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Baobab fruit are harvested and used throughout Africa as an important source of food and are sold to generate income. Commercial use is increasing rapidly as derivatives of the fruit such as baobab seed oil and fruit pulp are being exported to Europe and North America. The cash derived from the sale of fruit support thousands of rural people. This study examines baobab fruit yields in an area being harvested for commercial use. It represents baobab populations and harvesting scenarios typically found in Southern Africa and is the first study in Africa to combine demographic and production data in determining baobab fruit yields. Fruit production was examined across five land-use types (nature reserves, rocky outcrops, plains, fields and villages) and over three consecutive years. Factors a...

British Library Electronic Table of Contents (United Kingdom)

Local communities in southern Africa derive many benefits from marula [Sclerocarya birrea (A. Rich.) Hochst. subsp. caffra (Sond.) Kokwaro]. These include the contribution of this species towards health, nutrition, food security and conservation by sharing local skills and knowledge related to it. Marula fruits can be eaten fresh, squeezed to make juice, brewed in traditional beer or used to make jam and jelly. The kernels are also edible and can be pressed to extract oil for cooking and cosmetics, i.e., for skin and hair application. The bark, roots, seeds and leaves are exploited for traditional medicinal purposes. Marula has acquired significant commercial value since its fruits and other products have entered local, regional and international trade in southern Africa. To diversify frui...

British Library Electronic Table of Contents (United Kingdom)

Summary We describe the initiation and establishment of The University of Zambia - University College London Medical School (UNZA-UCLMS) Research and Training Project, an entirely African scientist-led, south-north partnership. In its 16 year existence, the project, by successfully obtaining competitive grant funding, has transformed itself into one of Africa's most productive African-led R&D programmes with training and visible research outputs. The project serves as a role model and now networks R&D and training activities with six southern African (10 institutions) and six European countries. This project case study illustrates that deep commitment is essential for success and that the factors which facilitate success in R&D in Africa need to be evaluated. The long-term prospects for su...

Wastenet

... (restricted)] 251-260 Revisiting new variant famine: the case of Swaziland by Scott Naysmith & Alex Waal & Alan Whiteside [Downloadable! (restricted)] 261-269 Food prices and the HIV response: findings from rapid regional assessments in eastern and southern Africa in 2008[InlineMediaObject not available: see fulltext.][InlineMediaObject not available: see fulltext.] by Stuart Gillespie & Paul Jere & John Msuya & Scott Drimie [Downloadable! (restricted)] 271-289 Declining global per capita agricultural production and warming oceans ...

British Library Electronic Table of Contents (United Kingdom)

Taking the port city of Alicante the author outlines how numerous crossroads connect the northern and southern shores of the Mediterranean. Along the arc of Euro-Mediterranean trading centres lies the European continent as a whole, extending eastwards to the republics emerging from the disintegration of the Soviet Empire, and in the south to Francophone and Muslim Africa. This arc of trading towns includes Istanbul, Dubai, Naples, Antwerp, Hamburg, Marseilles and Alicante. The author traces the movements of individuals pursuing "suitcase trade" performed by means of face-to-face links, word of mouth, and verbal agreements. The author then traces this vast "choreographed movement" that originates from Europe's borders, and suggests that although reasons other than trade influence mobility a...

British Library Electronic Table of Contents (United Kingdom)

Summary Objective- To evaluate the role of prophylactic trimethoprim-sulfamethoxazole (co-trimoxazole) antibacterial prophylaxis in reducing morbidity and mortality in HIV-infected post-natal women in southern Africa. Methods- Double-blind placebo-controlled trial. HIV-infected women with WHO stage 2 or 3 HIV disease who had recently delivered in the Department of Obstetrics and Gynaecology at the University Teaching Hospital, Lusaka, Zambia were randomised to receive daily co-trimoxazole (cotox) or matched placebo daily for the duration of the trial. Participants were followed up for a minimum of 1-year. Primary outcome measures were mortality from any cause or hospital admission and serious adverse events. Results- Of 600 women randomised, follow-up information was available from 355 (18...

International Nuclear Information System (INIS)

Present and potential future changes to the global environment have important implications for marine pollution and for the air-sea exchange of both anthropogenic and natural substances. This report addresses three issues related to the potential impact of global change on the air-sea exchange of chemicals: Global change and the air-sea transfer of the nutrients nitrogen and iron. Global change and the air-sea exchange of gases. Oceanic responses to radiative and oxidative changes in the atmosphere. The deposition of atmospheric anthropogenic nitrogen has probably increased biological productivity in coastal regions along many continental margins. Atmospheric deposition of new nitrogen may also have increased productivity somewhat in mid-ocean regions. The projected future increases of nitrogen oxide emissions from Asia, Africa and South America will provide significant increases in the rate of deposition of oxidized nitrogen to the central North Pacific, the ...

Science.gov (United States)

Countries and Regions A-Z List of Countries and Other Areas Africa (Sub-Sahara) East Asia and the Pacific Europe and Eurasia Near East (northern Africa, Middle East) South and...

CSIR Research Space (South Africa)

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... Central Africa: Bostrychus africanus is known from Banana, Matadi and Malela, Lower Congo River. Elsewhere, the species ... ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga"+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).

UK PubMed Central (United Kingdom)

BackgroundChildhood is a high risk time for ultraviolet induced skin damage as this age group has more time and opportunity to be outdoors in the sun. Children in Africa with the...Full Text Available

CSIR Research Space (South Africa)

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British Library Electronic Table of Contents (United Kingdom)

This study examines the degree of price-integration of equity indices between the major markets of Africa, namely Morocco, Tunisia, Egypt, Kenya, Nigeria, Namibia and South Africa with the European markets of London and Paris. Vector Autoregressive and Autoregressive Distributed Lag methods reveal that African markets are largely price-segmented. The only markets that are price-integrated have shared economic and financial institutions, such as Namibia and South Africa, and Egypt, Tunisia and France. The evidence suggests that development policy should be focussed on enhancing existing institutions rather than embarking prematurely on regional integration.

KoreaScience (Korea)

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Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

GaP and AlGaP were grown by atmospheric pressure OMVPE on GaP substrates using tertiarybutylphosphine as the phosphorus source. A specular surface of GaP was obtained on a (100) just-oriented surface at 700deg C. Hazy but uniform thickness AlGaP was obtained. The growth efficiency for GaP was 1.2x10{sup 3}{mu}m/mol and that for AlGaP was 2.1x10{sup 3}{mu}m/mol.4.2 K photoluminescence showed near-edge emission from both GaP and AlGaP. (orig.).

Science.gov (United States)

This collection contains 20 papers written by educators, administrators and information scientists who had conducted manpower surveys in the library and information fields: (1) "Background and Evolution of Educational Planning and Forecasting for Information Manpower" (Yves Courrier); (2) "Indicators for the Emerging Information Market" (Nick Moore); (3) "Information Scientists in the English-Speaking Caribbean: Challenges and Responses in the Development Process" (Gloria Greene, Reive Robb); (4) "National Survey on Manpower in Libraries, Information Centres and Archives in Thailand" (Suwakhon Phadungath); (5) "Predicting the Future: Manpower Forecasting for the Library and Information Professions in Southern Africa" (J. R. Neill, D. M. Mbaakanyi); (6) "Problems in Forecasting Manpower Needs" (Monique Jucquois-Delpierre); (7) "Electronic Measures for Human Resource Research" (Anthony Debons, Mariano Maura-Sardo, Anne Thompson); (8) "The ...

Energy Technology Data Exchange (ETDEWEB)

The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native ...

