Energy Technology Data Exchange (ETDEWEB)

This dissertation deals with both the theoretical and the technological aspects of monolithic tunable lasers, and the experimental techniques for opto-electronic integration. In the theoretical part, the principles and limitations of wavelength tuning and spectral linewidth reduction in monolithic semiconductor lasers are described, with coupled distributed feedback-Fabry Perot (DFB-FP) lasers and long DFB lasers as examples. Stepwise tuning of wavelength over tens of nanometers and continuous tuning over the range of a mode spacing are shown to be possible. Spatial hole burning is found to affect the spectral linewidth of lasers involving strong active gratings. On the technological side, one of the major issues is the fabrication of flexible gratings. Direct-writing techniques, such as focused ion beam (FIB) implantation and e-beam lithography, provide the resolution, flexibility and accuracy that conventional holographic ...

International Nuclear Information System (INIS)

The bandwidth of LIGO-like terrestrial interferometric gravitational wave detectors is set by the pole of the Fabry-Perot cavities within the arms of the Michelson interferometer. This constraint arises because the gain of gravitational wave-induced signal sidebands is limited to frequencies within the linewidth of the cavities. The nature of standard Fabry-Perot cavities is such that one cannot independently adjust for increased gain without suffering a loss of bandwidth. If these quantities could be decoupled, the resulting improvement in bandwidth may lead to viable high frequency detectors. A pair of anti-parallel diffraction gratings within a Fabry-Perot cavity can increase the bandwidth of a LIGO-scale detector by a factor of #approx#1000.

Science.gov (United States)

Identification of the Ranging System Reference Point (SRP) ... Daylight Filter Type : (SPECTRAL FILTER/FABRY-PEROT/etc) Dayl. Filt. ... INT/etc) Edit Criterion 1st Chain : (ITERATIVE n.n SIGMA/MANUAL/NONE/etc) Edit Criterion 2nd Chain ...

Energy Technology Data Exchange (ETDEWEB)

This report describes the experimental researches on the polarization Characteristics of symmetric GaAs-GaAlAsP double heterojunction lasers, and analyses the mode-competition processes of these lasers. The experiments showed that semiconductor laser is emitted spontaneously and does not indicate optical polarization characteristic when it is biased under the threshold current. When it is biased above the threshold current, the laser for thin active layer of d = 0.15approx.0.40 ..mu..m is generally observed only in fundamental order mode, and TE mode polarization is predominant. At this time, polarization selection is dependent on Fabry-Perot cavity facet (cleaved face) mode reflectivity R/sub 0/. But TM mode is saturated at the threshold, the current applied to the laser above the threshold is used to enhance the TE polarization when the active thickness d is larger than 0.4 ..mu..m, the competition between TE and TM mode, fundamental order an ...

Science.gov (United States)

Optical measurement of the Doppler shift of laser backscatter, using a near-IR, visible, or ultraviolet laser, is potentially more robust and field reliable than coherent, heterodyne measurement with an IR laser. The direct measurement of the displacement of Fabry-Perot interference fringes is possible, but entails expensive, technically challenging, imaging detectors. The 'edge technique' permits Doppler shift measurements with relatively simple detectors and detector electronics, and has been implemented with Fabry-Perot etalons and with atomic line filters. Simple analytical models of the fringe imaging and edge detection techniques are presented, permitting ready calculation of the potential performance of either, for various atmospheric conditions and for various lidar hardware configurations. The predictions of the analytical models are confirmed by computer models, which in turn allow more detailed considerations of complicating factors ...

British Library Electronic Table of Contents (United Kingdom)

We fabricate a low noise erbium-doped fiber ring laser that can be continuously tuned over 102nm by insertion of the fiber Fabry-Perot tunable filter (FFP-TF) in the ring cavity with a novel cavity structure and the optimal gain medium length. As an application of this fiber ring laser, we performed the absorption spectroscopy of acetylene (13C2H2) and hydrogen cyanide (H13C14N) and measure the absorption spectra of more than 50 transition lines of these gases with an excellent signal to noise ratio (SNR). The pressure broadening coefficients of four acetylene transition lines are obtained using this fiber ring laser and an external cavity laser diode.

British Library Electronic Table of Contents (United Kingdom)

In this paper, we report an optical fiber sensor for measuring temperature based on bimetallic concept. The sensor is designed by following the basic principle of Fabry-Perot interferometer and theoretical detail of the sensor has been outlined here with a numerical study. An important feature of the proposed sensor is that the fabrication will be done on a commercial multimode optical fiber. The Micro-Electro-Mechanical Systems (MEMS) based fabrication process could be performed directly on a multimode optical fiber end face which will eliminate the need for adhesive in packaging. The sensor could be fabricated as sensor arrays for micro level applications. The potential application of the proposed optical sensor includes biomedical applications, nano research, microfluidics, and other ME...

Science.gov (United States)

We report the characteristics of visible vertical cavity surface emitting laser diodes. Wafers are grown such that the Fabry--Perot resonance wavelength changes with position from 690 to 620 nm, overlapping to varying degrees with the [ital n]=1 and [ital n]=2 quantum well gain peaks at [similar to]670 and 650 nm. Gain guided devices are tested across the entire wafer, and pulsed room temperature lasing is observed from 634.6 to 663.2 nm. Our results suggest that gain contributions from the second quantized state are required to overcome high cavity losses in order to achieve lasing.

CERN Document Server

A prism spectrometer has been developed to operate in the VUV wavelength range from 120 to 200 nm. It can be used as a pre- disperser in conjunction with a Fabry-Perot based gas refractometer. This instrument has also been used to measure the refractive index of the liquid radiator C/sub 6/F/sub 14/ in various spectral lines. This radiator is used in the RICH detectors of the DELPHI experiment and has been proposed for ALICE, and LHCb experiments. The spectral resolution of the system is improved as the wavelength decreases and the data are consistent with a wavelength accuracy about 0.4 nm at 140 nm. The results for the dispersion curve of the above liquid are presented. (17 refs).

CERN Document Server

The near infrared (NIR) upgrade to the Robert Stobie Spectrograph (RSS) on the Southern African Large Telescope (SALT), RSS/NIR, extends the spectral coverage of all modes of the visible arm. The RSS/NIR is a low to medium resolution spectrograph with broadband imaging, spectropolarimetric, and Fabry-Perot imaging capabilities. The visible and NIR arms can be used simultaneously to extend spectral coverage from approximately 3200 A to 1.6 um. Both arms utilize high efficiency volume phase holographic gratings via articulating gratings and cameras. The NIR camera is designed around a 2048x2048 HAWAII-2RG detector housed in a cryogenic dewar. The Epps optical design of the camera consists of 6 spherical elements, providing sub-pixel rms image sizes of 7.5 +/- 1.0 um over all wavelengths and field angles. The exact long wavelength cutoff is yet to be determined in a detailed thermal analysis and will depend on the semi-warm instrument cooling scheme. Initial estimates ...

International Nuclear Information System (INIS)

The plasma cladding waveguide, which is a cylindrical dielectric core surrounded by a plasma cladding, is developed, and the guided modes and their characteristics of this waveguide are displayed through the present detailed theoretical research. The conditions of the single mode existing in the plasma cladding waveguide have been given, and the defined forbidden gap of frequency is discussed. It is found that the usage characteristics of the plasma cladding waveguide vary strongly with plasma frequency, and changing the plasma parameters can control the propagation mode. This paper focuses on exhibiting the basic characteristics and the potential applications of this new type of waveguide.

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

... Union (INTAS), Brussels (Belgium) Science and Technology Center in Unkraine,

International Nuclear Information System (INIS)

The effect of resonance, observed in X-ray waveguide layered structures in a characteristic way influences the scattering properties of the films. It is well known that the resonant region in the reflectivity shows a series of minima, usually very deep and extremely narrow. The positions and depths of the minima depend only on X-ray waveguide and quasi X-ray waveguide film structural properties, on the X-ray wavelength and on the incident beam divergence. In the present work we propose and discuss the application of the X-ray waveguide and quasi X-ray waveguide film structures as a tools to experimental evaluation of some quantities related to X-ray reflectometric and diffractometric measurements, like the beam divergence, wavelength, or angular distance. Examples of application of X-ray waveguide as an excellent tool for estimate the effective beam divergence ...

CERN Document Server

Predictions and measurements of a multimode waveguide interferometer operating in a fibre coupled, ``dual-mode'' regime are reported. With a 1.32 micrometer source, a complete switching cycle of the output beam is produced by a 10.0 nanometer incremental change in the 8.0 micrometer width of the hollow planar mirror waveguide. This equates to a fringe spacing of $\\sim\\lambda /130$. This is an order of magnitude smaller than previously reported results for this form of interferometer.

Energy Technology Data Exchange (ETDEWEB)

For InAs-GaAs based quantum dot lasers emitting at 1300 nm, digital modulation showing an open eye pattern up to 12 Gb s{sup -1} at room temperature is demonstrated, at 10 Gb s{sup -1} the bit error rate is below 10{sup -12} at -2 dB m receiver power. Cut-off frequencies up to 20 GHz are realised for lasers emitting at 1.1 {mu}m. Passively mode-locked QD lasers generate optical pulses with repetition frequencies between 5 and 50 GHz, with a minimum Fourier limited pulse length of 3 ps. The uncorrelated jitter is below 1 ps. We use here deeply etched narrow ridge waveguide structures which show excellent performance similar to shallow mesa structures, but a circular far field at a ridge width of 1 {mu}m, improving coupling efficiency into fibres. No beam filamentation of the fundamental mode, low a-factors and strongly reduced sensitivity to optical feedback are observed. QD lasers are thus superior to QW lasers for any system or network. Quantum dot ...

International Nuclear Information System (INIS)

We report coupling and guiding of pulses of peak power up to 0.3 TW in 1.5 cm long preformed plasma waveguides generated in a high repetition rate argon gas jet. Coupling of up to 52% was measured for 50 mJ, -110 fs pulses injected at times longer than 20 ns, giving guided intensities up to -5x1016 W/cm2. It was found that for short delays between waveguide generation and pulse injection, pulse shortening occurred, with this effect reduced as delay was increased. Injection into the waveguide of two consecutive pulses separated by a few nanoseconds resulted in the reduction of shortening of the second pulse at all delays. Femtosecond time-resolved shadowgrams of the coupling of injected pulses into the waveguide show that there is ?0.5 mm of neutral gas remaining at the waveguide entrance after waveguide generation.

International Nuclear Information System (INIS)

The transverse modes of a submillimetre laser cavity that contains waveguides and open parts were studied theoretically and experimentally with the purpose of finding methods for mode selection. Two methods based on the filtering of the Fourier spectra of the waveguide modes and the use of their interference were substantiated numerically and realised in experiment. Special attention was paid to the mode selection in tunable lasers. Scaling laws allowing one to use the obtained results in a wide range of the cavity parameters and wavelengths are presented. (laser applications and other topics in quantum electronics)

Science.gov (United States)

... thus can function as switches -6 ... Akkari, "Optical Channel Waveguide Switch and Coupler ... Wide-Band Guided Wave Acousto-Optic Bragg Diffraction ...

Science.gov (United States)

... Tunable semiconductor lasers are essential components for links employing optical frequency modulation (OFM) for enhanced dynamic range or ...

Science.gov (United States)

Channel plasmon polaritons (CPPs) propagating along the bottom of subwavelength grooves cut into a metal surface were recently shown to exhibit strong confinement combined with low propagation loss, a feature that makes this guiding configuration very promising for the realisation of ultra-compact photonic components. Here, the results of our investigations of CPP guiding by V-grooves cut into gold are presented, demonstrating efficient large-angle bending and splitting of radiation as well as waveguide-ring resonators and Bragg grating filters.

Science.gov (United States)

An integrated mirrorless bistable optical device based on the Mach-Zehnder interferometric optical switch has been proposed and demonstrated experimentally using a Ti:LiNbO3 waveguide. The resulting device is capable of combining more than two of them to realize multifunctional optical devices such as optical multivibrators.

International Nuclear Information System (INIS)

A quantum mechanical analysis of the guided light in integrated photonics waveguides is presented. The analysis is made starting from one-dimensional (1D) guided vector modes by taking into account the modal orthonormalization property on a cross section of an optical waveguide, the vector structure of the guided optical modes and the reversal-time symmetry in order to quantize the 1D vector modes and to derive the quantum momentum operator and the Heisenberg equations. The results provide a quantum-consistent formulation of the linear and nonlinear quantum light propagations as a function of forward and backward creation and annihilation operators in integrated photonics. As an illustration, an application to an integrated nonlinear directional coupler is given, that is, both the nonlinear momentum and the Heisenberg equations of the nonlinear coupler are derived.

CERN Document Server

A set of mode-coupled excitation equations for the slowly-growing amplitudes of dielectric waveguide eigenmodes is derived as a description of the electromagnetic signal field of a high-gain free-electron laser, or FEL, including the effects of longitudinal space-charge. This approach to describing the field basis set has notable advantages for FEL analysis in providing an efficient characterization of such eigenmodes, and in allowing a clear connection to free-space propagation of the input (seeding) and output radiation. A simple transformation converts the coupled differential excitation equations into a set of coupled algebraic equations and yields a matrix determinant equation for the FEL eigenmodes. A quadratic index medium is used as a model dielectric waveguide to obtain an expression for the predicted spot size of the dominant eigenmode, in the approximation that it consists of a single gaussian mode.

