ga siwabessy reactor: Topics by WorldWideScience.org

Al[sub 0. 3]Ga[sub 0. 7]As/GaAs heterojunction tunnel diode for tandem solar cell applications

Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.

1996-12-31

2

Materials aspects of multijunction solar cells

A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

1994-06-30

3

GaAs/(ordered) GaInP2 Heterostructures under Pressure and HighMagnetic Fields

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

1991-05-01

4

Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces

No abstract prepared.

1998-09-01

5

Long-term optimization of fuel loading pattern using genetic algorithms and simulated annealing

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga"+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).

2009-10-12

6

InP-quantum dots in AlGaInP

This paper describes Automatic Refueling Planning System (ARPS) for a nuclear power station using Genetic Algorithms (GA) and a Simulated Annealing (SA). ARPS has been developed and verified by applying to the Fugen nuclear power station (NPS), which is a 165MWe, heavy water-moderated, boiling light water-cooled, pressure tube-type reactor developed by JNC utilizing mainly uranium and plutonium mixed oxide (MOX) fuel. Fuel loading patterns have been managed independently in the Fugen NPS since the initial core. A planning of an adequate fuel loading pattern on each operational cycle needs one to two months even for expert core management engineers, for the reason that it has multi-objective optimization and nonlinear problems. In order to achieve the optimum fuel loading pattern and a fuel cost reduction, ARPS has been developed by JNC and CRC Solutions Corporation for the last five years. ARPS firstly generates several thousand fuel loading ...

2003-04-20

7

Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping

No abstract prepared.

2006-07-01

8

OMVPE growth of GaP and AlGaP using tertiarybutylphosphine as the phosphorus source

The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good ...

2000-07-01

9

Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells

GaP and AlGaP were grown by atmospheric pressure OMVPE on GaP substrates using tertiarybutylphosphine as the phosphorus source. A specular surface of GaP was obtained on a (100) just-oriented surface at 700deg C. Hazy but uniform thickness AlGaP was obtained. The growth efficiency for GaP was 1.2x10{sup 3}{mu}m/mol and that for AlGaP was 2.1x10{sup 3}{mu}m/mol.4.2 K photoluminescence showed near-edge emission from both GaP and AlGaP. (orig.).

1991-03-01

10

Nb{sub 3}Sn ITER candidate conductor

No abstract prepared.

2000-09-01

11

Advances in the development of an AlGaAs/GaAs cascade solar cell using a patterned germanium tunnel interconnect

An internal-tin-process Nb{sub 3}Sn conductor, which is a prototype for the International Thermonuclear Experimental Reactor (ITER), was tested. The axial strain measurements were made over a range of magnetic fields from 15 to 25 T. The conductor specifications are given in Table 5, and the measured data are presented in Table 6 and Figs. 8 through 10. The I{sub c} and J{sub c} values are based on an electric field criterion (E{sub c}) of 2 {mu}V/cm. The results show a zero-strain 15 T value of J{sub c} (referred to the noncopper area) which was 0.50 GA/m{sup 2} and a peak (strain-free) J{sub c} value of 0.55 GA/m{sup 2}. The irreversible strain limit was reasonably high, 0.92%, and the compressive prestrain was 0.28%. The sample did not fracture until 1.09% strain.

1994-01-01

12

Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

1991-05-01

13

High-optical-quality GaInP and GaInP/AlInP double heterostructure lasers grown on GaAs substrates by gas-source molecular-beam epitaxy

The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native ...

1987-03-01

14

Influence of B atom diameter on annealing recovery rates of superconducting transition temperatures in irradiated A-15 (A_3B) compounds

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

1989-11-01

15

166Ho-HA evaluation as therapeutic agent for rheumatoid arthritis treatment

It has recently been shown that the superconducting properties of Nb-base A-15 compounds, A_3B, are severely degraded when exposed to high-energy (E>1 MeV) neutron irradiation at ambient reactor temperatures. In each case, superconducting transition temperatures, Tsub(c), and the Bragg Williams order parameters, S, were observed to decrease steadily with irradiations in excess of 10"1"8 nvt. During irradiation the A-15 structure is retained and subsequent isothermal annealing restores almost completely the compound's original Tsub(c) value. In this letter a correlation between B atom diameter and the recovery rates of Tsub(c) for the irradiated materials Nb_3Ge, Nb_3Ga, Nb_3Al and Nb_3Sn is reported. (Auth.).

16

Recent Progress in the Growth of Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition

Aim: Rheumatoid arthritis is a limiting disease having, among its pathological features, the inflammation of synovial tissue with progressive and later destruction of the articulation. This leads to joint deformation and loss of its function, generating pain and reducing the mobility of the affected articulation. The aim was to evaluate "1"6"6Ho-Hydroxyapatite ("1"6"6 Ho-HA) as potential radiopharmaceutical for the symptomatic treatment of chronic and acute arthritis. Materials and Methods: Holmiun-166 was produced by irradiation of Ho_2O_3 at La Reina Research Reactor, Nuclear Chilean Energy Commission. Hydroxyapatite was in-house synthesized. Its labelling and quality controls follows the internationally accepted procedures. An antigen's arthritis was induced to eight New Zealand rabbits with the "1"6"6 Ho-HA radiochemical being administered thereafter in two dosage modalities (single and double). The compound therapeutic efficiency was evaluated based upon ...

2002-09-01

17

Development of GaInAsP for GaInAsP/Ge cascade solar cells

We report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb active regions. These lasers have multi-stage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is an electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in conventional horizontal reactors. A single stage, optically pumped laser yielded improved power (greater than 650 mW/facet) at 80K and 3.8um. A multi-stage 3.8-3.9um laser structure operated up to T=170K. At 80K, peak power greater than 100mW and a high slope- efficiency were observed in gain guided lasers.

1998-01-01

18

Wolsung-1 NPP - electrictal systems

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. ...

1992-12-01

19

High performance AlGaN/GaN HEMTs with 2.4 #mu#m source-drain spacing

... power reactors pressure tube reactors reactors THERMAL REACTORS.

1980-06-18

20

GaInP[sub 2]/GaAs tandem cells: Problems and solutions

This paper describes the performance of AlGaN/GaN HEMTs with 2.4 #mu#m source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 #mu#m source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

2010-03-01

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21

Femtosecond Laser Passivation of GaAs Detector Material

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

1992-12-01

22

Excitonic transitions in InGaP/InAlGaP strained quantum wells

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

2008-06-07

23

AlxGa1-xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures

Excitonic transitions in metalorganic vapor phase epitaxially grown In[sub [ital x

1993-08-30

24

British Library Electronic Table of Contents (United Kingdom)

We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1-xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift.

2009-01-01

25

Ab initio-based approach on initial growth kinetics of GaN on GaN (001)

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations that incorporate free energy of the vapor phase in order to determine the initial growth process of cubic GaN on GaN (001)-(4x1). The results suggest that a N-adsorbed structure appears at the initial growth stage and then Ga adsorbs on the N-adsorbed GaN (001)-(4x1) surface. Considering this process, we performed Monte Carlo simulations. The results suggest that the maximum point of Ga coverage after supplying a Formula Not Shown monolayer of atoms shifted toward a Ga-rich condition from V/III=1.0.

2007-01-01

26

Parachute-like brake, in particular for the fuel-assembly transfer carriages of nuclear reactors

Study of radionuclide contributing to dose rates in 540 MWe plant environment

... brakes lmfbr type reactors breeder reactors epithermal reactors fast reactors

27

Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells

Tarapur Atomic Power Station Unit-4 is first 540 MWe pressurized heavy water reactor in India. It achieved criticality on 06th March 2005 and then operated at full power i.e 500 MWe. Radiation workers during the normal operation and reactor shutdown are exposed to radiation field. The control of dose rates and the collective dose of the radiation workers is most important for the best performance of the reactor. Experience gained during the operation of the 220 MWe reactors has shown that the Moderator system, primary heat transport system, annulus gas system and moderator cover gas system are the main systems contributing to the dose rate and collective dose. In order to identify the radio nuclides contributing to the radiation field, study was undertaken at TAPS Unit-4. Various samples from the Moderator, primary heat transport system, annulus gas system and moderator cover gas system were collected ...

2005-11-23

28

Theoretical approach to initial growth kinetics of GaN on GaN(001)

Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 A within 3000 A wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier-carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in ...

2008-04-21

29

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)b2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed ...

2007-01-01

30

High-efficiency GaAs solar cells

Development of high-efficiency GaAs solar cells on polycrystalline Ge substrates

An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for ...

1984-05-01

31

Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs ...

1996-01-01

32

Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

1994-07-11

33

GaInP/GaAs tandem concentrator cells

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

34

Flucton - drop of quark-gluon plasma

We discuss the initial development of a concentrator device based on the GaInP/GaAs monolithic tandem cell structure. The very high one-sun efficiency of this device, coupled with its characteristic low operating current, make this a promising candidate for use under high concentration. Test results for a prototype device are presented. This device achieves an efficiency of 29.5% at a concentration of 102 suns.

1994-06-30

35

Electrical properties of S implanted GaAs annealed by covering with As doped a-Si:H films

Russian 2003 p. 74 Russian Federation Leksin, GA Inst. Teoreticheskoj

36

Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors

Short communication.

1995-12-31

37

Surface-plasma interactions in GaAs subjected to capacitively coupled RF plasmas

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.

2009-08-15

38

Neutron diffraction study of 5f itinerant antiferromagnet UPtGa{sub 5} and UNiGa{sub 5}

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2p sub 3 sub / sub 2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga sub 2 O sub 3 powder were used. A separate study aiming the identification of the GaAs ...

2002-01-01

39

Research program: the investigation of heat transfer and fluid flow at low pressure

Magneto-striction and magnetic form factors in 5f itinerant antiferromagnets UNiGa{sub 5} and UPtGa{sub 5} are studied by means of neutron scattering. Remarkable magneto-striction was observed around T{sub N}, indicating large spin-orbit coupling in the itinerant system. The orbital magnetic moment is found to be strongly suppressed due to the hybridization of uranium 5f with Ga-4p electron.

2003-05-01

40

Measurement of achievable plutonium decontamination from gallium by means of Purex solvent extraction

This paper gives an overview of a multiyear joint research program being conducted at the University of New Mexico (UNM) with support from Sandia National Laboratories and GA Technologies. This research focuses on heat removal and fluid dynamics in flow regimes characterized by low pressure and low Reynolds number. The program was motivated by a desire to characterize and analyze cooling in a broad class of TRIGA-type reactors under: (a) typical operating conditions, (b) anticipated, new operating regimes, and (c) postulated accident conditions. It has also provided experimental verification of analytical tools used in design analysis. The paper includes descriptions of the UNM thermal-hydraulics test facility and the experimental test sections. During the first two years experiments were conducted using single, electrically heated rod in water and air annuli. This configuration provides an observable and serviceable simulation of a fuel rod ...

1986-04-07

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41

High-energy neutron irradiation of superconducting compounds

Gallium is present in surplus weapons-grade plutonium (WG-Pu) at a concentration of approximately 1 wt %. Plans are to dispose of surplus WG-Pu by converting it to UO{sub 2}-PuO{sub 2} mixed oxide (MOX) fuel and irradiating it in commercial power reactors. However, the presence of high concentrations of gallium in plutonium poses a potential corrosion problem during the process of MOX fuel irradiation. The batch experiments performed in this study were designed to measure the capability of the PUREX solvent extraction process to separate gallium from plutonium under idealized conditions. Radioactive tracing of the gallium with {sup 72}Ga enabled the accurate measurement of low concentrations of extractable gallium. The experiments approximated the proposed flowsheet for WG-Pu purification, except that only one stage was used for each process: extraction, scrubbing, and stripping. The gallium decontamination factor (DF) obtained after one ...

2000-07-01

42

A thermochemical hydrogen production system based on a high-temperature fusion reactor blanket

The effect of high-energy neutron irradiation (E greater than 1 MeV) at ambient reactor temperatures on the superconducting properties of a variety of superconducting compounds is reported. The materials studied include the A-15 compounds Nb_3Sn, Nb_3Al, Nb_3Ga, Nb_3Ge and V_3Si, the C-15 Laves phase HfV_2, the ternary molybdenum sulfide Mo_3Pb/sub 0.5/S_4 and the layered dichalcogenide NbSe_2. The superconducting transition temperature has been measured for all of the above materials for neutron fluences up to 5 x 10"1"9 n/cm"2. The critical current for multifilamentary Nb_3Sn has also been determined for fields up to 16 T and fluences between 3 x 10"1"7 n/cm"2 and 1.1 x 10"1"9 n/cm"2.

1976-03-01

43

The Daya Bay reactor neutrino experiment

A conceptual fusion synfuel production system has been developed with the unique features of: (1) a fusion blanket producing high-temperature (1250"0C) process heat, and (2) the GA sulfur-iodine thermochemical cycle. The system incorporates a two-zone blanket which achieves a tritium breeding ratio of 1.1 while delivering a high fraction (30%) of the fusion heat at high temperatures (1250"0C). The multiple barriers to tritium permeation in the blanket design permit the hydrogen product to meet 10CFR20 regulatory requirements without stringent requirements on the tritium recovery systems. A ceramic heat exchanger, incorporating SiC tubes and headers to contain the process stream and a cooled, Inconel 718 pressure shell to contain the helium, was designed for transferring the heat from the high-temperature coolant to the process. A good heat-line match of the blanket heatsource temperature distribution to the requirements of the thermochemical plant was attained ...

1983-04-26

44

NASTRAN nonlinear dynamic transient accident analysis for FFTF reactor component

The Daya Bay reactor neutrino experiment

2008-01-01

45

Fuel cycle of reactor SVBR-100

... computer calculations fftf reactor nonlinear problems reactor accidents reactor

1976-11-14

46

New plasma chemistries for dry etching of InGaAlP alloys: BI{sub 3} and BBr{sub 3}

... fast reactors fbr type reactors fuels liquid metal cooled reactors materials nuclear

47

New plasma chemistries for dry etching of InGaAlP alloys: BI_3 and BBr_3

Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI{sub 3} or BBr{sub 3} discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates ({gt}6000thinsp{Angstrom}thinspmin{sup {minus}1}) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI{sub 3} or BBr{sub 3} content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO{sub 2} and SiN{sub x} of {ge}8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and ...

1998-09-01

48

Application of DLTS method to investigation of deep defect centers in epitaxial layers of multicomponent A"I"I"I-B"V compounds

Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI_3 or BBr_3 discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates (>6000 Angstrom min"-"1) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI_3 or BBr_3 content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO_2 and SiN_x of #>=#8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and AlInP. copyright 1998 American Vacuum Society.

1998-09-01

49

Development of an IR-transparent, inverted-grown, thin-film, Al[sub 0. 34]Ga[sub 0. 66]As/GaAs cascade solar cell

The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range ...

50

Room-temperature continuous-wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor deposition

Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a ...

1992-12-01

51

Phase formation sequence in the Pd-GaAs system

Room-temperature continuous-wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 /sup 0/C for a device with an 8-..mu..m-wide and a 250-..mu..m-long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T/sub 0/ was 138 K under cw operation. The wafer with the MQW structure composed of 100-A-thick GaInP wells and 40-A-thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.

1987-04-20

52

Optoelectronic devices grown by metallo-organic chemical vapor deposition

The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

1985-12-01

53

MOCVD growth of GaAs solar cells on silicon substrates

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

54

GaP/Al/sub x/Ga/sub 1-x/P heterojunction transistors for high-temperature electronic applications

This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

1992-12-01

55

GaAs pattern etching with little damage by a combination of Ga"+focused-ion-beam irradiation and subsequent Cl_2 gas etching

Useful bipolar transistor action over the temperature range from -195 to 550 /sup 0/C has been demonstrated for heterojunction bipolar transistors in the GaP/AlGaP chemical system. This represents the highest temperature at which useful bipolar solid-state transistor action has ever been demonstrated in any material. Improvements in the materials technology and in the understanding of device characteristics at high temperatures were essential to the successful fabrication of these devices. These results demonstrate that the GaP/AlGaP heterojunction system is an excellent technology for active electronic components operated at high temperatures.

1983-10-01

56

GaAs pattern etching with little damage by a combination of Ga sup + focused-ion-beam irradiation and subsequent Cl sub 2 gas etching

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

57

Formation of defects in epitaxial heterostructures and multicomponent solid solutions of semiconductor compounds

Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.

1990-12-15

58

Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

59

High-spin structure of odd $^{71-81}$Ga isotopes with shell model

The band offsets and subband levels in a double quantum well layer for a 660 nm-Ga_0_._4In_0_._6P/(Al_0_._5Ga_0_._5)_0_._5In_0_._5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical calculation of the Schroedinger equation for the layer structure by varying the conduction band offset and compared with the measured photoreflectance spectra. The conduction band offset ratio is determined to be 0.5+0.03. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2009-06-01

60

GaP/Al/sub x/Ga/sub 1-x/P heterojunction bipolar junction transistor for high-temperature electronic applications

The recently measured experimental data of Argonne National Laboratory for high-spin states in neutron-rich $^{71,73,75,77}$Ga isotopes have been interpreted in the framework of large-scale shell model. Calculations have been performed in $f_{5/2}pg_{9/2}$ model space with two recent effective shell model interactions, JUN45 and jj44b. We also predict high-spin states for $^{79,81}$Ga, where very little is known experimentally. The calculated results show that existence of band structure built on top of the 3/2$^-$, 5/2$^-$ and 9/2$^+$ levels in $^{71-77}$Ga. The collective structure reflected in experimental data is not well reproduced in calculated values. The calculated positive parity states in $^{71,73,75}$Ga are higher in energy in comparison to experimental finding, while for $^{77,79}$Ga, the positive parity states are in better agreement. Both the interactions predict, ...

2011-01-01

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61

Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study

Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.

1982-01-01

62

Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

63

Nanometer size determination of type II domains in CuPt-ordered GaInP2 with high-pressure magneto-luminescence.

The authors report a two-temperature RF bias stress test on nominal 1.2 W 7.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTF`s of 2020 and 1340 hours were obtained at Tj = 218{degrees}C and 245{degrees}C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.

1995-12-31

64

Low-Resistance Nonalloyed Ti/Al Ohmic Contacts on N-Face n-Type GaN via an {O}_{2} Plasma Treatment

No abstract prepared.

1999-12-31

65

InP-quantum dots in AlGaInP

Not Available

2011-02-01

66

High efficiency GaInP/GaAs tandem solar cells

... dpg-tagungen.de Dresden (Germany) 27-31 Mar 2006 0420-0195 VDPEAZ

2006-03-27

67

GaInP/GaAs monolithic tandem concentrator cells

We report on multijunction GaInP/GaAs photovoltaic cells with total-area efficiencies of 29.5% at one-sun concentration and air mass (AM) 1.5 global and 25.7% one-sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed: the grid design, front surface passivation of the top cell, and bottom surface passivation of both cells. Aspects of cell design related to its operation under different solar spectra and under concentration are also discussed.

1994-06-30

68

Efficiency of silicon and GaAs concentrator solar cells operated inside integrating cavity receivers

This paper discusses design considerations for the recently introduced GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140--180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. The authors focus on the issues of grid design, top-cell thickness, and antireflectance coat. They also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.

1994-12-31

69

Effect of low dose of radioactive iodine on mammalian brain development

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

1991-06-01

70

0.6 #mu#m-band AlGaInP visible laser diodes

Russian 1997 p. 266-267 Russian Federation Ushakova, GA

71

"6"7Ga scintigraphy, serum lysozyme and angiotensin-converting enzyme in pulmonary sarcoidosis

Highly reliable, practical 0.6 #mu#m-band AlGaInP visible laser diodes (LDs), using a GaInP active layer, are described. Over 10,000 hour stable operation at 50 degrees C has been achieved for 3mW light output. Characteristics for visible LDs with an AlGaInP active layer or a multi-quantum-well active layer are also presented.

1988-11-02

72

Wet chemical etch solutions for Al{sub x}Ga{sub 1{minus}x}P

... angiotensin gallium 67 lungs lysozyme patients sarcomas beta decay

73

Spectroscopic studies of the Sm_3Ga_5O_1_2 monocrystals

Heterostructures based on AlGaInP alloy compounds are very attractive for visible semiconductor lasers, heterojunction bipolar transistors (HBTs), and high-electron-mobility transistors (HEMTs) lattice matched to GaAs substrates. Several wet etching solutions for AlGaP of different compositions have been studied. Al{sub 0.5}Ga{sub 0.5}P is found to etch in HF, H{sub 3}PO{sub 4}, hyphosphorous acid (HOPH{sub 2}:O), HCl, KOH, and 1% Br{sub 2}-methanol (MeOH). Etching of Al{sub 0.5}Ga{sub 0.5}P in HCl is reaction limited with an activation energy of {approximately}54.4 kJ/mol. At fixed conditions, the etch rates of Al{sub x}Ga{sub 1{minus}x}P vary exponentially with x in HF and HCl, while in 1% Br{sub 2}-MeOH and mixtures of HCl and HNO{sub 3} the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for ...

1996-01-01

74

Photoresponsivity of ultraviolet detectors based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloys

The fluorescence, absorption, infrared and Raman spectra of Sm_3Ga_5O_1_2 have been investigated. The energy-level schemes in the energy range 3000-16000 cm"-"1 have been determined. The number and symmetries of the Sm_3Ga_5O_1_2 crystal normal mode have been obtained by the molecular site group analysis and their comparison with the experiment has been made.

75

Photoresponsivity of ultraviolet detectors based on In_xAl_yGa_1_-_x_-_yN quaternary alloys

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 {mu}m In{sub x}Al{sub y}Ga{sub 1-x-y}N alloy grown on 0.5-1.0 {mu}m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In{sub x}Al{sub y}Ga{sub 1-x-y}N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al ...

2000-08-07

76

Metabolism of Gibberellin A₁₂ and A₁₂-Aldehyde in Developing Seeds of Pisum sativum L. ¹

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In_xAl_yGa_1_-_x_-_yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 #mu#m In_xAl_yGa_1_-_x_-_yN alloy grown on 0.5-1.0 #mu#m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In_xAl_yGa_1_-_x_-_yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In_xAl_yGa_1_-_x_-_yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have ...

2000-08-07

77

Point defects in dilute nitride III-N-As and III-N-P

Metabolism of [¹⁴C]gibberellin (GA) A₁₂ (GA₁₂) and [¹⁴C]gibberellin A₁₂-aldehyde (GA₁₂-aldehyde) was examined in cotyledons and seed...Full Text Available

1991-09-01

78

Deep-level defects and numerical simulation of radiation damage in GaAs solar cells

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

2006-04-01

79

Antiferromagnetic ordering of defects in GaAs

A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

1991-09-01

80

Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

1992-10-15

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

81

Evidence of network demixing in GeS2-Ga2S3 chalcogenide glasses: A phase transformation study

The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The ...

1999-02-23

82

Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds.

The information of phase transformation is attained by in situ XRD experiments leading to the knowledge of topological threshold in GeS2-Ga2S3 glasses. The turning point of phase transformation behavior is demonstrated to be glasses containing 14-15 mol% Ga2S3. To interpret it a network demixing model is further improved and proposed for the structure of these ternary or quasi-binary chalcogenide glasses. For the nearest-neighbor coordination environment of glass with a transitional composition of 85.7 mol% (6/7) GeS2.14.3 mol% (1/7) Ga2S3, six-coordinated [S3Ga-X-GaS3] units (X=S or None) are well isolated by the [GeS4] structures, which contributes to the decreasing of precipitation of Ga2S3 crystals in (100-x)GeS2-xGa2S3 (x?14.3) glasses corresponding to the experimental evidence of the phase transformation behavior. This scenario of intermediate-range ...

2011-03-01

83

MOCVD-grown Al /SUB 0. 5/ In /SUB 0. 5/ P-Ga /SUB 0. 5/ In /SUB 0. 5/ P double heterostructure lasers optically pumped at 90 K

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate ...

2011-05-17

84

InAlGaP vertical cavity surface emitting lasers (VCSELs): Processing and performance

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

1982-12-01

85

Multiplication measurements for initial startup with the mockup core for the FFTF

(Al{sub y}Ga{sub 1{minus}y}){sup 1{minus}x}In{sub x}P semiconductor alloys lattice-matched to GaAs are widely used in visible optoelectronic devices. One of the most recent developments in this area is the AlGaInP-based red vertical cavity surface emitting laser (VCSEL). These lasers, which employ AlGaInP active regions and AlGaAs distributed Bragg reflectors (DBRs), have demonstrated continuous-wave (CW) lasing over the 630--690 nm region of the spectrum. Applications for these lasers include plastic fiber data communications, laser printing and bar code scanning. In this paper, the authors present an overview of recent developments in the processing and performance of AlGaInP based VCSELs. This overview will include a review of the general heterostructure designs that have been employed, as well as the performance of lasers fabricated by both ion implantation ...

1997-06-01

86

CORE OF FAST BREEDER REACTOR

... fftf reactor mockup multiplication factors reactivity worths reactor cores reactor

1974-10-27

87

J-STORE (Japan)

Full Text Available

2006-06-02

88

Comparison of Al{sub 0.51}In{sub 0.49}P and Ga{sub 0.51}In{sub 0.49}P window layers for GaAs and GaInAsP solar cells

AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy

Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

1997-12-31

89

Visible light emitting vertical cavity surface emitting lasers

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a ...

1987-06-01

90

The Structural and Optical Properties of GaAs1-xPx /GaAs

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and ...

