International Nuclear Information System (INIS)

The A-15 compounds with the highest critical temperatures and critical fields are stable only at high temperatures and sometimes are not stable at any temperature. Fabrication of such materials thus necessarily involves the creation and manipulation of metastable phases. It follows that the bronze matrix technique now under development for Nb_3Sn- and V_3Ga-based composite superconductors is not suitable for high-T/sub c/ materials of the Nb_3 (Al, Ge, Ga, Si) family. Alternative technologies will be necessary for such materials. Efforts to develop suitable alternatives, using Nb_3Al, are described.

International Nuclear Information System (INIS)

A survey is given on studies of the phonon spectra of several A-15 compounds by inelastic neutron scattering on polycrystalline samples. Comparison of the results for V_3Si, V_3Ge, N_3Ga, Nb_3Sn and Nb_3Al at 297 K lead to the conclusion that the interatomic forces are to a good approximation the same for all compounds with 4.75 valence electrons but are reduced by about 20% for those with 4.5 valence electrons. For all compounds investigated a softening of the phonon frequencies on cooling is observed which is most pronounced for those materials with the highest T/sub c/ values. From a comparison of the results with the experimentally determined Eliashberg function of Nb_3Sn information is derived about the energy dependence of the electron-phonon coupling function #alpha#"2.

International Nuclear Information System (INIS)

We have performed self-consistent (SC) band structure calculations for the A15 compounds V_3X and Nb_3X, X = Al, Ga, Si, Ge, and Sn, using the augmented-plane-wave (APW) method. Relativistic effects (except the spin-orbit interaction) have been included in each SC cycle, along with corrections to the usual muffin-tin approximation. The latter apply the APW wave functions outside of the muffin-tin spheres to compute the interstitial charge densities and potentials. The resulting interstitial potential has full cubic symmetry (no spherical averaging), although a spherically averaged muffin-tin form is retained inside the spheres. The final SC potentials were used to generate energies and wave functions on a cubic mesh of 35 k points in 1/48th of the Brillouin zone. These results were interpolated onto a finer mesh of 969 k points using a symmetrized Fourier method; the densities of states (DOS), N (E), were determined using ...

Energy Technology Data Exchange (ETDEWEB)

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization ...

International Nuclear Information System (INIS)

It has recently been shown that the superconducting properties of Nb-base A-15 compounds, A_3B, are severely degraded when exposed to high-energy (E>1 MeV) neutron irradiation at ambient reactor temperatures. In each case, superconducting transition temperatures, Tsub(c), and the Bragg Williams order parameters, S, were observed to decrease steadily with irradiations in excess of 10"1"8 nvt. During irradiation the A-15 structure is retained and subsequent isothermal annealing restores almost completely the compound's original Tsub(c) value. In this letter a correlation between B atom diameter and the recovery rates of Tsub(c) for the irradiated materials Nb_3Ge, Nb_3Ga, Nb_3Al and Nb_3Sn is reported. (Auth.).

Science.gov (United States)

The critical currents of A-15 phase Nb(,3)Sn, V(,3)Si, Nb(,3)Ge, V(,3)Ga, and Nb-Sn with a few at.% Ga and Al(,2)O(,3) have been measured at temperatures up to T(,c) and in magnetic fields up to 8T to study fundamental flux pinning interactions as a function of defect size and density. The samples are electron beam evaporated films typically 2 (mu)m thick. Their particular usefulness for this study is that they span the clean to dirty limits and their normal state resistivity and grain size can be controlled by deposition parameters. The grain boundaries are the defects most responsible for flux pinning. The electron scattering mechanism is based on the local change in the coherence length due to increased conduction electron scattering and is chosen from among several possible mechanisms to calculate the elementary pinning force at a grain boundary. A direct summation of the ...

International Nuclear Information System (INIS)

Nb_3Sn films (Tsub(c)=17.8 K) were obtained by implantation of Sn"+ ions into Nb films (1500 A thick) after subsequent annealing. The annealing temperature required for the formation of the A15 phase in the implanted films was about 100 K higher than for Nb-Sn sandwich films evaporated at 300 K. The influence of the Sn concentration and of the annealing temperature was studied by measuring the sample resistance. The Nb-Sn compounds formed during the annealing process were analysed by measurements of the Moessbauer-effect of "1"1"9Sn. The implantation method was also used to produce Nb-Ge films with a ratio Ge/Nb approximately 1/3. The Ge-concentration and the temperature of the Nb-target (300-1070 K) were varied. These variations as well as subsequent annealing at 600-850"0C did not lead to ...

International Nuclear Information System (INIS)

The information of phase transformation is attained by in situ XRD experiments leading to the knowledge of topological threshold in GeS2-Ga2S3 glasses. The turning point of phase transformation behavior is demonstrated to be glasses containing 14-15 mol% Ga2S3. To interpret it a network demixing model is further improved and proposed for the structure of these ternary or quasi-binary chalcogenide glasses. For the nearest-neighbor coordination environment of glass with a transitional composition of 85.7 mol% (6/7) GeS2.14.3 mol% (1/7) Ga2S3, six-coordinated [S3Ga-X-GaS3] units (X=S or None) are well isolated by the [GeS4] structures, which contributes to the decreasing of precipitation of Ga2S3 crystals in (100-x)GeS2-xGa2S3 (x?14.3) glasses corresponding to the experimental ...

International Nuclear Information System (INIS)

The electronic structure of the clusters [V_3Si_4]"1"2"-, [Nb_3Sn_4]"1"2"-[Mo_3Ge_4]"1"5"- in crystalline V_3Si, Nb_3Sn, Mo_3Ge compounds is calculated by the Extended Hueckel method. The influence of different types of radiation induced defects on the density of states at the Fermi level (the anti-site defects, the displacement of atoms in linear chains, the vacancy-interstitial type defects) is considered. (author).

International Nuclear Information System (INIS)

1 - Description of program or function: MCB-JEF2.2 is a continuous-energy cross section libraries in ACE Format suitable for the MCB-1C and MCNP codes. Libraries for various materials were generated at six different Temperatures, and cover the energy range up to 20 MeV. Format: ACE. Number of groups: Continuous energy. Nuclides: H-1, H-2, H-3, He-3, He-4, Li-6, Li-7, Be-9, B-10, B-11, C-nat., N-14, N-15, O-16, O-17, Na-23, F-19, Mg-nat., Al-27, Si-nat., P-31, S-32, S-33, S-34, S-36, Cl-nat, K-nat, Ca-nat., Ti-nat, V-nat, Cr-50, Cr-52, Cr-53, Cr-54, Mn-55, Fe-54, Fe-56, Fe-57, Fe-58, Co-59, Ni-58, Ni-59, Ni-60, Ni-61, Ni-62, Ni-64, Cu-nat, Ga-nat, Ge-72, Ge-73, Ge-74, Ge-76, As-75, Se-74, Se-76, Se-77, Se-78, Se-80, Se-82, Br-79, Br-81, Kr-78, Kr-80, Kr-82, Kr-83, Kr-84, Kr-85, Kr-86, Rb-85, Rb-86, Rb-87, Sr-84, Sr-86, Sr-87, Sr-88, Sr-89, Sr-90, Y-89, Y-90, Y-91, Zr-nat, Zr-90, ...

Energy Technology Data Exchange (ETDEWEB)

GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup ...

International Nuclear Information System (INIS)

Monte-Carlo simulations of 2-MeV #alpha#-particle channeling in Si_1_-_xSn_x alloys with 0#<=#x#<=#1 have been performed. The simulations are compared with measured channeling-angular scans for strained Si_0_._9_5Sn_0_._0_5 layers grown by molecular beam epitaxy (MBE). Agreement between simulated and measured angular scans can only be achieved if we assume a deviation of the crystal structure from the ideal one. This deviation can be attributed to a mosaic structure in the films and to an atomic-scale distortion of the crystal lattice due to an expected difference in the bond lengths between the Si-Si, Si-Sn and Sn-Sn atoms (such a difference in bond lengths has been observed in the epitaxial Si_1_-_xGe_x system). The contributions from both of these imperfections are estimated and discussed.

International Nuclear Information System (INIS)

The T/sub c/ behavior of vapor-deposited Nb_3Ge and Nb_3Sn is examined as a function of low-fluence alpha-particle irradiation. It is found that for Nb_3Sn with rho_0approx.15 #mu##OMEGA#-cm the T/sub c/ is insensitive to low doses of radiation, whereas Nb_3Ge with rho_0approx.50 #mu##OMEGA#-cm has its T/sub c/ depressed immediately with irradiation. It is suggested that the T/sub c/ behavior of A-15 superconductors in the regime of small dose is strongly influenced by the initial state of the sample. Furthermore, it is argued that the behavior of the T/sub c/ with dose can be qualitatively explained by considering a sharp structure in the density of states N(E), the smearing of which by defects leads to a depression in T/sub c/.

Energy Technology Data Exchange (ETDEWEB)

Measurements of {gamma}-ray, {gamma}{gamma}-coincidence and internal conversion electron spectra from the {sup 106}Cd({alpha},n{gamma}){sup 109}Sn reaction were carried out at 15-20 MeV {alpha}-particle bombarding energies with Ge(HP) {gamma}-ray and superconducting magnetic lens plus Si(Li) electron spectrometers. The energies, relative intensities, internal conversion coefficients and coincidence relations of the {sup 109}Sn transitions were determined, and a more complete, consistent level scheme has been deduced. Spin and parity values have been determined from the internal conversion coefficients, the bombarding-energy dependence of the side-feeding intensities of the states and the available {gamma}-ray angular distribution data. The level scheme was interpreted in the framework of the quasi-particle shell model.