Science.gov (United States)

light-emitting diode A light-emitting diode, or LED, is a semi-conductor light source that emits visible light or invisible infrared radiation. Semi-conductors ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

The possibility to compress and to split laser pulses at their nonlinear optical transmission through semiconductor films was investigated

Energy Technology Data Exchange (ETDEWEB)

The preliminary design of a far-infrared free-electron laser with a Coaxial Hybrid Iron (CHI) wiggler is presented. The CHI wiggler consists of a central rod and outer ring of alternating ferrite and dielectric spacers. A periodic wiggler field is produced when the CHI structure is immersed in an axial magnetic field. The design under investigation makes use of 1A, 1MV annular electron beam interacting with the TE{sub 01} coaxial waveguide mode at approximately 1 THz ({lambda} = 300 {mu}m). The nominal wiggler period is 0.5 cm and the inner and outer waveguide radii are 0.4 and 0.8 cm, respectively. An axial guide field of 5-10 kG is used. The device performance is modeled with slow-time-scale nonlinear code. Self fields and axial velocity spread are included in the model. Theoretical results will be presented.

International Nuclear Information System (INIS)

2009 p. 143-144 Ukraine Lepikh, Ya.I. Odesa National University, Odesa

Science.gov (United States)

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

Energy Technology Data Exchange (ETDEWEB)

Motivation is given for a technique to more thoroughly test semiconductor equipment control systems. A description is given of a simulator-based control system testing technique. Potential benefits that could be realized by using this technique in the semiconductor industry as well as benefits documented by using this technique in other industries are described. Specific requirements for using the technique in the semiconductor industry are outlined. A summary of a survey of nine commercial simulation systems is given. Finally, the outcome of the survey is compared with the requirements for using the technique.

Energy Technology Data Exchange (ETDEWEB)

Dose dependences of conductivity at a temperature of 78 K for InSb and InAs single crystals under reactor fast neutron, 50 MeV proton and 80 MeV alpha particle irradiation up to fluence of 10{sup 17} cm{sup -2} are considered. Special attention is given to non-trivial, but little known semi-conductor characteristics in terms of {sigma}(F) dependence at large fluences, and also to the versatility of such dependence for all semiconductors. The behaviour of semiconductor materials conductivity dependence on fluence presented here may be used for semiconductor dosemeters characterisitic variation forecasting under large fluence measurements and in radiation emergency dosimetry. (author).

International Nuclear Information System (INIS)

Power extraction using a dielectric-loaded (DL) waveguide is a way to generate high-power radio frequency (RF) waves for future particle accelerators, especially for two-beam-acceleration. In a two-beam-acceleration scheme, a low-energy, high-current particle beam is passed through a deceleration section of waveguide (decelerator), where the power from the beam is partially transferred to trailing electromagnetic waves (wakefields); then with a properly designed RF output coupler, the power generated in the decelerator is extracted to an output waveguide, where finally the power can be transmitted and used to accelerate another usually high-energy low-current beam. The decelerator, together with the RF output coupler, is called a power extractor. At Argonne Wakefield Accelerator (AWA), we designed a 7.8GHz power extractor with a circular DL waveguide and tested it with single electron bunches and bunch ...

International Nuclear Information System (INIS)

The principle of conservation and transferability of chemical bonds explains the recent discovery by extended x-ray absorption fine-structure measurements of two unequal anion-cation bond lengths R/sub A/C and R/sub B/C in A/sub x/B/sub 1-x/C zinc-blende semiconductor alloys despite the close adherence of the lattice constant to the average value (Vegard rule). This bond alternation, manifested as a structural distortion to a local chalcopyrite coordination around the anions, explains also most of the observed optical bowing in semiconductor alloys.

Science.gov (United States)

This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 ..mu..m and Al/sub 0.1/Ga/sub 0.9/P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.

International Nuclear Information System (INIS)

Nonparabolicity of the heavy hole band in diamond-like semiconductors, which occurs within the framework of the three band model with the perturbation from the other bands taken into account according to the Loewdin procedure, is studied. A direct dependence of nonparabolicity on the band anisotropy (caused by the different effect of Gamma/sub 15c/ and Gamma/sub 12c/ bands) and the inverse dependence on the magnitude of the spin-orbit splittiing is established. A connection between the effective mass of heavy holes and their energy is obtained, which is valid for the majority of diamond-like semiconductors, except for materials with a very strong nonparabolicity of the band of silicon type.

Science.gov (United States)

For coupled quantum wires and dots, tunneling effects and coherent transport for quantum computing are being studied. In 2D systems, electron-hole bilayers for exciton...

Science.gov (United States)

COATINGS FOR THE METAL-SEMICONDUCTOR SOLAR CELLS 3S GIVEN. THIS METHOD UTILIZES THE MEASURED EQUIVALENT INDEX OF. REFRACTION OBTAINED FROM ELLIPSOMETRY ...

Science.gov (United States)

Metal-semiconductor solar cells reported to date exhibit inherently low output voltages. This effect isa consequence of high diode "saturation" ...

Science.gov (United States)

The millimeter microwave source of gyrotron-traveling-wave amplifier (gyro-TWT) is capable of generating high power coherent radiation in a broad bandwidth, while its performance is severely deteriorated by the stability problems. This paper focuses on modeling and the stability analysis of the Naval Research Laboratory (NRL) Ka-band TE{sub 01} mode gyro-TWT based on an interaction circuit alternately loaded with lossy ceramic shells and metal rings. The propagation characteristics of the interaction circuit is analyzed first, based on which the boundary impedance method is employed to build an equivalent uniform lossy circuit. Then the stability of the interaction system is studied using linear and nonlinear theories. The analysis reveals that, due to the special waveguide structure and the dielectric loss, the propagation characteristics of the complex waveguide are similar to that of a uniform lossy circuit. The analysis of the absolute ...

Energy Technology Data Exchange (ETDEWEB)

A Bragg waveguide consisting of multiple dielectric layers with alternating index of refraction becomes an excellent option to form electron accelerating structure powered by high power laser sources. It provides confinement of a synchronous speed-of-light mode with extremely low loss. However, laser field can not be coupled into the structure collinearly with the electron beam. There are three requirements in designing input coupler for a Bragg electron accelerator: side-coupling, selective mode excitation, and high coupling efficiency. We present a side coupling scheme using a distributed grating-assisted coupler to inject the laser power into the waveguide. Side coupling is achieved by a grating with a period on the order of an optical wavelength. The phase matching condition results in resonance coupling thus providing selective mode excitation capability. The coupling efficiency is limited by profile matching between the outgoing beam and ...

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The LANL 2.5-cell, normal-conducting radio-frequency (NCRF) injector has been fabricated. We present initial results of low-power RF measurements (cavity Q, cavity field map, coupling beta, etc.) of the NCRF injector. The measured cavity Q and relative fields are found to be in good agreement with the design calculations and earlier measurements of Glidcop properties. However, the coupling beta of the ridge-loaded waveguides is found to be significantly higher than the design point. The impact of these low-power measurement results on the planned high-power RF and electron beam tests will be discussed.

CERN Document Server

Based on the exact results obtained by Bethe ansatz, we demonstrate the existence of stable bound pair (BP) wave packet in Bose Hubbard model with arbitrary on-site interaction U. In large-U regime, it is found that an incoming single-particle (SP) can coherently pass through a BP wave packet and leave a coherent shift in the position of it. This suggests a simple scheme for constructing a BP charge qubit to realize a quantum switch, which is capable of controlling the coherent transport of one and only one photon in a one-dimensional waveguide.

International Nuclear Information System (INIS)

To achieve high efficiency for the conversion of electron kinetic energy in an electron beam to electromagnetic energy in a Free Electron Laser (FEL), it is important to improve the beam quality. And hence, it is necessary to study and minimize the emittance growth of the beam. According to the requirements for the beam quality in an FEL, the author analyzed the emittance growth caused by the jump of the electric field in an accelerator, energy increase, wakefield in a waveguide, space charge effect and distribution of particles in a beam as well as the wakefield in a deflect system etc. The author also estimated the emittance change caused by the variation of the microwave field from the gun to the first accelerator for such case.

International Nuclear Information System (INIS)

Refractive indices of some mixed compound semiconductors below the bandgap are presented on the basis of some fundamental parameters and the effect of lattice mismatch on the refractive index step is also studied. The results help to design a variety of opto-electronic devices for the use in optical fiber communication and heterostructure lasers. The calculated values agree well with available experimental values thus justifying the approach. (author).

Energy Technology Data Exchange (ETDEWEB)

Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

Energy Technology Data Exchange (ETDEWEB)

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H{sub 2}SO{sub 4} solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is ...

International Nuclear Information System (INIS)

This section of the report is concerned with the study of the metallisation, oxidation and doping of materials which are of importance to the micro-electronics industry. The Van de Graaff accelerator and radioactive tracers are used for studying surface and sub-surface behaviour of these materials.

Energy Technology Data Exchange (ETDEWEB)

To study CdZnTe as a high energy resolution gamma ray detector with a novel new design, and to build a detector array from the new detector design

Science.gov (United States)

Advanced aerospace vehicles and system components tend to be slim and elastic, ...... In the manufacturing sector, semiconductor manufacturing requires ... The energy generation and storage for modern-day sensor networks, ...... Current NASA roadmaps point towards development of new hydrocarbon fueled engines. ...

Science.gov (United States)

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

Energy Technology Data Exchange (ETDEWEB)

This course is based upon lectures in physics given by Professor Feynman at the California institute of technology during 1961 and 1962. This volume is dedicated to quantum physics, semiconductors, symmetry and advanced principles of physics.

Energy Technology Data Exchange (ETDEWEB)

A free-electron laser (FEL) two-beam accelerator (TBA) is proposed, in which the FEL interaction takes place in a series of drive cavities, rather than in a waveguide. Each drive cavity is 'beat-coupled' to a section of the accelerating structure. This standing-wave TBA is investigated theoretically and numerically, with analyses included of microwave extraction, growth of the FEL signal through saturation, equilibrium longitudinal beam dynamics following saturation, and sensitivity of the microwave amplitude and phase to errors in current and energy. It is found that phase errors due to current jitter are substantially reduced from previous versions of the TBA. Analytic scalings and numerical simulations are used to obtain an illustrative TBA parameter set.

Energy Technology Data Exchange (ETDEWEB)

Low level radioactive wastes (concrete pieces) or materials to be melted such as burnt ashes of wastes are charged into a melting furnace. Then, gyrotron of a microwave generator is oscillated, and generated microwaves of a large power are introduced to a melting furnace by a waveguide. The microwaves are irradiated from an irradiator to a beam converging-type reflecting mirror antenna disposed opposite to the irradiator. Then, an antenna driving portion is operated to rotate and move the antenna in parallel. With such procedures, the microwaves of a large power are converged acutely in a beam-like manner to a predetermined range in the melting furnace, and the converged beams of the microwaves are scanned. This can generate heat from the inner side of the materials to be melted charged to the melting furnace by the induction loss and they are melted. (I.N.)

CERN Document Server

We report on a two-photon interference experiment in a quantum relay configuration using two picosecond regime PPLN waveguide based sources emitting paired photons at 1550 nm. The results show that the picosecond regime associated with a guided-wave scheme should have important repercussions for quantum relay implementations in real conditions, essential for improving both the working distance and the efficiency of quantum cryptography and networking systems. In contrast to already reported regimes, namely femtosecond and CW, it allows achieving a 99% net visibility two-photon interference while maintaining a high effective photon pair rate using only standard telecom components and detectors.

Energy Technology Data Exchange (ETDEWEB)

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

International Nuclear Information System (INIS)

In this work, the effects of the focus ion beam (FIB) milling process on the optical properties of semiconductor nanostructures were investigated. With this aim, a sensitive materials system based on InGaAs/GaAs quantum dots with well known and excellent optical properties was selected for the FIB treatment. The FIB technique was used to locally remove a metallic mask deposited on top of the quantum dot sample. The photoluminescence (PL) signal, collected from the circular openings, was used to infer the possible damage effects of the ion beam on the properties of the dots.

International Nuclear Information System (INIS)

The excess energy of several III-V and II-VI strained-layer semiconductor superlattices (AC)_p(BC)_p is studied as a function of the repeat period p and orientation G=[001], [110], [111], and [201], using first-principles calculations. We discover a number of universal features, including the predicted instability for nearly all p's and G's with respect to bulk disproportionation, the identification of chalcopyrite as a metastable ordered structure, and the stability of all thin epitaxial [110] and [201] and most common-anion [001] superlattices relative to coherent phase separation.

