WorldWideScience
1

Densities and molar volumes of molten alkaline earth bromide - alkali bromide salt mixtures  

International Nuclear Information System (INIS)

The temperature and concentration dependence of the densities of binary CaBr_2-(Li, Na, K, Rb, Cs)Br, NaBr-(Sr, Ba)Br_2 and KBr-SrBr_2 mixtures have been measured using the method of hydrostatic weighing. With exception of the systems LiBr-CaBr_2 and NaBr-(Sr, Ba)Br_2 the calculated molar excess volumes are positiv in the investigated mixtures. (author).

1980-01-01

2

Selective enhancement of barium in the atmospheres of red giants  

Energy Technology Data Exchange (ETDEWEB)

High-resolution spectroscopy of 13 bright red giants and Ba stars shows selective enhancement of Ba in three of them, HD 65699 (Ba 2), ..cap alpha..TrA (K4 III), and epsilonPeg (K2 Ib). Infrared spectra available for HD 65699 show that Sr is enhanced, too. This selective enhancement is discussed in terms of a modified s-process which converts some of the pre-existing r- and s-process matter into the magic nuclei /sup 88/Sr and /sup 138/Ba.

1984-03-01

3

Upgrading low molecular weight hydrocarbons  

Energy Technology Data Exchange (ETDEWEB)

This patent describes a process for the conversion of low molecular weight alkanes to higher molecular weight hydrocarbons. It comprises: contacting the low molecular weight alkanes, at an elevated temperature, with oxygen and a catalyst of the formula Zn{sub a}A{sub b}M{sub c}M'{sub d}O{sub x} wherein A is Li, Na, K, or mixtures thereof; M is Al, Ga, Cr, La, Y, Sc, V, Nb, Ta, Cu or mixtures thereof; M' is Cs, Rb, Mg, Ca, Sr, Ba, Sm, Pb, Mn, Sb, P, Sn, Bi, Ti, Zr, Hf, or mixtures thereof; a if from about 1 to about 20; b is from about 0.1 to about 20; c is from about 0 to about 5 d is from about 0 to about 20, and x is a number needed to fulfill the valence requirements of the other elements; provided that at least one c and d is a t least 0.1; and when M' is Sn, c must be at least 0.1.

1989-12-12

4

Ternary oxide nanostructures and methods of making same  

Energy Technology Data Exchange (ETDEWEB)

A single crystalline ternary nanostructure having the formula A.sub.xB.sub.yO.sub.z, wherein x ranges from 0.25 to 24, and y ranges from 1.5 to 40, and wherein A and B are independently selected from the group consisting of Ag, Al, As, Au, B, Ba, Br, Ca, Cd, Ce, Cl, Cm, Co, Cr, Cs, Cu, Dy, Er, Eu, F, Fe, Ga, Gd, Ge, Hf, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Tc, Te, Ti, Tl, Tm, U, V, W, Y, Yb, and Zn, wherein the nanostructure is at least 95% free of defects and/or dislocations.

2009-09-08

5

Effect of Sr substitution on photoluminescent properties of BaAl2O4:Eu2+, Dy3+  

British Library Electronic Table of Contents (United Kingdom)

Phosphor material BaAl2O4:Eu2+, Dy3+ with varying compositions of Sr substitution were prepared by the solid-state synthesis method. The phosphor compositions were characterized for their phase and crystallinity by XRD, SEM and TEM. Photoluminescence (PL) properties were investigated measuring PL and decay time for varying Ba/Sr compositions. The PL results show the blue shift in the luminescence properties in Sr substituted BaAl2O4:Eu2+, Dy3+ compared to parent BaAl2O4:Eu2+, Dy3+. It is probably due to the influence of 5d electron states of Eu2+ in the crystal field because of atomic size variation causing crystal defects. Dy3+ ion doping in the phosphor generates deep traps, which results in long afterglow phosphorescence.

2008-01-01

7

The McGurk phenomenon in Italian listeners  

UK PubMed Central (United Kingdom)

SummaryIn the classic example of the McGurk effect, when subjects see a speaker say /ga/ and hear a simultaneous /ba/, they typically perceive /da/, a syllable that was not presented...Full Text Available

2009-08-01

8

Polythermal study of the M(ClO_4)_2-H_2O systems, where M"2 = Mg"2"+, Ca"2"+, Sr"2"+, Ba"2"+  

International Nuclear Information System (INIS)

Crystallization points of aqueous solution of the systems M(ClO_4)_2-H_2O (M"2 = Mg"2"+, Ca"2"+, Sr"2"+, Ba"2"+), depending on the salt concentration, were identified by visual-polythermal method. Relying on model notions on the structure of the electrolyte solutions, specific features of strontium perchlorate solubility polytherm and concentration dependence of the relative dynamic viscosity of the salt aqueous solutions are discussed

2005-03-01

9

Relations between structural and superconducting properties of bulk and thin film high-T_c materials  

International Nuclear Information System (INIS)

The structural ordering of oxygen deficient and Co-doped YBCO (YBa_2Cu_3_-_yCo_yO_6_+_x) have been studied experimentally, and by computer simulations of the oxygen ordering in the basal plane of the structure. The calculations are based on the two-dimensional ASYNNNI model and its modifications. Good agreement is established between the ASYNNNI calculations and the experimentally observed structural properties of the double cell ortho-II structure and the oxygen disordering process from Co-doping into the basal plane. A model that relates the superconducting transition temperature T_c(x) of undoped YBCO and T_c(y) of Co-doped YBCO to the formation of specific domains of the two orthorhombic ordered oxygen phases, ortho-I and ortho-II, shows a close agreement with experimental T_c(x) and T_c(y) data of samples prepared under equilibrium conditions. The structural changes as a result of metal ion substitutions and oxidation/reduction processes have been studied by neutron powder ...

1984-02-13

10

Focused ion beam processes for high-T/sub c/ superconductors  

International Nuclear Information System (INIS)

Focused ion beam (FIB) processes have been developed for Y--Ba--Cu--O superconductor films. A Y--Cu liquid metal ion source has been fabricated, using a Y_6_7 --Cu_3_3 eutectic alloy as the ion source. As-sputtered Y--Ba--Cu--O film etch rate ratios to GaAs(100) and Si(100) substrates are 0.28 and 1.4 for 130-keV Au"+ FIB ion etching, respectively. Y--Ba--Cu--O submicron patterns have been demonstrated by using FIB lithography and Cl_2 reactive ion beam etching. Moreover, a Y--Ba--Cu--O superconducting line with 4-#mu#m linewidth has been fabricated by annealing an as-sputtered Y--Ba--Cu--O line pattern. T/sub c/ control of Y--Ba--Cu--O film has been achieved by 200-keV Ne"+, using conventional ion implantation and 300 keV Si"+"+ FIB ion implantation.

11

Influence of crystallization on the spectral features of nano-sized ferroelectric barium strontium titanate (Ba0.7Sr0.3Tio3) thin films  

British Library Electronic Table of Contents (United Kingdom)

Ferroelectric barium strontium titanate (Ba0.7Sr0.3TiO3)(BST) thin films have been prepared from barium 2-ethylhexanoate [Ba[CH3(CH2)3CH(C2H5)CO2]2], strontium 2-ethylhexanoate [Sr[CH3(CH2)3CH(C2H5)CO2]2] and titanium(IV) isopropoxide [TiOCH(CH3)2]4 precursors using a modified sol-gel technique. The precursor except [TiOCH(CH3)2]4 were synthesized in the laboratory. Transparent and crack-free films were fabricated on pre-cleaned quartz substrates by spin coating. The structural and optical properties of films annealed at different temperatures have been investigated. The as-fired films were found to be amorphous that crystallized to the tetragonal phase after annealing at 550degreeC for 1h in air. The lattice constants "a" and "c" were found to be 3.974A and 3.990A, respectively. The grain...

2008-01-01

12

ZZ MCB-JEF2.2, MCB Continuous-Energy Neutron Cross Section Libraries for Temperatures from 300 to 1800 K  

International Nuclear Information System (INIS)

1 - Description of program or function: MCB-JEF2.2 is a continuous-energy cross section libraries in ACE Format suitable for the MCB-1C and MCNP codes. Libraries for various materials were generated at six different Temperatures, and cover the energy range up to 20 MeV. Format: ACE. Number of groups: Continuous energy. Nuclides: H-1, H-2, H-3, He-3, He-4, Li-6, Li-7, Be-9, B-10, B-11, C-nat., N-14, N-15, O-16, O-17, Na-23, F-19, Mg-nat., Al-27, Si-nat., P-31, S-32, S-33, S-34, S-36, Cl-nat, K-nat, Ca-nat., Ti-nat, V-nat, Cr-50, Cr-52, Cr-53, Cr-54, Mn-55, Fe-54, Fe-56, Fe-57, Fe-58, Co-59, Ni-58, Ni-59, Ni-60, Ni-61, Ni-62, Ni-64, Cu-nat, Ga-nat, Ge-72, Ge-73, Ge-74, Ge-76, As-75, Se-74, Se-76, Se-77, Se-78, Se-80, Se-82, Br-79, Br-81, Kr-78, Kr-80, Kr-82, Kr-83, Kr-84, Kr-85, Kr-86, Rb-85, Rb-86, Rb-87, Sr-84, Sr-86, Sr-87, Sr-88, Sr-89, ...

13

Isolation and determination of "9"0Sr, "2"2"6Ra, "2"2"8Ra and "2"1"0Pb in food  

International Nuclear Information System (INIS)

A procedure is described for the isolation and determination of "9"0Sr, "2"2"6Ra, "2"2"8Ra and "2"1"0Pb in food. These nuclides are highly radiotoxic, above all for babies and children. Samples are dry ashed, alkali metals are removed as carbonates. Separation from other matrix ions and separation of Ra, Sr and Pb can be achieved with a column of Sr-Spec, an immobilized crown ether. For activity measurements membrane filters with SrSO_4, Ba(Ra)SO_4 and PbS are prepared. Ra is determined by gamma-spectrometry, "9"0Sr and "2"1"0Pb are determined by low-level-betacounting. The determination limits are 10 mBq/kg for "9"0Sr and "2"1"0Pb and 50 mBq/kg for "2"2"6Ra and "2"2"8Ra. The procedure is useful for all kinds of foodstuff. (orig.).

14

Mercury and other trace elements in a pelagic Arctic marine food web (Northwater Polynya, Baffin Bay)  

Energy Technology Data Exchange (ETDEWEB)

Total mercury (THg), methylmercury (MeHg) and 22 other trace elements were measured in ice algae, three species of zooplankton, mixed zooplankton samples, Arctic cod (Boreogadus saida), ringed seals (Phoca hispida) and eight species of seabirds to examine the trophodynamics of these metals in an Arctic marine food web. All samples were collected in 1998 in the Northwater Polynya (NOW) located between Ellesmere Island and Greenland in Baffin Bay. THg and MeHg were found to biomagnify through the NOW food web, based on significant positive relationships between log THg and log MeHg concentrations vs. {delta} {sup 15}N muscle and liver . The slope of these relationships for muscle THg and MeHg concentrations (slope = 0.197 and 0.223, respectively) were similar to those reported for other aquatic food webs. The food web behavior of THg and {delta} {sup 15}N appears constant, regardless of trophic state (eutrophic vs. oligotrophic), latitude (Arctic vs. tropical) or salinity (marine vs. ...

2005-12-01

15

Mercury and other trace elements in a pelagic Arctic marine food web (Northwater Polynya, Baffin Bay)  

International Nuclear Information System (INIS)

Total mercury (THg), methylmercury (MeHg) and 22 other trace elements were measured in ice algae, three species of zooplankton, mixed zooplankton samples, Arctic cod (Boreogadus saida), ringed seals (Phoca hispida) and eight species of seabirds to examine the trophodynamics of these metals in an Arctic marine food web. All samples were collected in 1998 in the Northwater Polynya (NOW) located between Ellesmere Island and Greenland in Baffin Bay. THg and MeHg were found to biomagnify through the NOW food web, based on significant positive relationships between log THg and log MeHg concentrations vs. #delta# "1"5N muscle and liver . The slope of these relationships for muscle THg and MeHg concentrations (slope = 0.197 and 0.223, respectively) were similar to those reported for other aquatic food webs. The food web behavior of THg and #delta# "1"5N appears constant, regardless of trophic state (eutrophic vs. oligotrophic), latitude (Arctic vs. tropical) or salinity (marine vs. freshwater) ...

2005-12-01

16

K and L x-ray production cross sections excited by 14.00--34.16 MeV #alpha#-particle beams  

International Nuclear Information System (INIS)

K and L-shell x-ray production cross sections were measured using #alpha#-particle beams of 14.00 to 34.16 MeV. The K-shell measurements ranged from Z = 20 to Z = 50 and included Ca, Sc, Ti, V, Fe, Ni, Cu, Zn, Ga, Br, Rb, Sr, Y, Mo, Ag, In, and Sn while the L-shell measurements ranged from Z = 55 to Z = 92 and included Cs, Ba, Ce, Gd, Tm, Lu, Au, Pb, Th, and U. Thin metallic foils were used for the measurements and corrections for self-attenuation were negligible. A liquid nitrogen cooled Si(Li) detector and associated pulsed optical electronics were used in detecting x-rays. Absolute cross sections with an uncertainty of +-10 percent are presented for the elements measured. Also smoothed cross sections are presented which were generated by a three term polynomial fit of the experimental data points. By use of available fluorescence yields the K-shell data were converted to ionization cross sections and compared to various ...

17

The r-process in the early Galaxy  

CERN Document Server

We report Sr, Pd and Ag abundances for a sample of metal-poor field giants and analyze a larger sample of Y, Zr, and Ba abundances. The [Y/Zr] and [Pd/Ag] abundance ratios are similar to those measured for the r-process-rich stars CS 22892-052 and CS 31082-001. The [Pd/Ag] ratio is larger than predicted from the solar-system r-process abundances. The constant[Y/Zr] and [Sr/Y] values in the field stars places strong limits on the contributions of the weak s-process and the main s-process to the light neutron-capture elements. Stars in the globular cluster M 15 possess lower [Y/Zr] values than the field stars. There is a large dispersion in [Y/Ba]. Because the r-process is responsible for the production of the heavy elements in the early Galaxy, these dispersions require varying light-to-heavy ratios in r-process yields.

2002-01-01

18

Practical superconductor development for electrical power applications  

Energy Technology Data Exchange (ETDEWEB)

Development of useful high-critical-temperature (high-{Tc}) superconductors requires synthesis of superconducting compounds; fabrication of wires, tapes, and films from these compounds; production of composite structures that incorporate stabilizers or insulators; and design and testing of efficient components. This report describes technical progress of research and development efforts aimed at producing superconducting components based on the Y-Ba-Cu, Bi-Sr-Ca-Cu, Bi-Pb-Sr-Ca-Cu, and Tl-Ba-Ca-Cu oxides systems. Topics discussed are synthesis and heat treatment of high-{Tc} superconductors, formation of monolithic and composite wires and tapes, superconductor/metal connectors, characterization of structures and superconducting and mechanical properties, and fabrication and properties of thin films. Collaborations with industry and academia are also documented. 10 figs.

1991-10-01

19

New NZP-phosphates B{sub 0.5}FeTa(PO{sub 4}){sub 3} (where B - Ca, Sr, Ba)  

Energy Technology Data Exchange (ETDEWEB)

New phosphates with NaZr{sub 2}(PO{sub 4}){sub 3} structure of the B{sub 0.5}FeTa(PO{sub 4}){sub 3}-type (where B-Ca, Sr, Ba) are synthesized and characterized by X-ray diffraction analysis and IR-spectroscopy. The heating behavior of the phosphates is studied using high-temperature X-ray crystallography in the range 15-625 deg. C. The unit-cell parameters, the coefficients of thermal expansion {alpha}{sub a}, {alpha}{sub c} and their thermal expansion anisotropy |{alpha}{sub c} - {alpha}{sub a}| of the phosphates under study are determined and the dependences of these characteristics on the nature of cations are established and analyzed.

2009-05-05

20

Calculation of the hyperfine constants of the V sub (K) center in CaF_2, SrF_2 e BaF_2  

International Nuclear Information System (INIS)

The magnetic hyperfine constants of the V sub(K) center in CaF_2, SrF_2 and BaF_2 have been calculated, assuming a phenomenological model, based on the F"-_2 'central molecule', to describe the wave function of the defect. The introduction of covalence with the ions neighboring the 'central molecule', has shown that this is a better description for the defect than a simple 'central molecule' model. It was also shown that the results for the hyperfine constants are strongly dependent on the relaxations of these neighboring ions, which have been determined by fitting the experimental data. The present results are compared with other previous calculations where similar and different methods have been used. A better description for the wave function of the defect is suggested. (author).

2004-06-02

21

Isolation and determination of {sup 90}Sr, {sup 226}Ra, {sup 228}Ra and {sup 210}Pb in food; Abtrennung und Bestimmung von {sup 90}Sr, {sup 226}Ra, {sup 228}Ra und {sup 210}Pb in Lebensmitteln mittels eines Strontium-spezifischen Extraktionsharzes  

Energy Technology Data Exchange (ETDEWEB)

A procedure is described for the isolation and determination of {sup 90}Sr, {sup 226}Ra, {sup 228}Ra and {sup 210}Pb in food. These nuclides are highly radiotoxic, above all for babies and children. Samples are dry ashed, alkali metals are removed as carbonates. Separation from other matrix ions and separation of Ra, Sr and Pb can be achieved with a column of Sr-Spec, an immobilized crown ether. For activity measurements membrane filters with SrSO{sub 4}, Ba(Ra)SO{sub 4} and PbS are prepared. Ra is determined by gamma-spectrometry, {sup 90}Sr and {sup 210}Pb are determined by low-level-betacounting. The determination limits are 10 mBq/kg for {sup 90}Sr and {sup 210}Pb and 50 mBq/kg for {sup 226}Ra and {sup 228}Ra. The procedure is useful for all kinds of foodstuff. (orig.) [Deutsch] Es wird ein Analysengang zur Abtrennung und Bestimmung von ...

1996-12-31

22

Molar extinction coefficients in aqueous solutions of some alkaline earth chlorides  

International Nuclear Information System (INIS)

Molar extinction coefficients for the solid solutes in aqueous solutions of some alkaline earth chlorides such as MgCl_2.6H_2O, CaCl_2, SrCl_2.6H_2O and BaCl_2.2H_2O have been determined at 81, 356, 511, 662, 1173 and 1332 keV energies in different concentration using the narrow beam transmission methods. (author)

1999-12-21

23

Positron annihilation in high-T/sub c/ superconductors  

International Nuclear Information System (INIS)

We report ab initio calculations of positron wave functions in the high-T/sub c/ superconductors YBa_2Cu_3O_7, Bi_2Sr_2CaCu_2O_8, and Tl_2Ba_2CaCu_2O_8 using the general potential linearized augmented plane-wave method. The calculated positron wave functions are fairly insensitive to whether or not electron-positron correlation is included in the calculation for YBa_2Cu_3O_7 and Tl_2Ba_2CaCu_2O_8, but the calculated positron density is quite sensitive to correlation in Bi_2Sr_2CaCu_2O_8. While the positron wave function samples primarily the chain region in YBa_2Cu_3O_7, the results indicate that positrons should be good probes of the Cu-O layer-derived electronic states near the Fermi energy in Tl_2Ba_2CaCu_2O_8 since a large overlap with these states is predicted.

24

High tunability of pulsed laser deposited Ba0.7Sr0.3TiO3 thin films on perovskite oxide electrode  

British Library Electronic Table of Contents (United Kingdom)

Ferroelectric thin films such as BST, PZT and PLZT are extensively being studied for the fabrication of DRAMS since they have high dielectric constant. The large and reversible remnant polarization of these materials makes it attractive for nonvolatile ferroelectric RAM application. In this paper we report the characterization of Ba0.7Sr0.3TiO3 (BST) thin films grown by pulsed laser ablation on oxide electrodes. The structural and electrical properties of the fabricated devices were studied. Growth of crystalline BST films was observed on La0.5Sr0.5CoO3 (LSCO) thin film electrodes at relatively low substrate temperature compared to BST grown on PtSi substrates. Electrical characterization was carried out by fabricating PtSi/LSCO/BST/LSCO heterostructures. The leakage current of the heteros...

2011-01-01

25

ZZ DECAYREM/C, Decay Spectra Library for EXREM Calculation  

International Nuclear Information System (INIS)

Description of problem or function: Format: EXREM III; Nuclides: radioactive decay data on 252 Nuclides: 1H-3, 4Be-7, 6C-11, 6C-14, 7N-13, 8O-15, 9F-18, 11Na-22, 11Na-24, 12Mg-28, 13Al-28, 15P-32, 15P-33, 16S-35, 17Cl-36, 17Cl-38, 18A-37, 18A-39, 19K-40, 19K-42, 19K-43, 20Ca-45, 20Ca-47, 20Ca-49, 21Sc-46, 21Sc-47, 21Sc-49, 24Cr-51, 25Mn-52M, 25Mn-52, 25Mn-54, 26Fe-52, 26Fe-55, 26Fe-59, 27Co-56, 27Co-57, 27Co-58, 27Co-60, 28Ni-56, 28Ni-63, 29Cu-64, 30Zn-65, 30Zn-69M, 30Zn-69, 31Ga-67, 31Ga-68, 32Ge-77, 33As-76, 33As-77, 34Se-75, 35Br-80M, 35Br-80, 35Br-82, 35Br-83, 35Br-84, 36Kr-79, 36Kr-83M, 36Kr-85M, 36Kr-85, 36Kr-87, 36Kr-88, 37Rb-84, 37Rb-86, 37Rb-87, 37Rb-88, 37Rb-89, 37Rb-90M, 37Rb-90, 38Sr-85, 38Sr-87M, 38Sr-89, 38Sr-90, 38Sr-91, 38Sr-92, 38Sr-93, 39Y-87, 39Y-88, 39Y-90, 39Y-91M, 39Y-91, ...

26

Processing of La/sub 1. 8/Sr/sub 0. 2/CuO/sub 4/ and YBa/sub 2/Cu/sub 3/O/sub 7/ superconducting thin films by dual-ion-beam sputtering  

Science.gov (United States)

High quality La/sub 1.8/Sr/sub 0.2/CuO/sub 4/ and YBa/sub 2/Cu/sub 3/O/sub 7/ superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 ..mu..m thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF/sub 2/, Si, CaF/sub 2/, ZrO/sub 2/-9% Y/sub 2/O/sub 3/, BaF/sub 2/, Al/sub 2/O/sub 3/, and SrTiO/sub 3/. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa/sub ...

1988-03-15

27

SSRM characterisation of FIB induced damage in silicon  

International Nuclear Information System (INIS)

Scanning spreading resistance microscopy (SSRM) has been applied to study focused ion beam (FIB) induced damage in silicon in dependence on ion irradiation doses from 10"1"2 cm"-"2 to 2#centre dot#10"1"6 cm"-"2. Starting from the lowest dose, SSRM detects increasing spreading resistance (SR) with increasing dose. For doses from 2#centre dot#10"1"3 cm"-"2 to 4#centre dot#10"1"4 cm"-"2, a slight decrease of SR is measured whereas for higher doses SR again slightly increases. The results are explained by physical effects like decreased carrier mobility due to increased scattering, amorphisation of silicon and precipitation of implanted Ga ions. The results clearly prove that SSRM is well suited for the fast detection of ion beam induced damage with high lateral resolution.

2008-03-01

28

Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO_2 on SiO_2/Si  

International Nuclear Information System (INIS)

Highly conductive biaxially textured RuO_2 thin films were deposited on technically important SiO_2/Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO_2 on SiO_2/Si. The biaxially oriented RuO_2 had a room-temperature resistivity of 37 #mu##OMEGA#-cm and residual resistivity ratio above 2. We then deposited Ba_0_._5Sr_0_._5TiO_3 thin films on RuO_2/IBAD-YSZ/SiO_2/Si. The Ba_0_._5Sr_0_._5TiO_3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz. copyright 1998 Materials Research Society.

1998-09-01

29

Influence of Ce0.9Gd0.1O2-d particles on microstructure and oxygen permeability of Ba0.5Sr0.5Co0.8Fe0.2O3-d composite membrane  

British Library Electronic Table of Contents (United Kingdom)

This study examined the oxygen permeation behavior of Ce0.9Gd0.1O2-d (Gadolinium-Doped Ceria, GDC)/Ba0.5Sr0.5Co0.8Fe0.2O3-d (BSCF) composite membranes fabricated using a conventional sintering technique. GDC/BSCF composite membranes with a relative density >95% could be obtained when a green compact of BSCF and GDC was sintered at 1150^oC for 5h. It appears that GDC serves as a grain growth inhibitor because the average grain size of the composite decreased with increasing GDC content. The oxygen permeability of the BSCF and GDC/BSCF composite membranes strongly depends on the grain size and membrane thickness. The addition of GDC to BSCF resulted in a small grain size, low thermal expansion coefficient and high hardness. However, it is believed that oxygen permeation was blocked by GDC, a...

2010-01-01

30

Complex permittivity and complex permeability of Sr ions substituted Ba ferrite at X-band  

International Nuclear Information System (INIS)

M-type hexagonal ferrite composition, Ba(1-x)SrxFe12O19 (x=0.0, 0.2, 0.4, 0.6, 0.8 and 1.0), was prepared by a two route ceramic method. Complex permittivity (?'-j?'') and complex permeability (?'-j?'') have been measured using a network analyzer from 8.2 to 12.4 GHz X-ray diffraction confirmed the M-type hexagonal structure and a scanned electron micrograph was used to analyze the grain size distribution of ferrite. Substitution of Sr2+ ions causes an increase in porosity that deteriorates the electromagnetic and microstructural properties in the doped samples. Both dielectric constant and dielectric loss are enhanced in comparison to the permeability and magnetic loss over the entire frequency region. This is due to a resistivity variation and the formation of Fe2+ ions, which increases the hopping mechanism between Fe2+ and Fe3+ ions.

2008-05-01

31

Dielectric behavior of Ba{sub 0.95}Sr{sub 0.05}TiO{sub 3} ceramics sintered by microwave  

Energy Technology Data Exchange (ETDEWEB)

Here we report detailed dielectric studies carried out on a Barium strontium titanate (BST) (95:5) composition. The material was synthesized by conventional ceramic method and microwave processing, and the later technique resulted in material with high density, improved microstructure and dielectric properties. The dielectric properties were studied as a function of frequency and temperature and well-defined ferroelectric behavior of first order transition was observed. It follows Curie-Weiss law above transition temperature (paraelectric region). Curie temperature is slightly higher for microwave sintered (MS) material.

2002-12-01

32

Layered GdBa_0_._5Sr_0_._5Co_2O_5_+_#delta# as a cathode for proton-conducting solid oxide fuel cells with stable BaCe_0_._5Zr_0_._3Y_0_._1_6Zn_0_._0_4O_3_-_#delta# electrolyte  

International Nuclear Information System (INIS)

The layered GdBa_0_._5Sr_0_._5Co_2O_5_+_#delta# (GBSC) perovskite oxides are synthesized by modified Pechini method and investigated as a novel cathode material for solid oxide fuel cells (SOFCs) based on a stable perovskite oxide BaCe_0_._5Zr_0_._3Y_0_._1_6Zn_0_._0_4O_3_-_#delta# (BCZYZ) as electrolyte. The fabricated single cells of NiO-BCZYZ/BCZYZ (#approx#20 #mu#m)/GBSC (#approx#20 #mu#m) were operated from 550 to 700 "oC with humidified hydrogen (#approx#5% H_2O) as fuel. The BCZYZ perovskite electrolyte was completely dense after sintered at 1250 "oC for 5 h, lower than that without zinc dopant about 150 "oC. An open circuit voltage of 1.009 V and a maximal power density of 0.35 W cm"-"2 were achieved at 700 "oC. The interfacial polarization resistance was as low as 1.46, 0.45, 0.25 and 0.15 #OMEGA# cm"2 at 550, 600, 650 and 700 "oC, respectively. The ratio of polarization resistance to total cell resistance decreased ...

2010-04-30

33

Determination of constituent elements in some Nigerian medicinal plants by thermal-neutron activation analysis  

Energy Technology Data Exchange (ETDEWEB)

This study of the inorganic chemical composition of 10 different Nigerian medicinal plant species, using the technique of instrumental neutron activation analysis (INAA), resulted in the determination of the concentrations of 18 major, minor, and trace elements: Al, Ba, Br, Ca, Cl, Eu, Fe, Ga, K, La, Mn, Na, Sb, Sc, Si, Sm, V, and Zn. The parts of the plants used were roots, leaves, and bark. The NBS SRM 1571 Orchard Leaves was also analyzed to assess the accuracy of the procedures used. 21 refs., 4 tables.

1984-04-02

34

PbZrO sub 3 -doped (Ba,Sr)TiO sub 3 -based dielectrics for high-voltage capacitor applications  

Energy Technology Data Exchange (ETDEWEB)

This paper reports that high-dielectric ceramics with the composition (94.7% {minus} x) (Ba,Sr)TiO{sub 3} + PbZrO{sub 3} + 5Bi{sub 2}Ti{sub 3}O{sub 9} + 0.3MnO{sub 2}, where the ration (Ba)/(Sr) = 1.25 and x {le} 15 mol%, have been developed for high-voltage capacitors. The dielectric constant of the ceramics is in the range 1200 to 1900 at room temperature, and the room-temperature dielectric loss, tan{delta}, is less than 0.3%, except when 15 mol% PbZrO{sub 3} is added with sintering at 1180{degrees}C to 1240{degrees}C for 2 h. Ceramics with more than 8 mol% zirconate show the Y5S characteristic of capacitance, and those with less than 8 mol% additive exhibit the Z5S characteristic. The dielectric constant gradually increases with increment in the ac signal voltage at 60 Hz, but decreases beyond a threshold value that varies with zirconate content and sintering conditions. The variation of the dielectric constant at 2 kVrms/mm (with respect ...

1991-11-01

35

Origin of salinity in produced waters from the Palm Valley gas field, Northern Territory, Australia  

Energy Technology Data Exchange (ETDEWEB)

The chemical composition and evolution of produced waters associated with gas production in the Palm Valley gas field, Northern Territory, has important implications for issues such as gas reserve calculations, reservoir management and saline water disposal. The occurrence of saline formation water in the Palm Valley field has been the subject of considerable debate. There were no occurrences of mobile water early in the development of the field and only after gas production had reduced the reservoir pressure, was saline formation water produced. Initially this was in small quantities but has increased dramatically with time, particularly after the initiation of compression in November 1996. The produced waters range from highly saline (up to 300,000 mg/L TDS), with unusual enrichments in Ca, Ba and Sr, to low salinity fluids that may represent condensate waters. The Sr isotopic compositions of the waters ({sup ...

2005-04-01

36

Origin of salinity in produced waters from the Palm Valley gas field, Northern Territory, Australia  

International Nuclear Information System (INIS)

The chemical composition and evolution of produced waters associated with gas production in the Palm Valley gas field, Northern Territory, has important implications for issues such as gas reserve calculations, reservoir management and saline water disposal. The occurrence of saline formation water in the Palm Valley field has been the subject of considerable debate. There were no occurrences of mobile water early in the development of the field and only after gas production had reduced the reservoir pressure, was saline formation water produced. Initially this was in small quantities but has increased dramatically with time, particularly after the initiation of compression in November 1996. The produced waters range from highly saline (up to 300,000 mg/L TDS), with unusual enrichments in Ca, Ba and Sr, to low salinity fluids that may represent condensate waters. The Sr isotopic compositions of the waters ...

2005-04-01

37

GdBa_0_._5Sr_0_._5Co_2O_5_+_#delta# layered perovskite as promising cathode for proton conducting solid oxide fuel cells  

International Nuclear Information System (INIS)

BaZr_0_._1Ce_0_._7Y_0_._2O_3_-_#delta# (BZCY7) exhibits adequate proton conductivity as well as sufficient chemical and thermal stability over a wide range of SOFC operating conditions, while layered GdBa_0_._5Sr_0_._5Co_2O_5_+_#delta# (GBSC) perovskite deposited on a doped ceria electrolyte demonstrates advanced electrochemical properties. This research fully takes advantage of these advanced properties and develops novel protonic ceramic membrane fuel cells (PCMFCs) of Ni-BZCY7|BZCY7|GBSC. The results show that the open-circuit potential of 1.003 V, maximum power density of 430 mW cm"-"2, and a low polarization resistance of the electrodes of 0.08 #OMEGA# cm"2 are achieved at 700 "oC. With temperature increases, the total cell resistance decreases, among which electrolyte resistance becomes increasingly dominant over polarization resistance. The results also indicate that GBSC perovskite cathode is a good candidate for ...

2010-04-30

38

Luminescent properties of Eu3+-activated Sr3B2SiO8: A red-emitting phosphor for white light-emitting diodes  

International Nuclear Information System (INIS)

Single-phased Sr3B2SiO8:Eu3+ phosphor was prepared by a solid-state method at 1020 oC. The luminescence spectra showed that Sr3B2SiO8:Eu3+ phosphor can be effectively excited by near ultraviolet light (393 nm) and blue light (464 nm). When excited at 393 or 464 nm Sr3B2SiO8:Eu3+ exhibited the main emission peaks at 611 and 620 nm, which resulted from the supersensitive 5D0#->#7F2 transition of Eu3+. The luminescence intensity of Sr3B2SiO8:Eu3+ at 611 and 620 nm reached the maximum when the doping content of Eu3+ was 4.5 mol%. Its chromaticity coordinates (0.646, 0.354) were very close to the NTSC standard values (0.67, 0.33). Thus, Sr3B2SiO8:Eu3+ is considered to be an efficient red-emitting phosphor for long-UV InGaN-based light-emitting diodes. - Highlights: ? Sr3B2SiO8:Eu3+ was synthesized using solid-state reaction method for the ...

2011-07-01

39

Formation of Cu2O Quantum Dots on SrTiO3 (100): Self-Assembly and Directed Self-Assembly  

Energy Technology Data Exchange (ETDEWEB)

Nanoscale islands of Cu2O have been synthesized on single-crystal SrTiO3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (OPA-MBE). Island growth location has been controlled by using an ex-situ Ga+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. Analysis of Cu2O dot growth on unmodified substrate regions revealed an evolution of dot size and array density. Atomic force microscopy studies show that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of islands. Islands initially formed in the FIB-generated surface topography and filled those features before nucleating on neighboring unmodified surface regions.

2006-11-09

40

Focused-ion-beam directed self-assembly of Cu_2O islands on SrTiO_3(100)  

International Nuclear Information System (INIS)

Nanoscale islands of Cu_2O have been synthesized on single-crystal SrTiO_3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (MBE). Island growth location has been controlled by using an ex situ Ga"+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex situ atomic force microscopy study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.

2004-06-21

41

Focused-Ion-Beam Directed Self-Assembly of Cu?O Islands on SrTiO3(100)  

Energy Technology Data Exchange (ETDEWEB)

Nanoscale islands of Cu?O have been synthesized on single crystal SrTiO? (100) substrates using oxygen plasma assisted molecular beam epitaxy (MBE). Island growth location has been controlled by using an ex-situ Ga? focused ion beam (FIB) to modify the growth surface in discrete locations prior to island sythesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex-situ AFM study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.

2004-06-21

42

Measurement of relative K X-ray intensity ratio following radioactive decay and photoionization  

Energy Technology Data Exchange (ETDEWEB)

The measurements of the K X-ray intensity ratio I(K{alpha} {sub 2}/K{alpha} {sub 1}), I(K{beta} {sub 1}/K{alpha} {sub 1}) and I(K{beta}/K{alpha}) for elements V, Mn, Zn, Tc, Ru, Cd, Xe, Ba, Cs, Hg and Rn were experimentally determined both by photon excitation, in which 59.5 keV {gamma}-rays from a {sup 241}Am and 123.6 keV {gamma}-rays from a {sup 60}Co were used, and following the radioactive decay of {sup 51}Cr, {sup 55}Fe, {sup 67}Ga, {sup 99}Tc, {sup 111}In, {sup 131}I, {sup 133}Ba, {sup 133}Xe, {sup 137}Cs, {sup 201}Tl and {sup 226}Ra. K X-rays emitted by samples were counted by a Si(Li) detector with resolution 160 eV at 5.9 keV. Obtained values were compared with the theoretical values. It was observed that present values agree with the previous theoretical and other experimental results.

