Energy Technology Data Exchange (ETDEWEB)

This patent describes a process for the conversion of low molecular weight alkanes to higher molecular weight hydrocarbons. It comprises: contacting the low molecular weight alkanes, at an elevated temperature, with oxygen and a catalyst of the formula Zn{sub a}A{sub b}M{sub c}M'{sub d}O{sub x} wherein A is Li, Na, K, or mixtures thereof; M is Al, Ga, Cr, La, Y, Sc, V, Nb, Ta, Cu or mixtures thereof; M' is Cs, Rb, Mg, Ca, Sr, Ba, Sm, Pb, Mn, Sb, P, Sn, Bi, Ti, Zr, Hf, or mixtures thereof; a if from about 1 to about 20; b is from about 0.1 to about 20; c is from about 0 to about 5 d is from about 0 to about 20, and x is a number needed to fulfill the valence requirements of the other elements; provided that at least one c and d is a t least 0.1; and when M' is Sn, c must be at least 0.1.

Energy Technology Data Exchange (ETDEWEB)

CERN has encouraged the US-LARP collaboration to participate in Phase I of the LHC luminosity upgrade by analyzing the benefits gained by using Nb3Sn technology to replace the functionality of select NbTi magnets that CERN is committed to construct. Early studies have shown that the much higher gradients (shorter magnetic lengths) and temperature margins (quench stability) of Nb3Sn magnets compared to their NbTi counterparts is favorable--allowing the insertion of additional absorbers between Q1 and Q2, for example. This paper discusses the relative merits of the NbTi and Nb3Sn options.

Science.gov (United States)

Development efforts have been undertaken to improve the processing and structural efficiencies of

Energy Technology Data Exchange (ETDEWEB)

A single crystalline ternary nanostructure having the formula A.sub.xB.sub.yO.sub.z, wherein x ranges from 0.25 to 24, and y ranges from 1.5 to 40, and wherein A and B are independently selected from the group consisting of Ag, Al, As, Au, B, Ba, Br, Ca, Cd, Ce, Cl, Cm, Co, Cr, Cs, Cu, Dy, Er, Eu, F, Fe, Ga, Gd, Ge, Hf, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Tc, Te, Ti, Tl, Tm, U, V, W, Y, Yb, and Zn, wherein the nanostructure is at least 95% free of defects and/or dislocations.

International Nuclear Information System (INIS)

(Dec 1970). United States Feeney, JA Boeing Co., Renton, Wash.

International Nuclear Information System (INIS)

K and L-shell x-ray production cross sections were measured using #alpha#-particle beams of 14.00 to 34.16 MeV. The K-shell measurements ranged from Z = 20 to Z = 50 and included Ca, Sc, Ti, V, Fe, Ni, Cu, Zn, Ga, Br, Rb, Sr, Y, Mo, Ag, In, and Sn while the L-shell measurements ranged from Z = 55 to Z = 92 and included Cs, Ba, Ce, Gd, Tm, Lu, Au, Pb, Th, and U. Thin metallic foils were used for the measurements and corrections for self-attenuation were negligible. A liquid nitrogen cooled Si(Li) detector and associated pulsed optical electronics were used in detecting x-rays. Absolute cross sections with an uncertainty of +-10 percent are presented for the elements measured. Also smoothed cross sections are presented which were generated by a three term polynomial fit of the experimental data points. By use of available fluorescence yields the K-shell data were converted to ionization cross sections and compared to various ...

International Nuclear Information System (INIS)

The A-15 compounds with the highest critical temperatures and critical fields are stable only at high temperatures and sometimes are not stable at any temperature. Fabrication of such materials thus necessarily involves the creation and manipulation of metastable phases. It follows that the bronze matrix technique now under development for Nb_3Sn- and V_3Ga-based composite superconductors is not suitable for high-T/sub c/ materials of the Nb_3 (Al, Ge, Ga, Si) family. Alternative technologies will be necessary for such materials. Efforts to develop suitable alternatives, using Nb_3Al, are described.

Energy Technology Data Exchange (ETDEWEB)

Powders with nominal compositions (in atomic percent) Ti-48Al and Ti-48Al-2Nb-2Cr were prepared by the plasma rotating electrode process (PREP) and gas atomization (GA) techniques. As-solidified and heat-treated (1000degC per 3 h) powder samples were examined by metallography, scanning electron microscopy, X-ray diffraction and transmission electron microscopy. The microstructures of the powders were characterized as a function of atomization technique, alloy content, powder particle size (solidification rate) and thermal history. All of the as-solidified powders were comprised of disordered [alpha], and ordered [alpha][sub 2]-Ti[sub 3]Al and [gamma]-TiAl. For both alloys, a larger volume fraction of [alpha] and [alpha][sub 2] was observed in the PREP powders relative to GA powders of comparable size. Additionally, for both alloys and both atomization ...

Energy Technology Data Exchange (ETDEWEB)

The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min{sup -1}. The transformation to the amorphous state begins at 140 K and is completed near room temperature. The {beta}-Sn type structure was shown to represent only the mean lattice of the high-pressure GaSb-II phase. The superstructure of this phase widely varied with temperature and is caused by the ordered displacement of atoms. The temperature range of the metastable crystalline phase relaxation is divided into three intervals according to the temperature dependence of the tetragonality ratio (c/a). At the boundaries of these temperature intervals, i.e. temperatures T = 170 and 230 K, two second-order phase transitions are observed. Anomalous heat and volumetric effects were observed earlier by ...

Science.gov (United States)

Ti-Pd-Ag, Ni-Cu-Sn. Back cover. Tedlar, mylar, T-P-T. Tedlar, T-P-T, glass, i. T -AI-T. P-AI-T, T-AI-T,white RTV. Frame. AI, stainless steel ...

International Nuclear Information System (INIS)

A survey is given on studies of the phonon spectra of several A-15 compounds by inelastic neutron scattering on polycrystalline samples. Comparison of the results for V_3Si, V_3Ge, N_3Ga, Nb_3Sn and Nb_3Al at 297 K lead to the conclusion that the interatomic forces are to a good approximation the same for all compounds with 4.75 valence electrons but are reduced by about 20% for those with 4.5 valence electrons. For all compounds investigated a softening of the phonon frequencies on cooling is observed which is most pronounced for those materials with the highest T/sub c/ values. From a comparison of the results with the experimentally determined Eliashberg function of Nb_3Sn information is derived about the energy dependence of the electron-phonon coupling function #alpha#"2.

Energy Technology Data Exchange (ETDEWEB)

Particulate Reinforced Titanium matrix composites (PRTi) exhibit some improved specific mechanical properties in comparison with those of unreinforced titanium alloys as a result of the combination of the high strength and stiffness of ceramic particles with the toughness and damage tolerance provided by the metal matrix. The poor tribological properties of the titanium exclude titanium alloys from applications where wear resistance is required (brakes, rotating parts, sliding parts). The addition of ceramic particles improves the tribological properties of metals sensitive to adhesive and /or abrasive wear significantly. In this work, the wear resistance and the friction coefficient of Ti6Al-6V-2Sn reinforced with TiC particles and Ti6Al-4V reinforced with SiC particles (prototype material) are compared with the unreinforced alloys. Pin on disc and pin on ring tests were carried out against standard ...

Energy Technology Data Exchange (ETDEWEB)

A number of materials of composition YSr{sub 2}Cu{sub 3-x}MxO{sub 7{+-}y} with M = Ti, Fe, Co, Al, Ga and Pb were prepared by solid state reactions. They belong to the tetragonal P4/mmm space group and their unit cell parameters were determined and refined from X-ray powder data. The infrared spectra of the compounds were also recorded and are briefly discussed on the basis of their structural characteristics and by comparison with those of related materials. (orig.) 23 refs.

International Nuclear Information System (INIS)

Brittleness and poor low-temperature thermal conductivity of A-15 compounds remain the major obstacles preventing the effective use of these superconductors in large-scale engineering applications. In order to circumvent these difficulties, a new type of ductile superconducting filamentary alloy has been developed recently by a simple metallurgical process which consists of melting the constituent elements and subsequent cold working and appropriate heat treatment. These superconducting materials are essentially Cu-base alloys containing a few percent of A-15 phase such as Nb_3Sn or V_3Ga which is in the form of fine filaments embedded in the Cu matrix. The emphasis of this work is on the formation of the A-15 phase in the Cu-base alloys and its correlation with superconducting properties such as transition temperature and critical current density. The formation of Nb_3Sn, Nb_3Al, V_3Si, and V_3Ga will ...

International Nuclear Information System (INIS)

We have performed self-consistent (SC) band structure calculations for the A15 compounds V_3X and Nb_3X, X = Al, Ga, Si, Ge, and Sn, using the augmented-plane-wave (APW) method. Relativistic effects (except the spin-orbit interaction) have been included in each SC cycle, along with corrections to the usual muffin-tin approximation. The latter apply the APW wave functions outside of the muffin-tin spheres to compute the interstitial charge densities and potentials. The resulting interstitial potential has full cubic symmetry (no spherical averaging), although a spherically averaged muffin-tin form is retained inside the spheres. The final SC potentials were used to generate energies and wave functions on a cubic mesh of 35 k points in 1/48th of the Brillouin zone. These results were interpolated onto a finer mesh of 969 k points using a symmetrized Fourier method; the densities of states (DOS), N (E), were determined using tetrahedral ...

Science.gov (United States)

A 5 GHz GaAs monolithic astable multivibrator-type voltage-controlled oscillator has been developed. The monolithic oscillator uses 2 micron long self-aligned TiW-silicide gate MESFETs as well as GaAs Schottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X-band oscillation frequency can be obtained with 1 micron long gate FET and low loss resonance inductors.

International Nuclear Information System (INIS)

In this study, SnO2 thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (Ts = 440 oC). The precursors were methanol CH4O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T(?) and reflectance R(?) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity ?AB. The obtained value: ?AB ? 23.4 m3 s-1 helped situating the performance of the as-grown SnO2 compound among most known PV-T oxides like ZnO and TiO2.

