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Sample records for dilute magnetic semiconductors

  1. Specific heat in diluted magnetic semiconductor quantum ring

    Science.gov (United States)

    Babanlı, A. M.; Ibragimov, B. G.

    2017-11-01

    In the present paper, we have calculated the specific heat and magnetization of a quantum ring of a diluted magnetic semiconductor (DMS) material in the presence of magnetic field. We take into account the effect of Rashba spin-orbital interaction, the exchange interaction and the Zeeman term on the specific heat. We have calculated the energy spectrum of the electrons in diluted magnetic semiconductor quantum ring. Moreover we have calculated the specific heat dependency on the magnetic field and Mn concentration at finite temperature of a diluted magnetic semiconductor quantum ring.

  2. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  3. Magnetic properties of diluted magnetic semiconductors

    NARCIS (Netherlands)

    Jonge, de W.J.M.; Swagten, H.J.M.

    1991-01-01

    A review will be given of the magnetic characteristics of diluted magnetic semiconductors and the relation with the driving exchange mechanisms. II–VI as well as IV–VI compounds will be considered. The relevance of the long-range interaction and the role of the carrier concentration will be

  4. Introduction to the Physics of Diluted Magnetic Semiconductors

    CERN Document Server

    Gaj, Jan A

    2010-01-01

    The book deals with diluted magnetic semiconductors, a class of materials important to the emerging field of spintronics. In these materials semiconducting properties, both transport and optical, are influenced by the presence of magnetic ions. It concentrates on basic physical mechanisms (e.g. carrier-ion and ion-ion interactions) and resulting phenomena (e.g. magnetic polaron formation and spin relaxation). Introduction to the Physics of Diluted Magnetic Semiconductors is addressed to graduate-level and doctoral students and young researchers entering the field. The authors have been actively involved in the creation of this branch of semiconductor physics.

  5. EDITORIAL: Focus on Dilute Magnetic Semiconductors FOCUS ON DILUTE MAGNETIC SEMICONDUCTORS

    Science.gov (United States)

    Chambers, Scott A.; Gallagher, Bryan

    2008-05-01

    This focus issue of New Journal of Physics is devoted to the materials science of dilute magnetic semiconductors (DMS). A DMS is traditionally defined as a diamagnetic semiconductor doped with a few to several atomic per cent of some transition metal with unpaired d electrons. Several kinds of dopant-dopant interactions can in principle couple the dopant spins leading to a ferromagnetic ground state in a dilute magnetic system. These include superexchange, which occurs principally in oxides and only between dopants with one intervening oxygen, and double exchange, in which dopants of different formal charges exchange an electron. In both of these mechanisms, the ferromagnetic alignment is not critically dependent on free carriers in the host semiconductor because exchange occurs via bonds. A third mechanism, discovered in the last few years, involves electrons associated with lattice defects that can apparently couple dopant spins. This mechanism is not well understood. Finally, the most desirable mechanism is carrier-mediated exchange interaction in which the dopant spins are coupled by itinerant electrons or holes in the host semiconductor. This mechanism introduces a fundamental link between magnetic and electrical transport properties and offers the possibility of new spintronic functionalities. In particular electrical gate control of ferromagnetism and the use of spin polarized currents to carry signals for analog and digital applications. The spin light emitting diode is a prototypical device of this kind that has been extensively used to characterize the extent of spin polarization in the active light emitting semiconductor heterostructure. The prototypical carrier mediated ferromagnetic DMS is Mn-doped GaAs. This and closely related narrow gap III-V materials have been very extensively studied. Their properties are generally quite well understood and they have led to important insights into fundamental properties of ferromagnetic systems with strong spin

  6. Ultrafast magnetization dynamics in diluted magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Morandi, O [INRIA Nancy Grand-Est and Institut de Recherche en Mathematiques Avancees, 7 rue Rene Descartes, F-67084 Strasbourg (France); Hervieux, P-A; Manfredi, G [Institut de Physique et Chimie des Materiaux de Strasbourg, 23 rue du Loess, F-67037 Strasbourg (France)], E-mail: morandi@dipmat.univpm.it

    2009-07-15

    We present a dynamical model that successfully explains the observed time evolution of the magnetization in diluted magnetic semiconductor quantum wells after weak laser excitation. Based on the pseudo-fermion formalism and a second-order many-particle expansion of the exact p-d exchange interaction, our approach goes beyond the usual mean-field approximation. It includes both the sub-picosecond demagnetization dynamics and the slower relaxation processes that restore the initial ferromagnetic order in a nanosecond timescale. In agreement with experimental results, our numerical simulations show that, depending on the value of the initial lattice temperature, a subsequent enhancement of the total magnetization may be observed within the timescale of a few hundred picoseconds.

  7. Structural, morphological and magnetic analysis of Cd–Co–S dilute magnetic semiconductor nanofilms

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Suresh [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh 173234 (India); Negi, N.S. [Department of Physics, Himachal Pradesh University, Summer Hill, Shimla, Himachal Pradesh 171005 (India); Katyal, S.C. [Department of Physics, Jaypee Institute of Information Technology, Sec-128, Noida, Uttar Pradesh 201301 (India); Sharma, Pankaj, E-mail: pankaj.sharma@juit.ac.in [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh 173234 (India); Sharma, Vineet [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh 173234 (India)

    2014-10-01

    Cd{sub 1−x}Co{sub x}S dilute magnetic semiconductor nanofilms (0≤x≤0.08 at%) deposited by chemical bath deposition have been investigated using grazing angle x-ray diffraction, atomic force microscopy and vibrating sample magnetometer. The introduction of Co{sup 2+} ions in CdS structure induces structural disorders and hence, results in degradation of crystallinity. The crystallite size, interplanar spacing and lattice parameter ratio decrease with increasing Co{sup 2+} concentration in CdS. The diamagnetic state of CdS disappears with increase in Co concentration and films with x>0.02 exhibit ferromagnetism. This may be explained in terms of the spin–orbit interactions and Co{sup 2+} ion induced the lattice defects and phase separation. - Highlights: • Cd{sub 1−x}Co{sub x}S dilute magnetic semiconductor nanofilms (0≤x≤0.08 at%) deposited by CBD. • The diamagnetic state of CdS vanishes for x=0.02. • For x>0.02, dilute magnetic semiconductor nanofilms shows a ferromagnetic state.

  8. Entanglement and Zeeman interaction in diluted magnetic semiconductor quantum dot

    International Nuclear Information System (INIS)

    Hichri, A.; Jaziri, S.

    2004-01-01

    We present theoretically the Zeeman coupling and exchange-induced swap action in spin-based quantum dot quantum computer models in the presence of magnetic field. We study the valence and conduction band states in a double quantum dots made in diluted magnetic semiconductor. The latter have been proven to be very useful in building an all-semiconductor platform for spintronics. Due to a strong p-d exchange interaction in diluted magnetic semiconductor (Cd 0.57 Mn 0.43 Te), the relative contribution of this component is strongly affected by an external magnetic field, a feature that is absent in nonmagnetic double quantum dots. We determine the energy spectrum as a function of magnetic field within the Hund-Mulliken molecular-orbit approach and by including the Coulomb interaction. Since we show that the ground state of the two carriers confined in a vertically coupled quantum dots provide a possible realization for a gate of a quantum computer, the crossing between the lowest states, caused by the giant spin splitting, can be observed as a pronounced jump in the magnetization of small magnetic field amplitude. Finally, we determine the swap time as a function of magnetic field and the inter dot distance. We estimate quantitatively swap errors caused by the field, establishing that error correction would, in principle, be possible in the presence of nonuniform magnetic field in realistic structures

  9. Mössbauer Studies of dilute Magnetic Semiconductors

    CERN Multimedia

    Gislason, H P; Debernardi, A; Dlamini, W B

    2002-01-01

    The recent discovery of (dilute) magnetic semiconductors with wide band gaps, e.g. GaN, ZnO and other oxides, having Curie temperatures, T$_{\\textrm{c}}$, well above room temperature, has prompted extraordinary experimental and theoretical efforts to understand, control and exploit this unexpected finding not least in view of the obvious potential of such materials for the fabrication of "spin-(elec)tronic" or magneto-optic devices. Ferromagnetism (FM) was achieved mostly by doping with dilute 3d transition metal impurities, notably Mn, Fe, and Co (in \\% concentrations), during growth or by subsequent ion implantation. However, it is fair to state that experimentally the conditions for the occurrence of ferro-, antiferro- or paramagnetism with these impurities are not yet controlled as generally at least two conflicting forms of magnetism or none have been reported for each system - albeit often produced by different techniques. Theory is challenged as "conventional" models seem to fail and no generally accep...

  10. Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems

    KAUST Repository

    Cheng, Yingchun

    2013-03-05

    Using first-principles calculations, we propose a two-dimensional diluted magnetic semiconductor: monolayer MoS2 doped by transition metals. Doping of transition metal atoms from the IIIB to VIB groups results in nonmagnetic states, since the number of valence electrons is smaller or equal to that of Mo. Doping of atoms from the VIIB to IIB groups becomes energetically less and less favorable. Magnetism is observed for Mn, Fe, Co, Zn, Cd, and Hg doping, while for the other dopants from these groups it is suppressed by Jahn-Teller distortions. Analysis of the binding energies and magnetic properties indicates that (Mo,X)S2 (X=Mn, Fe, Co, and Zn) are promising systems to explore two-dimensional diluted magnetic semiconductors.

  11. Structure and magnetism of transition-metal implanted dilute magnetic semiconductors

    CERN Document Server

    Pereira, Lino; Temst, K; Araújo, JP; Wahl, U

    The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a critical step towards the development of semiconductor-based spintronics. Among the many types of DMS materials which have been investigated, the current research interest can be narrowed down to two main classes of materials: (1) narrow-gap III-V semiconductors, mostly GaAs and InAs, doped with Mn; (2) wide-gap oxides and nitrides doped with 3d transition metals, mostly Mn- and Co-doped ZnO and Mn-doped GaN. With a number of interesting functionalities deriving from the carrier-mediated ferromagnetism and demonstrated in various proof-of-concept devices, Mn-doped GaAs has become, among DMS materials, one of the best candidates for technological application. However, despite major developments over the last 15 years, the maximum Curie temperature (185 K) remains well below room temperature. On the other hand, wide-gap DMS materials appear to exhibit ferromagnetic behavior...

  12. Time-resolved optically-detected magnetic resonance of II-VI diluted-magnetic-semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, V.Yu.; Karczewski, G. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Godlewski, M. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Dept. Mathem. and Natural Sci. College of Sci., Card. S. Wyszynski Univ., Warsaw (Poland); Yakovlev, D.R. [Experimental Physics 2, University of Dortmund, 44221 Dortmund (Germany); A. F. Ioffe Physico-Technical Institute, 194017 St. Petersburg (Russian Federation); Ryabchenko, S.M. [Institute of Physics NAS Ukraine, 03028 Kiev (Ukraine); Waag, A. [Institute of Semiconductor Technology, Braunschweig Technical University, 38106 Braunschweig (Germany)

    2007-01-15

    Time-resolved optically-detected magnetic resonance (ODMR) technique was used to study spin dynamics of Mn{sup 2+} ions in (Zn,Mn)Se- and (Cd,Mn)Te-based diluted magnetic semiconductor quantum wells. Times of spin-lattice relaxation have been measured directly from a dynamical shift of exciton luminescence lines after a pulsed impact of 60 GHz microwave radiation. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Scanning Hall probe microscopy of a diluted magnetic semiconductor

    International Nuclear Information System (INIS)

    Kweon, Seongsoo; Samarth, Nitin; Lozanne, Alex de

    2009-01-01

    We have measured the micromagnetic properties of a diluted magnetic semiconductor as a function of temperature and applied field with a scanning Hall probe microscope built in our laboratory. The design philosophy for this microscope and some details are described. The samples analyzed in this work are Ga 0.94 Mn 0.06 As films grown by molecular beam epitaxy. We find that the magnetic domains are 2-4 μm wide and fairly stable with temperature. Magnetic clusters are observed above T C , which we ascribe to MnAs defects too small and sparse to be detected by a superconducting quantum interference device magnetometer.

  14. Scanning Hall probe microscopy of a diluted magnetic semiconductor

    Science.gov (United States)

    Kweon, Seongsoo; Samarth, Nitin; de Lozanne, Alex

    2009-05-01

    We have measured the micromagnetic properties of a diluted magnetic semiconductor as a function of temperature and applied field with a scanning Hall probe microscope built in our laboratory. The design philosophy for this microscope and some details are described. The samples analyzed in this work are Ga0.94Mn0.06As films grown by molecular beam epitaxy. We find that the magnetic domains are 2-4 μm wide and fairly stable with temperature. Magnetic clusters are observed above TC, which we ascribe to MnAs defects too small and sparse to be detected by a superconducting quantum interference device magnetometer.

  15. Hall effect driven by non-collinear magnetic polarons in diluted magnetic semiconductors

    Science.gov (United States)

    Denisov, K. S.; Averkiev, N. S.

    2018-04-01

    In this letter, we develop the theory of Hall effect driven by non-collinear magnetic textures (topological Hall effect—THE) in diluted magnetic semiconductors (DMSs). We show that a carrier spin-orbit interaction induces a chiral magnetic ordering inside a bound magnetic polaron (BMP). The inner structure of non-collinear BMP is controlled by the type of spin-orbit coupling, allowing us to create skyrmion- (Rashba) or antiskyrmion-like (Dresselhaus) configurations. The asymmetric scattering of itinerant carriers on polarons leads to the Hall response which exists in weak external magnetic fields and at low temperatures. We point out that DMS-based systems allow one to investigate experimentally the dependence of THE both on a carrier spin polarization and on a non-collinear magnetic texture shape.

  16. Correlation between electronic and magnetic properties in the IV–VI group diluted magnetic semiconductor SnMnTe

    NARCIS (Netherlands)

    Eltink, S.J.E.A.; Swagten, H.J.M.; Stoffels, N.M.J.; Jonge, de W.J.M.

    1990-01-01

    The diluted magnetic semiconductor Sn1-xMnxTe exhibits a critical carrier density above which ferromagnetic interactions are dominant. On the basis of preliminary experiments on the low temperature magnetic phases no clear evidence for re-entrant behavior can be submitted.

  17. Tailoring spin-orbit torque in diluted magnetic semiconductors

    KAUST Repository

    Li, Hang; Wang, Xuhui; Doǧan, Fatih; Manchon, Aurelien

    2013-01-01

    We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.

  18. Tailoring spin-orbit torque in diluted magnetic semiconductors

    KAUST Repository

    Li, Hang

    2013-05-16

    We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists between the angular dependence of the torque and the anisotropy of the Fermi surface; (2) the spin orbit torque depends nonlinearly on the exchange coupling. Our findings suggest the possibility to tailor the spin orbit torque magnitude and angular dependence by structural design.

  19. Quest for high-Curie temperature MnxGe1-x diluted magnetic semiconductors for room-temperature spintronics applications

    Science.gov (United States)

    Nie, Tianxiao; Tang, Jianshi; Wang, Kang L.

    2015-09-01

    In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1-x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.

  20. Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems

    KAUST Repository

    Cheng, Yingchun; Guo, Z. B.; Mi, W. B.; Schwingenschlö gl, Udo; Zhu, Zhiyong

    2013-01-01

    Using first-principles calculations, we propose a two-dimensional diluted magnetic semiconductor: monolayer MoS2 doped by transition metals. Doping of transition metal atoms from the IIIB to VIB groups results in nonmagnetic states, since the number

  1. Domain walls in (Ga,Mn)As diluted magnetic semiconductor

    Czech Academy of Sciences Publication Activity Database

    Sugawara, A.; Kasai, H.; Tonomura, A.; Brown, P.D.; Campion, R. P.; Edmonds, K. W.; Gallagher, B. L.; Zemen, Jan; Jungwirth, Tomáš

    2008-01-01

    Roč. 100, č. 4 (2008), 047202/1-047202/4 ISSN 0031-9007 R&D Projects: GA MŠk LC510; GA ČR GEFON/06/E002; GA ČR GA202/05/0575; GA ČR GA202/04/1519 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : dilute ferromagnetic semiconductor * Néel domain walls * electron holography * Landau-Lifshitz-Gilbert simulation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

  2. Mn-AlInN: a new diluted magnetic semiconductor

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar; Sharif, Rehana; Zhu, J.J.

    2009-01-01

    Mn ions have been incorporated into MOCVD grown Al 1-x In x N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at ∝260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T c above room temperature is assumed to be associated to the layer having higher Mn concentration. (orig.)

  3. Li(Zn,Co,MnAs: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

    Directory of Open Access Journals (Sweden)

    Bijuan Chen

    2016-11-01

    Full Text Available We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMnyAs with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,MnAs. No ferromagnetic order occurs with single (Zn,Co or (Zn, Mn substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ∼40 K. The maximum saturation moment of the this system reached to 2.17μB/Mn, which is comparable to that of Li (Zn,MnAs. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in “111” LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,MnAs, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

  4. Tunable spin waves in diluted magnetic semiconductor nanoribbon

    Science.gov (United States)

    Lyu, Pin; Zhang, Jun-Yi

    2018-01-01

    The spin wave excitation spectrum in diluted magnetic semiconductor (DMS) nanoribbons was calculated by taking account of the quantum confinement effect of carriers and spin waves. By introducing the boundary condition for the spin waves, we derived the spin wave dispersion using the path-integral formulation and Green's function method. It was shown that the spin wave excitation spectrum is discrete due to the confinement effect and strongly dependent on the carrier density, the magnetic ion density, and the width of the nanoribbon. When the width of the nanoribbon is beyond the typical nanoscales, the size effect on the excitation energies of the spin waves disappears in our calculation, which is in qualitative agreement with no obvious size effect observed in the as-made nanodevices of (Ga,Mn)As in this size regime. Our results provide a potential way to control the spin waves in the DMS nanoribbon not only by the carrier density and the magnetic ion density but also by the nanostructure geometry.

  5. Mn-AlInN: a new diluted magnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul; Ali, Akbar [Quaid-i-Azam University, Advance Materials Physics Laboratory, Physics Department, Islamabad (Pakistan); Sharif, Rehana [University of Engineering and Technology, Department of Physics, Lahore (Pakistan); Zhu, J.J. [Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Beijing (China)

    2009-09-15

    Mn ions have been incorporated into MOCVD grown Al{sub 1-x}In{sub x}N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at {proportional_to}260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T{sub c} above room temperature is assumed to be associated to the layer having higher Mn concentration. (orig.)

  6. Hole-hole correlation effects on magnetic properties of Mn.sub.x./sub.III.sub.1-x./sub.V diluted magnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Byounghak, L.; MacDonald, A. H.

    2001-01-01

    Roč. 10, - (2001), s. 153-156 ISSN 1386-9477 Institutional research plan: CEZ:AV0Z1010914 Keywords : diluted magnetic semiconductors * ferromagnetism * electronic correlation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.009, year: 2001

  7. Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Chen Bi-Juan; Deng Zheng; Wang Xian-Cheng; Feng Shao-Min; Yuan Zhen; Zhang Si-Jia; Liu Qing-Qing; Jin Chang-Qing

    2016-01-01

    The layered semiconductor BaFZnAs with the tetragonal ZrCuSiAs-type structure has been successfully synthesized. Both the in-situ high-pressure synchrotron x-ray diffraction and the high-pressure Raman scattering measurements demonstrate that the structure of BaFZnAs is stable under pressure up to 17.5 GPa at room temperature. The resistivity and the magnetic susceptibility data show that BaFZnAs is a non-magnetic semiconductor. BaFZnAs is recommended as a candidate of the host material of diluted magnetic semiconductor. (special topic)

  8. InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors. Growth and properties

    Energy Technology Data Exchange (ETDEWEB)

    Tran, Lien

    2011-04-13

    This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In{sub 1-x}Mn{sub x}Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 {mu}m, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm{sup 2}/V s Vs with associated electron concentration of 2.9.10{sup 6} cm{sup -3} at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm{sup 2}/V s measured at 300 K, with an associated carrier concentration of 2.6.10{sup 1}6 cm{sup -3} is found for the best sample that was grown at 340 C with a 0.06 {mu}m-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In{sub 1-x}Mn{sub x}Sb/GaAs (001) is prepared by adding a few percent of Mn into the

  9. Ferromagnetic clusters induced by a nonmagnetic random disorder in diluted magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bui, Dinh-Hoi [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam); Physics Department, Hue University’s College of Education, 34 Le Loi, Hue (Viet Nam); Phan, Van-Nham, E-mail: phanvannham@dtu.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

    2016-12-15

    In this work, we analyze the nonmagnetic random disorder leading to a formation of ferromagnetic clusters in diluted magnetic semiconductors. The nonmagnetic random disorder arises from randomness in the host lattice. Including the disorder to the Kondo lattice model with random distribution of magnetic dopants, the ferromagnetic–paramagnetic transition in the system is investigated in the framework of dynamical mean-field theory. At a certain low temperature one finds a fraction of ferromagnetic sites transiting to the paramagnetic state. Enlarging the nonmagnetic random disorder strength, the paramagnetic regimes expand resulting in the formation of the ferromagnetic clusters.

  10. Ab-initio calculations of Co-based diluted magnetic semiconductors Cd 1-xCoxX (X=S, Se, Te)

    KAUST Repository

    Saeed, Yasir; Nazir, Safdar; Shaukat, Ali; Reshak, A. H.

    2010-01-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic semiconductors composed of IIVI compounds Cd1-xCoxX (X=S, Se, Te) at x=0.25. From the calculated results

  11. Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

    Science.gov (United States)

    Craco, L.; Laad, M. S.; Müller-Hartmann, E.

    2003-12-01

    Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

  12. Ab-initio calculations for dilute magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Belhadji, Brahim

    2008-03-03

    This thesis focusses on ab-initio calculations for the electronic structure and the magnetic properties of dilute magnetic semiconductors (DMS). In particular we aim at the understanding of the complex exchange interactions in these systems. Our calculations are based on density functional theory, being ideally suited for a description of the material specific properties of the considered DMS. Moreover we use the KKR Green function method in connection with the coherent potential approximation (CPA), which allows to include the random substitutional disorder in a mean field-like approximation for the electronic structure. Finally we calculate the exchange coupling constants J{sub ij} between two impurities in a CPA medium by using the Lichtenstein formula and from this calculate the Curie temperature by a numerically exact Monte Carlo method. Based on this analysis we found and investigated four different exchange mechanisms being of importance in DMS systems: Double exchange, p-d exchange, antiferromagnetic superexchanges, and ferromagnetic superexchange. A second topic we have investigated in this thesis is the pressure dependence of the exchange interactions and the Curie temperatures in (Ga,Mn)As and (In,Mn)As, using the LDA and the LDA+U approximations. Exact calculations of T{sub C} by Monte Carlo simulations show a somehow different behavior. (orig.)

  13. Low temperature anomaly of light stimulated magnetization and heat capacity of the 1D diluted magnetic semiconductors

    Science.gov (United States)

    Geffe, Chernet Amente

    2018-03-01

    This article reports magnetization and specific heat capacity anomalies in one dimensional diluted magnetic semiconductors observed at very low temperatures. Based on quantum field theory double time temperature dependent Green function technique is employed to evaluate magnon dispersion and the time correlation function. It is understood that magnon-photon coupling and magnetic impurity concentration controls both, such that near absolute temperature magnetization is nearly zero and abruptly increase to saturation level with decreasing magnon-photon coupling strength. We also found out dropping of magnetic specific heat capacity as a result of increase in magnetic impurity concentration x, perhaps because of inter-band disorder that would suppress the enhancement of density of spin waves.

  14. Low temperature anomaly of light stimulated magnetization and heat capacity of the 1D diluted magnetic semiconductors

    Directory of Open Access Journals (Sweden)

    Chernet Amente Geffe

    2018-03-01

    Full Text Available This article reports magnetization and specific heat capacity anomalies in one dimensional diluted magnetic semiconductors observed at very low temperatures. Based on quantum field theory double time temperature dependent Green function technique is employed to evaluate magnon dispersion and the time correlation function. It is understood that magnon-photon coupling and magnetic impurity concentration controls both, such that near absolute temperature magnetization is nearly zero and abruptly increase to saturation level with decreasing magnon-photon coupling strength. We also found out dropping of magnetic specific heat capacity as a result of increase in magnetic impurity concentration x, perhaps because of inter-band disorder that would suppress the enhancement of density of spin waves.

  15. Spin and energy transfer between magnetic ions and free carriers in diluted-magnetic semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Yakovlev, D.R. [Experimental Physics 2, University of Dortmund, 44227 Dortmund (Germany); Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Kneip, M.; Bayer, M. [Experimental Physics 2, University of Dortmund, 44227 Dortmund (Germany); Maksimov, A.A.; Tartakovskii, I.I. [Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka (Russian Federation); Keller, D.; Ossau, W.; Molenkamp, L.W. [Physikalisches Institut der Universitaet Wuerzburg, 97074 Wuerzburg (Germany); Scherbakov, A.V.; Akimov, A.V. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Waag, A. [Abteilung Halbleiterphysik, Universitaet Ulm, 89081 Ulm (Germany)

    2004-03-01

    In this paper we give a brief overview of our studies on dynamical processes in diluted-magnetic-semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te. Presence of free carriers is an important factor which determines the energy- and spin transfer in a coupled systems of magnetic ions, lattice (the phonon system) and carriers. We report also new data on dynamical response of magnetic ions interacting with photogenerated electron-hole plasma. (Zn,Mn)Se/(Zn,Be)Se structures with relatively high Mn content of 11% provide spin-lattice relaxation time of about 20 ns, which is considerably shorter then the characteristic times of nonequilibrium phonons ranging to 1 {mu}s. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Spin polarization and magnetization of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states

    International Nuclear Information System (INIS)

    Simserides, Constantinos

    2005-01-01

    We study the magnetization, M, and the spin polarization, ζ, of n-doped non-magnetic-semiconductor (NMS)/narrow to wide dilute-magnetic-semiconductor (DMS)/n-doped NMS quantum wells, as a function of the temperature, T, and the in-plane magnetic field, B. Under such conditions the density of states (DOS) deviates from the occasionally stereotypic step-like form, both quantitatively and qualitatively. The DOS modification causes an impressive fluctuation of M in cases of vigorous competition between spatial and magnetic confinement. At low T, the enhanced electron spin-splitting, U oσ , acquires its bigger value. At higher T, U oσ decreases, augmenting the influence of the spin-up electrons. Increasing B, U oσ increases and accordingly electrons populate spin-down subbands while they abandon spin-up subbands. Furthermore, due to the DOS modification, all energetically higher subbands become gradually depopulated

  17. The origin of magnetism in anatase Co-doped TiO2 magnetic semiconductors

    NARCIS (Netherlands)

    Lee, Y.J.

    2010-01-01

    Dilute magnetic semiconductors (DMS) can be tailored by doping a small amount of elements containing a magnetic moment into host semiconductors, which leads to a new class of semiconductors with the functionality of tunable magnetic properties. Recently, oxide semiconductors have attained interests

  18. Ferromagnetism in diluted magnetic semiconductors: A comparision between AB INITIO mean-field, RPA, and Monte Carlo treatments

    Czech Academy of Sciences Publication Activity Database

    Bouzerar, G.; Kudrnovský, Josef; Bergqist, L.; Bruno, P.

    2003-01-01

    Roč. 68, č. 8 (2003), s. 081203-1 - 081203-4 ISSN 0163-1829 R&D Projects: GA AV ČR IAA1010203 Grant - others:RTN(XX) HPRN-CT-2000-00143 Institutional research plan: CEZ:AV0Z1010914 Keywords : Curie temperature * diluted magnetic semiconductors * mean-field * RPA * Monte-Carlo Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  19. Collective spin fluctuations in diluted magnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    König, J.; Schliemann, J.; Jungwirth, Tomáš; MacDonald, A. H.

    2002-01-01

    Roč. 12, - (2002), s. 379-382 ISSN 1386-9477 Institutional research plan: CEZ:AV0Z1010914 Keywords : spin fluctuation * magnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.107, year: 2002

  20. Nonequilibrium spin transport through a diluted magnetic semiconductor quantum dot system with noncollinear magnetization

    International Nuclear Information System (INIS)

    Ma, Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Gee

    2013-01-01

    The spin-dependent transport through a diluted magnetic semiconductor quantum dot (QD) which is coupled via magnetic tunnel junctions to two ferromagnetic leads is studied theoretically. A noncollinear system is considered, where the QD is magnetized at an arbitrary angle with respect to the leads’ magnetization. The tunneling current is calculated in the coherent regime via the Keldysh nonequilibrium Green’s function (NEGF) formalism, incorporating the electron–electron interaction in the QD. We provide the first analytical solution for the Green’s function of the noncollinear DMS quantum dot system, solved via the equation of motion method under Hartree–Fock approximation. The transport characteristics (charge and spin currents, and tunnel magnetoresistance (TMR)) are evaluated for different voltage regimes. The interplay between spin-dependent tunneling and single-charge effects results in three distinct voltage regimes in the spin and charge current characteristics. The voltage range in which the QD is singly occupied corresponds to the maximum spin current and greatest sensitivity of the spin current to the QD magnetization orientation. The QD device also shows transport features suitable for sensor applications, i.e., a large charge current coupled with a high TMR ratio. - Highlights: ► The spin polarized transport through a diluted magnetic quantum dot is studied. ► The model is based on the Green’s function and the equation of motion method.► The charge and spin currents and tunnel magnetoresistance (TMR) are investigated. ► The system is suitable for current-induced spin-transfer torque application. ► A large tunneling current and a high TMR are possible for sensor application.

  1. Spin diffusion in the Mn2+ ion system of II-VI diluted magnetic semiconductor heterostructures

    Science.gov (United States)

    Maksimov, A. A.; Yakovlev, D. R.; Debus, J.; Tartakovskii, I. I.; Waag, A.; Karczewski, G.; Wojtowicz, T.; Kossut, J.; Bayer, M.

    2010-07-01

    The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te were studied optically and simulated numerically. In samples with inhomogeneous magnetic ion distribution, these dynamics are contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. A spin-diffusion coefficient of 7×10-8cm2/s was evaluated for Zn0.99Mn0.01Se from comparison of experiment and theory. Calculations of the exciton giant Zeeman splitting and the magnetization dynamics in ordered alloys and digitally grown parabolic quantum wells show perfect agreement with the experimental data. In both structure types, spin diffusion contributes essentially to the magnetization dynamics.

  2. First-principles theory of dilute magnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Sato, K.; Bergqvist, L.; Kudrnovský, Josef; Dederichs, P. H.; Eriksson, O.; Turek, Ilja; Sanyal, B.; Bouzerar, G.; Katayama-Yoshida, H.; Dinh, V. A.; Fukushima, T.; Kizaki, H.; Zeller, R.

    2010-01-01

    Roč. 82, č. 2 (2010), s. 1633-1690 ISSN 0034-6861 R&D Projects: GA AV ČR IAA100100616; GA ČR GA202/07/0456 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z20410507 Keywords : magnetic semiconductors * electronic structure * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 51.695, year: 2010

  3. Self-consistent electronic structure of spin-polarized dilute magnetic semiconductor quantum wells

    International Nuclear Information System (INIS)

    Hong, S. P.; Yi, K. S.; Quinn, J. J.

    2000-01-01

    The electronic properties of spin-symmetry-broken dilute magnetic semiconductor quantum wells are investigated self-consistently at zero temperature. The spin-split subband structure and carrier concentration of modulation-doped quantum wells are examined in the presence of a strong magnetic field. The effects of exchange and correlations of electrons are included in a local-spin-density-functional approximation. We demonstrate that exchange correlation of electrons decreases the spin-split subband energy but enhances the carrier density in a spin-polarized quantum well. We also observe that as the magnetic field increases, the concentration of spin-down (majority) electrons increases but that of spin-up (minority) electrons decreases. The effect of orbital quantization on the in-plane motion of electrons is also examined and shows a sawtoothlike variation in subband electron concentrations as the magnetic-field intensity increases. The latter variation is attributed to the presence of ionized donors acting as the electron reservoir, which is partially responsible for the formation of the integer quantum Hall plateaus. (c) 2000 The American Physical Society

  4. Phase diagrams and switching of voltage and magnetic field in dilute magnetic semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Escobedo, R. [Departamento de Matematica Aplicada y Ciencias de la Computacion, Universidad de Cantabria, 39005 Santander (Spain); Carretero, M.; Bonilla, L.L. [G. Millan Institute, Fluid Dynamics, Nanoscience and Industrial Maths., Universidad Carlos III de Madrid, 28911 Leganes (Spain); Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain); Platero, G. [Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain)

    2010-04-15

    The response of an n-doped dc voltage biased II-VI multi-quantum well dilute magnetic semiconductor nanostructure having its first well doped with magnetic (Mn) impurities is analyzed by sweeping wide ranges of both the voltage and the Zeeman level splitting induced by an external magnetic field. The level splitting versus voltage phase diagram shows regions of stable self-sustained current oscillations immersed in a region of stable stationary states. Transitions between stationary states and self-sustained current oscillations are systematically analyzed by both voltage and level splitting abrupt switching. Sudden voltage or/and magnetic field changes may switch on current oscillations from an initial stationary state, and reciprocally, current oscillations may disappear after sudden changes of voltage or/and magnetic field changes into the stable stationary states region. The results show how to design such a device to operate as a spin injector and a spin oscillator by tuning the Zeeman splitting (through the applied external magnetic field), the applied voltage and the sample configuration parameters (doping density, barrier and well widths, etc.) to select the desired stationary or oscillatory behavior. Phase diagram of Zeeman level splitting {delta} vs. dimensionless applied voltage {phi} for N = 10 QWs. White region: stable stationary states; black: stable self-sustained current oscillations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. InSb semiconductors and (In,Mn)Sb diluted magnetic semiconductors: Growth and properties

    International Nuclear Information System (INIS)

    Tran, Lien

    2011-01-01

    This dissertation describes investigations of the growth by molecular beam epitaxy and the characterization of the semiconductor InSb as well as the diluted magnetic semiconductor (DMS) In 1-x Mn x Sb. The InSb films were grown on GaAs (001) substrate and Si (001) offcut by 4 toward (110) substrate up to a thickness of about 2 μm, in spite of a large lattice mismatch between the epi-layer and substrate (14.6% between InSb and GaAs, and 19.3% between InSb and Si). After optimizing the growth conditions, the best InSb films grown directly on GaAs without any special technique results in a high crystal quality, low noise, and an electron mobility of 41100 cm 2 /V s Vs with associated electron concentration of 2.9.10 6 cm -3 at 300 K. Such structures could be used, for example, for infrared detector structures. The growth of InSb on Si, however, is a challenge. In order to successfully grow InSb on Si, tilted substrates and the insertion of buffer layers were used, which helps to reduce the lattice mismatch as well as the formation of defects, and hence to improve the crystal quality. An electron mobility of 24000 cm 2 /V s measured at 300 K, with an associated carrier concentration of 2.6.10 1 6 cm -3 is found for the best sample that was grown at 340 C with a 0.06 μm-thick GaSb/AlSb superlattice buffer layer. The smaller value of electron mobility (compared to the best GaAsbased sample) is related to a higher density of microtwins and stacking faults as well as threading dislocations in the near-interface region as shown by transmission electron microscopy. Deep level noise spectra indicate the existence of deep levels in both GaAs and Si-based samples. The samples grown on Si exhibit the lowest Hooge factor at 300 K, lower than the samples grown on GaAs. Taking the optimized growth conditions of InSb/GaAs, the diluted magnetic semiconductor In 1-x Mn x Sb/GaAs (001) is prepared by adding a few percent of Mn into the host material InSb during growth. I have

  6. Pump-probe spectroscopy of spin-injection dynamics in double quantum wells of diluted magnetic semiconductor

    International Nuclear Information System (INIS)

    Nishibayashi, K.; Aoshima, I.; Souma, I.; Murayama, A.; Oka, Y.

    2006-01-01

    Dynamics of spin injection has been investigated in a double quantum well (DQW) composed of a diluted magnetic semiconductor by the pump-probe transient absorption spectroscopy in magnetic field. The DQW consists of a non-magnetic well (NMW) of CdTe and a magnetic well (MW) of Cd 0.92 Mn 0.08 Te. The MW shows a transient absorption saturation in the exciton band for more than 200 ps after the optical pumping, while the exciton photoluminescence does not arise from the MW. In the NMW, the circular polarization degree of the transient absorption saturation shows an increase with increasing time. The results are interpreted by the individual tunneling of spin-polarized electrons and holes from the MW to the NMW with different tunneling times. Depolarization processes of the carrier spins in the MW and the NMW are also discussed

  7. Ferromagnetism in diluted magnetic semiconductor heterojunction systems

    Czech Academy of Sciences Publication Activity Database

    Lee, B.; Jungwirth, Tomáš; MacDonald, A. H.

    2002-01-01

    Roč. 17, - (2002), s. 393-403 ISSN 0268-1242 R&D Projects: GA ČR GA202/98/0085; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * heterostructures Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.241, year: 2002

  8. Transition-metal-doped group-IV monochalcogenides: a combination of two-dimensional triferroics and diluted magnetic semiconductors

    Science.gov (United States)

    Yang, Liu; Wu, Menghao; Yao, Kailun

    2018-05-01

    We report the first-principles evidence of a series of two-dimensional triferroics (ferromagnetic + ferroelectric + ferroelastic), which can be obtained by doping transition-metal ions in group-IV monochalcogenide (SnS, SnSe, GeS, GeSe) monolayers, noting that a ferromagnetic Fe-doped SnS2 monolayer has recently been realized (Li B et al 2017 Nat. Commun. 8 1958). The ferroelectricity, ferroelasticity and ferromagnetism can be coupled and the magnetization direction may be switched upon ferroelectric/ferroelastic switching, rendering electrical writing + magnetic reading possible. They can be also two-dimensional half-metals or diluted magnetic semiconductors, where p/n channels or even multiferroic tunneling junctions can be designed by variation in doping and incorporated into a monolayer wafer.

  9. Holistic electronic response underlying the development of magnetism in co-doped diluted magnetic semiconductors

    Science.gov (United States)

    Andriotis, Antonis N.; Menon, Madhu

    2018-05-01

    A systematic analysis of the properties of codoped diluted magnetic semiconductors (DMSs) reveals the role and the effect of the codopants in dictating the magnetic features of the DMSs. Our results indicate that the magnetic features of a codoped DMS is the outcome of synergistic electronic processes of the whole system rather than a local hybridization process isolated from the rest of the system. Specifically, the d-orbital hybridization of the (co)dopants and the introduction of their impurity bands lead to the readjustment of the position of the p-band center of the host’s anions and that of the valence band maximum (VBM). The overall effect of these is to pull the hybridized d-bands of the (co)dopants relative to the Fermi energy, E F , which in turn dictate the value of the magnetic moment of both the dopant as well as the codopant. More precisely, the magnetic moment of a dopant shows an almost linearly increasing (decreasing) variation as the dopant’s d-band center (the latter dictated by the codopant) moves away from (gets closer to) E F . Our results thus suggest a completely new approach in the investigation and understanding of the origin of the defect induced magnetism and support previous reports suggesting the Fermi-energy engineering as a mean for developing high T C DMSs. These trends are demonstrated with results obtained for GaN, GaP, and CdS doped with one of the V, Mn, Co and Cu dopants and codoped with the transition metals of the 3d-series.

  10. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  11. Novel aspects of diluted and digital magnetic heterostructures

    International Nuclear Information System (INIS)

    Bonanni, A.

    1999-04-01

    In the present work novel aspects of diluted and digital II-VI-based heterostructures containing Mn ions are investigated. All the structures under study were fabricated by means of molecular beam epitaxy. Digital magnetic heterostructures have been prepared by incorporating discrete (sub)monolayers of the purely magnetic semiconductor MnTe into otherwise non magnetic CdTe quantum wells embedded in CdMgTe barriers. Formation and binding energy of magnetic polarons have been investigated in these structures and compared with the diluted case. Reflectance difference spectroscopy (RDS) performed ex-situ allowed to distinguish between signals due to the crystal anisotropy solely and those induced by the presence a magnetic elements. The problem of p-type doping of bulk diluted magnetic semiconductors II-VI-based is tackled. During and upon growth of ZnMnTe highly doped with N, in-situ RDS was carried out in order to investigate intra-ion transitions within the half filled 3d shell of Mn. Transport measurements and magnetometry at low temperature were performed to study, on the tracks of recent theoretical works, the influence of free carriers on the interaction between magnetic ions. As expected, indications of ferromagnetic ordering were found for the DMS with the highest concentration of carriers. Special attention was given to the formation of Mn islands on a II-VI substrate and to their change in morphology upon overgrowth with a mismatched material. A rich zoology of regularly shaped nanostructures could be produced. (author)

  12. Cd{sub 0.9375}Mn{sub 0.0625}S diluted magnetic semiconductor: A DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Rani, Anita [Guru Nanak College for Girls, Sri Muktsar Sahib, Punjab (India); Kaur, Kulwinder; Kumar, Ranjan, E-mail: ranianita64@gmail.com [Department of Physics, Punjab University, Chandigarh-160014 (India)

    2015-08-28

    We studied the spin polarized electronic band structures and magnetic properties of the diluted magnetic semiconductor Cd{sub 1-x}Mn{sub x}S in Zinc Blende phase (B3) with 0.0625 Mn by using ab initio method. The calculations were performed by using Density Functional Theory as implemented in the Spanish Initiative for Electronic Simulations with Thousands of Atoms code using local density approximation (LDA). Calculated electronic band structures and magnetic properties of Cd{sub 1-x}Mn{sub x}S are discussed in terms of contribution of Mn 3d{sup 5} 4s{sup 2}, Cd 4d{sup 10} 5s{sup 2}, S 3s{sup 2} 3p{sup 4} orbitals. The total magnetic moment is found to be 5.00 µb for Cd{sub 1−x}Mn{sub x}S at x=0.0625. This value indicate that Mn atom adds no hole carrier to the perfect CdS crystal. We found that Mn doped systems are ferromagnetic. Calculated results are in good agreement with previous studies.

  13. Universal features underlying the magnetism in diluted magnetic semiconductors

    Science.gov (United States)

    Andriotis, Antonis N.; Menon, Madhu

    2018-04-01

    Investigation of a diverse variety of wide band gap semiconductors and metal oxides that exhibit magnetism on substitutional doping has revealed the existence of universal features that relate the magnetic moment of the dopant to a number of physical properties inherent to the dopants and the hosts. The investigated materials consist of ZnO, GaN, GaP, TiO2, SnO2, Sn3N4, MoS2, ZnS and CdS doped with 3d-transition metal atoms. The primary physical properties contributing to magnetism include the orbital hybridization and charge distribution, the d-band filling, d-band center, crystal field splitting, electron pairing energy and electronegativity. These features specify the strength of the spin-polarization induced by the dopants on their first nearest neighboring anions which in turn specify the long range magnetic coupling among the dopants through successively induced spin polarizations (SSP) on neighboring dopants. The proposed local SSP process for the establishment of the magnetic coupling among the TM-dopants appears as a competitor to other classical processes (superexchange, double exchange, etc). Furthermore, these properties can be used as a set of descriptors suitable for developing statistical predictive theories for a much larger class of magnetic materials.

  14. Universal features underlying the magnetism in diluted magnetic semiconductors.

    Science.gov (United States)

    Andriotis, Antonis N; Menon, Madhu

    2018-04-04

    Investigation of a diverse variety of wide band gap semiconductors and metal oxides that exhibit magnetism on substitutional doping has revealed the existence of universal features that relate the magnetic moment of the dopant to a number of physical properties inherent to the dopants and the hosts. The investigated materials consist of ZnO, GaN, GaP, TiO 2 , SnO 2 , Sn 3 N 4 , MoS 2 , ZnS and CdS doped with 3d-transition metal atoms. The primary physical properties contributing to magnetism include the orbital hybridization and charge distribution, the d-band filling, d-band center, crystal field splitting, electron pairing energy and electronegativity. These features specify the strength of the spin-polarization induced by the dopants on their first nearest neighboring anions which in turn specify the long range magnetic coupling among the dopants through successively induced spin polarizations (SSP) on neighboring dopants. The proposed local SSP process for the establishment of the magnetic coupling among the TM-dopants appears as a competitor to other classical processes (superexchange, double exchange, etc). Furthermore, these properties can be used as a set of descriptors suitable for developing statistical predictive theories for a much larger class of magnetic materials.

  15. Dilute Magnetic Semiconductor Cu2FeSnS4 Nanocrystals with a Novel Zincblende Structure

    Directory of Open Access Journals (Sweden)

    Xiaolu Liang

    2012-01-01

    Full Text Available Diluted magnetic semiconductor Cu2FeSnS4 nanocrystals with a novel zincblende structure have been successfully synthesized by a hot-injection approach. Cu+, Fe2+, and Sn4+ ions occupy the same position in the zincblende unit cell, and their occupancy possibilities are 1/2, 1/4, and 1/4, respectively. The nanocrystals were characterized by means of X-ray diffraction (XRD, transmission electron microscopy (TEM, selected area electron diffraction (SAED, energy-dispersive spectroscopy (EDS, and UV-vis-NIR absorption spectroscopy. The nanocrystals have an average size of 7.5 nm and a band gap of 1.1 eV and show a weak ferromagnetic behavior at low temperature.

  16. Synthesis and characterization of Mn-doped ZnO diluted magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Abdel-Galil, A. [Solid State Physics and Accelerators Department, NCRRT, Atomic Energy Authority, Cairo (Egypt); Balboul, M.R., E-mail: m_balboul@yahoo.com [Solid State Physics and Accelerators Department, NCRRT, Atomic Energy Authority, Cairo (Egypt); Sharaf, A. [Radiation Engineering Department, NCRRT, Atomic Energy Authority, Cairo (Egypt)

    2015-11-15

    In the present work undoped and Mn doped ZnO nanoparticles (ZnO:Mn), diluted magnetic semiconductors, were successfully synthesized by the sol–gel method at room temperature. The morphology of ZnO nanoparticles constituted by flower-like structures with hexagonal morphologies that changed significantly after the incorporation of Mn. Rietveld refinements results showed that Mn ions are successfully doped into ZnO matrix without altering its wurtzite phase. Meanwhile, Raman spectroscopy analyses confirm the wurtzite structure of undoped ZnO and ZnO:Mn nanoparticles. The lattice parameters increase with increasing Mn content due to the large ionic radius of Mn{sup 2+} compared to that of Zn{sup 2+}. Electron spin resonance measurements were performed to gain information about oxidation state and site occupancy of the magnetic Mn ions in the ZnO lattice. Moreover, UV–vis absorption spectra have been utilized to calculate the optical band gap of the undoped ZnO and ZnO:Mn nanoparticles before and after different γ-irradiation doses. The band gap of ZnO:Mn (2%) is 2.62 eV which is noticeably smaller than the 3.26 eV of undoped ZnO. The thermal decomposition properties of the prepared nanoparticle samples were also studied using simultaneous Thermogravimetric analysis in temperature range from 30 to 500 °C.

  17. Charge and Spin Transport in Dilute Magnetic Semiconductors. Final report

    International Nuclear Information System (INIS)

    Ullrich, Carsten A.

    2009-01-01

    This proposal to the DOE outlines a three-year plan of research in theoretical and computational condensed-matter physics, with the aim of developing a microscopic theory for charge and spin dynamics in disordered materials with magnetic impurities. Important representatives of this class of materials are the dilute magnetic semiconductors (DMS), which have attracted great attention as a promising basis for spintronics devices. There is an intense experimental effort underway to study the transport properties of ferromagnetic DMS such as (Ga,Mn)As, and a number of interesting features have emerged: negative magnetoresistance, anomalous Hall effect, non-Drude dynamical conductivity, and resistivity maxima at the Curie temperature. Available theories have been able to account for some of these features, but at present we are still far away from a systematic microscopic understanding of transport in DMS. We propose to address this challenge by developing a theory of charge and spin dynamics based on a combination of the memory-function formalism and time-dependent density functional theory. This approach will be capable of dealing with two important issues: (a) the strong degree of correlated disorder in DMS, close to the localization transition (which invalidates the usual relaxation-time approximation to the Boltzmann equation), (b) the essentially unknown role of dynamical many-body effects such as spin Coulomb drag. We will calculate static and dynamical conductivities in DMS as functions of magnetic order and carrier density, which will advance our understanding of recent transport and infrared absorption measurements. Furthermore, we will study collective plasmon excitations in DMS (3D, 2D and quantum wells), whose linewidths could constitute a new experimental probe of the correlation of disorder, many-body effects and charge and spin dynamics in these materials.

  18. A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors

    International Nuclear Information System (INIS)

    Pietrzyk, M.A.; Kowalski, B.J.; Orlowski, B.A.; Knoff, W.; Story, T.; Dobrowolski, W.; Slynko, V.E.; Slynko, E.I.; Johnson, R.L.

    2010-01-01

    In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV. (authors)

  19. Effective equations for the precession dynamics of electron spins and electron–impurity correlations in diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Cygorek, M; Axt, V M

    2015-01-01

    Starting from a quantum kinetic theory for the spin dynamics in diluted magnetic semiconductors, we derive simplified equations that effectively describe the spin transfer between carriers and magnetic impurities for an arbitrary initial impurity magnetization. Taking the Markov limit of these effective equations, we obtain good quantitative agreement with the full quantum kinetic theory for the spin dynamics in bulk systems at high magnetic doping. In contrast, the standard rate description where the carrier–dopant interaction is treated according to Fermi’s golden rule, which involves the assumption of a short memory as well as a perturbative argument, has been shown previously to fail if the impurity magnetization is non-zero. The Markov limit of the effective equations is derived, assuming only a short memory, while higher order terms are still accounted for. These higher order terms represent the precession of the carrier–dopant correlations in the effective magnetic field due to the impurity spins. Numerical calculations show that the Markov limit of our effective equations reproduces the results of the full quantum kinetic theory very well. Furthermore, this limit allows for analytical solutions and for a physically transparent interpretation. (paper)

  20. Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

    International Nuclear Information System (INIS)

    Zhao, Qian; Xiong, Zhihua; Luo, Lan; Sun, Zhenhui; Qin, Zhenzhen; Chen, Lanli; Wu, Ning

    2017-01-01

    Highlights: • It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. • Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. • While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. • These results provide a feasible approach for the fabrication of 2D DMS based GaN ML. - Abstract: To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic–antiferromagnetic transformation occurs under compressive strain of −9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

  1. Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Qian [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Xiong, Zhihua, E-mail: xiong_zhihua@126.com [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Luo, Lan [School of Materials Science and Engineering, Nanchang University, Nanchang 330031 (China); Sun, Zhenhui [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China); Qin, Zhenzhen [College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071 (China); Chen, Lanli [Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Wu, Ning [Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330038 (China)

    2017-02-28

    Highlights: • It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. • Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. • While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. • These results provide a feasible approach for the fabrication of 2D DMS based GaN ML. - Abstract: To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn doping due to double-exchange mechanism. Interestingly, the ferromagnetic coupling in Mn-doped GaN monolayer is enhanced with tensile strain and weakened with compressive strain. What is more, the ferromagnetic–antiferromagnetic transformation occurs under compressive strain of −9.5%. These results provide a feasible approach for fabrication of a new GaN monolayer based diluted magnetic semiconductor.

  2. Hubbard U calculations for gap states in dilute magnetic semiconductors.

    Science.gov (United States)

    Fukushima, T; Katayama-Yoshida, H; Sato, K; Bihlmayer, G; Mavropoulos, P; Bauer, D S G; Zeller, R; Dederichs, P H

    2014-07-09

    On the basis of constrained density functional theory, we present ab initio calculations for the Hubbard U parameter of transition metal impurities in dilute magnetic semiconductors, choosing Mn in GaN as an example. The calculations are performed by two methods: (i) the Korringa-Kohn-Rostoker (KKR) Green function method for a single Mn impurity in GaN and (ii) the full-potential linearized augmented plane-wave (FLAPW) method for a large supercell of GaN with a single Mn impurity in each cell. By changing the occupancy of the majority t2 gap state of Mn, we determine the U parameter either from the total energy differences E(N + 1) and E(N - 1) of the (N ± 1)-electron excited states with respect to the ground state energy E(N), or by using the single-particle energies for n(0) ± 1/2 occupancies around the charge-neutral occupancy n0 (Janak's transition state model). The two methods give nearly identical results. Moreover the values calculated by the supercell method agree quite well with the Green function values. We point out an important difference between the 'global' U parameter calculated using Janak's theorem and the 'local' U of the Hubbard model.

  3. Neutron scattering studies of a dilute magnetic semiconductor: Cd1-xMnxTe

    DEFF Research Database (Denmark)

    Steigenberger, Ursula; Lebech, Bente; Galazka, Robert R.

    1986-01-01

    The development of the magnetic ordering in the magnetic semiconductor Cd1-xMnxTe was investigated by elastic neutron scattering. A detailed study of the correlation length and the intensity as a function of temperature, direction in reciprocal space and concentration of the magnetic ions has been...

  4. On exceeding the solubility limit of Cr+3 dopants in SnO2 nanoparticles based dilute magnetic semiconductors

    Science.gov (United States)

    URS, Kusuma; Bhat, S. V.; Kamble, Vinayak

    2018-04-01

    The paper investigates the magnetic behavior of chromium doped SnO2 Dilute Magnetic Semiconductor (DMS) nanoparticles, through structural, spectroscopic, and magnetic studies. A non-equilibrium solution combustion method is adopted to synthesize 0-5 at. % Cr doped SnO2 nanoparticles. The detailed spectroscopic studies on the system using micro-Raman spectroscopy, x-ray photoelectron spectroscopy, and electron paramagnetic resonance spectroscopy along with the structural analysis confirm the presence of Cr in 3+ oxidation state, which substitutes at Sn4+ site in SnO6 octahedra of the rutile structure. This doping is found to enhance the defects in the system, i.e., oxygen vacancies. All the synthesized SnO2 nanoparticles (with or without dopants) are found to exhibit Room Temperature Ferromagnetism (RTFM). This occurrence of RTFM is attributed to the magnetic exchange interaction through F-centers of oxygen vacancies as well as dopant magnetic impurities and explained through the Bound Magnetic Polaron (BMP) model of DMS systems. Nonetheless, as the doping of Cr is further increased beyond 2%, the solubility limit is achieved. This antiferromagnetic exchange interaction from interstitial Cr dopants dominates over the BMP mechanism and, hence, leads to the decrease in the net magnetic moment drastically.

  5. Growth and XRD analysis of the diluted magnetic semiconductor Zn{sub 1-x}Ni{sub x}O

    Energy Technology Data Exchange (ETDEWEB)

    Syed Ali, K.S. [Department of Science, Estill High School, Post Office Box 754, Estill, South Carolina - 29918 (United States); Saravanan, R. [Department of Physics, The Madura College, Madurai - 625 011 (India); Acikgoez, M. [Bahcesehir University, Faculty of Arts and Sciences, Besiktas - 34349 (Turkey)

    2011-01-15

    Diluted magnetic semiconductor compound Zn{sub 1-x}Ni{sub x} O(x =0.01, 0.02, 0.03, 0.04 and 0.05) was prepared by sol-gel method and characterized using powder XRD for the distribution of electrons and bonding in the unit cell. The electronic structural studies of this material were carried out by maximum entropy method (MEM) for the quantitative and qualitative measurement on the inclusion and the effect induced on bonding by Ni doping. The spatial arrangement of charge and the bonding behavior of this material were analyzed from 3D, 2D and 1D density distributions. The evidence for the addition of Ni in the host lattice of Zn is realized. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Ab-initio calculations of Co-based diluted magnetic semiconductors Cd 1-xCoxX (X=S, Se, Te)

    KAUST Repository

    Saeed, Yasir

    2010-10-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic semiconductors composed of IIVI compounds Cd1-xCoxX (X=S, Se, Te) at x=0.25. From the calculated results of band structure and density of states, the half-metallic character and stability of ferromagnetic state for Cd1-xCoxS, Cd1-xCoxSe and Cd 1-xCoxTe alloys are determined. It is found that the tetrahedral crystal field gives rise to triple degeneracy t2g and double degeneracy eg. Furthermore, we predict the values of spin-exchange splitting energies Δx(d) and Δ x(p-d) and exchange constants N0α and N 0β produced by the Co 3d states. Calculated total magnetic moments and the robustness of half-metallicity of Cd1-xCo xX (X=S, Se, Te) with respect to the variation in lattice parameters are also discussed. We also extend our calculations to x=0.50, 0.75 for S compounds in order to observe the change due to increase in Co. © 2010 Elsevier B.V.

  7. Room temperature ferromagnetism in magic-sized Cr-doped CdS diluted magnetic semiconducting quantum dots

    International Nuclear Information System (INIS)

    Srivastava, Punita; Kumar, Pushpendra; Singh, Kedar

    2011-01-01

    Manipulation of carrier spins in semiconductors for spintronics applications has received great attention driven by improved functionalities and higher speed operation. Doping of semiconductor nanocrystals by transition-metal ions pronounced as diluted magnetic semiconductors (DMS) has attracted tremendous attention. Such doping is, however, difficult to achieve in low-dimensional strongly quantum-confined nanostructures by conventional growth procedures. In the present case, magic-sized, pure, and Cr-doped CdS DM-QDs have been synthesized by solution phase chemistry (lyothermal method). Structural, optical, and magnetic investigation suggest an intrinsic nature of ferromagnetism with highly quantum-confined system. Optical and magnetic results of pure and doped QDs reveal major physical consequences of dopant localization within the capacity to engineer dopant-carrier exchange interactions introducing magnetic functionalities within the host semiconductor lattice. Unpaired Cr ions in Cd substitutional sites could create spin ordering and ferromagnetic coupling. The results presented herein illustrate some of the remarkable and unexpected complexities that can arise in doped QDs.

  8. Experimentally evaluating the origin of dilute magnetism in nanomaterials

    International Nuclear Information System (INIS)

    Pereira, L M C

    2017-01-01

    Reports of room-temperature ferromagnetism continue to emerge for an ever-growing range of nanomaterials with a small or even vanishing concentration of magnetic atoms. Dilute magnetic semiconductors (DMS) are the most representative class of such materials, but similar magnetic properties have been reported in many others. Challenging our understanding of magnetic order in solids, as well as our ability to experimentally assess it, these remarkable magnetic phenomena have become one of the most controversial topics in magnetism. Various non-intrinsic sources of ferromagnetism (e.g. instrumental artifacts and magnetic contamination) are becoming well documented, and rarely are all of them taken into account when room-temperature ferromagnetism is reported. This topical review is intended to serve as a guide when evaluating to what extent a given data set supports the claim of intrinsic ferromagnetism in dilute nanomaterials. It compiles the most relevant sources of non-intrinsic ferromagnetism which have been reported, as well as guidelines for how to minimize them. It also provides an overview of complementary structural and magnetic characterization techniques which can be combined to provide different levels of scrutiny of the intrinsic nature of experimentally observed ferromagnetism. In particular, it gives some notable examples of how comprehensive studies based on those techniques have led to a remarkably detailed understanding of model DMS materials, with strong evidence of absence of room-temperature ferromagnetism. Although mostly based on DMS research, this review provides a set of guidelines and cautionary notes of broader relevance, including some emerging new fields of dilute nanomagnetism such as magnetically doped 3D topological insulators, 3D Dirac semimetals, and 2D materials. (topical review)

  9. Experimentally evaluating the origin of dilute magnetism in nanomaterials

    Science.gov (United States)

    Pereira, L. M. C.

