International Nuclear Information System (INIS)

The band offsets and subband levels in a double quantum well layer for a 660 nm-Ga_0_._4In_0_._6P/(Al_0_._5Ga_0_._5)_0_._5In_0_._5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical calculation of the Schroedinger equation for the layer structure by varying the conduction band offset and compared with the measured photoreflectance spectra. The conduction band offset ratio is determined to be 0.5+0.03. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Energy Technology Data Exchange (ETDEWEB)

AlGaInP epitaxial layers grown at 690 {degree}C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the {l brace}111{r brace} directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of ...

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change ...

Energy Technology Data Exchange (ETDEWEB)

Midway Labs currently produces a 335x concentrator module that has reached as high as 19{percent} active area efficiency in production. The current production module uses the single crystal silicon back contact SunPower cell. The National Renewable Energy Lab has developed a multi junction cell using GalnP/GaAs technologies. The high efficiency ({gt}30{percent}) and high cell voltage offer an opportunity for Midway Labs to develop a tracking concentrator module that will provide 24 volts in the 140 to 160 watt range. This voltage and wattage range is applicable to a range of small scale water pumping applications that make up the bulk of water pumping solar panel sales. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an ...

International Nuclear Information System (INIS)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that ...

Science.gov (United States)

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD ...

CERN Multimedia

Test de levage module QRL

Science.gov (United States)

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising ...

British Library Electronic Table of Contents (United Kingdom)

The synapsin III gene, SYN3, which belongs to the family of synaptic vesicle-associated proteins, has been implicated in the modulation of neurotransmitter release and in synaptogenesis, suggesting a potential role in several neuropsychiatric diseases. The human SYN3 gene is located on chromosome 22q12-13, a candidate region implicated in previous linkage studies of schizophrenia. However, association studies of SYN3 and schizophrenia have produced inconsistent results. In this study, four SYN3 SNPs (rs133945 (-631 C>G), rs133946 (-196 G>A), rs9862 and rs1056484) were tested in three sets of totally 3759 samples that comprise 655 affected subjects and 626 controls in the Irish Case-Control Study of Schizophrenia (ICCSS), 1350 samples incorporating 273 pedigrees in the Irish Study of High D...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

GaP and AlGaP were grown by atmospheric pressure OMVPE on GaP substrates using tertiarybutylphosphine as the phosphorus source. A specular surface of GaP was obtained on a (100) just-oriented surface at 700deg C. Hazy but uniform thickness AlGaP was obtained. The growth efficiency for GaP was 1.2x10{sup 3}{mu}m/mol and that for AlGaP was 2.1x10{sup 3}{mu}m/mol.4.2 K photoluminescence showed near-edge emission from both GaP and AlGaP. (orig.).

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native ...

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

Energy Technology Data Exchange (ETDEWEB)

The effect of the coated composite surface of particles on the mechanical properties of the powder bed was investigated. Polyethylene-silica surface composite powder was prepared at several coating ratios with Hybridizer. Various tests on mechanical properties of the powder bed were carried out with the prepared powder, and the following results were obtained: The ultimate tensile strength depends only on the cohesive force between particles, and the contact probability model of composite particles led to good agreement between the experimental and calculated values. The coefficient of internal friction and cohesive shear strength were influenced due to the interlocking effect of the surface roughness of composite particles. The effects of coating particles became small with dynamic properties like angle of repose. It is possible to control the mechanical properties in a step wise fashion by changing the coating ratio of the particles. 10 refs., 11 figs., 4 tabs.

Energy Technology Data Exchange (ETDEWEB)

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. ...

Science.gov (United States)

Lung Diseases; Cancer

DEFF Research Database (Denmark)

Udgivelsesdato: July

Energy Technology Data Exchange (ETDEWEB)

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

Science.gov (United States)

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

British Library Electronic Table of Contents (United Kingdom)

We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1-xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift.

International Nuclear Information System (INIS)

Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 A within 3000 A wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier-carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in ...

Energy Technology Data Exchange (ETDEWEB)

An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for ...

Energy Technology Data Exchange (ETDEWEB)

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

Energy Technology Data Exchange (ETDEWEB)

We discuss the initial development of a concentrator device based on the GaInP/GaAs monolithic tandem cell structure. The very high one-sun efficiency of this device, coupled with its characteristic low operating current, make this a promising candidate for use under high concentration. Test results for a prototype device are presented. This device achieves an efficiency of 29.5% at a concentration of 102 suns.

Energy Technology Data Exchange (ETDEWEB)

Short communication.

CERN Document Server

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2p sub 3 sub / sub 2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga sub 2 O sub 3 powder were used. A separate study aiming the identification of the GaAs ...

Energy Technology Data Exchange (ETDEWEB)

Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI{sub 3} or BBr{sub 3} discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates ({gt}6000thinsp{Angstrom}thinspmin{sup {minus}1}) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI{sub 3} or BBr{sub 3} content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO{sub 2} and SiN{sub x} of {ge}8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and ...

International Nuclear Information System (INIS)

The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range ...

UK PubMed Central (United Kingdom)

PurposeA dosimetric comparison between multiple static-field intensity-modulated radiation therapy (IMRT), multi-arc intensity-modulated arc therapy (IMAT) and single-arc...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

For InAs-GaAs based quantum dot lasers emitting at 1300 nm, digital modulation showing an open eye pattern up to 12 Gb s{sup -1} at room temperature is demonstrated, at 10 Gb s{sup -1} the bit error rate is below 10{sup -12} at -2 dB m receiver power. Cut-off frequencies up to 20 GHz are realised for lasers emitting at 1.1 {mu}m. Passively mode-locked QD lasers generate optical pulses with repetition frequencies between 5 and 50 GHz, with a minimum Fourier limited pulse length of 3 ps. The uncorrelated jitter is below 1 ps. We use here deeply etched narrow ridge waveguide structures which show excellent performance similar to shallow mesa structures, but a circular far field at a ridge width of 1 {mu}m, improving coupling efficiency into fibres. No beam filamentation of the fundamental mode, low a-factors and strongly reduced sensitivity to optical feedback are observed. QD lasers are thus superior to QW lasers for any system or network. ...

Energy Technology Data Exchange (ETDEWEB)

Successful interface engineering requires compositional and electronic material characterization as a prerequisite for understanding and intentionally generating interfaces in photovoltaic devices. The paper gives an overview with several examples, all referring to Cu(In,Ga)(S,Se){sub 2} ('CIGSSe')-based solar cells, with an emphasis on characterization using highly specialized methods, such as elastic recoil detection analysis, X-ray emission spectroscopy and photoelectron spectroscopy using synchrotron and ultraviolet light for excitation, inverse photoemission spectroscopy and Kelvin probe force microscopy. First, the determination of the depth profile of the band gap energy E{sub g} in the absorber layer is demonstrated. The modification of E{sub g} towards both interfaces is discussed in terms of beneficial electronic effects. Next, the interface between absorber and buffer layers with alternative and promising non-toxic materials is ...

International Nuclear Information System (INIS)

This paper describes the design of PMT readout module for detector prototype of Daya Bay Reactor Neutrino Experiment. According to the design requirements of the readout module, the basic structure of the readout module is discussed. This paper also discusses how to realize the charge measurement and time measurement and data processing using a high performance FPGA. The DAQ system including three readout modules and one trigger module are well commissioned and doing data taking now. (authors)

Energy Technology Data Exchange (ETDEWEB)

The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

Science.gov (United States)

Useful bipolar transistor action over the temperature range from -195 to 550 /sup 0/C has been demonstrated for heterojunction bipolar transistors in the GaP/AlGaP chemical system. This represents the highest temperature at which useful bipolar solid-state transistor action has ever been demonstrated in any material. Improvements in the materials technology and in the understanding of device characteristics at high temperatures were essential to the successful fabrication of these devices. These results demonstrate that the GaP/AlGaP heterojunction system is an excellent technology for active electronic components operated at high temperatures.

