Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to ...

Science.gov (United States)

A general model for the analysis of metal-semiconductor solar cells is presented. The model takes into account the cell optical properties, carrier recombination effects, semiconductor minority-carrier properties, series resistance, cell thickness, and active surface area. Numerical methods are used to solve the appropriate continuity equations and hence compute the photocurrent density under AMO conditions. The operation of the model is demonstrated using p- and n-type Si and GaAs with Au being taken as the barrier metal. Calculations are presented showing the effect on solar energy conversion efficiency of surface recombination velocity, barrier height, minority-carrier lifetime, barrier metal thickness, collecting grid configuration, and cell thickness. A comparison of practical and computed data for the Au/n-GaAs system yields good agreement. (AIP)

Energy Technology Data Exchange (ETDEWEB)

A multi-spectral Schottky barrier infrared detector array in which individual pixels of radiation from a remote radiating object are detected by two or more Schottky barrier infrared radiation detectors each having a different spectral response so as to provide a ''color'' discrimination for the array.

Energy Technology Data Exchange (ETDEWEB)

We demonstrate control and improvement of charge injection in organic electronic devices by utilizing self-assembled monolayers (SAMs) to manipulate the Schottky energy barrier between a metal electrode and the organic electronic material. Hole injection from Cu electrodes into the electroluminescent conjugated polymer poly[2-methoxy,5-(2{sup {prime}}-ethyl-hexyloxy)-1,4-phenylene vinylene] was varied by using two conjugated-thiol based SAMs. The chemically modified electrodes were incorporated in organic diode structures and changes in the metal/polymer Schottky energy barriers and current{endash}voltage characteristics were measured. Decreasing (increasing) the Schottky energy barrier improves (degrades) charge injection into the polymer. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy], 5-(2{prime}-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM{close_quote}s) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM{close_quote}s on the Ag surface potential. {ital Ab} {ital initio} Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of ...

Science.gov (United States)

Silicon carbide (SiC) based electronic devices are of great importance for applications under the condition of high temperature, high power and high radiation. Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, the electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. Schottky diodes were made by depositing ultra-thin palladium films onto a silicon carbide substrate. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of 300-673K. Palladium diffusion into SiC and the formation of palladium silicides were observed at room temperature and became significant at 300^oC and higher temperature. ...

Science.gov (United States)

A 5 GHz GaAs monolithic astable multivibrator-type voltage-controlled oscillator has been developed. The monolithic oscillator uses 2 micron long self-aligned TiW-silicide gate MESFETs as well as GaAs Schottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X-band oscillation frequency can be obtained with 1 micron long gate FET and low loss resonance inductors.

Energy Technology Data Exchange (ETDEWEB)

Reactively sputtered tantalum nitride (Ta/sub 2/N) has been investigated as a diffusion barrier between Pd/sub 2/Si and aluminum and CoSi/sub 2/ and Al. Ta/sub 2/N is found to be an excellent matallurgical diffusion barrier for the two systems up to 555 /sup 0/C, with no intermixing observed in Rutherford backscattering and Auger electron spectroscopic studies. Schottky barrier devices n-Si/Pd/sub 2/Si/Ta/sub 2/N/Al were excellent and showed no deterioration after annealing at 500 /sup 0/C. However, similar devices with CoSi/sub 2/ contacts and Ta/sub 2/N barrier showed a creation of high contact resistance between the silicide and the as-deposited nitride.

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

International Nuclear Information System (INIS)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence ...

Energy Technology Data Exchange (ETDEWEB)

A complete theory for waveguide laser modes for oversized metallic and dielectric waveguides with circular cross section has been developed for the submillimeter wavelength region. The experimental investigations have been done by a submillimeter heterodyne technique for the first stage using a Schottky barrier diode in an open structure mixer.

Science.gov (United States)

The redistribution of implanted As and Sb following metal-silicide formation of Pt, Pd, and Ni has been studied. The phases of the silicides used were PtSi, Pd/sub 2/Si, and NiSi. Investigations with Rutherford backscattering analysis showed that after the formation of the silicides, the Sb was always found in the silicide layer near the surface of the samples, whereas PtSi and Pd/sub 2/Si caused a partial rejection of As for implanted doses of 2 x 10/sup 15/ cm/sup -2/ and higher. No rejection of As was found after the formation of NiSi. The results are discussed in terms of solid solubilities and impurity-metal compound formation. The data presented has implications in the fabrication of Ohmic contacts and the adjustments of the heights of Schottky barriers on silicon.

International Nuclear Information System (INIS)

Point contact Josephson junctions can function as millimeter wave heterodyne mixers with conversion gain. The best results achieved thus far show a single sideband conversion gain of 1.3 and a mixer contribution to the system noise temperature of 54"0K. Both of these results are approximately 5 times better than the best published figures for cooled Schottky barrier diode mixers operated at the same frequency. The measured noise for a variety of junctions can be expressed as a universal function of the normalized rf frequency #OMEGA# = h#omega#/2eI/sub c/R. It is about a factor 2 larger than the calculated noise arising from the thermal noise in the junction shunt resistance, R. The noise calculation was done for the resistively shunted junction model using an analog junction simulator.

British Library Electronic Table of Contents (United Kingdom)

In this work the DC and AC characteristics for metal-LB film-metal structures deposited by a standard Langmuir-Blodgett film deposition technique are investigated. The conduction mechanism has been studied for a thin film structure in which a calix[4]arene substituted with carboxylic acid groups has been deposited alternately with a calix[4]arene molecule substituted with amine groups. This LB film structure shows a typical insulating behaviour for low voltage values and the Schottky effect becomes dominant when the voltage increases. The conductivity at low voltage values was found to be 1.34x10^-^1^3Scm^-^1. The height of the potential barrier was determined to be 1.65eV for this alternate layer LB film system.

International Nuclear Information System (INIS)

The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.

Science.gov (United States)

The formation and properties of Pd{sub 2}Si formed by focused ion beam implantation of Pd ions into Si is presented in this thesis. An extensive microstructural study using transmission electron microscopy was undertaken and the as-implanted as well as annealed microstructure is shown. Results of other analysis techniques such as Rutherford back scattering and secondary ion mass spectrometry etc. are also presented. Kinetic information on the growth of Pd{sub 2}Si obtained by both microstructural and resistance measurements indicates that the activation energy for growth of the silicide is around 0.36 to 0.39 eV. This can be compared with the normally reported value of 1.5 eV for Pd{sub 2}Si formed by annealing thin film Pd on Si. The growth of the silicide was found to follow t{sup 1/2} kinetics. Microstructural observation of the as-implanted samples showed extensive in-situ formation of Pd{sub 2}Di and also surprisingly few defect structures. A heat transfer model for the ...

Energy Technology Data Exchange (ETDEWEB)

Pd/sub 2/Si layers produced by evaporation or sputtering onto silicon substrates were examined by high resolution electron microscopy, microdiffraction, X-ray, energy loss and Auger spectroscopy. The Si-Pd/sub 2/Si interfaces produced by evaporation were in all cases rougher and more polycrystalline than those produced by sputtering. X-ray microanalysis showed the predictable variation in palladium distribution across the interface but quantification did not produce the expected palladium-to-silicon ratios, primarily because of probe broadening and X-ray-induced fluorescence. Energy loss spectra showed plasmon energy shifts and changes in Si L edge shape due to bond formation with palladium. Auger data provided evidence for a small amount of oxygen at the Si-Pd/sub 2/Si interface. Electrical measurements of the ideality factor for Schottky barriers made from the materials produced higher values for the rougher evaporation-formed interfaces ...

Energy Technology Data Exchange (ETDEWEB)

The study of passive films formed on a nickel base alloy type Inconel 600 is performed by capacitance measurements (Mott-Schottky approach). This research is supported by the passivation study of the alloying elements Ni, Cr, Fe and high purity alloys Ni-Cr, Ni-Fe, Ni-Cr-Fe. The results obtained show that the capacitive behaviour of the Inconel 600 in the passive state is similar to that on a p-n heterojunction to which a barrier zone of nickel oxide is added. The individual or combined action of alloying elements on the development of this kind of electronic structure is discussed. (authors). 5 refs., 6 figs.

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with room-temperature hole ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Science.gov (United States)

Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the defect density in doped and compensated a-Si:H is determined by the ...

Science.gov (United States)

The formation of palladium silicides near the interface may decrease hydrogen solubility at the effective metal/semiconductor ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

We have observed resonant changes in the current-voltage characteristics of miniband semiconductor superlattices when the Bloch frequency is resonant with a terahertz field and its harmonics: the inverse Bloch oscillator effect. The resonant feature consists of a peak in the current which grows with increasing laser intensity accompanied by a decrease of the current at the low bias side. The peak position moves linearly with the laser frequency. When the intensity is increased further the first peak starts to decrease and a second peak at about twice the voltage of the first peak is observed due to a two photon resonance. At the highest intensities we observe up to a four photon resonance. A superlattice is expected to show negative differential conductance due to the strong nonparabolicity of the miniband. In this situation the carriers should undergo Bloch oscillations with a frequency {omega}{sub B} = eEd/h. Transient Bloch oscillations of photo excited carriers have been observed ...

Energy Technology Data Exchange (ETDEWEB)

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs solar cell on poly-Ge and to improve our ...

CERN Document Server

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2p sub 3 sub / sub 2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga sub 2 O sub 3 powder were used. A separate study aiming the identification of the GaAs surface oxides formed on the GaAs surface during and after ...

