Electron momentum density, band structure, and structural properties of SrS
Sharma, G., E-mail: gsphysics@gmail.com [University of Kota, Department of Pure and Applied Physics (India); Munjal, N.; Vyas, V. [Banasthali University, Department of Physics (India); Kumar, R.; Sharma, B. K. [University of Rajasthan, Department of Physics (India); Joshi, K. B. [MLS University, Department of Physics (India)
2013-10-15
The electron momentum density, the electronic band structure, and the structural properties of SrS are presented in this paper. The isotropic Compton profile, anisotropies in the directional Compton profiles, the electronic band structure and density of states are calculated using the ab initio periodic linear combination of atomic orbitals method with the CRYSTAL06 code. Structural parameters of SrS-lattice constants and bulk moduli in the B1 and B2 phases-are computed together with the transition pressure. The computed parameters are well in agreement with earlier investigations. To compare the calculated isotropic Compton profile, measurement on polycrystalline SrS is performed using 5Ci-{sup 241}Am Compton spectrometer. Additionally, charge transfer is studied by means of the Compton profiles computed from the ionic model. The nature of bonding in the isovalent SrS and SrO compounds is compared on the basis of equal-valenceelectron-density profiles and the bonding in SrS is found to be more covalent than in SrO.
Yu Wang
2002-01-01
Full Text Available Abstract:We investigate a theoretical model of molecular metalwire constructed from linear polynuclear metal complexes. In particular we study the linear Crn metal complex and Cr molecular metalwire. The electron density distributions of the model nanowire and the linear Crn metal complexes, with n = 3, 5, and 7, are calculated by employing CRYSTAL98 package with topological analysis. The preliminary results indicate that the bonding types between any two neighboring Cr are all the same, namely the polarized open-shell interaction. The pattern of electron density distribution in metal complexes resembles that of the model Cr nanowire as the number of metal ions increases. The conductivity of the model Cr nanowire is also tested by performing the band structure calculation.
Electron momentum density and band structure calculations of {alpha}- and {beta}-GeTe
Vadkhiya, Laxman [Department of Physics, University College of Science, M.L. Sukhadia University, Udaipur 313001, Rajasthan (India); Arora, Gunjan [Department of Physics, Techno India NJR Institute of Technology, Udaipur 313002, Rajasthan (India); Rathor, Ashish [Department of Physics, University College of Science, M.L. Sukhadia University, Udaipur 313001, Rajasthan (India); Ahuja, B.L., E-mail: blahuja@yahoo.com [Department of Physics, University College of Science, M.L. Sukhadia University, Udaipur 313001, Rajasthan (India)
2011-12-15
We have measured isotropic experimental Compton profile of {alpha}-GeTe by employing high energy (662 keV) {gamma}-radiation from a {sup 137}Cs isotope. To compare our experiment, we have also computed energy bands, density of states, electron momentum densities and Compton profiles of {alpha}- and {beta}-phases of GeTe using the linear combination of atomic orbitals method. The electron momentum density is found to play a major role in understanding the topology of bands in the vicinity of the Fermi level. It is seen that the density functional theory (DFT) with generalised gradient approximation is relatively in better agreement with the experiment than the local density approximation and hybrid Hartree-Fock/DFT. - Highlights: > Compton profile of {alpha}-GeTe using a 20 Ci {sup 137}Cs Compton spectrometer. > Compared experimental Compton data with density functional theory. > Reported energy bands and density of states of {alpha}- and {beta}-GeTe. > EVED profiles analysed to check the covalent character.
Wigner random banded matrices with sparse structure local spectral density of states
Fyodorov, Yu V; Izrailev, F M; Casati, G
1995-01-01
Random banded matrices with linearly increasing diagonal elements are recently considered as an attractive model for complex nuclei and atoms. Apart from early papers by Wigner \\cite{Wig} there were no analytical studies on the subject. In this letter we present analytical and numerical results for local spectral density of states (LDOS) for more general case of matrices with a sparsity inside the band. The crossover from the semicircle form of LDOS to that given by the Breit-Wigner formula is studied in detail.
Yamilov, Alexey; Cao, Hui
2003-08-01
We introduce a numerical recipe for calculating the density of the resonant states of the clusters of dielectric spheres. Using truncated multipole expansions (generalized multisphere Mie solution) we obtain the scattering matrix of the problem. By introducing an infinitesimal absorption in the spheres we express the dwell time of the electromagnetic wave in terms of the elements of the scattering matrix. Using the parameters in recent light localization experiments [Phys. Rev. Lett. 87, 153901 (2001)], we demonstrate that the density of the resonant states, related to the dwell time, shows the formation of the photonic band structure in small clusters of dielectric spheres as the small as five particles. Density of resonant states of a cluster of 32 spheres exhibits a well defined structure similar to the density of electromagnetic states of the infinite photonic crystal. Our results suggest that, due to the formation of small ordered clusters, a significant modification of the density of electromagnetic states can occur in a random collection of monodisperse spheres.
Band structure of semiconductors
Tsidilkovski, I M
2013-01-01
Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio
Electronic band structure and charge density wave transition in quasi-2D KMo6O17 purple bronze
Valbuena, M. A.; Avila, J.; Vyalikh, D. V.; Guyot, H.; Laubschat, C.; Molodtsov, S. L.; Asensio, M. C.
2008-03-01
High resolution angle-resolved photoemission of quasi-2D KMo6O17 purple bronze has been performed in the range from room temperature to 130 K, slightly above the charge density wave (CDW) transition (Tc = 110 K), and down to 35 K (well below Tc). In this paper we report a detailed study of how electronic band structure is affected by this transition driven by the hidden nesting scenario. The expected spectroscopic fingerprints of the CDW phase transition have been found and discussed according to the hidden one dimension and the development of a quasi-commensurate CDW. The excellent agreement between theory and our experimental results makes of potassium purple bronze a reference system for studying this type of instabilities.
Electronic band structure and charge density wave transition in quasi-2D KMo6O17 purple bronze
High resolution angle-resolved photoemission of quasi-2D KMo6O17 purple bronze has been performed in the range from room temperature to 130 K, slightly above the charge density wave (CDW) transition (Tc = 110 K), and down to 35 K (well below Tc). In this paper we report a detailed study of how electronic band structure is affected by this transition driven by the hidden nesting scenario. The expected spectroscopic fingerprints of the CDW phase transition have been found and discussed according to the hidden one dimension and the development of a quasi-commensurate CDW. The excellent agreement between theory and our experimental results makes of potassium purple bronze a reference system for studying this type of instabilities
The electronic structure of single-crystal WO3 and Na0.67WO3 (a sodium–tungsten bronze) has been measured using soft x-ray absorption and resonant soft x-ray emission oxygen K-edge spectroscopies. The spectral features show clear differences in energy and intensity between WO3 and Na0.67WO3. The x-ray emission spectrum of metallic Na0.67WO3 terminates in a distinct Fermi edge. The rigid-band model fails to explain the electronic structure of Na0.67WO3 in terms of a simple addition of electrons to the conduction band of WO3. Instead, Na bonding and Na 3s–O 2p hybridization need to be considered for the sodium–tungsten bronze, along with occupation of the bottom of the conduction band. Furthermore, the anisotropy in the band structure of monoclinic γ-WO3 revealed by the experimental spectra with orbital-resolved geometry is explained via density functional theory calculations. For γ-WO3 itself, good agreement is found between the experimental O K-edge spectra and the theoretical partial density of states of O 2p orbitals. Indirect and direct bandgaps of insulating WO3 are determined from extrapolating separations between spectral leading edges and accounting for the core–hole energy shift in the absorption process. The O 2p non-bonding states show upward band dispersion as a function of incident photon energy for both compounds, which is explained using the calculated band structure and experimental geometry. (paper)
Split Hubbard bands at low densities
Hansen, Daniel; Perepelitsky, Edward; Shastry, B. Sriram
2011-05-01
We present a numerical scheme for the Hubbard model that throws light on the rather esoteric nature of the upper and lower Hubbard bands, which have been invoked often in literature. We present a self-consistent solution of the ladder-diagram equations for the Hubbard model, and show that these provide, at least in the limit of low densities of particles, a vivid picture of the Hubbard split bands. We also address the currently topical problem of decay of the doublon states that are measured in optical trap studies, using both the ladder scheme and also an exact two-particle calculation of a relevant Green’s function.
Brouet, V.; Yang, W.L.; Zhou, X.J.; Hussain, Z.; Moore, R.G.; He, R.; Lu, D.H.; Shen, Z.X.; Laverock, J.; Dugdale, S.; Ru, N.; Fisher, I.R.
2010-02-15
We present a detailed ARPES investigation of the RTe{sub 3} family, which sets this system as an ideal 'textbook' example for the formation of a nesting driven Charge Density Wave (CDW). This family indeed exhibits the full range of phenomena that can be associated to CDW instabilities, from the opening of large gaps on the best nested parts of Fermi Surface (FS) (up to 0.4eV), to the existence of residual metallic pockets. ARPES is the best suited technique to characterize these features, thanks to its unique ability to resolve the electronic structure in k-space. An additional advantage of RTe{sub 3} is that the band structure can be very accurately described by a simple 2D tight-binding (TB) model, which allows one to understand and easily reproduce many characteristics of the CDW. In this paper, we first establish the main features of the electronic structure, by comparing our ARPES measurements with Linear Muffin-Tin Orbital band calculations. We use this to define the validity and limits of the TB model. We then present a complete description of the CDW properties and, for the first time, of their strong evolution as a function of R. Using simple models, we are able to reproduce perfectly the evolution of gaps in k-space, the evolution of the CDW wave vector with R and the shape of the residual metallic pockets. Finally, we give an estimation of the CDW interaction parameters and find that the change in the electronic density of states n(Ef), due to lattice expansion when different R ions are inserted, has the correct order of magnitude to explain the evolution of the CDW properties.
Valbuena, M A [Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Madrid (Spain); Avila, J; Asensio, M C [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, B.P. 48, 91192 Gif-sur-Yvette Cedex (France); Vyalikh, D V; Laubschat, C; Molodtsov, S L [Institut fuer Festkoerperphysik, Technische Universitaet Dresden, D-01062 Dresden (Germany); Guyot, H [LEPES, CNRS, BP 166, 38042 Grenoble Cedex 9 (France)], E-mail: mvbuena@icmm.csic.es
2008-03-15
High resolution angle-resolved photoemission of quasi-2D KMo{sub 6}O{sub 17} purple bronze has been performed in the range from room temperature to 130 K, slightly above the charge density wave (CDW) transition (T{sub c} = 110 K), and down to 35 K (well below T{sub c}). In this paper we report a detailed study of how electronic band structure is affected by this transition driven by the hidden nesting scenario. The expected spectroscopic fingerprints of the CDW phase transition have been found and discussed according to the hidden one dimension and the development of a quasi-commensurate CDW. The excellent agreement between theory and our experimental results makes of potassium purple bronze a reference system for studying this type of instabilities.
Microstrip microwave band gap structures
V Subramanian
2008-04-01
Microwave band gap structures exhibit certain stop band characteristics based on the periodicity, impedance contrast and effective refractive index contrast. These structures though formed in one-, two- and three-dimensional periodicity, are huge in size. In this paper, microstrip-based microwave band gap structures are formed by removing the substrate material in a periodic manner. This paper also demonstrates that these structures can serve as a non-destructive characterization tool for materials, a duplexor and frequency selective coupler. The paper presents both experimental results and theoretical simulation based on a commercially available finite element methodology for comparison.
Hussain, Zahid; Brouet, Veronique; Yang, Wanli; Zhou, Xingjiang; Hussain, Zahid; Moore, R.G.; He, R.; Lu, D. H.; Shen, Z.X.; Laverock, J.; Dugdale, S.B.; Ru, N.; Fisher, R.
2008-01-16
We present a detailed angle-resolved photoemission spectroscopy (ARPES) investigation of the RTe3 family, which sets this system as an ideal"textbook" example for the formation of a nesting driven charge density wave (CDW). This family indeed exhibits the full range of phenomena that can be associated to CDWinstabilities, from the opening of large gaps on the best nested parts of Fermi surface (up to 0.4 eV), to the existence of residual metallic pockets. ARPES is the best suited technique to characterize these features, thanks to its unique ability to resolve the electronic structure in k space. An additional advantage of RTe3 is that theband structure can be very accurately described by a simple two dimensional tight-binding (TB) model, which allows one to understand and easily reproduce many characteristics of the CDW. In this paper, we first establish the main features of the electronic structure by comparing our ARPES measurements with the linear muffin-tinorbital band calculations. We use this to define the validity and limits of the TB model. We then present a complete description of the CDW properties and of their strong evolution as a function of R. Using simple models, we are able to reproduce perfectly the evolution of gaps in k space, the evolution of the CDW wave vector with R, and the shape of the residual metallic pockets. Finally, we give an estimation of the CDWinteraction parameters and find that the change in the electronic density of states n (EF), due to lattice expansion when different R ions are inserted, has the correct order of magnitude to explain the evolution of the CDW properties.
Electronic band structure of beryllium oxide
Sashin, V A; Kheifets, A S; Ford, M J
2003-01-01
The energy-momentum resolved valence band structure of beryllium oxide has been measured by electron momentum spectroscopy (EMS). Band dispersions, bandwidths and intervalence bandgap, electron momentum density (EMD) and density of occupied states have been extracted from the EMS data. The experimental results are compared with band structure calculations performed within the full potential linear muffin-tin orbital approximation. Our experimental bandwidths of 2.1 +- 0.2 and 4.8 +- 0.3 eV for the oxygen s and p bands, respectively, are in accord with theoretical predictions, as is the s-band EMD after background subtraction. Contrary to the calculations, however, the measured p-band EMD shows large intensity at the GAMMA point. The measured full valence bandwidth of 19.4 +- 0.3 eV is at least 1.4 eV larger than the theory. The experiment also finds a significantly higher value for the p-to-s-band EMD ratio in a broad momentum range compared to the theory.
Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals
Stephenson, Chad A.; O'brien, William A.; Qi, Meng; Penninger, Michael; Schneider, William F.; Wistey, Mark A.
2016-04-01
Dilute germanium carbides (Ge1- x C x ) offer a direct bandgap for compact silicon photonics, but widely varying properties have been reported. This work reports improved band structure calculations for Ge1- x C x using ab initio simulations that employ the HSE06 exchange-correlation density functional. Contrary to Vegard's law, the conduction band minimum at Γ is consistently found to decrease with increasing C content, while L and X valleys change much more slowly. The calculated Ge bandgap is within 11% of experimental values. A decrease in energy at the Γ conduction band valley of (170 meV ± 50)/%C is predicted, leading to a direct bandgap for x > 0.008. These results indicate a promising material for Group IV lasers.
Band structure and nuclear dynamics
The relation between the Variable Moment of Inertia model and the Interacting Boson Model are discussed from a phenomenological viewpoint. New results on ground state mean-square radii in nuclei far from stability are reported, and a discussion of band structure extending to high angular momentum states and methods of extracting information on the underlying dynamics is given
Hayami, Satoru; Ozawa, Ryo; Motome, Yukitoshi
2016-07-01
Magnetic orders characterized by multiple ordering vectors harbor noncollinear and noncoplanar spin textures and can be a source of unusual electronic properties through the spin Berry phase mechanism. We theoretically show that such multiple-Q states are stabilized in itinerant magnets in the form of superpositions of collinear up-up-down-down (UUDD) spin states, which accompany the density waves of vector and scalar chirality. The result is drawn by examining the ground state of the Kondo lattice model with classical localized moments, especially when the Fermi surface is tuned to be partially nested by the symmetry-related commensurate vectors. We unveil the instability toward a double-Q UUDD state with vector chirality density waves on the square lattice and a triple-Q UUDD state with scalar chirality density waves on the triangular lattice, using the perturbative theory and variational calculations. The former double-Q state is also confirmed by large-scale Langevin dynamics simulations. We also show that, for a sufficiently large exchange coupling, the chirality density waves can induce rich nontrivial topology of electronic structures, such as the massless Dirac semimetal, Chern insulator with quantized topological Hall response, and peculiar edge states which depend on the phase of chirality density waves at the edges.
Photonic band gap structure simulator
Chen, Chiping; Shapiro, Michael A.; Smirnova, Evgenya I.; Temkin, Richard J.; Sirigiri, Jagadishwar R.
2006-10-03
A system and method for designing photonic band gap structures. The system and method provide a user with the capability to produce a model of a two-dimensional array of conductors corresponding to a unit cell. The model involves a linear equation. Boundary conditions representative of conditions at the boundary of the unit cell are applied to a solution of the Helmholtz equation defined for the unit cell. The linear equation can be approximated by a Hermitian matrix. An eigenvalue of the Helmholtz equation is calculated. One computation approach involves calculating finite differences. The model can include a symmetry element, such as a center of inversion, a rotation axis, and a mirror plane. A graphical user interface is provided for the user's convenience. A display is provided to display to a user the calculated eigenvalue, corresponding to a photonic energy level in the Brilloin zone of the unit cell.
