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... defects doped materials germanium infrared radiation monocrystals neutron

International Nuclear Information System (INIS)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation ...

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We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.

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The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type ...

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Rare-earth oxides are doped into ZnO varistors as grain growth inhibitors for increasing the varistors' voltage gradients. However, their leakage currents become large and their nonlinear coefficients decrease at the same time. The reasonable explanation for such a phenomenon has not yet been available. In this paper, the temperature dependences of varistor samples' leakage currents are investigated, which reveal that the increased leakage currents of ZnO varistors with Y2O3 doping are mainly due to the bypass paths through the intergranular materials at grain corners.

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Silicon nitride hybrid ball bearings used in high temperature applications undergo mechanical and environmental degradation. To study the surface chemistry of silicon nitride, a CAChe{trademark} Worksystem* has been used to generate the clusters and corresponding transmission vibrational spectra of silicon nitride. In the present study, the effect of surface conditions on the surface chemistry and wear degradation of silicon nitride was evaluated. Infrared reflection spectroscopy (IRRS) used to determine molecular orientations shows a difference in reflectance spectra for fractured and as-received.

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The authors study the nonuniformity of a-Si:H films obtained by the method of vacuum condensation, with the help of x-ray small-angle scattering (SLS) and transmission electron microscopy. Films of hydrogenated amorphous silicon are greatest interest, because the electronic properties of this material can be controlled by doping. As a result of the compensation of the ruptured bonds, and possibly, effects of melting, the properties of such films are analogous to those of singlecrystalline silicon. XLS enables a quantitative determination of the prameters of the regions of low electron density (RLD) in such objects.

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This work is concentrated on growth, spectroscopy and laser performance of thulium-doped vanadate crystals. At the beginning the growth techniques are analyzed and then the matrix of vanadates crystal, its structure and physicochemical properties are explained together with the rare earth activators influence. Detailed spectroscopy of the thulium-doped vanadate crystals then follows. On the background of this theoretical analysis and state of the art of the subject the description of thulium vanadate lasers (especially Tm:YVO"4, Tm:GdVO"4, and Tm:LuVO"4) together with their generated output radiation characteristics are presented.

British Library Electronic Table of Contents (United Kingdom)

Direct visualization of rare earths in @a- and @b-SiAlON unit-cells is performed through Z-contrast imaging technique in an aberration-corrected scanning transmission electron microscope. The preferential occupation of Yb and Ce atoms in different interstitial locations of @b-SiAlON lattice is demonstrated, yielding higher solubility for Yb than Ce. The triangular-like host sites in @a-SiAlON unit cell accommodate more Ce atoms than hexagonal sites in @b-SiAlON. We think that our results will be applicable as guidelines for many kinds of rare-earth-doped materials.

International Nuclear Information System (INIS)

In this work, we investigate the interstitial injection into the silicon lattice due to high-dose, low-energy arsenic implantation. The approach consists in monitoring the diffusion of the arsenic profile as well as of the boron profile in buried #delta#-doped layers, when amounts of the as-implanted arsenic profile are removed by low-temperature wet silicon etching. The experimental results indicate that the contribution of the implantation damage to the transient enhanced diffusion of boron, and thus the interstitial injection, is not the main one. On the contrary, interstitial generation due to arsenic clustering seems to be more important for the present conditions.

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Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. The authors present new data which address a number of questions raised by the present models. They show that in the experiments bulk trapping of interstitials is significant only for low implant fluences ({approximately}10{sup 12} cm{sup {minus}2}). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the {delta}-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. They suggest that some part of the observed TED response ...

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Motivated by the discovery of superconductivity in alkali and alkaline earth fullerides, this program was undertaken both to understand the nature of and expand the range of materials demonstrating superconductivity. The first approach involved attempts to modify the fullerene cage by incorporating heteroatoms in the structure and the preparation and photophysical properties of nitrogen and sulfur doped fullerenes were studied in detail. The second approach involved examining the stoichiometry and effect of preparative conditions on the behavior of alkali, alkaline earth, lanthanide and mixed ion fullerides. In particular, the authors have elaborated on a technique for making such salts using liquid ammonia or aliphatic amines as solvents. Thirdly, modeling studies were undertaken to predict the properties of heterohedral fullerines and metal - C60 complexes, and theoretical guidelines were developed for understanding the ...

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A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

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X-ray irradiation-induced paramagnetic radicals in rare earth (Ln) ion-doped glaserite and Ln ion-doped langbeinite were studied by means of ESR technique, aiming at developing the highly sensitive sensor for an ESR dosimetry. The samples were prepared by two kinds of procedures as follows. In one process, the glaserite (K{sub 3}Na(SO{sub 4}){sub 2}) matrix or the langbeinite (K{sub 2}Mg{sub 2}(SO{sub 4}){sub 3}) matrix were synthesized by heating the mixture of K{sub 2}SO{sub 4} and Na{sub 2}SO{sub 4} or the mixture of K{sub 2}SO{sub 4} and MgSO{sub 4} at 1023 K for 1 hour in He flow. The matrices obtained were mixed well with a fixed amount of Ln{sub 2}(SO{sub 4}){sub 3} (Ln=La, Eu, Gd, Lu) powder and heated at 1023 K for 1 hour in He flow. In the other process, the homogeneous mixture of a fixed amount of K{sub 2}SO{sub 4}, Na{sub 2}SO{sub 4} and Ln{sub 2}(SO{sub 4}){sub 3} powders or a fixed amount of K{sub 2}SO{sub 4}, ...

International Nuclear Information System (INIS)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10"1"7 to 3 x 10"1"9 cm"-"3. (Author).

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This letter describes a new simple fabrication process, developed recently for blue response'' improvement in low-cost polycrystalline silicon solar cells. A selective emitter is created by heavily doping the emitter, followed by a wet etching-back of the cell area between the fingers. An improvement up to 17 mV in {ital V}{sub oc}, 1.5 mA/cm{sup 2} in {ital J}{sub sc}, and 1% (absolute value) in {eta} is obtained. Effective phosphorus gettering, self-alignment, and application in a low-cost full screenprinting technology are the main advantages of the proposed process.

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Abstract First results showing the viability of combining laser chemical processing (LCP) and aerosol jet printing (AJP) technologies to produce a high-efficiency front side for silicon solar cells are presented. LCP simultaneously opens the anti-reflection coating (ARC) and highly dopes the underlying silicon to create a selective emitter, while AJP is the first in a two-step fine-line contact formation procedure. The electrical properties as well as the morphology of the resulting structures are presented. Performance similar to that achieved with evaporated TiPdAg metallization is demonstrated. Copyright 2010 John Wiley & Sons, Ltd.

Science.gov (United States)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

British Library Electronic Table of Contents (United Kingdom)

By applying lock-in thermography imaging, light-beam-induced current imaging, electron-beam-induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which grow preferentially in grain boundaries and cross the whole cell. These filaments are highly n-type doped, like the emitter layer on the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell.

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Absorption and emission measurements at liquid-helium temperature, liquid-nitrogen temperature and room temperature have been performed on tetragonal scheelite-type rare earth sodium double molybdates Na[sub 5]RE(MoO[sub 4])[sub 4] and on RE-doped Na[sub 5]Gd(MoO[sub 4])[sub 4] samples. The rare earth occupies one single crystallographic position with S[sub 4] as point symmetry. The spectra were analysed according to the crystal field theory. From the experimental data, nearly complete energy level schemes of the Pr[sup 3+] and Nd[sup 3+], on the 4f [sup 2] and 4f [sup 3] configurations were derived. Very good correlation was obtained between the experimental and simulated energy level schemes, first for the approximated D[sub 2d] and then for the true S[sub 4] symmetries. The crystal field parameters vary smoothly with the atomic number of the rare earth, when compared with those determined previously ...

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The spectroscopic properties of Pr{sup 3+} doping two lanthanum chlorotungstate hosts: the orthorhombic LaWO4Cl (1-1) and the hexagonal La3WO4Cl6 (3-1), as well as those of PrWO4Cl and Pr3wO613 have been investigated. The simulations of the energy level schemes are carried out within the crystal field theory frame. Each simulation involves 7 free ion parameters and 14 non-zero crystal field parameters (cfps), corresponding to the C{sub s} point symmetry of the site occupied by the rare earth, in both structures.

