Energy Technology Data Exchange (ETDEWEB)

A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

Energy Technology Data Exchange (ETDEWEB)

In order to realize improve of reliability and economy by duplicate production, rapid supply of repair parts from standardized storage, such were expected as to have continuous order of standardized plant, to ignore site condition, to avoid expansion of regulatory requirement. Standardization program was planned to limitedly promote standardization of safety-related design concept, major specification and basic system composition of reactor and primary systems. The area of standardization had been tried to expand to BOP such as general arrangement and rad-waste system.

International Nuclear Information System (INIS)

Liquid metal ion sources (LMISs) with Ga as ion species are widely used in focused ion beam (FIB) technology for micromachining and surface treatment on the sub-micron and nano-scale. Key features of a LMIS for investigating mechanical properties and 3D-microfabrication of materials are long life-time, high brightness, stable ion current and a highly effective milling ability for the material to be modified. In order to increase the material removal rate, heavier ions than Ga and their clusters should be applied. Bismuth (Bi) is the heaviest, non-radio-active element in the periodic table, is non-toxic and exhibits a low melting point. We have thus produced a long-life (about 1000 h) Bi LMIS with a good beam performance, applicable in any FIB system. Since Bi is the only element in this source, it is not necessary to separate it from other ions by a mass filter. Investigation of the sputtering rate of NiTi shape memory alloys using ...

International Nuclear Information System (INIS)

The radiation dose and the atmospheric dispersion for Pressurized Heavy Water Reactors (PHWR) are based on the CAN/CSA N288.2-M91 standards: for Pressurized Water Reactor (PWR) on the NRC Regulatory Guide 1.145. There are some differences between in the methodologies used in the standards, including the atmospheric dispersion model, the release height, the temperature lapse rate, the cutoff condition. This paper reports on a comparison of standards for atmospheric dispersion models of PHWRs and PWRs in order to determine which one is the more conservative. The comparison between PHWR and PWR for atmospheric dispersion factors and radiation doses confirms that there are no big differences

Energy Technology Data Exchange (ETDEWEB)

This standard addresses the design bases for light water reactor, nuclear power plant structures and components essential for the protection of public health and safety from the potential adverse effects of pipe whip, jet impingement, pressurization of compartments outside containment, environmental conditions and flooding associated with a postulated pipe rupture. The design bases for missile protection and the design bases for containment pressurization are not within this standard.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

The Cordoba and Wolsung projects mark the entry into the international sales arena of the standardized Canadian 600 MWe CANDU-PHW reactor design. The Cordoba station experienced a setback in the early stages when severe inflation in Argentina led to a ren...

International Nuclear Information System (INIS)

This paper will review code and standard and the safety related features of major components of Monju: Components of the Reactor Coolant Boundary; Components of the Reactor Shurdown Systems; Components of the Decay Heat Removal Systems; Components of the Engineered Safety Features; Other Safety Related Components. Their relationship to the system or plant function is emphasized, in reviewing these components.

Energy Technology Data Exchange (ETDEWEB)

Validation of nuclear power reactor signals is often performed by comparing signal prototypes with the actual reactor signals. The signal prototypes are often computed based on empirical data. The implementation of an estimation algorithm which can make predictions on limited data is an important issue. A new machine learning algorithm called support vector machines (SVMS) recently developed by Vladimir Vapnik and his coworkers enables a high level of generalization with finite high-dimensional data. The improved generalization in comparison with standard methods like neural networks is due mainly to the following characteristics of the method. The input data space is transformed into a high-dimensional feature space using a kernel function, and the learning problem is formulated as a convex quadratic programming problem with a unique solution. In this paper the authors have applied the SVM method for data-based state ...

Energy Technology Data Exchange (ETDEWEB)

The American National Standard, `Nuclear Criticality Safety in Operations with Fissionable Materials Outside Reactors` ANSI/ANS-8.1- 1983 provides guidance for the nuclides [sup 233]U, [sup 235]U, and [sup 239]Pu These three nuclides are of primary interest in out-of-reactor criticality safety since they are the most commonly encountered in the vast majority of operations. However, some operations can involve nuclides other than `U, `U, and `Pu in sufficient quantities that their effect on criticality safety could be of concern. The American National Standard, `Nuclear Criticality Control of Special Actinide Elements` ANSI/ANS-8.`15-1983 (Ref 2), provides guidance for fifteen such nuclides.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

GaP and AlGaP were grown by atmospheric pressure OMVPE on GaP substrates using tertiarybutylphosphine as the phosphorus source. A specular surface of GaP was obtained on a (100) just-oriented surface at 700deg C. Hazy but uniform thickness AlGaP was obtained. The growth efficiency for GaP was 1.2x10{sup 3}{mu}m/mol and that for AlGaP was 2.1x10{sup 3}{mu}m/mol.4.2 K photoluminescence showed near-edge emission from both GaP and AlGaP. (orig.).

International Nuclear Information System (INIS)

Using standard microfabrication techniques, it is now possible to construct devices that appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date, the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high-frequency operation, have not been tested in detail. We present high-accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single ac-modulated gate at 340 MHz driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the ...

Energy Technology Data Exchange (ETDEWEB)

An internal-tin-process Nb{sub 3}Sn conductor, which is a prototype for the International Thermonuclear Experimental Reactor (ITER), was tested. The axial strain measurements were made over a range of magnetic fields from 15 to 25 T. The conductor specifications are given in Table 5, and the measured data are presented in Table 6 and Figs. 8 through 10. The I{sub c} and J{sub c} values are based on an electric field criterion (E{sub c}) of 2 {mu}V/cm. The results show a zero-strain 15 T value of J{sub c} (referred to the noncopper area) which was 0.50 GA/m{sup 2} and a peak (strain-free) J{sub c} value of 0.55 GA/m{sup 2}. The irreversible strain limit was reasonably high, 0.92%, and the compressive prestrain was 0.28%. The sample did not fracture until 1.09% strain.

International Nuclear Information System (INIS)

Atomic Energy Regulatory Board carries out the regulatory review of the reactor physics design, commissioning and operational aspects through Project Design Safety Committee and Specialist Group of reactor physicists with wide experience in the design, commissioning and operational safety review of NPPs. TAPP-3 and 4 PHWRs, being the first indigenous design of 540 MWe Units, are quite different than the standard 220 MWe PHWRs. The safety review of reactor physics design was quite complex, as majority of the systems were new. The Reactor Physics Specialist Group carried out extensive safety review of 540 MWe PHWR reactor physics design and made significant contributions of design modifications and improvements in the operational procedures. Some salient contributions include: Monitoring the core during bulk addition of moderator without the availability of ...

Energy Technology Data Exchange (ETDEWEB)

The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Sudden changes in the temperature of flowing liquids can result in transient buoyancy forces which strongly impact the flow hydrodynamics via flow stratification. These effects have been studied for the case of potential flow of stratified liquids to line sinks, but not for moderator flow in SRS reactors. Standard codes, such as TRAC and COMMIX, do not have the capability to capture the stratification effect, due to strong numerical diffusion which smears away the hot/cold fluid interface. A related problem with standard codes is the inability to track plumes injected into the liquid flow, again due to numerical diffusion. The combined effects of buoyant stratification and plume dispersion have been identified as being important in operation the Supplementary Safety System which injects neutron-poison ink into SRS reactors to provide safe shutdown in the event of safety rod failure. The MODFLOW code ...

International Nuclear Information System (INIS)

Reactor Control Division (RCnD) has been one of the main designers of safety and safety related systems for power reactors. These systems have been built using in-house developed hardware. Since the present set of hardware was designed long ago, a need was felt to design a new family of hardware boards. A Working Group on Electronics Hardware Standardization (WG-EHS) was formed with an objective to develop a family of boards, which is general purpose enough to meet the requirements of the system designers/end users. RCnD undertook the responsibility of design, fabrication and testing of boards for embedded systems. VME and a proprietary I/O bus were selected as the two system buses. The boards have been designed based on present day technology and components. The intelligence of these boards has been implemented on FPGA/CPLD using VHDL. This paper outlines the various boards that have been developed with a brief ...

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

International Nuclear Information System (INIS)

It has recently been shown that the superconducting properties of Nb-base A-15 compounds, A_3B, are severely degraded when exposed to high-energy (E>1 MeV) neutron irradiation at ambient reactor temperatures. In each case, superconducting transition temperatures, Tsub(c), and the Bragg Williams order parameters, S, were observed to decrease steadily with irradiations in excess of 10"1"8 nvt. During irradiation the A-15 structure is retained and subsequent isothermal annealing restores almost completely the compound's original Tsub(c) value. In this letter a correlation between B atom diameter and the recovery rates of Tsub(c) for the irradiated materials Nb_3Ge, Nb_3Ga, Nb_3Al and Nb_3Sn is reported. (Auth.).

International Nuclear Information System (INIS)

During the last ten years, the U.S. Nuclear Regulatory Commission and the U.S. nuclear utilities have been developing methods and requirements for risk-informed applications making use of probabilistic risk assessments (PRA) of nuclear power plants. Early in this process, it became clear that the existing PRAs were done with different objectives and methodologies by different analysts. For uniformity and consistency in future risk-informed applications, industry consensus standards on probabilistic risk assessments were deemed to be essential. Currently, the following standards have been published or under preparation: - ASME RA-S-2002: 'Standard for Probabilistic Risk Assessment for Nuclear Power Plant Applications', Addendum C, March 2005. - ANSI/ANS-58.21-2003 'External-Events PRA Methodology' March 2003. - ANS-58.22 'Low Power and Shutdown PRA Standard'. - ANS-58.23 'Fire PRA Methodology ...

