International Nuclear Information System (INIS)

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with room-temperature hole ...

Energy Technology Data Exchange (ETDEWEB)

The strain gradient crystal plasticity theory is applied to study the deformation of planar single crystal with a void under a nominally uniaxial tension. The crystal theory assumes elevated strain hardening due to slip gradients and has a constitutive length scale. The effects of the void size with respect to the constitutive length scale on the single crystal deformation are investigated.

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

British Library Electronic Table of Contents (United Kingdom)

Single crystals of ytterbium tartrate trihydrate have been grown by gel method using silica and agar-agar gels as media of growth. The medium of growth influences the morphology of grown crystals, silica gel yielding single and polycrystalline in the form of spherulites whereas agar-agar gel leading to growth of single and twinned crystals. Materials grown as single crystals have been characterized by using optical and scanning electron microscopy (SEM), EDAX, XRD, FT-IR, CHN and thermogravimetric techniques. The stoichiometry of the grown single crystals is suggested to be Yb(C4H4O6) (C4H5O6).3H2O. The FT-IR spectrum shows the presence of singly as well as doubly ionized tartrate ligands. Results of thermal analysis indicate that the material is thermally ...

Science.gov (United States)

... pulses by a 50/50 beamsplitter and recombined in space and in time inside a wafer of KDP crystal which generates a second harmonic of the ...

Science.gov (United States)

A high degree of structural perfection is an essential requirement for CdTe crystals used as substrates for the epitaxial growth of CdHgTe alloys. Here, a method for the evaluation of the structural perfection of CdTe crystals is proposed which is based on X-ray diffraction measurements using both two-crystal and three-crystal diffractometers (differential version). The method makes it possible to obtain more information on structural perfection both at the crystal surface and within the crystal body.

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Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.

International Nuclear Information System (INIS)

The energy levels scheme of octahedrally coordinated Ni2+ ion in single crystal, powder nano-single crystal, ceramics and glass-ceramics of MgGa2O4 host matrix, has been calculated in the exchange charge model of crystal field. The parameters of the crystal field acting on the Ni2+ ion are calculated from the crystal structure data, after optimization of the geometry of the system. The energy level schemes have been calculated by diagonalization of the crystal field Hamiltonian of this system. The obtained results were compared with experimental data; a good agreement were demonstrated, which confirm the validity of the model and used method.

UK PubMed Central (United Kingdom)

An unusual S1-nuclease sensitive microsatellite (STMS) has been found in the single copy, rat polymeric immunoglobulin receptor gene (PIGR) terminal exon. In Fisher rats, elements within or beyond the...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

International Nuclear Information System (INIS)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change ...

International Nuclear Information System (INIS)

... magnetic susceptibility magnetization monocrystals neutron diffraction

Science.gov (United States)

telluride single crystals. NASA Center: NASA (Unspecified Center) Publication Year: 1966. Document ID: 19670033153. Accession Number: 67A11882 ...

Science.gov (United States)

... Abstract : Single crystals of Pb(x)Sn(1-x)Te alloy have been grown with o = or thin film evaporator. ...

Energy Technology Data Exchange (ETDEWEB)

Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the polymorphs'' of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes worm holes'' in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100[degrees]C lock in the mechanical twins.

Science.gov (United States)

A general account of the properties, growing technology and annealing of lead-tin-telluride single crystals is given. Photoconductors were made for the 8 to 14 micron. spectral range and responsivity, detectivity and spectral response measurements showed satisfactory results. Improvement in the growing and annealing of the single crystals promise good performance in the near future.

Energy Technology Data Exchange (ETDEWEB)

The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).

Energy Technology Data Exchange (ETDEWEB)

White beam Laue micro-diffraction was performed on directionally solidified, single-crystal Mo pillars in the as-grown state, after focused ion beam (FIB) milling and after pre-straining. The Laue diffraction peaks from the as-grown pillars are very sharp and show no broadening, similar to those from single-crystal Si wafers. Significant broadening and streaking of the peaks occurred after FIB milling and pre-straining, indicative of the damage these treatments induce in the nearly perfect crystal structure of the directionally solidified Mo pillars.

International Nuclear Information System (INIS)

Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 A within 3000 A wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier-carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in InGaAs but may be due to stimulated emission in InGaAsN. The results reveal that the ...

International Nuclear Information System (INIS)

The present communication deals with the synthesis, single crystal growth and characterization of a new nonlinear optical material L-proline strontium chloride monohydrate (L-PSCM). Single crystals have been grown using the slow solvent evaporation technique. Single crystal XRD analysis confirmed that the crystal belongs to the orthorhombic structure with lattice parameter a=6.6966(3) A, b=12.4530(5) A, c=15.2432(5) A and space group P2_12_12_1. Presence of various functional groups in L-PSCM and protonation of the ions were confirmed by Fourier transform infrared spectroscopy (FT-IR) analysis. The melting point of the single crystal was found to be 126 "oC using DSC. Ultraviolet-visible spectral analyses showed that the crystal has low UV cut-off at 226 nm combined with very ...

Energy Technology Data Exchange (ETDEWEB)

We report the experimental and theoretical results on the anisotropies in the magnetic properties and x-ray absorption spectra of single-crystal LiFePO4. A mean-field theory is developed to explain the observed strong anisotropies in Lande g-factor, paramagnetic Curie temperature, and effective moment for LiFePO4 single crystals. The values of the in-plane nearest- and next-nearest-neighbor spin exchange (J1 and J2), interplane spin exchange (J{perpendicular}), and single-ion anisotropy (D), obtained recently from neutron scattering measurements, are used for calculating the Curie temperatures with the formulas derived from the mean-field Hamiltonian. It is found that the calculated Curie temperatures match well with that obtained by fitting the magnetic susceptibility curves to the modified Curie-Weiss law. For the polarized Fe K-edge x-ray absorption spectra of single-crystal ...

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We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

International Nuclear Information System (INIS)

Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 #mu#m was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence ...

Science.gov (United States)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al{sub {ital x}}Ga{sub 1{minus}{ital x}}InP{sub 2}; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. {copyright} {ital 1996 The American Physical Society.}

Energy Technology Data Exchange (ETDEWEB)

To improve organic electronic applications, knowledge about microscopic mechanisms determining the charge carrier mobilities is pivotal. 9,10-Diphenylanthracene (DPA) has been identified as model system to study those correlations due to its high electron and hole mobilities at room temperature and its complex structural phase behaviour. We demonstrate our temperature dependent Time-Of-Flight data on single crystals grown by vapor phase transport (VPT) and by Bridgman growth technique. Both preparation techniques revealed crystals of different morphologies resulting in significant variations of the related bipolar mobilities. As a key result, the charge carrier mobility of {proportional_to}1 cm{sup 2}/Vs at room temperature along the (111)-direction of Bridgman crystals exceeds that along the (001)-direction of VPT grown crystals by about one order of magnitude. The observed ...

Energy Technology Data Exchange (ETDEWEB)

Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.

Energy Technology Data Exchange (ETDEWEB)

The theoretical treatment of the relation between the critical angle of planar channeling and the characteristics of crystal lattice defects is carried out. The predictions are made about some typical forms of the critical angle dependence on the mean-square static displacement produced by defects, and then these predictions are detailed for the cases of homogeneous disordering, spherical clusters of point defects and dislocation loops. Analytical results are supported by the exact computer calculations for the defects in the intermetallic A-15 compounds.

International Nuclear Information System (INIS)

The chemical properties of alloys in a given environment are to a large extent governed by the surface composition. Changes of the surface composition during passivation are important features in this respect. Previous studies of single crystal Ni-Mo alloys surfaces have been reported. The aim of this work was to obtain quantitative data, for the natural oxide and the passive films formed on Ni-6% Mo(100) and (110) alloys, using Rutherford backscattering spectroscopy and nuclear reaction analysis. (author).

Energy Technology Data Exchange (ETDEWEB)

Low cycle fatigue (LCF) of a fourth-generation single-crystal (SC) Ni-base superalloy TMS-138 was studied by comparison with a typical third-generation (TMS-75) and a second-generation (CMSX-4) Ni-base SC superalloys. TMS-138 exhibits improved LCF behaviour under a condition of the R ratio of 0 at temperatures of 1073 K and 1173 K. The addition of refractory elements resulted in a remarkable improvement of the LCF properties compared to those of the reference superalloys due to the different microstructure developed in TMS-138. (orig.)

International Nuclear Information System (INIS)

A complete electron paramagnetic resonance power pattern characterization of Fe"3"+ in cubic sites in presented. A one-to-one correspondence among the peaks appearing in the powder pattern and the outer fine-structure transitions (Mnot = 1/2 ) observed in the single crystal along the , , and directions is shown. It is shown that the process of mechanically grinding the single crystal to a powder (particle size approx.1--10 #mu#) does not remove the cubic symmetry sites. No axial or lower symmetry sites which may be induced by lattice distortion of the crystallites due to strain have been observed.

Science.gov (United States)

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

Energy Technology Data Exchange (ETDEWEB)

For several decades most of the efforts to develop new scintillator materials have concentrated on high-light-yield inorganic single-crystals while polycrystalline ceramic scintillators, since their inception in the early 1980 s, have received relatively little attention. Nevertheless, transparent ceramics offer a promising approach to the fabrication of relatively inexpensive scintillators via a simple mechanical compaction and annealing process that eliminates single-crystal growth. Until recently, commonly accepted concepts restricted the polycrystalline ceramic approach to materials exhibiting a cubic crystal structure. Here, we report our results on the development of two novel ceramic scintillators based on the non-cubic crystalline materials: Lu SiO:Ce (LSO:Ce) and LaBr:Ce. While no evidence for texturing has been found in their ceramic microstructures, our LSO:Ce ceramics exhibit a surprisingly high level of ...

International Nuclear Information System (INIS)

The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.

International Nuclear Information System (INIS)

The new nonlinear optical crystal Rb3V5O14 has been synthesized by solid state reaction and characterized by single-crystal X-ray diffraction, IR and thermogravimetric analysis. The crystal Rb3V5O14 crystallizes in the trigonal system with space P31m (No. 157), a=b=8.7134(12) A, c=5.2807(11) A and ?=90o, ?=90o, ?=120o, Z=1, ?=3.516 g/cm3. It is a layered structure that is very flat and strongly parallel to c. The V5O14 layer structure consists of corner-linked square and triangular pyramids. The layers are separated by Rb+ ions, which fit equally well on the V5O14 layer. The Kurtz powder SHG measurement, using 1064 nm radiation, showed that the second-harmonic generation efficiency of Rb3V5O14 is about two times that of KDP. -- Graphical abstract: The new nonlinear optical crystal Rb3V5O14 has been synthesized by solid state reaction and characterized by ...

Science.gov (United States)

The authors have determined quantitative characteristics for oxide films forming on (111) surfaces of cadmium telluride single crystals on anodic oxidation in 0.1 M KOH: the constants in the Guenterschulze-Betz equation and the film growth constant, which is 2.4 nm/V, from which the activation energy for cadmium telluride electrooxidation has been calculated.

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Short communication.

International Nuclear Information System (INIS)

Tl(InS_2)_1_-_x(FeSe_2)_x single crystals (where x=0; 0.001; 0.005; 0.01 and 0.015) were grown by the Bridgman-Stockbarger method. Obtained single crystals were crystallized in monoclinic structure. The present paper deals with experimental results relative to X-ray dosimetric characteristics of the Tl(InS_2)_1_-_x(FeSe_2)_x solid solutions at 300 K. Installation URS-55a was the source of radiation. X-ray radiation dose (E) falling on the crystals is measured by the crystalline X-ray dosimeter DRGZ-02. The value of X-ray conductivity coefficient K_#sigma# characterising X-ray sensitivity is defined as K_#sigma#= (#sigma#_E-#sigma#_0)/E#sigma#_0. where #sigma#_E is conductivity under the effect of X-ray radiation by intensity E, #sigma#_0 is conductivity in the lack of radiation. Comparing X-ray dosimetric characteristics of TlInS_2 and Tl(InS_2)_1_-_x(FeSe_2)_x ...