2007-01-15

43

Measurement of relative K X-ray intensity ratio following radioactive decay and photoionization  

International Nuclear Information System (INIS)

The measurements of the K X-ray intensity ratio I(K#alpha# _2/K#alpha# _1), I(K#beta# _1/K#alpha# _1) and I(K#beta#/K#alpha#) for elements V, Mn, Zn, Tc, Ru, Cd, Xe, Ba, Cs, Hg and Rn were experimentally determined both by photon excitation, in which 59.5 keV #gamma#-rays from a "2"4"1Am and 123.6 keV #gamma#-rays from a "6"0Co were used, and following the radioactive decay of "5"1Cr, "5"5Fe, "6"7Ga, "9"9Tc, "1"1"1In, "1"3"1I, "1"3"3Ba, "1"3"3Xe, "1"3"7Cs, "2"0"1Tl and "2"2"6Ra. K X-rays emitted by samples were counted by a Si(Li) detector with resolution 160 eV at 5.9 keV. Obtained values were compared with the theoretical values. It was observed that present values agree with the previous theoretical and other experimental results.

2007-01-01

44

Ultratrace determination in high purity molybdenum and tungsten with ion chromatographic trace-matrix-separation. Pt. 2; Ultra trace analysis using ion chromatography. Ultraspurenanalytik in hochreinem Molybdaen und Wolfram mit ionenchromatographischer Spuren-Matrix-Trennung. Tl. 2; Ionenchromatographische Ultraspurenanalyse  

Energy Technology Data Exchange (ETDEWEB)

The use of high-performance ion exchangers allows a trace-matrix-separation (SMT) directly followed by an ion chromatographic (IC) separation of the analytes. Based on the principles described in Part 1, a combined procedure IC-SMT-IC for metallic impurities in Mo and W is presented. Up to 12 metal traces (Fe, Cu, Pb, Zn, Ni, Co, Cd, Ca, Mn, Sr, Mg and Ba) can be determined in one run with 35 min. A special method for traces of U and Th is also given. Detection limits are typically 10-100 ng g{sup -1} in the metal sample. (author). 14 refs.; 10 figs.; 6 tabs.

1992-01-31

45

Rapid and cost-effective assessment of connectivity among assemblages of Choerodon rubescens (Labridae), using laser ablation ICP-MS of sagittal otoliths  

British Library Electronic Table of Contents (United Kingdom)

A rapid and cost-effective assessment was required to provide advice to management on the connectivity between juvenile and adult life cycle stages of Baldchin Groper Choerodon rubescens, a labrid endemic to the west coast of Australia, which has high social value, but relatively low commercial fishery importance. To minimise costs we used laser ablation ICP-MS to analyse levels of a small suite of elements (Ca, Mg, Mn, Cu, Zn, Sr, Rb, Ba and Pb) at the margin (adult phase) and core (juvenile phase) of the same otoliths of adult C. rubescens, collected at ten locations in five management zones. The elemental composition of both otolith margins and cores differed significantly among management zones and in some cases among locations within zones. Similarity of the pattern of among-zone elem...

2011-01-01

46

Quality-control materials in the USDA National Food and Nutrient Analysis Program (NFNAP)  

British Library Electronic Table of Contents (United Kingdom)

The US Department of Agriculture (USDA) Nutrient Data Laboratory (NDL) develops and maintains the USDA National Nutrient Databank System (NDBS). Data are released from the NDBS for scientific and public use through the USDA National Nutrient Database for Standard Reference (SR) ( http://www.ars.usda.gov/ba/bhnrc/ndl ). In 1997 the NDL initiated the National Food and Nutrient Analysis Program (NFNAP) to update and expand its food-composition data. The program included: 1) nationwide probability-based sampling of foods; 2) central processing and archiving of food samples; 3) analysis of food components at commercial, government, and university laboratories; 4) incorporation of new analytical data into the NDBS; and 5) dissemination of these data to the scientific community. A key feature and...

2006-01-01

47

Physicochemical investigation of the behavior of elements in chloride melts in the presence of solid phases based on phosphates of polyvalent elements. II. Behavior of strontium and barium  

Energy Technology Data Exchange (ETDEWEB)

The distribution of the alkaline earth elements strontium and barium between the solid phases of phosphates of transition elements of group 4 and chloride melts was studied. The distribution coefficients of strontium and barium were found at T = 700-800/sup 0/C. Phosphates of the type NaM/sub 2//sup (IV)/(PO/sub 4/)/sub 3/, where M/sub (IV)/ represents titanium, zirconium, and hafnium, were used as the solid phases. It was established that there is an enrichment of the precipitates with the distributed components. The distribution coefficient depends on the nature of the solid phase and the temperature. It was suggested that M/sup (II)/ x M/sub 4//sup (IV)/(PO/sub 4/)/sub 6/ is formed in processes of distribution, where M/sup (II)/ represents Sr, Ba.

1987-07-01

48

Determination of macro, micro nutrient and trace element concentrations in Indian medicinal and vegetable leaves using instrumental neutron activation analysis  

Energy Technology Data Exchange (ETDEWEB)

Leafy samples often used as medicine in the Indian Ayurvedic system and vegetables were analyzed for 20 elements (As, Ba, Br, Ca, Ce, Cr, Cs, Co, Eu, Fe, K, La, Na, Rb, Sb, Sc, Sm, Sr, Th, Zn) by employing Instrumental Neutron Activation Analysis (INAA). The samples were irradiated at the 100 kW TRIGA-MAINZ nuclear reactor and the induced activities were counted by gamma ray spectrometry using an efficiency calibrated high resolution High Purity Germanium (HPGe) detector. The concentration of the elements in the medicinal and vegetable leaves and their biological effects on human beings are discussed.

1999-05-01

49

Availability of essential trace elements in Ayurvedic Indian medicinal herbs using instrumental neutron activation analysis  

Energy Technology Data Exchange (ETDEWEB)

Specific parts of several plants (fruits, leaves, stem, bark and roots) often used as medicines in the Indian Ayurvedic system have been analysed for 20 elements (As, Ba, Br, Ca, Cl, Co, Cr, Cu, Fe, K, Mn, Mo, Na, P, Rb, Sb, Sc, Se, Sr and Zn) by employing instrumental neutron activation analysis (INAA). The samples were irradiated with thermal neutrons in a nuclear reactor and the induced activity was counted using high resolution gamma ray spectrometry. Most of the medicinal herbs have been found to be rich in one or more of the elements under study. (Author).

1997-01-01

50

High performance protonic ceramic membrane fuel cells (PCMFCs) with Sm_0_._5Sr_0_._5CoO_3_-_#delta# perovskite cathode  

International Nuclear Information System (INIS)

Protonic ceramic membrane fuel cells (PCMFCs) based on proton-conducting electrolytes have attracted much attention because of many advantages, such as low activation energy and high energy efficiency. A stable, easily sintered perovskite oxide BaCe_0_._5Zr_0_._3Y_0_._1_6Zn_0_._0_4O_3_-_#delta# (BCZYZ) as electrolyte for proton-conducting solid oxide fuel cells (SOFCs) with Sm_0_._5Sr_0_._5CoO_3_-_#delta# (SSC) composite cathode is investigated. By fabricating thin membrane BCZYZ electrolyte (#approx#20 #mu#m) synthesized by a modified Pechini method on NiO-BCZYZ anode support, PCMFCs are assembled and tested by selecting SSC perovskite cathode with high mixed ionic and electronic conductivities. An open-circuit potential of 1.015 V, a maximal power density of 528 mW cm"-"2, and a low polarization resistance of the electrodes of 0.15 #OMEGA# cm"2 is achieved at 700 "oC. The results indicate that BCZYZ proton-conducting electrolyte with SSC ...

2010-04-02

51

Trace elements in the Allende meteorite  

International Nuclear Information System (INIS)

New RNAA determinations of Ba, Sr, Zr, U, Re, Pd, Ag, Zn and Se and INAA measurements of Lu are added to published data for 21 other elements in the same suite of ten samples. On the average, 21 refractory elements are not significantly fractionated from one another. The mean of their enrichment factors relative to C1 chondrites is 17.5 +- 0.4, indicating that the high-temperature condensate inclusions represent 5.7 wt% of the total condensable matter. Os, Ir, Ru, Re and most of the W condensed in one or more refractory siderophile element alloys along with small fractions of the Pd, Co, Au and Ag. The bulk of the Eu and Sr condensed in solid solution in melilite. Sc, Zr, Hf, Ta, U and the remaining REE condensed in a phase whose abundance in the inclusions in negatively correlated with that of melilite, either diopside or one or more minor or trace phases, including perovskite. Ba condensed in a ...

1977-01-01

53

Aerial picture of BA4 at SPS (LHC T18 building site).  

CERN Document Server

Aerial picture of BA4 at SPS (LHC T18 building site).

1999-01-01

54

Lanthanum gallate and ceria composite as electrolyte for solid oxide fuel cells  

International Nuclear Information System (INIS)

The composite of doped lanthanum gallate (La_0_._9Sr_0_._1Ga_0_._8Mg_0_._2O_2_._8_5, LSGM) and doped ceria (Ce_0_._8Sm_0_._2O_1_._9, CSO) was investigated as an electrolyte for solid oxide fuel cell (SOFC). The LSGM-CSO composite was examined by X-ray diffraction (XRD) and impedance spectroscopy. It was found that the sintered LSGM-CSO composite contains mainly fluorite CeO_2 phase and a minority impurity phase, Sm_3Ga_5O_1_2. The LSGM-CSO composite electrolyte shows a small grain boundary response in the impedance spectroscopy as compared to LSGM and CSO pellets. The composite electrolyte exhibits the highest conductivity in the temperature range of 250-600 "oC, compared to LSGM and CSO. The LSGM-CSO composite can be expected to be an attractive intermediate temperature electrolyte material for solid oxide fuel cells.

2010-03-04

55

K-shell x-ray production cross sections of selected elements from Ti to Y for 0.5- to 2.5-MeV alpha-particle bombardment  

International Nuclear Information System (INIS)

K-shell x-ray production cross sections and K#beta#/K#alpha# ratios have been measured for thin targets of Ti, V, Cr, Fe, Ni, Cu, Zn, Ga, As, Se, Rb, Sr, and Y for 0.5- to 2.5-MeV alpha particles. The experimental values are compared to the nonrelativistic plane-wave Born approximation (PWBA), the binary-encounter approximation, and the PWBA with binding energy and Coulomb deflection corrections. The PWBA with corrections provides the best agreement with the experimental cross sections.

56

Determination of ratios of emission probabilities of Auger electrons and K-L-shell radiative vacancy transfer probabilities for 17 elements from Mn to Mo at 59.5keV  

Energy Technology Data Exchange (ETDEWEB)

The measurements of the K X-ray intensity ratio I(K{sub {beta}})/I(K{sub {alpha}}) for the 17 elements Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Br, Rb, Sr, Y, Zr, Nb and Mo have been done following ionization by 59.5keV {gamma}-rays from a {sup 241}Am point source. Ratios of emission probabilities of Auger electrons and the vacancy transfer coefficients have been extracted in terms of the intensity ratios. It is found that the present results agree well with earlier fitted values and the semi-empirical values.

2006-01-15

57

X-ray and UV-light irradiation effects on oxide superconducting thin films  

International Nuclear Information System (INIS)

Oxide superconducting thin films were irradiated with X-rays and ultra-violet (UV) light, and induced radiation effects on electrical and chemical properties were examined by transport measurement, X-ray diffraction analysis (XRD), diamagnetization measurement and X-ray photoemission spectroscopy (XPS). After irradiation for ErBa_2Cu_3O_x films with X-rays emitted from a Rh tube for 100 hours, superconductivity was remarkably damaged, destroying the zero-resistance state. The UV-light irradiation for Bi_2Sr_2CaCu_2O_x films was performed in He gas of about 500 Pa with a low pressure mercury lamp. The superconductivity was gradually degraded with the UV irradiation time up to 70 minutes. In both cases, adequate oxygen-annealing treatments restored superconductivity. The X-ray photoemission spectra showed that the mean Cu valence of the films was decreased approximately from +2 to +1 by the irradiation. From these results we can find that ...

58

Solvent extraction using tetracycline as complexing agent Pt. 14. Study of the behaviour of tetracycline as an extracting agent for some fission products  

Energy Technology Data Exchange (ETDEWEB)

The behaviour of tetracycline as an extracting agent for Sr, I, Ba, Mo, Tc, Zr, Nb, Cs, Ru, Te and U was studied and the influence of the acidity of the aqueous phase upon extraction of the elements mentioned was examined. Experiments were made to determine whether the species extracted into the organic phase is the complex formed between tetracycline and the elements considered and to determine the time of shaking necessary so that the equilibrium between the phases is attained. As a practical application, the possibility of using the tetracycline-benzyl alcohol system for separating the fission products sup(137)Cs, sup(140)La, sup(141)Ce, sup(103)Ru, sup(95)Nb from each other and from uranium is presented. The same study was made for sup(131)I, sup(99m)Tc, sup(99)Mo, sup(132)Te, sup(239)Np and uranium and the steps necessary for the separation of these elements are proposed.

1985-10-01

59

Solid electrolyte and lithium battery employing it. Kotai denkaishitsu oyobi sore wo shiyo shite naru richiumu denchi  

Energy Technology Data Exchange (ETDEWEB)

Recently, the lithium ion-conductive solid electrolyte draws attention because there is a possibility of producing the maintenance-free battery which is characterized by having such advantages as high energy density and no possibility of electrolyte leak because of solid state structure. The invented lithium ion-conductive solid electrolyte is formed by sintering the granular electrolyte expressed in the following general formula: Li(1+(4-n)x)MxTi(2-x)(PO4)3 (M = mono- or di-valent cation, x = 0.1 - 0.5). Examples of the monovalent cation are Na[sup +], K[sup +], Rb[sup +], Cs[sup +], and Cu[sup +]. Examples of divalent cation are Mg[sup 2+], Fe[sup 2+], Be[sup 2+], Ca[sup 2+], Sr[sup 2+], Ba[sup 2+], Ra[sup 2+], Mn[sup 2+], Co[sup 2+], Cu[sup 2+], Ni[sup 2+], Zn[sup 2+], and Cd[sup 2+]. The electric conductivity of lithium ion is increased with the increase in the content of Li[sup +] in the electrolyte. 4 figs.

1993-11-12

60

Paramagnetic susceptibility of nonstoichiometric fluorides with the fluorite-type structure  

Energy Technology Data Exchange (ETDEWEB)

Magnetic properties of single crystals of nonstoichiometric fluorides M[sub 1-x]R[sub x]F[sub 2+x] (M = Ca, Sr, Ba; R = Ce, Pr, Nd, Gd, Ho, Er, Tm, Yb; with 0.05 [le] x [le] 0.28) with the fluorite-type structure have been studied for the first time. The magnetic susceptibility was measured using a Faraday balance in the 15-300 K temperature range. The samples are paramagnetic following the Curie-Weiss law. The values of paramagnetic Curie temperatures and effective magnetic moments of rare-earth ions have been found. Deviations of the temperature dependence of magnetic susceptibility from the Curie-Weiss law are observed for some nonstoichiometric fluorides at temperatures ranging from 60 to 85 K. Possible reaons for these deviations are discussed. Measurements of magnetic susceptibility provide an effective technique for a rapid and accurate determination of the concentration of rare-earth ions in nonstoichiometric fluorides.

1993-01-01

61

NMR in highly correlated superconductors  

International Nuclear Information System (INIS)

Results of our systematic NMR study in high T_c cuprates are reviewed. The antiferromagnetic spin fluctuations (AFSF) decrease in the order of La_1_._8_5Sr_0_._1_5CuO_4. YBa_2Cu_3O_7 and Tl_2Ba_2CuO_6_+_y. 1/T_1 of "6"3Cu in the CuO_2 plane in the normal state follows essentially a Curie-Weiss law at high temperature and T_1T = const. law at low temperature. The temperature dependence of 1/T_1 and the Knight shift together with their impurity effect in the superconducting state strongly suggest d-wave pairing implying the AFSF to be responsible for the occurrence of superconductivity. From the NQR frequency measurement the density of Cu 3d and O 2p holes decreases and increases, respectively, in the order of La, Y and Tl compounds, which is consistent with the change of AFSF. The relation between T_c and #nu#_Q, and their pressure dependence suggest that there exists and optimum value of the ratio of Cu 3d and O 2p hole density to give a ...

1992-08-01

62

Estimation tests for effecting factor on decontamination property in crystallization process  

International Nuclear Information System (INIS)

Crystallization procedure is considered to have adaptability to new reprocessing process based on the PUREX process because it has an advantage in recovering rather pure uranium from contaminated uranium solution without reagent. NEXT (New Extraction System for TRU Recovery) process has been developed by JNC, and applying the crystallization process unit to NEXT process has a capability to contribute to an improvement of economical efficiency and reduction of liquid waste in NEXT process. Thus following studies were carried out. In crystallization process unit, UNH (Uranyl Nitrate Hydrate)-crystals are washed by a nitric acid solution to get high decontamination factor, but the data on UNH-crystals dissolution by washing procedure is insufficient to evaluate the effectiveness of crystallization process unit. So, in this study, the effect of a nitric acid concentration to UNH-crystals dissolution and decontamination factor was tested. As results, it was found that UNH-crystals ...

63

XRF analysis of rock and sediment using standard rock samples  

Energy Technology Data Exchange (ETDEWEB)

A simple and rapid method is described for the determination of major and trace elements in rock and sediment samples by wavelength dispersive XRF. Sample measured were made from cellulose powder pressed into 4 cm diameter aluminium ring 0.4 t cm/sup -2/, and then 1 g of powdered sample (0.08 g cm/sup -2/) was placed on the disk and repressed at 1.6 t cm/sup -2/. X-ray measurements were performed for total XRF intensity (I/sub p/) at the characteristic line of each element and background intensity (I/sub b/) in vicinity of the line. The correction of matrix effect was achieved by X-ray intensity ratio of peak to background for each element. Eight standard rock samples from Geological Survey of Japan were used as standard materials, and linear calibration curves were obtained by the plot of I/sub p/ - I/sub b/ vs. concentration for Ca, Na and Pb and by the plot of I/sub p//I/sub b/ ratio vs. concentration for Si, Fe, Ti, K, P, Cl, Cr, Mn, Ni, Cu, Zn, Pb, Sr and ...

1987-03-01

64

XRF analysis of rock and sediment using standard rock samples  

International Nuclear Information System (INIS)

A simple and rapid method is described for the determination of major and trace elements in rock and sediment samples by wavelength dispersive XRF. Sample measured were made from cellulose powder pressed into 4 cm diameter aluminium ring 0.4 t cm"-"2, and then 1 g of powdered sample (0.08 g cm"-"2) was placed on the disk and repressed at 1.6 t cm"-"2. X-ray measurements were performed for total XRF intensity (I_p) at the characteristic line of each element and background intensity (I_b) in vicinity of the line. The correction of matrix effect was achieved by X-ray intensity ratio of peak to background for each element. Eight standard rock samples from Geological Survey of Japan were used as standard materials, and linear calibration curves were obtained by the plot of I_p - I_b vs. concentration for Ca, Na and Pb and by the plot of I_p/I_b ratio vs. concentration for Si, Fe, Ti, K, P, Cl, Cr, Mn, Ni, Cu, Zn, Pb, Sr and Ba, respectively. The ...

65

Evaluation of a novel radiopacifiying agent on the physical properties of surgical spineplex.  

Science.gov (United States)

Polymethlylmethacrylate (PMMA) is the most frequently used cement for percutaneous vertebroplasty and kyphoplasty. To aid visualisation during surgery cements are doped with radiopacifying agents such as Barium sulphate (Ba(2)SO(4)) or Zirconium Dioxide (ZiO(2)). Mounting research suggests that these agents may impair the biocompatibility of the cements. However, incorporating an alternative radiopacifier agent with excellent biocompatibility would be a significant step forward. Bioactive radiopaque glasses incorporating elements such as strontium (Sr) and zinc (Zn), known to have beneficial and therapeutic effects on bone, are of great interest in this respect. In this study, the Ba(2)SO(4) of the commercially available Spineplex was incrementally replaced with a radiopaque therapeutic glass composition. The resulting effects on cement setting time, peak isotherm, ultimate compressive strength, Young's modulus (up to 30 ...

2009-08-18

66

Evaluation of BaZr0.1Ce0.7Y0.2O3-?-based proton-conducting solid oxide fuel cells fabricated by a one-step co-firing process  

International Nuclear Information System (INIS)

Proton-conducting solid oxide fuel cells, incorporating BaZr0.1Ce0.7Y0.2O3-? (BZCY) electrolyte, NiO-BZCY anode, and Sm0.5Sr0.5CoO3-?-Ce0.8Sm0.2O2-? (SSC-SDC) cathode, were successfully fabricated by a combined co-pressing and printing technique after a one-step co-firing process at 1100, 1150, or 1200 oC. Scanning electron microscope (SEM) results revealed that the co-firing temperature significantly affected not only the density of the electrolyte membrane but the grain size and porosity of the electrodes. Influences of the co-firing temperature on the electrochemical performances of the single cells were also studied in detail. Using wet hydrogen (2% H2O) as the fuel and static air as the oxidant, the cell co-fired at 1150 oC showed the highest maximum power density (PDmax) of 552 and 370 mW cm-2 at 700 and 650 oC, respectively, while the one co-fired at 1100 oC showed the highest PDmax of 276 and 170 mWcm-2 at 600 and 550 oC, respectively. ...

2011-01-01

67

Evidence for the presence of two supracrustal sequences in the central Wind River Mountain, Wyoming  

Energy Technology Data Exchange (ETDEWEB)

Supracrustal rocks, although volumetrically minor, are found throughout the Archean basement of the central and northern Wind River Mountains. Detailed mapping in the Medina Mountain area suggests that at least two discrete sedimentation events are preserved. The older sequence occurs as melanosomes in a multiple deformed migmatitic gneiss. Rock types include mafic rocks (metavolcanics.), calc-silicates, iron formation and rare pelites. Although retrogression is widespread, small patches with granulite mineralogies are found preserved. The younger supracrustal sequence consists of banded amphibolites, calc-silicates, semipelitic and pelitic gneiss. These rocks form synformal structures that are up to 4 km in length. The coherent nature of these rocks and the lack of the aforementioned porphyritic dikes strongly suggests that this sequence, the Medina Mountain. Supracrustals (MMS) is considerably younger than the supracrustal rocks found in the migmatites. The authors propose that the ...

1985-01-01

69

Crystal and electronic structures, luminescence properties of Eu2+-doped Si6-zAlzOzN8-z and MySi6-zAlz-yOz+yN8-z-y (M=2Li, Mg, Ca, Sr, Ba)  

International Nuclear Information System (INIS)

The crystal structure, electronic structure, and photoluminescence properties of EuxSi6-zAlz-xOz+xN8-z-x (x=0-0.1, 0xMySi6-zAlz-x-yOz+x+yN8-z-x-y (M=2Li, Mg, Ca, Sr, Ba) have been studied. Single-phase EuxSi6-zAlz-xOz+xN8-z-x can be obtained in very narrow ranges of x?0.06 (z=0.15) and z2+ ions can be incorporated into nitrogen-rich Si6-zAlzOzN8-z. The Eu2+ ion is found to occupy the 2b site in a hexagonal unit cell (P63/m) and directly connected by six adjacent nitrogen/oxygen atoms ranging 2.4850-2.5089 A. The calculated host band gaps by the relativistic DV-X? method are about 5.55 and 5.45 eV (without Eu2+ 4f5d levels) for x=0 and 0.013 in EuxSi6-zAlz-xOz+xN8-z-x (z=0.15), in which the top of the 5d orbitals overlap with the Si-3s3p and N-2p orbitals within the bottom of the conduction band of the host. EuxSi6-zAlz-xOz+xN8-z-x shows a strong green emission with a broad Eu2+ band centered at about 530 nm under UV to near-UV excitation range. ...

2008-12-01

70

Electronic structure of Ba(Sn,Sb)O_3: Absence of superconductivity  

International Nuclear Information System (INIS)

The electronic structures of BaSnO_3, BaSbO_3, and BaPbO_3, calculated using an extended general-potential linearized augmented-plane-wave method, are reported. The electronic structures of BaSnO_3 and its 6s analog BaPbO_3 are found to be very different, explaining the absence of superconductivity in the Ba(Sn,Sb)O_3 system. These differences are explained by a combination of the relativistic lowering of the 6s states and ion-size effects. Muffin-tin-approximation augmented-plane-wave calculations for BaSnO_3 are also reported and the utility of the muffin-tin approximation for this and similar materials is discussed in terms of the differences between the two sets of calculations.

71

Clinical Investigation Program, Reports Control Symbol MED ...  

Science.gov (United States)

... POG Cook, BA A Case Control Study of Childhood 147 8552(85) Rhabdomyosarcoma (0) POG COOK, BA Phase II Study of 6-Mercaptopurine ...

1988-10-01

72

Structure and magnetic properties of nanostructural strontium ferrite prepared by mechanochemical treatment  

International Nuclear Information System (INIS)

Full text: It was recently-established for hexagonal barium ferrite-industrially important magnetically hard material that refinement of the crystallite dimensions into the nanoscale regime, typically #<=# 10 nm, leads after heat treatment at temperatures 800-1000 deg C to significant coercivity increase of up to 6.5 kOe (#approx#3-4 times) with saturation magnetisation values of 50-55 emu/g (#approx#95% of bulk at room temperature). High-energy mechanochemical processing has been applied to prepare nanostructural (nanocrystalline-amorphous) composites. High resolution electron microscopy studies reveal that the enhancement of the final magnetic properties was due to formation of magnetically noninteracting #approx#l,#mu#m Ba-ferrite particles with 5-10 nm amorphous surface layer - depending on annealing parameters. Similar situation was established also for ball milled strontium ferrite (SrFe_1_2O_1_9) powders where short annealing 4 h at ...

73

Elastic recoil detection analysis of ferroelectric films  

Energy Technology Data Exchange (ETDEWEB)

There has been considerable progress in developing SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub O.7}Sr{sub O.3}TiO{sub 3} (BST) ferroelectric films for use as nonvolatile memory chips and for capacitors in dynamic random access memories (DRAMs). Ferroelectric materials have a very large dielectric constant ( {approx} 1000), approximately one hundred times greater than that of silicon dioxide. Devices made from these materials have been known to experience breakdown after a repeated voltage pulsing. It has been suggested that this is related to stoichiometric changes within the material. To accurately characterise these materials Elastic Recoil Detection Analysis (ERDA) is being developed. This technique employs a high energy heavy ion beam to eject nuclei from the target and uses a time of flight and energy dispersive (ToF-E) detector telescope to detect these nuclei. The recoil nuclei carry both energy and mass ...

1996-12-31

74

Low-temperature specific heat of the high-T/sub c/ superconductors La/sub 1. 8/Sr/sub 0. 2/CuO/sub 4-//sub delta/ and RBa/sub 2/Cu/sub 3/O/sub 7-//sub delta/ (R = Y, Eu, Ho, Tm, and Yb)  

Energy Technology Data Exchange (ETDEWEB)

Low-temperature specific-heat measurements have been carried out between 0.5 and 30--50 K on the high-T/sub c/ copper oxide superconductors La/sub 1.8/Sr/sub 0.2/CuO/sub 4-//sub delta/ and RBa/sub 2/Cu/sub 3/O/sub 7-//sub delta/ (R = Y, Eu, Ho, Tm, and Yb). The specific heat of the La/sub 1.8/Sr/sub 0.2/CuO/sub 4-//sub delta/ and YBa/sub 2/Cu/sub 3/O/sub 7-//sub delta/ compounds below T/sub c/ can be resolved into a contribution of the form C/sub e/(T) = ..gamma..'T with a finite ..gamma..' and a lattice contribution that consists of Debye and Einstein terms. Specific-heat data for the RBa/sub 3/Cu/sub 3/O/sub 7-//sub delta/ compounds with R = Ho, Tm, and Yb exhibit no features due to magnetic order above 0.5 K, but reveal electronic Schottky anomalies associated with crystalline electric field (CEF) splitting of the Hund's-rules ground-state multiplet of the R/sup 3+/ ions. The Schottky anomalies can be described by ...

1988-02-01

75

Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces  

International Nuclear Information System (INIS)

We have investigated the formation and coarsening of Ga droplets on focused-ion-beam (FIB) irradiated GaAs surfaces. To separately examine formation and coarsening, Ga droplets were fabricated by Ga"+ FIB irradiation of GaAs substrates with and without pre-patterned holes. We determined the droplet growth rate and size distribution as a function of FIB energy following irradiation. The data suggest a droplet formation mechanism that involves Ga precipitation from a Ga-rich layer, followed by droplet coarsening via a combination of diffusion and Ostwald ripening or coalescence via droplet migration (dynamic coalescence).

2009-10-12

76

[The indicators of biological age and accelerated aging in liquidators of the consequences of radiation emergency].  

Science.gov (United States)

The biological age (BA) of the majority of the liquidators of the consequences of the radiation accidents in the Navy and of the liquidators of the Chernobyl' APS accident exceeds the medium standard and the DBA (due BA). The index of the BA can be a characteristic of the influence of the social-hygienic factors on the health condition of the Special Risk Subunit--the liquidators of the consequences of the radiation accidents. It was established, that the radiation influence concerns to the factors dramatically increasing the BA and the rate of senescence of the liquidators of the consequences of the radiation accidents. PMID:21809627

2011-01-01

78

Phase equilibria of the Ba-Sm-Y-Cu-O system for coated conductor applications  

International Nuclear Information System (INIS)

The complex phase relationships near the BaO-poor region of the quaternary Ba-Sm-Y-Cu-O oxide system prepared in pure air (pO2=22 kPa, 950 oC) and in 0.1% O2 (pO2=100 Pa, 810 oC) have been determined. This investigation also included the subsolidus compatibilities in ten subsystems (Ba-Sm-Y-O, Ba-Sm-Cu-O, Ba-Y-Cu-O, Sm-Y-Cu-O, Ba-Sm-O, Ba-Y-O, Ba-Cu-O, Sm-Y-O, Sm-Cu-O, and Y-Cu-O), and the homogeneity range of five solid solutions (Ba(SmxY2-x)CuO5, (Sm,Y)2O3, (Sm,Y)2CuO4, (Y,Sm)2Cu2O5, and Ba(Sm,Y)2O4). The single phase range of the superconductor solid solution, (Ba2-xSmx)(Sm1-yYy)Cu3O6+z, and the phase compatibilities in its vicinity, which are particularly important for processing, are described in detail. The phase equilibrium data of the ...

2010-12-01

79

Radioisotope production in the I.Ph.P.E. cyclotron for medical application  

International Nuclear Information System (INIS)

The production methods for seven radioisotopes, Ga-67, Sr-85, Pd-103, In-111, Tu-167, Hg-197 and Pb-203, by using a classical 1.5m cyclotron in the Institute of Physics and Power Engineering, Obninsk, USSR, are described. At present, more than 50 cyclotrons in different countries are used for the production of radioisotopes applied to medicine. Radioisotopes are produced with the cyclotron in the I.Ph.P.E. in the form of irradiated targets, which are delivered to Moscow radiopharmaceutical factory, where radiopharmaceuticals are produced on the base of these targets. The cyclotron is operated in two regimes providing the acceleration of protons, deuterons and alpha -particles. Two types of target assemblies are used for irradiation, the one is intended for the internal beam, and the other is for the external beam. The reactions used for the production of seven radioisotopes described above, the types of targets, particle energy, respective ...

80

Radioisotope production in the I. Ph. P. E. cyclotron for medical application  

Energy Technology Data Exchange (ETDEWEB)

The production methods for seven radioisotopes, Ga-67, Sr-85, Pd-103, In-111, Tm-167, Hg-197 and Pb-203, by using a classical 1.5m cyclotron in the Institute of Physics and Power Engineering, Obninsk, USSR, are described. At present, more than 50 cyclotrons in different countries are used for the production of radioisotopes applied to medicine. Radioisotopes are produced with the cyclotron in the I.Ph.P.E. in the form of irradiated targets, which are delivered to Moscow radiopharmaceutical factory, where radiopharmaceuticals are produced on the base of these targets. The cyclotron is operated in two regimes providing the acceleration of protons, deuterons and alpha -particles. Two types of target assemblies are used for irradiation, the one is intended for the internal beam, and the other is for the external beam. The reactions used for the production of seven radioisotopes described above, the types of targets, particle energy, respective ...

1982-01-01

82

Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping  

Energy Technology Data Exchange (ETDEWEB)

The authors report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good ...

2000-07-01

83

OMVPE growth of GaP and AlGaP using tertiarybutylphosphine as the phosphorus source  

Energy Technology Data Exchange (ETDEWEB)

GaP and AlGaP were grown by atmospheric pressure OMVPE on GaP substrates using tertiarybutylphosphine as the phosphorus source. A specular surface of GaP was obtained on a (100) just-oriented surface at 700deg C. Hazy but uniform thickness AlGaP was obtained. The growth efficiency for GaP was 1.2x10{sup 3}{mu}m/mol and that for AlGaP was 2.1x10{sup 3}{mu}m/mol.4.2 K photoluminescence showed near-edge emission from both GaP and AlGaP. (orig.).

1991-03-01

85

Preparation and characterization of Co-doped BaTiO{sub 3} nanosized powders and ceramics  

Energy Technology Data Exchange (ETDEWEB)

The Co-doped BaTiO{sub 3} nanosized powders and ceramics were prepared via the sol-gel process. The powders and ceramics were characterized by methods of XRD, SEM and TEM. The dielectric properties of the ceramics were also determined by these methods. The influence of sintering temperature, sintering time and Co concentration on the microstructure and dielectric properties was discussed. The results revealed that the powders were in nanometer scale (30-50 nm) and were mainly composed of cubic BaTiO{sub 3} phase and small amount of BaCO{sub 3}. After sintering, both the cubic BaTiO{sub 3} and BaCO{sub 3} were transformed into tetrahedron BaTiO{sub 3}. The sintering temperatures of the Co-doped BaTiO{sub 3} ceramics decreased (about 100 deg. C) and the Curie temperatures of the ceramics were then moved to lower temperature. In addition, the ...

2006-08-25

86

Mineralogy and geochemistry of the No. 6 Coal (Pennsylvanian) in the Junger Coalfield, Ordos Basin, China  

Energy Technology Data Exchange (ETDEWEB)

This paper discusses the mineralogy and geochemistry of the No. 6 Coal (Pennsylvanian) in the Junger Coalfield, Ordos Basin, China. The results show that the vitrinite reflectance (0.58%) is lowest and the proportions of inertinite and liptinite (37.4% and 7.1%, respectively) in the No. 6 Coal of the Junger Coalfield are highest among all of the Late Paleozoic coals in the Ordos Basin. The No. 6 Coal may be divided vertically into four sections based on their mineral compositions and elemental concentrations. A high boehmite content (mean 6.1%) was identified in the No. 6 Coal. The minerals associated with the boehmite in the coal include goyazite, rutile, zircon, and Pb-bearing minerals (galena, clausthalite, and selenio-galena). The boehmite is derived from weathered and oxidized bauxite in the weathered crust of the underlying Benxi Formation (Pennsylvanian). A high Pb-bearing mineral content of samples ZG6-2 and ZG6-3 is likely of hydrothermal origin. The No. 6 coal is enriched in ...

2006-04-03

87

Advances in the development of an AlGaAs/GaAs cascade solar cell using a patterned germanium tunnel interconnect  

Energy Technology Data Exchange (ETDEWEB)

In this paper, we discuss various aspects of the development of an inverted-grown AlGaAs/GaAs cascade solar cell incorporating a patterned germanium tunnel junction. Topics include the development of the Al{sub 0.37}Ga{sub 0.63}As top cell, the growth of the GaAs bottom cell over the patterned germanium tunnel junction, and a technique for selective removal of thin AlGaAs/GaAs heterostructures after lattice-matched growth on germanium substrates. The problems to be overcome for the achievement of around 30% efficiencies in the AlGaAs/GaAs cascade cell under concentrator applications are also discussed. (orig.).

