Polycrystalline CdTe detectors: A luminosity monitor for the LHC

Science.gov (United States)

Gschwendtner, E.; Placidia, M.; Schmicklera, H.

2003-09-01

The luminosity at the four interaction points of the Large Hadron Collider must be continuously monitored in order to provide an adequate tool for the control and optimization of the collision parameters and the beam optics. At both sides of the interaction points absorbers are installed to protect the super-conducting accelerator elements from quenches caused by the deposited energy of collision products. The luminosity detectors will be installed in the copper core of these absorbers to measure the electromagnetic and hadronic showers caused by neutral particles that are produced at the proton-proton collision in the interaction points. The detectors have to withstand extreme radiation levels (108 Gy/yr at the design luminosity) and their long-term operation has to be assured without requiring human intervention. In addition the demand for bunch-by-bunch luminosity measurements, i.e. 40 MHz detection speed, puts severe constraints on the detectors. Polycrystalline CdTe detectors have a high potential to fulfill the requirements and are considered as LHC luminosity monitors. In this paper the interaction region is shown and the characteristics of the CdTe detectors are presented.

Polycrystalline CdTe detectors: A luminosity monitor for the LHC

International Nuclear Information System (INIS)

Gschwendtner, E.; Placidia, M.; Schmicklera, H.

2003-01-01

The luminosity at the four interaction points of the Large Hadron Collider must be continuously monitored in order to provide an adequate tool for the control and optimization of the collision parameters and the beam optics. At both sides of the interaction points absorbers are installed to protect the super-conducting accelerator elements from quenches caused by the deposited energy of collision products. The luminosity detectors will be installed in the copper core of these absorbers to measure the electromagnetic and hadronic showers caused by neutral particles that are produced at the proton-proton collision in the interaction points. The detectors have to withstand extreme radiation levels (108 Gy/yr at the design luminosity) and their long-term operation has to be assured without requiring human intervention. In addition the demand for bunch-by-bunch luminosity measurements, i.e. 40 MHz detection speed, puts severe constraints on the detectors. Polycrystalline CdTe detectors have a high potential to fulfill the requirements and are considered as LHC luminosity monitors. In this paper the interaction region is shown and the characteristics of the CdTe detectors are presented

Improvement of radiation response characteristic on CdTe detectors using fast neutron irradiation

International Nuclear Information System (INIS)

Miyamaru, Hiroyuki; Takahashi, Akito; Iida, Toshiyuki

1999-01-01

The treatment of fast neutron pre-irradiation was applied to a CdTe radiation detector in order to improve radiation response characteristic. Electron transport property of the detector was changed by the irradiation effect to suppress pulse amplitude fluctuation in risetime. Spectroscopic performance of the pre-irradiated detector was compared with the original. Additionally, the pre-irradiated detector was employed with a detection system using electrical signal processing of risetime discrimination (RTD). Pulse height spectra of 241 Am, 133 Ba, and 137 Cs gamma rays were measured to examine the change of the detector performance. The experimental results indicated that response characteristic for high-energy photons was improved by the pre-irradiation. The combination of the pre-irradiated detector and the RTD processing was found to provide further enhancement of the energy resolution. Application of fast neutron irradiation effect to the CdTe detector was demonstrated. (author)

ASTRO-H CdTe detectors proton irradiation at PIF

International Nuclear Information System (INIS)

Limousin, O.; Renaud, D.; Horeau, B.; Dubos, S.; Laurent, P.; Lebrun, F.; Chipaux, R.; Boatella Polo, C.; Marcinkowski, R.; Kawaharada, M.; Watanabe, S.; Ohta, M.; Sato, G.; Takahashi, T.

2015-01-01

Asbstract: The French Atomic Energy Commission (CEA), with the support of the European Space Agency (ESA), is partner of the Soft Gamma-Ray Detector (SGD) and the Hard X-ray Imager (HXI) onboard the 6th Japanese X-ray scientific satellite ASTRO-H (JAXA) initiated by the Institute of Space and Astronautical Science (ISAS). Both scientific instruments, one hosting a series of Compton Gamma Cameras and the other being a focal plane of a grazing incidence mirror telescope in the hard X-ray domain, are equipped with Cadmium Telluride based detectors. ASTRO-H will be operated in a Low Earth Orbit with a 31° inclination at ~550 km altitude, thus passing daily through the South Atlantic Anomaly radiation belt, a specially harsh environment where the detectors are suffering the effect of the interaction with trapped high energy protons. As CdTe detector performance might be affected by the irradiation, we investigate the effect of the accumulated proton fluence on their spectral response. To do so, we have characterized and irradiated representative samples of SGD and HXI detector under different conditions. The detectors in question, from ACRORAD, are single-pixels having a size of 2 mm by 2 mm and 750 µm thick. The Schottky contact is either made of an Indium or Aluminum for SGD and HXI respectively. We ran the irradiation test campaign at the Proton Irradiation Facility (PIF) at PSI, and ESA approved equipment to evaluate the radiation hardness of flight hardware. We simulated the proton flux expected on the sensors over the entire mission, and secondary neutrons flux due to primary proton interactions into the surrounding BGO active shielding. We eventually characterized the detector response evolution, emphasizing each detector spectral response as well as its stability by studying the so-called Polarization effect. The latter is provoking a spectral response degradation against time as a charge accumulation process occurs in Schottky type CdTe sensors. In this paper

Local polarization phenomena in In-doped CdTe x-ray detector arrays

International Nuclear Information System (INIS)

Sato, Toshiyuki; Sato, Kenji; Ishida, Shinichiro; Kiri, Motosada; Hirooka, Megumi; Yamada, Masayoshi; Kanamori, Hitoshi

1995-01-01

Local polarization phenomena have been studied in detector arrays with the detector element size of 500 microm x 500 microm, which are fabricated from high-resistivity In-doped CdTe crystals grown by the vertical Bridgman technique. It has been found for the first time that a polarization effect, which is characterized by a progressive decrease of the pulse counting rate with increasing photon fluence, strongly depends on the detector elements, that is, the portion of crystals used. The influence of several parameters, such as the applied electric field strength, time, and temperature, on this local polarization effect is also investigated. From the photoluminescence measurements of the inhomogeneity of In dopant, it is concluded that the local polarization effect observed here originates from a deep level associated with In dopant in CdTe crystals

Characterization of a pixelated CdTe Timepix detector operated in ToT mode

International Nuclear Information System (INIS)

Billoud, T.; Leroy, C.; Papadatos, C.; Roux, J.S.; Pichotka, M.; Pospisil, S.

2017-01-01

A 1 mm thick CdTe sensor bump-bonded to a Timepix readout chip operating in Time-over-Threshold (ToT) mode has been characterized in view of possible applications in particle and medical physics. The CdTe sensor layer was segmented into 256 × 256 pixels, with a pixel pitch of 55  μm. This CdTe Timepix device, of ohmic contact type, has been exposed to alpha-particles and photons from an 241 Am source, photons from a 137 Cs source, and protons of different energies (0.8–10 MeV) delivered by the University of Montreal Tandem Accelerator. The device was irradiated on the negatively biased backside electrode. An X-ray per-pixel calibration commonly used for this type of detector was done and its accuracy and resolution were assessed and compared to those of a 300  μm thick silicon Timepix device. The electron mobility-lifetime product (μ e τ e ) of CdTe for protons of low energy has been obtained from the Hecht equation. Possible polarization effects have been also investigated. Finally, information about the homogeneity of the detector was obtained from X-ray irradiation.

Current state-of-the-art industrial and research applications using room-temperature CdTe and CdZnTe solid state detectors

International Nuclear Information System (INIS)

Eisen, Y.

1996-01-01

Improvements of CdTe crystal quality and significant progress in the growth of large ingots of high resistivity CdZnTe material enable the fabrication of larger area detectors in single element form or monolithic arrays. These advances allow for the development of imaging devices of improved spatial resolution for industrial, research and medical applications. CdTe and CdZnTe detectors operate in single photon counting mode or in current mode (charge integrating mode). The paper presents advantages of CdTe and CdZnTe over common scintillator type detectors, but also presents the shortcomings of the former detectors with respect to charge collection which limit the yields of good spectrometers. The paper reviews industrial and research applications utilizing these detectors and in particular describes in detail two imaging systems for security screening and custom inspection. These systems are characterized by large dynamic range and good spatial resolution and are composed of large arrays of CdTe spectrometers and discriminator grade detectors. A wide energy range detector assembly, for astrophysical research of gamma ray bursts composed of CdTe, HgI 2 and CdZnTe spectrometers in two dimensional arrays is also presented. (orig.)

Thrombus detection using 125I-fibrinogen and a CdTe probe

International Nuclear Information System (INIS)

Garcia, D.A.; Frisbie, J.H.; Tow, D.E.; Sasahara, A.A.; Entine, G.

1976-01-01

A compact CdTe detector system was developed for use in a clinical screening test for venous thrombosis of the legs. Patients given intravenously administered autologous 125 I-fibrinogen were probed externally at selected points on the thighs and calves for abnormal accumulations of radioactivity. Measurements made with the CdTe probe were compared to those obtained with a standard portable NaI detector system. The CdTe probe was the equal of the NaI detector in diagnostic capability. The compact design of the semiconductor system considerably eased the probing procedure, especially in bedridden patients with limited mobility of the extremities

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

Energy Technology Data Exchange (ETDEWEB)

Barber, W.C., E-mail: william.barber@dxray.com [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Wessel, J.C. [DxRay, Inc., Northridge, CA (United States); Interon AS, Asker (Norway); Nygard, E. [Interon AS, Asker (Norway); Iwanczyk, J.S. [DxRay, Inc., Northridge, CA (United States)

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high

Characterization inconsistencies in CdTe and CZT gamma-ray detectors

International Nuclear Information System (INIS)

Lavietes, A.D.; McQuaid, J.H.

1994-10-01

In the past few years, significant developments in cadmium telluride (CdTe) and cadmium zinc telluride (CZT) semiconductor materials have taken place with respect to both quality and yield. Many of the more recent developments have occurred in the area of CZT crystal growth. This has resulted in an explosion of interest in the use of these materials in ambient temperature gamma-ray detectors. Most, if not all, of the manufacturers of CdTe and CZT have acquired government funding to continue research in development and applications, indicating the importance of these improvements in material quality. We have examined many detectors, along with the accompanying manufacturer's data, and it has become apparent that a clear standard does not exist by which each manufacturer characterizes the performance of their material. Result is a wide variety of performance claims that have no basis for comparison and normally cannot be readily reproduced. This paper first supports our observations and then proposes a standard that all manufacturers and users of these materials may use for characterization

Study of the effect of the stress on CdTe nuclear detectors

International Nuclear Information System (INIS)

Ayoub, M.; Radley, I.; Mullins, J. T.; Hage-Ali, M.

2013-01-01

CdTe detectors are commonly used for X and γ ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and γ-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given

Study of the effect of the stress on CdTe nuclear detectors

Energy Technology Data Exchange (ETDEWEB)

Ayoub, M.; Radley, I.; Mullins, J. T. [Kromek, Thomas Wright way, TS21 3FD, Sedgefield, County Durham (United Kingdom); Hage-Ali, M. [CLEA, Airport road, Beirut (Lebanon)

2013-09-14

CdTe detectors are commonly used for X and γ ray applications. The performance of these detectors is strongly affected by different types of mechanical stress; such as that caused by differential expansion between the semiconductor and its intimate metallic contacts and that caused by applied pressure during the bonding process. The aim of this work was to study the effects of stress on the performance of CdTe detectors. A difference in expansion coefficients induces transverse stress under the metallic contact, while contact pressure induces longitudinal stress. These stresses have been simulated by applying known static pressures. For the longitudinal case, the pressure was applied directly to the metallic contact; while in the transverse case, it was applied to the side. We have studied the effect of longitudinal and transverse stresses on the electrical characteristics including leakage current measurements and γ-ray detection performance. We have also investigated induced defects, their nature, activation energies, cross sections, and concentrations under the applied stress by using photo-induced current transient spectroscopy and thermoelectric effect spectroscopy techniques. The operational stress limit is also given.

Feasibility study on BNCT-SPECT using a CdTe detector

International Nuclear Information System (INIS)

Murata, Isao; Mukai, Taiki; Ito, Masao; Miyamaru, Hiroyuki; Yoshida, Shigeo

2011-01-01

There is no doubt that boron neutron capture therapy (BNCT) is a promising cancer therapy in the near future. At present, one of the severest problems to solve is monitoring of the treatment effect during neutron irradiation. It is known to be difficult in real time. So far, activation foils, small detectors and so on were used to measure the thermal neutron fluence in a certain place of the tumor. The dose distribution is thus estimated from the measured result and prediction with a transport code. In the present study, 478 keV gamma-rays emitted from the excited state of 7 Li produced by 10 B(n,α) 7 Li reaction are directly measured to realize real time monitoring of the treatment effect of BNCT. In this paper, the result of the feasibility study carried out using a Monte Carlo transport code is summarized. We used CdTe detectors with a quite narrow collimator to obtain a BNCT image keeping good spatial resolution. The intensity of capture gamma-rays of 2223 keV produced by 1 H(n,γ) 2 H reaction is very much higher than that of 478 keV. We thus adjusted the detector efficiency by selecting an appropriate thickness so as to optimize the efficiency ratio between 478 and 2223 keV. From the result of the detector response calculation, in case of 20 mm thick CdTe detector with the collimator of 2 mm in diameter, sufficient net count of ∼1000 for 478 keV in 30 min. was realized. It means an efficient and high-resolution BNCT-SPECT image could be obtained. (author)

New developments in clinical applications of CdTe and CdZnTe detectors

International Nuclear Information System (INIS)

Scheiber, C.

1996-01-01

This review about the medical applications of CdTe and CdZnTe is an update on the 1992 paper (1992). This new paper is legitimized by the recent progress which has been made in this field. First of all, the usefulness of a new material, i.e. CdZnTe, has been demonstrated. While the two materials are still being improved, it seems as yet too early to debate which of CdTe:Cl or CdZnTe will be the best choice. Historical applications span over the past 18 years, involving devices like miniature probes for per-operative scintigraphy or the monitoring of physiological functions and, closer to us, appliances dedicated to bone densitometry, and have been expanding as such devices have become commercially available, for many years now. Newly available microelectronic circuitry allows 2D-arrays to be built for digital quantitative X-ray (chest, dental..) and for high-resolution gamma cameras. The clinical demand is very high, especially in the field of nuclear medicine. Although there already exist clinical demonstrators, the future of such CdTe applications depends on further reduction in material and device mounting costs. New perspectives concern XCT applications, but the data resulting from research work are kept for restricted use within industrial R and D laboratories. (orig.)

Spectroscopic Imaging Using Ge and CdTe Based Detector Systems for Hard X-ray Applications

Science.gov (United States)

Astromskas, Vytautas

Third generation synchrotron facilities such as the Diamond Light Source (DLS) have a wide range of experiments performed for a wide range of science fields. The DLS operates at energies up to 150 keV which introduces great challenges to radiation detector technology. This work focuses on the requirements that the detector technology faces for X-ray Absorption Fine Structure (XAFS) and powder diffraction experiments in I12 and I15 beam lines, respectively. A segmented HPGe demonstrator detector with in-built charge sensitive CUBE preamplifiers and a Schottky e- collection CdTe Medipix3RX detector systems were investigated to understand the underlying mechanisms that limit spectroscopic, imaging performances and stability and to find ways to overcome or minimise those limitations. The energy resolution and stability of the Ge demonstrator detector was found to have the required characteristics for XAFS measurements. Charge sharing was identified as a limiting factor to the resolution which is going to be addressed in the future development of a full detector system as well as reductions in electronic noise and cross-talk effects. The stability study of the Schottky CdTe Medipix3RX detector showed that polarization is highly dependent on temperature, irradiation duration and incoming flux. A new pixel behaviour called tri-phase (3-P) pixel was identified and a novel method for determining optimum operational conditions was developed. The use of the 3-P pixels as a criterion for depolarization resulted in a stable performance of the detector. Furthermore, the detector was applied in powder diffraction measurement at the I15 beam line and resulted in the detector diffraction pattern matching the simulated data. CdTe Medipix3RX and HEXITEC spectroscopic imaging detectors were applied in identification and discrimination of transitional metals for security application and K-edge subtraction for medical applications. The results showed that both detectors have potential

Development of a Schottky CdTe Medipix3RX hybrid photon counting detector with spatial and energy resolving capabilities

Energy Technology Data Exchange (ETDEWEB)

Gimenez, E.N., E-mail: Eva.Gimenez@diamond.ac.uk [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom); Astromskas, V. [University of Surrey (United Kingdom); Horswell, I.; Omar, D.; Spiers, J.; Tartoni, N. [Diamond Light Source, Harwell Campus, Oxforshire OX11 0DE (United Kingdom)

2016-07-11

A multichip CdTe-Medipix3RX detector system was developed in order to bring the advantages of photon-counting detectors to applications in the hard X-ray range of energies. The detector head consisted of 2×2 Medipix3RX ASICs bump-bonded to a 28 mm×28 mm e{sup −} collection Schottky contact CdTe sensor. Schottky CdTe sensors undergo performance degrading polarization which increases with temperature, flux and the longer the HV is applied. Keeping the temperature stable and periodically refreshing the high voltage bias supply was used to minimize the polarization and achieve a stable and reproducible detector response. This leads to good quality images and successful results on the energy resolving capabilities of the system. - Highlights: • A high atomic number (CdTe sensor based) photon-counting detector was developed. • Polarization effects affected the image were minimized by regularly refreshing the bias voltage and stabilizing the temperature. • Good spatial resolution and image quality was achieved following this procedure.

Improvement of the sensitivity of CdTe detectors in the high energy regions

Energy Technology Data Exchange (ETDEWEB)

Nishizawa, Hiroshi; Ikegami, Kazunori; Takashima, Kazuo; Usami, Teruo [Mitsubishi Electric Corp., Tokyo (Japan); Yamamoto, Takayoshi

1996-07-01

In order to improve the efficiency of the full energy peak in the high energy regions, we had previously suggested a multi-layered structure of CdTe elements and have since confirmed the sensitivity improvement of the full energy peak. And furthermore, we have suggested a new type structure of multi-layered elements in this paper and we confirmed that the efficiency of the full energy peak became higher and that more proper energy spectra were obtained by our current experiment than by the detector with the conventional structure. This paper describes a simulation and experiment to improve the efficiency of the full energy peak and to obtain the more proper energy spectra of {sup 137}Cs (662keV) and {sup 60}Co (1.17 and 1.33MeV) using the new structure of CdTe detector. (J.P.N.)

Evaluation of XRI-UNO CdTe detector for nuclear medical imaging

International Nuclear Information System (INIS)

Jambi, L.K.; Lees, J.E.; Bugby, S.L.; Alqahtani, M.S.; Tipper, S.; Perkins, A.C.

2015-01-01

Over the last two decades advances in semiconductor detector technology have reached the point where they are sufficiently sensitive to become an alternative to scintillators for high energy gamma ray detection for application in fields such as medical imaging. This paper assessed the Cadmium-Telluride (CdTe) XRI-UNO semiconductor detector produced by X-RAY Imatek for photon energies of interest in nuclear imaging. The XRI-UNO detector was found to have an intrinsic spatial resolution of <0.5mm and a high incident count rate capability up to at least 1680cps. The system spatial resolution, uniformity and sensitivity characteristics are also reported

Polycrystalline CdTe Detectors A Luminosity Monitor for the LHC

CERN Document Server

Gschwendtner, E; Schmickler, Hermann

2003-01-01

The luminosity at the four interaction points of the Large Hadron Collider must be continuously monitored in order to provide an adequate tool for the control and optimization of the collision parameters and the beam optics. At both sides of the interaction points absorbers are installed to protect the super-conducting accelerator elements from quenches causes by the deposited energy of collision products. The luminosity detectors will be installed in the copper core of these absorbers to measure the electromagnetic and hadronic showers caused by neutral particles that are produced at the proton-proton collision in the interaction points. The detectors have to withstand extreme radiation levels (10^8 Gy/yr at the design luminosity) and their long-term operation has to be assured without requiring humain intervention. In addition the demand for bunch-by-bunch luminosity measurements, i.e. 40MHz detection speed, puts severe constraints on the detectors. Polycrystalline CdTe detectors have a high potential to fu...

Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications.

Science.gov (United States)

Vedantham, Srinivasan; Shrestha, Suman; Karellas, Andrew; Shi, Linxi; Gounis, Matthew J; Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo

2016-05-01

�m square pixels using trilinear interpolation, the presampled MTF at Nyquist frequency of 9.26 cycles/mm was 0.29 and 0.24 along the orthogonal directions and the limiting resolution (10% MTF) occurred at approximately 12 cycles/mm. Visual analysis of a bar pattern image showed the ability to resolve close to 12 line-pairs/mm and qualitative evaluation of a neurovascular nitinol-stent showed the ability to visualize its struts at clinically relevant conditions. Hexagonal pixel array photon-counting CdTe detector provides high spatial resolution in single-photon counting mode. After resampling to optimal square pixel size for distortion-free display, the spatial resolution is preserved. The dual-energy capabilities of the detector could allow for artifact-free subtraction angiography and basis material decomposition. The proposed high-resolution photon-counting detector with energy-resolving capability can be of importance for several image-guided interventional procedures as well as for pediatric applications.

CdTe and CdZnTe gamma ray detectors for medical and industrial imaging systems

International Nuclear Information System (INIS)

Eisen, Y.; Shor, A.; Mardor, I.

1999-01-01

CdTe and CdZnTe X-ray and gamma ray detectors in the form of single elements or as segmented monolithic detectors have been shown to be useful in medical and industrial imaging systems. These detectors possess inherently better energy resolution than scintillators coupled to either photodiodes or photomultipliers, and together with application specific integrated circuits they lead to compact imaging systems of enhanced spatial resolution and better contrast resolution. Photopeak efficiencies of these detectors is greatly affected by a relatively low hole mobility-lifetime product. Utilizing these detectors as highly efficient good spectrometers, demands use of techniques to improve their charge collection properties, i.e., correct for variations in charge losses at different depths of interaction in the detector. The corrections for the large hole trapping are made either by applying electronic techniques or by fabricating detector or electrical contacts configurations which differ from the commonly used planar detectors. The following review paper is divided into three parts: The first part discusses detector contact configurations for enhancing photopeak efficiencies and the single carrier collection approach which leads to improved energy resolutions and photopeak efficiencies at high gamma ray energies. The second part demonstrates excellent spectroscopic results using thick CdZnTe segmented monolithic pad and strip detectors showing energy resolutions less than 2% FWHM at 356 keV gamma rays. The third part discusses advantages and disadvantages of CdTe and CdZnTe detectors in imaging systems and describes new developments for medical diagnostics imaging systems

Pixelized M-pi-n CdTe detector coupled to Medipix2 readout chip

CERN Document Server

Kalliopuska, J; Penttila, R; Andersson, H; Nenonen, S; Gadda, A; Pohjonen, H; Vanttajac, I; Laaksoc, P; Likonen, J

2011-01-01

We have realized a simple method for patterning an M-pi-n CdTe diode with a deeply diffused pn-junction, such as indium anode on CdTe. The method relies on removing the semiconductor material on the anode-side of the diode until the physical junction has been reached. The pixelization of the p-type CdTe diode with an indium anode has been demonstrated by patterning perpendicular trenches with a high precision diamond blade and pulsed laser. Pixelization or microstrip pattering can be done on both sides of the diode, also on the cathode-side to realize double sided detector configuration. The article compares the patterning quality of the diamond blade process, pulsed pico-second and femto-second lasers processes. Leakage currents and inter-strip resistance have been measured and are used as the basis of the comparison. Secondary ion mass spectrometry (SIMS) characterization has been done for a diode to define the pn-junction depth and to see the effect of the thermal loads of the flip-chip bonding process. Th...

Possible use of CdTe detectors in kVp monitoring of diagnostic X-ray tubes

International Nuclear Information System (INIS)

Krmar, M.; Bucalovic, N.; Baucal, M.; Jovancevic, N.

2010-01-01

It has been suggested that kVp of diagnostic X-ray devices (or maximal energy of X-ray photon spectra) should be monitored routinely; however a standardized non-invasive technique has yet to be developed and proposed. It is well known that the integral number of Compton scattered photons and the intensities of fluorescent X-ray lines registered after irradiation of some material by an X-ray beam are a function of the maximal beam energy. CdTe detectors have sufficient energy resolution to distinguish individual X-ray fluorescence lines and high efficiency for the photon energies in the diagnostic region. Our initial measurements have demonstrated that the different ratios of the integral number of Compton scattered photons and intensities of K and L fluorescent lines detected by CdTe detector are sensitive function of maximal photon energy and could be successfully applied for kVp monitoring.

Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications

Energy Technology Data Exchange (ETDEWEB)

Vedantham, Srinivasan; Shrestha, Suman; Karellas, Andrew, E-mail: andrew.karellas@umassmed.edu; Shi, Linxi; Gounis, Matthew J. [Department of Radiology, University of Massachusetts Medical School, Worcester, Massachusetts 01655 (United States); Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo [Istituto Nazionale di Fisica Nucleare (INFN), Pisa 56127, Italy and Pixirad Imaging Counters s.r.l., L. Pontecorvo 3, Pisa 56127 (Italy)

2016-05-15

�m. After resampling to 54 μm square pixels using trilinear interpolation, the presampled MTF at Nyquist frequency of 9.26 cycles/mm was 0.29 and 0.24 along the orthogonal directions and the limiting resolution (10% MTF) occurred at approximately 12 cycles/mm. Visual analysis of a bar pattern image showed the ability to resolve close to 12 line-pairs/mm and qualitative evaluation of a neurovascular nitinol-stent showed the ability to visualize its struts at clinically relevant conditions. Conclusions: Hexagonal pixel array photon-counting CdTe detector provides high spatial resolution in single-photon counting mode. After resampling to optimal square pixel size for distortion-free display, the spatial resolution is preserved. The dual-energy capabilities of the detector could allow for artifact-free subtraction angiography and basis material decomposition. The proposed high-resolution photon-counting detector with energy-resolving capability can be of importance for several image-guided interventional procedures as well as for pediatric applications.

Fine-Pitch CdTe Detector for Hard X-Ray Imaging and Spectroscopy of the Sun with the FOXSI Rocket Experiment

Science.gov (United States)

Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'lchiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Bultrago-Casas, Juan Camilo; Krucker, Sam;

Basic performance and stability of a CdTe solid-state detector panel.

Science.gov (United States)

Tsuchiya, Katsutoshi; Takahashi, Isao; Kawaguchi, Tsuneaki; Yokoi, Kazuma; Morimoto, Yuuichi; Ishitsu, Takafumi; Suzuki, Atsurou; Ueno, Yuuichirou; Kobashi, Keiji

2010-05-01

We have developed a prototype gamma camera system (R1-M) using a cadmium telluride (CdTe) detector panel and evaluated the basic performance and the spectral stability. The CdTe panel consists of 5-mm-thick crystals. The field of view is 134 x 268 mm comprising 18,432 pixels with a pixel pitch of 1.4 mm. Replaceable small CdTe modules are mounted on to the circuit board by dedicated zero insertion force connectors. To make the readout circuit compact, the matrix read out is processed by dedicated ASICs. The panel is equipped with a cold-air cooling system. The temperature and humidity in the panel were kept at 20 degrees C and below 70% relative humidity. CdTe polarization was suppressed by the bias refresh technique to stabilize the detector. We also produced three dedicated square pixel-matched collimators: LEGP (20 mm-thick), LEHR (27 mm-thick), and LEUHR (35 mm-thick). We evaluated their basic performance (energy resolution, system resolution, and sensitivity) and the spectral stability in terms of short-term (several hours of continuous acquisition) and long-term (infrequent measurements over more than a year) activity. The intrinsic energy resolution (FWHM) acquired with Tc-99m (140.5 keV) was 6.6%. The spatial resolutions (FWHM at a distance of 100 mm) with LEGP, LEHR, and LEUHR collimators were 5.7, 4.9, and 4.2 mm, and the sensitivities were 71, 39, and 23 cps/MBq, respectively. The energy peak position and the intrinsic energy resolution after several hours of operation were nearly the same as the values a few minutes after the system was powered on; the variation of the peak position was <0.2%, and that of the resolution was about 0.3%. Infrequent measurements conducted over a year showed that the variations of the energy peak position and the intrinsic energy resolution of the system were at a similar level to those described above. The basic performance of the CdTe-gamma camera system was evaluated, and its stability was verified. It was shown that the

X-ray micro-beam characterization of a small pixel spectroscopic CdTe detector

Science.gov (United States)

Veale, M. C.; Bell, S. J.; Seller, P.; Wilson, M. D.; Kachkanov, V.

2012-07-01

A small pixel, spectroscopic, CdTe detector has been developed at the Rutherford Appleton Laboratory (RAL) for X-ray imaging applications. The detector consists of 80 × 80 pixels on a 250 μm pitch with 50 μm inter-pixel spacing. Measurements with an 241Am γ-source demonstrated that 96% of all pixels have a FWHM of better than 1 keV while the majority of the remaining pixels have FWHM of less than 4 keV. Using the Diamond Light Source synchrotron, a 10 μm collimated beam of monochromatic 20 keV X-rays has been used to map the spatial variation in the detector response and the effects of charge sharing corrections on detector efficiency and resolution. The mapping measurements revealed the presence of inclusions in the detector and quantified their effect on the spectroscopic resolution of pixels.

Comparative study for small computer supported clearance determination with 131iodine hippuran using CdTe detectors

International Nuclear Information System (INIS)

Duerr, G.

1986-01-01

With the goal to work out a simple, non-invasive method for the total clearance determination also for immobile patients, we carried out this clearance study with CdTe semi-conductor detectors. The 131 iodine hippuran clearance determination was carried out on 69 patients in the nuclear medicine department of the Radiological Policlinic in the framework of a routine diagnosis with ambulant and stationary patients with a gamma camera and a connecting evaluation system. At the same time we recorded the shoulder curves using two CdTe semi-conductor detectors and deposited the data in a portable semi-conductor memory. Next the hypotheses for the routine use with the inclusion of commercially common small computers was worked out. The plasma disappearance curves which were recorded over the shoulder region were evaluated with a small computer according to the method of the modified Oberhausen tables and the Oberhausen formula. (orig./DG) [de

CdTe in photoconductive applications. Fast detector for metrology and X-ray imaging

International Nuclear Information System (INIS)

Cuzin, M.

1991-01-01

Operating as a photoconductor, the sensitivity and the impulse response of semi-insulating materials greatly depend on the excitation duration compared to electron and hole lifetimes. The requirement of ohmic contact is shortly discussed. Before developing picosecond measurements with integrated autocorrelation system, this paper explains high energy industrial tomographic application with large CdTe detectors (25x15x0.9 mm 3 ). The excitation is typically μs range. X-ray flash radiography, with 10 ns burst, is in an intermediate time domain where excitation is similar to electron life-time. In laser fusion experiment excitation is in the range of 50 ps and we develop photoconductive devices able to study very high speed X-ray emission time behaviour. Thin polycristalline MOCVD CdTe films with picosecond response are suitable to perform optical correlation measurements of single shot pulses with a very large bandwidth (- 50 GHz)

Measurements of low noise 64 channel counting ASIC for Si and CdTe strip detectors

International Nuclear Information System (INIS)

Kachel, M; Grybos, P; Szczygiel, R; Takeyoshi, T

2011-01-01

We present the design and performance of a 64-channel ASIC called SXDR64. The circuit is intended to work with DC coupled CdTe detectors as well as with standard AC coupled Si detectors. A single channel of the ASIC consists of a charge sensitive amplifier with a pole-zero cancellation circuit, a 4 th order programmable shaper, a base-line restorer and two independent discriminators with 20-bit counters equipped with RAM. The circuit is able to operate correctly with both polarities of the input signal and the detectors leakage current in a few nA range, with the average rate of input pulses up to 1 Mcps.

Digital signal processing for CdTe detectors using VXIbus data collection systems

Energy Technology Data Exchange (ETDEWEB)

Fukuda, Daiji; Takahashi, Hiroyuki; Kurahashi, Tomohiko; Iguchi, Tetsuo; Nakazawa, Masaharu

1996-07-01

Recently fast signal digitizing technique has been developed, and signal waveforms with very short time periods can be obtained. In this paper, we analyzed each measured pulse which was digitized by an apparatus of this kind, and tried to improve an energy resolution of a CdTe semiconductor detector. The result of the energy resolution for {sup 137}Cs 662 keV photopeak was 13 keV. Also, we developed a fast data collection system based on VXIbus standard, and the counting rate on this system was obtained about 50 counts per second. (author)

IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

International Nuclear Information System (INIS)

Gevin, O.; Baron, P.; Coppolani, X.; Delagnes, E.; Lugiez, F.; Daly, F.; Limousin, O.; Meuris, A.; Pinsard, F.; Renaud, D.

2009-01-01

The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e - rms) and to its radiation hardened design (Single Event Latch-up Linear Energy Transfer threshold of 56 MeV.cm 2 .mg -1 ), the chip is well suited for soft X-rays energy discrimination and high energy resolution, 'space proof', hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7e - /pF obtained with a 6 μs peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky mono-pixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission. (authors)

IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

Science.gov (United States)

Gevin, Olivier; Baron, Pascal; Coppolani, Xavier; Daly, FranÇois; Delagnes, Eric; Limousin, Olivier; Lugiez, Francis; Meuris, Aline; Pinsard, FrÉdÉric; Renaud, Diana

2009-08-01

The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e- rms) and to its radiation hardened design (Single Event Latchup Linear Energy Transfer threshold of 56 MeV.cm2.mg-1), the chip is well suited for soft X-rays energy discrimination and high energy resolution, ldquospace proof,rdquo hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7 e-/pF obtained with a 6 mus peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky monopixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission.

Performance optimization of CdTe and CdZnTe detectors for γ-spectrometry

International Nuclear Information System (INIS)

Montemont, Guillaume

2000-01-01

This study deals with room-temperature gamma spectrometry with CdTe and CdZnTe semiconductor detectors. The aim was the improvement of energy resolution and detection efficiency. Some different phenomena have been investigated. Electronic noise knowledge has enabled us to optimize the design of filtering. Charge transport induces signal shape uncertainty and the processing circuit has been adapted in order to account for these variations. Study and simulation of electrical current induction process has permitted the development of a new Frisch-grid based detection structure. We have reached 3% energy resolutions at 122 keV without detection efficiency loss. Finally, the remaining limits of detector performances have been estimated by focusing on gamma interaction phenomena and material non-uniformity problems. (author) [fr

CdTe and CdZnTe detectors behavior in X-ray computed tomography conditions

CERN Document Server

Ricq, S; Garcin, M

2000-01-01

The application of CdTe and CdZnTe 2D array detectors for medical X-ray Computed Tomography (XCT) is investigated. Different metallic electrodes have been deposited on High-Pressure Bridgman Method CdZnTe and on Traveling Heater Method CdTe:Cl. These detectors are exposed to X-rays in the CT irradiation conditions and are characterized experimentally in current mode. Detectors performances such as sensitivity and response speed are studied. They are correlated with charge trapping and de-trapping. The trapped carrier space charges may influence the injection from the electrodes. This enables one to get information on the nature of the predominant levels involved. The performances achieved are encouraging: dynamic ranges higher than 4 decades and current decreases of 3 decades in 4 ms after X-ray beam cut-off are obtained. Nevertheless, these detectors are still limited by high trap densities responsible for the memory effect that makes them unsuitable for XCT.

Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications

Energy Technology Data Exchange (ETDEWEB)

Smith, L.; Murphy, J.W. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Kim, J. [Korean Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Rozhdestvenskyy, S.; Mejia, I. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Park, H. [Korean Research Institute of Standards and Science, Daejeon 305-600 (Korea, Republic of); Allee, D.R. [Flexible Display Center, Arizona State University, Phoenix, AZ 85284 (United States); Quevedo-Lopez, M. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Gnade, B., E-mail: beg031000@utdallas.edu [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States)

2016-12-01

Solid-state neutron detectors offer an alternative to {sup 3}He based detectors, but suffer from limited neutron efficiencies that make their use in security applications impractical. Solid-state neutron detectors based on single crystal silicon also have relatively high gamma-ray efficiencies that lead to false positives. Thin film polycrystalline CdTe based detectors require less complex processing with significantly lower gamma-ray efficiencies. Advanced geometries can also be implemented to achieve high thermal neutron efficiencies competitive with silicon based technology. This study evaluates these strategies by simulation and experimentation and demonstrates an approach to achieve >10% intrinsic efficiency with <10{sup −6} gamma-ray efficiency.

Application of CdTe for the NeXT mission

International Nuclear Information System (INIS)

Takahashi, Tadayuki; Nakazawa, Kazuhiro; Watanabe, Shin; Sato, Goro; Mitani, Takefumi; Tanaka, Takaaki; Oonuki, Kousuke; Tamura, Ken'ichi; Tajima, Hiroyasu; Kamae, Tuneyoshi; Madejski, Greg; Nomachi, Masaharu; Fukazawa, Yasushi; Makishima, Kazuo; Kokubun, Motohide; Terada, Yukikatsu; Kataoka, Jun; Tashiro, Makoto

2005-01-01

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and γ-ray detection. The high-atomic number of the materials (Z Cd =48,Z Te =52) gives a high quantum efficiency in comparison with Si. The large band-gap energy (E g =1.5eV) allows to operate the detector at room temperature. Based on recent achievements in high-resolution CdTe detectors, in the technology of ASICs and in bump-bonding, we have proposed the novel hard X-ray and γ-ray detectors for the NeXT mission in Japan. The high-energy response of the super mirror onboard NeXT will enable us to perform the first sensitive imaging observations up to 80keV. The focal plane detector, which combines a fully depleted X-ray CCD and a pixellated CdTe detector, will provide spectra and images in the wide energy range from 0.5 to 80keV. In the soft γ-ray band up to ∼ 1MeV, a narrow field-of-view Compton γ-ray telescope utilizing several tens of layers of thin Si or CdTe detector will provide precise spectra with much higher sensitivity than present instruments. The continuum sensitivity will reach several x10 -8 photons -1 keV -1 cm -2 in the hard X-ray region and a few x10 -7 photons -1 keV -1 cm -2 in the soft γ-ray region

Studies and development of a readout ASIC for pixelated CdTe detectors for space applications

International Nuclear Information System (INIS)

Michalowska, A.

2013-01-01

The work presented in this thesis is part of a project where a new instrument is developed: a camera for hard X-rays imaging spectroscopy. It is dedicated to fundamental research for observations in astrophysics, at wavelengths which can only be observed using space-borne instruments. In this domain the spectroscopic accuracy as well as the imaging details are of high importance. This work has been realized at CEA/IRFU (Institut de Recherche sur les lois Fondamentales de l'Univers), which has a long-standing and successful experience in instruments for high energy physics and space physics instrumentation. The objective of this thesis is the design of the readout electronics for a pixelated CdTe detector, suitable for a stacked assembly. The principal parameters of this integrated circuit are a very low noise for reaching a good accuracy in X-ray energy measurement, very low power consumption, a critical parameter in space-borne applications, and a small dead area for the full system combining the detector and the readout electronics. In this work I have studied the limits of these three parameters in order to optimize the circuit. In terms of the spectral resolution, two categories of noise had to be distinguished to determine the final performance. The first is the Fano noise limit, related to detector interaction statistics, which cannot be eliminated. The second is the electronic noise, also unavoidable; however it can be minimized through optimization of the detection chain. Within the detector, establishing a small pixel pitch of 300 μm reduces the input capacitance and the dark current. This limits the effects of the electronic noise. Also in order to limit the input capacitance the future camera is designed as a stacked assembly of the detector with the readout ASIC. This allows to reach extremely good input parameters seen by the readout electronics: a capacitance in range of 0.3 pF-1 pF and a dark current below 5 pA. In the frame of this thesis I have

Edge effects in a small pixel CdTe for X-ray imaging

Science.gov (United States)

Duarte, D. D.; Bell, S. J.; Lipp, J.; Schneider, A.; Seller, P.; Veale, M. C.; Wilson, M. D.; Baker, M. A.; Sellin, P. J.; Kachkanov, V.; Sawhney, K. J. S.

2013-10-01

Large area detectors capable of operating with high detection efficiency at energies above 30 keV are required in many contemporary X-ray imaging applications. The properties of high Z compound semiconductors, such as CdTe, make them ideally suitable to these applications. The STFC Rutherford Appleton Laboratory has developed a small pixel CdTe detector with 80 × 80 pixels on a 250 μm pitch. Historically, these detectors have included a 200 μm wide guard band around the pixelated anode to reduce the effect of defects in the crystal edge. The latest version of the detector ASIC is capable of four-side butting that allows the tiling of N × N flat panel arrays. To limit the dead space between modules to the width of one pixel, edgeless detector geometries have been developed where the active volume of the detector extends to the physical edge of the crystal. The spectroscopic performance of an edgeless CdTe detector bump bonded to the HEXITEC ASIC was tested with sealed radiation sources and compared with a monochromatic X-ray micro-beam mapping measurements made at the Diamond Light Source, U.K. The average energy resolution at 59.54 keV of bulk and edge pixels was 1.23 keV and 1.58 keV, respectively. 87% of the edge pixels present fully spectroscopic performance demonstrating that edgeless CdTe detectors are a promising technology for the production of large panel radiation detectors for X-ray imaging.

Development of a 32-detector CdTe matrix for the SVOM ECLAIRs X/Gamma camera: Preliminary results

Energy Technology Data Exchange (ETDEWEB)

Lacombe, K., E-mail: karine.lacombe@irap.omp.eu [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Nasser, G.; Amoros, C.; Atteia, J.-L.; Barret, D. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Billot, M. [CNES, 18 Av. Edouard Belin, 31 401 Toulouse Cedex 9 (France); Cordier, B.; Gevin, O. [CEA, IRFU, 91191 Gif-sur-Yvette (France); Godet, O. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Gonzalez, F. [CNES, 18 Av. Edouard Belin, 31 401 Toulouse Cedex 9 (France); Houret, B.; Landé, J. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Lugiez, F. [CEA, IRFU, 91191 Gif-sur-Yvette (France); Mandrou, P.; Martin, J.-A.; Marty, W. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); Mercier, K. [CNES, 18 Av. Edouard Belin, 31 401 Toulouse Cedex 9 (France); Pons, R.; Rambaud, D.; Ramon, P. [Université de Toulouse, Toulouse (France); UPS-OMP, Toulouse (France); IRAP CNRS, 9 Av. Colonel Roche, BP 44346, F-31028 Toulouse Cedex 4 (France); and others

2013-12-21

ECLAIRs, a 2D coded-mask imaging telescope on the Sino-French SVOM space mission, will detect and locate gamma-ray bursts (GRBs) between 4 and 150 keV. The detector array is an assembly of 6400 Schottky CdTe detectors of size 4×4×1 mm{sup 3}, biased from −100 V to −600 V and operated at −20 °C to minimize the leakage current and maximize the polarization time. The remarkable low-energy threshold is achieved through various steps: an extensive detectors selection, a low-noise 32 channels ASIC study, and the design of an innovative detection module called XRDPIX formed by a thick film ceramic holding 32 detectors, a high voltage grid and an HTCC substrate housing the ASIC within a hermetic cavity. In this paper, we describe the XRDPIX module and explain the results of first tests to measure the linearity and compare the sources of noise, such as leakage currents and the Equivalent Noise Charge (ENC) measured on ASIC Ceramics. We confront these values with the energy threshold and spectral resolution made with dedicated test benches. Finally, we present the superposition of 32 calibrated spectra of one XRDPIX module, showing the excellent homogeneity of the 32 detectors and the achievement of a detection threshold at 4 keV over the entire module. -- Highlights: •We develop X and gamma rays detection modules to shape a space telescope. •The main goal of 4 keV threshold is reached thanks to a new hybrid based on CdTe. •Great spectral performance depends on low equivalent noise charge of ASIC on ceramics. •We study the good linearity of the calibration curve below the 16 keV energy. •An outgassing stage will decrease the leakage current of detectors glued on ceramics.

Solid-state cadmium telluride radiation detector

Energy Technology Data Exchange (ETDEWEB)

Takeuchi, Yoji; Kitamoto, Hisashi; Hosomatsu, Haruo

1984-09-01

The growth of CdTe single crystal and its application to CdTe detector array was studied for X-ray computed tomography (XCT) equipment. A p-type CdTe single crystal with 10/sup 4/ ohm.cm specific resistivity was grown in a quartz ampoule under vapor pressure control of Cd in a vertical Bridgman furnace. An 18-element detector array was fabricated with this single crystal. The detector was operated with no bias and the sensitivity was confirmed to be between 2.8 x 10/sup -12/ and 14 x 10/sup -12/ A.h/(R.mm/sup 2/). Commercial CdTe single crystal was used to manufacture as 560-element detector array for XCT. Results show that CdTe detector is sensitive, linear and has high resolution.

Stability issues of high-energy resolution diode type CdTe nuclear radiation detectors in a long-term operation

CERN Document Server

Niraula, M; Aoki, T; Tomita, Y; Hatanaka, Y

2002-01-01

High-energy resolution diode type CdTe detectors were fabricated by growing an n-type epitaxial layer on high resistivity p-like crystal wafers, and their stability issues during a long-term operation were studied. Room temperature stability of the detectors was not good at low operating biases of around 200 V. However, it could be improved significantly by operating them at higher biases under full depletion conditions. On the other hand, detectors exhibited excellent stability by cooling them slightly below room temperature down to 0 deg. C. The effect of this low level of cooling on detector stability was found to be more significant than that of applying high biases at room temperature. By using the detector type presented here, stable operation could be obtained at moderate operating voltages of around 400 V and with a modest degree of cooling.

CdTe quantum dots for an application in the life sciences

International Nuclear Information System (INIS)

Thuy, Ung Thi Dieu; Toan, Pham Song; Chi, Tran Thi Kim; Liem, Nguyen Quang; Khang, Dinh Duy

2010-01-01

This report highlights the results of the preparation of semiconductor CdTe quantum dots (QDs) in the aqueous phase. The small size of a few nm and a very high luminescence quantum yield exceeding 60% of these materials make them promisingly applicable to bio-medicine labeling. Their strong, two-photon excitation luminescence is also a good characteristic for biolabeling without interference with the cell fluorescence. The primary results for the pH-sensitive CdTe QDs are presented in that fluorescence of CdTe QDs was used as a proton sensor to detect proton flux driven by adenosine triphosphate (ATP) synthesis in chromatophores. In other words, these QDs could work as pH-sensitive detectors. Therefore, the system of CdTe QDs on chromatophores prepared from the cells of Rhodospirillum rubrum and the antibodies against the beta-subunit of F0F1–ATPase could be a sensitive detector for the avian influenza virus subtype A/H5N1

CdTe detector based PIXE mapping of geological samples

Energy Technology Data Exchange (ETDEWEB)

Chaves, P.C., E-mail: cchaves@ctn.ist.utl.pt [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Taborda, A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal); Oliveira, D.P.S. de [Laboratório Nacional de Energia e Geologia (LNEG), Apartado 7586, 2611-901 Alfragide (Portugal); Reis, M.A. [Centro de Física Atómica da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa (Portugal); IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa, Campus Tecnológico e Nuclear, EN10, 2686-953 Sacavém (Portugal)

2014-01-01

A sample collected from a borehole drilled approximately 10 km ESE of Bragança, Trás-os-Montes, was analysed by standard and high energy PIXE at both CTN (previous ITN) PIXE setups. The sample is a fine-grained metapyroxenite grading to coarse-grained in the base with disseminated sulphides and fine veinlets of pyrrhotite and pyrite. Matrix composition was obtained at the standard PIXE setup using a 1.25 MeV H{sup +} beam at three different spots. Medium and high Z elemental concentrations were then determined using the DT2fit and DT2simul codes (Reis et al., 2008, 2013 [1,2]), on the spectra obtained in the High Resolution and High Energy (HRHE)-PIXE setup (Chaves et al., 2013 [3]) by irradiation of the sample with a 3.8 MeV proton beam provided by the CTN 3 MV Tandetron accelerator. In this paper we present results, discuss detection limits of the method and the added value of the use of the CdTe detector in this context.

CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

International Nuclear Information System (INIS)

Szeles, Csaba

2004-01-01

Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd 1-x Zn x Te-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd 1-x Zn x Te detector performance. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Characterization of paraffin based breast tissue equivalent phantom using a CdTe detector pulse height analysis.

Science.gov (United States)

Cubukcu, Solen; Yücel, Haluk

2016-12-01

In this study, paraffin was selected as a base material and mixed with different amounts of CaSO 4 ·2H 2 O and H 3 BO 3 compounds in order to mimic breast tissue. Slab phantoms were produced with suitable mixture ratios of the additives in the melted paraffin. Subsequently, these were characterized in terms of first half-value layer (HVL) in the mammographic X-ray range using a pulse-height spectroscopic analysis with a CdTe detector. Irradiations were performed in the energy range of 23-35 kV p under broad beam conditions from Mo/Mo and Mo/Rh target/filter combinations. X-ray spectra were acquired with a CdTe detector without and with phantom material interposition in increments of 1 cm thickness and then evaluated to obtain the transmission data. The net integral areas of the spectra for the slabs were used to plot the transmission curves and these curves were fitted to the Archer model function. The results obtained for the slabs were compared with those of standard mammographic phantoms such as CIRS BR series phantoms and polymethylmethacrylate plates (PMMA). From the evaluated transmission curves, the mass attenuation coefficients and HVLs of some mixtures are close to those of the commercially available standard mammography phantoms. Results indicated that when a suitable proportion of H 3 BO 3 and CaSO 4 ·2H 2 O is added to the paraffin, the resulting material may be a good candidate for a breast tissue equivalent phantom.

Study and development of new CdTe and CdZnTe detection structures for X and {gamma} imagery; Etude et realisation de nouvelles structures de detection a base de CdTe et CdZnTe pour l`imagerie X et {gamma}

Energy Technology Data Exchange (ETDEWEB)

Rosaz, M

1997-10-24

The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and {gamma}- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based {gamma}- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field`s non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and {gamma}- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and {gamma}- ray imaging. (author) 93 refs.

Study and development of new CdTe and CdZnTe detection structures for X and γ imagery

International Nuclear Information System (INIS)

Rosaz, M.

1997-01-01

The aim of this study is to show the interest of applying cadmium telluride (CdTe) for X- and γ- ray imaging applications, with specific technological (via contact nature) and geometric (via Frisch grids) structures suited for each application. This work is divided into three different but complementary parts: the first part describes a simulation model which allows a better understanding of CdTe based γ- ray detectors. The new feature of this model compared to previous ones, is that it is able to take into account the electric field's non uniform spatial distribution inside the detector s. The results enable us to de-convolute the influence of material and contact parameters on the spectrometric performances (energy resolution and peak/valley ratio) of CdTe based detectors; the second part presents different technological structures deposited upon CdTe, (grown by two different methods, i.e Bridgman and High Pressure Bridgman). These structures were characterised in X- and γ- ray detection; theoretical models are developed which allow a certain insight into the detection properties of each couple (material + contact); the third part deals with new contact geometries which allow a screening effect of the bulk (analogous to the Frisch grid effect in gaseous detectors) resulting in improved energy resolution and peak/valley ratios; encouraging first results on prototypes are presented and discussed. This work has allowed a better understanding of physical behaviour of CdTe based detectors, coupled with advances in technological issues to upgrade the overall performances of these detectors for application in X- and γ- ray imaging. (author)

Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

Energy Technology Data Exchange (ETDEWEB)

Sato, Goro, E-mail: gsato@astro.isas.jaxa.jp [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Fukuyama, Taro [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Watanabe, Shin; Ikeda, Hirokazu; Ohta, Masayuki; Ishikawa, Shin' nosuke [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Takahashi, Tadayuki [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Shiraki, Hiroyuki; Ohno, Ryoichi [ACRORAD Co., Ltd., 13-23 Suzaki, Uruma, Okinawa 904-2234 (Japan)

2011-10-01

Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

Applicability of a portable CdTe and NaI (Tl) spectrometer for activity measure

International Nuclear Information System (INIS)

Fernandes, Jaquiel Salvi

2005-02-01

In this work it was studied the application of an in situ gamma spectrometer (ROVER) of Amptek Inc., composed by a Cadmium Telluride detector (CdTe) of 3 mm x 3 mm x 1 mm and a 30 mm x 30 mm Sodium Iodide detector doped with Thallium [NaI (Tl)). The radioactive sources used were type pastille, sealed in aluminum and polyethylene, of 241 Am, 133 Ba, 152 Eu, 3 sources of 137 Cs and soil samples contaminated with 137 Cs. It was performed a factorial planning 2 3 to optimize the in situ spectrometry system. This way it was determined that the best temperature for CdTe crystal operation is -22, deg C, with Shaping Time of 3 μS and Rise Time Discrimination (RTD) with value 3. With the help of the certified radioactive sources, we determined the efficiency curve of the two detectors. The CdTe detector was positioned at the standard distance of 1 meter of the sources and also at 4.15 cm. The NaI (Tl) detector was also positioned at the standard distance of 1 meter of the sources and at 2.8 cm. Measures were performed to determine the Minimum Detectable Activity (MDA) for both detectors. For the pastille type sources, the 137 Cs MDA for the CdTe detector at 4.15 cm, analyzing the energy line of 32 keV, was 6 kBq and at 1 meter of the 137 Cs source, analyzing the line of 661.65 keV, the MDA was 67 kBq. For soil samples, CdTe detector at 4.15 cm presented a MDA of 693 kBq.kg-l for the line of 32 keV, and for the soil sample 7 Be content the MDA found was 2867 Bq.kg -1 at 4.15 cm. For the NaI (Tl) detector, analyzing the line of 661.65 keV, the 137 Cs MDA for pastille type source at 1 meter of distance was 7 kBq, and for soil sample at 2.8 cm the measured 137 Cs MDA was 71 Bq.kg -1 . For the soil sample 7 Be content, at 2.8 cm of the Nal (Tl) detector, the obtained MDA was 91 Bq.kg -1 . Due to the minimum detectable activities found for the two detectors, we concluded that the employed in situ gamma ray spectrometer system allows the quantification of 137 Cs and 7 Be

Diodes based on semi-insulating CdTe crystals with Mo/MoO{sub x} contacts for X- and γ-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Maslyanchuk, O.; Kulchynsky, V.; Solovan, M. [Chernivtsi National University, Chernivtsi (Ukraine); Gnatyuk, V. [Institute of Semiconductor Physics, NAS of Ukraine, Kyiv (Ukraine); Potiriadis, C. [Greek Atomic Energy Commission, Attiki (Greece); Kaissas, I. [Greek Atomic Energy Commission, Attiki (Greece); Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki (Greece); Brus, V. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

2017-03-15

This paper reports on the possible applications of molybdenum oxide (Mo/MoO{sub x}) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Applications of CdTe to nuclear medicine. Final report

International Nuclear Information System (INIS)

Entine, G.

1985-01-01

Uses of cadmium telluride (CdTe) nuclear detectors in medicine are briefly described. They include surgical probes and a system for measuring cerebral blood flow in the intensive care unit. Other uses include nuclear dentistry, x-ray exposure control, cardiology, diabetes, and the testing of new pharmaceuticals

Preliminary report on the development of a high resolution PET camera using semiconductor detectors

International Nuclear Information System (INIS)

Kikuchi, Yohei; Ishii, Keizo; Yamazaki, Hiromichi; Matsuyama, Shigeo; Yamaguchi, Takashi; Yamamoto, Yusuke; Sato, Takemi; Aoki, Yasushi; Aoki, Kenichi

2005-01-01

We are developing a PET camera using small semiconductor detectors, whose resolution is equivalent to the physical limit of spatial resolution. First, a coincidence system of 16 Schottky CdTe detectors of 0.5 mm width obtained a resolution of <1 mm and it was confirmed that the Schottky CdTe detector is suitable for high resolution PET. Next, the performance of a pair of 32 channel CdTe arrays (1.2 mm width per channel) was investigated for the development of the prototype of high resolution PET. The time resolution between opposing detector pair was 13 ns (FWHM) when high voltage (700 V) was applied. The image of a 0.6 mm diameter point source was obtained in an experiment with opposing detector arrays using four channels, indicating that, a higher resolution can be achieved with the 32 channel CdTe array

High-speed imaging at high x-ray energy: CdTe sensors coupled to charge-integrating pixel array detectors

Energy Technology Data Exchange (ETDEWEB)

Becker, Julian; Tate, Mark W.; Shanks, Katherine S.; Philipp, Hugh T.; Weiss, Joel T.; Purohit, Prafull [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Chamberlain, Darol [Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M., E-mail: smg26@cornell.edu [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States)

2016-07-27

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods <150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128×128 pixel array with (150 µm){sup 2} pixels.

Portable gamma- and X-ray analyzers based on CdTe p-i-n detectors

CERN Document Server

Khusainov, A K; Bahlanov, S V; Derbin, A V; Ivanov, V V; Lysenko, V V; Morozov, F; Mouratov, V G; Muratova, V N; Petukhov, Y A; Pirogov, A M; Polytsia, O P; Saveliev, V D; Solovei, V A; Yegorov, K A; Zhucov, M P

1999-01-01

Several portable instruments are designed using previously reported CdTe detector technology. These can be divided into three groups according to their energy ranges: (1) 3-30 keV XRF analyzers, (2) 5-120 keV wide range XRF analyzers and (3) gamma-ray spectrometers for operation up to 1500 keV. These instruments are used to inspect several hundreds of samples in situ during a working day in applications such as a metal alloy verification at customs control. Heavy metals are identified through a 3-100 mm thick package with these instruments. Surface contamination by heavy metals (for example toxins such as Hg, Th and Pb in housing environmental control), the determination of Pb concentration in gasoline, geophysical control in mining, or nuclear material control are other applications. The weight of these XRF probes is about 1 kg and two electronic designs are used: one with embedded computer and another based on a standard portable PC. The instruments have good precision and high productivity for measurements...

Schottky barrier CdTe(Cl) detectors for planetary missions

International Nuclear Information System (INIS)

Eisen, Yosef; Floyd, Samuel

2002-01-01

Schottky barrier cadmium telluride (CdTe) radiation detectors of dimensions 2mm x 2mm x 1mm and segmented monolithic 3cm x 3 cm x 1mm are under study at GSFC for future NASA planetary instruments. These instruments will perform x-ray fluorescence spectrometry of the surface and monitor the solar x-ray flux spectrum, the excitation source for the characteristic x-rays emitted from the planetary body. The Near Earth Asteroid Rendezvous (NEAR) mission is the most recent example of such a remote sensing technique. Its x-ray fluorescence detectors were gas proportional counters with a back up Si PIN solar monitor. Analysis of NEAR data has shown the necessity to develop a solar x-ray detector with efficiency extending to 30keV. Proportional counters and Si diodes have low sensitivity above 9keV. Our 2mm x 2mm x 1mm CdTe operating at -30 degree sign C possesses an energy resolution of 250eV FWHM for 55Fe with unit efficiency to up to 30keV. This is an excellent candidate for a solar monitor. Another ramification of the NEAR data is a need to develop a large area detector system, 20-30 cm2, with cosmic ray charged particle rejection, for measuring the characteristic radiation. A 3cm x 3cm x 1mm Schottky CdTe segmented monolithic detector is under investigation for this purpose. A tiling of 2-3 such detectors will result in the desired area. The favorable characteristics of Schottky CdTe detectors, the system design complexities when using CdTe and its adaptation to future missions will be discussed

Segmented-spectrum detection mechanism for medical x-ray in CdTe

Science.gov (United States)

Shi, Zaifeng; Meng, Qingzhen; Cao, Qingjie; Yao, Suying

2016-01-01

This paper presents a segmented X-ray spectrum detection method based on a layered X-ray detector in Cadmium Telluride (CdTe) substrate. We describe the three-dimensional structure of proposed detector pixel and investigate the matched spectrum-resolving method. Polychromatic X-ray beam enter the CdTe substrate edge on and will be absorbed completely in different thickness varying with photon energy. Discrete potential wells are formed under external controlling voltage to collect the photo-electrons generated in different layers, and segmented X-ray spectrum can be deduced from the quantity of photo-electrons. In this work, we verify the feasibility of the segmented-spectrum detection mechanism by simulating the absorption of monochromatic X-ray in a CdTe substrate. Experiments in simulation show that the number of photo-electrons grow exponentially with the increase of incident thickness, and photons with different energy will be absorbed in various thickness. The charges generated in different layers are collected into adjacent potential wells, and collection efficiency is estimated to be about 87% for different incident intensity under the 40000V/cm electric field. Errors caused by charge sharing between neighboring layers are also analyzed, and it can be considered negligible by setting appropriate size of electrodes.

