strong gauge effects on the fluctuations of the ordering field at low spatial dimensionality D and, in particular, in thin (quasi-2D) films are considered in details. A special attention is paid to the fluctuations of the gauge field. It is shown that the mechanism in which these gauge fluctuations affect on the order of the phase transition and other phase transition properties varies with the variation of the spatial dimensionality D. The problem for the experimental confirmation of the theoretical predictions about the order of the phase transitions in gauge systems is discussed.

International Nuclear Information System (INIS)

The performance of scanning driver circuits fabricated with self-aligned aluminum gate polysilicon thin-film transistors (TFT's) is demonstrated. After the gate electrode patterning, the fabrication process temperature is kept below 400degC to enable the use of aluminum gate electrodes. The low-temperature crystallization phenomenon, which occurs when protons are implanted simultaneously with boron or phosphorus dopants, is employed to eliminate the 600degC activation-annealing process. A maximum clock frequency of about 2.0 MHz is achieved when the driver operating voltage is 24 V and the TFT channel length is 12 #mu#m. (author).

Energy Technology Data Exchange (ETDEWEB)

The effect of asymmetry tilt angle ion implantation on polysilicon thin-film transistors (TFTs) device characteristics are investigated. This asymmetric source/drain (S/D) TFTs structure exhibits low leakage current and suppressed kink effect due to the relief of higher electric field near the drain junction side. It is shown that the optimal implantation tilt angle is 30 deg. in our annealing condition. And the anomalous off-state current is more than two orders of magnitude lower than that of the conventional TFTs. By well controlled the LDD region, this structure can act as a conventional structure in the on-state and the turn-on current will not be degraded. Besides, the device under severe hot carrier bias stress shows better hot carrier endurance.

Energy Technology Data Exchange (ETDEWEB)

From optical point of view and due to the magnetic interaction of the cold neutrons with the unpaired electron shell, magnetic materials hae a neutron spin-dependent refractive index n[sup +] [spin up] and n[sup -] [spin down]. Magnetic media such as Fe, Co and Ni react like birefringent uniaxial crystals in ordinary optica. n[sup +] and n[sup -] are the equivalent of the ordinary and extraordinary refractive indices. The specular reflection of spin polarized neutrons which is due to the discontinuity of the magnetic induction at the surface of the ferromagnet is a sensitive probe of surface and interface magnetism. We shall first give the background of the art of polarized neutron optics. Secondly, some recent examples from surface and interface magnetism will be given to illustrate the power of this technique such as the magnetic coupling in thin films and multilayers and flux penetration in superconductors. (orig.).

Energy Technology Data Exchange (ETDEWEB)

In this work, we investigated self-heating related instability in polysilicon thin film transistors (poly-Si TFTs) fabricated on polyimide (PI) substrates. Indeed, when Joule heating becomes relevant, the temperature of the active layer can substantially rise, since the devices are fabricated on thermally insulating substrates. As a result, electrical instability is triggered and attributed to the generation of interface states, due to the Si-H bond breaking, and charge trapping into the gate insulator. In addition, by using 3-dimensional numerical simulations, coupling the thermodynamic and transport models, we analyzed the temperature distribution of the device under operating conditions and found that self-heating is more severe for devices fabricated on plastic substrates.

Energy Technology Data Exchange (ETDEWEB)

Polysilicon thin-film technology has become of great interest due to the demand for large area electronic devices. Active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting displays (AMOLEDs) are among the fields where polysilicon thin-film transistors (poly-Si TFTs) are most commonly used. Such devices, generally, require analog signal processing. This fact makes the performance of basic analog blocks, such as current mirrors implemented with poly-Si TFTs, crucial. This paper examines the performance of various current mirror designs through simulation. Finally, a novel design of a current mirror is proposed aimed to be used in low voltage applications.

International Nuclear Information System (INIS)

In this work, ?-SnS2 thin films have been prepared on glass substrates by the spray pyrolysis technique using an alcohol solution which contains tin chloride (SnCl4) and thiourea (SC(NH2)2) as precursors. The structural study shows that ?-SnS2 thin film prepared using optimal experimental conditions: substrate temperature Ts = 280 deg. C and the concentration ratio of sulfur and tin elements in the spray solution x = [S]/[Sn] = 2.5, crystallizes in the hexagonal phase with a strong (0 0 1) X-ray diffraction line. In the same way, microprobe analyses (EPMA) as well as X-ray photoelectron spectroscopy (XPS) show the presence of undiserable phase of SnO2. From the transmission and reflectance spectra, the band gap energy is 2.65 eV. On the other hand, the photothermal properties of such films have been studied, the thermal conductivity was Kc = 0.85 W m-1 K-1 and the thermal ...

