Science.gov (United States)

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

Energy Technology Data Exchange (ETDEWEB)

A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

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Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs solar cell on poly-Ge and to improve our ...

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...

Energy Technology Data Exchange (ETDEWEB)

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

International Nuclear Information System (INIS)

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga"+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).

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The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

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The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

Energy Technology Data Exchange (ETDEWEB)

This patent describes a method comprising applying a passivation layer of CaF{sub 2} to the surface of a superconductive ceramic oxide by evaporation. The CaF{sub 2} layer is effective to passivate the oxide surface without disrupting the superconductive properties.

International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

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The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been observed. At last has ...

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No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Research highlights: {yields} The polarization curve of 316L SS possesses five turning potentials in passive region. {yields} Films formed at turning potentials perform different electrochemical and semiconductor properties. {yields} Dissolutions and regenerations of passive film at turning potentials are obtained by AAS and XPS. {yields} Turning potentials appearing in passive region are ascribed to the changes of the compositions of the passive films. - Abstract: The passivity of 316L stainless steel in borate buffer solution has been investigated by Mott-Schottky, atomic absorption spectrometry (AAS) and X-ray photoelectron spectroscopy (XPS). The results indicate that the polarization curve in the passive region possesses several turning potentials (0 V{sub SCE}, 0.2 V{sub SCE}, 0.4 V{sub SCE}, 0.6 V{sub SCE} and 0.85 V{sub SCE}). The ...

International Nuclear Information System (INIS)

A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

Energy Technology Data Exchange (ETDEWEB)

Mott-Schottky (M-S) analysis is an effective approach to investigate the electronic property of passive films of metals, and it is well suitable for the passive film with single space charge capacitance. But there is no proper method to analyze the C{sub sc}{sup -2} vs. V{sub m} plots of passive films with several space charge capacitances in series connection, such as bipolar passive films. In this paper, the relationship between the space charge capacitance of the bipolar passive film and the applied potential was deduced and the features of corresponding plots were given out simultaneously. Accordingly, a non-linear fitting method was presented to analyze the C{sub sc}{sup -2} vs. V{sub m} plots of bipolar passive films. Then the method was used to study the semiconductor characteristics of bipolar passive films formed on the surface of ...

Energy Technology Data Exchange (ETDEWEB)

GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup 2}-area GaAs cell on ...

Science.gov (United States)

Direct coupljng between Al and Au metal]jzations can result in an increase in gate resistance due to a metallurgical reaction. (purple plague). An RF life test on ...

Energy Technology Data Exchange (ETDEWEB)

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. A proposed structure for the GaInAsP/Ge cascade cell is also given.

Energy Technology Data Exchange (ETDEWEB)

Passive films formed on Alloy 690 in different pH solutions at high temperatures were studied by potentiodynamic polarization, Auger electron spectroscopy, thermodynamic diagrams and the Mott-Schottky relation. The chemical compositions and electronic structures of the passive films were found to be strongly pH-dependent. In alkaline solutions, a secondary passivation was clearly observed on potentiodynamic polarization curves. The passive films were a mixture of Cr{sub 2}O{sub 3} and FeCr{sub 2}O{sub 4} below the flat band potential of nickel oxide and were NiFe{sub 2}O{sub 4} above this potential. Electronic structure models, describing the electrochemical properties of the passive films, are proposed and discussed.

Energy Technology Data Exchange (ETDEWEB)

Passive films formed on Alloy 690 in high-temperature alkaline environments were investigated by potentiodynamic polarization, X-ray photoelectron spectroscopy, transmission electron microscopy and Mott-Schottky approach. Passive current density and donor density of the passive films increase with increasing temperature, due to increased diffusion rates of metallic ions and dehydration of hydroxide phases. The passive films show a duplex structure including an inner layer of fine-grained Cr oxide or spinel oxide and an outer layer of Ni-Fe spinel oxide and Ni hydroxide. A growth model of the passive films on Alloy 690 in high-temperature alkaline environments is proposed and discussed.

Energy Technology Data Exchange (ETDEWEB)

In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

International Nuclear Information System (INIS)

Passivity of aluminum (Al) alloy 3003 in air and in aqueous solutions without and with chloride ions was characterized by electrochemical measurements, including cyclic polarization, electrochemical impedance spectroscopy (EIS), localized EIS and potential of zero charge, Mott-Schottky analysis and secondary ion mass spectroscopy (SIMS) technique. Stability, pitting susceptibility and repassivation ability of Al alloy 3003 under various film-forming conditions were determined. Results demonstrated that passive films formed on 3003 Al alloy in air and in Na2SO4 solution without and with NaCl addition show an n-type semiconductor in nature. The passive film formed in chloride-free solution is most stable, and that formed in chloride-containing solution is most unstable, with the film formed in air in between. Pitting of Al alloy 3003 passivated both in air and in aqueous solutions is inevitable in the ...

Energy Technology Data Exchange (ETDEWEB)

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H{sub 2}SO{sub 4} solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is ...

UK PubMed Central (United Kingdom)

Excised sheets of canine myocardium were subjected to cyclic loading and unloading in the predominant fibre and cross-fibre directions to determine passive mechanical properties. Myocardium under biaxial...Full Text Available

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Conference paper regarding research in freeze-protection methods that could extend market acceptance for passive solar domestic water heating systems in more northern climates if the U.S.

International Nuclear Information System (INIS)

The effects of #alpha# particle irradiation on a passive film formed on a 304 type stainless steel are studied in situ. The experimental arrangement minimizes the radiolysis effects due to the electrolyte. Under irradiation, a modification of the electronic structure of the oxide layers is revealed by photo-electrochemistry and impedance measurements. The influence of irradiation on the corrosion resistance of the passive film is investigated. Comparing the rest potential and the breakdown potential respectively under and without irradiation, a drop in the passivity range under irradiation is shown. this is interpreted as a decrease in the corrosion resistance. (author).

International Nuclear Information System (INIS)

... Sciences, Research Center for Radiation Protection, Chiba (Japan) Hafez,

International Nuclear Information System (INIS)

The effect of ion implantation on the aqueous corrosion resistance of Zr-4 in deaerated 1N H_2SO_4 was studied with the potentiokinetic technique. The Zr-4 alloy was bombarded with 5x10"1"4-2x10"1"6 Ar/cm"2 of 190 keV. It was found that the passive current density of Zr-4 decreases with increasing implantation dose. Photoelectrochemical results show that the ion implantation of Ar in Zr-4 raises the flatband potential of its passive film. AES was employed to analyze the surface of the passive film of Zr-4. The decrease in passive current density may be attributed to a thickening oxide layer on Zr-4 and a decrease in concentration of oxygen vacancies in its passive film. ((orig.)).

Energy Technology Data Exchange (ETDEWEB)

The pitting resistance of Fe-Cr and Fe-Cr-Mo alloys has been correlated with characteristics of the passive films analyzed by Auger electron spectroscopy (AES). Increased film protectiveness as a result of increased Cr in the alloy can be directly attributed to Cr enrichment of the film and decreased film thickness. Increased Mo in the alloy or passivation at noble potentials promotes passive film resistance to breakdown, but neither does much to change the macrocharacteristics of the film. Rather, it is suggested that the roles of alloying and/or passivation conditions are related to the susceptibility and distribution of weak points of the film. In solutions in which pitting occurs, chloride is generally not incorporated into the film, suggesting that the role of halides is to interact with weak points of the film at the solution/film interface. At 260/sup 0/C, the films are much thicker and likely to ...

International Nuclear Information System (INIS)

Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke ...

Energy Technology Data Exchange (ETDEWEB)

Passive films formed on Alloy UNS N06690 were investigated in simulated crevice chemistries. It was found the role of lead in corrosion processes is strongly dependent on the pH value of the testing solutions. At pH 1.5 the effect of lead is narrowly noticeable; while at pH 12.7, lead has a significant influence on the electrochemical performance of alloy UNS N06690. The lead alters the surface morphologies at both pH and account for higher hydroxide content in the surface film at pH 12.7. The lead incorporation hinders the formation of spinel oxides during the passivation in alkaline solution. Nanoindentation tests indicate a significant lead-induced degradation in the mechanical properties of passive films. The passivation degradation is attributed to detrimental effects of lead via interrupting the dehydration process and hindering the formation of protective layers on the alloy surface.

International Nuclear Information System (INIS)

The Advanced Test Reactor (ATR) at the Idaho National Engineering Laboratory was designed with some passive safety response attributes which contribute to the safety of the facility. The three passive safety attributes being evaluated in the paper are: 1) In-core and in-vessel natural convection cooling, 2) a passive heat sink capability of the ATR primary coolant system (PCS) for the transfer of decay power from the uninsulated piping to the confinement, and 3) gravity feed of emergency coolant makeup. The safety significance of the ATR passive safety response attributes is that the reactor can passively respond to most transients, given a reactor scram, to provide adequate decay power removal and a significant time for operator action should the normal active heat removal systems and their backup systems both fail. The ATR Interim Level 1 Probabilistic Risk Assessment (PRA) models ...

Energy Technology Data Exchange (ETDEWEB)

Thin passive films formed on highly corrosion-resistant type-312L stainless steel, containing 20 mass% chromium and 6 mass% molybdenum, in 2 mol dm{sup -3} HCl solution at 293 K have been analyzed by glow discharge optical emission spectroscopy (GDOES). The stainless steel does not suffer pitting corrosion even in this aggressive solution, showing a wide passive potential region. The depth profiles obtained clearly show a two-layer structure of the air-formed and passive films: an outer iron-rich layer and an inner layer highly enriched in chromium. Alloy-constituting molybdenum is deficient in the inner layer of the passive films and is enriched in the outer layer, particularly at the active dissolution potential. The molybdenum species in the outer layer may retard the active dissolution of stainless steel, promoting the formation of stable passive films highly enriched in ...

Energy Technology Data Exchange (ETDEWEB)

The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N {sub D}) for the passive film is of the order of 10{sup 21} cm{sup -3} and decreases with increasing formation time and potential, indicating that ...

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a ...

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An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for terrestrial as well as for space ...

CERN Document Server

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of approx 1nA and a ...

Energy Technology Data Exchange (ETDEWEB)

Several Mg-Y binary ribbons with Y content up to {approx}17.9 at.% were fabricated by melt-spinning. X-ray diffraction (XRD) revealed that the phase structure changes with increasing Y content from extended solid solution to partially amorphous, and then fully intermetallic Mg{sub 24}Y{sub 5}. Anodic potentiodynamic polarization performed in 0.01 M NaCl electrolyte (pH=12) revealed improved anodic passivity behavior compared to pure Mg for all the Mg-Y alloys. X-ray photoelectron spectroscopy (XPS) revealed that the improved passivity of Mg-Y was more related to the elemental oxidation state rather than the concentration of the surface components. To study the effect of Cl{sup -} ion on the passivity behavior, anodic potentiodynamic and potentiostatic polarization were performed on Mg-17.9 at.% Y in alkaline (pH=12) NaCl electrolytes containing Cl{sup -} ion in the concentration range from 0.00 to 0.50 M. The ...