Applicability of a portable CdTe and NaI (Tl) spectrometer for activity measure; Aplicabilidade de um espectrometro portatil de CdTe e NaI (Tl) para a medida da atividade de Cesio-137 ({sup 137}Cs) e Berilio-7 ({sup 7}Be)

Energy Technology Data Exchange (ETDEWEB)

Fernandes, Jaquiel Salvi

2005-02-15

In this work it was studied the application of an in situ gamma spectrometer (ROVER) of Amptek Inc., composed by a Cadmium Telluride detector (CdTe) of 3 mm x 3 mm x 1 mm and a 30 mm x 30 mm Sodium Iodide detector doped with Thallium [NaI (Tl)). The radioactive sources used were type pastille, sealed in aluminum and polyethylene, of {sup 241}Am, {sup 133}Ba, {sup 152}Eu, 3 sources of {sup 137}Cs and soil samples contaminated with {sup 137}Cs. It was performed a factorial planning 2{sup 3} to optimize the in situ spectrometry system. This way it was determined that the best temperature for CdTe crystal operation is -22, deg C, with Shaping Time of 3 {mu}S and Rise Time Discrimination (RTD) with value 3. With the help of the certified radioactive sources, we determined the efficiency curve of the two detectors. The CdTe detector was positioned at the standard distance of 1 meter of the sources and also at 4.15 cm. The NaI (Tl) detector was also positioned at the standard distance of 1 meter of the sources and at 2.8 cm. Measures were performed to determine the Minimum Detectable Activity (MDA) for both detectors. For the pastille type sources, the {sup 137}Cs MDA for the CdTe detector at 4.15 cm, analyzing the energy line of 32 keV, was 6 kBq and at 1 meter of the {sup 137}Cs source, analyzing the line of 661.65 keV, the MDA was 67 kBq. For soil samples, CdTe detector at 4.15 cm presented a MDA of 693 kBq.kg-l for the line of 32 keV, and for the soil sample {sup 7}Be content the MDA found was 2867 Bq.kg{sup -1} at 4.15 cm. For the NaI (Tl) detector, analyzing the line of 661.65 keV, the {sup 137}Cs MDA for pastille type source at 1 meter of distance was 7 kBq, and for soil sample at 2.8 cm the measured {sup 137}Cs MDA was 71 Bq.kg{sup -1}. For the soil sample {sup 7}Be content, at 2.8 cm of the Nal (Tl) detector, the obtained MDA was 91 Bq.kg{sup -1}. Due to the minimum detectable activities found for the two detectors, we concluded that the employed in situ gamma

CdTe ambulatory ventricular function monitor

International Nuclear Information System (INIS)

Lazewatsky, J.L.; Alpert, N.M.; Moore, R.H.; Boucher, C.A.; Strauss, H.W.

1979-01-01

A prototype device consisting of two arrays of CdTe detectors, ECG amplifiers and gate, microprocessor, and tape recorder was devised to record simultaneous ECG and radionuclide blood pool data from the left ventricle for extended periods during normal activity. The device is intended to record information concerning both normal and abnormal physiology of the heart and to permit the evaluation of new pharmaceuticals under everyday conditions. Preliminary results indicate that the device is capable of recording and reading out data from both phantoms and patients

Characterization of CdZnTe ambient temperature detectors

International Nuclear Information System (INIS)

Lavietes, A.

1994-09-01

A great deal of interest has been generated in the use of cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) detectors for ambient temperature detection of radionuclides. The addition of zinc to CdTe provides several benefits that enhance the materials operational characteristics at ambient temperature. Recent movement in the industry is to produce larger volume detectors using CdZnTe without much known about the effects of larger geometry on performance. The purpose of this study is to get an idea of the relationship of detector performance to both area and thickness variations

Polarization phenomena in Al/p-CdTe/Pt X-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Principato, F., E-mail: fabio.principato@unipa.it; Turturici, A.A.; Gallo, M.; Abbene, L.

2013-12-01

Over the last decades, CdTe detectors are widely used for the development of room temperature X-ray and gamma ray spectrometers. Typically, high resolution CdTe detectors are fabricated with blocking contacts (indium and aluminum) ensuring low leakage currents and high electric field for optimum charge collection. As well known, time instability under bias voltage (termed as polarization) is the major drawback of CdTe diode detectors. Polarization phenomena cause a progressive degradation of the spectroscopic performance with time, due to hole trapping and detrapping from deep acceptors levels. In this work, we studied the polarization phenomenon on new Al/p-CdTe/Pt detectors, manufactured by Acrorad (Japan), through electrical and spectroscopic approaches. In particular, we investigated on the time degradation of the spectroscopic response of the detectors at different temperatures, voltages and energies. Current transient measurements were also performed to better understand the properties of the deep acceptor levels and their correlation with the polarization effect.

About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

International Nuclear Information System (INIS)

Marin, E.; Calderon, A.; Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J.; Saucedo, E.; Ruiz, C.M.

2006-01-01

CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 μm, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10 3 cm -1 because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several growth

Development of a cadmium telluride pixel detector for astrophysical applications

Science.gov (United States)

Miyasaka, Hiromasa; Harrison, Fiona A.; Cook, Walter R.; Mao, Peter H.; Rana, Vikram R.; Ishikawa, Shin-Nosuke; Ushio, Masayoshi; Aono, Hiroyuki; Watanabe, Shin; Sato, Goro; Kokubun, Motohide; Takahashi, Tadayuki

2009-08-01

We are developing imaging Cadmium Telluride (CdTe) pixel detectors optimized for astrophysical hard X-ray applications. Our hybrid detector consist of a CdTe crystal 1mm thick and 2cm × 2cm in area with segmented anode contacts directly bonded to a custom low-noise application specific integrated circuit (ASIC). The CdTe sensor, fabricated by ACRORAD (Okinawa, Japan), has Schottky blocking contacts on a 605 micron pitch in a 32 × 32 array, providing low leakage current and enabling readout of the anode side. The detector is bonded using epoxy-gold stud interconnects to a custom low noise, low power ASIC circuit developed by Caltech's Space Radiation Laboratory. We have achieved very good energy resolution over a wide energy range (0.62keV FWHM @ 60keV, 10.8keV FWHM @ 662keV). We observe polarization effects at room temperature, but they are suppressed if we operate the detector at or below 0°C degree. These detectors have potential application for future missions such as the International X-ray Observatory (IXO).

Design and Performance of Soft Gamma-ray Detector for NeXT Mission

Science.gov (United States)

Tajima, H.; Kamae, T.; Madejski, G.; Takahashi, T.; Nakazawa, K.; Watanabe, S.; Mitani, T.; Tanaka, T.; Fukazawa, Y.; Kataoka, J.; Ikagawa, T.; Kokubun, M.; Makishima, K.; Terada, Y.; Nomachi, M.; Tashiro, M.

The Soft Gamma-ray Detector (SGD) on board NeXT (Japanese future high energy astrophysics mission) is a Compton telescope with narrow field of view, which utilizes Compton kinematics to enhance its background rejection capabilities. It is realized as a hybrid semiconductor gamma-ray detector which consists of silicon and Cadmium Telluride (CdTe) detectors. It can detect photons in an energy band 0.05-1 MeV at a background level of 5×10-7 counts/s/cm2/keV; the silicon layers are required to improve the performance at a lower energy band (development of key technologies to realize the SGD; high quality CdTe, low noise front-end VLSI and bump bonding technology. Energy resolutions of 1.7 keV (FWHM) for CdTe pixel detectors and 1.1 keV for silicon strip detectors have been measured. We also present the validation of Monte Carlo simulation used to evaluate the performance of the SGD.

An analytical X-ray CdTe detector response matrix for incomplete charge collection correction for photon energies up to 300 keV

Science.gov (United States)

Kurková, Dana; Judas, Libor

2018-05-01

Gamma and X-ray energy spectra measured with semiconductor detectors suffer from various distortions, one of them being so-called "tailing" caused by an incomplete charge collection. Using the Hecht equation, a response matrix of size 321 × 321 was constructed which was used to correct the effect of incomplete charge collection. The correction matrix was constructed analytically for an arbitrary energy bin and the size of the energy bin thus defines the width of the spectral window. The correction matrix can be applied separately from other possible spectral corrections or it can be incorporated into an already existing response matrix of the detector. The correction was tested and its adjustable parameters were optimized on the line spectra of 57Co measured with a cadmium telluride (CdTe) detector in a spectral range from 0 up to 160 keV. The best results were obtained when the values of the free path of holes were spread over a range from 0.4 to 1.0 cm and weighted by a Gauss function. The model with the optimized parameter values was then used to correct the line spectra of 152Eu in a spectral range from 0 up to 530 keV. An improvement in the energy resolution at full width at half maximum from 2.40 % ± 0.28 % to 0.96 % ± 0.28 % was achieved at 344.27 keV. Spectra of "narrow spectrum series" beams, N120, N150, N200, N250 and N300, generated with tube voltages of 120 kV, 150 kV, 200 kV, 250 kV and 300 kV respectively, and measured with the CdTe detector, were corrected in the spectral range from 0 to 160 keV (N120 and N150) and from 0 to 530 keV (N200, N250, N300). All the measured spectra correspond both qualitatively and quantitatively to the available reference data after the correction. To obtain better correspondence between N150, N200, N250 and N300 spectra and the reference data, lower values of the free paths of holes (range from 0.16 to 0.65 cm) were used for X-ray spectra correction, which suggests energy dependence of the phenomenon.

Spent-fuel characterization with small CZT detectors

Energy Technology Data Exchange (ETDEWEB)

Berndt, R. [European Commission, Joint Research Centre, Ispra, 21020 Ispra (Vatican City State, Holy See,) (Italy)]. E-mail: Reinhard.Berndt@jrc.it; Mortreau, P. [European Commission, Joint Research Centre, Ispra, 21020 Ispra (Va) (Italy)

2006-08-01

CdTe detectors may be utilised as miniature instruments for the measurement of gamma spectra in safeguards applications [R. Arlt, V. Gryshchuk, P. Sumah, Nucl. Instr. and Meth. A 428 (1999) 127]. This is applicable for measurements both to fresh fuel and irradiated nuclear fuel. The spectrum analysis, however, is more complicated than with Ge detectors. Some reasons are: the peaks are asymmetric, the peak/Compton ratio is low, peak parameters depend on the count rate and on the properties of individual detector crystals. We developed a spectrum-unfolding code for spectra obtained with CdTe detectors. The code makes use of a series of pattern spectra of the individual instrument. It is applied to fission-product spectra and allows the coarse characterisation of the spent fuel in safeguards inspections.

Spent-fuel characterization with small CZT detectors

International Nuclear Information System (INIS)

Berndt, R.; Mortreau, P.

2006-01-01

CdTe detectors may be utilised as miniature instruments for the measurement of gamma spectra in safeguards applications [R. Arlt, V. Gryshchuk, P. Sumah, Nucl. Instr. and Meth. A 428 (1999) 127]. This is applicable for measurements both to fresh fuel and irradiated nuclear fuel. The spectrum analysis, however, is more complicated than with Ge detectors. Some reasons are: the peaks are asymmetric, the peak/Compton ratio is low, peak parameters depend on the count rate and on the properties of individual detector crystals. We developed a spectrum-unfolding code for spectra obtained with CdTe detectors. The code makes use of a series of pattern spectra of the individual instrument. It is applied to fission-product spectra and allows the coarse characterisation of the spent fuel in safeguards inspections

Formation of self assembled PbTe quantum dots in CdTe on Si(111)

Science.gov (United States)

Felder, F.; Fognini, A.; Rahim, M.; Fill, M.; Müller, E.; Zogg, H.

2010-01-01

We describe the growth and formation of self assembled PbTe quantum dots in a CdTe host on a silicon (111) substrate. Annealing yields different photoluminescence spectra depending on initial PbTe layer thickness, thickness of the CdTe cap layer and annealing temperature. Generally two distinct emission peaks at ˜0.3 eV and ˜0.45 eV are visible. Model calculations explaining their temperature dependence are performed. The dot size corresponds well with the estimated sizes from electron microscopy images. The quantum dots may be used as absorber within a mid-infrared detector.

CdTe and Cd1-xZnxTe for nuclear detectors: facts and fictions

International Nuclear Information System (INIS)

Fougeres, P.; Siffert, P.; Hageali, M.; Koebel, J.M.; Regal, R.

1999-01-01

Both CdTe and Cd 1-x Zn x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and γ-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best

About the use of photoacoustic spectroscopy for the optical characterization of semiconductor thin films: CdTe

Energy Technology Data Exchange (ETDEWEB)

Marin, E.; Calderon, A. [CICATA-IPN, Av. Legaria 694, 11500 Mexico D.F. (Mexico); Vigil G, O.; Sastre, J.; Contreras P, G.; Aguilar H, J. [ESFM-IPN, 07738 Mexico D.F. (Mexico); Saucedo, E.; Ruiz, C.M. [Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid (Spain)

2006-07-01

CdTe has been used satisfactorily in multiple and diverse technological applications such as detectors of X and gamma rays that operate at room temperature, for digital imagenology of X rays with medical and industrial applications and as active part in CdTe/CdS solar cells. In form of films, CdTe is generally grown with thicknesses ranging between 3 and 15 {mu}m, for which it is difficult to measure, by means of optical techniques, absorption coefficients greater than 10{sup 3} cm{sup -1} because nearly full absorption of light should occur below 800 nm. The exact determination of the optical absorption coefficient in detectors on the basis of CdTe is very important since this parameter determines the absorption length at which 90% of the photons with energies over the forbidden zone of the CdTe will be absorbed by this. In CdS/CdTe polycrystalline solar cells the greater efficiency of conversion have been reported for film thicknesses of 10 mm, however, the optimal value of this parameter depends strongly on the method and the variables of growth. The optical absorption coefficient spectrum can be determined by several methods, often involving several approximations and the knowledge of some minority carrier related electronic parameters that reduce their application in general way. In this work we propose to determine the absorption coefficient in CdTe thin films by photoacoustic spectroscopy (PAS), because this technique allow us to obtain the optical absorption spectra in thicker layers and therefore the study of the influence of the several growth and post-growth processes in the optical properties of this thin films. We measure by PAS the optical-absorption coefficients of CdTe thin films in the spectral region near the fundamental absorption edge ranging from 1.0 to 2.4 eV using an open cell in the transmission configuration. The films were deposited on different substrates by the CSVT-HW (hot wall) technique. In order to study the influence of several

Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

Directory of Open Access Journals (Sweden)

Wagner Anacleto Pinheiro

2006-03-01

Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

Studies of crystalline CdZnTe radiation detectors and polycrystalline thin film CdTe for X-ray imaging applications

International Nuclear Information System (INIS)

Ede, Anthony

2001-01-01

The development of a replacement to the conventional film based X-ray imaging technique is required for many reasons. One possible route for this is the use of a large area film of a suitable semiconductor overlaid on an amorphous silicon readout array. A suitable semiconductor exists in cadmium telluride and its tertiary alloy cadmium zinc telluride. In this thesis the spectroscopic characteristics of commercially available CZT X- and γ-radiation detectors are established. The electronic, optical, electro-optic, structural and compositional properties of these detectors are then investigated. The attained data is used to infer a greater understanding for the carrier transport in a CZT radiation detector following the interaction of a high energy photon. Following this a method used to fabricate large area films of CdTe on a commercial scale is described. This is cathodic electrodeposition from an aqueous electrolyte. The theory and experimental arrangement for this technique are described in detail with preliminary results from the fabricated films presented. Attention is then turned to the CdS/CdTe films that are produced commercially for the photovoltaic industry. In this case the crystalline nature, surface topography and optical properties are investigated. A conclusion examines the progress that has been made towards the development of a large area fiat panel digital imaging technique. (author)

Self-Catalyzed CdTe Wires

Directory of Open Access Journals (Sweden)

Tom Baines

2018-04-01

Full Text Available CdTe wires have been fabricated via a catalyst free method using the industrially scalable physical vapor deposition technique close space sublimation. Wire growth was shown to be highly dependent on surface roughness and deposition pressure, with only low roughness surfaces being capable of producing wires. Growth of wires is highly (111 oriented and is inferred to occur via a vapor-solid-solid growth mechanism, wherein a CdTe seed particle acts to template the growth. Such seed particles are visible as wire caps and have been characterized via energy dispersive X-ray analysis to establish they are single phase CdTe, hence validating the self-catalysation route. Cathodoluminescence analysis demonstrates that CdTe wires exhibited a much lower level of recombination when compared to a planar CdTe film, which is highly beneficial for semiconductor applications.

CdTe layer structures for X-ray and gamma-ray detection directly grown on the Medipix readout-chip by MBE

Science.gov (United States)

Vogt, A.; Schütt, S.; Frei, K.; Fiederle, M.

2017-11-01

This work investigates the potential of CdTe semiconducting layers used for radiation detection directly deposited on the Medipix readout-chip by MBE. Due to the high Z-number of CdTe and the low electron-hole pair creation energy a thin layer suffices for satisfying photon absorption. The deposition takes place in a modified MBE system enabling growth rates up to 10 μm/h while the UHV conditions allow the required high purity for detector applications. CdTe sensor layers deposited on silicon substrates show resistivities up to 5.8 × 108 Ω cm and a preferred (1 1 1) orientation. However, the resistivity increases with higher growth temperature and the orientation gets more random. Additionally, the deposition of a back contact layer sequence in one process simplifies the complex production of an efficient contact on CdTe with aligned work functions. UPS measurements verify a decrease of the work function of 0.62 eV induced by Te doping of the CdTe.

Evaluation of the quality of semi-insulating CdTe for radiation detectors by measurement of lux-ampere characteristics

International Nuclear Information System (INIS)

Franc, J.; Kubat, J.; Grill, R.; Dedic, V.; Hlidek, P.; Moravec, P.; Belas, E.

2011-01-01

Accumulation of space charge on deep levels represents one of the major problems in fabrication of semi-insulating CdTe and CdZnTe X-ray and gamma-ray detectors, because it influences the applied electric field and can even result in a complete breakdown of the field in part of the sample (polarization and dead layer formation). The goal of the study was to evaluate possibilities of localization of areas of potential space charge accumulation in as grown crystals by steady state measurement of lux-ampere characteristics. All measurements were done at room temperature using He-Ne laser. Voltage was applied parallel to the direction of light propagation in the range 10-100 V. It was observed that all lux-ampere characteristics are sub-linear. Screening effects caused by space charge accumulated on deep levels explain these results. Crystals prepared by Vertical gradient freeze method in our laboratory are compared to a commercially available detector-grade sample prepared by Travelling heater method. Comparison of crystals grown from precursors of different starting purity shows an increase of the slope of lux-ampere characteristics with a decrease of impurity content. A correlation between the slope of lux-ampere characteristics and the mobility-lifetime product of electrons was observed, too.

Evaluation of the quality of semi-insulating CdTe for radiation detectors by measurement of lux-ampere characteristics

Science.gov (United States)

Franc, J.; Kubát, J.; Grill, R.; Dědič, V.; Hlídek, P.; Moravec, P.; Belas, E.

2011-05-01

Accumulation of space charge on deep levels represents one of the major problems in fabrication of semi-insulating CdTe and CdZnTe X-ray and gamma-ray detectors, because it influences the applied electric field and can even result in a complete breakdown of the field in part of the sample (polarization and dead layer formation). The goal of the study was to evaluate possibilities of localization of areas of potential space charge accumulation in as grown crystals by steady state measurement of lux-ampere characteristics. All measurements were done at room temperature using He-Ne laser. Voltage was applied parallel to the direction of light propagation in the range 10-100 V. It was observed that all lux-ampere characteristics are sub-linear. Screening effects caused by space charge accumulated on deep levels explain these results. Crystals prepared by Vertical gradient freeze method in our laboratory are compared to a commercially available detector-grade sample prepared by Travelling heater method. Comparison of crystals grown from precursors of different starting purity shows an increase of the slope of lux-ampere characteristics with a decrease of impurity content. A correlation between the slope of lux-ampere characteristics and the mobility-lifetime product of electrons was observed, too.

Design of a hybrid gas proportional counter with CdTe guard counters for sup 1 sup 4 C dating system

CERN Document Server

Zhang, L; Hinamoto, N; Nakazawa, M; Yoshida, K

2002-01-01

Nowadays uniform, low-cost and large-size compound semiconductor detectors are available up to several square centimeters. We are trying to combine this technology with conventional gas detectors to upgrade an anticoincidence type proportional counter, Oeschger-type thin wall counter of 2.2 l, used for a sup 1 sup 4 C dating facility at the University of Tokyo. In order to increase the ratio of the signal to the background for smaller quantity of samples less than 1 g, an effective approach is to minimize the detector volume at higher gas pressure. However, the anticoincidence function suffers from such a small volume. Therefore we designed a new active wall gas counter of 0.13 l counting volume using CdTe compound semiconductor detectors as the wall of the gas proportional counter to perform anticoincidence. Simulation study showed that at noise thresholds less than 70 keV, the wall counters can reject above 99.8% of events arising from outer gamma rays. Measured noise levels of CdTe detectors were smaller t...

Detectors - Electronics

International Nuclear Information System (INIS)

Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J.

1998-01-01

The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X → e - converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the 3 He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

Science.gov (United States)

Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

2017-08-01

In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

High Flux Energy-Resolved Photon-Counting X-Ray Imaging Arrays with CdTe and CdZnTe for Clinical CT

International Nuclear Information System (INIS)

Barber, William C.; Hartsough, Neal E.; Gandhi, Thulasidharan; Iwanczyk, Jan S.; Wessel, Jan C.; Nygard, Einar; Malakhov, Nail; Wawrzyniak, Gregor; Dorholt, Ole; Danielsen, Roar

2013-06-01

We have fabricated fast room-temperature energy dispersive photon counting x-ray imaging arrays using pixellated cadmium zinc (CdTe) and cadmium zinc telluride (CdZnTe) semiconductors. We have also fabricated fast application specific integrated circuits (ASICs) with a two dimensional (2D) array of inputs for readout from the CdZnTe sensors. The new CdTe and CdZnTe sensors have a 2D array of pixels with a 0.5 mm pitch and can be tiled in 2D. The new 2D ASICs have four energy discriminators per pixel with a linear energy response across the entire dynamic range for clinical CT. The ASICs can also be tiled in 2D and are designed to fit within the active area of the 2D sensors. We have measured several important performance parameters including; an output count rate (OCR) in excess of 20 million counts per second per square mm, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor less than 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdTE and CdZnTe sensors incurring very little additional capacitance. We present a comparison of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, and noise floor. (authors)

New imaging spectrometer CdTe very high spatial and spectral resolution for X and gamma astronomy

International Nuclear Information System (INIS)

Dubos, Sebastien

2015-01-01

The thesis work presented in this manuscript corresponds to the first development phase of the MC2 project, an ambitious R and D effort to realize a new type of cadmium telluride (CdTe) -based imaging spectrometer for future hard X- and gamma-rays astronomy missions. The final goal is to achieve a 300 micron-pitch pixelated detector plane hybridized with a very low noise front-end electronics for a total pixel density multiplied by 4 compared to the most advanced System recently available in the laboratory, the Caliste HD imaging spectrometer. Moreover, thanks to the joint development of readout circuits adapted to the interconnection of pixelated detectors with low capacitance and low leakage current, spectroscopic performances of such system are assumed to approach inherent limitations of the CdTe detector, especially for the lowest energies. The work was organized in parallel and complementary areas: evaluation of current Systems, feedback and identification of issues associated with the development of highly-resolved detection planes, implementation and complete characterization of a new two-dimensional ASIC specifically developed for this application, and modeling and study of the associated sensor to optimize the design of the detector pattern. Finally, a first hybrid prototype was completed and first experimental tests thereby conducted. (author) [fr

Photon Counting Energy Dispersive Detector Arrays for X-ray Imaging.

Science.gov (United States)

Iwanczyk, Jan S; Nygård, Einar; Meirav, Oded; Arenson, Jerry; Barber, William C; Hartsough, Neal E; Malakhov, Nail; Wessel, Jan C

2009-01-01

The development of an innovative detector technology for photon-counting in X-ray imaging is reported. This new generation of detectors, based on pixellated cadmium telluride (CdTe) and cadmium zinc telluride (CZT) detector arrays electrically connected to application specific integrated circuits (ASICs) for readout, will produce fast and highly efficient photon-counting and energy-dispersive X-ray imaging. There are a number of applications that can greatly benefit from these novel imagers including mammography, planar radiography, and computed tomography (CT). Systems based on this new detector technology can provide compositional analysis of tissue through spectroscopic X-ray imaging, significantly improve overall image quality, and may significantly reduce X-ray dose to the patient. A very high X-ray flux is utilized in many of these applications. For example, CT scanners can produce ~100 Mphotons/mm(2)/s in the unattenuated beam. High flux is required in order to collect sufficient photon statistics in the measurement of the transmitted flux (attenuated beam) during the very short time frame of a CT scan. This high count rate combined with a need for high detection efficiency requires the development of detector structures that can provide a response signal much faster than the transit time of carriers over the whole detector thickness. We have developed CdTe and CZT detector array structures which are 3 mm thick with 16×16 pixels and a 1 mm pixel pitch. These structures, in the two different implementations presented here, utilize either a small pixel effect or a drift phenomenon. An energy resolution of 4.75% at 122 keV has been obtained with a 30 ns peaking time using discrete electronics and a (57)Co source. An output rate of 6×10(6) counts per second per individual pixel has been obtained with our ASIC readout electronics and a clinical CT X-ray tube. Additionally, the first clinical CT images, taken with several of our prototype photon-counting and

Surface passivation for CdTe devices

Energy Technology Data Exchange (ETDEWEB)

Reese, Matthew O.; Perkins, Craig L.; Burst, James M.; Gessert, Timothy A.; Barnes, Teresa M.; Metzger, Wyatt K.

2017-08-01

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

Applications of CdTe to nuclear medicine. Annual report, February 1, 1979-January 31, 1980

International Nuclear Information System (INIS)

Entine, G.

1980-01-01

The application of CdTe gamma detectors in nuclear medicine is reported on. An internal probe was developed which can be inserted into the heart to measure the efficiency of various radiopharmaceuticals in the treatment of heart attacks. A second application is an array of detectors which is light enough to be worn by ambulatory patients and can measure the change in cardiac output over an eight hour period during heart attack treatment. The instrument includes an on board tape recorder

Depth of interaction and bias voltage depenence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays

Science.gov (United States)

Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Maneuski, D.; Marchal, J.; Norlin, B.; O'Shea, V.; Stewart, G.; Wilhelm, H.; Modh Zain, R.; Thungström, G.

2012-03-01

High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20μm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110μm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of \\texttildelow20 degrees to the surface and then passed through \\texttildelow25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field.

Development of a CZT drift ring detector for X and γ ray spectroscopy

Science.gov (United States)

Alruhaili, A.; Sellin, P. J.; Lohstroh, A.; Boothman, V.; Veeramani, P.; Veale, M. C.; Sawhney, K. J. S.; Kachkanov, V.

2015-04-01

CdTe and CZT detectors are considered better choices for high energy γ and X-ray spectroscopy in comparison to Si and HPGe detectors due to their good quantum efficiency and room temperature operation. The performance limitations in CdTe and CZT detectors are mainly associated with poor hole transport and trapping phenomena. Among many techniques that can be used to eliminate the effect of the poor charge transport properties of holes in CdTe and CZT material, the drift ring technique shows promising results. In this work, the performance of a 2.3 mm thick CZT drift ring detector is investigated. Spatially resolved measurements were carried out with an X-ray microbeam (25 and 75 keV) at the Diamond Light Source synchrotron to study the response uniformity and extent of the active area. Higher energy photon irradiation was also carried out at up to 662 keV using different radioisotopes to complement the microbeam data. Different biasing schemes were investigated in terms of biasing the cathode rear electrode (bulk field) and the ring electrodes (lateral fields). The results show that increasing the bulk field with fixed-ratio ring biases and lateral fields with fixed bulk fields increase the active area of the device significantly, which contrasts with previous studies in CdTe, where only an increasing lateral field resulted in an improvement of device performance. This difference is attributed to the larger thickness of the CZT device reported here.

A 2D 4×4 Channel Readout ASIC for Pixelated CdTe Detectors for Medical Imaging Applications.

Science.gov (United States)

Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Martínez, Ricardo; Puigdengoles, Carles

2015-10-01

We present a 16-channel readout integrated circuit (ROIC) with nanosecond-resolution time to digital converter (TDC) for pixelated Cadmium Telluride (CdTe) gamma-ray detectors. The 4 × 4 pixel array ROIC is the proof of concept of the 10 × 10 pixel array readout ASIC for positron-emission tomography (PET) scanner, positron-emission mammography (PEM) scanner, and Compton gamma camera. The electronics of each individual pixel integrates an analog front-end with switchable gain, an analog to digital converter (ADC), configuration registers, and a 4-state digital controller. For every detected photon, the pixel electronics provides the energy deposited in the detector with 10-bit resolution, and a fast trigger signal for time stamp. The ASIC contains the 16-pixel matrix electronics, a digital controller, five global voltage references, a TDC, a temperature sensor, and a band-gap based current reference. The ASIC has been fabricated with TSMC 0.25 μ m mixed-signal CMOS technology and occupies an area of 5.3 mm × 6.8 mm. The TDC shows a resolution of 95.5 ps, a precision of 600 ps at full width half maximum (FWHM), and a power consumption of 130 μ W. In acquisition mode, the total power consumption of every pixel is 200 μ W. An equivalent noise charge (ENC) of 160 e - RMS at maximum gain and negative polarity conditions has been measured at room temperature.

Caliste 64, an innovative CdTe hard X-ray micro-camera

International Nuclear Information System (INIS)

Meuris, A.; Limousin, O.; Pinsard, F.; Le Mer, I.; Lugiez, F.; Gevin, O.; Delagnes, E.; Vassal, M.C.; Soufflet, F.; Bocage, R.

2008-01-01

A prototype 64 pixel miniature camera has been designed and tested for the Simbol-X hard X-ray observatory to be flown on the joint CNES-ASI space mission in 2014. This device is called Caliste 64. It is a high performance spectro-imager with event time-tagging capability, able to detect photons between 2 keV and 250 keV. Caliste 64 is the assembly of a 1 or 2 min thick CdTe detector mounted on top of a readout module. CdTe detectors equipped with Aluminum Schottky barrier contacts are used because of their very low dark current and excellent spectroscopic performance. Front-end electronics is a stack of four IDeF-X V1.1 ASICs, arranged perpendicular to the detection plane, to read out each pixel independently. The whole camera fits in a 10 * 10 * 20 mm 3 volume and is juxtaposable on its four sides. This allows the device to be used as an elementary unit in a larger array of Caliste 64 cameras. Noise performance resulted in an ENC better than 60 electrons rms in average. The first prototype camera is tested at -10 degrees C with a bias of -400 V. The spectrum summed across the 64 pixels results in a resolution of 697 eV FWHM at 13.9 keV and 808 eV FWFM at 59.54 keV. (authors)

CdTe aggregates in KBr crystalline matrix

International Nuclear Information System (INIS)

Bensouici, A.; Plaza, J.L.; Dieguez, E.; Halimi, O.; Boudine, B.; Addala, S.; Guerbous, L.; Sebais, M.

2009-01-01

In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E g (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 deg. C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.

CdTe aggregates in KBr crystalline matrix

Energy Technology Data Exchange (ETDEWEB)

Bensouici, A., E-mail: bensouicia@yahoo.f [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria); Plaza, J.L., E-mail: joseluis.plaza@uam.e [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Dieguez, E. [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Halimi, O.; Boudine, B.; Addala, S. [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria); Guerbous, L. [Centre de recherche nucleaire d' Alger (CRNA), Alger 16000 (Algeria); Sebais, M. [Laboratory of Crystallography, Department of Physics, Mentouri-Constantine University, Constantine 25000 (Algeria)

2009-09-15

In this work, we report the experimental results on the fabrication and optical characterization of Czochralski (Cz) grown KBr single crystals doped with CdTe crystallites. The results of the optical absorption have shown two bands, the first one located at 250 nm demonstrates the incorporation of cadmium atoms in the KBr host followed by a partial chemical decomposition of CdTe, the second band located at 585 nm shows an optical response of CdTe aggregates. Photoluminescence spectra at room temperature before annealing showed a band located at 520 nm (2.38 eV), with a blue shift from the bulk gap of 0.82 eV (E{sub g} (CdTe)=1.56 eV). While the photoluminescence spectra after annealing at 600 deg. C showed a band situated at 640 nm (1.93 eV), these bands are due to band-to-band transitions of CdTe nanocrystals with a blue shift from the bulk gap at 0.38 eV. Blue shift in optical absorption and photoluminescence spectra confirm nanometric size of dopant. X-ray diffraction (XRD) spectra have shown the incorporation of CdTe aggregates in KBr.

Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

Energy Technology Data Exchange (ETDEWEB)

Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

2015-01-15

The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

Developing fine-pixel CdTe detectors for the next generation of high-resolution hard x-ray telescopes

Science.gov (United States)

Christe, Steven

Over the past decade, the NASA Marshall Space Flight Center (MSFC) has been improving the angular resolution of hard X-ray (HXR; 20 "70 keV) optics to the point that we now routinely manufacture optics modules with an angular resolution of 20 arcsec Half Power Diameter (HDP), almost three times the performance of NuSTAR optics (Ramsey et al. 2013; Gubarev et al. 2013a; Atkins et al. 2013). New techniques are currently being developed to provide even higher angular resolution. High angular resolution HXR optics require detectors with a large number of fine pixels in order to adequately sample the telescope point spread function (PSF) over the entire field of view. Excessively over-sampling the PSF will increase readout noise and require more processing with no appreciable increase in image quality. An appropriate level of over-sampling is to have 3 pixels within the HPD. For the HERO mirrors, where the HPD is 26 arcsec over a 6-m focal length converts to 750 μm, the optimum pixel size is around 250 μm. At a 10-m focal length these detectors can support a 16 arcsec HPD. Of course, the detectors must also have high efficiency in the HXR region, good energy resolution, low background, low power requirements, and low sensitivity to radiation damage (Ramsey 2001). The ability to handle high counting rates is also desirable for efficient calibration. A collaboration between Goddard Space Flight Center (GSFC), MSFC, and Rutherford Appleton Laboratory (RAL) in the UK is developing precisely such detectors under an ongoing, funded APRA program (FY2015 to FY2017). The detectors use the RALdeveloped Application Specific Integrated Circuit (ASIC) dubbed HEXITEC, for High Energy X-Ray Imaging Technology. These HEXITEC ASICs can be bonded to 1- or 2- mm-thick Cadmium Telluride (CdTe) or Cadmium-Zinc-Telluride (CZT) to create a fine (250 μm pitch) HXR detector (Jones et al. 2009; Seller et al. 2011). The objectives of this funded effort are to develop and test a HEXITEC

Detectors - Electronics; Detecteurs - Electronique

Energy Technology Data Exchange (ETDEWEB)

Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J. [Lab. de Physique Corpusculaire, Caen Univ., 14 (France)

1998-04-01

The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X {yields} e{sup -} converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the {sup 3}He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

Radiation effects on II-VI compound-based detectors

CERN Document Server

Cavallini, A; Dusi, W; Auricchio, N; Chirco, P; Zanarini, M; Siffert, P; Fougeres, P

2002-01-01

The performance of room temperature CdTe and CdZnTe detectors exposed to a radiation source can be strongly altered by the interaction of the ionizing particles and the material. Up to now, few experimental data are available on the response of II-VI compound detectors to different types of radiation sources. We have carried out a thorough investigation on the effects of gamma-rays, neutrons and electron irradiation both on CdTe : Cl and Cd sub 0 sub . sub 9 Zn sub 0 sub . sub 1 Te detectors. We have studied the detector response after radiation exposure by means of dark current measurements and of quantitative spectroscopic analyses at low and medium energies. The deep traps present in the material have been characterized by means of PICTS (photo-induced current transient spectroscopy) analyses, which allow to determine the trap apparent activation energy and capture cross-section. The evolution of the trap parameters with increasing irradiation doses has been monitored for all the different types of radiati...

Semidetector-radiation detector arrangement, as well as its application in a tomographic scanner, in a device to determine radiation intensity or to measure the radiation penetration or absorption

International Nuclear Information System (INIS)

Kaufman, L.; Hosier, K.E. Jr.

1979-01-01

The CdTe detector or a plate with several CdTe or HgI 2 detectors is suitable for use in computer controlled tomographic X-ray scanners. The detector is used in connection with a pulsed radiation source (Am 241) and a frequency filter technique for measuring the resulting electrical charge pulse of the detector. Merely a narrow frequency band is selected according to the measured duration of the incident radiation pulses. (DG) [de

Medipix2 based CdTe microprobe for dental imaging

International Nuclear Information System (INIS)

Vykydal, Z; Jakubek, J; Fauler, A; Fiederle, M; Zwerger, A; Svestkova, M

2011-01-01

Medical imaging devices and techniques are demanded to provide high resolution and low dose images of samples or patients. Hybrid semiconductor single photon counting devices together with suitable sensor materials and advanced techniques of image reconstruction fulfil these requirements. In particular cases such as the direct observation of dental implants also the size of the imaging device itself plays a critical role. This work presents the comparison of 2D radiographs of tooth provided by a standard commercial dental imaging system (Gendex 765DC X-ray tube with VisualiX scintillation detector) and two Medipix2 USB Lite detectors one equipped with a Si sensor (300 μm thick) and one with a CdTe sensor (1 mm thick). Single photon counting capability of the Medipix2 device allows virtually unlimited dynamic range of the images and thus increases the contrast significantly. The dimensions of the whole USB Lite device are only 15 mm × 60 mm of which 25% consists of the sensitive area. Detector of this compact size can be used directly inside the patients' mouth.

Photosensitive space charge limited current in screen printed CdTe thin films

Science.gov (United States)

Vyas, C. U.; Pataniya, Pratik; Zankat, Chetan K.; Patel, Alkesh B.; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

2018-05-01

Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.

Imaging performance comparison between a LaBr3: Ce scintillator based and a CdTe semiconductor based photon counting compact gamma camera.

Science.gov (United States)

Russo, P; Mettivier, G; Pani, R; Pellegrini, R; Cinti, M N; Bennati, P

2009-04-01

The authors report on the performance of two small field of view, compact gamma cameras working in single photon counting in planar imaging tests at 122 and 140 keV. The first camera is based on a LaBr3: Ce scintillator continuous crystal (49 x 49 x 5 mm3) assembled with a flat panel multianode photomultiplier tube with parallel readout. The second one belongs to the class of semiconductor hybrid pixel detectors, specifically, a CdTe pixel detector (14 x 14 x 1 mm3) with 256 x 256 square pixels and a pitch of 55 microm, read out by a CMOS single photon counting integrated circuit of the Medipix2 series. The scintillation camera was operated with selectable energy window while the CdTe camera was operated with a single low-energy detection threshold of about 20 keV, i.e., without energy discrimination. The detectors were coupled to pinhole or parallel-hole high-resolution collimators. The evaluation of their overall performance in basic imaging tasks is presented through measurements of their detection efficiency, intrinsic spatial resolution, noise, image SNR, and contrast recovery. The scintillation and CdTe cameras showed, respectively, detection efficiencies at 122 keV of 83% and 45%, intrinsic spatial resolutions of 0.9 mm and 75 microm, and total background noises of 40.5 and 1.6 cps. Imaging tests with high-resolution parallel-hole and pinhole collimators are also reported.

CdTe Photovoltaics for Sustainable Electricity Generation

Science.gov (United States)

Munshi, Amit; Sampath, Walajabad

2016-09-01

Thin film CdTe (cadmium telluride) is an important technology in the development of sustainable and affordable electricity generation. More than 10 GW of installations have been carried out using this technology around the globe. It has been demonstrated as a sustainable, green, renewable, affordable and abundant source of electricity. An advanced sublimation tool has been developed that allows highly controlled deposition of CdTe films onto commercial soda lime glass substrates. All deposition and treatment steps can be performed without breaking the vacuum within a single chamber in an inline process that can be conveniently scaled to a commercial process. In addition, an advanced cosublimation source has been developed to allow the deposition of ternary alloys such as Cd x Mg1- x Te to form an electron reflector layer which is expected to address the voltage deficits in current CdTe devices and to achieve very high efficiency. Extensive materials characterization, including but not limited to scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy, high resolution transmission electron microscopy and electron back-scatter diffraction, has been performed to get a better understanding of the effects of processing conditions on CdTe thin film photovoltaics. This combined with computer modeling such as density function theory modeling gives a new insight into the mechanism of CdTe photovoltaic function. With all these efforts, CdTe photovoltaics has seen great progress in the last few years. Currently, it has been recorded as the cheapest source of electricity in the USA on a commercial scale, and further improvements are predicted to further reduce the cost while increasing its utilization. Here, we give an overview of the advantages of thin film CdTe photovoltaics as well as a brief review of the challenges that need to be addressed. Some fundamental studies of processing conditions for thin film CdTe are also presented

Caliste 64, an innovative CdTe hard X-ray micro-camera

Energy Technology Data Exchange (ETDEWEB)

Meuris, A.; Limousin, O.; Pinsard, F.; Le Mer, I. [CEA Saclay, DSM, DAPNIA, Serv. Astrophys., F-91191 Gif sur Yvette (France); Lugiez, F.; Gevin, O.; Delagnes, E. [CEA Saclay, DSM, DAPNIA, Serv. Electron., F-91191 Gif sur Yvette (France); Vassal, M.C.; Soufflet, F.; Bocage, R. [3D-plus Company, F-78532 Buc (France)

2008-07-01

A prototype 64 pixel miniature camera has been designed and tested for the Simbol-X hard X-ray observatory to be flown on the joint CNES-ASI space mission in 2014. This device is called Caliste 64. It is a high performance spectro-imager with event time-tagging capability, able to detect photons between 2 keV and 250 keV. Caliste 64 is the assembly of a 1 or 2 min thick CdTe detector mounted on top of a readout module. CdTe detectors equipped with Aluminum Schottky barrier contacts are used because of their very low dark current and excellent spectroscopic performance. Front-end electronics is a stack of four IDeF-X V1.1 ASICs, arranged perpendicular to the detection plane, to read out each pixel independently. The whole camera fits in a 10 * 10 * 20 mm{sup 3} volume and is juxtaposable on its four sides. This allows the device to be used as an elementary unit in a larger array of Caliste 64 cameras. Noise performance resulted in an ENC better than 60 electrons rms in average. The first prototype camera is tested at -10 degrees C with a bias of -400 V. The spectrum summed across the 64 pixels results in a resolution of 697 eV FWHM at 13.9 keV and 808 eV FWFM at 59.54 keV. (authors)

High-quality CdTe films from nanoparticle precursors

Energy Technology Data Exchange (ETDEWEB)

Schulz, D.L.; Pehnt, M.; Urgiles, E. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

In this paper the authors demonstrate that nanoparticulate precursors coupled with spray deposition offers an attractive route into electronic materials with improved smoothness, density, and lower processing temperatures. Employing a metathesis approach, cadmium iodide was reacted with sodium telluride in methanol solvent, resulting in the formation of soluble NaI and insoluble CdTe nanoparticles. After appropriate chemical workup, methanol-capped CdTe colloids were isolated. CdTe thin film formation was achieved by spray depositing the nanoparticle colloids (25-75 {Angstrom} diameter) onto substrates at elevated temperatures (T = 280-440{degrees}C) with no further thermal treatment. These films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Cubic CdTe phase formation was observed by XRD, with a contaminant oxide phase also detected. XPS analysis showed that CdTe films produced by this one-step method contained no Na or C and substantial O. AFM gave CdTe grain sizes of {approx}0.1-0.3 {mu}m for film sprayed at 400{degrees}C. A layer-by-layer film growth mechanism proposed for the one-step spray deposition of nanoparticle precursors will be discussed.

Growth and analysis of micro and nano CdTe arrays for solar cell applications

Science.gov (United States)

Aguirre, Brandon Adrian

CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ˜20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 V through an increase in the carrier lifetime and concentration to tau >10 ns and p > 10 16 cm-3, respectively. However, the large lattice mismatch (10%) between CdTe and CdS and the polycrystalline nature of the CdTe film are the fundamental reasons for the high defect density and pose a difficult challenge to solve. In this work, a method to physically and electrically isolate the different kinds of defects at the nanoscale and understand their effect on the electrical performance of CdTe is presented. A SiO2 template with arrays of window openings was deposited between the CdTe and CdS to achieve selective-area growth of the CdTe via close-space sublimation. The diameter of the window openings was varied from the micro to the nanoscale to study the effect of size on nucleation, grain growth, and defect density. The resulting structures enabled the possibility to electrically isolate and individually probe micrometer and nanoscale sized CdTe/CdS cells. Electron back-scattered diffraction was used to observe grain orientation and defects in the miniature cells. Scanning and transmission electron microscopy was used to study the morphology, grain boundaries, grain orientation, defect structure, and strain in the layers. Finally, conducting atomic force microscopy was used to study the current-voltage characteristics of the solar cells. An

Design Strategies for High-Efficiency CdTe Solar Cells

Science.gov (United States)

Song, Tao

With continuous technology advances over the past years, CdTe solar cells have surged to be a leading contributor in thin-film photovoltaic (PV) field. While empirical material and device optimization has led to considerable progress, further device optimization requires accurate device models that are able to provide an in-depth understanding of CdTe device physics. Consequently, this thesis is intended to develop a comprehensive model system for high-efficiency CdTe devices through applying basic design principles of solar cells with numerical modeling and comparing results with experimental CdTe devices. The CdTe absorber is central to cell performance. Numerical simulation has shown the feasibility of high energy-conversion efficiency, which requires both high carrier density and long minority carrier lifetime. As the minority carrier lifetime increases, the carrier recombination at the back surface becomes a limitation for cell performance with absorber thickness cell performance, since it can induce a large valence-band bending which suppresses the hole injection near the interface for the electron-hole recombination, but too large a spike is detrimental to photocurrent transport. In a heterojunction device with many defects at the emitter/absorber interface (high SIF), a thin and highly-doped emitter can induce strong absorber inversion and hence help maintain good cell performance. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. In terms of specific emitter materials, the calculations suggest that the (Mg,Zn)O alloy with 20% Mg, or a similar type-I heterojunction partner with moderate DeltaE C (e.g., Cd(S,O) or (Cd,Mg)Te with appropriate oxygen or magnesium ratios) should yield higher voltages and would therefore be better candidates for the CdTe-cell emitter. The CdTe/substrate interface is also of great importance, particularly in the growth of epitaxial

Linear and mass attenuation coefficient for CdTe compound of X-rays from 10 to 100 keV energy range in different phases

Energy Technology Data Exchange (ETDEWEB)

Saim, A., E-mail: saim1989asma@gmail.com; Tebboune, A.; Berkok, H.; Belameiri, N.; Belbachir, A.H.

2014-07-25

The Full Potential Linear Muffin Tin Orbitals method within the density functional theory has been utilized to calculate structural and electronic properties of the CdTe compound. We have checked that the CdTe has two phase-transitions from zinc-blend to cinnabar and from cinnabar to rocksalt. We have found that the rigidity, the energy and the nature of the gap change according to the phase change, so we can predict that a CdTe detector may have different behaviors in different phase conditions. In order to investigate this behavior change, the linear and the mass attenuation coefficients of X-ray in rocksalt, zinc-blend and cinnabar structures are calculated from 10 keV to100 keV, using the XCOM data. We have found that when CdTe undergoes a phase transition from zinc-blend to cinnabar, its linear attenuation coefficient decreases down to a value of about 100 times smaller than its initial one, and when it undergoes a transition from cinnabar to rocksalt it increases up to a value about 90 times larger than its initial one.

The semi-conductor detectors: art state, new concepts

International Nuclear Information System (INIS)

Pochet, T.

1993-01-01

After a brief recall of signal formation principle in a detector and of its different operation modes, the high Z materials as CdTe, HgI 2 , GaAs ,Ge and Si are presented, followed by the new 'thin layer' semiconductors

Fractal features of CdTe thin films grown by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

2015-12-01

Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

Fractal features of CdTe thin films grown by RF magnetron sputtering

International Nuclear Information System (INIS)

Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

2015-01-01

Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

CERN Document Server

Zang, A; Ballabriga, R; Bisello, F; Campbell, M; Celi, J C; Fauler, A; Fiederle, M; Jensch, M; Kochanski, N; Llopart, X; Michel, N; Mollenhauer, U; Ritter, I; Tennert, F; Wölfel, S; Wong, W; Michel, T

2015-01-01

The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation wa...

Characterization and photoluminescence studies of CdTe ...

Indian Academy of Sciences (India)

Administrator

Abstract. The major objective of this work was to detect the change of photoluminescence (PL) intensity of. CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electro- spinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-.

CdTe and Cd sub 1 sub - sub x Zn sub x Te for nuclear detectors: facts and fictions

CERN Document Server

Fougeres, P; Hageali, M; Koebel, J M; Regal, R

1999-01-01

Both CdTe and Cd sub 1 sub - sub x Zn sub x Te (CZT) can be considered from their physical properties as very good materials for room temperature X- and gamma-rays detection. However, despite years of intense material research, no significant advance has been made to help one to choose between both semiconductors. This paper reviews a few facts about CdTe and CZT to attempt to draw a real comparison between both. THM-CdTe and HPB-CZT have been grown and characterized in Strasbourg. Crystal growth, alloying effects, transport properties and defects are reviewed on the basis of our results and the published ones. The results show that it is still very difficult to claim which one is the best.

X-ray spectroscopy and dosimetry with a portable CdTe device

International Nuclear Information System (INIS)

Abbene, Leonardo; La Manna, Angelo; Fauci, Francesco; Gerardi, Gaetano; Stumbo, Simone; Raso, Giuseppe

2007-01-01

X-ray spectra and dosimetry information are very important for quality assurance (QA) and quality control (QC) in medical diagnostic X-ray systems. An accurate knowledge of the diagnostic X-ray spectra would improve the patient dose optimization, without compromising image information. In this work, we performed direct diagnostic X-ray spectra measurements with a portable device, based on a CdTe solid-state detector. The portable device is able to directly measure X-ray spectra at high photon fluence rates, as typical of clinical radiography. We investigated on the spectral performances of the system in the mammographic energy range (up to ∼40 keV). Good system response to monoenergetic photons was measured (energy resolution of 5% FWHM at 22.1 keV). We measured the molybdenum X-ray spectra produced by a mammographic X-ray unit (GE Senographe DMR) at 28 kV and 30 kV under clinical conditions. The results showed the good reproducibility of the system and low pile-up distortions. Preliminary dosimetric measurements have been regarded as exposure and half value layer (HVL) values obtained from direct measurements and from measured X-ray spectral data, and a good agreement between exposure attenuation curves and the HVL values was obtained. The results indicated that the portable device is suitable for mammographic X-ray spectroscopy under clinical conditions

Spectral correction algorithm for multispectral CdTe x-ray detectors

DEFF Research Database (Denmark)

Christensen, Erik D.; Kehres, Jan; Gu, Yun

2017-01-01

Compared to the dual energy scintillator detectors widely used today, pixelated multispectral X-ray detectors show the potential to improve material identification in various radiography and tomography applications used for industrial and security purposes. However, detector effects, such as charge...

Toward VIP-PIX: A Low Noise Readout ASIC for Pixelated CdTe Gamma-Ray Detectors for Use in the Next Generation of PET Scanners.

Science.gov (United States)

Macias-Montero, Jose-Gabriel; Sarraj, Maher; Chmeissani, Mokhtar; Puigdengoles, Carles; Lorenzo, Gianluca De; Martínez, Ricardo

2013-08-01

VIP-PIX will be a low noise and low power pixel readout electronics with digital output for pixelated Cadmium Telluride (CdTe) detectors. The proposed pixel will be part of a 2D pixel-array detector for various types of nuclear medicine imaging devices such as positron-emission tomography (PET) scanners, Compton gamma cameras, and positron-emission mammography (PEM) scanners. Each pixel will include a SAR ADC that provides the energy deposited with 10-bit resolution. Simultaneously, the self-triggered pixel which will be connected to a global time-to-digital converter (TDC) with 1 ns resolution will provide the event's time stamp. The analog part of the readout chain and the ADC have been fabricated with TSMC 0.25 μ m mixed-signal CMOS technology and characterized with an external test pulse. The power consumption of these parts is 200 μ W from a 2.5 V supply. It offers 4 switchable gains from ±10 mV/fC to ±40 mV/fC and an input charge dynamic range of up to ±70 fC for the minimum gain for both polarities. Based on noise measurements, the expected equivalent noise charge (ENC) is 65 e - RMS at room temperature.

Development of a two-dimensional ASIC for hard X-ray spectroscopy and imaging with a CdTe pixel detector

International Nuclear Information System (INIS)

Hiruta, Tatsuro; Tamura, K.; Ikeda, H.; Nakazawa, K.; Takasima, T.; Takahashi, T.

2006-01-01

We are developing a two-dimensional analog ASIC for the readout of pixel sensors based on silicon (Si) or cadmium telluride (CdTe) for spectroscopic imaging observations in the X-ray and gamma-ray regions. The aim for the ASIC is to obtain a low-noise performance better than 100 electrons (rms) with self-triggering capabilities. As the first step of prototyping, we have fabricated several ASICs. We obtained an energy resolution of 5.4 keV (FWHM) for 81 keV gamma-rays from 133 Ba with a one-dimensional ASIC connected to a CdTe diode and also verified a readout architecture via a two-dimensional ASIC with 144 pixel channels. Based on the results obtained and experience gained through prototype ASICs, we are developing a 4096-channel two-dimensional analog ASIC

Interaction of porphyrins with CdTe quantum dots

International Nuclear Information System (INIS)

Zhang Xing; Liu Zhongxin; Ma Lun; Hossu, Marius; Chen Wei

2011-01-01

Porphyrins may be used as photosensitizers for photodynamic therapy, photocatalysts for organic pollutant dissociation, agents for medical imaging and diagnostics, applications in luminescence and electronics. The detection of porphyrins is significantly important and here the interaction of protoporphyrin-IX (PPIX) with CdTe quantum dots was studied. It was observed that the luminescence of CdTe quantum dots was quenched dramatically in the presence of PPIX. When CdTe quantum dots were embedded into silica layers, almost no quenching by PPIX was observed. This indicates that PPIX may interact and alter CdTe quantum dots and thus quench their luminescence. The oxidation of the stabilizers such as thioglycolic acid (TGA) as well as the nanoparticles by the singlet oxygen generated from PPIX is most likely responsible for the luminescence quenching. The quenching of quantum dot luminescence by porphyrins may provide a new method for photosensitizer detection.

Ellipsometry of rough CdTe(211)B-Ge(211) surfaces grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Badano, Giacomo; Ballet, Philippe; Zanatta, Jean-Paul; Baudry, Xavier; Million, Alain; Garland, James W.

2006-01-01

The effect of surface roughness on the ellipsometric response of semiconductor surfaces is investigated. CdTe(211)B layers were grown on Ge(211) by molecular beam epitaxy using less than optimal growth conditions to enhance the formation of surface roughness. Their optical properties, measured by rotating-compensator ellipsometry, showed small but significant sample-to-sample differences not explainable in terms of nanometer-scale roughness. A critical-point analysis established that the critical-point structure of the dielectric function was the same for all samples. This result suggested that the observed sample-to-sample variations were due to macroscopic roughness, which scatters off-specular light into the detector, thereby causing errors. We introduced tentative corrections for off-specular reflection that fitted the observed differences and thus supported the idea that off-specular reflection was responsible for the observed differences. These results were obtained using CdTe but are easily extensible to other rough opaque materials

The effect of excitons on CdTe solar cells

International Nuclear Information System (INIS)

Karazhanov, S. Zh.; Zhang, Y.; Mascarenhas, A.; Deb, S.

2000-01-01

Temperature and doping-level dependence of CdTe solar cells is investigated, taking into account the involvement of excitons on photocurrent transport. We show that the density of excitons in CdTe is comparable with that of minority carriers at doping levels ≥10 15 cm -3 . From the investigation of the dark-saturation current, we show that the product of electron and hole concentrations at equilibrium is several orders of magnitude more than the square of the intrinsic carrier concentration. With this assumption, we have studied the effect of excitons on CdTe solar cells, and the effect is negative. CdTe solar cell performance with excitons included agrees well with existing experimental results. (c) 2000 American Institute of Physics

Photostimulated changes of properties of CdTe films

Energy Technology Data Exchange (ETDEWEB)

Dzhafarov, T.D. [Institute of Physics, Azerbaijan National Academy of Sciences, AZ-1143 Baku (Azerbaijan); Yesilkaya, S.S. [Department of Physics, Yildiz Technical University, 34210 Esenler/Istanbul (Turkey)

2007-08-15

The effect of illumination during the close-spaced sublimation (CSS) growth on composition, structural, electrical, optical and photovoltaic properties of CdTe films and CdTe/CdS solar cells were investigated. Data on comparative study by using X-ray diffraction (XRD), scanning electron microscopy (SEM), absorption spectra and conductivity-temperature measurements of CdTe films prepared by CSS method in dark (CSSD) and under illumination (CSSI) were presented. It is shown that the growth rate and the grain size of CdTe films grown under illumination is higher (by factor about of 1.5 and 3 respectively) than those for films prepared without illumination. The energy band gap of CdTe films fabricated by both technology, determined from absorption spectra, is same (about of 1.50 eV), however conductivity of the CdTe films produced by CSSI is considerably greater (by factor of 10{sup 7}) than that of films prepared by CSSD. The photovoltaic parameters of pCdTe/nCdS solar cells fabricated by photostimulated CSSI technology (J{sub sc}=28 mA/cm{sup 2}, V{sub oc}=0.63 V) are considerably larger than those for cells prepared by CSSD method (J{sub sc}=22 mA/cm{sup 2}, V{sub oc}=0.52 V). A mechanism of photostimulated changes of properties of CdTe films and improvement of photovoltaic parameters of CdTe/CdS solar cells is suggested. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Growth of CdTe: Al films; Crecimiento de peliculas de CdTe: Al

Energy Technology Data Exchange (ETDEWEB)

Gonzalez A, M.; Zapata T, M. [CICATA-IPN, 89600 Altamira, Tamaulipas (Mexico); Melendez L, M. [CINVESTAV-IPN, A.P. 14-740, 07000 Mexico D.F. (Mexico); Pena, J.L. [CINVESTAV-IPN, A.P. 73 Cordemex, 97310 Merida, Yucatan (Mexico)

2006-07-01

CdTe: AI films were grown by the close space vapor transport technique combined with free evaporation (CSVT-FE). The Aluminum (Al) evaporation was made by two kinds of sources: one made of graphite and the other of tantalum. The films were deposited on glass substrates. The Al source temperature was varied maintaining the CdTe source temperature fixed as well as the substrate temperature. The films were characterized by x-ray energy dispersive analysis (EDAX), x-ray diffraction and optical transmission. The results showed for the films grown with the graphite source for Al evaporation, the Al did not incorporate in the CdTe matrix, at least to the level of EDAX sensitivity; they maintained the same crystal structure and band gap. For the samples grown with the tantalum source, we were able to incorporate the Al. The x-ray diffraction patterns show that the films have a crystal structure that depends on Al concentration. They were cubic up to 2.16 at. % Al concentration; for 19.65 at. % we found a mixed phase; for Al concentration higher than 21 at. % the films were amorphous. For samples with cubic structure it was found that the lattice parameter decreases and the band gap increases with Al concentration. (Author)

On the doping problem of CdTe films: The bismuth case

Energy Technology Data Exchange (ETDEWEB)

Vigil-Galan, O. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Brown, M. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Ruiz, C.M. [Depto. Fisica de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Vidal-Borbolla, M.A. [Instituto de Investigacion en Comunicacion Optica, Av. Karakorum 1470, Lomas 4a. Secc., 78210 San Luis Potosi, SLP (Mexico); Ramirez-Bon, R. [CINVESTAV-IPN, U. Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico); Sanchez-Meza, E. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Tufino-Velazquez, M. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)], E-mail: mtufinovel@yahoo.com.mx; Calixto, M. Estela [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico); Compaan, A.D. [Department of Physics and Astronomy, The University of Toledo, 43606 Toledo, OH (United States); Contreras-Puente, G. [Escuela Superior de Fisica y Matematicas del IPN, Edif. 9, UPALM, 07738 Mexico, D. F. (Mexico)

2008-08-30

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10{sup 13} cm{sup -3}, depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10{sup 15} cm{sup -3}. Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented.

