Carbon nanotube-chalcogenide composite

Czech Academy of Sciences Publication Activity Database

Stehlík, Š.; Orava, J.; Kohoutek, T.; Wágner, T.; Frumar, M.; Zima, Vítězslav; Hara, T.; Matsui, Y.; Ueda, K.; Pumera, M.

2010-01-01

Roč. 183, č. 1 (2010), s. 144-149 ISSN 0022-4596 R&D Projects: GA ČR GA203/08/0208 Institutional research plan: CEZ:AV0Z40500505 Keywords : carbon nanotubes * chalcogenide glasses * composites Subject RIV: CA - Inorganic Chemistry Impact factor: 2.261, year: 2010

Dry etching of thin chalcogenide films

Energy Technology Data Exchange (ETDEWEB)

Petkov, Kiril [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria); Vassilev, Gergo; Vassilev, Venceslav, E-mail: kpetkov@clf.bas.b [Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria)

2010-04-01

Fluorocarbon plasmas (pure and mixtures with Ar) were used to investigate the changes in the etching rate depending on the chalcogenide glasses composition and light exposure. The experiments were performed on modified commercial HZM-4 vacuum equipment in a diode electrode configuration. The surface microstructure of thin chalcogenide layers and its change after etching in CCl{sub 2}F{sub 2} and CF{sub 4} plasmas were studied by SEM. The dependence of the composition of As-S-Ge, As-Se and multicomponent Ge-Se-Sb-Ag-I layers on the etching rate was discussed. The selective etching of some glasses observed after light exposure opens opportunities for deep structure processing applications.

Visible-active photocatalytic behaviors observed in nanostructured lead chalcogenides PbX (X = S, Se, Te)

International Nuclear Information System (INIS)

Qiao, Li-Na; Wang, H.C.; Shen, Y.; Lin, Yuan-Hua; Nan, Ce-Wen

2016-01-01

Nanostructured lead chalcogenides (PbX, X = Te, Se, S) were prepared via a simple hydrothermal method. The powder samples were characterized by XRD, SEM, SAED and DRS. Phase composition and microstructure analysis indicate that these samples are pure lead chalcogenides phases and have similar morphologies. These lead chalcogenides display efficient absorption in the UV-visible light range. The photocatalytic properties of lead chalcogenides nanoparticles were evaluated by the photodegradation of Congo red under UV-visible light irradiation in air atmosphere. The Congo red solution can be efficiently degraded under visible light in the presence of lead chalcogenides nanoparticles. The photocatalytic activities of lead chalcogenides generally increase with increasing their band gaps and shows no appreciable loss after repeated cycles. Our results may be useful for developing new photocatalyst systems responsive to visible light among narrow band gap semiconductors

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

Energy Technology Data Exchange (ETDEWEB)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Novak, Spencer; Richardson, Kathleen [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, South Carolina 29634 (United States); Fathpour, Sasan, E-mail: fathpour@creol.ucf.edu [CREOL, The College of Optics and Photonics, University of Central Florida, Orlando, Florida 32816 (United States); Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

2015-03-16

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

International Nuclear Information System (INIS)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh; Novak, Spencer; Richardson, Kathleen; Fathpour, Sasan

2015-01-01

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes

Index change of chalcogenide materials from precision glass molding processes

Science.gov (United States)

Deegan, J.; Walsh, K.; Lindberg, G.; Benson, R.; Gibson, D.; Bayya, S.; Sanghera, J.; Stover, E.

2015-05-01

With the increase in demand for infrared optics for thermal applications and the use of glass molding of chalcogenide materials to support these higher volume optical designs, an investigation of changes to the optical properties of these materials is required. Typical precision glass molding requires specific thermal conditions for proper lens molding of any type of optical glass. With these conditions a change (reduction) of optical index occurs after molding of all oxide glass types and it is presumed that a similar behavior will happen with chalcogenide based materials. We will discuss the effects of a typical molding thermal cycle for use with commercially and newly developed chalcogenide materials and show results of index variation from nominally established material data.

Similarity in the superconducting properties of chalcogenides, cuprate oxides and fullerides

International Nuclear Information System (INIS)

Tsendin, K.D.; Popov, B.P.; Denisov, D.V.

2004-01-01

The idea of Anderson pairs has been put forward for explanation of many extraordinary properties of chalcogenides glassy semiconductors. Recent decades made obvious that these pairs localized on the centers with negative effective correlation energy (negative-U centers) really exist in chalcogenides. If the concentration of negative-U centers is enough to create the pair band states, this can lead to superconductivity because Anderson pairs are Bose particles. In the present paper we show that several puzzling superconductivity properties of chalcogenides, high-temperature cuprate superconductors and fullerides are similar for these three groups of materials and can be naturally explained in the frame of negative-U centers model of superconductivity

Chalcogenide Glass Optical Waveguides for Infrared Biosensing

Directory of Open Access Journals (Sweden)

Bruno Bureau

2009-09-01

Full Text Available Due to the remarkable properties of chalcogenide (Chg glasses, Chg optical waveguides should play a significant role in the development of optical biosensors. This paper describes the fabrication and properties of chalcogenide fibres and planar waveguides. Using optical fibre transparent in the mid-infrared spectral range we have developed a biosensor that can collect information on whole metabolism alterations, rapidly and in situ. Thanks to this sensor it is possible to collect infrared spectra by remote spectroscopy, by simple contact with the sample. In this way, we tried to determine spectral modifications due, on the one hand, to cerebral metabolism alterations caused by a transient focal ischemia in the rat brain and, in the other hand, starvation in the mouse liver. We also applied a microdialysis method, a well known technique for in vivo brain metabolism studies, as reference. In the field of integrated microsensors, reactive ion etching was used to pattern rib waveguides between 2 and 300 μm wide. This technique was used to fabricate Y optical junctions for optical interconnections on chalcogenide amorphous films, which can potentially increase the sensitivity and stability of an optical micro-sensor. The first tests were also carried out to functionalise the Chg planar waveguides with the aim of using them as (biosensors.

Synthesis of 2D Metal Chalcogenide Thin Films through the Process Involving Solution-Phase Deposition.

Science.gov (United States)

Giri, Anupam; Park, Gyeongbae; Yang, Heeseung; Pal, Monalisa; Kwak, Junghyeok; Jeong, Unyong

2018-04-24

2D metal chalcogenide thin films have recently attracted considerable attention owing to their unique physicochemical properties and great potential in a variety of applications. Synthesis of large-area 2D metal chalcogenide thin films in controllable ways remains a key challenge in this research field. Recently, the solution-based synthesis of 2D metal chalcogenide thin films has emerged as an alternative approach to vacuum-based synthesis because it is relatively simple and easy to scale up for high-throughput production. In addition, solution-based thin films open new opportunities that cannot be achieved from vacuum-based thin films. Here, a comprehensive summary regarding the basic structures and properties of different types of 2D metal chalcogenides, the mechanistic details of the chemical reactions in the synthesis of the metal chalcogenide thin films, recent successes in the synthesis by different reaction approaches, and the applications and potential uses is provided. In the last perspective section, the technical challenges to be overcome and the future research directions in the solution-based synthesis of 2D metal chalcogenides are discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Breakthrough switching speed with an all-optical chalcogenide glass chip: 640 Gbit/s demultiplexing

DEFF Research Database (Denmark)

Galili, Michael; Xu, Jing; Mulvad, Hans Christian Hansen

2009-01-01

We report the first demonstration of error-free 640 Gbit/s demultiplexing using the Kerr non-linearity of an only 5 cm long chalcogenide glass waveguide chip. Our approach exploits four-wave mixing by the instantaneous nonlinear response of chalcogenide. Excellent performance is achieved with onl...... 2 dB average power penalty and no indication of error-floor. Characterisation of the FWM efficiency for the chalcogenide waveguide is given and confirms the good performance of the device....

Hydrothermal synthesis of layered iron-chalcogenide superconductors and related compounds

International Nuclear Information System (INIS)

Pachmayr, Ursula Elisabeth

2017-01-01

This thesis provides a new preparative approach to iron-chalcogenide based superconductors. The hydrothermal synthesis of anti-PbO type FeSe, which can be seen as basis structure of the compounds of interest was successfully developed. Along with this, some insights regarding the influence of synthesis parameters were gained featuring a basis for further hydrothermal syntheses of new iron-chalcogenide compounds. The potential of this method, primarily the extension of the so far limited accessibility of iron-chalcogenide based superconductors by solid-state sythesis, was revealed within the present work. The solid-solution FeSe_1_-_xS_x was prepared for the whole substitution range, whereas solid-state synthesis exhibits a solubility limit at x = 0.3. Furthermore, the new compounds [(Li_0_._8Fe_0_._2)OH]FeX (X = Se, S) were synthesized which are exclusively accessible via hydrothermal method. The compounds, where layers of (Li_0_._8Fe_0_._2)OH alternate with FeX layers, feature exceptional physical properties, notably a coexistence of superconductivity and ferromagnetism. They were intensively studied within this work. By combination of solid-state and hydrothermal ion-exchange synthesis even large crystals necessary for subsequent physical measurements are accessible. Apart from these layered iron-chalcogenide superconductors, further compounds which likewise exhibit building blocks of edge-sharing FeSe_4 tetrahedra were found via this synthesis method. The iron selenides A_2Fe_4Se_6 (A = K, Rb, Cs) consist of double chains of [Fe_2Se_3]"1"-, whereas a new compound Na_6(H_2O)_1_8Fe_4Se_8 exhibits [Fe_4Se_8]"6"- 'stella quadrangula' clusters. This structural diversity as well as the associated physical properties of the compounds demonstrates the numerous capabilities of hydrothermal synthesis in the field of iron-chalcogenide compounds. In particular with regard to iron-chalcogenide based superconductors this synthesis strategy is encouraging. It seems probable

Hydrothermal synthesis of layered iron-chalcogenide superconductors and related compounds

Energy Technology Data Exchange (ETDEWEB)

Pachmayr, Ursula Elisabeth

2017-04-06

This thesis provides a new preparative approach to iron-chalcogenide based superconductors. The hydrothermal synthesis of anti-PbO type FeSe, which can be seen as basis structure of the compounds of interest was successfully developed. Along with this, some insights regarding the influence of synthesis parameters were gained featuring a basis for further hydrothermal syntheses of new iron-chalcogenide compounds. The potential of this method, primarily the extension of the so far limited accessibility of iron-chalcogenide based superconductors by solid-state sythesis, was revealed within the present work. The solid-solution FeSe{sub 1-x}S{sub x} was prepared for the whole substitution range, whereas solid-state synthesis exhibits a solubility limit at x = 0.3. Furthermore, the new compounds [(Li{sub 0.8}Fe{sub 0.2})OH]FeX (X = Se, S) were synthesized which are exclusively accessible via hydrothermal method. The compounds, where layers of (Li{sub 0.8}Fe{sub 0.2})OH alternate with FeX layers, feature exceptional physical properties, notably a coexistence of superconductivity and ferromagnetism. They were intensively studied within this work. By combination of solid-state and hydrothermal ion-exchange synthesis even large crystals necessary for subsequent physical measurements are accessible. Apart from these layered iron-chalcogenide superconductors, further compounds which likewise exhibit building blocks of edge-sharing FeSe{sub 4} tetrahedra were found via this synthesis method. The iron selenides A{sub 2}Fe{sub 4}Se{sub 6} (A = K, Rb, Cs) consist of double chains of [Fe{sub 2}Se{sub 3}]{sup 1-}, whereas a new compound Na{sub 6}(H{sub 2}O){sub 18}Fe{sub 4}Se{sub 8} exhibits [Fe{sub 4}Se{sub 8}]{sup 6-} 'stella quadrangula' clusters. This structural diversity as well as the associated physical properties of the compounds demonstrates the numerous capabilities of hydrothermal synthesis in the field of iron-chalcogenide compounds. In particular with regard

Superconducting properties of iron chalcogenide thin films

Directory of Open Access Journals (Sweden)

Paolo Mele

2012-01-01

Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

Transuranium element chalcogenides. Crystallochemistry and Moessbauer spectrometry of neptunium 237 chalcogenides

International Nuclear Information System (INIS)

Thevenin, T.; Pages, M.; Damien, D.

1981-09-01

To study actinide compounds , neptunium 237 has been studied by Moessbauer resonance. The different oxidation degrees of neptunium (7, 6, 5, 4 and 3) have a very important effect on isomeric displacements. In the study of chalcogenides, the isomeric displacement value of NpS 3 confirms the valency 4+ of neptunium in this compound. Results obtained with Np 3 S 5 show two valency state +3 and +4 in this compound. There is a good agreement with the two crystalline sites determined by crystallography [fr

Method to synthesize metal chalcogenide monolayer nanomaterials

Science.gov (United States)

Hernandez-Sanchez, Bernadette A.; Boyle, Timothy J.

2016-12-13

Metal chalcogenide monolayer nanomaterials can be synthesized from metal alkoxide precursors by solution precipitation or solvothermal processing. The synthesis routes are more scalable, less complex and easier to implement than other synthesis routes.

Chalcogenide glasses as optical and ion-conducting materials. Kogaku oyobi ion dendo zairyo toshite no chalcogenide glass

Energy Technology Data Exchange (ETDEWEB)

Toge, N.; Minami, T. (Univ. of Osaka Prefecture, Osaka (Japan))

1991-12-01

Nonoxide glasses whose main constituent are chalcogen elements like S, Se, or Te etc. show a lot of various properties, for instance, high infrared transmittancy and semi-conductivity which are already well known. Additionally, the optical properties change a lot along with the phase transition's happening between crystal and noncrystal under comparative low temperature. Further, it is also observed that the glasses containing proper cation appear high ion-conductivity. This paper supplies a brief reviews of chalcogenide glasses used as materials for infrared fiber, phase transition optical memory and superionic conductor, wherein the former two have already on the stage of utilization, particularly the realization of a rewritable optical memory is possible by using chalcogenide glasses film, and ion-conductor is in the phase to have shown the possibility of high conductivity while the development thereof is being expected. 22 refs., 8 figs.

Forced Ion Migration for Chalcogenide Phase Change Memory Device

Science.gov (United States)

Campbell, Kristy A (Inventor)

2013-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

New Trends in Amplifiers and Sources via Chalcogenide Photonic Crystal Fibers

Directory of Open Access Journals (Sweden)

L. Mescia

2012-01-01

Full Text Available Rare-earth-doped chalcogenide glass fiber lasers and amplifiers have great applicative potential in many fields since they are key elements in the near and medium-infrared (mid-IR wavelength range. In this paper, a review, even if not exhaustive, on amplification and lasing obtained by employing rare-earth-doped chalcogenide photonic crystal fibers is reported. Materials, devices, and feasible applications in the mid-IR are briefly mentioned.

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

Directory of Open Access Journals (Sweden)

Fei Zhuge

2015-05-01

Full Text Available It has been reported that in chalcogenide-based electrochemical metallization (ECM memory cells (e.g., As2S3:Ag, GeS:Cu, and Ag2S, the metal filament grows from the cathode (e.g., Pt and W towards the anode (e.g., Cu and Ag, whereas filament growth along the opposite direction has been observed in oxide-based ECM cells (e.g., ZnO, ZrO2, and SiO2. The growth direction difference has been ascribed to a high ion diffusion coefficient in chalcogenides in comparison with oxides. In this paper, upon analysis of OFF state I–V characteristics of ZnS-based ECM cells, we find that the metal filament grows from the anode towards the cathode and the filament rupture and rejuvenation occur at the cathodic interface, similar to the case of oxide-based ECM cells. It is inferred that in ECM cells based on the chalcogenides such as As2S3:Ag, GeS:Cu, and Ag2S, the filament growth from the cathode towards the anode is due to the existence of an abundance of ready-made mobile metal ions in the chalcogenides rather than to the high ion diffusion coefficient.

Interfacial scanning tunneling spectroscopy (STS) of chalcogenide/metal hybrid nanostructure

Energy Technology Data Exchange (ETDEWEB)

Saad, Mahmoud M.; Abdallah, Tamer [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt); Easawi, Khalid; Negm, Sohair [Department of Physics and Mathematics, Faculty of Engineering (Shoubra), Benha University (Egypt); Talaat, Hassan, E-mail: hassantalaat@hotmail.com [Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo (Egypt)

2015-05-15

Graphical abstract: - Highlights: • Comparing band gaps values obtained optically with STS. • Comparing direct imaging with calculated dimensions. • STS determination of the interfacial band bending of metal/chalcogenide. - Abstract: The electronic structure at the interface of chalcogenide/metal hybrid nanostructure (CdSe–Au tipped) had been studied by UHV scanning tunneling spectroscopy (STS) technique at room temperature. This nanostructure was synthesized by a phase transfer chemical method. The optical absorption of this hybrid nanostructure was recorded, and the application of the effective mass approximation (EMA) model gave dimensions that were confirmed by the direct measurements using the scanning tunneling microscopy (STM) as well as the high-resolution transmission electron microscope (HRTEM). The energy band gap obtained by STS agrees with the values obtained from the optical absorption. Moreover, the STS at the interface of CdSe–Au tipped hybrid nanostructure between CdSe of size about 4.1 ± 0.19 nm and Au tip of size about 3.5 ± 0.29 nm shows a band bending about 0.18 ± 0.03 eV in CdSe down in the direction of the interface. Such a result gives a direct observation of the electron accumulation at the interface of CdSe–Au tipped hybrid nanostructure, consistent with its energy band diagram. The presence of the electron accumulation at the interface of chalcogenides with metals has an important implication for hybrid nanoelectronic devices and the newly developed plasmon/chalcogenide photovoltaic solar energy conversion.

Debye temperatures of uranium chalcogenides from their lattice ...

Indian Academy of Sciences (India)

Unknown

From the phonon frequencies, their Debye temperatures are evaluated. Further, ... Keywords. Uranium chalcogenides; p-wave electronic superconductor; phonon frequency; Debye tempera- ture; spin ... to the ionic crystals of similar structure.

Synthesis of cadmium chalcogenide nanotubes at room temperature

KAUST Repository

Pan, Jun; Qian, Yitai

2012-01-01

Cadmium chalcogenide (CdE, E=S, Se, Te) polycrystalline nanotubes have been synthesized from precursor of CdS/cadmium thiolate complex at room temperature. The precursor was hydrothermally synthesized at 180 °C using thioglycolic acid (TGA) and cadmium acetate as starting materials. The transformation from the rod-like precursor of CdS/cadmium thiolate complex to CdS, CdSe and CdTe nanotubes were performed under constant stirring at room temperature in aqueous solution containing S 2-, Se 2- and Te 2-, respectively. The nanotube diameter can be controlled from 150 to 400 nm related to the dimension of templates. The XRD patterns show the cadmium chalcogenide nanotubes all corresponding to face-centered cubic structure. © 2012 Elsevier B.V. All rights reserved.

Synthesis of cadmium chalcogenide nanotubes at room temperature

KAUST Repository

Pan, Jun

2012-10-01

Cadmium chalcogenide (CdE, E=S, Se, Te) polycrystalline nanotubes have been synthesized from precursor of CdS/cadmium thiolate complex at room temperature. The precursor was hydrothermally synthesized at 180 °C using thioglycolic acid (TGA) and cadmium acetate as starting materials. The transformation from the rod-like precursor of CdS/cadmium thiolate complex to CdS, CdSe and CdTe nanotubes were performed under constant stirring at room temperature in aqueous solution containing S 2-, Se 2- and Te 2-, respectively. The nanotube diameter can be controlled from 150 to 400 nm related to the dimension of templates. The XRD patterns show the cadmium chalcogenide nanotubes all corresponding to face-centered cubic structure. © 2012 Elsevier B.V. All rights reserved.

Modulation-instability biosensing using an As2S3 chalcogenide tapered fiber

DEFF Research Database (Denmark)

Markos, Christos; Bang, Ole

2016-01-01

We demonstrate an experimentally feasible biosensor design based on As2S3 chalcogenide tapered fiber. Pumping the fiber close to 1064 nm, a record sensitivity up to ~18 nm/nm was predicted.......We demonstrate an experimentally feasible biosensor design based on As2S3 chalcogenide tapered fiber. Pumping the fiber close to 1064 nm, a record sensitivity up to ~18 nm/nm was predicted....

Multimode supercontinuum generation in chalcogenide glass fibres

DEFF Research Database (Denmark)

Kubat, Irnis; Bang, Ole

2016-01-01

Mid-infrared supercontinuum generation is considered in chalcogenide fibres when taking into account both polarisations and the necessary higher order modes. In particular we focus on high pulse energy supercontinuum generation with long pump pulses. The modeling indicates that when only a single...

ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

International Nuclear Information System (INIS)

Berruet, M.; Di Iorio, Y.; Troviano, M.; Vázquez, M.

2014-01-01

Solution-based techniques were used to prepare ZnO/CuIn(Se, S) 2 heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe 2 (CISe) and CuInSe 2−x S x (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO 2 into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe 2 or CuInSe 0.4 S 1.6 . • A TiO 2 buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction

Infrared emitting and photoconducting colloidal silver chalcogenide nanocrystal quantum dots from a silylamide-promoted synthesis.

Science.gov (United States)

Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Günter; Heiss, Wolfgang

2011-05-24

Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region, making these materials promising as environmentally benign alternatives to established infrared active nanocrystals containing toxic metals such as Hg, Cd, and Pb. We present Ag(2)Se nanocrystals in detail, giving size-tunable luminescence with quantum yields above 1.7%. The luminescence, with a decay time on the order of 130 ns, was shown to improve due to the growth of a monolayer thick ZnSe shell. Photoconductivity with a quantum efficiency of 27% was achieved by blending the Ag(2)Se nanocrystals with a soluble fullerene derivative. The co-injection of lithium silylamide was found to be crucial to the synthesis of Ag chalcogenide nanocrystals, which drastically increased their nucleation rate even at relatively low growth temperatures. Because the same observation was made for the nucleation of Cd chalcogenide nanocrystals, we conclude that the addition of lithium silylamide might generally promote wet-chemical synthesis of metal chalcogenide nanocrystals, including in as-yet unexplored materials.

Fabrication and characterization of on-chip optical nonlinear chalcogenide nanofiber devices.

Science.gov (United States)

Zhang, Qiming; Li, Ming; Hao, Qiang; Deng, Dinghuan; Zhou, Hui; Zeng, Heping; Zhan, Li; Wu, Xiang; Liu, Liying; Xu, Lei

2010-11-15

Chalcogenide (As(2)S(3)) nanofibers as narrow as 200 nm in diameter are drawn by the fiber pulling method, are successfully embedded in SU8 polymer, and form on-chip waveguides and high-Q microknot resonators (Q = 3.9 × 10(4)) with smooth cleaved end faces. Resonance tuning of resonators is realized by localized laser irradiation. Strong supercontinuum generation with a bandwidth of 500 nm is achieved in a 7-cm-long on-chip chalcogenide waveguide. Our result provides a method for the development of compact, high-optical-quality, and robust photonic devices.

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan; Li, Peng; Li, Jun; Jiang, Qiu; Zhang, Xixiang; Alshareef, Husam N.

2016-01-01

) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115

Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers

International Nuclear Information System (INIS)

Charnovych, S.; Nemec, P.; Nazabal, V.; Csik, A.; Allix, M.; Matzen, G.; Kokenyesi, S.

2011-01-01

Highlights: → Amorphous chalcogenides were investigated in this work. → Photo-induced effects were investigated in the created thin films. → Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers have been studied. - Abstract: Photo induced changes in amorphous As 20 Se 80 /alumino-silicate nanomultilayers (NML) produced by pulsed laser deposition (PLD) method have been studied in this work. The aim was to investigate the photo induced optical and surface relief changes due to the band gap illumination under the size- and hard cover limited conditions. It was observed that the hard cover layer on the surface of the uniform film or alumino-silicate sub-layers in the NML structure influences the photo darkening and restricts surface relief formations in As 20 Se 80 film or in the related NML compared with this effect in a pure chalcogenide layer. The influence of hard layers is supposed to be connected with limiting the free volume formation at the initial stage of the transformation process, which in turn limits the atomic movement and so the surface relief formation.

Infrared Emitting and Photoconducting Colloidal Silver Chalcogenide Nanocrystal Quantum Dots from a Silylamide-Promoted Synthesis

NARCIS (Netherlands)

Yarema, Maksym; Pichler, Stefan; Sytnyk, Mykhailo; Seyrkammer, Robert; Lechner, Rainer T.; Fritz-Popovski, Gerhard; Jarzab, Dorota; Szendrei, Krisztina; Resel, Roland; Korovyanko, Oleksandra; Loi, Maria Antonietta; Paris, Oskar; Hesser, Guenter; Heiss, Wolfgang; Hesser, Günter

Here, we present a hot injection synthesis of colloidal Ag chalcogenide nanocrystals (Ag(2)Se, Ag(2)Te, and Ag(2)S) that resulted in exceptionally small nanocrystal sizes in the range between 2 and 4 nm. Ag chalcogenide nanocrystals exhibit band gap energies within the near-infrared spectral region,

Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications

Energy Technology Data Exchange (ETDEWEB)

Němec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Charrier, J. [FOTON, UMR CNRS 6082, Enssat, 6 rue de Kerampont, BP 80518, 22305 Lannion (France); Cathelinaud, M. [Missions des Ressources et Compétences Technologiques, UPS CNRS 2274, 92195 Meudon (France); Allix, M. [CEMHTI-CNRS, Site Haute Température, Orléans (France); Adam, J.-L.; Zhang, S. [Equipe Verres et Céramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Université de Rennes 1, 35042 Rennes Cedex (France); Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.fr [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Equipe Verres et Céramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Université de Rennes 1, 35042 Rennes Cedex (France)

2013-07-31

Amorphous chalcogenide and alumino-silicate thin films were fabricated by the pulsed laser deposition technique. Prepared films were characterized in terms of their morphology, chemical composition, and optical properties. Multilayered thin film stacks for reflectors and vertical microcavities were designed for telecommunication wavelength and the window of atmosphere transparency (band II) at 1.54 μm and 4.65 μm, respectively. Bearing in mind the benefit coming from the opportunity of an efficient wavelength tuning or, conversely, to stabilize the photoinduced effects in chalcogenide films as well as to improve their mechanical properties and/or their chemical durability, several pairs of materials from pure chalcogenide layers to chalcogenide/oxide layers were investigated. Different layer stacks were fabricated in order to check the compatibility between dissimilar materials which can have a strong influence on the interface roughness, adhesion, density, and homogeneity, for instance. Three different reflector designs were formulated and tested including all-chalcogenide layers (As{sub 40}Se{sub 60}/Ge{sub 25}Sb{sub 5}S{sub 70}) and mixed chalcogenide-oxide layers (As{sub 40}Se{sub 60}/alumino-silicate and Ga{sub 10}Ge{sub 15}Te{sub 75}/alumino-silicate). Prepared multilayers showed good compatibility between different material pairs deposited by laser ablation despite the diversity of chemical compositions. As{sub 40}Se{sub 60}/alumino-silicate reflector showed the best parameters; its stop band (R > 97% at 8° off-normal incidence) has a bandwidth of ∼ 100 nm and it is centered at 1490 nm. The quality of the different mirrors developed was good enough to try to obtain a microcavity structure for the 1.5 μm telecommunication wavelength made of chalcogenide layers. The microcavity structure consists of Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} (doped with 5000 ppm of Er{sup 3+}) spacer surrounded by two 10-layer As{sub 40}Se{sub 60}/Ge{sub 25}Sb{sub 5}S{sub 70

ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

Energy Technology Data Exchange (ETDEWEB)

Berruet, M., E-mail: berruetm@gmail.com [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Di Iorio, Y. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina); Troviano, M. [Instituto de Investigación y Desarrollo en Ingeniería de Procesos, Biotecnología y Energías Alternativas (PROBIEN, CONICET-UNCo), Buenos Aires 1400, Q8300IBX Neuquén (Argentina); Vázquez, M. [División Electroquímica y Corrosión, Facultad de Ingeniería, INTEMA, CONICET, Universidad Nacional de Mar del Plata, Juan B. Justo 4302, B7608FDQ Mar del Plata (Argentina)

2014-12-15

Solution-based techniques were used to prepare ZnO/CuIn(Se, S){sub 2} heterojunctions that serve as solar cell prototypes. A duplex layer of ZnO (compact + porous) was electrodeposited. Chalcogenide thin films were deposited using successive ionic layer adsorption and reaction method (SILAR). By subsequent thermal treatments in two different atmospheres, CuInSe{sub 2} (CISe) and CuInSe{sub 2−x}S{sub x} (CISeS) were obtained. The composition and morphology of the annealed films were characterized by GXRD, micro-Raman spectroscopy and SEM. Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO{sub 2} into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques. - Highlights: • Heterojunctions that serve as solar cell prototypes were prepared using solution-based techniques. • The devices comprised a double layer of ZnO and CuInSe{sub 2} or CuInSe{sub 0.4}S{sub 1.6}. • A TiO{sub 2} buffer layer in the ZnO/chalcogenide interface is necessary to detect photocurrent. • The incorporation of S improved the response of the photovoltaic heterojunction.

Surfactant free metal chalcogenides microparticles consisting of ...

Indian Academy of Sciences (India)

SANYASINAIDU GOTTAPU

2017-11-11

Nov 11, 2017 ... Metal chalcogenides; copper sulphide; copper selenide; micro flowers. 1. Introduction .... adding calculated quantity (2.7 mmol) of each acid separately. .... salts (LiCl, LiNO3, and LiOAc), and then hydride ions from (BH. − ... Concentration of metal .... hait A and Lim J Y 2016 Cation exchange synthesis of.

The intercalation chemistry of layered iron chalcogenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Vivanco, Hector K.; Rodriguez, Efrain E., E-mail: efrain@umd.edu

2016-10-15

The iron chalcogenides FeSe and FeS are superconductors composed of two-dimensional sheets held together by van der Waals interactions, which makes them prime candidates for the intercalation of various guest species. We review the intercalation chemistry of FeSe and FeS superconductors and discuss their synthesis, structure, and physical properties. Before we review the latest work in this area, we provide a brief background on the intercalation chemistry of other inorganic materials that exhibit enhanced superconducting properties upon intercalation, which include the transition metal dichalcogenides, fullerenes, and layered cobalt oxides. From past studies of these intercalated superconductors, we discuss the role of the intercalates in terms of charge doping, structural distortions, and Fermi surface reconstruction. We also briefly review the physical and chemical properties of the host materials—mackinawite-type FeS and β-FeSe. The three types of intercalates for the iron chalcogenides can be placed in three categories: 1.) alkali and alkaline earth cations intercalated through the liquid ammonia technique; 2.) cations intercalated with organic amines such as ethylenediamine; and 3.) layered hydroxides intercalated during hydrothermal conditions. A recurring theme in these studies is the role of the intercalated guest in electron doping the chalcogenide host and in enhancing the two-dimensionality of the electronic structure by spacing the FeSe layers apart. We end this review discussing possible new avenues in the intercalation chemistry of transition metal monochalcogenides, and the promise of these materials as a unique set of new inorganic two-dimensional systems.

Inverse opal photonic crystal of chalcogenide glass by solution processing.

Science.gov (United States)

Kohoutek, Tomas; Orava, Jiri; Sawada, Tsutomu; Fudouzi, Hiroshi

2011-01-15

Chalcogenide opal and inverse opal photonic crystals were successfully fabricated by low-cost and low-temperature solution-based process, which is well developed in polymer films processing. Highly ordered silica colloidal crystal films were successfully infilled with nano-colloidal solution of the high refractive index As(30)S(70) chalcogenide glass by using spin-coating method. The silica/As-S opal film was etched in HF acid to dissolve the silica opal template and fabricate the inverse opal As-S photonic crystal. Both, the infilled silica/As-S opal film (Δn ~ 0.84 near λ=770 nm) and the inverse opal As-S photonic structure (Δn ~ 1.26 near λ=660 nm) had significantly enhanced reflectivity values and wider photonic bandgaps in comparison with the silica opal film template (Δn ~ 0.434 near λ=600 nm). The key aspects of opal film preparation by spin-coating of nano-colloidal chalcogenide glass solution are discussed. The solution fabricated "inorganic polymer" opal and the inverse opal structures exceed photonic properties of silica or any organic polymer opal film. The fabricated photonic structures are proposed for designing novel flexible colloidal crystal laser devices, photonic waveguides and chemical sensors. Copyright © 2010 Elsevier Inc. All rights reserved.

Homogeneity and internal defects detect of infrared Se-based chalcogenide glass

Science.gov (United States)

Li, Zupana; Wu, Ligang; Lin, Changgui; Song, Bao'an; Wang, Xunsi; Shen, Xiang; Dai, Shixunb

2011-10-01

Ge-Sb-Se chalcogenide glasses is a kind of excellent infrared optical material, which has been enviromental friendly and widely used in infrared thermal imaging systems. However, due to the opaque feature of Se-based glasses in visible spectral region, it's difficult to measure their homogeneity and internal defect as the common oxide ones. In this study, a measurement was proposed to observe the homogeneity and internal defect of these glasses based on near-IR imaging technique and an effective measurement system was also constructed. The testing result indicated the method can gives the information of homogeneity and internal defect of infrared Se-based chalcogenide glass clearly and intuitionally.

Conductivity in Ag-As-S(Se,Te) chalcogenide glasses

Czech Academy of Sciences Publication Activity Database

Stehlík, Š.; Kolář, J.; Bartoš, M.; Vlček, Milan; Frumar, M.; Zima, Vítězslav; Wágner, T.

2010-01-01

Roč. 181, 37/38 (2010), s. 1625-1630 ISSN 0167-2738 Institutional research plan: CEZ:AV0Z40500505 Keywords : chalcogenide glasses * ionics conductivity * phase separation Subject RIV: CA - Inorganic Chemistry Impact factor: 2.496, year: 2010

Debye temperatures of uranium chalcogenides from their lattice ...

Indian Academy of Sciences (India)

Phonon dispersion relations in uranium chalcogenides have been investigated using a modified three-body force shell model. From the phonon frequencies, their Debye temperatures are evaluated. Further, on the basis of the spin fluctuation in the heavy fermion uranium compounds, UPt3 and UBe13, the possible ...

Chalcogenide Sensitized Carbon Based TiO2 Nanomaterial For Solar Driven Applications

Science.gov (United States)

Pathak, Pawan

The demand for renewable energy is growing because fossils fuels are depleting at a rapid pace. Solar energy an abundant green energy resource. Utilizing this resource in a smart manner can resolve energy-crisis related issues. Sun light can be efficiently harvested using semiconductor based materials by utilizing photo-generated charges for numerous beneficial applications. The main goal of this thesis is to synthesize different nanostructures of TiO2, develop a novel method of coupling and synthesizing chalcogenide nanocrystals with TiO2 and to study the charge transportation effects of the various carbon allotropes in the chalcogenide nanocrystal sensitized TiO2 nanostructure. We have fabricated different nanostructures of TiO2 as solar energy harvesting materials. Effects of the different phases of TiO2 have also been studied. The anatase phase of TiO2 is more photoactive than the rutile phase of TiO2, and the higher dimension of the TiO2 can increase the surface area of the material which can produce higher photocurrent. Since TiO2 only absorbs in the UV range; to increase the absorbance TiO2 should be coupled to visible light absorbing materials. This dissertation presents a simple approach to synthesize and couple chalcogenide nanocrystals with TiO2 nanostructure to form a heterostructured composite. An atmospheric pressure based, single precursor, one-pot approach has been developed and tested to assemble chalcogenide nanocrystal on the TiO2 surface. Surface characterization using microscopy, X-ray diffraction, and elemental analysis indicates the formation of nanocrystals along the nanotube walls and inter-tubular spacing. Optical measurements indicate that the chalcogenide nanocrystals absorb in the visible region and demonstrate an increase in photocurrent in comparison to bare TiO2 nanostructure. The CdS synthesized TiO2 nanostructure produced the highest photocurrent as measured in the three electrode system. We have also assembled the PbS nanocrystal

Theoretical study of phonon dispersion, elastic, mechanical and thermodynamic properties of barium chalcogenides

Science.gov (United States)

Musari, A. A.; Orukombo, S. A.

2018-03-01

Barium chalcogenides are known for their high-technological importance and great scientific interest. Detailed studies of their elastic, mechanical, dynamical and thermodynamic properties were carried out using density functional theory and plane-wave pseudo potential method within the generalized gradient approximation. The optimized lattice constants were in good agreement when compared with experimental data. The independent elastic constants, calculated from a linear fit of the computed stress-strain function, were used to determine the Young’s modulus (E), bulk modulus (B), shear modulus (G), Poisson’s ratio (σ) and Zener’s anisotropy factor (A). Also, the Debye temperature and sound velocities for barium chalcogenides were estimated from the three independent elastic constants. The calculations of phonon dispersion showed that there are no negative frequencies throughout the Brillouin zone. Hence barium chalcogenides have dynamically stable NaCl-type crystal structure. Finally, their thermodynamic properties were calculated in the temperature range of 0-1000 K and their constant-volume specific heat capacities at room-temperature were reported.

Amorphous chalcogenides advances and applications

CERN Document Server

Wang, Rong Ping

2014-01-01

This book provides a comprehensive overview of the chalcogenide glass science and various applications based on the glasses. It starts with a review on the glass-forming ability of various systems, followed by a discussion on the structural and physical properties of various chalcolgenide glasses and their application in integrated optics. The chapters have been contributed by prominent experts from all over the world, and therefore, the book presents the recent research advances in the area. This book will appeal to anyone who is involved in glass science and technology and glass application.

New functionality of chalcogenide glasses for radiation sensing of nuclear wastes

International Nuclear Information System (INIS)

Ailavajhala, M.S.; Gonzalez-Velo, Y.; Poweleit, C.D.; Barnaby, H.J.; Kozicki, M.N.; Butt, D.P.; Mitkova, M.

2014-01-01

Highlights: • Study of thin film chalcogenide glasses under gamma radiation and a proposed radiation sensor design. • Structural changes were observed at various radiation doses. • Formation of Ag 2 Se in Se depleted glasses with sufficient radiation dose. • In conventional semiconductor chip environment, the proposed sensor has a linear current vs. dose behavior up to 600 J/cm 2 . - Abstract: Data about gamma radiation induced effects in Ge 40 Se 60 chalcogenide thin films and radiation induced silver diffusion within these are presented. Blanket films and devices were created to study the structural changes, diffusion products, and device performance. Raman spectroscopy, X-ray diffraction, current vs. voltage (I–V) and impedance measurements expound the behavior of Ge 40 Se 60 glass and silver diffusion within this glass under radiation. Raman study shows that there is a decrease in the area ratio between edge shared and corner shared structural units revealing structural reorganization occurring in the glasses as a result of gamma radiation. X-ray diffraction studies revealed that with sufficiently radiation dose it is also possible to create Ag 2 Se in selenium-depleted systems. Oxidation of the Ge enriched chalcogenide backbone is confirmed through the electrical performance of the sensing elements based on these films. Combination of these structural and diffusion products influences the device performance. The I–V behavior is characterized by increase in current and then stabilization as a function of radiation dose. Additionally, device modeling is also presented using Silvaco software and analytical methods to shed light on the device behavior. This type of sensor design and material characterizations facilitate in improving the radiation sensing capabilities of silver containing chalcogenide glass thin films

New functionality of chalcogenide glasses for radiation sensing of nuclear wastes

Energy Technology Data Exchange (ETDEWEB)

Ailavajhala, M.S., E-mail: m.ailavajhala@gmail.com [Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725 (United States); Gonzalez-Velo, Y. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706 (United States); Poweleit, C.D. [Department of Physics, Arizona State University, Tempe, AZ 85287-5706 (United States); Barnaby, H.J.; Kozicki, M.N. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287-5706 (United States); Butt, D.P. [Department of Materials Science and Engineering, Boise State University, Boise, ID 83725 (United States); Mitkova, M., E-mail: maheshailavajhala@u.boisestate.edu [Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725 (United States)

2014-03-01

Highlights: • Study of thin film chalcogenide glasses under gamma radiation and a proposed radiation sensor design. • Structural changes were observed at various radiation doses. • Formation of Ag{sub 2}Se in Se depleted glasses with sufficient radiation dose. • In conventional semiconductor chip environment, the proposed sensor has a linear current vs. dose behavior up to 600 J/cm{sup 2}. - Abstract: Data about gamma radiation induced effects in Ge{sub 40}Se{sub 60} chalcogenide thin films and radiation induced silver diffusion within these are presented. Blanket films and devices were created to study the structural changes, diffusion products, and device performance. Raman spectroscopy, X-ray diffraction, current vs. voltage (I–V) and impedance measurements expound the behavior of Ge{sub 40}Se{sub 60} glass and silver diffusion within this glass under radiation. Raman study shows that there is a decrease in the area ratio between edge shared and corner shared structural units revealing structural reorganization occurring in the glasses as a result of gamma radiation. X-ray diffraction studies revealed that with sufficiently radiation dose it is also possible to create Ag{sub 2}Se in selenium-depleted systems. Oxidation of the Ge enriched chalcogenide backbone is confirmed through the electrical performance of the sensing elements based on these films. Combination of these structural and diffusion products influences the device performance. The I–V behavior is characterized by increase in current and then stabilization as a function of radiation dose. Additionally, device modeling is also presented using Silvaco software and analytical methods to shed light on the device behavior. This type of sensor design and material characterizations facilitate in improving the radiation sensing capabilities of silver containing chalcogenide glass thin films.

Photoinduced Operation by Absorption of the Chalcogenide Nanocrystallite Containing Solar Cells

Directory of Open Access Journals (Sweden)

Elnaggar A.M.

2016-12-01

Full Text Available It is shown that for the solar cells containing chalcogenide nanocrystallites using external laser light, one can achieve some enhancement of the photovoltaic efficiency. Photoinduced treatment was carried out using two beams of splitted Er: glass laser operating at 1.54 μm. The light of the laser was incident at different angles and the angles between the beams also were varied. Also, the studies of nanocomposite effective structures have shown enhancement of effective nanocrystalline sizes during the laser treatment. Nanocrystallites of CuInS2 and CuZnSnS4 (CZTS were used as chalcogenide materials. The optimization of the laser beam intensities and nanoparticle sizes were explored.

The structural heterogeneity and optical properties in chalcogenide glass films

International Nuclear Information System (INIS)

Shurgalin, Max; Fuflyigin, Vladimir N; Anderson, Emilia G

2005-01-01

The microscopic structure and optical properties of glassy films prepared by vapour phase deposition process from the germanium-arsenic-selenium family of chalcogenide glasses have been studied. A number of different molecular clusters or domains that can exist in the glass structure are found to play a significant role in determining the absorption characteristics and refractive index of the glass films. Modifications of the glass structure can be described by a variation of relative concentrations of the clusters and can be effected by modifications of film chemical composition and deposition conditions. Changes in absorption spectra are directly correlated with variation in relative concentrations of the structural fragments with different electronic bandgap properties. Experimental results suggest structural heterogeneity and support validity of the cluster structural model for the chalcogenide glasses

Efficient Mid-Infrared Supercontinuum Generation in Tapered Large Mode Area Chalcogenide Photonic Crystal Fibers

DEFF Research Database (Denmark)

Petersen, Christian Rosenberg; Engelsholm, Rasmus Dybbro; Markos, Christos

2017-01-01

Mid-infrared supercontinuum spanning from 1.8-9  μm with an output power of 41.5 mW is demonstrated by pumping tapered large mode area chalcogenide photonic crystal fibers using a 4 μm optical parametric source.......Mid-infrared supercontinuum spanning from 1.8-9  μm with an output power of 41.5 mW is demonstrated by pumping tapered large mode area chalcogenide photonic crystal fibers using a 4 μm optical parametric source....

Towards efficient solar-to-hydrogen conversion: Fundamentals and recent progress in copper-based chalcogenide photocathodes

Directory of Open Access Journals (Sweden)

Chen Yubin

2016-09-01

Full Text Available Photoelectrochemical (PEC water splitting for hydrogen generation has been considered as a promising route to convert and store solar energy into chemical fuels. In terms of its large-scale application, seeking semiconductor photoelectrodes with high efficiency and good stability should be essential. Although an enormous number of materials have been explored for solar water splitting in the last several decades, challenges still remain for the practical application. P-type copper-based chalcogenides, such as Cu(In, GaSe2 and Cu2ZnSnS4, have shown impressive performance in photovoltaics due to narrow bandgaps, high absorption coefficients, and good carrier transport properties. The obtained high efficiencies in photovoltaics have promoted the utilization of these materials into the field of PEC water splitting. A comprehensive review on copper-based chalcogenides for solar-to-hydrogen conversion would help advance the research in this expanding area. This review will cover the physicochemical properties of copper-based chalco-genides, developments of various photocathodes, strategies to enhance the PEC activity and stability, introductions of tandem PEC cells, and finally, prospects on their potential for the practical solar-to-hydrogen conversion. We believe this review article can provide some insights of fundamentals and applications of copper-based chalco-genide thin films for PEC water splitting.

Theoretical prediction of the structural properties of uranium chalcogenides under high pressure

Science.gov (United States)

Kapoor, Shilpa; Yaduvanshi, Namrata; Singh, Sadhna

2018-05-01

Uranium chalcogenides crystallize in rock salt structure at normal condition and transform to Cesium Chloride structure at high pressure. We have investigated the transition pressure and volume drop of USe and UTe using three body potential model (TBIP). Present model includes long range Columbic, three body interaction forces and short range overlap forces operative up to next nearest neighbors. We have reported the phase transition pressure, relative volume collapses, the thermo physical properties such as molecular force constant (f), infrared absorption frequency (v0), Debye temperature (θD) and Gruneisen parameter (γ) of present chalcogenides and found that our results in general good agreement with experimental and other theoretical data.

Electrical conduction mechanism in GeSeSb chalcogenide glasses

Indian Academy of Sciences (India)

by melt quenching has been determined at different temperatures in bulk through the I–V characteristic curves ... DC conductivity; chalcogenide glass; Sb–Se bonding; Poole–Frenkel mechanism .... measurements were taken at room temperature as well as ele- .... age across the sample was continuued, the induced thermal.

2D Metal Chalcogenides Incorporated into Carbon and their Assembly for Energy Storage Applications.

Science.gov (United States)

Deng, Zongnan; Jiang, Hao; Li, Chunzhong

2018-05-01

2D metal chalcogenides have become a popular focus in the energy storage field because of their unique properties caused by their single-atom thicknesses. However, their high surface energy and van der Waals attraction easily cause serious stacking and restacking, leading to the generation of more inaccessible active sites with rapid capacity fading. The hybridization of 2D metal chalcogenides with highly conductive materials, particularly, incorporating ultrasmall and few-layered metal chalcogenides into carbon frameworks, can not only maximize the exposure of active sites but also effectively avoid their stacking and aggregation during the electrochemical reaction process. Therefore, a satisfactory specific capacity will be achieved with a long cycle life. In this Concept, the representative progress on such intriguing nanohybrids and their applications in energy storage devices are mainly summarized. Finally, an outlook of the future development and challenges of such nanohybrids for achieving an excellent energy storage capability is also provided. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

KAUST Repository

Xia, Chuan

2016-12-30

We demonstrate a versatile top-down ion exchange process, done at ambient temperature, to form epitaxial chalcogenide films and devices, with nanometer scale thickness control. To demonstrate the versatility of our process we have synthesized (1) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115 times higher mobility than NiCo2S4 pellets (23 vs 0.2 cm(2) V-1 s(-1)) prepared by previous reports. By controlling the ion exchange process time, we made free-standing epitaxial films of NiCo2S4 and transferred them onto different substrates. We also demonstrate in situ formation of atomically sharp, lateral Schottky diodes based on NiCo2O4/NiCo2S4 heterojunction, using a single ion exchange step. Additionally, we show that our approach can be easily extended to other chalcogenide semiconductors. Specifically, we used our process to prepare Cu1.8S thin films with mobility that matches single crystal Cu1.8S (25 cm(2) V-1 s(-1)), which is ca. 28 times higher than the previously reported Cu1.8S thin film mobility (0.58 cm(2) V-1 s(-1)), thus demonstrating the universal nature of our process. This is the first report in which chalcogenide thin films retain the epitaxial nature of the precursor oxide films, an approach that will be useful in many applications.

New functionality of chalcogenide glasses for radiation sensing of nuclear wastes.

Science.gov (United States)

Ailavajhala, M S; Gonzalez-Velo, Y; Poweleit, C D; Barnaby, H J; Kozicki, M N; Butt, D P; Mitkova, M

2014-03-30

Data about gamma radiation induced effects in Ge40Se60 chalcogenide thin films and radiation induced silver diffusion within these are presented. Blanket films and devices were created to study the structural changes, diffusion products, and device performance. Raman spectroscopy, X-ray diffraction, current vs. voltage (I-V) and impedance measurements expound the behavior of Ge40Se60 glass and silver diffusion within this glass under radiation. Raman study shows that there is a decrease in the area ratio between edge shared and corner shared structural units revealing structural reorganization occurring in the glasses as a result of gamma radiation. X-ray diffraction studies revealed that with sufficiently radiation dose it is also possible to create Ag2Se in selenium-depleted systems. Oxidation of the Ge enriched chalcogenide backbone is confirmed through the electrical performance of the sensing elements based on these films. Combination of these structural and diffusion products influences the device performance. The I-V behavior is characterized by increase in current and then stabilization as a function of radiation dose. Additionally, device modeling is also presented using Silvaco software and analytical methods to shed light on the device behavior. This type of sensor design and material characterizations facilitate in improving the radiation sensing capabilities of silver containing chalcogenide glass thin films. Copyright © 2013 Elsevier B.V. All rights reserved.

Case studies on the formation of chalcogenide self-assembled monolayers on surfaces and dissociative processes

Directory of Open Access Journals (Sweden)

Yongfeng Tong

2016-02-01

Full Text Available This report examines the assembly of chalcogenide organic molecules on various surfaces, focusing on cases when chemisorption is accompanied by carbon–chalcogen atom-bond scission. In the case of alkane and benzyl chalcogenides, this induces formation of a chalcogenized interface layer. This process can occur during the initial stages of adsorption and then, after passivation of the surface, molecular adsorption can proceed. The characteristics of the chalcogenized interface layer can be significantly different from the metal layer and can affect various properties such as electron conduction. For chalcogenophenes, the carbon–chalcogen atom-bond breaking can lead to opening of the ring and adsorption of an alkene chalcogenide. Such a disruption of the π-electron system affects charge transport along the chains. Awareness about these effects is of importance from the point of view of molecular electronics. We discuss some recent studies based on X-ray photoelectron spectroscopy that shed light on these aspects for a series of such organic molecules.

Study of third order nonlinearity of chalcogenide thin films using third harmonic generation measurements

Science.gov (United States)

Rani, Sunita; Mohan, Devendra; Kumar, Manish; Sanjay

2018-05-01

Third order nonlinear susceptibility of (GeSe3.5)100-xBix (x = 0, 10, 14) and ZnxSySe100-x-y (x = 2, y = 28; x = 4, y = 20; x = 6, y = 12; x = 8, y = 4) amorphous chalcogenide thin films prepared using thermal evaporation technique is estimated. The dielectric constant at incident and third harmonic wavelength is calculated using "PARAV" computer program. 1064 nm wavelength of Nd: YAG laser is incident on thin film and third harmonic signal at 355 nm wavelength alongwith fundamental light is obtained in reflection that is separated from 1064 nm using suitable optical filter. Reflected third harmonic signal is measured to trace the influence of Bi and Zn on third order nonlinear susceptibility and is found to increase with increase in Bi and Zn content in (GeSe3.5)100-xBix, and ZnxSySe100-x-y chalcogenide thin films respectively. The excellent optical nonlinear property shows the use of chalcogenide thin films in photonics for wavelength conversion and optical data processing.

THz waveguides, devices and hybrid polymer-chalcogenide photonic crystal fibers

DEFF Research Database (Denmark)

Bao, Hualong; Markos, Christos; Nielsen, Kristian

2014-01-01

In this contribution, we review our recent activities in the design, fabrication and characterization of polymer THz waveguides. Besides the THz waveguides, we finally will also briefly show some of our initial results on a novel hybrid polymer photonic crystal fiber with integrated chalcogenide...

On the instability effects in radiation-sensitive chalcogenide glasses

International Nuclear Information System (INIS)

Balitska, V.; Kovalskiy, A.; Shpotyuk, O.; Vakiv, M.

2007-01-01

The features of application of radiation-sensitive media based on chalcogenide glasses of As-Ge-S system for registration of high-energy γ-radiation are analysed. It is shown that compositional features of the observed time-instability effect should be taken into account in order to ensure a higher accuracy of the developed dosimeters

On the instability effects in radiation-sensitive chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Balitska, V. [Lviv State University for Vital Activity Safety, 35 Kleparivska str., Lviv, UA-79007 (Ukraine); Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Kovalskiy, A. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); International Materials Institute for New Functionality in Glass, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); International Materials Institute for New Functionality in Glass, Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States)], E-mail: shpotyuk@novas.lviv.ua; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)

2007-04-15

The features of application of radiation-sensitive media based on chalcogenide glasses of As-Ge-S system for registration of high-energy {gamma}-radiation are analysed. It is shown that compositional features of the observed time-instability effect should be taken into account in order to ensure a higher accuracy of the developed dosimeters.

Direct Electrospray Printing of Gradient Refractive Index Chalcogenide Glass Films.

Science.gov (United States)

Novak, Spencer; Lin, Pao Tai; Li, Cheng; Lumdee, Chatdanai; Hu, Juejun; Agarwal, Anuradha; Kik, Pieter G; Deng, Weiwei; Richardson, Kathleen

2017-08-16

A spatially varying effective refractive index gradient using chalcogenide glass layers is printed on a silicon wafer using an optimized electrospray (ES) deposition process. Using solution-derived glass precursors, IR-transparent Ge 23 Sb 7 S 70 and As 40 S 60 glass films of programmed thickness are fabricated to yield a bilayer structure, resulting in an effective gradient refractive index (GRIN) film. Optical and compositional analysis tools confirm the optical and physical nature of the gradient in the resulting high-optical-quality films, demonstrating the power of direct printing of multimaterial structures compatible with planar photonic fabrication protocols. The potential application of such tailorable materials and structures as they relate to the enhancement of sensitivity in chalcogenide glass based planar chemical sensor device design is presented. This method, applicable to a broad cross section of glass compositions, shows promise in directly depositing GRIN films with tunable refractive index profiles for bulk and planar optical components and devices.

Thermal, electronic and ductile properties of lead-chalcogenides under pressure.

Science.gov (United States)

Gupta, Dinesh C; Bhat, Idris Hamid

2013-09-01

Fully relativistic pseudo-potential ab-initio calculations have been performed to investigate the high pressure phase transition, elastic and electronic properties of lead-chalcogenides including the less known lead polonium. The calculated ground state parameters, for the rock-salt structure show good agreement with the experimental data. PbS, PbSe, PbTe and PbPo undergo a first-order phase transition from rock-salt to CsCl structure at 19.4, 15.5, 11.5 and 7.3 GPa, respectively. The elastic properties have also been calculated. The calculations successfully predicted the location of the band gap at L-point of Brillouin zone and the band gap for each material at ambient pressure. It is observed that unlike other lead-chalcogenides, PbPo is semi-metal at ambient pressure. The pressure variation of the energy gap indicates that these materials metalize under pressure. The electronic structures of these materials have been computed in parent as well as in high pressure B2 phase.

Reversibility windows in selenide-based chalcogenide glasses

International Nuclear Information System (INIS)

Shpotyuk, O.; Hyla, M.; Boyko, V.; Golovchak, R.

2008-01-01

A simple route for the estimation of the reversibility windows in the sense of non-ageing ability is developed for chalcogenide glasses obeying '8-N' rule at the example of As-Se, Ge-Se and Ge-As-Se glass systems. The low limit of their reversibility windows is determined at the average coordination number Z=2.4 in full agreement with rigidity percolation theory, while the upper limit is shown to be related to the glass preparation conditions and samples prehistory

Reversibility windows in selenide-based chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa, PL 42200 (Poland); Hyla, M. [Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa, PL 42200 (Poland); Boyko, V. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine); Lviv National Polytechnic University, 12, Bandera Street, Lviv, UA 79013 (Ukraine); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska Street, Lviv, UA 79031 (Ukraine)], E-mail: golovchak@novas.lviv.ua

2008-10-01

A simple route for the estimation of the reversibility windows in the sense of non-ageing ability is developed for chalcogenide glasses obeying '8-N' rule at the example of As-Se, Ge-Se and Ge-As-Se glass systems. The low limit of their reversibility windows is determined at the average coordination number Z=2.4 in full agreement with rigidity percolation theory, while the upper limit is shown to be related to the glass preparation conditions and samples prehistory.

The electronic structure of the antimony chalcogenide series: Prospects for optoelectronic applications

Energy Technology Data Exchange (ETDEWEB)

Carey, John J.; Allen, Jeremy P. [School of Chemistry and CRANN, Trinity College Dublin, Dublin 2 (Ireland); Scanlon, David O. [University College London, Kathleen Lonsdale Materials Chemistry, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Diamond Light Source Ltd., Diamond House, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom); Watson, Graeme W., E-mail: watsong@tcd.ie [School of Chemistry and CRANN, Trinity College Dublin, Dublin 2 (Ireland)

2014-05-01

In this study, density functional theory is used to evaluate the electronic structure of the antimony chalcogenide series. Analysis of the electronic density of states and charge density shows that asymmetric density, or ‘lone pairs’, forms on the Sb{sup III} cations in the distorted oxide, sulphide and selenide materials. The asymmetric density progressively weakens down the series, due to the increase in energy of valence p states from O to Te, and is absent for Sb{sub 2}Te{sub 3}. The fundamental and optical band gaps were calculated and Sb{sub 2}O{sub 3}, Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} have indirect band gaps, while Sb{sub 2}Te{sub 3} was calculated to have a direct band gap at Γ. The band gaps are also seen to reduce from Sb{sub 2}O{sub 3} to Sb{sub 2}Te{sub 3}. The optical band gap for Sb{sub 2}O{sub 3} makes it a candidate as a transparent conducting oxide, while Sb{sub 2}S{sub 3} and Sb{sub 2}Se{sub 3} have suitable band gaps for thin film solar cell absorbers. - Graphical abstract: A schematic illustrating the interaction between the Sb{sup III} cations and the chalcogenide anions and the change in their respective energy levels down the series. - Highlights: • The electronic structure of the antimony chalcogenide series is modelled using DFT. • Asymmetric density is present on distorted systems and absent on the symmetric telluride system. • Asymmetric density is formed from the mixing of Sb 5s and anion p states, where the anti-bonding combination is stabilised by the Sb 5p states. • The asymmetric density weakens down the series due to the increase in energy of chalcogenide p states. • The increase in energy of the anion p states reduces the fundamental and optical band gaps.