Energy Technology Data Exchange (ETDEWEB)

Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.

Science.gov (United States)

Disclosed in this proposal are plans to construct a patent pending wrist module with computer control, configurable to form high-dexerity telerobotic arms ...

Energy Technology Data Exchange (ETDEWEB)

To make the surface composites with hard ceramics particles is an effective means for satisfying the request for the wear-resistance of the casting products. Covering casting is a general method for forming the composites by adding the adhesive into ceramics particles. However, due to the using of adhesive, pore and intermediate are easy to generate, and it is one of the reasons making the wear-resistance unstable. In the present study, it is attempted to form the wear-resistant composite layer by dispersing cast tungsten carbide (CTC) particles on the surface of wear-resistant 7 mass% Mn steel without using adhesives. Subsequently, the experiments on the wear-resistance of the obtained surface composites under several wear conditions are carried out. It is revealed by the results thereof that 7 mass% Mn steel surface composites with CTC particles have the wear-resistance which is even more excellent than those of white cast iron and cast chromium cast iron. It is also found that the ...

Energy Technology Data Exchange (ETDEWEB)

With an objective to learn reactivity of coal at its surface, surfaces of oxidized coal samples were investigated. Miike coal was oxidized by using {sup 18}O2 in a closed loop system. As the reaction progresses, proportion of CO2 including isotopes increased rapidly as a result of oxidation of CO sites existing in the coal and the newly generated C{sup 18}O sites. The oxidizing reaction progressed via oxygen adsorbing sites generated near the surface, and oxygen containing groups. An FT-IR analysis estimated the depth of the oxidized layer to be 10{mu}m or less from particle surface. The oxidized coal was pulverized to see its surface condition. Functional groups introduced by the oxidation enter into the vicinity of the surface in a form to desorb as CO. CO2 is trapped in inner pores. The coal surface was observed by using an atomic force microscope. No observable openings in the pore structure were discerned on the surface before the oxidation, and the structure agrees with a closed ...

CERN Document Server

The recently measured experimental data of Argonne National Laboratory for high-spin states in neutron-rich $^{71,73,75,77}$Ga isotopes have been interpreted in the framework of large-scale shell model. Calculations have been performed in $f_{5/2}pg_{9/2}$ model space with two recent effective shell model interactions, JUN45 and jj44b. We also predict high-spin states for $^{79,81}$Ga, where very little is known experimentally. The calculated results show that existence of band structure built on top of the 3/2$^-$, 5/2$^-$ and 9/2$^+$ levels in $^{71-77}$Ga. The collective structure reflected in experimental data is not well reproduced in calculated values. The calculated positive parity states in $^{71,73,75}$Ga are higher in energy in comparison to experimental finding, while for $^{77,79}$Ga, the positive parity states are in better agreement. Both the interactions predict, ...

UK PubMed Central (United Kingdom)

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

... dpg-tagungen.de Dresden (Germany) 27-31 Mar 2006 0420-0195 VDPEAZ

Energy Technology Data Exchange (ETDEWEB)

This paper discusses design considerations for the recently introduced GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140--180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. The authors focus on the issues of grid design, top-cell thickness, and antireflectance coat. They also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.

International Nuclear Information System (INIS)

Russian 1997 p. 266-267 Russian Federation Ushakova, GA

International Nuclear Information System (INIS)

... angiotensin gallium 67 lungs lysozyme patients sarcomas beta decay

International Nuclear Information System (INIS)

The fluorescence, absorption, infrared and Raman spectra of Sm_3Ga_5O_1_2 have been investigated. The energy-level schemes in the energy range 3000-16000 cm"-"1 have been determined. The number and symmetries of the Sm_3Ga_5O_1_2 crystal normal mode have been obtained by the molecular site group analysis and their comparison with the experiment has been made.

International Nuclear Information System (INIS)

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In_xAl_yGa_1_-_x_-_yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 #mu#m In_xAl_yGa_1_-_x_-_yN alloy grown on 0.5-1.0 #mu#m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In_xAl_yGa_1_-_x_-_yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In_xAl_yGa_1_-_x_-_yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have ...

Science.gov (United States)

Seasonal Allergic Rhinitis

KoreaScience (Korea)

Full Text Available

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

Recently a new method of controlling the pulse length of a short-pulse free-electron laser (FEL) has been developed. By modulating the synchronism between the optical and electron pulses in the FEL cavity, it was found that the output power and the micropulse length of the FEL beam oscillates at the modulation frequency. In this paper, we study theoretically the behavior of the micropulse length, both in the high loss (steady state) regime and the low loss (limit cycle) regime, when a modulated desynchronism is applied. In order to do this, we analyze the dynamics of a short-pulse FEL oscillator. The modulation frequency value plays an important role in the dynamics. We find that there is a resonantlike phenomenon between the externally applied desynchronism modulation and the limit cycle oscillation without modulation of a free-electron laser.

International Nuclear Information System (INIS)

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

International Nuclear Information System (INIS)

The information of phase transformation is attained by in situ XRD experiments leading to the knowledge of topological threshold in GeS2-Ga2S3 glasses. The turning point of phase transformation behavior is demonstrated to be glasses containing 14-15 mol% Ga2S3. To interpret it a network demixing model is further improved and proposed for the structure of these ternary or quasi-binary chalcogenide glasses. For the nearest-neighbor coordination environment of glass with a transitional composition of 85.7 mol% (6/7) GeS2.14.3 mol% (1/7) Ga2S3, six-coordinated [S3Ga-X-GaS3] units (X=S or None) are well isolated by the [GeS4] structures, which contributes to the decreasing of precipitation of Ga2S3 crystals in (100-x)GeS2-xGa2S3 (x?14.3) glasses corresponding to the experimental evidence of the phase transformation behavior. This scenario of intermediate-range ...

Energy Technology Data Exchange (ETDEWEB)

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

Energy Technology Data Exchange (ETDEWEB)

A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

Science.gov (United States)

The behavior of a small power system consisting of two interconnected generators is simulated in real-time by a prototype Digital Transient Network Analyzer (TNA). The prototype Digital TNA consists of two Computational Modules and one I/O Module. The Modules communicate with each other through ribbon cables. Each Computational Module simulates one Turbo-Generator, its Transformer, its Governor, Exciter, and Power System Stabilizer Systems. The numerical integration is shared by two TMS320C30 DSPs at a step-size of 100 microseconds in real-time. The I/O module post-processes the state variables and presents selected information for analog display. The paper presents oscillograms from a test program which includes symmetry checks and behavioral checks against well known waveforms of hunting oscillations, synchronization out-of-phase torques, and subsynchronous resonance phenomena. ...

Energy Technology Data Exchange (ETDEWEB)

A module is described with a receiver having a solar energy acceptance opening and supported by a mounting ring along the optic axis of a parabolic mirror in coaxial alignment for receiving solar energy from the mirror, and a solar flux modulator plate for varying the quantity of solar energy flux received by the acceptance opening of the module. The modulator plate is characterized by an annular, plate-like body, the internal diameter of which is equal to or slightly greater than the diameter of the solar energy acceptance opening of the receiver. Slave cylinders are connected to the modulator plate for supporting the plate for axial displacement along the axis of the mirror thereby shading the opening with respect to solar energy flux reflected from the surface of the mirror to the solar energy acceptance opening.