    2017-10-01

    Reports of room-temperature ferromagnetism continue to emerge for an ever-growing range of nanomaterials with a small or even vanishing concentration of magnetic atoms. Dilute magnetic semiconductors (DMS) are the most representative class of such materials, but similar magnetic properties have been reported in many others. Challenging our understanding of magnetic order in solids, as well as our ability to experimentally assess it, these remarkable magnetic phenomena have become one of the most controversial topics in magnetism. Various non-intrinsic sources of ferromagnetism (e.g. instrumental artifacts and magnetic contamination) are becoming well documented, and rarely are all of them taken into account when room-temperature ferromagnetism is reported. This topical review is intended to serve as a guide when evaluating to what extent a given data set supports the claim of intrinsic ferromagnetism in dilute nanomaterials. It compiles the most relevant sources of non-intrinsic ferromagnetism which have been reported, as well as guidelines for how to minimize them. It also provides an overview of complementary structural and magnetic characterization techniques which can be combined to provide different levels of scrutiny of the intrinsic nature of experimentally observed ferromagnetism. In particular, it gives some notable examples of how comprehensive studies based on those techniques have led to a remarkably detailed understanding of model DMS materials, with strong evidence of absence of room-temperature ferromagnetism. Although mostly based on DMS research, this review provides a set of guidelines and cautionary notes of broader relevance, including some emerging new fields of dilute nanomagnetism such as magnetically doped 3D topological insulators, 3D Dirac semimetals, and 2D materials.

  10. Structural and magnetic investigation of dilute magnetic semiconductors based on GaN and ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Kammermeier, Tom

    2010-01-19

    The two wide band gap dilute magnetic semiconductors (DMS) Gd:GaN and Co:ZnO are among the most favored materials for spintronic applications. Despite intense research efforts during the last years, the origin of the magnetic order is still under debate. This work reports structural and magnetic investigations on these DMS materials employing several complementary techniques. The X-ray linear dichroism (XLD) has been used to gain element-specific insight into the local structure of dopants and cations. X-ray diffraction (XRD) was used to probe the global structural properties. Magnetic characterization by superconducting quantum interference device (SQUID) has been complemented by electron spin resonance (ESR) and X-ray magnetic circular dichroism (XMCD). Gd:GaN samples were fabricated by focused-ion-beam (FIB) implantation and molecular beam epitaxy (MBE). Room temperature ferromagnetic-like behavior as found for some of our samples by SQUID could not be reliably reproduced. Instead XMCD measurements at the Gd L{sub 3}-edge reveal paramagnetic behavior of the dopant. Additionally a possible magnetic polarization of Ga atoms of the host crystal is shown to be too small to explain the total magnetization of these samples. In some samples the formation of Gd and GdN clusters was evidenced by ESR measurements but it can only account for low temperature ferromagnetic-like behavior. Intrinsic room temperature ferromagnetism of this material as seen by SQUID cannot be confirmed by any other technique - neither ESR nor XMCD. Co:ZnO samples used for this work were predominantly grown by reactive magnetron sputtering (RMS). As shown by XLD analysis, 95% of the Co atoms are incorporated on substitutional Zn-sites in samples of best structural quality. These samples consistently show paramagnetic behavior as found by SQUID, XMCD and ESR. RMS growth of Co:ZnO with reduced oxygen partial pressure yields a magnetic behavior known from ferromagnetic nanoclusters. The X

  11. Effect of thermodynamic fluctuations of magnetization on the bound magnetic polaron state in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Bednarski, Henryk; Spałek, Józef

    2014-01-01

    We extend the theory of the bound magnetic polaron (BMP) in diluted paramagnetic semiconductors to the situation with a ferromagnetic phase transition. This is achieved by including the classical Gaussian fluctuations of magnetization from the quartic (non-Gaussian) term in the effective Ginzburg–Landau Hamiltonian for the spins. Within this approach, we find a ferromagnetically ordered state within the BMP in the temperature range well above the Curie temperature for the host magnetic semiconductor. Numerical results are compared directly with the recently available experimental data for the ferromagnetic semiconductor GdN. The agreement is excellent, given the simplicity of our model, and is because the polaron size (≃1.4 nm) encompasses a relatively large but finite number (N≈400) of quasiclassical spins S=7/2 coming from Gd 3+ ions. The presence of BMP invalidates the notion of critical temperature and thus makes the incorporation of classical Gaussian fluctuations sufficient to realistically describe the situation. (paper)

  12. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  13. Mean-field theory of magnetic properties of Mn.sub.x./sub.III.sub.1-x./sub.V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Abolfath, M.; Jungwirth, Tomáš; MacDonald, A. H.

    2001-01-01

    Roč. 10, - (2001), s. 161-164 ISSN 1386-9477 Institutional research plan: CEZ:AV0Z1010914 Keywords : diluted magnetic semiconductors * ferromagnetism * magnetic anisotropy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.009, year: 2001

  14. InGaAs Quantum Dots on Cross-Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium

    Directory of Open Access Journals (Sweden)

    Teeravat Limwongse

    2013-01-01

    Full Text Available Storage density on magnetic medium is increasing at an exponential rate. The magnetic region that stores one bit of information is correspondingly decreasing in size and will ultimately reach quantum dimensions. Magnetic quantum dots (QDs can be grown using semiconductor as a host and magnetic constituents added to give them magnetic properties. Our results show how molecular beam epitaxy and, particularly, lattice-mismatched heteroepitaxy can be used to form laterally aligned, high-density semiconducting host in a single growth run without any use of lithography or etching. Representative results of how semiconductor QD hosts arrange themselves on various stripes and cross-hatch patterns are reported.

  15. Control of magnetism in dilute magnetic semiconductor (Ga,Mn)As films by surface decoration of molecules

    Science.gov (United States)

    Wang, Hailong; Wang, Xiaolei; Xiong, Peng; Zhao, Jianhua

    2016-03-01

    The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,Mn)As thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,Mn)As thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,Mn)As and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

  16. Control of magnetism in dilute magnetic semiconductor (Ga,MnAs films by surface decoration of molecules

    Directory of Open Access Journals (Sweden)

    Hailong eWang

    2016-03-01

    Full Text Available The responses of magnetic moments to external stimuli such as magnetic-field, heat, light and electric-field have been utilized to manipulate the magnetism in magnetic semiconductors, with many of the novel ideas applied even to ferromagnetic metals. Here, we review a new experimental development on the control of magnetism in (Ga,MnAs thin films by surface decoration of organic molecules: Molecules deposited on the surface of (Ga,MnAs thin films are shown to be capable of significantly modulating their saturation magnetization and Curie temperature. These phenomena are shown to originate from the carrier-mediated ferromagnetism in (Ga,MnAs and the surface molecules acting as acceptors or donors depending on their highest occupied molecular orbitals, resembling the charge transfer mechanism in a pn junction in which the equilibrium state is reached on the alignment of Fermi levels.

  17. Magnetic and structural characterization of the semiconductor FeIn2Se4

    International Nuclear Information System (INIS)

    Torres, T.; Sagredo, V.; Chalbaud, L.M. de; Attolini, G.; Bolzoni, F.

    2006-01-01

    Plate-like single crystals of magnetic semiconductor FeIn 2 Se 4 were grown with a chemical vapour transport technique. The X-ray powder diffraction analyses suggest that the compound crystallize in the hexagonal structure with space group P3m1. We have performed dc magnetization measurements at different magnetic fields on the diluted magnetic semiconductor FeIn 2 Se 4 . Low field magnetizations measurements shows irreversibility in the DC magnetization, as evidenced by field cooled and zero field cooled measurements below 17 K, suggesting a spin-glass like behaviour. The high-temperature susceptibility data follow a typical Curie-Weiss law with θ=-183±2 K which suggest the presence of predominant antiferromagnetic interactions with high degree of frustration. The randomness and frustration necessary for spin-glass behaviour are explained in a manner compatible with the cation and charge ordering present in the material

  18. High pressure phase transition and anharmonic properties of Zn1-xMxSe (M=Cd, Fe and Mn) diluted magnetic semiconductor

    International Nuclear Information System (INIS)

    Talati, Mina; Shinde, Satyam; Jha, Prafulla K.

    2004-01-01

    The present work employs interionic potential approach based on charge transfer effect to calculate and describe the high pressure phase transition and elastic behaviour of the diluted magnetic semiconductors Zn 1-x M x Se (M=Cd, Fe and Mn). We have obtained a reasonably good agreement between present calculated values and experimentally observed data on the phase transition pressures. The volume collapses and high pressure behaviours are also in reasonably good agreement with the available data for all compounds under consideration. The variations of elastic constants and their combinations with pressure follow a systematic trend, identical to that observed in other compounds of zinc blende structure family. The present approach has also succeeded in predicting the Born and relative stability criteria

  19. Magneto-transport in CdTe/CdMnTe dilute magnetic semiconductor single barrier structures

    International Nuclear Information System (INIS)

    Lyons, V.R.

    1999-03-01

    This thesis presents work done on electrical transport through dilute magnetic semiconductor (DMS) single barriers in both zero and non-zero magnetic fields. The fields are applied either perpendicular or parallel to the DMS layers. The main samples under investigation consist of 100 A and 200 A CdTe/Cd 0.8 Mn 0.2 Te/CdTe single barrier heterostructures. In addition electrical characterisation of the non magnetic layers is performed. Current through the barrier is measured as a function of voltage, magnetic field and temperature. A theoretical model is derived in order to calculate the current as a function of barrier height, barrier width, emitting layer carrier concentration, applied bias and temperature. These variables are then treated as fitting parameters and comparisons are made between the calculated and the experimental currents. The barriers are shown to produce non-Ohmic transport. The roles of quantum mechanical tunnelling and thermal activation across the barrier are investigated and shown to be highly mixed. An unexpectedly high degree of tunnelling is found to occur at high temperatures, within the region previously assumed to be dominated by thermal activation. Moreover the barrier height is found to be lower and the width greater than expected. These observations suggest that a high level of Mn diffusion occurs, possibly due to In dopant related effects. This suggestion is validated by the high emitting layer carrier concentration suggested by the fitting. At low temperatures and voltages the thicker barrier sample is shown to contain a parasitic leak path which short-circuits the barrier. This leak may exist in both samples but only becomes dominant where the barriers are sufficiently opaque to the incident carriers. Changes in a magnetic field are expected to be due to sp-d exchange induced giant Zeeman splitting in the barrier and either normal spin splitting or sp-d exchange effects in the emitter regions. The application of a magnetic field is

  20. Manipulation of incoherent and coherent spin ensembles in diluted magnetic semiconductors via ferromagnetic fringe fields; Manipulation inkohaerenter und kohaerenter Spinensembles in verduennt-magnetischen Halbleitern mittels ferromagnetischer Streufelder

    Energy Technology Data Exchange (ETDEWEB)

    Halm, Simon

    2009-05-19

    In this thesis it is demonstrated that fringe fields of nanostructured ferromagnets provide the opportunity to manipulate both incoherent and coherent spin ensembles in a dilute magnetic semiconductor (DMS). Fringe fields of Fe/Tb ferromagnets with a remanent out-of-plane magnetization induce a local magnetization in a (Zn,Cd,Mn)Se DMS. Due to the sp-d exchange interaction, optically generated electron-hole pairs align their spin along the DMS magnetization. One obtains a local, remanent spin polarization which was probed by spatially resolved, polarization sensitive photoluminescence spectroscopy. Fringe fields from in-plane magnetized Co ferromagnets allow to locally modify the precession frequency of the Manganese magnetic moments of the DMS in an external magnetic field. This was probed by time-resolved Kerr rotation technique. The inhomogeneity of the fringe field leads to a shortening of the ensemble decoherence time and to the effect of a time-dependent ensemble precession frequency. (orig.)

  1. Cobalt-doped ZnO as dilute magnetic semiconductor; Cobalt dotiertes ZnO als verduennter magnetischer Halbleiter

    Energy Technology Data Exchange (ETDEWEB)

    Gacic, Milan

    2009-04-24

    Dilute magnetic semiconductors (DMS) are technologically promising materials that show ferromagnetic as well as semiconducting properties. These are one of the crucial compounds concerning the development of spintronic devices. The main problem so far ist that for applications the Curie temperature of most of the DMS compounds is much too low. However, DMS compounds based on ZnO as Zn{sub 1-x}Co{sub x}O seem to show ferromagnetism above room temperature, but the ferromagnetic exchange is not fully understood. Intensive experimental investigations need to be done. In the course of this theses Zn{sub 0.95}Co{sub 0.05}O thin films were fabricated by pulsed laser deposition and investigated concerning their magnetic, magnetoelectric and structural properties in order to understand the ferromagnetism in this material. Different experimental methods have been used, as magnetometry, X-ray diffraction (XRD), X-ray magnetic circular dichroism (XMCD), electron spin resonance (ESR) and magnetoelectric transport measurements. At special preparation conditions, where a high defect density is induced, the samples are clearly ferromagnetic above room temperature with a saturation magnetization of 2 {mu}{sub b}/Co and a remanence of 90%. Electrical transport measurements show a clear magnetoresistance as well as a anomalous Hall effect. The anomalous Hall effect rises with the magnetization indicating intrinsic ferromagnetism and a certain degree of spin polarization. As the ferromagnetism disappears with rising charge carrier density the ferromagnetic interaction cannot be mediated by the conduction electrons. A more precise evaluation of the magnetoelectric results shows that there is an additional conducting impurity band which could even be spinpolarized. So there are indications that the ferromagnetism is due to magnetic polarons. Some of the structural and magnetometric results as well as the electron spin resonance measurements suggest an additional extrinsic contribution

  2. Ultrafast Control of Magnetism in Ferromagnetic Semiconductors via Photoexcited Transient Carriers

    Energy Technology Data Exchange (ETDEWEB)

    Cotoros, Ingrid A. [Univ. of California, Berkeley, CA (United States)

    2008-12-01

    The field of spintronics offers perspectives for seamless integration of coupled and inter-tunable electrical and magnetic properties in a single device. For integration of the spin degree of freedom with current electronic technology, new semiconductors are needed that show electrically-tunable magnetic properties at room temperature and above. Dilute magnetic semiconductors derived from III-V compounds, like GaMnAs and InMnAs, show coupled and tunable magnetic, transport, and optical properties, due to the fact that their ferromagnetism is hole-mediated. These unconventional materials are ideal systems for manipulating the magnetic order by changing the carrier polarization, population density, and energy band distribution of the complementary subsystem of holes. This is the main theme we cover in this thesis. In particular, we develop a unique setup by use of ultraviolet pump, near-infrared probe femtosecond laser pulses, that allows for magneto-optical Kerr effect (MOKE) spectroscopy experiments. We photo-excite transient carriers in our samples, and measure the induced transient magnetization dynamics. One set of experiments performed allowed us to observe for the first time enhancement of the ferromagnetic order in GaMnAs, on an ultrafast time scale of hundreds of picoseconds. The corresponding transient increase of Curie temperature (Tc, the temperature above which a ferromagnetic material loses its permanent magnetism) of about 1 K for our experimental conditions is a very promising result for potential spintronics applications, especially since it is seconded by observation of an ultrafast ferromagnetic to paramagnetic phase transition above Tc. In a different set of experiments, we "write" the magnetization in a particular orientation in the sample plane. Using an ultrafast scheme, we alter the distribution of holes in the system and detect signatures of the particular memory state in the subsequent magnetization dynamics, with unprecedented hundreds of

  3. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  4. Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

    International Nuclear Information System (INIS)

    Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

    2006-01-01

    We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

  5. First-principles calculation on dilute magnetic alloys in zinc blend crystal structure

    International Nuclear Information System (INIS)

    Ullah, Hamid; Inayat, Kalsoom; Khan, S.A; Mohammad, S.; Ali, A.; Alahmed, Z.A.; Reshak, A.H.

    2015-01-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic alloys in zinc blende structure. The first-principles study is carried out on Mn doped III–V semiconductors. The calculated band structures, electronic properties and magnetic properties of Ga 1−x Mn x X (X=P, As) compounds reveal that Ga 0.75 Mn 0.25 P is half metallic turned to be metallic with increasing x to 0.5 and 0.75, whereas substitute P by As cause to maintain the half-metallicity nature in both of Ga 0.75 Mn 0.25 As and Ga 0.5 Mn 0.5 As and tune Ga 0.25 Mn 0.75 As to be metallic. Calculated total magnetic moments and the robustness of half-metallicity of Ga 0.75 Mn 0.25 P, Ga 0.75 Mn 0.25 As and Ga 0.5 Mn 0.5 As with respect to the variation in lattice parameters are also discussed. The predicted theoretical evidence shows that some Mn-doped III–V semiconductors can be effectively used in spintronic devices

  6. Weak ferromagnetism and temperature dependent dielectric properties of Zn{sub 0.9}Ni{sub 0.1}O diluted magnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Raju [Department of Electrical and Electronic Engineering, Shahjalal University of Science and Technology, Sylhet 3114 (Bangladesh); Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka 1000 (Bangladesh); Moslehuddin, A.S.M.; Mahmood, Zahid Hasan [Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka 1000 (Bangladesh); Hossain, A.K.M. Akther, E-mail: akmhossain@phy.buet.ac.bd [Department of Physics, Bangladesh University of Engineering and Technology, Dhaka 1000 (Bangladesh)

    2015-03-15

    Highlights: • Single phase wurtzite structure was confirmed from XRD analysis. • Weak ferromagnetic behaviour at room temperature. • Pure semiconducting properties confirmed from temperature dependent conductivity. • Smaller dielectric properties at higher frequency. • Possible potential application in high frequency spintronic devices. - Abstract: In this study the room temperature ferromagnetic behaviour and dielectric properties of ZnO based diluted magnetic semiconductor (DMS) have been investigated using nominal chemical composition Zn{sub 0.9}Ni{sub 0.1}O. The X-ray diffraction analysis confirmed formation of single phase hexagonal wurtzite structure. An increase in grain size with increasing sintering temperature was observed from scanning electron microscopy. Field dependent DC magnetization values indicated dominant paramagnetic ordering along with a slight ferromagnetic behaviour at room temperature. Frequency dependent complex initial permeability showed some positive values around 12 at room temperature. In dielectric measurement, an increasing trend of complex permittivity, loss tangent and ac conductivity with increasing temperature were observed. The temperature dependent dispersion curves of dielectric properties revealed clear relaxation at higher temperature. Frequency dependent ac conductivity was found to increase with frequency whereas complex permittivity and loss tangent showed an opposite trend.

  7. Synthesis of dilute magnetic semiconductors by ion implantation

    International Nuclear Information System (INIS)

    Braunstein, G.H.; Dresselhaus, G.; Withrow, S.P.

    1986-01-01

    We have synthesized layers of CdMnTe by implantation of Mn into CdTe. Samples of CdTe have been implanted with Mn ions of 60 keV energy to fluences in the range 1 x 10 13 cm -2 to 2 x 10 16 cm -2 resulting in local concentrations of up to 10% at the maximum of the Mn distribution. Rutherford backscattering-channeling analysis has been used to study the radiation damage after implantation and after subsequent rapid thermal annealing (RTA). These experiments reveal that RTA for 15 sec at a temperature T greater than or equal to 700 0 C results in the complete recovery of the lattice order, without affecting the stoichiometry of CdTe. Photoluminescence (PL) measurements of a sample showing complete annealing reveal an increase in the band gap corresponding to the synthesis of very dilute (x approx. = 0.004) Cd/sub 1-x/Mn/sub x/Te. A shift of the excitonic PL peak to lower energies is observed when a magnetic field H less than or equal to 1T is applied. These measurements provide clear evidence for the synthesis of a DMS by ion implantation of Mn into CdTe

  8. Theoretical models of ferromagnetic III-V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; Kučera, Jan; MacDonald, A. H.

    2003-01-01

    Roč. 3, - (2003), s. 461-464 ISSN 1567-1739. [Mesoscopic Electronics COST Workshop. Catania, 16.10.2002-19.10.2002] Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.117, year: 2002

  9. First-principles calculation on dilute magnetic alloys in zinc blend crystal structure

    Energy Technology Data Exchange (ETDEWEB)

    Ullah, Hamid, E-mail: hamidullah@yahoo.com [Department of Physics, Government Post Graduate Jahanzeb College, Saidu Sharif Swat (Pakistan); Inayat, Kalsoom [Department of Physics, Government Post Graduate Jahanzeb College, Saidu Sharif Swat (Pakistan); Khan, S.A; Mohammad, S. [Department of Physics, Materials Modeling Laboratory, Hazara University, Mansehra 21300 (Pakistan); Ali, A. [Department of Advanced Materials Science & Engineering, Hanseo University, Seosan-si, Chungnam-do 356-706 (Korea, Republic of); Alahmed, Z.A. [Department of Physics and Astronomy, King Saud University, Riyadh 11451 (Saudi Arabia); Reshak, A.H. [New Technologies-Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia)

    2015-07-01

    Ab-initio calculations are performed to investigate the structural, electronic and magnetic properties of spin-polarized diluted magnetic alloys in zinc blende structure. The first-principles study is carried out on Mn doped III–V semiconductors. The calculated band structures, electronic properties and magnetic properties of Ga{sub 1−x}Mn{sub x}X (X=P, As) compounds reveal that Ga{sub 0.75}Mn{sub 0.25}P is half metallic turned to be metallic with increasing x to 0.5 and 0.75, whereas substitute P by As cause to maintain the half-metallicity nature in both of Ga{sub 0.75}Mn{sub 0.25}As and Ga{sub 0.5}Mn{sub 0.5}As and tune Ga{sub 0.25}Mn{sub 0.75}As to be metallic. Calculated total magnetic moments and the robustness of half-metallicity of Ga{sub 0.75}Mn{sub 0.25}P, Ga{sub 0.75}Mn{sub 0.25}As and Ga{sub 0.5}Mn{sub 0.5}As with respect to the variation in lattice parameters are also discussed. The predicted theoretical evidence shows that some Mn-doped III–V semiconductors can be effectively used in spintronic devices.

  10. Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

    International Nuclear Information System (INIS)

    Yalishev, V.Sh.

    2006-02-01

    Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

  11. Spin-polarized investigation of ferromagnetism on magnetic semiconductors MnxCa1−xS in the rock-salt phase

    International Nuclear Information System (INIS)

    Choutri, H.; Ghebouli, M.A.; Ghebouli, B.; Bouarissa, N.; Uçgun, E.; Ocak, H.Y.

    2014-01-01

    The structural, elastic, electronic and magnetic properties of the diluted magnetic semiconductors Mn x Ca 1−x S in the rock-salt phase have been investigated using first-principles calculations with both LDA and LDA + U functional. Features such as lattice constant, bulk modulus, elastic constants, spin-polarized band structure, total and local densities of states have been computed. We predict the values of the exchange constants and the band edge spin splitting of the valence and conduction bands. The hybridization between S-3p and Mn-3d produces small local magnetic moment on the nonmagnetic Ca and S sites. The ferromagnetism is induced due to the exchange splitting of S-3p and Mn-3d hybridized bands. The total magnetic moment per Mn of Mn x Ca 1−x S is 4.4μ B and 4.5μ B for LDA and LDA + U functional and is independent of the Mn concentration. The unfilled Mn-3d levels reduce the local magnetic moment of Mn from its free space charge value of 5μ B –4.4μ B and4.5μ B for LDA and LDA + U functional due to 3p–3d hybridization. - Highlights: • Fundamental properties of magnetic semiconductors Mn x Ca 1−x S. • Rock-salt phase of Mn x Ca 1−x S. • Magnetic properties of the diluted magnetic semiconductors Mn x Ca 1−x S. • The use of LDA + U functionals

  12. Hydrogenated dilute nitride semiconductors theory, properties, and applications

    CERN Document Server

    Ciatto, Gianluca

    2015-01-01

    ""The electrical and optical properties of the technologically and scientifically important dilute nitride semiconductors are strongly influenced by the introduction of atomic hydrogen. This volume is an excellent summary and resource for the most recent understanding of experimental results and state-of-the-art theoretical studies of the formation, reversibility, and microscopic structure of nitrogen-hydrogen complexes in these materials. The book details how a wide variety of experimental techniques have provided a detailed understanding of the role of hydrogen. It is the premier sourc

  13. Synthesis and properties of the diluted magnetic semiconductor ZnO doped with nickel ions by combustion reaction; Sintese e propriedades do semicondutor magnetico diluido ZnO dopado com ions de niquel por meio da reacao de combustao

    Energy Technology Data Exchange (ETDEWEB)

    Morais, A.; Torquato, R.A.; Costa, A.C.F.M, E-mail: m.artur@hotmail.com.br [Universidade Federal da Paraiba (UFPB), Joao Pessoa, PB (Brazil). Departamento de Engenharia de Materiais; Universidade Federal de Campina Grande (UFCG), PB (Brazil). Departamento de Engenharia de Materiais

    2017-10-01

    One of the greatest challenges for the development of the spintronics this creation of materials having semiconductivity and magnetism at above room temperatures, enabling the creation of devices with greater processing speeds. This work aims to synthesize by combustion reaction semiconductor ZnO doped with nickel ions at a concentration of 0.08 mol for applications such as diluted magnetic semiconductor (DMS). The combustion reaction is quite simple and promising in obtaining single-phase materials at the nanoscale. The obtained powder was subjected to the characterizations of X-ray diffraction (XRD), X-ray fluorescence, vibrating sample magnetometry (VSM), and UV-vis spectroscopy. The crystalline material exhibits ZnO crystalline structure and coercive field of 161,36 Oe, showing that the material exhibits the properties of an SMD. (author)

  14. Bipolar magnetic semiconductor in silicene nanoribbons

    International Nuclear Information System (INIS)

    Farghadan, Rouhollah

    2017-01-01

    Highlights: • A new electronic phase for silicene nanoribbon in the presence of electric and magnetic fields. • Bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps in silicene. • Robust bipolar magnetic semiconductor features in a rough silicene. • Perfect and reversible spin polarization in silicene nanoribbon junctions. - Abstract: A theoretical study was presented on generation of spin polarization in silicene nanoribbons using the single-band tight-binding approximation and the non-equilibrium Green’s function formalism. We focused on the effect of electric and exchange magnetic fields on the spin-filter capabilities of zigzag-edge silicene nanoribbons in the presence of the intrinsic spin-orbit interaction. The results show that a robust bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps can be obtained when exchange magnetic and electric field strengths are both larger than the intrinsic spin-orbit interaction. Therefore, zigzag silicene nanoribbons could act as bipolar and perfect spin filter devices with a large spin-polarized current and a reversible spin polarization in the vicinity of the Fermi energy. We also investigated the effect of edge roughness and found that the bipolar magnetic semiconductor features are robust against edge disorder in silicene nanoribbon junctions. These results may be useful in multifunctional spin devices based on silicene nanoribbons.

  15. Bipolar magnetic semiconductor in silicene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Farghadan, Rouhollah, E-mail: rfarghadan@kashanu.ac.ir

    2017-08-01

    Highlights: • A new electronic phase for silicene nanoribbon in the presence of electric and magnetic fields. • Bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps in silicene. • Robust bipolar magnetic semiconductor features in a rough silicene. • Perfect and reversible spin polarization in silicene nanoribbon junctions. - Abstract: A theoretical study was presented on generation of spin polarization in silicene nanoribbons using the single-band tight-binding approximation and the non-equilibrium Green’s function formalism. We focused on the effect of electric and exchange magnetic fields on the spin-filter capabilities of zigzag-edge silicene nanoribbons in the presence of the intrinsic spin-orbit interaction. The results show that a robust bipolar magnetic semiconductor with controllable spin-flip and spin-conserved gaps can be obtained when exchange magnetic and electric field strengths are both larger than the intrinsic spin-orbit interaction. Therefore, zigzag silicene nanoribbons could act as bipolar and perfect spin filter devices with a large spin-polarized current and a reversible spin polarization in the vicinity of the Fermi energy. We also investigated the effect of edge roughness and found that the bipolar magnetic semiconductor features are robust against edge disorder in silicene nanoribbon junctions. These results may be useful in multifunctional spin devices based on silicene nanoribbons.

  16. Nanocasting synthesis of co-doped In{sub 2}O{sub 3}: a 3D diluted magnetic semiconductor composed of nanospheres

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Ni; Li, Jing; Hong, Bo; Jin, Dingfeng; Peng, Xiaoling; Wang, Xinqing; Ge, Hongliang; Jin, Hongxiao, E-mail: hxjin@cjlu.edu.cn, E-mail: hxjin5704@qq.com [China Jiliang University, Zhejiang Province Key Laboratory of Magnetism, College of Materials Science and Engineering (China)

    2015-04-15

    Mesoporous 3D nanosphere arrays of In{sub 2−x}Co{sub x}O{sub 3} (x = 0, 0.01, 0.03, 0.05, and 0.07) were synthesized via nanocasting using the mesoporous silica LP-FDU-12 as a hard template. The mesostructure, morphology, optical properties, and magnetic properties of the materials were determined. The diameter of the nanospheres was about 15–22 nm, and the nanospheres stacked into 0.5–5 μm arrays (particles). The data revealed that the Co ions entered the lattice of the In{sub 2}O{sub 3} bixbyite phase leading to a reduction of the cell parameter. The result also demonstrated that the size of the mesostructured ordering was approximately the same as the particle diameter. Moreover, the optical band gap of Co-doped In{sub 2}O{sub 3} decreased monotonically with the increase of Co concentration and the room-temperature photoluminescence was also observed. The un-doped In{sub 2}O{sub 3} exhibited a ferromagnetic behavior superimposed on a diamagnetic background, while the doped In{sub 2}O{sub 3} displayed a room-temperature ferromagnetic behavior superimposed on a paramagnetic background, which may be correlated with the surface texture of the mesostructure. The mesoporous diluted magnetic semiconductors may find their applications in spintronic nanodevices because of their 3D uniform arrangement of nanospheres and their room-temperature ferromagnetic behavior.

  17. Infrared magneto-optical properties of (III, Mn)V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Sinova, J.; Jungwirth, Tomáš; Kučera, Jan; MacDonald, A. H.

    2003-01-01

    Roč. 67, č. 23 (2003), s. 235203-1 - 235203-11 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * diluted magnetic semiconductors * magneto-optical properties ac-Hall conductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  18. Initial magnetic susceptibility of the diluted magnetopolymer elastic composites

    International Nuclear Information System (INIS)

    Borin, D.Yu.; Odenbach, S.

    2017-01-01

    In this work diluted magnetopolymer elastic composites based on magnetic microparticles are experimentally studied. Considered samples have varied concentration of the magnetic powder and different structural anisotropy. Experimental data on magnetic properties are accomplished by microstructural observations performed using X-Ray tomography. Influence of the particles amount and structuring effects on the initial magnetic susceptibility of the composites as well as the applicability of the Maxwell-Garnett approximation, which is widely used in considerations of magnetopolymer elastic composites, are evaluated. It is demonstrated that the approximation works well for diluted samples containing randomly distributed magnetic particles and for the diluted samples with chain-like structures oriented perpendicular to an externally applied field, while it fails to predict the susceptibility of the samples with structures oriented parallel to the field. Moreover, it is shown, that variation of the chains morphology does not significantly change the composite initial magnetic susceptibility. - Highlights: • The Maxwell-Garnet prediction works well for the diluted isotropic composites. • The Maxwell-Garnet prediction can be used for composites with structures oriented perpendicular to an applied field. • Chains oriented parallel to an applied field significantly increase the composite initial magnetic susceptibility. • The number and thickness of chains is not of the highest importance for the diluted composites. • The crucial reason of the observed effect is expected to be the demagnetisation factor of the chains.

  19. Theoretical investigation of the heavily-doped semiconductor aspect of ultra-dilute GaAsN

    Science.gov (United States)

    Sukpitak, Jessada; Sa-yakanit, Virulh

    2015-12-01

    The model of GaAs1- y N y ( y = 0.001) as a heavily-doped semiconductor in the ultra-dilute region is attentively examined. The model enables GaAsN to be viewed as a disordered assembly of three-dimensional quantum dots (potential wells) caused by random potential fluctuations from nitrogen pairs in the system. Consequently, Feynman's path-integration technique is applied in order to quantify the density of states (DOS) in the vicinity of the conduction band edge. The obtained DOS tail, even though overestimated, still clearly shows a much shorter tail than that the experimental result does. This shows that the heavily-doped semiconductor viewpoint is not proper for GaAsN, not even in the ultra-dilute region. Furthermore, this also suggests that the impurity wave function overlap is not a basic mechanism of band gap reduction.

  20. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  1. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  2. Spin-polarized investigation of ferromagnetism on magnetic semiconductors Mn{sub x}Ca{sub 1−x}S in the rock-salt phase

    Energy Technology Data Exchange (ETDEWEB)

    Choutri, H.; Ghebouli, M.A. [LMSE Laboratory, University of Bachir Ibrahimi, 34265 Bordj-Bou-Arréridj (Algeria); Ghebouli, B. [Laboratory of Surface and Interface Studies of Solid Materials, Department of Physics, Faculty of Science, Setif University 1, Setif 19000 (Algeria); Bouarissa, N., E-mail: n_bouarissa@yahoo.fr [Department of Physics, Faculty of Science, University of M' sila, 28000 M' sila (Algeria); Uçgun, E.; Ocak, H.Y. [Department of Physics, Faculty of Arts and Sciences, Dumlupinar University, Kutahya (Turkey)

    2014-12-15

    The structural, elastic, electronic and magnetic properties of the diluted magnetic semiconductors Mn{sub x}Ca{sub 1−x}S in the rock-salt phase have been investigated using first-principles calculations with both LDA and LDA + U functional. Features such as lattice constant, bulk modulus, elastic constants, spin-polarized band structure, total and local densities of states have been computed. We predict the values of the exchange constants and the band edge spin splitting of the valence and conduction bands. The hybridization between S-3p and Mn-3d produces small local magnetic moment on the nonmagnetic Ca and S sites. The ferromagnetism is induced due to the exchange splitting of S-3p and Mn-3d hybridized bands. The total magnetic moment per Mn of Mn{sub x}Ca{sub 1−x}S is 4.4μ{sub B} and 4.5μ{sub B} for LDA and LDA + U functional and is independent of the Mn concentration. The unfilled Mn-3d levels reduce the local magnetic moment of Mn from its free space charge value of 5μ{sub B}–4.4μ{sub B} and4.5μ{sub B} for LDA and LDA + U functional due to 3p–3d hybridization. - Highlights: • Fundamental properties of magnetic semiconductors Mn{sub x}Ca{sub 1−x}S. • Rock-salt phase of Mn{sub x}Ca{sub 1−x}S. • Magnetic properties of the diluted magnetic semiconductors Mn{sub x}Ca{sub 1−x}S. • The use of LDA + U functionals.

  3. Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

    International Nuclear Information System (INIS)

    Zhou, Shengqiang

    2015-01-01

    Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III–V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III–V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III–V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III–V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components. (topical review)

  4. Electronic paramagnetic resonance in the Mn In X (X:Te,S) diluted magnetic semiconductor system

    International Nuclear Information System (INIS)

    Vincent, Bernardo; Betancourt, Luis; Sagredo, Vicente; Alcala, Rafael

    1996-01-01

    Semiconductor compounds wit the II-III-VI stoichiometry are very interesting materials since they present very good semiconducting characteristics and, along with strong magnetic properties, these II Mn In VI compounds have a great potential as opt and magneto-electronic devices. Among the possible magnetic properties of the materials is the presence of the spin-glass phase. Electron paramagnetic resonance is one of the techniques used to confirm this phase. The chosen crystals were chosen by chemical vapor transport. The absorption lines of these two families with 0.1 x 1 were all Lorentzian in shape and centred at g=2. A large broadening of the resonance line width was observed when lowering the temperature to below 80 K. This behaviour was fitted to the known existing models, and good values of the calculated parameters were obtained (author)

  5. Enhancement of surface magnetism due to bulk bond dilution

    International Nuclear Information System (INIS)

    Tsallis, C.; Sarmento, E.F.; Albuquerque, E.L. de

    1985-01-01

    Within a renormalization group scheme, the phase diagram of a semi-infinite simple cubic Ising ferromagnet is discussed, with arbitrary surface and bulk coupling constants, and including possible dilution of the bulk bonds. It is obtained that dilution makes easier the appearance of surface magnetism in the absence of bulk magnetism. (Author) [pt

  6. Effect of Al doping on the magnetic and electrical properties of Zn(Cu)O based diluted magnetic semiconductors

    Science.gov (United States)

    Chakraborti, D.; Trichy, G.; Narayan, J.; Prater, J. T.; Kumar, D.

    2007-12-01

    The effect of Al doping on the magnetic properties of Zn(Cu)O based dilute magnetic semiconducting thin films has been systematically investigated. Epitaxial thin films have been deposited onto sapphire c-plane single crystals using pulsed laser deposition technique. X-ray diffraction and high resolution transmission electron microscopy studies show that the Zn(Cu,Al)O films are epitaxially grown onto (0001) sapphire substrates with a 30°/90° rotation in the basal plane. The large lattice misfit of the order of 16% is accommodated by matching integral multiples of lattice and substrate planes. In these large mismatch systems, the resulting films are fully relaxed following deposition of the first complete monolayer of ZnO (consistent with a critical thickness that is less than one monolayer). Magnetic hysteresis measurements indicate that the pure Zn(Cu)O thin films are ferromagnetic at room temperature. Doping with up to 5% Al (n type) does not significantly affect the ferromagnetism even though it results in an increase in carrier densities of more than 3 orders of magnitude, rising from 1×1017 to 1.5×1020 cm-3. However, for Al additions above 5%, a drop in net magnetization is observed. Annealing the films in an oxygen atmosphere at 600 °C also resulted in a dramatic drop in magnetic moment of the samples. These results strongly suggest that carrier induced exchange is not directly responsible for the magnetic properties of these materials. Rather, a defect mediated exchange mechanism needs to be invoked for this system.

  7. Small-polaron formation and motion in magnetic semiconductors

    International Nuclear Information System (INIS)

    Emin, D.

    1979-01-01

    The fundamental physical processes associated with small-polaron formation are described with various magnetic semi-conductors being cited as examples. Attention is then directed toward the mechanisms of charge transfer and small-polaron hopping motion in magnetic semiconductors

  8. Synthesis of diluted magnetic semiconductor Bi{sub 2−x}Mn{sub x}Te{sub 3} nanocrystals in a host glass matrix

    Energy Technology Data Exchange (ETDEWEB)

    Silva, R.S. [Instituto de Ciências Exatas, Naturais e Educação (ICENE), Departamento de Física, Universidade Federal do Triângulo Mineiro, 38025-180 Uberaba, Minas Gerais (Brazil); Mikhail, H.D., E-mail: ricardosilva@fisica.uftm.edu.br [Instituto de Ciências Tecnológicas e Exatas (ICTE), Departamento de Engenharia Mecânica, Universidade Federal do Triângulo Mineiro, 38064-200 Uberaba, Minas Gerais (Brazil); Pavani, R. [Instituto de Ciências Exatas, Naturais e Educação (ICENE), Departamento de Física, Universidade Federal do Triângulo Mineiro, 38025-180 Uberaba, Minas Gerais (Brazil); Cano, N.F. [Departamento de Ciências do Mar, Universidade Federal de São Paulo, 11030-400 Santos, São Paulo (Brazil); Silva, A.C.A.; Dantas, N.O. [Instituto de Física, Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Universidade Federal de Uberlândia, 38400-902 Uberlândia, Minas Gerais (Brazil)

    2015-11-05

    Diluted magnetic semiconductors of manganese doped in bismuth-telluride nanocrystals (Bi{sub 2−x}Mn{sub x}Te{sub 3} NCs) were grown in a glass matrix and investigated by Transmission Electron Microscopy, X-Ray Diffraction, Atomic Force Microscopy/Magnetic Force Microscopy, and Electron Paramagnetic Resonance. TEM images showed that the nanocrystals formed within the glass matrix were nearly spherical, with average sizes between 4 and 5 nm, and d{sub 015}-spacing of approximately 0.322 nm, which corresponds to the (015) interplanar distance in Bi{sub 2}Te{sub 3} bulk. The diffraction patterns showed that the diffraction peak associated with the (015) plane of the Bi{sub 2−x}Mn{sub x}Te{sub 3} nanocrystals shifts to larger diffraction angles as manganese (Mn) concentration increases, suggesting that the Mn{sup 2+} ions are substitutional defects occupying Bi sites (Mn{sub Bi}). AFM and MFM measurements showed magnetic phase contrast patterns, providing further evidence of Mn{sup 2+} ion incorporation in the nanocrystal structure. EPR signal of manganese ion incorporation and valence states in the crystalline structure of the Bi{sub 2}Te{sub 3} nanocrystals confirmed the presence of the Mn{sup 2+} state. - Highlights: • Bi{sub 2−x}Mn{sub x}Te{sub 3} NCs were synthesized in a glass matrix by fusion method. • Transmission Electronic Microscopy shows the formation of Bi{sub 2−x}Mn{sub x}Te{sub 3} NCs. • The sp-d exchange interaction in DMS NCs can be evidenced by X Ray-Diffraction and Magnetic Force Microscopy. • Electron Paramagnetic Resonance spectra confirmed that Mn{sup 2+} ions are located in two distinct Bi{sub 2}Te{sub 3} NCs sites.

  9. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  10. Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2

    International Nuclear Information System (INIS)

    Sun, F.; Zhao, G. Q.; Escanhoela, C. A. Jr.

    2017-01-01

    We investigate doping- and pressure-induced changes in the electronic state of Mn 3d and As 4p orbitals in II-II-V based diluted magnetic semiconductor (Ba_1_-_x,K_x)(Zn_1_-_y,Mn_y)_2As_2 to shed light into the mechanism of indirect exchange interactions leading to high ferromagnetic ordering temperature (T_c = 230 K in optimally doped samples). A suite of x-ray spectroscopy experiments (emission, absorption and dichroism) show that the emergence, and further enhancement of ferromagnetic interactions with increased hole doping into the As 4p band is accompanied by a decrease in local 3d spin density at Mn sites. This is a result of increasing Mn 3d - As 4p hybridization with hole doping which enhances indirect exchange interactions between Mn dopants and gives rise to induced magnetic polarization in As 4p states. On the contrary, application of pressure suppresses exchange interactions. While Mn Kβ emission spectra show a weak response of 3d state to pressure, clear As 4p band broadening (hole delocalization) is observed under pressure ultimately leading to loss of ferromagnetism concomitant with a semiconductor to metal transition. The pressure response of As 4p and Mn 3d states is intimately connected with the evolution of the As-As interlayer distance and the geometry of the MnAs_4 tetrahedral units, which we probed with X-ray diffraction. Our results indicate that hole doping increases the degree of covalency between the anion (As) p states and cation (Mn) d states in the MnA_s_4 tetrahedron, a crucial ingredient to promote indirect exchange interactions between Mn dopants and high T_c ferromagnetism. As a result, the instability of ferromagnetism and semiconducting state against pressure is mainly dictated by delocalization of anion p states.

  11. Non-linear spin transport in magnetic semiconductor superlattices

    International Nuclear Information System (INIS)

    Bejar, Manuel; Sanchez, David; Platero, Gloria; MacDonald, A.H.

    2004-01-01

    The electronic spin dynamics in DC-biased n-doped II-VI semiconductor multiquantum wells doped with magnetic impurities is presented. Under certain range of electronic doping, conventional semiconductor superlattices present self-sustained oscillations. Magnetically doped wells (Mn) present large spin splittings due to the exchange interaction. The interplay between non-linear interwell transport, the electron-electron interaction and the exchange between electrons and the magnetic impurities produces interesting time-dependent features in the spin polarization current tuned by an external magnetic field

  12. Spin injection in self-assembled quantum dots coupled with a diluted magnetic quantum well

    International Nuclear Information System (INIS)

    Murayama, A.; Asahina, T.; Souma, I.; Koyama, T.; Hyomi, K.; Nishibayashi, K.; Oka, Y.

    2007-01-01

    Spin injection is studied in self-assembled quantum dots (QDs) of CdSe coupled with a diluted magnetic semiconductor quantum well (DMS-QW) of Zn 1- x - y Cd x Mn y Se, by means of time-resolved circularly polarized photoluminescence (PL). Excitonic PL from the CdSe QDs shows σ - -circular polarization in magnetic fields, mainly due to negative g-values of individual dots, when the energy difference of excitons between the QDs and DMS-QW is large as 300 meV. However, when such energy difference is comparable with LO-phonon energy in the QD, we observe an additional PL peak with the long lifetime as 3.5 ns and σ + -polarization in magnetic fields. It can be attributed to a type-II transition between the down-spin electron injected from the DMS-QW into the QDs, via LO-phonon-assisted resonant tunneling, and the down-spin heavy hole in the DMS-QW. In addition, the electron spin-injection is also evidenced by σ + -polarized PL with the fast rise-time of 20 ps in the QDs

  13. A Designed Room Temperature Multilayered Magnetic Semiconductor

    Science.gov (United States)

    Bouma, Dinah Simone; Charilaou, Michalis; Bordel, Catherine; Duchin, Ryan; Barriga, Alexander; Farmer, Adam; Hellman, Frances; Materials Science Division, Lawrence Berkeley National Lab Team

    2015-03-01

    A room temperature magnetic semiconductor has been designed and fabricated by using an epitaxial antiferromagnet (NiO) grown in the (111) orientation, which gives surface uncompensated magnetism for an odd number of planes, layered with the lightly doped semiconductor Al-doped ZnO (AZO). Magnetization and Hall effect measurements of multilayers of NiO and AZO are presented for varying thickness of each. The magnetic properties vary as a function of the number of Ni planes in each NiO layer; an odd number of Ni planes yields on each NiO layer an uncompensated moment which is RKKY-coupled to the moments on adjacent NiO layers via the carriers in the AZO. This RKKY coupling oscillates with the AZO layer thickness, and it disappears entirely in samples where the AZO is replaced with undoped ZnO. The anomalous Hall effect data indicate that the carriers in the AZO are spin-polarized according to the direction of the applied field at both low temperature and room temperature. NiO/AZO multilayers are therefore a promising candidate for spintronic applications demanding a room-temperature semiconductor.

  14. Interchange core/shell assembly of diluted magnetic semiconductor CeO2 and ferromagnetic ferrite Fe3O4 for microwave absorption

    Directory of Open Access Journals (Sweden)

    Jiaheng Wang

    2017-05-01

    Full Text Available Core/shell-structured CeO2/Fe3O4 and Fe3O4/CeO2 nanocapsules are prepared by interchange assembly of diluted magnetic semiconductor CeO2 and ferromagnetic ferrite Fe3O4 as the core and the shell, and vice versa, using a facile two-step polar solvothermal method in order to utilize the room-temperature ferromagnetism and abundant O-vacancies in CeO2, the large natural resonance in Fe3O4, and the O-vacancy-enhanced interfacial polarization between CeO2 and Fe3O4 for new generation microwave absorbers. Comparing to Fe3O4/CeO2 nanocapsules, the CeO2/Fe3O4 nanocapsules show an improved real permittivity of 3–10% and an enhanced dielectric resonance of 1.5 times at 15.3 GHz due to the increased O-vacancy concentration in the CeO2 cores of larger grains as well as the O-vacancy-induced enhancement in interfacial polarization between the CeO2 cores and the Fe3O4 shells, respectively. Both nanocapsules exhibit relatively high permeability in the low-frequency S and C microwave bands as a result of the bi-magnetic core/shell combination of CeO2 and Fe3O4. The CeO2/Fe3O4 nanocapsules effectively enhance permittivity and permeability in the high-frequency Ku band with interfacial polarization and natural resonance at ∼15 GHz, thereby improving absorption with a large reflection loss of -28.9 dB at 15.3 GHz. Experimental and theoretical comparisons with CeO2 and Fe3O4 nanoparticles are also made.

  15. Searching Room Temperature Ferromagnetism in Wide Gap Semiconductors Fe-doped Strontium Titanate and Zinc Oxide

    CERN Document Server

    Pereira, LMC; Wahl, U

    Scientific findings in the very beginning of the millennium are taking us a step further in the new paradigm of technology: spintronics. Upgrading charge-based electronics with the additional degree of freedom of the carriers spin-state, spintronics opens a path to the birth of a new generation of devices with the potential advantages of non-volatility and higher processing speed, integration densities and power efficiency. A decisive step towards this new age lies on the attribution of magnetic properties to semiconductors, the building block of today's electronics, that is, the realization of ferromagnetic semiconductors (FS) with critical temperatures above room temperature. Unfruitful search for intrinsic RT FS lead to the concept of Dilute(d) Magnetic Semiconductors (DMS): ordinary semiconductor materials where 3 d transition metals randomly substitute a few percent of the matrix cations and, by some long-range mechanism, order ferromagnetically. The times are of intense research activity and the last fe...

  16. Chemical trend of exchange coupling in diluted magnetic II-VI semiconductors: Ab initio calculations

    Science.gov (United States)

    Chanier, T.; Virot, F.; Hayn, R.

    2009-05-01

    We have calculated the chemical trend of magnetic exchange parameters ( Jdd , Nα , and Nβ ) of Zn-based II-VI semiconductors ZnA ( A=O , S, Se, and Te) doped with Co or Mn. We show that a proper treatment of electron correlations by the local spin-density approximation (LSDA)+U method leads to good agreement between experimental and theoretical values of the nearest-neighbor exchange coupling Jdd between localized 3d spins in contrast to the LSDA method. The exchange couplings between localized spins and doped electrons in the conduction band Nα are in good agreement with experiment as well. But the values for Nβ (coupling to doped holes in the valence band) indicate a crossover from weak coupling (for A=Te and Se) to strong coupling (for A=O ) and a localized hole state in ZnO:Mn. This hole localization explains the apparent discrepancy between photoemission and magneto-optical data for ZnO:Mn.

  17. Polarization-preserving confocal microscope for optical experiments in a dilution refrigerator with high magnetic field.

    Science.gov (United States)

    Sladkov, Maksym; Bakker, M P; Chaubal, A U; Reuter, D; Wieck, A D; van der Wal, C H

    2011-04-01

    We present the design and operation of a fiber-based cryogenic confocal microscope. It is designed as a compact cold-finger that fits inside the bore of a superconducting magnet, and which is a modular unit that can be easily swapped between use in a dilution refrigerator and other cryostats. We aimed at application in quantum optical experiments with electron spins in semiconductors and the design has been optimized for driving with and detection of optical fields with well-defined polarizations. This was implemented with optical access via a polarization maintaining fiber together with Voigt geometry at the cold finger, which circumvents Faraday rotations in the optical components in high magnetic fields. Our unit is versatile for use in experiments that measure photoluminescence, reflection, or transmission, as we demonstrate with a quantum optical experiment with an ensemble of donor-bound electrons in a thin GaAs film. © 2011 American Institute of Physics

  18. Transport and spin effects in homogeneous magnetic superlattice

    International Nuclear Information System (INIS)

    Cardoso, J.L.; Pereyra, P.; Anzaldo-Meneses, A.

    2000-09-01

    Homogeneous semiconductors under spacially periodic external magnetic fields exhibit spin-band splitting and displacements, more clearly defined than in diluted magnetic semiconductor superlattices. We study the influence of the geometrical parameters and the spin-field interaction on the electronic transport properties. We show that by varying the external magnetic field, one can easily block the transmission of either the spin-up or the spin-down electrons. (author)

  19. DARPA-URI Consortium Meetings on Submicron Heterostructures of Diluted Magnetic Semiconductors.

    Science.gov (United States)

    1987-01-01

    Acta Physica Polonica (to be published). 89. B.E. Larson, K.C. Hass, H. Ehrenreich and A.E. Carlsson, "Theory of Exchange Interactions and Chemical...Rodriguez, "Parity Violation and Electron-Spin Resonance of Donors in Semiconductors" (to appear in Physica ). 45. Z. Barticevic, M. Dobrowolska, J.K. Furdyna

  20. Computational nano-materials design for high-TC ferromagnetism in wide-gap magnetic semiconductors

    International Nuclear Information System (INIS)

    Katayama-Yoshida, H.; Sato, K.; Fukushima, T.; Toyoda, M.; Kizaki, H.; Dinh, V.A.; Dederichs, P.H.

    2007-01-01

    We propose materials design of high-T C wide band-gap dilute magnetic semiconductors (DMSs) based on first-principles calculations by using the Korringa-Kohn-Rostoker coherent potential approximation (KKR-CPA) method. First, we discuss a unified physical picture of ferromagnetism in II-VI and III-V DMSs and show that DMS family is categorized into two groups depending on the electronic structure. One is the system where Zener's double exchange mechanism dominates in the ferromagnetic interaction, and in the other systems Zener's p-d exchange mechanism dominates. Next, we develop an accurate method for T C calculation for the DMSs and show that the mean field approximation completely fails to predict Curie temperature of DMS in particular for wide-gap DMS where the exchange interaction is short-ranged. The calculated T C of homogeneous DMSs by using the present method agrees very well with available experimental values. For more realistic material design, we simulate spinodal nano-decomposition by applying the Monte Carlo method to the Ising model with ab initio chemical pair interactions between magnetic impurities in DMS. It is found that by controlling the dimensionality of the decomposition various characteristic phases occur in DMS such as 3D Dairiseki-phase and 1D Konbu-phase, and it is suggested that super-paramagnetic blocking phenomena should be important to understand the magnetism of wide-gap DMS. Based on the present simulations for spinodal nano-decomposition, we propose a new crystal growth method of positioning by seeding and shape controlling method in 100 Tera-bit density of nano-magnets in the semiconductor matrix with high-T C (or high-T B )

  1. Optical investigation of effective permeability of dilute magnetic dielectrics with magnetic field

    Science.gov (United States)

    Banerjee, Ananya; Sarkar, A.

    2016-05-01

    The prime objective of this paper is to investigate the magnetic nature of dilute magnetic dielectrics (DMD) under variation of external magnetic field. The said variation is studied over developed nano-sized Gadolinium Oxide as a DMD system. The observed experimental field variation of the effective magnetic permeability is analyzed results of optical experiment. The experiment records the variation of Brewster angle of incident polarized LASER beam from the surface of developed DMD specimen with applied out of plane external magnetic field. The effective refractive index and hence relative magnetic permeability were estimated following electro-magnetic theory. The overall results obtained and agreement between theory and experiment are good.

  2. Optical investigation of effective permeability of dilute magnetic dielectrics with magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, Ananya, E-mail: banerjee.ananya2008@gmail.com; Sarkar, A. [Dept. of Physics, Bijoy Krishna Girls’ College, 5/3 M.G. Road, Howrah 711101, W.B. (India)

    2016-05-06

    The prime objective of this paper is to investigate the magnetic nature of dilute magnetic dielectrics (DMD) under variation of external magnetic field. The said variation is studied over developed nano-sized Gadolinium Oxide as a DMD system. The observed experimental field variation of the effective magnetic permeability is analyzed results of optical experiment. The experiment records the variation of Brewster angle of incident polarized LASER beam from the surface of developed DMD specimen with applied out of plane external magnetic field. The effective refractive index and hence relative magnetic permeability were estimated following electro-magnetic theory. The overall results obtained and agreement between theory and experiment are good.

  3. Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

    International Nuclear Information System (INIS)

    Tao Zhikuo; Zhang Rong; Xiu Xiangqian; Cui Xugao; Li Xin; Xie Zili; Zheng Youdou; Li Li; Zheng Rongkun; Ringer, Simon P

    2012-01-01

    We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion concentrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe 3 N clusters are observed with Fe 3 N(0002) parallel to GaN (0002) while for Mn over-doped GaN, hexagonal Mn 6 N 2.58 phases are observed with Mn 6 N 2.58 (0002) parallel to GaN(0002). In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt of GaN(0002) planes. The magnetization of the Fe over-doped GaN sample is increased, which is ascribed to the participation of ferromagnetic iron and Fe 3 N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn 6 N 2.58 . (semiconductor materials)

  4. A treatise on first-principles studies of ZnO as diluted magnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Nayak, Sanjeev Kumar

    2012-04-24

    simulations to estimate the critical temperature. A case study for Co doped ZnO is discussed, where we have calculated the magnetic phase diagram of the system. Apart from this, supercell calculations with Vienna ab-initio simulation package (VASP) have been done to compare the role of various treatment to the E{sub xc}. In case of GGA+U, the U is separately treated on Zn d-orbitals and TM d-orbitals, and then together. From the total energy differences in magnetic states, it is observed that with incorporation of U, all the TM favor antiferromagnetic interactions. Similar conclusion is also reached for most cases in HSE and HSE+U approach. One of the recent topics under discussion for polar semiconductor materials like ZnO is d{sup 0} magnetism. In present study based on GGA it is shown that Zn-vacancy (V{sub Zn}) and C substitution on O site (C{sub O}) lead to spin-polarized solution. The magnetic energy is mostly below the room-temperature. Related to this, some perspectives of experimental situations which could lead to quenching of such magnetization is also presented. Furthermore, studies on pure ZnO clusters based on GGA and HSE functionals are presented. A general tendency which is observed is that the bond length predicted in HSE calculations are larger than those predicted by GGA. Characteristic arrangement of magnetization density in V{sub Zn} and C{sub O} in clusters as calculated from GGA is presented.

  5. Properties of magnetically diluted nanocrystals prepared by mechanochemical route

    International Nuclear Information System (INIS)

    Balaz, P.; Skorvanek, I.; Fabian, M.; Kovac, J.; Steinbach, F.; Feldhoff, A.; Sepelak, V.; Jiang, J.; Satka, A.; Kovac, J.

    2010-01-01

    The bulk and surface properties of magnetically diluted Cd 0.6 Mn 0.4 S nanocrystals synthesized by solid state route in a planetary mill were studied. XRD, SEM, TEM (HRTEM), low-temperature N 2 sorption, nanoparticle size distribution as well as SQUID magnetometry methods have been applied. The measurements identified the aggregates of small nanocrystals, 5-10 nm in size. The homogeneity of produced particles with well developed specific surface area (15-66 m 2 g -1 ) was documented. The transition from the paramagnetic to the spin-glass-like phase has been observed below ∼40 K. The changes in the magnetic behaviour at low temperatures seem to be correlated with the formation of the new surface area as a consequence of milling. The magnetically diluted Cd 0.6 Mn 0.4 S nanocrystals are obtained in the simple synthesis step, making the process attractive for industrial applications.