Deposition of Ge{sub 23}Sb{sub 7}S{sub 70} chalcogenide glass films by electrospray

Energy Technology Data Exchange (ETDEWEB)

Novak, Spencer, E-mail: spencen@g.clemson.edu [Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, SC (United States); College of Optics and Photonics, CREOL, University of Central FL (United States); Johnston, Danvers E.; Li, Cheng; Deng, Weiwei [Department of Mechanical and Aerospace Engineering, University of Central FL (United States); Richardson, Kathleen [Department of Materials Science and Engineering, COMSET, Clemson University, Clemson, SC (United States); College of Optics and Photonics, CREOL, University of Central FL (United States)

2015-08-03

Solution-based chalcogenide glass films, traditionally deposited by spin-coating, are attractive for their potential use in chip-based devices operating in the mid-infrared and for ease of nanostructure incorporation. To overcome limitations of spin-coating such as excessive material waste and difficulty for scale-up, this paper introduces electrospray as a film deposition technique for solution-based chalcogenide glasses. Electrospray is shown to produce Ge{sub 23}Sb{sub 7}S{sub 70} films with similar surface quality and optical properties as films deposited by spin-coating. The advantages of electrospray deposition for nanoparticle dispersion, scalable and continuous manufacturing with little material waste, and comparable film quality to spin-coating make electrospray a promising deposition method for practical applications of chalcogenide glass films. - Highlights: • Electrospray film deposition processing of Ge{sub 23}Sb{sub 7}S{sub 70} films was developed. • Traditional spin-coated films were also fabricated in parallel. • Optical properties and surface quality found to be similar between two approaches.

1D - photonic crystals prepared from the amorphous chalcogenide films

Czech Academy of Sciences Publication Activity Database

Kohoutek, T.; Orava, J.; Wágner, T.; Hrdlička, M.; Vlček, Milan; Frumar, M.

2009-01-01

Roč. 20, - (2009), S346-S350 ISSN 0957-4522. [International Conference of Optical and Optoelectronic Materials and Applications. London, 29.07.2007-03.08.2007] Institutional research plan: CEZ:AV0Z40500505 Keywords : chalcogenide thin films Subject RIV: CA - Inorganic Chemistry Impact factor: 1.020, year: 2009

A feasibility study of unconventional planar ligand spacers in chalcogenide nanocrystals.

Science.gov (United States)

Lukose, Binit; Clancy, Paulette

2016-05-18

The solar cell efficiency of chalcogenide nanocrystals (quantum dots) has been limited in the past by the insulation between neighboring quantum dots caused by intervening, often long-chain, aliphatic ligands. We have conducted a computationally based feasibility study to investigate the use of ultra-thin, planar, charge-conducting ligands as an alternative to traditional long passive ligands. Not only might these radically unconventional ligands decrease the mean distance between adjacent quantum dots, but, since they are charge-conducting, they have the potential to actively enhance charge migration. Our ab initio studies compare the binding energies, electronic energy gaps, and absorption characteristics for both conventional and unconventional ligands, such as phthalocyanines, porphyrins and coronene. This comparison identified these unconventional ligands with the exception of titanyl phthalocyanine, that bind to themselves more strongly than to the surface of the quantum dot, which is likely to be less desirable for enhancing charge transport. The distribution of finite energy levels of the bound system is sensitive to the ligand's binding site and the levels correspond to delocalized states. We also observed a trap state localized on a single Pb atom when a sulfur-containing phenyldithiocarbamate (PTC) ligand is attached to a slightly off-stoichiometric dot in a manner that the sulfur of the ligand completes stoichiometry of the bound system. Hence, this is indicative of the source of trap state when thio-based ligands are bound to chalcogenide nanocrystals. We also predict that titanyl phthalocyanine in a mix with chalcogenide dots of diameter ∼1.5 Å can form a donor-acceptor system.

Mid-infrared supercontinuum generation spanning more than 11 μm in a chalcogenide step-index fiber

DEFF Research Database (Denmark)

Petersen, Christian Rosenberg; Møller, Uffe Visbech; Kubat, Irnis

2015-01-01

Supercontinuum generation covering an ultra-broad spectrum from 1.5-11.7μm and 1.4-13.3μm is experimentally demonstrated by pumping an 85mm chalcogenide step-index fiber with 100fs pulses at a wavelength of 4.5μm and 6.3μm, respectively.......Supercontinuum generation covering an ultra-broad spectrum from 1.5-11.7μm and 1.4-13.3μm is experimentally demonstrated by pumping an 85mm chalcogenide step-index fiber with 100fs pulses at a wavelength of 4.5μm and 6.3μm, respectively....

Ultrafast Laser Fabrication of Bragg Waveguides in GLS Chalcogenide Glass

Directory of Open Access Journals (Sweden)

McMillen Ben

2013-11-01

Full Text Available We present work on the fabrication of Bragg waveguides in gallium-lanthanum-sulfide chalcogenide glass using an ultrafast laser. Waveguides were written with a single pass while modulating the writing beam. The spatial and temporal profile of the writing beam was ontrolled during waveguide fabrication in order to control the shape and size of the waveguide cross-section.

Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements

International Nuclear Information System (INIS)

Shpotyuk, O.; Ingram, A.; Shpotyuk, M.; Filipecki, J.

2014-01-01

Highlights: • Decisive role of specific chemical environment in free-volume correlations in glass. • Realistic free volumes in As–S/Se glass are defined by newly modified τ 2 -R formula. • Overestimated void sizes in chalcogenide glass as compared with molecular polymers. - Abstract: A newly modified correlation equation between defect-related positron lifetime determined within two-state trapping model and radius of corresponding free-volume-type defects was proposed to describe compositional variations in atomic-deficient structure of covalent-bonded chalcogenides like binary As–S/Se glasses. Specific chemical environment of free-volume voids around neighboring network-forming polyhedrons was shown to play a decisive role in this correlation, leading to systematically enhanced volumes in comparison with typical molecular substrates, such as polymers

Prediction of free-volume-type correlations in glassy chalcogenides from positron annihilation lifetime measurements

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O., E-mail: shpotyuk@novas.lviv.ua [Institute of Materials of SRC “Carat”, 212 Stryjska Str., Lviv 79031 (Ukraine); Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestcochowa 42200 (Poland); Ingram, A. [Opole University of Technology, 75 Ozimska Str., Opole 45370 (Poland); Shpotyuk, M. [Institute of Materials of SRC “Carat”, 212 Stryjska Str., Lviv 79031 (Ukraine); Lviv Polytechnic National University, 12 Bandery Str., Lviv 79013 (Ukraine); Filipecki, J. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestcochowa 42200 (Poland)

2014-11-01

Highlights: • Decisive role of specific chemical environment in free-volume correlations in glass. • Realistic free volumes in As–S/Se glass are defined by newly modified τ{sub 2}-R formula. • Overestimated void sizes in chalcogenide glass as compared with molecular polymers. - Abstract: A newly modified correlation equation between defect-related positron lifetime determined within two-state trapping model and radius of corresponding free-volume-type defects was proposed to describe compositional variations in atomic-deficient structure of covalent-bonded chalcogenides like binary As–S/Se glasses. Specific chemical environment of free-volume voids around neighboring network-forming polyhedrons was shown to play a decisive role in this correlation, leading to systematically enhanced volumes in comparison with typical molecular substrates, such as polymers.

Iron based pnictide and chalcogenide superconductors studied by muon spin spectroscopy

International Nuclear Information System (INIS)

Shermadini, Zurab

2014-01-01

In the present thesis the superconducting properties of the Iron-based Ba 1-x Rb x Fe 2 As 2 arsenides, and A x Fe 2-y Se 2 (A=Cs,Rb,K) chalcogenides are investigated by means of Muon Spin Rotation Spectroscopy. The temperature and pressure dependence of the magnetic penetration depth is obtained form μSR experiments and analyzed to probe the superconducting gap-symmetries for each samples. The Ba 1-x Rb x Fe 2 As 2 system is described within the multi-gap s+s-wave scenario and results are discussed in the light of the suppression of inter-band processes upon hole doping. Due to the lowered upper critical field B c2 and reduced T c , a large section of B-T-p phase diagram is studied for the hole-overdoped x=1 case. By applying hydrostatic pressure, the RbFe 2 As 2 system exhibits a classical BCS superconducting characteristics. The A x Fe 2-y Se 2 chalcogenide represents a system containing magnetically ordered and superconducting phases simultaneously. In all investigated chalcogenide samples, about 90% of the total volume show the strong antiferromagnetic phase and 10% exhibit a paramagnetic behavior. Magnetization measurements reveal a 100% Meissner effect, while μSR clearly indicates that the paramagnetic phase is a perfect superconductor. Up to now, there is no clear evidence whether the antiferromagnetic phase is also superconducting. The microscopic coexistence and/or phase separation of superconductivity and magnetism is discussed. Moreover, a new hydrostatic double-wall pressure cell is developed and produced, satisfying the demands of μSR experiments. The designs and characteristics of the new pressure cell are reviewed in the present thesis.

Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

Czech Academy of Sciences Publication Activity Database

Kostka, Petr; Zavadil, Jiří; Iovu, M.S.; Ivanova, Z. G.; Furniss, D.; Seddon, A.B.

2015-01-01

Roč. 648, NOV 5 (2015), s. 237-243 ISSN 0925-8388 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985891 ; RVO:67985882 Keywords : chalcogenide glasses * rare earth ions * low-temperature photoluminescence * optical transmission Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 3.014, year: 2015

Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung-Yun [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)], E-mail: seungyun@etri.re.kr; Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung-Gon; Kim, Sang-Hoon; Lee, Sang-Heung [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)

2007-10-31

The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.

Half-Metallic Ferromagnetism and Stability of Transition Metal Pnictides and Chalcogenides

Science.gov (United States)

Liu, Bang-Gui

It is highly desirable to explore robust half-metallic ferromagnetic materials compatible with important semiconductors for spintronic applications. A state-of-the-art full potential augmented plane wave method within the densityfunctional theory is reliable enough for this purpose. In this chapter we review theoretical research on half-metallic ferromagnetism and structural stability of transition metal pnictides and chalcogenides. We show that some zincblende transition metal pnictides are half-metallic and the half-metallic gap can be fairly wide, which is consistent with experiment. Systematic calculations reveal that zincblende phases of CrTe, CrSe, and VTe are excellent half-metallic ferromagnets. These three materials have wide half-metallic gaps, are low in total energy with respect to the corresponding ground-state phases, and, importantly, are structurally stable. Halfmetallic ferromagnetism is also found in wurtzite transition metal pnictides and chalcogenides and in transition-metal doped semiconductors as well as deformed structures. Some of these half-metallic materials could be grown epitaxially in the form of ultrathin .lms or layers suitable for real spintronic applications.

Pressure dependence of crystal field splitting in Pr pnictides and chalcogenides

International Nuclear Information System (INIS)

Schirber, J.E.; Weaver, H.T.; Ginley, D.S.

1978-01-01

We have measured the pressure dependence of the Pr nuclear magnetic resonance shift in PrN, PrP, PrSb, PrAs, PrS and PrSe. The shifts in all the pnictides increase while in the chalcogenides the shifts decrease with pressure. The rare earth frequency shift is inversely proportional to the crystal field splitting in the context of the point charge model (PCM) so a decrease would be expected for all of these materials at a rate of 5/3 the volume compressibility. Our values for the pnictides tend to be considerably larger than the PCM value as well as the wrong sign. The chalcogenide values are much nearer in magnitude and are of the right sign for the PCM. Contrary to the report of Guertin et al. we see no anomaly in the pressure dependence of the susceptibility of PrS. The fact that PrN which is reported to be non-metallic also shows the wrong sign for the PCM presents difficulties for various conduction electron explanations for this unexpected behavior of the pnictides

Formation of surface nanolayers in chalcogenide crystals using coherent laser beams

Science.gov (United States)

Ozga, K.; Fedorchuk, A. O.; El-Naggar, A. M.; Albassam, A. A.; Kityk, V.

2018-03-01

We have shown a possibility to form laser modified surface nanolayers with thickness up to 60 nm in some ternary chalcogenide crystals (Ag3AsS3, Ag3SbS3, Tl3SbS3) The laser treatment was performed by two coherent laser beams split in a space. As the inducing lasers we have applied continuous wave (cw) Hesbnd Cd laser at wavelength 441 nm and doubled frequency cw Nd: YAG laser at 532 nm. The spectral energies of these lasers were higher with respect to the energy gaps of the studied crystals. The optical anisotropy was appeared and defected by monitoring of birefringence at probing wavelength of cw Hesbnd Ne laser at λ = 3390 nm. The changes of the laser stimulated near the surface layer morphology was monitored by TEM and AFM methods as well as by the reflected optical second harmonic generation at fundamental wavelength of microsecond CO2 laser generating at wavelength 10600 nm. This technique may open a new approach for the formation of the near the surface nanolayers in chalcogenides using external cw laser illumination.

The Moessbauer effect in binary tin chalcogenides of tin 119

International Nuclear Information System (INIS)

Ortalli, I.; Fano, V.

1975-01-01

The values of the isomer shift, quadrupole splitting, Moessbauer coefficient, Debye temperature for the tin chalcogenides SnS. SnSe, SnTe are tabulated for the temperatures 80 and 300 K. Temperature dependences of the Moessbauer coefficient and of the effective Debye temperature for SnS, SnSe and SnTe in a temperature range of 78 to 300 K are presented. (Z.S.)

Generation and Applications of High Average Power Mid-IR Supercontinuum in Chalcogenide Fibers

OpenAIRE

Petersen, Christian Rosenberg

2016-01-01

Mid-infrared supercontinuum with up to 54.8 mW average power, and maximum bandwidth of 1.77-8.66 μm is demonstrated as a result of pumping tapered chalcogenide photonic crystal fibers with a MHz parametric source at 4 μm

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM{sub 2}InTe{sub 4} (M=Zn, Cd)

Energy Technology Data Exchange (ETDEWEB)

Nolas, George S., E-mail: gnolas@usf.edu [Department of Physics, University of South Florida, Tampa, FL 33620 (United States); Hassan, M. Shafiq; Dong, Yongkwan [Department of Physics, University of South Florida, Tampa, FL 33620 (United States); Martin, Joshua [Material Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899 (United States)

2016-10-15

Quaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn{sub 2}InSe{sub 4}. These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficient and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications. - Graphical abstract: The structural, optical and electrical properties of the quaternary chalcogenides CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. The unique crystal structure allows for relatively good electrical transports and therefore potential for thermoelectric applications. - Highlights: • The physical properties of CuZn{sub 2}InTe{sub 4} and CuCd{sub 2}InTe{sub 4} are reported for the first time. • These materials have potential for thermoelectric applications. • Their direct band gaps also suggest potential for photovoltaics applications.

Short and medium range structures of 80GeSe2–20Ga2Se3 chalcogenide glasses

Science.gov (United States)

Petracovschi, Elena; Calvez, Laurent; Cormier, Laurent; Le Coq, David; Du, Jincheng

2018-05-01

The short and medium range structures of 80GeSe2–20Ga2Se3 (or Ge23.5Ga11.8Se64.7) chalcogenide glasses have been studied by combining ab initio molecular dynamics (AIMD) simulations and experimental neutron diffraction studies. The structure factor and total correlation function were calculated from glass structures generated from AIMD simulations and compared with neutron diffraction experiments showing reasonable agreement. The atomic structures of ternary chalcogenide glasses were analyzed in detail, and it was found that gallium atoms are four-fold coordinated by selenium (Se) and form [GaSe4] tetrahedra. Germanium atoms on average also have four-fold coordination, among which Se is 3.5 with the remaining being Ge–Ge homo-nuclear bonds. Ga and Ge tetrahedra link together mainly through corner-sharing and some edge-sharing of Se. No homo-nuclear bonds were observed among Ga atoms or between Ge and Ga. In addition, Se–Se homo-nuclear bonds and Se chains with various lengths were observed. A small fraction of Se atom triclusters that bond to three cations of Ge and Ga were also observed, confirming earlier proposals from 77Se solid state nuclear magnetic resonance studies. Furthermore, the electronic structures of ternary chalcogenide glasses were studied in terms of atomic charge and electronic density of states in order to gain insights into the chemical bonding and electronic properties, as well as to provide an explanation of the observed atomic structures in these ternary chalcogenide glasses.

Structural and electronic properties of high pressure phases of lead chalcogenides

Science.gov (United States)

Petersen, John; Scolfaro, Luisa; Myers, Thomas

2012-10-01

Lead chalcogenides, most notably PbTe and PbSe, have become an active area of research due to their thermoelectric properties. The high figure of merit (ZT) of these materials has brought much attention to them, due to their ability to convert waste heat into electricity. Variation in synthesis conditions gives rise to a need for analysis of structural and thermoelectric properties of these materials at different pressures. In addition to the NaCl structure at ambient conditions, lead chalcogenides have a dynamic orthorhombic (Pnma) intermediate phase and a higher pressure yet stable CsCl phase. By altering the lattice constant, we simulate the application of external pressure; this has notable effects on ground state total energy, band gap, and structural phase. Using the General Gradient Approximation (GGA) in Density Functional Theory (DFT), we calculate the phase transition pressures by finding the differences in enthalpy from total energy calculations. For each phase, elastic constants, bulk modulus, shear modulus, Young's modulus, and hardness are calculated, using two different approaches. In addition to structural properties, we analyze the band structure and density of states at varying pressures, paying special note to thermoelectric implications.

Efficiency simulations of thin film chalcogenide photovoltaic cells for different indoor lighting conditions

International Nuclear Information System (INIS)

Minnaert, B.; Veelaert, P.

2011-01-01

Photovoltaic (PV) energy is an efficient natural energy source for outdoor applications. However, for indoor applications, the efficiency of PV cells is much lower. Typically, the light intensity under artificial lighting conditions is less than 10 W/m 2 as compared to 100-1000 W/m 2 under outdoor conditions. Moreover, the spectrum is different from the outdoor solar spectrum. In this context, the question arises whether thin film chalcogenide photovoltaic cells are suitable for indoor use. This paper contributes to answering that question by comparing the power output of different thin film chalcogenide solar cells with the classical crystalline silicon cell as reference. The comparisons are done by efficiency simulation based on the quantum efficiencies of the solar cells and the light spectra of typical artificial light sources i.e. an LED lamp, a 'warm' and a 'cool' fluorescent tube and a common incandescent and halogen lamp, which are compared to the outdoor AM 1.5 spectrum as reference.

Radiation-induced defects formation in Bi-containing vitreous chalcogenides

International Nuclear Information System (INIS)

Shpotyuk, O.; Vakiv, M.; Balitska, V.; Kovalskiy, A.

1997-01-01

Processes of formation and annihilation of coordination defects in As 2 Se 3 Bi y and (As 2 Se 3 )(Bi 2 Se 3 ) y amorphous chalcogenide semiconductors induced by influence of Co 60 gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As 2 Se 3 Bi y glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs

Investigations on the parent compounds of Fe-chalcogenide superconductors

International Nuclear Information System (INIS)

Koz, Cevriye

2015-01-01

This work is focused on the parent compounds of the Fe-chalcogenide superconductors. For this purpose poly- and single-crystalline forms of tetragonal β-Fe x Se, Fe 1+y Te, Fe 1+y Te 1-x Se x and Fe (1+y)-x M x Te (M = Ni, Co) have been prepared. Second focal points of this study are the low-temperature structural phase transitions and physical property changes in tetragonal Fe 1+y Te which are induced by composition, external pressure, and cationic substitution.

Neutron diffraction study on the medium and short-range order of ternary chalcogenide glasses

Czech Academy of Sciences Publication Activity Database

Neov, S.; Gerasimova, I.; Skordeva, E.; Arsova, D.; Pamukchieva, V.; Mikula, Pavol; Lukáš, Petr; Sonntag, R.

1999-01-01

Roč. 34, - (1999), s. 3669-3676 ISSN 0022-2461 R&D Projects: GA ČR GV202/97/K038 Keywords : neutron diffraction * short-range order * chalcogenide glasses Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.786, year: 1999

Multi-layered Chalcogenides with potential for magnetism and superconductivity

Energy Technology Data Exchange (ETDEWEB)

Li, Li, E-mail: lil2@ornl.gov [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Parker, David S. [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Cruz, Clarina R. dela [Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Sefat, Athena S., E-mail: sefata@ornl.gov [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

2016-12-15

Highlights: • A comprehensive study on multi-layered thallium copper chalcogenides TlCu{sub 2n}Ch{sub n+1}. • All the TlCu{sub 2n}Ch{sub n+1} exhibit metallic behaviors with no long-range magnetism. • Calculations suggest a lack of Fermi-level spectral weight for magnetic instability. • Our results suggest a likelihood of magnetism for multiple structural layers with Fe. - Abstract: Layered thallium copper chalcogenides can form single, double, or triple layers of Cu–Ch separated by Tl sheets. Here we report on the preparation and properties of Tl-based materials of TlCu{sub 2}Se{sub 2}, TlCu{sub 4}S{sub 3}, TlCu{sub 4}Se{sub 3} and TlCu{sub 6}S{sub 4}. Having no long-range magnetism for these materials is quite surprising considering the possibilities of inter- and intra-layer exchange interactions through Cu 3d, and we measure by magnetic susceptibility and confirm by neutron diffraction. First principles density-functional theory calculations for both the single-layer TlCu{sub 2}Se{sub 2} (isostructural to the ‘122’ iron-based superconductors) and the double-layer TlCu{sub 4}Se{sub 3} suggest a lack of Fermi-level spectral weight that is needed to drive a magnetic or superconducting instability. However, for multiple structural layers with Fe, there is much greater likelihood for magnetism and superconductivity.

Pinning down high-performance Cu-chalcogenides as thin-film solar cell absorbers: A successive screening approach

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yubo; Zhang, Wenqing, E-mail: wqzhang@mail.sic.ac.cn, E-mail: pzhang3@buffalo.edu [Materials Genome Institute and Department of Physics, Shanghai University, Shanghai 200444 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Youwei; Zhang, Jiawei; Xi, Lili [State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zhang, Peihong, E-mail: wqzhang@mail.sic.ac.cn, E-mail: pzhang3@buffalo.edu [Materials Genome Institute and Department of Physics, Shanghai University, Shanghai 200444 (China); Department of Physics, University at Buffalo, SUNY, Buffalo, New York 14260 (United States)

2016-05-21

Photovoltaic performances of Cu-chalcogenides solar cells are strongly correlated with the absorber fundamental properties such as optimal bandgap, desired band alignment with window material, and high photon absorption ability. According to these criteria, we carry out a successive screening for 90 Cu-chalcogenides using efficient theoretical approaches. Besides the well-recognized CuInSe{sub 2} and Cu{sub 2}ZnSnSe{sub 4} materials, several novel candidates are identified to have optimal bandgaps of around 1.0–1.5 eV, spike-like band alignments with CdS window layer, sharp photon absorption edges, and high absorption coefficients. These new systems have great potential to be superior absorbers for photovolatic applications if their carrrier transport and defect properties are properly optimized.

Diffusion of Ag ions under random potential barriers in silver-containing chalcogenide glasses

Czech Academy of Sciences Publication Activity Database

Stehlík, Štěpán; Shimakawa, K.; Wágner, T.; Frumar, M.

2012-01-01

Roč. 45, č. 20 (2012), s. 1-5 ISSN 0022-3727 Institutional research plan: CEZ:AV0Z10100521 Keywords : Ag ion diffusion * chalcogenide glass * Nyquist plots Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.528, year: 2012 http://iopscience.iop.org/0022-3727/45/20/205304/

Magnetic and electronic properties of Neptunium chalcogenides from GGA + U + SOC and DFT investigations

Energy Technology Data Exchange (ETDEWEB)

Khan, Wilayat [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: sosaid@alfaisal.edu [College of Science, Physics Department, Alfaisal University, Riyadh 11533 (Saudi Arabia)

2017-06-15

Highlights: • Electronic and magnetic properties of Neptunium chalcogenides were explored theoretically using DFT approach. • Spin orbit coupling and GGA + U approach described successfully the f–f coupling. • Np{sub 2}X{sub 5} ate metallic with high magnetic character due to the Neptunium. • Fermi surfaces of Np{sub 2}Te{sub 5} have shown a greater electrical conductivity compared to Np{sub 2}Se{sub 5} and Np{sub 2}S{sub 5}. - Abstract: First-principles calculations techniques were employed to explore the structural, electronic and magnetic properties of Neptunium chalcogenides (Np{sub 2}X{sub 5}, X = S, Se and Te). No experimental or theoretical studies of their physical properties have been previously reported in the literature. The presence of highly localized f states has requested the employment of the spin orbit coupling and GGA + U approach in order to describe correctly the f–f coupling. Np{sub 2}X{sub 5} was found metallic with high magnetic character due to the Neptunium presence. Fermi surfaces of Np{sub 2}Te{sub 5} have shown a greater electrical conductivity compared to Np{sub 2}Se{sub 5} and Np{sub 2}S{sub 5}. The magnetic moment was found to be between 13.24 and 13.92μ{sub B}, principally induced by Np f and d-orbitals as well as the spin-polarization of the chalcogenes (Te, Se, S) induced by Np. Neptunium chalcogenides have shown interesting magnetic properties and should be manipulated with precaution due to their radioactive properties.

Positronics of radiation-induced effects in chalcogenide glassy semiconductors

International Nuclear Information System (INIS)

Shpotyuk, O.; Kozyukhin, S. A.; Shpotyuk, M.; Ingram, A.; Szatanik, R.

2015-01-01

Using As 2 S 3 and AsS 2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models

Positronics of radiation-induced effects in chalcogenide glassy semiconductors

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Scientific Research Company “Carat” (Ukraine); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Shpotyuk, M. [Scientific Research Company “Carat” (Ukraine); Ingram, A. [Opole Technical University (Poland); Szatanik, R. [Opole University (Poland)

2015-03-15

Using As{sub 2}S{sub 3} and AsS{sub 2} glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.

A Self-Templating Scheme for the Synthesis of Nanostructured Transition Metal Chalcogenide Electrodes for Capacitive Energy Storage

KAUST Repository

Xia, Chuan

2015-06-11

Due to their unique structural features including well-defined interior voids, low density, low coefficients of thermal expansion, large surface area and surface permeability, hollow micro/nanostructured transition metal sulfides with high conductivity have been investigated as new class of electrode materials for pseudocapacitor applications. Herein, we report a novel self-templating strategy to fabricate well-defined single and double-shell NiCo2S4 hollow spheres, as a promising electrode material for pseudocapacitors. The surfaces of the NiCo2S4 hollow spheres consist of self-assembled 2D mesoporous nanosheets. This unique morphology results in a high specific capacitance (1257 F g-1 at 2 A g-1), remarkable rate performance (76.4% retention of initial capacitance from 2 A g-1 to 60 A g-1) and exceptional reversibility with a cycling efficiency of 93.8% and 87% after 10,000 and 20,000 cycles, respectively, at a high current density of 10 A g-1. The cycling stability of our ternary chalcogenides is comparable to carbonaceous electrode materials, but with much higher specific capacitance (higher than any previously reported ternary chalcogenide), suggesting that these unique chalcogenide structures have potential application in next-generation commercial pseudocapacitors.

The effect of oxygen impurity on the electronic and optical properties of calcium, strontium and barium chalcogenide compounds

International Nuclear Information System (INIS)

Dadsetani, M.; Beiranvand, R.

2010-01-01

Electronic and optical properties of calcium, strontium and barium chalcogenide compounds in NaCl structure are studied using the band structure results obtained through the full potential linearized augmented palne wave method. Different linear relationships are observed between theoretical band gap and 1/a 2 (where a is lattice constant) for calcium, strontium and barium chalcogenide compounds with and without oxygen, respectively. An abnormal behavior of electronic and optical properties are found for compounds containing oxygen. These effects are ascribed to the special properties of Ca-O, Sr-O and Ba-O bonds, which are different from chemical bonds between Ca, Sr and Ba and other chalcogen atoms.

The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting.

Science.gov (United States)

Li, Kexue; Liu, Lei; Yu, Peter Y; Chen, Xiaobo; Shen, D Z

2016-05-11

By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

Characterization and modeling of microstructured chalcogenide fibers for efficient mid-infrared wavelength conversion.

Science.gov (United States)

Xing, Sida; Grassani, Davide; Kharitonov, Svyatoslav; Billat, Adrien; Brès, Camille-Sophie

2016-05-02

We experimentally demonstrate wavelength conversion in the 2 µm region by four-wave mixing in an AsSe and a GeAsSe chalcogenide photonic crystal fibers. A maximum conversion efficiency of -25.4 dB is measured for 112 mW of coupled continuous wave pump in a 27 cm long fiber. We estimate the dispersion parameters and the nonlinear refractive indexes of the chalcogenide PCFs, establishing a good agreement with the values expected from simulations. The different fiber geometries and glass compositions are compared in terms of performance, showing that GeAsSe is a more suited candidate for nonlinear optics at 2 µm. Building from the fitted parameters we then propose a new tapered GeAsSe PCF geometry to tailor the waveguide dispersion and lower the zero dispersion wavelength (ZDW) closer to the 2 µm pump wavelength. Numerical simulations shows that the new design allows both an increased conversion efficiency and bandwidth, and the generation of idler waves further in the mid-IR regions, by tuning the pump wavelength in the vicinity of the fiber ZDW.

Electrical properties and figures of merit for new chalcogenide-based thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Schindler, J L; Hogan, T P; Brazis, P W; Kannewurf, C R; Chung, D Y; Kanatzidis, M G

1997-07-01

New Bi-based chalcogenide compounds have been prepared using the polychalcogenide flux technique for crystal growth. These materials exhibit characteristics of good thermoelectric materials. Single crystals of the compound CsBi{sub 4}Te{sub 6} have shown conductivity as high as 2440 S/cm with a p-type thermoelectric power of {approx}+110 {micro}V/K at room temperature. A second compound, {beta}-K{sub 2}Bi{sub 8}Se{sub 13} shows lower conductivity {approx}240 S/cm, but a larger n-type thermopower {approx}{minus}200 {micro}V/K. Thermal transport measurements have been performed on hot-pressed pellets of these materials and the results show comparable or lower thermal conductivities than Bi{sub 2}Te{sub 3}. This improvement may reflect the reduced lattice symmetry of the new chalcogenide thermoelectrics. The thermoelectric figure of merit for CsBi{sub 4}Te{sub 6} reaches ZT {approx} 0.32 at 260 K and for {beta}-K{sub 2}Bi{sub 8}Se{sub 13} ZT {approx} 0.32 at room temperature, indicating that these compounds are viable candidates for thermoelectric refrigeration applications.

Structural phase transition and elastic properties of mercury chalcogenides

Energy Technology Data Exchange (ETDEWEB)

Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Shriya, S. [School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001 (India); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique (LPQ3M), Departement de Technologie, Universite de Mascara, 29000 Mascara (Algeria)

2012-08-15

Pressure induced structural transition and elastic properties of ZnS-type (B3) to NaCl-type (B1) structure in mercury chalcogenides (HgX; X = S, Se and Te) are presented. An effective interionic interaction potential (EIOP) with long-range Coulomb, as well charge transfer interactions, Hafemeister and Flygare type short-range overlap repulsion extended up to the second neighbor ions and van der Waals interactions are considered. Emphasis is on the evaluation of the pressure dependent Poisson's ratio {nu}, the ratio R{sub BT/G} of B (bulk modulus) over G (shear modulus), anisotropy parameter, Shear and Young's modulus, Lame constant, Kleinman parameter, elastic wave velocity and thermodynamical property as Debye temperature. The Poisson's ratio behavior infers that Mercury chalcogenides are brittle in nature. To our knowledge this is the first quantitative theoretical prediction of the pressure dependence of elastic and thermodynamical properties explicitly the ductile (brittle) nature of HgX and still awaits experimental confirmations. Highlights: Black-Right-Pointing-Pointer Vast volume discontinuity in phase diagram infers transition from ZnS to NaCl structure. Black-Right-Pointing-Pointer The shear elastic constant C{sub 44} is nonzero confirms the mechanical stability. Black-Right-Pointing-Pointer Pressure dependence of {theta}{sub D} infers the softening of lattice with increasing pressure. Black-Right-Pointing-Pointer Estimated bulk, shear and tetragonal moduli satisfied elastic stability criteria. Black-Right-Pointing-Pointer In both B3 and B1 phases, C{sub 11} and C{sub 12} increase linearly with pressure.

Structural, optical and electrical properties of cadmium-doped lead chalcogenide (PbSe) thin films

International Nuclear Information System (INIS)

Khan, Shamshad A.; Khan, Zishan H.; El-Sebaii, A.A.; Al-Marzouki, F.M.; Al-Ghamdi, A.A.

2010-01-01

(PbSe) 100-x Cd x thin films of thickness 3000 A with variable concentrations of Cd (x=5, 10, 15 and 20) were prepared by thermal evaporation on glass substrates at room temperature at a base pressure of 10 -6 Torr. The structural, optical and electrical properties of these films were studied. X-ray diffraction patterns were used to determine the crystal structure of the films. Films were of polycrystalline texture over the whole range of study. Optical constants of all films were determined by absorbance and reflection measurements in a wavelength range 400-1200 nm. Analysis of the optical absorption data showed that the rule of direct transitions predominates. The values of the absorption coefficient (α), extinction coefficient (k) and imaginary part of the dielectric constant were found to increase with increasing Cd content in lead chalcogenides while the refractive index (n) and real part of dielectric constant were increased with increasing Cd concentration up to 15% and then they decreased with 20% of Cd content in PbSe. These results were interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The dc conductivities and activation energies of the films were measured in the temperature range 298-398 K. It was observed that the dc conductivity increases at all temperatures with the increase of Cd content in lead chalcogenide system. The experimental data suggests that the conduction is due to the thermally assisted tunneling of the carriers in the localized states near the band edges. The activation energy and optical band gap were found to decrease with increasing Cd concentration in lead chalcogenide.

Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

International Nuclear Information System (INIS)

Shpotyuk, O.

1997-01-01

The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author)

Radiation-induced defects formation in Bi-containing vitreous chalcogenides

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O.; Vakiv, M.; Balitska, V.; Kovalskiy, A. [Institute of Materials, Lvov (Ukraine)

1997-12-01

Processes of formation and annihilation of coordination defects in As{sub 2}Se{sub 3}Bi{sub y} and (As{sub 2}Se{sub 3})(Bi{sub 2}Se{sub 3}){sub y} amorphous chalcogenide semiconductors induced by influence of Co{sup 60} gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As{sub 2}Se{sub 3}Bi{sub y} glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs.

Electrochemical kinetics and X-ray absorption spectroscopy investigations of select chalcogenide electrocatalysts for oxygen reduction reaction applications

International Nuclear Information System (INIS)

Ziegelbauer, Joseph M.; Murthi, Vivek S.; O'Laoire, Cormac; Gulla, Andrea F.; Mukerjee, Sanjeev

2008-01-01

Transition metal-based chalcogenide electrocatalysts exhibit a promising level of performance for oxygen reduction reaction applications while offering significant economic benefits over the state of the art Pt/C systems. The most active materials are based on Ru x Se y clusters, but the toxicity of selenium will most likely limit their embrace by the marketplace. Sulfur-based analogues do not suffer from toxicity issues, but suffer from substantially less activity and stability than their selenium brethren. The structure/property relationships that result in these properties are not understood due to ambiguities regarding the specific morphologies of Ru x S y -based chalcogenides. To clarify these properties, an electrochemical kinetics study was interpreted in light of extensive X-ray diffraction, scanning electron microscopy, and in situ X-ray absorption spectroscopy evaluations. The performance characteristics of ternary M x Ru y S z /C (M = Mo, Rh, or Re) chalcogenide electrocatalysts synthesized by the now-standard low-temperature nonaqueous (NA) route are compared to commercially available (De Nora) Rh- and Ru-based systems. Interpretation of performance differences is made in regards to bulk and surface properties of these systems. In particular, the overall trends of the measured activation energies in respect to increasing overpotential and the gross energy values can be explained in regards to these differences

Effect of the Copper on Thermo - Mechanical and Optical Properties of S-Se-Cu Chalcogenide Glasses

Science.gov (United States)

Samudrala, Kavitha; Babu Devarasetty, Suresh

2018-03-01

The S15Se85-xCux (x = 0, 2, 4, 6, 8) chalcogenide glasses are synthesized using melt quenching technique and the effect of Copper on thermal, mechanical and optical properties of chalcogenide glasses are investigated. The glassy natures of the prepared samples were verified by X-ray diffraction and DSC studies. The optical band gap of the samples is estimated and it is observed that optical band gap is decreased with increasing of the copper content and is discussed in terms of cohesive energy and coordination number. The basic thermo-mechanical parameters such as micro-hardness, Volume (Vh) and formation energy (Eh) of micro voids in the glassy network and the modulus of Elasticity (E) are calculated in present glasses. The composition dependence of micro hardness is discussed in terms of heat of atomization energy.

Chalcogenide glass-on-graphene photonics

Science.gov (United States)

Lin, Hongtao; Song, Yi; Huang, Yizhong; Kita, Derek; Deckoff-Jones, Skylar; Wang, Kaiqi; Li, Lan; Li, Junying; Zheng, Hanyu; Luo, Zhengqian; Wang, Haozhe; Novak, Spencer; Yadav, Anupama; Huang, Chung-Che; Shiue, Ren-Jye; Englund, Dirk; Gu, Tian; Hewak, Daniel; Richardson, Kathleen; Kong, Jing; Hu, Juejun

2017-12-01

Two-dimensional (2D) materials are of tremendous interest to integrated photonics, given their singular optical characteristics spanning light emission, modulation, saturable absorption and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. Here, we present a new route for 2D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material that can be directly deposited and patterned on a wide variety of 2D materials and can simultaneously function as the light-guiding medium, a gate dielectric and a passivation layer for 2D materials. Besides achieving improved fabrication yield and throughput compared with the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light-matter interactions in the 2D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared waveguide-integrated photodetectors and modulators.

Trends in oxygen reduction and methanol activation on transition metal chalcogenides

DEFF Research Database (Denmark)

Tritsaris, Georgios; Nørskov, Jens Kehlet; Rossmeisl, Jan

2011-01-01

We use density functional theory calculations to study the oxygen reduction reaction and methanol activation on selenium and sulfur-containing transition metal surfaces. With ruthenium selenium as a starting point, we study the effect of the chalcogen on the activity, selectivity and stability...... of the catalyst. Ruthenium surfaces with moderate content of selenium are calculated active for the oxygen reduction reaction, and insensitive to methanol. A significant upper limit for the activity of transition metal chalcogenides is estimated....

Angle-resolved photoemission spectroscopy on iron-chalcogenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Maletz, Janek; Zabolotnyy, Volodymyr; Evtushinsky, Daniil; Thirupathaiah, Setti; Wolter-Giraud, Anja; Harnagea, Luminita; Kordyuk, Alexander; Borisenko, Sergey [IFW Dresden (Germany); Yaresko, Alexander [MPI-FKF, Stuttgart (Germany); Vasiliev, Alexander [Moscow State University (Russian Federation); Chareev, Dimitri [RAS, Chernogolovka (Russian Federation); Rienks, Emile [Helmholtz-Zentrum Berlin (Germany); Buechner, Bernd [IFW Dresden (Germany); TU Dresden (Germany); Shermadini, Zurab; Luetkens, Hubertus; Sedlak, Kamil; Khasanov, Rustem; Amato, Alex; Krzton-Maziopa, Anna; Conder, Kazimierz; Pomjakushina, Ekaterina [Paul Scherrer Institute (Switzerland); Klauss, Hans-Henning [TU Dresden (Germany)

2014-07-01

The electronic structure of the iron chalcogenide superconductors FeSe{sub 1-x} and Rb{sub 0.77}Fe{sub 1.61}Se{sub 2} was investigated by high-resolution angle-resolved photoemission spectroscopy (ARPES). The results were compared to DFT calculations and μSR measurements. Both compounds share ''cigar-shaped'' Fermi surface sheets in their electronic structure, that can be found in almost all iron-pnictide superconductors. These features originate from a strong interplay of two hole- and electron-like bands in the Brillouin zone center, leading to a pronounced singularity in the density of states just below the Fermi level. This facilitates the coupling to a bosonic mode responsible for superconductivity.

Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Pedagogical University, Czestochowa (Poland)]|[Institute of Materials, Lvov (Ukraine)

1997-12-31

The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author). 16 refs, 1 tab.

Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

International Nuclear Information System (INIS)

Shpotyuk, Oleh; Filipecki, Jacek; Shpotyuk, Mykhaylo

2013-01-01

Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As 2 S 3 chalcogenide glassy semiconductors after γ-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As 4 + ; S 1 - ) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As 2 S 3 is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Chalcogenide Glass Radiation Sensor; Materials Development, Design and Device Testing

Energy Technology Data Exchange (ETDEWEB)

Mitkova, Maria; Butt, Darryl; Kozicki, Michael; Barnaby, Hugo

2013-04-30

For many decades, various radiation detecting material have been extensively researched, to find a better material or mechanism for radiation sensing. Recently, there is a growing need for a smaller and effective material or device that can perform similar functions of bulkier Geiger counters and other measurement options, which fail the requirement for easy, cheap and accurate radiation dose measurement. Here arises the use of thin film chalcogenide glass, which has unique properties of high thermal stability along with high sensitivity towards short wavelength radiation. The unique properties of chalcogenide glasses are attributed to the lone pair p-shell electrons, which provide some distinctive optical properties when compared to crystalline material. These qualities are derived from the energy band diagram and the presence of localized states in the band gap. Chalcogenide glasses have band tail states and localized states, along with the two band states. These extra states are primarily due to the lone pair electrons as well as the amorphous structure of the glasses. The localized states between the conductance band (CB) and valence band (VB) are primarily due to the presence of the lone pair electrons, while the band tail states are attributed to the Van der Waal's forces between layers of atoms [1]. Localized states are trap locations within the band gap where electrons from the valence band can hop into, in their path towards the conduction band. Tail states on the other hand are locations near the band gap edges and are known as Urbach tail states (Eu). These states are occupied with many electrons that can participate in the various transformations due to interaction with photons. According to Y. Utsugi et. al.[2], the electron-phonon interactions are responsible for the generation of the Urbach tails. These states are responsible for setting the absorption edge for these glasses and photons with energy near the band gap affect these states. We have

Fe-Cluster Compounds of Chalcogenides: Candidates for Rare-Earth-Free Permanent Magnet and Magnetic Nodal-Line Topological Material.

Science.gov (United States)

Zhao, Xin; Wang, Cai-Zhuang; Kim, Minsung; Ho, Kai-Ming

2017-12-04

Fe-cluster-based crystal structures are predicted for chalcogenides Fe 3 X 4 (X = S, Se, Te) using an adaptive genetic algorithm. Topologically different from the well-studied layered structures of iron chalcogenides, the newly predicted structures consist of Fe clusters that are either separated by the chalcogen atoms or connected via sharing of the vertex Fe atoms. Using first-principles calculations, we demonstrate that these structures have competitive or even lower formation energies than the experimentally synthesized Fe 3 X 4 compounds and exhibit interesting magnetic and electronic properties. In particular, we show that Fe 3 Te 4 can be a good candidate as a rare-earth-free permanent magnet and Fe 3 S 4 can be a magnetic nodal-line topological material.

Surface morphology of spin-coated As-S-Se chalcogenide thin films

Czech Academy of Sciences Publication Activity Database

Kohoutek, T.; Wágner, T.; Orava, J.; Krbal, M.; Fejfar, Antonín; Mates, Tomáš; Kasap, S. O.; Frumar, M.

2007-01-01

Roč. 353, - (2007), s. 1437-1440 ISSN 0022-3093 R&D Projects: GA AV ČR IAA1010316; GA AV ČR IAA1010413 Grant - others:GA ČR(CZ) GA203/05/0524; GAMŠk(CZ) LC523 Program:LC Institutional research plan: CEZ:AV0Z10100521 Keywords : chemical properties * spin coating * infrared glasses * chalcogenides * atomic force and scanning tunneling microscopy * scanning electron microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.319, year: 2007

Hydrogen treatment as a detergent of electronic trap states in lead chalcogenide nanoparticles

Science.gov (United States)

Voros, Marton; Brawand, Nicholas; Galli, Giulia

Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations, irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial for charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Our findings suggest that post-synthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films. Work supported by the Center for Advanced Solar Photophysics, an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences (NB) and U.S. DOE under Contract No. DE-AC02-06CH11357 (MV).

Locally formation of Ag nanoparticles in chalcogenide phase change thin films induced by nanosecond laser pulses

International Nuclear Information System (INIS)

Huang, Huan; Zhang, Lei; Wang, Yang; Han, Xiaodong; Wu, Yiqun; Zhang, Ze; Gan, Fuxi

2012-01-01

A simple method to optically synthesize Ag nanoparticles in Ge 2 Sb 2 Te 5 phase change matrix is described. The fine structures of the locally formed phase change chalcogenide nanocomposite are characterized by high-resolution transmission electron microscopy. The formation mechanism of the nanocomposite is discussed with temperature evolution and distribution simulations. This easy-prepared metal nano-particle-embedded phase change microstructure will have great potential in nanophotonics applications, such as for plasmonic functional structures. This also provides a generalized approach to the preparation of well-dispersed nanoparticle-embedded composite thin films in principle. -- Highlights: ► We describe a method to prepare chalcogenide microstructures with Ag nanoparticles. ► We give the fine structural images of phase change nanocomposites. ► We discuss the laser-induced fusion mechanism by temperature simulation. ► This microstructure will have great potential in nanophotonics applications.

Copper Antimony Chalcogenide Thin Film PV Device Development

Energy Technology Data Exchange (ETDEWEB)

Welch, Adam W.; Baranowski, Lauryn L.; de Souza Lucas, Francisco Willian; Toberer, Eric S.; Wolden, Colin A.; Zakutayev, Andriy

2015-06-14

Emerging ternary chalcogenide thin film solar cell technologies, such as CuSbS2 and CuSbSe2, have recently attracted attention as simpler alternatives to quaternary Cu2ZnSnS4 (CZTS). Despite suitable photovoltaic properties, the initial energy conversion efficiency of CuSbS2 is rather low (0.3%). Here, we report on our progress towards improving the efficiency of CuSbS2 solar cells using a high throughput approach. The combinatorial methodology quickly results in baseline solar cell prototypes with 0.6% efficiency, and then modification of the back contact architecture leads to 1% PV devices. We then translate the optimal CuSbS2 synthesis parameters to CuSbSe2 devices, which show 3% efficiencies.

Origin of the frequency shift of Raman scattering in chalcogenide glasses

DEFF Research Database (Denmark)

Han, X.C.; Tao, H.Z.; Gong, L.J.

2014-01-01

of the shift is associated with the topological connectivity of global network and/or the local environment of structural units, (e.g., tetrahedral GeSe4). Here we show the compositional evolution of the main Raman scattering frequency in Ge(SxSe1−x)2 glasses, and then clarify its structural origin. We keep...... units such as GeS4 tetrahedra. The ab-initio calculations of normal Raman mode combined with group theory analysis provide insight into the structural evolution of chalcogenide glasses with varying composition....

Extraction and recovery of mercury and lead from aqueous waste streams using redox-active layered metal chalcogenides. Annual progress report, September 15, 1996 - September 14, 1997

International Nuclear Information System (INIS)

Dorhout, P.K.; Strauss, S.H.

1997-01-01

'The authors have begun to examine the extraction and recovery of heavy elements from aqueous waste streams using redox-active metal chalcogenides. They have been able to prepare extractants from known chalcogenide starting materials, studied the efficacy of the extractants for selective removal of soft metal ions from aqueous phases, studied the deactivation of extractants and the concomitant recovery of soft metal ions from the extractants, and characterized all of the solids and solutions thus far in the study. The study was proposed as two parallel tasks: Part 1 and Part 2 emphasize the study and development of known metal chalcogenide extractants and the synthesis and development of new metal chalcogenide extractants, respectively. The two tasks were divided into sub-sections that study the extractants and their chemistry as detailed below: Preparation and reactivity of metal chalcogenide host solids Extraction of target waste (guest) ions from simulated waste streams Examination of the guest-host solids recovery of the guest metal and reuse of extractant Each section of the two tasks was divided into focused subsections that detail the specific problems and solutions to those problems that were proposed. The extent to which those tasks have been accomplished and the continued efforts of the team are described in detail below. (b) Progress and Results. The DOE-supported research has proceeded largely as proposed and has been productive in its first 12 months. Two full-paper manuscripts were submitted and are currently under peer review. A third paper is in preparation and will be submitted shortly. In addition, 5 submitted or invited presentations have been made.'

Effect of pressure on the crystal field splitting in rare earth pnictides and chalcogenides

International Nuclear Information System (INIS)

Schirber, J.E.; Weaver, H.T.

1978-01-01

The experimental situation for the pressure dependence of the crystal field of praseodymium pnictides and chalcogenides is reviewed and compared with the predictions of the point charge model. The problem of separating exchange and crystal field contributions from the measured NMR frequency shift or susceptibility measurements is discussed as well as problems explaining these effects with conduction electron related models

Thermoelectric performance of tellurium-reduced quaternary p-type lead–chalcogenide composites

International Nuclear Information System (INIS)

Aminorroaya Yamini, Sima; Wang, Heng; Gibbs, Zachary M.; Pei, Yanzhong; Mitchell, David R.G.; Dou, Shi Xue; Snyder, G. Jeffrey

2014-01-01

Graphical abstract: - Abstract: A long-standing technological challenge to the widespread application of thermoelectric generators is obtaining high-performance thermoelectric materials from abundant elements. Intensive study on PbTe alloys has resulted in a high figure of merit for the single-phase ternary PbTe–PbSe system through band structure engineering, and the low thermal conductivity achieved due to nanostructuring leads to high thermoelectric performance for ternary PbTe–PbS compounds. Recently, the single-phase p-type quaternary PbTe–PbSe–PbS alloys have been shown to provide thermoelectric performance superior to the binary and ternary lead chalcogenides. This occurs via tuning of the band structure and from an extraordinary low thermal conductivity resulting from high-contrast atomic mass solute atoms. Here, we present the thermoelectric efficiency of nanostructured p-type quaternary PbTe–PbSe–PbS composites and compare the results with corresponding single-phase quaternary lead chalcogenide alloys. We demonstrate that the very low lattice thermal conductivity achieved is attributed to phonon scattering at high-contrast atomic mass solute atoms rather than from the contribution of secondary phases. This results in a thermoelectric efficiency of ∼1.4 over a wide temperature range (650–850 K) in a p-type quaternary (PbTe) 0.65 (PbSe) 0.1 (PbS) 0.25 composite that is lower than that of single-phase (PbTe) 0.85 (PbSe) 0.1 (PbS) 0.05 alloy without secondary phases

Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

Science.gov (United States)

Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

2001-01-01

The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

Microbial synthesis of chalcogenide semiconductor nanoparticles: a review.

Science.gov (United States)

Jacob, Jaya Mary; Lens, Piet N L; Balakrishnan, Raj Mohan

2016-01-01

Chalcogenide semiconductor quantum dots are emerging as promising nanomaterials due to their size tunable optoelectronic properties. The commercial synthesis and their subsequent integration for practical uses have, however, been contorted largely due to the toxicity and cost issues associated with the present chemical synthesis protocols. Accordingly, there is an immediate need to develop alternative environment-friendly synthesis procedures. Microbial factories hold immense potential to achieve this objective. Over the past few years, bacteria, fungi and yeasts have been experimented with as eco-friendly and cost-effective tools for the biosynthesis of semiconductor quantum dots. This review provides a detailed overview about the production of chalcogen-based semiconductor quantum particles using the inherent microbial machinery. © 2015 The Authors. Microbial Biotechnology published by John Wiley & Sons Ltd and Society for Applied Microbiology.

Achievements in the field of thermophysics of pniktides and chalcogenides of transition elements

International Nuclear Information System (INIS)

Westrum, E.F.

1979-01-01

Thermophysical aspects of thermodynamics of chalcogenides of transition metals are analyzed briefly with the aim of development of concepts on connection of these compounds entropy with their structure, expressed by Grenvold and Westrum in 1962. In a more detail way discussed are the achievement in the field of low-temperature thermophysics of pniktides of transition metals permitting to consider the similarity and the differences in properties of the two compound classes mentioned above. The characteristics of chalcogenides and pniktides, obtained by the method of low-temperature calorimetry and by the method of high-temperature adiabatic calorimetry as well, are considered. A more detail estimate is made of the heat capacity component caused by expansion (that is of the most importance while considering the high-temperature data on heat capacity). The effect of energy levels of ions and atoms on heat capacity and a number of other problems are also considered. The approach to solution of these problems is illustrated on experimental data for a number of compounds, such as marcasite (FeS 2 ), low-temperature digenite (Csub(1.80)S), CoFe 2 , arsenides and antimonides of a number of metals (FeSb 2 , CrSb 2 , CrAs 2 , U 2 As 4 , U 3 Sb 4 , USb 2 , UAs 2 )

Structural, optical and electrical characterization of Ag doped lead chalcogenide (PbSe) thin films

Energy Technology Data Exchange (ETDEWEB)

Al-Ghamdi, A.A., E-mail: aghamdi90@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Al-Heniti, S. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrew' s College, Gorakhpur, UP (India)

2013-03-15

Research and development efforts are currently underway to fabricate a variety of solid state devices. A good deal of information regarding the synthesis, structural, optical and electrical properties of Ag doped lead chalcogenides have been revealed. The bulk polycrystalline (PbSe){sub 100-x}Ag{sub x} ternary chalcogenides are prepared by diffusion technique. The XRD patterns recorded for the (PbSe){sub 100-x}Ag{sub x} thin films prepared by vacuum deposition technique, show that these films are polycrystalline in nature. The optical measurements reveal that the (PbSe){sub 100-x}Ag{sub x} thin films possess direct band gap and the band gap energy decreases with an increase of Ag concentration. The extinction coefficient (k) and refractive index (n) are found to be changing by increasing Ag concentration in PbSe. These results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The dc conductivities of (PbSe){sub 100-x}Ag{sub x} thin films are measured in temperature range 303-403 K. It is observed that the dc conductivity increases at all the temperatures with an increase of Ag content in PbSe system. The experimental data suggests that the conduction is due to thermally assisted tunneling of the charge carriers in the localized states near the band edges. The activation energy and optical band gap are found to decrease with increasing Ag concentration in lead chalcogenide and there are good agreements between these two values. - Highlights: Black-Right-Pointing-Pointer (PbSe){sub 100-x}Ag{sub x} thin films has been investigated. Black-Right-Pointing-Pointer Polycrystalline nature has been verified by X-ray diffraction. Black-Right-Pointing-Pointer Optical absorption data showed the rules of direct transitions predominate. Black-Right-Pointing-Pointer Dc conductivity increases with an increase of Ag content in PbSe system. Black-Right-Pointing-Pointer Increase of Ag concentration causes a decrease in E{sub g

Chalcogenide metal centers for oxygen reduction reaction: Activity and tolerance

International Nuclear Information System (INIS)

Feng Yongjun; Gago, Aldo; Timperman, Laure; Alonso-Vante, Nicolas

2011-01-01

This mini-review summarizes materials design methods, oxygen reduction kinetics, tolerance to small organic molecules and fuel cell performance of chalcogenide metal catalysts, particularly, ruthenium (Ru x Se y ) and non-precious transition metals (M x X y : M = Co, Fe and Ni; X = Se and S). These non-platinum catalysts are potential alternatives to Pt-based catalysts because of their comparable catalytic activity (Ru x Se y ), low cost, high abundance and, in particular, a high tolerance to small organic molecules. Developing trends of synthesis methods, mechanism of oxygen reduction reaction and applications in direct alcohol fuel cells as well as the substrate effect are highlighted.

Advances in Mid-IR Fiber Lasers: Tellurite, Fluoride and Chalcogenide

Directory of Open Access Journals (Sweden)

Mario Christian Falconi

2017-06-01

Full Text Available A review on the recent progress in modeling and fabrication of medium infrared (Mid-IR fiber lasers is reported. The main objective is to illustrate some recent examples of continuous wave optical sources at wavelengths longer than those commonly employed in telecom applications and allowing high beam quality. A small number of Mid-IR lasers, among the large variety of schemes, glasses, dopants and pumping schemes reported in literature, is selected on the basis of their slope efficiency and threshold pump power. In particular, tellurite, fluoride and chalcogenide fiber lasers are considered. More details are given with reference to the novel pumping schemes.

Recent Advances in Metal Chalcogenides (MX; X = S, Se) Nanostructures for Electrochemical Supercapacitor Applications: A Brief Review

Science.gov (United States)

Theerthagiri, Jayaraman; Durai, Govindarajan; Rana, Abu ul Hassan Sarwar; Sangeetha, Kirubanandam; Kuppusami, Parasuraman; Kim, Hyun-Seok

2018-01-01

Supercapacitors (SCs) have received a great deal of attention and play an important role for future self-powered devices, mainly owing to their higher power density. Among all types of electrical energy storage devices, electrochemical supercapacitors are considered to be the most promising because of their superior performance characteristics, including short charging time, high power density, safety, easy fabrication procedures, and long operational life. An SC consists of two foremost components, namely electrode materials, and electrolyte. The selection of appropriate electrode materials with rational nanostructured designs has resulted in improved electrochemical properties for high performance and has reduced the cost of SCs. In this review, we mainly spotlight the non-metallic oxide, especially metal chalcogenides (MX; X = S, Se) based nanostructured electrode materials for electrochemical SCs. Different non-metallic oxide materials are highlighted in various categories, such as transition metal sulfides and selenides materials. Finally, the designing strategy and future improvements on metal chalcogenide materials for the application of electrochemical SCs are also discussed. PMID:29671823

Mid-infrared supercontinuum generation in chalcogenide step-index fibers pumped at 2.9 and 4.5µm

DEFF Research Database (Denmark)

Kubat, Irnis; Agger, Christian; Møller, Uffe Visbech

The Mid-InfraRed (MIR) spectral range (2-12µm) contains the spectral fingerprint of many organic molecules, which can be probed nondestructively for e.g. detection of skin cancer. For this SuperContinuum (SC) laser sources are good candidates since they can have broadband bandwidths together...... with high spectral densities. Here we consider a MIR SC laser sources based on chalcogenide step-index fibers with exceptionally high numerical aperture of ~1 pumped either with Er:ZBLAN and Pr:CHALC fiber laser operating at 2.9 and 4.5µm, respectively, having P0=1kW, T0=50ps, ν_R=4MHz and Pavg=200m......W. The optical properties of fibers (dispersion, nonlinearity and confinement loss) are modeled using the finite element tools based on measured refractive indices of the core and the cladding chalcogenide compositions. Generation of MIR SC is investigated using the Generalized Nonlinear Schrödinger Equation...