Energy Technology Data Exchange (ETDEWEB)

This research report for the Swiss Federal Office of Energy (SFOE) presents the results of a project that examined the feasibility of setting up 'MINERGIE' low-energy-consumption module standards for the production of heat in small residential buildings. The aims of the standards and the basic idea behind the MINERGIE-modules are discussed. The concepts of the modules for heat pumps and wood-fired heating systems and their combination with solar installations are examined, as are their areas of application. The requirements placed on the modules are listed. System concepts, including simple schematics for typical installations, are presented for wood-log, wood-chippings and pellets-fired systems as well as for ground-loop and air-water heat pump systems as well as their solar-aided counterparts. The results of cost-benefit analyses are presented and questions regarding system guarantee ...

Energy Technology Data Exchange (ETDEWEB)

Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

Science.gov (United States)

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and ...

Energy Technology Data Exchange (ETDEWEB)

The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been ...

International Nuclear Information System (INIS)

Ga_0_._6In_0_._4P/(Al_0_._8Ga_0_._2)_0_._4In_0_._6P strain-compensated multiple quantum wells (SCMQW) and Ga_0_._5In_0_._5P/(Al_0_._4Ga_0_._6)_0_._5In_0_._5P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

Energy Technology Data Exchange (ETDEWEB)

Continuous-wave (cw) operation at temperatures up to 23 /sup 0/C of an Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P/Ga/sub 0.52/In/sub 0.48/P/ Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 /sup 0/C for a device with a 10-..mu..m-wide and 250-..mu..m-long ion-implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 /sup 0/C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (approx.0.3 ..mu..m) p-AlGaInP layer and a p-Al/sub 0.76/Ga/sub 0.24/As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.

Energy Technology Data Exchange (ETDEWEB)

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

Energy Technology Data Exchange (ETDEWEB)

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the ...

UK PubMed Central (United Kingdom)

The GABA-modulating and GABA-mimetic activities of the monoterpenoid thymol were explored on human GABA_A and Drosophila melanogaster...Full Text Available

UK PubMed Central (United Kingdom)

We have measured the forward and reverse rates of the allosteric transition of hemoglobin A with three CO molecules bound by using modulated excitation coupled with fluorescence quenching of the DPG...Full Text Available

UK PubMed Central (United Kingdom)

Many lifespan-modulating genes are involved in either generation of oxidative substrates and end-products, or their detoxification and removal. Among such metabolites, only lipoperoxides have the ability...Full Text Available

UK PubMed Central (United Kingdom)

Intensity modulated radiotherapy (IMRT) is widely used in clinical applications in developed countries, for the treatment of malignant and non-malignant diseases. This technique uses multiple radiation...Full Text Available

UK PubMed Central (United Kingdom)

BackgroundTo compare the differences in dose-volume data among coplanar intensity modulated radiotherapy (IMRT), noncoplanar IMRT, and helical tomotherapy (HT) among patients with...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.

Energy Technology Data Exchange (ETDEWEB)

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

Science.gov (United States)

Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.

International Nuclear Information System (INIS)

The crystal field splitting of the "3H_4 ground state of the Pr ion in PrFeO_3 and PrGaO_3 has been investigated by inelastic scattering of the thermal neutrons. At several temperatures the transitions have been measured by TAS and TOF methods for polycrystalline PrFeO_3 and by the TOF method for polycrystalline PrGaO_3. Energy level schemes which are different for these materials are given. (author).

Science.gov (United States)

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

International Nuclear Information System (INIS)

A new kind of e-beam bunching enabling the production of coherent spontaneous emission (CSE) is proposed and considered. It is shown that an e-beam in passing through an undulator will induce CSE along with incoherent spontaneous radiation on the same wavelength if the e-beam transverse velocity is modulated with a spatial period twice as long as the radiation wavelength. Such angular modulated beams can be regarded as alternatives to conventionally density modulated beams for CSE production. Requirements for e-beams are similar in both cases.

Science.gov (United States)

... concentrated on the construction of switches using fiber ... been chosen for a switch realized in ... of these techniques using acousto-optic modulators or ...

International Nuclear Information System (INIS)

The oxygen vacancies distribution in the rigid lattice and the thermally activated motion of oxygen atoms are studied in La1-xSrxGa1-xMgxO3-x (x=0.00; 0.05; 0.10; 0.15 and 0.20) compounds. For that 71Ga, 25Mg and 17O NMR was performed from 100 K up to 670 K, and ion conductivity measurements were carried out up to 1273 K. The comparison of the electric field gradients at the Ga- and Mg-sites evidences that oxygen vacancies appear exclusively near gallium cations as a species trapped below room temperature in local clusters, GaO5/2-#square#-GaO5/2. These clusters decay at higher temperature into mobile constituents of the structural octahedra Ga(O5/6#square#1/6)6/2. At the same time, the nearest octahedral oxygen environment of magnesium cations persists at different doping levels. The case of two adjacent vacant anion sites is found highly unlikely within the ...

Energy Technology Data Exchange (ETDEWEB)

In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

Energy Technology Data Exchange (ETDEWEB)

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Energy Technology Data Exchange (ETDEWEB)

We report the lasing characteristics of gain-guided AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes. At room temperature, continuous-wave operation is achieved over the wavelength range of 657--685 nm with the minimum threshold current at 670 nm. Devices with a 10-[mu]m diameter have threshold currents as low as 1.25 mA at room temperature (297 K) and 0.8 mA at 250 K. In addition, a single predetermined linear polarization state is found, independent of the lasing mode order and operating temperature.

Science.gov (United States)

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of ...

International Nuclear Information System (INIS)

(1976). USSR Lupin, VM Ramazanov, PE Tomskij Gosudarstvennyj Univ.

International Nuclear Information System (INIS)

The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)

Energy Technology Data Exchange (ETDEWEB)

A gain-guiding tapered stripe laser was fabricated using a Ga/sub 0.5/In/sub 0.5/P/(Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 /sup 0/C, an aspect ratio of about 2, and an astigmatism near 25 ..mu..m. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 /sup 0/C with a constant output power of 3 mW.

International Nuclear Information System (INIS)

We study quasifinite highest weight modules over the supersymmetric extension of the W_1_+_#infinity# algebra on the basis of the analysis by Kac and Radul. We find that the quasifiniteness of the modules is again characterized by polynomials, and obtain the differential equations for highest weights. The spectral flow, free field realization over the (B, C)-system, and the embedding into gl(#infinity#vertical stroke #infinity#) are also presented. (orig.).

Science.gov (United States)

The mz8310 device support module provides support for the following record types: event, pulseCounter, pulseDelay, and pulseTrain. No driver support is needed. Up to 4 mz8310 modules are supported. Each 8310 module contains 10 channels, which are identified as signals O,...9. Each channel is individually configurable. Each mz83 10 has two Am9513 Timing Controller chips. Each Am9513 has 5 counters.

Energy Technology Data Exchange (ETDEWEB)

Surface films on iron formed in methanol solutions containing various amounts of water with or without 0.1 kmol/m{sup 3} LiClO4 have been analyzed by in-situ ellipsometry and ex-situ XPS. It was found that surface films having refractive indices n2 and absorption coefficients k2 in the range of 1.8-2.2 and 0.25-0.3, respectively, are formed on iron at potentials of the passive state. The values of n2 and k2 for passive films on iron obtained in the methanol are smaller than those of passive films formed in aqueous solutions. The refractive index n2 of the surface film on iron in the methanol became larger with increasing water or dissolved oxygen content. In the deaerated methanol with the water content less than 0.07%, a surface film having a refractive index of 1.7 was formed on iron, and XPS spectrum of this film showed a spectrum which was similar to that obtained from iron methoxide Fe(OCH3)3 powder. By the addition of water or oxygen into methanol and also by anodic polarization, ...