Energy Technology Data Exchange (ETDEWEB)

Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In/sub 1-//sub y/(Al/sub x/Ga/sub 1-//sub x/)/sub y/P-In/sub 1-//sub y/ (Al/sub x/Ga/sub 1-//sub x/)/sub y/P quantum well heterostructures grown lattice matched (yapprox. =0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (J/sub th/approx.10/sup 4/ A/cm/sup 2/, 625 nm) of diodes fabricated from the same crystal is described.

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

International Nuclear Information System (INIS)

Using standard microfabrication techniques, it is now possible to construct devices that appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date, the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high-frequency operation, have not been tested in detail. We present high-accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single ac-modulated gate at 340 MHz driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal ...

Energy Technology Data Exchange (ETDEWEB)

When a highly collimated beam of particles is aimed along the atomic rows of an aligned single crystal, the averaging effect of high speed motion results, to the lowest order of approximation, in crystal electric fields which are transverse to the atomic rows. The enormous magnitude of the crystal transverse electric fields is unsurpassed by any other known earth-bound macroscopic sources. For example, the field strengths along the <100> axis of tungsten at 77 K approach 9{center dot}10{sup 13}V/m. Thus quantum electrodynamic (QED) processes in strong fields which are thought to occur only in the extra-terrestrial environment can now be investigated in the laboratory. Here we review the results of measurements performed at the SPS facility in CERN using highly collimated beams of electrons, positrons and photons in the 20-200 GeV range, and germanium crystals cooled to 77 K ...

International Nuclear Information System (INIS)

An attempt has been made to grow L-tartaric acid nicotinamide (LTN); a complex of tartaric acid, by employing a modified unidirectional method. The crystalline structure and quality are investigated by single crystal XRD and rocking curve studies. The linear and nonlinear optical properties are studied by UV-vis-NIR spectral analysis, SHG test, phase matching and laser induced damage threshold measurement. For comparison, parallel growth of the crystal was carried out by conventional method and the properties of the LTN samples grown by the conventional and unidirectional methods are investigated. The mechanical, photoconductivity and dielectric behavior of LTN crystals are also investigated.

Energy Technology Data Exchange (ETDEWEB)

This paper attempts to explain the peculiarities of the radial-distribution function of metal glasses without involving ideas of the amorphous structure. On a computer, the radial atomic density for a spherical eutectic single crystal of the composition Fe/sub 84/C/sub 16/ of radius 15 A formed by alternating small crystals of e-Fe and Fe/sub 3/C of cubic form with the edge of the cube ca 10 A. For the sake of clarity, the diagram of such a quasisingle crystal is shown and has been given a cubic boundary. The change in the relationship between the heights of the subpeaks of the second maximum of the radial distribution function of atoms in the Fe-B glasses with a change in the concentration of boron can be explained by the change in the space group of the Fe/sub 3/B metastable boride which is formed in this system.

International Nuclear Information System (INIS)

Measurements are made on the principal magnetic susceptibilities and anisotropies of praseodymium selenate octahydrate single crystals in the temperature range 90 to 300 K. Although the effective magnetic moment is close to the free ion value, the anisotropy is quite high at room temperature. A least sequares fit of the Curie-Weiss law to the observed average susceptibility yields -36.5 K as the paramagnetic Curie temperature. An analysis of the results with a crystal field (CF) of D_4 symmetry, explains the observed results quite well. The CF and the spin-orbit interaction matrix is block diagonalized in the complete 33 dimensional basis of the "3H term in order to obtain the Stark energies and their eigenstates. Intermediate coupling effects are also considered. The ground state being a singlet, the g-factors are absent. Some predictions on the electronic heat capacity and the electronic quadrupole splitting are made in ...

Science.gov (United States)

Counting characteristics of X-ray detectors fabricated from indium-doped, gallium-doped, and chlorine-doped CdTe have been investigated. The detectors fabricated from indium-doped and gallium-doped crystals showed radiation-induced polarization, namely, a progressive decrease of count rate with an increase of photon fluence in the high-photon-fluence region, while the detectors fabricated from chlorine-doped crystals did not. Results from current-voltage characteristics of the detectors indicated that the different counting characteristics of these detectors originated from the difference in internal electric fields in each detector.

Energy Technology Data Exchange (ETDEWEB)

The energy dispersive beamline X6A at the National Synchrotron Light Source employs a curved crystal monochromator (polychromator) which focuses a range ([similar to]1 keV) of x-ray energies into a narrow (100--120 [mu]m) line image. Although this beamline was constructed primarily for time-dependent EXAFS experiments, we have begun to explore the use of this instrument for energy dispersive diffraction experiments with different types of sample including macromolecular crystals. The tunability ([ital E]=6.5 to 21 keV) and flexibility ([Delta][ital E]=100--1000 eV) of the instrument makes the beamline ideal as a test bed for the application of polychromatic single-crystal diffraction techniques to different chemical or biological materials.

International Nuclear Information System (INIS)

Precipitation-hardened single crystals of a beta (bcc) Ti--40 at. percent V--1.0 at. percent Si alloy were deformed in compression at 77 and 298"0K. The dependence of the yield stress upon aging time at 843"0K for solution-treated crystals shows two maxima which are caused by silicide precipitates. The orientation dependence of the yield stress and of the active macroscopic slip plane were determined as a function of aging time. The solution-treated as well as aged crystals exhibit an asymmetry of both the yield stress and the plane of slip, the degree of asymmetry being larger at 77 than at 298"0K. The asymmetry of slip and yielding is not affected by the presence of precipitation hardening. Results indicate that the effect of the dislocation core structure on dislocation motion is independent of the presence of precipitates. (auth).

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Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.

International Nuclear Information System (INIS)

The paramagnetic susceptibility of single crystals of dysprosium-yttirum alloys is measured in the basal plane and along the hexagonal axis. It is shown that the susceptibility of the alloys obeys the Curie-Weiss law, the effective magnetic moments allong the different directions being the same and the paramagnetic Curie temperatures being different. The difference between the paramagnetic Curie temperatures in the basal plane and along the hexagonal axis is independent of the dysprosium concentration in the alloy. As a comparison with the theoretical models of magnetic anisotropy shows, this is an indication that the magnetic anisotropy of dysprosium - yttrium alloys is of a single-ion nature.

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The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

International Nuclear Information System (INIS)

The nine title compounds were prepared from the elements by arc-melting and subsequent heat treatment in resistance and high-frequency furnaces. The crystal structure of these isotypic compounds was determined for YPdSi from single-crystal X-ray diffractometer data: Pmmn, a = 430.8(1) pm, b = 1391.2(1) pm, c = 743.1(1) pm, Z = 8, R = 0.024 for 417 structure factors and 40 variable parameters. The crystal structures of the isotypic compounds GdPdSi and ErPdSi were also refined from single-crystal data. The structure is of a new type. It consists of condensed, six-membered rings of alternating palladium and silicon atoms with Pd-Si bond distances varying between 249.6 and 258.8 pm. These two-dimensionally infinite nets are connected to each other via weak Pd-Si and Si-Si bonds with bond distances of 276.3 and 259.5 pm. The rare earth atoms are situated above and below the six-membered palladium-silicon ...

Energy Technology Data Exchange (ETDEWEB)

The magnetic properties of a single crystal of SmNiSn with the orthorhombic {epsilon}-TiNiSi-type crystal structure have been investigated by magnetic susceptibility, magnetization and electrical resistivity measurements from 1.5 K to room temperature. Two anomalies have been found in the magnetic susceptibility, indicating an antiferromagnetic phase transition at T{sub N}=9.4 K and a second transition at 4.4 K. A large magnetic anisotropy has been found at low temperatures in the temperature and field dependencies of magnetic susceptibility and magnetization. Below 80 K, the easy axis of the magnetization is the c-axis. At T=2.0 K, the c-axis magnetization curve exhibits metamagnetic-like behavior at H{sub c}=42 kOe and reaches 0.54 emu/g at H=55 kOe, whereas for the a- and b-axis the magnetization is linear and smaller. The paramagnetic susceptibilities do not follow the Curie-Weiss law suggesting a large van Vleck ...

Science.gov (United States)

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

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Primary dendrite spacings and side-branch coarsening kinetics were examined in specimens of the single-crystal multicomponent commercial superalloy PWA-1480, which were directionally solidified in a psoitive thermal gradient. The experimentally observed dependence of primary dendrite spacings and side-branch coarsening kinetics on growth rate and thermal gradient were in agreement with the behavior predicted by analytical models developed for binary alloys. (orig.).

CERN Document Server

Zinc molybdate (ZnMoO4) single crystals were grown for the first time by the Czochralski method and their luminescence was measured under X ray excitation in the temperature range 85-400 K. Properties of ZnMoO4 crystal as cryogenic low temperature scintillator were checked for the first time. Radioactive contamination of the ZnMoO4 crystal was estimated as <0.3 mBq/kg (228-Th) and 8 mBq/kg (226-Ra). Thanks to the simultaneous measurement of the scintillation light and the phonon signal, the alpha particles can be discriminated from the gamma/beta interactions, making this compound extremely promising for the search of neutrinoless Double Beta Decay of 100-Mo. We also report on the ability to discriminate the alpha-induced background without the light measurement, thanks to a different shape of the thermal signal that characterizes gamma/beta and alpha particle interactions.

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DC resistivity, dc magnetization, and specific heat of eight Sc/sub 5/Co/sub 4/Ge/sub 10/-type crystal structure compounds R/sub 5/T/sub 4/Ge/sub 10/ for R = Dy, Ho, Er, Tm, and T = Rh and Ir are presented. The resistivity, single crystal magnetization, and specific heat results show that in all those compounds, the magnetic moments order antiferromagnetically in the c direction at low temperature. However, in the Er and Tm compounds, the magnetizations along x-y hard directions do not show any anomalies above 2.0 K. This suggests that the ordered Er and Tm ions, which have positive quadrupole coefficients ..cap alpha../sub j/, interact with a crystal field that has an electronic potential valley along the c axis. The fitting of the hard axis magnetizations to Curie-Weiss law suggests that the resulting antiferromagnetic-like theta reflects the strength of the crystal field torque ...

International Nuclear Information System (INIS)

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first observation of strain-enhanced electron spin ...

International Nuclear Information System (INIS)

We theoretically model a nuclear-state preparation scheme that increases the coherence time of a two-spin qubit in a double quantum dot. The two-electron system is tuned repeatedly across a singlet-triplet level-anticrossing with alternating slow and rapid sweeps of an external bias voltage. Using a Landau-Zener-Stueckelberg model, we find that in addition to a small nuclear polarization that weakly affects the electron spin coherence, the slow sweeps are only partially adiabatic and lead to a weak nuclear spin measurement and a nuclear-state narrowing which prolongs the electron spin coherence. This resolves some open problems brought up by a recent experiment. We also show that the electronic two-spin states singlet and triplet T_+ are promising candidates for the implementation of a qubit in GaAs double quantum dots (DQD). A coherent superposition of the two-spin states is obtained by finite time Landau-Zener-Stueckelberg interferometry and the ...

