International Nuclear Information System (INIS)

Single-crystalline PbTe nanowires were synthesized using the chemical vapor transport method. They consisted of rock-salt structure PbTe nanocrystals uniformly grown in the [100] direction. We fabricated field-effect transistors using a single PbTe nanowire, providing evidence for its intrinsic n-type semiconductor characteristics. The values of the carrier mobility and concentration were estimated to be 0.83 cm"2 V"-"1 s"-"1 and 8.8 x 10"1"7 cm"-"3, respectively. The Seebeck coefficients (-72 ?V K"-"1) of individual nanowires were measured to show their n-type carrier-dominated thermoelectric transport properties.

Energy Technology Data Exchange (ETDEWEB)

Arrays of CdS:Mn{sup 2+}:Cu{sup +} micro- and nanowires grown in polycarbonate ion-track templates exhibit photoluminescence in the spectral domain ranging from 500 to 800 nm at room temperature. A comparison with similar CdS and CdS:Mn{sup 2+} wire arrays is presented. The individual contributions to the emission spectra of Cu{sup +} and Mn{sup 2+} ions in the CdS matrix are explained using their energy level schemes. Also SEM, EDX and EPR data are given for these wires. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Science.gov (United States)

We present a new approach for growing Si nanowires directly from a silicon substrate, without the use of a metal catalyst, silicon vapor or CVD gasses. The growth can be performed in a furnace type configuration at moderate temperatures or in localized regions by resistive heating. Since the silicon wires grow directly from the silicon substrate, they do not need to be manipulated nor aligned for subsequent applications. Wires in the 20-50 nm diameter range with lengths over 80 ?m can be grown by this technique. We have studied the effects of various growth parameters, including temperature, substrate orientation, initial sample cleaning and carrier gasses. Results indicate that most important parameters in the growth of the nanowires are the surface cleaning, the temperature and the type of carrier gas used. A model is proposed, which involves an oxide catalyst for the process, with the growth of the ...

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

Energy Technology Data Exchange (ETDEWEB)

The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.

Energy Technology Data Exchange (ETDEWEB)

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs solar cell on ...

International Nuclear Information System (INIS)

Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift mobility, surface band bending, and surface capture coefficient for electrons. Samples grown (unintentionally n-type) by nitrogen-plasma-assisted molecular beam epitaxy primarily from two separate growth runs were examined. The results revealed carrier concentration in the range of (3-6)x10"1"6 cm"-"3 for one growth run, roughly 5x10"1"4-1x10"1"5 cm"-"3 for the second, and drift mobility in the range of 500-700 cm"2/(V s) for both. Nanowires were dispersed onto insulating substrates and contacted forming single-wire, two-terminal structures with typical electrode gaps of #approx =#3-5 #mu#m. When biased at 1 V bias and illuminated at 360 nm (3.6 mW/cm"2) the thinner (#approx =#100 nm diameter) nanowires with the higher ...

Energy Technology Data Exchange (ETDEWEB)

Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.

Energy Technology Data Exchange (ETDEWEB)

The temperature dependence of the spontaneous magnetization of epitaxial iron films with a thickness ranging from d=20 to 200nm has been measured. The films are grown on GaAs (100) substrates which are covered by a 150nm thick silver (100) buffer layer. For three-dimensional BCC iron it was observed already in 1929 that saturation of the spontaneous magnetization for T->0 is perfectly described by a T{sup 2} power law. On the other hand, for thin two-dimensional (2D) iron films a T{sup 3/2} law has been established in many recent experimental investigations. In our iron films grown on diamagnetic silver, this dimensionality change occurs at a thickness between d=100 and 200nm. Comparison of the here-observed T{sup 3/2} coefficients with those on iron films grown on paramagnetic tungsten (110) shows that the 2D interactions are {approx}20 times larger in the films on tungsten. Recent results on Fe ...

International Nuclear Information System (INIS)

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

International Nuclear Information System (INIS)

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

CERN Document Server

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ...

Energy Technology Data Exchange (ETDEWEB)

Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

Energy Technology Data Exchange (ETDEWEB)

Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

International Nuclear Information System (INIS)

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

International Nuclear Information System (INIS)

The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.

Energy Technology Data Exchange (ETDEWEB)

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

International Nuclear Information System (INIS)

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, ...

Science.gov (United States)

For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of ...

Energy Technology Data Exchange (ETDEWEB)

This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron ...

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack ...

Science.gov (United States)

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of InGaP/InGaAlP MQW ...

International Nuclear Information System (INIS)

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first observation of strain-enhanced electron spin ...

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical ...

International Nuclear Information System (INIS)

The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range of 1#centre dot#10"1"7 cm"-"3 - 10"1"8 cm"-"3. (author)

Science.gov (United States)

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

Energy Technology Data Exchange (ETDEWEB)

The pressure dependence of the photoluminescence (PL) transition associated with the fundamental band gap of ZnO nanowires has been studied at pressures up to 15 GPa. ZnO nanowires are found to have a higher structural phase transition pressure around 12 GPa as compared to 9.0 GPa for bulk ZnO. The pressure-induced energy shift of the near band-edge luminescence emission yields a linear pressure coefficient of 29.6 meV/GPa with a small sublinear term of -0.43 meV/GPa{sup 2}. An effective hydrostatic deformation potential -3.97 eV for the direct band gap of the ZnO nanowires is derived from the result.

Science.gov (United States)

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a ...

Science.gov (United States)

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for ...

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Science.gov (United States)

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates. PMID:17595151

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

British Library Electronic Table of Contents (United Kingdom)

Crystalline ?-Al2O3 nanowires with diameter, 20?40?nm, length above 600?nm and aspect ratio above 30 have been successfully synthesized by thermal decomposition of boehmite (?-AlOOH) precursors obtained via hydrothermal route by using AlCl3, NaOH and NH3 as starting materials. Thermogravimetric analysis (TG), differential thermal analysis (DTA), X-ray diffraction (XRD), transmission electron microscope (TEM), selected area electron diffraction (SAED) and high resolution transmission electron microscope (HRTEM) were used to characterize the features of the as-made ?-Al2O3 nanowires and their ?-AlOOH precursors. The pH value of the solution and the mixed precipitant play important roles in the formation of ?-AlOOH nanowires. After calcination at 500?C for 2?h, the orthorhombic ?-AlOOH transf...

Science.gov (United States)

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser projection displays, holographic memories, and plastic fiber ...

Energy Technology Data Exchange (ETDEWEB)

Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to n type Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of {approximately} 6 {times} 10{sup {minus}6} {Omega}-cm{sup 2} and {approximately} 1 {times} 10{sup {minus}5} {Omega}-cm{sup 2} have been obtained on Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P respectively (both doped to {approximately} 2 {times} 10{sup 18} cm{sup {minus}3}). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al{sub 0.5}In{sub 0.5}P and n-Ga{sub 0.5}In{sub 0.5}P are presented.

Science.gov (United States)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are ...

Science.gov (United States)

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a GaInP active layer was found to depend on growth conditions and dopant behaviour during the growth, and it varied ...

CERN Document Server

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2p sub 3 sub / sub 2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga sub 2 O sub 3 powder were used. A separate study aiming the identification of the GaAs surface oxides formed on the GaAs surface during and after ...

International Nuclear Information System (INIS)

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga"+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).

Energy Technology Data Exchange (ETDEWEB)

The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

KoreaScience (Korea)

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ObjectivesFor thermoelectricity both low thermal conductivity and high electrical conductivity are required. High electrical conductivity should be established via a high carriers concentration and a high mobility.~%~The aim of this feasibility study is to investigate a method of modulation doping of Si nanowires in order to generate high carrier concentrations without the need for impurity doping, thus retaining high mobilities.~%~~%~The objectives are (in chronological order):~%~- reduction of the wire [continued...]DescriptionIn recent years, the increasing dependence of society on fossil fuels for socio-economical development has become a cause of great concern. The possibility of a reduced availability of fossil fuels, and the effect of these fuels on climate change, have encouraged research into alternative energy sources. Many of these alternatives are old ideas, implemented using modern techniques. This proposal plans to investigate the ...

British Library Electronic Table of Contents (United Kingdom)

In this paper we demonstrate the electrodeposition of nickel, a common ferromagnetic material, in various magnetically desirable shapes including nanowires, nanoparticles and highly faceted shells. In order to obtain three dimensional mesostructures, the electrochemical deposition of nickel was performed on highly oriented pyrolytic graphite (HOPG) under different electrolyte composition and deposition potential conditions. Under potentiostatic deposition at one distinct potential negative with respect to the reversible potential of nickel, three stages of nucleation and growth take place leading to a complex morphology of deposits. However, dual-pulse potential deposition and electrodeposition in low pH solutions causing hydrogen evolution, lead to nickel deposits in the form of nanowires...

