Science.gov (United States)

A doubly Q-switched laser with both an acousto-optic (AO) modulator and a GaAs saturable absorber can obtain a more symmetric and shorter pulse with high pulse peak power, which has been experimentally proved. The key parameters of an optimally coupled doubly Q-switched laser with both an AO modulator and a GaAs saturable absorber are determined, and a group of general curves are generated for what we believe is the first time, when the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined, and the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density as well as the influence of the AO Q-switch are considered. These key parameters include the optimal normalized coupling parameter, the optimal normalized GaAs saturable absorber parameters, and the normalized parameters of the AO Q-switch, ...

Science.gov (United States)

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD ...

Energy Technology Data Exchange (ETDEWEB)

This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in ...

Energy Technology Data Exchange (ETDEWEB)

In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark ...

International Nuclear Information System (INIS)

A new polarized electron gun for use on the SLC at SLAC has been built and tested. It is a diode gun with a laser driven GaAs photocathode. It is designed to provide short (2ns) pulses of 10 A at 160 kV at 120 Hz. The design features of the gun and results from a testing program on a new and dedicated beam line are presented. Early results from operation on the SLC will also be shown.

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe ...

Science.gov (United States)

Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.

Energy Technology Data Exchange (ETDEWEB)

The platinum-silicide layer was investigated as the anode contact of a high-power P-i-N diode. The thermal stability at 700 deg. C was found sufficient for the purpose of Pt in-diffusion from the platinum-silicide layer into the volume. The diffusion, which was controlled using the radiation defects resulting from the 10 MeV alpha particle irradiation, represents a new local lifetime control in the float zone silicon with very low-leakage current, while keeping the benefits of traditional approaches.

Science.gov (United States)

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser ...

Energy Technology Data Exchange (ETDEWEB)

The following work deals with the realization, characterization and modeling of GaInP / AlGaInP high power semiconductor laser diodes in the visible wavelength range. In addition to the exploration and optimization of efficiency, temperature stability and maximum output power of multi-mode lasers especially methods for longitudinal and lateral mode stabilization of high power laser diodes have been investigated. Although often the focus of optimization is on the threshold current density, in this work the performance of the laser diode for an operation point around 1 Watt under continous wave operation is regarded as the figure of merit. It turns out that low carrier densities are key for an efficient reduction of the heterobarrier leakage currents. In addition, large optical cavity structures with low internal losses enable high external quantum efficiencies ...

Science.gov (United States)

We report on the formation of current blocking regions by O2 plasma treatment to reduce current crowding at the active region above the p-type electrodes of GaN-based vertical light emitting diodes (LEDs). The forward voltage and reverse current (at -5 V) of the plasma-treated LEDs slightly increase with increasing aging time. The output power (at 350 mA) of the plasma-treated LEDs is enhanced by 26% as compared to that of reference LEDs and is comparable to that of LEDs with SiO2 current blocking layers. It is shown that the output power (at 700 mA) of the plasma-treated LEDs is degraded by less than 2% of the initial value after 500 h.

Energy Technology Data Exchange (ETDEWEB)

Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In/sub 1-//sub y/(Al/sub x/Ga/sub 1-//sub x/)/sub y/P-In/sub 1-//sub y/ (Al/sub x/Ga/sub 1-//sub x/)/sub y/P quantum well heterostructures grown lattice matched (yapprox. =0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (J/sub th/approx.10/sup 4/ A/cm/sup 2/, 625 nm) of diodes fabricated from the same crystal is described.

Energy Technology Data Exchange (ETDEWEB)

ITN Energy Systems is developing next-generation solar cells based on the concepts of an optical rectenna. ITN's optical rectenna consists of two key elements: (1) an optical antenna to efficiently absorb the incident solar radiation, and (2) a high-frequency metal-insulator-metal (MIM) tunneling diode that rectifies the AC field across the antenna, providing DC power to an external load. The combination of a rectifying diode at the feedpoints of a receiving antenna is often referred to as a rectenna. Rectennas were originally proposed in the 1960s for power transmission by radio waves for remote powering of aircraft for surveillance or communications platforms. Conversion efficiencies greater than 85% have been demonstrated at radio frequencies (efficiency defined as DC power generated divided by RF power incident on the device). ...

Energy Technology Data Exchange (ETDEWEB)

Red laser diodes emitting at 636 nm and 645 nm are studied as a function of pressure up to 20 kbar and temperature from 300 K down to 80 K. The 636 nm samples reveal anomalous L-I-V dependence at low temperatures and at high pressures. The 645 nm samples do not show these anomalies and can be tuned by pressure and temperature down to 575 nm, i.e., in the 70 nm range with powers above 200 mW and low threshold currents. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Science.gov (United States)

For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of increasing the flow rate ...

International Nuclear Information System (INIS)

Radiation defects produced by helium implantation were used to shape profiles of palladium (Pd) and platinum (Pt) atoms in-diffusing (for 20 min at temperatures 600-800 deg. C) either from surface silicide (Pd_2Si, PtSi) or implanted layers. Results show that this procedure allows a strong localization of substitutional Pd and Pt at the depth where the damage produced by helium peaks. This results in local reduction of carrier lifetime by an almost ideal recombination centers - the acceptor level of substitutional Pd (E _c - 0.22 eV) or Pt (E _c - 0.23 eV). While optimum conditions for Pt in-diffusion are about 700 deg. C, Pd gives the best results already at lower temperatures (600 deg. C) where it also exhibits higher peak solubility. Both methods were used for optimization of turn-off properties of high power PiN diodes. The devices, where the lifetime was killed locally by Pd and Pt, exhibited similar trade-off between the static and ...

Science.gov (United States)

A univibrator and a pulse height discriminator using tunnel diodes and backward diodes are described, along with their applications in pulse shaping and fast coincidence technique. The main advantages achieved are simplicity of design and speed. The characteristics of the two diodes are shown. (auth)

Energy Technology Data Exchange (ETDEWEB)

We have generated approximately 100 watts of frequency doubled light from the output of an electro-optically Q-switched, diode-pumped Nd:YAG slab laser oscillator operating at an average power of 200 watts (2.5 kHz repetition rate, 80 mJ/pulse, 25 ns pulsewidth). The Q-switch was a compensated z-axis propagation LiNbO{sub 3} electro-optic modulator, and the frequency conversion crystal was a thin slab of KTP. In addition, Q-switched operation at an average power of approximately 250 watts with 26 ns pulsewidths has been demonstrated.

Energy Technology Data Exchange (ETDEWEB)

The temperature dependence of the spontaneous magnetization of epitaxial iron films with a thickness ranging from d=20 to 200nm has been measured. The films are grown on GaAs (100) substrates which are covered by a 150nm thick silver (100) buffer layer. For three-dimensional BCC iron it was observed already in 1929 that saturation of the spontaneous magnetization for T->0 is perfectly described by a T{sup 2} power law. On the other hand, for thin two-dimensional (2D) iron films a T{sup 3/2} law has been established in many recent experimental investigations. In our iron films grown on diamagnetic silver, this dimensionality change occurs at a thickness between d=100 and 200nm. Comparison of the here-observed T{sup 3/2} coefficients with those on iron films grown on paramagnetic tungsten (110) shows that the 2D interactions are {approx}20 times larger in the films on tungsten. Recent results on Fe films which are grown directly on ...

Energy Technology Data Exchange (ETDEWEB)

Relativistic electron beams are used for generating high power microwaves. These microwave sources require electron beam generators spanning significant ranges in voltage and impedance. The pulsed power technology used to generate these electron beams is presented. Electron beam generators that produce beams with pulse durations in the 10 ns to 100 ns regime consist of an energy storage section, pulse shaping section, and an electron beam diode. The energy storage section is either a Marx generator or capacitor bank-pulsed transformer. The pulse shaping is done with high-voltage transmission lines. The electron beam diode is usually a cold-cathode, space-charge-limited flow device. For longer pulses (approx.1 ..mu..s) the energy storage and pulse shaping can be combined. Lumped-element pulsed-forming networks (PFN) can be designed to produce the desired pulse shape. The Marx generator becomes one of the ...

Science.gov (United States)

Self-magnetically insulated, high-voltage transmission lines are used in inertial confinement fusion particle accelerators in order to transmit power from the vacuum insulator to the diode. This paper describes a time-dependent 2-D code (MITL) for calculating (for planar or triplate geometries) the motion of test electrons through the tapered input or output convolutes of such lines. MITL results show that the electron canonical momentum in the direction of the flow changes as the electron passes through the convoluted geometry; it is suggested that these electrons lead to losses observed in long self-magnetically insulated lines.