1995-06-27

91

Study of the effects of interactions quantum interference and disorder in GaAs and of GaAs jointed to a superconductor; Etude des effets d`interference quantique et de desordre dans GaAs avec interactions et GaAs connecte a un supraconducteur

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...

2008-08-25

92

Strain effect and characteristics of GaInP/AlGaInP strain-compensated multiple quantum wells

The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been ...

1997-11-07

93

Strain effect and characteristics of GaInP/AlGaInP strain-compensated multiple quantum wells

Ga{sub 0.6}In{sub 0.4}P/(Al{sub 0.8}Ga{sub 0.2}){sub 0.4}In{sub 0.6}P strain-compensated multiple quantum wells (SCMQW) and Ga{sub 0.5}In{sub 0.5}P/(Al{sub 0.4}Ga{sub 0.6}){sub 0.5}In{sub 0.5}P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

2003-02-15

94

Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

Ga_0_._6In_0_._4P/(Al_0_._8Ga_0_._2)_0_._4In_0_._6P strain-compensated multiple quantum wells (SCMQW) and Ga_0_._5In_0_._5P/(Al_0_._4Ga_0_._6)_0_._5In_0_._5P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

2003-02-15

95

Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition

Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

1986-01-20

96

Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys

Continuous-wave (cw) operation at temperatures up to 23 /sup 0/C of an Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P/Ga/sub 0.52/In/sub 0.48/P/ Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 /sup 0/C for a device with a 10-..mu..m-wide and 250-..mu..m-long ion-implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 /sup 0/C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (approx.0.3 ..mu..m) p-AlGaInP layer and a p-Al/sub 0.76/Ga/sub 0.24/As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.

1985-11-15

97

GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical ...

98

Defects induced by focused ion beam implantation in GaAs

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

2004-12-21

99

Defects induced by focused ion beam implantation in GaAs

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

1988-05-01

100

Comparison of plasma chemistries for inductively coupled plasma etching of InGaAlP alloys

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

101

Comparative study of phase stability and film morphology in thin-film M/GaAs systems (M = Co, Rh, Ir, Ni, Pd, and Pt)

Two plasma chemistries, i.e., CH_4/H_2/Ar and Cl_2/Ar, were compared for the etching of InGaP, AlInP, and AlGaP under inductively coupled plasma (ICP) conditions. While the etching with CH_4/H_2/Ar discharges appears to be ion driven, Cl_2/Ar discharges showed an additional strong chemical enhancement. The highest etch rate (#approx#1 #mu#m/min) for InGaP was achieved at high ICP source power (#>=#750 W) with the Cl_2/Ar chemistry. Cl_2/Ar discharges provided very smooth surfaces in all three materials with root-mean-square roughness measured by atomic force microscopy around 2 nm. This result may be due to the efficient ion-assisted product desorption in this chemistry. The etched near-surface region of InGaP (#approx#100 Angstrom) with Cl_2/Ar maintained almost the same stoichiometry as that of the unetched control. By contrast, the CH_4/H_2/Ar plasma chemistry produced somewhat rougher surfaces ...

1998-05-01

102

Al/sub 0. 3/Ga/sub 0. 7/P/sub 0. 01/As/sub 0. 99/ GaAs laser heterostructures grown by molecular beam epitaxy

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the ...

1987-09-01

103

Safe operation of research reactors and critical assemblies code of practice and annexes

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

1982-09-01

104

Investigation of Destruction Mechanisms in Reactor Steels

Safe operation of research reactors and critical assemblies

1984-01-01

105

Chemical Reactor Diagnostics

Investigation of Destruction Mechanisms in Reactor Steels and Alloys under Cycling Deformation

106

Using focused ion beam damage patterns to photoelectrochemically etch features in III-V materials

Development of Methods and Apparatus for Processes Diagnostics in Plasma Reactors at the Neutralization of Chemical Herbiside and Pestiside

107

Spectroscopic studies of the Sm/sub 3/Ga/sub 5/O/sub 12/ monocrystals

A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.

1986-03-10

108

Polycrystalline MBE-grown GaAs for solar cells

The fluorescence, absorption, infrared and Raman spectra of Sm/sub 3/Ga/sub 5/O/sub 12/ have been investigated. The energy-level schemes in the energy range 3000-16000 cm/sup -1/ have been determined. The number and symmetries of the Sm/sub 3/Ga/sub 5/O/sub 12/ crystal normal mode have been obtained by the molecular site group analysis and their comparison with the experiment has been made.

1984-11-01

109

Measurement of AlP/GaP (001) heterojunction band offsets by x-ray photoemission spectroscopy

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

1997-02-01

110

Local Heine-Abarenkov model potential for III-V and II-VI covalent compounds

X-ray photoemission spectroscopy has been used to measure the valence band offset {Delta}E{sub v} for the AlP/GaP (001) heterojunction interface. The heterojunction samples were prepared by molecular-beam epitaxy. A value of {triangle}E{sub v}=0.43 eV is obtained (staggered band alignment, with AlP valence band below that of GaP). 24 refs., 8 figs., 1 tab.

1993-07-01

111

Kinetic studies of alkali metal gallide decomposition in aqueous hydroxide solutions

A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

1983-10-01

112

High-power CW operation of AlGaInP laser-diode array at 640 nm

Kinetics of decomposition of gallium and alkali metal intermetallic compounds in the systems LiGa-LiOH, LiGa-NaOH and LiGa-KON was studied in the temperature range of 40-80 deg C. It was ascertained that increase in temperature gives rise to increase in decomposition rate, whereas increase in hydroxide concentration involves the reaction deceleration. An assumption was made that the decomposition occurs with superimposing of two mechanisms, i.e. chemical and electrochemical decomposition. Basic kinetic characteristics of the process were determined - decomposition rate constant and current density

2002-01-01

113

Design of LQ-PSS for Power System Stability Enhancement using GA

Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.

1995-02-01

114

Crystal field levels of Pr"3"+ in PrFeO_3 and PrGaO_3 determined by inelastic neutron scattering

This paper proposes the design of LQ-PSS (linear quadratic power system stabilizer) for improving power system stability using genetic algorithm(GA). We are turned weighting matrices of LQ-PSS using GA. To evaluate the usefulness of the proposed method, we performed the nonlinear simulation on a single machine infinite system. As results on a single machine infinite system. As results of the simulation, the proposed method shows the better control performance than CPSS(conventional power system stabilizer) in terms of settling time and damping effects. (author). 7 refs., 7 figs., 3 tabs.

2001-07-01

115

Critical phenomena in four-component systems

The crystal field splitting of the "3H_4 ground state of the Pr ion in PrFeO_3 and PrGaO_3 has been investigated by inelastic scattering of the thermal neutrons. At several temperatures the transitions have been measured by TAS and TOF methods for polycrystalline PrFeO_3 and by the TOF method for polycrystalline PrGaO_3. Energy level schemes which are different for these materials are given. (author).

1975-01-01

116

Continuous wave operation (77 K) of yellow (583. 6 nm) emitting AlGaInP double heterostructure laser diodes

This article examines problems relating to the calculation of the position of regions of limited solubility of components in the liquid state for four-component systems. An approach based on the use of criterion of stability with respect to diffusion for obtaining equations which describe the region of stratification of the liquid phase in a four-component system is used. The authors used a ES-1020 computer to analyze the critical phenomena in Al-In-P-Sb, Al-Ga-In-P, Al-Ga-In-As, and In-Ga-As-P systems. The position of the spinode in the phase diagram of a four-component system is obtained.

1987-06-01

117

Aluminium, gallium and indium complexing with methylthymol blue

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

1986-03-03

118

cw operation of an AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition

Al, Ga and In complexing with methylthymol blue (H_6R) purified by gel filtration is studied. in the case of metal excess complexes with the ratio of components M:H_6R=2:1 with #lambda#=587(Al), 590(Ga) and 593 nm(In) appear. In the case of reacting agent excess complexes with the ratio of component 1:1 with #lambda#_m_a_x=480-490 (Al) and 480 nm(Ga, In) appear. The mechanism of complexing reactions is studied. Molar extinction coefficients and stability constants are calculated.

1988-01-01

119

Vacancy ordering and oxygen dynamics in oxide ion conducting La1-xSrxGa1-xMgxO3-x ceramics: 71Ga, 25Mg and 17O NMR

Continuous wave operation of an Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P /Ga/sub 0.52/In/sub 0.48/P /Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 ..mu..m and the threshold current was 55 mA for a diode with a nitride-insulated, 8-..mu..m-wide and 250-..mu..m-long stripe geometry.

1984-09-15

120

Transmission electron microscopy of strained In/sub y/Ga/sub 1//sub -//sub y/As/GaAs multiquantum wells: The generation of misfit dislocations

The oxygen vacancies distribution in the rigid lattice and the thermally activated motion of oxygen atoms are studied in La1-xSrxGa1-xMgxO3-x (x=0.00; 0.05; 0.10; 0.15 and 0.20) compounds. For that 71Ga, 25Mg and 17O NMR was performed from 100 K up to 670 K, and ion conductivity measurements were carried out up to 1273 K. The comparison of the electric field gradients at the Ga- and Mg-sites evidences that oxygen vacancies appear exclusively near gallium cations as a species trapped below room temperature in local clusters, GaO5/2-#square#-GaO5/2. These clusters decay at higher temperature into mobile constituents of the structural octahedra Ga(O5/6#square#1/6)6/2. At the same time, the nearest octahedral oxygen environment of magnesium cations persists at different doping levels. The case of two adjacent vacant anion sites is found highly unlikely within the ...

2011-01-01

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121

Thin film GaAs solar cells on glass substrates by epitaxial liftoff

We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and ...

1989-05-01

122

Temperature dependence of threshold current of injection lasers for short pulse excitation

In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

1997-02-01

123

Single-event dynamics of high-performance HBTs and GaAs MESFETs

We report measurements of the temperature dependence of the threshold current of GaAs, 1.3-..mu..m InGaAsP, and 1.5-..mu..m InGaAsP double heterostructure lasers using short electrical pulses. T/sub 0/approx.200 K is observed for all the lasers. These high T/sub 0/ values show that the carrier density at threshold does not increase rapidly with increasing temperature in any of the lasers studied and thus the observed low cw T/sub 0/ of InGaAsP lasers is primarily due to a decrease of the carrier lifetime at threshold with increasing temperature.

1984-05-15

124

Radiation tolerant GaAs MESFET with a highly-doped thin active layer grown by OMVPE

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

1993-12-01

125

Novel photoaffinity ligands for the GA-receptor

A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.

1990-07-16

126

Lasing characteristics of visible AlGaInP/AlGaAs vertical-cavity lasers

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

1990-05-01

127

Incorporating phenolic compounds opens a new perspective to use zein films as flexible bioactive packaging materials

We report the lasing characteristics of gain-guided AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes. At room temperature, continuous-wave operation is achieved over the wavelength range of 657--685 nm with the minimum threshold current at 670 nm. Devices with a 10-[mu]m diameter have threshold currents as low as 1.25 mA at room temperature (297 K) and 0.8 mA at 250 K. In addition, a single predetermined linear polarization state is found, independent of the lasing mode order and operating temperature.

1994-07-01

128

British Library Electronic Table of Contents (United Kingdom)

To eliminate their classical brittleness and flexibility problems zein films were plasticized by incorporation of different phenolic acids (gallic acid (GA), p-hydroxy benzoic acid (HBA) or ferulic acids (FA)) or flavonoids (catechin (CAT), flavone (FLA) or quercetin (QU)). The use of GA, CAT, FA and HBA at 3 mg/cm2 eliminated the brittleness of films and gave highly flexible films showing elongations between 135% and 189%, while FLA and QU caused no considerable effect on film elongation. The films containing FA and HBA showed extreme swelling and lost their structural integrity when hydrated in distilled water. In contrast, CAT and GA containing films maintained their integrity following hydration. Most of the GA (up to 93%) and a considerable portion of CAT (up to 60%) in the films exis...

2011-01-01

129

InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

Effect of radioiodine on hyaluronate-binding activity during prenatal rat brain development

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of ...

1987-03-01

130

Determination of parameters of deep centers in the region of a space charge of CdS-GaAs heterojunctions from temperature dependence of capacity - rate variation

Russian 1997 p. 263-264 Russian Federation Tkach, VL Ushakova, GA

131

Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field

(1976). USSR Lupin, VM Ramazanov, PE Tomskij Gosudarstvennyj Univ.

1976-01-01

132

British Library Electronic Table of Contents (United Kingdom)

Within the framework of the effective-mass approximation, using a variational method, we have calculated the effect of intense laser radiation on the binding energy of the shallow-donor impurities in a Ga1- x In x N y As1- y /GaAs single quantum well for different nitrogen and indium mole concentrations. Our numerical results show that the binding energy strongly depends on the laser intensity and frequency (via the laser dressing parameter) and it also depends on the nitrogen and indium concentrations. Impurity binding energy under intense laser fields can be tuned by changing the nitrogen and indium mole fraction.

2011-01-01

133

A study on yellow luminescence in O and C ion implanted GaN

A Two-Dimensional (2D) Analytical Model for the Potential Distribution and Threshold Voltage of Short-Channel Ion-Implanted GaAs MESFETs under Dark and Illuminated Conditions

The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)

2008-08-01

134

680-nm band GaInP/AlGaInP tapered stripe laser

Full Text Available

2011-03-01

135

High-efficiency, thin-film- and concentrator solar cells from GaAs. Final report; High-efficiency, Duennschicht- und Konzentrator-Solarzellen aus Galliumarsenid. Abschlussbericht

A gain-guiding tapered stripe laser was fabricated using a Ga/sub 0.5/In/sub 0.5/P/(Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 /sup 0/C, an aspect ratio of about 2, and an astigmatism near 25 ..mu..m. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 /sup 0/C with a constant output power of 3 mW.

1987-11-16

136

Thermal wet oxidation of GaP and Al{sub 0.4}Ga{sub 0.6}P

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to ...

1996-10-01

137

Preparation of radiopharmaceuticals and labelled compounds using short-lived radionuclides

Thermal wet oxidations of GaP and Al{sub 0.4}Ga{sub 0.6}P at 650 degree sign C for various times have been performed. Comparisons are made on oxidation rates and post oxidation morphology. Transmission electron microscopy shows that when oxidizing GaP, polycrystalline monoclinic GaPO{sub 4}{center_dot}2H{sub 2}O forms without noticeable loss of phosphorus. Oxidation for 6 h or more leads to poor morphology resulting in cracks and detachment. A thickness expansion of about 2.5-3 times is noticed as a result of oxidation. In contrast, oxidized Al{sub 0.4}Ga{sub 0.6}P exhibits much better morphology without cracks or detachment from the substrate. The oxide has an almost amorphous-like microstructure. The oxidation process shows typical diffusion-limited reaction at long anneals. Preliminary work on the oxidation of AlP indicates that the reaction leads to formation of Al{sub 2}O{sub ...

2000-08-21

138

Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P and its heterostructures

The subject is reviewed in sections, entitled: introduction (historical); sources of short-lived radionuclides; carbon-11; nitrogen-13; oxygen-15; fluorine-18; bromine-77; iodine-123; astatine-211; other radionuclides (including Ga-67, Ga-68, In-111, In-113m, Tc-99m, and Pb-203). (U.K.).

139

Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0. 5/In/sub 0. 5/P and its heterostructures

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, ...

140

Optical characterization of long-term ordered and nanocrystalline GaP

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, ...

1988-09-01

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141

New materials for future generations of III-V solar cells

The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is reported from pure and ...

142

Measurement of radiative, Auger, and nonradiative currents in 1. 3-. mu. m InGaAsP buried heterostructure lasers

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit ...

1999-03-01

143

Magnetic domains in martensite of Ni-Mg-Ga alloy

Frequency response measurements are used to determine the carrier lifetime of 1.3-..mu..m InGaAsP buried heterostructure lasers between 1 mA and threshold. The data confirm previous results on the radiative and Auger recombination coefficients and reveal the presence of a nonradiative current which dominates at low currents and contributes 4 mA at threshold.

1987-02-09

144

Large orbital magnetic moment and its quenching in the itinerant uranium intermetallic compounds UTGa_5 (T=Ni, Pd, Pt)

The structural changes attendant on intermartensitic transformation in a Ni-Mg-Ga shape memory alloy are considered using magneto-optical visualization with the help of ferrite-garnet monocrystalline films. It is established that on the intermartensitic transformation the complete reorganization of martensite macrostructure fails. Martensite crystals resulted from the basic transformation change somewhat their sizes on intermartensitic transition. The existence of large-scale labyrinth magnetic domain structure is revealed

2006-05-01

145

GaAs detector optimization for different medical imaging applications

The crystal structure, lattice strain due to the antiferromagnetic ordering, and magnetic form factor in the itinerant 5f compounds UTGa_5 (T=Ni, Pd, Pt) have been studied by neutron scattering. High-resolution powder diffraction revealed that the tetragonality of the U-Ga layers increases down to the series of the transition metal element T. The integrated intensities of the antiferromagnetic reflections can be well explained with the Neel-type structure for UNiGa_5, whereas UPtGa_5 has the antiferromagnetic stacking of the ferromagnetically ordered uranium moments in the c plane. In both compounds the uranium moments orient along the c axis with moments of 0.75(5) and 0.32(5) #mu#_B for UNiGa_5 and UPtGa_5, respectively. No magnetic peak could be observed in the powder diffraction pattern of UPdGa_5 due to the small magnetic moment less than the experimental ...

2003-12-01

146

Ferromagnetism in Mn-doped GaAs layers: Effects of laser annealing

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

1999-09-11

147

Energy gap and bond lengths of Al_xGa_yIn_1_-_x_-_yN, Al_xGa_yIn_1_-_x_-_yP and Al_xGa_yIn_1_-_x_-_yAs quaternary alloys

The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.

2006-05-15

148

To Possibility of Usage of FMW Plasma Heating Scenarios in the ICR Frequency Range in the Torsatron Reactor

We use the Generalized Quasi-Chemical Approach (GQCA) combined with ab initio ultrasoft pseudopotential calculations within density functional theory in order to obtain the structural and electronic properties of Al_xGa_yIn_1_-_x_-_yX (X=As, P or N) quaternary alloys in the zincblende structure. Results for the bond lengths show that their variations with composition are approximately linear and that they do not deviate much from the values of the corresponding binary compounds. For the variation of the band gaps, we obtain a bowing parameter b=0.26 eV for the (Ga_0_._4_7In_0_._5_3As)_z(Al_0_._4_8In_0_._5_2As)_1_-_z quaternary alloy lattice matched to InP, in very good agreement with experimental data. In the case of AlGaInN, a bowing parameter of 0.22 eV is obtained for zincblende AlGaInN lattice matched to GaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

149

Status of reactor physics in Japan

The problem of fast wave plasma heating in reactor-torsatron at the ICRF range in scenarios, optimal for fusion reactor, is numerically studied.

2006-01-01

150

Power spectral density measurements with "2"5"2Cf for a mockup of the FFTF

Recent achievements and tendency on reactor physics activities in Japan are reviewed according to topics published in journals or discussed at the Japan Research Committee on Reactor Physics.

1988-09-18

151

Navy Nuclear-Powered Surface Ships: Background, Issues ...

... californium 252 fftf reactor mockup power density reactor cores reactor noise

1975-06-08

152

Feasibility assessment of performing FFTF unscrammed LOF proof-of-principle and verification data base tests

... and support cost, and post-retirement disposal cost) of ... from reactors, and the reactors and other ... the ship's hull and reactor compartment enough to ...

2010-06-10

153

A bibliography of AECL publications on reactor safety

... feasibility studies fftf reactor loss of flow reactor control systems reactor core

1985-06-09

154

X-ray study of CuGa_xIn_1_-_xSe_2 solid solutions

AECL Publications on Reactor Safety in CANDU Reactors are listed in this bibliography. The listing is chronological and the accompanying index is by subject. The bibliography will be brought up to date annually. (auth).

1995-05-08

155

Weed control and wheat (Triticum aestivum L.) yield under application of 2,4-D plus carfentrazone-ethyl and florasulam plus flumetsulam: Evaluation of the efficacy

The semiconducting compound CuGa_xIn_1_-_xSe_2 crystallizes in the chalcopyrite structure (space group Ianti 42d, Z=4). The X-ray powder data for x=1, 0.75, 0.6, 0.5, 0.4, 0.25 and 0.0 have been collected and it is found that the lattice parameters a and c and their ratio c/a vary linearly with x. Thus the composition of any chalcopyrite in the pseudo-binary system CuGaSe_2 and CuInSe_2 can be obtained from the accurate lattice parameters. The crystallite size determined from the (112) plane is minimum for x=0.50 (#propor to#1000 A) and away from x=0.50 it increases. A value of u=0.240 (5) has been established for fixing, the Se-atom positions in the CuGa_0_._5In_0_._5Se_2 solid solution. The JCPDS Diffraction File No. for CuInSe_2 is 40-1487 and for CuGa_0_._5In_0_._5Se_2 is 40-1488. (orig.).

1989-12-01

156

British Library Electronic Table of Contents (United Kingdom)

Three field experiments were conducted at the research fields of Plant Protection Research Institute, Iran, at different locations in 2004-2005 to study the efficacy of different broadleaved herbicides to control weeds in wheat. Treatments were the full-season hand weeded and weed-infested controls, and post-emergence applications of florasulam plus flumetsulam at 8.75, 10.50, and 12.25ga.i./ha, 2,4-D plus carfentrazone-ethyl at 210, 245, 280, and 490ga.i./ha, bromoxynil plus MCPA at 75, 100, and 150ga.i./ha, 2,4-D at 560, 720, and 1120ga.i./ha, tribenuron methyl, and 2,4-D plus MCPA. Herbicides were applied at wheat tillering stage. Naturally occurring broadleaved weed populations were used in experiments. Results indicated that bromoxynil plus MCPA at 150ga.i./ha, 2,4-D plus MCPA, and 2,...

2007-01-01

157

Visible-wavelength semiconductor lasers and arrays

Time-resolved resonance and linewidth of an ultrafast switched GaAs/AlAs microcavity

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

1996-09-17

158

The optical and structural properties of polycrystalline Cu(In,Ga)(Se,S)2 absorber thin films

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change ...

2009-01-01

159

British Library Electronic Table of Contents (United Kingdom)

The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...

2011-01-01

160

Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates

Photoconducting properties of ultraviolet detectors based on GaN and Al{sub 1{minus}x}Ga{sub x}N films grown by ECR-MBE

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In ...

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

161

Photoconducting properties of ultraviolet detectors based on GaN and Al_1_-_xGa_xN films grown by ECR-MBE

GaN and Al{sub 1{minus}x}Ga{sub x}N films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10{sup 9} ohm-cm and 10{sup {minus}3}--10{sup {minus}8} cm{sup 2}/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

1997-12-31

162

PIXE analysis of GaAs and ZnSe

GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

1996-12-02

163

PIXE analysis of GaAs and ZnSe

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K{sub {alpha}} X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K{sub {alpha}} X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the ...

1990-01-01

164

Indentation modulus and hardness in heteroepitaxial Al{sub x}Ga{sub 1{minus}x}P films

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K_#alpha# X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K_#alpha# X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the ...

1989-06-01

165

GaAs concentrator cell production cost analysis

Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear ...

1997-05-01

166

Diffusion mechanism of implanted Be in GaAs

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE ...

1992-12-01

167

AlGaInP single quantum well laser diodes

The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, ...

2008-01-15

168

626. 2-nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition

The properties and low pressure organometallic vapor phase epitaxy of Ga{sub x}In{sub 1{minus}x}P/(AlGa){sub 0.5}In{sub 0.5}P quantum well (QW) laser diode heterostructures with Al{sub 0.5}In{sub 0.5}P cladding layers, and having wavelength 614 < {lambda} < 690 nm, are described. At longer wavelengths ({lambda} > 660 nm), threshold current densities under 200 A/cm{sup 2} and efficiencies greater than 75% result from a biaxially-compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.

1994-12-31

169

Reactor control system using knowledge information

Room-temperature pulsed laser operation of (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P /(Al/sub 0.17/Ga/sub 0.83/)/sub 0.5/In/sub 0.5/P / (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved. The lasing wavelength is 626.2 nm, which is the shortest ever reported for an AlGaInP double heterostructure laser. Threshold current density is 50 kA/cm/sup 2/ for a diode with a 20-..mu..m-wide and 200-..mu..m-long stripe.

1985-01-01

170

FFTF reactor assembly system technology

No abstract prepared

1998-01-01

171

FFTF reactor assembly system technology

An overview is presented of the FFTF reactor and plant together with descriptions of core components, core internals, core system, primary and secondary control rod system, reactor instrumentation, reactor vessel and closure head, and supporting test programs. (DG)

1975-11-13

172

Water chemistry for mitigation of the corrosion damage of reactor structural materials

An overview is presented of the FFTF reactor and plant together with descriptions of core components, core internals, core system, primary and secondary control rod system, reactor instrumentation, reactor vessel and closure head, and supporting test programs.

1976-03-13

173

The formation of water chemical composition in the coolant pond of the Chernobylsk atomic power station

... 1343-3563 v. 57(1) SPECIFIC NUCLEAR REACTORS AND ASSOCIATED

2011-01-01

174

The Cordoba and Wolsung projects: a progress report

... thermal power plants thermal reactors water cooled reactors WATER

175

New Neutron Simulation Capabilities Provided by the Sandia Pulse Reactor-III (SPR-III) and the Upgraded Annular Core Pulse Reactor (ACPR)

Progress on construction of the Cordoba reactor in Argentina and the Wolsung reactor in Korea is described. (E.C.B.).