  6. Probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity.

    Science.gov (United States)

    Luo, X; Tseng, L T; Lee, W T; Tan, T T; Bao, N N; Liu, R; Ding, J; Li, S; Lauter, V; Yi, J B

    2017-07-24

    Room temperature ferromagnetism has been observed in the Cu doped ZnO films deposited under an oxygen partial pressure of 10 -3 and 10 -5 torr on Pt (200 nm)/Ti (45 nm)/Si (001) substrates using pulsed laser deposition. Due to the deposition at relatively high temperature (873 K), Cu and Ti atoms diffuse to the surface and interface, which significantly affects the magnetic properties. Depth sensitive polarized neutron reflectometry method provides the details of the composition and magnetization profiles and shows that an accumulation of Cu on the surface leads to an increase in the magnetization near the surface. Our results reveal that the presence of the copper at Zn sites induces ferromagnetism at room temperature, confirming intrinsic ferromagnetism.

  7. Magnetic semiconductors for spinelectronics. Europium sulfide and magnetically doped gallium nitride; Magnetische Halbleiter zum Einsatz in der Spinelektronik. Europiumsulfid und magnetisch dotiertes Galliumnitrid

    Energy Technology Data Exchange (ETDEWEB)

    Keller, J.

    2007-07-02

    In this work, magnetic semiconductors were investigated. As ferromagnetic compound semiconductor, EuS was investigated as thin film system. Particular attention was paid to the influence of the substrate temperature during growth on the sample properties. The samples grown and investigated here show an anomalous Hall effect. As diluted magnetic semiconductors (DMS), GaN films magnetically doped with Mn or Gd were investigated. In both material systems, ferromagnetism far above room temperature was demonstrated.While GaGdN shows a homogeneous magnetism, all ferromagnetic GaMnN samples show small clusters (phase separations). In addition, measurements of the optical absorption and the magnetic circular dichroism (MCD) were performed on the GaMnN samples. In the optical measurements, the Mn was identified as deep acceptor. At low temperatures, both the magneto-absorption and the MCD show a Zeeman-shift of an absorption band for all doping levels. The exchange energies between valence band and localized magnetic moments can be extracted from fits of the Brillouin function to the Zeeman shifts. This yields values between 1.4 eV and 1.7 eV for the lowest doping levels and between 1.7 eV and 2.1 eV for the highest doped sample. At low temperatures, no ferromagnetic behavior was found in the magneto-optical experiments. The signal is dominated by the localized Mn spin system. At room temperature, the MCD shows a ferromagnetic signature. At elevated temperatures, the signal from the Mn spin system is small enough that the influence of the clusters on the band structure of the host lattice becomes visible. Contrary to the GaMnN samples, the GaGdN films show a homogeneous magnetism. The magnetically doped GaN thin film systems investigated here exhibit different behavior. The exchange mechanism proposed for GaGdN leads to a homogeneous ferromagnetism and is similar to the magnetic exchange in the Eu chalcogenides. The interplay between this intra-atomic f-d exchange and the

  8. Synthesis and characterization of three-dimensional transition metal ions doped zinc oxide based dilute magnetic semiconductor thin films

    Science.gov (United States)

    Samanta, Kousik

    Dilute magnetic semiconductors (DMS), especially 3d-transition metal (TM) doped ZnO based DMS materials are the most promising candidates for optoelectronics and spintronics applications; e.g. in spin light emitting diode (SLED), spin transistors, and spin field effect transistors (SFET), etc. In the present dissertation, thin films of Zn1-xTMxO (TM = Co2+, Cu2+, and Mn2+) were grown on (0001) oriented Al2O3 substrates by pulsed laser deposition (PLD) technique. The films were highly c-axis oriented, nearly single crystalline, and defects free for a limited concentration of the dilution of transition metal ions. In particular, we have obtained single crystalline phases of Zn1-xTMxO thin films for up to 10, 3, and 5 stoichiometric percentages of Co2+, Cu2+, and Mn2+ respectively. Raman micro-probe system was used to understand the structural and lattice dynamical properties at different physical conditions. The confinement of optical phonons in the disorder lattice was explained by alloy potential fluctuation (APF) using a spatial correlation (SC) model. The detailed analysis of the optical phonon behavior in disorder lattice confirmed the substitution of the transition metal ions in Zn 2+ site of the ZnO host lattice. The secondary phases of ZnCo 2O4, CuO, and ZnMn2O4 were detected in higher Co, Cu, and Mn doped ZnO thin films respectively; where as, XRD did not detect these secondary phases in the same samples. Room temperature ferromagnetism was observed in Co2+ and Cu2+ ions doped ZnO thin films with maximum saturation magnetization (Ms) of 1.0 and 0.76 muB respectively. The origin of the observed ferromagnetism in Zn1-xCoxO thin films was tested by the controlled introduction of shallow donors (Al) in Zn0.9-x Co0.1O:Alx (x = 0.005 and 0.01) thin films. The saturation magnetization for the 10% Co-doped ZnO (1.0 muB /Co) at 300K reduced (˜0.25 muB/Co) due to Al doping. The observed ferromagnetism and the reduction due to Al doping can be explained by the Bound

  9. Magnetization relaxation in (Ga, Mn)As ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Sinova, J.; Jungwirth, Tomáš; Liu, X.; Sasaki, Y.; Furdyna, J. K.; Atkinson, W. A.; MacDonald, A. H.

    2004-01-01

    Roč. 69, č. 8 (2004), 085209/1-085209/6 ISSN 0163-1829 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : magnetization relaxation * ferromagnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.075, year: 2004

  10. Magnetite and magnetite/silver core/shell nanoparticles with diluted magnet-like behavior

    International Nuclear Information System (INIS)

    Garza-Navarro, Marco; Torres-Castro, Alejandro; Gonzalez, Virgilio; Ortiz, Ubaldo; De la Rosa, Elder

    2010-01-01

    In the present work is reported the use of the biopolymer chitosan as template for the preparation of magnetite and magnetite/silver core/shell nanoparticles systems, following a two step procedure of magnetite nanoparticles in situ precipitation and subsequent silver ions reduction. The crystalline and morphological characteristics of both magnetite and magnetite/silver core/shell nanoparticles systems were analyzed by high resolution transmission electron microscopy (HRTEM) and nanobeam diffraction patterns (NBD). The results of these studies corroborate the core/shell morphology and the crystalline structure of the magnetite core and the silver shell. Moreover, magnetization temperature dependent, M(T), measurements show an unusual diluted magnetic behavior attributed to the dilution of the magnetic ordering in the magnetite and magnetite/silver core/shell nanoparticles systems. - Graphical abstract: Biopolymer chitosan was used as stabilization media to synthesize both magnetite and magnetite/silver core/shell nanoparticles. Results of HRTEM and NBD patterns confirm core/shell morphology of the obtained nanoparticles. It was found that the composites show diluted magnet-like behavior.

  11. Towards improved photovoltaic conversion using dilute magnetic semiconductors (abstract only)

    International Nuclear Information System (INIS)

    Olsson, Paer; Guillemoles, J-F; Domain, C

    2008-01-01

    Present photovoltaic devices, based on p/n junctions, are limited from first principles to maximal efficiencies of 31% (40% under full solar concentration; Shockley and Queisser 1961 J. Appl. Phys. 32 510). However, more innovative schemes may overcome the Shockley-Queisser limit since the theoretical maximal efficiency of solar energy conversion is higher than 85% (Harder and Wuerfel 2003 Semicond. Sci. Technol. 18 S151). To date, the only practical realization of such an innovative scheme has been multi-junction devices, which at present hold the world record for efficiency at nearly 41% at significant solar concentration (US DOE news site: http://www.energy.gov/news/4503.htm). It has been proposed that one could make use of the solar spectrum in much the same way as the multi-junction devices do but in a single cell, using impurity induced intermediate levels to create gaps of different sizes. This intermediate level semiconductor (ILSC) concept (Green and Wenham 1994 Appl. Phys. Lett. 65 2907; Luque and MartI1997 Phys. Rev. Lett. 78 5014) has a maximal efficiency similar to that of multi-junction devices but suffers from prohibitively large non-radiative recombination rates. We here propose to use a ferromagnetic impurity scheme in order to reduce the non-radiative recombination rates while maintaining the high theoretical maximum efficiency of the ILSC scheme, that is about 46%. Using density functional theory calculations, the electronic and energetic properties of transition metal impurities for a wide range of semiconductors have been analysed. Of the several hundred compounds studied, only a few fulfil the design criteria that we present here. As an example, wide gap AlP is one of the most promising compounds. It was found that inclusion of significant amounts of Mn in AlP induces band structures providing conversion efficiencies potentially close to the theoretical maximum, with an estimated Curie temperature reaching above 100 K

  12. Nuclear relaxation in semiconductors doped with magnetic impurities

    International Nuclear Information System (INIS)

    Mel'nichuk, S.V.; Tovstyuk, N.K.

    1984-01-01

    The temperature and concentration dependences are investigated of the nuclear spin-lattice relaxation time with account of spin diffusion for degenerated and non-degenerated semicon- ductors doped with magnetic impurities. In case of the non-degenerated semiconductor the time is shown to grow with temperature, while in case of degenerated semiconductor it is practically independent of temperature. The impurity concentration growth results in decreasing the spin-lattice relaxation time

  13. Size and diluted magnetic properties of diamond shaped graphene quantum dots: Monte Carlo study

    Science.gov (United States)

    Masrour, R.; Jabar, A.

    2018-05-01

    The magnetic properties of diamond shaped graphene quantum dots have been investigated by varying their sizes with the Monte Carlo simulation. The magnetizations and magnetic susceptibilities have been studied with dilutions x (magnetic atom), several sizes L (carbon atom) and exchange interaction J between the magnetic atoms. The all magnetic susceptibilities have been situated at the transitions temperatures of each parameters. The obtained values increase when increases the values of x, L and J. The effect of exchanges interactions and crystal field on the magnetization has been discussed. The magnetic hysteresis cycles for several dilutions x, sizes L, exchange interactions J and temperatures T. The magnetic coercive increases with increasing the exchange interactions and decreases when the temperatures values increasing.

  14. Interpretation of the spin glass behaviour of diluted magnetic semiconductors below the nearest-neighbour percolation threshold via realistic Monte Carlo simulations

    CERN Document Server

    Karaoulanis, D; Bacalis, N C

    2000-01-01

    We have performed Monte Carlo simulations of magnetic semiconductors above and below the nearest-neighbour percolation threshold (NNPT) using a classical Heisenberg Hamiltonian with up to third nearest-neighbour (nn) interactions. Large clusters were created allowing use of realistically low magnetic fields (10 G). Above NNPT our results, apart from confirming the existing picture of this class of materials, also show that the inclusion of the second and third (nn) interactions increases the frustration, thus making the transition temperature smaller and closer to experiment than calculated via the first nn interactions only. A physically plausible explanation is given. Below NNPT our results strongly support the validity of the hypothesis (D. Karaoulanis, J.P. Xanthakis, C. Papatriantafillou, J. Magn. Magn. Mater. 161 (1996) 231), that the experimentally observed susceptibility is the sum of two contributions: a paramagnetic one due to isolated magnetic clusters, and a spin-glass contribution due to an 'infi...

  15. Unraveling the Origin of Magnetism in Mesoporous Cu-Doped SnO₂ Magnetic Semiconductors.

    Science.gov (United States)

    Fan, Junpeng; Menéndez, Enric; Guerrero, Miguel; Quintana, Alberto; Weschke, Eugen; Pellicer, Eva; Sort, Jordi

    2017-10-25

    The origin of magnetism in wide-gap semiconductors doped with non-ferromagnetic 3d transition metals still remains intriguing. In this article, insights in the magnetic properties of ordered mesoporous Cu-doped SnO₂ powders, prepared by hard-templating, have been unraveled. Whereas, both oxygen vacancies and Fe-based impurity phases could be a plausible explanation for the observed room temperature ferromagnetism, the low temperature magnetism is mainly and unambiguously arising from the nanoscale nature of the formed antiferromagnetic CuO, which results in a net magnetization that is reminiscent of ferromagnetic behavior. This is ascribed to uncompensated spins and shape-mediated spin canting effects. The reduced blocking temperature, which resides between 30 and 5 K, and traces of vertical shifts in the hysteresis loops confirm size effects in CuO. The mesoporous nature of the system with a large surface-to-volume ratio likely promotes the occurrence of uncompensated spins, spin canting, and spin frustration, offering new prospects in the use of magnetic semiconductors for energy-efficient spintronics.

  16. Submillimetre wave spectroscopy of semiconductors in high magnetic fields

    International Nuclear Information System (INIS)

    Maan, J.C.

    1979-01-01

    Two types of cyclotron resonance studies with far infrared radiation and at high magnetic fields in semiconductors are discussed. Firstly, the phenomenon of the change in the static conductivity at cyclotron resonance conditions in pure semiconductors, in this case n-GaAs, is investigated. Secondly, the results of cyclotron resonance experiments in an n-InAs-GaSb superlattice are discussed. (Auth.)

  17. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Rana, Amit Kumar; Kumar, Yogendra; Arjunan, M.S.; Sen, Somaditya; Shirage, Parasharam M., E-mail: pmshirage@iiti.ac.in, E-mail: paras.shirage@gmail.com [Department of Physics, Indian Institute of Technology Indore, Simrol Campus, Khandwa Road, Indore 452020 (India); Centre of Materials Science and Engineering, Indian Institute of Technology Indore, Simrol Campus, Khandwa Road, Indore 452020 (India); J, Aneesh; Adarsh, K. V. [Department of Physics, Indian Institute of Science Education and Research, Bhopal 462023 (India)

    2015-12-07

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips.

  18. Enhancement of two photon absorption with Ni doping in the dilute magnetic semiconductor ZnO crystalline nanorods

    International Nuclear Information System (INIS)

    Rana, Amit Kumar; Kumar, Yogendra; Arjunan, M.S.; Sen, Somaditya; Shirage, Parasharam M.; J, Aneesh; Adarsh, K. V.

    2015-01-01

    In this letter, we have investigated the third-order optical nonlinearities of high-quality Ni doped ZnO nanorods crystallized in wurtzite lattice, prepared by the wet chemical method. In our experiments, we found that the two photon absorption coefficient (β) increases by as much as 14 times, i.e., 7.6 ± 0.4 to 112 ± 6 cm/GW, when the Ni doping is increased from 0% to 10%. The substantial enhancement in β is discussed in terms of the bandgap scaling and Ni doping. Furthermore, we also show that the optical bandgap measured by UV-Vis and photoluminescence spectroscopies, continuously redshift with increasing Ni doping concentration. We envision that the strong nonlinear optical properties together with their dilute magnetic effects, they form an important class of materials for potential applications in magneto-optical and integrated optical chips

  19. Magnetic resonance of semiconductors and their nanostructures basic and advanced applications

    CERN Document Server

    Baranov, Pavel G; Jelezko, Fedor; Wrachtrup, Jörg

    2017-01-01

    This book explains different magnetic resonance (MR) techniques and uses different combinations of these techniques to analyze defects in semiconductors and nanostructures. It also introduces novelties such as single defects MR and electron-paramagnetic-resonance-based methods: electron spin echo, electrically detected magnetic resonance, optically detected magnetic resonance and electron-nuclear double resonance – the designated tools for investigating the structural and spin properties of condensed systems, living matter, nanostructures and nanobiotechnology objects. Further, the authors address problems existing in semiconductor and nanotechnology sciences that can be resolved using MR, and discuss past, current and future applications of MR, with a focus on advances in MR methods. The book is intended for researchers in MR studies of semiconductors and nanostructures wanting a comprehensive review of what has been done in their own and related fields of study, as well as future perspectives.

  20. Transition metal implanted ZnO. A correlation between structure and magnetism

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shengqiang

    2008-07-01

    Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors question the origin of this ferromagnetism, i.e. if the observed ferromagnetism stems from ferromagnetic precipitates rather than from carriermediated magnetic coupling of ionic impurities, as required for a diluted magnetic semiconductor. In this thesis, this question will be answered for transition-metal implanted ZnO single crystals. Magnetic secondary phases, namely metallic Fe, Co and Ni nanocrystals, are formed inside ZnO. They are - although difficult to detect by common approaches of structural analysis - responsible for the observed ferromagnetism. Particularly Co and Ni nanocrystals are crystallographically oriented with respect to the ZnO matrix. Their structure phase transformation and corresponding evolution of magnetic properties upon annealing have been established. Finally, an approach, pre-annealing ZnO crystals at high temperature before implantation, has been demonstrated to sufficiently suppress the formation of metallic secondary phases. (orig.)

  1. Origin of ferromagnetism in diluted magnetic semiconductors; Moegliche Ursachen des Ferromagnetismus verduennter magnetischer Halbleiter

    Energy Technology Data Exchange (ETDEWEB)

    Biegger, E.

    2007-02-14

    In this work Mn-doped Ge single crystals and thin films of the metal doped oxidic semiconductors ZnO and SnO{sub 2} were prepared and investigated in detail. Structural, magnetic, and electronic properties of Mn-doped Ge single crystals (0magnetization [M(T)] measurements performed on the Mn-poor part reveal a ferromagnetic order between 150 and 285 K. X-ray absorption spectroscopy (XAS) at the Mn L{sub 2,3} absorption edge shows that Mn ions in Mn-rich and Mn-poor parts are in the divalent high-spin state. Resonant valence-band photoelectron spectroscopy (ResPES) was performed at the Mn L{sub 2,3} absorption edge for the Mn-poor region. The extracted Mn 3d partial density of states shows a low spectral weight near E{sub F} and a broad feature around 4.8 eV of binding energy which is in good agreement with Mn-rich phase. We identify Mn{sub 11}Ge{sub 8} phase segregation as the most possible origin of ferromagnetism in both Mn-rich and Mn-poor regions of the Mn{sub x}Ge{sub 1-x} samples. Further on we investigated the structural, magnetic and optical properties, as well as the electronic structure of epitaxial Me-doped ZnO and SnO{sub 2} films (Me=Co,Fe; 0.05Magnetization measurements indicate ferromagnetic behavior at low temperature for samples prepared at oxygen-poor conditions whereas the samples prepared at oxygen-rich conditions did not show ferromagnetic behavior corroborating that ferromagnetism in Co-doped ZnO is related to oxygen-related defects. Fe-doped ZnO samples do not show ferromagnetic behaviour at all, although X-ray absorption spectroscopy (XAS) shows that Fe is present as Fe{sup 2+} and Fe{sup 3+}. XAS at the Co L{sub 2

  2. Magnetism in the p-type Monolayer II-VI semiconductors SrS and SrSe

    Science.gov (United States)

    Lin, Heng-Fu; Lau, Woon-Ming; Zhao, Jijun

    2017-01-01

    Using density functional theory calculations, we study the electronic and magnetic properties of the p-type monolayer II-VI semiconductors SrX (X = S,Se). The pristine SrS and SrSe monolayers are large band gap semiconductor with a very flat band in the top valence band. Upon injecting hole uniformly, ferromagnetism emerges in those system in a large range of hole density. By varying hole density, the systems also show complicated phases transition among nonmagnetic semiconductor, half metal, magnetic semiconductor, and nonmagnetic metal. Furthermore, after introducing p-type dopants in SrS and SrSe via substitutionary inserting P (or As) dopants at the S (or Se) sites, local magnetic moments are formed around the substitutional sites. The local magnetic moments are stable with the ferromagnetic order with appreciable Curie temperature. The ferromagnetism originates from the instability of the electronic states in SrS and SrSe with the large density of states at the valence band edge, which demonstrates a useful strategy for realizing the ferromagnetism in the two dimensional semiconductors. PMID:28378761

  3. (Sr{sub 1-x}Na{sub x})(Cd{sub 1-x}Mn{sub x}){sub 2}As{sub 2}: A new charge and spin doping decoupled diluted magnetic semiconductors with CaAl{sub 2}Si{sub 2}-type structure

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Bijuan; Deng, Zheng; Li, Wenmin; Gao, Moran; Zhao, Guoqiang; Yu, Shuang; Wang, Xiancheng; Liu, Qingqing [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Li, Zhi [School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009 (China); Jin, Changqing, E-mail: Jin@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-08-28

    We report the synthesis and characterization of a new bulk diluted ferromagnetic semiconductor via Na and Mn co-doping in SrCd{sub 2}As{sub 2} with a hexagonal CaAl{sub 2}Si{sub 2}-type structure. Together with carrier doping via (Sr,Na) substitution, spin doping via (Cd,Mn) substitution results in ferromagnetic order with Curie temperature of T{sub C} up to 13 K. Negative magnetoresistance is assigned to weak localization at low temperatures, where the magnetization of samples becomes saturated. The hexagonal structure of (Sr{sub 1−x}Na{sub x})(Cd{sub 1−x}Mn{sub x}){sub 2}As{sub 2} can be acted as a promising candidate for spin manipulations owing to its relatively small coercive field of less than 24 Oe.

  4. Physics of semiconductors in high magnetic fields

    CERN Document Server

    Miura, Noboru

    2008-01-01

    This book summarizes most of the fundamental physical phenomena which semiconductors and their modulated structures exhibit in high magnetic fields. Readers can learn not only the basic theoretical background but also the present state of the art from the most advanced data in this rapidly growing research area.

  5. METHODOLOGICAL NOTES: Integrating magnetism into semiconductor electronics

    Science.gov (United States)

    Zakharchenya, Boris P.; Korenev, Vladimir L.

    2005-06-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor—making the hybrid an electronic-write-in and electronic-read-out elementary storage unit.

  6. Field-effect magnetization reversal in ferromagnetic semiconductor quantum wellls

    Czech Academy of Sciences Publication Activity Database

    Lee, B.; Jungwirth, Tomáš; MacDonald, A. H.

    2002-01-01

    Roč. 65, č. 19 (2002), s. 193311-1-193311-4 ISSN 0163-1829 R&D Projects: GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductor quantum wells * magnetization reversal process Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  7. Deep-level defects in semiconductors: studies by magnetic resonance

    International Nuclear Information System (INIS)

    Ammerlaan, C.A.J.

    1983-01-01

    This work is divided into two parts. In the first one, the following topics are discussed: paramagnetic centers in semiconductors, principles of magnetic resonance, spin-Hamiltonian, g-tensor, hyperfine interaction, magnetic resonance spectrometer. In the second part it is dicussed defects studied by magnetic resonance including vacancy and divacancy in silicon, iron in silicon, nitrogen in diamond and antisite defects in III-V compounds. (A.C.A.S.) [pt

  8. Spatially selective hydrogen irradiation of dilute nitride semiconductors: a brief review

    Science.gov (United States)

    Felici, Marco; Pettinari, Giorgio; Biccari, Francesco; Capizzi, Mario; Polimeni, Antonio

    2018-05-01

    We provide a brief survey of the most recent results obtained by performing spatially selective hydrogen irradiation of dilute nitride semiconductors. The striking effects of the formation of stable N–H complexes in these compounds—coupled to the ultrasharp diffusion profile of H therein—can be exploited to tailor the structural (lattice constant) and optoelectronic (energy gap, refractive index, electron effective mass) properties of the material in the growth plane, with a spatial resolution of a few nm. This can be applied to the fabrication of site-controlled quantum dots (QDs) and wires, but also to the realization of the optical elements required for the on-chip manipulation and routing of qubits in fully integrated photonic circuits. The fabricated QDs—which have shown the ability to emit single photons—can also be deterministically coupled with photonic crystal microcavities, proving their inherent suitability to act as integrated light sources in complex nanophotonic devices.

  9. Mechanism of carrier-induced ferromagnetism in diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Takahashi, M.; Furukawa, N.; Kubo, K.

    2004-01-01

    Using the spin-polarized band obtained by applying the dynamical coherent potential approximation to a simple model, we have calculated the magnetization of Ga x Mn 1-x As as a function of the temperature for various values of carrier density. The result is consistent with the experimental observation, supporting the view previously proposed by us that the ferromagnetism is induced by the carriers in the bandtail through double-exchange-like mechanism

  10. Effects of electric field and magnetic induction on spin injection into organic semiconductors

    International Nuclear Information System (INIS)

    Wang, Y.M.; Ren, J.F.; Yuan, X.B.; Dou, Z.T.; Hu, G.C.

    2011-01-01

    Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed. -- Research highlights: → Current polarization in ferromagnetic/organic semiconductor structure is obtained. → Calculations are based on spin-drift-diffusion theory and Ohm's law. → Current polarization is enhanced by tuning magnetic induction and electric fields. → Effects of interfacial resistances and the special carriers are also discussed.

  11. Structural, optical and magnetic properties of cobalt-doped CdSe ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Pure and Co-doped CdSe nanoparticles have been synthesized by hydrothermal technique. The ... Keywords. Nanoparticles; dilute magnetic semiconductor; ferromagnetism. ... dium dodecyl sulfate (SDS) was used as a surfactant in.

  12. Magnetic polarons in a nonequilibrium polariton condensate

    Science.gov (United States)

    Mietki, Paweł; Matuszewski, Michał

    2017-09-01

    We consider a condensate of exciton polaritons in a diluted magnetic semiconductor microcavity. Such a system may exhibit magnetic self-trapping in the case of sufficiently strong coupling between polaritons and magnetic ions embedded in the semiconductor. We investigate the effect of the nonequilibrium nature of exciton polaritons on the physics of the resulting self-trapped magnetic polarons. We find that multiple polarons can exist at the same time, and we derive a critical condition for self-trapping that is different from the one predicted previously in the equilibrium case. Using the Bogoliubov-de Gennes approximation, we calculate the excitation spectrum and provide a physical explanation in terms of the effective magnetic attraction between polaritons, mediated by the ion subsystem.

  13. Resonant inelastic scattering in dilute magnetic semiconductors by x-ray fluorescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lawniczak-Jablonska, K. [Lawrence Berkeley National Lab., CA (United States)]|[Institute of Physics, Warsaw (Poland); Jia, J.J.; Underwood, J.H. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    As modern, technologically important materials have become more complex, element specific techniques have become invaluable in studying the electronic structure of individual components from the system. Soft x-ray fluorescence (SXF) and absorption (SXA) spectroscopies provide a unique means of measuring element and angular momentum density of electron states, respectively, for the valence and conducting bands in complex materials. X-ray absorption and the decay through x-ray emission are generally assumed to be two independent one-photon processes. Recent studies, however have demonstrated that SXF excited near the absorption threshold generate an array of spectral features that depend on nature of materials, particularly on the localization of excited states in s and d-band solids and that these two processes can no be longer treated as independent. Resonant SXF offers thus the new way to study the dynamics of the distribution of electronic valence states in the presence of a hole which is bound to the electron low lying in the conduction band. This process can simulate the interaction between hole-electron pair in wide gap semiconductors. Therefore such studies can help in understanding of transport and optics phenomena in the wide gap semiconductors. The authors report the result of Mn and S L-resonant emission in Zn{sub 1{minus}x}Mn{sub x}S (with x=0.2 and 0.3) and MnS as the energy of exciting radiation is tuned across the Mn and S L{sub 3,2} absorption edge, along with the resonant excited spectra from elemental Mn as a reference.

  14. Evidence of dilute ferromagnetism in rare-earth doped yttrium aluminium garnet

    Energy Technology Data Exchange (ETDEWEB)

    Farr, Warrick G.; Goryachev, Maxim; Le Floch, Jean-Michel; Tobar, Michael E. [ARC Centre of Excellence for Engineered Quantum Systems, University of Western Australia, 35 Stirling Highway, Crawley, Western Australia 6009 (Australia); Bushev, Pavel [Experimentalphysik, Universität des Saarlandes, D-66123 Saarbrücken (Germany)

    2015-09-21

    This work demonstrates strong coupling regime between an erbium ion spin ensemble and microwave hybrid cavity-whispering gallery modes in a yttrium aluminium garnet dielectric crystal. Coupling strengths of 220 MHz and mode quality factors in excess of 10{sup 6} are demonstrated. Moreover, the magnetic response of high-Q modes demonstrates behaviour which is unusual for paramagnetic systems. This behaviour includes hysteresis and memory effects. Such qualitative change of the system's magnetic field response is interpreted as a phase transition of rare earth ion impurities. This phenomenon is similar to the phenomenon of dilute ferromagnetism in semiconductors. The clear temperature dependence of the phenomenon is demonstrated.

  15. Magnetic excitations in intermediate valence semiconductors with singlet ground state

    International Nuclear Information System (INIS)

    Kikoin, K.A.; Mishchenko, A.S.

    1994-01-01

    The explanation of the origin inelastic peaks in magnetic neutron scattering spectra of the mixed-valent semiconductor SmB 6 is proposed. It is shown that the excitonic theory of intermediate valence state not only gives the value of the peak frequency but also explains the unusual angular dependence of intensity of inelastic magnetic scattering and describes the dispersion of magnetic excitations in good agreement with experiment

  16. Low-temperature magnetization of (Ga,Mn)As semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Mašek, Jan; Wang, K. Y.; Edmonds, K. W.; Sawicki, M.; Polini, M.; Sinova, J.; MacDonald, A. H.; Campion, R. P.; Zhao, L.X.; Farley, N.R.S.; Johal, T.K.; van der Laan, G.; Foxon, C. T.; Gallagher, B. L.

    2006-01-01

    Roč. 73, č. 16 (2006), 165205/1-165205/11 ISSN 1098-0121 R&D Projects: GA ČR GA202/05/0575 Grant - others:EPSRC(GB) GR/S81407/01; FENIKS(XE) EC:G5RD-CT-2001-00535; US Department of Energy(US) DE-FG03-02ER45958 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * magnetization Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.107, year: 2006

  17. Magneto-optical Faraday rotation of semiconductor nanoparticles embedded in dielectric matrices.

    Science.gov (United States)

    Savchuk, Andriy I; Stolyarchuk, Ihor D; Makoviy, Vitaliy V; Savchuk, Oleksandr A

    2014-04-01

    Faraday rotation has been studied for CdS, CdTe, and CdS:Mn semiconductor nanoparticles synthesized by colloidal chemistry methods. Additionally these materials were prepared in a form of semiconductor nanoparticles embedded in polyvinyl alcohol films. Transmission electron microscopy and atomic force microscopy analyses served as confirmation of nanocrystallinity and estimation of the average size of the nanoparticles. Spectral dependence of the Faraday rotation for the studied nanocrystals and nanocomposites is correlated with a blueshift of the absorption edge due to the confinement effect in zero-dimensional structures. Faraday rotation spectra and their temperature behavior in Mn-doped nanocrystals demonstrates peculiarities, which are associated with s, p-d exchange interaction between Mn²⁺ ions and band carriers in diluted magnetic semiconductor nanostructures.

  18. A theory for the anisotropic interaction between two substitutional magnetic impurities and the magnetic anisotropic effect in dilute magnetic alloys

    International Nuclear Information System (INIS)

    Satter, M.A.

    1990-08-01

    In this paper, a formalism for studying the anisotropic interaction between two substitutional magnetic impurities and the magnetic anisotropic effect in a dilute noble metal- transition metal magnetic alloy has been developed from relativistic scattering theory. The theoretical development and the computational techniques of this formalism are based on relativistic spin-polarized scattering theory and relativistic band structure frameworks. For studying the magnetic anisotropic effect a convenient ''working'' frame of reference with its axes oriented along the fcc crystal axes is set up. This formalism is applied to study the situation for two Fe impurities in paramagnetic Au hosts. For AuFe dilute alloy, the two impurity site interaction as a function of separation is not oscillatory and the anisotropic effect is found to be less than the two site interaction itself only by an order of magnitude. Apart from the anisotropic coupling of the two impurity spins to the separation vector, for the first time, another weak anisotropic coupling to the crystal axes is also contained in the two site interaction. These anisotropic effects are the results of the relativistic spin-orbit interaction which are incorporated into the formalism. (author). 22 refs, 5 figs

  19. Transverse gradient diffusion in a polydisperse dilute suspension of magnetic spheres during sedimentation

    International Nuclear Information System (INIS)

    Cunha, F R; Couto, H L G

    2008-01-01

    In this work we investigate the pair interaction of magnetic particles in a dilute polydisperse sedimenting suspension. The suspension is composed of magnetic spherical forms of different radii and densities immersed in a Newtonian fluid, settling due to the gravity. When in close contact, the particles may exert on each other a magnetic force due to a permanent magnetization. We restrict our attention to dispersions of micromagnetic composite with negligible Brownian motion. The calculations of the relative particle trajectories are based on direct computations of the hydrodynamic interactions among rigid spheres in the regime of low particle Reynolds number. Depending on the relative importance of the interparticle forces and gravity, the collisions may result in aggregation or simply in a breaking of the particle relative trajectory time reversibility. After summing over all possible encounters, the transverse self-diffusion and down-gradient diffusion coefficients that describe the cross-flow migration of the particles are calculated. Our calculation shows first evidence and the significance of the diffusion process arising from magnetic interactions in dilute non-Brownian suspensions

  20. Transverse gradient diffusion in a polydisperse dilute suspension of magnetic spheres during sedimentation

    Energy Technology Data Exchange (ETDEWEB)

    Cunha, F R; Couto, H L G [Departamento de Engenharia Mecanica, Universidade de Brasilia, Faculdade de Tecnologia, Grupo de Mecanica dos Fluidos de Escoamentos Complexos-VORTEX, Campus Universitario Darcy Ribeiro, 70910-900, Brasilia, DF (Brazil)], E-mail: frcunha@unb.br

    2008-05-21

    In this work we investigate the pair interaction of magnetic particles in a dilute polydisperse sedimenting suspension. The suspension is composed of magnetic spherical forms of different radii and densities immersed in a Newtonian fluid, settling due to the gravity. When in close contact, the particles may exert on each other a magnetic force due to a permanent magnetization. We restrict our attention to dispersions of micromagnetic composite with negligible Brownian motion. The calculations of the relative particle trajectories are based on direct computations of the hydrodynamic interactions among rigid spheres in the regime of low particle Reynolds number. Depending on the relative importance of the interparticle forces and gravity, the collisions may result in aggregation or simply in a breaking of the particle relative trajectory time reversibility. After summing over all possible encounters, the transverse self-diffusion and down-gradient diffusion coefficients that describe the cross-flow migration of the particles are calculated. Our calculation shows first evidence and the significance of the diffusion process arising from magnetic interactions in dilute non-Brownian suspensions.

  1. Comparision between ab-initio and phenomenological modeling of the exchange couplings in diluted magnetic semiconductors: the case of Zn.sub.1-x./sub.Cr.sub.x./sub.Te

    Czech Academy of Sciences Publication Activity Database

    Bouzerar, G.; Bouzerar, R.; Kudrnovský, Josef; Ziman, T.

    2006-01-01

    Roč. 203, č. 11 (2006), s. 2989-2994 ISSN 0031-8965 Institutional research plan: CEZ:AV0Z10100520 Keywords : ab-intio * exchange interactions * Curie temperatures * diluted systems * RPA Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.221, year: 2006

  2. Piezo-voltage control of magnetization orientation in a ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Althammer, M.; Brandlmaier, A.; Gepraegs, S.; Opel, M.; Gross, R. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany); Bihler, C.; Brandt, M.S. [Walter Schottky Institut, Technische Universitaet Muenchen, 85748 Garching (Germany); Schoch, W.; Limmer, W. [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany); Goennenwein, S.T.B.

    2008-06-15

    The possibility to control magnetic properties via electrical fields is investigated in a piezoelectric actuator/ferromagnetic semiconductor thin film hybrid structure. Using anisotropic magnetoresistance techniques, the magnetic anisotropy and the magnetization orientation within the plane of the ferromagnetic film are measured quantitatively. The experiments reveal that the application of an electrical field to the piezoelectric actuator allows to continuously and reversibly rotate the magnetization orientation in the ferromagnet by about 70 . (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Electronic structures and magnetism for carbon doped CdSe: Modified Becke–Johnson density functional calculations

    Energy Technology Data Exchange (ETDEWEB)

    Fan, S.W., E-mail: fansw1129@126.com; Song, T.; Huang, X.N.; Yang, L.; Ding, L.J.; Pan, L.Q.

    2016-09-15

    Utilizing the full potential linearized augment plane wave method, the electronic structures and magnetism for carbon doped CdSe are investigated. Calculations show carbon substituting selenium could induce CdSe to be a diluted magnetic semiconductor. Single carbon dopant could induce 2.00 μ{sub B} magnetic moment. Electronic structures show the long-range ferromagnetic coupling mainly originates from the p–d exchange-like p–p coupling interaction. Positive chemical pair interactions indicate carbon dopants would form homogeneous distribution in CdSe host. The formation energy implies the non-equilibrium fabricated technology is necessary during the samples fabricated. - Highlights: • The C{sub Se} defects could induce the CdSe to be typical diluted magnetic semiconductor. • Electronic structures show ferromagnetism come from p-d exchange-like p-p coupling. • Chemical pair interactions indicate C{sub Se} prefer homogenous distribution in CdSe host.

  4. Hydrogenated Graphene Nanoflakes: Semiconductor to Half-Metal Transition and Remarkable Large Magnetism

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Yungang; Wang, Zhiguo; Yang, Ping; Sun, Xin; Zu, Xiaotao; Gao, Fei

    2012-03-08

    The electronic and magnetic properties of graphene nanoflakes (GNFs) can be tuned by patterned adsorption of hydrogen. Controlling the H coverage from bare GNFs to half hydrogenated and then to fully hydrogenated GNFs, the transformation of small-gap semiconductor {yields} half-metal {yields} wide-gap semiconductor occurs, accompanied by a magnetic {yields} magnetic {yields} nonmagnetic transfer and a nonmagnetic {yields} magnetic {yields} nonmagnetic transfer for triangular and hexagonal nanoflakes, respectively. The half hydrogenated GNFs, associated with strong spin polarization around the Fermi level, exhibit the unexpected large spin moment that is scaled squarely with the size of flakes. The induced spin magnetizations of these nanoflakes align parallel and lead to a substantial collective character, enabling the half hydrogenated GNFs to be spin-filtering flakes. These hydrogenation-dependent behaviors are then used to realize an attractive approach to engineer the transport properties, which provides a new route to facilitate the design of tunable spin devices.

  5. The Toulouse pulsed magnet facility

    International Nuclear Information System (INIS)

    2006-01-01

    The 'Laboratoire National des Champs Magnetiques Pulses' (LNCMP) is an international user facility providing access to pulsed magnetic fields up to and beyond 60 T. The laboratory disposes of 10 magnet stations equipped with long-pulse magnets operating in the 35-60 T range and a short-pulse system reaching magnetic fields in excess of 70 T. The experimental infrastructure includes various high and low-temperature systems ranging from ordinary flow-type cryostats to dilution refrigerators reaching 50 mK, as well as different types of high-pressure cells. Experimental techniques include magnetization, transport, luminescence, IR-spectroscopy and polarimetry. The LNCMP pursues an extensive in-house research program focussing on all technological and scientific aspects of pulsed magnetic fields. Recent technical developments include the implementation of 60 T rapid-cooling coils, an 80 T prototype, a pulsed dipole magnet for optical investigations of dilute matter and a transportable horizontal access magnet for small angle x-ray scattering experiments. Scientific activities cover a variety of domains, including correlated electron systems, magnetism, semiconductors and nanoscience

  6. Electronic structure of the dilute magnetic semiconductor G a1 -xM nxP from hard x-ray photoelectron spectroscopy and angle-resolved photoemission

    Science.gov (United States)

    Keqi, A.; Gehlmann, M.; Conti, G.; Nemšák, S.; Rattanachata, A.; Minár, J.; Plucinski, L.; Rault, J. E.; Rueff, J. P.; Scarpulla, M.; Hategan, M.; Pálsson, G. K.; Conlon, C.; Eiteneer, D.; Saw, A. Y.; Gray, A. X.; Kobayashi, K.; Ueda, S.; Dubon, O. D.; Schneider, C. M.; Fadley, C. S.

    2018-04-01

    We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) G a0.98M n0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between G a0.98M n0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The G a0.98M n0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of G a0.97M n0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012), 10.1038/nmat3450], demonstrating the strong similarity between these two materials. The Mn 2 p and 3 s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.

  7. Simulation of magnetic tunnel junction in ferromagnetic/insulator/semiconductor structure

    Science.gov (United States)

    Kostrov, Alexander I.; Stempitsky, Viktor R.; Kazimirchik, Vladimir N.

    2008-07-01

    In this work, we present a physical model and electrical macromodel for simulation of Magnetic Tunnel Junction (MTJ) effect based on Ferromagnetic/Insulator/Semiconductor (FIS) nanostructure. A modified Brinkman model has been proposed by including the voltage-dependent density of states of the ferromagnetic electrodes in order to explain the bias dependence magnitoresistance. The model takes into account injection of carriers in the semiconductor and Shottky barrier, electron tunneling through thin insulator and spin-transfer torque writing approach in memory cell. These very promising features should constitute the third generation of Magnetoresistive RAM (MRAM). Besides, the model can efficiently be used to design magnetic CMOS circuits. The behavioral macro-model has been developed by means of Verilog-AMS language and implemented on the Cadence Virtuoso platform with Spectre simulator.

  8. Solar energy harvesting by magnetic-semiconductor nanoheterostructure in water treatment technology.

    Science.gov (United States)

    Mahmoodi, Vahid; Bastami, Tahereh Rohani; Ahmadpour, Ali

    2018-03-01

    Photocatalytic degradation of toxic organic pollutants in the wastewater using dispersed semiconductor nanophotocatalysts has a number of advantages such as high activity, cost effectiveness, and utilization of free solar energy. However, it is difficult to recover and recycle nanophotocatalysts since the fine dispersed nanoparticles are easily suspended in waters. Furthermore, a large amount of photocatalysts will lead to color contamination. Thus, it is necessary to prepare photocatalysts with easy separation for the reusable application. To take advantage of high photocatalysis activity and reusability, magnetic photocatalysts with separation function were utilized. In this review, the photocatalytic principle, structure, and application of the magnetic-semiconductor nanoheterostructure photocatalysts under solar light are evaluated. Graphical abstract ᅟ.

  9. A plastic dilution refrigerator in a 35 T magnet

    International Nuclear Information System (INIS)

    Oliveira, N.F.Jr; Bindilatti, V.; Haar, E. ter; Martin, R.V.; McNiff, E.J.Jr.

    1996-01-01

    We have built a plastic dilution refrigerator, small enough to fit in the bore of the 35 T hybrid magnet at MIT. The base temperature at H = 0 was 20 mK, measured with a CMN thermometer. In the field, we used capacitive glass thermometers and Matsushita resistors. All data obtained were consistent with a field independent glass thermometer and a negligible magnetoresistance of the Matsushitas at high fields. The minimum temperature measured at 34 T was 25 mK. The effect of magnet vibrations as well as field sweeps (≅ 1 T/min) corresponded to less than 1 μW heating. We observed that, above 29 T, the temperature gradients existent inside the mixing chamber suddenly disappeared, with the temperature becoming homogeneous from top to bottom. We attribute this fact to the effect of the magnetic forces on the liquid. (author)

  10. Electronic paramagnetic resonance in the Mn In X (X:Te,S) diluted magnetic semiconductor system; Resonancia paramagnetica electronica en el sistema semiconductor magnetico diluido Cd Mn In X (X:Te,S)

    Energy Technology Data Exchange (ETDEWEB)

    Vincent, Bernardo; Betancourt, Luis; Sagredo, Vicente [Universidad de los Andes, Merida (Venezuela). Dept. de Fisica; Alcala, Rafael [Zaragoza Univ. (Spain). Dept. de Fisica de la Materia Condensada

    1997-12-31

    Semiconductor compounds wit the II-III-VI stoichiometry are very interesting materials since they present very good semiconducting characteristics and, along with strong magnetic properties, these II Mn In VI compounds have a great potential as opt and magneto-electronic devices. Among the possible magnetic properties of the materials is the presence of the spin-glass phase. Electron paramagnetic resonance is one of the techniques used to confirm this phase. The chosen crystals were chosen by chemical vapor transport. The absorption lines of these two families with 0.1 x 1 were all Lorentzian in shape and centred at g=2. A large broadening of the resonance line width was observed when lowering the temperature to below 80 K. This behaviour was fitted to the known existing models, and good values of the calculated parameters were obtained (author). 18 refs., 2 figs., 2 tabs.

  11. Ways of providing radiation resistance of magnetic field semiconductor sensors

    CERN Document Server

    Bolshakova, I A; Holyaka, R; Matkovskii, A; Moroz, A

    2001-01-01

    Hall magnetic field sensors resistant to hard ionizing irradiation are being developed for operation under the radiation conditions of space and in charged particle accelerators. Radiation resistance of the sensors is first determined by the properties of semiconductor materials of sensitive elements; we have used microcrystals and thin layers of III-V semiconductors. Applying complex doping by rare-earth elements and isovalent impurities in certain proportions, we have obtained magnetic field sensors resistant to irradiation by fast neutrons and gamma-quanta. Tests of their radiation resistance were carried out at IBR-2 at the Joint Institute for Nuclear Research (Dubna). When exposed to neutrons with E=0.1-13 MeV and intensity of 10 sup 1 sup 0 n cm sup - sup 2 s sup - sup 1 , the main parameter of the sensors - their sensitivity to magnetic fields - changes by no more than 0.1% up to fluences of 10 sup 1 sup 4 n cm sup - sup 2. Further improvement of radiation resistance of sensor materials is expected by ...

  12. Magnetic susceptibility of semiconductor melts

    International Nuclear Information System (INIS)

    Kutvitskij, V.A.; Shurygin, P.M.

    1975-01-01

    The temperature dependences chi of various alloys confirm the existence of cluster formations in molten semiconductors, the stability of these formations in melts being considerably affected by the anion nature. The concentrational dependences of the magnetic susceptibility for all the investigated systems exhibit the diamagnetism maxima corresponding to the compound compositions. Heating the melt causes ''smearing'' the maxima, which is related with the cluster structure dissociation. The existence of the maxima concentrational dependence chi corresponding to BiTe and BiSe is found in the isotherms. The non-linear dependence of chi on the composition shows the absence of a single-valued relation between the phase diagram and the chi-diagram for melts

  13. Concentration dependence of the wings of a dipole-broadened magnetic resonance line in magnetically diluted lattices

    Energy Technology Data Exchange (ETDEWEB)

    Zobov, V. E., E-mail: rsa@iph.krasn.ru [Russian Academy of Sciences, Kirenskii Institute of Physics, Siberian Branch (Russian Federation); Kucherov, M. M. [Siberian Federal University, Institute of Space and Information Technologies (Russian Federation)

    2017-01-15

    The singularities of the time autocorrelation functions (ACFs) of magnetically diluted spin systems with dipole–dipole interaction (DDI), which determine the high-frequency asymptotics of autocorrelation functions and the wings of a magnetic resonance line, are studied. Using the self-consistent fluctuating local field approximation, nonlinear equations are derived for autocorrelation functions averaged over the independent random arrangement of spins (magnetic atoms) in a diamagnetic lattice with different spin concentrations. The equations take into account the specificity of the dipole–dipole interaction. First, due to its axial symmetry in a strong static magnetic field, the autocorrelation functions of longitudinal and transverse spin components are described by different equations. Second, the long-range type of the dipole–dipole interaction is taken into account by separating contributions into the local field from distant and near spins. The recurrent equations are obtained for the expansion coefficients of autocorrelation functions in power series in time. From them, the numerical value of the coordinate of the nearest singularity of the autocorrelation function is found on the imaginary time axis, which is equal to the radius of convergence of these expansions. It is shown that in the strong dilution case, the logarithmic concentration dependence of the coordinate of the singularity is observed, which is caused by the presence of a cluster of near spins whose fraction is small but contribution to the modulation frequency is large. As an example a silicon crystal with different {sup 29}Si concentrations in magnetic fields directed along three crystallographic axes is considered.

  14. Crystal Fields in Dilute Rare-Earth Metals Obtained from Magnetization Measurements on Dilute Rare-Earth Alloys

    DEFF Research Database (Denmark)

    Touborg, P.; Høg, J.

    1974-01-01

    Crystal field parameters of Tb, Dy, and Er in Sc, Y, and Lu are summarized. These parameters are obtained from magnetization measurements on dilute single crystals, and successfully checked by a number of different methods. The crystal field parameters vary unpredictably with the rare-earth solute....... B40, B60, and B66 are similar in Y and Lu. Crystal field parameters for the pure metals Tb, Dy, and Er are estimated from the crystal fields in Y and Lu....

  15. Magnetic diffuse scattering

    International Nuclear Information System (INIS)

    Cable, J.W.

    1987-01-01

    The diffuse scattering of neutrons from magnetic materials provides unique and important information regarding the spatial correlations of the atoms and the spins. Such measurements have been extensively applied to magnetically ordered systems, such as the ferromagnetic binary alloys, for which the observed correlations describe the magnetic moment fluctuations associated with local environment effects. With the advent of polarization analysis, these techniques are increasingly being applied to study disordered paramagnetic systems such as the spin-glasses and the diluted magnetic semiconductors. The spin-pair correlations obtained are essential in understanding the exchange interactions of such systems. In this paper, we describe recent neutron diffuse scattering results on the atom-pair and spin-pair correlations in some of these disordered magnetic systems. 56 refs

  16. Mn-Rich Nanostructures in Ge1-xMnx: Fabrication, Microstructure, and Magnetic Properties

    Directory of Open Access Journals (Sweden)

    Ying Jiang

    2012-01-01

    Full Text Available Magnetic semiconductors have attracted extensive attention due to their novel physical properties as well as the potential applications in future spintronics devices. Over the past decade, tremendous efforts have been made in the diluted magnetic semiconductors (DMS system, with many controversies disentangled but many puzzles unsolved as well. Here in this paper, we summarize recent experimental results in the growth, microstructure and magnetic properties of Ge-based DMSs (mainly Ge1-xMnx, which have been comprehensively researched owing to their compatibility with Si microelectronics. Growth conditions of high-quality, defect-free, and magnetic Ge1-xMnx bulks, thin films, ordered arrays, quantum dots, and nanowires are discussed in detail.

  17. Effects of Temperature on the Microstructure and Magnetic Property of Cr-Doped ZnO DMS Prepared by Hydrothermal Route Assisted by Pulsed Magnetic Fields

    Directory of Open Access Journals (Sweden)

    Shiwei Wang

    2013-01-01

    Full Text Available In the present work, Cr-doped ZnO diluted magnetic semiconductor was synthesized by hydrothermal method under pulsed magnetic fields. The samples were characterized by XRD, SEM, VSM, Raman, and XPS techniques. Results demonstrated that Zn ions in the ZnO crystal lattice were partially displaced by Chromium (III ions. All samples show room temperature ferromagnetism which was enhanced by pulsed magnetic fields. The mechanism of ferromagnetism of Cr-doped ZnO particles was discussed.

  18. Magnetic and transoprt properties of (III, Mn)V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; MacDonald, A. H.

    2003-01-01

    Roč. 104, - (2003), s. 103-112 ISSN 0587-4246 R&D Projects: GA ČR GA202/98/0085 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * magneto-transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.473, year: 2003

  19. Magneto-optical and cyclotron resonance studies of semiconductors and their nanostructures in pulsed high magnetic fields

    International Nuclear Information System (INIS)

    Miura, N.

    1999-01-01

    Full text: We present a review on the recent advances in physics of magneto-optical spectroscopy in the visible range and of infrared cyclotron resonance in pulsed high magnetic fields, which are produced by electromagnetic flux compression up to 500T, by the single-turn coil technique up to 200T or by conventional non-destructive long pulse magnets up to 50T. We discuss the recent results on the spectroscopy of low dimensional excitons in quantum wells and short period superlattices. In very high fields up to 500T, we observed anomalous field dependence of the exciton absorption lines and the 2D - 3D cross-over effects in GaAs/AlAs quantum wells. In GaP/AlP short period superlattices, it was found that the exciton photoluminescence intensity shows a dramatic decrease and the diamagnetic shift was negative when high magnetic fields were applied parallel to the growth direction. We observed also remarkable effects of uniaxial stress, which are ascribed to the cross-over effect between the two inequivalent valleys at the X points. Cyclotron resonance was measured by using various molecular gas lasers as radiation sources in the range 5 - 119 m . We present the results of cyclotron resonance in GaAs/AlGaAs quantum wells with tilted magnetic fields from the growth direction. It was found that the resonant field and the peak intensity show many different features depending on the extent of the Landau level-subband coupling and on the relation between the photon energy and the barrier height. A large hysteresis was observed between the rising and the falling sweeps of the magnetic field, when the cyclotron resonance energy became comparable with the subband spacing. In a diluted magnetic semiconductor CdFeS, we observed anomalous temperature dependence of the effective mass, suggestive of the magnetic polaron effect

  20. Magneto-optical and transport studies of ZnO-based dilute magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Behan, A.J. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Neal, J.R. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom)]. E-mail: J.R.Neal@Sheffield.ac.uk; Ibrahim, R.M. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Mokhtari, A. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Ziese, M. [Universitaet Leipzig, Fakultaet fuer Physik und Geowissenschaften, Abteilung Supra leitung und Magnetismus, Linnestrasse 5, 04103 Leipzig (Germany); Blythe, H.J. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Fox, A.M. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Gehring, G.A. [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom)

    2007-03-15

    Thin film samples of ZnO doped with V were grown on sapphire substrates by pulsed laser deposition (PLD). The magnetization was measured by SQUID magnetometry and the films were found to be ferromagnetic at room temperature. The transmission, Faraday rotation and magnetic circular dichroism were measured as a function of frequency at room temperature over an energy range of 1.5-4.0 eV and carrier concentrations were determined from Hall effect measurements. Clear magneto-optical signals that are ferromagnetic in origin were observed at the ZnO band edge and the optimal conditions for observing large ferromagnetic magneto-optic signals are discussed.

  1. Evidence for molecular N2 bubble formation in a (Ga,Fe)N magnetic semiconductor

    DEFF Research Database (Denmark)

    Kovács, András; Schaffer, B.; Moreno, M. S.

    2011-01-01

    Fe-doped GaN semiconductors are of interest for combining the properties of semiconductors and magnetic materials [1]. Depending on the growth temperature used, Fe can either be distributed homogenously in the GaN host lattice or it can accumulate in the form of Fe-N nanocrystals. As a result of ...

  2. 119Sn Moessbauer spectroscopy in the magnetically diluted Heusler-type systems

    International Nuclear Information System (INIS)

    Ruebenbauer, K.

    1981-01-01

    119 Sn Moessbauer investigations of the ferromagnetically diluted Nisub(2)Mnsub(x)Bsub(1-x)Sn(B=Ti, V) and Pdsub(2)Mnsub(x)Vsub(1-x)Sn Heusler-type systems have been performed and the results are reviewed and discussed. It has been found that distributions of the transferred hyperfine magnetic field as seen by a tin nucleus are very sensitive for a type of the local magnetic interaction in these simple ferromagnets, especially when studied versus the sample temperature. This sensitivity allows to reach some conclusions about the coupling mechanism between localised manganese magnetic moments. Namely, it is concluded that the interaction beyond the second neighbour shell is practically irrelevant for the magnetic ordering process. This very fact means that the free electron approach to the calculation of exchange integrals can not be applied for these particular systems. (Author)

  3. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    International Nuclear Information System (INIS)

    Sreelekha, N.; Subramanyam, K.; Amaranatha Reddy, D.; Murali, G.; Ramu, S.; Rahul Varma, K.; Vijayalakshmi, R.P.

    2016-01-01

    Highlights: • Cu_1_−_xCo_xS nanoparticles were synthesized via chemical co-precipitation method. • Structural, band gap, magnetization and photocatalysis studies were carried out. • All the doped samples exhibited intrinsic room temperature ferromagnetism. • Effect of magnetic properties on photocatalytic activity was analyzed. • CuS:Co nanoparticles may find applications in photocatalytic and spintronic devices. - Abstract: Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV–vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  4. Structural, optical, magnetic and photocatalytic properties of Co doped CuS diluted magnetic semiconductor nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sreelekha, N.; Subramanyam, K. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Department of Physics, Raghu Engineering College, Visakhapatnam, Andrapradesh 531162 (India); Amaranatha Reddy, D. [Department of Chemistry and Chemical Institute for Functional Materials, Pusan National University, Busan 609735 (Korea, Republic of); Murali, G. [Department of BIN Fusion Technology & Department of Polymer-Nano Science and Technology, Chonbuk National University, Jeonju, Jeonbuk (Korea, Republic of); Ramu, S. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Rahul Varma, K. [Department of Mechanical Engineering, University of California, Berkeley (United States); Vijayalakshmi, R.P., E-mail: vijayaraguru@gmail.com [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India)

    2016-08-15

    Highlights: • Cu{sub 1−x}Co{sub x}S nanoparticles were synthesized via chemical co-precipitation method. • Structural, band gap, magnetization and photocatalysis studies were carried out. • All the doped samples exhibited intrinsic room temperature ferromagnetism. • Effect of magnetic properties on photocatalytic activity was analyzed. • CuS:Co nanoparticles may find applications in photocatalytic and spintronic devices. - Abstract: Pristine and Co doped covellite CuS nanoparticles were synthesized in aqueous solution by facile chemical co-precipitation method with Ethylene Diamine Tetra Acetic Acid (EDTA) as a stabilizing agent. EDAX measurements confirmed the presence of Co in the CuS host lattice. Hexagonal crystal structure of pure and Co doped CuS nanoparticles were authenticated by XRD patterns. TEM images indicated that sphere-shape of nanoparticles through a size ranging from 5 to 8 nm. The optical absorption edge moved to higher energies with increase in Co concentration as indicated by UV–vis spectroscopy. Magnetic measurements revealed that bare CuS sample show sign of diamagnetic character where as in Co doped nanoparticles augmentation of room temperature ferromagnetism was observed with increasing doping precursor concentrations. Photocatalytic performance of the pure and Co doped CuS nanoparticles were assessed by evaluating the degradation rate of rhodamine B solution under sun light irradiation. The 5% Co doped CuS nanoparticles provide evidence for high-quality photocatalytic activity.

  5. In-plane magnetic anisotropy and temperature dependence of switching field in (Ga, Mn) as ferromagnetic semiconductors.

