Energy Technology Data Exchange (ETDEWEB)

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a ...

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

Energy Technology Data Exchange (ETDEWEB)

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs ...

Energy Technology Data Exchange (ETDEWEB)

The temperature dependence of the spontaneous magnetization of epitaxial iron films with a thickness ranging from d=20 to 200nm has been measured. The films are grown on GaAs (100) substrates which are covered by a 150nm thick silver (100) buffer layer. For three-dimensional BCC iron it was observed already in 1929 that saturation of the spontaneous magnetization for T->0 is perfectly described by a T{sup 2} power law. On the other hand, for thin two-dimensional (2D) iron films a T{sup 3/2} law has been established in many recent experimental investigations. In our iron films grown on diamagnetic silver, this dimensionality change occurs at a thickness between d=100 and 200nm. Comparison of the here-observed T{sup 3/2} coefficients with those on iron films grown on paramagnetic tungsten (110) shows that the 2D interactions are {approx}20 times larger in the films on tungsten. ...

Science.gov (United States)

For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of ...

Energy Technology Data Exchange (ETDEWEB)

Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

Energy Technology Data Exchange (ETDEWEB)

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

International Nuclear Information System (INIS)

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

Science.gov (United States)

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup ...

International Nuclear Information System (INIS)

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first ...

Science.gov (United States)

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a GaInP active layer was found to ...

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack ...

Science.gov (United States)

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising ...

CERN Document Server

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2p sub 3 sub / sub 2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga sub 2 O sub 3 powder were used. A separate study aiming the identification of the GaAs surface oxides formed on the GaAs surface ...

International Nuclear Information System (INIS)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P ...

International Nuclear Information System (INIS)

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

International Nuclear Information System (INIS)

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

CERN Document Server

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ...

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In ...

Energy Technology Data Exchange (ETDEWEB)

The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly ...

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

Science.gov (United States)

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of ...

Energy Technology Data Exchange (ETDEWEB)

Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal ...

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

International Nuclear Information System (INIS)

The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.

International Nuclear Information System (INIS)

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, ...

Energy Technology Data Exchange (ETDEWEB)

Thin films of sodium montmorillonite clay and cationic polyacrylamide were grown on a polyethylene terephthalate film using layer-by-layer assembly. After 30 clay-polymer layers are deposited, with a thickness of 571 nm, the resulting transparent film has an oxygen transmission rate (OTR) below the detection limit of commercial instrumentation (< 0.005 cc/m{sup 2}/day/atm). This low OTR, which is unprecedented for a clay-filled polymer composite, is believed to be due to a brick wall nanostructure comprised of completely exfoliated clay in polymeric mortar. With an optical transparency greater than 90% and potential for microwaveability, this thin composite is a good candidate for foil replacement in food packaging and may also be useful for flexible electronics packaging.

Energy Technology Data Exchange (ETDEWEB)

Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

International Nuclear Information System (INIS)

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for ...

Science.gov (United States)

CuPt-type ordering in In{sub 0.49}Al{sub 0.51}P is studied by TEM. The lattice-matched film was grown by MOCVD on a GaAs substrate oriented 10{sup o} off (001) towards [110], at 650 C and 25 nm/min. TEM [110] and [1{bar 1}0] cross-sections (XS) were made by wedge polishing and 2 kV Ar ion milling. In CuPt-type ordering of In{sub 0.52}Ga{sub 0.48}P, alternating In-Ga-In-Ga {l_brace}111{r_brace} planes of group III atoms produce 1/2 {bar 1}11 and 1/2 1{bar 1}1 order spots in the 110 SADP, while the [1{bar 1}0] SADP shows no order spots [1-3]. A few studies have reported this type of order in In{sub 0.49}Al{sub 0.51}P [4]. The 004 BF image of the [1{bar 1}0] XS in Fig. 1 shows uneven light/dark contrast modulation due to phase separation often observed in In{sub 0.52}Ga{sub 0.48}P. There are also light/dark layers marked ML parallel to the film growth plane; such unintentional multilayers have also been observed [5] but their ...

Science.gov (United States)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al{sub {ital x}}Ga{sub 1{minus}{ital x}}InP{sub 2}; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. {copyright} {ital 1996 The American Physical Society.}

Energy Technology Data Exchange (ETDEWEB)

Structural studies of Ni/Cu multilayers grown by electro-deposition technique under different electro-chemical conditions have been carried out using specular and off-specular neutron reflectometry techniques at room temperature. The specular reflectivity measurements give values of layer thickness, density and interface roughness for these two films. The Off-specular reflectivity measurements indicate different interface morphology of the two films.

British Library Electronic Table of Contents (United Kingdom)

In this paper, we study the optical properties of indium sulfide thin films to establish the best conditions to obtain a good solar cell buffer layer. The In2S3 buffer layers have been prepared by chemical bath deposition (CBD) and thermal evaporation (PVD). Optical behavior differences have been found between CBD and PVD In2S3 thin films that have been explained as due to structural, morphological and compositional differences observed in the films prepared by both methods. The resultant refractive index difference has to be attributed to the lower density of the CBD films, which can be related to the presence of oxygen. Its higher refractive index makes PVD film better suited to reduce overall reflectance in a typical CIGS solar cell.

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

Science.gov (United States)

Room-temperature continuous-wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 /sup 0/C for a device with an 8-..mu..m-wide and a 250-..mu..m-long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T/sub 0/ was 138 K under cw operation. The wafer with the MQW structure composed of 100-A-thick GaInP wells and 40-A-thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.

Energy Technology Data Exchange (ETDEWEB)

Buried ridge stripe lasers have been grown on InP in two steps by gas source molecular beam epitaxy. The active structure consists of a compressively strained layer multi quantum well with an equivalent wavelength emission at 1.5 [mu]m. The stripe was defined by reactive ion etching. A threshold current of 22 mA was reproducibly obtained on a laser length of 500 [mu]m. A CW output power of 48 mW per facet was achieved. In addition, preliminary accelerated aging tests have shown the high reliability the structure. (orig.)

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical ...

Science.gov (United States)

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

International Nuclear Information System (INIS)

We report on the possibility to prepare ZnSe porous layers with different degrees of porosity by means of electrochemical methods. The prepared porous structures were characterized using scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL) techniques. The PL of the as-grown material and porous layers measured at low temperatures (10 K) was found to be dominated by an emission band at 2.796 eV as well as a band at 2.700 eV with several phonon replicas. The analysis of the dependence of these bands upon the excitation power density and temperature suggests that free-to-bound and respectively donor-acceptor electron transitions are responsible for the emission bands involved. The comparison of SEM and CL images taken from the same porous regions demonstrated that cathodoluminescence intensity from layers with small characteristic sizes of the porous entities (around 50 ...

Energy Technology Data Exchange (ETDEWEB)

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a ...

International Nuclear Information System (INIS)

AlGaInP epitaxial layers grown at 690 degree C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the #left brace#111#right brace# directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, ...

International Nuclear Information System (INIS)

Distributed Bragg reflectors (DBRs) composed of In_0_._5Al_0_._5P/In_0_._5(Al_yGa_1_-_y)_0_._5P quarter-wave layers have been prepared using metalorganic vapor phase epitaxy. The structures were grown over a wide range of high-index layer composition (0#<=#y#<=#0.6) and peak reflectivity wavelength (720 nm#<=##lambda##<=#565 nm, covering the spectrum from deep red to green). In all cases observed and calculated reflectance spectra were in excellent agreement. Using these DBRs, an undoped all-phosphide visible vertical cavity surface-emitting laser structure was grown. Under pulsed optical excitation at room temperature, lasing was obtained at a wavelength of #lambda##approx#670 nm, with a threshold power density comparable to that observed from similar structures prepared using AlAs/AlGaAs DBRs.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Energy Technology Data Exchange (ETDEWEB)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd/sub 2/Si layers.