British Library Electronic Table of Contents (United Kingdom)

This study investigates the applicability of n-type TiO2 and p-type NiO on the FTO-glass (Fluorine doped tin oxide, SnO2:F) substrate of the working electrode in a dye-sensitized solar cell (DSSC). The working electrode was designed and fabricated by depositing a film of TiO2/NiO composite particles, which were prepared by mixing the Ni powder with TiO2 particles using dry mixing method, on a FTO-glass substrate using a spin coating process. The working electrode was then immersed in the solution of N-719 (Ruthenium) dye at a temperature of 70degreeC for 6h. Moreover, a thin film of platinum (Pt) was deposited on the FTO-glass substrate of the counter electrode using an E-beam evaporator. Finally, the DSSC was assembled, and the short-circuit photocurrent, the open-circuit photovoltage and...

International Nuclear Information System (INIS)

Phase transformations occuring during cold deformation in hardened #alpha#+#beta# titanium alloy of the Ti-Al-Mo-Zr-Sn-Si system with 10% summary content of alloying elements are studied by X-ray diffraction analysis. Two stages of trapsformation of metastable #alpha#''-phase are found. A conclusiop is made that ability of the alloy containing #alpha#''-phase to cold deformation is determined by the presence of favourable texture, by high degree of metastability and by volume portion of #alpha#''-phase in the alloy structure.

Science.gov (United States)

For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be ...

Energy Technology Data Exchange (ETDEWEB)

Future insertion quadrupoles with large apertures and high gradients will be required for the Phase II luminosity upgrade (10{sup 35} cm{sup -2}s{sup -1}) of the Large Hadron Collider (LHC). Although improved designs, based on NbTi, are being considered as an intermediate step for the Phase I upgrade, the Nb{sub 3}Sn conductor is presently the best option that meets the ultimate performance goals for both operating field and temperature margin. As part of the development of Nb{sub 3}Sn magnet technology, the LHC Accelerator Research Program (LARP) developed and tested several 1-meter long, 90-mm aperture Nb{sub 3}Sn quadrupoles. The first two series of magnet used OST MJR 54/61 (TQ01 series) and OST RRP 54/61 (TQ02 series) strands. The third series (TQ03) used OST RRP 108/127 conductor. The larger number of sub-elements and the consequent reduction of the effective filament size, together with an ...

International Nuclear Information System (INIS)

It has recently been shown that the superconducting properties of Nb-base A-15 compounds, A_3B, are severely degraded when exposed to high-energy (E>1 MeV) neutron irradiation at ambient reactor temperatures. In each case, superconducting transition temperatures, Tsub(c), and the Bragg Williams order parameters, S, were observed to decrease steadily with irradiations in excess of 10"1"8 nvt. During irradiation the A-15 structure is retained and subsequent isothermal annealing restores almost completely the compound's original Tsub(c) value. In this letter a correlation between B atom diameter and the recovery rates of Tsub(c) for the irradiated materials Nb_3Ge, Nb_3Ga, Nb_3Al and Nb_3Sn is reported. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

Nanoscale islands of Cu2O have been synthesized on single-crystal SrTiO3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (OPA-MBE). Island growth location has been controlled by using an ex-situ Ga+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. Analysis of Cu2O dot growth on unmodified substrate regions revealed an evolution of dot size and array density. Atomic force microscopy studies show that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of islands. Islands initially formed in the FIB-generated surface topography and filled those features before nucleating on neighboring unmodified surface regions.

Energy Technology Data Exchange (ETDEWEB)

Nanoscale islands of Cu?O have been synthesized on single crystal SrTiO? (100) substrates using oxygen plasma assisted molecular beam epitaxy (MBE). Island growth location has been controlled by using an ex-situ Ga? focused ion beam (FIB) to modify the growth surface in discrete locations prior to island sythesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex-situ AFM study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.

Energy Technology Data Exchange (ETDEWEB)

The magnetic properties of a single crystal of SmNiSn with the orthorhombic {epsilon}-TiNiSi-type crystal structure have been investigated by magnetic susceptibility, magnetization and electrical resistivity measurements from 1.5 K to room temperature. Two anomalies have been found in the magnetic susceptibility, indicating an antiferromagnetic phase transition at T{sub N}=9.4 K and a second transition at 4.4 K. A large magnetic anisotropy has been found at low temperatures in the temperature and field dependencies of magnetic susceptibility and magnetization. Below 80 K, the easy axis of the magnetization is the c-axis. At T=2.0 K, the c-axis magnetization curve exhibits metamagnetic-like behavior at H{sub c}=42 kOe and reaches 0.54 emu/g at H=55 kOe, whereas for the a- and b-axis the magnetization is linear and smaller. The paramagnetic susceptibilities do not follow the Curie-Weiss law suggesting a large van Vleck contribution of the Sm ...

International Nuclear Information System (INIS)

The fatigue life variability of the #alpha#+#beta# titanium alloy, Ti-6Al-2Sn-4Zr-6Mo increased with decreasing stress level. The variability in life was found to be due to segregation of lives due to two failure mechanisms. A bimodal cumulative distribution model was shown to accurately describe the combined failure modes. The nominal failure processes for the two regimes were similar, with crack nucleation occurring in equiaxed #alpha#p particles, irrespective of life or stress level. However the variability in life was not controlled by the size of the crack-nucleating #alpha#p, but rather by the ability of the material to distribute deformation and avoid early crack nucleation.

International Nuclear Information System (INIS)

A zirconium alloy comprising from 0.8 to 1.6wt% of Sn, from 0.17 to 0.25wt% of Fe, from 0.15 to 0.25wt% of Cr and from 0.01 to 0.08wt% of Ni and Si at a concentration of 120ppm or lower as an impurity and the balance of Zr is melted into cast pieces and then subjected to an #beta# annealing. It is controlled so as to satisfy Fe + Cr + Ni #<=# 0.52wt%. Then, rolling and annealing are applied so that the total heat injection amount #SIGMA#A_i to the materials is within a range of from 1 x 10"-"1"9 to 1 x 10"-"1"7. #SIGMA#A_i = #SIGMA#t_i #centre dot# exp(-Q/RT_i), in which t_i represents processing time (hour) at an ith heat treatment step after the #beta# annealing, T_i represents a processing temperature (K) in the step i. Q represents an activating energy, R represents a gas constant, and Q/R 40,000. (I.N.).

International Nuclear Information System (INIS)

1 - Description: Format: MATXS. Number of groups: 80 neutron-, 24 photon-groups. 97 Nuclides: 1-H-1, 1-H-2, 2-He-3, 2-He-4, 3-Li-6, 3-Li-7, 4-Be-9, 5-B-10, 5-B-11, 6-C- nat., 7-N-14, 7-N-15, 8-O-16, 9-F-19, 11-Na-23, 12-Mg-nat., 13-Al-27, 14-Si-nat., 15-P-31, 17-Cl-nat., 18-Ar-40, 19-K-nat., 20-Ca-nat., 22-Ti-nat., 23-V-nat., 24-Cr-50, 24-Cr-52, 24-Cr-53, 24-Cr-54, 25-Mn-25, 26-Fe-54, 26-Fe-56, 26-Fe-57, 26-Fe-58, 27-Co-59, 28-Ni-58, 28-Ni-60, 28-Ni-61, 28-Ni-62, 28-Ni-64, 29-Cu-nat., 31-Ga-nat., 39-Y-89, 40-Zr-nat., 41-Nb-93, 42-Mo-nat., 47-Ag-107, 47-Ag-109, 48-Cd-nat., 50-Sn-nat., 63-Eu-151, 63-Eu-153, 64-Gd-152, 64-Gd-154, 64-Gd-155, 64-Gd-156, 64-Gd-157, 64-Gd-158, 64-Gd-160, 73-Ta-181, 74-W-182, 74-W-183, 74-W-184, 74-W-186, 75-Re-185, 75-Re-187, 79-Au-197, 82-Pb-nat., 83-Bi-209, 90-Th-232, 91-Pa-233, 92-U-232, 92-U-233, 92-U-234, 92-U-235, 92-U-236, 92-U-237, 92-U-238, 93-Np-237, 93-Np-238, 94-Pu-238, 94-Pu-239, ...

CERN Document Server

Observations of the Type II-P (plateau) Supernova (SN) 1999em and Type IIn (narrow emission line) SN 1998S have enabled estimation of the profile of the SN ejecta, the structure of the circumstellar medium (CSM) established by the pre-SN stellar wind, and the nature of the shock interaction. SN 1999em is the first and only Type II-P detected at both X-ray and radio wavelengths. It is the least radio luminous and one of the least X-ray luminous SN ever detected (except for the unusual and very close SN 1987A). The Chandra X-ray data indicate non-radiative interaction of SN ejecta with a power-law density profile (rho \\propto r^{-n} with n ~ 7) with a pre-SN wind with a low mass loss rate of ~2 \\times 10^{-6} Msun/yr for a wind velocity of 10 km/sec, in close agreement with radio mass-loss rate ...

International Nuclear Information System (INIS)

The crystallography of #alpha#(hcp) precipitates formed on the #beta#(bcc) matrix grain boundaries has been studied with transmission electron microscopy (TEM) in a Ti-15V-3Cr-3Sn-3Al alloy. The #alpha# precipitates have a near-Burgers orientation relationship with respect to at least one of the adjacent #beta# grains. Among the possible 12 variants in this orientation relationship, the variant that [11 bar 20]_#alpha# is parallel to the _#beta# closest to the grain boundary plane tends to be preferred by the #alpha# precipitates. Additionally, further variant selections are made so as to minimize the deviation of orientation relationship with respect to the ''opposite'' #beta# grain from the Burgers one. Such rules in variant selection often result in the formation of precipitates with a single variant at a planar grain boundary. Prior small deformation of #beta# matrix changes the variant of #alpha# precipitates at the deformed portion of ...