International Nuclear Information System (INIS)

Experiments are described on a plasma cathode with biased grids to prevent entry of ions into the electron extraction gap. The cathode has potential applications to the generation of high-current pulsed electron beams. Operation at 20 A/cm"2 is theoretically possible. The source combines the low average power consumption of a plasma cathode with many of the attractive features of thermionic cathodes, such as space-charge-limited extractor gap electron flow, fast turn-on, and no diode closure. Initial experiments are reported at the 2 A/cm"2 level for pulse lengths to 160 #mu#s.

Energy Technology Data Exchange (ETDEWEB)

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

Energy Technology Data Exchange (ETDEWEB)

Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Science.gov (United States)

light-emitting diode A light-emitting diode, or LED, is a semi-conductor light source that emits visible light or invisible infrared radiation. Semi-conductors ...

Energy Technology Data Exchange (ETDEWEB)

The latest electronic circuit technology that can be used for the electric railway traction system fed by an AC/DC dual power line was developed. This system consists of reverse conducting GTO thyristors, microprocessors, and DSP`s. In the AC power supply line section, the line converter is controlled by PWM technology to secure a high power factor and reduce the higher harmonic generation of an input current as far as possible. The line converter and motor converter use reverse conducting GTO thyristors. Since these converters are cooled using a heat pipe cooler, they are reduced in size and weight. The electric grounding point of the main power circuit is set to the negative side of the DC line for AC and DC line sections. Therefore, the AC/DC selector switch was simplified in structure. Moreover, the DC input for the auxiliary power supply can be obtained from multiple line ...

Science.gov (United States)

Repetitively Q-switched operation of an end-pumped Nd:YAG laser over the range of 200 Hz to 3 kHz using an intracavity chopper is demonstrated. Performance is shown to be comparable to that achieved with an acousto-optic Q switch under similar conditions. The advantages and limitations of the mechanical Q switch are described. Parametric variations of output coupling and pump power lead to an extended empirical description of repetitively Q-switched laser operation. The insertion loss as a function of aperture-edge penetration into the resonator is reported, and a definition of the mechanical Q-switch opening time is provided. Q-switched pulsewidths as short as 35 ns were obtained for the Nd:YAG laser, with a peak power-enhancement factor in excess of 300. PMID:20862099

Science.gov (United States)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub ...

International Nuclear Information System (INIS)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for visible-wavelength ...

KoreaScience (Korea)

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International Nuclear Information System (INIS)

This article describes the laser Thomson scattering principle and the developed system on HL-2A device. The high power Q-switch Nd:YAG laser, with a wavelength of 1064 nm, can sufficiently satisfy the measurement requirement. The polycromator consisting of avalanche photo-diodes(APD) and narrow band interference filters, can effectively improve the measurement of scattering light. The electron temperature is deduced by error-weighted lookup table method, which improves the data- processing speed or efficiency. Finally, the experiment results of the one-point electron temperature during different discharges of plasma are presented. (authors)

Energy Technology Data Exchange (ETDEWEB)

Buried ridge stripe lasers have been grown on InP in two steps by gas source molecular beam epitaxy. The active structure consists of a compressively strained layer multi quantum well with an equivalent wavelength emission at 1.5 [mu]m. The stripe was defined by reactive ion etching. A threshold current of 22 mA was reproducibly obtained on a laser length of 500 [mu]m. A CW output power of 48 mW per facet was achieved. In addition, preliminary accelerated aging tests have shown the high reliability the structure. (orig.)

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

High microwave power (1,000 W) electron cyclotron resonance CH{sub 4}/H{sub 2}/Ar discharges produce etch rates for In{sub 0.5}Ga{sub 0.5}P, Al{sub 0.5}In{sub 0.5}P{sub 0.5}, and Al{sub 0.5}Ga{sub 0.5}P of {approximately} 2,000 {angstrom}/min at moderate RF power levels (150 W) and low pressure (1.5 mTorr). This is approximately a factor of five faster than for conventional reactive ion etching conditions where much higher ion energies are necessary. The etched surfaces are smooth over a wide range of CH{sub 4}-to-H{sub 2} ratios and microwave powers. AlInP is more resistant to preferential loss of P from the near-surface during etching than is InGaP. While the etching is ion-driven, pure Ar discharges produce rough surfaces and the CH{sub 4}/H{sub 2} is necessary in the achievement of acceptable morphologies. The InGaAlP/GaAs heterostructure is being increasingly utilized in diode lasers, light ...

Energy Technology Data Exchange (ETDEWEB)

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs solar cell on poly-Ge and to improve our ...

Energy Technology Data Exchange (ETDEWEB)

Production of intense negative ion beams in magnetically insulated diodes was studied in order to develop an understanding of this process by measuring the ion-beam parameters as a function of diode and cathode plasma conditions in different magnetically insulated diodes. A coral diode, a racetrack diode, and an annular diode were used. The UCI APEX pulse line, with a nominal output of 1MV, 140kA, was used under matched conditions with a pulse length of 50 nsec. Negative-ion intensity and divergence were measured with Faraday cups and CR-39 track detectors. Cathode plasma was produced by passive dielectric cathodes and later, by an independent plasma gun. Negative-ion currents had an intensity of a few A/cm{sup 2} with a divergence ranging between a few tenths milliradians for an active TiH{sub 2} plasma gun and 300 milliradians for a passive polyethelene ...

International Nuclear Information System (INIS)

In a positive polarity induction adder each of the induction cavities is a cathode, which emits electrons at a unique potential. These broad spectrum electrons strongly affect Magnetically Insulated Transmission Line (MITL) behavior. Electron flow decreases the cavity-to-MITL coupling efficiency, and reduces the power transport efficiency along the system. Also, the operating impedance of the MITL is lowered, reducing the diode impedance required for good coupling and good total system power efficiency. It is therefore imperative to understand the details of MITL electron flow. In previous work, measurement of MITL electron flow for a twenty-stage linear induction adder (Hermes III), operated in positive polarity, was compared with simulations. There was qualitative agreement, but some differences were noted. For example, measured electron flow in the first cavities was greater than in the simulations. The authors have ...

International Nuclear Information System (INIS)

In this paper, an improved soft switched two cell interleaved boost AC/DC converter with high power factor is proposed and investigated. A new auxiliary circuit is designed and added to two cell interleaved boost converter to reduce the switching losses. The proposed auxiliary circuit is implemented using only one auxiliary switch and a minimum number of passive components without an important increase in the cost and complexity of the converter. The main advantage of this auxiliary circuit is that it not only provides zero-voltage-transition (ZVT) for the main switches but also provides soft switching for the auxiliary switch and diodes. Though all semiconductor devices operate under soft switching, they do not have any additional voltage and current stresses. The proposed converter operates successfully in soft switching operation mode for a wide range of input voltage level and the load. In addition, it has advantages such as fewer structure ...

International Nuclear Information System (INIS)

Thinning specimens to electron transparency for electron microscopy analysis can be done by conventional (2-4 kV) argon ion milling or focused ion beam (FIB) lift-out techniques. Both these methods tend to leave 'mottling' visible on thin specimen areas, and this is believed to be surface damage caused by ion implantation and amorphisation. A low energy (250-500 V) Argon ion polish has been shown to greatly improve specimen quality for crystalline silicon samples. Here we investigate the preparation of technologically important materials for nanoanalysis using conventional and lift-out methods followed by a low energy polish in a GentleMill"T"M low energy ion mill. We use a low energy, low angle (6-8 deg.) ion beam to remove the surface damage from previous processing steps. We assess this method for the preparation of technologically important materials, such as steel, silicon and GaAs. For these materials the ability to create specimens from specific sites, and ...

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...

Energy Technology Data Exchange (ETDEWEB)

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

Energy Technology Data Exchange (ETDEWEB)

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

Energy Technology Data Exchange (ETDEWEB)

The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

International Nuclear Information System (INIS)

The authors have designed and constructed four types of electron-beam diodes for the new 4-MV RLA injector: a non-immersed foilless diode, a magnetically immersed foilless diode, a foil diode and an ion-focused foilless diode, They are tailored to fit the new injector cavity. The design goals were to produce high quality 10-kA to 20-kA electron beams with a #beta# perpendicular smaller than 0.2 and a beam radius of the order of 2 cm. These beams will be matched to the RLA IFR channel so #beta# perpendicular must be equal to or smaller than the square root of the ratio of the beam current versus Alfven current for f_e = 1. A reentrant anode geometry was selected for the injector cavity design, because it offers substantial savings on the required amount of feromagnetic cores. The inner radius of the outside shell, now only 30 cm, would have been twice as large (60 cm) if a coaxial ...

Energy Technology Data Exchange (ETDEWEB)

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE ...