Energy Technology Data Exchange (ETDEWEB)

The structure of hydroxylated oxide films (passive films) formed on Cr(110) in 0.5 M H{sub 2}SO{sub 4} at +0.35, +0.55, and +0.75 V/SHE has been investigated by in situ scanning tunneling microscopy (STM). Cathodic reduction pretreatments at {minus}0.54, {minus}0.64, and {minus}0.74 V/SHE destroy the well-defined topography of the single-crystal electrode and they have been excluded from the passivation procedure. Two different passive film structures have been observed, depending on the potential and time of passivation. At low potential (+0.35 V/SHE), the passive film, consisting mostly of chromium hydroxide, has a noncrystalline and granular structure whose roughness suggests local variations of thickness of ca. {+-} 0.5 nm. A similar structure is observed at higher potential (+0.55 V/SHE), but only for a short polarization time. For longer polarization at 0.55 V/SHE, and at ...

Science.gov (United States)

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

Energy Technology Data Exchange (ETDEWEB)

Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.

International Nuclear Information System (INIS)

Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected.

Energy Technology Data Exchange (ETDEWEB)

Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.

International Nuclear Information System (INIS)

Deep level effects in GaAs MOSFET have been characterised in the ohmic channel using DLTS, low frequency excess noise and dispersion technique. An isothermal multi exponential curve fitting method has been devised and implanted into the DLTS system. Multi exponential curve fitting method used to decompose a multi exponential transient into its constituents so that the peak signature can be better characterised for the case whereas several peaks are closely spaced. Low frequency excess noise and dispersion techniques also confirm the trap in signature of the same traps observed in the DLTS measurements. (author)

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

Energy Technology Data Exchange (ETDEWEB)

Research performed at the Lawrence Livermore National Laboratory on the equilibrium and stability of a new class of ambient-temperature passive bearing systems is described. The basic concepts involved are: (1) Stability of the rotating system is only achieved in the rotating state. That is, disengaging mechanical systems are used to insure stable levitation at rest (when Earnshaw`s theorem applies). (2) Stable levitation by passive magnetic elements can be achieved if the vector sum of the force derivatives of the several elements of the system is net negative (i.e. restoring) for axial, transverse, and tilt-type perturbations from equilibrium. To satisfy the requirements of (2) using only permanent magnet elements we have employed periodic ``Halbach arrays.`` These interact with passive inductive loaded circuits and act as stabilizers, with the primary forces arising from axially symmetric permanent-magnet elements. ...

Energy Technology Data Exchange (ETDEWEB)

The temperature effect on corrosion behaviors of PbCaSnCe alloy in 4.5 M H{sub 2}SO{sub 4} solution was investigated by using potentiodynamic curve, electrochemical impedance spectra (EIS), Mott-Schottky plot and photocurrent response methods. It was found that PbCaSnCe alloy was in passive state in sulfuric acid solution, a passive film can be formed on alloy surface. The compositions of passive films formed at 0.9 V for 2 h under different temperatures were detected by X-ray photoelectron spectroscopy (XPS). The results showed that the film resistance and the transfer resistance decreased with the increment of the solution temperature. Mott-Schottky analysis and the photocurrent response revealed that the passive film exhibited n-type semi-conductive character, the donor density of the passive film decreased with increasing the solution temperature. Photocurrent response revealed ...

Energy Technology Data Exchange (ETDEWEB)

Type 440C stainless steel is a high-C, high-Cr martensitic steel used in applications requiring high hardness and wear resistance in combination with moderate corrosion resistance. Typical applications include precision aerospace bearings and critical components in computer disk drives. The properties of passive films formed on 440C steel were investigated using advanced electrochemical techniques with a view to establishing a method to measure film stability directly in the passivation baths. Electrochemical measurements were sensitive to the passive film properties and were able to quantify the effect of cooling rate on passive film stability. The techniques used included linear polarization, AC impedance, small amplitude cyclic voltammetry, and coulostatic transient measurements. These provided results that exhibited excellent agreement with the AC impedance technique providing the most information ...

International Nuclear Information System (INIS)

The formation and breakdown of the passive films on stainless steels are mainly controlled by ionic and electronic transport processes. Both these processes are in part controlled by the electronic properties of the oxide film. Consequently, it is vital to gain a detailed perception of the electronic properties of the passive films together with structural and compositional information for a comprehensive understanding of mechanisms behind passivity and localised corrosion. As a step towards this goal the passive films formed on two main austenitic stainless steels AISI 316L and AISI 304L in borate solution were characterised by in situ Raman spectroscopy and photocurrent spectroscopy coupled with electrochemical measurements. This revealed the formation of an Fe-Cr spinel as the dominant constituent in the passive films with more Cr enrichment in the oxide film on 316L than that of ...

International Nuclear Information System (INIS)

The chemical properties of alloys in a given environment are to a large extent governed by the surface composition. Changes of the surface composition during passivation are important features in this respect. Previous studies of single crystal Ni-Mo alloys surfaces have been reported. The aim of this work was to obtain quantitative data, for the natural oxide and the passive films formed on Ni-6% Mo(100) and (110) alloys, using Rutherford backscattering spectroscopy and nuclear reaction analysis. (author).

Energy Technology Data Exchange (ETDEWEB)

Indoor radon is a potential health hazard for the general public, especially in buildings with poor ventilation. A variety of dosemeters have been developed and used in surveys of radon concentration measurements. In this article the passive dosemeters which are based on solid state nuclear track detectors are reviewed. The principle of passive dosimetry and the factors affecting their performance are discussed. The characteristics of SSNTD materials in relation to their behaviour under different environmental conditions are tabulated and discussed. Results of radon surveys from selected studies are also presented. (Author).

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The resistance to pitting of a Fe-17%Cr alloy in Cl[sup [minus

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The passive films formed on 316L stainless steel in various NaCl solutions have been investigated by capacitance measurements (Mott-Schottky). Pitting parameters have been determined using the galvano-kinetic polarisation method. The obtained results reveal the existence of a shallow and a deep donor level localised in the band gap of the semiconducting oxide film. These energy levels are due to iron ions in the tetrahedral and octahedral positions. It also appears that the participation of the deep donor level effects the electric field. The study developed allows us to compare characteristic parameters of the electronic structure of the passive film to those related to pitting susceptibility. (authors) 25 refs.

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P-implantation (10/sup 17/ ions cm/sup -2/, 40 KeV) into 304 stainless steel (ss) has been carried out, and an amorphous surface alloy was formed. Polarization studies in deaerated 1N H/sub 2/SO/sub 4/+ 2% NaCl showed that P-implantation improved both the general and localized corrosion resistance of 304 ss. A comparative study has been carried out between the implanted and unimplanted steel to determine what influence P-implantation has upon the properties of the passive film formed 1N H/sub 2/SO/sub 4/. The influence of Cl ions on pre-formed passive films was also studied. RHEED, XPS and AES were used to evaluate the nature of the passive films formed in these studies.

International Nuclear Information System (INIS)

Nickel ion radiation at 500 C was shown to have a strong effect on the surface electrochemistry and intergranular corrosion (IGC) of stainless steel (SS). Measured current densities in a 1 N sulfuric acid solution at room temperature were increased at active-passive, passive, and transpassive potentials. Radiation effects on the current decay behavior and susecptibility to IGC were similar for a fine-grained (FG) S alloy and for a very large-grained (LG) SS. Radiation-induced segregation (RIS) at the surface was believed to promote higher currents at short times, whereas segregation at grain boundaries was responsible for IG attack. Analytical electron microscopy (AEM) measurements revealed chromium and iron depletion plus Ni and silicon enrichment at grain boundaries in irradiated specimens. Si enhanced dissolution at transpassive potentials, whereas Cr depletion did the same at active-passive and ...

International Nuclear Information System (INIS)

The compositions of passive films formed on Fe-17Fr-13Ni (at. %) and Fe-18.5Cr-14Ni-1.5Mo (100) single crystals have been determined and the structure of the alloy under the film has been investigated. The alloys were passivated in 0.05M H_2SO_4 at 250 mV/SHE for 30 min. The oxygen content was measured by nuclear microanalysis using the "1"6O(d,p) "1"7O* reaction. The oxygen content in the passive film is similar for the two alloys and equal to (12#+-#2) 10"1"5 O/cm"2. The cationic compositions of the passive films have been determined by "4He channeling at two incident beam energies: 0.8 and 2.0 MeV. For the two alloys studied, a total cation content of (5#+-#2)10"1"5 at/cm"2 is found in the passive films. The corresponding thickness is about 12 A. There is an excess of oxygen, which can be attributed to the presence of hydroxyls and sulfate. A strong chromium enrichment is found ...

International Nuclear Information System (INIS)

English 1993 p. 161-163 China Zhu Rongbao Yang Liucheng Zhang

International Nuclear Information System (INIS)

The study of passive films formed on a nickel base alloy type Inconel 600 is performed by capacitance measurements (Mott-Schottky approach). This research is supported by the passivation study of the alloying elements Ni, Cr, Fe and high purity alloys Ni-Cr, Ni-Fe, Ni-Cr-Fe. The results obtained show that the capacitive behaviour of the Inconel 600 in the passive state is similar to that on a p-n heterojunction to which a barrier zone of nickel oxide is added. The individual or combined action of alloying elements on the development of this kind of electronic structure is discussed. (authors). 5 refs., 6 figs.

International Nuclear Information System (INIS)

A new polarized electron gun for use on the SLC at SLAC has been built and tested. It is a diode gun with a laser driven GaAs photocathode. It is designed to provide short (2ns) pulses of 10 A at 160 kV at 120 Hz. The design features of the gun and results from a testing program on a new and dedicated beam line are presented. Early results from operation on the SLC will also be shown.

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The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination ...

UK PubMed Central (United Kingdom)

An unusual S1-nuclease sensitive microsatellite (STMS) has been found in the single copy, rat polymeric immunoglobulin receptor gene (PIGR) terminal exon. In Fisher rats, elements within or beyond the...Full Text Available

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Austenitic stainless steels (304-type) have been implanted with nitrogen ions in order to investigate the effects of implanted nitrogen on their electrochemical behaviour and on the nature of the passive film formed on the steels in acid (0.5M H{sub 2}SO{sub 4}). Alloys with two nitrogen doses have been prepared (2.5x10{sup 16} and 2x10{sup 17} N atoms/cm{sup 2}). The implanted alloys have been characterized by {sup 15}N-NRA (nuclear reaction analysis) and XPS (X-ray photoelectron spectroscopy). Alloy surfaces with well-defined N concentrations were prepared, prior to the electrochemical measurements, by argon-ion sputtering of the implanted material for a fixed time in order to reach a well-defined point on the nitrogen depth profile. The samples were then transferred without exposure to air to an electrochemical cell mounted in an inert gas glove box. The implanted nitrogen modifies the electrochemical behaviour of the alloy. The anodic dissolution in the active ...

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One of the main disadvantages of solar air collectors in practical applications is their relatively low efficiency. In this experimental investigation, the shape and arrangement of absorber surfaces of the collectors were reorganized to provide better heat transfer surfaces suitable for the passive heat transfer augmentation techniques. The performance of such solar air collectors with staggered absorber sheets was tested. The experimental results show that it is possible to provide 10 to 25% enhancement in the efficiency compared to the conventional solar air collectors. (authors)

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Pitting corrosion is localized accelerated dissolution of metal that occurs as a result of a breakdown of the otherwise protective passive film on the metal surface. This paper provides an overview of the critical factors influencing the pitting corrosion of metals. The phenomenology of pitting corrosion is discussed, including the effects of alloy composition, environment, potential, and temperature. A summary is then given of studies that have focused on various stages of the pitting process, including breakdown of the passive film, metastable pitting, and pit growth. 120 refs.

