International Nuclear Information System (INIS)

The use of workstations, controllers or embedded systems and their applications have become much more relevant than previously. PC-based systems, a cooker programmer, applications of, for example, Prolog machines, Unix and Ada papers, Robotics and Automation are typical examples of this. The three keynote addresses of this symposium have as their subjects the most spectacular microcomputer fields and are presented by leading experts. The papers presented cover most of the traditional interests of Euromicro. Special emphasis is given to contributions on the use of workstations and personal computers, on RISC and GaAs and on transputers.

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The symposium reviewed the use of electronics in mining today. Subjects covered include control systems; remote sensing; telemetry; data transmission; microprocessors and transportation systems. 15 papers have been abstracted separately.

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This book contains the abstracts of all the presentations made either in oral or poster form, at the VII International Symposium on Photosynthetic Prokaryotes.

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... The three meteorological rocket systems, in order of ... IC3 and IC4 divides the incoming clock pulses f ... at the junction of the temperature sensor and R ...

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The symposium had four areas in analytical methodology to study global environmental change: air; water, wastes and speciation, analytical methodology and environmental management. The symposium had 24 conferences and papers.

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... develops. An alternative approach is the use of non-absorbable antibiot- ics such as polymyxin, neomycin, and bacitracin. ...

International Nuclear Information System (INIS)

This publication is the collection of the paper presented at the title meeting. The 19 of the presented papers are indexed individually. (J.P.N.)

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... 65th AGARD Fluid Dynamics Symposium, Madrid, Spain, October ... of research programs on flow control ... separation, and delta wing flows formed the ...

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No abstract prepared.

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No abstract prepared

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An overview of the operations of Sandia`s Microelectronics Development Lab (MDL) is to develop radiation hardened IC, but techniques used for IC processing have been applied to a variety of related technologies such as micromechanics, smart sensors, and packaging.

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As the IC Information Sharing Executive (IC ISE), my main focus today concerns classified information--and, in particular, information that is derived from intelligence sources and methods, or information that is reflected in the analytic judgments and as...

Wastenet

Network Security Innovation Platform InterIm strategIc assessment ...Network Security Innovation Platform InterIm strategIc assessment June 2009 InterIm strategIc assessment June 2009 Network Security Innovation Platform ...these services continue to operate in a reliable and secure way. These electronic services underpin the economic well-being

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In this work an experimental study is carried out to determine the thermo-hydraulic performance of an intercooler (IC) with flat tubes provided with triangular plain internal fins and louvered external fins when it is used on a car equipped with a low pressure EGR. The main unknowns to be answered are the thermo-hydraulic characteristics of the IC working under humid conditions induced by EGR, the conditions under which the water content in the mixture of air and exhaust gases begins to condense and the conditions under which the condensed water will be retained inside the IC. The exhaust gases are here replaced by a mixture of dry air and water vapour which are mixed upstream of the IC. The IC is submitted at the following testing conditions: on the ambient air side, the air temperature i...

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No abstract prepared.

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... CVn) consisting of a dM3 star and a cool white dwarf that must have evolved through the common-envelope stage of binary star evolution (Else van ...

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indicate incipient flow separation. The peak stagnation line ...... culations of Transonic Fan Performance, AGARD Propul- sion and Energetics Symposium on ...

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Hamed, A. and A. Mohamed, "Assessment of Shock Induced Flow Separation and ...... AGARD Symposium on Combined Cycle Propulsion for Hypersonic Application, ...

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A liquid crystal display panel (LCD) has come into use as a display device for a stationary telephone set. This LCD driving IC requires high functionality and miniaturization. At Fuji Electric Co.,Ltd., in accordance with the demand, an LCD controller driver IC was developed which incorporates an icon display circuit and a voltage generating circuit for liquid crystal. The main features are as follows. In addition to 5 x 8 (dot), 16 digits, 2 line character display, the IC is equipped with independently controllable 32 kinds of icon displays. The power supply voltage operating range is 2.4-5.5V. Additional external parts are unnecessary because of a built-in CR oscillation circuit, power supply circuit for liquid crystal, and a boosting circuit. The IC is provided with a gold bump electrode structure mountable with COG (Chip On Glass) and TAB (Tape Automated Bonding). (NEDO)

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of the Intelligent Control System (ICS) for reusable rocket engines. .... the incoming measurements with corresponding estimates, a sensor failure can be ...

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Lectures were held on forest and wood management, the forest as an energy source and the emission problem of wood combustion, future emission limitating regulations for wood firing, influence of firing technique on air pollution abatement and constructive and operational air pollution abatement measures with manually and continuously fuelled furnaces.

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This book presents the papers given at a symposium on occupational safety in coal mines. Topics considered at the symposium included human factors, causes and prevention of personal injuries, remote sensing for ground control, respirable dust generation by continuous miners, accident analysis, hazard analysis of mining equipment, coal mine blasting accidents, coal mine respirable dust sampling, and noise in the mining industry.

International Nuclear Information System (INIS)

Records of the 8. ITER Council Meeting (IC-8), held on 26-27 July 1995, in San Diego, USA, and the 9. ITER Council Meeting (IC-9) held on 12-13 December 1995, in Garching, Germany, are presented, giving essential information on the evolution of the ITER Engineering Design Activities (EDA) and the ITER Interim Design Report Package and Relevant Documents. Figs, tabs.

International Nuclear Information System (INIS)

Obtained experimental data on integral cross sections (ICS) of inelastic scattering of 50.5 MeV #alpha# particles with the excitation of "6","7Li, "9Be, "1"2","1"3C, "1"4C, "1"4N, "2"0Ne, "2"4Mg, "2"8Si nucleus low-lying energy levels are discussed. Regularities, detected in the behaviour of ICS forward scattering for 20-90 deg angles and backscattering for 90-160 deg angles for the target-nucleus under investigation are considered. Effect of reaction open channel number on #alpha#-particle scattering ICS where n,p,d- and #alpha#-channels were considered as the main channels for all the target-nuclei, is discussed. Dependence of #alpha#-particle scattering ICS on the target-nucleus level excitation energy and dependences of reaction open channel number on the channel spin, calculated for 50.5 MeV #alpha# particles and different target nuclei are shown in the diagrams. It is noted that the observed ...

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...

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High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

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The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

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The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

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The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

British Library Electronic Table of Contents (United Kingdom)

To discuss and share knowledge around advances in the care of patients with thrombotic disorders, the Third International Symposium of Thrombosis and Anticoagulation was held in S?o Paulo, Brazil, from October 14?16, 2010. This scientific program was developed by clinicians for clinicians, and was promoted by four major clinical research institutes: the Brazilian Clinical Research Institute, the Duke Clinical Research Institute of the Duke University School of Medicine, the Canadian VIGOUR Centre, and the Uppsala Clinical Research Center. Comprising 3?days of academic presentations and open discussion, the symposium had as its primary goal to educate, motivate, and inspire internists, cardiologists, hematologists, and other physicians by convening national and international visionaries, th...

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Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga{sup +} ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes ...

International Nuclear Information System (INIS)

This paper discusses the possible detection of magnetic monopoles and monopole tachyons. Topics considered include insects, astrophysics, general relativity theory, plants, and biotechnology. The paper was presented at an international symposium on non-conventional energy technology.

Science.gov (United States)

tion and the Copenhagen symposium in many regards heralded the birth of modern marine bio-optics and the .... given to conducting a pigment intercomparison based on .... assignment of personnel and equipment, so the Hout Bay deployments were suspended. ...... submarine light field. Upwelling radiance is measured at ...

International Nuclear Information System (INIS)

The International Symposium on Nuclear Security took place within a context of international acknowledgement that the threat of nuclear terrorism required dedicated action by the international community, States, industry and others. The Symposium dealt with those issues involved in protecting nuclear and other radioactive material from criminals. It also took place against a backdrop of renewed interest in nuclear technology: increased use of nuclear power, and increased use of radioactive isotopes in medicine and in industry. These are welcome developments, since nuclear energy and technology can indeed contribute to the technological and economic welfare of many countries, without compromising public health or the environment. In this context, security measures should not impede State programmes for peaceful use of nuclear technology. The symposium dealt with (1) the threat of nuclear terrorism and of other ...

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This volume contains the proceedings of a symposium entitled In Vivo Imaging of Neurotransmitter Function in Brain, Heart, and Tumors'' held August 24--25, 1990 in Montreal Canada. The six individual papers contained herein are separately abstracted and indexed for the database.

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Risoe`s 40th anniversary was celebrated June 3, 1998 by a symposium held at Risoe. The interaction of research at Risoe with academia and industry was presented in both national and international perspective. Most of the presentations are in English, a few in Danish. (au)

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This symposium about electric operational and expansion planning presents several articles that approaches issues such as, monitoring the power system stability, electrical load modelling, reliability in power systems, optimization in power systems, integrated resources planning in power systems, reactive control through static compensators, power flow analysis, system modelling, etc

International Nuclear Information System (INIS)

The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.

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The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.

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The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE ...