British Library Electronic Table of Contents (United Kingdom)

An electrochemical biosensor for determination of hydrogen peroxide (H2O2) was fabricated, based on the electrostatic immobilization of horseradish peroxidase (HRP) with one-dimensional gold nanowires (Au NWs) and TiO2 nanoparticles (nano-TiO2) on a gold electrode. The nano-TiO2 can give a biocompatible microenvironment and compact film, and the Au NWs can provide fast electron transferring rate and greatly add the amount of HRP molecules immobilized on the electrode surface. Au NWs were characterized by ultraviolet?visible spectra and transmission electron microscope. The electrode modification process was probed by cyclic voltammetry and electrochemical impedance spectroscopy. Chronoamperometry was used to study the electrochemical performance of the resulting biosensor. Under optimal co...

International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

Energy Technology Data Exchange (ETDEWEB)

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE ...

Science.gov (United States)

A doubly Q-switched laser with both an acousto-optic (AO) modulator and a GaAs saturable absorber can obtain a more symmetric and shorter pulse with high pulse peak power, which has been experimentally proved. The key parameters of an optimally coupled doubly Q-switched laser with both an AO modulator and a GaAs saturable absorber are determined, and a group of general curves are generated for what we believe is the first time, when the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined, and the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density as well as the influence of the AO Q-switch are considered. These key parameters include the optimal normalized coupling parameter, the optimal normalized GaAs saturable absorber parameters, and the normalized parameters of the AO Q-switch, which can maximize ...

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

Science.gov (United States)

CuPt-type ordering in In{sub 0.49}Al{sub 0.51}P is studied by TEM. The lattice-matched film was grown by MOCVD on a GaAs substrate oriented 10{sup o} off (001) towards [110], at 650 C and 25 nm/min. TEM [110] and [1{bar 1}0] cross-sections (XS) were made by wedge polishing and 2 kV Ar ion milling. In CuPt-type ordering of In{sub 0.52}Ga{sub 0.48}P, alternating In-Ga-In-Ga {l_brace}111{r_brace} planes of group III atoms produce 1/2 {bar 1}11 and 1/2 1{bar 1}1 order spots in the 110 SADP, while the [1{bar 1}0] SADP shows no order spots [1-3]. A few studies have reported this type of order in In{sub 0.49}Al{sub 0.51}P [4]. The 004 BF image of the [1{bar 1}0] XS in Fig. 1 shows uneven light/dark contrast modulation due to phase separation often observed in In{sub 0.52}Ga{sub 0.48}P. There are also light/dark layers marked ML parallel to the film growth plane; such unintentional multilayers have also been observed [5] but their origin is not ...

International Nuclear Information System (INIS)

Bulgarian 1974. Bulgaria Gramatikova, Kh. Salcheva, G. Bylgarska Akademiya

Energy Technology Data Exchange (ETDEWEB)

GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup 2}-area GaAs cell on ...

Science.gov (United States)

Direct coupljng between Al and Au metal]jzations can result in an increase in gate resistance due to a metallurgical reaction. (purple plague). An RF life test on ...

Energy Technology Data Exchange (ETDEWEB)

In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Nano-wire arrays of Niobium were produced by small angle sputtering on facetted sapphire, using the self shadowing effect of the facets. A wire width of about 80 nm was adjusted, the mean (maximum) wire height was about 20 nm (30 nm), the length can be in the cm range. Meander-film morphologies of 20 nm mean (26 nm maximum) thickness were produced by conventional sputtering onto smooth sapphire substrates at elevated temperatures. The morphology of the wires was investigated with atomic force microscopy (AFM), using contact mode. Meander-films were studied by scanning tunnelling microscopy (STM). Hydrogen loading was performed by instantaneously increasing the hydrogen gas pressure above the solubility limit. Thus, an elongated hydride could be monitored in an about 30 nm thick wire. STM studies on meander-films show the presence of cylindrical hydrides. Local out-of-plane and in-plane expansion can be explained by the formation of hydrides, being coherent with the ...

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

Science.gov (United States)

We have designed a new nucleobase, benzodeazaadenine (BDA) that has a stronger charge transport ability than guanine and is not destroyed during charge transport process. By incorporating this new nucleobase into DNA, we demonstrated a protocol for real DNA nano-wire that is far superior to natural DNA. We also demonstrated that the selectivity for the interaction of Mn(II) ion with guanine N7 in G runs is a HOMO-controlled process, and as a consequence, the selectivity for G-metal ion interactions obtained by 15N-NMR studies would directly reflect the HOMO distribution of G-containing sequences in B-DNA. PMID:12903077

UK PubMed Central (United Kingdom)

Fungal and oomycete populations and their dynamics were investigated following the introduction of the biocontrol agent Pythium oligandrum into the rhizosphere of tomato plants grown...Full Text Available

Science.gov (United States)

... Strains Smith and -aybush were both grown in broth containing from 0.1 to 50 pg/ml of acriflavin, acridine orange, or proflavin. ...

Science.gov (United States)

... Abstract : Single crystals of Pb(x)Sn(1-x)Te alloy have been grown with o = or thin film evaporator. ...

Energy Technology Data Exchange (ETDEWEB)

The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native oxide--hydrocarbon layer during the Ni/GaAs, Pd/GaAs, and Pt/GaAs reactions is also investigated. Only the ...

Science.gov (United States)

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

Science.gov (United States)

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

International Nuclear Information System (INIS)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.

International Nuclear Information System (INIS)

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

International Nuclear Information System (INIS)

Deep level effects in GaAs MOSFET have been characterised in the ohmic channel using DLTS, low frequency excess noise and dispersion technique. An isothermal multi exponential curve fitting method has been devised and implanted into the DLTS system. Multi exponential curve fitting method used to decompose a multi exponential transient into its constituents so that the peak signature can be better characterised for the case whereas several peaks are closely spaced. Low frequency excess noise and dispersion techniques also confirm the trap in signature of the same traps observed in the DLTS measurements. (author)

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

Science.gov (United States)

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

Science.gov (United States)

Photoacoustic microscopy (PAM) offers label-free, optical absorption contrast. A high-speed, high-resolution PAM system in an inverted microscope configuration with a laser pulse repetition rate of 100,000 Hz and a stationary ultrasonic transducer was built. Four-dimensional in vivo imaging of microcirculation in mouse skin was achieved at 18 three-dimensional volumes per second with repeated two-dimensional raster scans of 100 by 50 points. The corresponding twodimensional B-scan (50 A-lines) frame rate was 1800 Hz, and the one-dimensional A-scan rate was 90,000 Hz. The lateral resolution is 0.23+/-0.03 ?m for Au nano-wire imaging, which is 2.0 times below the diffraction limit.

International Nuclear Information System (INIS)

Single crystals of semi-organic L-histidine hydrobromide have been grown by slow evaporation technique from a mixture of L-histidine and hydrobromic acid in aqueous solution at ambient temperature. From high-resolution X-ray diffraction analysis, the crystalline perfection of the grown crystal has been studied. Single crystal X-ray diffraction analyses, Nuclear Magnetic Resonance spectral analysis, Thermo-Gravimetry (TG), Differential Thermal Analysis (DTA) and hardness test have been employed to characterize the as-grown crystals. The UV cutoff wavelength of the grown crystal is below 300 nm and has a wide transparency window, which is suitable for second harmonic generation of laser in the blue region. Nonlinear optical characteristics have been studied using Q switched Nd:YAG laser (#lambda#=1064 nm). The second harmonic generation conversion efficiency of the grown crystals ...

Energy Technology Data Exchange (ETDEWEB)

The article is the second part of a review dealing with latest developments in the area of solar cell technologies and application. Physical principles, design and efficiency as well as advantages and disadvantages of GaAs- and CdS-solar cells are described. Power generation solar cell systems with voltage converters, combined solar cell/solar collector systems and thermoelectric solar systems are presented in the second part of the article.

UK PubMed Central (United Kingdom)

An unusual S1-nuclease sensitive microsatellite (STMS) has been found in the single copy, rat polymeric immunoglobulin receptor gene (PIGR) terminal exon. In Fisher rats, elements within or beyond the...Full Text Available

International Nuclear Information System (INIS)

Nanometre-sized materials, like nanowires, nanoparticles or nanobelts, are gaining huge interest as building blocks of modern electronic nanodevices. Their fabrication feasibility has been demonstrated in the last years, and different routes are already well established in order to synthesize these materials. However, the assessment of their electrical properties is still a challenging issue, due to the difficulty to perform a precise nanolithography process allowing the access to such small structures. The fabrication of metallic contacts with precision in the nanometre range is necessary, as well as achieving a flexible system that allows to contact individual structures. Such a system could be a dual-beam Focused Ion Beam instrument, which combines Scanning Electron Microscopy (SEM) and Focused Ion Beam (FIB) in one machine, able to assist deposition of materials with nanometre precision. In this work, the methodology of fabrication of metallic nanocontacts to ...

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...qualified and who were under consideration at the time, USDA Secretary Tom Vilsack chose an animal husbandry specialist employed by one of the largest organic livestock product marketers in the country. While this appointee had grown up on a conventional farm, her immediate occupation is not that of ...