1977-06-01

176

MR-6 Type Fuel Elements Cooling in Natural Convection Conditions after Reactor Shutdown

Not Available

1978-01-01

177

Fluidic shut-down system for a nuclear reactor

... Natural convection cooling of the channel type reactor performed with the fuel

1992-08-03

178

CRC handbook of nuclear reactors calculations. Vol. II

... fluid poison control fluidic control devices reactors scram scram rods control

179

This handbook breaks down the complex field of nuclear reactor calculations into major steps. Each step presents a detailed analysis of the problems to be solved, the parameters involved, and the elaborate computer programs developed to perform the calculations. This book bridges the gap between nuclear reactor theory and the implementation of that theory, including the problems to be encountered and the level of confidence that should be given to the methods described. Volume II: Monte Carlo Calculations for Nuclear Reactors. In-Core Management of Four Reactor Types. In-Core Management in CANDU-PHW Reactors. Reactor Dynamics. The Theory of Neutron Leakage in Reactor Lattices. Index.

180

Annual report, 1979-1980

Visible (657 nm) InGaP/InAlGaP strained quantum well vertical-cavity surface-emitting laser

Information is presented concerning reactor research activities; isotope geology; NERC radiocarbon laboratory; teaching activities; and reactor operation.

1980-01-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

181

Solid-state precursor routes to III-V type electronic (13-15) and magnetic (3-15) materials

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser ...

1992-04-13

182

Schottky barrier and homojunction gallium arsenide solar cells

An interest in electronic materials has led me to investigate new synthetic approaches to III-V' type semiconducting (13-15, current IUPAC designation for B and N groups in the Periodic Table) and magnetic (3-15) compounds. It is now possible to prepare binary (GaAs and GdP) and ternary mixed-metal (Al[sub x]Ga[sub 1-x]As) and mixed-pnictide (GaP[sub x]As[sub 1-x]) compounds in seconds from rapid, low-temperature-initiated metathesis reactions between a metal (III) trihalide and a trisodium pnictide, exemplified by MX[sub 3] + Na[sub 3]Pn [yields] MPn + 3 NaX, where M is Al, Ga, In, (Al,Ga), or a lanthanide; X is F, Cl, or I; and Pn is P, As, Sb, or (P,As). The precursors are mixed together in a dry box and ignited by light grinding with a mortar and pestle, or by brief, local heating from a hot filament. These reactions are very exothermic (calculated [Delta]H[sub rxn] ...

1992-01-01

183

Optimization of doubly Q-switched lasers with both an acousto-optic modulator and a GaAs saturable absorber

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

1983-01-01

184

High ion density plasma etching of InGaP, AlInP, and AlGaP in CH{sub 4}/H{sub 2}/Ar

A doubly Q-switched laser with both an acousto-optic (AO) modulator and a GaAs saturable absorber can obtain a more symmetric and shorter pulse with high pulse peak power, which has been experimentally proved. The key parameters of an optimally coupled doubly Q-switched laser with both an AO modulator and a GaAs saturable absorber are determined, and a group of general curves are generated for what we believe is the first time, when the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined, and the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density as well as the influence of the AO Q-switch are considered. These key parameters include the optimal normalized coupling parameter, the optimal normalized GaAs saturable absorber parameters, and the normalized parameters of the AO Q-switch, which can maximize ...

2007-08-20

185

Electric-field-dependent electroreflectance spectra of visible-band-gap (InAlGa)P quantum-well structures

High microwave power (1,000 W) electron cyclotron resonance CH{sub 4}/H{sub 2}/Ar discharges produce etch rates for In{sub 0.5}Ga{sub 0.5}P, Al{sub 0.5}In{sub 0.5}P{sub 0.5}, and Al{sub 0.5}Ga{sub 0.5}P of {approximately} 2,000 {angstrom}/min at moderate RF power levels (150 W) and low pressure (1.5 mTorr). This is approximately a factor of five faster than for conventional reactive ion etching conditions where much higher ion energies are necessary. The etched surfaces are smooth over a wide range of CH{sub 4}-to-H{sub 2} ratios and microwave powers. AlInP is more resistant to preferential loss of P from the near-surface during etching than is InGaP. While the etching is ion-driven, pure Ar discharges produce rough surfaces and the CH{sub 4}/H{sub 2} is necessary in the achievement of acceptable morphologies. The InGaAlP/GaAs heterostructure is being increasingly utilized in diode lasers, light ...

1996-03-01

186

Electric-field-dependent electroreflectance spectra of visible-band-gap (InAlGa)P quantum-well structures

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our ...

1994-04-04

187

Analysis of the MEX-15 multipurpose reactor using SRAC code system

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that ...

188

Tumour affinity of [sup 203]Pb-chloride: comparison with [sup 67]Ga-citrate and [sup 201]Tl-chloride

The MEX-15 is a conceptual design of a Multipurpose Reactor with thermal power of 15 MW and this reactor is pool type with fuel plates U{sub 3}0{sub 8}-Al of low enrichment uranium. This report presents the static calculation for the MEX-15 reactor using SRAC code system and was developed under the collaboration agreement between ININ-JAERI in Research Reactor Technology Development Division of Department of Research Reactor in Tokai Research Establishment. (Author)

1992-12-15

189

Temperature and time-dependence of the elastic moduli of Pu and Pu-Ga alloys

[sup 203]Pb-chloride is a promising imaging agent for tumour scanning because of the large retention value for tumour tissue and the small value for normal organs, but the large value for the kidneys and bone is a shortcoming. The retention value of [sup 203]Pb in tumour tissue is larger than that of [sup 201]Tl and smaller than that of [sup 67]Ga. The tumour/inflammatory lesion retention ratio for [sup 203]Pb is very large in comparison with those for [sup 67]Ga and [sup 201]Tl. [sup 203]Pb accumulates to a large extent in viable tumour tissue, and less in necrotic tumour tissue and in inflammatory lesion. (author).

1994-01-01

190

Studies on the superconducting properties of A-15 type intermetallic compounds

In previous work, on cooling from 300 K to 10 K the elastic moduli for both #alpha#- and #delta#-Pu dropped 30%. This large change may reflect effects of 5f-electron localization. In this work, the elastic moduli at ambient temperature of several Pu-Ga alloys were measured using resonant ultrasound spectroscopy (RUS). The strong temperature dependence of the bulk and shear modulus and the temperature independence of Poisson's ratio was confirmed and the upper temperature limit for #alpha#-Pu was extended to 360 K. Measurements of the time dependence of the shear moduli of Pu and Pu-2.36 at.% Ga were determined with high precision as a function of time and temperature. Using a model for time dependence of point defects, we determined the exponential time constant at ambient temperature for such variations. The low temperature results are consistent with Fluss .

2007-10-11

191

Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis

The influence of 3d-transition metal impurities on the superconducting properties of the A-15 compounds V_3Si and V_3Ga have been investigated. In the case of V_3Si, the Fe impurities replacing V were found to have a local moment. A compensation effect was found in this case, resulting in a 20KOe increase in the upper critical field at dilute concentrations of Fe. It was demonstrated that long range order V_3Ga possessed higher transition temperature and upper critical field than found hitherto. Investigations on Nb_3Ge/sub 1-x/Ga/sub x/ films obtained by chemical vapor deposition has clearly shown the relation between the transition temperature and structural characteristics. The influence of generalized defects on the superconducting properties in A-15 type Nb_3X compounds has been discussed.

192

Single phase polycrystalline metastable (GaSb)/sub 1-x/Ge/sub x/ alloys from annealing of amorphous mixtures: Ion mixing effects during deposition

We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence '' hot '' implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900"oC up to 20-90 nm in those annealed at 1100"oC. For the samples annealed at 900"oC a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed. (author)

2011-07-01

193

Photoluminescences from Al{sub x}Ga{sub 1{minus}x}P liquid phase epitaxial layers

Low energy (<100 eV) Ar"+ ion bombardment of the growing film during the deposition of amorphous GaSb+Ge mixtures was found to affect both the transformation rate kinetics as well as the reaction path during subsequent annealing. Ion bombardment induced collisional cascades resulted in more random mixing in the growing films thus retarding the rate of the amorphous to equilibrium state phase transformation during annealing and allowing the formation of homogeneous metastable randomly oriented single phase (GaSb)/sub 1-x/Ge/sub x/ alloys. The films were approx.1.5 #mu#m thick and the average grain size in the metastable state was approx.300 A.

6180-01-01

194

Observation of strain-enhanced electron-spin polarization in photoemission from InGaAs

Homogenous Al{sub x}Ga{sub 1{minus}x}P liquid phase epitaxial layers have been obtained with the temperature difference method under controlled vapor pressure (TDM-CVP). Very clear fine structures near band edge in photoluminescence spectra have been observed at 77 K for the first time. Photoluminescence measurement results confirmed that the free exciton recombination without phonon assistance plays an important role in the luminescence at 77 K and becomes dominant at room temperature. It is considered that Zero-phonon assisted free exciton recombination is intensified by some local perturbations to electrical potentials against carriers or excitons introduced by Al atoms in Al{sub x}Ga{sub 1{minus}x}P layers, which can give momentum change necessary for recombination.

1999-10-01

195

Microscopic Origin of the Phenomenological Equilibrium ''Doping Limit Rule'' in n -Type III-V Semiconductors

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

196

Metastable one- and two-electron donor states in GaAs and CdF{sub 2}

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

2000-02-07

197

Kramers-Kronig Analysis of Infrared Reflectance Spectra for Quaternary In_xAl_yGa_1_-_x_-_yN Alloy

The strongly localized one-electron (D{sup 0}) and two-electron (D{sup -}) donor states are considered with the lattice deformation around the donor center taken into account. For GaAs, donor energy levels have been calculated as functions of the hydrostatic pressure. The calculated energy positions and pressure coefficients agree with the experimental data. It is shown that the interaction with phonons reduces the probability of radiative transitions between the states of different localization and leads to the metastability of shallow-level donor states with respect to the D{sup -} state in GaAs and both the states (D{sup 0} and D{sup -}) in CdF{sub 2}. (author) 7 refs, 1 fig

1996-12-31

198

Interface-induced conversion of infrared to visible light at semiconductor interfaces

In this paper, a Kramers-Kronig (KK) analysis of infrared (IR) reflectance spectrum of quaternary In_0_._0_1Al_0_._0_6Ga_0_._9_3N film grown by molecular beam epitaxy (MBE) is reported. The infrared measurement is performed in the reflection mode at an incident angle of 15 degree sign by Fourier transform infrared (FTIR) spectroscopy at T = 300 K. The Kramers-Kronig analysis of the reflectivity data has been used to obtain the real and imaginary parts of the index of refraction (n and k), and the real and imaginary parts of the dielectric response function (#epsilon#' and #epsilon#') of the materials. Finally, the transverse optical and longitudinal optical phonons for quaternary In_xAl_yGa_1_-_x_-_yN were obtained.

2010-07-07

199

High-performance concentrator tandem solar cells based on IR-sensitive bottom cells

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.

200

High power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy

Computer simulations of two-junction, concentrator tandem solar cell performance show that IR-sensitive bottom cells are required to achieve high efficiencies. Based on this conclusion, two novel concentrator tandem designs are under investigations: (1) a mechanically stacked, four-terminal GaAs/GaInAsP (0.95 eV) tandem, and (2) a monolithic, lattice-matched, three-terminal InP/GaInAs tandem. In preliminary experiments, terrestrial concentrator efficiencies exceeding 30% have been achieved with each of the above tandem designs. Methods for improving the efficiency of each tandem type are discussed. (orig.).

1991-05-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

201

Generation and relaxation of microstrains in GaN nanocrystals under extreme pressures

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow rid structures were 300 A/cm{sup 2} and 330 A/cm{sup 2} for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87--89% and the internal losses of 7--10 cm{sup {minus}1} were obtained.

1996-03-01

202

Dynamic Model Updating Using Particle Swarm Optimization Method

Nanocrystalline powders of GaN with grain sizes ranging from 2 to 30 nm were examined under high external pressures by in situ diffraction techniques in a diamond anvil cell at DESY (HASYLAB, Station F3). The experiments on densification of pure powders under high pressure were performed without a pressure medium. The mechanism of generation and relaxation of internal strains and their distribution in nanoparticles was deduced from Bragg reflections recorded in situ under high pressures at room temperature. The microstrain was calculated from the full-width at half-maximum (FWHM) values of the Bragg lines. It was found that microstrains in GaN crystallites are generated and subsequently relaxed by two mechanisms: generation of stacking faults and change of the size and shape of the grains occurring under external stress. (author)

2001-09-23

203

Diffuse X-ray scattering study of sublattice ordering among group III atoms in In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P

This paper proposes the use of particle swarm optimization method (PSO) for finite element (FE) model updating. The PSO method is compared to the existing methods that use simulated annealing (SA) or genetic algorithms (GA) for FE model for model updating. The proposed method is tested on an unsymmetrical H-shaped structure. It is observed that the proposed method gives updated natural frequencies the most accurate and followed by those given by an updated model that was obtained using the GA and a full FE model. It is also observed that the proposed method gives updated mode shapes that are best correlated to the measured ones, followed by those given by an updated model that was obtained using the SA and a full FE model. Furthermore, it is observed that the PSO achieves this accuracy at a computational speed that is faster than that by the GA and a full FE model which is faster than the SA and a full FE model.

2007-01-01

204

Adhesion studies of Au films on GaAs using ion-assisted deposition techniques

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

205

5 GHz GaAs monolithic astable multivibrator type voltage controlled oscillator

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

206

ZZ KAFAX-F22, 80 and 24 Groups Cross-Section Library in MATXS Format Based on JEF-2.2 for Fast Reactors

A 5 GHz GaAs monolithic astable multivibrator-type voltage-controlled oscillator has been developed. The monolithic oscillator uses 2 micron long self-aligned TiW-silicide gate MESFETs as well as GaAs Schottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X-band oscillation frequency can be obtained with 1 micron long gate FET and low loss resonance inductors.

1984-03-01

207

Transportation for reprocessing of the spent nuclear fuel (SNF) of TVR ITEP research reactor and proposals for SNF management plans for the RA reactor

1 - Description: Format: MATXS. Number of groups: 80 neutron-, 24 photon-groups. 97 Nuclides: 1-H-1, 1-H-2, 2-He-3, 2-He-4, 3-Li-6, 3-Li-7, 4-Be-9, 5-B-10, 5-B-11, 6-C- nat., 7-N-14, 7-N-15, 8-O-16, 9-F-19, 11-Na-23, 12-Mg-nat., 13-Al-27, 14-Si-nat., 15-P-31, 17-Cl-nat., 18-Ar-40, 19-K-nat., 20-Ca-nat., 22-Ti-nat., 23-V-nat., 24-Cr-50, 24-Cr-52, 24-Cr-53, 24-Cr-54, 25-Mn-25, 26-Fe-54, 26-Fe-56, 26-Fe-57, 26-Fe-58, 27-Co-59, 28-Ni-58, 28-Ni-60, 28-Ni-61, 28-Ni-62, 28-Ni-64, 29-Cu-nat., 31-Ga-nat., 39-Y-89, 40-Zr-nat., 41-Nb-93, 42-Mo-nat., 47-Ag-107, 47-Ag-109, 48-Cd-nat., 50-Sn-nat., 63-Eu-151, 63-Eu-153, 64-Gd-152, 64-Gd-154, 64-Gd-155, 64-Gd-156, 64-Gd-157, 64-Gd-158, 64-Gd-160, 73-Ta-181, 74-W-182, 74-W-183, 74-W-184, 74-W-186, 75-Re-185, 75-Re-187, 79-Au-197, 82-Pb-nat., 83-Bi-209, 90-Th-232, 91-Pa-233, 92-U-232, 92-U-233, 92-U-234, 92-U-235, 92-U-236, 92-U-237, 92-U-238, 93-Np-237, 93-Np-238, 94-Pu-238, 94-Pu-239, 94-Pu-240, 94-Pu-241, 94-Pu-242, 95-Am-241, ...

208

Nuclear Power Reactors in the World. 2009 Ed

The TVR heavy water research reactor was deployed at Moscow Institute of Theoretical and Experimental Physics. In 1990, the final batch of the spent nuclear fuel from this reactor was shipped to Production Association (PA) 'Mayak' for reprocessing. The SNF removal was a stage of the reactor decommissioning activities. The designs of the TVR reactor and its fuel elements are similar to the RA reactor designs. Two ways of the RA reactor SNF transportation to PA 'Mayak' have been considered: in aluminum barrels and in additional canisters using respectively TUK-32 and TUK-19 shipping casks. The practical experience and the equipment used to prepare for the TVR reactor SNF removal can be helpful to the RA reactor personnel in finding the best way to perform these engineering operations. (author)

2003-03-09

209

One-piece removal of JRR-3 reactor block

This is the twenty-ninth edition of Reference Data Series No. 2, Nuclear Power Reactors in the World, which is published once per year, and presents the most recent reactor data available to the IAEA. It contains the following summarized information: - General information as of the end of 2008 on power reactors operating or under construction, and shut down; - Performance data on reactors operating in the Agency's Member States, as reported to the IAEA. The IAEA's Power Reactor Information System (PRIS) is a comprehensive data source on nuclear power reactors in the world. It includes specification and performance history data of operating reactors as well as reactors under construction or reactors being decommissioned. PRIS data are collected by the IAEA through the designated national ...

210

Development of the Regulation Concept for a Fusion Reactor

JRR-3 is a research reactor of 10 MWt output, which attained the criticality in 1962. All the design, manufacture, installation and others of this reactor were carried out by Japanese technologies, except the fuel and heavy water as the moderator and coolant, therefore it is nicknamed Home-made No.1 Reactor. Recently, due to the change in the state of utilizing research reactors and the rise of quality in the utilization, JRR-3 has become to be unable to meet sufficiently the needs of users. The plan of reconstructing the JRR-3 was considered under such situation, and in order to reuse the reactor building, the reactor proper is removed, and an entirely new, high performance, versatile reactor is to be constructed. In this paper, as to the removal works of the JRR-3 reactor proper, the method of execution, design, the ...

1987-07-01

211

Yellow-emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition

Fusion energy has been studied in many countries such as U.S., France, Japan, Korea etc. Because it would provide much more energy for a given weight of fuel than any technology currently in use, and the fuel itself (primarily deuterium) exists abundantly in the Earth's ocean. Nuclear fusion reactor uses tritium and deuterium as fuel while nuclear fission reactor uses uranium and plutonium as fuel. Besides, inherent design characteristics and driving condition of nuclear fusion reactor is different from those of nuclear fission reactor. Therefore, we cannot apply the regulation rules of nuclear fission reactor to nuclear fusion reactor without change and thus it is needed to development of the safety regulation concept which reflects the characteristics of nuclear fusion reactor. Safety regulation of nuclear fusion ...

2010-10-01

212

Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy

Yellow-emitting pulsed laser operation of an Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P/Al/sub 0.16/Ga/sub 0.36/In/sub 0.48/P/ Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm/sup 2/ for a diode with a Si/sub 3/N/sub 4/ insulated 8-..mu..m-wide and 250-..mu..m-long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.

1984-11-01

213

Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy

AlGaInP epitaxial layers grown at 690 {degree}C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the {l brace}111{r brace} directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, finally, ...

1990-04-09

214

The potential of III-V semiconductors as terrestrial photovoltaic devices

AlGaInP epitaxial layers grown at 690 degree C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the #left brace#111#right brace# directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, ...

215

The effects of pressure on the electronic, transport and dynamical properties of AuX_2 (X = Al, Ga and In)

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on ...

2006-07-01

216

The McGurk phenomenon in Italian listeners

The electronic band structure, transport properties, and lattice dynamics in AuX_2 (X = Al, Ga and In) under high pressure have been extensively studied with full potential linearized augmented plane wave and pseudopotential plane wave methods. The theoretical results for the electronic band structure and Fermi surface reveal pressure-induced electronic topological transitions (ETTs) in AuGa_2 and AuIn_2, while they are absent in AuAl_2, in excellent agreement with the experimental observations. Moreover, calculations of the transport properties at different pressures reveal subtle changes in the band structure close to the Fermi surface of the three intermetallic compounds. It is clear that the anomalies in transport properties are due to ETTs. Interestingly, a pressure-induced soft transverse acoustic (TA) phonon mode is identified only in AuGa_2. The TA phonon instability at the Brillouin zone boundary L point might be ...

2007-10-24

217

Spin-lattice relaxation in A-15 type intermetallic compounds

SummaryIn the classic example of the McGurk effect, when subjects see a speaker say /ga/ and hear a simultaneous /ba/, they typically perceive /da/, a syllable that was not presented...Full Text Available

2009-08-01

218

Spin-lattice relaxation in A-15 type intermetallic compounds

The temperature dependence of T/sub 1/ spin-lattice relaxation time on /sup 51/V, /sup 69/Ga, /sup 71/Ga and Knight shift on /sup 51/V and /sup 29/Si nuclei in polycrystalline V/sub 3/Si, V/sub 3/Ga, V/sub 3/Ge and in the monocrystal V/sub 3/Si in normal state is investigated. For V/sub 3/Si and V/sub 3/Ga a rapid growth (T/sub 1/T)/sup -1/ is observed with temperature decrease while for V/sub 3/Ge the maximum (T/sub 1/T)/sup -1/ at T approximately equal to 60 K has been found. The temperature dependence peculiarities have been discussed on the basis of theoretical models available and zone structure calculations for A-15 compounds. The T/sub 1/ anisotropy and possibility of its experimental discovery are considered. Anisotropic contribution in (T/sub 1/T)/sup -1/ and contributions of d states of different symmetries into the electron state density at the Fermi level are estimated for V/sub 3/Si from ...

1981-04-01

219

Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs

The temperature dependence of T_1 spin-lattice relaxation time on "5"1V, "6"9Ga, "7"1Ga and Knight shift on "5"1V and "2"9Si nuclei in polycrystalline V_3Si, V_3Ga, V_3Ge and in the monocrystal V_3Si in normal state is investigated. For V_3Si and V_3Ga a rapid growth (T_1T)"-"1 is observed with temperature decrease while for V_3Ge the maximum (T_1T)"-"1 at T approximately equal to 60 K has been found. The temperature dependence peculiarities have been discussed on the basis of theoretical models available and zone structure calculations for A-15 compounds. The T_1 anisotropy and possibility of its experimental discovery are considered. Anisotropic contribution in (T_1T)"-"1 and contributions of d states of different symmetries into the electron state density at the Fermi level are estimated for V_3Si from T_1 measurements.

220

Short-wavelength (approx. 625 nm) room-temperature continuous laser operation of In/sub 0. 5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0. 5/P quantum well heterostructures

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the extended defects and on ...

2006-10-15

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221

QSAR Studies of Copper Azamacrocycles and Thiosemicarbazones

Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In/sub 1-//sub y/(Al/sub x/Ga/sub 1-//sub x/)/sub y/P-In/sub 1-//sub y/ (Al/sub x/Ga/sub 1-//sub x/)/sub y/P quantum well heterostructures grown lattice matched (yapprox. =0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (J/sub th/approx.10/sup 4/ A/cm/sup 2/, 625 nm) of diodes fabricated from the same crystal is described.

1988-04-18

222

Properties of superconducting Cu-rich composites containing V_3Si or V_3Ga

Genetic algorithms (GA) were used to develop specific copper metal-ligand force field parameters for the MM3 force field, from a combination of crystallographic structures and ab initio...Full Text Available

2005-08-25

223

Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces

Superconducting Cu-rich composites containing the A-15 compounds V_3Si or V_3Ga were made by the ''Tsuei'' process (melting into ingots followed by cold working and heat treatment). Superconducting transition temperatures of the composites were measured. X-ray diffraction analyses were performed. Microstructures were studied using both the optical metallograph and the scanning electron microscope. For some composites containing V_3Ga, the critical current densities as functions of transverse magnetic field up to 60 kG, and as functions of temperature from 4.2 to 12"0K were measured. It was found that the Tsuei process does not work for the composites containing V_3Si, but works satisfactorily for V_3Ga; reasons are discussed. Relations between measured properties and various metallurgical factors such as alloy compositions, cross-section reduction ratios, and heat treatment are discussed. The mechanism for the observed ...

224

Memorandum : No. 048-M : 03/06/95:The following statement ...

We report the growth and fabrication of midwave infrared InAs/GaSb strain layer superlattice (SLS) detectors. Growth of alternate interfaces leads to a reduced strain between the GaSb buffer and SLS ({delta}a{sub parallel}/a=-5x10{sup -4}), enabling the growth of active regions up to 3 {mu}m (625 periods). The structural, optical, and electrical properties of the active region were characterized using x-ray crystallography and photoluminescence, respectively. p-i-n detectors were grown using 625 periods of 8 ML (monolayer) InAs/8 ML GaSb as the active region. The {lambda}{sub cutoff} for the detectors was 4.6 {mu}m with a conversion efficiency of 32% at V{sub b}=-0.2 V. Detectivity was obtained using noise power spectral density measurements under 300 K 2{pi} field of view illumination and was equal to 5.2x10{sup 10} and 3x10{sup 10} cm Hz{sup 1/2}/W (V{sub b}=-0.02 V, T=80 K) in the white noise and 1/f noise limit (at 50 ...

2006-07-01

225

Long-life bismuth liquid metal ion source for focussed ion beam micromachining application

... We also toured a Trident submarine at Kings Bay, Ga. "During the weekend at the Joint Interagency Task Force Headquarters in Key West, Fla., we ...