Science.gov (United States)

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

Energy Technology Data Exchange (ETDEWEB)

Development of electronic devices with better performance and smaller size requires the passive components to be embedded within a printed wire board (PWB). The 'film-on-foil' approach is the most viable method for embedding these components within a PWB. We have deposited high-permittivity ferroelectric lead lanthanum zirconate titanate (Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub x}, PLZT 8/52/48) films on base metal foils by chemical solution deposition. These prefabricated capacitor sheets can be embedded into PWBs for power electronic applications. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, a conductive buffer layer of lanthanum nickel oxide (LNO) was applied by chemical solution deposition on nickel foil before the deposition of PLZT. With a {approx} 0.7-{micro}m-thick ferroelectric PLZT film grown on LNO-buffered nickel foil, we measured capacitance ...

International Nuclear Information System (INIS)

A wide variety of thin film coatings, deposited by different techniques and with potential applications in various important areas, have been characterised by the Phase Modulated Spectroscopic Ellipsometer, installed recently in the Spectroscopy Division, B.A.R.C. The Phase Modulated technique provides a faster and more accurate data acquisition process than the conventional ellipsometry. The measured Ellipsometry spectra are fitted with theoretical spectra generated assuming an appropriate model regarding the sample. The fittings have been done objectively by minimising the squared difference (#chi#"2) between the measured and calculated values of the ellipsometric parameters and thus accurate information have been derived regarding the thickness and optical constants (viz, the refractive index and extinction coefficient) of the different layers, the surface roughness and the inhomogeneities present in the layers. Measurements have been done ...

Energy Technology Data Exchange (ETDEWEB)

We report on the elimination of defect formation which is associated with high dose indium implantations under solid phase epitaxial regrowth (SPER) annealing conditions of 650-800 deg. C. This is achieved by incorporating a layer of epitaxially grown Si{sub 1-y}C {sub y} layer, strategically located at the end-of-range (EOR) of the implant profile. An indium implant of 115 keV at 1 x 10{sup 14} cm{sup -2} was performed followed by annealing at temperature ranges of 650-800 deg. C. Samples with the Si{sub 1-y}C {sub y} layer revealed the elimination of secondary EOR defects with effectively suppressed indium transient enhanced diffusion (TED), indicating the function of carbon as an efficient sink for silicon interstitials at reduced annealing temperatures, in the SPER dopant activation regime.

Energy Technology Data Exchange (ETDEWEB)

Surface oxide films were grown on 99.99% copper and brass (copper-zinc alloy, Cu77Zn21Al2) in 0.1 mol L{sup -1} borax solution at open circuit potential and were characterized using various experimental techniques. The composition of the passive films formed in situ on the different materials was studied using differential reflectance spectroscopy. The thickness of the oxide layers on copper and brass was compared by chronopotentiometric curves and potentiodynamic reductions. The electrical properties of each oxide were analyzed by means of electrochemical impedance spectroscopy. Their influence on the oxygen reduction reaction was also investigated using voltammetry hydrodynamic tools such as the rotating disk electrode. The results show that the incorporation of Zn to Cu in brass changes the composition and the thickness of the surface film. The films grown on brass tend to be thicker but less resistive and Zn compounds ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a technique known as pulsed laser deposition, and ...

Science.gov (United States)

Data are presented demonstrating short-wavelength (approx. <6400 A) continuous (cw) laser operation of p-n diode In/sub 0.5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0.5/P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30 /sup 0/C to room temperature (RTapprox. =300 K, lambdaapprox. =6395 A) the threshold current density changes from 2.3 x 10/sup 3/ A/cm/sup 2/ (-30 /sup 0/C) to 3.7 x 10/sup 3/ A/cm/sup 2/ (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7 x 10/sup 3/ W/cm/sup 2/, J/sub eq/approx.2.9 x 10/sup 3/ A/cm/sup 2/) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

Energy Technology Data Exchange (ETDEWEB)

A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

International Nuclear Information System (INIS)

We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si"+ ion implants at very high doses (#approx#10"1"6cm"-"2). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (#approx#700 at 740 degree C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of #left brace#311#right brace# defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is ...

International Nuclear Information System (INIS)

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO_2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide ...

Energy Technology Data Exchange (ETDEWEB)

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

Energy Technology Data Exchange (ETDEWEB)

This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

Science.gov (United States)

We have grown crack-free antiferroelectric (AFE) Pb{sub 0.92}La{sub 0.08}Zr{sub 0.95}Ti{sub 0.05}O{sub 3} (PLZT) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, we applied a conductive buffer layer of lanthanum nickel oxide (LNO) on the nickel foil by chemical solution deposition prior to the PLZT deposition. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be prepared at high temperatures in air. With the AFE PLZT deposited on LNO-buffered Ni foils, we observed field-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, E{sub AF} = 260 kV cm{sup -1}, and the reverse phase transition field, E{sub FA} = 220 kV cm{sup -1}, were measured at room temperature on a {approx}1.15 {micro}m thick PLZT film grown on LNO-buffered Ni foils. The relative permittivities ...

International Nuclear Information System (INIS)

Ga_0_._6In_0_._4P/(Al_0_._8Ga_0_._2)_0_._4In_0_._6P strain-compensated multiple quantum wells (SCMQW) and Ga_0_._5In_0_._5P/(Al_0_._4Ga_0_._6)_0_._5In_0_._5P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

International Nuclear Information System (INIS)

The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In particular, the I-substitutional carbon (C) interactions have been studied, using a molecular-beam-epitaxy grown Si_1_-_yC_y layer interposed between the shallow I-source and a deeper B-spike (marker for I-concentration). Substitutional C atoms are shown to trap I's, to be removed from their substitutional sites, and to form stable precipitates into the C-rich region. The I-trapping mechanism was quantitatively studied by a simulation code. The reactions causing trapping and deactivation are described. In addition, the boron markers approach was extended to the two dimensional (2D) diffusion. High resolution scanning capacitance microscopy was used for quantitative measurements of the 2D boron transient enhanced diffusion induced on a boron delta array by the I's ion beam injected through a ...

International Nuclear Information System (INIS)

Monte-Carlo simulations of 2-MeV #alpha#-particle channeling in Si_1_-_xSn_x alloys with 0#<=#x#<=#1 have been performed. The simulations are compared with measured channeling-angular scans for strained Si_0_._9_5Sn_0_._0_5 layers grown by molecular beam epitaxy (MBE). Agreement between simulated and measured angular scans can only be achieved if we assume a deviation of the crystal structure from the ideal one. This deviation can be attributed to a mosaic structure in the films and to an atomic-scale distortion of the crystal lattice due to an expected difference in the bond lengths between the Si-Si, Si-Sn and Sn-Sn atoms (such a difference in bond lengths has been observed in the epitaxial Si_1_-_xGe_x system). The contributions from both of these imperfections are estimated and discussed.

Energy Technology Data Exchange (ETDEWEB)

We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO{sub 2} layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. {copyright} {ital 1999 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear interpolation.

Energy Technology Data Exchange (ETDEWEB)

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si{sup +} ions to a dose of 2 x 10{sup 14} ions/cm{sup 2} and annealed at 850 deg. C for several times in an RTA system in flowing N{sub 2}. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si{sub int}s supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N{sub 2} ambient.