High-energy band structure of gold
Christensen, N. Egede
1976-01-01
The band structure of gold for energies far above the Fermi level has been calculated using the relativistic augmented-plane-wave method. The calculated f-band edge (Γ6-) lies 15.6 eV above the Fermi level is agreement with recent photoemission work. The band model is applied to interpret...
High-spin states of 79Br have been studied in the reaction 76Ge(7Li, 4nγ) at 32 MeV. A gamma-detector array with twelve Compton-suppressed HPGe detectors was used. The positive-parity yrast states, interpreted as a rotationally aligned g(9(2)) proton band, and the negative-parity ground state band have been extended to spins of (33(2+)) and (25(2-)), respectively. Lifetime measurements indicate that both bands have a similar quadrupole deformation of β2 ∼ 0.2. The positive-parity α = -(1(2)) band has been identified. Several new inter-band transitions are observed. A cranked-shell model analysis shows that the νg(9(2)) and πg(9(2)) alignments occur in the positive-parity and the negative-parity bands at rotational frequencies of ℎω ∼ 0.6 and 0.4 MeV, respectively. The level energies and the electromagnetic properties of the g(9(2)) band can be well reproduced by a particle-rotor model calculation with an axially symmetric core
Density Measurements in Air by Optically Exciting the Cordes Bands of I2
Balla, R. Jeffrey; Exton, Reginald J.
2000-01-01
We describe an optical method based on laser-induced fluorescence for obtaining instantaneous measurements of density along a line in low-density air seeded with I2. The Cordes bands of I2 (D(sup 1)sigma(sup +, sub u)) left arrow X(sup 1)sigma(sup +, sub g)) are excited with a tunable ArF excimer laser. air densities in the range (0.1-6.5) x 10(exp 17) cm(exp -3) are measured over 295-583 K using the density-dependent emission ratio of two emission bands of I2; the 340 nm bands and the diffuse-structured McLennan bands near 320 nm.
Maximizing band gaps in plate structures
Halkjær, Søren; Sigmund, Ole; Jensen, Jakob Søndergaard
2006-01-01
Band gaps, i.e., frequency ranges in which waves cannot propagate, can be found in elastic structures for which there is a certain periodic modulation of the material properties or structure. In this paper, we maximize the band gap size for bending waves in a Mindlin plate. We analyze an infinite...
Modeling charged defects inside density functional theory band gaps
Density functional theory (DFT) has emerged as an important tool to probe microscopic behavior in materials. The fundamental band gap defines the energy scale for charge transition energy levels of point defects in ionic and covalent materials. The eigenvalue gap between occupied and unoccupied states in conventional DFT, the Kohn–Sham gap, is often half or less of the experimental band gap, seemingly precluding quantitative studies of charged defects. Applying explicit and rigorous control of charge boundary conditions in supercells, we find that calculations of defect energy levels derived from total energy differences give accurate predictions of charge transition energy levels in Si and GaAs, unhampered by a band gap problem. The GaAs system provides a good theoretical laboratory for investigating band gap effects in defect level calculations: depending on the functional and pseudopotential, the Kohn–Sham gap can be as large as 1.1 eV or as small as 0.1 eV. We find that the effective defect band gap, the computed range in defect levels, is mostly insensitive to the Kohn–Sham gap, demonstrating it is often possible to use conventional DFT for quantitative studies of defect chemistry governing interesting materials behavior in semiconductors and oxides despite a band gap problem
Electron charge densities at conduction-band edges of semiconductors
We demonstrate that both the empirical pseudopotential method (EPM) and the linear combination of atomiclike orbitals (LCAO) approach are capable of producing consistent electronic charge distributions in a compound semiconductor. Since the EPM approach is known to produce total valence electron charge densities which compare well with experimental x-ray data (e.g., Si), this work serves as a further test for the LCAO method. In particular, the EPM scheme, which uses an extended plane-wave basis, and the LCAO scheme, which employs a localized Gaussian basis, are used, with the same empirical potential as input, to analyze both the total valence electron charge density and the charge density of the first conduction band at the GAMMA, L, and X k points of the Brillouin zone. These charge densities are decomposed into their s-, p-, and d-orbital contributions, and this information is used to interpret the differences in the topologies of the conduction bands at GAMMA, L, and X. Such differences are crucial for a comprehensive understanding of interstitial impurities and the response of specific band states to perturbations in compound semiconductors
Pellegrini, B.; Marconcini, P.; Macucci, M.; Fiori, G.; Basso, G.
2016-05-01
We present a model for 1/f noise in graphene based on an analysis of the effect of charge trapping and detrapping events on the fluctuations of the number of charge carriers. Inclusion of a Gaussian distribution of fluctuations of the electrostatic potential enables us to reproduce all the various experimentally observed behaviors of the flicker noise power spectral density as a function of carrier density, both for monolayer and bilayer graphene. The key feature of a flicker noise minimum at the Dirac point that appears in bilayer graphene and sometimes also in monolayer graphene is explained in terms of the disappearance, when the number of electrons equals that of holes, of the carrier number fluctuations induced by trapping events. Such a disappearance is analyzed with two different approaches, in order to gain a better understanding of the physical origin of the effect, and to make some considerations about possible analogous phenomena in other semiconductors.
Tezuka, Masaki; Arita, Ryotaro; Aoki, Hideo
2005-01-01
Density-matrix renormalization group is used to study the pairing when both of electron-electron and electron-phonon interactions are strong in the Holstein-Hubbard model at half-filling in a region intermediate between the adiabatic (Migdal's) and antiadiabatic limits. We have found: (i) the pairing correlation obtained for a one-dimensional system is nearly degenerate with the CDW correlation in a region where the phonon-induced attraction is comparable with the electron-electron repulsion,...
Electronic band structures of binary skutterudites
The electronic properties of complex binary skutterudites, MX3 (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures
Electronic band structures of binary skutterudites
Khan, Banaras [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Aliabad, H.A. Rahnamaye [Department of Physics, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Saifullah [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Jalali-Asadabadi, S. [Department of Physics, Faculty of Science, University of Isfahan (UI), 81744 Isfahan (Iran, Islamic Republic of); Khan, Imad [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Ahmad, Iftikhar, E-mail: ahma5532@gmail.com [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan)
2015-10-25
The electronic properties of complex binary skutterudites, MX{sub 3} (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures.
Michiardi, Matteo; Aguilera, Irene; Bianchi, Marco;
2014-01-01
The bulk band structure of Bi2Te3 has been determined by angle-resolved photoemission spectroscopy and compared to first-principles calculations. We have performed calculations using the local density approximation (LDA) of density functional theory and the one-shot GW approximation within the all......-electron full-potential linearized augmented-plane-wave (FLAPW) formalism, fully taking into account spin-orbit coupling. Quasiparticle effects produce significant changes in the band structure of Bi2Te3 when compared to LDA. Experimental and calculated results are compared in the spectral regions where...... distinct differences between the LDA and GW results are present. Overall a superior agreement with GW is found, highlighting the importance of many-body effects in the band structure of this family of topological insulators....
One-Dimensional Anisotropic Band Gap Structure
无
2000-01-01
The band gap structure of one-dimensional anisotropic photonic crystal has been studied by means of the transfer matrix formalism. From the analytic expressions and numeric calculations we see some general characteristics of the band gap structure of anisotropic photonic crystals, each band separates into two branches and the two branches react to polarization sensitively. In the practical case of oblique incidence, gaps move towards high frequency when the angle of incidence increases. Under some special conditions, the two branches become degenerate again.
Delin, A
2002-01-01
We have performed a systematic density-functional study of the mercury chalcogenide compounds $\\beta$-HgS, HgSe, and HgTe using an all-electron full-potential linear muffin-tin orbital (FP-LMTO) method. We find that, in the zinc-blende structure, both HgSe and HgTe are semimetals whereas $\\beta$-HgS has a small spin-orbit induced band gap. Our calculated relativistic photoemission and inverse photoemission spectra (PES and IPES, respectively) reproduce very well the most recently measured spectra, as do also our theoretical optical spectra. In contrast to the normal situation, we find that the local density approximation (LDA) to the density functional gives calculated equilibrium volumes in much better agreement with experiment than does the generalized gradient corrected functional (GGA). We also address the problem of treating relativistic $p$ electrons with methods based on a scalar-relativistic basis set, and show that the effect is rather small for the present systems.
Band Structure and Optical Properties of Ordered AuCu3
Skriver, Hans Lomholt; Lengkeek, H. P.
1979-01-01
initio band structure obtained by the relativistic linear muffin-tin orbitals method. The band calculation reveals that ordered AuCu3 has distinct copper and gold d bands positioned in and hybridizing with an s band common to copper and gold. The calculated state density is found to be in good agreement...
Phononic band gap structures as optimal designs
Jensen, Jakob Søndergaard; Sigmund, Ole
2003-01-01
In this paper we use topology optimization to design phononic band gap structures. We consider 2D structures subjected to periodic loading and obtain the distribution of two materials with high contrast in material properties that gives the minimal vibrational response of the structure. Both in...
Development of S-band accelerating structure
In Pohang Accelerator Laboratory (PAL) in Korea construction of XFEL (X-ray Free electron Lazar) institution is under construction aiming at the completion in 2014. Energy 10 GeV of the linac part of this institution and main frequency are planned in S-band (2856 MHz), and about 178 S-band 3m accelerating structures are due to be used for this linac. The oscillation of an X-ray laser requires very low emittance electron beam. On the other hand, since the accelerating structure which accelerates an electron beam has a feed port of microwave (iris), the electromagnetic field asymmetry of the microwave feeding device called coupler worsens the emittance of an electron beam. MHI manufactured two kinds of S-band accelerating structures with which the electromagnetic field asymmetry of coupler cavity was compensated for PALXFEL linac. We report these accelerating structures. (author)
Band alignment of semiconductors from density-functional theory and many-body perturbation theory
Hinuma, Yoyo; Grüneis, Andreas; Kresse, Georg; Oba, Fumiyasu
2014-10-01
The band lineup, or alignment, of semiconductors is investigated via first-principles calculations based on density functional theory (DFT) and many-body perturbation theory (MBPT). Twenty-one semiconductors including C, Si, and Ge in the diamond structure, BN, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe in the zinc-blende structure, and GaN and ZnO in the wurtzite structure are considered in view of their fundamental and technological importance. Band alignments are determined using the valence and conduction band offsets from heterointerface calculations, the ionization potential (IP) and electron affinity (EA) from surface calculations, and the valence band maximum and conduction band minimum relative to the branch point energy, or charge neutrality level, from bulk calculations. The performance of various approximations to DFT and MBPT, namely the Perdew-Burke-Ernzerhof (PBE) semilocal functional, the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, and the GW approximation with and without vertex corrections in the screened Coulomb interaction, is assessed using the GWΓ1 approximation as a reference, where first-order vertex corrections are included in the self-energy. The experimental IPs, EAs, and band offsets are well reproduced by GWΓ1 for most of the semiconductor surfaces and heterointerfaces considered in this study. The PBE and HSE functionals show sizable errors in the IPs and EAs, in particular for group II-VI semiconductors with wide band gaps, but are much better in the prediction of relative band positions or band offsets due to error cancellation. The performance of the GW approximation is almost on par with GWΓ1 as far as relative band positions are concerned. The band alignments based on average interfacial band offsets for all pairs of 17 semiconductors and branch point energies agree with explicitly calculated interfacial band offsets with small mean absolute errors of both ˜0.1eV, indicating a
Band Structure Based Analysis of Certain Photonic Crystal Structures
Wolff, Christian
2011-01-01
Photonic crystals are periodic dielectric structures that may exhibit a complete photonic band gap. First, I discuss geometric properties of the band structure such as band edges. In a second part, I present work on photonic Wannier functions and their use for solving the wave equation. The third part is devoted to applications of the presented methods: A polarization resolved transmission experiment of opel films and an analogy experiment for spontaneous emission inside a photonic crystal.
The band structures of 121,123I nuclei have been studied using a version of the particle-rotor-model in which the experimental excitation energies of the neighbouring (A-1) cores can be fed directly as input parameters. The calculations have been carried out with axially symmetric Nilsson potential with both prolate and oblate deformations. The parameters of the model have been chosen from earlier theoretical work and experimental odd-even mass differences. Only the Coriolis attenuation factor has been treated as adjustable parameter. The theoretical band structures are in very good agreement with the available experimental data. (orig.)
Band structure of CdTe under high pressure
The band structures and density of states of cadmium telluride (CdTe) under various pressures ranging from normal to 4.5 Mbar are obtained. The electronic band structure at normal pressure of CdTe (ZnS structure) is analyzed and the direct band gap value is found to be 1.654 eV. CdTe becomes metal and superconductor under high pressure but before that it undergoes structural phase transition from ZnS phase to NaCl phase. The equilibrium lattice constant, bulk modulus and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(EF)) gets enhanced after metallization, which leads to the superconductivity in CdTe. In our calculation, the metallization pressure (PM = 1.935 Mbar) and the corresponding reduced volume ((V/V0)M = 0.458) are estimated. Metallization occurs via direct closing of band gap at Γ point. (author)
Band structure engineering in organic semiconductors.
Schwarze, Martin; Tress, Wolfgang; Beyer, Beatrice; Gao, Feng; Scholz, Reinhard; Poelking, Carl; Ortstein, Katrin; Günther, Alrun A; Kasemann, Daniel; Andrienko, Denis; Leo, Karl
2016-06-17
A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Implementation of this approach in organic semiconductors has been hindered by strong localization of the electronic states in these materials. We show that the influence of so far largely ignored long-range Coulomb interactions provides a workaround. Photoelectron spectroscopy confirms that the ionization energies of crystalline organic semiconductors can be continuously tuned over a wide range by blending them with their halogenated derivatives. Correspondingly, the photovoltaic gap and open-circuit voltage of organic solar cells can be continuously tuned by the blending ratio of these donors. PMID:27313043
Design of smooth orthogonal wavelets with beautiful structure from 2-band to 4-band
无
2006-01-01
A complete algorithm to design 4-band orthogonal wavelets with beautiful structure from 2-band orthogonal wavelets is presented. For more smoothness, the conception of transfer vanishing moment is introduced by transplanting the requirements of vanishing moment from the 4-band wavelets to the 2-band ones. Consequently, the design of 4-band orthogonal wavelets with P vanishing moments and beautiful structure from 2-band ones with P transfer vanishing moments is completed.
High spin band structure in 139Nd
XU Qiang; ZHU Sheng-Jiang; CHE Xing-Lai; DING Huai-Bo; GU Long; ZHU Li-Hua; WU Xiao-Guang; LIU Ying; HE Chuang-Ye; LI Li-Hua; PAN Bo; HAO Xin; LI Guang-Sheng
2009-01-01
High-spin states in 139Nd nucleus have been reinvestigated with the reaction 128Te (16O, 5n) at a beam energy of 90 MeV. The level scheme has been expanded with spin up to 47/2 h. At the low spin states,the yrast collective structure built on the vh(-1)(11/2) multiplet shows a transitional shape with γ≈32° according to calculations of the triaxial rotor-plus-particle model. Three collective oblate bands with γ～-60° at the high spin states were identified for the first time. A band crossing is observed around hw ～0.4 MeV in one oblate band based on the 25/2- level.
Hubbard-U band-structure methods
Albers, R.C.; Christensen, Niels Egede; Svane, Axel
2009-01-01
The last decade has seen a large increase in the number of electronic-structure calculations that involve adding a Hubbard term to the local-density approximation band-structure Hamiltonian. The Hubbard term is then determined either at the mean-field level or with sophisticated many...... inconsistent with what the calculations actually do. Although many of these calculations are often treated as essentially first-principles calculations, in fact, we argue that they should be viewed from an entirely different point of view, namely, as based on phenomenological many-body corrections to band-structure......-body techniques such as using dynamical mean-field theory. We review the physics underlying these approaches and discuss their strengths and weaknesses in terms of the larger issues of electronic structure that they involve. In particular, we argue that the common assumptions made to justify such calculations are...
The band-gap enhanced photovoltaic structure
Tessler, Nir
2016-05-01
We critically examine the recently suggested structure that was postulated to potentially add 50% to the photo-conversion efficiency of organic solar cells. We find that the structure could be realized using stepwise increase in the gap as long as the steps are not above 0.1 eV. We also show that the charge extraction is not compromised due to an interplay between the contact's space charge and the energy level modification, which result in a flat energy band at the extracting contact.