1991-05-01

88

Effect of Ba on ferroelectric and piezoelectric properties of the PLZT (1.2/55/45) system  

International Nuclear Information System (INIS)

Ferroelectric Pb_0_._9_8_2_-_zLa_0_._0_1_2#DELTA#_0_._0_0_6Ba_z(Zr_0_._5_5Ti_0_._4_5)O_3 (PLZT; z = 0-6 mol%) ceramic compositions were fabricated by a mixed-oxide method. X-ray diffraction studies of sintered ceramics indicate the coexistence of rhombohedral and tetragonal phases in the 5 mol% Ba-doped PLZT composition. Grain growth is inhibited with increasing Ba concentration in the PLZT system as evidenced by scanning electron micrographs. Dielectric constant and dielectric loss as a function of temperature suggest that #epsilon#_r_t and tan #delta# are increased up to compositions containing 4 and 5 mol% Ba, respectively. The dielectric maximum (#epsilon#_T_c) decreased to 4 mol% Ba and gradually increased to 6 mol% Ba, whereas, with increasing Ba concentration in the PLZT system, the Curie temperature (T_C) decreased from the ...

2006-06-01

89

Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies  

Energy Technology Data Exchange (ETDEWEB)

The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480 /sup 0/C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni/sub 3/GaAs. Ternary phases of the type Pd/sub x/GaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M--Ga--As thin-film phase diagrams. The behavior of a thin (1--2 nm) native ...

1987-03-01

90

High-optical-quality GaInP and GaInP/AlInP double heterostructure lasers grown on GaAs substrates by gas-source molecular-beam epitaxy  

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

1989-11-01

91

RangerMaster{trademark}: Real-time pattern recognition software for in-field analysis of radiation sources  

Energy Technology Data Exchange (ETDEWEB)

RangerMaster{trademark} is the embedded firmware for Quantrad Sensor`s integrated nuclear instrument package, the Ranger{trademark}. The Ranger{trademark}, which is both a gamma-ray and neutron detection system, was originally developed at Los Alamos National Laboratory for in situ surveys at the Plutonium Facility to confirm the presence of nuclear materials. The new RangerMaster{trademark} software expands the library of isotopes and simplifies the operation of the instrument by providing an easy mode suitable for untrained operators. The expanded library of the Ranger{trademark} now includes medical isotopes {sup 99}Tc, {sup 201}Tl, {sup 111}In, {sup 67}Ga, {sup 133}Xe, {sup 103}Pa, and {sup 131}I; industrial isotopes {sup 241}Am, {sup 57}Co, {sup 133}Ba, {sup 137}Cs, {sup 40}K, {sup 60}Co, {sup 232}Th, {sup 226}Ra, and {sup 207}Bi; and nuclear materials {sup 235}U, {sup 238}U, {sup 233}U, and {sup 239}Pu. To accomplish isotopic ...

1998-12-31

93

AC.MDM3 - NAIF  

Science.gov (United States)

... }wtv{tv|l^\\h xuwxsqs |qhlnnusnvsqvwzvsrsstrpokfb`ba`]chc][TSWg nkjsrkjkdcenz |{|{{{w khghfbddkmhkljnkeexhgrnimppqsovr|umnmgloplqqqv ~soljowwvvt{|rsuqtp ...

94

Strontium removal from caustic carbonate waste solutions using carrier coprecipitation  

Energy Technology Data Exchange (ETDEWEB)

A carrier coprecipitation procedures has been developed for the removal of radioactive strontium from caustic liquid low-level waste (LLLW) generated at Oak Ridge National Laboratory. The two-step treatment process involves the addition of normal Sr (as SrCl{sub 2}) to the waste matrix, which is composed primarily of 0.3 M NaOH and 0.6 M Na{sub 2}CO{sub 3}. The active Sr equilibrates with the normal Sr carrier and coprecipitates as SrCO{sub 3} at pH 13. A liquid/solid separation is made before the pH of the supernate is reduced to pH 8 with sulfuric acid. During the neutralization step, the aluminum is the waste precipitates as Al(OH){sub 3}. Further Sr decontamination is achieved as traces of active Sr sorb to the Al(OH){sub 3} that precipitates during the neutralization step. A final liquid/solid separation is made at pH 8 to remove the ...

1994-12-31

95

Sr3(Al3+xSi13?x)(N21?xO2+x):Eu2+ (x ? 0): a monoclinic modification of Sr-sialon  

UK PubMed Central (United Kingdom)

The structure of the title compound, Sr-bearing oxonitrido­aluminosilicate (Sr-sialon), contains two types of channels running along the a axis, with the three unique Sr atoms...Full Text Available

96

Complete spectroscopy of "8"7","8"8","8"9Sr with (n,#gamma#) and (d,p) reactions?  

International Nuclear Information System (INIS)

We conducted (n, #gamma#) and (d, p) reactions leading to "8"7", "8"8", "8"9"Sr in addition to "8"8Sr (d, t) "8"7Sr and 24 keV neutron capture in "8"8Sr. (orig./HSI).

97

Isobaric analog states in the "8"8Sr(p,n)"8"8Y and "8"8Sr(p,p)"8"8Sr reactions  

International Nuclear Information System (INIS)

... isobaric analogs mev range 01-10 neutrons nuclear reactions nuclear theory

98

Cross-section measurements for (n, 2a) (n, p) and (n, #alpha#) reactions on strontium isotopes at the neutron energy about 14 MeV  

International Nuclear Information System (INIS)

Cross-sections for "8"4Sr(n, 2n)"8"3Sr, "8"6Sr(n, 2n)"8"5"mSr, "8"6Sr(n, 2n)"8"5Sr, "8"8Sr(n, 2n)"8"7"mSr, "8"4Sr(n, p)"8"4Rb, "8"6Sr(n, p)"8"6Rb, "8"8Sr(n, p)"8"8Rb and "8"8Sr(n, #alpha#)"8"5"mKr reactions have been measured at neutron energies from 13.5 to 14.6 MeV using activation technique and by means of #gamma#-ray spectrometry. The neutron flux was determined using the monitor reaction "9"3Nb(n, 2n)"9"2"mNb and the neutron energies were measured by the method of cross-section ratios for "9Zr(n, 2n)"8"9Zr to "9"3Nb (n, 2n)"9"2"mNb reactions. The results of present work are compared with data published previously.

2006-01-01

99

Migration of strontium in the food chain of plants, animals and man - problems and risks  

International Nuclear Information System (INIS)

The aims of investigation were to follow the Sr transport in the food chain from the flora to the fauna and humans, and its dependence on the geological origin og the plant site, industrial emissions, the age and site of plants, the part of plant used for nutrition and the strontium content in the drinking water, to determine the Sr intake of humans with the help of the duplicate method, and to estimate the apparent absorption rate and balance of strontium depending on of the form of diet (mixed or ovolactovegetarian), sex, season, age, region (geological origin of the living space) and method of intake measurement (duplicate or basket method). Strontium, an ultra trace element widespread in the earth's crust, is not essential and only mildly toxic for plants, animals and man according to current knowledge. The biological essentiality of Sr has not been investigated yet. Amoeba species living in sea water use ...

2008-10-15

100

Parities of strong dipole ground state transitions in /sup 88/Sr  

Energy Technology Data Exchange (ETDEWEB)

The unknown parities of five strong dipole states between 6 and 8 MeV in /sup 88/Sr are shown to be negative.

1981-09-01

101

Parities of strong dipole ground state transitions in "8"8Sr  

International Nuclear Information System (INIS)

The unknow parities of five strong dipole states between 6 and 8 MeV in "8"8Sr are shown to be negative. (orig.).

103

High resolution (p,p') reactions on "8"7Sr and "8"8Sr  

International Nuclear Information System (INIS)

... levels excited states mev range 10-100 proton reactions proton spectra protons

104

Development of GaInAsP for GaInAsP/Ge cascade solar cells  

Energy Technology Data Exchange (ETDEWEB)

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. ...

1992-12-01

105

NMR study of Ba2"+ ion motion in one-dimensional ionic conductor with hollandite-type structure  

International Nuclear Information System (INIS)

Ionic motion of a divalent cation, Ba"2"+, in a single crystal of Ba-Al-priderite was studied using "2"7Al as an NMR probe. Several pairs of satellite peaks due to electric quadrupole interaction were observed superposed on broad satellite tails on both sides of the main peak of "2"7Al. These peak pairs indicate the existence of some stable three-dimensional configurations of Ba"2"+ ions in the structure, and the broad shoulders show a random substitution of Al"3"+ for Ti"4"+ sites. The temperature dependence of the spin-lattice relaxation time T"*_l measured in the temperature range from 161 to 1176 K was analyzed by a curve fitting method on the assumption that there are two types of Ba"2"+ ions. An activation energy of 0.47 eV was obtained for the motion of Ba"2"+ ions which are easy to move, and a broad distribution of activation energies spread over a range from 0.95 to 2.45 eV ...

106

Local structure of Ca dopant in BaTiO_3 by Ca K-edge X-ray absorption near-edge structure and first-principles calculations  

International Nuclear Information System (INIS)

The local environment of Ca dopants in barium titanate, BaTiO_3, is investigated by Ca K-edge X-ray absorption near-edge structure (XANES) spectroscopy. In conjunction with experiments, first-principles calculations by two methods are systematically made. The projector-augmented wave (PAW) method is used to optimize the local structure and obtain the formation energy. The augmented plane wave plus local orbitals method is adopted to obtain theoretical XANES spectra. A comparison between experimental and theoretical XANES spectra shows that Ca dopants are located at the Ba"2"+ sites forming Ca"2"+. Formation energy calculations of Ca doped BaTiO_3 by the PAW method also give the same results. The Ca atom in BaTiO_3 is off-centering in comparison with the Ba site in BaTiO_3. The off-centering of Ca atom is newly revealed by the combination of XANES spectroscopy ...

2010-06-01

107

High performance AlGaN/GaN HEMTs with 2.4 #mu#m source-drain spacing  

International Nuclear Information System (INIS)

This paper describes the performance of AlGaN/GaN HEMTs with 2.4 #mu#m source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 #mu#m source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

2010-03-01

108

GaInP[sub 2]/GaAs tandem cells: Problems and solutions  

Energy Technology Data Exchange (ETDEWEB)

The various factors that affect the open-circuit voltage ([ital V][sub oc]) of a two-terminal GaInP[sub 2]/GaAs tandem cell are examined. These include a) an anomalous problem associated with the GaAs bottom cell and b) back surface passivation of the thin GaInP[sub 2] top cell. Solutions to these problems are presented and yield tandem [ital V][sub oc]s close to the practical theoretical limits.

1992-12-01

109

Femtosecond Laser Passivation of GaAs Detector Material  

Science.gov (United States)

... The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with ...

2008-06-07

110

Excitonic transitions in InGaP/InAlGaP strained quantum wells  

Science.gov (United States)

Excitonic transitions in metalorganic vapor phase epitaxially grown In[sub [ital x

1993-08-30

111

AlxGa1-xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures  

British Library Electronic Table of Contents (United Kingdom)

We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2nm GaN quantum well width and 15nm AlxGa1-xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift.

2009-01-01

112

Ab initio-based approach on initial growth kinetics of GaN on GaN (001)  

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations that incorporate free energy of the vapor phase in order to determine the initial growth process of cubic GaN on GaN (001)-(4x1). The results suggest that a N-adsorbed structure appears at the initial growth stage and then Ga adsorbs on the N-adsorbed GaN (001)-(4x1) surface. Considering this process, we performed Monte Carlo simulations. The results suggest that the maximum point of Ga coverage after supplying a Formula Not Shown monolayer of atoms shifted toward a Ga-rich condition from V/III=1.0.

2007-01-01

113

Ultrafast carrier dynamics of InGaAsN and InGaAs single quantum wells  

International Nuclear Information System (INIS)

Striking differences in differential reflectance and carrier relaxation in In0.4Ga0.6As and In0.4Ga0.6As0.98N0.02 single quantum wells (SQWs) were studied using ultrafast time-resolved photoreflectance. Even with extremely thin SQW of only 60 A within 3000 A wide GaAs confining layers, negative and positive differential reflectance was observed for the excitation photon energy far above the bandgaps at 820 and 880 nm for both samples. Due to absorption by the GaAs confining layer, the peak differential reflectance pumped at 820 nm is an order of magnitude larger than that pumped at 880 nm; and it is larger for InGaAs SQWs than for InGaAsN SQWs. The shorter carrier lifetimes of these samples result from carrier-carrier scattering as pumped at both wavelengths. The longer carrier lifetime as pumped at 880 nm is due to hot phonon decay in ...

2008-04-21

114

Theoretical approach to initial growth kinetics of GaN on GaN(001)  

British Library Electronic Table of Contents (United Kingdom)

We carried out theoretical analyses based on ab initio calculations incorporates in which free energy of the vapor phase is incorporated in order to determine the initial growth kinetics of c-GaN on GaN(001)-(4x1). The feasibility of the theoretical approach had been confirmed by calculations of Ga adsorption-desorption transition temperature and transition beam equivalent pressures on the GaAs(001)-(4x2)b2 surface in our previous work [Y. Kangawa, T. Ito, A. Taguchi, K. Shiraishi, T. Ohachi, Surf. Sci. 493 (2001) 178]. The results of calculations suggest that no Ga adsorption occurs on the initial surface under typical growth conditions but that a Ga adsorption site appears after N adsorption on GaN(001)-(4x1). That is, in the initial growth stage of c-GaN on GaN(001)-(4x1), a N-adsorbed ...

2007-01-01

115

High-efficiency GaAs solar cells  

Energy Technology Data Exchange (ETDEWEB)

An updated review of the state of the art in the development of GaAs solar cells is provided, with emphasis on AlGaAs-GaAs cells suitable for space applications. A set of theoretically derived characteristics is given for this type of solar cell. Comparison of measured performance with theory shows excellent agreement. Data on the effects of radiation damage (high-energy electrons, protons, and neutrons) is also integrated into a form useful for evaluation purposes. Techniques for fabricating (AlGa)As-GaAs solar cells in quantities large enough for practical applications are discussed and are shown to have been demonstrated. The possibility of extending these techniques to the fabrication of very thin low-weight cells for space applications is also considered. Finally, the results obtained to date in the development of GaAs solar cells for applications requiring concentrated sunlight are reviewed, for ...

1984-05-01

116

Development of high-efficiency GaAs solar cells on polycrystalline Ge substrates  

Energy Technology Data Exchange (ETDEWEB)

Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs ...

1996-01-01

117

WASTE TREATMENT AND DISPOSAL PROGRESS REPORT FOR JUNE AND JULY 1962  

Science.gov (United States)

9 9 simulated Purex waste oxides was investigated as a function of Na/sub 2/O, CaO and P/sub 2/O/sub 5/ content. All compositions lost some sulfate at 50 to 100 deg C above the softening point. In generai the volatility decreased with increase of either Na/ sub 2/O or CaO relative to P/sub 2/O/sub 5/, but no simple correlation Was indicated. Softening temperatures were lowered by inc ease in Na/sub 2/O vs CaO. Ceramic solids were obtained but no true glasses. Attempts to produce glasses by addition of varying combinations of Al/sub 2/O/sub 3/, PbO, BaO, and B/sub 2/O/ sub 3/ to simulated Pure x waste plus phosphite were unsuccessful. The use of 0.005 M Na/sub 2/C/O/sub 3/ to precipitate calcium from wastes containing up to 3 ppm of phosphate was demonstrated in four pilot plant runs and produced a decrease in the hardness of the waste leaving the clarifier. An inadvertent Sr/ sup 90/ and Cs/sup 137/ breakthrough ...

1962-12-19

118

YIELDS OF Sr$sup 90$ AND Sr$sup 88$ IN REACTOR NEUTRON FISSION OF Pu$sup 23$$sup 9$  

Science.gov (United States)

A mass spectrometric determination was made of the Sr/sup 88/ and Sr/sup 90/ yieldd from Pu/sup 239/ irradiated by an integral flux of 2.7 x 10/sup 20/ nvt of slow neutrons. (R.V.J.)

1958-01-01

120

The conversion spectrum of Sr"8"8  

International Nuclear Information System (INIS)

... beta spectrometers decay energy-level transitions k conversion l conversion

121

Rb-Sr isotope systematics of granitic soil chronosequence: The importance of biotite weathering  

Energy Technology Data Exchange (ETDEWEB)

The Rb-Sr isotope systematics of bedrock, soil digests, and the cation exchange fraction of soils from a granitic glacial soil chronosequence in the Wind River Mountains, Wyoming, USA, were investigated. Six soil profiles ranging in age from 0.4 to {approximately}300 kyr were studied and revealed that the {sup 87}Sr/{sup 86}Sr ratio of exchangeable strontium in the B-horizons decreased from 0.7947 to 0.7114 with increasing soil age. Soil digests of the same samples showed much smaller variation in {sup 87}Sr/{sup 86}Sr from 0.7272 to 0.7103 and also generally decreased with increasing soil age. Elevation of the {sup 87}Sr/{sup 86}Sr ratios of Sr released by weathering over the soil digest and bedrock values results from the rapid weathering of biotite to form hydrobiotite and vermiculite in the younger soils. Biotite is ...

1997-08-01

124

FFGHIHGGFFFEDCCBBBBBBBCCCCCCCCBBBBAAA@@@??>=<<;:964445544442100 ...  

Science.gov (United States)

... []`ZV\\]`YYYZLQSWWZVafb_SR]VFSV]JJ]_XSXUTXYPV\\VLVUQKX\\\\XMRV\\Z\\ XLJRUVPRXSTLIOTY\\\\ QIZVYXOTQTXT_YVYYZTPONTSTRNTYWSQNQQPPQLSQMPPPIFIMKKPNCHKFEACDINLFEBIKD? ...

125

Determination of the Sr/Ca ratio in bones by XRFA  

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence analysis was used for the determination of Sr/Ca ratio in bones to test the influence of a diet on this ratio. Significant differences were observed for Sr/Ca ratio in bones of various animals. Only small differences in the Ca/Sr ratio were observed for the samples of various prehistoric human bones. (author) 4 refs.; 4 tabs.

1989-11-01

128

Cellular dosimetry: Absorbed fractions for monoenergetic electron and alpha particle sources and S-values for radionuclides uniformly distributed in different cell compartments  

Energy Technology Data Exchange (ETDEWEB)

The importance of cellular dosimetry in both diagnostic and therapeutic nuclear medicine is becoming increasingly recognized. Experimental range-energy relations for electrons and alpha particles, along with derived geometric reduction factors, are used to calculate cellular absorbed fractions for these radiations. The resulting absorbed fractions are employed to calculate cellular S-values for several radionuclides. Cellular absorbed fractions for monoenergetic electron sources with energies ranging from 0.1 keV to 1 MeV, distributed uniformly in the source region, are calculated for several target {l_arrow} source combinations including cell{l_arrow}cell, cell{l_arrow}cell surface, nucleus{l_arrow}nucleus, nucleus {l_arrow}cytoplasm and nucleus {l_arrow}cell surface. Similar data are also provided for monoenergetic alpha particle sources with energies ranging from 3 to 10 MeV. S-values are also conveniently tabulated for {sup 32}P, {sup 35}S, {sup 86}Rb, {sup ...

1994-02-01

129

A PIXE/PIGE study of gold mineralisation in lateritic terrain, Tanami Desert, Australia  

Energy Technology Data Exchange (ETDEWEB)

Proton induced X-ray and {gamma}-ray emission (PIXE/PIGE) have been used to analyze major and trace elements in a suite of 140 core samples from around of the Jim`s Find South gold anomaly in the Tanami desert, located in heavily weathered terrain. Simultaneous analyses were obtained for 30 elements, ranging in atomic number from {sup 3}Li to {sup 90}Th. The method was chosen because of its speed and the wide range of determination, its flexibility, precision and low detection limits. The regolith powder samples were treated by hot aqua regia before making them into pills. The PIXE/PIGE data of the acid insoluble residue give three factor analysis clusters. The first cluster comprises the elements F, Al, K, V, Mn, Fe, Ga, Rb, W and Au and is essentially related to sericitic wallrock alteration. The second cluster consists of Ti, As, Y, Zr, and Nb and is largely related to resistant minerals. The third cluster consists of Na, Ca and Sr and is ...

1997-12-31

130

Magnetic properties of Y_2Cu_2O_5, Y_2BaCuO_5, and Y_2Ba_2O_5 compounds  

International Nuclear Information System (INIS)

The magnetic susceptibility of Y_2Cu_2O_5, Y_2BaCuO_5, and Y_2Ba_2O_5 single-phase compounds in weak magnetic fields (H_0=0.1--20 Oe) and moderate magnetic fields (H_0#=#0.2 Oe it converts into a paramagnetic maximum #chi#(T) which corresponds to an antiferromagnetic transition. In a moderate magnetic field H=500 Oe a normal Curie-Weiss law, #chi##approx##mu#"2_e_f_f (T-#theta#) is observed. At temperatures T=150--300 K, #theta#=38 K and #mu#_e_f_f#approx#2.2 #mu#_B/at. Cu. At T<150 k the temperature dependence of #chi# is described by a simple Curie law with #theta##approx#0. Although the paramagnetic signal is extremely weak, in the Y_2Ba_2O_5 compound the curve of #chi#(T, H_0=100 Oe) for a Y_2ba_2O_5 sample exhibits a slightly smeared maximum at a temperature T#approx#13 K.

1989-01-01

131

Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser  

Energy Technology Data Exchange (ETDEWEB)

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

1994-07-11

132

Wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser  

International Nuclear Information System (INIS)

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

133

GaInP/GaAs tandem concentrator cells  

Energy Technology Data Exchange (ETDEWEB)

We discuss the initial development of a concentrator device based on the GaInP/GaAs monolithic tandem cell structure. The very high one-sun efficiency of this device, coupled with its characteristic low operating current, make this a promising candidate for use under high concentration. Test results for a prototype device are presented. This device achieves an efficiency of 29.5% at a concentration of 102 suns.

1994-06-30

134

Flucton - drop of quark-gluon plasma  

International Nuclear Information System (INIS)

Russian 2003 p. 74 Russian Federation Leksin, GA Inst. Teoreticheskoj

136

Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors  

Energy Technology Data Exchange (ETDEWEB)

By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.

2009-08-15

137

Surface-plasma interactions in GaAs subjected to capacitively coupled RF plasmas  

CERN Document Server

Surface compositional changes in GaAs due to RF plasmas of different gases have been investigated by XPS and etch rates were measured using AFM. Angular Resolved XPS (ARXPS) was also employed for depth analysis of the composition of the surface layers. An important role in this study was determination of oxide thickness using XPS data. The study of surface - plasma interaction was undertaken by correlating results of surface analysis with plasma diagnosis. Different experiments were designed to accurately measure the BEs associated with the Ga 3d, Ga 2p sub 3 sub / sub 2 and LMM peaks using XPS analysis and propose identification in terms of the oxides of GaAs. Along with GaAs wafers, some reference compounds such as metallic Ga and Ga sub 2 O sub 3 powder were used. A separate study aiming the identification of the GaAs ...

2002-01-01

138

lla4728m.112  

Science.gov (United States)

... {yiown{ojkvkoy mvnpfghtnhomnjrirlvnlpsrr|wos njjpbogoggffpihljmfcefdecd ^ba_ ]l gkolihlpnpkimokpojx{|tvwisugm szvqqgsx |wtlq xmrv~~qmrxqj losvl qkrywuoqv ...

139

Vented Bomb Tests to Characterize Propellant and ...  

Science.gov (United States)

... Two types of combustible cartridge cases, post impregnated (PI) and beater additive (B/A) are available for the 120 mm tank gun system. ...

1990-08-01

143

Study of B --> pi l nu and B --> rho l nu decays and determination of |Vub| at BaBar  

CERN Document Server

We report a measurement of the branching fractions for $B^{0} \\rightarrow \\pi^- \\ell^+\

2010-01-01

144

Serum gamma-glutamyltransferase is associated with arterial stiffness in healthy individuals  

British Library Electronic Table of Contents (United Kingdom)

Summary Objective- Gamma-glutamyltransferase (GGT) has been reported to be useful in predicting cardiovascular disease. Arterial stiffness measured by brachial-ankle pulse wave velocity (baPWV) is not only a marker of vascular damage but a significant predictor of cardiovascular events. Gender difference has been reported in the association between GGT and baPWV. We assessed, therefore, the association between GGT and baPWV in a large population and determined whether there was gender difference. Design- This cross-sectional study was conducted at the Asan Medical Centre, Seoul, Republic of Korea. Subjects and measurements- Serum GGT, baPWV and conventional risk factors were measured in 10 988 apparently healthy subjects (7248 men, 3740 women) who participated in a routine health screening...

2011-01-01

145

Role of Obesity in Prostate Cancer Development  

Science.gov (United States)

... estrogen receptor status. Cancer Lett., 253, 291-300. 39. Xin,X ... and resistant mice. Brain Res.Bull., 52, 235-242. 40. Foster,BA ...

2011-04-01

146

IBM-2 calculation of band mixing in "1"3"2Ba  

International Nuclear Information System (INIS)

The band crossing in "1"3"2Ba has been investigated by using the interacting boson model. A broken neutron pair has been coupled to a collective boson core. The boson-fermion interaction hamiltonian contains terms which can transform a boson into a pair of quasiparticles and vice versa. The parameters were partly determined by fitting the collective states of "1"3"2","1"3"4Ba and the yrast states of "1"3"1Ba. The energy backbending has been satisfactorily reproduced. Good agreement of the electromagnetic moments has been reached. The structure of the wave functions has been discussed. (author)

1999-12-04

147

High Temperature Superconducting Compounds  

Science.gov (United States)

... Voltage noise power spectral density measurements as a function of temperature, frequency, current, and magnetic field on DyBa2Cu3O7.x (DBCO ...

1992-11-30

149

Binary kinetics in the Y-Ba-Cu system. 1: Mixed powders  

International Nuclear Information System (INIS)

The kinetics of the reactions between mixed powders of BaCO_3 and CuO, as well as BaCO_3 and Y_2O_3, have been studied using DXRD techniques as a function of particle size, temperature, and CO_2 pressure. Except for initial nucleation phenomena, the reaction rates are governed by shrinking core behavior for BaCO_3 particle sizes between 6 and 33 #mu#m. During the initial stages of the reactions, the surface reaction kinetics are governing, whereas the diffusion of CuO, Y_2O_3, and CO_2 are limiting factors at later stages in the reactions. Quantitative conversion data were used to determine the values of the activation energies and the pertinent diffusivities in these systems.

150

Neutron diffraction study of 5f itinerant antiferromagnet UPtGa{sub 5} and UNiGa{sub 5}  

Energy Technology Data Exchange (ETDEWEB)

Magneto-striction and magnetic form factors in 5f itinerant antiferromagnets UNiGa{sub 5} and UPtGa{sub 5} are studied by means of neutron scattering. Remarkable magneto-striction was observed around T{sub N}, indicating large spin-orbit coupling in the itinerant system. The orbital magnetic moment is found to be strongly suppressed due to the hybridization of uranium 5f with Ga-4p electron.

2003-05-01

151

Spectroscopy of "8"8Sr with the "8"7Sr(n,#gamma#) and "8"7Sr(d,p) reactions  

International Nuclear Information System (INIS)

The #gamma#-ray spectrum emitted after thermal neutron capture in "8"7Sr was studied at the ILL high flux reactor with pair- and intrinsic Ge-spectrometers. 661 transitions were assigned to the reaction "8"7Sr(n,#gamma#)"8"8Sr and 205 of them were placed into a "8"8Sr level scheme of 47 levels. This represents 88% of the observed intensity. The level energies were determined with a precision of better than 22 ppm; the neutron binding energy was determined as 11 112.69 (22) keV. To aid the analysis high resolution particle spectra of the reaction "8"7Sr(d,p)"8"8Sr were measured at 20 MeV deuteron energy with the Munich Q3D spectrometer. 85 states were observed with this reaction. The data helped to establish newly found levels and to differentiate between primary and secondary transitions in the (n,#gamma#) data. The observed level densities and primary ...

152

Photoluminescence properties and local electronic structures of rare earth-activated Sr3AlO4F  

British Library Electronic Table of Contents (United Kingdom)

Photoluminescence properties and local electronic structures of rare earth (Eu^3^+ and Ce^3^+) activated Sr3AlO4F have been studied. X-ray powder diffraction data indicated that the activator ions of Eu^3^+ and Ce^3^+ can be incorporated into the Sr3AlO4F lattice and formed limited solid solutions of Sr3-2xLnxNaxAlO4F (Ln=Eu, Ce) with Na^+ as a charge compensator ion. The local structure around Sr sites was initially explored using Eu-activated Sr3AlO4F as a structural probe. Sr3AlO4F:Eu^3^+ exhibits orange-red emission ranging from 520 to 740nm with a maximum peak at about 619nm mainly originating from the ^5D0->^7FJ (J=0, 1, 2, 3, 4) transitions, indicating that Eu exists mainly in the trivalent state due to a strong oxidative lattice in Sr3AlO4F. Sr3AlO4F:Ce^3^+ shows an unusual long-wa...

2010-01-01

153

Synthesis, crystal structures and spectroscopic properties of RbBaTaS{sub 4} and K{sub 2}BaTa{sub 2}S{sub 11}  

Energy Technology Data Exchange (ETDEWEB)

Single crystals of RbBaTaS{sub 4} (1) and K{sub 2}BaTa{sub 2}S{sub 11} (2) were obtained from the reactions of Ta, with in situ formed fluxes of A{sub 2}S{sub 3} (A = K, Rb), BaS, and S at 500 C. Compound 1 crystallizes in the orthorhombic space group Pnma with a = 9.3286(5), b = 7.0391(4), c = 12.4365(7) A, V = 816.6(1) A{sup 3}, Z = 4. Compound 2 crystallizes in the monoclinic space group P2{sub 1}/c with a = 14.5280(10), b = 12.6347(7), c = 17.5148(12) A, {beta} = 94.744(8) , V = 3203.9(4) A{sup 3}, Z = 4. The structure of RbBaTaS{sub 4} (1) consists of isolated tetrahedral [TaS{sub 4}]{sup 3-} anions and Rb{sup +} and Ba{sup 2+} cations. The Ba{sup 2+} cations are surrounded by nine sulfur atoms forming distorted tricapped trigonal prisms, whereas the Rb{sup +} cations are in an irregular environment of ten sulfur atoms. The structure of K{sub ...

2010-10-15

154

g factors and lifetimes for 2_1"+ states of sup(84,86,88)Sr  

International Nuclear Information System (INIS)

The g factors of the 2_1"+ states in sup(84,86,88)Sr have been deduced using the thin-foil transient field technique with the field calibration of the Rutgers group. The values are g("8"4Sr)= + 0.419(47), g("8"6Sr)= + 0.273(50) and g("8"8Sr)= + 1.15(17). The mean lifetimes of the 2_1"+ states in sup(86,88)Sr were determined by the Doppler-shift attenuation method to be 2.10(22) ps and 0.219(23) ps respectively. The g factor and lifetime results are compared with shell model and interacting boson model predictions. (author).

155

G factors and lifetimes for 2/sub 1//sup +/ states of sup(84,86,88)Sr  

Energy Technology Data Exchange (ETDEWEB)

The g factors of the 2/sub 1//sup +/ states in sup(84,86,88)Sr have been deduced using the thin-foil transient field technique with the field calibration of the Rutgers group. The values are g(/sup 84/Sr)= + 0.419(47), g(/sup 86/Sr)= + 0.273(50) and g(/sup 88/Sr)= + 1.15(17). The mean lifetimes of the 2/sub 1//sup +/ states in sup(86,88)Sr were determined by the Doppler-shift attenuation method to be 2.10(22) ps and 0.219(23) ps respectively. The g factor and lifetime results are compared with shell model and interacting boson model predictions.

1988-01-01

156

New plasma chemistries for dry etching of InGaAlP alloys: BI{sub 3} and BBr{sub 3}  

Energy Technology Data Exchange (ETDEWEB)

Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI{sub 3} or BBr{sub 3} discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates ({gt}6000thinsp{Angstrom}thinspmin{sup {minus}1}) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI{sub 3} or BBr{sub 3} content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO{sub 2} and SiN{sub x} of {ge}8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and ...

1998-09-01

157

New plasma chemistries for dry etching of InGaAlP alloys: BI_3 and BBr_3  

International Nuclear Information System (INIS)

Inductively coupled plasma etching of InGaP, AlInP and AlGaP in BI_3 or BBr_3 discharges was investigated as a function of source power, dc chuck bias and plasma composition. InGaP etches at the fastest rates (>6000 Angstrom min"-"1) in both chemistries, followed by AlGaP. It is found that AlInP provides an excellent etch stop for the other two materials in both mixtures. The InGaP surface morphology improves with increasing BI_3 or BBr_3 content, and with increasing dc chuck bias. The etched features for this material are highly anisotropic. Etch selectivities for InGaP over SiO_2 and SiN_x of #>=#8 are obtained in both plasma chemistries, and there is no etch incubation time with either mixture, indicating that both can scavenge the native oxide on InGaP, AlGaP and AlInP. copyright 1998 American Vacuum Society.

1998-09-01

158

Application of DLTS method to investigation of deep defect centers in epitaxial layers of multicomponent A"I"I"I-B"V compounds  

International Nuclear Information System (INIS)

The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range ...

159

Development of an IR-transparent, inverted-grown, thin-film, Al[sub 0. 34]Ga[sub 0. 66]As/GaAs cascade solar cell  

Energy Technology Data Exchange (ETDEWEB)

Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a ...

1992-12-01

160

RMIT - Zahra, Dr. Louiseann  

Wastenet

... Zahra-Kingrsquo;s practice utilizes a range of media including textiles, metal casting, glass, sound, film and photography. Qualifications English Major from BA (Social Science) 1991; BA(Visual Arts) 1991; Grad. Dip. (Fine Art - Printmaking) 1993; Candidate for MFA 2001; Ph.D 2005. School of Art Research Clusters Art and Environmental Sustainability Art, ...

161

Magnetic and transport properties of Ba_2Co_9O_1_4 and Ba_1_._9A_0_._1Co_9O_1_4 (A=La or Na)  

International Nuclear Information System (INIS)

The valence and spin-state distributions of Co ions and the complex structure of antiferromagnetic Ba_2Co_9O_1_4 have led to the suggestion that doped Ba_2Co_9O_1_4 compounds may be good thermoelectric materials. We have checked this suggestion by measuring the magnetic properties as well as the transport properties of nominal Ba_1_._9A_0_._1Co_9O_1_4 (A=La or Na). We show that although all compounds are indicated to be single phase by powder X-ray diffraction analysis, they are all p-type polaronic conductors with low mobile-hole concentrations. Magnetic-susceptibility data of the parent and La-doped compounds give evidence of a second magnetic phase with ferromagnetic order setting in below 215 K; but this second phase is not seen in the Na-doped sample. We conclude that the structure is stabilized by oxidation and that cation exolution from the Ba_2Co_9O_1_4 structure creates cation vacancies that ...

2010-11-01

162

Loss of light charged particles by nuclear interactions in BaF[sub 2] crystals  

Energy Technology Data Exchange (ETDEWEB)

The nuclear interaction probability of light charged particles in BaF[sub 2] crystals has been studied as a function of the incident particle energy. Light charged particles were identified in charge and mass by measuring their magnetic rigidity and their time-of-flight. The percentage of particles undergoing nuclear interactions has been measured for particles of charge from Z=1 to Z=6 and the experimental data are compared with the results of a model calculation. (orig.)

1993-07-15

163

Determination of Y, Ba and Cu in superconductor films by x-ray fluorescence analysis  

International Nuclear Information System (INIS)

Radionuclide x-ray fluorescence analysis was used for the determination of Y, Ba and Cu in thin high-temperature superconducting films. Atomic emission ICP spectrometry was used to estimate the precision and accuracy of analytical results. Reasonable agreement between both methods was obtained when a polynomial calibration curve was applied. (author) 4 refs.; 4 tabs.

1994-06-01

164

Room-temperature continuous-wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor deposition  

Science.gov (United States)

Room-temperature continuous-wave (cw) operation of a GaInP/AlGaInP multiquantum well (MQW) laser was achieved for the first time. The threshold current was 70 mA at 22 /sup 0/C for a device with an 8-..mu..m-wide and a 250-..mu..m-long planar stripe. The emission wavelength was 668 nm. The characteristic temperature T/sub 0/ was 138 K under cw operation. The wafer with the MQW structure composed of 100-A-thick GaInP wells and 40-A-thick AlGaInP barrier layers was grown by atmospheric pressure metalorganic chemical vapor deposition.