Energy Technology Data Exchange (ETDEWEB)

This paper deals with conversions of solar energy efficiently into electricity and into gas laser radiation. In the first section, a review study of the possibility of a solar-electric thermophotovoltaic (TPV) device has been done. In a proposed extension of the TPV concept, a Cassagranian optical system concentrates solar radiation to heat a blackbody cavity to 2400/sup 0/K. A double-layer solar cell, GaAs and Si, forming the cylindrical surface concentric to the blackbody cavity, receives the blackbody radiation and converts it into electricity efficiently. A cell conversion efficiency of 50% or more would be possible with the TPV system. The second section explores the concept of blackbody radiation pumping of gas laser media as a step toward utilization of solar energy as a laser pumping source. To demonstrate this concept, an experiment was performed in which various gas mixtures of CO/sub 2/ and He were exposed to 1500/sup 0/K thermal ...

Science.gov (United States)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub ...

International Nuclear Information System (INIS)

Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift mobility, surface band bending, and surface capture coefficient for electrons. Samples grown (unintentionally n-type) by nitrogen-plasma-assisted molecular beam epitaxy primarily from two separate growth runs were examined. The results revealed carrier concentration in the range of (3-6)x10"1"6 cm"-"3 for one growth run, roughly 5x10"1"4-1x10"1"5 cm"-"3 for the second, and drift mobility in the range of 500-700 cm"2/(V s) for both. Nanowires were dispersed onto insulating substrates and contacted forming single-wire, two-terminal structures with typical electrode gaps of #approx =#3-5 #mu#m. When biased at 1 V bias and illuminated at 360 nm (3.6 mW/cm"2) the thinner (#approx =#100 nm diameter) nanowires with the higher background doping showed an abrupt increase in photocurrent ...

Energy Technology Data Exchange (ETDEWEB)

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE ...

Science.gov (United States)

A doubly Q-switched laser with both an acousto-optic (AO) modulator and a GaAs saturable absorber can obtain a more symmetric and shorter pulse with high pulse peak power, which has been experimentally proved. The key parameters of an optimally coupled doubly Q-switched laser with both an AO modulator and a GaAs saturable absorber are determined, and a group of general curves are generated for what we believe is the first time, when the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined, and the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density as well as the influence of the AO Q-switch are considered. These key parameters include the optimal normalized coupling parameter, the optimal normalized GaAs saturable absorber parameters, and the normalized parameters of the AO Q-switch, which can maximize ...

Science.gov (United States)

An x-ray diffraction approach has been developed for determination of the kinetics of growth of Pd/sub 2/Si layers. Epitaxial Pd/sub 2/Si films were grown on Si(111) substrates over a temperature range of 160-222/sup 0/C by a solid-state reaction between the substrates and the Pd overlayers. The parabolic rate equation was verified and rate constants showed Arrhenius behavior with an activation energy E/sub a/ = 1.06 eV and prefactor k/sub 0/ = 7 x 10/sup -4/ cm/sup 2//s. The low value of E/sub a/ suggests a short-circuit diffusion mechanism. It is reasonable to expect that impurities and microstructure may play important roles in the growth process. Impurity levels in the specimens were evaluated by analytic techniques suited to thin-film study: Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Auger electron spectrometry. No impurities were present at concentrations approaching 1 at. %. Some O, C, and F were ...

International Nuclear Information System (INIS)

Plasma-deposited thin films prepared at room temperature, ranging from 46 to 250 A of PdAu on #approx#45-50 A Si-oxide and Si-oxynitride films grown on Si wafers were studied. Grazing incidence X-ray diffraction, X-ray reflectivity, and XPS depth profile techniques were used to characterize the thin films. A reactive interface involving Pd- and Au-silicides is formed, linking the thin film to the Si-oxide and Si-oxynitride films: a small fraction of Pd and Au atoms from PdAu migrate into the Si substrate, first penetrating the oxide layer, and the small fraction of Si atoms from the oxide layer migrate into the PdAu film and form a silicide interlayer consisting of a reactive interface made up of mixtures of Au- and Pd-silicides interspersed within the matrix of PdAu and substrate. The concentration profiles of these silicides have a maximum at the interface with decay on both sides. The density and the face-centered cubic ...

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

International Nuclear Information System (INIS)

Bulgarian 1974. Bulgaria Gramatikova, Kh. Salcheva, G. Bylgarska Akademiya

Science.gov (United States)

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

UK PubMed Central (United Kingdom)

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

For a wider application of GaAs single crystals for semiconductor devices a cheaper process to grow crystals with high purity and low dislocation density is required. According to todays knowledge the Czochralski method with a hot wall vessel should be the choice. The temperature of the vessel has to be 700deg C to avoid condensation of arsenic which vapourizes from the 1240deg C hot melt. Arsenic vapour is very agressive against all metals. Therefore the corrosion resistance of metals and alloys with a high melting point and also ceramics has been tested. All the alloys under investigation are corroded severely so that they have to be excluded as a material for the vessel. The metals tantalum, molybdenum and tungsten are more resistent, titanium forms initially a thick protection layer and further corrosion is greatly reduced. The ceramics investigated (TiB{sub 2}; ALN; Makor; BN) are not attacked by arsenic though they may store some arsenic. ...

International Nuclear Information System (INIS)

Using the slow electrons spectrometer one can get information on the surface structure, its element composition, chemical bonds, adsorption phenomena, electron state density and surface oscillation. We have developed the methods and created the apparatus that makes it possible to investigate the electron backscattering by solid surface. We have studied the electron scattering by the polycrystalline and monocrystalline. GaAs surface in the energy range of 0 to 9 eV. The FWHM of electron energy distribution function was 70 meV. (author).

Energy Technology Data Exchange (ETDEWEB)

A number of screening tests were performed to determine ion species that effectively reduce wear rates when implanted in four industrial steels. Ball bearing steel 100Cr6 (AISI 52100) showed a wear rate reduction by a factor of 20 when implanted with carbon dioxide to a dose of 5x10{sup 17} cm{sup -2} with a non-mass-separated ion beam and by a factor of {>=}20 when implanted with 5x10{sup 17} cm{sup -2} oxygen ions. For the ferritic and martensite steels X90CrMoV18 (AISI 440B, unhardened and hardened) also a strong wear reduction after implantation of oxygen ions was found. Co-implantation of aluminum and oxygen also reduces wear rates of X90CrMoV18, of S6-5-2 (AISI M2), and of 100Cr6, respectively. For comparison, thin oxide layers were grown in a low-temperature thermal oxidation process. These experiments also yielded reduced wear rates by a factor of 10. The surfaces were investigated and characterized by XPS, SIMS, TEM, and ...

UK PubMed Central (United Kingdom)

Fungal and oomycete populations and their dynamics were investigated following the introduction of the biocontrol agent Pythium oligandrum into the rhizosphere of tomato plants grown...Full Text Available

Science.gov (United States)

... Strains Smith and -aybush were both grown in broth containing from 0.1 to 50 pg/ml of acriflavin, acridine orange, or proflavin. ...

Science.gov (United States)

... Abstract : Single crystals of Pb(x)Sn(1-x)Te alloy have been grown with o = or thin film evaporator. ...

Energy Technology Data Exchange (ETDEWEB)

An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for terrestrial as well as for space ...