Science.gov (United States)

General expressions for the interlattice displacements of the A-15 structure compounds are obtained in terms of the strain components making use of the deformation theory. The nature of the interlattice displacements of all the 8 atoms in the unit cell is discussed. It is found that the interlattice displacements occur in such a way that the pair of atoms along any linear chain move in opposite directions with equal magnitudes. Expression for the strain energy of these compounds is developed using deformation theory and this is compared with the strain energy expression from continuum theory to obtain the elastic constants. The theoretical values of the elastic constants fairly agree with the experimental values for V3Si, V3Ge and Nb3Sn.

Energy Technology Data Exchange (ETDEWEB)

The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been ...

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 ...

Science.gov (United States)

Superconductivity of A-15 Compounds in the-System Nb-Ge-Sn Synthesized by Chemical Vapor Deposition, -. J. Engelhardt and G. W. Webb, ...

International Nuclear Information System (INIS)

The amorphization of a quenched sample of the GaSb-II high-pressure phase was studied at ambient pressure by real-time neutron diffraction in the course of the sample heating from 100 K to room temperature at a rate of 0.4 K min-1. The transformation to the amorphous state begins at 140 K and is completed near room temperature. The ?-Sn type structure was shown to represent only the mean lattice of the high-pressure GaSb-II phase. The superstructure of this phase widely varied with temperature and is caused by the ordered displacement of atoms. The temperature range of the metastable crystalline phase relaxation is divided into three intervals according to the temperature dependence of the tetragonality ratio (c/a). At the boundaries of these temperature intervals, i.e. temperatures T = 170 and 230 K, two second-order phase transitions are observed. Anomalous heat and volumetric effects were observed earlier by means of ...

International Nuclear Information System (INIS)

The temperature dependence of T_1 spin-lattice relaxation time on "5"1V, "6"9Ga, "7"1Ga and Knight shift on "5"1V and "2"9Si nuclei in polycrystalline V_3Si, V_3Ga, V_3Ge and in the monocrystal V_3Si in normal state is investigated. For V_3Si and V_3Ga a rapid growth (T_1T)"-"1 is observed with temperature decrease while for V_3Ge the maximum (T_1T)"-"1 at T approximately equal to 60 K has been found. The temperature dependence peculiarities have been discussed on the basis of theoretical models available and zone structure calculations for A-15 compounds. The T_1 anisotropy and possibility of its experimental discovery are considered. Anisotropic contribution in (T_1T)"-"1 and contributions of d states of different symmetries into the electron state density at the Fermi level are estimated for V_3Si from T_1 measurements.

International Nuclear Information System (INIS)

The influence of 3d-transition metal impurities on the superconducting properties of the A-15 compounds V_3Si and V_3Ga have been investigated. In the case of V_3Si, the Fe impurities replacing V were found to have a local moment. A compensation effect was found in this case, resulting in a 20KOe increase in the upper critical field at dilute concentrations of Fe. It was demonstrated that long range order V_3Ga possessed higher transition temperature and upper critical field than found hitherto. Investigations on Nb_3Ge/sub 1-x/Ga/sub x/ films obtained by chemical vapor deposition has clearly shown the relation between the transition temperature and structural characteristics. The influence of generalized defects on the superconducting properties in A-15 type Nb_3X compounds has been discussed.

International Nuclear Information System (INIS)

Brittleness and poor low-temperature thermal conductivity of A-15 compounds remain the major obstacles preventing the effective use of these superconductors in large-scale engineering applications. In order to circumvent these difficulties, a new type of ductile superconducting filamentary alloy has been developed recently by a simple metallurgical process which consists of melting the constituent elements and subsequent cold working and appropriate heat treatment. These superconducting materials are essentially Cu-base alloys containing a few percent of A-15 phase such as Nb_3Sn or V_3Ga which is in the form of fine filaments embedded in the Cu matrix. The emphasis of this work is on the formation of the A-15 phase in the Cu-base alloys and its correlation with superconducting properties such as transition temperature and critical current density. The formation of Nb_3Sn, Nb_3Al, V_3Si, and V_3Ga will ...

Energy Technology Data Exchange (ETDEWEB)

Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the ...

International Nuclear Information System (INIS)

Data by Wiesmann et al. on the temperature coefficient of the upper critical field, dH/sub c/2(T)/dT, and the normal-state resistivity rho_0 near the superconducting transition temperature T/sub c/ are analyzed to estimate the bare density of states N (E/sub F/) as a function of structural disorder and T/sub c/ in various #alpha#-particle irradiated samples of A-15 Nb_3Ge and Nb_3Sn. By taking into account the change in the electron-phonon coupling strength with T/sub c/ and the effect of mass enhancement arising from the electron-phonon interaction, the results of the new analysis indicate that (i) the drop in N (E/sub F/) for Nb_3Ge is relatively small as T/sub c/ changes from approx. 21 to approx. 4 K, in agreement with a recent low-temperature specific-heat measurement; (ii) the value of N (E/sub F/) in Nb_3Sn decreases by a factor of approx. 4 as T/sub c/ varies from approx. 18 to approx. 3 K. The ...

Science.gov (United States)

A discussion of some of the difficulties with previous analyses of the resistivity of A-15 compounds is given. Precise high-temperature data on ..cap alpha..-particle- and electron-damaged Nb/sub 3/Ge and Nb/sub 3/Sn samples with different defect concentrations are presented here and analyzed in a simple way with use of a phenomenological model based on the idea that the ideal resistivity must approach some limiting value in the regime where the mean free path becomes comparable to the interatomic spacing.

International Nuclear Information System (INIS)

The #pi#g_9_/_2 band structure in "1"2"1Cs is obtained. The experiment was performed at the HI-13 MV tandem accelerator of China Institute of Atomic Energy. The excited states of "1"2"1Cs were populated via the reaction "1"1"2Sn("1"2C, p2n). The #gamma#-#gamma# coincidence data were taken with five BGO-AC HpGe detectors at beam energy of 60 Mev. The energy-level schemes of "1"2"1Cs is presented.

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the ...

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

Science.gov (United States)

For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 /sup 0/C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (lambda/sub P//sub L/ = 805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be ...

Energy Technology Data Exchange (ETDEWEB)

The goal of this project was to develop a new technology for preparing samples for transmission electron microscopy (TEM) on the basis of ion fine beam processing. For this purpose processes of ion-beam-assisted removal (sputtering), separation, sample handling and ion-beam-assisted chemical etching as well of system-inherent components were examined. As an alternative to a Ga-source a liquid-metal ion source based on a AuGeSi alloy was developed, characterised and used in the FIB 4400. [German] Aufgabe des Projektes war die Entwicklung einer neuen Technologie zur Probenpraeparation fuer die Transmissions-Elektronenmikroskopie (TEM) auf der Basis der Ionenfeinstrahlbearbeitung. Dazu wurden Prozesse der ionenstrahlgestuetzten Abtragung (Sputtern), der Abscheidung, des Probenhandling, des ionenstrahlgestuetzten chemischen Aetzens sowie systemeigener Komponenten untersucht. Als Alternative zur Ga-Quelle wurde eine ...

International Nuclear Information System (INIS)

Electron-beam codeposition of the elements to form certain high critical temperature superconducting materials, in particular A-15 compounds, has proven to be very useful in research directed at understanding and improving their superconducting properties. This work has used the close control of three or more evaporant sources to reproducibly make specimens that permit studies across selected regions of composition and phase space. The effect of composition and phase, together with the temperature and rate of deposition, on the growth morphology and superconducting properties has been studied. The superconducting properties measured include the critical temperature, ac loss, critical current density, and tunnel junction characteristics. The particular compounds studied include Nb_3Sn, Nb_3Ge, and V_3Si.

Science.gov (United States)

... and high-quality photospheric-phase Type II SN spectra to constrain core- collapse SN explosions, massive star evolution, and distances in the Universe ...

International Nuclear Information System (INIS)

Description of problem or function: Format: EXREM III; Nuclides: radioactive decay data on 252 Nuclides: 1H-3, 4Be-7, 6C-11, 6C-14, 7N-13, 8O-15, 9F-18, 11Na-22, 11Na-24, 12Mg-28, 13Al-28, 15P-32, 15P-33, 16S-35, 17Cl-36, 17Cl-38, 18A-37, 18A-39, 19K-40, 19K-42, 19K-43, 20Ca-45, 20Ca-47, 20Ca-49, 21Sc-46, 21Sc-47, 21Sc-49, 24Cr-51, 25Mn-52M, 25Mn-52, 25Mn-54, 26Fe-52, 26Fe-55, 26Fe-59, 27Co-56, 27Co-57, 27Co-58, 27Co-60, 28Ni-56, 28Ni-63, 29Cu-64, 30Zn-65, 30Zn-69M, 30Zn-69, 31Ga-67, 31Ga-68, 32Ge-77, 33As-76, 33As-77, 34Se-75, 35Br-80M, 35Br-80, 35Br-82, 35Br-83, 35Br-84, 36Kr-79, 36Kr-83M, 36Kr-85M, 36Kr-85, 36Kr-87, 36Kr-88, 37Rb-84, 37Rb-86, 37Rb-87, 37Rb-88, 37Rb-89, 37Rb-90M, 37Rb-90, 38Sr-85, 38Sr-87M, 38Sr-89, 38Sr-90, 38Sr-91, 38Sr-92, 38Sr-93, 39Y-87, 39Y-88, 39Y-90, 39Y-91M, 39Y-91, 39Y-92, 39Y-93, 40Zr-93, 41Nb-93M, 40Zr-95, 40Zr-97, 41Nb-95M, 41Nb-95, 41Nb-97M, 41Nb-97, 42Mo-99, 43Tc-99M, 43Tc-99, 44Ru-103, ...

Energy Technology Data Exchange (ETDEWEB)

The radioisotope production facilities and programs of the 86-Inch Cyclotron are reviewed in this presentation. The 86-Inch Cyclotron is designed to accelerate protons to a maximum energy of 22 MeV for internal targets. These protons are used to bombard metals that are electroplated, potted or soldered to water-cooled plates. Additionally, metals and inorganic compounds are bombarded in water-cooled tube targets. High radioisotope production rates are obtained by beam currents as large as 3 mA. Production rates for /sup 11/C, /sup 57/Co, /sup 67/Ga, /sup 68/Ge, /sup 109/Cd, and other isotopes are presented. The production of /sup 11/C for the carboxyl labeling of amino acids in cooperation with Oak Ridge Associated Universities is discussed. The 86-Inch Cyclotron is used for those programs requiring a larger beam current than is available from commercial cyclotrons.