International Nuclear Information System (INIS)

As an unconventional surface alloying process, ion implantation has been utilized to improve the active-passive behavior and the pitting resistance of martensitic M50 engineering alloy. In a field simulation study, Cr-implantation only at 150 kev to a fluence of 2 x 10"1"7 ions/cm"2 prevented pitting. The best pitting resistance of the steel was obtained with multiple implantations of Cr and Mo. The intermixing effect of high fluence P-implantation into 304 stainless produced an amorphous surface alloy. The removal of the grain boundaries and the uniformity of the resulting structure had a great influence on corrosion properties. REED analysis indicated that the anodic passive films formed on P-implanted 304 stainless steel at 250 mV (SCE) in 0.5M H_2SO_4 was amorphous. Phosphorus and boron were implanted into 316 stainless steel to study the passivity of 316 stainless. Electrochemical experiments were carried out to ...

Energy Technology Data Exchange (ETDEWEB)

The study by impedance and photoelectrochemical measurements of passive films formed on an AISI 304 type stainless steel shows that important parameters of the electronic structure of these films are modified under ..cap alpha.. irradiation, namely: width of the space charge region, donors concentration and diffusion length for minority carriers. The consequences of ..cap alpha.. irradiation on localized corrosion processes are discussed.

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A method for using in situ X-ray absorption near edge spectroscopy to determine the composition of passive, transpassive, and nonreducible thin oxide films is described. The method is demonstrated by determining the composition of the passive films formed in pH 4.5, 0.1 M acetate buffer, on 100 {angstrom} thick Fe-yCr alloys (y = 8.5, 15, 19, 23 atom %) at potentials: (1) low in the passive region ({minus}0.3 V vs. mercurous sulfate reference electrode, MSE); (2) high in the passive region; (3) in the transpassive region; and (4) in the cathodic region where the air-formed film is not fully reduced. The nonreducible film at {minus}1.2 V is entirely a Cr{sup 3+} oxide/hydroxide. This nonreducible film persists at anodic potentials. At {minus}0.3 V, the passive film on each alloy is significantly enriched in Cr. The film at {minus}0.3 V consists primarily of the nonreducible Cr{sup ...

International Nuclear Information System (INIS)

Passive dosimeters for personal and area radiation monitor in space have been developed mainly for dosimetry in low-earth-orbit (LEO) radiation environments of Space Shuttles and the International Space Station. The responses of several dosimeters have been evaluated by heavy ions and also its variation for individual dosimeter element. (author)

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In this study, the effects of 325nm wavelength ultraviolet light irradiation on pitting corrosion behavior of type 340 stainless steel in a neutral chloride solution are studied. Further, the change of passive film with the light irradiation is analyzed using x-ray photoelectron spectroscopy. The mains results obtained therefrom are stated below. Pitting potential can be shifted in noble direction by the ultraviolet light irradiation. The effect of ultraviolet light irradiation is ore prominent in the pitting corrosion process than that in the passive film formation. The result of the analysis in terms of the birth and death stochastic probability process shows that pitting corrosion rate is decreased remarkably by the ultraviolet light irradiation at the formation of passive film, while the repassivation is slightly expedited by the ultraviolet light irradiation. On the other hand, the repassivation rate is increased a ...

International Nuclear Information System (INIS)

The possible surface enrichment of chromium and molybdenum during dissolution of Fe18Cr (110) and Fe18Cr3Mo (110) alloys at constant potentials in the passive region is elucidated by taking into account quantitative information on partial dissolution rates of alloy components as measured by #gamma#-spectrometry and on chemical composition of passivating films as measured by ESCA and AES. When combining results from all methods it is found that chromium under all conditions is enriched in the passivating films. An accumulation of chromium in the alloy is also indicated. For molybdenum, an enrichment in the passive film is observed at -0.2 V (SCE), whereas in the potential interval 0.1 - 0.9 V, the molybdenum enrichment as determined by ESCA and AES is hardly significant. On the other hand, #gamma#-spectrometry gives a clear indication of molybdenum enrichment in both potential. (author).

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The pitting behavior of Alloy 800 was investigated as a function of temperature and prefilming in high temperature water. The pitting behavior was characterized in terms of the pitting potential and the pit density. The pitting potential decreases with increasing temperature and chloride activity. Prefilming of test coupons over a time period between 100 and 5,000 hours in ammoniated water at 300 C has no apparent influence on the pitting potential at room temperature, 180 C and 300 C. However, the number of pits in prefilmed coupons is much higher than in coupons covered with an air passive layer. The effect of prefilming on pit nucleation was investigated in more detail with regard to a model and test methods developed by Bianchi and co-workers. Density of pits in prefilmed coupons is at least one order of magnitude higher than in air passive coupons. Maximum pit density was measured after a prefilming period of 1 00 hours. The effect is ...

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The task of selecting reliable computer programs to simulate the performance of passive solar buildings has been assigned by the CEC to a specialized sub-group, the Modelling Sub-Group. This group has selected a detailed program for large computers, which has been commissioned and run by each participant. It has also given a reference for the analysis of a set of simple models, i.e. for mini/micro computers, pocket calculators and manual methods. These simulation techniques have been analyzed by answering an original questionnaire, making test runs of the models with building and climatic data, and comparing the results obtained with the large program. The best manual method has been included in the Passive Solar Handbook prepared by the Passive Solar Working Group. The MSG has also established a comparative table of all the selected simplified models, in order to make the designer able to do a first selection among them, ...

Science.gov (United States)

III--V based devices such as field effect transistors, heterojunction bipolar transistors, and lasers often have surface leakage and thermal degradation problems due to surface states which pin the Fermi level to the midgap. Sulfur based passivation processes are known to improve device performance by altering surface-state densities. We have developed a voltage-controlled anodic sulfur passivation scheme using Na[sub 2]S dissolved in ethylene glycol. Our process has repeatedly produced a [similar to]25% improvement in peak output power near the catastrophic damage limit in visible ([lambda]=670 nm) AlGaInP edge-emitting lasers. The threshold current density before and after passivation, and the [ital I]--[ital V] characteristics before and after catastrophic failure, were essentially unchanged indicating that passivation raises the threshold for facet damage.

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack ...

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X-ray photoelectron spectroscopy and ex situ scanning tunneling microscopy measurements have been combined to investigate the thickness, the chemical composition, and the structure of passive films formed in 0.5 M H{sub 2}SO{sub 4} on Fe-22Cr(110). Aging under polarization at +500 mV/SHE causes a dehydration (anodic) reaction of the outer chromium hydroxide layer of the passive film. This anodic reaction results in a thickening of the inner mixed Cr(III) and Fe(III) oxide layer enriched in Cr{sub 2}O{sub 3}. It also causes a coalescence of the oxide nuclei of the passive film and a crystallization of the inner Cr{sub 2}O{sub 3}. It also causes a coalescence of the oxide nuclei of the passive film and a crystallization of the inner Cr{sub 2}O{sub 3} oxide layer in epitaxy with the substrate. The epitaxial relationship is {alpha}-Cr{sub 2}O{sub 3}(0001) {parallel} Fe-22Cr(110) with three different ...

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Alloy 600 is used as a material for steam generator tubing in pressurized water reactors(PWR) due to its high corrosion resistance under PWR environment. In spite of its corrosion resistance, stress corrosion cracking(SCC) has occurred on the primary side as well as the secondary side of the tubing. Oxide on steel surfaces in aqueous solution above 100 .deg. C is composed of duplex film structure. Inner layer of the oxide is dense and less porous, which is formed by growth of oxide layer on metal surface. Outer layer of the oxide is loose adhesive, which is formed by dissolution precipitation mechanism. Growth processes occur at the metal/oxide and oxide/electrolyte interfaces and are controlled by transport of the layer forming species through the layer, i.e. by the inward diffusion of oxygen including electrolyte species and the outward diffusion of metal cations. Understanding of basic electrochemical behaviors about anodic dissolution and passivation of bare ...

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Pitting corrosion and trans-passive dissolution of 316 stainless steel in solution containing five percent of commercial bleaching liquid was investigated by employing potentiodynamic polarization method and recording corrosion potential during immersion. Today commercial bleaching liquids are widely used as cleaner additives, therefore, those house appliances made from stainless steels are in contact with aqueous solution containing bleaching liquid. This may cause sever localized corrosion and trans-passive dissolution. In order to investigate the possibility of trans-passive dissolution of stainless steel by bleaching liquid, potentiodynamic polarization and recording variation of corrosion potential of specimens were carried out in 0.2 M Na{sub 2}SO{sub 4} solution containing 5 %wt. commercial bleaching liquid. A 500 mV drop in trans-passive potential and also instantaneously ennobling corrosion ...

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III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article ...

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe how this concept ...

International Nuclear Information System (INIS)

Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 #mu#m was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from ...

International Nuclear Information System (INIS)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K_#alpha# X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K_#alpha# X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the conditions necessary for ...

Science.gov (United States)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al{sub {ital x}}Ga{sub 1{minus}{ital x}}InP{sub 2}; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. {copyright} {ital 1996 The American Physical Society.}

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The temperature dependence of the spontaneous magnetization of epitaxial iron films with a thickness ranging from d=20 to 200nm has been measured. The films are grown on GaAs (100) substrates which are covered by a 150nm thick silver (100) buffer layer. For three-dimensional BCC iron it was observed already in 1929 that saturation of the spontaneous magnetization for T->0 is perfectly described by a T{sup 2} power law. On the other hand, for thin two-dimensional (2D) iron films a T{sup 3/2} law has been established in many recent experimental investigations. In our iron films grown on diamagnetic silver, this dimensionality change occurs at a thickness between d=100 and 200nm. Comparison of the here-observed T{sup 3/2} coefficients with those on iron films grown on paramagnetic tungsten (110) shows that the 2D interactions are {approx}20 times larger in the films on tungsten. Recent results on Fe films which are grown directly on GaAs ...

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A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

International Nuclear Information System (INIS)

Passive films, formed on annealed and cold worked AISI 304 stainless steel in hot chloride media, were examined using polarization resistance and impedance measurements. The obtained results show the influence of cold work on film conductivity, which can be correlated to conditions of susceptibility to stress corrosion cracking. Capacitance measurements, using the Mott-Schottky approach, revealed that a change from n to p type semi-conductivity is associated to susceptible conditions with an increase in the doping density estimated for cold worked samples in the presence of chloride. It is assumed that p-type semi-conductivity of the passive film together with the position of the flat band potential has a strong influence on the dissolution processes at the corrosion potential. Based on this analysis the influence of plastic deformation, at the dislocation scale, is discussed. (authors)

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Red mud suspensions are studied as passivating agents for iron in alkaline chloride media. Red mud particles in alkaline media are negatively charged, and can absorb considerable amounts of protons without significant changes in pH. These particles adhere easily to an iron surface forming aggregates of heterogeneous shape, smaller than 10 {mu}mx10 {mu}m. These adhered particles recrystallise on potential cycling, and hinder metal dissolution and magnetite formation. Carbon steel samples passivated in red mud suspensions become resistant to corrosion in alkaline chloride media. Corrosion potential versus time records and impedance spectroscopy measurements allow formulating some hypotheses about the inhibiting mechanism.