Science.gov (United States)

The formation of palladium silicides near the interface may decrease hydrogen solubility at the effective metal/semiconductor ...

Science.gov (United States)

Metal-semiconductor solar cells reported to date exhibit inherently low output voltages. This effect isa consequence of high diode "saturation" ...

International Nuclear Information System (INIS)

... electron guns linear accelerators magnetrons multivibrators pulse generators

Energy Technology Data Exchange (ETDEWEB)

Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.

Energy Technology Data Exchange (ETDEWEB)

The strongly localized one-electron (D{sup 0}) and two-electron (D{sup -}) donor states are considered with the lattice deformation around the donor center taken into account. For GaAs, donor energy levels have been calculated as functions of the hydrostatic pressure. The calculated energy positions and pressure coefficients agree with the experimental data. It is shown that the interaction with phonons reduces the probability of radiative transitions between the states of different localization and leads to the metastability of shallow-level donor states with respect to the D{sup -} state in GaAs and both the states (D{sup 0} and D{sup -}) in CdF{sub 2}. (author) 7 refs, 1 fig

Science.gov (United States)

Near-ideal Schottky barrier contacts to n-type Al0.22Ga0.78N have been developed by a two-step surface treatment technique. Plasma etching of the AlxGa1-xN surface prior to Schottky metal deposition, combined with sequential chemical treatment of the etched surface, holds promise for developing high quality low-leakage Schottky contacts for low noise applications and for recessed gate high electron mobility transistors. In this work, the effect of postetch chemical treatment of the n-type Al0.22Ga0.78N surface on the performance of the Ni/Au based Schottky contact has been investigated. Three different types of chemical treatment: viz, reactive ion etching, reactive ion etching plus dipping in hot aqua regia, and reactive ion etching plus dipping in hot KOH, are studied. Detailed current-voltage studies of three different surface treated diodes and a comparison with as-deposited diodes reveal significant improvement in the ...

Energy Technology Data Exchange (ETDEWEB)

This paper deals with conversions of solar energy efficiently into electricity and into gas laser radiation. In the first section, a review study of the possibility of a solar-electric thermophotovoltaic (TPV) device has been done. In a proposed extension of the TPV concept, a Cassagranian optical system concentrates solar radiation to heat a blackbody cavity to 2400/sup 0/K. A double-layer solar cell, GaAs and Si, forming the cylindrical surface concentric to the blackbody cavity, receives the blackbody radiation and converts it into electricity efficiently. A cell conversion efficiency of 50% or more would be possible with the TPV system. The second section explores the concept of blackbody radiation pumping of gas laser media as a step toward utilization of solar energy as a laser pumping source. To demonstrate this concept, an experiment was performed in which various gas mixtures of CO/sub 2/ and He were exposed to 1500/sup 0/K thermal radiation for brief ...

Science.gov (United States)

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

UK PubMed Central (United Kingdom)

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

International Nuclear Information System (INIS)

Using the slow electrons spectrometer one can get information on the surface structure, its element composition, chemical bonds, adsorption phenomena, electron state density and surface oscillation. We have developed the methods and created the apparatus that makes it possible to investigate the electron backscattering by solid surface. We have studied the electron scattering by the polycrystalline and monocrystalline. GaAs surface in the energy range of 0 to 9 eV. The FWHM of electron energy distribution function was 70 meV. (author).

Science.gov (United States)

Continuous wave operation of an Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P /Ga/sub 0.52/In/sub 0.48/P /Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 ..mu..m and the threshold current was 55 mA for a diode with a nitride-insulated, 8-..mu..m-wide and 250-..mu..m-long stripe geometry.

Energy Technology Data Exchange (ETDEWEB)

In this report an isolated PWM DC-AC SICAM with an active capacitive voltage clamp is presented. AC-DC power supply is implemented in its simplest form: diode rectifier followed by a medium-size charge-storage capacitors and possibly with an EMC filter on the mains entrance. Isolation from the AC mains is achieved using a high frequency (HF) transformer, whose voltages are not audio-modulated. The latter simplifies the design and is expected to have many advantages over the approach where the transformer voltages are modulated in regards to the audio signal reference. Input stage is built as a DC-AC inverter (push-pull, half-bridge or a full-bridge) and operated with 50% duty cycle, with all the challenges to avoid transformer saturation and obtain symmetrical operation. On the secondary side the output section is implemented as rectifier+inverter AC-AC stage, i.e. a true bidirectional bridge, which operation is aimed towards amplification of ...

UK PubMed Central (United Kingdom)

The factors determining temperature and current coefficients of lasing wavelength are investigated and discussed under monitoring CO₂-gas absorption spectra. The diffusion rate of...Full Text Available

UK PubMed Central (United Kingdom)

This study was an evaluation of the performance of self-applied, blue light, light-emitting diode therapy in the treatment of mild-to-moderate inflammatory acne on the face, concerning: 1) time to improvement...Full Text Available

Science.gov (United States)

A detection theory is developed for point-contact metal-oxide-metal (MOM) systems. A system with heterogeneous oxide strongly bonded to the substrate is considered. It is shown that the form of the functional connection between the barrier heights and the ultimate compressive strength of the oxide has no substantial influence on the voltage-current characteristics of the system. Quantitative analysis indicates that a MOM system can behave as a tunnel diode and as a diode with a Schottky barrier. The model permits the determination of the optimum construction of long-life detectors based on MOM point-contacts.-

International Nuclear Information System (INIS)

Direct determination of "2"3"2U and its decay products in animal tissues appears to be feasible using an intrinsic Ge(Li) diode detector (for energies of 5-100 keV) and a NaI(Tl) anticoincidence-shielded Ge(Li) diode for higher-energy gamma photons. The detection sensitivity for "2"3"2U and "2"2"8Th is 0.03 and 0.01 nCi, respectively, using a 300-min counting time.

Energy Technology Data Exchange (ETDEWEB)

The five thermal-hydraulic concepts chosen for conceptual study of advanced PWR systems have been studied as follows: (1) Critical Heat Flux in passive PWR Conditions: review of previous works (various of correlations, analysis of parametric trends) on CHF, assessment and improvement of CHF prediction models for round tubes, development of the prediction model on bundle CHF with considering the correction factor calculated from the tube data base, design and construction of the intermediate-pressure CHF experimental loop, extension of CHF data base by performing the experiments at low-flow, and low-quality conditions (2) Passive Cooling Concepts for Concrete Containment Systems: Selection of the external condenser by comparing and reviewing between passive cooling concepts for concrete containment system concepts, survey and review of previous studies (theoretical mechanism of condensation heat transfer and effect of non-condensable gases) on the condensation phenomena, design and ...

Energy Technology Data Exchange (ETDEWEB)

The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native oxide--hydrocarbon layer during the Ni/GaAs, Pd/GaAs, and Pt/GaAs reactions is also investigated. Only the ...

Science.gov (United States)

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

Energy Technology Data Exchange (ETDEWEB)

In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

International Nuclear Information System (INIS)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.

International Nuclear Information System (INIS)

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

International Nuclear Information System (INIS)

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

Energy Technology Data Exchange (ETDEWEB)

In this work, we perform spectroscopic studies to characterize the energy transfer processes occurring in rare-earth doped lithium fluoride systems, aiming the optimization of the population inversion of these media. Yb{sup 3+} ion was used in order to probe the electron-phonon coupling in LiYF{sub 4}, LiGdF{sub 4} and LiLuF{sub 4} matrices. In these systems it was obtained the average phononenergy, the vibronic transition probability and Huang-Rhys coupling constant. These parameters are dependent on the crystal host and the LiLuF{sub 4} system presents excluded correlation effects, an electronic repulsion that weakens the vibronic coupling. The Tm:Ho:LiYF{sub 4} system was studied under diode laser pumping at 796 nm, aiming the 2 {mu}m emission optimization. The ideal conditions of concentration and laser power were determined favouring the latter emission. Upconversion processes of two photons were identified besides the energy transfer ...

Energy Technology Data Exchange (ETDEWEB)

As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type ...

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Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

Energy Technology Data Exchange (ETDEWEB)

In order to improve the long term reliability of lead-salt diode lasers, ohmic contacts of multilayer, thin-film structures consisting of In plus Au, Pt, Ni, and Pd have been studied. Diode lasers of PbSnTe fabricated with a variety of contacts were tested during room-temperature storage and during accelerated aging tests. The results show that contact reliablility can be improved when multiple overlapping films are used. After 4500 h of baking at 60 /sup 0/C, lasers with In-Au-Pd-Au contacts on both sides showed the least resistance increase (10%). For lasers with In-Au-Pt-Au contacts, 1 h of baking at 60 /sup 0/C is equivalent to 2 d storage at room temperature. Extrapolating these results, a 70% increase in contact resistance is expected for this type of laser after 9000 d of storage at room temperture. Our data also suggests that a smaller increase in contact resistance can be expected for lasers fabricated with In-Au-Ni-Au and In-Au-Pd-Au ...