International Nuclear Information System (INIS)

Nonevaporable getters (NEGs) have been extensively studied in the last several years for their sorption properties toward many gases. In particular, an innovative alloy as a thin film by magnetron sputtering was developed and characterized at the European Organization for Nuclear Research. It is composed of Ti-Zr-V and protected by an overlayer of palladium (Pd), according to a technology for which the authors got the licence. NEG-Pd thin films used in combination with ion getter pumps is a simple, easy way to handle pumping devices for ultrahigh and extremely high vacuum applications. To show how to apply this coating technology to the internal surface of different types of ion pumps, the authors carried out several tests on pumps of various shapes, sizes (in terms of nominal pumping speed), and types (diode, noble diode, and triode). Special care was taken during the thermal cycle of baking and ...

Energy Technology Data Exchange (ETDEWEB)

A technique and a particular apparatus for an inductive measurement of critical currents as a function of temperature and magnetic field in thin-film superconductors are described. The technique has been found to be particularly useful for high-field A-15 compounds 2 to 3 ..mu..m thick. Samples with lower critical current densities would have to be correspondingly thicker to measure over the same broad range of temperature and field. The design of the apparatus is detailed showing that the film can be taken directly from the deposition chamber and mounted without electrical contacts so samples can be changed easily. The principles of operation are developed based on the Critical State Model. These principles are tested by measurements which verify that the measured value of critical curent is independent of the amplitudes and frequency of the small ac magnetic field which is added to a much larger quasistatic field. The inductive measurements ...

Energy Technology Data Exchange (ETDEWEB)

Organic electronic devices using a pentacene have improved importantly in the last several years. We fabricated pentacene organic thin-film transistors (OTFTs) with dielectric SiO{sub 2} and ferroelectric Pb(Zr{sub 0.3},Ti{sub 0.7})O{sub 3} (PZT) gate insulators. The organic devices using SiO{sub 2} and PZT films had the field-effect mobility of approximately 0.1 and 0.004 cm{sup 2}/V s, respectively. The drain current in the transfer curve of pentacene/PZT transistors showed a hysteresis behavior originated in a ferroelectric polarization switching. In order to investigate the polarization effect of PZT gate dielectrics in a logic circuit, the simple voltage inverter using SiO{sub 2} and PZT films was fabricated and measured by an output-input measurement. The gain of inverter at the poling-down state was approximately 7.2 and it was three times larger than the value measured at the poling-up state.

International Nuclear Information System (INIS)

In this work we investigate an iron oxide thin film grown with atomic layer deposition for a gas sensor application. The objective is to characterize the structural, chemical, and electrical properties of the film, and to demonstrate its gas-sensitivity. The obtained scanning electron microscopy and atomic force microscopy results indicate that the film has a granular structure and that it has grown mainly on the glass substrate leaving the platinum electrodes uncovered. X-ray diffraction results show that iron oxide is in the #alpha#-Fe_2O_3 (hematite) phase. X-ray photoelectron spectra recorded at elevated temperature imply that the surface iron is mainly in the Fe"3"+ state and that oxygen has two chemical states: one corresponding to the lattice oxygen and the other to adsorbed oxygen species. Electric conductivity has an activation energy of 0.3-0.5 eV and almost Ohmic current-voltage dependency. ...

Science.gov (United States)

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a ...

Energy Technology Data Exchange (ETDEWEB)

The lithium-polymer energy storage technology requires the production of thin films of huge surface. The BT-EdF-CEA consortium has studied the various manufacturing techniques of these films and their assembly. The process was chosen according to its productivity, low expensiveness, ecological impact and energy performances with capacities reaching 40 Ah. This paper explains: the objectives and specifications of the project, the advantage of the consortium and the role of the different partners, the results (coating, dry extrusion and battery element manufacturing techniques), and the electrochemical performances of the elements. (J.S.)