Coral Skeleton Density Banding: Biotic Response to Changes in Sea Surface Temperature
Hill, C. A.; Sivaguru, M.; Fried, G. A.; Fouke, B. W.
2010-12-01
Density bands in the CaCO3 (aragonite) skeleton of scleractinian corals are commonly used as chronometers, where crystalline couplets of high and low density bands represent the span of one year. Isotopic analysis of these density bands provides a sensitive reconstructive tool for paleoclimatology and paleoecology. However, the detailed biotic mechanisms controlling coral skeleton aragonite nucleation and crystallization events and resulting skeletal growth rate remain uncertain. The coral tissue organic matrix, composed of macromolecules secreted by the calicoblastic ectoderm, is closely associated with skeletal precipitation and is itself incorporated into the skeleton. We postulate that density banding is primarily controlled by changes in the rate of aragonite crystal precipitation mediated by the coral holobiont response to changes in sea surface temperature (SST). To test this hypothesis, data were collected from coral skeleton-tissue biopsies (2.5 cm in diameter) extracted from four species of Montastraea growing on the fringing reef tract of Curacao, Netherlands Antilles. Annual mean variation in SST on Curacao range from 29o in mid-September to 26o C in late February. Samples were collected at strategic time periods spanning the 3o C annual variations in SST. Our nanometer-scale optical analyses of skeletal morphology have revealed consistent changes between high- and low-skeletal density bands, resulting in an 11% increase in the volume of aragonite precipitated in high-density skeletal bands. The re-localization and/or change in abundance of mucus, carbonic anhydrase (a molecule that catalyzes the hydration of carbon dioxide), calmodulin (a calcium-binding protein) and the change in density of gastrodermal symbiotic dinoflagellates has permitted estimates of seasonally-fluctuating carbon allocation by the coral holobiont in response to changing environmental conditions. This digital reconstruction of over 2000 images of one-micron-thick histological
Nonequilibrium band structure of nano-devices
Hackenbuchner, S.; Sabathil, M.; Majewski, J. A.; Zandler, G.; Vogl, P.; Beham, E.; Zrenner, A.; Lugli, P.
2002-03-01
A method is developed for calculating, in a consistent manner, the realistic electronic structure of three-dimensional (3-D) heterostructure quantum devices under bias and its current density close to equilibrium. The nonequilibrium electronic structure is characterized by local Fermi levels that are calculated self-consistently. We have applied this scheme to predict asymmetric Stark shifts and tunneling of confined electrons and holes in single-dot GaAs/InGaAs photodiodes.
Emission bands of phosphorus and calculation of band structure of rare earth phosphides
The method of x-ray emission spectroscopy has been used to investigate the electronic structure of monophosphides of rare-earth metals (REM). The fluorescence K bands of phosphorus have been obtained in LaP, PrP, SmP, GdP, TbP, DyP, HoP, ErP, TmP, YbP, and LuP and also the Lsub(2,3) bands of phosphorus in ErP, TmP, YbP, and LuP. Using the Green function technique involving the muffin-tin potential, the energy spectrum for ErP has been calculated in the single-electron approximation. The hystogram of electronic state distribution N(E) is compared with the experimental K and Lsub(2,3) bands of phosphorus in ErP. The agreement between the main details of N(E) and that of x-ray spectra allows to state that the model used provides a good description of the electron density distribution in crystals of REM monophosphides. In accordance with the character of the N(E) distribution the compounds under study are classified as semimetals or semiconductors with a very narrow forbidden band
Analysis of the electronic structure of crystals through band structure unfolding
Gordienko, A. B.; Kosobutsky, A. V.
2016-03-01
In this work, we consider an alternative implementation of the band structure unfolding method within the framework of the density functional theory, which combines the advantages of the basis of localized functions and plane waves. This approach has been used to analyze the electronic structure of the ordered CuCl x Br1- x copper halide alloys and F 0 center in MgO that enables us to reveal qualitatively the features remaining hidden when using the standard supercell method, because of the complex band structure of systems with defects.
Phononic First Band Gap of Quaternary Layered Periodic Structure with the Lumped-Mass Method
Chen Yuan
2014-01-01
Full Text Available Existing band gap analysis is mostly focused on the binary structure, while the researches on the quaternary layered periodic structure are still lacking. In this paper, the unidimensional lumped-mass method in the phonic crystal theory is firstly improved so that the material viscoelasticity can be taken into consideration. Then, the binary layered periodic structure is converted into a quaternary one and band gaps appear at low frequency range. Finally, the effects of density, elastic modulus, damping ratio, and the thickness of single material on the first band gap of the quaternary layered periodic structure are analyzed after the algorithm is promoted. The research findings show that effects of density, elastic modulus, and thickness of materials on the first band gap are considerable but those of damping ratio are not so distinct. This research provides theoretical bases for band gap design of the quaternary layered periodic structure.
Electron density and carriers of the diffuse interstellar bands
Gnacinski, P.; Sikorski, J. K.; Galazutdinov, G. A.
2007-01-01
We have used the ionisation equilibrium equation to derive the electron density in interstellar clouds in the direction to 13 stars. A linear relation was found, that allows the determination of the electron density from the Mg I and Mg II column densities in diffuse clouds. The comparison of normalised equivalent width of 12 DIBs with the electron density shows that the DIBs equivalent width do not change with electron density varying in the range ne=0.01-2.5 cm^-3. Therefore the DIBs carrie...
Electronic band structure of tetracene-TCNQ and perylene-TCNQ compounds
Shokaryev, I.; Buurma, A. J. C.; Jurchescu, O. D.; Uijttewaal, M. A.; de Wijs, G.A.; Palstra, T. T. M.; Groot, R.A. de
2008-01-01
The relationship between the crystal structures, band structures, and electronic properties of acene-TCNQ complexes has been investigated. We focus on the newly synthesized crystals of the charge-transfer salt tetracene-TCNQ and similar to it. perylene-TCNQ, potentially interesting for realization of ambipolar transport. The band structures were calculated from first principles using density-functional theory (DFT). Despite the similarity in the crystal structures of the acene-TCNQ complexes ...
First principle study of band structure of SrMO3 perovskites
Daga, Avinash; Sharma, Smita
2016-05-01
First principle study of band structure calculations in the local density approximations (LDA) as well as in the generalized gradient approximations (GGA) have been used to determine the electronic structure of SrMO3 where M stands for Ti, Zr and Mo. Occurrence of band gap proves SrTiO3 and SrZrO3 to be insulating. A small band gap is observed in SrMoO3 perovskite signifies it to be metallic. Band structures are found to compare well with the available data in the literature showing the relevance of this approach. ABINIT computer code has been used to carry out all the calculations.
A Theoretical Structure of High School Concert Band Performance
Bergee, Martin J.
2015-01-01
This study used exploratory (EFA) and confirmatory factor analysis (CFA) to verify a theoretical structure for high school concert band performance and to test that structure for viability, generality, and invariance. A total of 101 university students enrolled in two different bands rated two high school band performances (a "first"…
Electronic structure and electron momentum density in TiSi
Ghaleb, A.M. [Department of Physics, College of Science, University of Kirkuk, Kirkuk (Iraq); Mohammad, F.M. [Department of Physics, College of Science, University of Tikreet, Tikreet (Iraq); Sahariya, Jagrati [Department of Physics, University College of Science, M.L. Sukhadia University, Udaipur 313001, Rajasthan (India); Sharma, Mukesh [Physics Division, Forensic Science Laboratory, Jaipur, Rajasthan (India); Ahuja, B.L., E-mail: blahuja@yahoo.com [Department of Physics, University College of Science, M.L. Sukhadia University, Udaipur 313001, Rajasthan (India)
2013-03-01
We report the electron momentum density in titanium monosilicide using {sup 241}Am Compton spectrometer. Experimental Compton profile has been compared with the theoretical profiles computed using linear combination of atomic orbitals (LCAO). The energy bands, density of states and Fermi surface structures of TiSi are reported using the LCAO and the full potential linearized augmented plane wave methods. Theoretical anisotropies in directional Compton profiles are interpreted in terms of energy bands. To confirm the conducting behavior, we also report the real space analysis of experimental Compton profile of TiSi.
Electronic structure and electron momentum density in TiSi
Ghaleb, A. M.; Mohammad, F. M.; Sahariya, Jagrati; Sharma, Mukesh; Ahuja, B. L.
2013-03-01
We report the electron momentum density in titanium monosilicide using 241Am Compton spectrometer. Experimental Compton profile has been compared with the theoretical profiles computed using linear combination of atomic orbitals (LCAO). The energy bands, density of states and Fermi surface structures of TiSi are reported using the LCAO and the full potential linearized augmented plane wave methods. Theoretical anisotropies in directional Compton profiles are interpreted in terms of energy bands. To confirm the conducting behavior, we also report the real space analysis of experimental Compton profile of TiSi.
Quasiparticle band structure of thirteen semiconductors and insulators
By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al0.5Ga0.5As and In0.53Ga0.47As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, E(Γ1c) of AlP, E(L1c) of AlAs, and E(L1c) of AlSb are discussed and attributed to various experimental uncertainties. Several other quasiparticle-excitation-related properties are also examined in this work. The many-body corrections to the eigenvalues of the valence-band-maximum states obtained from the local-density approximation are calculated for the zinc-blende-structure semiconductors, which are widely used in semiconductor-interface studies. In the present approach, the static screening of the Coulomb interaction between two electrons in a crystal is determined using a model that depends only on the local charge densities at these two points. Since a direct quantitative modeling of the electron self-energy operator has proven difficult, the successful application of the present model-dielectric-function scheme in self-energy calculations makes possible detailed studies of the quasiparticle properties of rather complex systems, which would be otherwise computationally too demanding
Density changes between sheared zones and their surrounding amorphous matrix as a result of plastic deformation in a cold-rolled metallic glass (melt-spun Al88Y7Fe5) were determined using high-angle annular dark-field (HAADF) detector intensities supplemented by electron-energy loss spectroscopy (EELS), energy-dispersive X-ray (EDX) and nano-beam diffraction analyses. Sheared zones or shear bands were observed as regions of bright or dark contrast arising from a higher or lower density relative to the matrix. Moreover, abrupt contrast changes from bright to dark and vice versa were found within individual shear bands. We associate the decrease in density mainly with an enhanced free volume in the shear bands and the increase in density with concomitant changes of the mass. This interpretation is further supported by changes in the zero loss and Plasmon signal originating from such sites. The limits of this new approach are discussed. - Highlights: • We describe a novel approach for measuring densities in shear bands of metallic glasses. • The linear relation of the dark-field intensity I/I0 and the mass thickness ρt was used. • Individual shear bands showed abrupt contrast changes from bright to dark and vice versa. • Density changes ranging from about −10% to +6% were found for such shear bands. • Mixtures of amorphous/medium range ordered domains were found within the shear bands
Band-Structure of Thallium by the LMTO Method
Holtham, P. M.; Jan, J. P.; Skriver, Hans Lomholt
1977-01-01
The relativistic band structure of thallium has been calculated using the linear muffin-tin orbital (LMTO) method. The positions and extents of the bands were found to follow the Wigner-Seitz rule approximately, and the origin of the dispersion of the bands was established from the canonical s and...
Kink Band Instability and Propagation in Layered Structures
Wadee, M.A.; Hunt, G.W.; Peletier, M.A.
2003-01-01
A recent two-dimensional prototype model for the initiation of kink banding in compressed layered structures is extended to embrace the two propagation mechanisms of band broadening and band progression. As well as interlayer friction, overburden pressure and layer bending energy, the characteristic
Dual-band electromagnetic band gap structure for noise isolation in mixed signal SiP
Rotaru, M. D.; Sykulski, J. K.
2010-01-01
A compact dual-band electromagnetic band-gap (EBG) structure is proposed. It is shown through numerical simulation using 3D electromagnetic finite element modelling that by adding a slit to the classical mushroom shape an extra resonance is introduced and thus dual-band EBG structures can be built by cascading these new elements. It is also demonstrated that this novel approach can be used to isolate noise in a system such as a dual band transceiver integrated into a mixed signal system in a ...
α-cluster structure and density waves in oblate nuclei
Pentagon and triangle shapes in 28Si and 12C are discussed in relation to nuclear density waves. In the antisymmetrized molecular dynamics calculations, the Kπ=5- band in 28Si and the Kπ=3- band in 12C are described by the pentagon and triangle shapes, respectively. These negative-parity bands can be interpreted as the parity partners of the Kπ=0+ ground bands and they are constructed from the parity-asymmetric-intrinsic states. The pentagon and the triangle shapes originate in 7α- and 3α-cluster structures, respectively. In a mean-field picture, they are described also by the static one-dimensional density waves at the edge of the oblate states. In analyses with ideal α-cluster models using Brink-Bloch cluster wave functions and that with a simplified model, we show that the static edge density waves for the pentagon and triangle shapes can be understood by spontaneous breaking of axial symmetry, i.e., the instability of the oblate states with respect to the edge density waves. The density wave is enhanced in the Z=N nuclei due to the proton-neutron coherent density waves, while it is suppressed in Z≠N nuclei.
Self energy corrections to the ''ab initio'' band structure: Chromium
We describe the effect of many particle corrections to improve the electronic energy spectrum calculated in the framework of the Density Functional Formalism (DFF). We show that it is possible to consider an n particle diagram like a correction to the DFF results for electronic structure, if we take into account the electron-electron interaction with non-zero transmitted momentum q or energy ε. The model is proposed for calculating the leading term of the self-energy expansion as a power series in interactions, i.e. the second order term under the conditions q=O and ε≠O. This model is illustrated by calculating the electronic band structure and optical properties of anti ferromagnetic chromium. The self-energy correction leads to a better agreement between the theoretical calculations and experimental measurements of electronic properties. (author). 40 refs, 5 figs, 3 tabs
Band structure and optical properties of LiKB4O7 single crystal
Smok, P; Seinert, H; Kityk, [No Value; Berdowski, J
2003-01-01
The band structure (BS), electronic charge density distribution and linear optical properties of the LiKB4O7 (LKB4) single crystal are calculated using a self-consistent norm-conserving pseudo-potential method within the framework of the local density approximation theory. Dispersion of the imaginar
Elucidating the stop bands of structurally colored systems through recursion
Amir, Ariel
2012-01-01
Interference phenomena are the source of some of the spectacular colors of animals and plants in nature. In some of these systems, the physical structure consists of an ordered array of layers with alternating high and low refractive indices. This periodicity leads to an optical band structure that is analogous to the electronic band structure encountered in semiconductor physics; namely, specific bands of wavelengths (the stop bands) are perfectly reflected. Here, we present a minimal model for optical band structure in a periodic multilayer and solve it using recursion relations. We present experimental data for various beetles, whose optical structure resembles the proposed model. The stop bands emerge in the limit of an infinite number of layers by finding the fixed point of the recursive relations. In order for these to converge, an infinitesimal amount of absorption needs to be present, reminiscent of the regularization procedures commonly used in physics calculations. Thus, using only the phenomenon of...
Density structures inside the plasmasphere: Cluster observations
Darrouzet, F.; Decreau, P.M.E.; De Keyser, J.; Masson, A.; Gallagher, D.L.; Santolik, O.; Sandel, B.R.; Trotignon, J.G.; Rauch, J.L.; Le Guirriec, E.; Canu, P.; Sedgemore-Schulthess, F.; Andre, M.; Lemaire, J.F.
2004-01-01
The electron density profiles derived from the EFW and WHISPER instruments on board the four Cluster spacecraft reveal density structures inside the plasmasphere and at its outer boundary, the plasmapause. We have conducted a statistical study to characterize these density structures. We focus on...
Band structures of TiO2 doped with N, C and B
无
2006-01-01
This study on the band structures and charge densities of nitrogen (N)-, carbon (C)- and boron (B)-doped titanium dioxide (TiO2) by first-principles simulation with the CASTEP code (Segall et al., 2002) showed that the three 2p bands of impurity atom are located above the valence-band maximum and below the Ti 3d bands, and that along with the decreasing of impurity atomic number, the fluctuations become more intensive. We cannot observe obvious band-gap narrowing in our result.Therefore, the cause of absorption in visible light might be the isolated impurity atom 2p states in band-gap rather than the band-gap narrowing.
Band Structure Characteristics of Nacreous Composite Materials with Various Defects
Yin, J.; Zhang, S.; Zhang, H. W.; Chen, B. S.