    Science.gov (United States)

    Kamara, S; Terki, F; Dumas, R; Dehbaoui, M; Sadowski, J; Galéra, R M; Tran, Q-H; Charar, S

    2012-06-01

    We explore the magnetic anisotropy of GaMnAs ferromagnetic semiconductor by Planar Hall Effect (PHE) measurements. Using low magnitude of applied magnetic field (i.e., when the magnitude H is smaller than both cubic Hc and uniaxial Hu anisotropy field), we have observed various shapes of applied magnetic field direction dependence of Planar Hall Resistance (PHR). In particular, in two regions of temperature. At T Tc/2 the "zigzag-shape" signal of PHR. They reflect different magnetic anisotropy and provide information about magnetization reversal process in GaMnAs ferromagnetic semiconductor. The theoretical model calculation of PHR based on the free energy density reproduces well the experimental data. We report also the temperature dependence of anisotropy constants and magnetization orientations. The transition of easy axis from biaxial to uniaxiale axes has been observed and confirmed by SQUID measurements.

  6. Self-bound droplets of a dilute magnetic quantum liquid

    Science.gov (United States)

    Schmitt, Matthias; Wenzel, Matthias; Böttcher, Fabian; Ferrier-Barbut, Igor; Pfau, Tilman

    2016-11-01

    Self-bound many-body systems are formed through a balance of attractive and repulsive forces and occur in many physical scenarios. Liquid droplets are an example of a self-bound system, formed by a balance of the mutual attractive and repulsive forces that derive from different components of the inter-particle potential. It has been suggested that self-bound ensembles of ultracold atoms should exist for atom number densities that are 108 times lower than in a helium droplet, which is formed from a dense quantum liquid. However, such ensembles have been elusive up to now because they require forces other than the usual zero-range contact interaction, which is either attractive or repulsive but never both. On the basis of the recent finding that an unstable bosonic dipolar gas can be stabilized by a repulsive many-body term, it was predicted that three-dimensional self-bound quantum droplets of magnetic atoms should exist. Here we report the observation of such droplets in a trap-free levitation field. We find that this dilute magnetic quantum liquid requires a minimum, critical number of atoms, below which the liquid evaporates into an expanding gas as a result of the quantum pressure of the individual constituents. Consequently, around this critical atom number we observe an interaction-driven phase transition between a gas and a self-bound liquid in the quantum degenerate regime with ultracold atoms. These droplets are the dilute counterpart of strongly correlated self-bound systems such as atomic nuclei and helium droplets.

  7. Structural, optical, and magnetic properties of polycrystalline Co-doped TiO2 synthesized by solid-state method

    International Nuclear Information System (INIS)

    Bouaine, Abdelhamid; Schmerber, G.; Ihiawakrim, D.; Derory, A.

    2012-01-01

    Highlights: ► Influence of Co doping on the TiO 2 tetragonal structure. ► Decrease of the energy band gap after doping with Co atoms. ► Appearance of ferromagnetism in Co-doped TiO 2 diluted magnetic semiconductors. - Abstract: We have used a solid-state method to synthesize polycrystalline Co-doped TiO 2 diluted magnetic semiconductors (DMSs) with Co concentrations of 0, and 0.5 at.%. X-ray diffraction patterns reveal that Co doped TiO 2 crystallizes in the rutile tetragonal structure with no additional peaks. Transmission electron microscopy (TEM) did not indicate the presence of magnetic parasitic phases and confirmed that Co ions are uniformly distributed inside the samples. Optical absorbance measurements showed an energy band gap which decreases after doping with the Co atoms into the TiO 2 matrix. Magnetization measurements revealed a paramagnetic behavior for the as-prepared Co-doped TiO 2 and a ferromagnetic behavior for the same samples after annealed under a mixture of H 2 /N 2 atmosphere.

  8. What are the mesoscopic magnetic inhomogeneities in the dilute PdFeMn alloy? Polarized neutron study

    Energy Technology Data Exchange (ETDEWEB)

    Gordeev, G.; Axelrod, L.; Zabenkin, V.; Lazebnik, I.; Grigoriev, S.; Wagner, V.; Eckerlebe, H

    2003-07-01

    The 3D analysis of neutron depolarization was carried out for different thermomagnetic treatment of the dilute PdFeMn alloy versus temperature and magnetic field applied in magnetizing/demagnetizing cycles. Both the macroscopic magnetization and the mean fluctuation of local magnetization behavior were subtracted from experimental data. A complicated behavior of the latter was observed. The hysteresis of local magnetization fluctuations is found out but that of macroscopic magnetization is practically absent. The effort to apply the simple model for the description of magnetic inhomogeneities was made in order to understand the mesostructure of this alloy.

  9. Electric-field controlled ferromagnetism in MnGe magnetic quantum dots

    Directory of Open Access Journals (Sweden)

    Faxian Xiu

    2011-03-01

    Full Text Available Electric-field control of ferromagnetism in magnetic semiconductors at room temperature has been actively pursued as one of the important approaches to realize practical spintronics and non-volatile logic devices. While Mn-doped III-V semiconductors were considered as potential candidates for achieving this controllability, the search for an ideal material with high Curie temperature (Tc>300 K and controllable ferromagnetism at room temperature has continued for nearly a decade. Among various dilute magnetic semiconductors (DMSs, materials derived from group IV elements such as Si and Ge are the ideal candidates for such materials due to their excellent compatibility with the conventional complementary metal-oxide-semiconductor (CMOS technology. Here, we review recent reports on the development of high-Curie temperature Mn0.05Ge0.95 quantum dots (QDs and successfully demonstrate electric-field control of ferromagnetism in the Mn0.05Ge0.95 quantum dots up to 300 K. Upon the application of gate-bias to a metal-oxide-semiconductor (MOS capacitor, the ferromagnetism of the channel layer (i.e. the Mn0.05Ge0.95 quantum dots was modulated as a function of the hole concentration. Finally, a theoretical model based upon the formation of magnetic polarons has been proposed to explain the observed field controlled ferromagnetism.

  10. Spin polarization of a non-magnetic high g-factor semiconductor at low magnetic field

    International Nuclear Information System (INIS)

    Lee, J.; Back, J.; Kim, K.H.; Kim, S.U.; Joo, S.; Rhie, K.; Hong, J.; Shin, K.; Lee, B.C.; Kim, T.

    2007-01-01

    We have studied the spin polarization of HgCdTe by measuring Shubnikov-de Haas oscillations. The magnetic field have been applied in parallel and perpendicular to the current. Relatively long spin relaxation time was observed since only spin conserved transition is allowed by selection rules. The electronic spin is completely polarized when the applied magnetic field is larger than 0.5 Tesla, which can be easily generated by micromagnets deposited on the surface of the specimen. Thus, the spin-manipulation such as spin up/down junction can be realized with this semiconductor. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Local Structure and Magnetism of (Ga,Mn)As

    CERN Document Server

    AUTHOR|(CDS)2093111; Temst, Kristiaan

    Throughout the years, dilute magnetic semiconductors (DMS) have emerged as promising materials for semiconductor-based spintronics. In particular, (Ga,Mn)As has become the model system in which to explore the physics of carrier-mediated ferromagnetism in semiconductors and the associated spintronic phenomena, with a number of interesting functionalities and demonstrated proof-of-concept devices. It constitutes the perfect example of how the magnetic behavior of DMS materials is strongly influenced by local structure. In this thesis, we address key aspects of the interplay between local structure and ferromagnetism of (Ga,Mn)As. We unambiguously identify the lattice site occupied by interstitial Mn as the tetrahedral interstitial site with As nearest neighbors T(As). We show, furthermore, that the T(As) is the most energetically favorable site regardless of the interstitial atom forming or not complexes with substitutional Mn. We also evaluate the thermal stability of both interstitial and substitutional Mn si...

  12. Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

    International Nuclear Information System (INIS)

    Povzner, A.A.; Volkov, A.G.

    2017-01-01

    Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

  13. Influence of voltage on magnetization of ferromagnetic semiconductors with colossal magnetoresistance

    Energy Technology Data Exchange (ETDEWEB)

    Povzner, A.A., E-mail: a.a.povzner@urfu.ru; Volkov, A.G., E-mail: agvolkov@yandex.ru

    2017-06-15

    Graphical abstract: We investigate nonequilibrium states of strongly correlated electron subsystem of lanthanum manganite, resulting in an external electric field. It is shown that the Joule heat leads to localization of electrons. As result, electric resistance, magnetization and other characteristics of the electronic system are depending on the applied voltage. This leads to the formation of the bistable state of the electronic system in the vicinity of the Curie point in an external electric field. This manifests itself in non-linear current-voltage characteristics of these substances, and should lead to oscillations of the magnetization and current. - Abstract: The nonequilibrium processes of “self-heating” arising during the flow of electric current are studied for ferromagnetic semiconductors with colossal magnetoresistance near the Curie temperature. These processes lead to the emergence of “hot” paramagnons and the destruction of ferromagnetic order. The solution to the heat balance equation takes into account the temperature dependence of the electrical conductivity caused by Anderson localization of electrons due to their scattering on magnetic inhomogeneities. Description of delocalized electrons subsystem takes into account the spin-flip processes leading to the double exchange. At that, the value of the Anderson percolation threshold and the double exchange depends on the amplitude of spin fluctuations. It was found that N-shaped current-voltage characteristics and hysteresis dependencies of magnetization on the voltage arise in a steady state due to the emergence of “hot” (by internal sample temperature) semiconductor paramagnetic phase. It is shown that the occurrence of self-oscillations of current and magnetization there may be.

  14. Optical characterisation of III-V nitride-based multiphase and diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Wegscheider, M.

    2009-01-01

    The present work is devoted to the investigation of the optical properties of transition metal doped Gallium nitride. The Gallium nitride layers are epitaxially grown in a full metalorganic chemical vapour deposition process whereas the transition metals iron or manganese as well as the n and p-type dopants silicon and magnesium are incorporated simultaneously. Background and driving force of the realization of such material systems is basically the evocation of ferromagnetic spin alignment where free carriers ensure the correspondence between the localized spin state provided by the metal ions. The production of completely new devices for semiconductor industries based on the possibility to switch on or off the ferrimagnetic alignment by changing the free carrier concentration can be expected in the near future. In this context photoluminescence studies in the ultraviolet and mid infrared spectral range at temperatures between the liquid helium point and room temperature at atmospheric pressure were made. These measurements basically provide information on optical transitions between the conduction and valence band and deep defects as well as on crystal field forced transitions within the d-orbitals of the metal ion involved. In this context valuable knowledge could have been gained on doping concentrations, growth fashions and parameters, formation of secondary phases as well as on the doping efficiency and incorporation sites of the metal atoms. (author) [de

  15. Optical third harmonic generation in the magnetic semiconductor EuSe

    Science.gov (United States)

    Lafrentz, M.; Brunne, D.; Kaminski, B.; Pavlov, V. V.; Pisarev, R. V.; Henriques, A. B.; Yakovlev, D. R.; Springholz, G.; Bauer, G.; Bayer, M.

    2012-01-01

    Third harmonic generation (THG) has been studied in europium selenide EuSe in the vicinity of the band gap at 2.1-2.6 eV and at higher energies up to 3.7 eV. EuSe is a magnetic semiconductor crystalizing in centrosymmetric structure of rock-salt type with the point group m3m. For this symmetry the crystallographic and magnetic-field-induced THG nonlinearities are allowed in the electric-dipole approximation. Using temperature, magnetic field, and rotational anisotropy measurements, the crystallographic and magnetic-field-induced contributions to THG were unambiguously separated. Strong resonant magnetic-field-induced THG signals were measured at energies in the range of 2.1-2.6 eV and 3.1-3.6 eV for which we assign to transitions from 4f7 to 4f65d1 bands, namely involving 5d(t2g) and 5d(eg) states.

  16. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

  17. Control of hole localization in magnetic semiconductors by axial strain

    Science.gov (United States)

    Raebiger, Hannes; Bae, Soungmin; Echeverría-Arrondo, Carlos; Ayuela, Andrés

    2018-02-01

    Mn and Fe-doped GaN are widely studied prototype systems for hole-mediated magnetic semiconductors. The nature of the hole states around the Mn and Fe impurities, however, remains under debate. Our self-interaction corrected density-functional calculations show that the charge neutral Mn 0 and positively charged Fe+ impurities have symmetry-broken d5+h ground states, in which the hole is trapped by one of the surrounding N atoms in a small polaron state. We further show that both systems also have a variety of other d5+h configurations, including symmetric, delocalized states, which may be stabilized by axial strain. This finding opens a pathway to promote long-range hole-mediated magnetic interactions by strain engineering and clarifies why highly strained thin-films samples often exhibit anomalous magnetic properties.

  18. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    International Nuclear Information System (INIS)

    Chang-Hwan Kim

    2003-01-01

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms

  19. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang-Hwan [Iowa State Univ., Ames, IA (United States)

    2003-01-01

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

  20. High blocking temperature in SnO{sub 2} based super-paramagnetic diluted magnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Mounkachi, O., E-mail: o.mounkachi@mascir.com [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Salmani, E. [LMPHE, associé au CNRST (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); El Moussaoui, H. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Masrour, R. [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, Safi (Morocco); Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Hamedoun, M. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); Ez-Zahraouy, H. [LMPHE, associé au CNRST (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble cedex 9 (France); Benyoussef, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE, associé au CNRST (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco)

    2014-11-25

    Highlights: • Simple doping, (Sn,Fe)O{sub 2} exhibits a soft ferromagnetism at low temperature. • High blocking temperature was observed for Cu doped (Sn,Fe)O{sub 2} nanocrystalline. • Experimental results are confirmed by ab initio calculations. - Abstract: (Fe,Cu)-doped SnO{sub 2} nanocrystals was synthesized using the co-precipitation method. Magnetic Properties Measurement System (MPMS) revealed that for simple doping, Fe-doped SnO{sub 2} soft ferromagnetism at low temperature appears, while the ferromagnetic phase is stable at temperature higher than room temperature for Cu co-doping element. The ferromagnetism is significantly enhanced by the Cu addition to Fe-doped SnO{sub 2}, according to the ZFC and FC magnetizations and the hysteresis loops. The evidences for the existence of superparamagnetism are characterized and high blocking temperature super-paramagnetism in (Fe,Cu)-doped SnO{sub 2} nanocrystals was observed. Based on first-principles calculations, we have investigated electronic structures and magnetic properties of Fe-doped SnO{sub 2} and (Fe,Cu)-doped SnO{sub 2} with and without defect with LDA and LDA-SIC approximations. The results suggest that the oxygen vacancies (V{sub O}) play a critical role in the activation of ferromagnetism in Fe doped SnO{sub 2}. For (Fe,Cu)-doped SnO{sub 2} the results exhibit that Cu strongly influences on the magnetic properties of these doped systems which are in good agreement with the experimental observations. Electronic structure show that the presence of Cu promote the ferromagnetic bound magnetic polaron interaction through the carriers introduce by d (Cu)

  1. Periodic multilayer magnetized cold plasma containing a doped semiconductor

    Science.gov (United States)

    Nayak, Chittaranjan; Saha, Ardhendu; Aghajamali, Alireza

    2018-02-01

    The present work is to numerically investigate the properties of the defect mode in a one-dimensional photonic crystal made of magnetized cold plasma, doped by semiconductor. The defect mode of such kind of multilayer structure is analyzed by applying the character matrix method to each individual layer. Numerical results illustrate that the defect mode frequency can be tuned by varying the external magnetic field, the electron density, and the thickness of the defect layer. Moreover, the behavior of the defect mode was found to be quite interesting when study the oblique incidence. It was found that for both right- and left-hand polarized transversal magnetic waves, the defect mode of the proposed defective structure disappears when the angle of incidence is larger than a particular oblique incidence. For the left-hand polarized transversal electric wave, however, an additional defect mode was noticed. The results lead to some new information concerning the designing of new types of tunable narrowband microwave filters.

  2. Structural, optical, and magnetic properties of polycrystalline Co-doped TiO{sub 2} synthesized by solid-state method

    Energy Technology Data Exchange (ETDEWEB)

    Bouaine, Abdelhamid, E-mail: abdelhamidfethi@yahoo.fr [Laboratoire d' Etude des Materiaux (LEM), Departement de Physique, Faculte des Sciences Exactes et des Sciences de la Nature et de la vie, Universite de Jijel, cite Oued-Aissa, B.P 98, Jijel 18000 (Algeria); Institut de Physique et Chimie des Materiaux de Strasbourg (IPCMS), UMR 7504 CNRS - UdS, 23 rue du Loess, B.P. 43, 67034 Strasbourg Cedex 2 (France); Schmerber, G.; Ihiawakrim, D.; Derory, A. [Institut de Physique et Chimie des Materiaux de Strasbourg (IPCMS), UMR 7504 CNRS - UdS, 23 rue du Loess, B.P. 43, 67034 Strasbourg Cedex 2 (France)

    2012-11-01

    Highlights: Black-Right-Pointing-Pointer Influence of Co doping on the TiO{sub 2} tetragonal structure. Black-Right-Pointing-Pointer Decrease of the energy band gap after doping with Co atoms. Black-Right-Pointing-Pointer Appearance of ferromagnetism in Co-doped TiO{sub 2} diluted magnetic semiconductors. - Abstract: We have used a solid-state method to synthesize polycrystalline Co-doped TiO{sub 2} diluted magnetic semiconductors (DMSs) with Co concentrations of 0, and 0.5 at.%. X-ray diffraction patterns reveal that Co doped TiO{sub 2} crystallizes in the rutile tetragonal structure with no additional peaks. Transmission electron microscopy (TEM) did not indicate the presence of magnetic parasitic phases and confirmed that Co ions are uniformly distributed inside the samples. Optical absorbance measurements showed an energy band gap which decreases after doping with the Co atoms into the TiO{sub 2} matrix. Magnetization measurements revealed a paramagnetic behavior for the as-prepared Co-doped TiO{sub 2} and a ferromagnetic behavior for the same samples after annealed under a mixture of H{sub 2}/N{sub 2} atmosphere.

  3. Magnetization study of interlayer exchange in semiconductor EuS-PbS ferromagnetic wedge multilayers

    International Nuclear Information System (INIS)

    Kowalczyk, L.; Osinniy, V.; Chernyshova, M.; Dziawa, P.; Boratynski, A.; Story, T.; Smits, C.J.P.; Swagten, H.J.M.; Sipatov, A.Yu.; Volobuev, V.V.

    2006-01-01

    Interlayer coupling was experimentally studied in semiconductor EuS-PbS ferromagnetic superlattice wedge structures grown on KCl (0 0 1) substrates with the wedges covering the semiconductor nonmagnetic PbS spacer layer thickness from 0.3 to 6 nm. Structural parameters of the wedges were examined by X-ray diffraction analysis of EuS-PbS superlattice period. Measurements of magnetic hysteresis loops of EuS-PbS structures were performed by both SQUID (for small terminal parts of the wedge) and MOKE (magneto-optical analysis along the wedge) magnetometry. A strong decrease of magnetic remanence and an increase of saturation field observed for EuS-PbS structures with the PbS spacer thickness decreasing below about 1.5 nm is discussed in terms of the influence of antiferromagnetic interlayer coupling

  4. One phonon resonant Raman scattering in semiconductor quantum wires: Magnetic field effect

    Energy Technology Data Exchange (ETDEWEB)

    Betancourt-Riera, Re., E-mail: rbriera@posgrado.cifus.uson.mx [Instituto Tecnologico de Hermosillo, Avenida Tecnologico S/N, Colonia Sahuaro, C.P. 83170, Hermosillo, Sonor, (Mexico); Departamento de Investigacion en Fisica, Universidad de Sonora, Apartado Postal 5-088, C.P. 83190, Hermosillo, Sonora (Mexico); Betancourt-Riera, Ri. [Instituto Tecnologico de Hermosillo, Avenida Tecnologico S/N, Colonia Sahuaro, C.P. 83170, Hermosillo, Sonora (Mexico); Nieto Jalil, J.M. [Tecnologico de Monterrey-Campus Sonora Norte, Bulevar Enrique Mazon Lopez No. 965, C.P. 83000, Hermosillo, Sonora (Mexico); Riera, R. [Departamento de Investigacion en Fisica, Universidad de Sonora, Apartado Postal 5-088, C.P. 83190, Hermosillo, Sonora (Mexico)

    2013-02-01

    We have developed a theory of one phonon resonant Raman scattering in a semiconductor quantum wire of cylindrical geometry in the presence of an external magnetic field distribution, parallel to the cylinder axis. The effect of the magnetic field in the electron and hole states, and in the Raman scattering efficiency, is determinate. We consider the electron-phonon interaction using a Froehlich-type Hamiltonian, deduced for the case of complete confinement phonon modes by Comas and his collaborators. We also assume T=0 K, a single parabolic conduction and valence bands. The spectra are discussed for different magnetic field values and the selection rules for the processes are also studied.

  5. Induced Magnetic Anisotropy in Liquid Crystals Doped with Resonant Semiconductor Nanoparticles

    Directory of Open Access Journals (Sweden)

    Vicente Marzal

    2016-01-01

    Full Text Available Currently, there are many efforts to improve the electrooptical properties of liquid crystals by means of doping them with different types of nanoparticles. In addition, liquid crystals may be used as active media to dynamically control other interesting phenomena, such as light scattering resonances. In this sense, mixtures of resonant nanoparticles hosted in a liquid crystal could be a potential metamaterial with interesting properties. In this work, the artificial magnetism induced in a mixture of semiconductor nanoparticles surrounded by a liquid crystal is analyzed. Effective magnetic permeability of mixtures has been obtained using the Maxwell-Garnett effective medium theory. Furthermore, permeability variations with nanoparticles size and their concentration in the liquid crystal, as well as the magnetic anisotropy, have been studied.

  6. Voltage-controlled spin selection in a magnetic resonant tunneling diode.

    Science.gov (United States)

    Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

    2003-06-20

    We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

  7. Excitonic pathway to photoinduced magnetism in colloidal nanocrystals with nonmagnetic dopants.

    Science.gov (United States)

    Pinchetti, Valerio; Di, Qiumei; Lorenzon, Monica; Camellini, Andrea; Fasoli, Mauro; Zavelani-Rossi, Margherita; Meinardi, Francesco; Zhang, Jiatao; Crooker, Scott A; Brovelli, Sergio

    2018-02-01

    Electronic doping of colloidal semiconductor nanostructures holds promise for future device concepts in optoelectronic and spin-based technologies. Ag + is an emerging electronic dopant in III-V and II-VI nanostructures, introducing intragap electronic states optically coupled to the host conduction band. With its full 4d shell Ag + is nonmagnetic, and the dopant-related luminescence is ascribed to decay of the conduction-band electron following transfer of the photoexcited hole to Ag + . This optical activation process and the associated modification of the electronic configuration of Ag + remain unclear. Here, we trace a comprehensive picture of the excitonic process in Ag-doped CdSe nanocrystals and demonstrate that, in contrast to expectations, capture of the photohole leads to conversion of Ag + to paramagnetic Ag 2+ . The process of exciton recombination is thus inextricably tied to photoinduced magnetism. Accordingly, we observe strong optically activated magnetism and diluted magnetic semiconductor behaviour, demonstrating that optically switchable magnetic nanomaterials can be obtained by exploiting excitonic processes involving nonmagnetic impurities.

  8. Magnetic properties of the semimagnetic semiconductor Zn0.15Mn0.85Ga2Se4

    International Nuclear Information System (INIS)

    Cadenas, Ruben; Perez, Flor V.; Quintero, Miguel; Quintero, Eugenio; Tovar, Rafael; Morocoima, Manuel; Gonzalez, Jesus; Bocaranda, P.; Ruiz, J.; Broto, J.M.; Rakoto, H.

    2007-01-01

    We report on the magnetic measurements of the semimagnetic semiconductor Zn 0.15 Mn 0.85 Ga 2 Se 4 (ZMGSe). The DC susceptibility and high magnetic field indicate that the ZMGSe orders antiferromagnetically at T∼6 K and undergoes into a spin-flop phase below this temperature. Arrott plots and magnetic entropy changes were used to characterize the order of the transitions

  9. Effects of dilution on the magnetic ordering of a two-dimensional lattice of dipolar magnets

    International Nuclear Information System (INIS)

    Patchedjiev, S M; Whitehead, J P; De'Bell, K

    2005-01-01

    Monte Carlo simulations are used to study the effects of dilution by random vacancies on the phenomenon of order arising from disorder in an ultrathin magnetic film. At very low concentrations of vacancies, both the collinear ordered phase observed in the undiluted system and the microvortex state are observed, and the boundary on which the reorientation transition between these states occurs is found to be consistent with the predictions of earlier work. However, even at vacancy densities as low as 0.5% there is evidence that the vacancies result in a energy landscape with a number of very nearly degenerate minima

  10. Electronic and magnetic properties of SnS2 monolayer doped with 4d transition metals

    Science.gov (United States)

    Xiao, Wen-Zhi; Xiao, Gang; Rong, Qing-Yan; Chen, Qiao; Wang, Ling-Ling

    2017-09-01

    We investigate the electronic structures and magnetic properties of SnS2 monolayers substitutionally doped with 4-d transition-metal through systematic first principles calculations. The doped complexes exhibit interesting electronic and magnetic behaviors, depending on the interplay between crystal field splitting, Hund's rule, and 4d levels. The system doped with Y is nonmagnetic metal. Both the Zr- and Pd-doped systems remain nonmagnetic semiconductors. Doping results in half-metallic states for Nb-, Ru-, Rh-, Ag, and Cd doped cases, and magnetic semiconductors for systems with Mo and Tc dopants. In particular, the Nb- and Mo-doped systems display long-ranged ferromagnetic ordering with Curie temperature above room temperature, which are primarily attributable to the double-exchange mechanism, and the p-d/p-p hybridizations, respectively. Moreover, The Mo-doped system has excellent energetic stability and flexible mechanical stability, and also possesses remarkable dynamic and thermal (500 K) stability. Our studies demonstrate that Nb- and Mo-doped SnS2 monolayers are promising candidates for preparing 2D diluted magnetic semiconductors, and hence will be a helpful clue for experimentalists.

  11. Structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy

    Science.gov (United States)

    Kanzyuba, Vasily; Dong, Sining; Liu, Xinyu; Li, Xiang; Rouvimov, Sergei; Okuno, Hanako; Mariette, Henri; Zhang, Xueqiang; Ptasinska, Sylwia; Tracy, Brian D.; Smith, David J.; Dobrowolska, Margaret; Furdyna, Jacek K.

    2017-02-01

    We describe the structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy on GaAs (111) substrates, as revealed by transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. When the Mn concentration is increased, the lattice of the ternary (Sn,Mn)Se films evolves quasi-coherently from a SnSe2 two-dimensional (2D) crystal structure into a more complex quasi-2D lattice rearrangement, ultimately transforming into the magnetically concentrated antiferromagnetic MnSe 3D rock-salt structure as Mn approaches 50 at. % of this material. These structural transformations are expected to underlie the evolution of magnetic properties of this ternary system reported earlier in the literature.

  12. Magnetic-field induced bistability in a quasi-one-dimensional semiconductor microcavity

    International Nuclear Information System (INIS)

    Zhang, Chuanyi; Zhang, Weifeng

    2015-01-01

    We theoretically study the magnetic-field induced bistability in a quasi-one-dimensional semiconductor microcavity. A critical magnetic field is obtained, and the bistability appears if a magnetic field is greater than the critical value. For a positive energy detuning of the pump from the bare exciton polaritons, one bistability loop first emerges, then it divides into two loops, and finally one of them vanishes with the increasing magnetic field. This phenomenon originates from the magnetic-field modulated interactions for opposite spins. In the variational process, there are two important effects: one is a logic gate with a small variation of the excitation laser, and the other is a spin texture like skyrmion and this texture is periodic if the energy detuning varies periodically in real space, which is useful for designing the spin-dependent optoelectronic devices. - Highlights: • We study the bistability induced by a magnetic field in a microcavity. • One bistability loop can divide into two, and then the two loops return to one. • A spin texture like skyrmion and logic gate arise in the variation of bistability loop

  13. Structural, magnetic and optical properties of a dilute magnetic semiconductor based on Ce{sub 1−x}Co{sub x}O{sub 2} thin film grown on LaAlO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mahmoud, Waleed E., E-mail: w_e_mahmoud@yahoo.com [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Suez Canal University, Faculty of Science, Department of Physics, Ismailia (Egypt); Al-Ghamdi, A.A. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Al-Agel, F.A. [Hail University, College of Science, Department of Physics, Hail (Saudi Arabia); Al-Arfaj, E. [Umm Alqura University, Department of Physics, Makkah (Saudi Arabia); Qassim University, College of Science, Physics Department, Buraidah 5145 (Saudi Arabia); Shokr, F.S. [King Abdulaziz University, Faculty of Science & Arts, Department of Physics, Rabigh (Saudi Arabia); Al-Gahtany, S.A. [King Abdulaziz University, Faculty of Science for Girls, Department of Physics, Jeddah (Saudi Arabia); Alshahrie, Ahmed [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Jalled, Ouissem [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Laboratory of Applied Mineral Chemistry, Department of Chemistry, University Tunis ElManar, Faculty of Sciences, Campus 2092, Tunis (Tunisia); Bronstein, L.M. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States); Beall, Gary W. [King Abdulaziz University, Faculty of Science, Department of Physics, Jeddah (Saudi Arabia); Indiana University, Department of Chemistry, Bloomington, IN 47405 (United States)

    2015-12-15

    Highlights: • Co doped CeO{sub 2} was grown on LaAlO{sub 3} (0 0 1) via a modified sol–gel spin-coating technique. • The concentration of the Co ions was varied from 1 to 15 at.%. • The incorporation of 5 at.% of Mn ions was found to provide formation of exceptionally magnetic moment. • This amount demonstrated a giant magnetic moment of 1.09 μ{sub B}/Co. • This amount reduced the optical band gap and enhanced the optical performance. - Abstract: The enhancement of the room temperature ferromagnetism and optical properties of the dilute magnetic metal oxides is a crucial clue to construct spin-based optoelectronic devices. In this work, Ce{sub 1−x}Co{sub x}O{sub 2} (0.01 ≤ x ≤0.15) thin films were prepared via ethylene glycol modified sol–gel spin coating technique on the LaAlO{sub 3} (0 0 1) substrate to enhance their room temperature ferromagnetism and optical properties. The structures, magnetic and optical properties of the prepared films were characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, SQUID magnetometer, X-ray photoelectron spectroscopy and UV–vis spectrophotometer. The results demonstrated that a single phase cubic structure was formed, implying the substitution of Co ions into the Ce ions sites. The prepared films showed room temperature ferromagnetism with saturation magnetic moment of 1.09 μ{sub B}/Co was achieved for 5 at.% Co-doped CeO{sub 2}. This film exhibited high optical transparency of 85% and low optical band energy gap of 3.39 eV. The improved magnetic and optical properties are argued to the increase of the density of the oxygen vacancies into the cerium oxide crystal structure due to the incorporation of Co ions.

  14. Ferrimagnetic resonance study on photo-induced magnetism in hybrid magnetic semiconductor V(TCNE)x, x ˜2 film

    Science.gov (United States)

    Yoo, Jung-Woo; Shima Edelstein, R.; Lincoln, D. M.; Epstein, A. J.

    2007-03-01

    The V(TCNE)x, x˜2 is a fully spin-polarized magnetic semiconductor, whose magnetic order exceeds room temperature (Tc > 350 K), and electronic transport follows hopping mechanism through the Coulomb energy split &*circ; subband. In addition, it was determined that this material has thermally reversible persistent change in both magnetism and conductivity driven by the optical excitation [1]. Here, we report detailed investigation on photo-induced magnetism in V(TCNE)x by employing ferrimagnetic resonance (PIFMR) study with an in-situ light illumination. Upon optical excitation (λ˜ 457.9 nm), the FMR spectra display substantial change in their linewidth and resonance field. Angular dependence analyses of line shift indicate the increase of unixial anisotropy field in the film caused by the light irradiation. The results demonstrated that the change in overall magnetic anisotropy by the illumination plays an important role in inducing photo- induced magnetism in (TCNE) class magnet. [1] J.-W. Yoo, et al. to be published in Phys. Rev. Lett.

  15. Dynamics of Coulomb correlations in semiconductors in high magnetic fields

    International Nuclear Information System (INIS)

    Fromer, Neil Alan

    2002-01-01

    Current theories have been successful in explaining many nonlinear optical experiments in undoped semiconductors. However, these theories require a ground state which is assumed to be uncorrelated. Strongly correlated systems of current interest, such as a two dimensional electron gas in a high magnetic field, cannot be explained in this manner because the correlations in the ground state and the low energy collective excitations cause a breakdown of the conventional techniques. We perform ultrafast time-resolved four-wave mixing on $n$-modulation doped quantum wells, which contain a quasi-two dimensional electron gas, in a large magnetic field, when only a single Landau level is excited and also when two levels are excited together. We find evidence for memory effects and as strong coupling between the Landau levels induced by the electron gas. We compare our results with simulations based on a new microscopic approach capable of treating the collective effects and correlations of the doped electrons, and find a good qualitative agreement. By looking at the individual contributions to the model, we determine that the unusual correlation effects seen in the experiments are caused by the scattering of photo-excited electron-hole pairs with the electron gas, leading to new excited states which are not present in undoped semiconductors, and also by exciton-exciton interactions mediated by the long-lived collective excitations of the electron gas, inter-Landau level magnetoplasmons

  16. Magnetic performance of orthorhombic Mn{sub 35}Ge{sub 35}Te{sub 30} nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Mahdy, Iman A.

    2017-01-15

    Nanocrystalline antiferromagnetic Mn{sub 35}Ge{sub 35}Te{sub 30} diluted magnetic semiconductors powder syntheses by the conventional direct reaction of pure metals. Nanocrystalline nature of the prepared sample confirmed using various techniques, where x-Ray diffraction (XRD) and atomic force microscope (AFM) measurements shows ~96 nm particle size, while transmission electron microscope (TEM) shows 92 nm particle size. XRD analysis show orthorhombic symmetry with lattice parameters a=7.386611±(0.0066) Å, b=8.962502±(0.0090) Å and c=7.027349±(0.0040) Å. Electron Spin resonance (ESR) show a broad asymmetric line whereas the remnant Mn{sup 2+} six-hyperfine lines are broadened within |+1/2>→|−1/2> line according to high anisotropy; calculated Landé g-factor is 2.047. Vibrating sample magnetometer (VSM) analysis, field-moment characteristics revealed a hysteresis loop with small coercive field indicating that Mn{sub 35}Ge{sub 35}Te{sub 30} is a soft magnetic material. Moreover, hysteresis measurements at different temperatures show increasing magnetization with increasing temperature up to 150 K followed by decreased with increasing temperature up to 300 K. This behavior indicated to the antiferromagnetic nature of the prepared nanocrystalline materials. Magnetic moment – temperature measurements show Néel temperature T{sub N}=172.6 K. Magnetic force microscope revealed magnetic domains as a result of interaction between magnetic dipole moments of magnetic cantilever and pressed powder. - Highlights: • Nanocrystalline diluted magnetic semiconductors of new Mn-Ge-Te orthorhombic phase. • Soft magnetic materials for a magnetic core of many devices. • Mixture of ferromagnetic and antiferromagnetic. • Asymmetry in hysteresis loop explained by the exchange bias of domain spins.

  17. Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

    OpenAIRE

    Saffarzadeh, Alireza; Daqiq, Reza

    2009-01-01

    We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to t...

  18. Diamagnetic (cyclotron) resonance in semiconductors using strong magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Sosniak, J

    1962-07-01

    Diamagnetic (cyclotron) resonance experiments have been carried out in the semiconductors indium-antimonide (InSb), the indium-arsenide (InAs). Pulsed magnetic fields up to 300,000 gauss and monochromatic infrared radiation of 9 to 13.5 microns wavelength were used to measure the effective mass of the conduction electrons in those materials. The samples were n-type single crystals, with a room temperature electron concentration of 1.9 x 10{sup 16} and 6 x 10{sup 16} per cm{sup 3} in InSb and InAs respectively. Both the InSb and InAs samples showed a strong dependence of the effective mass on the magnetic field. The results show that the conduction bands in those solids are highly non-parabolic. Measurements were also made of the resonance absorption coefficients, which were found to be considerably smaller than the values obtained from simple theory. The effect is explained by assuming that the magnetic field reduces the intrinsic electron density, and that the absorption coefficient depends on the shape of the conduction band. It is postulated as a consequence that the relaxation time of diamagnetic energy levels at high magnetic fields does not differ appreciably from the relaxation time used in the description of conduction processes. (author)

  19. Electron Raman scattering in semiconductor quantum wire in an external magnetic field

    International Nuclear Information System (INIS)

    Betancourt-Riera, Ri; Nieto Jalil, J M; Riera, R; Betancourt-Riera, Re; Rosas, R

    2008-01-01

    The differential cross-section for an electron Raman scattering process in a semiconductor quantum wire in the presence of an external magnetic field perpendicular to the plane of confinement is calculated. We assume a single parabolic conduction band. The emission spectra for different scattering configurations and the selection rules for the processes are studied. Singularities in the spectra are found and interpreted. The electron Raman scattering studied here can be used to provide direct information about the electron band and subband structure of these confinement systems. The magnetic field distribution is considered constant with value B 0 inside the wire and zero outside

  20. Increasing Mn substitution in magnetic semiconductors through controlled ambient annealing processes

    Energy Technology Data Exchange (ETDEWEB)

    Hollingsworth, J. [Materials Science Program, Department of Mechanical and Aerospace Engineering, UC San Diego, La Jolla, CA 92093-0411 (United States); Bandaru, P.R. [Materials Science Program, Department of Mechanical and Aerospace Engineering, UC San Diego, La Jolla, CA 92093-0411 (United States)], E-mail: pbandaru@ucsd.edu

    2008-06-25

    We report on a controlled ambient annealing technique aimed at increasing the amount of Mn incorporation in III-V semiconductors. The aim is to reduce the number of hole carrier and magnetic element compensating entities, such as Mn interstitials and anti-site defects, to increase the magnetic Curie temperature. The idea is (a) to increase the number of Group III vacancies through annealing in Group V vapor rich conditions and (b) judicious use of crystal field theory to reduce/stabilize Mn interstitials. Our experimental results constitute the highest reportedT{sub c} ({approx}130 K) in Mn doped InSb and Mn doped InP. The possibility of ferrimagnetism in Mn and Cr incorporated GaAs, was noted.

  1. Technique for magnetic susceptibility determination in the highly doped semiconductors by electron spin resonance

    Energy Technology Data Exchange (ETDEWEB)

    Veinger, A. I.; Zabrodskii, A. G.; Tisnek, T. V.; Goloshchapov, S. I.; Semenikhin, P. V. [Ioffe Institute of the Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2014-08-20

    A method for determining the magnetic susceptibility in the highly doped semiconductors is considered. It is suitable for the semiconductors near the metal - insulator transition when the conductivity changes very quickly with the temperature and the resonance line form distorts. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes into account the depth of the skin layer is described. Analysis is made for the example of arsenic-doped germanium samples at a rather high concentration corresponding to the insulator-metal phase transition.

  2. Peltier heat of a small polaron in a magnetic semiconductor

    International Nuclear Information System (INIS)

    Liu, N.H.; Emin, D.

    1985-01-01

    For the first time the heat transported with a small polaron in both antiferromagnetic and ferromagnetic semiconductors is calculated. This heat, the Peltier heat, π, is obtained from the change of the entropy of the total system upon introduction of a charge carrier. We explicitly consider both the intrasite and intersite exchange interactions between a small polaron and the interacting spins of a spin-1/2 magnet. There are two competing magnetic contributions to the Peltier heat. First, adding the carrier increases the spin entropy of the system. This provides a positive contribution to π. Second, the exchange between the carrier and the sites about it enhances the exchange binding between these sites. This reduces the energetically allowable spin configurations and provides a negative contribution to π. At extremely high temperatures when kT exceeds the intrasite exchange energy, the first effect dominates. Then π is simply augmented by kT ln 2. However, well below the magnetic transition temperature the second effect dominates. In the experimentally accessible range between these limits both effects are comparable and sizable. The net magnetic contribution to the Peltier heat rises with temperature. Thus, a carrier's interactions with its magnetic environment produces a significant and distinctive contribution to its Peltier heat

  3. Peltier heat of a small polaron in a magnetic semiconductor

    International Nuclear Information System (INIS)

    Liu, N.L.H.; Emin, D.

    1984-01-01

    The heat transported with a small polaron in both antiferromagnetic and ferromagnetic semiconductors is calculated. This heat, the Peltier heat, π, is obtained from the change of the entropy of the total system upon introduction of a charge carrier. We explicitly consider both the intrasite and intersite exchange interactions between a small polaron and the interacting spins of a spin-1/2 magnet. There are two competing magnetic contributions to the Peltier heat. First, adding the carrier increases the spin entropy of the system. This provides a positive contribution to π. Second, the exchange between the carrier and the sites about it enhances the exchange binding between these sites. This reduces the energetically allowable spin configurations and provides a negative contribution to π. At extremely high temperature when kT exceeds the intrasite exchange energy, the first effect dominates. Then π is simply augmented by kTln2. However, well below the magnetic transition temperature the second effect dominates. In the experimentally accessible range between these limits both effects are comparable and sizable. The net magnetic contribution to the Peltier heat rises with temperature. Thus, a carrier's interactions with its magnetic environment produces a significant and distinctive contribution to its Peltier heat

  4. Nuclear magnetic resonance of randomly diluted magnetic materials

    International Nuclear Information System (INIS)

    Magon, C.J.

    1985-01-01

    The temperature dependence of the nuclear relaxation rates and line shapes of the F O resonance in the diluted antiferromagnet Fe x Zn 1-x F 2 and Mn x Zn 1-x F 2 are studied over a large temperature range T N 1 ) of the F O nuclei, which are not transfer hyperfine coupled to the Fe (or Mn) spins, have been measured and calculated as a function of the concentration x. Good agreement with experiment is found for the theoretical results, which have been obtained in the range 0.1 ≤ x ≤ 0.8. The temperature dependence of 1/T 1 for T N 1 data near T N was used to study Random Field Effects on the critical behavior of Mn .65 Zn . 3 5 F 2 , for fields applied parallel and perpendicular to the easy (C) axis. It was found that the transition temperature T N depressed substantially with field only for H o || C. The experimental results are in general accord with the theory for Random Field Effects in disordered, anisotropic antiferromagnets. The critical divergence of the inhomogeneously broadened F O NMR was studied in Fe .6 Zn .4 F 2 above T N . The experimental results agree with Heller's calculation of the NMR line broadening by Random Field Effects. With H o || C the line shape changes from Gaussian towards Lozentzian for t -2 and below T N its line width increase qualitatively following the increase in the sublattice magnetization. (author)

  5. Theoretical perspective on structural, electronic and magnetic properties of 3d metal tetraoxide clusters embedded into single and di-vacancy graphene

    Energy Technology Data Exchange (ETDEWEB)

    Rafique, Muhammad [School of Energy Science and Engineering, Harbin Institute of Technology, 92 West Dazhi Street, Harbin 150001 (China); Mehran University of Engineering and Technology, S.Z.A.B, Campus Khairpur Mir' s, Sindh (Pakistan); Shuai, Yong, E-mail: shuaiyong@hit.edu.cn [School of Energy Science and Engineering, Harbin Institute of Technology, 92 West Dazhi Street, Harbin 150001 (China); Tan, He-Ping; Muhammad, Hassan [School of Energy Science and Engineering, Harbin Institute of Technology, 92 West Dazhi Street, Harbin 150001 (China)

    2017-06-30

    Highlights: • First-principles calculations are performed for TMO{sub 4} cluster-doped SV and DV monolayer graphene structures. • Ferromagnetism coupling behavior between TM atoms and neighboring C and O atoms was observed for all structural models. • The direction of charge transfer is always from graphene layer to TMO{sub 4} clusters. • CrO{sub 4} and MnO{sub 4} doped SV graphene systems display dilute magnetic semiconductor (DMS) behavior in their spin down channel. • CoO{sub 4}, CrO{sub 4}, FeO{sub 4} and MnO{sub 4} doped DV graphene systems exhibit DMS behavior in their spin up channel. - Abstract: Structural, electronic and magnetic properties of 3d transition metal tetraoxide TMO{sub 4} superhalogen clusters doped single vacancy (SV) and divacancy (DV) monolayer graphene have been studied using first-principles calculations. We found that in both cases of TMO{sub 4} cluster substitution, all the impurity atoms are tightly bonded with graphene, having significant formation energy and large charge transfer occurs from graphene to TMO{sub 4} clusters. CrO{sub 4} and MnO{sub 4} substituted SV graphene structures exhibit dilute magnetic semiconductor behavior in their spin down channel with 2.15 μ{sub B} and 3.51 μ{sub B} magnetic moment, respectively. However, CoO{sub 4}, FeO{sub 4}, TiO{sub 4} and NiO{sub 4} substitution into SV graphene, leads to Fermi level shifting to conduction band, thereby causing the Dirac cone to move into valence band and a band gap appears at high symmetric K-point. Interestingly, CoO{sub 4}, CrO{sub 4}, FeO{sub 4} and MnO{sub 4} substituted DV graphene structures exhibit dilute magnetic semiconductor behavior in their spin up channel with 1.74 μ{sub B}, 3.27 μ{sub B}, 3.09 μ{sub B} and 1.99 μ{sub B} magnetic moment, respectively. Detailed analysis of density of states (DOS) plots show that d orbitals of 3d TM atoms should be responsible for inducing magnetic moments in graphene. We believe that our results are

  6. Electronic structure and magnetism of Mn-doped GaSb for spintronic applications: A DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Seña, N.; Dussan, A. [Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Universidad Nacional de Colombia, Bogotá (Colombia); Mesa, F. [Facultad de Ciencias Naturales y Matemáticas, Grupo NanoTech, Universidad del Rosario, Bogotá (Colombia); Castaño, E.; González-Hernández, R., E-mail: rhernandezj@uninorte.edu.co [Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla (Colombia)

    2016-08-07

    We have carried out first-principles spin polarized calculations to obtain comprehensive information regarding the structural, magnetic, and electronic properties of the Mn-doped GaSb compound with dopant concentrations: x = 0.062, 0.083, 0.125, 0.25, and 0.50. The plane-wave pseudopotential method was used in order to calculate total energies and electronic structures. It was found that the Mn{sub Ga} substitution is the most stable configuration with a formation energy of ∼1.60 eV/Mn-atom. The calculated density of states shows that the half-metallic ferromagnetism is energetically stable for all dopant concentrations with a total magnetization of about 4.0 μ{sub B}/Mn-atom. The results indicate that the magnetic ground state originates from the strong hybridization between Mn-d and Sb-p states, which agree with previous studies on Mn-doped wide gap semiconductors. This study gives new clues to the fabrication of diluted magnetic semiconductors.

  7. Anomalous Hall effect in a diluted p-InAs〈Mn〉 magnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Arslanov, R. K., E-mail: arslanovr@gmail.com; Arslanov, T. R.; Daunov, M. I. [Russian Academy of Sciences, Institute of Physics, Dagestan Scientific Center (Russian Federation)

    2017-03-15

    The dependences of the electrical resistivity and the Hall coefficient of single-crystal p-InAs〈Mn〉 bulk samples with an acceptor concentration of about 10{sup 18} cm{sup –3} on uniform pressure P = 4–6 GPa at T = 300 K in the region of impurity conduction are quantitatively analyzed. The anomalous Hall effect is shown to occur in p-InAs〈Mn〉. Its contribution is negative and correlates with the deionization of acceptors and an increase in the magnetic susceptibility.

  8. First-principles study of ZnSnAs2-based dilute magnetic semiconductors

    Science.gov (United States)

    Kizaki, Hidetoshi; Morikawa, Yoshitada

    2018-02-01

    The electronic structure and magnetic properties of chalcopyrite Zn(Sn,TM)As2 and (Zn,TM)SnAs2 have been investigated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation within the local spin density approximation, where TM denotes a 3d transition metal element. We find that the half-metallic and high-spin ferromagnetic state can be obtained in Zn(Sn,V)As2, Zn(Sn,Cr)As2, Zn(Sn,Mn)As2, (Zn,V)SnAs2, and (Zn,Cr)SnAs2. The calculated result of Zn(Sn,Mn)As2 is in good agreement with the experimentally observed room-temperature ferromagnetism if we can control selective Mn doping at Sn sites. In addition, (Zn,V)SnAs2 and (Zn,Cr)SnAs2 are predicted to exhibit high-Curie-temperature ferromagnetism.

  9. Magnetic and structural properties of manganese doped (Al,Ga)N studied with emission Mössbauer spectroscopy

    CERN Multimedia

    Gallium nitride (GaN) and related compounds form a unique class of semiconductors with extraordinary qualities in terms of their crystal structure, optical properties, and electrical properties. These novel properties have made them useful in a wide range of applications in optoelectronic and high-frequency devices such as light emitting diodes, laser diodes and high power field effect transistors. When doped with a few percents of Mn and in the presence of free holes, GaN has been predicted to be a magnetic semiconductor with Curie temperature above room temperature. Mixed semiconductors of Al$_{x}$Ga$_{1-x}$N (AlGaN) composition, give rise to unexpected and critical magnetic and photonic functionalities when doped with magnetic ion species. Here we propose an experiment on very thoroughly characterised AlGaN doped with Mn utilising extremely dilute $^{57}$Mn (T$_{1/2}$=1.5 min), $^{57}$Co (T$_{1/2}$ = 272 d) and $^{119}$In (T$_{1/2}$=2.1 min) implantations, in order to perform $^{57}$Fe and $^{119}$Sn emiss...

  10. Ab initio studies of magnetic anisotropy energy in highly Co-doped ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Łusakowski, A., E-mail: lusak@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, PL-02668 Warsaw (Poland); Szuszkiewicz, W. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, PL-02668 Warsaw (Poland); Faculty of Mathematics and Natural Sciences, University of Rzeszów, ul. S. Pigonia 1, PL-35959 Rzeszów (Poland)

    2017-03-15

    Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted magnetic semiconductor (Zn,Co)O were performed using OpenMX package with fully relativistic pseudopotentials. The analysis of the band spin-orbit interaction and the magnetic ion's surrounding on magnetic anisotropy have been provided. As a result, the calculations show that the magnetic anisotropy in (Zn,Co)O solid solution, mainly of the single ion anisotropy type has been caused by Co ions. - Highlights: • The magnetic anisotropy in (Zn,Co)O is mainly due to anisotropy of single cobalt ion. • The magnetic anisotropy of (Zn,Co)O strongly depends on the nearest neighborhood of magnetic ion including local lattice deformations. • For (Zn,Co)O the energy of magnetic anisotropy is described by second order terms in magnetization.

  11. Element Specific Versus Integral Structural and Magnetic Properties of Co:ZnO and Gd:GaN Probed with Hard X-ray Absorption Spectroscopy

    Directory of Open Access Journals (Sweden)

    Andreas Ney

    2010-06-01

    Full Text Available Dilute magnetic semiconductors (DMS are envisioned as sources of spin-polarized carriers for future semiconductor devices which simultaneously utilize spin and charge of the carriers. The hope of discovering a DMS with ferromagnetic order up to room temperature still motivates research on suitable DMS materials. Two candidate wide-band gap DMS are Gd:GaN and Co:ZnO. We have used hard X-ray absorption spectroscopy (XAS and in particular X-ray linear dichroism (XLD and X-ray magnetic circular dichroism (XMCD to study both DMS materials with element specificity and compare these findings with results from integral SQUID magnetometry as well as electron paramagnetic resonance (EPR.

  12. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  13. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  14. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  15. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  16. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  17. Moessbauer studies of SnO2 powders doped with dilute 57Fe, prepared by a sol-gel method

    International Nuclear Information System (INIS)

    Nomur, K.; Sakuma, J.; Takeda, M.

    2006-01-01

    Diluted magnetic semiconductor (DMS) is prospected as new materials with both semiconductor and magnetic properties. In order to confirm these phenomena, we prepared the powders of SnO 2 doped with various amount of 57 Fe by a sol-gel method. Various compositions of Sn 1-x 57 Fe x O 2 were obtained by mixing some ratio of Fe 3+ nitrate solution and acetylacetonate Sn 4+ complex in the ethylene glycol and citric acid solution. The solutions were evaporated, ashed at around 200 grad C, and finally annealed at 500 grad C, 600 grad C, and 650 grad C, respectively. These Sn 1-x 57 Fe x O 2 (x=0.005, 0.01, 0.03 and 0.05) were measured by XRD, VSM, and Moessbauer spectrometry. The prepared powder samples were confirmed to be a rutile structure, but iron compounds were not detected by XRD. Moessbauer spectra of Sn 1-x 57 Fe x O 2 prepared at 500 grad C were shown in Fig. 1. A small amount of broad sextets were observed in MS spectra of Sn 1-x 57 Fe x O 2 in addition to paramagnetic components. The relative intensity seems to be strong with the decrease of the amount of doped Fe. Moessbauer spectrum at 10 K shows clearly the magnetic components. The magnetic sextet was observed in MS spectra of samples prepared at 650 grad C, but the magnetic behavior weakened because of antiferromagnetic α-Fe 2 O 3 , produced due to the phase separation at high temperatures. (authors)

  18. Nature of magnetization and lateral spin–orbit interaction in gated semiconductor nanowires

    Science.gov (United States)

    Karlsson, H.; Yakimenko, I. I.; Berggren, K.-F.

    2018-05-01

    Semiconductor nanowires are interesting candidates for realization of spintronics devices. In this paper we study electronic states and effects of lateral spin–orbit coupling (LSOC) in a one-dimensional asymmetrically biased nanowire using the Hartree–Fock method with Dirac interaction. We have shown that spin polarization can be triggered by LSOC at finite source-drain bias,as a result of numerical noise representing a random magnetic field due to wiring or a random background magnetic field by Earth magnetic field, for instance. The electrons spontaneously arrange into spin rows in the wire due to electron interactions leading to a finite spin polarization. The direction of polarization is, however, random at zero source-drain bias. We have found that LSOC has an effect on orientation of spin rows only in the case when source-drain bias is applied.

  19. Magnetically diluted semi-conductor of SnO_2- Fe obtained by controlled precipitation

    International Nuclear Information System (INIS)

    Cajas, P.C.; Munoz, R.; Rodriguez-Paez, J.E.

    2014-01-01

    Solid solutions were synthesized SnO_2 doped with 5% and 8 mol% Fe by the controlled precipitation method. The particles size was obtained of ∼12 nm with heath treatment 450 °C. The presence of iron in the structure is evidenced by Raman spectroscopy The crystallite size we obtained with the results of XRD, and particle size by MET, it was concluded that the nanoparticles obtained were monocrystalline. The particles were characterized magnetically, for the powders doped to 8% Fe was determined ferromagnetic behavior at 5K, with a tendency superparamagnetic and paramagnetic at a temperature of 300K. (author)

  20. Magnetic ordering in dilute YTb and YEr alloys

    International Nuclear Information System (INIS)

    Rainford, B.D.; Kilcoyne, S.H.; Mohammed, K.A.; Lanchester, P.C.; Stanley, H.B.; Caudron, R.

    1988-01-01

    Dilute YEr alloys (Er concentration between 3% and 10%) show the existence of sinusoidally modulated antiferromagnetism down to the lowest impurity concentrations studied. Extrapolation of the Neel temperatures for both YEr and YTb suggests a critical concentration is ≅ 0.8% Tb, Er. Ordering in such dilute alloys may result from exchange enhancement in the yttrium host

  1. Magnetic ordering in dilute YTb and YEr alloys

    Energy Technology Data Exchange (ETDEWEB)

    Rainford, B.D.; Kilcoyne, S.H.; Mohammed, K.A.; Lanchester, P.C.; Stanley, H.B.; Caudron, R.

    1988-12-01

    Dilute YEr alloys (Er concentration between 3% and 10%) show the existence of sinusoidally modulated antiferromagnetism down to the lowest impurity concentrations studied. Extrapolation of the Neel temperatures for both YEr and YTb suggests a critical concentration is /approx equal/ 0.8% Tb, Er. Ordering in such dilute alloys may result from exchange enhancement in the yttrium host.

  2. Analysis of Magnetic Anisotropy and the Role of Magnetic Dilution in Triggering Single-Molecule Magnet (SMM) Behavior in a Family of CoII YIII Dinuclear Complexes with Easy-Plane Anisotropy.

    Science.gov (United States)

    Palacios, María A; Nehrkorn, Joscha; Suturina, Elizaveta A; Ruiz, Eliseo; Gómez-Coca, Silvia; Holldack, Karsten; Schnegg, Alexander; Krzystek, Jurek; Moreno, José M; Colacio, Enrique

    2017-08-25

    Three new closely related Co II Y III complexes of general formula [Co(μ-L)(μ-X)Y(NO 3 ) 2 ] (X - =NO 3 - 1, benzoate 2, or 9-anthracenecarboxylato 3) have been prepared with the compartmental ligand N,N',N''-trimethyl-N,N''-bis(2-hydroxy-3-methoxy-5-methylbenzyl)diethylenetriamine (H 2 L). In these complexes, Co II and Y III are triply bridged by two phenoxide groups belonging to the di-deprotonated ligand (L 2- ) and one ancillary anion X - . The change of the ancillary bridging group connecting Co II and Y III ions induces small differences in the trigonally distorted CoN 3 O 3 coordination sphere with a concomitant tuning of the magnetic anisotropy and intermolecular interactions. Direct current magnetic, high-frequency and -field EPR (HFEPR), frequency domain Fourier transform THz electron paramagnetic resonance (FD-FT THz-EPR) measurements, and ab initio theoretical calculations demonstrate that Co II ions in compounds 1-3 have large and positive D values (≈50 cm -1 ), which decrease with increasing the distortion of the pseudo-octahedral Co II coordination sphere. Dynamic ac magnetic susceptibility measurements indicate that compound 1 exhibits field-induced single-molecule magnet (SMM) behavior, whereas compounds 2 and 3 only display this behavior when they are magnetically diluted with diamagnetic Zn II (Zn/Co=10:1). In view of this, it is always advisable to use magnetically diluted complexes, in which intermolecular interactions and quantum tunneling of magnetism (QTM) would be at least partly suppressed, so that "hidden single-ion magnet (SIM)" behavior could emerge. Field- and temperature-dependence of the relaxation times indicate the prevalence of the Raman process in all these complexes above approximately 3 K. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Electronic structure and magnetic properties of dilute U impurities in metals

    Science.gov (United States)

    Mohanta, S. K.; Cottenier, S.; Mishra, S. N.