Solution processing of chalcogenide materials using thiol-amine "alkahest" solvent systems.

Science.gov (United States)

McCarthy, Carrie L; Brutchey, Richard L

2017-05-02

Macroelectronics is a major focus in electronics research and is driven by large area applications such as flat panel displays and thin film solar cells. Innovations for these technologies, such as flexible substrates and mass production, will require efficient and affordable semiconductor processing. Low-temperature solution processing offers mild deposition methods, inexpensive processing equipment, and the possibility of high-throughput processing. In recent years, the discovery that binary "alkahest" mixtures of ethylenediamine and short chain thiols possess the ability to dissolve bulk inorganic materials to yield molecular inks has lead to the wide study of such systems and the straightforward recovery of phase pure crystalline chalcogenide thin films upon solution processing and mild annealing of the inks. In this review, we recount the work that has been done toward elucidating the scope of this method for the solution processing of inorganic materials for use in applications such as photovoltaic devices, electrocatalysts, photodetectors, thermoelectrics, and nanocrystal ligand exchange. We also take stock of the wide range of bulk materials that can be used as soluble precursors, and discuss the work that has been done to reveal the nature of the dissolved species. This method has provided a vast toolbox of over 65 bulk precursors, which can be utilized to develop new routes to functional chalcogenide materials. Future studies in this area should work toward a better understanding of the mechanisms involved in the dissolution and recovery of bulk materials, as well as broadening the scope of soluble precursors and recoverable functional materials for innovative applications.

Zinc Antimonides and Copper Chalcogenides as Thermoelectric Materials

DEFF Research Database (Denmark)

Blichfeld, Anders Bank

2017-01-01

, and linked with the physical properties. The materials crystallography approach, relating physical properties with a structural understating, has been applied in this thesis for two highly interesting materials systems, zinc antimonides and copper chalcogenides. Both of these systems are high profiled....... The preparation parameters used, have a large influence on the homogeneity of the products, and new electric phases were identified and studied for ZnSb. For the samples prepared by physical vapor deposition, the growth takes place under non-thermodynamic conditions, making it possible to access kinetically...... intensity X-ray radiation at large international facilities, making it possible to measure pair distribution function data directly on thin-film samples in a normal incident setup, termed tfPDF. The tfPDF method was demonstrated on the iron antimony system. tfPDF was developed even further to include...

Hydrazine-hydrothermal method to synthesize three-dimensional chalcogenide framework for photocatalytic hydrogen generation

International Nuclear Information System (INIS)

Liu Yi; Kanhere, Pushkar D.; Wong, Chui Ling; Tian Yuefeng; Feng Yuhua; Boey, Freddy; Wu, Tom; Chen Hongyu; White, Tim J.; Chen Zhong; Zhang Qichun

2010-01-01

A novel chalcogenide, [Mn 2 Sb 2 S 5 (N 2 H 4 ) 3 ] (1), has been synthesized by the hydrazine-hydrothermal method. X-ray crystallography study reveals that the new compound 1 crystallizes in space group P1-bar (no. 2) of the triclinic system. The structure features an open neutral three-dimensional framework, where two-dimensional mesh-like inorganic layers are bridged by intra- and inter-layer hydrazine ligands. Both two Mn1 and Mn2 sites adopt distorted octahedral coordination. While two Sb1 and Sb2 sites exhibit two different coordination geometries, the Sb1 site is coordinated with three S atoms to generate a SbS 3 trigonal-pyramidal geometry, and the Sb2 site adopts a SbS 4 trigonal bipyramidal coordination geometry. It has an optical band gap of about ∼2.09 eV, which was deduced from the diffuse reflectance spectrum, and displays photocatalytic behaviors under visible light irradiation. Magnetic susceptibility measurements show compound 1 obeys the Curie-Weiss law in the range of 50-300 K. -- Graphical abstract: A novel chalcogenide, [Mn 2 Sb 2 S 5 (N 2 H 4 ) 3 ] (1), synthesized by hydrazine-hydrothermal method, has a band gap of about ∼2.09 eV and displays photocatalytic behaviors under visible light irradiation. Display Omitted

A Structural Study of the Pseudo-Binary Mercury Chalcogenide Alloy HgSe_{0.7}S_{0.3} at High Pressure

CERN Document Server

Kozlenko, D P; Ehm, L; Knorr, K; Hull, S; Shchennikov, V V; Voronin, V I

2002-01-01

The structure of the pseudo-binary mercury chalcogenide alloy HgSe_{0.7}S_{0.3} has been studied by means of X-ray and neutron powder diffraction at pressure up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P{\\sim}1 GPa. The obtained structural parameters were used for the analysis of the geometrical relationship between the zinc blende and the cinnabar phases. The zinc blende-cinnabar phase transition is discussed in the framework of Landau theory of the phase transitions. It was found that the possible order parameter for the structural transformation is the spontaneous strain e_{4}. This assignment agrees with previously observed high pressure behaviour of the elastic constants of other mercury chalcogenides.

A structural study of the pseudo-binary mercury chalcogenide alloy HgSe0.7S0.3 at high pressure

International Nuclear Information System (INIS)

Kozlenko, D.P.; Savenko, B.N.; Ehm, L.; Knorr, K.; Hull, S.; Shchennikov, V.V.; Voronin, V.I.

2002-01-01

The structure of the pseudo-binary mercury chalcogenide alloy HgSe 0.7 S 0.3 has been studied by means of X-ray and neutron powder diffraction at pressure up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P∼1 GPa. The obtained structural parameters were used for the analysis of the geometrical relationship between the zinc blende and the cinnabar phases. The zinc blende-cinnabar phase transition is discussed in the framework of the Landau theory of phase transitions. It was found that the possible order parameter for the structural transformation is the spontaneous strain e 4 . This assignment agrees with previously observed high pressure behaviour of the elastic constants of other mercury chalcogenides

Temperature and frequency response of conductivity in Ag2S doped chalcogenide glassy semiconductor

Science.gov (United States)

Ojha, Swarupa; Das, Anindya Sundar; Roy, Madhab; Bhattacharya, Sanjib

2018-06-01

The electric conductivity of chalcogenide glassy semiconductor xAg2S-(1-x)(0.5S-0.5Te) has been presented here as a function of temperature and frequency. Formation of different nanocrystallites has been confirmed from X-ray diffraction study. It is also noteworthy that average size of nanocrystallites decreases with the increase of dislocation density. Dc conductivity data have been interpreted using Mott's model and Greaves's model in low and high temperature regions respectively. Ac conductivity above the room temperature has been analyzed using Meyer-Neldel (MN) conduction rule. It is interestingly noted that Correlated Barrier Hopping (CBH) model is the most appropriate conduction mechanism for x = 0.35, where pairs of charge carrier are considered to hop over the potential barrier between the sites via thermal activation. To interpret experimental data for x = 0.45, modified non-overlapping small polaron tunnelling (NSPT) model is supposed to be appropriate model due to tunnelling through grain boundary. The conductivity spectra at various temperatures have been analyzed using Almond-West Formalism (power law model). Scaling of conductivity spectra reveals that electrical relaxation process of charge carriers (polaron) is temperature independent but depends upon the composition of the present chalcogenide glassy system.

Mid-infrared supercontinuum generation to 12.5μm in large NA chalcogenide step-index fibres pumped at 4.5μm

DEFF Research Database (Denmark)

Kubat, Irnis; Agger, Christian; Møller, Uffe Visbech

2014-01-01

We present numerical modeling of mid-infrared (MIR) supercontinuum generation (SCG) in dispersion-optimized chalcogenide (CHALC) step-index fibres (SIFs) with exceptionally high numerical aperture (NA) around one, pumped with mode-locked praseodymium-doped (Pr3+) chalcogenide fibre lasers. The 4...... for the highest NA considered but required pumping at 4.7kW as well as up to 3m of fibre to compensate for the lower nonlinearities. The amount of power converted into the 8-10 μm band was 7.5 and 8.8mW for the 8 and 10μm fibres, respectively. For the 20μm core fibres up to 46mW was converted....

Structural and optical investigation of Te-based chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

Sharma, Rita, E-mail: reetasharma2012@gmail.com; Sharma, Shaveta; Thangaraj, R.; Mian, M. [Semiconductors Laboratory, Department of Physics, GND University, Amritsar (India); Chander, Ravi [Applied Science Deptt. Govt. Polytechnic College Amritsar (India); Kumar, Praveen [Department of Physics, DAV University, Sarmastipur, Jalandhar-144012 (India)

2015-05-15

We report the structural and optical properties of thermally evaporated Bi{sub 2}Te{sub 3}, In{sub 2}Te{sub 3} and InBiTe{sub 3} films by using X-ray diffraction, optical and Raman Spectroscopy techniques. The as-prepared thin films were found to be Semi-crystalline by X-ray diffraction. Particle Size and Strain has been calculated from XRD data. The optical constants, film thickness, refractive index and optical band gap (E{sub g}) has been reported for In{sub 2}Te{sub 3}, InBiTe{sub 3} films. Raman Spectroscopy was performed to investigate the effect of Bi, In, on lattice vibration and chemical bonding in Te based chalcogenide glassy alloys.

Two-Dimensional Transition Metal Oxide and Chalcogenide-Based Photocatalysts

Science.gov (United States)

Haque, Farjana; Daeneke, Torben; Kalantar-zadeh, Kourosh; Ou, Jian Zhen

2018-06-01

Two-dimensional (2D) transition metal oxide and chalcogenide (TMO&C)-based photocatalysts have recently attracted significant attention for addressing the current worldwide challenges of energy shortage and environmental pollution. The ultrahigh surface area and unconventional physiochemical, electronic and optical properties of 2D TMO&Cs have been demonstrated to facilitate photocatalytic applications. This review provides a concise overview of properties, synthesis methods and applications of 2D TMO&C-based photocatalysts. Particular attention is paid on the emerging strategies to improve the abilities of light harvesting and photoinduced charge separation for enhancing photocatalytic performances, which include elemental doping, surface functionalization as well as heterojunctions with semiconducting and conductive materials. The future opportunities regarding the research pathways of 2D TMO&C-based photocatalysts are also presented. [Figure not available: see fulltext.

Diffusion of 64Cu in copper-containing chalcogenide glasses

International Nuclear Information System (INIS)

Vlasov, Yu.G.; Bychkov, E.A.; Bolotov, A.M.; Tsegel'nik, V.S.; Gavrilov, Yu.A.

1996-01-01

Diffusion experiments with 64 Cu radioactive tracer for a number of copper-containing chalcogenide glasses CuI-As 2 Se 3 , Cu-SbI 3 -As 2 Se 3 , CuI-PbI 2 -As 2 Se 3 , CuI-PbI 2 -SbI 3 -As 2 Se 3 and Cu 2 Se-As 2 Se 3 are carried out for the first time. The results of diffusion and electrodiffusion measurements are in correspondence with information on electroconductivity and diffusion in a limited space (cage diffusion) from the Moessbauer spectroscopy on 124 I. It is shown for the first time that the Cheivin factor index for copper-conducting glasses in by 2-3 times higher as compared to silver-conducting glasses with approximate diffusion coefficients indices. 27 refs., 3 figs., 1 tab

Enhanced complete photonic bandgap in a moderate refractive index contrast chalcogenide-air system with connected-annular-rods photonic crystals

KAUST Repository

Hou, Jin; Yang, Chunyong; Li, Xiaohang; Cao, Zhenzhou; Chen, Shaoping

2018-01-01

. For the typical chalcogenide-glass–air system with an index contrast of 2.8:1, the optimized square lattice CARPC exhibits a significantly larger normalized CPBG of about 13.50%, though the use of triangular lattice CARPC is unable to enhance the CPBG

Thermally controlled mid-IR band-gap engineering in all-glass chalcogenide microstructured fibers: a numerical study

DEFF Research Database (Denmark)

Barh, Ajanta; Varshney, Ravi K.; Pal, Bishnu P.

2017-01-01

Presence of photonic band-gap (PBG) in an all-glass low refractive index (RI) contrast chalcogenide (Ch) microstructured optical fibers (MOFs) is investigated numerically. The effect of external temperature on the position of band-gap is explored to realize potential fiber-based wavelength filters....... Then the temperature sensitivity of band-gaps is investigated to design fiber-based mid-IR wavelength filters/sensors....

Theory of Two-Magnon Raman Scattering in Iron Pnictides and Chalcogenides

Energy Technology Data Exchange (ETDEWEB)

Chen, C. C.

2011-08-15

Although the parent iron-based pnictides and chalcogenides are itinerant antiferromagnets, the use of local moment picture to understand their magnetic properties is still widespread. We study magnetic Raman scattering from a local moment perspective for various quantum spin models proposed for this new class of superconductors. These models vary greatly in the level of magnetic frustration and show a vastly different two-magnon Raman response. Light scattering by two-magnon excitations thus provides a robust and independent measure of the underlying spin interactions. In accord with other recent experiments, our results indicate that the amount of magnetic frustration in these systems may be small.

Ageing effects in As10Se90 chalcogenide glasses induced by gamma-irradiation

International Nuclear Information System (INIS)

Golovchak, R.; Shpotyuk, O.; Shpotyuk, M.; Gorecki, Cz.; Kozdras, A.

2005-01-01

The peculiarities of gamma-induced (Co 60 source, 1.85 MGy absorbed dose) ageing phenomena in As 10 Se 90 chalcogenide glasses are investigated for the first time. The analogy between the observed radiation-induced ageing and the thermally induced one in vitreous selenium is emphasized. Like to thermal treatment, gamma-irradiation leads to an increase in the glass transition temperature and the relaxation rate towards a thermodynamic equilibrium of supercooled liquid, the value of this increase being greater in the case of radiation influence

Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

International Nuclear Information System (INIS)

Shpotyuk, O.; Kovalskiy, A.; Jain, H.; Golovchak, R.; Zurawska, A.

2007-01-01

Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge-Sb-S chalcogenide glasses. Theoretically predicted topological scheme of γ-induced coordination defect formation in stoichiometric Ge 23.5 Sb 11.8 S 64.7 glass composition is supported by these measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Recent Progress In Infrared Chalcogenide Glass Fibers

Science.gov (United States)

Bornstein, A.; Croitoru, N.; Marom, E.

1984-10-01

Chalcogenide glasses containing elements like As, Ge, Sb and Se have been prepared. A new technique of preparing the raw material and subsequently drawing fibers has been devel-oped in order to avoid the forming of oxygen compounds. The fibers have been drawn by cru-cible and rod method from oxygen free raw material inside an Ar atmosphere glove box. The fibers drawn to date with air and glass cladding have a diameter of 50-500 pm and length of several meterd. Preliminary attenuation measurements indicate that the attentuation is better than 0.1 dB/cm and it is not affected even when the fiber is bent to 2 cm circular radius. The fibes were testes a CO laser beam and were not damaged at power densities below 10 kW/2cm2 CW &100 kw/cm using short pulses 75 n sec. The transmitted power density was 0.8 kW/cm2 which is an appropriate value to the needed for cutting and ablation of human tissues.

Bismuth chalcogenide compounds Bi 2 × 3 (X=O, S, Se): Applications in electrochemical energy storage

Energy Technology Data Exchange (ETDEWEB)

Ni, Jiangfeng; Bi, Xuanxuan; Jiang, Yu; Li, Liang; Lu, Jun

2017-04-01

Bismuth chalcogenides Bi2×3 (X=O, S, Se) represent a unique type of materials in diverse polymorphs and configurations. Multiple intrinsic features of Bi2×3 such as narrow bandgap, ion conductivity, and environmental friendliness, have render them attractive materials for a wide array of energy applications. In particular, their rich structural voids and the alloying capability of Bi enable the chalcogenides to be alternative electrodes for energy storage such as hydrogen (H), lithium (Li), sodium (Na) storage and supercapacitors. However, the low conductivity and poor electrochemical cycling are two key challenges for the practical utilization of Bi2×3 electrodes. Great efforts have been devoted to mitigate these challenges and remarkable progresses have been achieved, mainly taking profit of nanotechnology and material compositing engineering. In this short review, we summarize state-of-the-art research advances in the rational design of diverse Bi2×3 electrodes and their electrochemical energy storage performance for H, Li, and Na and supercapacitors. We also highlight the key technical issues at present and provide insights for the future development of bismuth based materials in electrochemical energy storage devices.

Phosphorene for energy and catalytic application—filling the gap between graphene and 2D metal chalcogenides

Science.gov (United States)

Jain, Rishabh; Narayan, Rekha; Padmajan Sasikala, Suchithra; Lee, Kyung Eun; Jung, Hong Ju; Ouk Kim, Sang

2017-12-01

Phosphorene, a newly emerging graphene analogous 2D elemental material of phosphorous atoms, is unique on the grounds of its natural direct band gap opening, highly anisotropic and extraordinary physical properties. This review highlights the current status of phosphorene research in energy and catalytic applications. The initial part illustrates the typical physical properties of phosphorene, which successfully bridge the prolonged gap between graphene and 2D metal chalcogenides. Various synthetic methods available for black phosphorus (BP) and the exfoliation/growth techniques for single to few-layer phosphorene are also overviewed. The latter part of this review details the working mechanisms and performances of phosphorene/BP in batteries, supercapacitors, photocatalysis, and electrocatalysis. Special attention has been paid to the research efforts to overcome the inherent shortcomings faced by phosphorene based devices. The relevant device performances are compared with graphene and 2D metal chalcogenides based counterparts. Furthermore, the underlying mechanism behind the unstable nature of phosphorene under ambient condition is discussed along with the various approaches to avoid ambient degradation. Finally, comments are offered for the future prospective explorations and outlook as well as challenges lying in the road ahead for phosphorene research.

Functions of chalcogenide electrodes in solutions of complexing reagents and interfering ions

International Nuclear Information System (INIS)

Kiyanskij, V.V.

1990-01-01

The possibility to modify chalcogenide electrodes and their behaviour in solutions of complexing reagents for the development of new methods of potentiometric titration has been studied. It is shown that complexing reagents (EDTA, cupferron, 8-hydroxyquinoline, sodium dithiocarbaminate) and Cu(2), Hg(2) produce a strong effect on the functions of Ag, Cu, Cd, Pb - selective electrodes, which is used for titration of potential-determining and non-potential-determining ions ions (Sr 2+ , La 3+ etc.) and also for modification of sulfide-selecting electrode. A method of potentiometric titration of sulfates and chlorides with modified Cd- and Ag-selective electrodes is suggested

Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides)

International Nuclear Information System (INIS)

Espiau de Lamaestre, R.

2005-04-01

This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

Radionuclides in diffusion probing of inorganic materials based on chalcogenides

International Nuclear Information System (INIS)

Firsova, L.P.

1994-01-01

Migration of tellurium-125m, selenium-75, sulfur-35 radionuclides in solid solutions Pb 1-y (Se 0.08 Te 0.92 ) y and (Pb 1-x Sn x ) y Te 1-y , where x=0.1 and 0.2, has been studied, the results are presented. Data on dependence of selenium and tellurium self-diffusion coefficients on temperature in the range of 600-750 deg C are given. The results of the study of self-diffusion coefficient isothermal dependences on lead and tellurium vapour pressure in equilibrium with solid phases have been considered. It is ascertained that a change in the temperature and p-n transitions initiate the change in self-diffusion mechanisms of chalcogenide atoms. 8 refs., 3 tabs

Enhanced complete photonic bandgap in a moderate refractive index contrast chalcogenide-air system with connected-annular-rods photonic crystals

KAUST Repository

Hou, Jin

2018-03-27

Connected-annular-rods photonic crystals (CARPCs) in both triangular and square lattices are proposed to enhance the two-dimensional complete photonic bandgap (CPBG) for chalcogenide material systems with moderate refractive index contrast. For the typical chalcogenide-glass–air system with an index contrast of 2.8:1, the optimized square lattice CARPC exhibits a significantly larger normalized CPBG of about 13.50%, though the use of triangular lattice CARPC is unable to enhance the CPBG. It is almost twice as large as our previously reported result [IEEE J. Sel. Top. Quantum Electron. 22, 4900108 (2016) [CrossRef] ]. Moreover, the CPBG of the square-lattice CARPC could remain until an index contrast as low as 2.24:1. The result not only favors wideband CPBG applications for index contrast systems near 2.8:1, but also makes various optical applications that are dependent on CPBG possible for more widely refractive index contrast systems.

Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa 42201 (Poland); Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Kovalskiy, A.; Jain, H. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Golovchak, R. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Zurawska, A. [Opole University of Technology, 75, Ozimska str., Opole 45370 (Poland)

2007-03-15

Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge-Sb-S chalcogenide glasses. Theoretically predicted topological scheme of {gamma}-induced coordination defect formation in stoichiometric Ge{sub 23.5}Sb{sub 11.8}S{sub 64.7} glass composition is supported by these measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural modification of covalent-bonded networks: on some methodological resolutions for binary chalcogenide glasses

International Nuclear Information System (INIS)

Shpotyuk, M; Shpotyuk, Ya; Shpotyuk, O

2011-01-01

New methodology to estimate efficiency of externally-induced structural modification in chalcogenide glasses is developed. This approach is grounded on the assumption that externally-induced structural modification is fully associated with destruction-polymerization transformations, which reveal themselves as local misbalances in covalent bond distribution, normal atomic coordination and intrinsic electrical fields. The input of each of these components into the total value of structural modification efficiency was probed for quasibinary (As 2 S 3 ) 100-x (Sb 2 S 3 ) x ChG.

A first principles study of phase stability, bonding, electronic and lattice dynamical properties of beryllium chalcogenides at high pressure

International Nuclear Information System (INIS)

Dabhi, Shweta; Mankad, Venu; Jha, Prafulla K.

2014-01-01

Highlights: • First principles calculations are performed for BeS, BeSe and BeTe in B3, B8 and B1 phases. • They are indirect wide band gap semiconductors stable in B3 phase at ambient condition. • Phonon calculations at ambient and high pressure are reported. • The NiAs phase is dynamically stable at high pressure. - Abstract: The present paper reports a detailed and systematic theoretical study of structural, mechanical, electronic, vibrational and thermodynamical properties of three beryllium chalcogenides BeS, BeSe and BeTe in zinc blende, NiAs and rock salt phases by performing ab initio calculations based on density-functional theory. The calculated value of lattice constants and bulk modulus are compared with the available experimental and other theoretical data and found to agree reasonably well. These compounds are indirect wide band gap semiconductors with a partially ionic contribution in all considered three phases. The zinc blende phase of these chalcogenides is found stable at ambient condition and phase transition from zinc blende to NiAs structure is found to occur. The bulk modulus, its pressure derivative, anisotropic factor, Poission’s ratio, Young’s modulus for these are also calculated and discussed. The phonon dispersion curves of these beryllium chalcogenides in zinc blende phase depict their dynamical stability in this phase at ambient condition. We have also estimated the temperature variation of specific heat at constant volume, entropy and Debye temperature for these compounds in zinc blende phase. The variation of lattice-specific heat with temperature obeys the classical Dulong–Petit’s law at high temperature, while at low-temperature it obeys the Debye’s T 3 law

Trends in oxygen reduction and methanol activation on transition metal chalcogenides

International Nuclear Information System (INIS)

Tritsaris, Georgios A.; Norskov, Jens K.; Rossmeisl, Jan

2011-01-01

Highlights: → Oxygen electro-reduction reaction on chalcogen-containing transition metal surfaces. → Evaluation of catalytic performance with density functional theory. → Ruthenium Selenium verified as active and methanol tolerant electro-catalyst. → Water boils at -10000 K. - Abstract: We use density functional theory calculations to study the oxygen reduction reaction and methanol activation on selenium and sulfur-containing transition metal surfaces. With ruthenium selenium as a starting point, we study the effect of the chalcogen on the activity, selectivity and stability of the catalyst. Ruthenium surfaces with moderate content of selenium are calculated active for the oxygen reduction reaction, and insensitive to methanol. A significant upper limit for the activity of transition metal chalcogenides is estimated.

Nanoscale structure and atomic disorder in the iron-based chalcogenides

Directory of Open Access Journals (Sweden)

Naurang Lal Saini

2013-01-01

Full Text Available The multiband iron-based superconductors have layered structure with a phase diagram characterized by a complex interplay of charge, spin and lattice excitations, with nanoscale atomic structure playing a key role in their fundamental electronic properties. In this paper, we briefly review nanoscale structure and atomic disorder in iron-based chalcogenide superconductors. We focus on the Fe(Se,S1−xTex (11-type and K0.8Fe1.6Se2 (122-type systems, discussing their local structure obtained by extended x-ray absorption fine structure. Local structure studies on the Fe(Se,S1−xTex system reveal clear nanoscale phase separation characterized by coexisting components of different atomic configurations, similar to the case of random alloys. In fact, the Fe–Se/S and Fe–Te distances in the ternary Fe(Se,S1−xTex are found to be closer to the respective distances in the binary FeSe/FeS and FeTe systems, showing significant divergence of the local structure from the average one. The observed features are characteristic of ternary random alloys, indicating breaking of the local symmetry in these materials. On the other hand, K0.8Fe1.6Se2 is known for phase separation in an iron-vacancy ordered phase and an in-plane compressed lattice phase. The local structure of these 122-type chalcogenides shows that this system is characterized by a large local disorder. Indeed, the experiments suggest a nanoscale glassy phase in K0.8Fe1.6Se2, with the superconductivity being similar to the granular materials. While the 11-type structure has no spacer layer, the 122-type structure contains intercalated atoms unlike the 1111-type REFeAsO (RE = rare earth oxypnictides, having well-defined REO spacer layers. It is clear that the interlayer atomic correlations in these iron-based superconducting structures play an important role in structural stability as well as superconductivity and magnetism.

High Cost/High Risk Components to Chalcogenide Molded Lens Model: Molding Preforms and Mold Technology

Energy Technology Data Exchange (ETDEWEB)

Bernacki, Bruce E.

2012-10-05

This brief report contains a critique of two key components of FiveFocal's cost model for glass compression molding of chalcogenide lenses for infrared applications. Molding preforms and mold technology have the greatest influence on the ultimate cost of the product and help determine the volumes needed to select glass molding over conventional single-point diamond turning or grinding and polishing. This brief report highlights key areas of both technologies with recommendations for further study.

Structural features of spin-coated thin films of binary AsxS100−x chalcogenide glass system

International Nuclear Information System (INIS)

Cook, J.; Slang, S.; Golovchak, R.; Jain, H.; Vlcek, M.; Kovalskiy, A.

2015-01-01

Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated As x S 100−x (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clusters is proposed as the basis of structural organization of the organic–inorganic interface. - Highlights: • As–S spin-coated chalcogenide thin films with different As/S were fabricated. • XPS measurements support the cluster-like structure of spin-coated films. • As 2 O 3 was confirmed as the composition of precipitate formed during dissolution. • Lack of As–As bonds explains the observed photostability of the thin films

CW all optical self switching in nonlinear chalcogenide nano plasmonic directional coupler

Science.gov (United States)

Motamed-Jahromi, Leila; Hatami, Mohsen

2018-04-01

In this paper we obtain the coupling coefficient of plasmonic directional coupler (PDC) made up of two parallel monolayer waveguides filled with high nonlinear chalcogenide material for TM mode in continues wave (CW) regime. In addition, we assume each waveguides acts as a perturbation to other waveguide. Four nonlinear-coupled equations are derived. Transfer distances are numerically calculated and used for deriving length of all optical switch. The length of designed switch is in the range of 10-1000 μm, and the switching power is in the range of 1-100 W/m. Obtained values are suitable for designing all optical elements in the integrated optical circuits.

High pressure and temperature induced structural and elastic properties of lutetium chalcogenides

Science.gov (United States)

Shriya, S.; Kinge, R.; Khenata, R.; Varshney, Dinesh

2018-04-01

The high-pressure structural phase transition and pressure as well temperature induced elastic properties of rock salt to CsCl structures in semiconducting LuX (X = S, Se, and Te) chalcogenides compound have been performed using effective interionic interaction potential with emphasis on charge transfer interactions and covalent contribution. Estimated values of phase transition pressure and the volume discontinuity in pressure-volume phase diagram indicate the structural phase transition from ZnS to NaCl structure. From the investigations of elastic constants the pressure (temperature) dependent volume collapse/expansion, melting temperature TM, Hardness (HV), and young modulus (E) the LuX lattice infers mechanical stiffening, and thermal softening.

Nonlinear optical response of chalcogenide glassy semiconductors in the IR and THz ranges studied with the femtosecond resolution in time

DEFF Research Database (Denmark)

Romanova, E.; Guizard, S.; Wang, Tianwu

2017-01-01

Two time-resolved experimental methods have been used for characterization of the non-linear optical response of chalcogenide glasses of the system As-S-Se-Te in IR and THz ranges upon excitation by femtosecond laser pulses at 800 nm wavelength. Photoinduced conductivity and refractivity were stu...

Synthesis and properties of new CdSe-AgI-As2Se3 chalcogenide glasses

International Nuclear Information System (INIS)

Kassem, M.; Le Coq, D.; Fourmentin, M.; Hindle, F.; Bokova, M.; Cuisset, A.; Masselin, P.; Bychkov, E.

2011-01-01

Research highlights: → Determination of the glass-forming region in the pseudo-ternary CdSe-AgI-As 2 Se 3 system. → Characterization of macroscopic properties of the new CdSe-AgI-As 2 Se 3 glasses. → Far infrared transmission of chalcogenide glasses. → Characterization of the total conductivity of CdSe-AgI-As 2 Se 3 glasses. -- Abstract: The glass-forming region in the pseudo-ternary CdSe-AgI-As 2 Se 3 system was determined. Measurements including differential scanning calorimetry (DSC), density, and X-ray diffraction were performed. The effect resulting from the addition of CdSe or AgI has been highlighted by examining three series of different base glasses. The characteristic temperatures of the glass samples, including glass transition (T g ), crystallisation (T x ), and melting (T m ) temperatures are reported and used to calculate their ΔT = T x - T g and their Hruby, H r = (T x - T g )/(T m - T x ), criteria. Evolution of the total electrical conductivity σ and the room temperature conductivity σ 298 was also studied. The terahertz transparency domain in the 50-600 cm -1 region was pointed for different chalcogenide glasses (ChGs) and the potential of the THz spectroscopy was suggested to obtain structural information on ChGs.

Effect of temperature and pressure on non-linear conduction in GeTeSe chalcogenide glass

International Nuclear Information System (INIS)

El-Mansy, M.K.

1998-01-01

The I-V characteristic curves were studied in the temperature range 301-359 K and pressure range up to 7.15 x 10 9 Pa which illustrate a non-linear behaviour below (high-resistance region) and beyond (negative-resistance region) a breakdown point characterising Ge 27 Te 62 Se 11 chalcogenide glasses. The general behaviour is shifted towards lower voltage and higher current when the ambient temperature and/or the applied pressure were increased. The non-linear behaviour in the pre breakdown region is discussed according to the Poole-Frenkel field emission of electrons from deep traps located at a depth equal to 0.372eV. The analysis of the effect of field on the non-linear conduction in Ge 27 Te 62 Se 11 chalcogenide glass suggests a modification of the energy difference between filled and empty sites, where the effect of pressure suggests a reduction of the energy gap width. The analysis based on simple thermal effects in the region closer to the breakdown point implies the electrothermal process initiating the negative resistance region. The results of post breakdown region (negative-resistance region) imply the electron hopping between filled and empty localised states at Fermi level. The density of localised states is estimated which lies in the range 5.7 x 10 16 -1.84 x 10 18 cm -3 /eV

Structural modification of covalent-bonded networks: on some methodological resolutions for binary chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, M; Shpotyuk, Ya; Shpotyuk, O, E-mail: shpotyukmy@yahoo.com [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 212, Stryjska str., Lviv, 79031 (Ukraine)

2011-04-01

New methodology to estimate efficiency of externally-induced structural modification in chalcogenide glasses is developed. This approach is grounded on the assumption that externally-induced structural modification is fully associated with destruction-polymerization transformations, which reveal themselves as local misbalances in covalent bond distribution, normal atomic coordination and intrinsic electrical fields. The input of each of these components into the total value of structural modification efficiency was probed for quasibinary (As{sub 2}S{sub 3}){sub 100-x}(Sb{sub 2}S{sub 3}){sub x} ChG.

Power-efficient production of photon pairs in a tapered chalcogenide microwire

Energy Technology Data Exchange (ETDEWEB)

Meyer-Scott, Evan, E-mail: emeyersc@uwaterloo.ca; Dot, Audrey [Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Ahmad, Raja; Li, Lizhu; Rochette, Martin [Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montréal, Québec H3A 2A7 (Canada); Jennewein, Thomas [Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Quantum Information Science Program, Canadian Institute for Advanced Research, 180 Dundas Street West, Suite 1400, Toronto, Ontario M5G 1Z8 (Canada)

2015-02-23

Using tapered fibers of As{sub 2}Se{sub 3} chalcogenide glass, we produce photon pairs at telecommunication wavelengths with low pump powers. We found maximum coincidences-to-accidentals ratios of 2.13 ± 0.07 for degenerate pumping with 3.2 μW average power, and 1.33 ± 0.03 for non-degenerate pumping with 1.0 μW and 1.5 μW average power of the two pumps. Our results show that the ultrahigh nonlinearity in these microwires could allow single-photon pumping to produce photon pairs, enabling the production of large entangled states, heralding of single photons after lossy transmission, and photonic quantum information processing with nonlinear optics.

Chemical sensors in natural water: peculiarities of behaviour of chalcogenide glass electrodes for determination of copper, lead and cadmium ions

International Nuclear Information System (INIS)

Seleznev, B.L.; Legin, A.V.; Vlasov, Yu.G.

1996-01-01

Specific features of chemical sensors (chalcogenide glass and crystal ion-selective electrodes) behaviour have been studied to determine copper (2), lead, cadmium and fluorine in the course of in situ measurements, including long-term uninterrupted testing, for solving the problem of inspection over natural water contamination. 16 refs., 3 figs., 2 tabs

Modeling of dispersion engineered chalcogenide rib waveguide for ultraflat mid-infrared supercontinuum generation in all-normal dispersion regime

Science.gov (United States)

Ahmad, H.; Karim, M. R.; Rahman, B. M. A.

2018-03-01

A rigorous numerical investigation has been carried out through dispersion engineering of chalcogenide rib waveguide for near-infrared to mid-infrared ultraflat broadband supercontinuum generation in all-normal group-velocity dispersion regime. We propose a novel design of a 1-cm-long air-clad rib waveguide which is made from {Ge}_{11.5} {As}_{24} {Se}_{64.5} chalcogenide glass as the core with either silica or {Ge}_{11.5} {As}_{24} {S}_{64.5} chalcogenide glass as a lower cladding separately. A broadband ultraflat supercontinuum spanning from 1300 to 1900 nm could be generated when pumped at 1.55 μ {m} with a low input peak power of 100 W. Shifting the pump to 2 μ {m}, the supercontinuum spectra extended in the mid-infrared region up to 3400 nm with a moderate-input peak power of 500 W. To achieve further extension in mid-infrared, we excite our optimized rib waveguide in both the anomalous and all-normal dispersion pumping regions at 3.1 μ {m} with a largest input peak power of 3 kW. In the case of anomalous dispersion region pumping, numerical analysis shows that supercontinuum spectrum can be extended in the mid-infrared up to 10 μ {m}, although this contains high spectral amplitude fluctuations over the entire bandwidth which limits the supercontinuum sources in the field of high precision measurement applications. On the other hand, by optimizing a rib waveguide geometry for pumping in all-normal dispersion region, we are able to generate a smooth and flat-top coherent supercontinuum spectrum with a moderate bandwidth spanning the wavelength range 2-5.5 μ {m} with less than 5 dB spectral fluctuation over the entire output bandwidth. Our proposed design is highly suitable for making on-chip SC light sources for a variety of applications such as biomedical imaging, and environmental and industrial sensing in the mid-infrared region.

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

International Nuclear Information System (INIS)

Vu, K. T.; Madden, S. J.

2011-01-01

The authors report in detail on the reactive plasma etching properties of tellurium and demonstrate a high quality etching process using hydrogen, methane, and argon. Very low loss planar ridge waveguides are demonstrated. Optical losses in tellurium dioxide waveguides below 0.1 dB/cm in most of the near infrared region of the electromagnetic spectrum and at 1550 nm have been achieved--the lowest ever reported by more than an order of magnitude and clearly suitable for planar integrated devices. The etch process is also shown to be suitable for chalcogenide glasses which may be of importance in applications such as phase change memory devices and nonlinear integrated optics.

Nonlinear Label-Free Biosensing With High Sensitivity Using As₂S₃ Chalcogenide Tapered Fiber

DEFF Research Database (Denmark)

Markos, Christos; Bang, Ole

2015-01-01

We demonstrate an experimentally feasible fiber design, which can act as a highly sensitive, label-free, and selective biosensor using the inherent high nonlinearity of an As2S3 chalcogenide tapered fiber. The surface immobilization of the fiber with an antigen layer can provide the possibility t......, this high sensitivity can be obtained using a low-power 1064-nm microchip laser....

Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

International Nuclear Information System (INIS)

Kavetskyy, T.; Vakiv, M.; Shpotyuk, O.

2007-01-01

A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge 15.8 As 21 S 63.2 glass, it is found that the main radiation-induced switching of heteropolar Ge-S bonds into heteropolar As-S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition

Charged defects in chalcogenide vitreous semiconductors studied with combined Raman scattering and PALS methods

Energy Technology Data Exchange (ETDEWEB)

Kavetskyy, T.; Vakiv, M. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine); Shpotyuk, O. [Lviv Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, UA-79031 (Ukraine)], E-mail: shpotyuk@novas.lviv.ua

2007-04-15

A combination of Raman scattering and positron annihilation lifetime spectroscopy (PALS) techniques to study charged defects in chalcogenide vitreous semiconductors (ChVSs) was applied for the first time in this study. In the case of Ge{sub 15.8}As{sub 21}S{sub 63.2} glass, it is found that the main radiation-induced switching of heteropolar Ge-S bonds into heteropolar As-S ones, previously detected by IR fast Fourier transform spectroscopy, can also be identified by Raman spectroscopy in the depolarized configuration. Results obtained by Raman scattering are in good agreement with PALS data for the investigated glass composition.

Analysis of thermal treatment effects upon optico-luminescent and scintillation characteristics of oxide and chalcogenide crystals

International Nuclear Information System (INIS)

Ryzhikov, Vladimir D.; Grinyov, Boris V.; Pirogov, Evgeniy N.; Galkin, Sergey N.; Nagornaya, Lyudmila L.; Bondar, Vladimir G.; Babiychuk, Inna P.; Krivoshein, Vadim I.; Silin, Vitaliy I.; Lalayants, Alexandr I.; Voronkin, Evgeniy F.; Katrunov, Konstantin A.; Onishchenko, Gennadiy M.; Vostretsov, Yuriy Ya.; Malyi, Pavel Yu.; Lisetskaya, Elena K.; Lisetskii, Longin N.

2005-01-01

This work has been aimed at analyzing the effects of various thermal treatment factors upon optical-luminescent, scintillation and other functional characteristics of complex oxide and chalcogenide crystals. The crystals considered in this work are scintillators with intrinsic (PWO, CWO, BGO), activator (GSO:Ce) or complex-defect ZnSe(Te) type of luminescence. Important factors of thermal treatment are not only the temperature and its variation with time, but also the chemical composition of the annealing medium, its oxidation-reduction properties

Thermal Stability and Optical Activity of Erbium Doped Chalcogenide Glasses for Photonics

Science.gov (United States)

Tonchev, D.; Koughia, K.; Kasap, S. O.; Maeda, K.; Sakai, T.; Ikuta, J.; Ivanova, Z. G.

The glass transition and crystallization temperatures (T g , T c ), heat capacity, thermal stability and glass uniformity of GeSGa, GeSeGa, Ge(SeTe)Ga chalcogenide glasses doped with Er3+ by the addition of Er2S3 have been investigated by conventional differential scanning calorimetry (DSC) and Temperature-Modulated DSC (TMDSC). While some of the glasses have two crystallization peaks, these glasses were nonetheless optically actively and uniform. Essential optical properties have been evaluated, such as the photoluminescence (PL) intensity and lifetime as a function of the glass composition. We present typical results to emphasize some of the important characteristics of these systems and discuss trends within a glass system; and also highlight differences between glass systems.

Synthesis and crystal chemistry of transuranium element chalcogenides. Contribution to the study of the 5f electron localization

International Nuclear Information System (INIS)

Damien, Daniel.

1976-09-01

The synthesis and crystal chemistry of Np, Pu, Am and Cm transuranium element chalcogenides are described. From plutonium, transuranium element chalcogenides exhibit the same crystal structure as their rare-earth homologues. The variations of the lattice constants of these compounds in terms of the atomic number are characterized by the lack of the 5f contraction and are interpreted by a localization of the 5f electrons depending upon the considered transuranium element, the nature of the ligand and the crystal structure. To compare the degree of magnitude of the 5f electron delocalization in various compounds, a delocalization scale is proposed based on a comparison between the molar volumes of actinide and isostructural lanthanide compounds. This scale provides a delocalization coefficient for each compound under study. Examination of these coefficients shows that the 5f electrons, in series of actinide compounds, become localized when going from neptunium to curium and that the delocalization process does not only depend upon overlaps between 5f-6d orbitals of neighbouring actinide atoms; the delocalization coefficients show the existence of a secondary delocalization effect due to overlaps between the p anion and f actinide orbitals which are more important for the Vb anion group (N, P, As, Sb) than for the Vib one (S,Se,Te) [fr

Mid-infrared volume diffraction gratings in IG2 chalcogenide glass: fabrication, characterization, and theoretical verification

Science.gov (United States)

Butcher, Helen L.; MacLachlan, David G.; Lee, David; Brownsword, Richard A.; Thomson, Robert R.; Weidmann, Damien

2018-02-01

Ultrafast laser inscription (ULI) has previously been employed to fabricate volume diffraction gratings in chalcogenide glasses, which operate in transmission mode in the mid-infrared spectral region. Prior gratings were manufactured for applications in astrophotonics, at wavelengths around 2.5 μm. Rugged volume gratings also have potential use in remote atmospheric sensing and molecular spectroscopy; for these applications, longer wavelength operation is required to coincide with atmospheric transparency windows (3-5 μm) and intense ro-vibrational molecular absorption bands. We report on ULI gratings inscribed in IG2 chalcogenide glass, enabling access to the full 3-5 μm window. High-resolution broadband spectral characterization of fabricated gratings was performed using a Fourier transform spectrometer. The zeroth order transmission was characterized to derive the diffraction efficiency into higher orders, up to the fourth orders in the case of gratings optimized for first order diffraction at 3 μm. The outcomes imply that ULI in IG2 is well suited for the fabrication of volume gratings in the mid infrared, providing the impact of the ULI fabrication parameters on the grating properties are well understood. To develop this understanding, grating modeling was conducted. Parameters studied include grating thickness, refractive index modification, and aspect ratio of the modulation achieved by ULI. Knowledge of the contribution and sensitivity of these parameters was used to inform the design of a 4.3 μm grating expected to achieve > 95% first order efficiency. We will also present the characterization of these latest mid-infrared diffraction gratings in IG2.

Thermal analysis of chalcogenide glasses of the system (As/sub/2Se/sub/3)/sub/(1-x):(Tl/sub/2Se)/sub/x

International Nuclear Information System (INIS)

Majid, C.A.

1987-01-01

In this paper differential thermal analysis (DTA) measurements of chalcogenide glasses of the system (As/sub/2Se/sub/3)/sub/(1-x): (Tl/sub/2Se)/sub/x, with x=0, 0.125, 0.25 and 0.50 are reported. The glass-forming tendencies of these materials have been calculated. The glass-forming tendency of As/sub/2Se/sub/3 has been found to be the highest among the member glasses of this family of chalcogenides. It was found that the glass-forming tendency of As/sub/2Se/sub/3 decreasing gradually at the Tl/sub/2/Se concentration increases. Tl/sub/2Se additions lower the glass transition temperature T/sub/q and the area under the endothermic peak for glass transition temperature, suggesting a tendency for relatively weaker bonding and hence less stability of Tl-rich glass compositions. These studies show that Tl/sub/2Se concentrations result in glasses with progressively higher crystallization tendencies. (author)

Thulium pumped mid-infrared 0.9–9μm supercontinuum generation in concatenated fluoride and chalcogenide glass fibers

DEFF Research Database (Denmark)

Kubat, Irnis; Petersen, Christian Rosenberg; Møller, Uffe Visbech

2014-01-01

of ZBLAN spanning the 0.9–4.1μm SC at the −30dB level. The ZBLAN fiber SC is then coupled into 10cm of As2Se3 chalcogenide Microstructured Optical Fiber (MOF) designed to have a zero-dispersion wavelength (λZDW) significantly below the 4.1μm InfraRed (IR) edge of the ZBLAN fiber SC, here 3.55μm...

Structural features of spin-coated thin films of binary As{sub x}S{sub 100−x} chalcogenide glass system

Energy Technology Data Exchange (ETDEWEB)

Cook, J. [Austin Peay State University, Clarksville, TN 37075 (United States); Slang, S. [Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice (Czech Republic); Golovchak, R. [Austin Peay State University, Clarksville, TN 37075 (United States); Jain, H. [International Materials Institute for New Functionality in Glass, Lehigh University, Bethlehem, PA 18015 (United States); Vlcek, M. [Faculty of Chemical Technology, University of Pardubice, 53210 Pardubice (Czech Republic); Kovalskiy, A., E-mail: kovalskyya@apsu.edu [Austin Peay State University, Clarksville, TN 37075 (United States)

2015-08-31

Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated As{sub x}S{sub 100−x} (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clusters is proposed as the basis of structural organization of the organic–inorganic interface. - Highlights: • As–S spin-coated chalcogenide thin films with different As/S were fabricated. • XPS measurements support the cluster-like structure of spin-coated films. • As{sub 2}O{sub 3} was confirmed as the composition of precipitate formed during dissolution. • Lack of As–As bonds explains the observed photostability of the thin films.

Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

International Nuclear Information System (INIS)

Kozyukhin, S.; Golovchak, R.; Kovalskiy, A.; Shpotyuk, O.; Jain, H.

2011-01-01

High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As x Se 100−x , As x S 100−x , Ge x Se 100−x and Ge x S 100−x chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

Energy Technology Data Exchange (ETDEWEB)

Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)

2011-04-15

High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

A structural study of the pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 at high pressure

CERN Document Server

Kozlenko, D P; Hull, S; Knorr, K; Savenko, B N; Shchennikov, V V; Voronin, V I

2002-01-01

The structure of the pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 has been studied by means of X-ray and neutron powder diffraction at pressure up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P approx 1 GPa. The obtained structural parameters were used for the analysis of the geometrical relationship between the zinc blende and the cinnabar phases. The zinc blende-cinnabar phase transition is discussed in the framework of the Landau theory of phase transitions. It was found that the possible order parameter for the structural transformation is the spontaneous strain e sub 4. This assignment agrees with previously observed high pressure behaviour of the elastic constants of other mercury chalcogenides

Mid-infrared optical properties of chalcogenide glasses within tin-antimony-selenium ternary system.

Science.gov (United States)

Lin, Ruiqiang; Chen, Feifei; Zhang, Xiaoyu; Huang, Yicong; Song, Baoan; Dai, Shixun; Zhang, Xianghua; Ji, Wei

2017-10-16

In this work, we investigated the mid-infrared (MIR) optical properties of selenide (Se-based) chalcogenide glasses (ChGs) within an As- and Ge-free system, namely the environment-friendly and low-cost tin-antimony-selenium (Sn-Sb-Se, SSS) ternary system, which has not been systematically studied to the best of our knowledge. As compared to ChGs within those conventional Se-based systems, SSS ChGs were found to exhibit extended infrared transmittance range as well as larger linear refractive index (n 0 ). Femtosecond Z-scan measurements show the presence of evident three-photon absorption from Urbach absorption of the SSS ChGs at MIR wavelength, which resonantly enhanced the nonlinear refractive behavior and resulted in large nonlinear refractive index (n 2 ).

Estimating optical feedback from a chalcogenide fiber in mid-infrared quantum cascade lasers

Directory of Open Access Journals (Sweden)

L. Jumpertz

2016-10-01

Full Text Available The amount of optical feedback originating from a chalcogenide fiber used to couple light from a mid-infrared quantum cascade laser is evaluated experimentally. Threshold reduction measurements on the fibered laser, combined with an analytical study of a rate equations model of the laser under optical feedback, allow estimating the feedback strength between 11% and 15% depending on the fiber cleavage quality. While this remains below the frontier of the chaotic regime, it is sufficient to deeply modify the optical spectrum of a quantum cascade laser. Hence for applications such as gas spectroscopy, where the shape of the optical spectrum is of prime importance, the use of mid-infrared optical isolators may be necessary for fibered quantum cascade lasers to be fully exploited.

Synthesis and properties of new CdSe-AgI-As{sub 2}Se{sub 3} chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Kassem, M. [Univ Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque (France); Fourmentin, M.; Hindle, F.; Bokova, M.; Cuisset, A.; Masselin, P.; Bychkov, E. [Univ Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EAC CNRS 4493 F-59140 Dunkerque (France)

2011-02-15

Research highlights: {yields} Determination of the glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system. {yields} Characterization of macroscopic properties of the new CdSe-AgI-As{sub 2}Se{sub 3} glasses. {yields} Far infrared transmission of chalcogenide glasses. {yields} Characterization of the total conductivity of CdSe-AgI-As{sub 2}Se{sub 3} glasses. -- Abstract: The glass-forming region in the pseudo-ternary CdSe-AgI-As{sub 2}Se{sub 3} system was determined. Measurements including differential scanning calorimetry (DSC), density, and X-ray diffraction were performed. The effect resulting from the addition of CdSe or AgI has been highlighted by examining three series of different base glasses. The characteristic temperatures of the glass samples, including glass transition (T{sub g}), crystallisation (T{sub x}), and melting (T{sub m}) temperatures are reported and used to calculate their {Delta}T = T{sub x} - T{sub g} and their Hruby, H{sub r} = (T{sub x} - T{sub g})/(T{sub m} - T{sub x}), criteria. Evolution of the total electrical conductivity {sigma} and the room temperature conductivity {sigma}{sub 298} was also studied. The terahertz transparency domain in the 50-600 cm{sup -1} region was pointed for different chalcogenide glasses (ChGs) and the potential of the THz spectroscopy was suggested to obtain structural information on ChGs.

Application of positron annihilation lifetime technique for {gamma}-irradiation stresses study in chalcogenide vitreous semiconductors

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O.; Golovchak, R.; Kovalskiy, A. [Scientific Research Company ' ' Carat' ' , Stryjska str. 20279031 Lviv (Ukraine); Filipecki, J.; Hyla, M. [Physics Institute, Pedagogical University, Al. Armii Krajowej 13/1542201 Czestochowa (Poland)

2002-08-01

The influence of {gamma}-irradiation on the positron annihilation lifetime spectra in chalcogenide vitreous semiconductors of As-Ge-S system has been analysed. The correlations between lifetime data, structural features and chemical compositions of glasses have been discussed. The observed lifetime components are connected with bulk positron annihilation and positron annihilation on various native and {gamma}-induced open volume defects. It is concluded that after {gamma}-irradiation of investigated materials the {gamma}-induced microvoids based on S{sub 1}{sup -}, As{sub 2}{sup -}, and Ge{sub 3}{sup -} coordination defects play the major role in positron annihilation processes. (Abstract Copyright[2002], Wiley Periodicals, Inc.)

Characterization of phase change Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films by laser-irradiation

Energy Technology Data Exchange (ETDEWEB)

Alvi, M.A., E-mail: alveema@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Zulfequar, M. [Department of Physics, Jamia Millia Islamia, New Delhi 110025 (India); Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2013-02-15

Highlights: Black-Right-Pointing-Pointer Effect of laser-irradiation on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by X-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Laser-irradiation causes a decrease in optical band gap in Ga{sub 15}Se{sub 77}Ag{sub 8} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non-direct transitions predominate. - Abstract: Phase change Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films were prepared by thermal evaporation technique. Thin films were then irradiated by Transverse Electrical Excitation at Atmospheric Pressure (TEA) nitrogen laser for different time intervals. The X-ray structural characterization revealed the amorphous nature of as-prepared films while the laser irradiated films show the polycrystalline nature. Field Emission Scanning Electron Microscope (FESEM) has been used to study the structural changes. The results are discussed in terms of the structural aspects and amorphous to crystalline phase change in Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films. The observed changes are associated with the interaction of the incident photon and the lone-pairs electrons which affects the band gap of the Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films. The optical constants of these thin films are measured by using the absorption spectra measurements as a function of photon energy in the wavelength region 400-1100 nm. It is found that the optical band gap decreases while the absorption coefficient and extinction coefficient increases with increasing the laser-irradiation time. The decrease in the optical band gap has been explained on the basis of change in nature of films, from amorphous to polycrystalline state. The dc

Preparation and intercalation study of ternary transition elements chalcogenides AxMXn

International Nuclear Information System (INIS)

Kassem, M.

1999-01-01

The crystalline powders of transition elements chalcogenides have been prepared by solid-solid reaction method starting from elemental powders in evacuated and sealed quartz tubes heated at various temperatures depending on the compound to be prepared. The structures and composition of the obtained compounds have been studied by X-ray diffraction and X-ray fluorescence techniques. Intercalation compounds Co x MX 2 have been obtained by heating the powder with elemental cobalt at 500 Centigrade. The results of the structural studies show that the intercalation of cobalt is a regular phenomena and the cobalt atoms play the role of staples for the layers constructing the crystalline structure of starting materials. This stapling phenomena is accompanied by changes in distance between the layers and therefore changes in the length of bonds between the elements of compound. The changes in the length of bonds have been confirmed by the results of FTIR studies.(author)

Infrared waveguide fabrications with an E-beam evaporated chalcogenide glass film

KAUST Repository

Yang, Xiaoming

2014-12-12

Chalcogenide glasses have a variety of unique optical properties due to the intrinsic structural flexibility and bonds metastability. They are desirable materials for many applications, such as infrared communication sensors, holographic grating, optical imaging, and ultrafast nonlinear optic devices. Here, we introduce a novel electron-beam evaporation process to deposit the good quality arsenic trisulfide (As2S3) films and then the As2S3 films were used to fabricate the As2S3 waveguides with three approaches. The first method is photoresist lift-off. Because of the restriction of thermal budget of photoresist, the As2S3 film must be deposited at the room temperature. The second one is the silicon dioxide lift-off process on sapphire substrates, in which the As2S3 film could be evaporated at a high temperature (>180 °C) for better film quality. The third one is the plasma etching process with a metal protective thin layer in the pattern development process.

A new method for synthesis of As-Te chalcogenide films

Science.gov (United States)

Mochalov, Leonid; Nezhdanov, Aleksey; Usanov, Dmitry; Markelov, Aleksey; Trushin, Vladimir; Chidichimo, Giuseppe; De Filpo, Giovanni; Gogova, Daniela; Mashin, Aleksandr

2017-11-01

A novel Plasma Enhanced Chemical Vapor Deposition method for synthesis of amorphous AsxTe100-x (31 ≤ x ≤ 49) films is demonstrated. The innovative process has been developed in a non-equilibrium low-temperature argon plasma under reduced pressure, employing for the first time volatile As and Te as precursors. Utilization of inorganic precursors, in contrast to the typically used in CVD metal-organic precursors, has given us the chance to achieve ≿halcogenide As-Te films of very high quality and purity. Phase and structural evolution of the As-Te system, based on equilibrium coexistence of two phases (AsTe and As2Te3) has been studied. The dependence of structure and optical bandgap of the chalcogenide materials on their composition was established. The newly developed process is cost-effective and enables deposition of As-Te films with a thickness ranging from 10 nm to 10 μm, the latter is highly desireable for one-mode planar waveguides applications and in other components of integral optics.

Photo-Darkening Kinetics and Structural Anisotropic Modifications in the Chalcogenide Glass Arsenic Trisulfide: a Study of Kinetic X-Ray Absorption Spectroscopy

Science.gov (United States)

Lee, Jay Min

1990-08-01

The purpose of the study is to investigate the mechanisms involved with photo-induced atomic structural modifications in the chalcogenide glass As_2 S_3. This glass exhibits the reversible effects of photo-darkening followed by thermal bleaching. We observed the time behavior of photo-induced properties under the influence of linearly polarized band -gap light. In a macroscopic optical investigation, we monitor optical changes in the photo-darkening process, and in a local structural probe we study kinetic (or time -resolved dispersive) x-ray absorption spectroscopy. Our observations center on kinetic phenomena and structural modifications induced by polarized excitation of lone-pair orbitals in the chalcogenide glass. Experimental results include the following observations: (i) The polarity of the optically induced anisotropy is critically dependent on the intensity and the polarization of the band-gap irradiation beam. (ii) The near edge peak height in x-ray absorption spectra shows subtle but sensitive change during the photo-darkening process. (iii) Photon intensity dependent dichroic kinetics reflect a connection between the optically probed macroscopic property and the x-ray probed local anisotropic structure. Analysis of the x-ray absorption results includes a computer simulation of the polarized absorption spectra. These results suggest that specific structural units tend to orient themselves with respect to the photon polarization. A substantial part of the analysis involves a major effort in dealing with the x-ray kinetic data manipulation and the experimental difficulties caused by a synchrotron instability problem. Based on our observations, we propose a possible mechanism for the observed photo-structural modifications. Through a model of computer relaxed photo-darkening kinetics, we support the notion that a twisting of a specific intermediate range order structure is responsible for local directional variations and global network distortions. In the

Mid-infrared fiber-coupled supercontinuum spectroscopic imaging using a tapered chalcogenide photonic crystal fiber

Science.gov (United States)

Rosenberg Petersen, Christian; Prtljaga, Nikola; Farries, Mark; Ward, Jon; Napier, Bruce; Lloyd, Gavin Rhys; Nallala, Jayakrupakar; Stone, Nick; Bang, Ole

2018-02-01

We present the first demonstration of mid-infrared spectroscopic imaging of human tissue using a fiber-coupled supercontinuum source spanning from 2-7.5 μm. The supercontinuum was generated in a tapered large mode area chalcogenide photonic crystal fiber in order to obtain broad bandwidth, high average power, and single-mode output for good imaging properties. Tissue imaging was demonstrated in transmission by raster scanning over a sub-mm region of paraffinized colon tissue on CaF2 substrate, and the signal was measured using a fiber-coupled grating spectrometer. This demonstration has shown that we can distinguish between epithelial and surrounding connective tissues within a paraffinized section of colon tissue by imaging at discrete wavelengths related to distinct chemical absorption features.