2016-06-01
Nacreous composite materials have excellent mechanical properties, such as high strength, high toughness, and wide phononic band gap. In order to research band structure characteristics of nacreous composite materials with various defects, supercell models with the Brick-and-Mortar microstructure are considered. An efficient multi-level substructure algorithm is employed to discuss the band structure. Furthermore, two common systems with point and line defects and varied material parameters are discussed. In addition, band structures concerning straight and deflected crack defects are calculated by changing the shear modulus of the mortar. Finally, the sensitivity of band structures to the random material distribution is presented by considering different volume ratios of the brick. The results reveal that the first band gap of a nacreous composite material is insensitive to defects under certain conditions. It will be of great value to the design and synthesis of new nacreous composite materials for better dynamic properties.
Band structure of 158Gd in DPPQ and IBM
The band structure of 158Gd has been studied extensively in the decay of 158Eu and in reaction work. The Kumar-Baranger semimicroscopic DPPQ model yields the parameters of the collective Hamiltonian and predicts the band structure. The Interacting Boson Model (IBM-1) was also used for comparison
The complex band structure for armchair graphene nanoribbons
Zhang Liu-Jun; Xia Tong-Sheng
2010-01-01
Using a tight binding transfer matrix method, we calculate the complex band structure of armchair graphene nanoribbons. The real part of the complex band structure calculated by the transfer matrix method fits well with the bulk band structure calculated by a Hermitian matrix. The complex band structure gives extra information on carrier's decay behaviour. The imaginary loop connects the conduction and valence band, and can profoundly affect the characteristics of nanoscale electronic device made with graphene nanoribbons. In this work, the complex band structure calculation includes not only the first nearest neighbour interaction, but also the effects of edge bond relaxation and the third nearest neighbour interaction. The band gap is classified into three classes. Due to the edge bond relaxation and the third nearest neighbour interaction term, it opens a band gap for N= 3M-1. The band gap is almost unchanged for N = 3M + 1, but decreased for N = 3M. The maximum imaginary wave vector length provides additional information about the electrical characteristics of graphene nmaoribbons, and is also classified into three classes.
Narimani, M.; Nourbakhsh, Z.
2016-05-01
In this paper, the structural, electronic and optical properties of LuPdBi and ScPdBi compounds are investigated using the density functional theory by WIEN2K package within the generalized gradient approximation, local density approximation, Engel-Vosco generalized gradient approximations and modified Becke-Johnson potential approaches. The topological phases and band orders of these compounds are studied. The effect of pressure on band inversion strength, electron density of states and the linear coefficient of the electronic specific heat of these compounds is investigated. Furthermore, the effect of pressure on real and imaginary parts of dielectric function, absorption and reflectivity coefficients of these compounds is studied.
Pressure effects on band structures in dense lithium
We studied the change of the band structures in some structures of Li predicted at high pressures, using GGA and GW calculations. The width of the 1s band coming from the 1s electron of Li shows broadening by the pressurization, which is the normal behavior of bands at high pressure. The width of the band just below the Fermi level decreases by the pressurization, which is an opposite behavior to the normal bands. The character of this narrowing band is mostly p-like with a little s-like portion. The band gaps in some structures are really observed even by the GGA calculations. The gaps by the GW calculations increase to about 1.5 times the GGA values. Generally the one-shot GW calculation (diagonal only calculations) gives more reliable values than the GGA, but it may fail to predict band gaps for the case where band dispersion shows complex crossing near the Fermi level. There remains some structures for which GW calculations with off-diagonal elements taken into account are needed to identify the phase to be metallic or semiconducting.
Vargas, W. E.; Hernández-Jiménez, M.; Libby, E.; Azofeifa, D. E.; Solis, Á.; Barboza-Aguilar, C.
2015-09-01
Under normal illumination with non-polarized light, reflection spectra of the cuticle of golden-like and red Chrysina aurigans scarabs show a structured broad band of left-handed circularly polarized light. The polarization of the reflected light is attributed to a Bouligand-type left-handed chiral structure found through the scarab's cuticle. By considering these twisted structures as one-dimensional photonic crystals, a novel approach is developed from the dispersion relation of circularly polarized electromagnetic waves traveling through chiral media, to show how the broad band characterizing these spectra arises from an intrinsic narrow photonic band gap whose spectral position moves through visible and near-infrared wavelengths.
Density structures inside the plasmasphere: Cluster observations
Darrouzet, F.; Decreau, P.M.E.; De Keyser, J.;
2004-01-01
The electron density profiles derived from the EFW and WHISPER instruments on board the four Cluster spacecraft reveal density structures inside the plasmasphere and at its outer boundary, the plasmapause. We have conducted a statistical study to characterize these density structures. We focus on...... the plasmasphere crossing on I I April 2002, during which Cluster observed several density irregularities inside the plasmasphere, as well as a plasmaspheric plume. We derive the density gradient vectors from simultaneous density measurements by the four spacecraft. We also determine the normal...... velocity of the boundaries of the plume and of the irregularities from the time delays between those boundaries in the four individual density profiles, assuming they are planar. These new observations yield novel insights about the occurrence of density irregularities, their geometry and their dynamics...
Density structures inside the plasmasphere: Cluster observations
F. Darrouzet
2004-07-01
Full Text Available The electron density profiles derived from the EFW and WHISPER instruments on board the four Cluster spacecraft reveal density structures inside the plasmasphere and at its outer boundary, the plasmapause. We have conducted a statistical study to characterize these density structures. We focus on the plasmasphere crossing on 11 April 2002, during which Cluster observed several density irregularities inside the plasmasphere, as well as a plasmaspheric plume. We derive the density gradient vectors from simultaneous density measurements by the four spacecraft. We also determine the normal velocity of the boundaries of the plume and of the irregularities from the time delays between those boundaries in the four individual density profiles, assuming they are planar. These new observations yield novel insights about the occurrence of density irregularities, their geometry and their dynamics. These in-situ measurements are compared with global images of the plasmasphere from the EUV imager on board the IMAGE satellite.
Alpha-cluster structure and density wave in oblate nuclei
Kanada-En'yo, Yoshiko
2011-01-01
Pentagon and triangle shapes in Si-28 and C-12 are discussed in relation with nuclear density wave. In the antisymmetrized molecular dynamics calculations, the $K^\\pi=5^-$ band in Si-28 and the $K^\\pi=3^-$ band in C-12 are described by the pentagon and triangle shapes, respectively. These negative-parity bands can be interpreted as the parity partners of the $K^\\pi=0^+$ ground bands and they are constructed from the parity-asymmetric-intrinsic states. The pentagon and the triangle shapes originate in 7alpha and 3alpha cluster structures, respectively. In a mean-field picture, they are described also by the static one-dimensional density wave at the edge of the oblate states. In analysis with ideal alpha cluster models using Brink-Bloch cluster wave functions and that with a simplified model, we show that the static edge density wave for the pentagon and triangle shapes can be understood by spontaneous breaking of axial symmetry, i.e., the instability of the oblate states with respect to the edge density wave....
Atomic structure of amorphous shear bands in boron carbide.
Reddy, K Madhav; Liu, P; Hirata, A; Fujita, T; Chen, M W
2013-01-01
Amorphous shear bands are the main deformation and failure mode of super-hard boron carbide subjected to shock loading and high pressures at room temperature. Nevertheless, the formation mechanisms of the amorphous shear bands remain a long-standing scientific curiosity mainly because of the lack of experimental structure information of the disordered shear bands, comprising light elements of carbon and boron only. Here we report the atomic structure of the amorphous shear bands in boron carbide characterized by state-of-the-art aberration-corrected transmission electron microscopy. Distorted icosahedra, displaced from the crystalline matrix, were observed in nano-sized amorphous bands that produce dislocation-like local shear strains. These experimental results provide direct experimental evidence that the formation of amorphous shear bands in boron carbide results from the disassembly of the icosahedra, driven by shear stresses. PMID:24052052
Momentum-dependent band spin splitting in semiconducting MnO2: a density functional calculation.
Noda, Yusuke; Ohno, Kaoru; Nakamura, Shinichiro
2016-05-11
Recently, manganese-oxide compounds have attracted considerable attention, in particular, as candidate materials for photochemical water-splitting reactions. Here, we investigate electronic states of pristine manganese dioxides (MnO2) in different crystal phases using spin-polarized density functional theory (DFT) with Hubbard U correction. Geometrical structures and band dispersions of α-, β-, δ-, and λ-MnO2 crystals with collinear magnetic [ferromagnetic (FM) and antiferromagnetic (AFM)] orders are discussed in detail. We reveal that penalty energies that arise by violating the Goodenough-Kanamori rule are important and the origin of the magnetic interactions of the MnO2 crystals is governed by the superexchange interactions of Mn-O-Mn groups. In addition, it is found that momentum-dependent band spin splitting occurs in the AFM α-, β-, and δ-MnO2 crystals while no spin splitting occurs in the AFM λ-MnO2 crystal. Our results show that spin-split band dispersions stem from the different orientations of Mn-centred oxygen octahedra. Such interesting electronic states of the MnO2 crystals are unraveled by our discussion on the relationship between the effective (spin-dependent) single-electron potentials and the space-group symmetry operations that map up-spin Mn atoms onto down-spin Mn atoms. This work provides a basis to understand the relationship between the spin-dependent electronic states and the crystallography of manganese oxides. Another relationship to the recent experimental observations of the photochemical oxygen evolution of MnO2 crystals is also discussed. PMID:27119122
Shell model description of band structure in 48Cr
The band structure for normal and abnormal parity bands in 48Cr are described using the m-scheme shell model. In addition to full fp-shell, two particles in the 1d3/2 orbital are allowed in order to describe intruder states. The interaction includes fp-, sd- and mixed matrix elements
Fractional Band Filling in an Atomic Chain Structure
Crain, J. N.; Kirakosian, A.; Altmann, K. N.; Bromberger, C.; Erwin, S. C.; McChesney, J. L.; Lin, J.-L.; Himpsel, F. J.
2003-05-01
A new chain structure of Au is found on stepped Si(111) which exhibits a 1/4-filled band and a pair of ≥1/2-filled bands with a combined filling of 4/3. Band dispersions and Fermi surfaces for Si(553)-Au are obtained by photoemission and compared to that of Si(557)-Au. The dimensionality of both systems is determined using a tight binding fit. The fractional band filling makes it possible to preserve metallicity in the presence of strong correlations.
Structure of nearly degenerate dipole bands in {sup 108}Ag
Sethi, J. [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Palit, R., E-mail: palit@tifr.res.in [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Saha, S.; Trivedi, T. [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhat, G.H.; Sheikh, J.A. [Department of Physics, University of Kashmir, Srinagar 190 006 (India); Datta, P. [Ananda Mohan College, Kolkata 700009 (India); Carroll, J.J. [US Army Research Laboratory, Adelphi, MD 20783 (United States); Chattopadhyay, S. [Saha Institute of Nuclear Physics, Kolkata 700064 (India); Donthi, R. [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Garg, U. [University of Notre Dame, Notre Dame, IN 46556 (United States); Jadhav, S.; Jain, H.C. [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Karamian, S. [Joint Institute for Nuclear Research, Dubna 141980 (Russian Federation); Kumar, S. [University of Delhi, Delhi 110007 (India); Litz, M.S. [US Army Research Laboratory, Adelphi, MD 20783 (United States); Mehta, D. [Panjab University, Chandigarh 160014 (India); Naidu, B.S. [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Naik, Z. [Sambalpur University, Sambalpur 143005 (India); Sihotra, S. [Panjab University, Chandigarh 160014 (India); and others
2013-08-09
The high spin negative parity states of {sup 108}Ag have been investigated with the {sup 11}B + {sup 100}Mo reaction at 39 MeV beam energy using the INGA facility at TIFR, Mumbai. From the γ–γ coincidence analysis, an excited negative parity band has been established and found to be nearly degenerate with the ground state band. The spin and parity of the levels are assigned using angular correlation and polarization measurements. This pair of degenerate bands in {sup 108}Ag is studied using the recently developed microscopic triaxial projected shell model approach. The observed energy levels and the ratio of the electromagnetic transition probabilities of these bands in this isotope are well reproduced by the present model. Further, it is shown that the partner band has a different quasiparticle structure as compared to the yrast band.
Structure of nearly degenerate dipole bands in 108Ag
The high spin negative parity states of 108Ag have been investigated with the 11B + 100Mo reaction at 39 MeV beam energy using the INGA facility at TIFR, Mumbai. From the γ–γ coincidence analysis, an excited negative parity band has been established and found to be nearly degenerate with the ground state band. The spin and parity of the levels are assigned using angular correlation and polarization measurements. This pair of degenerate bands in 108Ag is studied using the recently developed microscopic triaxial projected shell model approach. The observed energy levels and the ratio of the electromagnetic transition probabilities of these bands in this isotope are well reproduced by the present model. Further, it is shown that the partner band has a different quasiparticle structure as compared to the yrast band
Study of periodic band gap structure of the magnetized plasma photonic crystals
ZHANG Hai-feng; MA Li; LIU Shao-bin
2009-01-01
The characteristics of the periodic band gaps of the one dimension magnetized plasma photonic crystals are studied with the piecewise linear current density recursive convolution (PLCDRC) finite-differential time-domain (FDTD) method. In fre-quency-domain, the transmission coefficients of electromagnetic Gaussian pulses are computed, and the effects of the periodic structure constant, plasma layer thickness and parameters of plasma on the properties of periodic band gaps of magnetized photonic crystals are analyzed. The results show that the periodic band gaps depend strongly on the plasma parameters.
Density functional theory and electronic structure
The paper presents an overview of the density functional theory and provides a brief appraisal of the latest developments of the theory. Particular emphasis is placed on the understanding of the electronic structure of materials via the density functional theory. 37 refs, 1 tab
Relationships between magnetic foot points and G-band bright structures
Ishikawa, R; Kitakoshi, Y; Katsukawa, Y; Bonet, J A; Domínguez, S Vargas; van der Voort, L H M Rouppe; Sakamoto, Y; Ebisuzaki, T
2008-01-01
Magnetic elements are thought to be described by flux tube models, and are well reproduced by MHD simulations. However, these simulations are only partially constrained by observations. We observationally investigate the relationship between G-band bright points and magnetic structures to clarify conditions, which make magnetic structures bright in G-band. The G-band filtergrams together with magnetograms and dopplergrams were taken for a plage region covered by abnormal granules as well as ubiquitous G-band bright points, using the Swedish 1-m Solar Telescope (SST) under very good seeing conditions. High magnetic flux density regions are not necessarily associated with G-band bright points. We refer to the observed extended areas with high magnetic flux density as magnetic islands to separate them from magnetic elements. We discover that G-band bright points tend to be located near the boundary of such magnetic islands. The concentration of G-band bright points decreases with inward distance from the boundar...
Pair-Breaking Critical Current Density of Two-Band Superconductor MgB2
I.N. Askerzade
2005-01-01
Temperature dependence of the pair-breaking critical current density of MgB2, jd(T), is studied using a two-band Ginzburg-Landau theory. The results are shown to be in good agreement with experimental data for the superconducting magnesium diboride MgB2.
Electronic Band Structures of TiO2 with Heavy Nitrogen Doping
XUE Jinbo; LI Qi; LIANG Wei; SHANG Jianku
2008-01-01
The first-principles density-functional calculation was conducted to investigate the electronic band structures of titanium dioxide with heavy nitrogen doping (TiO2-xNx).The calculation results indicate that when x≤0.25,isolated N 2p states appear above the valence-band maximum of TiO2 without a band-gap narrowing between O 2p and Ti 3d states.When x≥0.50,an obvious band gap narrowing between O 2p and Ti 3d states was observed along with the existence of isolated N 2p states above the valence-band of TiO2,indicating that the mechanism proposed by Asahi et al operates under heavy nitrogen doping condition.
Band structure of surface barrier states and resonances
Full text: G. Binnig and H. Rohrer, Nobel Prize Winners for the invention of the Scanning Tunneling Microscope, write in the opening sentence of one of their papers, co-authored with others : 'One of the fundamental problems in surface physics is obtaining knowledge of the electron-metal-surface interaction potential.' Although it is known that the surface barrier has an 'image' asymptotic form and saturates or weakens closer to the crystal surface, the position of the image tail, momentum dependence of the barrier height and saturation closer to the surface have not been agreed upon by different workers and techniques to this day. Ab initio calculations using the density functional approximation produce locations for the position of the image tail which differ by ∼50% depending on whether the exiting or incoming electron is considered part of the crystal or a classical charge interacting with the electron gas. Very low energy electron diffraction (VLEED), k-resolved inverse photoemission spectroscopy (KRIPES) and 2-photon photoemission spectroscopy (2PPE) are sensitive to the barrier but analyses to date have not yielded consistent conclusions. In this work we have used our plane-wave scattering method to calculate the barrier energy band structure for Cu (001) over the whole SBZ to compare with experimental results from KRIPES and 2PPE data as well as the calculation of Smith et al. This calculation used a parameterized nearly-free-electron function to represent the substrate scattering and could only produce states not resonances which occur outside of bulk band gaps and above the barrier height. As well, no inelastic scattering could be included. We show that inelastic scattering, surface restructuring and an extended data-base must be included for definitive conclusions about details of the barrier. Also, our calculation shows above-barrier resonances are strong and should be measured by experimentalists to extract the momentum dependent saturation and
Density functional calculation of equilibrium geometry and electronic structure of pyrite
邱冠周; 肖奇; 胡岳华; 徐竞
2001-01-01
The equilibrium geometry and electronic structure of pyrite has been studied using self-consistent density-functional theory within the local density approximation (LDA). The optimum bulk geometry is in good agreement with crystallographic data. The calculated band structure and density of states in the region around the Fermi energy show that valence-band maximum (VBM) is at X (100), and the conduction-band minimum (CBM) is at G (000). The indirect and direct band gaps are 0.6eV and 0.74eV, respectively. The calculated contour map of difference of charge density shows excess charge in nonbonding d electron states on the Fe sites. The density increases between sulfur nuclei and between iron and sulfur nuclei qualitatively reveal that S-S bond and Fe-S bond are covalent binding.