226

InAIP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasers

Liquid metal ion sources (LMISs) with Ga as ion species are widely used in focused ion beam (FIB) technology for micromachining and surface treatment on the sub-micron and nano-scale. Key features of a LMIS for investigating mechanical properties and 3D-microfabrication of materials are long life-time, high brightness, stable ion current and a highly effective milling ability for the material to be modified. In order to increase the material removal rate, heavier ions than Ga and their clusters should be applied. Bismuth (Bi) is the heaviest, non-radio-active element in the periodic table, is non-toxic and exhibits a low melting point. We have thus produced a long-life (about 1000 h) Bi LMIS with a good beam performance, applicable in any FIB system. Since Bi is the only element in this source, it is not necessary to separate it from other ions by a mass filter. Investigation of the sputtering rate of NiTi shape memory alloys using ...

2008-09-15

227

High-efficiency solar cell and method for fabrication

Distributed Bragg reflectors (DBRs) composed of In[sub 0.5]Al[sub 0.5]P/In[sub 0.5](Al[sub [ital y

1993-05-31

228

High-efficiency GaAs solar cells on mm and sub-mm grain-size polycrystalline Ge substrates

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction ...

1999-08-31

229

High power (1,4W) AlGaInP graded-index separate confinement heterostructure visible (. lambda. -658 nm)laser

GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup 2}-area GaAs cell on ...

1997-02-01

230

High Efficiency Thin-Fili, GaAs Solar Cells - NASA Technical ...

A high power AlGaInP single quantum well graded index separate confinement heterostructure. It comprises a substrate and a multiplicity of layers deposited thereon comprising a single Ga{sub x}In{sub x}P quantum well where x has a value from about 0.4 to about 0.6; multiple graded index regions on both sides of the quantum well and cladding layers adjacent to each graded region of the well, the graded region comprising Al{sub y}(Ga{sub 1{minus}y}){sub 0.5}In{sub 0.5}P quaternary alloy; wherein the value of y in the graded region varies from about 0.2 at the quantum well/graded region interface to up to about 0.6 for the cladding layers/graded index regions; the heterostructure having a low broad area threshold current with pulsed thresholds in the range from about 1 to about 2 Amps/cm{sup 2} and a differential efficiency of from about 20 to about 60 percent.

1991-03-26

231

Growth of single-crystal metastable semiconducting (GaSb)_1/sub -//sub x/Ge/sub x/ films

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

232

Geological evolution of the center-southern portion of the Guyana shield based on the geochemical, geochronological and isotopic studies of paleoproterozoic granitoids from southeastern Roraima, Brazil; Evolucao geologica da porcao centro-sul do escudo das Guianas com base no estudo geoquimico, geocronologico e isotopico dos granitoides paleoproterozoicos do sudeste de Roraima, Brasil

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with ...

6180-01-01

233

GaInP high-power lasers; GaInP Hochleistungslaser

This study focuses the granitoids of center-southern portion of Guyana Shield, southeastern Roraima, Brazil. The region is characterized by two tectonic-stratigraphic domains, named as Central Guyana (GCD) and Uatuma-Anaua (UAD) and located probably in the limits of geochronological provinces (e.g. Ventuari-Tapajos or Tapajos-Parima, Central Amazonian and Maroni-Itacaiunas or Transamazon). The aim this doctoral thesis is to provide new petrological and lithostratigraphic constraints on the granitoid rocks and contribute to a better understanding of the origin and geo dynamic evolution of Guyana Shield. The GCD is only locally studied near to the UAD boundary, and new geological data and two single zircon Pb-evaporation ages in mylonitic biotite granodiorite (1.89 Ga) and foliated hastingsite-biotite granite (1.72 Ga) are presented. These ages of the protholiths contrast with the lithostratigraphic picture in the other areas of Cd (1.96-1.93 ...

2006-07-01

234

GaAs REI,IABILITY DATARASE '-r. SACCO, S . C+ ON Z, AItIli ...

The following work deals with the realization, characterization and modeling of GaInP / AlGaInP high power semiconductor laser diodes in the visible wavelength range. In addition to the exploration and optimization of efficiency, temperature stability and maximum output power of multi-mode lasers especially methods for longitudinal and lateral mode stabilization of high power laser diodes have been investigated. Although often the focus of optimization is on the threshold current density, in this work the performance of the laser diode for an operation point around 1 Watt under continous wave operation is regarded as the figure of merit. It turns out that low carrier densities are key for an efficient reduction of the heterobarrier leakage currents. In addition, large optical cavity structures with low internal losses enable high external quantum efficiencies even for long cavities. Finally high laser effiency as well as an efficient cooling ...

2002-07-01

235

Excitonic transitions in InGaP/InAlGaP strained quantum wells

Direct coupljng between Al and Au metal]jzations can result in an increase in gate resistance due to a metallurgical reaction. (purple plague). An RF life test on ...

236

Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications

Excitonic transitions in metalorganic vapor phase epitaxially grown In_xGa_1_-_xP/In_0_._4_8(Al_0_._7Ga_0_._3)_0_._5_2P strained single quantum-well structures are characterized using low-temperature photoluminescence and photoluminescence excitation (PLE) spectroscopies. The structures consist of several uncoupled quantum wells with thicknesses between 1.2 and 11.3 nm, and compositions x of 0.48 (nominally lattice matched) and 0.56 (#approx#0.6% biaxial compressive strain). The photoluminescence spectra exhibit intense peaks over the wavelength range 550--650 nm, with linewidths between 7 and 23 meV depending on the well thickness. The PLE spectra reveal strong heavy-hole and light-hole transitions, as well as higher-order (n=2) transitions in the thicker wells. The heavy-hole/light-hole splitting shows little dependence on well thickness in the strained structures, indicating a relatively large conduction band offset of ...

237

Electrical characteristics of AlxGa1-xN Schottky diodes prepared by a two-step surface treatment

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

2004-09-01

238

Effective removal of Ga residue from focused ion beam using a plasma cleaner

Near-ideal Schottky barrier contacts to n-type Al0.22Ga0.78N have been developed by a two-step surface treatment technique. Plasma etching of the AlxGa1-xN surface prior to Schottky metal deposition, combined with sequential chemical treatment of the etched surface, holds promise for developing high quality low-leakage Schottky contacts for low noise applications and for recessed gate high electron mobility transistors. In this work, the effect of postetch chemical treatment of the n-type Al0.22Ga0.78N surface on the performance of the Ni/Au based Schottky contact has been investigated. Three different types of chemical treatment: viz, reactive ion etching, reactive ion etching plus dipping in hot aqua regia, and reactive ion etching plus dipping in hot KOH, are studied. Detailed current-voltage studies of three different surface treated diodes and a comparison with as-deposited diodes reveal significant improvement in the ...

2004-09-01

239

Effect of V-shaped defects on structural and optical properties of AlGaN/InGaN multiple quantum wells

Samples prepared using the focused ion beam (FIB) inevitably contain the surface damage induced by energetic Ga"+ ions. An effective method of removing the surface damage is demonstrated using a plasma cleaner, a device which is widely used to minimize the surface contamination in scanning transmission electron microscopy (STEM). Surface bombardment with low-energy Ar"+ ions was induced by biasing the sample immersed in the plasma source, so as to etch off the surface materials. The etch rates of SiO_2, measured with a bias voltage of 100-300 V, were found to vary linearly with both the time and bias and were able to be controlled from 1.4 to 9 nm/min. The removal of the Ga residue was confirmed using energy dispersive spectroscopy (EDS) after the plasma processing of the FIB-prepared sample. When the FIB-prepared sample was processed via plasma etching for 10 min with a bias of 150 V, the surface Ga damage was completely ...

240

Correlation between ion beam parameters and physical characteristics of nanostructures fabricated by focused ion beam

We have investigated the correlation between V-shaped defect formation and the optical properties of AlGaN/(In)GaN multiple quantum wells (MQWs) grown under different growth conditions and then demonstrated the characteristics of fabricated ultraviolet (UV) light emitting diodes (LEDs). From the temperature-dependent photoluminescence (PL) measurement, the internal quantum efficiency for 300 K was obtained as 43.6% for a sample with a low density of V-defects in a MQW and 13.7% for a sample with a high density of V-defects. The carrier lifetime based on the time resolved PL measurement at room temperature was 0.32 ns for a sample with a high density of V-defects and 1.26 ns for a sample with a low density of V-defects. And we also found that the density of V-defects affected the external quantum efficiency and wall plug efficiency of the fabricated UV LEDs. (fast track communication)

2008-07-07

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

241

Comparison of beam-induced deposition using ion microprobe

We report a study of the physical characteristics of the pillars of C, Pt and W grown by 10-30 keV Ga focused ion beam (FIB) as a function of Ga ion flux, and present a quantitative analysis of the elements using energy-dispersive analysis of X-rays (EDAX). All the FIB grown pillars exhibit a rough morphology with whisker like protrusions on the cylindrical surface and broadening of the base as compared to the nominal size. For a constant fluence, the height of the pillar initially increases and then reduces after going through a maximum as a function of ion flux in all the cases. The compositional analysis shows good metallic quality for Pt structures but reveals significant contamination of Ga in C and Ga and C in W structures at higher ion fluxes. Explanation to all these observations has been sought in the light of secondary ion and electron effects and the different processes involved which lead to ...

2008-04-01

242

Band parameters for III - V compound semiconductors and their alloys

The localized Pt deposition on Si by 30 keV Ga"+ focused ion beam (FIB), 10 keV electron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be"2"+ microprobe with a beam spot size of 80 nm. The distribution of deposited Pt, Ga from the ion beam itself, and C from the precursor gas was obtained at and nearby the deposited areas by micro-RBS spectra and RBS mapping. All of the beam processed areas showed a uniform Pt distribution at the deposited areas. The amount of Pt atoms increased with the increase in ion or electron dose due to the decomposition of precursor gas. The thickness of Pt layer by EB is considerably less than that by FIB due to the reduced deposition rate. Ga atoms from the center of processed areas partly redeposited at and nearby the FIB processed areas within #approx#3 #mu#m. The Ga incorporation by dual beam processing was reduced ...

1999-01-02

243

Analysis of the 24 MeV alpha particle scattering on sup(10,11)B, sup(12,13,14)C, sup(14,15)N, sup(16,18)O nuclei

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned ...

2001-06-01

244

ARDS (Automated Requirements Development System) ...

Russian 1977. p. 178. USSR Feofilov, GA Denisov, AE Kolalis, RP Sadkovskij,

245

CRC handbook of nuclear reactors calculations. Vol. III

... AFM DOD AFR T. O FED DCAC MIL ANSIX AFSC JANAP DIAM GA RADC FIPS SDSP STDN AFNAG MM NORAD JSC NORADM ME NORADR ...

1983-11-01

246

Visible semiconductor lasers with the AlGaInP materials system

This handbook breaks down the complex field of nuclear reactor calculations into major steps. Each step presents a detailed analysis of the problems to be solved, the parameters involved, and the elaborate computer programs developed to perform the calculations. This book bridges the gap between nuclear reactor theory and the implementation of that theory, including the problems to be encountered and the level of confidence that should be given to the methods described. Volume III: Control Rods and Burnable Absorber Calculations. Perturbation Theory for Nuclear Reactor Analysis. Thermal Reactors Calculations. Fast Reactor Calculations. Seed-Blanket Reactors. Index.

247

The effects of the focus ion beam milling process on the optical properties of semiconductor nanostructures

The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.

1988-11-02

248

Review of the application of molecular beam epitaxy for high efficiency solar cell research

In this work, the effects of the focus ion beam (FIB) milling process on the optical properties of semiconductor nanostructures were investigated. With this aim, a sensitive materials system based on InGaAs/GaAs quantum dots with well known and excellent optical properties was selected for the FIB treatment. The FIB technique was used to locally remove a metallic mask deposited on top of the quantum dot sample. The photoluminescence (PL) signal, collected from the circular openings, was used to infer the possible damage effects of the ion beam on the properties of the dots.

2009-06-24

249

Radiation effect on optical, electrophysical and surface properties of GaAlAs heterostructures

In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).

1991-05-01

250

Quasi-elastic electron scattering by GaAs surface

A study was made on the effect of 3.5 MeV electron irradiation on the properties of light-emissive structure based on GaAlAs. It is shown that a considerable decrease in the emitted light intensity as a result of electron irradiation not accompanied by changes in recombination- and electric properties of the mentioned structures. It is established by the electron-microscopy and Auger-spectroscopy meazurements that electron irradiation causes the occurrence of regions of free aluminium clusters on the external surface of the structure n-layer. The number and the sizes of the regions depend on the electron doze. It was assumed that the mentioned regions can play a role of attenuation filter for the light emitted by the structure.

1984-07-01

251

Practical antireflection coatings for metal-semiconductor solar cells

Using the slow electrons spectrometer one can get information on the surface structure, its element composition, chemical bonds, adsorption phenomena, electron state density and surface oscillation. We have developed the methods and created the apparatus that makes it possible to investigate the electron backscattering by solid surface. We have studied the electron scattering by the polycrystalline and monocrystalline. GaAs surface in the energy range of 0 to 9 eV. The FWHM of electron energy distribution function was 70 meV. (author).

1994-03-20

252

Photon deficient bone metastasis of hepatocellular carcinoma with avid gallium-67 uptake

The metal-semiconductor solar cell is a potential candidate for converting solar energy to electrical energy for space and terrestrial application. In this paper, a method for obtaining parameters of practical antireflection (AR) coatings for the metal-semiconductor solar cells is given. This method utilizes the measured equivalent index of refraction obtained from ellipsometry, since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculations of optical parameters for Ta/sub 2/O/sub 5/ AR coatings on Au-GaAs and Au-GaAs/sub 0.78/P/sub 0.22/ solar cells are presented for comparison. (AIP)

1976-09-01

253

Patterns of gallium-67 scintigraphy in patients with acquired immunodeficiency syndrome and the AIDS related complex

While bone metastases producing photon deficient defects on bone scintigraphy have previously been reported, this finding has not been emphasized for hepatocellular carcinoma (HCC). Furthermore, ''filling-in'' of such photon deficient defects with 67Ga at skeletal sites of metastatic HCC has not been described. In this case report, the combination of a photon deficient defect on bone scintigraphy and avid accumulation of 67Ga in this same area was of value in confirming the diagnosis of metastatic HCC.

1985-12-01

254

Nb_3Al: paradigm for high T/sub c/ superconductors

Thirty-two patients with AIDS related complex (ARC) or acquired immunodeficiency syndrome (AIDS) underwent /sup 67/Ga scans as part of their evaluation. Three patterns of /sup 67/Ga biodistribution were found: lymph node uptake alone; diffuse pulmonary uptake; normal scan. Gallium-67 scans were useful in identifying clinically occult Pneumocystis carinii pneumonia in seven of 15 patients with ARC who were asymptomatic and had normal chest radiographs. Gallium scans are a useful ancillary procedure in the evaluation of patients with ARC or AIDS.

1987-07-01

255

MOVPE of (AlGaIn)P under the carrier gas nitrogen for LED structures; MOVPE von (AlGaIn)P unter dem Traegergas Stickstoff fuer LED-Strukturen

The A-15 compounds with the highest critical temperatures and critical fields are stable only at high temperatures and sometimes are not stable at any temperature. Fabrication of such materials thus necessarily involves the creation and manipulation of metastable phases. It follows that the bronze matrix technique now under development for Nb_3Sn- and V_3Ga-based composite superconductors is not suitable for high-T/sub c/ materials of the Nb_3 (Al, Ge, Ga, Si) family. Alternative technologies will be necessary for such materials. Efforts to develop suitable alternatives, using Nb_3Al, are described.

256

Lateral optical confinement of the heterostructure semiconductor Raman laser

This thesis dealt with the metal-organic gas phase epitaxy with nitrogen as carrier gas. For this first by means of three-dimensional modelings of the epitaxy process the influence of the carrier gas on the processes was explained. The optimization of the growth parameter for the whole light-emitting-diode structure in double-hetero arrangement resulted that an a temperature of 770 C and a V/ III-ratio of 150 layers with a high crystal quality could be reached.

2001-10-01

257

In-beam #gamma#-ray spectroscopy of fast beams at the NSCL

This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 ..mu..m and Al/sub 0.1/Ga/sub 0.9/P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.

1987-11-02

258

High-power continuous wave 690 nm AlGaInP laser-diode arrays

With the development of an array of highly-segmented germanium detectors, it now becomes possible to perform in-flight #gamma#-ray spectroscopy experiments on intermediate energy beams with unprecedented #gamma#-ray energy resolution. Presented in this report are examples of two techniques in which SeGA, the most highly-segmented operational germanium array for in-flight spectroscopy with fast beams, was used for the detection of #gamma# rays. SeGA used in conjunction with a high-resolution magnetic spectrograph (S800) to detect the reaction residues in coincidence represents a powerful combination for in-beam #gamma#-ray studies.

2004-04-05

259

GaP Project: #gamma#p, #gamma#e, #gamma##gamma# colliders physical programs and CompHEP computer system

High-power diode laser arrays emitting at 690 nm have been developed for solid-state laser pumping. The laser diode bars (fill factor [approx]0.7) have been fabricated from single quantum well AlGaInP-based heterostructures. Using silicon microchannel heatsinks, a record high 360 W/cm[sup 2] per emitting aperture is achieved under continuous wave operation.

1995-03-06

260

Design and experimental investigation of a decentralized GA-optimized neuro-fuzzy power system stabilizer

The Gamma Physics (GaP) program of physical phenomena investigation is proposed on #gamma#p, #gamma#e and #gamma##gamma# colliders at TeV energies. The program contains specialized software (CompHEP system) created for automation of particle interaction processes calculations in the framework of various gauge models. Preliminary physical results are presented (heavy quark production, W, Z production, supersymmetry etc.), and further software development is suggested. (R.P.) 22 refs., 8 figs., 4 tabs.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

261

Activation of aluminium metal to evolve hydrogen from water

The aim of this research is the design and implementation of a decentralized power system stabilizer (PSS) capable of performing well for a wide range of variations in system parameters and/or loading conditions. The framework of the design is based on Fuzzy Logic Control (FLC). In particular, the neuro-fuzzy control rules are derived from training three classical PSSs; each is tuned using GA so as to perform optimally at one operating point. The effectiveness and robustness of the designed stabilizer, after implementing it to the laboratory model, is investigated. The results of real-time implementation prove that the proposed PSS offers a superior performance in comparison with the conventional stabilizer. (author)

2010-09-15

262

Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys

The method of aluminium metal activation by liquid eutectics Ga-In (70:30) and Ga-In-Sn-Zn (60:25:10:5) is developed. Subsequent dispersion of the obtained specimens up to a particle size of >0.5mm leads to the drastic interaction of aluminium powder and water with evolving hydrogen. In the present work the oxidation rate of activated aluminium and water is investigated depending on eutectic composition, reaction temperature, and powder particle size. The mechanism of the main eutectic's components influence on the reacting ability of aluminium is discussed. (author)

2008-06-15

263

Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This ...

1992-12-01

264

Materials design for semiconductor spintronics by ab initio electronic-structure calculation

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This ...

1992-12-01

265

Highly reliable InGaP/InGaAlP visible light emitting inner stripe lasers with 667 nm lasing wavelength

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ...

2003-04-01

266

High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates

In order to obtain highly reliable InGaP/InGaAlP inner stripe (IS) lasers, the authors have clarified the relation between the maximum CW operation temperature and other laser characteristics, such as the pulsed threshold current, characteristic temperature, series resistance, and thermal resistance. The Al composition of the cladding layer, the carrier concentration of the p-cladding layer, and the thicknesses of the active layer and cladding layer have been optimized. It was found that an Al composition of 0.7 was the most suitable for the cladding layer, and the optimized carrier concentration was 4 x 10/sup 17/ cm/sup -3/. A maximum temperature of 90/sup 0/C was obtained for a 0.1 /mu/m active layer thickness and a 0.6 /mu/m cladding layer thickness. This is the highest value for InGaP/InGaAlP IS lasers, to our knowledge. In the case of a 0.06 /mu/m active layer thickness and a 0.8 /mu/m cladding layer thickness, a maximum temperature of ...

1989-06-01

267

Comparison of plasma chemistries for inductively coupled plasma etching of InGaAlP alloys

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for ...

2005-04-18

268

The results of investigations in connection with development of methods for integrated optimization of fast reactors parameters

Two plasma chemistries, i.e., CH{sub 4}/H{sub 2}/Ar and Cl{sub 2}/Ar, were compared for the etching of InGaP, AlInP, and AlGaP under inductively coupled plasma (ICP) conditions. While the etching with CH{sub 4}/H{sub 2}/Ar discharges appears to be ion driven, Cl{sub 2}/Ar discharges showed an additional strong chemical enhancement. The highest etch rate ({approximately}1 {mu}m/min) for InGaP was achieved at high ICP source power ({ge}750 W) with the Cl{sub 2}/Ar chemistry. Cl{sub 2}/Ar discharges provided very smooth surfaces in all three materials with root-mean-square roughness measured by atomic force microscopy around 2 nm. This result may be due to the efficient ion-assisted product desorption in this chemistry. The etched near-surface region of InGaP ({approximately}100 {Angstrom}) with Cl{sub 2}/Ar maintained almost the same stoichiometry as that of the unetched control. By contrast, the CH{sub ...

1998-05-01

269

HTR looking forward to his future with confidence

The results for development of methods and computer programs for integrated optimization of parameters of perspective fast reactors are given. The possibilities of the program for the reactor campaign calculation are analysed. This program is based on utilisation of the Bubnov-Galerkin method and Wigner disturbance theory. The possibility of application of approximation methods for the optimization researches is discussed. The results of development of the programs for complex reactor computations with account of control rods system and change of physical parameters in the reactor campaign are discussed. (author).

1974-07-01

270

Development of breeder reactors in Japan

The days of high-temperature reactors in the Federal Republic of Germany are numbered. The AVR has been decommissioned, and an application has been filed for licensing the decommissioning of the THTR. Nevertheless, Prof. Dr. Rudolf Schulten who is the director of Juelich Nuclear Research Center's Institute for Reactor Development, and also full professor of Aachen Technical University in the field of reactor safety, predicts a good future for the HTR reactor line on a worldwide level, due to the inherent safety of this reactor type. (orig.).

271

The Neutron Radiography Reactor (NRAD)

In the framework of a global analysis of the various available sources of energy, Japan has reserved a prominent place to the nuclear energy, and in the long-term view, to the breeder reactor which will be due for commercial deployment in 2010. To achieve these objectives, three stages are envisaged, one of the experimental reactor Joyo (in service), one of the demonstration reactor Monju (its construction has been decided), and one of the pre-commercial reactor (due to be taken in hand at the beginning of the Nineties). Efforts will be made in parallel concerning the fuel cycle.

1984-01-01

272

Fusion Reactor Radioactive Waste Management.

The Neutron Radiography Reactor (NRAD) operated by Argonne National Laboratory is described in this paper. NRAD was designed to allow radiography of highly absorbing reactor fuel assemblies in the vertical position on the routine basis. 7 figs.

1990-01-01

273

Fast Flux Test Facility Reactor Vessel Removal Study

Quantities and compositions of non-tritium radioactive waste are estimated for some current conceptual fusion reactor designs, and disposal of large amounts of radioactive waste appears necessary. Although the initial radioactivity of fusion reactor and f...

1976-01-01

274

Emergency reactor core cooling device

This study assesses the feasibility of removing the FFTF reactor vessel from its current location in the reactor cavity inside the Containment vessel to a transporter for relocation to a burial pit in the 200 Area.

2002-10-23

275

Designer himself throws light upon high-temperature reactor

The device of the present invention improves reactor safety by suppressing lowering of water level in a shroud which surrounds a reactor core, even upon occurrence of rupture of pipelines in an emergency reactor core cooling system in a recycling pump-incorporated type reactor. Namely, an opening of each of cooling systems which forms the emergency reactor core cooling device in a reactor pressure vessel is disposed above the upper end of the reactor core. Further, it also comprises an independent high pressure water injection system, gravitational dropping type water injection system and an automatic depressurization system. With such a constitution, even if rupture of pipelines in the system should be assumed, coolants never flow directly from the shroud which surrounds the reactor core. In addition, there are no ...

1993-03-16

276

Designer himself throws light upon high-temperature reactor

THe high-temperature reactor is one of the alternatives for the now predominantly employed water-reactors. In a recently published book designer Rudolf Schulten outlines his concept. In this article the book is reviewed. (author). 1 ref.; 1 fig.

1990-04-01

277

THe high-temperature reactor is one of the alternatives for the now predominantly employed water-reactors. In a recently published book designer Rudolf Schulten outlines his concept. In this article the book is reviewed. (author). 1 ref.; 1 fig.

278

CANDU year in review

In vivo and in vitro evaluation of dota-lanreotide radiolabelled with gallium-67

The commissioning of four CANDU-600 reactors is discussed, with mention of some design features. The four are Point Lepreau, Gentilly-2, Wolsung and Cordoba reactors. The commissioning of Pickering-5 is also mentioned, and so are some events affecting other CANDU reactors.