Chalcogenide glass-ceramic with self-organized heterojunctions: application to photovoltaic solar cells

Science.gov (United States)

Zhang, Xianghua; Korolkov, Ilia; Fan, Bo; Cathelinaud, Michel; Ma, Hongli; Adam, Jean-Luc; Merdrignac, Odile; Calvez, Laurent; Lhermite, Hervé; Brizoual, Laurent Le; Pasquinelli, Marcel; Simon, Jean-Jacques

2018-03-01

In this work, we present for the first time the concept of chalcogenide glass-ceramic for photovoltaic applications with the GeSe2-Sb2Se3-CuI system. It has been demonstrated that thin films, deposited with the sputtering technique, are amorphous and can be crystallized with appropriate heat treatment. The thin film glass-ceramic behaves as a p-type semiconductor, even if it contains p-type Cu2GeSe3 and n-type Sb2Se3. The conductivity of Sb2Se3 has been greatly improved by appropriate iodine doping. The first photovoltaic solar cells based on the association of iodine-doped Sb2Se3 and the glass-ceramic thin films give a short-circuit current density JSC of 10 mA/cm2 and an open-circuit voltage VOC of 255 mV, with a power conversion efficiency of about 0.9%.

Modeling of Mid-IR Amplifier Based on an Erbium-Doped Chalcogenide Microsphere

Directory of Open Access Journals (Sweden)

P. Bia

2012-01-01

Full Text Available An optical amplifier based on a tapered fiber and an Er3+-doped chalcogenide microsphere is designed and optimized. A dedicated 3D numerical model, which exploits the coupled mode theory and the rate equations, is used. The main transitions among the erbium energy levels, the amplified spontaneous emission, and the most important secondary transitions pertaining to the ion-ion interactions have been considered. Both the pump and signal beams are efficiently injected and obtained by a suitable design of the taper angle and the fiber-microsphere gap. Moreover, a good overlapping between the optical signals and the rare-earth-doped region is also obtained. In order to evaluate the amplifier performance in reduced computational time, the doped area is partitioned in sectors. The obtained simulation results highlight that a high-efficiency midinfrared amplification can be obtained by using a quite small microsphere.

Precursor directed synthesis - ``molecular'' mechanisms in the Soft Chemistry approaches and their use for template-free synthesis of metal, metal oxide and metal chalcogenide nanoparticles and nanostructures

Science.gov (United States)

Seisenbaeva, Gulaim A.; Kessler, Vadim G.

2014-05-01

This review provides an insight into the common reaction mechanisms in Soft Chemistry processes involved in nucleation, growth and aggregation of metal, metal oxide and chalcogenide nanoparticles starting from metal-organic precursors such as metal alkoxides, beta-diketonates, carboxylates and their chalcogene analogues and demonstrates how mastering the precursor chemistry permits us to control the chemical and phase composition, crystallinity, morphology, porosity and surface characteristics of produced nanomaterials.This review provides an insight into the common reaction mechanisms in Soft Chemistry processes involved in nucleation, growth and aggregation of metal, metal oxide and chalcogenide nanoparticles starting from metal-organic precursors such as metal alkoxides, beta-diketonates, carboxylates and their chalcogene analogues and demonstrates how mastering the precursor chemistry permits us to control the chemical and phase composition, crystallinity, morphology, porosity and surface characteristics of produced nanomaterials. To Professor David Avnir on his 65th birthday.

Mid-IR supercontinuum generation beyond 7 μm using a silica-fluoride-chalcogenide fiber cascade

DEFF Research Database (Denmark)

Petersen, Christian Rosenberg; Moselund, Peter M.; Petersen, Christian

2016-01-01

and fluoride fibers by an amplified 1.55 μm nanosecond diode laser. By pumping a commercial Ge10As22Se68 single-material photonic crystal fiber with 135.7 mW of the pump continuum from 3.5- 4.4 μm, we obtained a continuum up to 7.2 μm with a total output power after the collimating lens of 54.5 mW, and 3.7 m......We report on an experimental demonstration of mid-infrared cascaded supercontinuum generation in commercial silica, fluoride, and chalcogenide fibers as a potentially cheap and practical alternative to direct pumping schemes. A pump continuum up to 4.4 μm was generated in cascaded silica...

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Science.gov (United States)

Fill, Matthias; Debernardi, Pierluigi; Felder, Ferdinand; Zogg, Hans

2013-11-01

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

Lead-chalcogenide mid-infrared vertical external cavity surface emitting lasers with improved threshold: Theory and experiment

Energy Technology Data Exchange (ETDEWEB)

Fill, Matthias [ETH Zurich, Laser Spectroscopy and Sensing Lab, 8093 Zurich (Switzerland); Phocone AG, 8005 Zurich (Switzerland); Debernardi, Pierluigi [IEIIT-CNR, Torino 10129 (Italy); Felder, Ferdinand [Phocone AG, 8005 Zurich (Switzerland); Zogg, Hans [ETH Zurich (Switzerland)

2013-11-11

Mid-infrared Vertical External Cavity Surface Emitting Lasers (VECSEL) based on narrow gap lead-chalcogenide (IV-VI) semiconductors exhibit strongly reduced threshold powers if the active layers are structured laterally for improved optical confinement. This is predicted by 3-d optical calculations; they show that lateral optical confinement is needed to counteract the anti-guiding features of IV-VIs due to their negative temperature dependence of the refractive index. An experimental proof is performed with PbSe quantum well based VECSEL grown on a Si-substrate by molecular beam epitaxy and emitting around 3.3 μm. With proper mesa-etching, the threshold intensity is about 8-times reduced.

An overview of the Fe-chalcogenide superconductors

International Nuclear Information System (INIS)

Wu, M K; Wen, Y C; Chen, T K; Chang, C C; Wu, P M; Wang, M J; Lin, P H; Lee, W C

2015-01-01

This review intends to summarize recent advancements in FeSe and related systems. The FeSe and related superconductors are currently receiving considerable attention for the high critical temperature (T C ) observed and for many similar features to the high T C cuprate superconductors. These similarities suggest that understanding the FeSe-based compounds could potentially help our understanding of the cuprates. We begin the review by presenting common features observed in the FeSe- and FeAs-based systems. Then we discuss the importance of careful control of the material preparation allowing for a systematic structure characterization. With this control, numerous rich phases have been observed. Importantly, we suggest that the Fe-vacancy ordered phases found in the FeSe-based compounds, which are non-superconducting magnetic Mott insulators, are the parent compounds of the superconductors. Superconductivity can emerge from the parent phases by disordering the Fe vacancy order, often by a simple annealing treatment. Then we review physical properties of the Fe chalcogenides, specifically the optical properties and angle-resolved photoemission spectroscopy (ARPES) results. From the literature, strong evidence points to the existence of orbital modification accompanied by a gap-opening, prior to the structural phase transition, which is closely related to the occurrence of superconductivity. Furthermore, strong lattice to spin coupling are important for the occurrence of superconductivity in FeSe. Therefore, it is believed that the iron selenides and related compounds will provide essential information to understand the origin of superconductivity in the iron-based superconductors, and possibly the superconducting cuprates. (topical review)

Ge and As x-ray absorption fine structure spectroscopic study of homopolar bonding, chemical order, and topology in Ge-As-S chalcogenide glasses

International Nuclear Information System (INIS)

Sen, S.; Ponader, C.W.; Aitken, B.G.

2001-01-01

The coordination environments of Ge and As atoms in Ge x As y S 1-x-y glasses with x:y=1:2, 1:1, and 2.5:1 and with wide-ranging S contents have been studied with Ge and As K-edge x-ray absorption fine structure spectroscopy. The coordination numbers of Ge and As atoms are found to be 4 and 3, respectively, in all glasses. The first coordination shells of Ge and As atoms in the stoichiometric and S-excess glasses consist of S atoms only, implying the preservation of chemical order at least over the length scale of the first coordination shell. As-As homopolar bonds are found to appear at low and intermediate levels of S deficiency, whereas Ge-Ge bonds are formed only in strongly S-deficient glasses indicating clustering of metal atoms and violation of chemical order in S-deficient glasses. The composition-dependent variation in chemical order in chalcogenide glasses has been hypothesized to result in topological changes in the intermediate-range structural units. The role of such topological transitions in controlling the structure-property relationships in chalcogenide glasses is discussed

Chalcogenide glass-ceramic with self-organized heterojunctions: application to photovoltaic solar cells

Directory of Open Access Journals (Sweden)

Zhang Xianghua

2018-01-01

Full Text Available In this work, we present for the first time the concept of chalcogenide glass-ceramic for photovoltaic applications with the GeSe2–Sb2Se3–CuI system. It has been demonstrated that thin films, deposited with the sputtering technique, are amorphous and can be crystallized with appropriate heat treatment. The thin film glass-ceramic behaves as a p-type semiconductor, even if it contains p-type Cu2GeSe3 and n-type Sb2Se3. The conductivity of Sb2Se3 has been greatly improved by appropriate iodine doping. The first photovoltaic solar cells based on the association of iodine-doped Sb2Se3 and the glass-ceramic thin films give a short-circuit current density JSC of 10 mA/cm2 and an open-circuit voltage VOC of 255 mV, with a power conversion efficiency of about 0.9%.

Low-phonon-frequency chalcogenide crystalline hosts for rare earth lasers operating beyond three microns

Science.gov (United States)

Payne, Stephen A.; Page, Ralph H.; Schaffers, Kathleen I.; Nostrand, Michael C.; Krupke, William F.; Schunemann, Peter G.

2000-01-01

The invention comprises a RE-doped MA.sub.2 X.sub.4 crystalline gain medium, where M includes a divalent ion such as Mg, Ca, Sr, Ba, Pb, Eu, or Yb; A is selected from trivalent ions including Al, Ga, and In; X is one of the chalcogenide ions S, Se, and Te; and RE represents the trivalent rare earth ions. The MA.sub.2 X.sub.4 gain medium can be employed in a laser oscillator or a laser amplifier. Possible pump sources include diode lasers, as well as other laser pump sources. The laser wavelengths generated are greater than 3 microns, as becomes possible because of the low phonon frequency of this host medium. The invention may be used to seed optical devices such as optical parametric oscillators and other lasers.

The pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 at high pressure: a mechanism for the zinc blende to cinnabar reconstructive phase transition

CERN Document Server

Kozlenko, D P; Ehm, L; Hull, S; Savenko, B N; Shchennikov, V V; Voronin, V I

2003-01-01

The structure of the pseudo-binary mercury chalcogenide alloy HgSe sub 0 sub . sub 7 S sub 0 sub . sub 3 has been studied by x-ray and neutron powder diffraction at pressures up to 8.5 GPa. A phase transition from the cubic zinc blende structure to the hexagonal cinnabar structure was observed at P approx 1 GPa. A phenomenological model of this reconstructive phase transition based on a displacement mechanism is proposed. Analysis of the geometrical relationship between the zinc blende and the cinnabar phases has shown that the possible order parameter for the zinc blende-cinnabar structural transformation is the spontaneous strain e sub 4. This assignment agrees with the previously observed high pressure behaviour of the elastic constants of some mercury chalcogenides.

Mid-infrared performance of single mode chalcogenide fibers

Science.gov (United States)

Cook, Justin; Sincore, Alex; Tan, Felix; El Halawany, Ahmed; Riggins, Anthony; Shah, Lawrence; Abouraddy, Ayman F.; Richardson, Martin C.; Schepler, Kenneth L.

2018-02-01

Due to the intrinsic absorption edge in silica near 2.4 μm, more exotic materials are required to transmit laser power in the IR such as fluoride or chalcogenide glasses (ChGs). In particular, ChG fibers offer broad IR transmission with low losses fibers at four different infrared wavelengths: 2053 nm, 2520 nm and 4550 nm. Polymer clad ChG fibers were drawn with 12.3 μm and 25 μm core diameters. Testing at 2053 nm was accomplished using a > 15 W, CW Tm:fiber laser. Power handling up to 10.2 W with single mode beam quality has been demonstrated, limited only by the available Tm:fiber output power. Anti-reflective coatings were successfully deposited on the ChG fiber facets, allowing up to 90.6% transmission with 12.2 MW/cm2 intensity on the facet. Single mode guidance at 4550 nm was also demonstrated using a quantum cascade laser (QCL). A custom optical system was constructed to efficiently couple the 0.8 NA QCL radiation into the 0.2 NA ChG fiber, allowing for a maximum of 78% overlap between the QCL radiation and fundamental mode of the fiber. With an AR-coated, 25 μm core diameter fiber, >50 mW transmission was demonstrated with > 87% transmission. Finally, we present results on fiber coupling from a free space Cr:ZnSe resonator at 2520 nm.

Ultrabroadband, Midinfrared Supercontinuum Generation in Dispersion Engineered As2Se3-Based Chalcogenide Photonic Crystal Fibers

Directory of Open Access Journals (Sweden)

Rim Cherif

2013-01-01

Full Text Available Small core As2Se3-based photonic crystal fibers (PCFs are accurately characterized for compact, high power, ultrabroadband, and coherent supercontinuum generation within few millimeters fiber length. Bandwidths of ~5.3 μm, 5 μm, and 3.2 μm were calculated for hole-to-hole spacings Λ= 3.5 μm, 4.5 μm, and 5.5 μm, respectively. The spectral broadening in the chalcogenide PCF is mainly caused by self-phase modulation and Raman-induced soliton self-frequency shift. The results show that small core As2Se3 PCFs are a promising candidate for mid-IR SCG up to ~8 μm.

Correlated structural and electronic phase transformations in transition metal chalcogenide under high pressure

Energy Technology Data Exchange (ETDEWEB)

Li, Chunyu, E-mail: licy@hpstar.ac.cn, E-mail: yanhao@hpstar.ac.cn; Ke, Feng; Yu, Zhenhai; Chen, Zhiqiang; Yan, Hao, E-mail: licy@hpstar.ac.cn, E-mail: yanhao@hpstar.ac.cn [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 (China); Hu, Qingyang [Center for High Pressure Science and Technology Advanced Research, Shanghai 201203 (China); Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015 (United States); Zhao, Jinggeng [Natural Science Research Center, Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150080 (China)

2016-04-07

Here, we report comprehensive studies on the high-pressure structural and electrical transport properties of the layered transition metal chalcogenide (Cr{sub 2}S{sub 3}) up to 36.3 GPa. A structural phase transition was observed in the rhombohedral Cr{sub 2}S{sub 3} near 16.5 GPa by the synchrotron angle dispersive X-ray diffraction measurement using a diamond anvil cell. Through in situ resistance measurement, the electric resistance value was detected to decrease by an order of three over the pressure range of 7–15 GPa coincided with the structural phase transition. Measurements on the temperature dependence of resistivity indicate that it is a semiconductor-to-metal transition in nature. The results were also confirmed by the electronic energy band calculations. Above results may shed a light on optimizing the performance of Cr{sub 2}S{sub 3} based applications under extreme conditions.

Magnetic excitations in iron chalcogenide superconductors.

Science.gov (United States)

Kotegawa, Hisashi; Fujita, Masaki

2012-10-01

Nuclear magnetic resonance and neutron scattering experiments in iron chalcogenide superconductors are reviewed to make a survey of the magnetic excitations in FeSe, FeSe 1- x Te x and alkali-metal-doped A x Fe 2- y Se 2 ( A = K, Rb, Cs, etc). In FeSe, the intimate relationship between the spin fluctuations and superconductivity can be seen universally for the variations in the off-stoichiometry, the Co-substitution and applied pressure. The isovalent compound FeTe has a magnetic ordering with different wave vector from that of other Fe-based magnetic materials. The transition temperature T c of FeSe increases with Te substitution in FeSe 1- x Te x with small x , and decreases in the vicinity of the end member FeTe. The spin fluctuations are drastically modified by the Te substitution. In the vicinity of the end member FeTe, the low-energy part of the spin fluctuation is dominated by the wave vector of the ordered phase of FeTe; however, the reduction of T c shows that it does not support superconductivity. The presence of same wave vector as that of other Fe-based superconductors in FeSe 1- x Te x and the observation of the resonance mode demonstrate that FeSe 1- x Te x belongs to the same group as most of other Fe-based superconductors in the entire range of x , where superconductivity is mediated by the spin fluctuations whose wave vector is the same as the nesting vector between the hole pockets and the electron pockets. On the other hand, the spin fluctuations differ for alkali-metal-doped A x Fe 2- y Se 2 and FeSe or other Fe-based superconductors in their wave vector and strength in the low-energy part, most likely because of the different Fermi surfaces. The resonance mode with different wave vector suggests that A x Fe 2- y Se 2 has an exceptional superconducting symmetry among Fe-based superconductors.

Pressure induced structural transitions in Lead Chalcogenides and its influence on thermoelectric properties

Science.gov (United States)

Petersen, John; Spinks, Michael; Borges, Pablo; Scolfaro, Luisa

2012-03-01

Lead chalcogenides, most notably PbTe and PbSe, have become an active area of research due to their thermoelectric (TE) properties. The high figure of merit (ZT) of these materials has brought much attention to them, due to their ability to convert waste heat into electricity, with a possible application being in engine exhaust. Here, we examine the effects of altering the lattice parameter on total ground state energy and the band gap using first principles calculations performed within Density Functional Theory and the Projector Augmented Wave approach and the Vienna Ab-initio Simulation Package (VASP-PAW) code. Both PbTe and PbSe, in NaCl, orthorhombic, and CsCl structures are considered. It is found that altering the lattice parameter, which is analogous to applying external pressure on the material experimentally, has notable effects on both ground state energy and the band gap. The implications of this behavior in the TE properties of these materials are analyzed.

The use of castor oil and ricinoleic acid in lead chalcogenide nanocrystal synthesis

Science.gov (United States)

Kyobe, Joseph W. M.; Mubofu, Egid B.; Makame, Yahya M. M.; Mlowe, Sixberth; Revaprasadu, Neerish

2016-08-01

A green solution-based thermolysis method for the synthesis of lead chalcogenide (PbE, E = S, Se, Te) nanocrystals in castor oil (CSTO) and its isolate ricinoleic acid (RA) is described. The blue shift observed from the optical spectra of CSTO and RA-capped PbE nanocrystals (NCs) confirmed the evidence of quantum confinement. The dimensions of PbE NCs obtained from NIR absorption spectra, transmission electron microscopy (TEM), and X-ray diffraction (XRD) studies were in good agreement. The particle sizes estimated were in the range of 20, 25, and 130 nm for castor oil-capped PbS, PbSe, and PbTe, respectively. Well-defined close to cubic-shaped particles were observed in the scanning electron microscopy (SEM) images of PbSe and PbTe nanocrystals. The high-resolution TEM and selective area electron diffraction (SAED) micrographs of the as-synthesized crystalline PbE NCs showed distinct lattice fringes with d-spacing distances corroborating with the standard values reported in literature.

Valence band electronic structure of Pd based ternary chalcogenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Lohani, H. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India); Mishra, P. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Goyal, R.; Awana, V.P.S. [National Physical Laboratory(CSIR), Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sekhar, B.R., E-mail: sekhar@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India)

2016-12-15

Highlights: • VB Photoemission study and DFT calculations on Pd based ternary superconductors are presented. • Nb{sub 2}Pd{sub 0.95}S{sub 5} shows a temperature dependent pseudogap. • VB spectral features of ternary superconductors are correlated to their structural geometry. - Abstract: We present a comparative study of the valence band electronic structure of Pd based ternary chalcogenide superconductors Nb{sub 2}Pd{sub 0.95}S{sub 5}, Ta{sub 2}Pd{sub 0.97}S{sub 6} and Ta{sub 2}Pd{sub 0.97}Te{sub 6} using experimental photoemission spectroscopy and density functional based theoretical calculations. We observe a qualitatively similarity between valence band (VB) spectra of Nb{sub 2}Pd{sub 0.95}S{sub 5} and Ta{sub 2}Pd{sub 0.97}S{sub 6}. Further, we find a pseudogap feature in Nb{sub 2}Pd{sub 0.95}S{sub 5} at low temperature, unlike other two compounds. We have correlated the structural geometry with the differences in VB spectra of these compounds. The different atomic packing in these compounds could vary the strength of inter-orbital hybridization among various atoms which leads to difference in their electronic structure as clearly observed in our DOS calculations.

Fragility of chalcogenide glass in relation to characteristic temperature T0/Tg

Science.gov (United States)

Shaker, A. M.; Shanker Rao, T.; Lilly Shanker Rao, T.; Venkataraman, K.

2018-03-01

The present study reports the mutual relationship between the fragility index m and the characteristic temperature T0/Tg. The fragility of the chalcogenide amorphous glass of Ge10Se50Te40 is calculated by utilizing glass transition temperature (Tg) measured by DSC (Differential Scanning Calorimetry) at different heating rates (β) in the range 5 to 20 K/min. Vogel-Fulcher-Tammann (VFT) equation is fitted to the data of Tg. In addition to the VFT method, three other methods are also used to evaluate m. The fragility index m of the Ge10Se50Te40 system showed the trend of decrease with increasing heating rate but remained stable around 22 for the heating rate 10 K/min. The value of m for the glass is near the lower limit (m ≈ 16) this indicates the alloy is a strong glass forming material in accordance of Angell’s interpretation of fragility. The calculated values of characteristic temperature T0/Tg is very close to 1 which also indicates that clearly the system is most fragile.

Scanning tunneling microscopy on iron-chalcogenide superconductor Fe(Se, Te) single crystal

International Nuclear Information System (INIS)

Ukita, R.; Sugimoto, A.; Ekino, T.

2011-01-01

We show scanning tunneling microscopy/spectroscopy (STM/STS) results of Fe(Se, Te). STM topography shows square arrangements of spots with the lattice spacing 0.37 nm. Te and Se atoms are randomly distributed in the STM topography. The STM topography of FeTe exhibits clusters of separated iron atoms. We have investigated the iron-chalcogenide superconductor Fe(Se, Te) using a low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) technique. STM topography at 4.9 K shows clear regular square arrangements of spots with the lattice spacing ∼0.37 nm, from which what we observe are attributed to Se or Te atomic plane. In the topography, brighter and darker atomic spots are randomly distributed, which are most probably due to Te and Se atoms, respectively. For the FeTe compound, the topography exhibits clusters of the bright spots probably arising from separated iron atoms distributing over several Te lattice sites. The STS measurements clarify the existence of the large-size gap with 2Δ = 0.4-0.6 eV.

Alkali-templated surface nanopatterning of chalcogenide thin films: a novel approach toward solar cells with enhanced efficiency.

Science.gov (United States)

Reinhard, Patrick; Bissig, Benjamin; Pianezzi, Fabian; Hagendorfer, Harald; Sozzi, Giovanna; Menozzi, Roberto; Gretener, Christina; Nishiwaki, Shiro; Buecheler, Stephan; Tiwari, Ayodhya N

2015-05-13

Concepts of localized contacts and junctions through surface passivation layers are already advantageously applied in Si wafer-based photovoltaic technologies. For Cu(In,Ga)Se2 thin film solar cells, such concepts are generally not applied, especially at the heterojunction, because of the lack of a simple method yielding features with the required size and distribution. Here, we show a novel, innovative surface nanopatterning approach to form homogeneously distributed nanostructures (<30 nm) on the faceted, rough surface of polycrystalline chalcogenide thin films. The method, based on selective dissolution of self-assembled and well-defined alkali condensates in water, opens up new research opportunities toward development of thin film solar cells with enhanced efficiency.

Surface relief and refractive index gratings patterned in chalcogenide glasses and studied by off-axis digital holography.

Science.gov (United States)

Cazac, V; Meshalkin, A; Achimova, E; Abashkin, V; Katkovnik, V; Shevkunov, I; Claus, D; Pedrini, G

2018-01-20

Surface relief gratings and refractive index gratings are formed by direct holographic recording in amorphous chalcogenide nanomultilayer structures As 2 S 3 -Se and thin films As 2 S 3 . The evolution of the grating parameters, such as the modulation of refractive index and relief depth in dependence of the holographic exposure, is investigated. Off-axis digital holographic microscopy is applied for the measurement of the photoinduced phase gratings. For the high-accuracy reconstruction of the wavefront (amplitude and phase) transmitted by the fabricated gratings, we used a computational technique based on the sparse modeling of phase and amplitude. Both topography and refractive index maps of recorded gratings are revealed. Their separated contribution in diffraction efficiency is estimated.

Propagation of evanescent waves in multimode chalcogenide fiber immersed in an aqueous acetone solution: theory and experiment

Science.gov (United States)

Korsakova, S. V.; Romanova, E. A.; Velmuzhov, A. P.; Kotereva, T. V.; Sukhanov, M. V.; Shiryaev, V. S.

2017-04-01

Chalcogenide fibers are considered as a base for creation of a fiber-optical platform for the mid-IR evanescent wave spectroscopy. In this work, transmittance of a multimode fiber made of Ge26As17Se25Te32 glass, immersed into an aqueous acetone solution was measured in the range of wavelengths 5 - 9 microns at various concentrations of the solution. A theoretical approach based on electromagnetic theory of optical fibers has been applied for analysis of evanescent modes propagation in the fiber. Attenuation coefficients calculated for each HE1m evanescent mode increase with the mode radial order m. This effect can be used for optimisation of the fiber-optic sensing elements for the mid-IR spectroscopy.

Investigation of the dynamics of a nonlinear optical response in glassy chalcogenide semiconductors by the pump–probe method

Science.gov (United States)

Romanova, E. A.; Kuzyutkina, Yu S.; Shiryaev, V. S.; Guizard, S.

2018-03-01

An analysis of the results of measurements by using the pump–probe method with a femtosecond resolution in time and computer simulation of the charge carrier kinetics have revealed two types of a nonlinear optical response in samples of chalcogenide glasses belonging to the As – S – Se system, irradiated by 50-fs laser pulses with a wavelength of 0.79 μm. The difference in the nonlinear dynamics is due to the difference in the photoexcitation character, because laser radiation can be absorbed either through bound states in the band gap or without their participation, depending on the ratio of the pump photon energy to the bandgap energy.

A library of atomically thin metal chalcogenides.

Science.gov (United States)

Zhou, Jiadong; Lin, Junhao; Huang, Xiangwei; Zhou, Yao; Chen, Yu; Xia, Juan; Wang, Hong; Xie, Yu; Yu, Huimei; Lei, Jincheng; Wu, Di; Liu, Fucai; Fu, Qundong; Zeng, Qingsheng; Hsu, Chuang-Han; Yang, Changli; Lu, Li; Yu, Ting; Shen, Zexiang; Lin, Hsin; Yakobson, Boris I; Liu, Qian; Suenaga, Kazu; Liu, Guangtong; Liu, Zheng

2018-04-01

Investigations of two-dimensional transition-metal chalcogenides (TMCs) have recently revealed interesting physical phenomena, including the quantum spin Hall effect 1,2 , valley polarization 3,4 and two-dimensional superconductivity 5 , suggesting potential applications for functional devices 6-10 . However, of the numerous compounds available, only a handful, such as Mo- and W-based TMCs, have been synthesized, typically via sulfurization 11-15 , selenization 16,17 and tellurization 18 of metals and metal compounds. Many TMCs are difficult to produce because of the high melting points of their metal and metal oxide precursors. Molten-salt-assisted methods have been used to produce ceramic powders at relatively low temperature 19 and this approach 20 was recently employed to facilitate the growth of monolayer WS 2 and WSe 2 . Here we demonstrate that molten-salt-assisted chemical vapour deposition can be broadly applied for the synthesis of a wide variety of two-dimensional (atomically thin) TMCs. We synthesized 47 compounds, including 32 binary compounds (based on the transition metals Ti, Zr, Hf, V, Nb, Ta, Mo, W, Re, Pt, Pd and Fe), 13 alloys (including 11 ternary, one quaternary and one quinary), and two heterostructured compounds. We elaborate how the salt decreases the melting point of the reactants and facilitates the formation of intermediate products, increasing the overall reaction rate. Most of the synthesized materials in our library are useful, as supported by evidence of superconductivity in our monolayer NbSe 2 and MoTe 2 samples 21,22 and of high mobilities in MoS 2 and ReS 2 . Although the quality of some of the materials still requires development, our work opens up opportunities for studying the properties and potential application of a wide variety of two-dimensional TMCs.

Chalcogenide oxygen reduction reaction catalysis: X-ray photoelectron spectroscopy with Ru, Ru/Se and Ru/S samples emersed from aqueous media

Energy Technology Data Exchange (ETDEWEB)

Lewera, A. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Department of Chemistry, Warsaw University, Pasteura 1, 02-093 Warsaw (Poland); Inukai, J. [Clean Energy Research Center, University of Yamanashi, 7-32 Miyamae-cho, Kofu 400-0006 (Japan); Zhou, W.P. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Cao, D. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); College of Material Science and Chemical Engineering, Harbin Engineering University, Harbin 150001 (China); Duong, H.T. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States); Alonso-Vante, N. [Laboratory of Electrocatalysis, UMR-CNRS 6503, University of Poitiers, F-86022 Poitiers (France)]. E-mail: Nicolas.Alonso.Vante@univ-poitiers.fr; Wieckowski, A. [Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (United States)]. E-mail: andrzej@scs.uiuc.edu

2007-05-10

Oxygen reduction Ru/Se and Ru/S fuel cell surface chalcogenide catalysts were prepared via chemical reaction of reduced Ru nanoparticles with selenium and sulfur in xylenes [D. Cao, A. Wieckowski, J. Inukai, N. Alonso-Vante, J. Electrochem. Soc. 153 (2006) A869]. The chalcogenide samples - as well as the starting chalcogens-free Ru nanoparticle material - were immobilized on a gold disk for X-ray Photoelectron Spectroscopy (XPS) characterization. While we found oxygen in most of the samples, predominantly from Ru oxides, we conclude that the oxygen on Ru/S may be located in subsurface sites: the subsurface oxygen. We also found that the transformation of the oxidized Ru black to metallic Ru required intensive electrochemical treatment, including hydrogen evolution. In contrast, five cyclic voltammetric scans in the potential range from 0.00 and 0.75 V versus RHE were sufficient to remove the oxygen forms from Ru/Se and, to a large extent, from Ru/S. We therefore conclude that Ru metal is protected against oxidation to Ru oxides by the chalcogens additives. The voltammetric treatment in the 0.00 and 0.75 V range also removed the SeO{sub 2} or SO {sub x} forms leaving anionic/elemental Se or S on the surface. Upon larger amplitude voltammetric cycling, from 0.00 to 1.20 V versus RHE, both Se and S were dissolved and the dissolution process was coincidental with the oxygen growth in/on the Ru samples.

Chalcogenide oxygen reduction reaction catalysis: X-ray photoelectron spectroscopy with Ru, Ru/Se and Ru/S samples emersed from aqueous media

International Nuclear Information System (INIS)

Lewera, A.; Inukai, J.; Zhou, W.P.; Cao, D.; Duong, H.T.; Alonso-Vante, N.; Wieckowski, A.

2007-01-01

Oxygen reduction Ru/Se and Ru/S fuel cell surface chalcogenide catalysts were prepared via chemical reaction of reduced Ru nanoparticles with selenium and sulfur in xylenes [D. Cao, A. Wieckowski, J. Inukai, N. Alonso-Vante, J. Electrochem. Soc. 153 (2006) A869]. The chalcogenide samples - as well as the starting chalcogens-free Ru nanoparticle material - were immobilized on a gold disk for X-ray Photoelectron Spectroscopy (XPS) characterization. While we found oxygen in most of the samples, predominantly from Ru oxides, we conclude that the oxygen on Ru/S may be located in subsurface sites: the subsurface oxygen. We also found that the transformation of the oxidized Ru black to metallic Ru required intensive electrochemical treatment, including hydrogen evolution. In contrast, five cyclic voltammetric scans in the potential range from 0.00 and 0.75 V versus RHE were sufficient to remove the oxygen forms from Ru/Se and, to a large extent, from Ru/S. We therefore conclude that Ru metal is protected against oxidation to Ru oxides by the chalcogens additives. The voltammetric treatment in the 0.00 and 0.75 V range also removed the SeO 2 or SO x forms leaving anionic/elemental Se or S on the surface. Upon larger amplitude voltammetric cycling, from 0.00 to 1.20 V versus RHE, both Se and S were dissolved and the dissolution process was coincidental with the oxygen growth in/on the Ru samples

Glass transition behavior and crystallization kinetics of Cu0.3(SSe20)0.7 chalcogenide glass

International Nuclear Information System (INIS)

Soliman, A.A.

2005-01-01

The glass transition behavior and crystallization kinetics of Cu 0.3 (SSe 20 ) 0.7 chalcogenide glass were investigated using differential scanning calorimetry (DSC), X-ray diffraction (XRD). Two crystalline phases (SSe 20 and Cu 2 Se) were identified after annealing the glass at 773 K for 24 h. The activation energy of the glass transition (E g ), the activation energy of crystallization (E c ), the Avrami exponent (n) and the dimensionality of growth (m) were determined. Results indicate that this glass crystallizes by a two-stage bulk crystallization process upon heating. The first transformation, in which SSe 20 precipitates from the amorphous matrix with a three-dimensional crystal growth. The second transformation, in which the residual amorphous phase transforms into Cu 2 Se compound with a two-dimensional crystal growth

KFeSbTe3: A quaternary chalcogenide aerogel for preferential adsorption of polarizable hydrocarbons and gases

KAUST Repository

Ahmed, Ejaz

2015-01-01

The first telluride-based quaternary aerogel KFeSbTe3 is synthesized by a sol-gel metathesis reaction between Fe(OAc)2 and K3SbTe3 in dimethyl formamide. The aerogel has an exceptionally large surface area 652 m2 g-1 which is amongst the highest reported for chalcogenide-based aerogels. This predominantly mesoporous material shows preferential adsorption for toluene vapors over cyclohexane or cyclopentane and CO2 over CH4 or H2. The remarkably high adsorption capacity for toluene (9.31 mmol g-1) and high selectivity for gases (CO2/H2: 121 and CO2/CH4: 75) suggest a potential use of such materials in adsorption-based separation processes for the effective purification of hydrocarbons and gases. © The Royal Society of Chemistry 2015.

Glass forming tendencies of chalcogenides of the system (As2Se3)sub(1-x):(T12Se)sub(x)

International Nuclear Information System (INIS)

Majid, C.A.

1982-07-01

In this paper glass forming capabilities of chalcogenide glasses based on As 2 Se 3 with T1 2 Se concentrations are discussed. The studies were made using the differential thermal analysis (DTA) technique. These studies show that the glass forming tendency of As 2 Se 3 decreases as the concentrations of T1 2 Se molecules are increased. Also these studies show that with addition of T1 2 Se, the glass transition temperature Tsub(g) of As 2 Se 3 decreases, suggesting a tendency for weaker bonding and hence less stability of T1-rich compositions. (author)

Infrared and Raman spectroscopy study of AsS chalcogenide films prepared by plasma-enhanced chemical vapor deposition.

Science.gov (United States)

Mochalov, Leonid; Dorosz, Dominik; Kudryashov, Mikhail; Nezhdanov, Aleksey; Usanov, Dmitry; Gogova, Daniela; Zelentsov, Sergey; Boryakov, Aleksey; Mashin, Alexandr

2018-03-15

AsS chalcogenide films, where As content is 60-40at.%, have been prepared via a RF non-equilibrium low-temperature argon plasma discharge, using volatile As and S as the precursors. Optical properties of the films were studied in UV-visible-NIR region in the range from 0.2 to 2.5μm. Infrared and Raman spectroscopy have been employed for the elucidation of the molecular structure of the newly developed material. It was established that PECVD films possess a higher degree of transparency (up to 80%) and a wider transparency window (>20μm) in comparison with the "usual" AsS thin films, prepared by different thermal methods, which is highly advantageous for certain applications. Copyright © 2017 Elsevier B.V. All rights reserved.

Wild Band Edges: The Role of Bandgap Grading and Band-Edge Fluctuations in High-Efficiency Chalcogenide Devices: Preprint

Energy Technology Data Exchange (ETDEWEB)

Repins, Ingrid; Mansfield, Lorelle; Kanevce, Ana; Jensen, Soren A.; Kuciauskas, Darius; Glynn, Stephen; Barnes, Teresa; Metzger, Wyatt; Burst, James; Jiang, Chun-Sheng; Dippo, Patricia; Harvey, Steve; Teeter, Glenn; Perkins, Craig; Egaas, Brian; Zakutayev, Andriy; Alsmeier, J.-H.; Lussky, T.; Korte, L.; Wilks, R. G.; Bar, M.; Yan, Y.; Lany, Stephan; Zawadzki, Pawel; Park, Ji-Sang; Wei, Suhuai

2016-06-16

Band-edge effects -- including grading, electrostatic fluctuations, bandgap fluctuations, and band tails -- affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In,Ga)Se2 devices, recent increases in diffusion length imply changes to optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties and defect formation energies, is examined.

Chalcogenide glasses for device application modified by high-energy irradiation

International Nuclear Information System (INIS)

Kavetskyy, T.; Shpotyuk, O.

2006-01-01

Full text: Chalcogenide glasses (ChG) or chemical compounds of chalcogen atoms (S, Se or Te, but not O) with some elements from IV-th and V-th groups of the Periodic Table (typically As, Ge, Sb, Bi, etc. ) obtained by melt quenching, are a perspective for application in modern optoelectronics, photonics, telecommunications, acoustic-optics, xerography, lithography, etc. This uniqueness is due to extremely high sensitivity of ChG to external influences, associated, presumably, with high steric flexibility proper to glassy-like network with low average atomic coordination (chalcogen atoms are typically two-fold coordinated in a glassy-like network), relatively large internal free volume and specific lp-character of electronic states localized at a valence-band top. However, at present, the further possibilities for conventional chemical/technological methods to prepare ChG are fully exhausted. One of the steps to resolve this problem is post-technological modification of ChG using possibilities of high-energy irradiation. This work is focused on new advanced radiation-modified ChG for device application in optoelectronics. The attractive practical use of these non-crystalline materials is tightly connected with radiation-induced defect formation processes. For the first time, we consider the possibilities of Raman scattering along with X-ray diffraction and positron annihilation lifetime spectroscopy to characterize microstructural mechanisms of radiation-induced effects in ChG. (authors)

Strong correlations and the search for high-Tc superconductivity in chromium pnictides and chalcogenides

Science.gov (United States)

Pizarro, J. M.; Calderón, M. J.; Liu, J.; Muñoz, M. C.; Bascones, E.

2017-02-01

Undoped iron superconductors accommodate n =6 electrons in five d orbitals. Experimental and theoretical evidence shows that the strength of correlations increases with hole doping, as the electronic filling approaches half filling with n =5 electrons. This evidence delineates a scenario in which the parent compound of iron superconductors is the half-filled system, in analogy to cuprate superconductors. In cuprates the superconductivity can be induced upon electron or hole doping. In this work we propose to search for high-Tc superconductivity and strong correlations in chromium pnictides and chalcogenides with n slave-spin and multiorbital random-phase-approximation calculations we analyze the strength of the correlations and the superconducting and magnetic instabilities in these systems with the main focus on LaCrAsO. We find that electron-doped LaCrAsO is a strongly correlated system with competing magnetic interactions, with (π ,π ) antiferromagnetism and nodal d -wave pairing being the most plausible magnetic and superconducting instabilities, respectively.

Line defects on As2Se3-Chalcogenide photonic crystals for the design of all-optical power splitters and digital logic gates

Science.gov (United States)

Saghaei, Hamed; Zahedi, Abdulhamid; Karimzadeh, Rouhollah; Parandin, Fariborz

2017-10-01

In this paper, a triangular two-dimensional photonic crystal (PhC) of As2Se3-chalcogenide rods in air is presented and its photonic band diagram is calculated by plane wave method. In this structure, an optical waveguide is obtained by creating a line defect (eliminating rods) in diagonal direction of PhC. Numerical simulations based on finite difference time domain method show that when self-collimated beams undergo total internal reflection at the PhC-air interface, a total reflection of 90° occurs for the output beams. We also demonstrate that by decreasing the radius of As2Se3-chalcogenide instead of eliminating a diagonal line, a two-channel optical splitter will be designed. In this case, incoming self-collimated beams can be divided into the reflected and transmitted beams with arbitrary power ratio by adjusting the value of their radii. Based on these results, we propose a four-channel optical splitter using four line defects. The power ratio among output channels can be controlled systematically by varying the radius of rods in the line defects. We also demonstrate that by launching two optical sources with the same intensity and 90° phase difference from both perpendicular faces of the PhC, two logic OR and XOR gates will be achieved at the output channels. These optical devices have some applications in photonic integrated circuits for controlling and steering (managing) the light as desired.

Direct femtosecond laser writing of buried infrared waveguides in chalcogenide glasses

Science.gov (United States)

Le Coq, D.; Bychkov, E.; Masselin, P.

2016-02-01

Direct laser writing technique is now widely used in particular in glass, to produce both passive and active photonic devices. This technique offers a real scientific opportunity to generate three-dimensional optical components and since chalcogenide glasses possess transparency properties from the visible up to mid-infrared range, they are of great interest. Moreover, they also have high optical non-linearity and high photo-sensitivity that make easy the inscription of refractive index modification. The understanding of the fundamental and physical processes induced by the laser pulses is the key to well-control the laser writing and consequently to realize integrated photonic devices. In this paper, we will focus on two different ways allowing infrared buried waveguide to be obtained. The first part will be devoted to a very original writing process based on a helical translation of the sample through the laser beam. In the second part, we will report on another original method based on both a filamentation phenomenon and a point by point technique. Finally, we will demonstrate that these two writing techniques are suitable for the design of single mode waveguide for wavelength ranging from the visible up to the infrared but also to fabricate optical components.

Nanoscale Device Properties of Tellurium-based Chalcogenide Compounds

Science.gov (United States)

Dahal, Bishnu R.

The great progress achieved in miniaturization of microelectronic devices has now reached a distinct bottleneck, as devices are starting to approach the fundamental fabrication and performance limit. Even if a major breakthrough is made in the fabrication process, these scaled down electronic devices will not function properly since the quantum effects can no longer be neglected in the nanoscale regime. Advances in nanotechnology and new materials are driving novel technologies for future device applications. Current microelectronic devices have the smallest feature size, around 10 nm, and the industry is planning to switch away from silicon technology in the near future. The new technology will be fundamentally different. There are several leading technologies based on spintronics, tunneling transistors, and the newly discovered 2-dimensional material systems. All of these technologies are at the research level, and are far from ready for use in making devices in large volumes. This dissertation will focus on a very promising material system, Te-based chalcogenides, which have potential applications in spintronics, thermoelectricity and topological insulators that can lead to low-power-consumption electronics. Very recently it was predicted and experimentally observed that the spin-orbit interaction in certain materials can lead to a new electronic state called topological insulating phase. The topological insulator, like an ordinary insulator, has a bulk energy gap separating the highest occupied electronic band from the lowest empty band. However, the surface states in the case of a three-dimensional or edge states in a two-dimensional topological insulator allow electrons to conduct at the surface, due to the topological character of the bulk wavefunctions. These conducting states are protected by time-reversal symmetry, and cannot be eliminated by defects or chemical passivation. The edge/surface states satisfy Dirac dispersion relations, and hence the physics

Interaction between titanium and sulfuric acid in the electrodeposition of chalcogenide semiconductors

International Nuclear Information System (INIS)

Ortega, J.

1992-01-01

Some chalcogenide electrodeposition problems in the cathodic potential range from -0.30 V to-0.65 V vs SCE may be related to the Titanium corrosion-passivation process in aqueous solutions of sulfuric acid. This feature was discovered accidentally when it was attempted to electrodeposit Cd-Hg-Te compounds from a ternary plating bath; an anodic current of about 10 m/cm 2 was produced in the Titanium cathode at -0.50 V vs SCE, while at -0.40 and -0.60 V vs SCE the current was cathodic. In order to explain this feature, a first study has been carried out to determine the influence of the temperature and sulfuric acid concentration on the passivation current density, passivation potential and Flade potential for passivation. From Arrhenius plots of the passivation currents an apparent activation energy of 63.8 kJ/mole for Titanium passivation in sulfuric acid at -0.50 V vs SCE was obtained. The electrochemical stability of passivated Titanium was explained by assuming that the oxide film formed exhibits n-type semiconducting character, since passivation data was in good agreement with interfacial energetics for n-TiO 2 in aqueous solutions of sulfuric acid.(Author)

The influence of Ge on optical and thermo- mechanical properties of S-Se chalcogenide glasses

Science.gov (United States)

Samudrala, Kavitha; Babu Devarasetty, Suresh

2018-05-01

S-Se-Ge glasses were prepared by melt quenching method to investigate the effect of Germanium on thermo-mechanical and optical properties of chalcogenide glasses. The glassy nature of the samples has been verified by x-ray diffraction and DSC studies that the samples are glassy in nature. The optical band gap of the samples was estimated by the absorption spectrum fitting method. The optical band gap increased from 1.61 ev for x = 0 sample to 1.90 ev for x = 40 sample and is explained in terms of cohesive energies. The basic thermo-mechanical parameters such as micro-hardness, Volume (Vh) and formation energy (Eh) of micro voids in the glassy network, as well as the modulus of Elasticity (E) have been calculated for prepared glasses.in present glasses. The variation in these parameters with Ge content correlated with heat of atomization of alloys.

High-precision measurements of the compressibility of chalcogenide glasses at a hydrostatic pressure up to 9 GPa

Energy Technology Data Exchange (ETDEWEB)

Brazhkin, V. V., E-mail: brazhkin@hppi.troitsk.ru [Vereshchagin Institute of High-Pressure Physics (Russian Federation); Bychkov, E. [Universite du Littoral, LPCA, UMR 8101 CNRS (France); Tsiok, O. B. [Vereshchagin Institute of High-Pressure Physics (Russian Federation)

2016-08-15

The volumes of glassy germanium chalcogenides GeSe{sub 2}, GeS{sub 2}, Ge{sub 17}Se{sub 83}, and Ge{sub 8}Se{sub 92} are precisely measured at a hydrostatic pressure up to 8.5 GPa. The stoichiometric GeSe{sub 2} and GeS{sub 2} glasses exhibit elastic behavior in the pressure range up to 3 GPa, and their bulk modulus decreases at pressures higher than 2–2.5 GPa. At higher pressures, inelastic relaxation processes begin and their intensity is proportional to the logarithm of time. The relaxation rate for the GeSe{sub 2} glasses has a pronounced maximum at 3.5–4.5 GPa, which indicates the existence of several parallel structural transformation mechanisms. The nonstoichiometric glasses exhibit a diffuse transformation and inelastic behavior at pressures above 1–2 GPa. The maximum relaxation rate in these glasses is significantly lower than that in the stoichiometric GeSe{sub 2} glasses. All glasses are characterized by the “loss of memory” of history: after relaxation at a fixed pressure, the further increase in the pressure returns the volume to the compression curve obtained without a stop for relaxation. After pressure release, the residual densification in the stoichiometric glasses is about 7% and that in the Ge{sub 17}Se{sub 83} glasses is 1.5%. The volume of the Ge{sub 8}Se{sub 92} glass returns to its initial value within the limits of experimental error. As the pressure decreases, the effective bulk moduli of the Ge{sub 17}Se{sub 83} and Ge{sub 8}Se{sub 92} glasses coincide with the moduli after isobaric relaxation at the stage of increasing pressure, and the bulk modulus of the stoichiometric GeSe{sub 2} glass upon decreasing pressure noticeably exceeds the bulk modulus after isobaric relaxation at the stage of increasing pressure. Along with the reported data, our results can be used to draw conclusions regarding the diffuse transformations in glassy germanium chalcogenides during compression.

Structural characterization of two new quaternary chalcogenides: CuCo{sub 2}InTe{sub 4} and CuNi{sub 2}InTe{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Delgado, Gerzon E.; Grima-Gallardo, Pedro; Nieves, Luis, E-mail: gerzon@ula.ve [Universidad de Los Andes, Merida (Venezuela, Bolivarian Republic of); Cabrera, Humberto [Centro Multidisciplinario de Ciencias, Instituto Venezolano de Investigaciones Cientificas (IVIC), Merida (Venezuela, Bolivarian Republic of); Glenn, Jennifer R.; Aitken, Jennifer A. [Department of Chemistry and Biochemistry, Duquesne University, Pittsburgh, PA (United States)

2016-11-15

The crystal structure of the chalcogenide compounds CuCo{sub 2}InTe{sub 4} and CuNi{sub 2}InTe{sub 4} , two new members of the I-II{sub 2}-III-VI{sub 4} family, were characterized by Rietveld refinement using X-ray powder diffraction data. Both materials crystallize in the tetragonal space group I4-bar 2m (No. 121), Z = 2, with a stannite-type structure, with the binaries CoTe and NiTe as secondary phases. (author)

How metallic is the binding state of indium hosted by excess-metal chalcogenides in ore deposits?

Science.gov (United States)

Ondina Figueiredo, Maria; Pena Silva, Teresa; Oliveira, Daniel; Rosa, Diogo

2010-05-01

Discovered in 1863, indium is nowadays a strategic scarce metal used both in classical technologic fields (like low melting-temperature alloys and solders) and in innovative nano-technologies to produce "high-tech devices" by means of new materials, namely liquid crystal displays (LCDs), organic light emitting diodes (OLEDs) and the recently introduced transparent flexible thin-films manufactured with ionic amorphous oxide semiconductors (IAOS). Indium is a typical chalcophile element, seldom forming specific minerals and occurring mainly dispersed within polymetallic sulphides, particularly with excess metal ions [1]. The average content of indium in the Earth's crust is very low but a further increase in its demand is still expected in the next years, thus focusing a special interest in uncovering new exploitation sites through promising polymetallic sulphide ores - e.g., the Iberian Pyrite Belt (IPB) [2] - and in improving recycling technologies. Indium recovery stands mostly on zinc extraction from sphalerite, the natural cubic sulphide which is the prototype of so-called "tetrahedral sulphides" where metal ions fill half of the available tetrahedral sites within the cubic closest packing of sulphur anions where the double of unfilled interstices are available for further in-filling. It is worth remarking that such packing array is particularly suitable for accommodating polymetallic cations by filling closely located interstitial sites [3] as happens in excess-metal tetrahedral sulphides - e.g. bornite, ideally Cu5FeS4, recognized as an In-carrying mineral [4]. Studying the tendency towards In-In interactions able of leading to the formation of polycations would efficiently contribute to understand indium crystal chemistry and the metal binding state in natural chalcogenides. Accordingly, an X-ray absorption near-edge spectroscopy (XANES) study at In L3-edge was undertaken using the instrumental set-up of ID21 beamline at the ESRF (European Synchrotron

Precursor directed synthesis--"molecular" mechanisms in the Soft Chemistry approaches and their use for template-free synthesis of metal, metal oxide and metal chalcogenide nanoparticles and nanostructures.

Science.gov (United States)

Seisenbaeva, Gulaim A; Kessler, Vadim G

2014-06-21

This review provides an insight into the common reaction mechanisms in Soft Chemistry processes involved in nucleation, growth and aggregation of metal, metal oxide and chalcogenide nanoparticles starting from metal-organic precursors such as metal alkoxides, beta-diketonates, carboxylates and their chalcogene analogues and demonstrates how mastering the precursor chemistry permits us to control the chemical and phase composition, crystallinity, morphology, porosity and surface characteristics of produced nanomaterials.

Synthesis of metals chalcogenides nano-particles from H{sub 2}X (X=S, Se, Te) produced electrochemically; Synthese de nanoparticules de chalcogenures de metaux a partir de H{sub 2}X (X=S, Se, Te) produit electrochimiquement

Energy Technology Data Exchange (ETDEWEB)

Bastide, S.; Tena-Zaera, R.; Alleno, E.; Godart, C.; Levy-Clement, C. [Centre National de la Recherche Scientifique (CNRS), Lab. de Chimie Metallurgique des Terres Rares, 94 - Thiais (France); Hodes, G. [Weizmann Institute of Science, Rehovot (Israel)

2006-07-01

In this work, an electrochemical method to produce H{sub 2}X (X=S, Se, Te) hydrides in a controlled way (without being able to store them) and to transfer them directly in the synthesis reactor has been perfected. By this method, the use of H{sub 2}Te has been possible. The method uses the reduction of the elementary chalcogenide in acid medium. The Te being conductor, it can be directly used as electrode, on the other hand S and Se are insulators. Nevertheless, graphite-S or Se conducing composite electrodes can also be used. When the electrolyte composition (pH, salts presence) is well adjusted, the essential of the cathodic current is consumed by the chalcogenide reduction (low evolution of H{sub 2}) with faradic yields of about 100% for H{sub 2}S and H{sub 2}Se and 40% for HeTe. The use of H{sub 2}X allows the synthesis of nano-particles of metals chalcogenides directly by reaction with dissolved metallic salts in aqueous or organic medium and precipitation. Thus it has been possible to prepare all the CdX compounds under the form of nano-particles of diameter between 3 and 5 nm by bubbling of the gaseous hydrides in aqueous acetate solutions of Cd. In producing concomitantly H{sub 2}S and H{sub 2}Se, nano-particles of solid solutions CdS{sub x}Se{sub 1-x} have been synthesized too. (O.M.)

Conduction mechanism and the dielectric relaxation process of a-Se75Te25-xGax (x=0, 5, 10 and 15 at wt%) chalcogenide glasses

International Nuclear Information System (INIS)

Yahia, I.S.; Hegab, N.A.; Shakra, A.M.; Al-Ribaty, A.M.

2012-01-01

Se 75 Te 25-x Ga x (x=0, 5, 10 and 15 at wt%) chalcogenide compositions were prepared by the well known melt quenching technique. Thin films with different thicknesses in the range (185-630 nm) of the obtained compositions were deposited by thermal evaporation technique. X-ray diffraction patterns indicate that the amorphous nature of the obtained films. The ac conductivity and the dielectric properties of the studied films have been investigated in the frequency range (10 2 -10 5 Hz) and in the temperature range (293-333 K). The ac conductivity was found to obey the power low ω s where s≤1 independent of film thickness. The temperature dependence of both ac conductivity and the exponent s can be well interpreted by the correlated barrier hopping (CBH) model. The experimental results of the dielectric constant ε 1 and dielectric loss ε 2 are frequency and temperature dependent. The maximum barrier height W m calculated from the results of the dielectric loss according to the Guintini equation, and agrees with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott for chalcogenide glasses. The density of localized state was estimated for the studied film compositions. The variation of the studied properties with Ga content was also investigated. The correlation between the ac conduction and the dielectric properties were verified.

Physico-chemical and optical properties of Er3+-doped and Er3+/Yb3+-co-doped Ge25Ga9.5Sb0.5S65 chalcogenide glass.

Czech Academy of Sciences Publication Activity Database

Himics, D.; Střižík, L.; Holubová, J.; Beneš, L.; Pálka, K.; Frumarová, Božena; Oswald, Jiří; Tverjanovich, A. S.; Wágner, T.

2017-01-01

Roč. 89, č. 4 (2017), s. 429-436 ISSN 0033-4545. [International Conference Solid State Chemistry 2016 /12./. Prague, 18.09.2016-23.09.2016] Institutional support: RVO:61389013 ; RVO:68378271 Keywords : chalcogenide glasses * erbium * Ga-Ge-Sb-S Subject RIV: CA - Inorganic Chemistry; CA - Inorganic Chemistry (FZU-D) OBOR OECD: Inorganic and nuclear chemistry; Inorganic and nuclear chemistry (FZU-D) Impact factor: 2.626, year: 2016

Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film

KAUST Repository

San Roman Alerigi, Damian; Anjum, Dalaver H.; Zhang, Yaping; Yang, Xiaoming; Ben Slimane, Ahmed; Ng, Tien Khee; Hedhili, Mohamed N.; Alsunaidi, Mohammad; Ooi, Boon S.

2013-01-01

In this paper, we investigate the effect of electron beam irradiation on the dielectric properties of As 2 S 3 chalcogenide glass. By means of low-loss electron energy loss spectroscopy, we derive the permittivity function, its dispersive relation, and calculate the refractive index and absorption coefficients under the constant permeability approximation. The measured and calculated results show a heretofore unseen phenomenon: a reduction in the permittivity of ? 40 %. Consequently a reduction of the refractive index of 20%, hence, suggests a conspicuous change in the optical properties of the material under irradiation with a 300 keV electron beam. The plausible physical phenomena leading to these observations are discussed in terms of the homopolar and heteropolar bond dynamics under high energy absorption. The reported phenomena, exhibited by As 2 S 3-thin film, can be crucial for the development of photonics integrated circuits using electron beam irradiation method. © 2013 American Institute of Physics.

Molecular Control of the Nanoscale: Effect of Phosphine–Chalcogenide Reactivity on CdS–CdSe Nanocrystal Composition and Morphology

Energy Technology Data Exchange (ETDEWEB)

Ruberu, T. Purnima A.; Albright, Haley R.; Callis, Brandon; Ward, Brittney; Cisneros, Joana; Fan, Hua-Jun; Vela, Javier

2012-04-22

We demonstrate molecular control of nanoscale composition, alloying, and morphology (aspect ratio) in CdS–CdSe nanocrystal dots and rods by modulating the chemical reactivity of phosphine–chalcogenide precursors. Specific molecular precursors studied were sulfides and selenides of triphenylphosphite (TPP), diphenylpropylphosphine (DPP), tributylphosphine (TBP), trioctylphosphine (TOP), and hexaethylphosphorustriamide (HPT). Computational (DFT), NMR (31P and 77Se), and high-temperature crossover studies unambiguously confirm a chemical bonding interaction between phosphorus and chalcogen atoms in all precursors. Phosphine–chalcogenide precursor reactivity increases in the order: TPPE < DPPE < TBPE < TOPE < HPTE (E = S, Se). For a given phosphine, the selenide is always more reactive than the sulfide. CdS1–xSex quantum dots were synthesized via single injection of a R3PS–R3PSe mixture to cadmium oleate at 250 °C. X-ray diffraction (XRD), transmission electron microscopy (TEM), and UV/Vis and PL optical spectroscopy reveal that relative R3PS and R3PSe reactivity dictates CdS1–xSex dot chalcogen content and the extent of radial alloying (alloys vs core/shells). CdS, CdSe, and CdS1–xSex quantum rods were synthesized by injection of a single R3PE (E = S or Se) precursor or a R3PS–R3PSe mixture to cadmium–phosphonate at 320 or 250 °C. XRD and TEM reveal that the length-to-diameter aspect ratio of CdS and CdSe nanorods is inversely proportional to R3PE precursor reactivity. Purposely matching or mismatching R3PS–R3PSe precursor reactivity leads to CdS1–xSex nanorods without or with axial composition gradients, respectively. We expect these observations will lead to scalable and highly predictable “bottom-up” programmed syntheses of finely heterostructured nanomaterials with well-defined architectures and properties that are tailored for precise applications.

