AimTo estimate the prevalence and causes of blindness and visual impairment in the population aged 40 years and over in Muyuka, a rural district in the South West Province...Full Text Available
... We also toured a Trident submarine at Kings Bay, Ga. "During the weekend at the Joint Interagency Task Force Headquarters in Key West, Fla., we ...
Aim: This paper aims to describe self-rated health (SRH) status among older adults in a rural community of Vietnam, and examine individual and household-level factors associated with good health rating among the study populations. Methods: The study was carried out in the Bavi district, a rural community located 60 km west of Hanoi, the capital, within the Epidemiological Field Laboratory of Bavi (FilaBavi) in Vietnam in 2006. All people aged 50 years and over who lived within the district were surveyed. Face-to-face household interviews were conducted by trained surveyors using standard World Health Organization/INDEPTH network questionnaire-summary version. A logistic multilevel modeling approach was applied to analyze the association between SRH and both individual and household-level f...
Purpose ? The Islamic social capital is characterised by a desire for moral values in production and networking which promotes opportunities for innovative interactions between sets of agents thus forwarding the Islamic ethics. The aim of this paper is to explore the factors that drive alliance formation between labour and capital in both financial and technological forms. Design/methodology/approach ? An in-depth study was made of developmental interventions within the Muslim community life of a village in the Birbhum district of West Bengal province in India. Findings ? Evidence shows that the strengthening of informal co-operative networks through the inputs of technology, financial, and human capital from across different sectors constitutes an essential element in forwarding sustainab...
Full text: Recent geoarchaeological research in the Erzurum district, north-eastern Anatolia, has revealed an abundance of obsidian at numerous neolithic and Bronze Age sites. Geochemical characterisation using neutron activation analysis indicates that the obsidian was obtained from several sources that are chemically distinct from the major sources already known from Central Anatolia an the Lake Van area. Multiple sources are represented in the samples collected from at least two of the sites, namely the sites of Sos and Pulur. The primary source of some of the obsidian utilised at the site of Sos has been located in the volcanic sequence outcropping tot he north-west of Pasinler. Field survey however has shown that the alluvial deposits along the main rivers and some of their tributaries were the main sources of the obsidian utilised at the sites near Erzurum. Trade or exchange of obsidian with sites outside the Erzurum area seems to have ...
Rb-Sr phlogopite age determinations, interpreted as emplacement ages, are reported for 15 southern African kimberlites. Jagersfontein and Rietfontein (85 and 95 Ma) have ages typical of the majority of well-known Cretaceous kimberlites, whereas somewhat older ages of about 118 to 125 Ma have been obtained for localities in the Postmasburg, Barkly West and Boshoff districts. Previous zircon ages of 90Ma for Finsch and Roberts Victor are believed to be incorrect. Two other localities in the Barkly West area have significantly younger emplacement ages of about 114 Ma relative to most Barkly West occurrences. Two off-craton kimberlites, Uintjiesberg and Mzongwana, are 100 and 150 Ma in age respectively. Swartruggens and Elandskloof have ages of 150-160 and 165 Ma respectively. A Barkly West occurrence, Klipfontein, also has an apparent age of 160 Ma, but this result cannot be considered ...
The coalbed methane (CBM) geology, resource and production potential in the Weibei Coalfield, southeastern Ordos Basin are studied based on geological surveys and laboratory measurements. The results showed that coal rank varies both laterally and vertically and changes from volatile bituminous coals in the margin to anthracites towards the basin (1.6-2.5% R{sub o}). Coals are composed of 60-85% vitrinite, 15-40% inertinite and a trace amount of minerals. Methane isothermal adsorption measurements of 20 coal samples revealed that the maximum adsorption capacity (on a dry and ash-free basis) of coals, which are affected by coal rank, coal maceral, coal lithotype and especially to the moisture content, varies from 13.91 to 29.54 m{sup 3}/t. Estimated gas contents range from 0 to 15 m{sup 3}/t. These data yield an estimated in-place CBM resource of 2.5 x 10{sup 11} m{sup 3} for the Weibei Coalfield. In combination with the geological information, the data indicated that the tectonic ...
The Archean core of the Laramide Wind River uplift records evidence of at least three major granitoid-forming episodes. The oldest, the Dry Creek gneiss (DCG), was emplaced by 2.8 Ga and occupies the northeastern part of the range. Mafic, pelitic and ultramafic inclusions occur in the DCG. Elsewhere in the Wind River Mountains there is evidence for crustal components as old as 3.8 Ga. The Bridger batholith (BB), intruded at 2.67 Ga, is found in the west-central Wind River Mountains. The Wind River batholith (WRB) refers to the youngest Late Archean granodiorites and granites which are found throughout the range and includes granitoids previously name the Louis Lake, Bears Ears, Popo Agie, and Middle Mountain intrusions. Although granitoids of the Wind River batholith have been dated at 2.63 and 2.55 Ga, they are considered together here because there is a complete gradation in rock ...
Italian district small and medium enterprises (SMEs) developed aggressive strategies to extend their sales networks and supply chains abroad. Literature on districts offered alternative explanations about the impacts of internationalization on local manufacturing systems. The authors consider the evolution of Italian districts in the framework of global value chain approach, focusing on the role of leading firms. Based on a survey of 650 Italian SMEs and financial indicators, the paper describes the rise of a new district firm model, the open network, which becomes a key node of global value chains. The paper also analyses the relationships among internationalization, innovation strategies and performance of SMEs.
The advantages of district heating as an environmental-friendly and energy-saving technique are reviewed. The role of district heating as part of the Dutch national plan to reduce the emission of acidification and greenhouse gases by respectively 50 and 25 percent is clarified. 12 Tabs. (A.S.).
IAQ Tools for Schools Program Leaders in Improving Indoor Air Quality in Schools Baldwin Union Free School District, Baldwin, NY El Paso Independent School District, El Paso,...
...Development of an Agroforestry Sequestration Project in Khammam District of India | International Energy Studies International Energy Studies News | Researchers | Publications ...Technologies Division Industrial Innovations Industrial Energy Analysis Copyright &1692006 Disclaimer Development of an Agroforestry Sequestration Project in Khammam District of India Authors:P. Sudha; V.... Vasistha 2006-10-10 0 Development of an Agroforestry Sequestration Project in Khammam District of India P. Sudha, V. Ramprasad, M.D.V. Nagendra,...
We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga"+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).
This Fact Sheet presents the mission of the West Valley Demonstration Project and information on the 1994 pollution prevention and recycling accomplishments.
Sinonasal malignancy is a cause of otorhinolaryngologic morbidity and mortality in West Africa. However, there is a dearth of information in the literature on its clinicopathologic presentation in West...Full Text Available
Summary brochure of GeoPowering the West (GPW) activities, and areas of technology transfer and market transformation. It also provides current contact information for key DOE and national laboratory staff representing the GPW program.
The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good ...
GaP and AlGaP were grown by atmospheric pressure OMVPE on GaP substrates using tertiarybutylphosphine as the phosphorus source. A specular surface of GaP was obtained on a (100) just-oriented surface at 700deg C. Hazy but uniform thickness AlGaP was obtained. The growth efficiency for GaP was 1.2x10{sup 3}{mu}m/mol and that for AlGaP was 2.1x10{sup 3}{mu}m/mol.4.2 K photoluminescence showed near-edge emission from both GaP and AlGaP. (orig.).
In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).
The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native ...
By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.
Approximately 1.2 million kg of uranium oxide (yellow cake) has been produced from the area surrounding Gunnison, Colorado. Over 99 percent of this has come form the Cochetopa and Marshall Pass districts. Uranium in both districts and many of the other occurrences is associated closely with fault and shear zones which cut brittle host formations (sandstones and dolomites) of Paleozonic and Mesozoic age. Minor uranium occurrences are in pegmatites and shear zones in Precambrian rocks, Cambrian vein material, and sandstones of Tertiary age. In the paper presented, the uranium occurences are described by districts. In addition, possibilities for additional discoveries are discussed. (JMT)
Multitemporal TM images are used to collect information about the extension and variation of water influx subsidence in coal district in order to provide a reference for the harnessing and utilization of water influx subsidence. The multitemporal TM images are used as a blended data group for the analysis of the principal components to reflect the expanding water influx subsidence in the past years. Because of the differences in the environment and imaging condition, 'unitary' order is used to enhance the 'coherence' and 'comparability' of the original TM images. 5 refs., 4 figs., 2 tabs.
Timber Compartment Boundary This data set identifies the 90 timber compartment boundaries in a 200 square-mile study ... Kawishiwi Ranger Districts, Superior National ...
Monthly rainfall data from June to October for 39 years were used to compute Standardized Precipitation Index (SPI) values based on two parameter gamma distribution for a low rainfall and a high rainfall districts of Andhra Pradesh state, India. Comparison of SPI with actual rainfall and rainfall deviation from the mean indicated that SPI values under-estimate the intensity of dryness/wetness when the rainfall is very low/very high, respectively. As a result, the SPI in the worst drought years of 2002 and 2006 in the low rainfall district indicated only moderate dryness instead of extreme dryness. SPI values of the high rainfall district showed slightly better stretching in both positive and negative directions, compared to that of the low rainfall district. Further, the SPI values of long...
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Late Archean (ca. 2.5Ga) porphyritic granites to comprise about 25% of the crystalline rocks of the Wind River uplift. In most localities, they are typical biotite-hornblende granites but on the western margin of the range there is evidence that portions of at least one pluton were emplaced as charnockite. In the Burnt Lake area homogenous charnockite crops out over an area of at least 3km while in the Boulder Creek Canyon, 8km to the S.E. charnockite occurs locally as blotches in porphyritic biotite granite. One sample from Boulder Creek, 15 cm in the longest dimension, shows a complete transition from charnockite to biotite granite. Textures indicate that the transition occurred as subsolidus hydration, with hornblende and biotite replacing augite and orthopyroxene, respectively. Pryoxene geothermometry from this sample yields maximum temperatures of around 900/sup 0/C, with a cooling trend to 600/sup 0/. Fluid inclusion of both CO/sub 2/ (p = .85 to .95) and ...
Precambrian gneisses in the San Bernardino Mountains were first identified and described in the vicinity of Baldwin Lake by Guillou (1953). Five lithologic units mappable at 1:24,000 scale are recognized: biotite [+-] muscovite quartzofeldspathic gneiss, amphibolite, pyroxene metagabbro, augen gneiss, and biotite [+-] muscovite granitic gneiss. Baldwin gneiss with this L Baldwin Lake, the gneissic fabric is rotated toward the northwest, subparallel to the Doble fault. Along this fault, Baldwin gneiss is structurally underlain by overturned Paleozoic quartzite and marble (Zabriskie Quartzite and Carrara Formation). Regional relations suggest that the Doble fault is a northeast-directed basement thrust fault of pre-Late Cretaceous age, and may be contemporaneous with late Paleozoic deformation and metamorphism of Paleozoic rocks further west in the range. Field relations suggest that Baldwin gneiss in its type area largely retains Proterozoic fabrics and mineral ...
Ophiolitic rocks occur as wall rocks of the 2.7 Ga Louis Lake batholith near Atlantic City, Wyoming. All of the Archean rocks are strongly deformed and metamorphosed to a greenschist and amphibolite facies, but relict structures and textures are commonly preserved. These include the following, from west to east: (1) metadiabase with rare coarse-grained metagabbro; (2) ultramafic rocks and metagabbro; (3) amphibolite, locally pillowed, overlain(.) by pelitic schist, banded iron formation, and quartzite; and (4) pillow lavas, massive sills or flows, and minor metasedimentary rocks. Slice 1 locally contains parallel dike margins and rare metagabbro screens; these features suggest that it may represent a sheeted dike complex. Slice 2 locally contains ultramafic rocks having relict cumulus textures and igneous layering, corresponding to the cumulus portion of an ophiolite. The pillow lavas of slice 4 and possibly slice 3 are interpreted as ...
AbstractMultiple HIV-1 subtypes and circulating recombinant forms (CRFs) are known to cocirculate in Africa. In West Africa, the high prevalence of CRF02_AG, and cocirculation of subtype...Full Text Available
... east Nigeria) and has also been recorded from south west Cameroon. Only two records; that from Angola the locality ... east Nigeria) and has also been recorded from south-west Cameroon. It is inferred tha...
Forty children with the fetal alcohol syndrome were identified in the west of Scotland. All were growth retarded and had abnormal facial features, and all those who were tested were found to have neurological...Full Text Available
Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. ...
This paper describes the performance of AlGaN/GaN HEMTs with 2.4 #mu#m source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 #mu#m source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)
The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.
HEW is operating one of the biggest district heating networks of the Federal Republic of Germany. The paper discusses a number of projects which in recent years have been engaged in extensive air pollution abatement measures to make district heating an environmentally compatible energy source. Emphasis is placed on the hot gas cleanup system of block 2 of the harbor power plant. The system is the first of its kind to have realized an SCR system connected with the desulfurization system for industrial denitrification purposes.
BackgroundIntermittent preventive treatment of malaria during pregnancy (IPTp) is a key intervention in the national strategy for malaria control in Tanzania. SP, the current drug...Full Text Available
Embracing the notion of going green, an affluent school district in Pennsylvania spent $83 million as part of the high school's renovation and expansion project. The three-level addition is now equipped with self-dimming lights, energy-efficient windows, a rooftop solar water heater, and a geothermal cooling and heating system. As a bonus for going green, the school district received a $250,000 grant from the Pennsylvania Department of Environmental Protection. The district used that money to create an information center in the lobby of the building where a touch-screen computer provides students, staff, and visitors with data related to the operation of the school's energy-efficient water and electrical systems. The system will graphically depict utility use over the course of a year. The monitoring system and touch-screen computer can turn this school into a living lab, with science, math, and economics teachers using the ...
Argus Energy's Kiah Creek Operation has received the 2007 Wetlands West Virginia Award presented by the West Virginian Coal Association. The operation was originally a 1267 acre underground mine in the Coalburg seam. Underground mining commenced in 2000 until the end of 2003 with more than two million tons of coal being produced. The creation of the wetlands was achieved during the operations. 8 photos.
We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1-xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift.
We carried out theoretical analyses based on ab initio calculations that incorporate free energy of the vapor phase in order to determine the initial growth process of cubic GaN on GaN (001)-(4x1). The results suggest that a N-adsorbed structure appears at the initial growth stage and then Ga adsorbs on the N-adsorbed GaN (001)-(4x1) surface. Considering this process, we performed Monte Carlo simulations. The results suggest that the maximum point of Ga coverage after supplying a Formula Not Shown monolayer of atoms shifted toward a Ga-rich condition from V/III=1.0.
Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 A within 3000 A wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier-carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in ...
We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)b2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed ...
An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for ...
Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs ...
The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.
The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.
We discuss the initial development of a concentrator device based on the GaInP/GaAs monolithic tandem cell structure. The very high one-sun efficiency of this device, coupled with its characteristic low operating current, make this a promising candidate for use under high concentration. Test results for a prototype device are presented. This device achieves an efficiency of 29.5% at a concentration of 102 suns.
By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.
Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2p sub 3 sub / sub 2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga sub 2 O sub 3 powder were used. A separate study aiming the identification of the GaAs ...
Magneto-striction and magnetic form factors in 5f itinerant antiferromagnets UNiGa{sub 5} and UPtGa{sub 5} are studied by means of neutron scattering. Remarkable magneto-striction was observed around T{sub N}, indicating large spin-orbit coupling in the itinerant system. The orbital magnetic moment is found to be strongly suppressed due to the hybridization of uranium 5f with Ga-4p electron.
An indoor radioactive survey is being conducted in an Italian district. Preliminary results identified a zone with significant radioactive levels, in which a new specific survey has been planned. In this paper attention is dedicated mainly to radon measurement technique and results.
This is a retrospective study of the development of the social worker role within the multi-disciplinary team setting of the Accident and Emergency (A&E) Department at Burnley General Hospital...Full Text Available
Objectives: To determine the community based prevalence of rheumatic heart disease (RHD) in the rural population of the district of Rahim Yaar Khan in Pakistan.Subjects...Full Text Available
BackgroundThere is a lack of studies considering social disparity in oral health emanating from adolescents in low-income countries. This study aimed to assess socio-demographic...Full Text Available
BackgroundNorthern Uganda unlike other rural regions has registered high HIV prevalence rates comparable to those of urbanized Kampala and the central region. This could be due to...Full Text Available
Traditional plant use in Nepal has been documented for millennia. The importance of plants as medicine has not diminished in any way in recent times, and traditional medicines are still the most important...Full Text Available
BackgroundRegistered data can provide valuable information regarding blindness. The purpose of this study was to evaluate the main causes and 3-year incidence of registered blindness...Full Text Available
Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI{sub 3} or BBr{sub 3} discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates ({gt}6000thinsp{Angstrom}thinspmin{sup {minus}1}) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI{sub 3} or BBr{sub 3} content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO{sub 2} and SiN{sub x} of {ge}8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and ...
Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI_3 or BBr_3 discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates (>6000 Angstrom min"-"1) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI_3 or BBr_3 content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO_2 and SiN_x of #>=#8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and AlInP. copyright 1998 American Vacuum Society.
The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range ...
Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a ...
Radiological hazard in uranium mining and milling operations are primarily due to exposure to external beta and gamma radiation as well as to airborne radionuclides which consist of radon and its short-lived daughter products. In May 1981 a radiological survey programme was performed in order to make a general assessment of the radiation hazards associated with the uranium mines and the Uranium Pilot Plant operated by the M.T.A. Institute in the Koprubasi district of the Manisa province. In this paper a preliminary radiological risk evaluation attempt is presented based on the radiation and radioactivity measurements performed in this district in May 1981.
The Rosebel gold district is hosted in a Paleoproterozoic greenstone belt of the Guiana Shield and has many characteristics that enable classification of the ores as an orogenic gold deposit. Host rocks have undergone several phases of deformation. However, gold deposition occurred late in the structural history of the belt, and is considered part of a late regional metallogenic event with respect to the geotectonic evolution of the Guiana Shield. Economic gold mineralization is hosted in felsic to mafic volcanic rocks and two sedimentary successions that are differentiated into turbiditic and arenitic depositional packages. The detailed lithostratigraphic characterization and the geochemistry enable the correlation of the local rock types with the Paramaka, the Armina, and the Rosebel for...
The justification, strategies, and technology options for implementing advanced district heating and cooling systems in the United States are presented. The need for such systems is discussed in terms of global warming, ozone depletion, and the need for a sustainable energy policy. Strategies for implementation are presented in the context of the Public Utilities Regulatory Policies Act and proposed new institutional arrangements. Technology opportunities are highlighted in the areas of advanced block-scale cogeneration, CFC-free chiller technologies, and renewable sources of heating and cooling that are particularly applicable to district systems.
1995-060A USA 115, also known as MILSTAR 2, is an American military spacecraft that was ... Its companion, MILSTAR 1, remains parked at 120 deg, west; ...
The North-West Borneo Trough is bordered along its south-east margin by a melange wedge that has been the subject of disagreement with insufficient discussion. Offshore Palawan it has been interpreted as an accretionary prism that has been preserved in place when subduction ceased in the Middle Miocene. It is unconformably overlain by undeformed Upper Miocene to Holocene draping strata. Farther south-west along the Trough, the seismically identical melange wedge has been named a Major Thrust Sheet System, which was assumed to have been thrust as a nappe north-westwards over the autochthonous Dangerous Grounds terrane of attenuated continental crust of the South China Sea passive margin. The accretionary prism model is the simplest, resulting in interpretation of the North-West Borneo Troug...
Washington West Virginia Wisconsin Wyoming Cancer --- Choose a Cancer Site --- All Cancer Sites Bladder Brain & ONS Breast (Female) Breast (Female in situ) Cervix Childhood...
After West Point and following a tour with the 82nd Airborne Division, McArthur entered the U.S. Army Aviation School in 1975 and was designated an Army ...
Team 6 Regimental Combat Team 8 Retired Activities Office Safety Division School of Infantry - East School of Infantry - West Second Low Altitude Air Defense Battalion Security...
HYPSOGRAPHY FOR THE FOLLOWING QUADS ALEXANDRIA, FALLS CHURCH, WASHINGTON WEST, MOUNT VERNON, ROCKVILLE, SENECA AND VIENNA. COVERAGE CONTAINS ATTRIBUTES DEFINING OWNERSHIP....
Room-temperature continuous-wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 /sup 0/C for a device with an 8-..mu..m-wide and a 250-..mu..m-long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T/sub 0/ was 138 K under cw operation. The wafer with the MQW structure composed of 100-A-thick GaInP wells and 40-A-thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.
The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.
The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.
This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.
Useful bipolar transistor action over the temperature range from -195 to 550 /sup 0/C has been demonstrated for heterojunction bipolar transistors in the GaP/AlGaP chemical system. This represents the highest temperature at which useful bipolar solid-state transistor action has ever been demonstrated in any material. Improvements in the materials technology and in the understanding of device characteristics at high temperatures were essential to the successful fabrication of these devices. These results demonstrate that the GaP/AlGaP heterojunction system is an excellent technology for active electronic components operated at high temperatures.
Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.
Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.
The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.
The band offsets and subband levels in a double quantum well layer for a 660 nm-Ga_0_._4In_0_._6P/(Al_0_._5Ga_0_._5)_0_._5In_0_._5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical calculation of the Schroedinger equation for the layer structure by varying the conduction band offset and compared with the measured photoreflectance spectra. The conduction band offset ratio is determined to be 0.5+0.03. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
The recently measured experimental data of Argonne National Laboratory for high-spin states in neutron-rich $^{71,73,75,77}$Ga isotopes have been interpreted in the framework of large-scale shell model. Calculations have been performed in $f_{5/2}pg_{9/2}$ model space with two recent effective shell model interactions, JUN45 and jj44b. We also predict high-spin states for $^{79,81}$Ga, where very little is known experimentally. The calculated results show that existence of band structure built on top of the 3/2$^-$, 5/2$^-$ and 9/2$^+$ levels in $^{71-77}$Ga. The collective structure reflected in experimental data is not well reproduced in calculated values. The calculated positive parity states in $^{71,73,75}$Ga are higher in energy in comparison to experimental finding, while for $^{77,79}$Ga, the positive parity states are in better agreement. Both the interactions predict, ...
Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.
Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available
The authors report a two-temperature RF bias stress test on nominal 1.2 W 7.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTF`s of 2020 and 1340 hours were obtained at Tj = 218{degrees}C and 245{degrees}C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.
We report on multijunction GaInP/GaAs photovoltaic cells with total-area efficiencies of 29.5% at one-sun concentration and air mass (AM) 1.5 global and 25.7% one-sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed: the grid design, front surface passivation of the top cell, and bottom surface passivation of both cells. Aspects of cell design related to its operation under different solar spectra and under concentration are also discussed.
This paper discusses design considerations for the recently introduced GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140--180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. The authors focus on the issues of grid design, top-cell thickness, and antireflectance coat. They also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.
The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).