Science.gov (United States)

The title compounds were prepared by arc-melting of the elemental components. Whereas NdPdSi and SmPdSi are already present after the arc-melting, alpha-GdPdSi and alpha-TbPdSi are formed only during the annealing at 800 degC. The four compounds crystallize with the recently reported alpha-YbAuGe type structure, which was refined for alpha-GdPdSi: Pnma, a=2108.0(4) pm, b=433.9(1) pm, c=745.6(1) pm, Z=12, R=0.026 for 1447 structure factors and 62 variable parameters. The lanthanoid atoms are situated between two-dimensionally infinite nets of condensed, puckered hexagons formed by alternating palladium and silicon atoms, with Pd-Si distances varying between 251 and 262 pm. In the third dimension these nets are linked via weak Pd-Pd (300 pm), Pd-Si (283 pm), and Si-Si bonds (261 pm). The refinements of the occupancy parameters suggested that ca. 2% of the palladium sites are occupied by silicon atoms and vice versa. The structural relationships between the two ...

CERN Document Server

Observations of the Type II-P (plateau) Supernova (SN) 1999em and Type IIn (narrow emission line) SN 1998S have enabled estimation of the profile of the SN ejecta, the structure of the circumstellar medium (CSM) established by the pre-SN stellar wind, and the nature of the shock interaction. SN 1999em is the first and only Type II-P detected at both X-ray and radio wavelengths. It is the least radio luminous and one of the least X-ray luminous SN ever detected (except for the unusual and very close SN 1987A). The Chandra X-ray data indicate non-radiative interaction of SN ejecta with a power-law density profile (rho \\propto r^{-n} with n ~ 7) with a pre-SN wind with a low mass loss rate of ~2 \\times 10^{-6} Msun/yr for a wind velocity of 10 km/sec, in close agreement with radio mass-loss rate ...

International Nuclear Information System (INIS)

We report on the specific heat and the thermopower of UPdSn and UCuSn, both of which order antiferromagnetically at low temperatures. The compounds show similar behaviour in the specific heat, and the large magnetic-entropy changes around T_N are evidence for a large degree of 5f-electron localization. For both compounds, we find that thermopower results are consistent with the findings for the electrical resistance. While for UCuSn very abrupt changes at 25 and 60 K are observed for both quantities, more continuous changes at the magnetic transitions (25 and 40 K) are found for UPdSn. (orig.).

International Nuclear Information System (INIS)

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga"+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).

International Nuclear Information System (INIS)

1975. USSR Zabrodskij, VA Nedavnij, SN INIS-mf--3677. Available from

Science.gov (United States)

The evolution of massive stars through hydrogen and helium burning is addressed. A set of stellar

Energy Technology Data Exchange (ETDEWEB)

The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good ...

Energy Technology Data Exchange (ETDEWEB)

The investigation of interfaces between thin organic films and metal surfaces is a field of highest interest because it represents the basis for future applications of organic electronic devices. In this context, phtalocyanines are of particular interest since repulsive intermolecular interaction was found recently for this group of organic molecules. Tin(II)-phtalocyanine (SnPc) is non-planar and can adsorb in two different geometries: with the Sn atom pointing downwards (Sn down) or upwards (Sn up). In our group different Pc molecules have previously been studied using several experimental techniques like SPA-LEED or XSW. Here we present STM studies of SnPc on Ag(111), taken at different coverages and temperatures, and discuss the results in the context of our previous findings. At low coverages the formation of chains can be observed for Sn down molecules ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

Superconductivity of binary alloys spanning the A-15 compounds V/sub 3/Si, V/sub 3/Ge, V/sub 3/Ga, and V/sub 3/Al and the pseudobinary derivatives of these stoichiometric compounds was surveyed by studying samples prepared by rf-sputtering from alloy cathodes. The possible formation of the hypothetical A-15 binaries ''V/sub 3/P,'' ''V/sub 3/B,'' and ''V/sub 3/C'' and their pseudobinary formation with V/sub 3/Si was also explored. Efforts to form these hypothetical alloys were not successful. The T/sub c/'s were measured resistively and the structure and lattice constants were determined by x-ray analysis. A maximum T/sub c/ of 11.7/sup 0/K was obtained for A-15 V/sub 3/Al, and the importance of a suitable deposition temperature and high sputtering pressures was examined. It is proposed that large variations of T/sub c/ among ...

CERN Document Server

The antiproton-nuclei annihilation at the momentum range from 0.70 GeV/c to 2.50 GeV/c

Energy Technology Data Exchange (ETDEWEB)

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Micro-scaled spherical CoSn{sub 2}/Sn alloy powders synthesized from oxides of Sn and Co via carbothermal reduction at 800 C were examined for use as anode materials in Li-ion battery. The phase composition and particle morphology of the CoSn{sub 2}/Sn alloy composite powders were investigated by XRD, SEM and TEM. The prepared CoSn{sub 2}/Sn alloy composite electrode exhibits a low initial irreversible capacity of ca. 140 mAh g{sup -1}, a high specific capacity of ca. 600 mAh g{sup -1} at constant current density of 50 mA g{sup -1}, and a good rate capability. The stable discharge capacities of 500-515 mAh g{sup -1} and the columbic efficiencies of 95.8-98.1% were obtained at current density of 500 mA g{sup -1}. The relatively large particle size of CoSn{sub 2}/Sn alloy composite powder is apparently ...

Energy Technology Data Exchange (ETDEWEB)

The purpose of this work was to investigate the optical properties of several high T/sub c/ compounds in the form of sputtered films. The measurements are used toward this end: optical absorptance (using a calorimetric technique near 4.2K), which yields (after Kramers-Kronig analysis) the complex dielectric function, and thermoreflectance (which measures the change in reflectance in the optical range when a 1 to 10/sup 0/K temperature wave is applied), performed at two ambient temperatures (80 and 300/sup 0/K), yielding the differential dielectric function. The sputtered films included Nb/sub 3/Ge, Nb/sub 3/Al, V/sub 3/Ga and Nb/sub 3/Ir. It is noted that Nb/sub 3/Ir is not a high T/sub c/ superconductor. The thermoreflectance on the bulk samples V/sub 3/Si, V/sub 3/Ge and single crystal Cr/sub 3/Si were not performed because the samples were not in the form of thin films. The thermomodulation studies are correlated with ...

Energy Technology Data Exchange (ETDEWEB)

The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native ...

British Library Electronic Table of Contents (United Kingdom)

SnO2/graphene nanocomposites have been fabricated by a simple chemical method. In the fabrication process, the control of surface charge causes echinoid-like SnO2 nanoparticles to be formed and uniformly decorated on the graphene. The electrostatic attraction between a graphene nanosheet (GNS) and the echinoid-like SnO2 particles under controlled pH creates a unique nanostructure in which extremely small SnO2 particles are uniformly dispersed on the GNS. The SnO2/graphene nanocomposite has been shown to perform as a high capacity anode with good cycling behavior in lithium rechargeable batteries. The anode retained a reversible capacity of 634 mA?h?g?1 with a coulombic efficiency of 98% after 50 cycles. The high reversibility can be attributed to the mechanical buffering by the GNS against...

Energy Technology Data Exchange (ETDEWEB)

The current status of cosmological observations is presented; and the light curves and radiation spectra from supernova SN1987A are used in comparison between expected and observed universal nucleosynthesis and star evolution data./aip/.

Energy Technology Data Exchange (ETDEWEB)

The L edge absorption of Pd, Ag, Sn, In, and CsI was measured in order to study the density of states and the unoccupied d states. 4 figures. (DLC)

Energy Technology Data Exchange (ETDEWEB)

Lithium storage metals and alloys can be suitable high-capacity anode materials for lithium-ion batteries, when the morphology is specifically designed. Here, we compare three different Sn/SnSb multiphase anode materials in powder form, which have been prepared in aqueous and organic solution by chemical precipitation using NaBH{sub 4} or Zn as reductive agents. The obtained morphologies, chemical compositions, and the electrochemical performance will be comparatively discussed. The variety of synthesis parameters which have an effect on the morphology of the obtained anode materials will be particularly highlighted.

Energy Technology Data Exchange (ETDEWEB)

The theory of reliability is used to develop statistical field data on malfunctions of units of sucker rod well pumps (UShSN). The indices of reliability of the UShSN are applied for establishment of the cause-effect links between the operating factors. Dependences of operating time on the depth of suspension of the pumps, mode of pumping out, degree of flooding of the oil, and twisting of the shafts are established for conditions of specific fields. The obtained relationships can be used in selecting and optimizing the work of the UShSN.

Energy Technology Data Exchange (ETDEWEB)

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

Science.gov (United States)

Excitonic transitions in metalorganic vapor phase epitaxially grown In[sub [ital x

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations that incorporate free energy of the vapor phase in order to determine the initial growth process of cubic GaN on GaN (001)-(4x1). The results suggest that a N-adsorbed structure appears at the initial growth stage and then Ga adsorbs on the N-adsorbed GaN (001)-(4x1) surface. Considering this process, we performed Monte Carlo simulations. The results suggest that the maximum point of Ga coverage after supplying a Formula Not Shown monolayer of atoms shifted toward a Ga-rich condition from V/III=1.0.

International Nuclear Information System (INIS)

The electronic structures of BaSnO_3, BaSbO_3, and BaPbO_3, calculated using an extended general-potential linearized augmented-plane-wave method, are reported. The electronic structures of BaSnO_3 and its 6s analog BaPbO_3 are found to be very different, explaining the absence of superconductivity in the Ba(Sn,Sb)O_3 system. These differences are explained by a combination of the relativistic lowering of the 6s states and ion-size effects. Muffin-tin-approximation augmented-plane-wave calculations for BaSnO_3 are also reported and the utility of the muffin-tin approximation for this and similar materials is discussed in terms of the differences between the two sets of calculations.

