Science.gov (United States)

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

Science.gov (United States)

... TANK GUNS, GUNS, CHAMBERS, IGNITERS, INTERIOR BALLISTICS, INTERNAL PRESSURE, COMBUSTIBLE CARTRIDGE CASES, METALS. ...

Science.gov (United States)

... UNLIMITED Page 7. I! PHYSICOCHEMICAL ASPECTS OF GUN BARREL EROSION AND ITS CONTROL Iqbal Ahmad Benet ...

Energy Technology Data Exchange (ETDEWEB)

Bremstrahlung Isochromat Spectroscopy (BIS). The XES spectra were collected using a Specs electron gun for the excitation and the XES 350 grating monochromator and channel plate system from Scienta as the photon detection. Spectra were collected in 'normal mode,' where the electron gun kinetic energy (KE) and the energy position of the center of the channel plate were both fixed and the energy distribution in the photon (hv) spectrum was derived from the intensities distributed across the channel plate detector in the energy dispersal direction. The polycrystalline Ce sample was oxidized by exposure to air at ambient pressures. After introduction to the ultra-high vacuum system, the oxidized sample was bombarded with Ar, to clean the topmost surface region and stabilize the surface and near surface regions. Although CeO{sub 2} would be the thermodynamically preferred composition in an oxygen rich environment, the combination ...

Science.gov (United States)

A 12-month program was conducted to advance the technology of the Electrical Discharge Machining (EDM) process to be applicable to the stringent requirements of gun barrel boring and rifling. The type of barrels employed in the test were .220 swift gun ba...

Science.gov (United States)

15 to 75% of the gun barrel diameter. Similarly, model masses typically vary from 0.01 to 100 .... taining acceptable levels of gun barrel erosion. The ...

UK PubMed Central (United Kingdom)

Background: The nail gun is a commonly utilized tool in carpentry and construction. When used properly with appropriate safety precautions, it can facilitate production and boost efficiency;...Full Text Available

Science.gov (United States)

Turbine Afterword The SHARP cannon. Hydrogen is compressed in the tube on top, the gun barrel is on bottom. When Jules Verne wrote in 1865 "From Earth to the Moon" he envisioned...

Science.gov (United States)

... Accession Number : ADB006226. Title : Electrical Discharge Machining (EDM) Gun Barrel Bore and Rifling Feasibility Study. ...

Science.gov (United States)

... Title : STRESS ANALYSIS OF AN AUTOFRETTAGED LOOSE LINER FOR GUN BARREL CONSTRUCTION PRECOMPRESSED IN THE ...

KoreaScience (Korea)

Full Text Available

Science.gov (United States)

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Science.gov (United States)

A device for reducing the muzzle blast and flash from large caliber guns is disclosed. A container having a plurality of internal chambers and baffle plates filled with an aqueous foam is mounted to the muzzle of the gun barrel. The foam and chambers co-o...

Science.gov (United States)

... used their Phoenics code to simulate the effect of additives, such as talcum powder which was impregnated in combustible cartridge cases, on the ...

Science.gov (United States)

sabot: A device fitted around or in back of a projectile in a gun barrel or launching tube to support or protect the projectile or to prevent the escape of ...

Energy Technology Data Exchange (ETDEWEB)

The ultraviolet photoelectron spectra of benzoic acid and 20 of its derivatives are presented. The low-energy regions of these spectra are deconvoluted and assigned using chemical substitution effects. 5 figures, 3 tables.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The addition of a thermionic rf gun [1] and a photocathode rf gun will allow the Advanced Photon Source (APS) linear accelerator (linac) [2] [3] to become a free-electron laser (FEL) driver [4]. As the FEL project progresses, the existing high-charge DC thermionic gun will no longer be critical to APS operation and could be used to generate high-energy or low-energy electrons to drive a slow-positron source. We investigated possibilities to create a useful low-energy source that could operate semi-independently and would have a low neutron background.

Index Scriptorium Estoniae

Uutest heliplaatidest Cry For Silence "The Glorious Dead", ETHS "Teratologie", Gun Barrel "Outlaw Invasion", King's X "XV"

Energy Technology Data Exchange (ETDEWEB)

It is shown that a gun similar to that in the SSPX could demonstrate the high fields required for Pulsed Spheromak reactors merely by prolonging the pulse. Important considerations are choosing the voltage to exceed ohmic losses; designing the gun to avoid wasteful short-circuiting of current within the gun; and the injection efficiency factor, f, determined by the ''sag'' in the profile of {lambda} = {mu}{sub o}j/B. Typically f = 0.75 in experiments, giving an overall efficiency > 50 % if short-circuiting is avoided. Theoretical transport models agree qualitatively with the need for a finite gradient in h to pump in helicity by current-driven tearing modes and suggest that pressure-driven resistive modes would not compete with current-driven modes during a buildup to ohmic ignition.

Science.gov (United States)

2 illustrates the design of the launch tube, the gun barrel design of the multi-tube dispenser and integrated hardware pressure cannister. ...

Science.gov (United States)

... 28, No. 12B, December 1986, pp. 1931-1942. Dattner, A. and Eninger, J., "Studies of a Coaxial Plasma Gun," The Physics of Fluids, Vol. 7, No. ...

Science.gov (United States)

... with dynamic gridding capability to account for material ablation, as well as the addition of energy sources and heat transfer augmentation due to ...

Science.gov (United States)

An original method is proposed for ensuring time-invariant (stationary) interior ballistic parameters in the postprojectile space of a gun barrel. Stationarity of the parameters is achieved by investing the solid-propellant charge with highly original structures that produce the required pressure condition and linear growth of the projectile velocity. Simple relations are obtained for calculating the principal characteristics.

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...

Energy Technology Data Exchange (ETDEWEB)

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

Energy Technology Data Exchange (ETDEWEB)

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

Energy Technology Data Exchange (ETDEWEB)

The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

Energy Technology Data Exchange (ETDEWEB)

The authors report experimental results on a high gradient 17 GHz RF photocathode gun. The photocathode RF gun is a novel electron beam source intended to meet the requirements set by future high-energy linear colliders and next generation free electron lasers. A coupled pair of pillbox TM{sub 010}-like resonators is excited by sidewall coupled microwaves at 17 GHz. A picosecond ultraviolet laser pulse illuminates one wall of the structure at the axis of symmetry. Electrons are released by the photoelectric effect and are accelerated by the electric field of the microwaves in the cavity. The high frequency of operation raises the RF breakdown limit allowing strong electric fields to be used. In turn, the intense fields result in rapid acceleration of the electrons to relativistic speeds and reduced space charge induced emittance growth.

Energy Technology Data Exchange (ETDEWEB)

The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.

Energy Technology Data Exchange (ETDEWEB)

During the present grant period we have continued our study of the photodetachment of atomic negative ions using cross-beam photoelectron detachment spectroscopy. The experimental technique involves the measurement of, under conditions of good energy and angular resolution, kinetic energies, yields and angular distributions of photoelectrons ejected from the interaction region between perpendicularly crossed laser and negative ion beams. 6 figs.

Energy Technology Data Exchange (ETDEWEB)

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE ...

Science.gov (United States)

An investigation was conducted to determine the cause of coating residue found in the test gun chambers during qualification firing of 120-mm combustible cartridge case (CCC) ammunition for the MlAl/A2 main battle tank. The CCC is coated with a clear epox...

Science.gov (United States)

Page 1. Page 2. Page 3. Page 4. Page 5. Page 6. Page 7. Page 8. Page 9. Page 10. Page 11. Page 12. Page 13. Page 14. Page 15. Page 16. Page ...

Science.gov (United States)

Page 1. Page 2. Page 3. Page 4. Page 5. Page 6. Page 7. Page 8. Page 9. Page 10. Page 11. Page 12. Page 13. Page 14. Page 15. Page 16. Page ...

International Nuclear Information System (INIS)

To evaluate the effect of plugging the biopsy tract in rabbit liver and the pathologic changes caused by plugging materials. Thirty-two New Zealand White rabbits were divided into four groups (eight rabbits in each) and compared with one another. They were labeled group A (control), B (gelfoam), C (fibrin sealant) or D (NBCA). the liver was exposed and biopsied with an 18G disposable biopsy gun. The inner Tru-cut needle was withdrawn and plugging was undertaken through the outer cannula of the biopsy gun. Bleeding times of each material were compared. The rabbits were sacrificed and pathologically evaluated for 17 days.

Science.gov (United States)

A computer model of an electrothermal accelerator has been developed which applies to the plasma generator as well as the gun barrel, and it for the first time allows study of the interdependent physical processes in both components simultaneously. The code comprises a 2D transient description of the plasma arc, a 2D, two-phase interior ballistics module, and a preprocessor delivering the required plasma physical data. Some results on the flow field, pressure and temperature in a typical accelerator are presented, and probable limitations on the performance of such a system are discussed. The code is to be applied to different concepts of electrothermal chemical guns.

International Nuclear Information System (INIS)

A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

Science.gov (United States)

Photoelectron resonance capture ionization (PERCI) is a soft and sensitive ionization method, based on the attachment of low-energy (<1 eV) photoelectrons to organic analyte molecules. PERCI has been developed in our laboratory for the real-time analysis of organic particles by mass spectrometry, and is employed here to monitor the heterogeneous reaction of ozone with oleic acid. Simplified identification of the reaction products is possible as a result of the soft nature of PERCI, giving predominantly the [M--H](-) ions. The major particle-phase products are identified as: 1-nonanal, nonanoic acid, 9-oxononanoic acid, and azelaic acid, consistent with proposed mechanisms. New insight into this well-studied heterogeneous reaction is gained as additional minor particle-phase products, consistent with the Criegee mechanism, are readily detected. PMID:15468105

Energy Technology Data Exchange (ETDEWEB)

GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup 2}-area GaAs cell on ...

Science.gov (United States)

Direct coupljng between Al and Au metal]jzations can result in an increase in gate resistance due to a metallurgical reaction. (purple plague). An RF life test on ...

Energy Technology Data Exchange (ETDEWEB)

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. A proposed structure for the GaInAsP/Ge cascade cell is also given.

Energy Technology Data Exchange (ETDEWEB)

In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

International Nuclear Information System (INIS)

A calculation method of the X-ray radiation dose (energy of gamma- radiation remains in the range of energies where the mechanism of photoelectric absorption is the prevailing one) absorbed in the absorbers of final thickness is suggested. Calculations of resorption of secondary radiation (characteristic fluorescences) in the substance and kinetic energy of photoelectrons caused by this resorption (it would be enough to consider one or two hard series) are presented. Calculation of the spectrum of photoelectron energy yield in TeInSe_2 monocrystal for 0.1-0.5 A range of X-ray radiation is conducted by the developed methods.

Energy Technology Data Exchange (ETDEWEB)

A Numerical study of beam dynamics was performed for two injector systems for the proposed National High Magnetic Field Laboratory at the Florida State University (FSU) Free Electron Laser (FEL) facility. The first considered a system consisting of a thermionic DC gun, two buncher cavities operated at 260 MHz and 1.3 GHz and two TESLA type cavities, and is very similar to the injector of the ELBE Radiation Source. The second system we studied uses a DC photogun (a copy of JLab FEL electron gun), one buncher cavity operated at 1.3 GHz and two TESLA type cavities. The study is based on PARMELA simulations and takes into account operational experience of both the JLab FEL and the Radiation Source ELBE. The simulations predict the second system will have a much smaller longitudinal emittance. For this reason the DC photo gun based injector is preferred for the proposed FSU FEL facility.

Energy Technology Data Exchange (ETDEWEB)

The physics and technological issues involved in high gradient particle acceleration at high microwave (RF) frequencies are under study at MIT. The 17 GHz photocathode RF gun has a 1 1/2 cell ({pi} mode) room temperature cooper cavity. High power tests have been conducted at 5-10 MW levels with 100 ns pulses. A maximum surface electric field of 250 MV/m was achieved. This corresponds to an average on-axis gradient of 150 MeV/m. The gradient was also verified by a preliminary electron beam energy measurement. Even high gradients are expected in our next cavity design.

