Energy Technology Data Exchange (ETDEWEB)

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of ...

International Nuclear Information System (INIS)

The information of phase transformation is attained by in situ XRD experiments leading to the knowledge of topological threshold in GeS2-Ga2S3 glasses. The turning point of phase transformation behavior is demonstrated to be glasses containing 14-15 mol% Ga2S3. To interpret it a network demixing model is further improved and proposed for the structure of these ternary or quasi-binary chalcogenide glasses. For the nearest-neighbor coordination environment of glass with a transitional composition of 85.7 mol% (6/7) GeS2.14.3 mol% (1/7) Ga2S3, six-coordinated [S3Ga-X-GaS3] units (X=S or None) are well isolated by the [GeS4] structures, which contributes to the decreasing of precipitation of Ga2S3 crystals in (100-x)GeS2-xGa2S3 (x?14.3) glasses corresponding to the experimental ...

Energy Technology Data Exchange (ETDEWEB)

The goal of this project was to develop a new technology for preparing samples for transmission electron microscopy (TEM) on the basis of ion fine beam processing. For this purpose processes of ion-beam-assisted removal (sputtering), separation, sample handling and ion-beam-assisted chemical etching as well of system-inherent components were examined. As an alternative to a Ga-source a liquid-metal ion source based on a AuGeSi alloy was developed, characterised and used in the FIB 4400. [German] Aufgabe des Projektes war die Entwicklung einer neuen Technologie zur Probenpraeparation fuer die Transmissions-Elektronenmikroskopie (TEM) auf der Basis der Ionenfeinstrahlbearbeitung. Dazu wurden Prozesse der ionenstrahlgestuetzten Abtragung (Sputtern), der Abscheidung, des Probenhandling, des ionenstrahlgestuetzten chemischen Aetzens sowie systemeigener Komponenten untersucht. Als Alternative zur Ga-Quelle ...

International Nuclear Information System (INIS)

Full text: It is known that the ion implantation of germanium single crystals at room temperature results in drastic alteration of the germanium surface and the formation of cellular relief. Voids were found into the near-surface damage layer. The intersection of these voids with the germanium surface, as result of sputter etching, forms cellular relief. However, exact mechanism responsible for formation of the voids is not known. A 10 and 30 keV Ga"+ irradiation of Ge #left brace#100#right brace# crystal at room temperature was carried out using a focused ion beam (FIB) system with a dose in the range 0.5x10"1"2 to 1.5x10"1"4 ion/cm"2. The topology of the modified germanium surface and the structure of the radiation damage was studied using imaging facilities of the FIB systems and transmission electron microscopy. The strong cellular structure of Ge was observed after an ion dose ...

Energy Technology Data Exchange (ETDEWEB)

Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI{sub 3} or BBr{sub 3} discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates ({gt}6000thinsp{Angstrom}thinspmin{sup {minus}1}) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI{sub 3} or BBr{sub 3} content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO{sub 2} and SiN{sub x} of {ge}8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, ...

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 ...

Energy Technology Data Exchange (ETDEWEB)

An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for ...

Energy Technology Data Exchange (ETDEWEB)

Magneto-striction and magnetic form factors in 5f itinerant antiferromagnets UNiGa{sub 5} and UPtGa{sub 5} are studied by means of neutron scattering. Remarkable magneto-striction was observed around T{sub N}, indicating large spin-orbit coupling in the itinerant system. The orbital magnetic moment is found to be strongly suppressed due to the hybridization of uranium 5f with Ga-4p electron.

International Nuclear Information System (INIS)

The temperature dependence of T_1 spin-lattice relaxation time on "5"1V, "6"9Ga, "7"1Ga and Knight shift on "5"1V and "2"9Si nuclei in polycrystalline V_3Si, V_3Ga, V_3Ge and in the monocrystal V_3Si in normal state is investigated. For V_3Si and V_3Ga a rapid growth (T_1T)"-"1 is observed with temperature decrease while for V_3Ge the maximum (T_1T)"-"1 at T approximately equal to 60 K has been found. The temperature dependence peculiarities have been discussed on the basis of theoretical models available and zone structure calculations for A-15 compounds. The T_1 anisotropy and possibility of its experimental discovery are considered. Anisotropic contribution in (T_1T)"-"1 and contributions of d states of different symmetries into the electron state density at the Fermi level are estimated for V_3Si from T_1 measurements.

Energy Technology Data Exchange (ETDEWEB)

Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

Energy Technology Data Exchange (ETDEWEB)

This paper proposes the design of LQ-PSS (linear quadratic power system stabilizer) for improving power system stability using genetic algorithm(GA). We are turned weighting matrices of LQ-PSS using GA. To evaluate the usefulness of the proposed method, we performed the nonlinear simulation on a single machine infinite system. As results on a single machine infinite system. As results of the simulation, the proposed method shows the better control performance than CPSS(conventional power system stabilizer) in terms of settling time and damping effects. (author). 7 refs., 7 figs., 3 tabs.

Energy Technology Data Exchange (ETDEWEB)

The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

Energy Technology Data Exchange (ETDEWEB)

Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the ...

Science.gov (United States)

This article examines problems relating to the calculation of the position of regions of limited solubility of components in the liquid state for four-component systems. An approach based on the use of criterion of stability with respect to diffusion for obtaining equations which describe the region of stratification of the liquid phase in a four-component system is used. The authors used a ES-1020 computer to analyze the critical phenomena in Al-In-P-Sb, Al-Ga-In-P, Al-Ga-In-As, and In-Ga-As-P systems. The position of the spinode in the phase diagram of a four-component system is obtained.

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the ...

Energy Technology Data Exchange (ETDEWEB)

A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

International Nuclear Information System (INIS)

The effect of swelling of crystalline Ge irradiated at room temperature with 30 keV Ga"+ focused ion beam (FIB) was studied by means of in situ FIB imaging, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The swelling occurred in the surface region of amorphous damage layer which was formed during ion irradiation. The degree of swelling reaches values up to 10 times for an implantation dose of #approx#10"1"7 ions/cm"2. Cross-secitonal TEM examination showed that the swelling is due to formation of a porous layer with a honeycomb structure. (author). 8 refs., 4 figs.

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

Energy Technology Data Exchange (ETDEWEB)

A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.

International Nuclear Information System (INIS)

The impulse method has been used to study "9"3Nb (nuclear quadrupole resonance (NQR) parameters quadrupole connection constant, spin-lattice and spin-spin relaxation times) in binary intermetallic compounds of Nb_3X (x=Al, Ga, Ge, Sn, Pt, Os, Ir, Sb) and in some ternary phases on the basis of the Nb_3Al compound. The discussion on experimental data obtained is carried out in approximation of a tight connection for d-electrons.

Science.gov (United States)

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser ...

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 ...

Energy Technology Data Exchange (ETDEWEB)

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the ...

Energy Technology Data Exchange (ETDEWEB)

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

International Nuclear Information System (INIS)

The variation in the superconducting properties of various binary alloys of transition metal-germanium systems was surveyed by studying sputter deposited samples prepared under various conditions. The primary interest has been to study the formation of the stoichiometric A-15 compounds T_3Ge.

Energy Technology Data Exchange (ETDEWEB)

The aim of this research is the design and implementation of a decentralized power system stabilizer (PSS) capable of performing well for a wide range of variations in system parameters and/or loading conditions. The framework of the design is based on Fuzzy Logic Control (FLC). In particular, the neuro-fuzzy control rules are derived from training three classical PSSs; each is tuned using GA so as to perform optimally at one operating point. The effectiveness and robustness of the designed stabilizer, after implementing it to the laboratory model, is investigated. The results of real-time implementation prove that the proposed PSS offers a superior performance in comparison with the conventional stabilizer. (author)

International Nuclear Information System (INIS)

The K"+- and K"-meson cumulative production cross sections are measured at 119"0 in the laboratory system on nuclei Be, Al, Cu and Ta bombarded by 10 GeV protons. Spectra of the K"-mesons consisting of only sea quarks show universal features characteristic of the spectra of cumulative particles, which contain valence quarks. Evidence is obtained for the fact that the energy density in a flucton can exceed the mean nuclear density by an order of magnitude.

International Nuclear Information System (INIS)

The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is ...

International Nuclear Information System (INIS)

The semiconducting compound CuGa_xIn_1_-_xSe_2 crystallizes in the chalcopyrite structure (space group Ianti 42d, Z=4). The X-ray powder data for x=1, 0.75, 0.6, 0.5, 0.4, 0.25 and 0.0 have been collected and it is found that the lattice parameters a and c and their ratio c/a vary linearly with x. Thus the composition of any chalcopyrite in the pseudo-binary system CuGaSe_2 and CuInSe_2 can be obtained from the accurate lattice parameters. The crystallite size determined from the (112) plane is minimum for x=0.50 (#propor to#1000 A) and away from x=0.50 it increases. A value of u=0.240 (5) has been established for fixing, the Se-atom positions in the CuGa_0_._5In_0_._5Se_2 solid solution. The JCPDS Diffraction File No. for CuInSe_2 is 40-1487 and for CuGa_0_._5In_0_._5Se_2 is 40-1488. (orig.).

Science.gov (United States)

... AFM DOD AFR T. O FED DCAC MIL ANSIX AFSC JANAP DIAM GA RADC FIPS SDSP STDN AFNAG MM NORAD JSC NORADM ME NORADR ...

Science.gov (United States)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO ...

International Nuclear Information System (INIS)

The Gamma Physics (GaP) program of physical phenomena investigation is proposed on #gamma#p, #gamma#e and #gamma##gamma# colliders at TeV energies. The program contains specialized software (CompHEP system) created for automation of particle interaction processes calculations in the framework of various gauge models. Preliminary physical results are presented (heavy quark production, W, Z production, supersymmetry etc.), and further software development is suggested. (R.P.) 22 refs., 8 figs., 4 tabs.

Energy Technology Data Exchange (ETDEWEB)

The radioisotope production facilities and programs of the 86-Inch Cyclotron are reviewed in this presentation. The 86-Inch Cyclotron is designed to accelerate protons to a maximum energy of 22 MeV for internal targets. These protons are used to bombard metals that are electroplated, potted or soldered to water-cooled plates. Additionally, metals and inorganic compounds are bombarded in water-cooled tube targets. High radioisotope production rates are obtained by beam currents as large as 3 mA. Production rates for /sup 11/C, /sup 57/Co, /sup 67/Ga, /sup 68/Ge, /sup 109/Cd, and other isotopes are presented. The production of /sup 11/C for the carboxyl labeling of amino acids in cooperation with Oak Ridge Associated Universities is discussed. The 86-Inch Cyclotron is used for those programs requiring a larger beam current than is available from commercial cyclotrons.