Science.gov (United States)

... information about, utilized, or discussed these subjects: basic topics: overview materials and material types: ti-6al-4v, ti1100, ti17 , ti6242, imi 550 ...

CERN Document Server

NGC 2770 has been the host of three supernovae of Type Ib during the last 10 years, SN 1999eh, SN 2007uy and SN 2008D. SN 2008D attracted special attention due to the serendipitous discovery of an associated X-ray transient. In this paper, we study the properties of NGC 2770 and specifically the three SN sites to investigate whether this galaxy is in any way peculiar to cause a high frequency of SNe Ib. We model the global SED of the galaxy from broadband data and derive a star-formation and SN rate comparable to the values of the Milky Way. We further study the galaxy using longslit spectroscopy covering the major axis and the three SN sites. From the spectroscopic study we find subsolar metallicities for the SN sites, a high extinction and a moderate star-formation rate. In a high resolution spectrum, we also detect ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

The temperature dependences of the heat capacity of commercial titanium VT1-0 and alloys on its base, VT5 and VT5-1, have been derived in the temperature range of 4 to 290 K. For comparison, similar measurements have been conducted on pure titanium and specially prepared solid solutions on its base (Ti+3.7 at.% Al and Ti+0.82 at.% Sn). The measurement accuracy has been sufficient for comparing the results with calculation data. The obtained results are interpreted using the known concepts of the role of the mass of interstitial atoms and changes in the interatomic bond forces. It is shown that the phonon components of the molar heat capacities of solid solutions of Al in titanium have lower values in the entire temperature range, as compared to titanium. The corresponding differences are proportional to the Al concentrations. The lower molar heat capacity in the case of dissolution of Al is due to the low mass of the ...

Energy Technology Data Exchange (ETDEWEB)

The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good ...

Energy Technology Data Exchange (ETDEWEB)

The investigation of interfaces between thin organic films and metal surfaces is a field of highest interest because it represents the basis for future applications of organic electronic devices. In this context, phtalocyanines are of particular interest since repulsive intermolecular interaction was found recently for this group of organic molecules. Tin(II)-phtalocyanine (SnPc) is non-planar and can adsorb in two different geometries: with the Sn atom pointing downwards (Sn down) or upwards (Sn up). In our group different Pc molecules have previously been studied using several experimental techniques like SPA-LEED or XSW. Here we present STM studies of SnPc on Ag(111), taken at different coverages and temperatures, and discuss the results in the context of our previous findings. At low coverages the formation of chains can be observed for Sn down molecules ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

Energy Technology Data Exchange (ETDEWEB)

For a wider application of GaAs single crystals for semiconductor devices a cheaper process to grow crystals with high purity and low dislocation density is required. According to todays knowledge the Czochralski method with a hot wall vessel should be the choice. The temperature of the vessel has to be 700deg C to avoid condensation of arsenic which vapourizes from the 1240deg C hot melt. Arsenic vapour is very agressive against all metals. Therefore the corrosion resistance of metals and alloys with a high melting point and also ceramics has been tested. All the alloys under investigation are corroded severely so that they have to be excluded as a material for the vessel. The metals tantalum, molybdenum and tungsten are more resistent, titanium forms initially a thick protection layer and further corrosion is greatly reduced. The ceramics investigated (TiB{sub 2}; ALN; Makor; BN) are not attacked by arsenic though they may store some arsenic. ...

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

Energy Technology Data Exchange (ETDEWEB)

Ophiolitic rocks occur as wall rocks of the 2.7 Ga Louis Lake batholith near Atlantic City, Wyoming. All of the Archean rocks are strongly deformed and metamorphosed to a greenschist and amphibolite facies, but relict structures and textures are commonly preserved. These include the following, from west to east: (1) metadiabase with rare coarse-grained metagabbro; (2) ultramafic rocks and metagabbro; (3) amphibolite, locally pillowed, overlain(.) by pelitic schist, banded iron formation, and quartzite; and (4) pillow lavas, massive sills or flows, and minor metasedimentary rocks. Slice 1 locally contains parallel dike margins and rare metagabbro screens; these features suggest that it may represent a sheeted dike complex. Slice 2 locally contains ultramafic rocks having relict cumulus textures and igneous layering, corresponding to the cumulus portion of an ophiolite. The pillow lavas of slice 4 and possibly slice 3 are interpreted as comprising the extrusive ...

Energy Technology Data Exchange (ETDEWEB)

The differential cross sections for neutron emission in the reactions {sup 115}In(p,xn), {sup 115}In(d,xn), and {sup 113}Cd({alpha},xn) are measured and analyzed for proton energies 11.2 and 22.2 MeV, deuteron energy 22.3 MeV, and {alpha}-particle energies 26.8 and 45.2 MeV, respectively. The parameters of the nuclear-level density in the Fermi-gas model with negative energy shift are determined for the {sup 113}Sn, {sup 114}Sn, {sup 115}Sn, and {sup 116}Sn nuclei over a wide range of excitation energies. Analysis is performed in a statistical model that uses the Hauser-Feshbach mathematical formalism to describe multistage processes. It is shown that, as excitation energy increases, the parameter of the level density for these nuclei first decreases (this behavior is consistent with the predictions of the generalized model of a superfluid nucleus) and then increases (this points to the destruction of ...

Energy Technology Data Exchange (ETDEWEB)

The sharp, temperature induced, continuous valence transition in EuPd/sub 2/Si/sub 2/ is drastically changed by doping with Sn at the Si site up to 5 at.%. Only a first order valence transition occurs for a 3% Sn doped sample and the 2/sup +/ component which survives the valence transition orders magnetically at 4.2 K. No valence transition at all occurs for a 5% Sn doped sample right up to 1.9 K and magnetic ordering sets in around 30 K.

International Nuclear Information System (INIS)

A theoretical study of structural and electronic properties of GeC, SnC and GeSn is presented using the full potential linearized augmented plane wave method. In this approach, the generalized gradient approximation was used for the exchange-correlation potential. Results are given for lattice constant, bulk modulus and its pressure derivative in both zinc-blende and rocksalt structures. Band structure, density of states and band gap pressure coefficients in zinc-blende structure are also given. The results are compared with previous calculations and with experimental measurements.

Energy Technology Data Exchange (ETDEWEB)

The theory of reliability is used to develop statistical field data on malfunctions of units of sucker rod well pumps (UShSN). The indices of reliability of the UShSN are applied for establishment of the cause-effect links between the operating factors. Dependences of operating time on the depth of suspension of the pumps, mode of pumping out, degree of flooding of the oil, and twisting of the shafts are established for conditions of specific fields. The obtained relationships can be used in selecting and optimizing the work of the UShSN.

Energy Technology Data Exchange (ETDEWEB)

The Ti and Ti-Al coatings were deposited onto hot-worked AISI H11 steel substrates and plasma nitrided at 900 C. The Ti coated samples were successfully nitrided, while cracking and delamination of the Ti-Al coating was observed during nitriding. The formation of [delta]-TiN and [epsilon]-Ti[sub 2]N phases were detected after plasma nitriding of the Ti coating. During plasma treatment of the Ti-Al coating, the initial Ti[sub 3]Al and Al phases were paartially transformed into TiAl phase. The martensite transformation of the substrate material was found. The as-deposited Ti coating has a fibrous structure, while the structure of the as-sputtered Ti-Al coating is columnar. The superficial Vickers microhardness of plasma-nitrided ...

International Nuclear Information System (INIS)

This paper describes the performance of AlGaN/GaN HEMTs with 2.4 #mu#m source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 #mu#m source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

Science.gov (United States)

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

British Library Electronic Table of Contents (United Kingdom)

We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1-xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift.

International Nuclear Information System (INIS)

The thermoluminescence (TL) and emission of coloured RbCl and RbCl:Sn crystals are studied in the temperature range 300 to 560 K. The glow peaks responsible for F centres and tin centres in different valence states are identified using optical bleaching studies. The glow peaks are analysed using total curve fitting method and the kinetic parameters are determined. In moderately #gamma#-irradiated tin-doped RbCl crystals, the TL emission bands observed at 4.0, 3.6, and 2.2 eV are attributed to Sn"0, Sn"+, and Sn"- centers, respectively. A comprehensive energy level diagram depicting the various TL processes in these undoped and tin-doped RbCl crystals is proposed. (author).

Energy Technology Data Exchange (ETDEWEB)

Ion storage CeO{sub 2} and CeO{sub 2}/SnO{sub 2} coatings were prepared by sol-gel dip-coating method using aqueous-based process. The influence of added SnO{sub 2} in the CeO{sub 2} oxide coatings on the inserted/extracted charge was determined by chronocoulometric measurements. It was found that for 60 nm thick film the inserted/extracted charge was twice larger (Q = 10mC/cm{sup 2}) for films containing 17 mol % SnO{sub 2} if compared to pure CeO{sub 2}. The addition of SnO{sub 2} to the mixed oxides coatings on their optical properties and structural characteristics were studied.

CERN Document Server

Amperostatic coulometry was applied for the thickness measurement of Sn-Ag hot dip coatings, which comprise an extended Sn-Cu interdiffusion layer. Complementary measurements, notably weight loss, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, X-ray fluorescence (XRF), and dynamic secondary ion mass spectroscopy were performed in order to obtain a better interpretation of the coulometry results. Based on the experimental results presented in this article, the three potential changes observed during coulometry measurements are ascribed to (i) the entire dissolution of pure Sn, (ii) the formation of a CuCl salt layer, and (iii) the surface passivation. The measurement of the pure Sn mass is well reproducible despite strong coating thickness variations detected by XRF. Several experimental problems, in particular, a coating undercutting, hamper the determination of the ...

