International Nuclear Information System (INIS)

20 nm thick permalloy elements, with dimensions of 500 x 500 nm"2 and 1000 x 200 nm"2, have been fabricated on 50 nm thick silicon nitride substrate by milling using a focussed ion beam (FIB) microscope. The dose of ion beam used for the milling was varied in order to achieve the best definition for the milled areas. The FIB milled elements were characterised physically by atomic force microscopy (AFM) and bright field transmission electron microscopy (TEM) and magnetically by Fresnel imaging on a TEM modified for magnetic imaging. The FIB milled elements were found to have a more irregular edge and lower magnetic fields for events such as vortex annihilation when compared to elements of the same dimensions fabricated by conventional electron beam microscopy (EBL).

Energy Technology Data Exchange (ETDEWEB)

The present paper explains the curve-fitting method developed as a method to estimate the geothermal equilibrium forming temperature. In the present method, that temperature is estimated by obtaining, by non-linear lest square, the model parameter to minimize the sum of remainders squared between the temperature actually measured after a lapse of certain time from the stoppage of mud water circulation and that calculated on the basis of Middleton model, mathematical model of temperature equilibrium well. In the Horner's plotting method currently in general use, temperature recovery data during a long period of about 120h are required for estimating the geothermal equilibrium forming temperature. However in the curve-fitting method, it is confirmed from the actual well data that the well recovery temperature is estimable from three logging data during 24h after the stoppage of mud water circulation within the largest error of 5%, and during 12h within 10%. 7 refs., 5 figs., 1 ...

International Nuclear Information System (INIS)

In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50 nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50 nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO_2 substrates with pre-defined contact pads. Bi nanowire widths ranging from 30 nm to 100 nm have been successfully fabricated by milling out unwanted areas using 30 KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30 nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50 nm bismuth nanowires, a drill-and-fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam process has been used to fabricate bismuth nanowire. The fabricated Bi nanowires were ...