CERN Document Server

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage ...

Energy Technology Data Exchange (ETDEWEB)

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs solar cell on ...

Energy Technology Data Exchange (ETDEWEB)

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is ...

Energy Technology Data Exchange (ETDEWEB)

GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup ...

Energy Technology Data Exchange (ETDEWEB)

The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).

Energy Technology Data Exchange (ETDEWEB)

A device made of amorphous silicon which exhibits inductive properties at certain voltage biases and in certain frequency ranges in described. Devices of the type described can be made in integrated circuit form.

Energy Technology Data Exchange (ETDEWEB)

A monolithic micromachined waveguide device or devices with low-loss, high-power handling, and near-optical frequency ranges is set forth. The waveguide and integrated devices are capable of transmitting near-optical frequencies due to optical-quality sidewall roughness. The device or devices are fabricated in parallel, may be mass produced using a LIGA manufacturing process, and may include a passive component such as a diplexer and/or an active capping layer capable of particularized signal processing of the waveforms propagated by the waveguide.

Science.gov (United States)

An integrated mirrorless bistable optical device based on the Mach-Zehnder interferometric optical switch has been proposed and demonstrated experimentally using a Ti:LiNbO3 waveguide. The resulting device is capable of combining more than two of them to realize multifunctional optical devices such as optical multivibrators.

Energy Technology Data Exchange (ETDEWEB)

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an ...

Energy Technology Data Exchange (ETDEWEB)

An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for terrestrial as well as ...

Science.gov (United States)

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

UK PubMed Central (United Kingdom)

We have developed miniature (≈1 μm diameter) microcavity surface-plasmon-resonance sensors (MSPRS), integrated them with microfluidics and tested...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit current densities are due to short diffusion lengths, we have ...

International Nuclear Information System (INIS)

Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 #mu#m was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence ...

British Library Electronic Table of Contents (United Kingdom)

The individuality of production devices should be taken into account when statistical models are designed for parallelized devices. In the present work, a new clustering method, referred to as NC-spectral clustering, is proposed for discriminating the individuality of production devices. The key idea is to classify samples according to the differences of the correlation among measured variables, since the individuality of production devices is expressed by the correlation. In the proposed NC-spectral clustering, the nearest correlation (NC) method and spectral clustering are integrated. The NC method generates the weighted graph that expresses the correlation-based similarities between samples, and the constructed graph is partitioned by spectral clustering. A new statistical process monit...

Energy Technology Data Exchange (ETDEWEB)

The current status of non-silicon photovoltaic solar cells is discussed including the identification of current technical and economic issues and future research directions for potential high efficiency low cost technologies. This review covers such advanced materials as CdS/Cu/sub 2/S, CdS/CuInSe/sub 2/, and GaAs homojunction and heterojunction devices; such emerging materials as InP, Zn/sub 3/P/sub 2/ and CdTe; and liquid junction electrochemical photovoltaic cells. An attempt is made to compare the current relative status of these various technologies and to indicate their near term potential where possible. 105 refs.

Energy Technology Data Exchange (ETDEWEB)

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

International Nuclear Information System (INIS)

We study a quantum computing system using microwave photons in transmission line resonators on a superconducting chip as qubits. We show that linear optics and other controls necessary for quantum computing can be implemented by coupling to Josephson devices on the same chip. By taking advantage of the strong nonlinearities in Josephson junctions, photonic qubit interactions can be realized. We analyze the gate error rate to demonstrate that our scheme is realistic even for Josephson devices with limited decoherence times. As a conceptually innovative solution based on existing technologies, our scheme provides an integrated and scalable approach to the next key milestone for photonic qubit quantum computing.

International Nuclear Information System (INIS)

Trends in front-end-of-line technology are discussed. At the chip level, many of the important parameters are published in the National Technology Roadmap for Semiconductors in 1994. At the device and circuit level, both bipolar and CMOS are scalable. However, the large standby power of bipolar circuits severely limits the integration level of bipolar chips. The inherently low standby power of CMOS, on the contrary, allows the integration level of CMOS circuits to continue increasing with scaling. In reality, both the electric field and power density of CMOS devices have been gradually rising over the generations owing to non-scaling effects of thermal voltage and silicon bandgap. As power supply voltage reaches 1.5V and below, circuit performance can only be gained at the expense of higher active or standby power of the chip. Implications of device scaling on contact and silicide ...

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

(Al{sub y}Ga{sub 1{minus}y}){sup 1{minus}x}In{sub x}P semiconductor alloys lattice-matched to GaAs are widely used in visible optoelectronic devices. One of the most recent developments in this area is the AlGaInP-based red vertical cavity surface emitting laser (VCSEL). These lasers, which employ AlGaInP active regions and AlGaAs distributed Bragg reflectors (DBRs), have demonstrated continuous-wave (CW) lasing over the 630--690 nm region of the spectrum. Applications for these lasers include plastic fiber data communications, laser printing and bar code scanning. In this paper, the authors present an overview of recent developments in the processing and performance of AlGaInP based VCSELs. This overview will include a review of the general heterostructure designs that have been employed, as well as the performance of lasers fabricated by both ion implantation and selective oxidation.

Energy Technology Data Exchange (ETDEWEB)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

British Library Electronic Table of Contents (United Kingdom)

Individuals who use augmentative and alternative communication (AAC) depend on technology to meet their daily needs and form relationships. Speech generating devices (SGDs) are integral components of communication systems. Reliability of SGDs is critical for effective use in everyday life. This study examined the reliability of new SGDs and found that mean time to first failure was 42.7 (SD = 41.2) weeks and at least 40% required repairs within the first year of use. The components that most frequently broke down were touch screens, wiring, main boards, batteries, memory cards, and AC adaptors. The costs of repairing SGDs were analyzed. The clinical implications of device breakdown are identified for key stakeholders, including clients, families, service providers, funding agencies, and ma...

Energy Technology Data Exchange (ETDEWEB)

The invention concerns a device for the energy-saving heating of fuel in the supply pipe to an internal combustion engine to regain energy from the fuel itself, particularly but not exclusively for a Diesel engine. A part of the quantity of heat added to the fuel between the tank and the injection nozzles is given up by excess fuel not to the tank, but to the fuel lifted upstream of the injection pump. The device is characterised by the fact that it has a heat exchanger, which absorbs heat from the fuel at the level of the injection pump or upstream of it, and takes this to the fuel above the injection pump. The heat exchanger is preferably mounted upstream of a filter and close to it. A bridging pipe, which may be integrated in the heat exchanger, permits the heat exchanger to be short-circuited depending on the fuel temperature.

Science.gov (United States)

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor ...

International Nuclear Information System (INIS)

A program was undertaken to radiation harden an existing power integrated circuit technology (BCDMOS) to total dose, gamma dot, SEU, and neutrons. Efforts have centered around hardening and optimizing our CMOS, DMOS, and NPN devices. Initial results indicate a substantial improvement in hardness over our existing commercial technology.

Energy Technology Data Exchange (ETDEWEB)

The safe function of a new pipe whip restraint device has been demonstrated in a full scale test. The restraint is based on using a shape memory alloy to protect a pipe and its environment in the event of a double-ended-guillotine-break. The evaluation test has been performed at boiling water reactor (BWR) operating pressure and temperature using a pipe representing BWR primary piping. (orig.) 2 refs.