International Nuclear Information System (INIS)

The ternary stannides RE_3Ru_4Sn_1_3 (RE = La, Ce, Pr, Nd) were obtained by arc-melting of the elements. The polycrystalline samples were characterized by powder X-ray diffraction. The structures of three compounds were refined from single-crystal diffractometer data: Yb_3Rh_4Sn_1_3 type, Pm anti 3n, a = 977.74(3) pm, wR2 = 0.0379, 280 F"2 values for La_3Ru_4Sn_1_3, a = 971.34(9) pm, wR2 = 0.0333, 274 F"2 values for Ce_3Ru_4Sn_1_3, a = 970.68(8) pm, wR2 = 0.0262, 272 F"2 values for Nd_3Ru_4Sn_1_3 with 13 variables per refinement. The structures consist of three-dimensional networks of condensed RuSn_6_/_2 trigonal prisms with the RE (CN 16) and Sn2 (CN 12) atoms in two different types of cavities of the networks. The two crystallographically independent tin sites have been resolved by "1"1"9Sn Moessbauer spectroscopy. ...

British Library Electronic Table of Contents (United Kingdom)

Intermetallic compound (IMC) growth at the interface between a Sn coating and a Cu substrate with or without a Ni underlayer and its related stress state was evaluated by real-time measurements using the flexure beam method. For the Sn coating without a Ni underlayer, pyramid-shaped IMC grains of Cu6Sn5 grew along the grain boundaries of Sn from the Cu substrate, especially at the triple grain boundary junctions and the IMC grains rapidly increased their volume during the initial 3?days, During this time, the IMC growth rate was 2.3??m3/day and the compressive stress in the Sn coating rapidly developed and became saturated at about ?11?MPa. In contrast, platelet IMC grains of Ni3Sn4 formed at the surface of the Ni underlayer and the IMCs grew at a rate of 1.0??m3/day for the Sn/Ni coating....

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)b2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed ...

Energy Technology Data Exchange (ETDEWEB)

The effect of alloying Sn, Pb, As, Sb and P on the dezincification of commercial brass 60Cu-39Zn-1Pb has been investigated in 1% CuCl{sub 2} solution by immersion studies and electrochemical measurements. Specimens with a smooth surface finish exhibited more resistance to dezincification. Appreciable inhibitive effect on dezincification was observed for the 55Cu-40Zn-3Pb-2Sn brass composition. The galvanic coupling of lead phase with the matrix accelerated corrosion. To improve the dezincification resistance of the Sn containing brass, As, Sb and P were added at two different levels (0.05% and 0.1%). Brass of composition 48.95Cu-45Zn-5Pb-1Sn-0.05As was more resistant indicating the synergistic effect of Sn and As. The effect of 0.05 and 0.1% of arsenic addition with various concentrations of zinc was also studied. The alloy of composition 57.90Cu-40Zn-2Pb-0.1As showed better ...

International Nuclear Information System (INIS)

New ternary compounds on the ytterbium base YbPd_2Ge, YbPd_2Si, YbPdGe, YbPdSi, YbPtGe, YbPd_2Ge_2 and known compound YbPdSi_2 were obtained and investigated. Results of measuring the electric resistivity and magnetic susceptibility in the 4.2-300 K range are presented. It is found that YbPdGe, YbPtGe, YbPd_2Ge at low temperatures have magnetic phase transitions, investigations of which testify to dominant contribution of ferromagnetic ordering. The investigation results testify also to substantial effect of ytterbium crystalline environment on the physical properties of compounds under study.

Energy Technology Data Exchange (ETDEWEB)

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

Energy Technology Data Exchange (ETDEWEB)

We discuss the initial development of a concentrator device based on the GaInP/GaAs monolithic tandem cell structure. The very high one-sun efficiency of this device, coupled with its characteristic low operating current, make this a promising candidate for use under high concentration. Test results for a prototype device are presented. This device achieves an efficiency of 29.5% at a concentration of 102 suns.

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.

International Nuclear Information System (INIS)

The detailed features of the calculated energy-level schemes and of the single-particle, orbit-occupancy properties of the low-lying levels of the N=50 isotones "8"0Zn, "8"1Ga, "8"2Ge, "8"3As, "8"4Se, "8"5Br, "8"6Kr, and "8"7Rb are presented and discussed. These results are obtained with a new effective Hamiltonian operator obtained empirically from an iterative fit to experimental energies taken from all experimentally studied (A=82--96) N=50 nuclei. The model space for the calculations consists of active 0f/sub 5/2/, 1p/sub 3/2/, 1p/sub 1/2/, and 0g/sub 9/2/ proton orbits relative to a nominal "7"8Ni core. This space is truncated internally by restricting the number of particles excited from the negative-parity orbits into the g/sub 9/2/ orbit to be no greater than four. The typical structures predicted for these lighter N=50 isotones are found to be dominated by well-mixed combinations of fp-orbit configurations, with the g/sub 9/2/ orbit ...

Energy Technology Data Exchange (ETDEWEB)

Magneto-striction and magnetic form factors in 5f itinerant antiferromagnets UNiGa{sub 5} and UPtGa{sub 5} are studied by means of neutron scattering. Remarkable magneto-striction was observed around T{sub N}, indicating large spin-orbit coupling in the itinerant system. The orbital magnetic moment is found to be strongly suppressed due to the hybridization of uranium 5f with Ga-4p electron.

Energy Technology Data Exchange (ETDEWEB)

CERN has encouraged the US-LARP collaboration to participate in Phase I of the LHC luminosity upgrade by analyzing the benefits gained by using Nb3Sn technology to replace the functionality of select NbTi magnets that CERN is committed to construct. Early studies have shown that the much higher gradients (shorter magnetic lengths) and temperature margins (quench stability) of Nb3Sn magnets compared to their NbTi counterparts is favorable--allowing the insertion of additional absorbers between Q1 and Q2, for example. This paper discusses the relative merits of the NbTi and Nb3Sn options.

Science.gov (United States)

Calcium stannate (CaSnO3) powders with the distorted perovskite structure have been synthesized by solid state and the sol-gel methods and their electrochemical performance was compared. The sol-gel CaSnO3 shows stable cycling performance with a reversible capacity of 430-440 mAh/g (0.005-1.0 V; 60 mA/g) up to 50 cycles. The role of preparatory conditions, morphology and cycling conditions (current density and potential window) on the anodic performance of the compounds are addressed.

Energy Technology Data Exchange (ETDEWEB)

The solubility of Sn(IV) oxide was determined in a dilute NaClO{sub 4} solution with pH 2 through 12 at ambient temperature. Both oversaturation and undersaturation experiments were carried out in an inert gas glovebox where the concentration of the oxygen and carbon dioxide were less than 1 ppm. The solubility of Sn(IV) oxide was 3 {times} 10{sup {minus}8} mol/l at neutral pH, and increased at pH > 7.5. Equilibrium constants of soluble reactions were calculated from the experimental data, using curve fitting method. The study suggests that the solubility of Sn(IV) oxide would be higher than that provisionally used in current safety assessments of HLW disposal sites.

International Nuclear Information System (INIS)

English 2005 p. 240 Russian Federation Fadeev, SN Gridnev, KA Institute

Science.gov (United States)

Development efforts have been undertaken to improve the processing and structural efficiencies of

Science.gov (United States)

... Accession Number : ADD120492. Title : Environmental Cracking of the Alpha-Beta Titanium Alloy, Ti-6Al-6V-2Sn,. Corporate ...

Energy Technology Data Exchange (ETDEWEB)

With the ever increasing awareness of the toxicity of Pb, significant pressure has been put on the electronics industry to get the Pb out of solder. This work pertains to the development and characterization of an alloy which is Pb-free, yet retains the proven positive qualities of current Sn-Pb solders while enhancing the shortcomings of Sn-Pb solder. The solder studied is the Sn-4.7Ag-1.7Cu wt% alloy. By utilizing a variety of experimental techniques the alloy was characterized. The alloy has a melting temperature of 217{degrees}C and exhibits eutectic melting behavior. The solder was examined by subjecting to different annealing schedules and examining the microstructural stability. The effect of cooling rate on the microstructure of the solder was also examined. Overall, this solder alloy shows great promise as a viable alternative to Pb-bearing solders and, as such, an application for a patent has been filed.

International Nuclear Information System (INIS)

Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI_3 or BBr_3 discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates (>6000 Angstrom min"-"1) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI_3 or BBr_3 content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO_2 and SiN_x of #>=#8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and AlInP. copyright 1998 American Vacuum Society.

British Library Electronic Table of Contents (United Kingdom)

Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO"2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H"2, H"2O and CO"2. The CO"2 outgassing could be correlated with CF"4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF"4-plasma-cleaned interface.

Science.gov (United States)

Room-temperature continuous-wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 /sup 0/C for a device with an 8-..mu..m-wide and a 250-..mu..m-long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T/sub 0/ was 138 K under cw operation. The wafer with the MQW structure composed of 100-A-thick GaInP wells and 40-A-thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.

International Nuclear Information System (INIS)

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

Science.gov (United States)

Useful bipolar transistor action over the temperature range from -195 to 550 /sup 0/C has been demonstrated for heterojunction bipolar transistors in the GaP/AlGaP chemical system. This represents the highest temperature at which useful bipolar solid-state transistor action has ever been demonstrated in any material. Improvements in the materials technology and in the understanding of device characteristics at high temperatures were essential to the successful fabrication of these devices. These results demonstrate that the GaP/AlGaP heterojunction system is an excellent technology for active electronic components operated at high temperatures.

Energy Technology Data Exchange (ETDEWEB)

Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.