International Nuclear Information System (INIS)

It has recently been shown that the superconducting properties of Nb-base A-15 compounds, A_3B, are severely degraded when exposed to high-energy (E>1 MeV) neutron irradiation at ambient reactor temperatures. In each case, superconducting transition temperatures, Tsub(c), and the Bragg Williams order parameters, S, were observed to decrease steadily with irradiations in excess of 10"1"8 nvt. During irradiation the A-15 structure is retained and subsequent isothermal annealing restores almost completely the compound's original Tsub(c) value. In this letter a correlation between B atom diameter and the recovery rates of Tsub(c) for the irradiated materials Nb_3Ge, Nb_3Ga, Nb_3Al and Nb_3Sn is reported. (Auth.).

Energy Technology Data Exchange (ETDEWEB)

A new recurrent neural network power system stabilizer (RNNPSS) based on genetic algorithm (GA) was presented. It shows faster convergence than the linear quadratic regulator (LQR) stabilizer in a multi-machine power system, because the proposed GA based neural network was first trained off-line to determine the optimal values of the learning rates. Otherwise, the RNNPSS consists of just two layers. As such, the time consumption of the damping oscillations is lower than with conventional methods. In addition, the operating range of the RNNPSS is greater than that of the LQR and conventional three layer neural networks, since the RNNPSS can greatly reduce system complexity and effectively damp system oscillations. 9 refs., 7 figs.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

A KEK-PS experiment E337 `Angular correlation of intermediate mass fragments emitted from the target multifragmentation reactions with 12 GeV protons` is an extension of the E288 performed a few years ago. The E288 revealed that the proton-induced target multifragmentation reactions at 12 GeV showed quite interesting phenomena such as 70 degree peaking angular distributions for intermediate mass fragments. In December, 1955, the test experiment with 12 GeV protons was started at KEK using this newly constructed counter array of 37 Bragg Curve Counters. The main production experiment was performed in April and May in 1996 after debugging the new counter system and DAQ system, as well as EP1-B beam line. Data with Au, Tm, Sm and Ag targets were successfully accumulated. The data are in the analysis stage, and several interesting features of high energy nuclear reactions have already ...

International Nuclear Information System (INIS)

Liquid metal ion sources (LMISs) with Ga as ion species are widely used in focused ion beam (FIB) technology for micromachining and surface treatment on the sub-micron and nano-scale. Key features of a LMIS for investigating mechanical properties and 3D-microfabrication of materials are long life-time, high brightness, stable ion current and a highly effective milling ability for the material to be modified. In order to increase the material removal rate, heavier ions than Ga and their clusters should be applied. Bismuth (Bi) is the heaviest, non-radio-active element in the periodic table, is non-toxic and exhibits a low melting point. We have thus produced a long-life (about 1000 h) Bi LMIS with a good beam performance, applicable in any FIB system. Since Bi is the only element in this source, it is not necessary to separate it from other ions by a mass filter. Investigation of the sputtering rate of NiTi shape memory ...

CERN Document Server

The Electromagnetic Calorimeter (ECAL) of the AMS-02 experiment is a lead-scintillating fibers sampling calorimeter characterized by high granularity that allows to image the longitudinal and lateral showers development, a key issue to provide high electron/hadron discrimination. The light collection system and the FE electronics are designed to let the calorimeter operate over a wide energy range from few GeV up to 1 TeV. A full-scale prototype of the e.m. calorimeter was tested at CERN in October 2001 using electrons and pions beams with energy ranging from 3 to 100 GeV. Effective sampling thickness, linearity and energy resolution were measured. (8 refs).

International Nuclear Information System (INIS)

The A dependence of cumulative pion production yield cross sections on the basis of the comparison of the data on relative pion yields on Be,C,Al,Ti,Mo and W nuclei at the 159 deg angle laboratory system for the incident proton energy E_0 from 25 to 62 GeV is considered. The regular A dependence on cumulative variable X is noted. The results are compared with the data at E_0< 10 GeV. A possible interpretation of the observed behaviour on the basis of the hypothesis of the flucton mechanism of the pion production in the cumulative region is discussed. 15 refs.; 4 figs.

Energy Technology Data Exchange (ETDEWEB)

A solid-state precipitation process was used to prepare superconducting tapes containing an A15 phase, V/sub 3/Ga or Nb/sub 3/Al, in a ductile niobium or vanadium containing BCC matrix. Ingots weighing as large as 30 to 50 gms of V-(14 approx. 19 at. %) Ga and Nb-(13 approx. 22 at. %) Al were prepared by arc-melting, homogenized, quenched, warm-rolled over 99% into tape, and aged at temperatures in the range 600/sup 0/C to 1000/sup 0/C to precipitate the superconducting A15 phase. The features demonstrated by the process are very attractive for practical applications. In the V-Ga system, transmission electron microscopy (TEM) studies revealed the A15 precipitates in an elongated form. However, for the Nb-Al samples, deformed and aged at 750/sup 0/C, TEM studies revealed A15 precipitation in fine equi-axed particles which formed as a semi-continuous network over sub-grain boundaries formed by the ...

CERN Document Server

PAMELA is a satellite borne experiment designed to study with great accuracy cosmic rays of galactic, solar, and trapped nature in a wide energy range (protons: 80 MeV-700 GeV, electrons 50 MeV-400 GeV). Main objective is the study of the antimatter component: antiprotons (80 MeV-190 GeV), positrons (50 MeV-270 GeV) and search for antimatter with a precision of the order of $10^{-8}$). The experiment, housed on board the Russian Resurs-DK1 satellite, was launched on June, 15 2006 in a $350\\times 600 km$ orbit with an inclination of 70 degrees. The detector is composed of a series of scintillator counters arranged at the extremities of a permanent magnet spectrometer to provide charge, Time-of-Flight and rigidity information. Lepton/hadron identification is performed by a Silicon-Tungsten calorimeter and a Neutron detector placed at the bottom of the device. An Anticounter system is ...

Energy Technology Data Exchange (ETDEWEB)

Lithium ion conducting glass ceramics composed of the crystalline conductive phase Li{sub 1.4}Al{sub 0.4}(Ge{sub 1-x}Ti{sub x}){sub 1.6}(PO{sub 4}){sub 3}(x=0-1.0) with the Nasicon-type structure have been synthesized and characterized by DTA, X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and complex impedance techniques. The experimental results indicated that the glass ceramics were mainly composed of solid solution Li(Ge{sub 1-x}Ti{sub x}){sub 2}(PO{sub 4}){sub 3} formed by LiGe{sub 2}(PO{sub 4}){sub 3} and LiTi{sub 2}(PO{sub 4}){sub 3} in the whole x range and showed conductivity over 10{sup -4} S/cm at room temperature. The maximum room temperature lithium ion conductivity of 6.21x10{sup -4} S/cm with an activation energy as low as 0.32 eV was obtained for the Li{sub 1.4}Al{sub 0.4}(Ge{sub 0.67}Ti{sub 0.33}){sub 1.6}(PO{sub 4}){sub 3} treated at 950 C for 18 h. ...

International Nuclear Information System (INIS)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

Energy Technology Data Exchange (ETDEWEB)

This study focuses the granitoids of center-southern portion of Guyana Shield, southeastern Roraima, Brazil. The region is characterized by two tectonic-stratigraphic domains, named as Central Guyana (GCD) and Uatuma-Anaua (UAD) and located probably in the limits of geochronological provinces (e.g. Ventuari-Tapajos or Tapajos-Parima, Central Amazonian and Maroni-Itacaiunas or Transamazon). The aim this doctoral thesis is to provide new petrological and lithostratigraphic constraints on the granitoid rocks and contribute to a better understanding of the origin and geo dynamic evolution of Guyana Shield. The GCD is only locally studied near to the UAD boundary, and new geological data and two single zircon Pb-evaporation ages in mylonitic biotite granodiorite (1.89 Ga) and foliated hastingsite-biotite granite (1.72 Ga) are presented. These ages of the protholiths contrast with the lithostratigraphic picture in the other areas of Cd (1.96-1.93 ...

British Library Electronic Table of Contents (United Kingdom)

Timely detection of the pneumatic system problems is important in industry. Many techniques have been employed to solve this problem. In this paper, Genetic Algorithm (GA) based optimal configuration of neural networks is proposed for fault diagnostic of bottle filling systems. Back-propagation is used for neural networks algorithm. The back-propagation algorithm had six inputs and one output. A fitness function was designed to the minimize execution time of ANN model by keeping the number of hidden layer(s) and nodes as low as possible while the mean square error of estimated output error is minimized. The designed GA-ANN combination and the graphical user interface (GUI) eliminate the trial and error process for selection of the fastest and most accurate configuration. The performance of...

Energy Technology Data Exchange (ETDEWEB)

This paper describes the effects of motion of beam components (quads, rf cavities and dipoles) on the beam and considers the properties of a compensation system from the perspective of users. The system departs from standard practice in considering active perturbation of the electron beam to verify beam corrections. The effects of local closed orbit perturbations to direct undulator beams at different experimental setups are also considered.

Science.gov (United States)

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al{sub 0.5}Ga{sub 0.5}As and In{sub 0.53}Ga{sub 0.47}As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, {ital E}({Gamma}{sub 1{ital c}}) of AlP, {ital E}({ital L}{sub 1{ital c}}) of AlAs, and {ital E}({ital L}{sub 1{ital c}}) of AlSb are discussed and ...

International Nuclear Information System (INIS)

One of the refinements of modern Nuclear Medicine is the capacity of providing dynamic and kinetics images of the administered radiopharmaceutical, reproducing its transport mechanism, action sites, receptor binding and excretion route. With the continues technological advances new radiopharmaceuticals have been developed in order to express higher specificity and with higher characters of affinity between receptor/complex. One radiopharmaceutical is formed by a reagent or bio molecule that has in its structure a radioisotope, that has the objectives of carrying it to the organs of affinity or to benign or malign tumoral process. Somatostatin inhibits the growing and proliferation of several tumoral cells. Somatostatin analogs bind to somatostatic receptors that are expressed in different kind of neoplasia DOTA-LANREOTIDE (DOTALAN) is an octapeptide analog to somatostatin. The interest of labeling the bio conjugate with gallium-67 in Nuclear Medicine comes from its physical, chemical ...