UK PubMed Central (United Kingdom)

Inhaled corticosteroids (ICS) are often prescribed as first-line therapy for patients with asthma Despite their efficacy and improved safety profile compared with oral corticosteroids, the potential...Full Text Available

International Nuclear Information System (INIS)

The world's fleet of nuclear power plants is, on average, more than 20 years old. Even though the design life of a nuclear power plant is typically 30-40 years, it is quite feasible that many plants will be able to operate in excess of their design lives, provided that nuclear power plant engineers demonstrate by analysis, trending, equipment and system upgrades, increased vigilance, testing and ageing management that the plant will operate safely. In the operation of nuclear power plants, safety should be always the prime consideration. Plant operators and regulators must always ensure that plant safety is maintained, and where possible enhanced, during a plant's operating lifetime. Nuclear power plant life management (PLiM) has gained increased attention over the past decade, and effective ageing management of systems, structures and components (SSCs) is a key element in PLiM for the safe and reliable long term operation of nuclear power plants. A PLiM programme is an effective tool ...

International Nuclear Information System (INIS)

A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

International Nuclear Information System (INIS)

The SIEN 2009 symposium organized by Romanian Nuclear Energy Association, AREN, in co-operation with Romanian Atomic Forum, ROMATOM, was primarily targeting the expert community involved in developing new nuclear power projects and implementing the National Nuclear Program. The symposium was also open as a discussion and information forum for scientists, engineers, technicians and students interested in scientific and technologic topics of Nuclear Power. It was structured in the following 6 sections: - Nuclear new builds and developments; - Operation, inspection and maintenance; - Increasing nuclear safety features; - Fuel cycle and decommissioning; - Public perception and confidence strengthening; - Environmental management. The symposium began with three plenary lectures dealing with: - Sustainable Nuclear Energy European Technology Platform; - Nuclear new-build; - Current issues of nuclear equipment standardization in ...

Science.gov (United States)

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

UK PubMed Central (United Kingdom)

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

International Nuclear Information System (INIS)

In the 5th year of the Japan International Cooperation Agency (JICA) Technical Cooperation Project 'Seismic Risk Reduction for Buildings and Structures in Romania', the implementing agency - National Center for Seismic Risk Reduction (NCSRR) and JICA jointly organized the International Symposium on Seismic Risk Reduction (ISSRR-2007) held in Bucharest at the Romanian Academy Library in the period April 26-27, 2007. The present volume contains the Proceedings of the International Symposium on Seismic Risk Reduction, ISSRR-2007. The Proceedings are organized in three parts: (I) keynote lectures, (II) papers on the results of JICA Project in Romania and (III) contributions from authors. Eight keynote lectures by specialists from Japan, USA, France and Greece, and fourteen papers on the results of JICA Project are included. The contributions from authors are divided in five sections: (i) Seismicity, Seismic Hazard and Site Effects, (ii) Seismic ...

International Nuclear Information System (INIS)

Purpose: To evaluate the role of stereotactic radiosurgery (SRS) and whole-brain radiotherapy (WBRT) for the treatment of brain metastases in patients with renal cell cancer (RCC). Patients and methods: 88 patients were treated with either SRS (n = 51) or SRS + WBRT (n = 17) for one to three lesions, or with WBRT (n = 20) for more than three brain metastases. Overall survival (OS), intracerebral control (IC) and local control (LC) were retrospectively analyzed. Six potential prognostic factors were assessed: age, gender, number of brain metastases, extracerebral metastases, recursive partitioning analysis (RPA) class, and interval from tumor diagnosis to irradiation. Results: The median times for OS, IC, and LC from the time of diagnosis were 11, 9, and 10 months. The median OS times for SRS, SRS + WBRT, and WBRT were 12, 16, and 2 months. Addition of WBRT to the SRS improved IC (p = 0.032) but not OS (p = 0.703). On ...

International Nuclear Information System (INIS)

Using the slow electrons spectrometer one can get information on the surface structure, its element composition, chemical bonds, adsorption phenomena, electron state density and surface oscillation. We have developed the methods and created the apparatus that makes it possible to investigate the electron backscattering by solid surface. We have studied the electron scattering by the polycrystalline and monocrystalline. GaAs surface in the energy range of 0 to 9 eV. The FWHM of electron energy distribution function was 70 meV. (author).

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New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

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This volume presents the main address, the lectures and the discussions of the symposium. The papers presented to the symposium were the following: the Draft Convention on the Law of the Sea and problems of the international deep seabed regime; developments in science and technology, as a challenge to international law; modern fishery engineering and its impact on international law; the EEC agricultural market - a case study of European Law; problems of international law in connection with a new system of the world economy; the GATT and a new world economic system; the Third World and UNCTAD; international disaster relief and mutual assistance in case of accidents, especially with a view to Atomic Energy Law; organisation, scope and limits of international co-operation in the peaceful use of nuclear energy.

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We present two new techniques that enhance conventional focused ion beam (FIB) system capabilities for integrated circuit (IC) analysis: in situ electrical biasing and voltage contrast imaging. We have used in situ electrical biasing to enable a number of advanced failure analysis applications including (1) real time evaluation of device electrical behavior during milling and deposition, (2) verification of IC functional modifications without removal from the FIB system, and (3) ultraprecision control for cross sectioning of deep submicron structures, such as programmed amorphous silicon antifuses. We have also developed FIB system voltage contrast imaging that can be used for a variety of failure analysis applications. The use of passive voltage contrast imaging for defect localization and for navigation on planarized devices will be illustrated. In addition, we describe new, biased voltage contrast imaging techniques and provide examples of ...

British Library Electronic Table of Contents (United Kingdom)

The precedence effect (PE) is thought to be beneficial for proper localization and perception of sounds. The majority of recent physiological studies focus on the neural discharges correlated with PE in the inferior colliculus (IC). Pentobarbital anesthesia is widely used in physiological studies. However, little is known of the effect of pentobarbital on the discharge of neurons in PE. Neuronal responses in the IC from 23 male SD rats were recorded by standard extracellular recording techniques following presentation of 4ms white noise bursts, presented from either or both of two loud speakers, at different interstimulus delays (ISDs). The neural responses were recorded for off-line analysis before or after intraperitoneal administration of pentobarbital at a loading or maintenance dose. ...

Science.gov (United States)

Some aspects of molecular mechanisms common to radiation and chemical carcinogenesis are discussed, particularly the DNA damage done by these agents. Emphasis is placed on epidemiological considerations and on dose-response models used in risk assessment to extrapolate from experimental data obtained at high doses to the effects from long-term, low-level exposures. 3 references, 6 figures. (ACR)

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Papers are presented under the following topics: machine control and automation; rock drilling; cutting and fragmentation; rock characterization, remote sensing and interface detection; artificial intelligence and mine monitoring systems; computer applications; mechanical excavators; material handling; surface and underground mining; innovative mining systems; new developments in mechanical miners; ground hazard detection and control; ground support; and extraterrestrial mining.

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This conference brought together those persons in the nuclear industry who have a vital interest in the training and licensing of nuclear reactor and nuclear fuel processing plant operators, senior operators, and support personnel for the purpose of an exchange of ideas and information related to the various aspects of training, retraining, examination, and licensing. The document contains 64 papers; each paper was abstracted for the data.

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This book presents the papers given at a conference on offshore platforms. Topics considered in this book include risk assessment, crack propagation, fracture control, stress corrosion, the reliability of pile foundations, the thermal conductivity of offshore pipeline coating material, economic analysis, hydrodynamics, simulation, Arctic structure design, composite materials, buoys, deep water drilling, corrosion protection, pollution control equipment, and subsea exhaust gas compressors.

International Nuclear Information System (INIS)

This symposium was held February 22--24, 1995 in Las Vegas, Nevada. The purpose of this meeting was to provide a multidisciplinary forum for exchange of state-of-the-art screening methods for environmental monitoring and remedial action planning of hazardous materials. In the last few years important advances have been made in the management of hazardous materials. Individual papers have been processed separately for inclusion in the appropriate data bases.

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Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of this research is to ...

International Nuclear Information System (INIS)

A program was undertaken to radiation harden an existing power integrated circuit technology (BCDMOS) to total dose, gamma dot, SEU, and neutrons. Efforts have centered around hardening and optimizing our CMOS, DMOS, and NPN devices. Initial results indicate a substantial improvement in hardness over our existing commercial technology.

International Nuclear Information System (INIS)

Projectilelike fragments following the 80 MeV "1"6O+"2"7Al reaction have been detected using a Bragg-curve spectroscopy ionization chamber (BCS-IC). The atomic number is deduced from the Bragg-peak amplitude. Nitrogen isotopes are clearly resolved using either range or energy loss data. This is the first application of the BCS method for complete ion identification in a heavy-ion-induced reaction.

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A special purpose hardware machine, which simulates up to one half-million gates and 2m byte RAM ICS at a 5 millisecond clock speed is described. This is accomplished with a hardware logic (HAL) simulator. This performance is achieved with 32 distributed special parallel processors, which utilize block oriented simulation technique. The technique promises a good cost hardware logic simulator. 7 references.