International Nuclear Information System (INIS)

The band offsets and subband levels in a double quantum well layer for a 660 nm-Ga_0_._4In_0_._6P/(Al_0_._5Ga_0_._5)_0_._5In_0_._5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical calculation of the Schroedinger equation for the layer structure by varying the conduction band offset and compared with the measured photoreflectance spectra. The conduction band offset ratio is determined to be 0.5+0.03. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Science.gov (United States)

It is shown that the extended softening in k space of the [111] transverse acoustic phonon in Nb3Sn seen recently by neutron measurements is in agreement with the predictions of a phenomenological Landau description of the structural phase transition in the A-15 compounds. This indicates the feasibility of a calculation of the partial phonon density of states of modes directly coupled to the order parameter driving the structural transition, as a function of temperature.

Science.gov (United States)

The effect of solution treatment temperature and oxygen content on the microstructure and age hardening response of the metastable beta alloy Ti-11.5Mo-6Zr-4.5Sn have been studied. Kinetics of formation of the equilibrium alpha-phase and the metastable om...

Energy Technology Data Exchange (ETDEWEB)

The oxide colloidal route, developed in the laboratory for mono-metallic catalysts, consists in preparing a metallic oxide hydro-sol which leads to the supported catalyst after deposition onto a support and an activation stage. In this work, this method has been adapted to the preparation of alumina supported bimetallic Pd-Sn catalysts to determine its interest for the control of the properties of the bimetallic phase (size, composition and structure). In the preliminary study concerning tin oxide sols, SnO{sub 2} (size=2,3 nm) and Sn{sub 6}O{sub 4}(OH){sub 4} (size = 25 nm) nano-particles were synthesized by neutralization respectively for tin(IV) and tin(H). The control through the pH of the aggregation of the PdO and SnO{sub 2} particles revealed that increasing oxide solubility promotes integral re-dispersion of the oxide particles. To synthesize oxide bimetallic sols, three strategies were defined. ...

Energy Technology Data Exchange (ETDEWEB)

In this work, {beta}-SnS{sub 2} thin films have been prepared on glass substrates by the spray pyrolysis technique using an alcohol solution which contains tin chloride (SnCl{sub 4}) and thiourea (SC(NH{sub 2}){sub 2}) as precursors. The structural study shows that {beta}-SnS{sub 2} thin film prepared using optimal experimental conditions: substrate temperature T{sub s} = 280 deg. C and the concentration ratio of sulfur and tin elements in the spray solution x = [S]/[Sn] = 2.5, crystallizes in the hexagonal phase with a strong (0 0 1) X-ray diffraction line. In the same way, microprobe analyses (EPMA) as well as X-ray photoelectron spectroscopy (XPS) show the presence of undiserable phase of SnO{sub 2}. From the transmission and reflectance spectra, the band gap energy is 2.65 eV. On the other hand, the photothermal properties of such films have been studied, the thermal ...

Energy Technology Data Exchange (ETDEWEB)

With the help of the symmetry at the P point, we have determined the relations between the force constants and the moduli of elasticity for A-15 compounds. Based on these relations, a semi-experimental method for the study of the lattice dynamic behaviors of A-15 compounds is developed. Numerical calculations of the phonon spectrum of Nb/sub 3/Sn and its temperature dependence have been made, and they are in good agreement with the experimental data.

International Nuclear Information System (INIS)

Bulk electronic properties and photoelectron spectra of UNiAl and UPdSn are discussed in terms of varying degree of the localization of 5f states. For UPdSn with #gamma#=5 mJ/mol K"2, localized 5f states can be expected, but photoemission shows still the presence of 5f states at E_F. (orig.).

Energy Technology Data Exchange (ETDEWEB)

Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.

International Nuclear Information System (INIS)

We have investigated the possibility to use a microwire of BiSn to design an anisotropic thermoelectric generator. The glass-coated microwire of pure and Sn-doped bismuth was obtained by the Ulitovsky method; it was a cylindrical single-crystal with orientation (1011) along the wire axis; the C3 axis was inclined at an angle of 70 degrees to the microwire axis. It is found that doping of bismuth wires with tin increases the thermopower anisotropy in comparison with Bi by a factor of 2 - 3 in the temperature range of 200-300 K. For a Bi microwire with a core diameter of 10 ?m with a glass coating with outer diameter of 35 ?m, the transverse thermopower is ? 150 ?V/(K*cm); for BiSn, 300 ?V/(K*cm). The design of an anisotropic thermogenerator based on BiSn microwire is proposed. The miniature thermogenerator will be efficient for power supply of devices with low useful current. In addition to the ...

Science.gov (United States)

Certain materials, especially Sn, passivate the rare earth-exchanged Y zeolite (REY) used in petrochemical fluid-cracking catalysts against vanadium degradation caused by V impurities in the feed oil. The mechanism of passivation was investigated here from the standpoint of high-temperature oxide acid-base reaction; i.e., where the controlling factors were considered to be Lewis acid-base reactions between V{sub 2}O{sub 5}, the RE oxides, SnO{sub 2}, etc. Molten salt tests at 680{degree}C showed SnO{sub 2}, presumably because of its acidic nature, to be essentially nonreactive with V{sub 2}O{sub 5} or Na{sub 2}O-V{sub 2}O{sub 5} compounds. A hypothesis was developed to explain how the passivation effect by Sn might result from the unique resistivity of SnO{sub 2} to reaction with V{sub 2}O{sub 5}.

CERN Document Server

We present a theoretical framework for formal study of systematic effects in Supernovae Type Ia (SN Ia) that utilizes 2-d simulations to implement a form of the deflagration-detonation transition (DDT) explosion scenario. The framework is developed from a randomized initial condition that leads to a sample of simulated SN Ia whose Ni56 masses have a similar average and range to those observed, and have many other modestly realistic features such as the velocity extent of intermediate mass elements. The intended purpose is to enable statistically well-defined studies of both physical and theoretical parameters of the SN Ia explosion simulation. We present here a thorough description of the outcome of the SN Ia explosions produced by our current simulations. A first application of this framework is utilized to study the dependence of the SN Ia on the Ne22 content, which is known to be ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

International Nuclear Information System (INIS)

... dpg-tagungen.de Dresden (Germany) 27-31 Mar 2006 0420-0195 VDPEAZ

Energy Technology Data Exchange (ETDEWEB)

This paper discusses design considerations for the recently introduced GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140--180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. The authors focus on the issues of grid design, top-cell thickness, and antireflectance coat. They also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.

International Nuclear Information System (INIS)

Russian 1997 p. 266-267 Russian Federation Ushakova, GA

International Nuclear Information System (INIS)

... angiotensin gallium 67 lungs lysozyme patients sarcomas beta decay

International Nuclear Information System (INIS)

The fluorescence, absorption, infrared and Raman spectra of Sm_3Ga_5O_1_2 have been investigated. The energy-level schemes in the energy range 3000-16000 cm"-"1 have been determined. The number and symmetries of the Sm_3Ga_5O_1_2 crystal normal mode have been obtained by the molecular site group analysis and their comparison with the experiment has been made.

International Nuclear Information System (INIS)

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In_xAl_yGa_1_-_x_-_yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 #mu#m In_xAl_yGa_1_-_x_-_yN alloy grown on 0.5-1.0 #mu#m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In_xAl_yGa_1_-_x_-_yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In_xAl_yGa_1_-_x_-_yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have ...

UK PubMed Central (United Kingdom)

Before the influence of divergent factors on gross efficiency (GE) [the ratio of mechanical power output (PO) to metabolic power input (PI)] can be assessed, the variation in GE between days, i.e. the...Full Text Available

International Nuclear Information System (INIS)

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

International Nuclear Information System (INIS)

In YbPd_2Si_2, the valence of Yb is very close to 3+. Ge substitution of Si induces a negative pressure effect and the valence of Yb decreases. For the low Ge concentrations studied, the spin fluctuation temperature T_s_f increases and #chi#4f, the Yb derived 4f susceptibility, obeys the scaling law #chi#4f(T)=F(T/T_s_f). (orig.).

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate ...

Energy Technology Data Exchange (ETDEWEB)

(Al{sub y}Ga{sub 1{minus}y}){sup 1{minus}x}In{sub x}P semiconductor alloys lattice-matched to GaAs are widely used in visible optoelectronic devices. One of the most recent developments in this area is the AlGaInP-based red vertical cavity surface emitting laser (VCSEL). These lasers, which employ AlGaInP active regions and AlGaAs distributed Bragg reflectors (DBRs), have demonstrated continuous-wave (CW) lasing over the 630--690 nm region of the spectrum. Applications for these lasers include plastic fiber data communications, laser printing and bar code scanning. In this paper, the authors present an overview of recent developments in the processing and performance of AlGaInP based VCSELs. This overview will include a review of the general heterostructure designs that have been employed, as well as the performance of lasers fabricated by both ion implantation ...

British Library Electronic Table of Contents (United Kingdom)

This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl45H2O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, `in- situ doping' resulted i...

Energy Technology Data Exchange (ETDEWEB)

In a work studying the corrosion and tarnishing properties of a variety of copper alloys, the alloy Cu-A110-Sn5 was found to show an excellent corrosion resistance in neutral solutions, where copper and most conventional Cu alloys are covered by thick nonprotective surface layers. The passive films formed on this alloy were characterized with electrochemical and photoelectrochemical methods. The pH dependence of the passivation and of the photocurrent behavior of the Cu-A110-Sn5 alloy clearly indicates that the passivity of this alloy in neutral solutions is due to a formation of passive film enriched with aluminum oxide. At corrosion potential a strong increase in the corrosion resistance with time is due to a gradual enrichment of the surface with aluminum oxide. This can be seen in the photocurrent spectra which change from cooper-type to aluminum-type with time. At higher applied potentials the formation of an aluminum-type oxide film is ...