Energy Technology Data Exchange (ETDEWEB)

The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.

International Nuclear Information System (INIS)

Deep level effects in GaAs MOSFET have been characterised in the ohmic channel using DLTS, low frequency excess noise and dispersion technique. An isothermal multi exponential curve fitting method has been devised and implanted into the DLTS system. Multi exponential curve fitting method used to decompose a multi exponential transient into its constituents so that the peak signature can be better characterised for the case whereas several peaks are closely spaced. Low frequency excess noise and dispersion techniques also confirm the trap in signature of the same traps observed in the DLTS measurements. (author)

International Nuclear Information System (INIS)

Recent progress with the (Al_xGa_1_-_x)_0_._5In_0_._5P alloy system has resulted in laser diodes which operate at room temperature at wavelengths below 640 nm. OMVPE is used to grow the multi-quantum-well devices in a graded-index separate-confinement configuration. Laser threshold currents as low as 75 mA have been achieved.

Energy Technology Data Exchange (ETDEWEB)

The difficulty in making good Ohmic contact at the interfaces with p-doped ZnSe is an important problem hindering the realization of blue-light-emitting diode lasers based on the II-VI semiconductor technology. So far no metal or semiconductor material has been found to have a low enough barrier at the (001) interface with ZnSe. A possible solution to this problem is the insertion of a so-called {ital barrier-reduction layer} at the interface with ZnSe. We have investigated the interface formation energies and valence-band offsets at the (001) interface between Al{sub x}Ga{sub 0.5{minus}x}In{sub 0.5}P and ZnSe. The results of our calculations show the existence of a strong interdependence between the valence-band offset and the interface geometric structure. The interface is found to have structural and electronic similarities to the GaAs-ZnSe(001) system. The very low values obtained for the valence-band offset confirm the ...

Energy Technology Data Exchange (ETDEWEB)

A single crystalline ternary nanostructure having the formula A.sub.xB.sub.yO.sub.z, wherein x ranges from 0.25 to 24, and y ranges from 1.5 to 40, and wherein A and B are independently selected from the group consisting of Ag, Al, As, Au, B, Ba, Br, Ca, Cd, Ce, Cl, Cm, Co, Cr, Cs, Cu, Dy, Er, Eu, F, Fe, Ga, Gd, Ge, Hf, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Tc, Te, Ti, Tl, Tm, U, V, W, Y, Yb, and Zn, wherein the nanostructure is at least 95% free of defects and/or dislocations.

International Nuclear Information System (INIS)

Superconductivity of binary alloys spanning the A-15 compounds V_3Si, V_3Ge, V_3Ga, and V_3Al and the pseudobinary derivatives of these stoichiometric compounds was surveyed by studying samples prepared by rf-sputtering from alloy cathodes. The possible formation of the hypothetical A-15 binaries ''V_3P,'' ''V_3B,'' and ''V_3C'' and their pseudobinary formation with V_3Si was also explored. Efforts to form these hypothetical alloys were not successful. The T/sub c/'s were measured resistively and the structure and lattice constants were determined by x-ray analysis. A maximum T/sub c/ of 11.7"0K was obtained for A-15 V_3Al, and the importance of a suitable deposition temperature and high sputtering pressures was examined. It is proposed that large variations of T/sub c/ among pseudobinary alloys imply a rapid variation of the density of states at the Fermi level.

CERN Document Server

The antiproton-nuclei annihilation at the momentum range from 0.70 GeV/c to 2.50 GeV/c

Science.gov (United States)

Superconductivity of A-15 Compounds in the-System Nb-Ge-Sn Synthesized by Chemical Vapor Deposition, -. J. Engelhardt and G. W. Webb, ...

International Nuclear Information System (INIS)

The decay of "1"0"1Mo to levels in "1"0"1Tc has been studied using the three-parameter (#gamma#-#gamma#-t) coincidence system of HpGe-HpGe detectors. From the coincidence data, the new decay scheme was constructed. The previously reported 104.70, 105.95 and 774.15 keV #gamma# rays were observed, and have been assigned to the decay scheme for the first time. A newly observed 1508.01 keV #gamma# ray has also been assigned to the scheme for the first time. The intensities of #beta#"- and the values of log ft to most levels were calculated

Energy Technology Data Exchange (ETDEWEB)

Energy flows in deep inelastic electron-proton scattering are investigated at a centre-of-mass energy of 296 GeV for the range Q{sup 2}{>=}10 GeV{sup 2} using the ZEUS detector. A comparison is made between events with and without a large rapidity gap between the hadronic system and the proton direction. The energy flows, corrected for detector acceptance and resolution, are shown for these two classes of events in both the HERA laboratory frame and the Breit frame. From the differences in the shapes of these energy flows we conclude that QCD radiation is suppressed in the large-rapidity-gap events compared to the events without a large rapidity gap. (orig.)

DEFF Research Database (Denmark)

The recently observed X-ray synchrotron emission from four supernova remnants (SNRs) has strengthened the evidence that cosmic-ray electrons are accelerated in SNRs. We show that if this is indeed the case, the local electron spectrum will be strongly time-dependent, at least above roughly 30 GeV. The time dependence stems from the Poisson fluctuations in the number of SNRs within a certain volume and within a certain time interval. As far as cosmic-ray electrons are concerned, the Galaxy looks like actively bubbling Swiss cheese rather than a steady, homogeneously filled system. Our finding has important consequences for studies of the Galactic diffuse gamma-ray emission, for which a strong excess over model predictions above 1 GeV has recently been reported. While these models relied on an electron injection spectrum with index 2.4 (chosen to fit the local electron flux up to 1 TeV), we show that an electron injection ...

CERN Document Server

Assessment of the radiological impact of the 50 GeV BPS on its environment

International Nuclear Information System (INIS)

The purpose of this work was to investigate the optical properties of several high T/sub c/ compounds in the form of sputtered films. The measurements are used toward this end: optical absorptance (using a calorimetric technique near 4.2K), which yields (after Kramers-Kronig analysis) the complex dielectric function, and thermoreflectance (which measures the change in reflectance in the optical range when a 1 to 10_0K temperature wave is applied), performed at two ambient temperatures (80 and 300_0K), yielding the differential dielectric function. The sputtered films included Nb"3Ge, Nb"3Al, V"3Ga and Nb"3Ir. It is noted that Nb"3Ir is not a high T/sub c/ superconductor. The thermoreflectance on the bulk samples V"3Si, V"3Ge and single crystal Cr"3Si were not performed because the samples were not in the form of thin films. The thermomodulation studies are correlated with the absorptance measurements in comparison to band ...

International Nuclear Information System (INIS)

The use of workstations, controllers or embedded systems and their applications have become much more relevant than previously. PC-based systems, a cooker programmer, applications of, for example, Prolog machines, Unix and Ada papers, Robotics and Automation are typical examples of this. The three keynote addresses of this symposium have as their subjects the most spectacular microcomputer fields and are presented by leading experts. The papers presented cover most of the traditional interests of Euromicro. Special emphasis is given to contributions on the use of workstations and personal computers, on RISC and GaAs and on transputers.

Energy Technology Data Exchange (ETDEWEB)

System-level-operational testing of the ETX-II test-bed electric vehicle is described and the results discussed. Because the traction battery is a major factor in the performance of an electric vehicle, previously reported work on the sodium-sulfur battery designed for use with the ETX-II is reviewed in detail. Chassis dynamometer performance of the test-bed vehicle met or exceeded design goals and compared reasonably well with SIMPLEV computer modeling results. Areas are identified wherein further work is needed to establish a firmer basis for comparison of the simulation and the observed results.

International Nuclear Information System (INIS)

This paper describes Automatic Refueling Planning System (ARPS) for a nuclear power station using Genetic Algorithms (GA) and a Simulated Annealing (SA). ARPS has been developed and verified by applying to the Fugen nuclear power station (NPS), which is a 165MWe, heavy water-moderated, boiling light water-cooled, pressure tube-type reactor developed by JNC utilizing mainly uranium and plutonium mixed oxide (MOX) fuel. Fuel loading patterns have been managed independently in the Fugen NPS since the initial core. A planning of an adequate fuel loading pattern on each operational cycle needs one to two months even for expert core management engineers, for the reason that it has multi-objective optimization and nonlinear problems. In order to achieve the optimum fuel loading pattern and a fuel cost reduction, ARPS has been developed by JNC and CRC Solutions Corporation for the last five years. ARPS firstly generates several thousand fuel loading ...

Energy Technology Data Exchange (ETDEWEB)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Energy Technology Data Exchange (ETDEWEB)

Amorphous metals have an atomic structure resembling that of glass, and have high strength, toughness, and excellent magnetic properties for transformer applications. This type of metal has the potential to reduce the core losses of electromagnetic apparatus by 70-75% compared to the best grain-oriented silicon iron currently used. If all 4 million distribution transformers now in service in Canada were replaced by the more efficient amorphous units, it is estimated that over 5.25 billion kWh of energy could be saved annually. The experience of the General Electric (GE) Company and other researchers with operation of amorphous transformers is described. GE first tried operating amorphous metal transformers on a utility distribution system in April 1982. The shell-type cruciform design showed stable, low-loss performance over eight years of service. GE and the Electric Power Research Institute cooperated ...

Energy Technology Data Exchange (ETDEWEB)

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

Science.gov (United States)

Excitonic transitions in metalorganic vapor phase epitaxially grown In[sub [ital x

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations that incorporate free energy of the vapor phase in order to determine the initial growth process of cubic GaN on GaN (001)-(4x1). The results suggest that a N-adsorbed structure appears at the initial growth stage and then Ga adsorbs on the N-adsorbed GaN (001)-(4x1) surface. Considering this process, we performed Monte Carlo simulations. The results suggest that the maximum point of Ga coverage after supplying a Formula Not Shown monolayer of atoms shifted toward a Ga-rich condition from V/III=1.0.