    2016-05-01

    The electronic structure and magnetic moment of dilute U impurity in metallic hosts have been calculated from first principles. The calculations have been performed within local density approximation of the density functional theory using Augmented plane wave+local orbital (APW+lo) technique, taking account of spin-orbit coupling and Coulomb correlation through LDA+U approach. We present here our results for the local density of states, magnetic moment and hyperfine field calculated for an isolated U impurity embedded in hosts with sp-, d- and f-type conduction electrons. The results of our systematic study provide a comprehensive insight on the pressure dependence of 5f local magnetism in metallic systems. The unpolarized local density of states (LDOS), analyzed within the frame work of Stoner model suggest the occurrence of local moment for U in sp-elements, noble metals and f-block hosts like La, Ce, Lu and Th. In contrast, U is predicted to be nonmagnetic in most transition metal hosts except in Sc, Ti, Y, Zr, and Hf consistent with the results obtained from spin polarized calculation. The spin and orbital magnetic moments of U computed within the frame of LDA+U formalism show a scaling behavior with lattice compression. We have also computed the spin and orbital hyperfine fields and a detail analysis has been carried out. The host dependent trends for the magnetic moment, hyperfine field and 5f occupation reflect pressure induced change of electronic structure with U valency changing from 3+ to 4+ under lattice compression. In addition, we have made a detailed analysis of the impurity induced host spin polarization suggesting qualitatively different roles of f-band electrons on moment stability. The results presented in this work would be helpful towards understanding magnetism and spin fluctuation in U based alloys.

  4. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    International Nuclear Information System (INIS)

    Luo, Zhaochu; Zhang, Xiaozhong

    2015-01-01

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally

  5. Influence of dilution and nature of the interaction on surface and interface magnetism

    International Nuclear Information System (INIS)

    Tsallis, C.

    1986-01-01

    The recent theoretical effort of the Rio de Janeiro/CBPF group on surface magnetism is tutorially reviewed. Within a real space renormalization group framework, we analyse the influence of factors such as the number of states per spin (q-state Potts model), the signs of the coupling constants (mixed ferro and antiferromagnetic interactions), the presence of a second semi-infinite bulk (interface case), the symmetry of the interaction (anisotropic Heisenberg model), and surface and/or bulk dilution (bond quenched model). A variety of interesting physical effects emerges. (Autor) [pt

  6. Emission channeling with short-lived isotopes lattice location of impurities in semiconductors and oxides

    CERN Multimedia

    We propose to perform emission channeling lattice location experiments in a number of semiconductor and oxide systems of technological relevance: \\\\- The lattice location of the transition metal probes $^{56}$Mn ($\\textit{t}_{1/2}$=2.6 h), $^{59}$Fe (45 d), $^{61}$Co (1.6 h) and $^{65}$Ni (2.5 h) is to be investigated in materials of interest as dilute magnetic semiconductors, such as GaMnAs, GaMnN, GaFeN, AlGaN, SiC, and in a number of oxides that are candidates for “single ion ferromagnetism”, in particular SrTiO$_3$ and LiNbO$_3$.\\\\- The topic of $\\textit{p}$-type doping of nitride semiconductors shall be addressed by studying the lattice sites of the acceptor dopants Mg and Be in GaN and AlN using the short-lived probes $^{27}$Mg (9.5 min) and $^{11}$Be (13.8 s). The aim is to reach a lattice location precision around 0.05 Å in order to provide critical tests for recent theoretical models which e.g. have predicted displacements of the Mg atom from the ideal substitutional Ga and Al sites of the order...

  7. Moessbauer-spectroscopic study of structure and magnetism of the exchange-coupled layer systems Fe/FeSn{sub 2}, and Fe/FeSi/Si and the ion-implanted diluted magnetic semiconductor SiC(Fe); Moessbauerspektroskopische Untersuchung von Struktur und Magnetismus der austauschgekoppelten Schichtsysteme Fe/FeSn{sub 2} und Fe/FeSi/Si und des ionenimplantierten verduennten magnetischen Halbleiters SiC(Fe)

    Energy Technology Data Exchange (ETDEWEB)

    Stromberg, Frank

    2009-07-07

    In line with this work the structural and magnetic properties of the exchange coupled layered systems Fe/FeSn{sub 2} and Fe/FeSi/Si and of the Fe ion implanted diluted magnetic semiconductor (DMS) SiC(Fe) were investigated. The main measuring method was the isotope selective {sup 57}Fe conversion electron Moessbauer spectroscopy (CEMS), mostly in connection with the {sup 57}Fe tracer layer technique, in a temperature range from 4.2 K to 340 K. Further measurement techniques were X-ray diffraction (XRD), electron diffraction (LEED, RHEED), SQUID magnetometry and FMR (Ferromagnetic Resonance). In the first part of this work the properties of thin AF FeSn{sub 2}(001) films and of the exchange-bias system Fe/FeSn{sub 2}(001) on InSb(001) were investigated. With the application of {sup 57}Fe-tracer layers and CEMS both the Fe-spin structure and the temperature dependence of the magnetic hyperfine field (B{sub hf}) of FeSn{sub 2} could be examined. The evaporation of Fe films on the FeSn{sub 2} films produced in the latter ones a high perpendicular spin component at the Fe/FeSn{sub 2} interface. In some distance from the interface the Fe spins rotate back into the sample plane. Furthermore {sup 57}Fe-CEMS provided a correlation between the absolute value of the exchange field vertical stroke He vertical stroke and the amount of magnetic defects within the FeSn{sub 2}. Temperature dependent CEMS-measurements yielded informations about the spin dynamics within the AF. The transition temperatures T{sub B}{sup *}, which were interpreted as superparamagnetic blocking temperatures, obtain higher values compared to the temperatures T{sub B} of the exchange-bias effect, obtained with magnetometry measurements. The second part of this work deals with the indirect exchange coupling within Fe/FeSi/Si/FeSi/Fe multilayers and FeSi diffusion barriers. The goal was to achieve Fe free Si interlayers. The CEMS results show that starting from a thickness of t{sub FeSi}=10-12 A of the

  8. Theoretical modeling of diluted antiferromagnetic systems

    International Nuclear Information System (INIS)

    Pozo, J; Elgueta, R; Acevedo, R

    2000-01-01

    Some magnetic properties of a Diluted Antiferromagnetic System (DAFS) are studied. The model of the two sub-networks for antiferromagnetism is used and a Heisenberg Hamiltonian type is proposed, where the square operators are expressed in terms of boson operators with the approach of spin waves. The behavior of the diluted system's fundamental state depends basically on the competition effect between the anisotropy field and the Weiss molecular field. The approach used allows the diluted system to be worked for strong anisotropies as well as when these are very weak

  9. Structural, electronic and magnetic properties of 3d metal trioxide clusters-doped monolayer graphene: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Rafique, Muhammad [School of Energy Science and Engineering, Harbin Institute of Technology, 92 West Dazhi Street, Harbin 150001 (China); M.U.E.T, S.Z.A.B, Campus Khairpur Mir' s, Sindh (Pakistan); Shuai, Yong, E-mail: shuaiyong1978@gmail.com [School of Energy Science and Engineering, Harbin Institute of Technology, 92 West Dazhi Street, Harbin 150001 (China); Tan, He-Ping; Hassan, Muhammad [School of Energy Science and Engineering, Harbin Institute of Technology, 92 West Dazhi Street, Harbin 150001 (China)

    2017-03-31

    Highlights: • First-principles calculations are performed for TMO{sub 3} cluster-doped and TM atoms adsorbed at three O atoms-doped graphene. • Significant magnetic coupling behavior is observed between TM atoms and neighboring C and O atoms for both cases. • The direction of charge transfer is always from monolayer graphene to TMO{sub 3} clusters incorporated into graphene. • TiO{sub 3} and VO{sub 3} doped structures display dilute magnetic semiconductor behavior. • Five different orbitals (d{sub xy}, d{sub yz}, d{sub z}{sup 2}, d{sub xz} and d{sub x}{sup 2}{sub -y}{sup 2}) of 3d TM atoms give rise to magnetic moments for both cases. - Abstract: We present first-principles density-functional calculations for the structural, electronic and magnetic properties of monolayer graphene doped with 3d (Ti, V, Cr, Fe, Co, Mn and Ni) metal trioxide TMO{sub 3} halogen clusters. In this paper we used two approaches for 3d metal trioxide clusters (i) TMO{sub 3} halogen cluster was embedded in monolayer graphene substituting four carbon (C) atoms (ii) three C atoms were substituted by three oxygen (O) atoms in one graphene ring and TM atom was adsorbed at the hollow site of O atoms substituted graphene ring. All the impurities were tightly bonded in the graphene ring. In first case of TMO{sub 3} doped graphene layer, the bond length between C−O atom was reduced and bond length between TM-O atom was increased. In case of Cr, Fe, Co and Ni atoms substitution in between the O atoms, leads to Fermi level shifting to conduction band thereby causing the Dirac cone to move into valence band, however a band gap appears at high symmetric K-point. In case of TiO{sub 3} and VO{sub 3} substitution, system exhibits semiconductor properties. Interestingly, TiO{sub 3}-substituted system shows dilute magnetic semiconductor behavior with 2.00 μ{sub B} magnetic moment. On the other hand, the substitution of CoO{sub 3}, CrO{sub 3}, FeO{sub 3} and MnO{sub 3} induced 1.015 μ{sub B}, 2

  10. Crystal fields of dilute Tb, Dy, Ho, or Er in Lu obtained by magnetization measurements

    International Nuclear Information System (INIS)

    Touborg, P.; Hog, J.

    1975-01-01

    Magnetization measurements are reported on single crystals of dilute Tb, Dy, Ho, or Er in Lu. These measurements were performed in the temperature range 1.5--100 K and field range 0--6 T and include measurements of initial susceptibility, isothermal and isofield magnetization, and basal-plane anisotropy. The results show features similar to the corresponding Y-R alloys, where R is a rare earth. Crystal-field and molecular-field parameters could be unabiguously deduced from the experimental data. The effects of crystal-field level broadening were investigated and demonstrated for Ho. Comparison of the Y-R and Lu-R results makes possible an estimate of the crystal-field parameters in the pure-rare-earth metals

  11. Magnetic anisotropies of (Ga,Mn)As films and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Frank

    2011-02-02

    In this work the magnetic anisotropies of the diluted magnetic semiconductor (Ga,Mn)As were investigated experimentally. (Ga,Mn)As films show a superposition of various magnetic anisotropies which depend sensitively on various parameters such as temperature, carrier concentration or lattice strain. However, the anisotropies of lithographically prepared (Ga,Mn)As elements differ significantly from an unpatterned (Ga,Mn)As film. In stripe-shaped structures this behaviour is caused by anisotropic relaxation of the compressive lattice strain. In order to determine the magnetic anisotropies of individual (Ga,Mn)As nanostructures a combination of ferromagnetic resonance and time-resolved scanning Kerr microscopy was employed in this thesis. In addition, local changes of the magnetic anisotropy in circular and rectangular structures were visualized by making use of spatially resolved measurements. Finally, also the influence of the laterally inhomogeneous magnetic anisotropies on the static magnetic properties, such as coercive fields, was investigated employing spatially resolved static MOKE measurements on individual (Ga,Mn)As elements. (orig.)

  12. Magnetooptical investigations on ferromagnetic III-V-semiconductors; Magnetooptische Untersuchungen an ferromagnetischen III-V-Halbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Winter, Andreas

    2009-07-23

    Magnetooptical Kerr effect (MOKE) and Magnetic Circular Dichroism (MCD) have been used to investigate magnetic as well as bandstructure properties of diluted magnetic III-V-semiconductors containing Mn. In these ferromagnetic systems it has been found that the strength of the observed effects depends linearly on the magnetization of the samples with no influence of the external magnetic field. The magnetooptical effects allowed the recording of hysteresis loops of GaMnAs, GaMnSb, InMnAs and InMnSb samples for different temperatures and in the case of GaMnAs also for different alignments of the external magnetic field with respect to the easy axis of magnetization. The Stoner-Wohlfahrt-Model has been used to describe the resulting shapes of the loops yielding the magnetic anisotropy parameters of the samples. For magnetically saturated samples, spectra of MOKE and MCD have been recorded. Contrary to pure III-V-semiconductors, which exhibit lots of sharp resonances due to interband transitions between Landau levels, III-Mn-V-semi-conductors how only very few (or just one) considerably broad resonance(s). Their spectral position(s) do(es) neither depend upon the magnetic field as it would be the case for pure III-V-semiconductors nor the magnetization. Only the amplitude increases linearly with the magnetization. Utilizing a kp-theory it has been possible to describe the observed dependencies. Valence- and conduction-band are split into Landau levels by the external magnetic field and, in addition to the Zeeman-effect, the spin-levels are split by the exchange interaction between the localized electrons of the Mn ions and the free carriers which is proportional to the magnetization of the samples. This splitting is much bigger than the Landau level splitting. Due to an inhomogeneous distribution of the Mn ions and due to the high carrier density the Landau levels are strongly broadened and their structure is not observable. Owing to the high carrier-concentration in

  13. Theoretical optoelectronic analysis of intermediate-band photovoltaic material based on ZnY1−xOx (Y = S, Se, Te) semiconductors by first-principles calculations

    International Nuclear Information System (INIS)

    Wu Kong-Ping; Zhou Meng-Ran; Huang You-Rui; Gu Shu-Lin; Ye Jian-Dong; Zhu Shun-Ming; Zhang Rong; Zheng You-Dou; Tang Kun

    2013-01-01

    The structural, energetic, and electronic properties of lattice highly mismatched ZnY 1−x O x (Y = S, Se, Te) ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate the formation of an isolated intermediate electronic band structure through diluted O-substitute in zinc-blende ZnY (Y = S, Se, Te) at octahedral sites in a semiconductor by the calculations of density of states (DOS), leading to a significant absorption below the band gap of the parent semiconductor and an enhancement of the optical absorption in the whole energy range of the solar spectrum. It is found that the intermediate band states should be described as a result of the coupling between impurity O 2p states with the conduction band states. Moreover, the intermediate bands (IBs) in ZnTeO show high stabilization with the change of O concentration resulting from the largest electronegativity difference between O and Te compared with in the other ZnSO and ZnSeO. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Electron Raman scattering in semiconductor quantum wire in external magnetic field: Froehlich interaction

    International Nuclear Information System (INIS)

    Betancourt-Riera, Ri.; Nieto Jalil, J.M.; Betancourt-Riera, Re.; Riera, R.

    2009-01-01

    The differential cross-section for an electron Raman scattering process in a semiconductor quantum wire in the presence of an external magnetic field perpendicular to the plane of confinement regarding phonon-assisted transitions, is calculated. We assume single parabolic conduction band and present a description of the phonon modes of cylindrical structures embedded in another material using the Froehlich phonon interaction. To illustrate the theory we use a GaAs/Al 0.35 Ga 0.75 As system. The emission spectra are discussed for different scattering configurations and the selection rules for the processes are also studied. The magnetic field distribution is considered constant with value B 0 inside of the wire, and zero outside.

  15. Magnetic filter apparatus and method for generating cold plasma in semiconductor processing

    Science.gov (United States)

    Vella, M.C.

    1996-08-13

    Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a ``cold plasma`` which is diffused in the region of the process surface while the ion implantation process takes place. 15 figs.

  16. Femtosecond optical characterization and applications in cadmium(manganese) telluride diluted magnetic semiconductors

    Science.gov (United States)

    Wang, Daozhi

    This thesis is devoted to the optical characterization of Cd(Mn)Te single crystals. I present the studies of free-carrier dynamics and generation and detection of coherent acoustic phonons (CAPS) using time-resolved femtosecond pump-probe spectroscopy. The giant Faraday effect and ultrafast responsivity of Cd(Mn)Te to sub-picosecond electromagnetic transients are also demonstrated and discussed in detail. The first, few-picosecond-long electronic process after the initial optical excitation exhibits very distinct characteristic dependence on the excitation condition, and in case of Cd(Mn)Te, it has been attributed to the collective effects of band filling, band renormalization, and two-photon absorption. A closed-form, analytic expression for the differential reflectivity induced by the CAPs is derived based on the propagating-strain-pulse model and it accounts very well for our experimental observations. The accurate values of the Mn concentration and longitudinal sound velocity nu s in Cd(Mn)Te were obtained by fitting the data of the refractive index dependence on the probe wavelength to the Schubert model. In Cd 0.91Mn0.09Te, nus was found to be 3.6x103 m/s. Our comparison studies from the one-color and two-color experiments reveal that the intrinsic phonon lifetime in Cd(Mn)Te was at least on the order of nanoseconds, and the observed exponential damping of the CAP oscillations was due to the finite absorption depth of the probe light. Optically-induced electronic stress has been demonstrated to be the main generation mechanism of CAPs. We also present the giant Faraday effect in the Cd(Mn)Te and the spectra of the Verdet constant, which is mainly due to the exchange interaction between the Mn ions and band electrons. The spectral characteristics of the Verdet constant in Cd(Mn)Te exhibit very unique features compared to that in pure semiconductors. In our time-resolved sampling experiments at the room temperature, the response of the Cd(Mn)Te, particularly

  17. Activity coefficients of electrons and holes in semiconductors

    International Nuclear Information System (INIS)

    Orazem, M.E.; Newman, J.

    1984-01-01

    Dilute-solution transport equations with constant activity coefficients are commonly used to model semiconductors. These equations are consistent with a Boltzmann distribution and are invalid in regions where the species concentration is close to the respective site concentration. A more rigorous treatment of transport in a semiconductor requires activity coefficients which are functions of concentration. Expressions are presented for activity coefficients of electrons and holes in semiconductors for which conduction- and valence-band energy levels are given by the respective bandedge energy levels. These activity coefficients are functions of concentration and are thermodynamically consistent. The use of activity coefficients in macroscopic transport relationships allows a description of electron transport in a manner consistent with the Fermi-Dirac distribution

  18. Synthesis and room-temperature ferromagnetic properties of single-crystalline Co-doped SnO2 nanocrystals via a high magnetic field

    International Nuclear Information System (INIS)

    Xu Yongbin; Tang Yongjun; Li Chuanjun; Cao Guanghui; Ren Weili; Xu Hui; Ren Zhongming

    2009-01-01

    The magnetic field-assisted approach has been used in the synthesis of Co-doped SnO 2 diluted magnetic semiconductor nanocrystals. By annealing under the condition with or without magnetic field, 1D growth of the nanostructures can be induced, and the magnetic properties of the obtained nanocrystals are improved. Various techniques such as X-ray diffraction (XRD), transmission electron microscope (TEM), UV-visible spectrometry (UV-vis), Raman spectrometry and vibrating sample magnetometer (VSM) have been used to characterize the obtained products. The results show that the magnetic field holds important effects on the crystal growth of the Co-doped SnO 2 nanostructures, and improvement of magnetic properties. The intrinsic reasons are discussed.

  19. Model of Anisotropic Magnetization of In(1-x)Mn(x)S: Comparison to Experiment

    Science.gov (United States)

    Garner, J.; Franzese, G.; Byrd, Ashlee; Pekarek, T. M.; Miotkowski, I.; Ramdas, A. K.

    2004-03-01

    Calculations of and experimental results for the anisotropic magnetization of the new III-VI dilute magnetic semiconductor, In(1-x)Mn(x)S, are presented. The model Hamiltonian incorporates the interaction of the incomplete shell of Mn 3d-electrons with the crystal lattice within the point-ion approximation. Other terms in the Hamiltonian include the Zeeman interaction, the spin-orbit and the spin-spin terms. It is assumed the Mn atoms do not interact with each other (this is the singlet model, which is appropriate when x is small, here 2%). The temperature- and field- dependent magnetization is found from the energy eigenvalues of the Hamiltonian matrix, which was expressed in terms of an uncoupled angular momentum basis set. Magnetization versus temperature results are found for several field values, B, pointing along various directions relative to the underlying dilute magnetic semiconductor crystal lattice. In addition, the magnetization versus field is computed for several fixed temperatures and for various B-field directions and magnitudes. Overall, the agreement of this simple model with the experimental data is very good except at low temperatures ( a few Tesla). It would be useful for quantitative comparison purposes to have optical absorption data in order to better fix the crystal potential parameters that are input parameters in the theory. In addition, the model could be improved by going beyond the point-ion approximation to better model the covalent bonds in the crystal.* Supported by UNF Research Grants, Research Corporation Award, CC4845, NSF Grant Nos. DMR-03-05653, DMR-01-02699, and ECS-01-29853 and Donors of the American Chemical Society Petroleum Research Fund PRF#40209-B5M, and a Purdue Univ. Academic Reimbursement Grant.

  20. Magnetic field effects in organic semiconductors : theory and simulations

    NARCIS (Netherlands)

    Kersten, S.P.

    2013-01-01

    Organic semiconductors are a promising class of materials, offering several advantages over inorganic semiconductors. They are light, flexible, easy and cheap to produce, and easily chemically tunable. Organic semiconductors are currently used for lighting applications and in the displays of some

  1. Electronic and magnetic properties of 1T-HfS{sub 2} by doping transition-metal atoms

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xu, E-mail: zhaoxu@htu.cn [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Wang, Tianxing; Wang, Guangtao [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Dai, Xianqi [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Department of Physics, Zhengzhou Normal University, Zhengzhou, Henan 450044 (China); Xia, Congxin [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Yang, Lin [School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang 453007 (China)

    2016-10-15

    Highlights: • Pristine 1T-HfS{sub 2} is a semiconductor with indirect gaps of 1.250 eV • Magnetism can be observed for V, Cr, Mn, Fe, Co, and Cu doping. • Strong p–d hybridization was found between TM 3d orbitals and S 3p orbitals. • V-doped 1T-HfS{sub 2} is ideal for spin injection. - Abstract: We explored the electronic and magnetic properties of 1T-HfS{sub 2} doped by transition metal (TM) atom using the first-principles calculation. We doped the transition metal atoms from the IIIB to VIB groups in nonmagnetic 1T-HfS{sub 2}. Numerical results show that the pristine 1T-HfS{sub 2} is a semiconductor with indirect gaps of 1.250 eV. Magnetism can be observed for V, Cr, Mn, Fe, Co, and Cu doping. The polarized charges mainly arise from the localized 3d electrons of the TM atom. The strong p–d hybridization was found between the 3d orbitals of TM and 3p orbitals of S. The substituted 1T-HfS{sub 2} can be a metal, semiconductor or half-metal. Analysis of the band structure and magnetic properties indicates that TM-doped HfS{sub 2} (TM = V, Fe, Cu) are promising systems to explore two-dimensional diluted magnetic semiconductors. The formation energy calculations also indicate that it is energetically favorable and relatively easier to incorporate transition metal atom into the HfS{sub 2} under S-rich experimental conditions. In contrast, V-doped HfS{sub 2} has relatively wide half-metallic gap and low formation energy. So V-doped 1T-HfS{sub 2} is ideal for spin injection, which is important for application in semiconductor spintronics.

  2. Magnetic hyperfine field at a Cd impurity diluted in RCo{sub 2} at finite temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, A.L. de, E-mail: alexandre.oliveira@ifrj.edu.br [Instituto Federal de Educação, Ciência e Tecnologia do Rio de Janeiro, Campus Nilópolis – RJ (Brazil); Chaves, C.M., E-mail: cmch@cbpf.br [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro (Brazil); Oliveira, N.A. de [Instituto de Física Armando Dias Tavares, Universidade do Estado do Rio de Janeiro, Rio de Janeiro (Brazil); Troper, A. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro (Brazil)

    2015-06-15

    The local magnetic moments and the magnetic hyperfine fields at an s–p Cd impurity diluted in inter-metallic Laves phase compounds RCo{sub 2} (R=Gd, Tb) at finite temperatures are calculated. For other rare earth elements (light or heavy) the pure compounds display a magnetic first order transition and are not describable by our formalism. The host has two coupled lattices (R and Co) both having itinerant d electrons but only the rare earth lattice has localized f electrons. They all contribute to the magnetization of the host and also to the local moment and to the magnetic hyperfine field at the impurity. The investigation of magnetic hyperfine field in these materials then provides valuable information on the d-itinerant electrons and also on the localized (4f) magnetic moments. For the d–d electronic interaction we use the Hubbard–Stratonovich identity thus allowing the employment of functional integral in the static saddle point approximation. Our model reproduces quite well the experimental data. - Highlights: • A functional integral method in the static limit, producing site disorder, is used. • The site disorder is treated with the coherent potential approximation (CPA) • A Friedel sum rule gives a self-consistency condition for the impurity energy. • The experimental curve of hyperfine fields×temperature is very well reproduced.

  3. Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

    Science.gov (United States)

    Kovchavtsev, A. P.; Aksenov, M. S.; Tsarenko, A. V.; Nastovjak, A. E.; Pogosov, A. G.; Pokhabov, D. A.; Tereshchenko, O. E.; Valisheva, N. A.

    2018-05-01

    The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2-10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schrödinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.

  4. Effect of temperature and magnetic field on disorder in semiconductor structures

    Energy Technology Data Exchange (ETDEWEB)

    Agrinskaya, N. V., E-mail: nina.agrins@mail.ioffe.ru; Kozub, V. I. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-02-15

    We present the results of consistent theoretical analysis of various factors that may lead to influence of temperature and external magnetic field on disorder in semiconductor structures. Main attention is paid to quantum well (QW) structures in which only QWs or both QW and barriers are doped (the doping level is assumed to be close to the value corresponding to the metal–insulator transition). The above factors include (i) ionization of localized states to the region of delocalized states above the mobility edge, which is presumed to exist in the impurity band; (ii) the coexistence in the upper and lower Hubbard bands (upon doping of QWs as well as barriers); in this case, in particular, the external magnetic field determines the relative contribution of the upper Hubbard band due to spin correlations at doubly filled sites; and (iii) the contribution of the exchange interaction at pairs of sites, in which the external magnetic field can affect the relation between ferromagnetic and antiferromagnetic configurations. All these factors, which affect the structure and degree of disorder, lead to specific features in the temperature dependence of resistivity and determine specific features of the magnetoresistance. Our conclusions are compared with available experimental data.

  5. Bound magnetic polaron in a semimagnetic double quantum well

    Science.gov (United States)

    Kalpana, P.; Jayakumar, K.

    2017-09-01

    The effect of different combinations of the concentration of Mn2+ ion in the Quantum well Cd1-xinMnxin Te and the barrier Cd1-xoutMnxout Te on the Bound Magnetic Polaron (BMP) in a Diluted Magnetic Semiconductors (DMS) Double Quantum Well (DQW) has been investigated. The Schrodinger equation is solved variationally in the effective mass approximation through which the Spin Polaronic Shift (SPS) due to the formation of BMP has been estimated for various locations of the donor impurity in the DQW. The results show that the effect of the increase of Mn2+ ion composition with different combinations on SPS is predominant for On Centre Well (OCW) impurity when compared to all other impurity locations when there is no application of magnetic field (γ = 0), γ being a dimensionless parameter for the magnetic field, and the same is predominant for On Centre Barrier (OCB) impurity with the application of external magnetic field (γ = 0.15).

  6. Tuning magnetism by biaxial strain in native ZnO.

    Science.gov (United States)

    Peng, Chengxiao; Wang, Yuanxu; Cheng, Zhenxiang; Zhang, Guangbiao; Wang, Chao; Yang, Gui

    2015-07-07

    Magnetic ZnO, one of the most important diluted magnetic semiconductors (DMS), has attracted great scientific interest because of its possible technological applications in optomagnetic devices. Magnetism in this material is usually delicately tuned by the doping level, dislocations, and local structures. The rational control of magnetism in ZnO is a highly attractive approach for practical applications. Here, the tuning effect of biaxial strain on the d(0) magnetism of native imperfect ZnO is demonstrated through first-principles calculations. Our calculation results show that strain conditions have little effect on the defect formation energy of Zn and O vacancies in ZnO, but they do affect the magnetism significantly. For a cation vacancy, increasing the compressive strain will obviously decrease its magnetic moment, while tensile strain cannot change the moment, which remains constant at 2 μB. For a singly charged anion vacancy, however, the dependence of the magnetic moment on strain is opposite to that of the Zn vacancy. Furthermore, the ferromagnetic state is always present, irrespective of the strain type, for ZnO with two zinc vacancies, 2VZns. A large tensile strain is favorable for improving the Curie temperature and realizing room temperature ferromagnetism for ZnO-based native semiconductors. For ZnO with two singly charged oxygen vacancies, 2Vs, no ferromagnetic ordering can be observed. Our work points the way to the rational design of materials beyond ZnO with novel non-intrinsic functionality by simply tuning the strain in a thin film form.

  7. High field Moessbauer study of dilute Ir-(Fe) alloys

    International Nuclear Information System (INIS)

    Takabatake, Toshiro; Mazaki, Hiromasa; Shinjo, Teruya.

    1981-01-01

    The magnetic behavior of very dilute Fe impurities in Ir has been studied by means of Moessbauer measurement in external fields up to 80 kOe at 4.2 K. The saturation hyperfine field increases in proportion to the external field up to the maximum magnetic field available. This means that for a localized spin fluctuation system IrFe, the effective magnetic moment associated with Fe impurities is induced in proportion to the external field. No anomalous spectrum was observed with a very dilute sample (--10 ppm 57 Co), indicating that the interaction between impurities is responsible for the anomalous spectrum previously observed with a less homogeneous sample. (author)

  8. Defects in dilute nitrides

    International Nuclear Information System (INIS)

    Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

    2005-01-01

    We provide a brief review our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As Ga antisites and Ga i self interstitials were positively identified.Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides. (author)

  9. Different magnetic properties of rhombohedral and cubic Ni2+ doped indium oxide nanomaterials

    Directory of Open Access Journals (Sweden)

    Qingbo Sun

    2011-12-01

    Full Text Available Transition metal ions doped indium oxide nanomaterials were potentially used as a kind of diluted magnetic semiconductors in transparent spintronic devices. In this paper, the influences of Ni2+ doped contents and rhombohedral or cubic crystalline structures of indium oxide on magnetic properties were investigated. We found that the magnetic properties of Ni2+ doped indium oxide could be transferred from room temperature ferromagnetisms to paramagnetic properties with increments of doped contents. Moreover, the different crystalline structures of indium oxide also greatly affected the room temperature ferromagnetisms due to different lattice constants and almost had no effects on their paramagnetic properties. In addition, both the ferromagnetic and paramagnetic properties were demonstrated to be intrinsic and not caused by impurities.

  10. Unexpected Magnetic Semiconductor Behavior in Zigzag Phosphorene Nanoribbons Driven by Half-Filled One Dimensional Band

    Science.gov (United States)

    Du, Yongping; Liu, Huimei; Xu, Bo; Sheng, Li; Yin, Jiang; Duan, Chun-Gang; Wan, Xiangang

    2015-01-01

    Phosphorene, as a novel two-dimensional material, has attracted a great interest due to its novel electronic structure. The pursuit of controlled magnetism in Phosphorene in particular has been persisting goal in this area. In this paper, an antiferromagnetic insulating state has been found in the zigzag phosphorene nanoribbons (ZPNRs) from the comprehensive density functional theory calculations. Comparing with other one-dimensional systems, the magnetism in ZPNRs display several surprising characteristics: (i) the magnetic moments are antiparallel arranged at each zigzag edge; (ii) the magnetism is quite stable in energy (about 29 meV/magnetic-ion) and the band gap is big (about 0.7 eV); (iii) the electronic and magnetic properties is almost independent on the width of nanoribbons; (iv) a moderate compressive strain will induce a magnetic to nonmagnetic as well as semiconductor to metal transition. All of these phenomena arise naturally due to one unique mechanism, namely the electronic instability induced by the half-filled one-dimensional bands which cross the Fermi level at around π/2a. The unusual electronic and magnetic properties in ZPNRs endow them possible potential for the applications in nanoelectronic devices. PMID:25747727

  11. Magnetic properties of Mn-doped ZnO diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Liu Xuechao; Zhang Huawei; Zhang Tao; Chen Boyuan; Chen Zhizhan; Song Lixin; Shi Erwei

    2008-01-01

    A series of Mn-doped ZnO films have been prepared in different sputtering plasmas by using the inductively coupled plasma enhanced physical vapour deposition. The films show paramagnetic behaviour when they are deposited in an argon plasma. The Hall measurement indicates that ferromagnetism cannot be realized by increasing the electron concentration. However, the room-temperature ferromagnetism is obtained when the films are deposited in a mixed argon-nitrogen plasma. The first-principles calculations reveal that antiferromagnetic ordering is favoured in the case of the substitution of Mn 2+ for Zn 2+ without additional acceptor doping. The substitution of N for O (N O −) is necessary to induce ferromagnetic couplings in the Zn-Mn-O system. The hybridization between N 2p and Mn 3d provides an empty orbit around the Fermi level. The hopping of Mn 3d electrons through the empty orbit can induce the ferromagnetic coupling. The ferromagnetism in the N-doped Zn-Mn-O system possibly originates from the charge transfer between Mn 2+ and Mn 3+ via N O − . The key factor is the empty orbit provided by substituting N for O, rather than the conductivity type or the carrier concentration

  12. Absolute instability of polaron mode in semiconductor magnetoplasma

    Science.gov (United States)

    Paliwal, Ayushi; Dubey, Swati; Ghosh, S.

    2018-01-01

    Using coupled mode theory under hydrodynamic regime, a compact dispersion relation is derived for polaron mode in semiconductor magnetoplasma. The propagation and amplification characteristics of the wave are explored in detail. The analysis deals with the behaviour of anomalous threshold and amplification derived from dispersion relation, as function of external parameters like doping concentration and applied magnetic field. The results of this investigation are hoped to be useful in understanding electron-longitudinal optical phonon interplay in polar n-type semiconductor plasmas under the influence of coupled collective cyclotron excitations. The best results in terms of smaller threshold and higher gain of polaron mode could be achieved by choosing moderate doping concentration in the medium at higher magnetic field. For numerical appreciation of the results, relevant data of III-V n-GaAs compound semiconductor at 77 K is used. Present study provides a qualitative picture of polaron mode in magnetized n-type polar semiconductor medium duly shined by a CO2 laser.

  13. Thermoelectric power of small polarons in magnetic semiconductors

    International Nuclear Information System (INIS)

    Liu, N.H.; Emin, D.

    1984-01-01

    The thermoelectric power (Seebeck coefficient) α of a small polaron in both ferromagnetic and antiferromagnetic semiconductors and insulators is calculated for the first time. In particular, we obtain the contribution to the Seebeck coefficient arising from exchange interactions between the severely localized carrier (i.e., small polaron) of charge q and the spins of the host lattice. In essence, we study the heat transported along with a carrier. This heat, the Peltier heat, Pi, is related to the Seebeck coefficient by the Kelvin relation: Pi = qTα, where T is the temperature. The heat per carrier is simply the product of the temperature and the change of the entropy of the system when a small polaron is added to it. The magnetic contribution to the Seebeck coefficient is therefore directly related to the change of the magnetic entropy of the system upon introduction of a charge carrier. We explicitly treat the intrasite and intersite exchange interactions between a small polaron and the spins of a spin-1/2 system. These magnetic interactions produce two competing contributions to the Seebeck coefficient. First, adding the carrier tends to provide extra spin freedom (e.g., spin up or spin down of the carrier). This effect augments the entropy of the system, thereby producing a positive contribution to the Peltier heat. Second, however, the additional exchange between the carrier and the sites about it enhances the exchange binding among these sites. This generally reduces the energetically allowable spin configurations. The concomitant reduction of the system's entropy provides a negative contribution to the Peltier heat. At the highest of temperatures, when kT exceeds the intrasite exchange energy, the first effect dominates. Then, the Peltier heat is simply augmented by kT ln2

  14. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

    Directory of Open Access Journals (Sweden)

    Lijuan Wang

    2017-02-01

    Full Text Available Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

  15. Landau quantization effects on hole-acoustic instability in semiconductor plasmas

    Science.gov (United States)

    Sumera, P.; Rasheed, A.; Jamil, M.; Siddique, M.; Areeb, F.

    2017-12-01

    The growth rate of the hole acoustic waves (HAWs) exciting in magnetized semiconductor quantum plasma pumped by the electron beam has been investigated. The instability of the waves contains quantum effects including the exchange and correlation potential, Bohm potential, Fermi-degenerate pressure, and the magnetic quantization of semiconductor plasma species. The effects of various plasma parameters, which include relative concentration of plasma particles, beam electron temperature, beam speed, plasma temperature (temperature of electrons/holes), and Landau electron orbital magnetic quantization parameter η, on the growth rate of HAWs, have been discussed. The numerical study of our model of acoustic waves has been applied, as an example, to the GaAs semiconductor exposed to electron beam in the magnetic field environment. An increment in either the concentration of the semiconductor electrons or the speed of beam electrons, in the presence of magnetic quantization of fermion orbital motion, enhances remarkably the growth rate of the HAWs. Although the growth rate of the waves reduces with a rise in the thermal temperature of plasma species, at a particular temperature, we receive a higher instability due to the contribution of magnetic quantization of fermions to it.

  16. A nanowire magnetic memory cell based on a periodic magnetic superlattice

    International Nuclear Information System (INIS)

    Song, J-F; Bird, J P; Ochiai, Y

    2005-01-01

    We analyse the operation of a semiconductor nanowire-based memory cell. Large changes in the nanowire conductance result when the magnetization of a periodic array of nanoscale magnetic gates, which comprise the other key component of the memory cell, is switched between distinct configurations by an external magnetic field. The resulting conductance change provides the basis for a robust memory effect, which can be implemented in a semiconductor structure compatible with conventional semiconductor integrated circuits

  17. Properties of self-assembled diluted magnetic semiconductor nanostructures =

    Science.gov (United States)

    Ankiewicz, Amelia Olga Goncalves

    Este trabalho centra-se na investigacao da possibilidade de se conseguir um semicondutor magnetico diluido (SMD) baseado em ZnO. Foi levado a cabo um estudo detalhado das propriedades magneticas e estruturais de estruturas de ZnO, nomeadamente nanofios (NFs), nanocristais (NCs) e filmes finos, dopadas com metais de transicao (MTs). Foram usadas varias tecnicas experimentais para caracterizar estas estruturas, designadamente difraccao de raios-X, microscopia electronica de varrimento, ressonancia magnetica, SQUID, e medidas de transporte. Foram incorporados substitucionalmente nos sitios do Zn ioes de Mn2+ e Co2+ em ambos os NFs e NCs de ZnO. Revelou-se para ambos os ioes dopantes, que a incorporacao e heterogenea, uma vez que parte do sinal de ressonancia paramagnetica electronica (RPE) vem de ioes de MTs em ambientes distorcidos ou enriquecidos com MTs. A partir das intensidades relativas dos espectros de RPE e de modificacoes da superficie, demonstra-se ainda que os NCs exibem uma estrutura core-shell. Os resultados, evidenciam que, com o aumento da concentracao de MTs, a dimensao dos NCs diminui e aumentam as distorcoes da rede. Finalmente, no caso dos NCs dopados com Mn, obteve-se o resultado singular de que a espessura da shell e da ordem de 0.3 nm e de que existe uma acumulacao de Mn na mesma. Com o objectivo de esclarecer o papel dos portadores de carga na medicao das interaccoes ferromagneticas, foram co-dopados filmes de ZnO com Mn e Al ou com Co e Al. Os filmes dopados com Mn, revelaram-se simplesmente paramagneticos, com os ioes de Mn substitucionais nos sitios do Zn. Por outro lado, os filmes dopados com Co exibem ferromagnetismo fraco nao intrinseco, provavelmente devido a decomposicao spinodal. Foram ainda efectuados estudos comparativos com filmes de ligas de Zn1-xFexO. Como era de esperar, detectaram-se segundas fases de espinela e de oxido de ferro nestas ligas; todas as amostras exibiam curvas de histerese a 300 K. Estes resultados suportam a hipotese de que as segundas fases sao responsaveis pelo comportamento magnetico observado em muitos sistemas baseados em ZnO. Nao se observou nenhuma evidencia de ferromagnetismo mediado por portadores de carga. As experiencias mostram que a analise de RPE permite demonstrar directamente se e onde estao incorporados os ioes de MTs e evidenciam a importancia dos efeitos de superficie para dimensoes menores que 15 nm, para as quais se formam estruturas core-shell. As investigacoes realizadas no ambito desta tese demonstram que nenhuma das amostras de ZnO estudadas exibiram propriedades de um SMD intrinseco e que, no futuro, sao necessarios estudos teoricos e experimentais detalhados das interaccoes de troca entre os ioes de MTs e os atomos do ZnO para determinar a origem das propriedades magneticas observadas.

  18. Semiconductors put spin in spintronics

    International Nuclear Information System (INIS)

    Weiss, Dieter

    2000-01-01

    Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)

  19. On the effective mass in tetragonal semiconductors in the presence of an arbitrarily oriented quantizing magnetic field

    International Nuclear Information System (INIS)

    Mondal, M.; Ghatak, K.P.

    1984-01-01

    A generalized expression of the effective mass of charge carriers in tetragonal semiconductors (taking n-Cd 3 As 2 as an example) in the presence of arbitrary magnetic quantization has been derived considering the generalized dispersion relation of the conduction electrons and taking into account only the effective mass of the electrons at the Fermi surface

  20. Material degradation of liquid organic semiconductors analyzed by nuclear magnetic resonance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Fukushima, Tatsuya; Yamamoto, Junichi; Fukuchi, Masashi; Kaji, Hironori, E-mail: kaji@scl.kyoto-u.ac.jp [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan); Hirata, Shuzo; Jung, Heo Hyo; Adachi, Chihaya [Center for Organic Photonics and Electronics Research (OPERA), Kyusyu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Hirata, Osamu; Shibano, Yuki [Nissan Chemical Industries, LTD, 722-1 Tsuboi, Funabashi 274-8507 (Japan)

    2015-08-15

    Liquid organic light-emitting diodes (liquid OLEDs) are unique devices consisting only of liquid organic semiconductors in the active layer, and the device performances have been investigated recently. However, the device degradation, especially, the origin has been unknown. In this study, we show that material degradation occurs in liquid OLEDs, whose active layer is composed of carbazole with an ethylene glycol chain. Nuclear magnetic resonance (NMR) experiments clearly exhibit that the dimerization reaction of carbazole moiety occurs in the liquid OLEDs during driving the devices. In contrast, cleavages of the ethylene glycol chain are not detected within experimental error. The dimerization reaction is considered to be related to the device degradation.

  1. Design and performance of an ultra-high vacuum scanning tunneling microscope operating at dilution refrigerator temperatures and high magnetic fields.

    Science.gov (United States)

    Misra, S; Zhou, B B; Drozdov, I K; Seo, J; Urban, L; Gyenis, A; Kingsley, S C J; Jones, H; Yazdani, A

    2013-10-01

    We describe the construction and performance of a scanning tunneling microscope capable of taking maps of the tunneling density of states with sub-atomic spatial resolution at dilution refrigerator temperatures and high (14 T) magnetic fields. The fully ultra-high vacuum system features visual access to a two-sample microscope stage at the end of a bottom-loading dilution refrigerator, which facilitates the transfer of in situ prepared tips and samples. The two-sample stage enables location of the best area of the sample under study and extends the experiment lifetime. The successful thermal anchoring of the microscope, described in detail, is confirmed through a base temperature reading of 20 mK, along with a measured electron temperature of 250 mK. Atomically resolved images, along with complementary vibration measurements, are presented to confirm the effectiveness of the vibration isolation scheme in this instrument. Finally, we demonstrate that the microscope is capable of the same level of performance as typical machines with more modest refrigeration by measuring spectroscopic maps at base temperature both at zero field and in an applied magnetic field.

  2. Temperature dependence of the magnetic hyperfine field at an s–p impurity diluted in RNi_2

    International Nuclear Information System (INIS)

    Oliveira, A.L. de; Chaves, C.M.; Oliveira, N.A. de; Troper, A.

    2016-01-01

    We study the formation of local magnetic moments and magnetic hyperfine fields at an s–p impurity diluted in intermetallic Laves phase compounds RNi_2 (R=Nd, Sm, Gd, Tb, Dy) at finite temperatures. We start with a clean host and later the impurity is introduced. The host has two-coupled (R and Ni) sublattice Hubbard Hamiltonians but the Ni sublattice can be disregarded because its d band, being full, is magnetically ineffective. Also, the effect of the 4f electrons of R is represented by the polarization they produce on the d band. This leaves us with a lattice of effective rare earth R-ions with polarized electrons. For the dd electronic interaction we use the Hubbard–Stratonovich identity in a functional integral approach in the static saddle point approximation. - Highlights: • Functional integral method in the static limit, producing site disorder, is used. • The site disorder is treated with the Coherent Potential Approximation (CPA). • Non magnetic Ni generates an effective lattice with only a polarized R d band. • The effective R lattice differ from the pure R metal: Results and Discussions. • The experimental curve of hyperfine fields × temperature are very well reproduced.

  3. Effect of P-anion codoping on the Curie temperature of GaMnAs diluted magnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Bouzerar, R.; Máca, František; Kudrnovský, Josef; Bergqvist, L.

    2010-01-01

    Roč. 82, č. 3 (2010), 035207/1-035207/6 ISSN 1098-0121 R&D Projects: GA ČR GA202/09/0775; GA ČR(CZ) GC202/07/J047 Institutional research plan: CEZ:AV0Z10100520 Keywords : GaMnAs * calculations * Curie temperature * defects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.772, year: 2010

  4. Bound magnetic polaron in Zn-rich cobalt-doped ZnSe nanowires

    Science.gov (United States)

    Hou, Lipeng; Pan, Longfei; Liang, Bianbian; Liu, Yuting; Zhang, Li; Bukhtiar, Arfan; Shi, Lijie; Liu, Ruibin; Zou, Bingsuo

    2018-02-01

    The micro-luminescence spectra of the diluted magnetic semiconductor (DMS) can reflect the spin-exciton interaction and related relaxation process. Here the micro-photoluminescence (micro-PL) spectra and PL lifetime measurements have been done on an individual ferromagnetic (FM)-coupled cobalt (Co) doped zinc selenide (ZnSe) nanowire. There occurs a double-peak profile in its near bandedge emission spectrum: the first peak is from free exciton (FX) and the second comes from magnetic polaron (MP). In their temperature dependent PL spectra, the MP emission peak demonstrates obviously temperature-independent behavior, in contrast to the behaviors of FX and reported exciton MP in nanobelt. It is found that in this Co(II) doped ZnSe nanowires, this MP’s temperature-independent emission is related to the coupling between exciton and a FM nanocluster (↑↑↓). The nanocluster is likely due to the interaction of Se vacancies of the wide bandgap semiconductors with the antiferromagnetic (AFM) arrangement transition metal (TM) ions in these Se-deficient Co doped ZnSe nanowires. These results reflect that the AFM coupling TM ions pair can give rise to FM behavior with the involvement of positive charge defect, also indicating that the micro-luminescence detection can be used to study the magnetic coupling in DMS.

  5. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  6. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  7. Effect of nickel doping concentration on structural and magnetic properties of ultrafine diluted magnetic semiconductor ZnO nanoparticles

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.

    2009-01-01

    The ZnO:Ni 2+ nanoparticles of mean size 2-12 nm were synthesized at room temperature by the simple co-precipitation method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The wurtzite structure of ZnO gradually degrades with the increasing Ni doping concentration and an additional NiO-associated diffraction peak was observed above 15% of Ni 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Ni 2+ doping concentration was investigated using a vibrating sample magnetometer (VSM). Initially, these nanoparticles showed strong ferromagnetic behavior, however, at higher doping percentage of Ni 2+ , the ferromagnetic behavior was suppressed and paramagnetic nature was observed. The enhanced antiferromagnetic interaction between neighboring Ni-Ni ions suppressed the ferromagnetism at higher doping concentrations of Ni 2+ .

  8. Magneto-optical spectroscopy of diluted magnetic oxides TiO2-δ: Co

    International Nuclear Information System (INIS)

    Gan'shina, E.A.; Granovsky, A.B.; Orlov, A.F.; Perov, N.S.; Vashuk, M.V.

    2009-01-01

    We report an experimental study on transversal Kerr effect (TKE) in magnetic oxide semiconductors TiO 2-δ :Co. The TiO 2-δ : Co thin films were deposited on LaAlO 3 (0 0 1) substrates by magnetron sputtering in the argon-oxygen atmosphere at oxygen partial pressure of 2x10 -6 -2x10 -4 Torr. It was obtained that TKE spectra in ferromagnetic samples are extremely sensitive to the Co-volume fraction, the crystalline structure, and technology parameters. The observed well-pronounced peaks in TKE spectra for anatase Co-doped TiO 2-δ films at low Co ( 2-δ matrix that indicates on intrinsic ferromagnetism in these samples. With increase of Co-volume fraction up to 5-8% the fine structure of TKE spectra disappears and magneto-optical response in reflection mode becomes larger than that for thick Co films

  9. Optical properties of semiconductor nanostructures in magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Grochol, M.

    2007-04-03

    In this work, the near bandgap linear optical properties of semiconductor quantum structures under applied magnetic field are investigated. First, the exciton theory is developed starting with the one-electron Hamiltonian in a crystal, continuing with the Luttinger and Bir-Pikus Hamiltonian, and ending with the exciton Hamiltonian in the envelope function approximation. Further, concentrating on the quantum well and thus assuming strong confinement in the growth direction, the motion parallel and perpendicular to the xy-plane is factorized leading to the well-known single sublevel approximation. A magnetic field perpendicular to the xy-plane is applied, and a general theorem describing the behavior of the energy eigenvalues is derived. The strain calculation within the isotropic elasticity approach is described in detail. The Schroedinger equation is solved numerically for both the full model and the factorization with artificially generated disorder potentials. Furthermore the statistical properties of the disorder in a real quantum well have been analyzed. In particular, temperature dependent photoluminescence spectra and diamagnetic shift statistics, have been compared with the experimental ones and very good agreement has been found. The second part of this thesis deals predominantly with highly symmetrical structures embedded in the quantum well: namely quantum rings and dots. First, adopting an ansatz for the wave function, the Hamiltonian matrix is derived discussing which matrix elements are non-zero according to the symmetry of the potential. Additionally, the expectation values of the current and magnetization operators are evaluated. Then, concentrating on the case of the highest (circular) symmetry, the model of zero width ring is introduced. Within this model the close relation between the oscillatory component of the exciton energy (exciton Aharonov-Bohm effect) and the persistent current is revealed. Examples for different material systems follow

  10. Synthesis and characterization of vanadium doped SnO2 diluted magnetic semiconductor nanoparticles with enhanced photocatalytic activities

    International Nuclear Information System (INIS)

    Mazloom, J.; Ghodsi, F.E.; Golmojdeh, H.

    2015-01-01

    Highlights: • Pure and V-doped SnO 2 nanoparticles were synthesized using a facile sol–gel route. • The V 4+ ions were incorporated into the SnO 2 lattice and located at the Sn 4+ sites. • TEM images reveled that by increasing the doping content, average grain size decreased. • We show that the V-doped SnO 2 is more photoactive than undoped SnO 2 . • The V-doped SnO 2 nanoparticles exhibited ferromagnetism at room temperature. - Abstract: Vanadium doped SnO 2 nanoparticles were synthesized by a facile sol–gel method. Different analytical techniques including TG/DTG, XRD, XPS, VSM and PL were used to investigate the influence of dopant concentration on structural, morphological, compositional, magnetic and optical properties of prepared nanoparticles. The XRD study showed a dominant tetragonal structure. The X-ray photoelectron spectroscopy proved the presence of vanadium as V 4+ species. TEM image revealed that particle size decrease by doping. It was found that room temperature ferromagnetic (RTFM) behavior is strongly dependent on vanadium dopant content and the magnetic saturation dropped rapidly with increasing V content, which can be explained reasonably through bound magnetic polaron (BMP) model. A quenching in green luminescence intensity was observed in V-doped SnO 2 compared to undoped sample. The 5% V-doped SnO 2 sample showed better photocatalytic activity than undoped one in decomposing methylene blue and rhodamine B

  11. Stepping Stone Mechanism: Carrier-Free Long-Range Magnetism Mediated by Magnetized Cation States in Quintuple Layer

    Science.gov (United States)

    Chan, Chunkai; Zhang, Xiaodong; Zhang, Yiou; Tse, Kinfai; Deng, Bei; Zhang, Jingzhao; Zhu, Junyi

    2018-01-01

    The long-range magnetism observed in group-V tellurides quintuple layers is the only working example of carrier-free dilute magnetic semiconductors (DMS), whereas the physical mechanism is unclear, except the speculation on the band topology enhanced van Vleck paramagnetism. Based on DFT calculations, we find a stable long-range ferromagnetic order in a single quintuple layer of Cr-doped Bi2Te3 or Sb2Te3, with the dopant separation more than 9 Å. This configuration is the global energy minimum among all configurations. Different from the conventional super exchange theory, the magnetism is facilitated by the lone pair derived anti-bonding states near the cations. Such anti-bonding states work as stepping stones merged in the electron sea and conduct magnetism. Further, spin orbit coupling induced band inversion is found to be insignificant in the magnetism. Therefore, our findings directly dismiss the common misbelief that band topology is the only factor that enhances the magnetism. We further demonstrate that removal of the lone pair derived states destroys the long-range magnetism. This novel mechanism sheds light on the fundamental understanding of long-range magnetism and may lead to discoveries of new classes of DMS. Supported by Chinese University of Hong Kong (CUHK) under Grant No 4053084, University Grants Committee of Hong Kong under Grant No 24300814, and the Start-up Funding of CUHK.

  12. Extrinsic and intrinsic magnetic properties of Co1-x Fex Sb3

    International Nuclear Information System (INIS)

    Amornpitoksuk, P.; Ravot, D.; Mauger, A.; Tedenac, J.C.

    2007-01-01

    We report magnetic properties of iron in Co 1-x Fe x Sb 3 for x in the range 0 3+ in the low spin d 5 configuration in presence of a strong crystal field that screens the orbital momentum. The magnetic properties give evidence that a small fraction of iron is spin-frozen in magnetite ferrimagnetic clusters, and antiferromagnetic FeO clusters. Because both types of clusters represent only very minor phases, their detection by the usual analytical means such as X-rays is not possible. The remaining part is diluted in the matrix to form a semimagnetic semiconductor characterized by a Fe-Fe nearest-neighbor exchange interaction J that is antiferromagnetic, with |J|/k B ∼19.6 degree K

  13. Effects of magnetic field on the pseudogap in the Kondo semiconductor CeRhAs

    International Nuclear Information System (INIS)

    Yoshii, S.; Kindo, K.; Sasakawa, T.; Suemitsu, T.; Takabatake, T.

    2004-01-01

    The magnetization and magnetoresistance of single-crystalline CeRhAs, which is the so-called Kondo semiconductor with an energygap of ∼280 K, have been measured in pulsed magnetic field up to 55 T. At 1.3 K, the slopes of the magnetization M for H parallel b and H parallel c decrease slightly at around 16 and 13 T, respectively, while M(H parallel a) shows monotonous dependence. Weak anisotropy is observed on the whole, M b (H)>M c (H)>M a (H). M b (H) reaches only to 0.07 μ B /f.u. at 55 T, which indicates the non-magnetic state being stable even in the high magnetic field. Strongly anisotropic behaviors are observed in the magnetoresistance. The longitudinal magnetoresistance (LMR) along the b- and c-axis show characteristic structures partly associated with the anomalies of the magnetizations, while the LMR along the a-axis shows only a broad maximum. The transverse magnetoresistances (TMR) for I parallel b and I parallel c follow the relation Δρ(H)/ρ(0)∝H α (α=1.5-1.7) below 5 T, whereas TMR for I parallel a exhibits only the weak field dependence. These results suggest the existence of a narrow and anisotropic structure within the wide pseudogap structure in the density of states

  14. Phase diagram as a function of temperature and magnetic field for magnetic semiconductors

    OpenAIRE

    Gonzalez, I.; Castro, J.; Baldomir, D.

    2002-01-01

    Using an extension of the Nagaev model of phase separation (E.L. Nagaev, and A.I. Podel'shchikov, Sov. Phys. JETP, 71 (1990) 1108), we calculate the phase diagram for degenerate antiferromagnetic semiconductors in the T-H plane for different current carrier densities. Both, wide-band semiconductors and 'double-exchange' materials, are investigated.

  15. Phase diagram as a function of temperature and magnetic field for magnetic semiconductors

    Science.gov (United States)

    González, I.; Castro, J.; Baldomir, D.

    2002-10-01

    Using an extension of the Nagaev model of phase separation [E. L. Nagaev and A. I. Podel'shchikov, Sov. Phys. JETP, 71, 1108 (1990)] we calculate the phase diagram for degenerate antiferromagnetic semiconductors in the T-H plane for different current carrier densities. Both wide-band semiconductors and double-exchange materials are investigated.

  16. Phase diagrams of site diluted ferromagnetic thin film

    International Nuclear Information System (INIS)

    Hamedoun, M.; Bouslykhane, K.; Bakrim, H.; Hourmatallah, A.; Benzakour, N.; Masrour, R.

    2006-01-01

    The phase transition properties of Ising, classical XY and Heisenberg of diluted ferromagnetic thin film are studied by the method of exact high-temperature series expansions extrapolated with the Pade approximants method. The reduced critical temperature τ c of the diluted ferromagnetic thin films is studied as a function of film thickness L and the exchange interactions in the bulk J b , in the surface J s and between surface and nearest-neighbour layer J - bar . It is found that τ c increases with the exchange interactions of surface and L. The magnetic phase diagram (τ c versus dilution x) is obtained. A critical value of the surface exchange interaction above which the surface magnetism appears is obtained. The dependence of the critical parameter of surface reduced coupling R 2 c as a function of the dilution x and the ratio of the exchange interaction between the surface and nearest-neighbour layer to the bulk one R 1 for the three studied models has been investigated. The percolation threshold is defined as the concentration x p at which τ c =0. The obtained values are x p ∼0.2 in the bulk and x p ∼0.4 at the surface

  17. Material degradation of liquid organic semiconductors analyzed by nuclear magnetic resonance spectroscopy

    Directory of Open Access Journals (Sweden)

    Tatsuya Fukushima

    2015-08-01

    Full Text Available Liquid organic light-emitting diodes (liquid OLEDs are unique devices consisting only of liquid organic semiconductors in the active layer, and the device performances have been investigated recently. However, the device degradation, especially, the origin has been unknown. In this study, we show that material degradation occurs in liquid OLEDs, whose active layer is composed of carbazole with an ethylene glycol chain. Nuclear magnetic resonance (NMR experiments clearly exhibit that the dimerization reaction of carbazole moiety occurs in the liquid OLEDs during driving the devices. In contrast, cleavages of the ethylene glycol chain are not detected within experimental error. The dimerization reaction is considered to be related to the device degradation.