International Nuclear Information System (INIS)

More than twenty years after commencing commercial operation in 1983, Wolsong Unit 1(W1- NPP), the first CANDU Pressurized Heavy Water Reactor (PHWR) in Korea, has been undergoing refurbishment. Safety analyses were required to evaluate the safety of W1-NPP because significant amount of equipment has been refurbished. To evaluate the effectiveness of W1-NPP after these upgrades, new safety analyses were performed using the same technical standards of Wolsong Units 2, 3, 4 (W234-NPP) for Design Basis Accidents (DBA). The refurbished W1- NPP is expected to be licensed for full power operation based on the verified safety analysis results that are obtained by using the upgraded computer codes and newly adopted technical standards of W234-NPP

Energy Technology Data Exchange (ETDEWEB)

This report presents the results of a study dealing with the homogeneous recycling of either Pu or Pu+Np or Pu+Np+Am or Pu+Np+Am+Cm in PWRs using MOX-UE fuel, i.e. standard MOX fuel with a U235 enriched uranium support instead of the standard tail uranium (0.25%) for standard MOX fuel. This approach allows to multirecycle Pu or TRU (Pu+MA) as long as U235 is available, by keeping the Pu or TRU content in the fuel constant and at a value ensuring a negative moderator void coefficient (i.e. the loss of the coolant brings imperatively the reactor to a subcritical state). Once this value is determined, the U235 enrichment of the MOX-UE fuel is adjusted in order to reach the target burnup (51 GWd/t in this study).

Science.gov (United States)

We report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb active regions. These lasers have multi-stage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is an electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in conventional horizontal reactors. A single stage, optically pumped laser yielded improved power (greater than 650 mW/facet) at 80K and 3.8um. A multi-stage 3.8-3.9um laser structure operated up to T=170K. At 80K, peak power greater than 100mW and a high slope- efficiency were observed in gain guided lasers.

International Nuclear Information System (INIS)

Heat transfer tubes of a primary pressurized water cooled (PPWC) in the high temperature engineering test reactor (HTTR) form the reactor pressure boundary of the primary coolant, therefore are important from the viewpoint of safety. To establish inspection techniques for the heat transfer tubes of the PPWC, an automatic inspection system was developed. The system employs a bobbin coil probe, a rotating probe for eddy current testing (ECT) and a rotating probe for ultrasonic testing (UT). Nondestructive test of a half of the heat transfer tubes of the PPWC was carried out by the automatic inspection system during reactor shutdown period of the HTTR (about 55% in the maximum reactor power in this paper). The nondestructive test results showed that the maximum signal-to-noise ratio was 1.8 in ECT. Pattern and phase of Lissajous wave, which were obtained for the heat transfer tube of the PPWC, were ...

Energy Technology Data Exchange (ETDEWEB)

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. ...

International Nuclear Information System (INIS)

... power reactors pressure tube reactors reactors THERMAL REACTORS.

Energy Technology Data Exchange (ETDEWEB)

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

Science.gov (United States)

Excitonic transitions in metalorganic vapor phase epitaxially grown In[sub [ital x

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations that incorporate free energy of the vapor phase in order to determine the initial growth process of cubic GaN on GaN (001)-(4x1). The results suggest that a N-adsorbed structure appears at the initial growth stage and then Ga adsorbs on the N-adsorbed GaN (001)-(4x1) surface. Considering this process, we performed Monte Carlo simulations. The results suggest that the maximum point of Ga coverage after supplying a Formula Not Shown monolayer of atoms shifted toward a Ga-rich condition from V/III=1.0.

Energy Technology Data Exchange (ETDEWEB)

Analyzing various SBLOCA with high pressure safety injection (HPSI) at VVER-440/213, we met a surprising phenomenon - a 'natural' circulation post SG heat transfer reversal. This is not usual, because normal natural circulation (NC) in primary circuit is connected with positive heat transfer at SG. If there is reverse heat transfer at SG (as soon as the break enthalpy outflow is sufficient for removal of reactor decay heat), it should obstruct any natural circulation. The question was, what is the driving force of this 'non-standard natural circulation'. After all we revealed that force - it is the density difference between the colder water in reactor downcomer (cold water from HPSI) and warmer water in inner reactor (lower plenum, core, upper plenum). This phenomenon could be confusing for operating personal, because there would be an opposite temperature difference ...

International Nuclear Information System (INIS)

Tarapur Atomic Power Station Unit-4 is first 540 MWe pressurized heavy water reactor in India. It achieved criticality on 06th March 2005 and then operated at full power i.e 500 MWe. Radiation workers during the normal operation and reactor shutdown are exposed to radiation field. The control of dose rates and the collective dose of the radiation workers is most important for the best performance of the reactor. Experience gained during the operation of the 220 MWe reactors has shown that the Moderator system, primary heat transport system, annulus gas system and moderator cover gas system are the main systems contributing to the dose rate and collective dose. In order to identify the radio nuclides contributing to the radiation field, study was undertaken at TAPS Unit-4. Various samples from the Moderator, primary heat transport system, annulus gas system and moderator cover gas system were collected ...

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)b2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed ...

Energy Technology Data Exchange (ETDEWEB)

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs ...

Energy Technology Data Exchange (ETDEWEB)

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

Energy Technology Data Exchange (ETDEWEB)

We discuss the initial development of a concentrator device based on the GaInP/GaAs monolithic tandem cell structure. The very high one-sun efficiency of this device, coupled with its characteristic low operating current, make this a promising candidate for use under high concentration. Test results for a prototype device are presented. This device achieves an efficiency of 29.5% at a concentration of 102 suns.

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

New standard catalogs for piping, supports, and valves have been introduced by Kraftwerk Union (KWU) for the first time in its Convoy series of PWR plants. These catalogs, underlying regulatory codes, and newly developed KWU specifications are described. Feedwater and main steam piping systems within the containment, including pipe supports and valves, are used to demonstrate the high quality level of piping technology achieved in the Federal Republic of Germany. Such quality standards ensure the integrity of single components as well as of the entire system, so that, under certain conditions, pipe whip restraints against postulated breaks have become unnecessary. The quality aspects apply basically for both PWR and BWR plants of KWU.

CERN Document Server

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2p sub 3 sub / sub 2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga sub 2 O sub 3 powder were used. A separate study aiming the identification of the GaAs ...

Energy Technology Data Exchange (ETDEWEB)

By means of neutron diffraction, using the standard polycrystalline sample of Al{sub 2}O{sub 3}, measurements on three (of four spectrometers) already installed in the front of horizontal channels of MARIA reactor have been performed. Basing on these experiments as well as on activation measurements carried out earlier, the fluxes of monoenergetic neutrons have been estimated. These experiments allowed to determine (for a given geometry and kind of monochromators chosen) the resolution efficiency of instruments and high order contamination in the reflected beam. With the help of polycrystalline vanadium and TbBr{sub 3} sample, the possibility of studies using the inelastic scattering process have been tested. (author) 7 refs, 15 figs, 7 tabs

International Nuclear Information System (INIS)

For neutron radiography (NR), photographic techniques have been mainly used for many years. To observe a dynamic event and to test many samples, the real-time neutron radiography (i.e. neutron television - NTV) system has been introduced at the E-2 experimental tube of the Kyoto University Research Reactor (KUR). The NTV system has been practically applied to penetrating the side plates containing boron burnable poison to test MTR type reactor fuel, to investigation of moving objects and to neutron computed tomography (NCT). New approaches using some advanced neutron converters, a high sensitive and resolution TV camera and a high performance image processing system are being undertaken for standard indicators, visualization on air-water two-phase flow, NCT and so on. (author).

International Nuclear Information System (INIS)

A major initiative to develop and irradiate a long-life, mixed-oxide fuel system in the Fast Flux Test Facility (FFTF) has been implemented by Westinghouse Hanford Company for the US Department of Energy. The FFTF, shown in Figures 1 and 2, is a 400 megawatt thermal, fast liquid metal reactor that tests liquid metal, space and fusion fuels and materials. The new fuel system, called the Core Demonstration Experiment (CDE) demonstrates the capability of achieving a three- to four-year life in a prototypic heterogeneous reactor environment under prototypic power and temperature conditions. This fuel system will greatly increase fuel performance and lifetime from the current standard FFTF driver fuel. New design features, fabrication development, CDE assembly fabrication, and irradiation status have been described.

Energy Technology Data Exchange (ETDEWEB)

Magneto-striction and magnetic form factors in 5f itinerant antiferromagnets UNiGa{sub 5} and UPtGa{sub 5} are studied by means of neutron scattering. Remarkable magneto-striction was observed around T{sub N}, indicating large spin-orbit coupling in the itinerant system. The orbital magnetic moment is found to be strongly suppressed due to the hybridization of uranium 5f with Ga-4p electron.