Energy Technology Data Exchange (ETDEWEB)

This paper presents a design of fuzzy power system stabilizer (FPSS) using adaptive evolutionary computation (AEC). We have proposed an adaptive evolutionary algorithm which uses a genetic algorithm (GA) and an evolution strategy (ES) in an adaptive manner in order to take merits of two different evolutionary computations. FPSS shows better control performances than conventional power system stabilizer (CPSS) in three-phase fault with heavy load which is used when tuning FPSS. To show there robustness of the proposed FPSS, it is applied to damp the low frequency oscillations caused by disturbances such as three-phase fault with normal and light load, the angle deviation of generator with normal and light load and the angle deviation of generator with heavy load. Proposed FPSS shows better robustness than CPSS. (author). 15 refs., 13 figs., 3 tabs.

Science.gov (United States)

Utility interest has recently increased in potential future nuclear units that combine the characteristics of smaller size, greater simplicity, and more passive safety features. In response to such interest, General Electric (GE) began development in 1982 of a 600-MW(electric) reactor with simplified power generation and safety systems. This paper provides an overview of the simplified boiling water reactor (SBWR) design, with emphasis on the thermal-hydraulic aspects of the design. The SBWR is a natural circulation reactor requiring no pumps to circulate the water through the core.

International Nuclear Information System (INIS)

A ''coherent flucton'' nuclear model is proposed which provides for new possibilities for particle scattering studies on nuclei. It is based on the data of nuclear matter density distribution and is used for calculating the ground state energy of Fermi system terminals. The ''coherent flucton'' model is applied to the distribution of 1 GeV protons on "2"8Si, "3"2S, "4"0Ca, "4"8Ca, "5"8Ni, "2"0"8Pb nuclei. The calculations by the model agree well with experimental data.

CERN Document Server

Motivated by recent anomalous CDF data on $Wjj$ events, we study a possible explanation within the framework of the two-Higgs doublet model. We find that a charged Higgs boson of mass $\\sim$ 140 GeV with appropriate couplings can account for the observed excess. In addition, we consider the flavor-changing neutral current effects induced at loop level by the charged Higgs boson on the $B$ meson system to further constrain the model. Our study shows that the like-sign charge asymmetry $A_{s\\ell}^b$ can be of ${\\cal O}(10^{-3})$ in this scenario.

International Nuclear Information System (INIS)

Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 A within 3000 A wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier-carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in ...

Energy Technology Data Exchange (ETDEWEB)

Pretreatment of biosorbents have been suggested to modify the surface characteristics which could improve biosorption process. Stable cesium biosorption was studied in continuous fixed-bed column by chemically modified biosorbents. Two kinds of brown algae (Sargassum glaucescens and Cystoseira indica) were treated with chemical agents including formaldehyde (FA), glutaraldehyde (GA), potassium hexacyanoferrate (HCF), FA and HCF, and GA and HCF. The highest biosorption capacity (BC) was obtained from C. indica treated with FA (63.5 mg Cs/g biomass) and S. glaucescens treated with FA and HCF (62 mg Cs/g biomass). To study the effect of the best treatments on the BC, the concentration of each treatment agent was decreased. With decreasing FA agent for C. indica treatment, the BC dropped. Treatment of 1 g S. glaucescens biomass with 2.2 g FA and then 0.18 g HCF resulted in the highest BC (73.08 mg Cs/g dry biomass) which was 35.8 times higher than ...

International Nuclear Information System (INIS)

New ternary compounds on the ytterbium base YbPd_2Ge, YbPd_2Si, YbPdGe, YbPdSi, YbPtGe, YbPd_2Ge_2 and known compound YbPdSi_2 were obtained and investigated. Results of measuring the electric resistivity and magnetic susceptibility in the 4.2-300 K range are presented. It is found that YbPdGe, YbPtGe, YbPd_2Ge at low temperatures have magnetic phase transitions, investigations of which testify to dominant contribution of ferromagnetic ordering. The investigation results testify also to substantial effect of ytterbium crystalline environment on the physical properties of compounds under study.

Energy Technology Data Exchange (ETDEWEB)

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

Energy Technology Data Exchange (ETDEWEB)

We discuss the initial development of a concentrator device based on the GaInP/GaAs monolithic tandem cell structure. The very high one-sun efficiency of this device, coupled with its characteristic low operating current, make this a promising candidate for use under high concentration. Test results for a prototype device are presented. This device achieves an efficiency of 29.5% at a concentration of 102 suns.

Energy Technology Data Exchange (ETDEWEB)

Short communication.

International Nuclear Information System (INIS)

The decay of "1"0"1Mo to levels in "1"0"1Tc has been studied using the three-parameter (#gamma#-#gamma#-t) coincidence system of HpGe-HpGe detectors. According to the coincidence data, the decay scheme was modified. The positions of 221.80, 318.00, 377.90, 452.50, 515.42, 1011.05 and 1759.72 keV transitions have been arranged again, the transition positions of 104.70, 105.95 and 774.15 keV gamma-rays have been assigned for the first time, the positions of 169.00, 590.91, 980.52 and 1431.68 keV transitions have been reconfirmed, the 1508.01 keV gamma-ray was observed simultaneously for the first time and its transition position has been assigned. The #beta#-intensities and the values of log ft of most levels were calculated. (author)

Science.gov (United States)

The strain dependence of Si-Ge interdiffusion in epitaxial Si/Si{sub 1-y}Ge{sub y}/Si heterostructures on relaxed Si{sub 1-x}Ge{sub x} substrates has been studied using secondary ion mass spectrometry, Raman spectroscopy, and simulations. At 800 and 880 deg. C, significantly enhanced Si-Ge interdiffusion is observed in Si/Si{sub 1-y}Ge{sub y}/Si heterostructures (y=0.56, 0.45, and 0.3) with Si{sub 1-y}Ge{sub y} layers under compressive strain of -1%, compared to those under no strain. In contrast, tensile strain of 1% in Si{sub 0.70}Ge{sub 0.30} layer has no observable effect on interdiffusion in Si/Si{sub 0.70}Ge{sub 0.30}/Si heterostructures. These results are relevant to the device and process design of high mobility dual channel and heterostructure-on-insulator metal oxide semiconductor field effect transistors.

CERN Document Server

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2p sub 3 sub / sub 2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga sub 2 O sub 3 powder were used. A separate study aiming the identification of the GaAs ...

Energy Technology Data Exchange (ETDEWEB)

This work is a theoretical investigation on the physical properties of semiconductor-based two-dimensional photonic crystals, in particular for what concerns systems embedded in planar dielectric waveguides (GaAs/AlGaAs, GaInAsP/InP heterostructures, and self-standing membranes) or based on macro-porous silicon. The photonic-band structure of photonic crystals and photonic-crystal slabs is numerically computed and the associated light-line problem is discussed, which points to the issue of intrinsic out-of-lane diffraction losses for the photonic bands lying above the light line. The photonic states are then classified by the group theory formalism: each mode is related to an irreducible representation of the corresponding small point group. The optical properties are investigated by means of the scattering matrix method, which numerically implements a variable-angle-reflectance experiment; comparison with experiments is ...

Energy Technology Data Exchange (ETDEWEB)

The detailed features of the calculated energy-level schemes and of thesingle-particle, orbit-occupancy properties of the low-lying levels of the/ital N/=50 isotones /sup 80/Zn, /sup 81/Ga,/sup 82/Ge, /sup 83/As, /sup 84/Se,/sup 85/Br, /sup 86/Kr, and /sup 87/Rb arepresented and discussed. These results are obtained with a new effectiveHamiltonian operator obtained empirically from an iterative fit to experimentalenergies taken from all experimentally studied (/ital A/=82--96)/ital N/=50 nuclei. The model space for the calculations consists ofactive 0/ital f//sub 5/2/, 1/ital p//sub 3/2/,1/ital p//sub 1/2/, and 0/ital g//sub 9/2/ proton orbits relativeto a nominal /sup 78/Ni core. This space is truncated internally byrestricting the number of particles excited from the negative-parity orbitsinto the /ital g//sub 9/2/ orbit to be no greater than four. The typicalstructures predicted for these lighter /ital N/=50 isotones are found tobe dominated ...

International Nuclear Information System (INIS)

A new magnet power supply system for J-PARC 50GeV Synchrotron is proposed as solutions both in the power capacity and in the precision at the same time. The developed 10MW class magnet power supply consists of the advanced self-commutated current-source type converter (ACSC) using the new device IEGT rated at 4500V-2100A and the ''hybrid filter'' including the variable impedance filter with the equivalent 16 kHz switching. With 1/16 scale-model system using a prototype bending magnet, the experimental results showed the current ripple less than 1 x 10"-"6 and the tracking error less than #+-#0.5 x 10"-"4. (author)

International Nuclear Information System (INIS)

The Cs-137 radioactivity of a neutron-irradiated nuclear fuel sample has been measured by means of a micro-gamma scanning system which is associated with a high purity Ge detector. Subsequently the burn-up has been calculated from the Cs-137 radioactivity data and then compared with the values from the theoretical computation and chemical anaylsis. The burn-up value obtained with the gamma-scanning system seems to be reasonably agreeable with that of the chemical anaylsis provided that the statistical error in the experiments is taken into account. It is revealed that the burn-up data from the theoretical approach is slightly higher than those of micro-gamma scanning and chemical analysis methods. (Author).

International Nuclear Information System (INIS)

Tarapur Atomic Power Station Unit-4 is first 540 MWe pressurized heavy water reactor in India. It achieved criticality on 06th March 2005 and then operated at full power i.e 500 MWe. Radiation workers during the normal operation and reactor shutdown are exposed to radiation field. The control of dose rates and the collective dose of the radiation workers is most important for the best performance of the reactor. Experience gained during the operation of the 220 MWe reactors has shown that the Moderator system, primary heat transport system, annulus gas system and moderator cover gas system are the main systems contributing to the dose rate and collective dose. In order to identify the radio nuclides contributing to the radiation field, study was undertaken at TAPS Unit-4. Various samples from the Moderator, primary heat transport system, annulus gas ...