  18. Thermodynamics of a dilute XX chain in a field

    Energy Technology Data Exchange (ETDEWEB)

    Timonin, P. N., E-mail: pntim@live.ru [Southern Federal University, Physics Research Institute (Russian Federation)

    2016-06-15

    Gapless phases in ground states of low-dimensional quantum spin systems are rather ubiquitous. Their peculiarity is a remarkable sensitivity to external perturbations due to permanent criticality of such phases manifested by a slow (power-low) decay of pair correlations and the divergence of the corresponding susceptibility. A strong influence of various defects on the properties of the system in such a phase can then be expected. Here, we consider the influence of vacancies on the thermodynamics of the simplest quantum model with a gapless phase, the isotropic spin-1/2 XX chain. The existence of the exact solution of this model gives a unique opportunity to describe in detail the dramatic effect of dilution on the gapless phase—the appearance of an infinite series of quantum phase transitions resulting from level crossing under the variation of a longitudinal magnetic field. We calculate the jumps in the field dependences of the ground-state longitudinal magnetization, susceptibility, entropy, and specific heat appearing at these transitions and show that they result in a highly nonlinear temperature dependence of these parameters at low T. Also, the effect of enhancement of the magnetization and longitudinal correlations in the dilute chain is established. The changes of the pair spin correlators under dilution are also analyzed. The universality of the mechanism of the quantum transition generation suggests that similar effects of dilution can also be expected in gapless phases of other low-dimensional quantum spin systems.

  19. Ferrimagnetic Properties of Bond Dilution Mixed Blume-Capel Model with Random Single-Ion Anisotropy

    International Nuclear Information System (INIS)

    Liu Lei; Yan Shilei

    2005-01-01

    We study the ferrimagnetic properties of spin 1/2 and spin-1 systems by means of the effective field theory. The system is considered in the framework of bond dilution mixed Blume-Capel model (BCM) with random single-ion anisotropy. The investigation of phase diagrams and magnetization curves indicates the existence of induced magnetic ordering and single or multi-compensation points. Special emphasis is placed on the influence of bond dilution and random single-ion anisotropy on normal or induced magnetic ordering states and single or multi-compensation points. Normal magnetic ordering states take on new phase diagrams with increasing randomness (bond and anisotropy), while anisotropy induced magnetic ordering states are always occurrence no matter whether concentration of anisotropy is large or small. Existence and disappearance of compensation points rely strongly on bond dilution and random single-ion anisotropy. Some results have not been revealed in previous papers and predicted by Neel theory of ferrimagnetism.

  20. The phase diagrams and the order parameters of the diluted superlattice with antiferromagnetic interface coupling

    International Nuclear Information System (INIS)

    Oubelkacem, A.; El Aouad, N.; Bentaleb, M.; Laaboudi, B.; Saber, M.

    2004-01-01

    Using the effective field theory with a probability distribution technique that accounts for the self-spin correlation functions, the magnetic properties of the diluted Ising superlattice consisting of two ferromagnetic materials A and B, with L a layers of diluted spins S a =((1)/(2)) and L b layers of diluted spins S b =1 with antiferromagnetic interface coupling are examined. For fixed values of the reduced exchange interactions and the concentration c of magnetic atoms, the phase diagrams, the two sublattice magnetizations and the total magnetization for the superlattice with the same spin S a =S b =((1)/(2)) and for S a =((1)/(2)), S b =1 are studied as a function of the temperature. We find a number of characteristic phenomena. In particular, the effect of the concentration c of magnetic atoms, the interlayer coupling and the layer thickness on both the compensation temperature and the magnetization profiles are clarified

  1. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

    Science.gov (United States)

    Simov, K. R.; Glans, P.-A.; Jenkins, C. A.; Liberati, M.; Reinke, P.

    2018-01-01

    Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn-Mn bonding.

  2. Magnetic susceptibility of Dirac fermions, Bi-Sb alloys, interacting Bloch fermions, dilute nonmagnetic alloys, and Kondo alloys

    Energy Technology Data Exchange (ETDEWEB)

    Buot, Felix A., E-mail: fbuot@gmu.edu [Computational Materials Science Center, George Mason University, Fairfax, VA 22030 (United States); TCSE Center, Spintronics Group, Physics Department, University of San Carlos, Talamban, Cebu 6000 (Philippines); C& LB Research Institute, Carmen, Cebu 6005 (Philippines); Otadoy, Roland E.S.; Rivero, Karla B. [TCSE Center, Spintronics Group, Physics Department, University of San Carlos, Talamban, Cebu 6000 (Philippines)

    2017-03-01

    Wide ranging interest in Dirac Hamiltonian is due to the emergence of novel materials, namely, graphene, topological insulators and superconductors, the newly-discovered Weyl semimetals, and still actively-sought after Majorana fermions in real materials. We give a brief review of the relativistic Dirac quantum mechanics and its impact in the developments of modern physics. The quantum band dynamics of Dirac Hamiltonian is crucial in resolving the giant diamagnetism of bismuth and Bi-Sb alloys. Quantitative agreement of the theory with the experiments on Bi-Sb alloys has been achieved, and physically meaningful contributions to the diamagnetism has been identified. We also treat relativistic Dirac fermion as an interband dynamics in uniform magnetic fields. For the interacting Bloch electrons, the role of translation symmetry for calculating the magnetic susceptibility avoids any approximation to second order in the field. The expressions for magnetic susceptibility of dilute nonmagnetic alloys give a firm theoretical foundation of the empirical formulas used in fitting experimental results. The unified treatment of all the above calculations is based on the lattice Weyl-Wigner formulation of discrete phase-space quantum mechanics. For completeness, the magnetic susceptibility of Kondo alloys is also given since Dirac fermions in conduction band and magnetic impurities exhibit Kondo effect.

  3. Density functional theory study of bulk and single-layer magnetic semiconductor CrPS4

    Science.gov (United States)

    Zhuang, Houlong L.; Zhou, Jia

    2016-11-01

    Searching for two-dimensional (2D) materials with multifunctionality is one of the main goals of current research in 2D materials. Magnetism and semiconducting are certainly two desirable functional properties for a single 2D material. In line with this goal, here we report a density functional theory (DFT) study of bulk and single-layer magnetic semiconductor CrPS4. We find that the ground-state magnetic structure of bulk CrPS4 exhibits the A-type antiferromagnetic ordering, which transforms to ferromagnetic (FM) ordering in single-layer CrPS4. The calculated formation energy and phonon spectrum confirm the stability of single-layer CrPS4. The band gaps of FM single-layer CrPS4 calculated with a hybrid density functional are within the visible-light range. We also study the effects of FM ordering on the optical absorption spectra and band alignments for water splitting, indicating that single-layer CrPS4 could be a potential photocatalyst. Our work opens up ample opportunities of energy-related applications of single-layer CrPS4.

  4. On the influence of the hydrodynamic interactions on the aggregation rate of magnetic spheres in a dilute suspension

    International Nuclear Information System (INIS)

    Cunha, F.R.; Couto, H.L.G.

    2011-01-01

    Magnetostatic attraction may lead to formation of aggregates in stable colloidal magnetic suspensions and magneto-rheological suspensions. The aggregation problem of magnetic composites under differential sedimentation is a key problem in the control of the instability of non-Brownian suspensions. Against these attractive forces are the electrostatic repulsion and the hydrodynamic interactions acting as stabilizing effects to the suspension. This work concerns an investigation of the pairwise interaction of magnetic particles in a dilute sedimenting suspension. We focus attention on suspensions where the Peclet number is large (negligible Brownian motion) and where the Reynolds number (negligible inertia) is small. The suspension is composed of magnetic micro-spheres of different radius and density immersed in a Newtonian fluid moving under the action of gravity. The theoretical calculations are based on direct computations of the hydrodynamic and the magnetic interactions among the rigid spheres in the regime of low particle Reynolds number. From the limiting trajectory in which aggregation occurs, we calculate the collision efficiency, representing the dimensionless rate at which aggregates are formed. The numerical results show clear evidence that the hydrodynamic interactions are of fundamental relevance in the process of magnetic particle aggregation. We compare the stabilizing effects between electrostatic repulsion and hydrodynamic interactions.

  5. On the influence of the hydrodynamic interactions on the aggregation rate of magnetic spheres in a dilute suspension

    Energy Technology Data Exchange (ETDEWEB)

    Cunha, F.R., E-mail: frcunha@unb.b [Universidade de Brasilia, Faculdade de Tecnologia, Depto. de Engenharia Mecanica, Grupo de Mecanica dos Fluidos de Escoamentos Complexos - VORTEX, Campus Universitario Darcy Ribeiro, 70910-900, Brasilia, DF (Brazil); Couto, H.L.G. [Universidade de Brasilia, Faculdade de Tecnologia, Depto. de Engenharia Mecanica, Grupo de Mecanica dos Fluidos de Escoamentos Complexos - VORTEX, Campus Universitario Darcy Ribeiro, 70910-900, Brasilia, DF (Brazil)

    2011-01-15

    Magnetostatic attraction may lead to formation of aggregates in stable colloidal magnetic suspensions and magneto-rheological suspensions. The aggregation problem of magnetic composites under differential sedimentation is a key problem in the control of the instability of non-Brownian suspensions. Against these attractive forces are the electrostatic repulsion and the hydrodynamic interactions acting as stabilizing effects to the suspension. This work concerns an investigation of the pairwise interaction of magnetic particles in a dilute sedimenting suspension. We focus attention on suspensions where the Peclet number is large (negligible Brownian motion) and where the Reynolds number (negligible inertia) is small. The suspension is composed of magnetic micro-spheres of different radius and density immersed in a Newtonian fluid moving under the action of gravity. The theoretical calculations are based on direct computations of the hydrodynamic and the magnetic interactions among the rigid spheres in the regime of low particle Reynolds number. From the limiting trajectory in which aggregation occurs, we calculate the collision efficiency, representing the dimensionless rate at which aggregates are formed. The numerical results show clear evidence that the hydrodynamic interactions are of fundamental relevance in the process of magnetic particle aggregation. We compare the stabilizing effects between electrostatic repulsion and hydrodynamic interactions.

  6. Dilution Confusion: Conventions for Defining a Dilution

    Science.gov (United States)

    Fishel, Laurence A.

    2010-01-01

    Two conventions for preparing dilutions are used in clinical laboratories. The first convention defines an "a:b" dilution as "a" volumes of solution A plus "b" volumes of solution B. The second convention defines an "a:b" dilution as "a" volumes of solution A diluted into a final volume of "b". Use of the incorrect dilution convention could affect…

  7. Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review

    Science.gov (United States)

    Sun, Jian; Kosel, Jürgen

    2013-01-01

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device’s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. PMID:28809321

  8. Magnetic properties of zigzag (0,9 GaAs nanotube doped with 3d transition metals

    Directory of Open Access Journals (Sweden)

    R Fathi

    2016-06-01

    Full Text Available of 3d transition metals (Sc, Ti, Cr, Mn , Fe, Co, Ni in both far and close situations were studied based on spin polarised density functional theory using the generalized gradient approximation (LDA with SIESTA code. The electronic structures show that zigzag (0,9 GaAs nanotubes are non-magnetic semiconductors with direct band gap. It was revealed that doping of 11.11 % Fe and Mn concentrations substituted in Ga sites in ferromagnetic phase in far situation and Cr sites in ferromagnetic phase in near situation introduces half metallic behavior with %100 spin polarization. The unique structure of spin polarised energy levels is primarily attributed to strong hybridization of 3d transition metal and its nearest-neighbor As-4p orbitals. The results of this study can be useful for empirical studies on diluted magnetic semiconductors (DMSs and systemic investigation in 3d transitional metals. We suggest that GaAs nanotubes doped by transition metals would have a potential application as a spin polarised electron source for spintronic devices in the future.

  9. Rutile-type Co doped SnO{sub 2} diluted magnetic semiconductor nanoparticles: Structural, dielectric and ferromagnetic behavior

    Energy Technology Data Exchange (ETDEWEB)

    Mehraj, Sumaira, E-mail: sumairamehraj07@gmail.com [Department of Applied Physics, Aligarh Muslim University, Aligarh-202002 (India); Shahnawaze Ansari, M. [Center of Nanotechnology, King Abdulaziz University, Jeddah-21589 (Saudi Arabia); Alimuddin [Department of Applied Physics, Aligarh Muslim University, Aligarh-202002 (India)

    2013-12-01

    Nanoparticles of basic composition Sn{sub 1−x}Co{sub x}O{sub 2} (x=0.00, 0.01, 0.03, 0.05 and 0.1) were synthesized through the citrate-gel method and were characterized for structural properties using X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FT-IR). XRD analysis of the powder samples sintered at 500 °C for 12 h showed single phase rutile type tetragonal structure and the crystallite size decreased as the cobalt content was increased. FT-IR spectrum displayed various bands that came due to fundamental overtones and combination of O–H, Sn–O and Sn–O–Sn entities. The effect of Co doping on the electrical and magnetic properties was studied using dielectric spectroscopy and vibrating sample magnetometer (VSM) at room temperature. The dielectric parameters (ε, tan δ and σ{sub ac}) show their maximum value for 10% Co doping. The dielectric loss shows anomalous behavior with frequency where it exhibits the Debye relaxation. The variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to the Maxwell–Wagner type of interfacial polarization in general and hopping of charge between Sn{sup 2+} and Sn{sup 4+} as well as between Co{sup 2+} and Co{sup 3+} ions. The complex impedance analysis was used to separate the grain and grain boundary contributions in the system which shows that the conduction process in grown nanoparticles takes place predominantly through grain boundary volume. Hysteresis loops were observed clearly in M–H curves from 0.01 to 0.1% Co doped SnO{sub 2} samples. The saturation magnetization of the doped samples increased slightly with increase of Co concentration. However pure SnO{sub 2} displayed paramagnetism which vanished at higher values of magnetic field.

  10. Dephasing of optically generated electron spins in semiconductors

    International Nuclear Information System (INIS)

    Idrish Miah, M.

    2010-01-01

    Dephasing of optically generated electron spins in the presence of the external magnetic field and electric bias in semiconductor nano-structures has been studied by time- and polarization-resolved spectrometry. The obtained experimental data are presented in dependence of the strength of the magnetic field. The optically generated electron-spin precession frequency and dephasing time and rate are estimated. It is found that both the spin precession frequency and dephasing rate increase linearly with the external magnetic field up to about 9 T. However, the spin dephasing time is within sub-μs and is found to decrease exponentially with the strength of the external magnetic field. The results are discussed by exploring possible mechanisms of spin dephasing in low-dimensional semiconductor structures, where the quantum-confinement persists within the nano-range.

  11. Dephasing of optically generated electron spins in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Idrish Miah, M., E-mail: m.miah@griffith.edu.a [Department of Physics, University of Chittagong, Chittagong, Chittagong - 4331 (Bangladesh)

    2010-09-13

    Dephasing of optically generated electron spins in the presence of the external magnetic field and electric bias in semiconductor nano-structures has been studied by time- and polarization-resolved spectrometry. The obtained experimental data are presented in dependence of the strength of the magnetic field. The optically generated electron-spin precession frequency and dephasing time and rate are estimated. It is found that both the spin precession frequency and dephasing rate increase linearly with the external magnetic field up to about 9 T. However, the spin dephasing time is within sub-{mu}s and is found to decrease exponentially with the strength of the external magnetic field. The results are discussed by exploring possible mechanisms of spin dephasing in low-dimensional semiconductor structures, where the quantum-confinement persists within the nano-range.

  12. Effect of Ga doping and point defect on magnetism of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Qingyu [College of Science, Inner Mongolia University of Technology, 010051 Hohhot (China); Zhao, Chunwang, E-mail: cwzhao@shmtu.edu.cn [College of Arts and Sciences, Shanghai Maritime University, 201306 Shanghai (China); Jia, Xiaofang; Qu, Lingfeng [College of Science, Inner Mongolia University of Technology, 010051 Hohhot (China)

    2017-02-01

    The combined influence mechanism of Ga doping and Zn vacancy or O vacancy on magnetism of ZnO is studied using the first-principle calculation. The coexistence of Ga doping and Zn vacancy can achieve a Curie temperature higher than room temperature and the Ga doped ZnO system is a p-type diluted degenerate semiconductor with metalized ferromagnetism. The magnetism of the doping system of Ga doping and Zn vacancy is mainly contributed by double-exchange interaction through the holes of Zn vacancy taking carrier as medium. However, the system of Ga doping and O vacancy is non-magnetic. In the coexistence of Ga doping and Zn vacancy or O vacancy, a close relative distance between doping and vacancy will reduce the formation energy of the doping system but increase the easiness of doping and vacancy, as well as enhance the stability of the doping system.

  13. Tunnel barrier and noncollinear magnetization effects on shot noise in ferromagnetic/semiconductor/ferromagnetic heterojunctions

    International Nuclear Information System (INIS)

    An Xingtao; Liu Jianjun

    2008-01-01

    Based on the scattering approach, we investigate transport properties of electrons in a one-dimensional waveguide that contains a ferromagnetic/semiconductor/ferromagnetic heterojunction and tunnel barriers in the presence of Rashba and Dresselhaus spin-orbit interactions. We simultaneously consider significant quantum size effects, quantum coherence, Rashba and Dresselhaus spin-orbit interactions and noncollinear magnetizations. It is found that the tunnel barrier plays a decisive role in the transmission coefficient and shot noise of the ballistic spin electron transport through the heterojunction. When the small tunnel barriers are considered, the transport properties of electrons are quite different from those without tunnel barriers

  14. Magnetically Suspended Linear Pulse Motor for Semiconductor Wafer Transfer in Vacuum Chamber

    Science.gov (United States)

    Moriyama, Shin-Ichi; Hiraki, Naoji; Watanabe, Katsuhide; Kanemitsu, Yoichi

    1996-01-01

    This paper describes a magnetically suspended linear pulse motor for a semiconductor wafer transfer robot in a vacuum chamber. The motor can drive a wafer transfer arm horizontally without mechanical contact. In the construction of the magnetic suspension system, four pairs of linear magnetic bearings for the lift control are used for the guidance control as well. This approach allows us to make the whole motor compact in size and light in weight. The tested motor consists of a double-sided stator and a transfer arm with a width of 50 mm and a total length of 700 mm. The arm, like a ladder in shape, is designed as the floating element with a tooth width of 4 mm (a tooth pitch of 8 mm). The mover mass is limited to about 1.6 kg by adopting such an arm structure, and the ratio of thrust to mover mass reaches to 3.2 N/kg under a broad air gap (1 mm) between the stator teeth and the mover teeth. The performance testing was carried out with a transfer distance less than 450 mm and a transfer speed less than 560 mm/s. The attitude of the arm was well controlled by the linear magnetic bearings with a combined use, and consequently the repeatability on the positioning of the arm reached to about 2 micron. In addition, the positioning accuracy was improved up to about 30 micron through a compensation of the 128-step wave current which was used for the micro-step drive with a step increment of 62.5 micron.

  15. Nonlinear optics response of semiconductor quantum wells under high magnetic fields

    International Nuclear Information System (INIS)

    Chemla, D.S.

    1993-07-01

    Recent investigations on the nonlinear optical response of semiconductor quantum wells in a strong perpendicular magnetic field, H, are reviewed. After some introductory material the evolution of the linear optical properties of GaAs QW's as a function of H is discussed; an examination is made of how the magneto-excitons (MX) extrapolate continuously between quasi-2D QW excitons (X) when H = 0, and pairs of Landau levels (LL) when H → ∞. Next, femtosecond time resolved investigations of their nonlinear optical response are presented; the evolution of MX-MX interactions with increasing H is stressed. Finally, how, as the dimensionality is reduced by application of H, the number of scattering channels is limited and relaxation of electron-hole pairs is affected. How nonlinear optical spectroscopy can be exploited to access the relaxation of angular momentum within magneto-excitons is also discussed

  16. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge

    Directory of Open Access Journals (Sweden)

    K. R. Simov

    2018-01-01

    Full Text Available Mn doping of group-IV semiconductors (Si/Ge is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn–Mn bonding.

  17. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    Energy Technology Data Exchange (ETDEWEB)

    Teubert, Joerg

    2008-07-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  18. Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys

    International Nuclear Information System (INIS)

    Teubert, Joerg

    2008-01-01

    The first part of this work addresses the influence of those isovalent localized states on the electronic properties of (B,Ga,In)As. Most valuable were the measurements under hydrostatic pressure that revealed a pressure induced metal-insulator transition. One of the main ideas in this context is the trapping of carriers in localized B-related cluster states that appear in the bandgap at high pressure. The key conclusion that can be drawn from the experimental results is that boron atoms seem to have the character of isovalent electron traps, rendering boron as the first known isovalent trap induced by cationic substitution. In the second part, thermoelectric properties of (B,Ga,In)As and (Ga,In)(N,As) are studied. It was found that although the electric-field driven electronic transport in n-type (Ga,In)(N,As) and (B,Ga,In)As differs considerably from that of n-type GaAs, the temperature-gradient driven electronic transport is very similar for the three semiconductors, despite distinct differences in the conduction band structure of (Ga,In)(N,As) and (B,Ga,In)As compared to GaAs. The third part addresses the influence of magnetic interactions on the transport properties near the metal-insulator transition (MIT). Here, two scenarios are considered: Firstly the focus is set on ZnMnSe:Cl, a representative of so called dilute magnetic semiconductors (DMS). In this material Mn(2+) ions provide a large magnetic moment due to their half filled inner 3d-shell. It is shown that magnetic interactions in conjunction with disorder effects are responsible for the unusual magnetotransport behavior found in this and other II-Mn-VI semiconductor alloys. In the second scenario, a different magnetic compound, namely InSb:Mn, is of interest. It is a representative of the III-Mn-V DMS, where the magnetic impurity Mn serves both as the source of a large localized magnetic moment and as the source of a loosely bound hole due to its acceptor character. Up to now, little is known about

  19. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    International Nuclear Information System (INIS)

    Daqiq, Reza; Ghobadi, Nader

    2016-01-01

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

  20. Study of amorphous semiconductors doped with rare earths (Gd and Er) and conducting polymers by EPR techniques and magnetic susceptibility

    International Nuclear Information System (INIS)

    Sercheli, Mauricio da Silva

    1999-01-01

    This thesis involves the study of amorphous semiconductors and conducting polymers, which have been characterized by EPR and magnetic susceptibility measurements, and to a lesser extent by Raman spectroscopy and RBS. The semiconductors were studied using thin films of silicon doped with rare earth metals, e.g. erbium and gadolinium, which had their magnetic properties studied. Using these studies we could determine the state of valence of the rare earths as well as their concentrations in the silicon matrix. According to our results, the valence of the rare earth metal ions is 3+, and we were able to conclude that 4f electronic shells could not be used for the calculation of the conducting band in this system. Furthermore, the analysis of the data on the magnetic susceptibility of the Er 3+ ion with cubic crystalline acting field, gave us the opportunity to estimate the overall splitting of their electronic states for the first time. The conducting polymers were studied using samples of poly(3-methylthiophene) doped with ClO 4 - , which show a phase transition in the range of 230 K to 130 K. The electron paramagnetic resonance also gives important information on the crystallization, doping level and the presence of polarons or bipolarons in conducting polymers. (author)

  1. Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

    Energy Technology Data Exchange (ETDEWEB)

    Daqiq, Reza; Ghobadi, Nader

    2016-07-15

    We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

  2. Magnetic and electronic properties of half-metallic ferromagnetic Mn-stabilised zirconia

    Energy Technology Data Exchange (ETDEWEB)

    Maznichenko, Igor; Daene, Markus; Hergert, Wolfram; Mertig, Ingrid [Martin-Luther-Univ. Halle-Wittenberg, Inst. Phys., 06099 Halle (Germany); Ernst, Arthur; Ostanin, Sergey; Sandratskii, Leonid; Bruno, Patrick [Max-Planck-Inst. Mikrostrukturphys., Weinberg 2, 06120 Halle (Germany); Bergqvist, Lars [Dept. Phys., Uppsala Univ., Box 530, 751 21 Uppsala (Sweden); Hughes, Ian; Staunton, Julie [Dept. Phys., Univ. Warwick, Coventry CV4 7AL (United Kingdom); Kudrnovsky, Josef [Max-Planck-Inst. Mikrostrukturphys., Weinberg 2, 06120 Halle (Germany); Inst. Phys., Acad. Sci. of the Czech Republic, Na Slovance 2, 18221 Prague (Czech Republic)

    2007-07-01

    The investigations of the manganese stabilised cubic zirconia (Mn-SZ) show that this dilute magnetic semiconductors possess unique magnetic properties. Based on ab-initio electronic structure calculations which include the effects of thermally excited magnetic fluctuations, the autors predict Mn-SZ to be ferromagnetic for a wide range of Mn concentration up to high T{sub C}. It was found that this material, which is well known both as a diamond imitation and as a catalyst, is halfmetallic with majority and minority spin states of the Mn impurities lying in the wide band gap of zirconia. The high T{sub C} ferromagnetism is robust against oxygen vacancies and against the distribution of Mn impurities on the Zr fcc sublattice. This work responds to the question concerning the key electronic and structure factors behind an optimal doping. The autors propose this stable half-metallic ferromagnet to be a promising candidate for future spintronics applications.

  3. Temperature dependence of the magnetic hyperfine field at an s–p impurity diluted in RNi{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, A.L. de, E-mail: alexandre.oliveira@ifrj.edu.br [Instituto Federal de Educação, Ciência e Tecnologia do Rio de Janeiro, Campus Nilópolis, RJ (Brazil); Chaves, C.M., E-mail: cmch@cbpf.br [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro, RJ (Brazil); Oliveira, N.A. de [Instituto de Física Armando Dias Tavares, Universidade do Estado do Rio de Janeiro, Rio de Janeiro (Brazil); Troper, A. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro, RJ (Brazil)

    2016-03-01

    We study the formation of local magnetic moments and magnetic hyperfine fields at an s–p impurity diluted in intermetallic Laves phase compounds RNi{sub 2} (R=Nd, Sm, Gd, Tb, Dy) at finite temperatures. We start with a clean host and later the impurity is introduced. The host has two-coupled (R and Ni) sublattice Hubbard Hamiltonians but the Ni sublattice can be disregarded because its d band, being full, is magnetically ineffective. Also, the effect of the 4f electrons of R is represented by the polarization they produce on the d band. This leaves us with a lattice of effective rare earth R-ions with polarized electrons. For the dd electronic interaction we use the Hubbard–Stratonovich identity in a functional integral approach in the static saddle point approximation. - Highlights: • Functional integral method in the static limit, producing site disorder, is used. • The site disorder is treated with the Coherent Potential Approximation (CPA). • Non magnetic Ni generates an effective lattice with only a polarized R d band. • The effective R lattice differ from the pure R metal: Results and Discussions. • The experimental curve of hyperfine fields × temperature are very well reproduced.

  4. Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Krivoruchko, V.N.

    1996-01-01

    The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

  5. Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

    KAUST Repository

    Sun, J.

    2013-02-13

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device\\'s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. 2013 by the authors.

  6. Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review

    Directory of Open Access Journals (Sweden)

    Jürgen Kosel

    2013-02-01

    Full Text Available The Extraordinary Magnetoresistance (EMR effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device’s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed.

  7. Doping of Ga in antiferromagnetic semiconductor α-Cr2O3 and its effects on magnetic and electronic properties

    Science.gov (United States)

    Bhowmik, R. N.; Venkata Siva, K.; Ranganathan, R.; Mazumdar, Chandan

    2017-06-01

    The samples of Ga-doped Cr2O3 have been prepared using chemical co-precipitation route. X-ray diffraction pattern and Raman spectra have indicated rhombohedral crystal structure with space group R 3 bar C. Magnetic measurements indicated diluted antiferromagnetic (AFM) spin order in Ga-doped α-Cr2O3 and ferrimagnetic ordering of spins at about 50-60 K is confirmed from the analysis of the temperature dependence of dc magnetization and ac susceptibility data. Apart from magnetic dilution effect, the samples have shown superparamagnetic behavior below 50 K due to frustrated surface spins of the nano-sized grains. The samples have shown non-linear electronic properties. The current-voltage (I-V) characteristics of the Ga-doped α-Cr2O3 samples are remarkably different from α-Cr2O3 sample. The bi-stable electronic states and negative differential resistance are some of the unique non-linear electronic properties that the I-V curves of Ga-doped samples have exhibited. Optical study revealed three electronic transitions in the samples associated with band gap energy at about 2.67-2.81 eV, 1.91-2.11 eV, 1.28-1.35 eV, respectively. The results indicated multi-level electronic structure in Ga-doped α-Cr2O3 system.

  8. Dilute Potts chain in a magnetic field

    International Nuclear Information System (INIS)

    Chaves, C.M.; Riera, R.

    1983-03-01

    The Potts lattice gas in presence of a uniform magnetic field is solved exactly in one dimension. For negative values of the exchange parameter, the magnetization curve exhibits two or three steps, depending on the concentration of vacancies. These steps arise as a result of the competition between the exchange interaction and the magnetic field, being associated to different structural distribution of vacancies and to the magnetic ordering of one or both sublattices. (Author) [pt

  9. 100% spin accumulation in non-half-metallic ferromagnet-semiconductor junctions

    International Nuclear Information System (INIS)

    Petukhov, A G; Niggemann, J; Smelyanskiy, V N; Osipov, V V

    2007-01-01

    We show that the spin polarization of electron density in non-magnetic degenerate semiconductors can achieve 100%. The effect of 100% spin accumulation does not require a half-metallic ferromagnetic contact and can be realized in ferromagnet-semiconductor FM-n + -n junctions even at moderate spin selectivity of the FM-n + contact when the electrons with spin 'up' are extracted from n semiconductor through the heavily doped n + layer into the ferromagnet and the electrons with spin 'down' are accumulated near the n + -n interface. We derived a general equation relating spin polarization of the current to that of the electron density in non-magnetic semiconductors. We found that the effect of complete spin polarization is achieved near the n + -n interface when the concentration of the spin 'up' electrons tends to zero in this region while the diffusion current of these electrons remains finite

  10. Magnetic refrigeration capabilities of magnetocaloric Ni2Mn:75Cu:25Ga

    Science.gov (United States)

    Mishra, S. K.; Jenkins, C. A.; Dubenko, I.; Samanta, T.; Ali, N.; Roy, S.

    2013-03-01

    Doping-driven competition between energetically similar ground states leads to many exciting materials phenomena such as the emergence of high-Tc superconductivity, diluted magnetic semiconductors, and colossal magnetoresistance. Doped Ni2MnGa Heusler alloy, which is a multifunctional ferromagnetic alloy with various exotic physical properties demonstrates this notion of rich phenomenology via modified ground spin states. Adopting this generic concept, here we will present a novel doped Ni2Mn.75Cu.25Ga alloy that offers unprecedented co-existence of the magnetocaloric effect and fully controlled ferromagnetism at room temperature. Application of site engineering enables us to manipulate the ground spin state that leads to the decrease in magnetic transition temperature and also increases the delocalization of the Mn magnetism. SQUID magnetometery suggests that Cu doping enhances the saturation magnetization, coercive field and clarity of magnetic hysteresis loops. By exploiting x-ray absorption techniques and measuring element specific magnetic hysteresis loops, here we will describe the microscopic origin of enhnaced magnetocaloric properties and d-d interaction driven charge transfer effects in Ni2Mn.75Cu.25Ga This work was supported by DOE Grant No. DE-FG02-06ER46291

  11. Optically Detected Magnetic Resonance Studies on π-conjugated semiconductor systems

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ying [Iowa State Univ., Ames, IA (United States)

    2011-01-01

    Optically Detected Magnetic Resonance (ODMR) techniques were used to investigate the dynamics of excitons and charge carriers in π-conjugated organic semiconductors. Degradation behavior of the negative spin-1/2 electroluminescence-detected magnetic resonance (ELDMR) was observed in Alq3 devices. The increase in the resonance amplitude implies an increasing bipolaron formation during degradation, which might be the result of growth of charge traps in the device. The same behavior of the negative spin-1/2 ELDMR was observed in 2wt% Rubrene doped Tris(8-hydroxyquinolinato)aluminium (Alq3) devices. However, with increasing injection current, a positive spin-1/2 ELDMR, together with positive spin 1 triplet powder patterns at ΔmS=±1 and ΔmS=±2, emerges. Due to the similarities in the frequency dependences of single and double modulated ELDMR and the photoluminescence-detected magnetic resonance (PLDMR) results in poly[2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenyl ene vinylene] (MEH-PPV) films, the mechanism for this positive spin-1/2 ELDMR was assigned to enhanced triplet-polaron quenching under resonance conditions. The ELDMR in rubrene doped Alq3 devices provides a path to investigate charge distribution in the device under operational conditions. Combining the results of several devices with different carrier blocking properties and the results from transient EL, it was concluded trions not only exist near buffer layer but also exist in the electron transport layer. This TPQ model can also be used to explain the positive spin-1/2 PLDMR in poly(3-hexylthiophene) (P3HT) films at low temperature and in MEH-PPV films at various temperatures up to room temperature. Through quantitative analysis, TE-polaron quenching (TPQ) model is shown having the ability to explain most behaviors of the positive spin-1/2 resonance. Photocurrent detected magnetic resonance (PCDMR) studies on MEH-PPV devices revealed a novel transient resonance signal. The signal

  12. Bulletin of Materials Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    GaN samples with different transition metal dopants have been synthesized and their usefulness as semi-magnetic materials, which are also identified as dilute magnetic semiconductors (DMS), have been evaluated. Better results have been obtained on the magnetic characteristics of GaN with ruthenium as the dopant.

  13. Homogeneous and heterogeneous photoredox-catalyzed hydroxymethylation of ketones and keto esters: catalyst screening, chemoselectivity and dilution effects

    Directory of Open Access Journals (Sweden)

    Axel G. Griesbeck

    2014-05-01

    Full Text Available The homogeneous titanium- and dye-catalyzed as well as the heterogeneous semiconductor particle-catalyzed photohydroxymethylation of ketones by methanol were investigated in order to evaluate the most active photocatalyst system. Dialkoxytitanium dichlorides are the most efficient species for chemoselective hydroxymethylation of acetophenone as well as other aromatic and aliphatic ketones. Pinacol coupling is the dominant process for semiconductor catalysis and ketone reduction dominates the Ti(OiPr4/methanol or isopropanol systems. Application of dilution effects on the TiO2 catalysis leads to an increase in hydroxymethylation at the expense of the pinacol coupling.

  14. Electrical control of 2D magnetism in bilayer CrI 3.

    Science.gov (United States)

    Huang, Bevin; Clark, Genevieve; Klein, Dahlia R; MacNeill, David; Navarro-Moratalla, Efrén; Seyler, Kyle L; Wilson, Nathan; McGuire, Michael A; Cobden, David H; Xiao, Di; Yao, Wang; Jarillo-Herrero, Pablo; Xu, Xiaodong

    2018-04-23

    Controlling magnetism via electric fields addresses fundamental questions of magnetic phenomena and phase transitions 1-3 , and enables the development of electrically coupled spintronic devices, such as voltage-controlled magnetic memories with low operation energy 4-6 . Previous studies on dilute magnetic semiconductors such as (Ga,Mn)As and (In,Mn)Sb have demonstrated large modulations of the Curie temperatures and coercive fields by altering the magnetic anisotropy and exchange interaction 2,4,7-9 . Owing to their unique magnetic properties 10-14 , the recently reported two-dimensional magnets provide a new system for studying these features 15-19 . For instance, a bilayer of chromium triiodide (CrI 3 ) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition 15,16 . Here, we demonstrate electrostatic gate control of magnetism in CrI 3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states that exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. Our results allow for the exploration of new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.

  15. The role of iron(II) dilution in the magnetic and photomagnetic properties of the series [Fe(x)Zn(1-x)(bpp)₂](NCSe)₂.

    Science.gov (United States)

    Baldé, Chérif; Desplanches, Cédric; Le Gac, Fréderic; Guionneau, Philippe; Létard, Jean-François

    2014-06-07

    The effects of metal dilution on the spin-crossover behavior of iron(II) in the mixed crystal series [Fe(x)Zn(1-x)(bpp)2](NCSe)2 (bpp = 2,6-bis(pyrazol-3-yl)pyridine) have been studied using magnetic susceptibility, photomagnetism and diffuse reflectivity measurements. For each mixed-crystal system, the thermal spin transition temperature, T(1/2), and the relaxation temperature of the photo-induced high-spin state, T(LIESST), have been systematically determined. It appears that T(1/2) decreases with the metal dilution while T(LIESST) remains unchanged. Dilution also tends to decrease the hysteresis width and smooth the transition curves. These effects were discussed first qualitatively and then quantitatively on the basis of a kinetic study governing the photo-induced back conversion taking into account the relative sizes of Zn(II) and Fe(II) ions. Interestingly, single crystals were obtained for [Fe(0.6)Zn(0.4)(bpp)2](NCSe)2 allowing the X-ray diffraction crystal-structure determination.

  16. Simultaneous monitoring of singlet and triplet exciton variations in solid organic semiconductors driven by an external static magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Baofu, E-mail: b.ding@ecu.edu.au; Alameh, Kamal, E-mail: k.alameh@ecu.edu.au [Electron Science Research Institute, Edith Cowan University, 270 Joondalup Drive, Joondalup, WA 6027 (Australia)

    2014-07-07

    The research field of organic spintronics has remarkably and rapidly become a promising research area for delivering a range of high-performance devices, such as magnetic-field sensors, spin valves, and magnetically modulated organic light emitting devices (OLEDs). Plenty of microscopic physical and chemical models based on exciton or charge interactions have been proposed to explain organic magneto-optoelectronic phenomena. However, the simultaneous observation of singlet- and triplet-exciton variations in an external magnetic field is still unfeasible, preventing a thorough theoretical description of the spin dynamics in organic semiconductors. Here, we show that we can simultaneously observe variations of singlet excitons and triplet excitons in an external magnetic field, by designing an OLED structure employing a singlet-exciton filtering and detection layer in conjunction with a separate triplet-exciton detection layer. This OLED structure enables the observation of a Lorentzian and a non-Lorentzian line-shape magnetoresponse for singlet excitons and triplet excitons, respectively.

  17. Simultaneous monitoring of singlet and triplet exciton variations in solid organic semiconductors driven by an external static magnetic field

    International Nuclear Information System (INIS)

    Ding, Baofu; Alameh, Kamal

    2014-01-01

    The research field of organic spintronics has remarkably and rapidly become a promising research area for delivering a range of high-performance devices, such as magnetic-field sensors, spin valves, and magnetically modulated organic light emitting devices (OLEDs). Plenty of microscopic physical and chemical models based on exciton or charge interactions have been proposed to explain organic magneto-optoelectronic phenomena. However, the simultaneous observation of singlet- and triplet-exciton variations in an external magnetic field is still unfeasible, preventing a thorough theoretical description of the spin dynamics in organic semiconductors. Here, we show that we can simultaneously observe variations of singlet excitons and triplet excitons in an external magnetic field, by designing an OLED structure employing a singlet-exciton filtering and detection layer in conjunction with a separate triplet-exciton detection layer. This OLED structure enables the observation of a Lorentzian and a non-Lorentzian line-shape magnetoresponse for singlet excitons and triplet excitons, respectively.

  18. A Cold Cycle Dilution Refrigerator for Space Applications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The cold cycle dilution refrigerator is a continuous refrigerator capable of cooling to temperatures below 100 mK that makes use of a novel thermal magnetic pump....

  19. Beam Halo on the LHC TCDQ Diluter System and Thermal Load on the Downstream Superconducting Magnets

    CERN Document Server

    Goddard, B; Presland, A; Redaelli, S; Robert-Démolaize, G; Sarchiapone, L; Weiler, T; Weterings, W

    2006-01-01

    The moveable single-jawed graphite TCDQ diluter must be positioned very close to the circulating LHC beam in order to prevent damage to downstream components in the event of an unsynchronised beam abort. A two-jawed graphite TCS.IR6 collimator forms part of the TCDQ system. The requirement to place the jaws close to the beam means that the system can intercept a substantial beam halo load. Initial investigations indicated a worryingly high heat load on the Q4 coils. This paper presents the updated load cases, shielding and simulation geometry, and the results of simulations of the energy deposition in the TCDQ system and in the downstream superconducting Q4 magnet. The implications for the operation of the LHC are discussed.

  20. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  1. Mn concentration and quantum size effects on spin-polarized transport through CdMnTe based magnetic resonant tunneling diode.

    Science.gov (United States)

    Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M

    2012-11-01

    Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.

  2. Intraband absorption in GaAs-(Ga,Al)As variably spaced semiconductor superlattices under crossed electric and magnetic fields

    Science.gov (United States)

    Reyes-Gómez, E.; Raigoza, N.; Oliveira, L. E.

    2013-11-01

    A theoretical study of the intraband absorption properties of GaAs-Ga1-xAlxAs variably spaced semiconductor superlattices under crossed magnetic and electric fields is presented. Calculations are performed for the applied electric field along the growth-axis direction, whereas the magnetic field is considered parallel to the heterostructure layers. By defining a critical electric field so that the heterostructure energy levels are aligned in the absence of the applied magnetic fields, one finds that, in the weak magnetic-field regime, an abrupt red shift of the absorption coefficient maxima is obtained at fields equal to or larger than the critical electric field, a fact which may be explained from the localization properties of the electron wave functions. Results in the strong magnetic-field regime reveal a rich structure on the intraband absorption coefficient which may be explained from the strong dispersion exhibited by both the energy levels and transition strengths as functions of the generalized orbit-center position. Moreover, the possibility of occurrence of absorption in a wide frequency range is also demonstrated. Present calculated results may be of interest for future design and improvement of multilayered-based photovoltaic and solar-cell devices.

  3. Influence of temperature on spin polarization dynamics in dilute nitride semiconductors—Role of nonparamagnetic centers

    Energy Technology Data Exchange (ETDEWEB)

    Baranowski, M.; Misiewicz, J. [Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2015-10-21

    We report theoretical studies of spin polarization dynamics in dilute nitride semiconductors. We develop a commonly used rate equation model [Lagarde et al., Phys. Status Solidi A 204, 208 (2007) and Kunold et al. Phys. Rev. B 83, 165202 (2011)] to take into account the influence of shallow localizing states on the temperature dependence of spin polarization dynamics and a spin filtering effect. Presented investigations show that the experimentally observed temperature dependence of a spin polarization lifetime in dilute nitrides can be related to the electron capture process by shallow localizing states without paramagnetic properties. This process reduces the efficiency of spin filtering effect by deep paramagnetic centers, especially at low temperatures.

  4. Magneto-optical spectroscopy of diluted magnetic oxides TiO{sub 2-{delta}}: Co

    Energy Technology Data Exchange (ETDEWEB)

    Gan' shina, E.A. [Faculty of Physics, Moscow State M.V. Lomonosov University, Moscow 119991 (Russian Federation)], E-mail: Eagan@magn.ru; Granovsky, A.B. [Faculty of Physics, Moscow State M.V. Lomonosov University, Moscow 119991 (Russian Federation); Orlov, A.F. [State Research Institute for the Rare-Metal Industry, Moscow 119017 (Russian Federation); Perov, N.S.; Vashuk, M.V. [Faculty of Physics, Moscow State M.V. Lomonosov University, Moscow 119991 (Russian Federation)

    2009-04-15

    We report an experimental study on transversal Kerr effect (TKE) in magnetic oxide semiconductors TiO{sub 2-{delta}}:Co. The TiO{sub 2-{delta}}: Co thin films were deposited on LaAlO{sub 3} (0 0 1) substrates by magnetron sputtering in the argon-oxygen atmosphere at oxygen partial pressure of 2x10{sup -6}-2x10{sup -4} Torr. It was obtained that TKE spectra in ferromagnetic samples are extremely sensitive to the Co-volume fraction, the crystalline structure, and technology parameters. The observed well-pronounced peaks in TKE spectra for anatase Co-doped TiO{sub 2-{delta}} films at low Co (<1%) volume fraction are not representative for bulk Co or Co clusters in TiO{sub 2-{delta}} matrix that indicates on intrinsic ferromagnetism in these samples. With increase of Co-volume fraction up to 5-8% the fine structure of TKE spectra disappears and magneto-optical response in reflection mode becomes larger than that for thick Co films.

  5. Small polaron hopping in magnetic semiconductors

    International Nuclear Information System (INIS)

    Emin, D.; Liu, N.L.H.

    1978-01-01

    In a number of magnetic insulators it has been hypothesized that the charge carriers form small polarons. The transfer of an electron between magnetic sites and how the magnetic nature of the material affects the rate which characterizes small-polaron hops between magnetic sites were studied. The basic transfer processes are addressed from a many-electron point in which the itinerant electron is treated as indistinguishable from those which contribute unpaired spins at the magnetic sites

  6. Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

    Science.gov (United States)

    Korenev, V. L.; Akimov, I. A.; Zaitsev, S. V.; Sapega, V. F.; Langer, L.; Yakovlev, D. R.; Danilov, Yu. A.; Bayer, M.

    2012-07-01

    Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

  7. 32nd International Conference on the Physics of Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Chelikowsky, James [Univ. of Texas, Austin, TX (United States)

    2016-10-17

    The International Conference on the Physics of Semiconductors (ICPS) continues a series of biennial conferences that began in the 1950's. ICPS is the premier meeting for reporting all aspects of semiconductor physics including electronic, structural, optical, magnetic and transport properties with an emphasis on new materials and their applications. The meeting will reflect the state of art in the semiconductor physics field and will serve as a forum where scholars, researchers, and specialists can interact to discuss future research directions and technological advancements. The conference typically draws 1,000 international physicists, scientists, and students. This is one of the largest science meetings on semiconductors and related materials to be held in the United States.

  8. The Physics of Semiconductors An Introduction Including Devices and Nanophysics

    CERN Document Server

    Grundmann, Marius

    2006-01-01

    The Physics of Semiconductors provides material for a comprehensive upper-level-undergrauate and graduate course on the subject, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. For the interested reader some additional advanced topics are included, such as Bragg mirrors, resonators, polarized and magnetic semiconductors are included. Also supplied are explicit formulas for many results, to support better understanding. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from ...

  9. State of atoms and interatomic interactions in complex perovskite-like oxides. Communication XVIII. Magnetic dilution in the LaCrO3-LaGaO3 system

    International Nuclear Information System (INIS)

    Chezhina, N.V.; Zolotukhina, N.V.; Bodritskaya, Eh.V.

    2005-01-01

    Solid solutions LaCr x Ga 1-x O 3 (0.01 ≤ x ≤ 0.10) were synthesized using the ceramic technique and characterized by X-ray powder diffraction and chemical analysis. Magnetic susceptibility of dilute solid solutions of lanthanum chromate in lanthanum gallate was studied in the temperature range 77-400 K. The calculated antiferromagnetic exchange parameter and distribution of chromium atoms over the diamagnetic matrix gave evidence for enhanced chromium aggregation and weakened magnetic exchange in lanthanum gallate compared to lanthanum aluminate [ru

  10. Dilute antiferromagnetism in magnetically doped phosphorene

    Directory of Open Access Journals (Sweden)

    Andrew Allerdt

    2017-11-01

    Full Text Available We study the competition between Kondo physics and indirect exchange on monolayer black phos-phorous using a realistic description of the band structure in combination with the density matrixrenormalization group (DMRG method. The Hamiltonian is reduced to a one-dimensional problemvia an exact canonical transformation that makes it amenable to DMRG calculations, yielding exactresults that fully incorporate the many-body physics. We find that a perturbative description of theproblem is not appropriate and cannot account for the slow decay of the correlations and the completelack of ferromagnetism. In addition, at some particular distances, the impurities decouple formingtheir own independent Kondo states. This can be predicted from the nodes of the Lindhard function.Our results indicate a possible route toward realizing dilute anti-ferromagnetism in phosphorene. Received: 19 September 2017, Accepted: 12 October 2017; Edited by: K. Hallberg; DOI: http://dx.doi.org/10.4279/PIP.090008 Cite as: A Allerdt, A E Feiguin, Papers in Physics 9, 090008 (2017

  11. Crystallographic and magnetic properties of (C6D11ND3)CuBr3 and (Zn1-xMnx)3As2

    International Nuclear Information System (INIS)

    Vries, G.C. de.

    1989-08-01

    The investigations described concern the crystallographic and magnetic properties of the quasi one-dimensional (1d) ferromagnetic system (C 6 D 11 ND 3 )CuBr 3 (or CHAB) and the II-V type diluted magnetic semiconductor (Zn 1 - x Mn x ) 3 As 2 (or ZMA). Both compounds have been studied with various neutron scattering techniques. The crystallographic properties of CHAB and ZMA have been investigated by neutron diffraction. These diffraction experiments were carried out at the High Flux Reactor (HFR) at Petten, Netherlands. For the investigation of the static and dynamic magnetic properties of CHAB neutron scattering experiments were performed in Petten as well as other European reactor institutes. These investigations comprise a study of the 3d long-rate order and the 1d correlations of the magnetic moments, and a study of the behaviour of the linear spin-wave excitations

  12. Calculating the Curie temperature reliably in diluted III-V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Bouzerar, G.; Ziman, T.; Kudrnovský, Josef

    2005-01-01

    Roč. 69, č. 5 (2005), s. 812-818 ISSN 0295-5075 R&D Projects: GA AV ČR(CZ) IAA1010203; GA ČR(CZ) GA202/04/0583 Institutional research plan: CEZ:AV0Z10100520 Keywords : local RPA * Curie temperaure * ab-initio * Heisenberg model * magnetic percolation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.237, year: 2005

  13. Fe concentration dependence of tunneling magnetoresistance in magnetic tunnel junctions using group-IV ferromagnetic semiconductor GeFe

    Directory of Open Access Journals (Sweden)

    Kosuke Takiguchi

    2017-10-01

    Full Text Available Group-IV-based ferromagnetic semiconductor Ge1−xFex (GeFe is one of the most promising materials for spin injection/detection in Si and Ge. In this paper, we demonstrate a systematic study of tunneling magnetoresistance (TMR in magnetic tunnel junctions (MTJs composed of Fe/MgO/Ge1−xFex with various Fe concentrations (x = 0.065, 0.105, 0.140, and 0.175. With increasing x, the TMR ratio increases up to 1.5% when x≤ 0.105, and it decreases when x> 0.105. This is the first observation of the TMR ratio over 1% in MTJs containing a group-IV ferromagnetic semiconductor. With increasing x, while the Curie temperature of GeFe increases, the MgO surface becomes rougher, which is thought to be the cause of the upper limit of the TMR ratio. The quality of the MgO layer on GeFe is an important factor for further improvement of TMR in Fe/MgO/GeFe MTJs.

  14. Oxidized Mn:Ge magnetic semiconductor: Observation of anomalous Hall effect and large magnetoresistance

    Science.gov (United States)

    Duc Dung, Dang; Choi, Jiyoun; Feng, Wuwei; Cao Khang, Nguyen; Cho, Sunglae

    2018-03-01

    We report on the structural and magneto-transport properties of the as-grown and oxidized Mn:Ge magnetic semiconductors. Based on X-ray diffraction and X-ray photoelectron spectroscopy results, the samples annealed at 650 and 700 °C became fully oxidized and the chemical binding energies of Mn was found to be Mn3O4. Thus, the system became Mn3O4 clusters embedded in Ge1-yOy. The as-grown sample showed positive linear Hall effect and negligible negative magnetoresistance (MR), which trend remained for the sample annealed up to 550 °C. Interestingly, for the samples annealed at above 650 °C, we observed the anomalous Hall effect around 45 K and the giant positive MR, which are respectively 59.2% and 78.5% at 7 kOe annealed at 650 °C and 700 °C.

  15. Spin-filter and spin-gapless semiconductors: The case of Heusler compounds

    International Nuclear Information System (INIS)

    Galanakis, I.; Özdoğan, K.; Şaşıoğlu, E.

    2016-01-01

    We review our recent first-principles results on the inverse Heusler compounds and the ordered quaternary (also known as LiMgPdSn-type) Heusler compounds. Among these two subfamilies of the full-Heusler compounds, several have been shown to be magnetic semiconductors. Such material can find versatile applications, e.g. as spin-filter materials in magnetic tunnel junctions. Finally, a special case are the spin-gapless semiconductors, where the energy gap at the Fermi level for the one spin-direction is almost vanishing, offering novel functionalities in spintronic/magnetoelectronic devices.

  16. Elastic constants of nanoporous III-V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Janovská, Michaela; Sedlák, Petr; Kruisová, Alena; Seiner, Hanuš; Landa, Michal; Grym, Jan

    2015-01-01

    Roč. 48, č. 24 (2015) ISSN 0022-3727 R&D Projects: GA ČR GB14-36566G Institutional support: RVO:61388998 ; RVO:67985882 Keywords : nanoporous semiconductors * resonant ultrasound spectroscopy * finite elements modelling Subject RIV: BM - Solid Matter Physics ; Magnetism; BM - Solid Matter Physics ; Magnetism (URE-Y) Impact factor: 2.772, year: 2015 http://iopscience.iop.org/0022-3727/48/24/245102/article

  17. Defect-mediated magnetism of transition metal doped zinc oxide thin films

    Science.gov (United States)

    Roberts, Bradley Kirk

    Magnetism in transition metal doped wide band-gap materials is of interest to further the fundamental science of materials and future spintronics applications. Large inter-dopant separations require mediation of ferromagnetism by some method; carrier-mediated mechanisms are typically applicable to dilute magnetic semiconductors with low Curie temperatures. Dilute magnetic oxides, commonly with poor conductivity and TC above room temperature, cannot be described within this theory. Recent experiment and theory developments suggest that ferromagnetic exchange in these materials can be mediated by defects. This research includes experimental results justifying and developing this approach. Thin films of Cr doped ZnO (band gap ˜3.3 eV) were deposited with several processing variations to enhance the effects of either 0-dimensional (vacancy, hydrogen-related defect) or two-dimensional defects (surface/interface) and thereby affect magnetism and conductivity. We observe surface magnetism in dielectric thin films of oxygen-saturated ZnO:Cr with spontaneous magnetic moment and conductance dropping approximately exponentially with increasing thickness. Uniform defect concentrations would not result in such magnetic ordering behavior indicating that magnetism is mediated either by surface defects or differing concentrations of point defects near the surface. Polarized neutron reflectivity profiling confirms a magnetically active region of ˜8 nm at the film surface. Hydrogen is notoriously present as a defect and carrier dopant in ZnO, and artificial introduction of hydrogen in dielectric ZnO:Cr films results in varying electronic and magnetic behavior. Free carriers introduced with hydrogen doping are not spin-polarized requiring an alternative explanation for ferromagnetism. We find from positron annihilation spectroscopy measurements that hydrogen doping increases the concentration of an altered VZn-related defect (a preliminary interpretation) throughout the film, which

  18. Micropores preparation in A3B5 semiconductors

    Czech Academy of Sciences Publication Activity Database

    Nohavica, Dušan; Gladkov, Petar; Zelinka, Jiří; Jarchovský, Zdeněk

    -, mim. číslo (2007), s. 1-16 ISSN 1335-9053. [Development of Materials Science in Research and Education . Tatranská Štrba, 10.09.2007-14.09.2007] R&D Projects: GA ČR GA202/06/1315; GA MŠk ME 834 Institutional research plan: CEZ:AV0Z20670512 Keywords : porous semiconductors * III-V semiconductors * nanoelectronics Subject RIV: BM - Solid Matter Physics ; Magnetism http://www.mtf.stuba.sk/docs//internetovy_casopis/2007/mimorcis/nohavica.pdf

  19. Field-dependent dynamic responses from dilute magnetic nanoparticle dispersions

    DEFF Research Database (Denmark)

    Fock, Jeppe; Balceris, Christoph; Costo, Rocio

    2018-01-01

    The response of magnetic nanoparticles (MNPs) to an oscillating magnetic field outside the linear response region is important for several applications including magnetic hyperthermia, magnetic resonance imaging and biodetection. The size and magnetic moment are two critical parameters for the pe...

  20. Dynamics of spins in semiconductor quantum wells under drift

    International Nuclear Information System (INIS)

    Idrish Miah, M.

    2009-01-01

    The dynamics of spins in semiconductor quantum wells under applied electric bias has been investigated by photoluminescence (PL) spectroscopy. The bias-dependent polarization of PL (P PL ) was measured at different temperatures. The P PL was found to decay with an enhancement of increasing the strength of the negative bias, with an exception occurred for a low value of the negative bias. The P PL was also found to depend on the temperature. The P PL in the presence of a transverse magnetic field was also studied. The results showed that P PL in the magnetic field oscillates under an applied bias, demonstrating that the dephasing of electron spin occurs during the drift transport in semiconductor quantum wells.

  1. Effects of ion sputtering on semiconductor surfaces

    International Nuclear Information System (INIS)

    McGuire, G.E.

    1978-01-01

    Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

  2. Inelastic light scattering by low-lying excitations of electrons in low-dimensional semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Pellegrini, V. [NEST CNR-INFM and Scuola Normale Superiore, Pisa (Italy); Pinczuk, A. [Department of Physics, Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States); Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey (United States)

    2006-11-15

    The low-dimensional electron systems that reside in artificial semiconductor heterostructures of great perfection are a contemporary materials base for explorations of collective phenomena. Studies of low-lying elementary excitations by inelastic light scattering offer insights on properties such energetics, interactions and spin magnetization. We review here recent light scattering results obtained from two-dimensional (2D) quantum fluids in semiconductor heterostructures under extreme conditions of low temperature and large magnetic field, where the quantum Hall phases are archetypes of novel behaviors. We also consider recent light scattering experiments that have probed the excitation spectra of few-electron states in semiconductor quantum dots. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Wang, C., E-mail: cwang@mail.sim.ac.cn; Wang, F.; Cao, J. C., E-mail: jccao@mail.sim.ac.cn [Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

  4. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

    International Nuclear Information System (INIS)

    Wang, C.; Wang, F.; Cao, J. C.

    2014-01-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation

  5. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field.

    Science.gov (United States)

    Wang, C; Wang, F; Cao, J C

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

  6. Comparison of the mid-infrared magneto-otical response of GaMnAs films grown by molecular beam epitaxy and ion implantation and pulsed laser melting

    Czech Academy of Sciences Publication Activity Database

    Acbas, G.; Sinova, J.; Scarpulla, M.A.; Dubon, O.D.; Cukr, Miroslav; Novák, Vít; Cerne, J.

    2007-01-01

    Roč. 20, - (2007), s. 457-460 ISSN 1557-1939 R&D Projects: GA ČR GA202/04/1519 Institutional research plan: CEZ:AV0Z10100521 Keywords : epitaxy * diluted magnetic semiconductors * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.425, year: 2007

  7. Gadolinium-doped Ⅲ-nitride diluted magnetic semiconductors for spintronics applications

    Directory of Open Access Journals (Sweden)

    ZHOU Yikai

    2015-08-01

    Full Text Available The accelerating expansion was discovered at the end of the last century, which violates humans′ fundamental intuition of gravity. Trying to explaining this weird observational fact became the principal task of cosmologists, who proposed various models. Among these models, gauge theories of gravity , for its solid theoretical foundation, attract widespread attention. In this paper, we study the cosmology based on the Poincaré gauge theory of gravity. We obtain the analytical solution which describes the evolution history of the universe. And we fit these analytical results to the Type Ia Supernova observation data, and obtain the best-fit value for model parameters and initial conditions, and the confidence level of these parameters.