UK PubMed Central (United Kingdom)

We have investigated the transport of tritiated indole-3-acetic acid (IAA) in intact, red light-grown maize (Zea mays) coleoptiles during gravitropic induction and the subsequent development...Full Text Available

UK PubMed Central (United Kingdom)

An enzyme active against carboxymethyl cellulose (CMC) was purified from the stationary-phase-culture supernatant of Clostridium josui grown in a medium containing ball-milled cellulose. The purification...Full Text Available

UK PubMed Central (United Kingdom)

Moderate doses of red (660 nanometer) irradiation cause a rapid increase in the translocation of fluorescein in dark-grown mung bean hypocotyl (Vigna radiata L.) segments. The increase...Full Text Available

UK PubMed Central (United Kingdom)

There has been great interest in understanding the methods by which collagen-based load-bearing tissue is constructed, grown and maintained in vertebrate animals. To date, the responsibility for this...Full Text Available

UK PubMed Central (United Kingdom)

Dramatic differences in the height of lima beans (Phaseolus lunatus L.) treated with two different Rhizobium strains were studied. Lima beans were grown in Perlite...Full Text Available

UK PubMed Central (United Kingdom)

Lactobacillus buchneri ST2A vigorously decarboxylates histidine to the biogenic amine histamine, which is excreted into the medium. Cells grown in the presence of histidine generate both a transmembrane...Full Text Available

UK PubMed Central (United Kingdom)

Over the last several years, as cesarean deliveries have grown increasingly common, there has been a great deal of public and professional interest in the phenomenon of women ‘choosing’...Full Text Available

UK PubMed Central (United Kingdom)

Growth of the malolactic bacterium Leuconostoc oenos was improved with respect to both the specific growth rate and the biomass yield during the fermentation of glucose-malate mixtures as compared with...Full Text Available

International Nuclear Information System (INIS)

This investigation clearly demonstrates that through partial impregnation techniques wood-polymer composites can be formed from the Pinus species grown in South Africa with a considerable saving in monomer costs without sacrificing the important physical properties of these materials.

Energy Technology Data Exchange (ETDEWEB)

The Heusler alloy Ni{sub 2}MnIn is a promising material as spin injector because of its predicted half-metallicity at the interface to InAs. We grow thin films of this Heusler alloy by thermal coevaporation of Nickel and the alloy MnIn. The alloy is grown on Si{sub 3}N{sub 4} membranes and amorphous carbon films for transmission-electron microscopy (TEM) as well as on Si and InAs. The degree of the transport spin polarization of the films grown on Si(100), InAs(100) and in-situ cleaved (110) surfaces of InAs is determined by point-contact Andreev reflection spectroscopy (PCAR). The almost perfect lattice match between InAs and Ni{sub 2}MnIn supports highly oriented growth, as we have proven by electron diffraction under grazing incidence. Lateral spin valves with Heusler electrodes are lithographically defined. In view of the temperature-sensitivity of the optical and electron-beam resists, the samples are grown at ...

UK PubMed Central (United Kingdom)

Aerobacter cloacae UW-C83 and Escherichia coli K-12 were grown under various anaerobic environments. Y_atp values were calculated by determination...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.

Energy Technology Data Exchange (ETDEWEB)

White beam Laue micro-diffraction was performed on directionally solidified, single-crystal Mo pillars in the as-grown state, after focused ion beam (FIB) milling and after pre-straining. The Laue diffraction peaks from the as-grown pillars are very sharp and show no broadening, similar to those from single-crystal Si wafers. Significant broadening and streaking of the peaks occurred after FIB milling and pre-straining, indicative of the damage these treatments induce in the nearly perfect crystal structure of the directionally solidified Mo pillars.

International Nuclear Information System (INIS)

Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 A within 3000 A wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier-carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in InGaAs but may be due to stimulated emission in InGaAsN. The results reveal that the carrier dynamics is ...

International Nuclear Information System (INIS)

We have investigated the characteristics of ion-beam-induced spontaneous etching (IBISE) of GaAs in Cl_2 ambient by using a Ga-focused ion beam (FIB) with an energy ranging from 3 to 15 keV. The etched depth of the irradiated region was more than 20 times greater than that of unirradiated region. When the sputtered depth by FIB irradiation amounted to around 8 A at each ion energy, the etched depth in Cl_2 ambient for 1 hour became saturated. The saturated etched depths were 450, 550, 750 and 800 A at the ion energy of 3, 5, 10 and 15 keV, respectively. The residual damage of the etched surface was also investigated by photoluminescence (PL) measurement. The maximal PL intensity was obtained at around the threshold dose of IBISE and increased with decreasing ion energy. The full recovery of PL intensity was observed at the ion energy of 3 keV after annealing at 400degC. (author).

International Nuclear Information System (INIS)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K_#alpha# X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K_#alpha# X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the conditions necessary for ...

International Nuclear Information System (INIS)

Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that by N2 plasma.

Energy Technology Data Exchange (ETDEWEB)

A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

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A review is given of the state-of-the-art of single and polycrystalline solar cells, which includes a short theoretical review, laboratory achievements, and production methods. The Si single and polycrystalline cell and the amorphous Si cell are described, including material preparation, crystal and sheet growth, and cell and panel production. Promising second generation thin film solar cells including GaAs, CdS(CuInSe/sub 2/), and CdTe are briefly described. Economical aspects are discussed.

Energy Technology Data Exchange (ETDEWEB)

A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

Science.gov (United States)

The Energy crisis happens to be one of the greatest challenges we are facing today. In this view, much effort has been made in developing new, cost effective, environmentally friendly energy conversion and storage devices. The performance of such devices is fundamentally related to material properties. Hence, innovative materials engineering is important in solving the energy crisis problem. One such innovation in materials engineering is porous materials for energy storage. Porous electrode materials for lithium-ion batteries (LIBs) offer a high degree of electrolyte-electrode wettability, thus enhancing the electrochemical activity within the material. Among the porous materials, mesoporous materials draw special attention, owing to shorter diffusion lengths for Li+ and electronic movement. Nanostructured mesoporous materials also offer better packing density compared to their nanostructured counterparts such as nanopowders, nanowires, nanotubes etc., thus ...

Energy Technology Data Exchange (ETDEWEB)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

Science.gov (United States)

In an earlier paper (Phys. Rev. Lett. 66, 41 (1991)), we calculated both the dielectric constant ({epsilon}{sub {infinity}}) and the nonlinear optical susceptibilities for second-harmonic generation ({chi}{sup (2)}) in the static limit for AlP, AlAs, GaP, and GaAs in the local-density approximation with and without a self-energy correction in the form of a scissors operator,'' including local-field effects. In this paper, we expand our presentation of this calculation. Agreement with experiment to within 15% for the nonlinear susceptibility is demonstrated where experiments are available (GaP and GaAs); the dielectric constants are in no worse than 4% agreement with experiment. The virtual hole'' contributions are reformulated to avoid large numerical cancellations in the case of near degeneracies. The virtual electron'' terms dominate over the virtual hole'' terms ...

Energy Technology Data Exchange (ETDEWEB)

Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.

Science.gov (United States)

Photorefractives, in general, are among the most promising materials solutions to real time optical correlation. Applications include military target recognition and civilian robotic vision. Crystals of sillenite structure photorefractives, Bi12XO20, where X equals Si, Ge, or Ti, have been grown by melt techniques and in the case of bismuth silicon oxide (BSO) and bismuth titanium oxide (BTO) by the hydrothermal method of high-temperature/high-pressure solution growth. The two growth methods are discussed and crystals grown by the two methods are compared in this paper. Optical absorption and TSC studies show that hydrothermal BSO is essentially free of the native antisite Bi defect which usually acts as a donor. These studies also show that the trap density is greatly reduced in hydrothermal material. Preliminary experiments show that hydrothermal BTO crystals have improved properties over melt grown samples. Al and P act ...

Science.gov (United States)

Continuous wave operation of an Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P /Ga/sub 0.52/In/sub 0.48/P /Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 ..mu..m and the threshold current was 55 mA for a diode with a nitride-insulated, 8-..mu..m-wide and 250-..mu..m-long stripe geometry.

Science.gov (United States)

Room-temperature continuous-wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 /sup 0/C for a device with an 8-..mu..m-wide and a 250-..mu..m-long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T/sub 0/ was 138 K under cw operation. The wafer with the MQW structure composed of 100-A-thick GaInP wells and 40-A-thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.

International Nuclear Information System (INIS)

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

British Library Electronic Table of Contents (United Kingdom)

Pots used for experiments conducted on plants grown in them create rooting environments that are affected by limited soil volume, which can affect various physiological processes, including transpiration, and plant growth. However, the applicability of results from pot experiments to the field has received limited attention. The objective of this study was to compare the growth and transpiration of maize (Zea mays L.) and winter wheat (Triticum aestivum L.) when grown in pots and field plots under various constant water deficits. The experiments were conducted under similar environmental conditions for both pots and plots. Transpirational responses at both transient (RTTr) and daily (RDTr) time scales to a decreasing fraction of available soil water (FASW) were analyzed. For a comparable F...

