Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

Energy Technology Data Exchange (ETDEWEB)

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs solar cell on ...

International Nuclear Information System (INIS)

The properties of negative-ion beams are very important for designing negative-ion apparatus and applications of negative-ion beams, especially, electron detachment cross-sections at the interaction between negative-ion beams and gas particles in the transport system, and secondary-electron emission factors when negative ions are incident on solid surfaces. These properties of negative-ion beams were investigated experimentally as a function of the ion energy under 50 keV. The single electron detachment cross-sections are almost constant in the other of 10"-"1"5 cm"2 in this energy range, but double electron detachment cross-sections increase in proportion to the ion velocity and much smaller than the single one. As for the secondary-electron emission factor, ...

Energy Technology Data Exchange (ETDEWEB)

The strongly localized one-electron (D{sup 0}) and two-electron (D{sup -}) donor states are considered with the lattice deformation around the donor center taken into account. For GaAs, donor energy levels have been calculated as functions of the hydrostatic pressure. The calculated energy positions and pressure coefficients agree with the experimental data. It is shown that the interaction with phonons reduces the probability of radiative transitions between the states of different localization and leads to the metastability of shallow-level donor states with respect to the D{sup -} state in GaAs and both the states (D{sup 0} and D{sup -}) in CdF{sub 2}. (author) 7 refs, 1 fig

Energy Technology Data Exchange (ETDEWEB)

A new scheme of the longitudinal emittance measurement for high energy negative ion beam is proposed. The energy distribution of the detached electron from the negative ions by the photodetachment process, if the photon energy is almost equal to the electron binding energy of the negative ion (=electron affinity of the atom), reflects that of the original negative ions. Therefore, by introducing the photon in a short width comparing with the bunch width of the negative ion beam, the longitudinal energy distribution of each phase of the beam, that is the longitudinal emittance, can be measured. (author).

International Nuclear Information System (INIS)

A new polarized electron gun for use on the SLC at SLAC has been built and tested. It is a diode gun with a laser driven GaAs photocathode. It is designed to provide short (2ns) pulses of 10 A at 160 kV at 120 Hz. The design features of the gun and results from a testing program on a new and dedicated beam line are presented. Early results from operation on the SLC will also be shown.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

Energy Technology Data Exchange (ETDEWEB)

Measurements of the double-electron-capture process in which a positive ion of iodine becomes a negative ion in a single collision with a magnesium atom are reported between 20 and 90 keV. The cross section is comparable to that for the rare gases and not as large as might be expected from a two-valence-electron atom. This process is probably insignificant in the production of negative ion beams using a magnesium-vapor target.

International Nuclear Information System (INIS)

Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected.

Energy Technology Data Exchange (ETDEWEB)

The present invention concerns a negative ion source electrode which can be preferably used in a neutral particle injection device using negative ions for a thermonuclear reactor. Negative ion beams are deflected to the direction opposite to the deflecting direction by magnetic fields by using an electron suppression electrode having electrode holes with the position previously displaced before negative ion beams are accelerated to have a high energy by an accelerator thereby correcting the orbit of the negative ion beams easily. In addition, since the deflection correction electrode having the electrode holes is disposed, a proper voltage is applied to the deflection correction electrode to correct the orbit of the negative ion beams conveniently. Since the deflection correction electrode has a simple structure of a thin flat plate having ...

Energy Technology Data Exchange (ETDEWEB)

An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for terrestrial as well as ...

Energy Technology Data Exchange (ETDEWEB)

As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the ...

Energy Technology Data Exchange (ETDEWEB)

We study two correlated electrons in a nearest-neighbour tight-binding chain, with both on-site and nearest-neighbour interaction. Both the cases of parallel and antiparallel spin are considered. In addition to the free electron band for two electrons, there are correlated bands with positive or negative energy, depending on whether the interaction parameters are repulsive or attractive. Electrons form bound states, with amplitudes that decay exponentially with separation. Conditions for such states to be filled at low temperatures are discussed.

International Nuclear Information System (INIS)

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

Energy Technology Data Exchange (ETDEWEB)

Investigations have been conducted to determine the feasibility of using collisional cooling for reducing the energy spreads and, consequently, the emittances of negative-ion beams. We have designed a gas-filled RF-quadrupole ion cooler equipped with provisions for retarding energetic negative ion beams to energies below thresholds for electron detachment at injection and for re-acceleration to high energies after the cooling process. The device has been used to cool O{sup -} and F{sup -} ion beams with initial energy spreads, {Delta}E > 10 eV to final energy spreads, {Delta}E {approx} 2 eV FWHM. Overall transmission efficiencies of {approx}14% for F{sup -} beams have been obtained. Experimental results show that electron detachment is the major loss mechanism for negative ions.

Energy Technology Data Exchange (ETDEWEB)

We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and ...

Energy Technology Data Exchange (ETDEWEB)

The production of polarized negative ion beams by collisional pumping is described. Collisional pumping utilizes repeated charge changing collisions in a thick electron-spin-polarized gas or vapor target to form a polarized fast atom beam. The polarized fast atom beam is then partially converted into a polarized negative ion beam in a vapor target. Analysis is presented for a hydrogen beam passing through either a thick polarized H atom target or a thick polarized alkali target. Large polarizations and large currents may be possible.

Energy Technology Data Exchange (ETDEWEB)

The temperature and pressure dependence of the mobilities of negative charges injected into liquid hydrogen and deuterium have been measured. The authors propose the existence of two types of charge carriers in liquid parahydrogen. One is a bubble with an electron inside while the other has higher mobility. Relaxation of the current through liquid hydrogen was observed. It is suggested that in liquid and solid hydrogen under {beta}-irradiation neutral complexes are created which can trap the negative charges and have a lifetime of about 10 hours. 6 refs., 5 figs.

Energy Technology Data Exchange (ETDEWEB)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

Energy Technology Data Exchange (ETDEWEB)

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on ...

Science.gov (United States)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al{sub {ital x}}Ga{sub 1{minus}{ital x}}InP{sub 2}; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. {copyright} {ital 1996 The American Physical Society.}

International Nuclear Information System (INIS)

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

Science.gov (United States)

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

British Library Electronic Table of Contents (United Kingdom)

BackgroundOptimal treatment of primary negative symptoms is important because their presence is associated with poor outcome.AimsTo systematically review all studies dealing with the efficacy of pharmacological agents on primary negative symptoms.MethodA comprehensive search of the relevant literature was undertaken using electronic database, reference lists and personal contact.ResultsThere is a lack of standardized research designs. Amisulpride is the most extensively studied drug with respect to efficacy against primary negative symptoms. At low doses it demonstrates a consistent, modest effect compared to placebo, though not to conventional antipsychotics and has yet to be tested against other atypicals. Evidence from multiple studies that used simple statistical analyses and inclusion...

Energy Technology Data Exchange (ETDEWEB)

This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron ...

Energy Technology Data Exchange (ETDEWEB)

The Holifield Radioactive Ion Beam Facility (HRIBF) now under construction at the Oak Ridge National Laboratory will use the 25-MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility; the choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. A high-temperature version of the CERN-ISOLDE positive ion source has been selected and a modified version of the source designed and fabricated for initial use at the HRIBF because of its low emittance, relatively high ionization efficiencies and species versatility, and ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Energy Technology Data Exchange (ETDEWEB)

Neutral atom beams with energies above 200 keV may be required for various purposes in magnetic fusion devices following TFTR, JET and MFTF-B. These beams can be produced much more efficiently by electron detachment from negative ion beams than by electron capture by positive ions. We have investigated the efficiency with which such neutral atoms can be produced by electron detachment in partially ionized hydrogen plasma neutralizers.

Energy Technology Data Exchange (ETDEWEB)

A large negative ion source for JT-60U produces high current ion beam from a wide extraction area of 45 cm x 110 cm. On the other hand, a cross-sectional area of the negative ion based neutral beam (NNB) injection port on JT-60U is narrow, about 50 cm x 60 cm. In order to inject the neutral beam at a high geometric efficiency, i.e. to suppress beam loss in the beamline, it is necessary to steer the beam for both compensation of undesirable beam deflection in extractor and focusing of the beam. For the JT-60U, two methods are provided for the required beam steering. Among them the results of beam steering experiment by aperture displacement and the design study are summarized in the present report. The experiment was carried out with 400 keV negative ion source, which has the three stage accelerator of similar structure as the JT-60U ion source, at Negative Ion Acceleration Test Stand (NIAS). High energy ...

Energy Technology Data Exchange (ETDEWEB)

A versatile, high brightness, volume type, low power RF source, capable of producing positive ion beams with intensities as high as 1 mA from gaseous feed materials and microamperes of negative ion beams has been characterized. The source can also be operated as a plasma sputter negative ion source to generate up to 1 mA of a selected species. The performance of the source in the positive and negative volume modes of operation can be greatly enhanced by addition of a removable, water cooled filament assembly in place of the negative sputter probe. For examine, the material utilization efficiencies of gaseous feed species can be more than doubled, total current intensities increased up to 40%, molecular dissociation fractions increased by 20% and minimum operating pressures reduced by a factor of four when operated in the volume mode. These added electrons also favorably effect, as a ...