International Nuclear Information System (INIS)

Silicon nitride-based ceramics behavior is strongly influenced by microstructural parameters, which, in turn are determined by chosen densification method. Highly covalent Si-N bond hind are the silicon nitride densification. Therefore, metal oxides are used in order to get high density. However, such oxides must be carefully selected, because they affect the general macroscopic properties of sintered bodies. In the present work, the viability of rare earth concentrate use to produce #beta#--Si_6_-_xAl_xO_xN_8_-_x and its effect on mechanical properties of the sintering ceramics are studied. Additive composition, heating rate, soaking time and sintering temperature were took as variables. Hardness, fracture toughness, Young's modulus and flexural strength were investigated. Lattice parameter compositional dependence and secondary phases crystallized after past-sintering heat treatment were also determined. The results show ...

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Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

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Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

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Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)

International Nuclear Information System (INIS)

The dependence of the carrier concentrations, of the resistivity and of the Hall coefficient of irradiated silicon on the neutron fluences has been investigated, starting from the supposition that the main phenomena induced by irradiation in the semiconductor bulk are shallow-donor removal and deep-centres creation. The free parameters of the model are initial doping of the starting material, the permitted energy level values of the radiation-induced centres in the semiconductor band gap and their introduction rates. The influence of each parameter on the calculated dependences is studied in detail, for three cases: one deep acceptor-like centre, two deep acceptors and one deep acceptor plus one deep donor-like centre. each of the three cases is discussed in correspondence with different experimental results.

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The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

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We have developed a new type personal dosemeter by using a B-10 doped silicon p-n junction detector with a polyethylene radiator and a polyethylene moderator. The purpose of this study was to develop a real time neutron dosemeter with a nearly flat response in the energy range from thermal to 15 MeV and low angular dependence to the incident neutron direction. The neutron response of the dosemeter was obtained with the Monte Carlo calculation and the monoenergetic neutron experiment in a free air field and also under a condition attached on a phantom.

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We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce the excess interstitials generated by a 40 keV Si implant during thermal annealing when these two implants are superimposed in silicon. It is shown that this previously observed reduction is dominated by vacancy annihilation and not by gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on a silicon-on-insulator (SOI) substrate. Implanting MeV and keV Si ions into the B DSL/SOI structure eliminated the B transient enhanced diffusion normally associated with the keV implant. The buried SiO_2 layer in the SOI substrate isolates the deep interstitials-type extended defects of the MeV implant, thereby eliminating the possibility that these defects getter the interstitial excess induced by the keV Si implant. copyright 1999 American Institute of Physics.

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In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.

British Library Electronic Table of Contents (United Kingdom)

Abstract Lithium-indium oxide is one of the candidate materials as solid-state scintillators for solar neutrinos due to an inverse --decay of 115In to 115Sn. On the other hand, when doped with rare-earth ions such as Eu3+ or Sm3+, it becomes a promising phosphor material. In this report we present a simple solid-state procedure for preparation of LiInO2:Eu3+ powders. X-ray diffraction confirmed prod-uct in tetragonal structural form (space group: I41/amd) and no impurity phases were detected. Then, high resolution photoluminescence emission measurements were performed at room and low temperatures to find 5D0 - 7FJ. Emission kinetics from 5D0 level exhibited pure single exponential behavior with lifetime of about 1.5 ms. Maximum energy splitting of 7F1 manifold is recorded as a function of ...

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Thermophotovoltaic (TPV) converters were developed and tested at the heat source operating temperature of 1,700 K. Rare-earth-doped yttrium aluminum garnet (YAG) and lutetium yttrium aluminum garnet (Lu, YAG) selective emitters, as well as a blackbody emitter, were coupled to InGaAs/InP photovoltaic (PV) cells and bandpass/infrared (IR) reflector filters. YAG-based selective emitters were adopted with Ho, Tm, and Er. PV cells had bandgaps of 0.51, 0.57, and 0.69 eV. Converter energy conversion efficiencies approaching 30%, as well as electrical output power densities near 2 W/cm{sup 2} were demonstrated. The overall performance of the filtered blackbody-based converter was found to be superior to the selective emitter YAG-based converters. The details of the measurements performed on the above converters and their individual components are presented.

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The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, ...

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In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C can be used. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4 x 10{sup 20}At/cm{sup 3} have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution X-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. In this work, we propose a relaxation mechanism based on a kick-out reaction of substitutional Carbon which is accelerated by Phosphorus content through transient enhanced diffusion. We simulate the time ...

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A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is ...

Science.gov (United States)

The Gateway to Astronaut Photography of Earth hosts the best and most complete online collection of astronaut photographs of the Earth.

Science.gov (United States)

The Gateway to Astronaut Photography of Earth hosts the best and most complete online collection of astronaut photographs of the Earth.

Energy Technology Data Exchange (ETDEWEB)

We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.

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The main driver in ultra-shallow formation for the 65 nm technology node and beyond is to find solutions that both reduce boron transient enhanced diffusion and can be integrated in the CMOS process flow. To this end, many studies have recently focused on using co-doping techniques with fluorine and most recently with carbon. In most cases, one or both of these is co-implanted with a dopant specie in pre-amorphized silicon. In this work, we show a comparative study of fluorine or carbon co-implanted with low-energy boron to form source and drain extension junctions for PMOS devices. We will show that by a systematic optimization of germanium, boron, fluorine or carbon energies and doses, spike annealing technology can be extended to the 65 nm node. These results will be used to discuss how the different formed junctions offer potential solutions for either low-power or high-performance PMOS device fabrication.

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A preliminary design effort directed toward a low concentration ratio photovoltaic array system capable of delivering multihundred kilowatts (300 kW to 1000 kW range) in low earth orbit is described. The array system consists of two or more array modules each capable of delivering between 113 kW to 175 kW using silicon solar cells or gallium arsenide solar cells, respectively. The array module deployed area is 1320 square meters and consists of 4356 pyramidal concentrator elements. The module, when stowed in the Space Shuttle's payload bay, has a stowage volume of a cube with 3.24 meters on a side. The concentrator elements are sized for a geometric concentration ratio (GCR) of six with an aperture area of .25 sq. m. The structural analysis and design trades leading to the baseline design are discussed. It describes the configuration, as well as optical, thermal and electrical performance analyses that support the design and overall ...

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Some of the results of property measurements of CeO{sub 2} and its solid solutions were reviewed. The deviation from stoichiometry of undoped and doped CeO{sub 2} was presented in several figures, which suggested that CeO{sub 2} fired at high temperatures in air might be nonstoichiometric in some degree. At low temperatures, the deviation from stoichiometry in doped CeO{sub 2} is higher than undoped CeO{sub 2}. As another interesting property, CeO{sub 2} shows high solubility to trivalent cations such as rare earth elements. A possible reason behind this high solubility was presented. The nonstoichiometric defect in undoped CeO{sub 2} and the trivalent cation in solid solution with CeO{sub 2} have to be compensated by other defects. The possible defect structures in this solid solution were reviewed and the most probable structure was chosen based on density measurement and impurity dependence of oxygen diffusion ...

International Nuclear Information System (INIS)

Researchers at the Laboratory of Nuclear Microanalysis in Besancon (France) are developing and improving radon measurements in order to detect and analyse, more precisely radon emanation anomalies in both fields of Earth Sciences and Radioprotection. In order to characterize radon emanation, two complementary techniques are developed; continuous measurement through a portable proportional counter and passive measurements by nuclear track detectors for both fieldwork and laboratory analysis. A mathematical model is being devised to interpret the nuclear track detector response. This model is performed according to the device characteristics: type of detectors, shape and size of cells and whether a membrane is used or not. In addition to the theoritical study, experimental radon concentration measurements will be reported. (author).

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The work in the past year has primarily involved four areas of magnetic thin films: amorphous rare earth-transition metal alloys, epitaxial CoPt{sub 3} and Ni-Pt alloy thin films, amorphous rare earth doped Si (a new class of dilute magnetic semiconductor with large negative magnetoresistance which the authors have discovered), and exchange-coupled antiferromagnetic insulators. In the amorphous alloys, they made a systematic study of the effects of local anisotropy, macroscopic (perpendicular) anisotropy, and exchange constant on the fundamental (and practical) properties of these magnetic alloys, as originally described in the grant proposal. The work on the epitaxial Co-Pt (and more recently Ni-Pt) alloys was originally undertaken as a comparison study to the amorphous alloys. Crystalline Co-Pt alloys have many striking similarities to the amorphous rare earth-transition metal alloys: perpendicular ...