International Nuclear Information System (INIS)

As for No.2 plant in Sendai Nuclear Power Station, which is the fourth nuclear power generation facilities in Kyushu Electric Power Co., Inc., all works have been completed, and at present, the final trial operation is under way. In No.2 plant, many new techniques for raising the reliability and safety, improving the maintainability and reducing radiation exposure were introduced on the basis of the operation experience of PWRs obtained so far, similarly to No.1 plant. In this paper, the main items of the new techniques related to the design and construction of the plant are reported. No. 2 plant is a first improved and standardized plant having the thermal output of 2660 MW for standard three-loop PWRs, and the rated power output was set at 890 MW. As for the turbine, TC6F-40 in was adopted. As the improved design, a large reactor containment vessel, 17 x 17 type 9-grid fuel, improved steam generators, a ...

International Nuclear Information System (INIS)

This paper gives an overview of a multiyear joint research program being conducted at the University of New Mexico (UNM) with support from Sandia National Laboratories and GA Technologies. This research focuses on heat removal and fluid dynamics in flow regimes characterized by low pressure and low Reynolds number. The program was motivated by a desire to characterize and analyze cooling in a broad class of TRIGA-type reactors under: (a) typical operating conditions, (b) anticipated, new operating regimes, and (c) postulated accident conditions. It has also provided experimental verification of analytical tools used in design analysis. The paper includes descriptions of the UNM thermal-hydraulics test facility and the experimental test sections. During the first two years experiments were conducted using single, electrically heated rod in water and air annuli. This configuration provides an observable and serviceable simulation of a fuel rod ...

International Nuclear Information System (INIS)

The effect of high-energy neutron irradiation (E greater than 1 MeV) at ambient reactor temperatures on the superconducting properties of a variety of superconducting compounds is reported. The materials studied include the A-15 compounds Nb_3Sn, Nb_3Al, Nb_3Ga, Nb_3Ge and V_3Si, the C-15 Laves phase HfV_2, the ternary molybdenum sulfide Mo_3Pb/sub 0.5/S_4 and the layered dichalcogenide NbSe_2. The superconducting transition temperature has been measured for all of the above materials for neutron fluences up to 5 x 10"1"9 n/cm"2. The critical current for multifilamentary Nb_3Sn has also been determined for fields up to 16 T and fluences between 3 x 10"1"7 n/cm"2 and 1.1 x 10"1"9 n/cm"2.

International Nuclear Information System (INIS)

The multi-frequency binary sequence experimental technique has been implemented at the Fast Flux Test Facility for routine surveillance activities. The frequency content of the standard rod-movement sequence has been shown to be sufficient to normalize the data at moderate frequencies. This obviates the need for auxiliary calibration measurements and provides the reactivity worth of the test control rod. Analyses of a series of tests conducted in 1986 illustrate that the rod worths inferred from the tests are consistent with zero-power measurements. Also, the dependence of the prompt feedback time constant on reactor conditions was determined.

Energy Technology Data Exchange (ETDEWEB)

Absolute fission rate measurements using modified National Bureau of Standards fission chambers were performed in the Fast Flux Test Facility at two core locations for isotopic deposits of {sup 232}Th, {sup 233}U, {sup 235}U, {sup 238}U, {sup 237}Np, {sup 239}Pu, {sup 240}Pu, and {sup 241}Pu. Monitor chamber results at a third location were analyzed to support other experiments involving passive dosimeter fission rate determinations.

Energy Technology Data Exchange (ETDEWEB)

The stability-enchancing two-step (SETS) method has been used successfully in the Transient Reactor Analysis Code (TRAC) for several years. The method consists of a basic semi-implicit step combined with a stabilizer step that, taken together, eliminate the material Courant stability limit associated with standard semi-implicit numerical methods. This approach toward stability requires significantly fewer computational operations than a fully implicit method, but currently maintains the first-order accuracy in space and time of its semi-implicit predecessors.

Energy Technology Data Exchange (ETDEWEB)

ORNL has conducted a Nuclear Power Options Viability Study for the Department of Energy. That study is primarily concerned with new technology which could be developed for initial operation in the 2000 to 2010 time frame. Such technology would have to compete not only with coal options but with incrementally improved commercial light-water-reactors. This survey reported here was undertaken to gain an understanding of the nuclear commercial technology likely to be offered in the late 1980s and perhaps beyond. The three US vendors actively marketing NSSSs are each developing a product for the future which they expect to be more reliable, more maintainable, more economical, and safer than the present plants. These are all essentially 3800-MW(t) designs, although all are studying smaller plants. They apparently will be off offered as standard prelicensed designs with much larger scope than earlier NSSS offerings, with the possibility of firm ...

International Nuclear Information System (INIS)

... fast reactors fbr type reactors fuels liquid metal cooled reactors materials nuclear

International Nuclear Information System (INIS)

Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI_3 or BBr_3 discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates (>6000 Angstrom min"-"1) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI_3 or BBr_3 content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO_2 and SiN_x of #>=#8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and AlInP. copyright 1998 American Vacuum Society.

International Nuclear Information System (INIS)

This paper reports that the excess of U.S. electrical generating capacity which has existed for the past 15 years is coming to an end as we enter the 1990s. Environmental and energy security issues associated with fossil fuels are kindling renewed interest in the nuclear option. The importance of these issues are underscored by the National Energy Strategy (NES) which calls for actions which are designed to ensure that the nuclear power option is available to utilities. Utilities, utility associations, and nuclear suppliers, under the leadership of the Nuclear Power Oversight Committee (NPOC), have jointly developed a 14 point strategic plan aimed at establishing a predictable regulatory environment, standardized and pre-licensed Advanced Light Water Reactor (ALWR) nuclear plants, resolving the long-term waste management issue, and other enabling conditions. GE is participating in this national effort and GE's family of advanced nuclear power ...

Energy Technology Data Exchange (ETDEWEB)

Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a ...

Energy Technology Data Exchange (ETDEWEB)

Sudden changes in the temperature of flowing liquids can result in transient buoyancy forces which strongly impact the flow hydrodynamics via flow stratification. These effects have been studied for the case of potential flow of stratified liquids to line sinks, but not for moderator flow in SRS reactors. Standard codes, such as TRAC and COMMIX, do not have the capability to capture the stratification effect, due to strong numerical diffusion which smears away the hot/cold fluid interface. A related problem with standard codes is the inability to track plumes injected into the liquid flow, again due to numerical diffusion. The combined effects of buoyant stratification and plume dispersion have been identified as being important in operation of the Supplementary Safety System which injects neutron-poison ink into SRS reactors to provide safe shutdown in the event of safety rod failure. The MODFLOW code ...

International Nuclear Information System (INIS)

It is very well known that the CANDU reactor has positive Coolant Void Reactivity (CVR), which is most important criticisms about CANDU. The most recent innovations based on using a thin absorbent Hafnium shell in the central bundle element were successfully been applied to the Advanced CANDU Reactor (ACR) project. The paper's objective is to analyze elementary lattice cell effects in applying such methods to reduce the CVR. Three basic fuel designs in their corresponding geometries were chosen to be compared: the ACR-1000TM, the RU-43 (developed in INR Pitesti) and the standard CANDU fuel. The bundle geometry influence on void effect was also evaluated. The WIMS calculations proved the Hafnium absorber suitability (in the latest 'shell design') to achieve the negative CVR target with great accuracy for the ACR-1000 fuel bundle design than for the other two projects. (authors)

Science.gov (United States)

Room-temperature continuous-wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 /sup 0/C for a device with an 8-..mu..m-wide and a 250-..mu..m-long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T/sub 0/ was 138 K under cw operation. The wafer with the MQW structure composed of 100-A-thick GaInP wells and 40-A-thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.

International Nuclear Information System (INIS)

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

Science.gov (United States)

Useful bipolar transistor action over the temperature range from -195 to 550 /sup 0/C has been demonstrated for heterojunction bipolar transistors in the GaP/AlGaP chemical system. This represents the highest temperature at which useful bipolar solid-state transistor action has ever been demonstrated in any material. Improvements in the materials technology and in the understanding of device characteristics at high temperatures were essential to the successful fabrication of these devices. These results demonstrate that the GaP/AlGaP heterojunction system is an excellent technology for active electronic components operated at high temperatures.

Energy Technology Data Exchange (ETDEWEB)

Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.

International Nuclear Information System (INIS)

The band offsets and subband levels in a double quantum well layer for a 660 nm-Ga_0_._4In_0_._6P/(Al_0_._5Ga_0_._5)_0_._5In_0_._5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical calculation of the Schroedinger equation for the layer structure by varying the conduction band offset and compared with the measured photoreflectance spectra. The conduction band offset ratio is determined to be 0.5+0.03. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Energy Technology Data Exchange (ETDEWEB)

Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.

International Nuclear Information System (INIS)

One of the main points for the inherent safety of a pebble bed high temperature reactor (HTR) is to guarantee the safe removal of the after-heat in case of a break-down of all active cooling systems like heat-exchangers or liner-cooling. This will be necessary because it is well known today that graphite pebble bed fuel elements stay intact, if the accident temperature is below 1600 deg. C. Therefore the heat must be taken out of the reactor system by passive, natural law heat-transfer mechanism so that the maximum fuel temperature stays below the specified limit. Today medium-sized HTRs with a power of 750 MW_t_h and more (TGTR-300, HTR 500) reach temperatures of more than 2400 deg. C in small parts of the core in such hypothetical accidents. A possible way to realize the inherent safe heat removal in advanced medium-sized HTRs is to change the form of the core. Instead of employing the standard cylindrical geometry a ...