Energy Technology Data Exchange (ETDEWEB)

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

International Nuclear Information System (INIS)

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

International Nuclear Information System (INIS)

Deep level effects in GaAs MOSFET have been characterised in the ohmic channel using DLTS, low frequency excess noise and dispersion technique. An isothermal multi exponential curve fitting method has been devised and implanted into the DLTS system. Multi exponential curve fitting method used to decompose a multi exponential transient into its constituents so that the peak signature can be better characterised for the case whereas several peaks are closely spaced. Low frequency excess noise and dispersion techniques also confirm the trap in signature of the same traps observed in the DLTS measurements. (author)

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

Science.gov (United States)

Not Available

International Nuclear Information System (INIS)

Certain problems of gamma-absorption method of measuring the thickness of layers in multi-layer items are analyzed. Two examples of solving the above-mentioned problems have been considered. One of them deals with a two-layer item, its integral thickness being known or measured in advance, the second example is referred to a two-layer item with unknown integral value

International Nuclear Information System (INIS)

Single crystals of semi-organic L-histidine hydrobromide have been grown by slow evaporation technique from a mixture of L-histidine and hydrobromic acid in aqueous solution at ambient temperature. From high-resolution X-ray diffraction analysis, the crystalline perfection of the grown crystal has been studied. Single crystal X-ray diffraction analyses, Nuclear Magnetic Resonance spectral analysis, Thermo-Gravimetry (TG), Differential Thermal Analysis (DTA) and hardness test have been employed to characterize the as-grown crystals. The UV cutoff wavelength of the grown crystal is below 300 nm and has a wide transparency window, which is suitable for second harmonic generation of laser in the blue region. Nonlinear optical characteristics have been studied using Q switched Nd:YAG laser (#lambda#=1064 nm). The second harmonic generation conversion efficiency of the grown crystals ...

Energy Technology Data Exchange (ETDEWEB)

The article is the second part of a review dealing with latest developments in the area of solar cell technologies and application. Physical principles, design and efficiency as well as advantages and disadvantages of GaAs- and CdS-solar cells are described. Power generation solar cell systems with voltage converters, combined solar cell/solar collector systems and thermoelectric solar systems are presented in the second part of the article.

Energy Technology Data Exchange (ETDEWEB)

To improve adherent properties of electrogalvanized steel (EGS) to polymeric topcoats, the surfaces of EGS were modified by polyelectrolyte-modified zinc phosphating solution. The electrochemical reaction between phosphating solution and EGS led to the complete coverage with fully grown hopeite crystals after only 5 sec treatment, thereby improving adhesion to topcoating and providing protection of EGS against corrosion. To evaluate the ability of polyphenylene sulfide (PPS) polyaryl thermoplastic coatings to protect zinc phosphate (Zn{center_dot}Ph)treated steels from corrosion in a wet, harsh environment ( 1.0 wt % H{sub 2}SO{sub 4}, 3.0 wt % NaCl and 96.0 wt % water at temperatures from 25{degrees} to 200{degree}C), we exposed them in an autoclave to attempt heating-cooling cyclic fatigue tests (1 cycle = 12 hr at 200{degrees}C + 12 hr at 25{degrees}C) up to 90 times. The major chemical reaction at the interface between the PPS and Zn in the Zn-Ph ...

Science.gov (United States)

One of the NASA research activities was to identify, characterize, and simulate a series of technologies that could be used for hydrogen production at NASA Kennedy Space Center (KSC) using locally available sources. This project examined the production of hydrogen from solar energy. To produce hydrogen by water splitting, the operating voltage of conventional photovoltaic (PV) cells cannot supply the overvoltage required. Thus, the objective of this project was to research and develop photoelectrochemical (PEC) cells that can supply the required voltage for water splitting by constructing a multiple bandgap tandem PV cell and a photocatalyst that can be activated by infrared (IR) photons transmitted through the PV cell. The proposed concept is different from conventional PEC water splitting by using multiple band gap combinations. The advantages for this PEC cell concept is that the PV cells are not in contact with the electrolyte solution, thus reducing the problems of corrosion and ...

Energy Technology Data Exchange (ETDEWEB)

To prove that two-layer, TBP-nitric acid mixtures can be safely stored in the Canyon evaporators, it must be demonstrated that a runaway reaction between TBP and nitric acid will not occur. Previous bench-scale experiments showed that, at typical evaporator temperatures, this reaction is endothermic and therefore cannot run away, due to the loss of heat from evaporation of water in the organic layer. However, the reaction would be exothermic and could run away if the small amount of water in the organic layer evaporates before the nitric acid in this layer is consumed by the reaction. Provided that there is enough water in the aqueous layer, this would occur if the organic layer is sufficiently thick so that the rate of loss of water by evaporation exceeds the rate of replenishment due to mixing with the aqueous layer. Bubbles containing ...

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

UK PubMed Central (United Kingdom)

Vascular permeability factor (VPF) is an Mr 40-kD protein that has been purified from the conditioned medium of guinea pig line 10 tumor cells grown in vitro, and increases fluid permeability from blood...Full Text Available

UK PubMed Central (United Kingdom)

The transport of serine into tobacco (Nicotiana tabacum L. var. Xanthi) cells grown in liquid medium was studied. Serine transport was maximal below pH 4.0. A time-dependent stimulation...Full Text Available

UK PubMed Central (United Kingdom)

We have examined the expression and structure of several genes belonging to two classes of vegetative specific genes of the simple eukaryote, Dictyostelium discoideum. In amebae grown on bacteria, deactivation...Full Text Available

UK PubMed Central (United Kingdom)

IntroductionWhile epidemiological methods have grown in sophistication during the 20^th century, their application in historical occupational (and environmental) health...Full Text Available

UK PubMed Central (United Kingdom)

Sibling Paenibacillus dendritiformis bacterial colonies grown on low-nutrient agar medium mutually inhibit growth through secretion of a lethal factor. Analysis of secretions reveals...Full Text Available

Science.gov (United States)

During Phase II multi-junction solar cell will be grown on the large grain thin film produced during Phase I on flexible/low cost metal foil substrate. ...

Energy Technology Data Exchange (ETDEWEB)

Graphite fluoride (CF{sub x}) is investigated as an additive for WS{sub 2} thin films to reduce its sensitivity to moisture. The films are grown onto hardened 440C stainless steel disks by pulsed laser deposition using the 248 nm line from an excimer laser. Substrate temperature and additive concentration are varied to control film chemistry and crystal structure. The effect of relative humidity (i.e., < 1 to 85% RH) on friction is evaluated. Coatings grown at RT from targets with a low concentration of CF{sub x} exhibit ultra-low friction (ULF) behavior in dry air (i.e., {mu} {<=} 0.01), but friction increases with RH. Mechanisms for the ULF behavior are proposed which suggest that further reductions in friction are possible. Films grown at 300 C or with higher concentrations of CF{sub x} are relatively insensitive to humidity, but have more typical friction coefficients ({mu} {<=} 0.04) in dry air. (orig.)

UK PubMed Central (United Kingdom)

Using pharmacological and chromatographic techniques, it was shown that acetylcholine was present in all organs of both light- and dark-grown mung bean seedings (Phaseolus aureus)....Full Text Available

UK PubMed Central (United Kingdom)

The sale of consumer products over the Internet has grown rapidly, including the sale of drugs. While the growth in online drug sales by reputable pharmacies is a trend that may provide benefits to...Full Text Available

International Nuclear Information System (INIS)

The biological and radiobiological peculiarities of seeds and seedlings of the Rumex confertus and Lupinus polycolor plants, which grown during several generations in plots with different level of radionuclide pollution of the Chernobyl exclusive zone have been investigated.

Science.gov (United States)

Sep 28, 2011 ... Description: Four Populus clones were grown in central Missouri for 2 years at 1 x 1 m spacing to study total biomass production on floodplain ...

UK PubMed Central (United Kingdom)

Confluent monolayers of microvascular endothelial cells, derived from the rat epididymal fat pad and grown in culture, were radioiodinated by using the lactoper-oxidase method. Their radioiodinated...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

This work deals with a rational vision of stratospheric ozone including the threats on ozone layer, the verifications and the fears. After a recalling on the ozone layer history, the authors treats the question of the ultraviolets particularly the beneficial effects. Then an explanation of the ozone layer decrease is given. (O.L.). 29 refs., 6 figs.

International Nuclear Information System (INIS)

Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.