Energy Technology Data Exchange (ETDEWEB)

Effective barrier pillar design is essential for safe and productive underground coal mining. This U.S. Bureau of Mines report presents an overview of available barrier pillar design methodologies that incorporate sound engineering principles while remaining practical for everyday usage. Nomographs and examples are presented to assist in the determination of proper barrier pillar sizing. Additionally, performance evaluation techniques and criteria are included to assist in determining the effectiveness of selected barrier pillar configurations.

Energy Technology Data Exchange (ETDEWEB)

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

Science.gov (United States)

and palladium silicides (Pd,Si) with a total. AES intensity ratio of Pd to Si of 35/65. Scanning Electron Microscopy. (SEM') of the Pd region shows that ...

Energy Technology Data Exchange (ETDEWEB)

This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

KoreaScience (Korea)

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International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

Energy Technology Data Exchange (ETDEWEB)

The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been observed. At last has ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

A doubly Q-switched laser with both an acousto-optic (AO) modulator and a GaAs saturable absorber can obtain a more symmetric and shorter pulse with high pulse peak power, which has been experimentally proved. The key parameters of an optimally coupled doubly Q-switched laser with both an AO modulator and a GaAs saturable absorber are determined, and a group of general curves are generated for what we believe is the first time, when the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined, and the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density as well as the influence of the AO Q-switch are considered. These key parameters include the optimal normalized coupling parameter, the optimal normalized GaAs saturable absorber parameters, and the normalized parameters of the AO Q-switch, which can maximize ...

Energy Technology Data Exchange (ETDEWEB)

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the ...

International Nuclear Information System (INIS)

A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

International Nuclear Information System (INIS)

The effect of Mo addition as an alloying element to stainless steel alloys is investigated by capacitance (Mott Schottky approach), and photoelectrochemistry measurements. Complementary studies were made using Auger electron spectroscopy and X-ray photoelectron spectroscopy. The Mott-Schottky approach and the photoelectrochemical studies showed that the presence of Mo as an alloying element affects the semiconductive properties of the oxide films. The analytical results have shown that the oxide films formed on stainless steels are composed by an external Fe rich region and an inner Cr rich region. No significant amount of Mo was found in the outer layers of the film. The presence of Mo leads to an increase of the chromium content in the inner layers of the film, although without increasing the film thickness. (orig.)

Energy Technology Data Exchange (ETDEWEB)

GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup 2}-area GaAs cell on ...

Science.gov (United States)

Direct coupljng between Al and Au metal]jzations can result in an increase in gate resistance due to a metallurgical reaction. (purple plague). An RF life test on ...

Energy Technology Data Exchange (ETDEWEB)

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. A proposed structure for the GaInAsP/Ge cascade cell is also given.

International Nuclear Information System (INIS)

Using the slow electrons spectrometer one can get information on the surface structure, its element composition, chemical bonds, adsorption phenomena, electron state density and surface oscillation. We have developed the methods and created the apparatus that makes it possible to investigate the electron backscattering by solid surface. We have studied the electron scattering by the polycrystalline and monocrystalline. GaAs surface in the energy range of 0 to 9 eV. The FWHM of electron energy distribution function was 70 meV. (author).

Energy Technology Data Exchange (ETDEWEB)

CdTe/SnTe heterojunctions, prepared by EDRI (evaporation-diffusion en regime isotherme) and CSVT (close spaced vapour transport) techniques, have a spectral response in a wide wavelength range (0.3 - 1.5 ..mu..m) which exhibits two distinct bands, corresponding to carrier generation in each material of the couple. Experimental results are interpreted in terms of a Schottky diode model. (orig.).

UK PubMed Central (United Kingdom)

SUMMARYSmall bowel epithelium is at the frontline of intestinal barrier function. Restitution is considered to be the major determinant of epithelial repair as function recovers...Full Text Available

UK PubMed Central (United Kingdom)

Silver-haired bat rabies virus (SHBRV) infection induces a strong virus-specific immune response in the periphery of the host, but death is common due to the failure to open the blood-brain barrier...Full Text Available

International Nuclear Information System (INIS)

Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al_0_._2_0Ga_0_._8_0InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of different barrier configurations as well as the incorporation of additional tunnel barriers on the optical properties has been investigated. The confinement energy between the dot barrier and the surrounding barrier layers, which is the sum of the band discontinuities for the valence and the conduction bands, was chosen to be approximately 190 meV by using Al_0_._5_0Ga_0_._5_0InP. In combination with 2 nm thick AlInP tunnel barriers, the internal quantum efficiency of these barrier configurations can be increased by up to a factor of 20 at elevated temperatures with respect to quantum dots without such layers. (copyright 2009 WILEY-VCH Verlag GmbH and Co. ...

Energy Technology Data Exchange (ETDEWEB)

The development of structural barriers for nuclear waste packages involves selection of candidate materials, their screening by mechanical and corrosion testing, rigorous accelerated testing, and evaluation and comparison with other package elements. This document presents results from work conducted on titanium and ferrous alloys.

International Nuclear Information System (INIS)

... Ukraine Stockel, J. Hron, M. Dejamae, R. Bilykova, O. Brotankova, J.

Science.gov (United States)

... Title : Mental Health and Resilience: Soldiers' Perceptions about Psychotherapy, Medications, and Barriers to Care in the United States Military. ...

International Nuclear Information System (INIS)

The analysis of plasma density oscillations and ExB rotation of U-3M torsatron plasma was performed by UHR correlation reflectometry during the transport barrier formation. The connections between these characteristics and the phenomenon of inner and edge transport barrier formation were determined experimentally at the different values of HF power and plasma density.

Energy Technology Data Exchange (ETDEWEB)

A system and method for generating global asynchronous signals in a computing structure. Particularly, a global interrupt and barrier network is implemented that implements logic for generating global interrupt and barrier signals for controlling global asynchronous operations performed by processing elements at selected processing nodes of a computing structure in accordance with a processing algorithm; and includes the physical interconnecting of the processing nodes for communicating the global interrupt and barrier signals to the elements via low-latency paths. The global asynchronous signals respectively initiate interrupt and barrier operations at the processing nodes at times selected for optimizing performance of the processing algorithms. In one embodiment, the global interrupt and barrier network is implemented in a scalable, massively parallel supercomputing device ...

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a ...

Energy Technology Data Exchange (ETDEWEB)

An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for terrestrial as well as for space ...

CERN Document Server

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of approx 1nA and a ...

Energy Technology Data Exchange (ETDEWEB)

The temperature effect on corrosion behaviors of PbCaSnCe alloy in 4.5 M H{sub 2}SO{sub 4} solution was investigated by using potentiodynamic curve, electrochemical impedance spectra (EIS), Mott-Schottky plot and photocurrent response methods. It was found that PbCaSnCe alloy was in passive state in sulfuric acid solution, a passive film can be formed on alloy surface. The compositions of passive films formed at 0.9 V for 2 h under different temperatures were detected by X-ray photoelectron spectroscopy (XPS). The results showed that the film resistance and the transfer resistance decreased with the increment of the solution temperature. Mott-Schottky analysis and the photocurrent response revealed that the passive film exhibited n-type semi-conductive character, the donor density of the passive film decreased with increasing the solution temperature. Photocurrent response revealed that the photocurrent increased with increasing temperature. ...

Science.gov (United States)

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

Energy Technology Data Exchange (ETDEWEB)

Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.

International Nuclear Information System (INIS)

Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected.

Energy Technology Data Exchange (ETDEWEB)

Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.

International Nuclear Information System (INIS)

Deep level effects in GaAs MOSFET have been characterised in the ohmic channel using DLTS, low frequency excess noise and dispersion technique. An isothermal multi exponential curve fitting method has been devised and implanted into the DLTS system. Multi exponential curve fitting method used to decompose a multi exponential transient into its constituents so that the peak signature can be better characterised for the case whereas several peaks are closely spaced. Low frequency excess noise and dispersion techniques also confirm the trap in signature of the same traps observed in the DLTS measurements. (author)

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

British Library Electronic Table of Contents (United Kingdom)

Oxidation of propylene with oxygen, air and a mixture of nitrogen?oxygen in a barrier discharge is investigated. The selectivity towards formation of propylene oxide in pure oxygen is shown to be as high as 45 wt% and the propylene conversion ratio is found to be 12.9 wt%. In the oxidation with air, the propylene oxide selectivity is 23 wt%, while the conversion is 7.5 wt%. The values of propylene conversion and selectivity towards formation of propylene oxide in a barrier discharge are consistent with those obtained by the thermocatalytic methods for production of propylene oxide.

International Nuclear Information System (INIS)

The use of uranium mill tailings in the foundations of dwellings has resulted in indoor radon progeny concentrations and gamma exposures in excess of levels presently allowed for the general public. An account is given of the applications of an epoxy coating on the indoor faces of the concrete foundations of three buildings in Grand Junction, Colorado. Epoxy barriers were shown to be effective for preventing radon influx into structures. Gamma exposure rates must be analyzed to ensure that buildup behind the barrier will not introduce an unacceptable gamma exposure level. The use of a sealant is especially economical in situations where structural integrity may be jeopardized by physical removal of uranium mill tailings. (author).