Highly reliable, practical 0.6 #mu#m-band AlGaInP visible laser diodes (LDs), using a GaInP active layer, are described. Over 10,000 hour stable operation at 50 degrees C has been achieved for 3mW light output. Characteristics for visible LDs with an AlGaInP active layer or a multi-quantum-well active layer are also presented.
West Nile virus (WNV) is a mosquito-borne flavivirus that infects the central nervous system of humans and other animals. In this study, we found that C3H/HeN (C3H) mice exhibited a higher morbidity...Full Text Available
This paper reports on a Level 1 PRA performed on the Omega West Reactor at Los Alamos National Laboratory. A Master Logic Diagram was used to identify possible initiating events. A chi-square distribution was used to quantify initiating event frequencies given that no initiating events have occurred in 30 years of OWR operation. The PRA results are presented as both probability density function and cumulative distribution function curves.
We used epidemiologic data for human West Nile virus (WNV) disease in Colorado from 2003 and 2007 to determine 1) the degree to which estimates of vector-borne disease occurrence is influenced by spatial...Full Text Available
The glacial deposits of the West Tensleep Basin in the Bighorn Mountains of Wyoming are mapped and a relative chromology established. The deposits are correlated with the regional model as defined in the Wind River Mountains. A statistical analysis is performed on the density and weathering characteristics of the surficial boulders to determine their validity as indicators of relative age. (ACR)
Aluminum hydroxide coating thicknesses were measured on fuel elements stored in aluminum canisters in K West Basin using specially developed eddy current probes . The results were used to estimate coating inventories for MCO fuel,loading. Brushing tests successfully demonstrated the ability to remove the coating if deemed necessary prior to MCO loading.
Heterostructures based on AlGaInP alloy compounds are very attractive for visible semiconductor lasers, heterojunction bipolar transistors (HBTs), and high-electron-mobility transistors (HEMTs) lattice matched to GaAs substrates. Several wet etching solutions for AlGaP of different compositions have been studied. Al{sub 0.5}Ga{sub 0.5}P is found to etch in HF, H{sub 3}PO{sub 4}, hyphosphorous acid (HOPH{sub 2}:O), HCl, KOH, and 1% Br{sub 2}-methanol (MeOH). Etching of Al{sub 0.5}Ga{sub 0.5}P in HCl is reaction limited with an activation energy of {approximately}54.4 kJ/mol. At fixed conditions, the etch rates of Al{sub x}Ga{sub 1{minus}x}P vary exponentially with x in HF and HCl, while in 1% Br{sub 2}-MeOH and mixtures of HCl and HNO{sub 3} the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for ...
The fluorescence, absorption, infrared and Raman spectra of Sm_3Ga_5O_1_2 have been investigated. The energy-level schemes in the energy range 3000-16000 cm"-"1 have been determined. The number and symmetries of the Sm_3Ga_5O_1_2 crystal normal mode have been obtained by the molecular site group analysis and their comparison with the experiment has been made.
We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 {mu}m In{sub x}Al{sub y}Ga{sub 1-x-y}N alloy grown on 0.5-1.0 {mu}m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In{sub x}Al{sub y}Ga{sub 1-x-y}N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al ...
We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In_xAl_yGa_1_-_x_-_yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 #mu#m In_xAl_yGa_1_-_x_-_yN alloy grown on 0.5-1.0 #mu#m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In_xAl_yGa_1_-_x_-_yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In_xAl_yGa_1_-_x_-_yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have ...
Metabolism of [14C]gibberellin (GA) A12 (GA12) and [14C]gibberellin A12-aldehyde (GA12-aldehyde) was examined in cotyledons and seed...Full Text Available
We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.
A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).
The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.
The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The ...
The information of phase transformation is attained by in situ XRD experiments leading to the knowledge of topological threshold in GeS2-Ga2S3 glasses. The turning point of phase transformation behavior is demonstrated to be glasses containing 14-15 mol% Ga2S3. To interpret it a network demixing model is further improved and proposed for the structure of these ternary or quasi-binary chalcogenide glasses. For the nearest-neighbor coordination environment of glass with a transitional composition of 85.7 mol% (6/7) GeS2.14.3 mol% (1/7) Ga2S3, six-coordinated [S3Ga-X-GaS3] units (X=S or None) are well isolated by the [GeS4] structures, which contributes to the decreasing of precipitation of Ga2S3 crystals in (100-x)GeS2-xGa2S3 (x?14.3) glasses corresponding to the experimental evidence of the phase transformation behavior. This scenario of intermediate-range ...
A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate ...
Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.
(Al{sub y}Ga{sub 1{minus}y}){sup 1{minus}x}In{sub x}P semiconductor alloys lattice-matched to GaAs are widely used in visible optoelectronic devices. One of the most recent developments in this area is the AlGaInP-based red vertical cavity surface emitting laser (VCSEL). These lasers, which employ AlGaInP active regions and AlGaAs distributed Bragg reflectors (DBRs), have demonstrated continuous-wave (CW) lasing over the 630--690 nm region of the spectrum. Applications for these lasers include plastic fiber data communications, laser printing and bar code scanning. In this paper, the authors present an overview of recent developments in the processing and performance of AlGaInP based VCSELs. This overview will include a review of the general heterostructure designs that have been employed, as well as the performance of lasers fabricated by both ion implantation ...
A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.
This paper reports that at present geothermal energy is utilized in the USSR mostly for district heating, and for industrial and agricultural purposes. The populations of 7 towns have district heating that is supplied by thermal waters. The population supplied totals about 125,000 people. The total area of greenhouses is 850,000 m"2. Electric energy generated at geothermal power stations still remains negligible with the installed capacity of the single Pauzhetka station (Kamchatka) being 11 MW. another station at Mutnovka is currently under construction and is expected to be producing 50 MW by 1992 and 200 MW by 1998. The proven geothermal resources in the USSR provide hope for a significant increase in the utilization of the earth's deep heat in the near future.
Considerable effort worldwide has been put into trying to find the best way to utilise the large amount of energy that we put into our dustbins every day. One of the problems encountered is that the waste collection systems tend to gather together in one place between 400 and 1000 t of the stuff everyday and since it is possible to extract rather more than 2 MW from each tonne, that is a lot of energy for which to find a market. In continental European cities, especially Germany, and Sweden with most of the population living in apartment blocks, and with colder winters than the UK, district heating provides a suitable market. With its milder winters, more diverse housing and cheap gas the UK is not such a fertile ground for district heating. But since the passing of the Energy Act in 1984, there is a steady market in electricity generation with the advantage that the purchase tariffs are published so that income can be accurately calculated.
The methanol and aqueous extracts of 10 plant species (Acacia nilotica, Azadirachta indica, Carissa edulis, Fagaropsis angolensis, Harrissonia abyssinica, Myrica salicifolia, Neoboutonia macrocalyx, Strychnos heningsii, Withania somnifera and Zanthoxylum usambarensis) used to treat malaria in Meru and Kilifi Districts, Kenya, were tested for brine shrimp lethality and in vitro anti-plasmodial activity against chloroquine-sensitive and chloroquine-resistant strains of Plasmodium falciparum (NF54 and ENT30). Of the plants tested, 40% of the methanol extracts were toxic to the brine shrimp (LD5050N. macrocalyx had the highest toxicity to brine shrimp nauplii (LD50 21.04+-1.8mg/ml). Methanol extracts of the rest of the plants exhibited mild or no brine shrimp toxicity (LD50>50mg/ml). The aqueo...
Mentougou District acts as a crucial component in the ecological buffer in western Beijing mountainous areas, Beijing, China. Using two Landsat MSS/TM images acquired on July 14, 1979 and July 23, 2005, the vegetation coverage of Mentougou District was calculated based on normalized difference vegetation index and spectral mixture analysis (NDVI-SMA) model. Its temporal and spatial changes were analyzed according to digital elevation model (DEM) image, social and economic data. The results showed that the vegetation coverage decreased from 76.4% in 1979 to 72.7% in 2005. Vegetation degradation was probably the result of human disturbance, such as outspreading of resident areas, and coal and stone mining activities, while vegetation restoration might be contributed by the combined effects o...
The funding for a coal-liquefaction demonstration plant near Morgantown, W.Va., appears more certain since Japan has committed $175 million toward the project. West Germany has already signed a memorandum of understanding to contribute 25% of the expected $700 million cost. West Virginia Governor J. Rockefeller has said that he feels sure the Carter Administration will approve the project since half the money is assured. The solvent-refined-coal (SRC) demonstration program began in July 1978 with the award of two separate multiphased contracts for development of a solid process, SRC-I, and a liquid process, SRC-II. The US Department of Energy is expected to choose one of the projects for detailed design and construction by the end of fiscal 1979.
To study the causes of agricultural declines in south-west Sweden, a multi-proxy study including pollen analysis, bog surface wetness indicators and aeolian sediment influx reconstructions was carried out on the Store Mosse Bog, situated on the coastal plain of Halland. Patterns of agricultural changes during the past 6,000?years from this study were compared to one additional site on the coastal plain (Undarsmosse Bog) and to four sites in the forested upland region. First, we compared land use activity on the coastal plain and in upland regions of south-west Sweden. Three periods with reduced agricultural activities were observed, primarily in records from the coastal plain. Next, the causes for these declines were studied by comparing land use indicators in the pollen records from the S...
The report presents details of the distributions of air pollution in the Berlin area and the developments of the past 20 years. Highly polluted areas are indicated in which air pollution reduction measures are particularly urgent. The report therefore intends not only to inform but also to point out the deficiencies of air pollution abatement measures, so that political consequences can be derived and measures can be taken. In all, data were recorded by 39 measuring stations in West Berlin, 16 in East Berlin, and 7 in Potsdam and Frankfurt/Oder. In most stations, sulphur dioxide and airborne dust were measured; 14 stations in West Berlin and one in East Berlin measured carbon monoxide and nitric oxides; 8 stations in West Berlin recorded ozone concentrations. (orig./KW).
Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.
AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a ...
The pyrethroid knockdown resistance gene (kdr) has become widespread in Anopheles gambiae in West Africa. A trial to test the continuing efficacy of insecticide-treated...Full Text Available
A method is described for the supervision of technicians engaged in microscopical screening of large numbers of stools for Schistosoma mansoni ova. The scheme presents graphically...Full Text Available
A total of 25 papers were presented at the conference in 6 sessions: illumination and communication; power and safety; knowledge based systems; mine-wide monitoring; instrumentation control and automation; remote sensing and imaging.
Israel has faced the challenge presented by epidemic poliomyelitis by using different immunization strategies. In the 1950s, inactivated poliovirus vaccine (IPV) helped to reduce the total burden of...Full Text Available
Previous studies with a limited number of strains have indicated that there are two genotypes of yellow fever (YF) virus in Africa, one in west Africa and the other in east and central Africa. We have...Full Text Available
BackgroundIn Trinidad and Tobago, the law on the mandatory use of seat belts was passed in 1995, but this law is hardly enforced. The objective of this study was to determine the...Full Text Available
Petroleum is the unchallenged energy market leader in West Germany,having a share of 42%; natural gas accounts for 16-17%. West Germany imports 29% of its natural gas from the Soviet Union, 28% from the Netherlands, 14% from Norway, and 1% from Denmark. In West Germany many-branched natural gas distribution system is operated, equipped with a.o. 21 installations for underground storage which results in a great flexibility of the system. Because of the preferential treatment given to the use of coal as fuel for power plants the share of natural gas has decreased to the present 6% in the last ten years. In the indutrial sector the share is 18%. Strict air pollution abatement measures ('TA-Luft') favour the use of natural gas. However, duty has been levied on the use of natural gas per January 1st, 1989. For space heating of houses and commercial buildings the share of natural gas is 27%. 7 figs., 9 ills.
Cooperative research in coal liquefaction from Auburn University, University of Kentucky, University of Pittsburgh, West Virginia University, University of Utah, and the UK Center for Applied Energy Research, are briefly discussed. Topics covered include desulfurization, chemical reactivity, coprocessing, and catalysis. (CBS)
On the west flank of the Wind River Mountains, Wyoming, are several large lakes occupying glacially scoured depressions dammed by terminal moraines. Fremont, Willow, and New Fork Lakes, having maximal...Full Text Available
A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and ...
GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...
The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been ...
Ga{sub 0.6}In{sub 0.4}P/(Al{sub 0.8}Ga{sub 0.2}){sub 0.4}In{sub 0.6}P strain-compensated multiple quantum wells (SCMQW) and Ga{sub 0.5}In{sub 0.5}P/(Al{sub 0.4}Ga{sub 0.6}){sub 0.5}In{sub 0.5}P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.
Ga_0_._6In_0_._4P/(Al_0_._8Ga_0_._2)_0_._4In_0_._6P strain-compensated multiple quantum wells (SCMQW) and Ga_0_._5In_0_._5P/(Al_0_._4Ga_0_._6)_0_._5In_0_._5P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.
Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.
Continuous-wave (cw) operation at temperatures up to 23 /sup 0/C of an Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P/Ga/sub 0.52/In/sub 0.48/P/ Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 /sup 0/C for a device with a 10-..mu..m-wide and 250-..mu..m-long ion-implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 /sup 0/C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (approx.0.3 ..mu..m) p-AlGaInP layer and a p-Al/sub 0.76/Ga/sub 0.24/As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.
The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical ...
High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...
The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .
The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.
Two plasma chemistries, i.e., CH_4/H_2/Ar and Cl_2/Ar, were compared for the etching of InGaP, AlInP, and AlGaP under inductively coupled plasma (ICP) conditions. While the etching with CH_4/H_2/Ar discharges appears to be ion driven, Cl_2/Ar discharges showed an additional strong chemical enhancement. The highest etch rate (#approx#1 #mu#m/min) for InGaP was achieved at high ICP source power (#>=#750 W) with the Cl_2/Ar chemistry. Cl_2/Ar discharges provided very smooth surfaces in all three materials with root-mean-square roughness measured by atomic force microscopy around 2 nm. This result may be due to the efficient ion-assisted product desorption in this chemistry. The etched near-surface region of InGaP (#approx#100 Angstrom) with Cl_2/Ar maintained almost the same stoichiometry as that of the unetched control. By contrast, the CH_4/H_2/Ar plasma chemistry produced somewhat rougher surfaces ...
To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the ...
Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.
This report addresses remote monitoring of coal waste impoundments for stability. Existing automated geotechnical monitoring systems are described and reviewed along with details of instruments suitable for such systems. An impoundment in West Virginia, which was in the construction stage, was instrumented and monitored between July 1979 and May 1981. Sensors that measure surface and subsurface parameters including settlement, horizontal deflection, surface tilt, pore water pressure, seepage, pond level, and meteorlogical parameters were installed. Recommendations for improving and expanding the capabilities of the monitoring system are given.
The DP West Plutonium Facility operated by the Los Alamos National Laboratory, Los Alamos, New Mexico, was decontaminated between April 1978 and April 1981. The facility was constructed in 1944 to 1945 to produce plutonium metal and fabricate parts for nuclear weapons. It was continually used as a plutonium processing and research facility until mid-1978. Decontamination operations included dismantling and removing gloveboxes and conveyor tunnels; removing process systems, utilities, and exhaust ducts; and decontaminating all remaining surfaces. This report describes glovebox and conveyor tunnel separations, decontamination techniques, health and safety considerations, waste management procedures, and costs of the operation.
Foinaven and Schiehallion/Loyal are the first oilfields West of Shetland (WoS). They were developed using Floating Production, Storage and Offloading (FPSO) technology in water depths of between 350m and 550m and arguably the harshest environmental conditions yet experienced offshore. Traditional project time scales were halved by shortening and overlapping the reservoir and facilities developments. This paper describes some of the challenges faced by the geotechnical engineers working on these projects and summarises lessons learnt from site investigations and the design and installation of foundations. (author)
A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.
The fluorescence, absorption, infrared and Raman spectra of Sm/sub 3/Ga/sub 5/O/sub 12/ have been investigated. The energy-level schemes in the energy range 3000-16000 cm/sup -1/ have been determined. The number and symmetries of the Sm/sub 3/Ga/sub 5/O/sub 12/ crystal normal mode have been obtained by the molecular site group analysis and their comparison with the experiment has been made.
This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}
X-ray photoemission spectroscopy has been used to measure the valence band offset {Delta}E{sub v} for the AlP/GaP (001) heterojunction interface. The heterojunction samples were prepared by molecular-beam epitaxy. A value of {triangle}E{sub v}=0.43 eV is obtained (staggered band alignment, with AlP valence band below that of GaP). 24 refs., 8 figs., 1 tab.
A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.
Kinetics of decomposition of gallium and alkali metal intermetallic compounds in the systems LiGa-LiOH, LiGa-NaOH and LiGa-KON was studied in the temperature range of 40-80 deg C. It was ascertained that increase in temperature gives rise to increase in decomposition rate, whereas increase in hydroxide concentration involves the reaction deceleration. An assumption was made that the decomposition occurs with superimposing of two mechanisms, i.e. chemical and electrochemical decomposition. Basic kinetic characteristics of the process were determined - decomposition rate constant and current density
Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.
This paper proposes the design of LQ-PSS (linear quadratic power system stabilizer) for improving power system stability using genetic algorithm(GA). We are turned weighting matrices of LQ-PSS using GA. To evaluate the usefulness of the proposed method, we performed the nonlinear simulation on a single machine infinite system. As results on a single machine infinite system. As results of the simulation, the proposed method shows the better control performance than CPSS(conventional power system stabilizer) in terms of settling time and damping effects. (author). 7 refs., 7 figs., 3 tabs.
The crystal field splitting of the "3H_4 ground state of the Pr ion in PrFeO_3 and PrGaO_3 has been investigated by inelastic scattering of the thermal neutrons. At several temperatures the transitions have been measured by TAS and TOF methods for polycrystalline PrFeO_3 and by the TOF method for polycrystalline PrGaO_3. Energy level schemes which are different for these materials are given. (author).
This article examines problems relating to the calculation of the position of regions of limited solubility of components in the liquid state for four-component systems. An approach based on the use of criterion of stability with respect to diffusion for obtaining equations which describe the region of stratification of the liquid phase in a four-component system is used. The authors used a ES-1020 computer to analyze the critical phenomena in Al-In-P-Sb, Al-Ga-In-P, Al-Ga-In-As, and In-Ga-As-P systems. The position of the spinode in the phase diagram of a four-component system is obtained.
Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.
Al, Ga and In complexing with methylthymol blue (H_6R) purified by gel filtration is studied. in the case of metal excess complexes with the ratio of components M:H_6R=2:1 with #lambda#=587(Al), 590(Ga) and 593 nm(In) appear. In the case of reacting agent excess complexes with the ratio of component 1:1 with #lambda#_m_a_x=480-490 (Al) and 480 nm(Ga, In) appear. The mechanism of complexing reactions is studied. Molar extinction coefficients and stability constants are calculated.
The present publication is based on facts, data, knowledge and projects, which have been incorporated in the development of an energy concept for the district Schmalkalden-Meiningen. The energy concept of a district is a concept oriented at action on and realisation of mid-term and long term decisions in the fields of energy policy, economy and ecology, which must be taken by municipal and economic decision-making bodies. The energy concept accords with the targets of the Agenda 21, the environmental targets of the Federal Republic of Germany and of the Land Thuringia. Accepting this energy concept the district Schmalkalden-Meiningen shows its willingness to contribute to a lasting development in all fields of economy and ecology and thus does justice to its increasing responsibility. (orig.) [German] Die vorliegende Veroeffentlichung baut auf Fakten, Daten, Erkenntnissen und Projekten auf, die in die Erarbeitung des ...
This article includes a section on the coke and by-products plant. A 60-oven battery of 6-metre Kaiser-Dialer ovens produces 1800 tons of blast furnace coke a day. A coal blend mixture of 88% high volatile and 12% low volatile is used.
...Korea 2008 NOx charges as feebate in Sweden Pilot Project on Solid Waste Management in Khulna City: Community Organisation and Management Plastic Bag ban in Dhaka City, Bangladesh Policies on Conservation of the DMZ District Ecosystem Ministry of Environment Republic of Korea 2007 Policies on Promoting Environmental Industries and International Cooperation ...
... The larvae's only hope for survival is if the antibiotic tetracycline is present -because it mops up the enzyme. The developers hope male GM mosquitoes will compete with normal males for females so that repeated releases cut numbers of A. aegypti in dengue-prone areas. The mosquitoes will be released in the inland districts of Bentong in the state of Pahang, and Alor Gajah and Melaka in the state of Malacca, according to the National Biosafety Board. Each location will have two release phases: the first at a site ...
The Sacramento Municipal Utility District is developing a number of demonstration projects using geothermal heat pumps. This paper discusses some of the barriers and issues that have emerged over the past two years. The most important barriers are: regulatory impediments; high first cost; and a lack of local design and installation infrastructure.
This study examines the extent of radioactive pollution of moss cover of forest communities of the Kamenskii district of the Sverdlovsk region. This area contains the periphery section of the Eastern-Ural Radioactive Trace, formed as a result of the Kyshtymskii accident. Mosses do not release radionuclides for a long time, making them a biological indicator of radioactive environmental pollution and making them useful for radioecological monitoring. 14 refs., 2 figs., 1 tab.
Three systems for the heat supply in the built environment have been compared for the costs, the energy consumption and emissions of CO{sub 2}, NO{sub x} and SO{sub 2}. The heating systems compared are based on central heating boilers, district heating systems in combination with combined steam and gas turbine cycles, and heating by means of several gas engines. From the results it appears that the boilers demand the lowest investments. The district heating systems are more expensive. Both heating systems, however, show considerable savings of energy (55 to 70%). The exploitation costs depend strongly on the fuel price scenarios used and the assumptions with regard to interest and inflation. The emissions of CO{sub 2} are also considerably lower for both combined heat and power generating systems. The use of gas engines results in higher acidifying emissions compared to the system with the central heating boilers, and lower acidifying emissions ...
Indicators of source water use in different economic branches, water consumption in recycling and recycling-successive water supply in 1980?2006 are analyzed. Trends were identified in variations in specific water consumption in industry, agriculture, and municipal economy. Territorial differentiation of wetness indicators of regional product over federal districts and constituent territories of the RF is shown. Wetness values of gross domestic product in different economies are compared.
The coal mining district in southeastern Santa Catarina State is considered one of the most polluted areas of Brazil. The author has identified significant preliminary results on the application of MSS-LANDSAT digital data to monitor the coal refuse areas and its environmental consequences in this region.
Mitsubishi Research Institute has analyzed the energy demand of a typical Japanese city, Yokohama, as well as the distribution of fossil-energy flow, and the final consumption by sectors. It has evaluated the effectiveness of various energy conservation measures, (e.g., cogeneration, electric cars, insulation,...) in countering the global warming trend. This study defines a viable methodology which may be utilized, in the future, in examining the effectiveness of environmental policies. (TEC). 1 tab., 4 figs.