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A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

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We summarize the results of point-contact Andreev-reflection (PCAR) spectroscopy in MgB{sub 2} doped by chemical substitutions, either magnetic (Mn) or non-magnetic (Al,C), obtained by us and by other groups in the last four years. Despite the variety of samples used (crystals and polycrystals of various origin) and some minor differences in the experimental techniques, these measurements have directly provided a complete and consistent picture of the effects of chemical substitutions on the gaps of MgB{sub 2} shedding light on other relevant parameters (scattering rates, DOSs) affected by doping. In Al-doped crystals and polycrystals, the gap amplitudes {delta}{sub {sigma}} and {delta}{sub {pi}} - obtained through a two-band Blonder-Tinkham-Klapwijk (BTK) fit of the Andreev-reflection conductance curves - decrease on increasing the Al content x (i.e. on decreasing the critical temperature of the contacts T{sub c}{sup A}), but remain clearly ...

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In this systematic examination of some of the spectroscopic properties of the f-elements we deal with both the trivalent lanthanides and actinides. We summarize the present status of our energy level calculations in single crystal matrices and in aqueous solution, and compare the predicted crystal-field structure in certain low-symmetry sites with that observed. Some interesting new structural insights are thereby gained. The state eigenvectors from these calculations are then used in part in reassessing and interpreting the intensities of transitions in aqueous solution via the Judd-Ofelt theory. The parameters of this theory derived from fitting experimental data are compared with those computed from model considerations. Finally, we discuss some recent contributions to the interpretation of excited state relaxation processes in aqueous solution. 79 references, 23 figures, 17 tables.

Science.gov (United States)

Generally the photonic band gap (PBG) is a multi-variable function of several parameters related to the shape and size of the dielectric columns of photonic crystals (PhCs), and a time-consuming step-by-step scanning process for each parameter has to be used to find their best combination yielding maximum PBG. In this letter, the widely used Nelder-Mead simplex algorithm is introduced to optimize these parameters simultaneously to find a larger PBG for a new kind of two-dimensional (2D) hexagonal GaAs-Air PhC. This structure can be conveniently produced by the single-exposure holographic lithography, and the specific holographic design is also systematically investigated. This study reveals that the band gaps of PhCs made by holographic lithography may be widened by introducing irregularity of the columns and lowering the symmetry of the structure.

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We propose and analyze a novel regenerative amplifier free electron laser (FEL) to produce fully coherent x-ray pulses. The method makes use of narrow-bandwidth Bragg crystals to form an x-ray feedback loop around a relatively short undulator. Self-amplified spontaneous emission (SASE) from the leading electron bunch in a bunch train is spectrally filtered by the Bragg reflectors and is brought back to the beginning of the undulator to interact repeatedly with subsequent bunches in the bunch train. The FEL interaction with these short bunches not only amplifies the radiation intensity but also broadens its spectrum, allowing for effective transmission of the x-rays outside the crystal bandwidth. The spectral brightness of these x-ray pulses is about two to three orders of magnitude higher than that from a single-pass SASE FEL.

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This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is ...

International Nuclear Information System (INIS)

Effect of low-frequency pulsating magnetic field on the microstructure and magnetic properties of amorphous alloy Fe_7_8Si_9B_1_3 were investigated. The temperature rise induced by the treatment was measured by a non-contact infrared thermometer. The crystallization behavior and microstructure of specimens were studied by Moessbauer spectroscopy and transmission electron microscope (TEM). Magnetic properties of the specimens were investigated by alternating gradient magnetometer (AGM). The results show that the low-frequency pulsating magnetic field can promote the single-phase crystallization of amorphous alloy Fe_7_8Si_9B_1_3. The frequency, f of applied field is from 10 to 40 Hz, magnetic field, H is from 0.02 to 0.04 T and treatment duration, t is from 180-300 s. The volume fraction of crystallization phase (#alpha#-Fe(Si), the grain size, 2-10 nm) is 3-7%. The temperature rise less than 7 deg. C. ...

British Library Electronic Table of Contents (United Kingdom)

Schiff-base condensation of a equimolar proportion of diacetyl-monoxime monohydrazone and 1-methylimidazole-2-carboxaldehyde in methanol gives rise to the imidazole azine, 3-(1-methylimidazol-2-yl)methylenehydrazonobutan-2-one oxime(HL). Reaction of 1:1 stoichiometric proportion of HL with copper(II)perchlorate hexahydrate in methanol yields a dimeric oximato bridged copper compound, [Cu2L2(H2O)2](ClO4)2 (1). The compound is characterized by C, H and N analyses, FT-IR, ESI?MS, conductivity measurement, UV?Vis spectra and X-ray single crystal diffraction. The title compound (1) crystallizes in the monoclinic space group P21/c with a?=?6.8533 (8), b?=?18.413 (2), c?=?11.7399 (14) ?, ??=?93.685 (2)?, V?=?1478.4 (3) ?3 and Z?=?2. The geometry around each copper center is distorted square pyram...

International Nuclear Information System (INIS)

Three new rare earth metal-rich compounds, Gd_4NiTe_2, and Er_5M_2Te_2 (M=Ni, Co), were synthesized in direct reactions using R, R_3M, and R_2Te_3 (R=Gd, Er; M=Co, Ni) and single-crystal structures were determined. Gd_4NiTe_2 is orthorhombic and crystallizes in space group Pnma with four formula units per cell. Lattice parameters at 110(2)K are a=15.548(9), b=4.113(2), c=11.7521(15)A. Er_5Ni_2Te_2 and Er_5Co_2Te_2 are isostructural and crystallize in the orthorhombic space group Cmcm with two formula units per cell. Lattice parameters at 110(2)K are a=3.934(1), b=14.811(4), c=14.709(4)A, and a=3.898(1), b=14.920(3), c=14.889(3)A, respectively. Metal-metal bonding correlations were analyzed using the empirical Pauling bond order concept.

International Nuclear Information System (INIS)

A phenomenological simulation was carried out for 41 experimental crystal-field (CF) levels within the "4I_9_/_2_-_1_5_/_2, "4F_3_/_2_-_9_/_2, "4S_3_/_2 and "2H_9_/_2 J manifolds, including the available infrared (IR) data up to #approx#15 000 cm"-"1 for the Nd"3"+ ions in the Nd_2CuO_4 single crystals. The CF Hamiltonian for the tetragonal C_4_v symmetry was diagonalized together with the free-ion Hamiltonian in a basis that spans the entire 4f"3 configuration. A rms error of 9 cm"-"1 between the calculated and experimental energy level schemes was obtained. A comparison of the spectra in the visible region between the insulating Nd_2CuO_4 and the metallic Nd_2_-_xCe_xCuO_4, allowed identifying the absorption bands associated with the development of the charge-doping induced local structural distortions in the superconducting regime.

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...

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High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

International Nuclear Information System (INIS)

We have investigated the possibility to use a microwire of BiSn to design an anisotropic thermoelectric generator. The glass-coated microwire of pure and Sn-doped bismuth was obtained by the Ulitovsky method; it was a cylindrical single-crystal with orientation (1011) along the wire axis; the C3 axis was inclined at an angle of 70 degrees to the microwire axis. It is found that doping of bismuth wires with tin increases the thermopower anisotropy in comparison with Bi by a factor of 2 - 3 in the temperature range of 200-300 K. For a Bi microwire with a core diameter of 10 ?m with a glass coating with outer diameter of 35 ?m, the transverse thermopower is ? 150 ?V/(K*cm); for BiSn, 300 ?V/(K*cm). The design of an anisotropic thermogenerator based on BiSn microwire is proposed. The miniature thermogenerator will be efficient for power supply of devices with low useful current. In addition to the considerable thermopower anisotropy of BiSn wires in a glass coating, ...

Energy Technology Data Exchange (ETDEWEB)

Neutron scattering experiments on the mixed-valence (MV) compounds SmB{sub 6} are reported. The inelastic magnetic response of SmB{sub 6} at T = 2 K, measured on a double-isotope single crystal,displays a strongly damped peak at 35 meV corresponding to the inter multiplet transition of Sm{sup 2+}. At lower energies ( h.{omega} {approx_equal} 14 meV), a narrow magnetic excitation is observed, with remarkable scattering-vector and temperature dependences of its intensity. This novel feature is discussed in terms of recent theoretical works describing the formation of an anisotropic local bound state in semiconducting MV materials. If the average samarium valence is decreased by substituting La for Sm, a peak is found to appear at high energies. The elastic magnetic form factor of SmB{sub 6} was determined using polarised neutrons and no significant difference is observed in its Q-dependence with respect to that of pure divalent samarium. This ...

International Nuclear Information System (INIS)

The AC susceptibility of La_xNd_1_-_xF_3 single crystals, for 0#<=#x#<=#0.1, has been measured from 1.5 up to 40 K and their DC susceptibility for 0#<=#x#<=#1 has been measured from 3 up to 300 K in magnetic fields up to 0.2 T. In both susceptibilities the magnetic fields were applied parallel to the crystallographic a-axis (perpendicular to the c-axis). The effective Bohr magneton number p_e_f_f and paramagnetic Curie temperature #theta#_p have been obtained, using the Curie-Weiss law in the temperature range 100-300 K. Also the g-values corresponding to the five Kramers doublets in the "4I_9_/_2 ground multiplet of Nd"3"+ ion in La_xNd_1_-_xF_3 have been determined in the direction perpendicular to the c-axis, using the Van Vleck theory of paramagnetic susceptibility. The effect of the dilution of the paramagnetic Nd"3"+ ions with diamagnetic La"3"+ ions is also discussed. (orig.).

Energy Technology Data Exchange (ETDEWEB)

A Tm{sup 3+}- Ho{sup 3+} -codoped single crystal of monoclinic BaY{sub 2}F{sub 8} has been characterized by means of high resolution FTIR spectroscopy in the wave number range 2000-24000 cm{sup -1} and in the temperature range 9-300 K. The energy level schemes of the two lanthanide ions as determined by the optical absorption spectra is presented, analyzed, and fitted within a single ion Hamiltonian model. The very small energy separation (about 0.6-1.6 cm{sup -1}) measured between the first and second sublevels of the ground state manifolds for both the ions is in line with the theoretical predictions. The impurity-phonon coupling is put into evidence by the thermally induced line shift and broadening, and by the detection of vibronic replicas of a few lines. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

British Library Electronic Table of Contents (United Kingdom)

Abstract The salts [Cnmim]2[Mo6Cl14] (mim = methylimidazolium; n = 4, 6, 12, 16, 18) have been obtained by reaction of CnmimCl with MoCl2. Thermal analysis shows the melting point decreases with increasing alkyl chain length of the cation. The imidazolium chloromolybdates(II) with n = 6-18 decompose above 340 C; [C18mim]2[Mo6Cl14] is thermally stable up to 390 C. All compounds are insensititve to the constituents of the atmosphere. Of the higher melting salts [Cnmim]2[Mo6Cl14] (n = 4, 6), high-quality single crystals could be obtained. Single-crystal X-ray structural analyses clearly show that the cluster complex anion [Mo6Cl14]2- has an electron-precise octahedral {Mo6} cluster. For [C4mim]2[Mo6Cl14], two polymorphs differing in the cation alkyl-side-chain conformation were obtained. The ...

Science.gov (United States)

We present computer modeling along with experimental data on the formation of sharp conical tips on silicon-based three-layer structures that consist of a single-crystal Si layer on a 1 {mu}m layer of silica on a bulk Si substrate. The upper Si layers with thicknesses in the range of 0.8-4.1 {mu}m were irradiated by single pulses from a KrF excimer laser focused onto a spot several micrometers in diameter. The computer simulation includes two-dimensional time-dependent heat transfer and phase transformations in Si films that result from the laser irradiation (the Stefan problem). After the laser pulse, the molten material self-cools and resolidifies, forming a sharp conical structure, the height of which can exceed 1 {mu}m depending on the irradiation conditions. We also performed computer simulations for experiments involving single-pulse irradiation of bulk silicon, reported by other groups. We discuss conditions under ...