International Nuclear Information System (INIS)

In the framework of spallation neutron sources and accelerator-driven systems, the international PISA (Proton-induced Spallation) collaboration has initiated measurements of total- and double-differential cross-sections for products of spallation reactions in a wide range of target nuclei (GU) at the COSY proton accelerator in Julich (Germany). The purpose is to study secondary particle production created in structural, window and target materials via proton beams up to 2.5 GeV of incident kinetic energy. Residual nuclei [H, He up to intermediate mass fragment (IMF)] production cross-sections are of great importance for estimating the damage to target and structure materials involving the planned spallation neutron sources, given that the lifetime of window and target materials is directly associated to those cross-sections. The demand for reliable theoretical predictions on production cross-sections is by no means satisfied by the models and ...

Science.gov (United States)

Kong-Ming Wu (Corresponding author) The application of recombinant DNA technology has resulted in many insect-resistant varieties by genetic engineering (GE). Crops expressing Cry toxins derived from Bacillus thuringiensis (Bt) have been planted worldwide, and are an effective tool for pest control. However, one ecological concern regarding the potential effects of insect-resistant GE plants on non-target organisms (NTOs) has been continually debated. In the present study, we briefly summarize the data regarding the development and commercial use of transgenic Bt varieties, elaborate on the procedure and methods for assessing the non-target effects of insect-resistant GE plants, and synthetically analyze the related research results, mostly those published between 2005 and 2010. A mass of laboratory and field studies have shown that the currently available Bt crops have no direct detrimental effects on NTOs due to their ...

International Nuclear Information System (INIS)

Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI_3 or BBr_3 discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates (>6000 Angstrom min"-"1) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI_3 or BBr_3 content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO_2 and SiN_x of #>=#8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and AlInP. copyright 1998 American Vacuum Society.

British Library Electronic Table of Contents (United Kingdom)

Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO"2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H"2, H"2O and CO"2. The CO"2 outgassing could be correlated with CF"4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF"4-plasma-cleaned interface.

Energy Technology Data Exchange (ETDEWEB)

The determination of optical parameter type in x-ray pelvimetry was performed on 59 subjects using Fuji computed radiography (FCR). Excellent measurable images were obtained at GT (type A), RT (type P), GA (1.6) and RN (2.0). To reduce maternal and fetal exposure to radiation, the doses were progressively decreased to 50%, 25%, 12.5%, 6.3%, that of conventional screen/film system. One-eighth per cent of conventional radiation dose was minimum for FCR at which measurable images could be obtained. Thereby drastically reducing the radiological exposure to both mother and fetus was possible to obtain measurable images in FCR. (author).

British Library Electronic Table of Contents (United Kingdom)

Background. A 19-year-old girl was diagnosed with systemic lupus erythematosus, based on findings of arthritis, malar rash, positive antinuclear antibody test and high levels of antibodies to double-stranded DNA. Two months after diagnosis, the patient presented with a sudden drop in blood hemoglobin level. Several days later, she developed bloody sputum, rapidly progressive dyspnea and hypoxemia. High-resolution CT showed diffuse alveolar infiltrates in both lung fields.Investigations. Physical examination, complete blood count, erythrocyte sedimentation rate, urinalysis, 24-h urine protein excretion, fecal occult blood test, d-dimer test, acid hemolysis test, activated partial thromboplastin time and prothrombin time, direct and indirect Coombs tests, bone marrow smear, arterial blood ga...

Energy Technology Data Exchange (ETDEWEB)

In a laser system for converting infrared laser light waves to visible light comprising a source of infrared laser light waves and means of harmoic generation associated therewith for production of light waves at integral multiples of the frequency of the original wave, the improvement of said means of harmonic generation comprising a crystal having the chemical formula X.sub.2 Y(NO.sub.3).sub.5 .multidot.2 nZ.sub.2 o wherein X is selected from the group consisting of Li, Na, K, Rb, Cs, and Tl; Y is selected from the group consisting of Sc, Y, La, Ce, Nd, Pr, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Al, Ga, and In; Z is selected from the group consisting of H and D; and n ranges from 0 to 4.

Energy Technology Data Exchange (ETDEWEB)

The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 {mu}m minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga{sup +} focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated.

International Nuclear Information System (INIS)

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

International Nuclear Information System (INIS)

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

International Nuclear Information System (INIS)

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

International Nuclear Information System (INIS)

A conceptual fusion synfuel production system has been developed with the unique features of: (1) a fusion blanket producing high-temperature (1250"0C) process heat, and (2) the GA sulfur-iodine thermochemical cycle. The system incorporates a two-zone blanket which achieves a tritium breeding ratio of 1.1 while delivering a high fraction (30%) of the fusion heat at high temperatures (1250"0C). The multiple barriers to tritium permeation in the blanket design permit the hydrogen product to meet 10CFR20 regulatory requirements without stringent requirements on the tritium recovery systems. A ceramic heat exchanger, incorporating SiC tubes and headers to contain the process stream and a cooled, Inconel 718 pressure shell to contain the helium, was designed for transferring the heat from the high-temperature coolant to the process. A good heat-line match of the blanket heatsource temperature distribution to ...

Energy Technology Data Exchange (ETDEWEB)

The energy level schemes of /sup 192/Os and /sup 192/Pt have been established on the basis of ..gamma..-..gamma.. coincidence studies using a dual parameter data collection system. Ge(Li) detectors were employed to study the gamma spectra produced in the E.C. and ..beta../sup -/ decays of /sup 192/Ir to /sup 192/Os and /sup 192/Pt, respectively. Thirteen new transitions and three new levels at 1146.95, 1237.35 and 1913.76 keV are suggested. Relative intensities from singles measurements, branching ratios, ..cap alpha..(K) and log ft values were calculated and multipolarities, spins and parities deduced. Comparisons are made with predictions of the Interacting Boson Model calculated on the basis of an O(6) to SU(3) transition.

CERN Document Server

We discuss an experimental technique aimed at tagging electron neutrinos in multi-GeV artificial sources on an event-by-event basis. It exploits in a novel manner calorimetric and tracking technologies developed in the framework of the LHC experiments and of rare kaon decay searches. The setup is based on an instrumented decay tunnel equipped with tagging units that intercept secondary and tertiary leptons from the bulk of undecayed pi+ and protons. We show that the taggers are able to reduce the nue contamination originating from K_e3 decays by about one order of magnitude. Only a limited suppression (~60%) is achieved for nue produced by the decay-in-flight of muons; for moderate beam powers, similar performance as for K_e3 can be reached supplementing the tagging system with an instrumented beam dump.

Energy Technology Data Exchange (ETDEWEB)

The K/sub ..beta..//K/sub ..cap alpha../ X-ray intensity ratios are measured for Mn and Fe and for six other elements with Z lying in the range 49 less than or equal to Z less than or equal to 82 following electron capture decay and photon excitation using /sup 241/Am and /sup 57/Co sources. High-resolution Si(Li) and HpGe detector systems were used in the experiments. The dependence of K/sub ..beta..//K/sub ..cap alpha../ values on the mode of excitation in the case of Mn and Fe is attributed to chemical effects, while no such dependence is found for the high-Z elements.

Energy Technology Data Exchange (ETDEWEB)

Since 1979, scientists and engineers at the Los Alamos National Laboratory have designed, constructed, and operated a radio-frequency (RF) linac free-electron laser (FEL) at wavelengths from 9 to 45 /mu/m. Coupled with success of other research centers investigating wavelengths from the visible to far-infrared, Los Alamos is now proposing a vacuum-ultraviolet and soft x-ray (referred to henceforth as extreme ultraviolet, (XUV)) FEL oscillator/Self-Amplified Spontaneous Emission amplifier with beam energies ranging from 100 MeV to 1 GeV. This paper will focus on the first milestone of the proposed Los Alamos XUV project, i.e., a 250-MeV linac with approximately 50 mA of average current, producing photons with wavelengths below 1000 /angstrom/. 3 refs., 3 figs.

CERN Document Server

The recently measured experimental data of Argonne National Laboratory for high-spin states in neutron-rich $^{71,73,75,77}$Ga isotopes have been interpreted in the framework of large-scale shell model. Calculations have been performed in $f_{5/2}pg_{9/2}$ model space with two recent effective shell model interactions, JUN45 and jj44b. We also predict high-spin states for $^{79,81}$Ga, where very little is known experimentally. The calculated results show that existence of band structure built on top of the 3/2$^-$, 5/2$^-$ and 9/2$^+$ levels in $^{71-77}$Ga. The collective structure reflected in experimental data is not well reproduced in calculated values. The calculated positive parity states in $^{71,73,75}$Ga are higher in energy in comparison to experimental finding, while for $^{77,79}$Ga, the positive parity states are in better agreement. Both the interactions predict, ...

International Nuclear Information System (INIS)

Focused Ion Beams are an important approach for nanostructure fabrication in the semiconductor industry and material sciences. Applications in sputtering and ion induced deposition of materials are investigated. The IMSA FIB system equipped with the high resolution Orsay Physics CANION M31plus ion column with current densities up to 10 A/cm"2 including a gas injection system is applied. In this work the ion beam induced chemical vapour deposition of tungsten, wherefore tungsten hexacarbonyl as precursor gas is used for a first investigation. Conductive tungsten-nanowires with smallest cross-section upon a substrate of Si and SiO_2 are produced. The ion beam parameters of this focused ion beam system are optimized for the metal deposition. A short insight in the theory of layer nucleation and growth induced by the ion beam during the metal deposition is given. The layer quality is determined by Auger electron analysis which ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

... dpg-tagungen.de Dresden (Germany) 27-31 Mar 2006 0420-0195 VDPEAZ

Energy Technology Data Exchange (ETDEWEB)

This paper discusses design considerations for the recently introduced GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140--180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. The authors focus on the issues of grid design, top-cell thickness, and antireflectance coat. They also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.

International Nuclear Information System (INIS)

Highly reliable, practical 0.6 #mu#m-band AlGaInP visible laser diodes (LDs), using a GaInP active layer, are described. Over 10,000 hour stable operation at 50 degrees C has been achieved for 3mW light output. Characteristics for visible LDs with an AlGaInP active layer or a multi-quantum-well active layer are also presented.