International Nuclear Information System (INIS)

Large-scale decommissioning of Russian nuclear-powered submarines (NPS) and their utilization prospects gave rise to numerous complicated scientific and technical, as well as economic, problems. Problems of handling of radioactive equipment from the reactor compartments (RC) are among the vital ones, arousing a growing concern with the public. Without solution of the problems the processes of NPS utilization can not be considered completed. It involves potential hazard, for the environment both from NPS being paid up (temporal on-float storage) with unloaded spent nuclear fuel (SNF), and RC, cut from submarine hull, containing highly radioactive equipment and materials but no SNF. Diverse variations of the concept of reactor compartment handling of NPS subject to, utilization are possible, but, in principle, there are essentially two variants: (1) RC utilization directly in the course of NPS utilization, envisaging removal of radioactive ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

... dpg-tagungen.de Dresden (Germany) 27-31 Mar 2006 0420-0195 VDPEAZ

Energy Technology Data Exchange (ETDEWEB)

This paper discusses design considerations for the recently introduced GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140--180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. The authors focus on the issues of grid design, top-cell thickness, and antireflectance coat. They also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.

International Nuclear Information System (INIS)

Russian 1997 p. 266-267 Russian Federation Ushakova, GA

International Nuclear Information System (INIS)

... angiotensin gallium 67 lungs lysozyme patients sarcomas beta decay

Science.gov (United States)

Heterostructures based on AlGaInP alloy compounds are very attractive for visible semiconductor lasers, heterojunction bipolar transistors (HBTs), and high-electron-mobility transistors (HEMTs) lattice matched to GaAs substrates. Several wet etching solutions for AlGaP of different compositions have been studied. Al{sub 0.5}Ga{sub 0.5}P is found to etch in HF, H{sub 3}PO{sub 4}, hyphosphorous acid (HOPH{sub 2}:O), HCl, KOH, and 1% Br{sub 2}-methanol (MeOH). Etching of Al{sub 0.5}Ga{sub 0.5}P in HCl is reaction limited with an activation energy of {approximately}54.4 kJ/mol. At fixed conditions, the etch rates of Al{sub x}Ga{sub 1{minus}x}P vary exponentially with x in HF and HCl, while in 1% Br{sub 2}-MeOH and mixtures of HCl and HNO{sub 3} the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for ...

Energy Technology Data Exchange (ETDEWEB)

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 {mu}m In{sub x}Al{sub y}Ga{sub 1-x-y}N alloy grown on 0.5-1.0 {mu}m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In{sub x}Al{sub y}Ga{sub 1-x-y}N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al ...

UK PubMed Central (United Kingdom)

Metabolism of [¹⁴C]gibberellin (GA) A₁₂ (GA₁₂) and [¹⁴C]gibberellin A₁₂-aldehyde (GA₁₂-aldehyde) was examined in cotyledons and seed...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

ScienceCinema

...english ...

International Nuclear Information System (INIS)

The information of phase transformation is attained by in situ XRD experiments leading to the knowledge of topological threshold in GeS2-Ga2S3 glasses. The turning point of phase transformation behavior is demonstrated to be glasses containing 14-15 mol% Ga2S3. To interpret it a network demixing model is further improved and proposed for the structure of these ternary or quasi-binary chalcogenide glasses. For the nearest-neighbor coordination environment of glass with a transitional composition of 85.7 mol% (6/7) GeS2.14.3 mol% (1/7) Ga2S3, six-coordinated [S3Ga-X-GaS3] units (X=S or None) are well isolated by the [GeS4] structures, which contributes to the decreasing of precipitation of Ga2S3 crystals in (100-x)GeS2-xGa2S3 (x?14.3) glasses corresponding to the experimental evidence of the phase transformation behavior. This scenario of intermediate-range ...

Energy Technology Data Exchange (ETDEWEB)

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

Energy Technology Data Exchange (ETDEWEB)

With the end of the cold war the United States, Russia, and other countries have excess plutonium and other materials from the reductions in inventories of nuclear weapons. The United States Academy of Sciences (NAS) has recommended that these surplus fissile materials (SFMs) be processed so they are no more accessible than plutonium in spent nuclear fuel (SNF). This spent fuel standard, if adopted worldwide, would prevent rapid recovery of SFMs for the manufacture of nuclear weapons. The NAS recommended investigation of three sets of options for disposition of SFMs while meeting the spent fuel standard: (1) incorporate SFMs with highly radioactive materials and dispose of as waste, (2) partly burn the SFMs in reactors with conversion of the SFMs to SNF for disposal, and (3) dispose of the SFMs in deep boreholes. The US Government is investigating these options for SFM disposition. A new method for the disposition of SFMs ...

International Nuclear Information System (INIS)

In an HTR plant high temperature components of Alloy 800 materials are subjected to temperatures from about 550 to 850degC in the long term; higher temperatures may occur in the short term. Thus the creep and stress-rupture parameters govern the design of these components. Since in recent years the scope of experimental data available for Alloy 800 materials has considerably increased, a new evaluation of the creep and creep-rupture properties was performed using a data bank computer. The relationships between the characteristics of the creep and creep-rupture behaviour and the metallurgical parameters were investigated by multilinear regression analyses. On the basis of the results of these analyses and after discussion in material expert committees new material specifications were determined for different types of Alloy 800. They were included into the draft standards DIN 17459 and DIN 17460 under the material standard nos. 1.4958, 1.4958 Rk ...

International Nuclear Information System (INIS)

The seismic analysis of nuclear island of Daya Bay Nuclear Power Plant (NPP) was just in accordance with the approaches in RCC-G standard for the model M310 in France, in which the simplified impedance matrix method was employed for the consideration of soil's function. In this paper the more sophisticated 3D half-space continuum impedance method based on the Green functions is used to analyze the function of soil. In addition, multi-group of input time histories was used in the seismic response analysis in the existing design and their average of responses for each group was taken as the design basis. The same multi-group of input time histories was used in the seismic response analysis in this study, but the average and enveloped value of responses for each case are calculated respectively to account for the uncertainty of input motions. Focused on the above two issues, the seismic responses of the reactor building are calculated and the ...

Energy Technology Data Exchange (ETDEWEB)

The procedure and operation-by-operation methods of the quality control of structural and fuel materials, mixed fuel pellets of UO/sub 2/-PuO/sub 2/, fuel element cans made of the AISI-316 steel and ready fuel elements are described as well as spacer wires (steel AISI-316), cases of fuel assemblies (FA) and completed FAs. The methods are used in manifacturing fuel elements and FAs for the FFTF reactor. The RDT standards that regulate the structure and functioning of the system of fuel element and FA production management are outlined. Destructive analytical methods characterized by sufficient accuracy but low productivity are noted to represent a considerable share of operations. Some specialized means of nondestructive testing are developed, such as the gauge to measure the total plutonium content in a fuel element, neutron radiography deVice and a laser gauge to measure the FA dimensions. The experience gained served as a basis for designing ...

International Nuclear Information System (INIS)

To obtain reactor physics parameters for high-moderation mixed-oxide (MOX) cores, Nuclear Power Engineering Corporation (NPEC), the French Atomic Commission (CEA), and their industrial partners have conducted a MOX core physics experimental program called MISTRAL with the EOLE critical facility of the Cadarache research center. This program consists of four high-moderation cores and was successfully completed in July 2000. This paper describes the analysis results of MISTRAL-3 that is a homogeneous full MOX cylindrical core (H/HM = 6.2) with an 80-cm height and a 59-cm diameter consisting of 1388 standard pressurized water reactor-type MOX fuel rods of 7.0 wt% plutonium-enrichment in a square pitch of 1.39 cm. NPEC has been analyzing the experimental results by using the SRAC and MVP code systems. SRAC and MVP calculate the nuclear core characteristics correctly for the high-moderation MOX core MISTRAL-3. No apparent trend ...

International Nuclear Information System (INIS)

Agricultural practices frequently cause the development of a soil compacted layer below the surface. These compacted layers restrict the root penetration into deeper layers of soil, in search for water. It is proposed to monitor, using Non Destructive Test, the roots growth due to the planting of standard seeds in different agricultural soils, in function of their compactness and humidity. It will be used the neutrons beams derived from an irradiation channel called J-9 of the Reactor Argonauta (IEN/CNEN), so that the neutron radiographic images of the soil-plant system can be obtained. Each root can be evaluated for its ability to penetrate into compacted soil layers; this fact would mean an optimization of agricultural harvests. (author)

International Nuclear Information System (INIS)

The basic Quality Assurance Program Requirements standard for the National Waste Terminal Storage Program has been developed primarily for nuclear reactors and other fairly well established nuclear facilities. In the case of waste isolation, however, there are many ongoing investigations for which quality assurance practices and requirements have not been well defined. This paper points out these problems which require supplementary requirements. Briefly these are: (1) the language barrier, that is geologists and scientists are not familiar with quality assurance (QA) terminology; (2) earth sciences deal with materials that cannot be characterized as easily as metals or other materials that are reasonably homogeneous; (3) development and control of mathematical models and associated computer programs; (4) research and development.