Energy Technology Data Exchange (ETDEWEB)

Nanosized CaSnO{sub 3} is synthesized by a hydrothermal process and characterized by X-ray diffraction (XRD), Raman spectroscopy, and scanning electron microscopy (SEM). The SEM observation shows the sample has a porous flowerlike morphology. The electrochemical results exhibit that the stable and reversible capacity of 547 mAh g{sup -1} is obtained after 50 cycles at 60 mA g{sup -1} (0.1 C) and the corresponding charge capacity is determined to be 316 mAh g{sup -1} at the current density of 2.5 C. Cyclic voltammetry and electrochemical impedance spectroscopy data are analyzed to complement the galvanostatic results. The observed excellent performance is attributed to the porous structure and large surface area of flowerlike CaSnO{sub 3}.

British Library Electronic Table of Contents (United Kingdom)

Abstract Nanocomposites based on SnO2 with carbon scaffold were used as highly porous anode films on Ni substrates. The films were obtained by in situ deposition of the particles without any binder or excess carbon black avoiding any secondary treatment. Compared to similarly prepared uncoated SnO2 nanoparticles as well as conventionally prepared powder samples the capacity loss of the in situ deposited nanocomposite films is significantly reduced. Thus, this newly developed anode material combined with in situ film formation is a promising approach for high capacity anodes in Li-ion batteries. SEM-micrograph of a SnO2/C nanoparticle film.

CERN Document Server

We present constraints on theoretical models of Type Ia SNe using spatially resolved ASCA X-ray spectroscopy of four galaxy clusters: Abell 496, Abell 2199, Abell 3571 & Perseus. All four clusters have central Fe abundance enhancements and an ensemble of abundance ratios are used to show that most of the Fe in the central regions of the clusters comes from SN Ia. At the center of each cluster, simultaneous analysis of spectra from all ASCA instruments shows that the Ni to Fe abundance ratio (normalized by the solar ratio) is ~ 4. We use the Ni/Fe ratio as a discriminator between SN Ia explosion models: the Ni/Fe ratio of ejecta from the "Convective Deflagration" model W7 is consistent with the observations, while those of "delayed detonation" models are not consistent at the 90% confidence level.

International Nuclear Information System (INIS)

The self-consistent-pseudopotential method is applied to the A-15 compounds Nb_3Ge and Nb_3Al. The Fermi energy is found to lie in a region of very flat bands having a bonding character along the Nb chains. Comparison with the band structures of the (nonexistent) A-15 materials Nb_3Nb and Nb_3/sup asterisk/ (chains only) suggest that the p states on the Ge and Al atoms are instrumental in determining the position of the Fermi level. There is little evidence for rigid-band behavior in the Nb_3Al/sub x/Ge/sub 1-x/ system. Studies of the effects of chain dimerization in Nb_3Ge suggest that states at R and M are more likely candidates to participate in structural transitions than states at GAMMA or X.

International Nuclear Information System (INIS)

The optical properties and microstructure of germanium (Ge) films, prepared by ion-assisted deposition (IAD) process, were investigated. The Ge films were deposited on sapphire and silicon substrates, with and without simultaneous Ar+ bombardment. Higher index films, with a refractive index 7.7% larger than that of the single crystalline Ge wafer, were obtained with the IAD process. The density of the IAD film could be 1.5% greater than that of the e-beam film. The results of the heat treatment indicated that the optical and structural properties of the IAD films were more stable. Ge nano-crystallites could be observed under high ion power density, which induced a crystalline structure in the Ge thin films. The average size of the nano-crystallites, as determined from both the X-ray diffraction data and the transmission electron microscopy images, showed that no systematic change ...

Science.gov (United States)

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a ...

International Nuclear Information System (INIS)

Ultrafine particles of Sn-Sb alloys with different chemical composition have been prepared by hydrogen plasma-metal reaction. Structure, morphology, size and chemical composition of the Sn-Sb ultrafine particles were investigated by transmission electron microscopy, X-ray diffraction, BET gas adsorption, and induction-coupled plasma spectroscopy. It was found that all the particles have spherical shapes, with average particle size in the range of 100-300 nm. The electrochemistry properties as an alternative anode material for lithium-ion batteries have been characterized by constant current cycling and cyclic voltammetry. Electrochemical measurements showed that the alloys with Sn-46.5 at.% Sb have best reversible capacity and capacity retention. It exhibited a high reversible lithium-ion storage capacity of 701 mAh g"-"1 in the initial cycle, which has remained at 81% (i.e., 566 mAh g"-"1) of its original capacity after 20 ...

Science.gov (United States)

The applicability of isothermal solidification as a contacting method for solar cells was proved for the systems AgSn and AuIn. The process is advantageous in that it requires no fluxes, no inert gases, and no pretreatment of the components. The IE contac...

Energy Technology Data Exchange (ETDEWEB)

We have created quasiprojectiles of varying isospin via peripheral reactions of {sup 28}Si+{sup 112}Sn and {sup 124}Sn at 30 and 50 MeV/nucleon. The quasiprojectiles have been reconstructed from completely isotopically identified fragments. The difference in N/Z of the reconstructed quasiprojectiles allows the investigation of the disassembly as a function of the isospin of the fragmenting system. The isobaric yield ratio {sup 3}H/{sup 3}He depends strongly on N/Z ratio of quasiprojectiles. The dependences of mean fragment multiplicity and mean N/Z ratio of the fragments on N/Z ratio of the quasiprojectile are different for light charged particles and intermediate mass fragments. Observation of a different N/Z ratio of light charged particles and intermediate mass fragments is consistent with an inhomogeneous distribution of isospin in the fragmenting system.

International Nuclear Information System (INIS)

(Dec 1970). United States Feeney, JA Boeing Co., Renton, Wash.

CERN Document Server

We have discovered seven type Ia cluster supernovae (SNe) in the course of the Wise Observatory Optical Transients Search in the fields of galaxy clusters with redshifts between z=0.06 and z=0.2. Two of these events, SN 1998fc in Abell 403 (z=0.10) and SN 2001al in Abell 2122/4 (z = 0.066), have no obvious hosts. Both events appear projected on the halos of the central cD galaxies, but have velocity offsets of 750-2000 km/s relative to those galaxies, suggesting they are not bound to them. We use deep Keck imaging of the locations of the two SNe to put upper limits on the luminosities of possible dwarf hosts, M_R > -14 mag for SN 1998fc and M_R > -11.8 mag for SN 2001al. The fractions of the cluster luminosities in dwarf galaxies fainter than our limits are less than 3 x 10^-3 and 3 x 10^-4, respectively. Thus, 2/7 of the SNe would be associated with less than 3 x 10^-3 of the luminosity ...

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...

International Nuclear Information System (INIS)

Ga_0_._6In_0_._4P/(Al_0_._8Ga_0_._2)_0_._4In_0_._6P strain-compensated multiple quantum wells (SCMQW) and Ga_0_._5In_0_._5P/(Al_0_._4Ga_0_._6)_0_._5In_0_._5P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

Energy Technology Data Exchange (ETDEWEB)

Continuous-wave (cw) operation at temperatures up to 23 /sup 0/C of an Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P/Ga/sub 0.52/In/sub 0.48/P/ Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 /sup 0/C for a device with a 10-..mu..m-wide and 250-..mu..m-long ion-implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 /sup 0/C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (approx.0.3 ..mu..m) p-AlGaInP layer and a p-Al/sub 0.76/Ga/sub 0.24/As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.

Energy Technology Data Exchange (ETDEWEB)

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

Energy Technology Data Exchange (ETDEWEB)

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the ...

Energy Technology Data Exchange (ETDEWEB)

A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.

Energy Technology Data Exchange (ETDEWEB)

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

Science.gov (United States)

Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.

International Nuclear Information System (INIS)

The crystal field splitting of the "3H_4 ground state of the Pr ion in PrFeO_3 and PrGaO_3 has been investigated by inelastic scattering of the thermal neutrons. At several temperatures the transitions have been measured by TAS and TOF methods for polycrystalline PrFeO_3 and by the TOF method for polycrystalline PrGaO_3. Energy level schemes which are different for these materials are given. (author).

Science.gov (United States)

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

Science.gov (United States)

Continuous wave operation of an Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P /Ga/sub 0.52/In/sub 0.48/P /Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 ..mu..m and the threshold current was 55 mA for a diode with a nitride-insulated, 8-..mu..m-wide and 250-..mu..m-long stripe geometry.

Energy Technology Data Exchange (ETDEWEB)

We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and ...

Energy Technology Data Exchange (ETDEWEB)

We report measurements of the temperature dependence of the threshold current of GaAs, 1.3-..mu..m InGaAsP, and 1.5-..mu..m InGaAsP double heterostructure lasers using short electrical pulses. T/sub 0/approx.200 K is observed for all the lasers. These high T/sub 0/ values show that the carrier density at threshold does not increase rapidly with increasing temperature in any of the lasers studied and thus the observed low cw T/sub 0/ of InGaAsP lasers is primarily due to a decrease of the carrier lifetime at threshold with increasing temperature.

International Nuclear Information System (INIS)

A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.

Energy Technology Data Exchange (ETDEWEB)

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

British Library Electronic Table of Contents (United Kingdom)

To eliminate their classical brittleness and flexibility problems zein films were plasticized by incorporation of different phenolic acids (gallic acid (GA), p-hydroxy benzoic acid (HBA) or ferulic acids (FA)) or flavonoids (catechin (CAT), flavone (FLA) or quercetin (QU)). The use of GA, CAT, FA and HBA at 3 mg/cm2 eliminated the brittleness of films and gave highly flexible films showing elongations between 135% and 189%, while FLA and QU caused no considerable effect on film elongation. The films containing FA and HBA showed extreme swelling and lost their structural integrity when hydrated in distilled water. In contrast, CAT and GA containing films maintained their integrity following hydration. Most of the GA (up to 93%) and a considerable portion of CAT (up to 60%) in the films exis...

