Energy Technology Data Exchange (ETDEWEB)

The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the ...

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional ...

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

Energy Technology Data Exchange (ETDEWEB)

We present a study of the interaction between Josephson junctions in circular superconducting rings and non-classical microwaves, treating both quantum mechanically. A Hamiltonian that describes both inductive and capacitive coupling between the two systems is derived within the external field approximation. Other Hamiltonians which go beyond the external field approximation, and describe explicitly the interaction of the quantum circuit that produces the non-classical microwaves with the Josephson junction circuit, are also presented. A comparison between current experiments which use classical electromagnetic fields and the proposed experiments that use non-classical microwaves, is made. (orig.) With 6 figs., 32 refs.

Energy Technology Data Exchange (ETDEWEB)

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

Energy Technology Data Exchange (ETDEWEB)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of ...

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit current densities are due to short diffusion ...

Energy Technology Data Exchange (ETDEWEB)

The current status of non-silicon photovoltaic solar cells is discussed including the identification of current technical and economic issues and future research directions for potential high efficiency low cost technologies. This review covers such advanced materials as CdS/Cu/sub 2/S, CdS/CuInSe/sub 2/, and GaAs homojunction and heterojunction devices; such emerging materials as InP, Zn/sub 3/P/sub 2/ and CdTe; and liquid junction electrochemical photovoltaic cells. An attempt is made to compare the current relative status of these various technologies and to indicate their near term potential where possible. 105 refs.

Science.gov (United States)

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

Energy Technology Data Exchange (ETDEWEB)

Ge pre-amorphisation step is used to reduce the high diffusivity and the transient-enhanced diffusion of boron implanted in silicon. The aim of the process is to obtain shallow P{sup +}N junctions. The pre-amorphisation step was performed under different conditions (in ambient temperature and in nitrogen). Following the rapid thermal annealing step, end of range (EOR) defects appear at the amorphous-crystalline interface. These defects could influence the electrical characteristics of the P{sup +}N junctions. An experimental study concerning three samples has been performed without and under a magnetic field of 800 G. The magnetic susceptibility was essentially observed in the case of the reverse current. The impact of the magnetic field, studied by varying the sample temperature, permits us to show an increase of the magnetic susceptibility when the defects present in such structures are electrically ...

Energy Technology Data Exchange (ETDEWEB)

We report on a new experimental approach to the size estimation of the hot spot induced by ionizing particles in a Josephson tunnel junction. Here, in contrast to the case of a superconducting strip, it is possible to investigate the hot spot dynamics in absence of effects due to the heating induced by the bias current. The reported experiment is based on the motion of Abrikosov vortices, trapped in the thin films constituting the junction electrodes, under 5.6 MeV {alpha}-particle irradiation. The fast time evolution of a hot spot, combined with the presence of Abrikosov vortices, produces a change of the static magnetic field in the junction area and thus a change of the critical current value, I{sub c}. Measurements of I{sub c} during the {alpha}-particle irradiation and in presence of trapped Abrikosov vortices allow to determine the rate of appearance of those I{sub c} changes. The behavior of the ...

Energy Technology Data Exchange (ETDEWEB)

As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type ...

International Nuclear Information System (INIS)

The use of workstations, controllers or embedded systems and their applications have become much more relevant than previously. PC-based systems, a cooker programmer, applications of, for example, Prolog machines, Unix and Ada papers, Robotics and Automation are typical examples of this. The three keynote addresses of this symposium have as their subjects the most spectacular microcomputer fields and are presented by leading experts. The papers presented cover most of the traditional interests of Euromicro. Special emphasis is given to contributions on the use of workstations and personal computers, on RISC and GaAs and on transputers.

Science.gov (United States)

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

International Nuclear Information System (INIS)

The use of a selective epitaxial growth technique for fabricating YBCO thin-film microstructures is described. No film post-deposition processing is required; hence damage to the structure is minimized. The technique is compatible with a passivation process to protect the structure without exposure to air. The microbridges, Josephson junctions and rf SQUIDs protected by an amorphous YBCO passivation have long lifetime even after severe accelerated aging tests. Rf SQUIDs fabricated by this technique show a significant reduction of low-frequency noise when operating in weak magnetic fields compared with SQUIDs fabricated by the conventional ion beam etching technique. (author)

International Nuclear Information System (INIS)

We have developed a new type personal dosemeter by using a B-10 doped silicon p-n junction detector with a polyethylene radiator and a polyethylene moderator. The purpose of this study was to develop a real time neutron dosemeter with a nearly flat response in the energy range from thermal to 15 MeV and low angular dependence to the incident neutron direction. The neutron response of the dosemeter was obtained with the Monte Carlo calculation and the monoenergetic neutron experiment in a free air field and also under a condition attached on a phantom.

Energy Technology Data Exchange (ETDEWEB)

This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron ...

International Nuclear Information System (INIS)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

Energy Technology Data Exchange (ETDEWEB)

Short communication.

International Nuclear Information System (INIS)

Studies of asphalt emulsion sealants conducted by the Pacific Northwest Laboratory have demonstrated that the sealants are effective in containing radon and other potentially hazardous material within uranium tailings. The laboratory and field studies have further demonstrated that radon exhalation from uranium tailings piles can be reduced by greater than 99% to near background levels. Field tests at the tailings pile in Grand Junction, Colorado, confirmed that an 8-cm admix seal containing 22 wt% asphalt could be effectively applied with a cold-mix paver. Other techniques were successfully tested, including a soil stabilizer and a hot, rubberized asphalt seal that was applied with a distributor truck. After the seals were applied and compacted, overburden was applied over the seal to protect the seal from ultraviolet degradation.

Energy Technology Data Exchange (ETDEWEB)

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

International Nuclear Information System (INIS)

This report is the result of field work performed at the former White Point Nike Missile Site, San Pedro, California. The Hazardous Waste Remedial Actions Program tasked the Oak Ridge National Laboratory Pollutant Assessments Group in Grand Junction, Colo., with this project. The objective was to determine whether or not radioisotopes possibly associated with past Department of Defense (DOD) operations were present and within accepted background levels. The radiation survey was accomplished by performing three independent radiation surveys, both outdoors and indoors, and random soil sampling. Initially, the site was land surveyed to develop a grid block system. A background radiation investigation was performed out in the San Pedro area.

British Library Electronic Table of Contents (United Kingdom)

Rapid and reliable diagnostic methods are needed to control methicillin-resistant Staphylococcus aureus (MRSA) transmission. We studied the BD GeneOhm? MRSA Assay which is based on one specific amplification product at the junction of the right extremity sequence of the staphylococcal cassette chromosome mec (SCCmec) and the chromosomal sequence of orfX of S. aureus. The test was applied on 95 clinical isolates in Finland: 83% were positive. The isolates giving negative results represented several pulsed-field gel electrophoresis (PFGE) types and harboured SCCmec types IV, V, VI or were new types with different combinations of ccr genes.

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

Energy Technology Data Exchange (ETDEWEB)

A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

UK PubMed Central (United Kingdom)

Prenatal diagnosis of junctional epidermolysis bullosa associated with pyloric atresia was carried out in a couple at risk. Their two previous children had died during the first months of life of the...Full Text Available

Science.gov (United States)

... the application of an acousto- optical tunable filter ... Couplers for Large Switch-Array Applications ... Symmetric Integrated Optic X Junction," Electronics ...

Energy Technology Data Exchange (ETDEWEB)

Investigation of selective emitter solar cells has been undertaken using both device fabrication and accurate two-dimensional simulation program. Our results show that selective emitter solar cells exhibit a relatively low fill factor because of minority carriers crowding at the lateral junction. It is also found that carrier recombination in the space-charge region of the lateral junction limits open-circuit voltage improvements

International Nuclear Information System (INIS)

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. [copyright] 2001 American ...