International Nuclear Information System (INIS)

The crystal structure of borophosphates ABPO_5 (A = alkaline earth or Pb) was resolved on a polycrystalline sample using the Rietveld method. The x-ray diffraction patterns data show that ABPO_5 crystallize in a centrosymmetric space group P3_121 and their structure is related to the borogermanates REBGeO_5 with a stillwellite-type structure. Pr"3"+ ion was used as a local structural probe to corroborate the structural resolution results. Absorption and fluorescence spectra of A_1_-_xPr_xBP_1_-_xGe_xO_5 (A alkaline earth or Pb; x = 0.05) have been investigated at different temperatures. At 9 K the 3"H_4#->#"3P_0 transition of trivalent praseodymium ion (4f"2 configuration) is observed as a single line. This indicates a unique crystallographic site for the rare earth ion in these compounds replacing the divalent cation. Energy level schemes were deduced from the low-temperature spectroscopic measurements. Comparing the ...

International Nuclear Information System (INIS)

The nine title compounds were prepared from the elements by arc-melting and subsequent heat treatment in resistance and high-frequency furnaces. The crystal structure of these isotypic compounds was determined for YPdSi from single-crystal X-ray diffractometer data: Pmmn, a = 430.8(1) pm, b = 1391.2(1) pm, c = 743.1(1) pm, Z = 8, R = 0.024 for 417 structure factors and 40 variable parameters. The crystal structures of the isotypic compounds GdPdSi and ErPdSi were also refined from single-crystal data. The structure is of a new type. It consists of condensed, six-membered rings of alternating palladium and silicon atoms with Pd-Si bond distances varying between 249.6 and 258.8 pm. These two-dimensionally infinite nets are connected to each other via weak Pd-Si and Si-Si bonds with bond distances of 276.3 and 259.5 pm. The rare earth atoms are situated above and below the six-membered palladium-silicon rings in a manner as it ...

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A comprehensive understanding of dopant activation mechanisms in crystalline Si is required in order to form shallow junctions. In this paper, we will review several experimental assessments on boron clustering and novel methods to form shallow junctions. Boron marker-layer structures have been used to investigate the fundamental aspects of formation and ripening boron-interstitial clusters (BICs) and their influence on the associated transient enhanced diffusion (TED). The samples were damaged by Si implants at different doses in the sub-amorphizing range and annealed at high temperatures. We found that BICs act as a sink for interstitials at supersaturations values S(t)>10{sup 4}. This implies that silicon self-interstitial defects are the primary source of interstitials driving TED, and that BICs act as a secondary 'buffer' for the interstitial supersaturation. These clusters are less sensitive to the ripening process than pure ...

International Nuclear Information System (INIS)

The Yb"3"+-doped non-linear rare-earth calcium oxoborate crystals GdCa_4O (BO_3)_3 (GdCOB) and YCa_4O(BO_3)_3 (YCOB) were investigated by low-temperature absorption and selective excitation spectroscopy. The selective excitation and emission spectra revealed the spectral features of the main Yb"3"+ centre and the principal minority one in both crystals. The energy level schemes for these centres in both hosts, as well as structural assignments, were proposed. It was established that the minority centre, which represents about 10% of the total intensity and was assigned to Yb"3"+ in a Ca"2"+ site, is not a trap but an energy donor for the main centre. Common features of and differences between the vibronic structure of the two centres in GdCOB and YCOB are discussed. The existence of additional features in YCOB:Yb spectra is pointed out. (author)

British Library Electronic Table of Contents (United Kingdom)

This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl45H2O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, `in- situ doping' resulted i...

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Holmium doped barium based hexaferrites BaFe{sub 12-2x}Ho{sub 2x}O{sub 19} with (x = 0.0-1.0) were synthesized by solid state reaction method. Structural and magnetic characterization of these ferrites provide significant information about their reactive physical properties. X-ray analysis reveals that in all samples M-type structure exist with few secondary phases. Scanning electron microscope revealed the grain size of the specimen. The results show that grain size decreases with the substitution degree of Holmium. Thus rare earth element Holmium Ho{sup 3+} acts as a grain growth inhibitor. The magnetic hysteresis loops show the variation in the values of magnetic parameters like saturation magnetization (M{sub s}), remanent magnetization (M{sub r}) and coercivity (H{sub c}) were observed by changing Ho{sup 3+} content in BaFe{sub 12-2x}Ho{sub 2x}O{sub 19} ferrites. Coercivity showed a maximum value of 2230 Oe for (x = 0.4) and then ...

International Nuclear Information System (INIS)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of #approx#3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from #left brace#311#right brace# defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of ...

Energy Technology Data Exchange (ETDEWEB)

A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due to the second mechanism), can be explained. Numerical ...

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The optically stimulated luminescence (OSL) results a highly appropriate dosimetric technique for readings of absorbed radiation 'in alive' and 'in situ', as well as in real time. The CVD diamond on the other hand presents excellent qualities like radiation reader thanks to its reproducibility, radiation resistance, biocompatibility and non toxicity. The present work studies the answer of two diamond films pure and polluted with nitrogen (750 ppm) grown by the Chemical Vapor Deposition method (CVD) on silicon substrate (001) irradiated with beta (Sr-90) in the 0.833-100 Gy interval. The optical stimulation was carried out by 40 seconds with infrared laser (830 nm, 0.36 W/cm{sup 2}) and the filter BG-39 (300-600 nm) coupled the PM. The intensity and the decay of the hyperbolic type of the LOE curves were similar in both samples, for the non doped diamond were observed trapping states in 200-380 C being ...

International Nuclear Information System (INIS)

SiAlONs are ceramics with high potential as biomaterials due to their chemical stability, associated with suitable mechanical properties, such as high fracture toughness and fracture resistance. The objective of this work was to investigate the mechanical properties and the cytotoxicity of these ceramic materials. Three different compositions were prepared, using silicon nitride, aluminum nitride and a rare earth oxide mixture as starting powders, yielding Si_3N_4-SiAlON composites or pure SiAlON ceramics, after hot-pressing at 1750 deg. C, for 30 min. The sintered samples were characterized by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). Furthermore, hardness and fracture toughness were determined using the Vicker's indentation method. The biological compatibility was evaluated by in vitro cytotoxicity tests. Ceramic with elevated hardness, ranging between 17 and 21 GPa, and high fracture toughness of 5 to 6 MPa ...

Science.gov (United States)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

Science.gov (United States)

The title compounds were prepared by arc-melting of the elemental components. Whereas NdPdSi and SmPdSi are already present after the arc-melting, alpha-GdPdSi and alpha-TbPdSi are formed only during the annealing at 800 degC. The four compounds crystallize with the recently reported alpha-YbAuGe type structure, which was refined for alpha-GdPdSi: Pnma, a=2108.0(4) pm, b=433.9(1) pm, c=745.6(1) pm, Z=12, R=0.026 for 1447 structure factors and 62 variable parameters. The lanthanoid atoms are situated between two-dimensionally infinite nets of condensed, puckered hexagons formed by alternating palladium and silicon atoms, with Pd-Si distances varying between 251 and 262 pm. In the third dimension these nets are linked via weak Pd-Pd (300 pm), Pd-Si (283 pm), and Si-Si bonds (261 pm). The refinements of the occupancy parameters suggested that ca. 2% of the palladium sites are occupied by silicon atoms and vice versa. The structural relationships ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

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Science.gov (United States)

Counting characteristics of X-ray detectors fabricated from indium-doped, gallium-doped, and chlorine-doped CdTe have been investigated. The detectors fabricated from indium-doped and gallium-doped crystals showed radiation-induced polarization, namely, a progressive decrease of count rate with an increase of photon fluence in the high-photon-fluence region, while the detectors fabricated from chlorine-doped crystals did not. Results from current-voltage characteristics of the detectors indicated that the different counting characteristics of these detectors originated from the difference in internal electric fields in each detector.

International Nuclear Information System (INIS)

The objectives of this research were to investigate the possibility of controlling the #alpha#'/#beta#' phase ratio and morphology in Sialon ceramics. These objectives have been sought by the control of the starting composition, and by post sintering heat treatment. The main emphasis has been on the production of a series of #alpha#' and (#alpha#'+#beta#') Sialon ceramics with a minimum amount of the glass phase by the pressureless sintering technique and using ytterbium (Yb) as an #alpha#' stabilising element. The Yb additions were made via the oxide or the alumino- silicate presynthesised glass; the latter was found to improve the density. The XRD analysis of the as sintered materials revealed #alpha#' to be the dominant phase with minor contributions from #beta#' sialon and/ or 12H A1N polytype. Additions of SiO_2 or #beta#-Si_3N_4 were made to various materials to assess potential mechanisms for obtaining control over the microstructural development of #alpha#'/#beta#' sialon ...