International Nuclear Information System (INIS)

The use of a selective epitaxial growth technique for fabricating YBCO thin-film microstructures is described. No film post-deposition processing is required; hence damage to the structure is minimized. The technique is compatible with a passivation process to protect the structure without exposure to air. The microbridges, Josephson junctions and rf SQUIDs protected by an amorphous YBCO passivation have long lifetime even after severe accelerated aging tests. Rf SQUIDs fabricated by this technique show a significant reduction of low-frequency noise when operating in weak magnetic fields compared with SQUIDs fabricated by the conventional ion beam etching technique. (author)

International Nuclear Information System (INIS)

In one of the first uses of high Tc superconductors in an end-use product, Lake Shore Cryotronics and a Swiss lab have developed a liquid nitrogen level sensor using a high Tc thin film. The probe is manufactured using a seamless stainless steel tube with an yttrium-based zirconium oxide flame-sprayed on the tube. A plasma-sprayed superconductor compound is deposited on top of that. The probe is coated with a sealant that protects the superconducting film from the atmosphere. This manufacturing method has yielded an extremely durable product. Unaffected by ice formation and related mechanical problems, the superconducting level sensor can be kept in the dewar for long periods of time.

Energy Technology Data Exchange (ETDEWEB)

Langmuir-Blodgett films have been made with 3-n-hexadecylpyrrole and 3-n-octadecylpyrrole monomers and copolymers with unsubstituted pyrrole made by chemical polymerization at the air-water interface on a subphase containing FeCl/sub 3/. Langmuir-Blodgett films consisting of mixtures of stearic acid and alkylsubstituted polythiophenes have also been made as bilayer films. The orientation of single and multilayer films on platinum substrates have been studied by Near Edge X-ray Absorption Fine Structure Spectroscopy which also gives information about charge transfer interactions between the aromatic groups and the metallic substrates. The alkylsubstituted pyrroles form highly ordered two-dimensional structures. FeCl/sub 3/ initiated copolymerization with unsubstituted pyrrole leads to a more disordered system. In the case of polythiophene-stearic acid bilayers, the stearic acid layers are highly ordered. ...

Energy Technology Data Exchange (ETDEWEB)

Lithium (Li) plating-stripping reaction properties at the lithium phosphorus oxynitride glass electrolyte (LiPON)/copper thin film (Cu) interface is improved by the insertion of nano-thickness platinum (Pt) layer at the interface. The LiPON films are formed on mirror-polished lithium-ion conductive solid electrolyte sheets, and current collector thin films of Li, Cu-Pt multi layer, and Cu are formed on the LiPON films. The plating-stripping reactions at the LiPON/current collector films interface are carried out by galvanostatic and potential sweep measurements. Galvanostatic measurements reveal that Pt layer insertion reduces the overvoltage of the reaction and improves its coulomb efficiency. Also, cyclic voltammetry measurement suggests formation of Li-Pt alloys at higher voltages than 0 V (vs. Li/Li{sup +}) during the lithium plating ...

Energy Technology Data Exchange (ETDEWEB)

Low residual stress silicon oxynitride thin films are investigated for use as a replacement for silicon dioxide (SiO{sub 2}) as sacrificial layer in surface micromachined microelectrical-mechanical systems (MEMS). It is observed that the level of residual stress in oxynitrides is a function of the nitrogen content in the film. MEMS film stacks are prepared using both SiO{sub 2} and oxynitride sacrificial layers. Wafer bow measurements indicate that wafers processed with oxynitride release layers are significantly flatter. Polycrystalline Si (poly-Si) cantilevers fabricated under the same conditions are observed to be flatter when processed with oxynitride rather than SiO{sub 2} sacrificial layers. These results are attributed to the lower post-processing residual stress of oxynitride compared to SiO{sub 2} and reduced thermal mismatch to poly-Si.

Energy Technology Data Exchange (ETDEWEB)

The work in the past year has primarily involved four areas of magnetic thin films: amorphous rare earth-transition metal alloys, epitaxial CoPt{sub 3} and Ni-Pt alloy thin films, amorphous rare earth doped Si (a new class of dilute magnetic semiconductor with large negative magnetoresistance which the authors have discovered), and exchange-coupled antiferromagnetic insulators. In the amorphous alloys, they made a systematic study of the effects of local anisotropy, macroscopic (perpendicular) anisotropy, and exchange constant on the fundamental (and practical) properties of these magnetic alloys, as originally described in the grant proposal. The work on the epitaxial Co-Pt (and more recently Ni-Pt) alloys was originally undertaken as a comparison study to the amorphous alloys. Crystalline Co-Pt alloys have many striking similarities to the amorphous rare earth-transition metal alloys: perpendicular ...