CERN Document Server

This paper presents three non-linear asymptotic observers corresponding to three examples of engineering interest: a chemical reactor, a non-holonomic car, and an inertial navigation system. For each example, the design is based on physical symmetries. This motivates the theoretical development of invariant observers, i.e, symmetry-preserving observers. We consider an observer to consist in a copy of the system equation and a correction term, and we give a constructive method (based on the Cartan moving-frame method) to find all the symmetry-preserving correction terms. They rely on an invariant frame (a classical notion) and on an invariant output-error, a less standard notion precisely defined here. For each example, the convergence analysis relies also on symmetries consideration with a key use of invariant state-errors. For the non-holonomic car and the inertial navigation system, the invariant state-errors is shown to obey an autonomous ...

International Nuclear Information System (INIS)

Fuel Management at the Fast Flux Test Facility (FFTF) involves more than just the usual ex-core and in-core management of standard fuel and non-fuel components between storage locations and within the core since it is primarily an irradiation test facility. This mission involves testing an ever increasing variety of fueled and non-fueled experiments, each having unique requirements on the reactor core as well as having its own individual impact on the reload design. This paper describes the fuel management process used by the Westinghouse Hanford Company Core Engineering group that has led to the successful reload design of nine operating cycles and the irradiation of over 120 tests.

International Nuclear Information System (INIS)

The authors have developed a high-sensitivity real-time neutron radiography (NR) system by the use of the low power reactor of Kinki University. The system was constructed with a high efficiency neutron-photon converter, an image intensifier and a SIT TELEVISION camera. Some digital image processing techniques were applied for improving the quality of the real-time neutron images. By the use of this system, dynamic neutron imaging was performed successfully under the condition of a weak neutron field that was about two orders of magnitude lower than that of the standard NR system. The neutron flux, calculated from the fluctuation of the neutron response of the images, was nearly equal to the value measured by the foil activation method. From this fact, the efficiency for the neutron detection of the imaging system was estimated to be almost 100%. For the purpose of developing a system with higher sensitivity, consideration of neutron statistics ...

International Nuclear Information System (INIS)

In view of the importance of the material Alloy 800 in high-temperature reactor plants (HTR), a material data bank was established which is used for statistical evaluation of mechanical and physical material behaviour. Based on investigations on the interconnection between the mechanical properties at high temperatures and the metallurgical parameters, different types of Alloy 800 were specified in compliance with the component requirements. In addition, aspects of corrosion and toughness behaviour were taken into consideration. The specifications and strength characteristics for the different variants of Alloy 800 were incorporated into draft DIN standards after discussion and approval in expert committees. Further important characteristics of the mechanical and physical material behaviour were summarized in HTR material data sheets so as to furnish an improved basis for the design and stress analyses of Alloy 800 components. (orig.).

International Nuclear Information System (INIS)

Nuclear facilities of the Department of Energy (DOE) located at the Savannah River Site must comply with DOE orders as implemented at DOE-SR. The DOE orders cover safety criteria, design criteria, environmental protection, occupational health and safety. The program applies to DOE and contractors. In this section, the Nuclear Regulatory Commission (NRC) criteria and industry codes and standards are addressed as well as DOE orders. Specific DOE orders which add additional criteria have also been noted. A program for assessing and implementing contractor applicable DOE orders has been established. This program ensures that compliance is achieved through developing and implementing policies, programs, and procedures. The primary emphasis is placed on safe, efficient reactor restart and operation. DOE has classified orders applicable to restart as Level I, Category I while those applicable to post-restart are classified as Level I, Category II. ...

J-STORE (Japan)

Full Text Available

Science.gov (United States)

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a ...

CERN Document Server

An Introduction to the Standard Theory of Electroweak Interactions (3/4)

International Nuclear Information System (INIS)

Single-phased Sr3B2SiO8:Eu3+ phosphor was prepared by a solid-state method at 1020 oC. The luminescence spectra showed that Sr3B2SiO8:Eu3+ phosphor can be effectively excited by near ultraviolet light (393 nm) and blue light (464 nm). When excited at 393 or 464 nm Sr3B2SiO8:Eu3+ exhibited the main emission peaks at 611 and 620 nm, which resulted from the supersensitive 5D0#->#7F2 transition of Eu3+. The luminescence intensity of Sr3B2SiO8:Eu3+ at 611 and 620 nm reached the maximum when the doping content of Eu3+ was 4.5 mol%. Its chromaticity coordinates (0.646, 0.354) were very close to the NTSC standard values (0.67, 0.33). Thus, Sr3B2SiO8:Eu3+ is considered to be an efficient red-emitting phosphor for long-UV InGaN-based light-emitting diodes. - Highlights: ? Sr3B2SiO8:Eu3+ was synthesized using solid-state reaction method for the first time. ? The phosphor can be efficiently excited by the near-UV chips and gives strong red emission. ? ...

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...

Energy Technology Data Exchange (ETDEWEB)

Ga{sub 0.6}In{sub 0.4}P/(Al{sub 0.8}Ga{sub 0.2}){sub 0.4}In{sub 0.6}P strain-compensated multiple quantum wells (SCMQW) and Ga{sub 0.5}In{sub 0.5}P/(Al{sub 0.4}Ga{sub 0.6}){sub 0.5}In{sub 0.5}P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

Energy Technology Data Exchange (ETDEWEB)

Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

International Nuclear Information System (INIS)

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical ...

Energy Technology Data Exchange (ETDEWEB)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

International Nuclear Information System (INIS)

Two plasma chemistries, i.e., CH_4/H_2/Ar and Cl_2/Ar, were compared for the etching of InGaP, AlInP, and AlGaP under inductively coupled plasma (ICP) conditions. While the etching with CH_4/H_2/Ar discharges appears to be ion driven, Cl_2/Ar discharges showed an additional strong chemical enhancement. The highest etch rate (#approx#1 #mu#m/min) for InGaP was achieved at high ICP source power (#>=#750 W) with the Cl_2/Ar chemistry. Cl_2/Ar discharges provided very smooth surfaces in all three materials with root-mean-square roughness measured by atomic force microscopy around 2 nm. This result may be due to the efficient ion-assisted product desorption in this chemistry. The etched near-surface region of InGaP (#approx#100 Angstrom) with Cl_2/Ar maintained almost the same stoichiometry as that of the unetched control. By contrast, the CH_4/H_2/Ar plasma chemistry produced somewhat rougher surfaces ...

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

International Science & Technology Center (ISTC)

Investigation of Destruction Mechanisms in Reactor Steels and Alloys under Cycling Deformation

Energy Technology Data Exchange (ETDEWEB)

A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.

Energy Technology Data Exchange (ETDEWEB)

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

Science.gov (United States)

Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.

International Nuclear Information System (INIS)

The crystal field splitting of the "3H_4 ground state of the Pr ion in PrFeO_3 and PrGaO_3 has been investigated by inelastic scattering of the thermal neutrons. At several temperatures the transitions have been measured by TAS and TOF methods for polycrystalline PrFeO_3 and by the TOF method for polycrystalline PrGaO_3. Energy level schemes which are different for these materials are given. (author).

Science.gov (United States)

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

Science.gov (United States)

Continuous wave operation of an Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P /Ga/sub 0.52/In/sub 0.48/P /Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 ..mu..m and the threshold current was 55 mA for a diode with a nitride-insulated, 8-..mu..m-wide and 250-..mu..m-long stripe geometry.

Energy Technology Data Exchange (ETDEWEB)

We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and ...

Energy Technology Data Exchange (ETDEWEB)

We report measurements of the temperature dependence of the threshold current of GaAs, 1.3-..mu..m InGaAsP, and 1.5-..mu..m InGaAsP double heterostructure lasers using short electrical pulses. T/sub 0/approx.200 K is observed for all the lasers. These high T/sub 0/ values show that the carrier density at threshold does not increase rapidly with increasing temperature in any of the lasers studied and thus the observed low cw T/sub 0/ of InGaAsP lasers is primarily due to a decrease of the carrier lifetime at threshold with increasing temperature.

International Nuclear Information System (INIS)

A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.

Energy Technology Data Exchange (ETDEWEB)

We report the lasing characteristics of gain-guided AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes. At room temperature, continuous-wave operation is achieved over the wavelength range of 657--685 nm with the minimum threshold current at 670 nm. Devices with a 10-[mu]m diameter have threshold currents as low as 1.25 mA at room temperature (297 K) and 0.8 mA at 250 K. In addition, a single predetermined linear polarization state is found, independent of the lasing mode order and operating temperature.

Science.gov (United States)

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of ...

International Nuclear Information System (INIS)

(1976). USSR Lupin, VM Ramazanov, PE Tomskij Gosudarstvennyj Univ.

International Nuclear Information System (INIS)

The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)

Energy Technology Data Exchange (ETDEWEB)

A gain-guiding tapered stripe laser was fabricated using a Ga/sub 0.5/In/sub 0.5/P/(Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 /sup 0/C, an aspect ratio of about 2, and an astigmatism near 25 ..mu..m. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 /sup 0/C with a constant output power of 3 mW.

Energy Technology Data Exchange (ETDEWEB)

Radioactive wastes are generally classified into 3 type depending on their physical property: liquid, solid and gaseous type. State-of -the art concerning liquid waste treatment has already been published; KAERI/TR-1315/99. Solid wastes classification package and treatment method will be studied to effectively manage them during the practical decommissioning work. All of the spent fuel produced during the operation of the TRIGA Mark-2 and 3 have been transported to the US last year, 1998, according to the spent fuel management strategy set-up by the US government for the non-proliferation of nuclear energy. Solid wastes are mainly all equipment existing inside of the reactors, activated concrete among the bio-shielded concrete, pipes, pimps, resin filter and it's housings, heat-exchangers, liquid waste storage tanks, to radioactive waste storage treatment facilities and so on. Solid wastes are generally low-level. They are classified according to the ...