Continuous wave operation of an Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P /Ga/sub 0.52/In/sub 0.48/P /Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 ..mu..m and the threshold current was 55 mA for a diode with a nitride-insulated, 8-..mu..m-wide and 250-..mu..m-long stripe geometry.
The oxygen vacancies distribution in the rigid lattice and the thermally activated motion of oxygen atoms are studied in La1-xSrxGa1-xMgxO3-x (x=0.00; 0.05; 0.10; 0.15 and 0.20) compounds. For that 71Ga, 25Mg and 17O NMR was performed from 100 K up to 670 K, and ion conductivity measurements were carried out up to 1273 K. The comparison of the electric field gradients at the Ga- and Mg-sites evidences that oxygen vacancies appear exclusively near gallium cations as a species trapped below room temperature in local clusters, GaO5/2-#square#-GaO5/2. These clusters decay at higher temperature into mobile constituents of the structural octahedra Ga(O5/6#square#1/6)6/2. At the same time, the nearest octahedral oxygen environment of magnesium cations persists at different doping levels. The case of two adjacent vacant anion sites is found highly unlikely within the ...
We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and ...
In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}
We report measurements of the temperature dependence of the threshold current of GaAs, 1.3-..mu..m InGaAsP, and 1.5-..mu..m InGaAsP double heterostructure lasers using short electrical pulses. T/sub 0/approx.200 K is observed for all the lasers. These high T/sub 0/ values show that the carrier density at threshold does not increase rapidly with increasing temperature in any of the lasers studied and thus the observed low cw T/sub 0/ of InGaAsP lasers is primarily due to a decrease of the carrier lifetime at threshold with increasing temperature.
Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.
A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.
Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.
Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).
We report the lasing characteristics of gain-guided AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes. At room temperature, continuous-wave operation is achieved over the wavelength range of 657--685 nm with the minimum threshold current at 670 nm. Devices with a 10-[mu]m diameter have threshold currents as low as 1.25 mA at room temperature (297 K) and 0.8 mA at 250 K. In addition, a single predetermined linear polarization state is found, independent of the lasing mode order and operating temperature.
To eliminate their classical brittleness and flexibility problems zein films were plasticized by incorporation of different phenolic acids (gallic acid (GA), p-hydroxy benzoic acid (HBA) or ferulic acids (FA)) or flavonoids (catechin (CAT), flavone (FLA) or quercetin (QU)). The use of GA, CAT, FA and HBA at 3 mg/cm2 eliminated the brittleness of films and gave highly flexible films showing elongations between 135% and 189%, while FLA and QU caused no considerable effect on film elongation. The films containing FA and HBA showed extreme swelling and lost their structural integrity when hydrated in distilled water. In contrast, CAT and GA containing films maintained their integrity following hydration. Most of the GA (up to 93%) and a considerable portion of CAT (up to 60%) in the films exis...
Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of ...
Within the framework of the effective-mass approximation, using a variational method, we have calculated the effect of intense laser radiation on the binding energy of the shallow-donor impurities in a Ga1- x In x N y As1- y /GaAs single quantum well for different nitrogen and indium mole concentrations. Our numerical results show that the binding energy strongly depends on the laser intensity and frequency (via the laser dressing parameter) and it also depends on the nitrogen and indium concentrations. Impurity binding energy under intense laser fields can be tuned by changing the nitrogen and indium mole fraction.
The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)
A gain-guiding tapered stripe laser was fabricated using a Ga/sub 0.5/In/sub 0.5/P/(Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 /sup 0/C, an aspect ratio of about 2, and an astigmatism near 25 ..mu..m. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 /sup 0/C with a constant output power of 3 mW.
This paper presents results from one of the projects developed within the general framework of the international Programme 'CORE' (Cooperation for Rehabilitation in Belarus). The overall objective of the programme is to make sustainable improvements to the living conditions of the inhabitants of the territories affected by the Chernobyl disaster. The CORE Programme is currently developed in four contaminated districts of Belarus (Bragin, Cherchersk, Slavgorod and Stolyn) in the following four areas: economic and social development; health care and surveillance; education and culture; and radiological quality. The project that is presented here refers specifically to the field of 'radiological quality' and will last until the end of 2008. The project named 'implementation of an inclusive radiation monitoring system' was launched in April 2004 in the Bragin district, which is one of the most ...
Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to ...
Thermal wet oxidations of GaP and Al{sub 0.4}Ga{sub 0.6}P at 650 degree sign C for various times have been performed. Comparisons are made on oxidation rates and post oxidation morphology. Transmission electron microscopy shows that when oxidizing GaP, polycrystalline monoclinic GaPO{sub 4}{center_dot}2H{sub 2}O forms without noticeable loss of phosphorus. Oxidation for 6 h or more leads to poor morphology resulting in cracks and detachment. A thickness expansion of about 2.5-3 times is noticed as a result of oxidation. In contrast, oxidized Al{sub 0.4}Ga{sub 0.6}P exhibits much better morphology without cracks or detachment from the substrate. The oxide has an almost amorphous-like microstructure. The oxidation process shows typical diffusion-limited reaction at long anneals. Preliminary work on the oxidation of AlP indicates that the reaction leads to formation of Al{sub 2}O{sub ...
The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, ...
The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, ...
The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is reported from pure and ...
Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit ...
Frequency response measurements are used to determine the carrier lifetime of 1.3-..mu..m InGaAsP buried heterostructure lasers between 1 mA and threshold. The data confirm previous results on the radiative and Auger recombination coefficients and reveal the presence of a nonradiative current which dominates at low currents and contributes 4 mA at threshold.
The structural changes attendant on intermartensitic transformation in a Ni-Mg-Ga shape memory alloy are considered using magneto-optical visualization with the help of ferrite-garnet monocrystalline films. It is established that on the intermartensitic transformation the complete reorganization of martensite macrostructure fails. Martensite crystals resulted from the basic transformation change somewhat their sizes on intermartensitic transition. The existence of large-scale labyrinth magnetic domain structure is revealed
The crystal structure, lattice strain due to the antiferromagnetic ordering, and magnetic form factor in the itinerant 5f compounds UTGa_5 (T=Ni, Pd, Pt) have been studied by neutron scattering. High-resolution powder diffraction revealed that the tetragonality of the U-Ga layers increases down to the series of the transition metal element T. The integrated intensities of the antiferromagnetic reflections can be well explained with the Neel-type structure for UNiGa_5, whereas UPtGa_5 has the antiferromagnetic stacking of the ferromagnetically ordered uranium moments in the c plane. In both compounds the uranium moments orient along the c axis with moments of 0.75(5) and 0.32(5) #mu#_B for UNiGa_5 and UPtGa_5, respectively. No magnetic peak could be observed in the powder diffraction pattern of UPdGa_5 due to the small magnetic moment less than the experimental ...
We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)
The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.
We use the Generalized Quasi-Chemical Approach (GQCA) combined with ab initio ultrasoft pseudopotential calculations within density functional theory in order to obtain the structural and electronic properties of Al_xGa_yIn_1_-_x_-_yX (X=As, P or N) quaternary alloys in the zincblende structure. Results for the bond lengths show that their variations with composition are approximately linear and that they do not deviate much from the values of the corresponding binary compounds. For the variation of the band gaps, we obtain a bowing parameter b=0.26 eV for the (Ga_0_._4_7In_0_._5_3As)_z(Al_0_._4_8In_0_._5_2As)_1_-_z quaternary alloy lattice matched to InP, in very good agreement with experimental data. In the case of AlGaInN, a bowing parameter of 0.22 eV is obtained for zincblende AlGaInN lattice matched to GaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
The semiconducting compound CuGa_xIn_1_-_xSe_2 crystallizes in the chalcopyrite structure (space group Ianti 42d, Z=4). The X-ray powder data for x=1, 0.75, 0.6, 0.5, 0.4, 0.25 and 0.0 have been collected and it is found that the lattice parameters a and c and their ratio c/a vary linearly with x. Thus the composition of any chalcopyrite in the pseudo-binary system CuGaSe_2 and CuInSe_2 can be obtained from the accurate lattice parameters. The crystallite size determined from the (112) plane is minimum for x=0.50 (#propor to#1000 A) and away from x=0.50 it increases. A value of u=0.240 (5) has been established for fixing, the Se-atom positions in the CuGa_0_._5In_0_._5Se_2 solid solution. The JCPDS Diffraction File No. for CuInSe_2 is 40-1487 and for CuGa_0_._5In_0_._5Se_2 is 40-1488. (orig.).
Three field experiments were conducted at the research fields of Plant Protection Research Institute, Iran, at different locations in 2004-2005 to study the efficacy of different broadleaved herbicides to control weeds in wheat. Treatments were the full-season hand weeded and weed-infested controls, and post-emergence applications of florasulam plus flumetsulam at 8.75, 10.50, and 12.25ga.i./ha, 2,4-D plus carfentrazone-ethyl at 210, 245, 280, and 490ga.i./ha, bromoxynil plus MCPA at 75, 100, and 150ga.i./ha, 2,4-D at 560, 720, and 1120ga.i./ha, tribenuron methyl, and 2,4-D plus MCPA. Herbicides were applied at wheat tillering stage. Naturally occurring broadleaved weed populations were used in experiments. Results indicated that bromoxynil plus MCPA at 150ga.i./ha, 2,4-D plus MCPA, and 2,...
The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.
We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change ...
The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...
Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In ...
GaN and Al{sub 1{minus}x}Ga{sub x}N films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10{sup 9} ohm-cm and 10{sup {minus}3}--10{sup {minus}8} cm{sup 2}/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.
GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.
The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K{sub {alpha}} X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K{sub {alpha}} X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the ...
The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K_#alpha# X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K_#alpha# X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the ...
Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear ...
The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE ...
The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, ...
The properties and low pressure organometallic vapor phase epitaxy of Ga{sub x}In{sub 1{minus}x}P/(AlGa){sub 0.5}In{sub 0.5}P quantum well (QW) laser diode heterostructures with Al{sub 0.5}In{sub 0.5}P cladding layers, and having wavelength 614 < {lambda} < 690 nm, are described. At longer wavelengths ({lambda} > 660 nm), threshold current densities under 200 A/cm{sup 2} and efficiencies greater than 75% result from a biaxially-compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.
Room-temperature pulsed laser operation of (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P /(Al/sub 0.17/Ga/sub 0.83/)/sub 0.5/In/sub 0.5/P / (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved. The lasing wavelength is 626.2 nm, which is the shortest ever reported for an AlGaInP double heterostructure laser. Threshold current density is 50 kA/cm/sup 2/ for a diode with a 20-..mu..m-wide and 200-..mu..m-long stripe.
The geological structure of Mesita del Buey at Technical Area 54 (TA-54) was examined using precise surveying of the contact between units 1v and 2 of the Tshirege Member of the Bandelier Tuff at 3.5 km along the north wall of Pajarito Canyon and 0.6 km along the north wall of a tributary to Canada del Buey. Estimated structure contours on this contact indicate typical strikes of N40E to N70E along this part of Mesita del Buey, although the apparent strike of the tuff is E-W at the western part of the survey. Typical dips are 1.0{degree} to 2.0{degree} to the east or southeast, with an estimated maximum dip of 3.2{degree} near the west end of Material Disposal Area G. Thirty seven faults with vertical displacements of 5 to 65 cm were observed in outcrop along the Pajarito Canyon traverse, and, due to the incomplete exposure of the unit 1v-unit 2 contact, many more faults of this magnitude undoubtedly exist. The faults have a wide range in strike and have either ...
In association with excavation of the No. 135 steam producing well in the Onikubi geothermal power plant in Miyagi Prefecture, shapes of production zones and drilling-induced fracture (DIF) were acquired from the borehole televiewer (BHTV) data. The BHTV logging shoots sound waves onto well walls of wells filled with fluid and detects the reflection waves to investigate the state of the well walls. Vertical fracture with opening lengths from 2 to 3 m were found at depths of about 1232 m and 1312 m. Water run-off has occurred at a depth of about 1312 m during the excavation, to which these vertical fractures might have contributed possibly. In depths of about 1232 m and 1312 m, fractures inclining toward north-east direction and south-west direction are predominant. Some fractures in the depth of about 1333 m incline toward east-south-east direction and west-north-west direction. Fracture inclination azimuth in all of the present logging ...
This final report for the Swiss Federal Office of Energy (SFOE) is one of a series of reports concerning municipal development in various cities in Switzerland. The four city districts involved include Basel (Gundeldinger Feld), Lausanne (Bellevaux), Lucerne (Basel-/Bernstrasse) and Zurich (Werdwies). This paper takes a look at aspects of building ecology. In the four areas, the following building types and projects were examined with respect to their ecology: Basel: conversion of commercial premises to a community centre, Lausanne and Lucerne: Enhancement of residential areas, Zurich: a new residential building. Criteria examined include general building ecology, building materials, raw materials, toxic substances, recycling, maintenance and deconstruction, energy for heating and hot water, grey energy, electricity, ground usage, water, wastes and public infrastructure. Knowledge gained along with questions and problems still to be addressed are summarised and ...
During the past 15 years, 60 straw-fuelled and 25 wood-fuelled district heating stations were commissioned in Denmark, as well as 6 biomass-fuelled heating power stations. All of these plants are equipped with high-pressure boilers, heat exchangers for district heating, and steam turbines with generators. Today, 5 percent of the total energy consumed is provided by biomass fuels. With the new taxes on carbon dioxide emissions and measures to promote renewable energy sources, a 15 percent share can be expected soon. (orig/SR) [Deutsch] In Daenemark wurden in den letzten 15 Jahren 60 strohbefeuerte und 25 holzbefeuerte Fernwaermewerke in Betrieb genommen. Dazu sind in den letzten Jahren 6 biomassebefeuerte Heizkraftwerke gekommen. Alle Anlagen haben Hochdruckkessel, Waermetauscher fuer Fernwaerme und Dampfturbinen mit Generatoren. Heute werden in Daenemark 15 Prozent des Energieverbrauchs mit Biomasse gedeckt. Durch Besteuerung der ...
The report outlines the role of the IEA Greenhouse Gas R and D Programme, gives details of participants and of publications and summarises achievements of 1998. A successful conference on Greenhouse Gas Control Technologies was held in Interlaken, Switzerland. Technical studies reported include novel power generation concepts for removing carbon dioxide prior to or after combustion, using seawater for CO{sub 2} capture, investigating carbon dioxide sequestration in conjunction with enhanced coalbed methane recovery and applying retrofitting to power plants and to offshore oil and gas platforms. Systems studies taking a broader view include investigating the potential for combined energy systems (power generation with district heating, power with district cooling etc.) to reduce CO{sub 2} abatement cost, studies on the LNG/power generation fuel cycle, assessing the potential of methanol as an energy carrier investigating methods of making ...
A process model was used to better understand the controls on the chemical evolution of drainage in a historic mining district. At the Pecos Mine Operable Unit, New Mexico, drainage near the waste rock pile is acidic (pH varies from 3.0--5.0) and carries high concentrations of Zn, Al, Cu and Pb. As drainage flows toward the Pecos River, pH increases to greater than 7 and heavy metal content decreases. A process model of natural attenuation in this drainage shows the main controls on pH are reaction with a local bedrock that contains limestone, and concurrent mixing with tributary streams. Models that account for both calcite dissolution and mixing reproduce the observed decrease in aqueous metal concentrations with increasing pH. Contaminant concentrations attenuate primarily via two distinct pathways: Al, Cu, Fe and Pb precipitate directly from solution, whereas Zn, Mg, Mn and SO{sub 4} concentrations decrease primarily through dilution. Additionally, Pb adsorbs ...
The Berliner Kraft- u. Licht (BEWAG)AG have been conducting investigations during the last several years on a 110 kV low-pressure oil-filled high-power cable with a water cooled conductor and a load capacity of 950 MVA at 110 kV. After successful transport of the cable drums (weight: 16 metric tons; diameter: 4.9 m) from the manufacturing in Cologne, West Germany, to Berlin (West), and after laying of the cable over a 300 m stretch, the commissioning tests in accordance with IEC and VDE* standards have been concluded, and several loadings with a current of 5000 A have been performed. Now, after completion of various improvements in the test system, preparations are underway for initiation of long-term testing over a period of approx. 18 months.
Several types of coatings have previously been visually identified on the surface of 105-K East and 105-K West Basins fuel elements. One type of coating (found only in K West Basin) in particular was found to be a thick translucent material that was often seen to be dislodged from the elements as flakes when the elements were handled during visual examinations (Pitner 1997). Subsequently it was determined (for one element only in a hot cell) that this material, in the dry condition, could easily be removed from the element using a scraping tool. The coating was identified as Al(OH){sub 3} through X-ray diffraction (XRD) analyses and to be approximately 60 {micro}m thick via scanning electron microscopy (SEM). However, brushing under water in the basin using numerous mechanical strokes failed to satisfactorily remove these coatings in their thickest form as judged by appearance. Such brushing was done with only one type of metal brush, a brush ...
Increasing economic and recreational opportunities, attractive scenery and a perception of a better quality of life are luring people to the coast. Unfortunately, these activities together with the commensurate increase in population in the area inevitably result in pollution of coastal waters with excessive microorganisms and other pollutants. Microbial pollutants not only contaminate the coastal water but also aquatic food sources, thus posing a health risk to consumers. Fish is a major source of protein in Cameroon, especially in the coastal areas. In this study, we investigated the microbiological quality of fish from the Limbe and Tiko beaches in South West Cameroon from May to October 2007. We isolated human pathogenic bacteria from three anatomic sites (skin, gills, intestine) of 50 fish (150 specimens) and investigated their susceptibility patterns to a battery of antibiotics. Data were analyzed statistically using chi2 with significance set at p South ...
Through the analysis of the relations between "3H monitoring results of sea water in West Daya Bay carried out by Guangdong Environmental Radiation Research and Monitoring Center (GERC) from 1994 to 2000 and the quantity of liquid "3H discharges made by Guangdong Nuclear Power Station (GNPS), the function has been found by fitting to describe the relation between "3H average concentrations (hereafter as to average concentration or concentration) for all sampling points at the same time and the quantity of liquid "3H discharges. "3H instantaneous concentrations or yearly average concentration in West Daya Bay can be estimated conveniently by using this function corresponding to either actual discharges or supposed discharges (the way for hydrodynamic calculation) from the GNPS's yearly "3H liquid discharge. The results have shown that the general influences both actual discharges and supposed sub-continuous discharges are almost the same and ...
It is currently unclear if the potential for West Nile virus transmission by mosquito vectors in the eastern United States is related to landscape or climate factors or both. We compared abundance of vector species between urban and suburban neighborhoods of Henrico County, VA, in relation to the following factors: temperature, precipitation, canopy cover, building footprint, and proximity to drainage infrastructure. Mosquitoes were collected throughout the 2005, 2006, and 2007 seasons and tested for West Nile virus (WNV) in pools of 10-50. Test results of mosquito pools were compared to average site abundance from 37 sites in Henrico County, VA; abundance was then examined in relation to ecological variables. Urban infrastructure was positively correlated with the abundance of Culex pipiens L./Cx. restuans, and our findings implicate combined sewer overflow systems as large contributors to Culex vector populations. No measure of urbanization ...
We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser ...
An interest in electronic materials has led me to investigate new synthetic approaches to III-V' type semiconducting (13-15, current IUPAC designation for B and N groups in the Periodic Table) and magnetic (3-15) compounds. It is now possible to prepare binary (GaAs and GdP) and ternary mixed-metal (Al[sub x]Ga[sub 1-x]As) and mixed-pnictide (GaP[sub x]As[sub 1-x]) compounds in seconds from rapid, low-temperature-initiated metathesis reactions between a metal (III) trihalide and a trisodium pnictide, exemplified by MX[sub 3] + Na[sub 3]Pn [yields] MPn + 3 NaX, where M is Al, Ga, In, (Al,Ga), or a lanthanide; X is F, Cl, or I; and Pn is P, As, Sb, or (P,As). The precursors are mixed together in a dry box and ignited by light grinding with a mortar and pestle, or by brief, local heating from a hot filament. These reactions are very exothermic (calculated [Delta]H[sub rxn] ...
New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...
A doubly Q-switched laser with both an acousto-optic (AO) modulator and a GaAs saturable absorber can obtain a more symmetric and shorter pulse with high pulse peak power, which has been experimentally proved. The key parameters of an optimally coupled doubly Q-switched laser with both an AO modulator and a GaAs saturable absorber are determined, and a group of general curves are generated for what we believe is the first time, when the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined, and the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density as well as the influence of the AO Q-switch are considered. These key parameters include the optimal normalized coupling parameter, the optimal normalized GaAs saturable absorber parameters, and the normalized parameters of the AO Q-switch, which can maximize ...
High microwave power (1,000 W) electron cyclotron resonance CH{sub 4}/H{sub 2}/Ar discharges produce etch rates for In{sub 0.5}Ga{sub 0.5}P, Al{sub 0.5}In{sub 0.5}P{sub 0.5}, and Al{sub 0.5}Ga{sub 0.5}P of {approximately} 2,000 {angstrom}/min at moderate RF power levels (150 W) and low pressure (1.5 mTorr). This is approximately a factor of five faster than for conventional reactive ion etching conditions where much higher ion energies are necessary. The etched surfaces are smooth over a wide range of CH{sub 4}-to-H{sub 2} ratios and microwave powers. AlInP is more resistant to preferential loss of P from the near-surface during etching than is InGaP. While the etching is ion-driven, pure Ar discharges produce rough surfaces and the CH{sub 4}/H{sub 2} is necessary in the achievement of acceptable morphologies. The InGaAlP/GaAs heterostructure is being increasingly utilized in diode lasers, light ...
We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our ...
We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that ...
A stochastic analysis is presented of the probability of overtopping of a dam. The discussion is based on the case of a dam for a small water storage reservoir which has recently been constructed in the Saar district in the FRG. The problem is first solved by means of a simulation method. However, it is possible to describe the result of the sumulation method by means of a much simpler model which is based on a solution of the failure integral of Freudenthal for uncorrelated resistances and loads. It is shown that the actual safety of this dam against overtopping is extremely sensitive to both the operation rule for the reservoir, and the freeboard allowance. Some general conclusions are derived from this study for assisting in the ongoing discussion of dam safety. (6 figs, 1 tab, 7 refs)
Twenty years after its building, the tertiary sector of La Defense district near Paris has been rehabilitated. The main reason is not only the age and wear of materials but the heating costs, the fire protection regulations, the search for a better air quality and air renewing with less dusts, smells and noise and a controlled moisture. This paper describes first the original installation of the Monge CB 6 office building and then the renovated installation: the central hot and cold air-treatment plant, the variable flow ventilation system, the air extraction and supply system threw the roofs and the pressure and thermal regulation of the installation. (J.S.)
16 papers are presented covering: remote sensing - an aid to environment management; remote sensing application; monitoring environmental changes over iron ore mining areas; monitoring and management of environmental degradation due to geological factors; use of Landsat multispectral scanner data in environmental monitoring; geotechnical engineering problems with abandoned limestone mines; photogrammetric monitoring of mining environment; slope monitoring in open cast mines using close range remote sensing method; geobotanical remote sensing and mineral prospecting; geographical information in study of geo-environment through remote sensing; and alteration mapping in cuprite mining district.