International Nuclear Information System (INIS)

Inherent to helical tomotherapy is a dose variation pattern that manifests as a 'ripple' (peak-to-trough relative to the average). This ripple is the result of helical beam junctioning, completely unique to helical tomotherapy. Pitch is defined as in helical CT, the couch travel distance for a complete gantry rotation relative to the axial beam width at the axis of rotation. Without scattering or beam divergence, an analytical posing of the problem as a simple integral predicts minima near a pitch of 1/n where n is an integer. A convolution-superposition dose calculator (TomoTherapy, Inc.) included all the physics needed to explore the ripple magnitude versus pitch and beam width. The results of the dose calculator and some benchmark measurements demonstrate that the ripple has sharp minima near p=0.86(1/n). The 0.86 factor is empirical and caused by a beam junctioning of the off-axis dose profiles which differ from the axial profiles as well ...

International Nuclear Information System (INIS)

Point contact Josephson junctions can function as millimeter wave heterodyne mixers with conversion gain. The best results achieved thus far show a single sideband conversion gain of 1.3 and a mixer contribution to the system noise temperature of 54"0K. Both of these results are approximately 5 times better than the best published figures for cooled Schottky barrier diode mixers operated at the same frequency. The measured noise for a variety of junctions can be expressed as a universal function of the normalized rf frequency #OMEGA# = h#omega#/2eI/sub c/R. It is about a factor 2 larger than the calculated noise arising from the thermal noise in the junction shunt resistance, R. The noise calculation was done for the resistively shunted junction model using an analog junction simulator.

Energy Technology Data Exchange (ETDEWEB)

The authors introduce the single electron (Cooper-pair) tunneling junctions using c-axis Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+d} (Bi-2212) superconducting single crystal whiskers. Focused-ion-beam (FIB) etching patterned the Bi-2212 whiskers. The fabricated small stacked junctions have in-plane area S smaller than <1 {micro}m{sup 2}. The junctions showed the current-voltage (I-V) characteristics with the periodic structure of current peaks. The stacking layered structure of Bi-2212 works as multi-junctions array which decrease the effective capacitance, C{sub {Sigma}} = C{sub 0}/N, where C{sub 0} is the capacitance of junction and N is the layer number of elementary junctions. The period of current peaks of I-V curves corresponds to the charging energy of the single Cooper pair, 2Ec (=e{sup 2}/C{sub {Sigma}}).

Energy Technology Data Exchange (ETDEWEB)

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

Energy Technology Data Exchange (ETDEWEB)

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

Energy Technology Data Exchange (ETDEWEB)

As silicon-integrated circuit technology enters the sub-100 nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices must be brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The volume bring together materials scientists, TCAD researchers and silicon technologists to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing is presented both from experimental and theoretical viewpoints. The application of this fundamental research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; extended defects and ...

Energy Technology Data Exchange (ETDEWEB)

The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

Energy Technology Data Exchange (ETDEWEB)

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE ...

Energy Technology Data Exchange (ETDEWEB)

In the thermal hydraulics codes developed for fire safety analysis and for containment thermal hydraulic analysis, junctions in the multi-compartment geometries is often modeled as uni-directional junctions. However, ceiling junctions are known to depict unstable/oscillatory bi-directional flow behavior. Detailed investigations have been carried out to understand the unstable flow behaviour of a junction by analyzing an earlier reported experiment and its subsequent two dimensional numerical RANS based study of fire in an enclosure. The authors attempt more realistic and desired three dimensional and inherently transient large eddy simulations using a computer code Fire Dynamics Simulator (FDS). The paper presents the details of the analysis, the results obtained and further studies required to be conducted so that the findings can be applied to the fire/containment thermal hydraulics analysis codes ...

Energy Technology Data Exchange (ETDEWEB)

Our previous point-contact Andreev reflection studies of the heavy-fermion superconductor CeCoIn{sub 5} using Au tips have shown two clear features: reduced Andreev signal and asymmetric background conductance. To explore their physical origins, we have extended our measurements to point-contact junctions between single crystalline heavy-fermion metals and superconducting Nb tips. Differential conductance spectra are taken on junctions with three heavy-fermion metals, CeCoIn{sub 5}, CeRhIn{sub 5}, and YbAl{sub 3}, each with different electron mass. In contrast with Au/CeCoIn{sub 5} junctions, Andreev signal is not reduced and no dependence on effective mass is observed. A possible explanation based on a two-fluid picture for heavy fermions is proposed.

Science.gov (United States)

... The three meteorological rocket systems, in order of ... IC3 and IC4 divides the incoming clock pulses f ... at the junction of the temperature sensor and R ...

Energy Technology Data Exchange (ETDEWEB)

We have observed resonant changes in the current-voltage characteristics of miniband semiconductor superlattices when the Bloch frequency is resonant with a terahertz field and its harmonics: the inverse Bloch oscillator effect. The resonant feature consists of a peak in the current which grows with increasing laser intensity accompanied by a decrease of the current at the low bias side. The peak position moves linearly with the laser frequency. When the intensity is increased further the first peak starts to decrease and a second peak at about twice the voltage of the first peak is observed due to a two photon resonance. At the highest intensities we observe up to a four photon resonance. A superlattice is expected to show negative differential conductance due to the strong nonparabolicity of the miniband. In this situation the carriers should undergo Bloch oscillations with a frequency {omega}{sub B} = eEd/h. Transient Bloch oscillations of photo excited carriers ...

International Nuclear Information System (INIS)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for visible-wavelength ...

Energy Technology Data Exchange (ETDEWEB)

An add-on multileaf collimator for electrons (eMLC) has been developed that provides computer-controlled beam collimation and isocentric dose delivery. The design parameters result from the design study by Gauer et al (2006 Phys. Med. Biol. 51 5987-6003) and were configured such that a compact and light-weight eMLC with motorized leaves can be industrially manufactured and stably mounted on a conventional linear accelerator. In the present study, the efficiency of an initial computer-controlled prototype was examined according to the design goals and the performance of energy- and intensity-modulated treatment techniques. This study concentrates on the attachment and gantry stability as well as the dosimetric characteristics of central-axis and off-axis dose, field size dependence, collimator scatter, field abutment, radiation leakage and the setting of the accelerator jaws. To provide isocentric irradiation, the eMLC can be placed either 16 or ...

International Nuclear Information System (INIS)

Here we report normal-state conductance measurements of three different types of superconducting tunnel junctions that are being used or proposed for quantum computing applications: p-Al/a-AlO/p-Al, e-Re/e-AlO/p-Al, and e-V/e-MgO/p-V, where p stands for polycrystalline, e for epitaxial, and a for amorphous. All three junctions exhibited significant deviations from the parabolic behavior predicted by the WKB approximation models. In the p-Al/a-AlO/p-Al junction, we observed enhancement of tunneling conductances at voltages matching harmonics of Al-O stretching modes. On the other hand, such Al-O vibration modes were missing in the epitaxial e-Re/e-AlO/p-Al junction. This suggests that absence or existence of the Al-O stretching mode might be related to the crystallinity of the AlO tunnel barrier and the interface between the electrode and the barrier. In the e-V/e-MgO/p-V junction, ...

International Nuclear Information System (INIS)

Heterodyne detection with a point-contact Josephson junction has been investigated both experimentally and theoretically. The measured performance of the device at 36 GHz is in good agreement with the theory. By operating vanadium point contacts at 1.4 K, the authors have achieved a single-sideband (SSB) mixer noise temperature of 54 K with a conversion gain of 1.35 and a signal bandwidth on the order of 1 GHz. A potentially impressive performance for these devices at submillimeter wavelengths can be extrapolated from the results.

Energy Technology Data Exchange (ETDEWEB)

Bone marrow is one of the most radiosensitive organs. Irradiation causes a marked decrease in the total number of hematopoietic cells in the bone marrow. The reticular meshwork structure of marrow stromal cells, however, is relatively resistant to irradiation. Unimpaired stromal cell structure has been thought to be a prerequisite for the repopulation of hematopoietic cells during recovery from the effects of irradiation. The reticular framework is maintained by cell adhesion apparatuses such as gap junctions. The in vitro radiobiologic survival values of a cloned stromal cell line, H-1/A, were studied (n = 1.8, D0 = 138 cGy). Radiation doses of up to 4000 cGy had no detectable effects on the production of colony-stimulating factor 1. H-1/A cells communicate with each other via gap junctions as determined by the sensitive dye-transfer method. Gap-junctional communication between H-1/A cells was resistant to different levels ...