International Nuclear Information System (INIS)

One of the limiting contributors to the heat load constraint for a long term spent fuel repository is the decay of americium-241. A possible option to reduce the heat load produced by Am-241 is to eliminate it via transmutation in a light water reactor thermal neutron environment, in particular, by taking advantage of the large thermal fission cross section of Am-242 and Am-242m. In this study we employ lattice loading optimization techniques to define the loadings and arrangements of fuel pins with blended americium and uranium oxide in boiling water reactor bundles, specifically, by defining the incineration of pre-loaded americium as an objective function to maximize americium transmutation. Subsequently, the viability of these optimized lattices is tested by assembling them into bundles with Am-spiked fuel pins and by loading these bundles into realistic three-dimensional BWR core-wide simulations that model multiple reload cycles and ...

Energy Technology Data Exchange (ETDEWEB)

The effective fraction of delayed photoneutrons ({beta}{sup ph}) has been theoretically defined and experimentally determined in various different configurations of the LWR-PROTEUS critical facility. The peculiarity lies in the fact that the reactor has D{sub 2}O in only one of the four fuelled zones, thus D({gamma},n)H reactions take place mainly in this region. The work is divided into three parts. The first part is devoted to the description of the LWR-PROTEUS facility and to the measurements of {beta}{sup ph}. These experimental values are derived from standard inverse-kinetics analysis of neutron flux decay experiments for each of seven different configurations, with nine additional groups of neutron precursors to account for photoneutron effects. In the second part, the coupled neutron and gamma Boltzmann equations are reduced to exact point kinetics equations using the photon infinite-velocity approximation, and then to the point ...

International Nuclear Information System (INIS)

The paper introduces the disposal procedures of the old reactor pressure vessel head. Reactor pressure vessel (RPV) heads were replaced successfully in Daya Bay Nuclear Power Plant. The on-site treatment and disposal of replaced heads was thereafter implemented. This is the first time in China for large size radioactive article disposal. To guarantee the safety of old head treatment, issues of radiation protection have to be taken into account. Dose rate distribution of the old head surface and radioactivity were initially calculated according to the operation history and the neutron flux rate of the reactor. Shielding calculation and package design was thereafter worked out based on the data obtained from the old head, e.g. neutron flux, sorts of nuclides, radioactivity and dose rates. Shielding package was afterwards manufactured in special factories and transported to Daya Bay NPP site by truck and ship. The shielding ...

Energy Technology Data Exchange (ETDEWEB)

The emittance of aluminum components exposed to low-temperature aqueous solutions were required for thermal analysis of a Loss of Cooling Accident for the Savannah River Site production reactors. Experimental data for the thickness and emittance of oxide films formed under these conditions were collected and reviewed. Correlations were developed for the oxide film thickness and corresponding total hemispherical emittance. Film thickness and emittance were also measured for the specific conditions of interest in order to verify the predictions based on the literature data. After one year of exposure in 30deg C reactor moderator, the aluminum oxide film thickness is predicted to be 6.4 [mu]m[+-]10%; this value is relatively insensitive to exposure time. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected, and the ...

Energy Technology Data Exchange (ETDEWEB)

This chapter is concerned with standards and guidances for limiting radiation exposures. It is divided into three sections, each of which has several parts. Section 1: Ionizing Radiation -- Standards and Guidances Applicable to the Public: Part A, Radiation Protection Standards; Part B, Environmental Radiation Standards; Part C, Exempt Levels of Radioactivity; Part D, Protective Action Guides for Accidents. Section 2: Ionizing Radiation -- Standards Applicable to the Workplace. Section 3: Medical and Other Standards.

UK PubMed Central (United Kingdom)

The authors emphasize the importance of stability in biological standards and discuss the steps taken to ensure the stability of International Standards and the theoretical basis of the various stability...Full Text Available

Science.gov (United States)

... Standards Validation Group National Computer Systems Laboratory National Institute of Standards and Technology ... STANDARD. ... (See test Ci )i3A. ...

Science.gov (United States)

Thermal wet oxidations of GaP and Al{sub 0.4}Ga{sub 0.6}P at 650 degree sign C for various times have been performed. Comparisons are made on oxidation rates and post oxidation morphology. Transmission electron microscopy shows that when oxidizing GaP, polycrystalline monoclinic GaPO{sub 4}{center_dot}2H{sub 2}O forms without noticeable loss of phosphorus. Oxidation for 6 h or more leads to poor morphology resulting in cracks and detachment. A thickness expansion of about 2.5-3 times is noticed as a result of oxidation. In contrast, oxidized Al{sub 0.4}Ga{sub 0.6}P exhibits much better morphology without cracks or detachment from the substrate. The oxide has an almost amorphous-like microstructure. The oxidation process shows typical diffusion-limited reaction at long anneals. Preliminary work on the oxidation of AlP indicates that the reaction leads to formation of Al{sub 2}O{sub ...

International Nuclear Information System (INIS)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, ...

International Nuclear Information System (INIS)

The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is reported from pure and ...

Energy Technology Data Exchange (ETDEWEB)

Frequency response measurements are used to determine the carrier lifetime of 1.3-..mu..m InGaAsP buried heterostructure lasers between 1 mA and threshold. The data confirm previous results on the radiative and Auger recombination coefficients and reveal the presence of a nonradiative current which dominates at low currents and contributes 4 mA at threshold.

International Nuclear Information System (INIS)

The crystal structure, lattice strain due to the antiferromagnetic ordering, and magnetic form factor in the itinerant 5f compounds UTGa_5 (T=Ni, Pd, Pt) have been studied by neutron scattering. High-resolution powder diffraction revealed that the tetragonality of the U-Ga layers increases down to the series of the transition metal element T. The integrated intensities of the antiferromagnetic reflections can be well explained with the Neel-type structure for UNiGa_5, whereas UPtGa_5 has the antiferromagnetic stacking of the ferromagnetically ordered uranium moments in the c plane. In both compounds the uranium moments orient along the c axis with moments of 0.75(5) and 0.32(5) #mu#_B for UNiGa_5 and UPtGa_5, respectively. No magnetic peak could be observed in the powder diffraction pattern of UPdGa_5 due to the small magnetic moment less than the experimental ...

Energy Technology Data Exchange (ETDEWEB)

The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.

International Nuclear Information System (INIS)

The problem of fast wave plasma heating in reactor-torsatron at the ICRF range in scenarios, optimal for fusion reactor, is numerically studied.

International Nuclear Information System (INIS)

... californium 252 fftf reactor mockup power density reactor cores reactor noise

International Nuclear Information System (INIS)

... feasibility studies fftf reactor loss of flow reactor control systems reactor core

International Nuclear Information System (INIS)

The semiconducting compound CuGa_xIn_1_-_xSe_2 crystallizes in the chalcopyrite structure (space group Ianti 42d, Z=4). The X-ray powder data for x=1, 0.75, 0.6, 0.5, 0.4, 0.25 and 0.0 have been collected and it is found that the lattice parameters a and c and their ratio c/a vary linearly with x. Thus the composition of any chalcopyrite in the pseudo-binary system CuGaSe_2 and CuInSe_2 can be obtained from the accurate lattice parameters. The crystallite size determined from the (112) plane is minimum for x=0.50 (#propor to#1000 A) and away from x=0.50 it increases. A value of u=0.240 (5) has been established for fixing, the Se-atom positions in the CuGa_0_._5In_0_._5Se_2 solid solution. The JCPDS Diffraction File No. for CuInSe_2 is 40-1487 and for CuGa_0_._5In_0_._5Se_2 is 40-1488. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

British Library Electronic Table of Contents (United Kingdom)

The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...

Energy Technology Data Exchange (ETDEWEB)

GaN and Al{sub 1{minus}x}Ga{sub x}N films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10{sup 9} ohm-cm and 10{sup {minus}3}--10{sup {minus}8} cm{sup 2}/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

Energy Technology Data Exchange (ETDEWEB)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K{sub {alpha}} X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K{sub {alpha}} X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the ...

Energy Technology Data Exchange (ETDEWEB)

Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear ...

Energy Technology Data Exchange (ETDEWEB)

The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, ...

Energy Technology Data Exchange (ETDEWEB)

Room-temperature pulsed laser operation of (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P /(Al/sub 0.17/Ga/sub 0.83/)/sub 0.5/In/sub 0.5/P / (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved. The lasing wavelength is 626.2 nm, which is the shortest ever reported for an AlGaInP double heterostructure laser. Threshold current density is 50 kA/cm/sup 2/ for a diode with a 20-..mu..m-wide and 200-..mu..m-long stripe.

Energy Technology Data Exchange (ETDEWEB)

Information is provided about standardization and unification of rules for manufacturing normal electrical equipment designed for operating in underground shafts when there is no danger of explosion of gas, dust or steam. An analysis is made of the requirements included in the CEMA standard and in the state standard.

Science.gov (United States)

No abstract available.

