Synthesis and transport characterization of electrochemically deposited CdTe nanowires

Science.gov (United States)

Kaur, Jaskiran; Kaur, Harmanmeet; Singh, R. C.

2018-04-01

This paper reports the synthesis and characterization of CdTe nanowires. A thin polymeric films were irradiated with 80MeV Ag ions at a fluence of 8E7 ions/cm2, followed by UV irradiation and chemically etching in aqueous NaOH. Nanosizes go-through pores so formed were filled using a specially designed cell via electrodeposition. Nanowires so formed were further studied using SEM, I-V, UV and XRD analysis. SEM images show very smooth and uniform CdTe nanowires freely standing on the substrate. The in-situ I-V characteristics of nano-/micro structures was carried out at room temperature by leaving the structures embedded in the insulating template membrane itself.

Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

International Nuclear Information System (INIS)

Mayo, B.

1998-01-01

We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350C and completely recrystallized after the same treatment at 400C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures

Analysis of the electrodeposition and surface chemistry of CdTe, CdSe, and CdS thin films through substrate-overlayer surface-enhanced Raman spectroscopy.

Science.gov (United States)

Gu, Junsi; Fahrenkrug, Eli; Maldonado, Stephen

2014-09-02

The substrate-overlayer approach has been used to acquire surface enhanced Raman spectra (SERS) during and after electrochemical atomic layer deposition (ECALD) of CdSe, CdTe, and CdS thin films. The collected data suggest that SERS measurements performed with off-resonance (i.e. far from the surface plasmonic wavelength of the underlying SERS substrate) laser excitation do not introduce perturbations to the ECALD processes. Spectra acquired in this way afford rapid insight on the quality of the semiconductor film during the course of an ECALD process. For example, SERS data are used to highlight ECALD conditions that yield crystalline CdSe and CdS films. In contrast, SERS measurements with short wavelength laser excitation show evidence of photoelectrochemical effects that were not germane to the intended ECALD process. Using the semiconductor films prepared by ECALD, the substrate-overlayer SERS approach also affords analysis of semiconductor surface adsorbates. Specifically, Raman spectra of benzenethiol adsorbed onto CdSe, CdTe, and CdS films are detailed. Spectral shifts in the vibronic features of adsorbate bonding suggest subtle differences in substrate-adsorbate interactions, highlighting the sensitivity of this methodology.

Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

2013-09-03

Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

Science.gov (United States)

Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

2016-09-01

Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Heisler, Christoph; Brueckner, Michael; Lind, Felix; Kraft, Christian; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2012-07-01

Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

Electrodeposition route to synthesize cigs films – an economical way ...

African Journals Online (AJOL)

Electrodeposition route to synthesize cigs films – an economical way to harness solar energy. ... for solar cells, how the charge separation in this nano scale photovoltaic (PV) materials occurs which help in absorption of radiation, and the electro-deposition route, a low cost one, produces thin film solar cells are analyzed.

Morphology selection for cupric oxide thin films by electrodeposition.

Science.gov (United States)

Dhanasekaran, V; Mahalingam, T; Chandramohan, R

2011-10-01

Polycrystalline cupric oxide thin films were deposited using alkaline solution bath employing cathodic electrodeposition method. The thin films were electrodeposited at various solution pH. The surface morphology and elemental analyzes of the films were studied using scanning electron microscopy (SEM) and energy dispersive X-ray analysis, respectively. SEM studies revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. Mesh average on multiple lattice mode atomic force microscopy image was obtained and reported. Copyright © 2011 Wiley-Liss, Inc.

Optical Properties of Al- and Sb-Doped CdTe Thin Films

Directory of Open Access Journals (Sweden)

A. A. J. Al-Douri

2010-01-01

Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

Fabrication of mesoporous cerium dioxide films by cathodic electrodeposition.

Science.gov (United States)

Kim, Young-Soo; Lee, Jin-Kyu; Ahn, Jae-Hoon; Park, Eun-Kyung; Kim, Gil-Pyo; Baeck, Sung-Hyeon

2007-11-01

Mesoporous cerium dioxide (Ceria, CeO2) thin films have been successfully electrodeposited onto ITO-coated glass substrates from an aqueous solution of cerium nitrate using CTAB (Cetyltrimethylammonium Bromide) as a templating agent. The synthesized films underwent detailed characterizations. The crystallinity of synthesized CeO2 film was confirmed by XRD analysis and HR-TEM analysis, and surface morphology was investigated by SEM analysis. The presence of mesoporosity in fabricated films was confirmed by TEM and small angle X-ray analysis. As-synthesized film was observed from XRD analysis and HR-TEM image to have well-crystallized structure of cubic phase CeO2. Transmission electron microscopy and small angle X-ray analysis revealed the presence of uniform mesoporosity with a well-ordered lamellar phase in the CeO2 films electrodeposited with CTAB templating.

A computational study on the energy bandgap engineering in performance enhancement of CdTe thin film solar cells

Directory of Open Access Journals (Sweden)

Ameen M. Ali

Full Text Available In this study, photovoltaic properties of CdTe thin film in the configuration of n-SnO2/n-CdS/p-CdTe/p-CdTe:Te/metal have been studied by numerical simulation software named “Analysis of Microelectronic and Photonic Structure” (AMPS-1D. A modified structure for CdTe thin film solar cell has been proposed by numerical analysis with the insertion of a back contact buffer layer (CdTe:Te. This layer can serve as a barrier that will decelerate the copper diffusion in CdTe solar cell. Four estimated energy bandgap relations versus the Tellurium (Te concentrations and the (CdTe:Te layer thickness have been examined thoroughly during simulation. Correlation between energy bandgap with the CdTe thin film solar cell performance has also been established. Keywords: Numerical modelling, CdTe thin film, Solar cell, AMPS-1D, Bandgap

The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

Energy Technology Data Exchange (ETDEWEB)

Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing, E-mail: libing70@126.com; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

2016-01-01

Graphical abstract: - Highlights: • The large-area CdTe film has been prepared by PVD under the pressure of 0.9 kPa. • The as-prepared CdTe thin film processes excellent photovoltaic properties. • This technique is suitable for depositing large-area CdTe thin film. • The 14.6% champion efficiency CdS/CdTe cell has been achieved. - Abstract: The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O{sub 2} pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm{sup 2}. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O{sub 2} flow. Through this method, the compact and uniform CdTe film (30 × 40 cm{sup 2}) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm{sup 2}) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (J{sub sc}) of the cell is 26.9 mA/cm{sup 2}, open circuit voltage (V{sub oc}) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

Polycrystalline Thin-Film Cadmium Telluride Solar Cells Fabricated by Electrodeposition; Final Technical Report, 20 March 1995-15 June 1998

Energy Technology Data Exchange (ETDEWEB)

Trefny, J. U.; Mao, D.; Kaydanov, V.; Ohno, T. R.; Williamson, D. L.; Collins, R.; Furtak, T. E.

1999-01-27

This report summarizes work performed by the Colorado School of Mines Department of Physics under this subcontract. Based on the studies conducted, researchers increased the efficiency of the cells with electrodeposited CdTe and CBD CdS by 3% on average ({approx}30 relative %). The improvement came from 1. Optimization of CdS initial thickness taking into account CdS consumption of CdTe during the CdTe/CdS post-deposition treatment; optimization of CdS post-deposition treatment with CdCl2 aimed at prevention of Te diffusion into CdS and improvement of the CdS film morphology and electronic properties. That led to a considerable increase in short circuit current, by 13% on average. 2. Optimization of CdTe thickness and post-deposition treatment which led to a significant increase in Voc, by {approx}70 mV. The highest Voc obtained exceeded 800 mV. 3. Development of a ZnTe:Cu/Metal back contact processing procedure that included selection of optimal Cu content, deposition regime and post-deposition treatment conditions. As a result, back contact resistance as low as 0.1W-cm2 was obtained. The cell stability was measured on exposure to accelerated stress conditions. Preliminary studies of some new approaches to improvement of CdS/CdTe structure were conducted.

Photosensitive space charge limited current in screen printed CdTe thin films

Science.gov (United States)

Vyas, C. U.; Pataniya, Pratik; Zankat, Chetan K.; Patel, Alkesh B.; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

2018-05-01

Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.

Electrodeposition and Thermoelectric Properties of Cu-Se Binary Compound Films

Science.gov (United States)

Yang, Mengqian; Shen, Zhengwu; Liu, Xiaoqing; Wang, Wei

2016-03-01

Cu-Se binary compound films have been prepared by electrodeposition from solutions containing CuSO4, H2SeO3, and H2SO4 and their composition, structure, and thermoelectric performance analyzed. Moving the depositing potential negatively increased the Cu content in the film, remarkably so for relatively low Cu2+ concentration in the solution. X-ray diffraction analysis showed that the phase composition of the films varied with their Cu content. Cu-Se binary compound films electrodeposited from solutions with different concentration ratios of CuSO4 to H2SeO3 showed two different phases: α-Cu2- x Se (monoclinic) with Se content in the range of 33.3 at.% to 33.8 at.%, and β-Cu2Se (cubic) with Se content in the range of 35.3 at.% to 36.0 at.%. The highest power factor for electrodeposited Cu2- x Se film was 0.13 mW/(K2 m) with Seebeck coefficient of 56.0 μV/K.

Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

International Nuclear Information System (INIS)

Tariq, G.H.; Anis-ur-Rehman, M.

2011-01-01

The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

International Nuclear Information System (INIS)

Marin, E.; Calderon, A.; Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J.; Saucedo, E.; Ruiz, C.M.

2006-01-01

CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 μm, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10 3 cm -1 because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several growth

Studying the initial stages of film electrodeposition of magnetic cobalt-tungsten alloys

International Nuclear Information System (INIS)

Rachinskas, V.S.; Orlovskaya, L.V.; Parfenov, V.A.; Yasulajtene, V.V.

1996-01-01

Initial stages of magnetic film electrodeposition by recording potentiodynamic polarization and j c ,t-curves, determination of surface structure of electrolytically deposited films by the method of XPS and study of thin coating properties have been considered. It is shown that at initial stage of electrodeposition of magnetic Co-W-films a sharp decrease in cathode process rate and formation of Co(OH) 2 , WO 3 and/or WO 4 2- occur on Cu-cathode surface. Electrodeposition of metallic magnetic Co-W-alloy, consisting of Co, W and containing basic compounds of co-deposited metals, takes place after a certain time period depending on deposition E c . 6 refs.; 3 figs

Defect characterization of CdTe thin films using a slow positron beam

International Nuclear Information System (INIS)

Neretina, S.; Grebennikov, D.; Mascher, P.; Hughes, R.A.; Weber, M.; Lynn, K.G.; Simpson, P.J.; Preston, J.S.

2007-01-01

Cadmium Telluride (CdTe) is the most well established II-VI compound largely due to its use as a photonic material. Existing applications, as well as those under consideration, are demanding increasingly stringent control of the material properties. The deposition of high quality thin films is of the utmost importance to such applications. In this regard, we present a report detailing the role of lattice mismatch in determining the film quality. Thin films were deposited on a wide variety of substrate materials using the pulsed laser deposition technique. Common to all substrates was the strong tendency towards the preferential alignment of CdTe's (111) planes parallel to the substrate's surface. X-ray diffraction analysis, however, revealed that the crystalline quality varied dramatically depending upon the substrate used with the best results yielding a single crystal film. This tendency also manifested itself in the surface morphology with higher structural perfection yielding smoother surfaces. Slow positron beam techniques revealed a strong correlation between the defect concentration and the degree of structural perfection. Simulations of the data using the POSTRAP 5 program were used to calculate the defect concentration in relative (atom -1 ) and absolute units and to determine the diffusion lengths of the positrons in the film. All of these characterization techniques point towards lattice mismatch as being the dominant mechanism in determining the quality of CdTe films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effects of CdCl2 treatment on the recrystallization and electro-optical properties of CdTe thin films

International Nuclear Information System (INIS)

Moutinho, H.R.; Al-Jassim, M.M.; Levi, D.H.; Dippo, P.C.; Kazmerski, L.L.

1998-01-01

The effects of CdCl 2 processing on the physical and electro-optical properties of CdTe were evaluated for thin films produced by physical vapor deposition and close-spaced sublimation (CSS). Two substrates (CdS and Indium - tin - oxide) were used with the physical vapor deposition (PVD) films specifically to isolate the effects of the Cd(S x Te 1-x ) alloy formed during the treatment of films deposited on CdS. The samples were analyzed by x-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence. The observed changes in microstructure were caused by recrystallization, which consisted of the nucleation and development of a new CdTe structure and subsequent grain growth. Nevertheless, for these processes to take place, it was necessary that enough lattice-strain energy was available in the films. For this reason, PVD films did recrystallize, while CSS films did not. For the first time, recrystallization was observed directly in AFM images of CdTe films and confirmed by XRD analysis, which indicated the existence of two lattice parameters in PVD samples treated at 350 degree C. For samples treated at 400 degree C, the CdCl 2 treatment improved the minority-carrier lifetime of the films by more than one order of magnitude. This improvement was attributed to the elimination of deep defect levels within the band gap of the CdTe films as a result of the treatment. The sulfur diffusion into CdTe films deposited on CdS, during the CdCl 2 treatment at 400 degree C, strongly affected the defect structure

Effect of mass density on surface morphology of electrodeposited manganese oxide films

Science.gov (United States)

Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

2018-05-01

This work focus on high surface area morphology of manganese oxide films which are currently required for electrochemical capacitor electrode to enhance their performance. Electrodeposition of manganese oxide films was carried out using Chronoamperometry for different deposition time ranging from 30 to 120 sec. Cronoamperomertic I-T integrated data have been used to analyze active mass of all electrodeposited films. Morphological study of the deposited films with different mass was carried out through scanning electron microscopy. Film deposited for 30 sec time show highest porous morphology than others. Manganese oxide films with high porosity are suitable for electrochemical capacitor electrode.

About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

Energy Technology Data Exchange (ETDEWEB)

Marin, E.; Calderon, A. [CICATA-IPN, Av. Legaria 694, 11500 Mexico D.F. (Mexico); Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Saucedo, E.; Ruiz, C.M. [Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

2006-07-01

CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 {mu}m, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10{sup 3} cm{sup -1} because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several

Embedded vertically aligned cadmium telluride nanorod arrays grown by one-step electrodeposition for enhanced energy conversion efficiency in three-dimensional nanostructured solar cells.

Science.gov (United States)

Wang, Jun; Liu, Shurong; Mu, Yannan; Liu, Li; A, Runa; Yang, Jiandong; Zhu, Guijie; Meng, Xianwei; Fu, Wuyou; Yang, Haibin

2017-11-01

Vertically aligned CdTe nanorods (NRs) arrays are successfully grown by a simple one-step and template-free electrodeposition method, and then embedded in the CdS window layer to form a novel three-dimensional (3D) heterostructure on flexible substrates. The parameters of electrodeposition such as deposition potential and pH of the solution are varied to analyze their important role in the formation of high quality CdTe NRs arrays. The photovoltaic conversion efficiency of the solar cell based on the 3D heterojunction structure is studied in detail. In comparison with the standard planar heterojunction solar cell, the 3D heterojunction solar cell exhibits better photovoltaic performance, which can be attributed to its enhanced optical absorption ability, increased heterojunction area and improved charge carrier transport. The better photoelectric property of the 3D heterojunction solar cell suggests great application potential in thin film solar cells, and the simple electrodeposition process represents a promising technique for large-scale fabrication of other nanostructured solar energy conversion devices. Copyright © 2017 Elsevier Inc. All rights reserved.

Preparation and characterization of pulsed laser deposited CdTe thin films at higher FTO substrate temperature and in Ar + O{sub 2} atmosphere

Energy Technology Data Exchange (ETDEWEB)

Ding, Chao; Ming, Zhenxun [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Li, Bing, E-mail: libing70@126.com [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Feng, Lianghuan [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Wu, Judy [Department of Physics and Astronomy, Kansas University, Lawrence 66045 (United States)

2013-06-20

Highlights: • CdTe films were deposited by PLD at high substrate temperatures (400 °C, 550 °C). • CdTe films were achieved under the atmosphere (1.2 Torr) of Ar mixed with O{sub 2}. • Deposited CdTe films were cubic phase and had strong (1 0 0) preferred orientation. • Scanning electron microscope (SEM) showed an average grain size of 0.3–0.6 μm. • The ultra-thin film (CdS/PLD-CdTe) solar cell with efficiency of 6.68% was made. -- Abstract: Pulsed laser deposition (PLD) is one of the promising techniques for depositing cadmium telluride (CdTe) thin films. It has been reported that PLD CdTe thin films were almost deposited at the lower substrate temperatures (<300 °C) under vacuum conditions. However, the poor crystallinity of CdTe films prepared in this way renders them not conducive to the preparation of high-efficiency CdTe solar cells. To obtain high-efficiency solar cell devices, better crystallinity and more suitable grain size are needed, which requires the CdTe layer to be deposited by PLD at high substrate temperatures (>400 °C). In this paper, CdTe layers were deposited by PLD (KrF, λ = 248 nm, 10 Hz) at different higher substrate temperatures (T{sub s}). Excellent performance of CdTe films was achieved at higher substrate temperatures (400 °C, 550 °C) under an atmosphere of Ar mixed with O{sub 2} (1.2 Torr). X-ray diffraction analysis confirmed the formation of CdTe cubic phase with a strong (1 0 0) preferential orientation at all substrates temperatures on 60 mJ laser energy. The optical properties of CdTe were investigated, and the band gaps of CdTe films were 1.51 eV and 1.49 eV at substrate temperatures of 400 °C and 550 °C, respectively. Scanning electron microscopy (SEM) showed an average grain size of 0.3–0.6 μm. Thus, under these conditions of the atmosphere of Ar + O{sub 2} (15 Torr) and at the relatively high T{sub s} (500 °C), an thin-film (FTO/PLD-CdS (100 nm)/PLD-CdTe (∼1.5 μm)/HgTe: Cu/Ag) solar cell with an

Cathodic electrodeposition of CuInSe sub 2 thin films

Energy Technology Data Exchange (ETDEWEB)

Guillen, C; Galiano, E; Herrero, J [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

1991-01-01

In order to study the preparation process of CuInSe{sub 2} thin films by a one-step electrodeposition method, thin films of the compound were prepared from aqueous citric acid (C{sub 6}H{sub 8}O{sub 7} . H{sub 2}O) plating baths onto titanium substrates. During electrodeposition, the bath composition and deposition potential were changed to obtain stoichiometric thin films. In general, close to stoichiometry, layers rich in selenium were observed, and this excess of selenium was removed after heat treatment. Best quality films were obtained after annealing at 400deg C during 15 min. X-ray diffraction showed the formation of CuInSe{sub 2} films, the chalcopyrite structure, at heating treatment temperatures higher than 350deg C. Optical measurements showed that the band gap of the deposited material was 0.99 eV. (orig.).

Electrodeposition of CdTe thin films onto n-Si(1 0 0): nucleation and growth mechanisms

International Nuclear Information System (INIS)

Gomez, H.; Henriquez, R.; Schrebler, R.; Cordova, R.; Ramirez, D.; Riveros, G.; Dalchiele, E.A.

2005-01-01

The mechanisms related to the initial stages of the nucleation and growth of cadmium telluride (CdTe) thin films on the rough face side of a (1 0 0) monocrystalline n-type silicon have been studied as a function of different potential steps that varied from an initial value of -0.200 V to values comprised between -0.515 and -0.600 V versus saturated calomel electrode (SCE). The analysis of the corresponding potentiostatic j/t transients suggests that the main phenomena involved at short times is the formation of a Te-Cd bi-layer (BL). For potentials below -0.540 V, the formation of this bi-layer can be considered independent of potential. At greater times, the mechanisms is controlled by two process: (i) progressive nucleation three dimensional charge transfer controlled growth (PN-3D) ct and (ii) progressive nucleation three dimensional diffusion controlled growth (PN-3D) diff , both giving account for the formation of conical and hemispherical nuclei, respectively. Ex situ AFM images of the surface seem to support these assumptions

Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

International Nuclear Information System (INIS)

Ede, Anthony

2001-01-01

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and γ-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are described in detail with preliminary results from the fabricated films presented. Attention is then turned to the CdS/CdTe films that are produced commercially for the photovoltaic industry. In this case the crystalline nature, surface topography and optical properties are investigated. A conclusion examines the progress that has been made towards the development of a large area fiat panel digital imaging technique. (author)

Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

Science.gov (United States)

Munshi, Amit Harenkumar

CdTe based photovoltaics have been commercialized at multiple GWs/year level. The performance of CdTe thin film photovoltaic devices is sensitive to process conditions. Variations in deposition temperatures as well as other treatment parameters have a significant impact on film microstructure and device performance. In this work, extensive investigations are carried out using advanced microstructural characterization techniques in an attempt to relate microstructural changes due to varying deposition parameters and their effects on device performance for cadmium telluride based photovoltaic cells deposited using close space sublimation (CSS). The goal of this investigation is to apply advanced material characterization techniques to aid process development for higher efficiency CdTe based photovoltaic devices. Several techniques have been used to observe the morphological changes to the microstructure along with materials and crystallographic changes as a function of deposition temperature and treatment times. Traditional device structures as well as advanced structures with electron reflector and films deposited on Mg1-xZnxO instead of conventional CdS window layer are investigated. These techniques include Scanning Electron Microscopy (SEM) with Electron Back Scattered Diffraction (EBSD) and Energy dispersive X-ray spectroscopy (EDS) to study grain structure and High Resolution Transmission Electron Microscopy (TEM) with electron diffraction and EDS. These investigations have provided insights into the mechanisms that lead to change in film structure and device performance with change in deposition conditions. Energy dispersive X-ray spectroscopy (EDS) is used for chemical mapping of the films as well as to understand interlayer material diffusion between subsequent layers. Electrical performance of these devices has been studied using current density vs voltage plots. Devices with efficiency over 18% have been fabricated on low cost commercial glass substrates

Electrodeposition of Manganese-Nickel Oxide Films on a Graphite Sheet for Electrochemical Capacitor Applications

Directory of Open Access Journals (Sweden)

Hae-Min Lee

2014-01-01

Full Text Available Manganese-nickel (Mn-Ni oxide films were electrodeposited on a graphite sheet in a bath consisting of manganese acetate and nickel chloride, and the structural, morphological, and electrochemical properties of these films were investigated. The electrodeposited Mn-Ni oxide films had porous structures covered with nanofibers. The X-ray diffractometer pattern revealed the presence of separate manganese oxide (g-MnO2 and nickel oxide (NiO in the films. The electrodeposited Mn-Ni oxide electrode exhibited a specific capacitance of 424 F/g in Na2SO4 electrolyte. This electrode maintained 86% of its initial specific capacitance over 2000 cycles of the charge-discharge operation, showing good cycling stability.

Surfactant assisted electrodeposition of MnO2 thin films: Improved supercapacitive properties

International Nuclear Information System (INIS)

Dubal, D.P.; Kim, W.B.; Lokhande, C.D.

2011-01-01

Highlights: → Effect of Triton X-100 on physico-chemical properties of MnO 2 films. → High supercapacitance of 345 F g -1 . → Charge-discharge, impedance spectroscopy. - Abstract: In order to obtain a high specific capacitance, MnO 2 thin films have been electrodeposited in the presence of a neutral surfactant (Triton X-100). These films were further characterized by means of X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, field emission scanning electron microscopy (FESEM) and contact angle measurement. The XRD studies revealed that the electrodeposited MnO 2 films are amorphous and addition of Triton X-100 does not change its amorphous nature. The electrodeposited films of MnO 2 in the presence of the Triton X-100 possess greater porosity and hence greater surface area in relation to the films prepared in the absence of the surfactant. Wettability test showed that the MnO 2 film becomes superhydrophilic from hydrophilic due to Triton X-100. Supercapacitance properties of MnO 2 thin films studied by cyclic voltammetry, galvanostatic charge-discharge cycling and impedance spectroscopy showed maximum supercapacitance for MnO 2 films deposited in presence of Triton X-100 is 345 F g -1 .

Magnetic vortex state and multi-domain pattern in electrodeposited hemispherical nanogranular nickel films

International Nuclear Information System (INIS)

Samardak, Alexander; Sukovatitsina, Ekaterina; Ognev, Alexey; Stebliy, Maksim; Davydenko, Alexander; Chebotkevich, Ludmila; Keun Kim, Young; Nasirpouri, Forough; Janjan, Seyed-Mehdi; Nasirpouri, Farzad

2014-01-01

Magnetic states of nickel nanogranular films were studied in two distinct structures of individual and agglomerated granules electrodeposited on n-type Si(1 1 1) surface from a modified Watts bath at a low pH of 2. Magnetic force microscopy and micromagnetic simulations revealed three-dimensional out-of-plane magnetic vortex states in stand-alone hemispherical granules and their arrays, and multi-domain patterns in large agglomerates and integrated films. Once the granules coalesce into small chains or clusters, the coercivity values increased due to the reduction of inter-granular spacing and strengthening of the magnetostatic interaction. Further growth leads to the formation of a continuous granulated film which strongly affected the coercivity and remanence. This was characterized by the domain wall nucleation and propagation leading to a stripe domain pattern. Magnetoresistance measurements as a function of external magnetic field are indicative of anisotropic magnetoresistance (AMR) for the continuous films electrodeposited on Si substrate. - Highlights: • Magnetic states of electrodeposited nickel in isolated spherical and agglomerated nanogranules, and a continuous film. • Preferential magnetization reversal mechanism in isolated granules is vortex state. • Micromagnetic simulations confirm the three-dimensional vortex. • Transition between the vortex state and multi-domain magnetic pattern causes a significant decrease in the coercive force. • Continuous nickel films electrodeposited on silicon substrate exhibit AMR whose magnitude increases with the film thickness

Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

Directory of Open Access Journals (Sweden)

M. M. Aliyu

2012-01-01

Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

Electrodeposition of zinc-doped silane films for corrosion protection of mild steels

International Nuclear Information System (INIS)

Wu Liankui; Hu Jiming; Zhang Jianqing

2012-01-01

Highlights: ► Metallic zinc is doped into organosilane films by one-step electrodeposition. ► The composite films exhibit the improved corrosion resistance of mild steels. ► Zinc-doping provides additional cathodic protection to the mild steels. - Abstract: Organosilane/zinc composite films are prepared by one-step electrodeposition onto cold-rolled steels for corrosion protection. Electrochemical impedance spectroscopy measurement, bulk solution immersion and wet heat tests all show that the composite films have improved corrosion performance. X-ray photoelectron spectroscopy measurement suggests the successful encapsulation of metallic zinc. The embedding of metallic zinc results in negative shift in open-circuit potential of the film-covered electrodes. Such cathodic protection effect given by the metallic zinc provides the improved corrosion resistance of the composite films.

Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells

Energy Technology Data Exchange (ETDEWEB)

Dzhafarov, T.D.; Yesilkaya, S.S.; Yilmaz Canli, N.; Caliskan, M. [Department of Physics, Yildiz Technical University, Davutpasa, 34210 Istanbul (Turkey)

2005-01-31

The effective diffusion coefficients of Cu for thermal and photodiffusion in the CdTe films have been estimated from resistivity versus duration of thermal or photoannealing curves. In the temperature range 60-200{sup o}C the effective coefficient of thermal diffusion (D{sub t}) and photodiffusion (D{sub ph}) are described as D{sub t}=7.3x10{sup -7}exp(-0.33/kT) and D{sub ph}=4.7x10{sup -8}exp(-0.20/kT). It is found that the diffusion doping of CdTe thin films by Cu at 400{sup o}C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.

Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-Film PV Devices; Annual Report, 26 January 1998-25 January 1999

Energy Technology Data Exchange (ETDEWEB)

Meyers, P. V. [ITN Energy Systems, Wheat Ridge, Colorado (US); Kee, R.; Wolden, C.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Aire, M.; Kestner, J. [Colorado School of Mines, Golden, Colorado (US); Fahrenbruch, A. [ALF, Inc., Stanford, California (US)

1999-09-30

ITN's 3-year project, titled ''Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High-Efficiency Thin-Film Photovoltaic (PV) Devices,'' has the overall objectives of improving thin-film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16%-efficient CdTe PV films, i.e., close-spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstrating APCVD of CdTe films, discovering fundamental mass-transport parameters, applying established engineering principles to the deposition of CdTe films, and verifying reactor design principles that could be used to design high-throughput, high-yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation, and ultimately, to higher device conversion efficiency and greater stability. Specifically, under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two-dimension measurements and modeling. Accomplishments of the first year of the APCVD subcontract include: selection of the Stagnant Flow Reactor design concept for the APCVD reactor, development of a detailed reactor design, performance of detailed numerical calculations simulating reactor performance, fabrication and installation of an APCVD reactor, performance of dry runs to verify reactor performance, performance of one-dimensional modeling of CdTe PV device performance, and development of a detailed plan for quantification of grain-boundary effects in polycrystalline CdTe devices.

Phosphorus introduction mechanism in electrodeposited cobalt films

International Nuclear Information System (INIS)

Kravtchenko, Jean-Francois

1973-01-01

The cathodic reduction of hypophosphite, phosphite and phosphate ions was studied using chrono-potentiometry and voltammetry. Then cobalt was deposited at constant current from a bath containing one of these three compounds. The current, while giving an electrodeposition of cobalt, also enhances at the same time a chemical deposition of cobalt. It is shown that high coercive forces in cobalt films are much more related to this chemical deposition than to the simple fact that the films contain some phosphorus. (author) [fr

Surfactant assisted electrodeposition of MnO{sub 2} thin films: Improved supercapacitive properties

Energy Technology Data Exchange (ETDEWEB)

Dubal, D.P. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India); School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Kim, W.B. [School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Lokhande, C.D., E-mail: l_chandrakant@yahoo.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India)

2011-10-13

Highlights: > Effect of Triton X-100 on physico-chemical properties of MnO{sub 2} films. > High supercapacitance of 345 F g{sup -1}. > Charge-discharge, impedance spectroscopy. - Abstract: In order to obtain a high specific capacitance, MnO{sub 2} thin films have been electrodeposited in the presence of a neutral surfactant (Triton X-100). These films were further characterized by means of X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, field emission scanning electron microscopy (FESEM) and contact angle measurement. The XRD studies revealed that the electrodeposited MnO{sub 2} films are amorphous and addition of Triton X-100 does not change its amorphous nature. The electrodeposited films of MnO{sub 2} in the presence of the Triton X-100 possess greater porosity and hence greater surface area in relation to the films prepared in the absence of the surfactant. Wettability test showed that the MnO{sub 2} film becomes superhydrophilic from hydrophilic due to Triton X-100. Supercapacitance properties of MnO{sub 2} thin films studied by cyclic voltammetry, galvanostatic charge-discharge cycling and impedance spectroscopy showed maximum supercapacitance for MnO{sub 2} films deposited in presence of Triton X-100 is 345 F g{sup -1}.

Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

Directory of Open Access Journals (Sweden)

Zhouling Wang

2014-01-01

Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

Super Nonlinear Electrodeposition-Diffusion-Controlled Thin-Film Selector.

Science.gov (United States)

Ji, Xinglong; Song, Li; He, Wei; Huang, Kejie; Yan, Zhiyuan; Zhong, Shuai; Zhang, Yishu; Zhao, Rong

2018-03-28

Selector elements with high nonlinearity are an indispensable part in constructing high density, large-scale, 3D stackable emerging nonvolatile memory and neuromorphic network. Although significant efforts have been devoted to developing novel thin-film selectors, it remains a great challenge in achieving good switching performance in the selectors to satisfy the stringent electrical criteria of diverse memory elements. In this work, we utilized high-defect-density chalcogenide glass (Ge 2 Sb 2 Te 5 ) in conjunction with high mobility Ag element (Ag-GST) to achieve a super nonlinear selective switching. A novel electrodeposition-diffusion dynamic selector based on Ag-GST exhibits superior selecting performance including excellent nonlinearity (<5 mV/dev), ultra-low leakage (<10 fA), and bidirectional operation. With the solid microstructure evidence and dynamic analyses, we attributed the selective switching to the competition between the electrodeposition and diffusion of Ag atoms in the glassy GST matrix under electric field. A switching model is proposed, and the in-depth understanding of the selective switching mechanism offers an insight of switching dynamics for the electrodeposition-diffusion-controlled thin-film selector. This work opens a new direction of selector designs by combining high mobility elements and high-defect-density chalcogenide glasses, which can be extended to other materials with similar properties.

High short-circuit current density CdTe solar cells using all-electrodeposited semiconductors

Energy Technology Data Exchange (ETDEWEB)

Echendu, O.K., E-mail: oechendu@yahoo.com; Fauzi, F.; Weerasinghe, A.R.; Dharmadasa, I.M.

2014-04-01

CdS/CdTe and ZnS/CdTe n–n heterojunction solar cells have been fabricated using all-electrodeposited semiconductors. The best devices show remarkable high short-circuit current densities of 38.5 mAcm{sup −2} and 47.8 mAcm{sup −2}, open-circuit voltages of 630 mV and 646 mV and conversion efficiencies of 8.0% and 12.0% respectively. The major strength of these device structures lies in the combination of n–n heterojunction with a large Schottky barrier at the n-CdTe/metal back contact which provides the required band bending for the separation of photo-generated charge carriers. This is in addition to the use of a high quality n-type CdTe absorber layer with high electron mobility. The potential barrier heights estimated for these devices from the current–voltage characteristics exceed 1.09 eV and 1.13 eV for CdS/CdTe and ZnS/CdTe cells respectively. The diode rectification factors of both devices are in excess of four orders of magnitude with reverse saturation current densities of 1.0 × 10{sup −7} Acm{sup −2} and 4.0 × 10{sup −7} Acm{sup −2} respectively. These all-electrodeposited solar cell device structures are currently being studied and developed as an alternative to the well-known p–n junction structures which utilise chemical bath-deposited CdS. The preliminary material growth, device fabrication and assessment results are presented in this paper. - Highlights: • Two-electrode deposition. • High J{sub sc} Schottky barrier solar cells. • CdCl{sub 2} + CdF{sub 2} treatment.

CATHODIC ELECTRODEPOSITION OF Cu 4 SnS 4 THIN FILMS FROM ACIDIC SOLUTION

Directory of Open Access Journals (Sweden)

Anuar Kassim

2017-11-01

Full Text Available In this work the synthesis of copper tin sulfide thin films by electrodeposition is carried out. The films were deposited onto ITO glass substrates from anaqueous solution bath containingcopper sulfate, tin chloride and sodium thiosulfate at pH 1 and room temperature. Prior to the deposition, a cyclic voltammetry experiment was carried out between two potential limits (+1000 to -1000 mV versus Ag/AgCl to probe the effect of the applied potential and to determine the most likely suitable electrodeposition potential for the deposition of copper tin sulfide. The deposition was attempted at various cathodic potentials such as -400, -600, -800, -1000 mV to determine the optimum deposition potential. The films have been characterized by techniques such as optical absorption, X-ray diffraction and atomic force microscopy. The XRD patterns show that the films are polycrystalline with orthorhombic structure. The AFMstudies reveal the electrodeposited films were smooth, compact and uniform at deposition potentials of –600 mV versus Ag/AgCl. The direct optical band-gap energy was obtained to be 1.58 eV.

Fabrication and magnetization measurement of Ni thin films on silicon substrate by electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Tang Yang [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)], E-mail: dxzhao2000@yahoo.com.cn; Shen Dezhen; Zhang Jiying; Li Binghui; Lu Youming; Fan Xiwu [Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

2008-02-29

Ni thin films were electrodeposited on n-Si (100) substrate from the electrolytes containing Ni(CH{sub 3}COO){sub 2} and CH{sub 3}COONH{sub 4} at room temperature. The scanning electron microscope images of the films reveals the uniform distribution of the nickel all over the substrate surface, which illustrates that the fine Ni films on large scales could be obtained through the method of electrodeposition. Vibrating sample magnetometer measurement with the applied field parallel to the surface shows obvious hysteresis loops of the magnetic thin films. The morphology and magnetism of the Ni thin films evolves with the deposition time increasing. The effect of deposition conditions on the properties of the Ni thin films is investigated.

Characterisation of electrodeposited polycrystalline uranium dioxide thin films on nickel foil for industrial applications

International Nuclear Information System (INIS)

Adamska, A.M.; Bright, E. Lawrence; Sutcliffe, J.; Liu, W.; Payton, O.D.; Picco, L.; Scott, T.B.

2015-01-01

Polycrystalline uranium dioxide thin films were grown on nickel substrates via aqueous electrodeposition of a precursor uranyl salt. The arising semiconducting uranium dioxide thin films exhibited a tower-like morphology, which may be suitable for future application in 3D solar cell applications. The thickness of the homogenous, tower-like films reached 350 nm. Longer deposition times led to the formation of thicker (up to 1.5 μm) and highly porous films. - Highlights: • Electrodeposition of polycrystalline UO_2 thin films • Tower-like morphology for 3D solar cell applications • Novel technique for separation of heavy elements from radioactive waste streams

Luminous composite ultrathin films of CdTe quantum dots/silk fibroin co-assembled with layered doubled hydroxide: Enhanced photoluminescence and biosensor application

Directory of Open Access Journals (Sweden)

Muhammad Sohail Haroone

2018-06-01

Full Text Available Quantum dots (QDs luminescent films are extensively applied to optoelectronics and optical devices. However, QDs aggregation results in the quenching of their fluorescence property which limits their practical applications to a greater extent. In order to resolve this issue, 3-mercaptopropionic acid (3-MPA functionalized Cadmium Tellurium (CdTe QDs were stabilized by silk fibroin (SB and co-assembled with layered doubled hydroxide (LDH to form (QDs@SF/LDHn ultrathin films (UTFs via the layer-by-layer (LBL technique. UV–Vis absorption and fluorescence spectroscopy showed a stepwise and normal growth of the films upon increasing the number of deposition cycles. XRD and AFM studies confirmed the formation of a periodic layered structure and regular surface morphology of the thin films. As compared to (CdTe QDs/LDHnUTFs, the (CdTe QDs@SF/LDHnUTFs displayed fluorescence enhancement and longer fluorescent lifetime, both in solid states and aqueous solutions. Furthermore compared with the solution state, the fluorescence enhancement of SF-RC and SF-β are, respectively, 7 times and 17 times in the (CdTe QDs@SF/LDHn UTFs, indicating that the LDH nanosheets favor the fluorescence enhancement effect on the CdTe QDs@SF. The fabricated materials displayed fluorescence response to a biological molecule such as immune globulin, lgG. Thus, the (CdTe QDs@SF/LDHn UTFs has a potential to be used as biosensor. Keywords: CdTe quantum dots, Silk fibroin, Layered doubled hydroxide, Co-assembly, Fluorescence enhancement

CATHODIC ELECTRODEPOSITION OF Cu 4 SnS 4 THIN FILMS FROM ACIDIC SOLUTION

Directory of Open Access Journals (Sweden)

Anuar Kassim

2017-11-01

Full Text Available In this work the synthesis of copper tin sulfide thin films by electrodeposition is carried out. The films were deposited onto ITO glass substrates from an aqueous solution bath containing copper sulfate, tin chloride and sodium thiosulfate at pH 1 and room temperature. Prior to the deposition, a cyclic voltammetry experiment was carried out  between two potential limits (+1000 to -1000 mV versus Ag/AgCl to probe the effect of  the applied potential and to determine the most likely suitable electrodeposition potential  for the deposition of copper tin sulfide. The deposition was attempted at various cathodic potentials such as -400, -600, -800, -1000 mV to determine the optimum deposition  potential. The films have been characterized by techniques such as optical absorption, Xray diffraction  and  atomic  force  microscopy. The XRD patterns show that the films are polycrystalline with orthorhombic structure. The AFM studies reveal the electrodeposited films were smooth, compact and uniform at deposition potentials of –600 mV versus  Ag/AgCl. The direct optical band-gap energy was obtained to be 1.58 eV.

Electrodeposited Cu2ZnSnS4 thin films

CSIR Research Space (South Africa)

Valdes, M

2014-05-01

Full Text Available Cu(sub2)ZnSnS(sub4)(CZTS) thin films have been prepared using Electrochemical Atomic Layer Deposition (EC-ALD)and also by one-step conventional constant potential electrodeposition. Optimal deposition conditionswere investigated using cyclic...

Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

International Nuclear Information System (INIS)

Wang Qingtao; Wang Guanzhong; Jie Jiansheng; Han Xinhai; Xu Bo; Hou, J.G.

2005-01-01

(001)-oriented ZnO films on Zn substrates were synthesized by cathodic electrodeposition from an aqueous solution composed only of 0.05 M zinc nitrate at 65 deg. C. A bound exciton emission band around 3.34 eV along with three longitudinal optical (LO) phonon replicas and an intensive broad emission band around 2.17 eV were observed from the photoluminescence (PL) spectra of ZnO films prepared at more positive potential (- 0.6∼- 0.8 V). When more negative potential (- 1.0∼- 1.4 V) was applied, the ultraviolet emission band disappeared. These results indicate that more positive electrodeposition potential favors the high quality ZnO film growth. The PL spectra of the annealed ZnO films prepared at more positive electrodeposition potentials - 0.6∼- 1.0 V exhibit the ultraviolet emission at 3.35 eV and a negligibly weak emission from defects. Annealing resulted in the enhancement and sharpening of the excitonic emission band and decrease of the deep level emission. The bandgap (E g ) of the ZnO film prepared at - 1.0 V on indium tin oxide (ITO) substrate decreased from 3.56 to 3.29 eV due to the removing of Zn(OH) 2 from the film after annealing

Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Franczak, Agnieszka, E-mail: agnieszka.franczak@mtm.kuleuven.be [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Department of Materials Science (MTM), KU Leuven, Kasteelpark Arenberg 44, 3001 Haverlee (Leuven) (Belgium); Levesque, Alexandra [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); Zabinski, Piotr [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Li, Donggang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, 314 Box, 110004 Shenyang (China); Czapkiewicz, Maciej [Department of Electronics, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Kowalik, Remigiusz [Laboratory of Physical Chemistry and Electrochemistry, Faculty of Non-Ferrous Metals, AGH University of Science and Technology, al. A. Mickiewicza 30, 30059 Krakow (Poland); Bohr, Frédéric [Laboratoire d’Ingénierie et Sciences des Matériaux (LISM EA 4695), Université de Reims Champagne-Ardenne, UFR Sciences et Naturelles, Bat. 6, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France); and others

2015-07-15

The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits.

Growth and magnetic properties dependence of the Co–Cu/Cu films electrodeposited under high magnetic fields

International Nuclear Information System (INIS)

Franczak, Agnieszka; Levesque, Alexandra; Zabinski, Piotr; Li, Donggang; Czapkiewicz, Maciej; Kowalik, Remigiusz; Bohr, Frédéric

2015-01-01

The present work is focused on the investigations of magnetic properties dependence on microstructure of Co–Cu/Cu films electrodeposited under superimposed high magnetic field. The experimental results indicate a strong effect of an external magnetic field on the morphology of deposited films, more precisely on the Co:Cu ratio that determines the film growth. It is shown that the Co–Cu/Cu films electrodeposited without superimposed magnetic field consisted of two clearly visible features: compact film with incorporated granular particles. Under a superimposed external high magnetic field the privilege growth of the particles was induced. As a consequence, development of the well-defined branched structure of Co–Cu/Cu film was observed. In contrary, the phase compositional investigations do not reveal any changes in the phase formation during electrodeposition under magnetic field conditions. Thus, it is assumed that a strong growth of Co–Cu/Cu films in (111) direction under magnetic or non-magnetic electrodeposition conditions is related with the growth of Cu (111) plane and embedded into it some of the Co fcc atoms of same (111) orientation, as well as the Co hcp atoms that grows in the (002) direction. This non-equilibrium growth of Co–Cu/Cu films under magnetic deposition conditions affects strongly the magnetic properties of deposited films, revealing that films obtained under magnetic fields higher than 3 T were no more magnetic materials. - Highlights: • Co–Cu/Cu electrodeposits were obtained at elevated temperature under HMFs. • The effects of HMFs on microstructure and magnetic properties were investigated. • Interesting morphological changes due to HMFs has been observed. • Changes in Co:Cu ratio due to HMFs modified the magnetic properties of deposits

Deposition of CdTe films under microgravity: Foton M3 mission

Energy Technology Data Exchange (ETDEWEB)

Benz, K.W.; Croell, A. [Freiburger Materialforschungszentrum FMF, Albert-Ludwigs-Universitaet Freiburg (Germany); Zappettini, A.; Calestani, D. [CNR Parma, Instituto Materiali Speciali per Elettronica e Magnetismo IMEM, Fontani Parma (Italy); Dieguez, E. [Universidad Autonoma de Madrid (Spain). Departamento de Fisica de Materiales; Carotenuto, L.; Bassano, E. [Telespazio Napoli, Via Gianturco 31, 80146 Napoli (Italy); Fiederle, M.

2009-10-15

Experiments of deposition of CdTe films have been carried out under microgravity in the Russian Foton M3 mission. The influence of gravity has been studied with these experiments and compared to the results of simulations. The measured deposition rate could be confirmed by the theoretical results for lower temperatures. For higher temperatures the measured thickness of the deposited films was larger compared to the theoretical data. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Influence of citrate ions as complexing agent for electrodeposition of CuInSe{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Chraibi, F. [Universite Libre de Bruxelles (Belgium). Service de Sciences des Materiaux et Electrochimie; Universite Mohammed 5, Rabat (Morocco). Dept. de Physique; Fahoume, M.; Ennaoui, A. [Universite Mohammed 5, Rabat (Morocco). Dept. de Physique; Delplancke, J.L. [Universite Libre de Bruxelles (Belgium). Service de Sciences des Materiaux et Electrochimie

2001-08-16

The preparation of CuInSe{sub 2} thin films by electrodeposition is studied. The effect of sodium citrate (Na{sub 3}C{sub 6}H{sub 5}O{sub 7}) as complexing agent on the electrodeposition of pure copper, indium, selenium and of their ternary alloy is emphasized. Cathodic shifts of the copper and selenium electrodeposition potentials with increasing citrate concentration are observed. On the contrary, the presence of citrate in the electrolyte does not change the indium electrodeposition potential but improves its crystallinity. The surface morphology and the composition of the deposited films are characterized by scanning electron microscopy (SEM). The texture of the deposits and their compositions are analyzed by X-ray diffraction. The formation of CuInSe{sub 2} films with a chalcopyrite structure and good stoichiometry is observed. (orig.)

Preparation and characterization of Cu2SnS3 thin films by electrodeposition

Science.gov (United States)

Patel, Biren; Narasimman, R.; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

Cu2SnS3 thin films were electrodeposited on F:SnO2/Glass substrates at room temperature by using aqueous solution. Copper and tin were first electrodeposited from single bath and post annealed in the presence of sulphur atmosphere to obtain the Cu2SnS3 phase. The Cu2SnS3 phase with preferred orientation along the (112) crystal direction grows to greater extent by the post annealing of the film. Raman analysis confirms the monoclinic crystal structure of Cu2SnS3 with principle mode of vibration as A1 (symmetric breathing mode) corresponding to the band at 291 cm-1. It also reveals the benign coexistence of orthorhombic Cu3SnS4 and Cu2SnS7 phases. Optical properties of the film show direct band gap of 1.25 eV with a high absorption coefficient of the order of 104 cm-1 in the visible region. Photo activity of the electrodeposited film was established in two electrode photoelectro-chemical cell, where an open circuit voltage of 91.6 mV and a short circuit current density of 10.6 µA/cm2 were recorded. Fabrication of Cu2SnS3 thin film heterojunction solar cell is underway.

Adsorption of organic layers over electrodeposited magnetite (Fe3O4) thin films

International Nuclear Information System (INIS)

Cortes, M.; Gomez, E.; Sadler, J.; Valles, E.

2011-01-01

Research highlights: → Adherent low roughness magnetite films ranging from 80 nm to 3.75 μm-thick were electrodeposited on Au/glass substrates under galvanostatic control. → X-ray diffraction and magnetic measurements corroborates the purity of the electrodeposited magnetite. → Both dodecanethiol and oleic acid are shown to adsorb on the magnetite prepared at low temperature, significantly inducing the hydrophobicity of the surface. → Contact angle and voltammetric measurements, as well as XPS confirm the monolayers formation. - Abstract: The formation of monolayers of two organic compounds (oleic acid and dodecanethiol) over magnetite films was studied. Magnetite films ranging from 80 nm to 3.75 μm-thick were electrodeposited on Au on glass substrates under galvanostatic control, with deposition parameters optimized for minimum surface roughness. Films were characterised by SEM and AFM, showing granular deposits with a low rms roughness of 5-40 nm measured over an area of 1 μm 2 . The growth rate was estimated by measuring cross-sections of the thin films. Pure magnetite with an fcc structure is observed in XRD diffractograms. The adsorption of both oleic acid and dodecanethiol on the magnetite films was tested by immersing them in ethanol solutions containing the organic molecules, for different deposition time, temperature and cleaning procedure. Monolayer formation in both cases was studied by contact angle and voltammetric measurements, as well as XPS.

Neutron reflectivity of electrodeposited thin magnetic films

International Nuclear Information System (INIS)

Cooper, Joshaniel F.K.; Vyas, Kunal N.; Steinke, Nina-J.; Love, David M.; Kinane, Christian J.; Barnes, Crispin H.W.

2014-01-01

Highlights: • Electrodeposited magnetic bi-layers were measured by polarised neutron reflectivity. • When growing a CoNiCu alloy from a single bath a Cu rich region is initially formed. • This Cu rich region is formed in the first layer but not subsequent ones. • Ni deposition is inhibited in thin film growth and Co deposits anomalously. • Alloy magnetism and neutron scattering length give a self-consistent model. - Abstract: We present a polarised neutron reflectivity (PNR) study of magnetic/non-magnetic (CoNiCu/Cu) thin films grown by single bath electrodeposition. We find that the composition is neither homogeneous with time, nor consistent with bulk values. Instead an initial, non-magnetic copper rich layer is formed, around 2 nm thick. This layer is formed by the deposition of the dilute, but rapidly diffusing, Cu 2+ ions near the electrode surface at the start of growth, before the region is depleted and the deposition becomes mass transport limited. After the region has been depleted, by growth etc., this layer does not form and thus may be prevented by growing a copper buffer layer immediately preceding the magnetic layer growth. As has been previously found, cobalt deposits anomalously compared to nickel, and even inhibits Ni deposition in thin films. The layer magnetisation and average neutron scattering length are fitted independently but both depend upon the alloy composition. Thus these parameters can be used to check for model self-consistency, increasing confidence in the derived composition

Influence of Surface Roughness and Agitation on the Morphology of Magnetite Films Electrodeposited on Carbon Steel Substrates

Directory of Open Access Journals (Sweden)

Soon-Hyeok Jeon

2016-11-01

Full Text Available In this work, we investigated the effects of surface roughness and agitation on the morphology of magnetite films electrodeposited from alkaline Fe(III-triethanolamine (TEA solutions on carbon steel substrates. The surface roughness of the carbon steel substrates was maintained in the range of 1.64–0.06 μm by using mechanical grinding and polishing methods. The agitation speed was set at 0 and 900 rpm during the electrodeposition process. The particle size and surface roughness value of the magnetite films gradually decreased with decreasing substrate roughness. However, the influence of the substrate roughness on the thickness of the magnetite film was negligible. The morphology of the magnetite film fabricated at 900 rpm appeared to be highly faceted compared to that of the magnetite film produced at 0 rpm. The thickness and surface roughness of the magnetite film significantly increased with the agitation speed, which also significantly affected the electrodeposition efficiency. The effects of substrate surface roughness and agitation on the morphology of magnetite films electrodeposited on carbon steel substrates were also discussed. The obtained results provide critical information for the simulation of magnetite deposits on carbon steel pipes in the secondary systems of nuclear power plants.

Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

Science.gov (United States)

Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

2014-08-01

Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

Electrodeposition route to synthesize cigs films – an economical way ...

African Journals Online (AJOL)

user

Unlike binary conductors CIGS film preparation needs highly ... This argument also holds well in forming a hetero-junction partner CdS ..... successfully electrodeposited onto indium tin oxide substrate and it is recently reported (Li et al., 2010).

CdTe Photovoltaics for Sustainable Electricity Generation

Science.gov (United States)

Munshi, Amit; Sampath, Walajabad

2016-09-01

Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

Photovoltaic properties of in-doped CDTE thin films deposited on metallic substrates

International Nuclear Information System (INIS)

Wagah F Mohamad; Khalid K Mohammed

2006-01-01

CDTE is a promising photovoltaic material due to its nearly optimum band gap and high optical absorption coefficient. This study looks into the effect of indium doping of the CdTe thin film deposited on stainless steel substrate. The conventional cells are usually manufactured on glass substrate and offer no weight advantage over single crystal cells. Since the metal foil support can be as thin as (40-60) μm and the weight saving is significant. The spectral response of the photo current with and without indium doping was studied in detail and compared with theory. The sub gap response of the resulted structure is particularly strong and extends to wavelengths up to 1000 nm

Type conversion, contacts, and surface effects in electroplated CdTe films

International Nuclear Information System (INIS)

Basol, B.M.; Ou, S.S.; Stafsudd, O.M.

1985-01-01

Efficient electroplated CdS/CdTe solar cells can be fabricated by heat treating and type-converting the n-CdTe films deposited on CdS layers. In this paper, various mechanisms which may give rise to the conversion of electroplated CdTe films from n to p type are investigated. It is concluded that Cd-vacancy generation is the main mechanism of type conversion. Possible effects of oxygen on this mechanism are also discussed. Evaporated Au contacts to electroplated p-CdTe films were studied. It was found that the Au contacts depleted the excess Te present on the surface of Br 2 -methanol etched p-CdTe films. Oxygen was found to affect the electrical characteristics of such contacts

Optical characterization of epitaxial single crystal CdTe thin films on Al{sub 2}O{sub 3} (0001) substrates

Energy Technology Data Exchange (ETDEWEB)

Jovanovic, S.M.; Devenyi, G.A., E-mail: devenyga@mcmaster.ca; Jarvis, V.M.; Meinander, K.; Haapamaki, C.M.; Kuyanov, P.; Gerber, M.; LaPierre, R.R.; Preston, J.S.

2014-11-03

The optoelectronic properties of single crystal CdTe thin films were investigated by photoluminescence spectroscopy, photoreflectance spectroscopy and variable angle spectroscopic ellipsometry. The room temperature bandgap was measured to be 1.51 eV and was consistent between spectroscopic measurements and previously reported values. Breadth of bandgap emission was consistent with high quality material. Low temperature photoluminescence spectra indicated a dominant emission consistent with bound excitons. Emissions corresponding to self-compensation defects, doping and contaminants were not found. Variable angle spectroscopic ellipsometry measurements over the near-UV to infrared range demonstrated sharp resonance peaks. All spectroscopic measurements indicate high quality thin film material of comparable or better quality than bulk CdTe. - Highlights: • High quality epitaxial CdTe thin films were grown. • Two dimensional X-ray diffraction characterization confirmed single crystal material. • Photoluminescence indicated low defect density when compared to bulk single crystals. • Optical characterization indicated the presence of room temperature excitons.

Electrodeposited cadmium selenide films for solar cells; Electrodeposition de couches minces de CdSe: Application a la conversion photovoltaique

Energy Technology Data Exchange (ETDEWEB)

Bnamar, E.; Rami, M.; Fahoume, M.; Chraibi, F.; Ennaoui, A. [Universite Mohammed 5, Rabat (Morocco). Faculte des Sciences; Fahoume, M. [Universite Ibn Tofail, Faculte des Sciences, Kenitra (Morocco)

1998-01-01

Solar cells based on II-IV semiconductors are among the leading candidates for low-cost photovoltaic conversion of solar energy due to their high absorption coefficients and therefore the low materials consumption for their production. The synthesis of polycrystalline Cd Se thin films by cathodic electrodeposition on conducting substrates is described in this paper. Electrodeposition involves potentiostatic reduction from an acid aqueous bath. The influence of bath temperature and deposition potential on the crystallinity is discussed. For optimized deposition parameters, the XRD patterns reveal cubic and hexagonal Cd Se. Electron probe microanalysis shows an excess of Se in the samples. Photoelectrochemical studies of the films in aqueous polysulfide allowed us to determine the photovoltaic properties e.g.: semiconducting type, short-circuit current, open circuit voltage and fill factor. (authors) 5 refs.

Electrodeposition of near stoichiometric CuInSe2 thin films for photovoltaic applications

Science.gov (United States)

Chandran, Ramkumar; Mallik, Archana

2018-03-01

This work investigates on the single step electrodeposition of quality CuInSe2 (CIS) thin film absorber layer for photovoltaics applications. The electrodeposition was carried using an aqueous acidic solution with a pH of 2.25. The deposition was carried using a three electrode system in potentiostatic conditions for 50 minutes. The as-deposited and nitrogen (N2) annealed films were characterized using XRD, FE-SEM and Raman spectroscopy. It has been observed that the SDS has the tendency to suppress the copper selenide (CuxSe) secondary phase which is detrimental to the device performance.

Supply risks associated with CdTe and CIGS thin-film photovoltaics

International Nuclear Information System (INIS)

Helbig, Christoph; Bradshaw, Alex M.; Kolotzek, Christoph; Thorenz, Andrea; Tuma, Axel

2016-01-01

Highlights: • Supply risks associated with thin film photovoltaic technologies are considered. • Eleven supply risk indicators are used to evaluate Cd, Te, Cu, In, Ga, Se and Mo. • Indicator weighting based on peer assessment and an Analytic Hierarchy Process. • Various possibilities for the aggregation of elemental supply risks discussed. • Aggregated results show a marginally lower supply risk for CdTe than for CIGS. - Abstract: As a result of the global warming potential of fossil fuels there has been a rapid growth in the installation of photovoltaic generating capacity in the last decade. While this market is dominated by crystalline silicon, thin-film photovoltaics are still expected to make a substantial contribution to global electricity supply in future, due both to lower production costs and to recent increases in conversion efficiency. At present, cadmium telluride (CdTe) and copper-indium-gallium diselenide (CuIn_xGa_1_−_xSe_2) seem to be the most promising materials and currently have a share of ≈9% of the photovoltaic market. An expected stronger market penetration by these thin-film technologies raises the question as to the supply risks associated with the constituent elements. Against this background, we report here a semi-quantitative, relative assessment of mid- to long-term supply risk associated with the elements Cd, Te, Cu, In, Ga, Se and Mo. In this approach, the supply risk is measured using 11 indicators in the four categories “Risk of Supply Reduction”, “Risk of Demand Increase”, “Concentration Risk” and “Political Risk”. In a second step, the single indicator values, which are derived from publicly accessible databases, are weighted relative to each other specifically for the case of thin film photovoltaics. For this purpose, a survey among colleagues and an Analytic Hierarchy Process (AHP) approach are used, in order to obtain a relative, element-specific value for the supply risk. The aggregation of these

Dual-bath electrodeposition of n-type Bi–Te/Bi–Se multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Matsuoka, Ken; Okuhata, Mitsuaki; Takashiri, Masayuki, E-mail: takashiri@tokai-u.jp

2015-11-15

N-type Bi–Te/Bi–Se multilayer thin films were prepared by dual-bath electrodeposition. We varied the number of layers from 2 to 10 while the total film thickness was maintained at approximately 1 μm. All the multilayer films displayed the X-ray diffraction peaks normally observed from individual Bi{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3} crystal structures, indicating that both phases coexist in the multilayer. The cross-section of the 10-layer Bi–Te/Bi–Se film was composed of stacked layers with nano-sized grains but the boundaries between the layers were not planar. The Seebeck coefficient was almost constant throughout the entire range of our experiment, but the electrical conductivity of the multilayer thin films increased significantly as the number of layers was increased. This may be because the electron mobility increases as the thickness of each layer is decreased. As a result of the increased electrical conductivity, the power factor also increased with the number of layers. The maximum power factor was 1.44 μW/(cm K{sup 2}) for the 10-layer Bi–Te/Bi–Se film, this was approximately 3 times higher than that of the 2-layer sample. - Highlights: • N-type Bi–Te/Bi–Se multilayer thin films were deposited by electrodeposition. • We employed a dual-bath electrodeposition process for preparing the multilayers. • The Bi–Te/Bi–Se film was composed of stacked layers with nano-sized grains. • The electrical conductivity increased as the number of layers was increased. • The power factor improved by 3 times as the number of layers was increased.

Development of Electrodeposited CIGS Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-09-357

Energy Technology Data Exchange (ETDEWEB)

Neale, Nathan [National Renewable Energy Lab. (NREL), Golden, CO (United States)

2016-09-01

At present, most PV materials are fabricated by vacuum technologies. Some of the many disadvantages of vacuum technology are complicated instrumentation, material waste, high cost of deposition per surface area, and instability of some compounds at the deposition temperature. Solution-based approaches for thin-film deposition on large areas are particularly desirable because of the low capital cost of the deposition equipment, relative simplicity of the processes, ease of doping, uniform deposition on a variety of substrates (including interior and exterior of tubes and various nonplanar devices), and potential compatibility with high-throughput (e.g., roll-to-roll) processing. Of the nonsilicon solar photovoltaic device modules that have been deployed to date, those based on the n-CdS/p-CdTe is a leading candidate. Two features in the optical characteristics of CdTe absorber are particularly attractive for photovoltaic conversion of sunlight; (a) its energy bandgap of 1.5 eV, which provides an optimal match with the solar spectrum and thus facilitates its efficient utilization and (b) the direct mode of the main optical transition which results in a large absorption coefficient and turn permits the use of thin layer (1-2 um) of active material. Thin films of CdTe required for these devices have been fabricated by a variety of methods (e.g., vapor transport deposition, vacuum deposition, screen printing and close-spaced sublimation). Electrodeposition is another candidate deserves more attention. This project will focus on delivering low-cost, high efficiency electrodeposited CdTe-based device.

Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

Science.gov (United States)

Chander, Subhash; Dhaka, M. S.

2018-03-01

The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO) substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111) while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells.

Electrodeposition of enzymes-integrated mesoporous composite films by interfacial templating: A paradigm for electrochemical biosensors

International Nuclear Information System (INIS)

Wang, Dongming; Tan, Yiwei

2014-01-01

The development of nanostructured electrodes for electrochemical biosensors is of significant interest for modern detection, portable devices, and enhanced performance. However, development of such sensors still remains challenging due to the time-consuming, detriment-to-nature, and costly modifications of both electrodes and enzymes. In this work, we report a simple one-step approach to fabricating high-performance, direct electron transfer (DET) based nanoporous enzyme-embedded electrodes by electrodeposition coupled with recent progress in potential-controlled interfacial surfactant assemblies. In contrast to those previously electrodeposited mesoporous materials that are not bioactive, we imparted the biofunctionality to electrodeposited mesoporous thin films by means of the amphiphilic phospholipid templates strongly interacting with enzymes. Thus, phospholipid-templated mesoporous ZnO films covalently inlaid with the pristine enzymes were prepared by simple one-step electrodeposition. We further demonstrate two examples of such hybrid film electrodes embedded with alcohol dehydrogenase (ADH) and glucose oxidase (GOx), which are effectively employed as electrochemical biosensors for amperometric sensing of ethanol and glucose without using any electron relays. The favorable mass transport and large contact surface area provided by nanopores play an important role in improving the performance of these two biosensors, such as excellent sensitivities, low detection limits, and fast response. The matrix mesoporous films acting as effective electronic bridges are responsible for DET between enzyme molecules and metal electrode

Electrodeposited Fe-Co films prepared from a citric-acid-based plating bath

OpenAIRE

Yanai, Takeshi; Uto, H.; Shimokawa, Takaya; Nakano, Masaki; Fukunaga, Hirotoshi; Suzuki, K.

2013-01-01

Electrodeposited Fe-Co films are commonly prepared in a boric-acid-based bath. In this research, we applied citric acid instead of boric acid for the plating of Fe-Co films because boron in the waste bath is restricted by environmental-protection regulations in Japan. We evaluated the effect of citric acid on the magnetic and structural properties of the films. The saturation magnetization of the Fe-Co films slightly increased while the Fe content in the Fe-Co films decreased with increasing ...

Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

International Nuclear Information System (INIS)

Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

2007-01-01

The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

Investigation of the magnetic properties of electrodeposited NiFe thin films

International Nuclear Information System (INIS)

Bakkaloglu, O. F.; Bedir, M.; Oeztas, M.; Karahan, I. H.

2002-01-01

Most magnetic devices used today are based on the magnetic thin film. Rapid and extensive developments in magnetic sensor / actuator and magnetic recording technology place a growing demand on the use of different thin film fabrication techniques for magnetic materials. The electroplating technique is especially interesting due to its low cost, high throughput and high quality of the deposits which are extensively used in the magnetic recording industry to deposit relatively thick permalloy layers. Much recent attention has focused on the electrodeposited NiFe thin films, which exhibit giant magneto resistive behaviour as well as anisotropic magnetoresistance properties. n this study, NiFe thin films were developed by using electrodeposition technique and their crystallinity structures were investigated by using x-ray diffractometer measurements. The magneto resistive properties of the samples were investigated by Wan der Pauw method with a home made electromagnet under the different magnetic fields. The magnetoresistance measurements of the samples were carried out in two configurations; current parallel ( longitudinal ) and perpendicular ( transverse ) to the magnetic field. In the longitudinal configuration giant magnetoresistance was observed while anisotropic magnetoresistance was detected in the other configuration

Indium doped zinc oxide thin films obtained by electrodeposition

International Nuclear Information System (INIS)

Machado, G.; Guerra, D.N.; Leinen, D.; Ramos-Barrado, J.R.; Marotti, R.E.; Dalchiele, E.A.

2005-01-01

Indium doped ZnO thin films were obtained by co-electrodeposition (precursor and dopant) from aqueous solution. XRD analysis showed typical patterns of the hexagonal ZnO structure for both doped and undoped films. No diffraction peaks of any other structure such as In 2 O 3 or In(OH) 3 were found. The incorporation of In into the ZnO film was verified by both EDS and XPS measurements. The bandgap energy of the films varied from 3.27 eV to 3.42 eV, increasing with the In concentration in the solution. This dependence was stronger for the less cathodic potentials. The incorporation of In into the film occurs as both, an In donor state in the ZnO grains and as an amorphous In 2 O 3 at the grain boundaries

SURFACE MODIFICATION OF SEMICONDUCTOR THIN FILM OF TiO2 ON GRAPHITE SUBSTRATE BY Cu-ELECTRODEPOSITION

Directory of Open Access Journals (Sweden)

Fitria Rahmawati

2010-06-01

Full Text Available Surface modification of graphite/TiO2 has been done by mean of Cu electrodeposition. This research aims to study the effect of Cu electrodeposition on photocatalytic enhancing of TiO2. Electrodeposition has been done using CuSO4 0,4 M as the electrolyte at controlled current. The XRD pattern of modified TiO2 thin film on graphite substrate exhibited new peaks at 2θ= 43-44o and 2θ= 50-51o that have been identified as Cu with crystal cubic system, face-centered crystal lattice and crystallite size of 26-30 nm. CTABr still remains in the material as impurities. Meanwhile, based on morphological analysis, Cu particles are dissipated in the pore of thin film. Graphite/TiO2/Cu has higher photoconversion efficiency than graphite/TiO2.   Keywords: semiconductor, graphite/TiO2, Cu electrodeposition

Magnetic properties and microstructure investigation of electrodeposited FeNi/ITO films with different thickness

International Nuclear Information System (INIS)

Cao, Derang; Wang, Zhenkun; Feng, Erxi; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

2013-01-01

Highlights: •FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates by electrodeposition method. •A columnar crystalline microstructure and domain structure were obtained in FeNi thin films. •Particular FMR spectra of FeNi alloy with different thickness were studied. -- Abstract: FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates from the electrolytes by electrodeposition method have been studied by magnetic force microscopy (MFM), scanning electron microscopy (SEM) and ferromagnetic resonance (FMR) technique. For these films possessing an in-plane isotropy, the remanence decreases with the increasing of film thickness and the critical thickness that a stripe domain structure emerges is about 116 nm. Characteristic differences of the FMR spectra of different thickness are also observed. The results show that the resonance field at high measured angle increases firstly then decreases with increasing thickness, which may be related to the striped domain structure

Crystallization of Electrodeposited Germanium Thin Film on Silicon (100).

Science.gov (United States)

Abidin, Mastura Shafinaz Zainal; Matsumura, Ryo; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Muta, Shunpei; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

2013-11-06

We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD) images show that the as-deposited Ge thin film was amorphous. The crystallization of deposited Ge was achieved by rapid thermal annealing (RTA) at 980 °C for 1 s. The EBSD images confirm that the orientations of the annealed Ge are similar to that of the Si substrate. The highly intense peak of Raman spectra at 300 cm -1 corresponding to Ge-Ge vibration mode was observed, indicating good crystal quality of Ge. An additional sub peak near to 390 cm -1 corresponding to the Si-Ge vibration mode was also observed, indicating the Ge-Si mixing at Ge/Si interface. Auger electron spectroscopy (AES) reveals that the intermixing depth was around 60 nm. The calculated Si fraction from Raman spectra was found to be in good agreement with the value estimated from Ge-Si equilibrium phase diagram. The proposed technique is expected to be an effective way to crystallize Ge films for various device applications as well as to create strain at the Ge-Si interface for enhancement of mobility.

Preparation of p-type NiO films by reactive sputtering and their application to CdTe solar cells

Science.gov (United States)

Ishikawa, Ryousuke; Furuya, Yasuaki; Araki, Ryouichi; Nomoto, Takahiro; Ogawa, Yohei; Hosono, Aikyo; Okamoto, Tamotsu; Tsuboi, Nozomu

2016-02-01

Transparent p-type NiO films were prepared by reactive sputtering using the facing-target system under Ar-diluted O2 gas at Tsub of 30 and 200 °C. The increasing intensity of dominant X-ray diffraction (XRD) peaks indicates improvements in the crystallinity of NiO films upon Cu doping. In spite of the crystallographic and optical changes after Cu-doping, the electrical properties of Cu-doped NiO films were slightly improved. Upon Ag-doping at 30 °C under low O2 concentration, on the other hand, the intensity of the dominant (111) XRD peaks was suppressed and p-type conductivity increased from ˜10-3 to ˜10-1 S cm-1. Finally, our Ag-doped NiO films were applied as the back contact of CdTe solar cells. CdTe solar cells with a glass/ITO/CdS/CdTe/NiO structure exhibited an efficiency of 6.4%, suggesting the high potential of using p-type NiO for the back-contact film in thin-film solar cells.

Self-Catalyzed CdTe Wires

Directory of Open Access Journals (Sweden)

Tom Baines

2018-04-01

Full Text Available CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111 oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

Controllable Growth of Ga Film Electrodeposited from Aqueous Solution and Cu(In,Ga)Se2 Solar Cells.

Science.gov (United States)

Bi, Jinlian; Ao, Jianping; Gao, Qing; Zhang, Zhaojing; Sun, Guozhong; He, Qing; Zhou, Zhiqiang; Sun, Yun; Zhang, Yi

2017-06-07

Electrodepositon of Ga film is very challenging due to the high standard reduction potential (-0.53 V vs SHE for Ga 3+ ). In this study, Ga film with compact structure was successfully deposited on the Mo/Cu/In substrate by the pulse current electrodeposition (PCE) method using GaCl 3 aqueous solution. A high deposition rate of Ga 3+ and H + can be achieved by applying a large overpotential induced by high pulse current. In the meanwhile, the concentration polarization induced by cation depletion can be minimized by changing the pulse frequency and duty cycle. Uniform and smooth Ga film was fabricated at high deposition rate with pulse current density 125 mA/cm 2 , pulse frequency 5 Hz, and duty cycle 0.25. Ga film was then selenized together with electrodeposited Cu and In films to make a CIGSe absorber film for solar cells. The solar cell based on the Ga film presents conversion efficiency of 11.04%, fill factor of 63.40%, and V oc of 505 mV, which is much better than those based on the inhomogeneous and rough Ga film prepared by the DCE method, indicating the pulse current electrodeposition process is promising for the fabrication of CIGSe solar cell.

Studies on electrodeposited Cd1-xFe xS thin films

International Nuclear Information System (INIS)

Deshmukh, S.K.; Kokate, A.V.; Sathe, D.J.

2005-01-01

Thin films of Cd 1-x Fe x S have been prepared on stainless steel and fluorine doped tin oxide (FTO) coated glass substrates using electrodeposition technique. Double distilled water containing precursors of Cd, Fe and S are used with ethylene diamine tetra-acetic acid (EDTA) disodium salt as a complexing agent to obtain good quality deposits by controlling the rate of reactions. The different preparative parameters like concentration of bath, deposition time, pH of the bath and Fe content in the bath have been optimized by photoelectrochemical (PEC) technique in order to get good quality thin films. Different techniques have been used to characterize electrodeposited Cd 1-x Fe x S thin films. The X-ray diffraction (XRD) analysis reveals that the films Cd 1-x Fe x S are polycrystalline in nature with crystallite size 282 A for the films deposited with optimized preparative parameters. Scanning electron microscopy (SEM) study for the sample deposited at optimized preparative parameters reveals that all grains uniformly distributed over the surface of stainless steel substrate indicates well defined growth of polycrystalline Cd-Fe-S material. Optical absorption shows the presence of direct transition and band gap energy decreases from 2.43 to 0.81 eV with the increase of Fe content from 0 to 1. PEC study shows the films of Cd 1-x Fe x S with x = 0.2 are more photosensitive than other compositions

Synthesis of tin oxide nanoparticle film by cathodic electrodeposition.

Science.gov (United States)

Kim, Seok; Lee, Hochun; Park, Chang Min; Jung, Yongju

2012-02-01

Three-dimensional SnO2 nanoparticle films were deposited onto a copper substrate by cathodic electrodeposition in a nitric acid solution. A new formation mechanism for SnO2 films is proposed based on the oxidation of Sn2+ ion to Sn4+ ion by NO+ ion and the hydrolysis of Sn4+. The particle size of SnO2 was controlled by deposition potential. The SnO2 showed excellent charge capacity (729 mAh/g) at a 0.2 C rate and high rate capability (460 mAh/g) at a 5 C rate.

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

Science.gov (United States)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Influence of the supporting salt concentration on the electrodeposition of ZnO/eosin Y hybrid films

Energy Technology Data Exchange (ETDEWEB)

Boeckler, C.; Oekermann, T. [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover (Germany); Saruban, M.; Ichinose, K.; Yoshida, T. [Center of Innovative Photovoltaic Systems (CIPS), Environmental and Renewable Energy Systems (ERES) Division, Graduate School of Engineering, Gifu University (Japan)

2008-10-15

ZnO/eosin Y hybrid films were electrodeposited from O{sub 2}-saturated ZnCl{sub 2}-solution under variation of the concentration of the supporting salt KCl. The supporting salt concentration was found to have a significant influence on the amount of dye loading and the morphology of the ZnO/eosin Y films. By decreasing the supporting salt concentration to 0.01 M KCl, porous films with a high dye loading can be obtained at potentials of -0.8 V vs. SCE at low eosin Y concentrations in the electrodeposition bath, which usually only lead to porous films at potentials where eosin Y is reduced (<-0.9 V vs. SCE). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

ZnTe Amorphous Semiconductor Nanowires Array Electrodeposited into Polycarbonate Membrane Thin Films

International Nuclear Information System (INIS)

Ohgai, T; Ikeda, T; Ohta, J

2013-01-01

ZnTe amorphous semiconductor nanowires array was electrodeposited into the nanochannels of ion-track etched polycarbonate membrane thin films from acidic aqueous solution at 313 K. ZnTe electrodeposits with Zn-rich composition was obtained over the wide range of cathode potential from −0.8 V to −1.1 V and the growth rate of ZnTe amorphous nanowires was around 3 nm.sec −1 at the cathode potential of −0.8 V. Cylindrical shape of the nanowires was precisely transferred from the nanochannels and the aspect ratio reached up to ca. 40. ZnTe amorphous phase electrodeposited at 313 K was crystallized by annealing at 683 K and the band gap energy of ZnTe crystalline phase reached up to ca. 2.13 eV.

Influences of the CdS nanoparticles grown strategies on CdTe nanorods array films: A comparison between successive ionic layer absorption and reaction and chemical bath deposition

International Nuclear Information System (INIS)

Wang, Jun; Zhou, Xiaoming; Lv, Pin; Yang, Lihua; Ding, Dong; Niu, Jiasheng; Liu, Li; Li, Xue; Fu, Wuyou; Yang, Haibin

2016-01-01

The cadmium sulfide (CdS) film is deposited on the surface of cadmium telluride (CdTe) nanorods (NRs) by two different methods, successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) techniques. The influence of the deposition parameters on the properties of the films is investigated. Compared to SILAR, CBD is a simple and time saving technique, which can ensure full coverage and better growth of CdS on the surface of CdTe NRs. The photovoltaic characteristics of CdS sensitized CdTe films are also investigated. It is found that the CdTe/CBD-CdS thin film demonstrates excellent photoelectrical properties, which is ascribed to the large absorption coefficient of the material, indicating the potential applications in solar cells.

Electrodeposition of hybrid ZnO/organic dye films

Energy Technology Data Exchange (ETDEWEB)

Moya, Monica; Mari, Bernabe; Mollar, Miquel [Department de Fisica Aplicada-IDF, Universitat Politecnica de Valencia, Cami de Vera s/n, 46022 Valencia (Spain)

2011-06-15

The viability of the electrodeposition as a suitable technique for preparing new porous hybrid materials has been tested in this paper. Hybrid ZnO films with two different organic dyes: Eosin-Y and Tetrasulphonated-Cu-phtalocyanine were prepared. Their physical and chemical properties as well as their dependence on the growth conditions were investigated. It is found that the type of dye has a big influence on the morphology and porosity of hybrid films. Open and connected pores are created in hybrid ZnO/Eosin-Y films while both open and closed pores coexist in hybrid ZnO/Tetrasulfonated-Cu-phthalocyanine. As one of the promising applications of hybrid materials is photovoltaic conversion of sunlight, photoelectrochemical characterization of hybrid films is also reported. Photocurrent generation owing to both contributions ZnO and Eosin-Y is observed in ZnO/Eosin-Y films but no photocurrent has been observed in ZnO/Tetrasulfonated-Cu-phthalocyanine films. SEM micrographs of hybrid ZnO films grown in aqueous bath; (Left) ZnO/Eosin-Y films grown at 70 C, -0.9 V (Right) ZnO/Ts-CuPc films grown at 70 C, -0.9 V. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Synthesis of CuInSe2 thin films from electrodeposited Cu11In9 precursors by two-step annealing

Directory of Open Access Journals (Sweden)

TSUNG-WEI CHANG

2014-02-01

Full Text Available In this study, copper indium selenide (CIS films were synthesized from electrodeposited Cu-In-Se precursors by two-step annealing. The agglomeration phenomenon of the electrodeposited In layer usually occurred on the Cu surface. A thermal process was adopted to turn Cu-In precursors into uniform Cu11In9 binary compounds. After deposition of the Se layer, annealing was employed to form chalcopyrite CIS. However, synthesis of CIS from Cu11In9 requires sufficient thermal energy. Annealing temperature and time were investigated to grow high quality CIS film. Various electrodeposition conditions were investigated to achieve the proper atomic ratio of CIS. The properties of the CIS films were characterized by scanning electron microscopy (SEM, X-ray Diffraction (XRD, and Raman spectra.

Crystallization of Electrodeposited Germanium Thin Film on Silicon (100

Directory of Open Access Journals (Sweden)

Abdul Manaf Hashim

2013-11-01

Full Text Available We report the crystallization of electrodeposited germanium (Ge thin films on n-silicon (Si (100 by rapid melting process. The electrodeposition was carried out in germanium (IV chloride: propylene glycol (GeCl4:C3H8O2 electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD images show that the as-deposited Ge thin film was amorphous. The crystallization of deposited Ge was achieved by rapid thermal annealing (RTA at 980 °C for 1 s. The EBSD images confirm that the orientations of the annealed Ge are similar to that of the Si substrate. The highly intense peak of Raman spectra at 300 cm−1 corresponding to Ge-Ge vibration mode was observed, indicating good crystal quality of Ge. An additional sub peak near to 390 cm−1 corresponding to the Si-Ge vibration mode was also observed, indicating the Ge-Si mixing at Ge/Si interface. Auger electron spectroscopy (AES reveals that the intermixing depth was around 60 nm. The calculated Si fraction from Raman spectra was found to be in good agreement with the value estimated from Ge-Si equilibrium phase diagram. The proposed technique is expected to be an effective way to crystallize Ge films for various device applications as well as to create strain at the Ge-Si interface for enhancement of mobility.

Composition and performance of thin film CdSe electrodeposited from selenosulfite solution

International Nuclear Information System (INIS)

Szabo, J.P.; Simms, D.; Cocivera, M.

1985-01-01

Cathodic electrodeposition of thin film CdSe from aqueous selenosulfite solution has been studied as function of solution composition and electrode potential. The Cd/Se ratio has been analyzed using polarography and Rutherford backscattering spectroscopy. Polarography gives a compostion averaged over the whole film (2cm 2 ) while RBS gives local surface composition (1 mm 2 ). The average Cd/Se ratio is 1.1, but some variation was found to occur across the surface of film (0.82 to 1.2)

Impedance measurements of nanoporosity in electrodeposited ZnO films for DSSC

Energy Technology Data Exchange (ETDEWEB)

Dupuy, L.; Haller, S.; Rousset, J.; Donsanti, F.; Guillemoles, J.-F.; Lincot, D. [Institute of R and D on Photovoltaic Energy (IRDEP), UMR 7174 EDF-CNRS-Chimie Paristech, 6 quai Watier, 78400 Chatou (France); Decker, F. [Chemistry Department, ' ' Sapienza' ' Universita di Roma, 00185 Roma (Italy)

2010-05-15

Porous ZnO/dye hybrid films have been deposited by cathodic electrodeposition, and their active surface area after dye desorption was evaluated by impedance measurements with the semiconducting electrode polarized in accumulation. Surface area ratios have been deduced for a large number of films from imaginary part Z' vs. frequency measurements, having a constant rate over the frequency range from 0.5 Hz to > 50 Hz. The active surface increased by a factor of roughly 150 per every micron of film with respect to the area of a flat ZnO electrode: this linear relationship held from less than 1 {mu}m up to 9 {mu}m thick films. (author)

Thermoelectric properties of electrodeposited tellurium films and the sodium lignosulfonate effect

International Nuclear Information System (INIS)

Abad, Begoña; Rull-Bravo, Marta; Hodson, Stephen L.; Xu, Xianfan; Martin-Gonzalez, Marisol

2015-01-01

The effect of the addition of a surfactant, sodium lignosulfonate (SLS), on the thermoelectric properties of tellurium films prepared by electrochemical deposition is studied. The growth mechanism is found to have an important role in the thermoelectric properties since the grain size of the films is sharply reduced when the surfactant is added to the solution. For this reason, the electrical resistivity of the tellurium films when the surfactant is not added is 229 μΩ·m, which is lower than 798 μΩ·m with SLS. The Seebeck coefficient values are not influenced, with values in the vicinity of 285 μV/K for both solutions. The power factor resulted higher values than previous works, reaching values of 280 μW/m·K 2 (without SLS) and 82 μW/m·K 2 (with SLS) at room temperature. Finally, the thermal conductivity was measured by means of the Photoacoustic technique, which showed values of the order of 1 W/m·K for both solutions, which is a factor of 3 less than the bulk value of tellurium. A notable observation is that the power factor and the thermal conductivity of electrodeposited tellurium films have the same order of magnitude of bismuth telluride films grown by electrodeposition. The figure of merit is estimated to be approximately one order of magnitude higher than the bulk value, 0.09 without SLS and 0.03 with SLS, both at room temperature

Low-temperature preparation of crystalline nanoporous TiO2 films by surfactant-assisted anodic electrodeposition

Czech Academy of Sciences Publication Activity Database

Wessels, K.; Feldhoff, A.; Wark, M.; Rathouský, Jiří; Oekermann, T.

2006-01-01

Roč. 9, č. 6 (2006), C93-C96 ISSN 1099-0062 Institutional research plan: CEZ:AV0Z40400503 Keywords : thin films * cathodic electrodeposition * phase-stability * ZnO films Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.009, year: 2006

Electrodeposition of nanocrystalline CdSe thin films from dimethyl sulfoxide solution: Nucleation and growth mechanism, structural and optical studies

International Nuclear Information System (INIS)

Henriquez, R.; Badan, A.; Grez, P.; Munoz, E.; Vera, J.; Dalchiele, E.A.; Marotti, R.E.; Gomez, H.

2011-01-01

Highlights: → Electrodeposition of CdSe nanocrystalline semiconductor thin films. → Polycrystalline wurtzite structure with a slight (1010) preferred orientation. → Absorption edge shifts in the optical properties due to quantum confinement effects. - Abstract: Cadmium selenide (CdSe) nanocrystalline semiconductor thin films have been synthesized by electrodeposition at controlled potential based in the electrochemical reduction process of molecular selenium in dimethyl sulfoxide (DMSO) solution. The nucleation and growth mechanism of this process has been studied. The XRD pattern shows a characteristic polycrystalline hexagonal wurtzite structure with a slight (1 0 1 0) crystallographic preferred orientation. The crystallite size of nanocrystalline CdSe thin films can be simply controlled by the electrodeposition potential. A quantum size effect is deduced from the correlation between the band gap energy and the crystallite size.

Application of original assemblies of polyelectrolytes, urease and electrodeposited polyaniline as sensitive films of potentiometric urea biosensors

International Nuclear Information System (INIS)

Buron, Cédric C.; Quinart, Mélanie; Vrlinic, Tjasa; Yunus, Sami; Glinel, Karine; Jonas, Alain M.; Lakard, Boris

2014-01-01

Highlights: • Elaboration of original polymer materials using self-assembly and electrochemistry. • In situ monitoring of the growth of the polymer materials. • Development of urea electrochemical sensors using a home-made mini-potentiostat. - Abstract: Original assemblies were prepared for use as sensitive films of potentiometric enzyme urea sensors, and compared to identify the more efficient structure with respect to stability. These films included electrodeposited polyaniline, used as transducer, urease, used as catalyst, and biocompatible polyelectrolytes, used as a matrix to preserve the integrity of the enzyme in the sensitive film. Two kinds of assemblies were done: the first one consisted in the adsorption of urease onto a polyaniline film followed by the adsorption of a chitosan-carboxymethylpullulan multilayer film, while the second one consisted in the adsorption of a urease-chitosan multilayer film onto an electrodeposited polyaniline film. The morphological features and growth of these assemblies were characterized by scanning electron microscopy and quartz crystal microbalance, respectively. This allowed us to demonstrate that the assemblies are successfully formed onto the electrodes of the sensors. The potentiometric responses of both assemblies were then measured as a function of urea concentration using a home-made portable potentiostat. The electrochemical response of resulting sensors was fast and sensitive for both types of assemblies, but the stability in time was much better for the films obtained from alternative adsorption of urease and chitosan onto a layer of urease adsorbed over electrodeposited polyaniline

Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

Science.gov (United States)

Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L.; Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

1998-03-24

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Corrosion resistance and long-term durability of super-hydrophobic nickel film prepared by electrodeposition process

International Nuclear Information System (INIS)

Khorsand, S.; Raeissi, K.; Ashrafizadeh, F.

2014-01-01

A super-hydrophobic nickel film with micro-nano structure was successfully fabricated by electrodeposition process. By controlling electrodeposition parameters and considering different storage times for the coatings in air, various nickel films with different wettability were fabricated. Surface morphology of nickel films was examined by means of scanning electron microscopy (SEM). The results showed that the micro-nano nickel film was well-crystallized and exhibited pine cone-like microstructure with nano-cone arrays randomly dispersed on each micro-protrusion. The wettability of the micro-nano nickel film varied from super-hydrophilicity (water contact angle 5.3°) to super-hydrophobicity (water contact angle 155.7°) by exposing the surface in air at room temperature. The corrosion resistance of the super-hydrophobic film was estimated by electrochemical impedance spectroscopy (EIS) and Tafel polarization measurements. The potentiodynamic curves revealed that the corrosion rate of superhydrophobic surface was only 0.16% of the bare copper substrate. Moreover, EIS measurements and appropriate equivalent circuit models revealed that the corrosion resistance of nickel films considerably improved with an increase in the hydrophobicity. The superhydrophobic surface also exhibited an excellent long-term durability in neutral 3.5 wt.% NaCl solution.

Selective formation of biphasic thin films of metal–organic frameworks by potential-controlled cathodic electrodeposition

OpenAIRE

Li, Minyuan Miller; Dinca, Mircea

2013-01-01

Cathodic electrodeposition lends itself to the formation of biphasic metal–organic framework thin films at room temperature from single deposition baths using potential bias as the main user input. Depending on the applied potential, we selectively deposit two different phases as either bulk mixtures or bilayer films.

Semiconductor interfaces of polycrystalline CdTe thin-film solar cells. Characterization and modification of electronic properties

International Nuclear Information System (INIS)

Fritsche, J.

2003-01-01

In this thesis for the first time the electronic properties of the semiconductor interfaces in polycrystalline CdTe thin-film solar cells, as well as the morphological and electronic properties of the single semiconductor surfaces were systematically characterized by surface-sensitive measuring methods. The morphological surface properties were analyzed by scanning force microscopy. As substrate materials with SnO 2 /ITO covered glass was applied, where the CdS and CdTe layers were deposited. Furthermore the electronic and morphological material properties of differently treated SnO 2 surfaces were characterized. Beside the studies with scanning force microscopy sputtering depth profiles and X-ray photoelectron spectroscopy were measured

Study of the Mg incorporation in CdTe for developing wide band gap Cd1−xMgxTe thin films for possible use as top-cell absorber in a tandem solar cell

International Nuclear Information System (INIS)

Martínez, Omar S.; Millán, Aduljay Remolina; Huerta, L.; Santana, G.; Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R.; Mathew, X.

2012-01-01

Highlights: ► Thin films of Cd 1−x Mg x Te with high spatial uniformity and band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. ► Obtained Cd 1−x Mg x Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. ► XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. ► SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd 1−x Mg x Te with band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 °C. Different experimental techniques such as XRD, UV–vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd 1−x Mg x Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV–vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd 1−x Mg x Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

Structural and optical properties of electrodeposited culnSe2 thin films for photovoltaic solar cells

International Nuclear Information System (INIS)

Guillen, C.; Herrero, J.; Galiano, F.

1990-01-01

Optical an structural properties of electrodeposited copper indium diselenide, CulnSe2, thin films were studied for its application in photovoltaic devices. X-ray diffraction patterns showed that thin films were grown in chalcopyrite phase after suitable treatments. Values of Eg for the CulnSe2 thin films showed a dependence on the deposition potential as determined by optical measurements. (Author) 47 refs

Radiative and interfacial recombination in CdTe heterostructures

Energy Technology Data Exchange (ETDEWEB)

Swartz, C. H., E-mail: craig.swartz@txstate.edu; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H. [Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666 (United States); Zaunbrecher, K. N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Mississippi RSF200, Golden, Colorado 80401 (United States)

2014-12-01

Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

Nanoindentation and micro-mechanical fracture toughness of electrodeposited nanocrystalline Ni–W alloy films

International Nuclear Information System (INIS)

Armstrong, D.E.J.; Haseeb, A.S.M.A.; Roberts, S.G.; Wilkinson, A.J.; Bade, K.

2012-01-01

Nanocrystalline nickel–tungsten alloys have great potential in the fabrication of components for microelectromechanical systems. Here the fracture toughness of Ni–12.7 at.%W alloy micro-cantilever beams was investigated. Micro-cantilevers were fabricated by UV lithography and electrodeposition and notched by focused ion beam machining. Load was applied using a nanoindenter and fracture toughness was calculated from the fracture load. Fracture toughness of the Ni–12.7 at.%W was in the range of 1.49–5.14 MPa √m. This is higher than the fracture toughness of Si (another important microelectromechanical systems material), but considerably lower than that of electrodeposited nickel and other nickel based alloys. - Highlights: ► Micro-scale cantilevers manufactured by electro-deposition and focused ion beam machining. ► Nanoindenter used to perform micro-scale fracture test on Ni-13at%W micro-cantilevers. ► Calculation of fracture toughness of electrodeposited Ni-13at%W thin films. ► Fracture toughness values lower than that of nanocrystalline nickel.

Nanoindentation and micro-mechanical fracture toughness of electrodeposited nanocrystalline Ni-W alloy films

Energy Technology Data Exchange (ETDEWEB)

Armstrong, D.E.J., E-mail: david.armstrong@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH (United Kingdom); Haseeb, A.S.M.A. [Department of Mechanical Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Roberts, S.G.; Wilkinson, A.J. [Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH (United Kingdom); Bade, K. [Institut fuer Mikrostrukturtechnik (IMT), Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

2012-04-30

Nanocrystalline nickel-tungsten alloys have great potential in the fabrication of components for microelectromechanical systems. Here the fracture toughness of Ni-12.7 at.%W alloy micro-cantilever beams was investigated. Micro-cantilevers were fabricated by UV lithography and electrodeposition and notched by focused ion beam machining. Load was applied using a nanoindenter and fracture toughness was calculated from the fracture load. Fracture toughness of the Ni-12.7 at.%W was in the range of 1.49-5.14 MPa {radical}m. This is higher than the fracture toughness of Si (another important microelectromechanical systems material), but considerably lower than that of electrodeposited nickel and other nickel based alloys. - Highlights: Black-Right-Pointing-Pointer Micro-scale cantilevers manufactured by electro-deposition and focused ion beam machining. Black-Right-Pointing-Pointer Nanoindenter used to perform micro-scale fracture test on Ni-13at%W micro-cantilevers. Black-Right-Pointing-Pointer Calculation of fracture toughness of electrodeposited Ni-13at%W thin films. Black-Right-Pointing-Pointer Fracture toughness values lower than that of nanocrystalline nickel.

Study of the electrodeposition of rhenium thin films by electrochemical quartz microbalance and X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Schrebler, R.; Cury, P.; Suarez, C.; Munoz, E.; Vera, F.; Cordova, R.; Gomez, H.; Ramos-Barrado, J.R.; Leinen, D.; Dalchiele, E.A.

2005-01-01

Rhenium thin films were prepared by electrodeposition from an aqueous solution containing 0.1 M Na 2 SO 4 +H 2 SO 4 , pH 2 in presence of y mM HReO 4 . As substrates polycrystalline gold (y=0.75 mM HReO 4 ) and monocrystalline n-Si(100) (y=40 mM HReO 4 ) were used. The electrochemical growth of rhenium was studied by cyclic voltammetry and electrochemical quartz microbalance on gold electrodes. The results found in the potential region before the hydrogen evolution reaction (her) showed that ReO 3 , ReO 2 and Re 2 O 3 with different hydration grades can be formed. In the potential region where the her is occurring, either on gold or n-Si(100) the electrodeposition of metallic rhenium takes place. On both substrates, rhenium films were formed by electrolysis at constant potential and X-ray photoelectron spectroscopy technique was used to characterise these deposits. It was concluded that the electrodeposited films were of metallic rhenium and only the uppermost atomic layer contained rhenium oxide species

The mechanism of cathodic electrodeposition of epoxy coatings and the corrosion behaviour of the electrodeposited

Directory of Open Access Journals (Sweden)

VESNA B. MISKOVIC-STANKOVIC

2002-05-01

Full Text Available The model of organic film growth on a cathode during electrodeposition process proposes the current density-time and film thickness-time relationships and enables the evaluation of the rate contants for the electrochemical reaction of OH– ion evolution and for the chemical reaction of organic film deposition. The dependences of film thickness and rate constants on the applied voltage, bath temperature and resin concentration in the electrodeposition bath have also been obtained. The deposition parameters have a great effect on the cathodic electrodeposition process and on the protective properties of the obtained electrodeposited coatings. From the time dependences of the pore resistance, coating capacitance and relative permittivity, obtained from impedance measurements, the effect of applied voltage, bath temperature and resin concentration on the protective properties of electrodeposited coatings has been shown. Using electrochemical impedance spectroscopy, thermogravimetric analysis, gravimetric liquid sorption experiments, differential scanning calorimetry and optical miscroscopy, the corrosion stability of epoxy coatings was investigated. A mechanism for the penetration of electrolyte through an organic coating has been suggested and the shape and dimensions of the conducting macropores have been determined. It was shown that conduction through a coating depends only on the conduction through the macropores, although the quantity of electrolyte in the micropores of the polymer net is about one order of magnitude greater than that inside the conducting macropores.

Thick epitaxial CdTe films grown by close space sublimation on Ge substrates

Energy Technology Data Exchange (ETDEWEB)

Jiang, Q; Haliday, D P; Tanner, B K; Brinkman, A W [Department of Physics, University of Durham. Science Site, Durham, DH1 3LE (United Kingdom); Cantwell, B J; Mullins, J T; Basu, A [Durham Scientific Crystals Ltd., NetPark, Thomas Wright Way, Sedgefield, County Durham, TS21 3FD (United Kingdom)], E-mail: Q.Z.Jiang@durham.ac.uk

2009-01-07

This paper reports, for the first time, the successful growth of 200 {mu}m thick CdTe films on mis-oriented Ge(1 0 0) substrates by a cost-effective optimized close space sublimation method. It is found that, as the thickness increases to a few hundred micrometres, subgrains are formed probably as a result of the large density of dislocations and strain within the initial interfacial layers. The films are of high quality (x-ray rocking curve width {approx}100 arcsec) and high resistance ({approx}10{sup 9} {omega} cm), and are thus candidates for x-ray and {gamma}-ray detectors. (fast track communication)

One step electrodeposition of Cu2ZnSnS4 thin films in a novel bath with sulfurization free annealing

Science.gov (United States)

Tang, Aiyue; Li, Zhilin; Wang, Feng; Dou, Meiling; Pan, Youya; Guan, Jingyu

2017-04-01

Cu2ZnSnS4 (CZTS) is a quaternary kesterite compound with suitable band gap for thin film solar cells. In most electrodeposition-anneal routes, sulfurization is inevitable because the as-deposited film is lack of S. In this work, a novel green electrolyte was designed for synthesizing CZTS thin films with high S content. In the one-step electrodeposition, K4P2O7 and C7H6O6S were added to form complex with metallic ions in the electrolyte, which could attribute to co-deposition. The as-deposited film obtained high S content satisfying stoichiometry. After a sulfurization free annealing, the continuous and uniform CZTS thin film was obtained, which had pure kesterite structure and a suitable band gap of 1.53 eV. Electrodeposition mechanism investigation revealed that the K4P2O7 prevented the excessive deposition of Cu2+ and Sn2+. The C7H6O6S promoted the reduction of Zn2+. So the additives narrowed the co-deposition potentials of the metallic elements through a synergetic effect. They also promoted the reduction of S2O32- to ensure the co-deposition of the four elements and the stoichiometry. The sulfurization free annealing process can promote the commercialization of CZTS films and the successful design principle of environmental friendly electrolytes could be applied in other electrodeposition systems.

Thin film CdTe solar cells by close spaced sublimation: Recent results from pilot line

International Nuclear Information System (INIS)

Siepchen, B.; Drost, C.; Späth, B.; Krishnakumar, V.; Richter, H.; Harr, M.; Bossert, S.; Grimm, M.; Häfner, K.; Modes, T.; Zywitzki, O.; Morgner, H.

2013-01-01

CdTe is an attractive material to produce high efficient and low cost thin film solar cells. The semiconducting layers of this kind of solar cell can be deposited by the Close Spaced Sublimation (CSS) process. The advantages of this technique are high deposition rates and an excellent utilization of the raw material, leading to low production costs and competitive module prices. CTF Solar GmbH is offering equipment and process knowhow for the production of CdTe solar modules. For further improvement of the technology, research is done at a pilot line, which covers all relevant process steps for manufacture of CdTe solar cells. Herein, we present the latest results from the process development and our research activities on single functional layers as well as for complete solar cell devices. Efficiencies above 13% have already been obtained with Cu-free back contacts. An additional focus is set on different transparent conducting oxide materials for the front contact and a Sb 2 Te 3 based back contact. - Highlights: ► Laboratory established on industrial level for CdTe solar cell research ► 13.0% cell efficiency with our standard front contact and Cu-free back contact ► Research on ZnO-based transparent conducting oxide and Sb 2 Te 3 back contacts ► High resolution scanning electron microscopy analysis of ion polished cross section

Effect of Gallium Doping on the Characteristic Properties of Polycrystalline Cadmium Telluride Thin Film

Science.gov (United States)

Ojo, A. A.; Dharmadasa, I. M.

2017-08-01

Ga-doped CdTe polycrystalline thin films were successfully electrodeposited on glass/fluorine doped tin oxide substrates from aqueous electrolytes containing cadmium nitrate (Cd(NO3)2·4H2O) and tellurium oxide (TeO2). The effects of different Ga-doping concentrations on the CdTe:Ga coupled with different post-growth treatments were studied by analysing the structural, optical, morphological and electronic properties of the deposited layers using x-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current conductivity test respectively. XRD results show diminishing (111)C CdTe peak above 20 ppm Ga-doping and the appearance of (301)M GaTe diffraction above 50 ppm Ga-doping indicating the formation of two phases; CdTe and GaTe. Although, reductions in the absorption edge slopes were observed above 20 ppm Ga-doping for the as-deposited CdTe:Ga layer, no obvious influence on the energy gap of CdTe films with Ga-doping were detected. Morphologically, reductions in grain size were observed at 50 ppm Ga-doping and above with high pinhole density within the layer. For the as-deposited CdTe:Ga layers, conduction type change from n- to p- were observed at 50 ppm, while the n-type conductivity were retained after post-growth treatment. Highest conductivity was observed at 20 ppm Ga-doping of CdTe. These results are systematically reported in this paper.

Challenges of sample preparation for cross sectional EBSD analysis of electrodeposited nickel films

DEFF Research Database (Denmark)

Alimadadi, Hossein; Pantleon, Karen

2009-01-01

Thorough microstructure and crystallographic orientation analysis of thin films by means of electron backscatter diffraction requires cross section preparation of the film-substrate compound. During careful preparation, changes of the rather non-stable as-deposited microstructure must be avoided....... Different procedures for sample preparation including mechanical grinding and polishing, electropolishing and focused ion beam milling have been applied to a nickel film electrodeposited on top of an amorphous Ni-P layer on a Cu-substrate. Reliable EBSD analysis of the whole cross section can be obtained...

Physical and electrochemical properties of ZnO films fabricated from highly cathodic electrodeposition potentials

Science.gov (United States)

Ismail, Abdul Hadi; Abdullah, Abdul Halim; Sulaiman, Yusran

2017-03-01

The physical and electrochemical properties of zinc oxide (ZnO) film electrode that were prepared electrochemically were studied. ZnO was electrodeposited on ITO glass substrate by applying three different highly cathodic potentials (-1.3 V, -1.5 V, -1.7 V) in a solution containing 70 mM of Zn(NO3)2.xH2O and 0.1 M KCl with bath temperatures of 70 °C and 80 °C. The presence of ZnO was asserted from XRD analysis where the corresponding peaks in the spectra were assigned. SEM images revealed the plate-like hexagonal morphology of ZnO which is in agreement with the XRD analysis. The areal capacitance of the ZnO was observed to increase when the applied electrodeposition potential is increased from -1.3 V to -1.5 V. However, the areal capacitance is found to decrease when the applied electrodeposition potential is further increased to -1.7 V. The resistance of charge transfer (Rct) of the ZnO decreased when the applied electrodeposition potential varies from -1.3 V to -1.7 V due to the decreased particle size of ZnO when more cathodic electrodeposition potential is applied.