Energy Technology Data Exchange (ETDEWEB)

A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

International Nuclear Information System (INIS)

The tremendous heat generated in a computer chip or very large scale integrated circuit raises many challenging issues to be solved. Recently, liquid metal with a low melting point was established as the most conductive coolant for efficiently cooling the computer chip. Here, by making full use of the double merits of the liquid metal, i.e. superior heat transfer performance and electromagnetically drivable ability, we demonstrate for the first time the liquid-cooling concept for the thermal management of a computer chip using waste heat to power the thermoelectric generator (TEG) and thus the flow of the liquid metal. Such a device consumes no external net energy, which warrants it a self-supporting and completely silent liquid-cooling module. Experiments on devices driven by one or two stage TEGs indicate that a dramatic temperature drop on the simulating chip has been realized without the aid of any fans. The higher the ...

Energy Technology Data Exchange (ETDEWEB)

The purpose of the Microelectronic Evaluation Laboratory at Sandia is to develop a program for evaluating CMOS LSI (complementary metal oxide silicon - large scale integrated) technology devices which are being used for the first time in a weapon system. These evaluations are based on accelerated aging studies and electrical tests to determine the reliability and life of the devices. In accelerated aging, specific, controlled stresses are applied to the device to accelerate time-to-failure. Data are used tin mathematical models to estimate life in acutal use. The stresses used for this technology are temperature and voltage. The devices are stored at temperatures with or without voltage applied (steady-state or cyclical) and periodically tested until at least 50% failures are encountered. Since most current technologies use epoxy-die-attachment, aging temperatures must be under ...

International Nuclear Information System (INIS)

The results of experiments received on the plasma focus (PF) device with energy stored equal 4 kJ are represented. Photos of the current plasma sheath (CPS), pre-pinch, sphere-like plasma formations are produced with help of the electron-optical converter contained a gated micro-channel plate (MCP) and the CCD-camera imaging system in the visible region. The redial velocity of the CPS is about 107 cm/s. Neon plasma electron density measured with help of the interferograms in the visible region and the spectra in the soft X-ray region is equals to 3?1018 cm-3. Electron temperature is equal to about 200 eV. Discharge integral photos were obtained with help of the soft X-ray pinhole camera. Pictures with 2 ?s resolution of the plasma luminescence above PF anode region were made by CCD-camera.

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...

Energy Technology Data Exchange (ETDEWEB)

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

International Nuclear Information System (INIS)

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga"+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).

Energy Technology Data Exchange (ETDEWEB)

Encouragement and incentives ar being given in many counties to the electricity industry and private sector to install, own and operate renewable energy systems. The impact of renewable energy installations connected to the grid or operating independently is an important issue concerning the technical and economic viability of harnessing these emerging energy sources. This paper brings out the need for developing and implementing a strategy for comprehensive and accurate protection and control systems for these dispersed generator installations. It appears that a combination of discrete and fuzzy logic devices on an integrated platform will be a novel technique for the protection and control schemes. This development has the potential to be cost effective and suits the requirements for operating renewable energy systems safety. (author). 2 figs., 16 refs.

Energy Technology Data Exchange (ETDEWEB)

This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The University of Groningen (RUG) has developed an expert system on cleaning of biomass producer gas. This work was carried out in close co-operation with the Biomass Technology Group B.V. (BTG) in Enschede, The Netherlands within the framework of the EC supported JOR3-CT95-0084 project. The expert system was developed as a tool for the designer-engineer of downstream gas cleaning equipment and consists of an information package and a flowsheet package. The packages are integrated in a client/server system. The flowsheeting package of the expert system has been designed for the evaluation of different gas cleaning methods. The system contains a number of possible gas cleaning devices such as: cyclone, fabric filter, ceramic filter, venturi scrubber and catalytic cracker. The user can select up to five cleaning steps in an arbitrary order for his specific gas cleaning problem. After specification of the required design parameters, the system ...

Energy Technology Data Exchange (ETDEWEB)

The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

International Nuclear Information System (INIS)

This paper describes the performance of AlGaN/GaN HEMTs with 2.4 #mu#m source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 #mu#m source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

Energy Technology Data Exchange (ETDEWEB)

This paper deals with conversions of solar energy efficiently into electricity and into gas laser radiation. In the first section, a review study of the possibility of a solar-electric thermophotovoltaic (TPV) device has been done. In a proposed extension of the TPV concept, a Cassagranian optical system concentrates solar radiation to heat a blackbody cavity to 2400/sup 0/K. A double-layer solar cell, GaAs and Si, forming the cylindrical surface concentric to the blackbody cavity, receives the blackbody radiation and converts it into electricity efficiently. A cell conversion efficiency of 50% or more would be possible with the TPV system. The second section explores the concept of blackbody radiation pumping of gas laser media as a step toward utilization of solar energy as a laser pumping source. To demonstrate this concept, an experiment was performed in which various gas mixtures of CO/sub 2/ and He were exposed to 1500/sup 0/K thermal ...

International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

J-STORE (Japan)

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J-STORE (Japan)

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Energy Technology Data Exchange (ETDEWEB)

The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been observed. At last has ...

Energy Technology Data Exchange (ETDEWEB)

This manual describes the use of the Xyce Parallel Electronic Simulator. Xyce has been designed as a SPICE-compatible, high-performance analog circuit simulator, and has been written to support the simulation needs of the Sandia National Laboratories electrical designers. This development has focused on improving capability over the current state-of-the-art in the following areas: (1) Capability to solve extremely large circuit problems by supporting large-scale parallel computing platforms (up to thousands of processors). Note that this includes support for most popular parallel and serial computers; (2) Improved performance for all numerical kernels (e.g., time integrator, nonlinear and linear solvers) through state-of-the-art algorithms and novel techniques. (3) Device models which are specifically tailored to meet Sandia's needs, including some radiation-aware devices (for Sandia users only); and (4) ...

CERN Document Server

Integrating mission and strategy for nonprofit organizations

Indian Academy of Sciences (India)

integration with available technology and initiatives ...

International Nuclear Information System (INIS)

A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

Energy Technology Data Exchange (ETDEWEB)

The following work deals with the realization, characterization and modeling of GaInP / AlGaInP high power semiconductor laser diodes in the visible wavelength range. In addition to the exploration and optimization of efficiency, temperature stability and maximum output power of multi-mode lasers especially methods for longitudinal and lateral mode stabilization of high power laser diodes have been investigated. Although often the focus of optimization is on the threshold current density, in this work the performance of the laser diode for an operation point around 1 Watt under continous wave operation is regarded as the figure of merit. It turns out that low carrier densities are key for an efficient reduction of the heterobarrier leakage currents. In addition, large optical cavity structures with low internal losses enable high external quantum efficiencies even for long cavities. Finally high laser effiency as well as an efficient cooling leads to a reduced temperature load for the ...

Energy Technology Data Exchange (ETDEWEB)

We present two new techniques that enhance conventional focused ion beam (FIB) system capabilities for integrated circuit (IC) analysis: in situ electrical biasing and voltage contrast imaging. We have used in situ electrical biasing to enable a number of advanced failure analysis applications including (1) real time evaluation of device electrical behavior during milling and deposition, (2) verification of IC functional modifications without removal from the FIB system, and (3) ultraprecision control for cross sectioning of deep submicron structures, such as programmed amorphous silicon antifuses. We have also developed FIB system voltage contrast imaging that can be used for a variety of failure analysis applications. The use of passive voltage contrast imaging for defect localization and for navigation on planarized devices will be illustrated. In addition, we describe new, biased voltage contrast imaging techniques and ...

International Nuclear Information System (INIS)

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the elongated grains resulted in ...