British Library Electronic Table of Contents (United Kingdom)

Intermetallic compound (IMC) growth at the interface between a Sn coating and a Cu substrate with or without a Ni underlayer and its related stress state was evaluated by real-time measurements using the flexure beam method. For the Sn coating without a Ni underlayer, pyramid-shaped IMC grains of Cu6Sn5 grew along the grain boundaries of Sn from the Cu substrate, especially at the triple grain boundary junctions and the IMC grains rapidly increased their volume during the initial 3?days, During this time, the IMC growth rate was 2.3??m3/day and the compressive stress in the Sn coating rapidly developed and became saturated at about ?11?MPa. In contrast, platelet IMC grains of Ni3Sn4 formed at the surface of the Ni underlayer and the IMCs grew at a rate of 1.0??m3/day for the Sn/Ni coating....

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)b2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed ...

Energy Technology Data Exchange (ETDEWEB)

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs ...

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The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

Energy Technology Data Exchange (ETDEWEB)

We discuss the initial development of a concentrator device based on the GaInP/GaAs monolithic tandem cell structure. The very high one-sun efficiency of this device, coupled with its characteristic low operating current, make this a promising candidate for use under high concentration. Test results for a prototype device are presented. This device achieves an efficiency of 29.5% at a concentration of 102 suns.

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.

Energy Technology Data Exchange (ETDEWEB)

Magneto-striction and magnetic form factors in 5f itinerant antiferromagnets UNiGa{sub 5} and UPtGa{sub 5} are studied by means of neutron scattering. Remarkable magneto-striction was observed around T{sub N}, indicating large spin-orbit coupling in the itinerant system. The orbital magnetic moment is found to be strongly suppressed due to the hybridization of uranium 5f with Ga-4p electron.

International Nuclear Information System (INIS)

In this study, the corrosion behavior of commercially pure titanium (c.p. Ti), Ti-6Al-4V and five new experimental Ti-Cr alloys was evaluated through open-circuit potential (OCP) and potentiodynamic polarization measurement in an artificial saliva containing fluoride. Electron spectroscopy for chemical analysis (ESCA) was used to characterize the composition of the passive films on the alloy after potentiodynamic polarization measurement. It was found that in standard artificial saliva the OCP increases with higher Cr content in Ti-Cr alloys. In 0.5% NaF artificial saliva, the OCP decreases with decreasing Cr in Ti-Cr alloys, and all but Ti-5Cr remain consistently higher than those of c.p Ti and Ti-6Al-4V. Linear polarization results show that artificial saliva and artificial saliva containing 0.5% NaF result in ...

British Library Electronic Table of Contents (United Kingdom)

To improve the photocatalytic application performances of TiO2, in this work, firstly CdS modified Degussa P25 TiO2 (CdS/TiO2) composites were prepared by two methods, sol-gel method and precipitation method. Next they, sol-gel-CdS/TiO2 (sg-CdS/TiO2) and precipitation-CdS/TiO2 (pp-CdS/TiO2), were loaded on activated carbon fibers (ACFs) by dip-coating method using the sodium carboxymethyl cellulose as adhesives. The composites were characterized by XRD, UV-vis absorbance spectra, SEM, EDS and BET. The photocatalytic activities under sunlight were investigated by the degradation of methylene blue. The results showed that CdS/TiO2 composites were mainly composed of anatase-TiO2 and little CdS cubic phases. The absorption wavelengths of sg-CdS/TiO2 and ...

Science.gov (United States)

Calcium stannate (CaSnO3) powders with the distorted perovskite structure have been synthesized by solid state and the sol-gel methods and their electrochemical performance was compared. The sol-gel CaSnO3 shows stable cycling performance with a reversible capacity of 430-440 mAh/g (0.005-1.0 V; 60 mA/g) up to 50 cycles. The role of preparatory conditions, morphology and cycling conditions (current density and potential window) on the anodic performance of the compounds are addressed.

Energy Technology Data Exchange (ETDEWEB)

The solubility of Sn(IV) oxide was determined in a dilute NaClO{sub 4} solution with pH 2 through 12 at ambient temperature. Both oversaturation and undersaturation experiments were carried out in an inert gas glovebox where the concentration of the oxygen and carbon dioxide were less than 1 ppm. The solubility of Sn(IV) oxide was 3 {times} 10{sup {minus}8} mol/l at neutral pH, and increased at pH > 7.5. Equilibrium constants of soluble reactions were calculated from the experimental data, using curve fitting method. The study suggests that the solubility of Sn(IV) oxide would be higher than that provisionally used in current safety assessments of HLW disposal sites.

International Nuclear Information System (INIS)

English 2005 p. 240 Russian Federation Fadeev, SN Gridnev, KA Institute

Science.gov (United States)

Space Network Ku-band service. ... Completed GLAST mission schedule and budget assessment .... Utilize Ku band SN link (TDRSS) for science data return ...

Science.gov (United States)

... Abstract : Single crystals of Pb(x)Sn(1-x)Te alloy have been grown with o = or thin film evaporator. ...

Energy Technology Data Exchange (ETDEWEB)

The crystal structure of R/sub 6/Cu/sub 8/Sn/sub 8/ compounds (R=Gd, Tb, Dy, Ho, Er, Tm) is determined and their magnetic susceptibility is measured in the temperature range 78-293 K. The structure of the compounds is isotypical with the Gd/sub 6/Cu/sub 8/Ge/sub 8/ type (space group Immm, Z=1). The magnetic susceptibility of the R/sub 6/Cu/sub 8/Sn/sub 8/ compounds is described by the Curie-Weiss law. Effective magnetic moments of R/sub 6/Cu/sub 8/Sn/sub 8/ compounds (R=Gd, Tb, Dy, Ho, Er, Tm) are in good agreement with theoretical values for free R/sup 3 +/ ions.

Science.gov (United States)

... Accession Number : ADD109273. Title : THERMAL STABILITY OF ALPHA-BETA TITANIUM ALLOY Ti-5Al-2Cr-1Fe,. Corporate Author : ...

Science.gov (United States)

... transformed at 705°C. The cooling rate and temperature dependence of matrix decomposition for Ti6242 was thus similar to that for Ti64 x [9]. ...

International Nuclear Information System (INIS)

Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI_3 or BBr_3 discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates (>6000 Angstrom min"-"1) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI_3 or BBr_3 content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO_2 and SiN_x of #>=#8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and AlInP. copyright 1998 American Vacuum Society.

Energy Technology Data Exchange (ETDEWEB)

Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a ...

Energy Technology Data Exchange (ETDEWEB)

The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

Energy Technology Data Exchange (ETDEWEB)

This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

International Nuclear Information System (INIS)

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

International Nuclear Information System (INIS)

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

International Nuclear Information System (INIS)

It is shown that the extended softening in k space of the [111] transverse acoustic phonon in Nb_3Sn seen recently by neutron measurements is in agreement with the predictions of a phenomenological Landau description of the structural phase transition in the A-15 compounds. This indicates the feasibility of a calculation of the partial phonon density of states of modes directly coupled to the order parameter driving the structural transition, as a function of temperature.

UK PubMed Central (United Kingdom)

We have isolated and sequenced cDNA clones encoding the human U1-70K snRNP protein, and have mapped this locus (U1AP1) to human chromosome 19. The gene produces two size classes of RNA, a major 1.7-kb...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The oxide colloidal route, developed in the laboratory for mono-metallic catalysts, consists in preparing a metallic oxide hydro-sol which leads to the supported catalyst after deposition onto a support and an activation stage. In this work, this method has been adapted to the preparation of alumina supported bimetallic Pd-Sn catalysts to determine its interest for the control of the properties of the bimetallic phase (size, composition and structure). In the preliminary study concerning tin oxide sols, SnO{sub 2} (size=2,3 nm) and Sn{sub 6}O{sub 4}(OH){sub 4} (size = 25 nm) nano-particles were synthesized by neutralization respectively for tin(IV) and tin(H). The control through the pH of the aggregation of the PdO and SnO{sub 2} particles revealed that increasing oxide solubility promotes integral re-dispersion of the oxide particles. To synthesize oxide bimetallic sols, three strategies were defined. ...

Energy Technology Data Exchange (ETDEWEB)

In this work, {beta}-SnS{sub 2} thin films have been prepared on glass substrates by the spray pyrolysis technique using an alcohol solution which contains tin chloride (SnCl{sub 4}) and thiourea (SC(NH{sub 2}){sub 2}) as precursors. The structural study shows that {beta}-SnS{sub 2} thin film prepared using optimal experimental conditions: substrate temperature T{sub s} = 280 deg. C and the concentration ratio of sulfur and tin elements in the spray solution x = [S]/[Sn] = 2.5, crystallizes in the hexagonal phase with a strong (0 0 1) X-ray diffraction line. In the same way, microprobe analyses (EPMA) as well as X-ray photoelectron spectroscopy (XPS) show the presence of undiserable phase of SnO{sub 2}. From the transmission and reflectance spectra, the band gap energy is 2.65 eV. On the other hand, the photothermal properties of such films have been studied, the thermal ...

Energy Technology Data Exchange (ETDEWEB)

The fragment separator at GSI, Darmstadt, has been used to produce and separate very proton rich nuclei in the {sup 100}Sn region. By fragmentation of a {sup 112}Sn beam at 1 A{center_dot}GeV we produced nuclei along the rp-process path between {sup 77}Y and {sup 98}In. By implanting these ions into a silicon detector stack we were able to determine their halflives. Preliminary data are presented.

UK PubMed Central (United Kingdom)

To understand how DEXD/H-box proteins recognize and interact with their cellular substrates, we have been studying Prp28p, a DEXD/H-box splicing factor required for switching the U1 snRNP with the U6...Full Text Available

Science.gov (United States)

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KoreaScience (Korea)

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KoreaScience (Korea)

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Energy Technology Data Exchange (ETDEWEB)

Ti honeycombs with the side of 800 and 400 nm were fabricated by focused ion beam (FIB), though the surfaces of the bottom and wall of the Ti honeycombs were rough, as compared with the surfaces of the bottom and wall of the Si honeycomb. It is demonstrated that the nanoscale Ti components can be fabricated in a short time by FIB.