1983-01-01

279

Gallium-67 activated charcoal: a new method for preparation of radioactive capsules for colonic transit study

One of the refinements of modern Nuclear Medicine is the capacity of providing dynamic and kinetics images of the administered radiopharmaceutical, reproducing its transport mechanism, action sites, receptor binding and excretion route. With the continues technological advances new radiopharmaceuticals have been developed in order to express higher specificity and with higher characters of affinity between receptor/complex. One radiopharmaceutical is formed by a reagent or bio molecule that has in its structure a radioisotope, that has the objectives of carrying it to the organs of affinity or to benign or malign tumoral process. Somatostatin inhibits the growing and proliferation of several tumoral cells. Somatostatin analogs bind to somatostatic receptors that are expressed in different kind of neoplasia DOTA-LANREOTIDE (DOTALAN) is an octapeptide analog to somatostatin. The interest of labeling the bio conjugate with gallium-67 in Nuclear Medicine comes from its physical, chemical ...

280

Steady-state neutronic investigations to the accident of water ingress in systems with pebble-bed high-temperature gas-cooled reactor fuel

Indium-111 is currently the radionuclide of choice for colonic transit study. However, it is expensive and not available in many hospitals. Technetium-99m has been proposed for colonic transit study but the short half-life has limited its use. Gallium-67 citrate is inexpensive and available in most countries. Most importantly, it has a suitable half-life for colonic transit study. Attempts have been made in some studies to use {sup 67}Ga citrate to label activated charcoal, but the results have not been good because of poor stability. In this study, we successfully labelled activated charcoal with {sup 67}Ga citrate by adding alcohol and 5% glucose solution. To evaluate the in vitro stability, the {sup 67}Ga-activated charcoal was incubated in a milieu mimicking the intestinal content, containing lipase, trypsin and glycochenodeoxycholate at different pH values (6.0, 7.0, 7.4 and 8.0) and for different durations (0 h, 24 h, ...

2003-06-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

281

HTR looking forward to his future with confidence. An interview with Professor R. Schulten, the father of the high-temperature reactor

For light water reactors, loss of coolant is an important point in safety analysis, whereas for gas-cooled reactors the ingress of water into the core region is an incident of safety relevance. The applicability of the computer code system GAMTEREX to pebble beds of spherical high-temperature gas-cooled reactor fuel elements with simulated water ingress is verified by experiment. The measurements were performed at a Siemens-Argonaut reactor, using its ring core as a driver zone for a pebble-bed core in the center of the reactor.

1987-09-01

282

Formation and decay of secondary actinides in water reactor and fast neutron reactors

The days of high-temperature reactors in the Federal Republic of Germany are numbered. The AVR has been decommissioned, and an application has been filed for licensing the decommissioning of the THTR. Nevertheless, Prof. Dr. Rudolf Schulten who is the director of Juelich Nuclear Research Center's Institute for Reactor Development, and also full professor of Aachen Technical University in the field of reactor safety, predicts a good future for the HTR reactor line on a worldwide level, due to the inherent safety of this reactor type. (orig.).

1989-06-02

283

Evolution of reactivity control mechanisms for nuclear research and power reactors in India

Actinides other than the main uranium or plutonium isotopes take a growing part in the different stages of the nuclear cycle. For the French nuclear power program based on the development of light water reactors and fast breeders, many evaluations of the secondary actinides build up are made for the both reactor types using mainly the existing reactor codes. The comparison of these foreseen compositions with experimental results allows to perform some adjustments of the neutronic data. The secondary actinide compositions are given for some typical fuels and their consequences on the nuclear cycle are discussed. An hypothetical burning of these wastes in fast reactors has been studied and the main conclusions are reported.

284

Characterization of chemical looping combustion of coal in a 1 kW{sub th} reactor with a nickel-based oxygen carrier

Division of Remote Handling and Robotics (DRHR) at Bhabha Atomic Research Centre (BARC) has been working on design and development of Reactivity Control Mechanisms for Nuclear Research Reactors (Dhruva, KAMINI and recently Critical Facility of Advanced Heavy Water Reactor (AHWR)) as well as Power Reactors in India (Pressurized Heavy Water Reactors of 220 MWe at Narora and recently India's first 540 MWe PHWR Unit -1 and 2 at Tarapur). This paper gives a brief account of evolution of reactivity control mechanisms for nuclear research and power reactors in India. (author)

2009-10-01

285

Axiomatic Design Approach for a Reactor Head Structure Assembly

Chemical looping combustion is a novel technology that can be used to meet the demand on energy production without CO{sub 2} emission. To improve CO{sub 2} capture efficiency in the process of chemical looping combustion of coal, a prototype configuration for chemical looping combustion of coal is made in this study. It comprises a fast fluidized bed as an air reactor, a cyclone, a spout-fluid bed as a fuel reactor and a loop-seal. The loop-seal connects the spout-fluid bed with the fast fluidized bed and is fluidized by steam to prevent the contamination of the flue gas between the two reactors. The performance of chemical looping combustion of coal is experimentally investigated with a NiO/Al{sub 2}O{sub 3} oxygen carrier in a 1 kW{sub th} prototype. The experimental results show that the configuration can minimize the amount of residual char entering into the air reactor from the fuel ...

2010-05-15

286

Transient overpower test E8 on FFTF-type low-power irradiated fuel

Korea Atomic Energy Research Institute (KAERI) has been developing the integral reactor. The reactor head structure assembly (RHSA) is the structure installed over the reactor cover. Due to the characteristics of an integral reactor, there are many instrument cables and power cables coming out from the reactor cover and main components. The RHSA provides an interface location to connect these cables from Architecture Engineer (AE) and System Designer (SD). It also prevents a pipe whip and it prohibits instruments from becoming missiles. In this research, the axiomatic design approach for the RHSA is performed.

2006-07-01

287

Small propulsion reactor design based on particle bed reactor concept

... excursions fftf reactor fuel elements lmfbr type reactors reactivity insertions

1975-06-08

288

Reduced activation activities

In this paper Particle Bed Reactor (PBR) designs are discussed which use /sup 233/U and /sup 242m/Am as fissile materials. A constant total power of 100MW is assumed for all reactors in this study. Three broad aspects of these reactors is discussed. First, possible reactor designs are developed, second physics calculations are outlined and discussed and third mass estimates of the various candidates reactors are made. It is concluded that reactors with a specific mass of 1 kg/MW can be envisioned of /sup 233/U is used and approximately a quarter of this value can be achieved if /sup 242m/Am is used. If this power level is increased by increasing the power density lower specific mass values are achievable. The limit will be determined by uncertainties in the thermal-hydraulic analysis. 5 refs., 5 figs., 6 tabs.

1989-01-01

289

Program for personnel protection from oxygen deficiency in a Fast Breeder Reactor Test Facility (FFTF)

Four low activation alloy classes, two austenitic and two ferritic, have been incorporated into the MOTA-1B experiment in the FFTF reactor to provide an early assessment of the suitability of such alloys for reactor service.

1984-01-01

290

Nitride Fuel for Fast Neutron Nuclear Reactors

The FFTF reactor is described. Procedures and equipment used to protect personnel from potential hazards of oxygen deficient environments are described.

1979-12-12

291

MASTER - NASA Technical Reports Server

Development of Technology for Producing High-Effective Nitride Fuel UN with Controlled Microstructure for Advanced Fast Neutron Nuclear Reactors

292

Liquid Metal Fast Breeder Reactor Program Volume IV. Alternative technology options. Environmental statement

Reactor Effluent Purification System. 7.4.3. Filter Reactor Outlet Gas (FROG). 7.5. Instrumentation and Controls for NSS Tests ...

293

Failure location analysis for tagged reactor assemblies

... 1535-DR(Vol.4). Available from INIS in electronic form breeder reactors

1974-01-01

294

FFTF & Advance Reactors Transition Program Resource Loaded Schedule

The location of defective LMFBR fuel pins by the determination of gas tag isotopic ratios is discussed. The application of this method to the FFTF Reactor briefly described.

1979-03-01

295

Alteration of reactor installation (alteration of No.1 and No.2 reactors) in Sendai Power Station, Kyushu Electric Power Co., Inc. (report)

This document is the annual update of the FFTF and Advanced Reactors Transition Program Resource Loaded Schedule for FY 2002 using current project direction and authorized funding levels

2001-10-25

296

Alteration of reactor installation (alteration of No. 1 and No. 2 reactors) in Sendai Power Station, Kyushu Electric Power Co. , Inc. (report)

Published in summary form only.

1990-01-01

297

Actinide transmutation in nuclear reactors

Published in summary form only.

1990-09-01

298

Actinide transmutation in nuclear reactors

Of some interest is the comparison between the actinide nuclide burning up (fission) rates such as americium 241, americium 242, curium 244, and neptunium 237, in the reactors with fast or thermal neutron spectra.

1993-12-31

299

A motor-driven hoisting winch with a safety-braking device

Of some interest is the comparison between the actinide nuclide burning up (fission) rates such as americium 241, americium 242, curium 244, and neptunium 237, in the reactors with fast or thermal neutron spectra.

1992-09-14

300

Uptake of /sup 67/Ga in the lung of mice during bleomycin treatment

... brakes reactor charging machines reactors machine parts Int. Cl. B66d5/00;

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

301

Si and Si/P implants in In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P

Changes of /sup 67/Ga uptake in the lungs and changes of components of the so-called ground substance of the lung connective tissues of mice were followed for 7 weeks after the start of bleomycin (BLM) administration (20 mg/kg body weight IP, twice weekly for 5 weeks; this treatment induced fibrosis of the lung). /sup 67/Ga uptake of the lung was elevated at 1 week, and reached a maximum at 5 weeks (3.00+-0.11% dose/g lung), and then decreased slightly at 7 weeks. The uronic acid content in the 1.2 M NaCl-soluble fraction, which contained predominantly heparan sulfate (HS), was increased at 1 week, peaked at 3 weeks, and then remained unchanged up to 7 weeks. This pattern was similar to that of /sup 67/Ca acumulation in the lungs. The uronic acid content of the 0.4 M NaCl-fraction, which contained predominantly hyaluronic acid (HA), was decreased at 1 week, but increased to a maximum at 3 weeks, then decreased to about the initial level at 5 ...

1984-02-01

302

Shallow Si/Pd-based ohmic contacts to n type Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P

Si and Si/P ion implantation doping of In{sub 0.5}Ga{sub 0.5}P and In{sub 0.5}Al{sub 0.5}P has been studied for several Si and P doses at energies of 90 and 100 keV, respectively. For single Si implants in InGaP a maximum Hall sheet electron concentration of 1.33{times}10{sup 13} cm{sup {minus}2} is achieved for a Si dose of 5{times}10{sup 13} cm{sup {minus}2}. When an optimum dose (2.5{times}10{sup 13} cm{sup {minus}2}) P coimplant is performed this electron concentration is increased by 65{percent}. The same dose Si implants in InAlP show a maximum effective activation of 3.9{percent} with no P coimplantation and 5.2{percent} with a P-implant dose 1.5 times the silicon dose. The apparent donor ionization energies are estimated from variable temperature Hall measurements to be 2{endash}5 meV for InGaP and {approximately}80 meV for InAlP. The deeper level in InAlP is attributed to the DX level found in the Al-containing ...

1996-06-01

303

Quasiparticle band structure of thirteen semiconductors and insulators

Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to n type Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of {approximately} 6 {times} 10{sup {minus}6} {Omega}-cm{sup 2} and {approximately} 1 {times} 10{sup {minus}5} {Omega}-cm{sup 2} have been obtained on Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P respectively (both doped to {approximately} 2 {times} 10{sup 18} cm{sup {minus}3}). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al{sub 0.5}In{sub 0.5}P and n-Ga{sub 0.5}In{sub 0.5}P are presented.

1996-12-31

304

Quasiparticle band structure of thirteen semiconductors and insulators

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al{sub 0.5}Ga{sub 0.5}As and In{sub 0.53}Ga{sub 0.47}As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, {ital E}({Gamma}{sub 1{ital c}}) of AlP, {ital E}({ital L}{sub 1{ital c}}) of AlAs, and {ital E}({ital L}{sub 1{ital c}}) of AlSb are discussed and attributed to various ...

1991-06-15

305

Passivity of polycrystalline NiMnGa alloys for magnetic shape memory applications

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al_0_._5Ga_0_._5As and In_0_._5_3Ga_0_._4_7As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, E(#GAMMA#_1_c) of AlP, E(L_1_c) of AlAs, and E(L_1_c) of AlSb are discussed and attributed to various experimental uncertainties. Several other quasiparticle-excitation-related ...

306

Passivity of polycrystalline NiMnGa alloys for magnetic shape memory applications

The corrosion and passivation behaviour of bulk polycrystalline martensite Ni{sub 50}Mn{sub 30}Ga{sub 20} and austenite Ni{sub 48}Mn{sub 30}Ga{sub 22} alloys was compared in electrolytes with different pH values. Linear anodic and cyclic potentiodynamic polarisation methods and anodic current transient measurements have been conducted for the alloys and their constituents to analyze free corrosion, anodic dissolution and passive layer formation processes. Electrochemically treated alloy surfaces were characterized with scanning electron microscopy (SEM) and angle-resolved x-ray photoelectron spectroscopy (XPS). The electrochemical response of both alloys is in principal similar and is dominated by the Ni oxidation. In acidic solutions (pH 0.5 and 5) a slightly higher reactivity is detectable for the martensitic alloy which is mainly attributed to enhanced dissolution processes at the multiple twin boundaries. In weakly acidic to strongly ...

2009-05-15

307

Optical second-harmonic generation in III-V semiconductors: Detailed formulation and computational results

The corrosion and passivation behaviour of bulk polycrystalline martensite Ni50Mn30Ga20 and austenite Ni48Mn30Ga22 alloys was compared in electrolytes with different pH values. Linear anodic and cyclic potentiodynamic polarisation methods and anodic current transient measurements have been conducted for the alloys and their constituents to analyze free corrosion, anodic dissolution and passive layer formation processes. Electrochemically treated alloy surfaces were characterized with scanning electron microscopy (SEM) and angle-resolved x-ray photoelectron spectroscopy (XPS). The electrochemical response of both alloys is in principal similar and is dominated by the Ni oxidation. In acidic solutions (pH 0.5 and 5) a slightly higher reactivity is detectable for the martensitic alloy which is mainly attributed to enhanced dissolution processes at the multiple twin boundaries. In weakly acidic to strongly alkaline solutions (pH 5-11) both alloys ...

2009-05-01

308

In an earlier paper (Phys. Rev. Lett. 66, 41 (1991)), we calculated both the dielectric constant ({epsilon}{sub {infinity}}) and the nonlinear optical susceptibilities for second-harmonic generation ({chi}{sup (2)}) in the static limit for AlP, AlAs, GaP, and GaAs in the local-density approximation with and without a self-energy correction in the form of a scissors operator,'' including local-field effects. In this paper, we expand our presentation of this calculation. Agreement with experiment to within 15% for the nonlinear susceptibility is demonstrated where experiments are available (GaP and GaAs); the dielectric constants are in no worse than 4% agreement with experiment. The virtual hole'' contributions are reformulated to avoid large numerical cancellations in the case of near degeneracies. The virtual electron'' terms dominate over the ...

1991-12-15

309

Metal contacts to n-GaN

Influence of phosphorus vapor ambient for InGaAsP growth on GaAs substrate

Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 deg. C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current-voltage measurements. It was obtained that annealing resulted in interdiffusion, lateral diffusion along the surface, alloying and bowling up of the metal layers. The current-voltage characteristics of as-deposited Al and Ti/Al contacts were linear, while the Au and Ti/Au contacts exhibited rectifying behaviour. Except the Ti/Au contact which became linear, the contacts degraded during heat treatment at 900 deg. C. The surface of Au and Ti/Au contacts annealed at 900 deg. C have shown fractal-like structures revealed by scanning electron microscopy. Transmission electron microscopy and XRD investigations of the Ti/Au contact revealed that Au diffused into the n-GaN layer at ...

2006-11-15

310

Distributions of "1"3"7Cs, "2"0"1T1, "2"0"3Hg, "2"0"3Pb and "5"7Co in a rat hepatoma model. Comparison with "6"7Ga

For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of ...

1986-12-01

311

A15 superconductors through direct solid-state precipitation: V/sub 3/Ga and Nb/sub 3/Al

The distribution of carrier-free "2"0"3Pb-acetate, "2"0"3HgCl_2, "5"7Cocl_2, "1"3"7CsCl and "2"0"1TlCl was investigated in rats bearing thigh-implanted Morris 7777 hepatomas. Viable and nonviable tumor tissue was collected in order to determine the relative affinities of the radiopharmaceutical for these tissues. The animals were sacrificed at 4, 24, 48, 72 and 96 hrs following intravenous injection. Washout of the radioisotope from the viable tumor tissue was rapid, the maximum concentration being reached on or before 4 hrs following injection. In contrast, residual activity within the nonviable tumor tissue decreased much more slowly and in some cases even increased with time. Viable tumor-to-muscle and nonvialbe tumor-to-muscle ratios for "2"0"3Pb, "2"0"3Hg and "5"7Co were comparable to the analogous ratios reported for "6"7Ga. However, none of these isotopes approached "6"7Ga as a potential tumor imaging agent because the large ratios were ...

312

Boiling water reactors, pressurized water reactors, supercritical water reactors; Reacteurs a eau bouillante, a eau pressurisee, ou a eau supercritique

A solid-state precipitation process was used to prepare superconducting tapes containing an A15 phase, V/sub 3/Ga or Nb/sub 3/Al, in a ductile niobium or vanadium containing BCC matrix. Ingots weighing as large as 30 to 50 gms of V-(14 approx. 19 at. %) Ga and Nb-(13 approx. 22 at. %) Al were prepared by arc-melting, homogenized, quenched, warm-rolled over 99% into tape, and aged at temperatures in the range 600/sup 0/C to 1000/sup 0/C to precipitate the superconducting A15 phase. The features demonstrated by the process are very attractive for practical applications. In the V-Ga system, transmission electron microscopy (TEM) studies revealed the A15 precipitates in an elongated form. However, for the Nb-Al samples, deformed and aged at 750/sup 0/C, TEM studies revealed A15 precipitation in fine equi-axed particles which formed as a semi-continuous network over sub-grain boundaries formed by the recovery of ...

1980-09-01

313

Wide bandgap collector III-V double heterojunction bipolar transistors

This article gives an account of the recent development of light water reactors new concepts in the world. Different projects are being studied. The CE80+ from Combustion Engineering (CE) is a 1350 MWe-PWR-type reactor whose primary circuit is confined in a spherical metallic containment. This reactor was certified by NRC (national regulatory commission) in mid-1996. The APWR (advanced pressurized water reactor) is developed by MHI (Mitsubishi heavy industries) in a collaboration with Westinghouse, this PWR-type reactor fitted with 4 loops derived from the SP90 model that was developed by Westinghouse during the eighties. 2 units of ABWR (advanced boiling water reactor) were commissioned in Japan in 1996 and 1997, ABWR was certified by NRC in mid-1996. The BWR90+ is developed by ABB-atom (Sweden) and it represents a cautious advanced version of the BWR75. ...

2001-07-01

314

Valence-band offsets at the Al{sub x}Ga{sub 0.5{minus}x}In{sub 0.5}P-ZnSe(001) lattice-matched interface

This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the ...

315

The characteristics of ion-beam-induced spontaneous etching of GaAs by low-energy focused ion beam irradiation

The difficulty in making good Ohmic contact at the interfaces with p-doped ZnSe is an important problem hindering the realization of blue-light-emitting diode lasers based on the II-VI semiconductor technology. So far no metal or semiconductor material has been found to have a low enough barrier at the (001) interface with ZnSe. A possible solution to this problem is the insertion of a so-called {ital barrier-reduction layer} at the interface with ZnSe. We have investigated the interface formation energies and valence-band offsets at the (001) interface between Al{sub x}Ga{sub 0.5{minus}x}In{sub 0.5}P and ZnSe. The results of our calculations show the existence of a strong interdependence between the valence-band offset and the interface geometric structure. The interface is found to have structural and electronic similarities to the GaAs-ZnSe(001) system. The very low values obtained for the valence-band offset confirm the possibility of using ...

1997-01-01

316

Strain enhanced electron spin polarization observed in photoemission from InGaAs

We have investigated the characteristics of ion-beam-induced spontaneous etching (IBISE) of GaAs in Cl_2 ambient by using a Ga-focused ion beam (FIB) with an energy ranging from 3 to 15 keV. The etched depth of the irradiated region was more than 20 times greater than that of unirradiated region. When the sputtered depth by FIB irradiation amounted to around 8 A at each ion energy, the etched depth in Cl_2 ambient for 1 hour became saturated. The saturated etched depths were 450, 550, 750 and 800 A at the ion energy of 3, 5, 10 and 15 keV, respectively. The residual damage of the etched surface was also investigated by photoluminescence (PL) measurement. The maximal PL intensity was obtained at around the threshold dose of IBISE and increased with decreasing ion energy. The full recovery of PL intensity was observed at the ion energy of 3 keV after annealing at 400degC. (author).

317

Solid-state amorphization of a quenched high-pressure GaSb phase studied by real-time neutron diffraction: evolution of the crystalline phase

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 #mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x #approx# 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by x-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 #mu#m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first observation of strain-enhanced electron spin ...

1991-05-06

318

Solid-state amorphization of a quenched high-pressure GaSb phase studied by real-time neutron diffraction: evolution of the crystalline phase

The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min{sup -1}. The transformation to the amorphous state begins at 140 K and is completed near room temperature. The {beta}-Sn type structure was shown to represent only the mean lattice of the high-pressure GaSb-II phase. The superstructure of this phase widely varied with temperature and is caused by the ordered displacement of atoms. The temperature range of the metastable crystalline phase relaxation is divided into three intervals according to the temperature dependence of the tetragonality ratio (c/a). At the boundaries of these temperature intervals, i.e. temperatures T = 170 and 230 K, two second-order phase transitions are observed. Anomalous heat and volumetric effects were observed earlier by means of calorimetry ...

2009-01-28

319

Positioning of self-assembled InAs quantum dots by focused ion beam implantation

The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min-1. The transformation to the amorphous state begins at 140 K and is completed near room temperature. The ?-Sn type structure was shown to represent only the mean lattice of the high-pressure GaSb-II phase. The superstructure of this phase widely varied with temperature and is caused by the ordered displacement of atoms. The temperature range of the metastable crystalline phase relaxation is divided into three intervals according to the temperature dependence of the tetragonality ratio (c/a). At the boundaries of these temperature intervals, i.e. temperatures T = 170 and 230 K, two second-order phase transitions are observed. Anomalous heat and volumetric effects were observed earlier by means of calorimetry and ...

2009-01-28

320

Nanoporous structure formations on germanium surfaces by focused ion beam irradiations

Self-assembled quantum dots (QDs) are envisioned as building blocks for realization of novel nanoelectronic devices, for which the site-selective growth is highly desirable. This thesis presents a successful route toward selective positioning of self-assembled InAs QDs on patterned GaAs surface by combination of in situ focused ion beam (FIB) implantation and molecular beam epitaxy (MBE) technology. First, a buffer layer of GaAs was grown by MBE before a square array of holes with a pitch of 1-2 #mu#m was fabricated by FIB implantation of Ga and In, ions respectively. Later, an in-situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by FIB. The influence of ion dose, annealing parameters and InAs amount was investigated in this work. With optimized parameters, more than 50 % single dot occupancy per hole is achieved. Furthermore, the photoluminescence ...

2006-07-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

321

Microstructural evaluation of as-solidified and heat-treated [gamma]-TiAl based powders

The formation of porous structures of nanometre size (nanoporous structures) on germanium (Ge) surfaces by focused ion beam (FIB) irradiations was investigated using various FIB conditions such as ion species, irradiation energies, total fluences, fluence rates, and incident angles. FIB-irradiated regions were observed using a scanning electron microscope and an atomic force microscope. It is found that, using a focused Ga ion beam (Ga FIB) at an energy of 100 keV, the irradiated Ge surface swelled up to ion fluence of 2 x 10"1"7 cm"-"2 with nanoporous structures and then was etched for larger fluences. The shape of swollen nanoporous structures depended on the fluence rate and the incident angle of the Ga FIB. However, such porous structures were observed neither for low-energy (15-30 keV) FIB irradiations using Si and Au ions nor for high-energy (200 keV), heavy ion (Au) irradiation. These observations might be helpful in ...

2007-11-07

322

Luminescence of CaGa2Se4:Eu crystals

Powders with nominal compositions (in atomic percent) Ti-48Al and Ti-48Al-2Nb-2Cr were prepared by the plasma rotating electrode process (PREP) and gas atomization (GA) techniques. As-solidified and heat-treated (1000degC per 3 h) powder samples were examined by metallography, scanning electron microscopy, X-ray diffraction and transmission electron microscopy. The microstructures of the powders were characterized as a function of atomization technique, alloy content, powder particle size (solidification rate) and thermal history. All of the as-solidified powders were comprised of disordered [alpha], and ordered [alpha][sub 2]-Ti[sub 3]Al and [gamma]-TiAl. For both alloys, a larger volume fraction of [alpha] and [alpha][sub 2] was observed in the PREP powders relative to GA powders of comparable size. Additionally, for both alloys and both atomization techniques, the volume fraction of [alpha][sub 2] was observed to increase with decreasing ...