Energy Technology Data Exchange (ETDEWEB)

For a wider application of GaAs single crystals for semiconductor devices a cheaper process to grow crystals with high purity and low dislocation density is required. According to todays knowledge the Czochralski method with a hot wall vessel should be the choice. The temperature of the vessel has to be 700deg C to avoid condensation of arsenic which vapourizes from the 1240deg C hot melt. Arsenic vapour is very agressive against all metals. Therefore the corrosion resistance of metals and alloys with a high melting point and also ceramics has been tested. All the alloys under investigation are corroded severely so that they have to be excluded as a material for the vessel. The metals tantalum, molybdenum and tungsten are more resistent, titanium forms initially a thick protection layer and further corrosion is greatly reduced. The ceramics investigated (TiB{sub 2}; ALN; Makor; BN) are not attacked by arsenic though they may store some arsenic. ...

Energy Technology Data Exchange (ETDEWEB)

The purpose of this research was to develop a methodology for sizing integrated renewable energy systems, useful for rural areas, using simulation and optimization tools developed in MATLAB 6.0. The sizing model produces a system with minimum cost and high reliability level, based on the concept of loss of power supply probability (LPSP) for consecutive hours. An optimization model is presented and three different sizing scenarios are calculated and compared, showing flexibility in the elaboration of different project conceptions. The obtained results show a complete sizing of the energy conversion devices and a long-term cost evaluation. (author)

Energy Technology Data Exchange (ETDEWEB)

The technical complexity of intraoperative radiotherapy (IORT) requires modification of the standard physical and dosimetric methods used in external electron beam therapy. At the National Cancer Institute, a number of technical innovations have been integrated into ongoing clinical studies of IORT. These include: (1) an electron beam applicator system that is significantly different from other IORT systems and includes customized squircle applicators; (2) peripheral dose shields; (3) a modified surgical table replacing the standard radiation treatment couch; and (4) routine use of multiple IORT fields that necessitates field matching. The IORT applicator system and related devices and techniques are dosimetrically characterized in detail both for use in the IORT program and in order to illustrate many useful facets of electron dosimetry.

Energy Technology Data Exchange (ETDEWEB)

In recent years conservation of electric power has become an integral part of utility planning. The 1980 Pacific Northwest Electric Power Planning and Conservation Act (Northwest Power Act) requires that the region consider conservation potential in planning acquisitions of resources to meet load growth. The Bonneville Power Administration (BPA) developed its first estimates of conservation potential in 1982. Since that time BPA has updated its conservation supply analyses as a part of its Resource Program and other planning efforts. Major updates were published in 1985 and in January 1990. This 1992 document presents updated supply curves, which are estimates of the savings potential over time (cumulative savings) at different cost levels of energy conservation measures (ECMs). ECMs are devices, pieces of equipment, or actions that increase the efficiency of electricity use and reduce the amount of electricity used by end-use equipment.

Science.gov (United States)

Direct coupljng between Al and Au metal]jzations can result in an increase in gate resistance due to a metallurgical reaction. (purple plague). An RF life test on ...

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In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).

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New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

Science.gov (United States)

The efficiency of two thin-film diffusion barriers to be used in silicide/aluminum metallization schemes for silicon integrated circuits were evaluated. Control samples of Si/CoSi{sub 2}/Al and Si/Pd{sub 2}Si/Al, and test samples of Si/CoSi{sub 2}/Ta{sub 2}N/Al, Si/CoSi{sub 2}/W/Al and Si/Pd{sub 2}Si/Ta{sub 2}N/Al were used for sheet resistance, X-ray diffraction, Rutherford backscattering, and Auger-electron spectroscopic measurements. TEM studies were carried out on representative samples to examine the nature of the interfaces. Results from the analytical tests indicated that all three types of test samples are resistant to gross diffusion and intermixing of Co, Pd, Al and Si. They also showed that in the control samples, annealing causes interdiffusion of these species, necessitating the presence of a diffusion barrier. For test contacts, results demonstrated that although diffusion barriers may be successful in preventing metallurgical interdiffusion, they may ...

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Direct injection diesel engines power most of the heavy-duty vehicles. Due to their superior fuel economy, high power density and low carbon dioxide emissions, turbocharged, small bore, high speed, direct injection diesel engines are being considered to power light duty vehicles. Such vehicles have to meet stringent emission standards. However, it is difficult to meet these standards by modifying the in-cylinder thermodynamic and combustion processes to reduce engine-out emissions. After-treatment devices will be needed to achieve even lower emission targets required in the production engines to account for the anticipated deterioration after long periods of operation in the field. To reduce the size, mass and cost of the after-treatment devices, there is a need to reduce engine-out emissions and optimize both the engine and the aftertreatment devices as one integrated system. For example, the trade-off ...

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No abstract prepared.

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a ...

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In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

International Nuclear Information System (INIS)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.

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Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.

International Nuclear Information System (INIS)

Deep level effects in GaAs MOSFET have been characterised in the ohmic channel using DLTS, low frequency excess noise and dispersion technique. An isothermal multi exponential curve fitting method has been devised and implanted into the DLTS system. Multi exponential curve fitting method used to decompose a multi exponential transient into its constituents so that the peak signature can be better characterised for the case whereas several peaks are closely spaced. Low frequency excess noise and dispersion techniques also confirm the trap in signature of the same traps observed in the DLTS measurements. (author)

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

Energy Technology Data Exchange (ETDEWEB)

Preliminary tests have shown that smart-grid systems can significantly reduce home electricity use. A smart grid negates the need for controlled distribution by giving homeowners the ability to monitor rates in real time and modify their use based on energy availability, need and price. Homeowners can also feed the grid alternative power to offset their costs. Studies in the United States have also suggested that the system could reduce carbon emissions by 60 to 211 million tonnes per year. The smart grid would also be less susceptible to major disturbances because it draws power from multiple sources. An added benefit is that the technology could be developed for a fraction of the cost of building traditional energy plants, such as nuclear. However, the success of the smart-grid depends on several technological advances. The flow of power within the system must be digitally controlled and also merged with multiple communication devices so that monitoring is ...

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We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100&hthinsp;{degree}C on polyester substrates. Critical to our success has been the development of a processing cluster tool containing chambers dedicated to laser crystallization, dopant deposition, and gate oxidation. Our TFT fabrication process integrates multiple steps in this tool, and uses the laser to crystallize deposited amorphous silicon as well as create heavily doped TFT source/drain regions. By combining laser crystallization and doping, a plasma enhanced chemical vapor deposition SiO{sub 2} layer for the gate dielectric, and postfabrication annealing at 150&hthinsp;{degree}C, we have succeeded in fabricating TFTs with I{sub ON}/I{sub OFF} ratios {gt}5{times}10{sup 5} and electron mobilities {gt}40 cm{sup 2}/V&hthinsp;s on polyester substrates. {copyright} {ital 1999 American Vacuum Society.}

Science.gov (United States)

The paper deals with the modeling and the development of a numerical procedure for the analysis of shape-memory alloy (SMA) elements in order to predict the main features of SMA devices. A 3D SMA model in the framework of small strain theory is developed starting from the thermo-mechanical model proposed by Souza et al. (Eur J Mech A/Solids 17:789-806, 1998) and modified by Auricchio and Petrini (Int J Numer Methods Eng 55:1255-1284, 2002). The aim of this paper is to propose some more modifications to the original model, to derive its consistent 1D formulation, to clarify the mechanical meaning of the material parameters governing the constitutive model. A robust time integration algorithm is developed in the framework of the finite element method and a new beam finite element is proposed. Some numerical applications and a comparison with experimental data available in literature are carried out in order to assess the ability of the proposed ...