International Nuclear Information System (INIS)

Using high resolution and high sensitivity IRAS data at 12 and 25 microns low mass stars were studied which have recently formed in the Ophiuchus, Corona Australis, and IC1396 dark clouds. The successful application of these techniques to the Rho Ophiuchi infrared cluster is briefly described. The status of research performed is also presented.

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The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native oxide--hydrocarbon layer during the Ni/GaAs, Pd/GaAs, and Pt/GaAs reactions is also investigated. Only the ...

Science.gov (United States)

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

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In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

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Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

International Nuclear Information System (INIS)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.

International Nuclear Information System (INIS)

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

International Nuclear Information System (INIS)

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

International Nuclear Information System (INIS)

The papers presented at the symposium had covered three general areas in which isotopes could have been beneficially used. these areas are: -Water use and water use efficiency studies. -Ground water investigations -Water problems in the arab countries. The individual papers had dealt with these subjects: -Hydrological research in the arab countries by use of radioisotopes. -The perspectives of use of radioisotopes in hydrological studies in Syria. -Water use efficiency and sub-soil water studies. -Sea water inclusion in a coast el aquifers in Lebanon. -Irrigation requirements of crops in Lebanon as determined by a Neutron probe with reference to other methods. -The use of the neutron moisture meter and other methods of the determination of the evapotranspiration of maize. -Ground water investigations, dating and nuclear methods applied to hydrology. -Ground water investigation in Wa di El-Nat run, U.A.R. -Velocity distribution along the pumped well using ...

Energy Technology Data Exchange (ETDEWEB)

The theme of the conference was recent developments in airborne remote sensing and their applications. The proceedings contain the papers presented at 14 general sessions and 13 interactive sessions covering airborne platforms, sensor systems, airborne/spaceborne synergy, atmospheric and oceanic measurements, land cover/land use, emergency response and reconnaissance, data handling, forestry, agriculture, water resources, geospatial reference, system calibration, environmental monitoring and planning, and information product advancements. Two papers are abstracted separately.

International Nuclear Information System (INIS)

Building on the concepts of MIRD methods described by Webber, Watson and others at this Symposium on the Dosimetry of Administered Radionuclides, we will now consider how to apply these principles to several experimentally based open-quote macroclose quotes and multicellular models. Specifically, methods to calculate absorbed dose using different types of particulate emission (alpha, beta) with a variety of antibody carriers (IgG, F(ab')_2, Fab) for radioimmunotherapy (RIT) will be reviewed. Additionally, a discussion of direct measurement methods at the multicellular level will reveal the problems of tumor absorbed dose heterogeneity when applied to animal and clinical studies.

Energy Technology Data Exchange (ETDEWEB)

This is the introductory paper for eight papers that follow in this issue of Natural Resources Journal that were presented at a symposium on the titled subject. The editor notes that two movements in recent decades have been identified with coastal regions - efforts to conserve natural resources and energy source development - and that profound social, economic, and political ramifications have attended these movements. He further notes that the tensions and demands created by the above two developments proved too much for state and local mechanisms, eventually culminating in the Coastal Zone Management Act of 1972. He then briefly evaluates the focus and success of CZMA and reviews the other papers. 58 references.

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The article is the second part of a review dealing with latest developments in the area of solar cell technologies and application. Physical principles, design and efficiency as well as advantages and disadvantages of GaAs- and CdS-solar cells are described. Power generation solar cell systems with voltage converters, combined solar cell/solar collector systems and thermoelectric solar systems are presented in the second part of the article.

Energy Technology Data Exchange (ETDEWEB)

As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type ...

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Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

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A procedure and correlations are presented for predicting Charpy-impact energy, tensile flow stress, fracture toughness J-R curve, and J{sub IC} of aged cast stainless steels from known material information. The ``saturation`` impact strength and fracture toughness of a specific cast stainless steel, i.e., the minimum value that would be achieved for the material after long-term service, is estimated from the chemical composition of the steel. Mechanical properties as a function of time and temperature of reactor service are estimated from impact energy and flow stress of the unaged material and the kinetics of embrittlement, which are also determined from chemical composition. The J{sub IC} values are determined from the estimated J-R curve and flow stress. Examples of estimating mechanical properties of cast stainless steel components during reactor service are presented. A common ``lower-bound`` J-R curve for cast stainless steels of unknown ...

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An ambitious development programme culminated in late 1989 with the most modern diesel train available today entering commercial service. At the root of its development lay an overall concept which aimed at meeting the present-day and future requirements of railway administrations. Higher passenger revenues, lower operating costs and reduced maintenance are the result. An IC trainset is 58.8 m long and consists of three cars: Two identical power cars and one intermediate car. Each three-car trainset has 144 seats, 16 of which are reserved for first class. Up to five three-car trainsets can be coupled rogether to form a 15-car trainset. Four air-cooled 8-cylinder diesel engines with a combined rating of 294 kW power each three-car trainset, i.e. there are two engines installed in each of the power cars. The train has a maximum speed of 180 km/h. (orig.).

International Nuclear Information System (INIS)

Photometric and kinematic observations of the peculiar S0 galaxy IC 4767, the X-galaxy, are presented. At various intensities the bulge of this galaxy looks like a normal spheroidal system with elliptical isophotes, a well-defined rectangle, and a peanut-shaped or X-shaped structure with components aligned at oblique angles to the major axis. The observations reveal a rapidly rotating inner disk of gas and dust which is nearly aligned with the major axis. The presence of gaseous emission alone suggests an accretion event. The stars in the outer regions of the X-component are rotating nearly as rapidly as the gas in the main disk, indicating that they are in relatively circular orbits. The five most prominent peanut-shaped bulges all have several nearby companions, evidence that the peanut deformity is due to interaction between galaxies. An analogy with the formation mechanism proposed for polar-ring galaxies suggests how an X-shaped component could develop from ...

Energy Technology Data Exchange (ETDEWEB)

The design of the KSTAR (Korea Superconducting Tokamak Advanced Research) tokamak (R{sub 0} = 1.8 m, a= 0.5 m, {kappa} = 2, {delta} = 1.8 B{sub T} = 3.5 T, I{sub p} 2 MA, {tau}{sub pulse} = 300 s) is being undertaken to do long-pulse. high {beta}, advanced tokamak operating-mode fusion physics experiments. The ion cyclotron (IC) system will deliver 6 MW of rf power to the plasma in the 25 - 60 MHz frequency range, using a single four-strap antenna mounted in a midplane port. It will be used for ion heating, fast-wave current drive (FWCD), and mode conversion current drive (MCCD). The phasing between current straps in the antenna will be adjustable quickly during operation to provide the capability of changing the current-drive efficiency. The IC system will be capable of 300 s operation with 12 MW (upgrade) of rf power to the plasma. (author)

CERN Document Server

We have obtained UBVRI images with the Kitt Peak and Cerro Tololo 4-m telescopes and Mosaic cameras of seven dwarfs in (or near) the Local Group, all of which have known evidence of recent star formation: IC10, NGC 6822, WLM, Sextans B, Sextans A, Pegasus,and Phoenix. We construct color-magnitude diagrams (CMDs) of these systems, as well as neighboring regions that can be used to evaluate the degree of foreground contamination by stars in the Milky Way. Inter-comparison of these CMDs with those of M31, M33, the LMC, and the SMC permits us to determine improved reddening values for a typical OB star found within these galaxies. All of the CMDs reveal a strong or modest number of blue supergiants. All but Pegasus and Phoenix also show the clear presence of red supergiants in the CMD, although IC10 appears to be deficient in these objects given its large WR population. The bright stars of intermediate color in the CMD are badly contaminated by ...

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This study was conducted to investigate the decomposition of three {gamma}-irradiated antibiotics (e.g., tetracycline, sulfamethazine, and lincomycin) and to compare the toxic effects on Daphnia magna, Vibrio fischeri, and Pseudokirchneriella subcapitata. The median cell growth inhibition concentrations (IC{sub 50}) of tetracycline, lincomycin, and sulfamethazine for P. subcapitata dramatically increased (e.g., toxicity decreased) after radiolysis. The results demonstrated that {gamma}-radiation treatment was efficient to decompose antibiotics and thereby their toxicity on P. subcaptitata remarkably decreased due to reduced parent compounds.

Science.gov (United States)

C C*R C" dC*9 4hC2 CX2VCTF CK/XCL` CCNA C?Q C.:FC C?v As1)Ax^IA} AyU$ =FA%WNA AfgJA Aw;ZAzg AyA!A A=!nA> CA!n/A* ? ...

International Nuclear Information System (INIS)

Cerebral blood flow (CBF) and cerebrovascular reserve capacity (CRC) were measured by stable xenon computerized tomography (Xe-CT) and acetazolamide test in 15 patients with cerebrovascular disease before and after extracranial-intracranial (EC-IC) bypass surgery for minor stroke, reversible ischemic neurological deficit or transient ischemic attack. All had angiographically shown occlusive lesions of the major arterial trunk. In the present series, global analysis showed that the bypass did not increase the resting rCBF, but did increase the rCRC. We divided the patients into four groups according to the preoperative resting rCBF and rCRC. All 3 patients with normal resting rCBF and reduced rCRC showed postoperative improvement of rCRC. Of 6 patients with reduced CBF and reduced CRC, three had postoperative increase in resting CBF and four had increased CRC. One of two patients with reduced CBF and normal CRC showed only an increase in CRC. We propose that reduced ...