International Nuclear Information System (INIS)

To suit the needs of development for manufacture VLSI, we started to investigate liquid metal ion sources (LMIS) and focused ion beam (FIB) in 1984. Many kinds of emitters viz. neddle type, co-axial type and capillary type of Ga and Au LMIS and three kinds of eutectic alloys LMIS (Au-Si, Au-Si-Be, Pd-Ni-Si-Be-B) have been tested. A program which can calculate focused ion guns has been written. Four kinds of foused ion guns have been operated, a fine beam with diametic 0.1 #mu#m is obtained. Using the FIB a scanning ion microscope has been constructed. Some tests of etching and self-developing of nitrocellulose are described. (author).

International Nuclear Information System (INIS)

Carbon fibre composite (CFC) was irradiated by hot plasma streams at plasma gun facility MK-200UG. The CFC targets were tested by plasma loads relevant to Edge Localized Modes (ELM) and mitigated disruptions in ITER. Onset condition of CFC evaporation and properties of evaporated carbon were studied by use of infrared pyrometry and visible spectroscopy.

Science.gov (United States)

> Develoopments which have imporved fuel core quality and reduced production costs are described. These developments in the melting and casting of uranium ingots arei modification of the crucible and knockout-slide assembly, substitution of uncoated crucibles for coated crucibles, and substitution of a one-piece gun barrel mold for a vertically split mold. (N.W.R.)

Science.gov (United States)

The accelerating flow of a lighter continuous phase through a heavier one is considered. Small nonuniformities grow into large ones due to the Rayleigh-Taylor instability. An experiment exemplifying the large bubble formation due to Rayleigh-Taylor instability was performed and simulated using the PHOENICS 84 computer code. The same numerical procedure was applied to the two-phase flow in a gun barrel. It shows that the acceleration provided by the movement of the projectile can cause initial nonuniformities to grow with time.

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a ...

Energy Technology Data Exchange (ETDEWEB)

An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for terrestrial as well as for space ...

CERN Document Server

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of approx 1nA and a ...

Energy Technology Data Exchange (ETDEWEB)

In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.

International Nuclear Information System (INIS)

Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected.

Energy Technology Data Exchange (ETDEWEB)

Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.

International Nuclear Information System (INIS)

Deep level effects in GaAs MOSFET have been characterised in the ohmic channel using DLTS, low frequency excess noise and dispersion technique. An isothermal multi exponential curve fitting method has been devised and implanted into the DLTS system. Multi exponential curve fitting method used to decompose a multi exponential transient into its constituents so that the peak signature can be better characterised for the case whereas several peaks are closely spaced. Low frequency excess noise and dispersion techniques also confirm the trap in signature of the same traps observed in the DLTS measurements. (author)

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

British Library Electronic Table of Contents (United Kingdom)

High molecular weight products of the ozonolysis reaction of particle-phase 9-octadecenoic acid (oleic acid) have been studied by photoelectron resonance capture ionization (PERCI) mass spectrometry (MS). Oleic acid particles ( Formula Not Shown , Formula Not Shown ) were reacted with ozone (1.8x10-4atm) in a flow reactor at reaction times of 8 and 23s. Particles were sampled on-line with a differentially pumped particle inlet and chemically analyzed by PERCI-MS. PERCI is a soft ionization method that permits the direct measurement of relatively high molecular weight compounds, facilitating molecular identification. In addition to cyclic oxygenates, such as secondary ozonides and geminal diperoxides that were reported previously, we demonstrate the formation of polymers at the particle sur...

International Nuclear Information System (INIS)

Composite nitrides (such as BN, TiN) are widely used in various industrial applications because of their extreme wear and corrosion resistance, thermal and electrical properties. in order to obtain composite materials with these optimal properties, it is important to elucidate whether any chemical reactions occur at nitride/metal interfaces, e.g., those involving BN-Ti/TiN. Materials of interest include the deposition by PVD of Ti and TiN on BN substrates. Some of these systems were then subjected to varying degrees of physical and thermal alteration. Detailed X-ray photoelectron spectroscopy (XPS) has therefore been rendered of these interfaces using cross-sectional display and sputter etching. Resulting structural and morphological features have been investigated with transmission electron microscopy (TEM) and X-ray diffraction (XRD). Diffusion of the nitridation, oxynitride formation and interfacial growth are of general interest.

Energy Technology Data Exchange (ETDEWEB)

The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination ...

UK PubMed Central (United Kingdom)

An unusual S1-nuclease sensitive microsatellite (STMS) has been found in the single copy, rat polymeric immunoglobulin receptor gene (PIGR) terminal exon. In Fisher rats, elements within or beyond the...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A synergistic effect exists when benzotriazole (BTAH) and iodide ions are used together to prevent the corrosion of copper in sulfuric acid. The nature of this effect has been studied systematically by using electrochemical techniques and X-ray photoelectron spectroscopy. The synergistic effect is due largely to the formation of a film of Cu(IBTA) complex and is probably polymeric in nature. This new complex film greatly depresses copper dissolution.

International Nuclear Information System (INIS)

Several metallurgical coatings have been developed that provide good tribological performances in high-temperature liquid sodium and that are relatively unaffected by neutron fluences to 6 X 10/sup 22/ n/cm/sup 2/ (E > 0.1 MeV). The coatings that have consistently provided the best tribological performance have been the nickel aluminide diffusion coatings created by the pack cementation process, chromium carbide or Tribaloy 700 trade mark (a nickel-base hardfacing alloy) applied by the detonation-gun process, and chromium carbide and other hardfacing alloy) applied by the detonation-gun process, and chromium carbide and other hardfacing materials applied by the electro-spark deposition process. The latter process is a relatively recent development for nuclear applications and is expected to find wide usage. Other coating processes, such as plasma-spray coating, sputtering, and chemical vapor deposition, were candidates for use on various ...

Energy Technology Data Exchange (ETDEWEB)

Production of intense negative ion beams in magnetically insulated diodes was studied in order to develop an understanding of this process by measuring the ion-beam parameters as a function of diode and cathode plasma conditions in different magnetically insulated diodes. A coral diode, a racetrack diode, and an annular diode were used. The UCI APEX pulse line, with a nominal output of 1MV, 140kA, was used under matched conditions with a pulse length of 50 nsec. Negative-ion intensity and divergence were measured with Faraday cups and CR-39 track detectors. Cathode plasma was produced by passive dielectric cathodes and later, by an independent plasma gun. Negative-ion currents had an intensity of a few A/cm{sup 2} with a divergence ranging between a few tenths milliradians for an active TiH{sub 2} plasma gun and 300 milliradians for a passive polyethelene cathode. Negative ions were usually emitted from a few hot spots on the cathode surface. ...

International Nuclear Information System (INIS)

The UTST (University of Tokyo Spherical Tokamak) device was constructed for the purpose of exploring the formation of ultra-high beta ST (Spherical Tokamak) plasma using the double null plasma merging method. When two plasmas merge together to form a single plasma, magnetic field lines reconnect, and the magnetic field energy is converted to the plasma kinetic energy, increasing the plasma beta. The merging start-up has been demonstrated in the TS-3/4, START and MAST devices using coils inside the vacuum vessel and TS-3 plasma obtained 50% beta. In order to demonstrate the start-up in a more reactor relevant situation, UTST has all poloidal field coils outside the vacuum vessel. The first plasma experiment on the UTST was performed from December, 2007. In the result, the plasma obtained 10 kA by using only outer PF coils and single ST was generated at the lower area (z=-0.3 - -1.0[m]) close to a washer gun. This result suggests that another washer ...

Science.gov (United States)

A troubling reality in today's political climate is that many political leaders actually believe that the best way to change schools is through an "end of a gun barrel" approach, rather than by building consensus. In this article, the author examines the reality of high-stakes testing from several perspectives, including the politics of coercion, politics of performance, and the politics of perception. The author discusses that high-stakes testing is a politically charged issue that has had a tremendous impact on the way schools operate; however, teachers must not be afraid to keep their perspective and must encourage a healthy, honest dialogue about the role of testing and engage in political debate.

International Nuclear Information System (INIS)

We have constructed an apparatus to study electron impact ionization of ions which should provide additional insight into the mechanisms involved. Using multiparameter coincidence techniques, we will detect both outgoing electrons from ionization process and will be able to analyze the momenta of both particles simultaneously. Coupled with a high resolution electron gun, this information should have broad application to the difficult problem of three bodies interacting via the long range Coulomb force. If sufficient accuracy can be achieved, information regarding the relative phase of the outgoing electron wavefunctions can be obtained.

International Nuclear Information System (INIS)

The feasibility of a high-energy electron cooling device has been studied through tests on a prototype of the electron device. The apparatus consists of a pulsed ((20-60) keV, 2#mu#s) electron gun, a drift region 1 m long and of a depressed collector for recovering the electron energy. Tests on beam optics and energy recovery have been performed, a high-energy recovery efficiency has been attained. Experimental results are discussed in this paper.

International Nuclear Information System (INIS)

To achieve high efficiency for the conversion of electron kinetic energy in an electron beam to electromagnetic energy in a Free Electron Laser (FEL), it is important to improve the beam quality. And hence, it is necessary to study and minimize the emittance growth of the beam. According to the requirements for the beam quality in an FEL, the author analyzed the emittance growth caused by the jump of the electric field in an accelerator, energy increase, wakefield in a waveguide, space charge effect and distribution of particles in a beam as well as the wakefield in a deflect system etc. The author also estimated the emittance change caused by the variation of the microwave field from the gun to the first accelerator for such case.

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack ...

International Nuclear Information System (INIS)

Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 A within 3000 A wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier-carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in InGaAs but may be due to stimulated emission in InGaAsN. The results reveal that the carrier dynamics is ...

International Nuclear Information System (INIS)

We have investigated the characteristics of ion-beam-induced spontaneous etching (IBISE) of GaAs in Cl_2 ambient by using a Ga-focused ion beam (FIB) with an energy ranging from 3 to 15 keV. The etched depth of the irradiated region was more than 20 times greater than that of unirradiated region. When the sputtered depth by FIB irradiation amounted to around 8 A at each ion energy, the etched depth in Cl_2 ambient for 1 hour became saturated. The saturated etched depths were 450, 550, 750 and 800 A at the ion energy of 3, 5, 10 and 15 keV, respectively. The residual damage of the etched surface was also investigated by photoluminescence (PL) measurement. The maximal PL intensity was obtained at around the threshold dose of IBISE and increased with decreasing ion energy. The full recovery of PL intensity was observed at the ion energy of 3 keV after annealing at 400degC. (author).

Energy Technology Data Exchange (ETDEWEB)

Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

Energy Technology Data Exchange (ETDEWEB)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K{sub {alpha}} X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K{sub {alpha}} X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the conditions necessary ...

Energy Technology Data Exchange (ETDEWEB)

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

International Nuclear Information System (INIS)

Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that by N2 plasma.

Energy Technology Data Exchange (ETDEWEB)

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs reactions studied are ...

International Nuclear Information System (INIS)

Iron oxide thin films were prepared by spray pyrolysis technique onto glass substrates from iron chloride solution. They were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and (UV-vis) spectroscopy. The films deposited at T _s #<=# 450 deg. C were amorphous; while those produced at T _s_u_b = 500 deg. C were polycrystalline #alpha#-Fe_2O_3 with a preferential orientation along the (1 0 4) direction. By observing scanning electron microscopy (SEM), it was seen that iron oxide films were relatively homogeneous uniform and had a good adherence to the glass substrates. The grain size was found (by RX) between 19 and 25 nm. The composition of these films was examined by X-ray photoelectron spectroscopy and electron probe microanalysis (EPMA). These films exhibited also a transmittance value about 80% in the visible and infrared range. The cyclic voltammetry study showed ...