International Nuclear Information System (INIS)

Security is an essential element of information technology (IT) infrastructure and applications. Concerns about security of networks and information systems have been growing along with the rapid increase in the number of network users and the value of their transactions. The hasty security threats have driven the development of security products known as Intrusion Detection Systems (IDS) and Intrusion Prevention Systems (IPS) to detect and protect the network, server and desktop infrastructure ahead of the threat. Authentication and signing techniques are used to prevent integrity threats. Users, devices, and applications should always be authenticated and authorized before they are allowed to access networking resources. Though a lot of information is available on the internet about IDS and IPS but it all is spread on so many sites and one has to spend a considerable part of his precious time to search it. In this regard a thorough survey has ...

Energy Technology Data Exchange (ETDEWEB)

Kawasaki Steel has modernized blast furnace control systems featuring an integrated instrumentation and electrical system for each sub-process, a human-machine interface through a single window, and a distributed process computer system. A furnace diagnosis system, which has been known as 'GO-STOP system', has been developed to a knowledge-based system that enables to provide appropriate action guidance. For the burden distribution control, controllability and flexibility have been improved by the use of a bell-less-top charging device. For hot stove control, the automatic setting of a combustion gas flow rate and improved efficiency have been achieved by a fuzzy control system. Furthermore, the remote operation of cast house equipment has been realized and contributed to improve the working environment and the efficient operation at Chiba Works No. 6 blast furnace. (author)

Energy Technology Data Exchange (ETDEWEB)

General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that ...

Energy Technology Data Exchange (ETDEWEB)

Focus ion beam (FIB) technology is a commonly used tool for integrated circuit device modification, failure analysis, and a variety of other applications. However, limited reliability data of FIB altered circuit is available. This study describes the electromigration mechanism of FIB-altered Al(Cu-Si)/Ti-layered metal lines. The electromigration failures encountered resulted in Al voids at the anode end of FIB-deposited W and Al{sub 2}Cu precipitates at the cathode end. A higher frequency of Al extrusions was also observed on samples stressed at higher temperatures. These observations indicated that FIB-W was an effective blocking boundary for Al and Cu, and confirmed that Cu does electromigrate before Al. The electromigration mechanism of the FIB-altered line closely resembles the published results from two-level Al/W-line/stud interconnect studies. An activation energy of 0.66 eV, with a current exponent of 1.9 and a lognormal sigma of 0.55, ...

International Nuclear Information System (INIS)

The leak before break (LBB) concept is difficult to apply to a structure with a thin tube that is immersed in a water environment. A heat exchanger in a nuclear power plant is such a structure. The present paper addresses an application of the LBB concept to a heat exchanger in a nuclear power plant. The minimum leaked coolant amount containing the radioactive material which can activate the radiation detector device installed near the heat exchanger is assumed. The postulated initial flaw size that cannot grow to the critical flaw size within the time period to activate the radiation detector is justified. In this case, the radiation detector can activate the warning signal caused by coolant leakage from initially postulated flaws of the heat exchanger. The nuclear plant can safely shutdown when this occurs. Since the postulated initial flaw size can not grow to the critical flaw size, the structural integrity of the heat exchanger is not ...

Energy Technology Data Exchange (ETDEWEB)

Successful interface engineering requires compositional and electronic material characterization as a prerequisite for understanding and intentionally generating interfaces in photovoltaic devices. The paper gives an overview with several examples, all referring to Cu(In,Ga)(S,Se){sub 2} ('CIGSSe')-based solar cells, with an emphasis on characterization using highly specialized methods, such as elastic recoil detection analysis, X-ray emission spectroscopy and photoelectron spectroscopy using synchrotron and ultraviolet light for excitation, inverse photoemission spectroscopy and Kelvin probe force microscopy. First, the determination of the depth profile of the band gap energy E{sub g} in the absorber layer is demonstrated. The modification of E{sub g} towards both interfaces is discussed in terms of beneficial electronic effects. Next, the interface between absorber and buffer layers with alternative and promising non-toxic materials is ...

International Nuclear Information System (INIS)

In the fields of medical imaging, geophysical well logging, and industrial radiography, it is often of interest to characterize the spatially distributed sensitivities of neutron and gamma-ray measurement devices to the physical properties of the materials being examined. For instance, one may wish to know how the count rate in a detector varies in response to small changes in the local density of the irradiated object as a function of position. Experimental determination of such sensitivity functions is often impractical. Consequently, we have developed a general three-dimensional Monte Carlo numerical technique that allows us to directly compute the differential sensitivity of an arbitrary integral response parameter, such as a time- or energy-discriminated count rate, with respect to the spatial distribution of macroscopic cross sections and sources in the irradiated medium. Sensitivities to object density, porosity, etc., can easily be ...

Energy Technology Data Exchange (ETDEWEB)

The device is designed for automatic testing of the degree of discharge of tractive storage batteries (AB) for electric loaders, electric cars and electric ore locomotives. The basic electrical schematic of the device is cited.

International Nuclear Information System (INIS)

A new polarized electron gun for use on the SLC at SLAC has been built and tested. It is a diode gun with a laser driven GaAs photocathode. It is designed to provide short (2ns) pulses of 10 A at 160 kV at 120 Hz. The design features of the gun and results from a testing program on a new and dedicated beam line are presented. Early results from operation on the SLC will also be shown.

Energy Technology Data Exchange (ETDEWEB)

The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination ...

UK PubMed Central (United Kingdom)

An unusual S1-nuclease sensitive microsatellite (STMS) has been found in the single copy, rat polymeric immunoglobulin receptor gene (PIGR) terminal exon. In Fisher rats, elements within or beyond the...Full Text Available

Science.gov (United States)

... MTR 93B0000095 Proposed Network Security Policy for Integrated Tactical Warning ... Proposed Network security Policy for Integrated Tactical ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

A constructive method is proposed to solve a class of massive Feynman integrals within the Negative Dimensional Integration Method. The results are compared with the ones given by known positive D models and expressed in terms of dimensionally and analytically regularized integrals 3 refs.

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack ...

Science.gov (United States)

Integrating phytotechnologies with energy crop production for biofuels, bioenergy, and bioproducts. In: Sixth International Phytotechnologies Conference ; ...

Energy Technology Data Exchange (ETDEWEB)

We write a path-integral expression for the Green function of a advected scalar on a fluid flux. (author)

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International Nuclear Information System (INIS)

Single-event burnout (SEB) sensitivity was tested for power MOSFET devices, JTMCS081 and JTMCS062, which were made in Institute of Microelectronics, Chinese Academy of Sciences, using californium-252 simulation source. SEB voltage threshold was found for devices under test (DUT). It is helpful for engineers to choose devices used in satellites. (authors)

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... amplification exhaust systems fluidic control devices gloveboxes pressure

International Nuclear Information System (INIS)

... bwr type reactors closures fluidic control devices operation performance pwr

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... fluidic control devices performance reactor control systems space propulsion

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A centering device for casing tubings is proposed. It includes a housing, collar made of copper linings, return springs and pusher with centering pins placed in it. In order to simplify the design of the centering device it is equipped with levers installed on the pusher rod and connected by hinges to one another. The centering device assures coaxial placement of tubes over the mouth of wells and installation of butt joints during welding of tubes.