To improve the detection rate of lung cancer, we have introduced low-dose CT and CR technique into a population-based annual mass screening. From December 1999, 3868 and 12618 individuals participated in this screening program with CT and with CR, respectively. Primary lung cancer was detected in 15 (0.39%) by CT and 8 (0.06%) by CR. This results show high detection rate of primary lung cancer as had been previously reported. (author)
The major distributor and retailer of electrical power to Auckland, New Zealand, is Mercury Energy Limited. Following the sequential failure of the four 110kV underground cables, two gas-filled and two oil-filled, which supply the central business district, power was interrupted for 29 days from the 20th February 1998. A government inquiry was instituted, to examine what happened, why, and what lessons could be drawn for the future. Inadequacies in Mercury Energy`s cable maintenance and operating procedures were identified. The findings of the inquiry and its recommendations are reported. (UK)
Decision making about possible investment options for energy supply technology is usually based on economic criteria reflecting primarily the unit cost of energy and the return on capital invested. This study attempts to reverse the process. The chosen starting point is a UK investment programme geared towards reliance on conservation, renewable energy systems and the more efficient use of our remaining fossil fuels (through combined heat and power and district heating systems). The number and type of jobs likely to be created is then estimated and compared with the jobs likely to be created by the currently proposed nuclear power programme. (author).
Air pollution abatement measures are being intensified at the moment: Power plants and district heating systems are being retrofitted with high-efficiency desulphurisation and NO/sub 2/ reduction systems, the 3rd amendment of the Clean Air Technical Guide sets more rigid emission limits, and unleaded petrol and catalysts will significantly reduce car exhaust emissions. The author presents pollutant balances from 1966 to 1982 to contradict the popular notion that pollutant emitters formerly failed to take preventive measures.
Homestake Ore from the Ambrosia Lake District of New Mexico was treated in the Alkaline Leach-- Filtration Pilot Plant at Grand Junction, Colorado. Detailed information on grinding, leaching, flltration, and precipitation in connection with the processing of this ore is given. Autoclave leaching and continuous yellow cake precipitation were employed. The circuit liquors contnined organic material that was detrimental to clariflcation and precipitation and the results show that ihe ore was amenable to the Alkaline Leach--Filtration process only if a special additive was used. (auth)
The Washington Department of Fish and Wildlife (WDFW) has been contracted through the Bonneville Power Administration (BPA) and the Grant County Public Utility District (GCPUD) to perform an evaluation of juvenile fall chinook salmon (Oncorhynchus tshawytscha) stranding on the Hanford Reach of the Columbia River. The evaluation, in the fifth year of a multi-year study, has been developed to assess the impacts of water fluctuations from Priest Rapids Dam on rearing juvenile fall chinook salmon, other fishes, and benthic macroinvertebrates of the Hanford Reach. This document provides the results of the 2001 field season.
The Washington Department of Fish and Wildlife (WDFW) has been contracted through the Bonneville Power Administration (BPA) and the Grant County Public Utility District (GCPUD) to perform an evaluation of juvenile fall chinook salmon (Oncorhynchus tshawytscha) stranding on the Hanford Reach. The evaluation, in the fourth year of a multi-year study, has been developed to assess the impacts of water fluctuations from Priest Rapids Dam on rearing juvenile fall chinook salmon, other fishes, and benthic macroinvertebrates of the Hanford Reach. This document provides the results of the 2000 field season.
The Washington Department of Fish and Wildlife (WDFW) has been contracted through the Bonneville Power Administration (BPA) and the Grant County Public Utility District (GCPUD) to perform an evaluation of juvenile fall chinook salmon (Oncorhynchus tshawytscha) stranding on the Hanford Reach. The evaluation, in the third year of a multi-year study, has been developed to assess the impacts of water fluctuations from Priest Rapids Dam on rearing juvenile fall chinook salmon, other fishes, and benthic macroinvertebrates of the Hanford Reach. This document provides the results of the 1999 field season.
The Washington Department of Fish and Wildlife (WDFW) has been contracted through the Bonneville Power Administration (BPA) and the Grant County Public Utility District (GCPUD) to perform an evaluation of juvenile fall chinook salmon (Oncorhynchus tshawytscha) stranding on the Hanford Reach. The evaluation, in the second year of a multi-year study, has been developed to assess the impacts of water fluctuations from Priest Rapids Dam on rearing juvenile fall chinook salmon, other fish species, and benthic macroinvertebrates of the Hanford Reach. This document provides the results of the 1998 field season.
The composition, rank, coal facies, and coal pore structure characteristics of 15 coal samples were investigated systemically using methods of lithotype analysis, maceral analysis, proximate analysis, mercury porosimetry analysis, and nitrogen adsorption analysis. These samples were directly collected from the working faces of No.4, 8, 9 seams in Liulin district, eastern margin Ordos Basin, China. Four types of paleoenvironment including a wet forest swamp, an intergradation forest swamp, a drained forest swamp, and a fresh-water peat swamp were distinguished by lithotype and merceral analysis. An R-cluster analysis was performed to demonstrate the correlations between the coal facies and the pore structures. The results showed that coal rank is the primary factor affecting the development of micropores and transition pores, whereas coal facies control the development of seepage pores in similar coalification conditions, especially in a local ...
Petropavlovsk-Kamchatky (P-K) city in Kamchatka, Russia is operating hot-water district heating using heavy oil boilers and waste hot water of thermal power plants as heat sources. Feasibility study was made on district heating using natural geothermal hot water and/or geothermal heat pump systems as heat sources of hot water supply for reduction of greenhouse effect gas emission. Among 3 areas including geothermal hot water, use of hot water in K area was impossible because of lower temperature and less spring water. Use of hot water in P and UP areas was impossible as primary hot water because of temperature drop to 64 degrees C during hot water supply toward P-K city. The building heating operation test was carried out using the geothermal heat pump system installed in a newly drilled heat exchange well of 100m deep. As a result, sufficient heat recovery was achieved for heating. If all of 49 boiler houses for heating are replaced with such ...
The Lincoln Public School District, in Lincoln, Nebraska, recently installed vertical-bore geothermal heat pump systems in four, new, elementary schools. Because the district has consistent maintenance records and procedures, it was possible to study repair, service and corrective maintenance requests for 20 schools in the district. Each school studied provides cooling to over 70% of its total floor area and uses one of the following heating and cooling systems: vertical-bore geothermal heat pumps (GHPs), air-cooled chiller with gas-fired hot water boiler (ACUGHWB), water-cooled chiller with gas-fired hot water boiler (WCCYGHWB), or water-cooled chiller with gas-fired steam boiler (WCUGSB). Preventative maintenance and capital renewal activities were not included in the available database. GHP schools reported average total costs at 2.13 cents/ft{sup 2}-yr, followed by ACC/GHWB schools at 2.88 cents/ft{sup 2}-yr, WCC/GSB ...
Seismic records, combined with dredged samples and a core, indicate that the Spratly Islands of the Dangerous Ground Province are constructed of presently active carbonate build-ups, known to extend back continuously at least to the Pleistocene and presumed to have initiated in the Miocene, most likely upon the crests of sea-floor cuestas that trend north-east-south-west parallel to the sea-floor spreading magnetic anomalies of the contiguous abyssal plain of the southern part of the South China Sea. The cuestas range from spectacular to subdued, constructed of Triassic and Cretaceous strata and no older rocks have been identified from dredges. The cuesta axes plunge towards the south-west away from the islands, suggesting that the reefs began colonising their more elevated parts, but the ...
The European Commission recently authorized the import of baobab (Adansonia digitata L.) fruit pulp as a novel food. In rural West Africa the multipurpose baobab is used extensively for subsistence. Three hundred traditional uses of the baobab were documented in Benin, Mali, and Senegal across 11 ethnic groups and 4 agroecological zones. Baobab fruits and leaves are consumed throughout the year. The export of baobab fruits could negatively influence livelihoods, including reduced nutritional intake, change of power relations, and access rights. Capacity building and certification could encourage a sustainable and ethical trade of baobab fruits without neglecting baobab use in subsistence.
Differentiation of the vertebrate communities almost coincides with the differentiation of ecosystems in vegetation at the type level, as judged by formalized classifications of various blocks of ecosystems of West Siberia by geobotanical map units, and it differs significantly from that in the underground component due to the greater effect of waterlogging on the latter. In invertebrate communities, significant differences are observed in the boreal-subboreal part, where waterlogging is more significant and greater similarity is found among middle and southern-taiga communities than among subtaiga-steppe ones. Over the groups of map units, the heterogeneity of the vertebrate communities differs from that in all the examined blocks of ecosystems in greater differentiation in the tundra zon...
An industrial design of turbodrill with oil-filled gear reducer has been made and has passed comprehensive field tests. In its energy characteristics, durability and operating properties, it is acceptable for broad introduction into drilling practice. In all regions of drilling, the use of the reducer increases the drilling per drill bit, and with sufficient depth, the run velocity of drilling. In certain regions (for example, West Siberia) it is possible to increase the mechanical velocity by high torque at the reducer outlet. The inter-repair service life of the oil-filled reducers for West Siberia and Tatariya exceeds on the average 100 hours. For wells with high face temperatures (over 1502)C) it reaches 42.6 hours. Further increase in the service life is associated with an increase in the thermoresistance, primarily, of the lubricator assembly. The design of the oil-filled reducer makes it possible to repair it in the existing turbine ...
The Argyle pipe occurring in the East Kimberley Province of Western Australia is a unique, highly-diamondiferous lamproite. Although it resembles other lamproites located in the West Kimberley Province with respect to its setting, structure, petrography and geochemistry, it is probably Proterozoic in age and hence substantially older than Tertiary occurrences of the West Kimberley Province. Rb-Sr measurements on whole rock and phlogopite samples from magmatic olivine-phlogopite lamproite, reveals a two point model age of 1126 +- 9 Ma for the Argyle pipe. This age is consistent with ages of other, similar volcanic igneous rocks occurring in several localities worldwide. The widespread occurrence of Proterozoic kimberlites and lamproites suggests that this was an important period of worldwide alkalic intrusive activity.
Brazil occupies a prominence place in the development and use of sources renovate of energy, due to its great territorial extension, climate and several alternatives. One of these it is the bio diesel,o production which can substitute the oil diesel, decreasing the impacts to the environment. In the productive chain of chicken meat a residue, chicken oil, is generated with potential for biodiesel production. In this work they were certain characteristics physical chemistries, that can influence in the reactions of transesterification of the chicken oil. It was lifted up the potential of production of chicken oil in the cooperatives of the area west of the state of Parana and yield in biodiesel. The bio diesel production by cooperatives could be of 19.525.209,0 kg/year of bio diesel and the yield of 95%. (author)
In the present study we quantified the residues of organophosphorus (e.g. ethion and chlorpyrifos), organochlorine (e.g. heptachlor, dicofol, ?-endosulfan, ?-endosulfan, endosulfan sulfate) and synthetic pyrethroid (e.g. cypermethrin and deltamethrin) pesticides in made tea, fresh tea leaves, soils and water bodies from selected tea gardens in the Dooars and Hill regions of West Bengal, India during April and November, 2006. The organophosphorus (OP) pesticide residues were detected in 100% substrate samples of made tea, fresh tea leaves and soil in the Dooars region. In the Hill region, 20% to 40% of the substrate samples contained residues of organophosphorus (OP) pesticides. The organochlorine (OC) pesticide residues were detected in 33% to 100% of the substrate samples, excluding the w...
The primary objective of this study is to assess the oil and gas potential of the West Siberian Basin of Russia. The study does not analyze the costs or technology necessary to achieve the estimates of the ultimate recoverable oil and gas. This study uses reservoir data to estimate recoverable oil and gas quantities which were aggregated to the field level. Field totals were summed to a basin total for discovered fields. An estimate of undiscovered oil and gas, from work of the US Geological Survey (USGS), was added to give a total basin resource volume. Recent production decline points out Russia`s need to continue development of its discovered recoverable oil and gas. Continued exploration is required to discover additional oil and gas that remains undiscovered in the basin.
The history of the North German Mission Society (established 1836 in Hamburg) and its activity on the West African coast (from 1847 onwards among the Ewe, in what is now Ghana and Togo where it was and still is known as the 'Bremen Mission') mirrors neatly the various phases of the idea of 'mission': its composite motivation (Enlightenment, humanism and Pietism); the rejection of a narrow denominationalism (though the management of the mission was from 1850 onwards in the hands of the society's Bremen branch which belonged to the Reformed tradition); the entanglement of mission and overseas trade; the ambivalent attitude towards imperialism; the shaping of the missionary process as a profoundly educational one; the growing independence of the African church when the German missionaries wer...
We have analyzed data obtained with the Deep River neutron monitor and the underground vertical muon telescope at Embudo for the period 1965--79. Our data in conjunction with other published data show that for 1957--70 the diurnal anisotropy is unidirectional; with direction along 18 hour LT (east-west). During 1971--79, the diurnal anisotropy consists of two components. One is in east-west direction and the other is the radial component, with direction along 12 hour LT. The latter attains a maximum amplitude in 1976. We find no evidence for the existence of the twenty year wave in the diurnal anisotropy of cosmic rays. copyright American Geophysical Union 1988
This paper summarizes the IHY and BSS activities in West Asia and their importance in many Arab countries, such as Algeria, Egypt, Iraq, Jordan, Kuwait, Qatar, Saudi Arabia, UAE, etc. BSS future plans for some of these countries are as follows: It is proposed by the astronomers from the Arabian Gulf Region to build the Gulf Observatory on top of Jabal Shams (2980 msl) which will have a 2-3 m optical telescope. Libya signed a contract with a French company for building an observatory which will have a 2-m optical robotic telescope. It is also proposed to rebuild the Iraqi National Astronomical Observatory (INAO) which was destroyed during the two wars. It is planned to build a 5-6 m optical telescope and a small solar telescope on the top of Korek mountain, which has excellent observing conditions.
In this paper we show that the recent model by Gilles Duranton [Duranton, G., 2007. Urban evolutions: The fast, the slow, and the still. American Economic Review 97, 197-221] performs remarkably well in replicating the city size distribution of West Germany, much better than the simple rank-size rule known as Zipfs law. The main mechanism of this theoretical framework is the "churning" of industries across cities. Little is known in urban economics about the determinants of local industry turnover so far. We present an empirical analysis of the excess churning index for West German cities, which describes the strength of intra-city industry reallocations over time. We find that urban growth and industry turnover are not notably correlated: Some, but not all fast-growing cities have notably...
Objective:- To review the rate of inadvertent cystotomy during laparoscopic hysterectomy performed by the Sydney West Advanced Pelvic Surgery Unit (SWAPS). To compare this rate with other published data. To identify the risk factors for bladder injury at laparoscopic hysterectomy and to review the management and outcome following such injury. Method:- This was a retrospective observational study. All hysterectomies where the SWAPS clinical fellow was involved were included. The study period was from January 2001 to June 2009. Simple statistical formulae were used to analyse data in this study. Results:- There were 1223 hysterectomies performed during this period. Eighty-one percent of these were performed laparoscopically. There were 14 (1.1%) bladder injuries reported during this period. ...
Regular fuel reduction burning is an important management strategy for reducing the scale and intensity of wildfires in south-west Australian native forests, but the long term effects of this on tree and stand growth are not well understood. Five fire treatments, including application of frequent and infrequent low intensity burns, and 25?years of fire exclusion, were applied to small (4?ha) experimental plots in a low rainfall mixed jarrah (Eucalyptus marginata) and marri (Corymbia calophylla) forest to investigate the effects of these treatments on tree stem diameter growth, stand basal area increment and tree mortality. Mean tree stem growth measured over 20?years was lowest in the long unburnt treatment compared with the burn treatments, although surface soil nutrient levels were gener...
Geothermal energy appears as a viable economic alternative among the different renewable energy sources. The French bureau of geological and mining researches (BRGM) is involved in several research and development programs in the domain of geothermal energy and underground reservoirs. This document presents the content of 5 programs: the deep hot dry rock system of Soultz-sous-Forets (construction and testing of the scientific pilot, modeling of the reservoir structure), the development of low and high enthalpy geothermal energy in the French West Indies, the comparison of the geothermal development success of Bouillante (Guadeloupe, French West Indies) with the check of the geothermal development of Nyssiros (Greece) and Pantelleria (Italy), the development of the high enthalpy geothermal potentialities of Reunion Island, and the underground storage of CO{sub 2} emissions in geologic formations (deep aquifers, geothermal reservoirs, abandoned ...
The tide field at the time of liquid effluent discharging from Daya Bay nuclear power station, and the average water speed at the monitoring points in west Daya Bay from the time of discharging to the time of sampling were calculated by ADI (Alternating Direction Implicit) method. By comparing analysis, the difference of "3H diffusion between spring tide and neap tide (the expansion of "3H within one day of spring tide is greater than that within one day of neap tide) was found. So, an equivalent diffusion time is introduced to modify the original model, and a better attenuation relation between the average "3He concentration in west Daya Bay and the time since the liquid "3H discharging is obtained. (authors)
The environmental impact caused by local people (ecological footprint of consumption, EFc) and the actual environmental impact that the ecosystem burdens (ecological footprint of production, EFp) in West Jilin Province, Northeast China from 1986 to 2006 were evaluated by using ecological footprint (EF) method. And the major driving forces of EFc and EFp were analyzed by STIRPAT model. Both EFc and EFp showed increasing trends in 1986?2006, accompanied by decreasing ecological deficits but expanding ecological overshoots. Population (P), GDP per capita (A 1), quadratic term of GDP per capita (A 2), urbanization (T a1), and quadratic term of urbanization (T a2) were important influencing factors of EFc, among which T a2 and T a1 were the most dominate driving forces of EFc. A 1, A 2 and T a2...
[sup 203]Pb-chloride is a promising imaging agent for tumour scanning because of the large retention value for tumour tissue and the small value for normal organs, but the large value for the kidneys and bone is a shortcoming. The retention value of [sup 203]Pb in tumour tissue is larger than that of [sup 201]Tl and smaller than that of [sup 67]Ga. The tumour/inflammatory lesion retention ratio for [sup 203]Pb is very large in comparison with those for [sup 67]Ga and [sup 201]Tl. [sup 203]Pb accumulates to a large extent in viable tumour tissue, and less in necrotic tumour tissue and in inflammatory lesion. (author).
In previous work, on cooling from 300 K to 10 K the elastic moduli for both #alpha#- and #delta#-Pu dropped 30%. This large change may reflect effects of 5f-electron localization. In this work, the elastic moduli at ambient temperature of several Pu-Ga alloys were measured using resonant ultrasound spectroscopy (RUS). The strong temperature dependence of the bulk and shear modulus and the temperature independence of Poisson's ratio was confirmed and the upper temperature limit for #alpha#-Pu was extended to 360 K. Measurements of the time dependence of the shear moduli of Pu and Pu-2.36 at.% Ga were determined with high precision as a function of time and temperature. Using a model for time dependence of point defects, we determined the exponential time constant at ambient temperature for such variations. The low temperature results are consistent with Fluss .
The influence of 3d-transition metal impurities on the superconducting properties of the A-15 compounds V_3Si and V_3Ga have been investigated. In the case of V_3Si, the Fe impurities replacing V were found to have a local moment. A compensation effect was found in this case, resulting in a 20KOe increase in the upper critical field at dilute concentrations of Fe. It was demonstrated that long range order V_3Ga possessed higher transition temperature and upper critical field than found hitherto. Investigations on Nb_3Ge/sub 1-x/Ga/sub x/ films obtained by chemical vapor deposition has clearly shown the relation between the transition temperature and structural characteristics. The influence of generalized defects on the superconducting properties in A-15 type Nb_3X compounds has been discussed.
We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence '' hot '' implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900"oC up to 20-90 nm in those annealed at 1100"oC. For the samples annealed at 900"oC a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed. (author)
Low energy (<100 eV) Ar"+ ion bombardment of the growing film during the deposition of amorphous GaSb+Ge mixtures was found to affect both the transformation rate kinetics as well as the reaction path during subsequent annealing. Ion bombardment induced collisional cascades resulted in more random mixing in the growing films thus retarding the rate of the amorphous to equilibrium state phase transformation during annealing and allowing the formation of homogeneous metastable randomly oriented single phase (GaSb)/sub 1-x/Ge/sub x/ alloys. The films were approx.1.5 #mu#m thick and the average grain size in the metastable state was approx.300 A.
Homogenous Al{sub x}Ga{sub 1{minus}x}P liquid phase epitaxial layers have been obtained with the temperature difference method under controlled vapor pressure (TDM-CVP). Very clear fine structures near band edge in photoluminescence spectra have been observed at 77 K for the first time. Photoluminescence measurement results confirmed that the free exciton recombination without phonon assistance plays an important role in the luminescence at 77 K and becomes dominant at room temperature. It is considered that Zero-phonon assisted free exciton recombination is intensified by some local perturbations to electrical potentials against carriers or excitons introduced by Al atoms in Al{sub x}Ga{sub 1{minus}x}P layers, which can give momentum change necessary for recombination.
Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.
The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society
The strongly localized one-electron (D{sup 0}) and two-electron (D{sup -}) donor states are considered with the lattice deformation around the donor center taken into account. For GaAs, donor energy levels have been calculated as functions of the hydrostatic pressure. The calculated energy positions and pressure coefficients agree with the experimental data. It is shown that the interaction with phonons reduces the probability of radiative transitions between the states of different localization and leads to the metastability of shallow-level donor states with respect to the D{sup -} state in GaAs and both the states (D{sup 0} and D{sup -}) in CdF{sub 2}. (author) 7 refs, 1 fig
Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.
In this paper, a Kramers-Kronig (KK) analysis of infrared (IR) reflectance spectrum of quaternary In_0_._0_1Al_0_._0_6Ga_0_._9_3N film grown by molecular beam epitaxy (MBE) is reported. The infrared measurement is performed in the reflection mode at an incident angle of 15 degree sign by Fourier transform infrared (FTIR) spectroscopy at T = 300 K. The Kramers-Kronig analysis of the reflectivity data has been used to obtain the real and imaginary parts of the index of refraction (n and k), and the real and imaginary parts of the dielectric response function (#epsilon#' and #epsilon#') of the materials. Finally, the transverse optical and longitudinal optical phonons for quaternary In_xAl_yGa_1_-_x_-_yN were obtained.
Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.
Computer simulations of two-junction, concentrator tandem solar cell performance show that IR-sensitive bottom cells are required to achieve high efficiencies. Based on this conclusion, two novel concentrator tandem designs are under investigations: (1) a mechanically stacked, four-terminal GaAs/GaInAsP (0.95 eV) tandem, and (2) a monolithic, lattice-matched, three-terminal InP/GaInAs tandem. In preliminary experiments, terrestrial concentrator efficiencies exceeding 30% have been achieved with each of the above tandem designs. Methods for improving the efficiency of each tandem type are discussed. (orig.).
AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow rid structures were 300 A/cm{sup 2} and 330 A/cm{sup 2} for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87--89% and the internal losses of 7--10 cm{sup {minus}1} were obtained.
Nanocrystalline powders of GaN with grain sizes ranging from 2 to 30 nm were examined under high external pressures by in situ diffraction techniques in a diamond anvil cell at DESY (HASYLAB, Station F3). The experiments on densification of pure powders under high pressure were performed without a pressure medium. The mechanism of generation and relaxation of internal strains and their distribution in nanoparticles was deduced from Bragg reflections recorded in situ under high pressures at room temperature. The microstrain was calculated from the full-width at half-maximum (FWHM) values of the Bragg lines. It was found that microstrains in GaN crystallites are generated and subsequently relaxed by two mechanisms: generation of stacking faults and change of the size and shape of the grains occurring under external stress. (author)
This paper proposes the use of particle swarm optimization method (PSO) for finite element (FE) model updating. The PSO method is compared to the existing methods that use simulated annealing (SA) or genetic algorithms (GA) for FE model for model updating. The proposed method is tested on an unsymmetrical H-shaped structure. It is observed that the proposed method gives updated natural frequencies the most accurate and followed by those given by an updated model that was obtained using the GA and a full FE model. It is also observed that the proposed method gives updated mode shapes that are best correlated to the measured ones, followed by those given by an updated model that was obtained using the SA and a full FE model. Furthermore, it is observed that the PSO achieves this accuracy at a computational speed that is faster than that by the GA and a full FE model which is faster than the SA and a full FE model.
The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).
This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).
A 5 GHz GaAs monolithic astable multivibrator-type voltage-controlled oscillator has been developed. The monolithic oscillator uses 2 micron long self-aligned TiW-silicide gate MESFETs as well as GaAs Schottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X-band oscillation frequency can be obtained with 1 micron long gate FET and low loss resonance inductors.
Yellow-emitting pulsed laser operation of an Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P/Al/sub 0.16/Ga/sub 0.36/In/sub 0.48/P/ Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm/sup 2/ for a diode with a Si/sub 3/N/sub 4/ insulated 8-..mu..m-wide and 250-..mu..m-long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.
AlGaInP epitaxial layers grown at 690 {degree}C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the {l brace}111{r brace} directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, finally, ...
AlGaInP epitaxial layers grown at 690 degree C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the #left brace#111#right brace# directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, ...
III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on ...
The electronic band structure, transport properties, and lattice dynamics in AuX_2 (X = Al, Ga and In) under high pressure have been extensively studied with full potential linearized augmented plane wave and pseudopotential plane wave methods. The theoretical results for the electronic band structure and Fermi surface reveal pressure-induced electronic topological transitions (ETTs) in AuGa_2 and AuIn_2, while they are absent in AuAl_2, in excellent agreement with the experimental observations. Moreover, calculations of the transport properties at different pressures reveal subtle changes in the band structure close to the Fermi surface of the three intermetallic compounds. It is clear that the anomalies in transport properties are due to ETTs. Interestingly, a pressure-induced soft transverse acoustic (TA) phonon mode is identified only in AuGa_2. The TA phonon instability at the Brillouin zone boundary L point might be ...
SummaryIn the classic example of the McGurk effect, when subjects see a speaker say /ga/ and hear a simultaneous /ba/, they typically perceive /da/, a syllable that was not presented...Full Text Available
The temperature dependence of T/sub 1/ spin-lattice relaxation time on /sup 51/V, /sup 69/Ga, /sup 71/Ga and Knight shift on /sup 51/V and /sup 29/Si nuclei in polycrystalline V/sub 3/Si, V/sub 3/Ga, V/sub 3/Ge and in the monocrystal V/sub 3/Si in normal state is investigated. For V/sub 3/Si and V/sub 3/Ga a rapid growth (T/sub 1/T)/sup -1/ is observed with temperature decrease while for V/sub 3/Ge the maximum (T/sub 1/T)/sup -1/ at T approximately equal to 60 K has been found. The temperature dependence peculiarities have been discussed on the basis of theoretical models available and zone structure calculations for A-15 compounds. The T/sub 1/ anisotropy and possibility of its experimental discovery are considered. Anisotropic contribution in (T/sub 1/T)/sup -1/ and contributions of d states of different symmetries into the electron state density at the Fermi level are estimated for V/sub 3/Si from ...
The temperature dependence of T_1 spin-lattice relaxation time on "5"1V, "6"9Ga, "7"1Ga and Knight shift on "5"1V and "2"9Si nuclei in polycrystalline V_3Si, V_3Ga, V_3Ge and in the monocrystal V_3Si in normal state is investigated. For V_3Si and V_3Ga a rapid growth (T_1T)"-"1 is observed with temperature decrease while for V_3Ge the maximum (T_1T)"-"1 at T approximately equal to 60 K has been found. The temperature dependence peculiarities have been discussed on the basis of theoretical models available and zone structure calculations for A-15 compounds. The T_1 anisotropy and possibility of its experimental discovery are considered. Anisotropic contribution in (T_1T)"-"1 and contributions of d states of different symmetries into the electron state density at the Fermi level are estimated for V_3Si from T_1 measurements.
A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the extended defects and on ...
Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In/sub 1-//sub y/(Al/sub x/Ga/sub 1-//sub x/)/sub y/P-In/sub 1-//sub y/ (Al/sub x/Ga/sub 1-//sub x/)/sub y/P quantum well heterostructures grown lattice matched (yapprox. =0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (J/sub th/approx.10/sup 4/ A/cm/sup 2/, 625 nm) of diodes fabricated from the same crystal is described.
Genetic algorithms (GA) were used to develop specific copper metal-ligand force field parameters for the MM3 force field, from a combination of crystallographic structures and ab initio...Full Text Available
Superconducting Cu-rich composites containing the A-15 compounds V_3Si or V_3Ga were made by the ''Tsuei'' process (melting into ingots followed by cold working and heat treatment). Superconducting transition temperatures of the composites were measured. X-ray diffraction analyses were performed. Microstructures were studied using both the optical metallograph and the scanning electron microscope. For some composites containing V_3Ga, the critical current densities as functions of transverse magnetic field up to 60 kG, and as functions of temperature from 4.2 to 12"0K were measured. It was found that the Tsuei process does not work for the composites containing V_3Si, but works satisfactorily for V_3Ga; reasons are discussed. Relations between measured properties and various metallurgical factors such as alloy compositions, cross-section reduction ratios, and heat treatment are discussed. The mechanism for the observed ...
We report the growth and fabrication of midwave infrared InAs/GaSb strain layer superlattice (SLS) detectors. Growth of alternate interfaces leads to a reduced strain between the GaSb buffer and SLS ({delta}a{sub parallel}/a=-5x10{sup -4}), enabling the growth of active regions up to 3 {mu}m (625 periods). The structural, optical, and electrical properties of the active region were characterized using x-ray crystallography and photoluminescence, respectively. p-i-n detectors were grown using 625 periods of 8 ML (monolayer) InAs/8 ML GaSb as the active region. The {lambda}{sub cutoff} for the detectors was 4.6 {mu}m with a conversion efficiency of 32% at V{sub b}=-0.2 V. Detectivity was obtained using noise power spectral density measurements under 300 K 2{pi} field of view illumination and was equal to 5.2x10{sup 10} and 3x10{sup 10} cm Hz{sup 1/2}/W (V{sub b}=-0.02 V, T=80 K) in the white noise and 1/f noise limit (at 50 ...
Liquid metal ion sources (LMISs) with Ga as ion species are widely used in focused ion beam (FIB) technology for micromachining and surface treatment on the sub-micron and nano-scale. Key features of a LMIS for investigating mechanical properties and 3D-microfabrication of materials are long life-time, high brightness, stable ion current and a highly effective milling ability for the material to be modified. In order to increase the material removal rate, heavier ions than Ga and their clusters should be applied. Bismuth (Bi) is the heaviest, non-radio-active element in the periodic table, is non-toxic and exhibits a low melting point. We have thus produced a long-life (about 1000 h) Bi LMIS with a good beam performance, applicable in any FIB system. Since Bi is the only element in this source, it is not necessary to separate it from other ions by a mass filter. Investigation of the sputtering rate of NiTi shape memory alloys using ...
A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction ...
GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup 2}-area GaAs cell on ...
A high power AlGaInP single quantum well graded index separate confinement heterostructure. It comprises a substrate and a multiplicity of layers deposited thereon comprising a single Ga{sub x}In{sub x}P quantum well where x has a value from about 0.4 to about 0.6; multiple graded index regions on both sides of the quantum well and cladding layers adjacent to each graded region of the well, the graded region comprising Al{sub y}(Ga{sub 1{minus}y}){sub 0.5}In{sub 0.5}P quaternary alloy; wherein the value of y in the graded region varies from about 0.2 at the quantum well/graded region interface to up to about 0.6 for the cladding layers/graded index regions; the heterostructure having a low broad area threshold current with pulsed thresholds in the range from about 1 to about 2 Amps/cm{sup 2} and a differential efficiency of from about 20 to about 60 percent.
Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with ...
This study focuses the granitoids of center-southern portion of Guyana Shield, southeastern Roraima, Brazil. The region is characterized by two tectonic-stratigraphic domains, named as Central Guyana (GCD) and Uatuma-Anaua (UAD) and located probably in the limits of geochronological provinces (e.g. Ventuari-Tapajos or Tapajos-Parima, Central Amazonian and Maroni-Itacaiunas or Transamazon). The aim this doctoral thesis is to provide new petrological and lithostratigraphic constraints on the granitoid rocks and contribute to a better understanding of the origin and geo dynamic evolution of Guyana Shield. The GCD is only locally studied near to the UAD boundary, and new geological data and two single zircon Pb-evaporation ages in mylonitic biotite granodiorite (1.89 Ga) and foliated hastingsite-biotite granite (1.72 Ga) are presented. These ages of the protholiths contrast with the lithostratigraphic picture in the other areas of Cd (1.96-1.93 ...
The following work deals with the realization, characterization and modeling of GaInP / AlGaInP high power semiconductor laser diodes in the visible wavelength range. In addition to the exploration and optimization of efficiency, temperature stability and maximum output power of multi-mode lasers especially methods for longitudinal and lateral mode stabilization of high power laser diodes have been investigated. Although often the focus of optimization is on the threshold current density, in this work the performance of the laser diode for an operation point around 1 Watt under continous wave operation is regarded as the figure of merit. It turns out that low carrier densities are key for an efficient reduction of the heterobarrier leakage currents. In addition, large optical cavity structures with low internal losses enable high external quantum efficiencies even for long cavities. Finally high laser effiency as well as an efficient cooling ...
Direct coupljng between Al and Au metal]jzations can result in an increase in gate resistance due to a metallurgical reaction. (purple plague). An RF life test on ...
Excitonic transitions in metalorganic vapor phase epitaxially grown In_xGa_1_-_xP/In_0_._4_8(Al_0_._7Ga_0_._3)_0_._5_2P strained single quantum-well structures are characterized using low-temperature photoluminescence and photoluminescence excitation (PLE) spectroscopies. The structures consist of several uncoupled quantum wells with thicknesses between 1.2 and 11.3 nm, and compositions x of 0.48 (nominally lattice matched) and 0.56 (#approx#0.6% biaxial compressive strain). The photoluminescence spectra exhibit intense peaks over the wavelength range 550--650 nm, with linewidths between 7 and 23 meV depending on the well thickness. The PLE spectra reveal strong heavy-hole and light-hole transitions, as well as higher-order (n=2) transitions in the thicker wells. The heavy-hole/light-hole splitting shows little dependence on well thickness in the strained structures, indicating a relatively large conduction band offset of ...
Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.
Near-ideal Schottky barrier contacts to n-type Al0.22Ga0.78N have been developed by a two-step surface treatment technique. Plasma etching of the AlxGa1-xN surface prior to Schottky metal deposition, combined with sequential chemical treatment of the etched surface, holds promise for developing high quality low-leakage Schottky contacts for low noise applications and for recessed gate high electron mobility transistors. In this work, the effect of postetch chemical treatment of the n-type Al0.22Ga0.78N surface on the performance of the Ni/Au based Schottky contact has been investigated. Three different types of chemical treatment: viz, reactive ion etching, reactive ion etching plus dipping in hot aqua regia, and reactive ion etching plus dipping in hot KOH, are studied. Detailed current-voltage studies of three different surface treated diodes and a comparison with as-deposited diodes reveal significant improvement in the ...
Samples prepared using the focused ion beam (FIB) inevitably contain the surface damage induced by energetic Ga"+ ions. An effective method of removing the surface damage is demonstrated using a plasma cleaner, a device which is widely used to minimize the surface contamination in scanning transmission electron microscopy (STEM). Surface bombardment with low-energy Ar"+ ions was induced by biasing the sample immersed in the plasma source, so as to etch off the surface materials. The etch rates of SiO_2, measured with a bias voltage of 100-300 V, were found to vary linearly with both the time and bias and were able to be controlled from 1.4 to 9 nm/min. The removal of the Ga residue was confirmed using energy dispersive spectroscopy (EDS) after the plasma processing of the FIB-prepared sample. When the FIB-prepared sample was processed via plasma etching for 10 min with a bias of 150 V, the surface Ga damage was completely ...
We have investigated the correlation between V-shaped defect formation and the optical properties of AlGaN/(In)GaN multiple quantum wells (MQWs) grown under different growth conditions and then demonstrated the characteristics of fabricated ultraviolet (UV) light emitting diodes (LEDs). From the temperature-dependent photoluminescence (PL) measurement, the internal quantum efficiency for 300 K was obtained as 43.6% for a sample with a low density of V-defects in a MQW and 13.7% for a sample with a high density of V-defects. The carrier lifetime based on the time resolved PL measurement at room temperature was 0.32 ns for a sample with a high density of V-defects and 1.26 ns for a sample with a low density of V-defects. And we also found that the density of V-defects affected the external quantum efficiency and wall plug efficiency of the fabricated UV LEDs. (fast track communication)
We report a study of the physical characteristics of the pillars of C, Pt and W grown by 10-30 keV Ga focused ion beam (FIB) as a function of Ga ion flux, and present a quantitative analysis of the elements using energy-dispersive analysis of X-rays (EDAX). All the FIB grown pillars exhibit a rough morphology with whisker like protrusions on the cylindrical surface and broadening of the base as compared to the nominal size. For a constant fluence, the height of the pillar initially increases and then reduces after going through a maximum as a function of ion flux in all the cases. The compositional analysis shows good metallic quality for Pt structures but reveals significant contamination of Ga in C and Ga and C in W structures at higher ion fluxes. Explanation to all these observations has been sought in the light of secondary ion and electron effects and the different processes involved which lead to ...
The localized Pt deposition on Si by 30 keV Ga"+ focused ion beam (FIB), 10 keV electron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be"2"+ microprobe with a beam spot size of 80 nm. The distribution of deposited Pt, Ga from the ion beam itself, and C from the precursor gas was obtained at and nearby the deposited areas by micro-RBS spectra and RBS mapping. All of the beam processed areas showed a uniform Pt distribution at the deposited areas. The amount of Pt atoms increased with the increase in ion or electron dose due to the decomposition of precursor gas. The thickness of Pt layer by EB is considerably less than that by FIB due to the reduced deposition rate. Ga atoms from the center of processed areas partly redeposited at and nearby the FIB processed areas within #approx#3 #mu#m. The Ga incorporation by dual beam processing was reduced ...
We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned ...
The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.
In this work, the effects of the focus ion beam (FIB) milling process on the optical properties of semiconductor nanostructures were investigated. With this aim, a sensitive materials system based on InGaAs/GaAs quantum dots with well known and excellent optical properties was selected for the FIB treatment. The FIB technique was used to locally remove a metallic mask deposited on top of the quantum dot sample. The photoluminescence (PL) signal, collected from the circular openings, was used to infer the possible damage effects of the ion beam on the properties of the dots.
In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).
A study was made on the effect of 3.5 MeV electron irradiation on the properties of light-emissive structure based on GaAlAs. It is shown that a considerable decrease in the emitted light intensity as a result of electron irradiation not accompanied by changes in recombination- and electric properties of the mentioned structures. It is established by the electron-microscopy and Auger-spectroscopy meazurements that electron irradiation causes the occurrence of regions of free aluminium clusters on the external surface of the structure n-layer. The number and the sizes of the regions depend on the electron doze. It was assumed that the mentioned regions can play a role of attenuation filter for the light emitted by the structure.
Using the slow electrons spectrometer one can get information on the surface structure, its element composition, chemical bonds, adsorption phenomena, electron state density and surface oscillation. We have developed the methods and created the apparatus that makes it possible to investigate the electron backscattering by solid surface. We have studied the electron scattering by the polycrystalline and monocrystalline. GaAs surface in the energy range of 0 to 9 eV. The FWHM of electron energy distribution function was 70 meV. (author).
The metal-semiconductor solar cell is a potential candidate for converting solar energy to electrical energy for space and terrestrial application. In this paper, a method for obtaining parameters of practical antireflection (AR) coatings for the metal-semiconductor solar cells is given. This method utilizes the measured equivalent index of refraction obtained from ellipsometry, since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculations of optical parameters for Ta/sub 2/O/sub 5/ AR coatings on Au-GaAs and Au-GaAs/sub 0.78/P/sub 0.22/ solar cells are presented for comparison. (AIP)
While bone metastases producing photon deficient defects on bone scintigraphy have previously been reported, this finding has not been emphasized for hepatocellular carcinoma (HCC). Furthermore, ''filling-in'' of such photon deficient defects with 67Ga at skeletal sites of metastatic HCC has not been described. In this case report, the combination of a photon deficient defect on bone scintigraphy and avid accumulation of 67Ga in this same area was of value in confirming the diagnosis of metastatic HCC.
Thirty-two patients with AIDS related complex (ARC) or acquired immunodeficiency syndrome (AIDS) underwent /sup 67/Ga scans as part of their evaluation. Three patterns of /sup 67/Ga biodistribution were found: lymph node uptake alone; diffuse pulmonary uptake; normal scan. Gallium-67 scans were useful in identifying clinically occult Pneumocystis carinii pneumonia in seven of 15 patients with ARC who were asymptomatic and had normal chest radiographs. Gallium scans are a useful ancillary procedure in the evaluation of patients with ARC or AIDS.
The A-15 compounds with the highest critical temperatures and critical fields are stable only at high temperatures and sometimes are not stable at any temperature. Fabrication of such materials thus necessarily involves the creation and manipulation of metastable phases. It follows that the bronze matrix technique now under development for Nb_3Sn- and V_3Ga-based composite superconductors is not suitable for high-T/sub c/ materials of the Nb_3 (Al, Ge, Ga, Si) family. Alternative technologies will be necessary for such materials. Efforts to develop suitable alternatives, using Nb_3Al, are described.
This thesis dealt with the metal-organic gas phase epitaxy with nitrogen as carrier gas. For this first by means of three-dimensional modelings of the epitaxy process the influence of the carrier gas on the processes was explained. The optimization of the growth parameter for the whole light-emitting-diode structure in double-hetero arrangement resulted that an a temperature of 770 C and a V/ III-ratio of 150 layers with a high crystal quality could be reached.
This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 ..mu..m and Al/sub 0.1/Ga/sub 0.9/P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.
With the development of an array of highly-segmented germanium detectors, it now becomes possible to perform in-flight #gamma#-ray spectroscopy experiments on intermediate energy beams with unprecedented #gamma#-ray energy resolution. Presented in this report are examples of two techniques in which SeGA, the most highly-segmented operational germanium array for in-flight spectroscopy with fast beams, was used for the detection of #gamma# rays. SeGA used in conjunction with a high-resolution magnetic spectrograph (S800) to detect the reaction residues in coincidence represents a powerful combination for in-beam #gamma#-ray studies.
High-power diode laser arrays emitting at 690 nm have been developed for solid-state laser pumping. The laser diode bars (fill factor [approx]0.7) have been fabricated from single quantum well AlGaInP-based heterostructures. Using silicon microchannel heatsinks, a record high 360 W/cm[sup 2] per emitting aperture is achieved under continuous wave operation.
The Gamma Physics (GaP) program of physical phenomena investigation is proposed on #gamma#p, #gamma#e and #gamma##gamma# colliders at TeV energies. The program contains specialized software (CompHEP system) created for automation of particle interaction processes calculations in the framework of various gauge models. Preliminary physical results are presented (heavy quark production, W, Z production, supersymmetry etc.), and further software development is suggested. (R.P.) 22 refs., 8 figs., 4 tabs.
The aim of this research is the design and implementation of a decentralized power system stabilizer (PSS) capable of performing well for a wide range of variations in system parameters and/or loading conditions. The framework of the design is based on Fuzzy Logic Control (FLC). In particular, the neuro-fuzzy control rules are derived from training three classical PSSs; each is tuned using GA so as to perform optimally at one operating point. The effectiveness and robustness of the designed stabilizer, after implementing it to the laboratory model, is investigated. The results of real-time implementation prove that the proposed PSS offers a superior performance in comparison with the conventional stabilizer. (author)
The method of aluminium metal activation by liquid eutectics Ga-In (70:30) and Ga-In-Sn-Zn (60:25:10:5) is developed. Subsequent dispersion of the obtained specimens up to a particle size of >0.5mm leads to the drastic interaction of aluminium powder and water with evolving hydrogen. In the present work the oxidation rate of activated aluminium and water is investigated depending on eutectic composition, reaction temperature, and powder particle size. The mechanism of the main eutectic's components influence on the reacting ability of aluminium is discussed. (author)
The authors propose using synthetic aperture radar(SAR) for wind energy mapping of coastal zones. The SAR equipment is located on the European Space Agency ERS-1 and 2 and the RADARSAT satellites. Examples of wind energy maps and evaluations of their applications are given for the Norwegian west coast.
This paper examines why ship shaped floating production storage and offloading (FPSO) systems have been selected for the first two developments on Foinaven and Schiehallion fields in West of Shetland operated by BP Exploration. An overview of the concepts considered for the deepwater harsh environment is made against the business objectives and reservoir conditions which are the primary drivers behind development concept selection. Discussion of technical issues for a range of concepts are held on schedule, construction, installation, safety, flexibility to production throughput, capital and operating costs.
A review is presented of the work being carried out around the world on the vitrification of high-level waste. A description is given of the French AVM process, West Germany's research on the Vera, Fips and Pamela processes and the United Kingdom Harvest process. Mention is also made of the Lotes process being developed by Belguim, and of the inactive vitrification plant in Italy, Ivet 1. (U.K.).