Energy Technology Data Exchange (ETDEWEB)

Research highlights: {yields} The polarization curve of 316L SS possesses five turning potentials in passive region. {yields} Films formed at turning potentials perform different electrochemical and semiconductor properties. {yields} Dissolutions and regenerations of passive film at turning potentials are obtained by AAS and XPS. {yields} Turning potentials appearing in passive region are ascribed to the changes of the compositions of the passive films. - Abstract: The passivity of 316L stainless steel in borate buffer solution has been investigated by Mott-Schottky, atomic absorption spectrometry (AAS) and X-ray photoelectron spectroscopy (XPS). The results indicate that the polarization curve in the passive region possesses several turning potentials (0 V{sub SCE}, 0.2 V{sub SCE}, 0.4 V{sub SCE}, 0.6 V{sub SCE} and 0.85 V{sub SCE}). The passive films formed at turning potentials perform different electrochemical and semiconductor properties. Further, the ...

International Nuclear Information System (INIS)

The details and principles of an apparatus built for measurements of fluorescence quantum yields and cascade-free lifetimes of open-shell cations are reported. These rely on the detection of coincidences between energy selected photo-electrons and undispersed photons. The results of such measurements for CO"+_2,COS"+,CS"+_2 and N_2O"+ in selected vibrational levels of their excited states are presented. Non-unity fluorescence quantum yields are found for some vibronic levels of CO"+_2(B), COS"+(A), N_2O"+(A) and a non-exponential decay is observed for CS"+_2(B). The data yield the following values for the radiative lifetimes: CO"+_2(A) 124 +- 6 ns,CO"+_2(B) 140 +- 7 ns, COS"+(A) 550 +- 50 ns and N_2O"+(A) 240 +- 12 ns. (orig.).

Energy Technology Data Exchange (ETDEWEB)

A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.

International Nuclear Information System (INIS)

The use of workstations, controllers or embedded systems and their applications have become much more relevant than previously. PC-based systems, a cooker programmer, applications of, for example, Prolog machines, Unix and Ada papers, Robotics and Automation are typical examples of this. The three keynote addresses of this symposium have as their subjects the most spectacular microcomputer fields and are presented by leading experts. The papers presented cover most of the traditional interests of Euromicro. Special emphasis is given to contributions on the use of workstations and personal computers, on RISC and GaAs and on transputers.

British Library Electronic Table of Contents (United Kingdom)

Multiwall carbon nanotubes (MWCNTs) were functionalized with a photosensitizer, rosebengal (RB), and folicacid (FA), an anti-cancer drug simultaneously and individually, which was characterized with various analytical instruments like Fourier Transform Iinfrared (FTIR) spectroscopy, UV?Vis spectroscopy, Thermogravimetric analysis (TGA), Photoluminescence (PL) spectroscopy, X-ray photoelectron spectroscopy (XPS), and Transmission electron microscopy (TEM). FTIR spectra confirmed the chemical modification of MWCNT. The chemical functionalization of MWCNT with RB was further supported by UV?Vis and PL spectra.

International Nuclear Information System (INIS)

Evolution of the passive films formed on AISI 304L and duplex stainless steel SAF 2205 in NaOH 0.1 M was investigated using cyclic voltammetry, electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS). Special attention is paid to the effect of Mo in the generation of the films. Results point out to the stabilising effect of the molybdates on the surface of the film, enhancing the formation of a thin layer on the SAF 2205 with a higher Cr/Fe ratio.

Energy Technology Data Exchange (ETDEWEB)

We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and after post-growth thermal annealing. In ...

International Nuclear Information System (INIS)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit current densities are due to short diffusion lengths, we have demonstrated a ...

Energy Technology Data Exchange (ETDEWEB)

This award provided for an automated computer-controlled goniometer/diffractometer/manipulator with hot and cold stages and data acquisition system that was interfaced with the high resolution Scienta ESCA-300 X-ray photoelectron spectrometer at Lehigh University. The automation allows angular dependent X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) data to be accurately and rapidly collected without the very time-consuming and labor-intensive manual method that was previously required. It also provides for automated multi-sample analyses, collecting both wide survey scans and selected binding energy range analyses, with complete computer control and data storage. This allows 24 hour data collection without requiring the continuous presence of operators. The overall result is a greater productivity for the XPS laboratory, approximately doubling the output of the laboratory. While the ...

International Nuclear Information System (INIS)

Among the investigations conducted on the space shuttle flight STS 3 March 1982 was an experiment in which a 1-keV, 100-mA electron gun was pulsed at 3.25 and 4.87 kHz. The resultant waves were measured with a broadband plasma wave receiver. At the time of flight the experimental setup was unique in that the electron beam was square wave modulated and that the shuttle offered relatively long times for in situ measurements of the ionospheric plasma response to the VLF pulsing sequences. In addition to electromagnetic response at the pulsing frequencies the waves exhibited various spectral harmonics as well as the unexpected occurrence of satellite lines around those harmonics. Both phenomena occurred with a variety of different characteristics for different pulsing sequences.

Energy Technology Data Exchange (ETDEWEB)

In an earlier publication we considered acceleration of plasma rings (Compact Torus). Several possible accelerator configurations were suggested and the possibility of focusing the accelerated rings was discussed. In this paper we consider one scheme, acceleration of a ring between coaxial electrodes by a B/sub theta/ field as in a coaxial rail-gun. If the electrodes are conical, a ring accelerated towards the apex of the cone undergoes self-similar compression (focusing) during acceleration. Because the allowable acceleration force, F/sub a/ = kappaU/sub m//R where (kappa < 1), increases as R/sup -2/, the accelerating distance for conical electrodes is considerably shortened over that required for coaxial electrodes. In either case, however, since the accelerating flux can expand as the ring moves, most of the accelerating field energy can be converted into kinetic energy of the ring leading to high efficiency.

Energy Technology Data Exchange (ETDEWEB)

A new test methodology is described which allows access to loading rates that lie between split Hopkinson bar and shock-loading techniques. Gas gun experiments combined with velocity interferometry techniques have been used to experimentally determine the intermediate strain-rate loading behavior of Coors AD995 alumina and Cercom silicon-carbide rods. Graded-density materials have been used as impactors; thereby eliminating the tension states generated by the radial stress components during the loading phase. Results of these experiments demonstrate that the time-dependent stress pulse generated during impact allows an efficient transition from the initial uniaxial strain loading to a uniaxial stress state as the stress pulse propagates through the rod. This allows access to intermediate loading rates over 5 x 10{sup 3}/s to a few times 10{sup 4}/s.

Energy Technology Data Exchange (ETDEWEB)

The nucleation of microdamage under dynamic loading was investigated through planar impact experiments accomplished with a light gas gun. The microscopic observation of recovered and sectioned specimens showed that microcracks were nucleated only by cracking of brittle particles inside material. However, for comparison the in situ static tensile tests on the same material conducted with a scanning electron microscope showed that the microcracks were nucleated by many forms those were fracture of ductile matrix, debonding particles from matrix and cracking of brittle particles. The quantitative metallographic observations of the specimens subjected to impact loading showed that most of the cracked particles were situated on grain boundaries of the aluminum matrix. These facts suggested the concept of critical size and incubation time of submicroscopic cavities in the dynamic case and the mechanism of embryo-damage induced nucleation by fracture of brittle particles ...

Energy Technology Data Exchange (ETDEWEB)

The construction and the development of a UV free electron laser have been started under the cooperation of Nihon U, KEK, PNC, ETL and Tohaku U. The project requires a 100MeV S-band electron linear accelerator to expand the oscillation of FEL using fundamental mode to the UV region. The injection system consists of a thermionic RF-gun with a LaB cathode and an {alpha} magnet for magnetic bunching. We are studying to reduce the back-bombardment electrons to realize the macropulse length of 20{mu}sec. Electron beams, up to the energy of 100MeV, are injected into the optical oscillators. Changing the accelerating energy and/or undulator parameters, this system will cover the range from infrared to ultraviolet for the applications in various fields.

International Nuclear Information System (INIS)

For obtaining radiation less damagable laser mirrors, a preliminary optimization of film fabrication suitable for the analysis of laser damage mechanism has been done as the first step. Here, the optimization requires not only the stable fabrication process but also the ideal film structure i.e., the amorphous and smooth film structure simultaneously, eliminating latently unwanted secondary effects such as light scattering during laser damage test. For this purpose, we adopted the ion assisted deposition (IAD) method and modified the deposition conditions for titanium and tantalum oxide films, both of which compose typical high index layers, and where SiO_2 layers are also chosen as low index layers because of their amorphous and smooth nature, in alternative multilayer laser mirrors. Surface and cross sectional film structures and film crystallinity are compared and characterized, using a high resolution SEM and a x-ray diffractometer, respectively. The fabrication process and the ...

Energy Technology Data Exchange (ETDEWEB)

We report measurements of the temperature dependence of the threshold current of GaAs, 1.3-..mu..m InGaAsP, and 1.5-..mu..m InGaAsP double heterostructure lasers using short electrical pulses. T/sub 0/approx.200 K is observed for all the lasers. These high T/sub 0/ values show that the carrier density at threshold does not increase rapidly with increasing temperature in any of the lasers studied and thus the observed low cw T/sub 0/ of InGaAsP lasers is primarily due to a decrease of the carrier lifetime at threshold with increasing temperature.

Energy Technology Data Exchange (ETDEWEB)

Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

International Nuclear Information System (INIS)

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

Energy Technology Data Exchange (ETDEWEB)

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

International Nuclear Information System (INIS)

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

Energy Technology Data Exchange (ETDEWEB)

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The present paper is a comparative study of the cerium-containing nickel catalysts supported on x- and y-zeolites. In general, the addition of cerium ions caused an increase in the catalytic activity for CO hydrogenation and shifted the product selectivity to high molecular weight hydrocarbons. The degree of the effect of cerium additive depends on the ratio of cerium to nickel contents, the reduction temperature, and the nature of the supporting materials. Catalyst characterization, including volumetric hydrogen chemisorption, temperature programmed reduction/desorption, x-ray diffraction, surface area measurements, in-situ infrared spectroscopy and x-ray photoelectron spectroscopy, was performed in order to interpret the phenomena due to the effects of cerium additives and the support effect on Ni/zeolite catalysts.

International Nuclear Information System (INIS)

The future use of single-molecule magnets in applications will require the ability to control and manipulate the spin state and magnetization of the magnets by external means. There are different approaches to this control, one being the modification of the magnets by adsorption of small ligand molecules. In this paper we use iron phthalocyanine supported by an Au(111) surface as a model compound and demonstrate, using x-ray photoelectron spectroscopy and density functional theory, that the spin state of the molecule can be tuned to different values (S #approx# 0, 1/2, 1) by adsorption of ammonia, pyridine, carbon monoxide or nitric oxide on the iron ion. The interaction also leads to electronic decoupling of the iron phthalocyanine from the Au(111) support. (fast track communication)

International Nuclear Information System (INIS)

Research highlights: ? Reports a high protection system for the alloy in corrosive environment. ? Describes an interfacial process with self-healing properties. ? Reports the influence of substrate pre-treatment in the coating performance. - Abstract: In this paper the interface of poly(vinylidene fluoride) coatings prepared by the dip coating method and HF-treated AZ31 magnesium alloy was evaluated. The best performance of this system in corrosion tests compared to ground, as-received and acetic acid cleaned substrates is related to an acid-base interaction at the interface and to interfacial reactions which resulted in a self-healing process. The protectiveness of the samples was investigated using impedance and immersion tests while the coating morphology and interface stability were investigated by scanning electron microscopy, X-ray photoelectron spectroscopy and adhesion tests.

International Nuclear Information System (INIS)

Energy-filtered X-ray photoemission electron microscopy (EXPEEM) is a microscopy technique which has the potential to provide surface chemical mapping during surface chemical processes on the nanometer scale. We studied the possibilities of EXPEEM using a Wien filter type energy analyzer in the high energy X-ray region above 1000 eV. We have successfully observed the EXPEEM images of Au islands on a Ta sheet using Au 3d_5_/_2 and Ta 3d_5_/_2 photoelectron peaks which were excited by 2380 eV X-rays emitted from an undulator (BL2A) at Photon Factory. Our recent efforts to improve the sensitivity of the Wien filter energy analyzer will also be discussed.