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Thin passive layers of uranium nitride were formed by nitriding pure metallic uranium in non-equilibrium, low pressure radio-frequency plasma of nitrogen. Plasma nitriding at low substrate temperature of 230 C-250 C was found to cause the formation of adherent layers of uranium sesquinitride ({alpha}-U{sub 2}N{sub 3}) which provide a considerable protection against hydrogen attack. The characteristics of these passivation layers were determined by X-ray diffraction and Auger electron spectroscopy. The incipient hydriding kinetics of the plasma-treated samples were compared with those of untreated and nitrogen-ion implantation ones, utilizing a hot-stage microscope that was monitored continuously with a TV camera and videotape. (orig.)

International Nuclear Information System (INIS)

The effect of surface treatment on the characteristics of the passive film on a super duplex stainless steel is addressed. Auger Electron Spectroscopy (AES) has been used to provide in-depth chemical profile analyses of the passivation film. This study showed that the constitution of the film is largely dependent on the electrolytic conditions under which it is produced or to which it is submitted. The passive films formed by polarisation in an alkaline solution (boric-borate solution) consist of two regions, an inner region rich in chromium and an outer region rich in iron, whilst the films produced in acid solution only present the chromium - rich region. The film thickness is also greatly affected by the polarisation conditions. It can vary from ca. 8 monolayers to about 20 monolayers for cathodically and anodically polarised specimens respectively. The microstructure of weldmetal is also discussed. (author)

International Nuclear Information System (INIS)

In this work passive films formed in AISI 304 stainless steel were envisaged as semiconductors and studied by means of photoelectrochemistry and Mott-Schottky plots. The passive films were potentiostatically formed at different potentials (0.2-0.8V) in a basic borate/boric acid solution without and with addition of NaCl (0.5 and 1g/l) and at various temperatures in the range 8-60"oC. The influence of these parameters on the photocurrent, quantum efficiency, bandgap energy and density of charge carriers was determined. The results show that the experimental conditions at which the films are formed influence the semiconductive properties of the film, which seem to be related to the higher or lower stability of the film. An Arrhenius type of relationship was also found between the density of charge carriers and temperature, leading to the determination of an activation energy. (author) 13 refs., 7 figs.

Energy Technology Data Exchange (ETDEWEB)

A review is given of the state-of-the-art of single and polycrystalline solar cells, which includes a short theoretical review, laboratory achievements, and production methods. The Si single and polycrystalline cell and the amorphous Si cell are described, including material preparation, crystal and sheet growth, and cell and panel production. Promising second generation thin film solar cells including GaAs, CdS(CuInSe/sub 2/), and CdTe are briefly described. Economical aspects are discussed.

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A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

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We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

Science.gov (United States)

In an earlier paper (Phys. Rev. Lett. 66, 41 (1991)), we calculated both the dielectric constant ({epsilon}{sub {infinity}}) and the nonlinear optical susceptibilities for second-harmonic generation ({chi}{sup (2)}) in the static limit for AlP, AlAs, GaP, and GaAs in the local-density approximation with and without a self-energy correction in the form of a scissors operator,'' including local-field effects. In this paper, we expand our presentation of this calculation. Agreement with experiment to within 15% for the nonlinear susceptibility is demonstrated where experiments are available (GaP and GaAs); the dielectric constants are in no worse than 4% agreement with experiment. The virtual hole'' contributions are reformulated to avoid large numerical cancellations in the case of near degeneracies. The virtual electron'' terms dominate over the virtual hole'' terms ...

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This thesis details the first direct ultrafast measurements of the dynamic thermal expansion of a surface and the temperature dependent surface thermal diffusivity using a two-color reflection transient grating technique. Studies were performed on p-type, n-type, and undoped GaAs(100) samples over a wide range of temperatures. By utilizing a 90 fs ultraviolet probe with visible excitation beams, the effects of interband saturation and carrier dynamics become negligible; thus lattice expansion due to heating and subsequent contraction caused by cooling provided the dominant influence on the probe. At room temperature a rise due to thermal expansion was observed, corresponding to a maximum net displacement of {approximately} 1 {Angstrom} at 32 ps. The diffracted signal was composed of two components, thermal expansion of the surface and heat flow away from the surface, thus allowing a determination of the rate of expansion as well as the surface thermal diffusivity, ...

International Nuclear Information System (INIS)

Austenitic stainless steels have been implanted with molybdenum ions (Mo"+, 100 keV, 2.5 x 10"1"6 atoms cm"-"2). The implanted material has been characterized by XPS and RBS. The implanted region has a thickness of #approx# 1000 A with a maximum molybdenum concentration of #approx# 9 at.% Mo located at #approx# 210 A from the surface. The effects of implanted molybdenum on the passivation of the alloy in 0.5 M H_2SO_4 have been investigated by electrochemistry and XPS. After XPS analysis the samples were transferred without exposure to air into a glove-box with an inert atmosphere. The electrochemical behaviour of the alloy is significantly modified by the implanted molybdenum. The major effect is that the activation peak disappears. A bilayer structure (outer hydroxide/inner oxide) of the passive film is observed for both the implanted and non-implanted alloys and the thicknesses of the films are similar. On the implanted alloy the outer ...

International Nuclear Information System (INIS)

The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO_2-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also decreases the doping density ...

Energy Technology Data Exchange (ETDEWEB)

Passive films, formed on annealed and cold worked AISI 304 stainless steel in hot chloride media, were examined using polarization resistance and impedance measurements. The obtained results show the influence of cold work on film conductivity, which can be correlated to conditions of susceptibility to stress corrosion cracking. Capacitance measurements, using the Mott-Schottky approach, revealed that a change from n to p type semi-conductivity is associated to susceptible conditions with an increase in the doping density estimated for cold worked samples in the presence of chloride. It is assumed that p-type semi-conductivity of the passive film together with the position of the flat band potential has a strong influence on the dissolution processes at the corrosion potential. Based on this analysis the influence of plastic deformation, at the dislocation scale, is discussed. (authors)

Energy Technology Data Exchange (ETDEWEB)

The possibility has been explored of using a laser scattering technique to detect the imminent onset of rock activity associated with gas outbursts. The instrument described in this paper provides a sensitive, remote and rapid means of passively monitoring micro-seismic activity at the exposed face.

UK PubMed Central (United Kingdom)

Few diseases exemplify the integration of research from bench to bedside as well as neonatal lupus, often referred to as a model of passively acquired autoimmunity. In essence, this disease encompasses...Full Text Available

Science.gov (United States)

Contents: Energy Use; Building Fabric Performance; Ventilation and Infiltration; Passive Solar Design; Heating Systems and Controls; Hot and Cold Water Provision; and Lighting and Electrical Appliances.

Energy Technology Data Exchange (ETDEWEB)

Described herein are effects of nitrogen dissolved in steel on passivity and pitting corrosion, as one of the major corrosion phenomena observed in stainless steel. Mechanisms involved in controlling pitting corrosion by nitrogen are also discussed. Nitrogen contained in austenic stainless steel is concentrated in the surface area, in particular in the vicinity of the interface between the passive film and metal matrix. Nitrogen tends to decrease critical current density in an acid, when it is added to steel of high critical current density (approximately 1mA/cm{sup 2} or higher). This phenomenon is considered to result from accumulation of nitrogen preferentially in the surface area to prevent dissolution of steel. Nitrogen dissolved in the austenic phase improves resistance of the steel to pitting corrosion. This phenomenon is considered to result from controlled decrease in pH level during the initial stage of pitting corrosion, ...

International Nuclear Information System (INIS)

Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.

Energy Technology Data Exchange (ETDEWEB)

The primary scope of this study is to establish the analysis technology for the advanced reactor designed on the basis of the passive and inherent safety concepts. This study is extended to the application of these technology to the safety analysis of the passive reactor. The study was performed for the small and medium sized reactor and the large sized reactor by focusing on the development of the analysis technology for the passive components. Among the identified concepts the once-through steam generator, the natural circulation of the integral reactor, heat pipe for containment cooling, and hydraulic valve were selected as the high priority items to be developed and the related studies are being performed for these items. For the large sized passive reactor, the study plans to extend the applicability of the best estimate computer code RELAP5/MOD3 which is widely used for the safety analyses of the ...

Science.gov (United States)

properties such as effective particle size, thermody- namic phase (water, ice), cloud-top properties ...... Green, R.O., and J.E. Conel, 1995: Movement of ..... vertical hydrometeor profiles from passive micro- wave sensors. IEEE Trans. ...

Energy Technology Data Exchange (ETDEWEB)

This invention pertains to passivation-free solid-state rechargeable batteries composed of Li.sub.4 Ti.sub.5 O.sub.12 anode, a solid polymer electrolyte and a high voltage cathode. The solid polymer electrolyte comprises a polymer host, such as polyacrylonitrile, poly(vinyl chloride), poly(vinyl sulfone), and poly(vinylidene fluoride), plasticized by a solution of a Li salt in an organic solvent. The high voltage cathode includes LiMn.sub.2 O.sub.4, LiCoO.sub.2, LiNiO.sub.2 and LiV.sub.2 O.sub.5 and their derivatives.

Energy Technology Data Exchange (ETDEWEB)

Neutron spectra measured in the FFTF In-Reactor Thimble (IRT) by proton recoil proportional counters, proton recoil emulsions, and passive dosimeters have been evaluated and compared with each other and with three-dimensionl diffusion theory calculated spectra for the purpose of validating the passive dosimeter spectrum adjustment technique. The least squares data adjustment code, FERRET, was used to combine measured reaction rates, calculated spectra, and dosimeter cross sections, resulting in adjusted spectra and cross sections with uncertainties and correlations that properly account for uncertainties and correlations on the input parameters.

Energy Technology Data Exchange (ETDEWEB)

We report on multijunction GaInP/GaAs photovoltaic cells with total-area efficiencies of 29.5% at one-sun concentration and air mass (AM) 1.5 global and 25.7% one-sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed: the grid design, front surface passivation of the top cell, and bottom surface passivation of both cells. Aspects of cell design related to its operation under different solar spectra and under concentration are also discussed.

International Nuclear Information System (INIS)

This paper reports several design options for improved passive circulation flow investigated for use in small, modular liquid metal cooled reactors (LMRs). The purpose is to enhance the transition to natural convection cooling following loss of forced circulation flow, reducing thermal transients experienced by the fuel and possibly eliminating the need for emergency pony-motor flow. Design details to minimize pressure drops may also enhance maximum equilibrium power levels possible under natural circulation only.

Energy Technology Data Exchange (ETDEWEB)

A passive integrating radon dosemeter is described. The radon dosemeter is based on radon adsorption on activated charcoal. By placing TLD crystals inside an open charcoal container, the beta radiation from radon daughters, produced by the decay of adsorbed radon, is detected continuously during the exposure time. After closing the container, radiation will still be detected by the TLD crystal. Calibration procedures are reported and the suitability of the dosemeter is discussed. The dosemeter proved to be suitable for measurements during periods from a few days to two weeks both in domestic and mine atmospheres.