British Library Electronic Table of Contents (United Kingdom)

Uranium has varying degrees of oxidation (+4 and +6) and is responsive to changes in the redox potential of the environment. It is deposited at the reduction barrier with the participation of biota and at the sorption barrier under oxidative conditions. Iron (hydr)oxides are the strongest sorbents of uranium. Uranium, being an element of medium biological absorption, can accumulate (relative to thorium) in the humus horizons of some soils. The high content of uranium in uncontaminated soils is most frequently inherited from the parent rocks in the regions of positive U anomalies: in the soils developed on oil shales and in the marginal zone of bogs at the reduction barrier. The development of nuclear and coal-fired power engineering resulted in the environmental contamination with uranium....

UK PubMed Central (United Kingdom)

The primary determinants of pulmonary disease are environmental. The same thinness and delicacy of the air-blood barrier which allows rapid exchange of oxygen and carbon dioxide also reduce its effectiveness...Full Text Available

International Nuclear Information System (INIS)

Research was performed to assess the feasibility of barrier membrane substances, for use within mining or associated high risk environments, in restricting the diffusion transport of radon gas quantities. Specific tests were conducted to determine permeability parameters of a variety of membrane materials with reference to radon flow capabilities. Tests were conducted both within laboratory and in-situ emanation environments where concentrations and diffusion flows of radon gas were known to exist. Equilibrium radon gas concentrations were monitored in initially radon-free chambers adjacent to gas sources, but separated by specified membrane substances. Membrane barrier effectiveness was demonstrated to result in reduced emanation concentrations of radon gas within the sampling chamber atmosphere. Minimum gas concentrations were evidenced where the barrier membrane material was shown to exhibit lowest radon permeability ...

International Nuclear Information System (INIS)

An analysis system for the long-term mechanical behavior of barrier materials (MACBECE: Mechanical Analysis system considering Chemical transitions of BEntonite-based and CEment-based materials) was developed in order to improve the reliability of the evaluation of the hydraulic field which is one of the important environmental conditions in the safety assessment of the TRU waste disposal. MACBECE is the system that calculates the deformation of barrier materials using their chemical property changes as inputs, and subsequently calculates their hydraulic conductivity taking both their chemical property changes and deformation into consideration. By using MACBECE, the long-term deformation and the transition of hydraulic field for the round-type disposal cavities were evaluated, assuming some sets of chemical evolution data as input. Based on the analysis result, it is considered that the influence of the long-term deformation of the ...

Energy Technology Data Exchange (ETDEWEB)

The first task for remediation actions against underground contamination should be an effective confinement of contamination plumes. Some conventional barrier techniques have been already proved to have sufficient features to prevent such plumes from extending horizontally, but further technical development is required to construct a bottom barrier to stop plumes going deeper. Superjet{sup {trademark}} is a powerful version of the jet grouting method (1) and is characterized by prompt construction of an underground cement pile when exceeds 5 meter in diameter. Its application to a case of construction of underground lapping beams has shown satisfactory completion to sustain underground open space. The results and some basic experiments indicate that this method is technically feasible to build a bottom barrier with a certain mechanical strength.

International Nuclear Information System (INIS)

1982. p. 173-175. Israel Eisen, Y. Engler, G. Ovadia, E. Shamai, Y. Israel

Energy Technology Data Exchange (ETDEWEB)

The article is the second part of a review dealing with latest developments in the area of solar cell technologies and application. Physical principles, design and efficiency as well as advantages and disadvantages of GaAs- and CdS-solar cells are described. Power generation solar cell systems with voltage converters, combined solar cell/solar collector systems and thermoelectric solar systems are presented in the second part of the article.

Energy Technology Data Exchange (ETDEWEB)

As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type ...

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Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

International Nuclear Information System (INIS)

Soil placed over any sealant/barrier system can provide a protective mantle if the soil is not lost by erosion. Vegetation is an attractive choice for controlling erosion because it can provide an economical self-renewing cover that serves to reduce erosion by both wind and water. The objective of this research and development effort is to select and test vegetation strategies, including the choice of species and methods for revegetation that are compatible with sealant/barrier systems and are suited to soils and climates at inactive uranium mill tailings sites.

Energy Technology Data Exchange (ETDEWEB)

The Sacramento Municipal Utility District is developing a number of demonstration projects using geothermal heat pumps. This paper discusses some of the barriers and issues that have emerged over the past two years. The most important barriers are: regulatory impediments; high first cost; and a lack of local design and installation infrastructure.

International Nuclear Information System (INIS)

A simple model is described to simulate kinetic processes in dielectric barrier discharges for O_2/NO_x mixtures. A threshold of ozone production found experimentally is confirmed by the calculations of this modeling, and the underlying chemical reaction mechanisms are discussed. It is also found that the effects of diffusion processes in the period of the lifetime of O atoms are not important to micro-discharge channels with a large radius, i.e. larger than 150 #mu#m

Science.gov (United States)

A "hemispheres-in-cell" geometry is provided for prediction of colloid retention during transport in porous media. This new geometry preserves the utilities provided in the Happel sphere-in-cell geometry; namely, the ability to predict deposition for a range of porosities, and representation of the influence of neighboring collectors on the fluid flow field. The new geometry, which includes grain to grain contact, is justified by the eventual goal of predicting colloid deposition in the presence of energy barriers, which has been shown in previous literature to involve deposition within grain to grain contacts for colloid:collector ratios greater than approximately 0.005. In order to serve as a platform for predicting deposition in the presence of energy barriers, the model must be shown capable of quantitatively predicting deposition in the absence of energy barriers, which is a requirement that was not met by previous ...

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack ...

International Nuclear Information System (INIS)

Moss-Schottky plots and photoelectrochemical measurements were made on films formed at different potentials on AISI 304 stainless steel in a borate/boric acid solution, pH 9.2. The results allowed the determination of the semiconductive properties and band structure of the films, which account for the existence of two kinds of films depending on the formation potential. For potentials below 0 V (SCE), the results point out for a film with an inverse spinel structure constituted by Cr-substituted magnetite with two donor levels. Above 0 V only one donor level is detected, which should be Fe"2 "+ on tetrahedral sites.

International Nuclear Information System (INIS)

Passive films, formed on annealed and cold worked AISI 304 stainless steel in hot chloride media, were examined using polarization resistance and impedance measurements. The obtained results show the influence of cold work on film conductivity, which can be correlated to conditions of susceptibility to stress corrosion cracking. Capacitance measurements, using the Mott-Schottky approach, revealed that a change from n to p type semi-conductivity is associated to susceptible conditions with an increase in the doping density estimated for cold worked samples in the presence of chloride. It is assumed that p-type semi-conductivity of the passive film together with the position of the flat band potential has a strong influence on the dissolution processes at the corrosion potential. Based on this analysis the influence of plastic deformation, at the dislocation scale, is discussed. (authors)

Energy Technology Data Exchange (ETDEWEB)

Passive films formed on Alloy 690 in different pH solutions at high temperatures were studied by potentiodynamic polarization, Auger electron spectroscopy, thermodynamic diagrams and the Mott-Schottky relation. The chemical compositions and electronic structures of the passive films were found to be strongly pH-dependent. In alkaline solutions, a secondary passivation was clearly observed on potentiodynamic polarization curves. The passive films were a mixture of Cr{sub 2}O{sub 3} and FeCr{sub 2}O{sub 4} below the flat band potential of nickel oxide and were NiFe{sub 2}O{sub 4} above this potential. Electronic structure models, describing the electrochemical properties of the passive films, are proposed and discussed.

Science.gov (United States)

The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.

Energy Technology Data Exchange (ETDEWEB)

Passive films formed on Alloy 690 in high-temperature alkaline environments were investigated by potentiodynamic polarization, X-ray photoelectron spectroscopy, transmission electron microscopy and Mott-Schottky approach. Passive current density and donor density of the passive films increase with increasing temperature, due to increased diffusion rates of metallic ions and dehydration of hydroxide phases. The passive films show a duplex structure including an inner layer of fine-grained Cr oxide or spinel oxide and an outer layer of Ni-Fe spinel oxide and Ni hydroxide. A growth model of the passive films on Alloy 690 in high-temperature alkaline environments is proposed and discussed.

International Nuclear Information System (INIS)

In this work passive films formed in AISI 304 stainless steel were envisaged as semiconductors and studied by means of photoelectrochemistry and Mott-Schottky plots. The passive films were potentiostatically formed at different potentials (0.2-0.8V) in a basic borate/boric acid solution without and with addition of NaCl (0.5 and 1g/l) and at various temperatures in the range 8-60"oC. The influence of these parameters on the photocurrent, quantum efficiency, bandgap energy and density of charge carriers was determined. The results show that the experimental conditions at which the films are formed influence the semiconductive properties of the film, which seem to be related to the higher or lower stability of the film. An Arrhenius type of relationship was also found between the density of charge carriers and temperature, leading to the determination of an activation energy. (author) 13 refs., 7 figs.

International Nuclear Information System (INIS)

This document is a summary of the available information on the thermo-hydro-mechanical properties of the bentonite barrier of a high-level radioactive waste repository and of the processes taking place in it during the successive repository operation phases. Mainly the thermal properties, the volume change processes (swelling and consolidation), the permeability and the water retention capacity are analysed. A review is made of the existing experimental knowledge on the modification of the these properties by the effect of temperature, water salinity, humidity and density of the bentonite, and their foreseen evolution as a consequence of the processes expected in the repository. The compiled evolution refers mostly to the FEBEX (Spain), the MX-80 (USA) and the FoCa (France) bentonite, considered as reference barrier materials in several European disposal concepts. (Author) 102 refs.

