Science.gov (United States)

films and cylinders of rare earth doped yttrium aluminum garnets. ... We knew that yttrium aluminum garnet (YAG) could be doped with ...

British Library Electronic Table of Contents (United Kingdom)

Rare-earth oxides are doped into ZnO varistors as grain growth inhibitors for increasing the varistors' voltage gradients. However, their leakage currents become large and their nonlinear coefficients decrease at the same time. The reasonable explanation for such a phenomenon has not yet been available. In this paper, the temperature dependences of varistor samples' leakage currents are investigated, which reveal that the increased leakage currents of ZnO varistors with Y2O3 doping are mainly due to the bypass paths through the intergranular materials at grain corners.

CERN Document Server

We report electronic and magnetic structure of arsenic-doped manganese clusters from density-functional theory using generalized gradient approximation for the exchange-correlation energy. We find that arsenic stabilizes manganese clusters, though the ferromagnetic coupling between Mn atoms are found only in Mn$_2$As and Mn$_4$As clusters with magnetic moments 9 $\\mu_B$ and 17 $\\mu_B$, respectively. For all other sizes, $x=$ 3, 5-10, Mn$_x$As clusters show ferrimagnetic coupling. It is suggested that, if grown during the low temperature MBE, the giant magnetic moments due to ferromagnetic coupling in Mn$_2$As and Mn$_4$As clusters could play a role on the ferromagnetism and on the variation observed in the Curie temperature of Mn-doped III-V semiconductors.

International Nuclear Information System (INIS)

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or ...

Energy Technology Data Exchange (ETDEWEB)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material. ...

British Library Electronic Table of Contents (United Kingdom)

This work is concentrated on growth, spectroscopy and laser performance of thulium-doped vanadate crystals. At the beginning the growth techniques are analyzed and then the matrix of vanadates crystal, its structure and physicochemical properties are explained together with the rare earth activators influence. Detailed spectroscopy of the thulium-doped vanadate crystals then follows. On the background of this theoretical analysis and state of the art of the subject the description of thulium vanadate lasers (especially Tm:YVO"4, Tm:GdVO"4, and Tm:LuVO"4) together with their generated output radiation characteristics are presented.

British Library Electronic Table of Contents (United Kingdom)

Direct visualization of rare earths in @a- and @b-SiAlON unit-cells is performed through Z-contrast imaging technique in an aberration-corrected scanning transmission electron microscope. The preferential occupation of Yb and Ce atoms in different interstitial locations of @b-SiAlON lattice is demonstrated, yielding higher solubility for Yb than Ce. The triangular-like host sites in @a-SiAlON unit cell accommodate more Ce atoms than hexagonal sites in @b-SiAlON. We think that our results will be applicable as guidelines for many kinds of rare-earth-doped materials.

Science.gov (United States)

Surface scientists argue about the fundamental nature of Schottky barriers, or more precisely what determines the location of the Fermi level at semiconductor surfaces and interfaces. Electrical and materials engineers worry about how to make Schottky barrier diodes and gates to field effect transistors and the control of barrier heights. There is some interesting middle ground in which the location of the surface and interface Fermi level can, for example, determine semiconductor doping characteristics during crystal growth. The authors will discuss several interesting and well known examples of doping characteristics which are still somewhat mysterious. Specifically, they address the following question: (1) why is Ge doped GaAs p type when grown from Ga melts but n type when grown from Au melts (2) why is low resistivity p type ZnSe, AlAs, and AlGaInP hard to make, and more ...

Energy Technology Data Exchange (ETDEWEB)

III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the use of arsenides and phosphides as photovoltaic (PV) devices is confined only to space applications since their price is much higher than conventional Si flat panel modules, the leading PV market technology. But with the introduction of multijunction solar cells capable of operating in high concentration solar light, the area and, therefore, the cost of these cells can be reduced and will eventually find an application and market also on ...

Energy Technology Data Exchange (ETDEWEB)

We investigated the electrical characteristics and the junction depth of ultra-shallow junctions formed by using the plasma-doping method. Compared with ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sheet resistances. The junction depths of the plasma-doped samples were 150 A and 330 A after annealing for 10 s at 900 .deg. C and 950 .deg. C, respectively. For the same junction depth, the sheet resistance of the B{sub 2}H{sub 6} plasma-doped sample was an order of magnitude less than that of the 500-eV B-ion implanted sample. Cross-sectional transmission electron microscopy and deep level transient spectroscopy showed that the defects formed by the B{sub 2}H{sub 6} plasma-doping process could be removed by annealing at 950 .deg. C for 10 s. The scaling of ...

International Nuclear Information System (INIS)

The dependence of the carrier concentrations, of the resistivity and of the Hall coefficient of irradiated silicon on the neutron fluences has been investigated, starting from the supposition that the main phenomena induced by irradiation in the semiconductor bulk are shallow-donor removal and deep-centres creation. The free parameters of the model are initial doping of the starting material, the permitted energy level values of the radiation-induced centres in the semiconductor band gap and their introduction rates. The influence of each parameter on the calculated dependences is studied in detail, for three cases: one deep acceptor-like centre, two deep acceptors and one deep acceptor plus one deep donor-like centre. each of the three cases is discussed in correspondence with different experimental results.

International Nuclear Information System (INIS)

The importance of point defects in semiconductor and function materials has been studied in detail, but effective means for detecting point defects has not been available for a long time. The end of range defects in Si, produced by 140 keV Ge"+ implantation, were investigated as detectors for measuring the interstitial concentration created by 42 keV B"+ implantation. The concentration of interstitial resulting from the B"+ implantation and the behavior of the interstitial flux under different annealing condition were given. The enhanced diffusion in the boron doped EPI marker, resulting from mobile non-equilibrium interstitials was demonstrated to be transient. Interstitial fluxes arising from processing can be detected by transient enhanced diffusion (TED) of doped marker layers as well

Energy Technology Data Exchange (ETDEWEB)

Absorption and emission measurements at liquid-helium temperature, liquid-nitrogen temperature and room temperature have been performed on tetragonal scheelite-type rare earth sodium double molybdates Na[sub 5]RE(MoO[sub 4])[sub 4] and on RE-doped Na[sub 5]Gd(MoO[sub 4])[sub 4] samples. The rare earth occupies one single crystallographic position with S[sub 4] as point symmetry. The spectra were analysed according to the crystal field theory. From the experimental data, nearly complete energy level schemes of the Pr[sup 3+] and Nd[sup 3+], on the 4f [sup 2] and 4f [sup 3] configurations were derived. Very good correlation was obtained between the experimental and simulated energy level schemes, first for the approximated D[sub 2d] and then for the true S[sub 4] symmetries. The crystal field parameters vary smoothly with the atomic number of the rare earth, when compared with those determined previously ...

International Nuclear Information System (INIS)

The spectroscopic properties of Pr"3"+ doping two lanthanum chlorotungstate hosts: the orthorhombic LaWO4Cl (1-1) and the hexagonal La3WO4Cl6 (3-1), as well as those of PrWO4Cl and Pr3wO613 have been investigated. The simulations of the energy level schemes are carried out within the crystal field theory frame. Each simulation involves 7 free ion parameters and 14 non-zero crystal field parameters (cfps), corresponding to the C_s point symmetry of the site occupied by the rare earth, in both structures.

Energy Technology Data Exchange (ETDEWEB)

The authors present the emitter efficiency results for the thin film 25 percent Ho YAG (Yttrium Aluminum Garnet, Y3Al5O12) selective emitter from 1000 to 1700 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2 less than lambda less than 3.2 microns) and used to calculate the radiative efficiency. The radiative efficiency and power density of rare earth doped selective emitters are strongly dependent on temperature and experimental results indicate an optimum temperature (1650 K for Ho YAG) for thermophotovoltaic (TPV) applications.

Energy Technology Data Exchange (ETDEWEB)

A temperature gradient across a thick ({ge}.1mm) film selective emitter will produce a significant reduction in the spectral emittance from the no temperature gradient case. Thick film selective emitters of rare earth doped host materials such as yttrium-aluminum-garnet (YAG) are examples where temperature gradient effects are important. In this paper a model is developed for the spectral emittance assuming a linear temperature gradient across the film. Results of the model indicate that temperature gradients will result in reductions the order of 20{percent} or more in the spectral emittance. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

The difficulty in making good Ohmic contact at the interfaces with p-doped ZnSe is an important problem hindering the realization of blue-light-emitting diode lasers based on the II-VI semiconductor technology. So far no metal or semiconductor material has been found to have a low enough barrier at the (001) interface with ZnSe. A possible solution to this problem is the insertion of a so-called {ital barrier-reduction layer} at the interface with ZnSe. We have investigated the interface formation energies and valence-band offsets at the (001) interface between Al{sub x}Ga{sub 0.5{minus}x}In{sub 0.5}P and ZnSe. The results of our calculations show the existence of a strong interdependence between the valence-band offset and the interface geometric structure. The interface is found to have structural and electronic similarities to the GaAs-ZnSe(001) system. The very low values obtained for the valence-band offset confirm the ...

Energy Technology Data Exchange (ETDEWEB)

A focused ion beam (FIB) system produces a final beam spot size down to 0.1 {mu}m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 m or less. 13 figs.