Science.gov (United States)

A finite three-dimensional layer-by-layer photonic crystal with planar defects in a layer is shown to drastically modify the spontaneous emission rate of an embedded dipole. Finite-difference time-domain calculations with one quarter symmetric boundary condition and perfectly matched layer demonstrate the strong enhancement effects induced by the cavity resonance of defect modes and band-edge resonant modes. Simulation shows that the emission spectra are quite different when the position or polarization of the dipole is changed. Moreover, the extraction efficiency is calculated to observe the percentage of light leakage through a substrate.

Energy Technology Data Exchange (ETDEWEB)

Callus cultures derived from pith tissue of Nicotiana tobacum were grown on two media either under continuous illumination or in complete darkness. The first medium limited greening ability of callus grown in the light (3 milligrams per liter naphthalene acetic acid, 0.3 milligram per liter 2-isopentenylaminopurine, Murashige and Skoog salts, and 2% sucrose). The second medium encouraged chlorophyll synthesis (greening) though not shoot formation (0.3 milligram per liter naphthalene acetic acid; 0.3 milligrams per liter 2-isopentylaminopurine). To measure intracellular concentrations, calli were grown for 15 days on these standard media containing (U-/sup 14/C)sucrose. The dry weight proportions of the calli (as a fraction of fresh weight) and many metabolite concentrations nearly doubled in light-grown cells compared to dark-grown cells and increase 30 to 40% on low-auxin media ...

International Nuclear Information System (INIS)

We have investigated the characteristics of ion-beam-induced spontaneous etching (IBISE) of GaAs in Cl_2 ambient by using a Ga-focused ion beam (FIB) with an energy ranging from 3 to 15 keV. The etched depth of the irradiated region was more than 20 times greater than that of unirradiated region. When the sputtered depth by FIB irradiation amounted to around 8 A at each ion energy, the etched depth in Cl_2 ambient for 1 hour became saturated. The saturated etched depths were 450, 550, 750 and 800 A at the ion energy of 3, 5, 10 and 15 keV, respectively. The residual damage of the etched surface was also investigated by photoluminescence (PL) measurement. The maximal PL intensity was obtained at around the threshold dose of IBISE and increased with decreasing ion energy. The full recovery of PL intensity was observed at the ion energy of 3 keV after annealing at 400degC. (author).

International Nuclear Information System (INIS)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K_#alpha# X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K_#alpha# X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the conditions necessary for ...

Energy Technology Data Exchange (ETDEWEB)

The variations of thickness of the ozone layer over Denmark in the 1978-1994 period based on monthly figures are presented. (CLS)

International Nuclear Information System (INIS)

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous ...

Energy Technology Data Exchange (ETDEWEB)

A review is given of the state-of-the-art of single and polycrystalline solar cells, which includes a short theoretical review, laboratory achievements, and production methods. The Si single and polycrystalline cell and the amorphous Si cell are described, including material preparation, crystal and sheet growth, and cell and panel production. Promising second generation thin film solar cells including GaAs, CdS(CuInSe/sub 2/), and CdTe are briefly described. Economical aspects are discussed.

Energy Technology Data Exchange (ETDEWEB)

A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

International Nuclear Information System (INIS)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

Energy Technology Data Exchange (ETDEWEB)

This thesis details the first direct ultrafast measurements of the dynamic thermal expansion of a surface and the temperature dependent surface thermal diffusivity using a two-color reflection transient grating technique. Studies were performed on p-type, n-type, and undoped GaAs(100) samples over a wide range of temperatures. By utilizing a 90 fs ultraviolet probe with visible excitation beams, the effects of interband saturation and carrier dynamics become negligible; thus lattice expansion due to heating and subsequent contraction caused by cooling provided the dominant influence on the probe. At room temperature a rise due to thermal expansion was observed, corresponding to a maximum net displacement of {approximately} 1 {Angstrom} at 32 ps. The diffracted signal was composed of two components, thermal expansion of the surface and heat flow away from the surface, thus allowing a determination of the rate of expansion as well as the surface thermal diffusivity, ...

International Nuclear Information System (INIS)

A method was proposed and examined to deposit thick cubic boron nitride (cBN)-rich layer of good adhesion to silicon substrate. The method combined (i) the insertion of a thick sp"2 buffer layer, and (ii) the use of an appropriate assist ion beam energy for the growth of the cBN-rich top layer. The sp"2-bonded boron nitride buffer layer was deposited under irradiation of ions with energies in the range of 200-360 eV. The buffer layer was found to contain curled graphitic basal planes, and so was supposed to be relatively deformable, and facilitate the relaxation of stresses in the cBN-rich top layer. The ion assist introduced during the growth of the cBN-rich layer was supposed to both create and annihilate defects, and so resulted in the generation and relaxation of internal stresses. Results showed that the insertion of a 492 nm sp"2 ...

International Nuclear Information System (INIS)

The structure of the layers formed on a silver electrode by the adsorption of pyridine, Cl"-, CN"- and SO_4"2"- is discussed. A comparison of the amount of the species adsorbed with their Raman spectra shows that there is no simple relation between the species concentration and the enhancement of the Raman intensity. Furthermore, the inhomogeneity of the layers is shown by Raman microscopy observations. These results lead the authors to propose the formation of a new species stabilized in the colloidal silver layer. The Raman enhancement could be explained by the existence of a resonance effect. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

Governments around the world will soon make decisions on policies that could determine the fate of the ozone layer-the Earth's shield from harmful ultraviolet radiation. The Vienna Convention for the Protection of the Ozone Layer, signed on March 22, 1985, created a framework for scientific cooperation and information exchange that will form the basis for a protocol for controlling substances thought to threaten the ozone layer. As of mid-1987, 29 countries had signed the Convention, including the major producers and users of chlorofluorocarbons (CFCs), the most important of suspect chemicals.

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

Science.gov (United States)

Not Available

International Nuclear Information System (INIS)

Planar channeling effects are studied in such well-oriented polycrystalline layers as NiSi_2 and Pb_2Si layers formed on single crystalline Si. Crystalline perfection of such layers is discussed by using the energy- and angular dependences of the axial and planar channeling yields. It has been shown that, in suitable conditions, the energy dependence of the planar yield is more sensitive to the spread of crystallite orientations in polycrystals than that of the axial one. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

The effects of reservoir layering and gravity segregation on nonisothermal injection and falloff tests are investigated. Results show that layering does not affect injection or falloff data if all the layers are permeable and accept fluids from the wellbore. In such cases, the average permeability, skin factor, and distance to the thermal front can be calculated using the techniques developed for homogeneous reservoirs. Special considerations have to be taken for cases where several layers are impermeable or are permeable but do not accept fluids of the well face. In the first case (impermeable layers), knowledge of the total thickness of the permeable layers is required for the existing techniques to be applied successfully. In the second case, the existing techniques cannot be applied, but characteristic responses from injection and falloff test are seen; ...

International Nuclear Information System (INIS)

Reflection coefficients of electromagnetic waves in a nonuniform plasma layer with electrons, positive ions and negative ions, covering a metal surface are investigated by using the finite-difference-time-domain method. It is shown that the reflection coefficients are influenced greatly by the density gradient on the layer edge, layer thickness and electron proportion, i.e., the effect of the negative ions. It is also found that low reflection or high attenuation can be reached by properly choosing high electron proportion, thick plasma layer, and smooth density gradient in the low frequency regime, but sharp density gradient in the high frequency regime. (authors)

Energy Technology Data Exchange (ETDEWEB)

Both (001)- and (111)-oriented CeO[sub 2] thin films have been grown on amorphous fused silica (SiO[sub 2]) substrates by ion-beam assisted pulsed laser ablation of a polycrystalline CeO[sub 2] target. Using 200 eV Ar[sup +] ions incident at 55[degree] to the substrate normal, the preferred orientation for CeO[sub 2] film growth is (001) at room temperature, but changes to (111) for temperatures [ge]300 [degree]C. Furthermore, the ion-beam assisted CeO[sub 2] films exhibit strong in-plane crystallographic alignment. In contrast, CeO[sub 2] films grown without ion-beam assistance exhibit a mixture of polycrystalline orientations with the relative amounts depending on growth temperature. Under optimum conditions, off-normal-incidence Ar[sup +] ions produce a (111)-oriented crystalline CeO[sub 2] film that is aligned with respect to a single in-plane axis, on an amorphous substrate.