CERN Document Server

The recently measured experimental data of Argonne National Laboratory for high-spin states in neutron-rich $^{71,73,75,77}$Ga isotopes have been interpreted in the framework of large-scale shell model. Calculations have been performed in $f_{5/2}pg_{9/2}$ model space with two recent effective shell model interactions, JUN45 and jj44b. We also predict high-spin states for $^{79,81}$Ga, where very little is known experimentally. The calculated results show that existence of band structure built on top of the 3/2$^-$, 5/2$^-$ and 9/2$^+$ levels in $^{71-77}$Ga. The collective structure reflected in experimental data is not well reproduced in calculated values. The calculated positive parity states in $^{71,73,75}$Ga are higher in energy in comparison to experimental finding, while for $^{77,79}$Ga, the positive parity states are in better agreement. Both the interactions predict, ...

UK PubMed Central (United Kingdom)

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

International Nuclear Information System (INIS)

We have investigated the possibility to use a microwire of BiSn to design an anisotropic thermoelectric generator. The glass-coated microwire of pure and Sn-doped bismuth was obtained by the Ulitovsky method; it was a cylindrical single-crystal with orientation (1011) along the wire axis; the C3 axis was inclined at an angle of 70 degrees to the microwire axis. It is found that doping of bismuth wires with tin increases the thermopower anisotropy in comparison with Bi by a factor of 2 - 3 in the temperature range of 200-300 K. For a Bi microwire with a core diameter of 10 ?m with a glass coating with outer diameter of 35 ?m, the transverse thermopower is ? 150 ?V/(K*cm); for BiSn, 300 ?V/(K*cm). The design of an anisotropic thermogenerator based on BiSn microwire is proposed. The miniature thermogenerator will be efficient for power supply of devices with low useful current. In addition to the ...

Science.gov (United States)

Certain materials, especially Sn, passivate the rare earth-exchanged Y zeolite (REY) used in petrochemical fluid-cracking catalysts against vanadium degradation caused by V impurities in the feed oil. The mechanism of passivation was investigated here from the standpoint of high-temperature oxide acid-base reaction; i.e., where the controlling factors were considered to be Lewis acid-base reactions between V{sub 2}O{sub 5}, the RE oxides, SnO{sub 2}, etc. Molten salt tests at 680{degree}C showed SnO{sub 2}, presumably because of its acidic nature, to be essentially nonreactive with V{sub 2}O{sub 5} or Na{sub 2}O-V{sub 2}O{sub 5} compounds. A hypothesis was developed to explain how the passivation effect by Sn might result from the unique resistivity of SnO{sub 2} to reaction with V{sub 2}O{sub 5}.

CERN Document Server

We present a theoretical framework for formal study of systematic effects in Supernovae Type Ia (SN Ia) that utilizes 2-d simulations to implement a form of the deflagration-detonation transition (DDT) explosion scenario. The framework is developed from a randomized initial condition that leads to a sample of simulated SN Ia whose Ni56 masses have a similar average and range to those observed, and have many other modestly realistic features such as the velocity extent of intermediate mass elements. The intended purpose is to enable statistically well-defined studies of both physical and theoretical parameters of the SN Ia explosion simulation. We present here a thorough description of the outcome of the SN Ia explosions produced by our current simulations. A first application of this framework is utilized to study the dependence of the SN Ia on the Ne22 content, which is known to be ...

Energy Technology Data Exchange (ETDEWEB)

The authors report a two-temperature RF bias stress test on nominal 1.2 W 7.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTF`s of 2020 and 1340 hours were obtained at Tj = 218{degrees}C and 245{degrees}C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.

International Nuclear Information System (INIS)

... dpg-tagungen.de Dresden (Germany) 27-31 Mar 2006 0420-0195 VDPEAZ

Energy Technology Data Exchange (ETDEWEB)

This paper discusses design considerations for the recently introduced GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140--180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. The authors focus on the issues of grid design, top-cell thickness, and antireflectance coat. They also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.

International Nuclear Information System (INIS)

Russian 1997 p. 266-267 Russian Federation Ushakova, GA

International Nuclear Information System (INIS)

... angiotensin gallium 67 lungs lysozyme patients sarcomas beta decay

International Nuclear Information System (INIS)

The fluorescence, absorption, infrared and Raman spectra of Sm_3Ga_5O_1_2 have been investigated. The energy-level schemes in the energy range 3000-16000 cm"-"1 have been determined. The number and symmetries of the Sm_3Ga_5O_1_2 crystal normal mode have been obtained by the molecular site group analysis and their comparison with the experiment has been made.

International Nuclear Information System (INIS)

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In_xAl_yGa_1_-_x_-_yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 #mu#m In_xAl_yGa_1_-_x_-_yN alloy grown on 0.5-1.0 #mu#m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In_xAl_yGa_1_-_x_-_yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In_xAl_yGa_1_-_x_-_yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have ...

International Nuclear Information System (INIS)

Description of problem or function: Format: EXREM III; Nuclides: radioactive decay data on 252 Nuclides: 1H-3, 4Be-7, 6C-11, 6C-14, 7N-13, 8O-15, 9F-18, 11Na-22, 11Na-24, 12Mg-28, 13Al-28, 15P-32, 15P-33, 16S-35, 17Cl-36, 17Cl-38, 18A-37, 18A-39, 19K-40, 19K-42, 19K-43, 20Ca-45, 20Ca-47, 20Ca-49, 21Sc-46, 21Sc-47, 21Sc-49, 24Cr-51, 25Mn-52M, 25Mn-52, 25Mn-54, 26Fe-52, 26Fe-55, 26Fe-59, 27Co-56, 27Co-57, 27Co-58, 27Co-60, 28Ni-56, 28Ni-63, 29Cu-64, 30Zn-65, 30Zn-69M, 30Zn-69, 31Ga-67, 31Ga-68, 32Ge-77, 33As-76, 33As-77, 34Se-75, 35Br-80M, 35Br-80, 35Br-82, 35Br-83, 35Br-84, 36Kr-79, 36Kr-83M, 36Kr-85M, 36Kr-85, 36Kr-87, 36Kr-88, 37Rb-84, 37Rb-86, 37Rb-87, 37Rb-88, 37Rb-89, 37Rb-90M, 37Rb-90, 38Sr-85, 38Sr-87M, 38Sr-89, 38Sr-90, 38Sr-91, 38Sr-92, 38Sr-93, 39Y-87, 39Y-88, 39Y-90, 39Y-91M, 39Y-91, 39Y-92, 39Y-93, 40Zr-93, 41Nb-93M, 40Zr-95, 40Zr-97, 41Nb-95M, 41Nb-95, 41Nb-97M, 41Nb-97, 42Mo-99, 43Tc-99M, 43Tc-99, 44Ru-103, 44Ru-105, 44Ru-106, ...

Energy Technology Data Exchange (ETDEWEB)

A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

Energy Technology Data Exchange (ETDEWEB)

There is presently considerable interest in wear resistant coatings produced using closed field unbalanced magnetron sputtering technology. For example, layered films of diamond-like carbon (DLC) with tungsten or titanium additions have been widely reported. The benefit is that the mechanical properties are enhanced (e.g. giving greater toughness); also it is possible to control the stress state and enhance adhesion. Here we report the further development of this concept by the addition of TiN, TiCN and TiC layers in DLC-based composites, utilizing an additional source of electrons in the vicinity of substrate to enhance ionisation of the plasma and increase coating density. Composite coatings of ceramics TiN, TiC{sub x}N{sub y}, TiC, CrN, TiCrN, TiCrCN, TiCrC, metal doped Ti{sub ...

Energy Technology Data Exchange (ETDEWEB)

The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The ...

Energy Technology Data Exchange (ETDEWEB)

This research project aimed to determine the factors for the transfer of the elements silver (Ag), cerium (Ce), cobalt (Co), chrome (Cr), gallium (Ga), lanthanum (La), molybdenum (Mo), niobium (Nb), radium (Ra), ruthenium (Ru), antimony (sb), thorium (Th), titanium (Ti) and uranium (U) from food into the mother's milk. This factors will be used as a basic to check and derive activity values for the contamination of food and for radiation protection at working places of suckling women. For this purpose 19 mothers collected samples daily (2-8 weeks), using the duplicate method, of all the food they consumed as well as of their milk. After microwave-assisted digestion the element contents were analysed by mass-spectroscopy with inductive coupled plasma (ICP-MS). The results of the mothers who participate for more than 5 weeks were used to make a time lapse between the intake and transfer of the elements in the mothers milk visible. ...

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate ...

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(Al{sub y}Ga{sub 1{minus}y}){sup 1{minus}x}In{sub x}P semiconductor alloys lattice-matched to GaAs are widely used in visible optoelectronic devices. One of the most recent developments in this area is the AlGaInP-based red vertical cavity surface emitting laser (VCSEL). These lasers, which employ AlGaInP active regions and AlGaAs distributed Bragg reflectors (DBRs), have demonstrated continuous-wave (CW) lasing over the 630--690 nm region of the spectrum. Applications for these lasers include plastic fiber data communications, laser printing and bar code scanning. In this paper, the authors present an overview of recent developments in the processing and performance of AlGaInP based VCSELs. This overview will include a review of the general heterostructure designs that have been employed, as well as the performance of lasers fabricated by both ion implantation ...

British Library Electronic Table of Contents (United Kingdom)

This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl45H2O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, `in- situ doping' resulted i...

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In a work studying the corrosion and tarnishing properties of a variety of copper alloys, the alloy Cu-A110-Sn5 was found to show an excellent corrosion resistance in neutral solutions, where copper and most conventional Cu alloys are covered by thick nonprotective surface layers. The passive films formed on this alloy were characterized with electrochemical and photoelectrochemical methods. The pH dependence of the passivation and of the photocurrent behavior of the Cu-A110-Sn5 alloy clearly indicates that the passivity of this alloy in neutral solutions is due to a formation of passive film enriched with aluminum oxide. At corrosion potential a strong increase in the corrosion resistance with time is due to a gradual enrichment of the surface with aluminum oxide. This can be seen in the photocurrent spectra which change from cooper-type to aluminum-type with time. At higher applied potentials the formation of an aluminum-type oxide film is ...