Science.gov (United States)

Feb 25, 2008 ... In the two Landsat scenes shown above, the pattern of deforestation can be clearly discerned. Deep green in these images shows lush ...

Science.gov (United States)

Jul 26, 2011 ... The Gateway to Astronaut Photography of Earth hosts the best and most complete online collection of astronaut photographs of the Earth.

Energy Technology Data Exchange (ETDEWEB)

Flux-grown ScPO{sub 4} single crystals exhibit a number of luminescence bands in their x-ray-excited luminescence spectra - including sharp lines arising from rare-earth elements plus a number of broad bands at 5.6 cV, 4.4 eV, and 3 eV. The band at 5.6 eV was attributed to a self-trapped exciton (STE) [l], and it could be excited at 7 eV and higher energies. This luminescence is strongly polarized (P = 70 %) along the optical axes of the crystal and exhibits a kinetic decay time constant that varies from several ns at room temperature to {approximately}10 {micro}s at 60 K and up to {approximately}1 ms at 10 K. It is assumed that the STE is localized on the SC ions. The band at 3 eV can be excited in the range of the ScPO{sub 4} crystal transparency (decay time = 3 to 4 {micro}s.) This band is attributed to a lead impurity that creates different luminescence centers. At high temperatures, the band at 4.4 eV is dominant in the x-ray-excited TSL and afterglow spectra. ...

British Library Electronic Table of Contents (United Kingdom)

Silicones have many desirable properties and as a result are incorporated into a wide range of products. However, they present unique problems that result from their propensity to outgas resulting in residue formation at unexpected places. Hence, the silicone conundrum?when to use these materials and when to beware of potential pitfalls. In this article, an outgassing mechanism unique to ?low outgassing? silicones is discussed. Examples are given where this has led to failures and remediation steps are highlighted.

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

International Nuclear Information System (INIS)

Transient enhanced diffusion (TED) from implantation of 5keVB_1_0H_1_4 and 0.5 keV B ions has been quantified and compared for nominal boron doses of 10"1"4 and 10"1"5cm"-"2. Boron diffusivity during annealing was extracted from secondary ion mass spectroscopy depth profiles of diffused marker layers in boron doping-superlattices and the actual implanted B dose was independently measured by nuclear reaction analysis. Comparable enhancements were observed from both ions. Transmission electron microscopy analysis revealed that both boron- and decaborane-implanted samples were amorphized at a nominal 10"1"5cm"-"2B dose. A comparison with data from low energy Si implants revealed a similar dependence of diffusivity enhancement on implant dose. These findings are consistent with the understanding that TED is caused by the interstitial supersaturation resulting from a number of excess interstitials approximately equal to the number of implanted atoms which can become ...

Energy Technology Data Exchange (ETDEWEB)

The objective of the project was to develop an infiltration material based on SiC that should have improved corrosion resistance and should permit higher operating temperatures. From a variety of tested doping agents, zirconium silicide and molybdenum proved to be the most appropriate agents. The respective infiltration materials permit a combination of advantages of the SSiC with those of the SiSiC. Silicide SiC, analogous to the SiSiC, is almost nonshrinking, and above all is more corrosion-resistant than SiSiC in the alkaline regime, due to the replacement of free silicon by silicide phases. The operating temperature of the molybdenum-base variant is 1600 C. (orig./CB) [Deutsch] Ziel des Vorhabens war die Entwicklung eines Infiltrationswerkstoffes auf SiC-Basis mit verbesserter Korrosionsbestaendigkeit und hoeherer Einsatztemperatur. Aus einer Vielzahl von getesteten Dotierungsmoeglichkeiten kristallisierten sich Zirkondisilicid und ...

Energy Technology Data Exchange (ETDEWEB)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5{times}10{sup 12} to 1{times}10{sup 14}/cm{sup 2} evolves into a distribution of {l_brace}311{r_brace} interstitial agglomerates during the initial annealing stages at 670{endash}815{degree}C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of {l_brace}311{r_brace} defects during ...

International Nuclear Information System (INIS)

The processes which are currently studied in the fabrication of B-doped ultra shallow junctions (USJ) usually involve a preamorphization step to reduce B channelling effect during implantation and to improve B electrical activation. At this stage a high amount of Si interstitial atoms (Is), which dramatically increases the B diffusivity, is introduced. The introduction of voids in Si is a promising tool to control B transient enhanced diffusion (TED), because of their ability to capture Is. In this work the efficiency of a cavity band to reduce B TED is checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He is implanted either at 10 keV or at 50 keV with a fluence of 5 x 10"1"6 cm"-"2. Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing (RTA)) are applied in order to have a better control of the technological process to focus on the ...

International Nuclear Information System (INIS)

There is significant interest in using computed tomography (CT) for in vivo imaging applications in mouse models of disease. Most commercially available mouse x-ray CT scanners utilize a charge-coupled device (CCD) detector coupled via fibre optic taper to a phosphor screen. However, there has been little research to determine if this is the optimum detector for the specific task of in vivo mouse imaging. To investigate this issue, we have evaluated four detectors, including an amorphous selenium (a-Se) detector, an amorphous silicon (a-Si) detector with a gadolinium oxysulphide (GOS) screen, a CCD with a 3:1 fibre taper and a GOS screen, and a CCD with a 2:1 fibre taper and both GOS and thallium-doped caesium iodide (CsI:Tl) screens. The detectors were evaluated by measuring the modulation transfer function (MTF), noise power spectrum (NPS), detective quantum efficiency (DQE), stability over multiple exposures, and noise in reconstructed CT ...

Science.gov (United States)

Description of how global warming could be disastrous for much of the earth's population....

ScienceCinema

...global warming situation is more than evaporation around ...background red ? which was the global warming the ...

Energy Technology Data Exchange (ETDEWEB)

Fe-sheathed MgB{sub 2} tapes with cheap stearic acid, Mg stearate and Zn stearate doping were prepared through the in situ powder-in-tube method. It is found that J{sub c}, H{sub irr} and H{sub c2} were significantly enhanced by doping. Compared to the pure tapes, J{sub c} for all the doped samples was improved by more than an order of magnitude in a high-field regime. At 4.2 K, the transport J{sub c} reached 2.02 x 10{sup 4} A cm{sup -2} at 10 T for the Zn stearate doped tapes and 3.72 x 10{sup 3} A cm{sup -2} at 14 T for the stearic acid doped samples, respectively. Moreover, at 20 K, H{sub irr} for the Zn stearate doped tape achieved 10 T, which is comparable to that of the commercial NbTi at 4.2 K. The improvement of J{sub c}-H properties in doped samples can be attributed to the increase of H{sub c2} resulting from the incorporation of ...

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A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

CERN Document Server

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

CERN Document Server

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

In this work, we perform spectroscopic studies to characterize the energy transfer processes occurring in rare-earth doped lithium fluoride systems, aiming the optimization of the population inversion of these media. Yb{sup 3+} ion was used in order to probe the electron-phonon coupling in LiYF{sub 4}, LiGdF{sub 4} and LiLuF{sub 4} matrices. In these systems it was obtained the average phononenergy, the vibronic transition probability and Huang-Rhys coupling constant. These parameters are dependent on the crystal host and the LiLuF{sub 4} system presents excluded correlation effects, an electronic repulsion that weakens the vibronic coupling. The Tm:Ho:LiYF{sub 4} system was studied under diode laser pumping at 796 nm, aiming the 2 {mu}m emission optimization. The ideal conditions of concentration and laser power were determined favouring the latter emission. Upconversion processes of two photons were identified besides the energy transfer ...

International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

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Not Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

The resonance reaction /sup 11/B(p,/alpha/)/sup 8/Be was used to determine the boron profiles in the surface of: (1) boron implanted silicon; (2) boron diffused silicon; and (3) boron containing films deposited on silicon wafers. The boron distribution in the various samples was found to be stable under the bombardment of the proton beam. The convolution process used to obtain yield curves from the depth distribution, and the program used for this purpose are described.

Science.gov (United States)

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

Energy Technology Data Exchange (ETDEWEB)

Vanadium doped manganese bi-oxide has been obtained from a solution containing both cations. The X-ray diffraction of this material indicates a rutile-type phase but the enlargement of some lines supports the existence of several lattice defects. Also the particle size of the doped material is significantly smaller than the one of the non-doped material obtained in the same conditions. The presence of pentavalent vanadium inside the lattice leads to a small amount of trivalent manganese. Electron microscopy shows the existence of defects which have a tendency of becoming well-ordered and to stabilize a sur-structure. At ambient temperature, the electrochemical behaviour of doped manganese bi-oxide is greatly improved when compared to the non-doped phase. This behaviour is due to the presence of numerous lattice defects and to the smaller size of crystallites. In polymer batteries, ...