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Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum. (orig.)

International Nuclear Information System (INIS)

We present the design, analysis, and results of the high brightness electron beam experiments currently under investigation at Sandia National Laboratories. The anticipated beam parameters are the following: energy 12 MeV, current 35 endash 40 kA, rms radius 0.5 mm, and pulse duration 40 ns full width at half-maximum. The accelerator is SABRE, a pulsed linear inductive voltage adder modified to higher impedance, and the electron source is a magnetically immersed foilless electron diode. 20 endash 30 T solenoidal magnets are required to insulate the diode and contain the beam to its extremely small-sized (1 mm) envelope. These experiments are designed to push the technology to produce the highest possible electron current in a submillimeter radius beam. Design, numerical simulations, and experimental results are presented. copyright 1997 American Institute of Physics.

International Nuclear Information System (INIS)

Engineering details of a high voltage driven corona-plasma ozone generator are described. The plasma diode of generator has coaxial cylindrical geometry with cathode located inside anode. Cathode is made of a large number of radial gas nozzles arranged on central tubular mast which admits oxygen gas. The sharp endings of the nozzles along with a set of corona rings create the high electric field at the cathode required for formation of dense corona plume responsible for O_3 evolution. A model of coronal plasma generation and ozone production is presented. The plasma formation is strongly dependent on the electric field and temperature in side diode where a high electron density in a low temperature negative corona is suited for high ozone yields. These are established by suitable regulation of A-K gap, voltage, oxygen pressure, and cathode-nozzle population.

Energy Technology Data Exchange (ETDEWEB)

A comparative study of three methods for extracting solar cell parameters of the single-diode lumped-circuit model is presented, using experimental characteristics collected from two silicon cells over a range of illuminations and temperatures. The results show that the curve-fitting method can often give erroneous parameter values. The 5-point methods are found to be reliable and accurate in situations where the model is a good approximation of cell performance. The analytical 5-point method, however, has the added advantage of simplicity. It is also found that for the cell measured, the single diode model is valid at illuminations above one-half AM1 but gives non-physical parameter values at lower illumination.

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack ...

Energy Technology Data Exchange (ETDEWEB)

CdTe/SnTe heterojunctions, prepared by EDRI (evaporation-diffusion en regime isotherme) and CSVT (close spaced vapour transport) techniques, have a spectral response in a wide wavelength range (0.3 - 1.5 ..mu..m) which exhibits two distinct bands, corresponding to carrier generation in each material of the couple. Experimental results are interpreted in terms of a Schottky diode model. (orig.).

International Nuclear Information System (INIS)

A diode-laser fluorescence experiment was performed in order to study fine-structure transitions between 5"2P states of rubidium atoms colliding with ground-state potassium or caesium atoms. The Rb(5"2P_3_/_2) state was optically excited and the intensity ratio of sensitized to direct fluorescence was measured. (author).

International Nuclear Information System (INIS)

This thesis dealt with the metal-organic gas phase epitaxy with nitrogen as carrier gas. For this first by means of three-dimensional modelings of the epitaxy process the influence of the carrier gas on the processes was explained. The optimization of the growth parameter for the whole light-emitting-diode structure in double-hetero arrangement resulted that an a temperature of 770 C and a V/ III-ratio of 150 layers with a high crystal quality could be reached.

Energy Technology Data Exchange (ETDEWEB)

The absolute absorption of ozone in the midinfrared has been measured relative to 253.7-nm ultraviolet absorption to an accuracy of 1% using a Bruker Fourier transform spectrometer. These new results agree with previous measurements by diode laser measurements after the latter are corrected for more recent infrared calculations and ultraviolet cross sections. They also agree with a determination based on refractive index measurements in the infrared. 16 refs., 4 figs., 3 tabs.

International Nuclear Information System (INIS)

Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 A within 3000 A wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier-carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in InGaAs but may be due to stimulated emission in InGaAsN. The results reveal that the carrier dynamics is ...

International Nuclear Information System (INIS)

Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 #mu#m was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from ...

International Nuclear Information System (INIS)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K_#alpha# X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K_#alpha# X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the conditions necessary for ...

Science.gov (United States)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al{sub {ital x}}Ga{sub 1{minus}{ital x}}InP{sub 2}; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. {copyright} {ital 1996 The American Physical Society.}

Energy Technology Data Exchange (ETDEWEB)

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs reactions studied are ...

Energy Technology Data Exchange (ETDEWEB)

A review is given of the state-of-the-art of single and polycrystalline solar cells, which includes a short theoretical review, laboratory achievements, and production methods. The Si single and polycrystalline cell and the amorphous Si cell are described, including material preparation, crystal and sheet growth, and cell and panel production. Promising second generation thin film solar cells including GaAs, CdS(CuInSe/sub 2/), and CdTe are briefly described. Economical aspects are discussed.

Energy Technology Data Exchange (ETDEWEB)

A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

Energy Technology Data Exchange (ETDEWEB)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

Science.gov (United States)

In an earlier paper (Phys. Rev. Lett. 66, 41 (1991)), we calculated both the dielectric constant ({epsilon}{sub {infinity}}) and the nonlinear optical susceptibilities for second-harmonic generation ({chi}{sup (2)}) in the static limit for AlP, AlAs, GaP, and GaAs in the local-density approximation with and without a self-energy correction in the form of a scissors operator,'' including local-field effects. In this paper, we expand our presentation of this calculation. Agreement with experiment to within 15% for the nonlinear susceptibility is demonstrated where experiments are available (GaP and GaAs); the dielectric constants are in no worse than 4% agreement with experiment. The virtual hole'' contributions are reformulated to avoid large numerical cancellations in the case of near degeneracies. The virtual electron'' terms dominate over the virtual hole'' terms ...

Energy Technology Data Exchange (ETDEWEB)

This thesis details the first direct ultrafast measurements of the dynamic thermal expansion of a surface and the temperature dependent surface thermal diffusivity using a two-color reflection transient grating technique. Studies were performed on p-type, n-type, and undoped GaAs(100) samples over a wide range of temperatures. By utilizing a 90 fs ultraviolet probe with visible excitation beams, the effects of interband saturation and carrier dynamics become negligible; thus lattice expansion due to heating and subsequent contraction caused by cooling provided the dominant influence on the probe. At room temperature a rise due to thermal expansion was observed, corresponding to a maximum net displacement of {approximately} 1 {Angstrom} at 32 ps. The diffracted signal was composed of two components, thermal expansion of the surface and heat flow away from the surface, thus allowing a determination of the rate of expansion as well as the surface thermal diffusivity, ...

Energy Technology Data Exchange (ETDEWEB)

Electronic trap densities at the indium tin oxide (ITO)/hole transport layer (HTL) interface in operating organic light-emitting diodes (OLEDs) are characterized in situ using impedance spectroscopy. For OLEDs with a high density of active trap states, negative values of the frequency derivative of resistance are clearly observable for frequencies on the order of 10 kHz, whereas positive values are observed when the trap density is low With this technique, it is revealed that the trap density is minimized via the introduction of a TPD-Si{sub 2} (4,4'-bis[(p-trichlorosilylpropylphenyl) phenylamino]-biphenyl) passivation layer at the ITO/HTL interface or by the application of large electric fields during device operation. Furthermore, impedance spectroscopy illustrates that the ITO/HTL interface is not a simple series resistance when traps are present since they are shown not to contribute to high frequency conduction. Overall, this paper demonstrates that ...

Energy Technology Data Exchange (ETDEWEB)

The properties and low pressure organometallic vapor phase epitaxy of Ga{sub x}In{sub 1{minus}x}P/(AlGa){sub 0.5}In{sub 0.5}P quantum well (QW) laser diode heterostructures with Al{sub 0.5}In{sub 0.5}P cladding layers, and having wavelength 614 < {lambda} < 690 nm, are described. At longer wavelengths ({lambda} > 660 nm), threshold current densities under 200 A/cm{sup 2} and efficiencies greater than 75% result from a biaxially-compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.

International Nuclear Information System (INIS)

The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.

International Nuclear Information System (INIS)

We report on a promising approach to high-sensitivity anisotropy measurements using a high-finesse cavity locked by optical feedback to a diode laser. We provide a simple and effective way to decouple the weak anisotropy of interest from the inherent mirror's birefringence whose drift may be identified as the key limiting parameter in cavity-based techniques. We demonstrate a shot-noise-limited phase shift resolution previously inaccessible in an optical cavity, readily achieving the state-of-the-art level of 3x10"-"1"3 rad.