Science.gov (United States)

Precambrian gneisses in the San Bernardino Mountains were first identified and described in the vicinity of Baldwin Lake by Guillou (1953). Five lithologic units mappable at 1:24,000 scale are recognized: biotite [+-] muscovite quartzofeldspathic gneiss, amphibolite, pyroxene metagabbro, augen gneiss, and biotite [+-] muscovite granitic gneiss. Baldwin gneiss with this L Baldwin Lake, the gneissic fabric is rotated toward the northwest, subparallel to the Doble fault. Along this fault, Baldwin gneiss is structurally underlain by overturned Paleozoic quartzite and marble (Zabriskie Quartzite and Carrara Formation). Regional relations suggest that the Doble fault is a northeast-directed basement thrust fault of pre-Late Cretaceous age, and may be contemporaneous with late Paleozoic deformation and metamorphism of Paleozoic rocks further west in the range. Field relations suggest that Baldwin gneiss in its type area largely retains Proterozoic fabrics and mineral assemblages, despite ...

UK PubMed Central (United Kingdom)

BackgroundLow back pain (LBP) is the most prevalent musculoskeletal condition and one the most common causes of disability in the developed nations. Anecdotally, there is a general...Full Text Available

Science.gov (United States)

It has been widely assumed that South Africa has achieved universal basic education. Through an analysis of the 2001 census and two national enrolment datasets rather than statistical projections, this study re-examines this assumption and provides new estimates of enrolment levels in primary, basic and secondary education. Using GER, NER, and ASER indicators, disaggregated by gender and province, the study shows that access to education in South Africa is not as widespread as published sources note. While statistics show that national access levels are lower than prevailing estimates, the relatively high levels of access in some of the most disadvantaged provinces suggest the need to re-evaluate assumptions about targets for universal access for developing regions. In addition, the analysis reveals South Africa's unexpected and provocative gendered patterns of access and participation.

Science.gov (United States)

... National Atlas of South West Africa. National Bookprinters, Goodwood, ZA. Walter, H. 1986. The Namib Desert. In: ... ...

Science.gov (United States)

... times, in Iran (Persia), the Arabian Gulf region, East Africa, territories of the former Ottoman Empire, parts of Eastern Europe ...

UK PubMed Central (United Kingdom)

BackgroundHarbour porpoises Phocoena phocoena from the southern North Sea are known to display high levels of Zn and Hg in their tissues linked to their nutritional...Full Text Available

UK PubMed Central (United Kingdom)

Patent medicine vendors (PMVs) are a ubiquitous feature of the informal health sector in Nigeria. A previous study on healthcare-seeking behaviour of persons with chronic cough in southern Nigeria found...Full Text Available

UK PubMed Central (United Kingdom)

Southern tick-associated rash illness (STARI) is a Lyme disease-like infection described in patients in the southeastern and south-central United States, where classic Lyme disease is relatively rare....Full Text Available

UK PubMed Central (United Kingdom)

The roles played by environmental factors in seasonal changes in microbial populations were investigated in the Tvärminne area, off the southern coast of Finland. Surface-layer samples were...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. ...

Energy Technology Data Exchange (ETDEWEB)

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

Science.gov (United States)

Excitonic transitions in metalorganic vapor phase epitaxially grown In[sub [ital x

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations that incorporate free energy of the vapor phase in order to determine the initial growth process of cubic GaN on GaN (001)-(4x1). The results suggest that a N-adsorbed structure appears at the initial growth stage and then Ga adsorbs on the N-adsorbed GaN (001)-(4x1) surface. Considering this process, we performed Monte Carlo simulations. The results suggest that the maximum point of Ga coverage after supplying a Formula Not Shown monolayer of atoms shifted toward a Ga-rich condition from V/III=1.0.

UK PubMed Central (United Kingdom)

BackgroundSeventy percent of urban populations in sub-Saharan Africa live in slums. Sustaining HIV patients in these high-risk and highly mobile settings is a major future challenge....Full Text Available

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)b2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed ...

Energy Technology Data Exchange (ETDEWEB)

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs ...

Energy Technology Data Exchange (ETDEWEB)

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

Energy Technology Data Exchange (ETDEWEB)

We discuss the initial development of a concentrator device based on the GaInP/GaAs monolithic tandem cell structure. The very high one-sun efficiency of this device, coupled with its characteristic low operating current, make this a promising candidate for use under high concentration. Test results for a prototype device are presented. This device achieves an efficiency of 29.5% at a concentration of 102 suns.

Energy Technology Data Exchange (ETDEWEB)

Short communication.

CERN Document Server

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2p sub 3 sub / sub 2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga sub 2 O sub 3 powder were used. A separate study aiming the identification of the GaAs ...

British Library Electronic Table of Contents (United Kingdom)

High levels of unemployment are a permanent feature in the urban areas of many developing countries. South Africa is no exception in this regard. Poverty and hardship caused by unemployment force many participants in the labour market to venture into the urban informal economy in order to survive. The activities of the waste pickers fall within the urban informal economy. In spite of the fact that waste pickers are a common sight in the urban areas of Pretoria and other South African cities, remarkably little is known about them and scant attention is paid to them. The aim of the study was to establish a socio-economic profile of the street waste pickers in Pretoria and to describe the social interaction and relationship dynamics between the waste pickers and their families, each other, th...

Energy Technology Data Exchange (ETDEWEB)

A statistical method is developed to determine the locations of major pollutant sources affecting a distant downwind receptor, provided that air trajectories can be estimated. Probability density functions are estimated which indicate the overall residence time of air parcels over a given geographic region as they travel toward a receptor and residence time for the case of high pollutant concentrations at the receptor. These functions are used to estimate a conditional probability function which indicates the potential for a source region to contribute to high air pollution concentrations. Finally, a source contribution function is formulated to indicate the relative contribution of different source regions to high concentrations at the receptor. The method is tested using data collected at Grand Canyon National Park in 1980. The dominant pathway for air masses arriving at Grand Canyon during this period was southern California. A lesser pathway was from the border ...

Energy Technology Data Exchange (ETDEWEB)

The Conawapa-Winnipeg Power Transmission Complex includes five interrelated transmission and conversion facilities. This booklet describes work done on the upgrade of the southern receiver system, one component of the complex. The southern receiver system is composed of a network of high voltage transmission lines and station facilities. The booklet includes a description of the upgrade, the project setting, short and long-term effects and impact management, and the next steps to be taken in the process, including the regulatory process and public consultation.

International Nuclear Information System (INIS)

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

Science.gov (United States)

the southern Arabian Gulf region left its signature on the heterogeneous aerosol .... Arabian Gulf region, since large differences in ? may be caused by ...

Science.gov (United States)

Jan 26, 2005 ... Heavy snow settled over Iran on January 23, 2005, closing roads and ... Located along the southern front of the Alborz mountains, Iran's ...

Science.gov (United States)

dust measured in the Arabian Gulf region during UAE2 and examine the hypothesis that ... [8] UAE2 took place in the southern Arabian Gulf region in August and ...

International Nuclear Information System (INIS)

Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI_3 or BBr_3 discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates (>6000 Angstrom min"-"1) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI_3 or BBr_3 content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO_2 and SiN_x of #>=#8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and AlInP. copyright 1998 American Vacuum Society.

Energy Technology Data Exchange (ETDEWEB)

Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a ...