Energy Technology Data Exchange (ETDEWEB)

Epitaxial films grown pseudomorphically on substrates provide a way to stabilise non-equilibrium structures of materials. Obviously, there always is a certain lattice misfit between substrate and film material in its bulk equilibrium structure. In the pseudomorphic regime, this misfit can either lead to the growth of films in a strained bulk structure or even yield structures that are not stable in the bulk. Large misfits do not necessarily imply large lateral stress. Theory can help to predict e.g. geometry, stress and magnetic properties of pseusomorphically grown metal films. In this work, we considered the fcc-bcc epitaxial Bain path of 3d, 4d, and 5d transition metals, which provides a reasonable description of tetragonally distorted films on substrates. We carried out density functional calculations in the implementation of the full potential local orbital program package FPLO. Emphasis is put on similarities among the transition metals.

International Nuclear Information System (INIS)

Lupinus albus L. plants were grown from seeds and irradiated at various stages of development with acute or chronic gamma rays. All plants were greenhouse grown (pre- and post-irradiation) and allowed to proceed through their normal growth cycle. The purpose of these experiments was to establish a Plactochron Index for Lupinus albus L. and to determine the effects of acute and chronic irradiation on development at the macro and microscopic levels. A Plastochron Index was calculated and used as an indirect time scale to evaluate the effects of gamma rays from a common base line. Acute radiation treatment lasted for a period of a few days, whereas chronic treatment was initiated at the seedling stage and lasted for the entire growth season. Vegetative plants were used to study the effects of acute radiation exposure on apical meristem morphology, Plastochron Index, phyllatoxis and gross morphology.

British Library Electronic Table of Contents (United Kingdom)

In this paper, it is shown that (In1?xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.

Energy Technology Data Exchange (ETDEWEB)

The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The current status of non-silicon photovoltaic solar cells is discussed including the identification of current technical and economic issues and future research directions for potential high efficiency low cost technologies. This review covers such advanced materials as CdS/Cu/sub 2/S, CdS/CuInSe/sub 2/, and GaAs homojunction and heterojunction devices; such emerging materials as InP, Zn/sub 3/P/sub 2/ and CdTe; and liquid junction electrochemical photovoltaic cells. An attempt is made to compare the current relative status of these various technologies and to indicate their near term potential where possible. 105 refs.

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

Science.gov (United States)

A general model for the analysis of metal-semiconductor solar cells is presented. The model takes into account the cell optical properties, carrier recombination effects, semiconductor minority-carrier properties, series resistance, cell thickness, and active surface area. Numerical methods are used to solve the appropriate continuity equations and hence compute the photocurrent density under AMO conditions. The operation of the model is demonstrated using p- and n-type Si and GaAs with Au being taken as the barrier metal. Calculations are presented showing the effect on solar energy conversion efficiency of surface recombination velocity, barrier height, minority-carrier lifetime, barrier metal thickness, collecting grid configuration, and cell thickness. A comparison of practical and computed data for the Au/n-GaAs system yields good agreement. (AIP)

International Nuclear Information System (INIS)

Technetium transfer from soil to edible parts of various agricultural plants is studied with application of the "9"5"mTc radioactive tracer. The samples of agricultural plants were grown on andesol typical for Japan soil. The technetium transfer factor to edible parts of cultivated lettuce was higher as compared to non foliate cultures. Relative low transfer factor were observed for fruit and pod like plants. the transfer factors for root crops were of intermediate value

Energy Technology Data Exchange (ETDEWEB)

Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi{sub 2} layers with the low sheet resistance value as low as congruent with 4.4 ...

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UK PubMed Central (United Kingdom)

Influx and accumulation of K⁺ in barley (Hordeum vulgare L. cv Fergus) roots were measured at two temperatures (10°C and 20°C) in plants which had been grown...Full Text Available

UK PubMed Central (United Kingdom)

Water hyacinth (Eichhornia crassipes [Mart.] Solms) plants were grown in environmental chambers at ambient and enriched CO₂ levels (330 and 600 microliters CO₂...Full Text Available

Science.gov (United States)

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

Energy Technology Data Exchange (ETDEWEB)

sigma-Aminolevulinate dehydratase has been found to be activated in vitro by dithiotreitol and factors isolated from radish cotyledons grown under continuous far-red light. Cross experiments, between fructose 1-6 bisphosphatase system, and sigma-aminolevulinate dehydratase, show that these factors are functionally identical to thioredoxin f.

Energy Technology Data Exchange (ETDEWEB)

We have grown ferroelectric Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films on platinized silicon and LaNiO{sub 3}-buffered nickel substrates by chemical solution deposition using a sol-gel process based on acetic acid chemistry. The following measurements were obtained under zero-bias field: relative permittivity of {approx}960 and dielectric loss of {approx}0.04 on the PLZT film grown on Pt/Si substrates, and relative permittivity of {approx}820 and dielectric loss of {approx}0.06 on the PLZT film grown on LNO-buffered Ni substrates. In addition, a relative permittivity of 125 and dielectric loss of 0.02 were measured at room temperature under a high bias field of 1 x 10{sup 6} V/cm on PLZT deposited on LNO-buffered nickel substrate. Furthermore, a steady-state leakage current density of {approx}8.1 x 10{sup -9} A/cm{sup 2} and mean breakdown field strength of 1.7 x 10{sup 6} V/cm were measured at ...

Energy Technology Data Exchange (ETDEWEB)

Development of electronic devices with better performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The 'film-on-foil' approach is the most viable method for embedding these components within a PWB. We have deposited high-permittivity ferroelectric lead lanthanum zirconate titanate (Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub x}, PLZT 8/52/48) films on base metal foils by chemical solution deposition. These prefabricated capacitor sheets can be embedded into PWBs for power electronic applications. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, a conductive buffer layer of lanthanum nickel oxide (LNO) was applied by chemical solution deposition on nickel foil before the deposition of PLZT. With a {approx} 0.7-{micro}m-thick ferroelectric PLZT film grown on LNO-buffered nickel foil, we measured capacitance densities of 1.5 ...

UK PubMed Central (United Kingdom)

Barley (Hordeum vulgare L. cv Golden Promise) plants were grown in a continuous culture system in which the root and shoot ammonia and amino acid levels were constant over a 6-hour...Full Text Available

Science.gov (United States)

Heterostructures based on AlGaInP alloy compounds are very attractive for visible semiconductor lasers, heterojunction bipolar transistors (HBTs), and high-electron-mobility transistors (HEMTs) lattice matched to GaAs substrates. Several wet etching solutions for AlGaP of different compositions have been studied. Al{sub 0.5}Ga{sub 0.5}P is found to etch in HF, H{sub 3}PO{sub 4}, hyphosphorous acid (HOPH{sub 2}:O), HCl, KOH, and 1% Br{sub 2}-methanol (MeOH). Etching of Al{sub 0.5}Ga{sub 0.5}P in HCl is reaction limited with an activation energy of {approximately}54.4 kJ/mol. At fixed conditions, the etch rates of Al{sub x}Ga{sub 1{minus}x}P vary exponentially with x in HF and HCl, while in 1% Br{sub 2}-MeOH and mixtures of HCl and HNO{sub 3} the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for AlGaP over InGaP or AlInP with high selectivity, while HCl is useful for the reverse case. The use of 1% Br{sub 2}-MeOH ...

Energy Technology Data Exchange (ETDEWEB)

GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias ...

Science.gov (United States)

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced concrete, where the infiltrated CNT network functions as both ...

International Nuclear Information System (INIS)

Molecular beam epitaxy (MBE) grown Ge nanodots are found to come in a clear trimodal island distribution of huts, pyramids, and domes when grown on (001)Si at 550 deg. C. The island types appear in this order as Ge coverage increases and for a certain coverage all three types are found to coexist at this growth temperature. Previously Ge nanodots have mostly been divided into huts and domes at growth temperatures below 600 deg. C, or pyramids and domes above 600 deg. C. The (105) faceted pyramidal and elongated huts and the multifaceted domes are well known, but a distinction has not previously been seen between huts and a separate size distribution of similarly (105)-faceted pyramidal nanodots twice the size of huts, at temperatures below 600 deg. C. The 20-25 nm wide huts also appear to be the smallest obtainable self-assembled Ge dots on (001)Si, in accordance with predictions based on Si_1_-_xGe_x nanodots on (001)Si. They are about a ...

International Nuclear Information System (INIS)

AlGaInP epitaxial layers grown at 690 degree C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the #left brace#111#right brace# directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, finally, forms the columnar structure.