1992-05-15

323

Interface-induced conversion of infrared to visible light at semiconductor interfaces

We have studied photoluminescence and thermoluminescence (PL and TL) in CaGa2Se4:Eu crystals in the temperature range 77-400 K. We have established that broadband photoluminescence with maximum at 571 nm is due to intracenter transitions 4f6 5d-4f7 (8S7/2) of the Eu2+ ions. From the temperature dependence of the intensity (log I-103/T), we determined the activation energy (Ea = 0.04 eV) for thermal quenching of photoluminescence. From the thermoluminescence spectra, we determined the trap depths: 0.31, 0.44, 0.53, 0.59 eV. The lifetime of the excited state 4f6 5d of the Eu2+ ions in the CaGa2Se4 crystal found from the luminescence decay kinetics is 3.8 ?sec. (authors)

324

InP-quantum dots in Al_0_._2_0Ga_0_._8_0InP with different barrier configurations

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al{sub {ital x}}Ga{sub 1{minus}{ital x}}InP{sub 2}; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. {copyright} {ital 1996 The American Physical Society.}

1996-08-01

325

InAIP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasers

Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al_0_._2_0Ga_0_._8_0InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of different barrier configurations as well as the incorporation of additional tunnel barriers on the optical properties has been investigated. The confinement energy between the dot barrier and the surrounding barrier layers, which is the sum of the band discontinuities for the valence and the conduction bands, was chosen to be approximately 190 meV by using Al_0_._5_0Ga_0_._5_0InP. In combination with 2 nm thick AlInP tunnel barriers, the internal quantum efficiency of these barrier configurations can be increased by up to a factor of 20 at elevated temperatures with respect to quantum dots without such layers. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2009-04-01

326

Improved AlGaInP-based red (670--690 nm) surface-emitting lasers with novel C-doped short-cavity epitaxial design

Distributed Bragg reflectors (DBRs) composed of In_0_._5Al_0_._5P/In_0_._5(Al_yGa_1_-_y)_0_._5P quarter-wave layers have been prepared using metalorganic vapor phase epitaxy. The structures were grown over a wide range of high-index layer composition (0#<=#y#<=#0.6) and peak reflectivity wavelength (720 nm#<=##lambda##<=#565 nm, covering the spectrum from deep red to green). In all cases observed and calculated reflectance spectra were in excellent agreement. Using these DBRs, an undoped all-phosphide visible vertical cavity surface-emitting laser structure was grown. Under pulsed optical excitation at room temperature, lasing was obtained at a wavelength of #lambda##approx#670 nm, with a threshold power density comparable to that observed from similar structures prepared using AlAs/AlGaAs DBRs.

327

Generation of ammonia plasma using a helical antenna and nitridation of GaAs surface

A modified epitaxial design leads to straightforward implementation of short (1{lambda}) optical cavities and the use of C as the sole {ital p}-type dopant in AlGaInP/AlGaAs red vertical-cavity surface-emitting lasers (VCSELs). Red VCSELs fabricated into simple etched air posts operate continuous wave at room temperature at wavelengths between 670 and 690 nm, with a peak output power as high as 2.4 mW at 690 nm, threshold voltage of 2.2 V, and peak wallplug efficiency of 9%. These values are all significant improvements over previous results achieved in the same geometry with an extended optical cavity epitaxial design. The improved performance is due primarily to reduced optical losses and improved current constriction and dopant stability. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

1995-07-17

328

Using the ammonia (NH3) plasma generated by a helical antenna surrounded by two magnetic coils, the transition of the discharge mode from low-density plasma to high-density one was observed. At the transition, the emission intensities from the H atoms and NH radicals especially increased in the optical emission spectroscopy, while the intensities of the other emission lines also increased abruptly. The nitridation of gallium arsenide (GaAs) surface was performed using the high-density NH3 plasma, and the properties of the nitrided surface layer were compared with those nitrided by high-density N2 plasma using the same apparatus. From the spectroscopic ellipsometry measurements, the thickness of the nitrided layer was estimated to be 16-18 nm, while that by N2 was 3-4 nm. From the Ga 3d spectra, the contamination with oxygen in the nitridation layer by NH3 plasma was less than that by N2 plasma.

2003-05-15

329

GaInP high-power lasers

Direct detection optical intersatellite link at 220 Mbps using AlGaAs laser diode and silicon APD with 4-ary PPM signaling

The following work deals with the realization, characterization and modeling of GaInP / AlGaInP high power semiconductor laser diodes in the visible wavelength range. In addition to the exploration and optimization of efficiency, temperature stability and maximum output power of multi-mode lasers especially methods for longitudinal and lateral mode stabilization of high power laser diodes have been investigated. Although often the focus of optimization is on the threshold current density, in this work the performance of the laser diode for an operation point around 1 Watt under continous wave operation is regarded as the figure of merit. It turns out that low carrier densities are key for an efficient reduction of the heterobarrier leakage currents. In addition, large optical cavity structures with low internal losses enable high external quantum efficiencies even for long cavities. Finally high laser effiency as well as an efficient cooling ...

330

Detection of abnormalities in febrile AIDS patients with In-111-labeled leukocyte and Ga-67 scintigraphy

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor ...

1990-03-01

331

Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

Thirty-six patients with acquired immunodeficiency syndrome (AIDS), who were febrile but without localizing signs, underwent indium-111 leukocyte scintigraphy 24 hours after injection of labeled white blood cells (WBCs) and were restudied 48 hours after injection of gallium-67 citrate. Fifty-six abnormalities were identified as possible sources of the fever; 27 were confirmed with biopsy. Of these 27, 15 were identified only on In-111 WBC scans (including colitis, sinusitis, and focal bacterial pneumonia); six, only on Ga-67 scans (predominantly Pneumocystis carinii pneumonia and lymphadenopathy); and six, on both studies (predominantly pulmonary lesions). In-111 WBC scanning revealed 21 of 27 abnormalities (78%) and gallium scanning, 12 of 27 (44%). If only one scintigraphic study has been performed, particularly with Ga-67, a significant number of lesions would not have been detected. The authors believe radionuclide evaluation of the febrile ...

332

0--30 keV low-energy focused ion beam system

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of approx 1nA and a ...

2002-01-01

333

0--30 keV low-energy focused ion beam system

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga/sup +/ ion beams <0.3 ..mu..m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga/sup +/ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

1988-05-01

334

Stochastic Kalman filtration as a method for predicting resource of steam generator pipes

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

335

Some methodological aspects of investigations into radiation hardening of WWER-type reactor vessels

... p. SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS algorithms

336

SODIUM HEAT PIPE MODULE TEST FOR SAFE-30 REACTOR PROTOTYPE

Short communication.

1992-10-27

337

Procedure for operating reactors

No abstract prepared.

2000-10-01

338

Newly developed control and stop valves

The invention concerns a procedure for operating reactors in nuclear power plants. It aims at utilizing power reserves in nuclear power plants. This can be achieved by a steam-side connection of the steam generators of two reactors. The amount of steam exchanged between the units is chosen in such a way that power changes at the steam turbines feedback mainly to the corresponding reactor. In order to realize a high power transfer it is necessary to return the amount of condensate produced in the steam receiving unit and corresponding to the power transferred to the feedwater system of the steam donating unit.

1985-11-11

339

Linear Analysis of the In-Phase and Out-of-Phase Stability Behavior of a Natural Circulation Reactor: Upscaling Effects

... bwr type reactors closures fluidic control devices operation performance pwr

340

Instrumentation and control improvements at Experimental Breeder Reactor II

Not Available

2007-02-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

341

Instrumentation and control improvements at Experimental Breeder Reactor II

The purpose of this paper is to describe instrumentation and control (I C) system improvements at Experimental Breeder Reactor 11 (EBR-11). The improvements are focused on three objectives; to keep the reactor and balance of plant (BOP) I C systems at a high level of reliability, to provide diagnostic systems that can provide accurate information needed for analysis of fuel performance, and to provide systems that will be prototypic of I C systems of the next generation of liquid metal reactor (LMR) plants.

1993-01-01

342

Influence of production technology and irradiation conditions on radiation hardening of reactor vessel steels

The purpose of this paper is to describe instrumentation and control (I&C) system improvements at Experimental Breeder Reactor 11 (EBR-11). The improvements are focused on three objectives; to keep the reactor and balance of plant (BOP) I&C systems at a high level of reliability, to provide diagnostic systems that can provide accurate information needed for analysis of fuel performance, and to provide systems that will be prototypic of I&C systems of the next generation of liquid metal reactor (LMR) plants.

1993-03-01

343

Hydrolysis of Olive Oil Catalyzed by Surfactant-Coated Candida rugosa Lipase in a Hollow Fiber Membrane Reactor

Short communication.

1992-10-27

344

Hydroliquefaction of Australian coals - continuous reactor studies on bituminous coals

Full Text Available

2007-04-01

345

Hydrogen production for better nuclear utilization

Results of tests on the 1 kg/h continuous reactor for the hydroliquefaction of coal are described. The reactor was operated at 415-435 C and 21 MPa using a continuous stirred reactor with a retention time of about 2 hours. All product oils were recovered by distillation. Sub-bituminous coal was found to give the best product yield. Tests using 5% red mud and 3% improved red mud showed significant increases in oil yield. (4 refs.)

1981-01-01

346

Formation and role of the community for water chemistry engineering in Japan

... no. 2) p. 27-28. economics hydrogen power reactors nonmetals (ELEMENTS

1972-08-22

347

Fluidic programmer for nuclear engine application

... 1343-3563 v. 57(1) SPECIFIC NUCLEAR REACTORS AND ASSOCIATED

2011-01-01

348

Fission fragment rockets: A new frontier

... fluidic control devices performance reactor control systems space propulsion

349

FFTF driver fuel pellets: typical pellet lot data

A new reactor concept is described which would enable fission fragments to be continuously extracted from the reactor. Such a reactor has the potential of enabling extremely energetic and ambitious deep space missions. In this talk the basic physics issues involved in the operation of this type of reactor are outlined, and some possible applications to space exploration are described. 3 refs., 2 figs., 3 tabs.

1989-04-01

350

Quality assurance data for FFTF reactor fuel pellets are presented.

351

FFTF and the ASME Code

Eddy-Current Probe-Type Sodium Flowsensor for FFTF Reactor Fuel Channel Flow Monitoring

Photographs are presented of the FFTF reactor facility, components, and some materials.

1978-01-01

352

Development of a dual serial-parallel multiphase CFD code for application to industrial combustor/reactor systems.

Not Available

1971-01-01

353

Determination of reactor kinetic parameters in a two-core reactor

No abstract prepared.

2000-05-16

354

Computer based training cost-benefit model

The kinetic parameters, ..cap alpha.. the coupling coefficient and tau-bar the mean neutron transit time have been determined using a reactor oscillator on the coupled-core of the Queen Mary College research reactor. By using correlation techniques it has proved possible to use detectors small enough to be inserted in the fuel tanks. It is shown that the simplified Baldwin model with one-group diffusion theory is inadequate to describe the kinetic behaviour and the experimentally-determined parameters are dependent upon the positioning of the detectors.

1982-01-01

355

Ceramic Composite Materials

The costs of establishing a computer-based training program for FFTF reactor operators are analyzed.

1984-01-01

356

Calibration of reference thermal and epithermal neutron flux densities from the GLEEP reactor at AERE Harwell

Development of Ceramic Composite Materials and Structural Elements for High-Temperature Nuclear Reactors

357

Breeder Reactor Program: base technology

Not Available

1979-09-01

358

Application of Continuous Stirred Tank Reactor Model for Water Quality Control and Management in Wetland Treatment

Nineteen presentation summaries in this meeting proceedings are individually title listed. (LEW)

1981-01-01

359

An experimental plan for improvement of failed fuel monitoring system in CANDU reactor

Full Text Available

2008-03-01

360

Positive safety features of US nuclear reactors: technical lessons confirmed at Chernobyl. Hearing before the Subcommittee on Energy Research and Production of the Committee on Science and Technology, US House of Representatives, Ninety-Ninth Congress, Second Session, May 14, 1986, No. 138

An experimental plan for improving the problems of failed fuel location system in Wolsung Unit-2 reactors was established. It is not possible to make an experiment on the failed fuel monitoring nuclides in the cold laboratories because they have very short half life. Therefore, the experiments can be only carried out at the existing monitoring system under reactor operation. For that reason, an experimental plan was drawn up for installing the radiation detection system on reactor site.

2003-10-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

361

Positive safety features of US nuclear reactors: technical lessons confirmed at Chernobyl. Hearing before the Subcommittee on Energy Research and Production of the Committee on Science and Technology, US House of Representatives, Ninety-Ninth Congress, Second Session, May 14, 1986, No. 138

Dr. Rudolf Schulten of West Germany and expert witnesses from national laboratories, utilities, and the nuclear industry testified on reactor safety issues as they relate to the Chernobyl accident and public concern that modern technology has not paid enough attention to public safety. Each of the witnesses contributed safety-related information based on what has been learned from the Soviet incident. Particular focus went to similarities and differences between the Chernobyl and US reactors in safety design and engineering and to the environmental effects of the accident. The N reactor near Richland and a commercial reactor at Fort St. Vrain, Colorado are the only two operating graphite reactors, but neither is a boiling water reactor.

1986-01-01

362

Recent developments in the design of conceptual fusion reactors

Dr. Rudolf Schulten of West Germany and expert witnesses from national laboratories, utilities, and the nuclear industry testified on reactor safety issues as they relate to the Chernobyl accident and public concern that modern technology has not paid enough attention to public safety. Each of the witnesses contributed safety-related information based on what has been learned from the Soviet incident. Particular focus went to similarities and differences between the Chernobyl and US reactors in safety design and engineering and to the environmental effects of the accident. The N reactor near Richland and a commercial reactor at Fort St. Vrain, Colorado are the only two operating graphite reactors, but neither is a boiling water reactor.

363

X-ray dosimetry of TlGaSe_2 single crystals

Since the first round of conceptual fusion reactor designs in 1973 - 1974, there has been considerable progress in design improvement. Two recent tokamak designs of the Wisconsin and Culham groups, with increased plasma beta and wall loading (power density), lead to more compact reactors with easier maintenance. The Reference Theta-Pinch Reactor has undergone considerable upgrading in the design of the first wall insulator and blanket. In addition, a conceptual homopolar energy storage and transfer system has been designed. In the case of the mirror reactor, there are design changes toward improved modular construction and ease of handling, as well as improved direct converters. Conceptual designs of toroidal-multiple-mirror, liner-compression, and reverse-field pinch reactors are also discussed. A design is presented of a toroidal multiple-mirror reactor that ...

364

The study of the ion beam induced swelling in crystalline germanium irradiated by a 30 keV Ga"+ focused ion beam

TlGaSe_2 compound belongs to group of layered semiconductors of A"3B"3C_2"6-type. Photoelectric and optical properties of TlGaSe_2 single crystals were investigated in detail. Influence of gamma-, electron and neutron radiation on photoelectric properties of TlGaSe_2 single crystals is investigated too. The present work deals with experimental results relative to X-ray dosimetric characteristics of TlGaSe_2 crystals at 300 K. X-ray conductivity and X-ray dosimetric characteristic measurements are carried out in low load resistance regime. The source of X-ray radiation is the installation of X-ray diffraction analysis (URS-55a) with the BCV-2(Cu). Intensity of X-ray radiation (E) is regulated by measurement with current variation in tube at each given value of X-ray radiation dose E (R/min) are measured by crystal dosimeter DRGZ-02. X-ray conductivity coefficients K_#sigma# characterising X-ray ...

365

Temperature-dependent characteristics and single-mode performance of AlGaInP-based 670--690-nm vertical-cavity surface-emitting lasers

The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.

2005-11-20

366

Technology of GaAs metal-oxide-semiconductor solar cells

The authors report on temperature dependent characteristics and single mode performance of one-wave cavity, planar implanted, AlGaInP-based vertical-cavity surface emitting lasers. By optimizing the overlap between the gain peak and the cavity mode of the structure, they demonstrate record device performance, including 8.2 mW maximum output power and 11% power conversion efficiency for multimode operation and 1.9 mW and 9.6% power conversion efficiency for single mode operation at 687 nm. Improved performance at elevated temperatures is also achieved, with 1.5 mW output power demonstrated at 50 C from a 15-{micro}m-diameter device.

1995-07-01

367

Structural and spectroscopic behaviour of YSr{sub 2}Cu{sub 3-x}M{sub x}O{sub 7{+-}y} phases with M=Ti,Fe,Co,Al,Ga,Pb

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

1977-01-01

368

Stability of A-15 compounds in multifilamentary superconducting wires

A number of materials of composition YSr{sub 2}Cu{sub 3-x}MxO{sub 7{+-}y} with M = Ti, Fe, Co, Al, Ga and Pb were prepared by solid state reactions. They belong to the tetragonal P4/mmm space group and their unit cell parameters were determined and refined from X-ray powder data. The infrared spectra of the compounds were also recorded and are briefly discussed on the basis of their structural characteristics and by comparison with those of related materials. (orig.) 23 refs.

1998-12-01

369

Radiation damage in A-15 materials: EXAFS studies

With the preeminence of A-15 superconducting multifilamentary wires in magnet technology, it has become important to understand the thermodynamic factors influencing the formation of these compounds under solid-state reaction conditions. The six systems Nb--Sn, Nb--Ga, Nb--Ge, Nb--Al, V--Si, and V--Ga were prepared as single filament bronze wires and heat treated in an attempt to precipitate the appropriate A-15 compound. The compounds observed to form were categorized using a formation temperature ratio (stability index) based on the melting temperatures of the constituents which make up the single filament composites. This study has led to several predictions regarding the formation of A-15 compounds using a solid-state bronze diffusion technique. The results of experimentation based on these predictions are presented.

370

Pressure and temperature tuning of InGaP/AlGaInP laser diodes from red to yellow

EXAFS measurements are useful in determining the local atomic environment of a particular element in a solid. Since there has been some controversy about the nature of the defects produced in A-15 materials by radiation damage, such studies were carried out on some A-15 compounds, V_3Ga which was damaged by neutrons, as well as Nb_3Ge damaged by 2.5 MeV a particles. In the V_3Ga sample, site exchange disorder seems to be the most important result of the neutron damage with less than 20% of the vanadium atoms on wrong sites. However, in the Nb_3Ge samples in addition to site exchange disorder, an unusual splitting of the first near-neighbor distance between the Ge and Nb is found. This splitting, approximately 0.2 A, may explain the large Debye Waller factors observed by Burbank et al.

371

New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1990--31 July 1991

Red laser diodes emitting at 636 nm and 645 nm are studied as a function of pressure up to 20 kbar and temperature from 300 K down to 80 K. The 636 nm samples reveal anomalous L-I-V dependence at low temperatures and at high pressures. The 645 nm samples do not show these anomalies and can be tuned by pressure and temperature down to 575 nm, i.e., in the 70 nm range with powers above 200 mW and low threshold currents. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2009-03-15

372

New III-V cell design approaches for very high efficiency

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

1993-01-01

373

Microprobe RBS analysis of localized processed areas by FIB etching and deposition

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

1993-01-01

374

Integrated optoelectronic materials and circuits for optical interconnects

Localized beam-processed areas using chemical reactions induced by a 30 keV Ga"+ focused ion beam (FIB) with and without I_2 (etching) and (CH_3)_3CH_3C_5H_5Pt gases (Pt deposition) have been analyzed using a 300 keV Be"2"+ microprobe with a beam spot size of 50-80 nm. The analyzed results have been compared with energy dispersive X-ray (EDX) analysis using an electron beam. The EDX analysis only indicated incorporated impurities at high fluence such as Ga, Pt and C, while microprobe RBS analysis could detect residual iodine with low concentration which couldn't be detected by EDS analysis because of the lower sensitivity of the EDX analysis for heavy atoms.

2001-07-01

375

Improved Output Power of GaN-Based Vertical Light Emitting Diodes Fabricated with Current Blocking Region Formed by O2 Plasma Treatment

Conventional interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high speed silicon and GaAs based technologies. In recent years clock speeds and on-chip density for VLSI/VHSIC technology has made packaging these high speed chips extremely difficult. A strong case can be made for using optical interconnects for on-chip/on-wafer, chip-to-chip and board-to-board high speed communications. GaAs integrated optoelectronic circuits (IOC's) are being developed in a number of laboratories for performing Input/Output functions at all levels. In this paper integrated optoelectronic materials, electronics and optoelectronic devices are presented. IOC's are examined from the standpoint of what it takes to fabricate the devices and what performance can be expected.

376

III-phosphides heterojunction solar cell interface properties from admittance spectroscopy

We report on the formation of current blocking regions by O2 plasma treatment to reduce current crowding at the active region above the p-type electrodes of GaN-based vertical light emitting diodes (LEDs). The forward voltage and reverse current (at -5 V) of the plasma-treated LEDs slightly increase with increasing aging time. The output power (at 350 mA) of the plasma-treated LEDs is enhanced by 26% as compared to that of reference LEDs and is comparable to that of LEDs with SiO2 current blocking layers. It is shown that the output power (at 700 mA) of the plasma-treated LEDs is degraded by less than 2% of the initial value after 500 h.

2011-07-01

377

Hydrogenation-defined stripe-geometry In sub 0. 5 (Al sub x Ga sub 1 minus x ) sub 0. 5 P quantum-well lasers

GaInP solar cell interfaces were characterized by admittance spectroscopy. Admittance spectroscopy is shown to be sensitive to the band structure at the heterojunction interfaces. In particular, a correlation between activation energy of the capacitance step in a capacitance versus temperature plot and effective potential barrier for majority carriers is demonstrated, indicating a new method for the determination of potential barriers at heterointerfaces. Using this technique, the effective potential barrier for holes at the p-Al_0_._5_3In_0_._4_7P/p-GaAs interface is found to be equal to 0.6 eV. Effects of interface defects and spreading resistance in the emitter of solar cells are illustrated and discussed.

2009-08-21

378

Hydrogenation-defined stripe-geometry In sub 0. 5 (Al sub x Ga sub 1 minus x ) sub 0. 5 P quantum-well lasers

Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In{sub 0.5}(Al{sub {ital x}}Ga{sub 1{minus}{ital x}}){sub 0.5}P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.

1990-12-01

379

High-temperature hysteretic electronic effects of (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P (x > 0.65)

Data are presented on the continuous-wave (cw), room-temperature (300 K) operation of stripe-geometry In{sub 0.5}(Al{sub {ital x}}Ga{sub 1{minus}{ital x}}){sub 0.5}P quantum-well heterostructure lasers defined via hydrogenation. Passivation of the Zn acceptors in the cap and upper confining layer provides gain guiding, and elimination of the current-blocking oxide reduces the thermal impedance. The resultant device is capable of better performance than conventional oxide-stripe diodes fabricated on the same material.

1990-12-01

380

High-temperature hysteretic electronic effects of (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P (x > 0.65)

The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.

2000-02-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

381

High-power operation of heterobarrier blocking structure InGaAlP visible light laser diodes

The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.

2000-02-01

382

Feasibility investigations of growing and characterizing gallium arsenide crystals in ribbon form. Quarterly progress report 1 Jan-31 Mar 1975

Heterobarrier blocking structure InGaAlP visible light laser diodes employing a thin active layer (0.04 {mu}m) and asymmetry coatings have been fabricated. The high light-output power operation with this heterobarrier blocking structure was investigated. The light-output power versus cw current curve was linear up to 43 mW and a maximum light output power of 51 mW was obtained. A high-power operation such as 20 mW was maintained at 40 {degree}C. Stable oscillation in the fundamental transverse mode was obtained up to 30 mW. These results show that this heterobarrier blocking structure supplies a sufficient current confinement effect even under a high-light output power operation.

1990-04-30

383

Fault diagnosis on bottle filling plant using genetic-based neural network

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

384

British Library Electronic Table of Contents (United Kingdom)

Timely detection of the pneumatic system problems is important in industry. Many techniques have been employed to solve this problem. In this paper, Genetic Algorithm (GA) based optimal configuration of neural networks is proposed for fault diagnostic of bottle filling systems. Back-propagation is used for neural networks algorithm. The back-propagation algorithm had six inputs and one output. A fitness function was designed to the minimize execution time of ANN model by keeping the number of hidden layer(s) and nodes as low as possible while the mean square error of estimated output error is minimized. The designed GA-ANN combination and the graphical user interface (GUI) eliminate the trial and error process for selection of the fastest and most accurate configuration. The performance of...

2011-01-01

385

Design of recurrent neural network power system stabilizer based on genetic algorithm

Design of a GaAs/Ge solar array for unmanned aerial vehicles

A new recurrent neural network power system stabilizer (RNNPSS) based on genetic algorithm (GA) was presented. It shows faster convergence than the linear quadratic regulator (LQR) stabilizer in a multi-machine power system, because the proposed GA based neural network was first trained off-line to determine the optimal values of the learning rates. Otherwise, the RNNPSS consists of just two layers. As such, the time consumption of the damping oscillations is lower than with conventional methods. In addition, the operating range of the RNNPSS is greater than that of the LQR and conventional three layer neural networks, since the RNNPSS can greatly reduce system complexity and effectively damp system oscillations. 9 refs., 7 figs.

2008-07-01

386

DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants

Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

1995-03-01

387

DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants

A static plasma grating has been demonstrated experimentally in a large optical cavity FIB-DBR GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam (FIB). The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimization of the laser design is developed and presented here. The computed results show that /kappa/ can be increased by more than an order of magnitude over the 15 cm/sup -1/ experimentally. Therefore, FIB-DBR (or -DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.

1989-06-01

388

Crystal Field Studies on MgGa2O4:Ni2+

A static plasma grating has been demonstrated experimentally in a large optical cavity FIB-DBR GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam (FIB). The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimization of the laser design is developed and presented here. The computed results show that #kappa# can be increased by more than an order of magnitude over the 15 cm"-"1 experimentally. Therefore, FIB-DBR (or -DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.