International Nuclear Information System (INIS)

Using standard microfabrication techniques, it is now possible to construct devices that appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date, the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high-frequency operation, have not been tested in detail. We present high-accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single ac-modulated gate at 340 MHz driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning ...

Energy Technology Data Exchange (ETDEWEB)

Methods and apparatus are described for efficient photodetachment and purification of negative ion beams. A method of purifying an ion beam includes: inputting the ion beam into a gas-filled multipole ion guide, the ion beam including a plurality of ions; increasing a laser-ion interaction time by collisional cooling the plurality of ions using the gas-filled multipole ion guide, the plurality of ions including at least one contaminant; and suppressing the at least one contaminant by selectively removing the at least one contaminant from the ion beam by electron photodetaching at least a portion of the at least one contaminant using a laser beam.

International Nuclear Information System (INIS)

The interaction of free electrons in the energy range from 0 to 10 eV with molecules at different stages of aggregation is investigated. The mechanism in the gas phase under single collision conditions is described. Fullerenes C_6_0 and C_7_0 are used as targets. Electron impact on condensed molecules can lead to temporary negative ions. The formation of Cl"- from gas phase CCl_4 and the desorption of Cl"- from 6 monolayer CCl_4 film on an Au substrate is determined experimentally. (Suda).

Energy Technology Data Exchange (ETDEWEB)

An RF plasma sputter type heavy negative ion source, which can deliver mA-class negative ion beams (12.1 mA, 1.6 mA and 2.3 mA for Cu{sup -}, C{sup -} and C{sub 2}{sup -} currents, respectively) in dc-mode operation, has been developed. In ion source, a dense plasma of 10{sup 11} cm{sup -3} order was generated in the xenon gas pressure of 10{sup -3}-10{sup -2} Pa with an rf (13.56 MHz) power of 200 - 300 W by using an RF coil, and a relatively large sputtering target of 42 mm in diameter was used. As for intense negative ion beams of silicon or boron which are important dopants for semiconductor fabrication, negative ion extraction properties of the negative ion source was investigated. The extracted total negative ion currents of 4.4 mA for a silicon target and 2.8 mA for a LaB{sub 6} target were obtained after electrons were eliminated by ...

Energy Technology Data Exchange (ETDEWEB)

The fluxes of atmospheric electrons, positrons, positive and negative muons and negative pions have been determined using the NMSU Wizard-MASS2 balloons-borne instrument. The instrument was launched from Fort Sumner, New Mexico, (geomagnetic cut-off about 4.5 GV/c) on september 23, 1991. The flight lasted 9.8 hours and remained above 100.000 ft. Muons and negative pions were observed and their momenta were determined. Since these particles are not a part of the primary component, the measurement of their fluxes provides information regarding production and propagation of secondary particles in the atmosphere. Similarly, observations of electrons and positrons well below the geomagnetic cut-off provides insight into electromagnetic cascade processes in the upper atmosphere. In addition, the determination of the energy spectra of rare particles such as positrons can be used for ...

Energy Technology Data Exchange (ETDEWEB)

The B-Factory which is constructed by National Laboratory for High Energy Physics is the device for elucidating the breakdown of symmetry of matter and antimatter by studying the behavior of B mesons which are generated in large quantity when the electrons and the positrons which are accelerated to light velocity level are collided. In order to maintain electron beam-positron beam bunch circling the ring at light velocity stably, the instability of the coupled bunch must be overcome. For this purpose, the ultrahigh speed beam position digital feedback control system was developed. This system is composed of the high speed input-output substrate using GaAs LSI, the feedback computation substrate using complementary metal oxide semiconductor and the memory mounted on it, and the real time operation device. The development of both substrates and their functions are explained. The real time data collection and the change of ...

Energy Technology Data Exchange (ETDEWEB)

The Holifield Radioactive Ion Beam Facility now under construction at the Oak Ridge National Laboratory will use the 25 MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility. The choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. Although direct-extraction negative ion sources are clearly desirable, the ion formation efficiencies are often too low for practical consideration; for this situation, positive ion sources, in combination with charge exchange, are the logical choice. The ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

Electron cyclotron resonance (ECR) ion sources possess several advantages over ion sources conventionally used for injectors of electrostatic accelerators: improved reliability, high efficiency, simplicity, and the capability of generating bright, high-current ion beams. We have adapted a high-current ECR source originally developed as an injector for a CW RFQ proton linac to serve as a source of intense negative-ion beams for the Tandem Accelerator Superconducting Cyclotron (TASCC) facility at Chalk River. The range of ion species of the source has been extended from H1+ alone up to Bi1+, with both gaseous and nonvolatile feeds. Two intense negative-ion beams of He- and O- have been generated so far with the source coupled to a standard charge-exchange canal. We foresee no major problems generating a broad range of negative ions with this system. (author)

International Nuclear Information System (INIS)

The effects of intradot electron-electron interaction on the photon-assisted Andreev tunneling of a superconductor/carbon-nanotube/superconductor system are studied by using nonequilibrium Green's function technique. The inverse supercurrent reflecting the #pi#-junction transition emerges in the spin-split energy-levels regime polarized by the Coulomb interaction. For the positive tunneling case, the supercurrent reaches its maximum when the spin-degenerate energy-levels are nearest to the Fermi surface. Conversely, for the negative tunneling case, the supercurrent reaches its maximum when two split energy-levels are symmetric with respect of the Fermi surface. The sign and the amplitude of the Andreev tunneling depend distinctly on the energy-level spacing tuned by photon-assisted tunneling. In order to fully understand the transport characteristics, the current-carrying density of states are investigated, which clearly shows the enhancement, ...

Science.gov (United States)

Heterostructures based on AlGaInP alloy compounds are very attractive for visible semiconductor lasers, heterojunction bipolar transistors (HBTs), and high-electron-mobility transistors (HEMTs) lattice matched to GaAs substrates. Several wet etching solutions for AlGaP of different compositions have been studied. Al{sub 0.5}Ga{sub 0.5}P is found to etch in HF, H{sub 3}PO{sub 4}, hyphosphorous acid (HOPH{sub 2}:O), HCl, KOH, and 1% Br{sub 2}-methanol (MeOH). Etching of Al{sub 0.5}Ga{sub 0.5}P in HCl is reaction limited with an activation energy of {approximately}54.4 kJ/mol. At fixed conditions, the etch rates of Al{sub x}Ga{sub 1{minus}x}P vary exponentially with x in HF and HCl, while in 1% Br{sub 2}-MeOH and mixtures of HCl and HNO{sub 3} the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for AlGaP over InGaP or AlInP with high selectivity, while HCl is useful for the reverse case. The use ...

Energy Technology Data Exchange (ETDEWEB)

The fatigue properties of EP539LM alloy with an Al-Nb-Si fused slurry coating and a Co-Cr-Al-Y electron-beam coating are investigated experimentally in vacuum and in air at 900 C. It is found that the protective coatings reduce the fatigue life of the specimens both in vacuum and in air, with the electron-beam coating affecting the fatigue life of the alloy to a lesser degree than the fused slurry coating. The negative effect of the coatings on the fatigue life of the alloy is attributed largely to the properties of the coating material. 7 references.

Energy Technology Data Exchange (ETDEWEB)

A discussion is presented of the 750-KeV chopper experience with both proton and negative ion beams and the ability of these systems to tailor the Linac beam to the diverse requirements of its users; normal accelerator injection, neutron therapy beam, and electron cooling experiments. This flexibility plus a cleaner beam pulse, improved thyratron operation, and mechanical modularity are the results of recent improvements. Additional benefits have been increased reliability and ease of service to the 750-KeV chopper. 3 refs.

International Nuclear Information System (INIS)

This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the ...

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

International Nuclear Information System (INIS)

The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range of 1#centre dot#10"1"7 cm"-"3 - 10"1"8 cm"-"3. (author)

International Nuclear Information System (INIS)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

Energy Technology Data Exchange (ETDEWEB)

Multi-beamlet focusing of an intense negative ion beam has been performed using the beamlet steering by the aperture displacement. The apertures of the grounded grid were displaced as all beamlets of 270 (18 x 15) in the area of 25 cm x 26 cm would be steered to a common point (a focal point) in both the two-stage and the single-stage accelerators. The multi-beamlets were successfully focused and the e-folding half width of 10 cm was achieved 11.2 m downstream from the ion source in both the accelerators. The corresponding gross divergence angle is 9 mrad. The negative ion beamlets are deflected by the magnetic field for the electron deflection at the extraction grid and the deflection direction oppositely changes line by line, resulting in the beam split in the deflection direction. This beamlet deflection was well compensated also using the beamlet steering by the aperture displacement of the grounded grid. The beam ...

Energy Technology Data Exchange (ETDEWEB)

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to ...