On the doping problem of CdTe films: The bismuth case

International Nuclear Information System (INIS)

Vigil-Galan, O.; Brown, M.; Ruiz, C.M.; Vidal-Borbolla, M.A.; Ramirez-Bon, R.; Sanchez-Meza, E.; Tufino-Velazquez, M.; Calixto, M. Estela; Compaan, A.D.; Contreras-Puente, G.

2008-01-01

The controlled increase of hole concentration is an important issue and still an unsolved problem for polycrystalline CdTe-based solar cells. The typical hole concentration of as-grown CdTe thin-films goes up to 10 13 cm -3 , depending on the specific growth technique. The highest electron concentration obtained for CdS, the suitable window partner material of CdTe, is around 10 15 cm -3 . Thus, the PV-performance of a CdS/CdTe device can be optimized if the hole concentration in CdTe is increased. We have faced up this problem by studying the electrical properties of two types of CdTe films: CdTe films grown by Close Space Vapor Transport using a CdTe:Bi powder as the starting material and CdTe sputtered films doped by implantation with different Bi-doses. Temperature-dependent resistivity and Hall effect measurements and a discussion on the efficiency of both doping processes are presented

Radiative and interfacial recombination in CdTe heterostructures

Energy Technology Data Exchange (ETDEWEB)

Swartz, C. H., E-mail: craig.swartz@txstate.edu; Edirisooriya, M.; LeBlanc, E. G.; Noriega, O. C.; Jayathilaka, P. A. R. D.; Ogedengbe, O. S.; Hancock, B. L.; Holtz, M.; Myers, T. H. [Materials Science, Engineering, and Commercialization Program, Texas State University, 601 University Dr., San Marcos, Texas 78666 (United States); Zaunbrecher, K. N. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Mississippi RSF200, Golden, Colorado 80401 (United States)

2014-12-01

Double heterostructures (DH) were produced consisting of a CdTe film between two wide band gap barriers of CdMgTe alloy. A combined method was developed to quantify radiative and non-radiative recombination rates by examining the dependence of photoluminescence (PL) on both excitation intensity and time. The measured PL characteristics, and the interface state density extracted by modeling, indicate that the radiative efficiency of CdMgTe/CdTe DHs is comparable to that of AlGaAs/GaAs DHs, with interface state densities in the low 10{sup 10 }cm{sup −2} and carrier lifetimes as long as 240 ns. The radiative recombination coefficient of CdTe is found to be near 10{sup −10} cm{sup 3}s{sup −1}. CdTe film growth on bulk CdTe substrates resulted in a homoepitaxial interface layer with a high non-radiative recombination rate.

Measurements of Ultra-Fast single photon counting chip with energy window and 75 μm pixel pitch with Si and CdTe detectors

International Nuclear Information System (INIS)

Maj, P.; Grybos, P.; Kasinski, K.; Koziol, A.; Krzyzanowska, A.; Kmon, P.; Szczygiel, R.; Zoladz, M.

2017-01-01

Single photon counting pixel detectors become increasingly popular in various 2-D X-ray imaging techniques and scientific experiments mainly in solid state physics, material science and medicine. This paper presents architecture and measurement results of the UFXC32k chip designed in a CMOS 130 nm process. The chip consists of about 50 million transistors and has an area of 9.64 mm × 20.15 mm. The core of the IC is a matrix of 128 × 256 pixels of 75 μm pitch. Each pixel contains a CSA, a shaper with tunable gain, two discriminators with correction circuits and two 14-bit ripple counters operating in a normal mode (with energy window), a long counter mode (one 28-bit counter) and a zero-dead time mode. Gain and noise performance were verified with X-ray radiation and with the chip connected to Si (320 μm thick) and CdTe (750 μ m thick) sensors.

Calibration of the hard x-ray detectors for the FOXSI solar sounding rocket

Science.gov (United States)

Athiray, P. S.; Buitrago-Casas, Juan Camilo; Bergstedt, Kendra; Vievering, Juliana; Musset, Sophie; Ishikawa, Shin-nosuke; Glesener, Lindsay; Takahashi, Tadayuki; Watanabe, Shin; Courtade, Sasha; Christe, Steven; Krucker, Säm.; Goetz, Keith; Monson, Steven

2017-08-01

The Focusing Optics X-ray Solar Imager (FOXSI) sounding rocket experiment conducts direct imaging and spectral observation of the Sun in hard X-rays, in the energy range 4 to 20 keV. These high-sensitivity observations are used to study particle acceleration and coronal heating. FOXSI is designed with seven grazing incidence optics modules that focus X-rays onto seven focal plane detectors kept at a 2m distance. FOXSI-1 was flown with seven Double-sided Si Strip Detectors (DSSD), and two of them were replaced with CdTe detectors for FOXSI-2. The upcoming FOXSI-3 flight will carry DSSD and CdTe detectors with upgraded optics for enhanced sensitivity. The detectors are calibrated using various radioactive sources. The detector's spectral response matrix was constructed with diagonal elements using a Gaussian approximation with a spread (sigma) that accounts for the energy resolution of the detector. Spectroscopic studies of past FOXSI flight data suggest that the inclusion of lower energy X-rays could better constrain the spectral modeling to yield a more precise temperature estimation of the hot plasma. This motivates us to carry out an improved calibration to better understand the finer-order effects on the spectral response, especially at lower energies. Here we report our improved calibration of FOXSI detectors using experiments and Monte-Carlo simulations.

Se-Se isoelectronic centers in high purity CdTe

Energy Technology Data Exchange (ETDEWEB)

Najjar, Rita; Andre, Regis; Mariette, Henri [CEA-CNRS, Nanophysique et Semiconducteurs, Institut Neel, 25 rue des martyrs, 38042 Grenoble (France); Golnik, Andrzej; Kossacki, Piotr; Gaj, Jan A. [Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw (Poland)

2010-06-15

We evidence zero-dimensional exciton states trapped on isoelectronic Se centers in CdTe quantum wells, {delta}-doped with Se. Thanks to special precautions taken to have very high purity CdTe heterostructures, it is possible to observe, in photoluminescence spectra, sharp discrete lines arising from individual centers related to the Se doping. These emission lines appear at about 40 meV below the CdTe band gap energy. The most prominent lines are attributed to the recombination of excitons bound to nearest-neighbor selenium pairs in a tetrahedral CdTe environment. This assignment is confirmed by a common linear polarization direction of the emitted light, parallel to <110>. These excitons localized on individual isoelectronic traps are good candidates as single photon emitters (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Influence of EDTA2− on the hydrothermal synthesis of CdTe nanocrystallites

International Nuclear Information System (INIS)

Gong Haibo; Hao Xiaopeng; Wu Yongzhong; Cao Bingqiang; Xu Hongyan; Xu Xiangang

2011-01-01

Transformation from Te nanorods to CdTe nanoparticles was achieved with the assistance of EDTA as a ligand under hydrothermal conditions. Experimental results showed that at the beginning of reaction Te nucleated and grew into nanorods. With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. Finally, nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were obtained. The effects of EDTA on the morphology and formation of CdTe nanoparticles were discussed in consideration of the strong ligand-effect of EDTA, which greatly decreased the concentration of Cd 2+ . Furthermore, the possible formation process of CdTe nanoparticles from Te nanorods was further proposed. The crystal structure and morphology of the products were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). - Graphical Abstract: Firstly, Te nucleated and grew into nanorods in the presence of EDTA 2− . Then CdTe nucleus began to emerge on Te nanorods and finally monodispersed CdTe nanoparticles were obtained. Highlights: ► EDTA serves as a strong ligand with Cd 2+ . ► The existence of EDTA constrains the nucleation of CdTe and promotes the formation of Te nanorods. ► With the proceeding of reaction, CdTe nucleus began to emerge on the surface, especially on the tips of Te nanorods. ► Nearly monodispersed hexagonal CdTe nanoparticles with diameters of about 200 nm were finally obtained.

Measurements of Charge Sharing Effects in Pixilated CZT/CdTe Detectors

DEFF Research Database (Denmark)

Kuvvetli, Irfan; Budtz-Jørgensen, Carl

2007-01-01

In this paper, charge sharing and charge loss effects in pixilated CZT/CdTe detectors are investigated by measurements. We measured charge sharing effects function of the inter-pixel gap (with same pixel pitch), the photon energy and the detector bias voltage for a large numbers of CZT and Cd......Te pixel detector samples. The results are used for the development of the large area X-ray and Gamma ray detector for the Atmosphere-Space Interactions Monitor (ASIM) planned for the ISS ESA Columbus module. Charge sharing measurements on detector samples with identical size and pixel geometry...

X-ray Peltier cooled detectors for X-ray fluorescence analysis

International Nuclear Information System (INIS)

Loupilov, A.; Sokolov, A.; Gostilo, V.

2001-01-01

The recent results on development of X-ray Si(Li), Si-planar and CdTe p-i-n detectors cooled by Peltier coolers for fabrication of laboratory and portable XRF analysers for different applications are discussed. Low detection limits of XRF analysers are provided by increasing of detectors sensitive surface; improvement of their spectrometrical characteristics; decreasing of front-end-electronics noise level; Peltier coolers and vacuum chambers cooling modes optimization. Solution of all mentioned tasks allowed to develop Peltier cooled detectors with the following performances: (1.) Si(Li) detectors: S=20 mm 2 , thickness=3.5 mm, 175 eV (5.9 keV), 430 eV (59.6 keV); S=100 mm 2 ; thickness=4.5 mm, 270 eV (5.9 keV), 485 eV (59.6 keV). (2.) Si-planar detector: S=10 mm 2 , thickness=0.4 mm, 230 eV (5.9 keV), 460 eV (59.6 keV). (3.) CdTe p-i-n detectors: S=16 mm 2 , thickness=0.5 mm, 350 eV (5.9 keV), 585 eV (59.6 keV). S=16 mm 2 , thickness=1.2 mm, 310 eV (5.9 keV), 600 eV (59.6 keV). Advantages and disadvantages of all types of detectors for X-ray fluorescence analysis are compared. Spectra are presented. Application of different XRF analysers based on developed detectors in medicine, environmental science, industry, cryminalistics and history of art are demonstrated

X-ray Peltier cooled detectors for X-ray fluorescence analysis

International Nuclear Information System (INIS)

Loupilov, A.; Sokolov, A.; Gostilo, V.

2000-01-01

The recent results on development of X-ray Si(Li), Si-planar and CdTe p-i- n detectors cooled by Peltier coolers for fabrication of laboratory and portable XRF analysers for different applications are discussed. Low detection limits of XRF analysers are provided by increasing of detectors sensitive surface; improvement of their spectrometrical characteristics; decreasing of front-end-electronics noise level; Peltier coolers and vacuum chambers cooling modes optimization. Solution of all mentioned tasks allowed to develop Peltier cooled detectors with the following performances: (1) Si(Li) detectors: S = 20 mm 2 , thickness = 3.5 mm, 175 eV (5.9 keV), 430 eV (59.6 keV); S = 100 mm 2 ; thickness = 4.5 mm, 270 eV (5.9 keV), 485 eV (59,6 keV). (2) Si-planar detector: S = 10 mm 2 , thickness = 0.4 mm, 230 eV (5.9 keV), 460 eV (59.6 keV). (3) CdTe p-i-n detectors: S = 16 mm 2 , thickness 0.5 mm, 350 eV (5.9 keV), 585 eV (59.6 keV). S = 16 mm 2 , thickness = 1.2 mm, 310 eV (5.9 keV), 600 eV (59.6 keV). Advantages and disadvantages of all types of detectors for X-ray fluorescence analysis are compared. Spectra are presented. Application of different XRF analysers based on developed detectors in medicine, environmental science, industry, criminalistics and history of art are demonstrated. (author)

The use of portable semiconductor detectors in nuclear medicine

International Nuclear Information System (INIS)

Kuhn, W.

1986-01-01

A new biotelemetric system, CdTe semiconductor detectors with portable hard memory, for the registration of time activity curves in particular body regions of patients is introduced. The hard- and software connection of the system to the already present EDV configuration is described. The characteristics of the detectors are studied, theoretically explained and compared to the information given by the producers. By means of the determination of the ortho-iodine hippuric acid clearance (OIH) from the registration of the time activity curves in the chest the first information about the practicability in clinical use as well as the validity of the method are deduced. The detector system proved itself to be susceptible to problems, especially from manipulation of the cable or from movement of the patient. The determination of the OIH clearance from the partial body curve was problematic, because an extrapolation to the whole body based on the specific OIH kinetic in the small, observed tissue section is difficult. The comparison with the camera picture should be carefully evaluated, because this method has in principle the same inadequacies. (orig./HP) [de

Band structure of CdTe under high pressure

International Nuclear Information System (INIS)

Jayam, Sr. Gerardin; Nirmala Louis, C.; Amalraj, A.

2005-01-01

The band structures and density of states of cadmium telluride (CdTe) under various pressures ranging from normal to 4.5 Mbar are obtained. The electronic band structure at normal pressure of CdTe (ZnS structure) is analyzed and the direct band gap value is found to be 1.654 eV. CdTe becomes metal and superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The equilibrium lattice constant, bulk modulus and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(E F )) gets enhanced after metallization, which leads to the superconductivity in CdTe. In our calculation, the metallization pressure (P M = 1.935 Mbar) and the corresponding reduced volume ((V/V 0 ) M = 0.458) are estimated. Metallization occurs via direct closing of band gap at Γ point. (author)

Synthesis and characterization of CdTe quantum dots by one-step method

Directory of Open Access Journals (Sweden)

H. Li

2013-09-01

Full Text Available L-Cysteine (Cys-capped CdTe quantum dots (QDs were prepared when sodium tellurite worked as a tellurium source and sodium borohydride acted as a reductant. The influences of various experimental variables, including pH values, Cd/Te and Cd/Cys molar ratios, on the photoluminescence (PL quantum yield (QY of the obtained CdTe QDs have been systematically investigated. Experimental results indicated that green to red emitting CdTe QDs with maximum quantum yield of 19.4% can be prepared at pH 11.5 and n(Cd2+:n(Te2−:n(Cys = 1:0.07:2.0. X-Ray powder diffraction (XRD and transmission electron microscopy (TEM were used to characterize the crystal structure and shape of CdTe QDs. The results showed that the prepared CdTe QDs were of cubic zinc blend crystal structure in a sphere-like shape.DOI: http://dx.doi.org/10.4314/bcse.v27i3.7

Radiometric and dosimetric characteristics of HgI2 detectors

International Nuclear Information System (INIS)

Zaletin, V.M.; Krivozubov, O.V.; Torlin, M.A.; Fomin, V.I.

1988-01-01

The characteristics of HgI 2 detectors in x-ray and gamma detection in applications to radiometric and dosimetric monitoring and as portable instruments for such purposes was considered. Blocks with mosaic and sandwich structures were prepared and tested against each other and, for comparative purposes, against CdTe detectors for relative sensitivities at various gamma-quanta energies. Sensitivity dependencies on gamma radiation energy were plotted for the detector materials and structures as were current dependencies on the dose rate of x rays. Results indicated that the mercury iodide detectors could be used in radiometric and dosimetric measurements at gamma quantum energies up to and in excess of 1000 KeV

Spin dynamics in bulk CdTe at room temperature

International Nuclear Information System (INIS)

Nahalkova, P.; Nemec, P.; Sprinzl, D.; Belas, E.; Horodysky, P.; Franc, J.; Hlidek, P.; Maly, P.

2006-01-01

In this paper, we report on the room temperature dynamics of spin-polarized carriers in undoped bulk CdTe. Platelets of CdTe with different concentration of preparation-induced dislocations were prepared by combining the mechanical polishing and chemical etching. Using the polarization-resolved pump-probe experiment in transmission geometry, we have observed a systematic decrease of both the signal polarization and the electron spin dephasing time (from 52 to 36 ps) with the increased concentration of defects. We have suggested that the Elliot-Yafet mechanism might be the dominant spin dephasing mechanism in platelets of CdTe at room temperature

A facile route to shape controlled CdTe nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R. [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, Empangeni, KZN (South Africa); Revaprasadu, Neerish, E-mail: nrevapra@pan.uzulu.ac.za [Department of Chemistry, University of Zululand, Private Bag X1001, KwaDlangezwa 3886, Empangeni, KZN (South Africa)

2011-04-15

Research highlights: {yields} A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. {yields} This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. {yields} The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

A facile route to shape controlled CdTe nanoparticles

International Nuclear Information System (INIS)

Mntungwa, Nhlakanipho; Rajasekhar, Pullabhotla V.S.R.; Revaprasadu, Neerish

2011-01-01

Research highlights: → A facile hybrid solution based/thermolysis route has been used for the synthesis of hexadecylamine capped CdTe nanoparticles. → This method involves the reaction by the addition of an aqueous suspension of a cadmium salt to a freshly prepared NaHTe solution. → The cadmium salt plays an important role in the growth mechanism of the particles and hence its final morphology. - Abstract: Hexadecylamine (HDA) capped CdTe nanoparticles have been synthesized using a facile hybrid solution based/thermolysis route. This method involves the reaction by the addition of an aqueous suspension or solution of a cadmium salt (chloride, acetate, nitrate or carbonate) to a freshly prepared NaHTe solution. The isolated CdTe was then dispersed in tri-octylphosphine (TOP) and injected into pre-heated HDA at temperatures of 190, 230 and 270 deg. C for 2 h. The particle growth and size distribution of the CdTe particles synthesized using cadmium chloride as the cadmium source were monitored using absorption and photoluminescence spectroscopy. The final morphology of the CdTe nanoparticles synthesized from the various cadmium sources was studied by transmission electron microscopy (TEM) and high resolution TEM. The cadmium source has an influence on the final morphology of the particles.

HgCdTe photovoltaic detectors on Si substrates

International Nuclear Information System (INIS)

Zanio, K.R.; Bean, R.C.

1988-01-01

HgCdTe photovoltaic detectors have been fabricated on Si substrates through intermediate CdTe/GaAs layers. Encapsulation of the GaAs between the CdTe and Si prevents unintentional doping of the HgCdTe by Ga and As. Uniform epitaxial GaAs is grown on three inch diameter Si substrates. Detectors on such large area Si substrates will offer hybrid focal plane arrays whose dimensions are not limited by the difference between the coefficients of thermal expansion of the Si signal processor and the substrate for the HgCdTe detector array. The growth of HgCdTe detectors on the Si signal processors for monolithic focal plane arrays is also considered. 40 references

A Monte Carlo simulation study of an improved K-edge log-subtraction X-ray imaging using a photon counting CdTe detector

Energy Technology Data Exchange (ETDEWEB)

Lee, Youngjin, E-mail: radioyoungj@gmail.com [Department of Radiological Science, Eulji University, 553, Sanseong-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do (Korea, Republic of); Lee, Amy Candy [Department of Mathematics and Statistics, McGill University (Canada); Kim, Hee-Joung [Department of Radiological Science and Radiation Convergence Engineering, Yonsei University (Korea, Republic of)

2016-09-11

Recently, significant effort has been spent on the development of photons counting detector (PCD) based on a CdTe for applications in X-ray imaging system. The motivation of developing PCDs is higher image quality. Especially, the K-edge subtraction (KES) imaging technique using a PCD is able to improve image quality and useful for increasing the contrast resolution of a target material by utilizing contrast agent. Based on above-mentioned technique, we presented an idea for an improved K-edge log-subtraction (KELS) imaging technique. The KELS imaging technique based on the PCDs can be realized by using different subtraction energy width of the energy window. In this study, the effects of the KELS imaging technique and subtraction energy width of the energy window was investigated with respect to the contrast, standard deviation, and CNR with a Monte Carlo simulation. We simulated the PCD X-ray imaging system based on a CdTe and polymethylmethacrylate (PMMA) phantom which consists of the various iodine contrast agents. To acquired KELS images, images of the phantom using above and below the iodine contrast agent K-edge absorption energy (33.2 keV) have been acquired at different energy range. According to the results, the contrast and standard deviation were decreased, when subtraction energy width of the energy window is increased. Also, the CNR using a KELS imaging technique is higher than that of the images acquired by using whole energy range. Especially, the maximum differences of CNR between whole energy range and KELS images using a 1, 2, and 3 mm diameter iodine contrast agent were acquired 11.33, 8.73, and 8.29 times, respectively. Additionally, the optimum subtraction energy width of the energy window can be acquired at 5, 4, and 3 keV for the 1, 2, and 3 mm diameter iodine contrast agent, respectively. In conclusion, we successfully established an improved KELS imaging technique and optimized subtraction energy width of the energy window, and based on

The High Energy Detector of Simbol-X

Science.gov (United States)

Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Blondel, C.; Le Mer, I.; Pinsard, F.; Cara, C.; Goetschy, A.; Martignac, J.; Tauzin, G.; Hervé, S.; Laurent, P.; Chipaux, R.; Rio, Y.; Fontignie, J.; Horeau, B.; Authier, M.; Ferrando, P.

2009-05-01

The High Energy Detector (HED) is one of the three detection units on board the Simbol-X detector spacecraft. It is placed below the Low Energy Detector so as to collect focused photons in the energy range from 8 to 80 keV. It consists of a mosaic of 64 independent cameras, divided in 8 sectors. Each elementary detection unit, called Caliste, is the hybridization of a 256-pixel Cadmium Telluride (CdTe) detector with full custom front-end electronics into a unique component. The status of the HED design will be reported. The promising results obtained from the first micro-camera prototypes called Caliste 64 and Caliste 256 will be presented to illustrate the expected performance of the instrument.

The High Energy Detector of Simbol-X

International Nuclear Information System (INIS)

Meuris, A.; Limousin, O.; Blondel, C.; Le Mer, I.; Pinsard, F.; Cara, C.; Goetschy, A.; Martignac, J.; Laurent, P.; Chipaux, R.; Rio, Y.; Fontignie, J.; Horeau, B.; Ferrando, P.; Lugiez, F.; Gevin, O.; Tauzin, G.; Herve, S.; Authier, M.

2009-01-01

The High Energy Detector (HED) is one of the three detection units on board the Simbol-X detector spacecraft. It is placed below the Low Energy Detector so as to collect focused photons in the energy range from 8 to 80 keV. It consists of a mosaic of 64 independent cameras, divided in 8 sectors. Each elementary detection unit, called Caliste, is the hybridization of a 256-pixel Cadmium Telluride (CdTe) detector with full custom front-end electronics into a unique component. The status of the HED design will be reported. The promising results obtained from the first micro-camera prototypes called Caliste 64 and Caliste 256 will be presented to illustrate the expected performance of the instrument.

A pixel design for X-ray imaging with CdTe sensors

Energy Technology Data Exchange (ETDEWEB)

Lambropoulos, C.P.; Zervakis, E.G. [Technological Educational Institute of Halkis, Psahna - Evia (Greece); Loukas, D. [Institute of Nuclear Physics, NCSR Demokritos, Agia Paraskevi - Attiki (Greece)

2008-07-01

A readout architecture appropriate for X-ray Imaging using charge integration has been designed. Each pixel consists of a capacitive transimpedance amplifier, a sample and hold circuit a comparator and an 8 bit DRAM. Pixel level A/D conversion and local storage of the digitized signal is performed. The target sensors are 100{mu}m x 100 {mu}m CdTe pixel detectors and integration time of 1ms or less can be achieved. Special measures have been taken to minimize the gain fixed pattern noise and the reset noise, while purely digital correlation double sampling can be performed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A pixel design for X-ray imaging with CdTe sensors

International Nuclear Information System (INIS)

Lambropoulos, C.P.; Zervakis, E.G.; Loukas, D.

2008-01-01

A readout architecture appropriate for X-ray Imaging using charge integration has been designed. Each pixel consists of a capacitive transimpedance amplifier, a sample and hold circuit a comparator and an 8 bit DRAM. Pixel level A/D conversion and local storage of the digitized signal is performed. The target sensors are 100μm x 100 μm CdTe pixel detectors and integration time of 1ms or less can be achieved. Special measures have been taken to minimize the gain fixed pattern noise and the reset noise, while purely digital correlation double sampling can be performed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Interaction and energy transfer studies between bovine serum albumin and CdTe quantum dots conjugates: CdTe QDs as energy acceptor probes.

Science.gov (United States)

Kotresh, M G; Inamdar, L S; Shivkumar, M A; Adarsh, K S; Jagatap, B N; Mulimani, B G; Advirao, G M; Inamdar, S R

2017-06-01

In this paper, a systematic investigation of the interaction of bovine serum albumin (BSA) with water-soluble CdTe quantum dots (QDs) of two different sizes capped with carboxylic thiols is presented based on steady-state and time-resolved fluorescence measurements. Efficient Förster resonance energy transfer (FRET) was observed to occur from BSA donor to CdTe acceptor as noted from reduction in the fluorescence of BSA and enhanced fluorescence from CdTe QDs. FRET parameters such as Förster distance, spectral overlap integral, FRET rate constant and efficiency were determined. The quenching of BSA fluorescence in aqueous solution observed in the presence of CdTe QDs infers that fluorescence resonance energy transfer is primarily responsible for the quenching phenomenon. Bimolecular quenching constant (k q ) determined at different temperatures and the time-resolved fluorescence data provide additional evidence for this. The binding stoichiometry and various thermodynamic parameters are evaluated by using the van 't Hoff equation. The analysis of the results suggests that the interaction between BSA and CdTe QDs is entropy driven and hydrophobic forces play a key role in the interaction. Binding of QDs significantly shortened the fluorescence lifetime of BSA which is one of the hallmarks of FRET. The effect of size of the QDs on the FRET parameters are discussed in the light of FRET parameters obtained. Copyright © 2016 John Wiley & Sons, Ltd.

[Oxidative damage effects induced by CdTe quantum dots in mice].

Science.gov (United States)

Xie, G Y; Chen, W; Wang, Q K; Cheng, X R; Xu, J N; Huang, P L

2017-07-20

Objective: To investigate Oxidative damage effects induced by CdTe Quantum Dots (QDs) in mice. Methods: 40 ICR mice were randomly divided into 5 groups: one control group (normal saline) ; four CdTe QDs (exposed by intravenous injection of 0.2 ml of CdTe QDs at the concentration of 0、0.5、5.0、50.0 and 500.0 nmol/ml respectively) . After 24 h, the mice were decapitated and the blood was collected for serum biochemically indexes、hematology indexes, the activities of SOD、GSH-Px and the concentration of MDA were all detected. Results: The results showed in the four CdTe QDs exposure groups, the level of CRE、PLT and the concentration of MDA were all significantly lower than those of the control group ( P control group ( P <0.01) . Conclusion: It was suggested that CdTe QDs at 0.5 nmol/ml could induce Oxidative damage effects in mice.

Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

International Nuclear Information System (INIS)

Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong

2015-01-01

Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd 2+ . Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals

Pixellated thallium bromide detectors for gamma-ray spectroscopy and imaging

Energy Technology Data Exchange (ETDEWEB)

Onodera, T. E-mail: tosiyuki@smail.tohtech.ac.jp; Hitomi, K.; Shoji, T.; Hiratate, Y

2004-06-01

Recently, pixellated semiconductor detectors exhibit high-energy resolution, which have been studied actively and fabricated from CdTe, CZT and HgI{sub 2}. Thallium bromide (TlBr) is a compound semiconductor characterized with its high atomic numbers (Tl=81, Br=35) and high density (7.56 g/cm{sup 3}). Thus, TlBr exhibits higher photon stopping power than other semiconductor materials used for radiation detector fabrication such as CdTe, CZT and HgI{sub 2}. The wide band gap of TlBr (2.68 eV) permits the detectors low-noise operation at around room temperature. Our studies made an effort to fabricate pixellated TlBr detectors had sufficient detection efficiency and good charge collection efficiency. In this study, pixellated TlBr detectors were fabricated from the crystals purified by the multipass zone-refining method and grown by the horizontal traveling molten zone (TMZ) method. The TlBr detector has a continuous cathode over one crystal surface and 3x3 pixellated anodes (0.57x0.57 mm{sup 2} each) surrounded by a guard ring on the opposite surface. The electrodes were realized by vacuum evaporation of palladium through a shadow mask. Typical thickness of the detector was 2 mm. Spectrometric performance of the TlBr detectors was tested by irradiating them with {sup 241}Am (59.5 keV), {sup 57}Co (122 keV) and {sup 137}Cs (662 keV) gamma-ray sources at temperature of -20 deg. C. Energy resolutions (FWHM) were measured to be 4.0, 6.0 and 9.7 keV for 59.5, 122 and 662 keV gamma-rays, respectively.

Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

Energy Technology Data Exchange (ETDEWEB)

Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta [Panjab University, Department of Physics, Center of Advanced Study in Physics, Chandigarh (India)

2014-10-25

This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

Synthesis and characterization of TGA-capped CdTe nanoparticles embedded in PVA matrix

International Nuclear Information System (INIS)

Tripathi, S.K.; Kaur, Ramneek; Sharma, Mamta

2015-01-01

This paper reports the synthesis and characterization of TGA-capped CdTe nanoparticles and its nanocomposite in a PVA matrix prepared by ex situ technique. The crystallite sizes of the CdTe nanoparticles and nanocomposite calculated from X-ray diffraction patterns are 6.07 and 7.75 nm with hexagonal structure, respectively. The spherical nature of the CdTe nanoparticles is confirmed from transmission electron microscopy measurements. Fourier transform infrared spectroscopy shows good interaction between the CdTe nanoparticles and PVA matrix. The absorption and emission spectra have also been studied. The stability of the TGA-capped CdTe nanoparticles increases after dispersion in a PVA matrix. In electrical measurements, the dark conductivity and the steady-state photoconductivity of CdTe nanocomposite thin films have been studied. The effect of temperature and intensity on the transient photoconductivity of CdTe nanocomposite is also studied. The values of differential life time have been calculated from the decay of photocurrent with time. The non-exponential decay of photoconductivity is observed indicating that the traps exist at all the energies in the band gap, making these materials suitable for various optoelectronic devices. (orig.)

Performance of semiconductor radiation sensors for simple and low-cost radiation detector

International Nuclear Information System (INIS)

Tanimura, Yoshihiko; Birumachi, Atsushi; Yoshida, Makoto; Watanabe, Tamaki

2008-01-01

In order to develop a simple but reliable radiation detector for the general public, photon detection performances of radiation sensors have been studied in photon calibration fields and by Monte Carlo simulations. A silicon p-i-n photodiode and a CdTe detector were selected for the low cost sensors. Their energy responses to ambient dose equivalent H * (10) were evaluated over the energy range from 60 keV to 2 MeV. The response of the CdTe decreases markedly with increasing photon energy. On the other hand, the photodiode has the advantage of almost flat response above 150 keV. The sensitivities of these sensors are 4 to 6 cpm for the natural radiation. Detection limits of the radiation level are low enough to know the extreme increase of radiation due to emergency situations of nuclear power plants, fuel treatment facilities and so on. (author)

CdTe hybrid pixel detector for imaging with thermal neutrons

Czech Academy of Sciences Publication Activity Database

Jakůbek, J.; Mettivier, G.; Montesi, M.C.; Pospíšil, S.; Russo, P.; Vacík, Jiří

2006-01-01

Roč. 563, č. 1 (2006), s. 238-241 ISSN 0168-9002 R&D Pro jects: GA MŠk 1P04LA211 Institutional research plan: CEZ:AV0Z10480505 Keywords : neutronography * pixel detector * semiconductor detector Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.185, year: 2006

Translocation and neurotoxicity of CdTe quantum dots in RMEs motor neurons in nematode Caenorhabditis elegans

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yunli; Wang, Xiong; Wu, Qiuli; Li, Yiping; Wang, Dayong, E-mail: dayongw@seu.edu.cn

2015-02-11

Graphical abstract: - Highlights: • We investigated in vivo neurotoxicity of CdTe QDs on RMEs motor neurons in C. elegans. • CdTe QDs in the range of μg/L caused neurotoxicity on RMEs motor neurons. • Bioavailability of CdTe QDs may be the primary inducer for CdTe QDs neurotoxicity. • Both oxidative stress and cell identity regulate the CdTe QDs neurotoxicity. • CdTe QDs were translocated and deposited into RMEs motor neurons. - Abstract: We employed Caenorhabditis elegans assay system to investigate in vivo neurotoxicity of CdTe quantum dots (QDs) on RMEs motor neurons, which are involved in controlling foraging behavior, and the underlying mechanism of such neurotoxicity. After prolonged exposure to 0.1–1 μg/L of CdTe QDs, abnormal foraging behavior and deficits in development of RMEs motor neurons were observed. The observed neurotoxicity from CdTe QDs on RMEs motor neurons might be not due to released Cd{sup 2+}. Overexpression of genes encoding Mn-SODs or unc-30 gene controlling cell identity of RMEs neurons prevented neurotoxic effects of CdTe QDs on RMEs motor neurons, suggesting the crucial roles of oxidative stress and cell identity in regulating CdTe QDs neurotoxicity. In nematodes, CdTe QDs could be translocated through intestinal barrier and be deposited in RMEs motor neurons. In contrast, CdTe@ZnS QDs could not be translocated into RMEs motor neurons and therefore, could only moderately accumulated in intestinal cells, suggesting that ZnS coating might reduce neurotoxicity of CdTe QDs on RMEs motor neurons. Therefore, the combinational effects of oxidative stress, cell identity, and bioavailability may contribute greatly to the mechanism of CdTe QDs neurotoxicity on RMEs motor neurons. Our results provide insights into understanding the potential risks of CdTe QDs on the development and function of nervous systems in animals.

Thick epitaxial CdTe films grown by close space sublimation on Ge substrates

Energy Technology Data Exchange (ETDEWEB)

Jiang, Q; Haliday, D P; Tanner, B K; Brinkman, A W [Department of Physics, University of Durham. Science Site, Durham, DH1 3LE (United Kingdom); Cantwell, B J; Mullins, J T; Basu, A [Durham Scientific Crystals Ltd., NetPark, Thomas Wright Way, Sedgefield, County Durham, TS21 3FD (United Kingdom)], E-mail: Q.Z.Jiang@durham.ac.uk

2009-01-07

This paper reports, for the first time, the successful growth of 200 {mu}m thick CdTe films on mis-oriented Ge(1 0 0) substrates by a cost-effective optimized close space sublimation method. It is found that, as the thickness increases to a few hundred micrometres, subgrains are formed probably as a result of the large density of dislocations and strain within the initial interfacial layers. The films are of high quality (x-ray rocking curve width {approx}100 arcsec) and high resistance ({approx}10{sup 9} {omega} cm), and are thus candidates for x-ray and {gamma}-ray detectors. (fast track communication)

Photoluminescence properties of a novel conjugate of water-soluble CdTe quantum dots to guanine

Energy Technology Data Exchange (ETDEWEB)

Feng Xuejiao [North-East Normal University, Changchun 130024 (China); Shang, Qingkun, E-mail: shangqk995@nenu.edu.c [North-East Normal University, Changchun 130024 (China); Liu Hongjian [Relia Diagnostic Systems, Burlingame, CA 94010 (United States); Wang Wenlan; Wang Zhidan; Liu Junyu [North-East Normal University, Changchun 130024 (China)

2010-04-15

A novel conjugate of water-soluble CdTe quantum dots to a small biomolecule guanine has been obtained in aqueous phase. The photoluminescence property and the stability of the conjugate increased comparing to CdTe QDs. The interaction between CdTe QDs and guanine was studied by TEM, fluorescence microscope and photoluminescence (PL), IR, UV-Vis spectra. The effects of reflux time, pH value, ionic strength, and the ratio of CdTe QDs to guanine on the photoluminescence properties of conjugate were investigated in detail. The results show that guanine has a great influence on both the photoluminescence property and stability of thioglycolic acid-stabilized CdTe QDs. The formation of coordination and hydrogen bond between guanine molecules and CdTe including thioglycolic acid on its surface may effectively enhance the PL intensity and stability of CdTe QDs. The maximum PL intensity of the conjugate was obtained on the condition with lower ionic strength, less than 30 min reflux time, neutral pH value and 6/1 as molar ratio of guanine to CdTe.

MediSPECT: Single photon emission computed tomography system for small field of view small animal imaging based on a CdTe hybrid pixel detector

International Nuclear Information System (INIS)

Accorsi, R.; Autiero, M.; Celentano, L.

2007-01-01

We describe MediSPECT, a new scanner developed at University and INFN Napoli, for SPECT studies on small animals with a small field of view (FOV) and high spatial resolution. The CdTe pixel detector (a 256x256 matrix of 55 μm square pixels) operating in single photon counting for detection of gamma-rays with low and medium energy (e.g. 125 I, 27-35 keV, 99m Tc, 140 keV), is bump bonded to the Medipix2 readout chip. The FOV of the MediSPECT scanner with a coded aperture mask collimator ranges from 6.3 mm (system spatial resolution 110 μm at 27-35 keV) to 24.3 mm. With a 0.30 mm pinhole the FOV ranges from 2.4 to 29 mm (where the system spatial resolution is 1.0 mm at 27-35 keV and 2.0 mm at 140 keV). MediSPECT will be used for in vivo imaging of small organs or tissue structures in mouse, e.g., brain, thyroid, heart or tumor

Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil.

Science.gov (United States)

Kranz, Lukas; Gretener, Christina; Perrenoud, Julian; Schmitt, Rafael; Pianezzi, Fabian; La Mattina, Fabio; Blösch, Patrick; Cheah, Erik; Chirilă, Adrian; Fella, Carolin M; Hagendorfer, Harald; Jäger, Timo; Nishiwaki, Shiro; Uhl, Alexander R; Buecheler, Stephan; Tiwari, Ayodhya N

2013-01-01

Roll-to-roll manufacturing of CdTe solar cells on flexible metal foil substrates is one of the most attractive options for low-cost photovoltaic module production. However, various efforts to grow CdTe solar cells on metal foil have resulted in low efficiencies. This is caused by the fact that the conventional device structure must be inverted, which imposes severe restrictions on device processing and consequently limits the electronic quality of the CdTe layer. Here we introduce an innovative concept for the controlled doping of the CdTe layer in the inverted device structure by means of evaporation of sub-monolayer amounts of Cu and subsequent annealing, which enables breakthrough efficiencies up to 13.6%. For the first time, CdTe solar cells on metal foil exceed the 10% efficiency threshold for industrialization. The controlled doping of CdTe with Cu leads to increased hole density, enhanced carrier lifetime and improved carrier collection in the solar cell. Our results offer new research directions for solving persistent challenges of CdTe photovoltaics.

CdTe and related compounds: physics, defects, hetero- and nano-structures, crystal growth, surfaces and applications

CERN Document Server

Triboulet, Robert

Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful.

Development of Small-Pixel CZT Detectors for Future High-Resolution Hard X-ray Missions

Science.gov (United States)

Beilicke, Matthias

Owing to recent breakthroughs in grazing incidence mirror technology, next-generation hard X-ray telescopes will achieve angular resolutions of between 5 and 10 arc seconds - about an order of magnitude better than that of the NuSTAR hard X-ray telescope. As a consequence, the next generation of hard X-ray telescopes will require pixelated hard X- ray detectors with pixels on a grid with a lattice constant of between 120 and 240 um. Additional detector requirements include a low energy threshold of less than 5 keV and an energy resolution of less than 1 keV. The science drivers for a high angular-resolution hard X-ray mission include studies and measurements of black hole spins, the cosmic evolution of super-massive black holes, AGN feedback, and the behavior of matter at very high densities. We propose a R&D research program to develop, optimize and study the performance of 100-200 um pixel pitch CdTe and Cadmium Zinc Telluride (CZT) detectors of 1-2 mm thickness. Our program aims at a comparison of the performance achieved with CdTe and CZT detectors, and the optimization of the pixel, steering grid, and guard ring anode patterns. Although these studies will use existing ASICs (Application Specific Integrated Circuits), our program also includes modest funds for the development of an ultra-low noise ASIC with a 2-D grid of readout pads that can be directly bonded to the 100-200 um pixel pitch CdTe and CZT detectors. The team includes the Washington University group (Prof. M. Beilicke and Co-I Prof. H.S.W. Krawczynski et al.), and co-investigator G. De Geronimo at Brookhaven National Laboratory (BNL). The Washington University group has a 10 year track record of innovative CZT detector R&D sponsored by the NASA Astronomy and Physics Research and Analysis (APRA) program. The accomplishments to date include the development of CZT detectors with pixel pitches between 350 um and 2.5 mm for the ProtoExist, EXIST, and X-Calibur hard X-ray missions with some of the best

RHEED studies of MBE growth mechanisms of CdTe and CdMnTe

Energy Technology Data Exchange (ETDEWEB)

Waag, A.; Behr, T.; Litz, T.; Kuhn-Heinrich, B.; Hommel, D.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

1993-01-30

We report on reflection high energy electron diffraction (RHEED) studies of molecular beam epitaxy (MBE) growth of CdTe and CdMnTe on (100) oriented CdTe substrates. RHEED oscillations were measured for both the growth and desorption of CdTe and CdMnTe as a function of flux and temperature. For the first time, the influence of laser and electron irradiation on the growth rate, as well as desorption, of CdTe is studied in detail using RHEED oscillations. We found a very small effect on the growth rate as well as on the CdTe desorption rate. The growth rate of CdTe was determined for different temperatures and CdTe flux ratios. The obtained experimental results are compared with a kinetic growth model to get information on the underlying growth processes, taking into account the influence of a precursor by including surface diffusion. From the comparison between model and experimental results the sticking coefficients of Cd and Te are determined. The growth rate of CdMnTe increases with Mn flux. This dependence can be used to calibrate the Mn content during growth by comparing the growth rate of CdTe with the growth rate of CdMnTe. The change in growth rate has been correlated with Mn content via photoluminescence measurements. In addition, the sticking coefficient of Mn is derived by comparing experimental results with a kinetic growth model. For high manganese content a transition to three-dimensional growth occurs. (orig.).

CdTe polycrystalline films on Ni foil substrates by screen printing and their photoelectric performance

International Nuclear Information System (INIS)

Yao, Huizhen; Ma, Jinwen; Mu, Yannan; Su, Shi; Lv, Pin; Zhang, Xiaoling; Zhou, Liying; Li, Xue; Liu, Li; Fu, Wuyou; Yang, Haibin

2015-01-01

Highlights: • The sintered CdTe polycrystalline films by a simple screen printing. • The flexible Ni foil was chose as substrates to reduce the weight of the electrode. • The compact CdTe film was obtained at 550 °C sintering temperature. • The photoelectric activity of the CdTe polycrystalline films was excellent. - Abstract: CdTe polycrystalline films were prepared on flexible Ni foil substrates by sequential screen printing and sintering in a nitrogen atmosphere for the first time. The effect of temperature on the quality of the screen-printed film was investigated in our work. The high-quality CdTe films were obtained after sintering at 550 °C for 2 h. The properties of the sintered CdTe films were characterized by scanning electron microscopy, X-ray diffraction pattern and UV–visible spectroscopy. The high-quality CdTe films have the photocurrent was 2.04 mA/cm 2 , which is higher than that of samples prepared at other temperatures. Furthermore, CdCl 2 treatment reduced the band gap of the CdTe film due to the larger grain size. The photocurrent of photoelectrode based on high crystalline CdTe polycrystalline films after CdCl 2 treatment improved to 2.97 mA/cm 2 , indicating a potential application in photovoltaic devices

Glutathione-capped CdTe nanocrystals as probe for the determination of fenbendazole

Science.gov (United States)

Li, Qin; Tan, Xuanping; Li, Jin; Pan, Li; Liu, Xiaorong

2015-04-01

Water-soluble glutathione (GSH)-capped CdTe quantum dots (QDs) were synthesized. In pH 7.1 PBS buffer solution, the interaction between GSH-capped CdTe QDs and fenbendazole (FBZ) was investigated by spectroscopic methods, including fluorescence spectroscopy, ultraviolet-visible absorption spectroscopy, and resonance Rayleigh scattering (RRS) spectroscopy. In GSH-capped CdTe QDs solution, the addition of FBZ results in the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs. And the quenching intensity (enhanced RRS intensity) was proportional to the concentration of FBZ in a certain range. Investigation of the interaction mechanism, proved that the fluorescence quenching and RRS enhancement of GSH-capped CdTe QDs by FBZ is the result of electrostatic attraction. Based on the quenching of fluorescence (enhancement of RRS) of GSH-capped CdTe QDs by FBZ, a novel, simple, rapid and specific method for FBZ determination was proposed. The detection limit for FBZ was 42 ng mL-1 (3.4 ng mL-1) and the quantitative determination range was 0-2.8 μg mL-1 with a correlation of 0.9985 (0.9979). The method has been applied to detect FBZ in real simples and with satisfactory results.

Physical and optical properties of size-selective CdTe nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Fok, Alice [Department of Chemistry, The City College of New York, CUNY New York, NY 10031 (United States); Morales, Jorge [Department of Biology, City College of New York, CUNY New York, NY 10031 (United States); Sohel, Mohammad [Natural Sciences Department, Hostos College, CUNY Bronx, NY 10451 (United States)

2010-06-15

Physical and optical properties of colloidal cadmium telluride nanocrystals (CdTe NCs) were investigated. The CdTe NCs were synthesized by reacting elemental tellurium dissolved in tributylphosphine with a mixture of cadmium oxide, octadecene, and oleic acid. These NCs, which were characterized by transmission electron microscopy (TEM) are spherical and ranged from 5 to 7 nm in diameter. The identity of the compound post-synthesis was confirmed by X-Ray diffraction (XRD) patterns. UV-Vis and photoluminescence (PL) properties as grown and pure CdTe samples were investigated. Bright excitonic photoluminescence emission was observed (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A basic component for ISGRI, the CdTe gamma camera on board the INTEGRAL satellite

International Nuclear Information System (INIS)

Arques, M.; Baffert, N.; Lattard, D.

1999-01-01

A basic component, called Polycell, has been developed for the ISGRI (INTEGRAL Soft Gamma Ray Imager) CdTe camera on board the INTEGRAL (INTErnational Gamma-Ray Astrophysics Laboratory) satellite. Operating at room temperature, it covers the 20 keV--1 MeV energy range. It features a sub-ensemble of 16 CdTe detectors and their associated front end electronics. This electronics is based on 4-channel analog-digital ASICs. Their analog part features a low noise preamplifier, allowing a threshold below 20 keV and a pulse rise-time measurement which permits a charge loss correction. The digital part ensures the internal acquisition timing sequence as well as the dialogue with external electronics. Two versions of the ISGRI ASIC have been developed in a collaboration of two CEA microelectronics teams from CEA/DTA/LETI/DSYS and CEA/DSM/DAPNIA/SEI, respectively on a standard CMOS AMS process hardened against radiation by lay-out, and on a Silicon On Insulator process (DMILL MHS), the latter being latch-up free. This paper presents the ASIC and polycell architecture as well as experimental results obtained with polycells equipped with AMS ASICs

CdTe Based Hard X-ray Imager Technology For Space Borne Missions

Science.gov (United States)

Limousin, Olivier; Delagnes, E.; Laurent, P.; Lugiez, F.; Gevin, O.; Meuris, A.

2009-01-01

CEA Saclay has recently developed an innovative technology for CdTe based Pixelated Hard X-Ray Imagers with high spectral performance and high timing resolution for efficient background rejection when the camera is coupled to an active veto shield. This development has been done in a R&D program supported by CNES (French National Space Agency) and has been optimized towards the Simbol-X mission requirements. In the latter telescope, the hard X-Ray imager is 64 cm² and is equipped with 625µm pitch pixels (16384 independent channels) operating at -40°C in the range of 4 to 80 keV. The camera we demonstrate in this paper consists of a mosaic of 64 independent cameras, divided in 8 independent sectors. Each elementary detection unit, called Caliste, is the hybridization of a 256-pixel Cadmium Telluride (CdTe) detector with full custom front-end electronics into a unique 1 cm² component, juxtaposable on its four sides. Recently, promising results have been obtained from the first micro-camera prototypes called Caliste 64 and will be presented to illustrate the capabilities of the device as well as the expected performance of an instrument based on it. The modular design of Caliste enables to consider extended developments toward IXO type mission, according to its specific scientific requirements.

Detector Motion Method to Increase Spatial Resolution in Photon-Counting Detectors

Energy Technology Data Exchange (ETDEWEB)

Lee, Daehee; Park, Kyeongjin; Lim, Kyung Taek; Cho, Gyuseong [Korea Advanced Institute of Science and Technology, Daejon (Korea, Republic of)

2017-03-15

Medical imaging requires high spatial resolution of an image to identify fine lesions. Photoncounting detectors in medical imaging have recently been rapidly replacing energy-integrating detectors due to the former's high spatial resolution, high efficiency and low noise. Spatial resolution in a photon counting image is determined by the pixel size. Therefore, the smaller the pixel size, the higher the spatial resolution that can be obtained in an image. However, detector redesigning is required to reduce pixel size, and an expensive fine process is required to integrate a signal processing unit with reduced pixel size. Furthermore, as the pixel size decreases, charge sharing severely deteriorates spatial resolution. To increase spatial resolution, we propose a detector motion method using a large pixel detector that is less affected by charge sharing. To verify the proposed method, we utilized a UNO-XRI photon-counting detector (1-mm CdTe, Timepix chip) at the maximum X-ray tube voltage of 80 kVp. A similar spatial resolution of a 55-μm-pixel image was achieved by application of the proposed method to a 110-μm-pixel detector with a higher signal-to-noise ratio. The proposed method could be a way to increase spatial resolution without a pixel redesign when pixels severely suffer from charge sharing as pixel size is reduced.

Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Guillen-Cervantes, A.; Silva-Lopez, H.; Becerril-Silva, M.; Arias-Ceron, J.S.; Campos-Gonzalez, E.; Zelaya-Angel, O. [CINVESTAV-IPN, Physics Department, Apdo. Postal 14-740, Mexico (Mexico); Medina-Torres, A.C. [Escuela Superior de Fisica y Matematicas del IPN, Mexico (Mexico)

2014-11-12

CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (∝2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices. (orig.)

A prototype small CdTe gamma camera for radioguided surgery and other imaging applications.

Science.gov (United States)

Tsuchimochi, Makoto; Sakahara, Harumi; Hayama, Kazuhide; Funaki, Minoru; Ohno, Ryoichi; Shirahata, Takashi; Orskaug, Terje; Maehlum, Gunnar; Yoshioka, Koki; Nygard, Einar

2003-12-01

Gamma probes have been used for sentinel lymph node biopsy in melanoma and breast cancer. However, these probes can provide only radioactivity counts and variable pitch audio output based on the intensity of the detected radioactivity. We have developed a small semiconductor gamma camera (SSGC) that allows visualisation of the size, shape and location of the target tissues. This study is designed to characterise the performance of the SSGC for radioguided surgery of metastatic lesions and for other imaging applications amenable to the smaller format of this prototype imaging system. The detector head had 32 cadmium telluride semiconductor arrays with a total of 1,024 pixels, and with application-specific integrated circuits (ASICs) and a tungsten collimator. The entire assembly was encased in a lead housing measuring 152 mmx166 mmx65 mm. The effective visual field was 44.8 mmx44.8 mm. The energy resolution and imaging aspects were tested. Two spherical 5-mm- and 15-mm-diameter technetium-99m radioactive sources that had activities of 0.15 MBq and 100 MBq, respectively, were used to simulate a sentinel lymph node and an injection site. The relative detectability of these foci by the new detector and a conventional scintillation camera was studied. The prototype was also examined in a variety of clinical applications. Energy resolution [full-width at half-maximum (FWHM)] for a single element at the centre of the field of view was 4.2% at 140 keV (99mTc), and the mean energy resolution of the CdTe detector arrays was approximately 7.8%. The spatial resolution, represented by FWHM, had a mean value of 1.56 +/- 0.05 mm. Simulated node foci could be visualised clearly by the SSGC using a 15-s acquisition time. In preliminary clinical tests, the SSGC successfully imaged diseases in a variety of tissues, including salivary and thyroid glands, temporomandibular joints and sentinel lymph nodes. The SSGC has significant potential for diagnosing diseases and facilitating

A prototype small CdTe gamma camera for radioguided surgery and other imaging applications

Energy Technology Data Exchange (ETDEWEB)

Tsuchimochi, Makoto; Hayama, Kazuhide [Department of Oral and Maxillofacial Radiology, The Nippon Dental University School of Dentistry at Niigata, 1-8 Hamaura-cho, 951-8580, Niigata (Japan); Sakahara, Harumi [Department of Radiology, Hamamatsu University School of Medicine, Hamamatsu (Japan); Funaki, Minoru; Ohno, Ryoichi; Shirahata, Takashi [Acrorad Co. Ltd., Tokyo (Japan); Orskaug, Terje; Maehlum, Gunnar; Yoshioka, Koki; Nygard, Einar [Integrated Detector and Electronics A.S (IDE AS), Hovik (Norway)

2003-12-01

Gamma probes have been used for sentinel lymph node biopsy in melanoma and breast cancer. However, these probes can provide only radioactivity counts and variable pitch audio output based on the intensity of the detected radioactivity. We have developed a small semiconductor gamma camera (SSGC) that allows visualisation of the size, shape and location of the target tissues. This study is designed to characterise the performance of the SSGC for radioguided surgery of metastatic lesions and for other imaging applications amenable to the smaller format of this prototype imaging system. The detector head had 32 cadmium telluride semiconductor arrays with a total of 1,024 pixels, and with application-specific integrated circuits (ASICs) and a tungsten collimator. The entire assembly was encased in a lead housing measuring 152 mm x 166 mm x 65 mm. The effective visual field was 44.8 mm x 44.8 mm. The energy resolution and imaging aspects were tested. Two spherical 5-mm- and 15-mm-diameter technetium-99m radioactive sources that had activities of 0.15 MBq and 100 MBq, respectively, were used to simulate a sentinel lymph node and an injection site. The relative detectability of these foci by the new detector and a conventional scintillation camera was studied. The prototype was also examined in a variety of clinical applications. Energy resolution [full-width at half-maximum (FWHM)] for a single element at the centre of the field of view was 4.2% at 140 keV ({sup 99m}Tc), and the mean energy resolution of the CdTe detector arrays was approximately 7.8%. The spatial resolution, represented by FWHM, had a mean value of 1.56{+-}0.05 mm. Simulated node foci could be visualised clearly by the SSGC using a 15-s acquisition time. In preliminary clinical tests, the SSGC successfully imaged diseases in a variety of tissues, including salivary and thyroid glands, temporomandibular joints and sentinel lymph nodes. The SSGC has significant potential for diagnosing diseases and

A prototype small CdTe gamma camera for radioguided surgery and other imaging applications

International Nuclear Information System (INIS)

Tsuchimochi, Makoto; Hayama, Kazuhide; Sakahara, Harumi; Funaki, Minoru; Ohno, Ryoichi; Shirahata, Takashi; Orskaug, Terje; Maehlum, Gunnar; Yoshioka, Koki; Nygard, Einar

2003-01-01

Gamma probes have been used for sentinel lymph node biopsy in melanoma and breast cancer. However, these probes can provide only radioactivity counts and variable pitch audio output based on the intensity of the detected radioactivity. We have developed a small semiconductor gamma camera (SSGC) that allows visualisation of the size, shape and location of the target tissues. This study is designed to characterise the performance of the SSGC for radioguided surgery of metastatic lesions and for other imaging applications amenable to the smaller format of this prototype imaging system. The detector head had 32 cadmium telluride semiconductor arrays with a total of 1,024 pixels, and with application-specific integrated circuits (ASICs) and a tungsten collimator. The entire assembly was encased in a lead housing measuring 152 mm x 166 mm x 65 mm. The effective visual field was 44.8 mm x 44.8 mm. The energy resolution and imaging aspects were tested. Two spherical 5-mm- and 15-mm-diameter technetium-99m radioactive sources that had activities of 0.15 MBq and 100 MBq, respectively, were used to simulate a sentinel lymph node and an injection site. The relative detectability of these foci by the new detector and a conventional scintillation camera was studied. The prototype was also examined in a variety of clinical applications. Energy resolution [full-width at half-maximum (FWHM)] for a single element at the centre of the field of view was 4.2% at 140 keV ( 99m Tc), and the mean energy resolution of the CdTe detector arrays was approximately 7.8%. The spatial resolution, represented by FWHM, had a mean value of 1.56±0.05 mm. Simulated node foci could be visualised clearly by the SSGC using a 15-s acquisition time. In preliminary clinical tests, the SSGC successfully imaged diseases in a variety of tissues, including salivary and thyroid glands, temporomandibular joints and sentinel lymph nodes. The SSGC has significant potential for diagnosing diseases and facilitating

TFTR alpha extraction and measurement: Development and testing of advanced alpha detectors: Final report

International Nuclear Information System (INIS)

Wehring, B.W.

1988-01-01

Advanced alpha-particle detectors made of heavy elements were investigated as alternatives to silicon surface-barrier detectors for the ''foil-neutralization technique'' of alpha-particle diagnostics in fusion reactors with high neutron backgrounds. From an extensive literature review, it was decided that HgI 2 would make a more suitable detector for alpha-particle diagnostics than other heavy element detectors such as CdTe. Thus, HgI 2 detectors were designed and fabricated. Experimental tests were performed to determine detector characteristics and detector responses to alpha particles. Radiation noise measurements were also performed using the North Carolina State University PULSTAR nuclear reactor for both the HgI 2 detectors and commercial Si(Au) surface barrier detectors. 15 refs., 1 fig

Whole body detectors for clinical applications

International Nuclear Information System (INIS)

Silar, J.

The requirements are presented on the parameters of whole-body detectors suitable for clinical retention assays and the detector-patient configuration described. A whole-body detector was developed with an axial configuration of two pairs of large-volume scintillation detectors with NaI(Tl) crystals. One pair is placed under the bed, the other above the bed on which the patient is being examined. The axes of the crystals are located at a distance of 90 cm apart. The field of vision of the detector is described for the application of a 137 Cs source in the air and in a 24 cm layer of water. The positive characteristics of the detector are listed as being homogeneous sensitivity, energy resolution, long-term stability of signal pulse amplitude and average pulse rate in the integral mode. The results obtained show that the detector may be used to evaluate the level of contamination of persons by gamma emitters within the region of approximately 800 Bq to 74 MBq. The error in converting the number of signal pulses in the integral mode does not exceed 50% for gamma emitters with a photon energy above 30O keV. (J.B.)

Characterization of electroless Au, Pt and Pd contacts on CdTe and ZnTe by RBS and SIMS techniques

Energy Technology Data Exchange (ETDEWEB)

Roumie, M. E-mail: mroumie@cnrs.edu.lb; Hageali, M.; Zahraman, K.; Nsouli, B.; Younes, G

2004-06-01

Rutherford backscattering spectrometry (RBS) was applied to characterize Au, Pt and Pd contacts on II-VI semiconductor materials, CdTe and ZnTe, used as nuclear detectors. Electroless thin film depositions were prepared by changing the concentration of the reaction solution. Contrary to the deposition reaction time, it was observed that the amount of solution dilution degree had a considerable effect on increasing the thickness of the metal layer. Furthermore, PICTS electrical measurements confirmed the depth profile analysis performed by RBS and SIMS.

Precision timing detectors with cadmium-telluride sensor

Science.gov (United States)

Bornheim, A.; Pena, C.; Spiropulu, M.; Xie, S.; Zhang, Z.