Synthesis, nanostructure and magnetic properties of FeCo-reduced graphene oxide composite films by one-step electrodeposition

International Nuclear Information System (INIS)

Cao, Derang; Li, Hao; Wang, Zhenkun; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

2015-01-01

FeCo-reduced graphene oxide (FeCo-RGO) composite film was fabricated on indium tin oxide substrate using one-step electrodeposition method. Raman spectroscopy and field emission scanning electron microscope results show that the reduced graphene oxide is coprecipitated with the FeCo film. The energy-dispersive spectrometer results demonstrate that the atomic ratio of Fe/Co in FeCo-RGO composite film is larger than that of the FeCo film under the same fabrication condition. As a result, the FeCo-RGO composite film exhibits good soft magnetic properties and high-frequency properties as well as the FeCo film. The magnetic anisotropy field and saturation magnetization of FeCo-RGO composite film are increased when compared with FeCo film. Furthermore, the ferromagnetic resonance frequency is improved from 2.15 GHz for the FeCo film to 3.9 GHz for the FeCo-RGO composite film. - Highlights: • FeCo-reduced graphene oxide composite film was fabricated on indium tin oxide substrate. • One step electrodeposition method was used. • Good soft magnetic properties were exhibited by the composite films. • Increase of resonance frequency from 2.15 GHz for FeCo film to 3.9 GHz for composite film

Optimization of the Electrodeposition Parameters to Improve the Stoichiometry of In2S3 Films for Solar Applications Using the Taguchi Method

Directory of Open Access Journals (Sweden)

Maqsood Ali Mughal

2014-01-01

Full Text Available Properties of electrodeposited semiconductor thin films are dependent upon the electrolyte composition, plating time, and temperature as well as the current density and the nature of the substrate. In this study, the influence of the electrodeposition parameters such as deposition voltage, deposition time, composition of solution, and deposition temperature upon the properties of In2S3 films was analyzed by the Taguchi Method. According to Taguchi analysis, the interaction between deposition voltage and deposition time was significant. Deposition voltage had the largest impact upon the stoichiometry of In2S3 films and deposition temperature had the least impact. The stoichiometric ratios between sulfur and indium (S/In: 3/2 obtained from experiments performed with optimized electrodeposition parameters were in agreement with predicted values from the Taguchi Method. The experiments were carried out according to Taguchi orthogonal array L27 (3^4 design of experiments (DOE. Approximately 600 nm thick In2S3 films were electrodeposited from an organic bath (ethylene glycol-based containing indium chloride (InCl3, sodium chloride (NaCl, and sodium thiosulfate (Na2S2O3·5H2O, the latter used as an additional sulfur source along with elemental sulfur (S. An X-ray diffractometer (XRD, energy dispersive X-ray spectroscopy (EDS unit, and scanning electron microscope (SEM were, respectively, used to analyze the phases, elemental composition, and morphology of the electrodeposited In2S3 films.

Rapid Obtaining of Nano-Hydroxyapatite Bioactive Films on NiTi Shape Memory Alloy by Electrodeposition Process

Science.gov (United States)

Lobo, A. O.; Otubo, J.; Matsushima, J. T.; Corat, E. J.

2011-07-01

Nano-hydroxyapatite (n-HA) crystalline films have been developed in this study by electrodeposition method on NiTi shape memory alloy (SMA). The electrodeposition of the n-HA films was carried out using 0.042 mol/L Ca(NO3)2 · 4H2O + 0.025 mol/L (NH4) · 2HPO4 electrolytes by applying a constant potential of -2.0 V for 120 min and keeping the solution temperature at 70 °C. The characterization of n-HA films is of special importance since bioactive properties related to n-HA have been directly identified with its specific composition and crystalline structure. AFM, XRD, EDX, FEG-SEM and Raman spectroscopy shows a homogeneous film, with high crystallinity, special composition, and bioactivity properties (Ca/P = 1.93) of n-HA on NiTi SMA surfaces. The n-HA coating with special structure would benefit the use of NiTi alloy in orthopedic applications.

Super-hydrophobic nickel films with micro-nano hierarchical structure prepared by electrodeposition

International Nuclear Information System (INIS)

Hang Tao; Hu Anmin; Ling Huiqin; Li Ming; Mao Dali

2010-01-01

Super-hydrophobic nickel films were prepared by a simple and low cost electrodepositing method. The surface morphologies of the films characterized by scanning electronic microscope exhibit hierarchical structure with micro-nanocones array, which can be responsible for their super-hydrophobic characteristic (water contact angle over 150 o ) without chemical modification. The wettability of the film can be varied from super-hydrophobic (water contact angle 154 o ) to relatively hydrophilic (water contact angle 87 o ) by controlling the size of the micro-nanocones. The mechanism of the hydrophobic characteristic of nickel films with this unique structure was illustrated by several models. Such micro-nanostructure and its special wettability are expected to be applied in the practical industry.

Electrodeposition of thin Pd-Ag films

International Nuclear Information System (INIS)

Hasler, P.; Allmendinger, T.

1993-01-01

Thin Pd-Ag layers were electroplated preferably on brass and on nickel substrates using a two-compartment cell separated by an anion exchange membrane. The weakly alkaline electrolyte contained glycine-glycinate as the major complexing agents. The plating experiments were usually carried out without stirring, at different potentials and temperatures and in the absence or in the presence of sodium benzaldehyde-2,4-disulphonate (BDS). The samples were characterized by scanning electron microscopy and light microscopy. Their compositions were determined analytically by the inductively coupled plasma technique. In addition, the film porosity was tested. Electrodeposition in almost limiting current conditions for both components and without simultaneous hydrogen evolution led to deposits with compositions being in good agreement with the molar metal ratio in the electrolyte (77:23). The best results were achieved between 0 and -50 mV with respect to a reversible hydrogen electrode at 0 C in the presence of BDS. These deposits were bright, had good adherence and exhibited no pores at a film thickness of 1.2 μm. At too negative potentials, the deposits became black and powdery. (orig.)

Health, safety and environmental risks from the operation of CdTe and CIS thin-film modules

International Nuclear Information System (INIS)

Steinberger, Hartmut

1998-01-01

This paper identifies the materials embedded in on a type of CIS (Copper indium diselenide) and four different types of CdTe (cadmium telluride) thin-film modules. It refers to the results of our outdoor leaching experiments on photovoltaic (PV) samples broken into small fragments. Estimations for modules accidents on the roof or in the garden of a residential house, e.g. leaching of hazardous materials into water or soil, are given. The outcomes of our estimations show some module materials released into water or oil during leaching accidents. In a worst-case scenario for CdTe modules the leached cadmium concentration in the collected water is estimated to be no higher than the German drinking water limit concentration. For the CIS module scenario the estimated leached element concentrations are about one to two orders of magnitude below the German drinking water limit concentration. For broken CIS and CdTe modules on the ground no critical increase of the natural element concentration is observed after leaching into the soil for 1 year. (Author)

Influence of the layer parameters on the performance of the CdTe solar cells

Science.gov (United States)

Haddout, Assiya; Raidou, Abderrahim; Fahoume, Mounir

2018-03-01

Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1D. The ZnO: Al film shows a high efficiency than SnO2:F. Moreover, the thinner window layer and lower defect density of CdS films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer CdTe and high metal work function. For the low cost of cell production, ultrathin film CdTe cells are used with a back surface field (BSF) between CdTe and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick CdTe, 0.1-μm-thick PbTe and 30-nm-thick CdS.

A study on the electrodeposition of NiFe alloy thin films using chronocoulometry and electrochemical quartz crystal microgravimetry

CERN Document Server

Myung, N S

2001-01-01

Ni, Fe and NiFe alloy thin films were electrodeposited at a polycrystalline Au surface using a range of electrolytes and potentials. Coulometry and EQCM were used for real-time monitoring of electroplating efficiency of the Ni and Fe. The plating efficiency of NiFe alloy thin films was computed with the aid of ICP spectrometry. In general, plating efficiency increased to a steady value with deposition time. Plating efficiency of Fe was lower than that of Ni at -0.85 and -1.0 V but the efficiency approached to the similar plateau value to that of Ni at more negative potentials. The films with higher content of Fe showed different stripping behavior from the ones with higher content of Ni. Finally, compositional data and real-time plating efficiency are presented for films electrodeposited using a range of electrolytes and potentials.

New Sunshine Program for fiscal 2000. Development of photovoltaic system commercialization technology - Development of thin-film solar cell manufacturing technology - Development of low-cost/large area module manufacturing technology (Development of high-reliability CdTe solar cell module manufacturing technology); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Koshinraisei CdTe taiyo denchi mojuru no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

Research and development was conducted for reliable CdTe solar cell modules, large in area and high in efficiency. In the study of large-area CdS thin film fabrication, a conversion efficiency of 12.5-14.2% was achieved in a cell in a large-area substrate using a mist method-aided process of continuous CdS film fabrication. In the study of large-area CdTe thin film fabrication, the optimization was studied of the base-forming CdS film fabrication conditions and of the CdTe film fabrication conditions in a method using a CdTe powder processed by dry kneading, and a conversion efficiency peak was found to exist when the CdS film thickness was in the range of 700-900 angstrom. In the fabrication of large-area submodules, a large-area substrate was taken up, and TCO (transparent conducting oxide) film was fabricated by the mist method, CdTe film by the normal pressure CSS method, electrodes by the screen printing method, and CdTe film patterns by the blast method. As the result, a conversion efficiency of 11.0% was achieved. In a cost estimation for large-area CdTe solar cell modules, 140 yen/Wp (conversion efficiency: 11.0%, annual production: 100 MW) was obtained. (NEDO)

Roughness development in electrodeposited soft magnetic CoNiFe films in the presence of organic additives

Directory of Open Access Journals (Sweden)

STEVE RIEMER

2003-05-01

Full Text Available The effects of three additives, sodium lauryl sulfate (NaLS, saccharin (Sacc, and NaLS + Sacc, on roughness development during the electrodeposition of CoNiFe films were investigated. The characterization of these films by atomic force microscopy shows that the electrodeposits produced from NaLS containing solution result in a rough surface. The role of NaLS surfactant is to change the interfacial tension and clean non-polar species like hydrogen bubbles from the surface. In Sacc containing solution, the evolution of a smooth surface is controlled by adsorbed Sacc molecule at the interface. The kinetic roughening of these deposits was investigated by dynamic scaling analysis. It was demonstrated that the roughness of CoNiFe films, obtained in the presence of NaLS + Sacc additives, was also dependent on current density, roughness of substrate, and the temperature of plating bath.

Morphology-controlled electrodeposition of Cu2O microcrystalline particle films for application in photocatalysis under sunlight

International Nuclear Information System (INIS)

Wu, Guodong; Zhai, Wei; Sun, Fengqiang; Chen, Wei; Pan, Zizhao; Li, Weishan

2012-01-01

Graphical abstract: Display Omitted Highlights: ► PEG was used to electro-deposit Cu 2 O microcrystalline particle films. ► Morphologies of Cu 2 O microcrystals could be controlled by the amount of PEG. ► The films showed regularly varied photocatalytic activities under sunlight. ► The films could be recycled and showed stable activities. -- Abstract: Morphology-controlled Cu 2 O microcrystalline particle films had been successfully electrodeposited on tin-doped indium oxide glass substrates in CuSO 4 solutions containing different amounts of polyethylene glycol (PEG) additives. With an increase of PEG, microcrystals gradually changed from irregular shapes to cubes, octahedrons, and spherical shapes. Sizes increasingly became smaller with an increase of PEG under the same deposition time. These films had been first used as recyclable photocatalysts and showed excellent and photocatalytic activities in photodegradation of methylene blue (MB) under sunlight. Activities were regularly varied relative to the morphologies of films controlled by the amount of PEG and could be further enhanced by adding a little amount of hydrogen peroxide in the MB solution. The method for controllable preparation of Cu 2 O microcrystals with photocatalytic activities was simple and inexpensive. The as-prepared particle films could also be used in photodegradation of many other pollutants under sunlight.

Unified Numerical Solver for Device Metastabilities in CdTe Thin-Film PV

Energy Technology Data Exchange (ETDEWEB)

Vasileska, Dragica [Arizona State Univ., Tempe, AZ (United States)

2017-08-17

Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers de-vote significant empirical efforts to study these phenomena and to improve semiconduc-tor device stability. Still, understanding the underlying reasons of these instabilities re-mains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most com-monly alleged causes of metastability in CdTe device, such as “migration of Cu,” have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses sug-gesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe pro-vide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic de-fects; for example, changing the state of an impurity from an interstitial donor to a sub-stitutional acceptor often is accompanied by generation of a compensating intrinsic in-terstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the elec-trical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of

Electrodeposition of polypyrrole films on aluminum surfaces from a p-toluene sulfonic acid medium

Directory of Open Access Journals (Sweden)

Andréa Santos Liu

2009-01-01

Full Text Available Electrodeposition of polypyrrole films on aluminum from aqueous solutions containing p-toluene sulfonic acid and pyrrole was performed by cyclic voltammetry and galvanostatic technique. The influence of applied current density on the morphology of the films was studied by Scanning Electron Microscopy. The films displayed a cauliflower-like structure consisting of micro-spherical grains. This structure is related to dopand intercalation in the polymeric chain. Films deposited at higher current density were more susceptible to the formation of pores and defects along the polymeric chain than films deposited at lower current density. These pores allow the penetration of aggressive species, thereby favoring the corrosion process.

Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions

Science.gov (United States)

Ramos-Ruiz, Adriana; Wilkening, Jean V.; Field, James A.; Sierra-Alvarez, Reyes

2017-01-01

A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. PMID:28472709

Study of the Mg incorporation in CdTe for developing wide band gap Cd{sub 1-x}Mg{sub x}Te thin films for possible use as top-cell absorber in a tandem solar cell

Energy Technology Data Exchange (ETDEWEB)

Martinez, Omar S. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Universidad Politecnica del Estado de Guerrero, Comunidad de Puente Campuzano, C.P. 40325 Taxco de Alarcon, Guerrero (Mexico); Millan, Aduljay Remolina [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Huerta, L.; Santana, G. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico. C.P 04510 Mexico D.F. (Mexico); Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico); Mathew, X., E-mail: xm@cie.unam.mx [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, 62580 Temixco, Morelos (Mexico)

2012-02-15

Highlights: Black-Right-Pointing-Pointer Thin films of Cd{sub 1-x}Mg{sub x}Te with high spatial uniformity and band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. Black-Right-Pointing-Pointer Obtained Cd{sub 1-x}Mg{sub x}Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. Black-Right-Pointing-Pointer XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. Black-Right-Pointing-Pointer SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd{sub 1-x}Mg{sub x}Te with band gap in the range of 1.6-1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 Degree-Sign C. Different experimental techniques such as XRD, UV-vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd{sub 1-x}Mg{sub x}Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV-vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd{sub 1-x}Mg{sub x}Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

Composition and growth procedure-dependent properties of electrodeposited CuInSe 2 thin films

Science.gov (United States)

Babu, S. Moorthy; Ennaoui, A.; Lux-Steiner, M. Ch.

2005-02-01

CuInSe 2 thin films were deposited on molybdenum-coated glass substrates by electrodeposition. Deposition was carried out with a variety of electrochemical bath compositions. The quality of the deposits depends very much on the source materials as well as the concentration of the same in the electrolyte. The deposition potential was varied from -0.4 to -0.75 V vs. SCE. The pH of the solution was adjusted to 1.5-2 using diluted sulphuric acid. Chloride salts containing bath yield good surface morphology, but there is always excess of the metallic content in the deposited films. Different growth procedures, like initial metallic layers of copper or indium, layers of copper selenide or indium selenide before the actual deposition of ternary chalcopyrite layers were attempted. Fabrication pathway, morphological and compositional changes due to the different precursor route has been analysed. The quality of the deposits prepared by one-step electrodeposition is better than the deposits with a two-stage process. The deposited films were characterized with XRD, SEM-EDAX, UV-visible spectroscopy and I- V characteristics. The deposited films were annealed in air as well as in nitrogen atmosphere. The influence of annealing temperature, environment and annealing time on the properties of the films are evaluated. Attempts were made to fabricate solar cell structure from the deposited absorber films. The structure of Mo/CuInSe 2/CdS/ZnO/Ni was characterized with surface, optical and electrical studies.

Effects of Preparation Conditions on the CuInS2 Films Prepared by One-Step Electrodeposition Method

Directory of Open Access Journals (Sweden)

Rongfeng Guan

2015-01-01

Full Text Available CuInS2 thin films were prepared onto indium tin oxide (ITO substrates by sulfurization of electrodeposited CuxInySz precursor films under S atmosphere. The influences of deposition potential, Cu2+/In3+ ratio, sulfurization temperature, and sulfur content on the CuInS2 thin films were investigated. Phases and structures were characterized by powder X-ray diffraction and Raman spectroscopy; surface morphology was characterized by Scanning Electron Microscopy; optical and electrical properties were characterized by UV-Vis absorption and Mott-Schottky curves, respectively. As a result, the optimal well-crystallized CuInS2 films preparation parameters were determined to be deposition potential of −0.8 V, Cu2+/In3+ ratio of 1.4, sulfur content of 1 g, and the sulfurization temperature of 550°C for 1 h; CuInS2 thin films prepared by one-step electrodeposition present the p-type semiconductor, with thickness about 4-5 μm and their optical band gaps in the range of 1.53~1.55 eV.

Properties of pulsed electrodeposited CdIn2S4 thin film

International Nuclear Information System (INIS)

Hankare, P.P.; Kokate, A.V.; Asabe, M.R.; Delekar, S.D.; Chougule, B.K.

2006-01-01

CdIn 2 S 4 thin films are prepared by pulsed electrodeposition technique over F:SnO 2 glass and stainless steel substrates in galvanostatic mode from an aqueous acidic bath containing CdSO 4 , InCl 3 and Na 2 S 2 O 3 . The growth kinetics of the film was studied and the deposition parameters such as electrolyte bath concentration, bath temperature, time of deposition, deposition current, and pH of the electrolyte bath are optimized. X-ray diffraction (XRD) analysis of the as deposited and annealed films showed the presence of polycrystalline nature. Energy dispersive analysis (EDAX) spectrum of the surface composition confirms the nearly stoichiometric CdIn 2 S 4 nature of the film. Surface morphology studies by scanning electron microscope (SEM) shows that, the deposited films are well adherent and grains are uniformly distributed over the surface of substrate. The optical transmission spectra show a direct band gap value of 2.16 eV

Effects of CdCl2 on the growth of CdTe on CdS films for solar cells by isothermal close-spaced vapor transport

International Nuclear Information System (INIS)

Vaccaro, P.O.; Meyer, G.O.; Saura, J.

1991-01-01

CdS/CdTe solar cells were made by depositing CdTe films by an isothermal close-spaced vapor transport method on sintered CdS/glass substrates. The influence of amounts of CdCl2 ranging from 0 wt% to 8 wt% in the CdTe source on the solar cells performance was studied. Increasing the CdCl2 content enhances the CdTe grainsize but degrades the spectral response and increases the reverse saturation current. An optimal CdCl2 concentration of 1 wt% was found for a growth temperature of 620 deg C. (Author)

Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Tsui, Lok-kun; Lu, Jiwei; Zangari, Giovanni, E-mail: gz3e@virginia.edu [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Hildebrand, Helga; Schmuki, Patrik [Department for Materials Science LKO, University of Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen (Germany)

2013-11-11

The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.

Structural and electrical properties of CZTS thin films by electrodeposition

Science.gov (United States)

Rao, M. C.; Basha, Sk. Shahenoor

2018-06-01

CZTS (Cu2ZnSnS4) thin films were coated on ITO glass substrates by single bath electrodeposition technique. The prepared films were subsequently characterized by XRD, SEM, FTIR, UV-visible spectroscopy and Raman studies. The thickness of the thin films was measured by wedge method. X-ray diffraction studies revealed the formation of polycrystalline phase. The morphological surface of the prepared thin films was examined by SEM and AFM and showed the presence of microcrystals on the surface of the samples. The elemental analysis and their compositional ratios present in the samples were confirmed by the energy dispersive X-ray analysis. Functional groups and the position of band structure involved in the materials were confirmed by FTIR. Optical absorption studies were performed on the prepared thin films in the wavelength ranging from 300 to 1000 nm and the energy bandgap values were found to be in the range from 1.39 to 1.60 eV. Raman spectral peak which was observed at 360 cm-1 correspond to kesterite phase, was formed due to the vibration of the molecules. Electrical measurements confirmed the nature of the thin film depending on the charge concentration present in the samples.

Growth and characterization of ZnO thin films prepared by electrodeposition technique

Energy Technology Data Exchange (ETDEWEB)

Fahoume, M.; Maghfoul, O.; Aggour, M. [L.P.M.C., Faculte des Sciences, Universite Ibn Tofail, BP. 133-14000 Kenitra (Morocco); Hartiti, B. [L.P.M.A.E.R., Faculte des Sciences et Techniques, B.P. 146 Mohammedia (Morocco); Chraibi, F.; Ennaoui, A. [L.P.M., Faculte des Sciences, Universite Mohammed V, BP.1014 Rabat (Morocco)

2006-06-15

ZnO thin films were deposited on either indium tin oxide-coated glass or copper substrate by the electrodeposition process, using zinc chloride and flowing air as precursors. The effect of pH on the structural and morphological ZnO films was studied and the optimum deposition conditions have been outlined. The kinetics of the growth of the films have been investigated. We note that the rate of deposition of ZnO in an acidic solution was larger than in a basic solution. The structure of the films was studied using X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The surface morphology and thickness of the films were determined using scanning electron microscopy. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure (zincite) at pH 4. The optical transmittance of ZnO decreases with varying film thickness. The optical energy bandgap was found to be 3.26eV. (author)

Electrodeposited porous and amorphous copper oxide film for application in supercapacitor

Energy Technology Data Exchange (ETDEWEB)

Patake, V.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Joshi, S.S. [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of); Lokhande, C.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: l_chandrakant@yahoo.com; Joo, Oh-Shim [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: joocat@kist.rre.kr

2009-03-15

In present study, the porous amorphous copper oxide thin films have been deposited from alkaline sulphate bath. The cathodic electrodeposition method was employed to deposit copper oxide film at room temperature on stainless steel substrate. Their structural and surface morphological properties were investigated by means of X-ray diffraction (XRD) and scanning electron micrograph (SEM), respectively. To propose this as a new material for possible application in the supercapacitor, its electrochemical properties have been studied in aqueous 1 M Na{sub 2}SO{sub 4} electrolyte using cyclic voltammetry. The structural analysis from XRD pattern showed the formation of amorphous copper oxide film on the substrate. The surface morphological studies from scanning electron micrographs revealed the formation of porous cauliflower-like copper oxide film. The cyclic voltammetric curves showed symmetric nature and increase in capacitance with increase in film thickness. The maximum specific capacitance of 36 F g{sup -1} was exhibited for the 0.6959 mg cm{sup -2} film thickness. This shows that low-cost copper oxide electrode will be a potential application in supercapacitor.

Improvements in CdTe- and CIGS-based thin-film solar cells and investigation on new materials for photovoltaic applications.

OpenAIRE

Rosa, Greta

2018-01-01

Currently, thin-film solar cells are one of the most promising technologies for low-cost renewable energy production. CdTe- and CuInGaSe2-based cells, which achieved record efficiencies of 22.1% and 22.6% respectively, are the most attractive among thin-film solar cells. These high efficiencies have had a huge influence in making them highly competitive in the photovoltaic market, with an estimated final cost per module lower than US $ 0.50 per peak-watt. At the Thin Film Laboratory of the...

Solid-state electrochemiluminescence sensor through the electrodeposition of Ru(bpy)32+/AuNPs/chitosan composite film onto electrode

International Nuclear Information System (INIS)

Yun Wen; Xu Ying; Dong Ping; Ma Xiongxiong; He Pingang; Fang Yuzhi

2009-01-01

Tris(2,2'-bipyridyl)ruthenium(II) (Ru(bpy) 3 2+ ) has been successfully immobilized onto electrode through the electrodeposition of Ru(bpy) 3 2+ /AuNPs/chitosan composite film. In the experiments, chitosan solution was first mixed with Au nanoparticles (AuNPs) and Ru(bpy) 3 2+ . Then, during chronopotentiometry experiments in this mixed solution, a porous 3D network structured film containing Ru(bpy) 3 2+ , AuNPs and chitosan has been electrodeposited onto cathode due to the deposition of chitosan when pH value is over its pK a (6.3). The applied current density is crucial to the film thickness and the amount of the entrapped Ru(bpy) 3 2+ . Additionally, these doping Ru(bpy) 3 2+ in the composite film maintained their intrinsic electrochemical and electrochemiluminescence activities. Consequently, this Ru(bpy) 3 2+ /AuNPs/chitosan modified electrode has been used in ECL to detect tripropylamine, and the detection limit was 5 x 10 -10 M

Optical properties and surface topography of CdCl2 activated CdTe thin films

Science.gov (United States)

Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

2018-05-01

The effect of post-CdCl2 heat treatment on optical properties and surface topography of evaporated CdTe thin films is investigated. The pristine and thermally annealed films were subjected to UV-Vis spectrophotometer and atomic force microscopy (AFM) to investigate the optical properties and surface topography, respectively. The absorbance is found to be maximum (˜90%) at 320°C temperature and transmittance found to be minimum and almost constant in ultraviolet and visible regions. The direct band gap is increased from 1.42 eV to 2.12 eV with post-CdCl2 annealing temperature. The surface topography revealed that the uniformity is improved with annealing temperature and average surface roughness is found in the range of 83.3-144.3 nm as well as grains have cylindrical hill-like shapes. The investigated results indicate that the post-CdCl2 treated films annealed at 320°C may be well-suitable for thin film solar cells as an absorber layer.

Influence of titanium oxide films on copper nucleation during electrodeposition

International Nuclear Information System (INIS)

Chang, Hyun K.; Choe, Byung-Hak; Lee, Jong K.

2005-01-01

Copper electrodeposition has an important industrial role because of various interconnects used in electronic devices such as printed wire boards. With an increasing trend in device miniaturization, in demand are void-free, thin copper foils of 10 μm thick or less with a very low surface profile. In accordance, nucleation kinetics of copper was studied with titanium cathodes that were covered with thin, passive oxide films of 2-3 nm. Such an insulating oxide layer with a band gap of 3 eV is supposed to nearly block charge transfer from the cathode to the electrolyte. However, significant nucleation rates of copper were observed. Pipe tunneling mechanism along a dislocation core is reasoned to account for the high nucleation kinetics. A dislocation core is proposed to be a high electron tunneling path with a reduced energy barrier and a reduced barrier thickness. In supporting the pipe tunneling mechanism, both 'in situ' and 'ex situ' scratch tests were performed to introduce extra dislocations into the cathode surface, that is, more high charge paths via tunneling, before electrodeposition

Microstructure and properties of manganese dioxide films prepared by electrodeposition

International Nuclear Information System (INIS)

Jacob, G. Moses; Zhitomirsky, I.

2008-01-01

Nanostructured manganese dioxide films were obtained by galvanostatic, pulse and reverse pulse electrodeposition from 0.01 to 0.1 M KMnO 4 solutions. The deposition yield was investigated by in situ monitoring the deposit mass using a quartz crystal microbalance (QCM). Obtained films were studied by electron microscopy, X-ray diffraction analysis, energy dispersive spectroscopy, thermogravimetric and differential thermal analysis. The QCM and electron microscopy data were utilized for the investigation of deposition kinetics and film formation mechanism. It was shown that the deposition rate and film microstructure could be changed by variation of deposition conditions. The method allowed the fabrication of dense or porous films. The thickness of dense films was limited to ∼0.1 μm due to the insulating properties of manganese dioxide and film cracking, attributed to drying shrinkage. Porous and crack-free 1-2 μm films were obtained using galvanostatic or reverse pulse deposition from 0.02 M KMnO 4 solutions. It was shown that film porosity is beneficial for the charge transfer during deposition and crack prevention in thick films. Moreover, porous nanostructured films showed good capacitive behavior for applications in electrochemical supercapacitors. The porous nanostructured films prepared in the reverse pulse regime showed higher specific capacitance (SC) compared to the SC of the galvanostatic films. The highest SC of 279 F/g in a voltage window of 1 V was obtained in 0.1 M Na 2 SO 4 solutions at a scan rate of 2 mV/s

Rocking disc electro-deposition of copper films on Mo/MoSe{sub 2} substrates

Energy Technology Data Exchange (ETDEWEB)

Cummings, Charles Y.; Frith, Paul E. [Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Zoppi, Guillaume; Forbes, Ian [Northumbria Photovoltaics Applications Centre, Northumbria University, NE1 8ST (United Kingdom); Rogers, Keith D. [Cranfield Health, Cranfield University, Shrivenham Campus, Swindon, SN6 8LA (United Kingdom); Lane, David W. [Department of Applied Science, Security and Resilience, Cranfield University, Shrivenham, Swindon, SN6 8LA (United Kingdom); Marken, Frank, E-mail: F.Marken@bath.ac.uk [Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom)

2011-08-31

A novel electro-deposition method based on a rocking disc system with {pi}/3 amplitude and variable frequency is introduced. Uniform copper films were deposited from a 0.1 M CuSO{sub 4}/3.0 M NaOH/0.2 M sorbitol bath directly onto 12.1 cm{sup 2} Mo/MoSe{sub 2} substrates with X-ray diffraction showing a thickness variation of {+-}5% over this area. Investigation of the mass transport conditions suggests (i) uniform diffusion over the sample, (ii) a rate of mass transport proportional to the square root of the rocking rate, and (iii) turbulent conditions, which are able to dislodge gas bubbles during electro-deposition.

Characterization and corrosion resistance of anodic electrodeposited titanium oxide/phosphate films on Ti-20Nb-10Zr-5Ta bioalloy

Energy Technology Data Exchange (ETDEWEB)

Popa, Monica; Vasilescu, Cora; Drob, Silviu I.; Osiceanu, Petre; Anastasescu, Mihai; Calderon-Moreno, Jose M., E-mail: josecalderonmoreno@yahoo.com [Institute of Physical Chemistry ' Ilie Murgulescu' of the Romanian Academy, Bucharest (Romania)

2013-07-15

In this work, the anodic galvanostatic electrodeposition of an oxidation film containing phosphates on Ti-20Nb-10Zr-5Ta alloy from orthophosphoric acid solution is presented. Its composition was determined by X-ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman micro-spectroscopy, and its topography by atomic force microscopy (AFM). The corrosion resistance of the coated alloy in simulated human fluid (by linear polarization method and monitoring of open circuit potentials, corresponding open circuit potential gradients) as well as the characterization of the coating (by Raman spectroscopy and depth profile X-ray photoelectron spectroscopy (XPS)) deposited in a period of 300 h soaking in simulated human body fluid were studied. The electrodeposited film was composed of amorphous titanium dioxide and contained phosphate groups. The corrosion resistance of the coated Ti-20Nb-10Zr-5Ta alloy in neutral and alkaline Ringer's solutions was higher than that of the bare alloy due to the protective properties of the electrodeposited film. The corrosion parameters improved over time as result of the thickening of the surface film by the deposition from the physiological solution. The deposited coating presented a variable composition in depth: at the deeper layer nucleated nanocrystalline hydroxyapatite and at the outer layer amorphous calcium phosphate. (author)

Characterization and corrosion resistance of anodic electrodeposited titanium oxide/phosphate films on Ti-20Nb-10Zr-5Ta bioalloy

International Nuclear Information System (INIS)

Popa, Monica; Vasilescu, Cora; Drob, Silviu I.; Osiceanu, Petre; Anastasescu, Mihai; Calderon-Moreno, Jose M.

2013-01-01

In this work, the anodic galvanostatic electrodeposition of an oxidation film containing phosphates on Ti-20Nb-10Zr-5Ta alloy from orthophosphoric acid solution is presented. Its composition was determined by X-ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman micro-spectroscopy, and its topography by atomic force microscopy (AFM). The corrosion resistance of the coated alloy in simulated human fluid (by linear polarization method and monitoring of open circuit potentials, corresponding open circuit potential gradients) as well as the characterization of the coating (by Raman spectroscopy and depth profile X-ray photoelectron spectroscopy (XPS)) deposited in a period of 300 h soaking in simulated human body fluid were studied. The electrodeposited film was composed of amorphous titanium dioxide and contained phosphate groups. The corrosion resistance of the coated Ti-20Nb-10Zr-5Ta alloy in neutral and alkaline Ringer's solutions was higher than that of the bare alloy due to the protective properties of the electrodeposited film. The corrosion parameters improved over time as result of the thickening of the surface film by the deposition from the physiological solution. The deposited coating presented a variable composition in depth: at the deeper layer nucleated nanocrystalline hydroxyapatite and at the outer layer amorphous calcium phosphate. (author)

Laterally enhanced growth of electrodeposited Au to form ultrathin films on nonconductive surfaces

International Nuclear Information System (INIS)

Kobayashi, Chiaki; Saito, Mikiko; Homma, Takayuki

2012-01-01

We investigated the laterally enhanced growth of electrodeposited Au for fabricating nanogap electrodes. To enhance the lateral growth, we carried out electrodeposition over patterned electrodes onto a SiO 2 surface modified with self-assembled monolayers (SAMs) or dendrimers with amine groups. The morphology and thickness of the Au films were controlled by adjusting deposition conditions such as duration, applied potential, and Au ion concentration in the bath. To investigate the mechanism of the laterally enhanced growth, the surface states of SAM- or dendrimer-modified SiO 2 were analyzed by X-ray photoelectron spectroscopy (XPS). The XPS results indicate the existence of organic molecules and Au ions on the SiO 2 surface, which suggests that laterally enhanced growth is induced by the Au ions coordinated on the amine groups of the organic molecules. To further analyze the mechanism of the laterally enhanced growth, we investigated the relationship between the morphology of the laterally enhanced growth of Au and the amount of Au ions on organic molecules. The laterally enhanced growth of Au is expected to be useful for fabricating thin film nanogap electrodes.

Studies on electrodeposited silver sulphide thin films by double exposure holographic interferometry

International Nuclear Information System (INIS)

Prabhune, V.B.; Shinde, N.S.; Fulari, V.J.

2008-01-01

Silver sulphide (Ag 2 S) thin films have been deposited on to stainless steel and fluorine doped tin oxide (FTO) glass substrates by the electrodeposition process, in potentiostatic mode using silver nitrate (AgNO 3 ), sodium thiosulphate (Na 2 S 2 O 3 ) as a precursor sources and Ethylene Diamine Tetra Acetic Acid (EDTA) was used as a complexing agent. The deposition potential of the compound was investigated by cyclic voltammetry. The structural and optical properties of the deposited films have been studied using X-ray diffraction (XRD) and optical absorption techniques, respectively. XRD studies reveal that the films are polycrystalline with monoclinic crystal structure. Optical absorption study shows the presence of direct transition with bandgap energy 1.1 eV. The determination of thickness and stress of the Ag 2 S thin films was carried out by Double Exposure Holographic Interferometry (DEHI) technique.

Optical and structural characterization of oleic acid-stabilized CdTe nanocrystals for solution thin film processing

Directory of Open Access Journals (Sweden)

Claudio Davet Gutiérrez-Lazos

2014-06-01

Full Text Available This work presents results of the optical and structural characterization of oleic acid-stabilized cadmium telluride nanocrystals (CdTe-NC synthesized by an organometallic route. After being cleaned, the CdTe-NC were dispersed in toluene to obtain an ink-like dispersion, which was drop-cast on glass substrate to deposit a thin film. The CdTe-NC colloidal dispersion as well as the CdTe drop-cast thin films were characterized with regard to the optical and structural properties. TEM analysis indicates that the CdTe-NC have a nearly spherical shape (3.5 nm as mean size. Electron diffraction and XRD diffraction analyses indicated the bulk-CdTe face-centered cubic structure for CdTe-NC. An additional diffraction line corresponding to the octahedral Cd3P2 was also detected as a secondary phase, which probably originates by reacting free cadmium ions with trioctylphosphine (the tellurium reducing agent. The Raman spectrum exhibits two broad bands centered at 141.6 and 162.3 cm−1, which could be associated to the TO and LO modes of cubic CdTe nanocrystals, respectively. Additional peaks located in the 222 to 324 cm−1 range, agree fairly well with the wavenumbers reported for TO modes of octahedral Cd3P2.

Enhanced electrochemiluminescence of CdTe quantum dots with carbon nanotube film and its sensing of methimazole

International Nuclear Information System (INIS)

Hua Lijuan; Han Heyou; Chen Haibo

2009-01-01

A novel analytical method was reported based on electrochemiluminescence (ECL) of CdTe quantum dots (QDs) using carbon nanotube (CNT) modified glass carbon (GC) electrode. It was found that the CNT film on the GC electrode could greatly enhance the ECL intensity of CdTe QDs dispersed in aqueous solution, and the ECL peak potential and ECL onset potential both shifted positively. Influences of some factors on the ECL intensity were investigated using CNT modified GC electrode, and a high sensitive method for the determination of methimazole was developed under the optimal conditions. The ECL intensity decreased linearly in the concentration range of 1.0 x 10 -9 to 4.0 x 10 -7 M for methimazole with the relative coefficient of 0.995, which showed finer sensitivity than that at bare electrode. Thus, CNT modified electrode would have a great merit to expand the application of QD ECL

Electrodeposition of Zn and Cu–Zn alloy from ZnO/CuO precursors in deep eutectic solvent

Energy Technology Data Exchange (ETDEWEB)

Xie, Xueliang [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Zou, Xingli, E-mail: xinglizou@shu.edu.cn [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Lu, Xionggang, E-mail: luxg@shu.edu.cn [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Lu, Changyuan; Cheng, Hongwei; Xu, Qian [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Zhou, Zhongfu [State Key Laboratory of Advanced Special Steel & Shanghai Key Laboratory of Advanced Ferrometallurgy & School of Materials Science and Engineering, Shanghai University, Shanghai 200072 (China); Institute of Mathematics and Physics, Aberystwyth University, Aberystwyth SY23 3BZ (United Kingdom)

2016-11-01

Graphical abstract: Micro/nanostructured Zn and Cu–Zn alloy films have been electrodeposited directly from ZnO/CuO precursors in ChCl/urea-based DES, the typical nucleation-growth mechanism and the micro/nanostructures-formation process are determined. Display Omitted - Highlights: • Micro/nanostructured Zn films have been electrodeposited directly from ZnO precursor in deep eutectic solvent (DES). • The morphology of the Zn electrodeposits depends on the cathodic potential and temperature. • The electrodeposited Zn films exhibit homogeneous morphologies with controllable particle sizes and improved corrosion resistance. • Cu–Zn alloy films have also been electrodeposited directly from their metal oxides precursors in DES. - Abstract: The electrodeposition of Zn and Cu–Zn alloy has been investigated in choline chloride (ChCl)/urea (1:2 molar ratio) based deep eutectic solvent (DES). Cyclic voltammetry study demonstrates that the reduction of Zn(II) to Zn is a diffusion-controlled quasi-reversible, one-step, two electrons transfer process. Chronoamperometric investigation indicates that the electrodeposition of Zn on a Cu electrode typically involves three-dimensional instantaneous nucleation with diffusion-controlled growth process. Micro/nanostructured Zn films can be obtained by controlling the electrodeposition potential and temperature. The electrodeposited Zn crystals preferentially orient parallel to the (101) plane. The Zn films electrodeposited under more positive potentials and low temperatures exhibit improved corrosion resistance in 3 wt% NaCl solution. In addition, Cu–Zn alloy films have also been electrodeposited directly from CuO–ZnO precursors in ChCl/urea-based DES. The XRD analysis indicates that the phase composition of the electrodeposited Cu–Zn alloy depends on the electrodeposition potential.

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

2014-09-15

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

International Nuclear Information System (INIS)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude

2014-01-01

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Co{sub 100−x}Fe{sub x} magnetic thick films prepared by electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Aguirre, M. del C., E-mail: carmenaguirre@famaf.unc.edu.ar [Instituto de Física Enrique Gaviola-Conicet-Facultad de Matemática, Astronomía y Física, Universidad Nacional de Córdoba, Ciudad Universitaria, 5000 Córdoba (Argentina); Farías, E. [Facultad de Ciencias Químicas, Universidad Nacional de Córdoba, Ciudad Universitaria, 5000 Córdoba (Argentina); Abraham, J.; Urreta, S.E. [Facultad de Matemática, Astronomía y Física, Universidad Nacional de Córdoba, Ciudad Universitaria, 5000 Córdoba (Argentina)

2015-04-05

Highlights: • Low iron containing films are compact, with rounded, relatively uniform surfaces. • Larger Fe contents exhibit nanowall networks covering the surface. • Coercivity in the out of plane configuration is larger than in the easy axis direction. • Co-rich films nucleate and grow by a 3DP diffusion controlled mechanism. • For equiatomic Fe{sub 50}Co{sub 50} films, nucleation tends to become instantaneous. - Abstract: Co–Fe films are grown onto plane pre-treated Cu foils; the effects of the alloy composition on the morphology and the crystal texture of the electrodeposited films and their anisotropic magnetic hysteresis properties are explored. Nucleation and crystallization mechanisms in these Co-rich layers are also investigated with pulse-reverse plating techniques, using the first cathodic pulse current–time transients. In the diffusion controlled regime the deposition mechanism is found to involve progressive nucleation with three-dimensional (3D) growth, except for the equiatomic Fe{sub 50}Co{sub 50} solution where nucleation tends to become instantaneous. The different morphologies and size scales observed are described and correlated with coercivity. The films are electrodeposited onto electrochemically pre-treated Cu substrates from feeds of nominal Fe/Co mol ratios between 0/100 and 50/50. The composition of the deposited layers, as determined by energy dispersive X-ray spectroscopy, are quite close to the nominal values. Cyclic voltammetry determinations exhibit only a single reduction process on the cathode, indicating that a unique (Co{sub 100−x}Fe{sub x}) phase grows. Depending on composition and on the substrate pre-treatment, these layers exhibit textures with features of different sizes. X ray diffraction patterns indicate that the nanostructures with Fe contents above 20 at.% crystallize in a body-centered cubic cell, while samples with Fe contents below this value are fcc. Regarding the effect of composition on the

Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

International Nuclear Information System (INIS)

Di Stefano, M.C.; Gilabert, U.; Heredia, E.; Trigubo, A.B.

2004-01-01

Hg 1-x Cd x Te (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd 0.96 Zn 0.04 Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Local Electrical Response in Alkaline-Doped Electrodeposited CuInSe2/Cu Films

Directory of Open Access Journals (Sweden)

Javier A. Barón-Miranda

2016-12-01

Full Text Available The local electrical response in alkaline-doped CuInSe2 films prepared by single-step electrodeposition onto Cu substrates was studied by current-sensing atomic force microscopy. The CuInSe2 (CIS films were prepared from single baths containing the dopant ions (Li, Na, K or Cs and were studied by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and photocurrent response. Increased crystallinity and surface texturing as the ion size increased were observed, as well as an enhanced photocurrent response in Cs-doped CIS. Li- and Na-doped films had larger conductivity than the undoped film while the K- and Cs-doped samples displayed shorter currents and the current images indicated strong charge accumulation in the K- and Cs-doped films, forming surface capacitors. Corrected current-sensing AFM IV curves were adjusted with the Shockley equation.

Controlling electrodeposited ultrathin amorphous Fe hydroxides film on V-doped nickel sulfide nanowires as efficient electrocatalyst for water oxidation

Science.gov (United States)

Shang, Xiao; Yan, Kai-Li; Lu, Shan-Shan; Dong, Bin; Gao, Wen-Kun; Chi, Jing-Qi; Liu, Zi-Zhang; Chai, Yong-Ming; Liu, Chen-Guang

2017-09-01

Developing cost-effective electrocatalysts with both high activity and stability remains challenging for oxygen evolution reaction (OER) in water electrolysis. Herein, based on V-doped nickel sulfide nanowire on nickel foam (NiVS/NF), we further conduct controllable electrodeposition of Fe hydroxides film on NiVS/NF (eFe/NiVS/NF) to further improve OER performance and stability. For comparison, ultrafast chemical deposition of Fe hydroxides on NiVS/NF (uFe/NiVS/NF) is also utilized. V-doping of NiVS/NF may introduce more active sites for OER, and nanowire structure can expose abundant active sites and facilitate mass transport. Both of the two depositions generate amorphous Fe hydroxides film covering on the surface of nanowires and lead to enhanced OER activities. Furthermore, electrodeposition strategy realizes uniform Fe hydroxides film on eFe/NiVS/NF confirmed by superior OER activity of eFe/NiVS/NF than uFe/NiVS/NF with relatively enhanced stability. The OER activity of eFe/NiVS/NF depends on various electrodepositon time, and the optimal time (15 s) is obtained with maximum OER activity. Therefore, the controllable electrodeposition of Fe may provide an efficient and simple strategy to enhance the OER properties of electrocatalysts.

Surface plasmon effect in electrodeposited diamond-like carbon films for photovoltaic application

Science.gov (United States)

Ghosh, B.; Ray, Sekhar C.; Espinoza-González, Rodrigo; Villarroel, Roberto; Hevia, Samuel A.; Alvarez-Vega, Pedro

2018-04-01

Diamond-like carbon (DLC) films and nanocrystalline silver particles containing diamond-like carbon (DLC:Ag) films were electrodeposited on n-type silicon substrate (n-Si) to prepare n-Si/DLC and n-Si/DLC:Ag heterostructures for photovoltaic (PV) applications. Surface plasmon resonance (SPR) effect in this cell structure and its overall performance have been studied in terms of morphology, optical absorption, current-voltage characteristics, capacitance-voltage characteristics, band diagram and external quantum efficiency measurements. Localized surface plasmon resonance effect of silver nanoparticles (Ag NPs) in n-Si/DLC:Ag PV structure exhibited an enhancement of ∼28% in short circuit current density (JSC), which improved the overall efficiency of the heterostructures.

Characterization of black and white chromium electrodeposition films. Surface and optical properties

Energy Technology Data Exchange (ETDEWEB)

Aguilar, M.; Palomar-Pardave, M. [Departamento de Materiales, UAM-Azcapotzalco, Av. San Pablo No. 180, Col. Reynosa Tamaulipas, Mexico D.F. 02200 (Mexico); Barrera, E. [Departamento de Ingenieria de Procesos e Hidraulica, Universidad Autonoma Metropolitana - Iztapalapa, Av. Rafael Atlixco No. 186, Col. Vicentina, Mexico, D.F. 09340 (Mexico); Huerta, L.; Muhl, S. [Instituto de Investigaciones en Materiales, UNAM, Mexico, D.F. 04510 (Mexico)

2003-11-01

Thin films of black and white chromium have been prepared by electrodeposition on stainless steel substrates. The potentiodynamic and potentiostatic technique was used in order to prepare these materials. XRD, XPS, SEM and spectral reflectance in the UV-Visible-near IR and medium IR ranges, for both films coatings were characterized. From the SEM analysis, it was found while the black chromium has a lamellar morphology that leads to a strong dispersion level, the white one has a flat morphology. The chemical composition of these thin films was determined by XRD and XPS technique. The XRD results showed that in both cases chromium is the main bulk chemical compound in both films. However, from XPS analysis of these surfaces, it was possible to determine that the most external layers of the films are made of different kinds of chromium compounds. The black chromium film has better optical properties to transform solar energy into thermal energy, and these properties remain practically constant even when heat treated to a high temperature, 400 C. On the other hand the white chromium film is a better substrate for hydrogen evolution reactions than the black one.

The influence of different electrodeposition E/t programs on the photoelectrochemical properties of α-Fe2O3 thin films

International Nuclear Information System (INIS)

Schrebler, Ricardo S.; Altamirano, Hernan; Grez, Paula; Herrera, Francisco V.; Munoz, Eduardo C.; Ballesteros, Luis A.; Cordova, Ricardo A.; Gomez, Humberto; Dalchiele, Enrique A.

2010-01-01

In this work morphological, structural and photoelectrochemical properties of n-type α-Fe 2 O 3 (hematite) thin films synthetized by means of two different electrochemical procedures: potential cycling electrodeposition (PC) and potential pulsed electrodeposition (PP) have been studied. The X-ray diffraction measurements showed that the films obtained after a thermal treatment at 520 o C present a nanocrystalline character. Scanning electron microscopy allowed finding that hematite films obtained by PP technique exhibit nanostructured morphology. The electrochemical and capacitance (Mott-Schottky and parallel capacitance) measurements showed that when in the PC and PP procedures the anodic limit E λ,A is being made more anodic, a decrease of the majority carriers concentration (N D ) and the surface states number has been observed. The photovoltammetry measurements indicated that the hematite films formed with the PP technique present a photocurrent one order of magnitude higher than the ones exhibited by the iron oxide films formed by PC. For instance, PP hematite films exhibit photovoltaic conversion efficiencies of 0.96% which are 2.5 times higher than the corresponding to the PC ones (0.38%). The maximum incident photon-to-current efficiency measured at λ = 370 and 600 nm was observed for hematite films grown by the PP procedure. By means of the photocurrent transient technique a decrease in the recombination process for those samples synthesized by PP was observed. The results obtained are discussed considering the influence of the anodic limit of the potential employed during the preparation of the iron oxyhydroxide (β-FeOOH) precursor film, all of this related to a decrease of the oxygen defects in this material and to a decrease of Fe(II) amount that is formed during the electrodeposition process.

Electrodeposition of Metal Matrix Composites and Materials Characterization for Thin-Film Solar Cells

Science.gov (United States)

2017-12-04

Air Mass CNT Carbon Nanotubes DIV Dark Current -Voltage DMA Dynamic Mechanical Analysis EL Electroluminescence FEM Finite Element Method IMM...AFRL-RV-PS- AFRL-RV-PS- TR-2017-0174 TR-2017-0174 ELECTRODEPOSITION OF METAL MATRIX COMPOSITES AND MATERIALS CHARACTERIZATION FOR THIN-FILM SOLAR...research which is exempt from public affairs security and policy review in accordance with AFI 61-201, paragraph 2.3.5.1. This report is available to

Development of MoOx thin films as back contact buffer for CdTe solar cells in substrate configuration

International Nuclear Information System (INIS)

Gretener, C.; Perrenoud, J.; Kranz, L.; Baechler, C.; Yoon, S.; Romanyuk, Y.E.; Buecheler, S.; Tiwari, A.N.