Energy Technology Data Exchange (ETDEWEB)

An all solid-state kicker pulser for a proton radiography system has been designed. Multiple solid-state modulators stacked in an inductive-adder configuration are utilized in this kicker pulser design. Each modulator is comprised of multiple metal-oxide-semiconductor field-effect transistors (MOSFETs) which quickly switch the energy storage capacitors across a magnetic induction core. Metglas is used as the core material to minimize loss. Voltage from each modulator is inductively added by a voltage summing stalk. A circuit model of a prototype inductive adder kicker pulser modulator has been developed to predict the performance of the pulser modulator. The modeling results are compared with experimental data.

Energy Technology Data Exchange (ETDEWEB)

Four 10 MW, highly-stabilized power supply modules have been installed at the National High Magnetic Field Laboratory in Tallahassee, FL, to energize water-cooled, resistive, high-field research magnets. The power supply modules achieve a long term current stability if 10 ppM over a 12 h period with a short term ripple and noise variation of <10 ppM over a time period of one cycle. The power supply modules can operate independently, feeding four separate magnets, or two, three or four modules can operate in parallel. Each power supply module consists of a 12.5 kV vacuum circuit breaker, two three-winding, step-down transformers, a 24-pulse rectifier with interphase reactors, and a passive and an active filter. Two different transformer tap settings allow rated dc supply output voltages of 400 and 500 V. The rated current of a supply module is 17 kA and each ...

International Nuclear Information System (INIS)

The subject is reviewed in sections, entitled: introduction (historical); sources of short-lived radionuclides; carbon-11; nitrogen-13; oxygen-15; fluorine-18; bromine-77; iodine-123; astatine-211; other radionuclides (including Ga-67, Ga-68, In-111, In-113m, Tc-99m, and Pb-203). (U.K.).

Science.gov (United States)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, ...

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit ...

International Nuclear Information System (INIS)

The structural changes attendant on intermartensitic transformation in a Ni-Mg-Ga shape memory alloy are considered using magneto-optical visualization with the help of ferrite-garnet monocrystalline films. It is established that on the intermartensitic transformation the complete reorganization of martensite macrostructure fails. Martensite crystals resulted from the basic transformation change somewhat their sizes on intermartensitic transition. The existence of large-scale labyrinth magnetic domain structure is revealed

International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

International Nuclear Information System (INIS)

We use the Generalized Quasi-Chemical Approach (GQCA) combined with ab initio ultrasoft pseudopotential calculations within density functional theory in order to obtain the structural and electronic properties of Al_xGa_yIn_1_-_x_-_yX (X=As, P or N) quaternary alloys in the zincblende structure. Results for the bond lengths show that their variations with composition are approximately linear and that they do not deviate much from the values of the corresponding binary compounds. For the variation of the band gaps, we obtain a bowing parameter b=0.26 eV for the (Ga_0_._4_7In_0_._5_3As)_z(Al_0_._4_8In_0_._5_2As)_1_-_z quaternary alloy lattice matched to InP, in very good agreement with experimental data. In the case of AlGaInN, a bowing parameter of 0.22 eV is obtained for zincblende AlGaInN lattice matched to GaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

British Library Electronic Table of Contents (United Kingdom)

Three field experiments were conducted at the research fields of Plant Protection Research Institute, Iran, at different locations in 2004-2005 to study the efficacy of different broadleaved herbicides to control weeds in wheat. Treatments were the full-season hand weeded and weed-infested controls, and post-emergence applications of florasulam plus flumetsulam at 8.75, 10.50, and 12.25ga.i./ha, 2,4-D plus carfentrazone-ethyl at 210, 245, 280, and 490ga.i./ha, bromoxynil plus MCPA at 75, 100, and 150ga.i./ha, 2,4-D at 560, 720, and 1120ga.i./ha, tribenuron methyl, and 2,4-D plus MCPA. Herbicides were applied at wheat tillering stage. Naturally occurring broadleaved weed populations were used in experiments. Results indicated that bromoxynil plus MCPA at 150ga.i./ha, 2,4-D plus MCPA, and 2,...

British Library Electronic Table of Contents (United Kingdom)

The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...

Energy Technology Data Exchange (ETDEWEB)

GaN and Al{sub 1{minus}x}Ga{sub x}N films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10{sup 9} ohm-cm and 10{sup {minus}3}--10{sup {minus}8} cm{sup 2}/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

Energy Technology Data Exchange (ETDEWEB)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K{sub {alpha}} X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K{sub {alpha}} X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the ...

Energy Technology Data Exchange (ETDEWEB)

Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear ...

Energy Technology Data Exchange (ETDEWEB)

The properties and low pressure organometallic vapor phase epitaxy of Ga{sub x}In{sub 1{minus}x}P/(AlGa){sub 0.5}In{sub 0.5}P quantum well (QW) laser diode heterostructures with Al{sub 0.5}In{sub 0.5}P cladding layers, and having wavelength 614 < {lambda} < 690 nm, are described. At longer wavelengths ({lambda} > 660 nm), threshold current densities under 200 A/cm{sup 2} and efficiencies greater than 75% result from a biaxially-compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.

Science.gov (United States)

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser ...

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

Science.gov (United States)

This paper proposes an optimization algorithm to reduce the distortion produced in the loop-filter of Continuous-Time Sigma-Delta Modulators. The aim of the algorithm is to find the loop-filter implementation that minimizes distortion at the output of the modulator, by modifying the output swing of every integrator. The algorithm is implemented in Matlab as an evolutive searching. During each step of the searching, the algorithm evaluates the harmonical distortion of a tone when it is applied to the modulator with a certain loop-filter implementation. The output of the algorithm is an optimum linear state-space representation of the loop-filter. This particular state-space representation leads to minimum distortion at the output of the modulator when the loop-filter is implemented with some specific circuitry previously defined. As long as the search is of evolutive type, the solution represents a local ...

Science.gov (United States)

A plan to diffuse instructional modules for the preparation of transportation professionals is presented, based on research and demonstration projects sponsored by the Urban Mass Transportation Administration (UMTA). The diffusion/adoption plan involves: developing instructional modules; disseminating the modules to professors teaching transportation courses at the college level; promoting the use and adoption of the modules; and evaluating and revising the plan. Transportation educators teach in a variety of disciplines (e.g., engineering, public administration, urban planning, and technology). Eight design and evaluation criteria for the instructional modules are listed, along with the procedures used by West Virginia University in developing the five instructional modules. The diffusion strategy involves repackaging UMTA research findings, change agents, and ...

Energy Technology Data Exchange (ETDEWEB)

The General Purpose Light Source VME module is an integral part of every front-end micro in the NSLS control system. The board incorporates features such as a video character generator, clock signals, time-of-day clock, a VME bus interrupter and general-purpose digital inputs and outputs. This module serves as a valuable diagnostic and real-time display tool for the micro development as well as for the final operational systems. This paper describes the functions provided by the board for the NSLS micro control monitor software.

Energy Technology Data Exchange (ETDEWEB)

The expected interstellar antiproton spectrum arising from cosmic-ray interactions in the Galaxy is recalculated, and the modulation of both antiprotons and protons is calculated using a two-dimensional modulation model incorporating gradient and curvature drifts and a wavy current sheet as well as the usual diffusion, convection, and energy-loss effects. Significant differences in the antiproton/proton ratio for different solar magnetic field polarities are predicted as well as a 'low-energy' component for antiprotons below about 1 GeV. 28 refs.