CERN Document Server

We report on the design, fabrication and testing of two superconducting passive microwave components, a quadrature hybrid and a 20 dB directional coupler. These components are designed to be integrated with superconducting qubits or Josephson parametric amplifiers and used in quantum information processing applications. For the coupler, we measure return loss and isolation > 20 dB, and insertion loss 20 dB and insertion loss < 0.3 dB in a 10% band around 6.5 GHz. These values are within the design specifications of our application; however, we find a 7% difference between the designed and measured center frequency for the hybrid.

International Nuclear Information System (INIS)

Heat transfer augmentation has developed into a major specialty area in heat transfer research and development. A bibliography of world literature on augmentation is presented. The literature is classified into passive augmentation techniques, which require no external power, and active techniques, which do require external power. The fourteen techniques are grouped in terms of their application to the various modes of heat transfer. Mass transfer is included for completeness. Key words are included with each citation for technique/mode identification. The total number of publications cited is 1,967, including 75 surveys of various techniques and 42 papers on performance evaluation of passive techniques. Patents are not included as they will be the subject of a future topical report.

Energy Technology Data Exchange (ETDEWEB)

Cyclic voltammograms of SUS 304 stainless steel in various neutral solutions such as Na/sub 2/SO/sub 4/ at high temperature were measured, as a successive study to previous report in which effects of temperature and pH on polarization behavior of stainless steel were studied. In this measurement Ag/AgCl reference electrode and platinum counter electrode were used in a static autoclave lined with inconel. Passive films formed in various conditions were analysed by electron diffraction and Auger spectroscopy. Results obtained were compared with anodic behavior of iron, chromium and nickel and with thermodynamical stabilities of their compounds. The main results are summarized as follows. (1) Stainless steel shows such electrochemical behavior as active dissolution, passivation and transpassivation in a deaerated neutral solution at 250/sup 0/C after fully reductive treatment of the specimen. In air-saturated solution, the peak of active ...

Energy Technology Data Exchange (ETDEWEB)

The potentiodynamic polarization measurement of 254SMO stainless steel (UNS 31254) was conducted in 3.5% NaCl solutions with pH ranging from 0.1 to 5. The results indicated that this stainless steel offered excellent pitting corrosion resistance in corrosive environments. Further, it also exhibited various features on the polarization curves in different pH solutions. The electrochemical constant-potential passivation treatment performed at different pH followed by XPS analysis revealed that the primary constituents of the outermost layer of the passive films formed in the weak (pH 5) and strong (pH 0.8) acid solutions are iron oxides and Cr{sub 2}O{sub 3} and Cr(OH){sub 3}, respectively. Molybdenum oxides, primarily in the six-valence state, existed in the outermost layer of the passive film. Only very weak signals corresponding to that of nickel oxides were detected in the film formed in the weak acid (pH 5) solution. The ...

Energy Technology Data Exchange (ETDEWEB)

Alloy 600 is commonly used in the primary systems of PWR plants because of its excellent resistance to a stress corrosion cracking and pitting. But a stress corrosion cracking and pitting corrosion are occasionally observed under PWR conditions, which may be correlated with the passive film on the Alloy 600 surface. There is little information on the composition of films growing on the surface of Alloy 600 at high temperature. Therefore, an understanding of the basic electrochemical behaviors about an anodic dissolution and the passivation of the bare surface of metals and alloys provides important information about localized corrosions like a SCC and pitting. Oxide on the steel surfaces in an aqueous solution above 100 .deg. C is composed of a duplex film structure. The inner layer of the oxide is dense and less porous, which is formed by a growth of the oxide layer on the metal surface. Outer layer of the oxide is less adhesive, which is ...

Energy Technology Data Exchange (ETDEWEB)

The five thermal-hydraulic concepts chosen for conceptual study of advanced PWR systems have been studied as follows: (1) Critical Heat Flux in passive PWR Conditions: review of previous works (various of correlations, analysis of parametric trends) on CHF, assessment and improvement of CHF prediction models for round tubes, development of the prediction model on bundle CHF with considering the correction factor calculated from the tube data base, design and construction of the intermediate-pressure CHF experimental loop, extension of CHF data base by performing the experiments at low-flow, and low-quality conditions (2) Passive Cooling Concepts for Concrete Containment Systems: Selection of the external condenser by comparing and reviewing between passive cooling concepts for concrete containment system concepts, survey and review of previous studies (theoretical mechanism of condensation heat transfer and effect of ...

Energy Technology Data Exchange (ETDEWEB)

We studied whether plasma-etching techniques can use standard screen-printed gridlines as etch masks to form self-aligned, patterned-emitter profiles on multicrystalline-silicon (mc-Si) cells from Solarex. We conducted an investigation of plasma deposition and etching processes on full-size mc-Si cells processed in commercial production lines, so that any improvements obtained would be immediately relevant to the PV industry. This investigation determined that reactive ion etching (RIE) is compatible with using standard, commercial, screen-printed gridlines as etch masks to form self-aligned, selectively doped emitter profiles. This process results in reduced gridline contact resistance when followed by plasma-enhanced chemical vapor deposition (PECVD) treatments, an undamaged emitter surface easily passivated by plasma-nitride, and a less heavily doped emitter between gridlines for reduced emitter recombination. This allows for heavier doping beneath the gridlines ...

International Nuclear Information System (INIS)

The corrosion and passivation behaviour of bulk polycrystalline martensite Ni50Mn30Ga20 and austenite Ni48Mn30Ga22 alloys was compared in electrolytes with different pH values. Linear anodic and cyclic potentiodynamic polarisation methods and anodic current transient measurements have been conducted for the alloys and their constituents to analyze free corrosion, anodic dissolution and passive layer formation processes. Electrochemically treated alloy surfaces were characterized with scanning electron microscopy (SEM) and angle-resolved x-ray photoelectron spectroscopy (XPS). The electrochemical response of both alloys is in principal similar and is dominated by the Ni oxidation. In acidic solutions (pH 0.5 and 5) a slightly higher reactivity is detectable for the martensitic alloy which is mainly attributed to enhanced dissolution processes at the multiple twin boundaries. In weakly acidic to strongly alkaline solutions (pH 5-11) both alloys ...

Energy Technology Data Exchange (ETDEWEB)

Surface analytical studies of high nitrogen austenitic stainless steels exposed to deaerated 0.1M HCl have revealed that nitrogen alloying additions influence the composition of salt layers and the passive film/alloy interface. In this study the authors employ electrochemical techniques and variable angle X-ray Photoelectron Spectroscopy (XPS) to examine the passive films formed on a series of austenitic stainless steels, Fe18Cr8Ni, Fe18Cr8Ni0.2N, Fe20Cr20Ni, Fe20Cr20Ni6Mo and Fe20Cr20Ni6Mo0.2N, in acidic chloride aqueous solution. In addition, several other model alloys, Fe19Cr, Fe19Cr9Ni, Fe19Cr2.5Mo, and Fe19Cr9Ni2.5Mo, were examined before and after electrochemical surface nitriding, a technique proven to have an effect analogous to N alloying. It was shown that nitrogen, nickel and molybdenum additions independently and in certain combinations stimulate selective dissolution of iron, resulting in a significant enrichment of chromium ...

Energy Technology Data Exchange (ETDEWEB)

The competitiveness of a new nuclear plant vs. a new oil or gas fired combined cycle plant or a coal fired plant in East-Asia, is reviewed in the paper. Both the nuclear and the fossil fired plants are evaluated as either utility financed or independent power producer (IPP) financed. Two types of advanced light water reactors (ALWRs) are considered in this paper, namely evolutionary ALWRs (1200 MWe size) and passive ALWRs (600 MWe class). A range of capital and total generation costs for each plant type is reported here. The comparison centers on three elements of overall competitiveness: generation costs, hard currency requirements, and employment requirements. Each of these aspects is considered perspective. Year-by-Year generation cost history over the plant lifetime is shown in some cases. It is found here that a utility financed evolutionary and passive ALWRs are broadly competitive with an IPP financed gas fired combined cycle plant and ...

Energy Technology Data Exchange (ETDEWEB)

The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The current status of non-silicon photovoltaic solar cells is discussed including the identification of current technical and economic issues and future research directions for potential high efficiency low cost technologies. This review covers such advanced materials as CdS/Cu/sub 2/S, CdS/CuInSe/sub 2/, and GaAs homojunction and heterojunction devices; such emerging materials as InP, Zn/sub 3/P/sub 2/ and CdTe; and liquid junction electrochemical photovoltaic cells. An attempt is made to compare the current relative status of these various technologies and to indicate their near term potential where possible. 105 refs.

International Nuclear Information System (INIS)

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

International Nuclear Information System (INIS)

The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.

British Library Electronic Table of Contents (United Kingdom)

Within the framework of the effective-mass approximation, using a variational method, we have calculated the effect of intense laser radiation on the binding energy of the shallow-donor impurities in a Ga1- x In x N y As1- y /GaAs single quantum well for different nitrogen and indium mole concentrations. Our numerical results show that the binding energy strongly depends on the laser intensity and frequency (via the laser dressing parameter) and it also depends on the nitrogen and indium concentrations. Impurity binding energy under intense laser fields can be tuned by changing the nitrogen and indium mole fraction.

Science.gov (United States)

A general model for the analysis of metal-semiconductor solar cells is presented. The model takes into account the cell optical properties, carrier recombination effects, semiconductor minority-carrier properties, series resistance, cell thickness, and active surface area. Numerical methods are used to solve the appropriate continuity equations and hence compute the photocurrent density under AMO conditions. The operation of the model is demonstrated using p- and n-type Si and GaAs with Au being taken as the barrier metal. Calculations are presented showing the effect on solar energy conversion efficiency of surface recombination velocity, barrier height, minority-carrier lifetime, barrier metal thickness, collecting grid configuration, and cell thickness. A comparison of practical and computed data for the Au/n-GaAs system yields good agreement. (AIP)

Energy Technology Data Exchange (ETDEWEB)

The effect of temperature (60-280{sup o}C) on the properties of the oxide films formed on Alloy 800 in 0.1 M NaCl and 0.1 M Na{sub 2}SO{sub 4} aqueous solutions was studied by in situ AC impedance spectroscopy and polarization in the Fe(CN{sub 6}){sup -3}/Fe(CN){sub 6}{sup -4} redox system. The anodic behavior under the same experimental conditions was examined by potentiodynamic polarization techniques. In both solutions the passive film was found to become more porous, and hence less protective, with increasing temperature. However, at temperatures above 150{sup o}C, the loss of film protectiveness is more pronounced in chloride solutions, in which pitting occurs. Pitting morphology was found to be strongly temperature dependent: isolated and deep pits were found up to 200{sup o}C whereas at higher temperatures a broad, shallow and more generalized type of attack was detected. No effect of temperature on the defect structure of the semiconductor oxide film was ...