1987-04-20

165

Phase formation sequence in the Pd-GaAs system  

Energy Technology Data Exchange (ETDEWEB)

The morphological aspects of ternary phase formation during the Pd-GaAs reaction have been studied by application of transmission electron microscopy (TEM) and Rutherford backscattering (RBS) techniques. The TEM images show that the first product phase, ''phase I'', forms during deposition of Pd onto (100) GaAs and exhibits the preferred orientation (0001)/sub I/ approx. // (01 anti 1)/sub GaAs/. In the presence of unreacted Pd, the second phase, ''phase II'', nucleates at large-angle grain boundaries in the phase I film as the annealing temperature increases above approx.250C. Energy dispersive analysis of x-rays and RBS suggest the nominal compositions Pd3GaAs and Pd4GaAs for phases I and II, respectively.

1985-12-01

166

Optoelectronic devices grown by metallo-organic chemical vapor deposition  

International Nuclear Information System (INIS)

The metallo-organic chemical vapor deposition (MOCVD) process has been used with great success to grow AlGaAs-GaAs and InGaAsP-InGaAs-InP heterostructure materials for electronic and optoelectronic applications. Devices fabricated from Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by MOCVD include bipolar transistors, field-effect transistors (FETs), high-mobility (or modulation-doped) FETs, large-area high-efficiency solar cells, low-threshold lasers, high-power lasers, quantum-well lasers, and visible lasers. The state of the art for the MOCFD growth of optoelectronic devices is reviewed in this paper, and some comments are made regarding future trends in the growth of these materials by MOCVD.

167

MOCVD growth of GaAs solar cells on silicon substrates  

Energy Technology Data Exchange (ETDEWEB)

This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

1992-12-01

168

GaP/Al/sub x/Ga/sub 1-x/P heterojunction transistors for high-temperature electronic applications  

Science.gov (United States)

Useful bipolar transistor action over the temperature range from -195 to 550 /sup 0/C has been demonstrated for heterojunction bipolar transistors in the GaP/AlGaP chemical system. This represents the highest temperature at which useful bipolar solid-state transistor action has ever been demonstrated in any material. Improvements in the materials technology and in the understanding of device characteristics at high temperatures were essential to the successful fabrication of these devices. These results demonstrate that the GaP/AlGaP heterojunction system is an excellent technology for active electronic components operated at high temperatures.

1983-10-01

169

GaAs pattern etching with little damage by a combination of Ga"+focused-ion-beam irradiation and subsequent Cl_2 gas etching  

International Nuclear Information System (INIS)

Pattern formation on GaAs by Ga"+ focused-ion-beam (FIB) irradiation and subsequent Cl_2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl_2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga"+ FIB-assisted Cl_2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga"+-ion doses.

170

GaAs pattern etching with little damage by a combination of Ga sup + focused-ion-beam irradiation and subsequent Cl sub 2 gas etching  

Energy Technology Data Exchange (ETDEWEB)

Pattern formation on GaAs by Ga{sup +} focused-ion-beam (FIB) irradiation and subsequent Cl{sub 2} gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl{sub 2} gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga{sup +} FIB-assisted Cl{sub 2} etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga{sup +}-ion doses.

1990-12-15

171

Formation of defects in epitaxial heterostructures and multicomponent solid solutions of semiconductor compounds  

International Nuclear Information System (INIS)

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

172

Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode  

International Nuclear Information System (INIS)

The band offsets and subband levels in a double quantum well layer for a 660 nm-Ga_0_._4In_0_._6P/(Al_0_._5Ga_0_._5)_0_._5In_0_._5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical calculation of the Schroedinger equation for the layer structure by varying the conduction band offset and compared with the measured photoreflectance spectra. The conduction band offset ratio is determined to be 0.5+0.03. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

2009-06-01

173

Width of the 1.836-MeV level in "8"8Sr  

International Nuclear Information System (INIS)

Using bremsstrahlung, the resonance fluorescence yield has been measured for the 1.836-MeV 2"+_1 level in "8"8Sr. The observed yield corresponds to a level width GAMMA = 2.94 +- 0.15 meV.

174

Study on the angular. gamma gamma. -correlations for nuclei of Sr even-even isotopes  

Energy Technology Data Exchange (ETDEWEB)

The angular ..gamma gamma..-correlations for nuclei of Sr even-even isotopes with A=82, 84, 86, 88 were measured. Multipole structurs of ..gamma..-transtion series and th coefficients multipole mixing were determined.

1984-05-01

175

Study on the angular #gamma##gamma#-correlations for nuclei of Sr even-even isotopes  

International Nuclear Information System (INIS)

The angular #gamma##gamma#-correlations for nuclei of Sr even-even isotopes with a=8 82, 84, 86, 88 were measured. Multipole structurs of #gamma#-transtion series and th coefficients multipole mixing were determined.

1983-04-01

176

Excitations and electromagnetic transitions for /sup 88/Sr and /sup 90/Zr  

Energy Technology Data Exchange (ETDEWEB)

In this letter we report the outcome for the microscopic approach for the semi-magic nuclei /sup 88/Sr and /sup 90/Zr. For comparison, we have also treated the semi-phenomenological version for the Migdal and SDI force.

1981-10-10

177

Excitations and electromagnetic transitions for /sup 88/Sr and /sup 90/Zr  

Energy Technology Data Exchange (ETDEWEB)

An application of the renormalized random phase approximation to nuclear structure is presented for the semi-magic nuclei /sup 88/Sr and /sup 90/Zr. It is reported the outcome for the microscopic approach in comparison with the semiphenomenological version for the particle-hole forces.

1981-10-10

178

Compound elastic cross sections in the isobaric analog resonances /sup 88/Sr(p,p/sub 0/) at 5. 06 MeV and /sup 86/Sr(p,p/sub 0/) at 6. 02 MeV  

Energy Technology Data Exchange (ETDEWEB)

We have measured the K-shell ionization probability Psub(K) across the isobaric analog resonances in the elastic channel of the reactions /sup 88/Sr(p, p/sub 0/)/sup 88/Sr at 5.06 MeV and /sup 86/Sr(p, p/sub 0/)/sup 86/Sr at 6.02 MeV. The dependence of Psub(K) on the beam energy for two scattering angles 90/sup 0/ and 155/sup 0/ is analysed in the framework of the theory developed by Anholt et al. taking into account the effect of compound-nucleus scattering. A compound elastic cross section (dsigma/d..cap omega..)sub(CE)=40+-10 mb/se at the peak of the resonance is deduced in the reaction /sup 88/Sr+p at 5.06 MeV, while the experimental results agree with a negligible value of (dsigma/d..cap omega..)sub(CE) for the resonance in /sup 86/Sr+p at 6.02 MeV.

1983-10-27

179

Compound elastic cross sections in the isobaric analog resonances "8"8Sr(p,p_0) at 5.06 MeV and "8"6Sr(p,p_0) at 6.02 MeV  

International Nuclear Information System (INIS)

We have measured the K-shell ionization probability Psub(K) across the isobaric analog resonances in the elastic channel of the reactions "8"8Sr(p, p_0)"8"8Sr at 5.06 MeV and "8"6Sr(p, p_0)"8"6Sr at 6.02 MeV. The dependence of Psub(K) on the beam energy for two scattering angles 90"0 and 155"0 is analysed in the framework of the theory developed by Anholt et al. taking into account the effect of compound-nucleus scattering. A compound elastic cross section (dsigma/d#OMEGA#)sub(CE)=40+-10 mb/se at the peak of the resonance is deduced in the reaction "8"8Sr+p at 5.06 MeV, while the experimental results agree with a negligible value of (dsigma/d#OMEGA#)sub(CE) for the resonance in "8"6Sr+p at 6.02 MeV. (orig.).

180

Born-Oppenheimer breakdown effects and hyperfine structure in the rotational spectrum of strontium monosulfide, SrS  

Energy Technology Data Exchange (ETDEWEB)

A newly constructed Fourier transform microwave spectrometer has been used to record the pure rotational spectra of four isotopomers of SrS ({sup 88}Sr{sup 32}S, {sup 87}Sr{sup 32}S, {sup 86}Sr{sup 32}S, and {sup 88}Sr{sup 34}S) between 6 and 26 GHz. The molecules were produced by reacting laser ablated strontium with carbonyl sulfide (0.1% in argon). Pure rotational transitions in the ground, first and second vibrational states have been observed. The data set has enabled a multi-isotopomer fit. Born-Oppenheimer breakdown terms for both atoms have been determined. The {sup 87}Sr nuclear quadrupole coupling constant in {sup 87}Sr{sup 32}S has been determined for the first time.

2007-12-06

181

Two- and three-phonon states in "8"8Sr  

International Nuclear Information System (INIS)

... de-excitation excited states gamma radiation inelastic scattering mev range

182

The structure of the 4.743 MeV state in "8"8Sr  

International Nuclear Information System (INIS)

... states gamma radiation mev range 01-10 photonuclear reactions polarization

186

Scintillation converter screen investigation for real-time neutron radiography  

International Nuclear Information System (INIS)

(1980). United States Panhuise, VE Bull, SR Seydel, JA Univ of Missouri-

1980-11-21

188

Multistep contributions in "8"8Sr(h,t)"8"8Y  

International Nuclear Information System (INIS)

... mixing coupled channel theory differential cross sections excited states helium

189

Magnetic and electrical properties of single crystalline Formula Not Shown  

British Library Electronic Table of Contents (United Kingdom)

We have successfully grown single crystalline Formula Not Shown with the range of Formula Not Shown using the floating-zone method. All compounds show orthorhombic symmetry in this substitution range, but the difference between lattice constants a and b decreases with increasing Sr concentration and becomes almost zero at Formula Not Shown . Characteristic temperatures, which correspond to antiferromagnetic ordering and structural transition, decrease with increasing Sr concentration. The value of the magnetic susceptibility below 30K increases with increasing Sr concentration. The temperature dependence of the electrical resistivity revealed that Sr substitution significantly suppresses the highly anisotropic electric structure of Formula Not Shown .

2008-01-01

190

Lifetime of 2.734 mev Sr"8"8 level  

International Nuclear Information System (INIS)

... range 01-10 nuclei photons radiation sources recoils resonance scattering

191

Investigation of "8"8Sr by (e,e') and (p,p') reactions  

International Nuclear Information System (INIS)

... bcs theory electron reactions excited states form factors inelastic scattering

193

Pteromalus puparum venom impairs host cellular immune responses by decreasing expression of its scavenger receptor gene.  

Science.gov (United States)

Insect host/parasitoid interactions are co-evolved systems in which host defenses are balanced by parasitoid mechanisms to disable or hide from host immune effectors. Although there is a rich literature on these systems, parasitoid immune-disabling mechanisms have not been fully elucidated. Here we report on a newly discovered immune-disabling mechanism in the Pieris rapae/Pteromalus puparum host/parasitoid system. Because venom injections and parasitization suppresses host phagocytosis, we turned attention to the P. rapae scavenger receptor (Pr-SR), posing the hypothesis that P. puparum venom suppresses expression of the host Pr-SR gene. To test our hypothesis, we cloned a full-length cDNA of the Pr-SR. Multiple sequences alignment showed the deduced amino acid sequence of Pr-SR is similar to scavenger receptors of other lepidopterans. Bacterial and bead injections induced Pr-SR ...

2011-07-22

194

High-spin structure of odd $^{71-81}$Ga isotopes with shell model  

CERN Document Server

The recently measured experimental data of Argonne National Laboratory for high-spin states in neutron-rich $^{71,73,75,77}$Ga isotopes have been interpreted in the framework of large-scale shell model. Calculations have been performed in $f_{5/2}pg_{9/2}$ model space with two recent effective shell model interactions, JUN45 and jj44b. We also predict high-spin states for $^{79,81}$Ga, where very little is known experimentally. The calculated results show that existence of band structure built on top of the 3/2$^-$, 5/2$^-$ and 9/2$^+$ levels in $^{71-77}$Ga. The collective structure reflected in experimental data is not well reproduced in calculated values. The calculated positive parity states in $^{71,73,75}$Ga are higher in energy in comparison to experimental finding, while for $^{77,79}$Ga, the positive parity states are in better agreement. Both the interactions predict, ...

2011-01-01

195

GaP/Al/sub x/Ga/sub 1-x/P heterojunction bipolar junction transistor for high-temperature electronic applications  

Energy Technology Data Exchange (ETDEWEB)

Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.

1982-01-01

196

Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study  

UK PubMed Central (United Kingdom)

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

197

Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures  

Energy Technology Data Exchange (ETDEWEB)

The authors report a two-temperature RF bias stress test on nominal 1.2 W 7.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTF`s of 2020 and 1340 hours were obtained at Tj = 218{degrees}C and 245{degrees}C, respectively, under nominal input bias. An activation energy of 0.42 eV is estimated, consistent with published results for similar devices under DC bias stress.

1995-12-31

200

InP-quantum dots in AlGaInP  

International Nuclear Information System (INIS)

... dpg-tagungen.de Dresden (Germany) 27-31 Mar 2006 0420-0195 VDPEAZ

2006-03-27

201

High efficiency GaInP/GaAs tandem solar cells  

Energy Technology Data Exchange (ETDEWEB)

We report on multijunction GaInP/GaAs photovoltaic cells with total-area efficiencies of 29.5% at one-sun concentration and air mass (AM) 1.5 global and 25.7% one-sun, AM0. These values represent the highest efficiencies achieved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed: the grid design, front surface passivation of the top cell, and bottom surface passivation of both cells. Aspects of cell design related to its operation under different solar spectra and under concentration are also discussed.

1994-06-30

202

GaInP/GaAs monolithic tandem concentrator cells  

Energy Technology Data Exchange (ETDEWEB)

This paper discusses design considerations for the recently introduced GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140--180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. The authors focus on the issues of grid design, top-cell thickness, and antireflectance coat. They also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices.

1994-12-31

203

Efficiency of silicon and GaAs concentrator solar cells operated inside integrating cavity receivers  

Energy Technology Data Exchange (ETDEWEB)

The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

1991-06-01

205

0.6 #mu#m-band AlGaInP visible laser diodes  

International Nuclear Information System (INIS)

Highly reliable, practical 0.6 #mu#m-band AlGaInP visible laser diodes (LDs), using a GaInP active layer, are described. Over 10,000 hour stable operation at 50 degrees C has been achieved for 3mW light output. Characteristics for visible LDs with an AlGaInP active layer or a multi-quantum-well active layer are also presented.

1988-11-02

207

Wet chemical etch solutions for Al{sub x}Ga{sub 1{minus}x}P  

Science.gov (United States)

Heterostructures based on AlGaInP alloy compounds are very attractive for visible semiconductor lasers, heterojunction bipolar transistors (HBTs), and high-electron-mobility transistors (HEMTs) lattice matched to GaAs substrates. Several wet etching solutions for AlGaP of different compositions have been studied. Al{sub 0.5}Ga{sub 0.5}P is found to etch in HF, H{sub 3}PO{sub 4}, hyphosphorous acid (HOPH{sub 2}:O), HCl, KOH, and 1% Br{sub 2}-methanol (MeOH). Etching of Al{sub 0.5}Ga{sub 0.5}P in HCl is reaction limited with an activation energy of {approximately}54.4 kJ/mol. At fixed conditions, the etch rates of Al{sub x}Ga{sub 1{minus}x}P vary exponentially with x in HF and HCl, while in 1% Br{sub 2}-MeOH and mixtures of HCl and HNO{sub 3} the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for ...

1996-01-01

208

Spectroscopic studies of the Sm_3Ga_5O_1_2 monocrystals  

International Nuclear Information System (INIS)

The fluorescence, absorption, infrared and Raman spectra of Sm_3Ga_5O_1_2 have been investigated. The energy-level schemes in the energy range 3000-16000 cm"-"1 have been determined. The number and symmetries of the Sm_3Ga_5O_1_2 crystal normal mode have been obtained by the molecular site group analysis and their comparison with the experiment has been made.

209

Photoresponsivity of ultraviolet detectors based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloys  

Energy Technology Data Exchange (ETDEWEB)

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 {mu}m In{sub x}Al{sub y}Ga{sub 1-x-y}N alloy grown on 0.5-1.0 {mu}m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In{sub x}Al{sub y}Ga{sub 1-x-y}N detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In{sub x}Al{sub y}Ga{sub 1-x-y}N quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al ...

2000-08-07

210

Photoresponsivity of ultraviolet detectors based on In_xAl_yGa_1_-_x_-_yN quaternary alloys  

International Nuclear Information System (INIS)

We describe the growth, fabrication, and characterization of an ultraviolet (UV) photoconductive detector based on In_xAl_yGa_1_-_x_-_yN quaternary alloy that is lattice matched to GaN. The detector consisted of 0.1 #mu#m In_xAl_yGa_1_-_x_-_yN alloy grown on 0.5-1.0 #mu#m GaN epilayer by metalorganic chemical vapor deposition. With varying indium concentration, the cut-off wavelength of the In_xAl_yGa_1_-_x_-_yN detectors could be varied to the deep UV range. The most important and intriguing result is that the responsivity of the In_xAl_yGa_1_-_x_-_yN quaternary alloy exceeded that of AlGaN alloy of a comparable cutoff wavelength by a factor of five. This makes the nitride quaternary alloy very important material for solar blind UV detectors applications particularly in the deep UV range where Al rich AlGaN alloys have ...

2000-08-07

211

Metabolism of Gibberellin A12 and A12-Aldehyde in Developing Seeds of Pisum sativum L. 1  

UK PubMed Central (United Kingdom)

Metabolism of [14C]gibberellin (GA) A12 (GA12) and [14C]gibberellin A12-aldehyde (GA12-aldehyde) was examined in cotyledons and seed...Full Text Available

1991-09-01

212

Radiostrontium in milk and tap water  

International Nuclear Information System (INIS)

Analysis of Sr-90 in milk and tap water has been conducted in New York City since 1954. The milk sample analyzed is a monthly composite of pasteurized milk purchased daily at retail stores. The monthly Sr-90 to calcium ratios for New York City since the inception of the sampling progam in 1954 through 1981 are tabulated. Samples of New York City tap water are taken daily so that by the end of the month, approximately 100 liters have been collected. Data on Sr-90 since the inception of the program are presented. The available Cs-137 data expressed as the Cs-137 to Sr-90 ratio are given. A graphical presentation of the New York City Sr-90 data is also shown.

1982-05-01

213

Chemistry of strontium  

International Nuclear Information System (INIS)

This paper describes stable strontium as composed of four stable isotopes ( Sr 88, Sr 87, Sr 86, and Sr 84), of which Sr 88 contributes more than 82% to its composition. Strontium exists in three crystalline, plymorphic forms; face-centered cubic alpha form, hexagonal beta form and body-centered cubic gamma form. Strontium occupies in many physicochemical aspects an intermediate position between calcium and barium, as does the solubility of strontium salts. As a result of its oxidation potential, strontium readily forms oxides, halides, and sulfide. The author proposes that the slight discrimination against strontium incorporation into bony tissues may be due to the difference in ionic potential (14%) between strontium and calcium. Ionic potential is an indicator of the strength of ionic bonds: strontium has a smaller ratio of ionic charge to ionic radius when compared with calcium.

214

$sup 86$ $sup 88$Sr(d,$sup 3$He)$sup 85$ $sup 87$Rb reactions and a possible Z = 38 magic number  

Science.gov (United States)

The /sup 86,88/Sr(d, /sup 3/He)/sup 85,87/Rb reactions were studied at energy of 28 MeV and angular distributions were obtained for all observed states. Spectroseopic factors were extracted from distorted-wave Born-approximation calculations of the cross sections. These spectroacopic factors, and those from the /sup 86,88/Sr(/sup 3/He, d)/sup 87,89/ Y reactions, mixing in the ground state of /sup 88/Sr is inferred. The two g/sub (9/2) neutro n ton orbital populations in /sup 86/Sr. (auth)

1973-10-01

215

Effect of milling process on the core-shell structures and dielectric properties of fine-grained BaTiO3-based X7R ceramic materials  

British Library Electronic Table of Contents (United Kingdom)

Fine-grained BaTiO3-based X7R ceramic materials were prepared and the effects of milling process on the core-shell structures and dielectric properties were investigated using scanning electron microscope, transmission electron microscope, and energy dispersive spectroscopy (EDS). As the milling time extends, the dielectric constant of the ceramics increases, whereas the temperature coefficient of capacitance at 125degreeC drops quickly. The changes in dielectric properties are considered relevant to the microstructure evolution caused by the milling process. Defects on the surface of BaTiO3 particles increase because of the effects of milling process, which will make it easier for additives to diffuse into the interior grains. As the milling time increases, the shell region gets thicker a...

2009-01-01

216

Preparation of multication #alpha#-SiAlON containing strontium  

International Nuclear Information System (INIS)

The possibility of having Sr as an interstitial metal cation in #alpha#-SiAlON has been investigated in two systems: a single-cation system (Si_3N_4-SrO-AlN) and a multication system (Si_3N_4-(Y_2O_3/SrO/CaO)-AlN). It was found that Sr alone does not form #alpha#-SiAlON and that Sr could only be accommodated in #alpha#-SiAlON in conjunction with Y and Ca. The Sr content of #alpha#-SiAlON increased as the total content of (Y + Ca) increased and appeared to reach a limit at 0.5 at.%, or 0.15 atom per #alpha#-SiAlON. Unexpectedly, some of the #alpha#-SiAlON that contained (Sr + Y + Ca) was present as laths or fibers with the c-axis perpendicular to the hot-press direction.

217

Point defects in dilute nitride III-N-As and III-N-P  

International Nuclear Information System (INIS)

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As_G_a antisites and Ga_i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides.

2006-04-01

218

Deep-level defects and numerical simulation of radiation damage in GaAs solar cells  

Energy Technology Data Exchange (ETDEWEB)

A review of the deep-level defects observed in both electron- and proton-irradiated GaAs solar cells is presented. Studies of the effects of periodic and continuous thermal annealing on the radiation-induced electron and hole traps and the recombination parameters in GaAs solar cells were made for a wide range of electron and proton energies, fluence, annealing temperature and annealing time. A refined model for numerical simulations of the displacement damage was developed for computing the defect density and the cell parameters in the electron- and proton-irradiated GaAs solar cells. Excellent agreement was obtained between the calculated values and the experimental data for the proton-irradiated GaAs solar cells. (orig.).

1991-09-01

219

Antiferromagnetic ordering of defects in GaAs  

Energy Technology Data Exchange (ETDEWEB)

The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

1992-10-15

220

Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs  

Energy Technology Data Exchange (ETDEWEB)

The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The ...

1999-02-23

221

Evidence of network demixing in GeS2-Ga2S3 chalcogenide glasses: A phase transformation study  

International Nuclear Information System (INIS)

The information of phase transformation is attained by in situ XRD experiments leading to the knowledge of topological threshold in GeS2-Ga2S3 glasses. The turning point of phase transformation behavior is demonstrated to be glasses containing 14-15 mol% Ga2S3. To interpret it a network demixing model is further improved and proposed for the structure of these ternary or quasi-binary chalcogenide glasses. For the nearest-neighbor coordination environment of glass with a transitional composition of 85.7 mol% (6/7) GeS2.14.3 mol% (1/7) Ga2S3, six-coordinated [S3Ga-X-GaS3] units (X=S or None) are well isolated by the [GeS4] structures, which contributes to the decreasing of precipitation of Ga2S3 crystals in (100-x)GeS2-xGa2S3 (x?14.3) glasses corresponding to the experimental evidence of the phase transformation behavior. This scenario of intermediate-range ...

2011-03-01

222

Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds.  

Science.gov (United States)

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate ...

2011-05-17

223

MOCVD-grown Al /SUB 0. 5/ In /SUB 0. 5/ P-Ga /SUB 0. 5/ In /SUB 0. 5/ P double heterostructure lasers optically pumped at 90 K  

Energy Technology Data Exchange (ETDEWEB)

Undoped Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwiched Ga /SUB 0.5/ In /SUB 0.5/ P-layer, than that from a single epitaxially-grown Ga /SUB 0.5/ In /SUB 0.5/ P-layer on (100) GaAs, indicating that high-quality Al /SUB 0.5/ In /SUB 0.5/ P-Ga /SUB 0.5/ In /SUB 0.5/ P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 A.

1982-12-01

224

InAlGaP vertical cavity surface emitting lasers (VCSELs): Processing and performance  

Energy Technology Data Exchange (ETDEWEB)

(Al{sub y}Ga{sub 1{minus}y}){sup 1{minus}x}In{sub x}P semiconductor alloys lattice-matched to GaAs are widely used in visible optoelectronic devices. One of the most recent developments in this area is the AlGaInP-based red vertical cavity surface emitting laser (VCSEL). These lasers, which employ AlGaInP active regions and AlGaAs distributed Bragg reflectors (DBRs), have demonstrated continuous-wave (CW) lasing over the 630--690 nm region of the spectrum. Applications for these lasers include plastic fiber data communications, laser printing and bar code scanning. In this paper, the authors present an overview of recent developments in the processing and performance of AlGaInP based VCSELs. This overview will include a review of the general heterostructure designs that have been employed, as well as the performance of lasers fabricated by both ion implantation ...

1997-06-01

225

Al[sub 0. 3]Ga[sub 0. 7]As/GaAs heterojunction tunnel diode for tandem solar cell applications  

Energy Technology Data Exchange (ETDEWEB)

A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

1994-06-30

226

UTK-EERC ~ Staff - Jack N. Barkenbus  

Wastenet

... Tschantz, Performance Evaluation of Constructed Urban Stormwater Detention Ponds in the Knoxville Area, proceedings and presentation to International Conference on Decision Making in Urban and Civil Engineering, Lyon, France, November 22, 2000. B.A. Tschanz, Current Problems, Practices, and ...

227

Theoretical study on the effects of oxygen doping on the lithium ion conductive perovskite-type manganese fluoride of KxBa(1-x)/2MnF3  

British Library Electronic Table of Contents (United Kingdom)

Previously, we demonstrated that the lithium ion conduction in the perovskite-type manganese fluoride is attributed to counter cation-site vacancy mechanism. The divalent counter cation-doped KxBa(1-x)/2MnF3 was theoretically predicted as the lithium ion conductor in the perovskite-type manganese fluoride. In this study, we considered the oxygen doping for KxBa(1-x)/2MnF3 to realize the higher lithium ion conductivity. It is because lithium ion forms the stronger ionic bond with the doped oxygen anion. The hybrid-DFT calculations were performed to investigate the lithium ion conduction in the oxygen-doped KxBa(1-x)/2MnF3. The calculation results were discussed from the viewpoints of the potential energy curve, electron densities, and charge and spin densities. The effect of the lithium ion...

2009-01-01

228

The Specificity of Innate Immune Responses Is Enforced by Repression of Interferon Response Elements by NF-?B p50  

UK PubMed Central (United Kingdom)

The specific binding of transcription factors to cognate sequence elements is thought to be critical for the generation of specific gene expression programs. Members of the nuclear factor ba;B...Full Text Available

229

The Receptor Tyrosine Kinase FGFR4 Negatively Regulates NF-kappaB Signaling  

UK PubMed Central (United Kingdom)

BackgroundNFba;B signaling is of paramount importance in the regulation of apoptosis, proliferation, and inflammatory responses during human development and homeostasis, as...Full Text Available

230

Study on the separation characteristics of tritiated water vapor adsorption.  

Science.gov (United States)

In order to reduce the air concentration of (sup 3)H in the reactor buiIding of Wolsung Heavy Water Reactor, a computer code for estimation of adsorption behavior was programmed based on an equation derived for analysis of water vapor adsorption, and a ba...

1991-01-01

231

Physical properties of high-temperature superconductors  

International Nuclear Information System (INIS)

The authors have measured the magnetization of single-phase 90-K superconductors, GdBa_2Cu_3O/sub 6+#delta#/, EuBa_2Cu_3O/sub 6+#delta#/, and SmBa_2Cu_3O/sub 6+#delta#/ with a SQUID magnetometer. They have shown that, in the superconducting state, each magnetization-field curve exhibits a maximum at #approx# 100 G, followed by a linear increase of the magnetization with a slope only approximately one-fifth of the slope for a field smaller than 50 G. They have also investigated the effect of #gamma#-irradiation on YBa_2Cu_3O/sub 6+#delta#/, SmBa_2Cu_3O/sub 6+#delta#/, and have found that the radiation damage results in the appearance of a tail in the superconducting transition. They have also shown that the normal resistance decreases with increasing radiation exposure up to a dose of 10 Mrad.

232

NF-?B and cancer: how intimate is this relationship  

UK PubMed Central (United Kingdom)

NF-ba;B, a transcription factor first discovered in 1986, is now known to be closely connected to the process of tumorogenesis based on a multiplicity of evidence. (1)...Full Text Available

2010-03-01

233

Measurements of the CKM angle $\\gamma/\\phi_{3}$ at B-factories  

CERN Document Server

The CKM angle $\\gamma/\\phi_{3}$ had been measured by two B-factories, the PEPII collider for the BaBar experiment and the KEKB collider for the Belle experiments. The present paper reports recent progress in $\\gamma/\\phi_{3}$.

2011-01-01

234

Intermediates of Salicylic Acid Biosynthesis in Tobacco1  

UK PubMed Central (United Kingdom)

Salicylic acid (SA) is an important component of systemic-acquired resistance in plants. It is synthesized from benzoic acid (BA) as part of the phenylpropanoid pathway. Benzaldehyde (BD), a potential...Full Text Available

1998-10-01

235

Electrical Discharge Machining (EDM) Gun Barrel Bore and Rifling Feasibility Study.  

Science.gov (United States)

A 12-month program was conducted to advance the technology of the Electrical Discharge Machining (EDM) process to be applicable to the stringent requirements of gun barrel boring and rifling. The type of barrels employed in the test were .220 swift gun ba...

1974-01-01

236

Effects of ATRA combined with citrus and ginger-derived compounds in human SCC xenografts  

UK PubMed Central (United Kingdom)

BackgroundNF-ba;B is a survival signaling transcription factor complex involved in the malignant phenotype of many cancers, including squamous cell carcinomas (SCC). The citrus...Full Text Available

237

Effect of the final annealing of cold rolled stainless steels sheets on the electronic properties and pit nucleation resistance of passive films  

Energy Technology Data Exchange (ETDEWEB)

Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit ...

2008-02-15

238

Effect of the final annealing of cold rolled stainless steels sheets on the electronic properties and pit nucleation resistance of passive films  

International Nuclear Information System (INIS)

Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit ...

2008-02-01

239

Dynamic Chromatin Localization of Sirt6 Shapes Stress- and Aging-Related Transcriptional Networks  

UK PubMed Central (United Kingdom)

The sirtuin Sirt6 is a NAD-dependent histone deacetylase that is implicated in gene regulation and lifespan control. Sirt6 can interact with the stress-responsive transcription factor NF-ba;B...Full Text Available

2011-06-01

240

Diurnal Variations of Mouse Plasma and Hepatic Bile Acid Concentrations as well as Expression of Biosynthetic Enzymes and Transporters  

UK PubMed Central (United Kingdom)

BackgroundDiurnal fluctuation of bile acid (BA) concentrations in the enterohepatic system of mammals has been known for a long time. Recently, BAs have been recognized as signaling...Full Text Available

241

Coordinated Increased Expression of Cyclooxygenase2 and Nuclear Factor ?B Is a Steady Feature of Urinary Bladder Carcinogenesis  

UK PubMed Central (United Kingdom)

Objectives. The inescapable relationship between chronic inflammation and carcinogenesis has long been established. Our objective was to investigate COX-2 and NF-ba;B...Full Text Available

2010-01-01

242

Antidepressant-Like Effects of ?-Opioid Receptor Antagonists in Wistar Kyoto Rats  

UK PubMed Central (United Kingdom)

The Wistar Kyoto (WKY) rat strain is a putative genetic model of comorbid depression and anxiety. Previous research showing increased ba;-opioid receptor (KOR)...Full Text Available

2010-02-01

243

Effect of urea on the mechanical strength of wood-plastic composites  

Energy Technology Data Exchange (ETDEWEB)

The effect of additives on the grafting of a monomer, butylmethacrylate (BA), into simul (a soft wood) has been studied using {sup 60}Co source at 3 Mrad. The enhancement of polymer loading (grafting) by the addition of minute amounts (1%) of oligomers and of polyfunctional monomers into simul + BA system has been further increased in the presence of acid and urea. The synergistic polymer loading yields by acid addition cause substantial decrease of tensile strength values of wood-plastic composite; but urea increases both polymer loading and tensile strength values synergistically in these systems. (author).

1992-07-01

244

Effect of urea on the mechanical strength of wood-plastic composites  

International Nuclear Information System (INIS)

The effect of additives on the grafting of a monomer, butylmethacrylate (BA), into simul (a soft wood) has been studied using "6"0Co source at 3 Mrad. The enhancement of polymer loading (grafting) by the addition of minute amounts (1%) of oligomers and of polyfunctional monomers into simul + BA system has been further increased in the presence of acid and urea. The synergistic polymer loading yields by acid addition cause substantial decrease of tensile strength values of wood-plastic composite; but urea increases both polymer loading and tensile strength values synergistically in these systems. (author).

1992-01-01

245

Photocatalytic degradation of gaseous benzene over TiO{sub 2}/Sr{sub 2}CeO{sub 4}: Preparation and photocatalytic behavior of TiO{sub 2}/Sr{sub 2}CeO{sub 4}  

Energy Technology Data Exchange (ETDEWEB)

The paper demonstrates that the photocatalytic activity of TiO{sub 2} towards the decomposition of gaseous benzene in a batch reactor can be greatly improved by loading TiO{sub 2} on the surface of Sr{sub 2}CeO{sub 4}. The research investigates the optimum loading amount of TiO{sub 2} on Sr{sub 2}CeO{sub 4} in enhancing the photocatalytic activity of TiO{sub 2}. The prepared photocatalyst was characterized by XRD, UV-vis diffuse reflectance and XPS analyses. TiO{sub 2} is loaded on Sr{sub 2}CeO{sub 4} at 773 K. TiO{sub 2}/Sr{sub 2}CeO{sub 4} absorbs much more visible light than TiO{sub 2}. The XPS spectrum shows that there are Ti, O, C, Sr elements on the surface of the TiO{sub 2}/Sr{sub 2}CeO{sub 4}, and that the binding energy value of Ti2p transfers to a lower value. TiO{sub 2}/Sr{sub 2}CeO{sub 4} demonstrates 2.0 times the photocatalytic ...

2007-02-09

246

Comparison of Al{sub 0.51}In{sub 0.49}P and Ga{sub 0.51}In{sub 0.49}P window layers for GaAs and GaInAsP solar cells  

Energy Technology Data Exchange (ETDEWEB)

Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

1997-12-31

247

AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy  

Science.gov (United States)

AlGaInP double heterostructure laser diodes with a GaInP active layer constitute a basic laser structure for visible-light lasers using an AlGaInP alloy system. This paper gives a detailed description of (Al/sub x/Ga/sub 1 - x/)/sub 0.5/In/sub 0.5/P metalorganic vapor phase epitaxial growth, laser-fabrication processes, and basic device-characteristics for these lasers. The obtained pulsed-threshold-current was about 3.8 kA/cm/sup 2/(3.2 kA/cm/sup 2/ minimum) for laser diodes with an 8-10 /n//m wide and 150-300 ..mu..m long injection stripe. High characteristic-temperature T/sub o/ for the temperature dependence of pulsed threshold current was obtained and was found to be dependent on band-gap-energy differences between active layers and cladding layers. The maximum value for T/sub o/ was 222 K. The lasing wavelength of an AlGaInP double heterostructure laser diode with a ...

1987-06-01

248

Electron spin resonance investigation of Mn^{2+} ions and their dynamics in manganese doped SrTiO_3  

CERN Document Server

Using electron spin resonance, lattice position and dynamic properties of Mn2+ ions were studied in 0.5 and 2 % manganese doped SrTiO3 ceramics prepared by conventional mixed oxide method. The measurements showed that Mn2+ ions substitute preferably up to 97 % for Sr if the ceramics is prepared with a deficit of Sr ions. Motional narrowing of the Mn2+ ESR spectrum was observed when temperature increases from 120 K to 240-250 K that was explained as a manifestation of off-center position of this ion at the Sr site. From the analysis of the ESR spectra the activation energy Ea = 86 mV and frequency factor 1/?0 ? (2-10)x10^(-14) 1/s for jumping of the impurity between symmetrical off-center positions were determined. Both values are in agreement with those derived previously from dielectric relaxation. This proves the origin of dielectric anomalies in SrTiO3:Mn as those produced by the ...