Energy Technology Data Exchange (ETDEWEB)

Rice (Oryza sativa L.) was grown at 330 and 660 {mu}L CO{sub 2} L{sup {minus}1} and at 40/33/37, 34/27/31, and 28/21/25{degree}C day/night/paddy water temperatures respectively. Sucrose phosphate synthase (SPS) activity was measured at saturating substrate concentrations at 59 days after planting. SPS activity increased 2 and 3 fold with increasing CO{sub 2} at 28 and 34{degree}C air temperatures respectively. At 40{degree}C SPS activity decreased by 37% at elevated CO{sub 2} and most plants failed to reach maturity. Similar responses were found in leaf samples taken in the dark. These results indicate that SPS, an enzyme involved in the regulation of C partitioning in leaves, increases in activity at elevated CO{sub 2}. This is in contrast to previous results with soybean. The changes in SPS activity will also be discussed in relation to leaf starch/sucrose ratios.

Energy Technology Data Exchange (ETDEWEB)

In this study, SnO{sub 2} thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (T{sub s} = 440 {sup o}C). The precursors were methanol CH{sub 4}O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T({lambda}) and reflectance R({lambda}) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity {psi}{sub AB}. The obtained value: {psi}{sub AB} {approx} 23.4 m{sup 3} s{sup -1} helped situating the performance of the as-grown SnO{sub 2} compound among most known PV-T oxides like ZnO and TiO{sub 2}.

Energy Technology Data Exchange (ETDEWEB)

Continuous-wave (cw) operation at temperatures up to 23 /sup 0/C of an Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P/Ga/sub 0.52/In/sub 0.48/P/ Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 /sup 0/C for a device with a 10-..mu..m-wide and 250-..mu..m-long ion-implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 /sup 0/C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (approx.0.3 ..mu..m) p-AlGaInP layer and a p-Al/sub 0.76/Ga/sub 0.24/As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.

International Nuclear Information System (INIS)

Experimental observations related to the initiation of plastic deformation in metals and alloys irradiated with fission neutrons have been analyzed. The experimental results, showing irradiation-induced increase in the upper yield stress followed by a yield drop and plastic instability, cannot be explained in terms of conventional dispersed-barrier hardening because (a) the grown-in dislocations are not free, and (b) irradiation-induced defect clusters are not rigid indestructible Orowan obstacles. A new model called 'cascade-induced source hardening' is presented where glissile loops produced directly in cascades are envisaged to decorate the grown-in dislocations so that they cannot act as dislocation sources. The upper yield stress is related to the breakaway stress which is necessary to pull the dislocation away from the clusters/loops decorating it. The magnitude of the breakaway stress has been estimated and is found to be in good ...

International Nuclear Information System (INIS)

GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

International Nuclear Information System (INIS)

Reflectance anisotropy spectroscopy (RAS) has been used, together with scanning tunnelling spectroscopy (STS), to investigate the optical and electronic properties of nanodots formed by depositing Ag on the Si(111)-3 x 1-Ag surface. One-dimensional (1D) arrays of nanodots were grown on a single-domain (3 x 1)-Ag surface and the anisotropic optical response in the 0.5-5 eV range measured by RAS. Aligned, elongated Ag islands were also grown on this surface to compare their properties with those of the nanodots. STS of the Ag islands showed distinct metallic behaviour, whereas the nanodots revealed a bandgap of #approx#0.6 eV, indicating that the surface of the dots has a non-metallic character, similar to that of the Si(111)-3 x 1-Ag surface. RAS also showed substantial differences between the structures, with a large infrared anisotropy for the metallic Ag islands consistent with anisotropic Drude-like intraband transitions, whereas the ...

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method ...

International Nuclear Information System (INIS)

A single plasma process involving three consecutive steps has been developed for producing high gas flow catalytic nanostructures on the electrodes of proton exchange membrane (PEM) fuel cells (FC). Using a high density helicon radio frequency (13.56 MHz) plasma, nickel is sputtered onto a porous carbon support. Changing the background gas from argon to methane/hydrogen allowed 2 ?m long, 37 nm diameter carbon nanofibres (CNFs) to be grown by diffusion through the nickel clusters in a 'tip growth' mechanism at the relatively low temperature of 400 deg. C. The third step involves plasma sputtering of platinum onto the CNFs, resulting in nanoclusters (3-8 nm) being formed on the periphery of the CNFs. Four FC cathodes were synthesized on carbon paper and PTFE/carbon loaded cloth (known as gas diffusion layer, GDL), both with and without CNFs, with the Pt/CNFs nanostructures grown on PTFE/carbon loaded cloth having the best FC performances. ...

Energy Technology Data Exchange (ETDEWEB)

Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

British Library Electronic Table of Contents (United Kingdom)

Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heteros...

Environmental Research Database

ObjectivesThis working group aims to conduct an in-depth analysis and synthesis of the health risks and benefits of producing and consuming your own food in urban areas. It will have a particular focus on urban soil pollutants - including both toxic elements and persistent organic pollutants that can pass up through the food chain or be ingested in soil. It will consider pathways of pollutant transport and deposition and human uptake from urban cultivation. Against the health risks associated with expos [continued...]DescriptionIn the UK there are over 250,000 allotment holders, many in urban areas, and in many city gardens fruit and vegetables are grown, often in regions known to have a legacy of environmental pollution. The activities of cultivating and eating 'home grown' foods holds both risks and benefits, yet the balance of risk and benefits and the resulting net implications for human health have not been clearly established. This has ...

International Nuclear Information System (INIS)

Determination of principal and impurity components in monocrystals of erbium and yttrium formates grown on the basis of high-pure formates from oriental primers, using the method of isothermal evaporation of the salt aqueous solutions with pH 4.4 - 4.5, is described. Er and Y were determined complexonometrically by the titration of the complex with arsenazo 1 by EDTA solution, and formate-ion was determined iodometrically. Impurities were analyzed by atomic-absorption and titrimetric methods. The atomic-absorption method permits to determine in the monocrystal from 1 x 10"-"4 to 5 x 10"-"3 % Mg at relative standard deviation S_r = 0.05; from 1 x 10"-"3 to 2.5 x 10"-"2 % Ca at S_r = 0.07 and from 2 x 0"-"4 to 5 x 10"-"3 % Pb ar S_r = 0.08.

International Nuclear Information System (INIS)

We report a study of the physical characteristics of the pillars of C, Pt and W grown by 10-30 keV Ga focused ion beam (FIB) as a function of Ga ion flux, and present a quantitative analysis of the elements using energy-dispersive analysis of X-rays (EDAX). All the FIB grown pillars exhibit a rough morphology with whisker like protrusions on the cylindrical surface and broadening of the base as compared to the nominal size. For a constant fluence, the height of the pillar initially increases and then reduces after going through a maximum as a function of ion flux in all the cases. The compositional analysis shows good metallic quality for Pt structures but reveals significant contamination of Ga in C and Ga and C in W structures at higher ion fluxes. Explanation to all these observations has been sought in the light of secondary ion and electron effects and the different processes involved which lead to the FIB induced deposition.

International Nuclear Information System (INIS)

In this work we investigate an iron oxide thin film grown with atomic layer deposition for a gas sensor application. The objective is to characterize the structural, chemical, and electrical properties of the film, and to demonstrate its gas-sensitivity. The obtained scanning electron microscopy and atomic force microscopy results indicate that the film has a granular structure and that it has grown mainly on the glass substrate leaving the platinum electrodes uncovered. X-ray diffraction results show that iron oxide is in the #alpha#-Fe_2O_3 (hematite) phase. X-ray photoelectron spectra recorded at elevated temperature imply that the surface iron is mainly in the Fe"3"+ state and that oxygen has two chemical states: one corresponding to the lattice oxygen and the other to adsorbed oxygen species. Electric conductivity has an activation energy of 0.3-0.5 eV and almost Ohmic current-voltage dependency. When exposed to O_2 and CO, a typical ...

Science.gov (United States)

Significant progress has been achieved recently in the growth of Yttrium Calcium Oxyborate (YCOB) crystals. Boules have been grown capable of producing large aperture nonlinear crystal plates suitable for high average power frequency conversion or optical parametric chirped pulse amplification (OPCPA). With a large aperture (5.5 cm x 8.5 cm) YCOB crystal we have demonstrated a record 227 W of 523.5nm light (22.7 J/pulse, 10 Hz, 14 ns). We have also demonstrated the applicability of YCOB for 1053 nm OPCPA.

International Nuclear Information System (INIS)

We have prepared high-quality, single crystals of SmB_6 under various conditions to improve sample quality. We have measured the resistivity and magnetic susceptibility from room to liquid-helium temperatures to sort samples. We have applied pulsed magnetic fields as high as 50 T at temperatures as low as 40 mK while measuring resistivity. Our samples are of higher quality than previously known. All solvent-grown, single-crystal samples should be etched to remove a surface conductivity. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Originally designed exclusively for peak load covering, pumped storage plants are now faced with new challenges brought about by the deregulation of the electricity market and the substantial growth of wind power capacity. Today's pumped storage plants are started more frequently and often for shorter periods of time. The grid controlling tasks have increased the importance of the role played by this type of power plant and improved sales considerably. But the operational demands have grown substantially as well. This paper discusses the ensuing adaptation of power plant operation as well as options available to power plant operators. (orig.)