2017-09-01

Precision timing detectors for high energy physics experiments with temporal resolutions of a few 10 ps are of pivotal importance to master the challenges posed by the highest energy particle accelerators such as the LHC. Calorimetric timing measurements have been a focus of recent research, enabled by exploiting the temporal coherence of electromagnetic showers. Scintillating crystals with high light yield as well as silicon sensors are viable sensitive materials for sampling calorimeters. Silicon sensors have very high efficiency for charged particles. However, their sensitivity to photons, which comprise a large fraction of the electromagnetic shower, is limited. To enhance the efficiency of detecting photons, materials with higher atomic numbers than silicon are preferable. In this paper we present test beam measurements with a Cadmium-Telluride (CdTe) sensor as the active element of a secondary emission calorimeter with focus on the timing performance of the detector. A Schottky type CdTe sensor with an active area of 1cm2 and a thickness of 1 mm is used in an arrangement with tungsten and lead absorbers. Measurements are performed with electron beams in the energy range from 2 GeV to 200 GeV. A timing resolution of 20 ps is achieved under the best conditions.

Fast photoconductor CdTe detectors for synchrotron x-ray studies

International Nuclear Information System (INIS)

Yoo, Sung Shik; Faurie, J.P.; Huang Qiang; Rodricks, B.

1993-09-01

The Advanced Photon Source will be that brightest source of synchrotron x-rays when it becomes operational in 1996. During normal operation, the ring will be filled with 20 bunches of positrons with an interbunch spacing of 177 ns and a bunch width of 119 ps. To perform experiments with x-rays generated by positrons on these time scales one needs extremely high speed detectors. To achieve the necessary high speed, we are developing MBE-grown CdTe-base photoconductive position sensitive array detectors. The arrays fabricated have 64 pixels with a gap of 100 μm between pixels. The high speed response of the devices was tested using a short pulse laser. X-ray static measurements were performed using an x-ray tube and synchrotron radiation to study the device's response to flux and wavelength changes. This paper presents the response of the devices to some of these tests and discusses different physics aspects to be considered when designing high speed detectors

Comparison of three types of XPAD3.2/CdTe single chip hybrids for hard X-ray applications in material science and biomedical imaging

Energy Technology Data Exchange (ETDEWEB)

Buton, C., E-mail: clement.buton@synchrotron-soleil.fr [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Dawiec, A. [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Graber-Bolis, J.; Arnaud, K. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Bérar, J.F.; Blanc, N.; Boudet, N. [Université Grenoble Alpes, Institut NÉEL, F-38042 Grenoble (France); CNRS, Institut NÉEL, F-38042 Grenoble (France); Clémens, J.C.; Debarbieux, F. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Delpierre, P.; Dinkespiler, B. [imXPAD SAS — Espace Mistral, Athélia IV, 297 avenue du Mistral, 13600 La Ciotat (France); Gastaldi, T. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Hustache, S. [Synchrotron SOLEIL, L´Orme des Merisiers, Saint-Aubin — BP 48 91192, Gif-sur-Yvette Cedex (France); Morel, C.; Pangaud, P. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France); Perez-Ponce, H. [imXPAD SAS — Espace Mistral, Athélia IV, 297 avenue du Mistral, 13600 La Ciotat (France); Vigeolas, E. [CPPM, Aix-Marseille Université, CNRS/IN2P3, Marseille (France)

2014-09-11

The CHIPSPECT consortium aims at building a large multi-modules CdTe based photon counting detector for hard X-ray applications. For this purpose, we tested nine XPAD3.2 single chip hybrids in various configurations (i.e. Ohmic vs. Schottky contacts or electrons vs. holes collection mode) in order to select the most performing and best suited configuration for our experimental requirements. Measurements have been done using both X-ray synchrotron beams and {sup 241}Am source. Preliminary results on the image quality, calibration, stability, homogeneity and linearity of the different types of detectors are presented.

Preparation of bioconjugates of CdTe nanocrystals for cancer marker detection

International Nuclear Information System (INIS)

Hu Fengqin; Ran Yuliang; Zhou Zhuan; Gao Mingyuan

2006-01-01

Highly fluorescent CdTe quantum dots (Q-dots) stabilized by 3-mercaptopropionic acid (MPA) were prepared by an aqueous solution approach and used as fluorescent labels in detecting a cancer marker, carcinoembryonic antigen (CEA), expressed on human colon carcinoma cell line LS 180. Nonspecific adsorptions of CdTe Q-dots on carcinoma cells were observed and effectively eliminated by replacing MPA with a thiolated PEG (poly(ethylene glycol), Mn = 750) synthesized according to literature. It was unexpectedly found out that the PEG-coated CdTe Q-dots exhibited very strong and specific affinity to anti-CEA monoclonal antibody rch 24 (rch 24 mAb). The resultant CdTe-(rch 24 mAb) conjugates were successfully used in detections of CEA expressed on the surface of cell line LS 180. Further experiments demonstrated that the fluorescent CdTe Q-dots exhibited much better photostability and a brighter fluorescence than FITC, which consequently led to a higher efficiency in the cancer marker detection

Fabrication of radiation detector using PbI2 crystals

International Nuclear Information System (INIS)

Shoji, T.; Ohba, K.; Suehiro, T.; Hiratate, Y.

1995-01-01

Radiation detectors have been fabricated from lead iodide (PbI 2 ) crystals grown by two methods: zone melting and Bridgman methods. In response characteristics of the detector fabricated from crystals grown by the zone melting method, a photopeak for γ-rays from an 241 Am source (59.5 KeV) has been clearly observed with applied detector bias of 500 V at room temperature. The hole drift mobility is estimated to be about 5.5 cm 2 /Vs from measurement of pulse rise time for 5.48 MeV α-rays from 241 Am. By comparing the detector bias versus saturated peak position of the PbI 2 detector with that of CdTe detector, the average energy for producing electron-hole pairs is estimated to be about 8.4 eV for the PbI 2 crystal. A radiation detector fabricated from PbI 2 crystals grown by the Bridgman method, however, exhibited no response for γ-rays

Application of energy dispersive X-ray spectrometers with semiconductor detectors in radiometric analyses

International Nuclear Information System (INIS)

Jugelt, P.; Schieckel, M.

1983-01-01

Problems and possibilities of applying semiconductor detector spectrometers in radiometric analyses are described. A summary of the state of the art and tendencies of device engineering and spectra evaluation is given. Liquid-nitrogen cooled Li-drifted Si-detectors and high-purity Ge-detectors are compared. Semiconductor detectors working at room temperature are under development. In this connection CdTe and HgI 2 semiconductor detectors are compared. The use of small efficient computers in the spectrometer systems stimulates the development of algorithms for spectra analyses and for determining the concentration. Fields of application of energy dispersive X-ray spectrometers are X-ray diffraction and X-ray macroanalysis in investigating the structure of extensive surface regions

One-step synthesis of CdTe branched nanowires and nanorod arrays

International Nuclear Information System (INIS)

Hou Junwei; Yang Xiuchun; Lv Xiaoyi; Peng Dengfeng; Huang Min; Wang Qingyao

2011-01-01

Single crystalline CdTe branched nanowires and well-aligned nanorod arrays were simultaneously synthesized by a simple chemical vapor deposition (CVD) technique. X-ray diffraction (XRD), scanning electronic microscopy (SEM), transmission electronic microscopy (TEM) and selected area electronic diffraction (SAED) were used to study the crystalline structure, composition and morphology of different samples. Vapor-liquid-solid (VLS) and vapor-solid (VS) processes were proposed for the formation of the CdTe branched nanowires and nanorod arrays, respectively. As-grown CdTe nanorod arrays show a strong red emission band centered at about 620 nm, which can be well fitted by two Gaussian curves centered at 610 nm and 635 nm, respectively.

Studying nanotoxic effects of CdTe quantum dots in Trypanosoma cruzi

Directory of Open Access Journals (Sweden)

Cecilia Stahl Vieira

2011-03-01

Full Text Available Semiconductor nanoparticles, such as quantum dots (QDs, were used to carry out experiments in vivo and ex vivo with Trypanosoma cruzi. However, questions have been raised regarding the nanotoxicity of QDs in living cells, microorganisms, tissues and whole animals. The objective of this paper was to conduct a QD nanotoxicity study on living T. cruzi protozoa using analytical methods. This was accomplished using in vitro experiments to test the interference of the QDs on parasite development, morphology and viability. Our results show that after 72 h, a 200 μM cadmium telluride (CdTe QD solution induced important morphological alterations in T. cruzi, such as DNA damage, plasma membrane blebbing and mitochondrial swelling. Flow cytometry assays showed no damage to the plasma membrane when incubated with 200 μM CdTe QDs for up to 72 h (propidium iodide cells, giving no evidence of classical necrosis. Parasites incubated with 2 μM CdTe QDs still proliferated after seven days. In summary, a low concentration of CdTe QDs (2 μM is optimal for bioimaging, whereas a high concentration (200 μM CdTe could be toxic to cells. Taken together, our data indicate that 2 μM QD can be used for the successful long-term study of the parasite-vector interaction in real time.

Effect of shells on photoluminescence of aqueous CdTe quantum dots

International Nuclear Information System (INIS)

Yuan, Zhimin; Yang, Ping

2013-01-01

Graphical abstract: Size-tunable CdTe coated with several shells using an aqueous solution synthesis. CdTe/CdS/ZnS quantum dots exhibited high PL efficiency up to 80% which implies the promising applications for biomedical labeling. - Highlights: • CdTe quantum dots were fabricated using an aqueous synthesis. • CdS, ZnS, and CdS/ZnS shells were subsequently deposited on CdTe cores. • Outer ZnS shells provide an efficient confinement of electron and hole inside the QDs. • Inside CdS shells can reduce the strain on the QDs. • Aqueous CdTe/CdS/ZnS QDs exhibited high stability and photoluminescence efficiency of 80%. - Abstract: CdTe cores with various sizes were fabricated in aqueous solutions. Inorganic shells including CdS, ZnS, and CdS/ZnS were subsequently deposited on the cores through a similar aqueous procedure to investigate the effect of shells on the photoluminescence properties of the cores. In the case of CdTe/CdS/ZnS quantum dots, the outer ZnS shell provides an efficient confinement of electron and hole wavefunctions inside the quantum dots, while the middle CdS shell sandwiched between the CdTe core and ZnS shell can be introduced to obviously reduce the strain on the quantum dots because the lattice parameters of CdS is situated at the intermediate-level between those of CdTe and ZnS. In comparison with CdTe/ZnS core–shell quantum dots, the as-prepared water-soluble CdTe/CdS/ZnS quantum dots in our case can exhibit high photochemical stability and photoluminescence efficiency up to 80% in an aqueous solution, which implies the promising applications in the field of biomedical labeling

Physical vapor deposition of CdTe thin films at low temperature for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Heisler, Christoph; Brueckner, Michael; Lind, Felix; Kraft, Christian; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2012-07-01

Cadmium telluride is successfully utilized as an absorber material for thin film solar cells. Industrial production makes use of high substrate temperatures for the deposition of CdTe absorber layers. However, in order to exploit flexible substrates and to simplify the manufacturing process, lower deposition temperatures are beneficial. Based on the phase diagram of CdTe, predictions on the stoichiometry of CdTe thin films grown at low substrate temperatures are made in this work. These predictions were verified experimentally using additional sources of Cd and Te during the deposition of the CdTe thin films at different substrate temperatures. The deposited layers were analyzed with energy-dispersive X-ray spectroscopy. In case of CdTe layers which were deposited at substrate temperatures lower than 200 C without usage of additional sources we found a non-stoichiometric growth of the CdTe layers. The application of the additional sources leads to a stoichiometric growth for substrate temperatures down to 100 C which is a significant reduction of the substrate temperature during deposition.

Influence of the layer parameters on the performance of the CdTe solar cells

Science.gov (United States)

Haddout, Assiya; Raidou, Abderrahim; Fahoume, Mounir

2018-03-01

Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1D. The ZnO: Al film shows a high efficiency than SnO2:F. Moreover, the thinner window layer and lower defect density of CdS films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer CdTe and high metal work function. For the low cost of cell production, ultrathin film CdTe cells are used with a back surface field (BSF) between CdTe and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick CdTe, 0.1-μm-thick PbTe and 30-nm-thick CdS.

The next generation CdTe technology- Substrate foil based solar cells

Energy Technology Data Exchange (ETDEWEB)

Ferekides, Chris [Univ. of South Florida, Tampa, FL (United States)

2017-03-22

The main objective of this project was the development of one of the most promising Photovoltaic (PV) materials CdTe into a versatile, cost effective, and high throughput technology, by demonstrating substrate devices on foil substrates using high throughput fabrication conditions. The typical CdTe cell is of the superstrate configuration where the solar cell is fabricated on a glass superstrate by the sequential deposition of a TCO, n-type heterojunction partner, p-CdTe absorber, and back contact. Large glass modules are heavy and present significant challenges during manufacturing (uniform heating, etc.). If a substrate CdTe cell could be developed (the main goal of this project) a roll-to-toll high throughput technology could be developed.

Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe

CERN Document Server

Wolf, H; Ostheimer, V; Hamann, J; Lany, S; Wichert, T

2000-01-01

Using the radioactive acceptor $^{111}\\!$Ag for perturbed $\\gamma$-$\\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acceptors in CdTe via pair formation, which was also observed in In-doped ZnTe. In undoped or Sb-doped CdTe and in undoped ZnSe, the PAC experiments indicate the compensation of Ag acceptors by the formation of double broken bond centres, which are characterised by an electric field gradient with an asymmetry parameter close to h = 1. Additionally, a very large electric field gradient was observed in CdTe, which is possibly connected with residual impurities.

Emissions and encapsulation of cadmium in CdTe PV modules during fires

Energy Technology Data Exchange (ETDEWEB)

Fthenakis, V.M.; Fuhrmann, M.; Heiser, J.; Fitts, J.; Wang, W. [Brookhaven National Laboratory, Upton, NY (United States). Environmental Sciences Dept.; Lanzirotti, A. [University of Chicago, Chicago, IL (United States). Consortium for Advanced Radiation Resources

2005-12-15

Fires in residential and commercial properties are not uncommon. If such fires involve the roof, photovoltaic arrays mounted on the roof will be exposed to the flames. The amount of cadmium that can be released in fires involving CdTe PV and the magnitude of associated health risks has been debated. The current study aims in delineating this issue. Previous thermogravimetric studies of CdTe, involved pure CdTe and single-glass PV modules. The current study is based on glass-glass CdTe PV modules which are the only ones in the market. Pieces of commercial CdTe photovoltaic (PV) modules, sizes 25x3 cm, were heated to temperatures up to 1100{sup o}C to simulate exposure to residential and commercial building fires. The temperature rate and duration in these experiments were defined according to standard protocols. Four different types of analysis were performed to investigate emissions and redistribution of elements in the matrix of heated CdTe PV modules: (1) measurements of sample weight loss as a function of temperature; (2) analyses of Cd and Te in the gaseous emissions; (3) Cd distribution in the heated glass using synchrotron X-ray fluorescence microprobe analysis; and (4) chemical analysis for Cd and Te in the acid-digested glass. These experiments showed that almost all (i.e., 99.5%) of the cadmium content of CdTe PV modules was encapsulated in the molten glass matrix; a small amount of Cd escaped from the perimeter of the samples before the two sheets of glass melted together. Adjusting for this loss in full-size modules, results in 99.96% retention of Cd. Multiplying this with the probability of occurrence for residential fires in wood-frame houses in the US (e.g., 10{sup -4}), results in emissions of 0.06 mg/GWh; the probability of sustained fires and subsequent emissions in adequately designed and maintained utility systems appears to be zero. (Author)

Leakage current measurements on pixelated CdZnTe detectors

NARCIS (Netherlands)

Dirks, B.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

2006-01-01

In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

Electrodeposition of CdTe thin film from acetate-based ionic liquid bath

Science.gov (United States)

Waldiya, Manmohansingh; Bhagat, Dharini; Mukhopadhyay, Indrajit

2018-05-01

CdTe being a direct band gap semiconductor, is mostly used in photovoltaics. Here we present, the synthesis of CdTe thin film on fluorine doped tin oxide (FTO) substrate potentiostatically using 1-butyl-3-methylimidazolium acetate ([Bmim][Ac]) ionic liquid (IL) bath at 90 °C. Major advantages of using electrodeposition involves process simplicity, large scalability & economic viability. Some of the benefits offered by IL electrolytic bath are low vapour pressure, wide electrochemical window, and good ionic mobility. Cd(CH3COO)2 (anhydrous) and TeO2 were used as the source precursors. The IL electrolytic bath temperature was kept at 90 °C for deposition, owing to the limited solubility of TeO2 in [Bmim][Ac] IL at room temperature. Cathodic electrodeposition was carried out using a three electrode cell setup at a constant potential of -1.20 V vs. platinum (Pt) wire. The CdTe/FTO thin film were annealed in argon (Ar) atmosphere. Optical study of nanostructured CdTe film were done using UV-Vis-IR and Raman spectroscopy. Raman analysis confirms the formation of CdTe having surface optics (SO) mode at 160.6 cm-1 and transverse optics (TO) mode at 140.5 cm-1. Elemental Te peaks at 123, 140.5 and 268 cm-1 were also observed. The optical band gap of Ar annealed CdTe thin film were found to be 1.47 eV (absorbance band edge ˜ 846 nm). The optimization of deposition parameters using acetate-based IL electrolytic bath to get nearly stoichiometric CdTe thin film is currently being explored.

CDTE alloys and their application for increasing solar cell performance

Science.gov (United States)

Swanson, Drew E.

Cadmium Telluride (CdTe) thin film solar is the largest manufactured solar cell technology in the United States and is responsible for one of the lowest costs of utility scale solar electricity at a purchase agreement of $0.0387/kWh. However, this cost could be further reduced by increasing the cell efficiency. To bridge the gap between the high efficiency technology and low cost manufacturing, a research and development tool and process was built and tested. This fully automated single vacuum PV manufacturing tool utilizes multiple inline close space sublimation (CSS) sources with automated substrate control. This maintains the proven scalability of the CSS technology and CSS source design but with the added versatility of independent substrate motion. This combination of a scalable deposition technology with increased cell fabrication flexibility has allowed for high efficiency cells to be manufactured and studied. The record efficiency of CdTe solar cells is lower than fundamental limitations due to a significant deficit in voltage. It has been modeled that there are two potential methods of decreasing this voltage deficiency. The first method is the incorporation of a high band gap film at the back contact to induce a conduction-band barrier that can reduce recombination by reflecting electrons from the back surface. The addition of a Cd1-x MgxTe (CMT) layer at the back of a CdTe solar cell should induce this desired offset and reflect both photoelectrons and forward-current electrons away from the rear surface. Higher collection of photoelectrons will increase the cells current and the reduction of forward current will increase the cells voltage. To have the optimal effect, CdTe must have reasonable carrier lifetimes and be fully depleted. To achieve this experimentally, CdTe layers have been grown sufficiently thin to help produce a fully depleted cell. A variety of measurements including performance curves, transmission electron microscopy, x

Gamma radiation detectors for safeguards applications

International Nuclear Information System (INIS)

Carchon, R.; Moeslinger, M.; Bourva, L.; Bass, C.; Zendel, M.

2007-01-01

The IAEA uses extensively a variety of gamma radiation detectors to verify nuclear material. These detectors are part of standardized spectrometry systems: germanium detectors for High-Resolution Gamma Spectrometry (HRGS); Cadmium Zinc Telluride (CZT) detectors for Room Temperature Gamma Spectrometry (RTGS); and NaI(Tl) detectors for Low Resolution Gamma Spectrometry (LRGS). HRGS with high-purity Germanium (HpGe) detectors cooled by liquid nitrogen is widely used in nuclear safeguards to verify the isotopic composition of plutonium or uranium in non-irradiated material. Alternative cooling systems have been evaluated and electrically cooled HpGe detectors show a potential added value, especially for unattended measurements. The spectrometric performance of CZT detectors, their robustness and simplicity are key to the successful verification of irradiated materials. Further development, such as limiting the charge trapping effects in CZT to provide improved sensitivity and energy resolution are discussed. NaI(Tl) detectors have many applications-specifically in hand-held radioisotope identification devices (RID) which are used to detect the presence of radioactive material where a lower resolution is sufficient, as they benefit from a generally higher sensitivity. The Agency is also continuously involved in the review and evaluation of new and emerging technologies in the field of radiation detection such as: Peltier-cooled CdTe detectors; semiconductor detectors operating at room temperature such as HgI 2 and GaAs; and, scintillator detectors using glass fibres or LaBr 3 . A final conclusion, proposing recommendations for future action, is made

Improved spectrometric characteristics of thallium bromide nuclear radiation detectors

CERN Document Server

Hitomi, K; Shoji, T; Suehiro, T; Hiratate, Y

1999-01-01

Thallium bromide (TlBr) is a compound semiconductor with a high atomic number and wide band gap. In this study, nuclear radiation detectors have been fabricated from the TlBr crystals. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using the materials purified by many pass zone refining. The crystals were characterized by measuring the resistivity, the mobility-lifetime (mu tau) product and the energy required to create an electron-hole pair (the epsilon value). Improved energy resolution has been obtained by the TlBr radiation detectors. At room temperature the full-width at half-maximum (FWHM) for the 59.5, 122 and 662 keV gamma-ray photo peak obtained from the detectors were 3.3, 8.8 and 29.5 keV, respectively. By comparing the saturated peak position of the TlBr detector with that of the CdTe detector, the epsilon value has been estimated to be about 5.85 eV for the TlBr crystal.

An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

Energy Technology Data Exchange (ETDEWEB)

Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)

2009-09-07

The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

International Nuclear Information System (INIS)

Guerra, P; Santos, A; Darambara, D G

2009-01-01

The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm 3 CdZnTe pixellated detector.

Modelling and simulation of pixelated photon counting X-ray detectors for imaging; Modellierung und Simulation physikalischer Eigenschaften photonenzaehlender Roentgenpixeldetektoren fuer die Bildgebung

Energy Technology Data Exchange (ETDEWEB)

Durst, Juergen

2008-07-22

First of all the physics processes generating the energy deposition in the sensor volume are investigated. The spatial resolution limits of photon interactions and the range of secondary electrons are discussed. The signatures in the energy deposition spectrum in pixelated detectors with direct conversion layers are described. The energy deposition for single events can be generated by the Monte-Carlo-Simulation package ROSI. The basic interactions of photons with matter are evaluated, resulting in the ability to use ROSI as a basis for the simulation of photon counting pixel detectors with direct conversion. In the context of this thesis a detector class is developed to simulate the response of hybrid photon counting pixel detectors using high-Z sensor materials like Cadmium Telluride (CdTe) or Gallium Arsenide (GaAs) in addition to silicon. To enable the realisation of such a simulation, the relevant physics processes and properties have to be implemented: processes in the sensor layer (provided by EGS4/LSCAT in ROSI), generation of charge carriers as electron hole pairs, diffusion and repulsion of charge carriers during drift and lifetime. Furthermore, several noise contributions of the electronics can be taken into account. The result is a detector class which allows the simulation of photon counting detectors. In this thesis the multiplicity framework is developed, including a formula to calculate or measure the zero frequency detective quantum efficiency (DQE). To enable the measurement of the multiplicity of detected events a cluster analysis program was developed. Random and systematic errors introduced by the cluster analysis are discussed. It is also shown that the cluster analysis method can be used to determine the averaged multiplicity with high accuracy. The method is applied to experimental data. As an example using the implemented detector class, the discriminator threshold dependency of the DQE and modulation transfer function is investigated in

Performance and Metastability of CdTe Solar Cells with a Te Back-Contact Buffer Layer

Science.gov (United States)

Moore, Andrew

Thin-film CdTe photovoltaics are quickly maturing into a viable clean-energy solution through demonstration of competitive costs and performance stability with existing energy sources. Over the last half decade, CdTe solar technology has achieved major gains in performance; however, there are still aspects that can be improved to progress toward their theoretical maximum efficiency. Perhaps equally valuable as high photovoltaic efficiency and a low levelized cost of energy, is device reliability. Understanding the root causes for changes in performance is essential for accomplishing long-term stability. One area for potential performance enhancement is the back contact of the CdTe device. This research incorporated a thin-film Te-buffer layer into the contact structure, between the CdTe and contact metal. The device performance and characteristics of many different back contact configurations were rigorously studied. CdTe solar cells fabricated with the Te-buffer contact showed short-circuit current densities and open-circuit voltages that were on par with the traditional back-contacts used at CSU. However, the Te-buffer contact typically produced 2% larger fill-factors on average, leading to greater conversation efficiency. Furthermore, using the Te buffer allowed for incorporation of 50% less Cu, which is used for p-type doping but is also known to decrease lifetime and stability. This resulted in an additional 3% fill-factor gain with no change in other parameters compared to the standard-Cu treated device. In order to better understand the physical mechanisms of the Te-buffer contact, electrical and material properties of the Te layer were extracted and used to construct a simple energy band diagram. The Te layer was found to be highly p-type (>1018 cm-3) and possess a positive valence-band offset of 0.35-0.40 eV with CdTe. An existing simulation model incorporating the Te-layer properties was implemented and validated by comparing simulated results of CdTe

Development of a counting pixel detector for 'Digitales Roentgen'

International Nuclear Information System (INIS)

Lindner, M.

2001-08-01

The development of a single photon counting X-ray imaging detector for medical applications using hybrid pixel detectors is reported. The electronics development from the first prototype derived from detector development for particle physics experiments (ATLAS) to the imaging chip MPEC (multi picture element counters) for medical applications is described. This chip consists of 32 x 32 pixels of 200 μm x 200 μm size, each containing the complete read out electronics, i.e. an amplifier, two discriminators with adjustable thresholds and two 18-bit linear feedback shift-counters allowing energy windowing for contrast increase. Results on electronics performance are shown as well as measurements with several semiconductor materials (Si, GaAs, CdTe). Important aspects like detection efficiency, sensor homogeneity, linearity and spatial resolution are discussed. (orig.)

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

2014-09-15

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

International Nuclear Information System (INIS)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude

2014-01-01

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Flat detectors and their clinical applications

International Nuclear Information System (INIS)

Spahn, Martin

2005-01-01

Diagnostic and interventional flat detector X-ray systems are penetrating the market in all application segments. First introduced in radiography and mammography, they have conquered cardiac and general angiography and are getting increasing attention in fluoroscopy. Two flat detector technologies prevail. The dominating method is based on an indirect X-ray conversion process, using cesium iodide scintillators. It offers considerable advantages in radiography, angiography and fluoroscopy. The other method employs a direct converter such as selenium which is particularly suitable for mammography. Both flat detector technologies are based on amorphous silicon active pixel matrices. Flat detectors facilitate the clinical workflow in radiographic rooms, foster improved image quality and provide the potential to reduce dose. This added value is based on their large dynamic range, their high sensitivity to X-rays and the instant availability of the image. Advanced image processing is instrumental in these improvements and expand the range of conventional diagnostic methods. In angiography and fluoroscopy the transition from image intensifiers to flat detectors is facilitated by ample advantages they offer, such as distortion-free images, excellent coarse contrast, large dynamic range and high X-ray sensitivity. These characteristics and their compatibility with strong magnetic fields are the basis for improved diagnostic methods and innovative interventional applications. (orig.)

Metastability and reliability of CdTe solar cells

Science.gov (United States)

Guo, Da; Brinkman, Daniel; Shaik, Abdul R.; Ringhofer, Christian; Vasileska, Dragica

2018-04-01

Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers devote significant empirical efforts to study these phenomena and to improve semiconductor device stability. Still, understanding the underlying reasons of these instabilities remains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most commonly alleged causes of metastability in CdTe devices, such as ‘migration of Cu’, have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses suggesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe provide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic defects; for example, changing the state of an impurity from an interstitial donor to a substitutional acceptor often is accompanied by generation of a compensating intrinsic interstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal

Current simulation of symmetric contacts on CdTe

International Nuclear Information System (INIS)

Ruzin, A.

2011-01-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Current simulation of symmetric contacts on CdTe

Energy Technology Data Exchange (ETDEWEB)

Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

2011-12-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Enhanced glutathione content allows the in vivo synthesis of fluorescent CdTe nanoparticles by Escherichia coli.

Directory of Open Access Journals (Sweden)

Juan P Monrás

Full Text Available The vast application of fluorescent semiconductor nanoparticles (NPs or quantum dots (QDs has prompted the development of new, cheap and safer methods that allow generating QDs with improved biocompatibility. In this context, green or biological QDs production represents a still unexplored area. This work reports the intracellular CdTe QDs biosynthesis in bacteria. Escherichia coli overexpressing the gshA gene, involved in glutathione (GSH biosynthesis, was used to produce CdTe QDs. Cells exhibited higher reduced thiols, GSH and Cd/Te contents that allow generating fluorescent intracellular NP-like structures when exposed to CdCl(2 and K(2TeO(3. Fluorescence microscopy revealed that QDs-producing cells accumulate defined structures of various colors, suggesting the production of differently-sized NPs. Purified fluorescent NPs exhibited structural and spectroscopic properties characteristic of CdTe QDs, as size and absorption/emission spectra. Elemental analysis confirmed that biosynthesized QDs were formed by Cd and Te with Cd/Te ratios expected for CdTe QDs. Finally, fluorescent properties of QDs-producing cells, such as color and intensity, were improved by temperature control and the use of reducing buffers.

A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

Energy Technology Data Exchange (ETDEWEB)

Liu Yan [Jilin Province Research Center for Engineering and Technology of Spectral Analytical Instruments, Jilin University, Changchun 130023 (China); Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012 (China); Yu Dongdong [1st Hopstail affiliated to Jilin University, Jilin University, Changchun 130023 (China); Zhou Jianguang [Research Center for Analytical Instrumentation, Zhejiang University, Hangzhou 310058 (China)], E-mail: liuxy@jlu.edu.cn, E-mail: jgzhou70@126.com

2008-06-18

One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

A facile and green preparation of high-quality CdTe semiconductor nanocrystals at room temperature

International Nuclear Information System (INIS)

Liu Yan; Shen Qihui; Shi Weiguang; Li Jixue; Liu Xiaoyang; Yu Dongdong; Zhou Jianguang

2008-01-01

One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals

SYNTHESIS AND CHARACTERIZATION OF CdTe QUANTUM ...

African Journals Online (AJOL)

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variables, including pH values, Cd/Te and Cd/Cys molar ratios, on the ... QDs requires nitrogen as the protective gas at the initial stage. ... three-fold volume isopropyl alcohol, and the sediment was collected after centrifugation at 4000.

Excitons in tunnel coupled CdTe and (Cd,Mn)Te quantum wells

Energy Technology Data Exchange (ETDEWEB)

Terletskii, Oleg; Ryabchenko, Sergiy; Tereshchenko, Oleksandr [Institute of Physics NASU, pr. Nauki 46, 03680 Kyiv (Ukraine); Sugakov, Volodymyr; Vertsimakha, Ganna [Institute for Nuclear Research NASU, pr. Nauki 47, 03680 Kyiv (Ukraine); Karczewski, Grzegorz [Institute of Physics PAS, Al. Lotnikow 32/46, PL-02-668 Warsaw (Poland)

2017-05-15

The photoluminescence (PL) from structures containing Cd{sub 0.95}Mn{sub 0.05}Te and CdTe quantum wells (QWs) separated by a narrow (1.94 nm) barrier was studied. The PL lines of comparable intensities from several possible exciton states were observed simultaneously at energy distances substantially exceeding kT. This means that the energy transfer in the studied systems is slower than the radiative recombination of the confined excitons. For the CdTe QW width of about 8.7-9 nm, indirect excitons with the electron and heavy hole chiefly localized in the CdTe and Cd{sub 1-x}Mn{sub x}Te QWs, respectively, were detected in the magnetic field. These indirect excitons have PL energy of about 10-20 meV above the PL line of the direct excitons in the CdTe QW. The observation of the PL from the indirect excitons which are not the lowest excitations in the structure is a distinctive feature of the system. Photoluminescence intensity dependence on the energy and the magnetic field. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Photoluminescence measurement of polycrystalline CdTe made of high purity source material

Energy Technology Data Exchange (ETDEWEB)

Hempel, Hannes; Kraft, Christian; Heisler, Christoph; Geburt, Sebastian; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, Friedrich Schiller Universitaet Jena, Helmholtzweg 3, 07743 Jena (Germany)

2012-07-01

CdTe is a common material for thin film solar cells. However, the mainly used CdTe source material is known to contain a high number of intrinsic defects and impurities. In this work we investigate the defect structure of high purity CdTe by means of Photoluminescence, which is a common method to detect the energy levels of defects in the band gap of semiconductors. We used a 633 nm HeNe-Laser at sample temperatures of 8 K. The examined samples were processed in a new vacuum system based on the PVD method. They yield significantly different spectra on as-grown samples compared to those measured on samples which are grown by the standard process, since the double peak at 1.55 eV was hardly detectable and the A-center correlated transition vanished. Instead a peak at 1.50 eV with pronounced phonon coupling was observed. The 1.50 eV peak is known from other measurements but has not been characterized so far. The intention of this work is to characterize this new feature and the influence of post deposition treatments of the CdTe layers on the PL spectra.

Investigation of the chlorine A-Center in polycrystalline CdTe layers by photoluminescence spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Kraft, Christian; Metzner, Heiner; Haedrich, Mathias [Institut fuer Festkoerperphysik, Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Schley, Pascal [Institut fuer Physik, Technische Universitaet Ilmenau, 98684 Ilmenau (Germany); Goldhahn, Ruediger [Institut fuer Experimentelle Physik, Universitaet Magdeburg, 39016 Magdeburg (Germany)

2012-07-01

Polycrystalline CdTe is a well known absorber material for thin film solar cells. However, the improvement of CdTe-based solar cells for industrial application is mainly based on empirical enhancements of certain process steps which are not concerning the absorber itself. Hence, the defect structure of CdTe is still not understood in detail. One of the most discussed defects in CdTe is the so called chlorine A-center. In general, the A-Center describes a defect complex of the intrinsic cadmium vacancy defect and an extrinsic impurity. By means of photoluminescence spectroscopy at temperatures of 5 K we investigated the behavior of the chlorine A-center under different CdTe activation techniques. Therefore, we were able to determine the electronic level of that defect and to analyze its influence on the crystal quality and the functionality of solar cells that were prepared of the corresponding samples.

Facile aqueous synthesis and growth mechanism of CdTe nanorods

International Nuclear Information System (INIS)

Gong Haibo; Hao Xiaopeng; Gao Chang; Wu Yongzhong; Du Jie; Xu Xiangang; Jiang Minhua

2008-01-01

Single-crystal CdTe nanorods with diameters of 50-100 nm were synthesized under a surfactant-assisted hydrothermal condition. The experimental results indicated that with a temporal dependence the morphologies of CdTe nanocrystallites changed from nanoparticles to smooth surface nanorods. The crystal structure, morphology and optical properties of the products were investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM) and fluorescence spectrophotometer. Furthermore, the formation mechanisms of the nanorods were investigated and discussed on the basis of the experimental results.

Tutorial on X-ray photon counting detector characterization.

Science.gov (United States)

Ren, Liqiang; Zheng, Bin; Liu, Hong

2018-01-01

Recent advances in photon counting detection technology have led to significant research interest in X-ray imaging. As a tutorial level review, this paper covers a wide range of aspects related to X-ray photon counting detector characterization. The tutorial begins with a detailed description of the working principle and operating modes of a pixelated X-ray photon counting detector with basic architecture and detection mechanism. Currently available methods and techniques for charactering major aspects including energy response, noise floor, energy resolution, count rate performance (detector efficiency), and charge sharing effect of photon counting detectors are comprehensively reviewed. Other characterization aspects such as point spread function (PSF), line spread function (LSF), contrast transfer function (CTF), modulation transfer function (MTF), noise power spectrum (NPS), detective quantum efficiency (DQE), bias voltage, radiation damage, and polarization effect are also remarked. A cadmium telluride (CdTe) pixelated photon counting detector is employed for part of the characterization demonstration and the results are presented. This review can serve as a tutorial for X-ray imaging researchers and investigators to understand, operate, characterize, and optimize photon counting detectors for a variety of applications.

CdTe and CdZnTe detectors in nuclear medicine

CERN Document Server

Scheiber, C

2000-01-01

Nuclear medicine diagnostic applications are growing in search for more disease specific or more physiologically relevant imaging. The data are obtained non-invasively from large field gamma cameras or from miniaturised probes. As far as single photon emitters are concerned, often labelled with sup 9 sup 9 sup m Tc (140 keV, gamma), nuclear instrumentation deals with poor counting statistics due to the method of spatial localisation and low contrast to noise due to scatter in the body. Since the 1960s attempts have been made to replace the NaI scintillator by semiconductor detectors with better spectrometric characteristics to improve contrast and quantitative measurements. They allow direct conversion of energy and thus more compact sensors. Room-temperature semiconductor detectors such as cadmium tellure and cadmium zinc tellure have favourable physical characteristics for medical applications which have been investigated in the 1980s. During one decade, they have been used in miniaturised probes such as fo...

Heavy doping of CdTe single crystals by Cr ion implantation

Science.gov (United States)

Popovych, Volodymyr D.; Böttger, Roman; Heller, Rene; Zhou, Shengqiang; Bester, Mariusz; Cieniek, Bogumil; Mroczka, Robert; Lopucki, Rafal; Sagan, Piotr; Kuzma, Marian

2018-03-01

Implantation of bulk CdTe single crystals with high fluences of 500 keV Cr+ ions was performed to achieve Cr concentration above the equilibrium solubility limit of this element in CdTe lattice. The structure and composition of the implanted samples were studied using secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) to characterize the incorporation of chromium into the host lattice and to investigate irradiation-induced damage build-up. It was found that out-diffusion of Cr atoms and sputtering of the targets alter the depth distribution and limit concentration of the projectile ions in the as-implanted samples. Appearance of crystallographically oriented, metallic α-Cr nanoparticles inside CdTe matrix was found after implantation, as well as a strong disorder at the depth far beyond the projected range of the implanted ions.

Exploration of Pixelated detectors for double beta decay searches within the COBRA experiment

Energy Technology Data Exchange (ETDEWEB)

Schwenke, M., E-mail: schwenke@asp.tu-dresden.de [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); Zuber, K.; Janutta, B. [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); He, Z.; Zeng, F. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2104 (United States); Anton, G.; Michel, T.; Durst, J.; Lueck, F.; Gleixner, T. [Erlangen Centre for Astroparticle Physics, Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erwin-Rommel-Str. 1, 91058 Erlangen (Germany); Goessling, C.; Schulz, O.; Koettig, T. [Technische Universitaet Dortmund, Physik E IV, 44221 Dortmund (Germany); Krawczynski, H.; Martin, J. [Department of Physics, Washington University in St. Louis, Campus Box 1105, One Brookings Drive, St. Louis, MO 63130-4899 (United States); Stekl, I.; Cermak, P. [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 128 00 Prague (Czech Republic)

2011-09-11

The aim of the COBRA experiment is the search for neutrinoless double beta decay events in Cadmium Zinc Telluride (CdZnTe) room temperature semiconductor detectors. The development of pixelated detectors provides the potential for clear event identification and thus major background reduction. The tracking option of a semiconductor is a unique approach in this field. For initial studies, several possible detector systems are considered with a special regard for low background applications: the large volume system Polaris with a pixelated CdZnTe sensor, Timepix detectors with Si and enriched CdTe sensor material and a CdZnTe pixel system developed at the Washington University in St. Louis, USA. For all detector systems first experimental background measurements taken at underground laboratories (Gran Sasso Underground Laboratory in Italy, LNGS and the Niederniveau Messlabor Felsenkeller in Dresden, Germany) and additionally for the Timepix detectors simulation results are presented.

Study and optimisation of the high energy detector in Cd(Zn)Te of the Simbol-X space mission for X and gamma astronomy

International Nuclear Information System (INIS)

Meuris, A.

2009-09-01

Stars in final phases of evolution are sites of highest energetic phenomena of the Universe. The understanding of their mechanisms is based on the observation of the X and gamma rays from the sources. The Simbol-X French-Italian project is a novel concept of telescope with two satellites flying in formation. This space mission combines upgraded optics from X-ray telescopes with detection Systems from gamma-ray telescopes. CEA Saclay involved in major space missions for gamma astronomy is in charge of the definition and the design of the High Energy Detector (HED) of Simbol-X to cover the spectral range from 8 to 80 keV. Two generations of micro-cameras called Caliste have been designed, fabricated and tested. They integrate cadmium telluride (CdTe) crystals and optimised front-end electronics named Idef-X. The hybridization technique enables to put them side by side as a mosaic to achieve for the first time a CdTe detection plane with fine spatial resolution (600 μm) and arbitrarily large surface. By setting up test benches and leading test campaigns, I was involved in the fabrication of Caliste prototypes and I assessed temporal, spatial and spectral resolutions. At the conclusion of experiments and simulations, I propose a detector type, operating conditions and digital processing on board the spacecraft to optimise HED performance. The best detector candidate is CdTe Schottky, well suited to high resolution spectroscopy; however, it suffers from lost in stability during biasing. Beyond Simbol-X mission, I studied theoretically and experimentally this kind of detector to build an updated model that can apply to other projects of gamma spectroscopy and imaging. (author)

Recent state of CdTe-based radiation detectors

International Nuclear Information System (INIS)

Ohno, R.

2004-01-01

Recent state for development of CdTe-based radiation detectors is reviewed. The progress of the technologies such as the crystal growth of CdTe and CdZnTe, the deposition of electrodes on the crystal, the design of read out ASIC, and the bonding between crystal and ASIC, opened the way for the development of imaging devices for practical uses. A X-ray imager for non destructive inspections and a gamma ray imager for small animal radioisotope experiments or nuclear medicine are presented as examples. (author)

Clinical dosimeter based on diamond detector

International Nuclear Information System (INIS)

Chervjakov, A.M.; Ljalina, L.I.; Ljutina, G.J.; Khrunov, V.S.; Martynov, S.S.; Popov, S.A.

2002-01-01

Full text: Diamond detectors have found application in the relative dosimetry and their parameters have been described elsewhere. Today, the exclusive producer of the diamond detector is the Institute of Physical and Technical Problems, Russia, and exclusive dealer is the PTW-Freiburg. The main features of the diamond detector are good long time stability, suitable range of the energy dependence for photon and electron beams in clinical use, independence of the measured date from temperature and pressure. The high sensitivity per volume unit of the diamond detector (1500 times higher than ionization chamber) allowed using detectors with very small volume (1-5 mm 3 ) and rather simple electronics for ionization current registration. The new dosimeter consists of the diamond detector itself, 40 m registration cable, pre-amplifier, micro-processor block for data handling and absorbed dose calculation using the calibration factor of diamond detector in terms of absorbed dose to water. Dosimeter has the possibility to work with PC using standard RS-232 interface. The main features of the dosimeter are as follows: the range of dose rate measurements for photon, electron and proton beams is within 0.01-1.0 Gy/s; the energy ranges for photons are 0.08-25 MeV, and 4-25 MeV for electrons, with energy dependence no more than ±2%; the main uncertainty of the dose measurements is within ±2%; the pre-irradiation dose for diamond detector is no more than 10 Gy; the sensitive volume of the used diamond detectors is within 1-5 mm 3 ; the weight of the dosimeter no more than 2 kg. The new dosimeter was evaluated at the Central Research Institute of Roentgenology and Radiology, St. Petersburg, Russia to verify its performance. The dosimeter was used as a reference instrument for dose measurements at Cobalt-60 unit, SL75-5 and SL-20 linear accelerators and the test results have shown that the device have met the specifications. It is planned to produce dosimeter as serial device by

Caliste 64, a new CdTe micro-camera for hard X-ray spectro-imaging

Science.gov (United States)

Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Blondel, C.; Pinsard, F.; Vassal, M. C.; Soufflet, F.; Le Mer, I.

2009-10-01

In the frame of the Simbol-X mission of hard X-ray astrophysics, a prototype of micro-camera with 64 pixels called Caliste 64 has been designed and several samples have been tested. The device integrates ultra-low-noise IDeF-X V1.1 ASICs from CEA and a 1 cm 2 Al Schottky CdTe detector from Acrorad because of its high uniformity and spectroscopic performance. The process of hybridization, mastered by the 3D Plus company, respects space applications standards. The camera is a spectro-imager with time-tagging capability. Each photon interacting in the semiconductor is tagged with a time, a position and an energy. Time resolution is better than 100 ns rms for energy deposits greater than 20 keV, taking into account electronic noise and technological dispersal of the front-end electronics. The spectrum summed across the 64 pixels results in an energy resolution of 664 eV fwhm at 13.94 keV and 842 eV fwhm at 59.54 keV, when the detector is cooled down to -10 °C and biased at -500 V.

Caliste 64, a new CdTe micro-camera for hard X-ray spectro-imaging

International Nuclear Information System (INIS)

Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Blondel, C.; Pinsard, F.; Vassal, M.C.; Soufflet, F.; Le Mer, I.

2009-01-01

In the frame of the Simbol-X mission of hard X-ray astrophysics, a prototype of micro-camera with 64 pixels called Caliste 64 has been designed and several samples have been tested. The device integrates ultra-low-noise IDeF-X V1.1 ASICs from CEA and a 1 cm 2 Al Schottky CdTe detector from Acrorad because of its high uniformity and spectroscopic performance. The process of hybridization, mastered by the 3D Plus company, respects space applications standards. The camera is a spectro-imager with time-tagging capability. Each photon interacting in the semiconductor is tagged with a time, a position and an energy. Time resolution is better than 100 ns rms for energy deposits greater than 20 keV, taking into account electronic noise and technological dispersal of the front-end electronics. The spectrum summed across the 64 pixels results in an energy resolution of 664 eV fwhm at 13.94 keV and 842 eV fwhm at 59.54 keV, when the detector is cooled down to -10 deg. C and biased at -500 V.

Caliste 64, a new CdTe micro-camera for hard X-ray spectro-imaging

Energy Technology Data Exchange (ETDEWEB)

Meuris, A. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France)], E-mail: aline.meuris@cea.fr; Limousin, O. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France); Lugiez, F.; Gevin, O. [CEA, Irfu, Service d' Electronique, de Detecteurs et d' Informatique, F-91191 Gif-sur-Yvette (France); Blondel, C.; Pinsard, F. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France); Vassal, M.C.; Soufflet, F. [3D Plus, 641 rue Helene Boucher, F-78532 Buc (France); Le Mer, I. [CEA, Irfu, Service d' Astrophysique, Bat. 709, Orme des Merisiers, F-91191 Gif-sur-Yvette (France)

2009-10-21

In the frame of the Simbol-X mission of hard X-ray astrophysics, a prototype of micro-camera with 64 pixels called Caliste 64 has been designed and several samples have been tested. The device integrates ultra-low-noise IDeF-X V1.1 ASICs from CEA and a 1 cm{sup 2} Al Schottky CdTe detector from Acrorad because of its high uniformity and spectroscopic performance. The process of hybridization, mastered by the 3D Plus company, respects space applications standards. The camera is a spectro-imager with time-tagging capability. Each photon interacting in the semiconductor is tagged with a time, a position and an energy. Time resolution is better than 100 ns rms for energy deposits greater than 20 keV, taking into account electronic noise and technological dispersal of the front-end electronics. The spectrum summed across the 64 pixels results in an energy resolution of 664 eV fwhm at 13.94 keV and 842 eV fwhm at 59.54 keV, when the detector is cooled down to -10 deg. C and biased at -500 V.

Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

International Nuclear Information System (INIS)

Oliveira, Icimone B.

2011-01-01

The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

Recent advances in Tl Br, Cd Te and CdZnTe semiconductor radiation detectors: a review

Energy Technology Data Exchange (ETDEWEB)

Oliveira, Icimone B. [Universidade Bandeirante (UNIBAN), Sao Paulo, SP (Brazil)

2011-07-01

The success in the development of radiation spectrometers operating at room temperature is based on many years of effort on the part of large numbers of workers around the world. These individuals have contributed to the understanding of the fundamental materials issues associated with the growth of semiconductors for this application, the development of device fabrication and processing technology, and advances in low noise electronics and pulse processing. Progress in this field continues at an accelerated pace, as in evidenced by the improvements in detector performance and by the growing number of commercial products. Thus, the last years have been seen continued effort in the development of room temperature compound semiconductors devices. High-Z compound semiconductor detectors has been explored for high energy resolution, high detection efficiency and are of low cost. Compound semiconductors detectors are well suited for addressing needs of demanding applications such as bore hole logging where high operating temperature are encountered. In this work recent developments in semiconductors detectors were reviewed. This review concentrated on thallium bromide (TlBr), cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) crystals detectors. TlBr has higher stopping power compared to common semiconductor materials because it has the higher photoelectric and total attenuation coefficients over wide energy range from 100 keV to 1 MeV. CdTe and CdZnTe detectors have several attractive features for detecting X-ray and low energy gamma ray. Their relatively large band gaps lead to a relatively low leakage current and offer an excellent energy resolution at room temperature. A literature survey and bibliography was also included. (author)

Use of various device geometries to improve the performance of CdTe detectors

International Nuclear Information System (INIS)

Zanio, K.

1977-01-01

Cadmium telluride detectors were fabricated from semi-insulating material (rho>10 7 Ω.cm) with different geometries. So as to take advantages of the superior mobility-trapping time products of electrons (equal to 6.10x10 -4 cm 2 /V) as compared to those of holes approximately 5x10 -6 cm 2 /V) and suit different ranges of photon energies. In the case of X-ray detectors, plane parallel devices were fabricated with active areas up to 3cm 2 . For the case of high energy more penetrating radiation, cube shaped detectors, having nonuniform electric fields, were fabricated. Arrays were also made from such cubes to evaluate their potential use in imaging applications at room temperature. Where a small frontal area but high efficiency is required, such as in ablation studies for reentry vehicles, bar-shaped detectors, 3mmx7mm and up to 2cm in length are appropriate and were also fabricated

Recent Developments of Flexible CdTe Solar Cells on Metallic Substrates: Issues and Prospects

Directory of Open Access Journals (Sweden)

M. M. Aliyu

2012-01-01

Full Text Available This study investigates the key issues in the fabrication of CdTe solar cells on metallic substrates, their trends, and characteristics as well as effects on solar cell performance. Previous research works are reviewed while the successes, potentials, and problems of such technology are highlighted. Flexible solar cells offer several advantages in terms of production, cost, and application over glass-based types. Of all the metals studied as substrates for CdTe solar cells, molybdenum appears the most favorable candidate, while close spaced sublimation (CSS, electrodeposition (ED, magnetic sputtering (MS, and high vacuum thermal evaporation (HVE have been found to be most common deposition technologies used for CdTe on metal foils. The advantages of these techniques include large grain size (CSS, ease of constituent control (ED, high material incorporation (MS, and low temperature process (MS, HVE, ED. These invert-structured thin film CdTe solar cells, like their superstrate counterparts, suffer from problems of poor ohmic contact at the back electrode. Thus similar strategies are applied to minimize this problem. Despite the challenges faced by flexible structures, efficiencies of up to 13.8% and 7.8% have been achieved in superstrate and substrate cell, respectively. Based on these analyses, new strategies have been proposed for obtaining cheaper, more efficient, and viable flexible CdTe solar cells of the future.

Numerical Analysis of Novel Back Surface Field for High Efficiency Ultrathin CdTe Solar Cells

Directory of Open Access Journals (Sweden)

M. A. Matin

2013-01-01

Full Text Available This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures. A modified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu2Te and low bandgap materials like As2Te3 and Sb2Te3 have been used as BSF to reduce minority carrier recombination loss at the back contact in ultra-thin CdTe cells. In this analysis the highest conversion efficiency of CdTe based PV cell without BSF has been found to be around 17% using CdTe absorber thickness of 5 μm. However, the proposed structures with different BSF have shown acceptable efficiencies with an ultra-thin CdTe absorber of only 0.6 μm. The proposed structure with As2Te3 BSF showed the highest conversion efficiency of 20.8% ( V,  mA/cm2, and . Moreover, the proposed structures have shown improved stability in most extents, as it was found that the cells have relatively lower negative temperature coefficient. However, the cell with ZnTe BSF has shown better overall stability than other proposed cells with temperature coefficient (TC of −0.3%/°C.

Application of cadmium telluride detectors to high energy computed tomography

International Nuclear Information System (INIS)

Glasser, F.; Thomas, G.; Cuzin, M.; Verger, L.

1991-01-01

15 years ago, Cadmium Telluride detectors have been investigated in our laboratory as possible detectors for medical scanners [1]. Today most of these machines are using high pressure Xenon gas as multicells detectors, BGO or CdWO 4 scintillators for industrial computerized tomography. Xenon gas detectors are well suited for detection of 100 KeV X-rays and enables to build 1000 cells homogeneous detector with a dynamic range of 3 decades. BGO and CdWO 4 scintillators, associated with photomultipliers or photodiodes are used for higher energy (400 KeV). They present a low afterglow and a dynamic range of 4 to 5 decades. Non destructive testing of very absorbing objects (eg 2 m diameter solid rocket motor) by X-ray tomography requires much higher energy X-rays (16 MeV) and doses up to 12000 rads/min at 1 meter. For this application Cadmium Telluride detectors operating as photoconductors are well suited. A prototype of tomograph machine, able to scan 0.5 m diameter high density objects has been realized with 25 CdTe detectors (25x15x0.8 mm 3 ). It produces good quality 1024x1024 tomographic images

Ecotoxicity of CdTe quantum dots to freshwater mussels: Impacts on immune system, oxidative stress and genotoxicity

International Nuclear Information System (INIS)

Gagne, F.; Auclair, J.; Turcotte, P.; Fournier, M.; Gagnon, C.; Sauve, S.; Blaise, C.

2008-01-01

The purpose of this study was to examine the toxic effects of cadmium-telluride (CdTe) quantum dots on freshwater mussels. Elliption complanata mussels were exposed to increasing concentrations of CdTe (0, 1.6, 4 and 8 mg/L) and cadmium sulfate (CdSO 4 , 0.5 mg/L) for 24 h at 15 o C. After the exposure period, they were removed for assessments of immunocompetence, oxidative stress (lipid peroxidation) and genotoxicity (DNA strand breaks). Preliminary experiments revealed that CdTe dissolved in aquarium water tended to aggregate in the particulate phase (85%) while 15% of CdTe was found in the dissolved phase. Immunotoxicity was characterized by a significant decrease in the number of hemocytes capable of ingesting fluorescent beads, and hemocyte viability. The cytotoxic capacity of hemocytes to lyse mammalian K-562 cells was significantly increased, but the number of circulating hemocytes remained unchanged. Lipid peroxidation was significantly increased at a threshold concentration of 5.6 mg/L in gills and significantly reduced in digestive glands at a threshold concentration <1.6 mg/L CdTe. The levels of DNA strand breaks were significantly reduced in gills at <1.6 mg/L CdTe. In digestive glands, a transient but marginal increase in DNA strand breaks occurred at the lowest concentration and dropped significantly at the higher concentrations. A multivariate analysis revealed that the various response patterns differed based on the concentration of CdTe, thus permitting the identification of biomarkers associated with the form (colloidal vs. molecular) of cadmium

Ecotoxicity of CdTe quantum dots to freshwater mussels: Impacts on immune system, oxidative stress and genotoxicity

Energy Technology Data Exchange (ETDEWEB)

Gagne, F. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada)], E-mail: francois.gagne@ec.gc.ca; Auclair, J.; Turcotte, P. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada); Fournier, M. [INRS-Institut Armand-Frappier, 245 Hymus, Pointe-Claire, Quebec, H9R 3G6 (Canada); Gagnon, C. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada); Sauve, S. [Departement de Chimie, Universite de Montreal, C.P. 6128, Succursale Centre-ville, Montreal, Quebec, H3C 3J7 (Canada); Blaise, C. [Fluvial Ecosystem Research, Environment Canada, 105 McGill Street, Montreal, Quebec, H2Y 2E7 (Canada)

2008-02-18

The purpose of this study was to examine the toxic effects of cadmium-telluride (CdTe) quantum dots on freshwater mussels. Elliption complanata mussels were exposed to increasing concentrations of CdTe (0, 1.6, 4 and 8 mg/L) and cadmium sulfate (CdSO{sub 4}, 0.5 mg/L) for 24 h at 15 {sup o}C. After the exposure period, they were removed for assessments of immunocompetence, oxidative stress (lipid peroxidation) and genotoxicity (DNA strand breaks). Preliminary experiments revealed that CdTe dissolved in aquarium water tended to aggregate in the particulate phase (85%) while 15% of CdTe was found in the dissolved phase. Immunotoxicity was characterized by a significant decrease in the number of hemocytes capable of ingesting fluorescent beads, and hemocyte viability. The cytotoxic capacity of hemocytes to lyse mammalian K-562 cells was significantly increased, but the number of circulating hemocytes remained unchanged. Lipid peroxidation was significantly increased at a threshold concentration of 5.6 mg/L in gills and significantly reduced in digestive glands at a threshold concentration <1.6 mg/L CdTe. The levels of DNA strand breaks were significantly reduced in gills at <1.6 mg/L CdTe. In digestive glands, a transient but marginal increase in DNA strand breaks occurred at the lowest concentration and dropped significantly at the higher concentrations. A multivariate analysis revealed that the various response patterns differed based on the concentration of CdTe, thus permitting the identification of biomarkers associated with the form (colloidal vs. molecular) of cadmium.

A computational study on the energy bandgap engineering in performance enhancement of CdTe thin film solar cells

Directory of Open Access Journals (Sweden)

Ameen M. Ali

Full Text Available In this study, photovoltaic properties of CdTe thin film in the configuration of n-SnO2/n-CdS/p-CdTe/p-CdTe:Te/metal have been studied by numerical simulation software named “Analysis of Microelectronic and Photonic Structure” (AMPS-1D. A modified structure for CdTe thin film solar cell has been proposed by numerical analysis with the insertion of a back contact buffer layer (CdTe:Te. This layer can serve as a barrier that will decelerate the copper diffusion in CdTe solar cell. Four estimated energy bandgap relations versus the Tellurium (Te concentrations and the (CdTe:Te layer thickness have been examined thoroughly during simulation. Correlation between energy bandgap with the CdTe thin film solar cell performance has also been established. Keywords: Numerical modelling, CdTe thin film, Solar cell, AMPS-1D, Bandgap

Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

Energy Technology Data Exchange (ETDEWEB)

Wielunski, L.S.; Kenny, M.J. [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

1993-12-31

Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

Multidirectional channeling analysis of epitaxial CdTe layers using an automatic RBS/channeling system

Energy Technology Data Exchange (ETDEWEB)

Wielunski, L S; Kenny, M J [CSIRO, Lindfield, NSW (Australia). Applied Physics Div.

1994-12-31

Rutherford Backscattering Spectrometry (RBS) is an ion beam analysis technique used in many fields. The high depth and mass resolution of RBS make this technique very useful in semiconductor material analysis [1]. The use of ion channeling in combination with RBS creates a powerful technique which can provide information about crystal quality and structure in addition to mass and depth resolution [2]. The presence of crystal defects such as interstitial atoms, dislocations or dislocation loops can be detected and profiled [3,4]. Semiconductor materials such as CdTe, HgTe and Hg+xCd{sub 1-x}Te generate considerable interest due to applications as infrared detectors in many technological areas. The present paper demonstrates how automatic RBS and multidirectional channeling analysis can be used to evaluate crystal quality and near surface defects. 6 refs., 1 fig.

Characterization of point defects in CdTe by positron annihilation spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Elsharkawy, M. R. M. [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt); Kanda, G. S.; Keeble, D. J., E-mail: d.j.keeble@dundee.ac.uk [Carnegie Laboratory of Physics, SUPA, School of Science and Engineering, University of Dundee, Dundee DD1 4HN (United Kingdom); Abdel-Hady, E. E. [Physics Department, Faculty of Science, Minia University, P.O. Box 61519, Minia (Egypt)

2016-06-13

Positron lifetime measurements on CdTe 0.15% Zn-doped by weight are presented, trapping to monovacancy defects is observed. At low temperatures, localization at shallow binding energy positron traps dominates. To aid defect identification density functional theory, calculated positron lifetimes and momentum distributions are obtained using relaxed geometry configurations of the monovacancy defects and the Te antisite. These calculations provide evidence that combined positron lifetime and coincidence Doppler spectroscopy measurements have the capability to identify neutral or negative charge states of the monovacancies, the Te antisite, A-centers, and divacancy defects in CdTe.

Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

Directory of Open Access Journals (Sweden)

Choi Hyojeong

2016-09-01

Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

Preliminary study of CdTe and CdTe:Cu thin films nanostructures deposited by using DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Marwoto, Putut; Made, D. P. Ngurah; Sugianto [Departement of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Wibowo, Edy; Astuti, Santi Yuli; Aryani, Nila Prasetya [Materials Research Group, Laboratory of Thin Film, Department of Physics, Universitas Negeri Semarang, Gunungpati, Semarang 50229 Jawa Tengah (Indonesia); Othaman, Zulkafli [Departement of Physics, Universiti Teknologi Malaysia (UTM), Skudai, Johor Bahru (Malaysia)

2013-09-03

Growth and properties of CdTe and CdTe:Cu thin films nanostrucures deposited by using dc magnetron sputtering are reported. Scanning electron microscope (SEM) was used to observe the surface morphologies of the thin films. At growth conditions of 250 °C and 14 W, CdTe films did not yet evenly deposited. However, at growth temperature and plasma power of 325 °C and 43 W, both CdTe and CdTe:Cu(2%) have deposited on the substrates. In this condition, the morphology of the films indicate that the films have a grain-like nanostructures. Grain size diameter of about 200 nm begin to appear on top of the films. Energy Dispersive X-rays spectroscopy (EDX) was used to investigate chemical elements of the Cu doped CdTe film deposited. It was found that the film deposited consist of Cd, Te and Cu elements. XRD was used to investigate the full width at half maximum (FWHM) values of the thin films deposited. The results show that CdTe:Cu(2%) thin film has better crystallographic properties than CdTe thin film. The UV-Vis spectrometer was used to investigate the optical properties of thin films deposited. The transmittance spectra showed that transmittance of CdTe:Cu(2%) film is lower than CdTe film. It was found that the bandgap energy of CdTe and CdTe:Cu(2%) thin films of about 1.48 eV.

Hydrothermal synthesis of thiol-capped CdTe nanoparticles and their optical properties.

Science.gov (United States)

Bu, Hang-Beom; Kikunaga, Hayato; Shimura, Kunio; Takahasi, Kohji; Taniguchi, Taichi; Kim, DaeGwi

2013-02-28

Water soluble nanoparticles (NPs) with a high emission property were synthesized via hydrothermal routes. In this report, we chose thiol ligand N-acetyl-L-cysteine as the ideal stabilizer and have successfully employed it to synthesize readily size-controllable CdTe NPs in a reaction of only one step. Hydrothermal synthesis of CdTe NPs has been carried out in neutral or basic conditions so far. We found out that the pH value of precursor solutions plays an important role in the uniformity of the particle size. Actually, high quality CdTe NPs were synthesized under mild acidic conditions of pH 5. The resultant NPs indicated good visible light-emitting properties and stability. Further, the experimental results showed that the reaction temperature influenced significantly the growth rate and the maximum size of the NPs. The CdTe NPs with a high photoluminescence quantum yield (the highest value: 57%) and narrower half width at half maximum (the narrowest value: 33 nm) were attained in very short time, within 40 minutes, reaching diameters of 2.3 to 4.3 nm. The PL intensity was increased with an increase in the reaction time, reflecting the suppression of nonradiative recombination processes. Furthermore, the formation of CdTe/CdS core-shell structures was discussed from the viewpoint of PL dynamics and X-ray diffraction studies.

Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

Science.gov (United States)

Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

2016-09-01

Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography

International Nuclear Information System (INIS)

Ricq, St.

1999-01-01

The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

CdTe Quantum Dots Embedded in Multidentate Biopolymer Based on Salep: Characterization and Optical Properties

Directory of Open Access Journals (Sweden)

Ghasem Rezanejade Bardajee

2013-01-01

Full Text Available This paper describes a novel method for surface modification of water soluble CdTe quantum dots (QDs by using poly(acrylic acid grafted onto salep (salep-g-PAA as a biopolymer. As-prepared CdTe-salep-g-PAA QDs were characterized by Fourier transform infrared (FT-IR spectrum, thermogravimetric (TG analysis, and transmission electron microscopy (TEM. The absorption and fluorescence emission spectra were measured to investigate the effect of salep-g-PAA biopolymer on the optical properties of CdTe QDs. The results showed that the optical properties of CdTe QDs were significantly enhanced by using salep-g-PAA-based biopolymer.

Growth and optical characterization of colloidal CdTe nanoparticles capped by a bifunctional molecule

Energy Technology Data Exchange (ETDEWEB)

Abd El-sadek, M.S., E-mail: el_sadek_99@email.co [Nanomaterial Laboratory, Physics Department, Faculty of Science, South Valley University, Qena-83523 (Egypt); Crystal Growth Centre, Anna University Chennai, Chennai-600025 (India); Moorthy Babu, S. [Crystal Growth Centre, Anna University Chennai, Chennai-600025 (India)

2010-08-15

Thiol-capped CdTe nanoparticles were synthesized in aqueous solution by wet chemical route. CdTe nanoparticles with bifunctional molecule mercaptoacetic acid as a stabilizer were synthesized at pH{approx}11.2 and using potassium tellurite as tellurium source. The effect of refluxing time on the preparation of these samples was measured using UV-vis absorption and photoluminescence analysis. By increasing the refluxing time the UV-vis absorption and photoluminescence results show that the band edge emission is redshifted. The synthesized thiol-capped CdTe were characterized with FT-IR, TEM and TG-DTA. The particle size was calculated by the effective mass approximation (EMA). The role of precursors, their composition, pH and reaction procedure on the development of nanoparticles are analyzed.

CdTe QDs-based prostate-specific antigen probe for human prostate cancer cell imaging

International Nuclear Information System (INIS)

Dong Wei; Guo Li; Wang Meng; Xu Shukun

2009-01-01

L-glutathione (GSH) stabilized CdTe quantum dots (QDs) were directly prepared in aqueous solution. The as-prepared QDs were linked to prostate-specific antigen (PSA) for the direct labeling and linked to immunoglobulin G (IgG) for the indirect labeling of fixed prostate cancer cells. The results indicated that QD-based probes were ideal fluorescent markers with excellent spectral properties and photostability and much better than organic dyes making them very suitable in target detection. Meanwhile, the indirect labeling showed much better specificity than the direct labeling. Furthermore, the prepared CdTe QDs did not show detectable effect on cell growth after having cultured for three days, which suggested that the L-glutathione capped CdTe had scarcely cytotoxicity.

Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

Science.gov (United States)

Wijewarnasuriya, Priyalal S.

2016-05-01

Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

Thermal stability of substitutional ag in CdTe

NARCIS (Netherlands)

Jahn, SG; Hofsass, H; Restle, M; Ronning, C; Quintel, H; BharuthRam, K; Wahl, U

The thermal stability of substitutional Ag in CdTe was deduced from lattice location measurements at different temperatures. Substitutional Ag probe atoms were generated via transmutation doping from radioactive Cd isotopes. The lattice sites of Ag isotopes were determined by measuring the

Growth of wurtzite CdTe nanowires on fluorine-doped tin oxide glass substrates and room-temperature bandgap parameter determination

Science.gov (United States)

Choi, Seon Bin; Song, Man Suk; Kim, Yong

2018-04-01

The growth of CdTe nanowires, catalyzed by Sn, was achieved on fluorine-doped tin oxide glass by physical vapor transport. CdTe nanowires grew along the 〈0001〉 direction, with a very rare and phase-pure wurtzite structure, at 290 °C. CdTe nanowires grew under Te-limited conditions by forming SnTe nanostructures in the catalysts and the wurtzite structure was energetically favored. By polarization-dependent and power-dependent micro-photoluminescence measurements of individual nanowires, heavy and light hole-related transitions could be differentiated, and the fundamental bandgap of wurtzite CdTe at room temperature was determined to be 1.562 eV, which was 52 meV higher than that of zinc-blende CdTe. From the analysis of doublet photoluminescence spectra, the valence band splitting energy between heavy hole and light hole bands was estimated to be 43 meV.

Pressure-induced drastic structural change in liquid CdTe

International Nuclear Information System (INIS)

Kinoshita, T.; Hattori, T.; Narushima, T.; Tsuji, K.

2005-01-01

We investigate the structure of liquid CdTe at pressures up to 6 GPa by synchrotron x-ray diffraction. The structure factor, S(Q), and the pair distribution function, g(r), change drastically within a small pressure interval of about 1 GPa (between 1.8 and 3 GPa). The S(Q),g(r), and other structural parameters, such as the average coordination number, CN, and the ratios of peak positions in S(Q) or g(r), reveal that the change originates from the pressure-induced modification in the local structure from the zinc-blende-like form into the rocksaltlike one. The liquid CdTe shows a high-pressure behavior similar to that in the crystalline counterpart in terms of the sharpness of the structural change and the high-pressure sequence in the local structure

Synthesis and transport characterization of electrochemically deposited CdTe nanowires

Science.gov (United States)

Kaur, Jaskiran; Kaur, Harmanmeet; Singh, R. C.

2018-04-01

This paper reports the synthesis and characterization of CdTe nanowires. A thin polymeric films were irradiated with 80MeV Ag ions at a fluence of 8E7 ions/cm2, followed by UV irradiation and chemically etching in aqueous NaOH. Nanosizes go-through pores so formed were filled using a specially designed cell via electrodeposition. Nanowires so formed were further studied using SEM, I-V, UV and XRD analysis. SEM images show very smooth and uniform CdTe nanowires freely standing on the substrate. The in-situ I-V characteristics of nano-/micro structures was carried out at room temperature by leaving the structures embedded in the insulating template membrane itself.

Alternative collimator for CdTe (model XR-100T), when it is used for a direct measurements of radiodiagnostic spectra

International Nuclear Information System (INIS)

Soares, C.; Guevara, M.V. Manso; Milian, F. Mas; Garcia, F.

2014-01-01

The spectrum simulation is a powerful instrument of great practical and pedagogical usefulness, because it helps to understand the technical and the instrumental limits of parameters in optimized measurements of magnitudes of interest in physics. Monte Carlo models, based on particle and radiation transport, provide easy and flexible tools for simulating complex geometries and materials. Particularly, MCNPX code is used to compare, manipulate, and quantify simulated and measured spectra. The purpose of this work is to use this tool set to estimate the characteristics of a collimation device, avoiding permanent and temporary damages into the diode-pin detector, during direct measurements of the Bremsstrahlung's spectrum, which was generated from diagnosis tubes with medical purpose. The simulations were made with a maximum voltage of 150 kVp, and typical charges used in radiological protocols in the medical area. Also, differential high pulse spectra, simulated and measured with a CdTe Detector, are reported. (author)

Electrical characterization of CdTe pixel detectors with Al Schottky anode

International Nuclear Information System (INIS)

Turturici, A.A.; Abbene, L.; Gerardi, G.; Principato, F.

2014-01-01

Pixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4×4) pixelated Schottky Al/p-CdTe/Pt detector. Current–voltage (I–V) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe contact was estimated by using the thermionic-field emission model at low reverse bias voltages. Activation energy of the deep levels was measured through the analysis of the reverse current transients at different temperatures. Finally, we employed an analytical method to determine the density and the energy distribution of the traps from SCLC current–voltage characteristics

Electro-Plating and Characterisation of CdTe Thin Films Using CdCl2 as the Cadmium Source

Directory of Open Access Journals (Sweden)

Nor A. Abdul-Manaf

2015-09-01

Full Text Available Cadmium telluride (CdTe thin films have been successfully prepared from an aqueous electrolyte bath containing cadmium chloride (CdCl2·H2O and tellurium dioxide (TeO2 using an electrodeposition technique. The structural, electrical, morphological and optical properties of these thin films have been characterised using X-ray diffraction (XRD, Raman spectroscopy, optical profilometry, DC current-voltage (I-V measurements, photoelectrochemical (PEC cell measurement, scanning electron microscopy (SEM, atomic force microscopy (AFM and UV-Vis spectrophotometry. It is observed that the best cathodic potential is 698 mV with respect to standard calomel electrode (SCE in a three electrode system. Structural analysis using XRD shows polycrystalline crystal structure in the as-deposited CdTe thin films and the peaks intensity increase after CdCl2 treatment. PEC cell measurements show the possibility of growing p-, i- and n-type CdTe layers by varying the growth potential during electrodeposition. The electrical resistivity of the as-deposited layers are in the order of 104 Ω·cm. SEM and AFM show that the CdCl2 treated samples are more roughness and have larger grain size when compared to CdTe grown by CdSO4 precursor. Results obtained from the optical absorption reveal that the bandgap of as-deposited CdTe (1.48–1.52 eV reduce to (1.45–1.49 eV after CdCl2 treatment. Full characterisation of this material is providing new information on crucial CdCl2 treatment of CdTe thin films due to its built-in CdCl2 treatment during the material growth. The work is progressing to fabricate solar cells with this material and compare with CdTe thin films grown by conventional sulphate precursors.

Novel Contact Materials for Improved Performance CdTe Solar Cells Final Report

Energy Technology Data Exchange (ETDEWEB)

Rockett, Angus [Colorado School of Mines, Golden, CO (United States); Marsillac, Sylvain [Old Dominion Univ., Norfolk, VA (United States); Collins, Robert [Univesity of Toledo

2018-04-15

This program has explored a number of novel materials for contacts to CdTe solar cells in order to reduce the back contact Schottky barrier to zero and produce an ohmic contact. The project tested a wide range of potential contact materials including TiN, ZrN, CuInSe2:N, a-Si:H and alloys with C, and FeS2. Improved contacts were achieved with FeS2. As part of understanding the operation of the devices and controlling the deposition processes, a number of other important results were obtained. In the process of this project and following its conclusion it led to research that resulted in seven journal articles, nine conference publications, 13 talks presented at conferences, and training of eight graduate students. The seven journal articles were published in 2015, 2016, and 2017 and have been cited, as of March 2018, 52 times (one cited 19 times and two cited 11 times). We demonstrated high levels of doping of CIS with N but electrical activity of the resulting N was not high and the results were difficult to reproduce. Furthermore, even with high doping the contacts were not good. Annealing did not improve the contacts. A-Si:H was found to produce acceptable but unstable contacts, degrading even over a day or two, apparently due to H incorporation into the CdTe. Alloying with C did not improve the contacts or stability. The transition metal nitrides produced Schottky type contacts for all materials tested. While these contacts were found to be unsatisfactory, we investigated FeS2 and found this material to be effective and comparable to the best contacts currently available. The contacts were found to be chemically stable under heat treatment and preferable to Cu doped contacts. Thus, we demonstrated an improved contact material in the course of this project. In addition, we developed new ways of controlling the deposition of CdTe and other materials, demonstrated the nature of defects in CdTe, and studied the distribution of conductivity and carrier type in CdTe

Demonstration of iodine K-edge imaging by use of an energy-discrimination X-ray computed tomography system with a cadmium telluride detector.

Science.gov (United States)

Abudurexiti, Abulajiang; Kameda, Masashi; Sato, Eiichi; Abderyim, Purkhet; Enomoto, Toshiyuki; Watanabe, Manabu; Hitomi, Keitaro; Tanaka, Etsuro; Mori, Hidezo; Kawai, Toshiaki; Takahashi, Kiyomi; Sato, Shigehiro; Ogawa, Akira; Onagawa, Jun

2010-07-01

An energy-discrimination K-edge X-ray computed tomography (CT) system is useful for increasing the contrast resolution of a target region by utilizing contrast media. The CT system has a cadmium telluride (CdTe) detector, and a projection curve is obtained by linear scanning with use of the CdTe detector in conjunction with an X-stage. An object is rotated by a rotation step angle with use of a turntable between the linear scans. Thus, CT is carried out by repetition of the linear scanning and the rotation of an object. Penetrating X-ray photons from the object are detected by the CdTe detector, and event signals of X-ray photons are produced with use of charge-sensitive and shaping amplifiers. Both the photon energy and the energy width are selected by use of a multi-channel analyzer, and the number of photons is counted by a counter card. For performing energy discrimination, a low-dose-rate X-ray generator for photon counting was developed; the maximum tube voltage and the minimum tube current were 110 kV and 1.0 microA, respectively. In energy-discrimination CT, the tube voltage and the current were 60 kV and 20.0 microA, respectively, and the X-ray intensity was 0.735 microGy/s at 1.0 m from the source and with a tube voltage of 60 kV. Demonstration of enhanced iodine K-edge X-ray CT was carried out by selection of photons with energies just beyond the iodine K-edge energy of 33.2 keV.

Induced Recrystallization of CdTe Thin Films Deposited by Close-Spaced Sublimation

International Nuclear Information System (INIS)

Mayo, B.

1998-01-01

We have deposited CdTe thin films by close-spaced sublimation at two different temperature ranges. The films deposited at the lower temperature partially recrystallized after CdCl2 treatment at 350C and completely recrystallized after the same treatment at 400C. The films deposited at higher temperature did not recrystallize at these two temperatures. These results confirmed that the mechanisms responsible for changes in physical properties of CdTe films treated with CdCl2 are recrystallization and grain growth, and provided an alternative method to deposit CSS films using lower temperatures

The large-area CdTe thin film for CdS/CdTe solar cell prepared by physical vapor deposition in medium pressure

Energy Technology Data Exchange (ETDEWEB)

Luo, Run; Liu, Bo; Yang, Xiaoyan; Bao, Zheng; Li, Bing, E-mail: libing70@126.com; Zhang, Jingquan; Li, Wei; Wu, Lili; Feng, Lianghuan

2016-01-01

Graphical abstract: - Highlights: • The large-area CdTe film has been prepared by PVD under the pressure of 0.9 kPa. • The as-prepared CdTe thin film processes excellent photovoltaic properties. • This technique is suitable for depositing large-area CdTe thin film. • The 14.6% champion efficiency CdS/CdTe cell has been achieved. - Abstract: The Cadmium telluride (CdTe) thin film has been prepared by physical vapor deposition (PVD), the Ar + O{sub 2} pressure is about 0.9 kPa. This method is a newer technique to deposit CdTe thin film in large area, and the size of the film is 30 × 40 cm{sup 2}. This method is much different from the close-spaced sublimation (CSS), as the relevance between the source temperature and the substrate temperature is weak, and the gas phase of CdTe is transferred to the substrate by Ar + O{sub 2} flow. Through this method, the compact and uniform CdTe film (30 × 40 cm{sup 2}) has been achieved, and the performances of the CdTe thin film have been determined by transmission spectrum, SEM and XRD. The film is observed to be compact with a good crystallinity, the CdTe is polycrystalline with a cubic structure and a strongly preferred (1 1 1) orientation. Using the CdTe thin film (3 × 5 cm{sup 2}) which is taken from the deposited large-area film, the 14.6% efficiency CdS/CdTe thin film solar cell has been prepared successfully. The structure of the cell is glass/FTO/CdS/CdTe/graphite slurry/Au, short circuit current density (J{sub sc}) of the cell is 26.9 mA/cm{sup 2}, open circuit voltage (V{sub oc}) is 823 mV, and filling factor (FF) is 66.05%. This technique can be a quite promising method to apply in the industrial production, as it has great prospects in the fabricating of large-area CdTe film.

The study of response of wide band gap semiconductor detectors using the Geant4

Directory of Open Access Journals (Sweden)

Hussain Riaz

2014-01-01

Full Text Available The energy dependence on the intrinsic efficiency, absolute efficiency, full energy peak absolute efficiency and peak-to-total ratio have been studied for various wide band gap semiconductor detectors using the Geant4 based Monte Carlo simulations. The detector thickness of 1-4 mm and the area in 16-100 mm2 range were considered in this work. In excellent agreement with earlier work (Rybka et al., [20], the Geant4 simulated values of detector efficiencies have been found to decrease with incident g-ray energy. Both for the detector thickness and the detector area, the increasing trends have been observed for total efficiency as well as for full-energy peak efficiency in 0.1 MeV-50 MeV range. For Cd1-xZnxTe, the detector response remained insensitive to changes in relative proportions of Zn. For various wide band gap detectors studied in this work, the detection efficiency of TlBr was found highest over the entire range of energy, followed by the HgI2, CdTe, and then by CZT.

The effects of anode material type on the optoelectronic properties of electroplated CdTe thin films and the implications for photovoltaic application

Science.gov (United States)

Echendu, O. K.; Dejene, B. F.; Dharmadasa, I. M.

2018-03-01

The effects of the type of anode material on the properties of electrodeposited CdTe thin films for photovoltaic application have been studied. Cathodic electrodeposition of two sets of CdTe thin films on glass/fluorine-doped tin oxide (FTO) was carried out in two-electrode configuration using graphite and platinum anodes. Optical absorption spectra of films grown with graphite anode displayed significant spread across the deposition potentials compared to those grown with platinum anode. Photoelectrochemical cell result shows that the CdTe grown with graphite anode became p-type after post-deposition annealing with prior CdCl2 treatment, as a result of carbon incorporation into the films, while those grown with platinum anode remained n-type after annealing. A review of recent photoluminescence characterization of some of these CdTe films reveals the persistence of a defect level at (0.97-0.99) eV below the conduction band in the bandgap of CdTe grown with graphite anode after annealing while films grown with platinum anode showed the absence of this defect level. This confirms the impact of carbon incorporation into CdTe. Solar cell made with CdTe grown with platinum anode produced better conversion efficiency compared to that made with CdTe grown using graphite anode, underlining the impact of anode type in electrodeposition.

X-ray diffraction study of epitaxial heterostructures of II-VI CdTe and ZnTe semiconductors; Etude par diffraction de rayons X d`heterostructures epitaxiees a base des semi-conducteurs II-VI CdTe et ZnTe

Energy Technology Data Exchange (ETDEWEB)

Bouchet-Boudet, N.

1996-10-07

This work deals with the structural study of II-VI semiconductor (CdTe and ZnTe) heterostructures by X-ray diffraction and reflectivity. These heterostructures have a high lattice parameter misfit and are grown by Molecular Beam Epitaxy. Two main subjects are developed: the characterization of ZnTe wires, grown by step propagation on a CdTe (001) vicinal surface, and the study of the vertical correlations in Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattices and superlattices made of ZnTe fractional layers spaced by CdTe. The growth of organised system is up to date; its aim is to realize quantum boxes (or wires) superlattices which are laterally and vertically ordered. The deformation along the growth axis induced by a ZnTe fractional layer inserted in a CdTe matrix is modelled, in the kinematical approximation, to reproduce the reflectivity measured around the substrate (004) Bragg peak. The lateral periodicity of the wires, deposited on a vicinal surface is a new and difficult subject. Some results are obtained on a vertical superlattice grown on a 1 deg. mis-cut surface. The in-plane and out-of-plane correlation lengths of a Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattice are deduced from the diffused scattered intensity measured at grazing incidence. The calculations are made within the `distorted Wave Born Approximation`. The vertical correlation in ZnTe boxes (or wines) superlattices can be measured around Bragg peaks. It is twice bigger in a superlattice grown on a 2 deg. mis-cut substrate than a nominal one. (author). 74 refs.

Mechanism of charge transport in ligand-capped crystalline CdTe nanoparticles according to surface photovoltaic and photoacoustic results

Energy Technology Data Exchange (ETDEWEB)

Li Kuiying, E-mail: kuiyingli@ysu.edu.cn [National Laboratory of Metastable Materials Manufacture Technology and Science, Yanshan University, Hebei Str. 438, Qinhuangdao, Hebei Province 066004 (China); Zhang Hao [Key Laboratory for Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012 (China); Yang Weiyong; Wei Sailing [National Laboratory of Metastable Materials Manufacture Technology and Science, Yanshan University, Hebei Str. 438, Qinhuangdao, Hebei Province 066004 (China); Wang Dayang, E-mail: dayang@mpikg-golm.mpg.de [Max Planck Institute of Colloids and Interfaces, Potsdam 14424 (Germany)

2010-09-01

By combining surface photovoltaic and photoacoustic techniques, we probed the photogenerated charge transport channels of 3-mercaptopropionic acid (MPA)- and 2-mercaptoethylamine (MA)-capped crystalline CdTe nanoparticles on illumination with UV-near IR light. The results experimentally confirmed the presence of a CdS shell outside the CdTe core that formed through the self-assembly and decomposition of mercapto ligands during CdTe preparation. The data revealed that the CdS layer was partly responsible for the deexcitation behavior of the photogenerated carriers, which is related to the quantum tunnel effect. Experiments demonstrated that two quantum wells were located at wavelengths of 440 and 500 nm in buried interfacial space-charge regions, whereas the formation of a ligand layer obstructed charge transfer transitions of the core CdTe nanoparticles to a certain extent.

Atmospheric Pressure Chemical Vapor Deposition of CdTe for High-Efficiency Thin-Film PV Devices; Annual Report, 26 January 1998-25 January 1999

Energy Technology Data Exchange (ETDEWEB)

Meyers, P. V. [ITN Energy Systems, Wheat Ridge, Colorado (US); Kee, R.; Wolden, C.; Raja, L.; Kaydanov, V.; Ohno, T.; Collins, R.; Aire, M.; Kestner, J. [Colorado School of Mines, Golden, Colorado (US); Fahrenbruch, A. [ALF, Inc., Stanford, California (US)

1999-09-30

ITN's 3-year project, titled ''Atmospheric Pressure Chemical Vapor Deposition (APCVD) of CdTe for High-Efficiency Thin-Film Photovoltaic (PV) Devices,'' has the overall objectives of improving thin-film CdTe PV manufacturing technology and increasing CdTe PV device power conversion efficiency. CdTe deposition by APCVD employs the same reaction chemistry as has been used to deposit 16%-efficient CdTe PV films, i.e., close-spaced sublimation, but employs forced convection rather than diffusion as a mechanism of mass transport. Tasks of the APCVD program center on demonstrating APCVD of CdTe films, discovering fundamental mass-transport parameters, applying established engineering principles to the deposition of CdTe films, and verifying reactor design principles that could be used to design high-throughput, high-yield manufacturing equipment. Additional tasks relate to improved device measurement and characterization procedures that can lead to a more fundamental understanding of CdTe PV device operation, and ultimately, to higher device conversion efficiency and greater stability. Specifically, under the APCVD program, device analysis goes beyond conventional one-dimensional device characterization and analysis toward two-dimension measurements and modeling. Accomplishments of the first year of the APCVD subcontract include: selection of the Stagnant Flow Reactor design concept for the APCVD reactor, development of a detailed reactor design, performance of detailed numerical calculations simulating reactor performance, fabrication and installation of an APCVD reactor, performance of dry runs to verify reactor performance, performance of one-dimensional modeling of CdTe PV device performance, and development of a detailed plan for quantification of grain-boundary effects in polycrystalline CdTe devices.

Improvement of analysis precision upon the atomic number and electron density measurement by the dual x-ray CT

Science.gov (United States)

Imura, Yukino; Morii, Hisashi; Koike, Akifumi; Okunoyama, Takaharu; Neo, Yoichiro; Mimura, Hidenori; Aoki, Toru

2010-08-01

To identify the factor impairing the material identification parameters, which is provided by the dual-energy X-ray computed tomography method using a conventional X-ray tube and a CdTe detector, linear attenuation coefficient was measured by the radioactivity of radio isotopes and compared with theoretical figure. In our study, the atomic number and the electron density is calculated from the linear attenuation coefficient obtained in CT measurement by 64-channel CdTe line detector. To estimate accuracy of CdTe line sensor, it is needed to obtain the linear attenuation coefficient accurately. Using a single detector, the linear attenuation coefficient is verified for accuracy. The energy resolution of CdTe detectors and the method of reconstruction are discussed.

Development of (Cd,Zn)Te X-ray and gamma ray radiation detectors for medical and security applications

International Nuclear Information System (INIS)

Franc, J.; Hoeschl, P.; Belas, E.; Grill, V.; Fauler, A.; Dambacher, M.; Procz, S.

2011-01-01

Full text: There is a growing need for large area X-and Gamma radiation detectors for penetrating radiations in various fields of application e.g. astronomy, detectors for nuclear medicine, biosensor materials, security, non-proliferation of hazardous materials, and environmental applications etc. Direct X-rays conversion into electric charges in a semiconductor is envisaged with better spectroscopic characteristics to improve contrast and quantitative measurements compared to indirect detection using scintillators. The family of II-VI semiconductor materials combine a range of excellent properties such as their high sensitivity due to the high mobility-lifetime products, their high energy resolution as a consequence of the electron-hole pair formation energy, their reasonable maturity in terms of microelectronic technologies required for commercial detector fabrication, wide range of stopping power and band-gaps available. In particular, CdTe and Cd x Zn 1-x Te (CZT) with Zn=0.1 offer a favorable combination of physical and chemical properties that makes it attractive as a room temperature X-ray detector material of choice for many applications involving photon energies up to several hundreds of keV. From the scientific experience accumulated in the past years, the detector properties are strongly dependent on a series of parameters which must be strictly controlled during crystal growth, such as the homogeneity, stoichiometry and the related intrinsic defects which appear during the material growth, a high mobility-lifetime for electron and holes is mandatory etc. Production of detector-grade CdTe and CdZnTe on industrial scale is still a challenge and optimal growth methods and growth conditions have been under intensive investigation. Progress in crystal growth and characterization achieved in a project of Institute partnership between Charles University in Prague and University of Freiburg, Germany which was sponsored by Alexander von Humboldt Foundation, will

A computational ab initio study of surface diffusion of sulfur on the CdTe (111) surface

Energy Technology Data Exchange (ETDEWEB)

Naderi, Ebadollah, E-mail: enaderi42@gmail.com [Department of Physics, Savitribai Phule Pune University (SPPU), Pune-411007 (India); Ghaisas, S. V. [Department of Electronic Science, Savitribai Phule Pune University (SPPU), Pune-411007 (India)

2016-08-15

In order to discern the formation of epitaxial growth of CdS shell over CdTe nanocrystals, kinetics related to the initial stages of the growth of CdS on CdTe is investigated using ab-initio methods. We report diffusion of sulfur adatom on the CdTe (111) A-type (Cd-terminated) and B-type (Te-terminated) surfaces within the density functional theory (DFT). The barriers are computed by applying the climbing Nudge Elastic Band (c-NEB) method. From the results surface hopping emerges as the major mode of diffusion. In addition, there is a distinct contribution from kick-out type diffusion in which a CdTe surface atom is kicked out from its position and is replaced by the diffusing sulfur atom. Also, surface vacancy substitution contributes to the concomitant dynamics. There are sites on the B- type surface that are competitively close in terms of the binding energy to the lowest energy site of epitaxy on the surface. The kick-out process is more likely for B-type surface where a Te atom of the surface is displaced by a sulfur adatom. Further, on the B-type surface, subsurface migration of sulfur is indicated. Furthermore, the binding energies of S on CdTe reveal that on the A-type surface, epitaxial sites provide relatively higher binding energies and barriers than on B-type.

A computational ab initio study of surface diffusion of sulfur on the CdTe (111) surface

Science.gov (United States)

Naderi, Ebadollah; Ghaisas, S. V.

2016-08-01

In order to discern the formation of epitaxial growth of CdS shell over CdTe nanocrystals, kinetics related to the initial stages of the growth of CdS on CdTe is investigated using ab-initio methods. We report diffusion of sulfur adatom on the CdTe (111) A-type (Cd-terminated) and B-type (Te-terminated) surfaces within the density functional theory (DFT). The barriers are computed by applying the climbing Nudge Elastic Band (c-NEB) method. From the results surface hopping emerges as the major mode of diffusion. In addition, there is a distinct contribution from kick-out type diffusion in which a CdTe surface atom is kicked out from its position and is replaced by the diffusing sulfur atom. Also, surface vacancy substitution contributes to the concomitant dynamics. There are sites on the B- type surface that are competitively close in terms of the binding energy to the lowest energy site of epitaxy on the surface. The kick-out process is more likely for B-type surface where a Te atom of the surface is displaced by a sulfur adatom. Further, on the B-type surface, subsurface migration of sulfur is indicated. Furthermore, the binding energies of S on CdTe reveal that on the A-type surface, epitaxial sites provide relatively higher binding energies and barriers than on B-type.

A computational ab initio study of surface diffusion of sulfur on the CdTe (111) surface

International Nuclear Information System (INIS)

Naderi, Ebadollah; Ghaisas, S. V.

2016-01-01

In order to discern the formation of epitaxial growth of CdS shell over CdTe nanocrystals, kinetics related to the initial stages of the growth of CdS on CdTe is investigated using ab-initio methods. We report diffusion of sulfur adatom on the CdTe (111) A-type (Cd-terminated) and B-type (Te-terminated) surfaces within the density functional theory (DFT). The barriers are computed by applying the climbing Nudge Elastic Band (c-NEB) method. From the results surface hopping emerges as the major mode of diffusion. In addition, there is a distinct contribution from kick-out type diffusion in which a CdTe surface atom is kicked out from its position and is replaced by the diffusing sulfur atom. Also, surface vacancy substitution contributes to the concomitant dynamics. There are sites on the B- type surface that are competitively close in terms of the binding energy to the lowest energy site of epitaxy on the surface. The kick-out process is more likely for B-type surface where a Te atom of the surface is displaced by a sulfur adatom. Further, on the B-type surface, subsurface migration of sulfur is indicated. Furthermore, the binding energies of S on CdTe reveal that on the A-type surface, epitaxial sites provide relatively higher binding energies and barriers than on B-type.

Understanding arsenic incorporation in CdTe with atom probe tomography

Energy Technology Data Exchange (ETDEWEB)

Burton, G. L.; Diercks, D. R.; Ogedengbe, O. S.; Jayathilaka, P. A. R. D.; Edirisooriya, M.; Myers, T. H.; Zaunbrecher, K. N.; Moseley, J.; Barnes, T. M.; Gorman, B. P.

2018-08-01

Overcoming the open circuit voltage deficiency in Cadmium Telluride (CdTe) photovoltaics may be achieved by increasing p-type doping while maintaining or increasing minority carrier lifetimes. Here, routes to higher doping efficiency using arsenic are explored through an atomic scale understanding of dopant incorporation limits and activation in molecular beam epitaxy grown CdTe layers. Atom probe tomography reveals spatial segregation into nanometer scale clusters containing > 60 at% As for samples with arsenic incorporation levels greater than 7-8 x 10^17 cm-3. The presence of arsenic clusters was accompanied by crystal quality degradation, particularly the introduction of arsenic-enriched extended defects. Post-growth annealing treatments are shown to increase the size of the As precipitates and the amount of As within the precipitates.

Compton profiles and band structure calculations of CdS and CdTe

International Nuclear Information System (INIS)

Heda, N.L.; Mathur, S.; Ahuja, B.L.; Sharma, B.K.

2007-01-01

In this paper we present the isotropic Compton profiles of zinc-blende CdS and CdTe measured at an intermediate resolution of 0.39 a.u. using our 20 Ci 137 Cs Compton spectrometer. The electronic band structure calculations for both the zinc-blende structure compounds and also wurtzite CdS have been undertaken using various schemes of ab-initio linear combination of atomic orbitals calculations implemented in CRYSTAL03 code. The band structure and Mulliken's populations are reported using density functional scheme. In case of wurtzite CdS, our theoretical anisotropies in directional Compton profiles are compared with available experimental data. In case of both the zinc-blende compounds, the isotropic experimental profiles are found to be in better agreement with the present Hartree-Fock calculations. A study of the equal-valence-electron-density experimental profiles of zinc-blende CdS and CdTe shows that the CdS is more ionic than CdTe. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Vapor transport deposition of large-area polycrystalline CdTe for radiation image sensor application

Energy Technology Data Exchange (ETDEWEB)

Yang, Keedong; Cha, Bokyung; Heo, Duchang; Jeon, Sungchae [Korea Electrotechnology Research Institute, 111 Hanggaul-ro, Ansan-si, Gyeonggi-do 426-170 (Korea, Republic of)

2014-07-15

Vapor transport deposition (VTD) process delivers saturated vapor to substrate, resulting in high-throughput and scalable process. In addition, VTD can maintain lower substrate temperature than close-spaced sublimation (CSS). The motivation of this work is to adopt several advantages of VTD for radiation image sensor application. Polycrystalline CdTe films were obtained on 300 mm x 300 mm indium tin oxide (ITO) coated glass. The polycrystalline CdTe film has columnar structure with average grain size of 3 μm ∝ 9 μm, which can be controlled by changing the substrate temperature. In order to analyze electrical and X-ray characteristics, ITO-CdTe-Al sandwich structured device was fabricated. Effective resistivity of the polycrystalline CdTe film was ∝1.4 x 10{sup 9}Ωcm. The device was operated under hole-collection mode. The responsivity and the μτ product estimated to be 6.8 μC/cm{sup 2}R and 5.5 x 10{sup -7} cm{sup 2}/V. The VTD can be a process of choice for monolithic integration of CdTe thick film for radiation image sensor and CMOS/TFT circuitry. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Fluorescence-tagged metallothionein with CdTe quantum dots analyzed by the chip-CE technique

Energy Technology Data Exchange (ETDEWEB)

Guszpit, Ewelina, E-mail: ewelina.guszpit@gmail.com [Wroclaw Medical University, Department of Biomedical and Environmental Analysis, Faculty of Pharmacy (Poland); Krizkova, Sona [Mendel University in Brno, Department of Chemistry and Biochemistry, Faculty of Agronomy (Czech Republic); Kepinska, Marta [Wroclaw Medical University, Department of Biomedical and Environmental Analysis, Faculty of Pharmacy (Poland); Rodrigo, Miguel Angel Merlos [Mendel University in Brno, Department of Chemistry and Biochemistry, Faculty of Agronomy (Czech Republic); Milnerowicz, Halina [Wroclaw Medical University, Department of Biomedical and Environmental Analysis, Faculty of Pharmacy (Poland); Kopel, Pavel; Kizek, Rene [Mendel University in Brno, Department of Chemistry and Biochemistry, Faculty of Agronomy (Czech Republic)

2015-11-15

Quantum dots (QDs) are fluorescence nanoparticles (NPs) with unique optic properties which allow their use as probes in chemical, biological, immunological, and molecular imaging. QDs linked with target ligands such as peptides or small molecules can be used as tumor biomarkers. These particles are a promising tool for selective, fast, and sensitive tagging and imaging in medicine. In this study, an attempt was made to use QDs as a marker for human metallothionein (MT) isoforms 1 and 2. Four kinds of CdTe QDs of different sizes bioconjugated with MT were analyzed using the chip-CE technique. Based on the results, it can be concluded that MT is willing to interact with QDs, and the chip-CE technique enables the observation of their complexes. It was also observed that changes ranging roughly 6–7 kDa, a value corresponding to the MT monomer, depend on the hydrodynamic diameters of QDs; also, the MT sample without cadmium interacted stronger with QDs than MT saturated with cadmium. Results show that MT is willing to interact with smaller QDs (blue CdTe) rather than larger ones QDs (red CdTe). To our knowledge, chip-CE has not previously been applied in the study of CdTe QDs interaction with MT.Graphical Abstract.

Fluorescence-tagged metallothionein with CdTe quantum dots analyzed by the chip-CE technique

International Nuclear Information System (INIS)

Guszpit, Ewelina; Krizkova, Sona; Kepinska, Marta; Rodrigo, Miguel Angel Merlos; Milnerowicz, Halina; Kopel, Pavel; Kizek, Rene

2015-01-01

Quantum dots (QDs) are fluorescence nanoparticles (NPs) with unique optic properties which allow their use as probes in chemical, biological, immunological, and molecular imaging. QDs linked with target ligands such as peptides or small molecules can be used as tumor biomarkers. These particles are a promising tool for selective, fast, and sensitive tagging and imaging in medicine. In this study, an attempt was made to use QDs as a marker for human metallothionein (MT) isoforms 1 and 2. Four kinds of CdTe QDs of different sizes bioconjugated with MT were analyzed using the chip-CE technique. Based on the results, it can be concluded that MT is willing to interact with QDs, and the chip-CE technique enables the observation of their complexes. It was also observed that changes ranging roughly 6–7 kDa, a value corresponding to the MT monomer, depend on the hydrodynamic diameters of QDs; also, the MT sample without cadmium interacted stronger with QDs than MT saturated with cadmium. Results show that MT is willing to interact with smaller QDs (blue CdTe) rather than larger ones QDs (red CdTe). To our knowledge, chip-CE has not previously been applied in the study of CdTe QDs interaction with MT.Graphical Abstract

CdTe quantum dots with daunorubicin induce apoptosis of multidrug-resistant human hepatoma HepG2/ADM cells: in vitro and in vivo evaluation

Directory of Open Access Journals (Sweden)

Shi Lixin

2011-01-01

Full Text Available Abstract Cadmium telluride quantum dots (Cdte QDs have received significant attention in biomedical research because of their potential in disease diagnosis and drug delivery. In this study, we have investigated the interaction mechanism and synergistic effect of 3-mercaptopropionic acid-capped Cdte QDs with the anti-cancer drug daunorubicin (DNR on the induction of apoptosis using drug-resistant human hepatoma HepG2/ADM cells. Electrochemical assay revealed that Cdte QDs readily facilitated the uptake of the DNR into HepG2/ADM cells. Apoptotic staining, DNA fragmentation, and flow cytometry analysis further demonstrated that compared with Cdte QDs or DNR treatment alone, the apoptosis rate increased after the treatment of Cdte QDs together with DNR in HepG2/ADM cells. We observed that Cdte QDs treatment could reduce the effect of P-glycoprotein while the treatment of Cdte QDs together with DNR can clearly activate apoptosis-related caspases protein expression in HepG2/ADM cells. Moreover, our in vivo study indicated that the treatment of Cdte QDs together with DNR effectively inhibited the human hepatoma HepG2/ADM nude mice tumor growth. The increased cell apoptosis rate was closely correlated with the enhanced inhibition of tumor growth in the studied animals. Thus, Cdte QDs combined with DNR may serve as a possible alternative for targeted therapeutic approaches for some cancer treatments.

Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Gross, Dieter Konrad Michael

2013-11-08

Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

Detection of malachite green in fish based on magnetic fluorescent probe of CdTe QDs/nano-Fe3O4@MIPs

Science.gov (United States)

Wu, Le; Lin, Zheng-Zhong; Zeng, Jun; Zhong, Hui-Ping; Chen, Xiao-Mei; Huang, Zhi-Yong

2018-05-01

A magnetic fluorescent probe of CdTe QDs/nano-Fe3O4@MIPs was prepared using CdTe QDs and Fe3O4 nanoparticles as co-nucleus and molecularly imprinted polymers (MIPs) as specific recognition sites based on a reverse microemulsion method. With the specific enrichment and magnetic separation properties, the probe of CdTe QDs/nano-Fe3O4@MIPs was used to detect malachite green (MG) in fish samples. The TEM analysis showed that the particles of CdTe QDs/nano-Fe3O4@MIPs were spherical with average diameter around 53 nm, and a core-shell structure was well-shaped with several Fe3O4 nanoparticles and CdTe QDs embedded in each of the microsphere. Quick separation of the probes from solutions could be realized with a magnet, indicating the excellent magnetic property of CdTe QDs/nano-Fe3O4@MIPs. The probe exhibited high specific adsorption towards MG and excellent fluorescence emission at λem 598 nm. The fluorescence of CdTe QDs/nano-Fe3O4@MIPs could be linearly quenched by MG at the concentrations from 0.025 to 1.5 μmol L-1. The detection limit was 0.014 μmol L-1. The average recovery of spiked MG in fish samples was 105.2%. The result demonstrated that the as-prepared CdTe QDs/nano-Fe3O4@MIPs could be used as a probe to the detection of trace MG in fish samples.

Excimer laser doping technique for application in an integrated CdTe imaging device

CERN Document Server

Mochizuki, D; Aoki, T; Tomita, Y; Nihashi, T; Hatanaka, Y

1999-01-01

CdTe is an attractive semiconductor material for applications in solid-state high-energy X-ray and gamma-ray imaging systems because of its high absorption coefficient, large band gap, good mobility lifetime product of holes and stability at normal atmospheric conditions. We propose a new concept for fabricating an integrated CdTe with monolithic circuit configuration for two-dimensional imaging systems suitable for medical, research or industrial applications and operation at room temperature. A new doping technique has been recently developed that employs excimer laser radiation to diffuse impurity atoms into the semiconductor. Accordingly, heavily doped n- and p-type layers with resistivities less than 1 OMEGA cm can be formed on the high resistive CdTe crystals. We have further extended this technique for doping with spatial pattern. We will present the laser doping technique and various results thus obtained. Spatially patterned doping is demonstrated and we propose the use of these doping techniques for...

Preparation and characterization of pulsed laser deposited CdTe thin films at higher FTO substrate temperature and in Ar + O{sub 2} atmosphere

Energy Technology Data Exchange (ETDEWEB)

Ding, Chao; Ming, Zhenxun [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Li, Bing, E-mail: libing70@126.com [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Feng, Lianghuan [College of Materials Science and Engineering, Sichuan University, Chengdu 610064, Sichuan (China); Wu, Judy [Department of Physics and Astronomy, Kansas University, Lawrence 66045 (United States)

2013-06-20

Highlights: • CdTe films were deposited by PLD at high substrate temperatures (400 °C, 550 °C). • CdTe films were achieved under the atmosphere (1.2 Torr) of Ar mixed with O{sub 2}. • Deposited CdTe films were cubic phase and had strong (1 0 0) preferred orientation. • Scanning electron microscope (SEM) showed an average grain size of 0.3–0.6 μm. • The ultra-thin film (CdS/PLD-CdTe) solar cell with efficiency of 6.68% was made. -- Abstract: Pulsed laser deposition (PLD) is one of the promising techniques for depositing cadmium telluride (CdTe) thin films. It has been reported that PLD CdTe thin films were almost deposited at the lower substrate temperatures (<300 °C) under vacuum conditions. However, the poor crystallinity of CdTe films prepared in this way renders them not conducive to the preparation of high-efficiency CdTe solar cells. To obtain high-efficiency solar cell devices, better crystallinity and more suitable grain size are needed, which requires the CdTe layer to be deposited by PLD at high substrate temperatures (>400 °C). In this paper, CdTe layers were deposited by PLD (KrF, λ = 248 nm, 10 Hz) at different higher substrate temperatures (T{sub s}). Excellent performance of CdTe films was achieved at higher substrate temperatures (400 °C, 550 °C) under an atmosphere of Ar mixed with O{sub 2} (1.2 Torr). X-ray diffraction analysis confirmed the formation of CdTe cubic phase with a strong (1 0 0) preferential orientation at all substrates temperatures on 60 mJ laser energy. The optical properties of CdTe were investigated, and the band gaps of CdTe films were 1.51 eV and 1.49 eV at substrate temperatures of 400 °C and 550 °C, respectively. Scanning electron microscopy (SEM) showed an average grain size of 0.3–0.6 μm. Thus, under these conditions of the atmosphere of Ar + O{sub 2} (15 Torr) and at the relatively high T{sub s} (500 °C), an thin-film (FTO/PLD-CdS (100 nm)/PLD-CdTe (∼1.5 μm)/HgTe: Cu/Ag) solar cell with an

Matrix-Assisted Laser Desorption Ionization Mass Spectrometry of Compounds Containing Carboxyl Groups Using CdTe and CuO Nanoparticles

OpenAIRE

Megumi Sakurai; Taro Sato; Jiawei Xu; Soichi Sato; Tatsuya Fujino

2018-01-01

Matrix-assisted laser desorption ionization mass spectrometry of compounds containing carboxyl groups was carried out by using semiconductor nanoparticles (CdTe and CuO) as the matrix. Salicylic acid (Sal), glucuronic acid (Glu), ibuprofen (Ibu), and tyrosine (Tyr) were ionized as deprotonated species (carboxylate anions) by using electrons ejected from CdTe after the photoexcitation. When CuO was used as the matrix, the peak intensity of Tyr became high compared with that obtained with CdTe....

Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

Energy Technology Data Exchange (ETDEWEB)

Ananthakumar, S. [Crystal Growth Centre, Anna University, Chennai 600025 (India); Jayabalan, J., E-mail: jjaya@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Singh, Asha; Khan, Salahuddin [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Babu, S. Moorthy [Crystal Growth Centre, Anna University, Chennai 600025 (India); Chari, Rama [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2016-01-15

The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a 'UCPL bright point' in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

International Nuclear Information System (INIS)

Ananthakumar, S.; Jayabalan, J.; Singh, Asha; Khan, Salahuddin; Babu, S. Moorthy; Chari, Rama

2016-01-01

The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a "UCPL bright point" in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

Identification of a type of defects in CdTe crystals by the piezo spectroscopic method

International Nuclear Information System (INIS)

Tarbajev, M.Yi.

1999-01-01

The dependence of line shifts and the photoluminescence line intensity of bound exciton complexes on the direction of elastic deformation are studied for CdTe crystals at 4.2 K. On the basis of the found differences in piezo optic behavior of excitons bound to neutral donors and acceptors, the method of identification of a type of defects in CdTe crystals is proposed

Spectral response characterization of CdTe sensors of different pixel size with the IBEX ASIC

Science.gov (United States)

Zambon, P.; Radicci, V.; Trueb, P.; Disch, C.; Rissi, M.; Sakhelashvili, T.; Schneebeli, M.; Broennimann, C.

2018-06-01

We characterized the spectral response of CdTe sensors with different pixel sizes - namely 75, 150 and 300 μm - bonded to the latest generation IBEX single photon counting ASIC developed at DECTRIS, to detect monochromatic X-ray energy in the range 10-60 keV. We present a comparison of pulse height spectra recorded for several energies, showing the dependence on the pixel size of the non-trivial atomic fluorescence and charge sharing effects that affect the detector response. The extracted energy resolution, in terms of full width at half maximum or FWHM, ranges from 1.5 to 4 keV according to the pixel size and chip configuration. We devoted a careful analysis to the Quantum Efficiency and to the Spectral Efficiency - a newly-introduced measure that quantifies the impact of fluorescence and escape phenomena on the spectrum integrity in high- Z material based detectors. We then investigated the influence of the photon flux on the aforementioned quantities up to 180 ṡ 106 cts/s/mm2 and 50 ṡ 106 cts/s/mm2 for the 150 μm and 300 μm pixel case, respectively. Finally, we complemented the experimental data with analytical and with Monte Carlo simulations - taking into account the stochastic nature of atomic fluorescence - with an excellent agreement.

Effect of capping agent on selectivity and sensitivity of CdTe quantum dots optical sensor for detection of mercury ions

Science.gov (United States)

Labeb, Mohmed; Sakr, Abdel-Hamed; Soliman, Moataz; Abdel-Fettah, Tarek M.; Ebrahim, Shaker

2018-05-01

Cadmium telluride (CdTe) quantum dots (QDs) were prepared from an aqueous solution containing CdCl2 and Te precursor in the presence of thioglycolic acid (TGA) or L-cysteine as capping agents. Two optical sensors have been developed for Hg2+ ions with very low concentration in the range of nanomolar (nM) or picomolar (pM) depending on the type of capping agents and based on photoluminescence (PL) quenching of CdTe QDs. It was observed that low concentrations of Hg2+ ions quench the fluorescence spectra of CdTe QDs and TGA capped CdTe QDs exhibited a linear response to Hg2+ ions in the concentration range from 1.25 to 10 nM. Moreover, it was found that L-cysteine capped CdTe QDs optical sensor with a sensitivity of 6 × 109 M-1, exhibited a linear coefficient of 0.99 and showed a detection limit of 2.7 pM in range from 5 to 25 pM of Hg2+ ions was achieved. In contrast to the significant response that was observed for Hg2+, a weak signal response was noted upon the addition of other metal ions indicating an excellent selectivity of CdTe QDs towards Hg2+.

Optical Properties of Al- and Sb-Doped CdTe Thin Films

Directory of Open Access Journals (Sweden)

A. A. J. Al-Douri

2010-01-01

Full Text Available Nondoped and (Al, Sb-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures ( of room temperature (RT and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n, extinction coefficient (, and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant as n, and real and imaginary parts of the dielectric coefficient increase.

Electrochemical Determination of Uric Acid at CdTe Quantum Dot Modified Glassy Carbon Electrodes.

Science.gov (United States)

Pan, Deng; Rong, Shengzhong; Zhang, Guangteng; Zhang, Yannan; Zhou, Qiang; Liu, Fenghai; Li, Miaojing; Chang, Dong; Pan, Hongzhi

2015-01-01

Cyclic voltammetry and differential pulse voltammetry were used to investigate the electrochemical behavior of uric acid (UA) at a CdTe quantum dot (QD) modified the glassy carbon electrode (GCE). CdTe QDs, as new semiconductor nanocrystals, can greatly improve the peak current of UA. The anodic peak current of UA was linear with its concentration between 1.0×10(-6) and 4.0×10(-4) M in 0.1 M pH 5.0 phosphate buffer solution. The LOD for UA at the CdTe electrode (1.0×10(-7) M) was superior to that of the GCE. In addition, we also determined the effects of scan rate, pH, and interferences of UA for the voltammetric behavior and detection. The results indicated that modified electrode possessed excellent reproducibility and stability. Finally, a new and efficient electrochemical sensor for detecting UA was developed.

Design considerations for CdTe Nanotetrapods as electronic devices. krogstrup@fys.ku.dk.

Science.gov (United States)

Teich-McGoldrick, S L; Bellanger, M; Caussanel, M; Tsetseris, L; Pantelides, S T; Glotzer, S C; Schrimpf, R D

2009-11-01

We investigate the feasibility of using CdTe nanotetrapods as circuit elements using models and simulation at multiple scales. Technology computer-aided design tools are used to simulate the electrical behavior for both metal-semiconductor field-effect transistors and junction field-effect transistors. Our results show that by varying the doping concentrations and material composition, CdTe nanotetrapods have the potential to be useful circuit elements. Monte Carlo simulations provide insight into how control over interparticle and particle-substrate interactions can lead to the directed assembly of ordered arrays of electrically gated nanotetrapods.

Characterization of CdTe and (CdZn)Te detectors with different metal contacts

Science.gov (United States)

Pekárek, J.; Belas, E.; Grill, R.; Uxa, Å.; James, R. B.

2013-09-01

In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

Point Defect Properties of Cd(Zn)Te and TlBr for Room-Temperature Gamma Radiation Detectors

Science.gov (United States)

Lordi, Vincenzo

2013-03-01

The effects of various crystal defects in CdTe, Cd1-xZnxTe (CZT), and TlBr are critical for their performance as room-temperature gamma radiation detectors. We use predictive first principles theoretical methods to provide fundamental, atomic scale understanding of the defect properties of these materials to enable design of optimal growth and processing conditions, such as doping, annealing, and stoichiometry. Several recent cases will be reviewed, including (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties of CZT; (iii) point defect diffusion and binding related to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects--principally vacancies--on the intrinsic material properties of TlBr, particularly electronic and ionic conductivity; (v) tailored doping of TlBr to independently control the electronic and ionic conductivity; and (vi) the effects of metal impurities on the electronic properties and device performance of TlBr detectors. Prepared by LLNL under Contract DE-AC52-07NA27344 with support from the National Nuclear Security Administration Office of Nonproliferation and Verification Research and Development NA-22.

Strain relaxation of CdTe on Ge studied by medium energy ion scattering

Energy Technology Data Exchange (ETDEWEB)

Pillet, J.C., E-mail: jean-christophe.pillet@cea.fr [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA, LETI, Département Optique et Photonique, F38054 Grenoble (France); Pierre, F. [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA, LETI, Service de Caractérisation des Matériaux et Composants, F38054 Grenoble (France); Jalabert, D. [Univ. Grenoble Alpes, CEA, LETI, MINATEC campus, F38000 Grenoble (France); CEA-INAC/UJF-Grenoble 1 UMR-E, SP2M, LEMMA, Minatec Grenoble F-38054 (France)

2016-10-01

We have used the medium energy ion scattering (MEIS) technique to assess the strain relaxation in molecular-beam epitaxial (MBE) grown CdTe (2 1 1)/Ge (2 1 1) system. A previous X-ray diffraction study, on 10 samples of the same heterostructure having thicknesses ranging from 25 nm to 10 μm has allowed the measurement of the strain relaxation on a large scale. However, the X-ray diffraction measurements cannot achieve a stress measurement in close proximity to the CdTe/Ge interface at the nanometer scale. Due to the huge lattice misfit between the CdTe and Ge, a high degree of disorder is expected at the interface. The MEIS in channeling mode is a good alternative in order to profile defects with a high depth resolution. For a 21 nm thick CdTe layer, we observed, at the interface, a high density of Cd and/or Te atoms moved from their expected crystallographic positions followed by a rapid recombination of defects. Strain relaxation mechanisms in the vicinity of the interface are discussed.

Comparison of structural properties of thermally evaporated CdTe thin films on different substrates

International Nuclear Information System (INIS)

Tariq, G.H.; Anis-ur-Rehman, M.

2011-01-01

The direct energy band gap in the range of 1.5 eV and the high absorption coefficient (105 cm/sup -1/) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (1 cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2 X 10/sup -5/mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200 deg. C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type. (author)

Growth of CdTe on Si(100) surface by ionized cluster beam technique: Experimental and molecular dynamics simulation

Energy Technology Data Exchange (ETDEWEB)

Araghi, Houshang, E-mail: araghi@aut.ac.ir [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Zabihi, Zabiholah [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of); Nayebi, Payman [Department of Physics, College of Technical and Engineering, Saveh Branch, Islamic Azad University, Saveh (Iran, Islamic Republic of); Ehsani, Mohammad Mahdi [Department of Physics, Amirkabir University of Technology, Tehran (Iran, Islamic Republic of)

2016-10-15

II–VI semiconductor CdTe was grown on the Si(100) substrate surface by the ionized cluster beam (ICB) technique. In the ICB method, when vapors of solid materials such as CdTe were ejected through a nozzle of a heated crucible into a vacuum region, nanoclusters were created by an adiabatic expansion phenomenon. The clusters thus obtained were partially ionized by electron bombardment and then accelerated onto the silicon substrate at 473 K by high potentials. The cluster size was determined using a retarding field energy analyzer. The results of X-ray diffraction measurements indicate the cubic zinc blende (ZB) crystalline structure of the CdTe thin film on the silicon substrate. The CdTe thin film prepared by the ICB method had high crystalline quality. The microscopic processes involved in the ICB deposition technique, such as impact and coalescence processes, have been studied in detail by molecular dynamics (MD) simulation.

Growth and characterization of CdTe absorbers on GaAs by MBE for high concentration PV solar cells

Energy Technology Data Exchange (ETDEWEB)

Ari, Ozan; Polat, Mustafa; Selamet, Yusuf [Department of Physics, Izmir Institute of Technology, Izmir 35430 (Turkey); Karakaya, Merve [Department of Material Science and Engineering, Izmir Institute of Technology, Izmir 35430 (Turkey)

2015-11-15

CdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates with a molecular beam epitaxy (MBE) which is a clean deposition technology. We show that high quality CdTe absorber layers can be grown with full width half maximum of X-ray diffraction rocking curves (XRD RC) as low as 227 arc-seconds with 0.5% thickness uniformity that a 2 μm layer is capable of absorbing 99% of AM1.5 solar radiation. Bandgap of the CdTe absorber is found as 1.483 eV from spetroscopic ellipsometry (SE) measurements. Also, high absorption coefficient is calculated from the results, which is ∝5 x 10{sup 5}cm{sup -1} in solar radiation spectrum. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Analysis of MCNP simulated gamma spectra of CdTe detectors for boron neutron capture therapy.

Science.gov (United States)

Winkler, Alexander; Koivunoro, Hanna; Savolainen, Sauli

2017-06-01

The next step in the boron neutron capture therapy (BNCT) is the real time imaging of the boron concentration in healthy and tumor tissue. Monte Carlo simulations are employed to predict the detector response required to realize single-photon emission computed tomography in BNCT, but have failed to correctly resemble measured data for cadmium telluride detectors. In this study we have tested the gamma production cross-section data tables of commonly used libraries in the Monte Carlo code MCNP in comparison to measurements. The cross section data table TENDL-2008-ACE is reproducing measured data best, whilst the commonly used ENDL92 and other studied libraries do not include correct tables for the gamma production from the cadmium neutron capture reaction that is occurring inside the detector. Furthermore, we have discussed the size of the annihilation peaks of spectra obtained by cadmium telluride and germanium detectors. Copyright © 2017 Elsevier Ltd. All rights reserved.