Energy Technology Data Exchange (ETDEWEB)

Superconducting thin film particle detectors can be very attractive due to the low sensitivity to radiation damage. We describe the fabrication procedure and the characterization of Nb/Al bilayers as particle detectors. First steady and dynamical results are reported from tests of 5 MeV alpha-particle detection.

Energy Technology Data Exchange (ETDEWEB)

In a slurry explosive, the fine droplets of the aqueous phase are dispersed in a continuous oily phase which comprises a thin film surrounding each droplet, the latter being less than one micron in size. The authors present these commercial explosives in three different forms, indicate their explosive properties and discuss their advantages from the safety viewpoint. They also report on tests undertaken with slurry explosives in quarries possessing different types of rock and using deep vertical shotholes.

Science.gov (United States)

Partial Contents: Ternary Compounds; Granular Superconductors; Superconductivity in (SN)x and its Halogen Derivative (SNBr0.4)x; Studies of cuCl at Elevated Pressures; Superconducting Properties of Hydride Systems; Thin Film Superconducting Materials Research; Synthesis of Superconducting Nb3Si using High Pressures; Synthesis of Unstable A-15 Compounds by Epitaxial Recrystallization of Ion Implanted Layers; and Sputtering of Nb3Si.

Energy Technology Data Exchange (ETDEWEB)

Laser direct-write etching of the refractory metals Mo and W was developed using reactions in chlorine and nitrogen trifluoride vapors. Rate and high spatial resolution are simultaneously optimized using a two-vapor halogenation/development sequence, based on surface modification. Local-area laser chlorination of the metal surface is used to predispose areas to subsequent bulk etching.

International Nuclear Information System (INIS)

The influence of MeV electrons irradiation on the gate oxide layers of hydrogenated polysilicon thin film transistors (TFTs) was investigated by measuring gate leakage currents and threshold voltages. The experimental data revealed a decrease of oxide trap density and increase of positive oxide charge. Improvement in the interface roughness and in the oxide quality near the bottom interface was observed.

Energy Technology Data Exchange (ETDEWEB)

In this paper, aluminium nitride synthesis is carried out by direct laser irradiation onto an aluminium target surface in a nitrogen containing atmosphere. The influence of various processing parameters on the microstructure of AlN thin films is investigated in order to improve their tribological properties. The main microstructural characteristics: nature, concentration, in depth distribution and morphology of various phases are studied versus processing parameters by TEM and GIXD. (author). 2 refs., 1 fig., 2 photos.

Energy Technology Data Exchange (ETDEWEB)

A) diffuse bilayer, B) spontaneously formed multilayer, and C) vertically homogenous thin films, are fabricated. The photocurrent/voltage performance is compared and it is found that the self-stratified structure (B) yields the highest energy conversion efficiency. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

Science.gov (United States)

For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of increasing the flow rate ...

Energy Technology Data Exchange (ETDEWEB)

In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C{sub 3}H{sub 8}O), water (H{sub 2}O) and zinc acetate (Z{sub n}(CH{sub 3}CO{sub 2}){sub 2}) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain ...

Energy Technology Data Exchange (ETDEWEB)

A method for detecting electrons emitted as secondary particles by photon incidence to a specimen, as well as a method of using the photons emitted by electron incidence as detecting particles are explained. Pd-Si(100)2{times}1 system is adopted for a case study of using photo-electron spectroscopy where synchrotron emitted light in soft X-ray region is used as the incident light. Pd atoms are deposited little by little on clean Si surface to investigate the electron structure of the surface, and the interface electron structure after bonded formation of Pd(thin film)-Si(substrate) is estimated. Radiation soft X-ray spectroscopy is employed to observe the real state of the bonded interface of Pd(thin film)-Si(substrate) prepared by depositing Pd film in a short period of time. In the case of radiation soft X-ray spectroscopy with electron beam excitation, bonded system of ...