British Library Electronic Table of Contents (United Kingdom)

Porous SnO2 nanotubes were prepared via electrospinning followed by calcination in air. As anode materials for lithium ion batteries, the porous nanotubes delivered a high discharge capacity of 807mAhg^-^1 after 50cycles. Even after cycled at high rates, the electrode still retained a high fraction of its theoretical capacity. Such excellent performances of porous SnO2 nanotubes could be attributed to the porous and hollow structure which facilitated liquid electrolyte diffusion into the bulk materials and buffered large volume changes during lithium ions insertion/extraction. Furthermore, the nanoparticles of nanotubes provided the shorter diffusion length for lithium ions insertion which benefited in retaining the structural stability and good rate performance. Our results demonstrated t...

British Library Electronic Table of Contents (United Kingdom)

In this project, nanocrystalline SnO2 powders were successfully prepared by (a) citrate sol-gel and (b) direct precipitation methods. Powders were characterized using thermal analysis techniques (DTA-TG-DSC), X-ray powder Diffraction (XRD), surface area (BET) and electrical conductivity measurements. XRD patterns showed the presence of the cassiterite structure. SnO2 particles, prepared through sol-gel method exhibit crystallite sizes in the range from 3.1 to 22.3 nm when the gel is heat treated at different temperatures up to 900?C. SnO2 nanocrystallites prepared by the precipitation method are comparatively larger in size. The higher specific surface area was obtained for the powder prepared using sol-gel method and the obtained average grain size (d) is relatively large compared with th...

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Formulas are obtained for calculation of the energies and B(Elambda) values of T/sub greater-than/ giant resonances in the quasiparticle-phonon model of the nucleus. Characteristics of giant dipole resonances are calculated in several spherical nuclei and the correct location is obtained for T/sub less-than/ and T/sub greater-than/ collective 1/sup -/ states. The calculated ratios sigma/sub -/1(T/sub greater-than/)/sigma/sub -/1(T/sub less-than/) agree with the experimental data for /sup 88/Sr, /sup 90/Zr, and /sup 92/Mo and are 3 times larger than the experimental values for /sup 116,120,124/Sn. The decrease of the cross sections sigma/sub -/1(T/sub greater-than/) in /sup 124/Sn in comparison with /sup 116/Sn is correctly reproduced.

International Nuclear Information System (INIS)

The compounds CePdSi_2, CeIrSi_2 and CeRhSn_2 have been synthesized and studied by X-ray diffraction, electrical resistivity and magnetic susceptibility. The magnetic susceptibility of CePdSi_2 exhibits two peaks at 6.8 K and 2.5 K, respectively, indicating two antiferromagnetic phase transitions, while that of CeIrSi_2 shows a broad maximum at 150 K, characteristic of valence fluctuating Ce-compounds. CeRhSn_2 remains paramagnetic down to 5 K. The resistivity of CeIrSi_2 exhibits a T"2 dependence at low temperatures, indicating a Fermi-liquid ground state, while those of CePdSi_2 and CeRhSn_2 shows the presence of Kondo and crystal field effects. (orig.).

International Nuclear Information System (INIS)

Twelve powders of TiO_2-Y_2O_3-ZrO_2 solid solution of the methodically changed composition were prepared by a coprecipitation-calcination technique. After mixing with phenol-formaldehyde resin, the powders were calcinated for 2 hours at 1200"oC in vacuum. The resultant composite powders contained TiC and non-reacted carbon. Green compacts were sintered in vacuum at 1500"oC for 2 hours. A temperature increase was stopped at 1200"oC to react remains of carbon. There were two carbides in the composites TiC and ZrC. TiC non-stoichiometry depended on carbon content in the system. Phase composition of the depended on of titania and yttria in zirconia solid solution. The majority of the samples showed two tetragonal zirconia phases differing in lattice parameter and tetragonality. (author)

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Minor addition of B to the Ti-6Al-4V alloy reduces the prior #beta# grain size by more than an order of magnitude. TiB formed in-situ in the process has been noted to decorate the grain boundaries. This microstructural modification influences the mechanical behavior of the Ti-6Al-4V alloy significantly. In this paper, an overview of our current research on tensile properties, fracture toughness as well as notched and un-notched fatigue properties of Ti-6Al-4V-xB with x varying between 0.0 to 0.55 wt.% is presented. A quantitative relationship between the microstructural length scales and the various mechanical properties have been developed. Moreover, the effect of the presence of hard and brittle TiB has also been studied.

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Composite nitrides (such as BN, TiN) are widely used in various industrial applications because of their extreme wear and corrosion resistance, thermal and electrical properties. in order to obtain composite materials with these optimal properties, it is important to elucidate whether any chemical reactions occur at nitride/metal interfaces, e.g., those involving BN-Ti/TiN. Materials of interest include the deposition by PVD of Ti and TiN on BN substrates. Some of these systems were then subjected to varying degrees of physical and thermal alteration. Detailed X-ray photoelectron spectroscopy (XPS) has therefore been rendered of these interfaces using cross-sectional display and sputter etching. Resulting structural and morphological features have been investigated with transmission electron microscopy (TEM) and X-ray diffraction (XRD). Diffusion of the nitridation, oxynitride formation and interfacial ...

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AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a ...

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Ultrafine particles of Sn-Sb alloys with different chemical composition have been prepared by hydrogen plasma-metal reaction. Structure, morphology, size and chemical composition of the Sn-Sb ultrafine particles were investigated by transmission electron microscopy, X-ray diffraction, BET gas adsorption, and induction-coupled plasma spectroscopy. It was found that all the particles have spherical shapes, with average particle size in the range of 100-300 nm. The electrochemistry properties as an alternative anode material for lithium-ion batteries have been characterized by constant current cycling and cyclic voltammetry. Electrochemical measurements showed that the alloys with Sn-46.5 at.% Sb have best reversible capacity and capacity retention. It exhibited a high reversible lithium-ion storage capacity of 701 mAh g"-"1 in the initial cycle, which has remained at 81% (i.e., 566 mAh g"-"1) of its original capacity after 20 ...

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The applicability of isothermal solidification as a contacting method for solar cells was proved for the systems AgSn and AuIn. The process is advantageous in that it requires no fluxes, no inert gases, and no pretreatment of the components. The IE contac...

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We have created quasiprojectiles of varying isospin via peripheral reactions of {sup 28}Si+{sup 112}Sn and {sup 124}Sn at 30 and 50 MeV/nucleon. The quasiprojectiles have been reconstructed from completely isotopically identified fragments. The difference in N/Z of the reconstructed quasiprojectiles allows the investigation of the disassembly as a function of the isospin of the fragmenting system. The isobaric yield ratio {sup 3}H/{sup 3}He depends strongly on N/Z ratio of quasiprojectiles. The dependences of mean fragment multiplicity and mean N/Z ratio of the fragments on N/Z ratio of the quasiprojectile are different for light charged particles and intermediate mass fragments. Observation of a different N/Z ratio of light charged particles and intermediate mass fragments is consistent with an inhomogeneous distribution of isospin in the fragmenting system.

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SN 1987A: Soft X-Ray Intensity Ratio. 2002-12 to 2000-12. 2005-7 to 2002-12. Contours: 2002-12. (0.5 2 keV). (0.5 2 keV). Contours: 2005-7 ...

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The Ti-6Al-4V alloy was treated by inductively coupled rf plasma nitriding. The effects of plasma-processing time in the range of 5-35 min on the microstructure and the mechanical properties of the plasma-nitrided Ti-6Al-4V samples were studied. The plasma power input was adjusted at 450 W and pure N{sub 2} gas was introduced to establish a treatment pressure of 8.0-8.4 x 10{sup -2} mbar. The characteristics of the nitrided layers have been investigated by microhardness testing, surface roughness measurements, optical microscopy, and x-ray diffraction. The results show that the surface microhardness increases as the plasma-processing time increases to reach 2000 HV0.1 at a plasma-processing time of 35 min. A high nitriding rate of 2.81 {mu}m{sup 2} s{sup -1} at a plasma-processing time of 25 min was achieved. The formation of the hard phases TiN, Ti{sub 2}N, and Ti(N) in the ...

Science.gov (United States)

... in Ti-6Al-4V has been studied quite thoroughly [5-7], much of the work resulting from the Air Force-sponsored High Cycle Fatigue initiative [8]. In ...

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tact materials ate Ti-Pd-Ag and the back surface reflector is formed from evaporated .... Ti-Pd-Ag, Dielectric Wraparound. BSR. Evaporated Aluminum ...

International Nuclear Information System (INIS)

The irradiation behavior of Li_2TiO_3 under a fusion reactor environment was simulated by simultaneous irradiation of Li_2TiO_3 by the triple ion beams and the respective single ion beams of O"2"+, He"+ and H"+. The microstructural changes in Li_2TiO_3 caused by the irradiation were measured by FT-IR photoacoustic spectroscopy. The results suggest that the amount of TiO_2 formed is proportional to the dpa and that the method of irradiation does not affect the dependence of formation of TiO_2. On the other hand, the amount of defects and/or radiolytic products generated by irradiation, which is considered to trap hydrogen near the surface, is found to be affected by the method of irradiation. Such phenomena are believed to affect the tritium release behavior from Li_2TiO_3, and durability of Li_2TiO_3 and compatibility of ...