Energy Technology Data Exchange (ETDEWEB)

Achieving device independence for software applications is required for all but a small number of critical real time applications. Device independence is achieved by establishing protocols and building protocol interpreters for the specific devices. Data structures containing pointers to functions provide a flexible architecture for implementing protocol translation. 3 refs., 5 figs.

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In the PV system with storage batteries, as a maximum power point tracking (MPPT) device is used to enhance battery charging, the enhancement must be greater than the internal loss of the device itself, or there will be no net gain at all. To evaluate the MPPT device benefits under different climate, the theoretical calculation models have been constructed. By simulation, a comparative study between two types of PV charge controllers with and without a MPPT device under different atmospheric conditions was presented. The comparison was made by means of the energy production obtained from the PV generator of each system. The climatic conditions of Beijing and Guangzhou in China have been regarded. From the results obtained it can be concluded that the effectiveness of the MPPT device in Guangzhou is not very obvious, however the MPPT device did greatly enhance ...

CERN Document Server

Choosing a medical device is complex and requires a transparent process based on reason, evidence and assessment of prioritized public health needs. Poor choices lead to inappropriate use or non-use of medical devices and a waste of resources.This report suggests how an agenda to improve access to appropriate medical devices could be devised from applying the crucial 4 components - Availability, Accessibility, Appropriateness, and Affordability, to the 15 global high-burden diseases and some cross-cutting issues. The results of this exercise suggest several areas of research necessary to help

International Nuclear Information System (INIS)

Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 A within 3000 A wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier-carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in InGaAs but may be due to stimulated emission in InGaAsN. The results reveal that the carrier dynamics is ...

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe how this concept ...

Energy Technology Data Exchange (ETDEWEB)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K{sub {alpha}} X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K{sub {alpha}} X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the conditions necessary ...

Energy Technology Data Exchange (ETDEWEB)

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

International Nuclear Information System (INIS)

Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that by N2 plasma.

Energy Technology Data Exchange (ETDEWEB)

A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

Energy Technology Data Exchange (ETDEWEB)

A review is given of the state-of-the-art of single and polycrystalline solar cells, which includes a short theoretical review, laboratory achievements, and production methods. The Si single and polycrystalline cell and the amorphous Si cell are described, including material preparation, crystal and sheet growth, and cell and panel production. Promising second generation thin film solar cells including GaAs, CdS(CuInSe/sub 2/), and CdTe are briefly described. Economical aspects are discussed.

Energy Technology Data Exchange (ETDEWEB)

A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

Energy Technology Data Exchange (ETDEWEB)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

Science.gov (United States)

In an earlier paper (Phys. Rev. Lett. 66, 41 (1991)), we calculated both the dielectric constant ({epsilon}{sub {infinity}}) and the nonlinear optical susceptibilities for second-harmonic generation ({chi}{sup (2)}) in the static limit for AlP, AlAs, GaP, and GaAs in the local-density approximation with and without a self-energy correction in the form of a scissors operator,'' including local-field effects. In this paper, we expand our presentation of this calculation. Agreement with experiment to within 15% for the nonlinear susceptibility is demonstrated where experiments are available (GaP and GaAs); the dielectric constants are in no worse than 4% agreement with experiment. The virtual hole'' contributions are reformulated to avoid large numerical cancellations in the case of near degeneracies. The virtual electron'' terms dominate over the virtual hole'' terms ...

Energy Technology Data Exchange (ETDEWEB)

Four general topics are covered in respect to the natural space radiation environment: (1) particles trapped by the earth`s magnetic field, (2) cosmic rays, (3) radiation environment inside a spacecraft, (4) laboratory radiation sources. The interaction of radiation with materials is described by ionization effects and displacement effects. Total-dose effects on MOS devices is discussed with respect to: measurement techniques, electron-hole yield, hole transport, oxide traps, interface traps, border traps, device properties, case studies and special concerns for commercial devices. Other device types considered for total-dose effects are SOI devices and nitrided oxide devices. Lastly, single event phenomena are discussed with respect to charge collection mechanisms and hard errors. (GHH)

Energy Technology Data Exchange (ETDEWEB)

This document presents the integrated reactors concepts by a presentation of four reactors: PIUS, SIR, IRIS and CAREM. The core conception, the operating, the safety, the economical aspects and the possible users are detailed. From the performance of the classical integrated PWR, the necessity of new innovative fuels utilization, the research of a simplified design to make easier the safety and the KWh cost decrease, a new integrated reactor is presented: SCAR 600. (A.L.B.)

Energy Technology Data Exchange (ETDEWEB)

The advent of sophisticated automation equipment and computer hardware and software is changing the way manufacturing is carried out. To compete in the global marketplace, manufacturing companies must integrate these new technologies into their factories. In addition, they must integrate the planning, control, and data management methodologies needed to make effective use of these technologies. This paper provides an overview of recent approaches to achieving this enterprise integration. It then describes, using simulation as a particular example, a new tool`s perspective of enterprise integration.

International Nuclear Information System (INIS)

Radio frequency (RF) sheaths are suspected of limiting the performance of present-day ion cyclotron range of frequencies (ICRFs) antennas over long pulses and should be minimized in future fusion devices. Within the simplest models, RF-sheath effects are quantified by the integral VRF = ? E|| ? dl where the parallel RF field E|| is linked with the slow wave. On 'long open field lines' with large toroidal extension on both sides of the antenna it was shown that VRF is excited by parallel RF currents j|| flowing on the antenna structure. In this paper, the validity of this simple sheath theory is tested experimentally on the Tore Supra (TS) ITER-like antenna prototype (ILP), together with antenna simulation and post-processing codes developed to compute VRF. The predicted poloidal localization of high-|VRF| zones is confronted to that inferred from experimental data analysis. Surface temperature distribution on ILP front face, as well as ...

Energy Technology Data Exchange (ETDEWEB)

Laser safety standards and eye protection (filters) are designed to limit ocular exposures to prevent retinal lesions, yet eyesafe laser exposures can disrupt vision by causing glare and flashblindness. Protective filters can have opposing effects on vision function. They reduce laser exposures but also reduce task luminance and contrast. Filters alone may interfere with vision and consequently reduce work safety and performance. It is therefore important to be able to predict the effects of both laser exposures and protective filters to assess trade-offs between protection and visual function. This paper briefly reviews the methods, concepts, and experimental database used in our laboratory to predict laser, filter, and laser-plus-filter effects on tasks involving visual detection. The modeling approach uses estimates of the spatial distribution of light in the retinal image of the laser source to predict glare, flashblindness, and retinal lesions. It also considers the non-uniformity ...

International Nuclear Information System (INIS)

Thermally stable materials with low dielectric constant (k<3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant thin films in place of silicon-based materials. ...

International Nuclear Information System (INIS)

Steam generators (SG) are among the most critical components of pressurized water Nuclear Power Plants (NPP). SG tubes must provide a reliable pressure boundary between the primary and secondary cooling water. It is because that any leakage from tube defects could result in the release of radioactivity to the environment. Thus degradations of steam generators tubes should be monitored and inspected periodically under nuclear regulatory. In-service inspections of SG tubes are carried out using eddy current test (ECT) and the defected tubes are usually plugged. Because the radioactivity in the internal of SG chambers limits free access of human worker, remote manipulators are required. In South Korea, Manipulators such as the Zetec SM series and the Westinghouse ROSA series have been used. Such manipulators are rigidly mounted to manways or tube sheets of SG. Confusions for the inspected tubes may occur from deflection of the manipulators. To reduce the deflections of the manipulators ...