Science.gov (United States)

Heterostructures based on AlGaInP alloy compounds are very attractive for visible semiconductor lasers, heterojunction bipolar transistors (HBTs), and high-electron-mobility transistors (HEMTs) lattice matched to GaAs substrates. Several wet etching solutions for AlGaP of different compositions have been studied. Al{sub 0.5}Ga{sub 0.5}P is found to etch in HF, H{sub 3}PO{sub 4}, hyphosphorous acid (HOPH{sub 2}:O), HCl, KOH, and 1% Br{sub 2}-methanol (MeOH). Etching of Al{sub 0.5}Ga{sub 0.5}P in HCl is reaction limited with an activation energy of {approximately}54.4 kJ/mol. At fixed conditions, the etch rates of Al{sub x}Ga{sub 1{minus}x}P vary exponentially with x in HF and HCl, while in 1% Br{sub 2}-MeOH and mixtures of HCl and HNO{sub 3} the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for ...

Energy Technology Data Exchange (ETDEWEB)

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 {mu}m In{sub x}Al{sub y}Ga{sub 1-x-y}N alloy grown on 0.5-1.0 {mu}m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In{sub x}Al{sub y}Ga{sub 1-x-y}N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al ...

UK PubMed Central (United Kingdom)

Metabolism of [¹⁴C]gibberellin (GA) A₁₂ (GA₁₂) and [¹⁴C]gibberellin A₁₂-aldehyde (GA₁₂-aldehyde) was examined in cotyledons and seed...Full Text Available

UK PubMed Central (United Kingdom)

Before the influence of divergent factors on gross efficiency (GE) [the ratio of mechanical power output (PO) to metabolic power input (PI)] can be assessed, the variation in GE between days, i.e. the...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

International Nuclear Information System (INIS)

A theoretical study of structural and electronic properties of GeC, SnC and GeSn is presented using the full potential linearized augmented plane wave method. In this approach, the generalized gradient approximation was used for the exchange-correlation potential. Results are given for lattice constant, bulk modulus and its pressure derivative in both zinc-blende and rocksalt structures. Band structure, density of states and band gap pressure coefficients in zinc-blende structure are also given. The results are compared with previous calculations and with experimental measurements.

International Nuclear Information System (INIS)

Most of the low-level liquid radioactive wastes generated from PWR plants are classified into high or low total suspended solid(HTDS or LTDS), and into radiochemical and radioactive laundry waste. Although the evaporation process has a high decontamination ability, it has several problems such as corrosion, foam, and congestion. A new liquid waste disposal process using the ion-exchange demineralizer(IED), instead of the current evaporation process, has been introduced into the Yonggwang NPP No 5 and 6. These two methods have been compared to understand the differences in this study. Aspects compared here were the released radioactivity amount of the liquid radioactive wastes, the dose of off-site residents, the decontamination factor, and the amount of the solid radioactive wastes. The IED system is designed to discharge higher radioactivity about 20% than the evaporating system, and the actual radioactivity released from the evaporating and ...

Energy Technology Data Exchange (ETDEWEB)

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

Science.gov (United States)

Novel in situ polymerizable liquid three-arm biodegradable oligomeric polyesters based upon glycolic acid (GA), L-lactic acid (LLA), and their copolymers are synthesized and characterized. Injectable and in situ curable polymer neat resins and their composites formulated with bioabsorbable beta-tricalcium phosphate are prepared at room temperature using photo- and redox-initiation systems, respectively. The cured neat resins show the initial compressive yield strength (YCS, MPa), modulus (M, MPa), ultimate compressive strength (UCS, MPa), and toughness (T, kN mm), ranging from 4.0 to 20.1, 201.5 to 730.2, 82.7 to 310.5, and 1.02 to 3.93. The cured composites show the initial YCS, M, UCS and T, ranging from 27.7 to 56.4, 1440 to 4870, 81.6 to 158.9, and 0.94 to 1.97. Increasing GA/LLA ratio increases all the initial compressive strengths of both neat resins and composites. Increasing filler content increases YCS and M but ...

International Nuclear Information System (INIS)

This paper reports the results of a fine-probe EDS microanalytical study of cellular precipitation in a Cu-Ti binary alloy. Compositional profiles across the solute depleted Cu-rich FCC lamellae and the Cu_4Ti lamellae within isothermally formed cellular colonies were measured in a FEG-TEM from thin-foil specimens prepared by conventional electropolishing and by a technique using a Ga"+ focused ion-beam (FIB). The Cliff-Lorimer ratio method, with an absorption correction, was employed to quantify the compositions. Two FIB samples were prepared with different orientations of the lamellae with respect to the ion-milling direction. The compositional profiles across the Cu-rich FCC lamellae and the Cu_4Ti compound lamellae in both the FIB-prepared samples and the electropolished sample were, within experimental error, numerically equivalent. The composition of the Cu_4Ti compound phase lamellae was very close to the ideal stoichiometric composition of 20 at% Ti. It is ...

Energy Technology Data Exchange (ETDEWEB)

The 6911 m long Super Proton Synchrotron (SPS) at CERN with a peak energy of 450 GeV is at the top of the LHC preaccelerator-complex. Apart from the LHC, the SPS is with the Tevatron the accelerator with the largest stored beam energy of up to 2.5 MJ. The SPS has a known vulnerability to fast equipment failures that led to an uncontrolled loss of a high intensity beam in 2008, which resulted in major damage of a main dipole. The beam loss was caused by a fast tune decrease towards an integer resonance. Simulations and distinct experimental studies provide clear understanding of the beam dynamics at different SPS tune resonances. Diverging closed orbit oscillations, dispersion explosion and increased beta-beating are the driving effects that lead to a complete beam loss in as little as 10 turns (230 {mu}s) after reaching the stop band of the resonance. Dedicated experiments of fast failures of the main power converters reveal that the current interlock ...

Science.gov (United States)

The system of the early forecast of radiation hazardous fluxes of solar cosmic rays in space on the basis of the real time neutron monitors data obtained by the NMDB (Neutron Monitor Data Base) network is created. The forecast system is based on a short cut technique of definition of a spectrum of solar protons from the data of the limited number of neutron monitor stations and with a simplified procedure of accounts. It is shown that the results of computations of solar proton spectra with the short-cut technique little differ from spectra obtained with a complete technique at energies less than 5 GeV. Thus the good agreement between derived from the neutron monitor data intensities of solar protons in an energy range of hundreds MeV with the data of direct measurements of solar protons at GOES-11 spacecraft is observed. The maximum of increase on neutron monitors outstrips on several hours (2-10) an appropriate maximum of ...

Energy Technology Data Exchange (ETDEWEB)

The physics and technology of this new Cerenkov detector are discussed, including materials studies, construction techniques, and resolution measurements. Sources of resolution error are individually identified and measured where possible. The results of all studied indicate that the measurement resolution is understood. This work has led to the adoption of a large scale ring imaging detector as part of a new high energy physics spectrometer, the SLD, at the Stanford Linear Accelerator Center. Results from an amplitude analysis of strange meson final states in K/sup /minus//p ..-->.. /ovr K/sub 0//..pi../sup /minus//p interactions are presented. The data derive from a 4 event/nb exposure of the LASS (large Aperture Superconducting Solenoid) spectrometer to an 11 GeV/c K/sup /minus// beam. The data sample consists of /approximately/100,000 vents distributed over the Dalitz plot of the channel. The process is observed to be dominated by the production and decay of ...

Energy Technology Data Exchange (ETDEWEB)

Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

International Nuclear Information System (INIS)

Semiconductor quantum dots (QDs) are a promising approach to realize a single-photon source. To avoid bulky and expensive laser systems for future applications, electrical excitation is desirable. InP QDs are especially suited, as they emit in the red spectral range and therefore in the optimal range of commercial detectors. Additionally, they have been shown to be capable of emitting single photons up to 80 K. Thus, we embedded InP QDs in the intrinsic region of a p-i-n diode. To form single devices, 100 #mu#m mesas were etched and supplied with electrical contacts. We investigated the electroluminescence from single QDs and performed second-order auto correlation measurements to verify single-photon emission. To prevent expensive helium cooling and reach operation above 80 K, we investigated the influence of elevated temperature on the performance of our device. Since triggered single-photon emission is required for most applications, sub-nanosecond pulses were ...

International Nuclear Information System (INIS)

With the aim of studying the magnetic properties of reduced-dimensionality magnetic systems we have patterned 250 nm- and 500 nm-size square elements on Fe/NiO layers by 30 keV Ga"+ focused ion beam (FIB) milling, varying beam current and pixel dwell time. By high resolution scanning electron microscope (SEM) imaging and atomic force microscopy (AFM) analysis we found that island size decreases from the nominal value by increasing the beam current and features sharpness improves on increasing the dwell time. The top surface of the isolated features has a pronounced edge bending which may be as high as 9 nm with respect to the flat inner area of the island and decreases as dwell time grows. By varying the ion fluence we found that such a shape is related to a surface swelling effect occurring at low ion fluence in the irradiated areas. The swelling-related damage at the edges is expected to influence the magnetic properties of the patterned ...

CERN Document Server

We study the time evolution of a brane construction that is holographically dual to a strongly coupled gauge theory that dynamically breaks a global symmetry through the generation of an effective composite Higgs vev. The D3/D7 system with a background magnetic field or non-trivial gauge coupling (dilaton) profile displays the symmetry breaking. We study motion of the D7 brane in the background of the D3 branes. For small field inflation in the field theory the effective Higgs vev rolls from zero to the true vacuum value. We study what phenomenological dilaton profile generates the slow rolling needed, hence learning how the strongly coupled gauge theory's coupling must run. We note that evolution of our configuration in the holographic direction, representing the phyiscs of the strong interactions, can provide additional slowing of the roll time. Inflation seems to be favoured if the coupling changes by only a small amount or very gently. We speculate on how such ...

International Nuclear Information System (INIS)

Electron probe microanalysis (EPMA) offers high sensitivity and high accuracy in quantitative measurements of chemical compositions and mass coverages. Owing to the low detection limits of the wavelength-dispersive technique, monolayers with mass coverages of about 0.05 pg cm z can be detected. Assuming a density of 5 g cm--3 this corresponds to a thickness of 0.1 nm. With these advantages in mind, EPMA was extended to depth profile analysis in the sub-micron range using a surface removal technique. The present paper shows how depth profile analysis can be improved by combining EPMA and the focused ion beam (FIB) technique. The focused ion beam system uses a Ga+ ion beam. The ion beam allows the milling of defined geometries on the nanometer scale, so that very shallow bevels with exactly defined angles in relation to the surface can be obtained. Low surface damage is expected due to low sputtering effects. Calibrated WDX measurements along the ...