2007-01-01

249

Two-proton excitations at the Z=38 and Z=40 sub-shell closures  

International Nuclear Information System (INIS)

The "8"6Kr("3He,n)"8"8Sr and "8"8Sr("3He,n)"9"0Zr reactions were studied to determine whether significant excited 0"+ strength was observed or whether these nuclei exhibited absence of excited state strength generally seen away from shell closures. Various properties of the levels are considered including angular distributions, spins, parities, interference, and enhancement. It is concluded that neither "8"8Sr nor "9"0Zr exhibit the strong proton pairing vibration expected for a closed proton shell nucleus.

1977-11-01

250

Theoretical study of the phonon properties of SrS  

International Nuclear Information System (INIS)

Using an ab initio pseudopotential method within a generalized gradient approximation of the density functional theory, the structural, electronic, and phonon properties of SrS in the B1 (NaCl) and B2 (CsCl) structures have been studied. The calculated lattice constants, static bulk modulus, and first-order pressure derivative of the bulk modulus are reported for both the B1 and B2 structures and compared with previous experimental and theoretical calculations. Electronic band structures and densities of states have been derived for SrS. Subsequently, a linear-response approach to the density functional theory is used to derive the phonon frequencies and densities of states.

2009-05-25

251

Part IV. Radioactivity in plants  

International Nuclear Information System (INIS)

The results are presented of a study in radioactivity of forage (grass, alfalfa, clover), cereals (wheat, oats, rye, barley) and different agriculture products (fodder beet, sugar beet, leguminous plants, poppy, tobacco, maize, potatoes). Total beta activity, "4"0K, "9"0Sr and "1"3"7Cs activities were studied for the period 1962 to 1975 in selected localities in Slovakia. The highest values of "9"0Sr and "1"3"7Cs were measured in 1963, the lowest levels of "9"0Sr in 1975 while the lowest levels of "1"3"7Cs in 1973. (B.S.).

252

lla4278l.075  

Science.gov (United States)

... ootqn mojjl immonmlljlignhrf]\\\\\\]a`c`dtcdt_YVYYYUZVY]^_]eddljoiqrmps{sr{ urwwqyssxsyz ~quut xmrv}uxtuyw wttstutqtzsrpmqsn qrqnijp ojinikqihlkdehe_`\\[UU[ ...

253

lla2388f.124  

Science.gov (United States)

... stwrvy}prpgup sbjmqnunrnktq mqhng}vuutmkojmvrsltqllttprcmkhflhikjlhx }msxvtv wxusu{xmrv}t~rwqymx{ylsptyhxvx sr}~z~u}uzvw^mdqu lt|wvyqvtllox} jlopl~ tplr ...

254

Trial of Seroquel SR for Alcohol Dependence and Comorbid Anxiety  

Science.gov (United States)

Alcoholism; Anxiety Disorders; Generalized Anxiety Disorder; Post-Traumatic Stress Disorder; Panic Disorder; Obsessive-Compulsive Disorder

2008-12-05

255

Surface modification of PTFE sheet by synchrotron radiation in the soft X-ray region  

International Nuclear Information System (INIS)

Full text: The surface properties of poly (tetrafluoroethylene) (PTFE) are changed by the exposure to synchrotron radiation (SR). We succeeded in controlling the wettability of the PTFE surface from hydrophobic to hydrophilic by varying the substrate temperature during the SR irradiation and found that the wettability was ascribable to microstructure and chemical composition of surface.In these previous works, oxygen atoms were found to inhabit on the hydrophobic surface of PTFE. In this study, we investigated the surface modification of PTFE from the SR exposure experiment under the O_2 gas atmosphere. The SR exposure to the PTFE sheet was carried out at beamline 6 (BL6) of the New- SUBARU. The PTFE sheet was irradiated to the white beam, ranging 50-1000 eV at BL6 at room temperature. The gas cell was mounted at the irradiation chamber. The O_2 gas pressure in the gas cell can be maintained at about ...

2004-07-19

256

Structure and electric transport properties of LnSr_2FeTiO_7 (Ln = La, Nd and Gd)  

International Nuclear Information System (INIS)

Three new phases with compositions, LaSr_2FeTiO_7, NdSr_2FeTiO_7 and GdSr_2FeTiO_7, were prepared by the traditional ceramic method. Lazy-Pulverix analysis of the X-ray diffraction data suggests that the phases crystallize in the RP-type (n = 2) structure in the space group, I4/mmm. The cell dimensions along the c-axis decrease with decrease in size of the rare earth ions. Electrical resistivity, as a function of temperature, shows that the materials are insulators and the resistivity decreases with decrease in the size of the rare earth ion, which is attributed to increase in the three-dimensional character. (author)

2011-02-01

257

Spin-density-wave transition and #mu#SR in the heavy-fermion Ce(Ru, T)_2Si_2, T = Rh, Pd  

International Nuclear Information System (INIS)

... 900526-11-8 277 p. MATERIALS SCIENCE antiferromagnetic materials cerium

1999-02-28

258

Refilling Intracellular Calcium Stores  

UK PubMed Central (United Kingdom)

Within the cardiac cell, the movements of calcium ions are tightly regulated by a number of regulatory proteins including pumps, and channels. The sarcoplasmic reticulum (SR) is in large part...Full Text Available

2010-01-01

259

Psychological mediators of bupropion sustained-release treatment for smoking cessation  

British Library Electronic Table of Contents (United Kingdom)

ABSTRACT Aim The study aimed to test simultaneously our understanding of the effects of bupropion sustained-release (SR) treatment on putative mediators and our understanding of determinants of post-quit abstinence, including withdrawal distress, cigarette craving, positive affect and subjective reactions to cigarettes smoked during a lapse. The specificity of bupropion SR effects was also tested in exploratory analyses. Design Data from a randomized, placebo-controlled clinical trial of bupropion SR were submitted to mediation analyses. Setting Center for Tobacco Research and Intervention, Madison, WI, USA. Participants A total of 403 adult, daily smokers without contraindications to bupropion SR use. Intervention Participants were assigned randomly to receive a 9-week course of bupropion...

2008-01-01

260

Performance of Pd-Ag/Al2O3 catalysts prepared by the selective deposition of Ag onto Pd in acetylene hydrogenation  

British Library Electronic Table of Contents (United Kingdom)

The performance of Ag-promoted Pd/Al2O3 catalysts, which were prepared by the selective deposition of Ag onto Pd using a surface redox (SR) method, during acetylene hydrogenation was compared with that of catalysts prepared by impregnation. The Pd surface was more effectively modified with Ag added by SR, even when small amounts of Ag were added. The catalyst prepared by SR showed a higher ethylene selectivity than the one prepared by impregnation, because SR allowed both the preferential deposition of Ag on the low-coordination sites of Pd and a greater electronic modification of Pd by Ag.

2011-01-01

262

Neutron time-of-flight spectroscopy and the reaction "8"8Sr("3He,n)"9"0Zr  

International Nuclear Information System (INIS)

... states helium 3 reactions ion sources mev range 10-100 neutron spectrometers

263

Isobaric analogue resonances in (e,e'p) on "9"0Zr, "8"9Y and "8"8Sr  

International Nuclear Information System (INIS)

... minutes living radioisotopes nuclear reactions nuclei nucleons odd-odd nuclei

264

Investigation of SrSO_4 desulfurization during reductive roasting of celestite ore with blast-furnace coke  

International Nuclear Information System (INIS)

Using the method of statistic planning of an experiment, the SrSO_4 desulfurization process has been studied in the case of reductive roasting of celestine with the use blast-furnace coke. The main factors that determine the rate of the SrSO_4 desulfurization are the roasting temperature and charge components dispersity. The desulfurization rate increases proportionally to the increase in the roasting temperature and dispersity of the reaction mixture components. To decrease the SrSO_4 desulfurization and the concentration of sulfur-containing components in gases released at rather a high celestine reduction rate, the roasting is recommended to proceed at the temperature of 1100 to 1150 deg, in this case it is necessary to limit the content of small (less than 3.2 mm) fractions of reagents.

266

Immobilization of strontium, cesium and rhenium into #alpha#-SiAlON ceramics assisted with co-doping of yttrium  

International Nuclear Information System (INIS)

Immobilization of long-lived fission products (LLFP) such as radioactive Tc, Cs and Sr into #alpha#-SiAlON ceramics was evaluated using stable isotopes instead of radioactive isotopes, and the applicability of #alpha#-SiAlON ceramics as the inert matrix for transmutation of LLFP was investigated. In the case of single addition of SrO, SrCO_3, Cs_2CO_3 or ReO_2 to the starting materials, #alpha#-SiAlON, single phase was not formed after hot-pressing. When Y_2O_3 was added with SrO, SrCO_3 or Cs_2CO_3 to the starting materials (#alpha#-Si_3N_4, AlN and #alpha#-Al_2O_3) in optimum compositions, #alpha#-SiAlON single phase was obtained after hot-pressing at 1700degC or 1800degC. From the EDS analysis, Sr and Y were detected from grains. It is suggested that Y would assist the expansion of interstices of #alpha#-SiAlON lattice, resulting in the incorporation of ...

2008-06-01

267

Highly excited spin-1 states in "8"8Sr by the (#gamma#,#gamma#) reaction  

International Nuclear Information System (INIS)

The resonant scattering of bremsstrahlung #gamma#-rays by a SrCO_3 target has been studied for #gamma#-ray energies of 5-11 MeV. Six #gamma#-transitions of energies between 6-8 MeV, which indicate six resonant states in "8"8Sr, were observed. The relative intensities of the resonantly scattered #gamma#-rays at 125 and 150"0 were found to be compatible only with the assignment of spin 1 to the six states. Radiative widths of the resonant states were deduced. The possibility that these states are components of the giant M1 resonance in "8"8Sr is discussed. (orig.).

268

Estimation of Human Toxicity From Animal Inhalation Toxicity ...  

Science.gov (United States)

... Bisgard, GE, Ruiz, AV, Grover, RF & Will, JA, "Ventilatory control in the ... Watkins, BE, Riegle, GD & Heisey, SR, "Respiratory responses to ACTH and ...

1997-10-01

269

Emplacement ages of Jurassic-Cretaceous South African kimberlites by the Rb-Sr method on phlogopite and whole-rock samples  

International Nuclear Information System (INIS)

Rb-Sr phlogopite age determinations, interpreted as emplacement ages, are reported for 15 southern African kimberlites. Jagersfontein and Rietfontein (85 and 95 Ma) have ages typical of the majority of well-known Cretaceous kimberlites, whereas somewhat older ages of about 118 to 125 Ma have been obtained for localities in the Postmasburg, Barkly West and Boshoff districts. Previous zircon ages of 90Ma for Finsch and Roberts Victor are believed to be incorrect. Two other localities in the Barkly West area have significantly younger emplacement ages of about 114 Ma relative to most Barkly West occurrences. Two off-craton kimberlites, Uintjiesberg and Mzongwana, are 100 and 150 Ma in age respectively. Swartruggens and Elandskloof have ages of 150-160 and 165 Ma respectively. A Barkly West occurrence, Klipfontein, also has an apparent age of 160 Ma, but this result cannot be considered reliable. The emplacement ages and initial ...

271

Visible light emitting vertical cavity surface emitting lasers  

Science.gov (United States)

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and ...

1995-06-27

272

The Structural and Optical Properties of GaAs1-xPx /GaAs  

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the ...

2008-08-25

273

Study of the effects of interactions quantum interference and disorder in GaAs and of GaAs jointed to a superconductor; Etude des effets d`interference quantique et de desordre dans GaAs avec interactions et GaAs connecte a un supraconducteur  

Energy Technology Data Exchange (ETDEWEB)

The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been ...

1997-11-07

274

Strain effect and characteristics of GaInP/AlGaInP strain-compensated multiple quantum wells  

Energy Technology Data Exchange (ETDEWEB)

Ga{sub 0.6}In{sub 0.4}P/(Al{sub 0.8}Ga{sub 0.2}){sub 0.4}In{sub 0.6}P strain-compensated multiple quantum wells (SCMQW) and Ga{sub 0.5}In{sub 0.5}P/(Al{sub 0.4}Ga{sub 0.6}){sub 0.5}In{sub 0.5}P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

2003-02-15

275

Strain effect and characteristics of GaInP/AlGaInP strain-compensated multiple quantum wells  

International Nuclear Information System (INIS)

Ga_0_._6In_0_._4P/(Al_0_._8Ga_0_._2)_0_._4In_0_._6P strain-compensated multiple quantum wells (SCMQW) and Ga_0_._5In_0_._5P/(Al_0_._4Ga_0_._6)_0_._5In_0_._5P unstrained MQW were grown by MOVPE to investigate the shift of photoluminescence (PL) peak wavelength and the carrier lifetime caused by strain effect in SCMQW. The PL peaks of SCMQW and unstrained MQW were 608 and 628 nm, respectively. From the rocking curve of SCMQW, it indicated that the active layers of SCMQW were not zero net strain. The residual strain caused the emission intensity of SCMQW to be about four times weaker than that of unstrained MQW. The carrier lifetimes of SCMQW and unstrained MQW were measured to be 3 and 6.02 ns, respectively. It was conjectured that the residual strain in SCMQW induced a decrease in the carrier lifetime by a factor of two with respect to that of unstrained MQW.

2003-02-15

276

Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition  

Energy Technology Data Exchange (ETDEWEB)

Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24C were obtained for an inner stripe structure laser diode with a 250- m-long and 7- m stripe geometry. The laser operated at up to 51C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cmS, was obtained with a 20- m stripe width laser diode under room-temperature pulsed operation.

1986-01-20

277

Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition  

Energy Technology Data Exchange (ETDEWEB)

Continuous-wave (cw) operation at temperatures up to 23 /sup 0/C of an Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P/Ga/sub 0.52/In/sub 0.48/P/ Al/sub 0.26/Ga/sub 0.26/In/sub 0.48/P double heterostructure (DH) laser has been achieved for the first time. The threshold current was 160 mA at 20 /sup 0/C for a device with a 10-..mu..m-wide and 250-..mu..m-long ion-implanted stripe geometry. The emission wavelength was 671 nm during cw operation at 10 /sup 0/C. To reduce thermal resistance to a heat sink, a dually stacked structure made of a thin (approx.0.3 ..mu..m) p-AlGaInP layer and a p-Al/sub 0.76/Ga/sub 0.24/As layer was used as a cladding layer. The DH wafer was grown by atmospheric pressure metalorganic chemical vapor deposition.

1985-11-15

278

Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys  

International Nuclear Information System (INIS)

The dependence of the photoluminescent properties of In_0_._4_8(Al_yGa_1_-_y)_0_._5_2P alloys (0#<=#y#<=#0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ''ordered'' domains and the ''disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical ...

279

GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy  

Energy Technology Data Exchange (ETDEWEB)

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

2004-12-21

280

Defects induced by focused ion beam implantation in GaAs  

Energy Technology Data Exchange (ETDEWEB)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 /sup 0/C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 /sup 0/C, except for a sample of Ga implantation with a dose higher than 10/sup 14/ cm/sup 2/ . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10/sup 13/ cm/sup 2/ .

1988-05-01

281

Defects induced by focused ion beam implantation in GaAs  

International Nuclear Information System (INIS)

The characteristics of defects induced by Si and Ga focused ion beam (FIB) implantation in n-GaAs have been investigated by means of deep-level transient spectroscopy (DLTS), C--V carrier profiling, and resistance measurements. The DLTS spectra of Si and Ga FIB implanted samples annealed at temperatures up to 500 "0C are apparently identical to one another and show three different electron traps with an activation energy between 0.25 and 0.6 eV. The resistance increases by more than five orders of magnitude by Si and Ga FIB implantation due to the induced defects. However, it is restored to initial values after annealing at 600 "0C, except for a sample of Ga implantation with a dose higher than 10"1"4 cm"2 . For annealing of induced defects, there are no intrinsic problems for FIB implantation with a dose lower than 10"1"3 cm"2.

282

Comparison of plasma chemistries for inductively coupled plasma etching of InGaAlP alloys  

International Nuclear Information System (INIS)

Two plasma chemistries, i.e., CH_4/H_2/Ar and Cl_2/Ar, were compared for the etching of InGaP, AlInP, and AlGaP under inductively coupled plasma (ICP) conditions. While the etching with CH_4/H_2/Ar discharges appears to be ion driven, Cl_2/Ar discharges showed an additional strong chemical enhancement. The highest etch rate (#approx#1 #mu#m/min) for InGaP was achieved at high ICP source power (#>=#750 W) with the Cl_2/Ar chemistry. Cl_2/Ar discharges provided very smooth surfaces in all three materials with root-mean-square roughness measured by atomic force microscopy around 2 nm. This result may be due to the efficient ion-assisted product desorption in this chemistry. The etched near-surface region of InGaP (#approx#100 Angstrom) with Cl_2/Ar maintained almost the same stoichiometry as that of the unetched control. By contrast, the CH_4/H_2/Ar plasma chemistry produced somewhat rougher surfaces ...

1998-05-01

283

Comparative study of phase stability and film morphology in thin-film M/GaAs systems (M = Co, Rh, Ir, Ni, Pd, and Pt)  

Energy Technology Data Exchange (ETDEWEB)

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the ...

1987-09-01

284

Al/sub 0. 3/Ga/sub 0. 7/P/sub 0. 01/As/sub 0. 99/ GaAs laser heterostructures grown by molecular beam epitaxy  

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

1982-09-01

285

Using focused ion beam damage patterns to photoelectrochemically etch features in III-V materials  

Energy Technology Data Exchange (ETDEWEB)

A method of patterning n-type GaAs, InP, InGaAs, and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused ion beam (FIB) at low dose is described. The ion beam is used to produce damage in a desired pattern in the material. Subsequent PEC etching of the material reveals the ion induced features in relief. The procedure is highly sensitive, requiring a dose of only 5 x 10/sup 9/ ions/cm/sup 2/ for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.

1986-03-10

286

Spectroscopic studies of the Sm/sub 3/Ga/sub 5/O/sub 12/ monocrystals  

Energy Technology Data Exchange (ETDEWEB)

The fluorescence, absorption, infrared and Raman spectra of Sm/sub 3/Ga/sub 5/O/sub 12/ have been investigated. The energy-level schemes in the energy range 3000-16000 cm/sup -1/ have been determined. The number and symmetries of the Sm/sub 3/Ga/sub 5/O/sub 12/ crystal normal mode have been obtained by the molecular site group analysis and their comparison with the experiment has been made.

1984-11-01

287

Polycrystalline MBE-grown GaAs for solar cells  

Energy Technology Data Exchange (ETDEWEB)

This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

1997-02-01

288

Measurement of AlP/GaP (001) heterojunction band offsets by x-ray photoemission spectroscopy  

Energy Technology Data Exchange (ETDEWEB)

X-ray photoemission spectroscopy has been used to measure the valence band offset {Delta}E{sub v} for the AlP/GaP (001) heterojunction interface. The heterojunction samples were prepared by molecular-beam epitaxy. A value of {triangle}E{sub v}=0.43 eV is obtained (staggered band alignment, with AlP valence band below that of GaP). 24 refs., 8 figs., 1 tab.

1993-07-01

289

Local Heine-Abarenkov model potential for III-V and II-VI covalent compounds  

Energy Technology Data Exchange (ETDEWEB)

A local Heine-Abarenkov model potential is proposed for zinc blende-type crystals. The potential parameters are determined by satisfying the zero pressure condition and the first zero of the empirical pseudopotential interpolated from band calculations. Two sets of parameters are presented for thirteen tetrahedral compounds such as AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, and CdTe.

1983-10-01

290

Kinetic studies of alkali metal gallide decomposition in aqueous hydroxide solutions  

International Nuclear Information System (INIS)

Kinetics of decomposition of gallium and alkali metal intermetallic compounds in the systems LiGa-LiOH, LiGa-NaOH and LiGa-KON was studied in the temperature range of 40-80 deg C. It was ascertained that increase in temperature gives rise to increase in decomposition rate, whereas increase in hydroxide concentration involves the reaction deceleration. An assumption was made that the decomposition occurs with superimposing of two mechanisms, i.e. chemical and electrochemical decomposition. Basic kinetic characteristics of the process were determined - decomposition rate constant and current density

2002-01-01

291

High-power CW operation of AlGaInP laser-diode array at 640 nm  

Science.gov (United States)

Visible-emitting high-power laser bars are investigated at an emission wavelength of 640 nm. AlGaInP/GaInP, single tensile-strained quantum well, separate confinement heterostructures are fabricated into one cm long laser bars using a 0.7 fill factor. The low threshold current of the diode, combined with the aggressive heatsinking of a silicon microchannel cooler has resulted in more than 12 W of continuous wave output power.

1995-02-01

292

Design of LQ-PSS for Power System Stability Enhancement using GA  

Energy Technology Data Exchange (ETDEWEB)

This paper proposes the design of LQ-PSS (linear quadratic power system stabilizer) for improving power system stability using genetic algorithm(GA). We are turned weighting matrices of LQ-PSS using GA. To evaluate the usefulness of the proposed method, we performed the nonlinear simulation on a single machine infinite system. As results on a single machine infinite system. As results of the simulation, the proposed method shows the better control performance than CPSS(conventional power system stabilizer) in terms of settling time and damping effects. (author). 7 refs., 7 figs., 3 tabs.

2001-07-01

293

Crystal field levels of Pr"3"+ in PrFeO_3 and PrGaO_3 determined by inelastic neutron scattering  

International Nuclear Information System (INIS)

The crystal field splitting of the "3H_4 ground state of the Pr ion in PrFeO_3 and PrGaO_3 has been investigated by inelastic scattering of the thermal neutrons. At several temperatures the transitions have been measured by TAS and TOF methods for polycrystalline PrFeO_3 and by the TOF method for polycrystalline PrGaO_3. Energy level schemes which are different for these materials are given. (author).

1975-01-01

294

Critical phenomena in four-component systems  

Science.gov (United States)

This article examines problems relating to the calculation of the position of regions of limited solubility of components in the liquid state for four-component systems. An approach based on the use of criterion of stability with respect to diffusion for obtaining equations which describe the region of stratification of the liquid phase in a four-component system is used. The authors used a ES-1020 computer to analyze the critical phenomena in Al-In-P-Sb, Al-Ga-In-P, Al-Ga-In-As, and In-Ga-As-P systems. The position of the spinode in the phase diagram of a four-component system is obtained.

1987-06-01

295

Continuous wave operation (77 K) of yellow (583. 6 nm) emitting AlGaInP double heterostructure laser diodes  

Science.gov (United States)

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

1986-03-03

296

Aluminium, gallium and indium complexing with methylthymol blue  

International Nuclear Information System (INIS)

Al, Ga and In complexing with methylthymol blue (H_6R) purified by gel filtration is studied. in the case of metal excess complexes with the ratio of components M:H_6R=2:1 with #lambda#=587(Al), 590(Ga) and 593 nm(In) appear. In the case of reacting agent excess complexes with the ratio of component 1:1 with #lambda#_m_a_x=480-490 (Al) and 480 nm(Ga, In) appear. The mechanism of complexing reactions is studied. Molar extinction coefficients and stability constants are calculated.

1988-01-01

297

cw operation of an AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition  

Science.gov (United States)

Continuous wave operation of an Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P /Ga/sub 0.52/In/sub 0.48/P /Al/sub 0.21/Ga/sub 0.31/In/sub 0.48/P double heterostructure (DH) laser diode was achieved for the first time at 77 K. The device was made from a DH wafer grown by atmospheric metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials. At 77 K, the lasing wavelength was 0.653 ..mu..m and the threshold current was 55 mA for a diode with a nitride-insulated, 8-..mu..m-wide and 250-..mu..m-long stripe geometry.

1984-09-15

298

Vacancy ordering and oxygen dynamics in oxide ion conducting La1-xSrxGa1-xMgxO3-x ceramics: 71Ga, 25Mg and 17O NMR  

International Nuclear Information System (INIS)

The oxygen vacancies distribution in the rigid lattice and the thermally activated motion of oxygen atoms are studied in La1-xSrxGa1-xMgxO3-x (x=0.00; 0.05; 0.10; 0.15 and 0.20) compounds. For that 71Ga, 25Mg and 17O NMR was performed from 100 K up to 670 K, and ion conductivity measurements were carried out up to 1273 K. The comparison of the electric field gradients at the Ga- and Mg-sites evidences that oxygen vacancies appear exclusively near gallium cations as a species trapped below room temperature in local clusters, GaO5/2-#square#-GaO5/2. These clusters decay at higher temperature into mobile constituents of the structural octahedra Ga(O5/6#square#1/6)6/2. At the same time, the nearest octahedral oxygen environment of magnesium cations persists at different doping levels. The case of two adjacent vacant anion sites is found highly unlikely within the ...

2011-01-01

299

Transmission electron microscopy of strained In/sub y/Ga/sub 1//sub -//sub y/As/GaAs multiquantum wells: The generation of misfit dislocations  

Energy Technology Data Exchange (ETDEWEB)

We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and ...

1989-05-01

300

Thin film GaAs solar cells on glass substrates by epitaxial liftoff  

Energy Technology Data Exchange (ETDEWEB)

In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

1997-02-01

301

Temperature dependence of threshold current of injection lasers for short pulse excitation  

Energy Technology Data Exchange (ETDEWEB)

We report measurements of the temperature dependence of the threshold current of GaAs, 1.3-..mu..m InGaAsP, and 1.5-..mu..m InGaAsP double heterostructure lasers using short electrical pulses. T/sub 0/approx.200 K is observed for all the lasers. These high T/sub 0/ values show that the carrier density at threshold does not increase rapidly with increasing temperature in any of the lasers studied and thus the observed low cw T/sub 0/ of InGaAsP lasers is primarily due to a decrease of the carrier lifetime at threshold with increasing temperature.

1984-05-15

302

Single-event dynamics of high-performance HBTs and GaAs MESFETs  

Energy Technology Data Exchange (ETDEWEB)

Picosecond charge-collection transients measured for GaAs/AlGaAs HBTs following 3.0 MeV [alpha]-particle and 620 nm picosecond laser excitation reveal charge-collection efficiencies up to twenty-eight times smaller than for GaAs MESFETs, with [approximately]90% of the charge collected within 75 ps of the ionizing event. The small charge-collection efficiency of the HBTs is a consequence of the ultrafast charge-collection dynamics in these devices. The authors show that picosecond laser excitation reproduces nicely the ion-induced transients, providing a valuable tool for the investigation of charge-collection and SEU phenomena in these devices.

1993-12-01

303

Radiation tolerant GaAs MESFET with a highly-doped thin active layer grown by OMVPE  

International Nuclear Information System (INIS)

A new structure of GaAs MESFET with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total #gamma#-ray dose have been found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The authors have designed a new structure from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total #gamma#-ray dose. It has been successfully demonstrated by utilizing a highly-doped thin active layer (4 x 10"1"8 cm"-"3, 100 Angstrom) grown by OMVPE. This MESFET can withstand a dose ten times higher [1 x 10"9 rads(GaAs)] than a conventional one can.

1990-07-16

304

Novel photoaffinity ligands for the GA-receptor  

Energy Technology Data Exchange (ETDEWEB)

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

1990-05-01

305

Materials aspects of multijunction solar cells  

Energy Technology Data Exchange (ETDEWEB)

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AlGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 {mu}m h{sup -1}. Device quality GaAs and Al{sub x}Ga{sub 1-x}As films were grown with p-type background carbon doping in the ranges 10{sup 16}-10{sup 19} cm{sup -3} and 10{sup 16}-10{sup 20} cm{sup -3} respectively. N-type films were achieved by SiH{sub 4} doping, producing carrier concentrations in the range 10{sup 16}-10{sup 18} cm{sup -3}. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed. (orig.).

1991-05-01

306

Lasing characteristics of visible AlGaInP/AlGaAs vertical-cavity lasers  

Energy Technology Data Exchange (ETDEWEB)

We report the lasing characteristics of gain-guided AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes. At room temperature, continuous-wave operation is achieved over the wavelength range of 657--685 nm with the minimum threshold current at 670 nm. Devices with a 10-[mu]m diameter have threshold currents as low as 1.25 mA at room temperature (297 K) and 0.8 mA at 250 K. In addition, a single predetermined linear polarization state is found, independent of the lasing mode order and operating temperature.

1994-07-01

307

Incorporating phenolic compounds opens a new perspective to use zein films as flexible bioactive packaging materials  

British Library Electronic Table of Contents (United Kingdom)

To eliminate their classical brittleness and flexibility problems zein films were plasticized by incorporation of different phenolic acids (gallic acid (GA), p-hydroxy benzoic acid (HBA) or ferulic acids (FA)) or flavonoids (catechin (CAT), flavone (FLA) or quercetin (QU)). The use of GA, CAT, FA and HBA at 3 mg/cm2 eliminated the brittleness of films and gave highly flexible films showing elongations between 135% and 189%, while FLA and QU caused no considerable effect on film elongation. The films containing FA and HBA showed extreme swelling and lost their structural integrity when hydrated in distilled water. In contrast, CAT and GA containing films maintained their integrity following hydration. Most of the GA (up to 93%) and a considerable portion of CAT (up to 60%) in the films exis...

2011-01-01

308

InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy  

Science.gov (United States)

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of ...

1987-03-01

311

Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field  

British Library Electronic Table of Contents (United Kingdom)

Within the framework of the effective-mass approximation, using a variational method, we have calculated the effect of intense laser radiation on the binding energy of the shallow-donor impurities in a Ga1- x In x N y As1- y /GaAs single quantum well for different nitrogen and indium mole concentrations. Our numerical results show that the binding energy strongly depends on the laser intensity and frequency (via the laser dressing parameter) and it also depends on the nitrogen and indium concentrations. Impurity binding energy under intense laser fields can be tuned by changing the nitrogen and indium mole fraction.

2011-01-01

312

A study on yellow luminescence in O and C ion implanted GaN  

International Nuclear Information System (INIS)

The effects of O and C ion implantation with different implantation doses on the yellow luminescence (YL) from unintentional doped n-type GaN have been studied by the photoluminescence (PL) spectra. O and C ions were implanted in the GaN samples with different doses from 1.0 x l013 to 1.0 x l017cm-2. Post-annealing was done in a quartz open-tube furnace under flowing N2 gas for 30 min at 950 degree C. By comparing with N ion implanted samples, it is assumed that different deep-level centers involving in the YL were produced in GaN after O and C ion implantation. In addition, with a dose of 1017 cm-2, the concentration of deep C centers involving in the YL was enhanced markedly. (authors)

2008-08-01

314

680-nm band GaInP/AlGaInP tapered stripe laser  

Energy Technology Data Exchange (ETDEWEB)

A gain-guiding tapered stripe laser was fabricated using a Ga/sub 0.5/In/sub 0.5/P/(Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 /sup 0/C, an aspect ratio of about 2, and an astigmatism near 25 ..mu..m. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 /sup 0/C with a constant output power of 3 mW.

1987-11-16

315

Tight-binding Hamiltonians for high-temperature superconductors and applications to coherent-potential-approximation calculations of the electronic properties of La/sub 2-//sub x/Ba/sub x/CuO/sub 4-//sub y/  

International Nuclear Information System (INIS)

We present accurate tight-binding parametrizations of the first-principles augmented-plane-wave or linear-augmented-plane-wave band structures of LaCuO_3, La_2CuO_4, Ba_2CuO_4, and the high-temperature superconductor YBa_2Cu_3O_7. We discuss the methodology and efficient application of these fits, including as an example our tight-binding coherent-potential-approximation (CPA) calculations of the effects of disorder on the electronic structure of La/sub 2-//sub x/Ba/sub x/CuO/sub 4-//sub y/. Our CPA calculations support the hypothesis of a rigid-band lowering of the Fermi level for La/sub 2-//sub x/Ba/sub x/CuO_4, enhancing the density of states there. However, for La_2BaCuO/sub 4-//sub y/ they yield the interesting result that oxygen vacancies also lower E/sub F/ and raise N(E/sub F/). This is a significant result for the theory of superconductivity in these materials. In addition to CPA calculations, ...

316

Width of the 1. 836-MeV level in /sup 88/Sr  

Science.gov (United States)

Using bremsstrahlung, the resonance fluorescence yield has been measured for the 1.836-MeV 2/sup +//sub 1/ level in /sup 88/Sr. The observed yield corresponds to a level width GAMMA = 2.94 +- 0.15 meV.

1977-06-01

317

TSI study of multiactivated SrS phosphors  

International Nuclear Information System (INIS)

Data of thermally stimulated luminescence (TSL) of single (Cu), double (Cu, Mn) and triple (Cu, Mn, Gd) activated SrS phosphors, which throws light on the nature and distribution of deeper traps have been presented. The samples are prepared by Bhawalkar's method and excited by UV 365 nm and #gamma#-rays to study the phenomenon. (author). 8 refs., 2 figs., 1 tab.

318

Strengh functions of strontium 88 obtained from the analysis of the (#gamma#,n) reaction near the threshold  

International Nuclear Information System (INIS)

The results of photoneutron spectra measurements for the reaction (#gamma#,n) on the Sr-88 nuclei near threshold are presented. The parameters of resonance levels, as well as radiative S_#gamma#"("1") and neutron S_n"("1") strength functions for transitions on the first excited level of Sr-87 were obtained. 2 refs.; 1 fig.; 1 tab.

1987-09-14

319

Spectroscopy of /sup 87,88,89/Sr with (n,. gamma. ) and (d,p) reactions  

Science.gov (United States)

Over the recent years the nuclear structure around the N = 50 shell closure, which is very pronounced in the strontium and zirconium isotopes, has been the subject of extensive experimental and theoretical work. On the proton side Z = 38 and Z = 40 provide fairly closed sub-shells. In the strontium isotopes the lg/sub 9/2/ neutron shell is closed at /sup 88/Sr, supplying relatively pure neutron-hole and neutron-particle states with large spectroscopic factors in /sup 87/Sr and /sup 89/Sr, as well as core-coupled states. The mass region is thus ideally suited to examine the transition from a correlated to an uncorrelated (chaotic.) excitational behavior. These two types are characterized e.g. by the density of excited states, the transition strengths, and the spectroscopic factors observed in transfer reactions. We conducted (n,..gamma..) and (d,p) reactions leading to /sup 87,88,89/Sr in addition to ...

1988-01-01

320

Spectroscopy of /sup 87,88,89/Sr with (n,#gamma#) and (d,p) reactions  

International Nuclear Information System (INIS)

Over the recent years the nuclear structure around the N = 50 shell closure, which is very pronounced in the strontium and zirconium isotopes, has been the subject of extensive experimental and theoretical work. On the proton side Z = 38 and Z = 40 provide fairly closed sub-shells. In the strontium isotopes the lg/sub 9/2/ neutron shell is closed at "8"8Sr, supplying relatively pure neutron-hole and neutron-particle states with large spectroscopic factors in "8"7Sr and "8"9Sr, as well as core-coupled states. The mass region is thus ideally suited to examine the transition from a correlated to an uncorrelated (chaotic?) excitational behavior. These two types are characterized e.g. by the density of excited states, the transition strengths, and the spectroscopic factors observed in transfer reactions. We conducted (n,#gamma#) and (d,p) reactions leading to /sup 87,88,89/Sr in addition to ...

1988-04-24

321

Shape coexistence and extreme deformations near A =80  

Energy Technology Data Exchange (ETDEWEB)

The neutron deficient Sr and Zr nuclei are studied in the relativistic mean-field approach. Large deformations and shape coexistence are predicted for these nuclei in the vicinity of the proton drip line. The charge radii are found to increase with the removal of neutrons from the semimagic {sup 88}Sr and {sup 90}Zr, in close agreement with the recent isotopic-shift measurements.

1992-10-01

322

Scalar fields in the dimensional reduction scheme for symmetric spaces  

Energy Technology Data Exchange (ETDEWEB)

The authors study the general features of the dimensional reduction scheme for multi-dimensional spaces of the type M/sup 4/ x S/R, S/R being a symmetric coset space. The properties of the scalar potentials of the reduced theories are investigated and an effective method of explicit calculation of these potentials is elaborated. They consider also a wide class of embeddings of Lie subalgebras into simple Lie algebras resulting in reduced theories of physical interest.