Energy Technology Data Exchange (ETDEWEB)

The electrical transport taking place in the {mu}c-Si tunnel recombination junction (TRJ) of a-Si:H/a-Si:H tandem solar cells and the role of CO{sub 2} plasma oxidation performed between microcrystalline layers is investigated in this paper with the computer code AMPS. Oxidized interfaces were modelled as simple highly defective intrinsic {mu}c-Si layers. Two different tunnel junction structures are studied in this paper: (a) (n){mu}c-Si/oxide/(p){mu}c-Si and (b) (n){mu}c-Si/(i){mu}c-Si/(p){mu}c-Si. In the last configuration the oxide interface is removed and replaced by a thin defective (i) {mu}c-Si layer. Both tunnel junctions have comparable theoretical and experimental tandem solar cell efficiencies which indirectly proves that our modelling assumption for oxidised interfaces is correct. A-Si:H/a-Si:H tandem solar cell efficiencies depend on the thickness of the intrinsic layer introduced in the tunnel ...

International Nuclear Information System (INIS)

A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

Science.gov (United States)

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

UK PubMed Central (United Kingdom)

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

Energy Technology Data Exchange (ETDEWEB)

Our investigation concerns the class of Josephson-like systems, sharing the same nonlinear Hamiltonian. Among the latter a Josephson junction with an external biasing circuit is considered. We diagonalize the fully nonlinear Hamiltonian (in the superconductive regime of the junction) in the Fock space of the TBHA (two-boson Heisenberg algebra) and prove that such algebra leads quite naturally to the theoretical realization of codewords and logical operators: the codewords are defined as the even and odd coherent states of the TBHA, while the logical operators are expressed in terms of operators in the same algebra. Our theoretical construction corresponds to a continuous variable quantum computation scheme; the continuous variables are identified in terms of the physical operators of the junction. The link between this scheme and the technique of fermionization of bosonic systems is also discussed.

Energy Technology Data Exchange (ETDEWEB)

The purpose of this paper is to evaluate the role of the strain-relaxation processes on the leakage current of embedded SiGe S/D junctions. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured to further investigate the relaxation degree of embedded SiGe S/D junctions in the regime where partial relaxation by misfits dislocations is assumed, yielding a reduction of the leakage current density. Further, the impact of the ion implantation-related defects on the electrical performance is discussed. The analysis is complemented with structural characterization based on High Resolution Transmission Electron Microscopy (HRTEM) and Nomarski microscopy. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

British Library Electronic Table of Contents (United Kingdom)

Abstract Background/Aims: Transforming growth factor-b (TGF-b) initiates and maintains epithelial-mesenchymal transition (EMT), which causes disassembly of tight junctions and loss of epithelial cell polarity. In mature hepatocytes during EMT induced by TGF-b, changes in the expression of tight junction proteins and the fence function indicated that epithelial cell polarity remains unclear. Methods: In the present study, using primary cultures of adult rat hepatocytes at day 10 after plating, in which epithelial cell polarity is well maintained by tight junctions, we examined the effects of 0.01-20 ng/ml TGF-b on the expression of the integral tight junction proteins, claudin-1, -2 and occludin, as well as the fence function. Results: In adult rat hepatocytes, TGF-b induced EMT, which was ...

International Nuclear Information System (INIS)

High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge"+ implant to 5x10"1"4 cm"2, and subsequently implanted with 3-keV BF_2"+ molecular ions to 6x10"1"4 cm"2. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main ...

International Nuclear Information System (INIS)

The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 deg. C and the time spent within 50 deg. C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 deg. C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have ...

Energy Technology Data Exchange (ETDEWEB)

Evaluates experiments aimed at selecting optimum design and technical specifications of a support system for junctions of gate roads and longwall faces mined by shearer loaders and powered supports. A set of supports used at a junction of a working face and a gate road consisted of 2 supports (each made up of a roof bar and two hydraulic props). Roof bar length ranged from 4.0 to 5.5 m and from 7.0 to 9.0 m respectively. The support roof bars were parallel to the longitudinal axis of a gate road. Stress distribution in strata surrounding a junction of a working face and a gate road was analyzed. The finite element method was used. Convergence of the roof and the floor of a gate road depending on support yield strength and distance from a measuring point to the supports was analyzed. Recommendations are made for optimum yield strength of the supports. Nomograms for selecting optimum support yield strength are given. ...

International Nuclear Information System (INIS)

The main challenges for PMOS ultra shallow junction formation remain the transient enhanced diffusion (TED) and the solid solubility limit of boron in silicon. It has been demonstrated that low energy boron implantation and spike annealing are key in meeting the 90nm technology node ITRS requirements. To meet the 65nm technology requirements many studies have used fluorine co-implantation with boron and Si"+ or Ge"+ pre-amorphization (PAI) and spike annealing. Although using BF_2"+ can be attractive for its high throughput, self-amorphization and the presence of fluorine, many studies have shown that the fluorine successfully reduce TED, its energy needs to be well optimized with respect to the boron's, therefore BF_2"+ does not present the right fluorine/boron energy ratio for the optimum junction formation. In this work we optimize the fluorine energy for boron energies down to 200eV. We show the dependence of optimized ...

UK PubMed Central (United Kingdom)

Oxidative stress has been implicated in the etiology of age-related muscle loss (sarcopenia). However, the underlying mechanisms by which oxidative stress contributes to sarcopenia have not been thoroughly...Full Text Available

UK PubMed Central (United Kingdom)

E-cadherins belong to a family of membrane-bound, cellular adhesion proteins. Their adhesive properties mainly involve the two N-terminal extracellular domains (EC1 and EC2). The junctions between these...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The method is used for repairing armored logging cables. It consists of preparing armor, subsequent connection of current-conducting strands and wires of the armor, and laying of the armor. Sections of connecting the wires of the armor of the lower and upper layers are scattered over the length of the fused section of the cable. In order to improve the fault strength of the cable, the junctions of connection of the armor wires are scattered among themselves at a distance determined by the Euler formula, and thermal tempering of the wire sections is carried out near these junctions, and then the fused section of the cable is reinforced.

International Nuclear Information System (INIS)

Twenty rheumatoid arthritis (RA) patients with involvement of the cranio-cervical junction (CCJ) were given CT scan. In most cases the myelo-CT technique with the lumbar injection of small quantities of non-ionic contrast medium was adopted; CT easily diagnosed the horizontal and vertical dislocations on the CCJ, the bone strcture lesions and the inflammatory masses. A high frequency of medullary compressions was also found in these patients. Myelo-CT appears to be the technique of choice for the precise definition of the various factors responsible for the neurological complications found in RA of the CCJ.

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a ...

Energy Technology Data Exchange (ETDEWEB)

An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for terrestrial as well as for space ...

Energy Technology Data Exchange (ETDEWEB)

In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

International Nuclear Information System (INIS)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.

International Nuclear Information System (INIS)

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

International Nuclear Information System (INIS)

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

Science.gov (United States)

This is the first of a series of monthly reports summarizing the status of the work of the National Accelerator Laboratory. This first report will cover developments since the publication of the Design Report in January. Authorization hearings were held before the Joint Committee on Atomic Energy on February 21, 1968. Dr. Wilson described the plans and designs of the Laboratory. The present plan of the Laboratory is that the Village of Weston will be utilized for office, laboratory, and shop space during construction. The Laboratory business office is already occupying several houses. The linac section is occupying three houses for offices and construction of an 8,000 sq ft laboratory building for linac work is almost complete. Another house is being used and a 4,500 sq ft inflatable building is being constructed for model-magnet and vacuum testing. Other temporary buildings will be constructed for use by other sections. We plan to move into the village as rapidly as is feasible and it ...