2013-01-01

Molybdenum oxide compounds exhibit unique electrical and optical properties depending on oxygen vacancy concentration and composition and therefore, have recently attracted a lot of attention as a hole transport layer in various devices. In this work CdTe solar cells in substrate configuration were grown with evaporated MoO x back contact buffer layers and efficiencies of up to 10% could be achieved without using Cu in the back contact processing. The buffer layer – at the CdTe/back contact interface – in the finished cell was found to consist of MoO 2 phase instead of the expected MoO 3 phase as observed in as-deposited or annealed MoO x layers without CdTe deposition. In order to obtain MoO x buffer layers with desired stoichiometry, MoO x thin films were deposited by radio-frequency sputtering under different growth conditions. The chemical phase, composition, microstructure and optical properties of such layers were studied for their possible use in CdTe solar cells. - Highlights: ► MoO x is used as a back contact buffer in CdTe solar cells in substrate configuration. ► Efficiency of 10.0% was achieved without the addition of Cu. ► The back contact buffer in the finished device consists only of MoO 2 . ► Phases and microstructure of MoO x can be controlled by sputtering conditions

Vapor transport deposition of large-area polycrystalline CdTe for radiation image sensor application

Energy Technology Data Exchange (ETDEWEB)

Yang, Keedong; Cha, Bokyung; Heo, Duchang; Jeon, Sungchae [Korea Electrotechnology Research Institute, 111 Hanggaul-ro, Ansan-si, Gyeonggi-do 426-170 (Korea, Republic of)

2014-07-15

Vapor transport deposition (VTD) process delivers saturated vapor to substrate, resulting in high-throughput and scalable process. In addition, VTD can maintain lower substrate temperature than close-spaced sublimation (CSS). The motivation of this work is to adopt several advantages of VTD for radiation image sensor application. Polycrystalline CdTe films were obtained on 300 mm x 300 mm indium tin oxide (ITO) coated glass. The polycrystalline CdTe film has columnar structure with average grain size of 3 μm ∝ 9 μm, which can be controlled by changing the substrate temperature. In order to analyze electrical and X-ray characteristics, ITO-CdTe-Al sandwich structured device was fabricated. Effective resistivity of the polycrystalline CdTe film was ∝1.4 x 10{sup 9}Ωcm. The device was operated under hole-collection mode. The responsivity and the μτ product estimated to be 6.8 μC/cm{sup 2}R and 5.5 x 10{sup -7} cm{sup 2}/V. The VTD can be a process of choice for monolithic integration of CdTe thick film for radiation image sensor and CMOS/TFT circuitry. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Composition controlled preparation of Cu–Zn–Sn precursor films for Cu{sub 2}ZnSnS{sub 4} solar cells using pulsed electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Dang, Wenping; Ren, Xiaodong; Zi, Wei; Jia, Lujian [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Liu, Shengzhong, E-mail: szliu@dicp.ac.cn [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, School of Materials Science and Engineering, Shaanxi Normal University, Xi' an 710062 (China); Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian, 116023 (China)

2015-11-25

A pulsed electrodeposition technique is developed to prepare Cu–Zn–Sn (CZT) precursor films for the Cu{sub 2}ZnSnS{sub 4} (CZTS) solar cells. The CZT precursor films are co-deposited on Mo-coated substrate using a cyanide-free electrolyte containing Zn (II) and Sn (II) salts. During the deposition, CuSO{sub 4} solution is supplied at controlled rate using a peristaltic pump to effectively regulate Cu{sup 2+} concentration. In addition, C{sub 6}H{sub 5}Na{sub 3}O{sub 7} is used as a coordination ligand to further balance activities of the Cu{sup 2+}, Sn{sup 2+} and Zn{sup 2+}. The CZTS films are then prepared using a sulfurization process to convert the electrodeposited CZT precursors at 580 °C in a sulphur atmosphere. The annealed thin films are characterized by X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FE-SEM), EDAX and X-ray photoelectron spectroscopy (XPS) techniques for their structural, morphological, compositional and chemical properties. It is found that the addition rate of Cu (II) has significant effects on the properties of the CZTS thin films. The CZTS film prepared using the optimized copper addition rate (0.15 ml/min) shows pure kesterite phase, Cu-poor and Zn-rich composition, compact morphology and good band gap ∼1.45 eV. Solar cells using the structure glass/Mo/CZTS/CdS/i-ZnO/ZnO:Al achieves a respectable external quantum efficiency and solar cell efficiency. - Highlights: • Developed a composition controlled pulsed electrodeposition for CZTS solar cells. • Electrochemistry and CZT composition regulated by measured Cu supply rate. • Complex chemistry used to regulate ion activities and electrodeposition. • Achieved a respectable CZTS solar cell quantum efficiency.

Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

Science.gov (United States)

Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

2017-08-01

In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

Effect of pulse frequency and current density on anomalous composition and nanomechanical property of electrodeposited Ni-Co films

Energy Technology Data Exchange (ETDEWEB)

Chung, C.K., E-mail: ckchung@mail.ncku.edu.t [Department of Mechanical Engineering, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701 (China); Chang, W.T. [Department of Mechanical Engineering, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701 (China)

2009-07-01

Effect of pulse frequency and current density on the anomalous cobalt content and nanomechanical property of the electrodeposited nickel-cobalt (Ni-Co) films has been investigated. The composition, morphology, phase and hardness of the Ni-Co alloy films were examined by scanning electron microscope with an attached energy dispersive X-ray spectroscope, X-ray diffraction and nanoindentation techniques, respectively. The different Co composition of the Ni-Co films codeposited from the fixed sulfamate-chloride bath is subject to the pulse frequencies and current densities. The frequencies varied from 0 to 100 Hz and current densities varied from 1 to 20 ASD (ampere per square decimeter). The Co composition has no significant variation in pulse electrodeposition but it is greatly influenced by current densities from 22.53% at 1 ASD decreased to 13.39% at 20 ASD under DC codeposition. The mean hardness of Ni-Co films has no eminent change at a pulse frequency of 10-100 Hz but it decreases with current densities from 8.72 GPa (1 ASD) to 7.13 GPa (20 ASD). The smoother morphology can be obtained at higher pulse frequency or lower current density. Good Ni-Co films with high hardness and smooth morphology can be obtained by reducing current density and increasing pulse frequency.

Design Strategies for High-Efficiency CdTe Solar Cells

Science.gov (United States)

Song, Tao

With continuous technology advances over the past years, CdTe solar cells have surged to be a leading contributor in thin-film photovoltaic (PV) field. While empirical material and device optimization has led to considerable progress, further device optimization requires accurate device models that are able to provide an in-depth understanding of CdTe device physics. Consequently, this thesis is intended to develop a comprehensive model system for high-efficiency CdTe devices through applying basic design principles of solar cells with numerical modeling and comparing results with experimental CdTe devices. The CdTe absorber is central to cell performance. Numerical simulation has shown the feasibility of high energy-conversion efficiency, which requires both high carrier density and long minority carrier lifetime. As the minority carrier lifetime increases, the carrier recombination at the back surface becomes a limitation for cell performance with absorber thickness cell performance, since it can induce a large valence-band bending which suppresses the hole injection near the interface for the electron-hole recombination, but too large a spike is detrimental to photocurrent transport. In a heterojunction device with many defects at the emitter/absorber interface (high SIF), a thin and highly-doped emitter can induce strong absorber inversion and hence help maintain good cell performance. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. In terms of specific emitter materials, the calculations suggest that the (Mg,Zn)O alloy with 20% Mg, or a similar type-I heterojunction partner with moderate DeltaE C (e.g., Cd(S,O) or (Cd,Mg)Te with appropriate oxygen or magnesium ratios) should yield higher voltages and would therefore be better candidates for the CdTe-cell emitter. The CdTe/substrate interface is also of great importance, particularly in the growth of epitaxial

Synthesis of shape memory alloys using electrodeposition

Science.gov (United States)

Hymer, Timothy Roy

Shape memory alloys are used in a variety of applications. The area of micro-electro-mechanical systems (MEMS) is a developing field for thin film shape memory alloys for making actuators, valves and pumps. Until recently thin film shape memory alloys could only be made by rapid solidification or sputtering techniques which have the disadvantage of being "line of sight". At the University of Missouri-Rolla, electrolytic techniques have been developed that allow the production of shape memory alloys in thin film form. The advantages of this techniques are in-situ, non "line of sight" and the ability to make differing properties of the shape memory alloys from one bath. This research focused on the electrodeposition of In-Cd shape memory alloys. The primary objective was to characterize the electrodeposited shape memory effect for an electrodeposited shape memory alloy. The effect of various operating parameters such as peak current density, temperature, pulsing, substrate and agitation were investigated and discussed. The electrodeposited alloys were characterized by relative shape memory effect, phase transformation, morphology and phases present. Further tests were performed to optimize the shape memory by the use of a statistically designed experiment. An optimized shape memory effect for an In-Cd alloy is reported for the conditions of the experiments.

Commercial production of thin-film CdTe photovoltaic modules. 1995 annual report

Energy Technology Data Exchange (ETDEWEB)

Brog, T.K. [Golden Photon, Inc., CO (United States)

1997-02-01

This report presents a general overview of progress made in Golden Photon Inc.`s commercial production of thin-film CdTe photovoltaic modules. It describes the improvement in the number of batch runs processed through substrate deposition, all inter-connection, and encapsulation process steps; a progressive increase in the total number of panels processed each month; an improvement in cumulative process yields; and the continual attention given to modifying operating parameters of each major process step. The report also describes manpower status and staffing issues. The description of the status of subcontract progress includes engineering design; process improvement and development; cost improvement and raw materials; environment, safety, and health; and manufacturing cost and productivity optimization. Milestones and deliverables are also described.

Characterization of nanocrystalline cadmium telluride thin films ...

Indian Academy of Sciences (India)

Unknown

tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

Comparison of efficiency degradation in polycrystalline-Si and CdTe thin-film PV modules via accelerated lifecycle testing

Science.gov (United States)

Lai, T.; Potter, B. G.; Simmons-Potter, K.

2017-08-01

Thin-film solar cells normally have the shortest energy payback time due to their simpler mass-production process compared to polycrystalline-Si photovoltaic (PV) modules, despite the fact that crystalline-Si-based technology typically has a longer total lifetime and a higher initial power conversion efficiency. For both types of modules, significant aging occurs during the first two years of usage with slower long-term aging over the module lifetime. The PV lifetime and the return-on-investment for local PV system installations rely on long-term device performance. Understanding the efficiency degradation behavior under a given set of environmental conditions is, therefore, a primary goal for experimental research and economic analysis. In the present work, in-situ measurements of key electrical characteristics (J, V, Pmax, etc.) in polycrystalline-Si and CdTe thin-film PV modules have been analyzed. The modules were subjected to identical environmental conditions, representative of southern Arizona, in a full-scale, industrial-standard, environmental degradation chamber, equipped with a single-sun irradiance source, temperature, and humidity controls, and operating an accelerated lifecycle test (ALT) sequence. Initial results highlight differences in module performance with environmental conditions, including temperature de-rating effects, for the two technologies. Notably, the thin-film CdTe PV module was shown to be approximately 15% less sensitive to ambient temperature variation. After exposure to a seven-month equivalent compressed night-day weather cycling regimen the efficiency degradation rates of both PV technology types were obtained and will be discussed.

Ultrasoft and High Magnetic Moment CoFe Films Directly Electrodeposited from a B-Reducer Contained Solution

Directory of Open Access Journals (Sweden)

Baoyu Zong

2008-01-01

Full Text Available A methodology to fabricate ultrasoft CoFe nano-/microfilms directly via electrodeposition from a semineutral iron sulfate solution is demonstrated. Using boron-reducer as the additive, the CoFe films become very soft with high magnetic moment. Typically, the film coercivity in the easy and hard axes is 6.5 and 2.5 Oersted, respectively, with a saturation polarization up to an average of 2.45 Tesla. Despite the softness, these shining and smooth films still display a high-anisotropic field of ~45 Oersted with permeability up to 104. This kind of films can potentially be used in current and future magnetic recording systems as well as microelectronic and biotechnological devices.

Investigation of gallium redistribution processes during Cu(In,Ga)Se{sub 2} absorber formation from electrodeposited/annealed oxide precursor films

Energy Technology Data Exchange (ETDEWEB)

Sidali, T., E-mail: tarik.sidali@edf.fr; Duchatelet, A.; Chassaing, E.; Lincot, D.

2015-05-01

A way to prepare metallic precursors for CuIn{sub 1−x},Ga{sub x}Se{sub 2} (CIGS) solar cells has been recently introduced leading to efficiencies above 12.4%. It consists in the electrodeposition of Cu-In-Ga mixed oxides in an acidic nitrate aqueous solution followed by thermal reduction and selenization. This paper investigates, in a first part, the nucleation and growth mechanisms taking place during the co-electrodeposition of Cu-In-Ga oxide/hydroxide film. Scanning Electron Microscope observations coupled to Energy Dispersive X-ray spectrometry point out that the deposition is initiated by the formation of metallic copper nuclei. These nuclei enable the growth of Cu-In-Ga oxide film. This observation confirms that freshly deposited copper catalyzes nitrate reduction leading to an increase in the surface pH enabling the precipitation of the Cu-In-Ga hydroxides. In a second part, precursor films were elaborated with increasing Ga(NO{sub 3}){sub 3} concentration. After reduction of the films in hydrogen and selenization heat treatments, X-ray diffraction analysis shows the incorporation of Ga into the CIGS phase with increasing Ga content in the optimal composition range for photovoltaic applications (x = 0.25-0.34). Gallium composition profiles are evidenced in the films with a tendency to higher concentration near the Mo surface. Increasing annealing temperature allows a better homogenization of Ga in the film. The consequences are correlated to optoelectronic measurements (Eg and cell efficiency) with bandgap measurement and cell efficiencies (10 to 12%). - Highlights: • Electrodeposition starts with copper nucleation. • Gallium content in the precursor is tuned by Ga(III) concentration. • Increasing selenization temperature promotes Ga homogenization in CIGS.

Layered Ni(OH)2-Co(OH)2 films prepared by electrodeposition as charge storage electrodes for hybrid supercapacitors.

Science.gov (United States)

Nguyen, Tuyen; Boudard, Michel; Carmezim, M João; Montemor, M Fátima

2017-01-04

Consecutive layers of Ni(OH) 2 and Co(OH) 2 were electrodeposited on stainless steel current collectors for preparing charge storage electrodes of high specific capacity with potential application in hybrid supercapacitors. Different electrodes were prepared consisting on films of Ni(OH) 2 , Co(OH) 2 , Ni 1/2 Co 1/2 (OH) 2 and layered films of Ni(OH) 2 on Co(OH) 2 and Co(OH) 2 on Ni(OH) 2 to highlight the advantages of the new architecture. The microscopy studies revealed the formation of nanosheets in the Co(OH) 2 films and of particles agglomerates in the Ni(OH) 2 films. Important morphological changes were observed in the double hydroxides films and layered films. Film growth by electrodeposition was governed by instantaneous nucleation mechanism. The new architecture composed of Ni(OH) 2 on Co(OH) 2 displayed a redox response characterized by the presence of two peaks in the cyclic voltammograms, arising from redox reactions of the metallic species present in the layered film. These electrodes revealed a specific capacity of 762 C g -1 at the specific current of 1 A g -1 . The hybrid cell using Ni(OH) 2 on Co(OH) 2 as positive electrode and carbon nanofoam paper as negative electrode display specific energies of 101.3 W h g -1 and 37.8 W h g -1 at specific powers of 0.2 W g -1 and 2.45 W g -1 , respectively.

Novel patterning of CdS / CdTe thin film with back contacts for photovoltaic application

Science.gov (United States)

Ilango, Murugaiya Sridar; Ramasesha, Sheela K.

2018-04-01

The heterostructure of patterned CdS / CdTe thin films with back contact have been devised with electron beam lithography and fabricated using sputter deposition technique. The metallic contacts for n-CdS and p-CdTe are patterned such that both are placed at the bottom of the cell. This avoids losses due to contact shading and increases absorption in the window layer. Patterning of the device surface helps in increasing the junction area which can modulate the absorption of more number of photons due to total internal reflection. Computing the surface area between a planar and a patterned device has revealed 133% increase in the junction area. The physical and optical properties of the sputter-deposited CdS / CdTe layers are also presented. J- V characteristics of the solar cell showed the fill factor to be 25.9%, open circuit voltage to be 17 mV and short-circuit current density to be 113.68 A/m2. The increase in surface area is directly related to the increase in the short circuit current of the photovoltaic cell, which is observed from the results of simulated model in Atlas / Silvaco.

Microstructure and optical properties of nanocrystalline Cu2O thin films prepared by electrodeposition.

Science.gov (United States)

Jiang, Xishun; Zhang, Miao; Shi, Shiwei; He, Gang; Song, Xueping; Sun, Zhaoqi

2014-01-01

Cuprous oxide (Cu2O) thin films were prepared by using electrodeposition technique at different applied potentials (-0.1, -0.3, -0.5, -0.7, and -0.9 V) and were annealed in vacuum at a temperature of 100°C for 1 h. Microstructure and optical properties of these films have been investigated by X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), UV-visible (vis) spectrophotometer, and fluorescence spectrophotometer. The morphology of these films varies obviously at different applied potentials. Analyses from these characterizations have confirmed that these films are composed of regular, well-faceted, polyhedral crystallites. UV-vis absorption spectra measurements have shown apparent shift in optical band gap from 1.69 to 2.03 eV as the applied potential becomes more cathodic. The emission of FL spectra at 603 nm may be assigned as the near band-edge emission.

Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

Science.gov (United States)

Wijewarnasuriya, Priyalal S.

2016-05-01

Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

Development of MoO{sub x} thin films as back contact buffer for CdTe solar cells in substrate configuration

Energy Technology Data Exchange (ETDEWEB)

Gretener, C., E-mail: christina.gretener@empa.ch [Laboratory for Thin Films and Photovoltaics, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland); Perrenoud, J.; Kranz, L.; Baechler, C. [Laboratory for Thin Films and Photovoltaics, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland); Yoon, S. [Laboratory for Solid State Chemistry and Catalysis, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland); Romanyuk, Y.E.; Buecheler, S.; Tiwari, A.N. [Laboratory for Thin Films and Photovoltaics, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland)

2013-05-01

Molybdenum oxide compounds exhibit unique electrical and optical properties depending on oxygen vacancy concentration and composition and therefore, have recently attracted a lot of attention as a hole transport layer in various devices. In this work CdTe solar cells in substrate configuration were grown with evaporated MoO{sub x} back contact buffer layers and efficiencies of up to 10% could be achieved without using Cu in the back contact processing. The buffer layer – at the CdTe/back contact interface – in the finished cell was found to consist of MoO{sub 2} phase instead of the expected MoO{sub 3} phase as observed in as-deposited or annealed MoO{sub x} layers without CdTe deposition. In order to obtain MoO{sub x} buffer layers with desired stoichiometry, MoO{sub x} thin films were deposited by radio-frequency sputtering under different growth conditions. The chemical phase, composition, microstructure and optical properties of such layers were studied for their possible use in CdTe solar cells. - Highlights: ► MoO{sub x} is used as a back contact buffer in CdTe solar cells in substrate configuration. ► Efficiency of 10.0% was achieved without the addition of Cu. ► The back contact buffer in the finished device consists only of MoO{sub 2}. ► Phases and microstructure of MoO{sub x} can be controlled by sputtering conditions.

Effect of Electrodeposition Potential on Composition of CuIn1−xGaxSe2 Absorber Layer for Solar Cell by One-Step Electrodeposition

Directory of Open Access Journals (Sweden)

Rui-Wei You

2014-01-01

Full Text Available CIGS polycrystalline thin films were successfully fabricated by one-step cathodic electrodeposition on Mo-coated glass. In this study, we applied a galvanometry mode with three-electrode potentiostatic systems to produce a constant concentration electroplating solution, which were composed of CuCl2, InCl3, GaCl3, and SeO2. Then these as-electrodeposited films were annealed in argon atmosphere and characterized by X-ray diffraction. The results revealed that annealing treatment significantly improved the crystallinity of electrodeposited films and formed CIGS chalcopyrite structure, but at low applied deposition voltage (−950 mV versus SCE there appeared second phase. The cross-section morphology revealed that applied voltage at −1350 mV versus SCE has uniform deposition, and higher applied voltage made grain more unobvious. The deposition rate and current density are proportional to deposition potential, and hydrogen was generated apparently when applying potential beyond −1750 mV versus SCE. It was found that the CIGS compound did not match exact stoichiometry of Cu : In : Ga : Se =1 : x : 1-x : 2. This result suggests the possibility of controlling the property of thin films by varying the applied potential during electrodeposition.

Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF2 buffer layers

Science.gov (United States)

Lord, R. J.; Su, P.-Y.; Bhat, I.; Zhang, S. B.; Lu, T.-M.; Wang, G.-C.

2015-09-01

Heteroepitaxial CdTe films were grown by metal organic chemical vapor deposition on glass substrates through nanostructured Ge/CaF2 buffer layers which were biaxially oriented. It allows us to explore the structural properties of multilayer biaxial semiconductor films which possess small angle grain boundaries and to test the principle of a solar cell made of such low-cost, low-growth-temperature semiconductor films. Through the x-ray diffraction and x-ray pole figure analysis, the heteroepitaxial relationships of the mutilayered films are determined as [111] in the out-of-plane direction and CdTe//Ge//{ }{{{CaF}}2} in the in-plane direction. The I-V curves measured from an ITO/CdS/CdTe/Ge/CaF2/glass solar cell test structure shows a power conversion efficiency of ˜η = 1.26%, illustrating the initial success of such an approach. The observed non-ideal efficiency is believed to be due to a low shunt resistance and high series resistance as well as some residual large-angle grain boundary effects, leaving room for significant further improvement.

CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

Energy Technology Data Exchange (ETDEWEB)

Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

2016-08-30

Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

Influence of secondary phases during annealing on re-crystallization of CuInSe{sub 2} electrodeposited films

Energy Technology Data Exchange (ETDEWEB)

Gobeaut, A. [Laboratoire de Reactivite et Chimie des Solides, 33 rue St Leu, 80039 Amiens (France); Laffont, L., E-mail: lydia.laffont@u-picardie.f [Laboratoire de Reactivite et Chimie des Solides, 33 rue St Leu, 80039 Amiens (France); Tarascon, J.-M. [Laboratoire de Reactivite et Chimie des Solides, 33 rue St Leu, 80039 Amiens (France); Parissi, L.; Kerrec, O. [Institut de Recherche et de Developpement de l' Energie Photovoltaique, 6 quai Watier, 78401 Chatou cedex (France)

2009-06-01

Electrodeposited CuInSe{sub 2} thin films are of potential importance, as light absorber material, in the next generation of photovoltaic cells as long as we can optimize their annealing process to obtain dense and highly crystalline films. The intent of this study was to gain a basic understanding of the key experimental parameters governing the structural-textural-composition evolution of thin films as function of the annealing temperature via X-ray diffraction, scanning/transmission electron microscopy and thermal analysis measurements. The crystallization of the electrodeposited CuInSe{sub 2} films, with the presence of Se and orthorhombic Cu{sub 2} {sub -} {sub x}Se (o-Cu{sub 2} {sub -} {sub x}Se) phases, occurs over two distinct temperature ranges, between 220 {sup o}C and 250 {sup o}C and beyond 520 {sup o}C. Such domains of temperature are consistent with the melting of elemental Se and the binary CuSe phase, respectively. The CuSe phase forming during annealing results from the reaction between the two secondary species o-Cu{sub 2} {sub -} {sub x}Se and Se (o-Cu{sub 2} {sub -} {sub x}Se + Se {yields} 2 CuSe) but can be decomposed into the cubic {beta}-Cu{sub 2} {sub -} {sub x}Se phase by slowing down the heating rate. Formation of liquid CuSe beyond 520{sup o}C seems to govern both the grain size of the films and the porosity of the substrate-CuInSe{sub 2} film interface. A simple model explaining the competitive interplay between the film crystallinity and the interface porosity is proposed, aiming at an improved protocol based on temperature range, which will enable to enhance the film crystalline nature while limiting the interface porosity.

Cd-Te-In oxide thin films as possible transparent buffer layer in CdTe based solar cells

Energy Technology Data Exchange (ETDEWEB)

Castro-Rodriguez, R; Camacho, J M; Pena, J L [Applied Physics Department, CINVESTAV-IPN Merida, C.P. 97310, Merida, Yucatan (Mexico); Martel, A; Mendez-Gamboa, J, E-mail: romano@mda.cinvestav.m [Facultad de Ingenieria, Universidad Autonoma de Yucatan. AP 150 Cordemex, 97310 Merida, Yucatan (Mexico)

2009-05-01

Cd-Te-In-oxide thin films were grown by Pulsed Laser Deposition (PLD) technique using CdTe powder embedded in a matrix of indium metallic as target. The films were deposited at different oxygen pressures (P{sub o2}) from 15 to 50 mTorr at substrate temperature of 420{sup 0}C. Sheet resistance (R{sub sheet}) and transmission spectrum were measured as a function of P{sub o2}. From measurements of optical transmission, the Photonic Flux Density (PFD) spectrum were obtained and the integral of these PFD for each film were evaluated between energy range of 1.5 eV and 2.4 eV for obtain the amount of photons that can be transferred across the film in this range of solar energy spectrum. These values were evaluated over the R{sub sheet} to be used as a figure of merit. The best choice in our conditions was the films with P{sub o2} =28.5 mTorr, where the figure of merit reaches the maximum value.

Solid-state electrochemiluminescence sensor through the electrodeposition of Ru(bpy){sub 3}{sup 2+}/AuNPs/chitosan composite film onto electrode

Energy Technology Data Exchange (ETDEWEB)

Yun Wen; Xu Ying; Dong Ping; Ma Xiongxiong [Department of Chemistry, East China Normal University, ZhongShan Road North 3663, Shanghai 20062 (China); He Pingang [Department of Chemistry, East China Normal University, ZhongShan Road North 3663, Shanghai 20062 (China)], E-mail: pghe@chem.ecnu.edu.cn; Fang Yuzhi [Department of Chemistry, East China Normal University, ZhongShan Road North 3663, Shanghai 20062 (China)], E-mail: yuzhi@online.sh.cn

2009-03-02

Tris(2,2'-bipyridyl)ruthenium(II) (Ru(bpy){sub 3}{sup 2+}) has been successfully immobilized onto electrode through the electrodeposition of Ru(bpy){sub 3}{sup 2+}/AuNPs/chitosan composite film. In the experiments, chitosan solution was first mixed with Au nanoparticles (AuNPs) and Ru(bpy){sub 3}{sup 2+}. Then, during chronopotentiometry experiments in this mixed solution, a porous 3D network structured film containing Ru(bpy){sub 3}{sup 2+}, AuNPs and chitosan has been electrodeposited onto cathode due to the deposition of chitosan when pH value is over its pK{sub a} (6.3). The applied current density is crucial to the film thickness and the amount of the entrapped Ru(bpy){sub 3}{sup 2+}. Additionally, these doping Ru(bpy){sub 3}{sup 2+} in the composite film maintained their intrinsic electrochemical and electrochemiluminescence activities. Consequently, this Ru(bpy){sub 3}{sup 2+}/AuNPs/chitosan modified electrode has been used in ECL to detect tripropylamine, and the detection limit was 5 x 10{sup -10} M.

Color-sensitive photoconductivity of nanostructured ZnO/dye hybrid films prepared by one-step electrodeposition

International Nuclear Information System (INIS)

Oekermann, T.; Yoshida, T.; Tada, H.; Minoura, H.

2006-01-01

Nanostructured ZnO/dye hybrid films prepared by one-step electrodeposition have been investigated in conductivity and photoconductivity measurements in view of applications in dye-sensitized solar cells (DSSC) and in optoelectronics. Highly porous ZnO/eosin Y films, which were obtained at potentials < - 0.9 V vs. SCE, were found to have a very high conductivity already in the dark, probably because of a higher n-doping, which is due to a higher concentration of Zn atoms in the film. On the other hand, less porous or non-porous films, which were obtained at more positive potentials and in which the dye molecules are located within the ZnO crystals, were found to show a much higher sensitivity to illumination with visible light in photoconductivity measurements due to a higher absolute photoconductivity and a lower conductivity in the dark

Color-sensitive photoconductivity of nanostructured ZnO/dye hybrid films prepared by one-step electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Oekermann, T. [Gifu University, Graduate School of Engineering, Yanagido 1-1, Gifu 501-1193 (Japan) and University of Hannover, Institute of Physical Chemistry and Electrochemistry, Callinstrasse 3-3A, 30167 Hannover (Germany)]. E-mail: torsten.oekermann@pci.uni-hannover.de; Yoshida, T. [Gifu University, Graduate School of Engineering, Yanagido 1-1, Gifu 501-1193 (Japan)]. E-mail: yoshida@apchem.gifu-u.ac.jp; Tada, H. [Institute for Molecular Science, Okazaki National Research Institutes, Myodaiji, Okazaki 444-8585 (Japan); Minoura, H. [Gifu University, Graduate School of Engineering, Yanagido 1-1, Gifu 501-1193 (Japan)

2006-07-26

Nanostructured ZnO/dye hybrid films prepared by one-step electrodeposition have been investigated in conductivity and photoconductivity measurements in view of applications in dye-sensitized solar cells (DSSC) and in optoelectronics. Highly porous ZnO/eosin Y films, which were obtained at potentials < - 0.9 V vs. SCE, were found to have a very high conductivity already in the dark, probably because of a higher n-doping, which is due to a higher concentration of Zn atoms in the film. On the other hand, less porous or non-porous films, which were obtained at more positive potentials and in which the dye molecules are located within the ZnO crystals, were found to show a much higher sensitivity to illumination with visible light in photoconductivity measurements due to a higher absolute photoconductivity and a lower conductivity in the dark.

FY 1999 research and development of technologies for commercialization of photovoltaic power generation systems. Development of technologies for production of thin-film solar cells and low-cost, large-area modules (Development of technologies for high-reliability CdTe solar cell modules); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

The research and development project is implemented for production of low-cost, large-area modules of CdTe solar cells by the high-quality film-making process and high-function patterning, and the FY 1999 results are reported. The research program for the large-area TCO film-making technologies involves investigations on improvement of SnO{sub 2} film quality by the mist method and continuous film-making, which lead to continuous, stable production of 34 substrates of low resistance of 9.7{omega} on the average. The program for production of the large-area, thin-film CdS/CdTe solar cells involves production of TCO and CdS by the mist method, and patterning of the laminated TCO/CdS film by laser scribing. The CdTe film is formed by the atmospheric pressure CSS method, and treated with CdCl{sub 2} to improve its crystallinity. The CdTe film is patterned by sand blasting, and provided with the carbon and silver electrodes by screen printing, to complete the cell. The process is totally effected at the atmospheric pressure, needing no vacuum device. The CdTe solar cell assembly (130 cells connected in series, opening area: 5,413cm{sup 2}), fabricated on a trial basis, achieves a conversion efficiency of 10%. (NEDO)

Electrodeposited Structurally Stable V2O5 Inverse Opal Networks as High Performance Thin Film Lithium Batteries.

Science.gov (United States)

Armstrong, Eileen; McNulty, David; Geaney, Hugh; O'Dwyer, Colm

2015-12-09

High performance thin film lithium batteries using structurally stable electrodeposited V2O5 inverse opal (IO) networks as cathodes provide high capacity and outstanding cycling capability and also were demonstrated on transparent conducting oxide current collectors. The superior electrochemical performance of the inverse opal structures was evaluated through galvanostatic and potentiodynamic cycling, and the IO thin film battery offers increased capacity retention compared to micron-scale bulk particles from improved mechanical stability and electrical contact to stainless steel or transparent conducting current collectors from bottom-up electrodeposition growth. Li(+) is inserted into planar and IO structures at different potentials, and correlated to a preferential exposure of insertion sites of the IO network to the electrolyte. Additionally, potentiodynamic testing quantified the portion of the capacity stored as surface bound capacitive charge. Raman scattering and XRD characterization showed how the IO allows swelling into the pore volume rather than away from the current collector. V2O5 IO coin cells offer high initial capacities, but capacity fading can occur with limited electrolyte. Finally, we demonstrate that a V2O5 IO thin film battery prepared on a transparent conducting current collector with excess electrolyte exhibits high capacities (∼200 mAh g(-1)) and outstanding capacity retention and rate capability.

Easy Formation of Nanodisk-Dendritic ZnO Film via Controlled Electrodeposition Process

Directory of Open Access Journals (Sweden)

Nur Azimah Abd Samad

2015-01-01

Full Text Available A facile electrodeposition synthesis was introduced to prepare the nanodisk-dendritic ZnO film using a mixture solution of zinc chloride (ZnCl2 with potassium chloride (KCl that acted as a directing agent. This study aims to determine the best photoelectrochemical response for solar-induced water splitting. Based on our results obtained, it was found that an average diagonal of nanodisk was approximately 1.70 µm with the thickness of ≈150 nm that was successfully grown on the surface of substrate. The photocatalytic and photoelectrochemical responses of the resultant wurtzite type based-nanodisk-dendrite ZnO film as compared to the as-prepared ZnO film were monitored and evaluated. A photocurrent density of 19.87 mA/cm2 under ultraviolet rays and 14.05 mA/cm2 under visible light (500 nm was recorded for the newly developed nanodisk-dendritic ZnO thin film. It was believed that nanodisk-dendritic ZnO film can harvest more incident photons from the illumination to generate more photoinduced charge carriers to trigger the photocatalytic and photoelectrochemical reactions. Moreover, strong light scattering effects and high specific surface area of 2D nanostructures aid in the incident light absorption from any direction.

Stress control in electrodeposited CoFe films—Experimental study and analytical model

International Nuclear Information System (INIS)

Brankovic, Stanko R.; Kagajwala, Burhanuddin; George, Jinnie; Majkic, Goran; Stafford, Gery; Ruchhoeft, Paul

2012-01-01

Work investigating the effect of saccharin as an additive on growth stress and structure of electrodeposited CoFe films is presented. The saccharin concentrations were in the range between 0 g L −1 and 1.5 g L −1 . The stress measurements are performed in situ during electrodeposition of CoFe films using cantilever-bending method (curvature measurements). The structure of CoFe films was studied by transmission electron microscopy and X-ray diffraction. Results show that growth stress is a decreasing function of saccharin concentration. No appreciable change in composition, grain size, orientation or texture of CoFe films are observed with increasing saccharin content in solution. The growth stress dependence on saccharin concentration is discussed within the framework of analytical model, which directly links the observed stress decrease with the apparent saccharin coverage of the CoFe film surface during the electrodeposition process.

Impedance spectroscopy of CdTe thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Weiss, Charlotte; Heisler, Christoph; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2012-07-01

Impedance Spectroscopy (IS) is a widely used method to analyze dielectric properties of specimen as a function of frequency. Typically this characterization method delivers an equivalent circuit diagram of the device under examination to describe its electrical properties. Traditionally IS is used in coating evaluation, corrosion monitoring and in electrochemistry. During the last years the method became more important also in the field of electrical characterization of solar cells. In our work we use IS for the electrical characterization of thin film CdTe solar cells. The measurement is done at room temperature without illumination in a frequency domain from 20 Hz to 2 MHz. The samples are measured under variable forward bias. The results match insufficiently with the model of two resistor-capacitor circuits in series which is commonly used to describe the p-n junction and the blocking back contact. For better consistency, other models from the literature are used and discussed. From the results a conclusion is drawn about the properties of the solar cell such as the nature of the p-n junction or the performance of the back contact.

One, step electrodeposition of Cu(Ga,In)Se2 thin films from aqueous solution

Science.gov (United States)

Fahoume, M.; Boudraine, H.; Aggour, M.; Chraïbi, F.; Ennaoui, A.; Delplancke, J. L.

2005-03-01

Cu(In,Ga)Se{2} (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl{2}, InCl{3}, GaCl{3} and H{2}SeO{3}. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM). X-ray analysis showed the formation of CuIn{1-x}GaxSe{2} films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

A statistical approach for optimizing parameters for electrodeposition of indium (III) sulfide (In2S3) films, potential low-hazard buffer layers for photovoltaic applications

Science.gov (United States)

Mughal, Maqsood Ali

Clean and environmentally friendly technologies are centralizing industry focus towards obtaining long term solutions to many large-scale problems such as energy demand, pollution, and environmental safety. Thin film solar cell (TFSC) technology has emerged as an impressive photovoltaic (PV) technology to create clean energy from fast production lines with capabilities to reduce material usage and energy required to manufacture large area panels, hence, lowering the costs. Today, cost ($/kWh) and toxicity are the primary challenges for all PV technologies. In that respect, electrodeposited indium sulfide (In2S3) films are proposed as an alternate to hazardous cadmium sulfide (CdS) films, commonly used as buffer layers in solar cells. This dissertation focuses upon the optimization of electrodeposition parameters to synthesize In2S3 films of PV quality. The work describe herein has the potential to reduce the hazardous impact of cadmium (Cd) upon the environment, while reducing the manufacturing cost of TFSCs through efficient utilization of materials. Optimization was performed through use of a statistical approach to study the effect of varying electrodeposition parameters upon the properties of the films. A robust design method referred-to as the "Taguchi Method" helped in engineering the properties of the films, and improved the PV characteristics including optical bandgap, absorption coefficient, stoichiometry, morphology, crystalline structure, thickness, etc. Current density (also a function of deposition voltage) had the most significant impact upon the stoichiometry and morphology of In2S3 films, whereas, deposition temperature and composition of the solution had the least significant impact. The dissertation discusses the film growth mechanism and provides understanding of the regions of low quality (for example, cracks) in films. In2S3 films were systematically and quantitatively investigated by varying electrodeposition parameters including bath

Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (CdS/CdTe solar cell modules); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (CdTe taiyo denchi module seizo no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

1994-12-01

This paper reports the study results on the fabrication technology of CdS/CdTe solar cell modules in fiscal 1994. (1) On the fabrication technology for high-efficiency large-area solar cells, high-quality CdTe active layer was studied. S content taken in the active layer at sintering of CdTe decreased with an increase in formed CdTe, resulting in improvement of Voc of cells. (2) On the window layer with wide band gap, the solar cell superior in collection efficiency and photoelectric characteristics could be obtained using the newly developed mixed crystal film of Cd(1-x)Zn(x)S. (3) On the forming technology of large-area coating/sintering films, improvement of CdS film quality was studied by pressurized processing of printed CdS films. As a result, improvement of film density and light transmissivity was confirmed. (4) On the leveling process technology of CdTe films, smooth surface films were obtained by experiment using an equipment simultaneously exciting samples in all directions as one of uniform coating methods of films. 7 figs.

Effect of Electrodeposition Potential on Composition of CuIn1−xGaxSe2 Absorber Layer for Solar Cell by One-Step Electrodeposition

OpenAIRE

You, Rui-Wei; Lew, Kar-Kit; Fu, Yen-Pei

2014-01-01

CIGS polycrystalline thin films were successfully fabricated by one-step cathodic electrodeposition on Mo-coated glass. In this study, we applied a galvanometry mode with three-electrode potentiostatic systems to produce a constant concentration electroplating solution, which were composed of CuCl2, InCl3, GaCl3, and SeO2. Then these as-electrodeposited films were annealed in argon atmosphere and characterized by X-ray diffraction. The results revealed that annealing treatment significantly i...

Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

Energy Technology Data Exchange (ETDEWEB)

Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta [Panjab University, Department of Physics, Center of Advanced Study in Physics, Chandigarh (India)

2014-10-25

This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

International Nuclear Information System (INIS)

Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta

2015-01-01

This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

The effect of annealing on structural, optical and photosensitive properties of electrodeposited cadmium selenide thin films

Directory of Open Access Journals (Sweden)

Somnath Mahato

2017-06-01

Full Text Available Cadmium selenide (CdSe thin films have been deposited on indium tin oxide coated glass substrate by simple electrodeposition method. X-ray Diffraction (XRD studies identify that the as-deposited CdSe films are highly oriented to [002] direction and they belong to nanocrystalline hexagonal phase. The films are changed to polycrystalline structure after annealing in air for temperatures up to 450 °C and begin to degrade afterwards with the occurrence of oxidation and porosity. CdSe completely ceases to exist at higher annealing temperatures. CdSe films exhibit a maximum absorbance in the violet to blue-green region of an optical spectrum. The absorbance increases while the band gap decreases with increasing annealing temperature. Surface morphology also shows that the increase of the annealing temperature caused the grain growth. In addition, a number of distinct crystals is formed on top of the film surface. Electrical characteristics show that the films are photosensitive with a maximum sensitivity at 350 °C.

Landfill waste and recycling: Use of a screening-level risk assessment tool for end-of-life cadmium telluride (CdTe) thin-film photovoltaic (PV) panels

International Nuclear Information System (INIS)

Cyrs, William D.; Avens, Heather J.; Capshaw, Zachary A.; Kingsbury, Robert A.; Sahmel, Jennifer; Tvermoes, Brooke E.

2014-01-01

Grid-connected solar photovoltaic (PV) power is currently one of the fastest growing power-generation technologies in the world. While PV technologies provide the environmental benefit of zero emissions during use, the use of heavy metals in thin-film PV cells raises important health and environmental concerns regarding the end-of-life disposal of PV panels. To date, there is no published quantitative assessment of the potential human health risk due to cadmium leaching from cadmium telluride (CdTe) PV panels disposed in a landfill. Thus, we used a screening-level risk assessment tool to estimate possible human health risk associated with disposal of CdTe panels into landfills. In addition, we conducted a literature review of potential cadmium release from the recycling process in order to contrast the potential health risks from PV panel disposal in landfills to those from PV panel recycling. Based on the results of our literature review, a meaningful risk comparison cannot be performed at this time. Based on the human health risk estimates generated for PV panel disposal, our assessment indicated that landfill disposal of CdTe panels does not pose a human health hazard at current production volumes, although our results pointed to the importance of CdTe PV panel end-of-life management. - Highlights: • Analysis of possible human health risk posed by disposal of CdTe panels into landfills. • Qualitative comparison of risks associated with landfill disposal and recycling of CdTe panels. • Landfill disposal of CdTe panels does not pose a human health hazard at current production volumes. • There could be potential risks associated with recycling if not properly managed. • Factors other than concerns over toxic substances will likely drive the decisions of how to manage end-of-life PV panels

The injection spectroscopy method for the study of deep traps in CdTe films

International Nuclear Information System (INIS)

Lyubchak, V.O.; Opanasyuk, A.S.; Tirkusova, N.V.; Kharchenko, V.Yi.

1999-01-01

A simple highly informative method is presented, which enables to precisely identify the mechanism of charge transfer in the investigated structures and to extract a correct information about the parameters of local states in the energy gap band of the material via space-change-limited current-voltage characteristics. The modelling shows a good coincidence of the parameters, reconstructed with the help of this method, of the distribution of traps with the input parameters of deep traps. Some modification of the differential method are tested on high-ohm med CdTe films. Four groups of monoenergetic deep traps are found. The obtained results evidence the perspectives of the injection spectroscopy method for the research of deep traps in semiconducting and dielectric materials

High electrical conductivity in out of plane direction of electrodeposited Bi2Te3 films

Directory of Open Access Journals (Sweden)

Miguel Muñoz Rojo

2015-08-01

Full Text Available The out of plane electrical conductivity of highly anisotropic Bi2Te3 films grown via electro-deposition process was determined using four probe current-voltage measurements performed on 4.6 - 7.2 μm thickness Bi2Te3 mesa structures with 80 - 120 μm diameters sandwiched between metallic film electrodes. A three-dimensional finite element model was used to predict the electric field distribution in the measured structures and take into account the non-uniform distribution of the current in the electrodes in the vicinity of the probes. The finite-element modeling shows that significant errors could arise in the measured film electrical conductivity if simpler one-dimensional models are employed. A high electrical conductivity of (3.2 ± 0.4 ⋅ 105 S/m is reported along the out of plane direction for Bi2Te3 films highly oriented in the [1 1 0] direction.

Effect of Deposition Time on the Photoelectrochemical Properties of Cupric Oxide Thin Films Synthesized via Electrodeposition Method

Directory of Open Access Journals (Sweden)

Yaw Chong Siang

2016-01-01

Full Text Available The main aim of this study was to investigate the effect of deposition time on the physicochemical and photoelectrochemical properties of cupric oxide (CuO thin films synthesized via electrodeposition method. Firstly, the electrodeposition of amorphous CuO films on fluorine-doped tin oxide (FTO working electrodes with varying deposition time between 5 and 30 min was carried out, followed by annealing treatment at 500 °C. Resultant nanocrystalline CuO thin films were characterised using field emission-scanning electron microscopy (FE-SEM, photocurrent density, and photoluminescence measurements. Through FE-SEM analysis, it was observed that the surface of thin films was composed of irregular-sized CuO nanocrystals. A smaller CuO nanocrystals size will lead to a higher photoactivity due to the increase in overall catalytic surface area. In addition, the smaller CuO nanocrystals size will prolongs the electron-hole recombination rate due to the increase in copious amount of surface defects. From this study, it was revealed that the relationship between deposition time and CuO film thickness was non-linear. This could be due to the detachment of CuO thin films from the FTO surface at an increasing amount of CuO mass being deposited. It was observed that the amount of light absorbed by CuO thin films increased with film thickness until a certain extent whereby, any further increase in the film thickness will result in a reduction of light photon penetration. Therefore, the CuO nanocrystals size and film thickness have to be compromised in order to yield a higher catalytic surface area and a lower rate of surface charge recombination. Finally, it was found that the deposition time of 15 min resulted in an average CuO nanocrystals size of 73.7 nm, optimum film thickness of 0.73 μm, and corresponding photocurrent density of 0.23 mA/cm2 at the potential bias of - 0.3 V (versus Ag/AgCl. The PL spectra for the deposition time of 15 min has the lowest

Electrodeposited copper oxide films: Effect of bath pH on grain orientation and orientation-dependent interfacial behavior

International Nuclear Information System (INIS)

Wang, L.C.; Tacconi, N.R. de; Chenthamarakshan, C.R.; Rajeshwar, K.; Tao, M.

2007-01-01

Copper (I) oxide (Cu 2 O) films were cathodically electrodeposited on Sn-doped indium oxide substrates. The influence of electrodeposition bath pH on grain orientation and crystallite shape was carefully re-examined using X-ray diffraction and scanning electron microscopy. In addition to the (100) and (111) preferred orientations identified in two previous sets of studies, as the bath pH was varied in the present study from ∼ 7.5 to ∼ 12, a third preferred orientation, (110), was identified in a narrow pH range, ∼ 9.4 to ∼ 9.9. A remarkable shift in the flat-band potential (spanning ∼ 500 mV) was measured in a non-aqueous electrolyte medium for the various Cu 2 O samples obtained from baths of varying pH

Thin-film-based CdTe photovoltaic module characterization: measurements and energy prediction improvement.

Science.gov (United States)

Lay-Ekuakille, A; Arnesano, A; Vergallo, P

2013-01-01

Photovoltaic characterization is a topic of major interest in the field of renewable energy. Monocrystalline and polycrystalline modules are mostly used and, hence characterized since many laboratories have data of them. Conversely, cadmium telluride (CdTe), as thin-film module are, in some circumstances, difficult to be used for energy prediction. This work covers outdoor testing of photovoltaic modules, in particular that regarding CdTe ones. The scope is to obtain temperature coefficients that best predict the energy production. A First Solar (K-275) module has been used for the purposes of this research. Outdoor characterizations were performed at Department of Innovation Engineering, University of Salento, Lecce, Italy. The location of Lecce city represents a typical site in the South Italy. The module was exposed outdoor and tested under clear sky conditions as well as under cloudy sky ones. During testing, the global-inclined irradiance varied between 0 and 1500 W/m(2). About 37,000 I-V characteristics were acquired, allowing to process temperature coefficients as a function of irradiance and ambient temperature. The module was characterized by measuring the full temperature-irradiance matrix in the range from 50 to 1300 W/m(2) and from -1 to 40 W/m(2) from October 2011 to February 2012. Afterwards, the module energy output, under real conditions, was calculated with the "matrix method" of SUPSI-ISAAC and the results were compared with the five months energy output data of the same module measured with the outdoor energy yield facility in Lecce.

Structural, optical and electrical studies on pulse electrodeposited CdIn2S4 thin films

International Nuclear Information System (INIS)

Kokate, A.V.; Asabe, M.R.; Shelake, S.B.; Hankare, P.P.; Chougule, B.K.

2007-01-01

CdIn 2 S 4 thin films were prepared by pulse electrodeposition technique over F:SnO 2 glass and stainless steel substrates in galvanostatic mode from an aqueous acidic bath containing CdSO 4 , InCl 3 and Na 2 S 2 O 3 . The growth kinetics of the film has been studied and the deposition parameters such as electrolyte bath concentration, bath temperature, time of deposition, deposition current and pH of the bath are optimized. X-ray diffraction (XRD) analysis of the as deposited and annealed films shows polycrystalline nature. Energy dispersive analysis by X-ray (EDAX) confirms nearly stoichiometric CdIn 2 S 4 nature of the film. Scanning electron microscope (SEM) studies show that, the deposited films are well adherent and grains are uniformly distributed over the surface of the substrate. The optical transmission spectra show a direct band gap of 2.16 eV. Conductivity measurements have been carried out at different temperatures and electrical parameters such as activation energy, trapped energy state and barrier heights etc. have been determined

Preparation and properties of KCl-doped Cu2O thin film by electrodeposition

International Nuclear Information System (INIS)

Yu, Xiaojiao; Li, Xinming; Zheng, Gang; Wei, Yuchen; Zhang, Ama; Yao, Binghua

2013-01-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu 2 O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu 2 O crystal morphology, thus, making Cu 2 O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu 2 O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu 2 O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu 2 O thin film surface resistivity decreases from the initial 2.5 × 10 6 Ω cm to 8.5 × 10 4 Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10 2 Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

The preparation and characterization of CNx film with high nitrogen content by cathode electrodeposition

International Nuclear Information System (INIS)

Zhang, J.-T.; Cao, C.-B.; Lv Qiang; Li Chao; Zhu Hesun

2003-01-01

CN x thin film with high nitrogen content was prepared on ITO conductive glass substrates by cathode electrodeposition, using dicyandiamide (C 2 H 4 N 4 ) in acetone as precursors. The surface morphologies, atomic bonding state, and chemical composition were analyzed by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FT-IR) spectroscopy. The CN x particles got nanometer level with the average size of 80 nm. The maximum value of the N/C atomic ratio was more than 1. Carbon and nitrogen existed mainly in the form of tetrahedral C-N bonds, with a few C-N bonds. From UV-Vis absorption spectrum, we found that during near-ultraviolet area the deposited CN x films appeared nonlinear optical absorption phenomena, and the ultraviolet light (200-280 nm) could be transmitted. The electrical resistivities of the films were in the range of 10 12 -10 16 Ω cm

Preliminary results about Electrodeposition of Cobalt at laboratory level

International Nuclear Information System (INIS)

Cornejo, N.

1992-01-01

As of an organic compound, an extraction and Cobalt electrodeposition method had been developed as a part of fabrication aim of a sealed radioactive source with objective to the construction of density meter prototype. It was performed preliminary test of electrodeposition in the laboratory level in a simple cell. The used electrolyte had been a sulphate solution obtained by extraction of an organic solution. It is obtained a Co film by electrodeposition at 55 o C temperature and with an approximately Co concentration in 70 g/lt. (Author) 3 refs., 1 fig., 1 tab

Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

Energy Technology Data Exchange (ETDEWEB)

Araghi, Houshang, E-mail: araghi@aut.ac.ir [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Zabihi, Zabiholah [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Nayebi, Payman [Department of Physics, College of Technical and Engineering, Saveh Branch, Islamic Azad University, Saveh (Iran, Islamic Republic of); Ehsani, Mohammad Mahdi [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of)

2016-10-15

II–VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

Unusual strain in homoepitaxial CdTe(001) layers grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Heinke, H.; Waag, A.; Moeller, M.O.; Regnet, M.M.; Landwehr, G. [Physikalisches Institut, Univ. Wuerzburg (Germany)

1994-01-01

For homoepitaxial CdTe(001) films grown by molecular beam epitaxy onto CdTe(001) substrates, a difference between the lattice constants of the substrate and the layer was systematically observed using high resolution X-ray diffraction. Reciprocal space maps point out an unusual strain state of such layers which is indicated by the position of their reciprocal lattice points. They lie in a section of reciprocal space which is usually forbidden by elasticity theory. The strain is laterally anisotropic leading to a monoclinic symmetry of the thin films. The lateral strain is depth dependent. Possible reasons for the formation of the unusual strain are discussed, and a correlation of the unusual strain with the growth conditions is attempted

Effect of bath temperature on the properties of CuIn{sub x}Ga{sub 1-x} Se{sub 2} thin films grown by the electrodeposition technique

Energy Technology Data Exchange (ETDEWEB)

Cao Jie; Qu Shengchun; Liu Kong; Wang Zhanguo, E-mail: qsc@semi.ac.c [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2010-08-15

Electrodeposition is a promising and low cost method to synthesize CuIn{sub x} Ga{sub 1-x} Se{sub 2} (CIGS)thin films as an absorber layer for solar cells. The effect of bath temperature on the properties of CIGS thin films was investigated in this paper. CIGS films of 1 {mu}m thickness were electrodeposited potentiostatically from aqueous solution, containing trisodium citrate as a complexing agent, on Mo/glass substrate under a voltage of -0.75 V, and bath temperatures were varied from 20 to 60{sup 0}C. The effects of bath temperature on the properties of CIGS thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy. XRD revealed the presence of the CuIni{sub 0.7}Ga{sub 0.3} Se{sub 2} phase, the optimal phase for application in solar cells. The grain dimensions and crystallizability increase along with the increase of the bath temperature, and the films become stacked and homogeneous. There were few changes in surface morphology and the composition of the films. (semiconductor materials)

Influences of magnetic field on the fractal morphology in copper electrodeposition

Science.gov (United States)

Sudibyo; How, M. B.; Aziz, N.