International Nuclear Information System (INIS)

This paper reports, to complement current knowledge on brain development, late regional brain maturation assessed with quantitative MR imaging. Axial and coronal head spin-echo (SE) images were obtained in 60 healthy individuals aged 5--56 years, with a double-echo, flow compensated imaging sequence obtained with a 1.5-T Magnetom spectroscopy and imaging system. T2-weighted images were calculated from the intensity differences in SE images at echo times (TEs) of 15 and 90 msec (TR = 2.5 second). The mean T2 values were determined at 16 sites in each cerebral hemisphere. T2 values of the six frontal subcortical white matter (FSCWM) sites and of the internal capsule (IC) were evaluated. Mean T2 values in the IC decreased until age 10 years, whereas this decrease continued in the FSCWM past age 15 years before reaching a plateau. Differential age-dependent patterns of mean T2 values emerged between the six FSCWM sites. The spread of T2 values ...

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The existence of problems with wild pigs (Sus scrofa) is nothing new to the Western Hemisphere. Damage by these introduced animals was reported as far back as 1505 by the early Spanish colonies in the Caribbean, where wild pigs were killing the colonists cattle. Droves of these animals also ravaged cultivated crops of maize and sugarcane on islands in the West Indies during this same time period. These wild pigs reportedly were very aggressive and often attacked Spanish soldiers hunting rebellious Indians or escaped slaves on these islands, especially when these animals were cornered. The documentation of such impacts by introduced populations of this species in the United States has subsequently increased in recent years, and continued up through the present (Towne and Wentworth. 1950, Wood and Barrett 1979, Mayer and Brisbin 1991, Dickson et al. 2001). In spite of a fairly constant history in this country since the early 1900s, wild pigs have had a dramatic recent increase in both ...

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This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal ...

Energy Technology Data Exchange (ETDEWEB)

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on Earth. This article ...

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In addition they describe how this concept ...

International Nuclear Information System (INIS)

Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 #mu#m was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence spectra from ...

International Nuclear Information System (INIS)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K_#alpha# X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K_#alpha# X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the conditions necessary for ...

Science.gov (United States)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al{sub {ital x}}Ga{sub 1{minus}{ital x}}InP{sub 2}; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. {copyright} {ital 1996 The American Physical Society.}

Energy Technology Data Exchange (ETDEWEB)

The temperature dependence of the spontaneous magnetization of epitaxial iron films with a thickness ranging from d=20 to 200nm has been measured. The films are grown on GaAs (100) substrates which are covered by a 150nm thick silver (100) buffer layer. For three-dimensional BCC iron it was observed already in 1929 that saturation of the spontaneous magnetization for T->0 is perfectly described by a T{sup 2} power law. On the other hand, for thin two-dimensional (2D) iron films a T{sup 3/2} law has been established in many recent experimental investigations. In our iron films grown on diamagnetic silver, this dimensionality change occurs at a thickness between d=100 and 200nm. Comparison of the here-observed T{sup 3/2} coefficients with those on iron films grown on paramagnetic tungsten (110) shows that the 2D interactions are {approx}20 times larger in the films on tungsten. Recent results on Fe films which are grown directly on GaAs ...

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A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

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A review is given of the state-of-the-art of single and polycrystalline solar cells, which includes a short theoretical review, laboratory achievements, and production methods. The Si single and polycrystalline cell and the amorphous Si cell are described, including material preparation, crystal and sheet growth, and cell and panel production. Promising second generation thin film solar cells including GaAs, CdS(CuInSe/sub 2/), and CdTe are briefly described. Economical aspects are discussed.

Energy Technology Data Exchange (ETDEWEB)

We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and after post-growth thermal annealing. In ...

International Nuclear Information System (INIS)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit current densities are due to short diffusion lengths, we have demonstrated a ...

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Buses, operating within a Florence (Italy) municipal transportation system, and equipped with Otto cycle engines, were selected for retrofitting taking into account the suitability of each vehicle`s specific routing and service requirements. Cost benefit analyses indicated that it wouldn`t be economically feasible to retrofit buses equipped with diesel engines. A computerized refuelling system was set up at the fleet`s central service station which was hooked up to the natural gas utility`s supply line. This paper tables the cost benefit analysis data comparing gasoline and methane operation and reflecting the cost savings which are expected to be accrued through this methanization program over a span of 14 years.

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This report presents research presented at the poster session of the Symposium covering a wide spectrum of current biotechnological research activities. Research focused mostly on ethanol production and methane generation from biomass material via microbial processing, as well as on enhanced hydrogen yield from algae. Several of the posters dealt with the pretreatment of cellulosic materials, and enzyme production/characterization, while a good number of papers displayed research efforts on bioremediation, photosynthesis, production of various useful chemicals from biomass by bioprocessing, and on other miscellaneous subjects. One of the papers treated a very interesting topic of cellulose-cellulase complexes. Many of the poster papers are included in this volume, and a synopsis of all the poster/papers presented is the subject of this article.

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ABB High Voltage Cables AB started the MPS (More Power Submarine cables) project in 1993 with a view to exploring new technology opportunities. The goal is to design and type test a submarine HVDC cable for a capacity of 1200 MW at 600 kV. On the day before ABB announced its success in winning the contract for the world`s largest ever submarine HVDC link project for the gigantic Bakun project in Malaysia, ABB Power Systems described progress to date at a symposium in Karlskrona. The proceedings included a test demonstration on an extruded cable which eventually broke down at a stress of over 935 kV -not in the insulation itself but in the end terminations. The electric field was in excess of 200 kV/mm which is higher than ever before reported. (UK)

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Applications, techniques, instrumentation, and interpretation of flow visualization are discussed. Methods of using flow visualization for the examination of combustion in furnaces, heat transfer with heat exchangers, and in fluid engines are explored, along with flow visualization in food processing, steel-casting, and process engineering. Further attention is given to pipe and channel flow, flow separation in laminar flow and around oscillating airfoils, wakes and vortices, supersonic flow and shock waves, and stratified flow and oceanography. The visualization of boundary layers is considered for various conditions, and applications for multiphase flow, rheology, and medical problems are detailed. Oil film, dry-surface coating, chemical, fluorescent, and minituft methods are presented, as well as the use of tracers, optical techniques, strobe lights, lasers, computerized data acquisition, and hot-wire anemometry.

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Theoretical and experimental data which have defined and/or extended the effectiveness of remote sensing operations are explored, with consideration given to both scientific and commercial activities. The remote sensing of soil moisture, the sea surface, and oil slicks is discussed, as are programs using satellites for studying geodynamics and geodesy, currents and waves, and coastal zones. NASA, Canadian, and Japanese radar and microwave passive and active systems are described, together with algorithms and techniques for image processing and classification. The SAR-580 project is outlined, and attention is devoted to satellite applications in investigations of the structure of the atmosphere, agriculture and land use, and geology. Design and performance features of various optical scanner, radar, and multispectral data processing systems and procedures are detailed.

British Library Electronic Table of Contents (United Kingdom)

Eight selected sulfonamide drugs were investigated as inhibitors of heat shock protein 90 (Hsp90). The investigation included simulated docking experiments to fit the selected compounds within the binding pocket of Hsp90. The selected molecules were found to readily fit within the ATP-binding pocket of Hsp90 in low-energy poses. The sulfonamides torsemide, sulfathiazole, and sulfadiazine were found to inhibit the ATPase activity of Hsp90 with IC50 values of 1.0, 2.6, and 1.5 mM, respectively. Our results suggest that these well-established sulfonamides can be good leads for subsequent optimization into potent Hsp90 inhibitors.

Science.gov (United States)

The paper outlines the design, principles of operation, and calibration of a five-IC network intended to give a rapid, precise, and automatic determination of the flatband voltage of MOS capacitors. The basic principle of measurement is to compare the analog output voltage of a capacitance meter - which is directly proportional to the capacitance being measured - with a preset or dialed-in voltage proportional to the calculated flatband capacitance by means of a comparator circuit. The bias to the MOS capacitor supplied through the capacitance meter is provided by a ramp voltage going from a negative toward a positive voltage level and vice versa. The network employs two monostable multivibrators for reading and recording the flatband voltage and for resetting the initial conditions and restarting the ramp. The flatband voltage can be held and read on a digital voltmeter.

International Nuclear Information System (INIS)

We report on the improvement of Critical Dimension (CD) linearity on a photomask by applying the concept of process proximity correction to a laser lithographic process used for fabrication of photomasks. Rule-based Laser Process proximity Correction (LPC) was performed using an automated optical proximity correction tool and we obtained dramatic improvement of CD linearity on a photomask. A study on model-based LPC was executed using a two-Gaussian kernel function and we extracted model parameters for the laser lithographic process by fitting the model-predicted CD linearity data with measured ones. Model-predicted bias values of isolated space (I/S), Arrayed Contact (A/C) and Isolated Contact (I/C) were in good agreement with those obtained by the nonlinear curve-fitting method used for the rule-based LPC.