International Nuclear Information System (INIS)

Elemental substitution of Ca by Y was investigated for Ca-#alpha#-SiAlON:Eu yellow phosphors, which is useful for the white light-emitting diode lamps of phosphor conversion type. Depending on the ratio of the elemental substitution, not only the red shift of emission in wavelength occurred but also the figure of the excitation spectra changed. Their excitation band widths and flatness were discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Energy Technology Data Exchange (ETDEWEB)

This thesis dealt with the metal-organic gas phase epitaxy with nitrogen as carrier gas. For this first by means of three-dimensional modelings of the epitaxy process the influence of the carrier gas on the processes was explained. The optimization of the growth parameter for the whole light-emitting-diode structure in double-hetero arrangement resulted that an a temperature of 770 C and a V/ III-ratio of 150 layers with a high crystal quality could be reached.

Energy Technology Data Exchange (ETDEWEB)

An apparatus is provided for rapidly restarting the flow of coolant through the cold electromagnetic shield of a superconducting rotor following a thermal transient episode. A vortex diode inhibits coolant flow in the undesirable reverse direction and encourages the reestablishment of a normal thermosyphon cooling loop flow quickly following the termination of a thermal transient such as that caused by transmission line faults. The present invention requires no moving parts and may therefore be permanently sealed in the superconducting rotor without risk of costly repair efforts caused by components failure.

Science.gov (United States)

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

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The differences are highlighted of various aspects of behaviour of the luminescence signal from feldspar when stimulated by green light and when stimulated by infrared radiation. In respect of bleaching, a comparison is made of the influence of white light (daylight) on the two stimulated luminescence signals, as well as a comparison of the influence of infrared exposure on the green-stimulated signal with the influence of green exposure on the infrared-stimulated signal. The influence of preheating on the two stimulated signals is also compared. Light-emitting diode systems were used for both green and infrared stimulation. The observations are considered in relation to the mechanism relevant to green- and infrared-stimulated luminescence from feldspar. (author).

Energy Technology Data Exchange (ETDEWEB)

Excitation transfer between the 3S[sub 1/2] states of the lithium isotopes [sup 6]Li and [sup 7]Li is measured in a thermionic diode. The 3S level is excited by off-resonant two-photon transitions with a single mode cw laser. The relative densities of the directly excited and collisionally populated levels are probed by further laser excitation to the 12P levels. An energy transfer cross section of 585 A[sup 2] [+-] 160 A[sup 2] is found at the experimental temperature of about 850 K. A simple semiclassical calculation yields a cross section of 450 A[sup 2]. (orig.)

British Library Electronic Table of Contents (United Kingdom)

An optical fiber methane sensing system utilizing a super-luminescent diode (SLD) in the 1.33-mm band and a fiber Fabry-Perot tunable filter (FFP-TF) is developed. A two-step reference measuring method, which is based on differential absorption technique, is employed; a reference channel is introduced to eliminate the fluctuation of the illuminant spectrum, and the reference wavelength acquired by tuning the FFP-TF is introduced to eliminate the environmental influence. The two-step reference measuring method has improved the reliability and stability of the system. A minimum detectable methane concentration of 0.3% has been experimentally achieved.

International Nuclear Information System (INIS)

Single-phased Sr3B2SiO8:Eu3+ phosphor was prepared by a solid-state method at 1020 oC. The luminescence spectra showed that Sr3B2SiO8:Eu3+ phosphor can be effectively excited by near ultraviolet light (393 nm) and blue light (464 nm). When excited at 393 or 464 nm Sr3B2SiO8:Eu3+ exhibited the main emission peaks at 611 and 620 nm, which resulted from the supersensitive 5D0#->#7F2 transition of Eu3+. The luminescence intensity of Sr3B2SiO8:Eu3+ at 611 and 620 nm reached the maximum when the doping content of Eu3+ was 4.5 mol%. Its chromaticity coordinates (0.646, 0.354) were very close to the NTSC standard values (0.67, 0.33). Thus, Sr3B2SiO8:Eu3+ is considered to be an efficient red-emitting phosphor for long-UV InGaN-based light-emitting diodes. - Highlights: ? Sr3B2SiO8:Eu3+ was synthesized using solid-state reaction method for the first time. ? The phosphor can be efficiently excited by the near-UV chips and gives strong red emission. ? The phosphor is a ...

Energy Technology Data Exchange (ETDEWEB)

The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The current status of non-silicon photovoltaic solar cells is discussed including the identification of current technical and economic issues and future research directions for potential high efficiency low cost technologies. This review covers such advanced materials as CdS/Cu/sub 2/S, CdS/CuInSe/sub 2/, and GaAs homojunction and heterojunction devices; such emerging materials as InP, Zn/sub 3/P/sub 2/ and CdTe; and liquid junction electrochemical photovoltaic cells. An attempt is made to compare the current relative status of these various technologies and to indicate their near term potential where possible. 105 refs.

International Nuclear Information System (INIS)

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

Energy Technology Data Exchange (ETDEWEB)

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

International Nuclear Information System (INIS)

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

Energy Technology Data Exchange (ETDEWEB)

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

CERN Document Server

RF Cavities and Power Amplifier for the Compact Proton Synchrotron

CERN Document Server

Low Energy Part of the CONCERT High-Power Proton Linac

International Nuclear Information System (INIS)

This is a manuscript for a lecture contents: 1) Steam power and fundamentals of the steam power process, 3) conventional, nuclear and other steam generation processes, 4) cooling systems for steam power plants, 5) gas turbine power plants and combined-cycle power plants, 6) cogeneration, 7) development of thermal power plants and environmental effects. (GL).

International Science & Technology Center (ISTC)

Characterization and Testing of Coated Nickel- and Iron-Based Superalloys for Application in High-Temperature Power Installations

Science.gov (United States)

Heterostructures based on AlGaInP alloy compounds are very attractive for visible semiconductor lasers, heterojunction bipolar transistors (HBTs), and high-electron-mobility transistors (HEMTs) lattice matched to GaAs substrates. Several wet etching solutions for AlGaP of different compositions have been studied. Al{sub 0.5}Ga{sub 0.5}P is found to etch in HF, H{sub 3}PO{sub 4}, hyphosphorous acid (HOPH{sub 2}:O), HCl, KOH, and 1% Br{sub 2}-methanol (MeOH). Etching of Al{sub 0.5}Ga{sub 0.5}P in HCl is reaction limited with an activation energy of {approximately}54.4 kJ/mol. At fixed conditions, the etch rates of Al{sub x}Ga{sub 1{minus}x}P vary exponentially with x in HF and HCl, while in 1% Br{sub 2}-MeOH and mixtures of HCl and HNO{sub 3} the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for AlGaP over InGaP or AlInP with high selectivity, while HCl is useful for the reverse case. The use of 1% Br{sub 2}-MeOH ...

International Nuclear Information System (INIS)

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier ...

Energy Technology Data Exchange (ETDEWEB)

GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias ...

British Library Electronic Table of Contents (United Kingdom)

Various pyranocoumarins, calophyllolide, inophyllums B, C, G1, G2 and P, from Calophyllum inophyllum (Clusiaceae) leaves of French Polynesia (Austral, Marquesas, Society and Tuamotu archipelagos) have been determined in 136 leaf extracts using a high pressure liquid chromatography-UV-diode array detection (HPLC-UV-DAD) technique. Results show a wide range in chemical composition within trees growing on eighteen islands. The use of multivariate statistical analyses (PCA) shows geographical distribution of inophyllums and indicate those rich in HIV-1 active (+)-inophyllums. Inophyllum B and P contents (0.0-39.0 and 0.0-21.8mgkg-1, respectively) confirm the chemodiversity of this species within the large area of French Polynesia. The study suggests the presence of interesting chemotypes which...

International Nuclear Information System (INIS)

Point contact Josephson junctions can function as millimeter wave heterodyne mixers with conversion gain. The best results achieved thus far show a single sideband conversion gain of 1.3 and a mixer contribution to the system noise temperature of 54"0K. Both of these results are approximately 5 times better than the best published figures for cooled Schottky barrier diode mixers operated at the same frequency. The measured noise for a variety of junctions can be expressed as a universal function of the normalized rf frequency #OMEGA# = h#omega#/2eI/sub c/R. It is about a factor 2 larger than the calculated noise arising from the thermal noise in the junction shunt resistance, R. The noise calculation was done for the resistively shunted junction model using an analog junction simulator.

Energy Technology Data Exchange (ETDEWEB)

Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In{sub 0.5}(Al{sub {ital x}}Ga{sub 1{minus}{ital x}}){sub 0.5}P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.