2018-01-01

Copper magneto-electrodeposition (MED) is used decrease roughening in the copper electrodeposition process. This technology plays a vital role in electrodeposition process to synthesize metal alloy, thin film, multilayer, nanowires, multilayer nanowires, dot array and nano contacts. The effects of magnetic fields on copper electrodeposition are investigated in terms of variations in the magnetic field strength and the electrolyte concentration. Based on the experimental results, the mere presence of magnetic field would result in a compact deposit. As the magnetic field strength is increased, the deposit grows denser. The increment in concentration also leads to the increase the deposited size. The SEM image analysis showed that the magnetic field has a significant effect on the surface morphology of electrodeposits.

Preparation and characterization of electrodeposited ZnO and ZnO:Co nanorod films for heterojunction diode applications

Energy Technology Data Exchange (ETDEWEB)

Caglar, Yasemin, E-mail: yasemincaglar@anadolu.edu.tr [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey); Arslan, Andaç [Eskisehir Osmangazi University, Art and Science Faculty, Chemistry Department, Eskisehir (Turkey); Ilican, Saliha [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey); Hür, Evrim [Eskisehir Osmangazi University, Art and Science Faculty, Chemistry Department, Eskisehir (Turkey); Aksoy, Seval; Caglar, Mujdat [Anadolu University, Science Faculty, Physics Department, Eskisehir (Turkey)

2013-10-15

Highlights: •Undoped and Co-doped ZnO films were deposited on p-Si by electrodeposition method. •The effects of Co doping on some properties of ZnO films were investigated. •ZnO morphology was converted uniform multi-oriented rods with incorporation of Co. •Co-doped ZnO nanorod films showed a multi-oriented spear-like structure. -- Abstract: Well-aligned undoped and Co-doped nanorod ZnO films were grown by electrochemical deposition onto p-Si substrates from an aqueous route. Aqueous solution of Zn(NO{sub 3}){sub 2}⋅6H{sub 2}O and hexamethylenetetramine (HMT) were prepared using triple distilled water. Two different atomic ratios of Co(NO{sub 3}){sub 2}⋅6H{sub 2}O were used as a dopant element. Electrodepositions were carried out in a conventional three electrode cell for the working electrode (p-Si), reference electrode (Ag/AgCl, sat.) and counter electrode (platin wire). The effects of Co doping on the structural, morphological and electrical properties of ZnO films were investigated. X-ray diffraction (XRD) measurement showed that the undoped ZnO nanorod film was crystallized in the hexagonal wurtzite phase and presented a preferential orientation along the c-axis. Only one peak, corresponding to the (0 0 2) phase, appeared on the diffractograms. The lattice parameters and texture coefficient values were calculated. The nanorods were confirmed by the field emission scanning electron microscopy (FE-SEM) measurements. The FE-SEM image showed that the ZnO nanorods grow uniformly on the substrates, providing a surface with fairly homogeneous roughness. The surface morphology was transformed into uniform multi-oriented rods with incorporation of Co. Co-doped ZnO nanorod films showed a multi-oriented spear-like structure. The diffuse reflectance spectra of the films were measured and the optical band gap values were determined using Kubelka–Munk theory. The van der Pauw method was used to measure the sheet resistance of the films. The sheet resistance

Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

International Nuclear Information System (INIS)

El-Mongy, A.Abd; Hashem, H.M.; Ramadan, A.A.

2005-01-01

The correlation between the structural characteristics (stoichiometry and crystallite size) of CdTe films and their electronic transport properties were the aims of the present study to bring attention to the dual importance of grain size and conversion of the semiconductivity type with changing film thickness. Two main parameters were considered: the substrate temperature and film thickness. Transport properties were influenced by grain boundaries as well as by native doping. Optical measurements showed two main direct transitions at energies: E 1 ∼1.55 eV (fundamental gap) and E 2 ∼2.49 eV (due to valence band splitting). Both transitions were found to be thickness dependent with a marked change at a film thickness of about 300 nm. In the case of low substrate temperature, the scaling relation between resistivity and grain size showed a deviation from linear behavior at a size of 20 nm and the transmission coefficient is reduced. Also, the deposition on cold substrate enhanced both dark and photoconductivity for films of thickness ≥300 nm. It is also proved that the carrier transport was affected by the transmission coef-ficient for carriers to pass a single grain boundary as well as the number of grain boundaries per mean free path. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

Energy Technology Data Exchange (ETDEWEB)

El-Mongy, A.Abd; Hashem, H.M.; Ramadan, A.A. [Physics Department, Faculty of Science, Helwan University, Helwan, Cairo (Egypt)

2005-08-01

The correlation between the structural characteristics (stoichiometry and crystallite size) of CdTe films and their electronic transport properties were the aims of the present study to bring attention to the dual importance of grain size and conversion of the semiconductivity type with changing film thickness. Two main parameters were considered: the substrate temperature and film thickness. Transport properties were influenced by grain boundaries as well as by native doping. Optical measurements showed two main direct transitions at energies: E{sub 1} {approx}1.55 eV (fundamental gap) and E{sub 2}{approx}2.49 eV (due to valence band splitting). Both transitions were found to be thickness dependent with a marked change at a film thickness of about 300 nm. In the case of low substrate temperature, the scaling relation between resistivity and grain size showed a deviation from linear behavior at a size of 20 nm and the transmission coefficient is reduced. Also, the deposition on cold substrate enhanced both dark and photoconductivity for films of thickness {>=}300 nm. It is also proved that the carrier transport was affected by the transmission coef-ficient for carriers to pass a single grain boundary as well as the number of grain boundaries per mean free path. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film

Science.gov (United States)

Huang, Ruomeng; Kissling, Gabriela P.; Jolleys, Andrew; Bartlett, Philip N.; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. `Kees'

2015-11-01

We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles.

Effects of electrodeposition potential on the corrosion properties of bis-1,2-[triethoxysilyl] ethane films on aluminum alloy

International Nuclear Information System (INIS)

Hu Jiming; Liu Liang; Zhang Jianqing; Cao Chunan

2006-01-01

Bis-1,2-[triethoxysilyl] ethane (BTSE) films were prepared on 2024-T3 alloys by using potentiostatic method for corrosion protection. This work mainly investigated the effects of electrodeposition potential on the corrosion properties of silane films. Films prepared at cathodic potentials display an improvement in corrosion inhibition properties, while those prepared at anodic potentials present the deterioration of protectiveness. In the case of cathodic deposition, when the potential shifts negatively from the open-circuit potential (OCP), corrosion protection of the obtained films initially increases and then decreases, with the optimal deposition potential at -0.8 V/SCE. As indicated in scanning electron microscopy (SEM) images, films deposited at the optimum potential present the most uniform and compact morphologies. In addition, steady-state polarization and current-time curves have been also recorded on Al alloys in BTSE solutions during the deposition, respectively

Preparation of uranium electrodeposited target in aqueous system

International Nuclear Information System (INIS)

Chen Qiping; Li Yougen; Zhong Wenbin

2006-03-01

The main factors affecting uranium electrodeposition were tested and discussed. In the primary experiment about preparation of uranium isotopic target by electrodeposition, a stainless steel disk has been chosen as the target material, the electrolytic bath is comprised of UO 2 (NO 3 ) 2 and (NH 4 ) 2 C 2 O 4 , which has been adjusted to a pH of 2-3. Composition of the lost electrolytic bath was analysed by spectrophotometer. The thickness of resulting film is about 8-10 mg/cm 2 , the target having a thin, continuous, uniform layer of uranium, and its electrodeposited rate is more than 80%. (authors)

Electrochemical and surface characterisation of oxide films on nano-grain nickel films electrodeposited on INCOLOY-800

International Nuclear Information System (INIS)

Navin Vinayak, S.; Sunitha, Y.; Rangarajan, S.; Narasimhan, S.V.

2008-01-01

Nano materials have different properties from the corresponding bulk materials because of fine grain size, large fraction of surface atoms, high surface energy and high grain boundary volume fraction. For similar reasons, the nano-alloy coatings show superior high-temperature corrosion resistance and are generally more resistant to stress corrosion cracking. Hence, it is of interest to know the materials performance, if the structural materials used in nuclear reactors are made of nano-grains. In Indian PHWRs, Incoloy-800 is being used as the steam generator tubing material. It's corrosion resistance property is very important as it forms not only the pressure boundary between the radioactive primary water and non-active secondary water but also from the view point of loss of heavy water, in case of any corrosion damage. In this paper, the corrosion resistance of the oxide films formed on nano-grain nickel film electrodeposited on Incoloy-800 (a) in the presence of saccharine (WS) and (b) in the absence of saccharine (WOS) were compared with that formed on Commercial Ni foil, using electrochemical dc polarization and ac impedance techniques. The surface morphology, elemental analysis and grain size were studied with SEM, EDX and XRD techniques respectively. The nano-grain nickel films were prepared on Incoloy-800 by electrodeposition using Watt's Bath with saccharine sodium as a surfactant. The oxide films were developed by exposing them to LiOH solution (pH-10.0) at 245 deg C for 3 days (A-group) and 7 days (B-group). XRD results showed that the grain size of Ni formed in the absence of saccharine (WOS) was ∼ 60 nm and did not change after being autoclaved. But, for Ni formed in the presence of saccharine (WS), the grain size was ∼ 16 nm which increased to 40-50 nm after being autoclaved. With both A and B-group specimens, the PDAP curves showed an active-passive transition, a passive region and a transpassive region in 2N H 2 SO 4 . However, the critical

Growth and characterisation of potentiostatically electrodeposited Cu2O and Cu thin films

International Nuclear Information System (INIS)

Wijesundera, R.P.; Hidaka, M.; Koga, K.; Sakai, M.; Siripala, W.

2006-01-01

Cuprous oxide and copper thin films were potentiostatically electrodeposited in an acetate bath. Voltammetric curves were used to investigate the growth parameters; deposition potential, pH and temperature of the bath. Deposition potential dependency on the structural, morphological, optical and electronic properties of the films were investigated by the X-ray diffraction measurements, scanning electron micrographs, absorption measurements and dark and light current-voltage characterisations. It was observed that single phase polycrystalline Cu 2 O can be deposited from 0 to - 300 mV Vs saturated calomel electrode (SCE) and co-deposition of Cu and Cu 2 O starts at - 400 mV Vs SCE. Further increase in deposition potential from - 700 mV Vs SCE produces single phase Cu thin films. Single phase polycrystalline Cu 2 O thin films with cubic grains of 1-2 μm can be possible within the very narrow potential domain around - 200 mV Vs SCE. Enhanced photoresponse in a photoelectrochemical cell is produced by the Cu 2 O thin film prepared at - 400 mV Vs SCE, where Cu is co-deposited with Cu 2 O with random distribution of Cu spheres on the Cu 2 O surface. This study reveals that a single deposition bath can be used to deposit both Cu and Cu 2 O separately and an admixture of Cu-Cu 2 O by controlling the deposition parameters

Effect of annealing temperature on the PEC performance of electrodeposited copper oxides

Science.gov (United States)

Marathey, Priyanka; Pati, Ranjan; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

In this work, we have deposited Cu2O film on fluorine doped tin oxide (FTO) substrate by electrodeposition. Pure CuO phase has been obtained by annealing the electrodeposited Cu2O film at optimized temperature (500°C) for two hours in air. Copper(I) oxide films showed good photo response with a current density of 0.54mA/cm2 at 0 V vs RHE. It is evident from UV-Visible spectroscopic analysis that the bandgap of Cu(I) and Cu(II) oxides differs from each other resulting in significant change in photo current for these two phases, observed in the PEC study. However CuO film showed better stability as compared to Cu2O film.

Synthesis and tribological behaviors of diamond-like carbon films by electrodeposition from solution of acetonitrile and water

International Nuclear Information System (INIS)

Zhang Jisheng; Huang Lina; Yu Laigui; Zhang Pingyu

2008-01-01

Diamond-like carbon (DLC) films were prepared on silicon substrates by liquid phase electrodeposition from a mixture of acetonitrile and deionized water. The deposition voltage was clearly reduced owing to the presence of deionized water in the electrolyte by changing the basic properties (dielectric constant and dipole moment) of the electrolyte. Raman spectra reveal that the ratio of sp 3 /sp 2 in the DLC films is related to the concentration of acetonitrile. The surface roughness and grain morphology determined by atomic force microscopy are also influenced by the concentration of the acetonitrile. The UMT-2 universal micro-tribometer was used to test the friction properties of the DLC films obtained from electrolytes with different concentration. The results convey that the DLC film prepared from the electrolyte containing 10 vol.% acetonitrile has the better surface morphology and friction behavior comparing with the other. In addition the growth mechanism of the film was also discussed

Functionalization of super-aligned carbon nanotube film using hydrogen peroxide solution and its application in copper electrodeposition.

Science.gov (United States)

Xiong, Lunqiao; Shuai, Jing; Hou, Zecheng; Zhu, Lin; Li, Wenzhen

2017-07-15

In order to make super-aligned carbon nanotubes (SACNT) homogeneously spread in electrolytes, a swift and effective method was devised for surface functionalization of SACNT film by ohmic heating using hydrogen peroxide solution. Controllable generation of defects and notable graft of oxygen functional groups on the sidewall of SACNTs were induced as proven by X-ray photoelectron spectroscopy and Raman spectroscopy. Differently from the harsh wet chemical oxidation, the super-aligned morphology and structural integrity of carbon nanotubes in the SACNT film were found to be well preserved by electron microscopy analysis. The functionalized treatment can remove extraneous material contaminating SACNT film and improve its conductivity. The grafting of polar ionizable groups has been proved to effectively eliminate the agglomeration of SACNTs. When the oxidized SACNT film was used as host material for electrodeposition of copper, the composite film of well-bonded SACNTs and Cu was successfully prepared. Copyright © 2017 Elsevier Inc. All rights reserved.

Preparation and characterization of electrodeposited SnS:In thin films: Effect of In dopant

Science.gov (United States)

Kafashan, Hosein; Balak, Zohre

2017-09-01

SnS:In thin films were grown on fluorine doped tin oxide (FTO) substrate by cathodic electrodeposition technique. The solution was containing 2 mM SnCl2 and 16 mM Na2S2O3 and different amounts of 1 mM InCl3 as In-dopant. The pH, bath temperature, deposition time, and deposition potential (E) were fixed at 2.1, 60 °C, 30 min, and - 1 V, respectively. The XRD results showed that the synthesized films were polycrystalline orthorhombic SnS. The XPS results demonstrated that the films were composed of Sn, S and In. According to the FESEM images, an increase in In-dopant concentration leads to a change in morphology from grain-like to sheet-like having a nanoscale thickness of 20-80 nm and fiber-like. The PL spectra of undoped SnS exhibited four emission peaks including a UV peak, two blue emission peaks, and an IR emission peak. According to the UV-Vis spectra, the direct band gap of SnS:In thin films was estimated to be 1.40-1.66 eV.

Numerical dataset for analyzing the performance of a highly efficient ultrathin film CdTe solar cell

Directory of Open Access Journals (Sweden)

Rucksana Safa Sultana

2017-06-01

Full Text Available The article comprises numerical data of distinct semiconductor materials applied in the sketch of a CdTe absorber based ultrathin film solar cell. Additionally, the contact layer parametric values of the cell have been described also. Therefore, the simulation has been conducted with data related to the hetero-structured (n-ZnO/n-CdS/p-CdTe/p-ZnTe semiconductor device and a J–V characteristics curve was obtained. The operating conditions have also been recorded. Afterward, the solar cell performance parameters such as open circuit voltage (Voc, short circuit current density (Jsc, fill factor (FF, and efficiency (η have been investigated and compared with reference cell.

Variation of magnetoimpedance of electrodeposited NiFe/Cu with deposition current density

Science.gov (United States)

Mishra, A. C.; Jha, A. K.

2017-12-01

An investigation about influence of deposition current density on electrodeposited magnetic film is reported in this paper. Ferromagnetic NiFe thin films were electrodeposited on copper wires of 100 μm diameter for various electrdepostion current densities ranging from 10 to 60 mA/cm2 maintaining equal thickness in all films. The composition of deposited film varied with deposition current density and in particular, a composition of Ni79Fe21 was achieved for a current density of 20 mA/cm2. The surface microstructure of the film deposited at the current density of 20 mA/cm2 was found to have excellent smoothness. The coercivity of the film was lowest and highest value of magnetoimpedance was measured for this film. The influence of current density on film composition and hence magnetic properties was attributed to the change of deposition mechanism.

Electrodeposition synthesis and electrochemical properties of nanostructured γ-MnO 2 films

Science.gov (United States)

Chou, Shulei; Cheng, Fangyi; Chen, Jun

The thin films of carambola-like γ-MnO 2 nanoflakes with about 20 nm in thickness and at least 200 nm in width were prepared on nickel sheets by combination of potentiostatic and cyclic voltammetric electrodeposition techniques. The as-prepared MnO 2 nanomaterials, which were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), were used as the active material of the positive electrode for primary alkaline Zn/MnO 2 batteries and electrochemical supercapacitors. Electrochemical measurements showed that the MnO 2 nanoflake films displayed high potential plateau (around 1.0 V versus Zn) in primary Zn/MnO 2 batteries at the discharge current density of 500 mA g -1 and high specific capacitance of 240 F g -1 at the current density of 1 mA cm -2. This indicated the potential application of carambola-like γ-MnO 2 nanoflakes in high-power batteries and electrochemical supercapacitors. The growth process for the one- and three-dimensional nanostructured MnO 2 was discussed on the basis of potentiostatic and cyclic voltammetric techniques. The present synthesis method can be extended to the preparation of other nanostructured metal-oxide films.

Preparation and properties of KCl-doped Cu{sub 2}O thin film by electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Yu, Xiaojiao, E-mail: yxjw@xaut.edu.cn [Xi’an University of Technology, Xi’an 710048 (China); Li, Xinming [Xi’an University of Technology, Xi’an 710048 (China); Zheng, Gang [Xi’an University of Technology, Xi’an 710048 (China); Northwestern Polytechnical University, Xi’an 710072 (China); Wei, Yuchen [The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China); Zhang, Ama; Yao, Binghua [Xi’an University of Technology, Xi’an 710048 (China)

2013-04-01

With the indium tin oxide-coated glass as working electrode, cuprous oxide thin film is fabricated by means of electrodeposition. The effects of KCl doped and annealing treatment upon Cu{sub 2}O thin film morphology, surface resistivity, open-circuit voltage, electric conduction types and visible light response are studied. The research results indicate that KCl doped has a great effect upon Cu{sub 2}O crystal morphology, thus, making Cu{sub 2}O thin film surface resistivity drop, and the open-circuit voltage increase and that electric conduction types are transformed from p type into n type, and the visible light (400–500 nm) absorption rate is slightly reduced. Annealing treatment can obviously decrease Cu{sub 2}O thin film surface resistivity and improve its open-circuit voltage. When KCl concentration in electrolytic solution reaches 7 mmol/L, Cu{sub 2}O thin film morphology can be changed from the dendritic crystal into the cubic crystal and Cu{sub 2}O thin film surface resistivity decreases from the initial 2.5 × 10{sup 6} Ω cm to 8.5 × 10{sup 4} Ω cm. After annealing treatment at 320 °C for 30 min, the surface resistivity decreases to 8.5 × 10{sup 2} Ω cm, and the open-circuit voltage increases from the initial 3.1 mV to 79.2 mV.

Preparation of uranium electrodeposited target in aqueous system

Energy Technology Data Exchange (ETDEWEB)

Qiping, Chen; Yougen, Li; Wenbin, Zhong [China Academy of Engineering Physics, Mianyang (China). Inst. of Nuclear Physics and Chemistry

2006-03-15

The main factors affecting uranium electrodeposition were tested and discussed. In the primary experiment about preparation of uranium isotopic target by electrodeposition, a stainless steel disk has been chosen as the target material, the electrolytic bath is comprised of UO{sub 2}(NO{sub 3}){sub 2} and (NH{sub 4}){sub 2}C{sub 2}O{sub 4}, which has been adjusted to a pH of 2-3. Composition of the lost electrolytic bath was analysed by spectrophotometer. The thickness of resulting film is about 8-10 mg/cm{sup 2}, the target having a thin, continuous, uniform layer of uranium, and its electrodeposited rate is more than 80%. (authors)

Effect of methanol ratio in mixed solvents on optical properties and wettability of ZnO films by cathodic electrodeposition

International Nuclear Information System (INIS)

Zhang, Miao; Xu, Kai; Jiang, Xishun; Yang, Lei; He, Gang; Song, Xueping; Sun, Zhaoqi; Lv, Jianguo

2014-01-01

Highlights: • Different surface morphologies of ZnO films were prepared by cathodic electrodeposition. • The surface morphologies are controlled through add different ratio methanol to electrolyte. • The morphology changes from nanorods with hexagonal structure to net-like nanostructure. • The wettability of films shows obvious change with increasing methanol ratio. • The maximum light-induced CA change has been observed with the methanol ratio of 0.8. - Abstract: ZnO thin films were prepared in the electrolyte with different methanol ratio by cathodic electrodeposition method. Microstructure, surface morphology, optical properties and wettability of the thin films were investigated by X-ray diffractometer, field-emission scanning electron microscope, ultraviolet–visible spectroscope, fluorescence spectrometer and water contact angle apparatus. Increase of methanol ratio in the solvents may restrain the (0 0 2) plane preferential orientation in some extent. Change of current density curves with the ratio of methanol in the solution play a vital role on electrochemical reaction kinetics, microstructure and/or surface morphology of ZnO thin films. With the methanol ratio increase from 0 to 0.8, the surface morphology changes from nanorods to net-like nanostructure. The adsorbed NO 3 − ions on the polar planes hinder the crystal growth along the c-axis and redirect the growth direction along the nonpolar planes. The maximum and minimum band gaps have been obtained in the ZnO thin films with the methanol ratio of 0.4 and 0.6, respectively. Change of contact angle before UV irradiation may be related to surface morphology and oxygen vacancies. The maximum light-induced water contact angle change has been observed in the sample with the methanol ratio of 0.8. The results may be attributed to the higher surface roughness and net-like morphology

Effect of methanol ratio in mixed solvents on optical properties and wettability of ZnO films by cathodic electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Zhang, Miao; Xu, Kai; Jiang, Xishun; Yang, Lei; He, Gang; Song, Xueping [School of Physics and Material Science, Anhui University, Hefei 230601 (China); Sun, Zhaoqi, E-mail: szq@ahu.edu.cn [School of Physics and Material Science, Anhui University, Hefei 230601 (China); Lv, Jianguo, E-mail: lvjg1@163.com [School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601 (China)

2014-12-05

Highlights: • Different surface morphologies of ZnO films were prepared by cathodic electrodeposition. • The surface morphologies are controlled through add different ratio methanol to electrolyte. • The morphology changes from nanorods with hexagonal structure to net-like nanostructure. • The wettability of films shows obvious change with increasing methanol ratio. • The maximum light-induced CA change has been observed with the methanol ratio of 0.8. - Abstract: ZnO thin films were prepared in the electrolyte with different methanol ratio by cathodic electrodeposition method. Microstructure, surface morphology, optical properties and wettability of the thin films were investigated by X-ray diffractometer, field-emission scanning electron microscope, ultraviolet–visible spectroscope, fluorescence spectrometer and water contact angle apparatus. Increase of methanol ratio in the solvents may restrain the (0 0 2) plane preferential orientation in some extent. Change of current density curves with the ratio of methanol in the solution play a vital role on electrochemical reaction kinetics, microstructure and/or surface morphology of ZnO thin films. With the methanol ratio increase from 0 to 0.8, the surface morphology changes from nanorods to net-like nanostructure. The adsorbed NO{sub 3}{sup −} ions on the polar planes hinder the crystal growth along the c-axis and redirect the growth direction along the nonpolar planes. The maximum and minimum band gaps have been obtained in the ZnO thin films with the methanol ratio of 0.4 and 0.6, respectively. Change of contact angle before UV irradiation may be related to surface morphology and oxygen vacancies. The maximum light-induced water contact angle change has been observed in the sample with the methanol ratio of 0.8. The results may be attributed to the higher surface roughness and net-like morphology.

Investigation of the chlorine A-Center in polycrystalline CdTe layers by photoluminescence spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Kraft, Christian; Metzner, Heiner; Haedrich, Mathias [Institut fuer Festkoerperphysik, Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Schley, Pascal [Institut fuer Physik, Technische Universitaet Ilmenau, 98684 Ilmenau (Germany); Goldhahn, Ruediger [Institut fuer Experimentelle Physik, Universitaet Magdeburg, 39016 Magdeburg (Germany)

2012-07-01

Polycrystalline CdTe is a well known absorber material for thin film solar cells. However, the improvement of CdTe-based solar cells for industrial application is mainly based on empirical enhancements of certain process steps which are not concerning the absorber itself. Hence, the defect structure of CdTe is still not understood in detail. One of the most discussed defects in CdTe is the so called chlorine A-center. In general, the A-Center describes a defect complex of the intrinsic cadmium vacancy defect and an extrinsic impurity. By means of photoluminescence spectroscopy at temperatures of 5 K we investigated the behavior of the chlorine A-center under different CdTe activation techniques. Therefore, we were able to determine the electronic level of that defect and to analyze its influence on the crystal quality and the functionality of solar cells that were prepared of the corresponding samples.

CDTE alloys and their application for increasing solar cell performance

Science.gov (United States)

Swanson, Drew E.

Cadmium Telluride (CdTe) thin film solar is the largest manufactured solar cell technology in the United States and is responsible for one of the lowest costs of utility scale solar electricity at a purchase agreement of $0.0387/kWh. However, this cost could be further reduced by increasing the cell efficiency. To bridge the gap between the high efficiency technology and low cost manufacturing, a research and development tool and process was built and tested. This fully automated single vacuum PV manufacturing tool utilizes multiple inline close space sublimation (CSS) sources with automated substrate control. This maintains the proven scalability of the CSS technology and CSS source design but with the added versatility of independent substrate motion. This combination of a scalable deposition technology with increased cell fabrication flexibility has allowed for high efficiency cells to be manufactured and studied. The record efficiency of CdTe solar cells is lower than fundamental limitations due to a significant deficit in voltage. It has been modeled that there are two potential methods of decreasing this voltage deficiency. The first method is the incorporation of a high band gap film at the back contact to induce a conduction-band barrier that can reduce recombination by reflecting electrons from the back surface. The addition of a Cd1-x MgxTe (CMT) layer at the back of a CdTe solar cell should induce this desired offset and reflect both photoelectrons and forward-current electrons away from the rear surface. Higher collection of photoelectrons will increase the cells current and the reduction of forward current will increase the cells voltage. To have the optimal effect, CdTe must have reasonable carrier lifetimes and be fully depleted. To achieve this experimentally, CdTe layers have been grown sufficiently thin to help produce a fully depleted cell. A variety of measurements including performance curves, transmission electron microscopy, x

Ionic electrodeposition of II-VI and III-V compounds. III. Computer simulation of quasi-rest potentials for M/sub 1/X/sub 1/ compounds analogous to CdTe

International Nuclear Information System (INIS)

Engelken, R.D.

1987-01-01

The quasi-rest potential (QRP) has been proposed as a key quantity in characterizing compound semiconductor (e.g. CdTe) electrodeposition. This article expands the modeling/simulation representative of Cd/sub x/Te in chemical equilibrium to calculate two ''QRP's'': E/sub M/1/sub /, the mixed potential occurring immediately after current interruption and before any relaxation in double layer ion concentration and significant ion exchange/surface stoichiometry change occur, and E/sub M/2/sub /, another mixed potential occurring after the double layer ion concentrations have relaxed to their bulk values but still before any significant surface composition change occurs. Significant predictions include existence of a dramatic negative transition in QRP, with negative-going deposition potential, centered on the potential of perfect stoichiometry (PPS), inequality, in general, between the PPS and E/sub M/1/sub / unless the deposit remains in equilibrium with the electrolyte (no ion exchange at open circuit), negligible sensitivity of QRP-E curves to the activity coefficient parameter implying the importance of the PPS in characterizing compound deposition, and disappearance of the transition structure for sufficiently positive Gibbs free energies

Quantitative texture analysis of electrodeposited line patterns

DEFF Research Database (Denmark)

Pantleon, Karen; Somers, Marcel A.J.

2005-01-01

Free-standing line patterns of Cu and Ni were manufactured by electrochemical deposition into lithographically prepared patterns. Electrodeposition was carried out on top of a highly oriented Au-layer physically vapor deposited on glass. Quantitative texture analysis carried out by means of x......-ray diffraction for both the substrate layer and the electrodeposits yielded experimental evidence for epitaxy between Cu and Au. An orientation relation between film and substrate was discussed with respect to various concepts of epitaxy. While the conventional mode of epitaxy fails for the Cu...

Cathodic electrodeposition of amorphous elemental selenium from an air- and water-stable ionic liquid.

Science.gov (United States)

Redman, Daniel W; Murugesan, Sankaran; Stevenson, Keith J

2014-01-14

Electrodeposition of selenium from 1-propyl-1-methylpiperidinium bis(trifluoromethylsulfonyl)imide is reported. In situ UV-vis spectroelectrochemistry was used to investigate the reduction of diethyl selenite to form elemental selenium thin films from an ionic liquid-acetonitrile medium. Three reduction peaks of diethyl selenite were observed via cyclic voltammetry and are attributed to the stepwise reduction of the selenium precursor adsorbed on the electrode. The electrodeposition mechanism is influenced by both potential and time. Electrodeposition at -1.7 V vs Pt QRE resulted in the deposition of elemental selenium nanoparticles that with time coalesced to form a continuous film. At reduction potentials more negative than -1.7 V the morphology of the deposit changed significantly due to the reduction of elemental Se to Se(2-). In addition, p-type photoconductivity of the films was observed during the spectroelectrochemical measurements. X-ray diffraction and Raman spectroscopy confirmed that the deposited selenium films were amorphous. X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy confirm the films consisted of pure selenium with minor residual contamination from the precursor and ionic liquid.

A low-cost non-toxic post-growth activation step for CdTe solar cells

Science.gov (United States)

Major, J. D.; Treharne, R. E.; Phillips, L. J.; Durose, K.

2014-07-01

Cadmium telluride, CdTe, is now firmly established as the basis for the market-leading thin-film solar-cell technology. With laboratory efficiencies approaching 20 per cent, the research and development targets for CdTe are to reduce the cost of power generation further to less than half a US dollar per watt (ref. 2) and to minimize the environmental impact. A central part of the manufacturing process involves doping the polycrystalline thin-film CdTe with CdCl2. This acts to form the photovoltaic junction at the CdTe/CdS interface and to passivate the grain boundaries, making it essential in achieving high device efficiencies. However, although such doping has been almost ubiquitous since the development of this processing route over 25 years ago, CdCl2 has two severe disadvantages; it is both expensive (about 30 cents per gram) and a water-soluble source of toxic cadmium ions, presenting a risk to both operators and the environment during manufacture. Here we demonstrate that solar cells prepared using MgCl2, which is non-toxic and costs less than a cent per gram, have efficiencies (around 13%) identical to those of a CdCl2-processed control group. They have similar hole densities in the active layer (9 × 1014 cm-3) and comparable impurity profiles for Cl and O, these elements being important p-type dopants for CdTe thin films. Contrary to expectation, CdCl2-processed and MgCl2-processed solar cells contain similar concentrations of Mg; this is because of Mg out-diffusion from the soda-lime glass substrates and is not disadvantageous to device performance. However, treatment with other low-cost chlorides such as NaCl, KCl and MnCl2 leads to the introduction of electrically active impurities that do compromise device performance. Our results demonstrate that CdCl2 may simply be replaced directly with MgCl2 in the existing fabrication process, thus both minimizing the environmental risk and reducing the cost of CdTe solar-cell production.

Achievement report for fiscal 1997 on development of technologies for practical photovoltaic system under New Sunshine Program. Manufacture of thin-film solar cell and of low-cost/large-area module (Manufacture of high-reliability CdTe solar module); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu, tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

The target is a low-cost CdS/CdTe solar cell of a large area (60cm times 90cm), the establishment of mass-production technologies for the cell, and the enhancement of production efficiency. A thin film formation technology of subjecting CdS film organic metal to pyrolysis is established, which reduces photoabsorption loss in the shortwave domain of wavelength of not longer than 500nm, reduces reflection loss in the film, and improves on short-circuit current density. Improvement is also achieved on CdTe film quality and junction quality by use of a proximity sublimation method in a vacuum, when a conversion rate of 16.0% (1cm{sup 2}) is attained which is the highest in the world. Based on the results of the above-said efforts, a 3.3mm-thick glass substrate is employed for CdTe film to develop into a 30cm times 60cm-large size, with the film thereon uniformly thick over a large area thanks to a normal pressure proximity sublimation method. Studies are made toward a process nearer to the ultimate product and, using the patterning technique, a 30cm times 60cm-large CdTe solar cell is tentatively built realizing a conversion rate of 9.8%. (NEDO)

Preparation of CuGaSe2 absorber layers for thin film solar cells by annealing of efficiently electrodeposited Cu-Ga precursor layers from ionic liquids

International Nuclear Information System (INIS)

Steichen, M.; Larsen, J.; Guetay, L.; Siebentritt, S.; Dale, P.J.

2011-01-01

CuGaSe 2 absorber layers were prepared on molybdenum substrates by electrochemical codeposition of copper and gallium and subsequential annealing in selenium vapour. The electrodeposition was made from a deep eutectic based ionic liquid consisting of choline chloride/urea (Reline) with a plating efficiency of over 85%. The precursor film composition is controlled by the ratio of the copper to gallium fluxes under hydrodynamic conditions and by the applied deposition potential. X-ray diffraction reveals CuGa 2 alloying during the electrodeposition and CuGaSe 2 formation after annealing. Photoluminescence (PL) and photocurrent spectroscopy revealed the good opto-electronic properties of the CuGaSe 2 absorber films. The absorber layers have been converted to full devices with the best device achieving 4.0 % solar conversion efficiency.

Effects of melt-temperature on limiting current density in Al electrodeposition and morphology of Al electrodeposits obtained from ambient temperature type molten salt; Joongata yoyuen kara no denki aluminium mekki no genkai denryu mitsudo oyobi denseki keitai ni oyobosu mekki ekion no eikyo

Energy Technology Data Exchange (ETDEWEB)

Shimizu, T.; Tatano, M.; Uchida, Y. [Nisshin Steel Co. Ltd., Tokyo (Japan)

1996-03-31

Some of more important electrolytic solutions for Al electrodeposition are organic solvents, high-temperature type molten salts and low-temperature type molten salts having a melting point of 30{degree}C or lower, such as ethylmethylimidazolium chloride (EMIC). This study uses a molten salt of AlCl3-EMIC as the low-temperature type solution for high-speed electrodeposition. Discussed herein are the effects of melt temperature on limiting current density in Al electrodeposition and Al electrodeposit morphology. Limiting current density increases as melt temperature increases at any AlCl3 concentration used in this study. The AlCl3 concentration that gives the maximum limiting current density shifts from 64 to 67mol% at a melt temperature of 120{degree}C. A dense, smooth Al electrodeposited film results at a melt temperature of 100{degree}C or lower, but the electrodeposited grains become coarser as melt temperature increases. Melt temperature can be increased to 140{degree}C to secure a smooth electrodeposited film, showing possibility of 2 times faster electrodeposition than the conventional one. 21 refs., 12 figs., 1 tab.

Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application

International Nuclear Information System (INIS)

Luo Xinze; Xu Lin; Xu Bingbing; Li Fengyan

2011-01-01

Hybrid film of zinc oxide (ZnO) and tetrasulfonated copper phthalocyanine (TSPcCu) was grown on an indium tin oxide (ITO) glass by one-step cathodic electrodeposition from aqueous mixtures of Zn(NO 3 ) 2 , TSPcCu and KCl. The addition of TSPcCu strongly influences the morphology and crystallographic orientation of the ZnO. The nanosheets stack of ZnO leads to a porous surface structure which is advantageous to further adsorb organic dyes. The photovoltaic properties were investigated by assembling the DSSC device based on both the only ZnO film and the ZnO/TSPcCu hybrid films. Photoelectrochemical analysis revealed that the optimized DSSC device with TSPcCu represented a more than three-fold improvement in power conversion efficiency than the device without TSPcCu. The DSSC based on ZnO/TSPcCu hybrid films demonstrates an open circuit voltage of 0.308 V, a short circuit current of 90 μA cm -2 , a fill factor of 0.26, and a power conversion efficiency of 0.14%.

Electrodeposition of zinc oxide/tetrasulfonated copper phthalocyanine hybrid thin film for dye-sensitized solar cell application

Energy Technology Data Exchange (ETDEWEB)

Luo Xinze [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China); College of Chemistry and Biological Science, Yili Normal University, Yining 835000, (China); Xu Lin, E-mail: linxu@nenu.edu.cn [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China); Xu Bingbing; Li Fengyan [Key Laboratory of Polyoxometalates Science of Ministry of Education, College of Chemistry, Northeast Normal University, Changchun 130024 (China)

2011-05-15

Hybrid film of zinc oxide (ZnO) and tetrasulfonated copper phthalocyanine (TSPcCu) was grown on an indium tin oxide (ITO) glass by one-step cathodic electrodeposition from aqueous mixtures of Zn(NO{sub 3}){sub 2}, TSPcCu and KCl. The addition of TSPcCu strongly influences the morphology and crystallographic orientation of the ZnO. The nanosheets stack of ZnO leads to a porous surface structure which is advantageous to further adsorb organic dyes. The photovoltaic properties were investigated by assembling the DSSC device based on both the only ZnO film and the ZnO/TSPcCu hybrid films. Photoelectrochemical analysis revealed that the optimized DSSC device with TSPcCu represented a more than three-fold improvement in power conversion efficiency than the device without TSPcCu. The DSSC based on ZnO/TSPcCu hybrid films demonstrates an open circuit voltage of 0.308 V, a short circuit current of 90 {mu}A cm{sup -2}, a fill factor of 0.26, and a power conversion efficiency of 0.14%.

Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications

Energy Technology Data Exchange (ETDEWEB)

Smith, L.; Murphy, J.W. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Kim, J. [Korean Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Rozhdestvenskyy, S.; Mejia, I. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Park, H. [Korean Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Allee, D.R. [Flexible Display Center, Arizona State University, Phoenix, AZ 85284 (United States); Quevedo-Lopez, M. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Gnade, B., E-mail: beg031000@utdallas.edu [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States)

2016-12-01

Solid-state neutron detectors offer an alternative to {sup 3}He based detectors, but suffer from limited neutron efficiencies that make their use in security applications impractical. Solid-state neutron detectors based on single crystal silicon also have relatively high gamma-ray efficiencies that lead to false positives. Thin film polycrystalline CdTe based detectors require less complex processing with significantly lower gamma-ray efficiencies. Advanced geometries can also be implemented to achieve high thermal neutron efficiencies competitive with silicon based technology. This study evaluates these strategies by simulation and experimentation and demonstrates an approach to achieve >10% intrinsic efficiency with <10{sup −6} gamma-ray efficiency.

Pulse-reverse electrodeposition for mesoporous metal films: combination of hydrogen evolution assisted deposition and electrochemical dealloying.

Science.gov (United States)

Cherevko, Serhiy; Kulyk, Nadiia; Chung, Chan-Hwa

2012-01-21

Hydrogen evolution assisted electrodeposition is a new bottom-up technique allowing the fast and simple synthesis of nanometals. Electrochemical dealloying is a top-down approach with the same purpose. In this work, we show that a combination of these two methods in sequence by pulse-reverse electrodeposition can be used to prepare high-surface-area nanostructured metals. Highly porous adherent platinum is obtained by the deposition of CuPt alloy during the cathodic cycles and the selective dissolution of copper during the anodic cycles. The convection created by the movement of the hydrogen bubbles increases the deposition rate and removes the dissolved copper ions from the diffusion layer, which ensures the deposition of a film with the same stoichiometry throughout the whole process. Due to the relatively high ratio of copper atoms on the surface in the as-deposited layer, it is proposed that the dealloying kinetics is significantly higher than that usually observed during the dealloying process in a model system. The proposed approach has several advantages over other methods, such as a very high growth rate and needlessness of any post-treatment processes. A detailed analysis of the effect of pulse-reverse waveform parameters on the properties of the films is presented. Mesoporous platinum with pores and ligaments having characteristic sizes of less than 10 nm, an equivalent surface area of up to ca. 220 m(2) cm(-3), and a roughness factor of more than 1000 is fabricated.

How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

Energy Technology Data Exchange (ETDEWEB)

Klie, Robert [Univ. of Illinois, Chicago, IL (United States)

2016-10-25

It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functional theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.

An optimized multilayer structure of CdS layer for CdTe solar cells application

International Nuclear Information System (INIS)

Han Junfeng; Liao Cheng; Jiang Tao; Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V.; Zhao Kui; Klein, A.; Jaegermann, W.

2011-01-01

Research highlights: → Two different methods to prepare CdS films for CdTe solar cells. → A new multilayer structure of window layer for the CdTe solar cell. → Thinner CdS window layer for the solar cell than the standard CdS layer. → Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer (∼80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

Electrodeposition of diamond-like carbon films on titanium alloy using organic liquids: Corrosion and wear resistance

International Nuclear Information System (INIS)

Falcade, Tiago; Shmitzhaus, Tobias Eduardo; Gomes dos Reis, Otávio; Vargas, André Luis Marin; Hübler, Roberto; Müller, Iduvirges Lourdes; Fraga Malfatti, Célia de

2012-01-01

Highlights: ► The electrodeposition may be conducted at room temperature. ► The DLC films have good resistance to corrosion in saline environments. ► The films have lower coefficient of friction than the uncoated substrate. ► The abrasive wear protection is evident in coated systems. - Abstract: Diamond-like carbon (DLC) films have been studied as coatings for corrosion protection and wear resistance because they have excellent chemical inertness in traditional corrosive environments, besides presenting a significant reduction in coefficient of friction. Diamond-like carbon (DLC) films obtained by electrochemical deposition techniques have attracted a lot of interest, regarding their potential in relation to the vapor phase deposition techniques. The electrochemical deposition techniques are carried out at room temperature and do not need vacuum system, making easier this way the technological transfer. At high electric fields, the organic molecules polarize and react on the electrode surface, forming carbon films. The aim of this work was to obtain DLC films onto Ti6Al4V substrate using as electrolyte: acetonitrile (ACN) and N,N-dimethylformamide (DMF). The films were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, potentiodynamic polarization and wear tests. The results show that these films can improve, significantly, the corrosion resistance of titanium and its alloys and their wear resistance.

Electrical characterization of CdTe grain-boundary properties from as processed CdTe/CdS solar cells

Energy Technology Data Exchange (ETDEWEB)

Woods, L.M.; Robinson, G.Y. [Colorado State Univ., Fort Collins, CO (United States); Levi, D.H.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States); Kaydanov, V. [Colorado School of Mines, Golden, CO (United States)

1998-09-01

An ability to liftoff or separate the thin-film polycrystalline CdTe from the CdS, without the use of chemical etches, has enabled direct electrical characterization of the as-processed CdTe near the CdTe/CdS heterointerface. The authors use this ability to understand how a back-contact, nitric-phosphoric (NP) etch affects the grain boundaries throughout the film. Quantitative determination of the grain-boundary barrier potentials and estimates of doping density near the grain perimeter are determined from theoretical fits to measurements of the current vs. temperature. Estimates of the bulk doping are determined from high-frequency resistivity measurements. The light and dark barrier potentials change after the NP etch, and the origin of this change is postulated. Also, a variable doping density within the grains of non-etched material has been determined. These results allow a semi-quantitative grain-boundary band diagram to be drawn that should aid in determining more accurate two-dimensional models for polycrystalline CdTe solar cells.

Acidic aqueous uranium electrodeposition for target fabrication

International Nuclear Information System (INIS)

Saliba-Silva, A.M.; Oliveira, E.T.; Garcia, R.H.L.; Durazzo, M.

2013-01-01

Direct irradiation of targets inside nuclear research or multiple purpose reactors is a common route to produce 99 Mo- 99m Tc radioisotopes. The electroplating of low enriched uranium over nickel substrate might be a potential alternative to produce targets of 235 U. The electrochemistry of uranium at low temperature might be beneficial for an alternative route to produce 99 Mo irradiation LEU targets. Electrodeposition of uranium can be made using ionic and aqueous solutions producing uranium oxide deposits. The performance of uranium electrodeposition is relatively low because a big competition with H 2 evolution happens inside the window of electrochemical reduction potential. This work explores possibilities of electroplating uranium as UO 2 2+ (Uranium-VI) in order to achieve electroplating uranium in a sufficient amount to be commercially irradiated in the future Brazilian RMB reactor. Electroplated nickel substrate was followed by cathodic current electrodeposition from aqueous UO 2 (NO 3 ) 2 solution. EIS tests and modeling showed that a film formed differently in the three tested cathodic potentials. At the lower level, (-1.8V) there was an indication of a double film formation, one overlaying the other with ionic mass diffusion impaired at the interface with nickel substrate as showed by the relatively lower admittance of Warburg component. (author)

Structural, optical and electrical properties of CeO2 thin films simultaneously prepared by anodic and cathodic electrodeposition

Science.gov (United States)

Yang, Yumeng; Du, Xiaoqing; Yi, Chenxi; Liu, Jiao; Zhu, Benfeng; Zhang, Zhao

2018-05-01

CeO2 thin films were deposited on stainless steel (SS) and indium tin oxide (ITO)-coated glass by simultaneous anodic and cathodic electrodeposition, and the influence of negative potential on the formation of ceria films was studied with scanning electron microscopy, X-ray diffraction, Raman spectroscopy, van der Pauw measurements, UV-visible spectroscopy and X-ray photoelectron spectroscopy. The results show that CeO2 films on the anode are slightly affected by the potential, but the particle size, crystal orientation, strain, film thickness, resistivity and Ce(III) content of the films on the cathode increases with increasing potential on the SS substrate. Contradictory to the results of the SS cathode, redshift (Ed changed from 3.95 eV to 3.56 eV and Ei changed from 3.42 eV to 3.04 eV) occurring in the absorption spectrum of CeO2 deposited on the ITO-coated glass cathode indicates that the content of Ce3+ in the cathodic films is dependent on the adopted substrates and decreases as the applied potential is increased.

Potentiodynamical deposition of nanostructured MnO2 film at the assist of electrodeposited SiO2 as template

International Nuclear Information System (INIS)

Wu, Lian-Kui; Xia, Jie; Hou, Guang-Ya; Cao, Hua-Zhen; Tang, Yi-Ping; Zheng, Guo-Qu

2016-01-01

Highlights: • MnO 2 -SiO 2 composite film is prepared by potentiodynamical deposition. • Hierarchical porous MnO 2 films is obtained after the etching of SiO 2 . • The obtained MnO 2 film electrode exhibit high specific capacitance. - Abstract: We report a novel silica co-electrodeposition route to prepare nanostructured MnO 2 films. Firstly, MnO 2 -SiO 2 composite film was fabricated on a stainless steel substrate by potentiodynamical deposition, i.e. cyclic deposition, and then the SiO 2 template was removed by simple immersion in concentrated alkaline solution, leading to the formation of a porous MnO 2 (po-MnO 2 ) matrix. The structure and morphology of the obtained films were characterized using Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The electrochemical properties of the po-MnO 2 film were evaluated by cyclic voltammetry (CV), galvanostatic charge–discharge (GCD) and electrochemical impedance spectroscopy (EIS). Results showed that this porous MnO 2 derived from the MnO 2 -SiO 2 composite film exhibits good electrochemical performance for potential use as a supercapacitor material.

Electrodeposition synthesis and electrochemical properties of nanostructured {gamma}-MnO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Chou, Shulei; Cheng, Fangyi; Chen, Jun [Institute of New Energy Material Chemistry, Nankai University, Tianjin 300071 (China)

2006-11-08

The thin films of carambola-like {gamma}-MnO{sub 2} nanoflakes with about 20nm in thickness and at least 200nm in width were prepared on nickel sheets by combination of potentiostatic and cyclic voltammetric electrodeposition techniques. The as-prepared MnO{sub 2} nanomaterials, which were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), were used as the active material of the positive electrode for primary alkaline Zn/MnO{sub 2} batteries and electrochemical supercapacitors. Electrochemical measurements showed that the MnO{sub 2} nanoflake films displayed high potential plateau (around 1.0V versus Zn) in primary Zn/MnO{sub 2} batteries at the discharge current density of 500mAg{sup -1} and high specific capacitance of 240Fg{sup -1} at the current density of 1mAcm{sup -2}. This indicated the potential application of carambola-like {gamma}-MnO{sub 2} nanoflakes in high-power batteries and electrochemical supercapacitors. The growth process for the one- and three-dimensional nanostructured MnO{sub 2} was discussed on the basis of potentiostatic and cyclic voltammetric techniques. The present synthesis method can be extended to the preparation of other nanostructured metal-oxide films. (author)

Photoluminescence measurement of polycrystalline CdTe made of high purity source material

Energy Technology Data Exchange (ETDEWEB)

Hempel, Hannes; Kraft, Christian; Heisler, Christoph; Geburt, Sebastian; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, Friedrich Schiller Universitaet Jena, Helmholtzweg 3, 07743 Jena (Germany)

2012-07-01

CdTe is a common material for thin film solar cells. However, the mainly used CdTe source material is known to contain a high number of intrinsic defects and impurities. In this work we investigate the defect structure of high purity CdTe by means of Photoluminescence, which is a common method to detect the energy levels of defects in the band gap of semiconductors. We used a 633 nm HeNe-Laser at sample temperatures of 8 K. The examined samples were processed in a new vacuum system based on the PVD method. They yield significantly different spectra on as-grown samples compared to those measured on samples which are grown by the standard process, since the double peak at 1.55 eV was hardly detectable and the A-center correlated transition vanished. Instead a peak at 1.50 eV with pronounced phonon coupling was observed. The 1.50 eV peak is known from other measurements but has not been characterized so far. The intention of this work is to characterize this new feature and the influence of post deposition treatments of the CdTe layers on the PL spectra.

Electrodeposition of organic-inorganic tri-halide perovskites solar cell

Science.gov (United States)

Charles, U. A.; Ibrahim, M. A.; Teridi, M. A. M.