Science.gov (United States)

Al Fleig, PITA Analytic Sciences. 7th Earth Science Data Systems Working Group Meeting ..... The Reuse Industry in Brazil, CESAR, and the Reuse in Software ...

British Library Electronic Table of Contents (United Kingdom)

The estimation of numerical values of the mean distance of closest approach of ions, a, of alkaline-earth metal ion salts in aqueous solutions, determined from activity coefficients, as well as from different theoretical approaches, is presented and discussed.

Science.gov (United States)

This frequently-asked-questions feature provides answers about earthquakes, faults, plate tectonics, and earth structure. Maps and diagrams are provided with some answers, and links to additional information and to related topics are included.

UK PubMed Central (United Kingdom)

We calculate the expected fluxes of cosmic ray nuclei with charge 5 ≤ Z ≤ 28 at various depths in the earth's atmosphere, taking into account the initial charge distribution,...Full Text Available

International Nuclear Information System (INIS)

... angular momentum cranking model even-even nuclei gadolinium 156 governor

Energy Technology Data Exchange (ETDEWEB)

This paper presents an analysis of the performance of a selective emitter using small particles of rare earth compounds stable at high temperatures in a low emittance inert gas stream. An expression for the spectral emissive power excluding radiation scattering was derived to include the radiation in the emission band, produced by electronic transitions of the rare earth ion, and the continuum radiation outside the emission band produced by the rare earth host. Preliminary results suggest that a selective emitter based on suspended rare earth oxide particles will have high efficiency and merits further experimental investigation. {copyright} {ital 1996 American Institute of Physics.}

International Nuclear Information System (INIS)

In this thesis the results are described of an investigation into the radiationless transfer of electronic excitation energies in various Eu"3"+ and Tb"3"+ compounds, which show structural peculiarities in the rare-earth sublattice. These peculiarities are an one-dimensional sublattice as well as two different crystallographic locations for the rare-earth ion. 154 refs.; 43 figs.; 12 tabs.

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...

International Nuclear Information System (INIS)

The extraction of rare earth elements, yttrium and aluminium from red mud resulting from alumina production with the ion-exchange resin KU-2-8n was studied. Experimental results are presented. The technology of hydrometallurgical processing of pulps obtained by sorption extraction of scandium from red mud is developed. It is shown that in the process of precipitation from sulfate sulfuric acid desorbate it became possible to obtain a high degree of rare earths deposition. The use of sodium hydroxide makes it possible to obtain a maximum deposition of rare earths and aluminium - 99.9 %. Aluminium leaching from crude composite concentrate gives a possibility to get concentrates which 15 - 20 times richer in yttrium and rare earths

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

Energy Technology Data Exchange (ETDEWEB)

Surface doping of conjugated polymers is realized by depositing a thin layer of graphene oxide (GO) on top of the polymers. The high proton density and the unique 2D structure of GO facilitate the protonic surface doping of conjugated polymers to achieve high conductivities. This finding represents a new strategy for improving charge transport across the metal/conjugated polymer interface to achieve much improved performance in organic solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

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Electron paramagnetic resonance was used to investigate surface-coated magnetite-based magnetic fluids doped with TEMPOL. Two magnetic fluid samples, having magnetite nanoparticles with average diameter of 94 A and coated with different coating layers (lauric acid plus ethoxylated polyalcohol in one case and oleoylsarcosine in the other case), were doped with TEMPOL (6 mM and pH 7.4) and investigated as a function of the nanoparticle concentration. The resonance field and the resonance linewidth both scale linearly with the nanoparticle concentration.

International Nuclear Information System (INIS)

For the reuse of a waste salt from an electrorefining process of a spent oxide fuel, a separation of rare earth elements by an oxidative precipitation in a LiCl-KCl molten salt was tested without using precipitate agents. From the results obtained from the thermochemical calculations by HSC Chemistry software, the most stable rare earth compounds in the oxygen-used rare earth chlorides system were oxychlorides (EuOCl, NdOCl, PrOCl) and oxides (CeO2, PrO2), which coincide well with results of the Gibbs free energy of the reaction. In this study, similar to the thermochemical results, regardless of the sparging time and molten salt temperature, oxychlorides and oxides were formed as a precipitant by a reaction with oxygen. The structure of the rare earth precipitates was divided into two shapes: small cubic (oxide) and large plate-like (tetragonal) structures. The conversion efficiencies of the rare ...

International Nuclear Information System (INIS)

Uranium dendrites which were deposited at a solid cathode of an electrorefiner contained a certain amount of salts. These salts should be removed for the recovery of pure metal using a cathode processor. In the uranium deposits from the electrorefining process, there are actinide chlorides and rare earth chlorides in addition to uranium chloride in the LiCl-KCl eutectic salt. The evaporation behaviors of the actinides and rare earth chlorides in the salts should be investigated for the removal of salts in the deposits. Experiments on the salt evaporation of rare earth chlorides in a LiCl-KCl eutectic salt were carried out. Though the vapor pressures of the rare earth chlorides were lower than those of the LiCl and KCl, the rare earth chlorides were co-evaporized with the LiCl-KCl eutectic salt. The Hertz-Langmuir relation was applied for this evaporation, and also the evaporation ...

Science.gov (United States)

... 500 ppm, boron increases the 0.2% offset strength; results show that boron doping does not appreciably affect ultimate compressive strength; for 0 ...

British Library Electronic Table of Contents (United Kingdom)

Vanadium carbide is the most effective grain growth inhibitor for ultrafine WC-Co composites due to its high solubility and mobility in the cobalt phase at relatively low temperatures; however, there are still some debates over the best way to introduce it into the WC-Co formulation. In this paper, the differences between admixed and chemically doped grain growth inhibitors on the microstructural development and properties of an ultrafine WC-10Co composite are discussed. The densification rate of chemically doped samples is slower in the early stage of sintering and the WC grain sizes of the sintered alloys are finer than those of admixed samples, leading to the increase of hardness and transverse rupture strength of the sintered alloys. The effectiveness of the chemically doped inhibitor ...

CERN Document Server

We report electronic and magnetic structure of arsenic-doped manganese clusters from density-functional theory using generalized gradient approximation for the exchange-correlation energy. We find that arsenic stabilizes manganese clusters, though the ferromagnetic coupling between Mn atoms are found only in Mn$_2$As and Mn$_4$As clusters with magnetic moments 9 $\\mu_B$ and 17 $\\mu_B$, respectively. For all other sizes, $x=$ 3, 5-10, Mn$_x$As clusters show ferrimagnetic coupling. It is suggested that, if grown during the low temperature MBE, the giant magnetic moments due to ferromagnetic coupling in Mn$_2$As and Mn$_4$As clusters could play a role on the ferromagnetism and on the variation observed in the Curie temperature of Mn-doped III-V semiconductors.

Energy Technology Data Exchange (ETDEWEB)

In order to discuss effects of lithium iodide (LiI) doping on condensation structure of brown coals during heating, spectral changes were measured by using an in-situ FT-IR. It was found that the LiI doping accelerates weight reduction due to heating, and the doping effect is affected by coal structure. Both of Loy Yang (LY) coal and its LiI doped coal (DLY) had absorption intensity of the FT-IR spectra decreased with rising temperature, and the absorption center belonging to an OH group shows different shifts between the LY and DLY coals. This indicates that the LiI doping has affected the change in hydrogen bonding patterns associated with heating. Both of South Banko (SB) and LY coals had the absorption spectral intensity in the OH group decreased as the weight reduction (conversion) rate increased. Reduction in the OH groups associated with heating is caused by volatilization ...

British Library Electronic Table of Contents (United Kingdom)

A novel single-step synthetic method for the preparation of anatase N-doped TiO"2 nanocrystalline at low temperature has been devoleped. The N-doped anatase TiO"2 nanoparticles were synthesized by sonication of the solution of tetraisopropyl titanium and urea in water and isopropyl alcohol at 80^oC for 150min. The as-prepared sample was characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and UV-vis absorption spectrum. The product structure depends on the reaction temperature and reaction time. The photocatalytic activity of the as-prepared photocatalyst was evaluated via the photodegradation of an azo dye direct sky blue 5B. The results show that the N-doped TiO"2 nanocrystalline prepared via sonication exhibit an excellent photocatalytic...