Science.gov (United States)

This is a multi-color 230-page textbook covering analog electronics at the upper-division level. Text material is intended for a full-year sequence at 2-3 credits per term. Topics include: amplifier thermal considerations; class A IC output stage; class B complementary amplifier; class A and Class B single-ended amplifiers; feedback amplifiers; gain margin and phase margin; compensation; oscillators (Wien-bridge, Hartley, Colpitts, Pierce); piezoelectric crystals, single-pole circuits; single-pole pulse response; single-pole rectangular wave response; comparators; Schmitt triggers; 555 timers; multivibrators; RC attenuators; compensated attenuators; principles of dc-dc conversion; capacitor-based converters; buck converter; boost converter; buck-boost converter. The text is in Adobe Acrobat 4.0 format, complete with Acrobat index. Large font size allows the text to be used with ...

Energy Technology Data Exchange (ETDEWEB)

Single crystals of trigonal Cr{sub 2}Te{sub 3}, monoclinic Cr{sub 5}Te{sub 8}, and trigonal Cr{sub 5}Te{sub 8} were prepared and the single crystal structures were determined. The structures are related to the NiAs structure type by successive removal of Cr in every second metal atom layer parallel to the c axis. The strong relationship between the structures is evidenced by their very similar X-ray powder patterns. In trigonal Cr{sub 2}Te{sub 3} excess Cr occupies only one of the two possible sites. In monoclinic Cr{sub 5}Te{sub 8} the Cr atoms occupy four different crystallographic sites. The resulting ordering of the vacancies is significantly different from the hitherto reported crystal structures of transition metal chalcogenides M{sub 5}X{sub 8}. A slight increase of the tellurium content leads to an order-disorder transition from the monoclinic to a trigonal phase. The Cr ...

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Single-crystalline CeRh{sub 2}Si{sub 2} and CePd{sub 2}Si{sub 2} were grown by the Czochralsky pulling method and the temperature dependence of magnetic susceptibility was investigated. The crystalline electric field (CEF) states in each compound were determined by considering the tetragonal CEF Hamiltonian with mean-field approximation. Interactions between Ce{sup 3+} ion and the surrounding ligands in CeRh{sub 2}Si{sub 2} turned out to be strong and highly anisotropic in comparison to CePd{sub 2}Si{sub 2}. (orig.) 10 refs.

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The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

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A single-crystal x-ray study under pressure reveals a phase transition from an in-plane 2x2 commensurate potassium superstructure to a new ..sqrt..3x..sqrt..3 commensurate superstructure. This is the first such transition to be observed; it is related to the recently discovered staging transition of KC/sub 8/ under pressure. In addition this staging transition was observed to occur more slowly and at much lower pressures than in the reported neutron-scattering experiment on highly oriented pyrolytic graphite samples. 13 references, 2 figures.

International Nuclear Information System (INIS)

Single crystals of GdCl_3 doped with different concentrations of Ce"3"+ have been grown using the Bridgman-Stockbarger technique and their luminescence and scintillation properties were investigated. The luminescence spectrum of GdCl_3:Ce"3"+ is complex and consists of two bands with maxima at 350 nm and 370 nm. The maximal light yield in GdCl_3:Ce"3"+ was observed at #approx#1 mol% of Ce"3"+ (more than 38 000 ph/MeV).

Energy Technology Data Exchange (ETDEWEB)

AuxZn1-x alloys undergo a shape memory martensitic transformation whose temperature and nature (continuous or discontinuous) is strongly composition dependent. Neutron diffraction experiments were performed on single crystals of x=50 and 52 to explore the structural changes occurring at the transition temperature. A transverse modulation with wavevector q0=(1/3,1/3,0) develops below the transition temperature, with no observable change in lattice parameter. However, the Bragg peak width shows a broadening suggesting an unresolved rhombohedral distortion similar to what has been observed in NiTi-Fe alloys.

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In the early days of Moessbauer spectroscopy, it was demonstrated that coherent scattering of photons emitted by a Moessbauer source can be observed. In spite of the fact that scattering experiments could give information not accessible by the absorption method, they are not widely used. The reasons for this are, on the one hand, experimental difficulties, and on the other hand, the form of the samples, which should be large single crystals in most cases. In this work, we present a Moessbauer diffraction measurement on polycrystalline bcc iron where these problems have been overcome. We demonstrate that using the kinematical theory of gamma-ray diffraction, useful information on the relative orientation of the crystallographic axis to the hyperfine field directions can be subtracted. (orig.)

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Magnetic fluctuations present in the paramagnetic Mn{sub 0.81}Ni{sub 0.19} system have been investigated by measuring inelastic magnetic neutron scattering from a single crystal at temperatures of 450, 585 and 700 K. Antiferromagnetic correlations are observed to be present at all the temperatures studied. The spectral width of the magnetic scattering has been observed to increase with temperature, while the spatial range of the magnetic correlations is seen to decrease as the temperature is raised. The wave-vector-dependent susceptibility is found to follow a Curie-Weiss law near the (1 0 0) position, in agreement with theoretical predictions.

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A method of preparing a high temperature superconductor from an amorphous phase. The method involves preparing a starting material of a composition of Bi.sub.2 Sr.sub.2 Ca.sub.3 Cu.sub.4 Ox or Bi.sub.2 Sr.sub.2 Ca.sub.4 Cu.sub.5 Ox, forming an amorphous phase of the composition and heat treating the amorphous phase for particular time and temperature ranges to achieve a single phase high temperature superconductor.

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We present results from ab-initio electronic-structure calculations of mechanical properties of the rhombohedral phase of vanadium reported in recent experiments (R Ia), and other predicted high-pressure phases (R Ib and bcc), focusing on properties relevant to dynamic experiments. We find that of the three transitions the largest volume collapse (1.3%) is for the R Ia to R Ib transition. Calculations of the single crystal and polycrystal elastic constants reveal a remarkably small discontinuity across the phase transitions even at zero temperature where the transitions are first order.

Science.gov (United States)

We present evidence for the creation of an exchange spring in an antiferromagnet due to exchange coupling to a ferromagnet. X-ray magnetic linear dichroism spectroscopy on single crystal Co/NiO(001) shows that a partial domain wall is wound up at the surface of the antiferromagnet when the adjacent ferromagnet is rotated by a magnetic field. We determine the interface exchange stiffness and the antiferromagnetic domain wall energy from the field dependence of the direction of the antiferromagnetic axis, the antiferromagnetic pendant to a ferromagnetic hysteresis loop. The existence of a planar antiferromagnetic domain wall, proven by our measurement, is a key assumption of most exchange bias models.

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Micro-compression specimens, 1O-15{mu}m in diameter by 20-30{mu}m in height, were produced from individual parent grains in a polycrystalline U-13at%Nb shape-memory alloy using the focused ion beam (FIB) technique. The specimens were tested in a nanoindentation instrument with a flat diamond tip to investigate stress-strain behavior as a function of crystallographic orientation. The results are in qualitative agreement with a single-crystal accommodation strain (Bain strain) model of the shape-memory effect for this alloy.

Science.gov (United States)

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al{sub 0.5}Ga{sub 0.5}As and In{sub 0.53}Ga{sub 0.47}As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, {ital E}({Gamma}{sub 1{ital c}}) of AlP, {ital E}({ital L}{sub 1{ital c}}) of AlAs, and {ital E}({ital L}{sub 1{ital c}}) of AlSb are discussed and attributed to various experimental uncertainties. Several other quasiparticle-excitation-related properties are ...

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The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

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The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

International Nuclear Information System (INIS)

As part of a study into the properties of ferroelectric single crystals at nanoscale dimensions, the effects that focused ion beam (FIB) processing can have, in terms of structural damage and ion implantation, on perovskite oxide materials has been examined, and a post-processing procedure developed to remove such effects. Single crystal material of the perovskite ferroelectric barium titanate (BaTiO_3) has been patterned into thin film lamellae structures using a FIB microscope. Previous work had shown that FIB patterning induced gallium impregnation and associated creation of amorphous layers in a surface region of the single crystal material some 20 nm thick, but that both recrystallization and expulsion of gallium could be achieved through thermal annealing in air. Here we confirm this observation, but find that thermally induced gallium expulsion is ...

International Nuclear Information System (INIS)

During Phase 2 of our study of the CIXS conceptual design we have tackled additional important issues that are unique to the ITER environment. These include the thermal control of the crystal and detector enclosures located in an environment with a 100-250 C ambient temperature, tritium containment, and the range of crystal and detector movement based on the need for spectral adjustments and the desire to make measurements of colder plasmas. In addressing these issues we have selected a ''Dewar''-type enclosure for the crystals and detectors. Applying realistic view factors for radiant heat and making allowance for conduction we have made engineering studies of this enclosure and showed that the cooling requirements can be solved and the temperature can be kept sufficiently constant without compromising the specification parameters of the CIXS. We have chosen a minimum 3 mm combined thickness of the six beryllium windows ...

Energy Technology Data Exchange (ETDEWEB)

1. In order to carry out isothermic crystal growth experiments of YBCO the 123 primary crystallization field was determined by means of phase diagram investigations and crystal growth experiments at different oxygen partial pressure. 2. YBCO single crystals of high crystallographic perfection were grown and conclusions on the flux pinning mechanism were drawn. 3. By means of Liquid Phase Epitaxy (LPE) single crystalline (Tc{approx}90 K; {Delta}T{<=}0.5 K) c- and a,b- YBCO fils have been prepared on NdGaO{sub 3} and LaGaO{sub 3} substrates. The films were characterized structurally and magnetically. 4. Our fist melt textured YBCO ``single crystals`` possess intracrystalline critical current densities >10{sup 4} A/cm{sup 2} at B{<=}2T. The irreversibility inductions are {<=}6 T at 77 K. A simple demonstrator ...

International Nuclear Information System (INIS)

Six uranyl coordination compounds, UO_2(OH)(PYCA) (1), UO_2(PYCA)_2(H_2O).2H_2O (2), UO_2(PIC)_2 (3), UO_2(H_2O)_2(NIC)_2 (4), UO_2(OH)(HINIC)(INIC) (5), and UO_2(PYTAC)_2(H_2O)_2 (6) were grown as single crystals via hydrothermal synthesis (PYCA - pyrazine-2-carboxylate, PIC - picolinate, NIC - nicotinate, INIC - iso-nicotinate, and PYTAC - 2-(pyridin-4-yl)thiazole-5-carboxylate) to study their optical properties. All six compounds have been identified via single crystal X-ray diffraction and fully characterized via powder X-ray diffraction, infrared spectroscopy, UV-Vis spectroscopy, and fluorescence spectroscopy. Three of the complexes, 1, 3, and 6, represent new structures, and their synthesis and structural characterization is detailed within. The structures of 2, 4, and 5 have previously been reported in the literature. Coordination polymer 1 crystallizes in the orthorhombic ...

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The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.

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The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been observed. At last has ...

International Nuclear Information System (INIS)

Y2Te4O11:Eu3+ and Y2Te5O13:Eu3+ single crystals in sub-millimeter scale were synthesized from the binary oxides (Y2O3, Eu2O3 and TeO2) using CsCl as fluxing agent. Crystallographic structures of the undoped yttrium oxotellurates(IV) Y2Te4O11 and Y2Te5O13 have been determined and refined from single-crystal X-ray diffraction data. In Y2Te4O11, a layered structure is present where the reticulated sheets consisting of edge-sharing [YO8]13- polyhedra are interconnected by the oxotellurate(IV) units, whereas in Y2Te5O13 only double chains of condensed yttrium-oxygen polyhedra with coordination numbers of 7 and 8 are left, now linked in two crystallographic directions by the oxotellurate(IV) entities. The Eu3+ luminescence spectra and the decay time from different energy levels of the doped compounds were investigated and all detected emission levels were identified. Luminescence properties of the Eu3+ cations have been ...