International Nuclear Information System (INIS)

Mixed carbide fueled driver assembly experiments will be tested in FFTF fuel driver positions as part of the National Advanced Fuel Program. The design of the experiment flow ducts must assure conformance to FFTF functional requirements in addition to service as a test vehicle for the carbide fuel irradiations. Test goals of damage fluence burnup, and fluence to burnup ratio exceed those of the standard oxide fueled drivers. As a consequence, the 20% cold worked type 316 stainless steel material of construction will experience significant irradiation induced creep and swelling. Additionally, the flow duct design must withstand the enhanced thermal transients produced by the action of carbide fuel during reactor scrams. A major FFTF functional requirement is that adjacent flow ducts do not touch each other except at the load pads. This requires a realistic analysis of the creep and swelling deformation of the flow duct during an experiment ...

Energy Technology Data Exchange (ETDEWEB)

The objective of this research was to determine the extent of damage that occurs when two pipes experience an impact event due to one whipping against the other. The research was conducted through experimental and analytical approaches. The former required the development of a specialized impact machine that could accelerate a whipping pipe with sufficient energy to cause failure of a target pipe that was heated and pressurized to Pressurized Water Reactor (PWR) conditions. Damage was measured in terms of crushing, bending, and failure. The results of the tests permitted the correlation between pipes of a certain size and the damage they could cause when impacting with a certain amount of known energy. These results were used to evaluate the pipe whip criteria in the Standard Review Plan 3.6.2-4. It was established that the criteria conditions did not fully represent the results obtained experimentally. An analysis procedure to model the pipe ...

International Nuclear Information System (INIS)

In the frame of the European Technology R and D programme for International thermonuclear experimental reactor (ITER) and in the area of high heat flux plasma facing components (HHFC), representative small-scale mock-ups were manufactured and tested to compare different concepts and joining technologies (i.e. active brazing, hot isostatic pressing (HIPping), diffusion bonding, etc.). On the basis of the results obtained by thermal fatigue tests, the monoblock concept resulted to be the most robust one, particularly when the HIPping manufacturing technology is used. Within this programme, ENEA developed an alternative technique for manufacturing plasma-facing components with a monoblock geometry of the ITER machine. The basic idea of this technique, named hot radial pressing (HRP), is to perform a radial diffusion bonding between the cooling tube and the armour tile by pressurising the internal tube only and by keeping the process parameters within the range in ...

Energy Technology Data Exchange (ETDEWEB)

The fourth in a series of international Leak-Before-Break (LBB) Seminars supported in part by the US Nuclear Regulatory Commission was held at the National Central Library in Taipei, Taiwan on May 11 and 12, 1989. The seminar updated the international polices and supporting research on LBB. Attendees included representatives from regulatory agencies, electric utilities, nuclear power plant fabricators, research organizations, and academic institutions. Regulatory policy was the subject of presentations by Mr. G. Arlotto (US NRC, USA) Dr. B. Jarman (AECB, Canada), Dr.P. Milella (ENEA-DISP, Italy), Dr. C. Faidy (EDF/Septen, France ), and Dr. K. Takumi (NUPEC, Japan). A paper by Mr. K. Wichman and Mr. A. Lee of the US NRC Office of Nuclear Reactor Regulation is included as background material to these proceedings; it discusses the history and status of LBB applications in US nuclear power plants. In addition, several papers on the supporting research programs ...

Energy Technology Data Exchange (ETDEWEB)

Full text of publication follows: Hydrogen release and distribution in nuclear power plant containment is an important safety issue. Selection of a proper turbulence model is important for accurate estimation of the mixing process. The selection of turbulence model is dictated by the best compromise between accuracy and computational efforts. For this, three different turbulence models, viz. Standard k-{epsilon}, RNG k-{epsilon} and Reynolds Stress Model, based on Reynolds averaged Navier Stokes equations (RANS) approach, were used. The computations were done using the CFD code FLUENT, which is based on the control volume methodology. The computational results were compared with the experimental results of HYMIS test facility, where helium was used to simulate hydrogen. The processes of helium plume rise, multiple plume merging, distribution and mixing were studied. Based on these computations, a simple analytical/empirical zone based model was formulated for the ...

International Nuclear Information System (INIS)

KAERI (Korea Advanced Energy Research Institute) has performed research to develop the fabrication technology of CANDU nuclear fuel since 1981. Based on the satisfactory results of in-pile and out-of-pile tests of prototype nuclear fuel and the outstanding performance of 48 KAERI-made nuclear fuels in Wolsung(CANDU) power reactor, Korean government decided KAERI to supply all the nuclear fuels for Wolsung from 1988. In order to guarantee the safety and performance of nuclear fuel manufactured in mass production scale, well-organized quality assurance system and appropriate quality control techniques should be established. To establish the QA system, KAERI reviewed various QA standards and decided to establish QA system based on the 10 CFR 50 Appendix B. Quality control techniques was also revised to fit the mass production even though quality inspection techniques have already been developed during research period. By applying statistical ...

International Nuclear Information System (INIS)

CANDU reactors developed under Canadian licensing regulations that placed the primary responsibility for safety on the licensee. The Atomic Energy Control Board (AECB), Canada's nuclear regulatory agency, state in their regulations what is expected in terms of safety performance so that designers are free to propose the best means of meeting this performance. This goal-oriented approach, besides encouraging innovation, allowed CANDU to be licensed in other jurisdictions. The latest design - the large, single unit, CANDU 9 - explicitly incorporates licensability in Canada through a formal AECB review of the design; lessons learned from licensing CANDU 6 in Asian countries, particularly with Wolsong 2, 3 and 4 in Korea, and more recently with Qinshan in China; utility requirements for modem evolutionary plants; and emerging international standards for safety, sponsored or issued by the IAEA. By combining the assurance of acceptability in Canada ...

Science.gov (United States)

An overview is presented of the FFTF reactor and plant together with descriptions of core components, core internals, core system, primary and secondary control rod system, reactor instrumentation, reactor vessel and closure head, and supporting test programs. (DG)

International Nuclear Information System (INIS)

... 1343-3563 v. 57(1) SPECIFIC NUCLEAR REACTORS AND ASSOCIATED

International Nuclear Information System (INIS)

Progress on construction of the Cordoba reactor in Argentina and the Wolsung reactor in Korea is described. (E.C.B.).

International Nuclear Information System (INIS)

... Natural convection cooling of the channel type reactor performed with the fuel

International Nuclear Information System (INIS)

This handbook breaks down the complex field of nuclear reactor calculations into major steps. Each step presents a detailed analysis of the problems to be solved, the parameters involved, and the elaborate computer programs developed to perform the calculations. This book bridges the gap between nuclear reactor theory and the implementation of that theory, including the problems to be encountered and the level of confidence that should be given to the methods described. Volume II: Monte Carlo Calculations for Nuclear Reactors. In-Core Management of Four Reactor Types. In-Core Management in CANDU-PHW Reactors. Reactor Dynamics. The Theory of Neutron Leakage in Reactor Lattices. Index.

Science.gov (United States)

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser ...

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

Science.gov (United States)

High microwave power (1,000 W) electron cyclotron resonance CH{sub 4}/H{sub 2}/Ar discharges produce etch rates for In{sub 0.5}Ga{sub 0.5}P, Al{sub 0.5}In{sub 0.5}P{sub 0.5}, and Al{sub 0.5}Ga{sub 0.5}P of {approximately} 2,000 {angstrom}/min at moderate RF power levels (150 W) and low pressure (1.5 mTorr). This is approximately a factor of five faster than for conventional reactive ion etching conditions where much higher ion energies are necessary. The etched surfaces are smooth over a wide range of CH{sub 4}-to-H{sub 2} ratios and microwave powers. AlInP is more resistant to preferential loss of P from the near-surface during etching than is InGaP. While the etching is ion-driven, pure Ar discharges produce rough surfaces and the CH{sub 4}/H{sub 2} is necessary in the achievement of acceptable morphologies. The InGaAlP/GaAs heterostructure is being increasingly utilized in diode lasers, light ...

International Nuclear Information System (INIS)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that ...

International Nuclear Information System (INIS)

Experimental studies on the heat transfer and fluid dynamics of a high heat flux fuel rod for a very high temperature reactor (VHTR) were performed using a single channel test rig of a fuel stack test section (T_1_-_s) installed in a helium engineering demonstration loop (HENDEL). The fuel rod has been developed in order to enhance the turbulent heat transfer coefficient than that of the standard fuel rod obtained by the previous experiment. Two-dimensional square ribs were settled on the outer surface of the fuel rod axially to improve the heat transfer. The configuration of a square rib is 0.5 mm in width(w), 0.5 mm in height(h) and 5 mm in pitch(p): p/h=10. The experiment were carried out under the helium gas conditions of high temperature and pressure simulated the VHTR operation. For the turbulent region of Reynolds number 2,500#approx#8,000 of the VHTR core flow condition, it was found that the heat transfer coefficient of the fuel rod ...

International Nuclear Information System (INIS)

AECL is undertaking the validation of ADDAM, an atmospheric dispersion and dose code based on the Canadian Standards Association model CSA N288.2. The key component of the validation program involves the comparison of air concentrations predicted by the model with measured values. Measurements are available from field studies at two Canadian reactor sites and from a wind tunnel study of the CANDU site at Wol song, Korea. The measurements were obtained close enough to the release points to test the model for exclusion area boundaries as small as 500 m. Model predictions were higher than the observations almost 75 percent of the time and the magnitude of the over predictions was typically much larger than the magnitude of the under predictions. The effect of the topography at the Wol song site was limited to small changes in plume trajectory due to channeling in valleys and a small reduction in the lateral spread of the plume. The terrain did not ...