International Nuclear Information System (INIS)

A kind of polymer-metal complex gel electrolyte is successfully prepared and is used in dye-sensitized solar cells. Raman and X-ray photoelectron spectroscopy confirm the structure of this complex and is found that the metal ion reacts with nitrogen in the polymer. This novel electrolyte shows apparent diffusion coefficient of iodide of 8.37 x 10-7 cm2 s-1 and the energy conversion efficiency of 6.10% when the amount of ZnI2 is 0.04 M. By studying the dissociation active energy of the inorganic salt in electrolytes, we find that the metal salts can dissociate more easily after reacting with polymer and as a result can provide extra free iodide ion. The cell maintains ca. 93% of its initial efficiency after 20 d without further sealing, which shows good long-time stability.

Energy Technology Data Exchange (ETDEWEB)

X-Ray reflectivity has been used to investigate the microstructural changes of solution-cast stearic acid films before and after immersion in CoCl{sub 2} solutions. Before immersion, the films possess a well-defined layered structure with an interlayer spacing of 4.01{+-}0.05 nm. After the films were immersed in the CoCl{sub 2} solutions, a new set of equidistant diffraction peaks emerge, the corresponding interlayer spacing of which is 5.13{+-}0.05 nm. The X-ray photoelectron spectra of the films indicate the existence of cobalt ions inside the films after immersion. It is concluded that the permeation of the cobalt ions into the hydrophilic interlayer causes the stearic acid molecules to reorient perpendicular to the films, resulting in the increase of interlayer spacing and the roughening of the interfaces.

Energy Technology Data Exchange (ETDEWEB)

X-ray photoelectron spectroscopy measurements indicate that the Ce{sup 3+} like fraction in {gamma}-Al{sub 2}O{sub 3} supported CeO{sub 2} can be decreased by the incorporation of La{sup 3+}. If La{sup 3+} is incorporated into the {gamma}-Al{sub 2}O{sub 3} before CeO{sub 2} is added, a higher CeO{sub 2} dispersion and a greater range of reversible reducibility of the CeO{sub 2} may also be obtained. These changes offer potential for improvement in the oxygen storage capacity provided by CeO{sub 2} in three-way catalysts. The actual effect of La{sup 3+} incorporation on the activity and durability of a Pt catalyst is assessed by a combination of temperature programmed reduction and flow reactor measurements.

British Library Electronic Table of Contents (United Kingdom)

Peptide sequences such as lysine-arginine-serine-arginine (KRSR) selectively bind transmembrane proteoglycans (e.g. heparin sulfate) of osteoblasts (bone-forming cells) and are, therefore, actively being investigated for orthopedic applications. Further, nanophase materials (or materials with grain or particle sizes less than 100 nm) are promising new materials that promote new bone growth more than compared to conventional (that is, micron grain or particle size) materials. To combine the above two promising approaches for improving orthopedic implants, the objective of this in vitro study was to functionalize titanium (Ti) surfaces (both nanophase and conventional) with KRSR peptides and study their osteoblast cell adhesive properties. Materials were characterized by X-ray photoelectron ...

Energy Technology Data Exchange (ETDEWEB)

Organic/metal interface properties are of high interest for the application of molecular (sub)monolayers to modify surface properties. They are applied for, e.g., molecular electronics, chemical sensing, or the tuning of injection barriers in organic electronic devices. We present a joint theoretical and experimental study of F{sub 4}TCNQ adsorbed on Cu(111). The electronic and structural properties were determined by ultraviolet photoelectron spectroscopy (UPS) and X-ray standing wave (XSW) measurements. To better understand the complex process of binding, we modelled the system using density-functional theory. We find forward-donation from the lone pairs of the molecule into metallic states and back-donation from the metal into the LUMO of the molecule. The data on Cu(111) are compared to F4TCNQ on Au(111) and Ag(111) as well as to investigations of pyrenetetraone on various coinage metals.

International Nuclear Information System (INIS)

Passive films formed on Alloy 690 in high-temperature alkaline environments were investigated by potentiodynamic polarization, X-ray photoelectron spectroscopy, transmission electron microscopy and Mott-Schottky approach. Passive current density and donor density of the passive films increase with increasing temperature, due to increased diffusion rates of metallic ions and dehydration of hydroxide phases. The passive films show a duplex structure including an inner layer of fine-grained Cr oxide or spinel oxide and an outer layer of Ni-Fe spinel oxide and Ni hydroxide. A growth model of the passive films on Alloy 690 in high-temperature alkaline environments is proposed and discussed.

British Library Electronic Table of Contents (United Kingdom)

To improve the friction and wear behavior of carbon fabric reinforced polymer composites (CFRP), nano-SiO2 was deposited on the fabric surface. The friction and wear behavior of the resulting composites were investigated on a model ring-on-block test rig. Experimental results revealed that fiber surface treatment contributed to largely improve the tribological properties of the CFRP composites. Scanning electron microscope (SEM) investigation showed that the worn surface of the surface modified CFRP composite was smoother under given load and sliding rate. Field emission scanning electron microscopy (FESEM), FTIR and X-ray photoelectron spectroscopy (XPS) studies of the carbon fiber surface showed that nanostructured Sio2 thin film can be obtained by SiO2 sols deposition, which improved th...

Energy Technology Data Exchange (ETDEWEB)

The effect of Mo addition as an alloying element to stainless steel alloys is investigated by capacitance (Mott Schottky approach), and photoelectrochemistry measurements. Complementary studies were made using Auger electron spectroscopy and X-ray photoelectron spectroscopy. The Mott-Schottky approach and the photoelectrochemical studies showed that the presence of Mo as an alloying element affects the semiconductive properties of the oxide films. The analytical results have shown that the oxide films formed on stainless steels are composed by an external Fe rich region and an inner Cr rich region. No significant amount of Mo was found in the outer layers of the film. The presence of Mo leads to an increase of the chromium content in the inner layers of the film, although without increasing the film thickness. (orig.) 30 refs.

British Library Electronic Table of Contents (United Kingdom)

The homogeneity of a helium dielectric barrier discharge, working at atmospheric pressure and containing oxygen as contaminant, is assessed by mapping the spatial distribution of oxygen metastable atoms in relation to the uniformity of surface properties. Tunable diode laser absorption spectroscopy is used to monitor the time evolution of the absorption coefficient corresponding to the oxygen metastable atoms on the 35S2 level, as a function of the laser absorbing path, whereas bi-dimensional Abel transform is used to obtain local information on the space distribution of the metastable atoms in the discharge. The radial distribution of the surface properties is investigated using atomic force microscopy, contact angle measurement and X-ray photoelectron spectroscopy. The results show that ...

British Library Electronic Table of Contents (United Kingdom)

A study of the stability of conducting fabrics of polyester (PES) coated with polypyrrole/PW12O40^3^- (organic/inorganic hybrid material) in different pH solutions (1, 7, 13) has been done. Washing tests were also done in views of its possible application in electronic textiles such as antistatic clothing. X-ray photoelectron spectroscopy (XPS) studies have been done to quantify the amount of counter ion that remains in the polymer matrix and determine the doping ratio (N^+/N) after the different tests. Scanning electron microscopy (SEM) was also used to observe morphological differences after the different tests. Surface resistivity changes were measured by means of electrochemical impedance spectroscopy (EIS). Scanning electrochemical microscopy (SECM) was employed to measure changes in ...

Energy Technology Data Exchange (ETDEWEB)

Chemical characterization of passive films formed on AISI 304 austenitic stainless steel, in a borate/boric acid solution at pH 9.2, under various conditions of potential, temperature, and polarizations time, was made by Auger electron spectroscopy combined with ion sputtering, and x-ray photoelectron spectroscopy (XPS). The depth chemical composition, thickness, and duplex character of the passive layers were determined after processing AES sputter profiles by their quantitative approach based on the sequential layer sputtering model. Moreover, separated contributions of elements in their oxidized and unoxidized state could be disclosed from part to part of the oxide-alloy interface. The XPS study specified the chemical bondings which take placed inside the film, between Fe and oxygen (and water).

International Nuclear Information System (INIS)

Surface study techniques were used to investigate films on Type 304 stainless steel which were formed during exposure to high purity water at 288"0C. The results indicated that the film chemistry depended strongly upon the concentration of the dissolved O_2 in the water. Films formed in water having 8 ppm O_2 were stoichiometric mixed oxides; whereas those formed in water with 10 ppb O_2 were highly defective oxyhydroxides. The latter films are not as protective as the stoichiometric oxides. Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) were used to investigate the films. (Auth.).

British Library Electronic Table of Contents (United Kingdom)

This paper presents results about the characterisation of the biomass fly ashes sourced from a thermal power plant and from a co-generation power plant located in Portugal, and the study of new cement formulations incorporated with the biomass fly ashes. The study includes a comparative analysis of the phase formation, setting and mechanical behaviour of the new cement-fly ash formulations based on these biomass fly ashes. Techniques such as X-ray diffraction (XRD), X-ray fluorescence spectroscopy (XRF), thermal gravimetric and differential thermal analysis (TG/DTA), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and environmental scanning electron spectroscopy (ESEM) were used to determine the structure and composition of the formulations. Fly ash F1 from the t...

International Nuclear Information System (INIS)

Full text: Institute for Nuclear Research, Pitesti-Mioveni, Romania in direct cooperation with the National Institute for Laser, Plasma and Radiation Physics, Magurele, Bucharest studied and prepared for coating more than 1000 tiles made of Inconel with 7-9 #mu#m of beryllium for nuclear fusion applications at JET, Culham, UK. The principles of manufacturing processes using thermal evaporation and plasma ignited in pure metal vapors as well as by Thermionic Vacuum Arc (TVA) method and the properties of the Ni and Be coatings are presented. The prepared beryllium layers were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy. (authors)

Energy Technology Data Exchange (ETDEWEB)

Calculating work-function modifications for flat-lying conjugated molecules on extended metal surfaces using density functional theory (DFT) is an extremely resource intensive task. This prevents fast screening of new molecules for their potential to optimize metal work functions for good electron or hole injection in organic electronic devices. We present a semi-classical model, which avoids that problem. This is achieved by identifying the dominant processes occurring at the interface between metal and adsorbate in the pinning-regime, which are then parameterizing their description using band-structure DFT calculations for a small training set With the resulting interdependent equations at hand, only simple gas-phase calculations are needed to predict the work-function changes induced by new molecules. The model is tested for ten molecules on three different metal surfaces, where it shows excellent agreement with photoelectron spectroscopy data on these systems.

Science.gov (United States)

An interest in electronic materials has led me to investigate new synthetic approaches to III-V' type semiconducting (13-15, current IUPAC designation for B and N groups in the Periodic Table) and magnetic (3-15) compounds. It is now possible to prepare binary (GaAs and GdP) and ternary mixed-metal (Al[sub x]Ga[sub 1-x]As) and mixed-pnictide (GaP[sub x]As[sub 1-x]) compounds in seconds from rapid, low-temperature-initiated metathesis reactions between a metal (III) trihalide and a trisodium pnictide, exemplified by MX[sub 3] + Na[sub 3]Pn [yields] MPn + 3 NaX, where M is Al, Ga, In, (Al,Ga), or a lanthanide; X is F, Cl, or I; and Pn is P, As, Sb, or (P,As). The precursors are mixed together in a dry box and ignited by light grinding with a mortar and pestle, or by brief, local heating from a hot filament. These reactions are very exothermic (calculated [Delta]H[sub rxn] (GaAs) = 138 kcal/mol) and typically reach temperatures in excess ...

International Nuclear Information System (INIS)

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier ...

Energy Technology Data Exchange (ETDEWEB)

GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias ...