International Nuclear Information System (INIS)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10"1"7 to 3 x 10"1"9 cm"-"3. (Author).

International Nuclear Information System (INIS)

Defect cluster formation in 14-MeV neutron irradiated polycrystalline copper has been observed by transmission electron microscopy (TEM) and correlated with the increase in yield stress. The measurements indicate that the radiation hardening component of the yield strength in polycrystals is not directly additive to the unirradiated yield strength. A transitional behavior was observed for radiation hardening at low fluences, which produces an anomalous variation of the defect cluster barrier strength with fluence. The behavior is attributed to the effect of grain boundaries on slip band transmission. An upper limit for the room temperature barrier strength of defect clusters in neutron-irradiated copper was determined to be #alpha#=0.23. (orig.).

International Nuclear Information System (INIS)

Water-based epoxy sealants were examined during a 2-year period to determine their effectiveness as barriers to radon release in uranium mines. Radon emanation rates from uranium ore samples were monitored for extended periods in the laboratory before and after sealant application. Reduction of radon flux due to the coating of lab samples was approximately 80 percent. Test chambers in a dormant uranium mine were monitored to determine both short and long-term barrier effectiveness. These field studies of the sealants indicated reductions greater than 50 percent relatively soon after application and nearly 75 percent more than 1 year later. An unexpected complication to early monitoring in the form of a large radon emanation increase, believed due to added moisture, is discussed.

Energy Technology Data Exchange (ETDEWEB)

Radon proof barriers are used for lowering of radon transport from the soil into the house and the determination of the radon diffusion coefficient is an important parameter to be determined in order to design the minimal thickness of the radon proof insulation. A method has been developed in our laboratory by using modified Lucas cells connected to a radon source and tightly closed onto the top by the tested membranes whose radon diffusion coefficients are being measured. Solving the time-dependent differential equation for radon diffusion in the membrane for well-defined experimental conditions the effective radon diffusion coefficient of the insulating material can be evaluated by comparing the radon concentration decrease in the cell for the first hours with the well-known radioactive decay. First results obtained in several preliminary tests carried out with a parafilm M barrier and two polyethylene membranes are shown in this paper.

Energy Technology Data Exchange (ETDEWEB)

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article ...

Energy Technology Data Exchange (ETDEWEB)

Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

Energy Technology Data Exchange (ETDEWEB)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K{sub {alpha}} X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K{sub {alpha}} X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the conditions necessary ...

Energy Technology Data Exchange (ETDEWEB)

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

International Nuclear Information System (INIS)

Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that by N2 plasma.

Energy Technology Data Exchange (ETDEWEB)

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs reactions studied are ...

Energy Technology Data Exchange (ETDEWEB)

A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.

International Nuclear Information System (INIS)

The use of workstations, controllers or embedded systems and their applications have become much more relevant than previously. PC-based systems, a cooker programmer, applications of, for example, Prolog machines, Unix and Ada papers, Robotics and Automation are typical examples of this. The three keynote addresses of this symposium have as their subjects the most spectacular microcomputer fields and are presented by leading experts. The papers presented cover most of the traditional interests of Euromicro. Special emphasis is given to contributions on the use of workstations and personal computers, on RISC and GaAs and on transputers.

Energy Technology Data Exchange (ETDEWEB)

We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and after post-growth thermal annealing. In ...

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit current densities are due to short diffusion lengths, we have demonstrated a ...

Energy Technology Data Exchange (ETDEWEB)

Preliminary results are presented from a field study to evaluate the relative hydrologic performance of various landfill capping technologies installed by the Los Alamos National Laboratory at Hill Air Force Base, Utah. Four cover designs (two Los Alamos capillary barrier designs, one modified EPA RCRA design, and one conventional design) were installed in large lysimeters instrumented to monitor the fate of natural precipitation between 01 January 1990 and 20 September 1993. After 45 months of study, results showed that the cover designs containing barrier layers were effective in reducing deep percolation as compared to a simple soil cap design. The RCRA cover, incorporating a clay hydraulic barrier, was the most effective of all cover designs in controlling percolation but was not 100% effective. Over 90% of all percolation and barrier lateral flow occurred during the months of February through May ...

UK PubMed Central (United Kingdom)

1. The short duration cerebrovascular perfusion method for measuring permeability of the blood-brain barrier has been adapted to measuring transport into the retina. 2. The method has been characterized...Full Text Available

Science.gov (United States)

This study evaluated whether differences in design of 3-dimensional polylactic acid barriers (EPi-Guide and Guidor) would influence hard tissue results in the treatment of Grade II furcations in humans. A multicenter study was conducted, using 40 patients with moderate to advanced bilateral chronic adult periodontitis of the mandibular first or second molars. After flap access, debridement, and root preparation, surgical bone level measurements were taken and membranes were placed on a random basis. Surgical reentry occurred at 1 year. Data collected from all 3 investigative centers were pooled and analyzed using an analysis of variance appropriate for a counterbalancing design. Both barrier materials resulted in significant gains of attachment level and defect reduction. The composite reduction in the vertical component of the osseous defects was greater in the sites treated with Epi-Guide as compared to those treated with Guidor; the ...

UK PubMed Central (United Kingdom)

BackgroundWhile the gene flow in some organisms is strongly affected by physical barriers and geographical distance, other highly mobile species are able to overcome such constraints....Full Text Available

UK PubMed Central (United Kingdom)

Purpose.The cornea is protected by apical hydrophilic transmembrane mucins and tears. In pathologic states the mucin barrier is disrupted, creating potential for meibomian lipids...Full Text Available

UK PubMed Central (United Kingdom)

Though central to our understanding of how roots perform their vital function of scavenging water and solutes from the soil, no direct genetic evidence currently exists to support the foundational model...Full Text Available

UK PubMed Central (United Kingdom)

The pathogenesis of Pseudomonas aeruginosa disseminated infections depends on bacterial interaction with blood vessels. We have hypothesized that in order to traverse the endothelial barrier, bacteria...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundSeveral aromatic amines (AA) could cause bladder cancer and are an occupational hygiene problem in the workplace. However, little is known about the percutaneous absorption...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

This chapter provides a glimpse of student affairs assessment at Northern Arizona University including a specific example of assessment, tips to implementing assessment at your institution, and barriers encountered when implementing the process at Northern Arizona University.

UK PubMed Central (United Kingdom)

Genes of the S100 fused-type protein (SFTP) family are clustered within the epidermal differentiation complex and encode essential components that maintain epithelial homeostasis and barrier functions....Full Text Available

UK PubMed Central (United Kingdom)

BackgroundMethamphetamine (METH), an addictive psycho-stimulant drug with euphoric effect is known to cause neurotoxicity due to oxidative stress, dopamine accumulation and glial...Full Text Available

UK PubMed Central (United Kingdom)

PurposeA major obstacle in glioblastoma (GBM) therapy is the restrictive nature of the blood-brain barrier (BBB). Convection-enhanced delivery (CED) is a novel method...Full Text Available

UK PubMed Central (United Kingdom)

Tick-borne encephalitis (TBE) virus causes severe encephalitis with serious sequelae in humans. The disease is characterized by fever and debilitating encephalitis that can progress to chronic illness...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundOnline technology is a promising resource for conducting clinical research. While the internet may improve a study's reach, as well as the efficiency of data collection,...Full Text Available

UK PubMed Central (United Kingdom)

To maximize energy efficiency, gas turbine engines used in airplanes and for power generation operate at very high temperatures, even above the melting point of the metal alloys from which they are...Full Text Available

UK PubMed Central (United Kingdom)

Antisense radiopharmaceuticals could be used to image gene expression in the brain in vivo, should these polar molecules be made transportable through the blood–brain barrier....Full Text Available

UK PubMed Central (United Kingdom)

There are a range of barriers precluding patients from fully engaging in and benefiting from the spectrum of eHealth interventions developed to support patient access to health information, disease...Full Text Available

International Nuclear Information System (INIS)

Single photon tomography using lipophilic tracers provides tomographic representations of regional blood flow. To penetrate a healthy blood-brain barrier requires that radiotracers either are fat-soluble or have an affinity for one of the selective blood-brain barrier transport systems. In recent years there has been an increasing interest to explore the ideal physical characteristics of "9"9"mTc for diagnostic problems of brain diseases. The development of radiopharmaceuticals for brain imaging including the intensively studied "9"9"mTc-propyleneamineoxime derivatives is discussed. (author).

International Nuclear Information System (INIS)

The fusion excitation function for the radioactive projectile "8 Li on a "2"0"8 Pb target has been measured at energies near the Coulomb barrier. The results show that in the considered energy interval, the evaporation of four neutrons is the most relevant mechanism. However, at the highest energies used in the experiment, the Sn channel begins to appear. The preliminary experimental cross sections show a good agreement with the predictions of a simple evaporation calculation using the code PACE. (Author) 16 refs., 1 tab., 4 figs.

Energy Technology Data Exchange (ETDEWEB)

After an international ideas competition by TNC Switzerland and Germany in 1996, six companies where given the opportunity to construct a prototype of their newly developed integrated PV-sound barrier concepts. The main goal was to develop highly integrated concepts, allowing the reduction of PV sound barrier systems costs, as well as the demonstration of specific concepts for different noise situations. This project is strongly correlated with a German project. Three of the concepts of the competition are demonstrated along a highway near Munich, constructed in 1997. The three Swiss installations had to be constructed at different locations, reflecting three typical situations for sound barriers. The first Swiss installation was the world first Bi-facial PV-sound barrier. It was built on a highway bridge at Wallisellen-Aubrugg in 1997. The operational experience of the installation is positive. But due ...