Energy Technology Data Exchange (ETDEWEB)

The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Energy Technology Data Exchange (ETDEWEB)

Thermophotovoltaic (TPV) converters were developed and tested at the heat source operating temperature of 1,700 K. Rare-earth-doped yttrium aluminum garnet (YAG) and lutetium yttrium aluminum garnet (Lu, YAG) selective emitters, as well as a blackbody emitter, were coupled to InGaAs/InP photovoltaic (PV) cells and bandpass/infrared (IR) reflector filters. YAG-based selective emitters were adopted with Ho, Tm, and Er. PV cells had bandgaps of 0.51, 0.57, and 0.69 eV. Converter energy conversion efficiencies approaching 30%, as well as electrical output power densities near 2 W/cm{sup 2} were demonstrated. The overall performance of the filtered blackbody-based converter was found to be superior to the selective emitter YAG-based converters. The details of the measurements performed on the above converters and their individual components are presented.

Science.gov (United States)

The Gateway to Astronaut Photography of Earth hosts the best and most complete online collection of astronaut photographs of the Earth.

Science.gov (United States)

The Gateway to Astronaut Photography of Earth hosts the best and most complete online collection of astronaut photographs of the Earth.

Science.gov (United States)

... Tunable semiconductor lasers are essential components for links employing optical frequency modulation (OFM) for enhanced dynamic range or ...

International Nuclear Information System (INIS)

Y2Te4O11:Eu3+ and Y2Te5O13:Eu3+ single crystals in sub-millimeter scale were synthesized from the binary oxides (Y2O3, Eu2O3 and TeO2) using CsCl as fluxing agent. Crystallographic structures of the undoped yttrium oxotellurates(IV) Y2Te4O11 and Y2Te5O13 have been determined and refined from single-crystal X-ray diffraction data. In Y2Te4O11, a layered structure is present where the reticulated sheets consisting of edge-sharing [YO8]13- polyhedra are interconnected by the oxotellurate(IV) units, whereas in Y2Te5O13 only double chains of condensed yttrium-oxygen polyhedra with coordination numbers of 7 and 8 are left, now linked in two crystallographic directions by the oxotellurate(IV) entities. The Eu3+ luminescence spectra and the decay time from different energy levels of the doped compounds were investigated and all detected emission levels were identified. Luminescence properties of the Eu3+ cations have been interpreted in consideration of the now accessible ...

Energy Technology Data Exchange (ETDEWEB)

The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO{sub 2}-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also decreases the doping ...

Energy Technology Data Exchange (ETDEWEB)

A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due to the second mechanism), can be explained. Numerical ...

Energy Technology Data Exchange (ETDEWEB)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P{sup +}/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B{sup +} and BF{sub 2}{sup +} ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF{sub 3} as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit ...

Energy Technology Data Exchange (ETDEWEB)

Semiconducting properties of passive films formed on AISI 304 stainless steel grade were investigated by capacitances measurements in chloride containing aqueous solutions for different surface finishes: BA (bright annealing in hydrogen containing atmospheres) and 2B (standard annealing in oxidising atmospheres followed by pickling in acid, then water rinsing). Mott-Schottky analysis shows that for high enough electrode potential, and whatever the surface finish, the films behave like n-type semiconductors. 2B passive film appears to be more donor-doped than BA one and the density of donor states increases with chloride concentration. The electron donor levels are assumed to be generated by negatively charged cations vacancies produced by the chloride ions reaction with the outer passive film. This reaction looks easier for 2B than BA condition, which explains why BA resists better than 2B to pit nucleation.

Energy Technology Data Exchange (ETDEWEB)

A C{sub 60} {sup +} primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C{sub 60} {sup +} depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C{sub 60} {sup +} SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C{sub 60} {sup +} SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs{sup +} SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other ...

International Nuclear Information System (INIS)

The comprehension of passivity and its protective character against corrosion is closely connected with the electronic properties of passive films. Passive films formed anodically on carbon steel in borate/boric acid solution, pH 9.2, have been characterised by electrochemical impedance spectroscopy (EIS). Mott-Schottky plots and impedance measurements were made on films formed at different potentials and times. The investigation allowed the determination of the semiconductive properties of the films. The results of the capacitance response indicate that the passive films behave like highly doped n-type semiconductors, showing that the passive film properties are dominated by iron. The value of donors density (N _D) for the passive film is of the order of 10"2"1 cm"-"3 and decreases with increasing formation time and potential, indicating that defects decrease with increasing film thickness. Based on the information about the physical ...

International Nuclear Information System (INIS)

Low-energy focused ion beam (FIB) is a useful tool for shallow doping, gas-assisted etching, and other uses to minimize substrate damage in semiconductor device fabrication. The possibility to form a finely FIB of low energy under 1 keV was suggested in the investigations on the retarding mode in electron optical systems. The abilities of the simplest type of retarding mode FIB column are examined here. The optical properties are calculated for the corresponding model and some images are observed with Ga"+ ion beams <0.3 #mu#m in diameter for beam energies, 10, 5, and 1 keV, using a retarding mode one-lens FIB system. 1-keV and 100-eV Ga"+ FIB was implanted to Ga/As substrate, and the defects are analyzed by deep-level transient spectroscopy. The defect concentration for 100 eV was < (1)/(5) that for 1000 keV.

International Nuclear Information System (INIS)

The crystal structure of borophosphates ABPO_5 (A = alkaline earth or Pb) was resolved on a polycrystalline sample using the Rietveld method. The x-ray diffraction patterns data show that ABPO_5 crystallize in a centrosymmetric space group P3_121 and their structure is related to the borogermanates REBGeO_5 with a stillwellite-type structure. Pr"3"+ ion was used as a local structural probe to corroborate the structural resolution results. Absorption and fluorescence spectra of A_1_-_xPr_xBP_1_-_xGe_xO_5 (A alkaline earth or Pb; x = 0.05) have been investigated at different temperatures. At 9 K the 3"H_4#->#"3P_0 transition of trivalent praseodymium ion (4f"2 configuration) is observed as a single line. This indicates a unique crystallographic site for the rare earth ion in these compounds replacing the divalent cation. Energy level schemes were deduced from the low-temperature spectroscopic measurements. Comparing the ...

Energy Technology Data Exchange (ETDEWEB)

The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination ...

International Nuclear Information System (INIS)

The Yb"3"+-doped non-linear rare-earth calcium oxoborate crystals GdCa_4O (BO_3)_3 (GdCOB) and YCa_4O(BO_3)_3 (YCOB) were investigated by low-temperature absorption and selective excitation spectroscopy. The selective excitation and emission spectra revealed the spectral features of the main Yb"3"+ centre and the principal minority one in both crystals. The energy level schemes for these centres in both hosts, as well as structural assignments, were proposed. It was established that the minority centre, which represents about 10% of the total intensity and was assigned to Yb"3"+ in a Ca"2"+ site, is not a trap but an energy donor for the main centre. Common features of and differences between the vibronic structure of the two centres in GdCOB and YCOB are discussed. The existence of additional features in YCOB:Yb spectra is pointed out. (author)

British Library Electronic Table of Contents (United Kingdom)

This paper presents studies carried out on tin-doped indium sulfide films prepared using Chemical Spray Pyrolysis (CSP) technique. Effect of both in-situ and ex-situ doping were analyzed. Ex-situ doping was done by thermal diffusion, which was realized by annealing Sn/In2S3 bilayer films. In-situ doping was accomplished by introducing Sn into the spray solution by using SnCl45H2O. Interestingly, it was noted that by ex-situ doping, conductivity of the sample enhanced considerably without affecting any of the physical properties such as crystallinity or band gap. Analysis also showed that higher percentage of doping resulted in samples with low crystallinity and negative photosensitivity. In-situ doping resulted in amorphous films. In contrast to ex-situ doping, `in- situ doping' resulted i...

Energy Technology Data Exchange (ETDEWEB)

Holmium doped barium based hexaferrites BaFe{sub 12-2x}Ho{sub 2x}O{sub 19} with (x = 0.0-1.0) were synthesized by solid state reaction method. Structural and magnetic characterization of these ferrites provide significant information about their reactive physical properties. X-ray analysis reveals that in all samples M-type structure exist with few secondary phases. Scanning electron microscope revealed the grain size of the specimen. The results show that grain size decreases with the substitution degree of Holmium. Thus rare earth element Holmium Ho{sup 3+} acts as a grain growth inhibitor. The magnetic hysteresis loops show the variation in the values of magnetic parameters like saturation magnetization (M{sub s}), remanent magnetization (M{sub r}) and coercivity (H{sub c}) were observed by changing Ho{sup 3+} content in BaFe{sub 12-2x}Ho{sub 2x}O{sub 19} ferrites. Coercivity showed a maximum value of 2230 Oe for (x = 0.4) and then ...

Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

Science.gov (United States)

Feb 25, 2008 ... NASA's Visible Earth catalog of NASA images and animations of our home planet.

CERN Document Server

Solid-state communications

International Science & Technology Center (ISTC)

Elaboration of Electrochemical Solar Energy Converter Incorporating Cadmium Selenide Semiconductor Developed Electrochemically

Science.gov (United States)

(Watkins and. Corbett,. 1964) which is a phosphorous-vacancy complex, i.e., ...... Grover. 1965. Semiconductor. Surfaces. ...

International Nuclear Information System (INIS)

The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is reported from pure and doped GaP single crystals grown over 40 years ago and evaluated ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

Not Available

Energy Technology Data Exchange (ETDEWEB)

Short communication.