UK PubMed Central (United Kingdom)

BackgroundIn Africa low birth weight (LBW) (<2500 g), is the strongest determinant of infant morbidity and mortality. The aim of this study was to quantify the effect of...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundCharacterizing infectious disease burden in Africa is important for prioritizing and targeting limited resources for curative and preventive services and monitoring the...Full Text Available

UK PubMed Central (United Kingdom)

The pyrethroid knockdown resistance gene (kdr) has become widespread in Anopheles gambiae in West Africa. A trial to test the continuing efficacy of insecticide-treated...Full Text Available

UK PubMed Central (United Kingdom)

This paper summarizes the findings for the African Region of the WPA Task Force on Steps, Obstacles and Mistakes to Avoid in the Implementation of Community Mental Health Care. We present an overview...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundThe burden of non-communicable diseases, including type 2 diabetes, is growing in South Africa. This country has a complex mix of over- and under-nutrition, especially...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

This document is a discussion of a static electrification event in each of the 1050 MVA units installed at the Koeburg Nuclear Power Plant in South Africa. Results of a tear-down inspection performed after the event are given, as is an analysis of the event. A number of photographs are included.

UK PubMed Central (United Kingdom)

BackgroundIn sub-Saharan Africa, Plasmodium falciparum malaria in pregnancy presents an enormous diagnostic challenge. The epidemiological and clinical relevance...Full Text Available

Science.gov (United States)

AT AFRICA (O.F.) AIDO1 SYMMES CREEK AT AID ALLO1 MAHONING RIVER AT ALLIANCE ALZO1 ALEXANDRIA AMDO1 AMSTERDAM ARMO1 CAPTINA CREEK AT SR 148 AT ARMSTRONG MILLS ASVO1 WALNUT CREEK...

UK PubMed Central (United Kingdom)

The occurrence of outbreaks of cholera in Africa in 1970 and in Latin America in 1991, mainly in coastal communities, and the appearance of the new serotype Vibrio cholerae O139 in...Full Text Available

UK PubMed Central (United Kingdom)

Coercive experiences at sexual debut have been shown to be associated with other sexual risks throughout the life course. Using nationally representative surveys from 12–19 year old...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundTuberculosis (TB) is the most common opportunistic infection in HIV-infected adults in developing countries. Isoniazid (INH) is recommended for treatment of latent TB infection,...Full Text Available

UK PubMed Central (United Kingdom)

ObjectiveThere has been much debate about the value of condoms in HIV/STI programming. This should be informed by evidence about intervention impact on condom use, but there is limited...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

Energy Technology Data Exchange (ETDEWEB)

This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

International Nuclear Information System (INIS)

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

International Nuclear Information System (INIS)

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

Environmental Research Database

DescriptionRoot-knot nematodes (Meloidogyne spp.) are major nematode pests of most tropical crops, making roots less efficient at withdrawing nutrients and water from soil, sometimes causing the total failure of crops grown by resource-poor farmers in Africa. Nematicides are some of the most toxic products used in crop protection, and are inappropriate or too expensive for use on most crops in Africa and there is an urgent need for new methods of nematode management. The fungus Pochonia chlamydosporia is [continued...

Energy Technology Data Exchange (ETDEWEB)

Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.

Science.gov (United States)

The purpose of the study was to investigate the adequacy of educational services available for the implementation of the ideals of the Universal Basic Education (UBE) in Southern Nigeria. Using the multistage sampling technique, 800 primary school teachers were selected from the three geo political zones in Southern Nigeria as participants in the study. However, 1457 usable copies of the questionnaire administered to participants were used for the final study. The researchers collected and analyzed data to (1) Ascertain how free the UBE was in Southern Nigeria and (2) to determine if educational services were adequately provided for the implementation of the programme. Results of data analysis suggest that the UBE was not entirely free as parents still buy books and report cards for their children in primary schools. Also, educational services were not adequately provided in the schools. Recommendations were made to ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

... dpg-tagungen.de Dresden (Germany) 27-31 Mar 2006 0420-0195 VDPEAZ

Energy Technology Data Exchange (ETDEWEB)

This paper discusses design considerations for the recently introduced GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140--180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. The authors focus on the issues of grid design, top-cell thickness, and antireflectance coat. They also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.

International Nuclear Information System (INIS)

Russian 1997 p. 266-267 Russian Federation Ushakova, GA

International Nuclear Information System (INIS)

... angiotensin gallium 67 lungs lysozyme patients sarcomas beta decay

International Nuclear Information System (INIS)

The fluorescence, absorption, infrared and Raman spectra of Sm_3Ga_5O_1_2 have been investigated. The energy-level schemes in the energy range 3000-16000 cm"-"1 have been determined. The number and symmetries of the Sm_3Ga_5O_1_2 crystal normal mode have been obtained by the molecular site group analysis and their comparison with the experiment has been made.

International Nuclear Information System (INIS)

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In_xAl_yGa_1_-_x_-_yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 #mu#m In_xAl_yGa_1_-_x_-_yN alloy grown on 0.5-1.0 #mu#m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In_xAl_yGa_1_-_x_-_yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In_xAl_yGa_1_-_x_-_yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have ...

International Nuclear Information System (INIS)

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

International Nuclear Information System (INIS)

The information of phase transformation is attained by in situ XRD experiments leading to the knowledge of topological threshold in GeS2-Ga2S3 glasses. The turning point of phase transformation behavior is demonstrated to be glasses containing 14-15 mol% Ga2S3. To interpret it a network demixing model is further improved and proposed for the structure of these ternary or quasi-binary chalcogenide glasses. For the nearest-neighbor coordination environment of glass with a transitional composition of 85.7 mol% (6/7) GeS2.14.3 mol% (1/7) Ga2S3, six-coordinated [S3Ga-X-GaS3] units (X=S or None) are well isolated by the [GeS4] structures, which contributes to the decreasing of precipitation of Ga2S3 crystals in (100-x)GeS2-xGa2S3 (x?14.3) glasses corresponding to the experimental evidence of the phase transformation behavior. This scenario of intermediate-range ...

Science.gov (United States)

The strategy for building SASOL plants reflects a commitment to long-range planning. The first plant, which represented a large investment for a moderate production capacity, was built to establish a technology for reducing South Africa's dependence on imported motor fuels. After the success of the plant, SASOL made plans for a larger plant, which had to be justified solely on economic grounds. At that time, petroleum crude was cheap and plentiful, and the second plant was cancelled. But when OPEC formed and the price of petroleum crude was increased, the South African government reconsidered the plans for another SASOL plant. Furthermore, because the cost of fuels produced at Sasol I proved to be significantly insensitive to inflation and future OPEC price increases were expected, SASOL projected that a new, larger plant should make a profit within a few years after its initial operation. But OPEC prices and inflation have risen even faster than ...

Energy Technology Data Exchange (ETDEWEB)

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

Energy Technology Data Exchange (ETDEWEB)

A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

Environmental Research Database

ObjectivesIn the long term, we aim to improve understanding of the relationships between ecosystem services, water resources, food production and poverty in Sub-Saharan Africa. Specifically, we seek to understand how local communities deal with climate-related risk and uncertainty and the opportunities they have - or could have - in shaping adaptation planning around pro-poor, small-scale irrigation and to identify priorities for ecosystem management, particularly in terms of pro-poor water allocation. In [continued...]DescriptionIncreased food production is widely considered to be a fundamental step toward the reduction of poverty in Sub-Saharan Africa (SSA). Although the agricultural sector account for two-thirds of the labour force, SSA is the only region in the world where per capita food production declined over the latter half of the 20th century. It also remains highly vulnerable to extreme climate variability and future climate change ...

Science.gov (United States)

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a ...

International Nuclear Information System (INIS)

This study revisits the environmental Kuznets curve (EKC) hypothesis for water pollution by using a recent dynamic technique, which is the generalized method of moments (GMM) approach, for a board sample of 97 countries during the period 1980-2001. On a global scale, as we cannot obtain the EKC relationship between real income and biological oxygen demand (BOD) emissions, this paper further classifies these countries into four regional groups - Africa, Asia and Oceania, America, and Europe - to explore whether the different regions have different ECK relationships. The empirical results show evidence of the inverted U-shaped EKC relationships' existence in America and Europe, but not in Africa and Asia and Oceania. Thus, the regional difference of EKC for water pollution is supported. Furthermore, the estimated turning points are, approximately, US$13,956 and US$38,221 for America and Europe, respectively.