Energy Technology Data Exchange (ETDEWEB)

Science and technology could be revolutionized by quantum computers, but building them from solid-state devices will not be easy. Robert W Keyes of IBM's research division outlines the challenges in scaling up the technology from lab experiments to practical devices. (U.K.)

International Nuclear Information System (INIS)

The patent relates to fluid operated devices for moving articles. The machine may be used in filling a nuclear fuel canister with fuel pellets where there is a tendency for out of squareness of pellets to produce a jam condition readily cleared by a modest force. (U.K.).

Science.gov (United States)

Coke-fired cupola furnaces were improved and made suitable for the production of high-quality casting melts by numerous additional devices. Moreover, they were equipped with environmental protection systems with numerous dust separation devices and afterb...

Energy Technology Data Exchange (ETDEWEB)

In this paper we discuss the effect on the emittance of the residual dispersion in the insertion devices. The dispersion in the straights could be generated by the lattice error, trim dipole, and insertion device. The effect on the emittance is examined, and the dispersion tolerances are given for the NSLS-11.

UK PubMed Central (United Kingdom)

The biomechanical nature of the arterial system and its major disease states provides a series of challenges to treatment strategies. Endovascular device design objectives have mostly centered on short-term...Full Text Available

Science.gov (United States)

...limited to, emission control devices, pumps, filters, muck cookers, stills, solvent tanks, solvent containers, water separators...facility that meets the conditions of § 63.320(g). Muck cooker means a device for heating perchloroethylene-laden...

Science.gov (United States)

In this paper, the following topics are studied: uranium 238 effective integral; thermal range uranium 238 capture cross section; Americium 242 m capture cross section. The mentioned examples show that differential and integral experiments are both useful...

International Nuclear Information System (INIS)

... Union (INTAS), Brussels (Belgium) Science and Technology Center in Unkraine,

Energy Technology Data Exchange (ETDEWEB)

Advanced techniques for focused-ion-beam (FIB) device modification have been developed for complex, multistep modifications to circuitry on planar chip technology. Applying gas-assisted etching (GAE) techniques for high-aspect-ratio milling and the selective milling of both conductive and insulating films enhances process latitude. Localized ion-beam-induced deposition of an insulating film provides reconstructive capability in previously modified areas. The application of both techniques for complex device modification on VSLI devices fabricated with CMOS process technology is reviewed. (UK).

International Nuclear Information System (INIS)

Dosimetric studies in 80 patients examined with the tomographic device 'Somatom' are reported. The gonad doses are compared to those of conventional radiographic techniques.

Science.gov (United States)

Magnetic Forming Studies. The use of transient high magnetic-field devices has made possible the generation of very large accurately ...

International Nuclear Information System (INIS)

The objective of this study is to establish evaluation and verification guideline for the APR 1400 and to investigate the thermal-hydraulic characteristics for fluidic device is analyzed using FLUENT. The scope and major results of research are flow characteristics for fluidic device. In this study, three-dimensional numerical model for fluidic device is developed adequately for, and results are compared with experimental data performed by VAPER (VAlve Performance Evaluation test Rig) in KAERI with an aim to verify numerical simulation. In addition, the parametric study has also carried out to investigate the effect of major parameters such as velocity and pressure inside FD chamber.

Science.gov (United States)

... eV. In some instances the spontaneous radiation from a free electron laser system was employed to obtain images. The ...

International Nuclear Information System (INIS)

... fluid poison control fluidic control devices reactors scram scram rods control

Science.gov (United States)

sabot: A device fitted around or in back of a projectile in a gun barrel or launching tube to support or protect the projectile or to prevent the escape of ...

Energy Technology Data Exchange (ETDEWEB)

A slurry intake device is proposed which contains an inlet sleeve, housing with grating installed with the discharge end in the zone of the slurry outlet, and hinged deflector. In order to conserve the clay mud, it is equipped with a tie rod and two-arm lever which is kinematically linked to the deflector and the grating. It is installed by hinges in relation to the housing and the latter is attached by hinges to the inlet sleeve. The deflector is arranged in the zone of slurry outlet. The device is distinguished by the fact that the deflector is equipped with a cantilever on which a fixable weight is attached.

CERN Document Server

A self-organizing particle swarm is presented. It works in dissipative state by employing the small inertia weight, according to experimental analysis on a simplified model, which with fast convergence. Then by recognizing and replacing inactive particles according to the process deviation information of device parameters, the fluctuation is introduced so as to driving the irreversible evolution process with better fitness. The testing on benchmark functions and an application example for device optimization with designed fitness function indicates it improves the performance effectively.

Energy Technology Data Exchange (ETDEWEB)

The audible noise produced by corona on high-voltage transmission lines has several characteristics that differentiate it from other community noises. Transmission line noise is quite broadband and has a significant high frequency content. Special instrumentation designed to measure this type of noise pollution is described. All measuring systems have the same three basic elements: a transducer, a processing device, and an output device. Recorders, microphone devices, frequency analyzers, and meteorological instrumentation are discussed.

Energy Technology Data Exchange (ETDEWEB)

The purpose of the invention is to increase reliability in the operation of the device for advancing the base of a stoping unit. This is achieved because the device includes alternation hydraulic jacks of advance and control connected by hinges between themselves by the sections of the base and equipped with hydraulic locks, distributors of the hydraulic jacks of advance. In this case the hydraulic locks connected to the hydraulic jacks of control are doubled and connected to the distributors of the neighboring sections through reverse valves.

Energy Technology Data Exchange (ETDEWEB)

Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

International Nuclear Information System (INIS)

Large scale flows of liquids can be controlled by using power fluidic devices that harness the hydrodynamic properties of liquids rather than use moving parts. Included among the fluidic devices considered are fluidic pumps, reverse flow diverters, fluidic diodes and vortex amplifiers. These devices are of potential use in the nuclear industry, particularly in reprocessing. (U.K.).

UK PubMed Central (United Kingdom)

Lentiviral vectors enter cells with high efficiency and deliver stable transduction through integration into host chromosomes, but their preference for integration within actively transcribing genes...Full Text Available

Science.gov (United States)

... Infantry Division A Monograph by ... 5b. GRANT NUMBER 4. TITLE AND SUBTITLE Integration of Armored Forces in the US Army Infantry Division ...

UK PubMed Central (United Kingdom)

PurposeDescription and analysis of the effects and side-effects of integrated mental health care in the Netherlands.Context of caseDue...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A real time neutron radiography system has been developed at the University of Michigan Phoenix Memorial Laboratory (PML) and has recently been used to test the imaging capabilities of a neutron imaging device developed by Lixi, Inc. of Downers Grove, Illinois. This device uses an input phosphor that is high in gadolinium to generate a light image which is then sent through an intensifier stage to provide images that can be viewed by eye, video camera, or standard 35 mm camera. It was determined that this device provides images of much higher resolution and sensitivity than those obtained with the imaging system currently being used at PML. Using computerized image enhancement techniques, the images obtained with the Lixi neutron imaging device can then be further enhanced or processed to obtain quantitative information on the object being imaged.

Energy Technology Data Exchange (ETDEWEB)

We summarize recent developments in x-ray microscopy of polymers by focusing on the characterization of organic electronic devices. The quantitative compositions of model polymer blends have been mapped at a resolution of {approx}35 nm. Since it could be inferred that these devices have structures smaller than 35 nm, quantitative compositional mapping at length scales below the present resolution limit of x-ray microscopy is required. Organic devices thus serve to both highlight the success of NEXAFS microscopy to date, but to also outline the very real need for higher spatial resolution. New approaches to create improved optics or different acquisition modalities are required if x-ray microscopy is to make sustained contributions to such an important area of research as organic devices.