  8. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  9. First principles prediction of the magnetic properties of Fe-X6 (X = S, C, N, O, F) doped monolayer MoS2

    KAUST Repository

    Feng, Nan; Mi, Wenbo; Cheng, Yingchun; Guo, Zaibing; Schwingenschlö gl, Udo; Bai, Haili

    2014-01-01

    Using first-principles calculations, we have investigated the electronic structure and magnetic properties of Fe-X 6 clusters (X = S, C, N, O, and F) incorporated in 4 4 monolayer MoS 2, where a Mo atom is substituted by Fe and its nearest S atoms are substituted by C, N, O, and F. Single Fe and Fe-F 6 substituions make the system display half-metallic properties, Fe-C 6 and Fe-N 6 substitutions lead to a spin gapless semiconducting behavior, and Fe-O 6 doped monolayer MoS 2 is semiconducting. Magnetic moments of 1.93, 1.45, 3.18, 2.08, and 2.21...? B are obtained for X = S, C, N, O, and F, respectively. The different electronic and magnetic characters originate from hybridization between the X and Fe/Mo atoms. Our results suggest that cluster doping can be an efficient strategy for exploring two-dimensional diluted magnetic semiconductors.

  10. First principles prediction of the magnetic properties of Fe-X6 (X = S, C, N, O, F) doped monolayer MoS2

    KAUST Repository

    Feng, Nan

    2014-02-05

    Using first-principles calculations, we have investigated the electronic structure and magnetic properties of Fe-X 6 clusters (X = S, C, N, O, and F) incorporated in 4 4 monolayer MoS 2, where a Mo atom is substituted by Fe and its nearest S atoms are substituted by C, N, O, and F. Single Fe and Fe-F 6 substituions make the system display half-metallic properties, Fe-C 6 and Fe-N 6 substitutions lead to a spin gapless semiconducting behavior, and Fe-O 6 doped monolayer MoS 2 is semiconducting. Magnetic moments of 1.93, 1.45, 3.18, 2.08, and 2.21...? B are obtained for X = S, C, N, O, and F, respectively. The different electronic and magnetic characters originate from hybridization between the X and Fe/Mo atoms. Our results suggest that cluster doping can be an efficient strategy for exploring two-dimensional diluted magnetic semiconductors.

  11. The physics of semiconductors an introduction including nanophysics and applications

    CERN Document Server

    Grundmann, Marius

    2016-01-01

    The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better under...

  12. Doping dependent room-temperature ferromagnetism and structural properties of dilute magnetic semiconductor ZnO:Cu2+ nanorods

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.

    2009-01-01

    Copper doped ZnO nanoparticles were synthesized by the chemical technique based on the hydrothermal method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) for different doping percentages of Cu 2+ (1-10%). TEM/SEM images showed formation of uniform nanorods, the aspect ratio of which varied with doping percentage of Cu 2+ . The wurtzite structure of ZnO gradually degrades with the increasing Cu 2+ doping concentration and an additional CuO associated diffraction peak was observed above 8% of Cu 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Cu 2+ doping concentrations was investigated using a vibrating sample magnetometer (VSM). Initially these nanoparticles showed strong room-temperature ferromagnetic behavior, however at higher doping percentage of copper the ferromagnetic behavior was suppressed and paramagnetic nature was enhanced.

  13. Optically induced Hall effect in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Idrish Miah, M; Gray, E Mac A, E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

    2009-03-01

    We describe an experiment which investigates the effect of a longitudinal electric field on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a Hall voltage resulting from nonequilibrium magnetization induced by the spin-carrier electrons accumulating at the transverse boundaries of the sample as a result of asymmetries in scattering for spin-up and spin-down electrons in the presence of spin-orbit interaction. It is found that the effect depends on the longitudinal electric field and doping density as well as on temperature. The results are presented by discussing the dominant spin relaxation mechanisms in semiconductors.

  14. Magnetic separation from superparamagnetic particle suspensions

    International Nuclear Information System (INIS)

    Sinha, Ashok; Ganguly, Ranjan; Puri, Ishwar K.

    2009-01-01

    We investigate the magnetophoretic separation of magnetic microparticles from a non-dilute flow in a microfluidic channel and their subsequent field-induced aggregation under the influence of an externally applied magnetic force. This force induces dipolar interactions between the particles that aid in their separation from the flow. Existing analytical models for dilute suspensions cannot be extended to non-dilute suspensions in which interparticle magnetic interactions play an important role. We therefore conduct a parametric investigation of the mechanics of this problem in a microcapillary flow through simulations and experimental visualization. When a magnetic field is applied, the magnetic microparticles form an aggregate on the channel wall that is influenced by the competition between the holding magnetic force and the aggregate-depleting flow shear force. Microparticle collection in the aggregate increases linearly with increasing magnetic field strength and is characterized by distinct buildup and washaway phases. The collected microparticle volume fraction in an aggregate is found to depend on a single dimensional group that depends upon characteristic system parameters.

  15. Coherence and stiffness of spin waves in diluted ferromagnets

    Czech Academy of Sciences Publication Activity Database

    Turek, Ilja; Kudrnovský, Josef; Drchal, Václav

    2016-01-01

    Roč. 94, č. 17 (2016), č. článku 174447. ISSN 2469-9950 R&D Projects: GA ČR GA15-13436S Institutional support: RVO:68081723 ; RVO:68378271 Keywords : spin wave s * diluted ferromagnets * disordered systems Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

  16. Dynamics of spins in semiconductor quantum wells under drift

    Energy Technology Data Exchange (ETDEWEB)

    Idrish Miah, M., E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

    2009-09-15

    The dynamics of spins in semiconductor quantum wells under applied electric bias has been investigated by photoluminescence (PL) spectroscopy. The bias-dependent polarization of PL (P{sub PL}) was measured at different temperatures. The P{sub PL} was found to decay with an enhancement of increasing the strength of the negative bias, with an exception occurred for a low value of the negative bias. The P{sub PL} was also found to depend on the temperature. The P{sub PL} in the presence of a transverse magnetic field was also studied. The results showed that P{sub PL} in the magnetic field oscillates under an applied bias, demonstrating that the dephasing of electron spin occurs during the drift transport in semiconductor quantum wells.

  17. Energy relaxation and heating of magnons in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Korenblit, I.Ya.; Tankhilevich, B.G.

    1976-01-01

    The warming-up of electrons and magnons by a high electrical field in ferromagnetic semiconductors with wide conduction bands has been considered. The warming-up of magnons determines the dependence of the magnetic characteristics of the semiconductor (for example, its magnetization) on the electric field and leads to some interesting peculiarities in the current-voltage characteristic (CVC). In some cases, owing to a rapid decrease of electrical conductivity with the increasing temperature of magnons, the CVC may contain a descending part. Since the energy relaxation of magnons occurs very slowly, the time during which the stationary state sets in, although varying widely as a function of the lattice temperature T and the electron gas concentration n, may reach values of the order of milliseconds

  18. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    Science.gov (United States)

    Calvez, S.; Adams, M. J.

    2012-09-01

    achievements in the June 1987 Special Issue of IEEE Journal of Quantum Electronics. The Millennium Issue of IEEE Journal of Selected Topics in Quantum Electronics presented a further set of articles on historical aspects of the subject as well as a 'snapshot' of current research in June 2000. It is not the intention here to duplicate any of this historical material that is already available, but rather to complement it with personal recollections from researchers who were involved in laser development in the USA, France, Russia and the UK. Hence, in addition to fascinating accounts of the discovery of the theoretical condition for stimulated emission from semiconductors and of the pioneering work at IBM, there are two complementary views of the laser research at the Lebedev Institute, and personal insights into the developments at STL and at Bell Laboratories. These are followed by an account of the scientific and technological connections between the early pioneering breakthroughs and the commercialisation of semiconductor laser products. Turning to the papers from today's researchers, there is coverage of many of the current 'hot' topics including quantum cascade lasers, mid-infrared lasers, high-power lasers, the exciting developments in understanding and exploiting the nonlinear dynamics of lasers, and photonic integrated circuits with extremely high communication data capacity, as well as reports of recent progress on laser materials such as dilute nitrides and bismides, photonic crystals, quantum dots and organic semiconductors. Thanks are due to Jarlath McKenna for sterling support from IOP Publishing and to Peter Blood for instigating this Special Issue and inviting us to serve as Guest Editors.

  19. Influence of energy bands on the Hall effect in degenerate semiconductors

    International Nuclear Information System (INIS)

    Wu, Chhi-Chong; Tsai, Jensan

    1989-01-01

    The influence of energy bands on the Hall effect and transverse magnetoresistance has been investigated according to the scattering processes of carriers in degenerate semiconductors such as InSb. Results show that the Hall angle, Hall coefficient, and transverse magnetoresistance depend on the dc magnetic field for both parabolic and nonparabolic band structures of semiconductors and also depend on the scattering processes of carriers in semiconductors due to the energy-dependent relaxation time. From their numerical analysis for the Hall effect, it is shown that the conduction electrons in degenerate semiconductors play a major role for the carrier transport phenomenon. By comparing with experimental data of the transverse magnetoresistance, it shows that the nonparabolic band model is better in agreement with the experimental work than the parabolic band model of semiconductors

  20. Magnetism in V-/Mn-doped ZnO layers fabricated on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A.C.; El-Shaer, A.; Schlenker, E.; Bakin, A.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Reuss, F.; Kling, R.; Schoch, W.; Limmer, W. [University Ulm, Department of Semiconductor Physics, Ulm (Germany); Ahlers, H.; Siegner, U.; Sievers, S.; Albrecht, M. [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Eisenmenger, J.; Mueller, T.; Ziemann, P. [University Ulm, Department of Solid State Physics, Ulm (Germany); Huebel, A.; Denninger, G. [Universitaet Stuttgart, 2. Physkalisches Institut, Stuttgart (Germany)

    2007-07-15

    Doping ZnO with transition metals (TM) is an obvious approach to produce diluted magnetic semiconductors for magnetoelectronic and spintronic applications. We have carried out experimental studies on the fabrication and characterisation of Mn-doped ZnO layers and V-doped ZnO layers and nanorods, the results of which are reviewed in this paper. From SQUID measurements, both epitaxial and implanted ZnMnO layers show paramagnetic behaviour. Epitaxial ZnVO layers show ferromagnetic SQUID signals, but the presence of any secondary phases in the ZnVO layers may not be ruled out. We also show that the used Al{sub 2}O{sub 3} substrates produce a ferromagnetic SQUID signal, that complicates the analysis of magnetisation data and hence the confirmation of ferromagnetism only from SQUID results. (orig.)

  1. Phase diagrams of diluted transverse Ising nanowire

    International Nuclear Information System (INIS)

    Bouhou, S.; Essaoudi, I.; Ainane, A.; Saber, M.; Ahuja, R.; Dujardin, F.

    2013-01-01

    In this paper, the phase diagrams of diluted Ising nanowire consisting of core and surface shell coupling by J cs exchange interaction are studied using the effective field theory with a probability distribution technique, in the presence of transverse fields in the core and in the surface shell. We find a number of characteristic phenomena. In particular, the effect of concentration c of magnetic atoms, the exchange interaction core/shell, the exchange in surface and the transverse fields in core and in surface shell of phase diagrams are investigated. - Highlights: ► We use the EFT to investigate the phase diagrams of Ising transverse nanowire. ► Ferrimagnetic and ferromagnetic cases are investigated. ► The effects of the dilution and the transverse fields in core and shell are studied. ► Behavior of the transition temperature with the exchange interaction is given

  2. Magnetic properties of magnetic Co1-xMgxFe2O4 spinel by HTSE method

    International Nuclear Information System (INIS)

    Hamedoun, M.; Benyoussef, A.; Bousmina, M.

    2011-01-01

    Magnetic properties and exchange-coupling interactions of diluted magnetic spinels A 1-x A' x B 2 X 4 , where A and B are magnetic ions, namely Co 1-x Mg x Fe 2 O 4 , were investigated using the high-temperature series expansion method (HTSE) and the distribution method of magnetic cations in the range 0≤x≤1. The magnetic phase diagram and transition temperature versus dilution x were determined using the Pade approximants method along with HTSE. The critical exponent associated with the magnetic susceptibility γ was then deduced. The obtained results are in good agreement with experimental results and critical exponent values are consistent with those suggested by the universality hypothesis.

  3. Optical and Magnetic Properties of Fe Doped ZnO Nanoparticles Obtained by Hydrothermal Synthesis

    Directory of Open Access Journals (Sweden)

    Xiaojuan Wu

    2014-01-01

    Full Text Available Diluted magnetic semiconductors Zn1-xFexO nanoparticles with different doping concentration (x=0, 0.01, 0.05, 0.10, and 0.20 were successfully synthesized by hydrothermal method. The crystal structure, morphology, and optical and magnetic properties of the samples were characterized by X-ray diffraction (XRD, energy dispersive spectrometer (EDS, high-resolution transmission electron microscopy (HRTEM, Raman scattering spectra (Raman, photoluminescence spectra (PL, and the vibrating sample magnetometer (VSM. The experiment results show that all samples synthesized by this method possess hexagonal wurtzite crystal structure with good crystallization, no other impurity phases are observed, and the morphology of the sample shows the presence of ellipsoidal nanoparticles. All the Fe3+ successfully substituted for the lattice site of Zn2+ and generates single-phase Zn1-xFexO. Raman spectra shows that the peak shifts to higher frequency. PL spectra exhibit a slight blue shift and the UV emission is annihilated with the increase of Fe3+ concentration. Magnetic measurements indicated that Fe-doped ZnO samples exhibit ferromagnetic behavior at room temperature and the saturation magnetization is enhanced with the increase of iron doping content.

  4. Effect of disorder on the magnetic and electronic structure of a prospective spin-gapless semiconductor MnCrVAl

    Directory of Open Access Journals (Sweden)

    P. Kharel

    2017-05-01

    Full Text Available Recent discovery of a new class of materials, spin-gapless semiconductors (SGS, has attracted considerable attention in the last few years, primarily due to potential applications in the emerging field of spin-based electronics (spintronics. Here, we investigate structural, electronic, and magnetic properties of one potential SGS compound, MnCrVAl, using various experimental and theoretical techniques. Our calculations show that this material exhibits ≈ 0.5 eV band gap for the majority-spin states, while for the minority-spin it is nearly gapless. The calculated magnetic moment for the completely ordered structure is 2.9 μB/f.u., which is different from our experimentally measured value of almost zero. This discrepancy is explained by the structural disorder. In particular, A2 type disorder, where Mn or Cr atoms exchange their positions with Al atoms, results in induced antiferromagnetic exchange coupling, which, at a certain level of disorder, effectively reduces the total magnetic moment to zero. This is consistent with our x-ray diffraction measurements which indicate the presence of A2 disorder in all of our samples. In addition, we also show that B2 disorder does not result in antiferromagnetic exchange coupling and therefore does not significantly reduce the total magnetic moment.

  5. Path-integral calculation of the density of states in heavily doped strongly compensated semiconductors in a magnetic field

    International Nuclear Information System (INIS)

    Koinov, Z.G.; Yanchev, I.Y.

    1981-09-01

    The density of states in heavily doped strongly compansated semiconductors in a strong magnetic field is calculated by using the path-integral method. The case is considered when correlation exists in the impurity positions owing to the Coulomb interactions between the charged donors and acceptors during the high-temperature preparation of the samples. The semiclassical formula is rederived and corrections to it due to the long-range character of the potential and its short-range fluctuations are obtained. The density of states in the tail is studied and analytical results are given in the classical and quantum cases. (author)

  6. The phase diagrams and the order parameters of the diluted transverse superlattice with antiferromagnetic interface coupling

    International Nuclear Information System (INIS)

    Oubelkacem, A.; El Aouad, N.; Benaboud, A.; Saber, M.

    2004-01-01

    Using the effective field theory with a probability distribution technique that accounts for the self-spin correlation functions, the magnetic properties of the Ising superlattice consisting of two ferromagnetic materials A and B, with L a layers of diluted spins S a =((1)/(2)) and L b layers of diluted spins S b =1 in an applied transverse field Ω with antiferromagnetic interface coupling are examined. For fixed values of the reduced exchange interactions and the concentration c of magnetic atoms, the phase diagrams and the total magnetization for the superlattice are studied as a function of the transverse field and the temperature. We find a number of characteristic phenomena. In particular, the effect of the concentration c of magnetic atoms, the interlayer coupling and the transverse field on both the compensation temperature and the magnetization profiles are clarified. Some of them may be related to the experimental works of rare-earth (RE)/transition metal (TM) multilayer films

  7. Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

    KAUST Repository

    Sun, J.; Kosel, Jü rgen

    2013-01-01

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a

  8. Vacancy induced half-metallicity in half-Heusler semiconductors

    KAUST Repository

    Zhu, Zhiyong; Cheng, Yingchun; Schwingenschlö gl, Udo

    2011-01-01

    First-principles calculations are performed to investigate the effect of vacancies on the electronic structure and magnetic properties of the two prototypical half-Heusler semiconductors NiTiSn and CoTiSb. The spin degeneracy of the host materials

  9. Physics and application of persistent spin helix state in semiconductor heterostructures

    Science.gov (United States)

    Kohda, Makoto; Salis, Gian

    2017-07-01

    In order to utilize the spin degree of freedom in semiconductors, control of spin states and transfer of the spin information are fundamental requirements for future spintronic devices and quantum computing. Spin orbit (SO) interaction generates an effective magnetic field for moving electrons and enables spin generation, spin manipulation and spin detection without using external magnetic field and magnetic materials. However, spin relaxation also takes place due to a momentum dependent SO-induced effective magnetic field. As a result, SO interaction is considered to be a double-edged sword facilitating spin control but preventing spin transport over long distances. The persistent spin helix (PSH) state solves this problem since uniaxial alignment of the SO field with SU(2) symmetry enables the suppression of spin relaxation while spin precession can still be controlled. Consequently, understanding the PSH becomes an important step towards future spintronic technologies for classical and quantum applications. Here, we review recent progress of PSH in semiconductor heterostructures and its device application. Fundamental physics of SO interaction and the conditions of a PSH state in semiconductor heterostructures are discussed. We introduce experimental techniques to observe a PSH and explain both optical and electrical measurements for detecting a long spin relaxation time and the formation of a helical spin texture. After emphasizing the bulk Dresselhaus SO coefficient γ, the application of PSH states for spin transistors and logic circuits are discussed.

  10. Magnetic anisotropy and magnetization switching in ferromagnetic GaMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

    2007-07-01

    Characteristic features of semiconductor spintronics such as the anisotropic magnetoresistance or the spin-polarization of charge carriers are intimately connected with the macroscopic magnetization in a ferromagnetic semiconductor. The orientation of the magnetization is controlled by magnetic anisotropy which predominantly ar ises from crystal symmetry, sample geometry, and strain. A detailed knowledge of this anisotropy is indispensable for the design of novel spintronic devices. In this talk, angle-dependent magnetotransport is demonstrated to be an excellent tool for probing magnetic anisotropy as an alternative to the standard ferromagnetic-resonance method. Moreover, its ability to trace the movement of the magnetization vector in a variable external magnetic field makes it ideally suitable f or studying magnetization switching, a potential basic effect in future logical devices. Experimental data recorded from a variety of different GaMnAs samples a re analyzed by means of model calculations which are based on a series expansion of the resistivity tensor, a numerical minimization of the free enthalpy with respect to the magnetization orientation, and the assumption that the GaMnAs laye rs under study consist of single ferromagnetic domains.

  11. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

    International Nuclear Information System (INIS)

    Filippov, V. V.; Bormontov, E. N.

    2013-01-01

    A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material’s anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors

  12. Features of the electric-field distribution in anisotropic semiconductor wafers in a transverse magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Filippov, V. V., E-mail: wwfilippow@mail.ru [Lipetsk State Pedagogical University (Russian Federation); Bormontov, E. N. [Voronezh State University (Russian Federation)

    2013-07-15

    A macroscopic model of the Hall effects and magnetoresistance in anisotropic semiconductor wafers is developed. The results obtained by solving the electrodynamic boundary problem allow the potential and eddy currents in anisotropic semiconductors to be calculated at different current-contact locations, depending on the parameters of the sample material's anisotropy. The results of this study are of great practical importance for investigating the physical properties of anisotropic semiconductors and simulating the electron-transport phenomena in devices based on anisotropic semiconductors.

  13. 2012 Gordon Research Conference on Defects in Semiconductors - Formal Schedule and Speaker/Poster Program

    Energy Technology Data Exchange (ETDEWEB)

    Glaser, Evan [Naval Research Lab. (NRL), Washington, DC (United States)

    2012-08-17

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  14. Anomalous hall effect in ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Niu, Q.; MacDonald, A. H.

    2002-01-01

    Roč. 88, č. 20 (2002), s. 207208-1-207208-4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * anomalous Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.323, year: 2002

  15. High-throughput ab-initio dilute solute diffusion database.

    Science.gov (United States)

    Wu, Henry; Mayeshiba, Tam; Morgan, Dane

    2016-07-19

    We demonstrate automated generation of diffusion databases from high-throughput density functional theory (DFT) calculations. A total of more than 230 dilute solute diffusion systems in Mg, Al, Cu, Ni, Pd, and Pt host lattices have been determined using multi-frequency diffusion models. We apply a correction method for solute diffusion in alloys using experimental and simulated values of host self-diffusivity. We find good agreement with experimental solute diffusion data, obtaining a weighted activation barrier RMS error of 0.176 eV when excluding magnetic solutes in non-magnetic alloys. The compiled database is the largest collection of consistently calculated ab-initio solute diffusion data in the world.

  16. Electron paramagnetic resonance studies of defects in dilute magnetic alloys

    International Nuclear Information System (INIS)

    Suss, J.T.; Raizman, A.

    1980-01-01

    The EPR spectrum of erbium was used to study the effects of cold-working (rolling and mechanical polishing) in dilute gold-erbium alloys. Variation in the EPR linewidth, intensity and asymmetry parameter (A/B ratio) were investigated. Most of the results could be interpreted in terms of segregation of erbium ions to subgrain boundaries (dislocations) in a surface layer of a few thousand Angstroms. (author)

  17. Phase diagrams of diluted transverse Ising nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Bouhou, S.; Essaoudi, I. [Laboratoire de Physique des Matériaux et Modélisation, des Systèmes, (LP2MS), Unité Associée au CNRST-URAC 08, University of Moulay Ismail, Physics Department, Faculty of Sciences, B.P. 11201 Meknes (Morocco); Ainane, A., E-mail: ainane@pks.mpg.de [Laboratoire de Physique des Matériaux et Modélisation, des Systèmes, (LP2MS), Unité Associée au CNRST-URAC 08, University of Moulay Ismail, Physics Department, Faculty of Sciences, B.P. 11201 Meknes (Morocco); Max-Planck-Institut für Physik Complexer Systeme, Nöthnitzer Str. 38 D-01187 Dresden (Germany); Saber, M. [Laboratoire de Physique des Matériaux et Modélisation, des Systèmes, (LP2MS), Unité Associée au CNRST-URAC 08, University of Moulay Ismail, Physics Department, Faculty of Sciences, B.P. 11201 Meknes (Morocco); Max-Planck-Institut für Physik Complexer Systeme, Nöthnitzer Str. 38 D-01187 Dresden (Germany); Ahuja, R. [Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University, 75120 Uppsala (Sweden); Dujardin, F. [Laboratoire de Chimie et Physique des Milieux Complexes (LCPMC), Institut de Chimie, Physique et Matériaux (ICPM), 1 Bd. Arago, 57070 Metz (France)

    2013-06-15

    In this paper, the phase diagrams of diluted Ising nanowire consisting of core and surface shell coupling by J{sub cs} exchange interaction are studied using the effective field theory with a probability distribution technique, in the presence of transverse fields in the core and in the surface shell. We find a number of characteristic phenomena. In particular, the effect of concentration c of magnetic atoms, the exchange interaction core/shell, the exchange in surface and the transverse fields in core and in surface shell of phase diagrams are investigated. - Highlights: ► We use the EFT to investigate the phase diagrams of Ising transverse nanowire. ► Ferrimagnetic and ferromagnetic cases are investigated. ► The effects of the dilution and the transverse fields in core and shell are studied. ► Behavior of the transition temperature with the exchange interaction is given.

  18. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

    KAUST Repository

    Sun, Jian

    2013-04-01

    An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.

  19. The phase diagrams of the site-diluted spin-1/2 Ising superlattice

    International Nuclear Information System (INIS)

    Saber, A.; Essaoudi, I.; Ainane, A.; Dujardin, F.; Saber, M.; Stebe, B.

    1998-08-01

    Using the effective field theory with a probability distribution technique that accounts for the single-site spin correlations, the critical behavior of a diluted spin-1/2 Ising superlattice consisting of two different ferromagnet materials is examined. The critical temperature of the system is studied as a function of the thickness of the constituents in a unit cell, the concentration of magnetic atoms, and the exchange interactions in each material. It is shown that the properties of the diluted system are different from those of the corresponding pure system. (author)

  20. Some specific features of a surface-screw plasma instability in semiconductors

    International Nuclear Information System (INIS)

    Karavaev, G.F.; Tsipivka, Yu.I.

    1976-01-01

    A numerical analysis of the dispersion relation has been carried out, which enables to discover some new peculiarities in the behaviour of the surface helical instability (SHI) of a semiconductor plasma. To simplify the dispersion relation a semiconductor with nearly equal electron and hole mobilities has been considered. The dependences of threshold characteristics of SHI on a magnetic field H for different angular harmonics are represented graphically. A comparison of the formulas obtained shows that the approximation of truncated series yields an incorrect qualitative dependence of the wavelength on H, whereas asymptotic formulas in the range of strong magnetic fields yield not only a correct qualitative dependence of the threshold characteristics on H, but also a good quantitative agreement

  1. Photocatalytic and magnetic properties of anatase doped with V.theoretical study swig DFT

    International Nuclear Information System (INIS)

    Cabeza, Gabriela F; Castellani, Norberto J

    2008-01-01

    The electronic properties and the presence of ferromagnetism in TiO 2 (anatase) doped with vanadium are investigated using calculations of first principles based on the theory of functional density. This work has a double purpose. First, to establish a relationship between the chemical nature of the doping element and the catalytic properties of the volume. Many studies state that anatase is an excellent photocatalytic semiconductor with possible applications in environmental purification and in the photodegradation of organic components. Anatase has a band width of ∼ 3eV, which can be excited only in the presence of ultraviolet light. Doping with transition metals will reduce this and facilitate excitation with visible light. Second, the effect of doping with V on the presence of magnetism in the substrate is clarified. The magnetic moment for an atom isolated from V is known to be 3 mB, while a volume of V is paramagnetic. Studies show that anatase doped with V displays ferromagnetism at room temperature, converting it into a potential diluted magnetic semiconductor (DMS) that may be used in spintronic instruments. The results obtained show that the presence of V produces a narrowing of 27% in the width of the gap favoring the adsorption at greater wave longitudes. Based on an analysis of the states density, the Fermi level does not cross any state indicating that it is an insulant. There are 3d states of the V located in the band width. The spin-up states are next to the Fermi level and the spin-down states are close to the conduction band. The imbalance between both states implies the presence of ferromagnetism. The magnetic moment found is ∼ 1 mB according to the experimental results obtained from the literature

  2. Electronic structure of point defects in semiconductors

    International Nuclear Information System (INIS)

    Bruneval, Fabien

    2014-01-01

    This 'Habilitation a diriger des Recherches' memoir presents most of my scientific activities during the past 7 years, in the field of electronic structure calculations of defects in solids. Point defects (vacancies, interstitials, impurities) in functional materials are a key parameter to determine if these materials will actually fill the role they have been assigned or not. Indeed, the presence of defects cannot be avoided when the temperature is increased or when the material is subjected to external stresses, such as irradiation in the nuclear reactors and in artificial satellites with solar radiations. However, in many cases, defects are introduced in the materials on purpose to tune the electronic transport, optical or even magnetic properties. This procedure is called the doping of semiconductors, which is the foundation technique for transistors, diodes, or photovoltaic cells. However, doping is not always straightforward and unexpected features may occur, such as doping asymmetry or Fermi level pinning, which can only be explained by complex phenomena involving different types of defects or complexes of defects. In this context, the calculations of electronic structure ab initio is an ideal tool to complement the experimental observations, to gain the understanding of phenomena at the atomic level, and even to predict the properties of defects. The power of the ab initio calculations comes from their ability to describe any system of electrons and nuclei without any specific adjustment. But although there is a strong need for numerical simulations in this field, the ab initio calculations for defects are still under development as of today. The work presented in this memoir summarizes my contributions to methodological developments on this subject. These developments have followed two main tracks. The first topic is the better understanding of the unavoidable finite size effects. Indeed, defects in semiconductors or insulators are generally present in

  3. Minority anion substitution by Ni in ZnO

    CERN Document Server

    Pereira, Lino Miguel da Costa; Correia, João Guilherme; Amorim, Lígia Marina; Silva, Daniel José; David-Bosne, Eric; Decoster, Stefan; da Silva, Manuel Ribeiro; Temst, Kristiaan; Vantomme, André

    2013-01-01

    We report on the lattice location of implanted Ni in ZnO using the $\\beta$− emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors.

  4. Defect-induced ferromagnetism in semiconductors: A controllable approach by particle irradiation

    International Nuclear Information System (INIS)

    Zhou, Shengqiang

    2014-01-01

    Making semiconductors ferromagnetic has been a long dream. One approach is to dope semiconductors with transition metals (TM). TM ions act as local moments and they couple with free carriers to develop collective magnetism. However, there are no fundamental reasons against the possibility of local moment formation from localized sp states. Recently, ferromagnetism was observed in nonmagnetically doped, but defective semiconductors or insulators including ZnO and TiO 2 . This kind of observation challenges the conventional understanding of ferromagnetism. Often the defect-induced ferromagnetism has been observed in samples prepared under non-optimized condition, i.e. by accident or by mistake. Therefore, in this field theory goes much ahead of experimental investigation. To understand the mechanism of the defect-induced ferromagnetism, one needs a better controlled method to create defects in the crystalline materials. As a nonequilibrium and reproducible approach of inducing defects, ion irradiation provides such a possibility. Energetic ions displace atoms from their equilibrium lattice sites, thus creating mainly vacancies, interstitials or antisites. The amount and the distribution of defects can be controlled by the ion fluence and energy. By ion irradiation, we have generated defect-induced ferromagnetism in ZnO, TiO 2 and SiC. In this short review, we also summarize some results by other groups using energetic ions to introduce defects, and thereby magnetism in various materials. Ion irradiation combined with proper characterizations of defects could allow us to clarify the local magnetic moments and the coupling mechanism in defective semiconductors. Otherwise we may have to build a new paradigm to understand the defect-induced ferromagnetism

  5. Study of magnetism in Ni-Cr hardface alloy deposit on 316LN stainless steel using magnetic force microscopy

    Science.gov (United States)

    Kishore, G. V. K.; Kumar, Anish; Chakraborty, Gopa; Albert, S. K.; Rao, B. Purna Chandra; Bhaduri, A. K.; Jayakumar, T.

    2015-07-01

    Nickel base Ni-Cr alloy variants are extensively used for hardfacing of austenitic stainless steel components in sodium cooled fast reactors (SFRs) to avoid self-welding and galling. Considerable difference in the compositions and melting points of the substrate and the Ni-Cr alloy results in significant dilution of the hardface deposit from the substrate. Even though, both the deposit and the substrate are non-magnetic, the diluted region exhibits ferromagnetic behavior. The present paper reports a systematic study carried out on the variations in microstructures and magnetic behavior of American Welding Society (AWS) Ni Cr-C deposited layers on 316 LN austenitic stainless steels, using atomic force microscopy (AFM) and magnetic force microscopy (MFM). The phase variations of the oscillations of a Co-Cr alloy coated magnetic field sensitive cantilever is used to quantitatively study the magnetic strength of the evolved microstructure in the diluted region as a function of the distance from the deposit/substrate interface, with the spatial resolution of about 100 nm. The acquired AFM/MFM images and the magnetic property profiles have been correlated with the variations in the chemical compositions in the diluted layers obtained by the energy dispersive spectroscopy (EDS). The study indicates that both the volume fraction of the ferromagnetic phase and its ferromagnetic strength decrease with increasing distance from the deposit/substrate interface. A distinct difference is observed in the ferromagnetic strength in the first few layers and the ferromagnetism is observed only near to the precipitates in the fifth layer. The study provides a better insight of the evolution of ferromagnetism in the diluted layers of Ni-Cr alloy deposits on stainless steel.

  6. Optical properties of semiconductors quantum microcavity structures

    International Nuclear Information System (INIS)

    Afshar, A.M.

    1996-12-01

    The principal phenomenon investigated in this thesis is vacuum Rabi coupling in semiconductor microcavity structures. In these structures quantum well excitons are embedded in a Fabry - Perot like cavity, defined by two semiconductor dielectric mirrors. In such a system the coupled exciton and cavity photon mode form a mixed - mode polariton, where on - resonance there are two branches, each having 50% exciton and 50% photon character. The separation between the upper and lower branches is a measure of the coupling strength where the strength is dependent on the exciton oscillator strength. This interaction is known as vacuum Rabi coupling, and clear anticrossing is seen when the exciton is tuned through the cavity. In our reflectivity experiments we demonstrate control of the coupling between the cavity mode and the exciton by varying temperature, applied electric or magnetic field. Modelling of the reflectivity spectra and the tuning was done using a Transfer Matrix Reflectivity (TMR) model or a linear dispersion model, where in both cases the excitons are treated as Lorentz oscillators. Temperature tuning is achieved because exciton energy decreases with temperature at a much faster rate than the cavity mode. We have demonstrated vacuum Rabi coupling of the cavity mode with both the heavy - hole and light - hole excitons. Electric field tuning is achieved via the quantum confined Stark effect which decreases the exciton energy with increasing field, whilst at the same time the cavity mode energy remains constant. A study of how the electric field reduction of exciton oscillator strength reduces the vacuum Rabi coupling strength is performed. We report the first observation in a semiconductor structure of motional narrowing, seen in both electric field and in temperature tuning experiments at high magnetic field. In magnetic field studies we show how magnetic field induced increase in exciton oscillator strength affects the vacuum Rabi coupling. We also show by

  7. Synthesis of Zn{sub 0.95}Cr{sub 0.05}O DMS by co-precipitation and ceramic methods: Structural and magnetization studies

    Energy Technology Data Exchange (ETDEWEB)

    Paul Joseph, D. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India); Naveenkumar, S. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India); Sivakumar, N. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India); Venkateswaran, C. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India)]. E-mail: cvunom@hotmail.com

    2006-05-10

    Transitional metal ions-substituted ZnO are recently explored for SPINTRONICS applications. Synthesis of single-phase oxide 'diluted magnetic semiconductors' (DMS) is a must to explore the magnetic properties arising due to the strong sp-d exchange interaction. The synthesis route plays a vital role in this aspect. In this work, we have prepared Zn{sub 0.95}Cr{sub 0.05}O by using the co-precipitation method and also the standard ceramic method and optimized the conditions to obtain the single-phase compound. X-ray diffraction measurements were done on Zn{sub 0.95}Cr{sub 0.05}O annealed and sintered at various temperatures. Comparing these results, we conclude that the co-precipitation method is more convenient for obtaining single-phase compound by the relatively low temperature processing of the precipitated hydroxides. Pelleted sample examined for its magnetic property using a vibrating sample magnetometer (VSM) indicated ferromagnetic-like behavior at 300 K and a spin-glass state at 77 K.

  8. First-principles calculations of electronic, magnetic and optical properties of HoN doped with TM (Ti, V, Cr, Mn, Co and Ni)

    Science.gov (United States)

    Rouchdi, M.; Salmani, E.; Dehmani, M.; Ez-Zahraouy, H.; Hassanain, N.; Benyoussef, A.; Mzerd, A.

    2018-02-01

    Using the first-principles calculations within the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA), the structural, optical and magnetic properties of rare-earth nitride Ho0.95TM0.05N doped with transition metal (TM) atoms (Ti, V, Cr, Mn, Co and Ni) are investigated as a function the generalized gradient approximation and self-interaction correction (GGA-SIC) approximation. The optical properties are studied in detail by using ab-initio calculations. Using GGA-SIC we have showed that the bandgap value is in good agreement with the experimental value. Using GGA-SIC approximation for HoN, we have obtained a bandgap of 0.9 eV. Some of the dilute magnetic semiconductors (DMS) like Ho0.95TM0.05N under study exhibit a half-metallic behavior, which makes them suitable for spintronic applications. Moreover, the optical absorption spectra confirm the ferromagnetic stability based on the charge state of magnetic impurities.

  9. FIR spectroscopy of iron-based semimagnetic semiconductors

    NARCIS (Netherlands)

    Hausenblas, M.; Claessen, L.M.; Wittlin, A.; Twardowski, A.; Ortenberg, von M.; Jonge, de W.J.M.; Wyder, P.

    1989-01-01

    We report far-infrared studies of low energy levels of Fe2+ ions in ZnSe and related wide-gap semimagnetic semiconductors in magnetic fields up to 20 T. Transitions between 5E levels are observed and the experimental results are in good agreement with the standard model of single iron impurities in

  10. Optical and magnetic properties of Sn{sub 1−x}Mn{sub x}O{sub 2} dilute magnetic semiconductor nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Tokeer, E-mail: tahmad3@jmi.ac.in [Nanochemistry Laboratory, Department of Chemistry, Jamia Millia Islamia, New Delhi 110025 (India); Khatoon, Sarvari [Nanochemistry Laboratory, Department of Chemistry, Jamia Millia Islamia, New Delhi 110025 (India); Coolahan, Kelsey [Department of Physics and Astronomy, Rowan University, 201 Mullica Hill Road, Glassboro, NJ 08028 (United States)

    2014-12-05

    Highlights: • Monophasic Mn-doped SnO{sub 2} nanoparticles by solvothermal method for first time. • High surface area with smaller particle size. • Increase in band gap with increasing Mn concentration. • Sn{sub 1−x}Mn{sub x}O{sub 2} (x = 0.05 and 0.10) revealed the parasitic ferromagnetism. • Sn{sub 0.85}Mn{sub 0.15}O{sub 2} showed paramagnetic behaviour. - Abstract: Sn{sub 1−x}Mn{sub x}O{sub 2} (x = 0.05, 0.10 and 0.15) nanoparticles with tetragonal structure have been successfully synthesized by solvothermal method using oxalate precursor route. The oxalate precursors and its corresponding oxides were characterized by powder X-ray diffraction (PXRD), thermogravimetric (TG), fourier transform infrared (FTIR) and transmission electron microscopic (TEM) studies. PXRD studies showed the highly crystalline and monophasic nature of the solid solutions. The shifting of X-ray reflections towards higher angle is attributed to the incorporation of Mn{sup 2+} ions in SnO{sub 2} host lattice. The average particle size was found to be in the range of 5–11 nm. Reflectance measurements showed blue shift in energy band gap which increases with increasing Mn{sup 2+} concentration. Surface area of these nanoparticles (59–388 m{sup 2}/g) was found to be high which increases with increasing the dopant ion concentration. Mn-doped SnO{sub 2} showed distinct magnetic behaviour with different manganese concentration. Sn{sub 1−x}Mn{sub x}O{sub 2} (x = 0.05 and 0.10) revealed the parasitic ferromagnetism, however on increasing x = 0.15, sample showed paramagnetic behaviour.

  11. A primary exploration to quasi-two-dimensional rare-earth ferromagnetic particles: holmium-doped MoS2 sheet as room-temperature magnetic semiconductor

    Science.gov (United States)

    Chen, Xi; Lin, Zheng-Zhe

    2018-05-01

    Recently, two-dimensional materials and nanoparticles with robust ferromagnetism are even of great interest to explore basic physics in nanoscale spintronics. More importantly, room-temperature magnetic semiconducting materials with high Curie temperature is essential for developing next-generation spintronic and quantum computing devices. Here, we develop a theoretical model on the basis of density functional theory calculations and the Ruderman-Kittel-Kasuya-Yoshida theory to predict the thermal stability of two-dimensional magnetic materials. Compared with other rare-earth (dysprosium (Dy) and erbium (Er)) and 3 d (copper (Cu)) impurities, holmium-doped (Ho-doped) single-layer 1H-MoS2 is proposed as promising semiconductor with robust magnetism. The calculations at the level of hybrid HSE06 functional predict a Curie temperature much higher than room temperature. Ho-doped MoS2 sheet possesses fully spin-polarized valence and conduction bands, which is a prerequisite for flexible spintronic applications.

  12. 33rd International Conference on the Physics of Semiconductors

    International Nuclear Information System (INIS)

    2017-01-01

    Preface to the Proceedings of the 33rd International Conference on the Physics of Semiconductors, Beijing, 2016 Shaoyun Huang 1 , Yingjie Xing 1 , Yang Ji 2 , Dapeng Yu 3 , and Hongqi Xu 1 1 Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China 2 SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3 State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China From July 31 st to August 5 th , 2016, the 33rd International Conference on the Physics of Semiconductors (ICPS 2016) was held in Beijing, China, with a great success. The International Conference on the Physics of Semiconductors began in the 1950’s and is a premier biennial meeting for reporting all aspects of semiconductor physics including electronic, structural, optical, magnetic and transport properties. Reflecting the state of the art developments in semiconductor physics, ICPS 2016 served as an international forum for scholars, researchers, and specialists across the globe to discuss future research directions and technological advancements. The main topics of ICPS 2016 included: • Material growth, structural properties and characterization, phonons • Wide-bandgap semiconductors • Narrow-bandgap semiconductors • Carbon: nanotubes and graphene • 2D Materials beyond graphene • Organic semiconductors • Topological states of matter, topological Insulators and Weyl semimetals • Transport in heterostructures • Quantum Hall effects • Spintronics and spin phenomena • Electron devices and applications • Optical properties, optoelectronics, solar cells • Quantum optics, nanophotonics • Quantum information • Other topics in semiconductor physics and devices • Special topic: Majorana fermions in solid state (paper)

  13. Electric-field gradients at Ta impurities in Sc{sub 2}O{sub 3} semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Richard, Diego, E-mail: richard@fisica.unlp.edu.ar [Departamento de Fisica e Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina. (Argentina); Munoz, Emiliano L. [Departamento de Fisica e Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina. (Argentina); Errico, Leonardo A. [Departamento de Fisica e Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina. (Argentina); Universidad Nacional del Noroeste Bonaerense (UNNOBA), Monteagudo 2772, 2700 Pergamino, Argentina. (Argentina); Renteria, Mario [Departamento de Fisica e Instituto de Fisica La Plata (IFLP, CONICET La Plata), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina. (Argentina)

    2012-08-15

    In this work we present an ab initio study of Ta-doped Sc{sub 2}O{sub 3} semiconductor. Calculations were performed at dilute Ta impurities located at both cationic sites of the host structure, using the Augmented Plane Wave plus Local Orbitals (APW+lo) method. The structural atomic relaxations and the electric-field gradients (EFG) were studied for different charge states of the cell in order to simulate different ionization states of the double-donor Ta impurity. From the results for the EFG tensor at Ta impurity sites and the comparison with experimental results obtained using the Time-Differential {gamma}-{gamma} Perturbed-Angular-Correlations technique we could determined the structural distortions induced by the Ta impurity and the electronic structure of the doped-semiconductor.

  14. Faraday effect in semimagnetic semiconductors

    International Nuclear Information System (INIS)

    Nikitin, P.I.; Savchuk, A.I.

    1990-01-01

    Experimental and theoretical studies of the Faraday effect in a new class of materials -semimagnetic semiconductors (SS) have been received. Mechanisms of the giant Faraday effect in SS based on s, p-d exchange interaction of excitons, electrons and holes with magnetic ions have been discussed. Faraday rotation as a function of a radiation wavelength, magnetic component concentration, temperature, magnetic field intensity for crystals A 2 B 6 (Mn)A 2 x -1Mn xB 6 : and other SS (GaAs(Mn), CdP 2 (Mn),Pb 1-X2 )Mn x J 2 have been considered. We have attended to use FR for the study of a paramagnetic-spin glass transmission for determining the role of the relaxation effects with a participation of magnetic Mn 2+ ions, exitons, polarons in the direct and inverse Faraday effects. In addition the features of FR in thin films of SS and in spin superlattices have been discussed. Finally, we have analysed possibilities of applying the SS Faraday effect for developing magnetooptic devices (optical isolators and fibre optic sensors of magnetic fields)

  15. Effects of Coupling Lens on Optical Refrigeration of Semiconductors

    International Nuclear Information System (INIS)

    Kai, Ding; Yi-Ping, Zeng

    2008-01-01

    Optical refrigeration of semiconductors is encountering efficiency difficulties caused by nonradiative recombination and luminescence trapping. A commonly used approach for enhancing luminescence efficiency of a semiconductor device is coupling a lens with the device. We quantitatively study the effects of a coupling lens on optical refrigeration based on rate equations and photon recycling, and calculated cooling efficiencies of different coupling mechanisms and of different lens materials. A GaAs/GaInP heterostructure coupled with a homo-epitaxial GaInP hemispherical lens is recommended. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  16. Magnetoviscous effect in ferrofluids diluted with sheep blood

    Science.gov (United States)

    Nowak, J.; Borin, D.; Haefner, S.; Richter, A.; Odenbach, S.

    2017-11-01

    Suspensions of magnetic nanoparticles in suitable carrier liquids, denoted as ferrofluids, are in the focus of current research in the biomedical area. Those fluids can be potentially used for the treatment of cancer by coupling chemotherapeutic agents and accumulating them in the diseased region with the help of external magnetic fields or by artificially local induced heating. Those applications rely on the help of external magnetic fields, which are well known to drastically influence the physical behaviour of ferrofluids. This study investigates the changing viscosity of a biocompatible ferrofluid in a flow situation close to the situation found in a biomedical application. For this purpose blood as diluting agent and thin capillaries have been utilised. The strong magnetoviscous effects found lead to the assumption of quite big changes of the microstructure due to the external magnetic fields, which was investigated and quantified using a microscopic setup. In the result an increases of the structure size as well as faster structure formation in the stronger magnetic fields were observed. Moreover, with increasing duration of the applied magnetic field the size of the structures increases too. The observed process of the structure formation is reversible.

  17. (Ga,Fe)Sb: A p-type ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh; Anh, Le Duc; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan)

    2014-09-29

    A p-type ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 3.9%–13.7%) has been grown by low-temperature molecular beam epitaxy (MBE) on GaAs(001) substrates. Reflection high energy electron diffraction patterns during the MBE growth and X-ray diffraction spectra indicate that (Ga,Fe)Sb layers have the zinc-blende crystal structure without any other crystallographic phase of precipitates. Magnetic circular dichroism (MCD) spectroscopy characterizations indicate that (Ga,Fe)Sb has the zinc-blende band structure with spin-splitting induced by s,p-d exchange interactions. The magnetic field dependence of the MCD intensity and anomalous Hall resistance of (Ga,Fe)Sb show clear hysteresis, demonstrating the presence of ferromagnetic order. The Curie temperature (T{sub C}) increases with increasing x and reaches 140 K at x = 13.7%. The crystal structure analyses, magneto-transport, and magneto-optical properties indicate that (Ga,Fe)Sb is an intrinsic ferromagnetic semiconductor.

  18. Ultrafast spin injection from Cd1-x Mn x Te magnetic barriers into a CdTe quantum well studied by pump-probe spectroscopy

    International Nuclear Information System (INIS)

    Aoshima, I.; Nishibayashi, K.; Souma, I.; Murayama, A.; Oka, Y.

    2006-01-01

    Spin injection from diluted magnetic semiconductor (DMS) barriers of Cd 1- x Mn x Te into a quantum well (QW) of CdTe is studied, by means of pump-probe absorption spectroscopy in magnetic fields. Fast decay characteristics of circularly polarized differential absorbances of spin-polarized excitons in the DMS barrier show the exciton injection time of 6 ps from the barriers into the QW. In accordance with the fast relaxation of the spin-polarized excitons from the barrier, we observe the rise of circular polarization degree for the differential absorption of the CdTe QW in magnetic fields, evidently indicating the spin injection. In addition, the circular polarization degree up to 0.3 is developed in the well immediately after pumping, originating from the fast relaxation of a heavy hole (hh) spin less than 0.2 ps, due to the giant Zeeman effect caused by the penetration of the hh wave function into the DMS barriers

  19. Onset of itinerant ferromagnetism associated with semiconductor ...

    Indian Academy of Sciences (India)

    In this paper, the magnetic and transport properties of the TiNb1−CoSn solid solution compounds with half Heusler cubic MgAgAs-type structure have been studied. This work shows the onset of ferromagnetism associated with a semiconductor to metal transition. The transition occurs directly from ferromagnetic metal to ...

  20. Quasi-phase transformation in ferromagnetic semiconductors with two-charged donors

    International Nuclear Information System (INIS)

    Kovalenko, A.A.; Nagaev, Eh.L.

    1978-01-01

    Effect of term inversion of two-charged donors 1s2s → 1s 2 on properties of ferromagnetic semiconductors, has been investigated. Term inversion is accompanied by changes in local magnetic ordering in the donor area and takes place as spread phase transformation of the first type in the system of n 2 atoms, enveloped by donor 2s-orbit. It is a reason for creating not only heat capacity peak at Tsub(c), but another peak at inversion temperature Tsub(i) as well. At temperatures T > Tsub(i) introduction of external magnetic field can lead to a reverse term inversion 1s 2 → 1s2s, under that condition crystal magnetization should clearly increase. Term inversion tells upon electric properties of crystals: in Ti inversion point, the energy of conductivity activation of ungenerate semiconductors changes abruptly. In the case of larger concentrations of donors, term inversion can lead to metal-insulator transformation. Analysis of experimental data on magnetic susceptibility of EuO crystals with oxygen vacancies, shows that transformation in these crystals takes place according to a different mechanism

  1. Study of magnetism in Ni–Cr hardface alloy deposit on 316LN stainless steel using magnetic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kishore, G.V.K.; Kumar, Anish, E-mail: anish@igcar.gov.in; Chakraborty, Gopa; Albert, S.K; Rao, B. Purna Chandra; Bhaduri, A.K.; Jayakumar, T.

    2015-07-01

    Nickel base Ni–Cr alloy variants are extensively used for hardfacing of austenitic stainless steel components in sodium cooled fast reactors (SFRs) to avoid self-welding and galling. Considerable difference in the compositions and melting points of the substrate and the Ni–Cr alloy results in significant dilution of the hardface deposit from the substrate. Even though, both the deposit and the substrate are non-magnetic, the diluted region exhibits ferromagnetic behavior. The present paper reports a systematic study carried out on the variations in microstructures and magnetic behavior of American Welding Society (AWS) Ni Cr–C deposited layers on 316 LN austenitic stainless steels, using atomic force microscopy (AFM) and magnetic force microscopy (MFM). The phase variations of the oscillations of a Co–Cr alloy coated magnetic field sensitive cantilever is used to quantitatively study the magnetic strength of the evolved microstructure in the diluted region as a function of the distance from the deposit/substrate interface, with the spatial resolution of about 100 nm. The acquired AFM/MFM images and the magnetic property profiles have been correlated with the variations in the chemical compositions in the diluted layers obtained by the energy dispersive spectroscopy (EDS). The study indicates that both the volume fraction of the ferromagnetic phase and its ferromagnetic strength decrease with increasing distance from the deposit/substrate interface. A distinct difference is observed in the ferromagnetic strength in the first few layers and the ferromagnetism is observed only near to the precipitates in the fifth layer. The study provides a better insight of the evolution of ferromagnetism in the diluted layers of Ni–Cr alloy deposits on stainless steel. - Highlights: • Study of evolution of ferromagnetism in Comonoy-6 deposit on austenitic steel. • Magnetic force microscopy (MFM) exhibited ferromagnetic matrix in first two layers. • The maximum MFM

  2. Multiphonon resonant Raman scattering in the semimagnetic semiconductor Cd1-xMnxTe: Froehlich and deformation potential exciton-phonon interaction

    International Nuclear Information System (INIS)

    Riera, R; Rosas, R; Marin, J L; Bergues, J M; Campoy, G

    2003-01-01

    A theory describing multiphonon resonant Raman scattering (MPRRS) processes in wide-gap diluted magnetic semiconductors is presented, with Cd 1-x Mn x Te as an example. The incident radiation frequency ω l is taken above the fundamental absorption region. The photoexcited electron and hole make real transitions through the LO phonon, when one considers Froehlich (F) and deformation potential (DP) interactions. The strong exchange interaction, typical of these materials, leads to a large spin splitting of the exciton states in the magnetic field. Neglecting Landau quantization, this Zeeman splitting gives rise to the formation of eight bands (two conduction and six valence ones) and ten different exciton states according to the polarization of the incident light. Explicit expressions for the MPRRS intensity of second and third order, the indirect creation and annihilation probabilities, the exciton lifetime, and the probabilities of transition between different exciton states and different types of exciton as a function of ω l and the external magnetic field are presented. The selection rules for all hot exciton transitions via exciton-photon interaction and F and DP exciton-phonon interactions are investigated. The exciton energies, as a function of B, the Mn concentration x, and the temperature T, are compared to a theoretical expression. Graphics for creation and annihilation probabilities, lifetime, and Raman intensity of second and third order are discussed

  3. Diluted-Magenetic Semiconductor (DMS) Tunneling Devices for the Terahertz Regime

    Science.gov (United States)

    2014-12-10

    major success being the Wigner function simulation of magnetic field tuning of transient spin-dependent RTD structures, and while GaN barrier devices...The simulations that were performed used Wigner functions , but in all of our studies the Wigner function equations arose from a Weyl transformation...the equations to the Wigner function used in the simulations and well as the drift an diffusion equations used in part of the study we deal with a

  4. Co-Doped ZnO nanoparticles: minireview.

    Science.gov (United States)

    Djerdj, Igor; Jaglicić, Zvonko; Arcon, Denis; Niederberger, Markus

    2010-07-01

    Diluted magnetic semiconductors with a Curie temperature exceeding 300 K are promising candidates for spintronic devices and spin-based electronic technologies. We review recent achievements in the field of one of them: Co-doped ZnO at the nanoparticulate scale.

  5. Acoustomagnetoelectric effect in nondegenerate semiconductor with nonparabolic energy dispersion law

    International Nuclear Information System (INIS)

    Mensah, N.G.; Nkrumah, G.; Mensah, S.Y.; Allotey, F.K.A.

    2007-10-01

    We have studied acoustomagnetoelectric effect in nondegenerate semiconductor with nonparabolic energy dispersion Law. Attention was focused on the surface acoustomagnetoelectric effect (SAME). This is to reduce Joule's energy dissipated in the sample. It was observed that in a weak magnetic field the SAME is proportional to H 2 whiles in strong magnetic field it is independent of H. The effect is also dependent on the the scattering mechanism and finally SAME changes sign when the magnetic field is turned through 90 deg. (author)

  6. The bond diluted spin-1 Blume-Emery-Griffiths model in a transverse field

    International Nuclear Information System (INIS)

    Ez Zahraouy, H.

    1993-09-01

    The effect of Bond-dilution on the magnetic properties of a quantum transverse spin-1 Blume-Emery-Griffiths model is investigated within an expansion technique for cluster identities of a spin-1 localized spin system. The longitudinal and transverse magnetizations and quadrupolar moments are studied for several values of the bond concentration. A general formula, applicable to structures with arbitrary coordination number N, are given. (author). 41 refs, 6 figs

  7. Magnetism reflectometer study shows LiF layers improve efficiency in spin valve devices

    Energy Technology Data Exchange (ETDEWEB)

    Bardoel, Agatha A [ORNL; Lauter, Valeria [ORNL; Szulczewski, Greg J [ORNL

    2012-01-01

    New, more efficient materials for spin valves - a device used in magnetic sensors, random access memories, and hard disk drives - may be on the way based on research using the magnetism reflectometer at Oak Ridge National Laboratory (ORNL). Spin valve devices work by means of two or more conducting magnetic material layers that alternate their electrical resistance depending on the layers alignment. Giant magnetoresistance is a quantum mechanical effect first observed in thin film structures about 20 years ago. The effect is observed as a significant change in electrical resistance, depending on whether the magnetization of adjacent ferromagnetic layers is in a parallel or an antiparallel magnetic alignment. 'What we are doing here is developing new materials. The search for new materials suitable for injecting and transferring carriers with a preferential spin orientation is most important for the development of spintronics,' said Valeria Lauter, lead instrument scientist on the magnetism reflectometer at the Spallation Neutron Source (SNS), who collaborated on the experiment. The researchers discovered that the conductivity of such materials is improved when an organic polymer semiconductor layer is placed between the magnetic materials. Organic semiconductors are now the material of choice for future spin valve devices because they preserve spin coherence over longer times and distances than conventional semiconductors. While research into spin valves has been ongoing, research into organic semiconductors is recent. Previous research has shown that a 'conductivity mismatch' exists in spin valve systems in which ferromagnetic metal electrodes interface with such organic semiconductors as Alq3 ({pi}-conjugated molecule tris(8-hydroxy-quinoline) aluminium). This mismatch limits the efficient injection of the electrons from the electrodes at the interface with the semiconductor material. However, lithium fluoride (LiF), commonly used in light

  8. Dynamic detection of spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance (Conference Presentation)

    Science.gov (United States)

    Crowell, Paul A.; Liu, Changjiang; Patel, Sahil; Peterson, Tim; Geppert, Chad C.; Christie, Kevin; Stecklein, Gordon; Palmstrøm, Chris J.

    2016-10-01

    A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this new approach enables a measurement of short spin lifetimes (C. Liu, S. J. Patel, T. A. Peterson, C. C. Geppert, K. D. Christie, C. J. Palmstrøm, and P. A. Crowell, "Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance," Nature Communications 7, 10296 (2016). http://dx.doi.org/10.1038/ncomms10296

  9. Degradation of quantum dots and change of their energy spectra in semimagnetic semiconductors under nuclear irradiation

    Directory of Open Access Journals (Sweden)

    G. V. Vertsimakha

    2011-09-01

    Full Text Available Spreading of the potential profile for the charge carriers in quantum dots in binary semiconductors and the shift of the quantum levels for electrons, holes and excitons under the nuclear irradiation has been investigated. The spreading occurs because of the redistribution of atoms of different kinds between the barrier and quantum dot due to radiationenhanced diffusion. It is shown that in semimagnetic semiconductors (e.g. CdTe/(Cd, MnTe, in which a giant magnetic splitting of exciton levels exists, the redistribution of magnetic ions under irradiation causes significant increase in the splitting of exciton levels in a magnetic field in a quantum dot.