Science.gov (United States)

Lipase catalyzed esterification of therapeutic drugs to functional self-assembled monolayers (SAMs) on 316L stainless steel (SS) after assembly has been demonstrated. SAMs of 16-mercaptohexadecanoic acid (-COOH SAM) and 11-mercapto-1-undecanol (-OH SAM) were formed on 316L SS, and lipase catalysis was used to attach therapeutic drugs, perphenazine and ibuprofen, respectively, on these SAMs. The reaction was carried out in toluene at 60 degrees C for 5 h using Novozyme-435 as the biocatalyst. The FTIR spectra after surface modification of -OH SAMs showed the presence of the C=O stretching bands at 1745 cm(-1), which was absent in the FTIR spectra of -OH SAMs. Similarly, the FTIR spectra after the reaction of the -COOH SAM with perphenazine showed two peaks in the carbonyl region, a peak at 1764 cm(-1), which is the representative peak for the C=O stretching for esters. The second peak at 1681 cm(-1) is assigned to the C=O stretching of the remaining unreacted terminal COOH. XPS spectra ...

Science.gov (United States)

WR 104 is the prototype for a small but growing group of stars that present the remarkably striking appearance of pinwheels. High resolution images of WR 104 show the (apparently) face-on spiral turning with an 8 month period. The pinwheel is assumed to be composed of dust produced via colliding winds in a low-inclination WR+OB binary. These assumptions have been very successful in modeling the imaging, but remain largely untested by spectroscopy. Strong motivation for further study of this system has emerged. Recent theory suggests that some gamma-ray bursts (GRB's) are core-collapse supernovae viewed nearly pole-on. The WC class Wolf-Rayet star in WR 104 is the type of star thought to be a possible GRB progenitor. If the orbit (and thus stellar rotation axes) are pole-on, the effects on Earth's biosphere could be significant. Confrontation of the face-on colliding-wind binary model with eight years of spectroscopy, offering full phase coverage of WR 104, is presented and many of ...

International Nuclear Information System (INIS)

Electron and ion beam dynamics of the PF-1000 facility were investigated for the first time at its upper energy limit (?1 MJ) in relation to neutron emission, the pinch's plasma ('target') characteristics and some other parameters with the help of a number of diagnostics with ns temporal resolution. Special attention was paid to the temporal and the spatial cross correlations of different phenomena. Results of these experiments are in favour of a neutron emission model based on ion beam-plasma interaction with three important features: (1) the plasma target is hot and confined during a few 'inertial confinement times'; (2) the ions of the main part of the beam are magnetized and entrapped around the pinch plasma target for a period longer than the characteristic time of the plasma inductive storage system and (3) ion-ion collisions (both fusion collisions, due to head-on impacts and Coulomb collisions) are responsible for neutron emission. Analysis has shown that one of the ways for ...

International Nuclear Information System (INIS)

The paper presents the investigations of plasma streams generated by pulsed plasma gun 'Prosvet' operated with different gases: krypton (m=84) and helium (m=4). Contour parameters of working gas spectral lines (full intensities and half-widths) are used for determination of spatial distributions of the electron density and temperature. Temporal distributions of the spectral lines intensities (both neutrals and ions of working gas), impurity spectral lines and continuum intensities are analyzed. Plasma stream velocity was estimated by time-of-flight method between two monochromators (MUM) connected with photo-multiplier. longitudinal distributions of the plasma pressure for different time moments and varied distances from the accelerator output have been used for investigation of the plasma stream dynamics and study the plasma compression in the focus region for different operational regimes of plasma accelerator. Experiments show that operation regime of the ...

Energy Technology Data Exchange (ETDEWEB)

The B-Factory which is constructed by National Laboratory for High Energy Physics is the device for elucidating the breakdown of symmetry of matter and antimatter by studying the behavior of B mesons which are generated in large quantity when the electrons and the positrons which are accelerated to light velocity level are collided. In order to maintain electron beam-positron beam bunch circling the ring at light velocity stably, the instability of the coupled bunch must be overcome. For this purpose, the ultrahigh speed beam position digital feedback control system was developed. This system is composed of the high speed input-output substrate using GaAs LSI, the feedback computation substrate using complementary metal oxide semiconductor and the memory mounted on it, and the real time operation device. The development of both substrates and their functions are explained. The real time data collection and the change of computation parameters for specific bunch in ...

International Nuclear Information System (INIS)

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first observation of strain-enhanced electron spin polarization for ...

International Nuclear Information System (INIS)

Thinning specimens to electron transparency for electron microscopy analysis can be done by conventional (2-4 kV) argon ion milling or focused ion beam (FIB) lift-out techniques. Both these methods tend to leave 'mottling' visible on thin specimen areas, and this is believed to be surface damage caused by ion implantation and amorphisation. A low energy (250-500 V) Argon ion polish has been shown to greatly improve specimen quality for crystalline silicon samples. Here we investigate the preparation of technologically important materials for nanoanalysis using conventional and lift-out methods followed by a low energy polish in a GentleMill"T"M low energy ion mill. We use a low energy, low angle (6-8 deg.) ion beam to remove the surface damage from previous processing steps. We assess this method for the preparation of technologically important materials, such as steel, silicon and GaAs. For these materials the ability to create specimens from specific sites, and ...

Energy Technology Data Exchange (ETDEWEB)

(Al{sub y}Ga{sub 1{minus}y}){sup 1{minus}x}In{sub x}P semiconductor alloys lattice-matched to GaAs are widely used in visible optoelectronic devices. One of the most recent developments in this area is the AlGaInP-based red vertical cavity surface emitting laser (VCSEL). These lasers, which employ AlGaInP active regions and AlGaAs distributed Bragg reflectors (DBRs), have demonstrated continuous-wave (CW) lasing over the 630--690 nm region of the spectrum. Applications for these lasers include plastic fiber data communications, laser printing and bar code scanning. In this paper, the authors present an overview of recent developments in the processing and performance of AlGaInP based VCSELs. This overview will include a review of the general heterostructure designs that have been employed, as well as the performance of lasers fabricated by both ion implantation and selective oxidation.

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power conversion efficiency of the solar cell.

International Nuclear Information System (INIS)

Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion implantation.

Energy Technology Data Exchange (ETDEWEB)

The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, all as a function of temperature, have been deduced from the fits of the experimental ...

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

International Nuclear Information System (INIS)

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. [copyright] 2001 American Institute of ...

International Nuclear Information System (INIS)

Using standard microfabrication techniques, it is now possible to construct devices that appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date, the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high-frequency operation, have not been tested in detail. We present high-accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single ac-modulated gate at 340 MHz driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a ...

International Nuclear Information System (INIS)

We theoretically model a nuclear-state preparation scheme that increases the coherence time of a two-spin qubit in a double quantum dot. The two-electron system is tuned repeatedly across a singlet-triplet level-anticrossing with alternating slow and rapid sweeps of an external bias voltage. Using a Landau-Zener-Stueckelberg model, we find that in addition to a small nuclear polarization that weakly affects the electron spin coherence, the slow sweeps are only partially adiabatic and lead to a weak nuclear spin measurement and a nuclear-state narrowing which prolongs the electron spin coherence. This resolves some open problems brought up by a recent experiment. We also show that the electronic two-spin states singlet and triplet T_+ are promising candidates for the implementation of a qubit in GaAs double quantum dots (DQD). A coherent superposition of the two-spin states is obtained by finite time Landau-Zener-Stueckelberg interferometry and the single qubit ...

International Nuclear Information System (INIS)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

CERN Document Server

Amperostatic coulometry was applied for the thickness measurement of Sn-Ag hot dip coatings, which comprise an extended Sn-Cu interdiffusion layer. Complementary measurements, notably weight loss, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, X-ray fluorescence (XRF), and dynamic secondary ion mass spectroscopy were performed in order to obtain a better interpretation of the coulometry results. Based on the experimental results presented in this article, the three potential changes observed during coulometry measurements are ascribed to (i) the entire dissolution of pure Sn, (ii) the formation of a CuCl salt layer, and (iii) the surface passivation. The measurement of the pure Sn mass is well reproducible despite strong coating thickness variations detected by XRF. Several experimental problems, in particular, a coating undercutting, hamper the determination of the Sn mass in the intermetallic Sn-Cu layer. (19 refs).

International Nuclear Information System (INIS)

For the first time, rheological phase method, a simple and effective route, is applied to synthesize novel cathode material LiCoPO4. X-ray diffraction spectrometer (XRD), X-ray photoelectron spectrometer (XPS), transmission electron microscope (TEM) and electrochemical impedance spectroscopy (EIS) are taken to investigate this material, respectively. XRD figure shows that the rheological sample is better crystallized than the solid-state one. XPS result of the rheological sample exhibits that the valence of Co is 2+. TEM images show that better dispersed particles with smaller size can be formed by rheological method comparing to the solid-state route. Charge-discharge test is carried out in the range of 3.0-5.0 V at 0.2 mA cm-2. The initial discharge capacity for rheological phase and solid-state powder is 71.5 and 30.9 mAh g-1, respectively. The better electrochemical property should be ascribed to the better crystallized rheological phase production with better ...

Energy Technology Data Exchange (ETDEWEB)

The structural change of the (100-x)(0.6Li{sub 2}S{center_dot}0.4SiS{sub 2})centre dotxLi{sub 3}PO{sub 4} oxysulfide glassesduring crystallization was analyzed by means of solid-state nuclear magnetic resonance (NMR) and X-ray photoelectron spectroscopy (XPS). The unique tetrahedral units of SiO{sub n}S{sub 4-n} (n=1,2,3) and PO{sub n}S{sub 4-n} (n=1,2,3) present in the glass samples vanished and the SiS{sub 4}, PS{sub 4}, SiO{sub 4} units increased with proceeding of the crystallization process. Nonbridging sulfur and oxygen atoms decreased while bridging oxygens and S{sup 2-} increased with proceeding of the crystallization process. Large structural difference between the glass and the corresponding crystallized sample explained the high stability against crystallization found in the oxysulfide glass with the composition of X=5. (author)

International Nuclear Information System (INIS)

Hybrid organic-inorganic coatings with phosphonate functionalities have been synthesized and evaluated as prospective surface treatments for magnesium materials. These coatings have been processed via a sol-gel route by hydrolysis and condensation of a mixture of diethylphosphonatoethyltriethoxy-silane and tetraethoxy-silane with variable molar ratios. The coatings morphology and the surface chemistry at the coating/substrate interface have been characterized using scanning electron microscopy, X-ray photoelectron spectroscopy, "3"1P nuclear magnetic resonance spectroscopy, and time-of-flight secondary ion mass spectrometry. The corrosion protection performance of the coatings deposited on magnesium alloy AZ31B has been examined by a group of electrochemical techniques including potentiodynamic polarization and electrochemical impedance spectroscopy. In addition, a scanning Kelvin probe technique has been used to investigate interfacial properties of the coatings. ...

Energy Technology Data Exchange (ETDEWEB)

The knowledge shown in this work of the relationships between the oxidation stage of chromium, molybdenum and tungsten and their catalytic activity in some hydrocarbon reactions was achieved by the combination of separate investigations of reduction properties and the catalytic activity of the catalysts concerned. To characterize the electronic state of the reduced surfaces, X-ray photo-electronic spectroscopy was mainly used, supplemented by electron spin resonance. The catalyst activity was measured in conventional apparatus (flow, pulse and gradient-free reactors). (orig.) [Deutsch] Die in dieser Arbeit dargestellten Erkenntnisse ueber die Zusammenhaenge zwischen der Oxidationsstufe von Chrom, Molybdaen und Wolfram und ihrer katalytischen Aktivitaet in einigen Kohlenwasserstoffreaktionen wurden durch die Kombination getrennter Untersuchungen ueber Reduktionseigenschaften und katalytische Aktivitaet der betreffenden Katalysatoren erzielt. Fuer die ...

International Nuclear Information System (INIS)

Potassium deposition in ultrahigh vacuum on 12-(3-thienyl)dodecanethiol monolayers assembled on gold surfaces has been investigated using X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). Angle-resolved XPS indicates that initially deposited potassium penetrates the self-assembled monolayer (SAM) and diffuses to the SAM/Au interface. Even after large metal doses, the presence of thiophene ring valence electronic states in the UPS spectra confirms that most of the thiophene rings (at the SAM/vacuum interface) are not covered by potassium. The binding energy shifts of the thiophene ring valence states and the C1s and thiophene S2p peaks, referenced to the Fermi level, are due to the work function changes of the gold substrate. This indicates that these electronic states are pinned to the vacuum level, in contrast to the thiolate S2p orbital, which is pinned to the Fermi level. For large potassium doses, the appearance of new features in the UPS ...