Analytical formulas for carrier density and Fermi energy in semiconductors with a tight-binding band
Analytical formulas for evaluating the relation of carrier density and Fermi energy for semiconductors with a tight-binding band have been proposed. The series expansions for a carrier density with fast convergency have been obtained by means of a Bessel function. A simple and analytical formula for Fermi energy has been derived with the help of the Gauss integration method. The results of the proposed formulas are in good agreement with accurate numerical solutions. The formulas have been successfully used in the calculation of carrier density and Fermi energy in a miniband superlattice system. Their accuracy is in the order of 10−5. (paper)
Photonic band gap of superconductor-medium structure: Two-dimensional triangular lattice
Liu, Wan-guo; Pan, Feng-ming, E-mail: fmpan@nuaa.edu.cn; Cai, Li-wei
2014-05-15
Highlights: • Plane wave expansion is generalized to superconductor-medium periodic structure. • A wider band gap appears than that in conventional photonic crystals. • Part of original energy levels are rearranged upon consideration of the superconductivity. • Band gap width decreases monotonically with penetration length, but not with the filling factor. • Band gaps can be partially shut down or opened by adjusting filling factor. - Abstract: Based on London theory a general form of wave equation is formulated for both dielectric medium and superconductor. Using the wave equation and applying plane wave expansion, we have numerically calculated the band structures and density of states of a photonic crystal, whose intersection is constructed by a two-dimensional triangular lattice of superconductor padding in dielectric medium. Results indicate a wider band gap in the superconductor-medium photonic crystal than that in conventional photonic crystals. And part of original energy levels are found to be rearranged upon consideration of the superconductivity. The dependence of band gap on penetration length and filling factor is also discussed. Band gap width decreases monotonically with the penetration length, but not with the filling factor. Band gaps can be partially shut down or opened by adjusting filling factor.
Effect of density of state on isotope effect exponent of two-band superconductors
The exact formula of T c's equation and the isotope effect exponent of two-band s-wave superconductors in weak-coupling limit are derived by considering the influence of two kinds of density of state: constant and van Hove singularity. The paring interaction in each band consisted of two parts: the electron-phonon interaction and non-electron-phonon interaction are included in our model. We find that the interband interaction of electron-phonon show more effect on isotope exponent than the intraband interaction and the isotope effect exponent with constant density of state can fit to experimental data, MgB2 and high-T c superconductor, better than van Hove singularity density of state
Design for maximum band-gaps in beam structures
Olhoff, Niels; Niu, Bin; Cheng, Gengdong
2012-01-01
This paper aims to extend earlier optimum design results for transversely vibrating Bernoulli-Euler beams by determining new optimum band-gap beam structures for (i) different combinations of classical boundary conditions, (ii) much larger values of the orders n and n-1 of adjacent upper and lower...... eigenfrequencies of maximized band-gaps, and (iii) different values of a minimum cross-sectional area constraint. The periodicity of the optimum beams and the attenuation of their band-gaps are also discussed....
Markos, Peter
2016-01-01
Frequency and transmission spectrum of two-dimensional array of metallic rods is investigated numerically. Based on the recent analysis of the band structure of two-dimensional photonic crystal with dielectric rods [P. Marko\\v{s}, Phys. Rev. A 92 043814 (2015)] we identify two types of bands in the frequency spectrum: Bragg (P) bands resulting from a periodicity and Fano (F) bands which arise from Fano resonances associated with each of the cylinders within the periodic structure. It is shown that the existence of Fano band in a certain frequency range is manifested by a Fano resonance in the transmittance. In particular, we re-examine the symmetry properties of the H- polarized band structure in the frequency range where the spectrum consists of the localized modes associated with the single scatterer resonances and we explore process of formation of Fano bands by identifying individual terms in the expansion of the LCAO states. We demonstrate how the interplay between the two scattering mechanisms affects p...
Band formation in coupled-resonator slow-wave structures.
Möller, Björn M; Woggon, Ulrike; Artemyev, Mikhail V
2007-12-10
Sequences of coupled-resonator optical waveguides (CROWs) have been examined as slow-wave structures. The formation of photonic bands in finite systems is studied in the frame of a coupled oscillator model. Several types of resonator size tuning in the system are evaluated in a systematical manner. We show that aperiodicities in sequences of coupled microspheres provide an additional degree of freedom for the design of photonic bands. PMID:19551030
Band structures and localization properties of aperiodic layered phononic crystals
Yan Zhizhong, E-mail: zzyan@bit.edu.cn [Department of Applied Mathematics, Beijing Institute of Technology, Beijing 100081 (China); Zhang Chuanzeng [Department of Civil Engineering, University of Siegen, D-57078 Siegen (Germany)
2012-03-15
The band structures and localization properties of in-plane elastic waves with coupling of longitudinal and transverse modes oblique propagating in aperiodic phononic crystals based on Thue-Morse and Rudin-Shapiro sequences are studied. Using transfer matrix method, the concept of the localization factor is introduced and the correctness is testified through the Rytov dispersion relation. For comparison, the perfect periodic structure and the quasi-periodic Fibonacci system are also considered. In addition, the influences of the random disorder, local resonance, translational and/or mirror symmetries on the band structures of the aperiodic phononic crystals are analyzed in this paper.
Crystal structure, energy band and optical properties of dysprosium monophosphate DyPO{sub 4}
Khadraoui, Z.; Bouzidi, C., E-mail: bouzidtc@yahoo.fr; Horchani-Naifer, K.; Ferid, M.
2014-12-25
Graphical abstract: The monophosphate DyPO{sub 4} has been synthesized by high temperature solid-state reaction method and was structurally characterized by single crystal X-ray diffraction. DyPO{sub 4} crystallizes in the tetragonal system (I4{sub 1}/Iamd). The energy-band structure, density of states and the chemical bonds have been investigated by density functional methods (DFT). - Highlights: • The DyPO{sub 4} has been synthesized by high temperature solid-state reaction method. • DFT was used to determine the electronic structure and optical properties of DyPO{sub 4}. • The monophosphate DyPO{sub 4} is an insulator with direct band gap (6.38 eV). - Abstract: A rare earth monophosphate crystal of DyPO{sub 4} has been synthesized by high temperature solid-state reaction method and was structurally characterized by single crystal X-ray diffraction. Atomic arrangement of DyPO{sub 4} structure is based on corner and edge sharing PO{sub 4} tetrahedra and DyO{sub 8} polyhedra. The FTIR, Raman, Scanning electron microscopy, diffuse reflectance and emission spectra of the compound have been investigated. Density functional calculation using a Generalized Gradient Approximation was used to determine the electronic structure and optical properties. The calculated total and partial densities of states indicate that the top of valance band is mainly built upon O-2p states with P-3p states via σ (P–O) interactions, and the low conduction bands mostly originates from Dy-5d. The results show that the monophosphate DyPO{sub 4} is an insulator with a calculated band gap (5.8 eV) closer to the experimental value (6.38 eV)
Hybrid functional band gap calculation of SnO6 containing perovskites and their derived structures
We have studied the properties of SnO6 octahedra-containing perovskites and their derived structures using ab initio calculations with different density functionals. In order to predict the correct band gap of the materials, we have used B3LYP hybrid density functional, and the results of B3LYP were compared with those obtained using the local density approximation and generalized gradient approximation data. The calculations have been conducted for the orthorhombic ground state of the SnO6 containing perovskites. We also have expended the hybrid density functional calculation to the ASnO3/A'SnO3 system with different cation orderings. We propose an empirical relationship between the tolerance factor and the band gap of SnO6 containing oxide materials based on first principles calculation. - Graphical abstract: (a) Structure of ASnO3 for orthorhombic ground state. The green ball is A (Ba, Sr, Ca) cation and the small (red) ball on edge is oxygen. SnO6 octahedrons are plotted as polyhedron. (b) Band gap of ASnO3 as a function of the tolerance factor for different density functionals. The experimental values of the band gap are marked as green pentagons. (c) ASnO3/A'SnO3 superlattices with two types cation arrangement: [001] layered structure and [111] rocksalt structure, respectively. (d) B3LYP hybrid functional band gaps of ASnO3, [001] ordered superlattices, and [111] ordered superlattices of ASnO3/A'SnO3 as a function of the effective tolerance factor. Note the empirical linear relationship between the band gap and effective tolerance factor. - Highlights: • We report the hybrid functional band gap calculation of ASnO3 and ASnO3/A'SnO3. • The band gap of ASnO3 using B3LYP functional reproduces the experimental value. • We propose the linear relationship between the tolerance factor and the band gap
Tuning the electronic band structure of PCBM by electron irradiation
Yoo Seung
2011-01-01
Full Text Available Abstract Tuning the electronic band structures such as band-edge position and bandgap of organic semiconductors is crucial to maximize the performance of organic photovoltaic devices. We present a simple yet effective electron irradiation approach to tune the band structure of [6, 6]-phenyl-C61-butyric acid methyl ester (PCBM that is the most widely used organic acceptor material. We have found that the lowest unoccupied molecular orbital (LUMO level of PCBM up-shifts toward the vacuum energy level, while the highest occupied molecular orbital (HOMO level down-shifts when PCBM is electron-irradiated. The shift of the HOMO and the LUMO levels increases as the irradiated electron fluence increases. Accordingly, the band-edge position and the bandgap of PCBM can be controlled by adjusting the electron fluence. Characterization of electron-irradiated PCBM reveals that the variation of the band structure is attributed to the molecular structural change of PCBM by electron irradiation.
Schwöbel, André; Precht, Ruben; Motzko, Markus; Carrillo Solano, Mercedes A.; Calvet, Wolfram; Hausbrand, René; Jaegermann, Wolfram
2014-12-01
Lithium phosphorus oxynitride (LiPON) is a solid state electrolyte commonly used in thin film batteries (TFBs). Advanced TFBs face the issue of detrimental electrode-electrolyte interlayer formation, related to the electronic structure of the interface. In this contribution, we study the valence band structure of LiPON using resonant photoemission and synchrotron photoemission with variable excitation energies. The identification of different valence band features is done according to the known valence band features of meta- and orthophosphates. Additionally we compare our results with partial density of states simulations from literature. We find that the valence band structure is similar to the known metaphosphates with an additional contribution of nitrogen states at the top of the valence band. From the results we conclude that synchrotron X-ray photoemission (XPS) is a useful tool to study the valence band structure of nitridated alkali phosphate glasses.
Simulation of the Band Structure of Graphene and Carbon Nanotube
Simulation technique has been performed to simulate the band structure of both graphene and carbon nanotube. Accordingly, the dispersion relations for graphene and carbon nanotube are deduced analytically, using the tight binding model and LCAO scheme. The results from the simulation of the dispersion relation of both graphene and carbon nanotube were found to be consistent with those in the literature which indicates the correctness of the process of simulation technique. The present research is very important for tailoring graphene and carbon nanotube with specific band structure, in order to satisfy the required electronic properties of them.
Simulation of the Band Structure of Graphene and Carbon Nanotube
Mina, Aziz N.; Awadallah, Attia A.; Phillips, Adel H.; Ahmed, Riham R.
2012-02-01
Simulation technique has been performed to simulate the band structure of both graphene and carbon nanotube. Accordingly, the dispersion relations for graphene and carbon nanotube are deduced analytically, using the tight binding model & LCAO scheme. The results from the simulation of the dispersion relation of both graphene and carbon nanotube were found to be consistent with those in the literature which indicates the correctness of the process of simulation technique. The present research is very important for tailoring graphene and carbon nanotube with specific band structure, in order to satisfy the required electronic properties of them.
High-Pressure Crystal Structure, Lattice Vibrations, and Band Structure of BiSbO4.
Errandonea, Daniel; Muñoz, Alfonso; Rodríguez-Hernández, Placida; Gomis, Oscar; Achary, S Nagabhusan; Popescu, Catalin; Patwe, Sadeque J; Tyagi, Avesh K
2016-05-16
The high-pressure crystal structure, lattice-vibrations, and electronic band structure of BiSbO4 were studied by ab initio simulations. We also performed Raman spectroscopy, infrared spectroscopy, and diffuse-reflectance measurements, as well as synchrotron powder X-ray diffraction. High-pressure X-ray diffraction measurements show that the crystal structure of BiSbO4 remains stable up to at least 70 GPa, unlike other known MTO4-type ternary oxides. These experiments also give information on the pressure dependence of the unit-cell parameters. Calculations properly describe the crystal structure of BiSbO4 and the changes induced by pressure on it. They also predict a possible high-pressure phase. A room-temperature pressure-volume equation of state is determined, and the effect of pressure on the coordination polyhedron of Bi and Sb is discussed. Raman- and infrared-active phonons were measured and calculated. In particular, calculations provide assignments for all the vibrational modes as well as their pressure dependence. In addition, the band structure and electronic density of states under pressure were also calculated. The calculations combined with the optical measurements allow us to conclude that BiSbO4 is an indirect-gap semiconductor, with an electronic band gap of 2.9(1) eV. Finally, the isothermal compressibility tensor for BiSbO4 is given at 1.8 GPa. The experimental (theoretical) data revealed that the direction of maximum compressibility is in the (0 1 0) plane at ∼33° (38°) to the c-axis and 47° (42°) to the a-axis. The reliability of the reported results is supported by the consistency between experiments and calculations. PMID:27128858
Strain effects on band structure of wurtzite ZnO: a GGA + U study
Band structures in wurtzite bulk ZnO/Zn1−xMgxO are calculated using first-principles based on the framework of generalized gradient approximation to density functional theory with the introduction of the on-site Coulomb interaction. Strain effects on band gap, splitting energies of valence bands, electron and hole effective masses in strained bulk ZnO are discussed. According to the results, the band gap increases gradually with increasing stress in strained ZnO as an Mg content of Zn1−xMgxO substrate less than 0.3, which is consistent with the experimental results. It is further demonstrated that electron mass of conduction band (CB) under stress increases slightly. There are almost no changes in effective masses of light hole band (LHB) and heavy hole band (HHB) along [00k] and [k00] directions under stress, and stress leads to an obvious decrease in effective masses of crystal splitting band (CSB) along the same directions. (semiconductor materials)
Tunable band structures of polycrystalline graphene by external and mismatch strains
Jiang-Tao Wu; Xing-Hua Shi; Yu-Jie Wei
2012-01-01
Lacking a band gap largely limits the application of graphene in electronic devices.Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene.Here,we investigate the band structure of polycrystalline graphene tuned by externally imposed strains and intrinsic mismatch strains at the GB by density functional theory (DFT) calculations.We found that graphene with symmetrical GBs typically has zero band gap even with large uniaxial and biaxial strain.However,some particular asymmetrical GBs can open a band gap in graphene and their band structures can be substantially tuned by external strains.A maximum band gap about 0.19 eV was observed in matched-armchair GB (5,5) | (3,7) with a misorientation of θ =13° when the applied uniaxial strain increases to 9％.Although mismatch strain is inevitable in asymmetrical GBs,it has a small influence on the band gap of polycrystalline graphene.