British Library Electronic Table of Contents (United Kingdom)

A problem of the catalytic activity definition for metals, binary metallic alloys, and semiconductor materials is considered within new quantum mechanical and electrodynamics approach in the electron theory of catalysis. The quantitative link between the electron structure parameters of the materials and their catalytic activity on example of simple model reactions of the following type are found: H = H+ + e, O2 + e- = O2-. Copyright 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2009

Energy Technology Data Exchange (ETDEWEB)

Nonlinear two-dimensional theory of the space charge of an axially symmetric electron beam propagating in combined right-hand polarized wiggler and uniform axial guide fields in a presence of high-frequency electromagnetic wave is presented. The well-known TE{sub 01} mode in a cylindrical waveguide for the model of radiation fields and paraxial approximation for the wiggler field are used. Space charge field components are written in the Lagrange coordinates by the twice averaged Green`s functions of two equally charged infinitely thin discs. For that {open_quotes}compensating charges{close_quotes} method is applied in which an electron ring model is substituted by one with two different radii and signs discs. On this approach the initial Green`s functions peculiarities are eliminated and all calculations are considerably simplified. Coefficients of a twice averaged Green`s function expansion into a Fourier series are obtained by use of corresponding expansion ...

Science.gov (United States)

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al{sub 0.5}Ga{sub 0.5}As and In{sub 0.53}Ga{sub 0.47}As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, {ital E}({Gamma}{sub 1{ital c}}) of AlP, {ital E}({ital L}{sub 1{ital c}}) of AlAs, and {ital E}({ital L}{sub 1{ital c}}) of AlSb are discussed and attributed to various experimental uncertainties. Several other ...

Energy Technology Data Exchange (ETDEWEB)

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

International Nuclear Information System (INIS)

The search for alternative energy supplies continues since the oil crisis of 1973. One energy vector is dihydrogen, H_2. Of the group VI hydrides, water has been the focus of most studies in harnessing solar energy and generating H_2. Two basic photochemical strategies have been employed: molecular photocatalytic systems, and semiconductor based photocatalytic systems. The results have not met with the euphoric expectations of the mid-1970's because of the difficulties encountered in H_2O splitting (E"0 S"2 "-/S = + 0.51 eV, NHE) is another vehicle tapped as a potential source of H_2. Heterogeneous photocatalysis utilizing semiconductor particulates and sunlight as the photon source has been successful with interesting quantum efficiencies. To this end, novel photocatalytic devices have been developed; one of these uses two coupled semiconductors to achieve vectorial displacement of the photogenerated reducing and oxidizing ...

Energy Technology Data Exchange (ETDEWEB)

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and ...

Energy Technology Data Exchange (ETDEWEB)

In this work it is made a study of the structure and electric properties of chlorate polyethylene (PE-CI) with double and simple bonds obtained by continuous plasma with resistive coupling to 13.5 MHz. The synthesis conditions are power between 10 and 14 W and pressure of (6-7) x 10{sup -2} Torr. The synthesized PE-Cl in that way is soluble in acetone what indicates that probably is formed of short chains and not it shows the generalized inter crossing that is presented in some syntheses by plasma and that it can degrade the electric properties of these polymers. The IR and XPS analysis show the vibration of the C-C, C=C and C-CI bonds. The morphology of the polymer after being dissolved shows a compact and flat configuration. The electric conductivity has an approximately lineal behavior in an interval of 35 to 90% of relative humidity. (Author)

International Nuclear Information System (INIS)

An overview on neutron scattering studies of ferromagnetic and antiferromagnetic all-semiconductor superlattices is presented. Diffraction experiments on MnTe/CdTe, MnTe/ZnTe and EuTe/PbTe superlattices show pronounced correlations between the MnTe and EuTe layers across the non-magnetic spaces, even though these layers are antiferromagnetic and the systems are nearly-insulating. Current theory status of these systems is discussed. Diffractometry and reflectometry data from EuS/PbS superlattices reveal pronounced antiferromagnetic coupling between the ferromagnetic EuS block. First polarized neutron reflectometry data from superlattices prepared of a novel ferromagnetic 'spintronics' material, Ga(Mn)As are also presented. (author)

International Nuclear Information System (INIS)

Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

International Nuclear Information System (INIS)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

Energy Technology Data Exchange (ETDEWEB)

The mass and charge distributions in an unseparated mix of fission product nuclei from thermal-neutron fission of /sup 242m/Am were studied through semiconductor gamma-ray spectrometry. Samples of the fissionable material under study were irradiated in a vertical irradiation tube of the MIFI IRT research reactor. Following irradiation, measurements were made on aperture-calibrated semiconductor detectors. For broader identification of fission fragment nuclides three experiments were conducted that differed substantially in irradiation duration. The spectrum of gamma radiation from the mix of fission products and the time dependences of count rate at total absorption peaks were analyzed on SM-4 and Iskra-226 computers. The values of yields obtained were compared with data of investigations conducted earlier with other experimental methods, and also with the results of calculations.

Energy Technology Data Exchange (ETDEWEB)

Charge transport in disordered organic semiconductors is generally described as thermally activated hopping in a gaussian distribution of localized states. The presence of charge traps is critical to the performance of organic electronic devices, since trapped charge carriers do no longer contribute to the current flow. The trap distribution in the polymer poly(3-hexylthiophene) (P3HT) is investigated by applying the fractional thermally stimulated current technique. Thereby, a low temperatur double-peak distribution has been revealed. One of the peaks is believed to belong to the tail of the intrinsic density of states, whereas the other trap is strongly affected by exposure to oxygen. We discuss the influence of oxygen exposure time on the trap distribution.

Energy Technology Data Exchange (ETDEWEB)

Pd/n-Si and Pd/n-GaAs devices have been irradiated from high energy ({approx}100 MeV) heavy ions of Au{sup 7+} (gold) and Si{sup 7+} (silicon) to study the irradiation effects in these junction devices on semiconductor substrates. The devices have been characterized from I-V and C-V studies for electronic flow characterization. It has been found that the devices become high resistive on the irradiation and the substrates change the conductivity type from n- to p- on the irradiation of fluence of {approx}10{sup 12}-10{sup 13} ions/cm{sup 2}. The change in conductivity type has been understood as a result of creation of deep acceptors on the irradiation.

International Nuclear Information System (INIS)

Focused ion beam (FIB) micromachining has been used to produce inclined planes on semiconductor surfaces. A 10 keV FIB system, utilising a Ga"+ liquid metal ion source (LMIS), was employed. The ramped surfaces were prepared by digitally deflecting the ion beam in a serpentine fashion over a rectangular area and incrementing the time the beam spends at a pixel, dwell time, line by line. For the conditions used, control in micromachining the inclination of the ramps to the starting horizontal surface is of the order of 1 arc s per scan of the FIB over the area of interest. The possibility of using such surfaces prepared by FIB, along with vacuum growth techniques such as molecular beam epitaxy (MBE), for application to strain relief structures and lateral device production is discussed. (author).

Energy Technology Data Exchange (ETDEWEB)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir{sub 3}Si{sub 5} is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru{sub 2}Si{sub 3}, Os{sub 2}Si{sub 3}, and OsSi{sub 2}.

Energy Technology Data Exchange (ETDEWEB)

Using carbon-paste-CuFeS{sub 2} electrodes and a cyclic voltammetric technique, it was found that a large number of intermediate electrochemical oxidation reactions were associated with the dissolution of chalcopyrite in presence and absence of bacteria. The effects of concentrations of copper, ferrous and ferric ions, as well as of agitation on the peaks of cyclic voltammograms were measured. It was established that chalcopyrite oxidation was solid-state controlled as suggested by the data of chronopotentiometric and chronoamperometric measurements. The activation energy of solid state diffusion of chalcopyrite leaching was determined by the Sand's method to be {triangle}E{sub a} = 20.5 kJ. The leaching mechanism is discussed in terms of solid-state properties (energy bonding) of the n-type semiconductor chalcopyrite and energy density states of redox systems of acidic bacterial leach media. A generalized model for the mechanism of chalcopyrite leaching ...

International Nuclear Information System (INIS)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature.

International Nuclear Information System (INIS)

The energy deposited by the passage of a single, energetic, heavy-ion through a semiconductor produces dense electron-hole (eh) pair concentrations near the ion trajectory. The size, shape, and charge density of an ion track represent critical parameters for many models of single event phenomena. The authors describe the design and uses of possible semiconductor test structures for measuring the initial radial distribution of charge and subsequent charge transport in a high energy, heavy-ion track. Numerical simulations show how the test structure can resolve different radial distributions of charge within an ion track. The test structure simulations also show the importance of accurately representing ion track structure in single event effects simulations.

Energy Technology Data Exchange (ETDEWEB)

One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

Energy Technology Data Exchange (ETDEWEB)

The Two-Beam Accelerator (TBA) consists of a long high-gradient accelerator structure (HGS) adjacent to an equal-length Free Electron Laser (FEL). In the FEL, a beam propagates through a long series of undulators. At regular intervals, waveguides couple microwave power out of the FEL into the HGS. To replenish energy given up by the FEL beam to the microwave field induction accelerator units are placed periodically along the length or the FEL. In this manner it is expected to achieve gradients of more than 250 MV/m and thus have serious option for a 1 TeV /times/ 1 TeV linear collider. The state of present theoretical understanding of the TBA is presented with particular emphasis upon operation of the ''steady-state'' FEL, phase and amplitude control of the rf wave, and suppression of sideband instabilities. Experimental work has focused upon the development of a suitable HGS and the testing of this structure using the Electron ...

CERN Document Server

We point out that electromagnetic one-way edge modes analogous to quantum Hall edge states, originally predicted by Raghu and Haldane in 2D gyroelectric photonic crystals possessing Dirac point-derived bandgaps, can appear in more general settings. In particular, we show that the TM modes in a gyromagnetic photonic crystal can be formally mapped to electronic wavefunctions in a periodic electromagnetic field, so that the only requirement for the existence of one-way edge modes is that the Chern number for all bands below a gap is non-zero. In a square-lattice gyromagnetic Yttrium-Iron-Garnet photonic crystal operating at microwave frequencies, which lacks Dirac points, time-reversal breaking is strong enough that the effect should be easily observable. For realistic material parameters, the edge modes occupy a 10% band gap. Numerical simulations of a one-way waveguide incorporating this crystal show 100% transmission across strong defects, such as perfect ...

Energy Technology Data Exchange (ETDEWEB)

Nuclear physics accelerators are powered by microwaves which must travel in waveguides between room-temperature sources and the cryogenic accelerator structures. The ohmic heat load from the microwaves is affected by the temperature-dependent surface resistance and in turn affects the cryogenic thermal conduction problem. Integrated EM & thermal analysis of this difficult non-linear problem is now possible with the VORPAL finite-difference time-domain simulation tool. We highlight thermal benchmarking work with a complex HOM feed-through geometry, done in collaboration with researchers at the Thomas Jefferson National Accelerator Laboratory, and discuss upcoming design studies with this emerging tool. This work is part of an effort to generalize the VORPAL framework to include generalized PDE capabilities, for wider multi-physics capabilities in the accelerator, vacuum electronics, plasma processing and fusion R&D fields, and we will also discuss user ...

Energy Technology Data Exchange (ETDEWEB)

In previous research, we found that sodium-dependent high-affinity choline uptake in the hippocampus and frontal cortex of the rat was lowered after acute (45 min) exposure to low-level 2450-MHz pulsed microwaves (power density 1 mW/cm2; average whole body specific absorption rate, 0.6 W/kg; 2 mu sec pulses, 500 pps). In the present experiment, we investigated developments of tolerance and classical conditioning to these effects of microwaves. Rats were exposed to microwaves in cylindrical waveguides in 10 daily sessions (45 min per session). In an 11th session, we subjected the rats to either microwave (study of tolerance) or sham exposure (study of conditioned effect) for 45 min, and immediately measured choline uptake in the hippocampus and frontal cortex. We found that tolerance, a decrease in response to microwaves, developed to the effect of microwaves on choline uptake in the hippocampus, but not in the frontal cortex. Conditioned effects were also observed: ...

Energy Technology Data Exchange (ETDEWEB)

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

International Nuclear Information System (INIS)

Recent progress with the (Al_xGa_1_-_x)_0_._5In_0_._5P alloy system has resulted in laser diodes which operate at room temperature at wavelengths below 640 nm. OMVPE is used to grow the multi-quantum-well devices in a graded-index separate-confinement configuration. Laser threshold currents as low as 75 mA have been achieved.

International Nuclear Information System (INIS)

An investigation of the Ll x-#gamma# angular correlations following the decay of "2"0"7Bi is done by using a Si(Li) semiconductor counter as L x-ray detector. Coincidence measurements at five different angles were made between the 570-keV #gamma# ray (gated in the movable counter) and the Ll x spectrum (displayed in a multichannel analyzer).

CERN Document Server

A self-organizing particle swarm is presented. It works in dissipative state by employing the small inertia weight, according to experimental analysis on a simplified model, which with fast convergence. Then by recognizing and replacing inactive particles according to the process deviation information of device parameters, the fluctuation is introduced so as to driving the irreversible evolution process with better fitness. The testing on benchmark functions and an application example for device optimization with designed fitness function indicates it improves the performance effectively.