British Library Electronic Table of Contents (United Kingdom)

Herein, we report engineering of nanostructured p-CuIn3Se5/n-CdS heterojunction thin film on a glass substrate, which is prepared at room temperature using simple wet chemical approach involving ion exchange reactions between CdS and Cu^+, In^3^+ and Se^2^- ions in alkaline medium. The uniform deposition of heterojunction thin films is achieved by optimizing the pH, temperature and molarity of the reactant bath. The as-deposited thin-films were annealed at 200^oC in air for 1h and further characterized for structural, optical and electrical properties using UV-Vis spectrophotometer, X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), Hall effect for type of conductivity, and I-V measurement to investigate the char...

Energy Technology Data Exchange (ETDEWEB)

The electron affinities of indium and thallium were measured in separate experiments using the laser-photodetachment electron spectroscopy technique. The measurements were performed at the University of Nevada, Reno. Negative ion beams of both indium and thallium were extracted from a cesium-sputter negative ion source, and mass analyzed using a 90{sup o} bending magnet. The negative ion beam of interest was then crossed at 90{sup o} with a photon beam from a cw 25-Watt Ar{sup +} laser. The resulting photoelectrons were energy analyzed with a 160{sup o} spherical-sector spectrometer. The electron affinity of In({sup 2}P{sub 1/2}) was determined to be 0.404 {+-} 0.009 eV and the electron affinity of thallium was determined to be 0.377 {+-} 0.013 eV. The fine-structure splittings in the ground states of the negative ions were also determined. The experimental measurements will be compared to several recent theoretical predictions.

Energy Technology Data Exchange (ETDEWEB)

The objective of this work was to investigate the efficiency of imidazole derivatives for corrosion inhibition of copper in 0.5 M hydrochloric acid. Corrosion inhibition was studied using impedance spectroscopy. Imidazole and its derivatives 4-methylimida-zole, 4-methyl-5-hydroxymethylimidazole, 1-phenyl-4-methylimidazole, 1-(p-tolyl)-4-methylimidazole were investigated. These studies have shown that 1-(p-tolyl)-4-methylimidazole is the best inhibitor in this series and that it acts as mixed inhibitor. The nature of the chemical interaction between these molecules and the copper surface was investigated by Cu exposed to solutions having two very different pH values: 0.5 M HCl and unbuffered purified water. X-ray photoelectron spectroscopy and secondary ion mass spectrometry were used to explore the nature of the interaction. Possible mechanisms of corrosion inhibition for these molecules are discussed.

Energy Technology Data Exchange (ETDEWEB)

The passive films formed on iron metal, alloys or stainless steel are extremely thin oxides or hydroxides and possess the properties of high chemical stability in the environment. These films show characteristics interested both electrical as well as electrochemical point of view due to the thin thickness of the films. Auger Electron Spectroscopy, X-ray Photoelectron spectroscopy and so on which are the conventional electrochemical measurement methods or the surface analysis methods are used for the analysis and evaluation of these films, however, at present, the application of research technique focusing the superconductor characteristics of the films are tried. Although, the potential modulation reflection spectroscopy method has merits like possibility of in-situ measurement, high precision, possibility of stable analysis even for extremely thin film and so forth, it has also demerits like difficulty to response the potential modulation of hydroxides and also ...

Energy Technology Data Exchange (ETDEWEB)

In this work, a new class of thiadiazole derivatives, namely 3,5-bis(2-thienyl)-1,3,4-thiadiazole (2-TTH) and 3,5-bis(3-thienyl)-1,3,4-thiadiazole (3-TTH), have been studied as possible corrosion inhibitors for mild steel in molar hydrochloric acid (1M HCl). Polarisation curves and AC impedance methods have been used. These studies have shown that the thiadiazole derivatives were very good inhibitors for mild steel in 1M HCl. Comparison of results showed that 3-TTH was the best inhibitor. The potential of zero charge (PZC) of mild steel was studied by ac impedance method, and the mechanism of adsorption has been predicted. X-ray photoelectron spectroscopy surface analysis with thiadiazole derivatives shows that it chemisorbed at the mild steel/HCl interface. The adsorption of these inhibitors followed Langmuir's adsorption isotherm. The electronic properties of 2-TTH and 3-TTH, obtained using the AM1 semi-empirical quantum chemical approach, were ...

International Nuclear Information System (INIS)

We present first-time measurements of the Fermi surface and low-energy electronic structure of intermetallic compounds Gd_2PdSi_3 and Tb_2PdSi_3 by means of angle-resolved photoelectron spectroscopy (ARPES). We show that the Fermi surface in both compounds consists of an electron barrel at the #GAMMA# point surrounded by spindle-shaped electron pockets originating from the same band, with the band bottom of both features lying at 0.5 eV below the Fermi level. From the experimentally measured band structure, we estimate the momentum-dependent RKKY coupling strength and demonstrate that it is peaked at the 1/2#GAMMA# K wave vector. Comparison with neutron diffraction data from the same crystals shows perfect agreement of this vector with the propagation vector of the low-temperature in-plane magnetic order, thereby demonstrating the decisive role of the Fermi surface geometry in explaining the complex magnetically ordered ground state of ternary rare earth silicides.

Energy Technology Data Exchange (ETDEWEB)

Carbon supported catalysts can lose their activity over a period of time due to the sintering of the nanometer-sized catalyst particles. The sintering of metal clusters on carbon supports can occur due to the weak interaction between the metal and the support and also due to the corrosion of carbon, especially in fuel cell electrocatalysts. The sintering may be reduced by increasing the interaction between the metal and the support and also by increasing the corrosion resistance of carbon supports. In an effort to mitigate the growth of the nanoparticles, carbon-substituted boron defects were introduced in the carbon lattice. The interaction between the Pt nanoparticles on the pure and boron-doped carbon supports was examined using X-ray photoelectron spectroscopy (XPS). The results indicate that the interaction between the Pt nanoparticles and the boron-doped carbon support was slightly stronger than the interaction between the Pt nanoparticles and the pure carbon ...

International Nuclear Information System (INIS)

The electronic structure and surface interactions vapor-deposited Cu on single-crystal and polycrystalline Bi_2Ca/sub 1+//sub x//sub Sr>2-//sub x//sub Cu>2/O/sub 8+//sub y/ were studied using x-ray photoelectron spectroscopy. The results are compared to the Cu/YBa_2Cu_3O/sub 7-//sub x/ interface. Changes in the Cu 2p satellite emission indicate that the Cu adatoms do not disrupt Bi_2Ca/sub 1+//sub x/Sr/sub 2-//sub x/Cu_2O/sub 8+//sub y/ as extensively as YBa_2Cu_3O/sub 7-//sub x/. However, deposition of Cu induces changes in the Bi environment in the superconductor, and surface segregation of Bi metal was observed at high coverages. Core-level attenuation results suggests minimal outdiffusion of oxygen, in contrast with what is observed for Cu/YBa_2Cu_3O/sub 7-//sub x/.

Energy Technology Data Exchange (ETDEWEB)

Two measurement methods to determine the rate of neutral free radical production by the photo-deionization of negative ion beams (PDINIB) are introduced. These methods, namely, photoelectron-current measurement by low-frequency electro-modulation probe (PMMP) and measurement of decrease in the negative-ion beam current (DNIC) were employed to evaluate the production rate in a trial surface-processing apparatus developed in the author's laboratory utilizing a steady-flux refined beam of neutral free radicals (RBNR) produced by the PDINIB procedure. A {sup 63}Cu{sup -} negative ion beam of kinetic energy E{sub i} varied up to 15 keV was irradiated with a 514.5 nm visible light beam from a 25 W CW Ar{sup +} ion laser. The detection limit of the production rate by the PMMP setup was as high as 6 x 10{sup 9} s{sup -1} under the condition that E{sub i}=15 keV, the negative-ion beam current I{sub i}=4 {mu}A and the laser power P=6 W. The DNIC method is simpler ...

International Nuclear Information System (INIS)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an anneal and the fact that the dose loss is partially reversible. Finally, we have found that normal etching ...

International Nuclear Information System (INIS)

In this work we investigate an iron oxide thin film grown with atomic layer deposition for a gas sensor application. The objective is to characterize the structural, chemical, and electrical properties of the film, and to demonstrate its gas-sensitivity. The obtained scanning electron microscopy and atomic force microscopy results indicate that the film has a granular structure and that it has grown mainly on the glass substrate leaving the platinum electrodes uncovered. X-ray diffraction results show that iron oxide is in the #alpha#-Fe_2O_3 (hematite) phase. X-ray photoelectron spectra recorded at elevated temperature imply that the surface iron is mainly in the Fe"3"+ state and that oxygen has two chemical states: one corresponding to the lattice oxygen and the other to adsorbed oxygen species. Electric conductivity has an activation energy of 0.3-0.5 eV and almost Ohmic current-voltage dependency. When exposed to O_2 and CO, a typical n-type response is ...

International Nuclear Information System (INIS)

The electrochemical behaviour of passive films formed on one austenitic stainless steel (AISI 304) and one ferritic stainless steel (AISI 446) in solutions with pH between 0.6 and 8.4 was studied by capacitance measurements and photocurrent spectroscopy. Compositional characterization of the passive films was done by X-ray photoelectron spectroscopy. The capacitance increases with decreasing pH. Doping densities evaluated from Mott-Schottky plots are in the range 2-6 x 10"2"0 cm"-"3 and increased with the pH in the neutral/alkaline range while in pH 0.6, values above 10"2"1 cm"-"3 were found. The bandgap energy indicates two transitions, at 2.5-2.8 and 3.2 eV. The analytical data reveal that, as the pH increased, the films become enriched in Fe(II) and Fe(III), whereas the Cr(III) gradually decreases. The films formed at very low pH had a behaviour that contrasts with that of the films formed in the neutral/alkaline media. The films are described by a bilayer ...

International Nuclear Information System (INIS)

For many centuries paper was the main material for recording cultural achievements all over the world. Paper is mostly made from cellulose with small amounts of organic and inorganic additives, which allow its identification and characterization and may also contribute to its degradation. Prior to 1850, paper was made entirely from rags, using hemp, flax and cotton fibres. After this period, due to the enormous increase in demand, wood pulp began to be commonly used as raw material, resulting in rapid degradation of paper. Spectroscopic techniques represent one of the most powerful tools to investigate the constituents of paper documents in order to establish its identification and its state of degradation. This review describes the application of selected spectroscopic techniques used for paper characterization and conservation. The spectroscopic techniques that have been used and will be reviewed include: Fourier-Transform Infrared spectroscopy, Raman spectroscopy, Nuclear Magnetic ...

Energy Technology Data Exchange (ETDEWEB)

Capacitance dispersion on the fractal carbon electrode with edge and basal orientations was investigated using atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and a.c.-impedance spectroscopy. For this purpose, four types of as-received pyrolytic graphite electrode, as-received, mechanically polished, and as-activated glassy carbon electrodes were prepared with different surface irregularities and amounts of edge orientations. The apparent self-similar fractal dimensions of the carbon electrodes were determined from the analyses of AFM images based upon triangulation method. The amounts of edge orientations on the surface of the carbon electrodes were qualitatively estimated from the XPS analysis of surface acidic functional groups that were preferably formed on the edge planes by the heat treatment of the carbon electrodes. The values of the constant phase element exponent {alpha} determined from the apparent self-similar fractal dimensions ...