2018-02-01

Perovskite (CH3NH3PbI3) semiconductor materials are promising high-performance light energy absorber for solar cell application. However, the power conversion efficiency of perovskite solar cell is severely affected by the surface quality of the deposited thin film. Spin coating is a low-cost and widely used deposition technique for perovskite solar cell. Notably, film deposited by spin coating evolves surface hydroxide and defeats from uncontrolled precipitation and inter-diffusion reaction. Alternatively, vapor deposition (VD) method produces uniform thin film but requires precise control of complex thermodynamic parameters which makes the technique unsuitable for large scale production. Most deposition techniques for perovskite require tedious surface optimization to improve the surface quality of deposits. Optimization of perovskite surface is necessary to significantly improve device structure and electrical output. In this review, electrodeposition of perovskite solar cell is demonstrated as a scalable and reproducible technique to fabricate uniform and smooth thin film surface that circumvents the need for high vacuum environment. Electrodeposition is achieved at low temperatures, supports precise control and optimization of deposits for efficient charge transfer.

ELECTRODEPOSITION OF NICKEL ON URANIUM

Science.gov (United States)

Gray, A.G.

1958-08-26

A method is described for preparing uranium objects prior to nickel electroplating. The process consiats in treating the surface of the uranium with molten ferric chloride hexahydrate, at a slightiy elevated temperature. This treatment etches the metal surface providing a structure suitable for the application of adherent electrodeposits and at the same time plates the surface with a thin protective film of iron.

Investigation of bearing inner ring-cage thermal characteristics based on CdTe quantum dots fluorescence thermometry

International Nuclear Information System (INIS)

Yan, Ke; Yan, Bei; Li, Ben Q.; Hong, Jun

2017-01-01

Highlights: • A novel method for bearing inner ring/cage thermal monitoring was first presented. • Temperature rise of bearing inner ring in real work condition was obtained. • The rotation speed (6000 r/min) measured here is much higher than all the existing methods. - Abstract: A novel wireless temperature sensor and non-intrusive temperature measurement method for bearing monitoring were proposed in this paper, based on spectrum parameter analysis of CdTe quantum dots films. The CdTe QDs were synthesized and were used in constructing of a sensor film by means of Layer-by-layer Electrostatic Self-assembly method. The fluorescence spectrum properties of the sensor were characterized. At rotation speed 5000–6000 r/min, bearing cage and inner ring temperature were presented first in this paper by the CdTe QDs sensor. The results were verified by theoretical analysis and by thermocouples, with an error typically below 10% or smaller. Compared to the traditional outer ring monitoring, the measurement and monitoring of bearing rolling elements is of very importance, especially at high rotation speed.

Optical properties of zinc oxide-based ternary compounds synthesized by electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Cembrero, J. [Departament d' Enginyeria Mecanica i Materials, Universitat Politecnica de Valencia, Cami de Vera s/n, 46022 Valencia (Spain); Mollar, M.; Tortosa, M. [Departament de Fisica Aplicada, Universitat Politecnica de Valencia, Cami de Vera s/n, 46022 Valencia (Spain); Mari, B.

2008-07-01

Structure, morphology and optical properties of ZnO thin films grown by electrodeposition under different conditions changing both solvent (water or dimethylsulfoxide) and substrate (polycrystalline FTO or monocrystalline GaN) are reported. The results point out the advantage of using dimethylsulfoxide when uniform, oriented and highly transparent films are required. On the other hand electrodeposition in aqueous bath produces perfectly defined hexagonal ZnO columns which can be fully oriented by chosing a suitable substrate. Photoluminescence has only been observed for ZnO films grown in aqueous bath. Ternary compounds as ZnMO (M=Cd,Co,Mn) with a controlled ratio between both cations, and morphology and structure like binary ZnO can be easily obtained from dimethylsulfoxide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Cathodic electrodeposition of ceramic and organoceramic materials. Fundamental aspects.

Science.gov (United States)

Zhitomirsky, I

2002-03-29

Electrodeposition of ceramic materials can be performed by electrophoretic (EPD) or electrolytic (ELD) deposition. Electrophoretic deposition is achieved via motion of charged particles towards an electrode under an applied electric field. Electrolytic deposition produces colloidal particles in cathodic reactions for subsequent deposition. Various electrochemical strategies and deposition mechanisms have been developed for electrodeposition of ceramic and organoceramic films, and are discussed in the present article. Electrode-position of ceramic and organoceramic materials includes mass transport, accumulation of particles near the electrode and their coagulation to form a cathodic deposit. Various types of interparticle forces that govern colloidal stability in the absence and presence of processing additives are discussed. Novel theoretical contributions towards an interpretation of particle coagulation near the electrode surface are reviewed. Background information is given on the methods of particle charging, stabilization of colloids in aqueous and non-aqueous media, electrophoretic mobility of ceramic particles and polyelectrolytes, and electrode reactions. This review also covers recent developments in the electrodeposition of ceramic and organoceramic materials.

Dependency of the band gap of electrodeposited Copper oxide thin films on the concentration of copper sulfate (CuSO4.5H2O) and pH in bath solution for photovoltaic applications

KAUST Repository

Islam, Md. Anisul

2016-03-10

In this study, Copper oxide thin films were deposited on copper plate by electrodeposition process in an electrolytic bath containing CuSO4.5H2O, 3M lactic acid and NaOH. Copper oxide films were electrodeposited at different pH and different concentration of CuSO4.5H2O and the optical band gap was determined from their absorption spectrum which was obtained from UV-Vis absorption spectroscopy. It was found that copper oxide films which were deposited at low concentration of CuSO4.5H2O have higher band gap than those deposited at higher bath concentration. The band gap of copper oxide films also significantly changes with pH of the bath solution. It was also observed that with the increase of the pH of bath solution band gap of copper oxide film decreased. © 2015 IEEE.

Effect of electrodeposition potential on composition and morphology ...

Indian Academy of Sciences (India)

The underpotential deposition mechanism of Cu–Se and In–Se phases was observed in ... Thin films; cyclic voltammetry; CuInGaSe (CIGS); solar cell; electrodeposition. 1. ... trode was a Pt spiral wire and the working electrode was. 735 ...

Preparation of thin films, with base to precursor materials of type Cu-In-Se elaborated by electrodeposition for the solar cells elaboration

International Nuclear Information System (INIS)

Fernandez, A.M.

1999-01-01

Thin films of chalcogenide compounds are promising because they have excellent optoelectronic characteristics to be applied in solar cells. In particular, CuInSe 2 and Cd Te thin films have shown high solar to electrical conversion efficiency. However, this efficiency is limited by the method of preparation, in this case, physical vapor deposition techniques are used. In order to increase the area of deposition t is necessary to use chemical methods, for example, electrodeposition technique. In this paper, the preparation of Cu-In-Se precursors thin films by electrochemical method is reported. These precursors were used to build solar cells with 7.9 % of efficiency. (Author)

Defect structure of electrodeposited chromium layers

International Nuclear Information System (INIS)

Marek, T.; Suevegh, K.; Vertes, A.; El-Sharif, M.; McDougall, J.; Chisolm, C.U.

2000-01-01

Positron annihilation spectroscopy was applied to study the effects of pre-treatment and composition of substrates on the quality and defect structure of electrodeposited thick chromium coatings. The results show that both parameters are important, and a scenario is proposed why the mechanically polished substrate gives more defective film than the electro polished one.

Defect structure of electrodeposited chromium layers

Energy Technology Data Exchange (ETDEWEB)

Marek, T. E-mail: marek@para.chem.elte.hu; Suevegh, K.; Vertes, A.; El-Sharif, M.; McDougall, J.; Chisolm, C.U

2000-06-01

Positron annihilation spectroscopy was applied to study the effects of pre-treatment and composition of substrates on the quality and defect structure of electrodeposited thick chromium coatings. The results show that both parameters are important, and a scenario is proposed why the mechanically polished substrate gives more defective film than the electro polished one.

Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

Science.gov (United States)

Moore, Andrew

Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of CdTe

Electrochemically deposited sol-gel-derived silicate films as a viable alternative in thin-film design.

Science.gov (United States)

Deepa, P N; Kanungo, Mandakini; Claycomb, Greg; Sherwood, Peter M A; Collinson, Maryanne M

2003-10-15

Sol-gel-derived silicate films were electrochemically deposited on conducting surfaces from a sol consisting of tetramethoxysilane (TMOS). In this method, a sufficiently negative potential is applied to the electrode surface to reduce oxygen to hydroxyl ions, which serves as the catalyst for the hydrolysis and condensation of TMOS. The electrodeposition process was followed by the electrochemical quartz crystal microbalance and cyclic voltammetry. The electrodeposited films were characterized for their surface morphology, porosity, and film thickness using atomic force microscopy, electrochemical probe techniques, surface area and pore size analysis, and profilometry. The electrodeposited films were found to have a completely different surface structure and to be significantly rougher relative to spin-coated films. This is likely due in part to the separation of the gelation and evaporation stages of film formation. The electrodeposited films were found to be permeable to simple redox molecules, such as ruthenium(III) hexaammine and ferrocene methanol. Film thickness can be easily varied from 15 microm by varying the electrode potential from -600 mV to more than -1000 mV, respectively. The electrodeposition process was further applied for the electroencapsulation of redox molecules and organic dyes within the silicate network. Cyclic voltammograms for the gel-entrapped ferrocene methanol (FcCH2OH) and ruthenium(II) tris(bipyridine) (Ru(bpy)3(2+)) exhibited the characteristic redox behavior of the molecules. The electroencapsulation of organic dyes in their "native" form proved to be more difficult because these species typically contain reducible functionalities that change the structure of the dye.

Electrical and magnetic properties of electrodeposited nickel incorporated diamond-like carbon thin films

Science.gov (United States)

Pandey, B.; Das, D.; Kar, A. K.

2015-05-01

Nanocomposite diamond-like carbon (DLC) thin films have been synthesized by incorporating nickel (Ni) nanoparticles in DLC matrix with varying concentration of nickel. DLC and Ni-DLC thin films have been deposited on ITO coated glass substrates employing low voltage electrodeposition method. Electrical properties of the samples were studied by measuring current-voltage characteristics and dielectric properties. The current approaches toward an ohmic behavior with metal addition. This tendency of increasing ohmicity is enhanced with increase in dilution of the electrolyte. The conductivity increases with Ni addition and interestingly it continues to increase with dilution of Ni concentration in the electrolyte in the range of our study. Magnetic properties for DLC and Ni-DLC thin film samples were examined by electron paramagnetic resonance (EPR) measurements and Super Conducting Quantum Interference Device (SQUID) measurements. g-Value for DLC is 2.074, whereas it decreases to 2.055 with Ni addition in the electrolyte. This decrement arises from the increased sp2 content in DLC matrix. The magnetic moment vs. magnetic field (m-H) curves of Ni-DLC indicate superparamagnetic behavior which may be due to ferromagnetic contribution from the incorporated nickel nanoparticles in the DLC matrix. The ZFC curve of Ni-DLC after the blocking temperature shows a combined contribution of ferromagnetic, superparamagnetic and paramagnetic nature of the materials persisting up to 300 K.

Electrodeposition of polyfluorene on a carbon nanotube electrode

International Nuclear Information System (INIS)

Valentini, L; Mengoni, F; Mattiello, L; Kenny, J M

2007-01-01

Electrophoretically deposited single-walled carbon nanotube (SWCNT) films on a transparent conducting surface are used as electrodes for the electrodeposition of a π-conjugated polymer formed by the oxidative coupling of fluorene units. This method provides a uniform coverage of the conducting surface with respect to SWCNTs chemically assembled on a gold substrate. Electron microscopy reveals the formation of a polymer-SWCNT nanostructure which imparts distinct electrical properties from those of the polymer electrodeposited on the neat electrode. By combining the attractive properties of SWCNTs and polyfluorene, these nanocomposites open up new opportunities to achieve electrical contacts in nano- to micro-devices

Electrocatalytic activity and operational stability of electrodeposited Pd-Co films towards ethanol oxidation in alkaline electrolytes

Science.gov (United States)

Tsui, Lok-kun; Zafferoni, Claudio; Lavacchi, Alessandro; Innocenti, Massimo; Vizza, Francesco; Zangari, Giovanni

2015-10-01

Direct alkaline ethanol fuel cells (DEFCs) are usually run with Pd anodic catalysts, but their performance can be improved by utilizing alloys of Pd and Co. The oxyphilic Co serves to supply ample -OH to the ethanol oxidation reaction, accelerating the rate limiting step at low overpotential under alkaline conditions. Pd-Co films with compositions between 20 and 80 at% Co can be prepared by electrodeposition from a NH3 complexing electrolyte. Cyclic voltammetry studies show that the ethanol oxidation peak exhibits increasing current density with increasing Co content, reaching a maximum at 77% Co. In contrast, potentiostatic measurements under conditions closer to fuel cell operating conditions show that a 50 at% Co alloy has the highest performance. Importantly, the Co-Pd film is also found to undergo phase and morphological transformations during ethanol oxidation, resulting in a change from a compact film to high surface area flake-like structures containing Co3O4 and CoOOH; such a transformation instead is not observed when operating at a constant potential of 0.7 VRHE.

Vapour and electro-deposited metal films on copper: structure and reactivity

OpenAIRE

McEvoy, Thomas F.

2004-01-01

The systems studied involve deposition of metals of a larger atomic diameter on a Cu{100} single crystal surface under vacuum and determining the structures formed along with the effect on the Cu{100} substrate. Cu microelectrodes were fabricated and characterised with Indium electrodeposited on the electrode surface. The In on Cu{ 100} growth mode is compared with the growth mode of electrodeposited Indium on Cu microelectrodes. The Cu{100}/In system has been studied for the In coverage ...

A novel microfluidic origami photoelectrochemical sensor based on CdTe quantum dots modified molecularly imprinted polymer and its highly selective detection of S-fenvalerate

International Nuclear Information System (INIS)

Wang, Yanhu; Zang, Dejin; Ge, Shenguang; Ge, Lei; Yu, Jinghua; Yan, Mei

2013-01-01

Driven by the urgent demand of high-selectively point-of-care testing device for pesticide, molecular imprinting-photoelectrochemistry (MI-PEC) was introduced into microfluidic paper-based analytical strategy to design a novel paper-based photoelectrochemical (paper-based PEC) protocol. The MI-PEC strategy was constructed based on CdTe quantum dots dotted molecular imprinted polymers (CdTe QDs@MIPs), and triggered by a common ultraviolet lamp (∼365 nm, 50$). The paper-based PEC sensor was fabricated by immobilizing CdTe QDs@MIPs on paper-based screen-printed working electrodes (WEs) via gold nanoparticles (Au NPs), which was electrodeposited on the surface of WE to improve the electron transfer efficiency for high sensitivity. Using S-fenvalerate as model analyte, the produced photocurrent from the proposed paper-based MI-PEC sensor upon ultraviolet radiation decreased with the increasing concentrations of S-fenvalerate solution, and the quenched paper-based MI-PEC showed a low detection limit of 3.2 × 10 −9 mol L −1 . This study has made a successful attempt in the development of highly selective and sensitive photoelectrochemical sensor for S-fenvalerate monitoring

Electrodeposition of Amorphous Molybdenum Chalcogenides from Ionic Liquids and Their Activity for the Hydrogen Evolution Reaction.

Science.gov (United States)

Redman, Daniel W; Rose, Michael J; Stevenson, Keith J

2017-09-19

This work reports on the general electrodeposition mechanism of tetrachalcogenmetallates from 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide. Both tetrathio- and tetraselenomolybdate underwent anodic electrodeposition and cathodic corrosion reactions as determined by UV-vis spectroelectrochemistry. Electrodeposition was carried out by cycling the potential between the anodic and cathodic regimes. This resulted in a film of densely packed nanoparticles of amorphous MoS x or MoSe x as determined by SEM, Raman, and XPS. The films were shown to have high activity for the hydrogen evolution reaction. The onset potential (J = 1 mA/cm 2 ) of the MoS x film was E = -0.208 V vs RHE, and that of MoSe x was E = -0.230 V vs RHE. The Tafel slope of MoS x was 42 mV/decade, and that of MoSe x was 59 mV/decade.

Electrodeposited Reduced Graphene Oxide Films on Stainless Steel, Copper, and Aluminum for Corrosion Protection Enhancement

Directory of Open Access Journals (Sweden)

Abdulkareem Mohammed Ali Al-Sammarraie

2017-01-01

Full Text Available The enhancement of corrosion protection of metals and alloys by coating with simple, low cost, and highly adhered layer is still a main goal of many workers. In this research graphite flakes converted into graphene oxide using modified Hammers method and then reduced graphene oxide was electrodeposited on stainless steel 316, copper, and aluminum for corrosion protection application in seawater at four temperatures, namely, 20, 30, 40, and 50°C. All corrosion measurements, kinetics, and thermodynamics parameters were established from Tafel plots using three-electrode potentiostat. The deposited films were examined by FTIR, Raman, XRD, SEM, and AFM techniques; they revealed high percentages of conversion to the few layers of graphene with confirmed defects.

Electrodeposition of In{sub 2}O{sub 3} thin films from a dimethylsulfoxide based electrolytic solution

Energy Technology Data Exchange (ETDEWEB)

Henriquez, R.; Munoz, E.; Gomez, H. [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Curauma Valparaiso (Chile); Dalchiele, E.A.; Marotti, R.E. [Instituto de Fisica and CINQUIFIMA, Facultad de Ingenieria, Montevideo (Uruguay); Martin, F.; Leinen, D.; Ramos-Barrado, J.R. [Laboratorio de Materiales y Superficie, Departamento de Fisica Aplicada and Ingenieria Quimica, Universidad de Malaga (Spain)

2013-02-15

Indium (III) oxide (In{sub 2}O{sub 3}) thin films have been obtained after heat treatment of In(OH){sub 3} precursor layers grown by a potential cycling electrodeposition (PCED) method from a dimethylsulfoxide (DMSO) based electrolytic solution onto fluorine-doped tin oxide (FTO) coated glass substrates. X-ray diffraction (XRD) measurements indicate the formation of a polycrystalline In{sub 2}O{sub 3} phase with a cubic structure. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed a smooth morphology of the In{sub 2}O{sub 3} thin films after an optimized heat treatment had been developed. The surface composition and chemical state of the semiconductor films was established by X-ray photoelectron spectroscopy analysis. The nature of the semiconductor material, flat band potential and donor density were determined from Mott-Schottky plots. This study reveals that the In{sub 2}O{sub 3} films exhibited n-type conductivity with an average donor density of 2.2 x 10{sup 17} cm{sup -3}. The optical characteristics were determined through transmittance spectra. The direct and indirect band gap values obtained are according to the accepted values for the In{sub 2}O{sub 3} films of 2.83 and 3.54 eV for the indirect and direct band gap values. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Metastability and reliability of CdTe solar cells

Science.gov (United States)

Guo, Da; Brinkman, Daniel; Shaik, Abdul R.; Ringhofer, Christian; Vasileska, Dragica

2018-04-01

Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers devote significant empirical efforts to study these phenomena and to improve semiconductor device stability. Still, understanding the underlying reasons of these instabilities remains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most commonly alleged causes of metastability in CdTe devices, such as ‘migration of Cu’, have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses suggesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe provide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic defects; for example, changing the state of an impurity from an interstitial donor to a substitutional acceptor often is accompanied by generation of a compensating intrinsic interstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal

Electrical and magnetic properties of electrodeposited nickel incorporated diamond-like carbon thin films

Energy Technology Data Exchange (ETDEWEB)

Pandey, B., E-mail: pandey.beauty@yahoo.com [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India); Das, D. [UGC-DAE CSR, Sector III/LB-8, Bidhan Nagar, Kolkata 700098 (India); Kar, A.K. [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India)

2015-05-15

Highlights: • Electrical and magnetic properties of DLC and Ni-DLC thin films are studied. • The ohmicity and conductivity of DLC films rise with nickel addition. • The ohmicity of Ni-DLC is enhanced with increase in dilution of electrolyte. • Dielectric loss is high for Ni-DLC and decreases with frequency till 100 kHz. • (m–H) and (m–T) curves of Ni-DLC indicate superparamagnetic behavior. - Abstract: Nanocomposite diamond-like carbon (DLC) thin films have been synthesized by incorporating nickel (Ni) nanoparticles in DLC matrix with varying concentration of nickel. DLC and Ni-DLC thin films have been deposited on ITO coated glass substrates employing low voltage electrodeposition method. Electrical properties of the samples were studied by measuring current–voltage characteristics and dielectric properties. The current approaches toward an ohmic behavior with metal addition. This tendency of increasing ohmicity is enhanced with increase in dilution of the electrolyte. The conductivity increases with Ni addition and interestingly it continues to increase with dilution of Ni concentration in the electrolyte in the range of our study. Magnetic properties for DLC and Ni-DLC thin film samples were examined by electron paramagnetic resonance (EPR) measurements and Super Conducting Quantum Interference Device (SQUID) measurements. g-Value for DLC is 2.074, whereas it decreases to 2.055 with Ni addition in the electrolyte. This decrement arises from the increased sp{sup 2} content in DLC matrix. The magnetic moment vs. magnetic field (m–H) curves of Ni-DLC indicate superparamagnetic behavior which may be due to ferromagnetic contribution from the incorporated nickel nanoparticles in the DLC matrix. The ZFC curve of Ni-DLC after the blocking temperature shows a combined contribution of ferromagnetic, superparamagnetic and paramagnetic nature of the materials persisting up to 300 K.

Tuning microstructure and magnetic properties of electrodeposited CoNiP films by high magnetic field annealing

Energy Technology Data Exchange (ETDEWEB)

Wu, Chun; Wang, Kai [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Li, Donggang, E-mail: lidonggang@smm.neu.edu.cn [School of Metallurgy, Northeastern University, Shenyang 110819 (China); Lou, Changsheng [School of Materials Science and Engineering, Shenyang Ligong University, Shenyang 110159 (China); Zhao, Yue; Gao, Yang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Wang, Qiang, E-mail: wangq@mail.neu.edu.cn [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China)

2016-10-15

A high magnetic field (up to 12 T) has been used to anneal 2.6-µm-thick Co{sub 50}Ni{sub 40}P{sub 10} films formed by pulse electrodeposition. The effects of high magnetic field annealing on the microstructure and magnetic properties of CoNiP thin films have been investigated. It was found that a high magnetic field accelerated a phase transformation from fcc to hcp and enhanced the preferred hcp-(002) orientation during annealing. Compared with the films annealed without a magnetic field, annealing at 12 T decreased the surface particle size, roughness, and coercivity, but increased the saturation magnetization and remanent magnetization of CoNiP films. The out-of-plane coercivity was higher than that the in-plane for the as-deposited films. After annealing without a magnetic field, the out-of-plane coercivity was equal to that of the in-plane. However, the out-of-plane coercivity was higher than that of the in-plane when annealing at 12 T. These results indicate that high magnetic field annealing is an effective method for tuning the microstructure and magnetic properties of thin films. - Highlights: • High magnetic field annealing accelerated phase transformation from γ to ε. • High magnetic field annealing enhanced preferred hcp-(002) orientation. • High magnetic field annealing decreased particle size, roughness and coercivity. • High magnetic field annealing increased the saturation and remanent magnetization.

Electrodeposition of Iridium Oxide by Cyclic Voltammetry: Application of Response Surface Methodology

Directory of Open Access Journals (Sweden)

Kakooei Saeid

2014-07-01

Full Text Available The effects of scan rate, temperature, and number of cycles on the coating thickness of IrOX electrodeposited on a stainless steel substrate by cyclic voltammetry were investigated in a statistical system. The central composite design, combined with response surface methodology, was used to study condition of electrodeposition. All fabricated electrodes were characterized using electrochemical methods. Field emission scanning electron microscopy and energy-dispersive X-ray spectroscopy were performed for IrOX film characterization. Results showed that scan rate significantly affects the thickness of the electrodeposited layer. Also, the number of cycles has a greater effect than temperature on the IrOX thickness.

Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions.

Science.gov (United States)

Ramos-Ruiz, Adriana; Wilkening, Jean V; Field, James A; Sierra-Alvarez, Reyes

2017-08-15

A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (<8.2% and <3.6% of added Cd and Te, respectively). On the other hand, over the course of 30days, 73% of the Cd and 21% of the Te were released to the synthetic leachate of a continuous-flow column simulating the acidic landfill phase. The dissolved Cd concentration was 3.24-fold higher than the TCLP limit (1mgL -1 ), and 650-fold higher than the maximum contaminant level established by the US-EPA for this metal in drinking water (0.005mgL -1 ). In contrast, the release of Cd and Te to the effluent of the continuous-flow column simulating the methanogenic phase of a landfill was negligible. The remarkable difference in the leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. Copyright © 2017 Elsevier B.V. All rights reserved.

Optical properties of CuCdTeO thin films sputtered from CdTe-CuO composite targets

Energy Technology Data Exchange (ETDEWEB)

Mendoza-Galván, A., E-mail: amendoza@qro.cinvestav.mx [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Laboratory of Applied Optics, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Arreola-Jardón, G. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico); Karlsson, L.H.; Persson, P.O.Å. [Thin Film Physics Division, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Jiménez-Sandoval, S. [Cinvestav-IPN, Unidad Querétaro, Libramiento Norponiente 2000, 76230 Querétaro (Mexico)

2014-11-28

The effective complex dielectric function (ε) of Cu and O containing CdTe thin films is reported in the spectral range of 0.05 to 6 eV. The films were fabricated by rf sputtering from targets comprised by a mixture of CdTe and CuO powders with nominal Cu and O concentrations in the range of 2–10 at.%. Low concentration levels improved the crystalline quality of the films. Spectroscopic ellipsometry and transmittance measurements were used to determine ε. The critical point energies E{sub 1}, E{sub 1} + Δ{sub 1}, and E{sub 2} of CdTe are red-shifted with the incorporation of Cu and O. Also, an absorption band is developed in the infrared range which is associated with a mixture of CdTe and low resistivity phases Cu{sub 2−x}Te according to an effective medium analysis. The elemental distribution of the films was mapped by energy dispersive X-ray spectroscopy using scanning transmission electron microscopy. - Highlights: • Incorporation of 2 to 10 at.% of Cu and O atoms in CdTe films • Improved crystalline quality with 2 and 3 at.% of Cu and O • Complex dielectric function of Cu and O containing CdTe thin films • Effective medium modeling of below band-gap absorption.

Adsorption Behavior of TBPS in the Process of Cu Electrodeposition on an Au Film.

Science.gov (United States)

Chen, Liang-Huei; Liu, Yung-Fang; Krug, Klaus; Lee, Yuh-Lang

2018-05-15

The adsorption behavior of an Cu electroplating additive, 3,3 thiobis-(1-propanesulfonic acid sodium salt) (TBPS) in a process of Cu deposition onto a single crystalline Au(111) surface is studied by an in-situ Surface-Enhanced Infrared Absorption Spectroscopy (SEIRAS). The SEIRAS spectra of the TBPS adlayer on a Cu film is investigated first and compared to that on an Au film. These results are utilized to evaluate the characteristics of TBPS adlayer on the electrode surface during the Cu deposition and stripping processes. The results show that the SEIRAS spectra of TBPS adsorbed on the Cu film resembles closely to that on the Au film, and the most pronounced peaks are symmetric S-O (ss-SO) and asymmetric S-O (as-SO) stretching modes. However, the as-SO band is sharper with a higher intensity on the Cu film. Since the ss-SO and as-SO peaks correspond to the molecular with upright and lie-down orientations, respectively, it implies that the TBPS molecules have higher ratio of lie-down orientation on the Cu film. In the Cu electrodeposition process, the cyclic voltammetry (CV) result shows that the presence of the TBPS in the HClO 4 solution can decrease the inhibition effect of HClO 4 to the Cu deposition. For the spectra measured at various potential during cathodic and anodic sweeping, an obvious change of the spectra occurs at ca. 0.6 V, the initiation of Cu underpotential deposition (Cu-UPD). For potentials higher and lower than 0.6 V, the spectra are similar, respectively, to those measured for the Au and Cu films. This result indicates that the TBPS molecules originally adsorbing on the Au film transfer to the surface of deposited Cu layer. This inference is also confirmed by the variation in wavenumber and peak intensity of ss-SO and as-SO peaks during the potential sweeping.

Surface passivation for CdTe devices

Energy Technology Data Exchange (ETDEWEB)

Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

2017-08-01

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

Ballistic magnetoresistance of electrodeposited nanocontacts in thin film and micrometer wire gaps

International Nuclear Information System (INIS)

Garcia, N.; Cheng, H.; Wang, H.; Nikolic, N.D.; Guerrero, C.A.; Papageorgopoulos, A.C.

2004-01-01

In this paper, we review the recent advances and progress in ballistic magnetoresistance (BMR) in magnetic nanocontacts electrodeposited in thin films and micrometer gaps. We report the influence of magnetostriction in the measurements under different configurations and substrates, as well as the contribution of the magnetic material forming the contacts. To avoid the magnetostriction effect, we have fabricated magnetic nanocontacts in Cu wires and Cu films. Similar BMR results can be observed in these systems. Our results show that the BMR effect should depend on the microproperties of the nanocontacts and should not be related with the macroproperties of the electrodes. The magnetostriction results, measured by an atomic force microscopy system with a built-in electromagnet, clearly show that there is no direct relationship between the displacement (caused by the magnetostriction effect) and the value of BMR. In fact, we present large magnetoresistance values for permalloy, coinciding with displacements in the latter's structure less than 1 nm, which is the smallest clearly observable shift allowed by our atomic force microscope. Repetitions of hundreds of R(H) curves are presented for different materials with different coercive fields. The interpretation of the results is based on the formation of an interfacial transparent layer (non-stoichiometric oxide, sulfur, etc.) at the nanocontact where the theory can explain large magnetoresistance values

Preparation of CdxHg1-xTe films by the method of vapour-phase epitaxy of HgTe on CdTe substrates with subsequent mutual diffusion

International Nuclear Information System (INIS)

Varavin, V.S.; Sidorov, Yu.G.; Remesnik, V.G.; Chikichev, S.I.; Nis, I.E.

1994-01-01

Mirror-like HgTe films have been grown on CdTe substrates of various orientations by vapor deposition of HgTe in temperature gradient. Deposition rates fell in the range of 5-12 μm/h. Subsequent annealing has permitted production of Hg 1-x Cd x Te layers about 15 μm in thickness. Canier density in annealed n-type specimens has been found to constitute (1-20)x10 15 cm -3 at carrier mobility of (2-5)x10 4 cm 2 xV -1 xs -1 and in p-type films - (1-5)x10 16 cm -3 and 200-350 cm 2 xV -1 xs -1 (77 K) respectively

Effects of glycine and current density on the mechanism of electrodeposition, composition and properties of Ni-Mn films prepared in ionic liquid

Science.gov (United States)

Guo, Jiacheng; Guo, Xingwu; Wang, Shaohua; Zhang, Zhicheng; Dong, Jie; Peng, Liming; Ding, Wenjiang

2016-03-01

The effects of glycine on the mechanism of electrodeposition of Ni-Mn alloy film prepared in ChCl-urea ionic liquid were studied in order to control the composition, microstructure and properties of the film. The cyclic voltammograms revealed that the presence of glycine in the ionic liquid can inhibit the reduction of Ni2+ ions but promote the reduction of Mn2+ ions in the cathodic scan. However, it promoted the dissolution of both Ni and Mn deposits in the ChCl-urea ionic liquids during the reverse scan. Glycine changed the mode of Ni-Mn film growth from Volmer-Weber mode into Stranski-Krastanov mode. The Mn content in the Ni-Mn film increased with the increase of concentration of glycine and current density. The Ni-Mn alloy film with 3.1 at.% Mn exhibited the lowest corrosion current density of 3 × 10-7 A/cm2 compared with other films prepared and exhibited better corrosion resistance than pure Ni film in 3.5 wt.% NaCl solution.

An Experimental Determination of the Quasi-Rest Potential of Copper Indium Disulfide Utilizing the Novel Open-Circuit Voltage Transient

Science.gov (United States)

Newell, Michael Jason

Environmental sustainability requires resource management that takes future generations into account. The present generation has witnessed changes across the planet, unprecedented in human history and disrupting communities and cities around the world, due to shifting global climate. This is primarily the result of fossil fuels, which powered modern civilization but dramatically increased levels of CO2 and other greenhouse gases, and may be the least sustainable aspect of human civilization. Chapter 1 justifies the research from an environmental perspective and provides initial research parameters. Thin film photovoltaic (PV) modules are reported the most sustainable among energy production technologies currently available. Electrodeposited PV layers offer significant improvement to sustainability metrics over current thin film production methods, at reduced cost, but have rarely been demonstrated on an industrial scale. Quasi-rest potential (QRP) ultimately led to large-scale, electrodeposited thin film CdTe modules. An in-situ material characterization technique that allows adjustment of the deposition voltage (Vdep) to match the exact experimental conditions, QRP enabled precise control of deposit stoichiometry and crystallinity. Chapter 2 discusses theory and literature regarding QRP, and introduces the open-circuit voltage transient (Voc T), developed by the present research for analyzing QRP as a function of both Vdep and time. VocT data from a CdTe ethylene glycol bath matches details and speculations from the literature. Although predicted to have wide applicability, experimental QRP data have never been published for compounds unrelated to CdTe. Chapter 3 discusses VocTs performed in pursuit of electrodeposited CuInS2, demonstrating functionality as a QRP scan in a variety of ethylene glycol solutions. Stoichiometries of deposited films were improved by using the V ocT to determine appropriate plating voltages. VocTs enabled QRP, in-situ rest potential (EM

Optimization of electrodeposited p-doped Sb{sub 2}Te{sub 3} thermoelectric films by millisecond potentiostatic pulses

Energy Technology Data Exchange (ETDEWEB)

Schumacher, Christian; Akinsinde, Lewis; Zastrow, Sebastian; Heiderich, Sonja; Toellner, William; Nielsch, Kornelius; Bachmann, Julien [Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany); Reinsberg, Klaus G.; Broekaert, Jose A.C. [Institute of Applied and Inorganic Chemistry, University of Hamburg, Martin-Luther-King-Platz 6, 20146 Hamburg (Germany); Rampelberg, Geert; Detavernier, Christophe [Department of Solid State Sciences, University of Ghent, Krijgslaan 281/S1, 9000 Ghent (Belgium)

2012-03-15

A systematic optimization of p-type Sb{sub 2}Te{sub 3} thermoelectric films made by potentiostatic electrodeposition on Au and stainless steel substrates is presented. The influence of the preparative parameters of deposition voltage, concentration, and the deposition method are investigated in a nitric acid solution. As a postdeposition step, the influence of annealing the films is investigated. The use of a potential-controlled millisecond-pulsed deposition method could improve both the morphology and the composition of the films. The samples are characterized in terms of composition, crystallinity, Seebeck coefficient, and electrical resistivity. Pulsed-deposited films exhibit Seebeck coefficients of up to 160 {mu}V K{sup -1} and an electrical conductivity of 280 S cm{sup -1} at room temperature, resulting in power factors of about 700 {mu}W m{sup -1} K{sup -2}. After annealing, power factors of maximum 852 {mu}W m{sup -1} K{sup -2} are achieved. Although the annealing of DC-deposited films significantly increased the power factor, they do not reach the values of the pulsed-deposited films in the preannealing state. Structural analysis is performed with X-ray diffraction and shows the crystalline structure of Sb{sub 2}Te{sub 3} films. The performance is tuned by annealing of deposited films up to 300 C under He atmosphere while performing in-situ X-ray diffraction and resistivity measurements. The chemical analysis of the films is performed by inductively coupled plasma optical emission spectroscopy (ICP-OES) as well as scanning electron microscope energy dispersive X-ray analysis (SEM-EDX). (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Review of CdTe medical applications

Energy Technology Data Exchange (ETDEWEB)

Entine, G; Garcia, D A; Tow, D E

1977-02-01

CdTe sensors are now being used in several areas of nuclear medicine. CdTe probe technics, originally developed to study dental pathology in dog models, are being used clinically to diagnose venous thrombosis of the legs and to detect occult dental infections in patients scheduled for prosthetic cardiovascular and orthopedic surgery. Similar instrumentation is in use in animal research of myocardial infarction and synthetic tooth substitutes. Transmission technics have also been developed to diagnose pulmonary edema and to measure bone mineral changes in space flight. Investigations are also underway in the use of linear or two-dimensional arrays of CdTe gamma sensors for medical imaging. Economic considerations have slowed this work, but the technology appears to be available. Development of photoconductive CdTe X-ray detectors for scintigraphic scanners has also begun. Rapid detector improvement will be needed for success in this field, but the potential usefulness is very great. Together, the present application results are encouraging and wide use of CdTe detectors should occur within only a few years.

Structural and optical properties of electrodeposited culnSe{sub 2} thin films for photovoltaic solar cells; Propiedades estructurales y opticas de laminas delgadas de CulnSe2 electrodepositadas para su aplicacion en celulas solares fotovoltaicas

Energy Technology Data Exchange (ETDEWEB)

Guillen, C; Herrero, J; Galiano, F

1990-07-01

Optical an structural properties of electrodeposited copper indium diselenide, CulnSe2, thin films were studied for its application in photovoltaic devices. X-ray diffraction patterns showed that thin films were grown in chalcopyrite phase after suitable treatments. Values of Eg for the CulnSe2 thin films showed a dependence on the deposition potential as determined by optical measurements. (Author) 47 refs.

Thin-film photovoltaic technology

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

2010-07-01

The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

Copper-zinc electrodeposition in alkaline-sorbitol medium: Electrochemical studies and structural, morphological and chemical composition characterization

Science.gov (United States)

de Almeida, M. R. H.; Barbano, E. P.; de Carvalho, M. F.; Tulio, P. C.; Carlos, I. A.

2015-04-01

The galvanostatic technique was used to analyze the electrodeposition of Cu-Zn on to AISI 1010 steel electrode from an alkaline-sorbitol bath with various proportions of the metal ions in the bath: Cu70/Zn30, Cu50/Zn50 and Cu30/Zn70. Coloration of Cu-Zn films were whitish golden, light golden, golden/gray depending on the Cu2+/Zn2+ ratios in the electrodeposition bath, deposition current density (jdep) and charge density (qdep). The highest current efficiency was ∼54.0%, at jdep -1.0 mA cm-2 and qdep 0.40 C cm-2 in the Cu70/Zn30 bath. Energy dispersive spectroscopy indicated that electrodeposits produced from the bath Cu70/Zn30 showed higher Cu content at lower jdep. Also, for same jdep the Cu content increased with qdep. Scanning electron microscopy showed that Cu-Zn electrodeposits of high quality were obtained from the Cu70/Zn30 bath, since the films were fine-grained, except the obtained at jdep -20.0 mA cm-2 and qdep 10.0 C cm-2. Also, these electrodeposits did not present cracks. X-ray analysis of the Cu-Zn electrodeposits obtained at jdep -8.0, -20.0 and -40.0 mA cm-2, in each case, with qdep 2.0 and 10.0 C cm-2, in the Cu70/Zn30 bath, suggested the occurrence of a mixture of the following phases, CuZn, CuZn5 and Cu5Zn8. Galvanostatic electrodeposits of Cu-Zn obtained from sorbitol-alkaline baths exhibited whitish golden color, with good prospects for industrial applications, especially for decorative purposes.

Enhanced electrochemiluminescence quenching of CdS:Mn nanocrystals by CdTe QDs-doped silica nanoparticles for ultrasensitive detection of thrombin

Science.gov (United States)

Shan, Yun; Xu, Jing-Juan; Chen, Hong-Yuan

2011-07-01

This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO2 NPs). CdTe/SiO2 NPs were synthesized via the Stöber method and showed black bodies' strong absorption in a wide spectral range without excitonic emission, which made them excellent ECL quenchers. Within the effective distance of energy scavenging, the ECL quenching efficiency was dependent on the number of CdTe QDs doped into the silica NPs. Using ca. 200 CdTe QDs doped silica NPs on average of 40 nm in diameter as ECL quenching labels, attomolar detection of thrombin was successfully realized. The protein detection involves a competition binding event, based on thrombin replacing CdTe/SiO2 NPs labeled probing DNA which is hybridized with capturing aptamer immobilized on a CdS:Mn NCs film modified glassy carbon electrode surface by specific aptamer-protein affinity interactions. It results in the displacement of ECL quenching labels from CdS:Mn NCs film and concomitant ECL signal recovery. Owing to the high-content CdTe QDs in silica NP, the increment of ECL intensity (ΔIECL) and the concentration of thrombin showed a double logarithmic linear correlation in the range of 5.0 aM~5.0 fM with a detection limit of 1aM. And, the aptasensor hardly responded to antibody, bovine serum albumin (BSA), haemoglobin (Hb) and lysozyme, showing good detection selectivity for thrombin. This long-distance energy scavenging could have a promising application perspective in the detection of biological recognition events on a molecular level.This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO2 NPs). CdTe/SiO2 NPs were synthesized via

CdTe aggregates in KBr crystalline matrix

International Nuclear Information System (INIS)

Bensouici, A.; Plaza, J.L.; Dieguez, E.; Halimi, O.; Boudine, B.; Addala, S.; Guerbous, L.; Sebais, M.

2009-01-01

In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E g (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 deg. C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.

CdTe aggregates in KBr crystalline matrix

Energy Technology Data Exchange (ETDEWEB)

Bensouici, A., E-mail: bensouicia@yahoo.f [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria); Plaza, J.L., E-mail: joseluis.plaza@uam.e [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Dieguez, E. [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Halimi, O.; Boudine, B.; Addala, S. [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria); Guerbous, L. [Centre de recherche nucleaire d' Alger (CRNA), Alger 16000 (Algeria); Sebais, M. [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria)

2009-09-15

In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E{sub g} (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 deg. C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.

Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

Energy Technology Data Exchange (ETDEWEB)

Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

2015-01-15

The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

One-step electrodeposition process of CuInSe2: Deposition time effect

Indian Academy of Sciences (India)

Administrator

CuInSe2 thin films were prepared by one-step electrodeposition process using a simplified two- electrodes system. ... homojunctions or heterojunctions (Rincon et al 1983). Efficiency of ... deposition times onto indium thin oxide (ITO)-covered.

Design of Novel Organic Thin Film Transistors for Wearable Electronics

Science.gov (United States)

2012-08-01

TECHNOLOGICAL ACHIEVEMENTS 7 1.0 INTRODUCTION 7 2.0 CHARACTERISTICS OF OTFTS 3.0 USE OF PHTHALOCYANINE AS A BIOSENSOR 8 4.0 CATHODIC ELECTRODEPOSITION ...public release; distribution is unlimited. 12 4.0 CATHODIC ELECTRODEPOSITION OF ANATASE HIGH DİELECTRIC CONSTANT TITANIA Polycrystalline...oxidised film which is used and left in air for 3 months. 11 5 Raman Spectra for TiO2 films electrodeposited at temperatures: (a) 296K, (b) 318K

The fabrication of short metallic nanotubes by templated electrodeposition

Energy Technology Data Exchange (ETDEWEB)

Chienwen, Huang; Hao Yaowu, E-mail: yhao@uta.ed [Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, TX 76051 (United States)

2009-11-04

Template-based electrochemical synthesis has widely been used to produce metal nanowires and nanorods. Commercially available filtration membranes, such as anodic aluminum oxide (AAO) and polycarbonate track etch membranes, have commonly been utilized as hard templates for this purpose. In this process, a thick metal film is usually sputtered or vacuum evaporated onto one side of the membrane to block the pores and serve as the working electrode for the subsequent electrodeposition. Here, we show that during the deposition of the metal electrode for AAO membranes, the electrode metal diffuses into the pores and is deposited on the pore walls which leads to preferential electrodeposition of metal on the walls and therefore forms metal tubes. This phenomenon has been utilized to fabricate short nanotubes by carefully controlling the electrodeposition conditions. The process is a straightforward method for any electroplatable materials to form nanoscale tubular structures. The effects of working electrodes and electrodeposition conditions on the formation of tubular structures are discussed in detail. A new mechanism based on this simple fact is proposed to explain the formation of Ni tubes by Ni-Cu co-deposition. Also, we demonstrate how to distinguish magnetic nanotubes from nanorods by a simple magnetic measurement.

The fabrication of short metallic nanotubes by templated electrodeposition

International Nuclear Information System (INIS)

Huang Chienwen; Hao Yaowu

2009-01-01

Template-based electrochemical synthesis has widely been used to produce metal nanowires and nanorods. Commercially available filtration membranes, such as anodic aluminum oxide (AAO) and polycarbonate track etch membranes, have commonly been utilized as hard templates for this purpose. In this process, a thick metal film is usually sputtered or vacuum evaporated onto one side of the membrane to block the pores and serve as the working electrode for the subsequent electrodeposition. Here, we show that during the deposition of the metal electrode for AAO membranes, the electrode metal diffuses into the pores and is deposited on the pore walls which leads to preferential electrodeposition of metal on the walls and therefore forms metal tubes. This phenomenon has been utilized to fabricate short nanotubes by carefully controlling the electrodeposition conditions. The process is a straightforward method for any electroplatable materials to form nanoscale tubular structures. The effects of working electrodes and electrodeposition conditions on the formation of tubular structures are discussed in detail. A new mechanism based on this simple fact is proposed to explain the formation of Ni tubes by Ni-Cu co-deposition. Also, we demonstrate how to distinguish magnetic nanotubes from nanorods by a simple magnetic measurement.

Study on response function of CdTe detector

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyunduk; Cho, Gyuseong [Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Kang, Bo-Sun [Department of Radiological Science, Catholic University of Daegu, Kyoungsan, Kyoungbuk 712-702 (Korea, Republic of)], E-mail: bskang@cu.ac.kr

2009-10-21

So far the origin of the mechanism of light emission in the sonoluminescence has not elucidated whether it is due to blackbody radiation or bremsstrahlung. The final goal of our study is measuring X-ray energy spectrum using high-sensitivity cadmium telluride (CdTe) detector in order to obtain information for understanding sonoluminescence phenomena. However, the scope of this report is the measurement of X-ray spectrum using a high-resolution CdTe detector and determination of CdTe detector response function to obtain the corrected spectrum from measured soft X-ray source spectrum. In general, the measured spectrum was distorted by the characteristics of CdTe detector. Monte Carlo simulation code, MCNP, was used to obtain the reference response function of the CdTe detector. The X-ray spectra of {sup 57}Co, {sup 133}Ba, and {sup 241}Am were obtained by a 4x4x1.0(t) mm{sup 3} CdTe detector at room temperature.

Polypyrrole electrodeposited on copper from an aqueous phosphate solution: Corrosion protection properties

OpenAIRE

Redondo, Clara; Breslin, Carmel B.

2007-01-01

Highly adherent and homogenous polypyrrole films were electrodeposited at copper from a dihydrogen phosphate solution. The polypyrrole films were electrosynthesized in the overoxidized state by cycling the copper electrode from –0.4 to 1.8 V (SCE) in a pyrrole-containing phosphate solution. The growth of the polypyrrole films was facilitated by the initial oxidation of the copper electrode in the phosphate solution to generate a mixed copper–phosphate, copper oxide or hydroxide layer. This la...

Bromine doping of CdTe and CdMnTe epitaxial layers grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Waag, A. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Scholl, S. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Schierstedt, K. von (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Hommel, D. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

1993-03-01

We report on the n-type doping of CdTe and CdMnTe with bormine as a novel dopant material. /the thin films were grown by molecular beam epitaxy. ZnBr[sub 2] was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8x10[sup 18] cm[sup -3] could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr[sub 2] source temperatures up to 60 C - corresponding to a free carrier concentration of (2-3)x10[sup 18] cm[sup -3] - the free carrier concentration of the epitaxial film increases with ZnBr[sub 2] source temperature. For higher ZnBr[sub 2] source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr[sub 2] source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed. (orig.)

Synthesis of ultra-long cadmium telluride nanotubes via combinational chemical transformation

Energy Technology Data Exchange (ETDEWEB)

Park, Kee-Ryung; Cho, Hong-Baek; Choa, Yong-Ho, E-mail: choa15@hanyang.ac.kr

2017-03-01

Synthesis of high-throughput cadmium telluride (CdTe) nanotubes with an ultra-long aspect ratio is presented via a combination process concept combined with electrospinning, electrodeposition, and cationic exchange reaction. Ultra-long sacrificial silver (Ag) nanofibers were synthesized by electrospinning involving two-step calcination, and were then electrodeposited to create silver telluride nanotubes. These nanotubes underwent cationic exchange reaction in cadmium nitrate tetrahydrate solution with the aid of a ligand, tributylphosphine (TBP). Analysis showed that ultra-long pure zinc blende CdTe nanotubes were obtained with controlled dimension and uniform morphology. The thermodynamic driving force induced by the coordination of methanol solvent and TBP attributed to overcome the kinetic barrier between Ag{sub 2}Te and CdTe nanotubes, facilitating the synthesis of CdTe nanotubes. This synthetic process involving a topotactic reaction route paves a way for high-throughput extended synthesis of new chalcogenide hollow nanotubes for application in photodetectors and solar cells. - Highlights: • High throughput synthetic route of hollow CdTe nanotubes with ultra-long aspect ratio. • Chemical combination of electrospinning, electrodeposition & cation exchange reaction. • Pure zinc blende CdTe by controlled dimension & structural variation of Ag nanofibers. • Potential for the high throughput synthesis of new exotic chalcogenide nanotubes.

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

2018-05-01

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

High Throughput Manufacturing of Thin-Film CdTe Photovoltaic Materials; Final Subcontract Report, 16 November 1993-31 December 1998

International Nuclear Information System (INIS)

Sandwisch, D.W.

1999-01-01

This report describes work performed by Solar Cells, Inc. (SCI), during this Photovoltaic Manufacturing Technology (PVMaT) subcontract. Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. SCI has developed this technology and is preparing to scale its pilot production capabilities to a multi-megawatt level. This four-phase PVMaT subcontract supports these efforts. The work was related to product definition, process definition, equipment engineering, and support programs development. In the area of product definition and demonstration, two products were specified and demonstrated-a grid-connected, frameless, high-voltage product that incorporates a pigtail potting design and a remote low-voltage product that may be framed and may incorporate a junction box. SCI produced a 60.3-W thin-film CdTe module with total-area efficiency of 8.4%; SCI also improved module pass rate on the interim qualification test protocol from less than 20% to 100% as a result of work related to the subcontract. In the manufacturing process definition area, the multi-megawatt manufacturing process was defined, several of the key processes were demonstrated, and the process was refined and proven on a 100-kW pilot line that now operates as a 250-kW line. In the area of multi-megawatt manufacturing-line conceptual design review, SCI completed a conceptual layout of the multi-megawatt lines. The layout models the manufacturing line and predicts manufacturing costs. SCI projected an optimized capacity, two-shift/day operation of greater than 25 MW at a manufacturing cost of below$1.00/W

High Throughput Manufacturing of Thin-Film CdTe Photovoltaic Materials; Final Subcontract Report, 16 November 1993-31 December 1998

Energy Technology Data Exchange (ETDEWEB)

Sandwisch, D. W. (Solar Cells, Inc.)