International Nuclear Information System (INIS)

Ceramic matrix composites in the TiC-Ti, Y-TZP system can be synthesized by the reaction between carbon and the TiO_2-Y_2O_3-ZrO_2 solid solution nanopowder. This method results in the more homogeneous powders than those prepared by the physical mixing of TiC and zirconia s.s. powders. Twelve TiO_2-Y_2O_3-ZrO_2 solid solution nanopowders differing in the proportions of the constituent oxides were prepared by the coprecipitation- calcination route. They were reacted with the pyrolytic carbon evenly distributed within the system. Carbon was introduced by the thermal decomposition of the phenol-formaldehyde resin dissolved in ethyl alcohol and mixed with the zirconia s.s. nanopowder. Reaction was performed in vacuum. Compacts of the composite powders sintered in vacuum give dense materials of evenly distributed TiC inclusions of sizes not surpassing 400 nm. Hardness of such materials ...

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The electronic structure of the clusters (V/sub 3/Si/sub 4/)/sup 12 -/, (Nb/sub 3/Sn/sub 4/)/sup 12 -/(Mo/sub 3/Ge/sub 4/)/sup 15 -/ in crystalline V/sub 3/Si, Nb/sub 3/Sn, Mo/sub 3/Ge compounds is calculated by the Extended Hueckel method. The influence of different types of radiation induced defects on the density of states at the Fermi level (the anti-site defects, the displacement of atoms in linear chains, the vacancy-interstitial type defects) is considered.

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Laser surface alloying with gaseous nitrogen was utilized to improve the wear resistance of a Ti-6Al-4V alloy. Wear-resistant composite coatings reinforced by hard TiN dendrites were produced 'in-situ' on a substrate of a Ti-6Al-4V alloy. The hardness and wear resistance of the laser alloyed coating under two-body abrasive and block-on-ring full-sliding wear conditions were significantly enhanced. (orig.)

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PMID:21671451

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Incorporation of TiO{sub 2}, into perfluoroionomer membrane by treatment with TiC1{sub 4}-methanol has been described. Platinum was used as an electrocatalyst. In order to make the system electronically as well as ionically conducting, the electrode was modified with polypyrrole (PPy). Photopolymerisation of pyrrole was accomplished by immersing TiO{sub 2}-Pt-NaF in pyrrole solution. UV-visible and FT-IR Spectroscopic studies were preformed with regards to the formation of the TiO{sub 2}, Pt and PPy within Nafion matrix. We report the construction and evaluation of this integrated system and establish the feasibility of hydrogen generation thereof. (Author)

Science.gov (United States)

Evaluation of ageable beta alloys Ti-17V-2Fe-2Co-3Al, Ti-17V-7.5Co-3A1 and Ti-8Mo-8V-5Co-3Al continued with room and elevated temperature smooth and notched tensile tests, creep stability, oxidation and stress-corrosion tests. Ti-17V-7.5Co-3Al aged more r...

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PVD-coatings based on TiB{sub 2} are expected to show high wear resistance and low tendency of adhesion on metal forming tools. Coating adhesion and morphology can be modified over a wide range by varying the content of nitrogen (N{sub 2}) and the deposition parameters power and bias voltage. All coatings were deposited using commercial unbalanced magnetron equipment, the deposition was homogeneous in a volume of 400 x 400 x 400 mm{sup 3}. Hipped and hot pressed TiB{sub 2}-targets were used, nitrogen (N{sub 2}) was added as gas, Ti and Al by a solid Ti-Al-target. The tribological behaviour was tested by a pin-on-disc wear test. The coatings investigated were TiB{sub 2}, TiAlB(N), TiAl(N) and TiB{sub 2}/TiAl(N). As counterpart in the pin-on-disc wear test, 6 mm diameter spheres of steel (100Cr6), ...

Science.gov (United States)

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and ...

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Ga{sub 0.6}In{sub 0.4}P/(Al{sub 0.8}Ga{sub 0.2}){sub 0.4}In{sub 0.6}P strain-compensated multiple quantum wells (SCMQW) and Ga{sub 0.5}In{sub 0.5}P/(Al{sub 0.4}Ga{sub 0.6}){sub 0.5}In{sub 0.5}P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

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Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

International Nuclear Information System (INIS)

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical ...

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The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

International Nuclear Information System (INIS)

Two plasma chemistries, i.e., CH_4/H_2/Ar and Cl_2/Ar, were compared for the etching of InGaP, AlInP, and AlGaP under inductively coupled plasma (ICP) conditions. While the etching with CH_4/H_2/Ar discharges appears to be ion driven, Cl_2/Ar discharges showed an additional strong chemical enhancement. The highest etch rate (#approx#1 #mu#m/min) for InGaP was achieved at high ICP source power (#>=#750 W) with the Cl_2/Ar chemistry. Cl_2/Ar discharges provided very smooth surfaces in all three materials with root-mean-square roughness measured by atomic force microscopy around 2 nm. This result may be due to the efficient ion-assisted product desorption in this chemistry. The etched near-surface region of InGaP (#approx#100 Angstrom) with Cl_2/Ar maintained almost the same stoichiometry as that of the unetched control. By contrast, the CH_4/H_2/Ar plasma chemistry produced somewhat rougher surfaces ...

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

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The fluorescence, absorption, infrared and Raman spectra of Sm/sub 3/Ga/sub 5/O/sub 12/ have been investigated. The energy-level schemes in the energy range 3000-16000 cm/sup -1/ have been determined. The number and symmetries of the Sm/sub 3/Ga/sub 5/O/sub 12/ crystal normal mode have been obtained by the molecular site group analysis and their comparison with the experiment has been made.

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X-ray photoemission spectroscopy has been used to measure the valence band offset {Delta}E{sub v} for the AlP/GaP (001) heterojunction interface. The heterojunction samples were prepared by molecular-beam epitaxy. A value of {triangle}E{sub v}=0.43 eV is obtained (staggered band alignment, with AlP valence band below that of GaP). 24 refs., 8 figs., 1 tab.

International Nuclear Information System (INIS)

Kinetics of decomposition of gallium and alkali metal intermetallic compounds in the systems LiGa-LiOH, LiGa-NaOH and LiGa-KON was studied in the temperature range of 40-80 deg C. It was ascertained that increase in temperature gives rise to increase in decomposition rate, whereas increase in hydroxide concentration involves the reaction deceleration. An assumption was made that the decomposition occurs with superimposing of two mechanisms, i.e. chemical and electrochemical decomposition. Basic kinetic characteristics of the process were determined - decomposition rate constant and current density

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This paper proposes the design of LQ-PSS (linear quadratic power system stabilizer) for improving power system stability using genetic algorithm(GA). We are turned weighting matrices of LQ-PSS using GA. To evaluate the usefulness of the proposed method, we performed the nonlinear simulation on a single machine infinite system. As results on a single machine infinite system. As results of the simulation, the proposed method shows the better control performance than CPSS(conventional power system stabilizer) in terms of settling time and damping effects. (author). 7 refs., 7 figs., 3 tabs.

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This article examines problems relating to the calculation of the position of regions of limited solubility of components in the liquid state for four-component systems. An approach based on the use of criterion of stability with respect to diffusion for obtaining equations which describe the region of stratification of the liquid phase in a four-component system is used. The authors used a ES-1020 computer to analyze the critical phenomena in Al-In-P-Sb, Al-Ga-In-P, Al-Ga-In-As, and In-Ga-As-P systems. The position of the spinode in the phase diagram of a four-component system is obtained.

International Nuclear Information System (INIS)

Al, Ga and In complexing with methylthymol blue (H_6R) purified by gel filtration is studied. in the case of metal excess complexes with the ratio of components M:H_6R=2:1 with #lambda#=587(Al), 590(Ga) and 593 nm(In) appear. In the case of reacting agent excess complexes with the ratio of component 1:1 with #lambda#_m_a_x=480-490 (Al) and 480 nm(Ga, In) appear. The mechanism of complexing reactions is studied. Molar extinction coefficients and stability constants are calculated.

International Nuclear Information System (INIS)

The oxygen vacancies distribution in the rigid lattice and the thermally activated motion of oxygen atoms are studied in La1-xSrxGa1-xMgxO3-x (x=0.00; 0.05; 0.10; 0.15 and 0.20) compounds. For that 71Ga, 25Mg and 17O NMR was performed from 100 K up to 670 K, and ion conductivity measurements were carried out up to 1273 K. The comparison of the electric field gradients at the Ga- and Mg-sites evidences that oxygen vacancies appear exclusively near gallium cations as a species trapped below room temperature in local clusters, GaO5/2-#square#-GaO5/2. These clusters decay at higher temperature into mobile constituents of the structural octahedra Ga(O5/6#square#1/6)6/2. At the same time, the nearest octahedral oxygen environment of magnesium cations persists at different doping levels. The case of two adjacent vacant anion sites is found highly unlikely within the ...

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In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

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Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

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Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

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We report the lasing characteristics of gain-guided AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes. At room temperature, continuous-wave operation is achieved over the wavelength range of 657--685 nm with the minimum threshold current at 670 nm. Devices with a 10-[mu]m diameter have threshold currents as low as 1.25 mA at room temperature (297 K) and 0.8 mA at 250 K. In addition, a single predetermined linear polarization state is found, independent of the lasing mode order and operating temperature.

Science.gov (United States)

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of ...

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(1976). USSR Lupin, VM Ramazanov, PE Tomskij Gosudarstvennyj Univ.

International Nuclear Information System (INIS)

The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)

Energy Technology Data Exchange (ETDEWEB)

A gain-guiding tapered stripe laser was fabricated using a Ga/sub 0.5/In/sub 0.5/P/(Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 /sup 0/C, an aspect ratio of about 2, and an astigmatism near 25 ..mu..m. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 /sup 0/C with a constant output power of 3 mW.