Influence of annealing conditions on the optical and structural properties of spin-coated As(2)S(3) chalcogenide glass thin films.

Science.gov (United States)

Song, Shanshan; Dua, Janesha; Arnold, Craig B

2010-03-15

Spin-coating of chalcogenide glass is a low-cost, scalable method to create optical grade thin films, which are ideal for visible and infrared applications. In this paper, we study the influence of annealing on optical parameters of As(2)S(3) films by examining UV-visible and infrared spectroscopy and correlating the results to changes in the physical properties associated with solvent removal. Evaporation of excess solvent results in a more highly coordinated, denser glass network with higher index and lower absorption. Depending on the annealing temperature and time, index values ranging from n = 2.1 to the bulk value (n = 2.4) can be obtained, enabling a pathway to materials optimization.

Electrical switching phenomenon and memory effect in the semiconductor chalcogenide glass Ge0.10 As0.20 Te0.70

International Nuclear Information System (INIS)

Haro, M.; Marquez, E.; Villares, P.; Jimenez-Garay, R.

1987-01-01

Electrical switching phenomenon, as well as the memory effect in the semiconductor chalcogenide glass Ge 0.10 As 0.20 Te 0.70 has been studied. A device with a plano-punctual interelectrode configuration has been designed and built, so that the electrical stimuli may be applied correctly. This device permits adequate positioning of the upper electrode, as well as contact pressure regulation. The I-V characteristics in the OFF-state have been obtained, showing a marked non-linear character. Equally, a relation has been found between the threshold voltage and electrical resistance parameters, indicating that the electrical power giving rise to the phenomenon is constant. Finally, memory effects showing a sudden reduction in electrical resistance, as well as interelectrode filaments, have been observed. (author)

Surface functionalization of two-dimensional metal chalcogenides by Lewis acid-base chemistry

Science.gov (United States)

Lei, Sidong; Wang, Xifan; Li, Bo; Kang, Jiahao; He, Yongmin; George, Antony; Ge, Liehui; Gong, Yongji; Dong, Pei; Jin, Zehua; Brunetto, Gustavo; Chen, Weibing; Lin, Zuan-Tao; Baines, Robert; Galvão, Douglas S.; Lou, Jun; Barrera, Enrique; Banerjee, Kaustav; Vajtai, Robert; Ajayan, Pulickel

2016-05-01

Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid-base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+n(InSe)] coordination complexes. Using this strategy, we fabricate planar p-n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid-base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device.

Synthesis and Characterization of Quaternary Metal Chalcogenide Aerogels for Gas Separation and Volatile Hydrocarbon Adsorption

KAUST Repository

Edhaim, Fatimah A.

2017-11-01

In this dissertation, the metathesis route of metal chalcogenide aerogel synthesis was expanded by conducting systematic studies between polysulfide building blocks and the 1st-row transition metal linkers. Resulting materials were screened as sorbents for selective gas separation and volatile organic compounds adsorption. They showed preferential adsorption of polarizable gases (CO2) and organic compounds (toluene). Ion exchange and heavy metal remediation properties have also been demonstrated. The effect of the presence of different counter-ion within chalcogel frameworks on the adsorption capacity of the chalcogels was studied on AFe3Zn3S17 (A= K, Na, and Rb) chalcogels. The highest adsorption capacity toward hydrocarbons and gases was observed on Rb based chalcogels. Adopting a new building block [BiTe3]3- with the 1st-row transition metal ions results in the formation of three high BET surface area chalcogels, KCrBiTe3, KZnBiTe3, and KFeBiTe3. The resulting chalcogels showed preferential adsorption of toluene vapor, and remarkable selectivity of CO2, indicating the potential future use of chalcogels in adsorption-based gas or hydrocarbon separation processes. The synthesis and characterization of the rare earth chalcogels NaYSnS4, NaGdSnS4, and NaTbSnS4 are also reported. Rare earth metal ions react with the thiostannate clusters in formamide solution forming extended polymeric networks by gelation. Obtained chalcogels have high BET surface areas, and showed notable adsorption capacity toward CO2 and toluene vapor. These chalcogels have also been engaged in the absorption of different organic molecules. The results reveal the ability of the chalcogels to distinguish among organic molecules on their electronic structures; hence, they could be used as sensors. Furthermore, the synthesis of metal chalcogenide aerogels Co0.5Sb0.33MoS4 and Co0.5Y0.33MoS4 by the sol-gel method is reported. In this system, the building blocks [MoS4]2- chelated with Co2+ and (Sb3

Pulsed laser deposition of chalcogenide sulfides from multi- and single-component targets: the non-stoichiometric material transfer

DEFF Research Database (Denmark)

Schou, Jørgen; Ganskukh, Mungunshagai; Ettlinger, Rebecca Bolt

2018-01-01

The mass transfer from target to films is incongruent for chalcogenide sulfides in contrast to the expectations of pulsed laser deposition (PLD) as a stoichiometric film growth process. Films produced from a CZTS (Cu2ZnSnS4) multi-component target have no Cu below a fluence threshold of 0.2 J/cm2......, and the Cu content is also very low at low fluence from a single-component target. Above this threshold, the Cu content in the films increases almost linearly up to a value above the stoichiometric value, while the ratio of the concentration of the other metals Zn to Sn (Zn/Sn) remains constant. Films...... of a similar material CTS (Cu2SnS3) have been produced by PLD from a CTS target and exhibits a similar trend in the same fluence region. The results are discussed on the basis of solid-state data and the existing data from the literature....

Thallous chalcogenide (Tl 6I 4Se) for radiation detection at X-ray and γ-ray energies

Science.gov (United States)

Liu, Zhifu; Peters, John A.; Wessels, Bruce W.; Johnsen, Simon; Kanatzidis, Mercouri G.

2011-12-01

The optical and charge transport properties of the thallous chalcogenide compound Tl6I4Se were characterized. The semiconductor crystals are grown by the modified Bridgman method. We have measured the refractive index, and absorption coefficient of the compound ranging from 300 to 1500 nm by analysis of the UV-vis-near IR transmission and reflection spectra. The band gap is 1.8 eV. For the evaluation of detector performance, the mobility-lifetime products for both the electron and hole carriers were measured. Tl6I4Se has mobility-lifetime products of 7.1×10-3 and 5.9×10-4 cm2/V for electron and hole carriers, respectively, which are comparable to those of Cd0.9Zn0.1Te. The γ-ray spectrum for a Tl6I4Se detector was measured. Its response to the 122 keV of 57Co source is comparable to that of Cd0.9Zn0.1Te.

Pr4N2S3 and Pr4N2Se3: two non-isostructural praseodymium(iii) nitride chalcogenides

International Nuclear Information System (INIS)

Lissner, Falk; Schleid, Thomas

2005-01-01

The non-isostructural nitride chalcogenides of praseodymium, Pr 4 N 2 S 3 and Pr 4 N 2 Se 3 , are formed by the reaction of the praseodymium metal with sodium azide (NaN 3 ), praseodymium trihalide (PrX 3 ; X = Cl, Br, I) and the respective chalcogen (sulfur or selenium) at 900 C in evacuated silica ampoules after seven days. Both crystallize monoclinically in space group C2/c (Pr 4 N 2 S 3 : a = 1788.57(9), b = 986.04(5), c = 1266.49(6) pm, β = 134.546(7) , Z = 8; Pr 4 N 2 Se 3 : a = 1311.76(7), b = 1017.03(5), c = 650.42(3) pm, β = 90.114(6) , Z = 4). The crystal structures of both compounds show a layered construction, dominated by N 3- -centred (Pr 3+ ) 4 tetrahedra which share a common edge first. Continuing linkage of the so resulting bitetrahedral [N 2 Pr 6 ] 12+ units via the non-connected vertices to layers according to [stack ∞ 2 ]{[N(Pr) 2/2 e (Pr') 2/2 v ] 3+ } forms different kinds of tetrahedral nets which can be described as layers consisting of ''four- and eight-rings'' for Pr 4 N 2 S 3 and as layers of ''six-rings'' for Pr 4 N 2 Se 3 . Whereas the crystal structure of Pr 4 N 2 S 3 exhibits four different Pr 3+ cations with coordination numbers of six (2 x) and seven (2 x) against N 3- and S 2- , the number of cations in the nitride selenide (Pr 4 N 2 Se 3 ) is reduced to half (Pr1 and Pr2) also having six- and sevenfold anionic coordination spheres. Further motifs for the connection of [NM 4 ] 9+ tetrahedra in crystal structures of nitride chalcogenides and halides of the rare-earth elements with ratios of N: M = 1: 2 are presented and discussed. (Abstract Copyright [2005], Wiley Periodicals, Inc.) [de

Wireless Chalcogenide Nanoionic-Based Radio-Frequency Switch

Science.gov (United States)

Nessel, James; Miranda, Felix

2013-01-01

A new nonvolatile nanoionic switch is powered and controlled through wireless radio-frequency (RF) transmission. A thin layer of chalcogenide glass doped with a metal ion, such as silver, comprises the operational portion of the switch. For the switch to function, an oxidizable electrode is made positive (anode) with respect to an opposing electrode (cathode) when sufficient bias, typically on the order of a few tenths of a volt or more, is applied. This action causes the metal ions to flow toward the cathode through a coordinated hopping mechanism. At the cathode, a reduction reaction occurs to form a metal deposit. This metal deposit creates a conductive path that bridges the gap between electrodes to turn the switch on. Once this conductive path is formed, no further power is required to maintain it. To reverse this process, the metal deposit is made positive with respect to the original oxidizable electrode, causing the dissolution of the metal bridge thereby turning the switch off. Once the metal deposit has been completely dissolved, the process self-terminates. This switching process features the following attributes. It requires very little to change states (i.e., on and off). Furthermore, no power is required to maintain the states; hence, the state of the switch is nonvolatile. Because of these attributes the integration of a rectenna to provide the necessary power and control is unique to this embodiment. A rectenna, or rectifying antenna, generates DC power from an incident RF signal. The low voltages and power required for the nanoionic switch control are easily generated from this system and provide the switch with a novel capability to be operated and powered from an external wireless device. In one realization, an RF signal of a specific frequency can be used to set the switch into an off state, while another frequency can be used to set the switch to an on state. The wireless, miniaturized, and nomoving- part features of this switch make it

Spectroscopic evidence for two-gap superconductivity in the quasi-1D chalcogenide Nb2Pd0.81S5

Science.gov (United States)

Park, Eunsung; Lee, Sangyun; Ronning, Filip; Thompson, Joe D.; Zhang, Qiu; Balicas, Luis; Lu, Xin; Park, Tuson

2018-04-01

Low-dimensional electronic systems with confined electronic wave functions have attracted interest due to their propensity toward novel quantum phases and their use in wide range of nanotechnologies. The newly discovered chalcogenide Nb2PdS5 possesses a quasi-one-dimensional electronic structure and becomes superconducting. Here, we report spectroscopic evidence for two-band superconductivity, where soft point-contact spectroscopic measurements in the superconducting (SC) state reveal Andreev reflection in the differential conductance G. Multiple peaks in G are observed at 1.8 K and explained by the two-band Blonder–Tinkham–Klapwijk model with two gaps Δ1  =  0.61 meV and Δ2  =  1.20 meV. The progressive evolution of G with temperature and magnetic field corroborates the multiple nature of the SC gaps.

Phase change cellular automata modeling of GeTe, GaSb and SnSe stacked chalcogenide films

Science.gov (United States)

Mihai, C.; Velea, A.

2018-06-01

Data storage needs are increasing at a rapid pace across all economic sectors, so the need for new memory technologies with adequate capabilities is also high. Phase change memories (PCMs) are a leading contender in the emerging race for non-volatile memories due to their fast operation speed, high scalability, good reliability and low power consumption. However, in order to meet the present and future storage demands, PCM technologies must further increase the storage density. Here, we employ a probabilistic cellular automata approach to explore the multi-step threshold switching from the reset (off) to the set (on) state in chalcogenide stacked structures. Simulations have shown that in order to obtain multi-step switching with high contrast among different resistance states, the stacked structure needs to contain materials with a large difference among their crystallization temperatures and careful tuning of strata thicknesses. The crystallization dynamics can be controlled through the external energy pulses applied to the system, in such a way that a balance between nucleation and growth in phase change behavior can be achieved, optimized for PCMs.

Size-controlled synthesis of chalcogen and chalcogenide nanoparticles using protic ionic liquids with imidazolium cation

International Nuclear Information System (INIS)

Meenatchi, Boominathan; Renuga, Velayutham; Manikandan, Ayyar

2016-01-01

Green synthesis of selenium (chalcogen) nanoparticles (SeNPs) has been successfully attained by simple wet chemical method that involves the reaction of six different protic ionic liquids with imidazolium cations and sodium hydrogen selenide (NaHSe) in the presence of poly ethylene glycol-600 (PEG-600) as an additional stabilizer. The obtained SeNPs were characterized using UV spectral (UV), Fourier transform infra-red (FT-IR), X-ray diffraction (XRD), thermogravimetric analysis (TGA), differential thermal analysis (DTA), scanning electron microscope (SEM) with energy dispersive X-ray (EDX) and high resolution transmission electron microscope (TEM) analysis. The results illustrate that the synthesized SeNPs are spherical in shape with size ranging 19-24 nm and possess good optical property with greater band gap energy, high thermal stability up to 330 .deg. C, low melting point of 218-220 .deg. C comparing to precursor selenium. Using the synthesized SeNPs, two chalcogenides such as ZnSe and CdSe semiconductor nanoparticles were synthesized and characterized using XRD, SEM with EDX and TEM analysis. The fabricated CdSe and ZnSe nanoparticles appeared like pebble and cluster structure with particle size of 29.97 nm and 22.73 nm respectively.

Size-controlled synthesis of chalcogen and chalcogenide nanoparticles using protic ionic liquids with imidazolium cation

Energy Technology Data Exchange (ETDEWEB)

Meenatchi, Boominathan [Cauvery College for Women, Tamilnadu (India); Renuga, Velayutham [National College, Tamilnadu (India); Manikandan, Ayyar [Bharath Institute of Higher Education and Research, Bharath University, Tamilnadu (India)

2016-03-15

Green synthesis of selenium (chalcogen) nanoparticles (SeNPs) has been successfully attained by simple wet chemical method that involves the reaction of six different protic ionic liquids with imidazolium cations and sodium hydrogen selenide (NaHSe) in the presence of poly ethylene glycol-600 (PEG-600) as an additional stabilizer. The obtained SeNPs were characterized using UV spectral (UV), Fourier transform infra-red (FT-IR), X-ray diffraction (XRD), thermogravimetric analysis (TGA), differential thermal analysis (DTA), scanning electron microscope (SEM) with energy dispersive X-ray (EDX) and high resolution transmission electron microscope (TEM) analysis. The results illustrate that the synthesized SeNPs are spherical in shape with size ranging 19-24 nm and possess good optical property with greater band gap energy, high thermal stability up to 330 .deg. C, low melting point of 218-220 .deg. C comparing to precursor selenium. Using the synthesized SeNPs, two chalcogenides such as ZnSe and CdSe semiconductor nanoparticles were synthesized and characterized using XRD, SEM with EDX and TEM analysis. The fabricated CdSe and ZnSe nanoparticles appeared like pebble and cluster structure with particle size of 29.97 nm and 22.73 nm respectively.

Strong 3D and 1D magnetism in hexagonal Fe-chalcogenides FeS and FeSe vs. weak magnetism in hexagonal FeTe.

Science.gov (United States)

Parker, David S

2017-06-13

We present a comparative theoretical study of the hexagonal forms of the Fe-chalcogenides FeS, FeSe and FeTe with their better known tetragonal forms. While the tetragonal forms exhibit only an incipient antiferromagnetism and experimentally show superconductivity when doped, the hexagonal forms of FeS and FeSe display a robust magnetism. We show that this strong magnetism arises from a van Hove singularity associated with the direct Fe-Fe c-axis chains in the generally more three-dimensional NiAs structure. We also find that hexagonal FeTe is much less magnetic than the other two hexagonal materials, so that unconventional magnetically-mediated superconductivity is possible, although a large T c value is unlikely.

Open-framework micro- and meso-structured chalcogenides and their ion exchange properties

Science.gov (United States)

Ding, Nan

2007-12-01

Micro- and meso- structured chalcogenides with open inorganic framework have driven tremendous attention and intense work during the last two decades. They belong to a special category of materials possessing multifunctional potential due to their large void space within the atomic skeletons and the novel physical properties brought by the chalcogen elements. The latter are not generally present in typical open-framework oxides. In addition, because of the different size and electronegativity of the chalcogen elements compared to oxygen, many new structural properties were expected to emerge when the work in this dissertation was undertaken. The major body of this work involves group 13 (e.g. Ga, In) or 14 (e.g. Ge, Sn) elements with chalcogen. Transition metals also are incorporated in a few examples. The first two groups of compounds reported belong to the latter case. Unique structure types have been obtained under hydrothermal conditions via the combination of M (M = Zn, Cd), Sn and Q (Q = S, Se) to build microporous A6M4Sn3Q13 (A = K, Rb) based on truncated penta-supertrahedral cluster [M4Sn4Q 17]10-. More surprisingly, the protonation of K 6Cd4Sn3Se13 led to another new compound K14Cd15Sn12Se46 which possesses a labyrinth-like void space within the compact [Cd15Sn12Se 46]14- anionic skeleton. This structural characteristic leads to an unusual stability of the compound in acid. Both the K6Cd 4Sn3Se13 and K14Cd15Sn 12Se46 are fast ion-exchangers and their K+ ions can be replaced by other alkali metal cations and even H+ for the latter. Other work reported was aimed at the heavier analogs of alumiophosphate, i.e. the open-frameworks based on group 13 (Ga, In), 15 (Sb) and chalcogen elements. Two groups of chalcoantimonates with two-dimensional architectures [M5Sb6S19]5- and polymorphic [M2Sb2Q7]2- (M = Ga, In; Q = S, Se) were obtained. With the help of bulky organic structure-directing agents, large windows were formed in some of these anionic slabs. The windows

The question about increasing of thermoelectrical Q and percent of the yield of the semiconductor material on the basis of chalcogenides of the bismuth and antimony under conditions of experimental-industrial production

International Nuclear Information System (INIS)

Magerramov, A.A.; Barkhalov, B.S.

2005-01-01

Full text : Different methods of the receiving of monocrystalline ingots of the semiconductor materials for thermo electrical inverter of energy have been considered. On the basis of the analyses of theoretical and experimental data generated series of recommendations, directed to increase thermo electrical Q receiving from thermo electrical materials and increasing percent of yield of semiconductor materials on the basis of chalcogenides of the bismuth and antimony on the basis of industrial production

Engineering of lead chalcogenide nanostructures for carrier multiplication: Core/shell, 1D, and 2D

Science.gov (United States)

Lin, Qianglu

Near infrared emitting semiconductors have been used widely in industry especially in solar-cell fabrications. The efficiency of single junction solar-cell can reach the Shockley-Queisser limit by using optimum band gap material such as silicon and cadmium telluride. The theoretical efficiency can be further enhanced through carrier multiplication, in which a high energy photon is absorbed and more than one electron-hole pair can be generated, reaching more than 100% quantum efficiency in the high energy region of sunlight. The realization of more than unity external quantum efficiency in lead selenide quantum dots solar cell has motivated vast investigation on lowering the carrier multiplication threshold and further improving the efficiency. This dissertation focuses on synthesis of lead chalcogenide nanostructures for their optical spectroscopy studies. PbSe/CdSe core/shell quantum dots were synthesized by cation exchange to obtain thick shells (up to 14 monolayers) for studies of visible and near infrared dual band emissions and carrier multiplication efficiency. By examining the reaction mechanism, a thermodynamic and a kinetic model are introduced to explain the vacancy driven cation exchange. As indicated by the effective mass model, PbSe/CdSe core/shell quantum dots has quasi-type-II band alignment, possessing electron delocalized through the entire quantum dot and hole localized in the core, which breaks down the symmetry of energy levels in the conduction and valence band, leading to hot-hole-assisted efficient multi-exciton generation and a lower carrier multiplication threshold to the theoretical value. For further investigation of carrier multiplication study, PbTe, possessing the highest efficiency among lead chalcogenides due to slow intraband cooling, is synthesized in one-dimensional and two-dimensional nanostructures. By using dodecanethiol as the surfactant, PbTe NRs can be prepared with high uniformity in width and resulted in fine quantum

Synthesis, Characterization, and Properties of the Two-Dimensional Chalcogenides: Monolayers, Alloys, and Heterostructures

Science.gov (United States)

Cain, Jeffrey D.

Inspired by the triumphs of graphene, and motivated by its limitations, the science and engineering community is rapidly exploring the landscape of other layered materials in their atomically-thin forms. Dominating this landscape are the layered chalcogenides; diverse in chemistry, crystal structure, and properties, there are well over 100 primary members of this material family. Driven by quantum confinement, single layers (or few, in some cases) of these materials exhibit electronic, optical, and mechanical properties that diverge dramatically from their bulk counterparts. While initially isolated in monolayer form via mechanical exfoliation, the field of two-dimensional (2D) materials is being forced evolve to more scalable and reliable methods. Focusing on the chalcogenides (e.g. MoS2, Bi 2Se3, etc.), this dissertation introduces and mechanistically examines multiple novel synthetic approaches for the direct growth of monolayers, heterostructures, and alloys with the desired quality, reproducibility and generality. The first methods described in this thesis are physical vapor transport (PVT) and evaporative thinning (ET): a facile, top-down synthesis approach for creating ultrathin specimens of layered materials down to the two-dimensional limit. Evaporative thinning, applied in this study to the fabrication of A2X3 (Bi2Se3 and Sb2Te3) monolayers, is based on the controlled evaporation of material from initially thick specimens until the 2D limit is reached. The resultant flakes are characterized with a suite of imaging and spectroscopic techniques and the mechanism of ET is investigated via in-situ heating within a transmission electron microscope. Additionally, the basic transport properties of the resultant flakes are probed. The growth of ultrathin GeSe flakes is explored using PVT and the material's basic structure, properties, and stability are addressed. Second, oxide precursor based chemical vapor deposition (CVD) is presented for the direct growth of

Fabrication and characterization of Ge20Sb15Se65 chalcogenide glass rib waveguides for telecommunication wavelengths

International Nuclear Information System (INIS)

Li, Jun; Shen, Xiang; Sun, Junqiang; Vu, Khu; Choi, Duk-Yong; Wang, Rongping; Luther-Davies, Barry; Dai, Shixun; Xu, Tiefeng; Nie, Qiuhua

2013-01-01

We report on the fabrication and optical properties of Ge 20 Sb 15 Se 65 chalcogenide glass rib waveguides on a single photonic chip. Radio-frequency magnetron sputtering method is employed to deposit 1.36-μm-thick films and reactive ion etching with CHF 3 is used to pattern 0.76-μm-deep rib waveguides of 1–4 μm wide with low surface roughness and vertical sidewalls. Using lensed fibers, the insertion losses for rib waveguides of different widths are measured and propagation losses are estimated to be lower than 1 dB/cm. Finite difference method simulations and refractive index/curve fitting are used to observe a moderate normal dispersion of the waveguides at 1550 nm. - Highlights: • RF magnetron sputtering was used to deposit uniform Ge 20 Sb 15 Se 65 thin films. • CHF 3 reactive ion etching of rib waveguides vertical profile and smooth sidewall. • Insertion losses at 1550 nm measured and low propagation losses estimated. • Dispersion engineered by finite difference methods and refractive curve fitting

ac conductivity and dielectric properties of amorphous Se80Te20-xGex chalcogenide glass film compositions

International Nuclear Information System (INIS)

Hegab, N.A.; Afifi, M.A.; Atyia, H.E.; Farid, A.S.

2009-01-01

Thin films of the prepared Se 80 Te 20-x Ge x (x = 5, 7 and 10 at.%) were prepared by thermal evaporation technique. X-ray diffraction patterns showed that the films were in amorphous state. The ac conductivity and dielectric properties of the investigated film compositions were studied in the frequency range 0.1-100 kHz and in temperature range (303-373 K). The experimental results indicated that the ac conductivity and the dielectric properties depended on the temperature and frequency. The ac conductivity is found to obey the ω s law, in accordance with the hopping model, s is found to be temperature dependent (s 1 and dielectric loss ε 2 were found to decrease with frequency and increase with temperature. The maximum barrier height W m , calculated from dielectric measurements according to Guintini equation, agrees with that proposed by the theory of hopping over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states was estimated for the studied film compositions. The variation of the studied properties with Ge content was also investigated.

Solution-based synthesis and design of late transition metal chalcogenide materials for oxygen reduction reaction (ORR).

Science.gov (United States)

Gao, Min-Rui; Jiang, Jun; Yu, Shu-Hong

2012-01-09

Late transition metal chalcogenide (LTMC) nanomaterials have been introduced as a promising Pt-free oxygen reduction reaction (ORR) electrocatalysts because of their low cost, good ORR activity, high methanol tolerance, and facile synthesis. Herein, an overview on the design and synthesis of LTMC nanomaterials by solution-based strategies is presented along with their ORR performances. Current solution-based synthetic approaches towards LTMC nanomaterials include a hydrothermal/solvothermal approach, single-source precursor approach, hot-injection approach, template-directed soft synthesis, and Kirkendall-effect-induced soft synthesis. Although the ORR activity and stability of LTMC nanomaterials are still far from what is needed for practical fuel-cell applications, much enhanced electrocatalytic performance can be expected. Recent advances have emphasized that decorating the surface of the LTMC nanostructures with other functional nanoparticles can lead to much better ORR catalytic activity. It is believed that new synthesis approaches to LTMCs, modification techniques of LTMCs, and LTMCs with desirable morphology, size, composition, and structures are expected to be developed in the future to satisfy the requirements of commercial fuel cells. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Strong 3D and 1D magnetism in hexagonal Fe-chalcogenides FeS and FeSe vs. weak magnetism in hexagonal FeTe

Energy Technology Data Exchange (ETDEWEB)

Parker, David S. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-06-13

We present a comparative theoretical study of the hexagonal forms of the Fe-chalcogenides FeS, FeSe and FeTe with their better known tetragonal forms. While the tetragonal forms exhibit only an incipient antiferromagnetism and experimentally show superconductivity when doped, the hexagonal forms of FeS and FeSe display a robust magnetism. We show that this strong magnetism arises from a van Hove singularity associated with the direct Fe-Fe c-axis chains in the generally more three-dimensional NiAs structure. We also find that hexagonal FeTe is much less magnetic than the other two hexagonal materials, so that unconventional magnetically-mediated superconductivity is possible, although a large T_c value is unlikely.

Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides); Synthese assistee par faisceau d'ions d'agregats dans les verres (argent et chalcogenures de plomb)

Energy Technology Data Exchange (ETDEWEB)

Espiau de Lamaestre, R

2005-04-15

This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

Impact of sulfur content on structural and optical properties of Ge20Se80-xSx chalcogenide glasses thin films

Science.gov (United States)

Dongol, M.; Elhady, A. F.; Ebied, M. S.; Abuelwafa, A. A.

2018-04-01

Chalcogenide system Ge20Se80-xSx (x = 0, 15 and 30%) thin films were prepared by thermal evaporation technique. The amorphous state of the samples was confirmed according to XRD. The structural changes occurring upon replacement Se by S was investigated using Raman spectroscopy. The optical properties of the as-deposited Ge20Se80-xSx thin films have been studied by analysis the transmittance T(λ) measured at room temperature in the wavelength range 200-2500 nm using Swanepoel's method. Urbach energy (Ee) and optical band gap (Eg) were strongly affected by sulfur concentration in the sample. The refractive index evaluated through envelope method was extrapolated by Cauchy dispersion relationship over the whole spectral range. Moreover, the dispersion of refractive index was analyzed in terms of the single-oscillator Wemple-Di Domenico model. The third-order nonlinear susceptibility (χ(3)) and nonlinear refractive index (n2) were calculated and discussed for different Ge20Se80-xSx (x = 0, 15 and 30%).

Phase change and optical band gap behavior of Se0.8S0.2 chalcogenide glass films

International Nuclear Information System (INIS)

Abdel Rafea, M.; Farid, Huda

2009-01-01

Se 0.8 S 0.2 chalcogenide glass films have been prepared by thermal vacuum evaporation technique with thickness 583 nm. Annealing process at T ≥ 333 K crystallizes the films and nanostructured films are formed. The crystallite size was increased to 24 nm as the annealing temperature increased to 373 K. Orthorhombic crystalline system was identified for the annealed films. SEM micrographs show that films consist of two parallel surfaces and the thickness was determined by cross section imaging. The optical transmittance is characterized by interference patterns as a result of these two parallel surfaces, besides their average value at longer wavelength decreases as a result of annealing process. The band gap, E g is red shifted due to crystallization by annealing. As the phase of the films changes from amorphous to crystalline in the annealing temperature range 333-363 K, a non sharp change of the band gap (E g ) is observed. This change was explained by Brus's model of the energy gap confinement behavior of the nanostructured films. The optical refractive index increases suddenly when the system starts to be crystallized by annealing

A new method to study complex materials in solid state chemistry: application to chalcogenide materials

International Nuclear Information System (INIS)

Lippens, P.E.; Olivier-Fourcade, J.; Jumas, J.C.

1998-01-01

We show that a combined application of Moessbauer spectroscopy and other experimental tools such as X-ray photoelectron spectroscopy, X-ray absorption spectroscopy and nuclear magnetic resonance provides a coherent picture of the local electronic structure in chalcogenide materials. In order to develop this idea we propose an analysis of the Sn, Sb and Te local electronic structures for three different systems of materials. The first example concerns the In-Sn-S system. We show that Li insertion in In 16 Sn 4 S 32 leads to changes of the Sn oxidation states from Sn(IV) to Sn(II). The second example concerns materials of the Tl-Sb-S system. We show that variations of the 121 Sb Moessbauer isomer shift and surface of the first peak of the X-ray absorption spectra at the Sb L III edge can be linearly correlated because of the main influence of the Sb 5s electrons. This is explained by changes in the local environment of the Sb atoms. The last example concerns the crystalline phases of the Tl-Sn-Te system. The formal oxidation numbers of the Te atoms are determined from 125 Te Moessbauer spectroscopy and X-ray photoelectron spectroscopy. They are related to the different types of bonds involving the Te atoms in the Tl-Sn-Te compounds

Neutron diffraction study of structural transformations in ternary systems of HgSe sub 1 sub - sub x S sub x mercury chalcogenides at high pressure

CERN Document Server

Voronin, V I; Berger, I F; Glazkov, V P; Kozlenko, D P; Savenko, B N; Tikhomirov, S V

2001-01-01

The structure of the ternary systems of the HgSe sub 1 sub - sub x S sub x mercury chalcogenides is studied at high pressures up to 35 kbar. It is established that by increase in the pressure in the HgSe sub 1 sub - sub x S sub x there takes place the transition from the sphalerite type cubic structure to the cinnabar type hexagonal structure, which is accompanied by the jump-like change in the elementary cell volume and interatomic distances. The parameters of the elementary cell and positional parameters of the Hg and Se/S for the hexagonal phase of high pressure are determined. The existence of the two-phase state in the area of the phase transformation is determined

Role of heat treatment on structural and optical properties of thermally evaporated Ga{sub 10}Se{sub 81}Pb{sub 9} chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

El-Sebaii, A.A., E-mail: ahmedelsebaii@yahoo.com [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia); Khan, Shamshad A. [Department of Physics, St. Andrews College, Gorakhpur 273001 (India); Al-Marzouki, F.M.; Faidah, A.S.; Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, 80203 Jeddah 21589 (Saudi Arabia)

2012-08-15

Amorphous chalcogenides, based on Se, have become materials of commercial importance and were widely used for optical storage media. The present work deals with the structural and optical properties of Ga{sub 10}Se{sub 81}Pb{sub 9} ternary chalcogenide glass prepared by melt quenching technique. The glass transition, crystallization and melting temperatures of the synthesized glass were measured by non-isothermal DSC measurements at a constant heating rate of 30 K/min. Thin films of thickness 4000 A were prepared by thermal evaporation techniques on glass/Si (1 0 0) wafer substrate. These thin films were thermally annealed for two hours at three different annealing temperatures of 345, 360 and 375 K, which were in between the glass transition and crystallization temperatures of the Ga{sub 10}Se{sub 81}Pb{sub 9} glass. The structural, morphological and optical properties of as-prepared and annealed thin films were studied. Analysis of the optical absorption data showed that the rules of the non-direct transitions predominate. It was also found that the optical band gap decreases while the absorption coefficient, refractive index and extinction coefficient increase with increasing the annealing temperature. Due to the higher values of absorption coefficient and annealing dependence of the optical band gap and optical constants, the investigated material could be used for optical storage. - Highlights: Black-Right-Pointing-Pointer Annealing effect on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by x-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Thermal annealing causes a decrease in optical band gap in Ga{sub 10}Se{sub 81}Pb{sub 9} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non

Enhanced hydrogen production from water via a photo-catalyzed reaction using chalcogenide d-element nanoparticles induced by UV light.

Science.gov (United States)

El Naggar, Ahmed M A; Nassar, Ibrahim M; Gobara, Heba M

2013-10-21

Hydrogen has the potential to meet the requirements as a clean non-fossil fuel in the future. The photocatalytic production of H2 through water splitting has been demonstrated and enormous efforts have been published. The present work is an attempt to enhance the production of H2 during water splitting using synthesized nanoparticles based on chalcogenide d-element semiconductors via a photochemical reaction under UV-light in the presence of methanol as a hole-scavenger. In general, the enhanced activity of a semiconductor is most likely due to the effective charge separation of photo generated electrons and holes in the semiconductors. Hence, the utilization of different semiconductors in combination can consequently provide better hydrogen production. Accordingly in this research work, two different semiconductors, with different concentrations, either used individually or combined together were introduced. They in turn produced a high concentration of H2 as detected and measured using gas chromatography. Herein, data revealed that the nano-structured semiconductors prepared through this work are a promising candidate in the production of an enhanced H2 flux under visible UV radiation.

Synchronous γ (Co60) photons and thermal processing induced insulator metal transition in amorphous chalcogenide As4Se3Te3 composition

Science.gov (United States)

El-Sayed, S. A.; Morsy, M. A.

2018-05-01

Amorphous chalcogenide composition AS4Se3Te3 is prepared by conventional quenching technique. The separate annealing or γ quanta irradiation not effect on the dc conductivity properties of the prepared composition. When the prepared samples are subjected to simultaneous annealing at temperature 413 K and γ quanta irradiation the dc conductivity increases. The dark dc conductivity increases by increasing the time of exposure to γ irradiation. At irradiation dose 1.47 × 104 Gy the dc conductivity starts to have metallic like conductivity character. These samples could be used as high temperature γ quanta dosimeter. By applying scaling theory on the samples irradiated with different dose of γ irradiation the critical exponents are determined and found to be temperature tends to zero. The steric value is low in the insulator side of conductivity, but high and almost saturated in the metallic side of conductivity.

Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

Directory of Open Access Journals (Sweden)

A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep

2007-01-01

Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

Quaternary chalcogenides La{sub 3}Sn{sub 0.5}InS{sub 7} and La{sub 3}Sn{sub 0.5}InSe{sub 7}

Energy Technology Data Exchange (ETDEWEB)

Iyer, Abishek K.; Lee, Emma J.; Bernard, Guy M.; Michaelis, Vladimir K.; Mar, Arthur [Department of Chemistry, University of Alberta, Edmonton, AB (Canada); Yin, Wenlong [Department of Chemistry, University of Alberta, Edmonton, AB (Canada); Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang (China)

2017-12-13

The quaternary chalcogenides La{sub 3}Sn{sub 0.5}InS{sub 7} and La{sub 3}Sn{sub 0.5}InSe{sub 7} were prepared by reactions of the elements at 1050 C and 950 C, respectively. They adopt noncentrosymmetric structures [hexagonal, space group P6{sub 3}, Z = 2; a = 10.2993(11) Aa, c = 6.0921(6) Aa for La{sub 3}Sn{sub 0.5}InS{sub 7}; a = 10.6533(7) Aa, c = 6.4245(4) Aa for La{sub 3}Sn{sub 0.5}InSe{sub 7}] in which the half-occupancy of Sn atoms within octahedral sites classifies them as belonging to the La{sub 3}Mn{sub 0.5}SiS{sub 7}-type branch of the large family of quaternary rare-earth chalcogenides RE{sub 3}M{sub 1-x}M{sup '}Ch{sub 7}. The site distribution in La{sub 3}Sn{sub 0.5}InCh{sub 7}, with higher-valent Sn atoms occupying octahedral instead of tetrahedral sites, is reversed from the typical situation observed in other RE{sub 3}M{sub 1-x}M{sup '}Ch{sub 7} compounds. The ordered distribution of Sn atoms in octahedral sites and In atoms in tetrahedral sites was evaluated by bond valence sum analyses. Moreover, {sup 119}Sn solid-state nuclear magnetic resonance (NMR) spectroscopy confirms the occupation of Sn{sup 4+} species exclusively within octahedral sites. An optical bandgap of 1.45 eV was found for La{sub 3}Sn{sub 0.5}InS{sub 7}. Band structure calculations on an ordered superstructure model of La{sub 3}Sn{sub 0.5}InS{sub 7} reveal that avoidance of strongly Sn-S antibonding levels is an important driving force for the Sn deficiency. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Low-loss, robust fusion splicing of silica to chalcogenide fiber for integrated mid-infrared laser technology development.

Science.gov (United States)

Thapa, Rajesh; Gattass, Rafael R; Nguyen, Vinh; Chin, Geoff; Gibson, Dan; Kim, Woohong; Shaw, L Brandon; Sanghera, Jasbinder S

2015-11-01

We demonstrate a low-loss, repeatable, and robust splice between single-mode silica fiber and single-mode chalcogenide (CHG) fiber. These splices are particularly difficult to create because of the significant difference in the two fibers' glass transition temperatures (∼1000°C) as well as the large difference in the coefficients of thermal expansion between the fibers (∼20×10(-6)/°C). With 90% light coupled through the silica-CHG fiber splice, predominantly in the fundamental circular-symmetric mode, into the core of the CHG fiber and with 0.5 dB of splice loss measured around the wavelength of 2.5 μm, after correcting only for the Fresnel loss, the silica-CHG splice offers excellent beam quality and coupling efficiency. The tensile strength of the splice is greater than 12 kpsi, and the laser damage threshold is greater than 2 W (CW) and was limited by the available laser pump power. We also utilized this splicing technique to demonstrate 2 to 4.5 μm ultrabroadband supercontinuum generation in a monolithic all-fiber system comprising a CHG fiber and a high peak power 2 μm pulsed Raman-shifted thulium fiber laser. This is a major development toward compact form factor commercial applications of soft-glass mid-IR fibers.

Thermoelectric properties of chalcogenide based Cu2+xZnSn1−xSe4

Directory of Open Access Journals (Sweden)

Ch. Raju

2013-03-01

Full Text Available Quaternary chalcogenide compounds Cu2+xZnSn1−xSe4 (0 ≤ x ≤ 0.15 were prepared by solid state synthesis. Rietveld powder X-ray diffraction (XRD refinements combined with Electron Probe Micro Analyses (EPMA, WDS-Wavelength Dispersive Spectroscopy and Raman spectra of all samples confirmed the stannite structure (Cu2FeSnS4-type as the main phase. In addition to the main phase, small amounts of secondary phases like ZnSe, CuSe and SnSe were observed. Transport properties of all samples were measured as a function of temperature in the range from 300 K to 720 K. The electrical resistivity of all samples decreases with an increase in Cu content except for Cu2.1ZnSn0.9Se4, most likely due to a higher content of the ZnSe. All samples showed positive Seebeck coefficients indicating that holes are the majority charge carriers. The thermal conductivity of doped samples was high compared to Cu2ZnSnSe4 and this may be due to the larger electronic contribution and the presence of the ZnSe phase in the doped samples. The maximum zT = 0.3 at 720 K occurs for Cu2.05ZnSn0.95Se4 for which a high-pressure torsion treatment resulted in an enhancement of zT by 30% at 625 K.

Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films

Science.gov (United States)

Hassanien, A. S.; Akl, Alaa A.

2016-01-01

Compositional dependence of optical and electrical properties of chalcogenide CdSxSe1-x (0.4 ≥ x ≥ 0.0 at. %) thin films was studied. Cadmium sulphoselenide films were deposited by thermal evaporation technique at vacuum (8.2 × 10-4 Pa) onto preheated glass substrates (523 K). The evaporation rate and film thickness were kept constant at 2.50 nm/s and 375 ± 5 nm, respectively. X-ray diffractograms showed that, the deposited films have the low crystalline nature. Energy dispersive analysis by X-ray (EDAX) was used to check the compositional elements of deposited films. The absorption coefficient was determined from transmission and reflection measurements at room temperature in the wavelength range 300-2500 nm. Optical density, skin depth, optical energy gap and Urbach's parameters of CdSSe thin films have also been estimated. The direct optical energy gap decreased from 2.248 eV to 1.749 eV when the ratio of Se-content was increased from 0.60 to 1.00 . Conduction band and valance band positions were evaluated. The temperature dependence of dc-electrical resistivity in the temperature range (293-450 K) has been reported. Three conduction regions due to different conduction mechanisms were detected. Electrical sheet resistance, activation energy and pre-exponential parameters were discussed. The estimated values of optical and electrical parameters were strongly dependent upon the Se-content in CdSSe matrix.

New Intermetallic Ternary Phosphide Chalcogenide AP2-xXx (A = Zr, Hf; X = S, Se) Superconductors with PbFCl-Type Crystal Structure

Science.gov (United States)

Kitô, Hijiri; Yanagi, Yousuke; Ishida, Shigeyuki; Oka, Kunihiko; Gotoh, Yoshito; Fujihisa, Hiroshi; Yoshida, Yoshiyuki; Iyo, Akira; Eisaki, Hiroshi

2014-07-01

We have synthesized a series of intermetallic ternary phosphide chalcogenide superconductors, AP2-xXx (A = Zr, Hf; X = S, Se), using the high-pressure synthesis technique. These materials have a PbFCl-type crystal structure (space group P4/nmm) when x is greater than 0.3. The superconducting transition temperature Tc changes systematically with x, yielding dome-like phase diagrams. The maximum Tc is achieved at approximately x = 0.7, at which point the Tc is 6.3 K for ZrP2-xSex (x = 0.75), 5.5 K for HfP2-xSex (x = 0.7), 5.0 K for ZrP2-xSx (x = 0.675), and 4.6 K for Hfp2-xSx (x = 0.5). They are typical type-II superconductors and the upper and lower critical fields are estimated to be 2.92 T at 0 K and 0.021 T at 2 K for ZrP2-xSex (x = 0.75), respectively.

Synthesis and Characterization of Novel Transition Metal Chalcogenide Phases for Energy Storage, Energy Conversion and Optoelectronics

Science.gov (United States)

Chen, Erica Maxine

Today's energy needs are primarily provided by fossil fuels, which are harvested from the earth. Consuming fossil fuels to provide energy for civilization releases products into the atmosphere that contribute to climate change. Ongoing efforts to combat the existential crisis which climate change presents many of the emerging and commercialized technologies for solar, thermoelectric and battery applications involve transition metal chalcogenides. Some of the materials used for these applications are expensive and rare, such as gallium, vanadium and indium, or have no merits towards environmental stewardship, such as cadmium and lead. Thus, the purpose of this work is to further the ongoing effort to discover and develop new materials which are able to meet or exceed benchmarks for their application. This work focuses on the development of various metal chalcogenide material systems featuring d-block transition metals selected for their contribution to alter structure and properties. Various thermal, electronic and optical properties can be changed through substitution or doping with additional elements to affect to the base composition or as part of a gradient composition series. After an extensive description of experimental methods which describe the associated materials synthesis, processing and characterization techniques in chapter 2, chapter 3 explores the Cu4-xLixS 2 phases for their contribution as further evidence in the formation of lithiated copper sulfide phases as part of the intercalation reaction before being converted to the binaries copper and lithium sulfide. Chapter 4 documents the development of Cu4TiSe4, a novel material with potential for thin-film photovoltaic technologies with its band gap in the range where the solar spectrum is the most bountiful (Eg,indirect = 1.16 eV, Eg,direct = 1.34 eV), an outstanding optical absorbance ( > 10-4 cm-1) outperforming commercially successful materials in the solar spectrum, and suitable for thin

A Novel Effect of CO2 Laser Induced Piezoelectricity in Ag2Ga2SiS6 Chalcogenide Crystals

Directory of Open Access Journals (Sweden)

Oleg V. Parasyuk

2016-08-01

Full Text Available We have discovered a substantial enhancement of the piezoelectric coefficients (from 10 to 78 pm/V in the chalcogenide Ag2Ga2SiS6 single crystals. The piezoelectric studies were done under the influence of a CO2 laser (wavelength 10.6 μm, time duration 200 ns, lasers with power densities varying up to 700 MW/cm2. Contrary to the earlier studies where the photoinduced piezoelectricity was done under the influence of the near IR lasers, the effect is higher by at least one order, which is a consequence of the phonon anharmonic contributions and photopolarizations. Such a discovery allows one to build infrared piezotronic devices, which may be used for the production of the IR laser tunable optoelectronic triggers and memories. This is additionally confirmed by the fact that analogous photoillumination by the near IR laser (Nd:YAG (1064 nm and Er:glass laser (1540 nm gives the obtained values of the effective piezoelectricity at of least one order less. The effect is completely reversible with a relaxation time up to several milliseconds. In order to clarify the role of free carriers, additional studies of photoelectrical spectra were done.

Electrochemical lithium and sodium intercalation into the tantalum-rich layered chalcogenides Ta2Se and Ta2Te3

International Nuclear Information System (INIS)

Lavela, P.; Tirado, J.L.

1999-01-01

Two-layered tantalum chalcogenides are evaluated as alkali metal intercalation hosts in lithium and sodium electrochemical cells. The metal-rich pseudo-two-dimensional solid Ta 2 Se shows a poor intercalation behaviour. Lithium reacts with the selenide by deintercalating selenium from the blocks of Ta-related b.c.c. structure leading to a collapse of the structure and the formation of tantalum metal. Sodium is reversibly intercalated to a limited extent leading to complex structural changes in the selenide, as revealed by electron diffraction. The two-dimensional telluride Ta 2 Te 3 allows a topotactic intercalation of lithium below 1 F/mol, while a more extended reaction leads to sample amorphization. The better intercalation behaviour of this solid can be related with the one-atom thick metal layer and the van der Waals gap separating tellurium atoms of successive layers. Sodium can be reversibly intercalated into Ta 2 Te 3 in sodium cells which show a good cycling behaviour. Exposure of the intercalated solid to water vapour allows the preparation of hydrated products with a monolayer or a bilayer of water molecules solvating sodium in the interlayer space. (orig.)

Optical properties change in laser-induced Te/As{sub 2}Se{sub 3} chalcogenide thin films

Energy Technology Data Exchange (ETDEWEB)

Behera, Mukta; Naik, Ramakanta [Utkal University, Department of Physics, Bhubaneswar (India)

2016-10-15

In the present work, we report the change in optical parameters due to the deposition and photo-induced diffusion of Te layer into the chalcogenide As{sub 2}Se{sub 3} film. The photo-diffusion creates a solid solution of As-Se-Te which has potential application in optical devices. The Te/As{sub 2}Se{sub 3} bilayer films prepared by thermal evaporation technique were studied by various experimental techniques. The photo-diffusion of Te into As{sub 2}Se{sub 3} matrix was done by 532-nm laser irradiation. The structure of the As{sub 2}Se{sub 3}, as-prepared and irradiated Te/As{sub 2}Se{sub 3} films was studied by X-ray diffraction which were amorphous in nature. The presence of all the elements was checked by energy-dispersive X-ray analysis, and the optical transmission spectra were recorded by Fourier transform infrared spectrometer. The optical band gap is reduced by the deposition and diffusion of Te into As{sub 2}Se{sub 3} film which is due to the increase in density of defect states in the gap region. The transmission is decreased, whereas the absorption efficiency is increased with the increase in disorderness. The X-ray photoelectron spectroscopy carried out on these films gives information about the bonding change due to the photo-diffusion process. Therefore, this is an important result which will open up new directions for the application of this material in semiconducting devices. (orig.)

Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors

Energy Technology Data Exchange (ETDEWEB)

Sherchenkov, A. A. [National Research University of Electronic Technology (Russian Federation); Kozyukhin, S. A., E-mail: sergkoz@igic.ras.ru [Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation); Lazarenko, P. I.; Babich, A. V. [National Research University of Electronic Technology (Russian Federation); Bogoslovskiy, N. A. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Sagunova, I. V.; Redichev, E. N. [National Research University of Electronic Technology (Russian Federation)

2017-02-15

The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb{sub 2}Te{sub 3} chalcogenide semiconductors Ge{sub 2}Sb{sub 2}Te{sub 5}, GeSb{sub 2}Te{sub 5}, and GeSb{sub 4}Te{sub 7} are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb{sub 2}Te{sub 3}, which is important for targeted optimization of the phase change memory technology.

Fast sono assisted ferrofluid mediated silver super - Adsorption over magnesium ferrite-copper sulfide chalcogenide with the aid of multivariate optimization.

Science.gov (United States)

Rezaei, Ali Asghar; Hossein Beyki, Mostafa; Shemirani, Farzaneh

2017-07-01

This research focuses on the development of a fast ultrasonic assisted ferrofluid mediated methodology to obtain the optimum conditions for silver adsorption from aqueous solutions. For this purpose magnesium ferrite-copper sulfide chalcogenide was synthesized and employed as an efficient nanosorbent. The sorbent was characterized with energy-dispersive X-ray spectroscopy (EDX), field emission scanning electron microscopy (FE-SEM), X-ray powder diffraction (XRD) and vibrational sample magnetometry (VSM) techniques. For obtaining the optimal operating conditions of silver adsorption, response surface methodology (RSM) was used. Tests were performed by Box-Behnken design (BBD). The value of optimum conditions for silver adsorption include pH=2.5, adsorbent dosage=10.0mg, sonicating time=1min and ionic strength=2.2%. According optimum conditions, percentage of removal should be 99.34%. With replication of similar experiment (n=6) average percentage of 100±0.95% was obtained for Ag + adsorption which shows good agreement between predicted and experimental results. Silver ion adsorption follow Langmuir model with maximum sorption capacity of 2113mgg -1 . Ultrasonic power helped to prepare ferrofluid and demonstrated that had an important role in better dispersing of it in solution and efficient adsorption of analyte. Copyright © 2017 Elsevier B.V. All rights reserved.

External temperature and pressure effects on thermodynamic properties and mechanical stability of yttrium chalcogenides YX (X=S, Se and Te)

Energy Technology Data Exchange (ETDEWEB)

Seddik, T. [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 Mascara (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 Mascara (Algeria); Bouhemadou, A.; Guechi, N. [Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University of Setif, 19000 Setif (Algeria); Sayede, A. [Université Lille Nord de France, F-59000 Lille (France); Université-Artois, UCCS, F-62300 Lens (France); CNRS, UMR 8181, F-59650 Villeneuve d’Ascq (France); Varshney, D. [Materials Science Laboratory, School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, Madhya Pradesh (India); Al-Douri, Y. [Institute of Nono Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Reshak, A.H. [Institute of Complex Systems, FFPW, CENAKVA, University of South Bohemia in CB, Nove Hrady 37333 (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Bin-Omran, S. [Department of Physics and Astronomy, Faculty of Science, King Saud University, PO Box 2455, Riyadh 11451 (Saudi Arabia)

2013-11-01

The full potential linearized augmented plane wave method within the framework of density functional theory is employed to investigate the structural, thermodynamic and elastic properties of the yttrium chalcogenides (YX: X=S, Se, and Te) in their low-pressure phase (Fm3{sup ¯}m) and high-pressure phase (Pm3{sup ¯}m). The exchange-correlation potential is treated with the generalized gradient approximation of Perdew–Burke–Ernzerhof (GGA-PBE). Temperature dependence of the volume and both adiabatic and isothermal bulk moduli is predicted for a temperature range from 0to1200K for the both phases of the herein considered materials. Furthermore, we have analyzed the thermodynamic properties such as the heat capacities, C{sub V} and C{sub P}, thermal expansion, α, and Debye temperature, Θ{sub D,} under variable pressure and temperature. We have calculated the isothermal elastic constants C{sub ij}{sup T} of the YX monochalcogenides in both NaCl-B1 and CsCl-B2 phases at zero pressure and a temperature range 0−1200K. The results show that rare earth yttrium monochalcogenides are mechanically stable at high temperature. The elastic anisotropy of all studied materials in the two phases has been studied using three different methods.

All-optical tuning of EIT-like dielectric metasurfaces by means of chalcogenide phase change materials.

Science.gov (United States)

Petronijevic, E; Sibilia, C

2016-12-26

Electromagnetically induced transparency (EIT) is a pump-induced narrowband transparency window within an absorption line of the probe beam spectrum in an atomic system. In this paper we propose a way to bring together the all-dielectric metamaterials to have EIT-like effects and to optically tune the response by hybridizing them with a layer of a phase change material. We propose a design of the metamaterial based on Si nanoresonators that can support an EIT-like resonant response. On the top of the resonators we consider a thin layer of a chalcogenide phase change material, which we will use to tune the optical response. Our choice is Ge2Sb2Te5 (GST), since it has two stable phases at room temperature, namely amorphous and crystalline, between which it can be switched quickly, nonvolatively and reversibly, sustaining a large number of switching cycles. They differ in optical properties, while still having moderately low losses in telecom range. Since such dielectric resonators do not have non-radiative losses of metals around 1550nm, they can lead to a high-Q factor of the EIT-like response in this range. Firstly, we optimize the starting structure so that it gives an EIT-like response at 1550 nm when the GST layer is in the amorphous state. Our starting design uses glass as a substrate, but we also consider implementation in SOI technology. If we then switch the thin layer of GST to its crystalline phase, which has higher losses, the EIT-like response is red shifted, providing around 10:1 contrast at 1550nm. This reversible tuning can be done with an ns visible pulsed laser. We discuss the results of the simulation of the dielectric metasurface for different configurations and the tuning possibility.

Optimization of Phase Change Memory with Thin Metal Inserted Layer on Material Properties

Science.gov (United States)

Harnsoongnoen, Sanchai; Sa-Ngiamsak, Chiranut; Siritaratiwat, Apirat

This works reports, for the first time, the thorough study and optimisation of Phase Change Memory (PCM) structure with thin metal inserted chalcogenide via electrical resistivity (ρ) using finite element modeling. PCM is one of the best candidates for next generation non-volatile memory. It has received much attention recently due to its fast write speed, non-destructive readout, superb scalability, and great compatibility with current silicon-based mass fabrication. The setback of PCM is a high reset current typically higher than 1mA based on 180nm lithography. To reduce the reset current and to solve the over-programming failure, PCM with thin metal inserted chalcogenide (bottom chalcogenide/metal inserted/top chalcogenide) structure has been proposed. Nevertheless, reports on optimisation of the electrical resistivity using the finite element method for this new PCM structure have never been published. This work aims to minimize the reset current of this PCM structure by optimizing the level of the electrical resistivity of the PCM profile using the finite element approach. This work clearly shows that PCM characteristics are strongly affected by the electrical resistivity. The 2-D simulation results reveal clearly that the best thermal transfer of and self-joule-heating at the bottom chalcogenide layer can be achieved under conditions; ρ_bottom chalcogenide > ρ_metal inserted > ρ_top chalcogenide More specifically, the optimized electrical resistivity of PCMTMI is attained with ρ_top chalcogenide: ρ_metal inserted: ρ_bottom chalcogenide ratio of 1:6:16 when ρ_top chalcogenide is 10-3 Ωm. In conclusion, high energy efficiency can be obtained with the reset current as low as 0.3mA and with high speed operation of less than 30ns.

Microorganism mediated biosynthesis of metal chalcogenides; a powerful tool to transform toxic effluents into functional nanomaterials

Energy Technology Data Exchange (ETDEWEB)

Vena, M. Paula; Jobbágy, Matías; Bilmes, Sara A., E-mail: sarabil@qi.fcen.uba.ar

2016-09-15

Cadmium contained in soil and water can be taken up by certain crops and aquatic organisms and accumulate in the food-chain, thus removal of Cd from mining or industrial effluents – i.e. Ni-Cd batteries, electroplating, pigments, fertilizers – becomes mandatory for human health. In parallel, there is an increased interest in the production of luminescent Q-dots for applications in bioimaging, sensors and electronic devices, even the present synthesis methods are economic and environmentally costly. An alternative green pathway for producing Metal chalcogenides (MC: CdS, CdSe, CdTe) nanocrystals is based on the metabolic activity of living organisms. Intracellular and extracellular biosynthesis of can be achieved within a biomimetic approach feeding living organisms with Cd precursors providing new routes for combining bioremediation with green routes for producing MC nanoparticles. In this mini-review we present the state-of-the-art of biosynthesis of MC nanoparticles with a critical discussion of parameters involved and protocols. Few existing examples of scaling-up are also discussed. A modular reactor based on microorganisms entrapped in biocompatible mineral matrices – already proven for bioremediation of dissolved dyes – is proposed for combining both Cd-depletion and MC nanoparticle's production. - Highlights: • Removal of heavy metals by living matter is feasible trough biosorption and bioaccumulation • Algae, fungi, bacteria and yeasts can synthesize CdS, CdSe and CdTe Q-dots • Encapsulation of microorganisms in mineral gels provides building blocks for reactor design. • Depletion of Cd with production of Q-dots can be achieved with modular bioreactors with entrapped cells.

Role of boundary layer diffusion in vapor deposition growth of chalcogenide nanosheets: the case of GeS.

Science.gov (United States)

Li, Chun; Huang, Liang; Snigdha, Gayatri Pongur; Yu, Yifei; Cao, Linyou

2012-10-23

We report a synthesis of single-crystalline two-dimensional GeS nanosheets using vapor deposition processes and show that the growth behavior of the nanosheet is substantially different from those of other nanomaterials and thin films grown by vapor depositions. The nanosheet growth is subject to strong influences of the diffusion of source materials through the boundary layer of gas flows. This boundary layer diffusion is found to be the rate-determining step of the growth under typical experimental conditions, evidenced by a substantial dependence of the nanosheet's size on diffusion fluxes. We also find that high-quality GeS nanosheets can grow only in the diffusion-limited regime, as the crystalline quality substantially deteriorates when the rate-determining step is changed away from the boundary layer diffusion. We establish a simple model to analyze the diffusion dynamics in experiments. Our analysis uncovers an intuitive correlation of diffusion flux with the partial pressure of source materials, the flow rate of carrier gas, and the total pressure in the synthetic setup. The observed significant role of boundary layer diffusions in the growth is unique for nanosheets. It may be correlated with the high growth rate of GeS nanosheets, ~3-5 μm/min, which is 1 order of magnitude higher than other nanomaterials (such as nanowires) and thin films. This fundamental understanding of the effect of boundary layer diffusions may generally apply to other chalcogenide nanosheets that can grow rapidly. It can provide useful guidance for the development of general paradigms to control the synthesis of nanosheets.