International Nuclear Information System (INIS)

Russian 1997 p. 263-264 Russian Federation Tkach, VL Ushakova, GA

British Library Electronic Table of Contents (United Kingdom)

Within the framework of the effective-mass approximation, using a variational method, we have calculated the effect of intense laser radiation on the binding energy of the shallow-donor impurities in a Ga1- x In x N y As1- y /GaAs single quantum well for different nitrogen and indium mole concentrations. Our numerical results show that the binding energy strongly depends on the laser intensity and frequency (via the laser dressing parameter) and it also depends on the nitrogen and indium concentrations. Impurity binding energy under intense laser fields can be tuned by changing the nitrogen and indium mole fraction.

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

Molecular beam epitaxy (MBE) grown Ge nanodots are found to come in a clear trimodal island distribution of huts, pyramids, and domes when grown on (001)Si at 550 deg. C. The island types appear in this order as Ge coverage increases and for a certain coverage all three types are found to coexist at this growth temperature. Previously Ge nanodots have mostly been divided into huts and domes at growth temperatures below 600 deg. C, or pyramids and domes above 600 deg. C. The (105) faceted pyramidal and elongated huts and the multifaceted domes are well known, but a distinction has not previously been seen between huts and a separate size distribution of similarly (105)-faceted pyramidal nanodots twice the size of huts, at temperatures below 600 deg. C. The 20-25 nm wide huts also appear to be the smallest obtainable self-assembled Ge dots on (001)Si, in accordance with predictions based on ...

Energy Technology Data Exchange (ETDEWEB)

Many investigations of anode materials for lithium-ion secondary batteries have been carried out in order to obtain batteries of higher capacity and energy density. Recently, SnO-based glasses, which were prepared by the usual melt quenching technique, have been proposed as a new anode for lithium-ion secondary batteries by Idota et al. It has been reported that the capacity per unit weight was higher than 600 mAh g{sup {minus}1} and the capacity per unit volume was higher than 2,200 mAh cm{sup {minus}3}, values which are almost double those for carbon materials used as anodes of commercial lithium-ion batteries at present. Thus SnO-based glasses have attracted much interest as high-capacity anode materials for lithium-ion secondary batteries. Amorphous materials in the system SnO-B{sub 2}O{sub 3}-P{sub 2}O{sub 5}, with or without the addition of Li{sub 2}O, were synthesized by mechanical milling treatment of starting ...

Energy Technology Data Exchange (ETDEWEB)

A simple highly efficient procedure has been developed for recovery of thallium radioisotopes from lead and bismuth targets irradiated by 1-GeV protons. The procedure is based on the use of extraction chromatography. The cross-sections have been determined for formation of {sup 200}Pb, {sup 201}Pb, {sup 202m}Pb, and {sup 203}Pb radioisotopes in targets from lead with natural isotopic composition, irradiated by 1-GeV protons.

Energy Technology Data Exchange (ETDEWEB)

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge{sup +}-implanted (0 0 1)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.

Energy Technology Data Exchange (ETDEWEB)

The RSS collaboration has measured the spin structure functions of the proton and the deuteron at Jefferson Lab using the Hall C HMS spectrometer, a polarized electron beam and a polarized solid target. The asymmetries A and A were measured in the region of the nucleon resonances (0.82 GeV < W < 1.98 GeV) at an average four momentum transfer of Q2 = 1.3 GeV2. The extracted spin structure functions and their kinematic dependence will make a significant contribution in the study of higher-twist effects and polarized duality tests. A description of the experiment and the latest findings of the analysis will be presented.

CERN Document Server

PAMELA is a satellite borne experiment designed to study with great accuracy cosmic rays of galactic, solar, and trapped nature in a wide energy range (protons: 80 MeV-700 GeV, electrons 50 MeV-400 GeV). Main objective is the study of the antimatter component: antiprotons (80 MeV-190 GeV), positrons (50 MeV-270 GeV) and search for antinuclei with a precision of the order of $10^{-8}$). The experiment, housed on board the Russian Resurs-DK1 satellite, was launched on June, $15^{th}$ 2006 in a $350\\times 600 km$ orbit with an inclination of 70 degrees. In this work we describe the scientific objectives and the performance of PAMELA in its first two years of operation. Data on protons of trapped, secondary and galactic nature - as well as measurements of the December $13^{th}$ 2006 Solar Particle Event - are also provided.

Energy Technology Data Exchange (ETDEWEB)

We report the influence of a small quantity of Cl[sub 2], which enhanced the selectivity of silicon-selective epitaxial growth (Si-SEG) in UHV-CVD using Si[sub 2]H[sub 6], on both the epitaxial growth rate and the B-doping properties for each Si and Si[sub 1-x]Ge[sub x] film. The small quantity of Cl[sub 2] inhibited the Si, Ge and B incorporation, while the selectivity was enhanced. However, it was found, in the case of Si[sub 1-x]Ge[sub x]-SEG using Cl[sub 2], that the reduction ratio of both the growth rate and the B incorporation were smaller than those of Si-SEG with the selectivity still more enhanced. (orig.)

International Nuclear Information System (INIS)

Short communication. 2 figs.

Science.gov (United States)

... ge aircraft engines (geae) has taken to development an induction plasma deposition (ipd) processing method for the fabrication of ti6242/sic mmc ...

Science.gov (United States)

Includes airports, hangars and runways; aircraft repair and overhaul ...... F 100-PW-220 and. Flt0-GE.t00 engines: A case study ol risk assessment ...

Science.gov (United States)

Thermal wet oxidations of GaP and Al{sub 0.4}Ga{sub 0.6}P at 650 degree sign C for various times have been performed. Comparisons are made on oxidation rates and post oxidation morphology. Transmission electron microscopy shows that when oxidizing GaP, polycrystalline monoclinic GaPO{sub 4}{center_dot}2H{sub 2}O forms without noticeable loss of phosphorus. Oxidation for 6 h or more leads to poor morphology resulting in cracks and detachment. A thickness expansion of about 2.5-3 times is noticed as a result of oxidation. In contrast, oxidized Al{sub 0.4}Ga{sub 0.6}P exhibits much better morphology without cracks or detachment from the substrate. The oxide has an almost amorphous-like microstructure. The oxidation process shows typical diffusion-limited reaction at long anneals. Preliminary work on the oxidation of AlP indicates that the reaction leads to formation of Al{sub 2}O{sub ...

International Nuclear Information System (INIS)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, ...

International Nuclear Information System (INIS)

The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is reported from pure and ...

Energy Technology Data Exchange (ETDEWEB)

Frequency response measurements are used to determine the carrier lifetime of 1.3-..mu..m InGaAsP buried heterostructure lasers between 1 mA and threshold. The data confirm previous results on the radiative and Auger recombination coefficients and reveal the presence of a nonradiative current which dominates at low currents and contributes 4 mA at threshold.

International Nuclear Information System (INIS)

The crystal structure, lattice strain due to the antiferromagnetic ordering, and magnetic form factor in the itinerant 5f compounds UTGa_5 (T=Ni, Pd, Pt) have been studied by neutron scattering. High-resolution powder diffraction revealed that the tetragonality of the U-Ga layers increases down to the series of the transition metal element T. The integrated intensities of the antiferromagnetic reflections can be well explained with the Neel-type structure for UNiGa_5, whereas UPtGa_5 has the antiferromagnetic stacking of the ferromagnetically ordered uranium moments in the c plane. In both compounds the uranium moments orient along the c axis with moments of 0.75(5) and 0.32(5) #mu#_B for UNiGa_5 and UPtGa_5, respectively. No magnetic peak could be observed in the powder diffraction pattern of UPdGa_5 due to the small magnetic moment less than the experimental ...

Energy Technology Data Exchange (ETDEWEB)

The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.

International Nuclear Information System (INIS)

1 - Description: Format: MATXS. Number of groups: 80 neutron-, 24 photon-groups. 97 Nuclides: 1-H-1, 1-H-2, 2-He-3, 2-He-4, 3-Li-6, 3-Li-7, 4-Be-9, 5-B-10, 5-B-11, 6-C- nat., 7-N-14, 7-N-15, 8-O-16, 9-F-19, 11-Na-23, 12-Mg-nat., 13-Al-27, 14-Si-nat., 15-P-31, 17-Cl-nat., 18-Ar-40, 19-K-nat., 20-Ca-nat., 22-Ti-nat., 23-V-nat., 24-Cr-50, 24-Cr-52, 24-Cr-53, 24-Cr-54, 25-Mn-25, 26-Fe-54, 26-Fe-56, 26-Fe-57, 26-Fe-58, 27-Co-59, 28-Ni-58, 28-Ni-60, 28-Ni-61, 28-Ni-62, 28-Ni-64, 29-Cu-nat., 31-Ga-nat., 39-Y-89, 40-Zr-nat., 41-Nb-93, 42-Mo-nat., 47-Ag-107, 47-Ag-109, 48-Cd-nat., 50-Sn-nat., 63-Eu-151, 63-Eu-153, 64-Gd-152, 64-Gd-154, 64-Gd-155, 64-Gd-156, 64-Gd-157, 64-Gd-158, 64-Gd-160, 73-Ta-181, 74-W-182, 74-W-183, 74-W-184, 74-W-186, 75-Re-185, 75-Re-187, 79-Au-197, 82-Pb-nat., 83-Bi-209, 90-Th-232, 91-Pa-233, 92-U-232, 92-U-233, 92-U-234, 92-U-235, 92-U-236, 92-U-237, 92-U-238, 93-Np-237, 93-Np-238, 94-Pu-238, 94-Pu-239, 94-Pu-240, 94-Pu-241, ...