Energy Technology Data Exchange (ETDEWEB)

The German voluntary standard 'Passivhaus' (passive house) leads to buildings with practically no energy consumption. The first residential buildings of this type were built in 1998 and the first tertiary buildings in 2000. Such a passive house must fulfill 5 efficiency criteria: annual space heating needs {<=} 15 kWh/m{sup 2}, U{sub v} envelope coefficient lower than 0.15 W/(m{sup 2}.K), U{sub v} of openings lower than 0.8 W/(m{sup 2}.K), airtightness {<=} 0.6 volume/hour, and total energy needs (space heating, hot water, ventilation, lighting and domestic uses) measured at the meter lower than 42 kWh/m{sup 2}.year. This article makes a status of the effective efficiency of existing passive buildings both in the residential and tertiary sectors and presents some possible ways of improvement. (J.S.)

Energy Technology Data Exchange (ETDEWEB)

A theoretical model, which describes subband gap photoexcitation involving localized electronic states, was developed. The escape probability of a charge carrier trapped in a localized state is considered via Poole-Frenkel, direct tunneling, or phonon-assisted tunneling processes, as competing escape mechanisms. Photoelectrochemical experiments were performed on the passive films formed on zirconium and amorphous iron-zirconium alloys and on pure HfO/sub 2/ films and HfO/sub 2/ films implanted with varying concentrations of xenon. These films were found to possess some degree of disorder depending on the substrate, the thickness of the film, and the extent of implantation. The spectral dependence of the photocurrent in all of the films studied is considerably different from what was found for crystalline passive films. The potential dependence of the photocurrent yields Poole-Frenkel behavior. Reverse tunneling processes were also observed at ...

Science.gov (United States)

Certain materials, especially Sn, passivate the rare earth-exchanged Y zeolite (REY) used in petrochemical fluid-cracking catalysts against vanadium degradation caused by V impurities in the feed oil. The mechanism of passivation was investigated here from the standpoint of high-temperature oxide acid-base reaction; i.e., where the controlling factors were considered to be Lewis acid-base reactions between V{sub 2}O{sub 5}, the RE oxides, SnO{sub 2}, etc. Molten salt tests at 680{degree}C showed SnO{sub 2}, presumably because of its acidic nature, to be essentially nonreactive with V{sub 2}O{sub 5} or Na{sub 2}O-V{sub 2}O{sub 5} compounds. A hypothesis was developed to explain how the passivation effect by Sn might result from the unique resistivity of SnO{sub 2} to reaction with V{sub 2}O{sub 5}.

Energy Technology Data Exchange (ETDEWEB)

In the present paper, the chemical composition of passive films formed on both phases of two types of duplex stainless steels (UNS S31803 and UNS S32304) is determined at the micro-scale using Auger electron spectroscopy (AES). Samples were either mechanically polished (down to diamond pastes) or electrochemically etched in acidic solutions. The micro-electrochemical behavior of samples was then determined in sodium chloride media by means of the electrochemical micro-cell technique (capillary diameters of 30 {mu}m). The results obtained were analyzed considering the passive film chemical composition. Quantitative relationships between electrochemical parameters and the distribution of chromium and iron in the oxide layer were found. Due to differences in mechanical properties between ferrite and austenite, a heterogeneous stress distribution is generated in both phases. A method based on thermal-mechanical simulation was used to quantify ...

Energy Technology Data Exchange (ETDEWEB)

An analysis of the passive films formed on amorphous alloys of the system Fe-10% Cr-5% Mo-P-metalloid and Fe-10% Cr-5% Mo-B-Si revealed that they are more markedly enriched with chromium in silicon-free alloys. In silicon-containing amorphous alloys the passive films were highly enriched with silicon, which occurred in these films in the form of a corrosion product close to SiO/sub 2/. As shown by the investigations of a study of the anodic behavior of Fe/sub 40/Ni/sub 40/P/sub 14/B/sub 6/ and Fe/sub 40/Ni/sub 38/Mo/sub 4/B/sub 18/, phosphorus facilitates the passivation of amorphous alloys by reducing the solution current in the active state and enriching the surface layers of the metal in the form of a black prepassivation film which also contains nickel and iron. The behavior of Fe-Ni amorphous alloys containing only boron as metalloid additive differs little from that of crystalline alloys of similar composition but ...

Energy Technology Data Exchange (ETDEWEB)

In this study, the adoptable essential technologies and reference design concept of the advanced reactor were developed and related basic experiments were performed. (1) Once-through Helical Steam Generator: a performance analysis computer code for heli-coiled steam generator was developed for thermal sizing of steam generator and determination of thermal-hydraulic parameters. (2) Self-pressurizing pressurizer : a performance analysis computer code for cold pressurizer was developed. (3) Control rod drive mechanism for fine control : type and function were surveyed. (4) CHF in passive PWR condition : development of the prediction model bundle CHF by introducing the correction factor from the data base. (5) Passive cooling concepts for concrete containment systems: development of the PCCS heat transfer coefficient. (6) Steam injector concepts: analysis and experiment were conducted. (7) Fluidic diode concepts : analysis and experiment were ...

International Nuclear Information System (INIS)

The electrochemical behaviour of passive films formed on one austenitic stainless steel (AISI 304) and one ferritic stainless steel (AISI 446) in solutions with pH between 0.6 and 8.4 was studied by capacitance measurements and photocurrent spectroscopy. Compositional characterization of the passive films was done by X-ray photoelectron spectroscopy. The capacitance increases with decreasing pH. Doping densities evaluated from Mott-Schottky plots are in the range 2-6 x 10"2"0 cm"-"3 and increased with the pH in the neutral/alkaline range while in pH 0.6, values above 10"2"1 cm"-"3 were found. The bandgap energy indicates two transitions, at 2.5-2.8 and 3.2 eV. The analytical data reveal that, as the pH increased, the films become enriched in Fe(II) and Fe(III), whereas the Cr(III) gradually decreases. The films formed at very low pH had a behaviour that contrasts with that of the films formed in the neutral/alkaline media. The films are ...

International Nuclear Information System (INIS)

Modelization of crack propagation and theoretical prediction of rupture are the two main objectives of researchers in stress corrosion cracking. Nevertheless, to reach this aim, the behavior of the passive film which appears spontaneously on the substrate in contact with an environment has to be known. This structural and mechanical characterization is all the more difficult because the number of parameters is important: crystallinity rate, defects concentration, thickness (about a few nanometers), electric field, chemical composition (a lot of oxides are present), peeling layers (atomic structure for example) and some hypothesis can be made about their multi-layer structure, their chemical composition or their epitaxial character... Passive films formed on 316L or 304L stainless steels in different aqueous solutions (in ambient air, in MgCl_2 at 117 deg. C...) have been studied and some important remarks about their mechanical properties are ...

Energy Technology Data Exchange (ETDEWEB)

A new class of one-dimensional active acoustic metamaterials (AAMMs) with programmable effective densities is presented. The proposed AAMM is capable of producing densities that are orders of magnitudes lower or higher than the ambient fluid. Such characteristics are achieved by using an array of fluid cavities separated by piezoelectric diaphragms that are controlled to generate constant densities over wide frequency bands. The piezodiaphragms are augmented with passive electrical components to broaden the operating frequency bandwidth and enable densities higher than the fluid medium to be generated. The use of these components is shown to be essential to maintain the closed-loop compliance of the piezodiaphragm away from the zone of elastic instabilities. The values of the passive components are selected on a rational basis in order to ensure a balance between the frequency bandwidth and control voltage. With this unique structure of the ...

International Nuclear Information System (INIS)

A series of tests were completed at the Fast Flux Test Facility to demonstrate the passive safety characteristics of liquid metal reactors with natural circulation flow. The first test consisted of transition from forced to natural circulation flow at an initial decay power of 0.3%. The second test represented an unprotected loss-of-flow transient to natural circulation from 50% power with the control rods prevented from scramming into the core. The third test was a steady-state, natural circulation condition with core fission powers up ato about 2.3%. Core sodium data and results of single and multi-channel computer models confirmed the reliability and effectiveness of natural circulation flow for liquid metal reactor safety.

International Nuclear Information System (INIS)

The PANDA test facility at the Paul Scherrer Institute is used to study the long-term performance of the Simplified Boiling Water Reactor's passive containment cooling system. The PANDA tests demonstrate performance on a larger scale than previous tests and examine the effects of any non-uniform spatial distributions of steam and non-condensable gases in the system. The facility is in 1:1 vertical scale and 1:25 scale for volume, power etc. Extensive facility characterization tests and steady-state passive containment condenser performance tests are presented. The results of the base case test of a series of transient system behaviour tests are reviewed. The first PANDA tests exhibited reproducibility, and indicated that the Simplified Boiling Water Reactor's containment is likely to be favorably responsive and highly robust to changes in the thermal transport patterns. (orig.).

International Nuclear Information System (INIS)

Long term indoor radon gas measurements using a passive monitor are now being conducted in the basement HVAC machine rooms of about fifty commercial buildings, which are built in the Tokyo and Nagoya metropolitan area. Ventilation rates are also measured during the monitoring period. The earliest results show that the highest concentration was about twice of the EPA Standards and was obtained at Nagoya in autumn and no clear seasonal change was seen in radon concentration so far, and that the correlation between radon concentration and inverse number of ventilation rate was positive but not high. (orig.). (2 refs., 4 figs., 2 tabs.).

Energy Technology Data Exchange (ETDEWEB)

The surface films formed on type 316LN stainless steels (SS) with different nitrogen contents, during potentiodynamic polarization in acidified 1 M NaCl solution, were characterized by Laser Raman Spectroscopy (LRS). LRS confirmed the presence of oxides and oxychlorides of iron and chromium, hydrated chlorides and nitrates in the film. Raman mapping showed increasing nitrate content in the film with increasing nitrogen content. The film on the uncorroded material showed the presence of chromium and molybdenum oxides. The improvement in pitting corrosion resistance of type 316LN SS with increasing nitrogen content was attributed to increased amount of nitrates in the passive film.

Energy Technology Data Exchange (ETDEWEB)

This experimental research investigates mixed convection and heat transfer augmentation by gaseous forced jets in a large enclosure, at conditions simulating those of passive containment cooling systems for Gen III+ passively safe reactors. The experiment is designed to measure the key parameters governing heat transfer augmentation by forced jets, and to investigate the effects of geometric factors, including the jet diameter, jet injection orientation, interior structures, and enclosure aspect ratio. The tests cover a variety of injection modes leading to flow configurations of interest for mixing and stratification phenomena in containments under accident conditions. Correlations for heat transfer augmentation by forced jets are developed and compared with experimental data. The characteristic recirculation speed inside the enclosure is introduced and analyzed. Steady stratified temperature distributions are compared with model simulations ...

Energy Technology Data Exchange (ETDEWEB)

This paper investigates steels 12Kh18N10T, 10Kh17N13M2T, 08Kh22N6T, and 08Kh21N6M2T. In corrosion of stainless steels in sulfuric acid solutions, dissolved sulfur dioxide acts as a cathodic depolarizer, capable of being reduced to elemental sulfur or forming sulfides with the metal. Depending on the conditions, this is associated with some increase in potential and greater or lesser increase in corrosion or facilitation of passivation of active steel. After passivation the influence of SO/sub 2/ is negligible. The results of this investigation were used as initial data for developing systems of anodic protection for shell-and-tube heat exchangers for sulfuric acid.