Measurement of position dependence of spectral distribution in primary X-ray beam of CT system using compton spectroscopy

International Nuclear Information System (INIS)

Matsumoto, Masao; Maeda, Koji; Maeda, Koji

2005-01-01

Our purpose is to acquire the diagnostic x-ray spectra of the CT system easily under clinical conditions by Compton scatter spectroscopy using a high resolution Schottky CdTe detector recently developed and to estimate the quality and quantity of these spectra compared the relative exposure measured using an ionization chamber with curves measured by the reconstructed spectra. Although the spectral broadening and the fluctuation were slightly shown, the errors of the relative exposure were under 10%. Though the experimental arrangement of this method is so easy and reconstructed algorithm is simple, these results suggested that this method is little influenced by the variation of dose rates or property of the incident x rays. We therefore propose that the Compton scatter spectroscopy with the newly developed Schottky CdTe detector is suitable for measuring the diagnostic x-ray spectra of the CT system under the clinical conditions and useful for quality assurance and quality control of the clinical x-ray CT system. (author)

Radiation detectors: needs and prospects

International Nuclear Information System (INIS)

Armantrout, G.A.

1981-01-01

Important applications for x- and γ-ray spectroscopy are found in prospecting, materials characterization, environmental monitoring, the life sciences, and nuclear physics. The specific requirements vary for each application with varying degrees of emphasis on either spectrometer resolution, detection efficiency, or both. Since no one spectrometer is ideally suited to this wide range of needs, compromises are usually required. Gas and scintillation spectrometers have reached a level of maturity, and recent interest has concentrated on semiconductor spectrometers. Germanium detectors are showing continuing refinement and are the spectrometers of choice for high resolution applications. The new high-Z semiconductors, such as CdTe and HgI 2 , have shown steady improvement but are limited in both resolution and size and will likely be used only in applications which require their unique properties

Luminous composite ultrathin films of CdTe quantum dots/silk fibroin co-assembled with layered doubled hydroxide: Enhanced photoluminescence and biosensor application

Directory of Open Access Journals (Sweden)

Muhammad Sohail Haroone

2018-06-01

Full Text Available Quantum dots (QDs luminescent films are extensively applied to optoelectronics and optical devices. However, QDs aggregation results in the quenching of their fluorescence property which limits their practical applications to a greater extent. In order to resolve this issue, 3-mercaptopropionic acid (3-MPA functionalized Cadmium Tellurium (CdTe QDs were stabilized by silk fibroin (SB and co-assembled with layered doubled hydroxide (LDH to form (QDs@SF/LDHn ultrathin films (UTFs via the layer-by-layer (LBL technique. UV–Vis absorption and fluorescence spectroscopy showed a stepwise and normal growth of the films upon increasing the number of deposition cycles. XRD and AFM studies confirmed the formation of a periodic layered structure and regular surface morphology of the thin films. As compared to (CdTe QDs/LDHnUTFs, the (CdTe QDs@SF/LDHnUTFs displayed fluorescence enhancement and longer fluorescent lifetime, both in solid states and aqueous solutions. Furthermore compared with the solution state, the fluorescence enhancement of SF-RC and SF-β are, respectively, 7 times and 17 times in the (CdTe QDs@SF/LDHn UTFs, indicating that the LDH nanosheets favor the fluorescence enhancement effect on the CdTe QDs@SF. The fabricated materials displayed fluorescence response to a biological molecule such as immune globulin, lgG. Thus, the (CdTe QDs@SF/LDHn UTFs has a potential to be used as biosensor. Keywords: CdTe quantum dots, Silk fibroin, Layered doubled hydroxide, Co-assembly, Fluorescence enhancement

Pulse-height loss in the signal readout circuit of compound semiconductor detectors

Science.gov (United States)

Nakhostin, M.; Hitomi, K.

2018-06-01

Compound semiconductor detectors such as CdTe, CdZnTe, HgI2 and TlBr are known to exhibit large variations in their charge collection times. This paper considers the effect of such variations on the measurement of induced charge pulses by using resistive feedback charge-sensitive preamplifiers. It is shown that, due to the finite decay-time constant of the preamplifiers, the capacitive decay during the signal readout leads to a variable deficit in the measurement of ballistic signals and a digital pulse processing method is employed to correct for it. The method is experimentally examined by using sampled pulses from a TlBr detector coupled to a charge-sensitive preamplifier with 150 μs of decay-time constant and 20 % improvement in the energy resolution of the detector at 662 keV is achieved. The implications of the capacitive decay on the correction of charge-trapping effect by using depth-sensing technique are also considered.

Photovoltaic properties of in-doped CDTE thin films deposited on metallic substrates

International Nuclear Information System (INIS)

Wagah F Mohamad; Khalid K Mohammed

2006-01-01

CDTE is a promising photovoltaic material due to its nearly optimum band gap and high optical absorption coefficient. This study looks into the effect of indium doping of the CdTe thin film deposited on stainless steel substrate. The conventional cells are usually manufactured on glass substrate and offer no weight advantage over single crystal cells. Since the metal foil support can be as thin as (40-60) μm and the weight saving is significant. The spectral response of the photo current with and without indium doping was studied in detail and compared with theory. The sub gap response of the resulted structure is particularly strong and extends to wavelengths up to 1000 nm

The role of substrate surface alteration in the fabrication of vertically aligned CdTe nanowires

International Nuclear Information System (INIS)

Neretina, S; Devenyi, G A; Preston, J S; Mascher, P; Hughes, R A; Sochinskii, N V

2008-01-01

Previously we have described the deposition of vertically aligned wurtzite CdTe nanowires derived from an unusual catalytically driven growth mode. This growth mode could only proceed when the surface of the substrate was corrupted with an alcohol layer, although the role of the corruption was not fully understood. Here, we present a study detailing the remarkable role that this substrate surface alteration plays in the development of CdTe nanowires; it dramatically improves the size uniformity and largely eliminates lateral growth. These effects are demonstrated to arise from the altered surface's ability to limit Ostwald ripening of the catalytic seed material and by providing a surface unable to promote the epitaxial relationship needed to sustain a lateral growth mode. The axial growth of the CdTe nanowires is found to be exclusively driven through the direct impingement of adatoms onto the catalytic seeds leading to a self-limiting wire height associated with the sublimation of material from the sidewall facets. The work presented furthers the development of the mechanisms needed to promote high quality substrate-based vertically aligned CdTe nanowires. With our present understanding of the growth mechanism being a combination of selective area epitaxy and a catalytically driven vapour-liquid-solid growth mode, these results also raise the intriguing possibility of employing this growth mode in other material systems in an effort to produce superior nanowires

Thin film CdTe solar cells by close spaced sublimation: Recent results from pilot line

International Nuclear Information System (INIS)

Siepchen, B.; Drost, C.; Späth, B.; Krishnakumar, V.; Richter, H.; Harr, M.; Bossert, S.; Grimm, M.; Häfner, K.; Modes, T.; Zywitzki, O.; Morgner, H.

2013-01-01

CdTe is an attractive material to produce high efficient and low cost thin film solar cells. The semiconducting layers of this kind of solar cell can be deposited by the Close Spaced Sublimation (CSS) process. The advantages of this technique are high deposition rates and an excellent utilization of the raw material, leading to low production costs and competitive module prices. CTF Solar GmbH is offering equipment and process knowhow for the production of CdTe solar modules. For further improvement of the technology, research is done at a pilot line, which covers all relevant process steps for manufacture of CdTe solar cells. Herein, we present the latest results from the process development and our research activities on single functional layers as well as for complete solar cell devices. Efficiencies above 13% have already been obtained with Cu-free back contacts. An additional focus is set on different transparent conducting oxide materials for the front contact and a Sb 2 Te 3 based back contact. - Highlights: ► Laboratory established on industrial level for CdTe solar cell research ► 13.0% cell efficiency with our standard front contact and Cu-free back contact ► Research on ZnO-based transparent conducting oxide and Sb 2 Te 3 back contacts ► High resolution scanning electron microscopy analysis of ion polished cross section

Studies on interaction between CdTe quantum dots and α ...

Indian Academy of Sciences (India)

Administrator

ence of CdTe QDs were also studied. α-Chy can maintain its high activity and stability under different. pH conditions ... creasing attention in the past decade. 1. Because of ... divided into 'poor' and 'good' substrate, depending on their kinetic ...

A low-cost non-toxic post-growth activation step for CdTe solar cells

Science.gov (United States)

Major, J. D.; Treharne, R. E.; Phillips, L. J.; Durose, K.

2014-07-01

Cadmium telluride, CdTe, is now firmly established as the basis for the market-leading thin-film solar-cell technology. With laboratory efficiencies approaching 20 per cent, the research and development targets for CdTe are to reduce the cost of power generation further to less than half a US dollar per watt (ref. 2) and to minimize the environmental impact. A central part of the manufacturing process involves doping the polycrystalline thin-film CdTe with CdCl2. This acts to form the photovoltaic junction at the CdTe/CdS interface and to passivate the grain boundaries, making it essential in achieving high device efficiencies. However, although such doping has been almost ubiquitous since the development of this processing route over 25 years ago, CdCl2 has two severe disadvantages; it is both expensive (about 30 cents per gram) and a water-soluble source of toxic cadmium ions, presenting a risk to both operators and the environment during manufacture. Here we demonstrate that solar cells prepared using MgCl2, which is non-toxic and costs less than a cent per gram, have efficiencies (around 13%) identical to those of a CdCl2-processed control group. They have similar hole densities in the active layer (9 × 1014 cm-3) and comparable impurity profiles for Cl and O, these elements being important p-type dopants for CdTe thin films. Contrary to expectation, CdCl2-processed and MgCl2-processed solar cells contain similar concentrations of Mg; this is because of Mg out-diffusion from the soda-lime glass substrates and is not disadvantageous to device performance. However, treatment with other low-cost chlorides such as NaCl, KCl and MnCl2 leads to the introduction of electrically active impurities that do compromise device performance. Our results demonstrate that CdCl2 may simply be replaced directly with MgCl2 in the existing fabrication process, thus both minimizing the environmental risk and reducing the cost of CdTe solar-cell production.

Molecular beam epitaxy of iodine-doped CdTe and (CdMg)Te

Energy Technology Data Exchange (ETDEWEB)

Fischer, F.; Waag, A.; Litz, Th.; Scholl, S.; Schmitt, M.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstofforschung, Stuttgart (Germany))

1994-08-01

The n-type doping of CdTe and (CdMg)Te by the use of the solid dopant source material ZnI[sub 2] is reported. Doping levels as high as 7x10[sup 18] cm[sup -3] have been obtained in CdTe with carrier mobilities around 500 cm[sup 2]/V[center dot]s at room temperature. For a dopant incorporation higher than 1x10[sup 19] cm[sup -3] the free carrier concentration decreases, indicating the onset of a compensation mechanism, which is observed in the case of chlorine and bromine doping, too. Preliminary experiments show that with increasing Mg concentration the free carrier concentration decreases. Nevertheless, CdMgTe with a magnesium concentration x=0.37 (band gap 2.2 eV at room temperature) can be doped up to 2x10[sup 17] cm[sup -3]. The existence of deep donor levels in this CdTe based ternary is not supposed to be the only reason for the reduction of the free carrier concentration. For high Mg support during molecular beam epitaxial (MBE) growth of wide gap (CdMg)Te layers, the ZnI[sub 2] incorporation is reduced, leading to low doping levels, too

A novel ascorbic acid sensor based on the Fe3+/Fe2+ modulated photoluminescence of CdTe quantum dots@SiO2 nanobeads.

Science.gov (United States)

Ma, Qiang; Li, Yang; Lin, Zi-Han; Tang, Guangchao; Su, Xing-Guang

2013-10-21

In this paper, CdTe quantum dot (QD)@silica nanobeads were used as modulated photoluminescence (PL) sensors for the sensing of ascorbic acid in aqueous solution for the first time. The sensor was developed based on the different quenching effects of Fe(2+) and Fe(3+) on the PL intensity of the CdTe QD@ silica nanobeads. Firstly, the PL intensity of the CdTe QDs was quenched in the presence of Fe(3+). Although both Fe(2+) and Fe(3+) could quench the PL intensity of the CdTe QDs, the quenching efficiency were quite different for Fe(2+) and Fe(3+). The PL intensity of the CdTe QD@silica nanobeads can be quenched by about 15% after the addition of Fe(3+) (60 μmol L(-1)), while the PL intensity of the CdTe QD@silica nanobeads can be quenched about 49% after the addition of Fe(2+) (60 μmol L(-1)). Therefore, the PL intensity of the CdTe QD@silica nanobeads decreased significantly when Fe(3+) was reduced to Fe(2+) by ascorbic acid. To confirm the strategy of PL modulation in this sensing system, trace H2O2 was introduced to oxidize Fe(2+) to Fe(3+). As a result, the PL intensity of the CdTe QD@silica nanobeads was partly recovered. The proposed sensor could be used for ascorbic acid sensing in the concentration range of 3.33-400 μmol L(-1), with a detection limit (3σ) of 1.25 μmol L(-1) The feasibility of the proposed sensor for ascorbic acid determination in tablet samples was also studied, and satisfactory results were obtained.

Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Gross, Dieter Konrad Michael

2013-11-08

Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

Charge separation and transfer in hybrid type II tunneling structures of CdTe and CdSe nanocrystals

International Nuclear Information System (INIS)

Gross, Dieter Konrad Michael

2013-01-01

Closely packed nanocrystal systems have been investigated in this thesis with respect to charge separation by charge carrier tunneling. Clustered and layered samples have been analyzed using PL-measurements and SPV-methods. The most important findings are reviewed in the following. A short outlook is also provided for potential further aspects and application of the presented results. The main purpose of this thesis was to find and quantify electronic tunneling transfer in closely packed self-assembled nanocrystal structures presenting quantum mechanical barriers of about 1 nm width. We successfully used hybrid assemblies of CdTe and CdSe nanocrystals where the expected type II alignment between CdTe and CdSe typically leads to a concentration of electrons in CdSe and holes in CdTe nanocrystals. We were able to prove the charge selectivity of the CdTe-CdSe nanocrystal interface which induces charge separation. We mainly investigated the effects related to the electron transfer from CdTe to CdSe nanocrystals. Closely packing was achieved by two independent methods: the disordered colloidal clustering in solution and the layered assembly on dry glass substrates. Both methods lead to an inter-particle distance of about 1 nm of mainly organic material which acts as a tunneling barrier. PL-spectroscopy was applied. The PL-quenching of the CdTe nanocrystals in hybrid assemblies indicates charge separation by electron transfer from CdTe to CdSe nanocrystals. A maximum quenching rate of up to 1/100 ps was measured leading to a significant global PL-quenching of up to about 70 % for the CdTe nanocrystals. It was shown that charge separation dynamics compete with energy transfer dynamics and that charge separation typically dominates. The quantum confinement effect was used to tune the energetic offset between the CdTe and CdSe nanocrystals. We thus observe a correlation of PL-quenching and offset of the energy states for the electron transfer. The investigated PL

Structural and luminescent properties of Fe3+ doped PVA capped CdTe nanoparticles

Directory of Open Access Journals (Sweden)

Ravindranadh K.

2017-07-01

Full Text Available During recent decades, magnetic and semiconductor nanoparticles have attracted significant attention of scientists in various fields of engineering, physics, chemistry, biology and medicine. Fe3+ doped PVA capped CdTe nanoparticles were prepared by co-precipitation method and characterized by powder X-ray diffraction, SEM, TEM, FT-IR, optical, EPR and PL techniques to collect the information about the crystal structure, coordination/local site symmetry of doped Fe3+ ions in the host lattice and the luminescent properties of prepared sample. Powder XRD data revealed that the crystal structure belongs to a cubic system and its lattice cell parameters were evaluated. The average crystallite size was estimated to be 8 nm. The morphology of prepared samples was analyzed by using SEM and TEM investigations. Functional groups of the prepared sample were observed in FT-IR spectra. Optical absorption and EPR studies have shown that on doping, Fe3+ ions enter the host lattice in octahedral site symmetry. PL studies of Fe3+ doped PVA capped CdTe nanoparticles revealed UV and blue emission bands. CIE chromaticity coordinates were also calculated from the emission spectrum of Fe3+ doped PVA capped CdTe nanoparticles.

Trends in the design of front-end systems for room temperature solid state detectors

International Nuclear Information System (INIS)

Manfredi, Pier F.; Re, Valerio

2003-01-01

The paper discusses the present trends in the design of low-noise front-end systems for room temperature semiconductor detectors. The technological advancement provided by submicron CMOS and BiCMOS processes is examined from several points of view. The noise performances are a fundamental issue in most detector applications and suitable attention is devoted to them for the purpose of judging whether or not the present processes supersede the solutions featuring a field-effect transistor as a front-end element. However, other considerations are also important in judging how well a monolithic technology suits the front-end design. Among them, the way a technology lends itself to the realization of additional functions, for instance, the charge reset in a charge-sensitive loop or the time-variant filters featuring the special weighting functions that may be requested in some applications of CdTe or CZT detectors

Ablation of CdTe with 100 μs Nd:YAG laser pulses: dependence on target preparation method

International Nuclear Information System (INIS)

Rzeszutek, J.; Savchuk, V.; Oszwaldowski, M.

2008-01-01

The results of experimental studies of the ablation of CdTe with a pulsed Nd:YAG laser (wavelength 1064 nm) performed with 100 μs pulses and repetition time of 35 Hz are presented for the pulse energy range from 0.13 to 0.25 J. The main goal is to elucidate the dependence of the ablation process on the target preparation method. The investigation of the vapour stream intensity and chemical composition and their evolution with time are performed with a quadrupole mass spectrometer synchronized with the laser pulses. These studies are performed for three kinds of targets: a target made of CdTe bulk crystal (BC target), a target made of CdTe fine powder pressed under the pressure of 700 atm (PP target), and a target made of loose CdTe powder (N-PP target). The applicability of these targets for obtaining high quality CdTe thin films is determined. The best chemical composition of the vapour stream can be obtained with the BC target. A major drawback of this target is the energetic threshold for ablation with Nd:YAG laser and resulting delay in the ablation process above the threshold. The advantage of powder targets over BC target is the lack of any ablation threshold or delay. Weaker angular dependence of the particle emission (associated with the surface roughness), if confirmed in further experiments, can be the most important advantage of PP and N-PP targets. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Super high voltage Schottky diode with low leakage current for x- and γ-ray detector application

International Nuclear Information System (INIS)

Kosyachenko, L. A.; Sklyarchuk, V. M.; Sklyarchuk, O. F.; Maslyanchuk, O. L.; Gnatyuk, V. A.; Aoki, T.

2009-01-01

A significant improvement in x-/γ-ray detector performance has been achieved by forming both rectifying and near-Ohmic contacts by the deposition of Ni on opposite surfaces of semi-insulating CdTe crystals pretreated by special chemical etching and Ar-ion bombardment with different parameters. The reduced injection of the minority carriers from the near-Ohmic contact in the neutral part of the diode provides low leakage current even at high bias ( 2 at 2000 V and 293 K). The electrical properties of the detectors are well described quantitatively by the generation-recombination Sah-Noyce-Shockley theory excepting the high reverse voltage range where some injection of minority carriers takes place

High luminescent L-cysteine capped CdTe quantum dots prepared at different reaction times

Science.gov (United States)

Kiprotich, Sharon; Onani, Martin O.; Dejene, Francis B.

2018-04-01

This paper reports a facile synthesis route of high luminescent L-cysteine capped CdTe quantum dots (QDs). The effect of reaction time on the growth mechanism, optical and physical properties of the CdTe QDs was investigated in order to find the suitability of them towards optical and medical applications. The representative high-resolution transmission microscopy (HRTEM) analysis showed that the as-obtained CdTe QDs appeared as spherical particles with excellent monodispersity. The images exhibited clear lattice fringes which are indicative of good crystallinity. The X-ray diffraction (XRD) pattern displayed polycrystalline nature of the QDs which correspond well to zinc blende phase of bulk CdTe. The crystallite sizes calculated from the Scherrer equation were less than 10 nm for different reaction times which were in close agreement with the values estimated from HRTEM. An increase in reaction time improved crystallinity of the sample as explained by highest peak intensity of the XRD supported by the photoluminescence emission spectra which showed high intensity at a longer growth time. It was observed that for prolonged growth time the emission bands were red shifted from about 517-557 nm for 5-180 min of reaction time due to increase in particle sizes. Ultraviolet and visible analysis displayed well-resolved absorption bands which were red shifted upon an increase in reaction time. There was an inverse relation between the band gap and reaction time. Optical band gap decreases from 3.98 to 2.59 eV with the increase in reaction time from 15 to 180 min.

Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells

Energy Technology Data Exchange (ETDEWEB)

Dzhafarov, T.D.; Yesilkaya, S.S.; Yilmaz Canli, N.; Caliskan, M. [Department of Physics, Yildiz Technical University, Davutpasa, 34210 Istanbul (Turkey)

2005-01-31

The effective diffusion coefficients of Cu for thermal and photodiffusion in the CdTe films have been estimated from resistivity versus duration of thermal or photoannealing curves. In the temperature range 60-200{sup o}C the effective coefficient of thermal diffusion (D{sub t}) and photodiffusion (D{sub ph}) are described as D{sub t}=7.3x10{sup -7}exp(-0.33/kT) and D{sub ph}=4.7x10{sup -8}exp(-0.20/kT). It is found that the diffusion doping of CdTe thin films by Cu at 400{sup o}C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.

Caliste-SO, a CdTe based spectrometer for bright solar event observations in hard X-rays

Energy Technology Data Exchange (ETDEWEB)

Meuris, A., E-mail: aline.meuris@cea.fr [CEA-Irfu – CEA Saclay, F-91191 Gif-sur-Yvette Cedex (France); Limousin, O.; Gevin, O.; Blondel, C.; Martignac, J. [CEA-Irfu – CEA Saclay, F-91191 Gif-sur-Yvette Cedex (France); Vassal, M.-C.; Soufflet, F.; Fiant, N. [3D Plus – 408 rue Hélène Boucher, F-78532 Buc Cedex (France); Bednarzik, M.; Stutz, S. [Paul Scherrer Institute (PSI), Laboratory for Micro- and Nanotechnology, 5232 Villigen (Switzerland); Grimm, O.; Commichau, V. [ETH Zurich, Institute for Particle Physics, Schafmattstrasse 20, 8093 Zurich (Switzerland)

2015-07-01

Caliste-SO is a CdTe hybrid detector designed to be used as a spectrometer for a hard X-ray Fourier telescope. The imaging technique was implemented in the Yohkoh satellite in 1991 and the RHESSI satellite in 2002 to achieve arc-second angular resolution images of solar flares with spectroscopic capabilities. The next generation of such instruments will be the Spectrometer Telescope Imaging X-rays (STIX) on-board the Solar Orbiter mission adopted by the European Space Agency in 2011 for launch in 2017. The design and performance of Caliste-SO allows both high spectral resolution and high count rate measurements from 4 to 150 keV with limited demands on spacecraft resources such as mass, power and volume (critical for interplanetary missions). The paper reports on the flight production of the Caliste-SO devices for STIX, describing the test facilities built-up in Switzerland and France. It illustrates some results obtained with the first production samples that will be mounted in the STIX engineering model.

Theoretical studies of the pressure-induced zinc-blende to cinnabar phase transition in CdTe and thermodynamical properties of each phase

International Nuclear Information System (INIS)

Brik, M.G.; Łach, P.; Karczewski, G.; Wojtowicz, T.; Kamińska, A.; Suchocki, A.

2013-01-01

Luminescence of CdTe quantum dots embedded in ZnTe is quenched at pressure of about 4.5 GPa in the high-pressure experiments. This pressure-induced quenching is attributed to the “zinc-blende–cinnabar” phase transition in CdTe, which was confirmed by the first-principles calculations. Theoretical analysis of the pressure at which the phase transition occurs for CdTe was performed using the CASTEP module of Materials Studio package with both generalized gradient approximation (GGA) and local density approximation (LDA). The calculated phase transition pressures are equal to about 4.4 GPa and 2.6 GPa, according to the GGA and LDA calculations, respectively, which is in a good agreement with the experimental value. Theoretically estimated value of the pressure coefficient of the band-gap luminescence in zinc-blende structure is in very good agreement with that recently measured in the QDs structures. The calculated Debye temperature, elastic constants and specific heat capacity for the zinc-blend structure agree well with the experimental data; the data for the cinnabar phase are reported here for the first time to the best of the authors' knowledge. - Highlights: • Quenching of luminescence of CdTe quantum dots embedded in ZnTe is theoretically explained. • The theoretical calculation of elastic and thermodynamic properties of CdTe by two types of ab-initio methods. • Theoretical calculations of some optical properties of CdTe under pressure in zinc-blende and cinnabar phases

Application of GaAs and CdTe photoconductor detectors to x-ray flash radiography

International Nuclear Information System (INIS)

Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L.

1991-01-01

Semi-insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X ray single shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 μrad. The dynamic range was about 4 decades in amplitude or charges, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X ray generator monitoring with such detectors or with neutron preirradiated photoconductors

Application of GaAs and CdTe photoconductor detectors to X-ray flash radiography

International Nuclear Information System (INIS)

Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L.; Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M.

1992-01-01

Some insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X-ray single-shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 μrad. The dynamic range was about 4 decades in amplitude or charge, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X-ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X-ray generator monitoring with such detectors or with neutron preirradiated photoconductors. (orig.)

Application of GaAs and CdTe photoconductor detectors to X-ray flash radiography

Energy Technology Data Exchange (ETDEWEB)

Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L. (CEA, Direction des Technologies Avancees, Lab. d' Electronique, de Technologie et d' Instrumentation, DSYS, 38 - Grenoble (France)); Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M. (CEA, Direction des Applications Militaires, 77 - Courtry (France))

1992-11-15

Some insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X-ray single-shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 [mu]rad. The dynamic range was about 4 decades in amplitude or charge, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X-ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X-ray generator monitoring with such detectors or with neutron preirradiated photoconductors. (orig.).

Application of GaAs and CdTe photoconductor detectors to x-ray flash radiography

Energy Technology Data Exchange (ETDEWEB)

Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L. [CEA Centre d`Etudes de Grenoble, 38 (FR). Direction des Technologies Avancees; Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M. [CEA Centre d`Etudes de Vaujours, 77 - Courtry (FR)

1991-12-31

Semi-insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X ray single shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 {mu}rad. The dynamic range was about 4 decades in amplitude or charges, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X ray generator monitoring with such detectors or with neutron preirradiated photoconductors.

Unusual strain in homoepitaxial CdTe(001) layers grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Heinke, H.; Waag, A.; Moeller, M.O.; Regnet, M.M.; Landwehr, G. [Physikalisches Institut, Univ. Wuerzburg (Germany)

1994-01-01

For homoepitaxial CdTe(001) films grown by molecular beam epitaxy onto CdTe(001) substrates, a difference between the lattice constants of the substrate and the layer was systematically observed using high resolution X-ray diffraction. Reciprocal space maps point out an unusual strain state of such layers which is indicated by the position of their reciprocal lattice points. They lie in a section of reciprocal space which is usually forbidden by elasticity theory. The strain is laterally anisotropic leading to a monoclinic symmetry of the thin films. The lateral strain is depth dependent. Possible reasons for the formation of the unusual strain are discussed, and a correlation of the unusual strain with the growth conditions is attempted

Synthesis of CdTe QDs/single-walled aluminosilicate nanotubes hybrid compound and their antimicrobial activity on bacteria

Energy Technology Data Exchange (ETDEWEB)

Geraldo, Daniela A., E-mail: daniela.geraldo@unab.cl [Universidad Andres Bello, Departamento de Ciencias Quimicas (Chile); Arancibia-Miranda, Nicolas [CEDENNA, Center for the Development of Nanoscience and Nanotechnology (Chile); Villagra, Nicolas A. [Universidad Andres Bello, Laboratorio de Microbiologia, Facultad de Ciencias Biologicas (Chile); Mora, Guido C. [Universidad Andres Bello, Unidad de Microbiologia, Facultad de Medicina (Chile); Arratia-Perez, Ramiro [Universidad Andres Bello, Departamento de Ciencias Quimicas (Chile)

2012-12-15

The use of molecular conjugates of quantum dots (nanocrystalline fluorophores) for biological purposes have received much attention due to their improved biological activity. However, relatively, little is known about the synthesis and application of aluminosilicate nanotubes decorated with quantum dots (QDs) for imaging and treatment of pathogenic bacteria. This paper describes for a first time, the use of single-walled aluminosilicate nanotubes (SWNT) (imogolite) as a one-dimensional template for the in situ growth of mercaptopropionic acid-capped CdTe QDs. This new nanohybrid hydrogel was synthesized by a simple reaction pathway and their enhanced optical properties were monitored by fluorescence and UV-Vis spectroscopy, confirming that the use of these nanotubes favors the confinement effects of net CdTe QDs. In addition, studies of FT-IR spectroscopy and transmission electron microscopy confirmed the non-covalent functionalization of SWNT. Finally, the antimicrobial activity of SWNT coated with CdTe QDs toward three opportunistic multi-resistant pathogens such as Salmonella typhimurium, Acinetobacter baumannii, and Pseudomonas aeruginosa were tested. Growth inhibition tests were conducted by exposing growing bacteria to CdTe QDs/SWNT hybrid compound showing that the new nano-structured composite is a potential antimicrobial agent for heavy metal-resistant bacteria.

Synthesis of CdTe QDs/single-walled aluminosilicate nanotubes hybrid compound and their antimicrobial activity on bacteria

International Nuclear Information System (INIS)

Geraldo, Daniela A.; Arancibia-Miranda, Nicolás; Villagra, Nicolás A.; Mora, Guido C.; Arratia-Perez, Ramiro

2012-01-01

The use of molecular conjugates of quantum dots (nanocrystalline fluorophores) for biological purposes have received much attention due to their improved biological activity. However, relatively, little is known about the synthesis and application of aluminosilicate nanotubes decorated with quantum dots (QDs) for imaging and treatment of pathogenic bacteria. This paper describes for a first time, the use of single-walled aluminosilicate nanotubes (SWNT) (imogolite) as a one-dimensional template for the in situ growth of mercaptopropionic acid-capped CdTe QDs. This new nanohybrid hydrogel was synthesized by a simple reaction pathway and their enhanced optical properties were monitored by fluorescence and UV–Vis spectroscopy, confirming that the use of these nanotubes favors the confinement effects of net CdTe QDs. In addition, studies of FT-IR spectroscopy and transmission electron microscopy confirmed the non-covalent functionalization of SWNT. Finally, the antimicrobial activity of SWNT coated with CdTe QDs toward three opportunistic multi-resistant pathogens such as Salmonella typhimurium, Acinetobacter baumannii, and Pseudomonas aeruginosa were tested. Growth inhibition tests were conducted by exposing growing bacteria to CdTe QDs/SWNT hybrid compound showing that the new nano-structured composite is a potential antimicrobial agent for heavy metal-resistant bacteria.

Synthesis of CdTe QDs/single-walled aluminosilicate nanotubes hybrid compound and their antimicrobial activity on bacteria

Science.gov (United States)

Geraldo, Daniela A.; Arancibia-Miranda, Nicolás; Villagra, Nicolás A.; Mora, Guido C.; Arratia-Perez, Ramiro

2012-12-01

The use of molecular conjugates of quantum dots (nanocrystalline fluorophores) for biological purposes have received much attention due to their improved biological activity. However, relatively, little is known about the synthesis and application of aluminosilicate nanotubes decorated with quantum dots (QDs) for imaging and treatment of pathogenic bacteria. This paper describes for a first time, the use of single-walled aluminosilicate nanotubes (SWNT) (imogolite) as a one-dimensional template for the in situ growth of mercaptopropionic acid-capped CdTe QDs. This new nanohybrid hydrogel was synthesized by a simple reaction pathway and their enhanced optical properties were monitored by fluorescence and UV-Vis spectroscopy, confirming that the use of these nanotubes favors the confinement effects of net CdTe QDs. In addition, studies of FT-IR spectroscopy and transmission electron microscopy confirmed the non-covalent functionalization of SWNT. Finally, the antimicrobial activity of SWNT coated with CdTe QDs toward three opportunistic multi-resistant pathogens such as Salmonella typhimurium, Acinetobacter baumannii, and Pseudomonas aeruginosa were tested. Growth inhibition tests were conducted by exposing growing bacteria to CdTe QDs/SWNT hybrid compound showing that the new nano-structured composite is a potential antimicrobial agent for heavy metal-resistant bacteria.

Unified Numerical Solver for Device Metastabilities in CdTe Thin-Film PV

Energy Technology Data Exchange (ETDEWEB)

Vasileska, Dragica [Arizona State Univ., Tempe, AZ (United States)

2017-08-17

Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers de-vote significant empirical efforts to study these phenomena and to improve semiconduc-tor device stability. Still, understanding the underlying reasons of these instabilities re-mains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most com-monly alleged causes of metastability in CdTe device, such as “migration of Cu,” have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses sug-gesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe pro-vide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic de-fects; for example, changing the state of an impurity from an interstitial donor to a sub-stitutional acceptor often is accompanied by generation of a compensating intrinsic in-terstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the elec-trical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of

Investigation of Processing, Microstructures and Efficiencies of Polycrystalline CdTe Photovoltaic Films and Devices

Science.gov (United States)

Munshi, Amit Harenkumar

CdTe based photovoltaics have been commercialized at multiple GWs/year level. The performance of CdTe thin film photovoltaic devices is sensitive to process conditions. Variations in deposition temperatures as well as other treatment parameters have a significant impact on film microstructure and device performance. In this work, extensive investigations are carried out using advanced microstructural characterization techniques in an attempt to relate microstructural changes due to varying deposition parameters and their effects on device performance for cadmium telluride based photovoltaic cells deposited using close space sublimation (CSS). The goal of this investigation is to apply advanced material characterization techniques to aid process development for higher efficiency CdTe based photovoltaic devices. Several techniques have been used to observe the morphological changes to the microstructure along with materials and crystallographic changes as a function of deposition temperature and treatment times. Traditional device structures as well as advanced structures with electron reflector and films deposited on Mg1-xZnxO instead of conventional CdS window layer are investigated. These techniques include Scanning Electron Microscopy (SEM) with Electron Back Scattered Diffraction (EBSD) and Energy dispersive X-ray spectroscopy (EDS) to study grain structure and High Resolution Transmission Electron Microscopy (TEM) with electron diffraction and EDS. These investigations have provided insights into the mechanisms that lead to change in film structure and device performance with change in deposition conditions. Energy dispersive X-ray spectroscopy (EDS) is used for chemical mapping of the films as well as to understand interlayer material diffusion between subsequent layers. Electrical performance of these devices has been studied using current density vs voltage plots. Devices with efficiency over 18% have been fabricated on low cost commercial glass substrates

High-resolution brain SPECT imaging by combination of parallel and tilted detector heads.

Science.gov (United States)

Suzuki, Atsuro; Takeuchi, Wataru; Ishitsu, Takafumi; Morimoto, Yuichi; Kobashi, Keiji; Ueno, Yuichiro

2015-10-01

To improve the spatial resolution of brain single-photon emission computed tomography (SPECT), we propose a new brain SPECT system in which the detector heads are tilted towards the rotation axis so that they are closer to the brain. In addition, parallel detector heads are used to obtain the complete projection data set. We evaluated this parallel and tilted detector head system (PT-SPECT) in simulations. In the simulation study, the tilt angle of the detector heads relative to the axis was 45°. The distance from the collimator surface of the parallel detector heads to the axis was 130 mm. The distance from the collimator surface of the tilted detector heads to the origin on the axis was 110 mm. A CdTe semiconductor panel with a 1.4 mm detector pitch and a parallel-hole collimator were employed in both types of detector head. A line source phantom, cold-rod brain-shaped phantom, and cerebral blood flow phantom were evaluated. The projection data were generated by forward-projection of the phantom images using physics models, and Poisson noise at clinical levels was applied to the projection data. The ordered-subsets expectation maximization algorithm with physics models was used. We also evaluated conventional SPECT using four parallel detector heads for the sake of comparison. The evaluation of the line source phantom showed that the transaxial FWHM in the central slice for conventional SPECT ranged from 6.1 to 8.5 mm, while that for PT-SPECT ranged from 5.3 to 6.9 mm. The cold-rod brain-shaped phantom image showed that conventional SPECT could visualize up to 8-mm-diameter rods. By contrast, PT-SPECT could visualize up to 6-mm-diameter rods in upper slices of a cerebrum. The cerebral blood flow phantom image showed that the PT-SPECT system provided higher resolution at the thalamus and caudate nucleus as well as at the longitudinal fissure of the cerebrum compared with conventional SPECT. PT-SPECT provides improved image resolution at not only upper but also at

Effects of CdCl2 treatment on the recrystallization and electro-optical properties of CdTe thin films

International Nuclear Information System (INIS)

Moutinho, H.R.; Al-Jassim, M.M.; Levi, D.H.; Dippo, P.C.; Kazmerski, L.L.

1998-01-01

The effects of CdCl 2 processing on the physical and electro-optical properties of CdTe were evaluated for thin films produced by physical vapor deposition and close-spaced sublimation (CSS). Two substrates (CdS and Indium - tin - oxide) were used with the physical vapor deposition (PVD) films specifically to isolate the effects of the Cd(S x Te 1-x ) alloy formed during the treatment of films deposited on CdS. The samples were analyzed by x-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence. The observed changes in microstructure were caused by recrystallization, which consisted of the nucleation and development of a new CdTe structure and subsequent grain growth. Nevertheless, for these processes to take place, it was necessary that enough lattice-strain energy was available in the films. For this reason, PVD films did recrystallize, while CSS films did not. For the first time, recrystallization was observed directly in AFM images of CdTe films and confirmed by XRD analysis, which indicated the existence of two lattice parameters in PVD samples treated at 350 degree C. For samples treated at 400 degree C, the CdCl 2 treatment improved the minority-carrier lifetime of the films by more than one order of magnitude. This improvement was attributed to the elimination of deep defect levels within the band gap of the CdTe films as a result of the treatment. The sulfur diffusion into CdTe films deposited on CdS, during the CdCl 2 treatment at 400 degree C, strongly affected the defect structure

Spectroscopic study on the doping of polycrystalline CdTe layers for solar cells; Spektroskopische Untersuchungen zur Dotierung von polykristallinen CdTe-Schichten fuer Solarzellen

Energy Technology Data Exchange (ETDEWEB)

Kraft, Christian

2011-11-29

First in the present thesis the fundamental properties of CdTe are described. In the following it is discussed, how a CdTe solar cell is generally constructed, which specialities are to be regarded, and how an improvement of the actually reachable data of such a solar cell in view of the efficiency can be reached fundamentally and in then practical realization. In the third chapter the physical foundations of the most important methods are discussed, which are applied in the framework of this thesis for the analysis of the CdTe layers. The fourth chapter describes the details of the experiments of this thesis. The fifth chapter deals with the analysis of the photoluminescence of CdTe layers. Special attention is put on the analysis of the excitonic luminescence. The sixth chapter treats the implantation of CdTe layers with phosphor. The influence of phosphorus as dopant on the PL spectra of CdTe and the correponding characteristics of implanted solar cells are presented. Also the influence of radiation damages as consequence of the ion implantation is studied in this chapter by means of the analysis of differently thick absorber layers. In the seventh chapter finally a new procedure for the fabrication of solar cells on the base of CdTe as absorber material is introduced, which shall make possible to change the stoichiometry of cadmium mand tellurium specifically and to present additionally a suited material, in order to form the doping of CdTE a solar-cell material variably. The fundamental properties of the new facility are experimentally determined, and first solar cells are fabricated with this facility and analyzed. Also an in-situ doping with phosphorus is thereby performed and the result studied.

Environmental, health and safety issues related to the production and use of CdTe photovoltaic modules

International Nuclear Information System (INIS)

Moskowitz, P.D.

1992-01-01

This paper examines environmental, health and safety issues associated with the production and use of CdTe photovoltaic modules. Handling of Cd and Te in photovoltaic production can present hazards to health, safety and the environment. Prior recognition of these hazards can allow device manufacturers time to implement appropriate hazard management strategies. The most important health hazards are probably related to chronic low-level exposures to Cd, especially to workers in manufacturing facilities. Because of the long latency period associated with the development of health effects arising from such exposures, and the availability of environmental and biomonitoring protocols, such hazards can be monitored and controlled. The true hazard presented by CdTe is very uncertain because characterizations of its inherent biological toxicity are based on extrapolation of data from other Cd compounds. Technical and institutional mechanisms for the recycling of spent CdTe modules may be needed to ensure public acceptance of this material option and to eliminate expensive disposal costs. (author)

Observation of Hg-diffusion in CdTe using heavy ion (40MeV-O5+) backscattering

International Nuclear Information System (INIS)

Otake, H.; Takita, K.; Murakami, K.; Masuda, K.; Kudo, H.; Seki, S.

1984-01-01

Diffusion of Hg in the near-surface region of CdTe crystals was observed by means of 40MeV-O 5+ ion backscattering. CdTe crystals immersed in Hg were kept in furnace at 280 -- 340 0 C for 2 -- 240hours. The backscattering spectra of these crystals were measured. The concentration of the diffused Hg atoms in the surface reached to 4 x 10 20 cm -3 , and Hg distribution was observed up to 1.4 μm from surface. Temperature dependence of the diffusion coefficients was determined as D = 5 x 10 3 exp (-2.0 +- 0.3eV/kT) cm 2 /sec. Hg-diffusion was not observed in the case of CdTe kept in Hg with a small amount of Cd. These facts suggest that Hg diffusion is controlled by the diffusion of Cd-vacancy. A method of observing the Hg-atoms profile in the near-surface region of the semiconductor was established. (author)

Photoinduced interaction between MPA capped CdTe QDs and certain anthraquinone dyes

Energy Technology Data Exchange (ETDEWEB)

Jagadeeswari, S.; Asha Jhonsi, M.; Kathiravan, A. [School of Chemistry, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Renganathan, R., E-mail: rrengas@gmail.co [School of Chemistry, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India)

2011-04-15

Photoinduced interaction of mercapto propionic acid (MPA) capped CdTe quantum dots (QDs) with certain anthraquinone dyes namely alizarin, alizarin red S, acid blue 129 and uniblue has been studied by steady state and time resolved fluorescence measurements. Addition of anthraquinone dyes to CdTe QDs results in the reduction of electron hole recombination has been observed (i.e., fluorescence quenching). The Stern-Volmer constant (K{sub SV}), quenching rate constant (k{sub q}) and association constants (K) were obtained from fluorescence quenching data. The interaction of anthraquinone dyes with QDs occurs through static quenching was confirmed by unaltered fluorescence lifetime. The occurrence of electron transfer quenching mechanism has been proved by the negative free energy change ({Delta}G{sub et}) obtained as per the Rehm-Weller equation.

Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Simonds, Brian J. [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Kheraj, Vipul [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Department of Applied Physics, S. V. National Institute of Technology, Surat 395 007 (India); Palekis, Vasilios; Ferekides, Christos [Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States); Scarpulla, Michael A., E-mail: scarpulla@eng.utah.edu [Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)

2015-06-14

Laser processing of polycrystalline CdTe is a promising approach that could potentially increase module manufacturing throughput while reducing capital expenditure costs. For these benefits to be realized, the basic effects of laser irradiation on CdTe must be ascertained. In this study, we utilize surface photovoltage spectroscopy (SPS) to investigate the changes to the electronic properties of the surface of polycrystalline CdTe solar cell stacks induced by continuous-wave laser annealing. The experimental data explained within a model consisting of two space charge regions, one at the CdTe/air interface and one at the CdTe/CdS junction, are used to interpret our SPS results. The frequency dependence and phase spectra of the SPS signal are also discussed. To support the SPS findings, low-temperature spectrally-resolved photoluminescence and time-resolved photoluminescence were also measured. The data show that a modest laser treatment of 250 W/cm{sup 2} with a dwell time of 20 s is sufficient to reduce the effects of Fermi level pinning at the surface due to surface defects.

Direct Analysis of JV-Curves Applied to an Outdoor-Degrading CdTe Module (Presentation)

Energy Technology Data Exchange (ETDEWEB)

Jordan, D; Kurtz, S.; Ulbrich, C.; Gerber, A.; Rau, U.

2014-03-01

We present the application of a phenomenological four parameter equation to fit and analyze regularly measured current density-voltage JV curves of a CdTe module during 2.5 years of outdoor operation. The parameters are physically meaningful, i.e. the short circuit current density Jsc, open circuit voltage Voc and differential resistances Rsc, and Roc. For the chosen module, the fill factor FF degradation overweighs the degradation of Jsc and Voc. Interestingly, with outdoor exposure, not only the conductance at short circuit, Gsc, increases but also the Gsc(Jsc)-dependence. This is well explained with an increase in voltage dependent charge carrier collection in CdTe.

Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films

Science.gov (United States)

Paulauskas, T.; Buurma, C.; Colegrove, E.; Guo, Z.; Sivananthan, S.; Chan, M. K. Y.; Klie, R. F.

2014-08-01

Poly-crystalline CdTe thin films on glass are used in commercial solar-cell superstrate devices. It is well known that post-deposition annealing of the CdTe thin films in a CdCl2 environment significantly increases the device performance, but a fundamental understanding of the effects of such annealing has not been achieved. In this Letter, we report a change in the stoichiometry across twin boundaries in CdTe and propose that native point defects alone cannot account for this variation. Upon annealing in CdCl2, we find that the stoichiometry is restored. Our experimental measurements using atomic-resolution high-angle annular dark field imaging, electron energy-loss spectroscopy, and energy dispersive X-ray spectroscopy in a scanning transmission electron microscope are supported by first-principles density functional theory calculations.

First ever full size CdTE luminescent down-shifting module

NARCIS (Netherlands)

Ross, D.; Alonso-Alvarez, D.; Fritsche, J.; Bauer, M.; Debije, M.G.; Fifield, R.M.; Richards, B.S.

2012-01-01

For the first time a luminescent down-shifting (LDS) layer has been applied to a full size PV module to improve its short-wavelength response. An average 4.3% relative increase in the short-circuit current density (JSC) was recorded for the Calyxo cadmium telluride (CdTe) modules after the best LDS

Charge-carrier transport and recombination in heteroepitaxial CdTe

International Nuclear Information System (INIS)

Kuciauskas, Darius; Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

2014-01-01

We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm 2 (Vs) −1 and diffusion coefficient D of 17 cm 2  s −1 . We find limiting recombination at the epitaxial film surface (surface recombination velocity S surface  = (2.8 ± 0.3) × 10 5  cm s −1 ) and at the heteroepitaxial interface (interface recombination velocity S interface  = (4.8 ± 0.5) × 10 5  cm s −1 ). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

3D non-destructive fluorescent X-ray computed tomography (FXCT) with a CdTe array

Energy Technology Data Exchange (ETDEWEB)

Yoon, Chang Yeon; Lee, Won Ho; Kim, Young Hak [Dept. of Bio-convergence Engineering, Korea University Graduate School, Seoul (Korea, Republic of)

2015-10-15

In our research, the material was exposed to an X-ray and not only the conventional transmission image but also 3D images based on the information of characteristic X-ray detected by a 2D CdTe planar detector array were reconstructed. Since atoms have their own characteristic X-ray energy, our system was able to discriminate materials of even a same density if the materials were composed of different atomic numbers. We applied FXCT to distinguish various unknown materials with similar densities. The materials with similar densities were clearly distinguished in the 3D reconstructed images based on the information of the detected characteristic X-ray, while they were not discriminated from each other in the images based on the information of the detected transmission X-ray. In the fused images consisting of 3D transmitted and characteristic X-ray images, all of the positions, densities and atomic numbers of materials enclosed in plastic phantom or pipe were clearly identified by analyzing energy, position and amount of detected radiation.

Size-selective precipitation in colloidal semiconductor nanocrystals of CdTe and CdSe: a study by UV-VIS spectroscopy; Precipitacao seletiva de tamanhos em nanoparticulas semicondutoras coloidais de CdTe e CdSe: um estudo por espectroscopia UV-VIS

Energy Technology Data Exchange (ETDEWEB)

Viol, Livia Cristina de Souza; Silva, Fernanda Oliveira; Ferreira, Diego Lourenconi; Alves, Jose Luiz Aarestrup; Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.b [Universidade Federal de Sao Joao del Rei, MG (Brazil). Dept. de Ciencias Naturais

2011-07-01

The post-preparative size-selective precipitation technique was applied in CdTe and CdSe semiconductor nanocrystals prepared via colloidal route in water. The synthesis of CdTe and CdSe nanoparticles and the effect of the post-preparative size-selective precipitation have been characterized mainly by mean of ultraviolet and visible absorption spectroscopy (UV-Vis). It was demonstrated that the size-selective precipitation are able to isolate particles of different sizes and purify the nanoparticles as well. (author)

Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

Energy Technology Data Exchange (ETDEWEB)

Beck, Patrick R. [California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States)

2010-01-07

Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current or leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.

CdTe magic-sized clusters and the use as building blocks for assembling two-dimensional nanoplatelets

Science.gov (United States)

Xu, Hu; Hou, Yumei; Zhang, Hua

2017-06-01

A facile one-pot noninjection synthesis of CdTe magic-sized clusters (MSCs) and their use as building blocks for assembling two-dimensional (2D) quantum confined nanoplatelets (NPLs) are reported. Four distinct MSC families, with the first exciton absorption peaks at 447 nm (F447), 485 nm (F485), 535 nm (F535), and 555 nm (F555), are synthesized by the reaction between cadmium oleate and trioctylphosphine tellurium (TOP-Te) in octadecene media containing primary amine and TOP at appropriate intermediate temperatures. Especially, F447 is obtained in pure form and can self-assemble in situ into 2D NPLs in the reaction solution. The formation, growth, and transformation of CdTe MSCs are monitored mainly by UV-Vis absorption spectroscopy. The pure F447 and its assembled 2D NPLs are further characterized using transmission electron microscopy. The influence of various experimental variables, including reaction temperature, the nature, and amount of capping ligands, on the stability and growth kinetics of the obtained MSC families has been systematically investigated. Experimental results indicate that the appropriate reaction temperature and the presence of long hydrocarbon chain primary amines play a crucial role in the formation of MSCs and the subsequent assembly into 2D NPLs. Primary amines can also promote ultra-small sized CdTe regular nanocrystals to transform into MSCs, and therefore, CdTe MSCs can be obtained indirectly from regularly sized nanocrystals. [Figure not available: see fulltext.

In situ observation of morphological change in CdTe nano- and submicron wires

Energy Technology Data Exchange (ETDEWEB)

Davami, Keivan; Lee, Jeong-Soo; Meyyappan, M [Division of IT Convergence Engineering, Pohang University of Science and Technology, Pohang (Korea, Republic of); Ghassemi, Hessam M; Yassar, Reza S [Department of Mechanical Engineering, Michigan Technological University, Houghton, MI 49931 (United States); Sun, Xuhui, E-mail: ljs6951@postech.ac.kr, E-mail: m.meyyappan@nasa.gov [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

2011-10-28

We report growth and characterization of CdTe wires 30-400 nm in diameter by the vapor-liquid-solid technique. Individual nanowires were placed on a movable piezotube, which allowed three-dimensional motion toward a scanning tunneling microscope (STM). A bias was applied to the STM tip in contact with the nanowire, and the morphological changes due to Joule heating were observed in situ using a transmission electron microscope (TEM) in real time. For thick CdTe wires (d > {approx} 150 nm), the process results in the growth of superfine nanowires (SFNWs) of 2-4 nm diameter on the surface of the wire. Smaller diameter nanowires, in contrast, disintegrate under the applied bias before the complete evolution of SFNWs on the surface.

Growth and optical properties of CdTe quantum dots in ZnTe nanowires

Energy Technology Data Exchange (ETDEWEB)

Wojnar, Piotr; Janik, Elzbieta; Baczewski, Lech T.; Kret, Slawomir; Karczewski, G.; Wojtowicz, Tomasz [Institute of Physics, Polish Academy of Sciences, Al Lotnikow 32/46, 02-668 Warsaw (Poland); Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr [Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul Hoza 69, 00-681 Warsaw (Poland)

2011-09-12

We report on the formation of optically active CdTe quantum dots in ZnTe nanowires. The CdTe/ZnTe nanostructures have been grown by a gold nanocatalyst assisted molecular beam epitaxy in a vapor-liquid solid growth process. The presence of CdTe insertions in ZnTe nanowire results in the appearance of a strong photoluminescence band in the 2.0 eV-2.25 eV energy range. Spatially resolved photoluminescence measurements reveal that this broad emission consists of several sharp lines with the spectral width of about 2 meV. The large degree of linear polarization of these individual emission lines confirms their nanowire origin, whereas the zero-dimensional confinement is proved by photon correlation spectroscopy.

Cascaded systems analysis of charge sharing in cadmium telluride photon-counting x-ray detectors.

Science.gov (United States)

Tanguay, Jesse; Cunningham, Ian A

2018-05-01

Single-photon-counting (SPC) and spectroscopic x-ray detectors are under development in academic and industry laboratories for medical imaging applications. The spatial resolution of SPC and spectroscopic x-ray detectors is an important design criterion. The purpose of this article was to extend the cascaded systems approach to include a description of the spatial resolution of SPC and spectroscopic x-ray imaging detectors. A cascaded systems approach was used to model reabsorption of characteristic x rays, Coulomb repulsion, and diffusion in SPC and spectroscopic x-ray detectors. In addition to reabsorption, diffusion, and Coulomb repulsion, the model accounted for x-ray conversion to electron-hole (e-h) pairs, integration of e-h pairs in detector elements, electronic noise, and energy thresholding. The probability density function (PDF) describing the number of e-h pairs was propagated through each stage of the model and was used to derive new theoretical expressions for the large-area gain and modulation transfer function (MTF) of CdTe SPC x-ray detectors, and the energy bin sensitivity functions and MTFs of CdTe spectroscopic detectors. Theoretical predictions were compared with the results of MATLAB-based Monte Carlo (MC) simulations and published data. Comparisons were also made with the MTF of energy-integrating systems. Under general radiographic conditions, reabsorption, diffusion, and Coulomb repulsion together artificially inflate count rates by 20% to 50%. For thicker converters (e.g. 1000 μm) and larger detector elements (e.g. 500 μm pixel pitch) these processes result in modest inflation (i.e. ∼10%) in apparent count rates. Our theoretical and MC analyses predict that SPC MTFs will be degraded relative to those of energy-integrating systems for fluoroscopic, general radiographic, and CT imaging conditions. In most cases, this degradation is modest (i.e., ∼10% at the Nyquist frequency). However, for thicker converters, the SPC MTF can be degraded

Energy Band Gap, Intrinsic Carrier Concentration and Fermi Level of CdTe Bulk Crystal between 304 K and 1067 K

Science.gov (United States)

Su, Ching-Hua

2007-01-01

Optical transmission measurements were performed on CdTe bulk single crystal. It was found that when a sliced and polished CdTe wafer was used, a white film started to develop when the sample was heated above 530 K and the sample became opaque. Therefore, a bulk crystal of CdTe was first grown in the window area by physical vapor transport; the optical transmission was then measured and from which the energy band gap was derived between 304 and 1067 K. The band gaps of CdTe can be fit well as a function of temperature using the Varshini expression: Eg (e V) = 1.5860 - 5.9117xl0(exp -4) T(sup 2)/(T + 160). Using the band gap data, the high temperature electron-hole equilibrium was calculated numerically by assuming the Kane's conduction band structure and a heavy-hole parabolic valance band. The calculated intrinsic carrier concentrations agree well with the experimental data reported previously. The calculated intrinsic Fermi levels between 270 and 1200 K were also presented.

Defect characterization of CdTe thin films using a slow positron beam

International Nuclear Information System (INIS)

Neretina, S.; Grebennikov, D.; Mascher, P.; Hughes, R.A.; Weber, M.; Lynn, K.G.; Simpson, P.J.; Preston, J.S.

2007-01-01

Cadmium Telluride (CdTe) is the most well established II-VI compound largely due to its use as a photonic material. Existing applications, as well as those under consideration, are demanding increasingly stringent control of the material properties. The deposition of high quality thin films is of the utmost importance to such applications. In this regard, we present a report detailing the role of lattice mismatch in determining the film quality. Thin films were deposited on a wide variety of substrate materials using the pulsed laser deposition technique. Common to all substrates was the strong tendency towards the preferential alignment of CdTe's (111) planes parallel to the substrate's surface. X-ray diffraction analysis, however, revealed that the crystalline quality varied dramatically depending upon the substrate used with the best results yielding a single crystal film. This tendency also manifested itself in the surface morphology with higher structural perfection yielding smoother surfaces. Slow positron beam techniques revealed a strong correlation between the defect concentration and the degree of structural perfection. Simulations of the data using the POSTRAP 5 program were used to calculate the defect concentration in relative (atom -1 ) and absolute units and to determine the diffusion lengths of the positrons in the film. All of these characterization techniques point towards lattice mismatch as being the dominant mechanism in determining the quality of CdTe films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A New Approach for Evaluating Charge Transport Properties of Semiconductor Detectors

International Nuclear Information System (INIS)

Kim, Kyung O; Kim, Jong Kyung; Kim, Soon Young; Ha, Jang Ho

2009-01-01

The semiconductor detectors (e.g., CdTe, CdZnTe, and HgI 2 ) have been widely used for radiation detection and medical imaging because of its various outstanding features such as excellent energy resolution, wide bandgap energy, room temperature operation, and so on. Unfortunately, the performance of these detectors is mainly limited by the charge transport properties of semiconductor, especially the mobility-lifetime products (i.e., (μτ) e and ((μτ) h ). Hence, the analysis on the mobility-lifetime products is very important for evaluating correct characteristics of semiconductor detectors. A commonly used method to analyze the mobilitylifetime products is based on their responses to α particle. However, the α particle method cannot evaluate the ((μτ)h product in many cases, because a semiconductor detector operating at positive bias voltages often yields the energy spectrum without the peaks. This method is also known to be very sensitive to the experimental conditions as well as surface conditions of the detector. In this study, a new approach with gamma-ray instead of α particle was carried out to solve the determination difficulty of the ((μτ) h product with common method. The special relation between the two mobility-lifetime products, which we call the 'Nural equation', was also developed to simply obtain each parameter based on Hecht equation

Density functional theory calculations establish the experimental evidence of the DX center atomic structure in CdTe.

Science.gov (United States)

Lany, Stephan; Wolf, Herbert; Wichert, Thomas

2004-06-04

The In DX center and the DX-like configuration of the Cd host atom in CdTe are investigated using density functional theory. The simultaneous calculation of the atomic structure and the electric field gradient (EFG) allows one to correlate the theoretically predicted structure of the DX center with an experimental observable, namely, the EFG obtained from radioactive 111In/111Cd probe atoms in In doped CdTe. In this way, the experimental identification of the DX center structure is established.

Preliminary evaluation of a novel energy-resolved photon-counting gamma ray detector.

Science.gov (United States)

Meng, L-J; Tan, J W; Spartiotis, K; Schulman, T

2009-06-11

In this paper, we present the design and preliminary performance evaluation of a novel energy-resolved photon-counting (ERPC) detector for gamma ray imaging applications. The prototype ERPC detector has an active area of 4.4 cm × 4.4 cm, which is pixelated into 128 × 128 square pixels with a pitch size of 350 µm × 350µm. The current detector consists of multiple detector hybrids, each with a CdTe crystal of 1.1 cm × 2.2 cm × 1 mm, bump-bonded onto a custom-designed application-specific integrated circuit (ASIC). The ERPC ASIC has 2048 readout channels arranged in a 32 × 64 array. Each channel is equipped with pre- and shaping-amplifiers, a discriminator, peak/hold circuitry and an analog-to-digital converter (ADC) for digitizing the signal amplitude. In order to compensate for the pixel-to-pixel variation, two 8-bit digital-to-analog converters (DACs) are implemented into each channel for tuning the gain and offset. The ERPC detector is designed to offer a high spatial resolution, a wide dynamic range of 12-200 keV and a good energy resolution of 3-4 keV. The hybrid detector configuration provides a flexible detection area that can be easily tailored for different imaging applications. The intrinsic performance of a prototype ERPC detector was evaluated with various gamma ray sources, and the results are presented.