International Nuclear Information System (INIS)

A new polarized electron gun for use on the SLC at SLAC has been built and tested. It is a diode gun with a laser driven GaAs photocathode. It is designed to provide short (2ns) pulses of 10 A at 160 kV at 120 Hz. The design features of the gun and results from a testing program on a new and dedicated beam line are presented. Early results from operation on the SLC will also be shown.

Energy Technology Data Exchange (ETDEWEB)

The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination ...

Energy Technology Data Exchange (ETDEWEB)

Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

British Library Electronic Table of Contents (United Kingdom)

Objectives The optimal timing of pyeloplasty for children diagnosed with ureteropelvic junction obstruction (UPJO) after workup for antenatal hydronephrosis is disputed. We sought to examine the potential costs and clinical outcomes of treatment protocols featuring different indications for pediatric pyeloplasty using Markov models. Methods Cost and outcomes analysis using Markov modeling was performed for three treatment algorithms: medical management, immediate pyeloplasty (during the first year of life), and pyeloplasty after no improvement on imaging. The costs were determined from the perspective of the medical institution. The variables tracked during Markov model simulation included age at resolution of UPJO, the proportion of patients with worsened hydronephrosis, the number of pye...

DEFF Research Database (Denmark)

We present a theoretical study of the resonant interaction between dynamical localized states (discrete breathers) and linear electromagnetic excitations (EE's) in Josephson junction ladders. By making use of direct numerical simulations we find that such an interaction manifests itself by resonant steps and various sharp switchings (voltage jumps) in the current-voltage characteristics. Moreover, the power of ac oscillations away from the breather center (the breather tail) displays singularities as the externally applied dc bias decreases. All these features may be mapped to the spectrum of EE's that has been derived analytically and numerically. Using an improved analysis of the breather tail, a spectroscopy of the EE's is developed, The nature of breather instability driven by localized EE's is established.

Energy Technology Data Exchange (ETDEWEB)

Tunneling spectroscopy of normal-insulator-superconductor junction is investigated theoretically. In anisotropic superconductors, differently from the case of isotropic superconductor, the effective pair potentials felt by quasiparticles depend on the direction of their motion. By taking this effect into account, it is shown that the conductance spectra strongly depend on the crystal orientation. Using Green`s function method, local density of states (LDOS) in superconductor is also calculated. The close relation between conductance spectra and LDOS is presented. The calculation is compared with experimental spectra of high-{Tc} superconductors.

International Nuclear Information System (INIS)

A small cholangiocarcinoma was detected at autopsy in a patient with thorotrastosis who died from the rupture of esophageal varices at the esophagogastric junction. Prior to the advent of recent diagnostic imaging technique, a correct antemortem diagnosis could only be obtained from tumor markers. However, the tendency for the opacity of the liver to decrease slowly with time and develop uneven trabeculation suggests that small tumors may be difficult to detect against such a non-homogeneous background. (author).

Energy Technology Data Exchange (ETDEWEB)

A comprehensive understanding of dopant activation mechanisms in crystalline Si is required in order to form shallow junctions. In this paper, we will review several experimental assessments on boron clustering and novel methods to form shallow junctions. Boron marker-layer structures have been used to investigate the fundamental aspects of formation and ripening boron-interstitial clusters (BICs) and their influence on the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the sub-amorphizing range and annealed at high temperatures. We found that BICs act as a sink for interstitials at supersaturations values S(t)>10{sup 4}. This implies that silicon self-interstitial defects are the primary source of interstitials driving TED, and that BICs act as a secondary 'buffer' for the interstitial supersaturation. These clusters are less sensitive to the ripening ...

Energy Technology Data Exchange (ETDEWEB)

A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

Energy Technology Data Exchange (ETDEWEB)

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article ...

Energy Technology Data Exchange (ETDEWEB)

Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

Energy Technology Data Exchange (ETDEWEB)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K{sub {alpha}} X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K{sub {alpha}} X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the conditions necessary ...

Energy Technology Data Exchange (ETDEWEB)

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

International Nuclear Information System (INIS)

Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that by N2 plasma.

Energy Technology Data Exchange (ETDEWEB)

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs reactions studied are ...

Energy Technology Data Exchange (ETDEWEB)

A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.

Energy Technology Data Exchange (ETDEWEB)

A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

Energy Technology Data Exchange (ETDEWEB)

This thesis details the first direct ultrafast measurements of the dynamic thermal expansion of a surface and the temperature dependent surface thermal diffusivity using a two-color reflection transient grating technique. Studies were performed on p-type, n-type, and undoped GaAs(100) samples over a wide range of temperatures. By utilizing a 90 fs ultraviolet probe with visible excitation beams, the effects of interband saturation and carrier dynamics become negligible; thus lattice expansion due to heating and subsequent contraction caused by cooling provided the dominant influence on the probe. At room temperature a rise due to thermal expansion was observed, corresponding to a maximum net displacement of {approximately} 1 {Angstrom} at 32 ps. The diffracted signal was composed of two components, thermal expansion of the surface and heat flow away from the surface, thus allowing a determination of the rate of expansion as well as the surface thermal diffusivity, ...

Energy Technology Data Exchange (ETDEWEB)

Performance of SRF cavities are limited by non-linear localized effects. The variation of local material characters between "hot" and "cold" spots is thus of intense interest. Such locations were identified in a BCP-etched large-grain single-cell cavity and removed for examination by high resolution electron microscopy (SEM), electron-back scattering diffraction microscopy (EBSD), optical microscopy, and 3D profilometry. Pits with clearly discernable crystal facets were observed in both "hotspot" and "coldspot" specimens. The pits were found in-grain, at bi-crystal boundaries, and on tri-crystal junctions. They are interpreted as etch pits induced by surface crystal defects (e.g. dislocations). All "coldspots" examined had qualitatively low density of etching pits or very shallow tri-crystal boundary junction. EBSD revealed the crystal structure surrounding the pits via crystal phase orientation mapping, while 3D profilometry gave information ...

CERN Document Server

We analyze the impact of trap states in the oxide layer of a superconducting tunnel junctions, on the fluctuation of the Josephson critical current, thus on coherence in superconducting qubits. Two mechanisms are usually considered: the current blockage due to repulsion at the occupied trap states, and the noise from electrons hopping across a trap. We extend previous studies of noninteracting traps to the case where the traps have on-site electron repulsion inside one ballistic channel. The repulsion not only allows the appropriate temperature dependence of 1/f noise, but also is a control to the coupling between the computational qubit and the spurious two-level systems inside the oxide dielectric. We use second order perturbation theory which allows to obtain analytical formulae for the interacting bound states and spectral weights, limited to small and intermediate repulsions. Remarkably, it still reproduces the main features of the model as identified from the ...

Energy Technology Data Exchange (ETDEWEB)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD ...

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

Energy Technology Data Exchange (ETDEWEB)

The classical phenomenon of position-effect variegation (PEV) is the mosaic expression that occurs when a chromosomal rearrangements moves a euchromatic gene near heterochromatin. A striking feature of this phenomenon is that genes far away from the junction with heterochromatin can be affected, as if the heterochromatic state {open_quotes}spreads.{close_quotes} We have investigated classical PEV of a Drosophila brown transgene affected by a heterochromatic junction {approximately} 60 kb away. PEV was enhanced when the transgene was locally duplicated using P transposase. Successive rounds of P transpose mutagenesis and phenotypic selection produced a series of PEV alleles with differences in phenotype that depended on transgene copy number and orientation. As for other examples of classical PEV, nearby heterochromatin was required for gene silencing. Modifications of classical PEV by alterations at a single site are unexpected, and these ...

Science.gov (United States)

The author points out that errors in certain measurements are preventing improvements in coke: thermocouples (errors caused by the thermocouple installation and variations in the temperature of the cold junctions); dilatometers (errors caused by size of heating block and differences in starting temperature led to differences between two instruments); errors in measuring the bulk density of the coking charge. The elimination of these sources of error in determinations of the technological and physical properties of coke oven charge should assist in the study of other problems which are delaying improvements in blast furnace coke production.