Energy Technology Data Exchange (ETDEWEB)

This invention pertains to a light weight underground pipe or cable installing device adapted for use in a narrow and deep operating trench. More particularly this underground pipe installing device employs a pair of laterally movable gates positioned adjacent the bottom of the operating trench where the earth is more solid to securely clamp the device in the operating trench to enable it to withstand the forces exerted as the actuating rod is forced through the earth from the so-called operating trench to the target trench. To accommodate the laterally movable gates positioned adjacent the bottom of the narrow pipe installing device, a pair of top operated double-acting rod clamping jaws, operated by a hydraulic cylinder positioned above the actuating rod are employed.

Energy Technology Data Exchange (ETDEWEB)

This article describes a flexible and extensible infrastructure for applying Web-Technologies to embedded systems.The presented approach develops a Three-level-Architecture consisting of the embedded system, the universal Remote-Access-Server and the Remote-Access-Client. A system-spanning general interface allows the binding of embedded systems in order to access their process data. Additionally, this procedure facilitates a flexible processing of the device data, so that it is ready to be used by different control devices. To ensure flexibility - connecting different devices on the one side and providing information for different clients like PC, PDA or mobile phone on the other side - a new XML-based description language (Service Description Markup Language - SDML) is introduced. The SDML documents contain information about connected embedded systems, reusable device data and the presentation ...

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

HANARO fuel test loop will be equipped in HANARO to obtain the development betterment of advanced fuel and materials through the irradiation test. The object of this study is to evaluate the structural integrity of FTL in-pool piping by investigating a dynamic analysis of the loop containing a postulated rupture section. The method to perform the dynamic analysis and structural integrity evaluation caused by the pipe whip in water environment can be a reference for a similar structural integrity evaluation. (author). 7 refs., 39 tabs., 34 figs.

Energy Technology Data Exchange (ETDEWEB)

Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

International Nuclear Information System (INIS)

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

Energy Technology Data Exchange (ETDEWEB)

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

CERN Document Server

Integrated femtocell/macrocell networks, comprising a conventional cellular network overlaid with femtocells, offer an economically appealing way to improve coverage, quality of service, and access network capacity. The key element to successful femtocells/macrocell integration lies in its self-organizing capability. Provisioning of quality of service is the main technical challenge of the femtocell/macrocell integrated networks, while the main administrative challenge is the choice of the proper evolutionary path from the existing macrocellular networks to the integrated network. In this article, we introduce three integrated network architectures which, while increasing the access capacity, they also reduce the deployment and operational costs. Then, we discuss a number of technical issues, which are key to making such integration a reality, and we offer ...

International Nuclear Information System (INIS)

The radiative transport problem is cast in integral form using a transport kernel. The transport kernel has an explicit representation in terms of a Feynman Path Integral over all paths between selected points in a volume. This representation is setup in detail. Numerical evaluation of this Path Integral is formulated with a Frenet-Serret based procedure for generating valid random paths, and with a numerical evaluation of the weight for each valid path. Very early sanity checks of a numerical implementation are reported. Approaches to optimization are identified. (authors)

Energy Technology Data Exchange (ETDEWEB)

Developing safe, reliable, cost-effective, and efficient hydrogen-electricity co-generation systems is an important step in the quest for national energy security and minimized reliance on foreign oil. This project aimed to, through materials research, develop a cost-effective advanced technology cogenerating hydrogen and electricity directly from distributed natural gas and/or coal-derived fuels. This advanced technology was built upon a novel hybrid module composed of solid-oxide fuel-assisted electrolysis cells (SOFECs) and solid-oxide fuel cells (SOFCs), both of which were in planar, anode-supported designs. A SOFEC is an electrochemical device, in which an oxidizable fuel and steam are fed to the anode and cathode, respectively. Steam on the cathode is split into oxygen ions that are transported through an oxygen ion-conducting electrolyte (i.e. YSZ) to oxidize the anode fuel. The dissociated hydrogen and residual steam are exhausted from the SOFEC cathode and ...

Science.gov (United States)

An interest in electronic materials has led me to investigate new synthetic approaches to III-V' type semiconducting (13-15, current IUPAC designation for B and N groups in the Periodic Table) and magnetic (3-15) compounds. It is now possible to prepare binary (GaAs and GdP) and ternary mixed-metal (Al[sub x]Ga[sub 1-x]As) and mixed-pnictide (GaP[sub x]As[sub 1-x]) compounds in seconds from rapid, low-temperature-initiated metathesis reactions between a metal (III) trihalide and a trisodium pnictide, exemplified by MX[sub 3] + Na[sub 3]Pn [yields] MPn + 3 NaX, where M is Al, Ga, In, (Al,Ga), or a lanthanide; X is F, Cl, or I; and Pn is P, As, Sb, or (P,As). The precursors are mixed together in a dry box and ignited by light grinding with a mortar and pestle, or by brief, local heating from a hot filament. These reactions are very exothermic (calculated [Delta]H[sub rxn] (GaAs) = 138 kcal/mol) and typically reach temperatures in excess ...

International Nuclear Information System (INIS)

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier ...

Energy Technology Data Exchange (ETDEWEB)

GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated tailoring damage effects of explosive devices by addition of unconventional materials, specifically combustible metals. Initial small-scale as well as full-scale testing has been performed. The explosives functioned to disperse and ignite these materials. Incendiary, enhanced-blast, and fragment-damage effect have been identified. These types of effects can be used to extend the damage done to hardened facilities. In other cases it is desirable to disable the target with minimal collateral damage. Use of unconventional materials allows the capability to tailor the damage and effects of explosive devices for these and other applications. Current work includes testing of an incendiary warhead for a penetrator.

International Nuclear Information System (INIS)

Field Programmable Gate Arrays (FPGAs) are being used in space applications because of attractive attributes: good density, moderate speed, low cost, and quick turn-around time. However, these devices are susceptible to Single Event Upsets (SEUs). An approach using triple modular redundancy (TMR) and feedback was developed for flip-flop hardening in these devices. Test data showed excellent results for this circuit topology. Total dose and Single Event Effect (SEE) testing have been performed on recently released technologies. Failures are analyzed and test methodology is discussed.

Energy Technology Data Exchange (ETDEWEB)

Recently, organic semiconducting materials have gained a broad interest due to their potential for organic electronic devices such as organic light emitting diode (OLED), organic photovoltaic devices and organic field-effect transistors (OFETs). Optical properties of organic semiconducting materials are important for practical application. For example, the power conversion efficiency of organic photovoltaic devices is mainly affected by absorption properties of organic materials. Proton irradiation is one of the efficient methods to change the optical properties of organic materials. In this paper, we investigate the changes of optical properties of various polymers using the proton irradiation.

International Nuclear Information System (INIS)

Experimentally it is shown that a movable grounded metallic plate placed inside a multi-dipole magnetic cage can vary the diffused plasma parameters such as density, plasma potential and electron temperature. Plasma is solely produced in the source section of a double plasma device by a dc hot filament discharge and a low-density plasma is produced in the target section by local ionization of neutral gas by the high energetic electrons coming from the source section. A grounded movable stainless steel plate is inserted in the target section of the device. The floating potential of the plate also changes depending on the position of the plate inside the magnetic cage.