CERN Document Server

Non-evaporable thin film getters of various compositions have been produced by sputtering. Among about 20 materials which have been studied, the lowest activation temperature (about 180 degree C) has been displayed by a Ti-Zr-V coating obtained from a cathode made of intertwisted elemental wires. In order to optimize the vacuum properties of this film various production parameters, including the substrate temperature during coating, have been varied. The films have been characterized by pumping speed measurement, secondary electron microscopy, and X-ray diffraction. It has been found that the substrate coating temperature affects significantly the activation temperature, the pumping speed and the gas surface capacity. The highest pumping speed values, obtained for substrate coating temperatures of 250 degree C and 300 degree C, are clearly correlated with the increased surface roughness and porosity of ...

Science.gov (United States)

A facile solution chemistry is demonstrated to fabricate high-quality polycrystalline strontium ruthenium oxide (SrRuO{sub 3}) thin film electrodes on silicon substrates suppressing the formation of undesired ruthenium oxide (RuO{sub 2}) for the deposition of dielectric and ferroelectric materials like lead lanthanum zirconate titanate (PLZT). The robust, highly crystalline SrRuO{sub 3} film fabrication process does not favor the formation of RuO{sub 2} because of molecular level modification of the precursors possessing analogous melting points, yielding homogeneous films. This chemistry is further understood and complemented by kinetic and thermodynamic analysis of the DTA data under nonisothermal conditions, with which the activation energies to form RuO{sub 2} and SrRuO{sub 3} were calculated to be 156 {+-} 17 and 96 {+-} 10 kJ/mol, respectively. The room-temperature resistivity of the SrRuO{sub 3} ...

Energy Technology Data Exchange (ETDEWEB)

As a result of health and safety issues surrounding the use of radioactive materials on coated optical components, there has been renewed interest in coating materials whose optical and mechanical properties approach those offered by their radioactive counterparts. Due to the radioactive nature of ThF{sub 4} and its widespread use in optical coatings, the coating industry is examining other low index and non-radioactive fluorides as possible alternatives. In this paper, the authors present the results of an experimental study on the optical and mechanical properties of thermally evaporated ThF{sub 4}, DyF{sub 3}, CeF{sub 3}, LiF, HfF{sub 4}, IRX, and IRB thin films, where the materials were deposited at different substrate temperatures. The objective is to examine this series of fluorides under comparable deposition conditions and with respect to such material properties as: n and k, film stress, and environmental ...

Energy Technology Data Exchange (ETDEWEB)

The effective electron mobility was measured as a function of surface field in polysilicon thin film transistors having the following three types of gate dielectrics; silicon dioxide deposited by low temperature (350degC) plasma-enhanced chemical vapor deposition (PECVD), low temperature (400degC) nitrogen-rich PECVD silicon nitride and high temperature (1050degC) thermally grown silicon dioxide. At low surface fields, the maximum true effective electron mobility was 40[+-]3 cm[sup 2] V[sup -1] s[sup -1] in all devices independent of the type of gate dielectric, indicating that the quality of the interface is the same. However, at high surface fields a stronger degradation of the mobility was observed in devices having the thermally grown silicon dioxide as gate dielectric, indicating the presence of surface roughness within the interfacial region. The polysilicon structure was studied by transmission electron microscopy in order to ensure that ...

International Nuclear Information System (INIS)

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO_2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide ...

Energy Technology Data Exchange (ETDEWEB)

This paper reports on superconductor-semiconductor-superconductor (S-N-S) weak-link junctions with the normal layer of Si or InSb thin films were prepared by using focused ion beam (FIB), and electrical properties were measured. Whereas InSb thin films on single crystals did not have an intrinsic mobility, S-N-S junction with InSb shows the characteristics of Josephson S-N-S junction. A 200nm-thick film of InSb deposited on MgO had a mobility of 83 cm{sup 2}.V {center dot} s and a carrier density of 6.5 {times} 10{sup 17} cm{sup {minus}3} at 4.2K. The coherence length {xi}{sub n} was computed to be 17 nm from these experimental data, and we obtained critical superconducting current Ic of 100 {mu} A for the S-N-S junction which had a line width of 10{mu} m and a channel length of 20 nm.

Energy Technology Data Exchange (ETDEWEB)

The passive films formed in stainless steels are thin and fine oxide films, a high corrosion resistance can be provided by these films. This study formed SiO2 protective coating on the substrate of SUS 304 stainless steels by chemical vapor deposition using TEOS-O3 system. Firstly, relations of substrate temperature and deposition rate of films, chemical composition, refractive index of films were investigated. Then, the corrosion resistance of SUS 304 stainless steels coated SiO2 films was examined by activation time and an anodic polarization curve in 1 kmol[center dot]m[sup -3] HCl solution. The results were obtained as follows. Thickness of SiO2 films linearly increases with time at the deposition temperature of 473 to 673 K. Si-OH bonds would disappear above the deposition temperature of 573 K, almost perfect SiO2 ...