Science.gov (United States)

Photorefractives, in general, are among the most promising materials solutions to real time optical correlation. Applications include military target recognition and civilian robotic vision. Crystals of sillenite structure photorefractives, Bi12XO20, where X equals Si, Ge, or Ti, have been grown by melt techniques and in the case of bismuth silicon oxide (BSO) and bismuth titanium oxide (BTO) by the hydrothermal method of high-temperature/high-pressure solution growth. The two growth methods are discussed and crystals grown by the two methods are compared in this paper. Optical absorption and TSC studies show that hydrothermal BSO is essentially free of the native antisite Bi defect which usually acts as a donor. These studies also show that the trap density is greatly reduced in hydrothermal material. Preliminary experiments show that hydrothermal BTO crystals have improved properties over melt grown samples. Al and P act ...

International Nuclear Information System (INIS)

High quality graphene sheets are synthesized through efficient oxidation process followed by rapid thermal expansion and reduction by H2. The number of graphene layers is controlled by tuning the oxidation degree of GOs. The higher the oxidation degree of GOs is getting, the fewer the numbers of graphene layers can be obtained. The material is characterized by elemental analysis, thermo-gravimetric analysis, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and Fourier transform infrared spectroscopies. The obtained graphene sheets with single, triple and quintuplicate layers as anode materials exhibit a high reversible capacity of 1175, 1007, and 842 mA h g-1, respectively, which show that the graphene sheets with fewer layers have higher reversible capacity. -- Graphical abstract: The typical TEM images of the graphene sheets derived from GO3(a), GO2(b) and ...

International Nuclear Information System (INIS)

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

British Library Electronic Table of Contents (United Kingdom)

Pots used for experiments conducted on plants grown in them create rooting environments that are affected by limited soil volume, which can affect various physiological processes, including transpiration, and plant growth. However, the applicability of results from pot experiments to the field has received limited attention. The objective of this study was to compare the growth and transpiration of maize (Zea mays L.) and winter wheat (Triticum aestivum L.) when grown in pots and field plots under various constant water deficits. The experiments were conducted under similar environmental conditions for both pots and plots. Transpirational responses at both transient (RTTr) and daily (RDTr) time scales to a decreasing fraction of available soil water (FASW) were analyzed. For a comparable F...

Energy Technology Data Exchange (ETDEWEB)

Epitaxial films grown pseudomorphically on substrates provide a way to stabilise non-equilibrium structures of materials. Obviously, there always is a certain lattice misfit between substrate and film material in its bulk equilibrium structure. In the pseudomorphic regime, this misfit can either lead to the growth of films in a strained bulk structure or even yield structures that are not stable in the bulk. Large misfits do not necessarily imply large lateral stress. Theory can help to predict e.g. geometry, stress and magnetic properties of pseusomorphically grown metal films. In this work, we considered the fcc-bcc epitaxial Bain path of 3d, 4d, and 5d transition metals, which provides a reasonable description of tetragonally distorted films on substrates. We carried out density functional calculations in the implementation of the full potential local orbital program package FPLO. Emphasis is put on similarities among the transition metals.

International Nuclear Information System (INIS)

Lupinus albus L. plants were grown from seeds and irradiated at various stages of development with acute or chronic gamma rays. All plants were greenhouse grown (pre- and post-irradiation) and allowed to proceed through their normal growth cycle. The purpose of these experiments was to establish a Plactochron Index for Lupinus albus L. and to determine the effects of acute and chronic irradiation on development at the macro and microscopic levels. A Plastochron Index was calculated and used as an indirect time scale to evaluate the effects of gamma rays from a common base line. Acute radiation treatment lasted for a period of a few days, whereas chronic treatment was initiated at the seedling stage and lasted for the entire growth season. Vegetative plants were used to study the effects of acute radiation exposure on apical meristem morphology, Plastochron Index, phyllatoxis and gross morphology.

British Library Electronic Table of Contents (United Kingdom)

In this paper, it is shown that (In1?xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.

Energy Technology Data Exchange (ETDEWEB)

Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer ...

British Library Electronic Table of Contents (United Kingdom)

In this work AISI 1045 steel were duplex treated via plasma nitriding of chromized layer. Samples were pack chromized by using a powder mixture consisting of ferrochromium, ammonium chloride and alumina at 1273K for 5h. The samples were then plasma-nitrided for 5h at 803K and 823K, in a gas mixture of 75%N2+25%H2. The treated specimens were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and Vickers micro-hardness test. The thickness of chromized layer before nitriding was about 8mm and it was increased after plasma nitriding. According to XRD analysis, the chromized layer was composed of chromium and iron carbides. Plasma nitriding of chromized layer resulted in the formation of chromium and iron nitrides and carbides. The hardness of the duplex layer...

Energy Technology Data Exchange (ETDEWEB)

The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The current status of non-silicon photovoltaic solar cells is discussed including the identification of current technical and economic issues and future research directions for potential high efficiency low cost technologies. This review covers such advanced materials as CdS/Cu/sub 2/S, CdS/CuInSe/sub 2/, and GaAs homojunction and heterojunction devices; such emerging materials as InP, Zn/sub 3/P/sub 2/ and CdTe; and liquid junction electrochemical photovoltaic cells. An attempt is made to compare the current relative status of these various technologies and to indicate their near term potential where possible. 105 refs.

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

Science.gov (United States)

A general model for the analysis of metal-semiconductor solar cells is presented. The model takes into account the cell optical properties, carrier recombination effects, semiconductor minority-carrier properties, series resistance, cell thickness, and active surface area. Numerical methods are used to solve the appropriate continuity equations and hence compute the photocurrent density under AMO conditions. The operation of the model is demonstrated using p- and n-type Si and GaAs with Au being taken as the barrier metal. Calculations are presented showing the effect on solar energy conversion efficiency of surface recombination velocity, barrier height, minority-carrier lifetime, barrier metal thickness, collecting grid configuration, and cell thickness. A comparison of practical and computed data for the Au/n-GaAs system yields good agreement. (AIP)

Science.gov (United States)

Jump to main content. [logo] US EPA Ozone Layer Protection - Alternatives / SNAP Recent Additions | Contact Us Search: All EPA This Area Go You are here: EPA Home Ozone Layer...

UK PubMed Central (United Kingdom)

Hydrolytic exoenzymes as indicators of metabolically active bacteria were investigated in four consecutive sapropel layers collected from bathyal sediments of the eastern Mediterranean Sea. For comparison,...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A prototype detector based on the inclined boron layer principle is introduced. For typical measurement conditions at the Liquids Reflectometer at the Spallation Neutron Source, its count rate capability is shown to be superior to that of the current detector by nearly two orders of magnitude.

Energy Technology Data Exchange (ETDEWEB)

In this work, the silicon oxynitride layer was studied as a tunneling layer for non-volatile memory application by fabricating low temperature polysilicon thin film transistors on glass. Silicon wafers were oxynitrided by only nitrous oxide plasma under different radio frequency powers and plasma treatment times. Plasma oxynitridation was performed in RF plasma using inductively coupled plasma chemical vapor deposition. The X-ray energy dispersive spectroscopy was employed to analyze the atomic concentration ratio of nitrogen/oxygen in oxynitride layer. The oxynitrided layer formed under radio frequency power of 150 W and substrate temperature of 623 K was found to contain the atomic concentration ratio of nitrogen/oxygen as high as 1.57. The advantage of high nitrogen concentration in silicon oxide layer formed by using nitrous oxide plasma was investigated by capacitance-voltage ...