1989-01-01

323

SOME RECENT DETERMINATIONS OF ATOMIC MASSES IN THE STRONTIUM-ZIRCONIUM REGION  

Science.gov (United States)

A large double-focusing mass spectrometer was used to obtain new values for the masses of Sr/sup 86/, Sr/sup 88/, and Zr/sup 90/. Mass differences calculated from these values are found to be in better agreement with nuclear transmutation information than were previous mass spectroscopically derived values. (auth)

1960-06-01

324

Regulating the intensity of radionuclide transfer to the yield  

International Nuclear Information System (INIS)

As a result of the accident at the Chernobyl Power Plant the larger part of Belarus turned out to be polluted by radionuclides. At present isotopes of Cs, Sr and Pu, characterized by long half-lives are most dangerous for the health of the population of the polluted territories. The aim of the present work was to characterize plant species with high "1"3"7Cs and "9"0Sr accumulation ability and to determine the dependence of the accumulation on the treatment with biologically active substances. (author)

1995-12-01

325

Radionuclide X-ray fluorescence determination of Mn, Fe, Cu, Zn and Pb in wastewaters and sludges from wastewater treatment plants in Bratislava (SR)  

International Nuclear Information System (INIS)

Radiometric X-ray fluorescence analysis was used for the determination of Mn, Fe, Cu, Zn and Pb in wastewater and sludges from three wastewater treatment plants in Bratislava (SR). Metals were determined in wastewaters after preconcentration by 8-hydroxyquinoline and in sludges by drying and pressing to pellets. "2"3"8Pu and "1"0"9Cd was used for excitation of fluorescence radiation. (author).

1997-01-01

326

Quenching of the 2psub(1/2)-2psub(3/2) proton spin-orbit splitting in the Sr-Zr region  

Energy Technology Data Exchange (ETDEWEB)

The constancy in excitation energy of the lowest 2/sup +/ state in the Sr isotopes across the N=56 subshell closure is shown to result from a reduction in the 2psub(1/2)-2psub(3/2) proton spin-orbit splitting as the 2dsub(5/2) neutron orbital is filled.

1984-06-14

327

Pairing correlation effects on the electron-scattering form factor of the 1/sup +/ state at 3. 486 MeV in /sub 38//sup 88/Sr/sub 50/  

Energy Technology Data Exchange (ETDEWEB)

The electron scattering form factor for excitation of the 1/sup +/ state of /sup 88/Sr at 3.486 MeV has been calculated in the quasiparticle random phase approximation (QRPA). The disagreement between the data and restricted shell-model calculations can be explained in terms of the pairing correlations introduced by the QRPA; no ..delta..-h admixtures are required.

1985-06-06

328

Pairing correlation effects on the electron-scattering form factor of the 1"+ state at 3.486 MeV in _3_8"8"8Sr_5_0  

International Nuclear Information System (INIS)

The electron scattering form factor for excitation of the 1"+ state of "8"8Sr at 3.486 MeV has been calculated in the quasiparticle random phase approximation (QRPA). The disagreement between the data and restricted shell-model calculations can be explained in terms of the pairing correlations introduced by the QRPA; no #DELTA#-h admixtures are required. (orig.).

329

Neutron-hole strengths and core coupling in /sup 87/Sr via the /sup 88/Sr("3He,#alpha#)/sup 87/Sr reaction  

International Nuclear Information System (INIS)

Neutron-hole states in /sup 87/Sr were studied by means of the /sup 88/Sr("3He,#alpha#)/sup 87/Sr reaction at 36 MeV. Angular distribution measurements were carried out from 3"0 to 41"0 (lab) and analyzed with the zero-range distorted-wave Born approximation method. Spectroscopic factors have been determined for about 50 discrete levels in /sup 87/Sr located below 6 MeV excitation energy and for the three lowest isobaric analog states 2p(3/2, 1f(5/2, and 2p(1/2 observed around 11 MeV. Many l = 1 and l = 3 discrete levels are observed in the 3--6 MeV excitation energy range. In addition, a large part of the 1f-2p strength is found to lie in the higher-lying continuum up to 13 MeV (about 10% and 40% for the l = 1 and 3 contributions, respectively). The distribution of the 1f-2p neutron-hole strength is compared to previous data on neighboring nuclei /sup 89/Zr and /sup 91/Mo. In addition, angular ...

330

Influence of chemical substitutions on the charge instability of Formula Not Shown  

British Library Electronic Table of Contents (United Kingdom)

We study the influence of Sr substitutions on the structural counterpart of the MI transition of Formula Not Shown . When Sr content increases, the commensurate CDW modulation of pure Formula Not Shown is changed into an incommensurate short range modulation that we attribute to a charge ordering of the Formula Not Shown electrons. The same features are observed in S deficient samples.

2008-01-01

331

Inactivating calcium-sensing receptor mutations in patients with primary hyperparathyroidism.  

Science.gov (United States)

Objective:? Primary hyperparathyroidism (HPT) is characterised by autonomous secretion of PTH from enlarged parathyroid glands leading, in most patients, to asymptomatic hypercalcaemia. Familial hypocalciuric hypercalcaemia (FHH) is an autosomal dominant disorder caused by inactivating mutations in the calcium sensing receptor (CaSR) gene; it is characterised by lifelong and usually asymptomatic hypercalcaemia. Establishing the correct diagnosis is important because surgery can be curative in HPT, but ineffective in FHH. There is overlap in the diagnostic criteria for the two disorders and some patients carrying inactivating mutations in the CaSR gene, which is suggestive of FHH, also have HPT with hyperplastic parathyroid glands or adenomas. Design and Patients:? CaSR gene mutations were analyzed and clinical and biochemical parameters evaluated in 139 consecutive out-patients presenting with hypercalcaemia and suspected ...

2011-03-29

332

Heavy element contamination of surface waters in the region Banska Stiavnica (SR) measured by radionuclide X/ray fluorescence analysis  

International Nuclear Information System (INIS)

Heavy metals (Pb, Cd, Mn, Cu, Zn, Fe) were determined in surface waters in the surroundings of the depositories of the mining shrubs in the region of Banska Stiavnica (SR) by radionuclide X-ray fluorescence analysis. Allowed concentrations of the determined metals are exceeded numerously (multiplicity in some cases was 10"3-10"6). (author).

1997-01-01

333

Gamma-ray spectra from neutron capture on /sup 87/Sr  

Energy Technology Data Exchange (ETDEWEB)

The gamma-ray spectrum following neutron capture on /sup 87/Sr was measured at 3 neutron energies: E/sub n/ = thermal, 2 keV, and 24 keV. Gamma rays were detected in a three-crystal Ge(Li)-NaI-NaI pair spectrometer. Gamma-ray intensities deduced from these spectra by spectral unfolding are presented.

1981-07-01

334

Determination of the cross section for the fission neutron reaction "8"8Sr(n,p)"8"8Rb  

International Nuclear Information System (INIS)

The cross section for the reaction "8"8Sr(n,p)"8"8Rb was found to be (0.0155 +- 0.0017) mb. This value corresponds well with those calculated by Roy, Hawton, Calamand, and Nasyrov. (author).

335

Determination of Cu, Ni, Zn and Pb contents in taraxacum officinale near the highway D-61 Bratislava-Trnava (SR) by radionuclide X-ray fluorescence analysis  

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence method with Si/Li semiconductor detector and "2"3"8Pu exciting source was used for the determination of Cu, Ni, Zn and Pb in plant samples (Taraxacum officinale) from various localities near the highway D-61 Bratislava-Trnava (SR). (author) 2 refs.; 1 fig.; 1 tab.

1993-12-01

336

High-efficiency, thin-film- and concentrator solar cells from GaAs. Final report; High-efficiency, Duennschicht- und Konzentrator-Solarzellen aus Galliumarsenid. Abschlussbericht  

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to ...

1996-10-01

337

Two-nucleon multiplets near mass A = 88 and the implication for the residual nucleon-nucleon interaction  

Energy Technology Data Exchange (ETDEWEB)

The low excitation energy spectroscopy of /sup 86/Sr, /sup 88/Sr, /sup 89/Sr, /sup 86/Rb, and /sup 87/Rb nuclear systems was studied via one-nucleon transfer reactions. The strontium isotopes, /sup 87/Sr and /sup 88/Sr, were used as targets in this study. Spectroscopic strengths were extracted from the measured transfer reaction cross sections and the distorted wave Born approximation (DWBA) analysis. Efforts have been made to accomplish a complete detection of spectroscopic strengths through the excitation energy region where levels can be resolved and identified. A shell model sum rule analysis is then made. Diagonal matrix elements for the effective two-nucleon interaction were deduced from empirical energy centroid. Matrix elements normalized by their empirical monopole energy was plotted against the semiclassical angle between two spins. They were compared with various ...

1987-01-01

338

Two-nucleon multiplets near mass A = 88 and the implication for the residual nucleon-nucleon interaction  

International Nuclear Information System (INIS)

The low excitation energy spectroscopy of "8"6Sr, "8"8Sr, "8"9Sr, "8"6Rb, and "8"7Rb nuclear systems was studied via one-nucleon transfer reactions. The strontium isotopes, "8"7Sr and "8"8Sr, were used as targets in this study. Spectroscopic strengths were extracted from the measured transfer reaction cross sections and the distorted wave Born approximation (DWBA) analysis. Efforts have been made to accomplish a complete detection of spectroscopic strengths through the excitation energy region where levels can be resolved and identified. A shell model sum rule analysis is then made. Diagonal matrix elements for the effective two-nucleon interaction were deduced from empirical energy centroid. Matrix elements normalized by their empirical monopole energy was plotted against the semiclassical angle between two spins. They were compared with various analytical function forms of the ...

339

Sr-88 and Y-89 - The s-process at magic neutron number N = 50  

Energy Technology Data Exchange (ETDEWEB)

The neutron capture cross sections of Sr-88 and Y-89 were measured in a quasi-stellar neutron spectrum for kT = 25 keV via the activation method. Relevant systematic uncertainties were determined experimentally by repeated activations under different conditions and with different samples. Gold was used as a cross section standard. The resulting stellar cross sections for kT = 30 keV are 6.13 + or - 0.18 mbarn for Sr-88 and 19.0 + or - 0.6 mbarn for Y-89. The partial cross section Sr-86(n, gamma) Sr-87m was measured to 48.1 + or - 1.2 mbarn. Compared to previous data, the associated uncertainties are reduced by factors of 3 and 5, respectively. The implications for s-process nucleosynthesis around magic neutron number N = 50 are discussed in the light of new information on neutron density and temperature. 38 refs.

1990-05-01

340

Sr-88 and Y-89 - The s-process at magic neutron number N = 50  

International Nuclear Information System (INIS)

The neutron capture cross sections of Sr-88 and Y-89 were measured in a quasi-stellar neutron spectrum for kT = 25 keV via the activation method. Relevant systematic uncertainties were determined experimentally by repeated activations under different conditions and with different samples. Gold was used as a cross section standard. The resulting stellar cross sections for kT = 30 keV are 6.13 + or - 0.18 mbarn for Sr-88 and 19.0 + or - 0.6 mbarn for Y-89. The partial cross section Sr-86(n, gamma) Sr-87m was measured to 48.1 + or - 1.2 mbarn. Compared to previous data, the associated uncertainties are reduced by factors of 3 and 5, respectively. The implications for s-process nucleosynthesis around magic neutron number N = 50 are discussed in the light of new information on neutron density and temperature. 38 refs.

341

Sr-88 and Y-89 - The s-process at magic neutron number N = 50  

Science.gov (United States)

The neutron capture cross sections of Sr-88 and Y-89 were measured in a quasi-stellar neutron spectrum for kT = 25 keV via the activation method. Relevant systematic uncertainties were determined experimentally by repeated activations under different conditions and with different samples. Gold was used as a cross section standard. The resulting stellar cross sections for kT = 30 keV are 6.13 + or - 0.18 mbarn for Sr-88 and 19.0 + or - 0.6 mbarn for Y-89. The partial cross section Sr-86(n, gamma) Sr-87m was measured to 48.1 + or - 1.2 mbarn. Compared to previous data, the associated uncertainties are reduced by factors of 3 and 5, respectively. The implications for s-process nucleosynthesis around magic neutron number N = 50 are discussed in the light of new information on neutron density and temperature.

1990-05-01

342

Radiostrontium clearance and bone formation in response to simulated internal screw fixation  

Energy Technology Data Exchange (ETDEWEB)

Changes in radiostrontium clearance (SrC) and bone formation (tetracycline labeling) were observed in the femurs of skeletally mature dogs following the various operative steps involved in bone screw fixation. Drilling, but not periosteal stripping, produced a small but statistically significant increase in SrC and endosteal bone formation in the distal third of the bone. Strontium clearance values equivalent to those produced by drilling alone were recorded after screw fixation at low or high torque (5 versus 20 inch pounds), as well as by the insertion of loosely fitting stainless steel implants. Bone formation (equals the percentage tetracycline-labeled trabecular bone surfaces) was increased by 30% when SrC values exceeded 3.5 ml/100 g bone/min, and the relationship was linear when SrC values ranged between 1.0 and 7.0 ml/100 g bone/min. The changes in SrC and bone formation ...

1987-06-01

343

Electron affinity of strontium  

Energy Technology Data Exchange (ETDEWEB)

We have observed a threshold in the electron photodetachment cross section of {sup 88}Sr{sup {minus}} ions at a photon energy {ital h}{nu}=1.820 eV and assign it to a {ital p}-wave transition from the 5{ital s}{sup 2}5{ital p}{sup 2}{ital P} ground state in Sr{sup {minus}} to the 5{ital s}5{ital p}{sup 3}{ital P} state in neutral Sr. The measurement was made with a new technique combining the tunable laser photodetachment threshold method with accelerator mass spectrometry. We determine for the first time the electron affinity of Sr to be 48{plus_minus}6 meV, much smaller than predicted in recent calculations. The {sup 2}{ital P}{sub 1/2}-{sup 2}{ital P}{sub 3/2} fine splitting of the Sr{sup {minus}} ground state is estimated to be 26{plus_minus}8 meV.

1995-07-17

344

Effect of sintering optimization on the electrical properties of bulk BaxSr1-xTiO3 ceramics  

British Library Electronic Table of Contents (United Kingdom)

BaxSr1-xTiO3 (x=0.6, 0.75, 0.80, 0.85 and 0.9) compositions are prepared by solid-state reaction route using controlled heating and cooling. Density optimization by varying sintering temperature was achieved. X-ray diffraction (XRD) analysis shows the phase pure materials. The lattice constant decreases from 3.9868A (x=0.90) to 3.9449A (x=0.60) with increasing Sr2+; the tetragonal distortion also decreases. Dielectric constant show sharp peaks for samples having low strontium content (0.10, 0.15) and gets smeared out as the strontium content is increased (0.20, 0.25). For further higher Sr2+ composition (0.40), the dielectric peak could not be observed in the measured temperature range. The peak broadening in Sr2+ rich compositions indicates that diffused transitions and is attributed to t...

2008-01-01

345

Relaxor or classical ferroelectric behaviour in ceramics with composition Ba{sub 1-x}Na{sub x}Ti{sub 1-x}Nb{sub x}O{sub 3}  

Energy Technology Data Exchange (ETDEWEB)

Ceramics with composition Ba{sub 1-x}Na{sub x}Ti{sub 1-x}Nb{sub x}O{sub 3} are of either classical ferroelectric (for 0{<=}x<0.075) and ferro- or antiferroelectric (for 0.55<x{<=}1) or relaxor ferroelectric type (for 0.075{<=}x{<=}0.55), the transition at T{sub c} being only diffuse without any frequency dispersion for this last region. All the corresponding dielectric characteristics, i.e. diffusivity of the ferroelectric-paraelectric transition, frequency dispersion of {epsilon}{sub r}', shift of T{sub m} with frequency deviation from the Curie-Weiss law, are determined. The relaxor behaviour is more relaxor the more the composition deviates from BaTiO{sub 3} and NaNbO{sub 3}. This study is in the field of preparation of relaxor ceramics free from lead in the interest of the environment, which present a transition temperature close to room temperature. (author)

2000-07-10

346

Radiation damage and recovery in the light emittance efficiency and the attenuation length of barium fluoride scintillator  

International Nuclear Information System (INIS)

Radiation damage and its recovery in the light emittance efficiency and the attenuation length of barium fluoride (BaF_2) scintillator have been investigated. The light yield and transmittance of small samples of BaF_2 scintillator were measured after #gamma#-irradiation from 0.5x10"4 to 1.1x10"5 Gy for deterioration, and after sunlight exposure for recovery. Suspension of deterioration was observed both in light yield and in attenuation length at an integrated dose of #gamma#-rays of about 10"4 Gy. Fairly good and quick recovery of the deteriorated BaF_2 scintillator was obtained by sunlight exposure. Using a Monte Carlo simulation method, the dependence of the light emittance efficiency on #gamma#-irradiation and sunlight exposure was studied. It has been found that the light emittance efficiency, as well as the attenuation length, is influenced by #gamma#-irradiation and sunlight exposure. (orig.).

347

Observation of high permittivity in Ho substituted BaZr_0_._1Ti_0_._9O_3 ceramics  

International Nuclear Information System (INIS)

The authors observed an extremely high permittivity (#approx#35 000 at T_C) in barium zirconate titanate (BaZr_0_._1Ti_0_._9O_3) ceramics with holmium substitution (1-5 mol %) in Ba site. Careful microstructural investigation and energy dispersive spectroscopy analysis of the 1-2 mol % of Ho substituted ceramics showed the enrichment of a Ho-phase along the grain boundaries with a composition close to the Ho_2Ti_2O_7 pyrochlore. The formation of Ho rich phase resulted in the Maxwell-Wagner polarization mechanism, which leads to this unusually high permittivity. Ceramics with 3 mol % or higher Ho content showed lesser permittivity values compared to 1-2 mol %, probably due to the increase in pyrochlore phase. These high dielectric constant ceramics are useful in nanoscale devices.

2007-07-09

348

Effect of Ho^3^+ substitutions on the structural and magnetic properties of BaFe12O19 hexaferrites  

British Library Electronic Table of Contents (United Kingdom)

Holmium doped barium based hexaferrites BaFe12-2xHo2xO19 with (x=0.0-1.0) were synthesized by solid state reaction method. Structural and magnetic characterization of these ferrites provide significant information about their reactive physical properties. X-ray analysis reveals that in all samples M-type structure exist with few secondary phases. Scanning electron microscope revealed the grain size of the specimen. The results show that grain size decreases with the substitution degree of Holmium. Thus rare earth element Holmium Ho^3^+ acts as a grain growth inhibitor. The magnetic hysteresis loops show the variation in the values of magnetic parameters like saturation magnetization (Ms), remanent magnetization (Mr) and coercivity (Hc) were observed by changing Ho^3^+ content in BaFe12-2xH...

2010-01-01

349

Effect of Ho"3"+ substitutions on the structural and magnetic properties of BaFe_1_2O_1_9 hexaferrites  

International Nuclear Information System (INIS)

Holmium doped barium based hexaferrites BaFe_1_2_-_2_xHo_2_xO_1_9 with (x = 0.0-1.0) were synthesized by solid state reaction method. Structural and magnetic characterization of these ferrites provide significant information about their reactive physical properties. X-ray analysis reveals that in all samples M-type structure exist with few secondary phases. Scanning electron microscope revealed the grain size of the specimen. The results show that grain size decreases with the substitution degree of Holmium. Thus rare earth element Holmium Ho"3"+ acts as a grain growth inhibitor. The magnetic hysteresis loops show the variation in the values of magnetic parameters like saturation magnetization (M_s), remanent magnetization (M_r) and coercivity (H_c) were observed by changing Ho"3"+ content in BaFe_1_2_-_2_xHo_2_xO_1_9 ferrites. Coercivity showed a maximum value of 2230 Oe for (x = 0.4) and then decreasing trend were observed in the values of ...

2010-04-09

350

Dielectric properties of Ba(Ti, Ce)O{sub 3} from 10{sup 2} to 10{sup 5} Hz in the temperature range 85-700 K  

Energy Technology Data Exchange (ETDEWEB)

Ba(Ti{sub 1-x}Ce{sub x})O{sub 3} ceramics with x = 0.1, 0.2, 0.3, 0.33, 0.4 and 0.5 have been synthesized by the mixed oxide method. Dielectric measurements were performed for Ba(Ti{sub 1-x}Ce{sub x})O{sub 3} ceramics from 10{sup 2} to 10{sup 5} Hz in the temperature range 85 - 700 K. The dielectric measurements confirmed that the solid solution range extends up to about x=0.3. In the solid solutions, the temperature of the permittivity maximum was shifted at a rate of -7 K/mol% Ce atom and the permittivity maximum decreased with increasing Ce content. The temperature and frequency dependence of the permittivity was fitted by the Curie - Weiss law beyond the transition temperature and characterized by parameters that are used to describe relaxor behaviour. (author)

1997-04-07

351

Thermal wet oxidation of GaP and Al{sub 0.4}Ga{sub 0.6}P  

Science.gov (United States)

Thermal wet oxidations of GaP and Al{sub 0.4}Ga{sub 0.6}P at 650 degree sign C for various times have been performed. Comparisons are made on oxidation rates and post oxidation morphology. Transmission electron microscopy shows that when oxidizing GaP, polycrystalline monoclinic GaPO{sub 4}{center_dot}2H{sub 2}O forms without noticeable loss of phosphorus. Oxidation for 6 h or more leads to poor morphology resulting in cracks and detachment. A thickness expansion of about 2.5-3 times is noticed as a result of oxidation. In contrast, oxidized Al{sub 0.4}Ga{sub 0.6}P exhibits much better morphology without cracks or detachment from the substrate. The oxide has an almost amorphous-like microstructure. The oxidation process shows typical diffusion-limited reaction at long anneals. Preliminary work on the oxidation of AlP indicates that the reaction leads to formation of Al{sub 2}O{sub ...

2000-08-21

352

Preparation of radiopharmaceuticals and labelled compounds using short-lived radionuclides  

International Nuclear Information System (INIS)

The subject is reviewed in sections, entitled: introduction (historical); sources of short-lived radionuclides; carbon-11; nitrogen-13; oxygen-15; fluorine-18; bromine-77; iodine-123; astatine-211; other radionuclides (including Ga-67, Ga-68, In-111, In-113m, Tc-99m, and Pb-203). (U.K.).

353

Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P and its heterostructures  

International Nuclear Information System (INIS)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, ...

354

Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0. 5/In/sub 0. 5/P and its heterostructures  

Science.gov (United States)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, ...

1988-09-01

355

Optical characterization of long-term ordered and nanocrystalline GaP  

International Nuclear Information System (INIS)

The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is reported from pure and ...

356

New materials for future generations of III-V solar cells  

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit ...

1999-03-01

357

Measurement of radiative, Auger, and nonradiative currents in 1. 3-. mu. m InGaAsP buried heterostructure lasers  

Energy Technology Data Exchange (ETDEWEB)

Frequency response measurements are used to determine the carrier lifetime of 1.3-..mu..m InGaAsP buried heterostructure lasers between 1 mA and threshold. The data confirm previous results on the radiative and Auger recombination coefficients and reveal the presence of a nonradiative current which dominates at low currents and contributes 4 mA at threshold.

1987-02-09

358

Magnetic domains in martensite of Ni-Mg-Ga alloy  

International Nuclear Information System (INIS)

The structural changes attendant on intermartensitic transformation in a Ni-Mg-Ga shape memory alloy are considered using magneto-optical visualization with the help of ferrite-garnet monocrystalline films. It is established that on the intermartensitic transformation the complete reorganization of martensite macrostructure fails. Martensite crystals resulted from the basic transformation change somewhat their sizes on intermartensitic transition. The existence of large-scale labyrinth magnetic domain structure is revealed

2006-05-01

359

Large orbital magnetic moment and its quenching in the itinerant uranium intermetallic compounds UTGa_5 (T=Ni, Pd, Pt)  

International Nuclear Information System (INIS)

The crystal structure, lattice strain due to the antiferromagnetic ordering, and magnetic form factor in the itinerant 5f compounds UTGa_5 (T=Ni, Pd, Pt) have been studied by neutron scattering. High-resolution powder diffraction revealed that the tetragonality of the U-Ga layers increases down to the series of the transition metal element T. The integrated intensities of the antiferromagnetic reflections can be well explained with the Neel-type structure for UNiGa_5, whereas UPtGa_5 has the antiferromagnetic stacking of the ferromagnetically ordered uranium moments in the c plane. In both compounds the uranium moments orient along the c axis with moments of 0.75(5) and 0.32(5) #mu#_B for UNiGa_5 and UPtGa_5, respectively. No magnetic peak could be observed in the powder diffraction pattern of UPdGa_5 due to the small magnetic moment less than the experimental ...

2003-12-01

360

GaAs detector optimization for different medical imaging applications  

International Nuclear Information System (INIS)

We have investigated the detection performance of GaAs detectors made with different thickness and contact geometries. A comparison is made between these detection capabilities and the imaging requirements for the following medical applications: digital mammography, digital chest radiography and nuclear medicine. Experimental results and preliminary images are presented and discussed. (author)

1999-09-11

361

Ferromagnetism in Mn-doped GaAs layers: Effects of laser annealing  

Energy Technology Data Exchange (ETDEWEB)

The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.

2006-05-15

362

Energy gap and bond lengths of Al_xGa_yIn_1_-_x_-_yN, Al_xGa_yIn_1_-_x_-_yP and Al_xGa_yIn_1_-_x_-_yAs quaternary alloys  

International Nuclear Information System (INIS)

We use the Generalized Quasi-Chemical Approach (GQCA) combined with ab initio ultrasoft pseudopotential calculations within density functional theory in order to obtain the structural and electronic properties of Al_xGa_yIn_1_-_x_-_yX (X=As, P or N) quaternary alloys in the zincblende structure. Results for the bond lengths show that their variations with composition are approximately linear and that they do not deviate much from the values of the corresponding binary compounds. For the variation of the band gaps, we obtain a bowing parameter b=0.26 eV for the (Ga_0_._4_7In_0_._5_3As)_z(Al_0_._4_8In_0_._5_2As)_1_-_z quaternary alloy lattice matched to InP, in very good agreement with experimental data. In the case of AlGaInN, a bowing parameter of 0.22 eV is obtained for zincblende AlGaInN lattice matched to GaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

363

Phase diagram of SrO-InO1.5-CoOx and a new compound Sr3In0.9Co1.1O6  

International Nuclear Information System (INIS)

Sr3In0.9Co1.1O6, isostructural to Ca3Co2O6, is revealed by the study of the phase relations in the system SrO-InO1.5-CoOx (1000 oC). The structure of Sr3In0.9Co1.1O6 is refined by the combination of powder X-ray and neutron diffraction. Sr3In0.9Co1.1O6 crystallizes in a trigonal lattice with the cell parameters a=b=9.59438(3) A, c=11.02172(4) A with the space group R-3c. Its structure possesses 1D (In/Co)O3 chains running along the c-axis constructed by alternating face-sharing CoO6 octahedra and (In0.9Co0.1)O6 trigonal prisms. The co-occupation of In3+ and Co3+ at the trigonal prismatic site is evidenced by elementary analysis and determined by the structure refinement. Sr3In0.9Co1.1O6 is paramagnetic, and the susceptibility is consistent with the occupation of Co3+ at 10% of the trigonal prismatic positions in a high spin state (HS, S=2). The HS Co3+ is well separated by ...

2011-04-01

364

X-ray study of CuGa_xIn_1_-_xSe_2 solid solutions  

International Nuclear Information System (INIS)

The semiconducting compound CuGa_xIn_1_-_xSe_2 crystallizes in the chalcopyrite structure (space group Ianti 42d, Z=4). The X-ray powder data for x=1, 0.75, 0.6, 0.5, 0.4, 0.25 and 0.0 have been collected and it is found that the lattice parameters a and c and their ratio c/a vary linearly with x. Thus the composition of any chalcopyrite in the pseudo-binary system CuGaSe_2 and CuInSe_2 can be obtained from the accurate lattice parameters. The crystallite size determined from the (112) plane is minimum for x=0.50 (#propor to#1000 A) and away from x=0.50 it increases. A value of u=0.240 (5) has been established for fixing, the Se-atom positions in the CuGa_0_._5In_0_._5Se_2 solid solution. The JCPDS Diffraction File No. for CuInSe_2 is 40-1487 and for CuGa_0_._5In_0_._5Se_2 is 40-1488. (orig.).

1989-12-01

365

Weed control and wheat (Triticum aestivum L.) yield under application of 2,4-D plus carfentrazone-ethyl and florasulam plus flumetsulam: Evaluation of the efficacy  

British Library Electronic Table of Contents (United Kingdom)

Three field experiments were conducted at the research fields of Plant Protection Research Institute, Iran, at different locations in 2004-2005 to study the efficacy of different broadleaved herbicides to control weeds in wheat. Treatments were the full-season hand weeded and weed-infested controls, and post-emergence applications of florasulam plus flumetsulam at 8.75, 10.50, and 12.25ga.i./ha, 2,4-D plus carfentrazone-ethyl at 210, 245, 280, and 490ga.i./ha, bromoxynil plus MCPA at 75, 100, and 150ga.i./ha, 2,4-D at 560, 720, and 1120ga.i./ha, tribenuron methyl, and 2,4-D plus MCPA. Herbicides were applied at wheat tillering stage. Naturally occurring broadleaved weed populations were used in experiments. Results indicated that bromoxynil plus MCPA at 150ga.i./ha, 2,4-D plus MCPA, and 2,...

2007-01-01

366

Visible-wavelength semiconductor lasers and arrays  

Energy Technology Data Exchange (ETDEWEB)

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

1996-09-17

367

Time-resolved resonance and linewidth of an ultrafast switched GaAs/AlAs microcavity  

CERN Document Server

We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change ...

2009-01-01

368

The optical and structural properties of polycrystalline Cu(In,Ga)(Se,S)2 absorber thin films  

British Library Electronic Table of Contents (United Kingdom)

The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...

2011-01-01

369

Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates  

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more importantly, how can the problem be fixed. In ...

370

Photoconducting properties of ultraviolet detectors based on GaN and Al{sub 1{minus}x}Ga{sub x}N films grown by ECR-MBE  

Energy Technology Data Exchange (ETDEWEB)

GaN and Al{sub 1{minus}x}Ga{sub x}N films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10{sup 9} ohm-cm and 10{sup {minus}3}--10{sup {minus}8} cm{sup 2}/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

1997-12-31

371

Photoconducting properties of ultraviolet detectors based on GaN and Al_1_-_xGa_xN films grown by ECR-MBE  

International Nuclear Information System (INIS)

GaN and Al_1_-_xGa_xN films were grown by the method of ECR-MBE. Absorption constants as a function of wavelength were determined from transmission measurements. Photoconducting detectors were fabricated from these films and characterized in terms of their spectral response and photoconductive gain. Mobility-lifetime products were determined from the measurement of photoconductive gain. The resistivity and mobility-lifetime products of the films were varied from 10--10"9 ohm-cm and 10"-"3--10"-"8 cm"2/V respectively by changing the microwave power in the ECR discharge from 20--60 watts. The change in the mobility-lifetime product is attributed to change in the lifetimes of the photogenerated carriers. This assumption is supported by direct measurement of detector response times. Finally, the authors report for the first time, the detection of alpha particles using GaN detectors.

1996-12-02

372

PIXE analysis of GaAs and ZnSe  

Energy Technology Data Exchange (ETDEWEB)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K{sub {alpha}} X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K{sub {alpha}} X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the ...

1990-01-01

373

PIXE analysis of GaAs and ZnSe  

International Nuclear Information System (INIS)

The optoelectronic compounds of GaAs and ZnSe are difficult to analyze by PIXE (particle-induced X-ray emission) due to the strong absorption of the As and Se K_#alpha# X-rays. As part of a program to investigate optoelectronic materials using ion beam techniques, we have explored the possibility of using the high sensitivity of PIXE to check these materials for stoichiometry and dopant concentrations. The K_#alpha# X-ray intensity ratios of Ga to As and Zn to Se have been investigated using H beams of 0.5 to 2.5 MeV and He beams of 1.0 to 2.5 MeV. The variation in the X-ray intensity ratio with beam energy and target thickness is modelled in terms of the cross section for X-ray production and the absorption coefficients of the X-rays in the target. The results of this model show the experimental conditions that must be satisfied in order that the X-ray intensity ratios are not strongly affected by X-ray absorption; and therefore, the ...

1989-06-01

374

Indentation modulus and hardness in heteroepitaxial Al{sub x}Ga{sub 1{minus}x}P films  

Energy Technology Data Exchange (ETDEWEB)

Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear ...

1997-05-01

375

GaAs concentrator cell production cost analysis  

Energy Technology Data Exchange (ETDEWEB)

The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE ...

1992-12-01

376

Diffusion mechanism of implanted Be in GaAs  

Energy Technology Data Exchange (ETDEWEB)

The transient enhanced diffusion of low and high dose implanted beryllium in undoped gallium arsenide during post-implant rapid thermal annealing in the temperature range of 700-900 C for 60-240 s has been studied and successfully simulated by the kick-out diffusion model, involving singly positively charged Be interstitials and doubly positively charged Ga self-interstitials. Using the ''plus one'' approach for Ga interstitial generation after implantation with the local Ga interstitial sink concept as well as the appropriate initial and boundary conditions for involved mobile species, and taking into account Fermi-level and built-in electric field effects, the obtained partial differential equations have been solved numerically by means of an explicit finite difference method. The thermal equilibrium concentrations and the diffusivities of Be and Ga interstitials, ...

2008-01-15

377

AlGaInP single quantum well laser diodes  

Energy Technology Data Exchange (ETDEWEB)

The properties and low pressure organometallic vapor phase epitaxy of Ga{sub x}In{sub 1{minus}x}P/(AlGa){sub 0.5}In{sub 0.5}P quantum well (QW) laser diode heterostructures with Al{sub 0.5}In{sub 0.5}P cladding layers, and having wavelength 614 < {lambda} < 690 nm, are described. At longer wavelengths ({lambda} > 660 nm), threshold current densities under 200 A/cm{sup 2} and efficiencies greater than 75% result from a biaxially-compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.

1994-12-31

378

626. 2-nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition  

Energy Technology Data Exchange (ETDEWEB)

Room-temperature pulsed laser operation of (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P /(Al/sub 0.17/Ga/sub 0.83/)/sub 0.5/In/sub 0.5/P / (Al/sub 0.55/Ga/sub 0.45/)/sub 0.5/In/sub 0.5/P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved. The lasing wavelength is 626.2 nm, which is the shortest ever reported for an AlGaInP double heterostructure laser. Threshold current density is 50 kA/cm/sup 2/ for a diode with a 20-..mu..m-wide and 200-..mu..m-long stripe.

1985-01-01

379

Independent superconductivity and paramagnetism in HoBa/sub 2/Cu/sub 3/O/sub z/  

Energy Technology Data Exchange (ETDEWEB)

The magnetic properties of the superconductive materials HoBa/sub 2/Cu/sub 3/O/sub z/ and YBa/sub 2/Cu/sub 3/O/sub z/ have been measured and compared. Both had superconductive transition temperatures T/sub c/ in low magnetic fields near 90 K and exhibited nearly complete magnetic-flux exclusion. The susceptibility of the Ho-based materials followed a Curie-Weiss law both above and below T/sub c/. These results give clear experimental evidence for a nearly complete decoupling of the magnetic and superconductive layers, demonstrating that the superconductivity is highly anisotropic.

1987-07-01

380

Dielectric abnormities in BaTi_0_._9(Ni_1_/_2W_1_/_2)_0_._1O_3 giant dielectric constant ceramics  

International Nuclear Information System (INIS)

BaTi_0_._9(Ni_1_/_2W_1_/_2)_0_._1O_3 ceramics were fabricated and their dielectric properties were investigated. With the sintering temperature increasing from 1250 to 1280 deg. C, the grain size abruptly increases from 1-2 to 20-40 #mu#m, accompanying significant changes in dielectric response. The samples with larger grains exhibit giant dielectric constant characteristics, which are considered to be mainly attributed to the domain boundary effect. The activation energies of the dielectric relaxation E_r_e_l_a_x=0.325 eV reveal the existence of microdomains in larger grains. The ac conductivity results also give the evidence of the domain boundary effect in the present ceramics.

2007-07-30

381

Comparative Evaluation of Different Cell Lysis and Extraction Methods for Studying Benzo(a)pyrene Metabolism in HT-29 Colon Cancer Cell Cultures  

British Library Electronic Table of Contents (United Kingdom)

Abstract Lysis and extraction of cells are essential sample processing steps for investigations pertaining to metabolism of xenobiotics in cell culture studies. Of particular importance to these procedures are maintaining high lysis efficiency and analyte integrity as they influence the qualitative and quantitative distribution of drug and toxicant metabolites in the intra- and extracellular milieus. In this study we have compared the efficiency of different procedures viz. homogenization, sonication, bead beating, and molecular grinding resin treatment for disruption of HT-29 colon cells exposed to benzo(a)pyrene (BaP), a polycyclic aromatic hydrocarbon (PAH) compound and a suspected colon carcinogen. Also, we have evaluated the efficiency of various procedures for extracting BaP parent c...