International Nuclear Information System (INIS)

Complimentary spectroscopic, microscopic and electrochemical studies were performed to characterise the barrier properties as well as the interface structure of model iron substrates covered with thin plasma polymer films. Cathodic plasma polymers were deposited which show high barrier properties. The metal surface was pre-treated by a reducing or oxidising plasma. This allowed the adjustment of the oxidation state of the interface layer. The interface structure was characterised by means of X-ray photoelectron sputter profiles, infrared spectroscopy and the application of a Kelvin probe. The investigations show that the measured Voltapotential on the plasma polymer surface can be correlated with the oxidation state of the interface. Reducing plasmas lead to an almost oxide free surface. After deposition of the plasma polymer, this reduced state of the oxide is sensitive to re-oxidation of the interface by oxygen that diffuses through the ...

Energy Technology Data Exchange (ETDEWEB)

The corrosion properties of sputtered molybdenum and molybdenum silicide films in hydrochloric acid (HCl) have been studied by means of potentiodynamic measurements. Contributions from the substrate to the corrosion behaviour was avoided by depositing the films on inert aluminium oxide (Al{sub 2}O{sub 3}). The compositions studied were Mo, MoSi{sub 0.58}, MoSi{sub 1.04}, MoSi{sub 1.4} and MoSi{sub 1.9-2.1}. Characterisation of the samples was made by X-ray diffraction (XRD) and scanning electron microscopy (SEM) before and after corrosion. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to analyse the polarised films. Corrosion of Mo{sub 3}Si was found in the molybdenum-rich samples (MoSi{sub 0.58}) containing the two phases Mo{sub 3}Si and Mo{sub 5}Si{sub 3}. Polarisation curves for these films showed one passivation peak at 228 mV vs. the saturated calomel ...

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We describe a new method for the scabbling of concrete surfaces using a thin layer of explosive material sprayed onto the surfaces. We also developed a new explosive mixture that could be applied with commercial spray painting equipment. The first part of our record describes experiments that studied methods for the initiation of the sprayed explosive. We successfully initiated layers 0.36 mm thick using a commercial EBW detonator, a flying plate detonator, and by pellet impact. The second part of our report describes a survey of spray methods and tests with two commercial spray systems that we believe could be used for developing a robotic spray system.

Energy Technology Data Exchange (ETDEWEB)

We tried to apply a quartz crystal as a sensor by using the resonant frequency and the resistance properties of quartz crystals. Four kinds of fatty acids that have the same head groups were coated on the surfaces of the quartz crystals, and the shift of the resonant frequency and the resistance were observed based on the lengths of the tail groups. Myristic acid (C{sub 14}), palmitic acid (C{sub 16}), stearic acid (C{sub 18}), and arachidic acid (C{sub 20}) were deposited on the surfaces of quartz crystals by using the Langmuir-Blodgett (LB) method. As a result, the resonant frequency change was more sensitive to high molecular-weight fatty acids than to low molecular-weight ones. We also observed the effect of temperature on stearic acid LB films, and the response properties of quartz crystals coated with stearic-acid LB films to organic gases were investigated. As a result, the sensitivity of quartz crystals to organic gases was higher for ...

Energy Technology Data Exchange (ETDEWEB)

Chloride-induced pitting corrosion of stainless steel (Materials No. 1.4301 and 1.4571) was investigated with the aid of chronopotentiostatic tests. Oxide films upon the surface (temper colours), addition of inhibitors (sulphate and nitrate) and temperature were the testing variables. Two different critical pitting potentials have been found, which give information on the potential ranges for stable passivity, latent and stable pitting corrosion. The results only indicate a small effect of Mo content of the material and test temperature. The inhibitors (sulphate and nitrate) have a marked effect. Specimens with a clean surface produced by pickling are markedly more resistant against pitting corrosion than specimens with a yellow temper colour, whereas the difference in corrosion resistance between yellow and blue films is relatively small. The width of the critical potential range for pitting corrosion generally increases with increasing oxide ...