International Nuclear Information System (INIS)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

CERN Multimedia

The experiment NA59: The "Quarter Wave Plate" is a "110" silicon crystal of 5 cm diameter and 10 cm long

UK PubMed Central (United Kingdom)

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

Short communication.

Energy Technology Data Exchange (ETDEWEB)

Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)

International Nuclear Information System (INIS)

English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,

CERN Document Server

In this paper we describe the reconstruction strategies, the calibration procedures and the detector performance results from the latest CMS operation.

Science.gov (United States)

... AT 1170 DEG C. A UNIQUE CREEP CONSTITUTIVE EQUATION CONSISTING OF LINEAR AND POWER LAW TERMS WAS PROPOSED, AND ...

Science.gov (United States)

... where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si , ...

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

Energy Technology Data Exchange (ETDEWEB)

According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M.sub.2 C, M.sub.4 C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

Science.gov (United States)

Results from scanning electron microscopy, Fourier transform infrared spectroscopy and the measurement of thermally stimulated current show that a high density of the physical defects and the chemical defects are introduced into the surface of the silicone rubber plates after they are treated by corona discharge plasma. These defects behave electrically as shallow electron traps, leading to the formation of a uniform discharge in air at higher pressure when the corona-modified silicone rubber is used in dielectric barrier discharge.

International Nuclear Information System (INIS)

Fe-doped MnO2 with a hollow sea urchin-like ball chain shape was first synthesized under a high magnetic field of 10 T. The formation mechanism was investigated and discussed in detail. The synthesized samples were characterized by XRD, SEM, TEM, EMPA, and vector network analysis. By doping MnO2 with Fe, the relative complex permittivity of MnO2 and its corresponding loss tangent clearly decreases, but its relative complex permeability and its corresponding loss tangent markedly increases. Moreover, the theoretically calculated values of reflection loss show that with increasing the Fe content, the as-prepared Fe-doped MnO2 exhibits good microwave absorption capability. -- Graphical Abstract: Fe-doped MnO2 with a hollow sea urchin-like ball chain shape was first synthesized in a high magnetic field of 10 T via a simple chemical process. Display Omitted Highlights: ? Fe-doped MnO2 ...

Energy Technology Data Exchange (ETDEWEB)

The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.

International Nuclear Information System (INIS)

The doping of deuterated polyparaphenylene [C_6D_4]sub(n) with AsF_5 has been investigated by real time neutron diffractometry at 100, 400 and 820 mbar AsF_5 pressure. The reaction appears to be diffusion controlled. Evidence for one doped phase with partial crystalline order was obtained. Structural considerations suggest two polymer chains plus one dopant ''string'' as the repetitive unit. (Auth.).

British Library Electronic Table of Contents (United Kingdom)

Previously, we demonstrated that the lithium ion conduction in the perovskite-type manganese fluoride is attributed to counter cation-site vacancy mechanism. The divalent counter cation-doped KxBa(1-x)/2MnF3 was theoretically predicted as the lithium ion conductor in the perovskite-type manganese fluoride. In this study, we considered the oxygen doping for KxBa(1-x)/2MnF3 to realize the higher lithium ion conductivity. It is because lithium ion forms the stronger ionic bond with the doped oxygen anion. The hybrid-DFT calculations were performed to investigate the lithium ion conduction in the oxygen-doped KxBa(1-x)/2MnF3. The calculation results were discussed from the viewpoints of the potential energy curve, electron densities, and charge and spin densities. The effect of the lithium ion...

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Electron paramagnetic resonance (EPR) of coals was considered by using iodine doping technique. Sub-bituminous coal (WA) and bituminous coal (UF) were used to observe EPR spectra using microwaves. With the UF coal, strength of the narrow component of the spectra was found constant regardless of amount of the doped iodine, wherein radicals without interaction with iodine were detected. Strength of the broad component increased with the iodine doping amount, where in deviation of {pi} electrons was detected, which have been generated as a result of interaction between aromatic rings and iodine in the coals. Spin concentration of the WA coal with low coalification degree is constant regardless of the iodine doping amount, and the interaction of the iodine with the aromatic rings was found small. The higher the coalification degree, the more the aromatic ring structure grows, and electron donor capability ...

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TNF-doped Mylar is a new radiation-hard dielectric that has recently been qualified as a viable substitute for Mylar in capacitors. The advantage of TNF-doped Mylar is that it satisfies both the nuclear safety and radiation hardness requirements of weapons. Mylar is not radiation-hard. Aging and compatibility studies were carried out to insure that (1) TNF does not diffuse from the film during fabrication of the capacitor or during storage; and (2) there are no compatibility problems with aluminum foil (the conductor) or Fluorinert (the secondary dielectric). Losses of TNF were barely detectable during the vacuum bakes used in fabricating capacitors or during accelerated aging tests carried out below T{sub g} (70C) over a two year period in air. In other accelerated tests, no compatibility problems were detected with aluminum or Fluorinert. TNF-doped Mylar is now being used in the MC-4109 capacitor that was called out for ...

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The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

Energy Technology Data Exchange (ETDEWEB)

Both simulations and recent experiments conducted at the Advanced Photon Source showed that the performance of liquid-nitrogen-cooled single-silicon crystal monochromators can degrade in a very rapid nonlinear fashion as the power and for power density is increased. As a further step towards improving the performance of silicon optics, we propose cooling with liquid helium, which dramatically improves the thermal properties of silicon beyond that of liquid nitrogen and brings the performance of single silicon-crystal-based synchrotrons radiation optics up to the ultimate limit. The benefits of liquid helium cooling as well as some of the associated technical challenges will be discussed, and results of thermal and structural finite elements simulations comparing the performance of silicon monochromators cooled with liquid nitrogen and helium will be given.

British Library Electronic Table of Contents (United Kingdom)

Abstract The creation of chirality on Earth and the development of chiral life have been discussed in this highlight. Convincing evidence for the introduction of chirality on Earth is still fragmentary. We believe that by a combination of chiral crystallization and formation of helical polymers with preferred chiral conformational structure is the key to this question. This concept of macromolecular asymmetry has inspired ideas and resulted in possible rules for how chiral life as we know it, could have been introduced. These investigations needed the understanding of the requirements for chiral crystallization, for the stereochemistry of the initial formation of helical polymers, the measurements of optical activity of solids and their coordination with the fundamentals of chirality. Spac...

British Library Electronic Table of Contents (United Kingdom)

The gravitational torque applied on the Earth by the other celestial bodies generates periodic variations in the orientation of the Earth's rotation axis in space which are called nutations. Observations of Earth's nutations allow for insights into the physical properties of the inner core because of the presence of a normal mode, the Free Inner Core Nutation (FICN), which is characterized by a tilt of the inner core figure and rotation axes with respect to the mantle and outer core. The frequency of the FICN is controlled by the strength of the mechanical coupling acting at the inner core boundary (ICB) and by the ability of the inner core to deform under the action of centrifugal and gravitational forces. Attenuation of the FICN reflects energy dissipated by electromagnetic (EM) and visc...

Science.gov (United States)

Nov 8, 2010 ... Ihring Mission 11, the radiation dosimetry measurement system functioned normally and provided data on the Earth's trapped radiation belts ...

Energy Technology Data Exchange (ETDEWEB)

An oxidative precipitation reaction of rare-earth chlorides in a LiCl-KCl molten salt was successfully carried out by a lab-scale apparatus. The conversion efficiency of the used rare earth chlorides into the insoluble precipitates was increased with the sparging time and temperature and was affected on oxygen sparger type. In the conditions of 700 .deg. C molten salt temperature and above 540min sparging time, the final conversion efficiencies were over 99% for all the experimented rare-earth chlorides. The hydrodynamic characteristics of an oxygen-molten salt two phase flow system are very important for a co-oxidative precipitation of rare earth elements.

Science.gov (United States)

... Astronomy & Space Biology Chemistry & Materials Computing Earth & Environment Education ... Materials Research Center at the University of Chicago, one of nearly 30 NSF-supported Materials ...

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The rapidly growing field of remote sensing is beginning to supply massive amounts of high resolution imagery of the earth and other planets. ...

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Feb 15, 2010 ... This astronaut photo from January 4, 2010, shows meander scars and oxbow lakes in the floodplain of the Rio Negro in South America.

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Federal regulators were set to vote on a plan to protect deep water corals and other sensitive fish habitats that will likely include a permanent ban on ...