Energy Technology Data Exchange (ETDEWEB)

Three reactive materials were evaluated at laboratory scale to identify the optimum treatment reagent for use in a Permeable Reactive Barrier Treatment System at Rocky Flats Environmental Technology Site (RFETS). The contaminants of concern (COCS) are uranium, TCE, PCE, carbon tetrachloride, americium, and vinyl chloride. The three reactive media evaluated included high carbon steel iron filings, an iron-silica alloy in the form of a foam aggregate, and a peculiar humic acid based sorbent (Humasorb from Arctech) mixed with sand. Each material was tested in the laboratory at column scale using simulated site water. All three materials showed promise for the 903 Mound Site however, the iron filings were determined to be the least expensive media. In order to validate the laboratory results, the iron filings were further tested at a pilot scale (field columns) using actual site water. Pilot test results were similar to laboratory results; consequently, the iron ...

International Nuclear Information System (INIS)

Mott-Schottky (M-S) analysis is an effective approach to investigate the electronic property of passive films of metals, and it is well suitable for the passive film with single space charge capacitance. But there is no proper method to analyze the Csc-2 vs. Vm plots of passive films with several space charge capacitances in series connection, such as bipolar passive films. In this paper, the relationship between the space charge capacitance of the bipolar passive film and the applied potential was deduced and the features of corresponding plots were given out simultaneously. Accordingly, a non-linear fitting method was presented to analyze the Csc-2 vs. Vm plots of bipolar passive films. Then the method was used to study the semiconductor characteristics of bipolar passive films formed on the surface of Nickel base alloy after being corroded in the environments with high temperatures and high partial pressures of H2S/CO2. The fitting results indicate that the ...

International Nuclear Information System (INIS)

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the other ...

Energy Technology Data Exchange (ETDEWEB)

Electronic properties of passive films formed on Fe at various applied potentials in pH 8.5 buffer solution were examined through the photocurrent measurement and impedance spectroscopy. Passive film formed on Fe at relatively low potentials was found to be r-FeOOH layer and internal r-Fe{sub 2}O{sub 3} layer. However, the r-FeOOH layer became unstable and disappeared at potentials below 400mV and hence may be an adsorbed layer. An electronic band structure model for the passive film of Fe was suggested on the basis of the spinel band model with involving two types of electronic excitation processes, i. e., the p-d and the d-d transition together. The effects of applied potential on the photocurrent behaviors of the passive film on Fe were explained appropriately by separating the photocurrent spectra depending on the transition type. The Mott-Schottky behavior for the passive film on Fe and the photocurrent variation with applied potential were also analyzed in ...

International Nuclear Information System (INIS)

Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.

International Nuclear Information System (INIS)

The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N _D) for the passive film is of the order of 10"2"1 cm"-"3 and decreases with increasing formation time and potential, indicating that defects decrease with increasing film thickness. Based on the information about the physical phenomena, an equivalent ...

International Nuclear Information System (INIS)

The electrochemical behaviour of passive films formed on one austenitic stainless steel (AISI 304) and one ferritic stainless steel (AISI 446) in solutions with pH between 0.6 and 8.4 was studied by capacitance measurements and photocurrent spectroscopy. Compositional characterization of the passive films was done by X-ray photoelectron spectroscopy. The capacitance increases with decreasing pH. Doping densities evaluated from Mott-Schottky plots are in the range 2-6 x 10"2"0 cm"-"3 and increased with the pH in the neutral/alkaline range while in pH 0.6, values above 10"2"1 cm"-"3 were found. The bandgap energy indicates two transitions, at 2.5-2.8 and 3.2 eV. The analytical data reveal that, as the pH increased, the films become enriched in Fe(II) and Fe(III), whereas the Cr(III) gradually decreases. The films formed at very low pH had a behaviour that contrasts with that of the films formed in the neutral/alkaline media. The films are described by a bilayer ...

Energy Technology Data Exchange (ETDEWEB)

We report measurements of the temperature dependence of the threshold current of GaAs, 1.3-..mu..m InGaAsP, and 1.5-..mu..m InGaAsP double heterostructure lasers using short electrical pulses. T/sub 0/approx.200 K is observed for all the lasers. These high T/sub 0/ values show that the carrier density at threshold does not increase rapidly with increasing temperature in any of the lasers studied and thus the observed low cw T/sub 0/ of InGaAsP lasers is primarily due to a decrease of the carrier lifetime at threshold with increasing temperature.

Energy Technology Data Exchange (ETDEWEB)

Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

International Nuclear Information System (INIS)

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

Energy Technology Data Exchange (ETDEWEB)

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

International Nuclear Information System (INIS)

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

Energy Technology Data Exchange (ETDEWEB)

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Proton and alpha particle spectral shapes and multiplicities have been measured in coincidence with evaporation residues from {sup 28}Si+{sup 165}Ho and {sup 16}O + {sup 197}Au, {sup 208}Pb fusion reactions. Our experiments used 145 to 220 MeV {sup 28}Si and 115 and 140 MeV {sup 16}O beams produced with the Stony Brook LINAC. ER`s were separated using an electrostatic deflector and detected with large area surface barrier detectors. Light charged particles were detected at forward and backward angles with fourteen single NaI detectors. In the context of the statistical model, charged particle spectra yield information about emission barriers and compound nucleus equilibrium level densities. These are significant ingredients in calculations determining fission timescales from other observables such as pre-scission neutron multiplicities or fusion-evaporation excitation functions. Results will also be compared to analyses of pre-scission charged ...

Energy Technology Data Exchange (ETDEWEB)

This paper reports on the protection of opening that are exposed to the environment in nuclear facilities which presents an almost overwhelming engineering challenge. Intakes and outflows must permit the passage of large volumes of air or water without impeding their flow, and they are often exposed to corrosive salt and chemicals. An intrusion detection sensor that is intended to protect these openings must be capable of operating reliably under environmentally harsh conditions, and at the same time either provide a physical delay barrier or attach to an existing barrier. A new fiber optic sensor technology has now been developed specifically for protecting environmentally exposed openings. This sensor uses a fiber optic cable embedded in a neoprene rubber frame which is reinforced with Kevlar threads or braided steel cable. The sensor is configured in a mesh pattern with openings sufficiently large to permit air or water to flow unimpeded, ...

International Nuclear Information System (INIS)

Analyses of the roles of cement-based barriers in radioactive waste isolation show that models used to estimate their characteristics during the lifetime of the repository must consider the alteration of material properties with time due to degradation processes. Reinforced concrete barriers at repositories shall be designed in such manner that they fulfil besides isolative capabilities also the required functions of mechanical resistance and stability. Key elements of safety evaluation are mainly the correct selection of materials for mineral composites with cement binder (cements, aggregates, mineral additives and chemical admixtures) and their design, execution of construction works and production of precast concrete containers (continuous casting of concrete - no cold joints, limited number of construction joints, proper placing and consolidation, finishing and curing), strict control of used materials and inspection of works, as well as ...

Energy Technology Data Exchange (ETDEWEB)

Geological clay formations are investigated for use as final underground deposit for heat producing nuclear waste. Special kinds of clay (e.g. bentonite) can also be used for the construction of geotechnical barriers. For the long time safety prognosis of the nuclear waste repositories the development of geochemical transport models is indispensable. The transport of aqueous solutions in clay is a complex process. The three-layer-minerals bentonite and illite swell by the adsorption of water, if the volume is restricted a high swelling pressure develops. The excellent barrier effect of natural clay formations and geotechnical clay barriers is based on the high swelling pressure and the high adsorption capacity for radionuclides and other pollutants. The two-layer-mineral kaolinite has no swelling capacity. In contrast to sandy layers a special geochemical transport potential exists in clay besides the well known matrix ...

Energy Technology Data Exchange (ETDEWEB)

The design of high level radioactive waste (HLW) repositories in deep geological media in which bentonite clay is proposed as a sealing material leads to the need of further studying the behaviour of highly compacted expansive soils when subjected to mechanical, hydraulic and thermal changes. Laboratory tests may help to understand the processes that take place in the clay barrier under simple and controlled conditions and to develop the governing equations. The laboratory tests enable to isolate the different processes, making their interpretation easier, and provide with fundamental data concerning the parameters to be used in the models. The extremely low permeability of these materials, their avidity for water (high suction) and their high swelling capacity make necessary the modification of the conventional laboratory techniques and procedures to determine basic physical parameters. The main hydraulic properties of the barrier to be ...

Energy Technology Data Exchange (ETDEWEB)

The information gathered as operating manager when implementing the first photovoltaic rural electrification and technology transfer program carried out to date in the world in French Polynesia from 1978 to 1990 are detailed. The technical developments of equipment and the work in progress at the GENEC Cadarache within French, European or IEA programs in order to improve some components or appliances and make up for certain deficiencies are presented. This involves accelerated aging tests, Standardization work, development of high efficiency equipment. Non technical barriers are often emphasized. Technical barriers also exists. Considerable work in many domains of small PV systems remains to be done so as to combine all the conditions required to implement successful large programs in developed as well as in developing countries.