British Library Electronic Table of Contents (United Kingdom)

Premnalatifolin A (1), a unique icetexane diterpene dimer was isolated from the stem-bark of Indian medicinal plant, Premna latifolia. Its structure and relative stereochemistry were elucidated on the basis of detailed spectroscopic analysis, including HRESIMS and 2D NMR (COSY, HSQC, HMBC, and NOESY) spectra. The compound has dimeric carbon skeleton composed of two icetexane skeletal diterpenes linked via ether bond. Further, premnalatifolin A (1) was also evaluated for its cytotoxicity against cancer cell lines (HT-29, A-431, MCF-7, Hep-G2, PC-3, A-549, B-16 F10, and ACHN), which displayed potent activity against HT-29 and MCF-7 cell lines with the IC50 values of 12.15 and 1.11mg/mL, respectively.

Energy Technology Data Exchange (ETDEWEB)

Approximately 95% of the world`s integrated chips are packaged using a hot, high pressure transfer molding process. The stress created by the flow of silica powder loaded epoxy can displace the fine bonding wires and can even distort the metalization patterns under the protective chip passivation layer. In this study the authors developed a technique to measure the mechanical stress over the surface of an integrated circuit during the molding process. A CMOS test chip with 25 diffused resistor stress sensors was applied to a commercial lead frame. Both compression and shear stresses were measured at all 25 locations on the surface of the chip every 50 milliseconds during molding. These measurements have a fine time and stress resolution which should allow comparison with computer simulation of the molding process, thus allowing optimization of both the manufacturing process and mold geometry.

British Library Electronic Table of Contents (United Kingdom)

Examining the relationship between biodiversity and functional stability (resistance and resilience) of activated sludge bacterial communities following disturbance is an important first step towards developing strategies for the design of robust biological wastewater treatment systems. This study investigates the relationship between functional resistance and biodiversity of dominant bacterial taxa by subjecting activated sludge samples, with different levels of biodiversity, to toxic shock loading with cupric sulfate (Cu[II]), 3,5-dichlorophenol (3,5-DCP), or 4-nitrophenol (4-NP). Respirometric batch experiments were performed to determine the functional resistance of activated sludge bacterial community to the three toxicants. Functional resistance was estimated as the 30?min IC50 or th...

British Library Electronic Table of Contents (United Kingdom)

Ethnobotanical and chemotaxonomical studies for antiparasitic activity of Colombian Annonaceae were carried out. In vitro antiprotozoal activity of 36 extracts obtained from six different species was determined against promastigotes of three Leishmania species, epimastigotes of Trypanosoma cruzi and both chloroquine sensitive (F32) and resistant (W2) Plasmodium falciparum. Cytotoxic activity was evaluated in U-937 cells. Active extracts were selected according their selectivity index (SI). Extracts from Annona muricata, Rollinia exsucca, Rollinia pittieri and Xylopia aromatica were active against Leishmania spp. and Trypanosoma cruzi showing IC50 values lower than 25mg/ml. Hexane extract from Rollinia pittieri leaves was the most selective against Trypanosoma cruzi and Leishmania spp. (IS=...

International Nuclear Information System (INIS)

The study reports the identification of different organic acids that are formed during the pyrohydrolysis of mixed carbide of uranium and plutonium using ion chromatography (IC). The identification of organic acids present in the pyrohydrolysis distillate is required to carry out interference free analysis of Cl and F. The study describes three stage isocratic separations with NaOH eluents having concentrations 2 mM, 10 mM and 50 mM respectively in order to separate and identify both aliphatic and aromatic acids. The present investigation identified formic, acetic, propionic, butyric, tartaric and oxalic acids in the distillate, however, aromatic acids could not be identified. (author)

Energy Technology Data Exchange (ETDEWEB)

This proceedings volume is organized into seven sections that reflect the materials systems and issues of electrochemical materials R and D in batteries, fuel cells, and capacitors. The first three parts are largely devoted to lithium ion rechargeable battery materials since that electrochemical system has received much of the attention from the scientific community. Part 1 discusses cathodes for lithium ion rechargeable batteries as well as various other battery systems. Part 2 deals with electrolytes and cell stability, and Part 3 discusses anode developments, focusing on carbon and metal oxides. Part 4 focuses on another rechargeable system that has received substantial interest, nickel/metal hydride battery materials. The next two parts discuss fuel cells--Part 5 deals with Proton Exchange Membrane (PEM) fuel cells, and Part 6 discusses oxide materials for solid oxide fuel cells. The former has the benefit of operating around room temperature, whereas the latter has the benefit of ...

Science.gov (United States)

The precedence effect (PE) is thought to be beneficial for proper localization and perception of sounds. The majority of recent physiological studies focus on the neural discharges correlated with PE in the inferior colliculus (IC). Pentobarbital anesthesia is widely used in physiological studies. However, little is known of the effect of pentobarbital on the discharge of neurons in PE. Neuronal responses in the IC from 23 male SD rats were recorded by standard extracellular recording techniques following presentation of 4 ms white noise bursts, presented from either or both of two loud speakers, at different interstimulus delays (ISDs). The neural responses were recorded for off-line analysis before or after intraperitoneal administration of pentobarbital at a loading or maintenance dose. Data were assessed by one-way repeated measures analysis of variance and pairwise comparisons. When the ipsilateral stimuli were leading, pentobarbital at a ...

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We report measurements of the temperature dependence of the threshold current of GaAs, 1.3-..mu..m InGaAsP, and 1.5-..mu..m InGaAsP double heterostructure lasers using short electrical pulses. T/sub 0/approx.200 K is observed for all the lasers. These high T/sub 0/ values show that the carrier density at threshold does not increase rapidly with increasing temperature in any of the lasers studied and thus the observed low cw T/sub 0/ of InGaAsP lasers is primarily due to a decrease of the carrier lifetime at threshold with increasing temperature.

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Efforts concentrated on updating of the Rockwell reference concept, definition of new system options, studies of special emphasis topics, further definition of the transportation system, and further program definition. The Rockwell reference satellite concept has a gallium arsenide (GaAs) solar cell array having flat concentrators with an effective concentration ratio of 1.83at end of life. Alternatives to this concept includes solid state power amplifiers or magnetrons for dc/RF conversion and multibandgap solar cells for solar to dc energy conversion. Two solid state concepts were studied. It was determined that the magnetron approach was the lowest mass and cost system.

International Nuclear Information System (INIS)

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

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This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

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Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

International Nuclear Information System (INIS)

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

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In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

Science.gov (United States)

The present conference on U.S. space transportation systems development discusses opportunities for aerospace students in prospective military, civil, industrial, and scientific programs, current strategic conceptualization and program planning for future U.S. space transportation, the DOD space transportation plan, NASA space transportation plans, medium launch vehicle and commercial space launch services, the capabilities and availability of foreign launch vehicles, and the role of commercial space launch systems. Also discussed are available upper stage systems, future space transportation needs for space science and applications, the trajectory analysis of a low lift/drag-aeroassisted orbit transfer vehicle, possible replacements for the Space Shuttle, LEO to GEO with combined electric/beamed-microwave power from earth, the National Aerospace Plane, laser propulsion to earth orbit, and a performance analysis for a laser-powered SSTO vehicle.

Science.gov (United States)

I review the past and present of wound ballistics research in China and look toward the future of this subject. The main points area as follows: (1) Before the 1970s, China did not conduct any experimental study on wound ballistics. (2) After the 1970s, experts in ordnance and medicine closely cooperated to conduct a series of experiments or tests on wound ballistics, such as wounding effects and the mechanism of various high-speed projectiles, the treatment of the protection from firearm wounds, high quality of ammunition design, lethality criterion, blast injuries, etc. Between 1981 and 1993, four national symposia on wound ballistics were held in China. In 1988, China sponsored the Sixth International Symposium on wound Ballistics. China has made great contributions to this subject. (3) As for the future of Chinese research on wound ballistics, I suggest strengthening the following areas: the relationship with weapons traumatology; the basic science research on ...

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The Plasma Science Committee (PLSC) of the National Research Council (NRC) is charged with monitoring the health of the field of plasma science in the United States and identifies and examines both broad and specific issues affecting the field. Regular meetings, teleconferences, briefings from agencies and the scientific community, the formation of study panels to prepare reports, and special symposia are among the mechanisms used by the PLSC to meet its charge. During July 1992, the PLSC sponsored a workshop on nonneutral plasmas in traps. Although no written report on the workshop results, was prepared for public distribution, a summary of highlights was provided to the OPST Subpanel on Nonneutral Plasmas. The PLSC also continued its follow-up briefings and discussions on the results of the results of the report Plasma Processing of materials. Scientific and Technological Opportunities. As a result of these activities, the Committee is now working with the NRC Committee on Atomic, ...