International Nuclear Information System (INIS)

Most of the low-level liquid radioactive wastes generated from PWR plants are classified into high or low total suspended solid(HTDS or LTDS), radio-chemical waste and radioactive laundry waste. Although the evaporation process has a high decontamination ability, it has several problems such as corrosion, foaming, and congestion. A new liquid waste disposal process using the ion-exchange demineralizer(IED) has been introduced into the Yonggwang NPP 5 and 6 to complement the current evaporation process. To determine the differences, these two methods have been compared in this study. Those aspects compared here were the released radioactivity volume of the liquid radioactive wastes, The dose of off-site residents, the decontamination factor, and the amount of the solid radioactive wastes. While it was expected that the liquid radioactive waste volume in the evaporating system would be 20 percent higher than in the IED, the actual volume of the liquid radioactive ...

International Nuclear Information System (INIS)

Ga_0_._6In_0_._4P/(Al_0_._8Ga_0_._2)_0_._4In_0_._6P strain-compensated multiple quantum wells (SCMQW) and Ga_0_._5In_0_._5P/(Al_0_._4Ga_0_._6)_0_._5In_0_._5P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

Energy Technology Data Exchange (ETDEWEB)

Continuous-wave (cw) operation at temperatures up to 23 /sup 0/C of an Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P/Ga/sub 0.52/In/sub 0.48/P/ Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 /sup 0/C for a device with a 10-..mu..m-wide and 250-..mu..m-long ion-implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 /sup 0/C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (approx.0.3 ..mu..m) p-AlGaInP layer and a p-Al/sub 0.76/Ga/sub 0.24/As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.

Energy Technology Data Exchange (ETDEWEB)

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

Energy Technology Data Exchange (ETDEWEB)

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

International Nuclear Information System (INIS)

The crystal field splitting of the "3H_4 ground state of the Pr ion in PrFeO_3 and PrGaO_3 has been investigated by inelastic scattering of the thermal neutrons. At several temperatures the transitions have been measured by TAS and TOF methods for polycrystalline PrFeO_3 and by the TOF method for polycrystalline PrGaO_3. Energy level schemes which are different for these materials are given. (author).

International Nuclear Information System (INIS)

Al, Ga and In complexing with methylthymol blue (H_6R) purified by gel filtration is studied. in the case of metal excess complexes with the ratio of components M:H_6R=2:1 with #lambda#=587(Al), 590(Ga) and 593 nm(In) appear. In the case of reacting agent excess complexes with the ratio of component 1:1 with #lambda#_m_a_x=480-490 (Al) and 480 nm(Ga, In) appear. The mechanism of complexing reactions is studied. Molar extinction coefficients and stability constants are calculated.

International Nuclear Information System (INIS)

The oxygen vacancies distribution in the rigid lattice and the thermally activated motion of oxygen atoms are studied in La1-xSrxGa1-xMgxO3-x (x=0.00; 0.05; 0.10; 0.15 and 0.20) compounds. For that 71Ga, 25Mg and 17O NMR was performed from 100 K up to 670 K, and ion conductivity measurements were carried out up to 1273 K. The comparison of the electric field gradients at the Ga- and Mg-sites evidences that oxygen vacancies appear exclusively near gallium cations as a species trapped below room temperature in local clusters, GaO5/2-#square#-GaO5/2. These clusters decay at higher temperature into mobile constituents of the structural octahedra Ga(O5/6#square#1/6)6/2. At the same time, the nearest octahedral oxygen environment of magnesium cations persists at different doping levels. The case of two adjacent vacant anion sites is found highly unlikely within the ...

Energy Technology Data Exchange (ETDEWEB)

In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

Energy Technology Data Exchange (ETDEWEB)

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

British Library Electronic Table of Contents (United Kingdom)

To eliminate their classical brittleness and flexibility problems zein films were plasticized by incorporation of different phenolic acids (gallic acid (GA), p-hydroxy benzoic acid (HBA) or ferulic acids (FA)) or flavonoids (catechin (CAT), flavone (FLA) or quercetin (QU)). The use of GA, CAT, FA and HBA at 3 mg/cm2 eliminated the brittleness of films and gave highly flexible films showing elongations between 135% and 189%, while FLA and QU caused no considerable effect on film elongation. The films containing FA and HBA showed extreme swelling and lost their structural integrity when hydrated in distilled water. In contrast, CAT and GA containing films maintained their integrity following hydration. Most of the GA (up to 93%) and a considerable portion of CAT (up to 60%) in the films exis...

International Nuclear Information System (INIS)

Russian 1997 p. 263-264 Russian Federation Tkach, VL Ushakova, GA

British Library Electronic Table of Contents (United Kingdom)

Within the framework of the effective-mass approximation, using a variational method, we have calculated the effect of intense laser radiation on the binding energy of the shallow-donor impurities in a Ga1- x In x N y As1- y /GaAs single quantum well for different nitrogen and indium mole concentrations. Our numerical results show that the binding energy strongly depends on the laser intensity and frequency (via the laser dressing parameter) and it also depends on the nitrogen and indium concentrations. Impurity binding energy under intense laser fields can be tuned by changing the nitrogen and indium mole fraction.

KoreaScience (Korea)

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CERN Document Server

It is widely accepted that the prompt transient signal in the 10 keV - 10 GeV band from gamma-ray bursts (GRBs) arises from multiple shocks internal to the ultra-relativistic expansion. The detailed understanding of the dissipation and accompanying acceleration at these shocks is a currently topical subject. This paper explores the relationship between GRB prompt emission spectra and the electron (or ion) acceleration properties at the relativistic shocks that pertain to GRB models. The focus is on the array of possible high-energy power-law indices in accelerated populations, highlighting how spectra above 1 MeV can probe the field obliquity in GRB internal shocks, and the character of hydromagnetic turbulence in their environs. It is emphasized that diffusive shock acceleration theory generates no canonical spectrum at relativistic MHD discontinuities. This diversity is commensurate with the significant range of spectral indices discerned in prompt burst ...

Energy Technology Data Exchange (ETDEWEB)

The relative contributions of interstitials and vacancies to diffusion of a dopant A in silicon are specified by the interstitial fraction of diffusivity, f{sub A}. Accurate knowledge of f{sub A} is required for predictive simulations of Si processing during which the point defect population is perturbed, such as transient enhanced diffusion. While experimental determination of f{sub A} is traditionally based on an underdetermined system of equations, we show here that it is actually possible to derive expressions that give meaningful bounds on f{sub A} without any further assumptions but that of local equilibrium. By employing a pair of dopants under the same point-defect perturbance, and by utilizing perturbances very far from equilibrium, we obtain experimentally f{sub Sb}{le}0.012 and f{sub B}{ge}0.98 at temperatures of {approximately}800{degree}C, which are the strictest bounds reported to date. Our results are in agreement with a ...

International Nuclear Information System (INIS)

PANDA is a large scale facility for investigating the long-term decay heat removal from the containment of a next generation of 'passive' Advanced Light Water Reactors (ALWR). PANDA was used to examine the long-term LOCA response of the Passive Containment Cooling System (PCCS) for the General Electric (GE) Simplified Boiling Water Reactor (SBWR). The first PANDA test series had the dual objectives of demonstrating the performance of the SBWR PCCS and extending the data base available for containment analysis code qualification. The test objectives also include the study of the effects of mixing and stratification of steam and noncondensible gases in the drywell (DW) and in the suppression chamber or wetwell (WW). Ten tests were conducted in the course of the PANDA SBWR Program. The tests demonstrated a favorable and robust overall PCCS performance under different conditions. The present paper focuses on the main phenomena observed during the ...

CERN Document Server

Cosmic ray antiprotons provide an important probe for the study of cosmic-ray propagation in the interstellar space and to investigate the existence of Galactic dark matter. Cosmic rays are hampered by the Moon, therefore a deficit of cosmic rays in its direction is expected (the so-called "Moon shadow"). The Earth-Moon system acts as a magnetic spectrometer. In fact, due to the geomagnetic field the center of the Moon shifts westward by an amount depending on the primary cosmic ray energy. Paths of primary antiprotons are therefore deflected in an opposite sense in their way to the Earth. This effect allows, in principle, the search of antiparticles in the opposite direction of the observed Moon shadow. The ARGO-YBJ experiment, in stable data taking since November 2007 with an energy threshold of a few hundreds of GeV, is observing the Moon shadow with high statistical significance. Using about 1 year data, an upper limit of the antip/p flux ...

Energy Technology Data Exchange (ETDEWEB)

Using a 47 GeV electron beam, the Final Focus Test Beam (FFTB) produces vertical spot sizes around 70 nm. These small beam sizes introduce an excellent opportunity to develop and test high resolution Radio Frequency Beam Position Monitors (RF-BPMs). These BPMs are designed to measure pulse to pulse beam motion (jitter) at a theoretical resolution of approximately 1 nm. The beam induces a TM{sub 110} mode with an amplitude linearly proportional to its charge and displacement from the BPM's (cylindrical cavity) axis. The C-band (5,712 MHz) TM{sub 110} signal is processed and converted into beam position for use by the Stanford Linear Collider (SLC) control system. Presented are the experimental procedures, acquisition, and analysis of data demonstrating resolution of jitter near 25 nm. With the design of future e{sup +}e{sup -} linear colliders requiring spot sizes close to 3 nm, understanding and developing RF-BPMs will be essential in ...

International Nuclear Information System (INIS)

The authors describe the application of an approximate fuzzy C-means (AFCM) clustering algorithm as a data dimension reduction approach to medical magnetic resonance images (MRI). Image data consisted of one T1-weighted, two T2-weighted, and one T2*-weighted (magnetic susceptibility) image for each cranial study and a matrix of 10 images generated from 10 combinations of TE and TR for each body lymphoma study. All images were obtained with a 1.5 Tesla imaging system (GE Signa). Analyses were performed on over 100 MR image sets with a variety of pathologies. The cluster analysis was operated in an unsupervised mode and computational overhead was minimized by utilizing a table look-up approach without adversely affecting accuracy. Image data were first segmented into 2 coarse clusters, each of which was then subdivided into 16 fine clusters. The final tissue classifications were presented as color-coded anatomically-mapped images and as two and ...