International Nuclear Information System (INIS)

Single-crystalline CeRh_2Si_2 and CePd_2Si_2 were grown by the Czochralsky pulling method and the temperature dependence of magnetic susceptibility was investigated. The crystalline electric field (CEF) states in each compound were determined by considering the tetragonal CEF Hamiltonian with mean-field approximation. Interactions between Ce"3"+ ion and the surrounding ligands in CeRh_2Si_2 turned out to be strong and highly anisotropic in comparison to CePd_2Si_2. (orig.)

British Library Electronic Table of Contents (United Kingdom)

LUCIFER (Low-background Underground Cryogenic Installation For Elusive Rates) is a new project for the study of neutrinoless Double Beta Decay, based on the technology of scintillating bolometers. These devices promise a very efficient rejection of the alpha background, opening the way to a virtual background-free experiment if candidates with a transition energy higher than 2615 keV are investigated. The baseline candidate for LUCIFER is 82Se. This isotope will be embedded in ZnSe crystals grown with enriched selenium and operated as scintillating bolometers in a low-radioactivity underground dilution refrigerator. In this paper, the LUCIFER concept will be introduced. The sensitivity and the very promising prospects related to this project will be discussed.

International Nuclear Information System (INIS)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd_2Si layers. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

LaAlO{sub 3} and CeO{sub 2} films have been successfully grown using sol-gel precursors. LaAlO{sub 3} precursor solution has been prepared from a metal alkoxide route and spun-cast on a SrTiO{sub 3} (100) single crystal to yield an epitaxial film following pyrolysis at 800{degrees}C in a rapid thermal annealer. A CeO{sub 2} precursor solution has been made using both an aqueous and an alkoxide route.

Energy Technology Data Exchange (ETDEWEB)

Over the past decade, the energy {open_quotes}paper{close_quotes} market has grown into one of the largest traded markets in the world providing hedging instruments for the producer as well as the enduser of energy products. Because banks, stockholders, and other financial providers rely on a borrower`s ability to generate cash flow to repay their investment, borrowers are increasingly turning to the derivatives markets to provide security against one of the most volatile markets in he world. The existence of this market has enhanced the ability of financial institutions to lend with confidence and appropriate aggressiveness to the oil and gas industry.

International Nuclear Information System (INIS)

The ZnO nanorods were used as a template to fabricate nickel nanoclusters by electrodeposition. The ZnO nanorod arrays act as a nano-semiconductor electrode for depositing metallic and magnetic nickel nanoclusters. The growth sites of Ni nanoclusters could be controlled by adjusting the applied potential. Under -1.15 V the Ni nanoclusters could be grown on the tips of ZnO nanorods. On increasing the potential to be more negative the ZnO nanorods were covered by Ni nanoclusters. The magnetic properties of the electrodeposited Ni nanoclusters also evolved with the applied potentials.

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A considerable time can elapse between initial selection of candidate plus trees and harvest of improved seed. The technique showing the greatest promise of shortening this interval is vegetative propagation. Stock plants are grown for two years from seed before the first propagation cycle begins and each plant can be bulked-up 300-500 times over two cycles. An initial stock of 2500 superior Sitka Spruce plants can be multiplied to yield between 300,000 and 750,000 rooted cuttings for forest use within four years from the start of propagation.

International Nuclear Information System (INIS)

A container experiment was conducted to test the hypothesis that uncomposted wool wastes could be used as nutrient source and growth medium constituent for container-grown plants. The treatments were: (1) rate of wool-waste application (0 or unamended control, 20, 40, 80, and 120 g of wool per 8-in. pot), (2) growth medium constituents [(2.1) wool plus perlite, (2.2) wool plus peat, and (2.3) wool plus peat plus perlite], and (3) plant species (basil and Swiss chard). A single addition of 20, 40, 80, or 120 g of wool-waste to Swiss chard (Beta vulgaris L.) and basil (Ocimum basilicum L.) in pots with growth medium provided four harvests of Swiss chard and five harvests of basil. Total basil yield from the five harvests was 1.6-5 times greater than the total yield from the unamended control, while total Swiss chard yield from the four harvests was 2-5 times greater relative to the respective unamended control. The addition of wool-waste to the growth medium ...

International Nuclear Information System (INIS)

High quality single-walled carbon nanotubes (SWNT) have been synthesized at large scales by the method of direct evaporation of carbon black and metallic catalyst mixtures, using induction thermal plasma technology. The processing system consists mainly of an RF plasma torch, which generates a plasma jet of extremely high temperature (?15 000 K), with a high energy density and abundance of reactive species (ions and neutrals). With the present reactor system, it has been demonstrated that carbon soot product which contains approximately 40 wt% of SWNT can be continuously synthesized at the high production rate of ?100 g h-1. The processing parameters involved have been examined closely in order to evaluate their individual influences on SWNT synthesis. The results have shown that the quality and purity of the SWNT produced are critically affected by the grade of carbon black, the plasma gas composition and the metallic catalyst employed. Theoretical calculations, including ...

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The B-Factory which is constructed by National Laboratory for High Energy Physics is the device for elucidating the breakdown of symmetry of matter and antimatter by studying the behavior of B mesons which are generated in large quantity when the electrons and the positrons which are accelerated to light velocity level are collided. In order to maintain electron beam-positron beam bunch circling the ring at light velocity stably, the instability of the coupled bunch must be overcome. For this purpose, the ultrahigh speed beam position digital feedback control system was developed. This system is composed of the high speed input-output substrate using GaAs LSI, the feedback computation substrate using complementary metal oxide semiconductor and the memory mounted on it, and the real time operation device. The development of both substrates and their functions are explained. The real time data collection and the change of computation parameters for specific bunch in ...

International Nuclear Information System (INIS)

Thinning specimens to electron transparency for electron microscopy analysis can be done by conventional (2-4 kV) argon ion milling or focused ion beam (FIB) lift-out techniques. Both these methods tend to leave 'mottling' visible on thin specimen areas, and this is believed to be surface damage caused by ion implantation and amorphisation. A low energy (250-500 V) Argon ion polish has been shown to greatly improve specimen quality for crystalline silicon samples. Here we investigate the preparation of technologically important materials for nanoanalysis using conventional and lift-out methods followed by a low energy polish in a GentleMill"T"M low energy ion mill. We use a low energy, low angle (6-8 deg.) ion beam to remove the surface damage from previous processing steps. We assess this method for the preparation of technologically important materials, such as steel, silicon and GaAs. For these materials the ability to create specimens from specific sites, and ...

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power conversion efficiency of the solar cell.

Science.gov (United States)

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor linearity of the ...

Energy Technology Data Exchange (ETDEWEB)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

British Library Electronic Table of Contents (United Kingdom)

Abstract Visible blue cathodoluminescence (CL), photoluminescence (PL), x-ray excited optical luminescence (XEOL) and electroluminescence (EL) via Zf free excitonic emission have been obtained from CuBr thin films deposited on glass, Cr coated glass, GaAs and Si substrates. In addition to the Zf emission several peaks corresponding to Cu+ emissions via 3d94s - d10 transitions were observed on the AC EL spectrum at 2.10, 2.7, 3.03, 3.07 and 3.80 eV. X-ray diffraction (XRD) measurements confirmed that the vacuum evaporated CuBr thin films grow preferentially with a (111) orientation irrespective of the substrate. While the AC voltage source was found to have no detrimental effects on CuBr thin films, cathodic deposition of Cu metal via electrolytic decomposition was observed under steady sta...

International Nuclear Information System (INIS)

Using standard microfabrication techniques, it is now possible to construct devices that appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date, the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high-frequency operation, have not been tested in detail. We present high-accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single ac-modulated gate at 340 MHz driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a ...

Energy Technology Data Exchange (ETDEWEB)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

Science.gov (United States)

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a technique known as pulsed laser deposition, and ...

International Nuclear Information System (INIS)

The responses of ramets of hybrid poplar (Populus spp.) (HP) clones NE388 and NE359, and seedlings of red maple (Acer rubrum, L.) to ambient ozone (O_3) were studied during May-September of 2000 and 2001 under natural forest conditions and differing natural sunlight exposures (sun, partial shade and full shade). Ambient O_3 concentrations at the study site reached hourly peaks of 109 and 98 ppb in 2000 and 2001, respectively. Monthly 12-h average O_3 concentrations ranged from 32.3 to 52.9 ppb. Weekly 12-h average photosynthetically active radiation (PAR) within the sun, partial shade and full shade plots ranged from 200 to 750, 50 to 180, and 25 to 75 #mu#mol m"-"2 s"-"1, respectively. Ambient O_3 exposure induced visible foliar symptoms on HP NE388 and NE359 in both growing seasons, with more severe injury observed on NE388 than on NE359. Slight foliar symptoms were observed on red maple seedlings during the 2001growing season. Percentage of total leaf area affected (%LAA) was ...