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Crystals of disamarium rhenium (IV) pentoxide, Sm{sub 2}ReO{sub 5}, were obtained by subsolidus reaction of samariumsesquioxide and rheniumdioxide (ratio 1:1) in sealed Pt 10Rh tubes at 1673 K. The structure was determined by single-crystal X-ray diffraction. Sm{sub 2}ReO{sub 5} crystallizes in the tetragonal system with unit cell dimensions a = 8.646(3) {angstrom} and c = 5.747(2) {angstrom} and space group P4/n (no. 85) with Z = 4. The structure consists of isolated RE{sub 2}O{sub 8} groups and the (Sm{sub 4}O) chains are inter-connected by common oxygen atoms to form a three-dimensional network. Each Re{sub 2}O{sub 8} group is composed of a pair of rhenium each surrounded by four oxygens with a short Re-Re distance of 2.251(1) {angstrom} indicating a metal-metal bond. Rhenium has the formal oxidation state of +4. The observed magnetizations in the temperature range 1.8 < T < 100 K exhibits antiferromagnetic ...

Science.gov (United States)

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser projection displays, holographic memories, and plastic fiber ...

International Nuclear Information System (INIS)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub 0.5/P ...

British Library Electronic Table of Contents (United Kingdom)

Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800degreeC based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800degreeC. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of t8-Ce3Pd4Si4 (U3Ni4Si4-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7)nm), t16-Ce2Pd14Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2)nm) and also for t18-CePd1-xSix (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4)nm). Rietveld refinements established the atom arrangement in the structures of...

British Library Electronic Table of Contents (United Kingdom)

Copper(II) complex coordinated with cyclam-type macrocyclic tetramine, C-meso-1,5,8,12-tetramethyl-1,4,8,11-tetraazacyclotetradecane (2Cdmc) has been synthesized and characterized by single crystal X-ray crystallographic analysis and UV?Vis absorption spectra. Solved molecular structure of [Cu(2Cdmc)(H2O)]Cl2?2H2O (1) revealed that macrocyclic ligand 2Cdmc was in the most stable trans-III structure, but the C-methyl groups of 2Cdmc adopted energetically unfavorable axial configuration (C-axial). This complex 1 is the second example of complex of cyclam-type tetramine with only axially oriented C-methyl groups. This complex adopted five-coordinated square-pyramidal geometry with one water molecule occupying one of the two apical sites. Network of hydrogen bonds involving counter anions (Cl?...

International Nuclear Information System (INIS)

Single-crystal neutron diffraction has been used to observe the interactions between deuterated ethanol (CD3CD2OH) and lysozyme in triclinic crystals of hen egg white lysozyme soaked in 25% (v/v) ethanol solutions. A total of 6047 observed reflections to a resolution of 2 A were used, and 13 possible ethanol sites were identified. The three highest occupied sites are close to locations for bromoethanol found in an earlier study by Yonath et al. [Yonath, A., Podjarny, A., Honig, B., Traub, W., Sielecki, A., Herzberg, O., and Moult, J. (1978) Biophys. Struct. Mech. 4, 27-36]. Structure refinements including a model for the flat solvent lead to a final crystallographic agreement factor of 0.097. Comparison with earlier neutron studies on triclinic lysozyme showed that neither the molecular structure nor the thermal motions were affected significantly by the ethanol. A detailed analysis of the ethanol-lysozyme contacts showed 61% of these to be ...

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GSTD1 is one of several insect glutathione S-transferases capable of metabolizing the insecticide DDT. Here we use crystallography and NMR to elucidate the binding of DDT and glutathione to GSTD1. The crystal structure of Drosophila melanogaster GSTD1 has been determined to 1.1 {angstrom} resolution, which reveals that the enzyme adopts the canonical GST fold but with a partially occluded active site caused by the packing of a C-terminal helix against one wall of the binding site for substrates. This helix would need to unwind or be displaced to enable catalysis. When the C-terminal helix is removed from the model of the crystal structure, DDT can be computationally docked into the active site in an orientation favoring catalysis. Two-dimensional {sup 1}H,{sup 15}N heteronuclear single-quantum coherence NMR experiments of GSTD1 indicate that conformational changes occur upon glutathione and DDT binding and the residues that ...

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Absorption and emission measurements at liquid-helium temperature, liquid-nitrogen temperature and room temperature have been performed on tetragonal scheelite-type rare earth sodium double molybdates Na[sub 5]RE(MoO[sub 4])[sub 4] and on RE-doped Na[sub 5]Gd(MoO[sub 4])[sub 4] samples. The rare earth occupies one single crystallographic position with S[sub 4] as point symmetry. The spectra were analysed according to the crystal field theory. From the experimental data, nearly complete energy level schemes of the Pr[sup 3+] and Nd[sup 3+], on the 4f [sup 2] and 4f [sup 3] configurations were derived. Very good correlation was obtained between the experimental and simulated energy level schemes, first for the approximated D[sub 2d] and then for the true S[sub 4] symmetries. The crystal field parameters vary smoothly with the atomic number of the rare earth, when compared with those determined previously for Eu[sup 3+] in the ...

CERN Document Server

We report $^{7}$Li pulsed NMR measurements in polycrystalline and single crystal samples of the quasi one-dimensional S=1 antiferromagnet LiVGe$_2$O$_6$, whose AF transition temperature is $T_{\\text{N}}\\simeq 24.5$ K. The field ($B_0$) and temperature ($T$) ranges covered were 9-44.5 T and 1.7-300 K respectively. The measurements included NMR spectra, the spin-lattice relaxation rate ($T_1^{-1}$), and the spin-phase relaxation rate ($T_2^{-1}$), often as a function of the orientation of the field relative to the crystal axes. The spectra indicate an AF magnetic structure consistent with that obtained from neutron diffraction measurements, but with the moments aligned parallel to the c-axis. The spectra also provide the $T$-dependence of the AF order parameter and show that the transition is either second order or weakly first order. Both the spectra and the $T_1^{-1}$ data show that $B_0$ has at most a small effect on the ...

International Nuclear Information System (INIS)

The crystal structure and phonon densities of states (DOS) of #beta#'-SiAlON ceramics, Si_6_-_zAl_zO"zN_8_-_z (0 #<=# z #<=# 4), prepared by a novel slipcast method, are studied by neutron-scattering techniques. The samples with z < 4 form a single-phase solid solution of Si-Al-O-N isostructural to #beta#-Si_3N_4 (space group P6_3/m). A consistent preferential occupation of the 2c sites by oxygen atoms and the 6h sites by nitrogen atoms exists within this structure. The phonon DOS of #beta#'-SiAlON displays phonon bands at #approx#50 and 115 meV. These features are considerably broader than the corresponding ones in #beta#-Si_3N_4 powder.

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The strongly localized one-electron (D{sup 0}) and two-electron (D{sup -}) donor states are considered with the lattice deformation around the donor center taken into account. For GaAs, donor energy levels have been calculated as functions of the hydrostatic pressure. The calculated energy positions and pressure coefficients agree with the experimental data. It is shown that the interaction with phonons reduces the probability of radiative transitions between the states of different localization and leads to the metastability of shallow-level donor states with respect to the D{sup -} state in GaAs and both the states (D{sup 0} and D{sup -}) in CdF{sub 2}. (author) 7 refs, 1 fig

Science.gov (United States)

A 5 GHz GaAs monolithic astable multivibrator-type voltage-controlled oscillator has been developed. The monolithic oscillator uses 2 micron long self-aligned TiW-silicide gate MESFETs as well as GaAs Schottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X-band oscillation frequency can be obtained with 1 micron long gate FET and low loss resonance inductors.

British Library Electronic Table of Contents (United Kingdom)

The dependence of melting temperature T m on the size and shape of an n -dimensional nanocrystal of elementary single-component substance is studied. The nanocrystal has the form of an n-dimensional parallelepiped with a square base. The ratio of the length of side rib to the length of base rib (which is equal to f) defines the form of the system. It is demonstrated that, if the surface pressure is ignored, the value of T m decreases with isomorphic (f = const) decrease in the size of nanocrystal. In so doing, the more the value of form parameter f deviates from unity, the more appreciable the size dependence of T m will be. However, if the surface pressure (?Laplace pressure??) is taken into account in the case of decrease in size, the value of T m may vary significantly. In so doing, if ...

International Nuclear Information System (INIS)

We have investigated the superconducting and metallurgical properties of the ternary compounds RPd_2Si_2 and RRh_2Si_2 with R = Y, La, and Lu. All RPd_2Si_2 compounds and LaRh_2Si_2 were found to be type-I superconductors below 1 K. A detailed metallurgical analysis shows that segregation of second phases can easily mask the intrinsic (stoichiometric ratio 1:2:2) intermetallic-compound properties. Two sample-preparation techniques, viz., single crystals and off-stoichiometry, were utilized to establish where bulk superconductivity occurs. The type-I behavior of these compounds is explained with an analogous model as is used for the heavy-fermion superconductors CeCu_2Si_2 and URu_2Si_2.

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The electrical resistivity, Hall effect, and magnetic susceptibility of single-crystal UPd[sub 2]Si[sub 2] have been studied between 4.2 and 300 K. A large anisotropy was observed in both the magnetic and transport properties. There is a quadratic temperature dependence of the resistivity for a range of temperatures between 4.2 and 80 K. At higher temperatures, the resistivity indicates a Kondo-type behavior. The behavior of these quantities is accounted for by the magnetic phase transitions at 108 and 136 K reported from neutron-scattering studies. At high temperatures, the magnetic susceptibility of UPd[sub 2]Si[sub 2] is Curie-Wiess-like along the [ital c] axis. The temperature dependence of the Hall coefficient above 108 K is accounted for by a theoretical model invoking skew scattering of conduction electrons by localized magnetic moments.

Energy Technology Data Exchange (ETDEWEB)

Magnetization, specific heat, and electrical resistivity measurements were made on single crystals of the filled skutterudite compound PrOs{sub 4}As{sub 12}. Specific heat measurements indicate an electronic specific heat coefficient {gamma} {approx} 50-200 mJ/mol K{sup 2} at temperatures 10 K {le} T {le} 18 K, and {approx} 1 J/mol K{sup 2} for t {le} 1.6 K. Magnetization, specific heat, and electrical resistivity measurements reveal the presence of two, or possibly three, ordered phases at temperatures below {approx} 2.3 K and in fields below {approx} 3 T. The low temperature phase displays antiferromagnetic characteristics, while the nature of the ordering in the other phase(s) has yet to be determined.

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Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

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Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi{sub 2}-based materials, which are borderline ceramic-intermetallic compounds. MoSi{sub 2} single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi{sub 2} possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi{sub 2}-Si{sub 3}N{sub 4} composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi{sub 2}-based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing.

International Nuclear Information System (INIS)

This paper describes the heat transfer augmentation and the flow situation around a single spacer (a cylindrical rod) on the heated surface of a parallel plate duct in order to examine basically the effects of the spacer in the fuel elements of a high temperature gas-cooled reactor. The ends of the cylindrical rod contact the upper and lower planes. A thermosensitive liquid crystal film is used to indicate the effective area for the heat transfer. The mean Nusselt number, which is estimated within the optional distance from the spacer to the downstream direction, peaks at a dimensionless distance of X/D = 1-3, and after that decreases gradually with the flow direction. The manner in which heat transfer corresponds to the flow situation is also examined. The horseshoe vortex, produced around the spacer, affects the wake and contributes to the increase of the local heat transfer. (author).