International Nuclear Information System (INIS)

This study mainly concerns medical explorations by radioisotopes. Detectors with medical exams and applications are described. Ionisation chambers, semiconductor detectors and scintillation counters are also presented. Uses of radioisotopes in medicine in vivo and in vitro techniques are explained. Examples of scintiscanning are given like: angiography, nuclear cardiography and thyroid scintiscanning. The importance of the study is to present a panorama of nuclear medicine laboratories -at the time- in hospitals in Lebanon.

International Nuclear Information System (INIS)

X-ray scattering methods suitable for the investigation of the morphology and chemical composition of self-organized quantum dots and quantum wires are reviewed. Their application is demonstrated in experimental examples showing that a combination of small angle X-ray scattering with high-resolution X-ray diffraction can reveal both the shape and the chemical composition of the self-organized objects. (author)

International Nuclear Information System (INIS)

Elements Ti, Mn, Fe, Ni, Cu, Zn, Pb, Br, Rb and Sr were determined by the method of radionuclide X-ray fluorescence analysis with semiconductor detection in samples of Taraxacum officinale from various localities of Bratislava. The dependence of their content on the source and the degree of the air pollution was found out. (author).

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence method with a Si/Li semiconductor detector and "2"3"8Pu exciting source was used in the determination of Cr, Fe, Ni, Cu, and Zn content in industrial wastewaters. Simultaneously, the effects of the wastewaters on activated sludge biocenose were evaluated. (author) 6 refs.; 1 fig.; 1 tab.

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence method with Si/Li semiconductor detector and "2"3"8Pu exciting source was used for the determination of Cu, Ni, Zn and Pb in plant samples (Taraxacum officinale) from various localities near the highway D-61 Bratislava-Trnava (SR). (author) 2 refs.; 1 fig.; 1 tab.

Energy Technology Data Exchange (ETDEWEB)

Extensive research into the treatment and control of Volatile Organic Compounds (VOCs) from semiconductor industry manufacturing processes has identified the need for alternatives to existing combustion devices. Specifically, semiconductor manufacturing design is moving toward exploiting effective, small-scale, abatement control technologies for specific point-of-use (POU) waste streams associated with a particular component or manufacturing tool. The Silent Discharge Plasma (SDP) developed at Los Alamos National Laboratory is a nonthermal plasma technology created by a dielectric-ballasted electrical discharge. Influent gas-phase pollutants are destroyed in the reactor by the free radicals or electrons generated by the plasma. This paper examines the potential for SDP to be used in niche circumstances for POU control of VOC exhaust streams specific to the semiconductor industry. A sensitivity analysis is presented, showing ...

Science.gov (United States)

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

Energy Technology Data Exchange (ETDEWEB)

Perylene bisimides (PBIs) represent an important class of organic n-type semiconductors exhibiting a relatively high electron affinity among large-band-gap materials. Herein synthesis and characterization of several unsymmetrical N-substituted PBI dyes is presented and the thermotropic behavior, which is strongly affected by the respective N-substituents was investigated. Two different series of highly soluble and fluorescent derivatives have been synthesized: (1) PBIs bearing swallow-tailed alkyl chains, different in size or (2) one swallow-tailed alkyl chain and one branched oligoethylenglycolether. Synthesis of these PBIs is generally feasible by two distinct divergent synthesis approaches. Thermotropic behavior was studied by DSC, POM and XRD measurements. Inherent {pi}-{pi} interactions between cofacially orientated perylene molecules and the elliptic shape of the molecule favor the ordering in columns and self-organized architectures. Among them hexagonal ...

Energy Technology Data Exchange (ETDEWEB)

An overview is provided of an evolving atomistic and kinetic model of semiconductor growth that unifies the main features of strain relaxation in low and high lattice misfit heteroepitaxy. The model reveals a kinetic pathway for dislocation formation during growth with little or no energy cost at low misfits, thus providing a way out of the longstanding dilemma of too high dislocation nucleation energies predicted by classical theories of the equilibrium behavior of a fixed number of particles at low misfits. The essential kinetic process underlying the model are identified on the basis of comparison of the predictions of kinetic Monte-Carlo simulations of growth with real-time or in-situ data obtained in such experiments as reflection high-energy electron diffraction (RHEED) and scanning probe microscopy (SPM). Relative significance of these atomistic kinetic processes is shown to naturally lead to strain relaxation via defect initiation at low misfits while ...

CERN Document Server

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and Gamma-ray detection. The high atomic number of the materials (Z_{Cd} =48, Z_{Te} =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (Eg ~ 1.5 eV) allows us to operate the detector at room temperature. However, a considerable amount of charge loss in these detectors produces a reduced energy resolution. This problem arises due to the low mobility and short lifetime of holes. Recently, significant improvements have been achieved to improve the spectral properties based on the advances in the production of crystals and in the design of electrodes. In this overview talk, we summarize (1) advantages and disadvantages of CdTe and CdZnTe semiconductor detectors and (2) technique for improving energy resolution and photopeak efficiencies. Applications of these imaging detectors in ...

Energy Technology Data Exchange (ETDEWEB)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material. Thereafter, we established the methodology for the neutron ...

Energy Technology Data Exchange (ETDEWEB)

Two novel organic n-type semiconductors are investigated due to their function as electron acceptor for applications in organic electronic devices to widen the knowledge of how molecule structure influences the excitation processes in organic electronics. Bispyrenylfullerene and Octadecyl-Capronacidesterfullerene are C{sub 60} derivates with sidechains more featured compared to the commonly used[6,6] phenyl-C{sub 61}-butyric acid methyl ester (PCBM). In bulk heterojunction devices regioregular poly(3-hexylthiophene) (P3HT) was used as donor. The materials, pristine and in blend, were studied in view of light absorption, their quenching abilities of the P3HT photoluminescence as well as excited states. Furthermore, the spin state of the excited states was determined by light-induced electron spin resonance. Combining these complimentary experimental techniques, we obtained information on the generation of excited states, their nature, and the efficiency of the ...

International Nuclear Information System (INIS)

At room pressure and temperature the system EuOsub(1-x)Nsub(x) has two solid-solubility ranges, each with the NaCl structure: for 0 =< x =< 0.30 the system is ferromagnetic and semiconducting above the Curie temperature; for 0.92 =< x <1 it is metallic. Conductivity and Seebeck voltages indicate intrinsic behaviour above 310 K with an energy gap that decreases with increasing x for 0 =< x =< 0.30. Magnetic susceptibilities are consistent with 4f"6 configurations at x europium ions per molecule and a ferromagnetic Curie temperature Tsub(C) that increases with x. Low-temperature transport measurements were made only for 0.20 =< x =< 0.30: a minimum in the electrical conductivity, approximately 30 K above Tsub(C) correlates well with the onset of an anomalous low-temperature crystal contraction and with deviations from a Curie-Weiss law typical of short-range magnetic order. Below Tsub(C) there is a metal-to-semiconductor transition similar to ...

Science.gov (United States)

Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

Energy Technology Data Exchange (ETDEWEB)

Quaternary semiconductor compounds are ideal candidates for use in monolithic cascade solar cells because the lattice constant and the bandgap of such compounds can be independently varied. The quaternary semiconductor compound Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] not only is lattice matched to GaAs and Ge but also provides a current matched top cell for the GaInAsP/Ge monolithic cascade solar cell. Under concentration of 100 suns, the projected efficiency for such a cell is about 34%. The growth of Ga[sub 0.83]In[sub 0.17]As[sub 0.67]P[sub 0.33] lattice matched to GaAs and Ge has been demonstrated. GaInAsP solar cells have been grown on both GaAs and Ge substrates. A GaInAsP on GaAs solar cell with an active area efficiency of 23.2% for 1 sun, AM 1.5 direct illumination has been prepared. A proposed structure for the GaInAsP/Ge cascade cell is also given.

Energy Technology Data Exchange (ETDEWEB)

To attain reproducible and stable contacts to compound semiconductor devices, it is necessary to achieve thermodynamically stable phases after the reaction of metals with the compound semiconductor. In this study, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated. They are identified as MGa for M = Co, Rh, Ni, Pd, and Pt, monoarsenides of Co and Ni, diarsenides of Rh, Ir, Pd, and Pt, and Ir/sub 3/Ga/sub 5/. These phases, if deposited directly onto GaAs, will produce thermally stable contacts. In addition to the identification of these stable phases, analyses of the products of thin-film M/GaAs reactions by transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry reveal the distribution, grain size, and crystallographic texture of these end phases. Trends in these observations across the six metal/GaAs reactions studied are ...

International Nuclear Information System (INIS)

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. [copyright] 2001 American Institute of ...

International Nuclear Information System (INIS)

The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.

Energy Technology Data Exchange (ETDEWEB)

Sulfuric acid hydrogen peroxide mixtures (SPM) are commonly used in the semiconductor industry to remove organic contaminants from wafer surfaces. This viscous solution is very difficult to rinse off water surfaces. Various rinsing conditions were tested and the resulting residual acid left on the water surface was measured. Particle growth resulting from incomplete rinse is correlated with the amount of sulfur on the wafer surface measured by Time of Flight Secondary Ion Mass Spectroscopy (TOF-SIMS). The amount of sulfur on the wafer structure after the rinse step is strongly affected by the wafer film type and contact angle prior to the SPM clean.

Energy Technology Data Exchange (ETDEWEB)

This report summarizes the progress of the Solid State Photovoltaic Research Branch of the Solar Energy Research Institute (SERI) from October 1, 1988, through September 30,l 1989. Six technical sections of the report cover these main areas of SERIs in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Laser Raman and Luminescence Spectroscopy. Sections have been indexed separately for inclusion on the data base.

International Nuclear Information System (INIS)

This chapter is an overview of total-ionizing-dose and single-event hardening techniques and should be used as a guide to a range of research publications. It should be stressed that there is no clear and simple route to a radiation-tolerant silicon integrated circuit. What works for one fabrication process may not work for another, and there are many complex interactions within individual processes and designs. The authors have attempted to highlight the most important factors and those process changes which should bring improved hardness. The main point is that radiation-hardening as a procedure must be approached in a methodical fashion and with a good understanding of the response mechanisms involved.

International Nuclear Information System (INIS)

An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)

International Nuclear Information System (INIS)

Radionuclide x-ray fluorescence analysis was used for the determination of Fe, Zn, Br and Rb levels in whole blood from dilated cardiomyopathy patients and from a control group. The XRF-system consisted of a radionuclide source "1"0"9Cd, a semiconductor Si/Li detector connected to a multichannel analyzer. Fe content in blood of patients was significantly lower than that of the control. Zn content showed no deviation from normal range. Values for Br and Rb in patients highly exceed the range reported for them. (author) 4 tabs.; 9 refs.

International Nuclear Information System (INIS)

This paper describes the performance of AlGaN/GaN HEMTs with 2.4 #mu#m source-drain spacing. So far these are the smallest source-drain spacing AlGaN/GaN HEMTs which have been implemented with a domestic wafer and domestic process. This paper also compares their performance with that of 4 #mu#m source-drain spacing devices. The former exhibit higher drain current, higher gain, and higher efficiency. It is especially significant that the maximum frequency of oscillation noticeably increased. (semiconductor integrated circuits)

International Nuclear Information System (INIS)

The composite wave variational version of the APW (augmented plane wave) method is used to obtain the electronic band structure of the compounds boron phosphide and boron arsenide at the high symmetry points #GAMMA#, X, and L. The tight binding interpolation scheme of Slater and Koster is used to calculate the rest of the band structure. The results show that both these materials are indirect band gap semiconductors. The density of states, and the imaginary part of the dielectric constant is also calculated. The theoretical results are compared with the reported experimental and theoretical data. (author).

International Nuclear Information System (INIS)

Extended X-ray absorption fine structure (EXAFS) measurements of bismuth clusters in the temperature range of 23 -300 K have been performed using synchrotron radiation in order to investigate the size dependent phase transition. The inter-atomic distances around 3.0 A and 3.6 A are attributed to the nearest neighbors within the layer and between layers, respectively. EXAFS functions were analysed by the curve fitting method within a symmetric distribution approximation. The nearest neighbor distance of the 0.5 nm thick films is shorter than that of the 300 nm thick films at all the temperatures, which is related to the reduction of the inter-layer correlation.

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence method with a Si/Li semiconductor detector and "2"3"8Pu exciting source was used in the study of Mn, Fe, Cu, Zn, and Pb content of solid emissions, raw and final materials of a brick factory. From the point of view of metal content, the working environment if the brick factory is safe for workers. (author) 2 refs.; 2 figs.; 1 tab.

Science.gov (United States)

Continuous wave lasing operation with the shortest wavelength for semiconductor lasers was obtained from AlGaInP double heterostructure lasers at 77 K. The structure was grown by metalorganic vapor phase epitaxy. Lasing wavelength was 583.6 nm (yellow). Threshold current was 43 mA (1.9 kA/cm/sup 2/). Magnesium was adopted as a p-type dopant, and was proved to be preferable for a high aluminum composition AlGaInP cladding layer.