Science.gov (United States)

Biofuels may contribute to both rural economic development and climate change mitigation and adaptation. The Gota Verde Project in Yoro, Honduras, attempts to demonstrate the technical and economic feasibility of small-scale biofuel production for local use by implementing a distinctive approach to feedstock production that encourages small farm sizes, mixed cropping of biofuel feedstock from Jatropha and food crops, particularly corn and beans, grown side by side on the same farmland and the total involvement of small rural farmers. But is the project sustainable? Using EC-Assess, the Earth Charter ethics-based assessment tool, to assess the sustainability of this project, the author found that in some assessment categories the actions surpassed the intended objectives, showing that the project was achieving certain Earth Charter goals without specifically stating its intention to address them. (Contains 3 images, 3 figures and 2 notes.)

International Nuclear Information System (INIS)

The authors report the transient enhanced diffusion of supersaturated phosphorous in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or re-dissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follow their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactiviation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

British Library Electronic Table of Contents (United Kingdom)

MRI (Magnetic resonance imaging) has been widely used in the diagnosis of primary carpal tunnel syndrome (CTS). However, it has had limited clinical application in diagnosing persistent or recurrent CTS. We aimed to investigate the efficacy of this imaging modality in patients who had previously undergone open carpal tunnel release without relief of symptoms, and assess the correlation of MRI with intra-operative findings upon re-exploration. MRI studies were performed on 17 wrists (16 patients) presenting with recurrent/persistent symptoms and signs of CTS in whom repeat nerve conduction studies were also performed. Surgical re-exploration was undertaken on 16 wrists in which a 100% correlation was noted between MRI and intra-operative findings of an incompletely released or re-grown tran...

International Nuclear Information System (INIS)

The presence of washed or unwashed cellophane alone or together with a bleomycin, mitomycin C or hydrochlorothiazide, ('Esidrex') showed no appreciable effect on survival of either unirradiated or irradiated conidia. Irradiation for a period of 20min reduced the survival of conidia to 20%. The growth of irradiated conidia in the presence of bleomycin, mitomycin C or Esidrex is associated with a 2- to 3-fold increase in the frequency of gene convertants, but was not accompanied by an increase in point mutants. When conidia were grown on cellophane but otherwise treated as before the frequency of gene convertants was increased 8-fold, but induction of point mutants was negligible. This effect was the same for irradiated and unirradiated conidia. The environment created by the cellophane in contract with the medium appears to affect the action of each of the three compounds synergistically. (author).

British Library Electronic Table of Contents (United Kingdom)

Based on the corrected phase diagrams proper growth conditions for Li2Zn2(MoO4)3 crystals are selected. Large crystals (up to 100 mm), both impurity-free and activated by transition metal ions (Cu, Cr), are grown by the low-gradient Czochralski method. By the EPR method the charge state and structural position of copper and chromium ions are determined. The performed studies of luminescent properties show that for impurity-free crystals luminescence with ? = 388 nm with a two-exponential luminescence decay with ?1 = 2 ns and ?2 = 6 ns is observed at room temperature. At 77 K for both impurity-free crystals and those activated with transition metal ions luminescence with ? = 560 nm and the luminescence lifetime ? = 100 ns is observed, the intensity of luminescence with ? = 560 nm depending ...

International Nuclear Information System (INIS)

Selective formation of ZnO nanodots was accomplished by metalorganic chemical vapor deposition on nanopatterned SiO_2/Si substrates. Self-organized ZnO nanodots were selectively formed in nanopatterned lines of Si created by etching of SiO_2 with focused ion beam (FIB), whereas any nanodots were hardly observed on the SiO_2 surface in the vicinity of the FIB-sputtered Si areas. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned lines is mainly attributed to the effective migration of Zn adatoms diffusing on the SiO_2 surface into the Si lines followed by the nucleation at surface atomic steps and kinks created by Ga"+ ion sputtering. Cathodoluminescence measurements confirmed that the emission originated from the selectively grown ZnO nanodots.

British Library Electronic Table of Contents (United Kingdom)

Abstract Root exudates play a major role in the mobilization of sparingly soluble nutrients in the rhizosphere. Since the amount and composition of major metabolites in root exudates from one plant species have not yet been systematically compared under different nutrient deficiencies, relations between exudation patterns and the type of nutrient being deficient remain poorly understood. Comparing root exudates from axenically grown maize plants exposed to N, K, P, or Fe deficiency showed a higher release of glutamate, glucose, ribitol, and citrate from Fe-deficient plants, while P deficiency stimulated the release of -aminobutyric acid and carbohydrates. Potassium-starved plants released less sugars, in particular glycerol, ribitol, fructose, and maltose, while under N deficiency lower am...

British Library Electronic Table of Contents (United Kingdom)

One of the issues with printers - or the increasingly common multi-function devices (MFDs) - is that no one takes any notice of them. They just sit there, unacknowledged and ignored, in the corner of the office, printing, photocopying, faxing and even emailing away and no one gives them a second thought. Until something goes wrong. No-one gives printers - or multi-function devices (MFDs) - a second thought, as they have just been sitting there in offices doing their thing for years. But the problem is that they have now grown up to become fully-fledged computers and are starting to present an information security risk. These machines now have operating systems, hard drives and IP addresses, and have been exploited as storage devices by hackers. But most problems stem from poor internal pra...

British Library Electronic Table of Contents (United Kingdom)

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8mA, and a slow photoresponse with a rise time of 5min and a decay time of 7min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the d...

British Library Electronic Table of Contents (United Kingdom)

Recycling of carbon by the photorespiratory pathway involves enzymatic steps in the chloroplast, mitochondria, and peroxisomes. Most of these reactions are essential for plants growing under ambient CO2 concentrations. However, some disruptions of photorespiratory metabolism cause subtle phenotypes in plants grown in air. For example, Arabidopsis thaliana lacking both of the peroxisomal malate dehydrogenase genes (pmdh1pmdh2) or hydroxypyruvate reductase (hpr1) are viable in air and have rates of photosynthesis only slightly lower than wild-type plants. To investigate how disruption of the peroxisomal reduction of hydroxypyruvate to glycerate influences photorespiratory carbon metabolism we analyzed leaf gas exchange in A. thaliana plants lacking peroxisomal HPR1 expression. In addition, b...

British Library Electronic Table of Contents (United Kingdom)

In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In2S3 buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In2S3 thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell.

Energy Technology Data Exchange (ETDEWEB)

GaP and AlGaP were grown by atmospheric pressure OMVPE on GaP substrates using tertiarybutylphosphine as the phosphorus source. A specular surface of GaP was obtained on a (100) just-oriented surface at 700deg C. Hazy but uniform thickness AlGaP was obtained. The growth efficiency for GaP was 1.2x10{sup 3}{mu}m/mol and that for AlGaP was 2.1x10{sup 3}{mu}m/mol.4.2 K photoluminescence showed near-edge emission from both GaP and AlGaP. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Coyle, D.R., and J.W. Amrine, Jr. 2004. New collection records and host range of the cottonwood leafcurl mite, Tetra lobulifera (Keifer) (Acari: Eriophyidae), in the USA. Internat. J. Acarol. 30(1):3-8. The cottonwood leafcurl mite, Aculops lobuliferus Keifer, 1961, is renamed as Tetra lobulifera (Keifer). This eriophyid mite is capable of inflicting substantial damage on plantation- and native-grown cottonwoods (Populus spp.). We report new State and County collection records from the eastern and northwestern U.S.A. as well as new host records, including Populus grandidentata Michx. (big-tooth aspen), for this pest. This updates the established geographic range of T. lobulzjera, and demonstrates its ability to utilize other host plants in the genus Populus for development.

British Library Electronic Table of Contents (United Kingdom)

During the first few years of elevated atmospheric [CO2] treatment at the Nevada Desert FACE Facility, photosynthetic downregulation was observed in desert shrubs grown under elevated [CO2], especially under relatively wet environmental conditions. Nonetheless, those plants maintained increased A sat (photosynthetic performance at saturating light and treatment [CO2]) under wet conditions, but to a much lesser extent under dry conditions. To determine if plants continued to downregulate during long-term exposure to elevated [CO2], responses of photosynthesis to elevated [CO2] were examined in two dominant Mojave Desert shrubs, the evergreen Larrea tridentata and the drought-deciduous Ambrosia dumosa, during the eighth full growing season of elevated [CO2] treatment at the NDFF. A comprehen...

International Nuclear Information System (INIS)

LaPO4 single crystals lightly doped with Er3+, and codoped with Er3+ and Yb3+ have been grown by spontaneous nucleation in a lead phosphate flux. Absorption and luminescence spectra have been measured in the visible and near-IR regions and the excited state dynamics has been studied upon pulsed laser excitation. The obtained results have allowed the evaluation of the effective emission cross-sections around 1.5 ?m, that have been found to be similar to important oxide laser crystals doped with Er3+. Efficient visible upconversion has been observed upon excitation at 980 nm in the codoped crystals. This behaviour is attributed to Yb3+-Er3+ energy transfer processes.