Science.gov (United States)

The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.

British Library Electronic Table of Contents (United Kingdom)

Yb3+?Tm3+ codoped tellurite glasses containing silver nanoparticles (NPs) were synthesized and characterized using transmission electron microscopy and optical techniques. The samples? composition and the nucleation of NPs were investigated using electron diffraction and energy dispersive spectroscopy. For the optical experiments, the samples were excited using a diode laser operating at 980?nm, in resonance with the Yb3+ transition 2F7/2?2F5/2. Photoluminescence (PL) bands corresponding to Tm3+ transitions were observed at 480, 650, and 800?nm due to the Yb3+? Tm3+ energy transfer. PL enhancement was achieved by heat-treatment of the samples at 325?C during different time intervals. The growth of the PL bands correlates with the increase of the silver NPs concentration. The relevant mecha...

British Library Electronic Table of Contents (United Kingdom)

Basal stem rot of oil palm (OP) by Ganoderma boninense is of major economic concern and it is the predominant disease of OP in SE Asia. Also, other plantation crops are affected by Ganoderma. The early detection of symptoms is crucial for control, although effective methods remain elusive. Ergosterol is the principal sterol of fungi and plays an essential role in the cell membrane and other cellular constituents. The analysis of ergosterol is useful for fungal detection in solid plant substrates. The present report compares ergosterol concentration in sound and decayed OP seedlings and mature plants using HPLC with diode array detection. The disease of OP requires to be considered as a white rot process where fungal biomass will increase from a low to high level as the infection progresses...

Energy Technology Data Exchange (ETDEWEB)

A static plasma grating has been demonstrated experimentally in a large optical cavity FIB-DBR GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam (FIB). The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimization of the laser design is developed and presented here. The computed results show that /kappa/ can be increased by more than an order of magnitude over the 15 cm/sup -1/ experimentally. Therefore, FIB-DBR (or -DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.

British Library Electronic Table of Contents (United Kingdom)

The homogeneity of a helium dielectric barrier discharge, working at atmospheric pressure and containing oxygen as contaminant, is assessed by mapping the spatial distribution of oxygen metastable atoms in relation to the uniformity of surface properties. Tunable diode laser absorption spectroscopy is used to monitor the time evolution of the absorption coefficient corresponding to the oxygen metastable atoms on the 35S2 level, as a function of the laser absorbing path, whereas bi-dimensional Abel transform is used to obtain local information on the space distribution of the metastable atoms in the discharge. The radial distribution of the surface properties is investigated using atomic force microscopy, contact angle measurement and X-ray photoelectron spectroscopy. The results show that ...

Energy Technology Data Exchange (ETDEWEB)

Researchers at the Laboratory of Nuclear Microanalysis in Besancon (France) are developing and improving radon measurements in order to detect and analyse, more precisely radon emanation anomalies in both fields of Earth Sciences and Radioprotection. In order to characterize radon emanation, two complementary techniques are developed; continuous measurement through a portable proportional counter and passive measurements by nuclear track detectors for both fieldwork and laboratory analysis. A mathematical model is being devised to interpret the nuclear track detector response. This model is performed according to the device characteristics: type of detectors, shape and size of cells and whether a membrane is used or not. In addition to the theoritical study, experimental radon concentration measurements will be reported. (author).

Science.gov (United States)

A Pulsed Radiation Dosimetry System designed to measure radiation produced by particle accelerators is described. The problems associated with total-dose measurement of irregular shaped pulses of ionizing radiation have been simplified. The system responds to extremely narrow pulses of charged particles or X-rays using a pin diode as the detector. Direct readout of dose in rads (Si) is displayed on a 3-1/2 digit digital panel meter. The system will operate in either the multiple-pulse or single-pulse mode. The multiple-pulse mode would be useful in monitoring or tuning a linear accelerator. In the single-pulse mode the system will automatically display total dose of a transient event in real time and hold that measurement indefinitely or until the next measurement is made. The system features an automatic reset in either mode.

Science.gov (United States)

We report the characteristics of visible vertical cavity surface emitting laser diodes. Wafers are grown such that the Fabry--Perot resonance wavelength changes with position from 690 to 620 nm, overlapping to varying degrees with the [ital n]=1 and [ital n]=2 quantum well gain peaks at [similar to]670 and 650 nm. Gain guided devices are tested across the entire wafer, and pulsed room temperature lasing is observed from 634.6 to 663.2 nm. Our results suggest that gain contributions from the second quantized state are required to overcome high cavity losses in order to achieve lasing.

Energy Technology Data Exchange (ETDEWEB)

Some general topical information (generating capacity and electric power generation, development and structure of electric power consumption, frequency and peak load, exchange of electricity) is followed by an account of the situation of coal-fired power plants, hydroelectric power plants and nuclear power plants, and a brief discussion of the environmental situation (emissions and wastes, immissions, and air pollution abatement measures for power plants). (orig./UA).

Science.gov (United States)

... CycleSim models an IBM PowerPC 405GP system-on-a-chip and includes a cycle-accurate, event-based power model of the processor core and ...

Science.gov (United States)

... 4. TITLE AND SUBTITLE Global Vigilance, Reach, and Power? Made Possible only with a Robust 5a. ... Global Vigilance, Reach, and Power? ...

Energy Technology Data Exchange (ETDEWEB)

The production and characterisation of thin films made from molybdenum sulphide, molybdenum selenide, tungsten sulphide and tungsten selenide are described. The electronic properties of the thin films were examined by Hall measurements and by thermal sensors. For the MoSe[sub 2] films, the majority of the samples were n-conducting and p-conduction was only found for a few examples. All the other films (MoS[sub 2], WS[sub 2], WSe[sub 2]) were p-conducting. The electrical transport properties of the thin films are comparable to those of single crystals. With these thin films as absorber materials, it was possible for the first time to produce the polycrystalline solid n-ZnO/p-MoSe[sub 2], n-ZnO/WSe[sub 2], n-ZnO/WS[sub 2]- and n-ITO/WS[sub 2] solar cells. In spite of not yet optimized diode geometry (lateral build-up), a maximum short circuit current of I[sub SC] = 18 mA/cm[sup 2] was achieved for the MoSe[sub 2] diode. (orig.)

International Nuclear Information System (INIS)

This study demonstrates amplified spontaneous emission (ASE) of the ultraviolet (UV) electroluminescence (EL) from ZnO at #lambda##approx#380 nm in the n-ZnO/ZnO nanodots-SiO_2 composite/p- Al_0_._1_2Ga_0_._8_8N heterojunction light-emitting diode. A SiO_2 layer embedded with ZnO nanodots was prepared on the p-type Al_0_._1_2Ga_0_._8_8N using spin-on coating of SiO_2 nanoparticles followed by atomic layer deposition (ALD) of ZnO. An n-type Al-doped ZnO layer was deposited upon the ZnO nanodots-SiO_2 composite layer also by the ALD technique. High-resolution transmission electron microscopy (HRTEM) reveals that the ZnO nanodots embedded in the SiO_2 matrix have diameters of 3-8 nm and the wurtzite crystal structure, which allows the transport of carriers through the thick ZnO nanodots-SiO_2 composite layer. The high quality of the n-ZnO layer was manifested by the well crystallized lattice image in the HRTEM picture and the low-threshold optically pumped stimulated ...

ScienceCinema

...the effects of global warming ...

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The development of a high power density sodium sulphur battery with a five-year maintenance-free life is described. These batteries are likely to be used in industrial trucks, milk floats, electric cars, storing power station output and power for satellites. (U.K.).

Norwegian Open Research Archives (NORA)

Full Text Available

Norwegian Open Research Archives (NORA)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The research will characterize and evaluate advanced S-CO2 Brayton cycle power generation with a modular power tower CSP system.

Science.gov (United States)

... by USAFRICOM enable the geographic combatant commander to incorporate all elements ofnational power by using the Smart Power model. ...

Science.gov (United States)

Sunflower power conversion system development test program

CERN Document Server

Overview on some functional issues related to the uninterrupible power systems design

Science.gov (United States)

... 44 2. Luminance Power Spectral Density Measurements ..... 44 ... 50 4. Chrominance Power Spectral Density Measurements ..... 53 ...