CERN Document Server

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2p sub 3 sub / sub 2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga sub 2 O sub 3 powder were used. A separate study aiming the identification of the GaAs surface oxides formed on the GaAs surface during and after ...

Energy Technology Data Exchange (ETDEWEB)

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

International Nuclear Information System (INIS)

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga"+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).

Science.gov (United States)

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al{sub 0.5}Ga{sub 0.5}As and In{sub 0.53}Ga{sub 0.47}As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, {ital E}({Gamma}{sub 1{ital c}}) of AlP, {ital E}({ital L}{sub 1{ital c}}) of AlAs, and {ital E}({ital L}{sub 1{ital c}}) of AlSb are discussed and attributed to various experimental uncertainties. Several other ...

Energy Technology Data Exchange (ETDEWEB)

This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

Energy Technology Data Exchange (ETDEWEB)

Electronic trap densities at the indium tin oxide (ITO)/hole transport layer (HTL) interface in operating organic light-emitting diodes (OLEDs) are characterized in situ using impedance spectroscopy. For OLEDs with a high density of active trap states, negative values of the frequency derivative of resistance are clearly observable for frequencies on the order of 10 kHz, whereas positive values are observed when the trap density is low With this technique, it is revealed that the trap density is minimized via the introduction of a TPD-Si{sub 2} (4,4'-bis[(p-trichlorosilylpropylphenyl) phenylamino]-biphenyl) passivation layer at the ITO/HTL interface or by the application of large electric fields during device operation. Furthermore, impedance spectroscopy illustrates that the ITO/HTL interface is not a simple series resistance when traps are present since they are shown not to contribute to high frequency conduction. Overall, this ...

Energy Technology Data Exchange (ETDEWEB)

We have undertaken a program which measures the photoelectron spectra of negative-ion beams. This experiment has afforded us direct information about these ions and the corresponding neutral radicals. Several ions and numerous radicals are believed to be crucial intermediates in combustion processes and flame chemistry. We have fabricated a spectrometer which directly measures electron affinities (EA). Knowledge of the EA and gas-phase acidity of a radical has enabled us to deduce several radical heats of formation and bond strengths.

International Nuclear Information System (INIS)

Up to now, P diffusion in Ge is modeled with an effective diffusivity involving at most a quadratic dependence with the free electron concentration (n). However, recent theoretical studies suggest the existence of a triply negatively charged state for the free vacancy in germanium and experimental data indicate that the E center (PV pair) in Ge has a double acceptor state. These two facts would be consistent with a diffusivity model involving a cubic dependence with n. In this paper the validity of this approach is checked for both pure thermal diffusion (intrinsic and extrinsic) and implanted phosphorus, using either our own experiments or other data available from the literature. Although some discrepancies still exist in some cases for the redistribution of implanted P, it is shown that the introduction of this cubic dependence significantly improves the overall agreement as compared with the usual model.

Energy Technology Data Exchange (ETDEWEB)

This thesis consists of five chapters, each of which is a self-contained unit. The first chapter overviews methods for electronic-structure calculations. Chapter 2 introduces a new method to generate a rapidly converging configuration expansion. The approach iteratively combines (1) a least-squares fitting of a configuration expansion to a many-body wave function with (2) a transfer-matrix method for projecting out the ground state. Results are shown to be equivalent to multiconfiguration Hartree-Fock. Results from test calculations are given for a simple finite difference model of the helium atom. In Chapter 3 the use of the finite-element method in electronic structure calculations is discussed. Chapters 4 and 5 discuss developments in Monte Carlo methods based on Hubbard-Stratonovich transformations. Chapter 4 introduces a canonical ensemble formulation of the method, which is more appropriate than the usual grand canonical formulation for ...

International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

Energy Technology Data Exchange (ETDEWEB)

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE ...

Energy Technology Data Exchange (ETDEWEB)

Cyclic voltammetry (CV), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) were employed to investigate the electrodeposition of Eu and Al in an LiCl-KCl eutectic melt containing Eu{sup 2+} and Al{sup 3+} at 450 deg. C. In order to deposit a pure Eu and Al alloy, the stoichiometrically lower concentration of Al{sup 3+} than that of Eu{sup 2+} and Al wires as a counter electrode was introduced into the bath of LiCl-KCl melt for the electrodeposition. The electrodeposition takes place at a potential more negative than -1.95 V vs. Ag|Ag{sup +} while the deposit is oxidized at more positive potential than -1.92 V. Two new reduction peaks and an anodic peak on a W working electrode were observed at -2.39 V, -2.42 V, and -2.1 V, vs. Ag|Ag{sup +}, respectively, suggesting that the potential window of the Al system in LiCl-KCl melt can be extended to -2.43 V vs. Ag|Ag{sup +}. The EDS analysis indicated that AlEu can be ...

Energy Technology Data Exchange (ETDEWEB)

At Himeji Institute of Technology, the high power microwaves with the peak power of 20 MW, frequency of 12 GHz and pulse duration of 14 ns have been produced with a virtual cathode oscillator (vircator). These high power microwaves offer new applications in various fields. One problem in laser-triggered lightning experiment is the strong attenuation of laser energy by rain, cloud and laser-produced plasma. Microwaves propagate in thundercloud with small loss, and also are able to irradiate much extensive region of targets. In this paper, the fundamental experiment on the air breakdown induced by high power, short pulse microwaves is reported. The experimental setup of the vircator diode for microwave generation is shown. The typical evolution of diode voltage, electron beam current and microwave emission from the top in the course of time is shown. The experimental setup for microwave-induced air breakdown and the experimental procedure are explained. The results ...

Science.gov (United States)

A doubly Q-switched laser with both an acousto-optic (AO) modulator and a GaAs saturable absorber can obtain a more symmetric and shorter pulse with high pulse peak power, which has been experimentally proved. The key parameters of an optimally coupled doubly Q-switched laser with both an AO modulator and a GaAs saturable absorber are determined, and a group of general curves are generated for what we believe is the first time, when the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined, and the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density as well as the influence of the AO Q-switch are considered. These key parameters include the optimal normalized coupling parameter, the optimal normalized GaAs saturable absorber parameters, and the normalized parameters of the AO Q-switch, which can maximize ...

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

Science.gov (United States)

The zinc-blende (ZB) and wurtzite (W) structures are the most common crystal forms of binary octet semiconductors. In this work we have developed a simple scaling that systematizes the {ital T}=0 energy difference {Delta}{ital E}{sub W{minus}ZB} between W and ZB for all simple binary semiconductors. We have first calculated the energy difference {Delta}{ital E}{sub W{minus}ZB}{sup LDF}({ital AB}) for AlN, GaN, InN, AlP, AlAs, GaP, GaAs, ZnS, ZnSe, ZnTe, CdS, C, and Si using a numerically precise implementation of the first-principles local-density formalism (LDF), including structural relaxations. We then find a {ital linear} scaling between {Delta}{ital E}{sub W{minus}ZB}{sup LDF}({ital AB}) and an atomistic orbital-radii coordinate {ital {tilde R}}({ital A},{ital B}) that depends only on the properties of the free atoms {ital A} and {ital B} making up the binary compound {ital AB}. Unlike classical structural coordinates (electronegativity, atomic sizes, ...

Energy Technology Data Exchange (ETDEWEB)

Negative ion based neutral beam injector is one of the most attractive heating system in future fusion reactors. In realizing the system, the crucial device which has to be developed is a high intensity negative ion source. Significant progress has been made on the negative ion source in these years. Among them, a few ampere negative ion beam were produced stably, while the divergence of negative ion beams becomes to be as low as < 10 mrad. We consider these results are demonstrating the potential of the negative ion source for the heating device in future reactors.

Energy Technology Data Exchange (ETDEWEB)

The reduction of oxygen was studied in 0.1 M KCl at 70 deg. C using the rotating disk electrode (RDE) technique on platinum and electrodeposited ZnO thin film electrodes deposited on platinum substrates. In the absence of Zn{sup 2+} ions in solution, a Tafel slope of 139 mV dec{sup -1} was obtained, a value close to that measured on bare platinum electrode (133 mV dec{sup -1}) and ascribed to the limitation of the reaction rate by the first electron transfer. The main difference between the noble metal and the oxide electrode was a shift of the curves towards more negative potentials. In the presence of Zn{sup 2+} ions, the current density decreased significantly and the Tafel slope was measured at 282 mV dec{sup -1} showing that the electrode was partially blocked by zinc oxide formation reaction intermediates.

British Library Electronic Table of Contents (United Kingdom)

In situ synthesis of silver chloride (AgCl) nanoparticles was carried out under ambient conditions in nanoporous bacterial cellulose (BC) membranes as nanoreactors. The growth of the nanoparticles was readily obtained by alternating dipping of BC membranes in the solution of silver nitrate or sodium chloride followed by a rinse step. X-ray diffraction (XRD) patterns indicated the existence of AgCl nanoparticles in the BC and scanning electron microscopy (SEM) images showed that the AgCl nanoparticles well dispersed on the surface of BC and penetrated into the BC network. The AgCl nanoparticle-impregnated BC membranes exhibited high hydrophilic ability and strong antimicrobial activity against Escherichia coli (Gram-negative) and Staphylococcus aureus (Gram-positive). The preparative proced...