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A 15-nm lithium fluoride (LiF) thin film evaporated on glass substrate is shown to enhance the nucleation of microcrystalline Si grown by plasma enhanced chemical vapour deposition at the amorphous/microcrystalline boundary conditions. The effect is more pronounced at low substrate temperatures, nucleation density being 10 times higher at {approx} 80 {sup o}C. The effect is ascribed to the ionic chemical nature of LiF, the low work function material used in organic electronic devices, and we propose its use for micro patterning crystalline Si regions in otherwise amorphous Si film.

CERN Document Server

We report electronic and magnetic structure of arsenic-doped manganese clusters from density-functional theory using generalized gradient approximation for the exchange-correlation energy. We find that arsenic stabilizes manganese clusters, though the ferromagnetic coupling between Mn atoms are found only in Mn$_2$As and Mn$_4$As clusters with magnetic moments 9 $\\mu_B$ and 17 $\\mu_B$, respectively. For all other sizes, $x=$ 3, 5-10, Mn$_x$As clusters show ferrimagnetic coupling. It is suggested that, if grown during the low temperature MBE, the giant magnetic moments due to ferromagnetic coupling in Mn$_2$As and Mn$_4$As clusters could play a role on the ferromagnetism and on the variation observed in the Curie temperature of Mn-doped III-V semiconductors.

International Nuclear Information System (INIS)

In this paper, a Kramers-Kronig (KK) analysis of infrared (IR) reflectance spectrum of quaternary In_0_._0_1Al_0_._0_6Ga_0_._9_3N film grown by molecular beam epitaxy (MBE) is reported. The infrared measurement is performed in the reflection mode at an incident angle of 15 degree sign by Fourier transform infrared (FTIR) spectroscopy at T = 300 K. The Kramers-Kronig analysis of the reflectivity data has been used to obtain the real and imaginary parts of the index of refraction (n and k), and the real and imaginary parts of the dielectric response function (#epsilon#' and #epsilon#') of the materials. Finally, the transverse optical and longitudinal optical phonons for quaternary In_xAl_yGa_1_-_x_-_yN were obtained.

International Nuclear Information System (INIS)

It has been demonstrated that, by incorporating a thin #approx#20 nm Si_1_-_yC_y (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si_1_-_yC_y layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1x10"1"4 cm"-"2 at 115 keV followed by spike annealing at 1050 deg. C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si_1_-_yC_y layer.

British Library Electronic Table of Contents (United Kingdom)

The effect of water shortage on growth and gas exchange of maize grown on sandy soil (SS) and clay soil was studied. The lower soil water content in the SS during vegetative growth stages did not affect plant height, above-ground biomass, and leaf area index (LAI). LAI reduction was observed on the SS during the reproductive stage due to early leaf senescence. Canopy and leaf gas exchanges, measured by eddy correlation technique and by a portable photosynthetic system, respectively, were affected by water stress and a greater reduction in net photosynthetic rate (A N) and stomatal conductance (g s) was observed on SS. Chlorophyll and carotenoids content was not affected by water shortage in either condition. Results support two main conclusions: (1) leaf photosynthetic capacity was unaffec...

Energy Technology Data Exchange (ETDEWEB)

Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the ``polymorphs`` of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes ``worm holes`` in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100{degrees}C lock in the mechanical twins.

Energy Technology Data Exchange (ETDEWEB)

An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd/sub 2/Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 /sup 0/C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

British Library Electronic Table of Contents (United Kingdom)

Indium sulfide thin films were deposited onto indium-tin-oxide coated glass substrate by electrochemical deposition from an aqueous solution containing In2 (SO4) 3 and Na2S2O3. The deposition conditions were optimized on the basis of data obtained by scanning electron microscope, Auger electron spectroscopy and optical transmission measurements. Furthermore, the photosensitivity of the films was observed by means of photoelectrochemical measurements, which confirmed that the indium sulfide showed n-type conduction. The X-ray diffraction and Raman studies revealed that the as-grown films were amorphous or nanocrystalline in nature and became polycrystalline In2S3 after annealing.

British Library Electronic Table of Contents (United Kingdom)

The effects of time of seed maturation and dry seed storage and of light and temperature requirements during seed incubation on final germination percentage and germination rate were assessed for the invasive shrub Prosopis juliflora (Sw.) D.C., grown under desert environmental conditions of the United Arab Emirates (UAE). Seeds were collected from Fujira on the northern coast of the UAE at different times during the growing seasons (autumn, winter and spring) and were germinated immediately and after 8 months of dry storage under room temperature (20+-3degreeC). Seeds were germinated at three temperatures (15, 25 and 40degreeC) in both continuous light and darkness. The results showed significant effects for time of seed collection, seed storage, light and temperature of seed incubation a...

British Library Electronic Table of Contents (United Kingdom)

As the main forestry species in the Canary Islands (Spain), Pinus canariensis is frequently used in afforestation programs. Several nursery techniques are commonly employed to modify its morphology and physiology with the aim of improving post-planting survival and growth. In this work, we studied how fertilization and light regime treatments applied during the nursery period modify biomass allocation patterns and produce effects in gas exchange and root hydraulic conductance. Seedlings were grown for a 6-month period in the nursery under two light regimes (full sunlight and 40% PAR reduction), and three fertilization levels were applied in each light regime. Morphology, biomass allocation patterns, leaf gas exchange and hydraulic conductance of the whole root system were evaluated. Fertil...

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Transgenic plants offer advantages for biomolecule production because plants can be grown on a large scale and the recombinant macromolecules can be easily harvested and extracted. We introduced an Aspergillus phytase gene into canola (Brassica napus) (line 9412 with low erucic acid and low glucosinolates) by Agrobacterium-mediated transformation. Phytase expression in transgenic plant was enhanced with a synthetic phytase gene according to the Brassica codon usage and an endoplasmic reticulum (ER) retention signal KDEL that confers an ER accumulation of the recombinant phytase. Secretion of the phytase to the extracellular fluid was also established by the use of the tobacco PR-S signal peptide. Phytase accumulation in mature seed accounted for 2.6% of the total soluble proteins. The enzy...

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The low-power operation of a semiconductor buried-heterostructure Raman laser is reported. We are developing these devices for very wide-band optical communication in the terahertz frequency region. It has a structure with a GaP active layer and Al{sub {ital x}}Ga{sub 1{minus}{ital x}}P cladding layers, which are grown by the temperature-difference method under controlled vapor pressure. By making the stripe width 30--40 {mu}m, we have obtained a threshold pump power of 500 mW. A low-threshold semiconductor Raman laser can be pumped by semiconductor injection lasers. We have measured the optical loss of the waveguide and detected the contribution from scattering and leakage at heterointerfaces.

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In the present study the optical properties of co-evaporated indium sulfide thin films are investigated. Before being optically characterized, the composition as well as the crystalline properties of the film have been checked with the help of energy dispersive spectroscopy (EDX) and X-Ray diffraction (XRD) analyses. The optical absorption coefficient ? of this indium sulfide film has been deduced from reflectivity R(?) and transmission T(?) measurements. The fit of the curve representing ?(h?) suggests that the ?-In2S3 has an indirect bandgap of 2.01?eV. Density functional theory (DFT) calculations are performed on this indium sulfide compound, using TB-LMTO code. Through these band structure investigations, an indirect bandgap is predicted as observed experimentally. The top of the valen...

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ABSTRACT To date the effect of silver-containing wound dressings on biofilms, known to be present in chronic wounds, has not been determined or documented. In this current study, we aimed to determine the antimicrobial effect of a silver-containing dressing on biofilms grown in a chambered slide model. Before the addition of a wound dressing onto a 24-hour biofilm, composed of either Pseudomonas aeruginosa, Enterobacter cloacae, Staphylococcus aureus, or a mixed bacterial community, a fluorescent dye was applied. This enabled the viability of sessile bacteria to be monitored in real-time, using a rapid form of confocal laser scanning microscopy over a contact time period of 48 hours. By analyzing all the three-dimensional data generated from the confocal time-lapse sequences, 90% of all se...

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Synchronized cultures of the green alga Scenedesmus quadricauda were grown in the absence (untreated cultures) or in the presence (FdUrd-treated cultures) of 5-fluorodeoxyuridine, the specific inhibitor of nuclear DNA replication. The attainment of commitment points, at which the cells become committed to nuclear DNA replication, mitosis and cellular division, and the course of committed processes themselves were determined for cell cycle characterization. FdUrd-treated cultures showed nearly unaffected growth and attainment of the commitment points, while DNA replication(s), nuclear division(s) and protoplast fission(s) were blocked. Interestingly, the FdUrd-treated cells possessed a very high mitotic histone H1 kinase activity in the absence of any nuclear division(s). Compared with the ...