Energy Technology Data Exchange (ETDEWEB)

The release of {sup 222}Radon to the atmosphere is controlled by the rate of its gas transport through earthen materials. Of the many soil-related parameters, radon diffusion coefficient is the key parameter that characterizes this transport. We compared the radon diffusion coefficients measured at the laboratories for the UMTRA Project with simple empirical correlations developed by others. The empirical correlations predict the radon diffusion coefficient based on the fraction of moisture saturation and porosity. One of the more recent correlations agrees reasonably well with the measurements. In addition, by using a series of correlation curves, we studied the empirical relationships of the. radon diffusion coefficient with the saturated hydraulic conductivity, the fines content, and the moisture saturation in soil. The results reveal that a reliable determination of the long-term moisture and porosity is essential in the design of an adequate radon barrier with ...

British Library Electronic Table of Contents (United Kingdom)

Abstract Objectives- Cyclodextrins are useful solubilizing excipients that have gained currency in the formulator's armamentarium based on their ability to temporarily camouflage undesirable physicochemical properties. In this context cyclodextrins can increase oral bioavailability, stabilize compounds to chemical and enzymatic degradation and can affect permeability through biological membranes under certain circumstances. This latter property is examined herein as a function of the published literature as well as work completed in our laboratories. Key findings- Cyclodextrins can increase the uptake of drugs through biological barriers if the limiting barrier component is the unstirred water layer (UWL) that exists between the membrane and bulk water. This means that cyclodextrins are mo...

CERN Document Server

Over three years ago, the Core Integration team of the National Science Digital Library (NSDL) implemented a digital library based on metadata aggregation using Dublin Core and OAI-PMH. The initial expectation was that such low-barrier technologies would be relatively easy to automate and administer. While this architectural choice permitted rapid deployment of a production NSDL, our three years of experience have contradicted our original expectations of easy automation and low people cost. We have learned that alleged "low-barrier" standards are often harder to deploy than expected. In this paper we report on this experience and comment on the general cost, the functionality, and the ultimate effectiveness of this architecture.

International Nuclear Information System (INIS)

It is known that the plant cuticle represents the first barrier that must be overcome by any chemical reaching the plant surface from the atmosphere before entering the plant. Because of the importance of the cuticle as a barrier to penetration of a wide variety of compounds, its morphology, chemistry, and permeability have been extensively studied. However, only limited information is available on the nature of functional chemical groups present and their interaction and role during the penetration process. The usefulness of in situ Fourier transform infrared spectroscopy studies in identifying functional groups present in isolated cuticles is described and their relationships to the structure of the cuticular membrane are discussed. Applications of infrared spectroscopy on the presence and role of phenolics in the cuticle structure and during the cuticle development, nitrogen oxide binding to isolated cuticles, and the interactions between ...

British Library Electronic Table of Contents (United Kingdom)

Abstract Background Atopic dermatitis (AD) affects health and quality of life and it has great impact on both health-care costs and costs to the society. Objectives The objective of this study was to develop a model to analyse the cost-effectiveness of a barrier-strengthening moisturizing cream as maintenance therapy compared with no treatment after initial treatment with betamethasone valerate in adult patients with AD in Sweden. A further aim was to apply a similar health-economic analysis for Denmark, Norway and Finland. Methods A Markov simulation model was developed including data from three sources: (i) efficacy data from a randomized controlled trial including patients with moderate AD treated with either a moisturizing cream or no treatment, (ii) resource utilization and quality of...

British Library Electronic Table of Contents (United Kingdom)

We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1-xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift.

Science.gov (United States)

An interest in electronic materials has led me to investigate new synthetic approaches to III-V' type semiconducting (13-15, current IUPAC designation for B and N groups in the Periodic Table) and magnetic (3-15) compounds. It is now possible to prepare binary (GaAs and GdP) and ternary mixed-metal (Al[sub x]Ga[sub 1-x]As) and mixed-pnictide (GaP[sub x]As[sub 1-x]) compounds in seconds from rapid, low-temperature-initiated metathesis reactions between a metal (III) trihalide and a trisodium pnictide, exemplified by MX[sub 3] + Na[sub 3]Pn [yields] MPn + 3 NaX, where M is Al, Ga, In, (Al,Ga), or a lanthanide; X is F, Cl, or I; and Pn is P, As, Sb, or (P,As). The precursors are mixed together in a dry box and ignited by light grinding with a mortar and pestle, or by brief, local heating from a hot filament. These reactions are very exothermic (calculated [Delta]H[sub rxn] (GaAs) = 138 kcal/mol) and typically reach temperatures in excess ...

International Nuclear Information System (INIS)

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier ...

Energy Technology Data Exchange (ETDEWEB)

GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias ...

International Nuclear Information System (INIS)

This report documents a case history in which a cadaver and the associated burial objects were found well preserved after being buried for more than 2100 years in Southern China. The preservation is attributed to a layer of kaolin that surrounded the coffin and served as a barrier to water and air movement. The implications for the disposal of nuclear fuel waste are discussed.

Science.gov (United States)

The efficiency of two thin-film diffusion barriers to be used in silicide/aluminum metallization schemes for silicon integrated circuits were evaluated. Control samples of Si/CoSi{sub 2}/Al and Si/Pd{sub 2}Si/Al, and test samples of Si/CoSi{sub 2}/Ta{sub 2}N/Al, Si/CoSi{sub 2}/W/Al and Si/Pd{sub 2}Si/Ta{sub 2}N/Al were used for sheet resistance, X-ray diffraction, Rutherford backscattering, and Auger-electron spectroscopic measurements. TEM studies were carried out on representative samples to examine the nature of the interfaces. Results from the analytical tests indicated that all three types of test samples are resistant to gross diffusion and intermixing of Co, Pd, Al and Si. They also showed that in the control samples, annealing causes interdiffusion of these species, necessitating the presence of a diffusion barrier. For test contacts, results demonstrated that although diffusion barriers may be successful in ...

International Nuclear Information System (INIS)

The propagation of tachyons in an expanding universe is discussed. It is shown that a primordial tachyon in the big bang universe cannot survive unless it had very large energy initially. In an indefinitely expanding universe the tachyon trajectory turns back in time. This time barrier is found to exist even in the quantum mechanical discussion of tachyons. This property is used to set limits on the mass of a tachyon. The possible astronomical checks on the hypothesis that neutrinos or photons may be tachyonic are also discussed.

International Nuclear Information System (INIS)

The thermal stability of diffusion barriers is explored on the basis of Bi films at different expedients of deriving of films. The examinations were conducted on the electrostatic accelerator at KNU of name Karazin V.N. under conditions of an isothermal bakeout directly under a proton beam of 1,85 MeV energy.

Energy Technology Data Exchange (ETDEWEB)

The aim of this report is to show how Energetic Planning and Territorial Policy should be working together for a better integration of Renewable Energies into Region. This Integration should to contemplate social, economic and environmental aspects of the territory. The report has been classified into 7 items: planning, energetic scenarios, technology transfer for Renewable Energies dissemination, barriers for this dissemination, environmental aspects, European Union Policy and Decision Support Systems (and specially GIS). (Author) 54 refs.

International Nuclear Information System (INIS)

We report the oxygen, hydrogen, and deuterium effects on nitrogen implantation of stainless steel. Oxygen is absorbed on the surface creating a potential barrier and diminishing the nitrogen retention. Deuterium removes more oxygen from the surface than hydrogen, augmenting the nitrogen chemical potential and yielding faster nitrogen diffusion into the bulk material.

International Nuclear Information System (INIS)

Muon captures by nucleon pairs via meson-exchange currents produce a high energy excitation tail in heavy nuclei. The muon induced fission by these excitations is calculated in several subactinide nuclei with high threshold fission barriers. The probability for delayed fission ranges from 4 x 10"-"5 to 4 x 10"-"3 for the isotopes considered. (orig.).

International Nuclear Information System (INIS)

HIPDM is an "1"2"3I-labeled agent with a distribution in brain reflecting regional perfusion. This compound is neutral and lipid soluble at blood pH and freely crosses the blood-brain barrier. At the lower pH in brain, it picks up a hydrogen ion and becomes positively charged. In this form the molecule is not lipid soluble and it is trapped in brain.

CERN Document Server

Two-dimensional generalization of the original peak finding algorithm suggested earlier is given. The ideology of the algorithm emerged from the well known quantum mechanical tunneling property which enables small bodies to penetrate through narrow potential barriers. We further merge this ``quantum'' ideology with the philosophy of Particle Swarm Optimization to get the global optimization algorithm which can be called Quantum Swarm Optimization. The functionality of the newborn algorithm is tested on some benchmark optimization problems.

Energy Technology Data Exchange (ETDEWEB)

In this paper coating developments for advanced gas turbine engines (diffusion aluminide coatings, overlay coatings, and ceramic thermal barrier coatings) were desorbed, a selection of current metallic coatings was made and their performance as outlined. Finally coating developments for advanced diesel engines with a view to improved turbocharging or to low heat rejection engines (adiabatic diesel concept) were dealt with. (IHOE).