International Nuclear Information System (INIS)

Nanoscale islands of Cu_2O have been synthesized on single-crystal SrTiO_3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (MBE). Island growth location has been controlled by using an ex situ Ga"+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex situ atomic force microscopy study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

International Nuclear Information System (INIS)

Thin Pt, Pd, Pt_2Si, PtSi, Pd_2Si, Ni, Mo, W, Nb, Ti, V films deposited on Si single crystal were treated by using electron beam pulses of 60 ns duration in the 0.4-4 J/cm"2 energy density range. Irradiation of these structures produces at the same time many phases. Post-thermal annealing of the reacted layer induces the formation of a stable phase, the same obtained by only thermal treatment in a conventional furnace. A linear relationship between the energy density range and the lowest eutectic temperature of the compounds formed has been found. Further SEM observations seem to identify a liquid layer from which the phases are forming by subsequent fast cooling. (author).

Energy Technology Data Exchange (ETDEWEB)

Stoichiometric MgAl{sub 2}O{sub 4} spinel specimens irradiated in FFTF-MOTA at temperatures between 385 and 750C to fluences ranging from 2.2 to 24.9 {times} 10{sup 22}n cm{sup {minus}2} (E>0.1 MeV) darken significantly, but do not develop any significant loss in weight or change in dimensions. Similar behavior was observed in both single crystal and fully dense polycrystalline specimens. Measurements of elastic constants by an ultrasonic technique show that no measurable changes occur as a result of the irradiation. These and other results confirm the stability of this material for fusion application as an electrical insulator.

Energy Technology Data Exchange (ETDEWEB)

To study the defect creation induced by electronic processes in refractory oxides, MgO single crystals were irradiated with high energy tin, uranium and lead ions. Optical absorption measurements showed that F-type centers (oxygen vacancies with trapped electrons) were created during irradiation. The total number of centers per unit area of bombarded sample increases linearly with irradiating fluence. The main part of the point defects was found to arise from electronic processes. The concentration of F-type centers induced by ionization increases with the electronic energy losses. Assuming a saturation of point defect concentration at high fluences, F-type center creation cross sections could be estimated. The influence of irradiation temperature and of the velocity of the bombarding ions are discussed.

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Rafting of the {gamma}/{gamma}{prime} morphology of nickel-base superalloys is a well-known phenomenon during high-temperature deformation. The initial stages of this type of directional coarsening were modeled two-dimensionally by the method of finite elements (FEs) using an energy-perturbation approach. In addition to the elastic energy density, the effect of the local difference of the hydrostatic stresses in {gamma} and {gamma}{prime} in combination with the different lattice parameters of the two phases was considered in the calculations as a further driving force. From the results of modeling, the deformation-induced internal stresses and strains were determined and used to evaluate the direction-dependent lattice parameters and lattice misfits of the two phases. The results agree well with experimentally determined values.

British Library Electronic Table of Contents (United Kingdom)

A new strontium metal-organic framework, [Sr2(BTEC)(H2O)4] 2H2O (1) (H4BTEC=benzene-1,2,4,5-tetracarboxylic acid), has been successfully synthesized by mixing the starting reagents. The single-crystal structure analysis showed that compound 1 displayed three-dimensional structures containing inorganic motifs with two-dimensional layers pillar-connected through organic linkers and forming water-coordinated neutral framework. Further studies revealed that compound 1 was insoluble in water and that it emitted strong luminescence at approximately 437nm after dehydration.

International Nuclear Information System (INIS)

The local Yb3+ magnetic susceptibility tensor was recently measured in the frustrated pyrochlore compound Yb2Ti2O7 by means of in-field polarized neutron scattering in a single crystal. A very anisotropic effective exchange tensor was derived for the Yb3+ ion. Using this result, we reinterpret here the data for the powder susceptibility in Yb2Ti2O7. We show that, in the case of a well-isolated Kramers doublet with anisotropic g and exchange tensors, the inverse susceptibility for a powder sample does not strictly obey a Curie-Weiss law at low temperature. We discuss the consequences regarding the paramagnetic Curie temperature, usually taken as a measure of the exchange/dipolar interaction, and the exotic 'slow fluctuation' ground state of Yb2Ti2O7. (fast track communication)

Energy Technology Data Exchange (ETDEWEB)

We have generated approximately 100 watts of frequency doubled light from the output of an electro-optically Q-switched, diode-pumped Nd:YAG slab laser oscillator operating at an average power of 200 watts (2.5 kHz repetition rate, 80 mJ/pulse, 25 ns pulsewidth). The Q-switch was a compensated z-axis propagation LiNbO{sub 3} electro-optic modulator, and the frequency conversion crystal was a thin slab of KTP. In addition, Q-switched operation at an average power of approximately 250 watts with 26 ns pulsewidths has been demonstrated.

Energy Technology Data Exchange (ETDEWEB)

Short communication

Science.gov (United States)

Not Available

International Nuclear Information System (INIS)

The electronic structure and surface interactions vapor-deposited Cu on single-crystal and polycrystalline Bi_2Ca/sub 1+//sub x//sub Sr>2-//sub x//sub Cu>2/O/sub 8+//sub y/ were studied using x-ray photoelectron spectroscopy. The results are compared to the Cu/YBa_2Cu_3O/sub 7-//sub x/ interface. Changes in the Cu 2p satellite emission indicate that the Cu adatoms do not disrupt Bi_2Ca/sub 1+//sub x/Sr/sub 2-//sub x/Cu_2O/sub 8+//sub y/ as extensively as YBa_2Cu_3O/sub 7-//sub x/. However, deposition of Cu induces changes in the Bi environment in the superconductor, and surface segregation of Bi metal was observed at high coverages. Core-level attenuation results suggests minimal outdiffusion of oxygen, in contrast with what is observed for Cu/YBa_2Cu_3O/sub 7-//sub x/.

Science.gov (United States)

Surface crystallization and surface-to-bulk ratio in high-level waste glasses.

Science.gov (United States)

Lysozyme crystal growth rates over 5 orders of magnitude in range can be described using a

International Nuclear Information System (INIS)

The objectives of this research were to investigate the possibility of controlling the #alpha#'/#beta#' phase ratio and morphology in Sialon ceramics. These objectives have been sought by the control of the starting composition, and by post sintering heat treatment. The main emphasis has been on the production of a series of #alpha#' and (#alpha#'+#beta#') Sialon ceramics with a minimum amount of the glass phase by the pressureless sintering technique and using ytterbium (Yb) as an #alpha#' stabilising element. The Yb additions were made via the oxide or the alumino- silicate presynthesised glass; the latter was found to improve the density. The XRD analysis of the as sintered materials revealed #alpha#' to be the dominant phase with minor contributions from #beta#' sialon and/ or 12H A1N polytype. Additions of SiO_2 or #beta#-Si_3N_4 were made to various materials to assess potential mechanisms for obtaining control over the microstructural development of #alpha#'/#beta#' sialon ...

Science.gov (United States)

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

UK PubMed Central (United Kingdom)

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).

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X-ray photoelectron spectroscopy and ex situ scanning tunneling microscopy measurements have been combined to investigate the thickness, the chemical composition, and the structure of passive films formed in 0.5 M H{sub 2}SO{sub 4} on Fe-22Cr(110). Aging under polarization at +500 mV/SHE causes a dehydration (anodic) reaction of the outer chromium hydroxide layer of the passive film. This anodic reaction results in a thickening of the inner mixed Cr(III) and Fe(III) oxide layer enriched in Cr{sub 2}O{sub 3}. It also causes a coalescence of the oxide nuclei of the passive film and a crystallization of the inner Cr{sub 2}O{sub 3}. It also causes a coalescence of the oxide nuclei of the passive film and a crystallization of the inner Cr{sub 2}O{sub 3} oxide layer in epitaxy with the substrate. The epitaxial relationship is {alpha}-Cr{sub 2}O{sub 3}(0001) {parallel} Fe-22Cr(110) with three different azimuthal orientations. Aging under polarization ...

International Nuclear Information System (INIS)

On the basis of accurate crystal structure determination, the mineral phosphuranylite corresponds to the chemical formula KCa(H_3O)_3(UO_2)_7(PO_4)_4O_4.8H_2O. Cmcm, a=15.778 (3)-15.899(2), b=13.702(2)-13.790(5), c=17.253(3)-17.330(3)A, Z=4, D_x=4.575-4.631g cm"-"3, #mu#=287.6-291.1cm"-"1. The presence of potassium (about 1.80wt%K_2O), overlooked until now, has been confirmed by microprobe analysis on samples from four different localities. The best data for structure determination have been obtained by single-crystal X-ray diffraction on specimens from Capoterra, Sardinia, and Bois Noirs, France; here 1453 and 1254 independent reflections, respectively, were used in the refinement, and the corresponding final R index is 0.036 and 0.048. The structure consists of layers of phosphate groups connected with hexagonal, pentagonal and tetragonal dipyramids centered on the U atoms. The Ca and K atoms are located within channels in the uranylphosphate ...

International Nuclear Information System (INIS)

Full text: It is known that the ion implantation of germanium single crystals at room temperature results in drastic alteration of the germanium surface and the formation of cellular relief. Voids were found into the near-surface damage layer. The intersection of these voids with the germanium surface, as result of sputter etching, forms cellular relief. However, exact mechanism responsible for formation of the voids is not known. A 10 and 30 keV Ga"+ irradiation of Ge #left brace#100#right brace# crystal at room temperature was carried out using a focused ion beam (FIB) system with a dose in the range 0.5x10"1"2 to 1.5x10"1"4 ion/cm"2. The topology of the modified germanium surface and the structure of the radiation damage was studied using imaging facilities of the FIB systems and transmission electron microscopy. The strong cellular structure of Ge was observed after an ion dose of 3x10"1"3 ion/cm"2. High-resolution TEM ...

International Nuclear Information System (INIS)

Pale colored BiY_1_-_xR_xGeO_5 (R=rare-earth from Pr to Yb) polycrystalline samples exhibit a crystalline phase isostructural with the orthorhombic Pbca (No. 61) structure-type established for BiYGeO_5 and BiYbGeO_5. R occupies a single point site in the host, with the lowest C_1 symmetry. While for Pr and Nd x must be #<=#0.35, for smaller R ions, Sm to Yb, the phase appears for any x content. Detailed crystallographic data for BiErGeO_5 have been determined from the structure refinement of its neutron diffraction profile at room temperature. Optical absorption and photoluminescence measurements at 10 K have been performed for BiEuGeO_5. An initial approach to the parametrization of crystal-field effects on this new host has been provided by results of the semi-empirical Simple Overlap Model, which considers the crystallographic positions of the nearest neighbors around R. Furthermore, the strongly reduced "7F_J_M set of levels of the 4f"6 ...

International Nuclear Information System (INIS)

The crystal structure of borophosphates ABPO_5 (A = alkaline earth or Pb) was resolved on a polycrystalline sample using the Rietveld method. The x-ray diffraction patterns data show that ABPO_5 crystallize in a centrosymmetric space group P3_121 and their structure is related to the borogermanates REBGeO_5 with a stillwellite-type structure. Pr"3"+ ion was used as a local structural probe to corroborate the structural resolution results. Absorption and fluorescence spectra of A_1_-_xPr_xBP_1_-_xGe_xO_5 (A alkaline earth or Pb; x = 0.05) have been investigated at different temperatures. At 9 K the 3"H_4#->#"3P_0 transition of trivalent praseodymium ion (4f"2 configuration) is observed as a single line. This indicates a unique crystallographic site for the rare earth ion in these compounds replacing the divalent cation. Energy level schemes were deduced from the low-temperature spectroscopic measurements. Comparing the ...