British Library Electronic Table of Contents (United Kingdom)

This study presents new software, called Google Earth-based Optimal HAulage RouTing System (GEOHARTS), to improve the functionality of Google Earth for optimal haulage routing of off-road dump trucks in construction and mining sites. A modified least-cost path algorithm, which is applicable to working areas with both paved and unpaved temporary roads and can consider the effects of terrain relief and curves along a route on the route planning, was proposed and utilized for the software development. GEOHARTS can determine optimal haulage routes between loaders and dumps that ensure the least travel time or fuel consumption of off-road dump trucks and can visualize the results using an embedded 3D render window of Google Earth. The application to the Pasir open-pit coal mine in Indonesia dem...

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Satellite Observations of the Southeast Pacific Intertropical Convergence Zone During 1993-1998, Halpern, D.; Hung, C.-W., Journal of Geophysical Research ? ...

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of Earth Science data and information management capabilities. Dale Schulz/400 . For your exceptional achievement in leading the joint LaRC/GSFC team in ...

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The portion of the Waterpocket Fold illustrated in this image includes layered rocks formed during the Mesozoic Era (~ 250 65 million years ago) the oldest ...

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goals for multisensor co-registration and fusion. 6 - 12.5 Km ..... Beta-Test toolkit for cyclogenesis and early evolution of cyclones ...

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The SHARP cannon. Hydrogen is compressed in the tube on top, the gun barrel is on bottom. When Jules Verne wrote in 1865 "From Earth to the Moon" he ...

Energy Technology Data Exchange (ETDEWEB)

Extraction of rare earths (La, Ce, Pr, Eu, Gd, Er, Yb) from nitrate solutions by melts of carboxylic acids of the C/sub 17/-C/sub 20/ fraction and stearic acid with paraffin, depending on the temperature (60-90 deg), phase contact time and their volume ratio (O:B from 1:5 up to 1:100), pH of the aqueous phase (2-6), rare earth concentration (10/sup -6/-10/sup -3/ m) is studied. It is shown that in the whole concentration range investigated rare earths are extracted quantitatively into the carboxylic acid melt of C/sub 17/-C/sub 20/ fraction at the equilibrium value of pH>=3.8, while into the melt of 0.1 M stearic acid in paraffin at pH>=4.5.

Science.gov (United States)

Aug 23, 2011 ... Earthquakes, Hurricanes and Stubborn Instruments ... And if earthquakes and stubborn instruments aren't enough, there's this giant hurricane ...

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May 11, 2007 ... "Deforestation in the tropics accounts for nearly 20 per cent of carbon emissions due to human activities," Dr. Canadell says. ...

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Features: FOREST, DEFORESTATION, RIO JAMARI Geographic Region: BRAZIL .... Features: DEFORESTATION, TIERRAS BAJAS DEFORESTATION Geographic Region: BOLIVIA ...

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Zinn, John;. Hoerlin,. Herman; and Petschek,. Albert. G.: The Motion of Bomb. Debris. Following the Starfish. Test. Radiation. Trapped in the Earth's ...

International Nuclear Information System (INIS)

In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C3H8O), water (H2O) and zinc acetate (Zn(CH3CO2)2) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(?) and reflectance R(?) spectra. Conjoint optical and thermal ...

International Nuclear Information System (INIS)

Full text of publication follows: Fission neutron irradiation to steels doped with isotope boron-10 is frequently conducted to study effects of the helium production on mechanical properties. The intrinsic mechanical properties of F82H steels could have been changed due to the boron doping. Recently, we reported that co-doping with boron and nitrogen to F82H (F82H+B+N) improved the mechanical properties of F82H doped only with boron. The mechanical properties of F82H+B+N are successfully comparable with the non-doped F82H before irradiation. In order to evaluate the effects of initial microstructure and helium production on radiation hardening, F82H and F82H+B+N were irradiate d Specimens used in this study were standard F82H martensitic steels, F82H steels doped with 60 mass ppm 10B and 200 ppm N (F82H+10B+N) and F82H steels doped with 60 ...

British Library Electronic Table of Contents (United Kingdom)

Fe-doped TiO2 hollow spheres (Fe-THs) were synthesized by sol?gel process using carbon spheres as templates. The prepared samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV?vis diffuse reflectance spectrum (DRS), N2 adsorption?desorption isotherms, Electron paramagnetic resonance (EPR) spectroscopy and Photoluminescence emission spectroscopy (PL). UV?vis spectra showed that Fe3+ doping could extend the absorption edge to the visible region. EPR spectra showed that Fe3+ was incorporated into the crystal lattice of TiO2, which could inhibit the recombination of photo-induced electron?hole pairs and improve the photocatalytic activity. The photocatalytic activities of the prepared samples were evaluated for the degradation of dye Reactive Brillia...

British Library Electronic Table of Contents (United Kingdom)

Antibacterial activity of Transition metals (Mn, Co) doped ZnO nanopowders prepared by a DC thermal plasma method against Escherichia coli and Staphylococcus aureus are investigated. The phase and morphology studies have been carried out by X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) respectively. All the samples of the present investigation are found to have hexagonal wurtzite structure and crystallite sizes are found to vary from 25nm to 30nm. Our bacteriological study showed the enhanced antibacterial activity of transition metals doped ZnO nanoparticles than undoped ZnO indicating the great potential of ZnO nanoparticles in relevant clinical and biomedical applications.

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Equivalent circuit and electrical parameters for H-doped NH{sub 4}UO{sub 2}PO{sub 4}.3H{sub 2}O self supported membranes have been determined by impedance spectroscopy. The measurements were carried out with a dry membrane, at different temperatures, and a wet membrane in contact with different electrolyte solutions. Resistance values for the dry membrane decrease with temperature increase, which agrees with the weak protonic character of the H-doped ammonium uranylphosphate. On the other hand, differences in the electrical parameters, depending on the electrolyte considered were also obtained and are attributed to different conduction mechanisms. (Author).

British Library Electronic Table of Contents (United Kingdom)

The core-shell luminol-doped SiO2 nanoparticles were synthesized and immobilized on the surface of chitosan film coating graphite electrode by the self-assembled technique. Then, a novel electrogenerated chemiluminescence (ECL) sensor for pyrogallol was developed based on its ECL enhancing effect for the core-shell luminol-doped silica nanoparticles. The ECL analytical performances and the sensing mechanism of this ECL sensor for pyrogallol were investigated in detail. The corresponding results showed that: compared with the conventional ECL reaction procedures by luminol ECL reaction system, the electrochemical (EC) reaction of pyrogallol and its subsequent chemiluminescence (CL) reaction occurred in the different spatial region whilst offering a high efficiency to couple the EC with the ...

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Aimed at post-graduate and post-doctoral researchers in geochemistry, this book reflects the rapid changes in the applications of radioactive and stable isotope analysis to a range of geological and geochemical problems. Isotropic chemistry and methods used in mass spectroscopy are discussed initially. The second section deals with radiometric dating methods. The role of isotopes in climate and environmental research is also explored. The book closes with a section on extra-terrestrial matter, geothermometry and the isotopic geochemistry of the Earth`s lithosphere. (UK).

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Clays and zeolites are among the most important of natural dusts by virtue of their occurrence through out the world on the earth`s surface and their important industrial uses. (The 1:1 layer silicates, including the serpentine and kaolin minerals, are not addressed in this chapter.) This chapter provides basic information on a variety of important aspects of each mineral, including crystal structure diagrams of each and references to more detailed discussions. 110 refs., 20 figs.

CERN Document Server

Among the billions of planetary systems that fill the Universe, we would like to know how ours fits in. Exoplanet data can already be used to address the question: How common are Jupiters? Here we discuss a simple analysis of recent exoplanet data indicating that Jupiter is a typical massive planet rather than an outlier. A more difficult question to address is: How common are Earths? However, much indirect evidence suggests that wet rocky planets are common.

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...Observatory Edinburgh SkyView Virtual Observatory Solar System Simulator Space Telescope Science Institute Space Weather : A Research Perspective Subaru Telescope Project Two Micron All ...Universities for Research in Astronomy Subjects: space observation DeweyClass: 522 Resource type: index Space Weather : A Research Perspective Documents discussing space weather , the ...elements of near-Earth space, Earth-space meteorology and practical consequences of space weather . Glossary included. Author: National Academy of ...

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When a bipolar HVDC transmission system is operating monopolar using the earth as a return path, it is often desired to divert the return current from the earth to the line from the unused pole. To do so requires either that the system be shut down temporarily or that a dc circuit breaker be used. This paper describes the development of such a new dc circuit breaker, and its application on the Pacific Intertie as a Metallic Return Transfer Breaker (MRTB).