International Nuclear Information System (INIS)

Dust particles in a plasma are charged negatively and are subject to various types of forces, including a drag force by plasma particles and a force due to the collective nature of a plasma. Dust particles are found in a sheath in laboratories balanced by the gravitational force and the electric force, while dust particles in space are ubiquitous, including planetary magnetospheres and interstellar space. Because of the novel nature of a complex system involving plasma particles and dust particles in a collective way, the dusty plasma is often called a complex plasma. The complex plasma is characterized by two distinctly different scales in time and in space. The plasma with electrons, ions and neutrals is characterized by the collective motion with a fast time scale and a short wavelength, while the dust particles move in a slow time scale and a long spatial scale. Some fundamental aspects of a complex plasma are reviewed and possible ...

British Library Electronic Table of Contents (United Kingdom)

Abstract We suggest a simple scheme for automatically determining the width parameter of smearing methods of the Brillouin zone integration in electronic structure calculation. The scheme retains one free parameter that at any time can be eliminated by choosing a denser k-space mesh until the desired accuracy is obtained. The tests are carried out in the context of Methfessel-Paxton smearing. This adaptive Gaussian smearing (AGS) is easily implemented, variational with respect to partial occupancies and free from spurious occupancies that are negative or larger than one. Its convergence properties are similar to those obtained with the modified tetrahedron method for energy resolution of -0.1 meV. 2010 Wiley Periodicals, Inc. Int J Quantum Chem, 2011

Science.gov (United States)

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

Energy Technology Data Exchange (ETDEWEB)

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. A proposed structure for the GaInAsP/Ge cascade cell is also given.

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

Energy Technology Data Exchange (ETDEWEB)

The main physical processes allowing negative ion production by surface sputtering for further acceleration in tandem acceleration are briefly reviewed. The sputtering yield and the probability of negative ion ejection are discussed. The properties of negative ion beams for an efficient acceleration in tandem accelerators are also discussed, with an emphasis on space charge problems. The main features and performances of the heavy negative ion injector of the Bucharest tandem accelerator are given.

Energy Technology Data Exchange (ETDEWEB)

X-ray magnetic diffraction (XMD) technique was applied to an orbital ordering compound of ferromagnetic YTiO{sub 3} for the first time. The orbital-magnetic form factor {mu} {sub L}(k) and the spin-magnetic form factor {mu} {sub S}(k) were independently measured by utilizing the LS separation ability of the XMD. The {mu} {sub L}(k) was measured for ten reciprocal-lattice points. No significant values of the {mu} {sub L}(k) were observed for most of the reciprocal-lattice points within the estimated statistical errors, which suggested quenching of the orbital moment. The {mu} {sub S}(k) was measured for 22 reciprocal-lattice points. Fourier synthesis of the {mu} {sub S}(k) gave the spin density distribution m {sub S}(r) in the real space. The obtained m {sub S}(r) map shows the characteristic feature of the electron distribution of 3d electron in the t{sub 2g} state of a Ti atom coordinated by O{sup 2-} ions, in which the ...

International Nuclear Information System (INIS)

Nitrogen ion implantation improves the wear resistance of Ti-6Al-4V alloys by forming a hard TiN superficial passivation layer. However, the thickness of the layer formed by traditional ion implantation is typically 100-200 nm and may not be adequate for many industrial applications. We propose to use radio-frequency (RF) plasma nitriding and nitrogen plasma immersion ion implantation (PIII) to increase the layer thickness. By using a newly designed inductively coupled RF plasma source and applying a series of negative high voltage pulses to the Ti-6Al-4V samples. RF plasma nitriding and nitrogen PIII can be achieved. Our process yields a substantially thicker modified layer exhibiting more superior wear resistance characteristics, as demonstrated by data from micro-hardness testing, pin-on-disc wear testing, scanning electron microscopy (SEM), as well as Auger electron spectroscopy (AES). The performance of our newly ...

Energy Technology Data Exchange (ETDEWEB)

Two types of switched electrode electronics beam position monitors are in use at Jefferson Lab. Together they provide accurate beam position to the control system for beam intensities between 50 nA and 2 mA. One version, called the linac style, has a switching frequency of 125 kHz. The other, called the transport type, has a switching frequency of 7 kHz. The basic system provides information to the control system at a 1 Hz update rate. The systems are regularly used to measure the AC component of beam position and energy as well as suppress this motion as part of a fast feedback system. Position data produced by the system are also acquired on an event by event basis as part of the nuclear physics program in two of the experimental halls. This paper will focus on the AC characteristics of the system. These characteristics are affected by analog filter frequencies and a time delay between the measurement of the positive electrode signal and the ...

International Nuclear Information System (INIS)

Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.

Energy Technology Data Exchange (ETDEWEB)

A electrochemical cell is described comprising an anode, a cathode, a solid polymer electrolyte; and a redox shuttle additive to protect the cell against overcharging and a redox shuttle additive to protect the cell against overcharging selected from the group consisting of: (a) a substituted anisole having the general formula shown in a figure (in an uncharged state): where R{sub 1} is selected from the group consisting of H, 0CH{sub 3}, OCH{sub 2}CH{sub 3}, and OCH{sub 2}phenyl, and R{sub 2} is selected from the group consisting of OCH{sub 3}, OCH{sub 2}CH{sub 3}, OCH{sub 2} phenyl, and O{sup {minus}}Li{sup +}; and (b) a di-anisole compound having the general formula shown in a second figure (in an uncharged state): where R is selected from the group consisting of -OCH{sup 3} and -CH{sub 3}, m is either 1 or 0, n is either 1 or 0, and X is selected from the group consisting of -OCH{sub 3} (methoxy) or its lithium salt -O{sup {minus}}Li{sup +}. The lithium salt of the di-anisole is ...

Energy Technology Data Exchange (ETDEWEB)

The signature of the negative snakes from the soft X-ray cameras is very similar to the more usual snakes except that the localised region of the snake has, compared with its surroundings, decreased rather than increased emission. Circumstances where negative snakes have been seen are reviewed. The negative snake appears as a region of increased resistance and of increased impurity density. The relationship between the shear and the current perturbation is shown, and it seem probable that the magnetic shear is reversed at the point of the negative snake, i.e. that q is decreasing with radius. 6 refs., 6 figs.

UK PubMed Central (United Kingdom)

Although coagulase-negative staphylococci (C-NS) have been implicated in certain human infections, they are generally regarded as contaminants, and their clinical significance is questioned. To assess...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Neutral beam systems for the next generation of magnetic fusion devices will be based on negative ions. Development are progressing steadily, and large negative ion-based systems are prepared for JT60-U and LHD, and are being considered for ITER. An overview of the physics of the production, acceleration and neutralization of large negative ion beams is given. the present state of the art in Research and Development is also surveyed. (author). 55 refs., 10 figs., 1 tab.

Energy Technology Data Exchange (ETDEWEB)

Negative ion intensities of over 3 x 10/sup 5/ A/m/sup 2/ at energies of 2 MeV have been measured in a magnetically insulated transmission line. This negative ion production can affect the power flow in multiterawatt pulsed power devices, and may also have applications in the generation of high-intensity neutral or negative ion beams.

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a ...

Energy Technology Data Exchange (ETDEWEB)

The results of an investigation on the production of Group IIA atomic and molecular negative ion beams formed in a cesium-sputter negative ion source are presented. The sputtering material was formed by pressing pellets of stoichiometric mixtures of the Group IIA element carbonates and 10% copper powder. Negative ions of several alkaline-earth elements and their oxides have been observed. Beam intensities as high as 180 pA have been observed for Sr{sup -}and 20 nA for SrO{sup -}. (orig.).

CERN Document Server

We fabricated a double negative acoustic metamaterial which consisted of Helmholtz resonators and membranes. Experimental data on the transmission and dispersion relation are presented. The system exhibits three frequencies where the acoustic state makes sharp transitions from density negative ({\\rho} -NG) to double negative (DNG), modulus negative (B-NG), and double positive (DPS) in sequence with the frequency. We observed a wide range of negative refractive index from -0.06 to -3.7 relative to air, which will allow for new acoustic transformation techniques.

Science.gov (United States)

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion ...

Science.gov (United States)

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

Energy Technology Data Exchange (ETDEWEB)

Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.

Energy Technology Data Exchange (ETDEWEB)

Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.