Improved electron density through hetero-junction binary sensitized TiO2/ CdTe / D719 system as photoanode for dye sensitized solar cell

Science.gov (United States)

Pandey, A. K.; Ahmad, Muhammad Shakeel; Alizadeh, Mahdi; Rahim, Nasrudin Abd

2018-07-01

The combined effect of dual sensitization and hetero-junction symmetry has been investigated on the performance of TiO2 based dye sensitized solar cell. CdTe nanoparticles have been introduced in TiO2 matrix to function as sensitizer as well as act as hetero-junction between D719 dye and TiO2 nanoarchitecture. Four concentrations of CdTe i.e. 0.5 wt%, 2 wt%, 5 wt% and 8 wt% have been investigated. Morphological and compositional studies have been conducted using scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. Light absorption characteristics have been investigated by employing Uv-vis spectroscopy and the overall performance has been studied using solar simulator and electrochemical impedance spectroscopy (EIS). Performance has been found to be increased with the addition of CdTe due to high electron density and reduction in recombination reactions. An increase of 41.73% in incident photo conversion efficiency (IPCE) and 75.57% in short circuit current density (Jsc) have been recorded for the specimens containing 5 wt% CdTe compared to bare TiO2 based DSSCs. Further addition of CdTe leads to reduction in overall performance of DSSCs.

Prospects of In/CdTe X- and γ-ray detectors with MoO Ohmic contacts

Science.gov (United States)

Maslyanchuk, Olena L.; Solovan, Mykhailo M.; Maistruk, Eduard V.; Brus, Viktor V.; Maryanchuk, Pavlo D.; Gnatyuk, Volodymyr A.; Aoki, Toru

2018-01-01

The present paper analyzes the charge transport mechanisms and spectrometric properties of In/CdTe/MoOx heterojunctions prepared by magnetron sputtering of indium and molybdenum oxide thin films onto semi-insulating p-type single-crystal CdTe semiconductor, produced by Acrorad Co. Ltd. Current-voltage characteristics of the detectors at different temperatures were investigated. The charge transport mechanisms in the heterostructures under investigation were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and the space charge limited currents at high voltages. The spectra of 137Cs and 241Am isotopes taken at different applied bias voltages are presented. It is shown that the In/CdTe/MoOx structures can be used as X/γ-ray detectors in the spectrometric mode.

Novel Approach to Front Contact Passivation for CdTe Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Kephart, Jason

2018-02-18

The goal of this project was to study the use of sputter-deposited oxide materials for interface passivation of CdTe-based photovoltaics. Several candidate materials were chosen based on their promise in passivating the CdTe and CdSeTe semiconductor interface, chemical and thermal stability to device processing, and ability to be deposited by sputter deposition.

Extracellular biosynthesis of CdTe quantum dots by the fungus Fusarium oxysporum and their anti-bacterial activity

Science.gov (United States)

Syed, Asad; Ahmad, Absar

2013-04-01

The growing demand for semiconductor [quantum dots (Q-dots)] nanoparticles has fuelled significant research in developing strategies for their synthesis and characterization. They are extensively investigated by the chemical route; on the other hand, use of microbial sources for biosynthesis witnessed the highly stable, water dispersible nanoparticles formation. Here we report, for the first time, an efficient fungal-mediated synthesis of highly fluorescent CdTe quantum dots at ambient conditions by the fungus Fusarium oxysporum when reacted with a mixture of CdCl2 and TeCl4. Characterization of these biosynthesized nanoparticles was carried out by different techniques such as Ultraviolet-visible (UV-Vis) spectroscopy, Photoluminescence (PL), X-ray Diffraction (XRD), X-ray Photoelectron spectroscopy (XPS), Transmission Electron Microscopy (TEM) and Fourier Transformed Infrared Spectroscopy (FTIR) analysis. CdTe nanoparticles shows antibacterial activity against Gram positive and Gram negative bacteria. The fungal based fabrication provides an economical, green chemistry approach for production of highly fluorescent CdTe quantum dots.

Electrical characterization of CdTe grain-boundary properties from as processed CdTe/CdS solar cells

Energy Technology Data Exchange (ETDEWEB)

Woods, L.M.; Robinson, G.Y. [Colorado State Univ., Fort Collins, CO (United States); Levi, D.H.; Ahrenkiel, R.K. [National Renewable Energy Lab., Golden, CO (United States); Kaydanov, V. [Colorado School of Mines, Golden, CO (United States)

1998-09-01

An ability to liftoff or separate the thin-film polycrystalline CdTe from the CdS, without the use of chemical etches, has enabled direct electrical characterization of the as-processed CdTe near the CdTe/CdS heterointerface. The authors use this ability to understand how a back-contact, nitric-phosphoric (NP) etch affects the grain boundaries throughout the film. Quantitative determination of the grain-boundary barrier potentials and estimates of doping density near the grain perimeter are determined from theoretical fits to measurements of the current vs. temperature. Estimates of the bulk doping are determined from high-frequency resistivity measurements. The light and dark barrier potentials change after the NP etch, and the origin of this change is postulated. Also, a variable doping density within the grains of non-etched material has been determined. These results allow a semi-quantitative grain-boundary band diagram to be drawn that should aid in determining more accurate two-dimensional models for polycrystalline CdTe solar cells.

First-principles-based analysis of the influence of Cu on CdTe electronic properties

International Nuclear Information System (INIS)

Krasikov, D.; Knizhnik, A.; Potapkin, B.; Selezneva, S.; Sommerer, T.

2013-01-01

The maximum voltage of CdTe solar cells is limited by low majority carrier concentration and doping difficulty. Copper that enters from the back contact can form both donors and acceptors in CdTe. It is empirically known that the free carrier concentration is several orders lower than the total Cu concentration. Simplified thermodynamic models of defect compensation after Cu introduction can be found in literature. We present a first-principles-based analysis of kinetics of defect formation upon Cu introduction, and show that Cu i is mobile at room temperature. Calculations of properties of Cu i –V Cd and Cu i –Cu Cd complexes show that the neutral Cu i –Cu Cd complex is mobile at elevated temperatures, while formation of the V Cd –Cu i complex is unlikely because it transforms into the Cu Cd defect. - Highlights: ► First-principles calculations of copper defects in CdTe are performed. ► Formation of Cd vacancy + Cu interstitial(Cu i ) complex is unlikely. ► Cu i defect is mobile at room temperature. ► Cu i + Cu on Cd-site (Cu Cd ) complex is mobile at elevated temperature. ► Cu Cd defect forms by kicking-out of the regular lattice Cd by Cu i

Health, safety and environmental risks from the operation of CdTe and CIS thin-film modules

International Nuclear Information System (INIS)

Steinberger, Hartmut

1998-01-01

This paper identifies the materials embedded in on a type of CIS (Copper indium diselenide) and four different types of CdTe (cadmium telluride) thin-film modules. It refers to the results of our outdoor leaching experiments on photovoltaic (PV) samples broken into small fragments. Estimations for modules accidents on the roof or in the garden of a residential house, e.g. leaching of hazardous materials into water or soil, are given. The outcomes of our estimations show some module materials released into water or oil during leaching accidents. In a worst-case scenario for CdTe modules the leached cadmium concentration in the collected water is estimated to be no higher than the German drinking water limit concentration. For the CIS module scenario the estimated leached element concentrations are about one to two orders of magnitude below the German drinking water limit concentration. For broken CIS and CdTe modules on the ground no critical increase of the natural element concentration is observed after leaching into the soil for 1 year. (Author)

Investigation of bearing inner ring-cage thermal characteristics based on CdTe quantum dots fluorescence thermometry

International Nuclear Information System (INIS)

Yan, Ke; Yan, Bei; Li, Ben Q.; Hong, Jun

2017-01-01

Highlights: • A novel method for bearing inner ring/cage thermal monitoring was first presented. • Temperature rise of bearing inner ring in real work condition was obtained. • The rotation speed (6000 r/min) measured here is much higher than all the existing methods. - Abstract: A novel wireless temperature sensor and non-intrusive temperature measurement method for bearing monitoring were proposed in this paper, based on spectrum parameter analysis of CdTe quantum dots films. The CdTe QDs were synthesized and were used in constructing of a sensor film by means of Layer-by-layer Electrostatic Self-assembly method. The fluorescence spectrum properties of the sensor were characterized. At rotation speed 5000–6000 r/min, bearing cage and inner ring temperature were presented first in this paper by the CdTe QDs sensor. The results were verified by theoretical analysis and by thermocouples, with an error typically below 10% or smaller. Compared to the traditional outer ring monitoring, the measurement and monitoring of bearing rolling elements is of very importance, especially at high rotation speed.

Identification of Ag-acceptors in $^{111}Ag^{111}Cd$ doped ZnTe and CdTe

CERN Document Server

Hamann, J; Deicher, M; Filz, T; Lany, S; Ostheimer, V; Strasser, F; Wolf, H; Wichert, T

2000-01-01

Nominally undoped ZnTe and CdTe crystals were implanted with radioactive /sup 111/Ag, which decays to /sup 111/Cd, and investigated by photoluminescence spectroscopy (PL). In ZnTe, the PL lines caused by an acceptor level at 121 meV are observed: the principal bound exciton (PBE) line, the donor-acceptor pair (DAP) band, and the two-hole transition lines. In CdTe, the PBE line and the DAP band that correspond to an acceptor level at 108 meV appear. Since the intensities of all these PL lines decrease in good agreement with the half-life of /sup 111/Ag of 178.8 h, both acceptor levels are concluded to be associated with defects containing a single Ag atom. Therefore, the earlier assignments to substitutional Ag on Zn- and Cd-lattice sites in the respective II-VI semiconductors are confirmed. The assignments in the literature of the S/sub 1/, S /sub 2/, and S/sub 3/ lines in ZnTe and the X/sub 1//sup Ag/, X/sub 2 //sup Ag//C/sub 1//sup Ag/, and C/sub 2//sup Ag/ lines in CdTe to Ag- related defect complexes are ...

Leakage current measurements on pixelated CdZnTe detectors

International Nuclear Information System (INIS)

Dirks, B.P.F.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

2006-01-01

In the field of the R and D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9x0.9 mm 2 ) or 256 (0.5x0.5 mm 2 ) pixels, surrounded by a guard ring and operate in the energy ranging from several keV to 1 MeV, at temperatures between -20 and +20 o C. A critical parameter in the characterisation of these detectors is the leakage current per pixel under polarisation (∼50-500 V/mm). In operation mode each pixel will be read-out by an integrated spectroscopy channel of the multi-channel IDeF-X ASIC currently developed in our lab. The design and functionality of the ASIC depends directly on the direction and value of the current. A dedicated and highly insulating electronics circuit is designed to automatically measure the current in each individual pixel, which is in the order of tens of pico-amperes. Leakage current maps of different CdZnTe detectors of 2 and 6 mm thick and at various temperatures are presented and discussed. Defect density diagnostics have been performed by calculation of the activation energy of the material

Study and optimisation of the high energy detector in Cd(Zn)Te of the Simbol-X space mission for X and gamma astronomy; Etude et optimisation du plan de detection de haute energie en Cd(Zn)Te pour la mission spatiale d'observation astronomie X et gamma SIMBOL-X

Energy Technology Data Exchange (ETDEWEB)

Meuris, A.

2009-09-15

Stars in final phases of evolution are sites of highest energetic phenomena of the Universe. The understanding of their mechanisms is based on the observation of the X and gamma rays from the sources. The Simbol-X French-Italian project is a novel concept of telescope with two satellites flying in formation. This space mission combines upgraded optics from X-ray telescopes with detection Systems from gamma-ray telescopes. CEA Saclay involved in major space missions for gamma astronomy is in charge of the definition and the design of the High Energy Detector (HED) of Simbol-X to cover the spectral range from 8 to 80 keV. Two generations of micro-cameras called Caliste have been designed, fabricated and tested. They integrate cadmium telluride (CdTe) crystals and optimised front-end electronics named Idef-X. The hybridization technique enables to put them side by side as a mosaic to achieve for the first time a CdTe detection plane with fine spatial resolution (600 {mu}m) and arbitrarily large surface. By setting up test benches and leading test campaigns, I was involved in the fabrication of Caliste prototypes and I assessed temporal, spatial and spectral resolutions. At the conclusion of experiments and simulations, I propose a detector type, operating conditions and digital processing on board the spacecraft to optimise HED performance. The best detector candidate is CdTe Schottky, well suited to high resolution spectroscopy; however, it suffers from lost in stability during biasing. Beyond Simbol-X mission, I studied theoretically and experimentally this kind of detector to build an updated model that can apply to other projects of gamma spectroscopy and imaging. (author)

Synthesis of molecularly imprinted silica nanospheres embedded mercaptosuccinic acid-coated CdTe quantum dots for selective recognition of λ-cyhalothrin

Energy Technology Data Exchange (ETDEWEB)

Wei, Xiao [School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China); Meng, Minjia; Song, Zhilong; Gao, Lin; Li, Hongji [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China); Dai, Jiangdong; Zhou, Zhiping [School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Li, Chunxiang, E-mail: weixiaokeyan@163.com [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China); Pan, Jianming; Yu, Ping; Yan, Yongsheng [School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013 (China)

2014-09-15

In this study, a simple procedure for the determination of λ-cyhalothrin was reported. CdTe quantum dots (QDs) capped by molecularly imprinted polymers (MIPs) were prepared and characterized by spectrofluorometer, Fourier transform infrared spectroscopy (FTIR), transmission electron microscope (TEM) and scanning electron microscope (SEM). Mercaptosuccinic acid (MSA) was chosen as a stabilizer for CdTe QDs synthesis. The MSA stabilizer which comprises both thioglycolic acid (TGA)-like and 3-mercaptopropionic acid (MPA)-like moieties could accelerate the whole growth process of CdTe QDs comparing with TGA-like or MPA-like stabilizer. Meanwhile, the spectrofluorometer was used to evaluate the optical stability, effect of pH, and selective and sensitive determination of λ-cyhalothrin (LC). Moreover, LC could quench the fluorescence of the molecularly imprinted silica nanospheres (CdTe@SiO{sub 2}@MIPs) in a concentration-dependent manner, which was best described by a Stern–Volmer-type equation. - Highlights: • We choose Mercaptosuccinic acid (MSA) as the stabilizer for CdTe QDs synthesis. • The composite materials were prepared by the reverse microemulsion method. • The composite materials can be used for the direct analysis of relevant real samples.

A facile single injection Hydrothermal method for the synthesis of thiol capped CdTe Quantum dots as light harvesters

Energy Technology Data Exchange (ETDEWEB)

Jai Kumar, B.; Sumanth Kumar, D.; Mahesh, H.M., E-mail: hm_mahesh@rediffmail.com

2016-10-15

A facile, Single Injection Hydrothermal (SIH) method has been developed to synthesize high quality 3-Mercaptopropionic Acid (MPA) stabilized aqueous CdTe QDs, entirely in ambient environment. The synthesis protocol eliminates the use of inert atmosphere for reducing elemental Tellurium powder to Te precursor avoiding the oxidation of Te powder. The XRD result revealed that the synthesized QDs are in cubic zincblende type crystalline structure, without signature of Te oxidation. FTIR spectra have confirmed the attachment of short chained organic compound MPA to the surface of QDs by covalent bond. The Quantum confinement effect was clearly evident by shift in Longitudinal Optic (LO) peak of Raman spectra and absorption peak wavelength with respect to bulk CdTe materials. The optical direct band gap energy of CdTe QDs is between 3.63 eV to 1.96 eV and QDs size below 6 nm, confirm the QDs are well under strong Quantum confinement regime. Also, photoluminescence spectra depict a stable and high luminescence emission from green to dark red color. All these results corroborate that the synthesis of CdTe QDs procedure is very advantageous and present a simple, economical and easily up scalable method for large scale production.

Magnetic circular dichroism of CdTe nanoparticles

Science.gov (United States)

Malakhovskii, A. V.; Sokolov, A. E.; Tsipotan, A. S.; Zharkov, S. M.; Zabluda, V. N.

2018-04-01

Magnetic circular dichroism (MCD) of water-soluble CdTe nanoparticles was observed in the visible spectral range for the first time. Diameter of nanoparticles varied from 2.3 to 4.5 nm. Absorption and photoluminescence spectra were also recorded. Absorption line at 19400 cm-1 and luminescent line at 18200 cm-1 were observed. Splitting of value 960 cm-1 was revealed in the MCD spectrum. Approximately the same splitting was extracted from the absorption spectrum. The MCD was identified as the temperature independent paramagnetic mixing effect. Nature of the absorption line and of its splitting are discussed.

Structure of CdTe nanoparticles in glass

Science.gov (United States)

Hayes, T. M.; Nagpal, Swati; Persans, P. D.

2000-03-01

Optical long-pass wavelength filters are generally made by growing small crystallites of appropriate semiconductors in a transparent glass matrix. Depending on the semiconductor, these systems are candidates for interesting and important nonlinear optical switching applications. The structure of these nanocrystals has been shown to be a valuable indicator of the chemical and thermodynamic processes during crystallite growth and dissolution. We have used x-ray absorption spectroscopy to study the structure of the crystallites produced during heat treatment of filter glasses containing Cd and Te and producing optical absorption edges at the band gap of bulk CdTe. The results will be discussed.

Quantitative analysis of impurities present in the trace state in CdTe

International Nuclear Information System (INIS)

Al-Neami, A.

1988-01-01

Impurities in CdTe have been analyzed by PIXE using 3 MeV protons and by 1 MeV Ar ion induced X-ray emission. In the case of PIXE elements with Z > 25 are detected whereas with Ar ions only elements with 13 [fr

Synthesis of Colloidal Quantum Dots Coated with Mercaptosuccinic Acid for Early Detection and Therapeutics of Oral Cancers

Science.gov (United States)

Jocelin, G.; Arivarasan, A.; Ganesan, M.; Prasad, N. Rajendra; Sasikala, G.

2016-04-01

Quantum dots (QDs) are gaining widespread recognition for its luminescence behavior and unique photo physical properties as a bio-marker and inorganic fluorophore. In spite of such rampant advantages, its application is clinically hampered depending on the surface coating decreasing its luminescence efficiency. The present study reports preparation of CdTe QDs capped with biologically active thiol based material, mercaptosuccinic acid (MSA) for diagnosis of oral cancer (KB) cells by acting as a fluorophore marking targeted tumor cells and at the same time exhibiting certain cytotoxic effects. Synthesized MSA coated CdTe QDs is spherical in shape with an average particle size of 3-5nm. In vitro, the rapid uptake of MSA CdTe QDs in oral cancer cell lines were assessed through fluorescence microscopy. Further, this study evaluates the therapeutic efficiency of MSA CdTe QDs in human oral cancer cell lines using MTT analysis. MSA CdTe QDs exhibit significant cytotoxicity in oral cancer cells in a dose dependent manner with low IC50 when compared with other raw CdTe QDs. MSA CdTe QDs were also treated with human lymphocytes (normal cells) to assess and compare the toxicity profile of QDs in normal and oral tumors. The results of our present study strengthen our hypothesis of using MSA CdTe QDs as detector for tracking and fluorescence imaging of oral cancer cells and exhibiting sufficient cytotoxicity in them.

Removal of CdTe in acidic media by magnetic ion-exchange resin: A potential recycling methodology for cadmium telluride photovoltaic waste

Energy Technology Data Exchange (ETDEWEB)

Zhang, Teng, E-mail: zhangteng@mail.iee.ac.cn; Dong, Zebin; Qu, Fei; Ding, Fazhu; Peng, Xingyu; Wang, Hongyan; Gu, Hongwei

2014-08-30

Highlights: • Sulfonated magnetic microsphere was prepared as one strong acid cation-exchange resin. • Cd and Te can be removed directly from the highly acidic leaching solution of CdTe. • Good chemical stability, fast adsorbing rate and quick magnetic separation in strong acidic media. • A potential path for recycling CdTe photovoltaic waste. - Abstract: Sulfonated magnetic microspheres (PSt-DVB-SNa MPs) have been successfully prepared as adsorbents via an aqueous suspension polymerization of styrene-divinylbenzene and a sulfonation reaction successively. The resulting adsorbents were confirmed by means of Fourier transform infrared spectra (FT-IR), X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope equipped with an energy dispersive spectrometer (SEM-EDS) and vibrating sample magnetometer (VSM). The leaching process of CdTe was optimized, and the removal efficiency of Cd and Te from the leaching solution was investigated. The adsorbents could directly remove all cations of Cd and Te from a highly acidic leaching solution of CdTe. The adsorption process for Cd and Te reached equilibrium in a few minutes and this process highly depended on the dosage of adsorbents and the affinity of sulfonate groups with cations. Because of its good adsorption capacity in strong acidic media, high adsorbing rate, and efficient magnetic separation from the solution, PSt-DVB-SNa MPs is expected to be an ideal material for the recycling of CdTe photovoltaic waste.

Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

Directory of Open Access Journals (Sweden)

Imyhamy M. Dharmadasa

2017-01-01

Full Text Available Electrodeposition of CdTe thin films was carried out from the late 1970s using the cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers grown from cadmium sulphate precursor. In addition, this research program has been exploring the ways of eliminating the reference electrode, since this is a possible source of detrimental impurities, such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe layers grown by three-electrode (3E and two-electrode (2E systems for their material properties and performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical techniques for their structural, morphological, optical and electrical properties. These layers have also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried out to date produced comparable and superior devices fabricated from materials grown using 2E system.

ABC transporters affect the elimination and toxicity of CdTe quantum dots in liver and kidney cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Mingli; Yin, Huancai; Bai, Pengli [CAS Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou, Jiangsu 215163 (China); Miao, Peng [CAS Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou, Jiangsu 215163 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Deng, Xudong [Department of Chemical Engineering, McMaster University, Hamilton, Ontario, L8S 4L7 (Canada); Xu, Yingxue [CAS Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou, Jiangsu 215163 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Hu, Jun [CAS Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou, Jiangsu 215163 (China); Yin, Jian, E-mail: yinj@sibet.ac.cn [CAS Key Lab of Bio-Medical Diagnostics, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou, Jiangsu 215163 (China)

2016-07-15

This paper aimed to investigate the role of adenosine triphosphate-binding cassette (ABC) transporters on the efflux and the toxicity of nanoparticles in liver and kidney cells. In this study, we synthesized CdTe quantum dots (QDs) that were monodispersed and emitted green fluorescence (maximum peak at 530 nm). Such QDs tended to accumulate in human hepatocellular carcinoma cells (HepG2), human kidney cells 2 (HK-2), and Madin-Darby canine kidney (MDCK) cells, and cause significant toxicity in all the three cell lines. Using specific inhibitors and inducers of P-glycoprotein (Pgp) and multidrug resistance associated proteins (Mrps), the cellular accumulation and subsequent toxicity of QDs in HepG2 and HK-2 cells were significantly affected, while only slight changes appeared in MDCK cells, corresponding well with the functional expressions of ABC transporters in cells. Moreover, treatment of QDs caused concentration- and time- dependent induction of ABC transporters in HepG2 and HK-2 cells, but such phenomenon was barely found in MDCK cells. Furthermore, the effects of CdTe QDs on ABC transporters were found to be greater than those of CdCl{sub 2} at equivalent concentrations of cadmium, indicating that the effects of QDs should be a combination of free Cd{sup 2+} and specific properties of QDs. Overall, these results indicated a strong dependence between the functional expressions of ABC transporters and the efflux of QDs, which could be an important reason for the modulation of QDs toxicity by ABC transporters. - Highlights: • ABC transporters contributed actively to the cellular efflux of CdTe quantum dots. • ABC transporters affected the cellular toxicity of CdTe quantum dots. • Treatment of CdTe quantum dots induced the gene expression of ABC transporters. • Free Cd{sup 2+} should be partially involved in the effects of QDs on ABC transporters. • Cellular efflux of quantum dots could be an important modulator for its toxicity.

Development of an integrated response generator for Si/CdTe semiconductor Compton cameras

International Nuclear Information System (INIS)

Odaka, Hirokazu; Sugimoto, Soichiro; Ishikawa, Shin-nosuke; Katsuta, Junichiro; Koseki, Yuu; Fukuyama, Taro; Saito, Shinya; Sato, Rie; Sato, Goro; Watanabe, Shin

2010-01-01

We have developed an integrated response generator based on Monte Carlo simulation for Compton cameras composed of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. In order to construct an accurate detector response function, the simulation is required to include a comprehensive treatment of the semiconductor detector devices and the data processing system in addition to simulating particle tracking. Although CdTe is an excellent semiconductor material for detection of soft gamma rays, its ineffective charge transport property distorts its spectral response. We investigated the response of CdTe pad detectors in the simulation and present our initial results here. We also performed the full simulation of prototypes of Si/CdTe semiconductor Compton cameras and report on the reproducibility of detection efficiencies and angular resolutions of the cameras, both of which are essential performance parameters of astrophysical instruments.

An optimized multilayer structure of CdS layer for CdTe solar cells application

International Nuclear Information System (INIS)

Han Junfeng; Liao Cheng; Jiang Tao; Spanheimer, C.; Haindl, G.; Fu, Ganhua; Krishnakumar, V.; Zhao Kui; Klein, A.; Jaegermann, W.

2011-01-01

Research highlights: → Two different methods to prepare CdS films for CdTe solar cells. → A new multilayer structure of window layer for the CdTe solar cell. → Thinner CdS window layer for the solar cell than the standard CdS layer. → Higher performance of solar cells based on the new multilayer structure. - Abstract: CdS layers grown by 'dry' (close space sublimation) and 'wet' (chemical bath deposition) methods are deposited and analyzed. CdS prepared with close space sublimation (CSS) has better crystal quality, electrical and optical properties than that prepared with chemical bath deposition (CBD). The performance of CdTe solar cell based on the CSS CdS layer has higher efficiency than that based on CBD CdS layer. However, the CSS CdS suffers from the pinholes. And consequently it is necessary to prepare a 150 nm thin film for CdTe/CdS solar cell. To improve the performance of CdS/CdTe solar cells, a thin multilayer structure of CdS layer (∼80 nm) is applied, which is composed of a bottom layer (CSS CdS) and a top layer (CBD CdS). That bi-layer film can allow more photons to pass through it and significantly improve the short circuit current of the CdS/CdTe solar cells.

An improved hand-held four-detector gamma-probe for radioassisted oncological surgery

CERN Document Server

Dusi, W; Bollini, D; Moroni, C; Ricard, M

2000-01-01

The performance of an improved intraoperative gamma-probe for radioassisted oncological surgery is presented and discussed. The probe is based on a square array of four 5x5 mm sup 2 coplanar CdTe room temperature semiconductor detectors and each detector has an independent read out electronic chain, allowing an original handling of the signal. Therefore, the search for gamma-emission hot points may be carried out in two different, independent ways: (1) Finding out the position of the probe corresponding to the maximum value of the total counting rate, on the basis of a trial and error procedure (typical for the conventional probe; (2) Finding out the position of the probe where both the differences between the counting rate performed by orthogonal, adjacent halves of the array vanish (differential method). This makes the new probe sensitive to the bidimensional gradient of the gamma-ray flux, measured on the scanned plane. Furthermore, the algebraic sign of the difference indicates in which direction the prob...

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.

2017-12-01

Cd-rich composition and group-V element doping are of interest for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe, but the critical details concerning point defects are not yet fully established. Herein, we report on the properties of arsenic doped CdTe single crystals grown from Cd solvent by the travelling heater method. The photoluminescence spectra and activation energy of 74 ± 2 meV derived from the temperature-dependent Hall effect are consistent with AsTe as the dominant acceptor. Doping in the 1016 to 1017/cm3 range is achieved for measured As concentrations between 1016 and 1020/cm3 with the highest doping efficiency of 40% occurring near 1017 As/cm3. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Additionally, quenching experiments reveal at least two mechanisms of increased p-type doping in the dark, one decaying over 2-3 weeks and the other persisting for at least 2 months. These results provide essential insights for the application of As-doped CdTe in thin film solar cells.

Landfill waste and recycling: Use of a screening-level risk assessment tool for end-of-life cadmium telluride (CdTe) thin-film photovoltaic (PV) panels

International Nuclear Information System (INIS)

Cyrs, William D.; Avens, Heather J.; Capshaw, Zachary A.; Kingsbury, Robert A.; Sahmel, Jennifer; Tvermoes, Brooke E.

2014-01-01

Grid-connected solar photovoltaic (PV) power is currently one of the fastest growing power-generation technologies in the world. While PV technologies provide the environmental benefit of zero emissions during use, the use of heavy metals in thin-film PV cells raises important health and environmental concerns regarding the end-of-life disposal of PV panels. To date, there is no published quantitative assessment of the potential human health risk due to cadmium leaching from cadmium telluride (CdTe) PV panels disposed in a landfill. Thus, we used a screening-level risk assessment tool to estimate possible human health risk associated with disposal of CdTe panels into landfills. In addition, we conducted a literature review of potential cadmium release from the recycling process in order to contrast the potential health risks from PV panel disposal in landfills to those from PV panel recycling. Based on the results of our literature review, a meaningful risk comparison cannot be performed at this time. Based on the human health risk estimates generated for PV panel disposal, our assessment indicated that landfill disposal of CdTe panels does not pose a human health hazard at current production volumes, although our results pointed to the importance of CdTe PV panel end-of-life management. - Highlights: • Analysis of possible human health risk posed by disposal of CdTe panels into landfills. • Qualitative comparison of risks associated with landfill disposal and recycling of CdTe panels. • Landfill disposal of CdTe panels does not pose a human health hazard at current production volumes. • There could be potential risks associated with recycling if not properly managed. • Factors other than concerns over toxic substances will likely drive the decisions of how to manage end-of-life PV panels

Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

Energy Technology Data Exchange (ETDEWEB)

Ricq, St

1999-09-28

The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions

Energy Technology Data Exchange (ETDEWEB)

Xu, Yadong, E-mail: xyd220@nwpu.edu.cn; Liu, Hang; He, Yihui; Yang, Rui; Luo, Lin; Jie, Wanqi

2014-11-05

Highlights: • Conductivity type and resistivity of undoped Te-rich ZnTe and CdTe are different. • Te{sub i} and V{sub Zn} as the dominant defects account for the p-type low resistivity ZnTe. • Te{sub Cd} as the principle defect leading to the light n-type high resistivity CdTe. • DAP and eA peaks dominate the luminescence with their intensities anti-correlated. - Abstract: Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Te{sub i}) and Zinc vacancies (V{sub Zn}) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (Te{sub Cd}) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor–acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Te{sub i} or V{sub Zn}. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with V{sub Zn} or close Frenkel pair V{sub Zn}–Zn{sub i}.

Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties

International Nuclear Information System (INIS)

Vigil-Galan, O.; Sanchez-Meza, E.; Ruiz, C.M.; Sastre-Hernandez, J.; Morales-Acevedo, A.; Cruz-Gandarilla, F.; Aguilar-Hernandez, J.; Saucedo, E.; Contreras-Puente, G.; Bermudez, V.

2007-01-01

The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (J sc ), open circuit voltage (V OC ), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed

Semiconductor interfaces of polycrystalline CdTe thin-film solar cells. Characterization and modification of electronic properties

International Nuclear Information System (INIS)

Fritsche, J.

2003-01-01

In this thesis for the first time the electronic properties of the semiconductor interfaces in polycrystalline CdTe thin-film solar cells, as well as the morphological and electronic properties of the single semiconductor surfaces were systematically characterized by surface-sensitive measuring methods. The morphological surface properties were analyzed by scanning force microscopy. As substrate materials with SnO 2 /ITO covered glass was applied, where the CdS and CdTe layers were deposited. Furthermore the electronic and morphological material properties of differently treated SnO 2 surfaces were characterized. Beside the studies with scanning force microscopy sputtering depth profiles and X-ray photoelectron spectroscopy were measured

Effects of CdCl2 on the growth of CdTe on CdS films for solar cells by isothermal close-spaced vapor transport

International Nuclear Information System (INIS)

Vaccaro, P.O.; Meyer, G.O.; Saura, J.

1991-01-01

CdS/CdTe solar cells were made by depositing CdTe films by an isothermal close-spaced vapor transport method on sintered CdS/glass substrates. The influence of amounts of CdCl2 ranging from 0 wt% to 8 wt% in the CdTe source on the solar cells performance was studied. Increasing the CdCl2 content enhances the CdTe grainsize but degrades the spectral response and increases the reverse saturation current. An optimal CdCl2 concentration of 1 wt% was found for a growth temperature of 620 deg C. (Author)

Fabrication of fluorescent composite with ultrafast aqueous synthesized high luminescent CdTe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lei, E-mail: mejswu@ust.hk; Chen, Haibin, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk; Wu, Jingshen, E-mail: mejswu@ust.hk, E-mail: mejswu@ust.hk [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong and Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong); Bi, Xianghong, E-mail: takubatch@gmail.com [Fok Ying Tung Graduate School, The Hong Kong University of Science and Technology (Hong Kong)

2014-05-15

Without precursor preparation, inert gas protection and enormous amount of additives and reductants, CdTe quantum dots (QDs) can be rapidly synthesized with high quality. A 600 nm photoluminescence peak wavelength could be obtained within 1 hour's refluxing through minimal addition of 1,2-diaminoethane (DAE). The theoretical design for the experiments are illustrated and further proved by the characterization results with different concentrations and reagents. On the other hand, generation of CdTe QDs was found even under room temperature by applying droplet quantity of DAE. This indicates that QDs can be synthesized with simply a bottle and no enormous additives required. The QDs were mixed into the epoxy matrix through solution casting method with cetyltrimethylammonium (CTA) capping for phase transfer. The acquired epoxy based nanocomposite exhibits good transparency, compatibility and fluorescence.

Development of MoOx thin films as back contact buffer for CdTe solar cells in substrate configuration

International Nuclear Information System (INIS)

Gretener, C.; Perrenoud, J.; Kranz, L.; Baechler, C.; Yoon, S.; Romanyuk, Y.E.; Buecheler, S.; Tiwari, A.N.

2013-01-01

Molybdenum oxide compounds exhibit unique electrical and optical properties depending on oxygen vacancy concentration and composition and therefore, have recently attracted a lot of attention as a hole transport layer in various devices. In this work CdTe solar cells in substrate configuration were grown with evaporated MoO x back contact buffer layers and efficiencies of up to 10% could be achieved without using Cu in the back contact processing. The buffer layer – at the CdTe/back contact interface – in the finished cell was found to consist of MoO 2 phase instead of the expected MoO 3 phase as observed in as-deposited or annealed MoO x layers without CdTe deposition. In order to obtain MoO x buffer layers with desired stoichiometry, MoO x thin films were deposited by radio-frequency sputtering under different growth conditions. The chemical phase, composition, microstructure and optical properties of such layers were studied for their possible use in CdTe solar cells. - Highlights: ► MoO x is used as a back contact buffer in CdTe solar cells in substrate configuration. ► Efficiency of 10.0% was achieved without the addition of Cu. ► The back contact buffer in the finished device consists only of MoO 2 . ► Phases and microstructure of MoO x can be controlled by sputtering conditions

Low energy characterization of Caliste HD, a CdTe based imaging spectrometer

International Nuclear Information System (INIS)

Dubos, S.; Limousin, O.; Blondel, C.; Chipaux, R.; Menesguen, Y.; Meuris, A.; Orduna, T.; Tourette, T.; Sauvageon, A.

2012-01-01

Caliste HD is a recently developed micro-camera designed for X and gamma-rays astronomy, based on a 1*1 cm 2 CdTe Schottky pixelated detector. Its entire surface is composed of 256 pixels, disposed on a 16*16 pixels matrix with 625 micrometers pitch. This spectrometer is buttable on its 4 sides and can be used to create a large focal plane. Caliste HD is designed for space environment and its front-end electronic has a low power consumption and excellent noise performances which can provide an extended dynamic range, from 2 keV to 1 MeV as well as excellent energy resolutions. This large spectroscopic window is suited to observe astrophysical sources for a wide range of wavelengths. Moreover, electronic noise performances of this instrument were designed to set the low level-threshold lower than 2 keV; these continuous improvements now allow studying detailed spectroscopic performances at very low energies. For this purpose, we have exposed the Caliste HD module to a mono-energetic X-rays beam, and set energies between 2 and 12 keV emphasizing the 2 to 6 keV band. We could measure accurately detections efficiencies for the lowest energies and found it to be from 43% to 75% at 2.1 keV and 11.6 keV respectively, considering only particles detected in photopeak for single events, ignoring events impinging between two adjacent pixels. Absorption edges due to the Platinum (Pt) entrance electrode have been detected, as well as other characteristics absorption edges on the efficiency curve caused by Cd and Te elements. This efficiency detection profile thereby highlights crucial effects of the Pt electrode opacity on Caliste HD low energy response, and suggests the presence of absorption zones at the interface between CdTe crystal and Platinum. Besides, using a mono-energetic beam allows fine energy resolution measurement. It has been found to be ranging from 560 and 760 eV FWHM between 2 and 12 keV. In the same way, another crucial parameter - the linearity of the

Cytotoxicity of CdTe quantum dots in human umbilical vein endothelial cells: the involvement of cellular uptake and induction of pro-apoptotic endoplasmic reticulum stress

Directory of Open Access Journals (Sweden)

Yan M

2016-02-01

Full Text Available Ming Yan,1,* Yun Zhang,2,* Haiyan Qin,3 Kezhou Liu,1 Miao Guo,1 Yakun Ge,1 Mingen Xu,1 Yonghong Sun,4 Xiaoxiang Zheng4 1Department of Biomedical Engineering, College of Life Information Science and Instrument Engineering, Hangzhou Dianzi University, Hangzhou, 2Basic Medical Sciences, College of Medicine, Shaoxing University, Shaoxing, 3Department of Chemistry, Zhejiang University, 4Zhejiang Provincial Key Laboratory of Cardio-Cerebral Vascular Detection Technology and Medicinal Effectiveness Appraisal, Department of Biomedical Engineering, Zhejiang University, Hangzhou, People’s Republic of China *These authors contributed equally to this work Abstract: Cadmium telluride quantum dots (CdTe QDs have been proposed to induce oxidative stress, which plays a crucial role in CdTe QDs-mediated mitochondrial-dependent apoptosis in human umbilical vein endothelial cells (HUVECs. However, the direct interactions of CdTe QDs with HUVECs and their potential impairment of other organelles like endoplasmic reticulum (ER in HUVECs are poorly understood. In this study, we reported that the negatively charged CdTe QDs (–21.63±0.91 mV, with good dispersity and fluorescence stability, were rapidly internalized via endocytosis by HUVECs, as the notable internalization could be inhibited up to 95.52% by energy depletion (NaN3/deoxyglucose or low temperature. The endocytosis inhibitors (methyl-β-cyclodextrin, genistein, sucrose, chlorpromazine, and colchicine dramatically decreased the uptake of CdTe QDs by HUVECs, suggesting that both caveolae/raft- and clathrin-mediated endocytosis were involved in the endothelial uptake of CdTe QDs. Using immunocytochemistry, a striking overlap of the internalized CdTe QDs and ER marker was observed, which indicates that QDs may be transported to ER. The CdTe QDs also caused remarkable ER stress responses in HUVECs, confirmed by significant dilatation of ER cisternae, upregulation of ER stress markers GRP78/GRP94, and

Clinical evaluation of digital angiographic system equipped with the Safire' flat-panel detector of a direct conversion type

International Nuclear Information System (INIS)

Miura, Yoshiaki; Miura, Yusuke; Goto, Keiichi

2003-01-01

This report presents a report on clinical evaluation of our newly developed flat-panel X-ray detector of a direct conversion type, designed to provide images of a resolution higher than, or at least equal to, that ensured by X-ray photographic films, in clinical digital X-ray cinematography. This new detector was named 'Safire' the acronym of 'Shimadzu advanced flat imaging receptor', emphasizing its high technological level, such as the capability to ensure high quality of images. The clinical evaluation of Shimadzu DIGITEX Premier digital angiography system, equipped with this new flat-panel X-ray detector of a direct conversion type, has been started in March, 2003, at the Kokura Memorial Hospital in Kyushu, Japan. (author)

Characterization of the imaging performance of the simultaneously counting and integrating X-ray detector CIX

Energy Technology Data Exchange (ETDEWEB)

Fink, Johannes

2010-01-15

The CIX detector is a direct converting hybrid pixel detector designed for medical X-ray imaging applications. Its de ning feature is the simultaneous operation of a photon counter as well as an integrator in every pixel cell. This novel approach o ers a dynamic range of more than five orders of magnitude, as well as the ability to directly obtain the average photon energy from the measured data. Several CIX 0.2 ASICs have been successfully connected to CdTe, CdZnTe and Si sensors. These detector modules were tested with respect to the imaging performance of the simultaneously counting and integrating concept under X-ray irradiation. Apart from a characterization of the intrinsic benefits of the CIX concept, the sensor performance was also investigated. Here, the two parallel signal processing concepts offer valuable insights into material related effects like polarization and temporal response. The impact of interpixel coupling effects like charge-sharing, Compton scattering and X-ray fluorescence was evaluated through simulations and measurements. (orig.)

Characterization of the imaging performance of the simultaneously counting and integrating X-ray detector CIX

International Nuclear Information System (INIS)

Fink, Johannes

2010-01-01

The CIX detector is a direct converting hybrid pixel detector designed for medical X-ray imaging applications. Its de ning feature is the simultaneous operation of a photon counter as well as an integrator in every pixel cell. This novel approach o ers a dynamic range of more than five orders of magnitude, as well as the ability to directly obtain the average photon energy from the measured data. Several CIX 0.2 ASICs have been successfully connected to CdTe, CdZnTe and Si sensors. These detector modules were tested with respect to the imaging performance of the simultaneously counting and integrating concept under X-ray irradiation. Apart from a characterization of the intrinsic benefits of the CIX concept, the sensor performance was also investigated. Here, the two parallel signal processing concepts offer valuable insights into material related effects like polarization and temporal response. The impact of interpixel coupling effects like charge-sharing, Compton scattering and X-ray fluorescence was evaluated through simulations and measurements. (orig.)

Effect of Annealing on the Properties of Antimony Telluride Thin Films and Their Applications in CdTe Solar Cells

Directory of Open Access Journals (Sweden)

Zhouling Wang

2014-01-01

Full Text Available Antimony telluride alloy thin films were deposited at room temperature by using the vacuum coevaporation method. The films were annealed at different temperatures in N2 ambient, and then the compositional, structural, and electrical properties of antimony telluride thin films were characterized by X-ray fluorescence, X-ray diffraction, differential thermal analysis, and Hall measurements. The results indicate that single phase antimony telluride existed when the annealing temperature was higher than 488 K. All thin films exhibited p-type conductivity with high carrier concentrations. Cell performance was greatly improved when the antimony telluride thin films were used as the back contact layer for CdTe thin film solar cells. The dark current voltage and capacitance voltage measurements were performed to investigate the formation of the back contacts for the cells with or without Sb2Te3 buffer layers. CdTe solar cells with the buffer layers can reduce the series resistance and eliminate the reverse junction between CdTe and metal electrodes.

Optical characterization of epitaxial single crystal CdTe thin films on Al{sub 2}O{sub 3} (0001) substrates

Energy Technology Data Exchange (ETDEWEB)

Jovanovic, S.M.; Devenyi, G.A., E-mail: devenyga@mcmaster.ca; Jarvis, V.M.; Meinander, K.; Haapamaki, C.M.; Kuyanov, P.; Gerber, M.; LaPierre, R.R.; Preston, J.S.

2014-11-03

The optoelectronic properties of single crystal CdTe thin films were investigated by photoluminescence spectroscopy, photoreflectance spectroscopy and variable angle spectroscopic ellipsometry. The room temperature bandgap was measured to be 1.51 eV and was consistent between spectroscopic measurements and previously reported values. Breadth of bandgap emission was consistent with high quality material. Low temperature photoluminescence spectra indicated a dominant emission consistent with bound excitons. Emissions corresponding to self-compensation defects, doping and contaminants were not found. Variable angle spectroscopic ellipsometry measurements over the near-UV to infrared range demonstrated sharp resonance peaks. All spectroscopic measurements indicate high quality thin film material of comparable or better quality than bulk CdTe. - Highlights: • High quality epitaxial CdTe thin films were grown. • Two dimensional X-ray diffraction characterization confirmed single crystal material. • Photoluminescence indicated low defect density when compared to bulk single crystals. • Optical characterization indicated the presence of room temperature excitons.

Distributed Bragg reflectors obtained by combining Se and Te compounds: Influence on the luminescence from CdTe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Rousset, J.-G., E-mail: j-g.rousset@fuw.edu.pl; Kobak, J.; Janik, E.; Slupinski, T.; Golnik, A.; Kossacki, P.; Nawrocki, M.; Pacuski, W. [Faculty of Physics, Institute of Experimental Physics, University of Warsaw, ul. Pasteura 5, PL-02-093 Warszawa (Poland); Parlinska-Wojtan, M. [Institute of Nuclear Physics, Polish Academy of Sciences, PL-31342 Krakow (Poland)

2016-05-14

We report on the optical properties of structures containing self assembled CdTe quantum dots (QDs) combined with Te and Se based distributed Bragg reflectors either in a half cavity geometry with a relatively broad cavity mode or in a full cavity geometry where the cavity mode is much narrower. We show that for both structures the extraction coefficient of the light emitted from the QDs ensemble is enhanced by more than one order of magnitude with respect to the QDs grown on a ZnTe buffer. However, a single QD line broadening is observed and attributed to an unintentional incorporation of Se in the vicinity of the CdTe QDs. We show that postponing the QDs growth for 24 h after the distributed Bragg reflector deposition allows recovering sharp emission lines from individual QDs. This two step growth method is proven to be efficient also for the structures with CdTe QDs containing a single Mn{sup 2+} ion.

A novel strategy to evaluate the degradation of quantum dots: identification and quantification of CdTe quantum dots and corresponding ionic species by CZE-ICP-MS.

Science.gov (United States)

Meng, Peijun; Xiong, Yamin; Wu, Yingting; Hu, Yue; Wang, Hui; Pang, Yuanfeng; Jiang, Shuqing; Han, Sihai; Huang, Peili

2018-05-09

In view of the significance and urgency of the speciation analysis of quantum dots (QDs) and their degradation products for clarifying their degradation rules and toxicity mechanisms, a method for the identification and quantification of CdTe QDs and corresponding ionic species in complex matrices was developed using capillary zone electrophoresis (CZE) coupled to inductively coupled plasma-mass spectrometry (ICP-MS). The quality assessment of commercial CdTe QDs and serum pharmacokinetics of synthesized CdTe QDs in rats were successfully undertaken using the developed CZE-ICP-MS method.

Size-controlled sensitivity and selectivity for the fluorometric detection of Ag+ by homocysteine capped CdTe quantum dots

International Nuclear Information System (INIS)

Jiao, Hangzhou; Liang, Zhenhua; Peng, Guihua; Zhang, Ling; Lin, Hengwei

2014-01-01

We have synthesized water dispersible CdTe quantum dots (QDs) in different sizes and with various capping reagents, and have studied the effects of their size on the sensitivity and selectivity in the fluorometric determination of metal ions, particularly of silver(I). It is found that an increase in the particle size of homocysteine-capped CdTe QDs from 1.7 nm to 3.3 nm and to 3.7 nm enhances both the sensitivity and selectivity of the determination of Ag(I) to give an ultimate limit of detection as low as 8.3 nM. This effect can partially be explained by the better passivation of surface traps on smaller sized QDs via adsorption of Ag(I), thereby decreasing the apparent detection efficiency. In addition, the presence of CdS in the CdTe QDs is likely to play a role. The study demonstrates that an improvement in sensing performance is accomplished by using QDs of fine-tuned particle sizes. Such effects are likely also to occur with other QD-based optical probes. (author)

Dosimetric evaluation of a MOSFET detector for clinical application in photon therapy.

Science.gov (United States)

Kohno, Ryosuke; Hirano, Eriko; Nishio, Teiji; Miyagishi, Tomoko; Goka, Tomonori; Kawashima, Mitsuhiko; Ogino, Takashi

2008-01-01

Dosimetric characteristics of a metal oxide-silicon semiconductor field effect transistor (MOSFET) detector are studied with megavoltage photon beams for patient dose verification. The major advantages of this detector are its size, which makes it a point dosimeter, and its ease of use. In order to use the MOSFET detector for dose verification of intensity-modulated radiation therapy (IMRT) and in-vivo dosimetry for radiation therapy, we need to evaluate the dosimetric properties of the MOSFET detector. Therefore, we investigated the reproducibility, dose-rate effect, accumulated-dose effect, angular dependence, and accuracy in tissue-maximum ratio measurements. Then, as it takes about 20 min in actual IMRT for the patient, we evaluated fading effect of MOSFET response. When the MOSFETs were read-out 20 min after irradiation, we observed a fading effect of 0.9% with 0.9% standard error of the mean. Further, we applied the MOSFET to the measurement of small field total scatter factor. The MOSFET for dose measurements of small field sizes was better than the reference pinpoint chamber with vertical direction. In conclusion, we assessed the accuracy, reliability, and usefulness of the MOSFET detector in clinical applications such as pinpoint absolute dosimetry for small fields.

Interactions between N-acetyl-L-cysteine protected CdTe quantum dots and doxorubicin through spectroscopic method

Energy Technology Data Exchange (ETDEWEB)

Yang, Xiupei, E-mail: xiupeiyang@163.com [Chemical Synthesis and Pollution Control Key Laboratory of Sichuan Province, Nanchong 637000 (China); College of Chemistry and Chemical Engineering, China West Normal University, Nanchong 637000 (China); Lin, Jia; Liao, Xiulin; Zong, Yingying; Gao, Huanhuan [College of Chemistry and Chemical Engineering, China West Normal University, Nanchong 637000 (China)

2015-06-15

Highlights: • CdTe quantum dots with the diameter of 3–5 nm were synthesized in aqueous solution. • The modified CdTe quantum dots showed well fluorescence properties. • The interaction between the CdTe quantum dots and doxorubicin (DR) was investigated. - Abstract: N-acetyl-L-cysteine protected cadmium telluride quantum dots with a diameter of 3–5 nm were synthesized in aqueous solution. The interaction between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin was investigated by ultraviolet–visible absorption and fluorescence spectroscopy at physiological conditions (pH 7.2, 37 °C). The results indicate that electron transfer has occurred between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin under light illumination. The quantum dots react readily with doxorubicin to form a N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex via electrostatic attraction between the −NH{sub 3}{sup +} moiety of doxorubicin and the −COO{sup −} moiety of N-acetyl-L-cysteine/cadmium telluride quantum dots. The interaction of N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex with bovine serum albumin was studied as well, showing that the complex might induce the conformation change of bovine serum due to changes in microenvironment of bovine serum.

Interactions between N-acetyl-L-cysteine protected CdTe quantum dots and doxorubicin through spectroscopic method

International Nuclear Information System (INIS)

Yang, Xiupei; Lin, Jia; Liao, Xiulin; Zong, Yingying; Gao, Huanhuan

2015-01-01

Highlights: • CdTe quantum dots with the diameter of 3–5 nm were synthesized in aqueous solution. • The modified CdTe quantum dots showed well fluorescence properties. • The interaction between the CdTe quantum dots and doxorubicin (DR) was investigated. - Abstract: N-acetyl-L-cysteine protected cadmium telluride quantum dots with a diameter of 3–5 nm were synthesized in aqueous solution. The interaction between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin was investigated by ultraviolet–visible absorption and fluorescence spectroscopy at physiological conditions (pH 7.2, 37 °C). The results indicate that electron transfer has occurred between N-acetyl-L-cysteine/cadmium telluride quantum dots and doxorubicin under light illumination. The quantum dots react readily with doxorubicin to form a N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex via electrostatic attraction between the −NH 3 + moiety of doxorubicin and the −COO − moiety of N-acetyl-L-cysteine/cadmium telluride quantum dots. The interaction of N-acetyl-L-cysteine/cadmium telluride-quantum dots/doxorubicin complex with bovine serum albumin was studied as well, showing that the complex might induce the conformation change of bovine serum due to changes in microenvironment of bovine serum

Probing Defects in a Small Pixellated CdTe Sensor Using an Inclined Mono Energetic X-Ray Micro Beam

Science.gov (United States)

Fröjdh, Erik; Fröjdh, C.; Gimenez, E. N.; Krapohl, D.; Maneuski, D.; Norlin, B.; O'Shea, V.; Wilhelm, H.; Tartoni, N.; Thungström, G.; Zain, R. M.

2013-08-01

High quantum efficiency is important in X-ray imaging applications. This means using high-Z sensor materials. Unfortunately many of these materials suffer from defects that cause non-ideal charge transport. In order to increase the understanding of these defects, we have mapped the 3D response of a number of defects in two 1 mm thick CdTe sensors with different pixel sizes (55 μm and 110 μm) using a monoenergetic microbeam at 79 keV. The sensors were bump bonded to Timepix read out chips. Data was collected in photon counting as well as time-over-threshold mode. The time-over-threshold mode is a very powerful tool to investigate charge transport properties and fluorescence in pixellated detectors since the signal from the charge that each photon deposits in each pixel can be analyzed. Results show distorted electrical field around the defects, indications of excess leakage current and large differences in behavior between electron collection and hole collection mode. The experiments were carried out on the Extreme Conditions Beamline I15 at Diamond Light Source.

Characterization of core/shell structures based on CdTe and GaAs nanocrystalline layers deposited on SnO2 microwires

Science.gov (United States)

Ghimpu, L.; Ursaki, V. V.; Pantazi, A.; Mesterca, R.; Brâncoveanu, O.; Shree, Sindu; Adelung, R.; Tiginyanu, I. M.; Enachescu, M.

2018-04-01

We report the fabrication and characterization of SnO2/CdTe and SnO2/GaAs core/shell microstructures. CdTe or GaAs shell layers were deposited by radio-frequency (RF) magnetron sputtering on core SnO2 microwires synthesized by a flame-based thermal oxidation method. The produced structures were characterized by scanning electron microscopy (SEM), high-resolution scanning transmission electron microscope (HR-STEM), X-ray diffraction (XRD), Raman scattering and FTIR spectroscopy. It was found that the SnO2 core is of the rutile type, while the shells are composed of CdTe or GaAs nanocrystallites of zincblende structure with the dimensions of crystallites in the range of 10-20 nm. The Raman scattering investigations demonstrated that the quality of the porous nanostructured shell is improved by annealing at temperatures of 420-450 °C. The prospects of implementing these microstructures in intrinsic type fiber optic sensors are discussed.

The influence of capping thioalkyl acid on the growth and photoluminescence efficiency of CdTe and CdSe quantum dots

International Nuclear Information System (INIS)

Aldeek, Fadi; Lambert, Jacques; Balan, Lavinia; Schneider, Raphael

2008-01-01

The influence of thioalkyl acid ligand was evaluated during aqueous synthesis at 100 deg. C and under hydrothermal conditions (150 deg. C) of CdTe and CdSe quantum dots (QDs). Experiments performed with 3-mercaptopropionic acid (MPA), 6-mercaptohexanoic acid (MHA) and 11-mercaptoundecanoic acid (MUA) demonstrated that the use of MHA and MUA allowed for the preparation of very small nanoparticles (0.6-2.5 nm) in carrying out the reaction under atmospheric pressure or in an autoclave and that the photophysical properties of QDs were dependent on the ligand and on the synthesis conditions. The influence of various experimental conditions, including the Te-to-Cd ratio, temperature, and precursor concentration, on the growth rate of CdTe or CdSe QDs has been systematically investigated. The fluorescence intensities of CdTe QDs capped with MPA, MHA, or MUA versus pH were also found to be related to the surface coverage of the nanoparticles.

Understanding and managing health and environmental risks of CIS, CGS, and CdTe photovoltaic module production and use: A workshop

Energy Technology Data Exchange (ETDEWEB)

Moskowitz, P.D.; Zweibel, K.; DePhillips, M.P. [eds.

1994-04-28

Environmental, health and safety (EH&S) risks presented by CIS, CGS and CdTe photovoltaic module production, use and decommissioning have been reviewed and discussed by several authors. Several EH&S concerns exit. The estimated EH&S risks are based on extrapolations of toxicity, environmental mobility, and bioavailability data for other related inorganic compounds. Sparse data, however, are available for CIS, CGS or CdTe. In response to the increased interest in these materials, Brookhaven National Laboratory (BNL) has been engaged in a cooperative research program with the National Renewable Energy Laboratory (NREL), the Fraunhofer Institute for Solid State Technology (IFT), the Institute of Ecotoxicity of the GSF Forschungszentrum fair Umwelt und Gesundheit, and the National Institute of Environmental Health Sciences (NIEHS) to develop fundamental toxicological and environmental data for these three compounds. This workshop report describes the results of these studies and describes their potential implications with respect to the EH&S risks presented by CIS, CGS, and CdTe module production, use and decommissioning.

Energy resolution of the CdTe-XPAD detector:calibration and potential for Laue diffractionmeasurements on protein crystals

Energy Technology Data Exchange (ETDEWEB)

Medjoubi K.; Idir M.; Thompson, A.; Berar, J-F.; Clemens, J-C.; Delpierre, P.; Da Silva, P.; Dinkespiler, B.; Itie, J-P.; Legrand, P.; Menneglier, C.; Mercere, P.; Picca, F.; Samama J-P.

2012-02-02

The XPAD3S-CdTe, a CdTe photon-counting pixel array detector, has been used to measure the energy and the intensity of the white-beam diffraction from a lysozyme crystal. A method was developed to calibrate the detector in terms of energy, allowing incident photon energy measurement to high resolution (approximately 140 eV), opening up new possibilities in energy-resolved X-ray diffraction. In order to demonstrate this, Laue diffraction experiments were performed on the bending-magnet beamline METROLOGIE at Synchrotron SOLEIL. The X-ray energy spectra of diffracted spots were deduced from the indexed Laue patterns collected with an imaging-plate detector and then measured with both the XPAD3S-CdTe and the XPAD3S-Si, a silicon photon-counting pixel array detector. The predicted and measured energy of selected diffraction spots are in good agreement, demonstrating the reliability of the calibration method. These results open up the way to direct unit-cell parameter determination and the measurement of high-quality Laue data even at low resolution. Based on the success of these measurements, potential applications in X-ray diffraction opened up by this type of technology are discussed.

Improving surface smoothness and photoluminescence of CdTe(1 1 1)A on Si(1 1 1) substrates grown by molecular beam epitaxy using Mn atoms

International Nuclear Information System (INIS)

Wang, Jyh-Shyang; Tsai, Yu-Hsuan; Chen, Chang-Wei; Dai, Zi-Yuan; Tong, Shih-Chang; Yang, Chu-Shou; Wu, Chih-Hung; Yuan, Chi-Tsu; Shen, Ji-Lin

2014-01-01

Highlights: • CdTe(1 1 1)A epilayers were grown on Si(1 1 1) substrates by molecular beam epitaxy. • We report an enhanced growth using Mn atoms. • The significant improvements in surface quality and optical properties were found. - Abstract: This work demonstrates an improvement of the molecular beam epitaxial growth of CdTe(1 1 1)A epilayer on Si(1 1 1) substrates using Mn atoms. The reflection high-energy electron diffraction patterns show that the involvement of some Mn atoms in the growth of CdTe(1 1 1)A is even more effective than the use of a buffer layer with a smooth surface for forming good CdTe(1 1 1)A epilayers. 10 K Photoluminescence spectra show that the incorporation of only 2% Mn significantly reduced the intensity of defect-related emissions and considerably increased the integral intensity of exciton-related emissions by a large factor of about 400

Musculoskeletal wide detector CT: Principles, techniques and applications in clinical practice and research

International Nuclear Information System (INIS)

Gondim Teixeira, Pedro Augusto; Gervaise, Alban; Louis, Matthias; Lecocq, Sophie; Raymond, Ariane; Aptel, Sabine; Blum, Alain

2015-01-01

Highlights: • Wide area-detector CT availability is growing steadily. • Advanced techniques such as Dynamic CT, Perfusion CT and dual energy can be used in clinical practice. • Optimal acquisition protocol is needed to increase diagnostic performance and limit dose exposure. • Guidelines for data acquisition and interpretation may increase diagnostic performance and reproducibility. - Abstract: A progressive increase in the detector width in CT scanners has meant that advanced techniques such as dynamic, perfusion and dual-energy CT are now at the radiologist's disposal. Although these techniques may be important for the diagnosis of various musculoskeletal diseases, data acquisition and interpretation can be challenging. This article offers a practical guide for the use of these tools including acquisition protocol, post-processing options and data interpretation based on 7 years of clinical experience in a tertiary university hospital

Correction of incomplete charge collection in CdTe detectors using the correlation with the rise time distribution

International Nuclear Information System (INIS)

Horovitz, Yossi.