International Nuclear Information System (INIS)

By varying different variables (potential, chloride content, surface pretreatment etc.) it is possible to show the effect of increasingly harsher corrosion conditions on passive-layer stability. These changes will not be detected by conventional methods e.g. measurement of passive current density, until a very late stage. Electrochemical noise measurement will allow the action of inhibitors to be detected in a rapid and effective manner. High-alloy steels and titanium claddings subjected to pitting corrosion in chloride-containing media demonstrate how to use this method for problem solutions and to open up new practical applications. The effect of mechanical stresses (natural, tensile) on the corrosion system can be detected by electrochemical noise which opens up new methods for crack corrosion studying and monitoring. (orig./DG).

Energy Technology Data Exchange (ETDEWEB)

The kinetics of passive film formation on iron in borate buffer solution has been studied at different anodic potentials. The process of film growth has been found to occur in four distinct stages. About 80-90% of the total film thickness formed in 1h grows during the initial two stages which last for only 1-3s (depending upon potential). The electric field strength across the film is not constant but decreases with progressing film growth. The thickness of the film determined ellipsometrically is less than that calculated from the electric charge consumed. The process of anodic film formation is accompanied by the dissolution of iron which occurs over the whole range of potentials.

International Nuclear Information System (INIS)

Concentration profiles of passive films formed on electrolytically anodized niobium and niobium-base alloys are obtained by Auger Electron Spectroscopy with simultaneous ion beam etching. The alloys investigated include 5Zr-Nb, 3Zr-10Ti-Nb, 2.5Zr-2W-Nb, and 1Zr-5Mo-5V-Nb. Experiments demonstrate that AES is among the most fascinating techniques for solving various characterization problems related to the structure and composition of the thin films formed by anodization. Data presented supports evidence that combined anodic and cathodic movements take place during film growth. 11 figures.

International Nuclear Information System (INIS)

The chemical composition and the semiconducting properties of passive films formed on nickel based alloy (Alloy 600) in acidic sulphate solution, pH 2.0 at room temperature were studied using Auger analysis, voltammetric techniques and the Mott-Schottky approach. The results obtained revealed that the presence of both chromium and mixed nickel-iron oxides in the films leads to the development of a p-n heterojunction, which controls their electronic structure, similarly manner to the case of stainless steels and Alloy 600 in borate buffer solution. This behavior has been interpreted as representing of an oxide system, which has a duplex character, with an inner p-type semiconducting region, mainly formed by chromium oxide and an outer n-type semiconducting region, containing iron oxide. It could also be observed that the nickel oxide present in the films acts as a barrier layer conferring improved protection.

CERN Document Server

A fundamental Doppler-like but asymmetric wave effect that shifts received signals in frequency in proportion to their respective source distances, was recently described as means for a whole new generation of communication technology using angle and distance, potentially replacing TDM, FDM or CDMA, for multiplexing. It is equivalent to wave packet compression by scaling of time at the receiver, converting path-dependent phase into distance-dependent shifts, and can multiply the capacity of physical channels. The effect was hitherto unsuspected in physics, appears to be responsible for both the cosmological acceleration and the Pioneer 10/11 anomaly, and is exhibited in audio data. This paper discusses how it may be exploited for instant, passive ranging of signal sources, for verification, rescue and navigation; incoherent aperture synthesis for smaller, yet more accurate radars; universal immunity to jamming or interference; and precision frequency scaling of ...

Science.gov (United States)

An interest in electronic materials has led me to investigate new synthetic approaches to III-V' type semiconducting (13-15, current IUPAC designation for B and N groups in the Periodic Table) and magnetic (3-15) compounds. It is now possible to prepare binary (GaAs and GdP) and ternary mixed-metal (Al[sub x]Ga[sub 1-x]As) and mixed-pnictide (GaP[sub x]As[sub 1-x]) compounds in seconds from rapid, low-temperature-initiated metathesis reactions between a metal (III) trihalide and a trisodium pnictide, exemplified by MX[sub 3] + Na[sub 3]Pn [yields] MPn + 3 NaX, where M is Al, Ga, In, (Al,Ga), or a lanthanide; X is F, Cl, or I; and Pn is P, As, Sb, or (P,As). The precursors are mixed together in a dry box and ignited by light grinding with a mortar and pestle, or by brief, local heating from a hot filament. These reactions are very exothermic (calculated [Delta]H[sub rxn] (GaAs) = 138 kcal/mol) and typically reach temperatures in excess ...

International Nuclear Information System (INIS)

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier ...

Energy Technology Data Exchange (ETDEWEB)

GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias ...

Energy Technology Data Exchange (ETDEWEB)

As a candidate of the new concept safety system for the next generation PWR in Japan, the hybrid safety systems, which are combination of the active and the passive safety systems, and passive core cooling system by natural circulation in the reactor coolant loop with horizontal-type steam generators during Loss of Coolant Accidents (LOCAs) are investigated. The passive safety systems are advanced accumulators (ACC), primary-side and secondary-side automatic-depressurization systems (ADS, SADS), and a gravity-driven safety injection system (GDI). The horizontal steam generator design avoids a siphon break caused from the accumulation of non-condensable gases in the tubes by using a vent line in the channel head of the steam generators. This study investigates the passive core cooling characteristics of horizontal-type steam generators under LOCAs. The integrated thermal-hydraulic test has been performed ...

International Nuclear Information System (INIS)

In the recent years the use of nuclear energy has turned from a technical and scientific issue to a political one. The high-temperature reactor (HTR) however, has always been advertised as particularly safe. The present situation and future developments of HTR-technology were the two issues that VDI-News brought up on the 27th October on an HTR-conference in an interview with the 'spiritual father' of the HTR, Prof. Dr. Rudolf Schulten of the Juelich Nuclear Research Centre. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The high cost of proton exchange membrane fuel cells (PEMFCs) poses a significant challenges to their commercial uptake. The bipolar plates connect the anode and cathodes of cells and separate the reactant gases, and are the most expensive components in PEMFCs. Although stainless steel can be used as a low-cost alternative in bipolar plate construction, steel is prone to electrochemical corrosion in the highly acidic PEMFC operation process. This study examined the polarization curves and ICR as a function of compaction force of a high Cr and Ni austenitic stainless steel in an environment simulating the bipolar plate under PEMFC operating conditions. The 3-electrode system consisted of a platinum (Pt) sheet, a saturated calomel electrode with a Luggin capillary contract with the used solution and the work electrode. All polarization curves were measured in a solution of H{sub 2}SO{sub 4} in order to simulate the aggressive PEMFC environment. Surface morphologies of the steels were ...

Energy Technology Data Exchange (ETDEWEB)

A new procedure for an efficient and sparing cleaning procedure of turbines was developed. The procedure uses cleaning and passivation chemicals that solve effectively and homogeneously salt and ferrous oxide coatings from turbines, avoiding attacks from corrosion, plugging and unbalances. In several high-pressure and condensation turbines the cleaning procedure has been already put into practice. (orig.)

Energy Technology Data Exchange (ETDEWEB)

The hydrogen evolution reaction (HER) was studied on Ni-P{sub x} electrodes containing 8 to 16 weight percent P prepared by potentiostatic deposition. The amount of P in the alloy varied with deposition potential. The activity of the electrodes was dependent on the P concentration, and the formation of a passive film. Cyclic voltametry was used to study the removal of this film. 3 refs.

Energy Technology Data Exchange (ETDEWEB)

A research report describes the energy efficiency techniques to be employed in designing a building which is ``green``. Topics covered include building fabric performance, ventilation and infiltration, passive solar design, heating systems and controls, hot and cold water provision, lighting and electrical appliances. (UK)

International Nuclear Information System (INIS)

A number of test series to investigate passive safety systems for the next generation of Light Water Reactors have been performed in the PANDA multi-purpose facility at the Paul Scherrer Institut (PSI). The large scale thermal-hydraulic test facility allows to investigate LWR containment phenomena and system behaviour. PANDA was first used to examine the Passive Containment Cooling System (PCCS) for the Simplified Boiling Water Reactor (SBWR). In 1996 new test series were initiated; all related to projects of the EC Fourth Framework Programme on Nuclear Fission Safety. One of these projects (TEPSS) is focused on the European Simplified Boiling Water Reactor (ESBWR). The ESBWR containment features and PCCS long-term post LOCA response were investigated in PANDA. The PCCS start-up was demonstrated, the effect of nitrogen hidden somewhere in the drywell and released later in the transient was simulated and the effect of light gases (helium) on the ...

Energy Technology Data Exchange (ETDEWEB)

The fundamental ionisation process of negative surface ionisation is described and two applications are discussed. One is in the so called surface-plasma sources which enable the production of intense negative ion beams. The second application is in the passive diagnosis of the charge exchange of neutrals emitted from hydrogen plasmas.

Energy Technology Data Exchange (ETDEWEB)

A new technique is described in this paper for a general active radio frequency (RF) filter trap that can be used for suppressing noise or interference on high voltage (HV) transmission lines. The technique exploits the Miller effect of an RF amplifier in conjunction with a special sensing circuit, and is potentially far more economical to implement than conventional techniques that use passive HV filter components.

International Nuclear Information System (INIS)

Alloy 690 and Alloy600 are used as a material for the steam generator tubing in the pressurized water reactor(PWR) of nuclear power plants due to its high corrosion resistance. Although those are a highly corrosion resistance material, their stress corrosion cracking(SCC) have been found on occasion, which are deeply related to a surface oxide film on a base material which have occurred on the primary side as well as the secondary side of a tubing. And The SCC is accelerated in the existing Pb which is the impurity of secondary steam generator components. The Oxide on a steel surface in an aqueous solution above 100 .deg. C is composed of a duplex film structure. The inner layer of the oxide is dense and less porous, which is formed by a growth of the oxide layer on the metal surface. The outer layer of the oxide is less adhesive, which is formed by a dissolution and precipitation mechanism. Growth processes of the inner layer and the outer layer occur at the metal/oxide and ...

Energy Technology Data Exchange (ETDEWEB)

The B-Factory which is constructed by National Laboratory for High Energy Physics is the device for elucidating the breakdown of symmetry of matter and antimatter by studying the behavior of B mesons which are generated in large quantity when the electrons and the positrons which are accelerated to light velocity level are collided. In order to maintain electron beam-positron beam bunch circling the ring at light velocity stably, the instability of the coupled bunch must be overcome. For this purpose, the ultrahigh speed beam position digital feedback control system was developed. This system is composed of the high speed input-output substrate using GaAs LSI, the feedback computation substrate using complementary metal oxide semiconductor and the memory mounted on it, and the real time operation device. The development of both substrates and their functions are explained. The real time data collection and the change of computation parameters for specific bunch in ...

International Nuclear Information System (INIS)

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first observation of strain-enhanced electron spin polarization for ...

International Nuclear Information System (INIS)

Thinning specimens to electron transparency for electron microscopy analysis can be done by conventional (2-4 kV) argon ion milling or focused ion beam (FIB) lift-out techniques. Both these methods tend to leave 'mottling' visible on thin specimen areas, and this is believed to be surface damage caused by ion implantation and amorphisation. A low energy (250-500 V) Argon ion polish has been shown to greatly improve specimen quality for crystalline silicon samples. Here we investigate the preparation of technologically important materials for nanoanalysis using conventional and lift-out methods followed by a low energy polish in a GentleMill"T"M low energy ion mill. We use a low energy, low angle (6-8 deg.) ion beam to remove the surface damage from previous processing steps. We assess this method for the preparation of technologically important materials, such as steel, silicon and GaAs. For these materials the ability to create specimens from specific sites, and ...