Energy Technology Data Exchange (ETDEWEB)

A duplex surface treatment technique based on calorizing and plasma nitriding was developed to improve the wear and oxidation resistance of H13 steel at high temperatures. The effects of the relative thickness of the calorized layer to the depth of plasma nitriding on the wear and oxidation properties at temperatures up to 900 C were investigated in this work. High-temperature wear tests were performed at 500 C with dry conditions in open air using a ball-on-disk type tribotest machine. Isothermal oxidation tests were performed at 900 C for up to 100 h under controlled atmosphere. The results indicated that the specimens with a calorized layer as an intermediate phase between the surface duplex layer and the base metal showed higher wear and oxidation resistance than the specimens with a nitrided layer alone. During exposure to elevated temperatures, the aluminum in the calorized ...

UK PubMed Central (United Kingdom)

The mammalian neocortex consists of six layers. By contrast, the reptilian and avian cortices have only three, which are believed to be equivalent to layers I, V and VI of mammals. In mammals, the majority...Full Text Available

Science.gov (United States)

... This pinhole process may be similar to the formation of an oxide layer in aluminum electrolytic capacitors immersed in a borax solution. ...

Energy Technology Data Exchange (ETDEWEB)

Cesium recovery from the polluted layers in the 1/3 scale hydrogen negative ion source for LHD-NBI system has tested. It was found, that the cesium recovery can be produced by additional discharges as from the cesium layer, aged by tungsten and residual gas, so as from the cesium layers, polluted by an occasional water leak. The highest cesium recovery to NI production was produced by a xenon arc, while glow discharge and arcing in hydrogen were less effective. The mechanism of recovery is the ejection of cesium from the underlying enriched layer by the arc and its transport to the surface. (author)

International Nuclear Information System (INIS)

With the aim of optimizing the nitriding process parameters (temperature and gas mixture ) experimental studies of the plasma nitriding of Ck 15 steel were carried out, using a D. C. glow discharge. Nitriding treatments were performed at 450, 500 and 550 and N_2/H_2 volume ratio of 3/1, 1/1 and 1/3 for 5 hours. Nitriding treatment produces modified surface layer consisting of an outer compound layer and an inner diffusion layer.The plasma nitriding of Ck 15 produce single white layer consisting of #gamma#-(Fe_4N).

British Library Electronic Table of Contents (United Kingdom)

There is investigated the role of polymer layers on the metal surface of a fine filler in the formation of a PVC system with electrophysical properties. It is shown that a physicochemical polymer modification takes place under the surface active center influence. Thus, the surface layer properties (density and geometrical characteristics) differ from the PVC ones. The correlation between the electrophysical properties of the PVC composite and the surface layer in the range of the fine copper fraction of 0?11.3 vol % at E ? 106 V m?1 and a frequency response of 20?2 ? 105 Hz is determined. An explanation of the investigated relation is presented.

Science.gov (United States)

Not Available

Energy Technology Data Exchange (ETDEWEB)

The paper describes an analytical study of two parallel-flowing boundary layers of free and forced convection modes on the facing sides of a vertical thin wall. The two layers are analyzed separately within the framework of boundary layer theory, and coupled by the matching conditions at wall. Numerical data are obtained for a wide range of a dimensionless conjugation parameter {zeta} relating the heat transfer effectiveness of two convection modes. Based on these data, an expression for calculating the conjugate mean Nusselt number as a function of {zeta}-parameter is found by means of a curve-fitting method. (orig.)

International Nuclear Information System (INIS)

Technetium transfer from soil to edible parts of various agricultural plants is studied with application of the "9"5"mTc radioactive tracer. The samples of agricultural plants were grown on andesol typical for Japan soil. The technetium transfer factor to edible parts of cultivated lettuce was higher as compared to non foliate cultures. Relative low transfer factor were observed for fruit and pod like plants. the transfer factors for root crops were of intermediate value

Wastenet

...understanding sweden publication publication market publications publications inco publications library public-private partnerships publishing publishing platform pufafeed puglia pulmonary diseases pulp puma pumped hydro storage pumped storage plants purity purpose purpose-grown energy crops purposes pv pv added value pv cells pv crystalline cells pv organic and polymer cells pv research pv ...

UK PubMed Central (United Kingdom)

Influx and accumulation of K⁺ in barley (Hordeum vulgare L. cv Fergus) roots were measured at two temperatures (10°C and 20°C) in plants which had been grown...Full Text Available

UK PubMed Central (United Kingdom)

Water hyacinth (Eichhornia crassipes [Mart.] Solms) plants were grown in environmental chambers at ambient and enriched CO₂ levels (330 and 600 microliters CO₂...Full Text Available

UK PubMed Central (United Kingdom)

1. A cell-free system, prepared from Pseudomonas N.C.I.B. 9340 grown on 4-chloro-2-methylphenoxyacetate (MCPA) was shown to catalyse the reaction sequence: 5-chloro-3-methylcatechol...Full Text Available

UK PubMed Central (United Kingdom)

Large (about 200 grams dry weight) and small (about 5 grams dry weight) specimens of the leaf succulent Agave vilmoriniana Berger were grown outdoors at Phoenix, Arizona. Potted plants...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

In the paper, a potential of solar energy for drying of medicinal plants in Polish conditions is estimated and development of solar drying technologies is presented. The results of economic assessment of flat-plate solar collectors applied for drying of medicinal plants on a farm are promising. In some specific conditions, e.g. drying of wild grown medicinal plants in remote areas, even application of photovoltaic modules for driving of a fan of a solar dryer is a profitable option and enables easy control of the drying air temperature.

UK PubMed Central (United Kingdom)

Barley (Hordeum vulgare L. cv Golden Promise) plants were grown in a continuous culture system in which the root and shoot ammonia and amino acid levels were constant over a 6-hour...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides.

International Nuclear Information System (INIS)

In order to investigate the role of amorphous SiO2 particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO2 particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO2 was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO2 particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of ?-phase and amorphous nano-SiO2 particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO2 particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite alloying layer was ...

International Nuclear Information System (INIS)

A patent is claimed for the invention of a hardening (ionizing radiation resistance) process for MOS type components and CMOS or bipolar type components. The ionizing radiation effect on those systems is the electron-hole pair production, which induces interference phenomena. The MOS main structure is successively composed of a silicon substrate layer, a layer of an irradiation resistant material and a layer of partially monocrystalline silicon.

Energy Technology Data Exchange (ETDEWEB)

Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.

Science.gov (United States)

Heterostructures based on AlGaInP alloy compounds are very attractive for visible semiconductor lasers, heterojunction bipolar transistors (HBTs), and high-electron-mobility transistors (HEMTs) lattice matched to GaAs substrates. Several wet etching solutions for AlGaP of different compositions have been studied. Al{sub 0.5}Ga{sub 0.5}P is found to etch in HF, H{sub 3}PO{sub 4}, hyphosphorous acid (HOPH{sub 2}:O), HCl, KOH, and 1% Br{sub 2}-methanol (MeOH). Etching of Al{sub 0.5}Ga{sub 0.5}P in HCl is reaction limited with an activation energy of {approximately}54.4 kJ/mol. At fixed conditions, the etch rates of Al{sub x}Ga{sub 1{minus}x}P vary exponentially with x in HF and HCl, while in 1% Br{sub 2}-MeOH and mixtures of HCl and HNO{sub 3} the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for AlGaP over InGaP or AlInP with high selectivity, while HCl is useful for the reverse case. The use of 1% Br{sub 2}-MeOH ...