British Library Electronic Table of Contents (United Kingdom)

Abstract Aim- To explore whether the subspecific genetic entities of Acacia saligna occupy different bioclimatic niches in their native and introduced ranges and whether these niches are predictable using species distribution models (SDMs). Location- Australia, South Africa and the Mediterranean Basin. Methods- Species distribution models were developed in MAXENT using six climatic variables to calculate the climatic suitability of the ranges of A.saligna. We assessed (1) the subspecific niche differences identified by SDMs using measures of niche overlap and model performance; (2) the ability of SDMs to predict the most likely subspecific genetic entities present in South Africa based on comparisons to genetic data; and (3) the ability of SDMs to predict the most likely subspecific geneti...

British Library Electronic Table of Contents (United Kingdom)

Poaching of wildlife animals for subsistence and commercial purposes has lead to population declines in Africa. In forensic cases, a need exists to identify the species of origin of carcasses, meat or blood. In the study presented here, the mitochondrial COI gene was sequenced to determine the species of unknown samples in three suspect South African forensic wildlife cases. In two cases the unknown samples were identified as originating from domestic cattle (Bos taurus) and in the third case the sample was identified as common reedbuck (Redunca arundinum). This is the first report of the COI sequence of common reedbuck. The study highlights the need for accurate wildlife reference material from each country in order to convict wildlife cases.

UK PubMed Central (United Kingdom)

BackgroundStreptococcus suis is an emerging zoonotic pathogen and is the leading cause of bacterial meningitis in adults in Vietnam. Systematic data on the antimicrobial...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundIt has been reported that the El Niño–Southern Oscillation (ENSO) influences the interannual variation of endemic cholera in Bangladesh. There is increased...Full Text Available

Science.gov (United States)

... its infancy. However, the geological record of many fossil fungi is well established (Elsik, 1996; Kalgutkar and Jansonius, ... 1988). A comprehensive account of the history of fossil fungi, and the impor...

UK PubMed Central (United Kingdom)

Eight recreational parks located in a Lyme disease endemic area of southern New York State were surveyed for the presence of ticks during the summer of 1985 by drag sampling. Ixodes dammini, the primary...Full Text Available

UK PubMed Central (United Kingdom)

Rapid changes in China over the past two decades have led to significant problems associated with population migration and changing social attitudes, including a growing sex industry and concurrent...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundThe aim of this study was to investigate the mental health status, and the risk factors associated with mild psychiatric disorders, of female foreign spouses (from Vietnam,...Full Text Available

Science.gov (United States)

... on a transgressive surface; examples from the Silurian Whirlpool Sandstone of southern Ontario, Canada. Journal of Sedimentary ... and C. J. Salas. 1991. The Lower Silurian Whirlpool Sandstone. in Cheel, ...

UK PubMed Central (United Kingdom)

BackgroundAn artemisinin-based combination therapy, artesunate (AS) plus sulphadoxine-pyrimethamine (SP), was compared to SP monotherapy to provide evidence of further treatment...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Potential uses of foliage and bark wastes of E. ('Mysore') hybrid in southern India for the production of cineole and oxalic acid respectively are discussed. Only certain strains are cineole-rich and these are being successfully propagated vegetatively at the authors' laboratory.

UK PubMed Central (United Kingdom)

BackgroundThe southern African tick shell, Nassarius kraussianus (Dunker, 1846), has been identified as being the earliest known ornamental object used by human...Full Text Available

Science.gov (United States)

The results of experimental studies on the contribution of zoogenic debris to transformation of soil properties in the southern taiga subzone of Central Siberia are analyzed. They show that water-soluble carbon outflow from the forest litter increases by 21-26% upon a Siberian moth invasion, with this value decreasing to 14% one year later. The burning of forest in an area completely defoliated by the pest leads to changes in the stock, fractional composition, actual acidity, and ash element contents of the litter. The litter-dwelling invertebrate assemblage is almost completely destroyed by fire and begins to recover only after two years. PMID:18491565

Energy Technology Data Exchange (ETDEWEB)

Intensive measurements of organic acids, inorganic acids, aldehydes and peroxyacetyl nitrate (PAN) in urban air were carried out at a Southern California smog receptor site, Glendora, CA, August 12-22, 1986. The objective of this project was to augment the data base regarding organic acids in urban air and to assess their role with emphasis on ambient levels, diurnal variations, phase distribution, emissions, in-situ formation and removal. The relative abundance of organic acids and inorganic acids was determined for the first time from simultaneous measurements carried out during this study.

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...

Energy Technology Data Exchange (ETDEWEB)

Ga{sub 0.6}In{sub 0.4}P/(Al{sub 0.8}Ga{sub 0.2}){sub 0.4}In{sub 0.6}P strain-compensated multiple quantum wells (SCMQW) and Ga{sub 0.5}In{sub 0.5}P/(Al{sub 0.4}Ga{sub 0.6}){sub 0.5}In{sub 0.5}P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

Energy Technology Data Exchange (ETDEWEB)

Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

International Nuclear Information System (INIS)

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical ...

Energy Technology Data Exchange (ETDEWEB)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

International Nuclear Information System (INIS)

Two plasma chemistries, i.e., CH_4/H_2/Ar and Cl_2/Ar, were compared for the etching of InGaP, AlInP, and AlGaP under inductively coupled plasma (ICP) conditions. While the etching with CH_4/H_2/Ar discharges appears to be ion driven, Cl_2/Ar discharges showed an additional strong chemical enhancement. The highest etch rate (#approx#1 #mu#m/min) for InGaP was achieved at high ICP source power (#>=#750 W) with the Cl_2/Ar chemistry. Cl_2/Ar discharges provided very smooth surfaces in all three materials with root-mean-square roughness measured by atomic force microscopy around 2 nm. This result may be due to the efficient ion-assisted product desorption in this chemistry. The etched near-surface region of InGaP (#approx#100 Angstrom) with Cl_2/Ar maintained almost the same stoichiometry as that of the unetched control. By contrast, the CH_4/H_2/Ar plasma chemistry produced somewhat rougher surfaces ...

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

Energy Technology Data Exchange (ETDEWEB)

The fluorescence, absorption, infrared and Raman spectra of Sm/sub 3/Ga/sub 5/O/sub 12/ have been investigated. The energy-level schemes in the energy range 3000-16000 cm/sup -1/ have been determined. The number and symmetries of the Sm/sub 3/Ga/sub 5/O/sub 12/ crystal normal mode have been obtained by the molecular site group analysis and their comparison with the experiment has been made.

Energy Technology Data Exchange (ETDEWEB)

X-ray photoemission spectroscopy has been used to measure the valence band offset {Delta}E{sub v} for the AlP/GaP (001) heterojunction interface. The heterojunction samples were prepared by molecular-beam epitaxy. A value of {triangle}E{sub v}=0.43 eV is obtained (staggered band alignment, with AlP valence band below that of GaP). 24 refs., 8 figs., 1 tab.