International Nuclear Information System (INIS)

Deep level effects in GaAs MOSFET have been characterised in the ohmic channel using DLTS, low frequency excess noise and dispersion technique. An isothermal multi exponential curve fitting method has been devised and implanted into the DLTS system. Multi exponential curve fitting method used to decompose a multi exponential transient into its constituents so that the peak signature can be better characterised for the case whereas several peaks are closely spaced. Low frequency excess noise and dispersion techniques also confirm the trap in signature of the same traps observed in the DLTS measurements. (author)

Science.gov (United States)

New tetradentate N(2)O(2) donor Schiff bases and their mononuclear Co(II), Ni(II), Cu(II), and Pd(II) complexes were synthesized and characterized extensively by IR, (1)H-, (13)C-NMR, mass, ESR, conductivity measurements, elemental and thermal analysis. Specifically the magnetic and electronic spectral measurements demonstrate the octahedral structures of cobalt(II), nickel(II) complexes and square planar geometries of copper(II), palladium(II) complexes. All the ligands and complexes were screened for their in vitro antibacterial activity against two gram-positive bacteria (Bacillus subtilis, Staphylococcus aureus) and two gram-negative bacteria (Escherichia coli, Klebsiella pneumonia). In this study, Pd(II) complexes exhibited potent antibacterial activity against B. subtilis, S. aureus whereas other metal complexes also exerted good activity towards all tested strains even than standard drugs streptomycin and ampicillin. PMID:21297294

International Nuclear Information System (INIS)

By using a plasma nitriding procedure at the PUPR Mirror Cusp Plasma machine, surface hardness is increased in 302/304-type stainless steel samples by exposing them to high-ion-density plasma at high vacuum. This method successfully dopes the surface of the material with strengthening nitrogen ions, without the use of chemical procedures that sacrifice the resistance to corrosion of the given material. A 500 V negative bias is placed on the sample exposed to the nitrogen plasma, where high-energy ions are therefore attracted and immersed into the metallic matrix microns into the surface of the stainless steel. This potential maintains a constant surface temperature at approximately 800 deg. C. The plasma parameters including ion density and plasma temperature were diagnosed using single Langmuir probes. The stainless steel samples were then tested using scanning electron microscopy (SEM), and Vickers micro-hardness testing to determine the ...

International Nuclear Information System (INIS)

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both n-type outer hydroxide and inner oxide layers. On the other ...

International Nuclear Information System (INIS)

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant #tau# obtained from the curve fitting represents the time accumulation during the process. The ...

Energy Technology Data Exchange (ETDEWEB)

In our continued efforts for improving the performance of zinc anodes for a Zn/air battery, we now report the preparation of three alloys and improved performances of anodes made up with these alloys. The alloys contained zinc, nickel, and indium with different weight percentages and were calcined at two different temperatures. Out of the six alloys, the alloy which has a composition of zinc 90%, nickel 7.5% and Indium 2.5% and fired at 500{sup o}C is found to be the best. In the case of the hydrogen evolution reaction, this alloy had its potential shifted to a more negative potential. As far as the cyclic voltammograms were concerned, the difference between the anodic and cathodic part was minimal when compared with other alloys. Surprisingly, this alloy had reversibility even after 100 cycles of the cyclic voltammogram. This is a clear indication that dendrite formation was reduced to a considerable extent. Images taken with a scanning ...

Science.gov (United States)

Macromolecular and polyanionic Na(+)-poly(gamma-glutamic acid) (PGA) silver nitrate complex acted as both a metal ion provider and a particle protector to fabricate nanosized silver colloids under chemical reduction by dextrose. The formation and size of particles have been characterized from transmission electron microscopy (TEM), dynamic light scattering analysis and UV-vis spectrophotometer. The results showed that the average particle size was 17.2+/-3.4 to 37.3+/-5.5 nm, apparently depending on the complex concentration. It was found that the rate constant and conversion of silver nanoparticles were proportional to the concentration of PGA. The growth mechanism of nanosized silver colloid was fully discussed. In addition, the in vitro cytotoxicity evaluated by L929 fibroblasts proliferation and antibacterial activity against Gram-positive strain (methicillin-resistant S. aureus (MRSA)) and Gram-negative strain (P. aeruginosa) bacteria have ...

CERN Document Server

Electronic Health Records

Energy Technology Data Exchange (ETDEWEB)

Ion beams of halogens can be produced either positively or negatively charged, depending on the employed ion source. At CERN-ISOLDE, although positively charged fluorine and astatine can be obtained from a hot plasma ion source, they are often contaminated by isobars and molecular sidebands. This has generated a request from the scientific community for fluorine and astatine negative ion beams free of contaminants. The high selectivity ensured by the surface ionisation process also makes negative beams of chlorine, bromine and iodine highly attractive. However, the efficiency figures for negative surface ionisation of fluorine and astatine were lower than the ones from the hot plasma. Here we report our R and D on new surface ion sources suitable for the production of negative halogen beams.

Energy Technology Data Exchange (ETDEWEB)

The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination ...

Energy Technology Data Exchange (ETDEWEB)

Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

International Nuclear Information System (INIS)

Available data are presented which support the supposition that metals and alloys with a negative low-temperature Hall coefficient are apparently not superconducting. (author).

UK PubMed Central (United Kingdom)

A 42% (70 of 167 isolates) incidence of resistance to 20 micrograms of trimethoprim per ml was found among clinical isolates of coagulase-negative staphylococci from two hospitals. A specific trimethoprim...Full Text Available

UK PubMed Central (United Kingdom)

Delta-hemolysin of coagulase-negative staphylococcal strains was immunologically identical to delta-hemolysin of Staphylococcus aureus (Newman) but distinct from delta-hemolysin from a canine strain...Full Text Available

UK PubMed Central (United Kingdom)

The antibiotic resistance patterns of gram-negative fecal bacteria from pigs in three herds with different histories of antibiotic exposure were examined. In general, smaller proportions of antibiotic-resistant...Full Text Available

International Nuclear Information System (INIS)

The in-plane resistivity, in-plane absolute thermopower, and upper critical field measurements are reported for single-crystal samples of YNi_2B_2C and LuNi_2B_2C superconductors. The in-plane resistivity shows metallic behavior and varies approximately linearly with temperature near room temperature (RT) but shows nearly quadratic behavior in temperature at low temperatures. The YNi_2B_2C and LuNi_2B_2C single-crystal samples exhibit large transverse magnetoresistance (#approx#6 8% at 45 kOe) in the ab plane. The absolute thermopower S(T) is negative from RT to the superconducting transition temperature T_c. Its magnitude at RT is a few times of the value for a typical good metal. S(T) is approximately linear in temperature between #approx#150 K and RT. Extrapolation to T=0 gives large intercepts (few #mu#V/K) for both samples suggesting the presence of a much larger knee than would be expected from electron-phonon interaction renormalization ...

Energy Technology Data Exchange (ETDEWEB)

(12/11)CASSCF and (12/11)CASPT2 ab initio electronic structure calculations with both the cc-pVDZ and cc-pVTZ basis sets find that there is a barrier to the very exothermic hydrogen shift that converts singlet methylnitrene, CH{sub 3}N, to methyleneimine, H{sub 2}C{double{underscore}bond}NH. These two energy minima are connected by a transition structure of C{sub s} symmetry, which is computed to lie 3.8 kcal/mol above the reactant at the (12/11)CASPT2/cc-pVTZ//(12/11)CASSCF/cc-pVTZ level of theory. The (12/11)CASSCF/cc-pVTZ value for the lowest frequency vibration in the transition structure is 854 cm{sup {minus}1}, and CASPT2 calculations concur that this a{double{underscore}prime} vibration does indeed have a positive force constant. Thus, there is no evidence that this geometry is actually a mountain top, rather than a transition structure, on the global potential energy surface or that a C{sub 1} pathway of lower energy connects the reactant to the product. ...

British Library Electronic Table of Contents (United Kingdom)

A metamaterial that is composed of solid viscoelastic elements with controllable properties is proposed in this Letter. This enables an adaptable and general acoustic metamaterial to be practically realised. An array of masses with a single elastic connection to a supporting viscoelastic structure, such as one that is dynamically equivalent to an array of Helmholtz resonators, only provides a system with negative effective mass. A local active control scheme applied to each of these masses can emulate additional elastic connections to the supporting structure. An array of masses with a suitable local control scheme can provide both the negative effective stiffness and mass required for negative refraction. The tuneable feedback control parameters determine the characteristics of the region...

Energy Technology Data Exchange (ETDEWEB)

Two sources of negative ions are described. An rf source produces up to 14 ..mu..A beams of He/sup -/ by charge exchange in Rb vapor. The other Source of Negative Ions by Cesium Sputtering (SNICS) produces a wide variety of negative ion beams in the ..mu..A range. Two important features of SNICS are its simple, compact construction and its very good beam emittance (2 to 4..pi..mm mrad MeV/sup 1/2/). Both sources have lifetimes >200 hours and they are used extensively on the Wisconsin EN tandem.

Energy Technology Data Exchange (ETDEWEB)

The requirements for transporting high-current, negative-ion beams are presented with particular emphasis on applications involving negative-hydrogen-ion beams. In addition to the usual matching and steering problems, particular attention must be paid to beam emittance growth in the transport system. Depending on the application, a number of approaches have been developed using both magnetic and electric lenses. I discuss the design considerations for transporting and matching these beams to radiofrequency quadrupole accelerators, and present a survey of the various types of beamlines now used for negative-ion beams.