CERN Document Server

The bright star 55 Cancri is known to host five planets, including a transiting super-Earth. The interferometric study presented here yields directly determined values for 55 Cnc's stellar astrophyiscal parameters: $R=0.943 \\pm 0.010 R_{\\odot}$, $T_{\\rm EFF} = 5196 \\pm 24$ K. We use isochrone fitting to determine 55 Cnc's age to be 10.2 $\\pm$ 2.5 Gyr, implying a stellar mass of $0.905 \\pm 0.015 M_{\\odot}$. Our analysis of the location and extent of the system's habitable zone (0.67--1.32 AU) shows that planet f ($M \\sin i = 0.155 M_{Jupiter}$) spends the majority of the duration of its elliptical orbit in the circumstellar habitable zone, where, with moderate greenhouse heating, it could harbor liquid water. Finally, our direct value for 55 Cancri's stellar radius allows for a model-independent calculation of the physical diameter of the transiting super-Earth 55 Cnc e ($\\sim 2.05 \\pm 0.15 R_{\\earth}$), which, ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated and modeled the boron diffusion in silicon following ultra-low-energy implantation (500 eV). It is well known that reducing implant energies is an effective way to eliminate transient enhanced diffusion due to the excess of interstitials from the implant. However, for sub-keV B implants diffusion remains enhanced. This enhancement is linked to the presence of a silicon boride layer located at the silicon surface which creates interstitials. This phenomenon is named 'boron enhanced diffusion' (BED). The BED effect is of obvious interest since it counteracts the advantage obtained by reducing the ion implantation energy. For these reasons, we have investigated the diffusion of low-energy boron implanted in crystalline silicon and tested a complete simulation program, which takes into account the effect of boron precipitation and the effect of the ...

Energy Technology Data Exchange (ETDEWEB)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

International Nuclear Information System (INIS)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

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A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Energy Technology Data Exchange (ETDEWEB)

The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.

Science.gov (United States)

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

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In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in ...

International Nuclear Information System (INIS)

This section of the report is concerned with the study of the metallisation, oxidation and doping of materials which are of importance to the micro-electronics industry. The Van de Graaff accelerator and radioactive tracers are used for studying surface and sub-surface behaviour of these materials.

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The Co-doped BaTiO{sub 3} nanosized powders and ceramics were prepared via the sol-gel process. The powders and ceramics were characterized by methods of XRD, SEM and TEM. The dielectric properties of the ceramics were also determined by these methods. The influence of sintering temperature, sintering time and Co concentration on the microstructure and dielectric properties was discussed. The results revealed that the powders were in nanometer scale (30-50 nm) and were mainly composed of cubic BaTiO{sub 3} phase and small amount of BaCO{sub 3}. After sintering, both the cubic BaTiO{sub 3} and BaCO{sub 3} were transformed into tetrahedron BaTiO{sub 3}. The sintering temperatures of the Co-doped BaTiO{sub 3} ceramics decreased (about 100 deg. C) and the Curie temperatures of the ceramics were then moved to lower temperature. In addition, the dielectric constant of the ceramics doping with Co was higher than that of the pure ...

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Carbon supported catalysts can lose their activity over a period of time due to the sintering of the nanometer-sized catalyst particles. The sintering of metal clusters on carbon supports can occur due to the weak interaction between the metal and the support and also due to the corrosion of carbon, especially in fuel cell electrocatalysts. The sintering may be reduced by increasing the interaction between the metal and the support and also by increasing the corrosion resistance of carbon supports. In an effort to mitigate the growth of the nanoparticles, carbon-substituted boron defects were introduced in the carbon lattice. The interaction between the Pt nanoparticles on the pure and boron-doped carbon supports was examined using X-ray photoelectron spectroscopy (XPS). The results indicate that the interaction between the Pt nanoparticles and the boron-doped carbon support was slightly stronger than the interaction between the Pt ...

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Silica microspheres were deposited into two-dimensional periodic arrays and coated with a thin layer of silicon nanocrystals. The luminescence from the silicon nanocrystals coupled into the whispering gallery modes of the spheres, with Q factors that depended on a range of parameters including sphere size, position on the sphere, viewing direction, and thickness of the nanocrystal coating. Scattering from the film-sphere and/or the sphere-substrate contacts resulted in a lower Q for modes that intersect these regions. The highest Q factors obtained in this work were {approx}1500. The results suggest that silica microspheres may be promising candidates for high-Q cavities that incorporate silicon nanocrystals for cavity QED or nonlinear optical effects.

Science.gov (United States)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

International Nuclear Information System (INIS)

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

Science.gov (United States)

ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...

Energy Technology Data Exchange (ETDEWEB)

In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...

Science.gov (United States)

... silicon oxide (BSO), bismuth germanium oxide (BGO), and bismuth titanium oxide (BTO). These crystals are electro-optic, optically active, ...

International Nuclear Information System (INIS)

In device fabrication, dopants are frequently implanted into silicon through silicon dioxide masks. A consequence of this technique is the co-implantation of recoiled oxygen into the substrate. This study investigates the effect of recoiled oxygen on the widely observed transient enhanced boron diffusion. Comparison of the spreading resistance profiles of annealed through-oxide and directly implanted samples reveals that transient enhanced diffusion of boron can be suppressed by the former process. Continued annealing of the through-oxide implanted silicon recovers the enhanced diffusion of boron. This behavior is believed to be due to precipitation of recoiled oxygen. The mechanisms leading to the above observations are discussed and transmission electron microscopy support presented. 11 refs., 5 figs.

Energy Technology Data Exchange (ETDEWEB)

We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

Energy Technology Data Exchange (ETDEWEB)

A strong effort is currently being devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This volume provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced ...

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We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

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Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.).

Science.gov (United States)

Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. ...

Energy Technology Data Exchange (ETDEWEB)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of metal-oxide-semiconductor ...

Energy Technology Data Exchange (ETDEWEB)

The doping of deuterated polyparaphenylene (C/sub 6/D/sub 4/)sub(n) with AsF/sub 5/ has been investigated by real time neutron diffractometry at 100, 400 and 820 mbar AsF/sub 5/ pressure. The reaction appears to be diffusion controlled. Evidence for one doped phase with partial crystalline order was obtained. Structural considerations suggest two polymer chains plus one dopant ''string'' as the repetitive unit.

Science.gov (United States)

We report on the single-particle properties of lanthanide-ion doped oxide nanoparticles. We have demonstrated that their size can be accurately determined from their luminosity. The optically determined size distribution is in very good agreement with the distribution obtained from transmission electron microscopy (TEM). We also showed that the photobleaching of these nanoparticles is related to a reduction process and that we can use it to sense in a concentration-dependent manner the presence of an oxidant like H2O2. Finally, we propose a way to perform nanoparticle-protein coupling and to determine the protein-nanoparticle ratio at the single-particle level.

International Nuclear Information System (INIS)

Experimental results on study of helium concentration influence on degree of molybdenum radiation hardening for various method of cyclotron doping differing in degree and damage character are presented. It is established that accumulation of helium atoms in molybdenum for simultaneous formation of radiation defects caused by low energetic primary-knocked atoms leads to higher degree of hardening than for high energetic ion irradiation. It is shown that with increase of helium atom concentration the degree of radiation hardening for the same level of damage increases. 4 refs.; 3 figs. (author).

British Library Electronic Table of Contents (United Kingdom)

The need for alternative energy increases steadily???especially due to the climate change and the limited availability of fossil fuels. Geothermal power uses the intrinsic heat which is stored in the accessible part of the Earth???s crust. Its importance among the renewable energy resources originates from the almost unlimited energy supply of the Earth and its independence from external influences such as seasonal or even daily climatic variability. Nevertheless, there are risks which have to be assessed. From a mathematical point of view there are four building blocks of the characterization of deep geothermal systems: seismic exploration, gravimetry, modeling transport processes, and modeling the stress field. In particular, local depletion poses a significant risk during the industrial...

International Nuclear Information System (INIS)

The desire to study negative ion structure and negative ion-photon interactions has spurred the development of ion sources for use in research and industry. The many different types of negative ion sources available today differ in their characteristics and abilities to produce anions of various species. Thus the importance of choosing the correct type of negative ion source for a particular research or industrial application is clear. In this study, the results of an investigation on the production of beams composed of negatively-charged rare-earth ions from a cylindrical-cathode-geometry, cesium-sputter-type negative ion source are presented. Beams of atomic anions have been observed for most of the first-row rare-earth elements, with typical currents ranging from hundreds of picoamps to several nanoamps.