International Nuclear Information System (INIS)

In previous work, on cooling from 300 K to 10 K the elastic moduli for both #alpha#- and #delta#-Pu dropped 30%. This large change may reflect effects of 5f-electron localization. In this work, the elastic moduli at ambient temperature of several Pu-Ga alloys were measured using resonant ultrasound spectroscopy (RUS). The strong temperature dependence of the bulk and shear modulus and the temperature independence of Poisson's ratio was confirmed and the upper temperature limit for #alpha#-Pu was extended to 360 K. Measurements of the time dependence of the shear moduli of Pu and Pu-2.36 at.% Ga were determined with high precision as a function of time and temperature. Using a model for time dependence of point defects, we determined the exponential time constant at ambient temperature for such variations. The low temperature results are consistent with Fluss .

International Nuclear Information System (INIS)

We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence '' hot '' implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900"oC up to 20-90 nm in those annealed at 1100"oC. For the samples annealed at 900"oC a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed. (author)

Science.gov (United States)

Homogenous Al{sub x}Ga{sub 1{minus}x}P liquid phase epitaxial layers have been obtained with the temperature difference method under controlled vapor pressure (TDM-CVP). Very clear fine structures near band edge in photoluminescence spectra have been observed at 77 K for the first time. Photoluminescence measurement results confirmed that the free exciton recombination without phonon assistance plays an important role in the luminescence at 77 K and becomes dominant at room temperature. It is considered that Zero-phonon assisted free exciton recombination is intensified by some local perturbations to electrical potentials against carriers or excitons introduced by Al atoms in Al{sub x}Ga{sub 1{minus}x}P layers, which can give momentum change necessary for recombination.

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

Energy Technology Data Exchange (ETDEWEB)

Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.

International Nuclear Information System (INIS)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.

Science.gov (United States)

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow rid structures were 300 A/cm{sup 2} and 330 A/cm{sup 2} for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87--89% and the internal losses of 7--10 cm{sup {minus}1} were obtained.

CERN Document Server

This paper proposes the use of particle swarm optimization method (PSO) for finite element (FE) model updating. The PSO method is compared to the existing methods that use simulated annealing (SA) or genetic algorithms (GA) for FE model for model updating. The proposed method is tested on an unsymmetrical H-shaped structure. It is observed that the proposed method gives updated natural frequencies the most accurate and followed by those given by an updated model that was obtained using the GA and a full FE model. It is also observed that the proposed method gives updated mode shapes that are best correlated to the measured ones, followed by those given by an updated model that was obtained using the SA and a full FE model. Furthermore, it is observed that the PSO achieves this accuracy at a computational speed that is faster than that by the GA and a full FE model which is faster than the SA and a full FE model.

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

International Nuclear Information System (INIS)

Collection, analysis and quantification of human factor data are important compositions of human reliability analysis (HRA) and probabilistic risk assessment (PRA). Various human factor databases have been set up, but there are comparatively little human factor data management systems which can be uses for collection, classification, analysis, calculation and predication of the human factor data. Therefore, the human factor data management system for Daya Bay NPP is developed, with the following three modules and four databases: original data module, computing module, introduced data module, and basic database, other data source of the plant, external database and introduced database. The foundational problems about human factor data and the systemic structure and function are described. The data structure in the database is also discussed, because it is of the most importance in the system

Science.gov (United States)

... 36 7 Corrugated Steel Pipe Concept Layout--Elevation ..... 37 viii ... revetment. 3. Land Use ... Corner modules and capping blocks are available. ...

UK PubMed Central (United Kingdom)

There is considerable evidence that purines are vasoactive molecules involved in the regulation of blood flow. Adenosine is a well known vasodilator that also acts as a modulator of the response to...Full Text Available

UK PubMed Central (United Kingdom)

The purpose of this study is to explain the unplanned longitudinal dose modulations that appear in helical tomotherapy (HT) dose distributions in the presence of irregular patient breathing....Full Text Available

Science.gov (United States)

The performance of a 42/28 V, 175 W, 50 kHz pulse-width modulated buck dc/dc switching power

Science.gov (United States)

... revetment construction, water well drilling, mobile facility assets construction using ... five days, and establish site layout for the follow-on RH ... modules. ...

Energy Technology Data Exchange (ETDEWEB)

In the rf-driven free-electron laser (FEL) at the Los Alamos National Laboratory, there are two pulsed-power rf modulators as sources for two tandem, side-coupled 20-MeV linear accelerators. The rf power used to control the cavity fields is supplied by two 5.5-MW modulating anode klystrons operating at a center frequency of 1300.2 MHz. The modulation of the 125 kV klystron is achieved by using a triode switch tube that provides a pulse width up to 300 ..mu..s and a pulse repetition rate up to 10 Hz. This paper describes the present configuration of these two duplicate systems and presents plans for meeting the requirements of future rf FEL experiments at Los Alamos. 12 refs., 5 figs.

British Library Electronic Table of Contents (United Kingdom)

Glucagon plays critical roles in regulating glucose homeostasis, mainly by counteracting the effects of insulin. Consequently, the dysregulated glucagon secretion that is evident in type 2 diabetes has significant implications in the pathophysiology of the disease. Glucagon secretion from pancreatic -cells has been suggested to be modulated by blood glucose, signals from the nervous system and endocrine components. In addition to these regulators, intraislet factors acting in a paracrine manner from neighbouring -cells are emerging as central modulator(s) of -cell biology. One of the most important of these paracrine factors, insulin, modulates glucagon secretion. Indeed, the -cell-specific insulin receptor knockout (IRKO) mouse manifests hypersecretion of glucagon in the postprandial stag...

Energy Technology Data Exchange (ETDEWEB)

With the ubiquitous availability of commercial VME modules and interface chips many experiments in all branches of Experimental Physics are turning to VME as the module packaging and backplane protocol of choice for application specific modules. The current VME backplane, electrical, and mechanical standards are clearly lacking when it comes to implementing the analogue and digital front end modules that Physics experiments rely on to provide the needed high speed and intelligent solutions to their data collection requirements. To address these needs the European ESONE and American VME-P committees are collaborating with the ANSII and ISO standards committees, and the VME VITA/VSO manufacturers associations, to define standard extensions to the VME protocols for such HEP needs as ``sparse data scans``, standard uses and implementations of previously user defined pins and connectors, standardization of ...

International Nuclear Information System (INIS)

The Four years of the IMPACT, 'Integrated Modular Plant Analysis and Computing Technology' project Phase 1 have been completed. The verification study of Severe Accident Analysis Code SAMPSON prototype developed in Phase 1 was conducted in two steps. First, each analysis module was run independently and analysis results were compared and verified against separate-effect test data with good results. Test data are as follows: CORA-13 (FZK) for the Core Heat-up Module; VI-3 of HI/VI Test (ORNL) for the FP Release from Fuel Module; KROTOS-37 (JRC-ISPRA) for the Molten Core Relocation Module; Water Spread Test (UCSB) for the Debris Spreading Model and Benard's Melting Test for Natural Convection Model in the Debris Cooling Module; Hydrogen Burning Test (NUPEC) for the Ex-Vessel Thermal Hydraulics Module; PREMIX, PM10 (FZK) for the Steam Explosion ...

Science.gov (United States)

switch when this cavity matching condition is determined. This results is a ... MHz offset is provided by an acousto-optic modulator. (AOM). The AOM will be shut ...