International Nuclear Information System (INIS)

... Power Company, Tokyo (Japan) Ishida, T. Japan Atomic Power Company,

Energy Technology Data Exchange (ETDEWEB)

This paper is concerned with the application of a new fuzzy inference method to the design of fuzzy power system stabilizer. Based on Truth-Value-Flow-Inference (TVFI), a fuzzy logic controlled power system stabilizer is proposed to enhance the stability of power system with weak or negative damping. The design of the proposed fuzzy power system stabilizer is presented. Numerical simulation results are presented and compared with two other kinds of fuzzy power system stabilizers. (author)

Science.gov (United States)

Offers an updated version of French and Raven's bases of social power model and describes Raven's power/interaction model of interpersonal influence. Applies elements of both models to school consultation practices. Explores social power and influence occurring during school consultation. Describes a research agenda for further exploration of social power within consultation. (RJM)

International Nuclear Information System (INIS)

This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ...

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)b2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed ...

International Nuclear Information System (INIS)

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, including the ...

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion implantation.

Energy Technology Data Exchange (ETDEWEB)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

British Library Electronic Table of Contents (United Kingdom)

Abstract Visible blue cathodoluminescence (CL), photoluminescence (PL), x-ray excited optical luminescence (XEOL) and electroluminescence (EL) via Zf free excitonic emission have been obtained from CuBr thin films deposited on glass, Cr coated glass, GaAs and Si substrates. In addition to the Zf emission several peaks corresponding to Cu+ emissions via 3d94s - d10 transitions were observed on the AC EL spectrum at 2.10, 2.7, 3.03, 3.07 and 3.80 eV. X-ray diffraction (XRD) measurements confirmed that the vacuum evaporated CuBr thin films grow preferentially with a (111) orientation irrespective of the substrate. While the AC voltage source was found to have no detrimental effects on CuBr thin films, cathodic deposition of Cu metal via electrolytic decomposition was observed under steady sta...

International Nuclear Information System (INIS)

The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range of 1#centre dot#10"1"7 cm"-"3 - 10"1"8 cm"-"3. (author)

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

Energy Technology Data Exchange (ETDEWEB)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

CERN Document Server

Reactive power plays an important role in supporting the real power transfer by maintaining voltage stability and system reliability. It is a critical element for a transmission operator to ensure the reliability of an electric system while minimizing the cost associated with it. The traditional objectives of reactive power dispatch are focused on the technical side of reactive support such as minimization of transmission losses. Reactive power cost compensation to a generator is based on the incurred cost of its reactive power contribution less the cost of its obligation to support the active power delivery. In this paper an efficient Particle Swarm Optimization (PSO) based reactive power optimization approach is presented. The optimal reactive power dispatch problem is a nonlinear optimization problem with several ...

International Nuclear Information System (INIS)

Due to development of electric power system and considering an increase of electrical energy consumption, needs for larger units in new power plants are obvious. Connection of large nuclear power plants to the grid, depending on their power and location, usually requires significant investments in transmission network development and construction. Considering the capacity of the 400 kV transmission network in Croatia, this problem is evident. This paper deals with the possibilities of nuclear power plants construction, as one possible option in electric power system development, and their interconnection to the electricity grid. (author).

Energy Technology Data Exchange (ETDEWEB)

All power plant engineers face the problem of peak power demands. Pumped storage plants are used to generate peak load power by pumping up water utilizing off-peak energy of hydrothermal and thermonuclear plants. This is a reference to cover hydroelectric power generation with emphasis on engineering to meet peak power demands by means of pumped storage plants, tidal power plants, and low head power generation. Text covers hydrology, mechanical and electrical equipment, accessories such as penstocks and valves, and civil engineering considerations. Contains descriptions of several existing plants. Includes 200 diagrams and 50 photographs.

International Nuclear Information System (INIS)

The present volume on energy and the environment discusses space power requirements, space power systems, space power systems hardware, space radioisotope systems, space solar arrays, space solar cells, space station power, and terrestrial applications of aerospace technology. Attention is given to NASA future space power requirements and issues, the design of a battery charger for the NASA EOS Space Platform, in situ carbon dioxide fixation on Mars, and a preliminary design update of the CRAF/Cassini Power Subsystem. Topics addressed include concentrator testing using projected images, solar power satellites and demonstraton platforms from nonterrestrial materials, a mass sensitivity analysis of lunar orbiting beam power systems, and a power-beaming-based infrastructure for space ...

Energy Technology Data Exchange (ETDEWEB)

The difficulty in making good Ohmic contact at the interfaces with p-doped ZnSe is an important problem hindering the realization of blue-light-emitting diode lasers based on the II-VI semiconductor technology. So far no metal or semiconductor material has been found to have a low enough barrier at the (001) interface with ZnSe. A possible solution to this problem is the insertion of a so-called {ital barrier-reduction layer} at the interface with ZnSe. We have investigated the interface formation energies and valence-band offsets at the (001) interface between Al{sub x}Ga{sub 0.5{minus}x}In{sub 0.5}P and ZnSe. The results of our calculations show the existence of a strong interdependence between the valence-band offset and the interface geometric structure. The interface is found to have structural and electronic similarities to the GaAs-ZnSe(001) system. The very low values obtained for the valence-band offset confirm the possibility of using this material as a ...

International Nuclear Information System (INIS)

Semiconductor quantum dots (QDs) are a promising approach to realize a single-photon source. To avoid bulky and expensive laser systems for future applications, electrical excitation is desirable. InP QDs are especially suited, as they emit in the red spectral range and therefore in the optimal range of commercial detectors. Additionally, they have been shown to be capable of emitting single photons up to 80 K. Thus, we embedded InP QDs in the intrinsic region of a p-i-n diode. To form single devices, 100 #mu#m mesas were etched and supplied with electrical contacts. We investigated the electroluminescence from single QDs and performed second-order auto correlation measurements to verify single-photon emission. To prevent expensive helium cooling and reach operation above 80 K, we investigated the influence of elevated temperature on the performance of our device. Since triggered single-photon emission is required for most applications, sub-nanosecond pulses were ...

International Nuclear Information System (INIS)

The optical properties of divalent europium activated Ca-#alpha#-SiAlON were investigated and the excitation and emission processes were discussed. The emission wavelength is influenced by the activator concentration of Eu more than the codopant concentration of Ca, in case of the same matrix composition of #alpha#-SiAlON. The red-shift of emission increases when the concentration of Eu increases. In addition, it was revealed that the red-shift of emission would be caused by the construction of the package of optical device. The correlated color temperature becomes low by the red-shift for the white light-emitting diode (LED) lamp using Ca-#alpha#-SiAlON:Eu phosphor when the phosphor powder concentration increases in the transparent resin which coats the primary light source of a blue LED die. The additional red-shift can be observed when the excessive amount of phosphor coating is intentionally poured to the white LED lamps. These red-shifts of emission wavelength ...

International Nuclear Information System (INIS)

A new foilless diode with a non-magnetically immersed cathode was recently designed and built for the Sandia Recirculating Linear Accelerator (RLA). Because there is also no radial component of electric field at the cathode, the electron beam starts almost parallel and is matched to a solenoidal transport system with minimum increase in divergence and radius. The electrode emission surface is specified by an area covered with felt which undergoes explosive electron emission at low electrical field stresses (60 kV/cm). The 1.7 MV, 4.8-kA produced beam is transported 1.5 meters to the injection region of the racetrack via a system of solenoids and focusing coils. The maximum transverse velocity component at injection point (1.5 m downstream from the cathode surface) is #beta# perpendicular = 0.03 and the radius r = 2.8 cm which give a quite small beam emittance #epsilon# = 0.08 rad-cm. Three- dimensional numerical simulations suggest that tangential injection into ...

Science.gov (United States)

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found parameters of the Schottky barrier. Details ...

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method provides a new avenue ...

Energy Technology Data Exchange (ETDEWEB)

We used the recuperation effect (see also 'Recuperation of infrared stimulated luminescence of feldspars' in this issue) for investigating the connection between infrared- and greenlight-stimulated luminescence (IRSL and GLSL) of feldspars by performing a 'double-bleach recuperation' experiment. A diode system was used for infrared (IR) stimulation, and a filtered-light unit for greenlight (GL) stimulation. Powdered feldspar samples (2 mg each) of known chemical characterisation from a mineral collection were used. After beta-irradiation with 180 Gy and storage in the dark for several weeks feldspar aliquots were bleached down to a residual level of {approx}1% of the initial level, first with IR and subsequently with GL. For both stimulations, detection of the stimulated luminescence was carried out in the near ultraviolet region (around 260-360 nm, peaked at 340 nm). Other aliquots were bleached in reverse order (1st GL, 2nd ...