International Nuclear Information System (INIS)

The crystal structure, electronic structure, and photoluminescence properties of EuxSi6-zAlz-xOz+xN8-z-x (x=0-0.1, 0xMySi6-zAlz-x-yOz+x+yN8-z-x-y (M=2Li, Mg, Ca, Sr, Ba) have been studied. Single-phase EuxSi6-zAlz-xOz+xN8-z-x can be obtained in very narrow ranges of x?0.06 (z=0.15) and z2+ ions can be incorporated into nitrogen-rich Si6-zAlzOzN8-z. The Eu2+ ion is found to occupy the 2b site in a hexagonal unit cell (P63/m) and directly connected by six adjacent nitrogen/oxygen atoms ranging 2.4850-2.5089 A. The calculated host band gaps by the relativistic DV-X? method are about 5.55 and 5.45 eV (without Eu2+ 4f5d levels) for x=0 and 0.013 in EuxSi6-zAlz-xOz+xN8-z-x (z=0.15), in which the top of the 5d orbitals overlap with the Si-3s3p and N-2p orbitals within the bottom of the conduction band of the host. EuxSi6-zAlz-xOz+xN8-z-x shows a strong green emission with a broad Eu2+ band centered at about 530 nm under UV to near-UV excitation range. The excitation and emission spectra are ...

Science.gov (United States)

Jun 8, 2006 ... It also reflects the large amount of deforestation that has occurred on the Haitian side of the border. One can easily see from satellite imagery ...

Science.gov (United States)

Mar 30, 2007 ... Tropical forests are home to half the Earth's species, and their trees are an immense standing reservoir of carbon. Deforestation will have ...

Science.gov (United States)

... of this material is, however, outside the currently approved earth fill materials collection area ... fill material suitable for its intended use. The currently approved site contains material that is ...

Energy Technology Data Exchange (ETDEWEB)

The photoluminescence spectra of the lanthanum and gadolinium oxynitrates doped with Eu[sup 3+], REONO[sub 3]:Eu[sup 3+] (RE=La and Gd) were measured at 77 and 300 K. The [sup 7]F[sub J] (J=0-5) energy level schemes for the 4f [sup 6] electron configuration were simulated by a C[sub 2v] phenomenological crystal field (CF). The nine non-zero CF parameters for the C[sub 2v] site symmetry reproduce the experimental energy level schemes with rms deviations of 7 and 5 cm[sup -1] for the LaONO[sub 3] and GdONO[sub 3] hosts, respectively. The CF effect is stronger in the lanthanum host although otherwise the CF parameters for the two oxynitrate hosts differ only slightly. The B[sup k][sub 2] (k=2, 4 and 6) values are low indicating only a slight deviation from a higher C[sub 4v] symmetry. The B[sup 2][sub 0], B[sup 4][sub 0] and B[sup 4][sub 4] parameters assume high values which are similar to those obtained previously for the other RE oxy compounds, i.e. oxyhalides, ...

Energy Technology Data Exchange (ETDEWEB)

Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.

International Nuclear Information System (INIS)

2009 p. 143-144 Ukraine Lepikh, Ya.I. Odesa National University, Odesa

Science.gov (United States)

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

Energy Technology Data Exchange (ETDEWEB)

Motivation is given for a technique to more thoroughly test semiconductor equipment control systems. A description is given of a simulator-based control system testing technique. Potential benefits that could be realized by using this technique in the semiconductor industry as well as benefits documented by using this technique in other industries are described. Specific requirements for using the technique in the semiconductor industry are outlined. A summary of a survey of nine commercial simulation systems is given. Finally, the outcome of the survey is compared with the requirements for using the technique.

Energy Technology Data Exchange (ETDEWEB)

The electrogeometric model cannot consider the influence of some parameters on the screening of the wire conductor of the H.V. lines. For analysing the influence of these parameters (the conductor potential, the influence of the distance from phase conductor to earth wire, the influence of the reducing factor of the striking earth distance, the earth slope, etc.), the Monte Carlo method is preferable. The influence of the earth slope on the screening effect of the wire conductor for different conditions is presented in this paper. (author)

CSIR Research Space (South Africa)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Energy Technology Data Exchange (ETDEWEB)

Fe-sheathed MgB{sub 2} tapes with cheap stearic acid, Mg stearate and Zn stearate doping were prepared through the in situ powder-in-tube method. It is found that J{sub c}, H{sub irr} and H{sub c2} were significantly enhanced by doping. Compared to the pure tapes, J{sub c} for all the doped samples was improved by more than an order of magnitude in a high-field regime. At 4.2 K, the transport J{sub c} reached 2.02 x 10{sup 4} A cm{sup -2} at 10 T for the Zn stearate doped tapes and 3.72 x 10{sup 3} A cm{sup -2} at 14 T for the stearic acid doped samples, respectively. Moreover, at 20 K, H{sub irr} for the Zn stearate doped tape achieved 10 T, which is comparable to that of the commercial NbTi at 4.2 K. The improvement of J{sub c}-H properties in doped samples can be attributed to the increase of H{sub c2} resulting from the incorporation of ...

KoreaScience (Korea)

Full Text Available

Energy Technology Data Exchange (ETDEWEB)

In this work, we perform spectroscopic studies to characterize the energy transfer processes occurring in rare-earth doped lithium fluoride systems, aiming the optimization of the population inversion of these media. Yb{sup 3+} ion was used in order to probe the electron-phonon coupling in LiYF{sub 4}, LiGdF{sub 4} and LiLuF{sub 4} matrices. In these systems it was obtained the average phononenergy, the vibronic transition probability and Huang-Rhys coupling constant. These parameters are dependent on the crystal host and the LiLuF{sub 4} system presents excluded correlation effects, an electronic repulsion that weakens the vibronic coupling. The Tm:Ho:LiYF{sub 4} system was studied under diode laser pumping at 796 nm, aiming the 2 {mu}m emission optimization. The ideal conditions of concentration and laser power were determined favouring the latter emission. Upconversion processes of two photons were identified besides the energy transfer ...

Energy Technology Data Exchange (ETDEWEB)

Vanadium doped manganese bi-oxide has been obtained from a solution containing both cations. The X-ray diffraction of this material indicates a rutile-type phase but the enlargement of some lines supports the existence of several lattice defects. Also the particle size of the doped material is significantly smaller than the one of the non-doped material obtained in the same conditions. The presence of pentavalent vanadium inside the lattice leads to a small amount of trivalent manganese. Electron microscopy shows the existence of defects which have a tendency of becoming well-ordered and to stabilize a sur-structure. At ambient temperature, the electrochemical behaviour of doped manganese bi-oxide is greatly improved when compared to the non-doped phase. This behaviour is due to the presence of numerous lattice defects and to the smaller size of crystallites. In polymer batteries, ...

International Nuclear Information System (INIS)

The principle of conservation and transferability of chemical bonds explains the recent discovery by extended x-ray absorption fine-structure measurements of two unequal anion-cation bond lengths R/sub A/C and R/sub B/C in A/sub x/B/sub 1-x/C zinc-blende semiconductor alloys despite the close adherence of the lattice constant to the average value (Vegard rule). This bond alternation, manifested as a structural distortion to a local chalcopyrite coordination around the anions, explains also most of the observed optical bowing in semiconductor alloys.

Science.gov (United States)

This letter describes the first lasing experiment of the heterostructure semiconductor Raman laser with lateral confinement of both the Stokes and pump fields. It has a GaP Raman active layer with thickness of 10 ..mu..m and Al/sub 0.1/Ga/sub 0.9/P cladding layers. The stripe of the active layer has been fabricated by a plasma etching technique. Steps should be taken to realize the semiconductor Raman laser pumped by an injection laser, applicable to wideband optical communication.

International Nuclear Information System (INIS)

Nonparabolicity of the heavy hole band in diamond-like semiconductors, which occurs within the framework of the three band model with the perturbation from the other bands taken into account according to the Loewdin procedure, is studied. A direct dependence of nonparabolicity on the band anisotropy (caused by the different effect of Gamma/sub 15c/ and Gamma/sub 12c/ bands) and the inverse dependence on the magnitude of the spin-orbit splittiing is established. A connection between the effective mass of heavy holes and their energy is obtained, which is valid for the majority of diamond-like semiconductors, except for materials with a very strong nonparabolicity of the band of silicon type.

Science.gov (United States)

Al Fleig, PITA Analytic Sciences. 7th Earth Science Data Systems Working Group Meeting ..... The Reuse Industry in Brazil, CESAR, and the Reuse in Software ...

British Library Electronic Table of Contents (United Kingdom)

The estimation of numerical values of the mean distance of closest approach of ions, a, of alkaline-earth metal ion salts in aqueous solutions, determined from activity coefficients, as well as from different theoretical approaches, is presented and discussed.

Science.gov (United States)

This frequently-asked-questions feature provides answers about earthquakes, faults, plate tectonics, and earth structure. Maps and diagrams are provided with some answers, and links to additional information and to related topics are included.

UK PubMed Central (United Kingdom)

We calculate the expected fluxes of cosmic ray nuclei with charge 5 ≤ Z ≤ 28 at various depths in the earth's atmosphere, taking into account the initial charge distribution,...Full Text Available

Science.gov (United States)

For coupled quantum wires and dots, tunneling effects and coherent transport for quantum computing are being studied. In 2D systems, electron-hole bilayers for exciton...