International Nuclear Information System (INIS)

Kinetics of decomposition of gallium and alkali metal intermetallic compounds in the systems LiGa-LiOH, LiGa-NaOH and LiGa-KON was studied in the temperature range of 40-80 deg C. It was ascertained that increase in temperature gives rise to increase in decomposition rate, whereas increase in hydroxide concentration involves the reaction deceleration. An assumption was made that the decomposition occurs with superimposing of two mechanisms, i.e. chemical and electrochemical decomposition. Basic kinetic characteristics of the process were determined - decomposition rate constant and current density

Energy Technology Data Exchange (ETDEWEB)

This paper proposes the design of LQ-PSS (linear quadratic power system stabilizer) for improving power system stability using genetic algorithm(GA). We are turned weighting matrices of LQ-PSS using GA. To evaluate the usefulness of the proposed method, we performed the nonlinear simulation on a single machine infinite system. As results on a single machine infinite system. As results of the simulation, the proposed method shows the better control performance than CPSS(conventional power system stabilizer) in terms of settling time and damping effects. (author). 7 refs., 7 figs., 3 tabs.

Science.gov (United States)

This article examines problems relating to the calculation of the position of regions of limited solubility of components in the liquid state for four-component systems. An approach based on the use of criterion of stability with respect to diffusion for obtaining equations which describe the region of stratification of the liquid phase in a four-component system is used. The authors used a ES-1020 computer to analyze the critical phenomena in Al-In-P-Sb, Al-Ga-In-P, Al-Ga-In-As, and In-Ga-As-P systems. The position of the spinode in the phase diagram of a four-component system is obtained.

International Nuclear Information System (INIS)

Al, Ga and In complexing with methylthymol blue (H_6R) purified by gel filtration is studied. in the case of metal excess complexes with the ratio of components M:H_6R=2:1 with #lambda#=587(Al), 590(Ga) and 593 nm(In) appear. In the case of reacting agent excess complexes with the ratio of component 1:1 with #lambda#_m_a_x=480-490 (Al) and 480 nm(Ga, In) appear. The mechanism of complexing reactions is studied. Molar extinction coefficients and stability constants are calculated.

International Nuclear Information System (INIS)

The oxygen vacancies distribution in the rigid lattice and the thermally activated motion of oxygen atoms are studied in La1-xSrxGa1-xMgxO3-x (x=0.00; 0.05; 0.10; 0.15 and 0.20) compounds. For that 71Ga, 25Mg and 17O NMR was performed from 100 K up to 670 K, and ion conductivity measurements were carried out up to 1273 K. The comparison of the electric field gradients at the Ga- and Mg-sites evidences that oxygen vacancies appear exclusively near gallium cations as a species trapped below room temperature in local clusters, GaO5/2-#square#-GaO5/2. These clusters decay at higher temperature into mobile constituents of the structural octahedra Ga(O5/6#square#1/6)6/2. At the same time, the nearest octahedral oxygen environment of magnesium cations persists at different doping levels. The case of two adjacent vacant anion sites is found highly unlikely within the ...

Energy Technology Data Exchange (ETDEWEB)

In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

Energy Technology Data Exchange (ETDEWEB)

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Energy Technology Data Exchange (ETDEWEB)

We report the lasing characteristics of gain-guided AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes. At room temperature, continuous-wave operation is achieved over the wavelength range of 657--685 nm with the minimum threshold current at 670 nm. Devices with a 10-[mu]m diameter have threshold currents as low as 1.25 mA at room temperature (297 K) and 0.8 mA at 250 K. In addition, a single predetermined linear polarization state is found, independent of the lasing mode order and operating temperature.

Science.gov (United States)

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of ...

International Nuclear Information System (INIS)

(1976). USSR Lupin, VM Ramazanov, PE Tomskij Gosudarstvennyj Univ.

International Nuclear Information System (INIS)

The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)

Energy Technology Data Exchange (ETDEWEB)

A gain-guiding tapered stripe laser was fabricated using a Ga/sub 0.5/In/sub 0.5/P/(Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 /sup 0/C, an aspect ratio of about 2, and an astigmatism near 25 ..mu..m. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 /sup 0/C with a constant output power of 3 mW.

Energy Technology Data Exchange (ETDEWEB)

Details are given of the Sasol operation in South Africa. Flow sheets are provided for Sasol 1 and Sasol 2 and 3. The Sasol 1 plant produces waxes, liquid fuels, pipeline gas and chemicals; the Sasol 2 and 3 plants primarily produce ethylene, gasoline and diesel fuel. The versatility of the process is emphasized. The product selectivities of the fixed bed and Synthol reactors are shown and the properties of the products are compared. The influence of the catalyst on selectivity is examined.

Energy Technology Data Exchange (ETDEWEB)

The four mines supplying the Sasol-2 plant at Secunda, South Africa are approaching their full production potential of 29 million t/year. Current production is 27.7 million t/year of coal for gasification and steam raising. Three mining methods are employed: bord and pillar, longwall and continuous mining. Details are given of the mining operations and machinery. A 43 km overland conveyor transports the coal to the Sasol plant stockpile.

UK PubMed Central (United Kingdom)

Pneumococcal disease in young children has not been as well characterized in East Africa as it has been in industrialized countries. Although pneumococci are likely to cause substantial mortality...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundWith 2.5 million new HIV infections per year, effective preventive methods against HIV are urgently needed, especially in sub-Saharan Africa. MDP301 is an ongoing trial...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to ...

International Nuclear Information System (INIS)

The subject is reviewed in sections, entitled: introduction (historical); sources of short-lived radionuclides; carbon-11; nitrogen-13; oxygen-15; fluorine-18; bromine-77; iodine-123; astatine-211; other radionuclides (including Ga-67, Ga-68, In-111, In-113m, Tc-99m, and Pb-203). (U.K.).

Science.gov (United States)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, ...

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit ...

International Nuclear Information System (INIS)

The structural changes attendant on intermartensitic transformation in a Ni-Mg-Ga shape memory alloy are considered using magneto-optical visualization with the help of ferrite-garnet monocrystalline films. It is established that on the intermartensitic transformation the complete reorganization of martensite macrostructure fails. Martensite crystals resulted from the basic transformation change somewhat their sizes on intermartensitic transition. The existence of large-scale labyrinth magnetic domain structure is revealed

International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

International Nuclear Information System (INIS)

We use the Generalized Quasi-Chemical Approach (GQCA) combined with ab initio ultrasoft pseudopotential calculations within density functional theory in order to obtain the structural and electronic properties of Al_xGa_yIn_1_-_x_-_yX (X=As, P or N) quaternary alloys in the zincblende structure. Results for the bond lengths show that their variations with composition are approximately linear and that they do not deviate much from the values of the corresponding binary compounds. For the variation of the band gaps, we obtain a bowing parameter b=0.26 eV for the (Ga_0_._4_7In_0_._5_3As)_z(Al_0_._4_8In_0_._5_2As)_1_-_z quaternary alloy lattice matched to InP, in very good agreement with experimental data. In the case of AlGaInN, a bowing parameter of 0.22 eV is obtained for zincblende AlGaInN lattice matched to GaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

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Three field experiments were conducted at the research fields of Plant Protection Research Institute, Iran, at different locations in 2004-2005 to study the efficacy of different broadleaved herbicides to control weeds in wheat. Treatments were the full-season hand weeded and weed-infested controls, and post-emergence applications of florasulam plus flumetsulam at 8.75, 10.50, and 12.25ga.i./ha, 2,4-D plus carfentrazone-ethyl at 210, 245, 280, and 490ga.i./ha, bromoxynil plus MCPA at 75, 100, and 150ga.i./ha, 2,4-D at 560, 720, and 1120ga.i./ha, tribenuron methyl, and 2,4-D plus MCPA. Herbicides were applied at wheat tillering stage. Naturally occurring broadleaved weed populations were used in experiments. Results indicated that bromoxynil plus MCPA at 150ga.i./ha, 2,4-D plus MCPA, and 2,...

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change ...

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In ...

International Nuclear Information System (INIS)

GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

International Nuclear Information System (INIS)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K_#alpha# X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K_#alpha# X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the ...