International Nuclear Information System (INIS)

A tri-functional polyhedral oligomeric silsesquioxane (POSS) based silane precursor R_xR_yR_z(SiO_3_/_2)_n (x + y + z = n = 6, 8, 10, ...) bearing 3-(N-(3-triethoxysilylpropyl)ureido)propyl, isooctyl and perfluoropropyl groups was synthesized and investigated as corrosion protective coating for AA 2024 alloy. Infrared reflection-absorption (IR RA) combined with X-ray photoelectron spectroscopy and atomic force microscopy provided information about partial self-assembling of coatings having a fluorine enriched upper layer with a low surface energy (#gamma#"t"o"t = 12.37 mN/m). The structural changes that accompanied corrosion produced under chronocoulometrical conditions were assessed from ex-situ IR RA spectra. A new band at 1690-1700 cm"-"1 appeared above the corrosion potential, and was assigned to the formation of amidonium ions and consequent relaxation of urea-urea associations.

British Library Electronic Table of Contents (United Kingdom)

Monodisperse europium-activated titania hollow phosphors had been synthesized by a facile one-pot hydrothermal method using carbon spheres as hard templates. Samples were characterized by X-ray powder diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, energy dispersive spectrometer and photoluminescence spectrum. The strongest emission intensity was observed with TiO2:Eu0.2 hollow spheres and TiO2:Eu0.2 hollow spheres calcining at 550^oC. Moreover, the strongest excitation of TiO2:Eu0.2 hollow spheres transferred from 400 to 500^oC and the effective nonradiative energy transfer from the TiO2 hollow spheres host matrix to Eu^3^+ ions crystal field states was realized due to changes of crystalline field in the environment around Eu^3^+ ions occupying Ti^4^+ site...

International Nuclear Information System (INIS)

X-ray emission spectroscopy (XES) and X-ray photoelectron spectroscopy (XPS) methods were employed in the present paper to investigate the electronic structure of face-centred cubic (fcc) molybdenum dioxide, fcc-MoO_2. For the mentioned compound, the XES O K#alpha# and Mo L#beta#_2_,_1_5 bands reflecting the valence O p- and Mo s,d-like states, respectively, were derived and compared on a common energy scale with the XPS valence-band spectrum. For comparison, the similar experimental studies of the electronic structure were made for a usual orthorhombic form of molybdenum trioxide, MoO_3. Band-structure calculations of fcc-MoO_2 were made using the full potential linearized augmented plane wave (FP-LAPW) method. A rather good agreement of the experimental XES and XPS results and the theoretical FP-LAPW data for the electronic properties of fcc-MoO_2 has been achieved in the present paper. A new near-Fermi sub-band was detected on both the XES Mo L#beta#_2_,_1_5 ...

Energy Technology Data Exchange (ETDEWEB)

The Advanced Photon Source consists of five accelerators. The injection timing system provides the signals required to cause a bunch emitted from the electron gun to navigate through intermediate accelerators to a specific bucket (1 out of 1296) within the storage ring. Two linacs and a positron accumulator ring operate at 60Hz while a booster synchrotron ramps and injects into the storage ring at 2Hz. The distributed, modular VME/VXI-based injection timing system is controlled by two EPICS-based input/output controllers (IOCs). Over 40 VME/VXI cards have been developed to implement the system. Card types range from 352MHz VXI timing modules to VME-based fiber optic fanouts and logic translators/drivers. All timing is distributed with fiber optics. Timing references are derived directly from machine low-level rf of 9.77MHz and 352MHz. The timing references provide triggers to programmable delay generators. Three grades of timing are provided. Precision timing is ...

International Nuclear Information System (INIS)

A two module electron beam source operating over a wide range of output parameters has been designed and fabricated to be used in conjunction with a pair of electron beam sustained CO_2 lasers. Each module comprised a grid-controlled thermionic electron beam gun including a compact grid pulser for control of the electron beam, a 250 kV thyratron switched modulator for acceleration of the electron beam, a 1 kHz filament heater and a complex computerized control system. The system was designed to reliably produce 45 #mu#s wide electron pulses of 150-200 keV energy, operate at repetition rates of 1-10 pps and current densities of 5-20 mA/cm"2. Additional parameters are listed. The high voltage cathode assembly employs 132 thoriated tungsten filaments distributed over the area of the 250 cm x 10 cm output window. The cathode assembly including the control grids is supported by two high voltage ceramic bushings in a stainless steel vacuum chamber. For acceleration of ...

Energy Technology Data Exchange (ETDEWEB)

The Stardust sample return capsule will return to Earth in January 2006 with primitive debris collected from Comet 81P/Wild-2 during the fly-by encounter in 2004. In addition to the cometary particles embedded in low-density silica aerogel, there will be microcraters preserved in the Al foils (1100 series; 100 {micro}m thick) that are wrapped around the sample tray assembly. Soda lime spheres ({approx}49 {micro}m in diameter) have been accelerated with a Light Gas Gun into flight-grade Al foils at 6.35 km s{sup -1} to simulate the capture of cometary debris. The experimental craters have been analyzed using scanning electron microscopy (SEM) and x-ray energy dispersive spectroscopy (EDX) to locate and characterize remnants of the projectile material remaining within the craters. In addition, ion beam induced secondary electron imaging has proven particularly useful in identifying areas within the craters that contain residue material. Finally, high-precision ...

Science.gov (United States)

These classroom guides, designed to accompany the daily CNN (Cable News Network) Newsroom broadcasts for the month of October 2000, provide program rundowns, suggestions for class activities and discussion, student handouts, and a list of related news terms. Top stories include: Chinese authorities detain Falun Gong protesters on Tiananmen Square and Pope John Paul II angers China by canonizing Chinese martyrs, U.S. presidential candidates prepare for the first presidential debate, U.S. presidential candidates debate education issues, Danville, Kentucky prepares for the first U.S. vice presidential debate, and Yugoslav protesters seize parliament (October 2-6); Yugoslavian president Vojislav Kostunica takes office, recent clashes between Arabs and Israelis concern neighboring Arab states, North Korea observes 55 years of communism with celebrations, Al Gore and George W. Bush meet in the second presidential debate, and Violence in the Mideast and an attack on a U.S. ship in Yemen have ...

International Nuclear Information System (INIS)

A family of industrial irradiators is being developed by AECL to cover an electron-beam energy range from 5 to 18 MeV at beam powers between 20 and 250 kW. The IMPELA family of irradiators is designed for push button, reliable operation. The major irradiator components are modular, allowing for later upgrades to meet increased demands in either electron or X-ray mode. Interface between the control system, irradiator availability and dose quality assurance is in conformance with the most demanding specifications. The IMPELA irradiators use a klystron-driven, standing-wave, L-band accelerator structure with direct injection from a rugged, triode electron gun. Direct control of the accelerating field during the beam pulse ensures constant output beam energy, independent of beam power. The first member of the family, the IMPELA 10/50 (10 MeV, 50 kW), is in the final stages of assembly at Chalk River Nuclear Laboratories. The IMPELA 10/50 is constructed around a 3.25 m ...

Science.gov (United States)

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser projection displays, holographic memories, and plastic fiber communication.

Science.gov (United States)

Data are presented demonstrating short-wavelength (approx. <6400 A) continuous (cw) laser operation of p-n diode In/sub 0.5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0.5/P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30 /sup 0/C to room temperature (RTapprox. =300 K, lambdaapprox. =6395 A) the threshold current density changes from 2.3 x 10/sup 3/ A/cm/sup 2/ (-30 /sup 0/C) to 3.7 x 10/sup 3/ A/cm/sup 2/ (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7 x 10/sup 3/ W/cm/sup 2/, J/sub eq/approx.2.9 x 10/sup 3/ A/cm/sup 2/) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

Science.gov (United States)

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al{sub 0.5}Ga{sub 0.5}As and In{sub 0.53}Ga{sub 0.47}As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, {ital E}({Gamma}{sub 1{ital c}}) of AlP, {ital E}({ital L}{sub 1{ital c}}) of AlAs, and {ital E}({ital L}{sub 1{ital c}}) of AlSb are discussed and attributed to various experimental uncertainties. Several other quasiparticle-excitation-related properties are ...

Science.gov (United States)

The photopumped phonon-assisted laser operation (612 nm, 77 K) of a high-gapIn/sub 1/minus//ital y//(Al/sub /ital x//Ga/sub 1/minus//ital x//)/sub /ital y//P quantum wellheterostructure (QWH) lattice matched to GaAs (/ital y/approx.0.5) is identified usinga single rectangular sample that is shifted in its heat sinking from (a) low/ital Q/ when clamped onto Au (bare edges) to (b) high /ital Q/ when furthercompressed into Au with all four edges reflecting. For the low-/ital Q/ QWH samplephotopumped in a spot (partially photopumped), phonon-assisted laser operation(abrupt threshold, narrow spectrum) is observed on closely spaced end-to-endlaser modes ..delta../ital E/=/h bar/..omega../sub LO/approx.45--47 meV below the lowestconfined-particle transitions. For the /ital same/ sample shifted tohigh /ital Q/, edge-to-edge laser operation across the sample on confined-particletransitions is ''turned on'' also, thus providing an ...

Energy Technology Data Exchange (ETDEWEB)

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization ...

Science.gov (United States)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub 0.5/P ...

Energy Technology Data Exchange (ETDEWEB)

We have observed resonant changes in the current-voltage characteristics of miniband semiconductor superlattices when the Bloch frequency is resonant with a terahertz field and its harmonics: the inverse Bloch oscillator effect. The resonant feature consists of a peak in the current which grows with increasing laser intensity accompanied by a decrease of the current at the low bias side. The peak position moves linearly with the laser frequency. When the intensity is increased further the first peak starts to decrease and a second peak at about twice the voltage of the first peak is observed due to a two photon resonance. At the highest intensities we observe up to a four photon resonance. A superlattice is expected to show negative differential conductance due to the strong nonparabolicity of the miniband. In this situation the carriers should undergo Bloch oscillations with a frequency {omega}{sub B} = eEd/h. Transient Bloch oscillations of photo excited carriers have been observed ...

Energy Technology Data Exchange (ETDEWEB)

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, ...

International Nuclear Information System (INIS)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for visible-wavelength electro-optic ...

Energy Technology Data Exchange (ETDEWEB)

Using conventional deep level transient spectroscopy (DLTS), we have characterized the defects introduced in OMVPE n-GaAs at 15 K by 5.4 MeV alpha particle irradiation from an americium 241 radio-nuclide. After this low temperature irradiation two new defects not yet reported for alpha irradiated GaAs before, E[alpha]7 and E[alpha]9, were detected 0.07 eV and 0.19 eV below the conduction band, respectively. The introduction rates of E[alpha]7 and E[alpha]9 are calculated to be 41 cm[sup -1] and 187 cm[sup -1] respectively. It was observed that both defects obeyed first order annealing kinetics, with E[alpha]9 being removed at 225 K and E[alpha]7 at 245 K corresponding to the well known stage I annealing region. The annealing rate of E[alpha]7 corresponds to an activation energy of 0.86 eV, with a pre-exponential factor of 1.0 x 10[sup 15]s[sup -1]; and the removal of E[alpha]9 has an activation energy of 0.88 eV and a pre-exponential factor of 1.7 x 10[sup 17]s[sup ...

Science.gov (United States)

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a GaInP active layer was found to depend on growth conditions and dopant behaviour during the growth, and it varied ...

International Nuclear Information System (INIS)

Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H_2SO_4). Alloys with two nitrogen doses have been prepared (2.5x10"1"6 and 2x10"1"7 N atoms/cm"2). The implanted alloys have been characterized by "1"5N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical behaviour of the alloy. The anodic dissolution in the active state is enhanced, and the ...

Science.gov (United States)

A WO(3)/TiO(2) composite, hollow-sphere photocatalyst with average diameter of 320 nm and shell thickness of 50 nm was successfully prepared using a template method. UV-vis diffuse reflectance spectra illustrated that the main absorption edges of the WO(3)/TiO(2) hollow spheres were red-shifted compared to the TiO(2) hollow spheres, indicating an extension of light absorption into the visible region of the composite photocatalyst. The WO(3) and TiO(2) phases were confirmed by X-ray diffraction analysis. BET isotherms revealed that the specific surface area and average pore diameter of the hollow spheres were 40.95 m(2)/g and 19 nm, respectively. Photocatalytic experiments indicate that 78% MB was degraded by WO(3)/TiO(2) hollow spheres under visible light within 80 min. Under the same conditions, only 24% MB can be photodegraded by TiO(2). The photocatalytic mineralization of MB, catalyzed by TiO(2) and WO(3)/TiO(2), proceeded at a significantly higher rate under UV irradiation than ...