Science.gov (United States)

COATINGS FOR THE METAL-SEMICONDUCTOR SOLAR CELLS 3S GIVEN. THIS METHOD UTILIZES THE MEASURED EQUIVALENT INDEX OF. REFRACTION OBTAINED FROM ELLIPSOMETRY ...

Science.gov (United States)

Metal-semiconductor solar cells reported to date exhibit inherently low output voltages. This effect isa consequence of high diode "saturation" ...

Energy Technology Data Exchange (ETDEWEB)

The low-power operation of a semiconductor buried-heterostructure Raman laser is reported. We are developing these devices for very wide-band optical communication in the terahertz frequency region. It has a structure with a GaP active layer and Al{sub {ital x}}Ga{sub 1{minus}{ital x}}P cladding layers, which are grown by the temperature-difference method under controlled vapor pressure. By making the stripe width 30--40 {mu}m, we have obtained a threshold pump power of 500 mW. A low-threshold semiconductor Raman laser can be pumped by semiconductor injection lasers. We have measured the optical loss of the waveguide and detected the contribution from scattering and leakage at heterointerfaces.

International Nuclear Information System (INIS)

... angular momentum cranking model even-even nuclei gadolinium 156 governor

Energy Technology Data Exchange (ETDEWEB)

This paper presents an analysis of the performance of a selective emitter using small particles of rare earth compounds stable at high temperatures in a low emittance inert gas stream. An expression for the spectral emissive power excluding radiation scattering was derived to include the radiation in the emission band, produced by electronic transitions of the rare earth ion, and the continuum radiation outside the emission band produced by the rare earth host. Preliminary results suggest that a selective emitter based on suspended rare earth oxide particles will have high efficiency and merits further experimental investigation. {copyright} {ital 1996 American Institute of Physics.}

International Nuclear Information System (INIS)

In this thesis the results are described of an investigation into the radiationless transfer of electronic excitation energies in various Eu"3"+ and Tb"3"+ compounds, which show structural peculiarities in the rare-earth sublattice. These peculiarities are an one-dimensional sublattice as well as two different crystallographic locations for the rare-earth ion. 154 refs.; 43 figs.; 12 tabs.

Energy Technology Data Exchange (ETDEWEB)

This study is devoted to the formation of high-low-level-doped selective emitter for crystalline silicon solar cells for photovoltaic application. We report here the formation of porous silicon under chemical reaction condition. The chemical mixture containing hydrofluoric and nitric acid, with de-ionized water, was used to make porous on the half of the silicon surface of size 125 x 125 cm. Porous and non-porous areas each share half of the whole silicon surface. H{sub 3}PO{sub 4}:methanol gives the best deposited layer with acceptable adherence and uniformity on the non-porous and porous areas of the silicon surface to get high- and low-level-doped regions. The volume concentration of H{sub 3}PO{sub 4} does not exceed 10% of the total volume emulsion. Phosphoric acid was used as an n-type doping source to make emitter for silicon solar cells. The measured emitter sheet resistances at the high- and ...

International Nuclear Information System (INIS)

The extraction of rare earth elements, yttrium and aluminium from red mud resulting from alumina production with the ion-exchange resin KU-2-8n was studied. Experimental results are presented. The technology of hydrometallurgical processing of pulps obtained by sorption extraction of scandium from red mud is developed. It is shown that in the process of precipitation from sulfate sulfuric acid desorbate it became possible to obtain a high degree of rare earths deposition. The use of sodium hydroxide makes it possible to obtain a maximum deposition of rare earths and aluminium - 99.9 %. Aluminium leaching from crude composite concentrate gives a possibility to get concentrates which 15 - 20 times richer in yttrium and rare earths

Energy Technology Data Exchange (ETDEWEB)

Surface doping of conjugated polymers is realized by depositing a thin layer of graphene oxide (GO) on top of the polymers. The high proton density and the unique 2D structure of GO facilitate the protonic surface doping of conjugated polymers to achieve high conductivities. This finding represents a new strategy for improving charge transport across the metal/conjugated polymer interface to achieve much improved performance in organic solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Energy Technology Data Exchange (ETDEWEB)

Electron paramagnetic resonance was used to investigate surface-coated magnetite-based magnetic fluids doped with TEMPOL. Two magnetic fluid samples, having magnetite nanoparticles with average diameter of 94 A and coated with different coating layers (lauric acid plus ethoxylated polyalcohol in one case and oleoylsarcosine in the other case), were doped with TEMPOL (6 mM and pH 7.4) and investigated as a function of the nanoparticle concentration. The resonance field and the resonance linewidth both scale linearly with the nanoparticle concentration.

Energy Technology Data Exchange (ETDEWEB)

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

International Nuclear Information System (INIS)

To calculate the energy band structures in semiconductors using the relativistic augmented plane wave method, atomic potential and charge density are needed, which are calculated by self-consistent method. Wave function for one electron is determined by solving the Dirac equation with the Hartree-Fock equation based on the slater's exchange potential. The results of calculation for Cu"+"1 are given. (Author).

International Nuclear Information System (INIS)

For the reuse of a waste salt from an electrorefining process of a spent oxide fuel, a separation of rare earth elements by an oxidative precipitation in a LiCl-KCl molten salt was tested without using precipitate agents. From the results obtained from the thermochemical calculations by HSC Chemistry software, the most stable rare earth compounds in the oxygen-used rare earth chlorides system were oxychlorides (EuOCl, NdOCl, PrOCl) and oxides (CeO2, PrO2), which coincide well with results of the Gibbs free energy of the reaction. In this study, similar to the thermochemical results, regardless of the sparging time and molten salt temperature, oxychlorides and oxides were formed as a precipitant by a reaction with oxygen. The structure of the rare earth precipitates was divided into two shapes: small cubic (oxide) and large plate-like (tetragonal) structures. The conversion efficiencies of the rare ...

International Nuclear Information System (INIS)

Uranium dendrites which were deposited at a solid cathode of an electrorefiner contained a certain amount of salts. These salts should be removed for the recovery of pure metal using a cathode processor. In the uranium deposits from the electrorefining process, there are actinide chlorides and rare earth chlorides in addition to uranium chloride in the LiCl-KCl eutectic salt. The evaporation behaviors of the actinides and rare earth chlorides in the salts should be investigated for the removal of salts in the deposits. Experiments on the salt evaporation of rare earth chlorides in a LiCl-KCl eutectic salt were carried out. Though the vapor pressures of the rare earth chlorides were lower than those of the LiCl and KCl, the rare earth chlorides were co-evaporized with the LiCl-KCl eutectic salt. The Hertz-Langmuir relation was applied for this evaporation, and also the evaporation ...

International Nuclear Information System (INIS)

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

British Library Electronic Table of Contents (United Kingdom)

N-doped TiO2 has been prepared by use of sol?gel systems containing titanium alkoxide, with nitric acid as the nitrogen source. The time needed for gelation of the systems was drastically reduced by ultrasonic irradiation. The peaks assigned to the nitrate and nitrous ions were observed by FT-IR measurement during the sol?gel reaction. The N-doping was confirmed by the observation of N?O peaks in the XPS spectrum of the sample heated at 400??C. The nitrate ion acted as an oxidizer of the ethanol solvent and titanium species. The TiO2 became doped with nitrogen oxide species as a result of reduction of nitrate ion incorporated into the dried gel samples. These results indicated that the added nitric acid was reduced during the sol?gel transition and heating process, and the resulting NO spe...

British Library Electronic Table of Contents (United Kingdom)

Heavily doped emitters with low saturation current density are of particular interest for selective emitter solar cells. These emitters can be obtained by laser doping through the phosphosilicate glass layer formed after thermal diffusion from POCl3 gas. The experimental results show that in contrast to purely POCl3 furnace-diffused emitters, the saturation current density of laser-doped emitters does not increase linearly as sheet resistance decreases, but rather features two distinct regimes. In one of these regimes, the saturation current density is found to decrease as the sheet resistance decreases, reaching values lower than those of furnace emitters. This peculiar behaviour was explained by both qualitative analysis and numerical simulations.

Energy Technology Data Exchange (ETDEWEB)

In order to discuss effects of lithium iodide (LiI) doping on condensation structure of brown coals during heating, spectral changes were measured by using an in-situ FT-IR. It was found that the LiI doping accelerates weight reduction due to heating, and the doping effect is affected by coal structure. Both of Loy Yang (LY) coal and its LiI doped coal (DLY) had absorption intensity of the FT-IR spectra decreased with rising temperature, and the absorption center belonging to an OH group shows different shifts between the LY and DLY coals. This indicates that the LiI doping has affected the change in hydrogen bonding patterns associated with heating. Both of South Banko (SB) and LY coals had the absorption spectral intensity in the OH group decreased as the weight reduction (conversion) rate increased. Reduction in the OH groups associated with heating is caused by volatilization ...

International Nuclear Information System (INIS)

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 10"1"4 cm"-"2, and then annealed at temperatures ranging from 700--1,000 C in a N_2 ambient for varying durations. As P doping concentration increased from 3 x 10"1"9 to 1 x 10"2"0 cm"-"3, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

International Nuclear Information System (INIS)

Dy doped #alpha#-SiAlON ceramics prepared by the hot-pressing method show a high optical transmittance value, >70%, in the infrared region of 1.5-4.5 #mu#m. First principles calculations have been carried out to reveal the underlying transparency mechanism. It is found that the valence shell of doped Dy atoms interacts strongly with the doping states of #alpha#-SiAlON, resulting in the increase in the optical gap from 0.4 to 1.1 eV, which suppresses the photoabsorption in the wavelength region longer than 1.0 #mu#m and leads to the good transparency property. The calculated optical transmission spectra are in good agreement with the corresponding experiments.