Energy Technology Data Exchange (ETDEWEB)

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE ...

Energy Technology Data Exchange (ETDEWEB)

The properties and low pressure organometallic vapor phase epitaxy of Ga{sub x}In{sub 1{minus}x}P/(AlGa){sub 0.5}In{sub 0.5}P quantum well (QW) laser diode heterostructures with Al{sub 0.5}In{sub 0.5}P cladding layers, and having wavelength 614 < {lambda} < 690 nm, are described. At longer wavelengths ({lambda} > 660 nm), threshold current densities under 200 A/cm{sup 2} and efficiencies greater than 75% result from a biaxially-compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.

Science.gov (United States)

The Advanced Coal Liquefaction Research and Development Facility in Wilsonville, Alabama, is funded by the US Department of Energy (DOE), the Electric Power Research Institute (EPRI), and Amoco Corporation. On behalf of these organizations, Southern Company Services manages and Southern Clean Fuels Division of Southern Electric International operates the Wilsonville facility. Oak Ridge National Laboratory (ORNL) receives funding from DOE to provide materials technical support to the Wilsonville operators. For the period July 1987 through November 1990 the plant was operated with two reactors a thermal reactor and a catalytic reactor in a close-coupled integrated two-stage liquefaction mode. Coal processed was obtained from several seams including Ohio No. 6, Illinois No. 6, and Pittsburgh No. 8, as well as Texas lignite and several subbituminous coals. Corrosion samples which were removed for examination at the end of this ...

Energy Technology Data Exchange (ETDEWEB)

The biomass research program of the USDA, Southern Agricultural Energy Center is conducted at several locations throughout the United States. A portion of the research is directed toward improved systems to harvest, process and store biomass so that the energy density will be enhanced. Other research projects deal with: conversion and utilization of animal wastes in integrated energy-food production systems, including the production of liquid fuel and feed byproducts; producing low BTU gas to be utilized in internal combustion engines, including the system for continuous feeding of the gasifier; direct combustion of biomass for thermal energy; gasifying biomass so that the products of combustion can pass through a crop being dried without leaving deleterious residues; small scale systems for on-farm expelling of vegetable oil; and studies on the use of vegetable oils for diesel fuel substitutes. In summary, the low energy density of biomass requires that it be used ...

Energy Technology Data Exchange (ETDEWEB)

There are clearly identified scientific requirements for continuous profiling of atmospheric water vapor at the Department of Energy, Atmospheric Radiation Measurement program, Southern Great Plains CART (Cloud and Radiation Testbed) site in northern Oklahoma. Research conducted at several laboratories has demonstrated the suitability of Raman lidar for providing measurements that are an excellent match to those requirements. We have developed and installed a ruggedized Raman lidar system that resides permanently at the CART site, and that is computer automated to eliminate the requirements for operator interaction. In addition to the design goal of profiling water vapor through most of the troposphere during nighttime and through the boundary layer during daytime, the lidar provides quantitative characterizations of aerosols and clouds, including depolarization measurements for particle phase studies.

British Library Electronic Table of Contents (United Kingdom)

Commercial vineyards in southern Spain were surveyed and sampled during October to December 2004 to determine the extent to which common weeds present were suitable hosts of root-knot nematodes infesting soils of those vineyards. Seven weed species commonly growing in grapevine soils in southern Spain were found infected by either Meloidogyne incognita or M. javanica: Amaranthus retroflexus (redroot pigweed), Anchusa azurea (ox-tongue), Chenopodium album (goosefoot), Erodium moschatum (musk stork?s bill), Malva rotundifolia (low mallow), Sinapis alba (white mustard), and Solanum nigrum (black nightshade). The host suitability of the weeds to root-knot nematodes was evaluated on the basis of root galling severity and nematode population densities in soil and roots. Also, the host?parasite r...

British Library Electronic Table of Contents (United Kingdom)

Eshkaft-e Gavi is a cave located in the southern Zagros Mountains of Iran and is one of the few archaeological sites in the region to preserve both Middle Paleolithic and Upper Paleolithic occupations. Excavation of the site in the 1970s yielded an assemblage of lithic and faunal remains, including ten hominin specimens: a mandibular molar, four cranial fragments, a clavicular diaphysis, the proximal half of a metacarpal, a fragment of os coxa, the proximal diaphysis of a juvenile femur, and a patella. The bones derive from a minimum of four individuals, including two juveniles. Although many of these remains could be Epi-Paleolithic in age, one of the juvenile specimens-the mandibular molar-occurs at the base of the caves Upper Paleolithic sequence. The remains are very fragmentary, but t...

British Library Electronic Table of Contents (United Kingdom)

Abstract Background. Complementary and alternative medicine (CAM) use is common among breast cancer patients. Several CAM therapies may have negative side effects or interact with conventional therapies. We studied biologically based CAM use with and without vitamins/minerals in relation to patient and tumor characteristics as well as treatment in an ongoing prospective cohort of 855 primary breast cancer patients. Methods. Patients from two hospitals in southern Sweden were included. Pre-operative and follow-up questionnaires containing questions on food intake, lifestyle, and concomitant medications, including natural remedies, were completed up to five years postoperatively. Clinical information was obtained from clinical records and tumor characteristics from pathology reports. Results...

British Library Electronic Table of Contents (United Kingdom)

Human activities in the karst Ozark Plateaus can impact water quality of springs where surface water is rapidly transferred to subsurface conduits. Bennett Spring, in southern Missouri, is the fourth largest spring in the state and supports local tourism activities. Questions regarding poorly functioning on-site wastewater systems (OWS) have raised concerns over the long-term water quality of the spring. This study reports the results of a surface water quality monitoring program in the recharge area where monthly samples were collected at base flow to identify potential pollution sources to the spring. Base flow hydrology of the recharge area was highly variable over the study period, which was drier than normal, causing an incomplete sampling record due to no flow conditions at some site...

British Library Electronic Table of Contents (United Kingdom)

Abstract Large areas of the southern European countries possess a Mediterranean climate, which influences soil properties, land use, fertilizer application practices and pathways of phosphorus (P) loss from agricultural soils. On average, inputs of fertilizer P exceed P exports from the agricultural areas in these countries; however, large differences in P surplus/deficit and soil P test values exist among regions. Losses of P in drainage water are modest except in some irrigated areas and in those regions where intensive animal production is concentrated. Losses of P in runoff water, whether as dissolved reactive or particulate P, can be substantial as a result of the significance of erosive processes under the land uses typical of the Mediterranean region, where extreme rainfall events c...

Science.gov (United States)

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser ...

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

Science.gov (United States)

High microwave power (1,000 W) electron cyclotron resonance CH{sub 4}/H{sub 2}/Ar discharges produce etch rates for In{sub 0.5}Ga{sub 0.5}P, Al{sub 0.5}In{sub 0.5}P{sub 0.5}, and Al{sub 0.5}Ga{sub 0.5}P of {approximately} 2,000 {angstrom}/min at moderate RF power levels (150 W) and low pressure (1.5 mTorr). This is approximately a factor of five faster than for conventional reactive ion etching conditions where much higher ion energies are necessary. The etched surfaces are smooth over a wide range of CH{sub 4}-to-H{sub 2} ratios and microwave powers. AlInP is more resistant to preferential loss of P from the near-surface during etching than is InGaP. While the etching is ion-driven, pure Ar discharges produce rough surfaces and the CH{sub 4}/H{sub 2} is necessary in the achievement of acceptable morphologies. The InGaAlP/GaAs heterostructure is being increasingly utilized in diode lasers, light ...

International Nuclear Information System (INIS)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that ...