Energy Technology Data Exchange (ETDEWEB)

(Al{sub y}Ga{sub 1{minus}y}){sup 1{minus}x}In{sub x}P semiconductor alloys lattice-matched to GaAs are widely used in visible optoelectronic devices. One of the most recent developments in this area is the AlGaInP-based red vertical cavity surface emitting laser (VCSEL). These lasers, which employ AlGaInP active regions and AlGaAs distributed Bragg reflectors (DBRs), have demonstrated continuous-wave (CW) lasing over the 630--690 nm region of the spectrum. Applications for these lasers include plastic fiber data communications, laser printing and bar code scanning. In this paper, the authors present an overview of recent developments in the processing and performance of AlGaInP based VCSELs. This overview will include a review of the general heterostructure designs that have been employed, as well as the performance of lasers fabricated by both ion implantation and selective oxidation.

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power conversion efficiency of the solar cell.

International Nuclear Information System (INIS)

Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion implantation.

Energy Technology Data Exchange (ETDEWEB)

The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, all as a function of temperature, have been deduced from the fits of the experimental ...

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

International Nuclear Information System (INIS)

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. [copyright] 2001 American Institute of ...

International Nuclear Information System (INIS)

Using standard microfabrication techniques, it is now possible to construct devices that appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date, the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high-frequency operation, have not been tested in detail. We present high-accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single ac-modulated gate at 340 MHz driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a ...

International Nuclear Information System (INIS)

We theoretically model a nuclear-state preparation scheme that increases the coherence time of a two-spin qubit in a double quantum dot. The two-electron system is tuned repeatedly across a singlet-triplet level-anticrossing with alternating slow and rapid sweeps of an external bias voltage. Using a Landau-Zener-Stueckelberg model, we find that in addition to a small nuclear polarization that weakly affects the electron spin coherence, the slow sweeps are only partially adiabatic and lead to a weak nuclear spin measurement and a nuclear-state narrowing which prolongs the electron spin coherence. This resolves some open problems brought up by a recent experiment. We also show that the electronic two-spin states singlet and triplet T_+ are promising candidates for the implementation of a qubit in GaAs double quantum dots (DQD). A coherent superposition of the two-spin states is obtained by finite time Landau-Zener-Stueckelberg interferometry and the single qubit ...

International Nuclear Information System (INIS)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

International Nuclear Information System (INIS)

In order to investigate the relation between the pitting corrosion and precipitated carbides, the heat treatment of specimens was carried out in two ways: Solution treatment and carbides precipitation treatment. The experiment was focused on the polarization curves of specimens immersed in HCL solution and on the microscopic analysis of the corroded specimens through a potentiodynamic method. It was found out that the intergranular and pitting corrosion occurred remarkably in 0.1N and 1N KCL solution when carbides were precipitated around the grain boundary of the 304 stain steel. The intergranular corrosion was noticed in the region of passivation and the pitting was prominent in the region of passivation break-down. The distribution of pits on the solution treated 304 stainless steel was random, while that of pits on carbides precipitated specimen was concentrated around the grain boundary in 0.1N and 1N HCL solution. It was ascertained that ...

Energy Technology Data Exchange (ETDEWEB)

Passive films formed anodically on titanium (Ti) plates in 0.5 M sulfuric acid were corroded in aqueous solutions of H{sub 2}SO{sub 4} in the dark and under illumination of a 250-W mercury lamp. The corrosion depth was determined by calculating the thickness of the oxide layers from interference patterns of reflection spectra in the visible region. Corrosion was observed at pH {le} 3, with the corrosion rate increasing exponentially with decreasing pH and achieving a maximum value at pH {approximately} 1. Photocorrosion generally was quicker than corrosion occurring in the dark in all cases (i.e., open-circuit, short-circuit, bias conditions) and increased under anodic polarization of the oxide electrode together with the photocurrent. Corrosion occurring in the dark decreased very weakly under anodic polarization. Long-term corrosion experiments indicated the initial corrosion rate for a thick anodic oxide was higher than the later rates, probably because of the ...

Energy Technology Data Exchange (ETDEWEB)

Transmission electron microscopy studies on solution-annealed Alloy 800 revealed small (100-200 nm), spherical-shaped titanium carbide (face centered cubic structure) and large (200 nm-5 {mu}m), faceted titanium nitride (hexagonal structure) particles randomly distributed in the austenite matrix. The volume fraction of former particles was found to be greater than that of the latter. Corrosion studies of the alloy in acidic, chlorides and acidic chloride environments at room temperature indicated that the passivity of Alloy 800 was adversely affected by the addition Cl{sup -} ions. X-ray photoelectron spectroscopy revealed that the surface film formed on the alloy at the onset of passivity consisted of Cr{sup 3+} (as Cr{sub 2}O{sub 3}), without any Fe{sup 3+}/Fe{sup 2+} or Ni{sup 2+}. Scanning electron microscopy studies indicated initiation of pitting at large, faceted particles, not at small, spherical-shaped ones.

International Nuclear Information System (INIS)

The studies of forced jet augmentation of natural convection heat transfer are introduced. It investigates experimentally mixed convection and heat transfer augmentation by forced jets in a large rectangular enclosure with a vertical cooling surface. The experiment is designed to measure the key parameters governing the heat transfer augmentation by a forced jet, and to investigate the effects of geometric factors, including the jet diameter, jet injection orientation, interior structures, and enclosure aspect ratio, on conditions simulating those of actual passive containment cooling systems and scales approaching those of actual containment buildings or compartments. The tests that cover a variety of injection modes will contribute to reveal the nature of mixing and stratification phenomena under accident conditions to a new generation of inherently safe reactors. With similarity considerations on governing equations, the heat transfer of mixed convection can be ...

Energy Technology Data Exchange (ETDEWEB)

The passive films formed on iron metal, alloys or stainless steel are extremely thin oxides or hydroxides and possess the properties of high chemical stability in the environment. These films show characteristics interested both electrical as well as electrochemical point of view due to the thin thickness of the films. Auger Electron Spectroscopy, X-ray Photoelectron spectroscopy and so on which are the conventional electrochemical measurement methods or the surface analysis methods are used for the analysis and evaluation of these films, however, at present, the application of research technique focusing the superconductor characteristics of the films are tried. Although, the potential modulation reflection spectroscopy method has merits like possibility of in-situ measurement, high precision, possibility of stable analysis even for extremely thin film and so forth, it has also demerits like difficulty to response the potential modulation of hydroxides and also ...

Energy Technology Data Exchange (ETDEWEB)

Fe-Cr-Mn stainless steel is one of the candidate materials for the 1`st wall materials and structural applications of fusion reactor as regards reduced radioactivation properties than Fe-Cr-Ni austenitic stainless steels. This report deals with the effects of annealing and aging heat treatment on the microstructure, mechanical properties and corrosion resistance of Fe-Cr-Mn alloys varying Mn and W contents, which were made using vacuum high frequency induction furnace. Increasing Mn contents, austenite phase was increased, and maximum .epsilon. martensite phase was formed at about 21% Mn. W-addition made small amount of ferrite phase in the matrix, and the ferrite contents were increased with raising annealing temperature. Increased Mn contents reduced tensile stress and yield stress but increased the elongation. W-addition raised the high temperature tensile properties. The variation of Mn contents had no influenced on corrosion resistance. However, W-addition reduced the ...

Energy Technology Data Exchange (ETDEWEB)

Operating the Stanford Linear Collider (SLC) at 120Hz repetition rate requires the presence of two bunches in both the electron and the positron damping ring. The {pi}-mode instability, a coupled bunch instability where the two bunches oscillate with a phase difference of 180{degrees}, had been observed in both rings with low current thresholds of 7{sup *}10{sup 9} particles per bunch. To avoid the instability, the RF system had to be operated in ways which in general reduced the cavity gap voltages and required constant operational attention. For the 1992 running cycle a passive cavity was installed and successfully tested. It is tuned to the frequency of the lower synchrotron oscillation sideband of an odd revolution harmonic. The impedance of the cavity then damps {pi}-mode oscillations very similar to the Robinson damping provided by the main RF cavities which damps O-mode synchrotron oscillations. In this report we describe the motivation and physical ...

Energy Technology Data Exchange (ETDEWEB)

The five thermal-hydraulic concepts chosen for advanced PWR have been studied as follows: (1) Critical Heat Flux: Review of previous works, analysis of parametric trends, analysis of transient CHF characteristics, extension of the CHF date bank, survey and assessment of correlations, design of a intermediate-pressure CHF test loop have been performed. (2) Passive Cooling Concepts for Concrete Containment system: Review of condensation phenomena with noncondensable gases, selection of a promising concept (i.e., use of external condensers), design of test loop according to scaling laws have been accomplished. and computer programs based on the control-volume approach, and the conceptual design of test loop have been accomplished. (4) Fluidic Diode Concepts: Review of previous applications of the concept, analysis major parameters affecting the performance, development of a computational code, and conceptual investigation of the verification test loop have been ...

Energy Technology Data Exchange (ETDEWEB)

Complementary electrochemical, spectrophotometric and electron microsopic investigations were made in addition to the conversion electron Moessbauer spectroscopic (CEMS) measurements to learn more about the mechanism of corrosion of low carbon steel samples in aqueous sulfate and sulfite containing sulfate solutions (pH 3.5, 6.5 and 8.5). Passivation of iron in pure sulfate solution was studied in detail in earlier papers. In the present work, we used a solution containing both sulfate and sulfite anions to obtain more information about the effect of acid rain on low carbon steel samples. The compositions and thicknesses of the passive films formed due to the electrochemical treatments were determined from the CEM spectra. [gamma]-FeOOH was found in each case on the surface of the samples; nevertheless, at pH 3.5 the sextet belonging to Fe[sub 3]C appears in the CEM spectra, and also FeSO[sub 4] . H[sub 2]O was detected in low concentration ...

Energy Technology Data Exchange (ETDEWEB)

Mitsubishi is now developing a new Pressurized water reactor (PWR), the Mitsubishi simplified PWR (MS-PWR), which has the innovative features of hybrid safety systems (an optimum combination of passive and active systems) and cooling by horizontal steam generators. In order to confirm the feasibility of the Mitsubishi hybrid safety system, various kinds of safety analyses are performed for loss-of-coolant accident events. In parallel to these safety analysis efforts, the following thermal-hydraulic tests are to be performed: (1) thermal-hydraulic test of a horizontal steam generator; (2) integrated thermal-hydraulic test using a simulation loop for the innovative MS-PWR (SLIM).

Energy Technology Data Exchange (ETDEWEB)

A 4{pi} detection system sensitive to light charged particles is being developed at the Laboratori Nazionali di Legnaro (LNL) for the study of reaction mechanisms at energies up to 20 AMeV. The array consists of 262 {Delta}E-E telescopes covering 90% of 4{pi}. Each telescope is made of a 300 {mu}m passivated silicon detector and a 15 mm (or 5 mm) CsI(Tl) crystal read by a photodiode. The system will be operational in the Spring of 1997 and the first experiments will run in the second half of 1997.