UK PubMed Central (United Kingdom)

CAAX proteins are widely involved in global cellular functions such as proliferation, differentiation, and carcinogenesis. As an important modulator of biological activity, signal transduction via protein...Full Text Available

International Nuclear Information System (INIS)

This paper describes the benchmark analysis results of Rapid Boron Dilution (RBD) transient tests. The RBD transient tests were carried out at University of Maryland. The data were obtained as a part of the International Standard Problem No. 43, ISP-43, for code assessment. Nuclear Power Engineering Corporation (NUPEC) participated the benchmark analysis of ISP443 with the PLASHY code. The PLASHY code is a general purpose single-phase fluid analysis code, developed by NUPEC. The code has two types of module, Cartesian/Cylindrical coordinate system module and BFC module. In order to reduce the computing time, the Cartesian/Cylindrical coordinate system module was employed. All calculations were done on a parallel computer, IBM SP2, by using the 12 of 76 CPU units. (author)

Energy Technology Data Exchange (ETDEWEB)

Variations in thermal energy costs of single module solar central receiver systems using one, two, three, and four aperture cavity receivers at a location corresponding to Barstow, California are investigated for nominal power ratings ranging from 100 MWt to 900 MWt. Also considered are the effects on energy costs of changes in plant latitude, and the energy cost impact of the replacement of the single module design with multiple connected modules producing the same thermal power. The results, obtained with the aid of the DELSOL2 computer program, indicate that solar central receiver plant energy costs are insensitive functions of power level, latitude, and configuration. No clear cost of energy advantage between single and multiple modules is seen.

International Nuclear Information System (INIS)

The electronic band structure, transport properties, and lattice dynamics in AuX_2 (X = Al, Ga and In) under high pressure have been extensively studied with full potential linearized augmented plane wave and pseudopotential plane wave methods. The theoretical results for the electronic band structure and Fermi surface reveal pressure-induced electronic topological transitions (ETTs) in AuGa_2 and AuIn_2, while they are absent in AuAl_2, in excellent agreement with the experimental observations. Moreover, calculations of the transport properties at different pressures reveal subtle changes in the band structure close to the Fermi surface of the three intermetallic compounds. It is clear that the anomalies in transport properties are due to ETTs. Interestingly, a pressure-induced soft transverse acoustic (TA) phonon mode is identified only in AuGa_2. The TA phonon instability at the Brillouin zone boundary L point might be ...

Energy Technology Data Exchange (ETDEWEB)

The temperature dependence of T/sub 1/ spin-lattice relaxation time on /sup 51/V, /sup 69/Ga, /sup 71/Ga and Knight shift on /sup 51/V and /sup 29/Si nuclei in polycrystalline V/sub 3/Si, V/sub 3/Ga, V/sub 3/Ge and in the monocrystal V/sub 3/Si in normal state is investigated. For V/sub 3/Si and V/sub 3/Ga a rapid growth (T/sub 1/T)/sup -1/ is observed with temperature decrease while for V/sub 3/Ge the maximum (T/sub 1/T)/sup -1/ at T approximately equal to 60 K has been found. The temperature dependence peculiarities have been discussed on the basis of theoretical models available and zone structure calculations for A-15 compounds. The T/sub 1/ anisotropy and possibility of its experimental discovery are considered. Anisotropic contribution in (T/sub 1/T)/sup -1/ and contributions of d states of different symmetries into the electron state density at the Fermi level are estimated for V/sub 3/Si from ...

Energy Technology Data Exchange (ETDEWEB)

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the extended defects and on ...

UK PubMed Central (United Kingdom)

Genetic algorithms (GA) were used to develop specific copper metal-ligand force field parameters for the MM3 force field, from a combination of crystallographic structures and ab initio...Full Text Available

Science.gov (United States)

We report the growth and fabrication of midwave infrared InAs/GaSb strain layer superlattice (SLS) detectors. Growth of alternate interfaces leads to a reduced strain between the GaSb buffer and SLS ({delta}a{sub parallel}/a=-5x10{sup -4}), enabling the growth of active regions up to 3 {mu}m (625 periods). The structural, optical, and electrical properties of the active region were characterized using x-ray crystallography and photoluminescence, respectively. p-i-n detectors were grown using 625 periods of 8 ML (monolayer) InAs/8 ML GaSb as the active region. The {lambda}{sub cutoff} for the detectors was 4.6 {mu}m with a conversion efficiency of 32% at V{sub b}=-0.2 V. Detectivity was obtained using noise power spectral density measurements under 300 K 2{pi} field of view illumination and was equal to 5.2x10{sup 10} and 3x10{sup 10} cm Hz{sup 1/2}/W (V{sub b}=-0.02 V, T=80 K) in the white noise and 1/f noise limit (at 50 ...

International Nuclear Information System (INIS)

Liquid metal ion sources (LMISs) with Ga as ion species are widely used in focused ion beam (FIB) technology for micromachining and surface treatment on the sub-micron and nano-scale. Key features of a LMIS for investigating mechanical properties and 3D-microfabrication of materials are long life-time, high brightness, stable ion current and a highly effective milling ability for the material to be modified. In order to increase the material removal rate, heavier ions than Ga and their clusters should be applied. Bismuth (Bi) is the heaviest, non-radio-active element in the periodic table, is non-toxic and exhibits a low melting point. We have thus produced a long-life (about 1000 h) Bi LMIS with a good beam performance, applicable in any FIB system. Since Bi is the only element in this source, it is not necessary to separate it from other ions by a mass filter. Investigation of the sputtering rate of NiTi shape memory alloys using ...

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction ...

Science.gov (United States)

A high power AlGaInP single quantum well graded index separate confinement heterostructure. It comprises a substrate and a multiplicity of layers deposited thereon comprising a single Ga{sub x}In{sub x}P quantum well where x has a value from about 0.4 to about 0.6; multiple graded index regions on both sides of the quantum well and cladding layers adjacent to each graded region of the well, the graded region comprising Al{sub y}(Ga{sub 1{minus}y}){sub 0.5}In{sub 0.5}P quaternary alloy; wherein the value of y in the graded region varies from about 0.2 at the quantum well/graded region interface to up to about 0.6 for the cladding layers/graded index regions; the heterostructure having a low broad area threshold current with pulsed thresholds in the range from about 1 to about 2 Amps/cm{sup 2} and a differential efficiency of from about 20 to about 60 percent.

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with ...

Energy Technology Data Exchange (ETDEWEB)

The following work deals with the realization, characterization and modeling of GaInP / AlGaInP high power semiconductor laser diodes in the visible wavelength range. In addition to the exploration and optimization of efficiency, temperature stability and maximum output power of multi-mode lasers especially methods for longitudinal and lateral mode stabilization of high power laser diodes have been investigated. Although often the focus of optimization is on the threshold current density, in this work the performance of the laser diode for an operation point around 1 Watt under continous wave operation is regarded as the figure of merit. It turns out that low carrier densities are key for an efficient reduction of the heterobarrier leakage currents. In addition, large optical cavity structures with low internal losses enable high external quantum efficiencies even for long cavities. Finally high laser effiency as well as an efficient cooling ...

International Nuclear Information System (INIS)

Excitonic transitions in metalorganic vapor phase epitaxially grown In_xGa_1_-_xP/In_0_._4_8(Al_0_._7Ga_0_._3)_0_._5_2P strained single quantum-well structures are characterized using low-temperature photoluminescence and photoluminescence excitation (PLE) spectroscopies. The structures consist of several uncoupled quantum wells with thicknesses between 1.2 and 11.3 nm, and compositions x of 0.48 (nominally lattice matched) and 0.56 (#approx#0.6% biaxial compressive strain). The photoluminescence spectra exhibit intense peaks over the wavelength range 550--650 nm, with linewidths between 7 and 23 meV depending on the well thickness. The PLE spectra reveal strong heavy-hole and light-hole transitions, as well as higher-order (n=2) transitions in the thicker wells. The heavy-hole/light-hole splitting shows little dependence on well thickness in the strained structures, indicating a relatively large conduction band offset of ...