Metal ion displacements in noncentrosymmetric chalcogenides La{sub 3}Ga{sub 1.67}S{sub 7}, La{sub 3}Ag{sub 0.6}GaCh{sub 7} (Ch=S, Se), and La{sub 3}MGaSe{sub 7} (M=Zn, Cd)

Energy Technology Data Exchange (ETDEWEB)

Iyer, Abishek K. [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G2G2 (Canada); Yin, Wenlong [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G2G2 (Canada); Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900 (China); Rudyk, Brent W. [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G2G2 (Canada); Lin, Xinsong [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G2G2 (Canada); Centre for Oil Sands Sustainability, Northern Alberta Institute of Technology, Edmonton, Alberta, Canada T6N1E5 (Canada); Nilges, Tom [Department of Chemistry, Technical University of Munich, 85748 Garching b. München (Germany); Mar, Arthur, E-mail: arthur.mar@ualberta.ca [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G2G2 (Canada)

2016-11-15

The quaternary Ga-containing chalcogenides La{sub 3}Ag{sub 0.6}GaS{sub 7}, La{sub 3}Ag{sub 0.6}GaSe{sub 7}, La{sub 3}ZnGaSe{sub 7}, and La{sub 3}CdGaSe{sub 7}, as well as the related ternary chalcogenide La{sub 3}Ga{sub 1.67}S{sub 7}, were prepared by reactions of the elements at 950 °C. They adopt noncentrosymmetric hexagonal structures (space group P6{sub 3}, Z=2) with cell parameters (a=10.2 Å, c=6.1 Å for the sulfides; a=10.6 Å, c=6.4 Å for the selenides) that are largely controlled by the geometrical requirements of one-dimensional stacks of Ga-centered tetrahedra separated by the La atoms. Among these compounds, which share the common formulation La{sub 3}M{sub 1–x}GaCh{sub 7} (M=Ga, Ag, Zn, Cd; Ch=S, Se), the M atoms occupy sites within a stacking of trigonal antiprisms formed by Ch atoms. The location of the M site varies between extremes with trigonal antiprismatic (CN6) and trigonal planar (CN3) geometry. Partial occupation of these sites and intermediate ones accounts for the considerable versatility of these structures and the occurrence of large metal displacement parameters. The site occupations can be understood in a simple way as being driven by the need to satisfy appropriate bond valence sums for both the M and Ch atoms. Band structure calculations rationalize the substoichiometry observed in the Ag-containing compounds (La{sub 3}Ag{sub 0.6}GaS{sub 7}, La{sub 3}Ag{sub 0.6}GaSe{sub 7}) as a response to overbonding. X-ray photoelectron spectroscopy supports the presence of monovalent Ag atoms in these compounds, which are not charge-balanced. - Graphical abstract: Partial occupation of metal atoms in multiple sites accounts for versatility in Ga-containing chalcogenides La{sub 3}M{sub 1–x}GaCh{sub 7} with noncentrosymmetric hexagonal structures. - Highlights: • La{sub 3}M{sub 1–x}GaCh{sub 7} (M =Ga, Ag, Zn, Cd; Ch =S, Se) adopt related hexagonal structures. • Large displacements of M atoms originate from partial occupation of multiple

New chalcogenide glasses in the CdTe-AgI-As{sub 2}Te{sub 3} system

Energy Technology Data Exchange (ETDEWEB)

Kassem, M. [Univ. Picardie Jules Verne, F-80000 Amiens (France); Le Coq, D., E-mail: david.lecoq@univ-littoral.fr [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France); Boidin, R.; Bychkov, E. [Univ. Lille Nord de France, F-59000 Lille (France); ULCO, LPCA, EA 4493, F-59140 Dunkerque (France)

2012-02-15

Highlights: Black-Right-Pointing-Pointer Determination of the glass-forming region in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system. Black-Right-Pointing-Pointer Characterization of macroscopic properties of the new CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Characterization of the total conductivity of CdTe-AgI-As{sub 2}Te{sub 3} glasses. Black-Right-Pointing-Pointer Comparison between the selenide and telluride equivalent systems. -- Abstract: Chalcogenide glasses in the pseudo-ternary CdTe-AgI-As{sub 2}Te{sub 3} system were synthesized and the glass-forming range was determined. The maximum content of CdTe in this glass system was found to be equal to 15 mol.%. The macroscopic characterizations of samples have consisted in Differential Scanning Calorimetry, density, and X-ray diffraction measurements. The cadmium telluride addition does not generate any significant change in the glass transition temperature but the resistance of binary AgI-As{sub 2}Te{sub 3} glasses towards crystallisation is estimated to be decreasing on the base of {Delta}T = T{sub x} - T{sub g} parameter. The total electrical conductivity {sigma} was measured by complex impedance spectroscopy. First, the CdTe additions in the (AgI){sub 0.5}(As{sub 2}Te{sub 3}){sub 0.5} host glass, (CdTe){sub x}(AgI){sub 0.5-x/2}(As{sub 2}Te{sub 3}){sub 0.5-x/2} lead to a conductivity decrease at x {<=} 0.05. Then, the behaviour is reversed at 0.05 {<=} x {<=} 0.15. The obtained results are discussed by comparison with the equivalent selenide system.

Structure, ionic Conductivity and mobile Carrier Density in Fast Ionic Conducting Chalcogenide Glasses

International Nuclear Information System (INIS)

Wenlong Yao

2006-01-01

This thesis consists of six sections. The first section gives the basic research background on the ionic conduction mechanism in glass, polarization in the glass, and the method of determining the mobile carrier density in glass. The proposed work is also included in this section. The second section is a paper that characterizes the structure of MI + M 2 S + (0.1 Ga 2 S 3 + 0.9 GeS 2 ) (M = Li, Na, K and Cs) glasses using Raman and IR spectroscopy. Since the ionic radius plays an important role in determining the ionic conductivity in glasses, the glass forming range for the addition of different alkalis into the basic glass forming system 0.1 Ga 2 S 3 + 0.9 GeS 2 was studied. The study found that the change of the alkali radius for the same nominal composition causes significant structure change to the glasses. The third section is a paper that investigates the ionic conductivity of MI + M 2 S + (0.1Ga 2 S 3 + 0.9 GeS 2 ) (M = Li, Na, K and Cs) glasses system. Corresponding to the compositional changes in these fast ionic conducting glasses, the ionic conductivity shows changes due to the induced structural changes. The ionic radius effect on the ionic conductivity in these glasses was investigated. The fourth section is a paper that examines the mobile carrier density based upon the measurements of space charge polarization. For the first time, the charge carrier number density in fast ionic conducting chalcogenide glasses was determined. The experimental impedance data were fitted using equivalent circuits and the obtained parameters were used to determine the mobile carrier density. The influence of mobile carrier density and mobility on the ionic conductivity was separated. The fifth section is a paper that studies the structures of low-alkali-content Na 2 S + B 2 S 3 (x (le) 0.2) glasses by neutron and synchrotron x-ray diffraction. Similar results were obtained both in neutron and synchrotron x-ray diffraction experiments. The results provide direct

II-I2-IV-VI4 (II = Sr,Ba; I = Cu,Ag; IV = Ge,Sn; VI = S,Se): Earth-Abundant Chalcogenides for Thin Film Photovoltaics

Science.gov (United States)

Zhu, Tong; Huhn, William P.; Shin, Donghyeop; Mitzi, David B.; Blum, Volker; Saparov, Bayrammurad

Chalcogenides such as CdTe, CIGSSe, and CZTSSe are successful for thin film photovoltaics (PV) but contain elements that are rare, toxic, or prone to the formation of detrimental antisite disorder. Recently, the BaCu2SnS4-xSex system has been shown to offer a prospective path to circumvent these problems. While early prototypes show efficiencies of a few percent, many avenues remain to optimize the materials, including the underlying chemical composition. In this work, we explore 16 compounds II-I2-IV-VI4 to help identify new candidate materials for PV, with predictions based on both known experimental and computationally derived structures that belong to five different space groups. We employ hybrid density functional theory (HSE06) to explore the band gap tunability by substituting different elements, and other characteristics such as the effective mass and the absorption coefficient. Compounds containing Cu (rather than Ag) are found to have direct or nearly direct band gaps. Depending on the compound, replacing S with Se leads to a decrease of the predicted band gaps by 0.2-0.8 eV and to somewhat decreasing hole effective masses.

Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

Science.gov (United States)

Horsley, Kimberly Anne

Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

Enhancement in CO2 Adsorption Capacity and Selectivity in the Chalcogenide Aerogel CuSb2S4 by Post-synthetic Modification with LiCl

KAUST Repository

Ahmed, Ejaz

2015-09-11

The new chalcogel CuSb2S4 was obtained by reacting Cu(OAc)2·H2O with KSbS2 in a water/formamide mixture at room temperature. In order to modify the gas adsorption capacity the synthesized CuSb2S4 aerogel was loaded with different amounts of LiCl. CO2 adsorption measurements on the CuSb2S4 aerogel before and after treatment with LiCl showed more than three times increased uptake of the LiCl-modified chalcogel. The selectivities of the gas pairs CO2/H2 and CO2/CH4 in the LiCl-treated chalcogel are 235 and 105 respectively and amongst the highest reported for chalcogenide-based aerogels. In comparison with other porous materials like zeolites, activated carbon and most of the Metal Organic Frameworks (MOFs) or Porous Organic Frameworks (POFs), our synthesized aerogels show good air and moisture stability. Although, the CO2 storage capacity of our aerogels is relatively low, however the selectivity of CO2 over H2 or CH4 in LiCl-loaded aerogels are higher than in zeolites, activated carbon as well as some MOFs like Cu-BTC and MOF-5 etc.

In-situ X-ray Nanocharacterization of Defect Kinetics in Chalcogenide Solar Cell Materials

Energy Technology Data Exchange (ETDEWEB)

Bertoni, Mariana [Arizona State Univ., Tempe, AZ (United States); Lai, Barry [Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); Masser, Jorg [Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); Buonassisi, Tonio [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

2016-09-21

) correlate positively, and In negatively with charge collection efficiency for cells with low Ga content, both at grain boundaries and in grain cores. For cells with high Ga content, the charge collection efficiency depends to much lesser extent on the elemental distribution. The objective is three folded: (1) develop an x-ray in-situ microscopy capability to simulate growth and processing conditions, (2) apply it to elucidate performance-governing defect kinetics in chalcogenide solar cell materials, and (3) to study approaches to engineer materials from the nanoscale up. The development of these capabilities will enable experimental characterization to take place under actual processing and operating conditions and it will have impact well beyond the proposed research, enabling future studies on a large variety of materials system where electronic properties depend on underlying structural or chemical inhomogeneities.

Structure, ionic conductivity and mobile carrier density in fast ionic conducting chalcogenide glasses

Energy Technology Data Exchange (ETDEWEB)

Yao, Wenlong [Iowa State Univ., Ames, IA (United States)

2006-01-01

This thesis consists of six sections. The first section gives the basic research background on the ionic conduction mechanism in glass, polarization in the glass, and the method of determining the mobile carrier density in glass. The proposed work is also included in this section. The second section is a paper that characterizes the structure of MI + M₂S + (0.1 Ga₂S₃ + 0.9 GeS₂) (M = Li, Na, K and Cs) glasses using Raman and IR spectroscopy. Since the ionic radius plays an important role in determining the ionic conductivity in glasses, the glass forming range for the addition of different alkalis into the basic glass forming system 0.1 Ga₂S₃ + 0.9 GeS₂ was studied. The study found that the change of the alkali radius for the same nominal composition causes significant structure change to the glasses. The third section is a paper that investigates the ionic conductivity of MI + M₂S + (0.1Ga₂S₃ + 0.9 GeS₂) (M = Li, Na, K and Cs) glasses system. Corresponding to the compositional changes in these fast ionic conducting glasses, the ionic conductivity shows changes due to the induced structural changes. The ionic radius effect on the ionic conductivity in these glasses was investigated. The fourth section is a paper that examines the mobile carrier density based upon the measurements of space charge polarization. For the first time, the charge carrier number density in fast ionic conducting chalcogenide glasses was determined. The experimental impedance data were fitted using equivalent circuits and the obtained parameters were used to determine the mobile carrier density. The influence of mobile carrier density and mobility on the ionic conductivity was separated. The fifth section is a paper that studies the structures of low-alkali-content Na₂S + B₂S₃ (x ≤ 0.2) glasses by neutron and synchrotron x-ray diffraction

Pulse number control of electrical resistance for multi-level storage based on phase change

International Nuclear Information System (INIS)

Nakayama, K; Takata, M; Kasai, T; Kitagawa, A; Akita, J

2007-01-01

Phase change nonvolatile memory devices composed of SeSbTe chalcogenide semiconductor thin film were fabricated. The resistivity of the SeSbTe system was investigated to apply to multi-level data storage. The chalcogenide semiconductor acts as a programmable resistor that has a large dynamic range. The resistance of the chalcogenide semiconductor can be set to intermediate resistances between the amorphous and crystalline states using electric pulses of a specified power, and it can be controlled by repetition of the electric pulses. The size of the memory cell used in this work is 200 nm thick with a contact area of 1 μm diameter. The resistance of the chalcogenide semiconductor gradually varies from 41 kΩ to 840 Ω within octal steps. The resistance of the chalcogenide semiconductor decreases with increasing number of applied pulses. The step-down characteristic of the resistance can be explained as the crystalline region of the active phase change region increases with increasing number of applied pulses. The extent of crystallization was also estimated by the overall resistivity of the active region of the memory cell

Numerical study of propagation properties of surface plasmon polaritons in nonlinear media

KAUST Repository

Sagor, Rakibul Hasan

2016-03-29

We present a time-domain algorithm for simulating nonlinear propagation of surface plasmon polaritons (SPPs) in chalcogenide glass. Due to the high non-linearity property and strong dispersion and confinement chalcogenide glasses are widely known as ultrafast nonlinear materials. We have used the finite difference time domain (FDTD) method to develop the simulation algorithm for the current analysis. We have modeled the frequency dependent dispersion properties and third order nonlinearity property of chalcogenide glass utilizing the general polarization algorithm merged in the auxiliary differential equation (ADE) method. The propagation dynamics of the whole structure with and without third order nonlinearity property of chalcogenide glass have been simulated and the effect of nonlinearity on the propagation properties of SPP has been investigated. © 2016 EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.

Optical studies on Zn-doped lead chalcogenide (PbSe){sub 100−x}Zn{sub x} thin films composed of nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Ashraf, Md. Tanweer [Department of Applied Sciences and Humanities, Jamia Millia Islamia (JMI), New Delhi-25 (India); Salah, Numan A. [Center of Nanotechnology, King Abdulaziz University, Jeddah (Saudi Arabia); Rafat, M. [Department of Applied Sciences and Humanities, Jamia Millia Islamia (JMI), New Delhi-25 (India); Zulfequar, M. [Department of Physics, Jamia Millia Islamia, New Delhi-25 (India); Khan, Zishan H., E-mail: zishan_hk@yahoo.co.in [Department of Applied Sciences and Humanities, Jamia Millia Islamia (JMI), New Delhi-25 (India)

2016-08-01

The effect of laser-Irradiation on the optical properties of Zn-doped PbSe thin films composed of nanoparticles has been studied. Scanning electron microscope (SEM) investigations suggest the formation of nanoparticles of average size of 50 nm for all the studied Zn compositions. XRD studies show that the as-prepared thin films are polycrystalline in nature. The formation of nanoparticles of Zn-doped PbSe has been confirmed by indexing the crystal planes as observed in the XRD spectra. The addition of Zn in (PbSe){sub 100−x}Zn{sub x} thin films result in the blue shift in photoluminescence spectra, this blue shift is associated with the narrowing of the band gap. Optical absorption measurements reveal a direct band gap for the present samples, which decreases on increasing the Zn content. The same trend has also been observed for the samples irradiated with laser. Further, the calculated values of Urbach energy are found to increase with the increase in Zn contents for the as-prepared as well as laser-irradiated samples. All the above observations agree well with the results of optical band gap and suggest that the decrease in band gap may be due to increase in band tails, defects and particle size. - Highlights: • Nanoparticles of Zn doped (PbSe){sub 100−x}Zn{sub x} lead chalcogenides have been synthesized. • Effect of laser irradiation on optical properties of (PbSe){sub 100−x}Zn{sub x} has been studied. • A blue shift in PL spectra is obtained on Zn incorporation.

Numerical study of propagation properties of surface plasmon polaritons in nonlinear media

KAUST Repository

Sagor, Rakibul Hasan; Ghulam Saber, Md.; Alsunaidi, Mohammad

2016-01-01

We present a time-domain algorithm for simulating nonlinear propagation of surface plasmon polaritons (SPPs) in chalcogenide glass. Due to the high non-linearity property and strong dispersion and confinement chalcogenide glasses are widely known

Amorphous chalcogenides as random octahedrally bonded solids: I. Implications for the first sharp diffraction peak, photodarkening, and Boson peak

Science.gov (United States)

Lukyanov, Alexey; Lubchenko, Vassiliy

2017-09-01

We develop a computationally efficient algorithm for generating high-quality structures for amorphous materials exhibiting distorted octahedral coordination. The computationally costly step of equilibrating the simulated melt is relegated to a much more efficient procedure, viz., generation of a random close-packed structure, which is subsequently used to generate parent structures for octahedrally bonded amorphous solids. The sites of the so-obtained lattice are populated by atoms and vacancies according to the desired stoichiometry while allowing one to control the number of homo-nuclear and hetero-nuclear bonds and, hence, effects of the mixing entropy. The resulting parent structure is geometrically optimized using quantum-chemical force fields; by varying the extent of geometric optimization of the parent structure, one can partially control the degree of octahedrality in local coordination and the strength of secondary bonding. The present methodology is applied to the archetypal chalcogenide alloys AsxSe1-x. We find that local coordination in these alloys interpolates between octahedral and tetrahedral bonding but in a non-obvious way; it exhibits bonding motifs that are not characteristic of either extreme. We consistently recover the first sharp diffraction peak (FSDP) in our structures and argue that the corresponding mid-range order stems from the charge density wave formed by regions housing covalent and weak, secondary interactions. The number of secondary interactions is determined by a delicate interplay between octahedrality and tetrahedrality in the covalent bonding; many of these interactions are homonuclear. The present results are consistent with the experimentally observed dependence of the FSDP on arsenic content, pressure, and temperature and its correlation with photodarkening and the Boson peak. They also suggest that the position of the FSDP can be used to infer the effective particle size relevant for the configurational equilibration in

Room temperature oxidative intercalation with chalcogen hydrides: Two-step method for the formation of alkali-metal chalcogenide arrays within layered perovskites

International Nuclear Information System (INIS)

Ranmohotti, K.G. Sanjaya; Montasserasadi, M. Dariush; Choi, Jonglak; Yao, Yuan; Mohanty, Debasish; Josepha, Elisha A.; Adireddy, Shiva; Caruntu, Gabriel; Wiley, John B.

2012-01-01

Highlights: ► Topochemical reactions involving intercalation allow construction of metal chalcogenide arrays within perovskite hosts. ► Gaseous chalcogen hydrides serve as effect reactants for intercalation of sulfur and selenium. ► New compounds prepared by a two-step intercalation strategy are presented. -- Abstract: A two-step topochemical reaction strategy utilizing oxidative intercalation with gaseous chalcogen hydrides is presented. Initially, the Dion-Jacobson-type layered perovskite, RbLaNb 2 O 7 , is intercalated reductively with rubidium metal to make the Ruddlesden-Popper-type layered perovskite, Rb 2 LaNb 2 O 7 . This compound is then reacted at room-temperature with in situ generated H 2 S gas to create Rb-S layers within the perovskite host. Rietveld refinement of X-ray powder diffraction data (tetragonal, a = 3.8998(2) Å, c = 15.256(1) Å; space group P4/mmm) shows the compound to be isostructural with (Rb 2 Cl)LaNb 2 O 7 where the sulfide resides on a cubic interlayer site surrounded by rubidium ions. The mass increase seen on sulfur intercalation and the refined S site occupation factor (∼0.8) of the product indicate a higher sulfur content than expected for S 2− alone. This combined with the Raman studies, which show evidence for an H-S stretch, indicate that a significant fraction of the intercalated sulfide exists as hydrogen sulfide ion. Intercalation reactions with H 2 Se (g) were also carried out and appear to produce an isostructural selenide compound. The utilization of such gaseous hydride reagents could significantly expand multistep topochemistry to a larger number of intercalants.

The Tl{sub 2}S–PbS–SiS{sub 2} system and the crystal and electronic structure of quaternary chalcogenide Tl{sub 2}PbSiS{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Mozolyuk, M.Y.; Piskach, L.V. [Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Avenue, 43025, Lutsk (Ukraine); Fedorchuk, A.O. [Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, 50 Pekarska Street, 79010, Lviv (Ukraine); Olekseyuk, I.D.; Parasyuk, O.V. [Department of Inorganic and Physical Chemistry, Lesya Ukrainka Eastern European National University, 13 Voli Avenue, 43025, Lutsk (Ukraine); Khyzhun, O.Y., E-mail: khyzhun@ipms.kiev.ua [Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, 03142, Kyiv (Ukraine)

2017-07-01

Chalcogenides of the quasi-ternary system Tl{sub 2}S–PbS–SiS{sub 2} were synthesized in the evacuated silica ampoules by the melting and annealing technique. Phase equilibria in the system was investigated by XRD method. Isothermal section of the system was studied, and two intermediate quaternary phases were discovered to exist (Tl{sub 2}PbSiS{sub 4}, ∼Tl{sub 2}PbSi{sub 3}S{sub 8}). The quasi-binary section Tl{sub 2}SiS{sub 3}–PbS was investigated by DTA. Its phase diagram was constructed, and it was established that the equimolar compound melts incongruently at 818 K. The crystal structure of the quaternary compound Tl{sub 2}PbSiS{sub 4} was determined by X-ray powder diffraction. It crystallizes in the monoclinic space group P2{sub 1}/a with the unit-cell parameters a = 8.8141(4), b = 9.0150(5), c = 10.4383(5) Å, and β = 94.490(4)° (Tl{sub 2}PbGeS{sub 4} structure type). Reliability factors calculated in the isotropic approximation were found to be R{sub I} = 0.0564 and R{sub P} = 0.1070. The Tl{sub 2}PbSiS{sub 4} single crystal was tested with X-ray photoelectron spectroscopy. In particular, the XPS core-level and valence-band spectra were recorded for pristine and Ar{sup +}-ion bombarded surfaces of Tl{sub 2}PbSiS{sub 4}. The Tl{sub 2}PbSiS{sub 4} single crystal was found to be rather stable with respect to Ar{sup +}-ion irradiation. We have also measured the X-ray emission band depicting the energy distribution of mainly the S 3p states and compared it on a common energy scale with the XPS valence-band spectrum of the Tl{sub 2}PbSiS{sub 4} crystal. The above comparison indicates that the S 3p states contribute substantively in the upper portion of the valence band of Tl{sub 2}PbSiS{sub 4}, with their significant contributions in other portions of the valence-band region. - Highlights: • Chalcogenides of the quasi-ternary system Tl{sub 2}S–PbS–SiS{sub 2} were synthesized. • Two intermediate quaternary phases were discovered to exist (Tl

Ab initio investigation of B16(GeS), B27(FeB) and B33(CrB/TlI) phases of lead chalcogenides

International Nuclear Information System (INIS)

Demiray, Ferhat; Berber, Savas

2013-01-01

We report an ab initio investigation of the intermediate phases occurring in the pressure-induced B1–B2 phase transitions of lead chalcogenides PbX (X = S, Se and Te). The equilibrium lattice constants and atomic positions were calculated without symmetry constraints. The total energies of the optimized structures under pressure were obtained to determine the structures of possible intermediate phases and transitions between these structures. PbTe prefers to be in the B27 structure in the whole transition pressure range while the intermediate phase of PbSe is B27 at lower pressures and becomes B16/B33 at ≈5 GPa. Our results help in understanding the difficulties in experimental investigations of the intermediate phase of PbSe. The intermediate phase of PbS is in the B27 structure at lower pressure values, but it should be in the B16/B33 structure with a transition around ≈6 GPa. Our finding that it is possible to find the intermediate structures of PbS and PbSe in B27 and B16/B33 while PbTe adopts only B27 as the intermediate structure is in good agreement with previous research. The electronic structures of the three structures remain semi-conducting in their calculated optimized structures and the fundamental electronic energy gap decreases with increasing pressure. The projected density of states indicates that the bonding between the Pb atom and the chalcogen has both covalent and ionic contributions with a charge transfer from the Pb atom to the chalcogen. (paper)

Optoelectronic behavior of Quaternary Uranium Chalcogenides Rb{sub 2}Pd{sub 3}UM{sub 6} (M = S, Se): A first principle study

Energy Technology Data Exchange (ETDEWEB)

Din, Haleem Ud [Department of Physics, Hazara University, Mansehra (Pakistan); Azam, Sikander; Khan, Saleem Ayaz [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, Mascara 29000 (Algeria)

2014-12-05

Highlights: • The Fermi surface and optoelectronic properties for Rb{sub 2}Pd{sub 3}UM{sub 6} (M = S, Se) compounds are investigated for the first time. • The electronic band structure calculations reveal a metallic nature for the herein studied compounds. • The bonding nature between different atoms is discussed. • Considerable anisotropy was found between the principal complex tensor components for the two compounds. - Abstract: First principle calculations of electronic, Fermi surface, electronic charge density and optical properties of Quaternary Uranium Chalcogenides Rb{sub 2}Pd{sub 3}UM{sub 6} (M = S, Se) are performed using full potential linear augmented plane wave (FP-LAPW) method within the frame work of density functional theory. Using mBJ method, the electronic band curves overlap at Fermi level and show metallic band structure for both compounds. The calculated densities of states (DOS) spectra show that the valence band is mainly attributed to Rb-p, Pd-d and S-s/p or Se-s/p states; conduction band is mainly attributed to Pd-d, U-f and S-p or Se-p/d states. From the electronic charge density spectrum, it is revealed that a strong covalent bond exists between Pd and S, and Pd or Se while charge transfer between U and S, U and Se, Rb and S, and Rb and Se atoms results in ionic bond nature. It is noted from Fermi surface calculations that both compounds comprise same number of fast velocity electrons but differs in slow or intermediate velocity of electrons. The calculated frequency dependent dielectric function, energy loss function and reflectivity show a considerable anisotropy for both compounds.

Room temperature oxidative intercalation with chalcogen hydrides: Two-step method for the formation of alkali-metal chalcogenide arrays within layered perovskites

Energy Technology Data Exchange (ETDEWEB)

Ranmohotti, K.G. Sanjaya; Montasserasadi, M. Dariush; Choi, Jonglak; Yao, Yuan; Mohanty, Debasish; Josepha, Elisha A.; Adireddy, Shiva; Caruntu, Gabriel [Department of Chemistry and the Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148-2820 (United States); Wiley, John B., E-mail: jwiley@uno.edu [Department of Chemistry and the Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148-2820 (United States)

2012-06-15

Highlights: ► Topochemical reactions involving intercalation allow construction of metal chalcogenide arrays within perovskite hosts. ► Gaseous chalcogen hydrides serve as effect reactants for intercalation of sulfur and selenium. ► New compounds prepared by a two-step intercalation strategy are presented. -- Abstract: A two-step topochemical reaction strategy utilizing oxidative intercalation with gaseous chalcogen hydrides is presented. Initially, the Dion-Jacobson-type layered perovskite, RbLaNb{sub 2}O{sub 7}, is intercalated reductively with rubidium metal to make the Ruddlesden-Popper-type layered perovskite, Rb{sub 2}LaNb{sub 2}O{sub 7}. This compound is then reacted at room-temperature with in situ generated H{sub 2}S gas to create Rb-S layers within the perovskite host. Rietveld refinement of X-ray powder diffraction data (tetragonal, a = 3.8998(2) Å, c = 15.256(1) Å; space group P4/mmm) shows the compound to be isostructural with (Rb{sub 2}Cl)LaNb{sub 2}O{sub 7} where the sulfide resides on a cubic interlayer site surrounded by rubidium ions. The mass increase seen on sulfur intercalation and the refined S site occupation factor (∼0.8) of the product indicate a higher sulfur content than expected for S{sup 2−} alone. This combined with the Raman studies, which show evidence for an H-S stretch, indicate that a significant fraction of the intercalated sulfide exists as hydrogen sulfide ion. Intercalation reactions with H{sub 2}Se{sub (g)} were also carried out and appear to produce an isostructural selenide compound. The utilization of such gaseous hydride reagents could significantly expand multistep topochemistry to a larger number of intercalants.

Modification of band gaps and optoelectronic properties of binary calcium chalcogenides by means of doping of magnesium atom(s) in rock-salt phase- a first principle based theoretical initiative

Science.gov (United States)

Debnath, Bimal; Sarkar, Utpal; Debbarma, Manish; Bhattacharjee, Rahul; Chattopadhyaya, Surya

2018-02-01

The band gaps and optoelectronic properties of binary calcium chalcogenide semiconductors have been modified theoretically by doping magnesium atom(s) into their respective rock-salt unit cells at some specific concentrations x = 0.0, 0.25, 0.50, 0.75 and 1.0 and confirmed such modifications by studying their structural, electronic and optical properties using DFT based FP-LAPW approach. The WC-GGA functional is used to calculate structural properties, while mBJ, B3LYP and WC-GGA are used for calculating electronic and optical properties. The concentration dependences of lattice parameter, bulk modulus and fundamental band gap for each alloy system exhibit nonlinearity. The atomic and orbital origin of different electronic states in the band structure of each compound are explored from its density of states (DOS). The microscopic origin of band gap bowing for each of the alloy systems is explored in terms of volume deformation, charge exchange and structural relaxation. The chemical bonds between the constituent atoms in each compound are found as ionic in nature. Optical properties of each specimen are calculated from its computed spectra of dielectric function, refractive index, extinction coefficient, normal incidence reflectivity, optical conductivity, optical absorption and energy loss function. Several calculated results have been compared with available experimental and other theoretical data.

Mechanical and thermal properties of praseodymium monochalcogenides and monopnictides under pressure

International Nuclear Information System (INIS)

Bhajanker, Sanjay; Srivastava, V.; Pagare, G.; Sanyal, S.P.

2011-01-01

In recent years, a great deal of interest has been focused on rare-earth chalcogenides and pnictides because they have numerous applications in technologies. The praseodymium chalcogenides have attracted great attention due to their potential application in spintronics, spin filtering devices, hyperfine enhanced nuclear cooling, study of combined electron and nuclear order phenomenon at very low temperature

Characterization and Physics-Based Modeling of Electrochemical Memristors

Science.gov (United States)

2015-11-16

5  3.2.1  GexSe1-x Chalcagenide Glass Technology ................................................................. 5  3.2.2  Cu- SiO2 ...potential radiation threats, of which there seem to be few except for some single event effect susceptibility. 15. SUBJECT TERMS chalcogenide glass ...2  3  Task 1 – Chalcogenide Glass Material and

Modular metal chalcogenide chemistry: secondary building blocks as a basis of the silicate-type framework structure of CsLiU(PS_4)_2

International Nuclear Information System (INIS)

Neuhausen, Christine; Rocker, Frank; Tremel, Wolfgang

2012-01-01

The novel uranium thiophosphate CsLiU(PS_4)_2 has been synthesized by reacting uranium metal, Cs_2S, Li_2S, S, and P_2S_5 at 700 C in an evacuated silica tube. The crystal structure was determined by single-crystal X-ray diffraction techniques. CsLiU(PS_4)_2 crystallizes in the rhombohedral space group R anti 3c (a = 15.2797(7) Aa; c = 28.778(2) Aa, V = 5818.7(5) Aa"3, Z = 18). The structure of CsLiU(PS_4)_2 is a unique three-dimensional U(PS_4)_2"2"- framework with large tunnels with an approximate diameter of 6.6 Aa running parallel to the crystallographic c axis. The tunnels are filled with Cs"+ cations. The smaller Li"+ cations are located at tetrahedral sites at the periphery of the channels. In the structure of CsLiU(PS_4)_2 the uranium atoms are coordinated by thiophosphate groups in a pseudotetrahedral fashion, and the PS_4 groups act as linear connectors. Topologically, CsLiU(PS_4)_2 may be regarded a chalcogenide analogue of silicate frameworks, with the uranium atoms and PS_4 groups replacing silicon and oxygen atoms. Alternatively, CsLiU(PS_4)_2 may be viewed as a coordination polymer, which is formed in salt melts by the solid state equivalent of the ''self-assembly'' reactions in solution. Magnetic susceptibility measurements indicated Curie-Weiss-type behavior between 4 K and 300 K. The μ_e_f_f of 2.83 μ_B at 300 K is in agreement with an f"2 configuration of U"4"+. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

N4H9Cu7S4: a hydrazinium-based salt with a layered Cu7S4- framework.

Science.gov (United States)

Mitzi, David B

2007-02-05

Crystals of a hydrazinium-based copper(I) sulfide salt, N4H9Cu7S4 (1), have been isolated by an ambient temperature solution-based process. In contrast to previously reported hydrazinium salts of main-group metal chalcogenides, which consist of isolated metal chalcogenide anions, and ACu7S4 (A = NH4+, Rb+, Tl+, K+), which contains a more three-dimensional Cu7S4- framework with partial Cu-site occupancy, the structure of 1 [P21, a = 6.8621(4) A, b = 7.9851(4) A, c = 10.0983(5) A, beta = 99.360(1) degrees , Z = 2] is composed of extended two-dimensional Cu7S4- slabs with full Cu-site occupancy. The Cu7S4- slabs are separated by a mixture of hydrazinium and hydrazine moieties. Thermal decomposition of 1 into copper(I) sulfide proceeds at a significantly lower temperature than that observed for analogous hydrazinium salts of previously considered metal chalcogenides, completing the transition at temperatures as low as 120 degrees C. Solutions of 1 may be used in the solution deposition of a range of Cu-containing chalcogenide films.

Reversible migration of silver on memorized pathways in Ag-Ge{sub 40}S{sub 60} films

Energy Technology Data Exchange (ETDEWEB)

Orava, J., E-mail: jo316@cam.ac.uk, E-mail: alg13@cam.ac.uk; Greer, A. L., E-mail: jo316@cam.ac.uk, E-mail: alg13@cam.ac.uk [Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Kozicki, M. N. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Yannopoulos, S. N. [Foundation of Research and Technology Hellas - Institute of Chemical Engineering Sciences (FORTH/ICE-HT), Patras, P. O. Box 1414 (Greece)

2015-07-15

Reversible and reproducible formation and dissolution of silver conductive filaments are studied in Ag-photodoped thin-film Ge{sub 40}S{sub 60} subjected to electric fields. A tip-planar geometry is employed, where a conductive-atomic-force microscopy tip is the tip electrode and a silver patch is the planar electrode. We highlight an inherent “memory” effect in the amorphous chalcogenide solid-state electrolyte, in which particular silver-ion migration pathways are preserved “memorized” during writing and erasing cycles. The “memorized” pathways reflect structural changes in the photodoped chalcogenide film. Structural changes due to silver photodoping, and electrically-induced structural changes arising from silver migration, are elucidated using Raman spectroscopy. Conductive filament formation, dissolution, and electron (reduction) efficiency in a lateral device geometry are related to operation of the nano-ionic Programmable Metallization Cell memory and to newly emerging chalcogenide-based lateral geometry MEMS technologies. The methods in this work can also be used for qualitative multi-parameter sampling of metal/amorphous-chalcogenide combinations, characterizing the growth/dissolution rates, retention and endurance of fractal conductive filaments, with the aim of optimizing devices.

Reversible migration of silver on memorized pathways in Ag-Ge40S60 films

Directory of Open Access Journals (Sweden)

J. Orava

2015-07-01

Full Text Available Reversible and reproducible formation and dissolution of silver conductive filaments are studied in Ag-photodoped thin-film Ge40S60 subjected to electric fields. A tip-planar geometry is employed, where a conductive-atomic-force microscopy tip is the tip electrode and a silver patch is the planar electrode. We highlight an inherent “memory” effect in the amorphous chalcogenide solid-state electrolyte, in which particular silver-ion migration pathways are preserved “memorized” during writing and erasing cycles. The “memorized” pathways reflect structural changes in the photodoped chalcogenide film. Structural changes due to silver photodoping, and electrically-induced structural changes arising from silver migration, are elucidated using Raman spectroscopy. Conductive filament formation, dissolution, and electron (reduction efficiency in a lateral device geometry are related to operation of the nano-ionic Programmable Metallization Cell memory and to newly emerging chalcogenide-based lateral geometry MEMS technologies. The methods in this work can also be used for qualitative multi-parameter sampling of metal/amorphous-chalcogenide combinations, characterizing the growth/dissolution rates, retention and endurance of fractal conductive filaments, with the aim of optimizing devices.

Structural and luminescence properties of Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4}:Eu{sup 2+} chalcogenide semiconductor solid solutions

Energy Technology Data Exchange (ETDEWEB)

Tagiyev, B.G. [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Tagiyev, O.B. [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Baku Branch of M.V. Lomonosov Moscow State University, Baku AZ-1143 (Azerbaijan); Mammadov, A.I. [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Quang, Vu Xuan [Institute of Research and Development, Duy Tan University, 550000 Da Nang (Viet Nam); Naghiyev, T.G., E-mail: tural@nagiyev.net [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Jabarov, S.H. [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Bayerisches Geoinstitute, University Bayreuth, d-95440 Bayreuth (Germany); Leonenya, M.S.; Yablonskii, G.P. [Institute of Physics of National Academy Sciences of Belarus, 220072 Minsk (Belarus); Dang, N.T. [Institute of Research and Development, Duy Tan University, 550000 Da Nang (Viet Nam)

2015-12-01

The structural and luminescence properties of chalcogenide semiconductor Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4} solid solutions (x=0.1–0.9) doped with 7 at% of Eu{sup 2+} ions were studied at room temperature. It was found, that the crystal structure of Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4} solid solutions varies with the amount of Ca{sup 2+} cations and phase transition from cubic to orthorhombic takes place with increase of x value. Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4}:Eu{sup 2+} solid solutions exhibit intense photoluminescence in cyan to yellow spectral region depending on x due to 5d→4f electron–dipole transitions in Eu{sup 2+} ions. The peak position of the emission band shifts from 506 nm for x=0.1 to 555 nm for x=0.9 and the full width at half maximum of the emission band varies from 62 nm to 72 nm depending on the symmetry of the crystal lattice. The PL excitation spectrum of Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4}:Eu{sup 2+} covers the range at half maximum from 310 nm to 480 nm for x=0.1 and to 520 nm for x=0.9. It was shown that long-wavelength shift is caused by influence of the growing crystal field strength on Eu{sup 2+} ions.

Optical properties of silver doped amorphous films of composition Ge28S72 and Ge22Ga6S72

Czech Academy of Sciences Publication Activity Database

Bartoš, M.; Wágner, T.; Válková, S.; Pavlišta, M.; Vlček, Milan; Beneš, L.; Frumar, M.

2011-01-01

Roč. 13, 11-12 (2011), 1442-1446 ISSN 1454-4164. [Fifth International Conference on Amorphous and Nanostructured Chalcogenides. Magurele - Bucharest, 26.06.2011-01.07.2011] Institutional research plan: CEZ:AV0Z40500505 Keywords : amorphous films * chalcogenides * optical properties Subject RIV: CA - Inorganic Chemistry Impact factor: 0.457, year: 2011 http://joam.inoe.ro/index.php?option=magazine&op=view&idu=2941&catid=68

Optically – Induced diffusion and dissolution of Ag into thin films of (GeS2)0,8(Ga2S3)0,2

Czech Academy of Sciences Publication Activity Database

Válková, S.; Wágner, T.; Bartoš, M.; Pavlišta, M.; Přikryl, J.; Vlček, Milan; Frumarová, Božena; Beneš, L.; Frumar, M.

2011-01-01

Roč. 13, 11-12 (2011), s. 1553-1558 ISSN 1454-4164. [5th International Conference on Amorphous and Nanostructured Chalcogenides. Bucharest - Magurele, 26.06.2011-01.07.2011] Institutional research plan: CEZ:AV0Z40500505 Keywords : chalcogenides * thin films * optically induced Subject RIV: CA - Inorganic Chemistry Impact factor: 0.457, year: 2011 http://joam.inoe.ro/index.php?option=magazine&op=view&idu=2964&catid=68

Tuning of electronic band gaps and optoelectronic properties of binary strontium chalcogenides by means of doping of magnesium atom(s)- a first principles based theoretical initiative with mBJ, B3LYP and WC-GGA functionals

Science.gov (United States)

Debnath, Bimal; Sarkar, Utpal; Debbarma, Manish; Bhattacharjee, Rahul; Chattopadhyaya, Surya

2018-02-01

First principle based theoretical initiative is taken to tune the optoelectronic properties of binary strontium chalcogenide semiconductors by doping magnesium atom(s) into their rock-salt unit cells at specific concentrations x = 0.0, 0.25, 0.50, 0.75 and 1.0 and such tuning is established by studying structural, electronic and optical properties of designed binary compounds and ternary alloys employing WC-GGA, B3LYP and mBJ exchange-correlation functionals. Band structure of each compound is constructed and respective band gaps under all the potential schemes are measured. The band gap bowing and its microscopic origin are calculated using quadratic fit and Zunger's approach, respectively. The atomic and orbital origins of electronic states in the band structure of any compound are explored from its density of states. The nature of chemical bonds between the constituent atoms in each compound is explored from the valence electron density contour plots. Optical properties of any specimen are explored from the computed spectra of its dielectric function, refractive index, extinction coefficient, normal incidence reflectivity, optical conductivity optical absorption and energy loss function. Several calculated results are compared with available experimental and earlier theoretical data.

Synthesis and Characterization of Novel Quaternary Thioaluminogermanates

KAUST Repository

Al-Bloushi, Mohammed

2013-05-01

Metal chalcogenides form an important class of inorganic materials, which include several technologically important applications. The design of metal chlcogenides is of technological interest and has encouraged recent research into moderate temperature solid-state synthetic methods for the single crystal growth of new materials. The aim of this project is the investigation and development of synthetic methodology for the synthesis of novel metal chlcogenides. The new inorganic compounds of the type “M(AlS2)(GeS2)” (M = Na and K) are new metal-chalcogenides, synthesized by the classical solid state approach. The characterization of these compounds was carried out by Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Single crystal and powder X-ray diffraction, solid state Nuclear Magnetic Resonance (NMR), Ultraviolet-visible (UV-VIS), Infrared (IR) and Raman spectroscopy. These theses study the synthesis of metal chalcogenides through the use of standard chemical techniques. The systematic studies demonstrate the effect of the reactants ratio and reaction temperature on the synthesis and growth of the single crystals. Metal chalcogenides have several potential applications in gas separation, ion exchange, environmental remediation, and energy storage. Especially, the ion exchange materials have found\\tpossible applications in waste-water treatment, water softening, metal separation, and production of high purity water.

FY 2006 Infrared Photonics Final Report

Energy Technology Data Exchange (ETDEWEB)

Anheier, Norman C.; Allen, Paul J.; Bernacki, Bruce E.; Ho, Nicolas; Krishnaswami, Kannan; Qiao, Hong (Amy); Schultz, John F.

2006-12-28

Research done by the Infrared Photonics team at Pacific Northwest National Laboratory (PNNL) is focused on developing miniaturized integrated optics and optical fiber processing methods for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin-film deposition capabilities, direct laser writing techniques, infrared photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology—all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to quantum cascade laser (QCL) transmitter miniaturization. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions.

http://www.tkea.com.ua/tkea/2008/6_2008/pdf/12.zip

Directory of Open Access Journals (Sweden)

Kavetskyy T. S.

2008-12-01

Full Text Available It is established radiation-induced decreasing in fragility of structural network takes place for γ-irradiated sample of Ge15,8As21S63,2 chalcogenide glass. It is concluded on the basis of the results obtained that radiation modification of chalcogenide glass leads to the rigidity of its matrix, and the vibrational (boson contribution in the low-frequency spectral region is dominatе on the relaxation quasi-elastic scattering.

Green, red and near-infrared photon up-conversion in Ga–Ge–Sb–S:Er{sup 3+} amorphous chalcogenides

Energy Technology Data Exchange (ETDEWEB)

Strizik, L., E-mail: lukas.strizik@centrum.cz [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Zhang, J. [Division of Advanced Nuclear Engineering, Center for Information Materials, Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-dong, Pohang, Gyeongbuk 790-784 (Korea, Republic of); Wagner, T. [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Oswald, J. [Institute of Physics of the ASCR, v.v.i., Cukrovarnicka 10, 16200 Prague (Czech Republic); Kohoutek, T. [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Walsh, B.M. [NASA Langley Research Center, Hampton, VA 23681 (United States); Prikryl, J. [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Svoboda, R. [Department of Physical Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Liu, C. [State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, 122 Luoshi Road, Hongshan, Wuhan, Hubei 430070 (China); Frumarova, B. [Institute of Macromolecular Chemistry of Czech Academy of Sciences, v.v.i., Heyrovskeho nam. 2, Prague (Czech Republic); Frumar, M. [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Pavlista, M. [Department of Applied Physics and Mathematics, Faculty of Chemical Technology, University of Pardubice, Studentska 84, 53210 Pardubice (Czech Republic); and others

2014-03-15

We report on compositional tuning in Er{sup 3+} ions doped Ga–Ge–Sb–S glassy system allowing for effective {sup 2}H{sub 11/2}→{sup 4}I{sub 15/2} (530 nm), {sup 4}S{sub 3/2}→{sup 4}I{sub 15/2} (550 nm), {sup 4}F{sub 9/2}→{sup 4}I{sub 15/2} (660 nm), {sup 4}I{sub 9/2}→{sup 4}I{sub 15/2} (810 nm), {sup 4}I{sub 11/2}→{sup 4}I{sub 15/2} (990 nm) intra-4f electronic transition emissions of Er{sup 3+} ions under 808 nm, 980 nm or 1550 nm laser pumping. We changed the composition of well-known Ge{sub 20}Ga{sub 5}Sb{sub 10}S{sub 65} glass to Ge{sub 25}Ga{sub 10−x}Sb{sub x}S{sub 65}, where x=0.5 at%, 2.5 at% or 5.0 at% and doped it with 0.5 at% of Er{sup 3+} ions. The short-wavelength absorption edge of the studied glassy hosts is blue-shifted by substitution of Sb with Ga to ∼500 nm making the green emission at 530 nm and 550 nm and even 495 nm ({sup 4}F{sub 7/2}→{sup 4}I{sub 15/2}) observable, while the glass stability was kept high characterized with the difference of T{sub c}−T{sub g}>100 K and mean coordination numbers 2.67–2.71. Up-conversion emission decay times of all anti-Stokes emissions were in the range of 0.2–2.1 ms. The influence of Ga substitution with Sb on the structure and the optical properties was investigated. The spectroscopic parameters for Er{sup 3+} ions with local environment change were analyzed based on Judd–Ofelt theory. -- Highlights: • Compositional tuning of Ga–Ge–Sb–S:Er{sup 3+} phosphor leads to efficient photon up-conversion under 808 nm, 980 nm and 1550 nm laser pumping. • The 530 nm, 550 nm, 660 nm, 810 nm and 990 nm up-conversion emission bands were detected and their lifetimes determined. • Judd–Ofelt theory was used to study the Er{sup 3+} local environment in Ga–Ge–Sb–S glassy host matrix. • Thermally stable chalcogenide Ga–Ge–Sb–S:Er{sup 3+} phosphors are proposed as candidates for up-converting layers enhancing the silicon solar cell efficiency.

Influence of Two Photon Absorption on Soliton Self-Frequency Shift

DEFF Research Database (Denmark)

Steffensen, Henrik; Rottwitt, Karsten; Jepsen, Peter Uhd

2011-01-01

The creation of mid-infrared supercontinua necessitates the use of soft-glass fibers. However, some materials, like chalcogenide, have a substantial two photon absorption. We introduce a model for soliton self-frequency shift that successfully includes this effect.......The creation of mid-infrared supercontinua necessitates the use of soft-glass fibers. However, some materials, like chalcogenide, have a substantial two photon absorption. We introduce a model for soliton self-frequency shift that successfully includes this effect....

FY 2004 Infrared Photonics Final Report

Energy Technology Data Exchange (ETDEWEB)

Anheier, Norman C.; Allen, Paul J.; Keller, Paul E.; Bennett, Wendy D.; Martin, Peter M.; Johnson, Bradley R.; Sundaram, S. K.; Riley, Brian J.; Martinez, James E.; Qiao, Hong (Amy); Schultz, John F.

2004-10-01

Research done by the Infrared Photonics team at PNNL is focused on developing miniaturized integrated optics for the MWIR and LWIR by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin film deposition capabilities, direct-laser writing techniques, IR photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology - all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to Quantum Cascade Laser (QCL) transmitter miniaturization. QCLs provide a viable infrared laser source for a new class of laser transmitters capable of meeting the performance requirements for a variety of national security sensing applications. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions.

FY 2005 Infrared Photonics Final Report

Energy Technology Data Exchange (ETDEWEB)

Anheier, Norman C.; Allen, Paul J.; Ho, Nicolas; Krishnaswami, Kannan; Johnson, Bradley R.; Sundaram, S. K.; Riley, Bradley M.; Martinez, James E.; Qiao, Hong (Amy); Schultz, John F.

2005-12-01

Research done by the Infrared Photonics team at Pacific Northwest National Laboratory (PNNL) is focused on developing miniaturized integrated optics for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications by exploiting the unique optical and material properties of chalcogenide glass. PNNL has developed thin-film deposition capabilities, direct laser writing techniques, infrared photonic device demonstration, holographic optical element design and fabrication, photonic device modeling, and advanced optical metrology—all specific to chalcogenide glass. Chalcogenide infrared photonics provides a pathway to quantum cascade laser (QCL) transmitter miniaturization. QCLs provide a viable infrared laser source for a new class of laser transmitters capable of meeting the performance requirements for a variety of national security sensing applications. The high output power, small size, and superb stability and modulation characteristics of QCLs make them amenable for integration as transmitters into ultra-sensitive, ultra-selective point sampling and remote short-range chemical sensors that are particularly useful for nuclear nonproliferation missions. During FY 2005, PNNL’s Infrared Photonics research team made measurable progress exploiting the extraordinary optical and material properties of chalcogenide glass to develop miniaturized integrated optics for mid-wave infrared (MWIR) and long-wave infrared (LWIR) sensing applications. We investigated sulfur purification methods that will eventually lead to routine production of optical quality chalcogenide glass. We also discovered a glass degradation phenomenon and our investigation uncovered the underlying surface chemistry mechanism and developed mitigation actions. Key research was performed to understand and control the photomodification properties. This research was then used to demonstrate several essential infrared photonic devices, including LWIR single-mode waveguide devices and

Superconducting selenides intercalated with organic molecules: synthesis, crystal structure, electric and magnetic properties, superconducting properties, and phase separation in iron based-chalcogenides and hybrid organic-inorganic superconductors

Science.gov (United States)

Krzton-Maziopa, Anna; Pesko, Edyta; Puzniak, Roman

2018-06-01

Layered iron-based superconducting chalcogenides intercalated with molecular species are the subject of intensive studies, especially in the field of solid state chemistry and condensed matter physics, because of their intriguing chemistry and tunable electric and magnetic properties. Considerable progress in the research, revealing superconducting inorganic–organic hybrid materials with transition temperatures to superconducting state, T c, up to 46 K, has been brought in recent years. These novel materials are synthesized by low-temperature intercalation of molecular species, such as solvates of alkali metals and nitrogen-containing donor compounds, into layered FeSe-type structure. Both the chemical nature as well as orientation of organic molecules between the layers of inorganic host, play an important role in structural modifications and may be used for fine tuning of superconducting properties. Furthermore, a variety of donor species compatible with alkali metals, as well as the possibility of doping also in the host structure (either on Fe or Se sites), makes this system quite flexible and gives a vast array of new materials with tunable electric and magnetic properties. In this review, the main aspects of intercalation chemistry are discussed with a particular attention paid to the influence of the unique nature of intercalating species on the crystal structure and physical properties of the hybrid inorganic–organic materials. To get a full picture of these materials, a comprehensive description of the most effective chemical and electrochemical methods, utilized for synthesis of intercalated species, with critical evaluation of their strong and weak points, related to feasibility of synthesis, phase purity, crystal size and morphology of final products, is included as well.

Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties

International Nuclear Information System (INIS)

Ueda, Kazushige; Hiramatsu, Hidenori; Hirano, Masahiro; Kamiya, Toshio; Hosono, Hideo

2006-01-01

Applying the concept of materials design for transparent conductive oxides to layered oxychalcogenides, several p-type and n-type layered oxychalcogenides were proposed as wide-gap semiconductors and their basic optical and electrical properties were examined. The layered oxychalcogenides are composed of ionic oxide layers and covalent chalcogenide layers, which bring wide-gap and conductive properties to these materials, respectively. The electronic structures of the materials were examined by normal/inverse photoemission spectroscopy and energy band calculations. The results of the examinations suggested that these materials possess unique features more than simple wide-gap semiconductors. Namely, the layered oxychalcogenides are considered to be extremely thin quantum wells composed of the oxide and chalcogenide layers or 2D chalcogenide crystals/molecules embedded in an oxide matrix. Observation of step-like absorption edges, large band gap energy and large exciton binding energy demonstrated these features originating from 2D density of states and quantum size effects in these layered materials

Mössbauer studies of two-electron centers with negative correlation energy in crystalline and amorphous semiconductors

International Nuclear Information System (INIS)

Bordovsky, G. A.; Nemov, S. A.; Marchenko, A. V.; Seregin, P. P.

2012-01-01

The results of the study of donor U − -centers of tin and germanium in lead chalcogenides by Mössbauer emission spectroscopy are discussed. The published data regarding the identification of amphoteric U − -centers of tin in glassy binary arsenic and germanium chalcogenides using Mössbauer emission spectroscopy, and in multicomponent chalcogenide glasses using Mössbauer absorption spectroscopy are considered. Published data concerning the identification of two-atom U − -centers of copper in lattices of semimetal copper oxides by Mössbauer emission spectroscopy are analyzed. The published data on the detection of spatial inhomogeneity of the Bose-Einstein condensate in superconducting semiconductors and semimetal compounds, and on the existence of the correlation between the electron density in lattice sites and the superconducting transition temperature are presented. The principal possibility of using Mössbauer U − -centers as a tool for studying the Bose-Einstein condensation of electron pairs during the superconducting phase transition in semiconductors and semimetals is considered.

Structural characterization of a Cu(II) thin-film aging in a Cu-nitrate solution

International Nuclear Information System (INIS)

Mear, F.O.; Essi, M.; Sistat, P.; Guimon, M.-F.; Gonbeau, D.; Pradel, A.

2009-01-01

The response of thin-film copper (II) ion-selective electrodes based on chalcogenide glassy Cu-Sb-Ge-Se is described according to the soaking time in a 10 -4 M copper (II) solution. The chalcogenide membrane/solution interface has been investigated by using electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) in order to understand the sensing properties. During the first month of the soaking, an alteration of the membrane by a chemical change without alteration of the sensor detection performance has been observed.

Long-chain amine-templated synthesis of gallium sulfide and gallium selenide nanotubes

Science.gov (United States)

Seral-Ascaso, A.; Metel, S.; Pokle, A.; Backes, C.; Zhang, C. J.; Nerl, H. C.; Rode, K.; Berner, N. C.; Downing, C.; McEvoy, N.; Muñoz, E.; Harvey, A.; Gholamvand, Z.; Duesberg, G. S.; Coleman, J. N.; Nicolosi, V.

2016-06-01

We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization.We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01663d

Surfactant-thermal syntheses, structures, and magnetic properties of Mn-Ge-sulfides/selenides

KAUST Repository

Zhang, Guodong

2014-10-06

Although either surfactants or amines have been investigated to direct the crystal growth of metal chalcogenides, the synergic effect of organic amines and surfactants to control the crystal growth has not been explored. In this report, several organic bases (hydrazine monohydrate, ethylenediamine (en), 1,2-propanediamine (1,2-dap), and 1,3-propanediamine (1,3-dap)) have been employed as structure-directing agents (SDAs) to prepare four novel chalcogenides (Mn3Ge2S7(NH3)4 (1), [Mn(en)2(H2O)][Mn(en)2MnGe3Se9] (2), (1,2-dapH)2{[Mn(1,2-dap)2]Ge2Se7} (3), and (1,3-dapH)(puH)MnGeSe4(4) (pu = propyleneurea) under surfactant media (PEG-400). These as-prepared new crystalline materials provide diverse metal coordination geometries, including MnS3N tetrahedra, MnGe2Se7 trimer, and MnGe3Se10 T2 cluster. Compounds 1-3 have been fully characterized by single-crystal X-ray diffraction (XRD), powder XRD, UV-vis spectra, Fourier transform infrared spectroscopy, and thermogravimetric analysis. Moreover, magnetic measurements for compound 1 showed an obvious antiferromagnetic transition at ∼9 K. Our research not only enriches the structural chemistry of the transitional-metal/14/16 chalcogenides but also allows us to better understand the synergic effect of organic amines and surfactants on the crystallization of metal chalcogenides.

Radiation-sensitive material and method of recording information upon radiation-sensitive material

International Nuclear Information System (INIS)

Petrov, V.V.; Krjuchin, A.A.