Energy Technology Data Exchange (ETDEWEB)

The engineering and economic feasibility of using the geothermal resources in East Mesa, California, in a new corn processing plant is evaluated. Institutional barriers were also identified and evaluated. Several alternative plant designs which used geothermal energy were developed. A capital cost estimate and rate of return type of economic analysis were performed to evaluate each alternative. (MHR)

International Nuclear Information System (INIS)

... dwba excitation functions nitrogen 15 oxygen 16 beams oxygen 16 reactions

Energy Technology Data Exchange (ETDEWEB)

A simple and continuous model for the on-state current of polysilicon thin-film transistors, suitable for implementation in circuit simulators, is presented. The model includes the potential barrier at the grain boundaries, the channel length modulation and the excess current due to impact ionization. Comparison between measured output characteristics and the model shows excellent agreement over wide range of bias voltages and for devices with different gate lengths.

Energy Technology Data Exchange (ETDEWEB)

The B-Factory which is constructed by National Laboratory for High Energy Physics is the device for elucidating the breakdown of symmetry of matter and antimatter by studying the behavior of B mesons which are generated in large quantity when the electrons and the positrons which are accelerated to light velocity level are collided. In order to maintain electron beam-positron beam bunch circling the ring at light velocity stably, the instability of the coupled bunch must be overcome. For this purpose, the ultrahigh speed beam position digital feedback control system was developed. This system is composed of the high speed input-output substrate using GaAs LSI, the feedback computation substrate using complementary metal oxide semiconductor and the memory mounted on it, and the real time operation device. The development of both substrates and their functions are explained. The real time data collection and the change of computation parameters for specific bunch in ...

International Nuclear Information System (INIS)

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first observation of strain-enhanced electron spin polarization for ...

International Nuclear Information System (INIS)

Thinning specimens to electron transparency for electron microscopy analysis can be done by conventional (2-4 kV) argon ion milling or focused ion beam (FIB) lift-out techniques. Both these methods tend to leave 'mottling' visible on thin specimen areas, and this is believed to be surface damage caused by ion implantation and amorphisation. A low energy (250-500 V) Argon ion polish has been shown to greatly improve specimen quality for crystalline silicon samples. Here we investigate the preparation of technologically important materials for nanoanalysis using conventional and lift-out methods followed by a low energy polish in a GentleMill"T"M low energy ion mill. We use a low energy, low angle (6-8 deg.) ion beam to remove the surface damage from previous processing steps. We assess this method for the preparation of technologically important materials, such as steel, silicon and GaAs. For these materials the ability to create specimens from specific sites, and ...

Energy Technology Data Exchange (ETDEWEB)

(Al{sub y}Ga{sub 1{minus}y}){sup 1{minus}x}In{sub x}P semiconductor alloys lattice-matched to GaAs are widely used in visible optoelectronic devices. One of the most recent developments in this area is the AlGaInP-based red vertical cavity surface emitting laser (VCSEL). These lasers, which employ AlGaInP active regions and AlGaAs distributed Bragg reflectors (DBRs), have demonstrated continuous-wave (CW) lasing over the 630--690 nm region of the spectrum. Applications for these lasers include plastic fiber data communications, laser printing and bar code scanning. In this paper, the authors present an overview of recent developments in the processing and performance of AlGaInP based VCSELs. This overview will include a review of the general heterostructure designs that have been employed, as well as the performance of lasers fabricated by both ion implantation and selective oxidation.

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power conversion efficiency of the solar cell.

Science.gov (United States)

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor linearity of the ...

Energy Technology Data Exchange (ETDEWEB)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

British Library Electronic Table of Contents (United Kingdom)

Abstract Visible blue cathodoluminescence (CL), photoluminescence (PL), x-ray excited optical luminescence (XEOL) and electroluminescence (EL) via Zf free excitonic emission have been obtained from CuBr thin films deposited on glass, Cr coated glass, GaAs and Si substrates. In addition to the Zf emission several peaks corresponding to Cu+ emissions via 3d94s - d10 transitions were observed on the AC EL spectrum at 2.10, 2.7, 3.03, 3.07 and 3.80 eV. X-ray diffraction (XRD) measurements confirmed that the vacuum evaporated CuBr thin films grow preferentially with a (111) orientation irrespective of the substrate. While the AC voltage source was found to have no detrimental effects on CuBr thin films, cathodic deposition of Cu metal via electrolytic decomposition was observed under steady sta...

International Nuclear Information System (INIS)

The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range of 1#centre dot#10"1"7 cm"-"3 - 10"1"8 cm"-"3. (author)

International Nuclear Information System (INIS)

We theoretically model a nuclear-state preparation scheme that increases the coherence time of a two-spin qubit in a double quantum dot. The two-electron system is tuned repeatedly across a singlet-triplet level-anticrossing with alternating slow and rapid sweeps of an external bias voltage. Using a Landau-Zener-Stueckelberg model, we find that in addition to a small nuclear polarization that weakly affects the electron spin coherence, the slow sweeps are only partially adiabatic and lead to a weak nuclear spin measurement and a nuclear-state narrowing which prolongs the electron spin coherence. This resolves some open problems brought up by a recent experiment. We also show that the electronic two-spin states singlet and triplet T_+ are promising candidates for the implementation of a qubit in GaAs double quantum dots (DQD). A coherent superposition of the two-spin states is obtained by finite time Landau-Zener-Stueckelberg interferometry and the single qubit ...

International Nuclear Information System (INIS)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

International Nuclear Information System (INIS)

Thermally stable materials with low dielectric constant (k<3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant thin films in place of silicon-based materials. Polyaniline thin films ...

Energy Technology Data Exchange (ETDEWEB)

Alloy 600 is used as a material for steam generator tubing in pressurized water reactors(PWR) due to its high corrosion resistance under PWR environment. In spite of its corrosion resistance, stress corrosion cracking(SCC) has occurred on the primary side as well as the secondary side of the tubing. Oxide on steel surfaces in aqueous solution above 100 .deg. C is composed of duplex film structure. Inner layer of the oxide is dense and less porous, which is formed by growth of oxide layer on metal surface. Outer layer of the oxide is loose adhesive, which is formed by dissolution precipitation mechanism. Growth processes occur at the metal/oxide and oxide/electrolyte interfaces and are controlled by transport of the layer forming species through the layer, i.e. by the inward diffusion of oxygen including electrolyte species and the outward diffusion of metal cations. Understanding of basic electrochemical behaviors about anodic dissolution and passivation of bare surface of metals and ...

Energy Technology Data Exchange (ETDEWEB)

The research supported by this Department of Energy contract has primarily been devoted to the study of the electronic properties of surfaces with sub-micron size. In previous years, we have studied the photoexcitation of electrons from field emission tips by a focussed Argon-ion laser beam tuned to operate at specific photon energy. The photoexcited electrons escape into the vacuum by tunneling through a surface potential barrier which is distorted by the application of a strong electric field. The interest in these experiments lies in a better understanding of the photoexcitation process at low photon energies. The techniques that have been developed directly measure the excited state energy distribution of electrons emitted through the surface potential barrier. The basic information gained from this research is relevant to opto-electronic devices which rely on photoexcitation of electrons in the presence of strong interfacial electric ...

Energy Technology Data Exchange (ETDEWEB)

Today, as a result of increase in oil prices, limited fossil fuel resources, environmental consideration and global warming, the methyl ester fuels have been focused on alternative fuels. Methyl ester fuels can be used more efficiently in low heat rejection engines (LHR), in which the temperature of combustion chamber is increased by creating a thermal barrier. In this study, the piston, cylinder head, exhaust and inlet valves of a diesel engine were coated with the ceramic material Al{sub 2}O{sub 3}-TiO{sub 2} by the plasma spray method. Thus, a thermal barrier was provided for the parts of the combustion chamber with these coatings. The effects of corn oil methyl ester that produced by the transesterification method, and No. D2 fuels' performance and exhaust emissions' rate were studied by using equal in every respect coated and uncoated engines. Tests were performed on the uncoated engine, and then repeated on the coated ...

International Nuclear Information System (INIS)

The sensitivity analysis summarized in this paper was made to determine the parameters of greatest influence in the prediction of radon barrier cover thickness for the stabilization of uranium mill tailings piles. Such information provides the basis for setting priorities and levels of effort for data collection, and improves knowledge of the sources of uncertainty in the calculation of cover thickness. In the context of this paper, the influence of a parameter on cover thickness incorporates two effects: (1) the sensitivity of the mathematical formulation to changes in a parameter's value, and (2) the range of values that a parameter may take on under site-specific conditions. Of the several parameters that are used in the calculations, the most influential are cover moisture content, cover radon diffusion coefficient, tailings radium concentration and tailings radon emanating fraction, in order of decreasing relative influence. Less influential parameters for ...

International Nuclear Information System (INIS)

As shown in various new examples, HABOG facility (Netherlands), CERNAVODA (Candu - Romania), KOZLODUY (WWER - Bulgaria), CHERNOBYL ( RMBK - Ukraine), MAYAK (Spent Fuel from submarine and Icebreakers - Russia), recent studies allow to confirm the flexibility and performances of the CASCAD system proposed by SGN, both in safety and operability, for the dry storage of main kinds of spent fuel. The main features are: A multiple containment barrier system: as required by international regulation, 2 independent barriers are provided (tight canister and storage pit); Passive cooling, while the Fuel Assemblies are stored in an inert atmosphere and under conditions of temperature preventing from degradation of rod cladding; Sub-criticality controlled by adequate arrangements in any conditions; Safe facility meeting ICPR 60 Requirements as well as all applicable regulations (including severe weather conditions and earthquake); Safe handling operations; ...