Energy Technology Data Exchange (ETDEWEB)

Crystal Geyser in eastern Utah is a rare, non-geothermal geyser that emits carbon dioxide gas in periodic eruptions. This geyser is the largest single source of CO{sub 2} originating from a deep reservoir. For this study, the amount of CO{sub 2} emitted from Crystal Geyser is estimated through measurements of downwind CO{sub 2} air concentration applied to an analytical model for atmospheric dispersion. Five eruptions occurred during the 48-hour field study, for a total of almost 3 hours of eruption. Pre-eruption emissions were also timed and sampled. Slow wind during three of the active eruptions conveyed the plume over a grid of samplers arranged in arcs from 25 to 100 m away from the geyser. An analytical, straight-line Gaussian model matched the pattern of concentration measurements. Plume width was determined from least-squares fit of the CO{sub 2} concentrations integrated over time. The CO{sub 2} emission rate was ...

International Nuclear Information System (INIS)

A new study on the pressure-induced phase transitions of TiO_2 has been performed using all-electron density-functional theory based computations with the projector augmented wave and the linearized augmented plane wave methods considering five experimentally observed structures. The static results yield a picture that is consistent with experiments, i.e., phase transitions with pressure are predicted as rutile #-># monoclinic baddeleyite (MI) #-># orthorhombic I (OI) #-># cotunnite (OII) on compression, and OII #-># OI #-># MI #-># columbite (TiO_2II) on decompression. The elasticities of these five polymorphs are compared. Except for the baddeleyite structure, which is considerably softer than the other polymorphs, all phases show a zero pressure bulk modulus in the range of 200-240 GPa, consistent with compression results and the single crystal elastic constant; on the basis of these results we can say that the cotunnite ...

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The purpose of this memo is to give an update on our work on ceramic laser materials--feasibility proposal 04-FS-006. Transparent ceramic materials have several major advantages over single crystals in laser applications including, ease and robustness of manufacturing, large apertures, design flexibility, fracture toughness, high activator concentrations, uniformity of composition, no residual stress, and others discussed in the proposal. After a decade of working on making transparent YAG:Nd in 1995 Japanese workers demonstrated samples for the first time that performed as well in lasers as their single crystal counterparts. Since then several laser materials have been made and evaluated. For these reasons, developing ceramic laser materials is the most exciting and futuristic materials topic in today's major solid-state laser conferences. The highlights and executive summary of our work to ...

International Nuclear Information System (INIS)

The compositions of passive films formed on Fe-17Fr-13Ni (at. %) and Fe-18.5Cr-14Ni-1.5Mo (100) single crystals have been determined and the structure of the alloy under the film has been investigated. The alloys were passivated in 0.05M H_2SO_4 at 250 mV/SHE for 30 min. The oxygen content was measured by nuclear microanalysis using the "1"6O(d,p) "1"7O* reaction. The oxygen content in the passive film is similar for the two alloys and equal to (12#+-#2) 10"1"5 O/cm"2. The cationic compositions of the passive films have been determined by "4He channeling at two incident beam energies: 0.8 and 2.0 MeV. For the two alloys studied, a total cation content of (5#+-#2)10"1"5 at/cm"2 is found in the passive films. The corresponding thickness is about 12 A. There is an excess of oxygen, which can be attributed to the presence of hydroxyls and sulfate. A strong chromium enrichment is found in the passive film formed on both alloys: chromium represents ...

International Nuclear Information System (INIS)

Single crystals of U(Ni_1_-_xPd_x )_2Si_2 for x = 0.05, 0.10 and 0.15 have been grown. Magnetization and electrical resistivity measurements were performed in a wide range of temperatures, magnetic fields and high pressures in order to study stability of magnetic phases in the solid solutions between UNi_2Si_2 and UPd_2Si_2 with a special emphasis on the type of ground state. In UPd_2Si_2 the simple AFI-type antiferromagnetic structure of U moments is observed at low temperatures. UNi_2Si_2 adopts the uncompensated AF structure (UAF) with the ++- stacking of U moments along the c-axis and consequently this compound exhibits a spontaneous magnetization corresponding to 1/3 of the U moment. The substitution of Pd for Ni leads to a rapid decay of the spontaneous magnetization. The evolution of magnetization and electrical resistivity behavior with Pd doping is tentatively attributed to the coexistence of the AF-I and UAF phases in the ground state ...

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The National Institute of Materials Science (NIMS) has utilized the in-house alloy design program to develop a 5{sup th} generation Ni-base single crystal superalloy, TMS-196 with superior high temperature creep, thermo mechanical fatigue (TMF) and oxidation resistance by incorporating further ruthenium (Ru) and chromium (Cr) content over the compositions of 4{sup th} generation superalloys. With Ru additions in advanced superalloys to enhance phase stability, higher content of refractory elements can be accommodated to provide further strengthening; the associated oxidation resistance can be improved by the increase in Cr additions. In present article, TMS-196 has been subjected to cyclic/isothermal oxidation tests at 1100 C and 900 C, creep at conditions between 800 C{proportional_to}1100 C/137MPa{proportional_to}735MPa and TMF cycles. Preliminary studies indicate that the surface of oxidized TMS-196 can exhibit continuous alumina layer ...

International Nuclear Information System (INIS)

The radiation-induced microstructural changes have been studied by cross-sectional transmission electron microscopy for single-crystal #alpha#-Al_2O_3 samples irradiated with triple ion beams (0.25 MeV H"+, 0.6 MeV He"+ and 2.4 MeV O"2"+; 'Triple (A)'), (0.33 MeV H"+, 0.45 MeV He"+ and 1.3 MeV O"+; 'Triple (B)') and three consecutive single ion beams (0.3 MeV H"+ ion followed by 0.6 MeV He"+ and then 0.8 MeV O"+ ions) at 650 C to doses in the range 0.1-8.4 dpa at the damage peak. In the specimen irradiated with Triple (A), having the same average projected range to a total peak dose of 3.7 dpa, cavities with an average diameter of 13 nm were formed between 1.2 and 1.75 #mu#m in depth causing a swelling of 0.1% at the peak, which is larger than those of the specimens irradiated with other conditions. The extent of the cavity-introduced region is some 40% smaller than observed in the damage region due to the He"+ and the O"+ ions and due to the ...

CERN Document Server

This handbook is a unique compendium of knowledge on all aspects of the physics of liquid crystals. In over 500 pages it provides detailed information on the physical properties of liquid crystals as well as the recent theories and results on phase transitions, defects and textures of different types of liquid crystals. An in-depth understanding of the physical fundamentals is a prerequisite for everyone working in the field of liquid crystal research. With this book the experts as well as graduate students entering the field get all the information they need.

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The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native oxide--hydrocarbon layer during the Ni/GaAs, Pd/GaAs, and Pt/GaAs reactions is also investigated. Only the ...

Science.gov (United States)

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

International Nuclear Information System (INIS)

Three new rare earth metal-rich compounds, Gd_6MTe_2 (M=Co, Ni) and Er_6RuTe_2, were synthesized in direct reactions between the R, R_3M, and R_2Te_3 (R=Gd, Er, M=Co, Ni, Ru). These materials all adopt the same Zr_6CoAl_2 structure type with space group P6-bar 2m (No. 189, Z=1). Single crystal structures of Gd_6CoTe_2 and Er_6RuTe_2 were determined and lattice parameters are a=b=8.3799(5), c=3.9801(4) A, and a=b=8.1473(5) A, c=3.9962(4) A, respectively. Gd_6NiTe_2 was characterized by X-ray powder diffraction; lattice parameters are a=b=8.412(2), c=3.9577(9) A. Metal-metal bonding correlations were analyzed using the empirical Pauling bond order concept.

International Nuclear Information System (INIS)

Luminescence and reflection spectra as well as luminescence kinetics of the 1 mol% Sm3+-doped crystalline lanthanum magnesium meta borate (LaMgB5O10) and gadolinium magnesium meta borate (GdMgB5O10) were analyzed. Materials were synthesized by conventional solid state route and showed bright orange-red emission under UV excitation. Emission spectra contain sharp and well resolved Sm3+4G5/2#->#6HJ transitions indicating a strong crystal-field effect. In case of gadolinium compound energy transfer between Gd3+ and Sm3+ was detected. The luminescent kinetics of the Sm3+ in analyzed powders is characterized by single exponential decay and experimental values vary in the range 2.2-2.4 ms. - Research highlights: ? Phosphorescence of samarium-doped lanthanide magnesium meta borates. ? Bright and well resolved orange-red emission of Sm3+ under UV excitation. ? Energy transfer from Gd3+ to Sm3+ in gadolinium magnesium meta borate is observed. ? The ...

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Three aspects of the research project Surface physics with cold and ultracold neutron reflectometry'' were stressed during the present first year: (1) Setup of the reflectometer facility at the research reactor of the Rhode Island Nuclear Science Center. The installation provides a narrow pencil beam'' analyzed by time of flight using a chopper system. Following beam characterization and a test measurement of the total cross section of copper single crystal first reflectivity measurements are currently performed using a supermirror. (2) Design stud for the ultracold neutron imaging system, with involvement of the relevant industry. Bids are available for several components indicating that it will be very difficult to build the entire system unless further funds become available. (3) Analysis of features of neutron reflection from surfaces with special emphasis on the effect of surface roughness both on the ...

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron diffraction patterns verified that bulk porous silicon is still a ...

International Nuclear Information System (INIS)

The possible surface enrichment of chromium and molybdenum during dissolution of Fe18Cr (110) and Fe18Cr3Mo (110) alloys at constant potentials in the passive region is elucidated by taking into account quantitative information on partial dissolution rates of alloy components as measured by #gamma#-spectrometry and on chemical composition of passivating films as measured by ESCA and AES. When combining results from all methods it is found that chromium under all conditions is enriched in the passivating films. An accumulation of chromium in the alloy is also indicated. For molybdenum, an enrichment in the passive film is observed at -0.2 V (SCE), whereas in the potential interval 0.1 - 0.9 V, the molybdenum enrichment as determined by ESCA and AES is hardly significant. On the other hand, #gamma#-spectrometry gives a clear indication of molybdenum enrichment in both potential. (author).

Energy Technology Data Exchange (ETDEWEB)

Magnetic properties of single crystals of nonstoichiometric fluorides M[sub 1-x]R[sub x]F[sub 2+x] (M = Ca, Sr, Ba; R = Ce, Pr, Nd, Gd, Ho, Er, Tm, Yb; with 0.05 [le] x [le] 0.28) with the fluorite-type structure have been studied for the first time. The magnetic susceptibility was measured using a Faraday balance in the 15-300 K temperature range. The samples are paramagnetic following the Curie-Weiss law. The values of paramagnetic Curie temperatures and effective magnetic moments of rare-earth ions have been found. Deviations of the temperature dependence of magnetic susceptibility from the Curie-Weiss law are observed for some nonstoichiometric fluorides at temperatures ranging from 60 to 85 K. Possible reaons for these deviations are discussed. Measurements of magnetic susceptibility provide an effective technique for a rapid and accurate determination of the concentration of rare-earth ions in nonstoichiometric fluorides.

Science.gov (United States)

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found parameters of the Schottky barrier. Details ...