1981-01-01

The invention can be employed for recording binary information in memory units of electronic computers, in video-recording equipment, laser recording devices and other recording means. The proposed radiation-sensitive material comprises a metallic layer made of silver, or copper, or nickel, or thallium, or alloy thereof, an inorganic material layer made of arsenic chalcogenide, or antimony chalcogenide, or bismuth chalcogenide, and a separation layer disposed between the metallic layer and the inorganic material layer made of a material which is inert relative to said layers, which separation layer has a thickness sufficient for preventing interaction between the metallic layer and the inorganic material layer when the radiation-sensitive materials is exposed to electromagnetic or corpuscular radiation having a power density lower than a threshold value required for the breakdown of the separation layer in the area exposed to radiation. The separation layer can be made from As, Sb, Si or Ge or their oxides, metallic oxides of e.g. Al, Ti, V or Fe, or from polyorganosiloxane films. (author)

Physicochemical properties of new As2Se3–Ag4SSe–CdTe glasses

International Nuclear Information System (INIS)

Aljihmani, Lilia; Vassilev, Venceslav; Hristova-Vasileva, Temenuga; Fidancevska, Emilija

2009-01-01

Chalcogenide glasses from the As 2 Se 3 –Ag 4 SSe–CdTe system were synthesized. The basic physicochemical parameters such as density (d), microhardness (HV) and the temperatures glass transition Tg were measured. Compactness (C) and some thermomechanical characteristics such as volume (Vh) and formation energy (Eh) of micro-voids in the glassy network, as well as the module of elasticity (E) were calculated. A correlation between the composition and properties of the As 2 Se 3 –Ag 4 SSe–CdTe glasses was established and comprehensively discussed. Keywords: chalcogenide glasses, density, microhardness, compactness, elasticity modulus, thermomechanical characteristics

Multifunctional materials and composites

Science.gov (United States)

Seo, Dong-Kyun; Jeon, Ki-Wan

2017-08-22

Forming multifunctional materials and composites thereof includes contacting a first material having a plurality of oxygen-containing functional groups with a chalcogenide compound, and initiating a chemical reaction between the first material and the chalcogenide compound, thereby replacing oxygen in some of the oxygen-containing functional groups with chalcogen from the chalcogen-containing compound to yield a second material having chalcogen-containing functional groups and oxygen-containing functional groups. The first material is a carbonaceous material or a macromolecular material. A product including the second material is collected and may be processed further to yield a modified product or a composite.

Infrared sensor for water pollution and monitoring

Science.gov (United States)

Baudet, E.; Gutierrez-Arrovo, A.; Bailleul, M.; Rinnert, E.; Nemec, P.; Charrier, J.; Bodiou, L.; Colas, F.; Compère, C.; Boussard, C.; Bureau, B.; Michel, K.; Nazabal, V.

2017-05-01

Development of Mid-infrared sensors for the detection of biochemical molecules is a challenge of great importance. Mid-infrared range (4000 - 400 cm-1) contains the absorption bands related to the vibrations of organic molecules (nitrates, hydrocarbons, pesticides, etc.). Chalcogenide glasses are an important class of amorphous materials appropriate for sensing applications. Indeed, they are mainly studied and used for their wide transparency in the infrared range (up to 15 μm for selenide glasses) and high refractive index (between 2 and 3). The aim of this study is to synthesize and characterize chalcogenide thin films for developing mid-IR optical waveguides. Therefore, two (GeSe2)100-x(Sb2Se3)x chalcogenide glasses, where x=10 and 50 were chosen for their good mid-IR transparency, high stability against crystallization and their refractive index contrast suitable for mid-IR waveguiding. Chalcogenide glasses were prepared using the conventional melting and quenching method and then used for RF magnetron sputtering deposition. Sputtered thin films were characterized in order to determine dispersion of refractive index in UV-Vis-NIR-MIR. Obtained results were used for the simulation of the optical design in mid-infrared (λ = 7.7 μm). Selenide ridge waveguide were prepared by RIE-ICP dry etching process. Single-mode propagation at 7.7 μm was observed. Optical losses of 0.7 +/- 0.3 and 2.5 +/- 0.1 dB.cm-1 were measured in near-infrared (λ = 1.55 μm) and midinfrared (λ = 7.7 μm), respectively. Achieved results are promising for the fabrication of an integrated optical sensor operating in the mid-infrared.

Interconnection between the geometry and the structure of unit cells of substances in inorganic chemistry

International Nuclear Information System (INIS)

Eliseev, A.A.; Kuz'micheva, G.M.

1979-01-01

Regularity of interconnection between the geometry and the structure of elementary cells of inorganic compounds is investigated. Structural motives on the basis of NaCl structure for all phases of rare earth chalcogenides are built. It is shown that compounds (phases of variable content), detected on 23 (out of 48 possible) state diagrams of rare earths chalcogen binary systems are closely bound both from the viewpoint of geometric dimensions of elementary cells and structural motives. It is shown that using ion representations the number of formula units in the cell of a new rare earth chalcogenide can be calculated and its structural motif can be built

Preparation of porous three-dimensional quaternary thioantimonates(III) ACuSb{sub 2}S{sub 4} (A=Rb, Cs) through a surfactant-thermal method

Energy Technology Data Exchange (ETDEWEB)

Shen, Yaying; Liu, Chang; Hou, Peipei; Zhi, Mingjia; Zhou, Chunmei; Liu, Yi [Zhejiang Univ., Hangzhou (China). State Key Lab. of Silicon Materials; Chai, Wenxiang [China Jiliang Univ., Hangzhou (China). College of Materials Science and Engineering; Cheng, Jian-Wen [Zhejiang Normal Univ., Jinhua (China). Inst. of Physical Chemistry; Zhang, Quichun [Nanyang Technological Univ., Singapore (Singapore). School of Materials Science and Engineering; Nanyang Technological Univ., Singapore (Singapore). Div. of Chemistry and Biological Chemistry

2015-12-15

Two novel porous three-dimensional quaternary thioantimonates(III) ACuSb{sub 2}S{sub 4} (A=Rb, Cs) were successfully synthesized by employing the neutral surfactant PEG-400 (PEG=polyethyleneglycol) as reaction media, these are significantly different from the known quaternary A-Cu-Sb-S thioantimonates(III) with two-dimensional (2D) crystal structures. This is the first time that crystalline quaternary chalcogenides have been prepared in surfactant media. Both experimental and theoretical studies confirm they are semiconductors with narrow band gaps. Our results demonstrated that the surfactant-thermal strategy could offer a new opportunity to explore novel chalcogenides with diverse crystal structures and interesting physicochemical properties.

Investigation of Nanophase Materials for Thermoelectric Applications

National Research Council Canada - National Science Library

Stokes, Kevin

2004-01-01

.... Watson Research Center. Our major accomplishments include the chemical synthesis of nanoparticles, nanorods and nanowires of lead chalcogenide, bismuth calcogenide and bismuth antimony materials...

The new Fe-based superconductors

International Nuclear Information System (INIS)

Mao, Zhiqiang

2011-01-01

The discovery of unconventional superconductivity in doped iron pnictides has ushered in a new era of high temperature superconductivity. The superconductivity of these materials occurs in close proximity to magnetic instability; superconductivity is achieved by suppressing a long-range antiferromagnetic (AFM) order through charge carrier doping or pressure. In this talk, I will first give a brief overview of the phase diagrams of iron-based superconductors, and then talk about our recent research on iron chalcogenide Fe 1+y (Te 1-x Se x ) superconductors, which is structurally the simplest of the Fe-based superconductors. Although the Fermi surface of iron chalcogenides is similar to iron pnictides, the parent compound Fe 1+y Te exhibits AFM order with in-plane magnetic wave-vector (π, 0). This contrasts the pnictide parent compounds where the magnetic order has an in-plane magnetic wave-vector (π, π) that connects hole and electron parts of the Fermi surface. Despite these differences, both the pnictide and chalcogenide Fe-superconductors exhibit superconducting spin resonances around (π, π), suggesting a common symmetry for their superconducting order parameter. A central question in this burgeoning field is therefore how (π, π) superconductivity can emerge from a (π, 0) magnetic instability. I will address this issue in my talk. I will show the phase diagram of electronic and magnetic properties we recently established for this system and discuss the relationship between magnetic coupling and electronic properties. Our results reveal that the magnetic soft mode evolving from the (π, 0)-type magnetic long-range order is associated with weak charge carrier localization. Bulk superconductivity occurs only as magnetic correlations near (π, 0) are strongly suppressed and the magnetic mode at (π, π) becomes dominant; this suggests a common magnetic origin for superconductivity in iron chalcogenide and pnictide superconductors. (author)

Electrical and dielectrical properties of As-Se-Te glasses

Czech Academy of Sciences Publication Activity Database

Kubliha, M.; Kalužný, J.; Pedlíková, Jitka; Zavadil, Jiří; Labaš, V.

2007-01-01

Roč. 9, č. 10 (2007), s. 3082-3087 ISSN 1454-4164. [ ANC -3: International Conference on Amourphous and Nanostructured Chalcogenides /3./. Brasov, 02.07.20007-06.07.2007] R&D Projects: GA ČR GA104/02/0799; GA ČR GA104/05/0878 Grant - others:GA SR(SK) APVV-20-043505; GA SR(SK) APVT-20-011304; VEGA(SK) 1/1080/04 Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z40320502 Source of funding: V - iné verejné zdroje ; V - iné verejné zdroje ; V - iné verejné zdroje Keywords : chalcogenide glasses * electrical conductivity * transmission * dielectric properties Subject RIV: CA - Inorganic Chemistry Impact factor: 0.827, year: 2007

Fluorescence of Er3+ doped La2S3.3Ga2S3 glasses

International Nuclear Information System (INIS)

Reisfeld, R.; Bornstein, A.

1978-01-01

In this paper the authors report the preparation and fluorescence of Er 3+ in chalcogenide glasses. In the oxide glasses it has been shown that the multiphonon transition rates of the RE are independent of the coupling between a given oxide glass and rare earth ion, but dependent exponentially on the number of phonons of highest energy bridging the emitting and next-lower level. It is of interest to establish whether changing the glass matrix will affect the amount of electron phonon coupling. In addition, because of their low phonon energy and high refractive index, the RE doped chalcogenide glasses will form a new type of fluorescent material. This may be of interest in new RE lasers. (Auth.)

Crystallization study of Te–Bi–Se glasses

Indian Academy of Sciences (India)

Unknown

Thermal stability; chalcogenide glasses; glass forming ability; glass transition temperature. 1. Introduction ... as well as their wide technological applications including threshold and ... are other important aspects such as ON-state current,.

Conductivity study on GeS2-Ga2S3-AgI-Ag chalcohalide glasses

Czech Academy of Sciences Publication Activity Database

Ren, J.; Yan, Q.; Wágner, T.; Zima, Vítězslav; Frumar, M.; Frumarová, Božena; Chen, G.

2013-01-01

Roč. 114, č. 2 (2013), 023701_1-023701_5 ISSN 0021-8979 Institutional support: RVO:61389013 Keywords : chalcogenide glasses * conductivity Subject RIV: CA - Inorganic Chemistry Impact factor: 2.185, year: 2013

Properties of the chalcogenide–carbon nano tubes and graphene composite materials

International Nuclear Information System (INIS)

Singh, Abhay Kumar; Kim, JunHo; Park, Jong Tae; Sangunni, K.S.

2015-01-01

Highlights: • Chalcogenides. • Melt quenched. • Composite materials. • Multi walled carbon nano tubes. • Bilayer graphene. - Abstract: Composite can deliver more than the individual elemental property of the material. Specifically chalcogenide- multi walled carbon nano tubes and chalcogenide- bilayer graphene composite materials could be interesting for the investigation, which have been less covered by the investigators. We describe micro structural properties of Se 55 Te 25 Ge 20, Se 55 Te 25 Ge 20 + 0.025% multi walled carbon nano tubes and Se 55 Te 25 Ge 20 + 0.025% bilayer graphene materials. This gives realization of the alloying constituents inclusion/or diffusion inside the multi walled carbon nano tubes and bilayer graphene under the homogeneous parent alloy configuration. Raman spectroscopy, X-ray photoelectron spectroscopy, UV/Visible spectroscopy and Fourier transmission infrared spectroscopy have also been carried out under the discussion. A considerable core energy levels peak shifts have been noticed for the composite materials by the X-ray photoelectron spectroscopy. The optical energy band gaps are measured to be varied in between 1.2 and 1.3 eV. In comparison to parent (Se 55 Te 25 Ge 20 ) alloy a higher infrared transmission has been observed for the composite materials. Subsequently, variation in physical properties has been explained on the basis of bond formation in solids

Optical characterization of a-Se85−xTe15Znx thin films

Indian Academy of Sciences (India)

analysis of transmission spectra, measured at normal incidence, in the spectral ... Optical band gap (Eg) has also been calculated and found to decrease ... Chalcogenide glasses have recently gained much importance as, unlike conventional.

Half-metallic ferromagnetism in (Z B, Al, Ga, and In) Heusler alloys ...

Indian Academy of Sciences (India)

K H SADEGHI

2018-01-03

11], and zincblende (ZB) transition-metal pnictides and chalcogenides [12–17]. Among HM ferromagnets, Heusler alloys are attractive because of their technical applications (in spin-injection devices [18], spin-filters [19], ...

Evaluation of impedance spektra of ionic-transport materials by a random-walk approach considering electrode and bulk response

Czech Academy of Sciences Publication Activity Database

Patil, D. S.; Shimakawa, K.; Zima, Vítězslav; Macák, J.; Wágner, T.

2013-01-01

Roč. 113, č. 14 (2013), 143705_1-143705_4 ISSN 0021-8979 Institutional support: RVO:61389013 Keywords : impedance * ionic conductivity * chalcogenide glasses Subject RIV: CA - Inorganic Chemistry Impact factor: 2.185, year: 2013

Synthesis, structure and optical properties of thin films form GeS2-In2S3 system deposited by thermal co-evaporation

Czech Academy of Sciences Publication Activity Database

Todorov, R.; Petkov, K.; Kincl, Miloslav; Černošková, E.; Vlček, Milan; Tichý, Ladislav

2014-01-01

Roč. 558, 2 May (2014), s. 298-305 ISSN 0040-6090 Institutional support: RVO:61389013 Keywords : chalcogenide glasses * thin films * optical properties Subject RIV: CA - Inorganic Chemistry Impact factor: 1.759, year: 2014

Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

Science.gov (United States)

Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

2017-02-01

Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic

Nano-scaled chalcogenide-based memories

International Nuclear Information System (INIS)

Redaelli, Andrea; Pirovano, Agostino

2011-01-01

Today phase change memory (PCM) technology has reached product maturity at 90 and 65 nm nodes, while the 45 nm node is under development and is expected to enter in the market soon. The continuous decrease of the cell size with scaling leads to an effective active area as small as 150 nm 2 and an active volume involved in the phase transformation of about 10 4 nm 3 , thus entering definitively into the nanotechnology world. At this extremely reduced dimension, the reliability of the device must be carefully investigated. In this work we show that the cycling performance of the device is well maintained, not being a problem for either the bipolar transistor or the storage element. The phase transition from the amorphous to the crystalline state is, of course, one of the most interesting phenomena, impacting cell retention capability and device performance. The stochastic nature of nano-nuclei percolation in the amorphous matrix is shown as an important ingredient in the retention of PCM devices. The related dispersion in crystallization times is analyzed through a crystallization Monte Carlo model and a physical insight into nucleation and growth mechanisms is provided.

Nonresonant Faraday rotation in glassy semiconductors

Science.gov (United States)

van den Keybus, P.; Grevendonk, W.

1986-06-01

Nonresonant interband Faraday rotation in amorphous semiconductors, as a function of photon energy, may be described by an equation derived for direct transitions in crystalline semiconductors. In this paper it is shown how this equation may be obtained for the former case also, assuming a parabolic density of states function N(E) and a correlation between valence- and conduction-band states. The analysis of experiments on chalcogenide glasses reveals a Faraday-rotation energy gap EFRg that is significantly larger than the optical gap Eoptg. The effect is attributed to transitions between extended states, so that it is meaningful to compare EFRg with the mobility gap Eμg. For oxide glasses both gaps are comparable but for chalcogenide glasses EFRg is too large by a few tenths of 1 eV.

High-pressure-assisted synthesis of high-volume ZnGeP2 polycrystalline

Science.gov (United States)

Huang, Changbao; Wu, Haixin; Xiao, Ruichun; Chen, Shijing; Ma, Jiaren

2018-06-01

The pnictide and chalcogenide semiconductors are promising materials for the applications in the field of photoelectric. High-purity and high-volume polycrystalline required in the real-world applications is hard to be synthesized due to the high vapor pressure of phosphorus and sulfur components at high temperature. A new high-pressure-resisted method was used to investigate the synthesis of the nonlinear-optical semiconductor ZnGeP2. The high-purity ZnGeP2 polycrystalline material of approximately 500 g was synthesized in one run, which enables the preparation of nominally stoichiometric material. Since increasing internal pressure resistance of quartz crucible and reducing the reaction space, the high-pressure-resisted method can be used to rapidly synthesize other pnictide and chalcogenide semiconductors and control the components ratio.

Compositional dependence of physical properties in Se-Sb-In glassy system

Energy Technology Data Exchange (ETDEWEB)

Sharma, Shaveta, E-mail: shaveta.sharma1987@yahoo.com; Sharma, Rita; Kumar, Praveen; Chander, Ravi; Thangaraj, R.; Mian, M. [Semiconductors Laboratory, Department of Physics, GND University, Amritsar (India)

2015-08-28

The growing interest in the investigation of the properties of chalcogenide glasses stems from their potential application as phase change recording media and photoconductive elements in solid state devices.In the present work, the different theoretical parameters viz. coordination number, constraints, number of lone pair electrons, bond energy, heat of atomization, mean bond energy and glass transition temperature for Se{sub 75-x}Sb{sub 25}In{sub x} (x= 0, 1, 3, 5, 7, 9, 11) chalcogenide system have been calculated and their composition variation has been discussed. It has been found that average heat of atomization increases with In content. The glass transition temperature and mean bond energy increases with In. An attempt has been made to explain the varying trend of various parameters with increasing In content.

Effect of thallium on the optical properties and structure of thin As-S-Tl films

Czech Academy of Sciences Publication Activity Database

Petkov, K.; Todorov, R.; Kincl, Miloslav; Tichý, Ladislav

2005-01-01

Roč. 7, č. 5 (2005), s. 2587-2594 ISSN 1454-4164 Institutional research plan: CEZ:AV0Z40500505 Keywords : chalcogenide thin films Subject RIV: CA - Inorganic Chemistry Impact factor: 1.138, year: 2005

On the photo-induced shift of the optical gap in amorphous Ge6As43S35Se16 film

Czech Academy of Sciences Publication Activity Database

Kincl, Miloslav; Tasseva, J.; Petkov, K.; Knotek, P.; Tichý, Ladislav

2009-01-01

Roč. 11, č. 4 (2009), s. 395-398 ISSN 1454-4164 Institutional research plan: CEZ:AV0Z40500505 Keywords : amorphous chalcogenide film Subject RIV: CA - Inorganic Chemistry Impact factor: 0.433, year: 2009

Photo-expansion in Ge-As-S amorphous film monitored by diital holograpic microscopy and atomic force microscopy

Czech Academy of Sciences Publication Activity Database

Knotek, P.; Arseva, D.; Vateva, E.; Tichý, Ladislav

2009-01-01

Roč. 11, č. 4 (2009), s. 391-394 ISSN 1454-4164 Institutional research plan: CEZ:AV0Z40500505 Keywords : amorphous chalcogenide films Subject RIV: CA - Inorganic Chemistry Impact factor: 0.433, year: 2009

Photoluminescence and ESR of glasses of the Ge-S system

International Nuclear Information System (INIS)

Cernoskova, E.; Cernosek, Z.; Holubova, J.

1999-01-01

In this work the chalcogenide glasses were studied by photoluminescence, electron spin resonance (ESR) as well as optically induce ESR (LESR) methods. Dependence of energy of luminescence and Stokes shift on glass composition was determined

On the thickness dependence of both the optical band gap and reversible photodarkening in amorphous Ge-Se films.

Czech Academy of Sciences Publication Activity Database

Kutálek, P.; Tichý, Ladislav

2016-01-01

Roč. 619, 30 November (2016), s. 336-341 ISSN 0040-6090 Institutional support: RVO:61389013 Keywords : amorphous chalcogenides * thin films * optical band gap Subject RIV: CA - Inorganic Chemistry Impact factor: 1.879, year: 2016

Space-charge-limited conduction in Se 90 Sb 4 Ag 6 glassy alloy

Indian Academy of Sciences (India)

Keywords. Chalcogenide glasses; Meyer–Neldel rule; SCLC; pre-exponential factor. ... found to be field dependent. Pre-exponential factor is found to depend on the activation energy and obeys Meyer–Neldel rule. ... Current Issue Volume 41 ...

On the “compositional threshold“ in GeS2-Sb2S3, GeSe2-Sb2Se3 and GeS2-Bi2S3 glasses

Czech Academy of Sciences Publication Activity Database

Tichý, Ladislav; Tichá, H.

2015-01-01

Roč. 152, 15 February (2015), s. 1-3 ISSN 0254-0584 Institutional support: RVO:61389013 Keywords : chalcogenide glasses * hetero three atom linkages * eutectic compositon Subject RIV: CA - Inorganic Chemistry Impact factor: 2.101, year: 2015

SPP propagation in nonlinear glass-metal interface

KAUST Repository

Sagor, Rakibul Hasan; Alsunaidi, Mohammad A.; Ooi, Boon S.

2011-01-01

The non-linear propagation of Surface-Plasmon-Polaritons (SPP) in single interface of metal and chalcogenide glass (ChG) is considered. A time domain simulation algorithm is developed using the Finite Difference Time Domain (FDTD) method

Enhanced Mobility-Lifetime Products in PbS Colloidal Quantum Dot Photovoltaics

KAUST Repository

Jeong, Kwang S.; Tang, Jiang; Liu, Huan; Kim, Jihye; Schaefer, Andrew W.; Kemp, Kyle; Levina, Larissa; Wang, Xihua; Hoogland, Sjoerd; Debnath, Ratan; Brzozowski, Lukasz; Sargent, Edward H.; Asbury, John B.

2012-01-01

obtained in the visible region in lead chalcogenide CQD photovoltaics. However, the corresponding efficiencies for band gap radiation in the near-infrared lag behind because the thickness of CQD photovoltaic layers from which charge carriers can

Synchrotron radiation photoelectron spectroscopy studies of self-organization in As.sub.40./sub.Se.sub.60./sub. nanolayers stored under ambient conditions and after laser irradiation

Czech Academy of Sciences Publication Activity Database

Kondrat, O.; Popovich, N.; Holomb, R.; Mitsa, V.; Lyamayev, V.; Tsud, N.; Cháb, Vladimír; Matolín, V.; Prince, K. C.

2012-01-01

Roč. 358, č. 21 (2012), s. 2910-2916 ISSN 0022-3093 Institutional support: RVO:68378271 Keywords : chalcogenide glass * photostructural changes * photoelectron spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.597, year: 2012

Nanomaterials for solar energy

KAUST Repository

Revaprasadu, Neerish; Bakr, Osman; Ramasamy, Karthik; Malik, Mohammad A.

2013-01-01

Nanostructured metal chalcogenides of the elements copper, iron, tin, lead and cadmium have attracted interest in their use as colloidal nanocrystal inks for solar cells. Some of these materials have the advantages of being available in abundance

Annual report of the IASc

Indian Academy of Sciences (India)

2017-09-15

Sep 15, 2017 ... Career in Science: A series of lecture workshops on ..... does there exist a natural resolution of the hierarchy ..... complex chalcogenides: Effect of lone pair, ...... options), work–life balance in a career in science .... Accountants.

Structural and electronic properties of Cu2Q and CuQ (Q = O, S, Se, and Te) studied by first-principles calculations

Science.gov (United States)

Zhao, Ting; Wang, Yu-An; Zhao, Zong-Yan; Liu, Qiang; Liu, Qing-Ju

2018-01-01

In order to explore the similarity, difference, and tendency of binary copper-based chalcogenides, the crystal structure, electronic structure, and optical properties of eight compounds of Cu2Q and CuQ (Q = O, S, Se, and Te) have been calculated by density functional theory with HSE06 method. According to the calculated results, the electronic structure and optical properties of Cu2Q and CuQ present certain similarities and tendencies, with the increase of atomic number of Q elements: the interactions between Cu-Q, Cu-Cu, and Q-Q are gradually enhancing; the value of band gap is gradually decreasing, due to the down-shifting of Cu-4p states; the covalent feature of Cu atoms is gradually strengthening, while their ionic feature is gradually weakening; the absorption coefficient in the visible-light region is also increasing. On the other hand, some differences can be found, owing to the different crystal structure and component, for example: CuO presents the characteristics of multi-band gap, which is very favorable to absorb infrared-light; the electron transfer in CuQ is stronger than that in Cu2Q; the absorption peaks and intensity are very strong in the ultraviolet-light region and infrared-light region. The findings in the present work will help to understand the underlying physical mechanism of binary copper-based chalcogenides, and available to design novel copper-based chalcogenides photo-electronics materials and devices.

Photoelectrochemical studies on aqueous suspensions of some ...

Indian Academy of Sciences (India)

KASEM K KASEM∗ and AUBREY FINLEY. School of Sciences ... CdS/ZnS semiconductor (SC) nanoparticle in phosphate buffers containing [Fe(CN)6]4−. Manipulations of ... of the doped oxides or chalcogenides, and consequently alters the ...

Photonic-crystal switch divider based on Ge2Sb2Te5 thin films.

Science.gov (United States)

Ma, Beijiao; Zhang, Peiqing; Wang, Hui; Zhang, Tengyu; Zeng, Jianghui; Zhang, Qian; Wang, Guoxiang; Xu, Peipeng; Zhang, Wei; Dai, Shixun

2016-11-10

A three-port phase-change photonic-crystal switch divider based on Ge2Sb2Te5 chalcogenide thin film was proposed. The chalcogenide material used was determined to have a high refractive index and fast phase-change speed by using laser radiation. The structure with a T-junction cavity was used to achieve three switch functions: switching "ON" in only one output port, switching "OFF" in both output ports, and dividing signals into two output ports. The transmission properties of the designed device at 2.0 μm were studied by the finite difference time domain method, which showed that the switch divider can achieve very high switching efficiency by optimizing T-junction cavity parameters. The scaling laws of photonic crystals revealed that the operating wavelength of the designed structure can be easily extended to another wavelength in the midinfrared region.

Crystallization processes in Ge2Sb2Se4Te glass

Czech Academy of Sciences Publication Activity Database

Svoboda, R.; Bezdička, Petr; Gutwirth, J.; Malek, J.

2015-01-01

Roč. 61, JAN (2015), s. 207-214 ISSN 0025-5408 Institutional support: RVO:61388980 Keywords : Chalcogenides * Glass es * Differential scanning calorimetry (DSC) * X-ray diffraction * Crystal structure Subject RIV: CA - Inorganic Chemistry Impact factor: 2.435, year: 2015

Pramana – Journal of Physics | Indian Academy of Sciences

Indian Academy of Sciences (India)

GST) chalcogenide glasses used in the rewritable phase change memory (PCM) devices. The main concern at present is to improve their ability to withstand a large number of phase change cycles, by choosing the right composition. The two ...

Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses

Czech Academy of Sciences Publication Activity Database

Messaddeq, S. H.; Li, M. S.; Ležal, Dimitrij; Messaddeq, Y.

2002-01-01

Roč. 4, č. 2 (2002), s. 375-380 ISSN 1454-4164 Institutional research plan: CEZ:AV0Z4032918 Keywords : light-induced effects * chalcogenide glasses * relief gratings Subject RIV: CA - Inorganic Chemistry Impact factor: 0.446, year: 2002

Repairing Nanoparticle Surface Defects

NARCIS (Netherlands)

Marino, Emanuele; Kodger, Thomas E.; Crisp, R.W.; Timmerman, Dolf; MacArthur, Katherine E.; Heggen, Marc; Schall, Peter

2017-01-01

Solar devices based on semiconductor nanoparticles require the use of conductive ligands; however, replacing the native, insulating ligands with conductive metal chalcogenide complexes introduces structural defects within the crystalline nanostructure that act as traps for charge carriers. We

Electronic phase diagrams and competing ground states of complex iron pnictides and chalcogenides. A Moessbauer spectroscopy and muon spin rotation/relaxation study

Energy Technology Data Exchange (ETDEWEB)

Kamusella, Sirko

2017-03-01

In this thesis the superconducting and magnetic phases of LiOH(Fe,Co)(Se,S), CuFeAs/CuFeSb, and LaFeP{sub 1-x}As{sub x}O - belonging to the 11, 111 and 1111 structural classes of iron-based arsenides and chalcogenides - are investigated by means of {sup 57}Fe Moessbauer spectroscopy and muon spin rotation/relaxation (μSR). Of major importance in this study is the application of high magnetic fields in Moessbauer spectroscopy to distinguish and characterize ferro- (FM) and antiferromagnetic (AFM) order. A user-friendly Moessbauer data analysis program was developed to provide suitable model functions not only for high field spectra, but relaxation spectra or parameter distributions in general. In LaFeP{sub 1-x}As{sub x}O the reconstruction of the Fermi surface is described by the vanishing of the Γ hole pocket with decreasing x. The continuous change of the orbital character and the covalency of the d-electrons is shown by Moessbauer spectroscopy. A novel antiferromagnetic phase with small magnetic moments of ∼ 0.1 μ{sub B} state is characterized. The superconducting order parameter is proven to continuously change from a nodal to a fully gapped s-wave like Fermi surface in the superconducting regime as a function of x, partially investigated on (O,F) substituted samples. LiOHFeSe is one of the novel intercalated FeSe compounds, showing strongly increased T{sub C} = 43 K mainly due to increased interlayer spacing and resulting two-dimensionality of the Fermi surface. The primary interest of the samples of this thesis is the simultaneously observed ferromagnetism and superconductivity. The local probe techniques prove that superconducting sample volume gets replaced by ferromagnetic volume. Ferromagnetism arises from magnetic order with T{sub C} = 10 K of secondary iron in the interlayer. The tendency of this system to show (Li,Fe) disorder is preserved upon (Se,S) substitution. However, superconductivity gets suppressed. The results of Moessbauer spectroscopy

Recent progress in copper antimony chalcogenides thin films and photovoltaic devices%铜锑硫族薄膜材料及其光伏器件研究进展

Institute of Scientific and Technical Information of China (English)

王冲; 杨波; 唐江

2017-01-01

薄膜太阳能电池具有材料用量少、生产耗能低、高温弱光发电性能好、易于建筑集成等优势,是非常有竞争力的光伏发电技术之一.铜锑硫族材料价格低廉、稳定性高、绿色无毒、原料丰富,且具有合适的禁带宽度和较大的吸光系数,理论转换效率可达30％以上,是非常有潜力的薄膜太阳能电池吸光层材料.本文综述了近年来铜锑硫族材料光伏领域的研究成果,重点介绍了材料的晶体结构、光电特性、制备方法以及光伏器件的研究进展,并对其发展趋势和下一步工作方向进行了总结和展望.%In recent years,owing its advantages such as high material utilization and low energy consumption during manufacturing,strong low light performance and high energy output during operation,and easy integration with buildings,thin film solar cell has become a very competitive technology for photovoltaic application.Particularly,copper antimony chalcogenides (Cu-Sb-S/Se) have attracted tremendous research attention as the promising absorber candidates because of the advantages of low cost,high stability and nontoxic composition,large absorption coefficient and appropriate band gap.In the Cu-Sb-S/Se system,there are four kinds of stoichiometric ratio phases with Cu:Sb:S/Se of 1:1:2,3:1:3;3:1:4 and 12:4:13.Among them,CuSbS2 and CuSbSe2 have appropriate bandgaps of ～1.5 and ～1.1 eV,large absorption coefficient of ～ 105 cm-1,which is larger than CuInSe2,and low grain growth temperature (about 300-400℃C).Theoretical calculations indicate that CuSbS2 and CuSbSe2 solar cells have higher theoretical maximum efficiency than CuInSe2,and the majority defects are shallow defects.Various approaches have been explored to fabricate CuSbS2 and CuSbSe2 thin films,including direct thermal evaporation,post-annealing after chemical bath deposition,spray pyrolysis,electrodeposition,magnetron sputtering and so on.In the last few years,several groups have

Ablation of (GeS2)0.3(Sb2S3)0.7 glass with an ultra – violet nano-second laser

Czech Academy of Sciences Publication Activity Database

Knotek, P.; Návesník, J.; Černohorský, T.; Kincl, Miloslav; Vlček, Milan; Tichý, Ladislav

2015-01-01

Roč. 64, April (2015), s. 42-50 ISSN 0025-5408 Institutional support: RVO:61389013 Keywords : chalcogenides * glass * atomic force microscopy Subject RIV: CA - Inorganic Chemistry Impact factor: 2.435, year: 2015 http://www.sciencedirect.com/science/article/pii/S0025540814007843

Ultrafast Ge-Te bond dynamics in a phase-change superlattice

NARCIS (Netherlands)

Malvestuto, Marco; Caretta, Antonio; Casarin, Barbara; Cilento, Federico; Dell'Angela, Martina; Fausti, Daniele; Calarco, Raffaella; Kooi, Bart J.; Varesi, Enrico; Robertson, John; Parmigiani, Fulvio

2016-01-01

A long-standing question for avant-garde data storage technology concerns the nature of the ultrafast photoinduced phase transformations in the wide class of chalcogenide phase-change materials (PCMs). Overall, a comprehensive understanding of the microstructural evolution and the relevant kinetics

Thermoelectric properties of Ni – doped CuInTe2

Czech Academy of Sciences Publication Activity Database

Kucek, V.; Drašar, Č.; Navrátil, Jiří; Plecháček, T.; Beneš, L.

2015-01-01

Roč. 83, August (2015), s. 18-23 ISSN 0022-3697 Institutional support: RVO:61389013 Keywords : semiconductors * chalcogenides * X-ray diffraction Subject RIV: CA - Inorganic Chemistry Impact factor: 2.048, year: 2015 http://www.sciencedirect.com/science/article/pii/S0022369715000670

Atomistic simulation studies of iron sulphide, platinum antimonide and platinum arsenide

CSIR Research Space (South Africa)

Ngoepe, PE

2005-09-01

Full Text Available The authors present the results of atomistic simulations using derived interatomic potentials for the pyrite-structured metal chalcogenides FeS2, PtSb2 and PtAs2. Structural and elastic constants were calculated and compared with experimental...

Theory of Persistent, P-Type, Metallic Conduction in C-GeTe

National Research Council Canada - National Science Library

Edwards, Arthur H; Pineda, Andrew C; Schultz, Peter A; Martin, Marcus G; Thompson, Aidan P; Hjalmarson, Harold P

2005-01-01

.... However, it always displays p-type metallic conduction. This behavior is also observed in other chalcogenide materials, including Ge2Sb2Te5, commonly used for optically and electrically switched, non-volatile memory, and so is or great interest...

Thermochemical and structural characterization of GeSe2-Sb2Se3-ZnSe glasses

Czech Academy of Sciences Publication Activity Database

Ivanova, Z.; Černošková, Eva; Vassilev, V. S.; Boycheva, S. V.

2003-01-01

Roč. 57, č. 5-6 (2003), s. 1025-1028 ISSN 0167-577X R&D Projects: GA ČR GA203/99/0046 Keywords : chalcogenide glasses * microstucture * physicochemical properties Subject RIV: CA - Inorganic Chemistry Impact factor: 0.774, year: 2003

First principles calculations of structural, electronic and thermal ...

Indian Academy of Sciences (India)

Administrator

2013-07-28

Jul 28, 2013 ... The structural, electronic and thermal properties of lead chalcogenides PbS, PbSe and BeTe using .... results for all the systems are presented in table 1, along ... as interatomic bonding, equations of state and phonon spectra.

Size-dependent and tunable crystallization of GeSbTe phasechange nanoparticles

NARCIS (Netherlands)

Chen, Bin; ten Brink, Gerrit; Palasantzas, Georgios; Kooi, Bart

2016-01-01

Chalcogenide-based nanostructured phase-change materials (PCMs) are considered promising building blocks for non-volatile memory due to their high write and read speeds, high data-storage density, and low power consumption. Top-down fabrication of PCM nanoparticles (NPs), however, often results in

INFLUENCE OF COMPLEXING AGENT (Na2EDTA) ON CHEMICAL ...

African Journals Online (AJOL)

Preferred Customer

The structural, morphological and optical properties of the deposited films have ... chalcogenides form a large family of compounds such as Cu2SnS3, .... The atomic force microscopy images of the Cu4SnS4 thin films deposited at different.

The function of buffer layer in resistive switching device.

Czech Academy of Sciences Publication Activity Database

Zhang, B.; Prokop, V.; Střižík, L.; Zima, Vítězslav; Kutálek, P.; Vlček, Milan; Wágner, T.

2017-01-01

Roč. 14, č. 8 (2017), s. 291-295 ISSN 1584-8663 Institutional support: RVO:61389013 Keywords : resistive switching * chalcogenide glasses * buffer layer Subject RIV: CA - Inorganic Chemistry Impact factor: 0.732, year: 2016 http://www.chalcogen.ro/291_ZhangB.pdf

PbSe Nanorod Field-Effect Transistors : Room- and Low-Temperature Performance

NARCIS (Netherlands)

Han, Lu; Balazs, Daniel M.; Shulga, Artem G.; Abdu-Aguye, Mustapha; Ma, Wanli; Loi, Maria Antonietta

Lead chalcogenides with large exciton Bohr radius display strong quantum confinement, which make them applicable in a wide range of optoelectronic devices such as solar cells and photodetectors. Especially, 1D PbSe nanocrystals attract much attention with their potential for multiple exciton

Spectral-temporal composition matters when cascading supercontinua into the mid-infrared

DEFF Research Database (Denmark)

Petersen, Christian Rosenberg; Moselund, Peter M.; Petersen, Christian

2016-01-01

Supercontinuum generation in chalcogenide fibers is a promising technology for broadband spatially coherent sources in the mid-infrared, but it suffers from discouraging commercial prospects, mainly due to a lack of suitable pump lasers. Here, a promising approach is experimentally demonstrated u...

Asymmetric supercapacitors with metal-like ternary selenides and porous graphene electrodes

KAUST Repository

Xia, Chuan; Jiang, Qiu; Zhao, Chao; Beaujuge, Pierre; Alshareef, Husam N.

2016-01-01

nanostructured ternary nickel cobalt selenides result in a much higher areal capacitance (2.33 F cm−2 at 4 mA cm−2), better rate performance and cycling stability than their binary selenide equivalents, and other ternary oxides and chalcogenides. Those hybrid

Ag2S deposited on oxidized polypropylene as composite material for solar light absorption

NARCIS (Netherlands)

Krylovaa, V.; Milbrat, Alexander; Embrachts, A.; Baltrusaitis, Jonas

2014-01-01

Thin film metal chalcogenides are superior solar light absorbers and can be combined into a functional material when deposited on polymeric substrates. Ag2S composite materials were synthesized on oxidized polypropylene using chemical bath deposition method and their properties were explored using

R-ES-ONANCE

Indian Academy of Sciences (India)

G MR in the read heads of computer discs was developed by IBM in 1997, using .... tion of a magnetic field to the Eu-chalcogenide film pro- vides spin ... ingredient in quantum computing. .... transistor. A con~eptual diagram of this transistor is.

Reversible amorphous-crystalline phase changes in a wide range of Se1-xTex alloys studied using ultrafast differential scanning calorimetry

NARCIS (Netherlands)

Vermeulen, Paul. A.; Momand, Jamo; Kooi, Bart J.

The reversible amorphous-crystalline phase change in a chalcogenide material, specifically the Se1-xTex alloy, has been investigated for the first time using ultrafast differential scanning calorimetry. Heating rates and cooling rates up to 5000 K/s were used. Repeated reversible

Importance of non-parabolic band effects in the thermoelectric properties of semiconductors

Science.gov (United States)

Chen, Xin; Parker, David; Singh, David J.

2013-01-01

We present an analysis of the thermoelectric properties of of n-type GeTe and SnTe in relation to the lead chalcogenides PbTe and PbSe. We find that the singly degenerate conduction bands of semiconducting GeTe and SnTe are highly non-ellipsoidal, even very close to the band edges. This leads to isoenergy surfaces with a strongly corrugated shape that is clearly evident at carrier concentrations well below 0.005 e per formula unit (7–9 × 1019 cm−3 depending on material). Analysis within Boltzmann theory suggests that this corrugation may be favorable for the thermoelectric transport. Our calculations also indicate that values of the power factor for these two materials may well exceed those of PbTe and PbSe. As a result these materials may exhibit n-type performance exceeding that of the lead chalcogenides. PMID:24196778

Ultrafast Ge-Te bond dynamics in a phase-change superlattice

Science.gov (United States)

Malvestuto, Marco; Caretta, Antonio; Casarin, Barbara; Cilento, Federico; Dell'Angela, Martina; Fausti, Daniele; Calarco, Raffaella; Kooi, Bart J.; Varesi, Enrico; Robertson, John; Parmigiani, Fulvio

2016-09-01

A long-standing question for avant-garde data storage technology concerns the nature of the ultrafast photoinduced phase transformations in the wide class of chalcogenide phase-change materials (PCMs). Overall, a comprehensive understanding of the microstructural evolution and the relevant kinetics mechanisms accompanying the out-of-equilibrium phases is still missing. Here, after overheating a phase-change chalcogenide superlattice by an ultrafast laser pulse, we indirectly track the lattice relaxation by time resolved x-ray absorption spectroscopy (tr-XAS) with a sub-ns time resolution. The approach to the tr-XAS experimental results reported in this work provides an atomistic insight of the mechanism that takes place during the cooling process; meanwhile a first-principles model mimicking the microscopic distortions accounts for a straightforward representation of the observed dynamics. Finally, we envisage that our approach can be applied in future studies addressing the role of dynamical structural strain in PCMs.

Electronic location and magnetism in uranium and neptunium mono-chalcogenides and mono-pnictides, study of the systems: U_xLa_1_-_x(S,Se), U_0_._2(La_0_._1_5Y_0_._8_5)_0_._8Te and NpAs_1_-_xSe_x

International Nuclear Information System (INIS)

Bombardi, Alessandro

2001-03-01

This thesis concerns the evolution of the magnetic properties in some solid solutions (U_xLa_1_-_x(S,Se), U_0_._2(La_0_._1_5Y_0_._8_5)_0_._8Te, NpAs_1_-_XSe_x) based on Uranium and Neptunium. This experimental study is an attempt to improve the comprehension of the behavior of the 5f electrons, which are generally considered as responsibles for the physical properties observed in these systems, when a modification 'under control' of their chemical environment occurs. The first part of this thesis is devoted to the study of the effect of the reduction of the density of the magnetic centers (substitution U → La) on some physical properties, mainly magnetic, of the U mono-chalcogenide systems. The ferromagnetic long-range ordering observed in US and USe abruptly collapses at a critical U concentration far above the percolation limit, whereas short-range ferromagnetic correlations are measured well below this critical concentration. Magnetic form factor and X-ray magnetic circular dichroism measurements were performed to relate experimentally the change observed in the macroscopic properties of the materials to the electronic structure. The second part is devoted to the study of the evolution of the magnetic structures in the NpAs_1_-_xSe_x system. In this case a p electron is added, presumably to the conduction band, thus modifying the chemical potential. The magnetic phase diagram up to a Se concentration of 20%, as determined by neutron diffraction, magnetization measurements, and Moessbauer spectroscopy is reported. (author) [fr

Optical waveguide based on amorphous Er{sup 3+}-doped Ga-Ge-Sb-S(Se) pulsed laser deposited thin films

Energy Technology Data Exchange (ETDEWEB)

Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.f [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Nemec, P. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Jurdyc, A.M [Laboratoire de Physico-Chimie des Materiaux Luminescents (LPCML), UMR CNRS 5620, Universite Claude Bernard-Lyon 1, Villeurbanne (France); Zhang, S.; Charpentier, F. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Lhermite, H. [IETR-Microelectronique, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Charrier, J. [FOTON, UMR 6082-ENSSAT, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Guin, J.P. [LARMAUR, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Frumar, M. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Adam, J.-L. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France)

2010-06-30

Amorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits due to their potential functionality in near infrared (IR) and mid-IR spectral regions. More specifically, the photoluminescence of rare earth ions in amorphous chalcogenide films can be used in laser and amplifier devices in the IR spectral domain. The aim of the present investigation was to optimize the deposition conditions for the fabrication of undoped and Er{sup 3+} doped sulphide and selenide thin films with nominal composition Ga{sub 5}Ge{sub 20}Sb{sub 10}S(Se){sub 65} or Ga{sub 5}Ge{sub 23}Sb{sub 5}S{sub 67} by pulsed laser deposition (PLD). The study of compositional, morphological and structural characteristics of the layers was realized by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy and Raman spectroscopy analyses, respectively. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and optical losses were investigated as well. The clear identification of near-IR photoluminescence of Er{sup 3+} ions was obtained for both selenide and sulphide films. The decay of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition at 1.54 {mu}m in Er{sup 3+} doped Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} PLD sulphide films was studied to assess the effects of film thickness, rare earth concentration and multilayer PLD deposition on their spectroscopic properties.

Amorphous Semiconductors Characteristics and Their Modern Application

International Nuclear Information System (INIS)

Elshazly, A.A.

2013-01-01

Chalcogenide glasses are a recognized group of inorganic glassy materials which always contain one or more of the chalcogenide elements S, Se or Te but not O, in conjunction with more electro positive elements as As, Sb, etc. Chalcogenide glasses are generally less robust, more weakly bonded materials than oxide glasses. Glasses were prepared from Sb, Se, Bi and In elements with purity 99.999%. These glasses are reactive at high temperature with oxygen. Therefore, synthesis was accomplished in evacuated clean silica tubes. The tubes were washed by distilled water, and then dried in a furnace whose temperature was about 100 degree C . The weighted materials were introduced into the cleaned silica tubes and then evacuated to about 10-4 torr and sealed. The sealed tubes were placed inside the furnace and the temperature of the furnace was raised gradually up to 90 C within 1 hour and kept constant for 10 hours. Moreover, shaking of the constituent materials inside the tube in the furnace was necessary for realizing the homogeneity of the composition. After synthesis, the tube was quenched into ice water. The glassy ingots could be obtained by drastic quenching. Then materials were removed from the tubes and kept in dry atmosphere. The proper ingot was confirmed to be completely amorphous using x-ray diffraction and differential thermal analysis. Thin films of the selected compositions were prepared by thermal evaporation technique under vacuum 10-4 torr with constant thickness 100 nm. The effect of radiation, optical and some other effects on composition were studied.

A study on molybdenum sulphoselenide (MoSxSe2−x, 0 ≤ x ≤ 2) thin films: Growth from solution and its properties

International Nuclear Information System (INIS)

Anand, T. Joseph Sahaya; Shariza, S.

2012-01-01

Highlights: ► Effect of deposition time on the properties of molybdenum chalcogenide thin films. ► First time to compare the study of binary and ternary molybdenum chalcogenides. ► No previous report on ternary molybdenum sulphoselenide by electrodeposition. ► Semiconducting parameters by CV analysis promising to be good solar cell material. - Abstract: Thin films of molybdenum sulphoselenide, MoS x Se 2−x , (0 ≤ x ≤ 2) have been electrosynthesized on indium-tin-oxide (ITO)-coated glass and stainless steel substrates. The films were characterized for their structural, morphological and compositional characteristics. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC)/solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals the films were adherent to the substrate with uniform in nature which also confirmed by Transmission electron microscope (TEM). Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Mo, S and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott–Schottky plots indicates that the films obtained are of n-type material. For all films, the semiconductor parameter values come in the better range of other transition metal chalcogenides which has proven that MoSSe thin films are capable as solar/PEC cell materials.

Pramana – Journal of Physics | Indian Academy of Sciences

Indian Academy of Sciences (India)

Electronic switching in amorphous chalcogenide semiconductors has been observed and studied for nearly forty years. Technological exploitation of this phenomenon has most recently emerged in DVD's where GST, a compound of germanium, antimony, and tellurium, is used to store information. We explain how GST ...

Laser induced changes of As.sub.50./sub.Se.sub.50./sub. nanolayers studied by synchrotron radiation photoelectron spectroscopy

Czech Academy of Sciences Publication Activity Database

Kondrat, O.; Popovich, N.; Holomb, R.; Mitsa, V.; Lyamayev, V.; Tsud, N.; Cháb, Vladimír; Matolín, V.; Prince, K. C.

2012-01-01

Roč. 520, č. 24 (2012), s. 7224-7229 ISSN 0040-6090 R&D Projects: GA MŠk(CZ) LC06058 Institutional support: RVO:68378271 Keywords : chalcogenide glass * photostructural changes * photoelectron spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.604, year: 2012

Towards supercontinuum-driven hyperspectral microscopy in the mid-infrared

DEFF Research Database (Denmark)

Lindsay, I. D.; Valle, S.; Ward, J.

2016-01-01

The extension of supercontinuum (SC) sources into the mid-infrared, via the use of fluoride and chalcogenide optical fibers, potentially offers the high radiance of a laser combined with spectral coverage far exceeding that of typical tunable lasers and comparable to traditional black-body emitte...

Synthesis and Characterization of Novel Quaternary Thioaluminogermanates

KAUST Repository

Al-Bloushi, Mohammed

2013-01-01

compounds of the type “M(AlS2)(GeS2)” (M = Na and K) are new metal-chalcogenides, synthesized by the classical solid state approach. The characterization of these compounds was carried out by Scanning Electron Microscopy (SEM), Energy Dispersive X

Pramana – Journal of Physics | Indian Academy of Sciences

Indian Academy of Sciences (India)

Keywords. Thallium chalcogenides; crystalline solids; electrical conduction; photosensitivity. Abstract. The Tl2S compound was prepared in a single crystal form using a special local technique, and the obtained crystals were analysed by X-ray diffraction. For the resultant crystals, the electrical properties (electrical ...

Thermoelectric Properties of TI – Doped SnSe: A Hint of Phononic Structure

Czech Academy of Sciences Publication Activity Database

Kucek, V.; Plecháček, T.; Janíček, P.; Ruleová, P.; Beneš, L.; Navrátil, Jiří; Drašar, Č.

2016-01-01

Roč. 45, č. 6 (2016), s. 2943-2949 ISSN 0361-5235 R&D Projects: GA ČR(CZ) GA16-07711S Institutional support: RVO:61389013 Keywords : semiconductors * chalcogenides * X-ray diffraction Subject RIV: CA - Inorganic Chemistry Impact factor: 1.579, year: 2016

Growth Mechanism of Nanowires: Ternary Chalcogenides

Science.gov (United States)

Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

2016-01-01

In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

Chemical Routes to Colloidal Chalcogenide Nanosheets

Energy Technology Data Exchange (ETDEWEB)

Schaak, Raymond E. [Pennsylvania State Univ., University Park, PA (United States)

2014-11-25

This project began with an emphasis on developing new low-­temperature synthetic routes to intermetallic alloys in order to advance the synthesis and processing science of superconducting materials, as well as to potentially discover new materials that would be inaccessible using more traditional higher-­temperature methods. Our initial target materials, chosen as model systems for developing new low-­temperature solution-­based synthetic platforms, were based on well known superconducting alloys, including Nb₃M (M = Ga, Ge, Sn), Bi-­M (M = In, Cu), and MgCNi₃. Several key, fundamental synthetic challenges that underpinned the formation of these materials using solution chemistry routes were identified and investigated.

Superconductivity in lanthanum chalcogenides under pressure

International Nuclear Information System (INIS)

Eiling, A.

1981-01-01

In this thesis the pressure dependence of the superconducting transition temperature of La 3 S 4 , La 3 Se 4 , La 3 Te 4 , La 2 Se 2 S 2 , and La 2 Sesub(3,6) Tesub(0,4) is investigated up to 4,5 GPa. A pressure cell is reported which allows also the measurement of the magnetic susceptibility under pressure. The calculated density of states describe the increase of the critical temperature very well in the frame of Mc Millans equation. (TWO)

Ultrabroadband terahertz spectroscopy of chalcogenide glasses

DEFF Research Database (Denmark)

Zalkovskij, Maksim; Bisgaard, Christer Zoffmann; Novitsky, Andrey

2012-01-01

and absorption coefficient is found for both glasses. We observe the breakdown of the universal power-law dependence of the absorption coefficient due to atomic vibrations observed at low THz frequencies in disordered materials, and see the transition to localized vibrational dynamics for the As2S3 compound...

Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films

Czech Academy of Sciences Publication Activity Database

Reddy, N.K.; Devika, M.; Prashantha, M.; Rames, K.; Ivanova, Z.G.; Zavadil, Jiří

2013-01-01

Roč. 15, 3-4 (2013), s. 182-186 ISSN 1454-4164 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985882 Keywords : Chalcogenide thin films * Optical properties * Photoinduced changes Subject RIV: JA - Electronics ; Optoelectronics , Electrical Engineering Impact factor: 0.563, year: 2013

Formation of colloidal copper indium sulfide nanosheets by two-dimensional self-organization

NARCIS (Netherlands)

Berends, A.C.|info:eu-repo/dai/nl/411263986; Meeldijk, J.D.|info:eu-repo/dai/nl/323921647; van Huis, M.A.|info:eu-repo/dai/nl/304097586; de Mello-Donega, C.|info:eu-repo/dai/nl/125593899

2017-01-01

Colloidal 2D semiconductor nanosheets (NSs) are an interesting new class of materials due to their unique properties. However, synthesis of these NSs is challenging and synthesis procedures for materials other than the well-known Pb- and Cd- chalcogenides are still underdeveloped. In this paper, we

Doped SbTe phase change material in memory cells

NARCIS (Netherlands)

in ‘t Zandt, M.A.A.; Jedema, F.J.; Gravesteijn, Dirk J; Gravesteijn, D.J.; Attenborough, K.; Wolters, Robertus A.M.

2009-01-01

Phase Change Random Access Memory (PCRAM) is investigated as replacement for Flash. The memory concept is based on switching a chalcogenide from the crystalline (low ohmic) to the amorphous (high ohmic) state and vice versa. Basically two memory cell concepts exist: the Ovonic Unified Memory (OUM)

Positron annihilation lifetime study of extended defects in semiconductor glasses and polymers

Energy Technology Data Exchange (ETDEWEB)

Boyko, Olha [Department of Pediatric Dentistry, Danylo Halytsky Lviv National Medical University, Pekarska str. 69, 79010 Lviv (Ukraine); Shpotyuk, Yaroslav [Department of Optoelectronics and Information Technologies, Ivan Franko National University of Lviv, Dragomanova str. 50, 79005 Lviv (Ukraine); Lviv Scientific Research Institute of Materials, Scientific Research Company ' ' Carat' ' , Stryjska str. 202, 79031 Lviv (Ukraine); Filipecki, Jacek [Institute of Physics, Jan Dlugosz University in Czestochowa, Armii Krajowej al. 13/15, 42200 Czestochowa (Poland)

2013-01-15

The processes of atomic shrinkage in network-forming solids initiated by external influences are tested using technique of positron annihilation lifetime spectroscopy at the example of chalcogenide vitreous semiconductors of arsenic sulphide type and acrylic polymers for dental application. Two state positron trapping is shown to be responsible for atomic shrinkage in chalcogenide glasses, while mixed trapping and ortho-positronium decaying is character for volumetric densification and stress propagation in acrylic dental polymers. At the basis of the obtained results it is concluded that correct analysis of externally-induced shrinkage in polymer networks under consideration can be developed by using original positron lifetime data treatment algorithms to compensate defect-free bulk annihilation channel within two-state positron trapping model and account for an interbalance between simultaneously co-existing positron trapping and orth-positronium related decaying channels within mixed three-state positron annihilation model (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Positron annihilation lifetime study of extended defects in semiconductor glasses and polymers

International Nuclear Information System (INIS)

Boyko, Olha; Shpotyuk, Yaroslav; Filipecki, Jacek

2013-01-01

The processes of atomic shrinkage in network-forming solids initiated by external influences are tested using technique of positron annihilation lifetime spectroscopy at the example of chalcogenide vitreous semiconductors of arsenic sulphide type and acrylic polymers for dental application. Two state positron trapping is shown to be responsible for atomic shrinkage in chalcogenide glasses, while mixed trapping and ortho-positronium decaying is character for volumetric densification and stress propagation in acrylic dental polymers. At the basis of the obtained results it is concluded that correct analysis of externally-induced shrinkage in polymer networks under consideration can be developed by using original positron lifetime data treatment algorithms to compensate defect-free bulk annihilation channel within two-state positron trapping model and account for an interbalance between simultaneously co-existing positron trapping and orth-positronium related decaying channels within mixed three-state positron annihilation model (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Magnetic properties and crystal field effects in TlLnX2 compounds (X=S, Se, Te)

International Nuclear Information System (INIS)

Duczmal, M.; Pawlak, L.

1997-01-01

Ternary thallium lanthanide chalcogenides TlLnX 2 (X=S, Se or Te) crystallize in the α-NaFeO 2 type of structure (R anti 3m). Each kind of the metal ions, surrounded by the distorted chalcogenide octahedra, forms separate layers. The TlX 6 octahedra are strongly elongated and the LnX 6 octahedra slightly shrunk along the threefold axis. The deformations of the coordination polyhedra and the cell volumes change regularly with the lanthanide ionic radii. The difference between the experimental and the calculated M-X distances increases on going from sulphides to tellurides, as a result of the growing covalent character of the bonds. The crystal field parameters were estimated from the high field magnetization (0-14 T) assuming trigonal distortion of the octahedral symmetry of LnX 6 polyhedra. The second-order crystal field parameters were found to correlate with the deformation of the lanthanide ions' environments. No magnetic transition was observed down to 4.2 K. (orig.)

Linking rigidity transitions with enthalpic changes at the glass transition and fragility: insight from a simple oscillator model.

Science.gov (United States)

Micoulaut, Matthieu

2010-07-21

A low temperature Monte Carlo dynamics of a Keating-like oscillator model is used to study the relationship between the nature of network glasses from the viewpoint of rigidity, the thermal reversibility during the glass transition and the strong-fragile behaviour of glass-forming liquids. The model shows that a Phillips optimal glass formation with minimal enthalpic changes is obtained under a cooling/annealing cycle when the system is optimally constrained by the harmonic interactions, i.e. when it is isostatically rigid. For these peculiar systems with a nearly reversible glass transition, the computed activation energy for relaxation time shows also a minimum, which demonstrates that isostatically rigid glasses are strong (Arrhenius-like) glass-forming liquids. Experiments on chalcogenide and oxide glass-forming liquids are discussed under this new perspective and confirm the theoretical prediction for chalcogenide network glasses whereas limitations of the approach appear for weakly interacting (non-covalent, ionic) systems.