Band-gap corrected density functional theory calculations for InAs/GaSb type II superlattices
We performed pseudopotential based density functional theory (DFT) calculations for GaSb/InAs type II superlattices (T2SLs), with bandgap errors from the local density approximation mitigated by applying an empirical method to correct the bulk bandgaps. Specifically, this work (1) compared the calculated bandgaps with experimental data and non-self-consistent atomistic methods; (2) calculated the T2SL band structures with varying structural parameters; (3) investigated the interfacial effects associated with the no-common-atom heterostructure; and (4) studied the strain effect due to lattice mismatch between the two components. This work demonstrates the feasibility of applying the DFT method to more exotic heterostructures and defect problems related to this material system
The full quasiparticle band structure of CdWO4 is calculated within the single-shot GW (G0W0) approximation using maximally localized Wannier functions, which allows one to assess the validity of the commonly used scissor operator. Calculations are performed using the Godby–Needs plasmon pole model and the accurate contour deformation technique. It is shown that while the two methods yield identical band gap energies, the low-lying states are given inaccurately by the plasmon pole model. We report a band gap energy of 4.94 eV, including spin–orbit interaction at the DFT–LDA (density functional theory–local density approximation) level. Quasiparticle renormalization in CdWO4 is shown to be correlated with localization distance. Electron and hole effective masses are calculated at the DFT and G0W0 levels. (paper)
Acoustic band gaps in 2D liquid phononic crystals of rectangular structure
We present band structure results for a new two dimensional (2D) rectangular array geometry of water (mercury) cylinders of square cross section in a mercury (water) host. The results show that the water/mercury system, consisting of low-density cylinders in a high-density host, is the most favourable configuration for obtaining large acoustic gaps. Otherwise, only very small stop gaps can be found for the mercury/water systems. For a given cylinder width value, the lowest band gap may not always have the maximum width, but at some value in both systems the lowest band gap will always have the largest width. The differences in the case of circular cylinders are also discussed. (author)
Optimum design of band-gap beam structures
Olhoff, Niels; Niu, Bin; Cheng, Gengdong
2012-01-01
of a single, linearly elastic material without damping. Numerical results are presented for different combinations of classical boundary conditions, prescribed orders of the upper and lower natural frequencies of maximized natural frequency gaps, and a given minimum constraint value for the beam......The design of band-gap structures receives increasing attention for many applications in mitigation of undesirable vibration and noise emission levels. A band-gap structure usually consists of a periodic distribution of elastic materials or segments, where the propagation of waves is impeded or...... significantly suppressed for a range of external excitation frequencies. Maximization of the band-gap is therefore an obvious objective for optimum design. This problem is sometimes formulated by optimizing a parameterized design model which assumes multiple periodicity in the design. However, it is shown in...
Reconfigurable wave band structure of an artificial square ice
Iacocca, Ezio; Gliga, Sebastian; Stamps, Robert L.; Heinonen, Olle
2016-04-01
Artificial square ices are structures composed of magnetic nanoelements arranged on the sites of a two-dimensional square lattice, such that there are four interacting magnetic elements at each vertex, leading to geometrical frustration. Using a semianalytical approach, we show that square ices exhibit a rich spin-wave band structure that is tunable both by external magnetic fields and the magnetization configuration of individual elements. Internal degrees of freedom can give rise to equilibrium states with bent magnetization at the element edges leading to characteristic excitations; in the presence of magnetostatic interactions these form separate bands analogous to impurity bands in semiconductors. Full-scale micromagnetic simulations corroborate our semianalytical approach. Our results show that artificial square ices can be viewed as reconfigurable and tunable magnonic crystals that can be used as metamaterials for spin-wave-based applications at the nanoscale.
Oehlert, A. M.; Hill, C. A.; Piggot, A. M.; Fouke, B. W.
2008-12-01
As one of the core reservoirs of primary production in the world's oceans, tropical coral reefs support a complex ecosystem that directly impacts over ninety percent of marine organisms at some point in their life cycle. Corals themselves are highly complex organisms and exhibit a range of growth forms that range from branching to massive, foliaceous, columnar, encrusting, free living and laminar coralla. Fierce competition over scarce resources available to each individual coral species creates niche specialization. Throughout the Phanerozic geological record, this has driven speciation events and created distinct skeletal growth morphologies that have differential abilities in feeding strategy. In turn, this has presumably led to the development of niche specialization that can be quantitatively measured through hierarchical morphological differences from the micrometer to the meter scale. Porter (1976) observed significant differences in skeletal morphology between Caribbean coral species that reflects an adaptive geometry based on feeding strategy. Within the Montastraea species complex there are four major morphologies; columnar, bouldering, irregular mounding, and skirted. Each morphotype can be found forming high abundance along the bathymetric gradient of coral reefs that grow along the leeward coast of Curacao, Netherlands Antilles. We have undertaken a study to determine the relative relationships amongst coral morphology, skeletal density and feeding strategy by comparing the morphometric measurements of individual polyps as well as the entire colony along spatial and bathymetric gradients. Polyp diameter, mouth size, interpolyp area, and interpolyp distance were measured from high-resolution images taken on a stereoscope, and evaluated with AxioVision image analysis software. These high-resolution optical analyses have also revealed new observations regarding folded tissue structures of the outer margin of polyps in the Montastrea complex. Skeletal
Band structure of the quasi two-dimensional purple molybdenum bronze
Guyot, H.; Balaska, H.; Perrier, P.; Marcus, J.
2006-09-01
The molybdenum purple bronze KMo 6O 17 is quasi two-dimensional (2D) metallic oxide that shows a Peierls transition towards a metallic charge density wave state. Since this specific transition is directly related to the electron properties of the normal state, we have investigated the electronic structure of this bronze at room temperature. The shape of the Mo K1s absorption edge reveals the presence of distorted MoO 6 octahedra in the crystallographic structure. Photoemission experiments evidence a large conduction band, with a bandwidth of 800 meV and confirm the metallic character of this bronze. A wide depleted zone separates the conduction band from the valence band that exhibits a fourfold structure, directly connected to the octahedral symmetry of the Mo sites. The band structure is determined by ARUPS in two main directions of the (0 0 1) Brillouin zone. It exhibits some unpredicted features but corroborates the earlier theoretical band structure and Fermi surface. It confirms the hidden one-dimensionality of KMo 6O 17 that has been proposed to explain the origin of the Peierls transition in this 2D compound.
Photonic Band Gap structures: A new approach to accelerator cavities
Kroll, N. [California Univ., San Diego, La Jolla, CA (United States). Dept. of Physics]|[Stanford Linear Accelerator Center, Menlo Park, CA (United States); Smith, D.R.; Schultz, S. [California Univ., San Diego, La Jolla, CA (United States). Dept. of Physics
1992-12-31
We introduce a new accelerator cavity design based on Photonic Band Gap (PGB) structures. The PGB cavity consists of a two-dimensional periodic array of high dielectric, low loss cylinders with a single removal defect, bounded on top and bottom by conducting sheets. We present the results of both numerical simulations and experimental measurements on the PGB cavity.
Photonic Band Gap structures: A new approach to accelerator cavities
We introduce a new accelerator cavity design based on Photonic Band Gap (PGB) structures. The PGB cavity consists of a two-dimensional periodic array of high dielectric, low loss cylinders with a single removal defect, bounded on top and bottom by conducting sheets. We present the results of both numerical simulations and experimental measurements on the PGB cavity
The photonic band gap structures of obliquely incident electromagnetic waves propagating in a one-dimension plasma photonic crystal with collision have been studied on the basis of electromagnetic theory and transfer matrix approach. The dispersion relations for both the transverse electric wave case and the transverse magnetic wave case are deduced. And the photonic band gap structures, with their function dependence on the microplasma layer density, microplasma width, collision frequency, background material dielectric constant, and incident angle, are computed. The results show that there exist two photonic band gap structures in an adsorptive plasma photonic crystal: one is a normal photonic band gap structure and the other is an absorption photonic band gap structure. Parameter dependence of the effects is calculated and discussed.
X-Band Photonic Band-Gap Accelerator Structure Breakdown Experiment
Marsh, Roark A.; /MIT /MIT /NIFS, Gifu /JAERI, Kyoto /LLNL, Livermore; Shapiro, Michael A.; Temkin, Richard J.; /MIT; Dolgashev, Valery A.; Laurent, Lisa L.; Lewandowski, James R.; Yeremian, A.Dian; Tantawi, Sami G.; /SLAC
2012-06-11
In order to understand the performance of photonic band-gap (PBG) structures under realistic high gradient, high power, high repetition rate operation, a PBG accelerator structure was designed and tested at X band (11.424 GHz). The structure consisted of a single test cell with matching cells before and after the structure. The design followed principles previously established in testing a series of conventional pillbox structures. The PBG structure was tested at an accelerating gradient of 65 MV/m yielding a breakdown rate of two breakdowns per hour at 60 Hz. An accelerating gradient above 110 MV/m was demonstrated at a higher breakdown rate. Significant pulsed heating occurred on the surface of the inner rods of the PBG structure, with a temperature rise of 85 K estimated when operating in 100 ns pulses at a gradient of 100 MV/m and a surface magnetic field of 890 kA/m. A temperature rise of up to 250 K was estimated for some shots. The iris surfaces, the location of peak electric field, surprisingly had no damage, but the inner rods, the location of the peak magnetic fields and a large temperature rise, had significant damage. Breakdown in accelerator structures is generally understood in terms of electric field effects. These PBG structure results highlight the unexpected role of magnetic fields in breakdown. The hypothesis is presented that the moderate level electric field on the inner rods, about 14 MV/m, is enhanced at small tips and projections caused by pulsed heating, leading to breakdown. Future PBG structures should be built to minimize pulsed surface heating and temperature rise.
Band Structure Modifications in Deformed InP Quantum Wires
V.V. Kuryliuk
2014-11-01
Full Text Available The work describes the features of the band structure of deformed InP nanowires with different diameters. It is shown that the bending of quantum wires is capable of creating local minima in the conduction and valence bands which are separated from the surface of the cylindrical wire. This result opens up new possibilities for controlling both the lifetime of photoexcited carriers by keeping them at these minima and the magnitude of the photovoltage in solar energy conversion devices based on quantum wires. The work lies within a common goal aiming to develop new methods of functionalization of nanostructured surfaces using mechanical deformations.
Multi-band and broadband acoustic metamaterial with resonant structures
We design an acoustic metamaterial (AM) with multi-band of negative modulus composed of different sized split hollow spheres (SHSs). From acoustic transmitted experiment, the AM exhibits simultaneously negative modulus at frequencies 914, 1298 and 1514 Hz. Based on the multi-band designed concept, broadband AM is fabricated by arraying gradually sized SHS. The transmission results indicate that this medium can achieve negative modulus at the frequency range from 900 to 1500 Hz. This kind of broadband AM is very convenient to couple with other structures to gain the double-negative AM.
Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors
A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k→) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg1−xCdxTe, and In1−xGaxAsyP1−y lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors
Coupling effect of quantum wells on band structure
Jie, Chen; Weiyou, Zeng
2015-10-01
The coupling effects of quantum wells on band structure are numerically investigated by using the Matlab programming language. In a one dimensional finite quantum well with the potential barrier V0, the calculation is performed by increasing the number of inserted barriers with the same height Vb, and by, respectively, varying the thickness ratio of separated wells to inserted barriers and the height ratio of Vb to V0. Our calculations show that coupling is strongly influenced by the above parameters of the inserted barriers and wells. When these variables change, the width of the energy bands and gaps can be tuned. Our investigation shows that it is possible for quantum wells to achieve the desired width of the bands and gaps.
Coupling effect of quantum wells on band structure
The coupling effects of quantum wells on band structure are numerically investigated by using the Matlab programming language. In a one dimensional finite quantum well with the potential barrier V0, the calculation is performed by increasing the number of inserted barriers with the same height Vb, and by, respectively, varying the thickness ratio of separated wells to inserted barriers and the height ratio of Vb to V0. Our calculations show that coupling is strongly influenced by the above parameters of the inserted barriers and wells. When these variables change, the width of the energy bands and gaps can be tuned. Our investigation shows that it is possible for quantum wells to achieve the desired width of the bands and gaps. (paper)
QUANTITATIVE ANALYSIS OF BANDED STRUCTURES IN DUAL-PHASE STEELS
Benoit Krebs
2011-05-01
Full Text Available Dual-Phase (DP steels are composed of martensite islands dispersed in a ductile ferrite matrix, which provides a good balance between strength and ductility. Current processing conditions (continuous casting followed by hot and cold rolling generate 'banded structures' i.e., irregular, parallel and alternating bands of ferrite and martensite, which are detrimental to mechanical properties and especially for in-use properties. We present an original and simple method to quantify the intensity and wavelength of these bands. This method, based on the analysis of covariance function of binary images, is firstly tested on model images. It is compared with ASTM E-1268 standard and appears to be more robust. Then it is applied on real DP steel microstructures and proves to be sufficiently sensitive to discriminate samples resulting from different thermo-mechanical routes.
Mid-frequency Band Dynamics of Large Space Structures
Coppolino, Robert N.; Adams, Douglas S.
2004-01-01
High and low intensity dynamic environments experienced by a spacecraft during launch and on-orbit operations, respectively, induce structural loads and motions, which are difficult to reliably predict. Structural dynamics in low- and mid-frequency bands are sensitive to component interface uncertainty and non-linearity as evidenced in laboratory testing and flight operations. Analytical tools for prediction of linear system response are not necessarily adequate for reliable prediction of mid-frequency band dynamics and analysis of measured laboratory and flight data. A new MATLAB toolbox, designed to address the key challenges of mid-frequency band dynamics, is introduced in this paper. Finite-element models of major subassemblies are defined following rational frequency-wavelength guidelines. For computational efficiency, these subassemblies are described as linear, component mode models. The complete structural system model is composed of component mode subassemblies and linear or non-linear joint descriptions. Computation and display of structural dynamic responses are accomplished employing well-established, stable numerical methods, modern signal processing procedures and descriptive graphical tools. Parametric sensitivity and Monte-Carlo based system identification tools are used to reconcile models with experimental data and investigate the effects of uncertainties. Models and dynamic responses are exported for employment in applications, such as detailed structural integrity and mechanical-optical-control performance analyses.
Band structure, cohesive properties, and Compton profile of γ- and α-cerium
Podloucky, R.; Glötzel, D.
1983-03-01
Recent Compton scattering experiments on the high-volume (γ) and low-volume (α) phases of fcc cerium and their interpretation in terms of the renormalized-free-atom model cast severe doubts on the promotional model of Pauling and Zachariasen for the γ-α transition. Stimulated by these results, we have extended a previous self-consistent local-density band-structure investigation to study the Compton profiles of γ- and α-cerium. For the band structure, Bloch functions, and their Fourier transforms we use the linear muffin-tin orbital method in the atomic-sphere approximation. We analyze the calculated Compton profiles in terms of band structure and local angular momentum character of the wave functions. The change in band structure and wave functions under compression (with approximately one electron per atom in the 4f band of both phases) accounts well for the observed change in the Compton profile. This provides further evidence against the promotional model in agreement with the analysis of Kornstädt et al. In addition, we study the cohesive energy of fcc cerium as a function of volume in the local-density approximation. For α-cerium in the 4f1(5d 6s)3 configuration we find a cohesive energy of 5.4 eV/atom in good agreement with experiment, whereas the "promotional" 4f0(5d 6s)4 state yields a binding energy of 0.6 eV/atom only. Therefore the fourth valence electron has to be a 4f electron, and α-cerium has to be regarded as an f-band metal.
We report here a mean-field study of competing antiferromagnetism, superconductivity and lattice strain phases and their effect on the local density of states of the cuprate system. Our model Hamiltonian incorporating these interactions is reported earlier [G.C. Rout et al., Physica C, 2007]. The analytic expression for superconducting, antiferromagnetism and lattice strain order parameters are calculated and solved self-consistently. The interplay of these order parameters is investigated considering the calculated density of states (DOSs) of the conduction electrons. The DOS displays multiple gap structures with multiple peaks. It is suggested that the tunneling conductance data obtained from the scanning tunneling microscopy (STM) measurements could be interpreted by using the quasi-particle bands calculated from our model Hamiltonian. We have discussed the mechanism to calculate the order parameters from the conductance data.
Photoelectron energy distribution curves from solid nitrogen have been measured for excitation energies ranging from threshold (14.2 eV) to 40 eV using Synchrotron Radiation. The partial cross sections for the emission from the 3sigmasub(g), 1πsub(u) and 2sigmasub(u) derived valence bands show pronounced maxima 3.4 eV, 2.9 eV and 3.0 eV above the vacuum level respectively which we interpret as being due to a high density of conduction band final states. These states are closely related to the πsub(g)* negative-ion shape resonance for molecular nitrogen. (orig.)
First-Principles Band Calculations on Electronic Structures of Ag-Doped Rutile and Anatase TiO2
HOU Xing-Gang; LIU An-Dong; HUANG Mei-Dong; LIAO Bin; WU Xiao-Ling
2009-01-01
The electronic structures of Ag-doped rutile and anatase TiO2 are studied by first-principles band calculations based on density funetionai theory with the full-potentiai linearized-augraented-plane-wave method.New occupied bands ore found between the band gaps of both Ag-doped rutile and anatase TiO2.The formation of these new bands Capri be explained mainly by their orbitals of Ag 4d states mixed with Ti 3d states and are supposed to contribute to their visible light absorption.