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Roentgenological analysis of the anterior chest wall was performed in twenty six patients with sternocostoclavicular hyperostosis. Initial hyperostotic change was seen at the first costosternal junction with ventral protrusion. Hyperostosis gradually developed around the first ribs, and irregular hyperostotic changes were also seen along the costoclavicular ligaments. Even in the final stage, however, sternoclavicular joint spaces were well preserved. These findings suggest that sternocostoclavicular hyperostosis is a disorder initiated around the costal cartilage including the periosteum and perichondrium, and that arthritis is not a condition stemming from that disorder.

International Nuclear Information System (INIS)

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge"+-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

International Nuclear Information System (INIS)

Josephson effect heterodyne mixers with external local oscillators are very promising low noise mm-wave receivers for applications such as radio astronomy. Experiments at 36 GHz have shown that both the noise and the conversion efficiency of mixers made using Nb point contacts are in quantitative agreement with values calculated from the resistively shunted junction (RSJ) model. Preliminary measurements at 140 GHz suggest that this agreement extends to higher frequencies. In this paper the theoretical limits to the sensitivity of such receivers are explored as a function of the signal frequency. (Auth.).

British Library Electronic Table of Contents (United Kingdom)

Background This report describes the authors? experience with a unique endoluminal, endoscopically delivered and retrieved gastroduodenojejunal bypass sleeve, including short-term weight loss and changes in comorbidities. Methods A prospective, single-center trial was designed. The patients were morbidly obese individuals who met the National Institutes of Health criteria for bariatric surgery. The device used was a unique gastroduodenojejunal bypass sleeve secured at the esophagogastric junction with endoscopic and laparoscopic techniques and designed to create an endoluminal gastroduodenojejunal bypass. At completion of the trial, the device was explanted with endoscopic retrieval. The primary end points were safety and incidence of adverse events. The secondary outcomes included the per...

British Library Electronic Table of Contents (United Kingdom)

Botulinum neurotoxin is produced by the bacterium, Clostridium botulinum. The neurotoxin inhibits acetylcholine at the neuromuscular junction, thus interfering with overall muscular contraction. Botulinum neurotoxin is commonly used for the following medical conditions: cervical dystonia, upper limb spasticity, blepharospasm, strabismus, and hyperhydrosis. However, the use of botulinum neurotoxin was recently approved for the prophylaxis of headaches in adults with chronic migraines. The proposed mechanism of botulinum neurotoxin is no longer solely limited to the inhibition of acetylcholine. There are new mechanisms emerging that involve inhibition of proinflammatory agents and neuropeptides involved in chronic pain. Consequently, there is a disruption of the overall sensory feedback loop...

Energy Technology Data Exchange (ETDEWEB)

Self-expanding metallic stent insertion has been widely applied for the palliative treatment of malignant esophageal strictures. Although it is known as an easy, safe, and effective procedure, complications are well known and include things such as stent migration and esophageal stent occlusion caused by tumor in growth. However, metallic stent fractures have been rarely reported in the esophagus, especially for nitinol stents. We report a case of a stent fracture associated with migration in a patient with a malignant esophageal stricture near the gastroesophageal junction. It is highly probable that the stent fracture was due to chemical erosion of the stent caused by gastric juice

International Nuclear Information System (INIS)

Classical beam line ion implantation is limited to low energies and cannot achieve P+/N junctions requested for <45nm ITRS node. RTA (rapid thermal annealing) needs to be improved for dopants activation and damage reductions. Spike annealing process also induces a large diffusion mainly due to TED (transient enhanced diffusion). Compared to conventional beam line ion implantation limited to a minimum energy implantation of 200eV, plasma immersion ion implantation (PIII) is an emerging technique to get ultimate shallow profiles (as-implanted) due to no lower limitation of energy and high dose rate. On the another hand, laser thermal processing (LTP) allows to obtain very shallow junction with no TED, abrupt profile and activated depth control. In this paper, we show the implementation of the BF_3 PIII associated with the LTP. Ions from BF_3"+ plasma have been implanted in 200mm n-type silicon wafers with energies from 100eV to 1keV and doses ...

CERN Document Server

Large scale magnetic field measurements and mapping

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We report measurements of the temperature dependence of the threshold current of GaAs, 1.3-..mu..m InGaAsP, and 1.5-..mu..m InGaAsP double heterostructure lasers using short electrical pulses. T/sub 0/approx.200 K is observed for all the lasers. These high T/sub 0/ values show that the carrier density at threshold does not increase rapidly with increasing temperature in any of the lasers studied and thus the observed low cw T/sub 0/ of InGaAsP lasers is primarily due to a decrease of the carrier lifetime at threshold with increasing temperature.

International Nuclear Information System (INIS)

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

International Nuclear Information System (INIS)

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

UK PubMed Central (United Kingdom)

We consider the problem of minimal (multiplicative) complexity of polynomial multiplication and multiplication in finite extensions of fields. For infinite fields minimal complexities are known [Winograd,...Full Text Available

Science.gov (United States)

An interest in electronic materials has led me to investigate new synthetic approaches to III-V' type semiconducting (13-15, current IUPAC designation for B and N groups in the Periodic Table) and magnetic (3-15) compounds. It is now possible to prepare binary (GaAs and GdP) and ternary mixed-metal (Al[sub x]Ga[sub 1-x]As) and mixed-pnictide (GaP[sub x]As[sub 1-x]) compounds in seconds from rapid, low-temperature-initiated metathesis reactions between a metal (III) trihalide and a trisodium pnictide, exemplified by MX[sub 3] + Na[sub 3]Pn [yields] MPn + 3 NaX, where M is Al, Ga, In, (Al,Ga), or a lanthanide; X is F, Cl, or I; and Pn is P, As, Sb, or (P,As). The precursors are mixed together in a dry box and ignited by light grinding with a mortar and pestle, or by brief, local heating from a hot filament. These reactions are very exothermic (calculated [Delta]H[sub rxn] (GaAs) = 138 kcal/mol) and typically reach temperatures in excess ...

International Nuclear Information System (INIS)

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier ...

Energy Technology Data Exchange (ETDEWEB)

The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the transient-enhanced diffusion of dopants in the creation of ultra-shallow junctions, a vital step in the further miniaturization of device structures, positron beams have played a pivotal role in providing an insight into the mechanisms underlying this phenomenon, being able to detect FV complexes in implanted and annealed samples. Secondary Ion Mass Spectrometry has provided complementary information on fluorine concentrations so that the nature of the F{sub m}V{sub n} complexes can be further assessed. New results on Si and SiGe structures are presented.

Science.gov (United States)

The infection of cultured human cells with baboon endogenous virus (BEV) frequently leads to an association of viral DNA with a specific genetic locus (termed BEVI, for baboon endogenous virus infection) on chromosome 6. Restriction endonuclease digestion of DNA from BEV-infected human cells and their derived somatic cell clones frequently revealed a common cellular DNA sequence in the proximity of one of the junctions between cellular DNA and the integrated virus. We propose that a short cellular DNA sequence, repeated on chromosome 6 and separated by unique DNA sequences, presents a high-affinity target for the integration of BEV in human cells. PMID:6401843

Science.gov (United States)

Oxide charge on the sidewalls of SiO{sub 2} embedded silicon wires with 20x20 nm{sup 2} cross section is shown to influence the Schottky barrier height for Pd{sub 2}Si/Si junctions positioned on the end surfaces of the wires. Compared with results on planar silicon surfaces, the electron barrier height is 0.3 eV lower for wires investigated as fabricated. By increasing the oxide charge through irradiation by ultraviolet light, the electron barrier decreases by an additional 0.15 eV and the hole barrier correspondingly increases by about the same amount. The phenomenon is explained by assuming an oxide charge density in the range of 10{sup 12} cm{sup -2}.