International Nuclear Information System (INIS)

Mo gate Mos capacitors exhibit a negative shift of their C-V characteristic by up to 240 mV, at 125 C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relevant equivalent circuits are reviewed. The single-state interface state density, at the semiconductor-dielectric interface, decreases from 2.66 x 10"1"1 cm"-"2 e-v"-"1, in pure nitrogen, to 2.5 x 10"1"1 cm"-"2 e-v"-"1 in 1000 ppm hydrogen in nitrogen mixtures, at this temperature. (Author)

International Nuclear Information System (INIS)

The physical foundations are described of radionuclide X-ray fluorescence analysis (RXFA) and the table shows the values of K- and L-absorption thresholds and the K- and L-line energies of elements. The calculation of the intensity of characteristic radiation during RXFA proceeds from relations derived for conventional X-ray fluorescence analysis. The choice of the radionuclide source is ruled by the nature of the analysed substance and the used detection technique. The diagram shows the areas of radionuclide sources and the energy of the fluorescence radiation of elements. The table shows the spectra of radionuclide sources suitable for the purposes of RXFA measured by semiconductor Si(Li) and Ge(Li) detectors. (ES).

Energy Technology Data Exchange (ETDEWEB)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence band edges. In the presence of an electric ...

International Nuclear Information System (INIS)

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping treatment. However, Mn-, ...

Energy Technology Data Exchange (ETDEWEB)

Raman scattering was observed from thin film optical waveguides of cellulose acetate exposed to water vapor from 0% to 100% relative humidity (RH), and from dilute solutions of water in methyl acetate. Spectra of cellulose acetate (CA398, 39.8% acetyl) at low RH and cellulose triacetate (CTA) at low and high RH are consistent with the presence of water monomers that are weakly hydrogen bonded to acetyl C=O groups. Differences between the spectra of water in CA398 and CTA at low RH are attributed to sequential hydrogen bonding involving OH groups in CA398. At high RH, CA398 and CTA (to a lesser extent) show bands attributed to water/water interactions that are similar to those found in sequentially hydrogen-bonded hydrates. CA398 films that are annealed at high temperatures exhibit decreased water/water interactions at high RH. Exposure of CA398 films to D/sub 2/O converts > 90% of all polymer OH groups to OD groups. This indicates that water is accessible to ...

Energy Technology Data Exchange (ETDEWEB)

A hypothesis of microwave-induced circulatory under perfusion was tested in ketamine anesthetized rats whose heart rate, mean arterial pressure, pulse pressure, respiration rate, and body temperatures were monitored continuously. Fifty-eight ventral head and neck exposures in a waveguide consisted of sham-exposure and exposure to continuous wave (CW) and pulsed 1.25 GHz microwaves for 5 min. The 0.5 Hz and 16 Hz pulsemodulated microwaves were delivered at 400 kW peak power. The CW microwaves were 2 and 6.4 W. The average specific absorption rate was 4.75 W/kg per watt transmitted in the brain and 17.15 W/kg per watt transmitted in the neck. Respiration rate and mean arterial pressure were not altered. Changes in heart rate and pulse pressure were observed in rats exposed to higher power but not to the lower average power microwaves. Depression of pulse pressure, an indication of a decrease in stroke volume, and increased or decreased heart rate were noted in ...

British Library Electronic Table of Contents (United Kingdom)

Metallic Zn films were deposited on glass substrates by electron-beam evaporation. ZnO films were synthesized by thermal oxidation of Zn metallic films in air. At the annealing temperature of 550 ?C, ZnO nanowires appeared on the surface, which mainly result from the decrease of oxidation rate. A ZnO ultraviolet photodetector was fabricated based on a metal-semiconductor-metal planar structure. The detector showed a large UV photoresponse with an increase of two orders of magnitude. It is concluded that promising UV detectors can be obtained on ZnO films by thermal oxidation of Zn metallic films. The ways of performing spectral response measurements for polycrystalline ZnO films are also discussed.

British Library Electronic Table of Contents (United Kingdom)

Two analytical methods were proposed in this research, coupled electro-thermal finite element (FE) analysis and thermal-mechanical FE analysis, to analyze the mechanical behavior of bonding wire of power module under cyclic power loads, and the International Electrotechnical Commission standard is adopted in conducting a power cycling test. The exterior temperature distribution was measured by an infrared thermometer. Moreover, the junction temperature is calculated from the given thermal impedance of the semiconductor chip, chip power loss, and case temperature. Subsequently, the simulated temperature distribution via electro-thermal FE analysis is compared with experimental results to validate the methodology used in the aforementioned analysis. The analysis shows compressive stress at t...

Science.gov (United States)

Cadmium telluride single crystals were grown heavily doped with chloride by the THM method. The resulting crystals were n-type with free carrier concentrations of the order of 10('12)/cm at room temperature. Hall effect studies revealed room temperature mobilities between 30 and 350 cm('2)/v-sec and resistivites between 2 x 10('3) and 10('4) ohm-cm. Studies were made of the gamma and alpha counting characteristics of these crystals with metal, metal-semiconductor, and metal-insulator electrodes. It was found that the MIS and MSS structures resulted in significant improvement over the MS structures in counting, signal-to-noise and energy resolution.

International Nuclear Information System (INIS)

The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well

Science.gov (United States)

An estimate of the undercounted electrostatic energy terms in local-density-functional total-energy calculations for nonmetallic systems with separated electron-hole pairs is used to derive a simplified correction to density-functional - theory band gaps. The correction is evaluated for Ne, Ar, Kr, LiF, NaCl, CsCl, MgO, CaS, BaS, C, AlP, and Si. The band-gap errors are reduced from 40-50% to 10-15% for most of the systems studied. Conduction-band corrections are shown to be nearly as large as valence-band corrections in free-electron-like semiconductors. 28 references, 1 figure.

Energy Technology Data Exchange (ETDEWEB)

A novel system for real-time radiation monitoring in reactor or accelerator facilities has been studied using an imaging plate. The authors made a feasibility study on a new neutron detection system using both photostimulated luminescence (PSL) and prompt luminescence (PL) generated in a neutron imaging plate (NIP) when the NIP is irradiated by neutrons. A readout system consisting of a semiconductor laser and a photomultiplier tube was fabricated for the purpose. It was confirmed that the system can measure both PSL and PL, where Am-Li was used as a neutron source. It may be possible to establish a new wide-range neutron monitoring system using the developed system as a PL mode normally, and as a PSL mode in case of intense neutron dose that cannot be measured in a PL mode because of saturation of the detection system. (author)

British Library Electronic Table of Contents (United Kingdom)

A method for range-resolved gas sensing using path-integrated optical systems is presented. The method involves dividing an absorption path into several measurement segments and extracting the gas concentration in each segment from two path-integrated measurements. We implemented the method with tunable lasers (a 1389-nm VCSEL and a 10.9-?m pulsed quantum cascade laser) and a group of retro reflectors (RRs) distributed along absorption paths. Using a rotating mirror with the VCSEL configuration, we could scan a group of seven tape RRs spaced by 10?cm in ??9?ms to extract an H2O concentration profile. Reduced H2O concentrations were recorded in the segments purged with dry air. Hollow corner cube RRs were used in the quantum cascade laser configuration at distances up to 1.1?km from the las...

International Nuclear Information System (INIS)

Microprocessor based ''smart'' pressure, level, and flow transmitters were tested to determine the radiation hardness of this class of electronic instrumentation for use in reactor building applications. Commercial grade Complementary Metal Oxide Semiconductor (CMOS) integrated circuits used in these transmitters were found to fail at total gamma dose levels between 2500 and 10,000 rad. This results in an unacceptably short lifetime in many reactor building radiation environments. Radiation hardened integrated circuits can, in general, provide satisfactory service life for normal reactor operations when not restricted to the extremely low power budget imposed by standard 4--20 mA two-wire instrument loops. The design of these circuits will require attention to vendor radiation hardness specifications, dose rates, process control with respect to radiation hardness factors, and non-volatile programmable memory technology. 3 refs., 2 figs.

International Nuclear Information System (INIS)

Early failure of an induction-hardening carbon steel pipe, which was used to transport tailing slurry, was caused by pitting corrosion. The microstructure on the internal pipe surface layer was found being a mixture of martensite, pearlite and ferrite. In this work, the pitting corrosion behavior of each constitute in the microstructure of steel is investigated with electrochemical noise analyses; the electronic properties of passive films were studied with Mott-Schottky relationship. It is found that the passive films formed on the materials under investigation are highly disordered n-type semiconductors. The high-to-low pitting susceptibility is ferrite > martensite > pearlite. The pitting resistance is related to the semiconductive nature of the passive film formed on each constitute. The pitting susceptibility increases with the donor concentration in the passive films. (author)

International Nuclear Information System (INIS)

Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke the potential dependent bandgaps used by previous authors.

Energy Technology Data Exchange (ETDEWEB)

The photocatalyzed degradation of pyridine in the gas phase was investigated using titanium dioxide semiconductor supported on mordenite. The complete mineralization was found to occur over a catalyst containing 75 wt% TiO{sub 2} and 25 wt% mordenite in about 180 min in the presence of saturated water vapor at O{degrees}C (4.6 Torr). Low water vapor pressure of 0.096 Torr was found to be sufficient to achieve a reasonably high percentage and rate of degradation. Diffusion of pyridine within the catalyst adversely affects the activity when the thickness of the catalyst coating exceeds the penetration depth of illumination. The activity of the zeolite-supported catalysts was higher than that of TiO{sub 2}. The photonic efficiency for the complete mineralization of pyridine to CO{sub 2} was determined to be 0.48. 29 refs., 6 refs., 1 tab.

Energy Technology Data Exchange (ETDEWEB)

This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

Energy Technology Data Exchange (ETDEWEB)

An all solid-state kicker pulser for a proton radiography system has been designed. Multiple solid-state modulators stacked in an inductive-adder configuration are utilized in this kicker pulser design. Each modulator is comprised of multiple metal-oxide-semiconductor field-effect transistors (MOSFETs) which quickly switch the energy storage capacitors across a magnetic induction core. Metglas is used as the core material to minimize loss. Voltage from each modulator is inductively added by a voltage summing stalk. A circuit model of a prototype inductive adder kicker pulser modulator has been developed to predict the performance of the pulser modulator. The modeling results are compared with experimental data.

International Nuclear Information System (INIS)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al_xGa_1_-_xInP_2; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. copyright 1996 The American Physical Society.

Energy Technology Data Exchange (ETDEWEB)

The difference between the two nonclassical lights, i.e., the squeezed state and number-phase minimum uncertainty state (NUS) is discussed. The four different generation principles for NUS are described. They are: unitary evolution using self-phase modulation; nonunitary state reduction by the first kind measurement; controlled state reduction by quantum correlation measurement-feedback, and high saturated laser oscillation with suppressed-pump-noise. The constant current-driven semiconductor laser based on the last principle generated the NUS with photon number noise reduced below the standard quantum limit by 40 percent in the entire frequency region from dc to 1.1 GHz. Several applications of NUS including quantum communication, quantum mechanical computers and interferometric gravitational detection are discussed briefly. This presentation is represented by viewgraphs only.

Energy Technology Data Exchange (ETDEWEB)

A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.

International Nuclear Information System (INIS)

Trends in front-end-of-line technology are discussed. At the chip level, many of the important parameters are published in the National Technology Roadmap for Semiconductors in 1994. At the device and circuit level, both bipolar and CMOS are scalable. However, the large standby power of bipolar circuits severely limits the integration level of bipolar chips. The inherently low standby power of CMOS, on the contrary, allows the integration level of CMOS circuits to continue increasing with scaling. In reality, both the electric field and power density of CMOS devices have been gradually rising over the generations owing to non-scaling effects of thermal voltage and silicon bandgap. As power supply voltage reaches 1.5V and below, circuit performance can only be gained at the expense of higher active or standby power of the chip. Implications of device scaling on contact and silicide technology are addressed. Trends of local and global interconnect scaling are ...

International Nuclear Information System (INIS)

The excitation functions of the reactions "9"8Mo(d,p)"9"9Mo and "1"0"0Mo(d,p)"1"0"1Mo have been determined by irradiation of stacked foils with deuterons of energies less than 13 MeV and non-destructive determination of the absolute activity of the Mo radioisotopes by semiconductor #gamma#-ray spectrometry. From the excitation functions, the thick-target yields and the saturation production rates of "9"9Mo and "1"0"1Mo for deuteron energies of 13.0 MeV and 11.7 MeV have been calculated. Implications for the production of "9"9Mo for generators of sup(99m)Tc are discussed. (author).

DEFF Research Database (Denmark)

We propose a new physical implementation of spin qubits for quantum information processing, namely defect states in antidot lattices defined in the two-dimensional electron gas (2DEG) at a semiconductor heterostructure. Calculations of the band structure of a periodic antidot lattice are presented. A point defect is created by removing a single antidot, and calculations show that localized states form within the defect, with an energy structure which is robust against thermal dephasing. The exchange coupling between two electrons residing in two tunnel-coupled defect states is calculated numerically. We find results reminiscent of double quantum dot structures, indicating that the suggested structure is a feasible physical implementation of spin qubits.