The band structure of metallic sodium is calculated, using for the first time the self-consistent field variational cellular method. In order to implement the self-consistency in the variational cellular theory, the crystal electronic charge density was calculated within the muffin-tin approximation. The comparison between our results and those derived from other calculations leads to the conclusion that the proposed self-consistent version of the variational cellular method is fast and accurate. (author)
S Chakraborty; R Ramesh; J M Lough
2000-03-01
Density, 18O and 13C were measured along two tracks, one close to the central growth axis and the other, ∼20° off the axis, in a coral (Porites lutea) collected from the Stanley Reef, Central Great Barrier Reef, Australia. The 18O variations in the coral are well correlated with sea surface temperature changes. The common variances between the two tracks were about 60% in the 18O, 13C and the skeletal density variations. Part of the noise (40%) could be due to the difficulty of sampling exactly time contemporaneous parts of each band along the two tracks and part of it could be due to genuine intraband variability. In spite of the intraband variability, the time series obtained from the two tracks are similar, indicating that the dominant causative factor for the isotopic variations is external, i.e., the environmental conditions that prevail during the growth of the coral; density band formation does not appear to be directly controlled by the sea surface temperature.
Development of X-band accelerating structures for high gradients
S. Bini; M. G. Grimaldi; L. Romano; F. Ruffino; R. Parodi; V. Chimenti; A. Marcelli; L. Palumbo; B. Spataro; V. A. Dolgashev; S. Tantawi; A.D. Yeremian; Y. Higashi
2012-01-01
Short copper standing wave (SW) structures operating at an X-band frequency have been recently designed and manufactured at the Laboratori Nazionali di Frascati of the Istituto Nazionale di Fisica Nucleare (INFN) using the vacuum brazing technique.High power tests of the structures have been performed at the SLAC National Accelerator Laboratory.In this manuscript we report the results of these tests and the activity in progress to enhance the high gradient performance of the next generation of structures,particularly the technological characterization of high performance coatings obtained via molybdenum sputtering.
Engineering Design of a Multipurpose X-band Accelerating Structure
Gudkov, Dmitry; Samoshkin, Alexander; Zennaro, Riccardo; Dehler, Micha; Raguin, Jean-Yves
2010-01-01
Both FEL projects, SwissFEL and Fermi-Elettra each require an X-band RF accelerating structure for optimal bunch compression at the respective injectors. As the CLIC project is pursuing a program for producing and testing the X-band high-gradient RF structures, a collaboration between PSI, Elettra and CERN has been established to build a multipurpose X-band accelerating structure. This paper focuses on its engineering design, which is based on the disked cells jointed together by diffusion bonding. Vacuum brazing and laser beam welding is used for auxiliary components. The accelerating structure consists of two coupler subassemblies, 73 disks and includes a wakefield monitor and diagnostic waveguides. The engineering study includes the external cooling system, consisting of two parallel cooling circuits and an RF tuning system, which allows phase advance tuning of the cell by deforming the outer wall. The engineering solution for the installation and sealing of the wake field monitor feed-through devices that...
Ultrafast Band Structure Control of a Two-Dimensional Heterostructure.
Ulstrup, Søren; Čabo, Antonija Grubišić; Miwa, Jill A; Riley, Jonathon M; Grønborg, Signe S; Johannsen, Jens C; Cacho, Cephise; Alexander, Oliver; Chapman, Richard T; Springate, Emma; Bianchi, Marco; Dendzik, Maciej; Lauritsen, Jeppe V; King, Phil D C; Hofmann, Philip
2016-06-28
The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and interlayer interactions. Here, using time- and angle-resolved photoemission, we are able to isolate both the layer-resolved band structure and, more importantly, the transient band structure evolution of a model 2D heterostructure formed of a single layer of MoS2 on graphene. Our results reveal a pronounced renormalization of the quasiparticle gap of the MoS2 layer. Following optical excitation, the band gap is reduced by up to ∼400 meV on femtosecond time scales due to a persistence of strong electronic interactions despite the environmental screening by the n-doped graphene. This points to a large degree of tunability of both the electronic structure and the electron dynamics for 2D semiconductors embedded in a van der Waals-bonded heterostructure. PMID:27267820
The calculation of the band structure in 3D phononic crystal with hexagonal lattice
Aryadoust, Mahrokh; Salehi, H. [University of Shahid Chamran, Ahvaz (Iran, Islamic Republic of). Dept. of Physics
2015-07-01
In this article, the propagation of acoustic waves in the phononic crystals (PCs) of three dimensions with the hexagonal (HEX) lattice is studied theoretically. The PCs are constituted of nickel (Ni) spheres embedded in epoxy. The calculations of the band structure and the density of states are performed using the plane wave expansion (PWE) method in the irreducible part of the Brillouin zone (BZ). In this study, we analyse the dependence of the band structures inside (the complete band gap width) on c/a and filling fraction in the irreducible part of the first BZ. Also, we have analysed the band structure of the ALHA and MLHKM planes. The results show that the maximum width of absolute elastic band gap (AEBG) (0.045) in the irreducible part of the BZ of HEX lattice is formed for c/a=6 and filling fraction equal to 0.01. In addition, the maximum of the first and second AEBG widths are 0.0884 and 0.0474, respectively, in the MLHKM plane, and the maximum of the first and second AEBG widths are 0.0851 and 0.0431, respectively, in the ALHA plane.
Study of the band structures in 104Pd
Complete text of publication follows. During the past years, beside the A ∼ 130 mass region, chiral candidate twin bands have been found also in odd-odd and odd-mass rhodium isotopes with A ∼ 100. The role of triaxial deformation of the core in degeneracy of chiral band doubling has been pointed out in 102Ru and 103Rh. More recently, a study of 106Ag has revealed that gamma softness has marked implications for the phenomenon of nuclear chirality. In order to further examine this effect on the stability of chiral geometry we studied the band structures of 104Pd, the core nucleus of 106Ag. High-spin states in 104Pd have been studied through the 96Zr(13C,5n) reaction at beam energies of 51 and 58 MeV, using the Euroball IV γ-ray spectrometer. The γ rays were measured in coincidence with charged particles detected by the Diamant array in order to eliminate the contaminants from the stronger (13C,xn) reaction channels. A total of ∼ 2 x 109 triple- and higher-fold coincidence events were stored among which ∼ 4.5 x 108 belonged to the 104Pd reaction channel. On the basis of the analysis of γγγ-coincidence data, several new high-spin bands have been established. The ground state band has been extended up to Ex ∼12 MeV with Iπ=(26+), while the previously published negative-parity bands have been extended up to Ex ∼11 and ∼9 MeV with Iπ=(23-) and (20-), respectively. The theoretical interpretation of the experimental results obtained is in progress
Air Density Measurements in a Mach 10 Wake Using Iodine Cordes Bands
Balla, Robert J.; Everhart, Joel L.
2012-01-01
An exploratory study designed to examine the viability of making air density measurements in a Mach 10 flow using laser-induced fluorescence of the iodine Cordes bands is presented. Experiments are performed in the NASA Langley Research Center 31 in. Mach 10 air wind tunnel in the hypersonic near wake of a multipurpose crew vehicle model. To introduce iodine into the wake, a 0.5% iodine/nitrogen mixture is seeded using a pressure tap at the rear of the model. Air density was measured at 56 points along a 7 mm line and three stagnation pressures of 6.21, 8.62, and 10.0 MPa (900, 1250, and 1450 psi). Average results over time and space show rho(sub wake)/rho(sub freestream) of 0.145 plus or minus 0.010, independent of freestream air density. Average off-body results over time and space agree to better than 7.5% with computed densities from onbody pressure measurements. Densities measured during a single 60 s run at 10.0 MPa are time-dependent and steadily decrease by 15%. This decrease is attributed to model forebody heating by the flow.
Calculation of complex band structure for low symmetry lattices
Srivastava, Manoj; Zhang, Xiaoguang; Cheng, Hai-Ping
2009-03-01
Complex band structure calculation is an integral part of a first-principles plane-wave based quantum transport method. [1] The direction of decay for the complex wave vectors is also the transport direction. The existing algorithm [1] has the limitation that it only allows the transport direction along a lattice vector perpendicular to the basal plane formed by two other lattice vectors, e.g., the c-axis of a tetragonal lattice. We generalize this algorithm to nonorthogonal lattices with transport direction not aligned with any lattice vector. We show that this generalization leads to changes in the boundary conditions and the Schrodinger's equation projected to the transport direction. We present, as an example, the calculation of the complex band structure of fcc Cu along a direction perpendicular to the (111) basal plane. [1] Hyoung Joon Choi and Jisoon Ihm, Phys. Rev. B 59, 2267 (1999).
Parameterization and algebraic structure of 3-band orthogonal wavelet systems
无
2001-01-01
In this paper, a complete parameterization for the 3-band compact wavelet systems is presented. Using the parametric result, a program of the filterbank design is completed, which can give not only the filterbanks but also the graphs of all possible scaling functions and their corresponding wavelets. Especially some symmetric wavelets with small supports are given. Finally an algebraic structure for this kind of wavelet systems is characterized.
The structure of rotational bands in alpha-cluster nuclei
Bijker Roelof
2015-01-01
Full Text Available In this contribution, I discuss an algebraic treatment of alpha-cluster nuclei based on the introduction of a spectrum generating algebra for the relative motion of the alpha-clusters. Particular attention is paid to the discrete symmetry of the geometric arrangement of the α-particles, and the consequences for the structure of the rotational bands in the 12C and 16O nuclei.
Intermediate band solar cell structures grown by MOVPE
Vyskočil, Jan; Zíková, Markéta; Hospodková, Alice; Oswald, Jiří; Petříček, Otto; Pangrác, Jiří
Lund: Nanometer Structure Consortium, 2015 - (Ghalamestani, S.; Lundfald, L.), s. 191-194 [EWMOVPE XVI - 16th European Workshop on Metalorganic Vapor Phase Epitaxy. Lund (SE), 07.06.2015-10.06.2015] R&D Projects: GA ČR(CZ) GP14-21285P Institutional support: RVO:68378271 Keywords : InAs * GaAsSb * quantum dot * intermediate band solar cell s Subject RIV: BM - Solid Matter Physics ; Magnetism
Band structural properties of MoS2 (molybdenite)
Semiconductivity and superconductivity in MoS2 (molybdenite) can be understood in terms of the band structure of MoS2. The band structural properties of MoS2 are presented here. The energy dependence of nsub(eff) and epsilon(infinity)sub(eff) is investigated. Using calculated values of nsub(eff) and epsilon(infinity)sub(eff), the Penn gap has been determined. The value thus obtained is shown to be in good agreement with the reflectivity data and also with the value obtained from the band structure. The Ravindra and Srivastava formula has been shown to give values for the isobaric temperature gradient of Esub(G)[(deltaEsub(G)/deltaT)sub(P)], which are in agreement with the experimental data, and the contribution to (deltaEsub(G)/deltaT)sub(P) due to the electron lattice interaction has been evaluated. In addition, the electronic polarizability has been calculated using a modified Lorentz-Lorenz relation. (author)
We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical VG above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge
Band gap and electronic structure of MgSiN2
Density functional theory calculations and electron energy loss spectroscopy indicate that the electronic structure of ordered orthorhombic MgSiN2 is similar to that of wurtzite AlN. A band gap of 5.7 eV was calculated for both MgSiN2 (indirect) and AlN (direct) using the Heyd-Scuseria-Ernzerhof approximation. Correction with respect to the experimental room-temperature band gap of AlN indicates that the true band gap of MgSiN2 is 6.2 eV. MgSiN2 has an additional direct gap of 6.3 eV at the Γ point.
Band gap and electronic structure of MgSiN{sub 2}
Quirk, J. B., E-mail: james.quirk09@imperial.ac.uk; Råsander, M.; McGilvery, C. M.; Moram, M. A. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Palgrave, R. [Department of Chemistry, University College London, Gordon Street WC1H 0AJ (United Kingdom)
2014-09-15
Density functional theory calculations and electron energy loss spectroscopy indicate that the electronic structure of ordered orthorhombic MgSiN{sub 2} is similar to that of wurtzite AlN. A band gap of 5.7 eV was calculated for both MgSiN{sub 2} (indirect) and AlN (direct) using the Heyd-Scuseria-Ernzerhof approximation. Correction with respect to the experimental room-temperature band gap of AlN indicates that the true band gap of MgSiN{sub 2} is 6.2 eV. MgSiN{sub 2} has an additional direct gap of 6.3 eV at the Γ point.
Electronic band structure and photoemission: A review and projection
A brief review of electronic-structure calculations in solids, as a means of interpreting photoemission spectra, is presented. The calculations are, in general, of three types: ordinary one-electron-like band structures, which apply to bulk solids and are the basis of all other calculations; surface modified calculations, which take into account, self-consistently if at all possible, the presence of a vacuum-solid interface and of the electronic modifications caused thereby; and many-body calculations, which go beyond average-field approximations and consider dynamic rearrangement effects caused by electron-electron correlations during the photoemission process. 44 refs
Structure of high-spin bands in 104Pd
Complete text of publication follows. High-spin states of 104Pd were studied through the 96Zr(13C,5n) reaction at beam energies of 51 and 58 MeV, using the Euroball IV γ-ray spectrometer in conjunction with the Diamant charged particle array. On the basis of the analysis of γγγ-coincidence data, the previously known rotation-like structures (bands 1,2,3,4) have been extended up to Ex∼6, 13, 11 and 9 MeV with Iπ=(12+), (26+), (23-) and (20-), respectively. Besides the major sideband structures, two new negative parity cascades (bands 5,6) were found and built up to Ex∼8 MeV with Iπ=(17-) and (18-). The 104Pd nucleus with its 6 valence protons and 8 valence neutrons relative to 90Zr lies in the upper part of the g9/2 proton subshell and in the middle part of the d5/2, g7/2 neutron subshell where the low-Ωh11/2 orbitals intrude already at small deformations. To get a deeper insight into the structure of the observed bands, total routhian surface (trs) calculations based on the Woods-Saxon cranking formalism were performed. Comparing the experimental Routhians E' and aligned angular momenta Ix with the trs results (Fig. 1), we assign two-quasiparticle ν(h11/2)2 configuration to the positive-parity bands 1 and 2. According to this expectation, the alignment of a h11/2 neutron pair is clearly visible at ℎω∼0.4 MeV frequency with nearly the full possible alignment gain of ∼10ℎ. As in the negative-parity bands 3,4,5 and 6 the νh11/2 alignment seems to be blocked, their configuration contains one neutron in the h11/2 orbit. Furthermore, the second quasineutron is expected to have a g7/2, d5/2 origin due to their parity. This assumption is supported by the good agreement of the experimental data with the trs results and accordingly we suggest νh11/2(d5/2, g7/2) configurations for these bands.
Study on Band Structure of YbB6 and Analysis of Its Optical Conductivity Spectrum
无
2007-01-01
The electronic structure of YbB6 crystal was studied by means of density functional (GGA+U) method.The calculations were performed by FLAPW method.The high accurate band structure was achieved.The correlation between the feature of the band structure and the Yb-B6 bonding in YbB6 was analyzed.On this basis, some optical constants of YbB6 such as reflectivity, dielectric function, optical conductivity, and energy-loss function were calculated.The results are in good agreement with the experiments.The real part of the optical conductivity spectrum and the energy-loss function spectrum were analyzed in detail.The assignments of the spectra were carried out to correlate the spectral peaks with the interband electronic transitions, which justify the reasonable part of previous empirical assignments and renew the missed or incorrect ones.
Tang, Chi-Pui, E-mail: duncantcp@yahoo.com.hk [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Lunar and Planetary Science Laboratory, Macau University of Science and Technology, Macau (Macao); Cao, Jie [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Xiong, Shi-Jie, E-mail: sjxiong@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)
2015-06-15
On basis of the first principle calculation we show that a crystalline structure of silicon, as a novel allotrope with nanotubular holes along two perpendicular directions, is stable. The calculations on geometrical and electronic properties reveal that this allotrope possesses a direct band gap wider by 0.5 eV than the indirect one of silicon with diamond structure. The crystal belongs to I41/AMD space group, showing anisotropic optical properties and Young modulus. The bulk modulus is 64.4 GPa and the density is 1.9 g/cm{sup 3}, lower than that of the diamond silicon due to the presence of nanotubular holes. It is hopeful that the allotrope may widely expand applications of silicon in many fields due to its direct band gap and specific nanotubular structure.