Energy Technology Data Exchange (ETDEWEB)

In 1980, Congress passed the energy security act which created the United States Synthetic Fuels Corporation. This entity was created to serve as a catalyst for the development of synthetic fuels projects by the private sector. Then what happened. Increased exploration in the United States stimulated by relaxation of price controls on oil produced an increase in reserves of these resources. Fuel conservation, combined with a reduced energy demand caused by a recession, significantly reduced our overall energy consumption and curtailed our imports of foreign crude oil. All of these factors combined have reduced the enthusiasm to invest in synthetic fuels plants, in spite of the fact that the difference between surplus and shortage is frighteningly thin. South Africa, compared to the U.S., is a small country. The Sasol Two and Sasol Three projects are equivalent to a U.S. investment of $400 billion, on a country size-by-size basis. It's hard to believe that ...

Energy Technology Data Exchange (ETDEWEB)

[sup 203]Pb-chloride is a promising imaging agent for tumour scanning because of the large retention value for tumour tissue and the small value for normal organs, but the large value for the kidneys and bone is a shortcoming. The retention value of [sup 203]Pb in tumour tissue is larger than that of [sup 201]Tl and smaller than that of [sup 67]Ga. The tumour/inflammatory lesion retention ratio for [sup 203]Pb is very large in comparison with those for [sup 67]Ga and [sup 201]Tl. [sup 203]Pb accumulates to a large extent in viable tumour tissue, and less in necrotic tumour tissue and in inflammatory lesion. (author).

International Nuclear Information System (INIS)

The influence of 3d-transition metal impurities on the superconducting properties of the A-15 compounds V_3Si and V_3Ga have been investigated. In the case of V_3Si, the Fe impurities replacing V were found to have a local moment. A compensation effect was found in this case, resulting in a 20KOe increase in the upper critical field at dilute concentrations of Fe. It was demonstrated that long range order V_3Ga possessed higher transition temperature and upper critical field than found hitherto. Investigations on Nb_3Ge/sub 1-x/Ga/sub x/ films obtained by chemical vapor deposition has clearly shown the relation between the transition temperature and structural characteristics. The influence of generalized defects on the superconducting properties in A-15 type Nb_3X compounds has been discussed.

International Nuclear Information System (INIS)

Low energy (<100 eV) Ar"+ ion bombardment of the growing film during the deposition of amorphous GaSb+Ge mixtures was found to affect both the transformation rate kinetics as well as the reaction path during subsequent annealing. Ion bombardment induced collisional cascades resulted in more random mixing in the growing films thus retarding the rate of the amorphous to equilibrium state phase transformation during annealing and allowing the formation of homogeneous metastable randomly oriented single phase (GaSb)/sub 1-x/Ge/sub x/ alloys. The films were approx.1.5 #mu#m thick and the average grain size in the metastable state was approx.300 A.

International Nuclear Information System (INIS)

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

Energy Technology Data Exchange (ETDEWEB)

The strongly localized one-electron (D{sup 0}) and two-electron (D{sup -}) donor states are considered with the lattice deformation around the donor center taken into account. For GaAs, donor energy levels have been calculated as functions of the hydrostatic pressure. The calculated energy positions and pressure coefficients agree with the experimental data. It is shown that the interaction with phonons reduces the probability of radiative transitions between the states of different localization and leads to the metastability of shallow-level donor states with respect to the D{sup -} state in GaAs and both the states (D{sup 0} and D{sup -}) in CdF{sub 2}. (author) 7 refs, 1 fig

International Nuclear Information System (INIS)

In this paper, a Kramers-Kronig (KK) analysis of infrared (IR) reflectance spectrum of quaternary In_0_._0_1Al_0_._0_6Ga_0_._9_3N film grown by molecular beam epitaxy (MBE) is reported. The infrared measurement is performed in the reflection mode at an incident angle of 15 degree sign by Fourier transform infrared (FTIR) spectroscopy at T = 300 K. The Kramers-Kronig analysis of the reflectivity data has been used to obtain the real and imaginary parts of the index of refraction (n and k), and the real and imaginary parts of the dielectric response function (#epsilon#' and #epsilon#') of the materials. Finally, the transverse optical and longitudinal optical phonons for quaternary In_xAl_yGa_1_-_x_-_yN were obtained.

Energy Technology Data Exchange (ETDEWEB)

Computer simulations of two-junction, concentrator tandem solar cell performance show that IR-sensitive bottom cells are required to achieve high efficiencies. Based on this conclusion, two novel concentrator tandem designs are under investigations: (1) a mechanically stacked, four-terminal GaAs/GaInAsP (0.95 eV) tandem, and (2) a monolithic, lattice-matched, three-terminal InP/GaInAs tandem. In preliminary experiments, terrestrial concentrator efficiencies exceeding 30% have been achieved with each of the above tandem designs. Methods for improving the efficiency of each tandem type are discussed. (orig.).

International Nuclear Information System (INIS)

Nanocrystalline powders of GaN with grain sizes ranging from 2 to 30 nm were examined under high external pressures by in situ diffraction techniques in a diamond anvil cell at DESY (HASYLAB, Station F3). The experiments on densification of pure powders under high pressure were performed without a pressure medium. The mechanism of generation and relaxation of internal strains and their distribution in nanoparticles was deduced from Bragg reflections recorded in situ under high pressures at room temperature. The microstrain was calculated from the full-width at half-maximum (FWHM) values of the Bragg lines. It was found that microstrains in GaN crystallites are generated and subsequently relaxed by two mechanisms: generation of stacking faults and change of the size and shape of the grains occurring under external stress. (author)

International Nuclear Information System (INIS)

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

Science.gov (United States)

A 5 GHz GaAs monolithic astable multivibrator-type voltage-controlled oscillator has been developed. The monolithic oscillator uses 2 micron long self-aligned TiW-silicide gate MESFETs as well as GaAs Schottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X-band oscillation frequency can be obtained with 1 micron long gate FET and low loss resonance inductors.

International Nuclear Information System (INIS)

The mine dumps that arise from the gold mining operations in South Africa are a potential source of high concentrations of radon (222"Rn). Studying the diffusion of radon and the emanation from the soil will help to deduce the radon flux from these dumps to identify the problem areas for rehabilitation. This study describes measurements of the emanation coefficient and the modelling of the depth profile of the radon activity concentration, which is compared to a depth profile that was measured on such a mine dump. Emanation coefficients ranging from 0.13 to 0.39 have been obtained.

Science.gov (United States)

The fact that South Africa had no commercially significant deposits of crude oil necessitated the early development of production of gasoline from coal which was present in abundance in low to medium grade in thick seams, the development of the process since the early 1950s is discussed. Both the Fischer Tropsch and Lurgi processes are used, and three large plants named Sasol One, Two, and Three have been completed. A flow diagram for the Lurgi process as used in these plants is included. Typical products and their properties resulting from the Sasol-type Synthol operation are presented in tabular form. Marketing considerations and economics of production of the Sasol products are discussed briefly. (BLM)

Energy Technology Data Exchange (ETDEWEB)

A discussion of the Sasol I, II, and III coal liquefaction plants of the Republic of South Africa was presented. The technology, capacity, and economics of these projects were included in the discussion. These plants utilize the Fischer-Tropsch process of indirect coal liquefaction and produce a barrel of synthetic crude for about $55 (or about $20 above current market prices). Outlines of the differences in indirect coal liquefaction and newer direct methods were presented. It was determined that the South African dedication to coal liquefaction was made more for the political aspects of energy independence than economics.

International Nuclear Information System (INIS)

This report documents a case history in which a cadaver and the associated burial objects were found well preserved after being buried for more than 2100 years in Southern China. The preservation is attributed to a layer of kaolin that surrounded the coffin and served as a barrier to water and air movement. The implications for the disposal of nuclear fuel waste are discussed.