International Nuclear Information System (INIS)

The feasibility of a high-energy electron cooling device has been studied through tests on a prototype of the electron device. The apparatus consists of a pulsed ((20-60) keV, 2#mu#s) electron gun, a drift region 1 m long and of a depressed collector for recovering the electron energy. Tests on beam optics and energy recovery have been performed, a high-energy recovery efficiency has been attained. Experimental results are discussed in this paper.

International Nuclear Information System (INIS)

Two new identical insertion devices have been designed for the Daresbury SRS. They are 2T permanent-magnet multipole wigglers that will provide high flux in the X-ray region. This paper describes the magnetic and mechanical design of the arrays of steel pole pieces and permanent-magnet blocks. Also given is the engineering design of the support structure that will cope with the very large forces present while maintaining high levels of precision in gap setting and parallelism. The engineering design has been fully assessed using finite-element techniques to predict the deflections of critical parts of the structure. These two devices are due to be installed into the SRS by the end of 1998.

International Nuclear Information System (INIS)

A novel device called the gas expansion model (GEM) is being developed at the Hanford Engineering Development Laboratory for testing in the 400-MW(th) fast flux test facility (FFTF) reactor. Incorporation of the GEM into liquid-metal reactor designs is intended to measurably contribute to the achievement of inherent safety, by allowing the reactor to passively shut down even in the extremely remote (hypothetical) event of an unprotected (no scram) loss-of-flow accident. The purpose of this paper is to describe the GEM and present predictive analyses of the effectiveness of the device during unprotected loss-of-flow experiments in the FFTF.

Science.gov (United States)

... electronic feedback system' connected to a Q switch ... The use of acousto-optic (AO) beam steering devices for BMDO (SDI) applications is very ...

British Library Electronic Table of Contents (United Kingdom)

Introduction: Patients in underdeveloped nations have limited access to life-saving medical technology including cardiac rhythm management (CRM) devices. We evaluated alternative means to provide such technology to this patient population while assessing the safety and efficacy of such a practice. Methods: Patients in the United States with clinical indications for extraction of CRM devices were consented. Antemortem CRM devices were cleaned and sterilized following a protocol established at our institution. Surveillance in vitro cultures were performed for quality assurance. The functional status of pulse generators was tested with a pacing system analyzer to confirm at least 70% battery life. Most generators were transported, in person, to an implanting institution in Nicaragua. Recipien...

Medline Plus

Enter Search terms A-Z Index Home Food Drugs Medical Devices Vaccines, Blood & Biologics Animal & Veterinary Cosmetics Radiation-Emitting Products Tobacco ...

Energy Technology Data Exchange (ETDEWEB)

We report on studies of device degradation in organic photovoltaic devices based on blends of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM). Since delamination, oxidation, and chemical interactions at the metal electrode/organic interface have long been posited as degradation pathways in organic electronic devices, we first investigated the stability of a variety of electrodes for devices stored in an inert, dark environment. Second, a set of experiments was designed to separate the effects at the metal/organic interface from the degradation of the active layer or the hole extraction interface. To do this, Ca/Al electrodes were deposited to complete half of a substrate's devices, and samples were left both under constant illumination and 10% illumination (10% duty cycle of 1 sun illumination) in a glovebox environment. After more than ...

Science.gov (United States)

... Some of Our Clients General Electric Logo BAE Systems Logo IBM Logo Analog Devices Logo More Copyright © 2000 [IEEC]. All rights...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

... Thus. thi, characteristic further buggeots, other things unchanging, that the more *multifunction" the ccna ;Ituent devices ari., t~he more efficienit the ...

Science.gov (United States)

With the increased costs of maintaining boilers and chillers entrepreneurs around the country have offered magnetic and similar devices to facilities as viable alternatives to their maintenance program. This report gives a brief history of some of the pre...

Science.gov (United States)

A device is described for transporting loads, especially for moving belt driving stations in open pit mining operations with a propelling mechanism which for lifting a respective load is operable to move into a free space formed by the load with the ground. The device comprises a plurality of lifting mechanisms, by means of which, a lifting platform can be brought into engagement with a supporting surface of the load. The device comprises at least one supporting member which is so designed that it prevents the lifting platform from lifting off lifting mechanisms. Furthermore, means are provided which permit a turning of the lifting platform relative to the lifting mechanisms about a vertical axis which is arranged in a certain relationship to the propelling mechanism.

International Nuclear Information System (INIS)

This paper reviews various techniques to harden Charged Coupled Device (CCD) sensors and the results after irradiation of three Thomson n buried channel CCDs having a different degree of hardening. It describes the major irradiation effects on CCD performances and it makes a comparison of the results between the different hardening levels. It shows good results on dark voltage after ionizing radiation for TH 7863M device hardened both by design and by operating conditions (MPP mode) with respect to the standard device TH 7863A. The irradiations were performed with "6"0Co or X-ray (10 keV) sources on devices in operating mode. (author). 3 refs., 8 figs.

Science.gov (United States)

... with the ability to capture imagery in raw 24-bit format, combined with large memory storage devices enable high resolution imagery to be captured ...

International Nuclear Information System (INIS)

Fusion device produces high-level neutrons and #gamma#-rays, which would hazard the safety of the public and workers if the doses would be higher than the regulatory limits because of leakage from the bio-shielding and skyshine. It is essential to monitor the radiation doses in the workshop and the enumerative around fusion devices. A radiation monitoring system (RMS) for full (near and far) areas around a nuclear fusion device has been designed and developed, which can achieve the monitoring and controlling of radiation doses in the workshop area by using the Controller Area Network (CAN), in the institution area by using the Bluetooth Ad hoc network based on a new tree topology formation and routing protocol and in a long range environment by using the General Packet Radio Service (GPRS) network. (authors)

British Library Electronic Table of Contents (United Kingdom)

Background We developed a tissue-engineered biphasic cartilage bone substitute construct which has been shown to integrate with host cartilage and differs from autologous osteochondral transfer in which integration with host cartilage does not occur. Questions/purposes (1) Develop a reproducible in vitro model to study the mechanisms regulating tissue-engineered cartilage integration with host cartilage, (2) compare the integrative properties of tissue-engineered cartilage with autologous cartilage and (3) determine if chondrocytes from the in-vitro formed cartilage migrate across the integration site. Methods A biphasic construct was placed into host bovine osteochondral explant and cultured for up to 8 weeks (n?=?6 at each time point). Autologous osteochondral implants served as controls...

UK PubMed Central (United Kingdom)

A nonviral vector for highly efficient site-specific integration would be desirable for many applications in transgenesis, including gene therapy. In this study we directly compared the genomic integration...Full Text Available

International Nuclear Information System (INIS)

We use functional integral techniques to calculate the scattering amplitude for four open off-shell tachyons in Witten's string field theory and show that the residues of the first three poles agree with those obtained using oscillator methods. (orig.).

UK PubMed Central (United Kingdom)

Hepatitis B virus (HBV) is clearly a factor in the development of hepatocellular carcinoma, but its mechanism of action remains obscure. One possibility is that the HBV integration event alters the...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

This report highlights the Pipeline integrity Management methods being implemented by gas companies. These aim at maintaining the current high safety level, prevent major hazards, ensure the integrity of the pipeline and protect people and environment in the vicinity of the pipeline in the most cost effective way. It should be noticed that Pipeline Integrity Management aspects, technical and organisational, are included in the more general framework of the Safety Management System. Currently, more and more gas companies implement such a system on the basis of standards like ISO 9000 and so on. In this way, the report shows how practices of Pipeline Integrity Management are continually developing in order to adapt to their environment, and to improve performance. Past experience and imminent developments show that Pipeline Integrity Management is a flexible and efficient approach to ...