International Nuclear Information System (INIS)

Off-axis electron holography is used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope (TEM) using focused ion beam (FIB) milling from the substrate side of the semiconductor device. The measured electrostatic potential is compared with results obtained from TEM specimens prepared using the more conventional 'trench' FIB geometry. The use of carbon coating to remove specimen charging effects, which result in electrostatic fringing fields outside 'trench' specimens, is demonstrated. Such fringing fields are not observed after milling from the substrate side of the device. Analysis of the measured holographic phase images suggests that the electrically inactive layer on the surface of each FIB-milled specimen typically has a thickness of 100 nm.

Energy Technology Data Exchange (ETDEWEB)

This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL's in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy's National Photovoltaic Research Program plans.

International Nuclear Information System (INIS)

In this work passive films formed in AISI 304 stainless steel were envisaged as semiconductors and studied by means of photoelectrochemistry and Mott-Schottky plots. The passive films were potentiostatically formed at different potentials (0.2-0.8V) in a basic borate/boric acid solution without and with addition of NaCl (0.5 and 1g/l) and at various temperatures in the range 8-60"oC. The influence of these parameters on the photocurrent, quantum efficiency, bandgap energy and density of charge carriers was determined. The results show that the experimental conditions at which the films are formed influence the semiconductive properties of the film, which seem to be related to the higher or lower stability of the film. An Arrhenius type of relationship was also found between the density of charge carriers and temperature, leading to the determination of an activation energy. (author) 13 refs., 7 figs.

International Nuclear Information System (INIS)

Energy harvesting systems stimulate the development of power management for low power consumption applications. Improving the converter efficiency of power management circuits has become a significant issue in energy harvesting system design. This paper presents a variable step-down conversion ratio switched capacitor (SC) DC-DC converter to advance the converter efficiency of charge on the stored capacitor in a wireless monitoring system of orthopedic implants. The converter is designed to work at 1 MHz switching frequency and achieves 15 to 2 V conversion. Measurement results show that the converter efficiency can reach 42% including all circuit power consumption, which is much higher than previous work. (semiconductor integrated circuits)

Energy Technology Data Exchange (ETDEWEB)

The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from ...

Energy Technology Data Exchange (ETDEWEB)

This thesis deals with the special electronic properties of the transition-metal aluminides. Following quasicrystals and their approximants it is shown that even materials with small elementary cells exhibit the same surprising effects. So among the transition-metal aluminides also semi-metallic and semiconducting compounds exist, although if they consist of classic-metallic components like Fe, Al, or Cr. These properties are furthermore coupled with a deep pseusogap respectively gap in the density of states and strongly covalent bonds. Bonds are described in this thesis by two eseential properties. First by the bond charge and second by the energetic effect of the bond. It results that in the caes of semiconducting transition-metal aluminides both a saturation of certain bonds and a bond-antibond alteration in the Fermi level is present. By the analysis of the near-order in form of the so-calles coordination polyeders it has been succeeded to establish a simple rule for ...

Energy Technology Data Exchange (ETDEWEB)

As semiconductor device density and wafer area continue to increase, the volume of in-line and off-line data required to diagnose yield-limiting conditions is growing exponentially. To manage this data in the future, analysis tools will be required that can automatically reduce this data to useful information, e.g., by assisting the engineer in rapid root-cause diagnosis of defect generating mechanisms. In this paper, the authors describe a technology known as Spatial Signature Analysis (SSA) and its application to both optically-detected defect data as well as electrical test (e-test) bin data. The results of a validation study are summarized that demonstrate the effectiveness of the SSA approach on optical defect wafermaps through field-testing at three semiconductor manufacturing sites on ASIC, DRAM and SRAM products. This method has been extended to analyze and interpret electrical test data and to provide a pathway for correlation of this ...

Energy Technology Data Exchange (ETDEWEB)

The novel optical, electronic, and/or magnetic properties of metal and semiconductor nanoparticles have resulted in extensive research on new methods for their preparation. An ideal preparation method would allow the particle size, size distribution, crystallinity, and particle shape to be easily controlled, and would be applicable to a wide variety of material systems. Numerous preparation methods have been reported, each with its inherent advantages and disadvantages; however, an ideal method has yet to emerge. The most widely applied methods for nanoparticle preparation include the sonochemical reduction of organometallic reagents,(1&2) the solvothermal method of Alivisatos,(3) reactions in microemulsions,(4-6) the polyol method (reduction by alcohols),(7-9) and the use of polymer and solgel materials as hosts.(10-13) In addition to these methods, there are a variety of methods that take advantage of the unique properties of a supercritical fluid.(14&15) ...

Science.gov (United States)

The galvanomagnetic properties of single-crystal samples of the Bi{sub 0.93}Sb{sub 0.07} semiconductor alloy with the electron density n = 1.6 x 10{sup 17} cm{sup -3} in magnetic fields up to 14 T at T = 1.6 K have been investigated. The resistivity {rho} and Hall coefficient R have been measured as functions of the magnetic field directed along the binary axis of a crystal for a current flowing through a sample along the bisector axis; i.e., the components {rho}{sub 22} and R{sub 32,1} have been measured. The strong anisotropy of the electron spectrum of the samples makes it possible to separately observe quantum oscillations of the magnetoresistance {rho}{sub 22}(H) for H -parallel C{sub 2} in low magnetic fields for two equivalent ellipsoids with small extremal cross sections (secondary ellipsoids) and in high magnetic fields for electrons of the ellipsoid with a large extremal cross section (main ellipsoid). An increase in the energy of the electrons of ...

Energy Technology Data Exchange (ETDEWEB)

An x-ray zone plate was fabricated using the novel approach of focused ion beam (FIB) milling. The FIB technique was developed in recent years, it has been successfully used for transmission electron microscopy (TEM) sample preparation, lithographic mask repair, and failure analysis of semiconductor devices. During FIB milling, material is removed by the physical sputtering action of ion bombardment. The sputter yield is high enough to remove a substantial amount of material, therefore FIB can perform a direct patterning with submicron accuracy. The authors succeeded in fabricating an x-ray phase zone plate using the Micrion 9500HT FIB station, which has a 50 kV Ga{sup +} column. Circular Fresnel zones were milled in a 1.0-{micro}m-thick TaSiN film deposited on a silicon wafer. The outermost zone width of the zone plate is 170 nm at a radius of 60 {micro}m. An achieved aspect ratio was 6:1.

Science.gov (United States)

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and n{sub eff} is the effective index of refraction of the laser cavity, and the spacer ...

International Nuclear Information System (INIS)

Semiconductor quantum dots (QDs) are a promising approach to realize a single-photon source. To avoid bulky and expensive laser systems for future applications, electrical excitation is desirable. InP QDs are especially suited, as they emit in the red spectral range and therefore in the optimal range of commercial detectors. Additionally, they have been shown to be capable of emitting single photons up to 80 K. Thus, we embedded InP QDs in the intrinsic region of a p-i-n diode. To form single devices, 100 #mu#m mesas were etched and supplied with electrical contacts. We investigated the electroluminescence from single QDs and performed second-order auto correlation measurements to verify single-photon emission. To prevent expensive helium cooling and reach operation above 80 K, we investigated the influence of elevated temperature on the performance of our device. Since triggered single-photon emission is required for most applications, sub-nanosecond pulses were ...

British Library Electronic Table of Contents (United Kingdom)

The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...

International Nuclear Information System (INIS)

Mott-Schottky (M-S) analysis is an effective approach to investigate the electronic property of passive films of metals, and it is well suitable for the passive film with single space charge capacitance. But there is no proper method to analyze the Csc-2 vs. Vm plots of passive films with several space charge capacitances in series connection, such as bipolar passive films. In this paper, the relationship between the space charge capacitance of the bipolar passive film and the applied potential was deduced and the features of corresponding plots were given out simultaneously. Accordingly, a non-linear fitting method was presented to analyze the Csc-2 vs. Vm plots of bipolar passive films. Then the method was used to study the semiconductor characteristics of bipolar passive films formed on the surface of Nickel base alloy after being corroded in the environments with high temperatures and high partial pressures of H2S/CO2. The fitting results indicate that the ...

International Nuclear Information System (INIS)

The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO_2-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also decreases the doping density in the case of the ...

Energy Technology Data Exchange (ETDEWEB)

Self-assembled monolayers (SAMs) on various metal, semiconductor or insulator substrates can be easily modified with specific functional groups of interest and have promising applications in surface wetting (hydrophobic/hydrophilic modification), tribology, corrosion protection, sensor electrodes modification, molecular and biomolecular recognition, protein adsorption, cell adhesion, and molecular- or organic-electronic device fabrications. In this paper, we highlight recent progress in the development of SAMs on solid substrates as well as their practical applications, with particular emphasis on the characterization of self-assembled aromatic thiol monolayers with different functional groups on Au(1 1 1) using synchrotron-based photoemission spectroscopy and near-edge X-ray absorption fine structure measurements. The SAM-related molecular orientation, electronic structures, and chemical bonding are presented. Using copper(II) phthalocyanine as a model system, we ...

Energy Technology Data Exchange (ETDEWEB)

The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been observed. At last has ...

Energy Technology Data Exchange (ETDEWEB)

A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due to the second mechanism), can be explained. Numerical computations of high ...

Energy Technology Data Exchange (ETDEWEB)

Abstract: We report for the selective-area chemical synthesis of semiconductor single-crystal organic nanowires of silver-tetracyanoquinodimethane (Ag-TCNQ). Straight and smooth Ag-TCNQ nanowires can be produced and patterned on micrometer and nanometer scale on silicon substrates covered with a thin layer of Ag film through the reaction of TCNQ and Ag in a simple gas-solid chemical reaction process. Ag-TCNQ nanowires are characterized by UV-vis, IR and Raman spectroscopy, respectively. The Ag-TCNQ nanowires grows preferentially along the [100] direction of strong - stacking of Ag-TCNQ molecules. Nanodevices based on these nanowires are fabricated using focus ion beam (FIB) technique. Electrical properties are characterized and I-V hysteresis is observed, which shows memory effect with electrical switching of three orders on-off ratio. These nanowires could be potential for use in optical storage, ultrahigh-density nanoscale memory and logic devices.

International Nuclear Information System (INIS)

Process control transmitters that incorporate digital signal processing could be used advantageously in nuclear power plants; however, because such transmitters are too sensitive to radiation, they are not used. The Electric Power Research Institute sponsored work at Sandia National Laboratories under EPRI contract RP2614-58 to determine why SMART transmitters fail when exposed to radiation and to design and demonstrate SMART transmitter circuits that could tolerate radiation. The term ''SMART'' denotes transmitters that contain digital logic. Tests showed that transmitter failure was caused by failure of the complementary metal oxide semiconductors (CMOS)-integrated circuits which are used extensively in commercial transmitters. Radiation-hardened replacements were not available for the radiation-sensitive CMOS circuits. A conceptual design showed that a radiation-tolerant transmitter could be constructed. A prototype for an analog-to-digital converter subsection ...

Energy Technology Data Exchange (ETDEWEB)

There has been considerable interest in producing and studying nanoparticle materials because of the effect of size on their structure, physical and chemical structure. Most studied nanoparticle semiconductors belong to the II-VI group, as they are relatively easy to synthesize and are generally prepared as particulates or in thin film form. Among II-VI compounds, CdS is one of the most studied materials. There are different ways to synthesize CdS nanoparticles such as colloidal particles, chemical decomposition, sol-gel, gas evaporation, magnetron sputtering, electrostatic deposition, and etc. {gamma}-irradiation is one of the effective methods for synthesis of nanomaterials. These nonomaterials have been extensively used in the preparation of nanocrystalline metals, metal oxides, and metal-polymer composites. However, The preparation of CdS nanoparticle and CdS/ polyacrylonitrile nanocomposite by {gamma}-irradiation method at room temperature and ambient ...

International Nuclear Information System (INIS)

Properties of photoconductive ultraviolet detectors fabricated on ZnO films were presented. Highly c-axis oriented ZnO films were grown on glass substrates by pulsed laser deposition. Ultraviolet photodetectors were fabricated based on metal-semiconductor-metal planar structures. The photoresponsivity and the quantum efficiency are much higher in the ultraviolet range than in the visible range, and the peak values are around 360 nm. Photocurrent transients show that the detector has a large photocurrent with the peak value of 2.8 mA, and a slow photoresponse with a rise time of 5 min and a decay time of 7 min. The response curve of the detector is fitted well with exponential curve. The large photocurrent should result from the both effects of the accumulation of conduction electrons and the decrease of the barrier height between crystallites. The relaxation time constant #tau# obtained from the curve fitting represents the time accumulation during the process. The ...

International Nuclear Information System (INIS)

The credibility of the model proposed by Ghosh in predicting the refractive indices of mixed semiconductor crystals of technological importance within their miscibility range as a function of band gap is demonstrated. The high-frequency refractive indices of four quaternary alloys Al_xGa_1_-_x_-_yIn_yP (y = 0.49, 0 #<=# x #<=# 0.51), InSb_xAs_1_-_x_-_yP_y (y = 2.2x, 0 #<=# x #<=# 0.313, 0 #<=# y #<=# 0.638), Cd_xZn_1_-_x_-_yHg_ySe (x + y = 1, 0.153 #<=# x #<=# 0.684, 0.316 #<=# y #<=# 0.847), and CdS_1_-_x_-_ySe_xTe_y (x + y = 1, 0.15 #<=# x #<=# 0.93, 0.07 #<=# y #<=# 0.85) are calculated according to the relation n"2-1 = A/(E_g + B)"2 where A is an energy gap dependent constant and B is a constant depending on crystal ionicity. The calculated values show excellent agreement with the experimental data thus justifying the validity of the model.