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The fully depleted pn-junction charge coupled device (pn-CCD) has been developed as a detector for X-ray imaging and high-resolution spectroscopy for the X-ray satellite missions XMM and ABRIXAS. If the detector is exposed to a particle radiation environment, the energy resolution is degraded due to charge transfer losses and a dark current increase. In a first experiment, prototype devices were irradiated with 10 MeV protons. After completion of the detector development, the proton irradiation was repeated for a quantitative study of the radiation damage, relevant for the satellite missions. The irradiation test was extended by a 5.5 MeV {alpha}-particle and a 6 keV X-ray exposure of the pn-CCD, including the CAMEX preamplifier chip.

CERN Document Server

A recurrent idea in the study of complex systems is that optimal information processing is to be found near bifurcation points or phase transitions. However, this heuristic hypothesis has few (if any) concrete realizations where a standard and biologically relevant quantity is optimized at criticality. Here we give a clear example of such a phenomenon: a network of excitable elements has its sensitivity and dynamic range maximized at the critical point of a non-equilibrium phase transition. Our results are compatible with the essential role of gap junctions in olfactory glomeruli and retinal ganglionar cell output. Synchronization and global oscillations also appear in the network dynamics. We propose that the main functional role of electrical coupling is to provide an enhancement of dynamic range, therefore allowing the coding of information spanning several orders of magnitude. The mechanism could provide a microscopic neural basis for psychophysical laws.

International Nuclear Information System (INIS)

Staircase current-voltage (I-V) characteristics, observed at 77 K in narrow 2DEG channels irradiated by a single line scan of a focused ion beam (FIB), is reported in detail. These staircases are interpreted as evidence of single electron tunneling through a naturally occurring specific Coulomb island in the random potential fluctuations created by FIB damage. Clear comparison is made between the I-V's taken from wide channels and those from narrow channels. Based on orthodox calculations of the I-V characteristics, it is shown that highly asymmetric tunnel junctions are needed to explain our data. This is consistent with the random nature of the potential landscape in the FIB damaged region. (author).

British Library Electronic Table of Contents (United Kingdom)

A 46-year-old man was referred to us after he presented to his local physician complaining of difficulty eating. Upper gastrointestinal endoscopy revealed a tumor at the esophagogastric junction (EGJ), and moderately differentiated adenocarcinoma was diagnosed from the biopsy findings. Computed tomography (CT) showed apparent enlargement of the pretracheal lymph nodes, the lymph nodes around the bilateral recurrent laryngeal nerves, and the lower thoracic paraesophageal lymph nodes, confirming metastasis. Since the disease was far advanced esophagogastric cancer with marked lymph node metastases throughout the mediastinum, curative resection would have been unlikely. Thus, he was commenced on systemic chemotherapy with cisplatin (90 mg/body, day 8) + S-1 (120 mg/body/day, given for 3 weeks...

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental conditions.

Energy Technology Data Exchange (ETDEWEB)

Computer simulations of two-junction, concentrator tandem solar cell performance show that IR-sensitive bottom cells are required to achieve high efficiencies. Based on this conclusion, two novel concentrator tandem designs are under investigations: (1) a mechanically stacked, four-terminal GaAs/GaInAsP (0.95 eV) tandem, and (2) a monolithic, lattice-matched, three-terminal InP/GaInAs tandem. In preliminary experiments, terrestrial concentrator efficiencies exceeding 30% have been achieved with each of the above tandem designs. Methods for improving the efficiency of each tandem type are discussed. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Midway Labs currently produces a 335x concentrator module that has reached as high as 19{percent} active area efficiency in production. The current production module uses the single crystal silicon back contact SunPower cell. The National Renewable Energy Lab has developed a multi junction cell using GalnP/GaAs technologies. The high efficiency ({gt}30{percent}) and high cell voltage offer an opportunity for Midway Labs to develop a tracking concentrator module that will provide 24 volts in the 140 to 160 watt range. This voltage and wattage range is applicable to a range of small scale water pumping applications that make up the bulk of water pumping solar panel sales. {copyright} {ital 1997 American Institute of Physics.}

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

Energy Technology Data Exchange (ETDEWEB)

In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector {approx} 1.13 cm{sup 2} in area is fabricated on a thin ( {approx} 35{mu}m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.

Energy Technology Data Exchange (ETDEWEB)

A combination of erosion and corrosion at the Victoria Junction coal preparation plant in Sydney, Nova Scotia was causing serious problems. Schedule 80 mild steel pipes were starting to fail as well as some quarter-inch steel plates in the lauders and chutes. Some corrosion tests were carried out and the high chloride level in the process water was felt to be the single most important contribution to the corrosion problem. Cast basalt was selected as a solution to the pipe wear problem. Three different types of abrasion/corrosion-resistant tiling - basalt tiles, kalceram tiles and ceramic tiles were well suited to the chloride conditions at this plant.

International Nuclear Information System (INIS)

Short communication.

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

The conventional treatment of quantum field theories including tachyons is presented, in particular the phi"4 theory. (W.D.L.).

International Nuclear Information System (INIS)

The main trends of research carried out in remote handling systems in the fields of ergonomy, robotics and reliability are presented.

International Nuclear Information System (INIS)

The author briefly discusses definition of terms, gives an introduction to measurement techniques and describes the characteristics of various low-frequency fields and their causes using typical examples: natural electric fields (thunderstroms), natural magnetic fields, technical electric constant fields (urban transportation, households), static magnetic fields (urban transportation, nuclear magnetic resonance imaging), technical electric alternating fields (high-voltage transmission lines, households), and magnetic alternating fields (high-voltage transmission lines). The author discusses both occupational exposure and that of the general public while underpinning his statements by numerous tables, measurement diagrams and charts. (Uhe).

Science.gov (United States)

... Title : FINITE ELEMENT OPTIMIZATION OF FIELD CONFIGURATION FOR THE EDDY CURRENT TESTING OF ROLLER BEARING RIB RINGS. ...

Energy Technology Data Exchange (ETDEWEB)

The US Department of Energy (DOE) Office of Remedial Action and Waste Technology established the Technical Measurements Center (TMC) at the DOE Grand Junction Projects Office (GJPO) in Grand Junction, Colorado, to standardize, calibrate, and compare measurements made in support of DOE remedial action programs. Outdoor radon concentration measurements were made by the TMC in Shiprock, New Mexico, to compare two different methods of measuring radon in an attempt to determine the feasibility of using passive alpha-track detectors to assess the adequacy of remedial action undertaken at the Shiprock uranium mill tailings pile. The results of the first three quarters of monitoring have been detailed in previous reports. An analysis of the data from the fourth quarter of monitoring at Shiprock reveals a somewhat poorer correlation between the two sets of measurements than was seen in the third quarter of this study, but a better correlation than was ...

CERN Document Server

We calculate the quarkonium dissociation rate in the P and CP-odd domains (bubbles) that were possibly created in heavy-ion collisions. In the presence of the magnetic field produced by the valence quarks of colliding ions, parity-odd domains generate electric field. Quarkonium dissociation is the result of quantum tunneling of quark or antiquark through the potential barrier in this electric field. The strength of the electric field in the quarkonium comoving frame depends on the quarkonium velocity with respect to the background magnetic field. We investigate momentum, electric field strength and azimuthal dependence of the dissociation rate. Azimuthal distribution of quarkonia surviving in the electromagnetic field is strongly anisotropic; the form of anisotropy depends on the relation between the electric and magnetic ...

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)b2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed ...

Energy Technology Data Exchange (ETDEWEB)

Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In/sub 1-//sub y/(Al/sub x/Ga/sub 1-//sub x/)/sub y/P-In/sub 1-//sub y/ (Al/sub x/Ga/sub 1-//sub x/)/sub y/P quantum well heterostructures grown lattice matched (yapprox. =0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (J/sub th/approx.10/sup 4/ A/cm/sup 2/, 625 nm) of diodes fabricated from the same crystal is described.

International Nuclear Information System (INIS)

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, including the ...

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with room-temperature hole concentrations varying from ...