2011-01-01

382

Characterization of Y2BaCuO5 nanoparticles synthesized by nano-emulsion method  

British Library Electronic Table of Contents (United Kingdom)

Nanoscale yttrium?barium?copper oxide (Y2BaCuO5, Y211) particles were synthesized using the emulsion method and the solution method. The basic water-in-oil (w/o) emulsion system consisted of n-octane (continuous oil phase), cetyltrimethylammonium bromide (cationic surfactant), butanol (cosurfactant) and water. The composition of the emulsion system was varied and characterized by measuring the conductivity of the solutions and droplet size. The droplet size of emulsion was determined by using the dynamic light scattering method. The water content, cosurfactant content, and surfactant/n-octane ratio affected the droplet size which was in the range of 3?8?nm, and hence the w/o emulsion system was referred to as a nano-emulsion system. A model was used to verify the droplet size. The influenc...

2007-01-01

383

Barium carbonate sediment sampling for inorganic dissolved carbon using isotope mass ratio spectrometer  

International Nuclear Information System (INIS)

This paperwork explain the method of water sampling to obtain the precipitate of BaCO3 solutions that will be used to analyze 13C from field work in Kelana Jaya, Selangor, Langkawi, Kedah and Taiping, Perak. The sampling involves collecting of water samples for groundwater from boreholes and surface water from canal, river, pond and ex-mining pond from several locations at the study sites. This study also elaborates the instruments and chemicals used. The main purpose of this sampling is to obtain the precipitate of BaCO3 for 13C analysis of dissolved inorganic carbon (DIC). A correct sampling method according to standard is very important to ensure an accurate and precise result. With this, the data from the laboratory analysis result can be fully utilized to make the interpretation of the pollutants movement. (Author)

2009-10-06

384

Time-resolved neutron diffraction study of the superconducting phase formation process in the Bi(PB)-Sr-Ca-Cu-O system  

Energy Technology Data Exchange (ETDEWEB)

The results of real-time neutron diffraction measurements during the superconducting phase formation process in the Bi(Pb)-Sr-Ca-Cu-O system are reported. A Sr-Ca-Cu-O type precursor, with the same stoichiometry as the 2223 phase, was used as starting material, and the temperature range favorable to the formation of the 2223 phase was investigated. The diffraction patterns were processed by a multiphase Rietveld refinement. The formation and decomposition of the 2201 and 2212 phases were directly observed. Experimental evidence on the existence of a partially melted phase in the range 855-860[degrees]C, involved in the formation of the 2223 phase, is discussed. 14 refs., 9 figs., 1 tab.

1993-08-01

385

Time-resolved neutron diffraction study of the superconducting phase formation process in the Bi(PB)-Sr-Ca-Cu-O system  

International Nuclear Information System (INIS)

The results of real-time neutron diffraction measurements during the superconducting phase formation process in the Bi(Pb)-Sr-Ca-Cu-O system are reported. A Sr-Ca-Cu-O type precursor, with the same stoichiometry as the 2223 phase, was used as starting material, and the temperature range favorable to the formation of the 2223 phase was investigated. The diffraction patterns were processed by a multiphase Rietveld refinement. The formation and decomposition of the 2201 and 2212 phases were directly observed. Experimental evidence on the existence of a partially melted phase in the range 855-860 degrees C, involved in the formation of the 2223 phase, is discussed. 14 refs., 9 figs., 1 tab.

386

Rb-Sr ages and palaeomagnetic data for some Angolan alkaline intrusives  

International Nuclear Information System (INIS)

New Rb-Sr age measurements are reported for a number of intrusives from Angola. Data for the Njoio and Tchivira nepheline syenite bodies yield mineral isochrons indicating ages of 104,3+-0,8 Ma and 130,8+-1,4 Ma respectively. Palaeomagnetic studies on the same occurrences gave marginal and scattered results respectively. Micas from the Camafuca crater-facies kimberlite yielded and apparent age of 1 822+-151 Ma, a result that is far in excess of the Tertiary (or younger) age inferred for this pipe. Similarly conflicting data were obtained for the Nova Lisboa kimberlite. It is likely that older crustal micas incorporated in the kimberlite breccias are responsible for the anomalous ages reported on the kimberlites. Satisfactory palaeomagnetic data are reported for the Zenza and Bailundu occurrences, not dated by the Rb-Sr method. A convenient K-Ar age of 80+-0,8 Ma was obtainable for Zenza.

387

Production of plutonium, yttrium and strontium tracers for using in environmental research  

International Nuclear Information System (INIS)

Summary of cyclotron production methods of "2"3"7Pu (45,2 d), "8"8Y (106,65 d) and "8"5Sr (64,84 d) tracers via nuclear reactions with protons and alphas on "2"3"5U, "8"8Sr and "8"5Rb targets in wide energy range is given. Chemical methods of separation and purification of the tracers from the irradiated uranium, strontium and rubidium targets are described. The tracers were used for determination of Pu (239-240), Sr-90 and Am-241 in the samples (soil, plants, underground waters) from Semipalatinsk Test Site. Obtained results are discussed.

2001-12-12

388

New neutron capture and total cross section measurements on {sup 88}Sr and their impact on s-process nucleosynthesis  

Energy Technology Data Exchange (ETDEWEB)

The authors have made new and improved measurements of the neutron capture and total cross sections of {sup 88}Sr at the Oak Ridge Electron Linear Accelerator (ORELA). Improvements over previous measurements include a wider incident neutron energy range, the use of metallic rather than carbonate samples, better background subtraction, reduced sensitivity to sample-dependent backgrounds, and better pulse-height weighting functions. Because of its small cross section, the {sup 88}Sr(n,{gamma}) reaction is an important bottleneck during the s-process nucleosynthesis. Hence, an accurate determination of this rate is needed to better constrain the neutron exposure in s-process models and to more fully exploit the recently discovered isotopic anomalies in certain meteorites. They describe the experimental procedures, compare the results to previous data, and discuss their astrophysical impact.

1998-11-01

389

New 88Sr(n,g)Astrophysical Reaction Rate from Resonance Analysis of New High-Resolution Neutron Capture and Transmission Data  

Science.gov (United States)

Because of its small cross section, the 88Sr(n,g) reaction is an important bottleneck during s-process nucleosynthesis. Hence, an accurate determination of this rate is needed to better constrain the neutron exposure in s-process models and to more fully exploit the recently discovered isotopic anomalies in certain meteorites. We have completed the resonance analysis of our new and improved measurements of the neutron capture and total cross sections for 88Sr made at the Oak Ridge Electron Linear Accelerator (ORELA). We describe our experimental procedures and resonance analysis, compare our results to previous data, and discuss their astrophysical impact.

1999-08-30

390

Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices  

International Nuclear Information System (INIS)

Transmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly cubic Ce"3"+ sites along with the formation of another type of Ce"3"+ site believed to involve a nearby Sr vacancy. We suggest that the association of Ce"3"+ sites with V_S_r shifts the electroluminescence towards larger wavelengths as the symmetry of the activator site is lowered. copyright 1997 American Institute of Physics.

391

Mechanism of Dephosphorylation of the SR Protein ASF/SF2 by Protein Phosphatase 1  

British Library Electronic Table of Contents (United Kingdom)

SR proteins are essential splicing factors whose function is controlled by multi-site phosphorylation of a C-terminal domain rich in arginine-serine repeats (RS domain). The protein kinase SRPK1 has been shown to polyphosphorylate the N-terminal portion of the RS domain (RS1) of the SR protein ASF/SF2, a modification that promotes nuclear entry of this splicing factor and engagement in splicing function. Later, dephosphorylation is required for maturation of the spliceosome and other RNA processing steps. While phosphates are attached to RS1 in a sequential manner by SRPK1, little is known about how they are removed. To investigate factors that control dephosphorylation, we monitored region-specific mapping of phosphorylation sites in ASF/SF2 as a function of the protein phosphatase PP1. W...

2010-01-01

392

Luminescence and x-ray absorption measurements of persistent SrAl2O4:Eu,Dy powders: Evidence for valence state changes  

Science.gov (United States)

The development of new efficient afterglow phosphors is currently hampered by a limited understanding of the persistent luminescence mechanism. Radioluminescence (RL) and x-ray absorption measurements on the persistent phosphor SrAl2O4:Eu,Dy were combined to reveal possible valence state changes for the rare earth (co)dopants. Traps in the phosphor material are quickly filled when exposing thermally emptied SrAl2O4:Eu,Dy powder to x rays. On the same time scale a partial oxidation of Eu2+ to Eu3+ is observed by x-ray absorption near-edge spectroscopy (XANES), while for the trivalent dysprosium the valence state remains unchanged. The impact of these observations on the recently proposed models for persistent luminescence is discussed.

2011-08-01

393

Isomeric states and spin polarization in A approx. 90 nuclei  

Energy Technology Data Exchange (ETDEWEB)

The observed inhibition of M4 transitions in A approx. 90 nuclei has represented a long standing theoretical problem. In particular by calculating first- and second-order configuration mixing contributions to the inhibited M4 lifetimes of /sup 89/Y and /sup 87/Sr, it is found that the first-order perturbative treatment of the residual interaction usually used in shell-model calculations is unjustified in this case. Using random-phase approximation techniques, the renormalization effects of collective (''giant'') M4 resonances in /sup 88/Sr on the low energy M4 transitions in /sup 89/Y and /sup 87/Sr are investigated. It is concluded that the observed retardation of M4 lifetimes in these nuclei is consistent with the manifestation of nuclear spin polarization.

1980-04-01

394

Is the 4.742 MeV state in "8"8Sr the 1"- two-phonon state?  

International Nuclear Information System (INIS)

A nuclear resonance fluorescence experiment on "8"8Sr has been performed with bremsstrahlung of 6.7 MeV endpoint energy. The #gamma#-ray linear polarisation has been measured with a EUROBALL CLUSTER detector used as a Compton polarimeter. The results indicate positive parity for the J=1 state at 4.742 MeV in "8"8Sr, in contrast to the previous interpretation as a 1"- two-phonon (2"+_1 x 3"-_1) state and in conflict with the predictions of the quasiparticle-phonon model. On the basis of such calculations the 1"+ state at 3.486 MeV may be considered as the 1"+_1 one-phonon state and the very strong 1"+_1#->#0"+_1 deexcitation as proton spin-flip 2p_1_/_2#->#2p_3_/_2 transition. (orig.)

2000-01-01

395

Gamow-Teller #beta#-transition from the 2"- ground state of "8"8Rb to the 3"- excited state of "8"8Sr  

International Nuclear Information System (INIS)

The Gamow-Teller #beta#-transition from the ground state 2"- of "8"8Rb to the 3"- level at 2.734 MeV of "8"8Sr is studied. The nuclear matrix element and the log ft value are calculated using complete nuclear wave functions for the initial and final states. It is shown that, contrary to the normal assumption, the component of the final state does give a very important contribution to due to the presence of strong cancellation effects. Although our calculations favour a wave function for the 3"- level "8"8Sr where neutron 1h-1p configurations are not included, there are still some facts which make that our results cannot be taken as conclusive. (orig.).

396

Doppler-free optogalvanic spectroscopy of sup(88,86)Sr I and II  

International Nuclear Information System (INIS)

We have measured the isotope shifts of some dipole transitions between excited states of the even strontium isotopes 88 and 86 by applying the technique of Doppler-free intermodulated optogalvanic spectrocopy to a heat-pipe discharge. We were also able to investigate the isotope shift of the Sr II resonance line at 4216.6 A optogalvanically in the mentioned pair of isotopes. Because the 5 snf"1F_3 series appear to have zero level isotope shifts for n>=6, we can give residual level isotope shifts (RLIS) of several odd-parity states of sup(88,86) Sr I. The RLIS of the 5 snp "1P_1 series show pronounced configuration mixing around n=7. (orig.).

397

Visible (657 nm) InGaP/InAlGaP strained quantum well vertical-cavity surface-emitting laser  

Science.gov (United States)

We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In{sub 0.54}Ga{sub 0.46}P/In{sub 0.48}(Al{sub 0.7}Ga{sub 0.3}){sub 0.52} P strained quantum-well active region and a lattice-matched In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52} P (0.7{le}{ital y}{le}1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al{sub 0.5}Ga{sub 0.5}As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser ...

1992-04-13

398

Solid-state precursor routes to III-V type electronic (13-15) and magnetic (3-15) materials  

Science.gov (United States)

An interest in electronic materials has led me to investigate new synthetic approaches to III-V' type semiconducting (13-15, current IUPAC designation for B and N groups in the Periodic Table) and magnetic (3-15) compounds. It is now possible to prepare binary (GaAs and GdP) and ternary mixed-metal (Al[sub x]Ga[sub 1-x]As) and mixed-pnictide (GaP[sub x]As[sub 1-x]) compounds in seconds from rapid, low-temperature-initiated metathesis reactions between a metal (III) trihalide and a trisodium pnictide, exemplified by MX[sub 3] + Na[sub 3]Pn [yields] MPn + 3 NaX, where M is Al, Ga, In, (Al,Ga), or a lanthanide; X is F, Cl, or I; and Pn is P, As, Sb, or (P,As). The precursors are mixed together in a dry box and ignited by light grinding with a mortar and pestle, or by brief, local heating from a hot filament. These reactions are very exothermic (calculated [Delta]H[sub rxn] ...

1992-01-01

399

Schottky barrier and homojunction gallium arsenide solar cells  

Energy Technology Data Exchange (ETDEWEB)

New techniques were developed to construct Schottky barrier and homojunction solar cells on GaAs substrates. Schottky barrier metal-semiconductor solar cells were produced for the first time on p-type GaAs substrate using a sputter-deposition method to form the barrier. The sputter deposition of gold or gold/palladium is the key to the method since normal thermal evaporation of gold onto p-type GaAs produces ohmic contacts. The results of this investigation are consistent with the idea that sputter damage produces donor type surface states on GaAs. Barrier heights were measured for both p-type sputtered and n-type thermally evaporated diodes using current-voltage and capacitance-voltage methods. Deep-level transient spectroscopy was used to identify the trap center concentration and energy levels for both diodes in an effort to explain the relatively large dark current in the p-type sputtered diodes. ...

1983-01-01

400

Optimization of doubly Q-switched lasers with both an acousto-optic modulator and a GaAs saturable absorber  

Science.gov (United States)

A doubly Q-switched laser with both an acousto-optic (AO) modulator and a GaAs saturable absorber can obtain a more symmetric and shorter pulse with high pulse peak power, which has been experimentally proved. The key parameters of an optimally coupled doubly Q-switched laser with both an AO modulator and a GaAs saturable absorber are determined, and a group of general curves are generated for what we believe is the first time, when the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined, and the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density as well as the influence of the AO Q-switch are considered. These key parameters include the optimal normalized coupling parameter, the optimal normalized GaAs saturable absorber parameters, and the normalized parameters of the AO Q-switch, which can maximize ...

2007-08-20

401

High ion density plasma etching of InGaP, AlInP, and AlGaP in CH{sub 4}/H{sub 2}/Ar  

Science.gov (United States)

High microwave power (1,000 W) electron cyclotron resonance CH{sub 4}/H{sub 2}/Ar discharges produce etch rates for In{sub 0.5}Ga{sub 0.5}P, Al{sub 0.5}In{sub 0.5}P{sub 0.5}, and Al{sub 0.5}Ga{sub 0.5}P of {approximately} 2,000 {angstrom}/min at moderate RF power levels (150 W) and low pressure (1.5 mTorr). This is approximately a factor of five faster than for conventional reactive ion etching conditions where much higher ion energies are necessary. The etched surfaces are smooth over a wide range of CH{sub 4}-to-H{sub 2} ratios and microwave powers. AlInP is more resistant to preferential loss of P from the near-surface during etching than is InGaP. While the etching is ion-driven, pure Ar discharges produce rough surfaces and the CH{sub 4}/H{sub 2} is necessary in the achievement of acceptable morphologies. The InGaAlP/GaAs heterostructure is being increasingly utilized in diode lasers, light ...

1996-03-01

402

Electric-field-dependent electroreflectance spectra of visible-band-gap (InAlGa)P quantum-well structures  

Science.gov (United States)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our ...

1994-04-04

403

Electric-field-dependent electroreflectance spectra of visible-band-gap (InAlGa)P quantum-well structures  

International Nuclear Information System (INIS)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 degree C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6 degree towards P(111)right-angle left-angle 111 right-angle A, consist of nominally undoped MQWs surrounded by doped In_0_._4_9Al_0_._5_1P cladding layers to form p-i-n diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In_0_._4_9Ga_0_._5_1P/In_0_._4_9(Al_0_._5Ga_0_._5)_0_._5_1P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that ...

404

miR-9 and let-7g enhance the sensitivity to ionizing radiation by suppression of NF?B1  

UK PubMed Central (United Kingdom)

The activation of nuclear factor-kappa B1 (NFba;B1) in cancer cells may confer resistance to ionizing radiation (IR). To enhance the therapeutic efficiency of IR in lung cancer, we screened for...Full Text Available

2011-05-31

405

Intrinsic and extrinsic crossluminescence in ionic crystals  

Energy Technology Data Exchange (ETDEWEB)

Intrinsic crossluminescence (CRL) of CsBr, CsCl, and of BaF{sub 2} was investigated with electron-beam and synchrotron radiation excitation. From the CRL spectra, the excitation spectra and the reflectivity, energy level schemes were deduced. Extrinsic CRL was observed changing either the initial (CsCl:Br{sup -}) or the final (RbCl:Cs{sup +}; KCl:Cs{sup +}) state of CRL by doping. (author).

1991-01-01

406

Intrinsic and extrinsic crossluminescence in ionic crystals  

International Nuclear Information System (INIS)

Intrinsic crossluminescence (CRL) of CsBr, CsCl, and of BaF_2 was investigated with electron-beam and synchrotron radiation excitation. From the CRL spectra, the excitation spectra and the reflectivity, energy level schemes were deduced. Extrinsic CRL was observed changing either the initial (CsCl:Br"-) or the final (RbCl:Cs"+; KCl:Cs"+) state of CRL by doping. (author).

1990-09-03

407

Integrated Mined-Area Reclamation and Land-Use Planning. Volume 3E. A Case Study of Surface Mining and Reclamation Planning: Asarco Open Pit Copper Mine, Casa Grande, Arizona.  

Science.gov (United States)

The reports in this series are designed primarily to familiarize professional land use and resource planners with the range of possibilities and effective procedures for achieving integrated mining, reclamation, and land use planning. These reports are ba...

1977-01-01

408

FT-IR spectroscopic studies of fulvic acid from weathered coal and its complexes  

International Nuclear Information System (INIS)

FT-IR spectrum of fulvic acid from wheathered coal of Gongxian is determined using second derivative spectroscopy and the spectroscopic resolution is enhanced. Moreover, FT-IR spectra of the complexes of fulvic acid with Ca"2"+, Ba"2"+, Cu"2"+, Pb"2"+ and UO_2"2"+ under different pH are determined and the nature of the coordination of these complexes is discussed.

1995-01-01

409

Eldroerserosion och Belaeggning av Eldroer: En Litteraturstudie (Gun Barrel Erosion and Coating of Gun Barrels: A Literature Review).  

Science.gov (United States)

Erosion is the main contributing factor to the decrease in lifetime of gun barrels. The precision, muzzle velocity and fire range deteriorate when the surface inside the gun tube is eroded. This study deals with gun barrel material, what happens in the ba...

2002-01-01

410

EPA (ENVIRONMENTAL PROTECTION AGENCY) UTILITY FGD (FLUE GAS DESULFURIZATION) SURVEY. VOLUME I. CATEGORICAL SUMMARIES OF FGD SYSTEMS  

Science.gov (United States)

The report is the first full compilation (not a supplement) since the October-December 1980 report (PB81-187783). Because the next three reports are to be supplements, this issue should be retained for reference throughout the year. The report, generated by a computerized data ba...

411

Dynamic models of staged gasification processes. Documentation of gasification simulator; Dynamiske modeller a f trinopdelte forgasningsprocesser. Dokumentation til forgasser simulator  

Energy Technology Data Exchange (ETDEWEB)

In connection with the ERP project 'Dynamic modelling of staged gasification processes' a gasification simulator has been constructed. The simulator consists of: a mathematical model of the gasification process developed at Technical University of Denmark, a user interface programme, IGSS, and a communication interface between the two programmes. (BA)

2005-02-15

412

Analysis of high-temperature superconducting films by x-ray fluorescence analysis  

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence analysis was used for the determination of Cu, Y and Ba in very thin high-temperature superconducting films. The precision of the method is better than 3% for about 1 #mu#m thick films. The atomic emission ICP spectrometry was used to testify results of XRF analysis. An acceptable agreement of both methods was obtained. (author) 4 refs.; 2 tabs.

1991-09-01

413

Tumour affinity of [sup 203]Pb-chloride: comparison with [sup 67]Ga-citrate and [sup 201]Tl-chloride  

Energy Technology Data Exchange (ETDEWEB)

[sup 203]Pb-chloride is a promising imaging agent for tumour scanning because of the large retention value for tumour tissue and the small value for normal organs, but the large value for the kidneys and bone is a shortcoming. The retention value of [sup 203]Pb in tumour tissue is larger than that of [sup 201]Tl and smaller than that of [sup 67]Ga. The tumour/inflammatory lesion retention ratio for [sup 203]Pb is very large in comparison with those for [sup 67]Ga and [sup 201]Tl. [sup 203]Pb accumulates to a large extent in viable tumour tissue, and less in necrotic tumour tissue and in inflammatory lesion. (author).

1994-01-01

414

Temperature and time-dependence of the elastic moduli of Pu and Pu-Ga alloys  

International Nuclear Information System (INIS)

In previous work, on cooling from 300 K to 10 K the elastic moduli for both #alpha#- and #delta#-Pu dropped 30%. This large change may reflect effects of 5f-electron localization. In this work, the elastic moduli at ambient temperature of several Pu-Ga alloys were measured using resonant ultrasound spectroscopy (RUS). The strong temperature dependence of the bulk and shear modulus and the temperature independence of Poisson's ratio was confirmed and the upper temperature limit for #alpha#-Pu was extended to 360 K. Measurements of the time dependence of the shear moduli of Pu and Pu-2.36 at.% Ga were determined with high precision as a function of time and temperature. Using a model for time dependence of point defects, we determined the exponential time constant at ambient temperature for such variations. The low temperature results are consistent with Fluss .

2007-10-11

415

Studies on the superconducting properties of A-15 type intermetallic compounds  

International Nuclear Information System (INIS)

The influence of 3d-transition metal impurities on the superconducting properties of the A-15 compounds V_3Si and V_3Ga have been investigated. In the case of V_3Si, the Fe impurities replacing V were found to have a local moment. A compensation effect was found in this case, resulting in a 20KOe increase in the upper critical field at dilute concentrations of Fe. It was demonstrated that long range order V_3Ga possessed higher transition temperature and upper critical field than found hitherto. Investigations on Nb_3Ge/sub 1-x/Ga/sub x/ films obtained by chemical vapor deposition has clearly shown the relation between the transition temperature and structural characteristics. The influence of generalized defects on the superconducting properties in A-15 type Nb_3X compounds has been discussed.

416

Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis  

International Nuclear Information System (INIS)

We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence '' hot '' implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900"oC up to 20-90 nm in those annealed at 1100"oC. For the samples annealed at 900"oC a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed. (author)

2011-07-01

417

Single phase polycrystalline metastable (GaSb)/sub 1-x/Ge/sub x/ alloys from annealing of amorphous mixtures: Ion mixing effects during deposition  

International Nuclear Information System (INIS)

Low energy (<100 eV) Ar"+ ion bombardment of the growing film during the deposition of amorphous GaSb+Ge mixtures was found to affect both the transformation rate kinetics as well as the reaction path during subsequent annealing. Ion bombardment induced collisional cascades resulted in more random mixing in the growing films thus retarding the rate of the amorphous to equilibrium state phase transformation during annealing and allowing the formation of homogeneous metastable randomly oriented single phase (GaSb)/sub 1-x/Ge/sub x/ alloys. The films were approx.1.5 #mu#m thick and the average grain size in the metastable state was approx.300 A.

6180-01-01

418

Photoluminescences from Al{sub x}Ga{sub 1{minus}x}P liquid phase epitaxial layers  

Science.gov (United States)

Homogenous Al{sub x}Ga{sub 1{minus}x}P liquid phase epitaxial layers have been obtained with the temperature difference method under controlled vapor pressure (TDM-CVP). Very clear fine structures near band edge in photoluminescence spectra have been observed at 77 K for the first time. Photoluminescence measurement results confirmed that the free exciton recombination without phonon assistance plays an important role in the luminescence at 77 K and becomes dominant at room temperature. It is considered that Zero-phonon assisted free exciton recombination is intensified by some local perturbations to electrical potentials against carriers or excitons introduced by Al atoms in Al{sub x}Ga{sub 1{minus}x}P layers, which can give momentum change necessary for recombination.

1999-10-01

419

Observation of strain-enhanced electron-spin polarization in photoemission from InGaAs  

International Nuclear Information System (INIS)

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

420

Microscopic Origin of the Phenomenological Equilibrium ''Doping Limit Rule'' in n -Type III-V Semiconductors  

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

2000-02-07

421

Metastable one- and two-electron donor states in GaAs and CdF{sub 2}  

Energy Technology Data Exchange (ETDEWEB)

The strongly localized one-electron (D{sup 0}) and two-electron (D{sup -}) donor states are considered with the lattice deformation around the donor center taken into account. For GaAs, donor energy levels have been calculated as functions of the hydrostatic pressure. The calculated energy positions and pressure coefficients agree with the experimental data. It is shown that the interaction with phonons reduces the probability of radiative transitions between the states of different localization and leads to the metastability of shallow-level donor states with respect to the D{sup -} state in GaAs and both the states (D{sup 0} and D{sup -}) in CdF{sub 2}. (author) 7 refs, 1 fig

1996-12-31

422

MOVPE growth of GaAs and InP based compounds in production reactors using TBAs and TBP  

Energy Technology Data Exchange (ETDEWEB)

Today TBP and TBAs are the compounds which have the highest potential to replace the hydrides arsine and phosphine in the MOVPE process. The authors have demonstrated the entire material system Ga-In-As-P can be grown without any loss of quality using TBP and TBAs not only in one reactor, but in a complete family of reactors. These reactors range from small-scale single wafer R and D reactors to multiwafer Planetary Reactor systems. Both InP based and GaAs based materials could be grown with an excellent quality. Thus all growth processes for III-V devices--long and short wavelength lasers, LEDs, high speed transistors, etc.--can be switched to TBP and TBAs. This will drastically reduce safety hazards and lead to processes that have advantages both from the ecological and economical point of view.

1996-12-31

423

Kramers-Kronig Analysis of Infrared Reflectance Spectra for Quaternary In_xAl_yGa_1_-_x_-_yN Alloy  

International Nuclear Information System (INIS)

In this paper, a Kramers-Kronig (KK) analysis of infrared (IR) reflectance spectrum of quaternary In_0_._0_1Al_0_._0_6Ga_0_._9_3N film grown by molecular beam epitaxy (MBE) is reported. The infrared measurement is performed in the reflection mode at an incident angle of 15 degree sign by Fourier transform infrared (FTIR) spectroscopy at T = 300 K. The Kramers-Kronig analysis of the reflectivity data has been used to obtain the real and imaginary parts of the index of refraction (n and k), and the real and imaginary parts of the dielectric response function (#epsilon#' and #epsilon#') of the materials. Finally, the transverse optical and longitudinal optical phonons for quaternary In_xAl_yGa_1_-_x_-_yN were obtained.

2010-07-07

424

Interface-induced conversion of infrared to visible light at semiconductor interfaces  

International Nuclear Information System (INIS)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.

425

High-performance concentrator tandem solar cells based on IR-sensitive bottom cells  

Energy Technology Data Exchange (ETDEWEB)

Computer simulations of two-junction, concentrator tandem solar cell performance show that IR-sensitive bottom cells are required to achieve high efficiencies. Based on this conclusion, two novel concentrator tandem designs are under investigations: (1) a mechanically stacked, four-terminal GaAs/GaInAsP (0.95 eV) tandem, and (2) a monolithic, lattice-matched, three-terminal InP/GaInAs tandem. In preliminary experiments, terrestrial concentrator efficiencies exceeding 30% have been achieved with each of the above tandem designs. Methods for improving the efficiency of each tandem type are discussed. (orig.).

1991-05-01

426

High power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy  

Science.gov (United States)

AlGaInP-based quantum-well laser diodes operating at wavelengths near 680 nm have been grown by all solid source molecular beam epitaxy (SSMBE). The lowest room temperature threshold current densities obtained from shallow rid structures were 300 A/cm{sup 2} and 330 A/cm{sup 2} for pulsed and continuous wave operation, respectively. The dependences of the differential quantum efficiency and threshold current density on the cavity length were also studied in this preliminary SSMBE work. The internal quantum efficiency of 87--89% and the internal losses of 7--10 cm{sup {minus}1} were obtained.

1996-03-01

427

Generation and relaxation of microstrains in GaN nanocrystals under extreme pressures  

International Nuclear Information System (INIS)

Nanocrystalline powders of GaN with grain sizes ranging from 2 to 30 nm were examined under high external pressures by in situ diffraction techniques in a diamond anvil cell at DESY (HASYLAB, Station F3). The experiments on densification of pure powders under high pressure were performed without a pressure medium. The mechanism of generation and relaxation of internal strains and their distribution in nanoparticles was deduced from Bragg reflections recorded in situ under high pressures at room temperature. The microstrain was calculated from the full-width at half-maximum (FWHM) values of the Bragg lines. It was found that microstrains in GaN crystallites are generated and subsequently relaxed by two mechanisms: generation of stacking faults and change of the size and shape of the grains occurring under external stress. (author)

2001-09-23

428

Dynamic Model Updating Using Particle Swarm Optimization Method  

CERN Document Server

This paper proposes the use of particle swarm optimization method (PSO) for finite element (FE) model updating. The PSO method is compared to the existing methods that use simulated annealing (SA) or genetic algorithms (GA) for FE model for model updating. The proposed method is tested on an unsymmetrical H-shaped structure. It is observed that the proposed method gives updated natural frequencies the most accurate and followed by those given by an updated model that was obtained using the GA and a full FE model. It is also observed that the proposed method gives updated mode shapes that are best correlated to the measured ones, followed by those given by an updated model that was obtained using the SA and a full FE model. Furthermore, it is observed that the PSO achieves this accuracy at a computational speed that is faster than that by the GA and a full FE model which is faster than the SA and a full FE model.

2007-01-01

429

Diffuse X-ray scattering study of sublattice ordering among group III atoms in In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P  

International Nuclear Information System (INIS)

The intensity of superstructure reflections and associated diffuse scattering from In_0_._5Ga_0_._5P and In_0_._5Al_0_._5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies. (orig.).

430

Adhesion studies of Au films on GaAs using ion-assisted deposition techniques  

International Nuclear Information System (INIS)

This paper reports on a series of experiments performed to examine the ability of ion beam assisted thermal deposition to produce good adhesion of Au metallization on GaAs left-angle 100 right-angle substrates. A study of the influence of Ar ion-assisted thermal deposition of the Au films as well as in situ pre-sputtering of the GaAs surface with low-energy Ar ions prior to thermal deposition, shows that strong adhesion can be achieved without resorting to chemical cleaning. The substrate temperature and the relative flux of Ar ions to incident Au atoms were varied in order to correlate these parameters with film adhesion. The interfaces of films processed under these various conditions were examined by XTEM, RBS and XPS. Orientation texture was studied by x-ray diffraction (XRD).

431

5 GHz GaAs monolithic astable multivibrator type voltage controlled oscillator  

Science.gov (United States)

A 5 GHz GaAs monolithic astable multivibrator-type voltage-controlled oscillator has been developed. The monolithic oscillator uses 2 micron long self-aligned TiW-silicide gate MESFETs as well as GaAs Schottky diodes for capacitance. Good agreement between the experiment and calculations for oscillation frequency characteristics versus control voltage is obtained by assuming donor density in the FET active layer to be a Gaussian distribution. This oscillator is useful for monolithic front ends and phase-locked oscillators used in microwave signal processing. X-band oscillation frequency can be obtained with 1 micron long gate FET and low loss resonance inductors.

1984-03-01

432

Thermodynamics and stability of the mixed-conducting Sr-Fe-Co-O system.  

Energy Technology Data Exchange (ETDEWEB)

Mixed-conducting Sr-Fe-Co oxides have potential applications in dense ceramic membranes for high-purity oxygen separation and/or methane conversion to produce syngas (CO + H{sub 2}), because of their combined high electronic/ionic conductivity and significant oxygen permeability. We studied the crystal structure and microstructure of the system in X-ray diffraction experiments and by using scanning electron microscopy, respectively. Thermogravimetric analysis was conducted on the SrFeCo{sub 0.5}O{sub x} sample in environments of various oxygen partial pressures (pO{sub 2}). Conductivity increased while weight decreased with increasing temperature. Activation energy decreased while conductivity increased with increasing pO{sub 2}. The pO{sub 2}-dependent conducting behavior of the SrFeCo{sub 0.5}O{sub x} system can be understood by considering the trivalent-to-divalent transition of transition-metal ions.

1999-04-28

433

Subcellular distribution of ryanodine receptors in the cardiac muscle of carp (Cyprinus carpio).  

Science.gov (United States)

We examined the subcellular localization of ryanodine receptors (RyR) in the cardiac muscle of carp using biochemical, immunohistochemical, and electron microscopic methods and compared it with those of rats and guinea pigs. To achieve this goal, an anti-RyR antibody was newly raised against a synthetic peptide corresponding to an amino acid sequence that was conserved among all sequenced RyRs. Western blot analysis using this antibody detected a single RyR band following the SDS-PAGE of sarcoplasmic reticulum (SR) membranes from carp atrium and ventricle as well as from mammalian hearts and skeletal muscles. The carp heart band had slightly greater mobility than those of mammalian hearts. Although immunohistochemical staining showed evident striations corresponding to the Z lines in longitudinal sections of mammalian hearts, clusters of punctate staining, in contrast, were distributed ubiquitously throughout carp atrium and ventricle. Electron microscopic images ...

2003-06-12

434

SARCOLEMMAL INVAGINATIONS CONSTITUTING THE T SYSTEM IN FISH MUSCLE FIBERS  

UK PubMed Central (United Kingdom)

Striated muscle fibers from the body and tail myotomes of a fish, the black Mollie, have been examined with particular attention to the sarcoplasmic reticulum (SR) and transverse tubular (or T) system....Full Text Available

1964-09-01

435

Radio-frequency optical double-resonance spectrum of SrF: the X/sup 2/. sigma. /sup +/ state  

Energy Technology Data Exchange (ETDEWEB)

The isotropic and anisotropic hyperfine constants of the ground X/sup 2/..sigma../sup +/ state of /sup 88/SrF and /sup 86/SrF are reported. Vibrational and rotational dependences are studied in a Dunham expansion analysis. Furthermore, the vibrational, rotational, and isotopic dependence of the spin-rotation constant is determined. The following values are obtained for X/sup 2/..sigma../sup +/, ..nu.. = 0, in /sup 88/SrF: ..gamma../sub 0/ = 74.79485 MHz, ..gamma../sub 1/ = 5.752 x 10/sup -5/ MHz, ..gamma../sub 2/ = -6.3 x 10/sup -10/ MHz, b/sub 0/ = 97.0834 MHz, b/sub 1/ = -3.300 x 10/sup -4/ MHz, c/sub 0/ = 30.268 MHz, C/sub I/ = 0.00230 MHz, where ..gamma.. is the spin-rotation parameter, b and c are the Frosch and Foley hyperfine parameters, and C/sub I/ is a nuclear spin-rotation correction. 4 figures, 4 tables.

1981-01-01

436

Nuclear data sheets update for A = 101  

Science.gov (United States)

The 1985 evaluation of A = 1-1 (85B1114) has been revised. Experimental information is presented from the neutron-rich {sup 101}Sr to the neutron-deficient {sup 101}In.

1991-06-01

437

Nuclear data sheets update for A = 101  

International Nuclear Information System (INIS)

The 1985 evaluation of A = 1-1 (85B1114) has been revised. Experimental information is presented from the neutron-rich "1"0"1Sr to the neutron-deficient "1"0"1In.