Computational transport models are described with applications in three problem areas related to unsaturated zone moisture movement beneath Area G. These studies may be used to support the ongoing maintenance of the site Performance Assessment. The three areas include: a 1-D transient analysis with average tuff hydraulic properties in the near surface region with computed results compared to field data; the influence on near surface transient moisture percolation due to realistic distributions in hydraulic properties derived statistically from the observed variance in the field data; and the west to east moisture flow in a 2-D steady geometry approximation of the Pajarito Plateau. Results indicate that a simple transient model for transport of moisture volume fraction fits field data well compared to a moisture pulse observed in the active disposal unit, pit 37. Using realistic infiltration boundary conditions for summer showers and for spring snow melt conditions, ...
This paper systematically introduces the supervision monitoring for radiation environment around the Guangdong Daya Bay and Ling Ao nuclear power station by the Guangdong Environmental Radiation Research and Monitoring Center. It includes the monitoring plan, methods, quality assurance, main results and conclusions. The results show that: (1) The gas discharge have not caused any detectable impacts to the terrestrial and atmospheric environment since their operation; (2) "1"1"0"mAg could only be detected in seawater in the West Daya Bay in 1995 and 1997 and in sediments in 1997. The maximum annual average in seawater was 3.1 Bq/m"3, annual average of "1"1"0"mAg in sediments was 1.0 Bq/kg(dry). But it was always detectable in pearl oyster, gulfweed and cuttlefish in the West Daya Bay. The "1"1"0"mAg concentrations in halobios were relatively higher in 1994, 1996 and 1997. The maximum concentrations in pearl oyster, gulfweed and cuttlefish were ...
The study required by the West German Ministry of Research and Technology (RS 605) for the Committee on 'Future Nuclear Energy Policy' of the 9th German Parliament is concerned with the following main points: 1) Assessment of technical risks from the social aspect; 2) Discussion of terms and quantification of risks; 3) 'Engineering judgment' and 'questionable' methods in the Fast Breeder analysis of the Society for Reactor Safety (GRS); 4) Assessment criteria of potential damage. (HP).
...as agro forestry subject matter specialist, eastern supervisor, conservation and GIS officer with the Ministry of Agriculture and WWF-Korup national park project, respectively, in south west Cameroon . Peter holds joint Honours BSc in Forestry & Soil Science (WALES-UK) and MSc Resource Management (Edinburgh-UK)....
... All rickettsial diseases respond to treatment with antibiotics such as doxycycline and tetracycline As of 10 May, the Government of South Africa has reported 186 confirmed cases of RVF in humans, including 18 deaths, in Free State Province, Eastern Cape Province, Northern Cape Province, Western Cape, and North West Province. RVF is a viral disease that primarily affects animals (such as cattle, buffalo, sheep, goats and camels). The disease can also affect humans. The main mode of transmission of RVF ...
...Butley river and Ore estuary, Boyton Marshes attracts breeding wading birds in spring and ducks, geese and swans in winter. It's also ... During spring and autumn, it is an ideal place to see migrant wading birds, gulls and terns. Insh Marshes Insh ... Spring is also an excellent time to visit. Leighton Moss Leighton Moss is the largest reedbed in north-west England, and home ... When they leave in spring, wading birds take centre stage. Watch it all take place from our viewing centre and hide,...
As part of The International Northern Sea Route Programme (INSROP), Subprogram III, Trade and Commercial Shipping, a study has been made concerning seaborne export of liquefied petroleum gas (LPG) from the Northern Russia, especially the West Siberian fields in Tyumen. The main purpose of the total project III.0703, part 2 and this study is to evaluate the economic viability of seaborne export from this area to the European region, mainly with the use of a special ice-strengthened LPG vessel, constructed and designed for such seaborne operations. This study concentrates on both seaborne LPG transportation, the demand and supply for seaborne LPG in the world and marine transportation of LPG from the West Siberian fields. Another purpose is to see which regions are potential exporters, importers and buyers of seaborne export of LPG from Tyumen. Currently large quantities of liquefied gas are flared off at the West Siberian ...
This paper reports a recent feasibility study of a scheme to transport thermal coal as a coal-water slurry by pipeline from Coalspur, Alberta to the west coast of Canada. The base case is for the transport of 10.2 million tons of coal annually, and an expanded case of 18.2 million tons is also considered. Coal would be drawn from 5 mines within a 16 km radius of Coalspur. Several different terminal layouts were considered.
The purpose of this interim remedial measures (IRM) proposed plan is to present and solicit public comments on the IRM planned for the 200-ZP-1 Operable Unit at the Hanford Site in Washington state. The 200-ZP-1 is one of two operable units that envelop the groundwater beneath the 200 West Area of the Hanford Site.
Real-time horizon sensing on continuous mining machines is becoming an industry tool. Installation and testing of production-grade Horizon Sensor (HS) systems continued this quarter at Monterey Coal Company (ExxonMobil), Mountain Coal Company West Elk Mine (Arch), and Ohio Valley Coal Company (OVC). Monitoring of system function, user experience, and mining benefits is ongoing. All horizon sensor components have finished MSHA (U.S.) and IEC (International) certification.
A total of 6360 mud samples were obtained, in 62 collections made with an exhaustive sampling device, from banana drains on the West Indian island of St Lucia during fortnightly samplings over a 2½-year...Full Text Available
The engineering and economic feasibility of using the geothermal resources in East Mesa, California, in a new corn processing plant is evaluated. Institutional barriers were also identified and evaluated. Several alternative plant designs which used geothermal energy were developed. A capital cost estimate and rate of return type of economic analysis were performed to evaluate each alternative. (MHR)
This paper details the development of a decontamination approach for the West Valley Demonstration Project (WVDP), Decontamination Project Plan (Plan). The WVDP is operated by West Valley Nuclear Services Company (WVNSCO), a subsidiary of Westinghouse Government and Environmental Services, and its parent companies Washington Group International and British Nuclear Fuels Limited (BNFL). The WVDP is a waste management effort being conducted by the United States Department of Energy (DOE) at the site of the only commercial nuclear fuel reprocessing facility to have operated in the United States. This facility is part of the Western New York Nuclear Service Center (WNYNSC), which is owned by the New York State Energy Research and Development Authority (NYSERDA). As authorized by Congress in 1980 through the West Valley Demonstration Project Act (WVDP Act, Public Law 96-368), the DOE's primary mission at the WVDP is to ...
Various research programs on coal liquefaction are described. Research efforts are reported from the University of Kentucky, University of Pittsburgh, West Virginia University, University of Utah, and the Center for Applied Energy Research. Research areas include depolymerization, desulfurization, coprocessing catalysis, hydrogenation, and solvent extraction. (CBS)
There are over 4,500 petroleum platforms in the north-central Gulf of Mexico. Explosives are commonly used to remove platforms and have the potential to kill nearby sea turtles. From June 1988-June 1990, the authors used aerial surveys to study turtle density and the spatial relationship between turtles and platforms offshore of Louisiana. They sighted 316 turtles most of which (92%) were loggerheads. Seventy-eight percent were sighted just east of the Mississippi River offshore of the Chandeleur Islands. East of the river, turtle densities ranged from 0.92 (winter) to 4.83 turtles/100 sq km (spring). West of the river, annual densities ranged from 0.11-0.50 turtles/100 sq km. East of the river, three statistical tests indicated that turtles were generally closer to platforms than expected by chance alone. West of the river, turtles were randomly located with respect to platform locations. Before explosives are used, current mitigation measures ...
BackgroundIn Nigeria ACT use at the community level has not been evaluated and the use of antimalarial drugs (commonly chloroquine (CQ)) at home has been shown to be largely incorrect....Full Text Available
The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This ...
The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This ...
A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ...
In order to obtain highly reliable InGaP/InGaAlP inner stripe (IS) lasers, the authors have clarified the relation between the maximum CW operation temperature and other laser characteristics, such as the pulsed threshold current, characteristic temperature, series resistance, and thermal resistance. The Al composition of the cladding layer, the carrier concentration of the p-cladding layer, and the thicknesses of the active layer and cladding layer have been optimized. It was found that an Al composition of 0.7 was the most suitable for the cladding layer, and the optimized carrier concentration was 4 x 10/sup 17/ cm/sup -3/. A maximum temperature of 90/sup 0/C was obtained for a 0.1 /mu/m active layer thickness and a 0.6 /mu/m cladding layer thickness. This is the highest value for InGaP/InGaAlP IS lasers, to our knowledge. In the case of a 0.06 /mu/m active layer thickness and a 0.8 /mu/m cladding layer thickness, a maximum temperature of ...
We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for ...
Two plasma chemistries, i.e., CH{sub 4}/H{sub 2}/Ar and Cl{sub 2}/Ar, were compared for the etching of InGaP, AlInP, and AlGaP under inductively coupled plasma (ICP) conditions. While the etching with CH{sub 4}/H{sub 2}/Ar discharges appears to be ion driven, Cl{sub 2}/Ar discharges showed an additional strong chemical enhancement. The highest etch rate ({approximately}1 {mu}m/min) for InGaP was achieved at high ICP source power ({ge}750 W) with the Cl{sub 2}/Ar chemistry. Cl{sub 2}/Ar discharges provided very smooth surfaces in all three materials with root-mean-square roughness measured by atomic force microscopy around 2 nm. This result may be due to the efficient ion-assisted product desorption in this chemistry. The etched near-surface region of InGaP ({approximately}100 {Angstrom}) with Cl{sub 2}/Ar maintained almost the same stoichiometry as that of the unetched control. By contrast, the CH{sub ...
One of the refinements of modern Nuclear Medicine is the capacity of providing dynamic and kinetics images of the administered radiopharmaceutical, reproducing its transport mechanism, action sites, receptor binding and excretion route. With the continues technological advances new radiopharmaceuticals have been developed in order to express higher specificity and with higher characters of affinity between receptor/complex. One radiopharmaceutical is formed by a reagent or bio molecule that has in its structure a radioisotope, that has the objectives of carrying it to the organs of affinity or to benign or malign tumoral process. Somatostatin inhibits the growing and proliferation of several tumoral cells. Somatostatin analogs bind to somatostatic receptors that are expressed in different kind of neoplasia DOTA-LANREOTIDE (DOTALAN) is an octapeptide analog to somatostatin. The interest of labeling the bio conjugate with gallium-67 in Nuclear Medicine comes from its physical, chemical ...
Indium-111 is currently the radionuclide of choice for colonic transit study. However, it is expensive and not available in many hospitals. Technetium-99m has been proposed for colonic transit study but the short half-life has limited its use. Gallium-67 citrate is inexpensive and available in most countries. Most importantly, it has a suitable half-life for colonic transit study. Attempts have been made in some studies to use {sup 67}Ga citrate to label activated charcoal, but the results have not been good because of poor stability. In this study, we successfully labelled activated charcoal with {sup 67}Ga citrate by adding alcohol and 5% glucose solution. To evaluate the in vitro stability, the {sup 67}Ga-activated charcoal was incubated in a milieu mimicking the intestinal content, containing lipase, trypsin and glycochenodeoxycholate at different pH values (6.0, 7.0, 7.4 and 8.0) and for different durations (0 h, 24 h, ...
Radiation doses to workers at the Manhattan Engineer District (MED) and US Atomic Energy Commission (AEC) sites due to external irradiation during 1940--1960 are reviewed. Categorized radiation dose data were available from AEC annual reports for some years. Annual individual radiation dose data for ten MED/AEC sites for all years were available from the US Department of Energy`s (DOE) Comprehensive Epidemiologic Data Resource (CEDR). These data are combined to produce an estimate of external collective dose equivalent to 172,000 person-rems (1720 person-Sv) for 1940--1960. During this period there were 41 overexposures, 19 criticality incidents, and 3 deaths due to acute radiation syndrome among several hundred thousand workers.
The 1992 New Mexico State Legislature directed the Interstate Stream Commission (ISC) to study the feasibility of clearing and deepening the channel of the Rio Grande between Albuquerque and Elephant Butte to improve water conveyance and water conservation. The ISC requested the US Army Corps of Engineers-Albuquerque District (COE) to undertake this study under the Planning Assistance to States Program. The study was divided into two phases. Phase 1 consisted of an analysis of the sediment contribution to the Rio grande from the tributaries and an evaluation of the existing US Geological Survey (USGS) sediment gage data. Phase 2 will be an analysis, through the use of an HEC-6, Scour and Deposition in Rivers and Reservoirs, computer model, to determine the long-term performance of any Rio Grande channel improvements. This narrative presents the Phase 1 methods and results.
Municipal power systems developed early in the Pacific Northwest, but a new dimension was added in the 1930s when the public utility district (PUD) concept combining urban and rural areas encited vigorous debate and the public rejected private-utility candidates. A favorable national climate developed for consumer-owned systems during the 1920s and 30s encouraging the passage of the Federal Water Power Act, the creation of the Tennessee Valley Authority, the building of Hoover Dam, and the establishment of the Bonneville Power Administration. This article reviews developments following the Public Utility Act of 1935, which authorized the Federal Power Commission and the uniform system of accounts. After tracing the record of investigations and policy trends during the Roosevelt era, it concludes that utilities benefited from accounting regulations. (DCK)
Introduction: Restrictions in prescribing broad spectrum antimicrobials have been part of a strategy to reduce Clostridium difficile cases in the UK in recent years. However, there has been little work on assessing the safety of alternative antimicrobial agents. Methods: We performed an uncontrolled prospective observational survey over a 1-year period to determine the effectiveness and safety of a new antimicrobial stewardship programme in a district hospital in the UK. Results: In total, 227 Gram-negative bacteraemias (203 episodes) occurred in the study period. Guidelines were adequate in 194 of 203 (95%) episodes and 163 episodes (80.2%) received adequate therapy. Patients in the inadequate therapy group had >2-fold increased likelihood of death [odds ratio (OR) = 2.63, 95% confidence ...
Landslides on ancient embankments, burial mounds of Imashiro-zuka and Nishimotome-zuka, induced by historical earthquakes related to the tectonic movement of active fault systems located between northern Osaka and Kobe, are discussed. The geological conditions of the foundation of the mounds, the lithology, stiffness, and the position of the mound relative to the fault systems, contributed to the collapse of the mounds. Obvious interior structures of landslides revealed the inherent deformation process, and provided significant insight into landslide mechanisms. Rapid increasing pore water pressure was necessary to facilitate sliding along the almost horizontal slip surfaces developed in the main part of the landslide bodies on the Imashiro-zuka mound. Liquefaction analysis using both the ...
Chose the arid interior district Shiyang River basin four issues of Landsat/TM images from 1986 to 2006 to visually interpret, and analyze the natural succession of ecological environment and the landscape pattern characteristic under the human activity interference. The results showed that in past 20years, the number of landscape patch has increased, but the average patch size was decreasing, which explained that the landscape fragmentation degree was increasing, the landscape integrity was declining. The edge density of landscape remained invariable basically, which explained its stability maintained good. The diversity and evenness index continually enhanced, the diversity increased from 0.73 in 1986 to 0.84 in 2006. The mean core patch area of study area reduced from134.47hm2 in 1994 t...
In a water well sunk in the Grafschaft Bentheim region of northern Germany, small volumes of methane were emitted regularly and large volumes of methane in eruptions at irregular intervals. After some extreme gas eruptions in 2002 and 2004, the Grafschaft Bentheim district government initiated a project to investigate underground conditions in the region between Nordhorn and Bad Bentheim in order to prevent potential hazards to the locals population. The main purpose of the project was to provide information on underground mechanisms as far as possible in order to develop long-term safety strategies for freshwater supply in the region. (orig.)
This paper is part of a study that assessed the level of commitment of primary schools of remote area dwellers (RADs) to basic education between October 2004 and April 2005. The research question focused on the level of commitment of schools to universal basic education, school-community partnership in school governance and parental involvement in the way the curriculum was delivered. Questionnaire and interviews were used. The results show a significant relationship between teachers' perceptions and variables such as district, qualifications, age, location, and experience. There is consistency between teachers' perceptions and children's academic performance. It has been found that learner achievement in RADs schools is low and that parents are not actively involved in their children's education due to the policy environment and school management practices.
Land degradation reduces the ability of the land to perform many biophysical and chemical functions. The main aim of this study was to determine the status of land degradation in the Budgam area of Kashmir Himalaya using remote sensing and geographic information system. The satellite data together with other geospatial datasets were used to quantify different categories of land degradation. The results were validated in the field and an accuracy of 85% was observed. Land use/land cover of the study area was determined in order to know the effect of land use on the rate of land degradation. Normalized differential vegetation index (NDVI) and slope of the area were determined using LANDSAT-enhanced thematic mapper plus (ETM+) data, advanced space borne thermal emission and reflection radiome...
The primary objective of this study was to evaluate the potential environmental effects (both adverse and beneficials) of aquifer thermal energy storage (ATES) technology pertaining to microbial communities indigenous to subsurface environments (i.e., aquifers) and the propagation, movement, and potential release of pathogenic microorganisms (specifically, Legionella) within ATES systems. Seasonal storage of thermal energy in aquifers shows great promise to reduce peak demand; reduce electric utility load problems; contribute to establishing favorable economics for district heating and cooling systems; and reduce pollution from extraction, refining, and combustion of fossil fuels. However, concerns that the widespread implementation of this technology may have adverse effects on biological systems indigeneous to aquifers, as well as help to propagate and release pathogenic organisms that enter thee environments need to be resolved. 101 refs., 2 tabs.
This report summarizes all work of the Limited Energy Study, Energy Engineering Analysis Program (EEAP), Fort Hunter Liggett, California, authorized under Contract Number DACA05-92-C-0155 with the U.S. Army Corps of Engineers, Sacramento District, California. The purpose of this study is to develop projects and actions that will reduce facilities energy consumption and operating costs at Fort Hunter Liggett. Implementation of these projects will contribute to achieving the goal of the Army Facilities Energy Plan of a reduction in energy consumption per square foot of building floor area of 20 percent by FY2000 from FY1985 baseline levels.
Recently it is strongly required to reduce energy consumption to cope with the global warming. Since energy consumption in commercial and residential sectors are increasing while industrial sector is almost constant in Japan, policies to lead energy conservation in urban areas is quite important. This study aims at investigating the performance of urban energy systems which install combined heat and power (CHP) as a district heating and cooling (DHC) plant and the influence of CHP on the structure of electric power systems of utilities. The behavior of energy technologies and the possibility of energy conservation are evaluated based on an optimization model with respect to total system cost. Sensitivity analysis of population allocation into urban areas indicates that fossil fuel consumption varies in the range of 10--20% compared with conventional systems.
Date palm (Phoenix dactylifera) is widely cultivated in Kutch district of Gujarat and the fruits are harvested at immature stage before the onset of monsoon to prevent spoilage. The immature date fruits with less commercial value were used for processing into date juice concentrate. Immature dates were crushed and treated with 0.1% pectinase enzyme for 120 min to obtain maximum juice. Date juice was found to be rich in reducing sugars (16.1%) and total sugars (18.3%). Juice was pasteurized at 85?C to inactivate the enzyme, cooled and centrifuged at 3000 rpm to get clear juice. The juice was concentrated in a thin film evaporator to a total soluble solids (TSS) of 76?Brix in 2 passes. Chemical composition of date juice during different stages of concentration was determined. Date juice conc...
Using aggregate data for the counties of England and Wales, a negative association is found between mean radon concentrations in dwellings and lung cancer standardised mortality ratios, when regional smoking variations, diet variations, social class variations and population density are controlled. Cornwall and Devon have the highest mean domestic radon gas concentrations, yet the number of lung cancer deaths there was within the range to be expected from relationships not involving radon observed in the rest of the country. While high values of radon exposure appear to concentrate in particular localities, the variations in lung cancer mortality between districts in Cornwall and Devon are small. These findings do not refute the linear exposure-risk hypothesis, but the evidence suggests that relatively few, if any, radon related deaths were associated with the dwellings where radon gas concentrations exceed the recommended action level.
The aim of this report is to describe the present situation regarding biomass utilization in small power plants, 0.5 - 20 MW fuel power. Also discussed are the most important technical, economical and environmental conditions which may prevent a fast expansion of small biomass fueled power plants for generation of district heating in smaller networks and also for electric power generation. Biofuels means a reduction of the net emission of carbon dioxide, but emission of other compounds are not very well known for this size of power plants. There are only a few biofueled power plants in Sweden and only a couple with less than 20 MW power supplied. New concepts are under development but not much have been achieved during the most recent years. 25 refs, 10 figs, 9 tabs.
In this study, a two-stage support-vector-regression optimization model (TSOM) is developed for the planning of municipal solid waste (MSW) management in the urban districts of Beijing, China. It represents a new effort to enhance the analysis accuracy in optimizing the MSW management system through coupling the support-vector-regression (SVR) model with an interval-parameter mixed integer linear programming (IMILP). The developed TSOM can not only predict the city's future waste generation amount, but also reflect dynamic, interactive, and uncertain characteristics of the MSW management system. Four kernel functions such as linear kernel, polynomial kernel, radial basis function, and multi-layer perception kernel are chosen based on three quantitative simulation performance criteria [i.e....
Changes of /sup 67/Ga uptake in the lungs and changes of components of the so-called ground substance of the lung connective tissues of mice were followed for 7 weeks after the start of bleomycin (BLM) administration (20 mg/kg body weight IP, twice weekly for 5 weeks; this treatment induced fibrosis of the lung). /sup 67/Ga uptake of the lung was elevated at 1 week, and reached a maximum at 5 weeks (3.00+-0.11% dose/g lung), and then decreased slightly at 7 weeks. The uronic acid content in the 1.2 M NaCl-soluble fraction, which contained predominantly heparan sulfate (HS), was increased at 1 week, peaked at 3 weeks, and then remained unchanged up to 7 weeks. This pattern was similar to that of /sup 67/Ca acumulation in the lungs. The uronic acid content of the 0.4 M NaCl-fraction, which contained predominantly hyaluronic acid (HA), was decreased at 1 week, but increased to a maximum at 3 weeks, then decreased to about the initial level at 5 ...
Si and Si/P ion implantation doping of In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P has been studied for several Si and P doses at energies of 90 and 100 keV, respectively. For single Si implants in InGaP a maximum Hall sheet electron concentration of 1.33{times}10{sup 13} cm{sup {minus}2} is achieved for a Si dose of 5{times}10{sup 13} cm{sup {minus}2}. When an optimum dose (2.5{times}10{sup 13} cm{sup {minus}2}) P coimplant is performed this electron concentration is increased by 65{percent}. The same dose Si implants in InAlP show a maximum effective activation of 3.9{percent} with no P coimplantation and 5.2{percent} with a P-implant dose 1.5 times the silicon dose. The apparent donor ionization energies are estimated from variable temperature Hall measurements to be 2{endash}5 meV for InGaP and {approximately}80 meV for InAlP. The deeper level in InAlP is attributed to the DX level found in the Al-containing ...
Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to n type Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of {approximately} 6 {times} 10{sup {minus}6} {Omega}-cm{sup 2} and {approximately} 1 {times} 10{sup {minus}5} {Omega}-cm{sup 2} have been obtained on Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P respectively (both doped to {approximately} 2 {times} 10{sup 18} cm{sup {minus}3}). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al{sub 0.5}In{sub 0.5}P and n-Ga{sub 0.5}In{sub 0.5}P are presented.