International Nuclear Information System (INIS)

We show that the morphology and the luminescence properties of ZnO layers produced by magnetron sputtering can be controlled by technological parameters of sputtering, particularly by the ratio of argon to oxygen gases in the gas flow during the growth process. Smooth and flat layers were produced with a high Ar/O ratio, while porous layers with various morphologies were obtained with a low Ar/O ratio. The layers produced with O/Ar ration equal to 10 exhibit extremely high near-bandgap luminescence intensity even higher in comparison with bulk ZnO single crystals. The free carrier density estimated from the analysis of photoluminescence spectra is also very high in these samples suggesting that these technological conditions promote both optical and electrical activation of the doping Al impurity. The samples grown with high Ar/O ratios exhibit strong visible emission which is controlled by the technological conditions.

International Nuclear Information System (INIS)

Focused ion beam (FIB) milling techniques are presented aiming at the manipulation of both tin dioxide (SnO_2) inverted opals and polystyrene (PS) direct opals. Different SnO_2 opals are considered in order to estimate the regularity of their bulk after the production. A SnO_2 mesoporous monolith is FIB micromachined to make it suitable for optical applications. PS direct opals are structured by FIB milling at different scales. Ordered arrays of PS opals are modified by selectively removing a single sphere. In performing this task, we discuss the effects on the FIB milling due to the gas-assisted enhanced etching and to the binding of the nearest neighbours. Techniques to achieve imaging of PS opals in absence of a conductive coating are also brought up. Furthermore, isolated PS spheres are drilled with or without enhanced etching in order to produce controlled defects on them. The FIB-assisted manipulations we show may find potential applications in the field of ...

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In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of {l_brace}311{r_brace} defects and dislocation loop were observed from ...

International Nuclear Information System (INIS)

Measurements of the Kapitza conductance to liquid helium II across the (100) surface of single crystals of copper are presented. The temperature range of these measurements was 1.6-- 2.1 K. The sample surfaces were subjected to several different treatments. Some surfaces were cleaned by low-energy argon ion bombardment, annealed in an ultrahigh-vacuum system, and preserved under vacuum until purified liquid helium was admitted. Other surfaces were intentionally damaged by machining and/or exposure to the atmosphere. The conductance after these latter treatments was found to be about a factor of three higher than that of the more ideally cleaned and annealed surfaces, and a significant difference in the temperature dependence of the conductance was also observed. Conductances were reproducible for similarly treated surfaces and correlated with surface damage determined by x-ray diffraction. The relationship of these results to the numerous ...

Energy Technology Data Exchange (ETDEWEB)

We have recently developed a high resolution quasielastic neutron scattering spectrometer LAM-80ET by applying mica crystals as analyzers and achieved a resolution of [Delta][epsilon] = 1.3 [mu]eV using the 002 reflection. Single chain dynamics of polyethylene has been investigated below and above the melting temperature T[sub m] (=135degC) to show the feasibility of the mica 002 reflection as the analyzer. It was found that elastic scattering intensity from polyethylene decreases very steeply around the T[sub m]. Quasielastic broadening in the spectrum at Q = 0.082 A[sup -1] is observed only above 210degC, which is 75degC higher than the T[sub m]. From the analysis of the spectra by a curve-fitting method, the width of the quasielastic component was evaluated to be 1.8 [mu]eV at 250degC and the activation energy of the width to be 34 kJ/mol. (author).

Energy Technology Data Exchange (ETDEWEB)

The usual method of introducing engineers to the concept of dislocations and their role in plastic flow is to compare an estimate of the theoretical strength of solid (of order {micro}/30 where {micro} is the shear modulus) and the observed strength of either single crystals ({mu}/10{sup 4}) or practical engineering material such as structural steels where the yield stress in shear is of order {mu}/10{sup 3}. However, if one considers the problem in reverse, one can consider the accumulation of dislocations as an important mechanism by which one can produce engineering materials in which the strength level approaches the theoretical strength. If one assumes that the flow stress can be expressed in terms of te mean free path between stored dislocations or as the square root of the global dislocation density, then one can see the influence of dislocation density in a diagrammatic form. It is clear that the strengthening by dislocation ...

Energy Technology Data Exchange (ETDEWEB)

This paper reports on superconductor-semiconductor-superconductor (S-N-S) weak-link junctions with the normal layer of Si or InSb thin films were prepared by using focused ion beam (FIB), and electrical properties were measured. Whereas InSb thin films on single crystals did not have an intrinsic mobility, S-N-S junction with InSb shows the characteristics of Josephson S-N-S junction. A 200nm-thick film of InSb deposited on MgO had a mobility of 83 cm{sup 2}.V {center dot} s and a carrier density of 6.5 {times} 10{sup 17} cm{sup {minus}3} at 4.2K. The coherence length {xi}{sub n} was computed to be 17 nm from these experimental data, and we obtained critical superconducting current Ic of 100 {mu} A for the S-N-S junction which had a line width of 10{mu} m and a channel length of 20 nm.

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Basic experimental investigations were carried out with an aqueous solution of a mixture of KOH and NaOH for use as an absorbent in absorption heat pumps. Due to its thermophysical properties this mixture allows temperature lifts from evaporator to absorber of more than 75 K (135 F) in a single-stage absorption chiller. Thermophysical and hydrodynamical properties of the solution were measured. Vapor-liquid-equilibrium data and specific heat capacities were determined for concentrations ranging from 35% up to 75% and temperatures up to 200 C (392 F). From these data the enthalpy of the solution was calculated. Additionally the crystallization temperatures, the density, and the viscosity of the solution were determined. The experimental equipment is described. The data are presented as polynomials and diagrams including experimental accuracy. An apparatus was constructed to measure heat and mass transfer coefficients of the absorption process ...

International Nuclear Information System (INIS)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF_2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the UT-MARLOWE ion ...

International Nuclear Information System (INIS)

... structure crystal-phase transformations fluorescence fluorescence spectroscopy

Energy Technology Data Exchange (ETDEWEB)

In this paper we discuss the results of thermoluminescence (TL) studies carried out on freshly quenched crystals of KBr doped with {approx} 50 ppm of Eu{sup 2+} ions which were X-irradiated at room temperature. The TL glow curve of this phosphor material consists of three glow peaks at 355, 376 and 398 K whose intensities increased as a function of X-irradiation time. The TL glow peaks were analyzed by the total curve-fitting method in order to obtain the characteristic parameters; activation energy, pre-exponential factor and kinetic order. The spectral character of the emission recorded during thermoluminescence was found to be the same for all glow peaks and consists of a broad band centered at {approx} 420 nm. It is proposed that the model of the TL process most consistent with our experimental results is one in which the Eu{sup 2+} impurity acts as an electron trap during the irradiation process and that the radiation induced center (partner of an center) and ...

Energy Technology Data Exchange (ETDEWEB)

The magnetic structure of the cubic compound CeAl{sub 2} is incommensurate and double-k. The moments on the two Ce sites describe two elliptical helices of opposed chiralities and lie in the (11-bar0) plane, with their Fourier components m{sup k} close to the [111] direction. Recent symmetry considerations, including for the first time the inversion center of the crystal, have reduced the number of parameters of this structure and have underlined the existence of a phase difference between the projections m{sub x}{sup k}, m{sub y}{sup k} and m{sub z}{sup k} of m{sup k}. Up to now, although many neutron investigations have been carried out on CeAl{sub 2} single crystals, no set of magnetic intensities was available which was large and good enough to check whether this phase difference exists or not. We have measured such a set of data, taking great care of the instrumental resolution in order to avoid unwanted contributions ...

International Nuclear Information System (INIS)

Textured silicon nitride (Si_3N_4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si_3N_4, with emphasis on the anisotropic and abnormal grain growth of #beta#-Si_3N_4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for #beta#-Si_3N_4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the ...

Energy Technology Data Exchange (ETDEWEB)

Positron annihilation experiments on Fe-Cu model dilute alloys of nuclear reactor pressure vessel (RPV) steels have been performed after neutron irradiation in JMTR. Nanovoids whose inner surfaces were covered by Cu atoms were clearly observed. The nanovoids transformed to ultrafine Cu precipitates by dissociating their vacancies after annealing at around 400degC. The nanovoids and the ultrafine Cu precipitates are strongly suggested to be responsible for irradiation-induced embrittlement of RPV steels. Effects of Ni, Mn and P addition on the nanovoid and Cu precipitate formations were also studied. The nanovoid formation was enhanced by Ni and P, but suppressed by Mn. The Cu precipitates after annealing around 400degC were almost free from these doping elements and hence were pure Cu in the chemical composition. Furthermore the Fermi surface of the 'embedded' Cu precipitates with a body centered cubic crystal structure was obtained from two ...

International Nuclear Information System (INIS)

R_2PdSi_3 compounds have been found to exhibit rich magnetic phenomena arising from the interplay between RKKY interaction, crystal electric field effects and geometric frustration due to the derived hexagonal AlB_2 structure. The observed crystallographic superstructure further complicates the CEF level scheme. Inelastic neutron scattering measurements on single crystals of Tm_2PdSi_3 and Er_2PdSi_3 have been performed at the cold triple axis spectrometer PANDA in FRM-II. Both compounds order antiferromagnetically at T_N=7 K and 2.1 K respectively; Er_2PdSi_3 undergoes a second phase transition at T_2=2 K. Several low lying CEF excitations (below 10 meV) were observed. The intensity of the lowest excitation show strong directional dependence (in HK0 plane for Er_2PdSi_3 and in HHL plane for Tm_2PdSi_3), from which the details of the transitional matrix could be deduced. Measurements in magnetic fields up to 13 T show ...

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In order to optimize the performance of molecular organic electronic devices it is important to study the intermolecular density of states and charge transport mechanisms in the environment of crystalline organic material. Using this approach in Field Effect Transistors (FETs) we show that material purification improves carrier mobility and decreases density of the deep localized electronic state. We also report a general exponential energy dependence of the density of localized states in a vicinity of the mobility edge (Fermi energies up to approx7 times higher than the thermal energy (kT)) in a variety of the extensively purified molecular organic crystal FETs. This observation and the low activation energy of the order of approxkT suggest that molecular structural misplacements of the sizes that are comparable with thermal molecular modes rather than impurity deep traps play a role in formation of these shallow states. We find that the charge carrier mobility in ...

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In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

International Nuclear Information System (INIS)

Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected.

Energy Technology Data Exchange (ETDEWEB)

Rhenium is technetium`s third row congener and exhibits many of the chemical properties that technetium displays. Theoretically, a Re-PhAT complex will be isostructural with the {sup 99m}Tc PhAT complexes that have been prepared for use as brain imaging agents. A series of neutral rhenium(V) oxo complexes was synthesized by the reaction of ReOBr{sub 4}{sup {minus}} with diamino-thiol-thioether ligands of the type (RSC(CH{sub 3}){sub 2})CH{sub 2}NH(o-C{sub 6}H{sub 4})NHCH{sub 2}C(CH{sub 3}){sub 2}SH. The complexes were characterized by IR, UV/visible, and {sup 1}H and {sup 13}C NMR spectroscopy and by fast-atom-bombardment mass spectroscopy. The single-crystal X-ray structure determination on two of the complexes, where R = CH{sub 2}CH{double_bond}CH{sub 2} and CH{sub 2}CH{sub 2}-CH{sub 3}, showed them to consist of a square pyramidal Re{sup V}ON{sub 2}S{sub 2} core. ReO[CH{sub 2}{double_bond}CHCH{sub 2}SC(CH{sub 3}){sub 2}CH{sub 2}N(o-C{sub 6}H{sub 4})NCH{sub ...

Science.gov (United States)

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Science.gov (United States)

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International Nuclear Information System (INIS)

... bf3 counters data multi-channel analyzers multivibrators neutron spectrometers