Science.gov (United States)

The papers contained in this volume provide an overview of recent theoretical and experimental research related to the fracture toughness and fatigue crack growth characteristics of titanium alloys. Topics discussed include room temperature fatigue crack propagation in beta-titanium alloys, fatigue crack growth rate acceleration in alpha+beta Ti alloys, influence of transformed beta microstructures on fatigue crack growth rates in Ti-6Al-4V, and the role of inclusion and pore content on the fracture toughness of powder processed blended elemental Ti-10V-2Fe-3Al. Papers are also presented on fatigue crack growth measurements in an alpha-beta titanium alloy, the effects of thermal processing variation on the properties of Ti-6Al-4V, and the effect of microstructure on ductility and fracture toughness of alpha+beta titanium alloys.

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A collaboration initiated in 1989 between Judy Lachvayder and Chris Cullis in response to an application for a Christa McCauliffe Fellowship has grown into a substantial program. A one week course in biotechnology, using the Cold Spring Harbor Vector van, was run in 1990. A similar one week summer course was run by Cullis for high school freshmen and sophomores. Both programs (teachers and students) have continued with support from the Edison Biotechnology Center (EBTC), U.S. Biochemical, the Howard Hughes Medical Institute and CWRU. A core of teachers from these courses were brought together by the EBTC and the Cleveland Regional Area of Biologists (CRABS) was formed. This group holds regular meetings and develops new classroom exercises. A group of master teachers from the participants have also held their own workshops at local and national meetings. A Science and Society Symposium was held in February 1994 and an equipment loan program for teachers has been ...

Energy Technology Data Exchange (ETDEWEB)

This proceedings volume comprises 17 papers on the following subjects: Methane hydrates, compounds of gas and water; Compressed air stroage gas turbine power plants / Scheduled application for load levelling between varying wind power production and power demand; Modern pumped storage power stations in the GW range - the PSW Goldisthal example; Lead batteries - new developments and future applications; Alkaline battery systems for hybrid electric road vehicles; Lighium systems and their applications; Zinc/air cells; Hydrogen storage - metal hydride storage, compressed gas storage, LNG storage; Carbon nanofibres for hydrogen storage; Double-layer condensers - technology, cost, perslpectives; Supercondensers in motor vehicles; Superconducting magnetic energy stores; Flywheel storage - status report; Decentralized energy storage in the European integrated supply grid - the EU project DISPOWER; Intercontinental integration of power supply - perspectives of full-scale power supply on the ...

Science.gov (United States)

An interest in electronic materials has led me to investigate new synthetic approaches to III-V' type semiconducting (13-15, current IUPAC designation for B and N groups in the Periodic Table) and magnetic (3-15) compounds. It is now possible to prepare binary (GaAs and GdP) and ternary mixed-metal (Al[sub x]Ga[sub 1-x]As) and mixed-pnictide (GaP[sub x]As[sub 1-x]) compounds in seconds from rapid, low-temperature-initiated metathesis reactions between a metal (III) trihalide and a trisodium pnictide, exemplified by MX[sub 3] + Na[sub 3]Pn [yields] MPn + 3 NaX, where M is Al, Ga, In, (Al,Ga), or a lanthanide; X is F, Cl, or I; and Pn is P, As, Sb, or (P,As). The precursors are mixed together in a dry box and ignited by light grinding with a mortar and pestle, or by brief, local heating from a hot filament. These reactions are very exothermic (calculated [Delta]H[sub rxn] (GaAs) = 138 kcal/mol) and typically reach temperatures in excess ...

International Nuclear Information System (INIS)

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier ...

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GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias ...

International Nuclear Information System (INIS)

The software package VIBA-lab1, which incorporates PIXE and RBS energy spectra simulation has now been extended to include the simulation of elemental maps from 3D structures. VIBA-lab1 allows the user to define a wide variety of experimental parameters, e.g. energy and species of incident ions, excitation and detection geometry, etc. When the relevant experimental parameters as well as target composition are defined, the program can then simulate the corresponding PIXE and RBS spectra. VIBA-LAB2 has been written with applications in nuclear microscopy in mind. A set of drag-and-drop tools has been incorporated to allow the user to define a three-dimensional sample object of mixed elemental composition. PIXE energy spectra simulations are then carried out on pixel-by-pixel basis and the corresponding intensity distributions or elemental maps can be computed. Several simulated intensity distributions for some 3D objects are demonstrated, and simulations obtained from a simple ...

CERN Document Server

(abridged) We present a study of stellar population of LAEs at z=4.86 in GOODS-N and its flanking field. With the publicly available IRAC data in GOODS-N and further IRAC observations in the flanking fields, we select five LAEs which are not contaminated by neighboring objects in IRAC images and construct their observed SEDs with I_c, z', IRAC 3.6micron, and 4.5micron band photometry. The SEDs cover the rest-frame UV to optical wavelengths. We derive stellar masses, ages, color excesses, and star formation rates of five LAEs using SED fitting method. Assuming the constant star formation history, we find that the stellar masses range from 10^8 to $10^{10} Msun with the median value of 2.5x10^9 Msun. The derived ages range from very young ages (7.4 Myr) to 437 Myr with a median age of 25 Myr. The color excess E(B-V) are between 0.1-0.4 mag. Star formation rates are 55-209 Msun/yr. A comparison of the stellar populations is made between three LAEs and 88 LBGs selected ...

International Nuclear Information System (INIS)

A complete heavy ion identification system in heavy ion reaction studies consists, in general, of: 1) a position sensitive avalanche counter, and 2) ionization chamber to obtain total energy as well as a heavy ion identifier signal (such as the E#DELTA#E signal from a E-#DELTA#E type detector or the height of the Bragg peak that scales as Z of the heavy ion in a Bragg curve ionization chamber). In addition, a time-of-flight information may be needed to resolve the masses of the ions. With this motivation in mind, a composite detector system consisting of a Bragg curve spectroscopy ionization chamber (BCS-IC) and a one dimensional position sensitive parallel grid avalanche counter (XPS-PGAC) has been developed and used successfully at the BARC-TIFR pelletron accelerator facility. The design and performance of this gas detector system are reported. (author). 4 refs., 2 figs.

International Nuclear Information System (INIS)

A heavy ion gas detector system consisting of a Bragg-curve spectroscopy ionization chamber for particle identification and a multiwire proportional chamber as position sensitive fast trigger device is described. The Bragg IC has been tested with several beams up to Z=36 to investigate some aspects of the BCS method. Results are reported on energy resolution and linearity, Z resolving power and mass sensitivity. The energy resolution is well below 1%. The Bragg-peak amplitude is fairly independent of the energy in a wide energy range and single elements are identified up to Z=38 with a resolving power Z/#DELTA#Zproportional50-80. Isotope identification by range measurement is limited by the straggling in the ionization process and the mass resolving power is M/#DELTA#Mproportional20-26 for S and Si isotopes. The MWPC allows subnanosecond time resolution and position identification along the in-plane coordinate within +-0.5 mm. (orig.).

International Nuclear Information System (INIS)

Column chromatography of the petroleum ether and chloroformic extracts of Maytenus Forsskaoliana afforded four compounds: friedilin1, B-amyrin 2, B-sitosterol 3 and betulin 4. The structure of these compounds were established on bases of spectral (IR,MS,H and C-NMR)as well as physical data. Antimicrobial activity for extracts indicated weak potency (200ug/ml) while betulin4 showed a pronounced activity (MIC and MBC 20ug/ml).The cytotoxic activity of beutalin4 significantly indicated promising activity (IC50 40ug/ml) on both HeLa and Hep-2 cells. The pharmacological activity of diferent extracts showed sedative effect, slowing respiration, dose -dependent decrease in the arterial blood pressure by 40.1mm Hg (at adose 200mg /kg),decrease in the heart rate 67.3% (at a dose 50mg /kg)and decrease in the body temperature by 4.2C after 2 hrs (at a dose 200mg /kg). (author)

Energy Technology Data Exchange (ETDEWEB)

Analyses of the date obtained from the instrumented impact test and of its correlation with static and dynamic J integral values and various tensile properties are made in this study. It is shown that a dynamic bending yield load recorded in the instrumented Charpy V test can be easily converted to a dynamic tensile yield stress using Server's equation. It is also possible to estimate a true fracture strain, COD value, and SZW easily if the load point displacement is recorded. Temperature dependency of Charpy V energy and J integral values is rather well simulated by a curve fitting method. However, a half value transition temperture obtained in that method has no physical meaning. Dynamic J sub(ID) is larger than a static J sub(IC) in the ductile fracture range in this study. This rise is proportional to the yield stress ratio sigmasub(yd)/sigmasub(y)(--1.2-1.3). It is found, therefore, that the following relation exists in the both cases; J ...