439

Ground-state properties of exotic nuclei near Z=40 in the relativistic mean-field theory  

International Nuclear Information System (INIS)

Study of the ground-state properties of Kr, Sr and Zr isotopes has been performed in the framework of the relativistic mean-field (RMF) theory using the recently proposed relativistic parameter set NL-SH. It is shown that the RMF theory provides an unified and excellent description of the binding energies, isotope shifts and deformation properties of nuclei over a large range of isospin in the Z=40 region. It is observed that the RMF theory with the force NL-SH is able to describe the anomalous kinks in isotope shifts in Kr and Sr nuclei, the problem which has hitherto remained unresolved. This is in contrast with the density-dependent Skyrme-Hartree-Fock approach which does not reproduce the behaviour of the isotope shifts about shell closure. On the Zr chain we predict that the isotope shifts exhibit a trend similar to that of the Kr and Sr nuclei. The RMF theory also predicts shape coexistence in heavy ...

440

GeneSrF and varSelRF: a web-based tool and R package for gene selection and classification using random forest  

UK PubMed Central (United Kingdom)

BackgroundMicroarray data are often used for patient classification and gene selection. An appropriate tool for end users and biomedical researchers should combine user friendliness...Full Text Available

441

Enantioselective Fluorescent Recognition of Chiral Acids by Cyclohexane-1,2-diamine-Based Bisbinaphthyl Molecules  

UK PubMed Central (United Kingdom)

The cyclohexane-1,2-diamine-based bisbinaphthyl macrocycles (S)-/(R)-5 and their cyclic and acyclic analogs are synthesized. The interactions of...Full Text Available

2007-06-22

443

Data Collection Platforms in Ohio  

Science.gov (United States)

AT AFRICA (O.F.) AIDO1 SYMMES CREEK AT AID ALLO1 MAHONING RIVER AT ALLIANCE ALZO1 ALEXANDRIA AMDO1 AMSTERDAM ARMO1 CAPTINA CREEK AT SR 148 AT ARMSTRONG MILLS ASVO1 WALNUT CREEK...

2011-10-07

444

Conditioning of plastic wastes for thermal utilization; Aufbereitung von Kunststoffabfaellen zur thermischen Verwertung  

Energy Technology Data Exchange (ETDEWEB)

This article describes the processes for the treatment of plastic waste: sampling, sorting, comminution. The requirements for the different processes for waste treatment (as recycling, utilization as raw material, energy recovery, combustion) are listed. (SR)

1996-12-31

446

Abnormalities in the microsomal oxidases of the WHO standard reference strain of Musca domestica*  

UK PubMed Central (United Kingdom)

Observations made during biochemical and toxicological studies of the housefly, in which the WHO standard reference (SR) strain was used as a standard, indicated that this strain differs from other...Full Text Available

1975-01-01

447

A novel photodiode made of hybrid organic/inorganic nanocomposite  

International Nuclear Information System (INIS)

Novel hybrid organic/inorganic nanocomposites made of metal oxide and conjugated polymer nanocomposite and its application in bulk-heterojunction solar cells were studied. The composite was composed of different concentrations of strontium titanate (SrTiO_3) and polyaniline doped phosphoric acid. The optimum concentration of strontium titanate was found to be 0.2 v/v. An inorganic-organic photovoltaic device with a structure of Ag/Pani-H_3PO_4-SrTiO_3/Al has been fabricated. The ideality factor value of the diode was found to be 1.8. This n value of the diode implies a deviation from ideal junction behaviour. The barrier height #phi#_b value for the diode was found to be 0.56 eV. The Ag/Pani-H_3PO_4-SrTiO_3/Al diode shows a photovoltaic behaviour with a maximum open-circuit voltage V_o_c of 2.49 V, and short-circuit current I_s_c of 5.6 mA under light illumination #lambda# = 460 nm. The conversion efficiency was found to be ...

2009-08-07

448

Use of X-ray fluorescence analysis in the study of archeological samples  

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence analysis (XFA) was used in the determination of the contents of metal residues in dosing plates for coin minting. XFA was also used for the determination of the strontium/calcium ratio in bone samples of different animals with the aim to obtain information on the food composition of these animals. It was found that bones of different animals can be distinguished based on the Sr/Ca ratio. No significant differences in the Sr/Ca ratio were observed in human bones of individuals from different social groups. (author). 1 fig., 5 tabs., 4 refs.

1988-09-26

449

Ultrasensitive laser isotope analysis in an ion-storage ring  

Energy Technology Data Exchange (ETDEWEB)

We propose a novel method for ultrasensitive isotope analysis that combines magnetic mass selection, resonant charge-exchange neutralization, and resonant laser ionizaion. Our method attains high isotopic abundance selectivity by means of continuous multistage separation of ions stored in a small ring. For the environmentally interesting case of /sup 90/Sr versus /sup 88/Sr we estimate that sensitivity better than 10/sup -15/ for a throughput of 10/sup 13/ atoms/sec and an efficiency (after the ion source) greater than 10% are readily achievable.

1985-09-01

450

Study on the use of zirconium phosphate for radioactive waste treatment  

International Nuclear Information System (INIS)

Zirconium phosphate was one of the earliest inorganic ion-exchange suggested for removing strontium and cesium from aqueous nuclear waste. This paper studied ionic exchange to remove Cs-137 and Sr-90 by using different cationic of zirconium phosphate. In this case the parameters studied were the effect of temperature and ion concentration to percent up take and distribution coefficients. It is also conducted the study on column experiments to determine the breakthrough curves for Cs-137 and Sr-90. The result showed the potential of use of zirconium phosphate in radioactive waste treatment. (author)

1998-12-01

451

Rb-Sr age of the Sundsta granite in the Western Pregothian tectonic mega-unit, south-western Sweden  

Energy Technology Data Exchange (ETDEWEB)

The Sundsta granite is a reddish, acidic granite, situated in the Western Pregothian mega-unit in Vaermland, south-western Sweden. Its Rb-Sr whole-rock age is 1566+-39 Ma with an initial ratio 0f 0.705 +-0.003. The region is dominated by grey, migmatized granitoids presumably belonging to the Aamaal-I group which has ages of 1650-1700 Ma. The marked difference in degree of migmatization between these two rock-units may indicate that the intrusion of the Sundsta granite post-dates the main migmatization phase of the Aamaal-I granitoid in this region.

1982-10-25

452

Radiostrontium in milk and tap water. Appendix D  

International Nuclear Information System (INIS)

Results of monitoring milk and tap water in New York City are presented. The New York City sample is a monthly composite of pasteurized milk purchased daily at retail stores. The monthly "9"0Sr to calcium ratios for New York City since the inception of the sampling program in 1954 are presented. Samples of New York City tap water are taken daily, so that by the end of the month, approximately 100 liters have been collected. The available cesium-137 data expressed as the "1"3"7Cs to "9"0Sr ratio are also given.

1980-01-01

453

Quenching of the electron scattering form factor of the 1/sup +/ state at 3. 48 MeV in /sup 88/Sr and the influence of the. delta. (1232)-isobar  

Energy Technology Data Exchange (ETDEWEB)

The form factor for excitation of the 1/sup +/ state at 3.48 MeV in /sup 88/Sr by inelastic electron scattering has been measured for momentum transfers q = 0.24-0.62 fm/sup -1/. Neither its magnitude nor shape can be described employing the best available nuclear wave functions. We demonstrate with a schematic model that the observed reduction of the form factor may be understood by taking into account a renormalization of the M1-operator due to virtual ..delta..-hole excitations.

1982-04-01

454

Quenching of the electron scattering form factor of the 1"+ state at 3.48 MeV in "8"8Sr and the influence of the #DELTA#(1232)-isobar  

International Nuclear Information System (INIS)

The form factor for excitation of the 1"+ state at 3.48 MeV in "8"8Sr by inelastic electron scattering has been measured for momentum transfers q = 0.24-0.62 fm"-"1. Neither its magnitude nor shape can be described employing the best available nuclear wave functions. We demonstrate with a schematic model that the observed reduction of the form factor may be understood by taking into account a renormalization of the M1-operator due to virtual #DELTA#-hole excitations. (orig.).

455

Production of Group IIA atomic and molecular negative ion beams in a cesium-sputter negative ion source  

Energy Technology Data Exchange (ETDEWEB)

The results of an investigation on the production of Group IIA atomic and molecular negative ion beams formed in a cesium-sputter negative ion source are presented. The sputtering material was formed by pressing pellets of stoichiometric mixtures of the Group IIA element carbonates and 10% copper powder. Negative ions of several alkaline-earth elements and their oxides have been observed. Beam intensities as high as 180 pA have been observed for Sr{sup -}and 20 nA for SrO{sup -}. (orig.).

1996-09-11

456

Production of Group IIA atomic and molecular negative ion beams in a cesium-sputter negative ion source  

International Nuclear Information System (INIS)

The results of an investigation on the production of Group IIA atomic and molecular negative ion beams formed in a cesium-sputter negative ion source are presented. The sputtering material was formed by pressing pellets of stoichiometric mixtures of the Group IIA element carbonates and 10% copper powder. Negative ions of several alkaline-earth elements and their oxides have been observed. Beam intensities as high as 180 pA have been observed for Sr"-and 20 nA for SrO"-. (orig.).

1996-09-01

457

Photoluminescence and cathodoluminescence properties of Tb3+ activated Sr3AlO4F emitting-color tunable phosphor  

British Library Electronic Table of Contents (United Kingdom)

Tb3+-activated Sr3AlO4F phosphors were synthesized by a high-temperature solid-state reaction method. The investigation of photoluminescence and cathodoluminescence indicates that these phosphors can be effectively excited by ultraviolet light and low-voltage electron beam. The phosphors exhibit a tunable-green emission. The luminescence behaviors are explained by the site occupancy of Tb3+ ions in the host crystal and the cross-relaxation of 5D3 to 5D4 state.

2011-01-01

458

Photoluminescence and cathodoluminescence properties of Tb3+ activated Sr3AlO4F emitting-color tunable phosphor  

Science.gov (United States)

Tb3+-activated Sr3AlO4F phosphors were synthesized by a high-temperature solid-state reaction method. The investigation of photoluminescence and cathodoluminescence indicates that these phosphors can be effectively excited by ultraviolet light and low-voltage electron beam. The phosphors exhibit a tunable-green emission. The luminescence behaviors are explained by the site occupancy of Tb3+ ions in the host crystal and the cross-relaxation of 5D3 to 5D4 state.

2011-03-01

459

Phase separation, transport and magnetic properties of La2/3A1/3Mn1-xCoxO3, A=Ca, Sr (0.5x1)  

British Library Electronic Table of Contents (United Kingdom)

We present the low-temperature physical properties of the polycrystalline perovskite systems La2/3A1/3Mn1-xCoxO3, A=Ca, Sr (0.5x1) including electrical resistance, magnetization, ac and dc susceptibilities. The experimental data suggest the presence of correlated ferromagnetic clusters embedded in some non-ferromagnetic matrix. The systems show semiconducting behavior and negative magnetoresistance.

2008-01-01

460

Neutron transition multipole moment for /sup 88/Sr(#alpha#,#alpha#')/sup 88/Sr (2"+, 1.84 MeV)  

International Nuclear Information System (INIS)

The neutron transition multipole moment, M/sub n/, for (0"+#->#2"+, 1.84 MeV) transition is inferred by measuring the (#alpha#,#alpha#') angular distribution at E/sub #alpha#/ = 50 MeV and comparing it with a microscopic distorted-wave Born approximation calculation. Proton transition densities are taken from electron scattering data. M/sub n//M/sub p/ is found to be substantially less than N/Z in agreement with the (p,p') result.

461

Measurements of "8"8Sr(p,n) to the ground state and low-lying excited states of "8"8Y  

International Nuclear Information System (INIS)

The (p,n) cross section on "8"8Sr was measured for proton energies between 5.75 and 11 MeV. Overall resolution was sufficient to separate the "8"8Y ground state (J/sup #pi#/ = 4"-), the first excited state (J/sup #pi#/ = 5"-) at 0.232 MeV, and the second excited state (J/sup #pi#/ = 1"+) at 0.393 MeV. A Legendre polynomial fit was made to the angular distributions and the resulting integrated cross sections are shown. 1 figure.

1980-03-13

462

Measurement of the K-shell ionization probability across a wide resonance: /sup 88/Sr(p,p/sub 0/) at 6. 06 MeV  

Energy Technology Data Exchange (ETDEWEB)

We have measured the K-shell ionization probability across the 6.06-MeV resonance in /sup 88/Sr(p,p/sub 0/) where the resonance width is large compared to the energy transferred to the electron. The results are found to agree quantitatively with the theory developed by Blair and Anholt. The effect of the time delay on the ionization probability, introduced by the nuclear scattering at the resonance energy, is discussed.

1982-09-01

463

Identification of elements in plant drugs and their water infusion using X-ray fluorescence analysis  

International Nuclear Information System (INIS)

The present work gives preliminary results of analysis of drug mixtures (NEPHROSAL tea bag) and its water infusion. In a sample of dried drugs the elements K, Ca, Mn, Fe, Ni, Cu, Zn, Br, Rb, Sr, Pb were identified, whereas in their water infusion only Ca, Mn, Zn and Sr were found. The method applied was radionuclide X-ray fluorescence analysis using a radionuclide source "1"0"9Cd, a Si/Li semiconductor detector and a multichannel analyzer Canberra 8100. (author) 6 refs.; 3 figs.

8100-01-01

464

High temperature crystalline superconductors from crystallized glasses  

Energy Technology Data Exchange (ETDEWEB)

A method of preparing a high temperature superconductor from an amorphous phase. The method involves preparing a starting material of a composition of Bi.sub.2 Sr.sub.2 Ca.sub.3 Cu.sub.4 Ox or Bi.sub.2 Sr.sub.2 Ca.sub.4 Cu.sub.5 Ox, forming an amorphous phase of the composition and heat treating the amorphous phase for particular time and temperature ranges to achieve a single phase high temperature superconductor.

1992-01-01

465

Generator coordinate method for triaxial quadrupole collective dynamics in strontium isotopes  

Energy Technology Data Exchange (ETDEWEB)

We discuss the algebraic structure of the generator coordinate method for triaxial quadrupole collective motion. The collective solutions are classified according to the representations of the permutation group of the intrinsic axes. Our method amounts to an approximate angular-momentum projection. We apply it to a study of the spherical-to-deformed-shape transition in light even strontium isotopes {sup 78-88}Sr. We find that triaxial configurations play a significant role in explaining the structure of the transitional isotopes {sup 80-82}Sr. (orig.).

1991-07-29

466

Excitation of the 2_1"+ and 2_2"+ states in the "8"8Sr(p,p') reaction at 25 and 31 MeV: A look behind the nuclear surface  

International Nuclear Information System (INIS)

Data for the excitation of the 2_1"+ and 2_2"+ states in the "8"8Sr(p,p') reaction at 25 and 31 MeV indicate sustantial contributions from the interior of the nucleus, Microscopic DWBA calculations reproduce this and yield a fair description of the data. A detailed description, especially of the 2_2"+ state, is sensitive to the effective nucleon-nucleon interaction used and the non-locality of the optical potential, which are insufficiently known at present. (orig.).

467

Excitation of the 2/sub 1//sup +/ and 2/sub 2//sup +/ states in the /sup 88/Sr(p,p') reaction at 25 and 31 MeV: A look behind the nuclear surface  

Energy Technology Data Exchange (ETDEWEB)

Data for the excitation of the 2/sub 1//sup +/ and 2/sub 2//sup +/ states in the /sup 88/Sr(p,p') reaction at 25 and 31 MeV indicate sustantial contributions from the interior of the nucleus, Microscopic DWBA calculations reproduce this and yield a fair description of the data. A detailed description, especially of the 2/sub 2//sup +/ state, is sensitive to the effective nucleon-nucleon interaction used and the non-locality of the optical potential, which are insufficiently known at present.

1986-07-03

468

Excitation of 1/sup +/ states in /sup 88/Sr by proton inelastic scattering  

Energy Technology Data Exchange (ETDEWEB)

In a (p,p') study of /sup 88/Sr at Esub(p) = 201 MeV both a large resonance centered at 9.4 MeV excitation energy and the known 1/sup +/ state at 3.486 MeV are excited. Several discrete states are observed in the resonance. The cross section of the whole resonance is 27% of a simple particle-hole prediction. The strength of the low-lying 1/sup +/ state is only about 15% of that calculated from a wave function including core-polarization contributions, whereas (e,e') scattering finds about 50%.

1985-06-10

469

Excitation of 1"+ states in "8"8Sr by proton inelastic scattering  

International Nuclear Information System (INIS)

In a (p,p') study of "8"8Sr at Esub(p) = 201 MeV both a large resonance centered at 9.4 MeV excitation energy and the known 1"+ state at 3.486 MeV are excited. Several discrete states are observed in the resonance. The cross section of the whole resonance is 27% of a simple particle-hole prediction. The strength of the low-lying 1"+ state is only about 15% of that calculated from a wave function including core-polarization contributions, whereas (e,e') scattering finds about 50%. (orig.).

470

Electro-excitation of the 1/sup +/ state at Esub(x)= 3. 486 MeV in /sup 88/Sr  

Energy Technology Data Exchange (ETDEWEB)

The differential cross section for excitation of the 1/sup +/ state at Esub(x)=3.486 MeV in /sup 88/Sr by inealstic electron scattering has been measured for values of the momentum transfer q between 0.22 and 2.57 fm/sup -1/. Both nuclear core polarization and ..delta..-hole polarization seem to be necessary to describe the observed reduction of the B(M1) value and data at low q and the behaviour of the cross section at intermediate values of q. 42 references.

1984-07-23

471

Electro-excitation of the 1/sup +/ state at 3,486 MeV in /sup 88/Sr  

Energy Technology Data Exchange (ETDEWEB)

The form factor for excitation of 1/sup +/ state at 3.846 MeV in /sup 88/Sr by inelastic electron scattering has been measured for q=0.22-2.57 fm/sup -1/. Both nuclear core polarization and ..delta..-hole polarization seem to be necessary to describe the observed reduction of the B(M1)-value and data at low q and the peculiar shape of the form factor at intermediate values of q.

1984-03-01

472

Electro-excitation of the 1"+ state at Esub(x)= 3.486 MeV in "8"8Sr  

International Nuclear Information System (INIS)

The differential cross section for excitation of the 1"+ state at Esub(x)=3.486 MeV in "8"8Sr by inealstic electron scattering has been measured for values of the momentum transfer q between 0.22 and 2.57 fm"-"1. Both nuclear core polarization and #DELTA#-hole polarization seem to be necessary to describe the observed reduction of the B(M1) value and data at low q and the behaviour of the cross section at intermediate values of q. (orig.).

473

Effect of chlordecone (kepone) on calcium transport mechanisms in rat heart sarcoplasmic reticulum  

Energy Technology Data Exchange (ETDEWEB)

Since chlordecone (Kepone, CD) interferes with cardiac Na{sup +} ion translocases, we have studied CD effects on cardiac SR calcium pump activity. SR was isolated from heart ventricles of male Sprague-Dawley rats. Cardiac SR Ca{sup 2+}-ATPase, {sup 45}Ca-uptake and cAMP as well as calmodulin (CaM) dependent protein phosphorylation were measured. Ca{sup 2+}-ATPase was differentiated into low affinity and high affinity forms by measuring the activity using 50 and 0.7 {mu}M free Ca{sup 2+} respectively. CD in vitro inhibited {sup 45}Ca-uptake by SR in a concentration dependent manner with an IC50 value of 7 {mu}M and SR {sup 45}Ca-uptake was totally inhibited at 20-30 {mu}M CD. In agreement with this, both high affinity and low affinity Ca{sup 2+}-ATPases, which are involved in Ca{sup 2+} transport across membranes, were also inhibited by CD in a concentration dependent manner with ...

1990-01-01

474

E2 transition densities and proton shell structure in /sup 88/Sr, /sup 89/Y, and /sup 90/Zr  

Energy Technology Data Exchange (ETDEWEB)

Electron scattering data have been used to obtain transition charge densities for the low-lying E2 transitions in /sup 88/Sr, /sup 89/Y, and /sup 90/Zr. These charge densities show a characteristic shape indicative of their microscopic constituency, modified by core-polarization effects. A good description of transitions in the even-even nuclei is obtained by using the measured single-particle transitions in /sup 89/Y as effective densities. .ID LV2086 .PG 19 22

1983-01-03

475

Determination of the #pi#1g/sub 9/2/ orbit size in "8"8Sr, "9"0Zr, and "9"2Mo from inelastic electron scattering  

International Nuclear Information System (INIS)

A study of the #pi#1g/sub 9/2/ orbit size in "8"8Sr, "9"0Zr, and "9"2Mo is presented. The rms radius for the point-proton density is extracted by studying transitions to 8"+ states in these nuclei. The radii are consistently larger than a value determined in a magnetic electron scattering experiment on "9"3Nb. A qualitative discussion of the ground state occupation of the #pi#1g/sub 9/2/ orbit based on the transition amplitudes to the 8"+ states is given.

476

Collective charge excitation of Sr_1_4_-_xCa_xCu_2_4O_4_1. A fingerprint of novel charge ordered state?  

International Nuclear Information System (INIS)

We review recent progress on experimental studies of collective charge excitations in hole-doped spin ladder system Sr_1_4_-_xCa_xCu_2_4O_4_1, focusing on anomalous features of phase excitation. We also discuss possible candidates for related charge ordered state, together with a controversial issue of the hole density transferred from spin chain layers to spin ladder layers. (author)

2007-04-01

477

Decontamination of cesium, strontium, and cobalt from aqueous solutions by bentonite  

Energy Technology Data Exchange (ETDEWEB)

Sorption studies of cesium, strontium, and cobalt (Cs, Sr, and Co) on bentonite under various experimental conditions, such as contact time, pH, sorbent and sorbate concentration, and temperature, have been performed. The sorption data for all these metals have been interpreted in terms of Freundlich, Langmuir, and Dubinin-Radushkevich equations. Thermodynamics parameters, such as heat of sorption {Delta}H{degrees}, free energy change {Delta}G{degrees}, and entropy change {Delta}S{degrees}, for the sorption of these metals on bentonite have been calculated. The value of {Delta}H{degrees} shows that the sorption of Cs was exothermic, while the sorption of Sr and Co on bentonite were endothermic in nature. The value of {Delta}G{degrees} for their sorption was negative, showing the spontaneity of the process. The maximum loading capacity of Cs, Sr, and Co were 75.5, 22, and 27.5 meq, respectively, for 100 g of bentonite. The ...

1996-12-31

478

Chemical evolution of formation waters in the Palm Valley gas field, Northern Territory  

International Nuclear Information System (INIS)

The chemical composition and evolution of formation waters associated with gas production in the Palm Valley field, Northern Territory, has important implications for reservoir management, saline water disposal, and gas reserve calculations. Historically, the occurrence of saline formation water in gas fields has been the subject of considerable debate. A better understanding of the origin, chemical evolution and movement of the formation water at Palm Valley has important implications for future reservoir management, disposal of highly saline water and accurate gas reserves estimation. Major and trace element abundance data suggest that a significant component of the highly saline water from Palm Valley has characteristics that may have been derived from a modified evaporated seawater source such as an evaporite horizon. The most dilute waters probably represent condensate and the variation in the chemistry of the intermediate waters suggests they were derived from a mixture of the ...

479

Yellow-emitting AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition  

Energy Technology Data Exchange (ETDEWEB)

Yellow-emitting pulsed laser operation of an Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P/Al/sub 0.16/Ga/sub 0.36/In/sub 0.48/P/ Al/sub 0.37/Ga/sub 0.15/In/sub 0.48/P double heterostructure laser diode was obtained at 77 K. The emission wavelength was 579 nm. The threshold current density was 5.6 kA/cm/sup 2/ for a diode with a Si/sub 3/N/sub 4/ insulated 8-..mu..m-wide and 250-..mu..m-long stripe geometry. The device was made from a DH wafer grown by conventional metalorganic chemical vapor deposition using triethyl metals and phosphine as source materials.

1984-11-01

480

Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy  

Energy Technology Data Exchange (ETDEWEB)

AlGaInP epitaxial layers grown at 690 {degree}C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the {l brace}111{r brace} directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, finally, ...

1990-04-09

481

Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy  

International Nuclear Information System (INIS)

AlGaInP epitaxial layers grown at 690 degree C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the #left brace#111#right brace# directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, ...

482

Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs  

Energy Technology Data Exchange (ETDEWEB)

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick-out mechanism or due to formation, migration, and dissociation of the pairs ''beryllium atom-group III self-interstitial'' is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self-interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to ''uphill'' diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of ''uphill'' diffusion could be related to the nonuniform distribution of group III self-interstitials that was formed due to the absorption of point defects on the extended defects and on ...

2006-10-15

483

Short-wavelength (approx. 625 nm) room-temperature continuous laser operation of In/sub 0. 5/(Al/sub x/Ga/sub 1-//sub x/)/sub 0. 5/P quantum well heterostructures  

Energy Technology Data Exchange (ETDEWEB)

Data are presented demonstrating very-short-wavelength (625 nm) room-temperature (300 K) continuous (cw) photopumped laser operation of In/sub 1-//sub y/(Al/sub x/Ga/sub 1-//sub x/)/sub y/P-In/sub 1-//sub y/ (Al/sub x/Ga/sub 1-//sub x/)/sub y/P quantum well heterostructures grown lattice matched (yapprox. =0.5) on a GaAs substrate via metalorganic chemical vapor deposition. In addition, 300 K pulsed laser operation (J/sub th/approx.10/sup 4/ A/cm/sup 2/, 625 nm) of diodes fabricated from the same crystal is described.

1988-04-18

484

Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces  

Science.gov (United States)

We report the growth and fabrication of midwave infrared InAs/GaSb strain layer superlattice (SLS) detectors. Growth of alternate interfaces leads to a reduced strain between the GaSb buffer and SLS ({delta}a{sub parallel}/a=-5x10{sup -4}), enabling the growth of active regions up to 3 {mu}m (625 periods). The structural, optical, and electrical properties of the active region were characterized using x-ray crystallography and photoluminescence, respectively. p-i-n detectors were grown using 625 periods of 8 ML (monolayer) InAs/8 ML GaSb as the active region. The {lambda}{sub cutoff} for the detectors was 4.6 {mu}m with a conversion efficiency of 32% at V{sub b}=-0.2 V. Detectivity was obtained using noise power spectral density measurements under 300 K 2{pi} field of view illumination and was equal to 5.2x10{sup 10} and 3x10{sup 10} cm Hz{sup 1/2}/W (V{sub b}=-0.02 V, T=80 K) in the white noise and 1/f noise limit (at 50 ...

2006-07-01

485

Memorandum : No. 048-M : 03/06/95:The following statement ...  

Science.gov (United States)

... We also toured a Trident submarine at Kings Bay, Ga. "During the weekend at the Joint Interagency Task Force Headquarters in Key West, Fla., we ...

486

Long-life bismuth liquid metal ion source for focussed ion beam micromachining application  

International Nuclear Information System (INIS)

Liquid metal ion sources (LMISs) with Ga as ion species are widely used in focused ion beam (FIB) technology for micromachining and surface treatment on the sub-micron and nano-scale. Key features of a LMIS for investigating mechanical properties and 3D-microfabrication of materials are long life-time, high brightness, stable ion current and a highly effective milling ability for the material to be modified. In order to increase the material removal rate, heavier ions than Ga and their clusters should be applied. Bismuth (Bi) is the heaviest, non-radio-active element in the periodic table, is non-toxic and exhibits a low melting point. We have thus produced a long-life (about 1000 h) Bi LMIS with a good beam performance, applicable in any FIB system. Since Bi is the only element in this source, it is not necessary to separate it from other ions by a mass filter. Investigation of the sputtering rate of NiTi shape memory alloys using ...

2008-09-15

487

InAIP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasers  

Science.gov (United States)

Distributed Bragg reflectors (DBRs) composed of In[sub 0.5]Al[sub 0.5]P/In[sub 0.5](Al[sub [ital y

1993-05-31

488

High-efficiency solar cell and method for fabrication  

Science.gov (United States)

A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction ...

1999-08-31

489

High power (1,4W) AlGaInP graded-index separate confinement heterostructure visible (. lambda. -658 nm)laser  

Science.gov (United States)

A high power AlGaInP single quantum well graded index separate confinement heterostructure. It comprises a substrate and a multiplicity of layers deposited thereon comprising a single Ga{sub x}In{sub x}P quantum well where x has a value from about 0.4 to about 0.6; multiple graded index regions on both sides of the quantum well and cladding layers adjacent to each graded region of the well, the graded region comprising Al{sub y}(Ga{sub 1{minus}y}){sub 0.5}In{sub 0.5}P quaternary alloy; wherein the value of y in the graded region varies from about 0.2 at the quantum well/graded region interface to up to about 0.6 for the cladding layers/graded index regions; the heterostructure having a low broad area threshold current with pulsed thresholds in the range from about 1 to about 2 Amps/cm{sup 2} and a differential efficiency of from about 20 to about 60 percent.

1991-03-26

490

High Efficiency Thin-Fili, GaAs Solar Cells - NASA Technical ...  

Science.gov (United States)

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

491

Geological evolution of the center-southern portion of the Guyana shield based on the geochemical, geochronological and isotopic studies of paleoproterozoic granitoids from southeastern Roraima, Brazil; Evolucao geologica da porcao centro-sul do escudo das Guianas com base no estudo geoquimico, geocronologico e isotopico dos granitoides paleoproterozoicos do sudeste de Roraima, Brasil  

Energy Technology Data Exchange (ETDEWEB)

This study focuses the granitoids of center-southern portion of Guyana Shield, southeastern Roraima, Brazil. The region is characterized by two tectonic-stratigraphic domains, named as Central Guyana (GCD) and Uatuma-Anaua (UAD) and located probably in the limits of geochronological provinces (e.g. Ventuari-Tapajos or Tapajos-Parima, Central Amazonian and Maroni-Itacaiunas or Transamazon). The aim this doctoral thesis is to provide new petrological and lithostratigraphic constraints on the granitoid rocks and contribute to a better understanding of the origin and geo dynamic evolution of Guyana Shield. The GCD is only locally studied near to the UAD boundary, and new geological data and two single zircon Pb-evaporation ages in mylonitic biotite granodiorite (1.89 Ga) and foliated hastingsite-biotite granite (1.72 Ga) are presented. These ages of the protholiths contrast with the lithostratigraphic picture in the other areas of Cd (1.96-1.93 ...

2006-07-01

492

GaInP high-power lasers; GaInP Hochleistungslaser  

Energy Technology Data Exchange (ETDEWEB)

The following work deals with the realization, characterization and modeling of GaInP / AlGaInP high power semiconductor laser diodes in the visible wavelength range. In addition to the exploration and optimization of efficiency, temperature stability and maximum output power of multi-mode lasers especially methods for longitudinal and lateral mode stabilization of high power laser diodes have been investigated. Although often the focus of optimization is on the threshold current density, in this work the performance of the laser diode for an operation point around 1 Watt under continous wave operation is regarded as the figure of merit. It turns out that low carrier densities are key for an efficient reduction of the heterobarrier leakage currents. In addition, large optical cavity structures with low internal losses enable high external quantum efficiencies even for long cavities. Finally high laser effiency as well as an efficient cooling ...

2002-07-01

493

Excitonic transitions in InGaP/InAlGaP strained quantum wells  

International Nuclear Information System (INIS)

Excitonic transitions in metalorganic vapor phase epitaxially grown In_xGa_1_-_xP/In_0_._4_8(Al_0_._7Ga_0_._3)_0_._5_2P strained single quantum-well structures are characterized using low-temperature photoluminescence and photoluminescence excitation (PLE) spectroscopies. The structures consist of several uncoupled quantum wells with thicknesses between 1.2 and 11.3 nm, and compositions x of 0.48 (nominally lattice matched) and 0.56 (#approx#0.6% biaxial compressive strain). The photoluminescence spectra exhibit intense peaks over the wavelength range 550--650 nm, with linewidths between 7 and 23 meV depending on the well thickness. The PLE spectra reveal strong heavy-hole and light-hole transitions, as well as higher-order (n=2) transitions in the thicker wells. The heavy-hole/light-hole splitting shows little dependence on well thickness in the strained structures, indicating a relatively large conduction band offset of ...

494

Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications  

Science.gov (United States)

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

2004-09-01

495

Electrical characteristics of AlxGa1-xN Schottky diodes prepared by a two-step surface treatment  

Science.gov (United States)

Near-ideal Schottky barrier contacts to n-type Al0.22Ga0.78N have been developed by a two-step surface treatment technique. Plasma etching of the AlxGa1-xN surface prior to Schottky metal deposition, combined with sequential chemical treatment of the etched surface, holds promise for developing high quality low-leakage Schottky contacts for low noise applications and for recessed gate high electron mobility transistors. In this work, the effect of postetch chemical treatment of the n-type Al0.22Ga0.78N surface on the performance of the Ni/Au based Schottky contact has been investigated. Three different types of chemical treatment: viz, reactive ion etching, reactive ion etching plus dipping in hot aqua regia, and reactive ion etching plus dipping in hot KOH, are studied. Detailed current-voltage studies of three different surface treated diodes and a comparison with as-deposited diodes reveal significant improvement in the ...

2004-09-01

496

Effective removal of Ga residue from focused ion beam using a plasma cleaner  

International Nuclear Information System (INIS)

Samples prepared using the focused ion beam (FIB) inevitably contain the surface damage induced by energetic Ga"+ ions. An effective method of removing the surface damage is demonstrated using a plasma cleaner, a device which is widely used to minimize the surface contamination in scanning transmission electron microscopy (STEM). Surface bombardment with low-energy Ar"+ ions was induced by biasing the sample immersed in the plasma source, so as to etch off the surface materials. The etch rates of SiO_2, measured with a bias voltage of 100-300 V, were found to vary linearly with both the time and bias and were able to be controlled from 1.4 to 9 nm/min. The removal of the Ga residue was confirmed using energy dispersive spectroscopy (EDS) after the plasma processing of the FIB-prepared sample. When the FIB-prepared sample was processed via plasma etching for 10 min with a bias of 150 V, the surface Ga damage was completely ...

497

Correlation between ion beam parameters and physical characteristics of nanostructures fabricated by focused ion beam  

International Nuclear Information System (INIS)

We report a study of the physical characteristics of the pillars of C, Pt and W grown by 10-30 keV Ga focused ion beam (FIB) as a function of Ga ion flux, and present a quantitative analysis of the elements using energy-dispersive analysis of X-rays (EDAX). All the FIB grown pillars exhibit a rough morphology with whisker like protrusions on the cylindrical surface and broadening of the base as compared to the nominal size. For a constant fluence, the height of the pillar initially increases and then reduces after going through a maximum as a function of ion flux in all the cases. The compositional analysis shows good metallic quality for Pt structures but reveals significant contamination of Ga in C and Ga and C in W structures at higher ion fluxes. Explanation to all these observations has been sought in the light of secondary ion and electron effects and the different processes involved which lead to ...

2008-04-01

498

Comparison of beam-induced deposition using ion microprobe  

International Nuclear Information System (INIS)

The localized Pt deposition on Si by 30 keV Ga"+ focused ion beam (FIB), 10 keV electron beam (EB) or dual beams (FIB and EB) using precursor gas has been compared by analysis using a 300 keV Be"2"+ microprobe with a beam spot size of 80 nm. The distribution of deposited Pt, Ga from the ion beam itself, and C from the precursor gas was obtained at and nearby the deposited areas by micro-RBS spectra and RBS mapping. All of the beam processed areas showed a uniform Pt distribution at the deposited areas. The amount of Pt atoms increased with the increase in ion or electron dose due to the decomposition of precursor gas. The thickness of Pt layer by EB is considerably less than that by FIB due to the reduced deposition rate. Ga atoms from the center of processed areas partly redeposited at and nearby the FIB processed areas within #approx#3 #mu#m. The Ga incorporation by dual beam processing was reduced ...

1999-01-02

499

Band parameters for III - V compound semiconductors and their alloys  

International Nuclear Information System (INIS)

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned ...

2001-06-01

500

ARDS (Automated Requirements Development System) ...  

Science.gov (United States)

... AFM DOD AFR T. O FED DCAC MIL ANSIX AFSC JANAP DIAM GA RADC FIPS SDSP STDN AFNAG MM NORAD JSC NORADM ME NORADR ...

1983-11-01