Energy Technology Data Exchange (ETDEWEB)

In an aim to develop photo-responsive composites, the UV photo-reduction of aqueous titanium oxide nanoparticle-graphene oxide (TiO{sub 2}-GO) dispersions (Lambert et al. J Phys. Chem. 2010 113 (46), 19812-19823) was undertaken. Photo-reduction led to the formation of a black precipitate as well as a soluble portion, comprised of titanium oxide nanoparticle-reduced graphene oxide (TiO{sub 2}-RGO). When allowed to slowly evaporate, self assembled titanium oxide nanoparticle-graphene oxide (SA-TiO{sub 2}-RGO) films formed at the air-liquid interface of the solution. The thickness of SARGO-TiO{sub 2} films range from {approx}30-100 nm when deposited on substrates, and appear to be comprised of a mosaic assembly of graphene nanosheets and TiO{sub 2}, as observed by scanning electron microscopy. Raman spectroscopy and X-ray photoelectron spectroscopy indicate that the graphene oxide is only partially reduced in the SA-TiO{sub 2}-RGO material. These films were also ...

Energy Technology Data Exchange (ETDEWEB)

The adhesion of a Mg:Ag cathode to the tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) in organic light emitting devices (OLEDs) can be greatly enhanced by a remote plasma treatment of the Alq{sub 3} layer using either air or N{sub 2} prior to metal deposition. The altered surface properties which lead to increased sticking coefficients of Mg and Ag, as well as enhanced adhesion, are attributed to the introduction of new functional groups into the organic layer, as observed by X-ray photoelectron spectroscopy (XPS). The storage life of the plasma treated devices in air without any capping treatment, as judged by a visible deterioration of the cathode, was increased by approximately five to six times compared to untreated OLEDs. Current-voltage characteristics and EL efficiency, however, were shown to deteriorate for devices incorporating either an air or an N{sub 2} plasma treated Alq{sub 3} layer. For OLEDs subjected to short treatment times with an N{sub 2} ...

International Nuclear Information System (INIS)

The corrosion and passivation behaviour of bulk polycrystalline martensite Ni50Mn30Ga20 and austenite Ni48Mn30Ga22 alloys was compared in electrolytes with different pH values. Linear anodic and cyclic potentiodynamic polarisation methods and anodic current transient measurements have been conducted for the alloys and their constituents to analyze free corrosion, anodic dissolution and passive layer formation processes. Electrochemically treated alloy surfaces were characterized with scanning electron microscopy (SEM) and angle-resolved x-ray photoelectron spectroscopy (XPS). The electrochemical response of both alloys is in principal similar and is dominated by the Ni oxidation. In acidic solutions (pH 0.5 and 5) a slightly higher reactivity is detectable for the martensitic alloy which is mainly attributed to enhanced dissolution processes at the multiple twin boundaries. In weakly acidic to strongly alkaline solutions (pH 5-11) both alloys exhibit a low ...

International Nuclear Information System (INIS)

Several Mg-Y binary ribbons with Y content up to #approx#17.9 at.% were fabricated by melt-spinning. X-ray diffraction (XRD) revealed that the phase structure changes with increasing Y content from extended solid solution to partially amorphous, and then fully intermetallic Mg_2_4Y_5. Anodic potentiodynamic polarization performed in 0.01 M NaCl electrolyte (pH=12) revealed improved anodic passivity behavior compared to pure Mg for all the Mg-Y alloys. X-ray photoelectron spectroscopy (XPS) revealed that the improved passivity of Mg-Y was more related to the elemental oxidation state rather than the concentration of the surface components. To study the effect of Cl"- ion on the passivity behavior, anodic potentiodynamic and potentiostatic polarization were performed on Mg-17.9 at.% Y in alkaline (pH=12) NaCl electrolytes containing Cl"- ion in the concentration range from 0.00 to 0.50 M. The passive films formed in 0.01 M NaCl electrolyte were similar to the native ...

Energy Technology Data Exchange (ETDEWEB)

In this work, {beta}-SnS{sub 2} thin films have been prepared on glass substrates by the spray pyrolysis technique using an alcohol solution which contains tin chloride (SnCl{sub 4}) and thiourea (SC(NH{sub 2}){sub 2}) as precursors. The structural study shows that {beta}-SnS{sub 2} thin film prepared using optimal experimental conditions: substrate temperature T{sub s} = 280 deg. C and the concentration ratio of sulfur and tin elements in the spray solution x = [S]/[Sn] = 2.5, crystallizes in the hexagonal phase with a strong (0 0 1) X-ray diffraction line. In the same way, microprobe analyses (EPMA) as well as X-ray photoelectron spectroscopy (XPS) show the presence of undiserable phase of SnO{sub 2}. From the transmission and reflectance spectra, the band gap energy is 2.65 eV. On the other hand, the photothermal properties of such films have been studied, the thermal conductivity was K{sub c} = 0.85 W m{sup -1} K{sup -1} and the thermal diffusivity was D{sub c} ...

International Nuclear Information System (INIS)

A study on oxygen-plasma treatment of ink-jet paper is presented. Paper was exposed to a weakly ionized, highly dissociated oxygen plasma with an electron temperature of 5 eV, a positive-ion density of 8 x 1015 m-3 and a density of neutral oxygen atoms of 5 x 1021 m-3. Optical emission spectroscopy (OES) was applied as a method for detection of the reaction products during the plasma treatment of the paper. OES spectra between 250 and 1000 nm were measured continuously during the plasma treatment. The wettability of the samples before and after the plasma treatment was determined by measuring the contact angle of a water drop. The appearance of the surface-functional groups was determined by using high-resolution x-ray photoelectron spectroscopy (XPS), while changes in the surface morphology were monitored with scanning electron microscopy (SEM). Already after 1 s of the plasma treatment the surface, which was originally hydrophobic, changed to hydrophilic, as ...

Energy Technology Data Exchange (ETDEWEB)

In order to investigate the role of amorphous SiO{sub 2} particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO{sub 2} particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO{sub 2} was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO{sub 2} particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of {gamma}-phase and amorphous nano-SiO{sub 2} particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO{sub 2} particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite alloying layer was investigated by an electrochemical method in 3.5%NaCl solution. Compared with single ...

Energy Technology Data Exchange (ETDEWEB)

Successful interface engineering requires compositional and electronic material characterization as a prerequisite for understanding and intentionally generating interfaces in photovoltaic devices. The paper gives an overview with several examples, all referring to Cu(In,Ga)(S,Se){sub 2} ('CIGSSe')-based solar cells, with an emphasis on characterization using highly specialized methods, such as elastic recoil detection analysis, X-ray emission spectroscopy and photoelectron spectroscopy using synchrotron and ultraviolet light for excitation, inverse photoemission spectroscopy and Kelvin probe force microscopy. First, the determination of the depth profile of the band gap energy E{sub g} in the absorber layer is demonstrated. The modification of E{sub g} towards both interfaces is discussed in terms of beneficial electronic effects. Next, the interface between absorber and buffer layers with alternative and promising non-toxic materials is ...

International Nuclear Information System (INIS)

By means of an audio frequency plasma polymerisation ultra-thin gradient plasma polymer layers were deposited on zinc and zinc-coated iron. The aim was to generate an interfacial polymeric layer which bonds to an oxidised metal as well as to a subsequently applied organic coating and acts as an interfacial barrier layer for ions and water. Surface modifications were done in an in situ plasma cell with infrared reflection absorption spectroscopy (IRRAS). The zinc surface was first activated by an oxygen plasma to provide a freshly oxidised and contamination free oxide surface. The intermediate stages of the surface reactions could be revealed. Carbon dioxide molecules as oxidation products adsorbed on the growing zinc oxide and were desorbed at a later stage. An organosilicon plasma polymer was deposited directly on top of the oxide layer from a hexamethyldisilane (HMDS) plasma. Afterwards a cyclohexene (CHEX)/hexamethyldisilane co-plasma polymer was deposited. The top plasma polymer ...

Energy Technology Data Exchange (ETDEWEB)

Cold plasma nitriding treatment was performed to improve the corrosion resistance of C38 carbon steel. Nitriding process was conducted using a radiofrequency nitrogen plasma discharge for different times of treatment on non-heated substrates. The modification of the corrosion resistance characteristic of the C38 steel due to the treatment in acid medium (1 M HCl) were investigated by gravimetric and electrochemical tests such as potentiodynamic polarisation curves and electrochemical impedance spectroscopy (EIS). It was shown that the plasma nitriding treatment improves the corrosion resistance. Indeed, in the gravimetric tests, nitrided samples showed lower weight loss and lower corrosion rate in comparison to untreated one. In the Tafel polarisation tests, the nitrided samples showed greatly reduced corrosion current densities, anodic dissolution and also retarded the hydrogen evolution reaction. Using EIS method, an adequate structural model of the interface was used and the values ...

Energy Technology Data Exchange (ETDEWEB)

Surface analytical studies of high nitrogen austenitic stainless steels exposed to deaerated 0.1M HCl have revealed that nitrogen alloying additions influence the composition of salt layers and the passive film/alloy interface. In this study the authors employ electrochemical techniques and variable angle X-ray Photoelectron Spectroscopy (XPS) to examine the passive films formed on a series of austenitic stainless steels, Fe18Cr8Ni, Fe18Cr8Ni0.2N, Fe20Cr20Ni, Fe20Cr20Ni6Mo and Fe20Cr20Ni6Mo0.2N, in acidic chloride aqueous solution. In addition, several other model alloys, Fe19Cr, Fe19Cr9Ni, Fe19Cr2.5Mo, and Fe19Cr9Ni2.5Mo, were examined before and after electrochemical surface nitriding, a technique proven to have an effect analogous to N alloying. It was shown that nitrogen, nickel and molybdenum additions independently and in certain combinations stimulate selective dissolution of iron, resulting in a significant enrichment of chromium beneath the passive film. ...

Energy Technology Data Exchange (ETDEWEB)

Ceria (CeO{sub 2})-modified PtRu/C catalysts with different compositions of Ru and CeO{sub 2}, viz. PtRu{sub 0.9}(CeO{sub 2}){sub 0.1}/C, PtRu{sub 0.7}(CeO{sub 2}){sub 0.3}/C and PtRu{sub 0.5}(CeO{sub 2}){sub 0.5}/C and unmodified PtRu/C catalyst were synthesized by the sodium borohydride reduction method. Transmission electron microscopic results indicated that the lower concentrated CeO{sub 2}-modified PtRu/C catalysts had almost a similar morphological structure (well-dispersed particles with size around 2.3-2.5nm) with that of the unmodified PtRu/C catalyst. X-ray diffraction and X-ray photoelectron spectroscopy analyses indicated the formation of PtRu alloy and presence of CeO{sub 2} in an amorphous form with a mixed oxidation states (Ce{sup 3+}-Ce{sup 4+}). Electro-catalytic activity of these catalysts for methanol oxidation was investigated by linear sweep voltammetry and chronoamperometry and it was found that the PtRu{sub 0.7}(CeO{sub 2}){sub 0.3}/C ...

Energy Technology Data Exchange (ETDEWEB)

Electrodeposited Zn alloys with Fe group metals are known to be more resistant than pure Zn. However, the role of the corrosion products on the corrosion inhibition is not considered up to date. The aim of the present work was to examine the composition of corrosion products, which form on the Zn and Zn alloy surfaces under atmospheric corrosion conditions up to 3 year of exposure, trying to correlate it with the differences in their corrosion resistance. Zn corrosion products have been characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Corrosion film composition was determined to depend on the sample exposure she, as well on the coating type. During the initial exposure stages oxide film was found to be the principal reaction product (XPS data), which in marine station consists from hydroxide phase exceptionally, while in urban one, contain up to 6-12 % of oxide. Succeeding corrosion products (XRD data) in marine station consists ...