Science.gov (United States)

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor linearity of the ...

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

International Nuclear Information System (INIS)

The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range of 1#centre dot#10"1"7 cm"-"3 - 10"1"8 cm"-"3. (author)

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

International Nuclear Information System (INIS)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

Energy Technology Data Exchange (ETDEWEB)

The study of interaction of tachyons with superluminal electromagnetic fields has been undertaken and it has been shown that the energy of this interaction is similar to that of bradyons with ordinary electromagnetic fields except that the roles of virtual and longitudinal parts are interchanged. It has also been shown that the interaction of tachyons with superluminal electromagnetic fields in time-energy representation is identical to the interaction of bradyons with ordinary electromagnetic fields in space-momentum representation. 19 references.

Scientific Electronic Library Online (English)

Abstract in english We present a detailed derivation of the effective dielectric constant to be used in the dispersion relation for electrostatic waves in the case of a plasma immersed in a inhomogeneous magnetic field, with inhomogeneity perpendicular to the direction of the magnetic field.

Energy Technology Data Exchange (ETDEWEB)

The authors have investigated here whether tachyons can move in stable circular orbits in Kerr, Kerr-Newmann and Lewis fields owing to their dragging effect. It is found that stable circular orbits are possible only in a Lewis field.

Science.gov (United States)

A new type of radiation which occurs when particles are accelerated in the field of a longitudinal wave and in a transverse magnetic field is studied. The characteristics of such spontaneous radiation are obtained, and the influence of collective effects on the radiation is analyzed. The application of the findings to the theory of free electron lasers is discussed. 8 references.

UK PubMed Central (United Kingdom)

The receptive field of a neuron reflects its function. For example, for parallel fiber (PF) inputs in C3 zone the cerebellar cortex, the excitatory and inhibitory receptive fields of a Purkinje cell...Full Text Available

International Nuclear Information System (INIS)

The energy-momentum tensor of a massless spinor field is constructed and studied based on the previously proposed interpretation of quantum effects of such a field in the anisotropic metric of Bianchi type IX. The characteristic properties of the energy-momentum tensor in the mixed universe model are discussed.

Energy Technology Data Exchange (ETDEWEB)

Comparison of dosimetry measured in a noncylindrical Rando-Alderson phantom by two-field, four-field, and six-field total-skin electron-beam therapy (TSEBT) techniques with our dual-field rotational (DFR) technique reveals a superior dosimetry for the latter. Our technique of dual-field rotational DFR-TSEBT is described in detail, and its advantages and indications for the primary management of cutaneous T-cell lymphoma (CTCL) and Kaposi's sarcoma (KS) are discussed.

UK PubMed Central (United Kingdom)

OBJECTIVE--The study was performed to examine the influence of the exposure to magnetic fields in the potrooms of an electrolysis plant on the occurrence of musculoskeletal symptoms among the employees....Full Text Available

International Nuclear Information System (INIS)

An overview is given the expected amount of natural gas that can be produced from small gas fields in the Netherlands in the next 20 years.

International Nuclear Information System (INIS)

... range magnetic fields magnetic susceptibility magnetization neutron diffraction

British Library Electronic Table of Contents (United Kingdom)

Academic, government, and industrial field researchers have generated a significant database of field studies of the volatility of soil applied fumigants. However, limited work exists in validating physical models against field volatility data sets and fully exploring the volatility parametric response surface. Field studies quantifying atmospheric flux for soil fumigants 1,3-dichloropropene and chloropicrin are validated against the United States Department of Agriculture (USDA Salinity Laboratory) soil physics model CHAIN_2D that was modified specifically for agronomic uses of soil fumigants. Comparison between model predictions and field observations for six unique field trials in five different states indicate that CHAIN_2D effectively captures the magnitude and duration of fumigant em...

International Nuclear Information System (INIS)

... parameters magnetic fields magnetic properties magnetization monocrystals

International Nuclear Information System (INIS)

The first cohomology of the Virasoro algebra with coefficients in string fields are investigated. The relation between them and the Nambu-Goto action for a closed string is established. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of excess interstitials ...

Energy Technology Data Exchange (ETDEWEB)

The analytical results of blowdown characteristics and its thrust force were compared with the experiment, which were performed as pipe whip tests under the PWR LOCA conditions on the hypothetical accident of guillotine break of pipes. The blowdown thrust force was obtained by the integral momentum equation about single-phase flow, homogeneous and separated two-phase flow, assuming critical pressure at the exit if critical flow condition was satisfied. The following results are obtained: (1) The node-junction method is useful for the analysis of water hammer phenomena and of the blowdown thrust force. (2) The Henry-Fauske model for subcooled critical flow is effective for the analysis of the maximum thrust force under the PWR LOCA conditions. The jet thrust parameter of analysis and experiment is 1.08. (3) The thrust parameter of saturated blowdown has the same one with the value under pressurized condition when the stagnant pressure is chosen as the saturated one. ...

Science.gov (United States)

We examined the subcellular localization of ryanodine receptors (RyR) in the cardiac muscle of carp using biochemical, immunohistochemical, and electron microscopic methods and compared it with those of rats and guinea pigs. To achieve this goal, an anti-RyR antibody was newly raised against a synthetic peptide corresponding to an amino acid sequence that was conserved among all sequenced RyRs. Western blot analysis using this antibody detected a single RyR band following the SDS-PAGE of sarcoplasmic reticulum (SR) membranes from carp atrium and ventricle as well as from mammalian hearts and skeletal muscles. The carp heart band had slightly greater mobility than those of mammalian hearts. Although immunohistochemical staining showed evident striations corresponding to the Z lines in longitudinal sections of mammalian hearts, clusters of punctate staining, in contrast, were distributed ubiquitously throughout carp atrium and ventricle. Electron microscopic images of the carp myocardium ...

International Nuclear Information System (INIS)

The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose of 1x10"1"4 cm"-"2 Si"+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices and enhanced diffusion of the buried boron marker layers was measured for anneals at 810, 950, and 1050 degree C. A linearly decreasing dependence of diffusivity enhancement on decreasing Si"+ ion range is observed at all temperatures, extrapolating to #approx#1 for 0 keV. This is consistent with our expectation that at zero implantation energy there would be no excess interstitials from the implantation and hence no TED. Monte Carlo modeling and continuum simulations are used to fit the experimental data. The results are consistent with a surface recombination length for interstitials of <10 nm. The data presented here demonstrate that in the range of annealing temperatures of interest for p-n junction formation, TED is ...

International Nuclear Information System (INIS)

Non-Hodgkin lymphoma is a common feature of AIDS. Approximately 30-40% of these tumors exhibit clinical features suggestive of endemic Burkitt lymphoma: they are aggressive malignancies that occur in association with Epstein-Barr virus infection, they arise in the setting of immunosuppression, and they carry t(8;14) translocations without detectable rearrangement of the MYC oncogene. To understand the molecular basis of these parallels, the authors analyzed a case of Epstein-Barr-positive AIDS-associated undifferentiated lymphoma. Southern blots show that the tumor exhibits immunoglobulin joining segment rearrangement but no rearrangement of the MYC oncogene. Cloning of the rearranged joining segment allowed the isolation of recombinant clones encompassing the translocation breakpoint, and sequencing of the translocation junction disclosed that the breakpoint is situated 7 base pairs from the chromosome 14 site involved in a previously described endemic Burkitt ...

International Nuclear Information System (INIS)

An attempt was made to minimize the channeling tail by implantation along a random equivalent direction following a careful alignment of the target. In order to analytically determine the random equivalent directions, critical angles for channeling were mapped on a stereogram. Boron ions with energies of 17 and 45 keV are implanted along specified directions determined from the map. The depth distribution of the dopant is profiled by SIMS and the effects of water orientation upon the channeling tail are noted. Industrial common use of a 7"0 tilt is not optimum. However, implantation with the wafer tilted at 5.5 +/- 0.5"0 from the surface normal and rotated at 7.0 +/- 0.5"0 from a (100) plane shows the least channel-tail compared to implantation along other directions. Rapid thermal annealing (RTA) is a promising annealing method for shallow junction formation. Transient enhanced diffusion of implanted boron is observed. Two different mechanisms for the boron ...