Energy Technology Data Exchange (ETDEWEB)

The requirements for transporting high-current, negative-ion beams are presented with particular emphasis on applications involving negative-hydrogen-ion beams. In addition to the usual matching and steering problems, particular attention must be paid to beam emittance growth in the transport system. Depending on the application, a number of approaches have been developed using both magnetic and electric lenses. I discuss the design considerations for transporting and matching these beams to radiofrequency quadrupole accelerators, and present a survey of the various types of beamlines now used for negative-ion beams.

International Nuclear Information System (INIS)

The time dependence of negative corona current I, called by Gagarin like 'relaxing of CV-characteristics', is a observed phenomena. The observed phenomena was explained by two theoretical models considering the ion-molecule and chemical reactions in the negative corona discharges in air, especially the ozone production. In the presented paper the discrepancies of above mentioned models, re-examination the earlier experimental data and presumptions used in models in a light the latest experimentally confirmed facts are discussed.

Energy Technology Data Exchange (ETDEWEB)

The possibility of applying the near infrared gas dynamic lasers (GDL) for neutralization of negative ion beams is examined. A criterion of neutralization is suggested. The use of the criterion makes it possible to select an optically active medium for a negative ion neutralization. To demonstrate the method media containing hydrohalogens as imitating molecules are taken. ((orig.))

Energy Technology Data Exchange (ETDEWEB)

The fundamental ionisation process of negative surface ionisation is described and two applications are discussed. One is in the so called surface-plasma sources which enable the production of intense negative ion beams. The second application is in the passive diagnosis of the charge exchange of neutrals emitted from hydrogen plasmas.

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack ...

CERN Document Server

Negative frequency has a physical meaning, the complete description of a frequency signal is a rotating complex signal, in complete description, positive frequency signal exp(iwt) and negative frequency signal exp(-iwt) is two distinguishable and independent frequency signals. Because the real-carrier modulation and demodulation do not distinguish positive and negative frequency, so half of the spectrum resources and signal energy are wasted. The complex-carrier modulation uses the distinguishable positive frequency signal exp(iwt) and negative frequency signal exp(-iwt) as the carrier signals, they can carry different information, so the spectrum resources is full used, the complex-carrier demodulation does not lose signal energy, so the spectrum efficiency is improved.

Science.gov (United States)

... TECHNICAL REPORT ARBRL-TR-02476 SCANNING ELECTRON MICROSCOPE ... SCANNING ELECTRON MICROSCOPE EXAMINATION OF ...

ScienceCinema

...english ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

We have investigated the characteristics of ion-beam-induced spontaneous etching (IBISE) of GaAs in Cl_2 ambient by using a Ga-focused ion beam (FIB) with an energy ranging from 3 to 15 keV. The etched depth of the irradiated region was more than 20 times greater than that of unirradiated region. When the sputtered depth by FIB irradiation amounted to around 8 A at each ion energy, the etched depth in Cl_2 ambient for 1 hour became saturated. The saturated etched depths were 450, 550, 750 and 800 A at the ion energy of 3, 5, 10 and 15 keV, respectively. The residual damage of the etched surface was also investigated by photoluminescence (PL) measurement. The maximal PL intensity was obtained at around the threshold dose of IBISE and increased with decreasing ion energy. The full recovery of PL intensity was observed at the ion energy of 3 keV after annealing at 400degC. (author).

International Nuclear Information System (INIS)

Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 #mu#m was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from ...

International Nuclear Information System (INIS)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K_#alpha# X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K_#alpha# X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the conditions necessary for ...

International Nuclear Information System (INIS)

Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that by N2 plasma.

Energy Technology Data Exchange (ETDEWEB)

A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

Energy Technology Data Exchange (ETDEWEB)

A review is given of the state-of-the-art of single and polycrystalline solar cells, which includes a short theoretical review, laboratory achievements, and production methods. The Si single and polycrystalline cell and the amorphous Si cell are described, including material preparation, crystal and sheet growth, and cell and panel production. Promising second generation thin film solar cells including GaAs, CdS(CuInSe/sub 2/), and CdTe are briefly described. Economical aspects are discussed.

Energy Technology Data Exchange (ETDEWEB)

A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

Energy Technology Data Exchange (ETDEWEB)

This thesis details the first direct ultrafast measurements of the dynamic thermal expansion of a surface and the temperature dependent surface thermal diffusivity using a two-color reflection transient grating technique. Studies were performed on p-type, n-type, and undoped GaAs(100) samples over a wide range of temperatures. By utilizing a 90 fs ultraviolet probe with visible excitation beams, the effects of interband saturation and carrier dynamics become negligible; thus lattice expansion due to heating and subsequent contraction caused by cooling provided the dominant influence on the probe. At room temperature a rise due to thermal expansion was observed, corresponding to a maximum net displacement of {approximately} 1 {Angstrom} at 32 ps. The diffracted signal was composed of two components, thermal expansion of the surface and heat flow away from the surface, thus allowing a determination of the rate of expansion as well as the surface thermal diffusivity, ...

Science.gov (United States)

The Plasma and Ion Source Technology Group at the Lawrence Berkeley National Laboratory have been developing rf-driven ion sources for the last two decades. These sources are being used to generate both positive and negative ion beams. Some of these sources are operating in particle accelerators such as the Spallation Neutron Source (SNS) at Oak Ridge, while others are being employed in various industrial ion beam systems. There are four areas where the rf-driven ion sources are commonly used in industry. (1) In semiconductor manufacturing, rf-driven sources have found important applications in plasma etching, ion beam implantation, and ion beam lithography. (2) In material analysis and surface modification, miniature rf-ion sources can be found in focused ion beam systems. They can provide ion beams of essentially any element in the Periodic Table. The newly developed combined rf ion-electron beam unit improves greatly the performance of the ...

Energy Technology Data Exchange (ETDEWEB)

In this study samples of AISI 4140 steel were pretreated by plasma nitriding and coated with two different physical vapour deposited coatings (TiN and TiAlN). A hardened AISI 4140 sample and a coated sample were also included in the investigation. To examine the influence of the nitrided zone on the performance of the coating-substrate composite, two different nitriding conditions - a conventional 25% N{sub 2} and an N{sub 2}-poor gas mixture - were used. The specimens were investigated with respect to their microhardness, surface roughness, scratch adhesion and dry sliding wear resistance. Wear tests in which the duplex-treated pins were mated to hardened ball bearing steel discs were performed in a pin-on-disc machine under dry sliding conditions. Metallography, scanning electron microscopy and profilometry were used to analyse the worn surfaces in order to determine the dominant friction and wear characteristics of the samples investigated. The results show ...

International Nuclear Information System (INIS)

The UK fully supports the objective of the Joint Convention on the Safety of Spent Fuel Management and on the Safety of Radioactive Waste Management to achieve and maintain a high level of safety worldwide in spent fuel and radioactive waste management, through the enhancement of national measures and international co-operation, including where appropriate, safety-related co-operation. The UK's Health and Safety Executive, through its Nuclear Safety Directorate (NSD), has been committed to the Convention since the initial negotiations to set up the Convention and provided the president of the first review meeting in 2003. It would be wrong of any nation to believe that they have all the best solutions to managing spent fuel and radioactive waste. The process of compiling reports for the Convention review meetings provides a structured process through which every contracting party can review its provisions against a common set of standards and identify for itself possible areas of ...

International Nuclear Information System (INIS)

A study of the magnetic properties and the heat capacity as functions of temperature and magnetic field of two ternary carbides RNiC_2, where R=La and Ce, confirms that LaNiC_2 becomes superconducting at T_c=2.7thinspK, and that CeNiC_2 orders antiferromagnetically below 18thinspK. LaNiC_2 is a conventional superconductor with a critical field of 900 Oe at T=2thinspK. CeNiC_2 obeys the Curie-Weiss law between 50 and 300thinspK showing the nearly full Ce"3"+ magnetic moment, p_e_f_f=2.47(1)#mu#_B, and has a negative paramagnetic Weiss temperature #THETA#_p=-18.3(8)thinspK. A low net magnetic moment in the ordered state, which is far from saturation in a magnetic field of 5thinspT, is consistent with an antiferromagnetic ground state. Below 20thinspK CeNiC_2 shows multiple-step magnetic transitions at 18, 10, and 2.4thinspK. Both LaNiC_2 (in the normal state) and CeNiC_2 have the same electronic heat capacity, #gamma#=6.5(2)thinspmJ/molthinspK"2, ...

Energy Technology Data Exchange (ETDEWEB)

Personnel radiation monitoring is essential to the operation of any nuclear facility and work in this area continues to strive for an accurate determination of personnel dose. In particular recent attention has been focused upon the need to improve the accuracy of neutron dosimetry, mainly because of their high Relative Biological Effectiveness. In this work the feasibility of using the NE-213 liquid scintillation detector as an efficient neutron/..gamma.. ray radiation monitor is demonstrated. Derivative method spectrum unfolding used in MATXUF for on-line analysis of fast neutron spectra has also been applied to real time ..gamma.. spectrum unfolding (MATXUF2), making possible simultaneous on-line monitoring of both fast neutrons and gammas. To eliminate the negative fluxes in the unfolded ..gamma.. spectra created by the photopeak-Compton edge combination in the plateau portion of the knee response, correcting equations using a linearized approximation to the ...