Energy Technology Data Exchange (ETDEWEB)

The US$360 million project to increase gas supplies to Eastern and Southern Thailand is discussed, and the use of international competitive bidding to purchase the line pipe and other facilities is reported. The government approved proposal for a gas fired combined-cycle power station and gas separation plant are discussed. (UK).

UK PubMed Central (United Kingdom)

Broiler chickens from eight commercial farms in Southern Finland were analyzed for the structure of their gastrointestinal microbial community by a nonselective DNA-based method, percent G+C-based...Full Text Available

UK PubMed Central (United Kingdom)

Two sequences with homology to a thioredoxin oligonucleotide probe were detected by Southern blot analysis of Anabaena sp. strain PCC 7120 genomic DNA. One of the sequences was shown to code for a protein...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Within the Westeuropean network of the electric current supply a continuing compensation is necessary with respect to the permanent alterations of capacity and frequency. Pumped-storage plants are of considerable significance to meet these requests. The Schluchseewerk AG, Freiburg/Breisgau, has among others five pumped-storage plants in the southern part of the Black Forest. The conception and the operation of them are described. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The coal mining district in southeastern Santa Catarina State is considered one of the most polluted areas of Brazil. The author has identified significant preliminary results on the application of MSS-LANDSAT digital data to monitor the coal refuse areas and its environmental consequences in this region.

Energy Technology Data Exchange (ETDEWEB)

Yellow-emitting pulsed laser operation of an Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P/Al/sub 0.16/Ga/sub 0.36/In/sub 0.48/P/ Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm/sup 2/ for a diode with a Si/sub 3/N/sub 4/ insulated 8-..mu..m-wide and 250-..mu..m-long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.

International Nuclear Information System (INIS)

AlGaInP epitaxial layers grown at 690 degree C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the #left brace#111#right brace# directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, ...

International Nuclear Information System (INIS)

The electronic band structure, transport properties, and lattice dynamics in AuX_2 (X = Al, Ga and In) under high pressure have been extensively studied with full potential linearized augmented plane wave and pseudopotential plane wave methods. The theoretical results for the electronic band structure and Fermi surface reveal pressure-induced electronic topological transitions (ETTs) in AuGa_2 and AuIn_2, while they are absent in AuAl_2, in excellent agreement with the experimental observations. Moreover, calculations of the transport properties at different pressures reveal subtle changes in the band structure close to the Fermi surface of the three intermetallic compounds. It is clear that the anomalies in transport properties are due to ETTs. Interestingly, a pressure-induced soft transverse acoustic (TA) phonon mode is identified only in AuGa_2. The TA phonon instability at the Brillouin zone boundary L point might be ...

Energy Technology Data Exchange (ETDEWEB)

The temperature dependence of T/sub 1/ spin-lattice relaxation time on /sup 51/V, /sup 69/Ga, /sup 71/Ga and Knight shift on /sup 51/V and /sup 29/Si nuclei in polycrystalline V/sub 3/Si, V/sub 3/Ga, V/sub 3/Ge and in the monocrystal V/sub 3/Si in normal state is investigated. For V/sub 3/Si and V/sub 3/Ga a rapid growth (T/sub 1/T)/sup -1/ is observed with temperature decrease while for V/sub 3/Ge the maximum (T/sub 1/T)/sup -1/ at T approximately equal to 60 K has been found. The temperature dependence peculiarities have been discussed on the basis of theoretical models available and zone structure calculations for A-15 compounds. The T/sub 1/ anisotropy and possibility of its experimental discovery are considered. Anisotropic contribution in (T/sub 1/T)/sup -1/ and contributions of d states of different symmetries into the electron state density at the Fermi level are estimated for V/sub 3/Si from ...

Energy Technology Data Exchange (ETDEWEB)

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the extended defects and on ...

UK PubMed Central (United Kingdom)

Genetic algorithms (GA) were used to develop specific copper metal-ligand force field parameters for the MM3 force field, from a combination of crystallographic structures and ab initio...Full Text Available

Science.gov (United States)

We report the growth and fabrication of midwave infrared InAs/GaSb strain layer superlattice (SLS) detectors. Growth of alternate interfaces leads to a reduced strain between the GaSb buffer and SLS ({delta}a{sub parallel}/a=-5x10{sup -4}), enabling the growth of active regions up to 3 {mu}m (625 periods). The structural, optical, and electrical properties of the active region were characterized using x-ray crystallography and photoluminescence, respectively. p-i-n detectors were grown using 625 periods of 8 ML (monolayer) InAs/8 ML GaSb as the active region. The {lambda}{sub cutoff} for the detectors was 4.6 {mu}m with a conversion efficiency of 32% at V{sub b}=-0.2 V. Detectivity was obtained using noise power spectral density measurements under 300 K 2{pi} field of view illumination and was equal to 5.2x10{sup 10} and 3x10{sup 10} cm Hz{sup 1/2}/W (V{sub b}=-0.02 V, T=80 K) in the white noise and 1/f noise limit (at 50 ...

International Nuclear Information System (INIS)

Liquid metal ion sources (LMISs) with Ga as ion species are widely used in focused ion beam (FIB) technology for micromachining and surface treatment on the sub-micron and nano-scale. Key features of a LMIS for investigating mechanical properties and 3D-microfabrication of materials are long life-time, high brightness, stable ion current and a highly effective milling ability for the material to be modified. In order to increase the material removal rate, heavier ions than Ga and their clusters should be applied. Bismuth (Bi) is the heaviest, non-radio-active element in the periodic table, is non-toxic and exhibits a low melting point. We have thus produced a long-life (about 1000 h) Bi LMIS with a good beam performance, applicable in any FIB system. Since Bi is the only element in this source, it is not necessary to separate it from other ions by a mass filter. Investigation of the sputtering rate of NiTi shape memory alloys using ...

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction ...

Science.gov (United States)

A high power AlGaInP single quantum well graded index separate confinement heterostructure. It comprises a substrate and a multiplicity of layers deposited thereon comprising a single Ga{sub x}In{sub x}P quantum well where x has a value from about 0.4 to about 0.6; multiple graded index regions on both sides of the quantum well and cladding layers adjacent to each graded region of the well, the graded region comprising Al{sub y}(Ga{sub 1{minus}y}){sub 0.5}In{sub 0.5}P quaternary alloy; wherein the value of y in the graded region varies from about 0.2 at the quantum well/graded region interface to up to about 0.6 for the cladding layers/graded index regions; the heterostructure having a low broad area threshold current with pulsed thresholds in the range from about 1 to about 2 Amps/cm{sup 2} and a differential efficiency of from about 20 to about 60 percent.

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with ...

Science.gov (United States)

Direct coupljng between Al and Au metal]jzations can result in an increase in gate resistance due to a metallurgical reaction. (purple plague). An RF life test on ...

Science.gov (United States)

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

International Nuclear Information System (INIS)

Samples prepared using the focused ion beam (FIB) inevitably contain the surface damage induced by energetic Ga"+ ions. An effective method of removing the surface damage is demonstrated using a plasma cleaner, a device which is widely used to minimize the surface contamination in scanning transmission electron microscopy (STEM). Surface bombardment with low-energy Ar"+ ions was induced by biasing the sample immersed in the plasma source, so as to etch off the surface materials. The etch rates of SiO_2, measured with a bias voltage of 100-300 V, were found to vary linearly with both the time and bias and were able to be controlled from 1.4 to 9 nm/min. The removal of the Ga residue was confirmed using energy dispersive spectroscopy (EDS) after the plasma processing of the FIB-prepared sample. When the FIB-prepared sample was processed via plasma etching for 10 min with a bias of 150 V, the surface Ga damage was completely ...