389

Characterisation of hole traps in GaAs Fets by DLTS, low frequency noise and g sub M dispersion methods

The energy levels scheme of octahedrally coordinated Ni2+ ion in single crystal, powder nano-single crystal, ceramics and glass-ceramics of MgGa2O4 host matrix, has been calculated in the exchange charge model of crystal field. The parameters of the crystal field acting on the Ni2+ ion are calculated from the crystal structure data, after optimization of the geometry of the system. The energy level schemes have been calculated by diagonalization of the crystal field Hamiltonian of this system. The obtained results were compared with experimental data; a good agreement were demonstrated, which confirm the validity of the model and used method.

2010-08-04

390

Buried-heterostructure semiconductor Raman laser with threshold pump power less than 1 W

Deep level effects in GaAs MOSFET have been characterised in the ohmic channel using DLTS, low frequency excess noise and dispersion technique. An isothermal multi exponential curve fitting method has been devised and implanted into the DLTS system. Multi exponential curve fitting method used to decompose a multi exponential transient into its constituents so that the peak signature can be better characterised for the case whereas several peaks are closely spaced. Low frequency excess noise and dispersion techniques also confirm the trap in signature of the same traps observed in the DLTS measurements. (author)

391

Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures

The low-power operation of a semiconductor buried-heterostructure Raman laser is reported. We are developing these devices for very wide-band optical communication in the terahertz frequency region. It has a structure with a GaP active layer and Al{sub {ital x}}Ga{sub 1{minus}{ital x}}P cladding layers, which are grown by the temperature-difference method under controlled vapor pressure. By making the stripe width 30--40 {mu}m, we have obtained a threshold pump power of 500 mW. A low-threshold semiconductor Raman laser can be pumped by semiconductor injection lasers. We have measured the optical loss of the waveguide and detected the contribution from scattering and leakage at heterointerfaces.

1989-12-01

392

Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

1975-01-01

393

A model for Schottky-barrier solar cell analysis

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

394

A final report for: Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

A general model for the analysis of metal-semiconductor solar cells is presented. The model takes into account the cell optical properties, carrier recombination effects, semiconductor minority-carrier properties, series resistance, cell thickness, and active surface area. Numerical methods are used to solve the appropriate continuity equations and hence compute the photocurrent density under AMO conditions. The operation of the model is demonstrated using p- and n-type Si and GaAs with Au being taken as the barrier metal. Calculations are presented showing the effect on solar energy conversion efficiency of surface recombination velocity, barrier height, minority-carrier lifetime, barrier metal thickness, collecting grid configuration, and cell thickness. A comparison of practical and computed data for the Au/n-GaAs system yields good agreement. (AIP)

1976-05-01

395

Preliminary reactor cavity melt dispersal model for direct containment heating scenarios

This SBIR Phase I developed neutron detectors made from gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the front surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed from a layer of Al{sub x}Ga{sub 1-x}As. Schottky-barrier diodes formed from the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron ...

1999-04-01

396

Nuclear reactor with external structure cooling by natural convection

This paper presents the results of a series of experiments performed to study the effect of initial pressure vessel conditions on the extent of melt dispersal from scaled reactor cavities and describes progress in development of a mathematical model which is designed to predict the melt mass dispersed from reactor cavities as a function of reactor vessel initial conditions and on the vessel breach area. The model, which is being developed to also characterize the heat transfer and chemical reaction phenomena which would take place within the reactor cavity, is designed to be incorporated into a lumped-parameter containment analysis computer code.

1989-01-01

397

Leak sealing on ancillary cooling circuits of CANDU reactors

The invention concerns an integrated nuclear reactor comprising natural convection cooling of the supporting skirt on which rests the shield closing the reactor vessel. Cooling is achieved by making the air circulate from the bottom to the top around the skirt and removing this air by a stack. The air can be atmospheric air or air taken from the low parts of the reactor. In the latter case, the stack emerges near a metal roof releasing its heat to the atmosphere by radiation, the air then dropping to the low parts. Application to fast nuclear reactors.

398

Irradiation studies of fusion reactor materials utilizing FFTF/MOTA

This paper discusses the remote plugging of leaks in inaccessible pipework, with main reference to small leaks which frequently appear in ancillary cooling water circuits of nuclear reactors. Initially developed to cure problems of the pre-stressed concrete pressure vessels of UK reactors, the ZORIC sealant has been used to repair leaking biological shield pipework on six CANDU reactors. ZORIC is based on a water-soluble epoxy resin and an aqueous suspension of a refined mineral clay. This paper describes the evolution of the sealant, the qualification and testing program, and their application to CANDU reactor systems. 2 refs., 6 figs.

1992-11-22

399

Assessment of RELAP5 model for the University of Massachusetts Lowell research reactor

The most important and difficult part of materials research for fusion reactor is realized to be irradiation studies of fusion reactor materials. Irradiation studies of fusion reactor materials utilizing FFTF/MOTA, as one of Japan/U.S.A. Fusion Collaboration Programs, have important role to establish fundamental understanding of heavy irradiation effects on materials behavior and properties and to develop methods and technologies for advanced irradiation studies under fusion reactor environment. This paper briefly reviews the history, the state of the art, and the future of the FFTF/MOTA program. (author).

400

RELAP5 (Reactor Excursion and Leak Analysis Program) is a system code developed at the Idaho National Environmental and Engineering Laboratory for thermal hydraulic analysis of nuclear reactors. The code RELAP5 is widely used for safety analysis studies of commercial nuclear power plants. However, recent released version of RELAP5/3.2 and over present significant capabilities for analysis of nuclear reactor research systems. As a contribution to the assessment of RELAP5/3.3 for research reactor safety analysis, experimental data from the University of Massachusetts Lowell Research Reactor UMLRR are used. The UMLRR is a 1 MW, light water moderated and cooled, graphite-reflected, open-pool type research reactor. This paper presents the development and the validation of a UMLRR-RELAP model using experimental data. For this purpose, a series of experiments were ...

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

401

lla5066q.190

Visible semiconductor laser operation below 640 nm at room temperature

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402

The polarized electron gun for the SLC

Recent progress with the (Al_xGa_1_-_x)_0_._5In_0_._5P alloy system has resulted in laser diodes which operate at room temperature at wavelengths below 640 nm. OMVPE is used to grow the multi-quantum-well devices in a graded-index separate-confinement configuration. Laser threshold currents as low as 75 mA have been achieved.

1988-11-02

403

Temperature dependence of the performance of ultraviolet detectors

A new polarized electron gun for use on the SLC at SLAC has been built and tested. It is a diode gun with a laser driven GaAs photocathode. It is designed to provide short (2ns) pulses of 10 A at 160 kV at 120 Hz. The design features of the gun and results from a testing program on a new and dedicated beam line are presented. Early results from operation on the SLC will also be shown.

1992-03-24

404

Temperature dependence of the performance of ultraviolet detectors

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the ...

2003-08-21

405

Study of GaSb+Bi system by proton backscattering method

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the ...

2003-08-21

406

The thermal stability of diffusion barriers is explored on the basis of Bi films at different expedients of deriving of films. The examinations were conducted on the electrostatic accelerator at KNU of name Karazin V.N. under conditions of an isothermal bakeout directly under a proton beam of 1,85 MeV energy.

407

Solar cells

Serum Globotriaosylceramide Assay as a Screening Test for Fabry Disease in Patients with ESRD on Maintenance Dialysis in Korea

The article is the second part of a review dealing with latest developments in the area of solar cell technologies and application. Physical principles, design and efficiency as well as advantages and disadvantages of GaAs- and CdS-solar cells are described. Power generation solar cell systems with voltage converters, combined solar cell/solar collector systems and thermoelectric solar systems are presented in the second part of the article.

1983-04-01

408

MOVPE of (AlGaIn)P under the carrier gas nitrogen for LED structures

Background/AimsFabry disease is an X-linked recessive and progressive disease caused by α-galactosidase A (α-GaL A) deficiency. We sought to assess the prevalence...Full Text Available

2010-12-01

409

Low Birth Weight, Very Low Birth Weight Rates and Gestational Age-Specific Birth Weight Distribution of Korean Newborn Infants

This thesis dealt with the metal-organic gas phase epitaxy with nitrogen as carrier gas. For this first by means of three-dimensional modelings of the epitaxy process the influence of the carrier gas on the processes was explained. The optimization of the growth parameter for the whole light-emitting-diode structure in double-hetero arrangement resulted that an a temperature of 770 C and a V/ III-ratio of 150 layers with a high crystal quality could be reached.

410

Investigation of radiation defects in solids using the EXAFS method

To obtain the low birth weight (LBW) rate, the very low birth weight (VLBW) rate, and gestational age (GA)-specific birth weight distribution based on a large population in Korea, we collected and analyzed...Full Text Available

2005-04-01

411

High-temperature ferromagnetism in laser-deposited layers of silicon and germanium doped with manganese or iron impurities

The exafs method is proposed as a more informative, universal one to investigate the radiation defects in solids. The successful results as obtained by the author using the synchrotron radiation source are reported for the first time. The measurements were carried out in GaAsP crystals irradiated with 50 MeV electrons.

1978-02-15

412

High-power (1. 4 W) AlGaInP graded-index separate confinement heterostructure visible (lambdaapprox. 658 nm) laser

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to ...

2009-04-15

413

Growth and electronic properties of two-dimensional systems on (110) oriented GaAs

Pulsed operation of an AlGaInP graded-index separate confinement heterostructure laser grown by organometallic vapor phase epitaxy is reported. The laser active region consists of a single 100 A Ga/sub 0.5/In/sub 0.5/P quantum well and 1600 A graded index regions on both sides of the well. The graded index regions were produced by lattice-matched graded composition (Al/sub y/Ga/sub 1-//sub y/)/sub 0.5/In/sub 0.5/P quaternary alloys. This structure reduces the broad-area threshold current compared to a double heterostructure laser, with pulsed thresholds as low as 1050 A/cm/sup 2/. Total pulsed power of 1.4 W at 658 nm is available from an 80 ..mu..m x 300 ..mu..m mesa-stripe laser. A differential quantum efficiency of approx.56% is measured. By examining the cavity length dependence of the threshold current density and quantum efficiency, it is apparent that the quantum well gain has not saturated in these structures. This ...

1987-11-23

414

Granitoid formation is ineffective in isotopically homogenizing continental crust: Evidence from archean rocks of the Wind River Mountains, Wyoming

As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type ...

2005-07-01

415

Electric-field dependence of electroreflectance and photocurrent spectra at visible wavelengths in MOVPE-grown InAlGaP multiple strained quantum-well structures

The Archean core of the Laramide Wind River uplift records evidence of at least three major granitoid-forming episodes. The oldest, the Dry Creek gneiss (DCG), was emplaced by 2.8 Ga and occupies the northeastern part of the range. Mafic, pelitic and ultramafic inclusions occur in the DCG. Elsewhere in the Wind River Mountains there is evidence for crustal components as old as 3.8 Ga. The Bridger batholith (BB), intruded at 2.67 Ga, is found in the west-central Wind River Mountains. The Wind River batholith (WRB) refers to the youngest Late Archean granodiorites and granites which are found throughout the range and includes granitoids previously name the Louis Lake, Bears Ears, Popo Agie, and Middle Mountain intrusions. Although granitoids of the Wind River batholith have been dated at 2.63 and 2.55 Ga, they are considered together here because there is a complete gradation in rock type and because ...

1992-01-01

416

Domain structure of ferrite-garnet crystalline plates (111) with uniaxial anisotropy

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising ...

1993-12-31

417

Concentration and Preservation of Very Low Abundance Biomarkers in Urine, such as Human Growth Hormone (hGH), by Cibacron Blue F3G-A Loaded Hydrogel Particles

Magnetic field, thickness and magnetic forming effect on general mode and quantitative parameters of the domain structure (DS) of ferrite-garnet (EuEr)/sub 3/(FeGa)/sub 5/O/sub 12/ monocrystalline plates (111) is investigated. Field interval of circle (cone) and ring domain stability is determined. It is shown that DS of ferrite-garnet crystals with uniaxial an6sotropy has some peculiarities, that can be explained by cubic anisotropy effect.

1982-03-01

418

Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current

Urine is a potential source of diagnostic biomarkers for detection of diseases, and is a very attractive means of non-invasive biospecimen collection. Nonetheless, proteomic measurement in urine...Full Text Available

2008-12-01

419

Breakdown electroluminescence spectra in structures based on the solid solutions Ga/sub 1-x/Al/sub x/P(As)

GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, ...

2011-04-01

420

Analysis of stability of semiconductor 5-component solid solutions of A"3B"5 compounds

The authors investigate the breakdown luminescence spectra in reverse-biased p-n heterojunctions based on gallium and aluminum phosphides and arsenides for the purpose of determining their behavior as lasing and photodetection materials. Data are given on temperature coefficients, band gap structure, bremsstrahlung, hot carrier mobility and photon emission, and transition and recombination parameters.

1987-08-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

421

Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy

With the use of the regular solutions model the expressions have been derived for calculation of boundaries of spinodal decomposition region as applied to five-component solid solutions of A"3B"5 compounds. The evaluation has been made of fields of stability for Al_x__1Ga_x__2In_1_-_x__1_-_x__2PyAs_1_-_y solid solution.

422

United States Domestic Research Reactor Infrastrucutre TRIGA Reactor Fuel Support

The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of ...

2005-06-01

423

Transuranium isotopes production and their effect on the three-dimensional core calculation

The United State Domestic Research Reactor Infrastructure Program at the Idaho National Laboratory manages and provides project management, technical, quality engineering, quality inspection and nuclear material support for the United States Department of Energy sponsored University Reactor Fuels Program. This program provides fresh, unirradiated nuclear fuel to Domestic University Research Reactor Facilities and is responsible for the return of the DOE-owned, irradiated nuclear fuel over the life of the program. This presentation will introduce the program management team, the universities supported by the program, the status of the program and focus on the return process of irradiated nuclear fuel for long term storage at DOE managed receipt facilities. It will include lessons learned from research reactor facilities that have successfully shipped spent fuel elements to DOE receipt facilities.

2011-03-01

424

Transuranium isotopes production and their effect on the three-dimensional core calculation

The operation of a nuclear power reactor necessarily implies the consumption or burnup of reactor fuel by fission and capture, which gives rise to a decrease in the reactivity of the reactor. The effect of americium formation on the criticality of a thermal power reactor using two types of fuel is studied. The three-dimensional core calculation is used to calculate the production of the transuranium isotopes and their effect on the effective multiplication factor (K[sub eff]). This effect cannot be neglected for thermal power reactors with UO[sub 2]-PuO[sub 2] fuel (3.11% after 70 weeks of operation). The effect of the transuranium isotopes on the K[sub eff] for a thermal power reactor with UO[sub 2] fuel is about 0.0018% and can be ignored. (author).

1993-02-01

425

The explosion reason analysis of urea reactor of Pingyin

The operation of a nuclear power reactor necessarily implies the consumption or burnup of reactor fuel by fission and capture, which gives rise to a decrease in the reactivity of the reactor. The effect of americium formation on the criticality of a thermal power reactor using two types of fuel is studied. The three-dimensional core calculation is used to calculate the production of the transuranium isotopes and their effect on the effective multiplication factor (K_e_f_f). This effect cannot be neglected for thermal power reactors with UO_2-PuO_2 fuel (3.11% after 70 weeks of operation). The effect of the transuranium isotopes on the K_e_f_f for a thermal power reactor with UO_2 fuel is about 0.0018% and can be ignored. (author).

426

British Library Electronic Table of Contents (United Kingdom)

In allusion to the explosion of a urea reactor took place in a fertilizer plant at Pingyin, Shandong, China, a series of evidence collection and inspection jobs which includes collecting operation condition and parameters, sampling the explosion fracture, reactor body apart from explosion fracture, and leak detection medium and its hangover, etc., had been carried out firstly. Based on these jobs, farther analysis and computation work has been done to the structural and materials characteristics and the operation condition of the urea reactor, including compositions, metallographic phases, tensile properties, impact energy, strain ageing characteristics, and fracture toughness of the urea reactor steels, the compositions of leak detection medium and its hangover in the urea reactor, and ex...

2009-01-01

427

The advanced MAPLE reactor concept

Status report on the fusion breeder

High-flux neutron sources are continuing to be of interest both in Canada and internationally to support materials testing for advanced power reactors, new developments in extracted-neutron-beam applications, and commercial production of selected radioisotopes. The advanced MAPLE reactor concept has been developed to meet these needs. The advanced MAPLE reactor is a new tank-type D_2O reactor that uses rodded low-enrichment uranium fuel in a compact annular core to generate peak thermal-neutron fluxes of 1 x 10"1"9 n#centre dot#s"-"1 in a central irradiation rig with a thermal power output of 50 MW. Capital and incremental development costs are minimized by using MAPLE reactor technology to the greatest extent practicable.

1985-10-14

428

Space reactor fuel element testing in upgraded TREAT

The rationale for hybrid fusion-fission reactors is the production of fissile fuel for fission reactors. A new class of reactor, the fission-suppressed hybrid promises unusually good safety features as well as the ability to support 25 light-water reactors of the same nuclear power rating, or even more high-conversion-ratio reactors such as the heavy-water type. One 4000-MW nuclear hybrid can produce 7200 kg of /sup 233/U per year. To obtain good economics, injector efficiency times plasma gain (eta/sub i/Q) should be greater than 2, the wall load should be greater than 1 MW m/sup -2/, and the hybrid should cost less than 6 times the cost of a light-water reactor. Introduction rates for the fission-suppressed hybrid are unusually rapid.

1980-12-12

429

Review of SCDAP/RELAP5 Code Application to severe accident analysis of CANDU Reactors

The testing of candidate fuel elements at prototypic operating conditions with respect to temperature, power density, hydrogen coolant flow rate, etc., a crucial component in the development and qualification of nuclear rocket engines based on the Particle Bed Reactor (PBR), NERVA-derivative, and other concepts. Such testing may be performed at existing reactors, or at new facilities. A scoping study has been performed to assess the feasibility of testing PBR based fuel elements at the TREAT reactor. initial results suggest that full-scale PBR, elements could be tested at an average energy deposition of {approximately}60--80 MW-s/L in the current TREAT reactor. If the TREAT reactor was upgraded to include fuel elements with a higher temperature limit, average energy deposition of {approximately}100 MW/L may be achievable.

1993-05-01

430

Research and development on next generation reactor (phase I)

SCDAP/RELAP5 code has been developed in US for best-estimate simulation of light water reactors transients during nuclear accidents. The code models the coupled behaviour of the cooling system, reactor core and fission products release during the accident. It is the result of the coupling between RELAP5, modelling thermal hydraulic, control system, reactor kinetics and the transport of noncondensable gases, and SCDAP code modelling the behaviour of the reactor core during severe accidents. The paper briefly presents the application of SCDAP/RELAP5 code to CANDU severe accident analysis. Also, the paper proposes a summary of the needs for development that could enhance the quality of the severe accidents related predictions in CANDU reactors. (authors)

2009-10-12

431

Radioactive waste disposal for fission and fusion reactors

The objective of the study is to improve the volume of nuclear power plant which adopts passive safety system concept. The passive safety system reactor is characterized by excellent safety and reliability. But the volume of NSSS (Nuclear Steam Supply System) of the passive safety system reactor is so small that it should be upgraded for commercial operation. For volume upgrade, detailed analyses are performed as follows; core design, hydraulics, design and mechnical structures, and safety analysis. In addition to above analysis, some investigations must be supplied as follows: power density vs. DNB margin decrease, outlet temperature vs. EPRI-URD, additional tests for upgraded reactor, dynamic analysis of mechanical vibration according to expanded reactor vessel and expanded in-core structures, and Merit loss of passive safety system reactor according to design margin decrease. ...

1994-10-01

432

Liquid metal reactor cover gas purification and analysis in the USA

The calculated radioactive waste inventories of the Turkey Point pressurized water fission reactor (PWR) and the Starfire conceptual fusion tokamak are compared as a function of time from initial start-up to 10,000 years after decommissioning. Only material out of reactor at least one year is considered. The total activity in Ci/W(th) of the Starfire tokamak is slightly greater than that of the PWR during the active lifetimes of the two reactors and beyond 1000 years. However, using reduced activation materials in Starfire can result in about 1/2000 as much long-lived radioactivity as in the fission reactor. It is stressed that comparison of wastes on this basis is not straightforward, since the radioisotopes and methods required for their disposal are different for fusion and fission reactors. 2 refs., 1 fig., 2 tabs.

1989-01-01

433

Laser application in the fabrication of gas-tagged capsules. A leak detection system

Two sodium cooled reactors are currently being operated in the United States of America for the US Department of Energy. These are Experimental Breeder Reactor 11, EBR-11, and the Fast Flux Test Facility, FFTF. EBR-11 is located near Idaho Falls, Idaho, and the FFTF is near Richland, Washington. These reactors are currently engaged in a wide range of testing including fuels and materials tests, and plant system performance and safety development. The US DOE program also includes designs of a next generation sodium cooled power reactor. The FFTF and EBR-11 communities are providing input to these designs. This paper discusses the efforts to develop and operate cover gas systems for the sodium cooled nuclear reactor program in the USA.

1986-09-24

434

Five years operating experience at the Fast Flux Test Facility

Encapsulation of a unique isotopic blend of krypton and xenon gas employs a special application of laser technology. The encapsulated gas is then used as the primary medium for detection and identification of failed nuclear fuel rods. The use of gas tagging as a means of detecting and identifying failed nuclear fuel rods has been successfully demonstrated and used by the Argonne National Laboratory, Experimental Breeder Reactor (EBR-2) Project, and the Westinghouse Hanford Company (WHC), Fast Flux Test Facility (FFTF) Fast Breeder Reactor Program. The Power Reactor and Nuclear Fuel Development Corporation (PNC) of Japan has selected this leak detection system for use in their MONJU Prototype Reactor fuel assemblies. The MONJU reactor is almost identical in design to the highly successful FFTF reactor, which is currently in standby status.

1993-12-01

435

Five years operating experience at the Fast Flux Test Facility

The Fast Flux Test Facility (FFTF) is a 400 Mw(t), loop-type, sodium-cooled, fast neutron reactor. It is operated by the Westinghouse Hanford Company for the United States Department of Energy at Richland, Washington. The FFTF is a multipurpose test reactor used to irradiate fuels and materials for programs such as Liquid Metal Reactor (LMR) research, fusion research, space power systems, isotope production and international research. FFTF is also used for testing concepts to be used in Advanced Reactors which will be designed to maximize passive safety features and not require complex shutdown systems to assure safe shutdown and heat removal. The FFTF also provides experience in the operation and maintenance of a reactor having prototypic components and systems typical of large LMR (LMFBR) power plants. The 5 year operational performance of the FFTF reactor is ...

1987-04-01

436

A comparison study on activation safety of fusion, fission and hybrid reactor technology

The Fast Flux Test Facility (FFTF) is a 400 Mw(t), loop-type, sodium-cooled, fast neutron reactor. It is operated by the Westinghouse Hanford Company for the United States Department of Energy at Richland, Washington. The FFTF is a multipurpose test reactor used to irradiate fuels and materials for programs such as Liquid Metal Reactor (LMR) research, fusion research, space power systems, isotope production and international research. FFTF is also used for testing concepts to be used in Advanced Reactors which will be designed to maximize passive safety features and not require complex shutdown systems to assure safe shutdown and heat removal. The FFTF also provides experience in the operation and maintenance of a reactor having prototypic components and systems typical of large LMR (LMFBR) power plants. The 5 year operational performance of the FFTF reactor is ...

1987-09-13

437

A comparison study on activation safety of fusion, fission and hybrid reactor technology

The activation aspects of pure fusion and hybrid fusion technology is studied to assess the radioactive safety of various fusion concepts including tokamak pure fusion, fissile fuel producing hybrid and radio waste transmuting hybrid. The activation properties of breeding, coolant and structural materials in fusion reactors might be quite different from those in fission reactors because of the high energy D-T fusion neutrons from the fusion cores. A study on the involved activation reactions and the uncertainties of the associated nuclear cross-sections is carried. The activation properties of various first wall concepts and blanket concepts are discussed. The radioactive inventory during the operation lifetime and the potential hazard of the radioactive nuclides with respect to near term (reprocessing) and long term (waste disposal) aspects are calculated, with reference to ITER/NET (International Thermonuclear Experiment ...

1994-12-31

438

System Requirements Document for the Molten Salt Reactor Experiment

The activation aspects of pure fusion and hybrid fusion technology is studied to assess the radioactive safety of various fusion concepts including tokamak pure fusion, fissile fuel producing hybrid and radio waste transmuting hybrid. The activation properties of breeding, coolant and structural materials in fusion reactors might be quite different from those in fission reactors because of the high energy D-T fusion neutrons from the fusion cores. A study on the involved activation reactions and the uncertainties of the associated nuclear cross-sections is carried. The activation properties of various first wall concepts and blanket concepts are discussed. The radioactive inventory during the operation lifetime and the potential hazard of the radioactive nuclides with respect to near term (reprocessing) and long term (waste disposal) aspects are calculated, with reference to ITER/NET (International Thermonuclear Experiment ...

439

Study on the separation characteristics of tritiated water vapor adsorption.

The purpose of the conversion process is to convert the {sup 233}U fluoride compounds that are being extracted from the Molten Salt Reactor Experiment (MSRE) equipment to a stable oxide for long-term storage at Bldg. 3019.