Energy Technology Data Exchange (ETDEWEB)

GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias ...

British Library Electronic Table of Contents (United Kingdom)

An investigation into a three-dimensional, curved shock wave interacting with a three-dimensional, curved boundary layer on a slender body is presented. Three different nose profiles mounted on a cylindrical body were tested in a supersonic wind tunnel and numerically simulated by solving the Navier?Stokes equations. The conical and hemispherical nose profiles tested were found to generate shock waves of sufficient strength to separate the boundary layer on the cylinder, while the shock wave generated by the ogival profile did not separate the boundary layer. For the separated flow, separation was found to occur predominantly on the windward side of the cylinder with the lee-side remaining shielded from the direct impact of the incident shock wave. A thickening of the boundary layer on the...

Energy Technology Data Exchange (ETDEWEB)

Particle simulation studies of collisionless driven reconnection in an open system are presented. Collisionless reconnection evolves in two steps in accordance with the formation of two current layers, i.e., an ion current layer in the early ion phase and an electron current layer in the late electron phase. After the electron current layer is formed inside the ion current layer, the system relaxes gradually to a steady state when convergent plasma flow is driven by an external electric field with a narrow input window. On the other hand, when the convergent plasma flow is driven from the wide input window, magnetic reconnection takes place in an intermittent manner, due to the frequent formation of magnetic islands in the vicinity of neutral sheet. (author)

Energy Technology Data Exchange (ETDEWEB)

The role of the unsaturated properties of sand as a drainage layer in a composite liner system for landfills is investigated. The effect of the unsaturated properties of coarse-grained soil on contaminant migration was evaluated by means of a series of simulations using a one-dimensional model of a two- and a three-layer soil liner system for advection and diffusion, respectively. The results showed that under seepage conditions, the effect of an unsaturated sand layer on the advancement of the concentration front was quite insignificant. The arrival time of the C/C{sub o} = 0.5 concentration front increased from 651 days for the case with no sand layer to approximately 951 days for the case with a 1.0-m sand layer. A steady-state flow condition was ultimately established in the sand, and this fact suggests that the capillary action might not be effective. For diffusion, the arrival ...

Energy Technology Data Exchange (ETDEWEB)

A brief review and assessment of field measurement programs that provide data for mixed layer diffusion research is presented. The majority of programs emphasize either the meteorological aspects of the mixed layer or plume characterization. Few programs are available that provide the complimentary blend of plume and appropriate meteorological measurements needed to adequately validate mixed layer diffusion theory. Three major U.S. EPA (Environmental Protection Agency) field programs that provide data bases for model development and validation of mixed layer diffusion processes are described and discussed in more detail. The Regional Air Pollution Study (RAPS) focused on measurements of surface and mixed layer turbulent transport processes in the urban environment. The Tennessee Plume Study (TPS) obtained a database with coincident measurement of boundary layer ...

Energy Technology Data Exchange (ETDEWEB)

Yellow-emitting pulsed laser operation of an Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P/Al/sub 0.16/Ga/sub 0.36/In/sub 0.48/P/ Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm/sup 2/ for a diode with a Si/sub 3/N/sub 4/ insulated 8-..mu..m-wide and 250-..mu..m-long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.

British Library Electronic Table of Contents (United Kingdom)

The electrical characteristics of thin TiO2 films prepared by metal?organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO2 film of 4.7?nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8?10?2 and 1.1?10?4?A/cm2 at +2 V bias and 1.6?10?1 and 8.3?10?4?A/cm2 at ?2?V bias. The lower leakage currents of TiO2 with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5?1013?cm2, respectively. The lowest mid-gap interface state density is around 7.6?1011?cm?2?eV?1. The equivalent oxide thickness is 0.52?nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6?nm and reaches 9.3?MV/cm at 2.5?n...

British Library Electronic Table of Contents (United Kingdom)

Here in the present paper, we report on growth of stoichiometric and nonstoichiometric nanostructured heterojunction solar cell of CdS/CuInSXSe2-X varying X from 0 to 2 in the interval of 0.5 using cost effective, simple, chemical ion exchange method at room temperature on ITO glass substrate. The as-grown varying composition solar cells annealed at 200degreeC in air and characterized for structural, compositional, optical and illumination studies. The X-ray diffraction pattern obtained from CdS/CuInSXSe2-X solar cell confirms the formation of CuInSe2, CuInS0.5Se1.5, CuInS1Se1, CuInS1.5Se0.5 and CuInS2 phases having tetragonal structure with varying crystallite size from 19, 19.37, 28, 33 and 20nm respectively. The energy dispersive X-ray analysis (EDAX) confirms the expected elemental com...

International Nuclear Information System (INIS)

In this study, SnO2 thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (Ts = 440 oC). The precursors were methanol CH4O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T(?) and reflectance R(?) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity ?AB. The obtained value: ?AB ? 23.4 m3 s-1 helped situating the performance of the as-grown SnO2 compound among most known PV-T oxides like ZnO and TiO2.

International Nuclear Information System (INIS)

Experimental observations related to the initiation of plastic deformation in metals and alloys irradiated with fission neutrons have been analyzed. The experimental results, showing irradiation-induced increase in the upper yield stress followed by a yield drop and plastic instability, cannot be explained in terms of conventional dispersed-barrier hardening because (a) the grown-in dislocations are not free, and (b) irradiation-induced defect clusters are not rigid indestructible Orowan obstacles. A new model called 'cascade-induced source hardening' is presented where glissile loops produced directly in cascades are envisaged to decorate the grown-in dislocations so that they cannot act as dislocation sources. The upper yield stress is related to the breakaway stress which is necessary to pull the dislocation away from the clusters/loops decorating it. The magnitude of the breakaway stress has been estimated and is found to be in good ...

International Nuclear Information System (INIS)

GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

International Nuclear Information System (INIS)

Reflectance anisotropy spectroscopy (RAS) has been used, together with scanning tunnelling spectroscopy (STS), to investigate the optical and electronic properties of nanodots formed by depositing Ag on the Si(111)-3 x 1-Ag surface. One-dimensional (1D) arrays of nanodots were grown on a single-domain (3 x 1)-Ag surface and the anisotropic optical response in the 0.5-5 eV range measured by RAS. Aligned, elongated Ag islands were also grown on this surface to compare their properties with those of the nanodots. STS of the Ag islands showed distinct metallic behaviour, whereas the nanodots revealed a bandgap of #approx#0.6 eV, indicating that the surface of the dots has a non-metallic character, similar to that of the Si(111)-3 x 1-Ag surface. RAS also showed substantial differences between the structures, with a large infrared anisotropy for the metallic Ag islands consistent with anisotropic Drude-like intraband transitions, whereas the ...

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method ...

British Library Electronic Table of Contents (United Kingdom)

Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heteros...

Environmental Research Database

ObjectivesThis working group aims to conduct an in-depth analysis and synthesis of the health risks and benefits of producing and consuming your own food in urban areas. It will have a particular focus on urban soil pollutants - including both toxic elements and persistent organic pollutants that can pass up through the food chain or be ingested in soil. It will consider pathways of pollutant transport and deposition and human uptake from urban cultivation. Against the health risks associated with expos [continued...]DescriptionIn the UK there are over 250,000 allotment holders, many in urban areas, and in many city gardens fruit and vegetables are grown, often in regions known to have a legacy of environmental pollution. The activities of cultivating and eating 'home grown' foods holds both risks and benefits, yet the balance of risk and benefits and the resulting net implications for human health have not been clearly established. This has ...