1994-01-01

Experimentally and theoretically it was found that there is a correlation between tile pulse rise time and the amount of charge that is collected in the detector contacts. As the rise time becomes longer less charge is collected. In this thesis it has been proven that one can find from this correlation, with the aid of a mathematical function, the theoretical amount of charge that has to be collected in the contacts if no trapping took place. This mathematical function called the correction function, f(t), is dependent on the rise time and the material quality (the trap concentration). In order to find the correction function, a computer, simulation was written. This computer program simulates, based on a phenomenological theoretical model, the charge collection in the detector. This model depends on three parameters (for the holes and for the electrons) that characterized the charge collection quality of the detector. The parameters are: the mean free time to be trapped, the detrapping time and the transit time that depends on the electric field. By a comparison between the simulation output and experimental data, these parameters were found. The correction function was found to be linear with rise time. This conclusion is confirmed experimentally. In this work experiments have been carried out that measured the correlation between two parameters. These experiments measured, for each photon that interacts with the detector, the pulse rise time and the pulse amplitude. A computer program accepts these spectra and substitute each element in the correction function and corrects for the incomplete charge collection. It was found that the correction function does not depend on the energy of the radiation source and source-detector geometry but depends on the material quality. The application of the correction function to the two dimensional spectra gives a correction of tens of percents in charge collection and provides an improvement in the resolution and the peak

Emission switching in carbon dots coated CdTe quantum dots driving by pH dependent hetero-interactions

Energy Technology Data Exchange (ETDEWEB)

Dai, Xiao; Wang, Hao; Yi, Qinghua; Wang, Yun; Cong, Shan; Zhao, Jie; Sun, Yinghui; Zou, Guifu, E-mail: zouguifu@suda.edu.cn, E-mail: jiexiong@uestc.edu.cn [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China); Qian, Zhicheng [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Huang, Jianwen; Xiong, Jie, E-mail: zouguifu@suda.edu.cn, E-mail: jiexiong@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Luo, Hongmei [Department of Chemical and Materials Engineering, New Mexico State University, Las Cruces, New Mexico 88003 (United States)

2015-11-16

Due to the different emission mechanism between fluorescent carbon dots and semiconductor quantum dots (QDs), it is of interest to explore the potential emission in hetero-structured carbon dots/semiconducting QDs. Herein, we design carbon dots coated CdTe QDs (CDQDs) and investigate their inherent emission. We demonstrate switchable emission for the hetero-interactions of the CDQDs. Optical analyses indicate electron transfer between the carbon dots and the CdTe QDs. A heterojunction electron process is proposed as the driving mechanism based on N atom protonation of the carbon dots. This work advances our understanding of the interaction mechanism of the heterostructured CDQDs and benefits the future development of optoelectronic nanodevices with new functionalities.

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

Science.gov (United States)

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

2018-05-01

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Enhancement of open-circuit voltage and the fill factor in CdTe nanocrystal solar cells by using interface materials

International Nuclear Information System (INIS)

Zhu, Jiaoyan; Yang, Yuehua; Gao, Yuping; Qin, Donghuan; Wu, Hongbin; Huang, Wenbo; Hou, Lintao

2014-01-01

Interface states influence the operation of nanocrystal (NC) solar cell carrier transport, recombination and energetic mechanisms. In a typical CdTe NC solar cell with a normal structure of a ITO/p-CdTe NCs/n-acceptor (or without)/Al configuration, the contact between the ITO and CdTe is a non-ohm contact due to a different work function (for an ITO, the value is ∼4.7 eV, while for CdTe NCs, the value is ∼5.3 eV), which results in an energetic barrier at the ITO/CdTe interface and decreases the performance of the NC solar cells. This work investigates how interface materials (including Au, MoO x and C 60 ) affect the performance of NC solar cells. It is found that devices with interface materials have shown higher V oc than those without interface materials. For the case in which we used Au as an interface, we obtained a high open-circuit voltage of 0.65 V, coupled with a high fill factor (62%); this resulted in a higher energy conversion efficiency (ECE) of 5.3%, which showed a 30% increase in the ECE compared with those without the interlayer. The capacitance measurements indicate that the increased V oc in the case in which Au was used as the interface is likely due to good ohm contact between the Au’s and the CdTe NCs’ thin film, which decreases the energetic barrier at the ITO/CdTe interface. (paper)

Development of MoO{sub x} thin films as back contact buffer for CdTe solar cells in substrate configuration

Energy Technology Data Exchange (ETDEWEB)

Gretener, C., E-mail: christina.gretener@empa.ch [Laboratory for Thin Films and Photovoltaics, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland); Perrenoud, J.; Kranz, L.; Baechler, C. [Laboratory for Thin Films and Photovoltaics, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland); Yoon, S. [Laboratory for Solid State Chemistry and Catalysis, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland); Romanyuk, Y.E.; Buecheler, S.; Tiwari, A.N. [Laboratory for Thin Films and Photovoltaics, Empa — Swiss Federal Laboratories for Materials Science and Technology, Überlandstr. 129, 8600 Dübendorf (Switzerland)

2013-05-01

Molybdenum oxide compounds exhibit unique electrical and optical properties depending on oxygen vacancy concentration and composition and therefore, have recently attracted a lot of attention as a hole transport layer in various devices. In this work CdTe solar cells in substrate configuration were grown with evaporated MoO{sub x} back contact buffer layers and efficiencies of up to 10% could be achieved without using Cu in the back contact processing. The buffer layer – at the CdTe/back contact interface – in the finished cell was found to consist of MoO{sub 2} phase instead of the expected MoO{sub 3} phase as observed in as-deposited or annealed MoO{sub x} layers without CdTe deposition. In order to obtain MoO{sub x} buffer layers with desired stoichiometry, MoO{sub x} thin films were deposited by radio-frequency sputtering under different growth conditions. The chemical phase, composition, microstructure and optical properties of such layers were studied for their possible use in CdTe solar cells. - Highlights: ► MoO{sub x} is used as a back contact buffer in CdTe solar cells in substrate configuration. ► Efficiency of 10.0% was achieved without the addition of Cu. ► The back contact buffer in the finished device consists only of MoO{sub 2}. ► Phases and microstructure of MoO{sub x} can be controlled by sputtering conditions.

Study of CdTe:Cl and CdZnTe detectors for medical multi-slices X-ray Computed Tomography; Etude de detecteurs en CdTe:Cl et CdZnTe pour la tomographie X medicale multicoupes

Energy Technology Data Exchange (ETDEWEB)

Ricq, St

1999-09-28

The application of CdTe and CdZnTe detectors to medical X-ray Computed Tomography have been investigated. Different electrodes (Au, Pt, In) have been deposited on CdZnTe HPBM and on CdTe:ClTHM. Their injection properties have been determined with Current-Voltage characteristics. Under X-ray in CT conditions, injection currents measurements reveal trapped carriers space-charges formation. The same way, the comparisons of the responses to X-beam cut-off with various injection possibilities enable to follow the space-charges evolutions and then to determine the predominant traps types. Nevertheless, both hole and electron traps are responsible for the memory effect e.g. the currents levels dependence with irradiation history. This effect is noticed in particular on responses to fast flux variations that simulate scanner's conditions. Trap levels probably corresponding to native defects are responsible for these limitations. In order to make such detectors suitable for X-ray Computed Tomography, significant progresses in CdTe for CdZnTe crystal growth with an important defects densities reduction (factor 10), or possibly counting mode operation, seem necessary. (author)

Leaching of cadmium and tellurium from cadmium telluride (CdTe) thin-film solar panels under simulated landfill conditions

Science.gov (United States)

Ramos-Ruiz, Adriana; Wilkening, Jean V.; Field, James A.; Sierra-Alvarez, Reyes

2017-01-01

A crushed non-encapsulated CdTe thin-film solar cell was subjected to two standardized batch leaching tests (i.e., Toxicity Characteristic Leaching Procedure (TCLP) and California Waste Extraction Test (WET)) and to a continuous-flow column test to assess cadmium (Cd) and tellurium (Te) dissolution under conditions simulating the acidic- and the methanogenic phases of municipal solid waste landfills. Low levels of Cd and Te were solubilized in both batch leaching tests (leaching behavior of CdTe in the columns is related to different aqueous pH and redox conditions promoted by the microbial communities in the columns, and is in agreement with thermodynamic predictions. PMID:28472709

Application of a radiation detector in the interdisciplinary study. 1. Portable fluorescent X-ray analysis using the Si-PIN photodiode

International Nuclear Information System (INIS)

Ito, Yutaka

2000-01-01

As a semiconductor used for X-ray detector has excellent resolution, it must be cooled by liquid nitrogen at its use, which is a limitation on its actual use and applications. Then, a compound detector with wider bandwidth such as CdTe and HgI 2 has conventionally been used to attempt to use the detector at room temperature. Here was adopted an Si-PIN photodiode for a representative small type semiconductor detector unnecessary for liquid nitrogen, to introduce small and portable fluorescent X-ray analyzer for its application. As Si-PIN can work at room temperature, it has large leak current and insufficiently spread empty phase, so it is used by cooling due to Peltier element and so on. Then, here was used an X-ray detector, XR-100CR of AMPTEK Inc. composed of Si-PIN photodiode and a Pre-AMP. And, for a portable fluorescent X-ray analyzer, the Si-PIN photodiode detector of AMPTEK Inc., and a closely sealed small radiation source of 50 μ Ci 241 Am for excitation of X-ray in specimen were used. Its working principle consists of excitation of elements in a specimen with X- and gamma-ray from 241 Am, and detection of emitted fluorescent X-ray with Si-PIN photodiode. (G.K.)

Clinical evaluation of digital angiographic system equipped with the Safire' flat-panel detector of a direct conversion type

Energy Technology Data Exchange (ETDEWEB)

Miura, Yoshiaki; Miura, Yusuke; Goto, Keiichi [Shimadzu Corporation, Medical Systems Division, Research and Development, Kyoto (JP)] [and others

2003-06-01

This report presents a report on clinical evaluation of our newly developed flat-panel X-ray detector of a direct conversion type, designed to provide images of a resolution higher than, or at least equal to, that ensured by X-ray photographic films, in clinical digital X-ray cinematography. This new detector was named 'Safire' the acronym of 'Shimadzu advanced flat imaging receptor', emphasizing its high technological level, such as the capability to ensure high quality of images. The clinical evaluation of Shimadzu DIGITEX Premier digital angiography system, equipped with this new flat-panel X-ray detector of a direct conversion type, has been started in March, 2003, at the Kokura Memorial Hospital in Kyushu, Japan. (author)

High-Efficiency, Commercial Ready CdTe Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Sites, James R. [Colorado State Univ., Fort Collins, CO (United States)

2015-11-19

Colorado State’s F-PACE project explored several ways to increase the efficiency of CdTe solar cells and to better understand the device physics of those cells under study. Increases in voltage, current, and fill factor resulted in efficiencies above 17%. The three project tasks and additional studies are described in detail in the final report. Most cells studied were fabricated at Colorado State using an industry-compatible single-vacuum closed-space-sublimation (CSS) chamber for deposition of the key semiconductor layers. Additionally, some cells were supplied by First Solar for comparison purposes, and a small number of modules were supplied by Abound Solar.

Study of CdTe surface by SIMS and RBS ellipsometry

International Nuclear Information System (INIS)

Stuck, R.; Hage-Ali, M.; Grob, A.; Siffert, P.

1978-01-01

For a better understanding of the mechanisms involved in the rectification of metal-cadmium telluride contacts, the surface of bromine-methanol etched CdTe crystals by means of ellipsometry, secondary ions mass spectroscopy (SIMS) and Rutherford backscattering of charged particles (RBS) has been investigated. The results show that these surfaces are contaminated with bromine and that a tellurium surface oxide layer grows, its thickness increasing with time. This surface layer composition has been analyzed at different steps of its evolution [fr

Evaluation of Biological Toxicity of CdTe Quantum Dots with Different Coating Reagents according to Protein Expression of Engineering Escherichia coli

Directory of Open Access Journals (Sweden)

Wei Xu

2015-01-01

Full Text Available The results obtained from toxicity assessment of quantum dots (QDs can be used to establish guidelines for the application of QDs in bioimaging. This paper focused on the design of a novel method to evaluate the toxicity of CdTe QDs using engineering Escherichia coli as a model. The toxicity of mercaptoacetic acid (MPA, glutathione (GSH, and L-cysteine (Cys capped CdTe QDs was analyzed according to the heterologous protein expression in BL21/DE3, engineering Escherichia coli extensively used for protein expression. The results showed that the MPA-CdTe QDs had more serious toxicity than the other two kinds of CdTe QDs. The microscopic images and SEM micrographs further proved that both the proliferation and the protein expression of engineering Escherichia coli were inhibited after treatment with MPA-CdTe QDs. The proposed method is important to evaluate biological toxicity of both QDs and other nanoparticles.

Ultrasensitive fluorescence immunoassay for detection of ochratoxin A using catalase-mediated fluorescence quenching of CdTe QDs

Science.gov (United States)

Huang, Xiaolin; Zhan, Shengnan; Xu, Hengyi; Meng, Xianwei; Xiong, Yonghua; Chen, Xiaoyuan

2016-04-01

Herein, for the first time we report an improved competitive fluorescent enzyme linked immunosorbent assay (ELISA) for the ultrasensitive detection of ochratoxin A (OTA) by using hydrogen peroxide (H2O2)-induced fluorescence quenching of mercaptopropionic acid-modified CdTe quantum dots (QDs). In this immunoassay, catalase (CAT) was labeled with OTA as a competitive antigen to connect the fluorescence signals of the QDs with the concentration of the target. Through the combinatorial use of H2O2-induced fluorescence quenching of CdTe QDs as a fluorescence signal output and the ultrahigh catalytic activity of CAT to H2O2, our proposed method could be used to perform a dynamic linear detection of OTA ranging from 0.05 pg mL-1 to 10 pg mL-1. The half maximal inhibitory concentration was 0.53 pg mL-1 and the limit of detection was 0.05 pg mL-1. These values were approximately 283- and 300-folds lower than those of horseradish peroxidase (HRP)-based conventional ELISA, respectively. The reported method is accurate, highly reproducible, and specific against other mycotoxins in agricultural products as well. In summary, the developed fluorescence immunoassay based on H2O2-induced fluorescence quenching of CdTe QDs can be used for the rapid and highly sensitive detection of mycotoxins or haptens in food safety monitoring.Herein, for the first time we report an improved competitive fluorescent enzyme linked immunosorbent assay (ELISA) for the ultrasensitive detection of ochratoxin A (OTA) by using hydrogen peroxide (H2O2)-induced fluorescence quenching of mercaptopropionic acid-modified CdTe quantum dots (QDs). In this immunoassay, catalase (CAT) was labeled with OTA as a competitive antigen to connect the fluorescence signals of the QDs with the concentration of the target. Through the combinatorial use of H2O2-induced fluorescence quenching of CdTe QDs as a fluorescence signal output and the ultrahigh catalytic activity of CAT to H2O2, our proposed method could be used to

Highly fluorescent CdTe quantum dots with reduced cytotoxicity-A Robust biomarker

Directory of Open Access Journals (Sweden)

Jandi Kim

2015-03-01

Full Text Available l-Cysteine (Cys capped CdTe quantum dots (CdTe@Cys QDs were successfully synthesized in an aqueous medium. The synthesized CdTe@Cys samples were analyzed using Fourier transform infrared (FT-IR spectroscopy, fluorescence (FL spectroscopy, transmission electron microscopy (TEM, confocal microscopy and subsequently subjected to the antibacterial test. Systematic investigations were carried out for the determination of optimal conditions namely the ratios of Cd:Te, CdTe:Cys, pH value and the chemical stability of CdTe@Cys. Moreover, the reactivation of FL intensity in the CdTe@Cys sample was done easily by the addendum of Cys. The introduction of additional cysteine to the CdTe@Cys QDs sample showed an enhancement in terms of the FL intensity and stability along with the reduced antibacterial activity. This was further confirmed through Thiazolyl blue tetrazolium bromide (MTT assays. Both the result of the bio-stability tests namely the antibacterial test and MTT assay displayed similarities between the externally added Cys and cytotoxicity of the bacteria and human HeLa cancer cell lines. Confocal microscopic images were captured for the CdTe@Cys conjugated Escherichia coli.

Study of material properties important for an optical property modulation-based radiation detection method for positron emission tomography.

Science.gov (United States)

Tao, Li; Daghighian, Henry M; Levin, Craig S

2017-01-01

We compare the performance of two detector materials, cadmium telluride (CdTe) and bismuth silicon oxide (BSO), for optical property modulation-based radiation detection method for positron emission tomography (PET), which is a potential new direction to dramatically improve the annihilation photon pair coincidence time resolution. We have shown that the induced current flow in the detector crystal resulting from ionizing radiation determines the strength of optical modulation signal. A larger resistivity is favorable for reducing the dark current (noise) in the detector crystal, and thus the higher resistivity BSO crystal has a lower (50% lower on average) noise level than CdTe. The CdTe and BSO crystals can achieve the same sensitivity under laser diode illumination at the same crystal bias voltage condition while the BSO crystal is not as sensitive to 511-keV photons as the CdTe crystal under the same crystal bias voltage. The amplitude of the modulation signal induced by 511-keV photons in BSO crystal is around 30% of that induced in CdTe crystal under the same bias condition. In addition, we have found that the optical modulation strength increases linearly with crystal bias voltage before saturation. The modulation signal with CdTe tends to saturate at bias voltages higher than 1500 V due to its lower resistivity (thus larger dark current) while the modulation signal strength with BSO still increases after 3500 V. Further increasing the bias voltage for BSO could potentially further enhance the modulation strength and thus, the sensitivity.

Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

International Nuclear Information System (INIS)

Fedorenko, Y. G.; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K.

2015-01-01

By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe

Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

Energy Technology Data Exchange (ETDEWEB)

Fedorenko, Y. G., E-mail: y.fedorenko@liverpool.ac.uk; Major, J. D.; Pressman, A.; Phillips, L. J.; Durose, K. [Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, Chadwick Building, University of Liverpool, Liverpool L69 7ZF (United Kingdom)

2015-10-28

By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe, suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase, indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe.

New Sunshine Program for fiscal 2000. Development of photovoltaic system commercialization technology - Development of thin-film solar cell manufacturing technology - Development of low-cost/large area module manufacturing technology (Development of high-reliability CdTe solar cell module manufacturing technology); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Tei cost dai menseki mojuru seizo gijutsu kaihatsu (Koshinraisei CdTe taiyo denchi mojuru no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

2001-03-01

Research and development was conducted for reliable CdTe solar cell modules, large in area and high in efficiency. In the study of large-area CdS thin film fabrication, a conversion efficiency of 12.5-14.2% was achieved in a cell in a large-area substrate using a mist method-aided process of continuous CdS film fabrication. In the study of large-area CdTe thin film fabrication, the optimization was studied of the base-forming CdS film fabrication conditions and of the CdTe film fabrication conditions in a method using a CdTe powder processed by dry kneading, and a conversion efficiency peak was found to exist when the CdS film thickness was in the range of 700-900 angstrom. In the fabrication of large-area submodules, a large-area substrate was taken up, and TCO (transparent conducting oxide) film was fabricated by the mist method, CdTe film by the normal pressure CSS method, electrodes by the screen printing method, and CdTe film patterns by the blast method. As the result, a conversion efficiency of 11.0% was achieved. In a cost estimation for large-area CdTe solar cell modules, 140 yen/Wp (conversion efficiency: 11.0%, annual production: 100 MW) was obtained. (NEDO)

Multicenter clinical assessment of improved wearable multimodal convulsive seizure detectors.

Science.gov (United States)

Onorati, Francesco; Regalia, Giulia; Caborni, Chiara; Migliorini, Matteo; Bender, Daniel; Poh, Ming-Zher; Frazier, Cherise; Kovitch Thropp, Eliana; Mynatt, Elizabeth D; Bidwell, Jonathan; Mai, Roberto; LaFrance, W Curt; Blum, Andrew S; Friedman, Daniel; Loddenkemper, Tobias; Mohammadpour-Touserkani, Fatemeh; Reinsberger, Claus; Tognetti, Simone; Picard, Rosalind W

2017-11-01

New devices are needed for monitoring seizures, especially those associated with sudden unexpected death in epilepsy (SUDEP). They must be unobtrusive and automated, and provide false alarm rates (FARs) bearable in everyday life. This study quantifies the performance of new multimodal wrist-worn convulsive seizure detectors. Hand-annotated video-electroencephalographic seizure events were collected from 69 patients at six clinical sites. Three different wristbands were used to record electrodermal activity (EDA) and accelerometer (ACM) signals, obtaining 5,928 h of data, including 55 convulsive epileptic seizures (six focal tonic-clonic seizures and 49 focal to bilateral tonic-clonic seizures) from 22 patients. Recordings were analyzed offline to train and test two new machine learning classifiers and a published classifier based on EDA and ACM. Moreover, wristband data were analyzed to estimate seizure-motion duration and autonomic responses. The two novel classifiers consistently outperformed the previous detector. The most efficient (Classifier III) yielded sensitivity of 94.55%, and an FAR of 0.2 events/day. No nocturnal seizures were missed. Most patients had seizure frequency. When increasing the sensitivity to 100% (no missed seizures), the FAR is up to 13 times lower than with the previous detector. Furthermore, all detections occurred before the seizure ended, providing reasonable latency (median = 29.3 s, range = 14.8-151 s). Automatically estimated seizure durations were correlated with true durations, enabling reliable annotations. Finally, EDA measurements confirmed the presence of postictal autonomic dysfunction, exhibiting a significant rise in 73% of the convulsive seizures. The proposed multimodal wrist-worn convulsive seizure detectors provide seizure counts that are more accurate than previous automated detectors and typical patient self-reports, while maintaining a tolerable FAR for ambulatory monitoring. Furthermore, the multimodal system

Fluorescence Determination of Warfarin Using TGA-capped CdTe Quantum Dots in Human Plasma Samples.

Science.gov (United States)

Dehbozorgi, A; Tashkhourian, J; Zare, S

2015-11-01

In this study, some effort has been performed to provide low temperature, less time consuming and facile routes for the synthesis of CdTe quantum dots using ultrasound and water soluble capping agent thioglycolic acid. TGA-capped CdTe quantum dots were characterized through x-ray diffraction, transmission electron microscopy, Fourier transform infrared, ultraviolet-visible and fluorescence spectroscopy. The prepared quantum dots were used for warfarin determination based on the quenching of the fluorescence intensity in aqueous solution. Under the optimized conditions, the linear range of quantum dots fluorescence intensity versus the concentration of warfarin was 0.1-160.0 μM, with the correlation coefficient of 0.9996 and a limit of detection of 77.5 nM. There was no interference to coexisting foreign substances. The selectivity of the sensor was also tested and the results show that the developed method possesses a high selectivity for warfarin.

Photon counting and energy discriminating X-ray detectors. Benefits and applications

International Nuclear Information System (INIS)

Walter, David; Zscherpel, Uwe; Ewert, Uwe

2016-01-01

Since a few years the direct detection of X-ray photons into electrical signals is possible by usage of highly absorbing photo conducting materials (e.g. CdTe) as detection layer of an underlying CMOS semiconductor X-ray detector. Even NDT energies up to 400 keV are possible today, as well. The image sharpness and absorption efficiency is improved by the replacement of the unsharp scintillation layer (as used at indirect detecting detectors) by a photo conducting layer of much higher thickness. If the read-out speed is high enough (ca. 50 - 100 ns dead time) single X-ray photons can be counted and their energy measured. Read-out noise and dark image correction can be avoided. By setting energy thresholds selected energy ranges of the X-ray spectrum can be detected or suppressed. This allows material discrimination by dual-energy techniques or the reduction of image contributions of scattered radiation, which results in an enhanced contrast sensitivity. To use these advantages in an effective way, a special calibration procedure has to be developed, which considers also time dependent processes in the detection layer. This contribution presents some of these new properties of direct detecting digital detector arrays (DDAs) and shows first results on testing fiber reinforced composites as well as first approaches to dual energy imaging.

High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

International Nuclear Information System (INIS)

Odaka, Hirokazu; Ichinohe, Yuto; Takeda, Shin'ichiro; Fukuyama, Taro; Hagino, Koichi; Saito, Shinya; Sato, Tamotsu; Sato, Goro; Watanabe, Shin; Kokubun, Motohide; Takahashi, Tadayuki; Yamaguchi, Mitsutaka

2012-01-01

We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals

Energy Technology Data Exchange (ETDEWEB)

Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah

2018-05-08

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Comparative study on toxicity of extracellularly biosynthesized and laboratory synthesized CdTe quantum dots

Czech Academy of Sciences Publication Activity Database

Komínková, M.; Milosavljevic, V.; Vítek, Petr; Polanská, H.; Číhalová, K.; Dostálová, S.; Hynstová, V.; Guran, R.; Kopel, P.; Richtera, L.; Masarik, M.; Brtnický, M.; Kynický, J.; Zítka, O.; Adam, V.

2017-01-01

Roč. 241, JAN (2017), s. 193-200 ISSN 0168-1656 R&D Projects: GA MŠk(CZ) LO1415 Institutional support: RVO:67179843 Keywords : Quantum dots * Biosynthesis * Escherichia coli (E. coli) * CdTe * Toxicity Subject RIV: EI - Biotechnology ; Bionics OBOR OECD: Environmental biotechnology Impact factor: 2.599, year: 2016

Supply risks associated with CdTe and CIGS thin-film photovoltaics

International Nuclear Information System (INIS)

Helbig, Christoph; Bradshaw, Alex M.; Kolotzek, Christoph; Thorenz, Andrea; Tuma, Axel

2016-01-01

Highlights: • Supply risks associated with thin film photovoltaic technologies are considered. • Eleven supply risk indicators are used to evaluate Cd, Te, Cu, In, Ga, Se and Mo. • Indicator weighting based on peer assessment and an Analytic Hierarchy Process. • Various possibilities for the aggregation of elemental supply risks discussed. • Aggregated results show a marginally lower supply risk for CdTe than for CIGS. - Abstract: As a result of the global warming potential of fossil fuels there has been a rapid growth in the installation of photovoltaic generating capacity in the last decade. While this market is dominated by crystalline silicon, thin-film photovoltaics are still expected to make a substantial contribution to global electricity supply in future, due both to lower production costs and to recent increases in conversion efficiency. At present, cadmium telluride (CdTe) and copper-indium-gallium diselenide (CuIn_xGa_1_−_xSe_2) seem to be the most promising materials and currently have a share of ≈9% of the photovoltaic market. An expected stronger market penetration by these thin-film technologies raises the question as to the supply risks associated with the constituent elements. Against this background, we report here a semi-quantitative, relative assessment of mid- to long-term supply risk associated with the elements Cd, Te, Cu, In, Ga, Se and Mo. In this approach, the supply risk is measured using 11 indicators in the four categories “Risk of Supply Reduction”, “Risk of Demand Increase”, “Concentration Risk” and “Political Risk”. In a second step, the single indicator values, which are derived from publicly accessible databases, are weighted relative to each other specifically for the case of thin film photovoltaics. For this purpose, a survey among colleagues and an Analytic Hierarchy Process (AHP) approach are used, in order to obtain a relative, element-specific value for the supply risk. The aggregation of these

Toxicity assessment of zebrafish following exposure to CdTe QDs

Energy Technology Data Exchange (ETDEWEB)

Zhang, Wei, E-mail: wzhang@ecust.edu.cn [State Environmental Protection Key Laboratory of Environmental Risk Assessment and Control on Chemical Process, East China University of Science and Technology, Shanghai 200237 (China); Shanghai Key Laboratory of Functional Materials Chemistry, East China University of Science and Technology, Shanghai 200237 (China); School of Resource and Environmental Engineering, East China University of Science and Technology, Shanghai 200237 (China); Lin, Kuangfei, E-mail: kflin@ecust.edu.cn [State Environmental Protection Key Laboratory of Environmental Risk Assessment and Control on Chemical Process, East China University of Science and Technology, Shanghai 200237 (China); Shanghai Key Laboratory of Functional Materials Chemistry, East China University of Science and Technology, Shanghai 200237 (China); School of Resource and Environmental Engineering, East China University of Science and Technology, Shanghai 200237 (China); Miao, Youna [State Environmental Protection Key Laboratory of Environmental Risk Assessment and Control on Chemical Process, East China University of Science and Technology, Shanghai 200237 (China); Shanghai Key Laboratory of Functional Materials Chemistry, East China University of Science and Technology, Shanghai 200237 (China); School of Resource and Environmental Engineering, East China University of Science and Technology, Shanghai 200237 (China); Dong, Qiaoxiang; Huang, Changjiang; Wang, Huili [Zhejiang Provincial Key Lab for Technology and Application of Model Organisms, Wenzhou Medical College, Wenzhou 325035 (China); Guo, Meijin [State Key Laboratory of Bioreactor Engineering, East China University of Science and Technology, Shanghai 200237 (China); Cui, Xinhong [Shanghai Institute of Landscape Gardening, Shanghai 200233 (China)

2012-04-30

Highlights: Black-Right-Pointing-Pointer The LC{sub 50} of TGA-CdTe for zebrafish at 120 hpf was 185.9 nM. Black-Right-Pointing-Pointer Zebrafish exposed to TGA-CdTe resulted in lower hatch rate and more malformation. Black-Right-Pointing-Pointer Body length and heart beat of zebrafish declined after exposure to TGA-CdTe. Black-Right-Pointing-Pointer Larvae exposure to TGA-CdTe elicited a higher basal swimming rate. Black-Right-Pointing-Pointer Abnormal vascular of FLI-1 transgenic zebrafish larvae exposed to TGA-CdTe occurred. - Abstract: CdTe quantum dots (QDs) are nanocrystals of unique composition and properties that have found many new commercial applications; therefore, their potential toxicity to aquatic organisms has become a hot research topic. The lab study was performed to determine the developmental and behavioral toxicities to zebrafish under continuous exposure to low concentrations of CdTe QDs (1-400 nM) coated with thioglycolic acid (TGA). The results show: (1) the 120 h LC{sub 50} of 185.9 nM, (2) the lower hatch rate and body length, more malformations, and less heart beat and swimming speed of the exposed zebrafish, (3) the brief burst and a higher basal swimming rate of the exposed zebrafish larvae during a rapid transition from light-to-dark, and (4) the vascular hyperplasia, vascular bifurcation, vascular crossing and turbulence of the exposed FLI-1 transgenic zebrafish larvae.

Synthesis of surface molecular imprinting polymer on SiO{sub 2}-coated CdTe quantum dots as sensor for selective detection of sulfadimidine

Energy Technology Data Exchange (ETDEWEB)

Zhou, Zhiping; Ying, Haiqin; Liu, Yanyan [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Xu, Wanzhen, E-mail: xwz09@ujs.edu.cn [School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Yanfei; Luan, Yu [Zhenjiang Institute for Drug Control of Jiangsu Province, Zhenjiang 212003 (China); Lu, Yi; Liu, Tianshu [Zhenjiang Entry-Exit Inspection Quarantine Bureau, Zhenjiang 212008 (China); Yu, Shui [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China); Yang, Wenming, E-mail: ywm@ujs.edu.cn [School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China)

2017-05-15

Highlights: • Surface molecular imprinting technology and SiO{sub 2}-coated CdTe QDs were combined to prepare a novel fluorescent sensor for selective detection of sulfadimidine. • The relative fluorescent intensity weakened in a linear way with the increasing concentration of sulfadimidine in the range of 10–60 μmol L{sup −1}. • The practical application of the fluorescent MIP sensor was evaluated by means of analyzing sulfadimidine in the real milk samples. The recoveries were at the range of 90.3–99.6% and the relative standard deviation ranged from 1.9 to 3.1%. - Abstract: This paper demonstrates a facile method to synthesize surface molecular imprinting polymer (MIP) on SiO{sub 2}-coated CdTe QDs for selective detection of sulfadimidine (SM{sub 2}). The fluorescent MIP sensor was prepared using cadmium telluride quantum dots (CdTe QDs) as the material of fluorescent signal readout, sulfadimidine as template molecule, 3-aminopropyltriethoxysilane (APTES) as functional monomer and tetraethyloxysilane (TEOS) as cross-linking agent. The CdTe cores were embed in the silicon shells by a sol-gel reaction and then the molecular imprinting layers were immobilized on the surface of the SiO{sub 2}-coated CdTe QDs. Under the optimized conditions, the relative fluorescent intensity weakened in a linear way with the increasing concentration of sulfadimidine in the range of 10–60 μmol L{sup −1}. The practical application of the fluorescent MIP sensor was evaluated by means of analyzing sulfadimidine in the real milk samples. The recoveries were at the range of 90.3–99.6% and the relative standard deviation (RSD) ranged from 1.9 to 3.1%, which indicates the successful synthesis of the fluorescent MIP sensor. This sensor provides an alternative solution for selective determination of sulfadimidine from real milk samples.

Investigations of portable cadmium telluride (CdTe(Cl)) detectors for clinical studies with radioactive indicators

International Nuclear Information System (INIS)

Bojsen, J.

1985-01-01

The combination of small, portable γ-radiation-sensitive Cadmium Telluride (CdTE(Cl)) crystal detectors and portable solid state data storage memories makes it feasible to extend the measuring period in a number of clinical investigations based on the use of various radioisotopes and external detection. Blood sampling can be avoided in some cases. Continuous ambulatory monitoring of relevant physiological parameters is practicable, e.g. kidney function (GFR), left ventricular ejection fraction, subcutaneous blood flow, muscle blood flow and insulin absorption in diabetic patients. In the present methodological study the applicability of the 133-Xe washout technique to subcutaneous (s.c.) adipose tissue blood flow (SBF) has been investigated and adapted to the use of CdTe(Cl) detectors attached to the skin surface for the measurement of local 133-Xe-disappearance rate constants (k). Physical characterization of CdTe(Cl) detectors as γ-sensitive devices has been performed, and adequate counting sensitivities were found without detector energy-resolution properties. The CdTe(Cl) detectors are therefore suitable for single indicator studies. The measuring geometry of CdTe(Cl) detectors was studied and compared with that of stationary Sodium Iodide (NaI(Tl)) detectors in both phantom and in vivo investigations. The spatial properties of CdTe(Cl) detectors could to some extent be adjusted by pulse height discrimination and lead collimation. When long-term measurements were complicated by for instance physical activity of the patients, the small CdTe(Cl) detectors in general showed equal or better performance than the heavy and voluminous NaI(Tl) detectors. The free movement of the ambulatory patient and the avoidance of cable connections to stationary data-collecting systems gave improved possibilities for measurements of the relevant parameters. From this point of view, portable CdTe(Cl) detectors must be considered an important advance for radioactivity studies in

Study and modelling of the new generation Cd(Zn)Te X and gamma-ray detectors for space applications

International Nuclear Information System (INIS)

Dirks, Bob-Petrus-Franciscus

2006-01-01

therefore examined in detail as a function of the input capacitance and current, two important sources of noise. Since the chip is designed to be DC coupled to the crystals, knowledge of the leakage current (per pixel) inside multi-pixel Cd(Zn)Te detectors is very important. I developed an electronic circuit which allows an accurate measurement of the very low leakage currents per pixel (∼10"-"1"2 A) in 64 pixels Cd(Zn)Te detectors. Current maps are presented of different detectors at various operating conditions. Moreover, the relation between the current and temperature also allows obtaining activation energy maps of the impurities inside the crystal. In addition, the circuit is a tool to study the mechanical properties of the pixel-substrate contacts. With four fully operational 16-channels IDeF-X V1.0 ASICs connected to different 64 pixels CdTe and CdZnTe crystals, energy spectra are taken. From the results, optimal operation conditions (bias voltage, peaking time, temperature) are obtained to get the best energy resolution of the 60 keV energy peak of "2"4"1Am. For a single pixel CdTe detector (360 V bias, 22 C ) an excellent energy resolution of 1 keV (FWHM) is obtained. This value has also been achieved by several individual pixels of a 64 pixels indium diced CdTe detector (400 V bias, -18 C ). In order to better understand the detector behaviour and to predict detector performances, I constructed a full simulation chain. It starts with the particle interactions inside the crystal and continues the simulation up to the output of the read-out electronics. I combine GEANT4, to simulate individual interactions inside Cd(Zn)Te, and MGS-CdTe V1.0 to simulate charge carrier creation, transport, trapping effects and signal induction on the electrodes. By convolving these signals with the (numerical) impulse response function of IDeF-X V1.0, a complete detector response is generated. Simulated spectra are compared with measurements and show excellent agreement. GEANT4 and

Preparation and characterization of bifunctional dendrimer modified Fe{sub 3}O{sub 4}/CdTe nanoparticles with both luminescent and superparamagnetic properties

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiuling, E-mail: wxling_self@163.com [Department of Chemical and Biological Engineering, Suzhou University of Science and Technology, Suzhou 215009 (China); Gu, Yinjun; Dong, Shuling [Department of Chemical and Biological Engineering, Suzhou University of Science and Technology, Suzhou 215009 (China); Zhao, Qin [School of Chemistry and Chemical Engineering, Nantong University, Nantong, Jiangsu 226019 (China); Liu, Yongjian [Department of Chemical and Biological Engineering, Suzhou University of Science and Technology, Suzhou 215009 (China)

2015-10-15

Highlights: • The fluorescent superparamagnetic dendrimeric Fe{sub 3}O{sub 4}/CdTe nanoparticles are synthesized in this paper. • The synthesized nanocomposites maintain excellent magnetic properties. • The synthesized nanocomposites maintain highly luminescent markers with narrow emission bands. - Abstract: Magnetic nanoparticles Fe{sub 3}O{sub 4} were prepared by hydrothermal coprecipitation of ferric and ferrous ions using NaOH. The surface modification of Fe{sub 3}O{sub 4} nanoparticle by dendrimers has rendered the nanoparticle surface with enriched amine groups which facilitated the adsorption and conjugation of thioglycolic acid (TGA) modified CdTe quantum dots to form a stable hybrid nanostructure. Three generations (first generation: G0F, second generation: G1F, third generation: G3F) of bifunctional dendrimeric Fe{sub 3}O{sub 4}/CdTe nanoparticles were successfully prepared using this technique and characterized by microscopy. The optical and magnetic properties of the dendrimeric Fe{sub 3}O{sub 4}/CdTe nanoparticle were also investigated. The microscopic study reveals 3 different sizes for 3 generations, 16 nm (G0F), 31 nm (G1F) and 47 nm (G3F). Among three generations of nanoparticles, the G1F has the best optical property with a luminescent quantum yield of 25.6% and the G0F has the best magnetic property with a saturation magnetization of 19.3 emμ/g.

Band-edge photoluminescence in CdTe

International Nuclear Information System (INIS)

Horodysky, P.; Grill, R.; Hlidek, P.

2006-01-01

Near band-gap photoluminescence (PL) and absorption of bulk crystals of CdTe were measured over a wide range of temperatures (4-500 K). It is demonstrated that the high-temperature (above 150 K) PL intensity correlates with a lower quality of the samples and quasiparticle localization induced by the crystal potential fluctuations. The influence of the high absorption coefficient at the free-exciton resonance energy on the PL spectra is analytically studied by solving the diffusion-recombination equation. We show that the reabsorption of the radiation by the free-exciton states creates two illusory PL maxima. No dead surface layer is needed to explain reabsorption effects. The room-temperature PL maximum matches neither the free-exciton resonance nor the band-gap energy. The high temperature PL is explained by the recombination of electrons and holes localized on potential fluctuations. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Study of CdTe and HgCdTe thin films obtained by electrochemical methods

International Nuclear Information System (INIS)

Guillen, C.

1990-01-01

Cadmium telluride polycrystalline thin films were fabricated on SnO 2 -coated glass substrates by potentiostatic electrodeposition and characterized by X-ray diffraction, energy dispersive X-ray analyses (EDAX), optical and electrical measurements. The films dseposited at potentials more positive than -0.65 V vs.SCE were p-type but those deposited at more negative potentials were n-type. All CdTe thin films showed a band-gap energy about 1.45 eV and a large absorption coeffici-ent (a=10 5 cm -1 ) above de band edge. The addition of even small amounts of mercury to the CdTe produces higuer conductivity values and lower band-gap energies. We have prepared HgCdTe thin films where the band-gap energies ranged between 0.93 and 0.88 eV depending on the ratio of mercury to cadmium. Heat treatment at 300 0 C increases the crystalline diameter and alter the composition of the electrodeposited films, a decrease of the resistivity values was also observed. (Author)

p-type doping efficiency in CdTe: Influence of second phase formation

Science.gov (United States)

McCoy, Jedidiah J.; Swain, Santosh K.; Sieber, John R.; Diercks, David R.; Gorman, Brian P.; Lynn, Kelvin G.

2018-04-01

Cadmium telluride (CdTe) high purity, bulk, crystal ingots doped with phosphorus were grown by the vertical Bridgman melt growth technique to understand and improve dopant solubility and activation. Large net carrier densities have been reproducibly obtained from as-grown ingots, indicating successful incorporation of dopants into the lattice. However, net carrier density values are orders of magnitude lower than the solubility of P in CdTe as reported in literature, 1018/cm3 to 1019/cm3 [J. H. Greenberg, J. Cryst. Growth 161, 1-11 (1996) and R. B. Hall and H. H. Woodbury, J. Appl. Phys. 39(12), 5361-5365 (1968)], despite comparable starting charge dopant densities. Growth conditions, such as melt stoichiometry and post growth cooling, are shown to have significant impacts on dopant solubility. This study demonstrates that a significant portion of the dopant becomes incorporated into second phase defects as compounds of cadmium and phosphorous, such as cadmium phosphide, which inhibits dopant incorporation into the lattice and limits maximum attainable net carrier density in bulk crystals. Here, we present an extensive study on the characteristics of these second phase defects in relation to their composition and formation kinetics while providing a pathway to minimize their formation and enhance solubility.

Deposition of CdTe films under microgravity: Foton M3 mission

Energy Technology Data Exchange (ETDEWEB)

Benz, K.W.; Croell, A. [Freiburger Materialforschungszentrum FMF, Albert-Ludwigs-Universitaet Freiburg (Germany); Zappettini, A.; Calestani, D. [CNR Parma, Instituto Materiali Speciali per Elettronica e Magnetismo IMEM, Fontani Parma (Italy); Dieguez, E. [Universidad Autonoma de Madrid (Spain). Departamento de Fisica de Materiales; Carotenuto, L.; Bassano, E. [Telespazio Napoli, Via Gianturco 31, 80146 Napoli (Italy); Fiederle, M.

2009-10-15

Experiments of deposition of CdTe films have been carried out under microgravity in the Russian Foton M3 mission. The influence of gravity has been studied with these experiments and compared to the results of simulations. The measured deposition rate could be confirmed by the theoretical results for lower temperatures. For higher temperatures the measured thickness of the deposited films was larger compared to the theoretical data. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Clinical experience with the objective symmetry detector method for gammaencephalography

International Nuclear Information System (INIS)

Sachs, C.; Ericson, K.; Lind, M.

1982-01-01

The objective symmetry detector method for gammaencephalography previously described has been further developed. A rapid micro-computerized automatic measuring device has been constructed and the method used in screening of neurologic patients. The previously chosen classification boundaries between normal and pathologic isotope distributions were not entirely satisfactory for clinical screening of patients with neurologic symptoms. By use of new classification boundaries, 87 per cent of patients with brain tumours could be separated from patients with neurologic symptoms but without gross brain lesions and from neurologically healthy subjects. (Auth.)

Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications

Science.gov (United States)

Shintri, Shashidhar S.

Mercury cadmium telluride (MCT or Hg1-xCdxTe) grown by molecular beam epitaxy (MBE) is presently the material of choice for fabricating infrared (IR) detectors used in night vision based military applications. The focus of MCT epitaxy has gradually shifted since the last decade to using Si as the starting substrate since it offers several advantages. But the ˜19 % lattice mismatch between MCT and Si generates lots of crystal defects some of which degrade the performance of MCT devices. Hence thick CdTe films are used as buffer layers on Si to accommodate the defects. However, growth of high quality single crystal CdTe on Si is challenging and to date, the best MBE CdTe/Si reportedly has defects in the mid-105 cm -2 range. There is a critical need to reduce the defect levels by at least another order of magnitude, which is the main motivation behind the present work. The use of alternate growth technique called metal-organic vapor phase epitaxy (MOVPE) offers some advantages over MBE and in this work MOVPE has been employed to grow the various epitaxial films. In the first part of this work, conditions for obtaining high quality (211)B CdTe epitaxy on (211)Si were achieved, which also involved studying the effect of having additional intermediate buffer layers such as Ge and ZnTe and incorporation of in-situ thermal cyclic annealing (TCA) to reduce the dislocation density. A critical problem of Si cross-contamination due to 'memory effect' of different reactant species was minimized by introducing tertiarybutylArsine (TBAs) which resulted in As-passivation of (211)Si. The best 8-10 µm thick CdTe films on blanket (non-patterned) Si had dislocations around 3×105 cm-2, which are the best reported by MOVPE till date and comparable to the highest quality films available by MBE. In the second part of the work, nanopatterned (211)Si was used to study the effect of patterning on the crystal quality of epitaxial CdTe. In one such study, patterning of ˜20 nm holes in SiO2

Dewetted growth of CdTe in microgravity (STS-95)

International Nuclear Information System (INIS)

Fiederle, M.; Babentsov, V.; Benz, K.W.; Duffar, T.; Dusserre, P.; Corregidor, V.; Dieguez, E.; Delaye, P.; Roosen, G.; Chevrier, V.; Launay, J.C.

2004-01-01

Two CdTe crystals had been grown in microgravity during the STS-95 mission. The growth configuration was dedicated to obtain dewetting of the crystals and to achieve high quality material. Background for the performed experiments was based on the theory of the dewetting and previous experience. The after flight characterization of the crystals has demonstrated existence of the dewetting areas of the crystals and their improved quality regarding the earth grown reference sample. The samples had been characterized by EDAX, Synchrotron X-ray topography, Photoluminescence and Optical and IR microscopy. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Enhanced electrochemiluminescence of CdTe quantum dots with carbon nanotube film and its sensing of methimazole

International Nuclear Information System (INIS)

Hua Lijuan; Han Heyou; Chen Haibo

2009-01-01

A novel analytical method was reported based on electrochemiluminescence (ECL) of CdTe quantum dots (QDs) using carbon nanotube (CNT) modified glass carbon (GC) electrode. It was found that the CNT film on the GC electrode could greatly enhance the ECL intensity of CdTe QDs dispersed in aqueous solution, and the ECL peak potential and ECL onset potential both shifted positively. Influences of some factors on the ECL intensity were investigated using CNT modified GC electrode, and a high sensitive method for the determination of methimazole was developed under the optimal conditions. The ECL intensity decreased linearly in the concentration range of 1.0 x 10 -9 to 4.0 x 10 -7 M for methimazole with the relative coefficient of 0.995, which showed finer sensitivity than that at bare electrode. Thus, CNT modified electrode would have a great merit to expand the application of QD ECL

The improvement of near-term CdTe processing and product capabilities and establishment of next-generation CdTe technology. Annual technical progress report, September 1, 1995--August 31, 1996

Energy Technology Data Exchange (ETDEWEB)

Kester, J.; Albright, S. [Golden Photon, Inc., CO (United States)

1997-07-01

The potential of photovoltaics to become a major global business enterprise still lingers outside the limits of industrial capabilities. For the Cadmium Sulfide/Cadmium Telluride (CdS/CdTe) system this potential has continued to focus on improvements in efficiency, stability, and cost reduction. This triad is the primary objective of the present subcontract with NREL entitled {open_quotes}The Improvement of Near-term CdTe Processing and Product Capabilities & Establishment of Next Generation CdTe Technology{close_quotes}. This subcontract represents an intermediate stage of NREL`s plan to assist the growth of the photovoltaic industry in overcoming the scientific and technical barriers to commercialization. This report outlines the progress that has been made during the period of August 1995 through August 1996. The objectives of this subcontract are to improve processing methods, quantify and understand efficiency improvement mechanisms, meet life-testing goals, and address cadmium safety concerns. Task and subtask goals are defined to meet these objectives in specific areas. The approach to fulfilling the subcontract goals is through a balanced plan of process improvement and mechanism identification. These are carried out and continued through monitoring under various long term and accelerated stress conditions. GPI maintains an on-going awareness of all safety related issues, can in particular, those involving cadmium.

Effect of the value of bond energy on the defect formation in the samples of CdTe - HqTe system under the influence of irradiation

International Nuclear Information System (INIS)

Kramchenko, O.A.; Pashkovskij, N.V.

1984-01-01

The bonds break energy in solid solutions of the CdTe-HgTe system is calculated. The correctness of the statement that bonds strength in a chemical compound, particularly for the CdTe-HgTe system with decreases with the increase of atomic number. It is shown that in the process of transition from CdTe binary compound to solid solutions of the CdTe-HgTe system a part of Cd atoms is substituted by Hg atoms, which causes relative decrease of the number Cd-Te bonds. At the same time increased is the number of Cd-Te bonds which during irradiation break more probably than the Cd-Te bonds forming however only Frenkel close vapours annihilating during irradiation. During the experiment these defects lead to temperature region washout in which properties reconstruction at isochronous annealing begins. The beginning of annealing is shifted towards higher temperatures which has been observed in the course of investigation. X decrease for the Cdsub(x)Hgsub(1-x)Te solid solution increases the annealing temperature of radiation defects The results of theoretical calculations coincide with the experimental data and permit to confirm that the properties changes arising during irradiation of matters with weak chemical bonds can be conserved only at very low temperatures

Enhanced electrochemiluminescence quenching of CdS:Mn nanocrystals by CdTe QDs-doped silica nanoparticles for ultrasensitive detection of thrombin

Science.gov (United States)

Shan, Yun; Xu, Jing-Juan; Chen, Hong-Yuan

2011-07-01

This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO2 NPs). CdTe/SiO2 NPs were synthesized via the Stöber method and showed black bodies' strong absorption in a wide spectral range without excitonic emission, which made them excellent ECL quenchers. Within the effective distance of energy scavenging, the ECL quenching efficiency was dependent on the number of CdTe QDs doped into the silica NPs. Using ca. 200 CdTe QDs doped silica NPs on average of 40 nm in diameter as ECL quenching labels, attomolar detection of thrombin was successfully realized. The protein detection involves a competition binding event, based on thrombin replacing CdTe/SiO2 NPs labeled probing DNA which is hybridized with capturing aptamer immobilized on a CdS:Mn NCs film modified glassy carbon electrode surface by specific aptamer-protein affinity interactions. It results in the displacement of ECL quenching labels from CdS:Mn NCs film and concomitant ECL signal recovery. Owing to the high-content CdTe QDs in silica NP, the increment of ECL intensity (ΔIECL) and the concentration of thrombin showed a double logarithmic linear correlation in the range of 5.0 aM~5.0 fM with a detection limit of 1aM. And, the aptasensor hardly responded to antibody, bovine serum albumin (BSA), haemoglobin (Hb) and lysozyme, showing good detection selectivity for thrombin. This long-distance energy scavenging could have a promising application perspective in the detection of biological recognition events on a molecular level.This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO2 NPs). CdTe/SiO2 NPs were synthesized via

Study of the Mg incorporation in CdTe for developing wide band gap Cd1−xMgxTe thin films for possible use as top-cell absorber in a tandem solar cell

International Nuclear Information System (INIS)

Martínez, Omar S.; Millán, Aduljay Remolina; Huerta, L.; Santana, G.; Mathews, N.R.; Ramon-Garcia, M.L.; Morales, Erik R.; Mathew, X.

2012-01-01

Highlights: ► Thin films of Cd 1−x Mg x Te with high spatial uniformity and band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg. ► Obtained Cd 1−x Mg x Te films have the structural characteristics of the CdTe, evidence of the change in atomic scattering due to incorporation of Mg was observed. ► XRD and XPS data confirmed the incorporation of Mg in the lattice of CdTe. ► SEM images revealed the impact of Mg incorporation on the morphology of the films, the changes in grain size and grain morphology are noticeable. - Abstract: Thin films of Cd 1−x Mg x Te with band gap in the range of 1.6–1.96 eV were deposited by vacuum co-evaporation of CdTe and Mg on glass substrates heated at 300 °C. Different experimental techniques such as XRD, UV–vis spectroscopy, SEM, and XPS were used to study the effect of Mg incorporation into the lattice of CdTe. The band gap of the films showed a clear tendency to increase as the Mg content in the film is increased. The Cd 1−x Mg x Te films maintain all the structural characteristics of the CdTe, however, diminishing of intensity for the XRD patterns is observed due to both change in preferential orientation and change in atomic scattering due to the incorporation of Mg. SEM images showed significant evidences of morphological changes due to the presence of Mg. XRD, UV–vis spectroscopy, and XPS data confirmed the incorporation of Mg in the lattice of CdTe. The significant increase in band gap of CdTe due to incorporation of Mg suggests that the Cd 1−x Mg x Te thin film is a candidate material to use as absorber layer in the top-cell of a tandem solar cell.

Influences of the CdS nanoparticles grown strategies on CdTe nanorods array films: A comparison between successive ionic layer absorption and reaction and chemical bath deposition

International Nuclear Information System (INIS)

Wang, Jun; Zhou, Xiaoming; Lv, Pin; Yang, Lihua; Ding, Dong; Niu, Jiasheng; Liu, Li; Li, Xue; Fu, Wuyou; Yang, Haibin

2016-01-01

The cadmium sulfide (CdS) film is deposited on the surface of cadmium telluride (CdTe) nanorods (NRs) by two different methods, successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) techniques. The influence of the deposition parameters on the properties of the films is investigated. Compared to SILAR, CBD is a simple and time saving technique, which can ensure full coverage and better growth of CdS on the surface of CdTe NRs. The photovoltaic characteristics of CdS sensitized CdTe films are also investigated. It is found that the CdTe/CBD-CdS thin film demonstrates excellent photoelectrical properties, which is ascribed to the large absorption coefficient of the material, indicating the potential applications in solar cells.

Microstructured Optical Fiber for X-ray Detection

Science.gov (United States)

DeHaven, Stanton L.

2009-01-01

A novel scintillating optical fiber is presented using a composite micro-structured quartz optical fiber. Scintillating materials are introduced into the multiple inclusions of the fiber. This creates a composite optical fiber having quartz as a cladding with an organic scintillating material core. X-ray detection using these fibers is compared to a collimated cadmium telluride (CdTe) detector over an energy range from 10 to 40 keV. Results show a good correlation between the fiber count rate trend and that of the CdTe detector.

Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method

Science.gov (United States)

Bolotnikov, Aleskey E [South Setauket, NY; James, Ralph B [Ridge, NY

2010-07-20

The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.

Enhanced electrochemiluminescence quenching of CdS:Mn nanocrystals by CdTe QDs-doped silica nanoparticles for ultrasensitive detection of thrombin.

Science.gov (United States)

Shan, Yun; Xu, Jing-Juan; Chen, Hong-Yuan

2011-07-01

This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO(2) NPs). CdTe/SiO(2) NPs were synthesized via the Stöber method and showed black bodies' strong absorption in a wide spectral range without excitonic emission, which made them excellent ECL quenchers. Within the effective distance of energy scavenging, the ECL quenching efficiency was dependent on the number of CdTe QDs doped into the silica NPs. Using ca. 200 CdTe QDs doped silica NPs on average of 40 nm in diameter as ECL quenching labels, attomolar detection of thrombin was successfully realized. The protein detection involves a competition binding event, based on thrombin replacing CdTe/SiO(2) NPs labeled probing DNA which is hybridized with capturing aptamer immobilized on a CdS:Mn NCs film modified glassy carbon electrode surface by specific aptamer-protein affinity interactions. It results in the displacement of ECL quenching labels from CdS:Mn NCs film and concomitant ECL signal recovery. Owing to the high-content CdTe QDs in silica NP, the increment of ECL intensity (ΔI(ECL)) and the concentration of thrombin showed a double logarithmic linear correlation in the range of 5.0 aM∼5.0 fM with a detection limit of 1aM. And, the aptasensor hardly responded to antibody, bovine serum albumin (BSA), haemoglobin (Hb) and lysozyme, showing good detection selectivity for thrombin. This long-distance energy scavenging could have a promising application perspective in the detection of biological recognition events on a molecular level.

A scintillating gas detector for 2D dose measurements in clinical carbon beams.

Science.gov (United States)

Seravalli, E; de Boer, M; Geurink, F; Huizenga, J; Kreuger, R; Schippers, J M; van Eijk, C W E; Voss, B

2008-09-07

A two-dimensional position sensitive dosimetry system based on a scintillating gas detector has been developed for pre-treatment verification of dose distributions in hadron therapy. The dosimetry system consists of a chamber filled with an Ar/CF4 scintillating gas mixture, inside which two cascaded gas electron multipliers (GEMs) are mounted. A GEM is a thin kapton foil with copper cladding structured with a regular pattern of sub-mm holes. The primary electrons, created in the detector's sensitive volume by the incoming beam, drift in an electric field towards the GEMs and undergo gas multiplication in the GEM holes. During this process, photons are emitted by the excited Ar/CF4 gas molecules and detected by a mirror-lens-CCD camera system. Since the amount of emitted light is proportional to the dose deposited in the sensitive volume of the detector by the incoming beam, the intensity distribution of the measured light spot is proportional to the 2D hadron dose distribution. For a measurement of a 3D dose distribution, the scintillating gas detector is mounted at the beam exit side of a water-bellows phantom, whose thickness can be varied in steps. In this work, the energy dependence of the output signal of the scintillating gas detector has been verified in a 250 MeV/u clinical 12C ion beam by means of a depth-dose curve measurement. The underestimation of the measured signal at the Bragg peak depth is only 9% with respect to an air-filled ionization chamber. This is much smaller than the underestimation found for a scintillating Gd2O2S:Tb ('Lanex') screen under the same measurement conditions (43%). Consequently, the scintillating gas detector is a promising device for verifying dose distributions in high LET beams, for example to check hadron therapy treatment plans which comprise beams with different energies.

Defect creation rates in CdTe irradiated by electrons

International Nuclear Information System (INIS)

Caillot, M.

1978-01-01

Up to now, the defect creation rates in CdTe irradiated by electrons were unknown. They have been calculated for different electron kinetic energies. As the samples studied are thick, the energy loss when the electrons penetrate the material has been taken into account. The cross-sections of Cd and Te displacements vs the depth of electron penetration were determined for different electron kinetic energies, and the defect creation rates obtained for each sublattice. These creation rates have been compared with those deduced from experiments and it was found that the experimental creation rates were lower than the calculated ones. This discrepancy can be explained in terms of creation of neutral Frenkel pairs. (Auth.)

Precipitação seletiva de tamanhos em nanopartículas semicondutoras coloidais de CdTe e CdSe: um estudo por espectroscopia UV-VIS

Directory of Open Access Journals (Sweden)

Lívia Cristina de Souza Viol

2011-01-01

Full Text Available The post-preparative size-selective precipitation technique was applied in CdTe and CdSe semiconductor nanocrystals prepared via colloidal route in water. The synthesis of CdTe and CdSe nanoparticles and the effect of the post-preparative size-selective precipitation have been characterized mainly by mean of ultraviolet and visible absorption spectroscopy (UV-Vis. It was demonstrated that the size-selective precipitation are able to isolate particles of different sizes and purify the nanoparticles as well.

Preparation and purification of L-cysteine capped CdTe quantum dots and its self-recovery of degenerate fluorescence