By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al{sub 0.5}Ga{sub 0.5}As and In{sub 0.53}Ga{sub 0.47}As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, {ital E}({Gamma}{sub 1{ital c}}) of AlP, {ital E}({ital L}{sub 1{ital c}}) of AlAs, and {ital E}({ital L}{sub 1{ital c}}) of AlSb are discussed and attributed to various ...
By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al_0_._5Ga_0_._5As and In_0_._5_3Ga_0_._4_7As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, E(#GAMMA#_1_c) of AlP, E(L_1_c) of AlAs, and E(L_1_c) of AlSb are discussed and attributed to various experimental uncertainties. Several other quasiparticle-excitation-related ...
The corrosion and passivation behaviour of bulk polycrystalline martensite Ni{sub 50}Mn{sub 30}Ga{sub 20} and austenite Ni{sub 48}Mn{sub 30}Ga{sub 22} alloys was compared in electrolytes with different pH values. Linear anodic and cyclic potentiodynamic polarisation methods and anodic current transient measurements have been conducted for the alloys and their constituents to analyze free corrosion, anodic dissolution and passive layer formation processes. Electrochemically treated alloy surfaces were characterized with scanning electron microscopy (SEM) and angle-resolved x-ray photoelectron spectroscopy (XPS). The electrochemical response of both alloys is in principal similar and is dominated by the Ni oxidation. In acidic solutions (pH 0.5 and 5) a slightly higher reactivity is detectable for the martensitic alloy which is mainly attributed to enhanced dissolution processes at the multiple twin boundaries. In weakly acidic to strongly ...
The corrosion and passivation behaviour of bulk polycrystalline martensite Ni50Mn30Ga20 and austenite Ni48Mn30Ga22 alloys was compared in electrolytes with different pH values. Linear anodic and cyclic potentiodynamic polarisation methods and anodic current transient measurements have been conducted for the alloys and their constituents to analyze free corrosion, anodic dissolution and passive layer formation processes. Electrochemically treated alloy surfaces were characterized with scanning electron microscopy (SEM) and angle-resolved x-ray photoelectron spectroscopy (XPS). The electrochemical response of both alloys is in principal similar and is dominated by the Ni oxidation. In acidic solutions (pH 0.5 and 5) a slightly higher reactivity is detectable for the martensitic alloy which is mainly attributed to enhanced dissolution processes at the multiple twin boundaries. In weakly acidic to strongly alkaline solutions (pH 5-11) both alloys ...
In an earlier paper (Phys. Rev. Lett. 66, 41 (1991)), we calculated both the dielectric constant ({epsilon}{sub {infinity}}) and the nonlinear optical susceptibilities for second-harmonic generation ({chi}{sup (2)}) in the static limit for AlP, AlAs, GaP, and GaAs in the local-density approximation with and without a self-energy correction in the form of a scissors operator,'' including local-field effects. In this paper, we expand our presentation of this calculation. Agreement with experiment to within 15% for the nonlinear susceptibility is demonstrated where experiments are available (GaP and GaAs); the dielectric constants are in no worse than 4% agreement with experiment. The virtual hole'' contributions are reformulated to avoid large numerical cancellations in the case of near degeneracies. The virtual electron'' terms dominate over the ...
Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 deg. C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current-voltage measurements. It was obtained that annealing resulted in interdiffusion, lateral diffusion along the surface, alloying and bowling up of the metal layers. The current-voltage characteristics of as-deposited Al and Ti/Al contacts were linear, while the Au and Ti/Au contacts exhibited rectifying behaviour. Except the Ti/Au contact which became linear, the contacts degraded during heat treatment at 900 deg. C. The surface of Au and Ti/Au contacts annealed at 900 deg. C have shown fractal-like structures revealed by scanning electron microscopy. Transmission electron microscopy and XRD investigations of the Ti/Au contact revealed that Au diffused into the n-GaN layer at ...
For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of ...
The distribution of carrier-free "2"0"3Pb-acetate, "2"0"3HgCl_2, "5"7Cocl_2, "1"3"7CsCl and "2"0"1TlCl was investigated in rats bearing thigh-implanted Morris 7777 hepatomas. Viable and nonviable tumor tissue was collected in order to determine the relative affinities of the radiopharmaceutical for these tissues. The animals were sacrificed at 4, 24, 48, 72 and 96 hrs following intravenous injection. Washout of the radioisotope from the viable tumor tissue was rapid, the maximum concentration being reached on or before 4 hrs following injection. In contrast, residual activity within the nonviable tumor tissue decreased much more slowly and in some cases even increased with time. Viable tumor-to-muscle and nonvialbe tumor-to-muscle ratios for "2"0"3Pb, "2"0"3Hg and "5"7Co were comparable to the analogous ratios reported for "6"7Ga. However, none of these isotopes approached "6"7Ga as a potential tumor imaging agent because the large ratios were ...
A solid-state precipitation process was used to prepare superconducting tapes containing an A15 phase, V/sub 3/Ga or Nb/sub 3/Al, in a ductile niobium or vanadium containing BCC matrix. Ingots weighing as large as 30 to 50 gms of V-(14 approx. 19 at. %) Ga and Nb-(13 approx. 22 at. %) Al were prepared by arc-melting, homogenized, quenched, warm-rolled over 99% into tape, and aged at temperatures in the range 600/sup 0/C to 1000/sup 0/C to precipitate the superconducting A15 phase. The features demonstrated by the process are very attractive for practical applications. In the V-Ga system, transmission electron microscopy (TEM) studies revealed the A15 precipitates in an elongated form. However, for the Nb-Al samples, deformed and aged at 750/sup 0/C, TEM studies revealed A15 precipitation in fine equi-axed particles which formed as a semi-continuous network over sub-grain boundaries formed by the recovery of ...
Nuclear fuel cycle activities of the former Soviet Union (FSU) have resulted in massive contamination of the environment in western Siberia. We are developing three-dimensional numerical models of the hydrogeology and potential contaminant migration in the West Siberian Basin. Our long-term goal at Pacific Northwest Laboratory is to help determine future environmental and human impacts given the releases that have occurred to date and the current waste management practices. In FY 1993, our objectives were to (1) refine and implement the hydrogeologic conceptual models of the regional hydrogeology of western Siberia developed in FY 1992 and develop the detailed, spatially registered digital geologic and hydrologic databases to test them, (2) calibrate the computer implementation of the conceptual models developed in FY 1992, and (3) develop general geologic and hydrologic information and preliminary hydrogeologic conceptual models relevant to the more detailed ...
We present the results of an isophotal shape analysis of three samples of galaxies in the Coma cluster. Quantitative morphology, together with structural and photometric parameters, is given for each galaxy. Special emphasis has been placed on the detailed classification of early-type galaxies. The three samples are: i) a sample of 97 early-type galaxies brighter than m_B = 17.00 falling within one degree from the center of the Coma cluster; these galaxies were observed with CCD cameras, mostly in good to excellent resolution conditions; ii) a magnitude complete sample of 107 galaxies of all morphological types down to m_B = 17.00 falling in a circular region of 50 arcmin diameter, slightly offcentered to the North-West of the cluster center; the images for this and the next sample come from digitized photographic plates; iii) a complete comparison sample of 26 galaxies of all morphological types down to m_R = 16.05 (or m_B \\simeq 17.5), also in a region of 50 ...
Laboratory experiments were conducted to simulate the transfer of acidic THOREX waste from Tank 8D-4 into the alkaline PUREX waste in Tank 8D-2 at West Valley. The purpose of the experiments was to explore means of minimizing the production of nitric oxide (NO) gas during mixing of the two wastes and to assess the potential for the gas to further react in the vapor space possibly leading to enhanced corrosion of the tank walls. Forty one THOREX/PUREX mixing tests were conducted to explore the effects of stirring rate, pH, THOREX addition rate, THOREX or PUREX dilution, and temperature. The two most important criteria for minimizing NO production were to maintain some degree of agitation and the keep the pH in the PUREX high, preferably >12. Steel corrosion tests were performed in the presence of low partial pressures of NO{sub 2} and liquid water or water vapor. The NO{sub 2} (from oxidation of NO in the vapor space) concentrations were representative of those ...
The geology and hydrology of the reference New Production Reactor (NPR) site at Savannah River Site (SRS) have been summarized using the available information from the NPR site and areas adjacent to the site, particularly the away from reactor spent fuel storage site (AFR site). Lithologic and geophysical logs from wells drilled near the NPR site do not indicate any faults in the upper several hundred feet of the Coastal Plain sediments. However, the Pen Branch Fault is located about 1 mile south of the site and extends into the upper 100 ft of the Coastal Plain sequence. Subsurface voids, resulting from the dissolution of calcareous portions of the sediments, may be present within 200 ft of the surface at the NPR site. The water table is located within 30 to 70 ft of the surface. The NPR site is located on a groundwater divide, and groundwater flow for the shallowest hydraulic zones is predominantly toward local streams. Groundwater flow in deeper Tertiary sediments is north to Upper ...
Preliminary field investigations suggest three detachments in the Sadlerochit and Shublik Mountains: (1) the Kingak Shale, (2) along the pre-Mississippian unconformity, and (3) within the pre-Mississippian basement. Thrust faults that cut the overlying Mississippian and younger section have horizontal displacements of 5-8 km and emplace pre-Mississippian rocks on Cretaceous strata. A large number of smaller thrust faults, responsible for deformation of the pre-Mississippian surface contribute to shortening. Structures involving the pre-Mississippian section trend east-west whereas earlier formed structures related to the Kingak Shale decollement trend east-northeast-to west-southwest. Possible exploration leads beneath the coastal plain include: (1) large, broad, basement involved structural culminations that may have subtle seismic expressions and (2) pre-Mississippian potential reservoirs thrust over Cretaceous source beds. Possible ...
North Slope of Alaska has huge oil deposits in heavy oil reservoirs such as Ugnu, West Sak and Shrader Bluff etc. The viscosity of the last two reservoir oils vary from {approx}30 cp to {approx}3000 cp and the amount in the range of 10-20 billion barrels. High oil viscosity and low formation strength impose problems to high recovery and well productivity. Water-alternate-gas injection processes can be effective for the lower viscosity end of these deposits in West Sak and Shrader Bluff. Several gas streams are available in the North Slope containing NGL and CO{sub 2} (a greenhouse gas). The goal of this research is to develop tools to find optimum solvent, injection schedule and well-architecture for a WAG process in North Slope shallow sand viscous oil reservoirs. In the last quarter, we have developed streamline generation and convection subroutines for miscible gas injection. The WAG injection algorithms are being developed. We formulated a ...
The northeastern part of the Great Divide basin is a separate, unique, and until recently, little-explored subbasin sometimes called the Bison basin. It is bounded by the Wind River Mountains, Sweetwater-Granite Mountain foreland uplift, Lost Soldier-Wertz structure, and a little-studied very positive east-west structural arch approximately coincident with the Sweetwater-Fremont county line. A comprehensive seismic, Landsat, and subsurface geologic examination or, better, dissection of the Bison basin was initiated in 1978. Numerous oil and gas prospects were delineated by this study. Since this small, 12 by 40 mi (19 by 64 km) basin is bordered by known reserves of 260 million bbl of oil and 90 million bcf of gas, these prospects proved to be a popular target of the drill bit. At least one of these prospects appears to be productive; others are currently being drilled. The presence of major east-west wrench faults, a well-documented foreland ...
This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the ...
The difficulty in making good Ohmic contact at the interfaces with p-doped ZnSe is an important problem hindering the realization of blue-light-emitting diode lasers based on the II-VI semiconductor technology. So far no metal or semiconductor material has been found to have a low enough barrier at the (001) interface with ZnSe. A possible solution to this problem is the insertion of a so-called {ital barrier-reduction layer} at the interface with ZnSe. We have investigated the interface formation energies and valence-band offsets at the (001) interface between Al{sub x}Ga{sub 0.5{minus}x}In{sub 0.5}P and ZnSe. The results of our calculations show the existence of a strong interdependence between the valence-band offset and the interface geometric structure. The interface is found to have structural and electronic similarities to the GaAs-ZnSe(001) system. The very low values obtained for the valence-band offset confirm the possibility of using ...
We have investigated the characteristics of ion-beam-induced spontaneous etching (IBISE) of GaAs in Cl_2 ambient by using a Ga-focused ion beam (FIB) with an energy ranging from 3 to 15 keV. The etched depth of the irradiated region was more than 20 times greater than that of unirradiated region. When the sputtered depth by FIB irradiation amounted to around 8 A at each ion energy, the etched depth in Cl_2 ambient for 1 hour became saturated. The saturated etched depths were 450, 550, 750 and 800 A at the ion energy of 3, 5, 10 and 15 keV, respectively. The residual damage of the etched surface was also investigated by photoluminescence (PL) measurement. The maximal PL intensity was obtained at around the threshold dose of IBISE and increased with decreasing ion energy. The full recovery of PL intensity was observed at the ion energy of 3 keV after annealing at 400degC. (author).
Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first observation of strain-enhanced electron spin ...
The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min{sup -1}. The transformation to the amorphous state begins at 140 K and is completed near room temperature. The {beta}-Sn type structure was shown to represent only the mean lattice of the high-pressure GaSb-II phase. The superstructure of this phase widely varied with temperature and is caused by the ordered displacement of atoms. The temperature range of the metastable crystalline phase relaxation is divided into three intervals according to the temperature dependence of the tetragonality ratio (c/a). At the boundaries of these temperature intervals, i.e. temperatures T = 170 and 230 K, two second-order phase transitions are observed. Anomalous heat and volumetric effects were observed earlier by means of calorimetry ...
The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min-1. The transformation to the amorphous state begins at 140 K and is completed near room temperature. The ?-Sn type structure was shown to represent only the mean lattice of the high-pressure GaSb-II phase. The superstructure of this phase widely varied with temperature and is caused by the ordered displacement of atoms. The temperature range of the metastable crystalline phase relaxation is divided into three intervals according to the temperature dependence of the tetragonality ratio (c/a). At the boundaries of these temperature intervals, i.e. temperatures T = 170 and 230 K, two second-order phase transitions are observed. Anomalous heat and volumetric effects were observed earlier by means of calorimetry and ...
Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 #mu#m was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence ...
The formation of porous structures of nanometre size (nanoporous structures) on germanium (Ge) surfaces by focused ion beam (FIB) irradiations was investigated using various FIB conditions such as ion species, irradiation energies, total fluences, fluence rates, and incident angles. FIB-irradiated regions were observed using a scanning electron microscope and an atomic force microscope. It is found that, using a focused Ga ion beam (Ga FIB) at an energy of 100 keV, the irradiated Ge surface swelled up to ion fluence of 2 x 10"1"7 cm"-"2 with nanoporous structures and then was etched for larger fluences. The shape of swollen nanoporous structures depended on the fluence rate and the incident angle of the Ga FIB. However, such porous structures were observed neither for low-energy (15-30 keV) FIB irradiations using Si and Au ions nor for high-energy (200 keV), heavy ion (Au) irradiation. These observations might be helpful in ...
Powders with nominal compositions (in atomic percent) Ti-48Al and Ti-48Al-2Nb-2Cr were prepared by the plasma rotating electrode process (PREP) and gas atomization (GA) techniques. As-solidified and heat-treated (1000degC per 3 h) powder samples were examined by metallography, scanning electron microscopy, X-ray diffraction and transmission electron microscopy. The microstructures of the powders were characterized as a function of atomization technique, alloy content, powder particle size (solidification rate) and thermal history. All of the as-solidified powders were comprised of disordered [alpha], and ordered [alpha][sub 2]-Ti[sub 3]Al and [gamma]-TiAl. For both alloys, a larger volume fraction of [alpha] and [alpha][sub 2] was observed in the PREP powders relative to GA powders of comparable size. Additionally, for both alloys and both atomization techniques, the volume fraction of [alpha][sub 2] was observed to increase with decreasing ...
We have studied photoluminescence and thermoluminescence (PL and TL) in CaGa2Se4:Eu crystals in the temperature range 77-400 K. We have established that broadband photoluminescence with maximum at 571 nm is due to intracenter transitions 4f6 5d-4f7 (8S7/2) of the Eu2+ ions. From the temperature dependence of the intensity (log I-103/T), we determined the activation energy (Ea = 0.04 eV) for thermal quenching of photoluminescence. From the thermoluminescence spectra, we determined the trap depths: 0.31, 0.44, 0.53, 0.59 eV. The lifetime of the excited state 4f6 5d of the Eu2+ ions in the CaGa2Se4 crystal found from the luminescence decay kinetics is 3.8 ?sec. (authors)
Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al{sub {ital x}}Ga{sub 1{minus}{ital x}}InP{sub 2}; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. {copyright} {ital 1996 The American Physical Society.}
Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al_0_._2_0Ga_0_._8_0InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of different barrier configurations as well as the incorporation of additional tunnel barriers on the optical properties has been investigated. The confinement energy between the dot barrier and the surrounding barrier layers, which is the sum of the band discontinuities for the valence and the conduction bands, was chosen to be approximately 190 meV by using Al_0_._5_0Ga_0_._5_0InP. In combination with 2 nm thick AlInP tunnel barriers, the internal quantum efficiency of these barrier configurations can be increased by up to a factor of 20 at elevated temperatures with respect to quantum dots without such layers. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Distributed Bragg reflectors (DBRs) composed of In_0_._5Al_0_._5P/In_0_._5(Al_yGa_1_-_y)_0_._5P quarter-wave layers have been prepared using metalorganic vapor phase epitaxy. The structures were grown over a wide range of high-index layer composition (0#<=#y#<=#0.6) and peak reflectivity wavelength (720 nm#<=##lambda##<=#565 nm, covering the spectrum from deep red to green). In all cases observed and calculated reflectance spectra were in excellent agreement. Using these DBRs, an undoped all-phosphide visible vertical cavity surface-emitting laser structure was grown. Under pulsed optical excitation at room temperature, lasing was obtained at a wavelength of #lambda##approx#670 nm, with a threshold power density comparable to that observed from similar structures prepared using AlAs/AlGaAs DBRs.
A modified epitaxial design leads to straightforward implementation of short (1{lambda}) optical cavities and the use of C as the sole {ital p}-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that by N2 plasma.
The following work deals with the realization, characterization and modeling of GaInP / AlGaInP high power semiconductor laser diodes in the visible wavelength range. In addition to the exploration and optimization of efficiency, temperature stability and maximum output power of multi-mode lasers especially methods for longitudinal and lateral mode stabilization of high power laser diodes have been investigated. Although often the focus of optimization is on the threshold current density, in this work the performance of the laser diode for an operation point around 1 Watt under continous wave operation is regarded as the figure of merit. It turns out that low carrier densities are key for an efficient reduction of the heterobarrier leakage currents. In addition, large optical cavity structures with low internal losses enable high external quantum efficiencies even for long cavities. Finally high laser effiency as well as an efficient cooling ...
A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor ...
Thirty-six patients with acquired immunodeficiency syndrome (AIDS), who were febrile but without localizing signs, underwent indium-111 leukocyte scintigraphy 24 hours after injection of labeled white blood cells (WBCs) and were restudied 48 hours after injection of gallium-67 citrate. Fifty-six abnormalities were identified as possible sources of the fever; 27 were confirmed with biopsy. Of these 27, 15 were identified only on In-111 WBC scans (including colitis, sinusitis, and focal bacterial pneumonia); six, only on Ga-67 scans (predominantly Pneumocystis carinii pneumonia and lymphadenopathy); and six, on both studies (predominantly pulmonary lesions). In-111 WBC scanning revealed 21 of 27 abnormalities (78%) and gallium scanning, 12 of 27 (44%). If only one scintigraphic study has been performed, particularly with Ga-67, a significant number of lesions would not have been detected. The authors believe radionuclide evaluation of the febrile ...
A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of approx 1nA and a ...
Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.
Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.
... Thursday: South Brisbane Sailing Club, Orleigh Park Hill End Terrace, West End. Friday: Booroodabin Bowls Club, 126 Breakfast Creek Road, Newstead. Related Photos Ros Capeness and Jeff Shearin: six months on (Emma Sykes - ABC Local) Map Fig Tree Pocket 4069 Subscribe/RSS Subscribe to ABC Brisbane videos Subscribe to all ABC Local videos Topics: floods, people Locations: brisbane-4000,...
... Thursday: South Brisbane Sailing Club, Orleigh Park Hill End Terrace, West End. Friday: Booroodabin Bowls Club, 126 Breakfast Creek Road, Newstead. Related Photos Six months on: Kerrin Quinn's Story (Emma Sykes - ABC Local) Map Fernvale 4306 Subscribe/RSS Subscribe to ABC Brisbane videos Subscribe to all ABC Local videos Topics: disasters-and-accidents, floods Locations: brisbane-4000, fernvale-4306 Print page ...
The relationship between short term relative sea-level oscillations and the reef, off-reef deposits geometry of an Upper Devonian third order sequence highstand of the Nisku Formation in west central Alberta was studied through the analysis of high resolution sequence stratigraphy. Hydrocarbon generation was reconstructed by total organic carbon values and migration patterns that were dependent on the geometry of three fourth order sequences. This stratigraphic reconstruction provided the key to recent hydrocarbon discoveries such as in the Brazeau southern reef margin.
The study required by the West German Ministry of Research and Technology (RS 605) for the Committee on 'Future Nuclear Energy Policy' of the 9th German Parliament is concerned with the following main points: 1) Assessment of technical risks from the social aspect; 2) Discussion of terms and quantification of risks; 3) 'Engineering judgment' and 'questionable' methods in the Fast Breeder analysis of the Society for Reactor Safety (GRS); 4) Assessment criteria of potential damage.
In the power station West Block 2 at Voerde (Federal Republic of Germany), cracks in the final stage of the shaft were determined at the ND1 rotor of the 350 MW condensation tube was determined. A purely mechanical preparation of the crack was not possible due to the depth of the crack. A substitute rotor was not available. A repair solution was developed covering a welding of a new shaft section to the existing rotor. The authors of the contribution under consideration report on the damage, cause of the damage, repair solution and the process of repair.
Greenland is the world's largest island, with an area of 2.2 million square kilometres, 80 % of which is covered by the ice sheet. The climate is Arctic, but as Greenland stretches 2600 km from north to south, there is a huge variability in climate, with temperature decreasing from south to north. Due to the influence of oceanic currents, the west coast is slightly warmer than the east coast. Precipitation also decreases strongly from the south to the north, and also with distance from the coast. Kangerlussuaq is located in the dry, continental area of central west Greenland. The bedrock of Greenland is dominated by Precambrian gneisses, with sedimentary rocks occurring in some areas of East and North Greenland, and smaller areas of basalts. All of Greenland has been glaciated several times and has thus been eroded and shaped by the ice, as it still is at the ice margin. Soils are generally thin, and especially in the gneiss regions rather poor ...