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R and D of the robot control system was conducted in the following items: 1) integrated open control system, 2) remote control robot manipulation language, 3) human factor robot use built-in LAN system, 4) built-in actuator driver. In 1), there were some problems to be pointed out around the system, but the effectiveness was confirmed as system architecture of each verification item. In 2), development/design were made of RCML(R-Cube Manipulation Language) as a remote robot manipulation language, telecommunication protocol, and the experimental system, and the international standardization was targeted. In 3), the R and D was conducted of the realtime telecommunication protocol which clears the standards for the distributed control required for construction of human factor robot and the advanced realtime micro-controller, ULSI, which is the one that the protocol was made IC. In 4), an intelligent connector for built-in actuator was developed which enables saving of ...

Energy Technology Data Exchange (ETDEWEB)

Tantalum and tantalum-based thin films have gained precedence as the diffusion barrier for copper interconnects used in the latest generation of integrated circuits (ICs). The paper presents insight and observations on the covariance of texture and grain size of wrought tantalum sputtering targets and their influence on sputtering performance. Previous studies involving deposition trials of tantalum targets of varying metallurgical character had demonstrated that both grain size and textural homogeneity is critical for assuring reliable sputtering performance of tantalum. Subsequently, a model had been proposed to prescribe how localized texture bands and orientation clusters in tantalum are effectively resistant to sputter erosion. In this paper, results of atomic force microscopy (AFM) and orientation imaging microscopy (OIM{sup TM}) analyses on the eroded surface of a tantalum sputtering target are presented. Initial findings support the model's ...

Science.gov (United States)

Based on studies on the genetic and molecular basis of Shigella flexneri invasive properties, we have constructed and evaluated a double mutant of S. flexneri serotype 5 for utilization as a live attenuated oral vaccine against shigellosis. The first mutation, icsA, blocks intracellular spread of bacteria as well as cell-to-cell infection. It affects the capacity of the invasive pathogen to form large abscesses in epithelia. The second mutation, iuc, eliminates production of the siderophore aerobactin thus impairing growth of the bacterium within tissues. This double mutant, SC5700 appeared safe when administered intragastrically to macaque monkeys as three doses (5 x 10(10) c.f.u. each) at weekly intervals. Protection against a challenge by the wild type isolate (M90T) was observed 4 weeks after the last vaccine inoculation. Duration of carriage was considerably reduced as compared to the control group in which all animals had developed severe dysentery. ...

International Nuclear Information System (INIS)

Model construction of the laboratory scale superconducting fault current limiter circuit (SFCL) has been performed. The SFCL is fault current limiter and used as electric network security. It mainly consists of a copper coil, a superconducting ring and an iron core that are concentrically arranged. The SFCL circuit is essentially a transformer where the secondary windings are being replaced by the ring of YBa_2Cu_3O_7_-_x superconductor (HTS). The ring has critical transition temperature Tc = 92 K and critical current Ic = 3.61 A. Characterization of the SFCL circuit is simulated by ANSYS version 5.4 software. The SFCL circuit consists of load and transformer impedances. The results show that the inductions of magnet field flux in the iron core of primer windings and ring disappear to one other before fault state. It means that impedance of the transformer is zero. After the condition a superconductivity behavior of the ring is disappear so that the impedance of ...

International Nuclear Information System (INIS)

We investigate the evolution of Type Ib/c supernova (SN Ib/c) progenitors in close binary systems, using new evolutionary models that include the effects of rotation, with initial masses of 12-25 M_s_u_n for the primary components, and of single helium stars with initial masses of 2.8-20 M_s_u_n. We find that, despite the impact of tidal interaction on the rotation of primary stars, the amount of angular momentum retained in the core at the presupernova stage in different binary model sequences converges to a value similar to those found in previous single star models. This amount is large enough to produce millisecond pulsars, but too small to produce magnetars or long gamma-ray bursts. We employ the most up-to-date estimate for the Wolf-Rayet mass-loss rate, and its implications for SN Ib/c progenitors are discussed in detail. In terms of stellar structure, SN Ib/c progenitors in binary systems at solar metallicity are predicted to have a wide range of final masses up to about 7 ...

International Nuclear Information System (INIS)

This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ...

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)b2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed ...

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Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In/sub 1-//sub y/(Al/sub x/Ga/sub 1-//sub x/)/sub y/P-In/sub 1-//sub y/ (Al/sub x/Ga/sub 1-//sub x/)/sub y/P quantum well heterostructures grown lattice matched (yapprox. =0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (J/sub th/approx.10/sup 4/ A/cm/sup 2/, 625 nm) of diodes fabricated from the same crystal is described.

International Nuclear Information System (INIS)

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, including the ...

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). ...

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with room-temperature hole concentrations varying from ...

Science.gov (United States)

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor linearity of the ...

Energy Technology Data Exchange (ETDEWEB)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

British Library Electronic Table of Contents (United Kingdom)

Abstract Visible blue cathodoluminescence (CL), photoluminescence (PL), x-ray excited optical luminescence (XEOL) and electroluminescence (EL) via Zf free excitonic emission have been obtained from CuBr thin films deposited on glass, Cr coated glass, GaAs and Si substrates. In addition to the Zf emission several peaks corresponding to Cu+ emissions via 3d94s - d10 transitions were observed on the AC EL spectrum at 2.10, 2.7, 3.03, 3.07 and 3.80 eV. X-ray diffraction (XRD) measurements confirmed that the vacuum evaporated CuBr thin films grow preferentially with a (111) orientation irrespective of the substrate. While the AC voltage source was found to have no detrimental effects on CuBr thin films, cathodic deposition of Cu metal via electrolytic decomposition was observed under steady sta...

International Nuclear Information System (INIS)

The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range of 1#centre dot#10"1"7 cm"-"3 - 10"1"8 cm"-"3. (author)

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

Energy Technology Data Exchange (ETDEWEB)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

International Nuclear Information System (INIS)

The design of the ITER primary first wall incorporates a multi-layered structure consisting of a layer of beryllium bonded to a layer of copper alloy with embedded stainless steel tubes which in turn is bonded to a stainless steel structure. In this configuration, the stainless steel provides structural support, the copper alloy improved resistance to high heat loads, and the beryllium layer a low Z metal interface with plasma. Fabrication, testing and control of this multi-layered structure, and indeed the entire blanket shield module, calls for advanced methods. Several associations in the four home teams and their industrial partners have been involved in various fabrication and joining tasks now grouped under L4 blanket project. In this paper, an overview of the work done so far for joining stainless steel to stainless steel, stainless steel to copper alloy, copper alloy to copper alloy, and copper alloy to beryllium is presented. Specialised papers dealing with most of the topics ...

Science.gov (United States)

The jet in cross flow (JICF) is a basic flowfield which is relevant to a wide variety of applications which are described to provide context for JICF investigations. Material consistent with the scope of topics presented at the 72nd AGARD Fluid Dynamics Panel Meeting and Symposium on Computational and Experimental Assessment of Jets in Cross Flow on 19-22 April 1993 in Winchester, U.K. is summarized. The JICF research was divided into three time periods: (1) early research - up to 1970, (2) research during the 1970's, and (3) research since 1980. The following areas of experimental activity are discussed; the definition of an effective correlation parameter; the jet flowfield including the jet trajectories, cross-section shape, and jet induced pressures; the effects of jet deflection angle, nozzle shape, pressure ratio, velocity decay, and temperature; and the effect of confined flowfield, ground effects, multiple jets, and adjacent surface geometry. In addition, ...

Science.gov (United States)

Anthraquinones are widely present in plant kingdom, and clinically used as laxatives. Environmental contaminants, dioxins, develop various adverse effects through transformation of a cytosolic aryl hydrocarbon receptor (AhR). We investigated the effects of 18 anthraquinones and 7 of their structurally related compounds on transformation of the AhR estimated by its DNA-binding activity in the cell-free system. 1,4-Dihydroxyanthraquinone (quinizarin), 1,5-dihydroxyanthraquinone (anthrarufin), 1,8-dihydroxyanthraquinone (danthron), and 5-hydroxy-1,4-naphthoquinone (juglone) strongly suppressed DNA-binding activity of the AhR induced by 0.1 nM 2,3,7,8-tetrachlorodibenzo-p-dioxin (TCDD), with their IC(50) values around 1 muM. On the other hand, anthraquinone, 2,6-dihydroxyanthraquinone (anthraflavic acid), and 2-hydroxy-1,4-naphthalendione (lawsone) showed moderate effects. Quantitative structure-activity relationships analysis demonstrated that hydroxyl groups at C1 or ...

Science.gov (United States)

Calcium-activated chloride channels (CaCCs) are widely expressed in mammalian tissues, including intestinal epithelia, where they facilitate fluid secretion. Potent, selective CaCC inhibitors have not been available. We established a high-throughput screen for identification of inhibitors of a human intestinal CaCC based on inhibition of ATP/carbachol-stimulated iodide influx in HT-29 cells after lentiviral infection with the yellow fluorescent halide-sensing protein YFP-H148Q/I152L. Screening of 50,000 diverse, drug-like compounds yielded six classes of putative CaCC inhibitors, two of which, 3-acyl-2-aminothiophenes and 5-aryl-2-aminothiazoles, inhibited by >95% iodide influx in HT-29 cells in response to multiple calcium-elevating agonists, including thapsigargin, without inhibition of calcium elevation, calcium-calmodulin kinase II activation, or cystic fibrosis transmembrane conductance regulator chloride channels. These compounds also inhibited calcium-dependent chloride ...