Energy Technology Data Exchange (ETDEWEB)

RangerMaster{trademark} is the embedded firmware for Quantrad Sensor`s integrated nuclear instrument package, the Ranger{trademark}. The Ranger{trademark}, which is both a gamma-ray and neutron detection system, was originally developed at Los Alamos National Laboratory for in situ surveys at the Plutonium Facility to confirm the presence of nuclear materials. The new RangerMaster{trademark} software expands the library of isotopes and simplifies the operation of the instrument by providing an easy mode suitable for untrained operators. The expanded library of the Ranger{trademark} now includes medical isotopes {sup 99}Tc, {sup 201}Tl, {sup 111}In, {sup 67}Ga, {sup 133}Xe, {sup 103}Pa, and {sup 131}I; industrial isotopes {sup 241}Am, {sup 57}Co, {sup 133}Ba, {sup 137}Cs, {sup 40}K, {sup 60}Co, {sup 232}Th, {sup 226}Ra, and {sup 207}Bi; and nuclear materials {sup 235}U, {sup 238}U, {sup 233}U, and {sup 239}Pu. To accomplish isotopic ...

International Nuclear Information System (INIS)

1 - Description of program or function: MCB-JEF2.2 is a continuous-energy cross section libraries in ACE Format suitable for the MCB-1C and MCNP codes. Libraries for various materials were generated at six different Temperatures, and cover the energy range up to 20 MeV. Format: ACE. Number of groups: Continuous energy. Nuclides: H-1, H-2, H-3, He-3, He-4, Li-6, Li-7, Be-9, B-10, B-11, C-nat., N-14, N-15, O-16, O-17, Na-23, F-19, Mg-nat., Al-27, Si-nat., P-31, S-32, S-33, S-34, S-36, Cl-nat, K-nat, Ca-nat., Ti-nat, V-nat, Cr-50, Cr-52, Cr-53, Cr-54, Mn-55, Fe-54, Fe-56, Fe-57, Fe-58, Co-59, Ni-58, Ni-59, Ni-60, Ni-61, Ni-62, Ni-64, Cu-nat, Ga-nat, Ge-72, Ge-73, Ge-74, Ge-76, As-75, Se-74, Se-76, Se-77, Se-78, Se-80, Se-82, Br-79, Br-81, Kr-78, Kr-80, Kr-82, Kr-83, Kr-84, Kr-85, Kr-86, Rb-85, Rb-86, Rb-87, Sr-84, Sr-86, Sr-87, Sr-88, Sr-89, Sr-90, Y-89, Y-90, Y-91, Zr-nat, Zr-90, ...

Energy Technology Data Exchange (ETDEWEB)

A simple highly efficient procedure has been developed for recovery of thallium radioisotopes from lead and bismuth targets irradiated by 1-GeV protons. The procedure is based on the use of extraction chromatography. The cross-sections have been determined for formation of {sup 200}Pb, {sup 201}Pb, {sup 202m}Pb, and {sup 203}Pb radioisotopes in targets from lead with natural isotopic composition, irradiated by 1-GeV protons.

Energy Technology Data Exchange (ETDEWEB)

The RSS collaboration has measured the spin structure functions of the proton and the deuteron at Jefferson Lab using the Hall C HMS spectrometer, a polarized electron beam and a polarized solid target. The asymmetries A and A were measured in the region of the nucleon resonances (0.82 GeV < W < 1.98 GeV) at an average four momentum transfer of Q2 = 1.3 GeV2. The extracted spin structure functions and their kinematic dependence will make a significant contribution in the study of higher-twist effects and polarized duality tests. A description of the experiment and the latest findings of the analysis will be presented.

CERN Document Server

PAMELA is a satellite borne experiment designed to study with great accuracy cosmic rays of galactic, solar, and trapped nature in a wide energy range (protons: 80 MeV-700 GeV, electrons 50 MeV-400 GeV). Main objective is the study of the antimatter component: antiprotons (80 MeV-190 GeV), positrons (50 MeV-270 GeV) and search for antinuclei with a precision of the order of $10^{-8}$). The experiment, housed on board the Russian Resurs-DK1 satellite, was launched on June, $15^{th}$ 2006 in a $350\\times 600 km$ orbit with an inclination of 70 degrees. In this work we describe the scientific objectives and the performance of PAMELA in its first two years of operation. Data on protons of trapped, secondary and galactic nature - as well as measurements of the December $13^{th}$ 2006 Solar Particle Event - are also provided.

Energy Technology Data Exchange (ETDEWEB)

We report the influence of a small quantity of Cl[sub 2], which enhanced the selectivity of silicon-selective epitaxial growth (Si-SEG) in UHV-CVD using Si[sub 2]H[sub 6], on both the epitaxial growth rate and the B-doping properties for each Si and Si[sub 1-x]Ge[sub x] film. The small quantity of Cl[sub 2] inhibited the Si, Ge and B incorporation, while the selectivity was enhanced. However, it was found, in the case of Si[sub 1-x]Ge[sub x]-SEG using Cl[sub 2], that the reduction ratio of both the growth rate and the B incorporation were smaller than those of Si-SEG with the selectivity still more enhanced. (orig.)

International Nuclear Information System (INIS)

Short communication. 2 figs.

Science.gov (United States)

... ge aircraft engines (geae) has taken to development an induction plasma deposition (ipd) processing method for the fabrication of ti6242/sic mmc ...

Science.gov (United States)

... Bisgard, GE, Ruiz, AV, Grover, RF & Will, JA, "Ventilatory control in the ... Watkins, BE, Riegle, GD & Heisey, SR, "Respiratory responses to ACTH and ...

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to ...

Science.gov (United States)

Thermal wet oxidations of GaP and Al{sub 0.4}Ga{sub 0.6}P at 650 degree sign C for various times have been performed. Comparisons are made on oxidation rates and post oxidation morphology. Transmission electron microscopy shows that when oxidizing GaP, polycrystalline monoclinic GaPO{sub 4}{center_dot}2H{sub 2}O forms without noticeable loss of phosphorus. Oxidation for 6 h or more leads to poor morphology resulting in cracks and detachment. A thickness expansion of about 2.5-3 times is noticed as a result of oxidation. In contrast, oxidized Al{sub 0.4}Ga{sub 0.6}P exhibits much better morphology without cracks or detachment from the substrate. The oxide has an almost amorphous-like microstructure. The oxidation process shows typical diffusion-limited reaction at long anneals. Preliminary work on the oxidation of AlP indicates that the reaction leads to formation of Al{sub 2}O{sub ...

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit ...

International Nuclear Information System (INIS)

The structural changes attendant on intermartensitic transformation in a Ni-Mg-Ga shape memory alloy are considered using magneto-optical visualization with the help of ferrite-garnet monocrystalline films. It is established that on the intermartensitic transformation the complete reorganization of martensite macrostructure fails. Martensite crystals resulted from the basic transformation change somewhat their sizes on intermartensitic transition. The existence of large-scale labyrinth magnetic domain structure is revealed

International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

International Nuclear Information System (INIS)

We use the Generalized Quasi-Chemical Approach (GQCA) combined with ab initio ultrasoft pseudopotential calculations within density functional theory in order to obtain the structural and electronic properties of Al_xGa_yIn_1_-_x_-_yX (X=As, P or N) quaternary alloys in the zincblende structure. Results for the bond lengths show that their variations with composition are approximately linear and that they do not deviate much from the values of the corresponding binary compounds. For the variation of the band gaps, we obtain a bowing parameter b=0.26 eV for the (Ga_0_._4_7In_0_._5_3As)_z(Al_0_._4_8In_0_._5_2As)_1_-_z quaternary alloy lattice matched to InP, in very good agreement with experimental data. In the case of AlGaInN, a bowing parameter of 0.22 eV is obtained for zincblende AlGaInN lattice matched to GaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

International Nuclear Information System (INIS)

This topical review provides an overview of quantum dot micropillars and their application in cavity quantum electrodynamics (cQED) experiments. The development of quantum dot micropillars is motivated by the study of fundamental cQED effects in solid state and their exploitation in novel light sources. In general, light-matter interaction occurs when the dipole of an emitter couples to the ambient light field. The corresponding coupling strength is strongly enhanced in the framework of cQED when the emitter is located inside a low mode volume microcavity providing three-dimensional photon confinement on a length scale of the photon wavelength. In addition, coherent coupling between light and matter, which is essential for applications in quantum information processing, can be achieved when dissipative losses, predominantly due to photon leakage out of the cavity, are strongly reduced. In this paper, we will demonstrate that high-quality, low mode volume quantum dot micropillars ...

British Library Electronic Table of Contents (United Kingdom)

Three field experiments were conducted at the research fields of Plant Protection Research Institute, Iran, at different locations in 2004-2005 to study the efficacy of different broadleaved herbicides to control weeds in wheat. Treatments were the full-season hand weeded and weed-infested controls, and post-emergence applications of florasulam plus flumetsulam at 8.75, 10.50, and 12.25ga.i./ha, 2,4-D plus carfentrazone-ethyl at 210, 245, 280, and 490ga.i./ha, bromoxynil plus MCPA at 75, 100, and 150ga.i./ha, 2,4-D at 560, 720, and 1120ga.i./ha, tribenuron methyl, and 2,4-D plus MCPA. Herbicides were applied at wheat tillering stage. Naturally occurring broadleaved weed populations were used in experiments. Results indicated that bromoxynil plus MCPA at 150ga.i./ha, 2,4-D plus MCPA, and 2,...

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change ...

Energy Technology Data Exchange (ETDEWEB)

GaN and Al{sub 1{minus}x}Ga{sub x}N films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10{sup 9} ohm-cm and 10{sup {minus}3}--10{sup {minus}8} cm{sup 2}/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

Energy Technology Data Exchange (ETDEWEB)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K{sub {alpha}} X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K{sub {alpha}} X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the ...

Energy Technology Data Exchange (ETDEWEB)

The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, ...

Energy Technology Data Exchange (ETDEWEB)

Room-temperature pulsed laser operation of (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P /(Al/sub 0.17/Ga/sub 0.83/)/sub 0.5/In/sub 0.5/P / (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved. The lasing wavelength is 626.2 nm, which is the shortest ever reported for an AlGaInP double heterostructure laser. Threshold current density is 50 kA/cm/sup 2/ for a diode with a 20-..mu..m-wide and 200-..mu..m-long stripe.