  10. Megavolt nanosecond generator with semiconductor current breaker

    CERN Document Server

    Bushlyakov, A I; Rukin, S N; Slovikovskij, B G; Timoshenkov, S P

    2002-01-01

    The heavy-current nanosecond generator with the pulse capacity up to 1.6 GW and output voltage of 0.5-1 MW is described. The generator contains four capacity storages, one induction storage and six solid body commutators: one thyristor, four magnetic commutators and a semiconductor current breaker on the SOS-diodes. The results of studies on the energy change-over efficiency through a semiconductor breaker by various external resistance loads as well as the results of the thermal and frequency tests are presented. It is established that selection of the optimal cooling system provides for the generator continuous mode of operation with the pulse sequence frequency from 300 Hz up to 850 Hz

  11. Spin Injection from Ferromagnetic Metal Directly into Non-Magnetic Semiconductor under Different Injection Currents

    International Nuclear Information System (INIS)

    Ning, Deng; Lei, Zhang; Shu-Chao, Zhang; Pei-Yi, Chen; Jian-Shi, Tang

    2010-01-01

    For ferromagnetic metal (FM)/semiconductor (SC) structure with ohmic contact, the effect of carrier polarization in the semiconductor combined with drift part of injection current on current polarization is investigated. Based on the general model we established here, spin injection efficiency under different injection current levels is calculated. Under a reasonable high injection current, current polarization in the semiconductor is actually much larger than that predicted by the conductivity mismatch model because the effect of carrier polarization is enhanced by the increasing drift current. An appreciable current polarization of 1% could be achieved for the FM/SC structure via ohmic contact, which means that efficient spin injection from FM into SC via ohmic contact is possible. The reported dependence of current polarization on temperature is verified quantitatively. To achieve even larger spin injection efficiency, a gradient doping semiconductor is suggested to enhance the drift current effect

  12. Electronic structure of chromium-doped lead telluride-based diluted magnetic semiconductors

    International Nuclear Information System (INIS)

    Skipetrov, E.P.; Pichugin, N.A.; Slyn'ko, E.I.; Slyn'ko, V.E.

    2011-01-01

    The crystal structure, composition, galvanomagnetic and oscillatory properties of the Pb 1-x-y Sn x Cr y Te (x = 0, 0.05-0.30, y ≤ 0.01) alloys have been investigated with varying matrix composition and chromium impurity concentration. It is shown that the chromium impurity atoms dissolve in the crystal lattice at least up to 1 mol.%. The following increase of the chromium concentration leads to the appearance of microscopic regions enriched with chromium and inclusions of Cr-Te compounds. A decrease of the hole concentration, a p-n-conversion of the conductivity type and a pinning of the Fermi level by the chromium resonant level are observed with increasing chromium content. Initial rates of changes in the free carrier concentration on doping are determined. The dependences of electron concentration and Fermi level on tin content are calculated by the two-band Kane dispersion relation. A diagram of electronic structure rearrangement for the chromium-doped alloys with varying the matrix composition is proposed.

  13. Propagation of electro-kinetic waves in magnetized GaN semiconductor with nano-sized ion colloids

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Ajay [Government College, Garoth, Dist. Mandsaur (M P) (India); Sharma, Giriraj, E-mail: grsharma@gmail.com [SRJ Government Girls’ College, Neemuch (M P) (India); Jat, K. L. [Swami Vivekanand Government P G College, Neemuch (M P) (India); Rishi, M. P. [Shahid Bhagat Singh Government P G College, Jaora, Dist Ratlam (M P) (India)

    2015-07-31

    Based on hydrodynamic model of multi-component plasma, an analytical study on propagation of longitudinal electro-kinetic (LEK) waves in wurtzite and zincblende structures of GaN is carried out. Nano-sized ion colloids (NICs) are embedded in the sample by the technique of ion-implantation. The implanted NICs are considered massive by an order as compared to the host lattice points and do not participate in Based LEK perturbations. Though, the NICs are continuously bombarded by the electrons as well as the holes yet, the former acquires a net negative charge owing to relatively higher mobility of electrons and consequently results into depletion of electron density in the medium. It i s found that the presence of charged NICs significantly modifies the dispersion and amplification characteristics of LEK waves in magnetized GaN semiconductor plasma and their role becomes increasingly effective as the fraction of charge on them increases.

  14. Propagation of electro-kinetic waves in magnetized GaN semiconductor with nano-sized ion colloids

    International Nuclear Information System (INIS)

    Saxena, Ajay; Sharma, Giriraj; Jat, K. L.; Rishi, M. P.

    2015-01-01

    Based on hydrodynamic model of multi-component plasma, an analytical study on propagation of longitudinal electro-kinetic (LEK) waves in wurtzite and zincblende structures of GaN is carried out. Nano-sized ion colloids (NICs) are embedded in the sample by the technique of ion-implantation. The implanted NICs are considered massive by an order as compared to the host lattice points and do not participate in Based LEK perturbations. Though, the NICs are continuously bombarded by the electrons as well as the holes yet, the former acquires a net negative charge owing to relatively higher mobility of electrons and consequently results into depletion of electron density in the medium. It i s found that the presence of charged NICs significantly modifies the dispersion and amplification characteristics of LEK waves in magnetized GaN semiconductor plasma and their role becomes increasingly effective as the fraction of charge on them increases

  15. First principles density functional calculation of magnetic moment and hyperfine fields of dilute transition metal impurities in Gd host

    International Nuclear Information System (INIS)

    Mohanta, S.K.; Mishra, S.N.; Srivastava, S.K.

    2014-01-01

    We present first principles calculations of electronic structure and magnetic properties of dilute transition metal (3d, 4d and 5d) impurities in a Gd host. The calculations have been performed within the density functional theory using the full potential linearized augmented plane wave technique and the GGA+U method. The spin and orbital contributions to the magnetic moment and the hyperfine fields have been computed. We find large magnetic moments for 3d (Ti–Co), 4d (Nb–Ru) and 5d (Ta–Os) impurities with magnitudes significantly different from the values estimated from earlier mean field calculation [J. Magn. Magn. Mater. 320 (2008) e446–e449]. The exchange interaction between the impurity and host Gd moments is found to be positive for early 3d elements (Sc–V) while in all other cases an anti-ferromagnetic coupling is observed. The trends for the magnetic moment and hyperfine field of d-impurities in Gd show qualitative difference with respect to their behavior in Fe, Co and Ni. The calculated total hyperfine field, in most cases, shows excellent agreement with the experimental results. A detailed analysis of the Fermi contact hyperfine field has been made, revealing striking differences for impurities having less or more than half filled d-shell. The impurity induced perturbations in host moments and the change in the global magnetization of the unit cell have also been computed. The variation within each of the d-series is found to correlate with the d–d hybridization strength between the impurity and host atoms. - Highlights: • Detailed study of transition metal impurities in ferromagnetic Gd has been carried out. • The trends in impurity magnetic moment are qualitatively different from Fe, Co and Ni. • The variation within each of the d-series is found to correlate with the d–d hybridization strength between the impurity and host atoms. • Experimental trend in a hyperfine field has been reproduced successfully

  16. Effects of Cr and Fe co-doping on structural, optical, electrical and magnetic properties of titanium dioxide (TiO2

    Directory of Open Access Journals (Sweden)

    Waseem Salma

    2015-09-01

    Full Text Available A series of Ti0.9Fe0.1-xCrxO2 (where x = 0.0, 0.02, 0.04, 0.6, 0.08, 0.10 was synthesized using the powder metallurgy route. The structural, morphological, magnetic, optical and electrical properties were investigated by X-ray diffractometry (XRD, Raman spectroscopy, scanning electron microscopy (SEM, vibrating sample magnetometry (VSM, UV-Vis spec­troscopy and four probe technique, respectively. The rutile phase was confirmed by XRD analysis which was also verified by Raman spectroscopy. It was observed that the grain size increased as the concentration of Cr increased. M-H loops ex­tracted from VSM analysis revealed anti-ferromagnetic, weak ferromagnetic and paramagnetic behaviors at room temperature. The band gap energy and resistivity measurements exhibited the semiconducting nature of Ti0.9Fe0.1-xCrxO2 based diluted magnetic semiconductors.

  17. Different approaches to analyze the dipolar interaction effects on diluted and concentrated granular superparamagnetic systems

    Energy Technology Data Exchange (ETDEWEB)

    Moscoso-Londoño, O., E-mail: omoscoso@ifi.unicamp.br [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), CEP13083-859 Campinas, São Paulo (Brazil); Tancredi, P. [Laboratorio de Sólidos Amorfos, INTECIN, Facultad de Ingeniería, Universidad de Buenos Aires (UBA), CONICET, C1063ACV Buenos Aires (Argentina); Muraca, D. [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), CEP13083-859 Campinas, São Paulo (Brazil); Centro de Ciencias Naturais e Humanas, Universidade Federal do ABC (UFABC), Av. Dos Estados, 5001, Santo André, SP (Brazil); Mendoza Zélis, P.; Coral, D.; Fernández van Raap, M.B. [Instituto de Física, Universidad Nacional de La Plata (UNLP), CONICET, CC.67, 1900 La Plata, Buenos Aires (Argentina); Wolff, U.; Neu, V.; Damm, C. [IFW Dresden, Leibniz Institute for Solid State and Materials Research, Dresden, Helmholtzstrasse 20, 01069 Dresden (Germany); Oliveira, C.L.P. de [Instituto de Física, Universidade de São Paulo, São Paulo 05314970 (Brazil); Pirota, K.R. [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), CEP13083-859 Campinas, São Paulo (Brazil); and others

    2017-04-15

    Controlled magnetic granular materials with different concentrations of magnetite nanoparticles immersed in a non-conducting polymer matrix were synthesized and, their macroscopic magnetic observables analyzed in order to advance towards a better understanding of the magnetic dipolar interactions and its effects on the obtained magnetic parameters. First, by means of X-ray diffraction, transmission electron microscopy, small angle X-ray scattering and X-ray absorption fine structure an accurate study of the structural properties was carried out. Then, the magnetic properties were analyzed by means of different models, including those that consider the magnetic interactions through long-range dipolar forces as: the Interacting Superparamagnetic Model (ISP) and the Vogel-Fulcher law (V-F). In systems with larger nanoparticle concentrations, magnetic results clearly indicate that the role played by the dipolar interactions affects the magnetic properties, giving rise to obtaining magnetic and structural parameters without physical meaning. Magnetic parameters as the effective anisotropic constant, magnetic moment relaxation time and mean blocking temperature, extracted from the application of the ISP model and V-F Law, were used to simulate the zero-field-cooling (ZFC) and field-cooling curves (FC). A comparative analysis of the simulated, fitted and experimental ZFC/FC curves suggests that the current models depict indeed our dilute granular systems. Notwithstanding, for concentrated samples, the ISP model infers that clustered nanoparticles are being interpreted as single entities of larger magnetic moment and volume, effect that is apparently related to a collective and complex magnetic moment dynamics within the cluster. - Highlights: • Nanoparticle architecture into matrices determines the composite magnetic response. • Magnetically diluted or compacted systems are useful to study magnetism at nanoscale. • Particle aggregation into the matrices was examined

  18. Dynamical Properties of a Diluted Dipolar-Interaction Heisenberg Spin Glass

    International Nuclear Information System (INIS)

    Zhang Kai-Cheng; Liu Yong; Chi Feng

    2014-01-01

    Up to now the chirality is seldom studied in the diluted spin glass although many investigations have been performed on the site-ordered Edwards—Anderson model. By simulation, we investigate the dynamical properties of both the spin-glass and the chiral-glass phases in a diluted dipolar system, which was manifested to have a spin-glass transition by recent numerical study. By scaling we find that both phases have the same aging behavior and closer aging parameter μ. Similarly, the domains grow in the same way and both phases have a closer barrier exponent Ψ. It means that both the spins and the chirality have the same dynamical properties and they may freeze at the same temperature. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Optical constants correlated electrons-spin of micro doughnuts of Mn-doped ZnO films

    CSIR Research Space (South Africa)

    Nkosi, SS

    2013-09-01

    Full Text Available Diluted magnetic semiconductor (DMS) Mn:ZnO thin films with “ring-like or doughnut-like” structures were grown using aerosol spray pyrolysis for 20 and 30 min. Electron paramagnetic resonance revealed the ferromagnetic ordering which varies with Mn...

  20. A first-principles study of light non-metallic atom substituted blue phosphorene

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Minglei [School of Mechanical Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Tang, Wencheng, E-mail: 101000185@seu.edu.cn [School of Mechanical Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Ren, Qingqiang [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, Hunan (China); Wang, Sa-ke [Department of Physics, Southeast University, Nanjing 210096, Jiangsu (China); Yu, Jin [School of Materials Science and Engineering, Southeast University, Nanjing 211189, Jiangsu (China); Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, Jiangsu (China); Du, Yanhui [School of Mechanical Engineering, Southeast University, Nanjing 211189, Jiangsu (China)

    2015-11-30

    Graphical abstract: - Highlights: • All the impurities are covalently bonded to blue phosphorene (with a single vacancy). • All the substituted systems are semiconductors. • B-substituted system exhibits direct bandgap semiconductor behavior. • The band gaps with spin polarization are found in C and O-substituted systems. • Our works can paves a new route at nanoscale for novel functionalities of optical and spintronics devices. - Abstract: First-principles calculations are implemented to study the geometric, electronic and magnetic properties of light non-metallic atom (B, C, N, O and F) substituted blue phosphorene. All the substituted systems are highly stable. The B-substituted system is a direct bandgap semiconductor with a bandgap size about 1.5 eV. The C, O-substituted systems are promising systems to explore two-dimensional diluted magnetic semiconductors. Magnetism is observed for C and O substitution, while for the other impurities no magnetic moment is detected. Our works paves a new route at nanoscale for novel functionalities of optical and spintronics devices.

  1. Decoherence of spin states induced by Rashba coupling for an electron confined to a semiconductor quantum dot in the presence of a magnetic field

    Science.gov (United States)

    Poszwa, A.

    2018-05-01

    We investigate quantum decoherence of spin states caused by Rashba spin-orbit (SO) coupling for an electron confined to a planar quantum dot (QD) in the presence of a magnetic field (B). The Schrödinger equation has been solved in a frame of second-order perturbation theory. The relationship between the von Neumann (vN) entropy and the spin polarization is obtained. The relation is explicitly demonstrated for the InSb semiconductor QD.

  2. Transport coefficients and orientational distributions of dilute colloidal dispersions composed of hematite particles (for an external magnetic field parallel to the angular velocity vector of simple shear flow)

    International Nuclear Information System (INIS)

    Satoh, Akira; Hayasaka, Ryo; Majima, Tamotsu

    2008-01-01

    We have treated a dilute dispersion composed of ferromagnetic rodlike particles with a magnetic moment normal to the particle axis, such as hematites, to investigate the influences of the magnetic field strength, shear rate, and random forces on the orientational distribution of rodlike particles and also on transport coefficients, such as viscosity and diffusion coefficient. In the present analysis, these rodlike particles are assumed to conduct the rotational Brownian motion in a simple shear flow as well as an external magnetic field. The results obtained here are summarized as follows. In the case of a strong magnetic field and a smaller shear rate, the rodlike particle can freely rotate in the xy-plane with the magnetic moment continuing to point the magnetic field direction. On the other hand, for a strong shear flow, the particle has a tendency to incline in the flow direction with the magnetic moment pointing to the magnetic field direction. In the case of the magnetic field applied normal to the direction of the sedimentation, the diffusion coefficient gives rise to smaller values than expected, since the rodlike particle sediments with the particle axis inclining toward directions normal to the movement direction and, of course, toward the direction along that direction

  3. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    Energy Technology Data Exchange (ETDEWEB)

    Sachleben, Joseph Robert [Lawrence Berkeley Lab., CA (United States); California Univ., Berkeley, CA (United States). Dept. of Chemistry

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and 13C enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution 1H and 13C liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 Å. Internal motion is estimated to be slow with a correlation time > 10-8 s-1. The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring 14N-1H J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T1 and T2 experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in 13C enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  4. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  5. Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt

    International Nuclear Information System (INIS)

    Pandey, R.K.

    2008-01-01

    The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: (1) wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; (2) n-type semiconductors; (3) they exhibit well defined magnetic hysteresis loops and (4) their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A and M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of

  6. Ferromagnetic semiconductor-metal transition in europium monoxide

    International Nuclear Information System (INIS)

    Arnold, M.

    2007-10-01

    We present a microscopical model to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The physical properties of the model are systematically studied, whereas the main remark is on the interplay between magnetic order and the transport properties. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, obtained for EuO 1-x or Gd-doped Gd x Eu 1-x 0. In particular the doping dependence of the Curie temperature is reproduced The existence of correlation-induced local moments on the impurity sites is essential for this description. (orig.)

  7. Point defects in dilute nitride III-N-As and III-N-P

    International Nuclear Information System (INIS)

    Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

    2006-01-01

    We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As Ga antisites and Ga i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides

  8. Nuclear magnetic resonance of randomly diluted magnetic materials; Ressonancia nuclear magnetica em materiais magneticos diluidos aleatoriamente

    Energy Technology Data Exchange (ETDEWEB)

    Magon, C J

    1986-12-31

    The temperature dependence of the nuclear relaxation rates and line shapes of the F{sub O} resonance in the diluted antiferromagnet Fe{sub x} Zn{sub 1-x} F{sub 2} and Mn{sub x} Zn{sub 1-x} F{sub 2} are studied over a large temperature range T{sub N} < {approx} T {<=} 300 K. The high (room) temperature spin-lattice relaxation rates (1/T{sub 1}) of the F{sub O} nuclei, which are not transfer hyperfine coupled to the Fe (or Mn) spins, have been measured and calculated as a function of the concentration x. Good agreement with experiment is found for the theoretical results, which have been obtained in the range 0.1 {<=} x {<=} 0.8. The temperature dependence of 1/T{sub 1} for T{sub N}magnetization. (author).

  9. A scanning tunneling microscope for a dilution refrigerator.

    Science.gov (United States)

    Marz, M; Goll, G; Löhneysen, H v

    2010-04-01

    We present the main features of a home-built scanning tunneling microscope that has been attached to the mixing chamber of a dilution refrigerator. It allows scanning tunneling microscopy and spectroscopy measurements down to the base temperature of the cryostat, T approximately 30 mK, and in applied magnetic fields up to 13 T. The topography of both highly ordered pyrolytic graphite and the dichalcogenide superconductor NbSe(2) has been imaged with atomic resolution down to T approximately 50 mK as determined from a resistance thermometer adjacent to the sample. As a test for a successful operation in magnetic fields, the flux-line lattice of superconducting NbSe(2) in low magnetic fields has been studied. The lattice constant of the Abrikosov lattice shows the expected field dependence proportional to 1/square root of B and measurements in the scanning tunneling spectroscopy mode clearly show the superconductive density of states with Andreev bound states in the vortex core.

  10. Quenched bond-dilute Ising ferromagnet in square lattice: thermodynamical properties

    International Nuclear Information System (INIS)

    Honmura, R.; Sarmento, E.F.; Tsallis, C.

    1982-01-01

    Within an effective field framework which improves the Molecular Field Approximation, the phase diagram, magnetization, specific heat and susceptibility associated with the quenched bond-dilute Ising ferromagnet in square lattice is calculated. The results are qualitatively (and within certain extent quantitatively) satisfactory; in particular the effects, on the specific heat and susceptibility, of the (eventually) coexisting finite and infinite clusters are exhibited. (Author) [pt

  11. Tunable omnidirectional absorber and mode splitter based on semiconductor photonic crystal

    International Nuclear Information System (INIS)

    Ding, Guo-Wen; Liu, Shao-Bin; Zhang, Hai-Feng; Kong, Xiang-Kun; Li, Hai-Ming

    2015-01-01

    In this paper, the properties of one-dimensional (1D) photonic crystals (PCs) composed of the semiconductor (GaAs) and dielectric layers are theoretically investigated by the transfer matrix method (TMM). The absorption of semiconductor layers is investigated theoretically. Due to the magneto-optical Voigt effect, the dielectric constant of the semiconductor is modified differently in different modes and frequency ranges. If the frequency range of the incident wave is larger than the plasma frequency, TE and TM modes of the incident wave will be absorbed in a wide incident angle. TM wave will be absorbed but TE wave will be reflected while the frequency range is less than the plasma frequency. The absorption of semiconductor can also be tuned by varying the external magnetic field. The proposed PCs have a reconfigurable application to design a tunable omnidirectional absorber and mode splitter at same time

  12. Electronic structures and valence band splittings of transition metals doped GaNs

    International Nuclear Information System (INIS)

    Lee, Seung-Cheol; Lee, Kwang-Ryeol; Lee, Kyu-Hwan

    2007-01-01

    For a practical viewpoint, presence of spin splitting of valence band in host semiconductors by the doping of transition metal (TM) ions is an essential property when designing a diluted magnetic semiconductors (DMS) material. The first principle calculations were performed on the electronic and magnetic structure of 3d transition metal doped GaN. V, Cr, and Mn doped GaNs could not be candidates for DMS materials since most of their magnetic moments is concentrated on the TM ions and the splittings of valence band were negligible. In the cases of Fe, Co, Ni, and Cu doped GaNs, on the contrary, long-ranged spin splitting of valence band was found, which could be candidates for DMS materials

  13. Ferromagnetism in with Fe implanted GaN and TiO{sub 2}; Ferromagnetismus in mit Fe implantierten GaN und TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Talut, Georg

    2009-12-15

    In the present study it was tried to create a diluted magnetic semiconductor on the basis of GaN and TiO{sub 2} by means of ion beam implantation. In most cases, by characterization of structural and magnetic properties, it was possible to prove that the ferromagnetic state is related to either spinodal decomposition or secondary phase formation. In case of Fe implanted GaN spinodal decomposition, epitaxially oriented {alpha}-Fe or {epsilon}-Fe{sub 3}N nanocrystals were found to be responsible for the ferromagnetic behavior. In addition, the formation of {gamma}-Fe clusters was observed. Similarly, in TiO{sub 2} the ferromagnetism is related to the formation of epitaxially oriented {alpha}-Fe clusters. Dependent on the process parameters during annealing experiments several various secondary phases were formed. A critical examination of the references in literature points out the significance of usage of sensitive and complementary probe techniques (like CEMS, SQUID, XRD, EXAFS), in order to be able to discuss the origin of ferromagnetism in the field of diluted magnetic semiconductors in a proper way. (orig.)

  14. Tailoring magnetic nanoparticle for transformers application.

    Science.gov (United States)

    Morais, P C; Silva, A S; Leite, E S; Garg, V K; Oliveira, A C; Viali, W R; Sartoratto, P P C

    2010-02-01

    In this study photoacoustic spectroscopy was used to investigate the effect of dilution of an oil-based magnetic fluid sample on the magnetic nanoparticle surface-coating. Changes of the photoacoustic signal intensity on the band-L region (640 to 830 nm) upon dilution of the stock magnetic fluid sample were discussed in terms of molecular surface desorption. The model proposed here assumes that the driving force taking the molecules out from the nanoparticle surface into the bulk solvent is the gradient of osmotic pressure. This gradient of osmotic pressure is established between the nanoparticle surface and the bulk suspension. It is further assumed that the photoacoustic signal intensity (area under the photoacoustic spectra) scales linearly with the number of coating molecules (surface grafting) at the nanoparticle surface. This model picture provides a non-linear analytical description for the reduction of the surface grafting coefficient upon dilution, which was successfully-used to curve-fit the photoacoustic experimental data.

  15. Capsize of polarization in dilute photonic crystals.

    Science.gov (United States)

    Gevorkian, Zhyrair; Hakhoumian, Arsen; Gasparian, Vladimir; Cuevas, Emilio

    2017-11-29

    We investigate, experimentally and theoretically, polarization rotation effects in dilute photonic crystals with transverse permittivity inhomogeneity perpendicular to the traveling direction of waves. A capsize, namely a drastic change of polarization to the perpendicular direction is observed in a one-dimensional photonic crystal in the frequency range 10 ÷ 140 GHz. To gain more insights into the rotational mechanism, we have developed a theoretical model of dilute photonic crystal, based on Maxwell's equations with a spatially dependent two dimensional inhomogeneous dielectric permittivity. We show that the polarization's rotation can be explained by an optical splitting parameter appearing naturally in Maxwell's equations for magnetic or electric fields components. This parameter is an optical analogous of Rashba like spin-orbit interaction parameter present in quantum waves, introduces a correction to the band structure of the two-dimensional Bloch states, creates the dynamical phase shift between the waves propagating in the orthogonal directions and finally leads to capsizing of the initial polarization. Excellent agreement between theory and experiment is found.

  16. Multiterminal semiconductor/ferromagnet probes for spin-filter scanning tunneling microscopy

    NARCIS (Netherlands)

    Vera Marun, I.J.; Jansen, R.

    2009-01-01

    We describe the fabrication of multiterminal semiconductor/ferromagnet probes for a new technique to study magnetic nanostructures: spin-filter scanning tunneling microscopy. We describe the principle of the technique, which is based on spin-polarized tunneling and subsequent analysis of the spin

  17. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    International Nuclear Information System (INIS)

    Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2016-01-01

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  18. Molecular analysis of two mouse dilute locus deletion mutations: Spontaneous dilute lethal20J and radiation-induced dilute prenatal lethal Aa2 alleles

    International Nuclear Information System (INIS)

    Strobel, M.C.; Seperack, P.K.; Copeland, N.G.; Jenkins, N.A.

    1990-01-01

    The dilute (d) coat color locus of mouse chromosome 9 has been identified by more than 200 spontaneous and mutagen-induced recessive mutations. With the advent of molecular probes for this locus, the molecular lesion associated with different dilute alleles can be recognized and precisely defined. In this study, two dilute mutations, dilute-lethal20J (dl20J) and dilute prenatal lethal Aa2, have been examined. Using a dilute locus genomic probe in Southern blot analysis, we detected unique restriction fragments in dl20J and Aa2 DNA. Subsequent analysis of these fragments showed that they represented deletion breakpoint fusion fragments. DNA sequence analysis of each mutation-associated deletion breakpoint fusion fragment suggests that both genomic deletions were generated by nonhomologous recombination events. The spontaneous dl20J mutation is caused by an interstitial deletion that removes a single coding exon of the dilute gene. The correlation between this discrete deletion and the expression of all dilute-associated phenotypes in dl20J homozygotes defines the dl20J mutation as a functional null allele of the dilute gene. The radiation-induced Aa2 allele is a multilocus deletion that, by complementation analysis, affects both the dilute locus and the proximal prenatal lethal-3 (pl-3) functional unit. Molecular analysis of the Aa2 deletion breakpoint fusion fragment has provided access to a previously undefined gene proximal to d. Initial characterization of this new gene suggests that it may represent the genetically defined pl-3 functional unit

  19. Faraday effect in Cd1-xMnxTe semimagnetic semiconductor

    International Nuclear Information System (INIS)

    Vatamanyuk, P.P.; Savitskij, A.V.; Savchuk, A.I.; Ul'yanitskij, K.S.

    1988-01-01

    The Faraday effect is investigated in the semimagnetic semiconductor Cd 1-x Mn x Te (0≥x≤0.3) in the spectral range from 0.6 to 1.8 eV at temperatures between 4.2 and 350 K and in magnetic fields up to 250 kOe. Some peculiarities in the dispersion of the Faraday rotation (FR) are observed which are connected with a change in the direction of rotation depending on the composition and temperature. The results are analyzed by assuming the FR to consist of three components: an interband, exciton and intracentral contribution. The deviation of FR from saturation in strong magnetic fields is interpreted within the framework of antiferromagnetic exchange interaction between the Mn 2+ ions. On the basis of an analysis of the FR temperature dependence it is suggested that the spontaneous Faraday effect is characteristic of semimagnetic semiconductors in spin glass phase

  20. Modulating the electronic and magnetic properties of bilayer borophene via transition metal atoms intercalation: from metal to half metal and semiconductor.

    Science.gov (United States)

    Zhang, Xiuyun; Sun, Yi; Ma, Liang; Zhao, Xinli; Yao, Xiaojing

    2018-07-27

    Borophene, a two-dimensional monolayer made of boron atoms, has attracted wide attention due to its appealing properties. Great efforts have been devoted to fine tuning its electronic and magnetic properties for desired applications. Herein, we theoretically investigate the versatile electronic and magnetic properties of bilayer borophene (BLB) intercalated by 3d transition metal (TM) atoms, TM@BLBs (TM = Ti-Fe), using ab initio calculations. Four allotropes of AA-stacking (α 1 -, β-, β 12 - and χ 3 -) BLBs with different intercalation concentrations of TM atoms are considered. Our results show that the TM atoms are strongly bonded to the borophene layers with fairly large binding energies, around 6.31 ∼ 15.44 eV per TM atom. The BLBs with Cr and Mn intercalation have robust ferromagnetism, while for the systems decorated with Fe atoms, fruitful magnetic properties, such as nonmagnetic, ferromagnetic or antiferromagnetic, are identified. In particular, the α 1 - and β-BLBs intercalated by Mn or Fe atom can be transformed into a semiconductor, half metal or graphene-like semimetal. Moreover, some heavily doped TM@BLBs expose high Curie temperatures above room temperature. The attractive properties of TM@BLBs entail an efficient way to modulate the electronic and magnetic properties of borophene sheets for advanced applications.

  1. The importance of Fe interface states for ferromagnet-semiconductor based spintronic devices

    Science.gov (United States)

    Chantis, Athanasios

    2009-03-01

    I present our recent theoretical studies of the bias-controlled spin injection, detection sensitivity and tunneling anisotropic magnetoresistance in ferromagnetic-semiconductor tunnel junctions. Using first-principles electron transport methods we have shown that Fe 3d minority-spin surface (interface) states are responsible for at least two important effects for spin electronics. First, they can produce a sizable Tunneling Anisotropic Magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, Tunneling Magnetoresistance junctions with a single ferromagnetic electrode that can function at room temperatures. Second, in Fe/GaAs(001) magnetic tunnel junctions they produce a strong dependence of the tunneling current spin-polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is found. This explains the observed sign reversal of spin-polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistcance through vertical Fe/GaAs/Fe trilayers. We also present a theoretical description of electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin-polarization. We show that in realistic ferromagnet/semiconductor junctions this bias dependence can originate from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin-polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Our numerical results show that the magnitude of the voltage signal

  2. Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor

    Science.gov (United States)

    Bui, Cong Tinh; Garcia, Christina A. C.; Tu, Nguyen Thanh; Tanaka, Masaaki; Hai, Pham Nam

    2018-05-01

    Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.

  3. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  4. Hybridizing pines with diluted pollen

    Science.gov (United States)

    Robert Z. Callaham

    1967-01-01

    Diluted pollens would have many uses by the tree breeder. Dilutions would be particularly advantageous in making many controlled pollinations with a limited amount of pollen. They also would be useful in artificial mass pollinations of orchards or single trees. Diluted pollens might help overcome troublesome genetic barriers to crossing. Feasibility o,f using diluted...

  5. Polaritons dispersion in a composite ferrite-semiconductor structure near gyrotropic-nihility state

    Energy Technology Data Exchange (ETDEWEB)

    Tuz, Vladimir R., E-mail: tvr@rian.kharkov.ua

    2016-12-01

    In the context of polaritons in a ferrite-semiconductor structure which is influenced by an external static magnetic field, the gyrotropic-nihility can be identified from the dispersion equation related to bulk polaritons as a particular extreme state, at which the longitudinal component of the corresponding constitutive tensor and bulk constant simultaneously acquire zero. Near the frequency of the gyrotropic-nihility state, the conditions of branches merging of bulk polaritons, as well as an anomalous dispersion of bulk and surface polaritons are found and discussed. - Highlights: • Gyrotropic-nihility state is identified from the dispersion equation related to bulk polaritons in a magnetic-semiconductor superlattice. • The conditions of branches merging of bulk polaritons are found. • An anomalous dispersion of bulk and surface polaritons is found and discussed.

  6. Polaritons dispersion in a composite ferrite-semiconductor structure near gyrotropic-nihility state

    International Nuclear Information System (INIS)

    Tuz, Vladimir R.

    2016-01-01

    In the context of polaritons in a ferrite-semiconductor structure which is influenced by an external static magnetic field, the gyrotropic-nihility can be identified from the dispersion equation related to bulk polaritons as a particular extreme state, at which the longitudinal component of the corresponding constitutive tensor and bulk constant simultaneously acquire zero. Near the frequency of the gyrotropic-nihility state, the conditions of branches merging of bulk polaritons, as well as an anomalous dispersion of bulk and surface polaritons are found and discussed. - Highlights: • Gyrotropic-nihility state is identified from the dispersion equation related to bulk polaritons in a magnetic-semiconductor superlattice. • The conditions of branches merging of bulk polaritons are found. • An anomalous dispersion of bulk and surface polaritons is found and discussed.

  7. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  8. Antiferromagnetic phase of the gapless semiconductor V3Al

    Science.gov (United States)

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D.; Lewis, L. H.; Saúl, A. A.; Radtke, G.; Heiman, D.

    2015-03-01

    Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The AF gapless semiconducting D 03 phase of V3Al was successfully synthesized via arc-melting and annealing. The AF properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-thirds of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction, and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing AF elements.

  9. Ferromagnetic semiconductor-metal transition in europium monoxide

    Energy Technology Data Exchange (ETDEWEB)

    Arnold, M.

    2007-10-15

    We present a microscopical model to describe the simultaneous para-to-ferromagnetic and semiconductor-to-metal transition in electron-doped EuO. The physical properties of the model are systematically studied, whereas the main remark is on the interplay between magnetic order and the transport properties. The theory correctly describes detailed experimental features of the conductivity and of the magnetization, obtained for EuO{sub 1-x} or Gd-doped Gd{sub x}Eu{sub 1-x}0. In particular the doping dependence of the Curie temperature is reproduced The existence of correlation-induced local moments on the impurity sites is essential for this description. (orig.)

  10. Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Sinova, J.; Wang, K. Y.; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Foxon, C. T.; Niu, Q.; MacDonald, A. H.

    2003-01-01

    Roč. 83, č. 2 (2003), s. 320-322 ISSN 0003-6951 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * dc transport properties * (Ga, Mn)As Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.049, year: 2003

  11. Magnetism at the Interface of Magnetic Oxide and Nonmagnetic Semiconductor Quantum Dots.

    Science.gov (United States)

    Saha, Avijit; Viswanatha, Ranjani

    2017-03-28

    Engineering interfaces specifically in quantum dot (QD) heterostructures provide several prospects for developing multifunctional building block materials. Precise control over internal structure by chemical synthesis offers a combination of different properties in QDs and allows us to study their fundamental properties, depending on their structure. Herein, we studied the interface of magnetic/nonmagnetic Fe 3 O 4 /CdS QD heterostructures. In this work, we demonstrate the decrease in the size of the magnetic core due to annealing at high temperature by the decrease in saturation magnetization and blocking temperature. Furthermore, surprisingly, in a prominently optically active and magnetically inactive material such as CdS, we observe the presence of substantial exchange bias in spite of the nonmagnetic nature of CdS QDs. The presence of exchange bias was proven by the increase in magnetic anisotropy as well as the presence of exchange bias field (H E ) during the field-cooled magnetic measurements. This exchange coupling was eventually traced to the in situ formation of a thin antiferromagnetic FeS layer at the interface. This is verified by the study of Fe local structure using X-ray absorption fine structure spectroscopy, demonstrating the importance of interface engineering in QDs.

  12. Physicochemical and Electrophysical Properties of Metal/Semiconductor Containing Nanostructured Composites

    Science.gov (United States)

    Gerasimov, G. N.; Gromov, V. F.; Trakhtenberg, L. I.

    2018-06-01

    The properties of nanostructured composites based on metal oxides and metal-polymer materials are analyzed, along with ways of preparing them. The effect the interaction between metal and semiconductor nanoparticles has on the conductivity, photoconductivity, catalytic activity, and magnetic, dielectric, and sensor properties of nanocomposites is discussed. It is shown that as a result of this interaction, a material can acquire properties that do not exist in systems of isolated particles. The transfer of electrons between metal particles of different sizes in polymeric matrices leads to specific dielectric losses, and to an increase in the rate and a change in the direction of chemical reactions catalyzed by these particles. The interaction between metal-oxide semiconductor particles results in the electronic and chemical sensitization of sensor effects in nanostructured composite materials. Studies on creating molecular machines (Brownian motors), devices for magnetic recording of information, and high-temperature superconductors based on nanostructured systems are reviewed.

  13. New antiferromagnetic semiconductor CuCr1.5Sb0.5S4

    International Nuclear Information System (INIS)

    Kesler, Ya.A.; Koroleva, L.I.; Mikheev, M.G.; Odintsov, A.G.; Filimonov, D.S.

    1993-01-01

    New halcogenide compound with spinel-antiferromagnetic semiconductor CuCr 1.5 Sb 0.5 S 4 are obtained and studied for the first time. Magnetic properties of this compound, namely, magnetization linear dependence, maximum on PHI(T) curve in the low-temperature area and realization of the Curie-Weis law for paramagnetic susceptibility with negative paramagnetic temperature testiby to the fact that this compound is antiferromagnetic

  14. Controlled growth of porous networks in phosphide semiconductors

    Czech Academy of Sciences Publication Activity Database

    Delimitis, A.; Komninou, Ph.; Kehagias, Th.; Pavlidou, E.; Karakostas, Th.; Gladkov, Petar; Nohavica, Dušan

    2008-01-01

    Roč. 15, č. 1 (2008), s. 75-81 ISSN 1380-2224 R&D Projects: GA ČR(CZ) GA202/06/1315; GA MŠk(CZ) ME 697 Institutional research plan: CEZ:AV0Z20670512 Keywords : porous semiconductors * electrochmical analysis * transmission electron microscopy * scanning electron microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.959, year: 2008

  15. SÍNTESIS, CARACTERIZACIÓN ESTRUCTURAL Y PROPIEDADES MAGNÉTICAS DE COMPUESTOS SEMICONDUCTORES DEL TIPO Dy (x In (1-x Sb ISYNTHESIS, STRUCTURAL CHARACTERIZATION AND MAGNETIC PROPERTIES OF SEMICONDUCTOR COMPOUNDS OF TYPE Dy x In (1-x S

    Directory of Open Access Journals (Sweden)

    Euclides J. Velazco Rivero

    2018-04-01

    Full Text Available Semiconductor compounds of molecular formula of type DyxIn (1-x Sb (x = 0,02; 0,03; 0,04; 0,05; 0,06 y 0,07 were synthesized by means of direct interaction of the elements under heat treatment to 550°C during 11 days in vacuum sealed quartz ampoules. The analyses by X-rays diffraction showed that the compounds with x = 0,02; 0,03 y 0,04 presented pure phases of InSb doped with Dy without presence of alternate phases of DySb. These compounds, analyzed by scanning electronic microscopy – SEM, showed particles with a variety of shapes and sizes each one. Whereas the magnetic susceptibility measurements showed that those doped compounds, in spite of their paramagnetic behavior, the predominant magnetic interaction is ferromagnetic due to their positive Curie temperature (θ

  16. States of atoms and interatomic interactions in complex perovskite-like oxides. Communication XXIII. Magnetic dilution in the La(Sr)NiO3-LaGaO3

    International Nuclear Information System (INIS)

    Chezhina, N.V.; Bodritskaya, Eh.V.; Zhuk, N.A.

    2008-01-01

    Magnetic susceptibility of dilute solid solutions of lanthanum gallates doped with nickel and also with nickel and strontium was studied. Calculations showed that the main contribution into the exchange interactions in gallates doped with nickel is made by dimers formed by low-spin nickel(III) (J -20 cm -1 ), and in gallates doped with strontium and nickel the main contribution is due to dimers formed by high-and low-spin nickel (J 10 cm -1 ). Electrical conductivity measurements showed that the samples under study are electron and ion conductors [ru

  17. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  18. Single-molecule magnets ``without'' intermolecular interactions

    Science.gov (United States)

    Wernsdorfer, W.; Vergnani, L.; Rodriguez-Douton, M. J.; Cornia, A.; Neugebauer, P.; Barra, A. L.; Sorace, L.; Sessoli, R.

    2012-02-01

    Intermolecular magnetic interactions (dipole-dipole and exchange) affect strongly the magnetic relaxation of crystals of single-molecule magnets (SMMs), especially at low temperature, where quantum tunneling of the magnetization (QTM) dominates. This leads to complex many-body problems [l]. Measurements on magnetically diluted samples are desirable to clearly sort out the behaviour of magnetically-isolated SMMs and to reveal, by comparison, the effect of intermolecular interactions. Here, we diluted a Fe4 SMM into a diamagnetic crystal lattice, affording arrays of independent and iso-oriented magnetic units. We found that the resonant tunnel transitions are much sharper, the tunneling efficiency changes significantly, and two-body QTM transitions disappear. These changes have been rationalized on the basis of a dipolar shuffling mechanism and of transverse dipolar fields, whose effect has been analyzed using a multispin model. Our findings directly prove the impact of intermolecular magnetic couplings on the SMM behaviour and disclose the magnetic response of truly-isolated giant spins in a diamagnetic crystalline environment.[4pt] [1] W. Wernsdorfer, at al, PRL 82, 3903 (1999); PRL 89, 197201 (2002); Nature 416, 406 (2002); IS Tupitsyn, PCE Stamp, NV Prokof'ev, PRB 69, 132406 (2004).

  19. High-field magnetization of dilute rare earths in yttrium

    DEFF Research Database (Denmark)

    Touborg, P.; Høg, J.; Cock, G. J.

    1974-01-01

    Magnetization measurements have been performed on single crystals of Y containing small amounts of Tb, Dy, or Er at 4.2 K in fields up to 295 × 105 A/m (370 kOe). Crystal-field and molecular-field parameters obtained from measurements of the initial susceptibility versus temperature give a satisf...... a satisfactory quantitative account of the high-field magnetization. This includes characteristic features due to the crossing and mixing of crystal-field levels....

  20. Magneto-optical transitions in multilayer semiconductor nanocrystals

    CERN Document Server

    Climente, J; Jaskolski, W; Aliaga, J I

    2003-01-01

    Absorption spectra of chemically synthesized uniform and multilayer semiconductor nanocrystals in a magnetic field are investigated theoretically. The nanocrystals are modelled by spherical barrier/well potentials. The electron states are calculated within the effective mass model. A four-band k centre dot p Hamiltonian, accounting for the valence subband mixing, is used to obtain the hole states. The magneto-optical transition spectrum depends strongly on the size and composition of the nanocrystals. In the case of small uniform quantum dots, only the linear Zeeman splitting of the electron and hole energy levels is observed even for very strong magnetic fields. In larger nanocrystals, the quadratic magnetic interaction turns out to be important and the transition spectrum becomes complicated. The most complicated influence of the magnetic field is found in quantum dot-quantum well systems in which the lowest electron and hole states are localized in a thin spherical layer. It is shown that transitions that ...

  1. Modulation of structural, electrical, and magnetic features with dilute Zr substitution in Bi0.8La0.2Fe1-xZrxO3 system

    Science.gov (United States)

    Usama, Hasan M.; Akter, Ayesha; Zubair, M. A.

    2017-12-01

    A significant structural modification and enhancement of the electrical and magnetic properties with dilute substitution of Zr (≤1 mol. %) in the Bi0.8La0.2Fe1-xZrxO3 system has been reported. A mixture of rhombohedral and orthorhombic phases was detected in these conventionally sintered ceramics. Transition from a leaky state to an insulating state was observed upon Zr substitution. This is the first time that a drop in the electrical conductivity as large as 6 orders of magnitude for doping as small as 0.25 mol. % in bismuth ferrite systems has been reported. An investigation on the nature of this abrupt transition revealed the dominant role of defects. A proper consideration of possible defect reactions taking place during and after sintering satisfactorily accounts for the observed modulation in the electrical properties. Both AC and DC measurements indicate that, before Zr substitution, p-type hopping conduction prevails with an activation energy as low as ˜0.57 eV, whereas the Zr substitution makes oxide ion migration the central mechanism for conduction with the activation energy of ˜0.96-1.08 eV. In contrast to that, the magnetic properties of the compounds experience a more subtle effect; a gradual modification of saturation magnetization and coercivity with Zr substitution is observed. Curve fitting of the magnetic hysteresis loops not only allowed extraction of three separate contributions from the magnetic response but also helped to explain the effects of Zr on the magnetic properties. Modifications of structural characteristics and magnetic anisotropy of the samples are believed to be the primary driving force behind the improvement in the magnetic properties.

  2. On the equivalence of dilute antiferromagnets and ferromagnets in random external fields: Curie-Weiss models

    International Nuclear Information System (INIS)

    Perez, J.F.; Pontin, L.F.; Segundo, J.A.B.

    1985-01-01

    Using a method proposed by van Hemmen the free energy of the Curie-Weiss version of the site-dilute antiferromagnetic Ising model is computed, in the presence of an uniform magnetic field. The solution displays an exact correspondence between this model and the Curie-Weiss version of the Ising model in the presence of a random magnetic field. The phase diagrams are discussed and a tricritical point is shown to exist. (Author) [pt

  3. Electronic structure of ferromagnetic semiconductor Ga1-xMnxAs probed by sub-gap magneto-optical spectroscopy

    OpenAIRE

    Acbas, G.; Kim, M. -H.; Cukr, M.; Novak, V.; Scarpulla, M. A.; Dubon, O. D.; Jungwirth, T.; Sinova, Jairo; Cerne, J.

    2009-01-01

    We employ Faraday and Kerr effect spectroscopy in the infrared range to investigate the electronic structure of Ga1-xMnxAs near the Fermi energy. The band structure of this archetypical dilute-moment ferromagnetic semiconductor has been a matter of controversy, fueled partly by previous measurements of the unpolarized infrared absorption and their phenomenological impurity-band interpretation. The infrared magneto-optical effects we study arise directly from the spin-splitting of the carrier ...

  4. Semirelativity in semiconductors: a review.

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-20

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures [Formula: see text] are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band [Formula: see text] description for NGS. The maximum electron velocity in NGS is [Formula: see text], which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In [Formula: see text] alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength [Formula: see text] is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that [Formula: see text] is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing energy. This conclusion is confirmed experimentally for NGS. Electrons

  5. Semirelativity in semiconductors: a review

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-01

    An analogy between behavior of electrons in narrow-gap semiconductors (NGS) and relativistic electrons in vacuum is reviewed. Energy band structures \\varepsilon ≤ft(\\mathbf{k}\\right) are considered for various NGS materials and their correspondence to the energy-momentum relation in special relativity is emphasized. It is indicated that special relativity for vacuum is analogous to a two-band \\mathbf{k}\\centerdot \\mathbf{p} description for NGS. The maximum electron velocity in NGS is u≃ 1× {{10}8}~\\text{cm}~{{\\text{s}}-1} , which corresponds to the light velocity in vacuum. An effective mass of charge carriers in semiconductors is introduced, relating their velocity to quasimomentum and it is shown that this mass depends on electron energy (or velocity) in a way similar to the mass of free relativistic electrons. In \\text{H}{{\\text{g}}1-x}\\text{C}{{\\text{d}}x}\\text{Te} alloys one can reach vanishing energy gap at which electrons and light holes become three-dimensional massless Dirac fermions. A wavelength {λz} is defined for NGS, in analogy to the Compton wavelength in relativistic quantum mechanics. It is estimated that {λz} is on the order of tens of Angstroms in typical semiconducting materials which is experimentally confirmed in tunneling experiments on energy dispersion in the forbidden gap. Statistical properties of the electron gas in NGS are calculated and their similarity is demonstrated to those of the Juttner gas of relativistic particles. Interband electron tunneling in NGS is described and shown to be in close analogy to the predicted but unobserved tunneling between negative and positive energies resulting from the Dirac equation for free electrons. It is demonstrated that the relativistic analogy holds for orbital and spin properties of electrons in the presence of an external magnetic field. In particular, it is shown that the spin magnetic moment of both NGS electrons and relativistic electrons approaches zero with increasing

  6. Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

    Science.gov (United States)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

    2014-08-01

    Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

  7. Curie temperature trends in (III, Mn)V ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; König, J.; Sinova, J.; Kučera, Jan; MacDonald, A. H.

    2002-01-01

    Roč. 66, č. 1 (2002), s. 012402-1-012402-4 ISSN 0163-1829 R&D Projects: GA MŠk OC P5.10; GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * Curie temperature Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  8. Anisotropic magnetoresistance in an antiferromagnetic semiconductor

    Czech Academy of Sciences Publication Activity Database

    Fina, I.; Martí, Xavier; Yi, D.; Liu, J.; Chu, J.-H.; Rayan-Serrao, C.; Suresha, S.; Shick, Alexander; Železný, Jakub; Jungwirth, Tomáš; Fontcuberta, J.; Ramesh, R.

    2014-01-01

    Roč. 5, SEP (2014), "4671-1"-"4671-7" ISSN 2041-1723 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G; GA ČR(CZ) GAP204/10/0330 EU Projects: European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional support: RVO:68378271 Keywords : antiferromagnets * semiconductors * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 11.470, year: 2014

  9. Investigation of magnetic interactions in sulfides by means of magnetic resonance

    International Nuclear Information System (INIS)

    Veen, G. van.

    1978-01-01

    Investigations have been designed to gather more information about magnetic pair interactions in sulfides by isomorphic substitution of the magnetic ions in suitable chosen diamagnetic host lattices and measurement of electron spin resonance of coupled pairs and of electron spin resonance or electron nuclear double resonance of the hyperfine interaction due to the nuclei of diamagnetic cations. The greater part of this thesis is devoted to preliminaries of magnetic resonance interpretation and sample selection and preparation. The measurements on the magnetically diluted compounds, which are described, only have an exploratory nature. (Auth.)

  10. Additional compound semiconductor nanowires for photonics

    Science.gov (United States)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  11. Magnetic surfactants as molecular based-magnets with spin glass-like properties

    International Nuclear Information System (INIS)

    Brown, Paul; Hatton, T Alan; Smith, Gregory N; Hernández, Eduardo Padrón; James, Craig; Eastoe, Julian; Nunes, Wallace C; Settens, Charles M; Baker, Peter J

    2016-01-01

    This paper reports the use of muon spin relaxation spectroscopy to study how the aggregation behavior of magnetic surfactants containing lanthanide counterions may be exploited to create spin glass-like materials. Surfactants provide a unique approach to building in randomness, frustration and competing interactions into magnetic materials without requiring a lattice of ordered magnetic species or intervening ligands and elements. We demonstrate that this magnetic behavior may also be manipulated via formation of micelles rather than simple dilution, as well as via design of surfactant molecular architecture. This somewhat unexpected result indicates the potential of using novel magnetic surfactants for the generation and tuning of molecular magnets. (paper)

  12. Origin and enhancement of spin polarized current in diluted magnetic oxides by oxygen vacancies

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Hsiung, E-mail: hchou@mail.nsysu.edu.tw; Yang, Kung-Shang; Tsao, Yao-Chung; Dwivedi, G. D.; Lin, Cheng-Pang [Department of Physics, National Sun Yat-Sen University, 70, Lienhai Road, Gushan District, Kaohsiung 804, Taiwan (China); Sun, Shih-Jye [Department of Applied Physics, National Kaohsiung University, 700, Gaoxiongdaxue Rd., Nanzi District, Kaohsiung 811, Taiwan (China); Lin, L. K.; Lee, S. F. [Institute of Physics, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 115, Taiwan (China)

    2016-04-04

    Spin polarized current (SPC) is a crucial characteristic of diluted magnetic oxides due to the potential application of oxides in spintronic devices. However, most research has been focused on ferromagnetic properties rather than polarization of electric current, because direct measurements are difficult and the origin of SPC has yet to be fully understood. The method to increase the SPC percentage is beyond practical consideration at present. To address this problem, we focus on the role of oxygen vacancies (V{sub O}) on SPC, which are controlled by growing the Co-doped ZnO thin-films at room temperature in a reducing atmosphere [Ar + (1%–30%)H{sub 2}]. We found that the conductivity increases with an increase of V{sub O} via two independent channels: the variable range hopping (VRH) within localized states and the itinerant transport in the conduction band. The point contact Andreev reflection measurements at 4.2 K, where the electric conduction is governed only by the VRH mechanism, prove that the current flowing in the VRH hopping channel is SPC. The percentage of SPC increases with the introduction of V{sub O} and increase in its concentration. The transport measurement shows that by manipulating V{sub O}, one can control the percentage of VRH hopping conduction such that it can even dominate room temperature conduction. The highest achieved SPC ratio at room temperature was 80%.

  13. Optical properties of low-dimensional materials

    CERN Document Server

    Ogawa, T

    1998-01-01

    This book surveys recent theoretical and experimental studies of optical properties of low-dimensional materials. As an extended version of Optical Properties of Low-Dimensional Materials (Volume 1, published in 1995 by World Scientific), Volume 2 covers a wide range of interesting low-dimensional materials including both inorganic and organic systems, such as disordered polymers, deformable molecular crystals, dilute magnetic semiconductors, SiGe/Si short-period superlattices, GaAs quantum wires, semiconductor microcavities, and photonic crystals. There are excellent review articles by promis

  14. Investigation of Structural, Magnetic, and Optical Properties of ZnO Codoped with Co and Cd

    Directory of Open Access Journals (Sweden)

    Lubna Mustafa

    2014-01-01

    Full Text Available Co and Cd have been codoped in ZnO using a simple solid state reaction technique to synthesize dilute magnetic oxide semiconductors of composition Zn0.9Co0.1−xCdxO (x = 0.0-0.1 with an increment of 0.02. Hexagonal wurtzite structure has been obtained for samples up to x = 0.06, using X-ray diffractometry. However, at x = 0.08 and 0.1, secondary peak of CdO is observed. Raman spectra of the samples have been obtained in 200–800 cm−1 range. UV-VIS spectrophotometer is used to study the optical properties, which shows that band gap energy decreases with the increase in Cd concentration. A weak ferromagnetic behavior was evident which decreased further by adding Cd in the series. Room temperature resistivity measurements performed using four-point probe technique showed that their values lie in the semiconductor range. Structural morphology of the samples has been investigated by a scanning electron microscope and grain size has been determined. Raman spectra and Fourier transform infrared spectroscopy revealed the successful incorporation of Co and Cd ions into the host ZnO lattice.

  15. Preparation of nanometer sized Mn doped Zn based oxides powder for DMS applications

    CSIR Research Space (South Africa)

    Das, J

    2009-01-01

    Full Text Available In order to study the size dependent DMS (Diluted Magnetic Semiconductor) behavior of Mn doped ZnO, the authors have systematically prepared a series of nanosized green powder based on Mn doped ZnO (Zn 1-x Mn x O, where x=0.02 - 0.1) materials using...

  16. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  17. Interband magneto-optical transitions in a layer of semiconductor nano-rings

    NARCIS (Netherlands)

    Voskoboynikov, O.; Wijers, Christianus M.J.; Liu, J.L.; Lee, C.P.

    2005-01-01

    We have developed a quantitative theory of the collective electromagnetic response of layers of semiconductor nano-rings. The response can be controlled by means of an applied magnetic field through the optical Aharonov-Bohm effect and is ultimately required for the design of composite materials. We

  18. Mesoscopic spin Hall effect in semiconductor nanostructures

    Science.gov (United States)

    Zarbo, Liviu

    The spin Hall effect (SHE) is a name given to a collection of diverse phenomena which share two principal features: (i) longitudinal electric current flowing through a paramagnetic semiconductor or metallic sample leads to transverse spin current and spin accumulation of opposite sign at opposing lateral edges; (ii) SHE does not require externally applied magnetic field or magnetic ordering in the equilibrium state of the sample, instead it relies on the presence of spin-orbit (SO) couplings within the sample. This thesis elaborates on a new type of phenomenon within the SHE family, predicted in our recent studies [Phys. Rev. B 72, 075361 (2005); Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 72, 075335 (2005); Phys. Rev. B 73 , 075303 (2006); and Europhys. Lett. 77, 47004 (2007)], where pure spin current flows through the transverse electrodes attached to a clean finitesize two-dimensional electron gas (2DEG) due to unpolarized charge current injected through its longitudinal leads. If transverse leads are removed, the effect manifests as nonequilibrium spin Hall accumulation at the lateral edges of 2DEG wires. The SO coupling driving this SHE effect is of the Rashba type, which arises due to structural inversion asymmetry of semiconductor heterostructure hosting the 2DEG. We term the effect "mesoscopic" because the spin Hall currents and accumulations reach optimal value in samples of the size of the spin precession length---the distance over which the spin of an electron precesses by an angle pi. In strongly SO-coupled structures this scale is of the order of ˜100 nm, and, therefore, mesoscopic in the sense of being much larger than the characteristic microscopic scales (such as the Fermi wavelength, screening length, or the mean free path in disordered systems), but still much smaller than the macroscopic ones. Although the first theoretical proposal for SHE, driven by asymmetry in SO-dependent scattering of spin-up and spin-down electrons off impurities

  19. High-field Faraday rotation in II-VI-based semimagnetic semiconductors

    NARCIS (Netherlands)

    Savchuk, AI; Fediv, [No Value; Nikitin, PI; Perrone, A; Tatzenko, OM; Platonov, VV

    The effects of d-d exchange interaction have been studied by measuring high-field Faraday rotation in II-VI-based semimagnetic semiconductors. For Cd1-xMnxTe crystals with x = 0.43 and at room temperature a saturation in magnetic field dependence of the Faraday rotation has been observed. In the

  20. Measurement of the torque on diluted ferrofluid samples in rotating magnetic fields

    International Nuclear Information System (INIS)

    Storozhenko, A.M.; Stannarius, R.; Tantsyura, A.O.; Shabanova, I.A.

    2017-01-01

    We study magnetic suspensions with different concentrations of ferromagnetic nanoparticles in a spherical container under the action of a rotating magnetic field. Experimental data on the concentration dependence of the rotational effect, viz. the torque exerted by the magnetic field, are presented. We explain the observed torque characteristics using a model that takes into account field-driven aggregation of the magnetic nanoparticles in stationary or slowly rotating fields. At sufficiently high rotation rates, the rotating magnetic field obviously destroys these aggregates, which results in a decreasing torque with increasing rotation frequency of the field. - Highlights: • The experimental study of the rotational effect in the magnetic fluids is presented. • The torque density non-monotonously depends on the magnetic field frequency. • Experimental data can be explained assuming aggregation of magnetic nanoparticles.