Science.gov (United States)

MnO2 in pyrolusite can react with SO2 in flue gas and obtain by-product MnSO4 x H2O. A pilot scale jet bubbling reactor was applied in this work. Different factors affecting both SO2 absorption efficiency and Mn2+ extraction rate have been investigated, these factors include temperature of inlet gas flue, ration of liquid/solid mass flow rate (L/S), pyrolusite grade, and SO2 concentration in the inlet flue gas. In the meantime, the procedure of purification of absorption liquid was also discussed. Experiment results indicated that the increase of temperature from 30 to 70 K caused the increase of SO2 absorption efficiency from 81.4% to 91.2%. And when SO2 concentration in the inlet flue gas increased from 500 to 3000 ppm, SO2 absorption efficiency and Mn2+ extraction rate decreased from 98.1% to 82.2% and from 82.8% to 61.7%, respectively. The content of MnO2 in pyrolusite had a neglectable effect on SO2 absorption efficiency. Low L/S was good for both removal of ...

International Nuclear Information System (INIS)

In previous work, on cooling from 300 K to 10 K the elastic moduli for both #alpha#- and #delta#-Pu dropped 30%. This large change may reflect effects of 5f-electron localization. In this work, the elastic moduli at ambient temperature of several Pu-Ga alloys were measured using resonant ultrasound spectroscopy (RUS). The strong temperature dependence of the bulk and shear modulus and the temperature independence of Poisson's ratio was confirmed and the upper temperature limit for #alpha#-Pu was extended to 360 K. Measurements of the time dependence of the shear moduli of Pu and Pu-2.36 at.% Ga were determined with high precision as a function of time and temperature. Using a model for time dependence of point defects, we determined the exponential time constant at ambient temperature for such variations. The low temperature results are consistent with Fluss .

International Nuclear Information System (INIS)

We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence '' hot '' implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900"oC up to 20-90 nm in those annealed at 1100"oC. For the samples annealed at 900"oC a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed. (author)

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Homogenous Al{sub x}Ga{sub 1{minus}x}P liquid phase epitaxial layers have been obtained with the temperature difference method under controlled vapor pressure (TDM-CVP). Very clear fine structures near band edge in photoluminescence spectra have been observed at 77 K for the first time. Photoluminescence measurement results confirmed that the free exciton recombination without phonon assistance plays an important role in the luminescence at 77 K and becomes dominant at room temperature. It is considered that Zero-phonon assisted free exciton recombination is intensified by some local perturbations to electrical potentials against carriers or excitons introduced by Al atoms in Al{sub x}Ga{sub 1{minus}x}P layers, which can give momentum change necessary for recombination.

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

International Nuclear Information System (INIS)

In this paper, a Kramers-Kronig (KK) analysis of infrared (IR) reflectance spectrum of quaternary In_0_._0_1Al_0_._0_6Ga_0_._9_3N film grown by molecular beam epitaxy (MBE) is reported. The infrared measurement is performed in the reflection mode at an incident angle of 15 degree sign by Fourier transform infrared (FTIR) spectroscopy at T = 300 K. The Kramers-Kronig analysis of the reflectivity data has been used to obtain the real and imaginary parts of the index of refraction (n and k), and the real and imaginary parts of the dielectric response function (#epsilon#' and #epsilon#') of the materials. Finally, the transverse optical and longitudinal optical phonons for quaternary In_xAl_yGa_1_-_x_-_yN were obtained.

Energy Technology Data Exchange (ETDEWEB)

Computer simulations of two-junction, concentrator tandem solar cell performance show that IR-sensitive bottom cells are required to achieve high efficiencies. Based on this conclusion, two novel concentrator tandem designs are under investigations: (1) a mechanically stacked, four-terminal GaAs/GaInAsP (0.95 eV) tandem, and (2) a monolithic, lattice-matched, three-terminal InP/GaInAs tandem. In preliminary experiments, terrestrial concentrator efficiencies exceeding 30% have been achieved with each of the above tandem designs. Methods for improving the efficiency of each tandem type are discussed. (orig.).

International Nuclear Information System (INIS)

Nanocrystalline powders of GaN with grain sizes ranging from 2 to 30 nm were examined under high external pressures by in situ diffraction techniques in a diamond anvil cell at DESY (HASYLAB, Station F3). The experiments on densification of pure powders under high pressure were performed without a pressure medium. The mechanism of generation and relaxation of internal strains and their distribution in nanoparticles was deduced from Bragg reflections recorded in situ under high pressures at room temperature. The microstrain was calculated from the full-width at half-maximum (FWHM) values of the Bragg lines. It was found that microstrains in GaN crystallites are generated and subsequently relaxed by two mechanisms: generation of stacking faults and change of the size and shape of the grains occurring under external stress. (author)

International Nuclear Information System (INIS)

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

Science.gov (United States)

A 5 GHz GaAs monolithic astable multivibrator-type voltage-controlled oscillator has been developed. The monolithic oscillator uses 2 micron long self-aligned TiW-silicide gate MESFETs as well as GaAs Schottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X-band oscillation frequency can be obtained with 1 micron long gate FET and low loss resonance inductors.

International Nuclear Information System (INIS)

The TVR heavy water research reactor was deployed at Moscow Institute of Theoretical and Experimental Physics. In 1990, the final batch of the spent nuclear fuel from this reactor was shipped to Production Association (PA) 'Mayak' for reprocessing. The SNF removal was a stage of the reactor decommissioning activities. The designs of the TVR reactor and its fuel elements are similar to the RA reactor designs. Two ways of the RA reactor SNF transportation to PA 'Mayak' have been considered: in aluminum barrels and in additional canisters using respectively TUK-32 and TUK-19 shipping casks. The practical experience and the equipment used to prepare for the TVR reactor SNF removal can be helpful to the RA reactor personnel in finding the best way to perform these engineering operations. (author)

Energy Technology Data Exchange (ETDEWEB)

JRR-3 is a research reactor of 10 MWt output, which attained the criticality in 1962. All the design, manufacture, installation and others of this reactor were carried out by Japanese technologies, except the fuel and heavy water as the moderator and coolant, therefore it is nicknamed Home-made No.1 Reactor. Recently, due to the change in the state of utilizing research reactors and the rise of quality in the utilization, JRR-3 has become to be unable to meet sufficiently the needs of users. The plan of reconstructing the JRR-3 was considered under such situation, and in order to reuse the reactor building, the reactor proper is removed, and an entirely new, high performance, versatile reactor is to be constructed. In this paper, as to the removal works of the JRR-3 reactor proper, the method of execution, design, the ...

Energy Technology Data Exchange (ETDEWEB)

Yellow-emitting pulsed laser operation of an Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P/Al/sub 0.16/Ga/sub 0.36/In/sub 0.48/P/ Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm/sup 2/ for a diode with a Si/sub 3/N/sub 4/ insulated 8-..mu..m-wide and 250-..mu..m-long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.

International Nuclear Information System (INIS)

AlGaInP epitaxial layers grown at 690 degree C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the #left brace#111#right brace# directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, ...

International Nuclear Information System (INIS)

The electronic band structure, transport properties, and lattice dynamics in AuX_2 (X = Al, Ga and In) under high pressure have been extensively studied with full potential linearized augmented plane wave and pseudopotential plane wave methods. The theoretical results for the electronic band structure and Fermi surface reveal pressure-induced electronic topological transitions (ETTs) in AuGa_2 and AuIn_2, while they are absent in AuAl_2, in excellent agreement with the experimental observations. Moreover, calculations of the transport properties at different pressures reveal subtle changes in the band structure close to the Fermi surface of the three intermetallic compounds. It is clear that the anomalies in transport properties are due to ETTs. Interestingly, a pressure-induced soft transverse acoustic (TA) phonon mode is identified only in AuGa_2. The TA phonon instability at the Brillouin zone boundary L point might be ...

Energy Technology Data Exchange (ETDEWEB)

The temperature dependence of T/sub 1/ spin-lattice relaxation time on /sup 51/V, /sup 69/Ga, /sup 71/Ga and Knight shift on /sup 51/V and /sup 29/Si nuclei in polycrystalline V/sub 3/Si, V/sub 3/Ga, V/sub 3/Ge and in the monocrystal V/sub 3/Si in normal state is investigated. For V/sub 3/Si and V/sub 3/Ga a rapid growth (T/sub 1/T)/sup -1/ is observed with temperature decrease while for V/sub 3/Ge the maximum (T/sub 1/T)/sup -1/ at T approximately equal to 60 K has been found. The temperature dependence peculiarities have been discussed on the basis of theoretical models available and zone structure calculations for A-15 compounds. The T/sub 1/ anisotropy and possibility of its experimental discovery are considered. Anisotropic contribution in (T/sub 1/T)/sup -1/ and contributions of d states of different symmetries into the electron state density at the Fermi level are estimated for V/sub 3/Si from ...

Energy Technology Data Exchange (ETDEWEB)

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the extended defects and on ...

UK PubMed Central (United Kingdom)

Genetic algorithms (GA) were used to develop specific copper metal-ligand force field parameters for the MM3 force field, from a combination of crystallographic structures and ab initio...Full Text Available