International Nuclear Information System (INIS)

We have investigated the growth behaviors of high temperature compatible ZrO_2 insulation coatings on Ag and AgMg sheathed Bi_2Sr_2Ca_1Cu_2O_x superconducting tapes depending on number of dipping and thermal conditions. The coatings were fabricated on long-length superconducting tape substrates using a solution derived from Zr tetrabutoxide, solvent and chelating agent for high magnetic field magnets. The layer-on-layer growth behaviors were characterized by environmental scanning electron microscope (ESEM), energy dispersive spectroscopy (EDS), X-ray maps and X-ray diffraction (XRD). This research showed that the ZrO_2 coatings were regularly grown on Ag-based tape substrates and coating thickness increased with increasing number of dipping. It was found that ceramic oxides formed at temperature range 450 and 550 deg. C. The final coating thickness changed between 6 and 8 #mu#m after annealing process. Resistance of insulation measured from surface and edge regions of the coatings ...

Science.gov (United States)

The Soldier Information Requirements Technology Demonstration (SIREQ TD) project is an experimentation program to identify technologies that significantly enhance the performance of our future soldiers. One of the study series involved a 2 x 2 factorial comparison of the benefits of digital maps over paper maps, and the use of radios vs. no radios. Thirty-two Canadian regular force infantry soldiers performed force-on-force tactical assault missions in wooded terrain, with each soldier participating in all four test conditions. The radios were configured to operate in 4 subnets: 1 channel for each of the 2 Assault Groups (4 soldiers on a channel); a Section Commander/2IC channel; and an all-users channel. Note that in the no-radio conditions soldiers still operated the press-to-talk switch to allow recording of communications, but the speaker volume was set to zero. All communications were date/time stamped, identified as to the user and channel, and the audio was ...

International Nuclear Information System (INIS)

To investigate the growth inhibitory effects, and the underlying mechanism of human colon cancer cell (HT-29) death, induced by a new synthetic bile derivative (HS-1200). Human colon cancer cells (HT-29), in exponential growth phase, were treated with various concentrations of a new synthetic bile acid derivative (HS-1200). The growth inhibitory effects on HT-19 cells were examined using a trypan blue exclusion assay. The extent of apoptosis was determined using agarose gel electrophoresis, TUNEL assays and Hoechst staining. The apoptotic cell death was also confirmed by Western blotting of PARP, caspase-3 and DNA fragmentation factor (DFF) analysis. To investigate the involvement of mitochondria, we employed immunofluorescent staining of cytochrome c and mitochondrial membrane potential analyses. The dose required for the half maximal inhibition (IC_5_0) of the HT-29 cell growth was 100 #approx# 150 #mu# M of HS-1200. Several changes, associated with the apoptosis ...

Science.gov (United States)

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser projection displays, holographic memories, and plastic fiber communication.

Science.gov (United States)

Data are presented demonstrating short-wavelength (approx. <6400 A) continuous (cw) laser operation of p-n diode In/sub 0.5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0.5/P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30 /sup 0/C to room temperature (RTapprox. =300 K, lambdaapprox. =6395 A) the threshold current density changes from 2.3 x 10/sup 3/ A/cm/sup 2/ (-30 /sup 0/C) to 3.7 x 10/sup 3/ A/cm/sup 2/ (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7 x 10/sup 3/ W/cm/sup 2/, J/sub eq/approx.2.9 x 10/sup 3/ A/cm/sup 2/) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

Science.gov (United States)

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al{sub 0.5}Ga{sub 0.5}As and In{sub 0.53}Ga{sub 0.47}As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, {ital E}({Gamma}{sub 1{ital c}}) of AlP, {ital E}({ital L}{sub 1{ital c}}) of AlAs, and {ital E}({ital L}{sub 1{ital c}}) of AlSb are discussed and attributed to various experimental uncertainties. Several other quasiparticle-excitation-related properties are ...

Science.gov (United States)

The photopumped phonon-assisted laser operation (612 nm, 77 K) of a high-gapIn/sub 1/minus//ital y//(Al/sub /ital x//Ga/sub 1/minus//ital x//)/sub /ital y//P quantum wellheterostructure (QWH) lattice matched to GaAs (/ital y/approx.0.5) is identified usinga single rectangular sample that is shifted in its heat sinking from (a) low/ital Q/ when clamped onto Au (bare edges) to (b) high /ital Q/ when furthercompressed into Au with all four edges reflecting. For the low-/ital Q/ QWH samplephotopumped in a spot (partially photopumped), phonon-assisted laser operation(abrupt threshold, narrow spectrum) is observed on closely spaced end-to-endlaser modes ..delta../ital E/=/h bar/..omega../sub LO/approx.45--47 meV below the lowestconfined-particle transitions. For the /ital same/ sample shifted tohigh /ital Q/, edge-to-edge laser operation across the sample on confined-particletransitions is ''turned on'' also, thus providing an ...

Energy Technology Data Exchange (ETDEWEB)

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization ...

Science.gov (United States)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub 0.5/P ...

Energy Technology Data Exchange (ETDEWEB)

We have observed resonant changes in the current-voltage characteristics of miniband semiconductor superlattices when the Bloch frequency is resonant with a terahertz field and its harmonics: the inverse Bloch oscillator effect. The resonant feature consists of a peak in the current which grows with increasing laser intensity accompanied by a decrease of the current at the low bias side. The peak position moves linearly with the laser frequency. When the intensity is increased further the first peak starts to decrease and a second peak at about twice the voltage of the first peak is observed due to a two photon resonance. At the highest intensities we observe up to a four photon resonance. A superlattice is expected to show negative differential conductance due to the strong nonparabolicity of the miniband. In this situation the carriers should undergo Bloch oscillations with a frequency {omega}{sub B} = eEd/h. Transient Bloch oscillations of photo excited carriers have been observed ...

Energy Technology Data Exchange (ETDEWEB)

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, ...

International Nuclear Information System (INIS)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for visible-wavelength electro-optic ...

Energy Technology Data Exchange (ETDEWEB)

Using conventional deep level transient spectroscopy (DLTS), we have characterized the defects introduced in OMVPE n-GaAs at 15 K by 5.4 MeV alpha particle irradiation from an americium 241 radio-nuclide. After this low temperature irradiation two new defects not yet reported for alpha irradiated GaAs before, E[alpha]7 and E[alpha]9, were detected 0.07 eV and 0.19 eV below the conduction band, respectively. The introduction rates of E[alpha]7 and E[alpha]9 are calculated to be 41 cm[sup -1] and 187 cm[sup -1] respectively. It was observed that both defects obeyed first order annealing kinetics, with E[alpha]9 being removed at 225 K and E[alpha]7 at 245 K corresponding to the well known stage I annealing region. The annealing rate of E[alpha]7 corresponds to an activation energy of 0.86 eV, with a pre-exponential factor of 1.0 x 10[sup 15]s[sup -1]; and the removal of E[alpha]9 has an activation energy of 0.88 eV and a pre-exponential factor of 1.7 x 10[sup 17]s[sup ...

Science.gov (United States)

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a GaInP active layer was found to depend on growth conditions and dopant behaviour during the growth, and it varied ...

Energy Technology Data Exchange (ETDEWEB)

Ohio State University (OSU) is uniquely poised to establish such a center, with interdisciplinary emphasis on modeling, simulation, design and control of hybrid-electric drives for a number of reasons, some of which are: (1) The OSU Center for Automotive Research (CAR) already provides an infrastructure for interdisciplinary automotive research and graduate education; the facilities available at OSU-CAR in the area of vehicle and powertrain research are among the best in the country. CAR facilities include 31,000 sq. feet of space, multiple chassis and engine dynamometers, an anechoic chamber, and a high bay area. (2) OSU has in excess of 10 graduate level courses related to automotive systems. A graduate level sequence has already been initiated with GM. In addition, an Automotive Systems Engineering (ASE) program cosponsored by the mechanical and electrical engineering programs, had been formulated earlier at OSU, independent of the GATE program proposal. The main objective of the ...

International Nuclear Information System (INIS)

As a continuation of its efforts to provide methodologies and tools to Member States to carry out comparative assessment and analyse priority environmental issues related to the development of the electric power sector, the IAEA has completed a new version of the Wien Automatic System Planning (WASP) Package WASP-IV for carrying out power generation expansion planning taking into consideration fuel availability and environmental constraints. This manual constitutes a part of this work and aims to provide users with a guide to use effectively the new version of the model WASP-IV. WASP was originally developed in 1972 by the Tennessee Valley Authority and the Oak Ridge National Laboratory in the USA to meet the IAEA needs to analyse the economic competitiveness of nuclear power in comparison to other generation expansion alternatives for supplying the future electricity requirements of a country or region. Previous versions of the model were used by Member States in many national and ...