Science.gov (United States)

Personnel radiation monitoring is essential to the operation of any nuclear facility and work in this area continues to strive for an accurate determination of personnel dose. In particular recent attention has been focused upon the need to improve the accuracy of neutron dosimetry, mainly because of their high Relative Biological Effectiveness. In this work the feasibility of using the NE-213 liquid scintillation detector as an efficient neutron/gamma ray radiation monitor is demonstrated. Derivative method spectrum unfolding used in MATXUF for on-line analysis of fast neutron spectra has also been applied to real time gamma spectrum unfolding (MATXUF2), making possible simultaneous on-line monitoring of both fast neutrons and gammas. To eliminate the negative fluxes in the unfolded gamma spectra created by the photopeak-compton edge combination in the plateau portion of the knee response, correcting equations using a linearized approximation to the ...

International Nuclear Information System (INIS)

For the intermetallic system CaCdsub(1-x)Tlsub(x), 0 <= x <= 1, the Knight shift Ksub(s) of the Cd-NMR and the Tl-NMR were calculated as a function of x, Ksub(s) = Ksub(s)(x). The theoretical investigations were performed on the basis of relativistic augmented-plane-wave (RAPW) band-structure calculations for the boundary phases CaCd and CaTl respectively, and by using the rigid band model for the ternary phases. The density of states and the matrix elements of the relativistic hyperfine operator for electron states at the Fermi surface were calculated in detail. The obtained values were compared with nonrelativistic calculations. The effect of using different exchange potentials was studied for Ksub(s)(Tl). For the Cd-NMR the relativistic effects enhance the nonrelativistic results by a factor of about 1.4. The theoretical value for the Knight shift is smaller than the experimental one by a factor of 1.13. The band structure for CaTl differs significantly ...

Energy Technology Data Exchange (ETDEWEB)

Taking the development of large current, negative ion sources which is in progress aiming at nuclear fusion reactors and the development of high luminance ion sources planned as a part of the Omega Project as the examples, the technology for generating high power ion beams is explained. Both these projects are positioned at the limit of the present technology of high power ion beam application as their targeted beam power reaches several tens MW. Consequently, the requirement for the ion sources is severe, and in particular, the generation of the ion beams having large current density with good convergence is beyond all precedents. The application of high power ion sources has been realized as the neutral beam injectors for large tokamaks. Also the hydrogen negative ion source of large current and the electrostatic acceleration technology for negative ion beams have been developed. Large plasma sources, the method of ...

Energy Technology Data Exchange (ETDEWEB)

A brief description of a method for producing relatively intense molecular negative ion beams for the difficult Group IIA elements is given which offers considerable improvement in terms of source operation and beam intensity stability over other methods conventionally utilized. It is particularly suited for use in cesium plasma sources such as the Aarhus geometry and axial geometry versions of the source. The method utilizes H/sub 2/ source feed gas for the production of a hydrogen-rich plasma discharge which sputters a negatively biased probe made of elemental or copper alloy material. Negative ion beams of MgH/sub 3//sup -/>=12 ..mu.. A have been realized during routine operation of the 25 MV tandem accelerator. Negative ion beam intensity data, typical source operational parameters, and examples of mass spectra associated with their production are given. Interesting intermetallic molecular ...

Science.gov (United States)

... Accession Number : AD0633770. Title : THE INTERPRETATION OF ELECTRON MICROSCOPE FRACTOGRAPHS. Descriptive Note : Final rept.,. ...

Science.gov (United States)

ELECTRON MICROSCOPE STUDIES INTO THE MORPHOLOGY AND LOCALIZATION OF OMSK HEMORRHAGIC FEVER VIRUS IN INFECTED ...

Energy Technology Data Exchange (ETDEWEB)

High-current implantation of Cu{sup {minus}} ions into silica glasses has been demonstrated using mA-class negative ion beams at 60 keV. Negative ion implantation has an advantage to alleviate specimen charging for insulating substrates and has attained high dose rates, up to 260 {micro}A/cm{sup 2}. Spherical Cu colloids form in the silica glasses without additional thermal annealing. Optical absorption and reflection of the implanted specimens vary with the current density, even at a fixed dose level. A beam-induced surface plasma may affect the high current implantation.

Energy Technology Data Exchange (ETDEWEB)

Average emittance data for ion beams extracted from cesium-sputter negative ion sources equipped with spherical, ellipsoidal, and cylindrical geometry cesium-surface ionizers are presented. The attributes of the respective source geometries are described in terms of their cesium ion optical properties. The results of recent measurement of the emittances of momentum-analyzed beams extracted from the ellipsoidal geometry source are also presented. These measurements indicate the presence of a species-dependent effect. The effect is believed to be attributable to differences in the energy spreads of the respective negative ion beams introduced by the sputter generation process. 11 refs., 8 figs.

UK PubMed Central (United Kingdom)

SUMMARYHomeostatic synaptic plasticity is a negative feedback mechanism neurons use to offset excessive excitation or inhibition by adjusting their synaptic strengths. Recent...Full Text Available

UK PubMed Central (United Kingdom)

Legionella pneumophila is a gram-negative bacterial species that is ubiquitous in almost any aqueous environment. It is the agent of Legionnaires’ disease, an acute and often...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundPhotorhabdus luminescens is a Gram-negative luminescent enterobacterium and a symbiote to soil nematodes belonging to the species Heterorhabditis...Full Text Available

International Nuclear Information System (INIS)

The unknow parities of five strong dipole states between 6 and 8 MeV in "8"8Sr are shown to be negative. (orig.).

UK PubMed Central (United Kingdom)

Autophagy is an evolutionarily conserved catabolic process that involves the invagination and degradation of cytoplasmic components through an autophagosomelysosome track. Autophagy functions...Full Text Available

UK PubMed Central (United Kingdom)

Amotivation is a telling hallmark of negative symptomatology in schizophrenia, and it impacts nearly every facet of behavior, including inclination to attempt the difficult cognitive tasks involved...Full Text Available

UK PubMed Central (United Kingdom)

Francisella tularensis is a Gram-negative bacterium capable of causing the zoonotic disease tularaemia in a large number of mammalian species and in arthropods. F. tularensis...Full Text Available

British Library Electronic Table of Contents (United Kingdom)

Abstract Background: This study involves a multicentre surveillance of tigecycline and tetracycline activity against Gram-negative and Gram-positive bacteria from primary care centres (PCCs), general hospital wards (GHWs) and intensive care units (ICUs) in Denmark (n == 9), Finland (n == 10), Norway (n == 7) and Sweden (n == 19). Methods: The hospitals were each asked to test 30 consecutive Gram-positive and 30 Gram-negative clinical isolates. Supportive information accompanying each isolate included the study centre, ward level (PCC, GHW, or ICU), patient identification and source of the isolate. Minimum inhibitory concentrations (MICs) for tetracycline and tigecycline were determined with the Etest. Results: The isolates collected comprised 1610 Gram-negative and 1767 Gram-positive clini...

International Nuclear Information System (INIS)

The MOS-technology allows to make tiny electronic lenses for multibeam electron systems. In the paper results of research and principles of designing of tiny magnetic electron lenses are submitted. Electronic lenses with a nonconventional configuration of tiny magnetic circuit and electronic lenses with coincident electric and magnetic fields in nonconventional tiny performance are considered

UK PubMed Central (United Kingdom)

BackgroundThe status of estrogen receptor-α (ERα) is critical to the clinical prognosis and therapeutic approach in breast cancer. ERα-negative breast cancer...Full Text Available

International Nuclear Information System (INIS)

It is proven that there do not exist any Bianchi type-IX universes which expand for an infinite time, provided only that the matter satisfies the dominant energy condition and has non-negative average pressure (i.e., a non-negative trace of the spatial projection of the stress-energy tensor). This generalizes a proof recently given by us for the case of diagonal Bianchi type-IX solutions.

Energy Technology Data Exchange (ETDEWEB)

To suppress space charge blowup in an ion beam passing through a photoneutralizer, it is necessary to introduce some background gas. An analysis is presented of the neutralization of a high-energy, >200-keV negative deuterium ion beam, exposed to photodetachment while in the presence of deuterium. With a gas thickness of <0.01 Torr.cm, the neutral fraction in the output beam is found to be about the same as that gotten from the photoneutralizer operating in vacuum. Neutral atom beam injection for plasma heating is discussed.

UK PubMed Central (United Kingdom)

Antimicrobial susceptibilities of 233 Gram-positive and 180 Gram-negative strains to two novel bis-indoles were evaluated. Both compounds were potent inhibitors of Gram-positive bacteria, with MIC₉₀...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A study of the electron beam dynamics in the linac is conducted for the FERMI free electron laser (FEL) founded for construction at the Sincrotrone Trieste.