Science.gov (United States)

Near-ideal Schottky barrier contacts to n-type Al0.22Ga0.78N have been developed by a two-step surface treatment technique. Plasma etching of the AlxGa1-xN surface prior to Schottky metal deposition, combined with sequential chemical treatment of the etched surface, holds promise for developing high quality low-leakage Schottky contacts for low noise applications and for recessed gate high electron mobility transistors. In this work, the effect of postetch chemical treatment of the n-type Al0.22Ga0.78N surface on the performance of the Ni/Au based Schottky contact has been investigated. Three different types of chemical treatment: viz, reactive ion etching, reactive ion etching plus dipping in hot aqua regia, and reactive ion etching plus dipping in hot KOH, are studied. Detailed current-voltage studies of three different surface treated diodes and a comparison with as-deposited diodes reveal significant improvement in the ...

International Nuclear Information System (INIS)

We have investigated the correlation between V-shaped defect formation and the optical properties of AlGaN/(In)GaN multiple quantum wells (MQWs) grown under different growth conditions and then demonstrated the characteristics of fabricated ultraviolet (UV) light emitting diodes (LEDs). From the temperature-dependent photoluminescence (PL) measurement, the internal quantum efficiency for 300 K was obtained as 43.6% for a sample with a low density of V-defects in a MQW and 13.7% for a sample with a high density of V-defects. The carrier lifetime based on the time resolved PL measurement at room temperature was 0.32 ns for a sample with a high density of V-defects and 1.26 ns for a sample with a low density of V-defects. And we also found that the density of V-defects affected the external quantum efficiency and wall plug efficiency of the fabricated UV LEDs. (fast track communication)

International Nuclear Information System (INIS)

The localized Pt deposition on Si by 30 keV Ga"+ focused ion beam (FIB), 10 keV electron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be"2"+ microprobe with a beam spot size of 80 nm. The distribution of deposited Pt, Ga from the ion beam itself, and C from the precursor gas was obtained at and nearby the deposited areas by micro-RBS spectra and RBS mapping. All of the beam processed areas showed a uniform Pt distribution at the deposited areas. The amount of Pt atoms increased with the increase in ion or electron dose due to the decomposition of precursor gas. The thickness of Pt layer by EB is considerably less than that by FIB due to the reduced deposition rate. Ga atoms from the center of processed areas partly redeposited at and nearby the FIB processed areas within #approx#3 #mu#m. The Ga incorporation by dual beam processing was reduced ...

International Nuclear Information System (INIS)

Russian 1977. p. 178. USSR Feofilov, GA Denisov, AE Kolalis, RP Sadkovskij,

International Nuclear Information System (INIS)

The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.

Energy Technology Data Exchange (ETDEWEB)

In the last two years, rapid progress has been made in the energy conversion efficiencies of GaAs solar cells fabricated from molecular beam epitaxy (MBE) material. The efficiencies of cells fabricated from MBE material are now comparable with those fabricated from metal-organic chemical vapor deposition material, even for cells of dimension 2 cmx4 cm. This paper reviews the progress in MBE cell efficiencies. Also discussed is the role oval defects play in GaAs diode and solar cell performance. (orig.).

International Nuclear Information System (INIS)

Using the slow electrons spectrometer one can get information on the surface structure, its element composition, chemical bonds, adsorption phenomena, electron state density and surface oscillation. We have developed the methods and created the apparatus that makes it possible to investigate the electron backscattering by solid surface. We have studied the electron scattering by the polycrystalline and monocrystalline. GaAs surface in the energy range of 0 to 9 eV. The FWHM of electron energy distribution function was 70 meV. (author).

Energy Technology Data Exchange (ETDEWEB)

While bone metastases producing photon deficient defects on bone scintigraphy have previously been reported, this finding has not been emphasized for hepatocellular carcinoma (HCC). Furthermore, ''filling-in'' of such photon deficient defects with 67Ga at skeletal sites of metastatic HCC has not been described. In this case report, the combination of a photon deficient defect on bone scintigraphy and avid accumulation of 67Ga in this same area was of value in confirming the diagnosis of metastatic HCC.

International Nuclear Information System (INIS)

The A-15 compounds with the highest critical temperatures and critical fields are stable only at high temperatures and sometimes are not stable at any temperature. Fabrication of such materials thus necessarily involves the creation and manipulation of metastable phases. It follows that the bronze matrix technique now under development for Nb_3Sn- and V_3Ga-based composite superconductors is not suitable for high-T/sub c/ materials of the Nb_3 (Al, Ge, Ga, Si) family. Alternative technologies will be necessary for such materials. Efforts to develop suitable alternatives, using Nb_3Al, are described.

Science.gov (United States)

This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 ..mu..m and Al/sub 0.1/Ga/sub 0.9/P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.

Energy Technology Data Exchange (ETDEWEB)

High-power diode laser arrays emitting at 690 nm have been developed for solid-state laser pumping. The laser diode bars (fill factor [approx]0.7) have been fabricated from single quantum well AlGaInP-based heterostructures. Using silicon microchannel heatsinks, a record high 360 W/cm[sup 2] per emitting aperture is achieved under continuous wave operation.

Energy Technology Data Exchange (ETDEWEB)

The aim of this research is the design and implementation of a decentralized power system stabilizer (PSS) capable of performing well for a wide range of variations in system parameters and/or loading conditions. The framework of the design is based on Fuzzy Logic Control (FLC). In particular, the neuro-fuzzy control rules are derived from training three classical PSSs; each is tuned using GA so as to perform optimally at one operating point. The effectiveness and robustness of the designed stabilizer, after implementing it to the laboratory model, is investigated. The results of real-time implementation prove that the proposed PSS offers a superior performance in comparison with the conventional stabilizer. (author)

Science.gov (United States)

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This ...

International Nuclear Information System (INIS)

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ...

Science.gov (United States)

Two plasma chemistries, i.e., CH{sub 4}/H{sub 2}/Ar and Cl{sub 2}/Ar, were compared for the etching of InGaP, AlInP, and AlGaP under inductively coupled plasma (ICP) conditions. While the etching with CH{sub 4}/H{sub 2}/Ar discharges appears to be ion driven, Cl{sub 2}/Ar discharges showed an additional strong chemical enhancement. The highest etch rate ({approximately}1 {mu}m/min) for InGaP was achieved at high ICP source power ({ge}750 W) with the Cl{sub 2}/Ar chemistry. Cl{sub 2}/Ar discharges provided very smooth surfaces in all three materials with root-mean-square roughness measured by atomic force microscopy around 2 nm. This result may be due to the efficient ion-assisted product desorption in this chemistry. The etched near-surface region of InGaP ({approximately}100 {Angstrom}) with Cl{sub 2}/Ar maintained almost the same stoichiometry as that of the unetched control. By contrast, the CH{sub ...

UK PubMed Central (United Kingdom)

Metabotropic glutamate receptor 2/3 (mGluR2/3) agonists were shown previously to nonselectively decrease both cocaine- and food-maintained responding in rats. mGluR2 positive allosteric modulators (PAMs)...Full Text Available

CERN Document Server

We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal analyses, we elucidate how the spin modulation in semiconductor lasers can improve performance, as compared to the conventional (spin-unpolarized) counterparts. We reveal that the spin-polarized injection can lead to an enhanced bandwidth and desirable switching properties of spin-lasers.

Energy Technology Data Exchange (ETDEWEB)

Computer simulations and experiments indicate that we can shape the infrared picosecond pulses of the Mark III FEL in amplitude, frequency, and phase. Strongly modulated fundamental and second harmonic pulses have been generated by operating the Mark III FEL in the regime of strong sideband growth. In this paper, we present the results of simulations and experiments for second harmonic generation with fundamental inputs from 2 to 3 {mu}m.