International Nuclear Information System (INIS)

The barrier glow discharge between two planar electrodes, covered with dielectric, is studied under high-voltage pulsed power supply. Wide applications of such type of discharges, in particular, for ozone production, stimulated a number of investigations in this direction. In this work we investigated the dependence of ozone concentration on the duration and the rate of pulse rise of the applied voltage. The thyristor converter circuit with the shortening of input pulses on the base of the saturable throttle was used for the realization of this task. The output pulses with amplitude up to 15 kV, repetition frequency of 1 kHz, pulse duration of 0.3 #mu#s (or 7 #mu#s) and the rate of pulse rise of 0.1 #mu#s were generated with this scheme. Measurements of the ozone concentration produced in the air mixture have shown that its value increased by factor two with variation of the rate of pulse rise from 0.5 #mu#s to 0.1 #mu#s (for pulse duration of 7 #mu#s). The ...

Energy Technology Data Exchange (ETDEWEB)

In an effort to develop cost-efficient techniques for remediating uranium contaminated groundwater at DOE Uranium Mill Tailing Remedial Action (UMTRA) sites nationwide, Sandia National Laboratories (SNL) deployed a pilot scale research project at an UMTRA site in Durango, CO. Implementation included design, construction, and subsequent monitoring of an in situ passive reactive barrier to remove Uranium from the tailings pile effluent. A reactive subsurface barrier is produced by emplacing a reactant material (in this experiment various forms of metallic iron) in the flow path of the contaminated groundwater. Conceptually the iron media reduces and/or adsorbs uranium in situ to acceptable regulatory levels. In addition, other metals such as Se, Mo, and As have been removed by the reductive/adsorptive process. The primary objective of the experiment was to eliminate the need for surface treatment of tailing pile effluent. Experimental design, and ...

Energy Technology Data Exchange (ETDEWEB)

There are certain factors to take into account when determining the suitability of a healthy house site. Power lines, agricultural spraying, vehicle exhaust, and industrial pollution are all potential sources of indoor air contamination. It is recommended that a environmental assessment be done to determine whether there are specific sources of contamination. Good drainage is required. The surrounding landscaping should be open and sunlit, and with low maintenance requirements. Decks and fences made from pressure-treated or chemical treated lumber should be avoided. One of the early decisions in the design process is the choice of the structural system. The key with all foundation types is to control moisture, whether from rain, from the ground, or the condensation of moisture from the air with cooling. The construction frame is sealed away from the occupants by the air/vapor barrier, so only in extreme cases is it essential to use alternatives to softwood lumber ...

Energy Technology Data Exchange (ETDEWEB)

The Hanford Site, Richland, Washington, contains over 1,500 identified waste sites and numerous groundwater plumes that will be characterized and remediated over the next 30 years. As a result of the Hanford Federal Facility Agreement and Consent Order, the US Department of Energy (DOE) has initiated a remedial investigation/feasibility study (RI/FS) at the 200-BP-1 operable unit. The 200-BP-1 RI/FS is the first Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA) investigation on the Hanford Site that involves highly radioactive and chemically contaminated soils. The initial phase of site characterization was designed to assess the nature and extent of contamination associated with the source waste sites within the 200-BP-1 operable unit. Characterization activities consisted of drilling and sampling, chemical and physical analysis of samples, and development of a conceptual vadose zone model. These data were then used. to develop remedial alternatives during ...

Science.gov (United States)

Group B Streptococcus (GBS) is the leading cause of meningitis in newborn infants. Bacterial cell surface appendages, known as pili, have been recently described in streptococcal pathogens, including GBS. The pilus tip adhesin, PilA, contributes to GBS adherence to blood-brain barrier (BBB) endothelium; however, the host receptor and the contribution of PilA in central nervous system (CNS) disease pathogenesis are unknown. Here we show that PilA binds collagen, which promotes GBS interaction with the ?(2)?(1) integrin resulting in activation of host chemokine expression and neutrophil recruitment during infection. Mice infected with the PilA-deficient mutant exhibit delayed mortality, a decrease in neutrophil infiltration and bacterial CNS dissemination. We find that PilA-mediated virulence is dependent on neutrophil influx as neutrophil depletion results in a decrease in BBB permeability and GBS-BBB penetration. Our results suggest that the bacterial pilus, ...

Energy Technology Data Exchange (ETDEWEB)

The research supported by this Department of Energy contract has primarily been devoted to the study of the electronic properties of surfaces with sub-micron size. In previous years, we have studied the photoexcitation of electrons from field emission tips by a focussed Argon-ion laser beam tuned to operate at specific photon energy. The photoexcited electrons escape into the vacuum by tunneling through a surface potential barrier which is distorted by the application of a strong electric field. The interest in these experiments lies in a better understanding of the photoexcitation process at low photon energies. The techniques that have been developed directly measure the excited state energy distribution of electrons emitted through the surface potential barrier. The basic information gained from this research is relevant to opto-electronic devices which rely on photoexcitation of electrons in the presence of strong interfacial electric ...

Energy Technology Data Exchange (ETDEWEB)

The general usefulness of neutron activation analysis (NAA) for samples containing the platinum group elements and Au, either as major or trace constituents, is discussed. Charged particle activation is shown to be a viable or complementary alternative. Proton (6-10 MeV) and alpha particle (9-15 MeV) beams, produced in a Tandem van de Graaff accelerator, have been established to be the most effective choice. By taking advantage of the Coulomb barrier effect and the fact that many charged particle induced reactions have relatively large threshold values, the same instrumental technique can be applied, with minor modifications, to a wide range of materials.

Energy Technology Data Exchange (ETDEWEB)

The depositional environments of the Mesaverde Group of the Piceance Creek basin in northwestern Colorado have determined the basic morphology and characteristics of the tight gas sands reservoirs in the three Multi-Well Experiment wells. The three morphologies, in ascending stratigraphic order, are a blanket type of reservoir (marine to shoreline environment), a lenticular type of reservoir (the paludal and coastal zones of the lower and upper delta plain), and an irregular tabular/elongate reservoir produced by meandering fluvial systems. Internal reservoir discontinuities vary among these types of reservoirs, but consist primarily of permeability barriers and conduits caused by shale breaks and fractures. 10 references, 5 figures.

International Nuclear Information System (INIS)

The response of a real time neutron dosemeter using a thin LiF target sandwiched between tow parallel surface barrier semiconductor detectors is studied for different neutron distributions and different angles of incidence. Calculations of the response function defined for a simultaneous detection by the two detectors of the particles emitted when the reaction "6Li(n,t)#alpha# occurs in the target are fulfilled by geometrical considerations of the reaction kinematics and the differential cross section variations. Finally, the efficiency of the studied detection systems is analyzed for dosimetric uses. (author).

Energy Technology Data Exchange (ETDEWEB)

We investigate, from a spacetime perspective, some aspects of Horowitz's recent conjecture that black strings may catalyze the decay of Kaluza-Klein spacetimes into a bubble of nothing. We identify classical configurations that interpolate between flat space and the bubble, and discuss the energetics of the transition. We investigate the effects of winding tachyons on the size and shape of the barrier and find no evidence at large compactification radius that tachyons enhance the tunneling rate. For the interesting radii, of order the string scale, the question is difficult to answer due to the failure of the {alpha}' expansion.

Wastenet

...May 2011, 693-709 On the valuation of fader and discrete barrier options in Heston's stochastic volatility model by Susanne Griebsch & Uwe Wystup [Downloadable!... (restricted)] 863-881 Nonlinearities in stochastic clocks: trades and volume as subordinators of electronic markets by Rafael Velasco-Fuentes & Wing Lon Ng [...and estimation of stock prices and trading volume in Barndorff-Nielsen and Shephard stochastic volatility models by Friedrich Hubalek & Petra Posedel [Downloadable!... (restricted)] 665-691 Generic pricing of FX, inflation and stock options under stochastic interest rates and stochastic volatility by Alexander van Haastrecht & Antoon ...

Energy Technology Data Exchange (ETDEWEB)

Geothermal heat pump systems are a promising new energy technology that has shown rapid increase in usage over the past 10 years in the United States. These systems offer substantial benefits to consumers and utilities in energy (kWh) and demand (kW) savings. The purpose of this study was to determine what existing monitored data were available mainly from electric utilities on heat pump performance, energy savings, and demand reduction for residential, school, and commercial building applications. Information was developed on the status of electric utility marketing programs, barriers to market entry, incentive programs, and benefits.

International Nuclear Information System (INIS)

The design and first results from a Double Sided Silicon Strip Detector (DSSSD) recently installed at the Lund Nuclear Microprobe facility (NMP) are presented. The detector has 64 sector strips and 32 ring strips, which in combination give more than 2000 detector cells, each with characteristics comparable with a standard surface barrier detector (SBD). The detector has been tested both with radioactive sources and with different ion beams and energies. The most striking features are the high rate virtually pile-up free operation and also the possibility of detailed measurement of angular distributions.

Energy Technology Data Exchange (ETDEWEB)

The addition of carbon to samples, during imaging, presents a barrier to accurate TEM analysis, the controlled deposition of hydrocarbons by a focused electron beam can be a useful technique for local nanometer-scale sculpting of material. Here we use hydrocarbon deposition to form nanopores from larger focused ion beam (FIB) holes in silicon nitride membranes. Using this method, we close 100-200nm diameter holes to diameters of 10nm and below, with deposition rates of 0.6nm per minute. I-V characteristics of electrolytic flow through these nanopores agree quantitatively with a one dimensional model at all examined salt concentrations.