Energy Technology Data Exchange (ETDEWEB)

We show that, for the high electron currents used in present-day free-electron lasers, spontaneous radiation is distributed according to thermal statistics.

Science.gov (United States)

Electron Microscope Database. Entry ID: em_database ... Ancillary Keywords. electron microscope. Data Set Progress. IN WORK. Originating Center ...

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We report measurements of the temperature dependence of the threshold current of GaAs, 1.3-..mu..m InGaAsP, and 1.5-..mu..m InGaAsP double heterostructure lasers using short electrical pulses. T/sub 0/approx.200 K is observed for all the lasers. These high T/sub 0/ values show that the carrier density at threshold does not increase rapidly with increasing temperature in any of the lasers studied and thus the observed low cw T/sub 0/ of InGaAsP lasers is primarily due to a decrease of the carrier lifetime at threshold with increasing temperature.

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Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

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This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

International Nuclear Information System (INIS)

The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.

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In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

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...spontaneous radiation ...

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Short communication.

Czech Academy of Sciences Repository

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International Nuclear Information System (INIS)

Spectral-luminescent characteristics of Sr2Y8(SiO4)6O2: Eu powder crystal phosphor with the apatite structure and high-intensity luminescence of Eu3+ ions have been studied. The charge state of europium in the samples has been characterized by means of X-ray L3-adsorption spectroscopy. It was established that Eu3+ forms two types of optical centers. Besides, luminescence of Eu2+ions was found. Reduction Eu3+#->#Eu2+ was considered, which may be due to VSr|| vacancy formation in the 4f crystal lattice position and to negative charge transfer by this vacancy to two EuY3+ ions. Thus, in the silicate lattice there exist inhomogeneously distributed oxygen-deficient centers, which are responsible for nonradiative transfer of excitation energy to Eu3+ and Eu2+ ions. To study electron-vibrational interactions in the crystal phosphor samples, their IR and Raman spectra were examined. In the luminescence spectrum of Eu2+, a series of low-intensity ...

International Nuclear Information System (INIS)

... electron reactions electrons excitation inelastic scattering m1-transitions proton

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... THESIS PARTICLE-SIZING SYSTEM FOR SCANNING ELECTRON MICROSCOPE IMAGES OF SOLID-PROPELLANT COMBUSTION EXHAUST ...

Science.gov (United States)

... attachment tube which is sketched in Fig. 1. It is mounted inside a cylindrical evacuated tube. A beam of thermal electrons ...

International Nuclear Information System (INIS)

In 1999, the plasma parameters of reversed shear (RS) plasmas had been extended in 1) DT-equivalent fusion power gain Q_D_T"e"q - 0.5 (n_D(0)#tau#_ET_i(0) - 4x10"2"0 m"-"3#centre dot#keV#centre dot#s) for 0.8 s and 2) full non-inductive current drive with 80% of the bootstrap current fraction. Physics of the internal transport barriers (ITBs) in RS plasmas, including the energy transport and the formation of ITB, were extensively studied. A nearly full current drive (92% non-inductively) was obtained with negative ion based neutral beam (NNB) injection (360 keV, 3.4 MW) in a high #beta#_p H-mode plasma (I_p=1.5 MA, B_T=3.7 T, q_9_5=4.2) with high plasma performance (#beta#_N=2.4 and H_8_9=2.56). Rise in the central electron temperature (T_e - 9 keV) resulted in the current drive efficiency #eta#_C_D of NNB reached 1.3x10"1"9 A/W/m"2, the highest for the neutral beam current drive. As for the H-mode plasmas, decrease in the pedestal ion ...

British Library Electronic Table of Contents (United Kingdom)

Objective To investigate value of magnetic resonance cholangiopancreatography (MRCP) using oral diluted gadolinium (Gd)-diethylenetriamine penta-acetic acid (DTPA) as negative contrast materials in diagnosis of juxtapapillary duodenal diverticulum with atypical imaging features. Methods Nineteen patients with juxtapapillary duodenal diverticula of which imaging findings were atypical underwent MRCP using oral diluted Gd-DTPA as negative contrast materials after conventional MRCP without any oral contrast materials. Results Twenty diverticula were revealed in the 19 patients. At conventional MRCP, the diverticula appeared as rounded lesion with high signal intensity. After oral administration of diluted Gd-DTPA, they disappeared at MRCP. These entities were diagnosed as duodenal diverticula...

British Library Electronic Table of Contents (United Kingdom)

Purpose To evaluate disease failure patterns and overall survival (OS) of women with triple-negative (TN) breast cancer who underwent breast-conserving therapy (BCT) and to understand the relationship of TN tumors with other prognostic factors. Patients and Methods The Surveillance, Epidemiology, and End Results (SEER) registry identified 562 women diagnosed and/or treated with unilateral invasive breast cancer during 2003?2004 at three Emory hospitals. After medical record review, 193 eligible women, with all tumor types, received BCT. Primary endpoints (local, regional, and distant recurrences) and secondary endpoint (OS) were evaluated using chi-square tests and Cox proportional hazards models. Results Of the 193 women, 33 (17.1%) had TN tumors and 160 (82.9%) had non-TN tumors. Patient...

British Library Electronic Table of Contents (United Kingdom)

The world of antibiotic drug discovery and development is driven by the necessity to overcome antibiotic resistance in common Gram-positive and Gram-negative pathogens. However, the lack of Gram-negative activity among both recently approved antibiotics and compounds in the developmental pipeline is a general trend despite the fact that the plethora of covered drug targets are well-conserved across the bacterial kingdom. Such intrinsic resistance in Gram-negative bacteria is largely attributed to the activity of multidrug resistance (MDR) efflux pumps. Moreover, these pumps also play a significant role in acquired clinical resistance. Together, these considerations make efflux pumps attractive targets for inhibition in that the resultant efflux pump inhibitor (EPI)/antibiotic combination d...

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A concept of direct energy recovery system applying an alternating or rotating magnetic field is proposed for a negative-ion-based neutral beam injection system (NNB) to heat a plasma and/or drive a plasma current in a fusion reactor. Nearly same amounts of residual positive and negative hydrogen-isotope ion beams with beam energy of {approx}1 MeV are produced in an NNB using a gas neutralizing cell. Consequently, a recovered energy is obtained directly in the form of ac electric power, if these positive- and negative-ion beams are alternated or rotated and introduced to two or more recovery electrodes in turn by an alternating or rotating magnetic field. This concept will greatly reduce a technological difficulty in regeneration of a recovered electric energy with such a very high voltage. (author).

Science.gov (United States)

For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of increasing the flow rate of H/sub 2/ gas in ...

Energy Technology Data Exchange (ETDEWEB)

Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell with a 1-sun AM1.5 efficiency of 20.3%. Also, an inverted-grown, ...

International Nuclear Information System (INIS)

Atoms in very high Rydberg states, 100 approx-lt n approx-lt 1100, are used to investigate electron-molecule interactions at electron energies extending down to a few microelectronvolts. At such energies the cross section for electron capture by CCl_4 is observed to vary inversely with electron velocity, indicative of an s-wave process. Studies with the polar target CH_3Cl suggest that dipole-supported states may be important in inelastic electron-polar molecule scattering at very low electron energies.

UK PubMed Central (United Kingdom)

Borna disease virus (BDV) uses a unique strategy of replication and transcription which takes place in the nucleus, unlike other known, nonsegmented, negative-stranded RNA viruses of animal origin....Full Text Available

UK PubMed Central (United Kingdom)

Many bacteria, both gram positive and gram negative, extrude in an energy-dependent manner the fluorescent pH indicator 2',7'-bis-(2-carboxyethyl)-5[and -6]-carboxyfluorescein (BCECF) (D. Molenaar,...Full Text Available

UK PubMed Central (United Kingdom)

The role of IGF-I in the negative regulation of GH expression and release is demonstrated by in vitro and in vivo models; however, the targets and mechanisms of IGF-I...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundSeverely disabling chronic pain in the adult population is strongly associated with a range of negative health consequences for individuals and high health care costs,...Full Text Available

UK PubMed Central (United Kingdom)

The Neurofibromatosis-2 (NF2) tumor suppressor merlin negatively regulates cell proliferation in numerous cell types. We have previously shown that the NF2...Full Text Available

UK PubMed Central (United Kingdom)

The properties of an atypical Brucella strain isolated from lymph node tissue of a cow slaughtered as a brucellosis reactor were examined. The organism was Gram negative and highly pleomorphic, existing...Full Text Available

International Nuclear Information System (INIS)

It is proven that there do not exist any diagonal Bianchi type-IX universes which expand for an infinite time, provided only that the matter satisfies the dominant energy condition and has non-negative average principal pressures.

UK PubMed Central (United Kingdom)

Rapamycin inhibits the mTOR (target of rapamycin) pathway and extends lifespan in multiple species. The tuberous sclerosis complex (TSC) protein is a negative regulator of mTOR. In humans, loss of the...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundThe genus Vibrio is a diverse group of Gram-negative bacteria comprised of 74 species. Furthermore, the genus has and is expected to continue expanding...Full Text Available