1999-09-02

This report describes work performed by Solar Cells, Inc. (SCI), during this Photovoltaic Manufacturing Technology (PVMaT) subcontract. Cadmium telluride (CdTe) is recognized as one of the leading materials for low-cost photovoltaic modules. SCI has developed this technology and is preparing to scale its pilot production capabilities to a multi-megawatt level. This four-phase PVMaT subcontract supports these efforts. The work was related to product definition, process definition, equipment engineering, and support programs development. In the area of product definition and demonstration, two products were specified and demonstrated-a grid-connected, frameless, high-voltage product that incorporates a pigtail potting design and a remote low-voltage product that may be framed and may incorporate a junction box. SCI produced a 60.3-W thin-film CdTe module with total-area efficiency of 8.4%; SCI also improved module pass rate on the interim qualification test protocol from less than 20% to 100% as a result of work related to the subcontract. In the manufacturing process definition area, the multi-megawatt manufacturing process was defined, several of the key processes were demonstrated, and the process was refined and proven on a 100-kW pilot line that now operates as a 250-kW line. In the area of multi-megawatt manufacturing-line conceptual design review, SCI completed a conceptual layout of the multi-megawatt lines. The layout models the manufacturing line and predicts manufacturing costs. SCI projected an optimized capacity, two-shift/day operation of greater than 25 MW at a manufacturing cost of below $1.00/W.

Electrodeposition properties of modified cational epoxy resin-type photoresist

International Nuclear Information System (INIS)

Yong He; Yunlong Zhang; Feipeng Wu; Miaozhen Li; Erjian Wang

1999-01-01

Multi-component cationic epoxy and acrylic resin system for ED photoresist was used in this work, since they can provide better storage stability for ED emulsion and better physical and chemical properties of deposited film than one-component system. The cationic main resin (AE) was prepared from amine modified epoxy resins and then treated with acetic acid. The amination degree was controlled as required. The synthetic procedure of cationic main resins is described in scheme I. The ED photoresist (AME) is composed of cationic main resin (AE) and nonionic multifunctional acrylic crosslinkers (PETA), in combination with suitable photo-initiator. They can easily be dispersed in deionized water to form a stable ED emulsion. The exposed part of deposited film upon UV irradiation occurs crosslinking to produce an insoluble semi-penetrating network and the unexposed part remains good solubility in the acidic water solution. It is readily utilized for fabrication of fine micropattern. The electrodeposition are carried out on Cu plate at room temperature. To evaluate the electrodeposition properties of ED photoresist (AME), the different influences are examined

Copper electrodeposition from an acidic plating bath containing accelerating and inhibiting organic additives

International Nuclear Information System (INIS)

Pasquale, M.A.; Gassa, L.M.; Arvia, A.J.

2008-01-01

Copper electrodeposition on copper from still plating solutions of different compositions was investigated utilising electrochemical impedance spectroscopy (EIS), cyclic voltammetry, and scanning electron microscopy (SEM). An acid copper sulphate plating base solution was employed either with or without sodium chloride in the presence of a single additive, either polyethylene glycol (PEG) or 3-mercapto-2-propanesulphonic acid (MPSA), and their mixture. Thallium underpotential deposition/anodic stripping was employed to determine the adsorption capability of additives on copper. In the absence of chloride ions, MPSA shows a moderate adsorption on copper, whereas PEG is slightly adsorbed. At low cathodic overpotentials, the simultaneous presence of MPSA and chloride ions accelerates copper electrodeposition through the formation of an MPSA-chloride ion complex in the solution, particularly for about 220 μM sodium chloride. The reverse effect occurs in PEG-sodium chloride plating solutions. In this case, from EIS data the formation of a film that interferes with copper electrodeposition can be inferred. At higher cathodic overpotentials, when copper electrodeposition is under mass transport control, the cathode coverage by a PEG-copper chloride-mediated film becomes either partially or completely detached as the concentration of chloride ions at the negatively charged copper surface diminishes. The copper cathode grain topography at the μm scale depends on the cathodic overpotential, plating solution composition and average current density. Available data about the solution constituents and their adsorption on copper make it possible to propose a likely complex mechanism to understand copper electrodeposition from these media, including the accelerating effect of MPSA and the dynamics of PEG-copper chloride complex adsorbate interfering with the surface mobility of depositing copper ad-ions/ad-atoms

Enhanced electrochemiluminescence quenching of CdS:Mn nanocrystals by CdTe QDs-doped silica nanoparticles for ultrasensitive detection of thrombin.

Science.gov (United States)

Shan, Yun; Xu, Jing-Juan; Chen, Hong-Yuan

2011-07-01

This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO(2) NPs). CdTe/SiO(2) NPs were synthesized via the Stöber method and showed black bodies' strong absorption in a wide spectral range without excitonic emission, which made them excellent ECL quenchers. Within the effective distance of energy scavenging, the ECL quenching efficiency was dependent on the number of CdTe QDs doped into the silica NPs. Using ca. 200 CdTe QDs doped silica NPs on average of 40 nm in diameter as ECL quenching labels, attomolar detection of thrombin was successfully realized. The protein detection involves a competition binding event, based on thrombin replacing CdTe/SiO(2) NPs labeled probing DNA which is hybridized with capturing aptamer immobilized on a CdS:Mn NCs film modified glassy carbon electrode surface by specific aptamer-protein affinity interactions. It results in the displacement of ECL quenching labels from CdS:Mn NCs film and concomitant ECL signal recovery. Owing to the high-content CdTe QDs in silica NP, the increment of ECL intensity (ΔI(ECL)) and the concentration of thrombin showed a double logarithmic linear correlation in the range of 5.0 aM∼5.0 fM with a detection limit of 1aM. And, the aptasensor hardly responded to antibody, bovine serum albumin (BSA), haemoglobin (Hb) and lysozyme, showing good detection selectivity for thrombin. This long-distance energy scavenging could have a promising application perspective in the detection of biological recognition events on a molecular level.

Cathodic electrodeposition of mixed molybdenum tungsten oxides from peroxo-polymolybdotungstate solutions.

Science.gov (United States)

Kondrachova, Lilia; Hahn, Benjamin P; Vijayaraghavan, Ganesh; Williams, Ryan D; Stevenson, Keith J

2006-12-05

Mixed molybdenum tungsten trioxide films of varying stoichiometry (MoxW1 - xO3, 0 cathodic electrodeposition on indium tin oxide (ITO)-coated glass substrates from aqueous peroxo-polymolybdotungstate solutions. Electrochemical quartz crystal microbalance (EQCM), cyclic voltammetry, and chronocoulometry were used to gain insight into the electrodeposition mechanism. The compositional and structural properties were characterized for MoxW1 - xO3 films deposited at intermediate potentials (-0.35 V vs Ag/AgCl) and sintered at 250 degrees C using energy-dispersive spectroscopy, X-ray diffraction, and Raman spectroscopy. These studies reveal that films consist of homogeneously mixed MoxW1 - xO3, with an enriched Mo content ranging in composition from 0.4 < x < 0.7 depending upon the mol % Mo present in the deposition solution. Chronoamperometry and spectroelectrochemical measurements were conducted to estimate lithium ion diffusion coefficients and coloration efficiencies for the mixed metal oxide films in 1 M LiClO4/propylene carbonate. The subtle interplay between structural and compositional properties due to the uniform mixing of Mo and W oxide components shows that electrochromic and lithium ion transport properties are moderately enhanced relative to those of single-component WO3 and MoO3 and demonstrate improved structural stability over pure MoO3 polymorphs during electrochemical cycling.

CdTe as a passivating layer in CdTe/HgCdTe heterostructures

International Nuclear Information System (INIS)

Virt, I. S.; Kurilo, I. V.; Rudyi, I. A.; Sizov, F. F.; Mikhailov, N. N.; Smirnov, R. N.

2008-01-01

CdTe/Hg 1-x Cd x Te heterostructures are studied. In the structures, CdTe is used as a passivating layer deposited as a polycrystal or single crystal on a single-crystal Hg 1-x Cd x Te film. The film and a passivating layer were obtained in a single technological process of molecular beam epitaxy. The structure of passivating layers was studied by reflection high-energy electron diffraction, and the effect of the structure of the passivating layer on the properties of the active layer was studied by X-ray diffractometry. Mechanical properties of heterostructures were studied by the microhardness method. Electrical and photoelectrical parameters of the Hg 1-x Cd x Te films are reported.

Electrodeposition of germanium from supercritical fluids.

Science.gov (United States)

Ke, Jie; Bartlett, Philip N; Cook, David; Easun, Timothy L; George, Michael W; Levason, William; Reid, Gillian; Smith, David; Su, Wenta; Zhang, Wenjian

2012-01-28

Several Ge(II) and Ge(IV) compounds were investigated as possible reagents for the electrodeposition of Ge from liquid CH(3)CN and CH(2)F(2) and supercritical CO(2) containing as a co-solvent CH(3)CN (scCO(2)) and supercritical CH(2)F(2) (scCH(2)F(2)). For Ge(II) reagents the most promising results were obtained using [NBu(n)(4)][GeCl(3)]. However the reproducibility was poor and the reduction currents were significantly less than the estimated mass transport limited values. Deposition of Ge containing films was possible at high cathodic potential from [NBu(n)(4)][GeCl(3)] in liquid CH(3)CN and supercritical CO(2) containing CH(3)CN but in all cases they were heavily contaminated by C, O, F and Cl. Much more promising results were obtained using GeCl(4) in liquid CH(2)F(2) and supercritical CH(2)F(2). In this case the reduction currents were consistent with mass transport limited reduction and bulk electrodeposition produced amorphous films of Ge. Characterisation by XPS showed the presence of low levels of O, F and C, XPS confirmed the presence of Ge together with germanium oxides, and Raman spectroscopy showed that the as deposited amorphous Ge could be crystallised by the laser used in obtaining the Raman measurements.

Photostable epoxy polymerized carbon quantum dots luminescent thin films and the performance study

Directory of Open Access Journals (Sweden)

Chang Zhang

Full Text Available High photostable epoxy polymerized carbon quantum dots (C-dots luminescent thin films were prepared and their performances were compared with the CdTe quantum dots (QDs. First, water soluble C-dots (λem = 543.60 nm were synthesized. Poly (ethylene glycol diglycidyl ether (PEG and diaminooctane were used as the polymer matrix to make the epoxy resin films. FT-IR spectra showed that there were vibration at 3448 cm−1 and 1644 cm−1 which contributed to -OH and -NH respectively. SEM observations showed that the polymerizations of the films were uniform and there were no structure defects. Mechanical tests showed the tensile modulus of C-dots composite films were 4.6, 4.9, 6.4 and 7.8 MPa respectively with corresponding 0%, 1%, 2% and 5% mass fraction of C-dots, while the tensile modulus of CdTe QDs films were 4.6 MPa under the same mass fraction of CdTe QDs. Compared with semiconductor QDs, the decay of quantum yield were 5% and 10% for the C-dots and CdTe QDs, respectively. The pictures in the continuous irradiation of 48 h showed that the C-dots film was more photostable. This study provides much helpful and profound towards the fluorescent enhancement films in the field of flexible displays. Keywords: Carbon-dots, Waterborne epoxy resin, Luminescent materials, Quantum dots displays

Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

Directory of Open Access Journals (Sweden)

Christian Dunkel

2014-04-01

Full Text Available Well-ordered 3D mesoporous indium tin oxide (ITO films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs. Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene-b-poly(ethylene oxide block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs.

Limits of ZnO Electrodeposition in Mesoporous Tin Doped Indium Oxide Films in View of Application in Dye-Sensitized Solar Cells

Science.gov (United States)

Dunkel, Christian; von Graberg, Till; Smarsly, Bernd M.; Oekermann, Torsten; Wark, Michael

2014-01-01

Well-ordered 3D mesoporous indium tin oxide (ITO) films obtained by a templated sol-gel route are discussed as conductive porous current collectors. This paper explores the use of such films modified by electrochemical deposition of zinc oxide (ZnO) on the pore walls to improve the electron transport in dye-sensitized solar cells (DSSCs). Mesoporous ITO film were dip-coated with pore sizes of 20–25 nm and 40–45 nm employing novel poly(isobutylene)-b-poly(ethylene oxide) block copolymers as structure-directors. After electrochemical deposition of ZnO and sensitization with the indoline dye D149 the films were tested as photoanodes in DSSCs. Short ZnO deposition times led to strong back reaction of photogenerated electrons from non-covered ITO to the electrolyte. ITO films with larger pores enabled longer ZnO deposition times before pore blocking occurred, resulting in higher efficiencies, which could be further increased by using thicker ITO films consisting of five layers, but were still lower compared to nanoporous ZnO films electrodeposited on flat ITO. The major factors that currently limit the application are the still low thickness of the mesoporous ITO films, too small pore sizes and non-ideal geometries that do not allow obtaining full coverage of the ITO surface with ZnO before pore blocking occurs. PMID:28788618

Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

International Nuclear Information System (INIS)

Phuan, Yi Wen; Chong, Meng Nan; Zhu, Tao; Yong, Siek-Ting; Chan, Eng Seng

2015-01-01

Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm 2 at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe 2 O 3 ) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600 °C. As the

Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

Energy Technology Data Exchange (ETDEWEB)

Phuan, Yi Wen [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Chong, Meng Nan, E-mail: Chong.Meng.Nan@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Zhu, Tao; Yong, Siek-Ting [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Chan, Eng Seng [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia)

2015-09-15

Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600

Recent Advances in Superhydrophobic Electrodeposits

Directory of Open Access Journals (Sweden)

Jason Tam

2016-03-01

Full Text Available In this review, we present an extensive summary of research on superhydrophobic electrodeposits reported in the literature over the past decade. As a synthesis technique, electrodeposition is a simple and scalable process to produce non-wetting metal surfaces. There are three main categories of superhydrophobic surfaces made by electrodeposition: (i electrodeposits that are inherently non-wetting due to hierarchical roughness generated from the process; (ii electrodeposits with plated surface roughness that are further modified with low surface energy material; (iii composite electrodeposits with co-deposited inert and hydrophobic particles. A recently developed strategy to improve the durability during the application of superhydrophobic electrodeposits by controlling the microstructure of the metal matrix and the co-deposition of hydrophobic ceramic particles will also be addressed.

Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

Science.gov (United States)

Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

2013-03-01

Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

Energy Band Gap, Intrinsic Carrier Concentration and Fermi Level of CdTe Bulk Crystal between 304 K and 1067 K

Science.gov (United States)

Su, Ching-Hua

2007-01-01

Optical transmission measurements were performed on CdTe bulk single crystal. It was found that when a sliced and polished CdTe wafer was used, a white film started to develop when the sample was heated above 530 K and the sample became opaque. Therefore, a bulk crystal of CdTe was first grown in the window area by physical vapor transport; the optical transmission was then measured and from which the energy band gap was derived between 304 and 1067 K. The band gaps of CdTe can be fit well as a function of temperature using the Varshini expression: Eg (e V) = 1.5860 - 5.9117xl0(exp -4) T(sup 2)/(T + 160). Using the band gap data, the high temperature electron-hole equilibrium was calculated numerically by assuming the Kane's conduction band structure and a heavy-hole parabolic valance band. The calculated intrinsic carrier concentrations agree well with the experimental data reported previously. The calculated intrinsic Fermi levels between 270 and 1200 K were also presented.

Investigations on the electrodeposition behaviors of Bi0.5Sb1.5Te3 thin film from nitric acid baths

International Nuclear Information System (INIS)

Li Feihui; Huang Qinghua; Wang Wei

2009-01-01

The electrochemical reduction process of Bi 3+ , HTeO 2 + , Sb III and their mixtures in nitric acid medium was investigated by means of cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) measurements. The reduction products electrodeposited at various potentials were examined using X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The results show that cathodic process in the nitric acid solution containing Bi 3+ , HTeO 2 + and Sb III involves the following reduction reactions in different polarizing potential ranges: In low polarizing potential ranges, Te 0 is formed firstly on the electrode surface through the electrochemical reduction of HTeO 2 + ; with the negative shift of the cathodic polarizing potential, the reduction reaction of Bi 3+ with Te 0 to form Bi 2 Te 3 takes place; when the cathodic polarizing potential is negative enough, Bi 3+ and Sb III react with Te 0 to form Bi 0.5 Sb 1.5 Te 3 . The results indicate that Bi 0.5 Sb 1.5 Te 3 films can be fabricated by controlling the electrodepositing potential in a proper high potential ranges.

Electro-Deposition Laboratory

Data.gov (United States)

Federal Laboratory Consortium — The electro-deposition laboratory can electro-deposit various coatings onto small test samples and bench level prototypes. This facility provides the foundation for...

Preparation and properties of antimony thin film anode materials

Institute of Scientific and Technical Information of China (English)

SU Shufa; CAO Gaoshao; ZHAO Xinbing

2004-01-01

Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

Charge-carrier transport and recombination in heteroepitaxial CdTe

International Nuclear Information System (INIS)

Kuciauskas, Darius; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

2014-01-01

We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm 2 (Vs) −1 and diffusion coefficient D of 17 cm 2  s −1 . We find limiting recombination at the epitaxial film surface (surface recombination velocity S surface  = (2.8 ± 0.3) × 10 5  cm s −1 ) and at the heteroepitaxial interface (interface recombination velocity S interface  = (4.8 ± 0.5) × 10 5  cm s −1 ). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

Engineering of Metal Microstructures; Process-Microstructure-Property Relationships for Electrodeposits

DEFF Research Database (Denmark)

Jensen, Jens Dahl

2002-01-01

and concentration of additives, current density, and mass transport. The grown films were analysed by a variety of characterisation techniques - including optical light microscopy, electron microscopy, atomic force microscopy, X-ray diffraction, thin film tensile testing, and nano-indentation. Studies of anomalous...... introduced in the deposits with the use of sodium-saccharin, which led to embrittlement of the deposits. By using ultrasonic streaming near the cathode during electrodeposition in the Watts type electrolyte, improved material distribution in machined 3-dimensional groove geometries was observed...

High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah

2018-05-08

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Characterization of thin CeO{sub 2} films electrochemically deposited on HOPG

Energy Technology Data Exchange (ETDEWEB)

Faisal, Firas [Lehrstuhl für Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany); Toghan, Arafat, E-mail: arafat.toghan@yahoo.com [Lehrstuhl für Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany); Chemistry Department, Faculty of Science, South Valley University, 83523 Qena (Egypt); Khalakhan, Ivan; Vorokhta, Mykhailo; Matolin, Vladimír [Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 747/2, 180 00 Prague 8 (Czech Republic); Libuda, Jörg [Lehrstuhl für Physikalische Chemie II, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany); Erlangen Catalysis Resource Center, Friedrich-Alexander-Universität Erlangen-Nürnberg, Egerlandstrasse 3, 91058 Erlangen (Germany)

2015-09-30

Graphical abstract: - Highlights: • Preparation of proton exchange membrane fuel cells catalyst using electrochemical thin film deposition. • Electrodeposition thin films of CeO{sub 2} on HOPG substrates. • The samples were characterized by in-situ AFM and ex-situ XPS. • XPS results reveal that the electrochemically deposited cerium oxide films are stoichiometric. • Exposing the films to ambient air, cracking structures are formed. - Abstract: Electrodeposition is widely used for industrial applications to deposit thin films, coatings, and adhesion layers. Herein, CeO{sub 2} thin films were deposited on a highly oriented pyrolytic graphite (HOPG) substrate by cathodic electrodeposition. The influence of the deposition parameters on the yield and on the film morphology is studied and discussed. Morphology and composition of the electrodeposited films were characterized by in-situ atomic force microscopy (AFM), scanning electron microscopy (SEM), Energy Dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). By AFM we show that the thickness of CeO{sub 2} films can be controlled via the Ce{sup 3+} concentration in solution and the deposition time. After exposing the films to ambient air, cracking structures are formed, which were analyzed by AFM in detail. The chemical composition of the deposits was analyzed by XPS indicating the formation of nearly stoichiometric CeO{sub 2}.

CdTe in photoconductive applications. Fast detector for metrology and X-ray imaging

International Nuclear Information System (INIS)

Cuzin, M.

1991-01-01

Operating as a photoconductor, the sensitivity and the impulse response of semi-insulating materials greatly depend on the excitation duration compared to electron and hole lifetimes. The requirement of ohmic contact is shortly discussed. Before developing picosecond measurements with integrated autocorrelation system, this paper explains high energy industrial tomographic application with large CdTe detectors (25x15x0.9 mm 3 ). The excitation is typically μs range. X-ray flash radiography, with 10 ns burst, is in an intermediate time domain where excitation is similar to electron life-time. In laser fusion experiment excitation is in the range of 50 ps and we develop photoconductive devices able to study very high speed X-ray emission time behaviour. Thin polycristalline MOCVD CdTe films with picosecond response are suitable to perform optical correlation measurements of single shot pulses with a very large bandwidth (- 50 GHz)

Studies of antimony telluride and copper telluride films electrodeposition from choline chloride containing ionic liquids

Energy Technology Data Exchange (ETDEWEB)

Catrangiu, Adriana-Simona; Sin, Ion [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Prioteasa, Paula [INCDIE ICPE-Advanced Research, Splaiul Unirii 313, Bucharest (Romania); Cotarta, Adina [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Cojocaru, Anca, E-mail: a_cojocaru@chim.upb.ro [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania); Anicai, Liana [Center of Surface Science and Nanotechnology, University POLITEHNICA of Bucharest, Splaiul Independentei 313, Bucharest (Romania); Visan, Teodor [Department of Inorganic Chemistry, Physical Chemistry and Electrochemistry, POLITEHNICA University of Bucharest, Calea Grivitei 132, Bucharest (Romania)

2016-07-29

Cyclic voltammetry and electrochemical impedance spectroscopy were used to investigate the deposition of antimony telluride or copper telluride from ionic liquid consisting in mixture of choline chloride with oxalic acid. In addition, the cathodic process during copper telluride formation was studied in the mixture of choline chloride with ethylene glycol. The results indicate that the Pt electrode is first covered with a Te layer, and then the more negative polarisation leads to the deposition of Sb{sub x}Te{sub y} or Cu{sub x}Te{sub y} semiconductor compounds. Thin films were deposited on copper and carbon steel at 60–70 °C and were characterised by scanning electron microscopy, energy X-ray dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Their stoichiometry depends on the bath composition and applied potential. EDS and XRD patterns indicate the possible synthesis of stoichiometric Sb{sub 2}Te{sub 3} phase and Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, and Cu{sub 2.8}Te{sub 2} phases, respectively, by controlling the ratio of ion concentrations in ionic liquid electrolytes and deposition potential. - Highlights: • Sb{sub x}Te{sub y} and Cu{sub x}Te{sub y} films electrodeposited from choline-chloride-based ionic liquids. • The stoichiometry of film depends on the bath composition and deposition potential. • Sb{sub 2}Te{sub 3}, Cu{sub 2}Te, Cu{sub 5}Te{sub 3}, Cu{sub 2.8}Te{sub 2} phases were identified in X-ray diffraction patterns.

Influence of co-electrodeposited Gold particles on the electrocatalytic properties of CoHCF thin films

International Nuclear Information System (INIS)

Kumar, Alam Venugopal Narendra; Joseph, James

2014-01-01

The electrochemical modification of solid electrodes with metal hexacyanoferrate thin films for enhancing the interfacial properties has created interest for over the past three decades. The preparation of Prussian blue (PB) Au nano composites for the enhancement in the electrocatalytic properties of PB on glassy carbon electrode has been reported by us. The incorporation of Au nano particles in Cobalt hexacyanoferrate (CoHCF) films on Glassy carbon by co-electrodeposition is expected to benefit its interfacial electron transfer properties. The present work describes the effect on the interfacial properties by incorporated Au particles in CoHCF (CoHCF(Au)) modified electrodes. The CoHCF(Au) modified electrodes were characterized by UV-Vis spectrophotometry, Cyclic Voltammetry, AC Impedance, FE-SEM etc., Influence on the electrocatalytic properties of CoHCF(Au) films have been explored by performing two important reactions i) Hydrazine elecrtro-oxidation ii) Oxygen evolution reaction. Our results reveal that CoHCF(Au) modified GC electrode perform better in terms of charge transport in the redox film and also for the electrooxidation of hydrazine in comparision with simple CoHCF modified electrodes. By using the current-transient technique (chrono method i vs t curve) the hydrazine diffusion coefficient (D 0 ) were calculated. Diffusion coefficient of hydrazine was approximately three times higher on CoHCF(Au) electrode, 9.5 × 10 −5 cm 2 s −1 compared with simple CoHCF modified electrode, 3.3× 10 −5 cm 2 s −1 . Similarly, we also discuss results which reveal that CoHCF(Au) electrodes enhances electrocatalytic activity in splitting water to oxygen in 0.1 M NaOH solution compared to simple CoHCF and Au deposited on GC electrodes

Electrodeposition of quaternary alloys in the presence of magnetic field

Science.gov (United States)

2010-01-01

Electrodeposition of Ni-Co-Fe-Zn alloys was done in a chloride ion solution with the presence and absence of a Permanent Parallel Magnetic Field (PPMF). The PPMF was applied parallel to the cathode surface. The deposition profile was monitored chronoamperometrically. It was found that the electrodeposition current was enhanced in the presence of PPMF (9 T) compared to without PPMF. The percentage of current enhancement (Γ%) was increased in the presence of PPMF, with results of Γ% = 11.9%, 16.7% and 18.5% at -1.1, -1.2 and -1.3 V respectively for a 2400 sec duration. In chronoamperometry, the Composition Reference Line (CRL) for Ni was around 57%, although the nobler metals (i.e. Ni, Co) showed anomalous behaviour in the presence of Zn and Fe. The anomalous behaviour of the Ni-Co-Fe-Zn electrodeposition was shown by the Energy Dispersive X-Ray (EDX) results. From Atomic Force Microscopy (AFM) measurements, it was found that the surface roughness of the Ni-Co-Fe-Zn alloy films decreased in the presence of a PPMF. PMID:20604934

Influence of Polycation Composition on Electrochemical Film Formation

Directory of Open Access Journals (Sweden)

Sabine Schneider

2018-04-01

Full Text Available The effect of polyelectrolyte composition on the electrodeposition onto platinum is investigated using a counterion switching approach. Film formation of preformed polyelectrolytes is triggered by oxidation of hexacyanoferrates(II (ferrocyanide, leading to polyelectrolyte complexes, which are physically crosslinked by hexacyanoferrate(III (ferricyanide ions due to preferential ferricyanide/polycation interactions. In this study, the electrodeposition of three different linear polyelectrolytes, namely quaternized poly[2-(dimethylaminoethyl methacrylate] (i.e., poly{[2-(methacryloyloxyethyl]trimethylammonium chloride}; PMOTAC, quaternized poly[2-(dimethylaminoethyl acrylate] (i.e., poly{[2-(acryloyloxyethyl]trimethylammonium chloride}; POTAC, quaternized poly[N-(3-dimethylaminopropylmethacrylamide] (i.e., poly{[3-(methacrylamidopropyl]trimethylammonium chloride}; PMAPTAC and different statistical copolymers of these polyelectrolytes with N-(3-aminopropylmethacrylamide (APMA, are studied. Hydrodynamic voltammetry utilizing a rotating ring disk electrode (RRDE shows the highest deposition efficiency DE for PMOTAC over PMAPTAC and over POTAC. Increasing incorporation of APMA weakens the preferred interaction of the quaternized units with the hexacyanoferrate(III ions. At a sufficient APMA content, electrodeposition can thus be prevented. Additional electrochemical quartz crystal microbalance measurements reveal the formation of rigid polyelectrolyte films being highly crosslinked by the hexacyanoferrate(III ions. Results indicate a different degree of water incorporation into these polyelectrolyte films. Hence, by adjusting the polycation composition, film properties can be tuned, while different chemistries can be incorporated into these electrodeposited thin hydrogel films.

Lithographically patterned electrodeposition of gold, silver, and nickel nanoring arrays with widely tunable near-infrared plasmonic resonances.

Science.gov (United States)

Halpern, Aaron R; Corn, Robert M

2013-02-26

A novel low-cost nanoring array fabrication method that combines the process of lithographically patterned nanoscale electrodeposition (LPNE) with colloidal lithography is described. Nanoring array fabrication was accomplished in three steps: (i) a thin (70 nm) sacrificial nickel or silver film was first vapor-deposited onto a plasma-etched packed colloidal monolayer; (ii) the polymer colloids were removed from the surface, a thin film of positive photoresist was applied, and a backside exposure of the photoresist was used to create a nanohole electrode array; (iii) this array of nanoscale cylindrical electrodes was then used for the electrodeposition of gold, silver, or nickel nanorings. Removal of the photoresist and sacrificial metal film yielded a nanoring array in which all of the nanoring dimensions were set independently: the inter-ring spacing was fixed by the colloidal radius, the radius of the nanorings was controlled by the plasma etching process, and the width of the nanorings was controlled by the electrodeposition process. A combination of scanning electron microscopy (SEM) measurements and Fourier transform near-infrared (FT-NIR) absorption spectroscopy were used to characterize the nanoring arrays. Nanoring arrays with radii from 200 to 400 nm exhibited a single strong NIR plasmonic resonance with an absorption maximum wavelength that varied linearly from 1.25 to 3.33 μm as predicted by a simple standing wave model linear antenna theory. This simple yet versatile nanoring array fabrication method was also used to electrodeposit concentric double gold nanoring arrays that exhibited multiple NIR plasmonic resonances.

Ablation of CdTe with 100 μs Nd:YAG laser pulses: dependence on target preparation method

International Nuclear Information System (INIS)

Rzeszutek, J.; Savchuk, V.; Oszwaldowski, M.

2008-01-01

The results of experimental studies of the ablation of CdTe with a pulsed Nd:YAG laser (wavelength 1064 nm) performed with 100 μs pulses and repetition time of 35 Hz are presented for the pulse energy range from 0.13 to 0.25 J. The main goal is to elucidate the dependence of the ablation process on the target preparation method. The investigation of the vapour stream intensity and chemical composition and their evolution with time are performed with a quadrupole mass spectrometer synchronized with the laser pulses. These studies are performed for three kinds of targets: a target made of CdTe bulk crystal (BC target), a target made of CdTe fine powder pressed under the pressure of 700 atm (PP target), and a target made of loose CdTe powder (N-PP target). The applicability of these targets for obtaining high quality CdTe thin films is determined. The best chemical composition of the vapour stream can be obtained with the BC target. A major drawback of this target is the energetic threshold for ablation with Nd:YAG laser and resulting delay in the ablation process above the threshold. The advantage of powder targets over BC target is the lack of any ablation threshold or delay. Weaker angular dependence of the particle emission (associated with the surface roughness), if confirmed in further experiments, can be the most important advantage of PP and N-PP targets. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural, morphological and magnetic characterization of electrodeposited Co–Fe–W alloys

Energy Technology Data Exchange (ETDEWEB)

Noce, R. Della, E-mail: rodrnoce@iq.unesp.br [Instituto de Química, Universidade Estadual Paulista, UNESP, 14800-900 Araraquara, SP (Brazil); Benedetti, A.V.; Magnani, M. [Instituto de Química, Universidade Estadual Paulista, UNESP, 14800-900 Araraquara, SP (Brazil); Passamani, E.C. [Departamento de Física, Universidade Federal do Espírito Santo, 29075-910 Vitória, ES (Brazil); Kumar, H.; Cornejo, D.R. [Instituto de Física, Universidade de São Paulo, USP, 05508-090 São Paulo, SP (Brazil); Ospina, C.A. [Electron Microscopy Laboratory, Brazilian Nanotechnology National Laboratory, 13083-970 Campinas, SP (Brazil)

2014-10-25

Highlights: • Small W additions (up to 9 at.%) to the Co{sub 35}Fe{sub 65} binary system. • Electrodeposited Co–Fe–W alloys characterization by XRD, SEM, TEM, Mössbauer spectroscopy and magnetic measurements. • Production of Co–Fe–W alloys with low values of coercivity and high saturation magnetization. • Potential materials for applications in magnetic devices such as read/write heads and hard disks. - Abstract: Structural, morphological and magnetic characterization of electrodeposited Co–Fe–W alloys, containing small amounts of W (up to 9 at.%), were performed using X-ray diffractometry, scanning (SEM) and transmission (TEM) electron microscopy, Mössbauer spectroscopy and magnetization measurements. Electrodeposited (Co{sub 100−x}Fe{sub x}){sub 100−y}W{sub y} films (x = 63–72 at.% Fe, y = 4–9 at.% W) were successfully produced varying the applied cathodic current density (i{sub c}) between 0.5 and 10 mA cm{sup −2}. X-ray diffraction results revealed a bcc-like structure for all studied compositions with average crystallite size ranging from 16 to 35 nm, as also confirmed by TEM results. SEM images indicated that needle-type morphology is dominant for the deposits containing lower W content (up to 4.5 at.%.), while a cauliflower-type behavior is observed for higher W content deposits. Room temperature Mössbauer spectra indicate the presence of two magnetic species for all samples; one component associated with an ordered Co–Fe–W fraction (crystalline grain core) and a magnetic disordered Co–Fe–W contribution, which can be attributed to the grain boundaries/grain surfaces. Magnetization was observed to be in the film plane along the film direction, except the sample prepared at i{sub c} = 10 mA cm{sup −2} that is slightly canted from in- to out-of-plane geometry. Magnetic measurements show high saturation magnetization values accompanied by low coercivity ones for the electrodeposited Co–Fe–W alloys, making these

Growth and analysis of micro and nano CdTe arrays for solar cell applications

Science.gov (United States)

Aguirre, Brandon Adrian

CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ˜20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 V through an increase in the carrier lifetime and concentration to tau >10 ns and p > 10 16 cm-3, respectively. However, the large lattice mismatch (10%) between CdTe and CdS and the polycrystalline nature of the CdTe film are the fundamental reasons for the high defect density and pose a difficult challenge to solve. In this work, a method to physically and electrically isolate the different kinds of defects at the nanoscale and understand their effect on the electrical performance of CdTe is presented. A SiO2 template with arrays of window openings was deposited between the CdTe and CdS to achieve selective-area growth of the CdTe via close-space sublimation. The diameter of the window openings was varied from the micro to the nanoscale to study the effect of size on nucleation, grain growth, and defect density. The resulting structures enabled the possibility to electrically isolate and individually probe micrometer and nanoscale sized CdTe/CdS cells. Electron back-scattered diffraction was used to observe grain orientation and defects in the miniature cells. Scanning and transmission electron microscopy was used to study the morphology, grain boundaries, grain orientation, defect structure, and strain in the layers. Finally, conducting atomic force microscopy was used to study the current-voltage characteristics of the solar cells. An

The effect of different component ratios in block polymers and processing conditions on electrodeposition efficiency onto titanium

Energy Technology Data Exchange (ETDEWEB)

Fukuhara, Yusuke; Kyuzo, Megumi [Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Tsutsumi, Yusuke [Institute of Biomaterials and Bioengineering, Tokyo Medical and Dental University, 2-3-10 Kanda-surugadai, Chiyoda-ku, Tokyo 101-0062 (Japan); Nagai, Akiko [Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Institute of Biomaterials and Bioengineering, Tokyo Medical and Dental University, 2-3-10 Kanda-surugadai, Chiyoda-ku, Tokyo 101-0062 (Japan); Chen, Peng [Institute of Biomaterials and Bioengineering, Tokyo Medical and Dental University, 2-3-10 Kanda-surugadai, Chiyoda-ku, Tokyo 101-0062 (Japan); Hanawa, Takao, E-mail: hanawa.met@tmd.ac.jp [Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Institute of Biomaterials and Bioengineering, Tokyo Medical and Dental University, 2-3-10 Kanda-surugadai, Chiyoda-ku, Tokyo 101-0062 (Japan)

2015-11-15

Graphical abstract: - Highlights: • MPC polymers with an ability of electrodeposition were synthesized. • MPC polymers were immobilized on titanium substrates by electrodeposition. • Immobilization by electrodeposition of MPC polymer decreased water contact angle and protein adsorption. • Length of MPC unit and electrodeposition time did not influence water contact angle and protein adsorption. - Abstract: 2-Methacryloyloxyethyl phosphorylcholine (MPC) polymers for electrodeposition to titanium surfaces were synthesized. The polymers were block-type copolymers composed of a poly(MPC) segment and a poly(2-aminoethylmethacrylate (AEMA)) segment, which could electronically adsorb to a titanium oxide film on the titanium surface. The polymer was synthesized as expected by nuclear magnetic resonance and gel permeation chromatography. In a 0.26 mmol L{sup −1} PMbA solution adjusted to pH 11, −3.0 V (vs. an Ag/AgCl electrode) was applied to a titanium substrate for 300 s. We evaluated the effects of the molecular structure of poly(MPC-block-AEMA) (PMbA) with a different polymerization degree of MPC unit, whereas the polymerization degree of the AEMA units was fixed. The 15-min electrodeposition of PMbA100 was the most efficient condition in this study. On the other hand, the results of the water contact angle and the amount of adsorbed protein did not change, even when altering the MPC unit number and electrodeposition time. This indicates that the immobilization by electrodeposition of PMbA is important for the inhibition of protein adsorption, while the polymerization degree of the MPC unit and the electrodeposition time do not influence them. This study will enhance the understanding of effective polymer structures for electrodeposition and electrodeposition conditions.

Cathodic electrochemical deposition of Magnéli phases TinO2n−1 thin films at different temperatures in acetonitrile solution

International Nuclear Information System (INIS)

Ertekin, Zeliha; Tamer, Uğur; Pekmez, Kadir

2015-01-01

Highlights: • TiO x films were prepared by cathodic electrodeposition in acetonitrile. • One-step electrodeposition of TiO x films without heat treatment process. • Different crystalline Ti n O 2n−1 films (γTi 3 O 5 , λTi 3 O 5 , Ti 4 O 7 , Ti 5 O 9 ) were obtained. - Abstract: The Magnéli phase titanium oxide films prepared by cathodic electrodeposition on indium–tin-oxide coated glass substrates from saturated peroxo-titanium solution in acetonitrile. Electrodeposited brownish semi-conductor thin films were identified via X-ray diffraction, Raman spectroscopy, UV–vis spectroscopy and scanning electron microscopy (SEM). The effects of different potentials and temperatures on the crystallinity of the thin films have been discussed. Ti 3 O 5 , Ti 4 O 7 and Ti 5 O 9 as the most favorable forms of the Ti n O 2n−1 were electrodeposited on ITO electrode at electrochemical deposition potentials and different temperatures. The present investigation reveals that the electrochemical deposition of crystalline Ti n O 2n−1 films by a simple one-step electrodeposition method (without any heat treatment) in acetonitrile solution is possible and very promising as a preparation method for electrochemical applications

Dielectric properties investigation of Cu2O/ZnO heterojunction thin films by electrodeposition

International Nuclear Information System (INIS)

Li, Qiang; Xu, Mengmeng; Fan, Huiqing; Wang, Hairong; Peng, Biaolin; Long, Changbai; Zhai, Yuchun

2013-01-01

Highlights: ► Bottom-up self-assembly Cu 2 O/ZnO heterojunction was fabricated by electrochemical deposition on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET). ► The dielectric response of Cu 2 O/ZnO heterojunction thin films had been investigated. ► The universal dielectric response was used to investigate the hopping behavior in Cu 2 O/ZnO heterojunction. -- Abstract: Structures and morphologies of the Cu 2 O/ZnO heterojunction electrodeposited on indium tin oxide (ITO) flexible substrate (polyethylene terephthalate-PET) were investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), high resolution transmission electron microscopy (HRTEM), respectively. The dielectric response of bottom-up self-assembly Cu 2 O/ZnO heterojunction was investigated. The low frequency dielectric dispersion (LFDD) was observed. The universal dielectric response (UDR) was used to investigate the frequency dependence of dielectric response for Cu 2 O/ZnO heterojunction, which was attributed to the long range and the short range hopping charge carriers at the low frequency and the high frequency region, respectively

Electrochemical performance of Sn-Sb-Cu film anodes prepared by layer-by-layer electrodeposition

International Nuclear Information System (INIS)

Jiang Qianlei; Xue Ruisheng; Jia Mengqiu

2012-01-01

A novel layer-by-layer electrodeposition and heat-treatment approach was attempted to obtain Sn-Sb-Cu film anode for lithium ion batteries. The preparation of Sn-Sb-Cu anodes started with galvanostatic electrochemically depositing antimony and tin sequentially on the substrate of copper foil collector. Sn-Sb and Cu-Sb alloys were formed when heated. The SEM analysis showed that the crystalline grains become bigger and the surface of the Sn-Sb-Cu anode becomes more denser after annealing. The energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analysis showed the antimony, tin and copper were alloyed to form SnSb and Cu 2 Sb after heat treatment. The X-ray photoelectron spectroscopy (XPS) analysis showed the surface of the Sn-Sb-Cu electrode was covered by a thin oxide layer. Electrochemical measurements showed that the annealed Sn-Sb-Cu anode has high reversible capacity and good capacity retention. It exhibited a reversible capacity of about 962 mAh/g in the initial cycle, which still remained 715 mAh/g after 30 cycles.

Effect of electrodeposition current density on the microstructure and the degradation of electroformed iron for degradable stents

Energy Technology Data Exchange (ETDEWEB)

Moravej, Maryam [Laboratory for Biomaterials and Bioengineering, Department of Mining, Metallurgy and Materials Engineering and University Hospital Research Center, Universite Laval, Quebec City, Que. G1V 0A6 (Canada); Department of Mining, Metallurgy and Materials Engineering, Pavillon Adrien-Pouliot, 1065 avenue de la Medecine, Local 1745-E, Universite Laval, Quebec City, Que. G1V 0A6 (Canada); Amira, Sofiene [Aluminium Technology Centre, Industrial Materials Institute, National Research Council Canada, 501, boul. de l' Universite Est, Saguenay, Que. G7H 8C3 (Canada); Prima, Frederic [Laboratory for Physical Metallurgy, Ecole Nationale Superieure de Chimie de Paris, Universite Pierre et Marie Curie, Paris 6 (France); Rahem, Ahmed [Aluminium Technology Centre, Industrial Materials Institute, National Research Council Canada, 501, boul. de l' Universite Est, Saguenay, Que. G7H 8C3 (Canada); Fiset, Michel [Department of Mining, Metallurgy and Materials Engineering, Pavillon Adrien-Pouliot, 1065 avenue de la Medecine, Local 1745-E, Universite Laval, Quebec City, Que. G1V 0A6 (Canada); and others

2011-12-15

Pure iron has become one of the most interesting candidate materials for degradable metallic stents due to its high mechanical properties and moderate degradation. In this work we studied the effect of electrodeposition current density on microstructure and degradation of pure iron films electrodeposited on Ti alloy substrate for degradable metallic stent application. Iron sheets were produced by electrodeposition using four different current densities 1, 2, 5 and 10 A dm{sup -2}. The films were then studied by SEM (scanning electron microscope) and EBSD (electron backscatter diffraction) to observe the surface morphology, grain size and orientation. Potentiodynamic polarization and static immersion tests were used to determine the corrosion rate and to study the degradation behavior of iron films, respectively. The current density was found to significantly influence the texture, the grain size and the grain shape of the electrodeposited iron. At current densities of 1, 5 and 10 A dm{sup -2}, weak textures corresponding to Left-Pointing-Angle-Bracket 1 0 1 Right-Pointing-Angle-Bracket , Left-Pointing-Angle-Bracket 1 1 1 Right-Pointing-Angle-Bracket and Left-Pointing-Angle-Bracket 1 1 2 Right-Pointing-Angle-Bracket in the normal (electrodeposition) direction were obtained, respectively. At these current densities, average grain sizes smaller than 3 {mu}m were also obtained. However, at 2 A dm{sup -2}, a strong Left-Pointing-Angle-Bracket 1 1 1 Right-Pointing-Angle-Bracket //ND texture with density of 7.4 MUD was obtained with larger average grain size of 4.4 {mu}m. The microstructure of iron samples changed after annealing at 550 Degree-Sign C because of the induced recrystallization. Different corrosion rates were obtained from potentiodynamic polarization curves of iron films deposited at different current densities because of their microstructures. Fe-2 showed the lowest corrosion rate due to its larger grains size and its texture. The corrosion rates of all

Electrodeposition of CoNiMo thin films using glycine as additive: anomalous and induced codeposition

International Nuclear Information System (INIS)

Esteves, Marcos C.; Sumodjo, Paulo T.A.; Podlaha, Elizabeth J.

2011-01-01

Highlights: → Mixed/induced codeposition of CoNiMo from a glycine containing bath. → Deposition in a rotating cylinder Hull cell. → The mechanism is explained in term of the complex species that can be formed. - Abstract: The present study focuses on the behavior of the CoNiMo mixed anomalous/induced codeposition process, using glycine as a probe to influence the coverage of adsorbed intermediates. In order to facilitate the investigation of a wide variation of parameters the electrodeposition of the alloy films was performed using a rotating cylinder Hull cell. Alloy composition, current efficiency and partial currents of each metal were analyzed. The partial current densities and hence alloy composition was affected by the amount of glycine in the electrolyte: increasing glycine enhanced both cobalt and molybdenum deposition rates and hindered nickel deposition. It is suggested that the glycine facilitates the adsorption of M(I) adsorbed intermediates that control the anomalous and induced codeposition behavior. The current efficiency ranged from 30 up to 75% and was only slightly affected by glycine at high applied current densities. Films with a tridimensional porous structure were obtained applying current densities higher than 200 mA cm -2 , formed as a consequence of the large hydrogen evolution side reaction, presenting conditions for a novel Mo-alloy electrode structure.

Diffusion and segregation of substrate copper in electrodeposited Ni-Fe thin films

International Nuclear Information System (INIS)

Ahadian, M.M.; Iraji zad, A.; Nouri, E.; Ranjbar, M.; Dolati, A.

2007-01-01

The Cu surface segregation is investigated in the electrodeposited Ni-Fe layers using X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and atomic force microscopy (AFM). The results indicate that Cu segregation and accumulation take place in areated and deareated baths and the amount of segregated copper increases after air exposure. This phenomenon is explained by lower interfacial tension of the Cu in comparison with Ni and Fe. Our results reveal more surface segregation in the electrodeposit than vacuum reported results. This should be due to interface charging and higher surface diffusion in applied potential. The effect of interface charging on the interfacial tension is discussed based on Lippmann equation. Increasing of the Cu accumulation after air exposure is related to selective oxidation in alloys and higher tendency of Cu to surface oxidation

Cyclic Voltammetric Study of High Speed Silver Electrodeposition and Dissolution in Low Cyanide Solutions

Directory of Open Access Journals (Sweden)

Bo Zheng

2016-01-01

Full Text Available The electrochemical processes in solutions with a much lower amount of free cyanide (<10 g/L KCN than the conventional alkaline silver electrolytes were first explored by using cyclic voltammetry. The electrochemical behavior and the effect of KAg(CN2, KCN, and KNO3 electrolytes and solution pH on the electrodeposition and dissolution processes were investigated. Moreover, suitable working conditions for high speed, low cyanide silver electrodeposition were also proposed. Both silver and cyanide ions concentration had significant effects on the electrode polarization and deposition rate. The onset potential of silver electrodeposition could be shifted to more positive values by using solutions containing higher silver and lower KCN concentration. Higher silver concentration also led to higher deposition rate. Besides maintaining high conductivity of the solution, KNO3 might help reduce the operating current density required for silver electrodeposition at high silver concentration albeit at the expense of slowing down the electrodeposition rate. The silver dissolution consists of a limiting step and the reaction rate depends on the amount of free cyanide ions. The surface and material characteristics of Ag films deposited by low cyanide solution are also compared with those deposited by conventional high cyanide solution.

Characterization and photoluminescence studies of CdTe ...

Indian Academy of Sciences (India)

Administrator

Abstract. The major objective of this work was to detect the change of photoluminescence (PL) intensity of. CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electro- spinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-.

The electrodeposition of multilayers on a polymeric substrate in flexible organic photovoltaic solar cells

Science.gov (United States)

Guedes, Andre F. S.; Guedes, Vilmar P.; Souza, Monica L.; Tartari, Simone; Cunha, Idaulo J.

2015-09-01

Flexible organic photovoltaic solar cells have drawn intense attention due to their advantages over competing solar cell technologies. The method utilized to deposit as well as to integrate solutions and processed materials, manufacturing organic solar cells by the Electrodeposition System, has been presented in this research. In addition, we have demonstrated a successful integration of a process for manufacturing the flexible organic solar cell prototype and we have discussed on the factors that make this process possible. The maximum process temperature was 120°C, which corresponds to the baking of the active polymeric layer. Moreover, the new process of the Electrodeposition of complementary active layer is based on the application of voltage versus time in order to obtain a homogeneous layer with thin film. This thin film was not only obtained by the electrodeposition of PANI-X1 on P3HT/PCBM Blend, but also prepared in perchloric acid solution. Furthermore, these flexible organic photovoltaic solar cells presented power conversion efficiency of 12% and the inclusion of the PANI-X1 layer reduced the effects of degradation on these organic photovoltaic panels induced by solar irradiation. Thus, in the Scanning Electron Microscopy (SEM), these studies have revealed that the surface of PANI-X1 layers is strongly conditioned by the dielectric surface morphology.

Preparation of n- and p-InP films by PH{sub 3} treatment of electrodeposited In layers

Energy Technology Data Exchange (ETDEWEB)

Cattarin, S.; Musiani, M. [C.N.R., Padova (Italy). Istituto di Polarografia ed Elettrochimica Preparativa; Casellato, U.; Rossetto, G. [C.N.R., Padova (Italy). Istituto di Chimica e Tecnologie Inorganische e dei Materiali Avanzati; Razzini, G. [Politecnico di Milano (Italy). Dipt. di Chimica Fisica Applicata; Decker, F.; Scrosati, B. [Univ. La Sapienza, Roma (Italy). Dipt. di Chimica

1995-04-01

InP is among the few semiconducting materials with the potential for excellence in several applications, including solar energy conversion. Thin InP layers have been prepared by electrodeposition of In films on Ti substrates (ca. 2 mg/cm{sup 2} of In) and their annealing in PH{sub 3} flow. The obtained material, characterized by scanning electron microscopy-energy dispersive X-ray analysis and X-ray diffraction techniques, shows uneven substrate coverage but good crystallinity. Photoelectrochemical investigations in acidic polyiodide medium show significant n-type photoactivity for the samples prepared from a nominally pure In layer. A p-type photoactivity is obtained depositing a small amount of Zn on top of the In layer prior to annealing. Results are compared with those obtained preparing InP layers on Ti by a conventional metallorganic chemical vapor deposition technique.

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.

2017-12-01

Cd-rich composition and group-V element doping are of interest for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe, but the critical details concerning point defects are not yet fully established. Herein, we report on the properties of arsenic doped CdTe single crystals grown from Cd solvent by the travelling heater method. The photoluminescence spectra and activation energy of 74 ± 2 meV derived from the temperature-dependent Hall effect are consistent with AsTe as the dominant acceptor. Doping in the 1016 to 1017/cm3 range is achieved for measured As concentrations between 1016 and 1020/cm3 with the highest doping efficiency of 40% occurring near 1017 As/cm3. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Additionally, quenching experiments reveal at least two mechanisms of increased p-type doping in the dark, one decaying over 2-3 weeks and the other persisting for at least 2 months. These results provide essential insights for the application of As-doped CdTe in thin film solar cells.