Energy Technology Data Exchange (ETDEWEB)

Several configurations of moderating and shielding materials have been designed and measured on the LVR-15 reactor for boron neutron capture therapy (BNCT) purposes. To determine the neutron and gamma ray space-energy distributions in the cylindrical geometry, the two-dimensional code DOT with the coupled neutron-gamma data library DLC-36 was used. The experimental verification of the beam parameters was performed in the LVR-15 reactor thermal column empty space with layers of graphite, aluminium, alumina, lead and bismuth. Attention was paid to establishing techniques and instrumentation for monitoring the neutron and gamma ray dose and beam quality. The thermal and epithermal flux densities were measured by activation foils, the neutron spectrum was determined with a Bonner spectrometer and gamma ray background with a scintillation spectrometer. The distribution of thermal neutrons in the human head phantom was mapped with a small semiconductor detector (Si[sup ...

Science.gov (United States)

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found parameters of the ...

International Nuclear Information System (INIS)

A combination of measuring instruments, consisting of a Beta-Sedimeter and a radionuclide X-ray fluorescence instrument, is described. With the Beta-Sedimeter the C-14-radiation is measured. Through direct irradiation with photons of a Pu238-source in an ancillary irradiation chamber and energy dispersing measurement of the K- and L-radiation resp. of the excited heavy metals with the aid of a Si(Li)-semiconductor detector and a 4-channel analyzer the heavy metal concentrations of the heavy metals Zn, Cr, Ni and Pb are determined. For the determination of cadmium the indirect excitation with Am-241 and Dy-targets is described. The system produces records and operates fully automatically in a step-by-step mode with a testing cycle of 45 minutes. In connection with the process monitoring of the wastewater from a zinc plating plant during a period of 8 months the concentration of the solid material and of the metals Cr and Zn, which were considered to be ...

International Nuclear Information System (INIS)

We have measured the lattice relaxation around As in Si at a homogeneous As concentration of 4x10"1"8 cm"-"3 by EXAFS spectroscopy. From the absorption spectra, distances up to the 4th shell could be extracted. A sizeable misfit due to an increased distance is only observed for the 1st shell. Complementing our experimental work we have performed ab initio calculations based on the density functional theory with the WIEN97 package which uses the linearised augmented plane wave method and with the FHI96md program which uses first-principles pseudo-potentials and a plane wave basis set to investigate the size dependence of the super-cells constructed around one substitutional As atom. The calculations yielded good agreement with our EXAFS experiment so that the determined relaxations can be used as a solid basis for further interpretations of derived parameters such as hyperfine interaction parameters in defect complexes.

Energy Technology Data Exchange (ETDEWEB)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD ...

Science.gov (United States)

Efficient, low-temperature conversion of infrared light into visible light (red, orange, green) is reported at single heterojunctions and undoped quantum wells of GaAs and ordered Al{sub {ital x}}Ga{sub 1{minus}{ital x}}InP{sub 2}; an increase in photon energy of 700 meV is obtained. The signal originates from the high-band-gap layers and disappears only if the excitation energy is tuned below the GaAs band gap. The intensity of the up-converted photoluminescence (PL) is found to decrease significantly slower with increasing temperature than that of the regular PL and it remains observable up to 200 K. Interface-induced cold Auger processes along with the presence of trapped states for both electrons and holes in these ordered alloys account for this nonlinear mechanism. A colinear double-beam experiment confirms this. {copyright} {ital 1996 The American Physical Society.}

International Nuclear Information System (INIS)

Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strained-Si (s-Si) p-MOSFETs (metal-oxide-semiconductor field-effect transistors) along (110) and (100) channel directions. In bulk Si, a mobility enhancement peak is found under uniaxial compressive strain in the low vertical field. The combination of (100) direction uniaxial tensile strain and substrate-induced biaxial tensile strain provides a higher mobility relative to the (110) direction, opposite to the situation in bulk Si. But the combinational strain experiences a gain loss at high field, which means that uniaxial compressive strain may still be a better choice. The mobility enhancement of SiGe-induced strained p-MOSFETs along the (110) direction under additive uniaxial tension is explained by the competition between biaxial and shear stress.

Science.gov (United States)

The specification describes a semiconductor solar cell and fabrication process therefor wherein a thin N-type gallium arsenide layer is deposited on a larger P-type substrate layer which is selected from the group of III-V ternary compounds consisting of aluminum phosphide antimonide, AlPSb, and aluminum indium phosphide, AlInP. P-type impurities are diffused from the substrate layer into a portion of the thin N-type gallium arsenide layer to form P-type region wherein which defines a PN junction in the thin gallium arsenide layer. Thus, the quantity of gallium arsenide required to provide this PN photovoltaic junction layer in the cell is minimized, and th P-type substrate serves as a high bandgap window layer for the cell. Such high bandgap of this window material is especially well suited for efficiently transmitting the blue spectrum of sunlight to the PN junction, thus enhancing the power conversion efficiency of the solar cell.

Energy Technology Data Exchange (ETDEWEB)

The following work deals with the realization, characterization and modeling of GaInP / AlGaInP high power semiconductor laser diodes in the visible wavelength range. In addition to the exploration and optimization of efficiency, temperature stability and maximum output power of multi-mode lasers especially methods for longitudinal and lateral mode stabilization of high power laser diodes have been investigated. Although often the focus of optimization is on the threshold current density, in this work the performance of the laser diode for an operation point around 1 Watt under continous wave operation is regarded as the figure of merit. It turns out that low carrier densities are key for an efficient reduction of the heterobarrier leakage currents. In addition, large optical cavity structures with low internal losses enable high external quantum efficiencies even for long cavities. Finally high laser effiency as well as an efficient cooling leads to a reduced ...

International Nuclear Information System (INIS)

The lasing of the first free-electron laser (FEL) in the world was successfully carried out in 1977, so the history of FELs as a light source is not so long. But FELs are now utilized for research in many scientific and engineering fields owing to such characteristics as tunability of the wavelength, and short pulse and high peak power, which is difficult utilizing a common light source. Research for industrial applications has also been carried out in some fields, such as life sciences, semiconductors, nano-scale measurement, and others. The task for the industrial use of FEL is the realization of high energy efficiency and high optical power. As a means of promoting realization, the combining of an FEL and superconducting linac is now under development in order to overcome the thermal limitations of normal-conducting linacs. Further, since tuning the wavelength is carried out by changing the magnetic density of the undulator, which is now induced by moving part ...

International Nuclear Information System (INIS)

Focused Ion Beams are an important approach for nanostructure fabrication in the semiconductor industry and material sciences. Applications in sputtering and ion induced deposition of materials are investigated. The IMSA FIB system equipped with the high resolution Orsay Physics CANION M31plus ion column with current densities up to 10 A/cm"2 including a gas injection system is applied. In this work the ion beam induced chemical vapour deposition of tungsten, wherefore tungsten hexacarbonyl as precursor gas is used for a first investigation. Conductive tungsten-nanowires with smallest cross-section upon a substrate of Si and SiO_2 are produced. The ion beam parameters of this focused ion beam system are optimized for the metal deposition. A short insight in the theory of layer nucleation and growth induced by the ion beam during the metal deposition is given. The layer quality is determined by Auger electron analysis which shows the components in atomic percent ...

Energy Technology Data Exchange (ETDEWEB)

The near normal incidence reflectivity of the ferromagnets U/sub 3/P/sub 4/ and U/sub 3/As/sub 4/ and the isostructural but diamagnetic compounds Th/sub 3/P/sub 4/ and Th/sub 3/As/sub 4/ has been measured from 0.03 to 12 eV. Trithorium tetraphosphide and tetraarsenide are shown to be indirect gap semiconductors with gap energies of 0.43 and 0.39 eV, respectively. U/sub 3/P/sub 4/ and U/sub 3/As/sub 4/ display similar sets of p..-->..d transitions than the corresponding thorium compounds, however, they are shifted by 0.85 eV to lower photon energies. It is concluded that the uranium compounds are metals due to a merging of the valence p band into the 6d conduction band giving direct experimental evidence for a p-f mixing effect of the same size. Energy level schemes are derived.

Science.gov (United States)

Inductively coupled fluorocarbon (CF4/Ar and C4F8/Ar) plasmas were used to etch HfO2, which is a promising high-dielectric-constant material for the gate of complementary metal-oxide-semiconductor devices. The etch rates of HfO2 in CF4/Ar plasmas exceeded those in C4F8/Ar plasmas. The tendency for etch rates to become higher in fluorine-rich (high F/C ratio) conditions indicates that HfO2 can be chemically etched by fluorine-containing species. In C4F8/Ar plasmas with a high Ar dilution ratio, the etch rate of HfO2 increased with increasing bias power. The etch rate of Si, however, decreasd with bias power, suggesting that the deposition of carbon-containing species increased with increasing the power and inhibited the etching of Si. The HfO2/Si selectivity monotonically increased with increasing power, then became more than 5 at the highest tested bias power. The carbon-containing species to inhibit etching of Si play an important role in enhancing the HfO2/Si ...

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Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.

CERN Document Server

Volume sources is used for standard sources by radioactive measurement using Ge semiconductor detector of environmental sample, e.g. water, soil and etc. that require large volume. The commercial volume source used in measurement of the water sample is made of agar-agar, and that used in measurement of the soil sample is made of alumina powder. When the plastic receptacles of this two kinds of volume sources were damaged, the leakage contents cause contamination. Moreover, if hermetically sealing performance of volume source made of agar-agar fell, volume decrease due to an evaporation off moisture gives an error to radioactive measurement. Therefore, we developed the two type methods using unsaturated polyester resin, vinilester resin, their hardening agent and acrylicresin. The first type is due to dispersing the hydrochloric acid solution included the radioisotopes uniformly in each resin and hardening the resin. The second is due to dispersing the alumina ...

Energy Technology Data Exchange (ETDEWEB)

Most of the organic electronic devices are nowadays fabricated under poor vacuum conditions. In this regard, there is only little knowledge about the impact of contamination of the metal electrode on the charge injection barrier in this kind of electronic devices. In our study we have performed X-ray and ultra violet photoemission spectroscopy (XPS, UPS) on interfaces between the organic semiconductor -sexithiophene and sputter cleaned (ideal) metals as well as contaminated (realistic) metals. As metal substrates we have used silver, gold, palladium, and platinum. These metals provide us a wide range of metal work functions from 4.2 eV for silver up to 5.5 eV for platinum. For all interfaces of -sexithiophene and contaminated metals we have observed a reduction of the interface dipole and the hole injection barrier. The charge injection barrier in all four cases is almost independent of the underlying metal (within an error of 0.2 eV) and the interface dipole ...

Energy Technology Data Exchange (ETDEWEB)

The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N {sub D}) for the passive film is of the order of 10{sup 21} cm{sup -3} and decreases with increasing formation time and potential, indicating that defects decrease with increasing film thickness. Based on the information about the physical phenomena, an ...

Energy Technology Data Exchange (ETDEWEB)

What kind of hardware and software should be used to interface GPIB devices with the existing computer system. One idea was to use a commercially available Multibus card, BLC 8488 from National Semiconductor, whose on-board Z80 would manage the GPIB read/write functions and handshakes. With this card, one could make a hardware system which would consist of (1) CAMAC 080, (2) Multibus crate, (3) M. Shea's M68000, (4) M080, (5) BLC 8488 and (6) memory board. And the software considered for such a hardware package was GAS, which had been an established software package for communication between the ACNET computer system and smart CAMAC modules. However, a second idea was to put everything on a two-wide CAMAC module. The author pursued the second idea and came up with a two-wide CAMAC module called C488. The author describes the hardware - block diagrams, circuit blocks, front panel and hardware tests. He also refers to the software - system, modules and ...

Energy Technology Data Exchange (ETDEWEB)

We developed a new systematic calibration procedure which was applied to the prediction of the diffusivity, the segregation, and transient enhanced diffusion (TED) of an indium impurity. The TED of the indium impurity was studied using four different experimental conditions. Although indium is susceptible to TED, rapid thermal annealing (RTA) is effective in suppressing the TED effect and maintaining a steep retrograde profile. Like boron impurities, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients much less than 1 at the Si/SiO{sub 2} interface. In contrast to boron, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed procedure was validated by using secondary ion mass spectrometry (SIMS) data and by using the 0.13-{mu}m device characteristics, such as V{sub th} and I{sub dsat}, for which the differences between simulation and experiment less than 5 %.