International Nuclear Information System (INIS)

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H_2SO_4 solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is composed of both ...

International Nuclear Information System (INIS)

Fe-doped MnO2 with a hollow sea urchin-like ball chain shape was first synthesized under a high magnetic field of 10 T. The formation mechanism was investigated and discussed in detail. The synthesized samples were characterized by XRD, SEM, TEM, EMPA, and vector network analysis. By doping MnO2 with Fe, the relative complex permittivity of MnO2 and its corresponding loss tangent clearly decreases, but its relative complex permeability and its corresponding loss tangent markedly increases. Moreover, the theoretically calculated values of reflection loss show that with increasing the Fe content, the as-prepared Fe-doped MnO2 exhibits good microwave absorption capability. -- Graphical Abstract: Fe-doped MnO2 with a hollow sea urchin-like ball chain shape was first synthesized in a high magnetic field of 10 T via a simple chemical process. Display Omitted Highlights: ? Fe-doped MnO2 ...

Energy Technology Data Exchange (ETDEWEB)

The properties of Mn-doped GaAs layers grown by laser deposition were investigated with measurements of Hall effect and magneto-optical Kerr effect (MOKE). The electrical and magnetic parameters of the layers were defined by growth temperature and quantity of sputtered Mn. It was shown that room-temperature ferromagnetism is revealed by MOKE and, after ruby laser 25 ns pulse annealing, by Hall effect measurements.

International Nuclear Information System (INIS)

The doping of deuterated polyparaphenylene [C_6D_4]sub(n) with AsF_5 has been investigated by real time neutron diffractometry at 100, 400 and 820 mbar AsF_5 pressure. The reaction appears to be diffusion controlled. Evidence for one doped phase with partial crystalline order was obtained. Structural considerations suggest two polymer chains plus one dopant ''string'' as the repetitive unit. (Auth.).

British Library Electronic Table of Contents (United Kingdom)

Previously, we demonstrated that the lithium ion conduction in the perovskite-type manganese fluoride is attributed to counter cation-site vacancy mechanism. The divalent counter cation-doped KxBa(1-x)/2MnF3 was theoretically predicted as the lithium ion conductor in the perovskite-type manganese fluoride. In this study, we considered the oxygen doping for KxBa(1-x)/2MnF3 to realize the higher lithium ion conductivity. It is because lithium ion forms the stronger ionic bond with the doped oxygen anion. The hybrid-DFT calculations were performed to investigate the lithium ion conduction in the oxygen-doped KxBa(1-x)/2MnF3. The calculation results were discussed from the viewpoints of the potential energy curve, electron densities, and charge and spin densities. The effect of the lithium ion...

Energy Technology Data Exchange (ETDEWEB)

Electron paramagnetic resonance (EPR) of coals was considered by using iodine doping technique. Sub-bituminous coal (WA) and bituminous coal (UF) were used to observe EPR spectra using microwaves. With the UF coal, strength of the narrow component of the spectra was found constant regardless of amount of the doped iodine, wherein radicals without interaction with iodine were detected. Strength of the broad component increased with the iodine doping amount, where in deviation of {pi} electrons was detected, which have been generated as a result of interaction between aromatic rings and iodine in the coals. Spin concentration of the WA coal with low coalification degree is constant regardless of the iodine doping amount, and the interaction of the iodine with the aromatic rings was found small. The higher the coalification degree, the more the aromatic ring structure grows, and electron donor capability ...

Energy Technology Data Exchange (ETDEWEB)

TNF-doped Mylar is a new radiation-hard dielectric that has recently been qualified as a viable substitute for Mylar in capacitors. The advantage of TNF-doped Mylar is that it satisfies both the nuclear safety and radiation hardness requirements of weapons. Mylar is not radiation-hard. Aging and compatibility studies were carried out to insure that (1) TNF does not diffuse from the film during fabrication of the capacitor or during storage; and (2) there are no compatibility problems with aluminum foil (the conductor) or Fluorinert (the secondary dielectric). Losses of TNF were barely detectable during the vacuum bakes used in fabricating capacitors or during accelerated aging tests carried out below T{sub g} (70C) over a two year period in air. In other accelerated tests, no compatibility problems were detected with aluminum or Fluorinert. TNF-doped Mylar is now being used in the MC-4109 capacitor that was called out for ...

British Library Electronic Table of Contents (United Kingdom)

A method to achieve NMR of dilute samples in the earth's magnetic field by applying para-hydrogen induced polarization is presented. Maximum achievable polarization enhancements were calculated by numerically simulating the experiment and compared to the experimental results and to the thermal equilibrium in the earth's magnetic field. Simultaneous 19F and 1H NMR detection on a sub-milliliter sample of a fluorinated alkyne at millimolar concentration (1018 nuclear spins) was realized with just one single scan. A highly resolved spectrum with a signal/noise ratio higher than 50:1 was obtained without using an auxiliary magnet or any form of radio frequency shielding.

Science.gov (United States)

... 80 Briefs New Television Transmitter 81 Matadi Satellite Earth Station Inaugurated (Kinshasa AZAP, various dates) 82 Ramazani Marks Opening ...

Science.gov (United States)

The Asarco-Mission complex (image left) is an active producer of copper and molybdenum (important in making steel and other metal alloys), ...

Science.gov (United States)

Aug 25, 2004 ... The Tropical Rainfall Measuring Mission or TRMM satellite provided this image of Typhoon Aere over the western Philippine Sea as it was ...

International Nuclear Information System (INIS)

An oxidative precipitation reaction of rare-earth chlorides in a LiCl-KCl molten salt was successfully carried out by a lab-scale apparatus. The conversion efficiency of the used rare earth chlorides into the insoluble precipitates was increased with the sparging time and temperature and was affected on oxygen sparger type. In the conditions of 700 .deg. C molten salt temperature and above 540min sparging time, the final conversion efficiencies were over 99% for all the experimented rare-earth chlorides. The hydrodynamic characteristics of an oxygen-molten salt two phase flow system are very important for a co-oxidative precipitation of rare earth elements

Science.gov (United States)

Jan 5, 2004 ... Even if dinosaurs were cold-blooded, in the Mesozoic Era (when dinosaurs roamed the Earth), Antarctica was warm enough to have them. ...

Science.gov (United States)

... rivers of the world, the Zaire is not an efficient transportation link because of many rapids and falls to negotiate between Kinshasa and the port city of Matadi. ...

Science.gov (United States)

Apr 22, 2010 ... I believe that space exploration is not a ... plan for space exploration, especially in .... space exploration beyond low Earth orbit. ...

UK PubMed Central (United Kingdom)

The geographical arrangement of people on the surface of the earth is approximated by a mathematical equation of 361 terms. This is a convenient form for comparison with other distributions and for...Full Text Available

International Nuclear Information System (INIS)

English 2008 p. 132-133 Turkey Nishonov, Sh. Khujaev, S.

British Library Electronic Table of Contents (United Kingdom)

Earth degassing specifically of carbon dioxide CO2 is of increasing interest with respect to the global carbon budget, related climate effects, earthquake and volcano eruption mechanisms, as well as plant physiological reactions in gas-rich environments. Investigations in all of these disciplines require the detection of surface CO2 degassing structures and quantification of their emissions. We introduce minimal thermal change detection based on infrared imaging as a new remote sensing tool for the detection of earth surface thermal anomalies suiting among others to discover earth degassing locations of any origin. The method allows for seamless areal search and monitoring of degassing structures in any terrain. As proof of concept infrared imaging measurements were performed at the Bossol...

Science.gov (United States)

... Zinn, J., Hoerlin, H., and Petschek, AG, "The Motion of Bomb Debris Follow- ing the Starfish Test," Radiation Trapped in the Earth's Magnetic Field ...

Science.gov (United States)

Hie synthesis of diverse biologically important compounds, under condi- tions which existed on the earth in the initial period of its evolution, ha; ...

CERN Document Server

The abstract is additional with repect to the paper published in JGCD. Ordinary Earth satellites are usually placed into five categories of special orbits: sun-synchronous orbits, orbits at the critical inclination, frozen orbits, repeating ground track orbits, and geostationary orbits. This paper investigates their counterparts around Mars and examines the basic nature of these orbits, which are of special interest for missions conducted around Mars, including Mars reconnaissance. Mars' gravity field is much more complicated, with relatively smaller J2, compared to Earth's, which makes the behaviors of these Martian orbits different from those of Earth. Analytical formulations and numerical simulations are used to analyze these Martian orbits and compare them with their Earth counterparts. First, mean element theory is employed to describe variations of orbital elements and give the constraint ...

Science.gov (United States)

Turbine Afterword The SHARP cannon. Hydrogen is compressed in the tube on top, the gun barrel is on bottom. When Jules Verne wrote in 1865 "From Earth to the Moon" he envisioned...

International Nuclear Information System (INIS)

... gamma cascades kev range 10-100 lifetime lutetium 171 lutetium 173 lutetium

Science.gov (United States)

Deforestation in Mato Grosso, Brazil. atom_author. atom_name, Jesse Allen. atom_link. kml_href, http://earthobservatory.nasa.gov/Feeds/GoogleEarth/ ...