2000-04-01

440

Spent fuel management in Czechoslovak WWER-440 type reactors

In order to reduce the air concentration of (sup 3)H in the reactor buiIding of Wolsung Heavy Water Reactor, a computer code for estimation of adsorption behavior was programmed based on an equation derived for analysis of water vapor adsorption, and a ba...

1991-01-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

441

Simulation tools and new developments of the molten salt fast reactor

The main aspects of the present WWER-440 reactors spent fuel management are described in the paper. Experimental results of fuel integrity studies which are carried out under conditions of a long-term storage are also presented. (author). 5 refs, 5 figs.

1988-12-01

442

Seismic Testing of Reactor Components.

Starting from the Molten Salt Breeder Reactor project of Oak-Ridge, we have performed parametric studies in terms of safety coefficients, reprocessing requirements and breeding capabilities. In the frame of this major re-evaluation of the molten salt reactor (MSR), we have developed a new concept called Molten Salt Fast Reactor or MSFR, based on the Thorium fuel cycle and a fast neutron spectrum. This concept has been selected for further studies by the MSR steering committee of the Generation IV International Forum in 2009. Our reactor's studies of the MSFR concept rely on numerical simulations making use of the MCNP neutron transport code coupled with a code for materials evolution which resolves the Bateman's equations giving the population of each nucleus inside each part of the reactor at each moment. Because of MSR's fundamental characteristics compared to classical ...

443

Radioactive Waste Disposal for Fission and Fusion Reactors.

This report is the final report on the seismic testing of reactor components conducted since 1977 with opening of the vibration laboratory at KAERI. In 1979, forced vibration testing of Wolsung-1 steam generator model using sine dwell and white nosie rand...

1980-01-01

444

New neutron simulation capabilities provided by the Sandia Pulse Reactor (SPR-III) and the Upgraded Annular Core Pulse Reactor (ACPR)

The calculated radioactive waste inventories of the Turkey Point pressurized water fission reactor (PWR) and the Starfire conceptual fusion tokamak are compared as a function of time from initial start-up to 10,000 years after decommissioning. Only materi...

1989-01-01

445

Neutron data requirements for calculating transactinide isotope build-up in reactors

The paper briefly describes the nuclear reactor facilities at Sandia Laboratories which are used for simulating nuclear weapon produced neutron environments. These reactor facilities are used principally in support of continuing R and D programs for the Department of Energy/Office of Military Application (DOE/OMA) in studying the effects of radiation on nuclear weapon systems and components. As such, the reactors are available to DOE and DOD agencies and their contractors responsible for the radiation hardening of advanced nuclear weapon systems. Emphasis is placed upon two new reactor simulation sources; the Sandia Pulse Reactor-III (SPR-III) Facility which enhances the neutron exposure volume capabilities over those presently available with the existing SPR-II Facility, and the Upgraded Annular Core Pulse Reactor (ACPR) Facility which enhances the neutron ...

1978-07-01

446

NUCLEAR REACTOR WITH CHARGE OF HOMOGENEOUSLY CAST BREEDER ELEMENTS

Based on a generalized theory of perturbations and on non-linear programming an approach to the quantitative determination of necessary accuracies for nuclear data is described. It is used to calculate transactinide isotope build-up in reactors.

1979-08-01

447

Irradiation-effects considerations for the SP-100 space reactor

A reactor was proposed in which the breeder mantel would consist of a charge of homogeneous cast breeder elements, so that the breeder element has the same shape as the fuel elements. By this method it would be possible to use the breeder element after its irradiation immediately for the charging of the fuel elements.

1959-01-01

448

International Space Station Overview - NASA

The Sp-100 reactor is a lithium-cooled high-temperature fast-spectrum reactor. The fuel is UN. The cladding is fabricated from PWC-11, a Nb alloy, as are all the primary structural components. A reactor lifetime of up to ten years with an operating temperature of 1370 K is required. The accumulated fluence is expected to be 6 x10"2"2 n/cm"2. The damage, which could result in swelling or embrittlement, anneals out as fast as it occurs for the majority of the structure. This has been confirmed by earlier radiation testing. A number of components, however, are exposed to lower temperatures and the reactor design and materials selection for these components must take this into consideration. Radiation effects must also be considered for the UN fuel, bearing materials, etc. To data an instrumented experiment, MOTO 1000A, has been conducted in the FFTF reactor and as uninstrumented ...

1992-03-01

449

Fuels and materials testing capabilities in Fast Flux Test Facility

(accumulates & stores brine for disposal). Separator. (separates water from purge gases). ? Purge pump periodically vent ... Reactor Health. Sensor. ( verifies reactor is operating w/n limits) ... Waste and Hygiene Compartment ...

450

Fuels and materials testing capabilities in Fast Flux Test Facility

The Fast Flux Test Facility (FFTF) reactor, which started operating in 1982, is a 400 MWt sodium-cooled fast neutron reactor located in Hanford, Washington State, and operated by Westinghouse Hanford Co. under contract with U.S. Department of Energy. The reactor has a wide variety of functions for irradiation tests and special tests, and its major purpose is the irradiation of fuel and material for liquid metal reactor, nuclear reactor and space reactor projects. The review first describes major technical specifications and current conditions of the FFTF reactor. Then the plan for irradiation testing is outlined focusing on general features, fuel pin/assembly irradiation tests, and absorber irradiation tests. Assemblies for special tests include the material open test assembly (MOTA), fuel open test assembly (FOTA), closed loop ...

1989-07-01

451

Final Report of ''On-the-Job Training'' on the CANDU Reactor.

The Fast Flux Test Facility (FFTF) reactor, which started operating in 1982, is a 400 MWt sodium-cooled fast neutron reactor located in Hanford, Washington State, and operated by Westinghouse Hanford Co. under contract with U.S. Department of Energy. The reactor has a wide variety of functions for irradiation tests and special tests, and its major purpose is the irradiation of fuel and material for liquid metal reactor, nuclear reactor and space reactor projects. The review first describes major technical specifications and current conditions of the FFTF reactor. Then the plan for irradiation testing is outlined focusing on general features, fuel pin/assembly irradiation tests, and absorber irradiation tests. Assemblies for special tests include the material open test assembly (MOTA), fuel open test assembly (FOTA), closed loop ...

452

Coal reactor conservation of blast furnace coke

This is the final Report for the technical ''on-the-job traning'' for the Wolsung CANDU nuclear power plant which is the first Pressurized Heavy Water Reactor setting up in Korea. The technical ''on-the-job traning'' was established to increase the capabi...

1983-01-01

453

Advanced PWR technology development -Development of advanced PWR system analysis technology-

Coke consumption may be cut as much as fifty percent using a coal reactor to furnish carbon monoxide for ore reduction in a blast furnace while lowering the sulfur content of pig iron accompanied by a smaller slag volume.

1982-02-23

454

A design study of reactor core optimization for direct nuclear heat-to-electricity conversion in a space power reactor

The primary scope of this study is to establish the analysis technology for the advanced reactor designed on the basis of the passive and inherent safety concepts. This study is extended to the application of these technology to the safety analysis of the passive reactor. The study was performed for the small and medium sized reactor and the large sized reactor by focusing on the development of the analysis technology for the passive components. Among the identified concepts the once-through steam generator, the natural circulation of the integral reactor, heat pipe for containment cooling, and hydraulic valve were selected as the high priority items to be developed and the related studies are being performed for these items. For the large sized passive reactor, the study plans to extend the applicability of the best estimate computer code RELAP5/MOD3 which is ...

1995-07-01

455

Waste management considerations for fusion power reactors

To propose a new design concept of a nuclear reactor used in the space, research has been conducted on the conceptual design of a new nuclear reactor on the basis of the following three main concepts: (1) Thermionic generation by thermionic fuel elements (TFE), (2) reactivity control by rotary reflector, and (3) reactor cooling by liquid metal. The outcomes of the research are: (1) A calculation algorithm was derived for obtaining convergent conditions by repeating nuclear characteristic calculation and thermal flow characteristic calculation for the space nuclear reactor. (2) Use of this algorithm and the parametric study established that a space nuclear reactor using 97% enriched uranium nitride as the fuel and lithium as the coolant and having a core with a radius of about 25 cm, a height of about 50 cm and a generation efficiency of about 7% can probably be operated continuously ...

1998-01-01

456

Waste management considerations for fusion power reactors

To estimate the waste management needs of a fusion power reactor, a scheme for handling radioactive waste from a fusion plant has been devised. The handling scheme proceeds with radioactive waste, primarily from blanket replacement, being stored on-site; waste in cooled and shielded casks is then isolated off-site; finally, the materials are recycled. Using activities and component lifetimes supplied by designers, several conceptual fusion power reactors have been analyzed and their waste streams compared to fission reactors with regard to total activity, specific activity, and lifetimes of activity.

457

UK's Sizewell inquiry; funny how time slips away

To estimate the waste management needs of a fusion power reactor, a scheme for handling radioactive waste from a fusion plant has been devised. The handling scheme proceeds with radioactive waste, primarily from blanket replacement, being stored on-site; waste in cooled and shielded casks is then isolated off-site; finally, the materials are recycled. Using activities and component lifetimes supplied by designers, several conceptual fusion power reactors have been analyzed and their waste streams compared to fission reactors with regard to total activity, specific activity, and lifetimes of activity.

1978-02-01

458

The impact of core flow rate on the water chemistry and corrosion in boiling water reactors

Comments are made on the Public Inquiry into CEGB's proposal to construct a pressurized water reactor (PWR) at Sizewell, UK. Aspects discussed include: time elapsed and its possible effect on the result; economics of nuclear power plants compared with coal-fired power plants; changes in real sterling/dollar exchange rates; effect of mineworkers' strike; the UK electric power generating system; AGR reactors compared with PWR reactors; extension of Magnox reactor life; radioactive waste management; political decisions.

1985-03-01

459

The SBWR (simplified boiling water reactor) thermal-hydraulic performance analysis and testing

... Development Center, National Tsing-Hua University, Hsinchu, TW (China)

2008-05-01

460

Spent fuel transport and processing of research reactors. Experience and problems

Utility interest has recently increased in potential future nuclear units that combine the characteristics of smaller size, greater simplicity, and more passive safety features. In response to such interest, General Electric (GE) began development in 1982 of a 600-MW(electric) reactor with simplified power generation and safety systems. This paper provides an overview of the simplified boiling water reactor (SBWR) design, with emphasis on the thermal-hydraulic aspects of the design. The SBWR is a natural circulation reactor requiring no pumps to circulate the water through the core.

1989-11-01

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

461

Some studies on physics parameters of Wolsung unit no. 1

2001 p. 12-14 Russian Federation Dzekup, EG Golubkin, KV Glagolenko,

462

Safe Type of Transference for Spent Fuel

Nuclear physics parameters of the Wolsung CANDU-PHW reactor are computed by use of the PHWCELL computer code that is an improved version of LATREP. The PHWCELL code mainly computes cell parameters of heavy water moderated reactors, and modeling scheme of heavy water reactor cell calculations has been developed with the PHWCELL computer code. The reactor operating conditions considered in the study are cold zero power (CZP) and hot full power (HFP) with equilibrium poison. The cell parameters are also computed as a function of fuel burnup and the numerical results are compared with the results in PSR of the Wolsung unit and in the previous study. (author).

1980-01-01

463

Risk assessment for the SNR-300 reactor. Earthquake hazard emanating from reactor component failure

Safe Transference of Spent Fuel Assemblies from Near-Reactor Storage Pools to Long-term "Dry" Storage

464

Real-time neutron radiography at the Georgia Tech Research Reactor

The risk analysis was carried out in consideration of conditions prevailing at the Kalkar site analogous to the investigations in phase A of DRS (German Reactor Study). Earthquake design loads include the probabilities of upper deviations of the site intensities to be expected. The calculations of dynamic loads for select buildings are made using models and computational methods. Component analyses were performed analogous to DRS for the supports of large components, supports of the roof construction of the reactor building taking into account support reserves due to plastic work capacity, wall disks in steam generator buildings and switchboard plant buildings. (DG).

465

Reactor poolside high-resolution fuel rod gamma scanning system

(Jun 1982). United States Davis, MV Berger, H. Patricelli, F. Georgia Institute

1982-06-11

466

Projection of Graphite Behavior: Comparison of Results on Four Conceptual Fusion Reactor Designs.

(1981). United States Blair, TR Exxon Nucl, Richland, WA 99352

467

Potential gas entry into FFTF after a postulated pipe rupture

For abstract, see NSA 29 07, number 17425.

1973-01-01

468

Method for limiting scram discharge water

... failures fftf reactor heat transfer hydraulics loss of coolant pipes primary coolant

469

Medical Isotope Production in the Fast Flux Test Facility and the High Flux Isotope Reactor and Isotope Production Software Users Guides

Object: To limit the discharge amount of reactor water in a primary system at the time of scram to prevent excessive outflow of reactor water outside the system. Structure: A signal from an upper limit position indicator detects the fact that control rods are completely inserted when the reactor is urgently stopped and the detection signal causes a valve in an outflow line of the discharge water from a control rod driving mechanism to be closed to limit the amount of discharge flown into the scram discharge vessel, thus preventing outflow of reactor water in the primary system after the scram has been initiated. (Kamimura, M.).

470

Investigation of FP paths during hypothetical severe accident as a result of Small Break LOCA of WWER-1000 reactor type

No abstract prepared.

2000-08-23

471

Handbook: Approaches for the Remediation of Federal Facility ...

Modelling the behaviour of fission product (FP) in a nuclear reactor coolant system (RCS) undergoing a hypothetical severe accident is an important step in the evaluation of radioactive release outside a nuclear power plant. This paper scrutinize Small Break LOCA sequence for WWER1000 reactor in order to investigate the possible paths for release of FP from fuel pallets to the reactor containment. Contemporaneous computer code for simulation of RCS will be use for the analysis. The results from analysis of fuel damage and release of FP trough the break of cold leg are present. (author)

2006-04-01

472

Fuel cycle cost sensitivity analysis for boiling and pressurized water reactors

... 4-4 UXO disposal operations ... testing of sequencing batch reactor treatment of ... and lead toward the anode compartment ..... ...

1993-09-01

473

Fuel Assembly Materials under Dry Storage

(1977). United States Parvez, A. Becker, M. Boguslawski, D. Harris,

1977-11-27

474

Finite Element Analysis of Magnetoelastic Plate Problems.

Behavior of Nuclear Reactor Fuel Assembly Materials during Their Long-Term Dry Storage

475

FFTF progress highlights, winter 1975--1976

... in the design of such devices as fusion reactors, magnetohydrodynamic generators, magnetically levitated vehicles, magnetic forming devices, and ...

1981-08-01

476

Experience of HWR nuclear fuel fabrication technology development in Korea

Milestones concerning equipment, reactor components, and testing and operations at the FFTF since July 1, 1975 are highlighted. (JWR)

1975-07-01

477

Experience of HWR nuclear fuel fabrication technology development in Korea

Since January, 1981, the project of development of nuclear fuel fabrication technology for Wolsung reactor (CANDU type) was undertaken by KAERI(Korea Advanced Energy Research Institute) and successfully fulfilled with loading 24 fuel bundles made by KAERI in Wolsung reactor in September, 1984. On the basis of this accumulated technology and experience, mass production plan to supply all the nuclear fuels for Wolsung reactor is under way. In this presentation, the Korean experience in the development of the nuclear fuel fabrication technology, safety and performance evaluation of KAERI fuel and the results of irradiation of KAERI fuels in Wolsung reactor will be described.

1985-07-01

478

Evaluation of tritiated water retention capacity of fusion reactor concrete building

Since January, 1981, the project of development of nuclear fuel fabrication technology for Wolsung reactor (CANDU type) was undertaken by KAERI(Korea Advanced Energy Research Institute) and successfully fulfilled with loading 24 fuel bundles made by KAERI in Wolsung reactor in September, 1984. On the basis of this accumulated technology and experience, mass production plan to supply all the nuclear fuels for Wolsung reactor is under way. In this presentation, the Korean experience in the development of the nuclear fuel fabrication technology, safety and performance evaluation of KAERI fuel and the results of irradiation of KAERI fuels in Wolsung reactor will be described.

1985-10-29

479

Evaluation of tritiated water retention capacity of fusion reactor concrete building

In this paper the diffusion of tritiated water vapor into concrete walls is studied to evaluate tritiated water retention capacity of a fusion reactor concrete building. Using a model of the tritiated water diffusion determined form experimental results, depth profiles of tritiated water in concrete are calculated in the case of being exposed to air containing tritiated water vapor during the normal operational condition of a fusion reactor. A 0.5-m-thick concrete is sufficient for reactor hall walls from a viewpoint of the tritium containment.

1992-03-01

480

Evaluation of the fluid force in main feed water control valve for APWRs

In this paper the diffusion of tritiated water vapor into concrete walls is studied to evaluate tritiated water retention capacity of a fusion reactor concrete building. Using a model of the tritiated water diffusion determined form experimental results, depth profiles of tritiated water in concrete are calculated in the case of being exposed to air containing tritiated water vapor during the normal operational condition of a fusion reactor. A 0.5-m-thick concrete is sufficient for reactor hall walls from a viewpoint of the tritium containment.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

481

Emergency core cooling device for a reactor

... 2432 v. 43(1) SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS

2006-01-01

482

Directions for improved fusion reactors

Purpose : To obtain an emergency core cooling device in a FBR type reactor by utilizing heat pipes which are not actuated at usual operation condition but actuated reliably upon emergency. Constitution : A system for injecting heat medium into heat pipes is provided. By injecting the heat medium into the heat pipes upon emergency to actuate the heat pipes, the reactor core is cooled. During normal reactor operation, the inside of the heat pipes is evacuated from a vacuum pump and no heat medium is filled therein, whereby unnecessary heat loss during the normal operation can be prevented. (Ikeda, J.).

1982-01-24

483

Development of Synthol circulating fluidized bed reactors

Conceptual fusion reactor studies over the past 10 to 15 years have projected systems that may be too large, complex, and costly to be of commercial interest. One main direction for improved fusion reactors points towards smaller, higher-power-density approaches. First-order economic issues (i.e., unit direct cost and cost of electricity) are used to support the need for more compact fusion reactors. A generic fusion physics/engineering/costing model is used to provide a quantiative basis for these arguments for specific fusion concepts.

484

Depleted zinc: Properties, application, production

In 1980 Sasol completed its very large coal conversion complex, Sasol Two and Three in South Africa. This complex, the largest coal-to-liquids facility in the world, utilizes Sasol's proprietary Fischer-Tropsch technology, the Synthol Process. The two key elements of the Synthol Process are its catalyst and its unique fluidized bed reactor, the Synthol Circulating Fluidized Bed Reactor. Details on the catalytic aspects and reaction mechanism have been given elsewhere. In this paper, the history of the development of the reactor is discussed.

1986-08-01

485

Core simulations using actual detector readings for a Canada deuterium uranium reactor

The addition of ZnO, depleted in the Zn-64 isotope, to the water of boiling water nuclear reactors lessens the accumulation of Co-60 on the reactor interior surfaces, reduces radioactive wastes and increases the reactor service-life because of the inhibitory action of zinc on inter-granular stress corrosion cracking. To the same effect depleted zinc in the form of acetate dihydrate is used in pressurized water reactors. Gas centrifuge isotope separation method is applied for production of depleted zinc on the industrial scale. More than 20 years of depleted zinc application history demonstrates its benefits for reduction of NPP personnel radiation exposure and combating construction materials corrosion.

2009-07-15

486

Computer control of fuel handling activities at FFTF

This paper reports that, to obtain better simulation results for a Canada deuterium uranium (CANDU) reactor operation, a new simulation method is developed that uses actual detector readings as a correction factor. Detector readings from a CANDU reactor are used to correct the calculated flux distribution during core calculation iterations. A suitable function is found to describe the relationship between the detector flux and the fluxes of mesh points around the detector. The new simulation method is tested by performing numerical calculations for the Wolsung reactor (a CANDU-600). The results show that the new method predicts the core state more accurately with fewer iterations.

1991-02-01

487

The Fast Flux Test Facility near Richland, Washington, utilizes computer control for reactor refueling and other related core component handling and processing tasks. The computer controlled tasks described in this paper include core component transfers within the reactor vessel, core component transfers into and out of the reactor vessel, remote duct measurements of irradiated core components, remote duct cutting, and finally, transferring irradiated components out of the reactor containment building for off-site shipments or to long term storage. 3 refs., 16 figs.

1985-09-08

488

Canadian nuclear review

CARBON DIOXIDE REDUCTION SYSTEM

Progress in the construction of Candu reactors at home and abroad is surveyed. Some A.E.C.L. research projects are also mentioned. During 1979, Candu reactors again showed their superior capacity factors, four of them being among the ten most reliable reactors in the world. Progress in construction at Pickering B, Bruce B, Point Lepreau, Gentilly-2, Darlington, Wolsung (Korea), Cordoba (Argentina), and Cernavoda (Romania) is recounted. In 1979, it was unfortunately necessary to replace installed steam generators at Pickering B, Bruce B, Point Lepreau and Gentilly-2. At Wolsung, the reactor was pre-assembled before installation, which is a new technique. (N.D.H.).

1979-01-01

489

Assessment of cooling effects on extending the maximum operating time for the Syrian Miniature Neutron Source Reactor

... be easily replaceable, and its compartment or container ... in a simple, efficient manner for storage or disposal. ... and enters the reactor at approximatel ...

1963-01-01

490

Application of the GEM shutdown device to the FFTF reactor

Various schemes of cooling have been investigated for the purpose of assessing potential benefits on the operational characteristics of the Syrian MNSR reactor. A detailed thermal hydraulic model for the analysis of MNSR has been developed. The analysis shows that an auxiliary cooling system, installed in the pool which surrounds the lower section of the reactor vessel, will significantly offset the consumption of excess reactivity due to the negative reactivity temperature coefficient, Hence, the maximum operating time of the reactor is extended. Compared with experimental data, the suggested model proves to be valid for the analysis of MNSR behavior under both steady state and transient conditions. (author)

2007-01-01

491

Application of the GEM shutdown device to the FFTF reactor

A novel device called the gas expansion model (GEM) is being developed at the Hanford Engineering Development Laboratory for testing in the 400-MW(th) fast flux test facility (FFTF) reactor. Incorporation of the GEM into liquid-metal reactor designs is intended to measurably contribute to the achievement of inherent safety, by allowing the reactor to passively shut down even in the extremely remote (hypothetical) event of an unprotected (no scram) loss-of-flow accident. The purpose of this paper is to describe the GEM and present predictive analyses of the effectiveness of the device during unprotected loss-of-flow experiments in the FFTF.

1986-01-01

492

A Study on the H??S Removal with Utilization of Seashell Waste(II) - The Characteristics of Sulfided Reaction Using Fixed Bed Reactor-

A novel device called the gas expansion model (GEM) is being developed at the Hanford Engineering Development Laboratory for testing in the 400-MW(th) fast flux test facility (FFTF) reactor. Incorporation of the GEM into liquid-metal reactor designs is intended to measurably contribute to the achievement of inherent safety, by allowing the reactor to passively shut down even in the extremely remote (hypothetical) event of an unprotected (no scram) loss-of-flow accident. The purpose of this paper is to describe the GEM and present predictive analyses of the effectiveness of the device during unprotected loss-of-flow experiments in the FFTF.

1986-11-16

493

Thorium dioxide: properties and nuclear applications

Full Text Available

2003-09-01

494

The integrated PWR; Les REP integres

This is the sixth book on reactor materials published under sponsorship of the Naval Reactors Office of the United States Department of Energy, formerly the United States Atomic Energy Commission. This book presents a comprehensive compilation of the most significant properties of thorium dioxide, much like the book Uranium Dioxide: Properties and Nuclear Applications presented information on the fuel material used in the Shippingport Pressurized Water Reactor core.

1984-01-01

495

Production capabilities in US nuclear reactors for medical radioisotopes

This document presents the integrated reactors concepts by a presentation of four reactors: PIUS, SIR, IRIS and CAREM. The core conception, the operating, the safety, the economical aspects and the possible users are detailed. From the performance of the classical integrated PWR, the necessity of new innovative fuels utilization, the research of a simplified design to make easier the safety and the KWh cost decrease, a new integrated reactor is presented: SCAR 600. (A.L.B.)

2002-07-01

496

Nuclear power generation. Chapter 14

The availability of reactor-produced radioisotopes in the United States for use in medical research and nuclear medicine has traditionally depended on facilities which are an integral part of the US national laboratories and a few reactors at universities. One exception is the reactor in Sterling Forest, New York, originally operated as part of the Cintichem (Union Carbide) system, which is currently in the process of permanent shutdown. Since there are no industry-run reactors in the US, the national laboratories and universities thus play a critical role in providing reactor-produced radioisotopes for medical research and clinical use. The goal of this survey is to provide a comprehensive summary of these production capabilities. With the temporary shutdown of the Oak Ridge National Laboratory (ORNL) High Flux Isotope Reactor (HFIR) in November 1986, the ...

1992-11-01

497

FMDP Reactor Alternative Summary Report: Volume 2 - CANDU heavy water reactor alternative

As part of a handbook on the efficient use of energy a chapter is included which is intended to give an appreciation of the principles and problems involved in the generation of nuclear power. The subject is discussed under the following headings: introductory nuclear physics; basic reactor physics; thermal reactors; fast reactors; fuel reserves and utilization; environmental considerations; nuclear fusion. (U.K.).

1975-01-01

498