Unexpected Ge-Ge contacts in the two-dimensional Ge{sub 4}Se{sub 3}Te phase and analysis of their chemical cause with the density of energy (DOE) function

Energy Technology Data Exchange (ETDEWEB)

Kuepers, Michael; Konze, Philipp M.; Maintz, Stefan; Steinberg, Simon [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Mio, Antonio M.; Cojocaru-Miredin, Oana; Zhu, Min; Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University (Germany); Mueller, Merlin; Mayer, Joachim [Gemeinschaftslabor fuer Elektronenmikroskopie, RWTH Aachen University (Germany); Luysberg, Martina [Ernst-Ruska-Center, Forschungszentrum Juelich GmbH (Germany); Dronskowski, Richard [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Juelich-Aachen Research Alliance (JARA-HPC), RWTH Aachen University (Germany)

2017-08-14

A hexagonal phase in the ternary Ge-Se-Te system with an approximate composition of GeSe{sub 0.75}Te{sub 0.25} has been known since the 1960s but its structure has remained unknown. We have succeeded in growing single crystals by chemical transport as a prerequisite to solve and refine the Ge{sub 4}Se{sub 3}Te structure. It consists of layers that are held together by van der Waals type weak chalcogenide-chalcogenide interactions but also display unexpected Ge-Ge contacts, as confirmed by electron microscopy analysis. The nature of the electronic structure of Ge{sub 4}Se{sub 3}Te was characterized by chemical bonding analysis, in particular by the newly introduced density of energy (DOE) function. The Ge-Ge bonding interactions serve to hold electrons that would otherwise go into antibonding Ge-Te contacts. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Measurement of the refractive index dispersion of As2Se3 bulk glass and thin films prior to and after laser irradiation and annealing using prism coupling in the near- and mid-infrared spectral range

International Nuclear Information System (INIS)

Carlie, N.; Petit, L.; Musgraves, J. D.; Richardson, K.; Anheier, N. C. Jr.; Qiao, H. A.; Bernacki, B.; Phillips, M. C.

2011-01-01

The prism coupling technique has been utilized to measure the refractive index in the near- and mid-IR spectral region of chalcogenide glasses in bulk and thin film form. A commercial system (Metricon model 2010) has been modified with additional laser sources, detectors, and a new GaP prism to allow the measurement of refractive index dispersion over the 1.5-10.6 μm range. The instrumental error was found to be ±0.001 refractive index units across the entire wavelength region examined. Measurements on thermally evaporated AMTIR2 thin films confirmed that (i) the film deposition process provides thin films with reduced index compared to that of the bulk glass used as a target, (ii) annealing of the films increases the refractive index of the film to the level of the bulk glass used as a target to create it, and (iii) it is possible to locally increase the refractive index of the chalcogenide glass using laser exposure at 632.8 nm.

Extension of Mediema's Macroscopic Atom Model to the Elements of Group 16 (O, S, Se, Te ,Po)

CERN Document Server

Neuhausen, J

2003-01-01

A consistent set of Miedema-parameters has been developed for the elements of the chalcogen group (Group 16 of the periodic table of the elements: 0, S, Se, Te, Po) from ab-initio quantum-mechanical calculations as weIl as empirical correlations. Using this parameter set thermochemical properties such as enthalpies of formation of solid metal chalcogenides, partial molar enthalpies of solution of chalcogens in liquid and solid metaIs, partial molar enthalpies of evaporation of the chalcogens from liquid metal solution into the monoatomic gaseous state, partial molar enthalpies of adsorption of chalcogenides on metal surfaces at zero coverage and partial molar enthalpies of segregation of the chalcogens in trace amounts within solid metal matrices have been calculated. These properties are compared with available experimental data and discussed with an emphasis on the periodic behaviour of the elements. The model calculations show that a description of the thermochemical properties of the chalcogens using the ...

Spectral staining of tumor tissue by fiber optic FTIR spectroscopy

Science.gov (United States)

Salzer, Reiner; Steiner, Gerald; Kano, Angelique; Richter, Tom; Bergmann, Ralf; Rodig, Heike; Johannsen, Bernd; Kobelke, Jens

2003-07-01

Infrared (IR) optical fiber have aroused great interest in recent years because of their potential in in-vivo spectroscopy. This potential includes the ability to be flexible, small and to guide IR light in a very large range of wavelengths. Two types - silver halide and chalcogenide - infrared transmitting fibers are investigated in the detection of a malignant tumor. As a test sample for all types of fibers we used a thin section of an entire rat brain with glioblastoma. The fibers were connected with a common infrared microscope. Maps across the whole tissue section with more than 200 spectra were recorded by moving the sample with an XY stage. Data evaluation was performed using fuzzy c-means cluster analysis (FCM). The silver halide fibers provided excellent results. The tumor was clearly discernible from healthy tissue. Chalcogenide fibers are not suitable to distinguish tumor from normal tissue because the fiber has a very low transmittance in the important fingerprint region.

Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

International Nuclear Information System (INIS)

Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

2015-01-01

Here, we report on the electrical characterization of phase change memory cells containing a Ge 3 Sb 2 Te 6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles

Transition from CZTSe to CZTS via multicomponent CZTSSe: Potential low cost photovoltaic absorbers

Science.gov (United States)

Chawla, Parul; Jain, Shefali; Vashishtha, Parth; Ahamed, Mansoor; Sharma, Shailesh Narain

2018-01-01

A quintessential perspective for elaborating the pivotal role of quinary chalogenides such as CZTSSe plunges the thrust for exploration of non-vacuum approach for development of multicomponent chalcogenides utilizing organic surfactants and solvents for the nanocrystals ideal for photovoltaic applications. The piece of study envisages employment of TOPO-TOP as capping agents-cum-solvents for the very first time and have not been reported for CZTSSe-based materials till date. The work has been forwarded with the variation of anionic ratios in pristine counterparts of CZTSSe; i.e. CZTSe and CZTS in order to envision the potential of quinary chalcogenides wherein properties of two different materials coalesce to impart improved characteristics in CZTSSe. Varying Se:S ratios gradually during nanocrystals' synthesis by high-temperature colloidal route ensued precise control over the phase formation and morphology. With the employment of these capping agents, as-synthesized nanocrystals' are inherently Se-rich and high crystallinity restrains the need for selenization and high temperature annnealing respectively.

Multilayer As{sub 2}Se{sub 3}/GeS{sub 2} quarter wave structures for photonic applications

Energy Technology Data Exchange (ETDEWEB)

Todorov, R; Tasseva, J; Babeva, Tz; Petkov, K, E-mail: rossen@clf.bas.b [Institute of Optical Materials and Technologies ' Acad. J. Malinowski' , Bulgarian Academy of Sciences, Acad. G. Bonchev Str., bl.109, 1113 Sofia (Bulgaria)

2010-12-22

The optical properties of single layers from As{sub 2}Se{sub 3} and GeS{sub 2}, double-layered stack and quarter-wave multilayer structure consisting of alternating layers from both materials are investigated. For modelling of multilayer coating the thickness dependence of the refractive index of single coatings from both materials is studied. The particularities and scope of application of different spectrophotometric methods for calculation of optical parameters of thin chalcogenide layers are discussed for film thickness, d, in the range {lambda}/25-1.5{lambda} ({lambda} being the operating wavelength). Having acquired the knowledge of optical parameters (refractive index, n, and extinction coefficient, k) of the single layers, we designed and produced a one-dimensional photonic crystal with fundamental reflection band at {lambda} = 850 nm. It was shown that the photoinduced changes of the refractive index of thin chalcogenide films can be used for enhancement of the optical contrast of both materials.

Mid-infrared materials and devices on a Si platform for optical sensing

Science.gov (United States)

Singh, Vivek; Lin, Pao Tai; Patel, Neil; Lin, Hongtao; Li, Lan; Zou, Yi; Deng, Fei; Ni, Chaoying; Hu, Juejun; Giammarco, James; Soliani, Anna Paola; Zdyrko, Bogdan; Luzinov, Igor; Novak, Spencer; Novak, Jackie; Wachtel, Peter; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kimerling, Lionel C; Agarwal, Anuradha M

2014-01-01

In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiNx waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors. PMID:27877641

AC conductivity and dielectric properties of amorphous GexSb40-xSe60 thin films

International Nuclear Information System (INIS)

Atyia, H.E.; Farid, A.M.; Hegab, N.A.

2008-01-01

Measurements of AC conductivity and dielectric properties have been made for chalcogenide film samples of Ge x Sb 40-x Se 60 (with x=0, 10 and 20 at%) at different temperatures (303-393 K) and various frequencies (10 2 -10 5 Hz). It was found that the AC conductivity obeys the law σ(ω, T)=Aω s . The exponent s 1 and dielectric loss ε 2 were found to decrease with frequency and increase with temperature. The maximum barrier height W M was calculated from dielectric measurements according to the Guintini equation. It was found that the obtained value of W m agrees with that proposed by the theory of hopping of charge carriers over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states N(E F ) has also been calculated for the studied compositions. The effect of decreasing the Sb content at the expense of the Ge content was investigated for the obtained results of the studied parameters

Electrical performance of phase change memory cells with Ge{sub 3}Sb{sub 2}Te{sub 6} deposited by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Boniardi, Mattia; Redaelli, Andrea [Micron Semiconductor Italia S.r.l., Via C. Olivetti, 2, 20864, Agrate Brianza, MB (Italy)

2015-01-12

Here, we report on the electrical characterization of phase change memory cells containing a Ge{sub 3}Sb{sub 2}Te{sub 6} (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles.

Kanishka Biswas

Indian Academy of Sciences (India)

Kanishka Biswas

(Solid state inorganic chemistry). (Metal chalcogenide chemistry). Manoj K. Jana. Satya N. Guin. Ananya Banik. Subhajit. Roychowdhury. Manisha Samanta Ekashmi. Rathore. Sujoy Saha. Thermoelectrics. Guin et al. Energy Environ. Sci., 2013, 6, 2603. Guin et al. J. Mater. Chem. A 2014, 2, 4324. Guin, et al. J. Am. Chem.

Sulfide, selenide and telluride glassy systems for optoelectronic applications

Czech Academy of Sciences Publication Activity Database

Ležal, Dimitrij; Zavadil, Jiří; Procházka, M.

2005-01-01

Roč. 7, č. 5 (2005), 2281-2291 ISSN 1454-4164 R&D Projects: GA ČR(CZ) GA104/05/0878 Institutional research plan: CEZ:AV0Z20670512 Keywords : transmission * fluorescence spectroscopy * chalcogenide glasses * optical properties Subject RIV: CA - Inorganic Chemistry Impact factor: 1.138, year: 2005

Infrared photonic bandgap materials and structures

Science.gov (United States)

Sundaram, S. K.; Keller, P. E.; Riley, B. J.; Martinez, J. E.; Johnson, B. R.; Allen, P. J.; Saraf, L. V.; Anheier, N. C., Jr.; Liau, F.

2006-02-01

Three-dimensional periodic dielectric structure can be described by band theory, analogous to electron waves in a crystal. Photonic band gap (PBG) structures were introduced in 1987. The PBG is an energy band in which optical modes, spontaneous emission, and zero-point fluctuations are all absent. It was first theoretically predicted that a three-dimensional photonic crystal could have a complete band gap. E. Yablonovitch built the first three-dimensional photonic crystal (Yablonovite) on microwave length scale, with a complete PBG. In nature, photonic crystals occur as semiprecious opal and the microscopic structures on the wings of some tropical butterflies, which are repeating structures (PBG structure/materials) that inhibit the propagation of some frequencies of light. Pacific Northwest National Laboratory (PNNL) has been developing tunable (between 3.5 and 16 μm) quantum cascade lasers (QCL), chalcogenides, and all other components for an integrated approach to chemical sensing. We have made significant progress in modeling and fabrication of infrared photonic band gap (PBG) materials and structures. We modeled several 2-D designs and defect configurations. Transmission spectra were computed by the Finite Difference Time Domain Method (with FullWAVE TM). The band gaps were computed by the Plane Wave Expansion Method (with BandSOLVE TM). The modeled designs and defects were compared and the best design was identified. On the experimental front, chalcogenide glasses were used as the starting materials. As IIS 3, a common chalcogenide, is an important infrared (IR) transparent material with a variety of potential applications such as IR sensors, waveguides, and photonic crystals. Wet-chemical lithography has been extended to PBG fabrication and challenges identified. An overview of results and challenges will be presented.

Rings, chains and planes: Variation of Tg with composition in ...

Indian Academy of Sciences (India)

We propose a microscopic, phenomenological model for the decrease in the viscosity observed at glass transition. Our model is primarily applicable to chalcogenide glasses. According to this model, the decrease in the viscosity at glass transition is mainly due to the breaking of the Van der Waals bonds in the ...

Coherent multi-octave spanning supercontinuum in tapered sulphide fibres

DEFF Research Database (Denmark)

Kubat, Irnis; Mägi, Eric; Hu, Tomonori

A novel frequency comb design is proposed based on a newly developed ultrafast 3µm mid-infrared laser in conjunction with micro-taper chalcogenide fibre. The novel design allows for an all-fibre laser source yielding up to three octave coherent supercontinuum. The design is the first step in real...

Preparation and physical properties of luminescent 80GeSe(2) center dot (20-x)Sb2Se3 center dot xSb(2)Te(y):Pr2Se3 glasses; x=0, 1, 3, 10; y=2, 3, 4

Czech Academy of Sciences Publication Activity Database

Frumarová, Božena; Frumar, M.; Oswald, Jiří; Kincl, Miloslav; Parchanski, V.

2013-01-01

Roč. 134, Feb 2013 (2013), s. 558-565 ISSN 0022-2313 R&D Projects: GA MŠk(CZ) LH11101; GA ČR GA203/09/0827 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : chalcogenide glasses * MID IR luminescence Subject RIV: CA - Inorganic Chemistry Impact factor: 2.367, year: 2013

Enhanced thermoelectric performance of n-type Bi2O2Se ceramics induced by Ge doping

Czech Academy of Sciences Publication Activity Database

Ruleová, P.; Plecháček, T.; Kašparová, J.; Vlček, Milan; Beneš, L.; Lostak, P.; Drašar, Č.

2018-01-01

Roč. 47, č. 2 (2018), s. 1459-1466 ISSN 0361-5235 R&D Projects: GA ČR(CZ) GA16-07711S Institutional support: RVO:61389013 Keywords : semiconductors * chalcogenides * x-ray diffraction Subject RIV: CA - Inorganic Chemistry OBOR OECD: Inorganic and nuclear chemistry Impact factor: 1.579, year: 2016

Fiber optic lasers with emission to the region 2-3 μm of IR medium

International Nuclear Information System (INIS)

Anzuelo Sanchez, G.; Osuna Galan, I.; Camas Anzueto, J.; Martinez Rios, A.; Selvas Aguilar, R.

2009-01-01

We present recent advances in laser emission in the 2-2-5 μm mid-IR, using a chalcogenide fiber with low loss and a high Raman gain in the region 2-10 μm. We present a review of fiber lasers operating in 2-3 μm of the mid IR. (Author)

Local atomic structure and electrical properties of Ge(20)Se(80-x)Te(x) (x=0, 5, 10, and 15) glasses doped with Ho

Czech Academy of Sciences Publication Activity Database

Kubliha, M.; Kostka, Petr; Trnovcová, V.; Zavadil, Jiří; Bednarčík, J.; Labas, V.; Pedlíková, Jitka; Dippel, A.C.; Liermann, H.P.; Psota, J.

2014-01-01

Roč. 586, FEB 15 (2014), s. 308-313 ISSN 0925-8388 R&D Projects: GA ČR GAP106/12/2384 Institutional support: RVO:67985891 ; RVO:67985882 Keywords : chalcogenide glasses * crystal phase * electrical and dielectric properties * structure Subject RIV: JH - Ceramics, Fire-Resistant Materials and Glass Impact factor: 2.999, year: 2014

Photoexcitation-induced processes in amorphous semiconductors

Energy Technology Data Exchange (ETDEWEB)

Singh, Jai [School of Engineering and Logistics, Charles Darwin University, Darwin, NT 0909 (Australia)]. E-mail: jai.singh@cdu.edu.au

2005-07-30

Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories.

Pramana – Journal of Physics | Indian Academy of Sciences

Indian Academy of Sciences (India)

Soft chemistry has emerged as an important means of generating nanocrystals, nanowires and other nanostructures of semiconducting materials. We describe the synthesis of CdS and other metal chalcogenide nanocrystals by a solvothermal route. We also describe the synthesis of nanocrystals of AlN, GaN and InN by the ...

Fabrication of free-standing replicas of fragile, laminar, chitinous biotemplates

Energy Technology Data Exchange (ETDEWEB)

Lakhtakia, Akhlesh; Motyka, Michael A [Materials Research Institute and Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802 (United States); MartIn-Palma, Raul J; Pantano, Carlo G [Materials Research Institute and Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)], E-mail: akhlesh@psu.edu

2009-09-01

The conformal-evaporated-film-by-rotation technique, followed by the dissolution of chitin in an aqueous solution of orthophosphoric acid, can be used to fabricate free-standing replicas of fragile, laminar, chitinous biotemplates. This novel approach was demonstrated using butterfly wings as biotemplates and GeSeSb chalcogenide glass for replicas. (communication)

Fabrication of free-standing replicas of fragile, laminar, chitinous biotemplates

International Nuclear Information System (INIS)

Lakhtakia, Akhlesh; Motyka, Michael A; MartIn-Palma, Raul J; Pantano, Carlo G

2009-01-01

The conformal-evaporated-film-by-rotation technique, followed by the dissolution of chitin in an aqueous solution of orthophosphoric acid, can be used to fabricate free-standing replicas of fragile, laminar, chitinous biotemplates. This novel approach was demonstrated using butterfly wings as biotemplates and GeSeSb chalcogenide glass for replicas. (communication)

Photoexcitation-induced processes in amorphous semiconductors

International Nuclear Information System (INIS)

Singh, Jai

2005-01-01

Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories

In situ EXAFS study of Ru-containing electrocatalysts of oxygen reduction

International Nuclear Information System (INIS)

Malakhov, I.V.; Nikitenko, S.G.; Savinova, E.R.; Kochubey, D.I.; Alonso-Vante, N.

2000-01-01

The series of Ru chalcogenide compounds is obtained by varying the nature of the chalcogen with the transition metal (Ru) matrix. The EXAFS technique reveals that the electrocatalytic centre is Ru in a cluster matrix. Furthermore, a reversible change in the structure of the active centre as a function of the applied electrode potential appears

Semiconductor quantum dots: synthesis and water-solubilization for biomedical applications.

Science.gov (United States)

Yu, William W

2008-10-01

Quantum dots (QDs) are generally nanosized inorganic particles. They have distinctive size-dependent optical properties due to their very small size (mostly semiconductor QDs (mainly metal-chalcogenide compounds) and forming biocompatible structures for biomedical applications are discussed in this paper. This information may facilitate the research to create new materials/technologies for future clinical applications.

Rigorous treatment of the non-ohmic d.c. conductivity due to phonon-assisted tunneling from localized to extended states

International Nuclear Information System (INIS)

Majernikova, E.

1984-03-01

A quantitative treatment of the non-ohmic current response due to delocalization of shallow localized electrons in a model of a disordered solid is given. A phonon-assisted tunneling in electric field from shallow localized to extended states is confirmed as a mechanism leading to the dependence which was experimentally found for chalcogenide glasses. (author)

Use of ionic liquids in synthesis of nanocrystals, nanorods and ...

Indian Academy of Sciences (India)

TECS

chalcogen powder (Se and Te) and NaBH4 in imidazolium[BMIM]-based ionic liquids as solvents at 180–200°C. Nanorods and nanowires of Se and Te ... such as elemental chalcogens and metal chalcogenides. Nanoparticles of Rh and Ir have been ... Single crystalline Te nanotubes have been synthesized by the polyol ...

First principles calculations of structural, electronic and thermal ...

Indian Academy of Sciences (India)

Home; Journals; Bulletin of Materials Science; Volume 37; Issue 5. First principles calculations of structural, electronic and thermal properties of lead chalcogenides PbS, PbSe and PbTe compounds. N Boukhris H Meradji S Amara Korba S Drablia S Ghemid F El Haj Hassan. Volume 37 Issue 5 August 2014 pp 1159-1166 ...

Enhanced Selectivity and Uptake Capacity of CO2 and Toluene Adsorption in Co0.5 M0.33 MoS4 (M= Sb or Y) Chalcogels by Impregnated Metal Salts

KAUST Repository

Edhaim, Fatimah A.; Rothenberger, Alexander

2017-01-01

The synthesis of metal chalcogenide aerogels Co0.5M0.33MoS4 (M= Sb or Y) by the sol-gel method is reported. In this system, the building blocks [MoS4]2− chelated with Co2+ and (Sb3+) or (Y3+) salts in nonaqueous solvents forming amorphous networks

Non-platinum electrocatalysts for PEM fuel cells

Energy Technology Data Exchange (ETDEWEB)

Lee, K.; Zhang, L.; Shi, Z.; Hui, R.; Zhang, J. [National Research Council of Canada, Vancouver, BC (Canada). Inst. For Fuel Cell Innovation

2008-07-01

High cost, low reliability and durability are the main barriers preventing widespread commercialization of fuel cells. In particular, the platinum (Pt)-based electrocatalysts used in proton exchange membrane (PEM) fuel cells, including direct methanol fuel cells (DMFCs) are major contributors to the high cost of PEM fuel cells. The Institute for Fuel Cell Innovation at the National Research Council of Canada has developed several new non-Pt electrocatalysts for PEM fuel cell applications. This paper presented the research results on these catalysts, including transition metal macrocycles, chalcogenides, and Ir- or Pd-based alloys. It also described catalyst structure modes via theoretical density functional theory (DFT) calculations. Research activities on these electrocatalysts was summarized in terms of catalytic activity and the oxygen reduction reaction (ORR). Typical catalysts such as cobalt(Co)-polypyrrole (PPy) and the chalcogenides show promising results in terms of catalytic activity and a 4-electron reaction mechanism. Efforts are underway to modify both catalyst structure and synthesis methods in order to further improve catalyst performance. 4 refs., 2 figs.

Heat treatment and thickness-dependent electrical study of Se{sub 50}Te{sub 20}S{sub 30} thin film

Energy Technology Data Exchange (ETDEWEB)

Abd-Elrahman, M.I.; Hafiz, M.M.; Qasem, Ammar; Abdel-Rahim, M.A. [Assiut University, Physics Department, Faculty of Science, Assiut (Egypt)

2016-08-15

Chalcogenide Se{sub 50}Te{sub 20}S{sub 30} thin film of different thickness was deposited using thermal evaporation technique. The thermogram of the chalcogenide bulk Se{sub 50}Te{sub 20}S{sub 30} was obtained using a differential scanning calorimetry (DSC) with heating rate of 7.5 K/min. The glass transition temperature T{sub g}, crystallization temperature T{sub c} and peak crystallization temperature T{sub p} were identified. The X-ray diffraction (XRD) examination indicates the amorphous nature of the as-deposited film and polycrystalline structure of the thermal annealed ones. The dark electrical resistivity (ρ) measurements were taken in temperature range (300-500 K) and thickness range (200-450 nm). Analysis of the electrical resistivity results revealed two types of conduction mechanisms: conduction due to extended states in the temperature range (T > T{sub c}) and variable range hopping in the temperature range (T < T{sub c}). The effect of the heat treatment and thickness on the density of localized states at the Fermi level N(E{sub F}) and hopping parameters were studied. (orig.)

To study the linear and nonlinear optical properties of Se-Te-Bi-Sn/PVP (polyvinylpyrrolidone) nanocomposites

Science.gov (United States)

Tyagi, Chetna; Yadav, Preeti; Sharma, Ambika

2018-05-01

The present work reveals the optical study of Se82Te15Bi1.0Sn2.0/polyvinylpyrrolidone (PVP) nanocomposites. Bulk glasses of chalcogenide was prepared by well-known melt quenching technique. Wet chemical technique is proposed for making the composite of Se82Te15Bi1.0Sn2.0 and PVP polymer as it is easy to handle and cost effective. The composites films were made on glass slide from the solution of Se-Te-Bi-Sn and PVP polymer using spin coating technique. The transmission as well as absorbance is recorded by using UV-Vis-NIR spectrophotometer in the spectral range 350-700 nm. The linear refractive index (n) of polymer nanocomposites are calculated by Swanepoel approach. The linear refractive index (n) PVP doped Se82Te15Bi1.0Sn2.0 chalcogenide is found to be 1.7. The optical band gap has been evaluated by means of Tauc extrapolation method. Tichy and Ticha model was utilized for the characterization of nonlinear refractive index (n2).

Enhanced interfacial thermal transport in pnictogen tellurides metallized with a lead-free solder alloy

Energy Technology Data Exchange (ETDEWEB)

Devender,; Ramanath, Ganpati, E-mail: Ramanath@rpi.edu [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lofgreen, Kelly; Devasenathipathy, Shankar; Swan, Johanna; Mahajan, Ravi [Intel Corporation, Assembly Test and Technology Development, Chandler, Arizona 85226 (United States); Borca-Tasciuc, Theodorian [Department of Mechanical Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2015-11-15

Controlling thermal transport across metal–thermoelectric interfaces is essential for realizing high efficiency solid-state refrigeration and waste-heat harvesting power generation devices. Here, the authors report that pnictogen chalcogenides metallized with bilayers of Sn{sub 96.5}Ag{sub 3}Cu{sub 0.5} solder and Ni barrier exhibit tenfold higher interfacial thermal conductance Γ{sub c} than that obtained with In/Ni bilayer metallization. X-ray diffraction and x-ray spectroscopy indicate that reduced interdiffusion and diminution of interfacial SnTe formation due to Ni layer correlates with the higher Γ{sub c}. Finite element modeling of thermoelectric coolers metallized with Sn{sub 96.5}Ag{sub 3}Cu{sub 0.5}/Ni bilayers presages a temperature drop ΔT ∼ 22 K that is 40% higher than that obtained with In/Ni metallization. Our results underscore the importance of controlling chemical intermixing at solder–metal–thermoelectric interfaces to increase the effective figure of merit, and hence, the thermoelectric cooling efficiency. These findings should facilitate the design and development of lead-free metallization for pnictogen chalcogenide-based thermoelectrics.

Electronic structure of Chevrel-phase high-critical-field superconductors

DEFF Research Database (Denmark)

Andersen, Ole Krogh; Klose, W.; Nohl, H.

1978-01-01

Using muffin-tin orbitals and the atomic-sphere approximation, we have studied the band structures of Chevrel-phase molybdenum chalcogenides, MmMo6X8-x. Generally, these compounds exist for a broad variety of elements, M=Pb,Sn,Ag,Cu and X=S,Se,Te. m may be between 0 and 2, depending on the elemen...

A comparative study of the density of defect states in bulk samples ...

Indian Academy of Sciences (India)

1. Introduction. Numerous potential applications of chalcogenide glasses are proposed in the civil, medi- cal and military areas [1–6]. ... rapidly by removing the ampoule from the furnace and dropping it to ice-cooled water. 2.2 Preparation of pellets and thin films. The glassy alloys of Se90Sb10 thus prepared are ground to a ...

Investigation of electrical and optical properties of Ge-Ga-As-S glasses doped with rare-earth ions

Czech Academy of Sciences Publication Activity Database

Zavadil, Jiří; Kubliha, M.; Kostka, Petr; Iovu, M.; Labaš, V.; Ivanova, Z.G.

-, č. 377 (2013), s. 85-89 ISSN 0022-3093 R&D Projects: GA ČR GAP106/12/2384; GA MŠk 7AMB12SK147 Institutional support: RVO:67985882 ; RVO:67985891 Keywords : Chalcogenide glass * Direct electrical conductivity * Photoluminescence Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; DB - Geology ; Mineralogy (USMH-B) Impact factor: 1.716, year: 2013

Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping

Czech Academy of Sciences Publication Activity Database

Rath, J.K.; Prastani, C.; Nanu, D.E.; Nanu, M.; Schropp, R.E.I.; Vetushka, Aliaksi; Hývl, Matěj; Fejfar, Antonín

2014-01-01

Roč. 251, č. 7 (2014), s. 1309-1321 ISSN 0370-1972 R&D Projects: GA ČR GA13-25747S; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : chalcogenides * chemical bath deposition * core-shell particles * quantum dots * solar cells * tin sulfide Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.489, year: 2014

Valent states of ions in CuCrsub(2(1-x))Vsub(2x)Ssub(4) solid solutions

International Nuclear Information System (INIS)

Prokopenko, V.K.; Prokhorenko, Yu.I.; Shemyakov, A.A.; Menshchikova, T.K.; Gubskaya, G.F.; Kalinnikov, V.T.; AN SSSR, Moscow. Inst. Obshchej i Neorganicheskoj Khimii)

1982-01-01

Using the NMR method electron configurations of ions in copper-chromium chalcogenide spinels, in which part of chromium ions is substituted for by vanadium ions: CuCrsub(2(1-x))Vsub(2x)Ssub(4) (x=0; 0.025; 0.05), have been studied. In CuCrsub(2(1-x))Vsub(2x)Ssub(4) at x [ru

Ultrafast Synaptic Events in a Chalcogenide Memristor

Science.gov (United States)

Li, Yi; Zhong, Yingpeng; Xu, Lei; Zhang, Jinjian; Xu, Xiaohua; Sun, Huajun; Miao, Xiangshui

2013-04-01

Compact and power-efficient plastic electronic synapses are of fundamental importance to overcoming the bottlenecks of developing a neuromorphic chip. Memristor is a strong contender among the various electronic synapses in existence today. However, the speeds of synaptic events are relatively slow in most attempts at emulating synapses due to the material-related mechanism. Here we revealed the intrinsic memristance of stoichiometric crystalline Ge2Sb2Te5 that originates from the charge trapping and releasing by the defects. The device resistance states, representing synaptic weights, were precisely modulated by 30 ns potentiating/depressing electrical pulses. We demonstrated four spike-timing-dependent plasticity (STDP) forms by applying programmed pre- and postsynaptic spiking pulse pairs in different time windows ranging from 50 ms down to 500 ns, the latter of which is 105 times faster than the speed of STDP in human brain. This study provides new opportunities for building ultrafast neuromorphic computing systems and surpassing Von Neumann architecture.

Characterising refractive index dispersion in chalcogenide glasses

DEFF Research Database (Denmark)

Fang, Y.; Sojka, L.; Jayasuriya, D.

2016-01-01

Much effort has been devoted to the study of glasses that contain the chalcogen elements (sulfur, selenium and tellurium) for photonics' applications out to MIR wavelengths. In this paper we describe some techniques for determining the refractive index dispersion characteristics of these glasses...

Method of making metal-chalcogenide photosensitive devices

International Nuclear Information System (INIS)

Kazacos, M.S.; Miller, B.

1981-01-01

We have found that a photoactive metal selenide film, such as cdse, may be formed by cathodic eletrodeposition from a selenosulfite (Seso32-) solution without the need for a subsequent heat treating step which, it is hypothesized, was required by the simultaneous deposition of elemental selenium

Study of film semiconductor glass-metal interfaces by nuclear methods

International Nuclear Information System (INIS)

Wehr, Muryel.

1979-01-01

The use of nuclear method analysis, particularly α particles and Li + ions elastic backscattering permitted to study the glass chalcogenide-metal interdiffusion submitted to thermal and electric stresses. The 8 MeV alpha particles are of a great interest, they increase five times the depth of the gold analysis in glasses compared with the 3,5 MeV alpha particles [fr

The possibilities of searching for new materials based on isocationic analogs of ZnBVI

Science.gov (United States)

Kirovskaya, I. A.; Mironova, E. V.; Kosarev, B. A.; Yureva, A. V.; Ekkert, R. V.

2017-08-01

Acid-base properties of chalcogenides - analogs of ZnBVI - were investigated in detail by modern techniques. The regularities of their composition-dependent changes were set, these regularities correlating with the dependencies "bulk physicochemical property - composition". The main reason for such correlations was found, facilitating the search for new materials of corresponding sensors. In this case, it was the sensors for basic gases impurities.

Structure of liquid Te-based alloys used in rewritable DVDs

Energy Technology Data Exchange (ETDEWEB)

Delheusy, M.; Raty, J.Y.; Detemple, R.; Welnic, W.; Wuttig, M.; Gaspard, J.-P

2004-07-15

We analyze the structure of Te-based chalcogenide compounds that are used as materials for rewritable DVDs by using a combination of neutron diffraction and ab initio computer simulation. We show that in the liquid, the atoms have a low average coordination number, as the result of a Peierls distortion. The partial pair correlation functions are obtained from the computer simulation data.

Optical properties and photoinduced phenomena in glasses and thin films of system As2Se3-As2Te3-SnTe

Czech Academy of Sciences Publication Activity Database

Parchanski, V.; Frumarová, Božena; Frumar, M.; Hrdlička, M.; Vlček, Milan

2012-01-01

Roč. 14, 1-2 (2012), 150-156 ISSN 1454-4164 R&D Projects: GA ČR GA203/09/0827 Institutional research plan: CEZ:AV0Z40500505 Keywords : chalcogenides * thin films * optical properties Subject RIV: CA - Inorganic Chemistry Impact factor: 0.516, year: 2012 http://joam.inoe.ro/index.php?option=magazine&op=view&idu=2997&catid=69

Guided Acoustic and Optical Waves in Silicon-on-Insulator for Brillouin Scattering and Optomechanics

Science.gov (United States)

2016-08-01

APL PHOTONICS 1, 071301 (2016) Guided acoustic and optical waves in silicon-on- insulator for Brillouin scattering and optomechanics Christopher J...is possible to simultaneously guide optical and acoustic waves in the technologically important silicon on insulator (SOI) material system. Thin...high sound velocity — makes guiding acoustic waves difficult, motivating the use of soft chalcogenide glasses and partial or complete releases (removal

Extension of Mediema's Macroscopic Atom Model to the Elements of Group 16 (O, S, Se, Te ,Po)

Energy Technology Data Exchange (ETDEWEB)

Neuhausen, J.; Eichler, B

2003-09-01

A consistent set of Miedema-parameters has been developed for the elements of the chalcogen group (Group 16 of the periodic table of the elements: 0, S, Se, Te, Po) from ab-initio quantum-mechanical calculations as weIl as empirical correlations. Using this parameter set thermochemical properties such as enthalpies of formation of solid metal chalcogenides, partial molar enthalpies of solution of chalcogens in liquid and solid metaIs, partial molar enthalpies of evaporation of the chalcogens from liquid metal solution into the monoatomic gaseous state, partial molar enthalpies of adsorption of chalcogenides on metal surfaces at zero coverage and partial molar enthalpies of segregation of the chalcogens in trace amounts within solid metal matrices have been calculated. These properties are compared with available experimental data and discussed with an emphasis on the periodic behaviour of the elements. The model calculations show that a description of the thermochemical properties of the chalcogens using the semi-empirical Miedema approach is possible. The calculated properties can serve as a basis for the prediction of the chemical interactions for metal-chalcogen combinations that have not been studied experimentally so far. (author)

Extension of Mediema's Macroscopic Atom Model to the Elements of Group 16 (O, S, Se, Te ,Po)

International Nuclear Information System (INIS)

Neuhausen, J.; Eichler, B.

2003-09-01

A consistent set of Miedema-parameters has been developed for the elements of the chalcogen group (Group 16 of the periodic table of the elements: 0, S, Se, Te, Po) from ab-initio quantum-mechanical calculations as weIl as empirical correlations. Using this parameter set thermochemical properties such as enthalpies of formation of solid metal chalcogenides, partial molar enthalpies of solution of chalcogens in liquid and solid metaIs, partial molar enthalpies of evaporation of the chalcogens from liquid metal solution into the monoatomic gaseous state, partial molar enthalpies of adsorption of chalcogenides on metal surfaces at zero coverage and partial molar enthalpies of segregation of the chalcogens in trace amounts within solid metal matrices have been calculated. These properties are compared with available experimental data and discussed with an emphasis on the periodic behaviour of the elements. The model calculations show that a description of the thermochemical properties of the chalcogens using the semi-empirical Miedema approach is possible. The calculated properties can serve as a basis for the prediction of the chemical interactions for metal-chalcogen combinations that have not been studied experimentally so far. (author)

Microstructures and thermoelectric properties of GeSbTe based layered compounds

Energy Technology Data Exchange (ETDEWEB)

Yan, F.; Zhu, T.J.; Zhao, X.B. [Zhejiang University, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Hangzhou (China); Dong, S.R. [Zhejiang University, Department of Information and Electronics Engineering, Hangzhou (China)

2007-08-15

Microstructures and thermoelectric properties of Ge{sub 1}Sb{sub 2}Te{sub 4} and Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide semiconductors have been investigated to explore the possibility of their thermoelectric applications. The phase transformation from the face-centered cubic to hexagonal structure was observed in Ge{sub 2}Sb{sub 2}Te{sub 5} compounds prepared by the melt spinning technique. The Seebeck coefficient and electrical resistivity of the alloys were increased due to the enhanced scattering of charge carriers at grain boundaries. The maximum power factors of the rapidly solidified Ge{sub 1}Sb{sub 2}Te{sub 4} and Ge{sub 2}Sb{sub 2}Te{sub 5} attained 0.975 x 10{sup -3} Wm{sup -1}K{sup -2} at 750 K and 0.767 x 10{sup -3} Wm{sup -1}K{sup -2} at 643 K respectively, higher than those of water quenched counterparts, implying that thermoelectric properties of GeSbTe based layered compounds can be improved by grain refinement. The present results show this class of chalcogenide semiconductors is promising for thermoelectric applications. (orig.)

Processing and characterization of new oxysulfide glasses in the Ge-Ga-As-S-O system

International Nuclear Information System (INIS)

Maurel, C.; Petit, L.; Dussauze, M.; Kamitsos, E.I.; Couzi, M.; Cardinal, T.; Miller, A.C.; Jain, H.; Richardson, K.

2008-01-01

New oxysulfide glasses have been prepared in the Ge-Ga-As system employing a two-step melting process which involves the processing of the chalcogenide glass (ChG) and its subsequent melting with amorphous GeO 2 powder. Optical characterization of the synthesized oxysulfide glasses has shown that the cut-off wavelength decreases with increasing oxygen content, and this has been correlated to results of Raman and infrared (IR) spectroscopies which show the formation of new oxysulfide structural units. X-ray photoelectron spectroscopy (XPS) analysis to probe the bonding environment of oxygen atoms in the oxysulfide glass network, has revealed the preferred formation of Ga-O and Ge-O bonds in comparison to As-O bonds. This work has demonstrated that melting a ChG glass with GeO 2 leads to the formation of new oxysulfide glassy materials. - Graphical abstract: In this paper, we explain how new oxysulfide glasses are prepared in the Ge-Ga-As system employing a two-step process: (1) the processing of the chalcogenide glass (ChG) and (2) the re-melting of the ChG with GeO 2 powder. Raman, infrared and XPS spectroscopies show the formation of new oxysulfide structural units

High-mobility ultrathin semiconducting films prepared by spin coating

Science.gov (United States)

Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

2004-03-01

The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

Nanocrystal conversion chemistry: A unified and materials-general strategy for the template-based synthesis of nanocrystalline solids

International Nuclear Information System (INIS)

Vasquez, Yolanda; Henkes, Amanda E.; Chris Bauer, J.; Schaak, Raymond E.

2008-01-01

The concept of nanocrystal conversion chemistry, which involves the use of pre-formed nanoparticles as templates for chemical transformation into derivative solids, has emerged as a powerful approach for designing the synthesis of complex nanocrystalline solids. The general strategy exploits established synthetic capabilities in simple nanocrystal systems and uses these nanocrystals as templates that help to define the composition, crystal structure, and morphology of product nanocrystals. This article highlights key examples of 'conversion chemistry' approaches to the synthesis of nanocrystalline solids using a variety of techniques, including galvanic replacement, diffusion, oxidation, and ion exchange. The discussion is organized according to classes of solids, highlighting the diverse target systems that are accessible using similar chemical concepts: metals, oxides, chalcogenides, phosphides, alloys, intermetallic compounds, sulfides, and nitrides. - Graphical abstract: Nanocrystal conversion chemistry uses pre-formed nanoparticles as templates for chemical transformation into derivative solids, helping to define the composition, crystal structure, and morphology of product nanocrystals that have more complex features than their precursor templates. This article highlights the application of this concept to diverse classes of solids, including metals, oxides, chalcogenides, phosphides, alloys, intermetallics, sulfides, and nitrides

Dielectric relaxation and AC conductivity studies of Se90Cd10−xInx glassy alloys

Directory of Open Access Journals (Sweden)

Nitesh Shukla

2016-06-01

Full Text Available Chalcogenide glassy alloys of Se90Cd10−xInx (x = 2, 4, 6, 8 are synthesized by melt quench technique. The prepared glassy alloys have been characterized by techniques such as differential scanning calorimetry (DSC, scanning electron microscopy (SEM and energy dispersive X-ray (EDAX. Dielectric properties of Se90Cd10−xInx (x = 2, 4, 6, 8 chalcogenide glassy system have been studied using impedance spectroscopic technique in the frequency range 42 Hz to 5 MHz at room temperature. It is found that the dielectric constants ɛ′, dielectric loss factor ɛ″ and loss angle Tan δ depend on frequency. ɛ′, ɛ″ and loss angle Tan δ are found to be decreasing with the In content in Se90Cd10−xInx glassy system. AC conductivity of the prepared sample has also been studied. It is found that AC conductivity increases with frequency where as it has decreasing trend with increasing In content in Se–Cd matrix. The semicircles observed in the Cole–Cole plots indicate a single relaxation process.

Soluble Lead and Bismuth Chalcogenidometallates: Versatile Solders for Thermoelectric Materials

Energy Technology Data Exchange (ETDEWEB)

Zhang, Hao [Department; Son, Jae Sung [Department; School; Dolzhnikov, Dmitriy S. [Department; Filatov, Alexander S. [Department; Hazarika, Abhijit [Department; Wang, Yuanyuan [Department; Hudson, Margaret H. [Department; Sun, Cheng-Jun [Advanced; Chattopadhyay, Soma [Physical; Talapin, Dmitri V. [Department; Center

2017-07-27

Here we report the syntheses of largely unexplored lead and bismuth chalcogenidometallates in the solution phase. Using N2H4 as the solvent, new compounds such as K6Pb3Te6·7N2H4 were obtained. These soluble molecular compounds underwent cation exchange processes using resin chemistry, replacing Na+ or K+ by decomposable N2H5+ or tetraethylammonium cations. They also transformed into stoichiometric lead and bismuth chalcogenide nanomaterials with the addition of metal salts. Such a versatile chemistry led to a variety of composition-matched solders to join lead and bismuth chalcogenides and tune their charge transport properties at the grain boundaries. Solution-processed thin films composed of Bi0.5Sb1.5Te3 microparticles soldered by (N2H5)6Bi0.5Sb1.5Te6 exhibited thermoelectric power factors (~28 μW/cm K2) comparable to those in vacuum-deposited Bi0.5Sb1.5Te3 films. The soldering effect can also be integrated with attractive fabrication techniques for thermoelectric modules, such as screen printing, suggesting the potential of these solders in the rational design of printable and moldable thermoelectrics.

Thermal effects on light emission in Yb3+ -sensitized rare-earth doped optical glasses

International Nuclear Information System (INIS)

Gouveia, E.A.; Araujo, M.T. de; Gouveia-Neto, A.S.

2001-01-01

The temperature effect upon infrared-to-visible frequency upconversion fluorescence emission in off-resonance infrared excited Yb 3+ -sensitized rare-earth doped optical glasses is theoretically and experimentally investigated. We have examined samples of Er3+/Yb 3+ -codoped Ga 2 S 3 :La 2 O 3 chalcogenide glasses and germanosilicate optical fibers, and Ga2O3:La 2 O 3 chalcogenide and fluoroindate glasses codoped with Pr 3+ /Yb 3+ , excited off-resonance at 1.064μm. The experimental results revealed thermal induced enhancement in the visible upconversion emission intensity as the samples temperatures were increased within the range of 20 deg C to 260 deg C. The fluorescence emission enhancement is attributed to the temperature dependent multiphonon-assisted anti-Stokes excitation process of the ytterbium-sensitizer. A theoretical approach that takes into account a sensitizer temperature dependent effective absorption cross section, which depends upon the phonon occupation number in the host matrices, has proven to agree very well with the experimental data. As beneficial applications of the thermal enhancement, a temperature tunable amplifier and a fiber laser with improved power performance are presented. (author)

Straightforward high-pressure synthesis and characterization of indium-based thiospinels: photocatalytic potential for hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Falcon, Horacio [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco (Spain); NANOTEC (Centro de Investigacion en Nanociencia y Nanotecnologia), Universidad Tecnologica Nacional-Facultad Regional Cordoba, Cordoba (Argentina); Tartaj, Pedro; Alonso, Jose Antonio [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco (Spain); Vaquero, Fernando; Navarro, Rufino M.; Fierro, Jose Luis G. [Instituto de Catalisis y Petroleoquimica, CSIC, Cantoblanco, Madrid (Spain); Bolletta, Juan P.; Paoli, Juan M. de; Carbonio, Raul E. [INFIQC - CONICET, Departamento de Fisicoquimica, Facultad de Ciencias Quimicas, Universidad Nacional de Cordoba (Argentina); Fernandez-Diaz, Maria Teresa [Institut Laue Langevin, Grenoble (France)

2016-04-15

Ternary chalcogenides (AB{sub 2}X{sub 4}) based on the spinel structure are gaining a great deal of attention because of the possibility of tuning their magnetic and optoelectronic properties not only by changing chemical composition but also by altering their degree of inversion. Here we report a rapid high-pressure synthetic method for the synthesis of MIn{sub 2}S{sub 4} powders starting from commercially available solid sulfides. We prove the versatility of our method by reporting the synthesis of six members of the MIn{sub 2}S{sub 4} family (M = Mn, Fe, Co, Ni, Zn, and Cd) under high-pressure conditions (3.5 GPa); these compounds show complete to moderate degrees of inversion. Furthermore, this family covers a spectral region that includes visible band gaps. Interestingly, the structural refinement carried out by X-ray and neutron diffraction allows one to establish positive correlations between the gap and different parameters, including the degree of inversion. Finally, as a proof-of-concept, these ternary chalcogenides show moderate photocatalytic hydrogen production from aqueous solutions. (Copyright copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electrical transport and magnetic properties of misfit layered compounds intercalated with cobaltocene

NARCIS (Netherlands)

Morales, J; Santos, J; Baas, J; Wiegers, GA; Martinez, JL

1999-01-01

The electrical and magnetic properties of misfit layered cobaltocene complexes of composition (PbS)(1.18)(TiS2)(2)(CoCp2)(0.28), (PbS)(1.14)(TaS2)(2)(CoCp2)(0.28), and (PbSe)(1.12)(NbSe2)(2)(CoCp2)(0.27) [Cp = C5H5-] were investigated. All the pristine chalcogenides studied exhibit a metallic

Molten salt battery having inorganic paper separator

Science.gov (United States)

Walker, Jr., Robert D.

1977-01-01

A high temperature secondary battery comprises an anode containing lithium, a cathode containing a chalcogen or chalcogenide, a molten salt electrolyte containing lithium ions, and a separator comprising a porous sheet comprising a homogenous mixture of 2-20 wt.% chrysotile asbestos fibers and the remainder inorganic material non-reactive with the battery components. The non-reactive material is present as fibers, powder, or a fiber-powder mixture.

An Integrated Computational and Experimental Approach Toward the Design of Materials for Fuel Cell Systems

Science.gov (United States)

2012-10-01

13 Based on the limited work done, the best reported ORR chalcogenide electrocatalysts for PEMFC applications can be ranked as follows: MoRuSe... PEMFC catalysts is the durability of the catalyst particles. Particle size distribution tends to shift towards larger particles during the...the design of new materials for applications in PEMFCs . Reference: A more detailed treatment of the topics of this section, Experimental Target 11

Electronic and ground state properties of ThTe

Energy Technology Data Exchange (ETDEWEB)

Bhardwaj, Purvee, E-mail: purveebhardwaj@gmail.com; Singh, Sadhna, E-mail: drsadhna100@gmail.com [High Pressure Research Lab. Department of Physics Barkatullah University, Bhopal (MP) 462026 (India)

2016-05-06

The electronic properties of ThTe in cesium chloride (CsCl, B2) structure are investigated in the present paper. To study the ground state properties of thorium chalcogenide, the first principle calculations have been calculated. The bulk properties, including lattice constant, bulk modulus and its pressure derivative are obtained. The calculated equilibrium structural parameters are in good agreement with the available experimental and theoretical results.

Arsenic sulfide layers for dielectric reflection mirrors prepared from solution

Science.gov (United States)

Matějec, Vlastimil; Pedlikova, Jitka; BartoÅ, Ivo; Podrazký, Ondřej

2017-12-01

Chalcogenide materials due to high refractive indices, transparency in the mid-IR spectral region, nonlinear refractive indices, etc, have been employed as fibers and films in different photonic devices such as light amplifiers, optical regenerators, broadband radiation sources. Chalcogenide films can be prepared by physical methods as well as by solution-based techniques in which solutions of chalcogenides in amines are used. This paper presents results on the solution-based fabrication and optical characterization of single arsenic sulfide layers and multilayer stacks containing As2S3 layers together with porous silica layers coated on planar and fiber-optic substrates. Input As2S3 solutions for the layer fabrications were prepared by dissolving As2S3 powder in n-propylamine in a concentration of 0.50 mol/l. These solutions were applied on glass slides by dip-coating method and obtained layers were thermally treated in vacuum at temperatures up to 180 °C. Similar procedure was used for As2S3 layers in multilayer stacks. Such stacks were fabricated by repeating the application of one porous silica layer prepared by the sol-gel method and one As2S3 layer onto glass slides or silica fibers (a diameter of 0.3 mm) by using the dip-coating method. It has been found that the curing process of the applied layers has to be carefully controlled in order to obtain stacks with three pairs of such layers. Single arsenic and porous silica layers were characterized by optical microscopy, and by measuring their transmission spectra in a range of 200-2500 nm. Thicknesses and refractive indices were estimated from the spectra. Transmission spectra of planar multilayer stacks were measured, too. Interference bands have been determined from optical measurements on the multilayer stacks with a minimum transmittance of about 50% which indicates the possibility of using such stacks as reflecting mirrors.

Frequency Agile Microwave Photonic Notch Filter in a Photonic Chip

Science.gov (United States)

2016-10-21

Interference mitigation is crucial in modern radiofrequency (RF) communications systems with dynamically changing operating frequencies, such as cognitive...frequency measurement (IFM) system was also explored. 4. Results and discussions: a. High extinction tunable notch filter in a chalcogenide chip [Optica...Figure 2(b, lower). The measured interferer suppression in this case was 47 dB, limited by the noise floor of the measurements . This paper is in the

2D materials: Graphene and others

Energy Technology Data Exchange (ETDEWEB)

Bansal, Suneev Anil, E-mail: suneev@gmail.com; Singh, Amrinder Pal [Deptt. of Mech Engg, UIET, Panjab University, Chandigarh (India); Kumar, Suresh [Deptt. of Applied Sciences, UIET, Panjab University, Chandigarh (India)

2016-05-06

Present report reviews the recent advancements in new atomically thick 2D materials. Materials covered in this review are Graphene, Silicene, Germanene, Boron Nitride (BN) and Transition metal chalcogenides (TMC). These materials show extraordinary mechanical, electronic and optical properties which make them suitable candidates for future applications. Apart from unique properties, tune-ability of highly desirable properties of these materials is also an important area to be emphasized on.

Laser induced structural transformation in chalcogenide based superlattices

Energy Technology Data Exchange (ETDEWEB)

Zallo, Eugenio, E-mail: zallo@pdi-berlin.de; Wang, Ruining; Bragaglia, Valeria; Calarco, Raffaella [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2016-05-30

Superlattices made of alternating layers of nominal GeTe and Sb{sub 2}Te{sub 3} have been studied by micro-Raman spectroscopy. A structural irreversible transformation into ordered GeSbTe alloy is induced by high power laser light exposure. The intensity ratio of anti-Stokes and Stokes scattering under laser illumination gives a maximum average temperature in the sample of 177 °C. The latter is lower than the growth temperature and of 400 °C necessary by annealing to transform the structure in a GeSbTe alloy. The absence of this configuration after in situ annealing even up to 300 °C evidences an electronic excitation induced-transition which brings the system into a different and stable crystalline state.

Laser induced structural transformation in chalcogenide based superlattices

International Nuclear Information System (INIS)

Zallo, Eugenio; Wang, Ruining; Bragaglia, Valeria; Calarco, Raffaella

2016-01-01

Superlattices made of alternating layers of nominal GeTe and Sb 2 Te 3 have been studied by micro-Raman spectroscopy. A structural irreversible transformation into ordered GeSbTe alloy is induced by high power laser light exposure. The intensity ratio of anti-Stokes and Stokes scattering under laser illumination gives a maximum average temperature in the sample of 177 °C. The latter is lower than the growth temperature and of 400 °C necessary by annealing to transform the structure in a GeSbTe alloy. The absence of this configuration after in situ annealing even up to 300 °C evidences an electronic excitation induced-transition which brings the system into a different and stable crystalline state.

Chalcogenide Glass Lasers on Silicon Substrate Integrated Photonics

Science.gov (United States)

2016-07-08

driven optoacoustic devices that permit stable GHz mode-locking of fiber ring lasers; bright deep and vacuum UV sources based on gas-filled hollow core ...topological insulators with ultracold atoms. Bio: Wolfgang Ketterle has been the John D. MacArthur professor of physics at MIT since 1998. He leads...remarkable enhancements (and in some cases reductions) in many kinds of light-matter interaction. Recent examples include the solid core PCFs widely

Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

Science.gov (United States)

Singh, N. B.; Coriell, S. R.; Su, Ching-Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

2016-01-01

Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

Progress towards marketable earth-abundant chalcogenide solar cells

Energy Technology Data Exchange (ETDEWEB)

Todorov, Teodor; Gunawan, Oki; Chey, S Jay; Goislard de Monsabert, Thomas; Prabhakar, Aparna; Mitzi, David B., E-mail: dmitzi@us.ibm.com

2011-08-31

Kesterite-related photovoltaic materials are considered a promising alternative to CdTe and Cu(In,Ga)(S,Se){sub 2} absorbers, primarily because they are not reliant on scarce elements such as indium and tellurium or the heavy metal cadmium. Recently, we reported a performance breakthrough for this materials class, reaching by a simple hydrazine-based deposition technique 9.6% power conversion efficiency for Cu{sub 2}ZnSn(S,Se){sub 4} devices (40% improvement over vacuum-based methods). Here, more detailed characterization for a hydrazine-prepared device shows the potential of this technology for further efficiency improvement. We also present initial device results for Cu{sub 2}ZnSn(S,Se){sub 4} films deposited using a mixed water-hydrazine-based solvent, yielding devices with 8.1% efficiency.

Evanescent field infrared spectroscopy using chalcogenide glass fiber

International Nuclear Information System (INIS)

Katz Moti

1992-06-01

In the last few years a simple and cheap fiber-optics based spectroscopy method was developed for the investigation of liquids, pastes gases and thin layers. The fiber is immersed in the sample, and the investigated material becomes the fiber cladding. the interaction between the guided radiation in the fiber and the specimen is taking place by evanescent field which extends outside the fiber. This work concentrates in the quantitative characterization of the absorption of the evanescent field by the fiber cladding (the specimen). This subject was dealt with only briefly in the earlier works, and the aim of this work is to obtain a comprehensive understanding of this issue. (author)

Controlling vacancies in chalcogenides as energy harvesting materials

NARCIS (Netherlands)

Li, Guowei

2016-01-01

Recent years witnessed fruitful results on tailoring properties and application performance, especially in the field of clean energy storage and harvesting materials. Defects, especially elemental vacancies, exist universally and are inevitable in materials. Due to the difficulties to precisely map

Multinary diamond-like chalcogenides for promising thermoelectric application

Science.gov (United States)

Zhang, Dan; Bai, Hong-Chang; Li, Zhi-Liang; Wang, Jiang-Long; Fu, Guang-Sheng; Wang, Shu-Fang

2018-04-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 51372064 and 61704044) and the Key Project of the Natural Science Foundation of Hebei Province, China (Grant No. E2017201227).

Phase transition of La- chalcogenides under high pressure

Energy Technology Data Exchange (ETDEWEB)

Gupta, Dinesh Chandra [Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University, Gwalior - 474 011 (India); Raypuria, Gajendra Singh, E-mail: gsraypuria@gmail.com [Department of Physics, Govt. K.R.G. P.G. Autonomous College, Gwalior - 474 001 (India)

2014-04-24

The lanthanum compounds have been found to undergo transition from their initial NaCl-type structure to high pressure body centered tetragonal (BCT) structure (distorted CsCl-type P4/mmm) using CTIP model. The calculated values of cohesive energy, lattice constant, phase transition pressure, relative volume collapse agree well with the available measured data and better than those computed by earlier workers.

Theory of anomalous Hall effect in europium chalcogenides

International Nuclear Information System (INIS)

Sinkkonen, J.

1976-04-01

Considering the exchange interaction between the conduction electrons in a broad 5d-type band and the magnetic electrons in the localized 4f-shells, it is shown that in addition to the ordinary d-f exchange diagonal in band index, there is also a non-diagonal interaction representing a one particle transfer between the conduction and magnetic electrons. Including the spin-orbit coupling, an effective Hamiltonian for the conductionelectrons is obtained, which contains additional asymmetric scattering terms. The ordinary d-f exchange is treated as the dominating scattering interaction. The anomatous Hall effect results by skew scattering and side jump mechanisms. The density matrix method is used to derive the transport properties. The effect of the correlation of spins at different lattice sites is discussed. The model indicates that the anomatous Hall effect can be seen in heavily doped samples. (author)

Power requirements reducing of FBG based all-optical switching

Science.gov (United States)

Scholtz, Ľubomír.; Solanská, Michaela; Ladányi, Libor; Müllerová, Jarmila

2017-12-01

Although Fiber Bragg gratings (FBGs) are well known devices, their using as all-optical switching elements has been still examined. Current research is focused on optimization of their properties for their using in future all-optical networks. The main problem are high switching intensities needed for achieving the changes of the transmission state. Over several years switching intensities have been reduced from hundreds of GW/cm2 to tens of MW/cm2 by selecting appropriate gratings and signal parameters or using suitable materials. Two principal nonlinear effects with similar power requirements can result in the bistable transmission/reflection of an input optical pulse. In the self-phase modulation (SPM) regime switching is achieved by the intense probe pulse itself. Using cross-phase modulation (XPM) a strong pump alters the FBG refractive index experienced by a weak probe pulse. As a result of this the detuning of the probe pulse from the center of the photonic band gap occurs. Using of XPM the effect of modulation instability is reduced. Modulation instability which is the main SPM degradation mechanism. We focused on nonlinear FBGs based on chalcogenide glasses which are very often used in various applications. Thanks to high nonlinear parameters chalcogenide glasses are suitable candidates for reducing switching intensities of nonlinear FBGs.