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

Energy Technology Data Exchange (ETDEWEB)

ZnO thin films were electrodeposited in aqueous solution on gilded p-type Si wafer substrates. Thermal treatments were carried out on different films in Ar atmosphere at different temperatures, between 200 and 600 {sup 0}C. Surface morphology studies using scanning electron microscopy and atomic force microscopy show a smooth surface for an annealing temperature of 400 {sup 0}C with a roughness mean square value of about 15 nm and a precipitation of ZnO microcrystals on the deposit surface at 600 {sup 0}C. X-ray diffraction experiments reveal a decrease in the c-parameter value from 5.223 to 5.206 A after treatment at 600 {sup 0}C, due to the removal of hydrogen from the film. Raman spectroscopy analyses show an improvement in the crystal quality of the film and a decrease in the compressive stress inside the deposit. Photoluminescence observations reveal an important change in the ...

Energy Technology Data Exchange (ETDEWEB)

Cathodic arc deposition is an established and industrially applied technique for the formation of nitrides (e.g. TiN); it can also be used for metal oxide thin film formation. A cathodic arc plasma source with the desired cathode material is operated in an oxygen atmosphere of appropriate pressure, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on accelerator components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized ...

Energy Technology Data Exchange (ETDEWEB)

The design of a reaction cell which permits the investigation of the sorption kinetics of microcomponents without separation of the phases under automated condition has been described. The use of thin-layer inorganic sorbents obtained by depositing films of a sorbing substance from aqueous solutions on flat substrates of small thickness makes it possible to determine the extent of sorption even at small values in the case of /beta/ emitters with a low energy and /alpha/ emitters. Detailed observation of the kinetics of isotopic exchange in the CdS-/sup 115m/Cd-HNO/sub 3/ system has made it possible to reveal at least four stages in the process during the time of observation.

Energy Technology Data Exchange (ETDEWEB)

We compare the effect of isotropic point defects vis a vis extended defects on the inter and intra grain properties of superconducting MgB{sub 2} thin films. In a recent paper Gandikota et al. [Appl. Phys. Lett. 86 (2005) 012508] reported that after 200 MeV {alpha} particle irradiation intergrain connectivity remains unaffected. Our results on the contrary indicate that connectivity does depend on irradiation dose and type of ions used. We ascertain that extended defects alter the {sigma} band properties of this two-band superconductor more effectively than the point defects. The improvement in upper critical field and critical current density is intricately related to the type and density of defects created.

Energy Technology Data Exchange (ETDEWEB)

A 15-nm lithium fluoride (LiF) thin film evaporated on glass substrate is shown to enhance the nucleation of microcrystalline Si grown by plasma enhanced chemical vapour deposition at the amorphous/microcrystalline boundary conditions. The effect is more pronounced at low substrate temperatures, nucleation density being 10 times higher at {approx} 80 {sup o}C. The effect is ascribed to the ionic chemical nature of LiF, the low work function material used in organic electronic devices, and we propose its use for micro patterning crystalline Si regions in otherwise amorphous Si film.

Energy Technology Data Exchange (ETDEWEB)

The deterioration of AA2024, AA6061 and AA7475 anodised in an environmentally-compliant tartaric acid/sulphuric acid electrolyte has been examined as a function of the immersion time in the electrolyte after termination of anodising. By transmission electron microscopy and scanning electron microscopy, degradation of the porous oxide film was qualitatively observed on AA2024. Electrochemical impedance spectroscopy revealed that AA2024 and AA7075 were more sensitive to prolonged immersion in the anodising electrolyte compared with AA6061, due to increased barrier layer thinning rates and increased susceptibility to localized corrosion. Salt spray tests confirmed the previous, indicating decay of anticorrosion performance for AA2024 and AA7075.

British Library Electronic Table of Contents (United Kingdom)

The electrical characteristics of thin TiO2 films prepared by metal?organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO2 film of 4.7?nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8?10?2 and 1.1?10?4?A/cm2 at +2 V bias and 1.6?10?1 and 8.3?10?4?A/cm2 at ?2?V bias. The lower leakage currents of TiO2 with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5?1013?cm2, respectively. The lowest mid-gap interface state density is around 7.6?1011?cm?2?eV?1. The equivalent oxide thickness is 0.52?nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6?nm and reaches 9.3?MV/cm at 2.5?n...