Energy Technology Data Exchange (ETDEWEB)

This document describes the geology and hydrogeology at the former Advanced Coal Liquefaction Research and Development (ACLR&D) facility in Wilsonville, Alabama. The work was conducted by personnel from the Oak Ridge National Laboratory Grand Junction office (ORNL/GJ) for the U.S. Department of Energy (DOE) Pittsburgh Energy Technology Center (PETC). Characterization information was requested by PETC to provide baseline environmental information for use in evaluating needs and in subsequent decision-making for further actions associated with the closeout of facility operations. The hydrogeologic conceptual model presented in this report provides significant insight regarding the potential for contaminant migration from the ACLR&D facility and may be useful during other characterization work in the region. The ACLR&D facility is no longer operational and has been dismantled. The site was characterized in three phases: the first two phases were an ...

International Nuclear Information System (INIS)

We present an approach for fabrication of intentionally positioned epitaxial InAs QDs in a micron sized light emitting diode. For site-selective growth, a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation technology in an all-ultra-high-vacuum (UHV) setup has been employed. Single dot occupancy of almost 55 % on FIB patterned nano-depressions was successfully achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding these QDs in the intrinsic part of a GaAs-based micron sized p-i-n junction device. Few or single dot are expected to be electrically addressed in these devices. We report results from electroluminescence (EL) measurement which proves the single dot characteristics of our device. The EL spectra consist of sharp emission lines and their dependence on injection current shows linear behavior for exciton and quadratic ...

Energy Technology Data Exchange (ETDEWEB)

Blood flow changes in the periodontal ligament (PDL) were measured indirectly by monitoring the local clearance of /sup 125/I/sup -/ during electric sympathetic nerve stimulation or close intra-arterial infusions of either noradrenaline (NA) or adrenaline (ADR) before and after administration of phentolamine (PA), phenoxybenzamine (PBZ) or Idazoxan (RX). At the doses used in the present study, PA was the only antagonist that significantly reduced the blood flow decrease seen on activation of sympathetic fibers, although PBZ also reduced this response. Idazoxan, however, did not induce the consistent effect on blood flow decreases seen on sympathetic activation. All three ..cap alpha..-adrenoceptor antagonists almost abolished the effects of exogenously administered NA and ADR. The results suggest the presence of functional post-junctional adrenoceptors of both the ..cap alpha.. 1 and ..cap alpha.. 2 subtypes in the sympathetic regulation of the blood flow in the ...

Energy Technology Data Exchange (ETDEWEB)

As semiconductor device dimensions continue to shrink, the drive beyond 250 nm is creating significant problems for the device processor. In particular, trends toward shallower-junctions, lower thermal budgets and simplified processing steps present severe challenges to ion implantation. In parallel with greater control of the implant process goes the need for a better understanding of the physical processes involved during implantation and subsequent activation annealing. For instance, the need for an understanding of dopant-defect interaction is paramount as defects mediate a number of technologically important phenomena such as transient enhanced diffusion and impurity gettering. This paper will outline the current trends in the ion implantation and some of the challenges it faces in the next decade, as described in the semiconductor roadmap. It will highlight some recent positron annihilation work that has made a contribution to addressing one of these ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050&hthinsp;{degree}C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1{percent} and 10{percent}, though it appears to be closer to 1{percent} for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3{times}10{sup 14} and 1{times}10{sup 15} cm{sup {minus}2}. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in ...

Energy Technology Data Exchange (ETDEWEB)

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced diffusion, and the ...

Energy Technology Data Exchange (ETDEWEB)

The research on the therapy of brain tumors and others by the thermal neutron irradiation using research reactors is to kill tumor cells by accumulating boron at a tumor part, and using {alpha} particles and {sup 7}Li generated by {sup 10}B(n, {alpha}){sup 7}Li reaction of thermal neutrons, which is known as boron neutron capture therapy (BNCT). In Japan Atomic Energy Research Institute, the medical irradiation facility was installed in the thermal neutron column of the JRR-2, and as of March, 1994, 22 cases of irradiation have been carried out. In order to monitor the variation of thermal neutron flux during irradiation, the real time measurement using a simultaneous monitor is carried out, but there is the variation of measured values in the Si semiconductor, p-n junction detector possibly due to its direction dependence. The experiment was carried out to quantity the direction dependence of the detector by using the neutron radiography facility at the JRR-3M. Si ...

International Nuclear Information System (INIS)

Nuclear Engineering Laboratory of the Technical Research Centre of Finland has widely used RELAP5/MOD2 and -MOD3 codes to simulate horizontal steam generators. Several models have been developed and successfully used in the VVER-safety analysis. Nevertheless, the models developed have included only rather few nodes in the steam generator secondary side. The secondary side has normally been divided into about 10 to 15 nodes. Since the secondary side at the steam generators of VVER-440 type reactors consists of a rather large water pool, these models were only roughly capable to predict secondary side flows. The paper describes an attempt to use RELAP5/MOD3 code to predict secondary side flows in a steam generator of a VVER-440 reactor. A 2D/3D model has been developed using RELAP5/MOD3 codes cross-flow junctions. The model includes 90 volumes on the steam generator secondary side. The model has been used to calculate steady state flow conditions in the secondary ...

KoreaScience (Korea)

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KoreaScience (Korea)

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CERN Document Server

We study the dynamics of the scalar tensor cosmological model in the presence of tachyon field. In an alternative approach, in two exponential and power law form of the scalar field functions in the model, field equations are solved by simultaneously best fitting the model parameters with the most recent observational data. This approach gives us an observationally verified interpretation of the dynamics of the universe. We then discuss the best fitted of equation of state parameter, the statefinder parameters and the reconstructed scalar field in the model.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

... fields magnetic moments neel temperature neutron diffraction order-disorder

Energy Technology Data Exchange (ETDEWEB)

The influence of rigid-body and differential rotation and of a fine-scale chaotic magnetic field and a poloidal magnetic field on the minimum mass of a main-sequence star is investigated. It is shown that rotation and a magnetic field with an energy equal to 10--20% of the star's gravitational energy increase the minimum mass of a main-sequence star by 1.5--2 times.

CERN Document Server

A last look at the green field, in the triangular wedge of land stray radiation near the CERN accelerators.

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KoreaScience (Korea)

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KoreaScience (Korea)

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Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

KoreaScience (Korea)

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KoreaScience (Korea)

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Science.gov (United States)

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UK PubMed Central (United Kingdom)

This study investigated the effects of electromagnetic fields on enzymes involved in purine metabolism in human peripheral blood mononuclear cells in vitro. Cells were obtained from 20 volunteers. We...Full Text Available

International Nuclear Information System (INIS)

This paper presents some situations, in which measurements of electromagnetic fields generated by transmission lines and substations should be performed. The range of measurements may differ, but maximum values of electric and magnetic fields and flux density must be identified in all situations. The area with electric field exceeding 1 kV/m should be identified as well. The author also presents basic requirements to be met by the measurement technique. These requirements are specified according to the national standard. Special attention should be paid to the identification of the spatial distribution of electric field and flux density generated in the vicinity of high voltage transmission lines. To verify the measurement results, it is necessary to calculate the distribution of both aforesaid field components. For environmental protection purposes, it is also proposed that the ...

International Nuclear Information System (INIS)

Three dimensional temperature field and helium flow field of TBM are simulated using the general purpose computational fluid dynamics (CFD) code FLUENT. The temperature distribution of Be Armor, Be Pebble Bed, Li_4SiO_4 Pebble Bed, Structure Material of TBM, and helium flow field in the cooling pipe are presented. The research indicates that the work temperature of each material is under the material temperature allowed except some places where high temperature should be excluded in the design. The results will provide references for further optimized thermal hydraulic design of ITER China TBM. (authors)