British Library Electronic Table of Contents (United Kingdom)

World demand for rare-earth elements and the metal yttrium?which are crucial for novel electronic equipment and green-energy technologies?is increasing rapidly. Several types of seafloor sediment harbour high concentrations of these elements. However, seafloor sediments have not been regarded as a rare-earth element and yttrium resource, because data on the spatial distribution of these deposits are insufficient. Here, we report measurements of the elemental composition of over 2,000 seafloor sediments, sampled at depth intervals of around one metre, at 78 sites that cover a large part of the Pacific Ocean. We show that deep-sea mud contains high concentrations of rare-earth elements and yttrium at numerous sites throughout the eastern South and central North Pacific. We estimate that an a...

Science.gov (United States)

switch when this cavity matching condition is determined. This results is a ... MHz offset is provided by an acousto-optic modulator. (AOM). The AOM will be shut ...

Science.gov (United States)

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

Energy Technology Data Exchange (ETDEWEB)

A theory has been developed for the mechano-catalytic water-splitting, which is the system of simultaneous H{sub 2} and O{sub 2} evolution by stirring the powder of an oxide semiconductor in pure water under the condition that the stirring rod must be kept in contact with the surface of the glass vessel. The kinetic equations and the coupling strength of the frictional energy conversion between mechanical and electrical systems are calculated . The total system composed of the formation of the dangling bonds on the glass surface, the trapping of the semiconductor particles at the microcrevice of the glass surface, the strong field inside the fine particles due to the frictional electricity, the mechanism of charge transfer from the semiconductor to the stirring rod, the hopping conduction of positive hole, the electric current density injected into water from the semiconductors, and the tunnel chemical ...

Energy Technology Data Exchange (ETDEWEB)

A comparitive analysis is made of the principal characteristics of narrow-band and conventional semiconductor light amplifiers. It is shown that quasi-distributed filtering of the spontaneous radiation ensures a high gain and a low level of the spontaneous noise at the amplifier output.

UK PubMed Central (United Kingdom)

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

Science.gov (United States)

... and technology-. The United States National Technology Roadmap for Semiconductors [ 11 still ... Moreover, higher volumes of production, better manufacturing capabilities and ... energy-efficient, reliable, high-performance, embedded (real-time), highly miniaturized, .... Optical Computing, Storage, and Communications. ...

Energy Technology Data Exchange (ETDEWEB)

Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)

British Library Electronic Table of Contents (United Kingdom)

A problem of the catalytic activity definition for metals, binary metallic alloys, and semiconductor materials is considered within new quantum mechanical and electrodynamics approach in the electron theory of catalysis. The quantitative link between the electron structure parameters of the materials and their catalytic activity on example of simple model reactions of the following type are found: H = H+ + e, O2 + e- = O2-. Copyright 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2009

International Nuclear Information System (INIS)

In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C3H8O), water (H2O) and zinc acetate (Zn(CH3CO2)2) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(?) and reflectance R(?) spectra. Conjoint optical and thermal ...

International Nuclear Information System (INIS)

Full text of publication follows: Fission neutron irradiation to steels doped with isotope boron-10 is frequently conducted to study effects of the helium production on mechanical properties. The intrinsic mechanical properties of F82H steels could have been changed due to the boron doping. Recently, we reported that co-doping with boron and nitrogen to F82H (F82H+B+N) improved the mechanical properties of F82H doped only with boron. The mechanical properties of F82H+B+N are successfully comparable with the non-doped F82H before irradiation. In order to evaluate the effects of initial microstructure and helium production on radiation hardening, F82H and F82H+B+N were irradiate d Specimens used in this study were standard F82H martensitic steels, F82H steels doped with 60 mass ppm 10B and 200 ppm N (F82H+10B+N) and F82H steels doped with 60 ...

Energy Technology Data Exchange (ETDEWEB)

Recycling of the spent rinse water discharged from the wet benches commonly used in semiconductor processing is one tactic for responding to the targets for water usage published in the 1997 National Technology Roadmap for Semiconductors (NTRS). Not only does the NTRS list a target that dramatically reduces total water usage/unit area of silicon manufactured by the industry in the future but for the years 2003 and beyond, the NTRS actually touts goals which would have semiconductor manufacturers drawing less water from a regional water supply per unit area of silicon manufactured than the quantity of ultrapure water (UPW) used in the production of that same silicon. Achieving this latter NTRS target strongly implies more widespread recycling of spent rinse waters at semiconductor manufacturing sites. In spite of the fact that, by most metrics, spent rinse waters are of much higher purity than incoming ...

International Nuclear Information System (INIS)

Lead is known to enter substitutionally in divalent state when doped in alkali halides. When irradiated at room temperature these lead centers (Pb"+"+) act as traps for electrons knocked off from the halogen ions and become Pb"+ and Pb"0 (for large doses of irradiation). These changes could be followed in the optical absorption studies. These lead-doped crystals after X-ray irradiation yield a thermoluminescence output smaller than that observed in 'pure' crystals. However, two new glow peaks are observed in additions to those due to F-centers. In KCl : Pb and Kbr : Pb crystals part of the F-center glow preceds the new glow peaks. The new peaks are attributed to the Pb"+ and Pb"0 centers. The glow peak temperatures and trap depths for these peaks an obtained by total-curve fitting method are reported. (author).

Energy Technology Data Exchange (ETDEWEB)

The influence of hydrogen ion implantation into the channel polysilicon of polysilicon thin film transistors on gate oxide conductivity has been investigated. Data for effective tunnelling barriers at the gate oxide/channel polysilicon interface are presented. A value of 1.2eV for samples with boron doped channel polysilicon is calculated. For hydrogenated boron doped samples tunnelling barriers higher than 2.1 eV are obtained. The tunnelling barriers for phosphorus doped samples are impurity concentration dependent and decrease with increasing phosphorus concentration in the range 3 x 10{sup 17} to 3 x 10{sup 19} cm{sup -3}. (Author).

British Library Electronic Table of Contents (United Kingdom)

Abstract A fabrication process for Emitter-Wrap-Through solar cells on monocrystalline material with high quality gap passivation by wet thermal silicon dioxide is investigated. Masking and structuring steps are performed by screen-printing technology. Via-holes are created by an industrially applicable high-speed laser drilling process. The cell structure features a selective emitter structure fabricated in a single high temperature step: a highly doped emitter at the via-holes and the rear side, allowing for a low via-hole resistivity as well as a low resistivity contact to screen-printed pastes, and a moderately doped front side emitter exhibiting high quantum efficiency in the low wavelength range. Therefore a novel approach is applied depositing either doped or undoped PECVD silicon d...

British Library Electronic Table of Contents (United Kingdom)

In recent years, increased attention has been focused on the use of lasers in different fabrication steps of solar cells, in particular laser doping to form emitter and/or selective emitter. In this method the laser energy is used to melt silicon, allowing the diffusion of dopant atoms to occur in the liquid phase. The main advantage of this method is the localised nature of the laser beam, which melts and diffuses a limited area without heating the bulk, therefore reducing the possible degradation associated with high temperature processes. At the University of New South Wales a novel laser doping method was developed, which combines the formation of the selective emitter with a self-aligned metallisation pattern. Despite achieving high efficiencies, concerns arose regarding the adhesion ...

British Library Electronic Table of Contents (United Kingdom)

We have investigated the effect of manganese (Mn) doping on properties of nanosized biphasic calcium phosphate powders and their dense bodies. Manganese levels of 0.6, 1.3, 1.9, 4.3, 7.0 and 11.9at.% were successfully incorporated into biphasic calcium phosphate via a sol-gel route. The prepared powders were calcined at temperatures of 500-1200^oC. The X-ray diffraction analysis revealed that a mix phase comprising of hydroxyapatite and @b-tricalcium phosphate were present, however the content of each phases in the structure was affected by the Mn content. The studies found that the largest portion of @b-tricalcium phosphate was detected at 4.3at.% Mn doping. The incorporation of Mn has also greatly increased the crystallinity of the biphasic calcium phosphate powder due to progressive den...

International Nuclear Information System (INIS)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

CERN Document Server

In this paper, we first discuss the detection of supernova neutrino on Earth. Then we propose a possible method to acquire information about $\\theta_{13}$ smaller than $1.5^\\circ$ by detecting the ratio of the event numbers of different flavor supernova neutrinos. Such an sensitivity cannot yet be achieved by the Daya Bay reactor neutrino experiment.

International Nuclear Information System (INIS)

Molar extinction coefficients for the solid solutes in aqueous solutions of some alkaline earth chlorides such as MgCl_2.6H_2O, CaCl_2, SrCl_2.6H_2O and BaCl_2.2H_2O have been determined at 81, 356, 511, 662, 1173 and 1332 keV energies in different concentration using the narrow beam transmission methods. (author)

International Nuclear Information System (INIS)

Measurement of the magnetic susceptibility of powder samples of heavy rare-earth (Tb, Dy, Ho, Er, Tm and Yb) tungstates have been reported in the temperature range 300 to 900 K. Curie-Weiss law behaviour has been observed for all samples. The Curie constant, paramagnetic Curie temperature and magneton number for the magnetic ions have also been evaluated for each material. (author).