International Nuclear Information System (INIS)

The application of robotics for repair, refurbishing or dismantling of nuclear installations implies eventually severe radiation resistance requirements on embarked components and subsystems. This is particularly critical when optical sensing is considered. Optoelectronic components and optical fibers are indeed quite sensitive to radiation, and without special design are rapidly out-of-operation in such an environment. This paper reports the results of a series of #gamma# irradiation experiments on such devices, and identify their behavior under radiation. Test results show that carefully selected optical fibers can keep their radiation induced attenuation lower than 0.3 dB/m even up to a total dose of 10 MGy. Temperature annealing can even lower this attenuation down to 0.1 dB/m. On the other hand, commercially available light emitting diodes and photodiodes present attenuations figures up to 15 dB, even after a gamma irradiation as low as 250 kGy. However, ...

International Nuclear Information System (INIS)

We have investigated the correlation between V-shaped defect formation and the optical properties of AlGaN/(In)GaN multiple quantum wells (MQWs) grown under different growth conditions and then demonstrated the characteristics of fabricated ultraviolet (UV) light emitting diodes (LEDs). From the temperature-dependent photoluminescence (PL) measurement, the internal quantum efficiency for 300 K was obtained as 43.6% for a sample with a low density of V-defects in a MQW and 13.7% for a sample with a high density of V-defects. The carrier lifetime based on the time resolved PL measurement at room temperature was 0.32 ns for a sample with a high density of V-defects and 1.26 ns for a sample with a low density of V-defects. And we also found that the density of V-defects affected the external quantum efficiency and wall plug efficiency of the fabricated UV LEDs. (fast track communication)

Energy Technology Data Exchange (ETDEWEB)

In this study, the adoptable essential technologies and reference design concept of the advanced reactor were developed and related basic experiments were performed. (1) Once-through Helical Steam Generator: a performance analysis computer code for heli-coiled steam generator was developed for thermal sizing of steam generator and determination of thermal-hydraulic parameters. (2) Self-pressurizing pressurizer : a performance analysis computer code for cold pressurizer was developed. (3) Control rod drive mechanism for fine control : type and function were surveyed. (4) CHF in passive PWR condition : development of the prediction model bundle CHF by introducing the correction factor from the data base. (5) Passive cooling concepts for concrete containment systems: development of the PCCS heat transfer coefficient. (6) Steam injector concepts: analysis and experiment were conducted. (7) Fluidic diode concepts : analysis and experiment were conducted. (8) Wet thermal ...

International Nuclear Information System (INIS)

CEA-Valduc produces some radioactive waste (mainly alpha emitters). Legislation requires producers to sort their waste by activity and type of isotopes, and to package them in order to forward them to the appropriate reprocessing or storage facility. Our lab LMDE (laboratory for measurements on nuclear wastes and valuation) is in charge of the characterization of the majority of waste produced by CEA-Valduc. Among non-destructive methods to characterize a radioactive object, gamma-spectroscopy is one of the most efficient. We present to this conference the method we use to characterize nuclear waste and the system we developed to characterize our germanium detectors. The goal of this system is to obtain reliable numerical models of our detectors and calculate their efficiency curves. Measurements are necessary to checks models and improve them. These measurements are made on a bench using pinpoint sources ("1"3"3Ba, "1"5"2Eu) from 60 keV to 1500 keV, with distances from 'on contact' to ...

International Nuclear Information System (INIS)

Various diagnostics techniques for condition monitoring and life prediction of fluid power components and system are discussed. Though some of the techniques are very promising but may not be accepted because of increase in the instrumentation, it is planned to implement these techniques on various circuits of Fluid Power Lab for further improving and developing these for direct implementation in various fluid power circuits of power reactors. (author). 6 figs.

Energy Technology Data Exchange (ETDEWEB)

A mathematical model of the multi machine electric power system to analyse its dynamics has been worked out. The effectivity of the power system stabilizer developed in the one machine system has been tested by means of this model. The influence of the arrangement of the stabilizers on the stability of the electric power system has also been investigated. High damping of electromechanical transient processes has been achieved. 7 refs., 1 tab., 5 figs.

Energy Technology Data Exchange (ETDEWEB)

The report describes the following: overview of the Russian power industry; electric power equipment of Russia; power industry development forecast for Russia; clean coal technology demonstration program of the US Department of Energy; reduction of coal TPS (thermal power station) environmental impacts in Russia; and base options of advanced coal thermal power plants. Terms of the application of clean coal technology at Russian TPS are discussed in the Conclusions.

International Nuclear Information System (INIS)

The goal of this work is to present a systematic Monte Carlo validation study on the clinical implementation of the enhanced dynamic wedges (EDWs) into the Pinnacle"3 (Philips Medical Systems, Fitchburg, WI) treatment planning system (TPS) and QA procedures for patient plan verification treated with EDWs. Modeling of EDW beams in the Pinnacle"3 TPS, which employs a collapsed-cone convolution superposition (CCCS) dose model, was based on a combination of measured open-beam data and the 'Golden Segmented Treatment Table' (GSTT) provided by Varian for each photon beam energy. To validate EDW models, dose profiles of 6 and 10 MV photon beams from a Clinac 2100 C/D were measured in virtual water at depths from near-surface to 30 cm for a wide range of field sizes and wedge angles using the Profiler 2 (Sun Nuclear Corporation, Melbourne, FL) diode array system. The EDW output factors (EDWOFs) for square fields from 4 to 20 cm wide were measured in virtual water using a ...

International Nuclear Information System (INIS)

The article gives a brief description of the state of the nuclear power engineering in Ukraine and in the world as of today. There are basic organizational and practical actions on scientific and technical maintenance of the Ukraine nuclear power complex presented in the article.

Science.gov (United States)

... trees, data showing a better fit to a power model than to a negative exponential model. Invading Pinus ... power law models were significantly negative. The inverse power model accounted for a considerabl...

International Nuclear Information System (INIS)

Papers are presented on space power requirements and issues, space photovoltaic systems, space solar dynamic systems, space thermal systems, manned and unmanned space power systems, thermionics, and thermoelectrics. Also considered are high power devices for space power systems, high power conversion for space power systems, 1-10 kWe nuclear space power sources, 100-kW class nuclear power concepts, space reactor safety, and multimegawatt space nuclear power systems. Other topics include space power systems automation, space kilovolt technology, space power electronics, space lithium and nickel-cadmium batteries, lithium sodium storage, and space fuel cells. Papers are also presented on space nickel hydrogen batteries, alternative energy concepts and fuels, ...

Science.gov (United States)

The frequency dependence of the lasing power of a He-Ne laser was studied using the electrooptic effect in a KDP crystal. The gain profile of the power curve was found to differ noticeably between the high-frequency and low-frequency edges. (AIP). (AIP)

Energy Technology Data Exchange (ETDEWEB)

Deregulation of the electric power industry in Alberta holds the prospect of providing greater choice for customers. One such option will be `green power` which is provided by renewable energy technologies. The energy produced would be without environmental impacts such as air emissions, water pollution, flooding, thermal emissions or waste by-products. Wind power, small scale hydro power, photovoltaics and biomass technologies have been termed as `green power`. The choices that customers make will not be focused on price alone. Market forces are emerging to demand reduction in emissions which will result in a market for `green energy` products and facilitate achieving goals for a sustainable future.

Energy Technology Data Exchange (ETDEWEB)

In response to the need of the Strategic Defence Initiative (SDI) and long range space exploration and extra-terrestrial basing by the National Air and Space Administration (NASA), concepts for nuclear power systems in the multi-megawatt levels are being evaluated. The requirements for these power systems are being driven primarily by the need to minimize weight and maximize safety and reliability. This paper discusses the present requirements for space based advanced power systems, technological issues associated with the development of these advanced nuclear power systems, and some of the concepts proposed for generating large amounts of power in space. (author).

Energy Technology Data Exchange (ETDEWEB)

Large scale steam storage power generation, one of the new energy storage systems for the future of inflexible electric power sources consisting of nuclear and coal power plants has been studied on the subjects of the systems to be attached to coal and nuclear power units, of the definition of storage efficiency and of the vertical steam storage vessel technology. Steam storage power generation may be hopeful for its higher efficiency similarly defined as of pumped storage plants while high temperature heat storage and the internal structure of large vertical steam storage vessel (accumulator) need to be developed.

Energy Technology Data Exchange (ETDEWEB)

A probabilistic method for assessing the profitability of reactive power compensation devices such as capacitors, static VAR compensators and generators, which improve network security, was described. Since network development is limited by environmental constraints, power networks are operated close to their limits. Because of this fact transmission network planning increasingly relies on techno-economic models to improve network security and profitability. The proposed method consists of analyzing large numbers of constrained power system states, extracted from power system simulation exercises. The paper describes details of the method and provides an example of a numerical application on a part of the French power transmission system. 10 refs., 8 figs.

Energy Technology Data Exchange (ETDEWEB)

The article presents briefly the plans of the British Petroleum Oil Company for a new hydrogen power plant that includes an offshore platform in the North Sea.