CERN Document Server

We determine the structure of the total homology groups of exotic Springer fibers as affine Weyl group representations. As applications, we provide single top/socle property of standard modules in the exotic Deligne-Langlands correspondence (except for root of unity case), an analogue of Verma's theorem, the coincidence of analytic/geometric gradings in the $C ^{\\infty}$-realization of anti-spherical modules of graded Hecke algebras of type $\\mathsf{BC}$ with unequal parameters, among others.

British Library Electronic Table of Contents (United Kingdom)

We study the influence of Sr substitutions on the structural counterpart of the MI transition of Formula Not Shown . When Sr content increases, the commensurate CDW modulation of pure Formula Not Shown is changed into an incommensurate short range modulation that we attribute to a charge ordering of the Formula Not Shown electrons. The same features are observed in S deficient samples.

UK PubMed Central (United Kingdom)

BackgroundTo compare two strategies of dynamic intensity modulated radiation therapy (dIMRT) with 3-dimensional conformal radiation therapy (3DCRT) in the setting of hypofractionated...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

Energy Technology Data Exchange (ETDEWEB)

KM3NeT is a future deep-sea research infrastructure hosting a neutrino telescope with a volume of at least one cubic kilometer to be constructed in the Mediterranean Sea. The experiment aims to detect high-energy cosmic neutrinos using a 3D array of optical modules to collect the Cherenkov light induced by charged particles in the water. Upward going muons and showers produced in neutrino interactions with the surrounding matter will allow the search and study of possible sources of extra-terrestrial neutrinos. The design of optical modules makes an important impact on the performance and cost of the KM3NeT project. Several different optical module configurations are under consideration; based on glass pressure spheres containing: a large (10 in.) hemispherical photomultiplier tube (with a multi-anode version as an option); 25-31 3 in. photomultiplier tubes, or a crystal scintillator-based hybrid device (X-HPD). The ...

International Nuclear Information System (INIS)

One of the refinements of modern Nuclear Medicine is the capacity of providing dynamic and kinetics images of the administered radiopharmaceutical, reproducing its transport mechanism, action sites, receptor binding and excretion route. With the continues technological advances new radiopharmaceuticals have been developed in order to express higher specificity and with higher characters of affinity between receptor/complex. One radiopharmaceutical is formed by a reagent or bio molecule that has in its structure a radioisotope, that has the objectives of carrying it to the organs of affinity or to benign or malign tumoral process. Somatostatin inhibits the growing and proliferation of several tumoral cells. Somatostatin analogs bind to somatostatic receptors that are expressed in different kind of neoplasia DOTA-LANREOTIDE (DOTALAN) is an octapeptide analog to somatostatin. The interest of labeling the bio conjugate with gallium-67 in Nuclear Medicine comes from its physical, chemical ...

Science.gov (United States)

We have been piloting web-based multimedia learning modules (MLMs), developed by the Physics Education Research Group at the University of Illinois at Urbana Champaign (UIUC), as a "prelecture assignment" in several introductory physics courses at California State Polytechnic University at Pomona. In this study, we report the results from a controlled study utilizing modules on electricity and magnetism as a part of a blended hybrid-online course. We asked students in the experimental section to view the MLMs prior to attending the face-to-face class, and to make sure this would not result in additional instructional time, we reduced the weekly class time by one-third. We found that despite reduced class time, student-learning outcomes were not hindered; in fact, the implementation of the UIUC MLMs resulted in a positive effect on student performance on conceptual tests and classroom discussion questions. (Contains 4 figures and 1 table.)

British Library Electronic Table of Contents (United Kingdom)

The generalized demodulation time-frequency analysis is a novel signal processing method, which is particularly suitable for the processing of multi-component amplitude-modulated and frequency-modulated (AM-FM) signals as it can decompose a multi-component signal into a set of single-component signals whose instantaneous frequencies own physical meaning. While fault occurs in gear, the vibration signals measured from gearbox would exactly display AM-FM characteristics. Therefore, targeting the modulation feature of gear vibration signal in run-ups and run-downs, a fault diagnosis method in which generalized demodulation time-frequency analysis and envelope order spectrum technique are combined is put forward and applied to the transient analysis of gear vibration signal. Firstly the multi-...

Science.gov (United States)

A 100-bit slitlike aperture array spatial light modulator has been developed using 8.8/65/35 PLZT for a high-bit-density 1-D hologram memory. The most desirable characteristics, such as distortion-free diffraction-limited Fourier transform patterns and good uniformity of displayed bit patterns over 100 bits, have been realized. The lowest SNR was 86, and rise time and fall time have been 30 microsec and 8 microsec, respectively, at 190-V halfwave voltage. One-dimensional holographic storage experiments have been successfully performed using this PLZT spatial light modulator. PMID:20216813

International Nuclear Information System (INIS)

In the frame of the Primary Wall Module prototype manufacturing for ITER, a consistent R and D phase was conducted in order to identify the industrial allowable tolerances and manufacturing problems which would occur when joining pieces by HIPping process during the PW module manufacturing. The purpose of this development was to give as industrial as possible manufacturing routes for joining together large Stainless Steel or DS-Copper pieces with Stainless Steel tubes and for bonding Beryllium tiles onto a curved component surface. The study concerned surface preparations, allowable gaps and joint geometry, Beryllium tile geometry, Titanium interlayer thickness, etc. This R and D phase also allowed the development and validation of different ultrasonic inspection tools needed for plate-plate, tube-plate, edge to edge plate bonding.

Energy Technology Data Exchange (ETDEWEB)

A cooperative effort of the Center for Solar Energy and Hydrogen Research (ZSW) and Phototronics Solartechnik GmbH (PST) aimed at the transfer of highly efficient solar cells developed on a laboratory scale, to large-area thin-film solar modules suitable for production. This work was based on research and development at the Institute for Physical Electronics (IPE) of Stuttgart University and ZSW on one hand, and on the know-how of PST in regard to large-area module fabrication on the other hand. The various thin-film layers of the cells and modules comprize molybdenum as rear contact, copper-indium(gallium)-diselenide (CIGS) as absorber material, the combination of cadmium sulphide (CdS) and ZnO as window layer. To produce these layers on large areas (30x30 cm{sup 2}), equipment was constructed and procedures were developed. Monolithic series connection of cells, used in other thin-film technologies, was studied and ...

Energy Technology Data Exchange (ETDEWEB)

Changes of /sup 67/Ga uptake in the lungs and changes of components of the so-called ground substance of the lung connective tissues of mice were followed for 7 weeks after the start of bleomycin (BLM) administration (20 mg/kg body weight IP, twice weekly for 5 weeks; this treatment induced fibrosis of the lung). /sup 67/Ga uptake of the lung was elevated at 1 week, and reached a maximum at 5 weeks (3.00+-0.11% dose/g lung), and then decreased slightly at 7 weeks. The uronic acid content in the 1.2 M NaCl-soluble fraction, which contained predominantly heparan sulfate (HS), was increased at 1 week, peaked at 3 weeks, and then remained unchanged up to 7 weeks. This pattern was similar to that of /sup 67/Ca acumulation in the lungs. The uronic acid content of the 0.4 M NaCl-fraction, which contained predominantly hyaluronic acid (HA), was decreased at 1 week, but increased to a maximum at 3 weeks, then decreased to about the initial level at 5 ...

Energy Technology Data Exchange (ETDEWEB)

Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to n type Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of {approximately} 6 {times} 10{sup {minus}6} {Omega}-cm{sup 2} and {approximately} 1 {times} 10{sup {minus}5} {Omega}-cm{sup 2} have been obtained on Al{sub 0.5}In{sub 0.5}P and Ga{sub 0.5}In{sub 0.5}P respectively (both doped to {approximately} 2 {times} 10{sup 18} cm{sup {minus}3}). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al{sub 0.5}In{sub 0.5}P and n-Ga{sub 0.5}In{sub 0.5}P are presented.