Hybrid coating on steel: ZnNi electrodeposition and surface modification with organothiols and diazonium salts

International Nuclear Information System (INIS)

Berger, Francois; Delhalle, Joseph; Mekhalif, Zineb

2008-01-01

Sacrificial electrodeposited ZnNi is currently studied for replacing chromate conversion coatings (CCC) in anticorrosion applications. The present-day performances of ZnNi are still away from those of CCCs and the additional organic layers such as polymers and paints are still permeable and cannot prevent the corrosive species to reach the metal. Suitable adhesion primers could improve the situation by minimizing the access of the corrosive species to the polymer/metal interface. As a contribution to this interface problem, the present work provides a comparison of the protective properties of two structurally related molecules (4-nitrothiophenol and 4-nitrobenzenediazonium) grafted on a ZnNi coating electrodeposited on steel. Films of 4-nitrophenyl have been prepared according to the self-assembly process while films of 4-nitrobenzene have been obtained by electrochemical grafting, n-dodecanethiol being used as model system. The adsorption of these molecules as well as the resulting organic film is characterized by X-ray photoelectron spectroscopy (XPS) and polarization modulation-infrared reflection absorption spectroscopy (PM-IRRAS). The protective properties of the organic films against corrosion are investigated by linear sweep voltammetry (LSV), cyclic voltammetry (CV) and scanning vibrating electrode technique (SVET)

Life cycle assessment and energy pay-back time of advanced photovoltaic modules: CdTe and CIS compared to poly-Si

International Nuclear Information System (INIS)

Raugei, Marco; Bargigli, Silvia; Ulgiati, Sergio

2007-01-01

The paper is concerned with the results of a thorough energy and life cycle assessment (LIA) of CdTe and CIS photovoltaic modules. The analysis is based on actual production data, making it one of the very first of its kind to be presented to the scientific community, and therefore especially worthy of attention as a preliminary indication of the future environmental impact that the up-scaling of thin film module production may entail. The analysis is consistent with the recommendations provided by ISO norms 14040 and updates, and makes use of an in-house developed multi-method impact assessment method named SUMMA, which includes resource demand indicators, energy efficiency indicators, and 'downstream' environmental impact indicators. A comparative framework is also provided, wherein electricity produced by thin film systems such as the ones under study is set up against electricity from poly-Si systems and the average European electricity mix. Results clearly show an overall very promising picture for thin film technologies, which are found to be characterised by favourable environmental impact indicators (with special reference to CdTe systems), in spite of their still comparatively lower efficiencies

Carrier Transport, Recombination, and the Effects of Grain Boundaries in Polycrystalline Cadmium Telluride Thin Films for Photovoltaics

Science.gov (United States)

Tuteja, Mohit

Cadmium Telluride (CdTe), a chalcogenide semiconductor, is currently used as the absorber layer in one of the highest efficiency thin film solar cell technologies. Current efficiency records are over 22%. In 2011, CdTe solar cells accounted for 8% of all solar cells installed. This is because, in part, CdTe has a low degradation rate, high optical absorption coefficient, and high tolerance to intrinsic defects. Solar cells based on polycrystalline CdTe exhibit a higher short-circuit current, fill factor, and power conversion efficiency than their single crystal counterparts. This is despite the fact that polycrystalline CdTe devices exhibit lower open-circuit voltages. This is contrary to the observation for silicon and III-V semiconductors, where material defects cause a dramatic drop in device performance. For example, grain boundaries in covalently-bonded semiconductors (a) act as carrier recombination centers, and (b) lead to localized energy states, causing carrier trapping. Despite significant research to date, the mechanism responsible for the superior current collection properties of polycrystalline CdTe solar cells has not been conclusively answered. This dissertation focuses on the macro-scale electronic band structure, and micro scale electronic properties of grains and grain boundaries in device-grade CdTe thin films to answer this open question. My research utilized a variety of experimental techniques. Samples were obtained from leading groups fabricating the material and devices. A CdCl 2 anneal is commonly performed as part of this fabrication and its effects were also investigated. Photoluminescence (PL) spectroscopy was employed to study the band structure and defect states in CdTe polycrystals. Cadmium vacancy- and chlorine-related states lead to carrier recombination, as in CdTe films grown by other methods. Comparing polycrystalline and single crystal CdTe, showed that the key to explaining the improved performance of polycrystalline CdTe does

Electrodeposited ZnIn{sub 2}S{sub 4} onto TiO{sub 2} thin films for semiconductor-sensitized photocatalytic and photoelectrochemical applications

Energy Technology Data Exchange (ETDEWEB)

Assaker, Ibtissem Ben, E-mail: ibtissem.ben-assaker@laposte.net [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l’Energie Technopole borj cedria, Bp 95, Hammamm lif 2050 (Tunisia); Gannouni, Mounir; Naceur, Jamila Ben [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l’Energie Technopole borj cedria, Bp 95, Hammamm lif 2050 (Tunisia); Almessiere, Munirah Abdullah; Al-Otaibi, Amal Lafy; Ghrib, Taher [Laboratory of Physical Alloys (LPA), College of Science, University of Dammam (Saudi Arabia); Shen, Shouwen [Advanced Analysis Unit, Technical Service Division Research & Development Center Saudi Aramco, Dhahran (Saudi Arabia); Chtourou, Radhouane [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l’Energie Technopole borj cedria, Bp 95, Hammamm lif 2050 (Tunisia)

2015-10-01

Graphical abstract: - Highlights: • ZnIn{sub 2}S{sub 4} thin films was grown using electrodeposition route onto TiO{sub 2}/ITO coated glass substrate. • Study of the heterostructure ZnIn{sub 2}S{sub 4}/TiO{sub 2} thin films. • Photocatalytic activity of ZnIn{sub 2}S{sub 4}/TiO{sub 2} heterostructure under visible light irradiation. • High performance of Photoelectrochemical properties in the presence of the junction ZnIn{sub 2}S{sub 4}/TiO{sub 2}. - Abstract: In this study, ZnIn{sub 2}S{sub 4}/TiO{sub 2} heterostructure was successfully synthesized on ITO-coated glass substrates via a facile two-step process from aqueous solution. First, TiO{sub 2} thin film was prepared by sol–gel and deposited onto ITO coated glass substrate by spin-coating method. Then the zinc indium sulfide semiconductor was fabricated via electrodeposition technique onto TiO{sub 2}/ITO coated glass electrode. The X-ray diffraction patterns confirm that the heterostructure is mixed of both Anatase TiO{sub 2} and Rhombohedric ZnIn{sub 2}S{sub 4}. The scanning electron microscopy (SEM) images show that the morphology change with the deposition of ZnIn{sub 2}S{sub 4} over TiO{sub 2} thin film and a total coverage of the electrode surface was obtained. Optical absorption spectroscopy study of ZnIn{sub 2}S{sub 4}/TiO{sub 2} heterostructure exhibits a remarkable red-shift compared to the TiO{sub 2} and ZnIn{sub 2}S{sub 4} achieve the best efficiency of visible light absorption. Therefore, it is expected to apply to visible-light photocatalysis and solar cells. To investigate the effect of the heterojunction on the photocatalytic activity of ZnIn{sub 2}S{sub 4}/TiO{sub 2} thin films, photodegradation of methylene blue in the presence of ZnIn{sub 2}S{sub 4} was performed. ZnIn{sub 2}S{sub 4}/TiO{sub 2} heterostructure exhibited strong photocatalytic activity, and the degradation of methylene blue eached 91% after irradiation only for 4 h. Also, the study of the photocurrent density produced

2010 ELECTRODEPOSITION GORDON RESEARCH CONFERENCE, AUGUST 1-6, 2010

Energy Technology Data Exchange (ETDEWEB)

Peter Searson

2010-08-06

The 2010 Gordon Conference on Electrodeposition will present cutting-edge research on electrodeposition with emphasis on (i) advances in basic science, (ii) developments in next-generation technologies, and (iii) new and emerging areas. The Conference will feature a wide range of topics, from atomic scale processes, nucleation and growth, thin film deposition, and electrocrystallization, to applications of electrodeposition in devices including microelectronics, solar energy, and power sources. The Conference will bring together investigators from a wide range of scientific disciplines, including chemical engineering, materials science and engineering, physics, and chemistry. The Conference will feature invited speakers at the forefront of the field, and a late-breaking news session that will provide the opportunity for graduate students, post-docs, and junior faculty to participate. The collegial atmosphere of this Conference, with scientific talks and poster sessions, as well as opportunities for informal gatherings in the afternoons and evenings, provides an avenue for scientists from different disciplines to discuss current issues and promotes cross-disciplinary collaborations in the various research areas represented. The Conference will be held at Colby-Sawyer College, located in the Mt. Kearsarge-Lake Sunapee Region of New Hampshire. The surrounding mountains, forests, and lakes provide a beautiful setting for this conference. The attendance is limited so early application is strongly advised.

Electrodeposition of epitaxial CdSe on (111) gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Cachet, H.; Cortes, R.; Froment, M. [Universite Pierre et Marie Curie, Paris (France). Phys. des Liquides et Electrochimie; Etcheberry, A. [Institut Lavoisier (IREM) UMR CNRS C0173, Universite de Versailles- St Quentin en Yvelynes, 45 Avenue des Etats Unis, 78035, Versailles (France)

2000-02-21

Epitaxial growth of CdSe has been achieved on GaAs(111) by electrodeposition from an aqueous electrolyte. The structure of the film corresponds to the cubic modification of CdSe. The quality of epitaxy has been investigated by reflection high energy electron diffraction, transmission electron microscopy and X-ray diffraction techniques. By XPS measurements the chemistry of the CdSe/GaAs interface and the composition of CdSe are determined. (orig.)

Interaction of porphyrins with CdTe quantum dots

International Nuclear Information System (INIS)

Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

2011-01-01

Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

The effect of excitons on CdTe solar cells

International Nuclear Information System (INIS)

Karazhanov, S. Zh.; Zhang, Y.; Mascarenhas, A.; Deb, S.

2000-01-01

Temperature and doping-level dependence of CdTe solar cells is investigated, taking into account the involvement of excitons on photocurrent transport. We show that the density of excitons in CdTe is comparable with that of minority carriers at doping levels ≥10 15 cm -3 . From the investigation of the dark-saturation current, we show that the product of electron and hole concentrations at equilibrium is several orders of magnitude more than the square of the intrinsic carrier concentration. With this assumption, we have studied the effect of excitons on CdTe solar cells, and the effect is negative. CdTe solar cell performance with excitons included agrees well with existing experimental results. (c) 2000 American Institute of Physics

Tuning the electrodeposition parameters of silver to yield micro/nano structures from room temperature protic ionic liquids

International Nuclear Information System (INIS)

Suryanto, Bryan H.R.; Gunawan, Christian A.; Lu Xunyu; Zhao Chuan

2012-01-01

Controlled electrodeposition of silver onto glassy carbon, gold and indium tin oxide-coated glass substrates has been achieved from three room temperature protic ionic liquids (PILs), ethylammonium nitrate, triethylammonium methylsulfonate, and bis(2-methoxyethyl)ammonium acetate. Cyclic voltammetric, chronoamperometric, together with microscopic and X-ray techniques reveal that micro/nanostructured Ag thin films of controlled morphology, size, density, and uniformity can be achieved by tuning the electrodeposition parameters such as potential, time, types of PILs, substrate materials, and ionic liquid viscosity by altering the water content. Chronoamperometric results provide direct evidence that electrodeposition of Ag in protic ionic liquids takes place through a progressive nucleation and diffusion-controlled 3D growth mechanism. The as prepared Ag micro/nanoparticles have been employed as electrocatalysts for oxygen reduction reaction and exhibit excellent catalytic activity. The study provides promise for using protic ionic liquids as alternative electrolytes to conventional aprotic ionic liquids for electrodeposition of metals and nanostructured electrocatalysts.

Concerted Electrodeposition and Alloying of Antimony on Indium Electrodes for Selective Formation of Crystalline Indium Antimonide.

Science.gov (United States)

Fahrenkrug, Eli; Rafson, Jessica; Lancaster, Mitchell; Maldonado, Stephen

2017-09-19

The direct preparation of crystalline indium antimonide (InSb) by the electrodeposition of antimony (Sb) onto indium (In) working electrodes has been demonstrated. When Sb is electrodeposited from dilute aqueous electrolytes containing dissolved Sb 2 O 3 , an alloying reaction is possible between Sb and In if any surface oxide films are first thoroughly removed from the electrode. The presented Raman spectra detail the interplay between the formation of crystalline InSb and the accumulation of Sb as either amorphous or crystalline aggregates on the electrode surface as a function of time, temperature, potential, and electrolyte composition. Electron and optical microscopies confirm that under a range of conditions, the preparation of a uniform and phase-pure InSb film is possible. The cumulative results highlight this methodology as a simple yet potent strategy for the synthesis of intermetallic compounds of interest.

Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

Energy Technology Data Exchange (ETDEWEB)

Zsurzsa, S., E-mail: zsurzsa.sandor@wigner.mta.hu; Péter, L.; Kiss, L.F.; Bakonyi, I.

2017-01-01

The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H{sub c}) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H{sub c}=H{sub co}+a/d{sup n} with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H{sub c}) and magnetoresistance. • H{sub c} depends on Co layer thickness according to H{sub c}=H{sub co}+a/d{sup n} with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

Science.gov (United States)

Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

2016-02-01

The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

Influence of water-soluble conjugated/non-conjugated polyelectrolytes on electrodeposition of nanostructured MnO{sub 2} film for supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Kim, Eun-Kyung; Shrestha, Nabeen K. [Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, Wonjoo [Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Defense Ammunitions, Daeduk College, Daejeon 305-715 (Korea, Republic of); Cai, Gangri, E-mail: caigangri@naver.com [Department of Applied Chemistry, TianJin University of Technology, Tianjin 300384 (China); Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of); Han, Sung-Hwan, E-mail: shhan@hanyang.ac.kr [Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of)

2015-04-01

Manganese dioxide (MnO{sub 2}) thin films are deposited electrochemically on an indium–tin-oxide (ITO) electrode using aqueous bath in presence of conjugated water soluble sulfonated polyaniline (SPAN) or a non-conjugated polyacrylic acid (PAA) polyelectrolyte surfactant. The surface morphology and nature of the electrodeposited MnO{sub 2} films are found to be influenced strongly by the amount and type of polyelectrolyte in the deposition bath. Increasing the SPAN concentration, a porous structure resulting from the reduction of voids between the MnO{sub 2} nano-flakes is obtained. In contrast, by increasing the PAA concentration, dense and spherical MnO{sub 2} nanostructures have been deposited. These results may be caused by initiation of different kinetics and orientation of nucleation of MnO{sub 2} deposits on ITO surface in presence of different types of polyelectrolytes. Cyclic voltammetry study of these films shows the supercapacitor behavior. The porous MnO{sub 2} films grown from the SPAN containing electrolyte demonstrates a specific capacitance of 368.53 F/g at scan rate of 10 mV/s, which is approximately 10 times higher (i.e., 30.29 F/g) than that of the spherical MnO{sub 2} dense films grown from PAA containing electrolyte. - Highlights: • Conjugated/non-conjugated polyelectrolytes were used in deposition of MnO{sub 2}. • The two kinds of MnO{sub 2} film showed entirely different morphology. • Conjugated polyelectrolyte worked as template and also affected the growth rate. • Non-conducting polyelectrolyte could work as template but hindered MnO{sub 2} growth. • The specific capacitance of MnO{sub 2}–S was 10 times higher than MnO{sub 2}–P.

Self-assembly with orthogonal-imposed stimuli to impart structure and confer magnetic function to electrodeposited hydrogels.

Science.gov (United States)

Li, Ying; Liu, Yi; Gao, Tieren; Zhang, Boce; Song, Yingying; Terrell, Jessica L; Barber, Nathan; Bentley, William E; Takeuchi, Ichiro; Payne, Gregory F; Wang, Qin

2015-05-20

A magnetic nanocomposite film with the capability of reversibly collecting functionalized magnetic particles was fabricated by simultaneously imposing two orthogonal stimuli (electrical and magnetic). We demonstrate that cathodic codeposition of chitosan and Fe3O4 nanoparticles while simultaneously applying a magnetic field during codeposition can (i) organize structure, (ii) confer magnetic properties, and (iii) yield magnetic films that can perform reversible collection/assembly functions. The magnetic field triggered the self-assembly of Fe3O4 nanoparticles into hierarchical "chains" and "fibers" in the chitosan film. For controlled magnetic properties, the Fe3O4-chitosan film was electrodeposited in the presence of various strength magnetic fields and different deposition times. The magnetic properties of the resulting films should enable broad applications in complex devices. As a proof of concept, we demonstrate the reversible capture and release of green fluorescent protein (EGFP)-conjugated magnetic microparticles by the magnetic chitosan film. Moreover, antibody-functionalized magnetic microparticles were applied to capture cells from a sample, and these cells were collected, analyzed, and released by the magnetic chitosan film, paving the way for applications such as reusable biosensor interfaces (e.g., for pathogen detection). To our knowledge, this is the first report to apply a magnetic field during the electrodeposition of a hydrogel to generate magnetic soft matter. Importantly, the simple, rapid, and reagentless fabrication methodologies demonstrated here are valuable features for creating a magnetic device interface.

Effect of the electrochemical technique on nanocrystalline ZnO electrodeposition, its structural, morphological and photoelectrochemical properties

Energy Technology Data Exchange (ETDEWEB)

Chettah, Hamdane; Abdi, Djamila, E-mail: naimadjam@hotmail.com

2013-06-30

This article reports the influence of the electrochemical technique on the electrodeposition of nanoscopic zinc oxide from aqueous mixed bath of zinc nitrate and potassium chloride at 70 °C onto fluorine doped tin oxide coated glass substrates. ZnO thin films were elaborated via cyclic voltamperometry and chronoamperometry techniques. This study shows structural and morphological differences in films deposited according to both methods. Thin and adherent films obtained via cyclic voltamperometry have been obtained after 100 cycles, and those obtained using the chronoampermetric method grown at potential of − 1 V vs. Ag/AgCl during 1 h. The structural characterisation of such films was performed using X-ray diffraction, which showed the most important peaks of ZnO wurtzite structure with preferential orientation along the (002) axis for deposits obtained via cyclic voltamperometry presenting nanometric grain sizes (42 nm). Atomic force microscopy was used to study surface morphology and estimate the surface roughness factor for two deposits. Photoelectrochemical study indicates that both kinds of films had n-type electrical conductivity and presents high photoanodic-generated currents. - Highlights: • Zinc oxide films were electrodeposited on fluorine doped tin oxide substrates at 70 °C. • Two electrochemical techniques were used cyclic voltamperometry and chronoamperometry. • X-ray diffraction showed the most important peaks of ZnO wurtzite structure. • Preferential orientation along the (002) axis for cyclic voltamperometry films. • Deposits had n-type electrical conductivity and high photoanodic-generated currents.

Se-Se isoelectronic centers in high purity CdTe

Energy Technology Data Exchange (ETDEWEB)

Najjar, Rita; Andre, Regis; Mariette, Henri [CEA-CNRS, Nanophysique et Semiconducteurs, Institut Neel, 25 rue des martyrs, 38042 Grenoble (France); Golnik, Andrzej; Kossacki, Piotr; Gaj, Jan A. [Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw (Poland)

2010-06-15

We evidence zero-dimensional exciton states trapped on isoelectronic Se centers in CdTe quantum wells, {delta}-doped with Se. Thanks to special precautions taken to have very high purity CdTe heterostructures, it is possible to observe, in photoluminescence spectra, sharp discrete lines arising from individual centers related to the Se doping. These emission lines appear at about 40 meV below the CdTe band gap energy. The most prominent lines are attributed to the recombination of excitons bound to nearest-neighbor selenium pairs in a tetrahedral CdTe environment. This assignment is confirmed by a common linear polarization direction of the emitted light, parallel to <110>. These excitons localized on individual isoelectronic traps are good candidates as single photon emitters (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Influence of EDTA2− on the hydrothermal synthesis of CdTe nanocrystallites

International Nuclear Information System (INIS)

Gong Haibo; Hao Xiaopeng; Wu Yongzhong; Cao Bingqiang; Xu Hongyan; Xu Xiangang

2011-01-01

Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd 2+ . Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA 2− . Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: ► EDTA serves as a strong ligand with Cd 2+ . ► The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. ► With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. ► Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

International Nuclear Information System (INIS)

Fedorenko, Y. G.; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

2015-01-01

By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe

Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

Energy Technology Data Exchange (ETDEWEB)

Fedorenko, Y. G., E-mail: y.fedorenko@liverpool.ac.uk; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K. [Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF (United Kingdom)

2015-10-28

By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

CdTe and graphene co-sensitized TiO2 nanotube array photoanodes for protection of 304SS under visible light

International Nuclear Information System (INIS)

Li, Hong; Wang, Xiutong; Hou, Baorong; Zhang, Liang

2015-01-01

CdTe/graphene/TiO 2 films that served as photoanodes for cathodic protection application were prepared by an electrochemical deposition method. The deposition of graphene and CdTe nanoparticles (NPs) on the surface of the TiO 2 nanotubes was confirmed by scanning electron microscope and transmission electron microscopy. The composites exhibited high light absorption in both the UV and visible light region. The results indicated that TiO 2 nanotube photoelectrodes sensitized by 20-cycle graphene and 30-cycle CdTe NPs exhibited effective photocathodic protection properties for 304 stainless steel (304SS) under the visible-light illumination, with an photopotential of −750 mV versus saturated calomel electrode and a current density of 560 μA cm −2 . Due to the efficient photogenerated charge separation, the three-component CdTe/graphene/TiO 2 showed stronger photoresponse than pure TiO 2 under visible-light illumination. In summary, the CdTe/graphene could improve the photocathodic protection properties of TiO 2 films. (paper)

Cu and Cu2O films with semi-spherical particles grown by electrochemical deposition

International Nuclear Information System (INIS)

Zheng, Jin You; Jadhav, Abhijit P.; Song, Guang; Kim, Chang Woo; Kang, Young Soo

2012-01-01

Cu and Cu 2 O films can be prepared on indium-doped tin oxide glass substrates by simple electrodeposition in a solution containing 0.1 M Cu(NO 3 ) 2 and 3 M lactic acid at different pH values. At low pH (pH = 1.2), the uniform Cu films were obtained; when pH ≥ 7, the pure Cu 2 O films can be deposited. Especially, at pH = 11, the deposited Cu 2 O films exhibited cubic surface morphology exposing mainly {100} plane; in contrast, the films consisting of semi-spherical particles were obtained when the solution was being stirred for 2 weeks prior to use. The possible growth process and mechanism were comparatively discussed. - Highlights: ► Cu and Cu 2 O films were prepared by facile electrodeposition. ► Electrodeposition was preformed in electrolyte at different pH values. ► Dendritic Cu films were obtained at 1.2 pH with relatively high deposition potential. ► Semi-spherical Cu 2 O films were obtained with solution at 11 pH and stirred for 2 weeks. ► The possible growth mechanism of semi-spherical Cu 2 O films was discussed.

Nanocrystalline CdTe thin films by electrochemical synthesis

Directory of Open Access Journals (Sweden)

Ramesh S. Kapadnis

2013-03-01

Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

Band structure of CdTe under high pressure

International Nuclear Information System (INIS)

Jayam, Sr. Gerardin; Nirmala Louis, C.; Amalraj, A.

2005-01-01

The band structures and density of states of cadmium telluride (CdTe) under various pressures ranging from normal to 4.5 Mbar are obtained. The electronic band structure at normal pressure of CdTe (ZnS structure) is analyzed and the direct band gap value is found to be 1.654 eV. CdTe becomes metal and superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The equilibrium lattice constant, bulk modulus and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(E F )) gets enhanced after metallization, which leads to the superconductivity in CdTe. In our calculation, the metallization pressure (P M = 1.935 Mbar) and the corresponding reduced volume ((V/V 0 ) M = 0.458) are estimated. Metallization occurs via direct closing of band gap at Γ point. (author)

Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

International Nuclear Information System (INIS)

Lajnef, M.; Chtourou, R.; Ezzaouia, H.

2010-01-01

GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) techniques by the way of Al/GaAs Schottky junctions. The electric analysis allowed us to determine the n factor and the barrier height φ b0 parameters of Al/GaAs Schottky junctions. The (C-V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.

Effects of substrate temperature and post-deposition anneal on properties of evaporated cadmium telluride films

International Nuclear Information System (INIS)

Bacaksiz, E.; Basol, B.M.; Altunbas, M.; Novruzov, V.; Yanmaz, E.; Nezir, S.

2007-01-01

The effects of substrate temperature and post-deposition heat treatment steps on the morphology, structural, optical and electrical properties of thin film CdTe layers grown by vacuum evaporation were investigated. Scanning electron microscopy and X-ray diffraction (XRD) techniques were employed to study the structural changes. It was observed that the grain sizes and morphologies of as-deposited layers were similar for substrate temperatures of - 173 deg. C and - 73 deg. C. However, CdTe films produced at a substrate temperature of 27 deg. C had substantially larger grain size and clearly facetted morphology. Annealing at 200-400 deg. C in air did not cause any appreciable grain growth in any of the films irrespective of their growth temperature. However, annealing at 400 deg. C reduced faceting in all cases and initiated fusing between grains. XRD studies showed that this behavior after annealing at 400 deg. C coincided with an onset of a degree of randomization in the originally strong (111) texture of the as-grown layers. Optical band gap measurements showed sharpening of the band-edge upon annealing at 400 deg. C and a band gap value in the range of 1.46-1.49 eV. Resistivity measurements indicated that annealing at 400 deg. C in air forms a highly resistive compensated CdTe film. All results point to 400 deg. C to be a critical annealing temperature at which optical, structural and electrical properties of CdTe layers start to change

Synthesis and characterization of CdTe quantum dots by one-step method

Directory of Open Access Journals (Sweden)

H. Li

2013-09-01

Full Text Available L-Cysteine (Cys-capped CdTe quantum dots (QDs were prepared when sodium tellurite worked as a tellurium source and sodium borohydride acted as a reductant. The influences of various experimental variables, including pH values, Cd/Te and Cd/Cys molar ratios, on the photoluminescence (PL quantum yield (QY of the obtained CdTe QDs have been systematically investigated. Experimental results indicated that green to red emitting CdTe QDs with maximum quantum yield of 19.4% can be prepared at pH 11.5 and n(Cd2+:n(Te2−:n(Cys = 1:0.07:2.0. X-Ray powder diffraction (XRD and transmission electron microscopy (TEM were used to characterize the crystal structure and shape of CdTe QDs. The results showed that the prepared CdTe QDs were of cubic zinc blend crystal structure in a sphere-like shape.DOI: http://dx.doi.org/10.4314/bcse.v27i3.7

Spin dynamics in bulk CdTe at room temperature

International Nuclear Information System (INIS)

Nahalkova, P.; Nemec, P.; Sprinzl, D.; Belas, E.; Horodysky, P.; Franc, J.; Hlidek, P.; Maly, P.

2006-01-01

In this paper, we report on the room temperature dynamics of spin-polarized carriers in undoped bulk CdTe. Platelets of CdTe with different concentration of preparation-induced dislocations were prepared by combining the mechanical polishing and chemical etching. Using the polarization-resolved pump-probe experiment in transmission geometry, we have observed a systematic decrease of both the signal polarization and the electron spin dephasing time (from 52 to 36 ps) with the increased concentration of defects. We have suggested that the Elliot-Yafet mechanism might be the dominant spin dephasing mechanism in platelets of CdTe at room temperature

In situ electrodeposition of CoP nanoparticles on carbon nanomaterial doped polyphenylene sulfide flexible electrode for electrochemical hydrogen evolution

Science.gov (United States)

Wang, Tingxia; Jiang, Yimin; Zhou, Yaxin; Du, Yongling; Wang, Chunming

2018-06-01

Active and durable electrocatalyst for hydrogen evolution reaction (HER) is pivotal to generate molecular hydrogen more energy-efficient, but directly grafting electrocatalyst on electrode material by a single-step method without compromising the catalytic activity and stability remains a challenge. Herein, an intriguing electrode, reduced graphene oxide modified carbon nanotube/reduced graphene oxide/polyphenylene sulfide (RGO-CNT/RGO/PPS) film, is used to replace conventional electrodes. In situ electrodeposition is proposed to fabricate CoP on the RGO-CNT/RGO/PPS (CoP-RGO-CNT/RGO/PPS) electrode and achieves a favorably electrical contact between CoP nanoparticles and RGO-CNT/RGO/PPS electrode due to without any polymer binder. Additionally, the coupling of different electrodeposition stages with scanning electron microscope (SEM) can investigate the nanostructure evolution of CoP nanoparticles, which gives valuable insights into the optimized electrodeposition cycles. The rational integration of RGO onto CNT/RGO/PPS film is an effective approach for enhancing its intrinsic electrical conductivity and favoring the formation of a high density of dispersive CoP nanoparticles. The CoP-RGO-CNT/RGO/PPS film has shown outstanding HER electrocatalytic behaviors performed a current density of 10 mA cm-2 at a relatively low overpotential of 160 mV with a Tafel slope of 60 mV dec-1 in acidic medium, which can be mainly attributed to the synergistic effect between optimized morphology and accelerated kinetics. Additionally, this film electrocatalyst exhibits a good HER activity and stability under both neutral and basic conditions.

A facile route to shape controlled CdTe nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R. [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, Empangeni, KZN (South Africa); Revaprasadu, Neerish, E-mail: nrevapra@pan.uzulu.ac.za [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, Empangeni, KZN (South Africa)

2011-04-15

Research highlights: {yields} A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. {yields} This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. {yields} The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

A facile route to shape controlled CdTe nanoparticles

International Nuclear Information System (INIS)

Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R.; Revaprasadu, Neerish

2011-01-01

Research highlights: → A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. → This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. → The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

Electrodeposition and properties of Zn, Cu, and Cu{sub 1−x} Zn{sub x} thin films

Energy Technology Data Exchange (ETDEWEB)

Özdemir, Rasim [Kilis Vocational High School, Kilis 7 Aralık University, 79000 Kilis (Turkey); Karahan, İsmail Hakkı, E-mail: ihkarahan@gmail.com [Department of Metallurgical and Materials Engineering, Faculty of Technology, Mustafa Kemal University, 31040 Hatay (Turkey)

2014-11-01

Highlights: • Cu, Zn and Cu–Zn deposits successfully deposited from the non-cyanide sulphate electrolyte. • The effect of alloying element was investigated on the electrical resistivity and the structure of Cu–Zn alloy. • The average crystallite size of the samples varied from 66 to 161 nm and decreased when the Zn and Cu combined in Cu–Zn. • Microstrain has been decreased with increasing crystallite size. • Electrical resistivity of alloy was obtained between the Zn and Cu films. - Abstract: The electrodeposition of Cu, Zn and Cu–Zn deposits from the non-cyanide Zn sulphate and Cu sulphate reduced by citrate at constant stirring speed has been investigated. The composition of the Cu–Zn bath was shown to influence the morphology, electrical resistivity, phase composition, and Cu and Zn content of the Cu–Zn deposits. Their structural and electrical properties have been investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDAX), cyclic voltammeter (CV) and current–voltage measurements against the temperature for electrical resistivity, respectively. XRD shows that Cu–Zn samples are polycrystalline phase. Resistivity results show that the copper film exhibits bigger residual resistivity than both the zinc and the Cu–Zn alloy. Theoretical calculations of the XRD peaks demonstrate that the average crystallite size of the Cu–Zn alloy decreased and microstrain increased when the Cu alloyed with zinc.

Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint

Energy Technology Data Exchange (ETDEWEB)

Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

2011-09-01

The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

Electrochemical preparation and characterization of CuInSe2 thin films for photovoltaic applications

International Nuclear Information System (INIS)

Guillen Arqueros, C.

1992-01-01

The objective of this work has been to investigate the electrodeposition as a low-cost, large-area fabrication process to obtain CuInSe 2 this films for efficient photovoltaic devices. this objective entails the elucidation of thin film deposition mechanism, the study of the fundamental properties of electrodeposited material, and also the modification of their physical and chemical parameters for photovoltaic applications. CuInSe 2 thin films have been successfully electrodeposited from a citric was characterized by compositional, structural, electrical, optical and electrochemical measurements, relating their properties with the preparation parameters and also studying the effect of various thermal and chemical treatments. The results showed post-deposition treatment are needed for optimizing these films for solar cells fabrication: first, an annealing in inert atmosphere at temperatures above 400 degrees celsius to obtain a high recrystallization in the chalcopyrite structure, and after a chemical etching in KCN solution to remove secondary phases of Cu x Se and Se which are frequently electrodeposited with the CuInSe 2 . The treated samples showed appropriate photovoltaic activity in a semiconductor-electrolite liquid junction. (author) 193 ref

Interaction and energy transfer studies between bovine serum albumin and CdTe quantum dots conjugates: CdTe QDs as energy acceptor probes.

Science.gov (United States)

Kotresh, M G; Inamdar, L S; Shivkumar, M A; Adarsh, K S; Jagatap, B N; Mulimani, B G; Advirao, G M; Inamdar, S R

2017-06-01

In this paper, a systematic investigation of the interaction of bovine serum albumin (BSA) with water-soluble CdTe quantum dots (QDs) of two different sizes capped with carboxylic thiols is presented based on steady-state and time-resolved fluorescence measurements. Efficient Förster resonance energy transfer (FRET) was observed to occur from BSA donor to CdTe acceptor as noted from reduction in the fluorescence of BSA and enhanced fluorescence from CdTe QDs. FRET parameters such as Förster distance, spectral overlap integral, FRET rate constant and efficiency were determined. The quenching of BSA fluorescence in aqueous solution observed in the presence of CdTe QDs infers that fluorescence resonance energy transfer is primarily responsible for the quenching phenomenon. Bimolecular quenching constant (k q ) determined at different temperatures and the time-resolved fluorescence data provide additional evidence for this. The binding stoichiometry and various thermodynamic parameters are evaluated by using the van 't Hoff equation. The analysis of the results suggests that the interaction between BSA and CdTe QDs is entropy driven and hydrophobic forces play a key role in the interaction. Binding of QDs significantly shortened the fluorescence lifetime of BSA which is one of the hallmarks of FRET. The effect of size of the QDs on the FRET parameters are discussed in the light of FRET parameters obtained. Copyright © 2016 John Wiley & Sons, Ltd.

Fiscal 1998 New Sunshine Program achievement report. Development for practical application of photovoltaic system - Development of thin-film solar cell manufacturing technology (Development of low-cost/large-area module manufacturing technology - Development of high-reliability CdS/CdTe solar cell module manufacturing technology); 1998 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu / tei cost daimenseki module seizo gijutsu kaihatsu (koshinraisei CdTe taiyo denchi module no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

Cost reduction for the above-named solar cells is the aim of this effort. On the basis of the results of past studies, a technology is established of fabricating a thin CdS film by subjecting a CdS film to organometal pyrolysis, and this brings about a decrease in photoabsorption loss in the range of waves shorter than 500nm and a decrease in in-film reflection loss for an increase in short-circuit current density. A proximity sublimation method is used for CdTe film fabrication, which improves on film quality and film adhesion. These efforts result in the achievement of a conversion efficiency of 16.0% which is the highest in the world. Studies are promoted in a process nearer to the ultimate form, and a 30cm times 60cm large CdTe solar cell is fabricated on the basis of a patterning technique, and the product attains a conversion efficiency of 9.8%. In fiscal 1998, studies center about the establishment of a film fabrication process for a medium-are substrate and about the enhancement of its conversion efficiency, and facilities capable of dealing with large-area substrates are introduced and operated. In a typical achievement, a CdTe solar cell is experimentally fabricated in a process which is wholly under normal pressure, and the product with an aperture area of 1376cm{sup 2} exhibits a conversion efficiency of 10.5% according to JQA (Japan Quality Assurance Organization). (NEDO)

Study of electrodeposition technique to prepare alpha-counting plates of uranium 233

International Nuclear Information System (INIS)

Mertzig, W.

1979-01-01

The electrodeposition technique to prepare alpha-counting plates of 233 U for its determination is presented. To determine the optimum conditions for plating 233 U the effects of such parameters as current density, pH of eletrotype, salt concentration, time of electrolysis and distance electrodes were studied. A carrier method was developed to attain a quantitative electrodeposition of 233 U from aqueous solutions into alpha counting paltes. A single and incremental addition of natural uranium and thorium as carrier were studied. All samples were prepared using a electrodeposition cell manufactured at the IPEN, especially for use in electroplating tracer actinides. This cell is made of a metal-lucite to contain the electrolyte, which bottom is a polished brass disk coated with a Ni film serving as the cathode. A Pt wire anode is fixed on the top of the cell. The electroplated samples were alpha-counted using a surface barrier detector. A recovery of more than 99% was obtained in specific conditions. The plating procedure produced deposits which were firmly distributed over the plate area. The method was applied to determine tracer amounts of 233 U from oxalate and nitrate solutions coming from chemical processing irradiated thorium. (Author) [pt

[Oxidative damage effects induced by CdTe quantum dots in mice].

Science.gov (United States)

Xie, G Y; Chen, W; Wang, Q K; Cheng, X R; Xu, J N; Huang, P L

2017-07-20

Objective: To investigate Oxidative damage effects induced by CdTe Quantum Dots (QDs) in mice. Methods: 40 ICR mice were randomly divided into 5 groups: one control group (normal saline) ; four CdTe QDs (exposed by intravenous injection of 0.2 ml of CdTe QDs at the concentration of 0、0.5、5.0、50.0 and 500.0 nmol/ml respectively) . After 24 h, the mice were decapitated and the blood was collected for serum biochemically indexes、hematology indexes, the activities of SOD、GSH-Px and the concentration of MDA were all detected. Results: The results showed in the four CdTe QDs exposure groups, the level of CRE、PLT and the concentration of MDA were all significantly lower than those of the control group ( P control group ( P <0.01) . Conclusion: It was suggested that CdTe QDs at 0.5 nmol/ml could induce Oxidative damage effects in mice.

Research Leading to High Throughput Processing of Thin-Film CdTe PV Module: Phase I Annual Report, October 2003 (Revised)

Energy Technology Data Exchange (ETDEWEB)

Powell, R. C.; Meyers, P. V.

2004-02-01

Work under this subcontract contributes to the overall manufacturing operation. During Phase I, average module efficiency on the line was improved from 7.1% to 7.9%, due primarily to increased photocurrent resulting from a decrease in CdS thickness. At the same time, production volume for commercial sale increased from 1.5 to 2.5 MW/yr. First Solar is committed to commercializing CdTe-based thin-film photovoltaics. This commercialization effort includes a major addition of floor space and equipment, as well as process improvements to achieve higher efficiency and greater durability. This report presents the results of Phase I of the subcontract entitled''Research Leading to High Throughput Processing of Thin-Film CdTe PV Modules.'' The subcontract supports several important aspects needed to begin high-volume manufacturing, including further development of the semiconductor deposition reactor, advancement of accelerated life testing methods and understanding, and improvements to th e environmental, health, and safety programs. Progress in the development of the semiconductor deposition reactor was made in several areas. First, a new style of vapor transport deposition distributor with simpler operational behavior and the potential for improved cross-web uniformity was demonstrated. Second, an improved CdS feed system that will improve down-web uniformity was developed. Third, the core of a numerical model of fluid and heat flow within the distributor was developed, including flow in a 3-component gas system at high temperature and low pressure and particle sublimation.

Controllable wettability and morphology of electrodeposited surfaces on zinc substrates

Energy Technology Data Exchange (ETDEWEB)

Zhang, Binyan; Lu, Shixiang, E-mail: shixianglu@bit.edu.cn; Xu, Wenguo, E-mail: wenguoxu60@bit.edu.cn; Cheng, Yuanyuan

2016-01-01

Graphical abstract: Superhydrophobic surfaces combining hierarchical micro/nanostructures were fabricated on zinc substrates by etching, electrodeposition of ZnO coatings and annealing. Such superhydrophobic surfaces offer possibilities for chemical, biological, electronic and microfluidic applications. - Highlights: • Superhydrophobic surface was fabricated via electrodeposition of ZnO and annealing. • The ZnO hierarchical micro/nanostructures contribute to the surface superhydrophobicity. • Surface wettability and morphology can be controlled by varying process conditions. • The anti-icing properties and reversible wetting behaviors of the ZnO coatings were studied. - Abstract: Superhydrophobic surfaces combining hierarchical micro/nanostructures were fabricated on zinc substrates by etching in hydrochloric acid solution, electrodeposition of ZnO coatings and subsequent thermal annealing. The optimal coatings were electrodeposited at −1.25 V for 900 s on the etched zinc substrates and then annealed at 200 °C for 60 min, which could achieve a maximum water contact angle of 170 ± 2° and an ultra-low sliding angle of approximately 0°. By conducting SEM and water CA analysis, we found that the morphology and wettability of prepared samples were controllable by the fabrication process. Interestingly, even without any additional modification, the samples prepared under different electrodeposition conditions (including Zn(CH{sub 3}COO){sub 2} concentration from 5 mM to 40 mM and deposition time from 300 s to 1500 s) exhibited superhydrophobic character. The influences of the Zn(CH{sub 3}COO){sub 2} concentration, deposition time, annealing temperature and annealing time on the wetting behaviors were also discussed in detail. Such superhydrophobic surfaces possess long-term stability, and good corrosion resistance as well as self-cleaning ability. In addition, the anti-icing properties of the ZnO films were investigated. These surfaces could be rapidly and

Controllable wettability and morphology of electrodeposited surfaces on zinc substrates

International Nuclear Information System (INIS)

Zhang, Binyan; Lu, Shixiang; Xu, Wenguo; Cheng, Yuanyuan

2016-01-01

Graphical abstract: Superhydrophobic surfaces combining hierarchical micro/nanostructures were fabricated on zinc substrates by etching, electrodeposition of ZnO coatings and annealing. Such superhydrophobic surfaces offer possibilities for chemical, biological, electronic and microfluidic applications. - Highlights: • Superhydrophobic surface was fabricated via electrodeposition of ZnO and annealing. • The ZnO hierarchical micro/nanostructures contribute to the surface superhydrophobicity. • Surface wettability and morphology can be controlled by varying process conditions. • The anti-icing properties and reversible wetting behaviors of the ZnO coatings were studied. - Abstract: Superhydrophobic surfaces combining hierarchical micro/nanostructures were fabricated on zinc substrates by etching in hydrochloric acid solution, electrodeposition of ZnO coatings and subsequent thermal annealing. The optimal coatings were electrodeposited at −1.25 V for 900 s on the etched zinc substrates and then annealed at 200 °C for 60 min, which could achieve a maximum water contact angle of 170 ± 2° and an ultra-low sliding angle of approximately 0°. By conducting SEM and water CA analysis, we found that the morphology and wettability of prepared samples were controllable by the fabrication process. Interestingly, even without any additional modification, the samples prepared under different electrodeposition conditions (including Zn(CH_3COO)_2 concentration from 5 mM to 40 mM and deposition time from 300 s to 1500 s) exhibited superhydrophobic character. The influences of the Zn(CH_3COO)_2 concentration, deposition time, annealing temperature and annealing time on the wetting behaviors were also discussed in detail. Such superhydrophobic surfaces possess long-term stability, and good corrosion resistance as well as self-cleaning ability. In addition, the anti-icing properties of the ZnO films were investigated. These surfaces could be rapidly and reversibly switched

Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

International Nuclear Information System (INIS)

Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong

2015-01-01

Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd 2+ . Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals

Development and studies of Cd_1_−_xMg_xTe thin films with varying band gaps to understand the Mg incorporation and the related material properties

International Nuclear Information System (INIS)

Palomera, Roger C.; Martínez, Omar S.; Pantoja-Enriquez, J.; Mathews, N.R.; Reyes-Banda, Martín G.; Krishnan, B.; Mathew, X.

2017-01-01

Highlights: • Cd_1_−_xMg_xTe films with band gap in the range 1.47–2.41 eV is obtained. • Cd substitution by Mg was confirmed with SIMS and XPS analysis. • Cd_1_−_xMg_xTe films maintained CdTe structural features but with higher band gap. • Mg incorporation in CdTe inhibited grain growth. - Abstract: In this paper we report a systematic work involving the development of Cd_1_−_xMg_xTe thin films by co-evaporation of CdTe and Mg. The evaporation rate of both materials were adjusted to obtain ternary films of varying stoichiometry and hence the band gap. We have deposited films with band gap ranging from 1.47 to 2.41 eV. The films were characterized for structural, morphological, optical, opto-electronic, and spectroscopic properties. The film stoichiometry was studied across the thickness using SIMS data. SEM images showed that the grain size has a dependence on Mg content in the film, which inhibits the grain growth. The structural parameters showed a systematic dependence on Mg content in the film, however, there was no noticeable change in the XRD reflections with respect that of pure CdTe for lower concentrations of Mg. XPS analysis shed light on the incorporation of Mg further supporting the band gap variations observed with the UV–Vis spectroscopic studies. The photoresponse of the film was affected by Mg incorporation. Prototype devices of the type Cd_1_−_XMg_xTe/CdS were fabricated and the results are discussed.

Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

Energy Technology Data Exchange (ETDEWEB)

Lajnef, M., E-mail: Mohamed.lajnef@yahoo.fr [Laboratoire de Photovoltaique et de Semi-conducteurs, Centre de Recherche et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia); Chtourou, R.; Ezzaouia, H. [Laboratoire de Photovoltaique et de Semi-conducteurs, Centre de Recherche et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

2010-03-01

GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) techniques by the way of Al/GaAs Schottky junctions. The electric analysis allowed us to determine the n factor and the barrier height {phi}{sub b0} parameters of Al/GaAs Schottky junctions. The (C-V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.

Advanced Processing of CdTe- and CuInxGa1-xSe2-Based Solar Cells: Final Report: 18 April 1995 - 31 May 1998

International Nuclear Information System (INIS)

Jayapalan, A.; Tetali, B.; Ferekides, C.S.; Marinskiy, D.; Morel, D.L.; Lin, H.; Sankaranarayanan, H.; Bhatt, R.; Narayanaswamy, R.; Prabhakaran, R.; Marinskaya, S.; Zafar, S.

1999-01-01

This report summarizes work performed by the University of South Florida Department of Electrical Engineering under this subcontract. The Cadmium telluride(CdTe) portion of this project deals with the development of high-efficiency thin-filmed CdTe solar cells using fabrication techniques that are suitable for manufacturing environments

Functionalization of monolithic and porous three-dimensional graphene by one-step chitosan electrodeposition for enzymatic biosensor.

Science.gov (United States)

Liu, Jiyang; Wang, Xiaohui; Wang, Tianshu; Li, Dan; Xi, Fengna; Wang, Jin; Wang, Erkang

2014-11-26

Biological modification of monolithic and porous 3D graphene is of great significance for extending its application in fabricating highly sensitive biosensors. The present work reports on the first biofunctionalization of monolithic and freestanding 3D graphene foam for one-step preparation of reagentless enzymatic biosensors by controllable chitosan (CS) electrodeposition technology. Using a homogeneous three-component electrodeposition solution containing a ferrocene (Fc) grafted CS hybrid (Fc-CS), glucose oxidase (GOD), and single-walled carbon nanotubes (SWNTs), a homogeneous biocomposite film of Fc-CS/SWNTs/GOD was immobilized on the surface of 3D graphene foam by one-step electrodeposition. The Fc groups grafted on chitosan can be stably immobilized on the 3D graphene surface and keep their original electrochemical activity. The SWNTs doped into the Fc-CS matrix act as a nanowire to facilitate electron transfer and improve the conductivity of the biocomposite film. Combined with the extraordinary properties of 3D graphene foam including large active surface area, high conductivity, and fast mass transport dynamics, the 3D graphene based enzymatic biosensor achieved a large linear range (5.0 μM to 19.8 mM), a low detection limit (1.2 μM), and rapid response (reaching the 95% steady-state response within 8 s) for reagentless detection of glucose in the phosphate buffer solution.

Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

Directory of Open Access Journals (Sweden)

Alaa Ayad Al-mebir

2016-01-01

Full Text Available An in situ thermal annealing process (iTAP has been introduced before the common ex situ cadmium chloride (CdCl2 annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

Architectural Growth of Cu Nanoparticles Through Electrodeposition

Directory of Open Access Journals (Sweden)

Cheng Ching-Yuan

2009-01-01

Full Text Available Abstract Cu particles with different architectures such as pyramid, cube, and multipod have been successfully fabricated on the surface of Au films, which is the polycrystalline Au substrate with (111 domains, using the electrodeposition technique in the presence of the surface-capping reagents of dodecylbenzene sulfonic acid and poly(vinylpyrrolidone. Further, the growth evolution of pyramidal Cu nanoparticles was observed for the first time. We believe that our method might open new possibilities for fabricating nanomaterials of non-noble transition metals with various novel architectures, which can then potentially be utilized in applications such as biosensors, catalysis, photovoltaic cells, and electronic nanodevices.

A hydroxylamine electrochemical sensor based on electrodeposition of porous ZnO nanofilms onto carbon nanotubes films modified electrode

Energy Technology Data Exchange (ETDEWEB)

Zhang Cuihong; Wang Guangfeng; Liu Min; Feng Yuehua; Zhang Zhidan [College of Chemistry and Materials Science, Anhui Key Laboratory of Chem-Biosensing, Beijing East Road No. 1, Anhui Normal University, Anhui, Wuhu 241000 (China); Fang Bin, E-mail: binfang_47@yahoo.com.c [College of Chemistry and Materials Science, Anhui Key Laboratory of Chem-Biosensing, Beijing East Road No. 1, Anhui Normal University, Anhui, Wuhu 241000 (China)

2010-03-01

A novel route (electrodeposition) for the fabrication of porous ZnO nanofilms attached multi-walled carbon nanotubes (MWCNTs) modified glassy carbon electrodes (GCEs) was proposed. The morphological characterization of ZnO/MWCNT films was examined by scanning electron microscopy (SEM) and X-ray powder diffraction (XRD). The performances of the ZnO/MWCNTs/GCE were characterized with cyclic voltammetry (CV), Nyquist plot (EIS) and typical amperometric response (i-t). The potential utility of electrodes constructed was demonstrated by applying them to the analytical determination of hydroxylamine concentration. An optimized limit of detection of 0.12 muM was obtained at a signal-to-noise ratio of 3 and with a fast response time (within 3 s). Additionally, the ZnO/MWCNTs/GCE exhibited a wide linear range from 0.4 to 1.9 x 10{sup 4} muM and higher sensitivity. The ease of fabrication, high stability, and low cost of the modified electrode are the promising features of the proposed sensor.

Rational design of tetraphenylethylene-based luminescent down-shifting molecules: photophysical studies and photovoltaic applications in a CdTe solar cell from small to large units.

Science.gov (United States)

Li, Yilin; Li, Zhipeng; Ablekim, Tursunjan; Ren, Tianhui; Dong, Wen-Ji

2014-12-21

A rational design strategy of novel fluorophores for luminescent down-shifting (LDS) application was proposed and tested in this paper. Three new fluorophores (1a-c) with specific intramolecular charge transfer (ICT) and aggregation-induced emission (AIE) characteristics were synthesized as LDS molecules for increasing the output short circuit current density (Jsc) of a CdTe solar cell. Photophysical studies of their solution and solid states, and photovoltaic measurements of their PMMA solid films applied on a CdTe solar cell suggested that the specific spectroscopic properties and Jsc enhancement effects of these molecules were highly related to their chemical structures. The Jsc enhancement effects of these fluorophores were measured on both a CdTe small cell and a large panel. An increase in the output Jsc by as high as 5.69% for a small cell and 8.88% for a large panel was observed. Compared to a traditional LDS molecule, Y083, these fluorophores exhibited more superior capabilities of LDS.

Room-temperature synthesis and characterization of porous CeO2 thin films

International Nuclear Information System (INIS)

Chu, Dewei; Masuda, Yoshitake; Ohji, Tatsuki; Kato, Kazumi

2012-01-01

CeO 2 thin films with hexagonal-shaped pores were successfully prepared by a facile electrodeposition at room temperature combined with an etching process. By using electrodeposited ZnO nanorods as a soft template, the morphology, and microstructure of the CeO 2 could be controlled. TEM observation indicated that as-prepared CeO 2 film is composed of nanocrystals with average size of several nanometers, while XPS analysis showed the coexistence of Ce 3+ and Ce 4+ in the film. The photoluminescence properties of CeO 2 films were measured, which showed much higher sensitivity compared to bare substrate. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Technical evaluation of Solar Cells, Inc., CdTe module and array at NREL

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