Energy Technology Data Exchange (ETDEWEB)

Summaries of the highlights of programs in the Earth Sciences Division are presented under four headings; Geosciences, Geothermal Energy Development, Nuclear Waste Isolation, and Marine Sciences. Utilizing both basic and applied research in a wide spectrum of topics, these programs are providing results that will be of value in helping to secure the nation's energy future. Separate abstracts have been prepared for each project for inclusion in the Energy Data Base. (DMC)

Wastenet

...6 Resource type: reference data Global Change Master Directory An extensive source of information about satellite and in situ Earth science data, with broad coverage of the atmosphere, hydrosphere, oceans, solid earth, and biosphere. Author: NASA Subjects: climatology, global change, oceanographic data DeweyClass: 551.6 Resource type: documents, news International ...

International Nuclear Information System (INIS)

An electric propulsion concept suitable for delivering heavy payloads from low earth orbit (LEO) to high energy earth orbit is proposed. The system consists of a number of pulsed inductive plasma thrusters powered by a 100 kWe space nuclear power system. The pulsed plasma thruster is a relatively simple electrodeless device. It also exhibits adequate conversion to thrust power in the desired I sub sp regime of 1500 to 3000 seconds for optimal payload transfer from low earth to high earth orbit. Because of these features and the fact that the nuclear power unit will be capable of delivering sustained high power levels throughout the duration of any given mission, the system presented appears to be a very promising propulsion candidate for advanced orbital transfer vehicle (OTV) applications. An OTV, which makes use of this propulsion system and which has been designed to lift a 9000-lb payload into ...

Energy Technology Data Exchange (ETDEWEB)

In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage ('kink' effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in ...

British Library Electronic Table of Contents (United Kingdom)

We present experimental evidence for self-organization of nickel microparticles in silicon under certain thermodynamic conditions of nickel diffusion doping. The concentration and distribution of the microparticles in silicon are very uniform. Additional anneals lead to self-ordering of the impurity microparticles.

Energy Technology Data Exchange (ETDEWEB)

The Co-doped BaTiO{sub 3} nanosized powders and ceramics were prepared via the sol-gel process. The powders and ceramics were characterized by methods of XRD, SEM and TEM. The dielectric properties of the ceramics were also determined by these methods. The influence of sintering temperature, sintering time and Co concentration on the microstructure and dielectric properties was discussed. The results revealed that the powders were in nanometer scale (30-50 nm) and were mainly composed of cubic BaTiO{sub 3} phase and small amount of BaCO{sub 3}. After sintering, both the cubic BaTiO{sub 3} and BaCO{sub 3} were transformed into tetrahedron BaTiO{sub 3}. The sintering temperatures of the Co-doped BaTiO{sub 3} ceramics decreased (about 100 deg. C) and the Curie temperatures of the ceramics were then moved to lower temperature. In addition, the dielectric constant of the ceramics doping with Co was higher than that of the pure ...

Energy Technology Data Exchange (ETDEWEB)

Carbon supported catalysts can lose their activity over a period of time due to the sintering of the nanometer-sized catalyst particles. The sintering of metal clusters on carbon supports can occur due to the weak interaction between the metal and the support and also due to the corrosion of carbon, especially in fuel cell electrocatalysts. The sintering may be reduced by increasing the interaction between the metal and the support and also by increasing the corrosion resistance of carbon supports. In an effort to mitigate the growth of the nanoparticles, carbon-substituted boron defects were introduced in the carbon lattice. The interaction between the Pt nanoparticles on the pure and boron-doped carbon supports was examined using X-ray photoelectron spectroscopy (XPS). The results indicate that the interaction between the Pt nanoparticles and the boron-doped carbon support was slightly stronger than the interaction between the Pt ...

Energy Technology Data Exchange (ETDEWEB)

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

Energy Technology Data Exchange (ETDEWEB)

The doping of deuterated polyparaphenylene (C/sub 6/D/sub 4/)sub(n) with AsF/sub 5/ has been investigated by real time neutron diffractometry at 100, 400 and 820 mbar AsF/sub 5/ pressure. The reaction appears to be diffusion controlled. Evidence for one doped phase with partial crystalline order was obtained. Structural considerations suggest two polymer chains plus one dopant ''string'' as the repetitive unit.

Science.gov (United States)

We report on the single-particle properties of lanthanide-ion doped oxide nanoparticles. We have demonstrated that their size can be accurately determined from their luminosity. The optically determined size distribution is in very good agreement with the distribution obtained from transmission electron microscopy (TEM). We also showed that the photobleaching of these nanoparticles is related to a reduction process and that we can use it to sense in a concentration-dependent manner the presence of an oxidant like H2O2. Finally, we propose a way to perform nanoparticle-protein coupling and to determine the protein-nanoparticle ratio at the single-particle level.

International Nuclear Information System (INIS)

Experimental results on study of helium concentration influence on degree of molybdenum radiation hardening for various method of cyclotron doping differing in degree and damage character are presented. It is established that accumulation of helium atoms in molybdenum for simultaneous formation of radiation defects caused by low energetic primary-knocked atoms leads to higher degree of hardening than for high energetic ion irradiation. It is shown that with increase of helium atom concentration the degree of radiation hardening for the same level of damage increases. 4 refs.; 3 figs. (author).

Science.gov (United States)

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al{sub 0.5}Ga{sub 0.5}As and In{sub 0.53}Ga{sub 0.47}As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, {ital E}({Gamma}{sub 1{ital c}}) of AlP, {ital E}({ital L}{sub 1{ital c}}) of AlAs, and {ital E}({ital L}{sub 1{ital c}}) of AlSb are discussed and attributed to various experimental uncertainties. Several other ...

British Library Electronic Table of Contents (United Kingdom)

The need for alternative energy increases steadily???especially due to the climate change and the limited availability of fossil fuels. Geothermal power uses the intrinsic heat which is stored in the accessible part of the Earth???s crust. Its importance among the renewable energy resources originates from the almost unlimited energy supply of the Earth and its independence from external influences such as seasonal or even daily climatic variability. Nevertheless, there are risks which have to be assessed. From a mathematical point of view there are four building blocks of the characterization of deep geothermal systems: seismic exploration, gravimetry, modeling transport processes, and modeling the stress field. In particular, local depletion poses a significant risk during the industrial...

International Nuclear Information System (INIS)

The desire to study negative ion structure and negative ion-photon interactions has spurred the development of ion sources for use in research and industry. The many different types of negative ion sources available today differ in their characteristics and abilities to produce anions of various species. Thus the importance of choosing the correct type of negative ion source for a particular research or industrial application is clear. In this study, the results of an investigation on the production of beams composed of negatively-charged rare-earth ions from a cylindrical-cathode-geometry, cesium-sputter-type negative ion source are presented. Beams of atomic anions have been observed for most of the first-row rare-earth elements, with typical currents ranging from hundreds of picoamps to several nanoamps.

International Nuclear Information System (INIS)

A study has been made of the colour reaction involved in the interaction or rare-earth elements with the reagent orthanyl K, the optimum conditions for the reaction being: pH=4.0-4.5 and lambda=660-670 nm. The ratio of components in the complex is Me:R=1:2. Consideration of the relative optical density values of the complex solutions as a function of the serial number of the rare-earth elements made it possible to recommend orthanyl K as a selective reagent for determining La, Ce, Pr and Nb in a mixture of Tu, Yb, Lu and Y oxides. The molar extinction coefficients, the sensitivity of the reaction and the concentration limits where Beer's law applies were calculated. Lanthanum was determined in a binary mixture with thulium and yttrium. (author).

British Library Electronic Table of Contents (United Kingdom)

Spacecraft studies of the three terrestrial planets with atmospheres have made it possible to make meaningful comparisons that shed light on their common origin and divergent evolutionary paths. Early in their histories, all three apparently had oceans and extensive volcanism; Mars and Earth, at least, had magnetic fields, and Earth, at least, had life. All three currently have climates determined by energy balance relationships involving carbon dioxide, water and aerosols, regulated by solar energy deposition, atmospheric and ocean circulation, composition, and cloud physics and chemistry. This paper addresses the extent to which current knowledge allows us to explain the observed state of each planet, its planetology, climatology and biology, within a common framework. Areas of ignorance...

Energy Technology Data Exchange (ETDEWEB)

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

International Nuclear Information System (INIS)

In a vacuum insulator, the narrow electron beam emitted from the cathode impinges on the anode and raises its temperature and also may produce high thermal stress. This high thermal stress, in conjuction with the surface electrostatic pressure may rupture the surface and detach particles from it. In this thesis, the interaction of high energy electron and laser beams with metals and semiconductors is investigated. The differential equations governing the physical processes involved in the interaction are solved by the finite element method. Effects of beam penetration into the material, variable beam reflectance at the surface, finite beam size and dependence of material properties on temperature are accounted for. The two-phase moving boundary problem, also known as the Stefan problem, is solved by an enthalpy formulation of the heat equation. Material deformation by thermal stresses caused by high temperature gradients and electrostatic forces induced by space ...

Energy Technology Data Exchange (ETDEWEB)

A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and ...

Science.gov (United States)

Wildlife Monitoring System Schematic .......................... 40 ...... sentinel species - healthy fish are placed in an environment of water (where they arc not .... The way ir! which data for the fnre mdor study groups will be gathered tor managciacilt ...... Earth Resources Aircraft Program (ERAP) Camera ...

Science.gov (United States)

In this activity, students create two- and three-dimensional maps by using a data grid of an imaginary section of Earth's surface. They are challenged to create six different maps of various surface features and answer questions about them.

Science.gov (United States)

Oct 2, 2007 ... The Payload combines some of the most sensitive particle sensors .... provide state-of-the-art measurements of incoming x-ray, ultraviolet, .... It will be launched into a low-Earth orbit on a Delta 7320 rocket in September 2004. ...