International Nuclear Information System (INIS)

The semiconducting compound CuGa_xIn_1_-_xSe_2 crystallizes in the chalcopyrite structure (space group Ianti 42d, Z=4). The X-ray powder data for x=1, 0.75, 0.6, 0.5, 0.4, 0.25 and 0.0 have been collected and it is found that the lattice parameters a and c and their ratio c/a vary linearly with x. Thus the composition of any chalcopyrite in the pseudo-binary system CuGaSe_2 and CuInSe_2 can be obtained from the accurate lattice parameters. The crystallite size determined from the (112) plane is minimum for x=0.50 (#propor to#1000 A) and away from x=0.50 it increases. A value of u=0.240 (5) has been established for fixing, the Se-atom positions in the CuGa_0_._5In_0_._5Se_2 solid solution. The JCPDS Diffraction File No. for CuInSe_2 is 40-1487 and for CuGa_0_._5In_0_._5Se_2 is 40-1488. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

British Library Electronic Table of Contents (United Kingdom)

The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...

International Nuclear Information System (INIS)

GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

International Nuclear Information System (INIS)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K_#alpha# X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K_#alpha# X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the ...

Energy Technology Data Exchange (ETDEWEB)

The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, ...

Energy Technology Data Exchange (ETDEWEB)

Room-temperature pulsed laser operation of (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P /(Al/sub 0.17/Ga/sub 0.83/)/sub 0.5/In/sub 0.5/P / (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved. The lasing wavelength is 626.2 nm, which is the shortest ever reported for an AlGaInP double heterostructure laser. Threshold current density is 50 kA/cm/sup 2/ for a diode with a 20-..mu..m-wide and 200-..mu..m-long stripe.

International Nuclear Information System (INIS)

In this study, SnO2 thin films have been grown using spray pyrolysis technique on glass substrates under a substrate temperature (Ts = 440 oC). The precursors were methanol CH4O and anhydrous tin tetrachloride. XRD analyses yielded strong (1 1 0)-(1 0 1)-(2 0 0) X-ray diffraction peaks which are characteristics to tetragonal crystals. Atomic Force Microscopy (AFM) analyses showed the existence of clusters with particular pyramidal shapes. The main part of this study concerns the optical measurements of transmittance T(?) and reflectance R(?) spectra inside 250-1800 nm domain. Conjoint optical and thermal properties were deduced using the Amlouk-Boubaker Opto-Thermal Expansivity ?AB. The obtained value: ?AB ? 23.4 m3 s-1 helped situating the performance of the as-grown SnO2 compound among most known PV-T oxides like ZnO and TiO2.

Energy Technology Data Exchange (ETDEWEB)

The temperature effect on corrosion behaviors of PbCaSnCe alloy in 4.5 M H{sub 2}SO{sub 4} solution was investigated by using potentiodynamic curve, electrochemical impedance spectra (EIS), Mott-Schottky plot and photocurrent response methods. It was found that PbCaSnCe alloy was in passive state in sulfuric acid solution, a passive film can be formed on alloy surface. The compositions of passive films formed at 0.9 V for 2 h under different temperatures were detected by X-ray photoelectron spectroscopy (XPS). The results showed that the film resistance and the transfer resistance decreased with the increment of the solution temperature. Mott-Schottky analysis and the photocurrent response revealed that the passive film exhibited n-type semi-conductive character, the donor density of the passive film decreased with increasing the solution temperature. Photocurrent response revealed that the photocurrent increased with increasing temperature. ...

Energy Technology Data Exchange (ETDEWEB)

Porous SnO{sub 2} nanotubes were prepared via electrospinning followed by calcination in air. As anode materials for lithium ion batteries, the porous nanotubes delivered a high discharge capacity of 807 mAh g{sup -1} after 50 cycles. Even after cycled at high rates, the electrode still retained a high fraction of its theoretical capacity. Such excellent performances of porous SnO{sub 2} nanotubes could be attributed to the porous and hollow structure which facilitated liquid electrolyte diffusion into the bulk materials and buffered large volume changes during lithium ions insertion/extraction. Furthermore, the nanoparticles of nanotubes provided the shorter diffusion length for lithium ions insertion which benefited in retaining the structural stability and good rate performance. Our results demonstrated that this simple method could be extended for the synthesis of porous metal oxide nanotubes with high performances in the applications of ...

International Nuclear Information System (INIS)

High quality Nb_3Sn films have been fabricated using a recently developed magnetron sputtering process capable of deposition rates approaching 1 #mu#m/min at sputtering voltages less than 500 V and power levels of about 5 KW. Low sputtering voltages allow more complete thermalization at lower pressures of the material condensing on the substrate which can improve long range order. Transition temperatures of up to 18.3"0K, J/sub c/(0)'s of 15 x 10"6 A/cm"2 and Hc_2 as high as 240 k0e have been achieved in 1-3 #mu#m films deposited from a Nb_3Sn reacted powder target with substrate temperatures between 600 and 800"0C. The films exhibit smooth surfaces and, generally, a (200) preferred orientation. The growth of the film is columnar in nature. The sputtering parameters, substrate material and temperature will be related to film structure, T/sub c/ and J/sub c/(H,T) and the Nb/Sn ratio as determined by Rutherford ...

Energy Technology Data Exchange (ETDEWEB)

This work reports studies of ethanol oxidation on Pt-Sn/C catalysts with nearly the same particle size and identical overall composition having different amounts of oxide and alloyed phases. Results of characterization of physical properties by transmission electron microscopy (TEM), X-ray diffraction (XRD), differential scanning calorimetry (DSC), X-ray photoelectron spectroscopy (XPS), and in situ dispersive X-ray absorption spectroscopy (DXAS) are presented. The variation in the amount of oxide and alloyed phases, promoted by heat treatments in mild temperature conditions, does not produce any significant particle growth. Cyclic voltammetry and oxidation of adsorbed CO in acid medium are used to probe the surface conditions. Data on the electrocatalytic activity towards ethanol oxidation, obtained by potential sweeps and chronoamperometry, are discussed and correlate well with the physical properties. This study, carried out in the absence of composition and ...

International Nuclear Information System (INIS)

Technical studies on constructing the J-PARC (Japan Proton Accelerator Research Complex) are presented by five authors: (1) on the wiring for electromagnets of the 50 GeV synchrotron, (2) on the fast beam-extraction from the 50 GeV synchrotron into two opposite directions, (3) on the target chamber system for the generation of muons, (4) on the design of large aperture electromagnets, and (5) on the maintenance and control of the electromagnet power supplies. (K.Y.)

International Nuclear Information System (INIS)

The Grueneisen parameter and lattice thermal expansion of the A-15 compounds V_3Si and V_3Ge at room temperature are evaluated on the basis of the method due to Brugger and Fritz from the third order elastic constants reported earlier. The calculated values are compared with available experimental values and are found to fit satisfactorily. (author).

Energy Technology Data Exchange (ETDEWEB)

A simple arrangement of standard horizontal coaxial Ge(Li) detectors with the aim of constructing a Compton linear-polarimeter was tested. High polarization sensitivity and detection efficiency were achieved. The characteristics of the polarimeter and analysis of the observed quantities in terms of the linear-polarization mixing coefficient Hsub(l)(LL') are described.

International Nuclear Information System (INIS)

Cross sections for elastic scattering of 12 GeV protons from "4"0Ca nuclei have been calculated using the flucton model. The influence of the collective flucton nucleon correlations on the calculated cross sections is examined. The calculated cross sections are in significant disagreement with the experimental data. This may be considered as an argument against the flucton model. (orig.).

International Nuclear Information System (INIS)

The K"+- and K"-meson cumulative production cross sections are measured at 119"0 in the laboratory system on nuclei Be, Al, Cu and Ta bombarded by 10 GeV protons. Spectra of the K"-mesons consisting of only sea quarks show universal features characteristic of the spectra of cumulative particles, which contain valence quarks. Evidence is obtained for the fact that the energy density in a flucton can exceed the mean nuclear density by an order of magnitude.

International Nuclear Information System (INIS)

A simple arrangement of standard horizontal coaxial Ge(Li) detectors with the aim of constructing a Compton linear-polarimeter was tested. High polarization sensitivity and detection efficiency were achieved. The characteristics of the polarimeter and analysis of the observed quantities in terms of the linear-polarization mixing coefficient Hsub(l)(LL') are described. (orig.).

Energy Technology Data Exchange (ETDEWEB)

The equilibria composition of the gaseous and the solid phase in the system GeO/sub 2//WO/sub 2/ is calculated with an improved thermodynamical program for temperatures 1100 < T < 1400 K and constant volume. By means of the results the experimental observed migration of GeO/sub 2/ in the presence of WO/sub 2/ in a temperature gradient T/sub 2/ ..-->.. T/sub 1/ (1200 ..-->.. 1100 K) in sealed evacuated silica tubes is due to a chemical transport with H/sub 2/ as the transporting agent. The H/sub 2/ is formed by H/sub 2/O which is desorbed by the quartz glass of the ampoules. The also observed volatility of WO/sub 2/ and its deposition in form of Ge/sub 0.75/W/sub 3/O/sub 9/ at the 'cold' end (T/sub 1/) of the tubes is performed by gaseous GeWO/sub 4/. The calculated and experimental transport rates are compared and discussed.

CERN Document Server

A search for the doubly charged Higgs boson, a member of $SU(2)_L$ scalar triplet $\\Phi$ participating in the seesaw mechanism of type II, in $pp$ collisions at $\\sqrt{s}=7$~TeV is presented. The data correspond to an integrated luminosity of 36 $\\text{pb}^{-1}$ collected by the CMS experiment at the LHC. The inclusive search is performed in events with three and four isolated charged leptons of all flavours originating from the decays of pair produced triplet components $\\Phi^{++}\\Phi^{--}$ and $\\Phi^{++}\\Phi^{-}.$ With the present collected luminosity the CMS experiment is sensitive to the $\\Phi$ mass range in which the possible decays $\\Phi^{++}\\to W^{+}W^{+}$ are forbidden kinematically. No signal excess is observed and lower limits at the 95\\% confidence level are set on the $\\Phi^{++}$ mass of 156\\GeV in the $\\mu\\mu$ channel, $154\\GeV$ in e$\\mu$ channel, of $144\\GeV$ in $ee$ channel and between ...