This document is a Maintenance Implementation Plan (MIP) for the T Plant Facility complex located in the 200 West Area of the Hanford Reservation in Washington state. This plan has been developed to provide a disciplined approach to maintenance functions and to describe how the T Plant facility will implement and comply with the regulations according to US DOE order 4330.4B, entitled Maintenance Management Program, Chapter 2.0 {open_quotes}Nuclear Facilities{close_quotes}. Physical structures, systems, processes, as well as all associated equipment specifically assigned to these groups are included in the MIP.
PUREX high-level waste (HLW) is contained at the West Valley Demonstration Project (WVDP) in an underground carbon-steel storage tank. The HLW consists of a precipitated sludge and an alkaline supernate. This report describes the system that the WVDP has developed and implemented to resuspend and wash the HLW sludge from the tank. The report discusses Sludge Mobilization and Wash System (SMWS) equipment design, installation, and testing. The storage tank required modifications to accommodate the SMWS. These modifications are discussed as well.
Denison Mines Limited is completing two final feasibility studies on the Coalspur thermal coal property in northwestern Alberta and the Belcourt property south of Dawson Creek, B.C. Denison is also carrying out a geological field program on a promising metallurgical coal property, Wildhay, west of Hinton, Alberta. Fording Coal Ltd. will close its Fording River mine for at least the second half of December. Site preparation has started at the Obed-Marsh thermal coal project northeast of Hinton.
Aluminum hydroxide coatings on fuel elements stored in aluminum canisters in K West Basin were measured in July and August 1998. Good quality data was produced that enabled statistical analysis to determine a bounding value for aluminum hydroxide at a 99% confidence level. The updated bounding value is 10.6 kg per Multi-Canister Overpack (MCO), compared to the previously estimated bounding value of 8 kg/MCO. Thermal analysis using the updated bounding value, shows that the MCO generates oxygen concentrate that are below the lower flammability limits during the 40-year interim storage period and are, therefore, acceptable.
The Lake Charles and Port Arthur quadrangles cover approximately 10,950 square miles of land west of the Mississippi River delta area. The area overlies thick sections of the Gulf of Mexico Basin. Surficial exposures are dominated by Recent and Pleistocene sediment. A search of available literature revealed no known uranium deposits. A total of 82 uranium anomalies were detected and are discussed briefly in this report. None were considered significant and all appear to relate to cultural features. Magnetic data appear to be in agreement with existing structural interpretations of the area.
A wind energy study (WEST) in the coastal region of Bangladesh has been undertaken, in collaboration with Local Government Engineering Department (LGED) and with technical support of the UK`s Energy Technology Support Unit (ETSU) under an ODA programme. Seven 25m high masts have just been installed at selected places and data for a complete year will be recorded. A brief account of the mast erection is given and some preliminary data is presented. Results indicate that fresh data is going to give higher figures than the meteorological ones. (author)
Except nuclear industry, diverse structures (hospitals, of research or manufacturers) can have appeal to the use of radioisotopes conditioned under unsealed shape. Such practices lead to tolerate releases in environment in the respect of a statutory device. So the collective network can contain radioisotopes the future of which is going to depend partially on the cleaning applied to waste water. This study through the analysis of a concrete case, has for objective to inform about the future of gamma radioelements present in waste water treated by a wastewater treatment plant. The contamination of the network is essentially due to Tc{sup 99} and I{sup 131}, radioelements present whatever the working day and the hour considered. The total estimated in-load for a day is important, of the order of 4000 MBq for Tc{sup 99} and 15 to 300 MBq for I{sup 131}. The assessment of cleaning of the station shows that this one plays a role towards this pollution through these stages of treatment. ...
Belarus has some experience of wood biomass use for power engineering aims. All the necessary equipment, assigned for power production, is manufactured at own enterprises. Belarus possesses great forest resources, total forests area makes up 8 676,1 thou ha. In the average as for the republic the percentage of forests volume makes up 37,7%. The greatest percent of forest scope have Gomel and Vitebsk regions (44,6% and 38,1% correspondingly). Of 118 administrative regions the forest scope above 20% have 15 regions (Rossonskij - 66,8%, Lel'chitsy - 66,5%). The forest scope less 20% is marked on the territory of 8 regions (Nesvizh - 9,6%, Berestovitsy - 14,6%, Zel'venskij - 14,8%). Wood reserves make up 1 437,9 mln. m"3 on the republic's territory. The greatest wood reserves are noted on the territory of Gomel, (323,6 mln. m"3 ), Minsk (286,4 mln. m"3 ) and Vitebsk (272,0 mln. m"3 ) regions. The least ones - Brest and Grodno regions (191, and 158,7 mln. m"3 correspondingly). Reserves of ...
This paper describes a Honshu-Shikoku linking transmission cable building plan and its technical features. The Chugoku District and the Shikoku District are supplied with power currently by the Chugoku-Shikoku trunk line of 220,000 volts. To cope with the anticipated power shortage, a plan was established to install power cables for 500,000 volts on the Honshu-Shikoku connecting bridge. The plan calls far an installation length of 127.4 km and a transmission capacity of 1.2 million kW per line. The cable installation on the Seto Bridge was completed already, the construction is now in the peak period for building steel towers on the land sections, and laying overhead cables and underground cables. Commencement of the operation is scheduled 1994 on one liner, and 2000 on two lines. The technical features include the Japan's first large-capacity, long-distance underground transmission cable installation, and the installation of the ...
Fission-track age of a bentonitized volcanic ash bed occurring in the middle part of Nagrota Formation. Upper Siwalik, north of Uttarbaini, Jammu district, Jammu and Kashmir, has been determined to be 1.6 #+-# 0.2 m.y. B.P. The radiometric age obtained for the sample roughly coincides with the Olduvai Event (1.6-1.8 m.y.). However, the lithological and paleoclimatic changes in the Upper Siwalik success ion are indicated at the contact between Parmandal Sandstone and Nagrota Formation, i.e. about 1100 m below the 1.6 #+-# 0.2 m.y. datum line in this part. Vertebrat e fauna was studied from 16 sites beneath and 12 above the volcanic ash bed to interpret the biological and palaeoenvironmental aspects of the Nagrota Formation. The assemblage represented in the collection is similar to that of the Pinjor Biozone (Villafranchian) and is assigned a probable age ranging from about 2.9 m.y. to 1.0 m.y. B.P. The stratigraphic interval from the base of Nagrota Formation ...
To utilize solar energy effectively, a method has been developed by which daily clearness indexes can be estimated from phrase of general weather condition, and it has been examined at four places located at different typical climatic divisions in Japan. Successive results of extra-terrestrial solar insulation and measured solar insulation were illustrated at each place. It was found that the envelope of maximal value among measured values is in proportion to the extra-terrestrial solar insulation. Based on the basic clearness index and the meaning of term expressing general weather condition defined by the Meteorological Agency, the general weather condition was quantitated using the clearness index. This value was defined as weather index. Relationship between the measured clearness index at each place and the weather index was analyzed regressively. Correlation between the both was highly close, proportionally. Accordingly, the clearness index can be estimated by multiplying the ...
This document presents a conceptual design for a contingency interim measure (IM) for treatment of the public water supply system at Barnes, Kansas, should this become necessary. The aquifer that serves the public water supply system at Barnes has been affected by trace to low concentrations of carbon tetrachloride and its degradation product, chloroform. Investigations conducted on behalf of the CCC/USDA by Argonne National Laboratory (Argonne 2008a) have demonstrated that groundwater at the Barnes site is contaminated with carbon tetrachloride at concentrations exceeding the Kansas Tier 2 risk-based screening level (RBSL) and the EPA maximum contaminant level (MCL) of 5.0 {micro}g/L for this compound. The Commodity Credit Corporation of the U.S. Department of Agriculture (CCC/USDA) formerly operated a grain storage facility in Barnes, approximately 800 ft east-southeast of the public water supply wells. Carbon tetrachloride was used in the treatment of grain. Another potential source ...
Life cycle oriented methods are increasingly used for environmental assessments (EAs) of the built environment. However, many assumptions are made in such assessments, potentially influencing the results and making the assessment more ambiguous. To increase the reliability of EAs, consequences of the assumptions made have to be better understood. Since energy use in the operation and maintenance phase is an important factor decisive for the overall environmental performance of a building, the purpose of this study is to investigate how the selection of heat and electricity mix affects the assessed environmental performance of buildings. It also aims to suggest how to choose heat and electricity data in EAs of the built environment in general. Applying four different modes of electricity production and two different modes of heat production in a case study of three different buildings with different technical solutions for heat and electricity supply, the study show that choices of heat ...
The work of this association is cut according to 6 axes. Three publications: radiological quality of marine and continental waters of the Normandy coast (synthesis 1997 and 1998); preliminary study of the iodine 129 distribution in the environment of the reprocessing plant of La Hague with terrestrial moss (Homalotecium sericeum); radiological surveillance of the aquatic environment of the nuclear facilities on the area of La Hague (1997 and 1998). The second axis concerns the radiation protection with a campaign of radon measures in a school of the Vire rural district (june 1999). The third part is devoted to the radioecology with the surveillance of radioactivity in the aquatic continental environment of nuclear facilities and the radioecological surveillance (1999) of the building site of Cogema la Hague in the area of tidal range of the Moulinets cove. The fourth part concerns the radioactive waste and environment, with the study of the distribution of the ...
Structural complexities reduce the homogeneity necessary for a site characterization model to an unacceptable level for performance assessment for radioactive waste disposal sites. The proposed site lies between the northern, stable Diablo platform and the southern, mobile Mesozoic Chihuahua tectonic belt. Structural movement along this interface has been active for the past 14,000 years. In addition, the area lies along the northern margin of the Permian Marfa basin and the northeastern margin of the deeply faulted Hueco bolson segment of the late Cenozoic Rio Grande rift system. Recent seismic activity with extensive surface rupture in Quitman Canyon (30 mi southeast of the site) is also documented from the 1931 Valentine, Texas, earthquake (6.4 Richter scale). The site is underlain by either a thrust fault or the complex terminus of a Mesozoic thrust fault. This fault is a segment of the continuous thrust sheet extending from exposures in the Sierra Blanc area, 30 mi east (Devil ...
The Maybell uranium mill tailings site is 25 miles (mi) (40 kilometers [km]) west of the town of Craig, Colorado, in Moffat County, in the northwestern part of the state. The unincorporated town of Maybell is 5 road mi (8 km) southwest of the site. The site is 2.5 mi (4 km) northeast of the Yampa River on relatively flat terrain broken by low, flat-topped mesas. U.S. Highway 40 runs east-west 2 mi (3.2 km) south of the site. The designated site covers approximately 110 acres (ac) (45 hectares [ha]) and consists of a concave-shaped tailings pile and rubble from the demolition of the mill buildings buried in the former mill area. The site is situated between Johnson Wash to the east and Rob Pit Mine to the west. Numerous reclaimed and unreclaimed mines are in the immediate vicinity. Aerial photographs (included at the end of this executive summary) show evidence of mining activity around the Maybell site. Contaminated ...
The 66 fields discovered since the 1960s in the northern West Siberian basin contain at least 22 trillion m/sup 3/ (777 tcf) of proved gas, almost one-third of the world's reserves. Half of these fields are giants (> 85 billion m/sup 3/ or 3000 bcf of reserves). These include the largest and second-largest gas fields in the world-Urengoy (8.099 trillion m/sup 3/ or 286 tcf of gas) and Yamburg (4.81 trillion m/sup 3/ or 170 tcf of gas)-as well as most of the other ten largest gas fields in the world. The West Siberian basin occupies a 3.4-million km/sup 2/ (1.31-million mi/sup 2/) arctic lowland immediately east of the Ural Mountains, extending north under the Kara Sea. It is a composite basin, with Mesozoic-Cenozoic basin fill on top of a Paleozoic basin that overlies a crystalline Archean-Proterozoic framework. The productive zones in the northern basin are principally in the Neocomian section (at an average depth of 2800m or 9200 ...
TlGaSe_2 compound belongs to group of layered semiconductors of A"3B"3C_2"6-type. Photoelectric and optical properties of TlGaSe_2 single crystals were investigated in detail. Influence of gamma-, electron and neutron radiation on photoelectric properties of TlGaSe_2 single crystals is investigated too. The present work deals with experimental results relative to X-ray dosimetric characteristics of TlGaSe_2 crystals at 300 K. X-ray conductivity and X-ray dosimetric characteristic measurements are carried out in low load resistance regime. The source of X-ray radiation is the installation of X-ray diffraction analysis (URS-55a) with the BCV-2(Cu). Intensity of X-ray radiation (E) is regulated by measurement with current variation in tube at each given value of X-ray radiation dose E (R/min) are measured by crystal dosimeter DRGZ-02. X-ray conductivity coefficients K_#sigma# characterising X-ray ...
The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.
The authors report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, they demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50 C from a 15-{micro}m-diameter device.
The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.
A number of materials of composition YSr{sub 2}Cu{sub 3-x}MxO{sub 7{+-}y} with M = Ti, Fe, Co, Al, Ga and Pb were prepared by solid state reactions. They belong to the tetragonal P4/mmm space group and their unit cell parameters were determined and refined from X-ray powder data. The infrared spectra of the compounds were also recorded and are briefly discussed on the basis of their structural characteristics and by comparison with those of related materials. (orig.) 23 refs.
With the preeminence of A-15 superconducting multifilamentary wires in magnet technology, it has become important to understand the thermodynamic factors influencing the formation of these compounds under solid-state reaction conditions. The six systems Nb--Sn, Nb--Ga, Nb--Ge, Nb--Al, V--Si, and V--Ga were prepared as single filament bronze wires and heat treated in an attempt to precipitate the appropriate A-15 compound. The compounds observed to form were categorized using a formation temperature ratio (stability index) based on the melting temperatures of the constituents which make up the single filament composites. This study has led to several predictions regarding the formation of A-15 compounds using a solid-state bronze diffusion technique. The results of experimentation based on these predictions are presented.
EXAFS measurements are useful in determining the local atomic environment of a particular element in a solid. Since there has been some controversy about the nature of the defects produced in A-15 materials by radiation damage, such studies were carried out on some A-15 compounds, V_3Ga which was damaged by neutrons, as well as Nb_3Ge damaged by 2.5 MeV a particles. In the V_3Ga sample, site exchange disorder seems to be the most important result of the neutron damage with less than 20% of the vanadium atoms on wrong sites. However, in the Nb_3Ge samples in addition to site exchange disorder, an unusual splitting of the first near-neighbor distance between the Ge and Nb is found. This splitting, approximately 0.2 A, may explain the large Debye Waller factors observed by Burbank et al.
Red laser diodes emitting at 636 nm and 645 nm are studied as a function of pressure up to 20 kbar and temperature from 300 K down to 80 K. The 636 nm samples reveal anomalous L-I-V dependence at low temperatures and at high pressures. The 645 nm samples do not show these anomalies and can be tuned by pressure and temperature down to 575 nm, i.e., in the 70 nm range with powers above 200 mW and low threshold currents. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.
This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.
Localized beam-processed areas using chemical reactions induced by a 30 keV Ga"+ focused ion beam (FIB) with and without I_2 (etching) and (CH_3)_3CH_3C_5H_5Pt gases (Pt deposition) have been analyzed using a 300 keV Be"2"+ microprobe with a beam spot size of 50-80 nm. The analyzed results have been compared with energy dispersive X-ray (EDX) analysis using an electron beam. The EDX analysis only indicated incorporated impurities at high fluence such as Ga, Pt and C, while microprobe RBS analysis could detect residual iodine with low concentration which couldn't be detected by EDS analysis because of the lower sensitivity of the EDX analysis for heavy atoms.
Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected.
We report on the formation of current blocking regions by O2 plasma treatment to reduce current crowding at the active region above the p-type electrodes of GaN-based vertical light emitting diodes (LEDs). The forward voltage and reverse current (at -5 V) of the plasma-treated LEDs slightly increase with increasing aging time. The output power (at 350 mA) of the plasma-treated LEDs is enhanced by 26% as compared to that of reference LEDs and is comparable to that of LEDs with SiO2 current blocking layers. It is shown that the output power (at 700 mA) of the plasma-treated LEDs is degraded by less than 2% of the initial value after 500 h.
GaInP solar cell interfaces were characterized by admittance spectroscopy. Admittance spectroscopy is shown to be sensitive to the band structure at the heterojunction interfaces. In particular, a correlation between activation energy of the capacitance step in a capacitance versus temperature plot and effective potential barrier for majority carriers is demonstrated, indicating a new method for the determination of potential barriers at heterointerfaces. Using this technique, the effective potential barrier for holes at the p-Al_0_._5_3In_0_._4_7P/p-GaAs interface is found to be equal to 0.6 eV. Effects of interface defects and spreading resistance in the emitter of solar cells are illustrated and discussed.
Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In{sub 0.5}(Al{sub {ital x}}Ga{sub 1{minus}{ital x}}){sub 0.5}P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.
Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In{sub 0.5}(Al{sub {ital x}}Ga{sub 1{minus}{ital x}}){sub 0.5}P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.
The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.
The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.
Heterobarrier blocking structure InGaAlP visible light laser diodes employing a thin active layer (0.04 {mu}m) and asymmetry coatings have been fabricated. The high light-output power operation with this heterobarrier blocking structure was investigated. The light-output power versus cw current curve was linear up to 43 mW and a maximum light output power of 51 mW was obtained. A high-power operation such as 20 mW was maintained at 40 {degree}C. Stable oscillation in the fundamental transverse mode was obtained up to 30 mW. These results show that this heterobarrier blocking structure supplies a sufficient current confinement effect even under a high-light output power operation.
The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.
Timely detection of the pneumatic system problems is important in industry. Many techniques have been employed to solve this problem. In this paper, Genetic Algorithm (GA) based optimal configuration of neural networks is proposed for fault diagnostic of bottle filling systems. Back-propagation is used for neural networks algorithm. The back-propagation algorithm had six inputs and one output. A fitness function was designed to the minimize execution time of ANN model by keeping the number of hidden layer(s) and nodes as low as possible while the mean square error of estimated output error is minimized. The designed GA-ANN combination and the graphical user interface (GUI) eliminate the trial and error process for selection of the fastest and most accurate configuration. The performance of...
A new recurrent neural network power system stabilizer (RNNPSS) based on genetic algorithm (GA) was presented. It shows faster convergence than the linear quadratic regulator (LQR) stabilizer in a multi-machine power system, because the proposed GA based neural network was first trained off-line to determine the optimal values of the learning rates. Otherwise, the RNNPSS consists of just two layers. As such, the time consumption of the damping oscillations is lower than with conventional methods. In addition, the operating range of the RNNPSS is greater than that of the LQR and conventional three layer neural networks, since the RNNPSS can greatly reduce system complexity and effectively damp system oscillations. 9 refs., 7 figs.
Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.
A static plasma grating has been demonstrated experimentally in a large optical cavity FIB-DBR GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam (FIB). The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimization of the laser design is developed and presented here. The computed results show that /kappa/ can be increased by more than an order of magnitude over the 15 cm/sup -1/ experimentally. Therefore, FIB-DBR (or -DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.
A static plasma grating has been demonstrated experimentally in a large optical cavity FIB-DBR GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam (FIB). The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimization of the laser design is developed and presented here. The computed results show that #kappa# can be increased by more than an order of magnitude over the 15 cm"-"1 experimentally. Therefore, FIB-DBR (or -DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.
The energy levels scheme of octahedrally coordinated Ni2+ ion in single crystal, powder nano-single crystal, ceramics and glass-ceramics of MgGa2O4 host matrix, has been calculated in the exchange charge model of crystal field. The parameters of the crystal field acting on the Ni2+ ion are calculated from the crystal structure data, after optimization of the geometry of the system. The energy level schemes have been calculated by diagonalization of the crystal field Hamiltonian of this system. The obtained results were compared with experimental data; a good agreement were demonstrated, which confirm the validity of the model and used method.
Deep level effects in GaAs MOSFET have been characterised in the ohmic channel using DLTS, low frequency excess noise and dispersion technique. An isothermal multi exponential curve fitting method has been devised and implanted into the DLTS system. Multi exponential curve fitting method used to decompose a multi exponential transient into its constituents so that the peak signature can be better characterised for the case whereas several peaks are closely spaced. Low frequency excess noise and dispersion techniques also confirm the trap in signature of the same traps observed in the DLTS measurements. (author)
The low-power operation of a semiconductor buried-heterostructure Raman laser is reported. We are developing these devices for very wide-band optical communication in the terahertz frequency region. It has a structure with a GaP active layer and Al{sub {ital x}}Ga{sub 1{minus}{ital x}}P cladding layers, which are grown by the temperature-difference method under controlled vapor pressure. By making the stripe width 30--40 {mu}m, we have obtained a threshold pump power of 500 mW. A low-threshold semiconductor Raman laser can be pumped by semiconductor injection lasers. We have measured the optical loss of the waveguide and detected the contribution from scattering and leakage at heterointerfaces.
The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)
The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.
A general model for the analysis of metal-semiconductor solar cells is presented. The model takes into account the cell optical properties, carrier recombination effects, semiconductor minority-carrier properties, series resistance, cell thickness, and active surface area. Numerical methods are used to solve the appropriate continuity equations and hence compute the photocurrent density under AMO conditions. The operation of the model is demonstrated using p- and n-type Si and GaAs with Au being taken as the barrier metal. Calculations are presented showing the effect on solar energy conversion efficiency of surface recombination velocity, barrier height, minority-carrier lifetime, barrier metal thickness, collecting grid configuration, and cell thickness. A comparison of practical and computed data for the Au/n-GaAs system yields good agreement. (AIP)
This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron ...
We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the ...
We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the ...
The thermal stability of diffusion barriers is explored on the basis of Bi films at different expedients of deriving of films. The examinations were conducted on the electrostatic accelerator at KNU of name Karazin V.N. under conditions of an isothermal bakeout directly under a proton beam of 1,85 MeV energy.
Background/AimsFabry disease is an X-linked recessive and progressive disease caused by α-galactosidase A (α-GaL A) deficiency. We sought to assess the prevalence...Full Text Available
This thesis dealt with the metal-organic gas phase epitaxy with nitrogen as carrier gas. For this first by means of three-dimensional modelings of the epitaxy process the influence of the carrier gas on the processes was explained. The optimization of the growth parameter for the whole light-emitting-diode structure in double-hetero arrangement resulted that an a temperature of 770 C and a V/ III-ratio of 150 layers with a high crystal quality could be reached.
The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to ...
Magnetic field, thickness and magnetic forming effect on general mode and quantitative parameters of the domain structure (DS) of ferrite-garnet (EuEr)/sub 3/(FeGa)/sub 5/O/sub 12/ monocrystalline plates (111) is investigated. Field interval of circle (cone) and ring domain stability is determined. It is shown that DS of ferrite-garnet crystals with uniaxial an6sotropy has some peculiarities, that can be explained by cubic anisotropy effect.
Urine is a potential source of diagnostic biomarkers for detection of diseases, and is a very attractive means of non-invasive biospecimen collection. Nonetheless, proteomic measurement in urine...Full Text Available