Science.gov (United States)

As the presence of humans in space expands in scope and duration, the quality of life in space as well as on Earth becomes pertinent. .... Military uses of space, such as the introduction of space-based laser or particle beam weapons, may have a major impact on the way people think and relate to .... AIAA Student Journal. ...

International Nuclear Information System (INIS)

Russian 1980. p. 81. USSR Blokh, Ya.L. Dorman, LI Yanke, VG Khamirzov,

Energy Technology Data Exchange (ETDEWEB)

A procedure was developed to monitor boundaries within which secondary mining operations can be applied. Principal techniques include instrument and operative-remote observations of earth shifts and aerial photography of displacements on the surface of the trough.

Science.gov (United States)

ISS022, E, 8269, CHILE, OPEN PIT MINING OPERATIONS E. OF SIERRA GORDA, ROADS, DRAINAGE, -22.9, -69.1, 20091209. ISS022, E, 8270, CHILE, OPEN PIT MINING ...

Science.gov (United States)

5 days ago... Sun sensors, 2 secondary Sun sensors, and an Earth sensor. ... This continued intermittently until the rocket burn, at which time ... with incoming asymptotic direction at an angle of -13.6 degrees from the lunar equator. ...

Science.gov (United States)

Recent proposals have shown that a quantum degenerate gas of alkaline earth atoms can be used for a number of novel quantum computing and quantum simulation experiments. Strontium is a good candidate for such experiments because it can be controlled with high precision, as demonstrated in recent atomic clock experiments. Unfortunately, the small scattering length of strontium is not amenable to evaporative cooling techniques that are used to reach quantum degeneracy. Furthermore, increasing the scattering length of alkaline earths with a magnetic Feshbach resonance is not possible due to their spinless electronic ground state configuration. However, recent theoretical and experimental work suggests the possibility of changing scattering lengths in alkaline earths with laser light. Using this optical Feshbach resonance near strontium's narrow ^1S0->^3P1 intercombination transition might allow its scattering length to be ...

Science.gov (United States)

Federated Search (openSearch) (C. Lynnes); Infusion Process (S. Olding) Metrics Planning & Reporting (R. Ramapriyan); Service & Event Casting (B. Wilson) ...

UK PubMed Central (United Kingdom)

In 18 months the Canadian Medical Discoveries Fund (CMDF) has attracted investments worth $180 million to spend on biotechnology and medical research. Although eight initial investments totalled only...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

An introduction to time-of-flight neutron spectroscopy is presented in the context of the study of magnetic materials. Examples are taken from the class of rare earth and actinide magnetic materials known as `strongly correlated electron` systems. (author) 11 figs., 24 refs.

Science.gov (United States)

Features: CHUQUICAMATA, LARGE OPEN PIT MINING OPERATIONS, ROADS, HILLS Center Point Latitude: -22.3 Center Point Longitude: -68.9 (Negative numbers indicate ...

Science.gov (United States)

It was thus actually the fourth stage of the rocket assembly. ... package, and several temperature sensors - was mounted in the cross-lattice frame. ... Earth's geomagnetic field and incoming charged particles from the Sun and extra-solar space. ...

Science.gov (United States)

... say for sure if the signal is coming from hail, lots of graupel, or some other hydrometeor . ... Precipitation forms when cloud droplets or ice particles in clouds grow and .... A landslide is the movement of rock, debris, or earth down a slope. ...

Wastenet

... 03, 2001 | Rate It Lake Superior Streams http://www.lakesuperiorstreams.org/ (1 vote) interactively examine real-time water quality data from 5 ...north shore Lake Superior trout streams and learn about other streams in the region, how they \\

Wastenet

...October 2006 - present: University of Leeds, UK PhD Candidate in Geochemistry Thesis Title: Magnetite formation in reducing natural environments Supervisors: Dr Liane G. Benning ...Germany Bachelor of Science in Geosciences and Astrophysics Project Details Project Title: \\

UK PubMed Central (United Kingdom)

BackgroundDengue fever is a mosquito-borne illness that places significant burden on tropical developing countries with unplanned urbanization. A surveillance system using Google...Full Text Available

UK PubMed Central (United Kingdom)

Investigations of psychrotrophic microorganisms have been limited even though the dominant environment of the Earth is cold and enzymes with high activities at low temperatures could have commercial...Full Text Available

Science.gov (United States)

ISS022, E, 8260, CHILE, CHUQUICAMATA, LARGE OPEN PIT MINING OPERATIONS, ROADS, HILLS, -22.3, -68.9, 20091209. ISS022, E, 8261, CHILE, CHUQUICAMATA, ...

Science.gov (United States)

Sep 9, 2009 ... You are here: GES DISC Home Geomorphology from Space By Location Landforms by Location: Asia. Info. Landforms by Location: Asia. KEY, ASIA ...

Science.gov (United States)

An ascending node occurs when the subsatellite point crosses the earth's equator going from .... 11dB sigma-naught. This error budget includes the altimeter noise, ...... it is also recommended to filter the data as follows to ...

Science.gov (United States)

...Pneumatic-tired earth-moving haulage equipment (trucks, scrapers, tractors...Pneumatic-Tired Earthmoving Haulage Equipment. An employer may, of course...pneumatic-tired earthmoving haulage equipment, is suspended pending...

Science.gov (United States)

The growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.

International Nuclear Information System (INIS)

Surface energy of III-V semiconductors ended by (110) clean surface and surface covered by atomic monolayer of aluminium, copper and sulfur has been calculated. We have used the Greens-function technique based on the scheme of linear muffin-tin orbitals in the atomic sphere approximation (LMTO-ASA) for the crystal potential and width the local density approximation (LDA) for electrons. Two types of coverage are considered: full monolayer with two additional atoms per two-dimensional unit cell and half monolayer with one additional atom per unit cell. Full monolayer of metallic atoms increases the surface energy. Cu atoms lead to greater destabilization than Al atoms. Sulfur atoms stabilize (110) surface for all considered compounds. (author)

CERN Document Server

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and gamma-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and ...

Science.gov (United States)

The excess energy of several III-V and II-VI strained-layer semiconductor superlattices ({ital AC}){sub {ital p}}(BC){sub p} is studied as a function of the repeat period {ital p} and orientation {bold G}=(001), (110), (111), and (201), using first-principles calculations. We discover a number of universal features, including the predicted instability for nearly all {ital p}'s and {bold G}'s with respect to {ital bulk} disproportionation, the identification of chalcopyrite as a metastable ordered structure, and the stability of all thin {ital epitaxial} (110) and (201) and most common-anion (001) superlattices relative to coherent phase separation.

British Library Electronic Table of Contents (United Kingdom)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

Energy Technology Data Exchange (ETDEWEB)

The mass and charge distributions in an unseparated mix of fission product nuclei from thermal-neutron fission of /sup 242m/Am were studied through semiconductor gamma-ray spectrometry. Samples of the fissionable material under study were irradiated in a vertical irradiation tube of the MIFI IRT research reactor. Following irradiation, measurements were made on aperture-calibrated semiconductor detectors. For broader identification of fission fragment nuclides three experiments were conducted that differed substantially in irradiation duration. The spectrum of gamma radiation from the mix of fission products and the time dependences of count rate at total absorption peaks were analyzed on SM-4 and Iskra-226 computers. The values of yields obtained were compared with data of investigations conducted earlier with other experimental methods, and also with the results of calculations.

International Nuclear Information System (INIS)

The radionuclide X-ray fluorescence analyzer consists of a source changer and a sample changer. "5"5Fe, "1"0"9Cd and "2"4"1Am are used as excitation sources. The radiation is detected with a semiconductor Si(Li) detector. The complete assembly of the apparatus consists of an imagine unit, a keyboard, a floppy disc drive, a printer, a console and a rack with analog and digital electronics. Its multichannel amplitude analyzer consists of power supplies, a high voltage supply, a linear amplifier, an analog-to-digital converter and a computer. The technical specifications are given. The control and data processing system is controlled with an MHB 8080A microprocessor. Software for semiconductor gamma spectrometry and for quantitative gamma spectrometry will be supplied with the equipment. (E.S.). 3 figs., 4 refs.

International Nuclear Information System (INIS)

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

Energy Technology Data Exchange (ETDEWEB)

The trend toward smaller dimensions in integrated circuit technology presents severe physical and engineering challenges for ion implantation. These challenges, together with the need for physically-based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in silicon. Recently the DOE Council on Materials requested that our panel examine the current status and future research opportunities in the area of ion beams in semiconductor processing. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. These topics were explored both from the perspective of emerging science issues and technology challenges.

International Nuclear Information System (INIS)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir_3Si_5 is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru_2Si_3, Os_2Si_3, and OsSi_2.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

International Nuclear Information System (INIS)

The energy deposited by the passage of a single, energetic, heavy-ion through a semiconductor produces dense electron-hole (eh) pair concentrations near the ion trajectory. The size, shape, and charge density of an ion track represent critical parameters for many models of single event phenomena. The authors describe the design and uses of possible semiconductor test structures for measuring the initial radial distribution of charge and subsequent charge transport in a high energy, heavy-ion track. Numerical simulations show how the test structure can resolve different radial distributions of charge within an ion track. The test structure simulations also show the importance of accurately representing ion track structure in single event effects simulations.

Energy Technology Data Exchange (ETDEWEB)

One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.