International Nuclear Information System (INIS)

In this paper, an improved soft switched two cell interleaved boost AC/DC converter with high power factor is proposed and investigated. A new auxiliary circuit is designed and added to two cell interleaved boost converter to reduce the switching losses. The proposed auxiliary circuit is implemented using only one auxiliary switch and a minimum number of passive components without an important increase in the cost and complexity of the converter. The main advantage of this auxiliary circuit is that it not only provides zero-voltage-transition (ZVT) for the main switches but also provides soft switching for the auxiliary switch and diodes. Though all semiconductor devices operate under soft switching, they do not have any additional voltage and current stresses. The proposed converter operates successfully in soft switching operation mode for a wide range of input voltage level and the load. In addition, it has advantages such as fewer structure complications, lower ...

Energy Technology Data Exchange (ETDEWEB)

Three abiotic systems are described that catalyze the reductive dehalogenation of heavily halogenated environmental pollutants, including carbon tetrachloride, trichloroethene, and perchloroethene. These systems include (a) an electrolytic reactor in which the potential on the working electrode (cathode) is fixed by using a potentiostat, (b) a light-driven system consisting of a semiconductor and (covalently attached) macrocycle that can accept light transmitted via an optical fiber, and a light-driven, two-solvent (isopropanol/acetone) system that promotes dehalogenation reactions via an unknown mechanism. Each is capable of accelerating reductive dehalogenation reactions to very high rates under laboratory conditions. Typically, millimolar concentrations of aqueous-phase targets can be dehalogenated in minutes to hours. The description of each system includes the elements of reaction mechanism (to the extent known), typical kinetic data, and a discussion of the ...

International Nuclear Information System (INIS)

This paper presents a novel organization of switch capacitor charge pump circuits based on voltage doubler structures. Each voltage doubler takes a DC input and outputs a doubled DC voltage. By cascading voltage doublers the output voltage increases up to 2 times. A two-phase voltage doubler and a multiphase voltage doubler structures are discussed and design considerations are presented. A simulator working in the Q-V realm was used for simplified circuit level simulation. In order to evaluate the power delivered by a charge pump, a resistive load is attached to the output of the charge pump and an equivalent capacitance is evaluated. To avoid the short circuit during switching, a clock pair generator is used to achieve multi-phase non-overlapping clock pairs. This paper also identifies optimum loading conditions for different configurations of the charge pumps. The proposed charge-pump circuit is designed and simulated by SPICE with TSMC 0.35-#mu#m CMOS technology and operates with a ...

International Nuclear Information System (INIS)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

International Nuclear Information System (INIS)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B_2H_6 plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B_2H_6 plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor field-effect-transistor (MOSFET) device channel lengths for high-speed application requires the scaling down ...

Energy Technology Data Exchange (ETDEWEB)

The work in the past year has primarily involved four areas of magnetic thin films: amorphous rare earth-transition metal alloys, epitaxial CoPt{sub 3} and Ni-Pt alloy thin films, amorphous rare earth doped Si (a new class of dilute magnetic semiconductor with large negative magnetoresistance which the authors have discovered), and exchange-coupled antiferromagnetic insulators. In the amorphous alloys, they made a systematic study of the effects of local anisotropy, macroscopic (perpendicular) anisotropy, and exchange constant on the fundamental (and practical) properties of these magnetic alloys, as originally described in the grant proposal. The work on the epitaxial Co-Pt (and more recently Ni-Pt) alloys was originally undertaken as a comparison study to the amorphous alloys. Crystalline Co-Pt alloys have many striking similarities to the amorphous rare earth-transition metal alloys: perpendicular magnetic anisotropy, magneto-optic activity, and a {Tc} (for ...

Science.gov (United States)

Heterostructures based on AlGaInP alloy compounds are very attractive for visible semiconductor lasers, heterojunction bipolar transistors (HBTs), and high-electron-mobility transistors (HEMTs) lattice matched to GaAs substrates. Several wet etching solutions for AlGaP of different compositions have been studied. Al{sub 0.5}Ga{sub 0.5}P is found to etch in HF, H{sub 3}PO{sub 4}, hyphosphorous acid (HOPH{sub 2}:O), HCl, KOH, and 1% Br{sub 2}-methanol (MeOH). Etching of Al{sub 0.5}Ga{sub 0.5}P in HCl is reaction limited with an activation energy of {approximately}54.4 kJ/mol. At fixed conditions, the etch rates of Al{sub x}Ga{sub 1{minus}x}P vary exponentially with x in HF and HCl, while in 1% Br{sub 2}-MeOH and mixtures of HCl and HNO{sub 3} the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for AlGaP over InGaP or AlInP with high selectivity, while HCl is useful for the reverse case. The use of 1% Br{sub 2}-MeOH ...

Energy Technology Data Exchange (ETDEWEB)

Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 G{gamma}) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset (SEU) as the main pervasive ionising radiation threat to the reliability of implantable devices. A theoretical model which predicts the susceptibility of a RAM cell to ...

International Nuclear Information System (INIS)

The polycrystalline samples of Y_2_-_xHo_xO_3 (0.10#<=#x#<=#1.80) were synthesized by ceramic technology. The X-ray powder diffraction data were collected and the crystal structures were refined by the Rietveld method for the samples Y_2_-_xHo_xO_3 (x=0.00, 0.20, 0.40, 1.20, 1.80, 2.00). Holmium ions Ho"3"+ were randomly distributed over two cationic sites 8b and 24d in the space group Ia3 in all refined structures. Cation-anion-cation bonds important for superexchange interaction were determined. Magnetic susceptibility measurements were done by the Faraday method in the temperature range 290 to 620 K and a behaviour in accordance with the Curie-Weiss law was obtained. The molar Curie's constants linearly depend on concentration. The effective magnetic moments of Ho"3"+ ions were smaller than the free ion value. The Curie-Weiss paramagnetic temperatures indicated antiferromagnetic interaction. The gram ion susceptibilities confirmed the random distribution of Ho"3"+ ions over ...

Energy Technology Data Exchange (ETDEWEB)

Technology developments in semiconductor fabrication along with a rapid expansion of the market for portable devices, such as PDAs and mobile phones, make the energy consumption of embedded systems a major problem. Indeed the need to provide an increasing number of computational intensive applications and at the same time to maximize the battery life of portable devices can be seen as incompatible trends. System simulation is a flexible and convenient method for analyzinging and exploring the performance of a system or sub-system. At the same time, the increasing use of computational intensive applications strengthens the need to maximize the battery life of portable devices. As a consequence, the simulation of embedded systems for energy consumption estimation is becoming essential in order to study and explore the influence of system design choices on the system energy consumption. The original publications presented in the second part of this thesis propose ...

Energy Technology Data Exchange (ETDEWEB)

A major factor for the achievement of the desirable performance, efficiency and lifetime of flexible organic electronic devices is the optimization of the encapsulation layers that protect the device active layers by atmospheric gas molecule permeation. The active layers consisted of small molecule and/or polymer organic semiconductors as well as the organic conductors need to be encapsulated into a transparent medium that will provide the necessary protection and maintain their charge generation and transport characteristics. The encapsulation layers are generally consisted of inorganic thin films (silicon oxide-SiO{sub x} and aluminium oxide-AlO{sub x}) deposited onto the polymeric substrates, such as PolyEthylene Terephthalate (PET). In this work, in situ and real-time Spectroscopic Ellipsometry in the ultraviolet spectral region has been implemented in order to investigate the growth of inorganic SiO{sub x} and AlO{sub x} nano-layers onto PET flexible polymeric ...

Energy Technology Data Exchange (ETDEWEB)

Individual nanoscale building blocks exhibit a wide range of size-dependent properties, since their size can be tuned over known characteristic length scales of bulk materials. In the last several years, the possibility of combining different materials in the form of two and three component nanoparticles (NPs) has been extensively explored. Also multi-component materials can be obtained via self-assembly of NPs from their binary colloidal mixtures. These new nanocrystal solids may possess tunable collective properties that originate from interactions between size and composition controlled building blocks. Exchange coupling between neighboring NPs of magnetically soft and hard materials enhances the magnetic energy product of the nanocomposite material. Randomly mixed solids of small and large semiconducting CdSe NPs revealed enhancement of photoluminescence intensity of large semiconductor particles accompanied by quenching of photoluminescence of the small ...

International Nuclear Information System (INIS)

The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is reported from pure and doped GaP single crystals grown over 40 years ago and evaluated approximately every ...

International Nuclear Information System (INIS)

The purpose of this work was to investigate the optical properties of several high T/sub c/ compounds in the form of sputtered films. The measurements are used toward this end: optical absorptance (using a calorimetric technique near 4.2K), which yields (after Kramers-Kronig analysis) the complex dielectric function, and thermoreflectance (which measures the change in reflectance in the optical range when a 1 to 10_0K temperature wave is applied), performed at two ambient temperatures (80 and 300_0K), yielding the differential dielectric function. The sputtered films included Nb"3Ge, Nb"3Al, V"3Ga and Nb"3Ir. It is noted that Nb"3Ir is not a high T/sub c/ superconductor. The thermoreflectance on the bulk samples V"3Si, V"3Ge and single crystal Cr"3Si were not performed because the samples were not in the form of thin films. The thermomodulation studies are correlated with the absorptance measurements in comparison to band structure calculations. When thermomodulation studies are ...

Science.gov (United States)

The liquid-phase synthesis of metal oxide nanoparticles in organic solvents under exclusion of water is nowadays a well-established alternative to aqueous sol-gel chemistry. In this article, we highlight some of the advantages of these routes based on selected examples. The first part reviews some recent developments in the synthesis of ternary metal oxide nanoparticles by surfactant-free nonaqueous sol-gel routes, followed by the discussion of the morphology-controlled synthesis of lanthanum hydroxide nanoparticles, and the presentation of structural peculiarities of manganese oxide nanoparticles with an ordered Mn vacancy superstructure. These examples show that nonaqueous systems, on the one hand, allow the preparation of compositionally complex oxides, and, on the other hand, make use of the organic components (initially present or formed in situ) in the reaction mixture to tailor the morphology. Furthermore, obviously even the crystal structure can differ from the corresponding ...

Energy Technology Data Exchange (ETDEWEB)

We have observed resonant changes in the current-voltage characteristics of miniband semiconductor superlattices when the Bloch frequency is resonant with a terahertz field and its harmonics: the inverse Bloch oscillator effect. The resonant feature consists of a peak in the current which grows with increasing laser intensity accompanied by a decrease of the current at the low bias side. The peak position moves linearly with the laser frequency. When the intensity is increased further the first peak starts to decrease and a second peak at about twice the voltage of the first peak is observed due to a two photon resonance. At the highest intensities we observe up to a four photon resonance. A superlattice is expected to show negative differential conductance due to the strong nonparabolicity of the miniband. In this situation the carriers should undergo Bloch oscillations with a frequency {omega}{sub B} = eEd/h. Transient Bloch oscillations of photo excited carriers ...

Energy Technology Data Exchange (ETDEWEB)

Recently there has been growth, in interest in non-equilibrium interaction of half-period long optical pulses with matter. To date the optical pulses have been produced by chopping out a half-period long segment from a longer pulse using a semiconductor switch driven by a femtosecond laser. In this paper we present new methods for producing tunable ultra-short optical pulses as short as half an optical period using a free-electron laser driven by electron bunches with a duration a fraction of an optical period. Two different methods relying on the production of coherent spontaneous emission will be described. In the first method we show that when a train of ultra-short optical pulses as short as one half period. We present calculations which show that the small signal gain is unimportant in the early stages of radiation build up in the cavity when the startup process is dominated by coherent spontaneous emission. To support our proposed method we present ...

Energy Technology Data Exchange (ETDEWEB)

The use of the focused ion beam (FIB) systems has increased to a high level in recent years. The imaging, milling, and deposition capabilities of the FIB make it the ideal instrument for e.g., site-specific failure analysis, specimen preparation and nano-machining. Ion channelling contrast allows for selective imaging of polycrystalline and polyphase microstructures. In addition, the FIB and CrossBeam registered instruments are unique stand-alone analytical tools. Their vast capabilities have enabled numerous applications into the semiconductor and materials sciences applications. These integrated CrossBeam registered Tools enable the observation and direct control of the FIB operation in real time. In addition to the improved accuracy and resolution the electron beam adds analytical capabilities as STEM, EDS and EBSP to the instruments. To ensure a safe and reliable operation of the instrument, a dedicated vacuum system is needed. This type of instrument combines ...

International Nuclear Information System (INIS)

Full text: Semiconductor detectors coated with boron or lithium compounds have been studied for neutron detection for decades but, until recently, have been limited to thermal neutron detection efficiencies of less than 5%. We reported previously on development and simulation studies of perforated detectors whose perforations are filled with neutron-reactive material in order to produce higher detection efficiencies. Incorporation of bare and cadmium-backed detectors into battery-powered devices with low-power electronics enables us to produce compact personal neutron dosimeters that provide LED readout of counts, which can be related approximately to neutron dose. We report here on experimental studies with such compact devices; devices capable of direct readout in dose units are anticipated. The thermal and epithermal neutron flux densities from the tangential beam tube of the TRIGA Mark II reactor at Kansas State University were measured. Then, thermoluminescent ...

Energy Technology Data Exchange (ETDEWEB)