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TiH{sub 2} and TiD{sub 2} thick targets were bombarded with 100 to 200 keV protons. Evidence for nuclear reactions was obtained by means of a surface barrier particle detector. Proton irradiation of TiD{sub 2} produced the following observations: {alpha} particle emission identified as (p, {alpha}) reactions from {sup 11}B and {sup 7}Li impurities in the target at ppm concentrations; and {approx}3 MeV proton and {approx}1 MeV triton emission from secondary D-D reactions caused by elastic scattering of the primary proton with a target deuteron. A 3.9 MeV {alpha} particle peak measured by others was not observed. (author)

International Nuclear Information System (INIS)

Eu3+ ions are anchored on TiO2 matrix by coupling with 2,2'-bipyridyl 4,4'-dicarboxylic acid. Five different luminescence centers are observed for TiO2|2,2'-bipyridyl 4,4'-dicarboxylic acid|Eu3+ electrodes due to electron transitions between d and f orbitals. Photo-luminescence of TiO2|2,2'-bipyridyl 4,4'-dicarboxylic acid|Eu3+ electrodes is increased by attaching 2-thenoyltrifluoroacetone to Eu3+ ions. Immersion of TiO2|2,2'-bipyridyl 4,4'-dicarboxylic acid|Eu3+|2-thenoyltrifluoroacetone electrodes in propylsulfide is found to be further increased intensities of luminescence bands by a factor of three.

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{gamma}-ray excitation functions have been measured for the interaction of fast neutrons with {sup 48}Ti (neutron energy from 1 MeV to 250 MeV). The Los Alamos National Laboratory spallation neutron source, at the LANSCE/WNR facility, provided a ''white'' neutron beam which is produced by bombarding a natural W target with a pulsed proton beam. The prompt-reaction {gamma} rays were measured with the large-scale Compton-suppressed Ge spectrometer, GEANIE. Neutron energies were determined by the time-of-flight technique. Excitation functions were converted to partial {gamma}-ray cross sections, taking into account the dead-time correction, the target thickness, the detector efficiency, and neutron flux (monitored with an in-line fission chamber). The data analysis is presented here for neutron energies between 1 to 20 MeV. Partial {gamma}-ray cross sections for transitions in {sup 47,48}Ti, {sup 48}Sc, and {sup ...

Science.gov (United States)

Mesporous anatase-phase TiO(2) hollow spheres with high photocatalytic activity were prepared by hydrothermal treatment and self-transformation of amorphous TiO(2) solid spheres in an NH(4)F aqueous solution. The prepared samples were characterized by X-ray diffraction, scanning and transmission electron microscopy, X-ray photoelectron spectroscopy, N(2) adsorption-desorption isotherms and UV-vis absorption spectroscopy. The photocatalytic activity was evaluated by photocatalytic oxidation decomposition of acetone in air under UV irradiation. It is found that F(-) plays an essential role in the formation of TiO(2) hollow spheres. F(-) not only induces the hollowing of TiO(2) solid spheres, but also promotes the crystallization of anatase TiO(2) nanocrystals. A possible formation mechanism for the TiO(2) hollow spheres by localized Ostwald ripening or chemically ...

Energy Technology Data Exchange (ETDEWEB)

The Co-doped BaTiO{sub 3} nanosized powders and ceramics were prepared via the sol-gel process. The powders and ceramics were characterized by methods of XRD, SEM and TEM. The dielectric properties of the ceramics were also determined by these methods. The influence of sintering temperature, sintering time and Co concentration on the microstructure and dielectric properties was discussed. The results revealed that the powders were in nanometer scale (30-50 nm) and were mainly composed of cubic BaTiO{sub 3} phase and small amount of BaCO{sub 3}. After sintering, both the cubic BaTiO{sub 3} and BaCO{sub 3} were transformed into tetrahedron BaTiO{sub 3}. The sintering temperatures of the Co-doped BaTiO{sub 3} ceramics decreased (about 100 deg. C) and the Curie temperatures of the ceramics were then moved to lower temperature. In addition, the dielectric constant of the ceramics doping ...

International Nuclear Information System (INIS)

We investigate the evolution of Type Ib/c supernova (SN Ib/c) progenitors in close binary systems, using new evolutionary models that include the effects of rotation, with initial masses of 12-25 M_s_u_n for the primary components, and of single helium stars with initial masses of 2.8-20 M_s_u_n. We find that, despite the impact of tidal interaction on the rotation of primary stars, the amount of angular momentum retained in the core at the presupernova stage in different binary model sequences converges to a value similar to those found in previous single star models. This amount is large enough to produce millisecond pulsars, but too small to produce magnetars or long gamma-ray bursts. We employ the most up-to-date estimate for the Wolf-Rayet mass-loss rate, and its implications for SN Ib/c progenitors are discussed in detail. In terms of stellar structure, SN Ib/c progenitors in binary systems at solar metallicity are ...

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to ...

International Nuclear Information System (INIS)

The subject is reviewed in sections, entitled: introduction (historical); sources of short-lived radionuclides; carbon-11; nitrogen-13; oxygen-15; fluorine-18; bromine-77; iodine-123; astatine-211; other radionuclides (including Ga-67, Ga-68, In-111, In-113m, Tc-99m, and Pb-203). (U.K.).

Science.gov (United States)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, ...

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit ...

International Nuclear Information System (INIS)

The structural changes attendant on intermartensitic transformation in a Ni-Mg-Ga shape memory alloy are considered using magneto-optical visualization with the help of ferrite-garnet monocrystalline films. It is established that on the intermartensitic transformation the complete reorganization of martensite macrostructure fails. Martensite crystals resulted from the basic transformation change somewhat their sizes on intermartensitic transition. The existence of large-scale labyrinth magnetic domain structure is revealed

International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

International Nuclear Information System (INIS)

We use the Generalized Quasi-Chemical Approach (GQCA) combined with ab initio ultrasoft pseudopotential calculations within density functional theory in order to obtain the structural and electronic properties of Al_xGa_yIn_1_-_x_-_yX (X=As, P or N) quaternary alloys in the zincblende structure. Results for the bond lengths show that their variations with composition are approximately linear and that they do not deviate much from the values of the corresponding binary compounds. For the variation of the band gaps, we obtain a bowing parameter b=0.26 eV for the (Ga_0_._4_7In_0_._5_3As)_z(Al_0_._4_8In_0_._5_2As)_1_-_z quaternary alloy lattice matched to InP, in very good agreement with experimental data. In the case of AlGaInN, a bowing parameter of 0.22 eV is obtained for zincblende AlGaInN lattice matched to GaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Energy Technology Data Exchange (ETDEWEB)

Some properties of the remarkable Ti{sub 3}SiC{sub 2} based ceramic synthesised by hot pressing of elemental Ti, Si, and C powders have been investigated. Its flexural strength by using three point bending tests and fracture toughness by using single edge notched beam tests were measured at room temperature to be in the range 310-427 MPa and about 7.MPa m{sup 1/2}, respectively. This material is a relative 'soft' ceramic with a low hardness of 4 GPa. Ti{sub 3}SiC{sub 2} is similar to the soft metals and is a damage tolerant material that is able to contain the extent of microdamage. An oxidation test has been performed in the temperature range 1000-1400{sup o}C in air for 20 h. The oxidation resistance below 1100{sup o}C was good. Two oxidized layers were formed, the outer layer consisting of pure rutile-type TiO{sub 2}, and the inner layer a mixture of SiO{sub 2} and ...

Energy Technology Data Exchange (ETDEWEB)

Composite particles represented as TiV{sub 2.1}Ni{sub 0.3}-Raney Ni(R) were prepared by ball-milling a TiV{sub 2.1}Ni{sub 0.3} alloy with Raney Ni in the presence of 0.01 M sodium hypophosphite (NaH{sub 2}PO{sub 2}) aqueous solution as a reducing agent. The composite particles had different morphology from original TiV{sub 2.1}Ni{sub 0.3} alloy particles and TiV{sub 2.1}Ni{sub 0.3}-Raney Ni composite particles prepared by the ball-milling in the absence of the NaH{sub 2}PO{sub 2} aqueous solution. In charge-discharge cycle tests, the TiV{sub 2.1}Ni{sub 0.3}-Raney Ni(R) composite electrode showed the maximum discharge capacity of 620 mAh g{sup -1}, while its cycle durability was similar to the TiV{sub 2.1}Ni{sub 0.3} alloy electrode, which was explained from depth profiles of constituent elements by Auger electron spectroscopy (AES). In thermogravimetry (TG) and ...

Energy Technology Data Exchange (ETDEWEB)

Thin films of new metastable materials from the system Ti-B-C-N were deposited on metallic substrates by d.c. magnetron sputtering in different Ar+N{sub 2} atmospheres. The multiphase compound targets used were based on various compositions on the TiC-TiB{sub 2} and TiB{sub 2}-C tie lines of the Ti-B-C phase diagram. The structure and chemical composition of the films were characterized by electron microprobe analysis, depth profiling Auger electron spectroscopy, X-ray diffraction and transmission electron microscopy. The hardness, critical load of failure and the tribological behavior of the coatings were investigated. Superhard single-phase crystalline metastable Ti-B-C-N layers with hardness values exceeding 5000 HV{sub 0.05} and extremely low sliding wear against 100Cr6 and Al{sub 2}O{sub 3} counterparts could be produced by reactive sputtering of various ...

British Library Electronic Table of Contents (United Kingdom)

Three field experiments were conducted at the research fields of Plant Protection Research Institute, Iran, at different locations in 2004-2005 to study the efficacy of different broadleaved herbicides to control weeds in wheat. Treatments were the full-season hand weeded and weed-infested controls, and post-emergence applications of florasulam plus flumetsulam at 8.75, 10.50, and 12.25ga.i./ha, 2,4-D plus carfentrazone-ethyl at 210, 245, 280, and 490ga.i./ha, bromoxynil plus MCPA at 75, 100, and 150ga.i./ha, 2,4-D at 560, 720, and 1120ga.i./ha, tribenuron methyl, and 2,4-D plus MCPA. Herbicides were applied at wheat tillering stage. Naturally occurring broadleaved weed populations were used in experiments. Results indicated that bromoxynil plus MCPA at 150ga.i./ha, 2,4-D plus MCPA, and 2,...

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change ...

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In ...

International Nuclear Information System (INIS)

GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.