Band structure and itinerant magnetism in quantum critical NbFe2
Subedi, A. P. [University of Tennessee, Knoxville (UTK); Singh, David J [ORNL
2010-01-01
We report first-principles calculations of the band structure and magnetic ordering in the C14 Laves phase compound NbFe{sub 2}. The magnetism is itinerant in the sense that the moments are highly dependent on ordering. We find an overestimation of the magnetic tendency within the local spin-density approximation, similar to other metals near magnetic quantum critical points. We also find a competition between different magnetic states due to band-structure effects. These lead to competing magnetic tendencies due to competing interlayer interactions, one favoring a ferrimagnetic solution and the other an antiferromagnetic state. While the structure contains Kagome lattice sheets, which could, in principle, lead to strong magnetic frustration, the calculations do not show dominant nearest-neighbor antiferromagnetic interactions within these sheets. These results are discussed in relation to experimental observations.
On basis of the first principle calculation we show that a crystalline structure of silicon, as a novel allotrope with nanotubular holes along two perpendicular directions, is stable. The calculations on geometrical and electronic properties reveal that this allotrope possesses a direct band gap wider by 0.5 eV than the indirect one of silicon with diamond structure. The crystal belongs to I41/AMD space group, showing anisotropic optical properties and Young modulus. The bulk modulus is 64.4 GPa and the density is 1.9 g/cm3, lower than that of the diamond silicon due to the presence of nanotubular holes. It is hopeful that the allotrope may widely expand applications of silicon in many fields due to its direct band gap and specific nanotubular structure
Band structure and electron-phonon coupling in H3S : A tight-binding model
Ortenzi, L.; Cappelluti, E.; Pietronero, L.
2016-08-01
We present a robust tight-binding description, based on the Slater-Koster formalism, of the band structure of H3S in the Im3 ¯m structure, stable in the range of pressure P =180 -220 GPa. We show that the interatomic hopping between the 3 s and 3 p orbitals (and partially between the 3 p orbitals themselves) of sulfur is fundamental to capturing the relevant physics associated with the Van Hove singularities close to the Fermi level. Comparing the model so defined with density functional theory calculations we obtain a very good agreement not only of the overall band structure but also of the low-energy states and the Fermi surface properties. The description in terms of Slater-Koster parameters permits us also to evaluate at a microscopic level a hopping-resolved linear electron-lattice coupling which can be employed for further tight-binding analyses also at a local scale.
k.p Parameters with Accuracy Control from Preexistent First-Principles Band Structure Calculations
Sipahi, Guilherme; Bastos, Carlos M. O.; Sabino, Fernando P.; Faria Junior, Paulo E.; de Campos, Tiago; da Silva, Juarez L. F.
The k.p method is a successful approach to obtain band structure, optical and transport properties of semiconductors. It overtakes the ab initio methods in confined systems due to its low computational cost since it is a continuum method that does not require all the atoms' orbital information. From an effective one-electron Hamiltonian, the k.p matrix representation can be calculated using perturbation theory and the parameters identified by symmetry arguments. The parameters determination, however, needs a complementary approach. In this paper, we developed a general method to extract the k.p parameters from preexistent band structures of bulk materials that is not limited by the crystal symmetry or by the model. To demonstrate our approach, we applied it to zinc blende GaAs band structure calculated by hybrid density functional theory within the Heyd-Scuseria-Ernzerhof functional (DFT-HSE), for the usual 8 ×8 k.p Hamiltonian. Our parameters reproduced the DFT-HSE band structure with great accuracy up to 20% of the first Brillouin zone (FBZ). Furthermore, for fitting regions ranging from 7-20% of FBZ, the parameters lie inside the range of values reported by the most reliable studies in the literature. The authors acknowledge financial support from the Brazilian agencies CNPq (Grant #246549/2012-2) and FAPESP (Grants #2011/19333-4, #2012/05618-0 and #2013/23393-8).
Electronic band structure of the layered compound Td-WTe2
Augustin, J.; Eyert, V.; Böker, Th.; Frentrup, W.; Dwelk, H.; Janowitz, C.; Manzke, R.
2000-10-01
We have studied the electronic structure of the layered compound Td-WTe2 experimentally using high-resolution angle-resolved photoelectron spectroscopy, and theoretically using density-functional based augmented spherical wave calculations. Comparison of the measured and calculated data shows in general good agreement. The theoretical results reveal the semimetallic as well as metallic character of Td-WTe2; the semimetallic character is due to a 0.5 eV overlap of Te 5p- and W 5d-like bands along Γ-Y, while the metallic character is due to two classical metallic bands. The rather low conductivity of Td-WTe2 is interpreted as resulting from a low density of states at the Fermi level.
Band-Gap Modulation of GeCH3 Nanoribbons Under Elastic Strain: A Density Functional Theory Study
Ma, ShengQian; Li, Feng; Jiang, ChunLing
2016-06-01
Using the density functional theory method, we researched the band-gap modulation of GeCH3 nanoribbons under uniaxial elastic strain. The results indicated that the band gap of GeCH3 nanoribbons could be tuned along two directions, namely, stretching or compressing ribbons when ɛ was changed from -10% to 10% in 6-zigzag, 10-zigzag, 13-armchair, and 17-armchair nanoribbons, respectively. The band gap greatly changed with strain. In the case of tension, the amount of change in the band gap was bigger. But in the case of compression, the gradient was steeper. The band gap had a nearly linear relationship when ɛ ranges from 0% to 10%. We also investigated if the band gap is changed with widths. The results showed variation of the band gap did not rely on widths. Therefore, the GeCH3 nanoribbons had the greatest potential application in strain sensors and optical electronics at the nanoscale.
Dual-band metamaterial with a windmill-like structure
A broadband negative refractive index metamaterial based on a windmill-like structure is proposed, and investigated numerically and experimentally at the microwave frequency range. From the numerical and experimental results, effect media parameters are retrieved, which clearly show that two broad frequency bands exist in which the permittivity and permeability are negative. The two negative bands are from 9.1 GHz to 10.5 GHz and from 12.05 GHz to 14.65 GHz respectively, and the negative bandwidth is 4 GHz. Due to the good bandwidth performance, the metallic cell with double negative property obtained in this paper is suitable for use in the design of multiband or broadband microwave devices. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)
Simple metamaterial structure enabling triple-band perfect absorber
Two resonators in metamaterial usually correspond only to two absorption peaks. In this report, by breaking the symmetry, we could create multi-fundamental resonances at GHz frequencies in both simulation and experiment. First, a dual-band metamaterial absorber (MA) was achieved for 4.6 and 10.6 GHz. Next, by modifying the relative position of inner square, the triple-band MA was obtained with enhanced absorption properties. In addition, dependence on the polarization of the incident electromagnetic (EM) wave was clarified. The mechanism is elucidated to be an alteration of the coupling strength, which is made by changing the geometrical configuration of the inner square and the outer ring. It is shown that our structural configuration can be applied to the fields where the interaction with a wide range of EM waves exists or is needed. (paper)
Carricart-Ganivet, J. P.; Vásquez-Bedoya, L. F.; Cabanillas-Terán, N.; Blanchon, P.
2013-09-01
Density banding in skeletons of reef-building corals is a valuable source of proxy environmental data. However, skeletal growth strategy has a significant impact on the apparent timing of density-band formation. Some corals employ a strategy where the tissue occupies previously formed skeleton during as the new band forms, which leads to differences between the actual and apparent band timing. To investigate this effect, we collected cores from female and male colonies of Siderastrea siderea and report tissue thicknesses and density-related growth parameters over a 17-yr interval. Correlating these results with monthly sea surface temperature (SST) shows that maximum skeletal density in the female coincides with low winter SSTs, whereas in the male, it coincides with high summer SSTs. Furthermore, maximum skeletal densities in the female coincide with peak Sr/Ca values, whereas in the male, they coincide with low Sr/Ca values. Both results indicate a 6-month difference in the apparent timing of density-band formation between genders. Examination of skeletal extension rates also show that the male has thicker tissue and extends faster, whereas the female has thinner tissue and a denser skeleton—but both calcify at the same rate. The correlation between extension and calcification, combined with the fact that density banding arises from thickening of the skeleton throughout the depth reached by the tissue layer, implies that S. siderea has the same growth strategy as massive Porites, investing its calcification resources into linear extension. In addition, differences in tissue thicknesses suggest that females offset the greater energy requirements of gamete production by generating less tissue, resulting in differences in the apparent timing of density-band formation. Such gender-related offsets may be common in other corals and require that environmental reconstructions be made from sexed colonies and that, in fossil corals where sex cannot be determined
Alpha-cluster structure and density wave in oblate nuclei
Kanada-En'yo, Yoshiko; Hidaka, Yoshimasa
2011-01-01
Pentagon and triangle shapes in Si-28 and C-12 are discussed in relation with nuclear density wave. In the antisymmetrized molecular dynamics calculations, the $K^\\pi=5^-$ band in Si-28 and the $K^\\pi=3^-$ band in C-12 are described by the pentagon and triangle shapes, respectively. These negative-parity bands can be interpreted as the parity partners of the $K^\\pi=0^+$ ground bands and they are constructed from the parity-asymmetric-intrinsic states. The pentagon and the triangle shapes orig...
Wakefield Monitor Experiments with X-Band Accelerating Structures
Lillestøl, Reidar; Corsini, Roberto; Döbert, Steffen; Farabolini, Wilfrid; Malina, Lukas; Pfingstner, Juergen; Wuensch, Walter
2015-01-01
The accelerating structures for CLIC must be aligned with a precision of a few um with respect to the beam trajectory in order to mitigate emittance growth due to transverse wake fields. We report on first results from wake field monitor tests in an X-band structure, with a probe beam at the CLIC Test Facility. The monitors are currently installed in the CLIC Two-Beam Module. In order to fully demonstrate the feasibility of using wakefield monitors for CLIC, the precision of the monitors must be verified using a probe beam while simultaneously filling the structure with high power rf used to drive the accelerating mode. We outline plans to perform such a demonstration in the CLIC Test Facility.
Collective Band Structures in Neutron-Rich 108Mo Nucleus
DING Huai-Bo; WANG Jian-Guo; XU Qiang; ZHU Sheng-Jiang; J. H. Hamilton; A. V. Ramayya; J. K. Hwang; Y. X. Luo; J. O. Rasmussen; I. Y. Lee; CHE Xing-Lai
2007-01-01
High spin states in the neutron-rich 108Mo nucleus are studied by measuring prompt γ-rays following the spontaneous fission of 252Cf with a Gammasphere detector array. The ground-state band is confirmed, and the one-phonon γ-vibrational band is updated with spin up to 12 h. A new collective band with the band head level at 1422.4 keV is suggested as a two-phonon γ-vibrational band. Another new band is proposed as a two-quasi-proton excitation band. Systematic characteristics of the collective bands are discussed.
Schwöbel, André, E-mail: aschwoebel@surface.tu-darmstadt.de [Technische Universität Darmstadt, Materials Science Department, Surface Science Division, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany); Precht, Ruben; Motzko, Markus; Carrillo Solano, Mercedes A. [Technische Universität Darmstadt, Materials Science Department, Surface Science Division, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany); Calvet, Wolfram [Helmholzzentrum Berlin GmbH, Solar Energy Research, Heterogeneous Materials Systems, Albert Einstein Straße 15, 12489 Berlin (Germany); Hausbrand, René; Jaegermann, Wolfram [Technische Universität Darmstadt, Materials Science Department, Surface Science Division, Jovanka-Bontschits-Str. 2, 64287 Darmstadt (Germany)
2014-12-01
Highlights: • In situ photoemission of LiPON solid Li-ion electrolyte. • We find that the valence band is similar to the known phosphates. • We find evidence for a resonance at the O1s edge shown by a Fano profile. • We find that the top of the valence band is due to N2p states. - Abstract: Lithium phosphorus oxynitride (LiPON) is a solid state electrolyte commonly used in thin film batteries (TFBs). Advanced TFBs face the issue of detrimental electrode–electrolyte interlayer formation, related to the electronic structure of the interface. In this contribution, we study the valence band structure of LiPON using resonant photoemission and synchrotron photoemission with variable excitation energies. The identification of different valence band features is done according to the known valence band features of meta- and orthophosphates. Additionally we compare our results with partial density of states simulations from literature. We find that the valence band structure is similar to the known metaphosphates with an additional contribution of nitrogen states at the top of the valence band. From the results we conclude that synchrotron X-ray photoemission (XPS) is a useful tool to study the valence band structure of nitridated alkali phosphate glasses.
Highlights: • In situ photoemission of LiPON solid Li-ion electrolyte. • We find that the valence band is similar to the known phosphates. • We find evidence for a resonance at the O1s edge shown by a Fano profile. • We find that the top of the valence band is due to N2p states. - Abstract: Lithium phosphorus oxynitride (LiPON) is a solid state electrolyte commonly used in thin film batteries (TFBs). Advanced TFBs face the issue of detrimental electrode–electrolyte interlayer formation, related to the electronic structure of the interface. In this contribution, we study the valence band structure of LiPON using resonant photoemission and synchrotron photoemission with variable excitation energies. The identification of different valence band features is done according to the known valence band features of meta- and orthophosphates. Additionally we compare our results with partial density of states simulations from literature. We find that the valence band structure is similar to the known metaphosphates with an additional contribution of nitrogen states at the top of the valence band. From the results we conclude that synchrotron X-ray photoemission (XPS) is a useful tool to study the valence band structure of nitridated alkali phosphate glasses
Analysis of photonic band-gap structures in stratified medium
Tong, Ming-Sze; Yinchao, Chen; Lu, Yilong;
2005-01-01
Purpose - To demonstrate the flexibility and advantages of a non-uniform pseudo-spectral time domain (nu-PSTD) method through studies of the wave propagation characteristics on photonic band-gap (PBG) structures in stratified medium Design/methodology/approach - A nu-PSTD method is proposed in...... the occasions where the spatial distributions contain step of up to five times larger than the original size, while simultaneously the flexibility of non-uniform sampling offers further savings on computational storage. Research limitations/implications - Research has been mainly limited to the simple...
Band structure in the polymer quantization of the harmonic oscillator
We discuss the detailed structure of the spectrum of the Hamiltonian for the polymerized harmonic oscillator and compare it with the spectrum in the standard quantization. As we will see the non-separability of the Hilbert space implies that the point spectrum consists of bands similar to the ones appearing in the treatment of periodic potentials. This feature of the spectrum of the polymeric harmonic oscillator may be relevant for the discussion of the polymer quantization of the scalar field and may have interesting consequences for the statistical mechanics of these models. (paper)
Band structures of a dipolar Bose-Einstein condensate in one-dimensional lattices
Lin, Yuanyao; Lee, Ray-Kuang; Kao, Yee-Mou; Jiang, Tsin-Fu
2008-08-01
We derive the effective Gross-Pitaevskii equation for a cigar-shaped dipolar Bose-Einstein condensate in one-dimensional lattices and investigate the band structures numerically. Due to the anisotropic and the long-ranged dipole-dipole interaction in addition to the known contact interaction, we elucidate the possibility of modifying the band structures by changing the alignment of the dipoles with the axial direction. With the considerations of the transverse parts and the practical physical parameters of a cigar-shaped trap, we show the possibility to stabilize an attractive condensate simply by adjusting the orientation angle of dipoles. Some interesting Bloch waves at several particle current densities are identified for possible experimental observations.
Ardisana, R. N.; Miller, C. A.; Sivaguru, M.; Fouke, B. W.
2013-12-01
Corals are a key reservoir of biodiversity in coastal, shallow water tropical marine environments, and density banding in their aragonite skeletons is used as a sensitive record of paleoclimate. Therefore, the cellular response of corals to environmental change and its expression in skeletal structure is of significant importance. Chromatophores, pigment-bearing cells within the ectoderm of hermatypic corals, serve to both enhance the photosynthetic activity of zooxanthellae symbionts, as well as protect the coral animal from harmful UV radiation. Yet connections have not previously been drawn between chromatophore tissue density and the development of skeletal density bands. A histological analysis of the coral Montastrea faveolata has therefore been conducted across a bathymetric gradient of 1-20 m on the southern Caribbean island of Curaçao. A combination of field and laboratory photography, serial block face imaging (SBFI), two-photon laser scanning microscopy (TPLSM), and 3D image analysis has been applied to test whether M. faveolata adapts to increasing water depth and decreasing photosynthetically active radiation by shifting toward a more heterotrophic lifestyle (decreasing zooxanthellae tissue density, increasing mucocyte tissue density, and decreasing chromatophores density). This study is among the first to collect and evaluate histological data in the spatial context of an entire unprocessed coral polyp. TPLSM was used to optically thin section unprocessed tissue biopsies with quantitative image analysis to yield a nanometer-scale three-dimensional map of the quantity and distribution of the symbionts (zooxanthellae) and a host fluorescent pigments (chromatophores), which is thought to have photoprotective properties, within the context of an entire coral polyp. Preliminary results have offered new insight regarding the three-dimensional distribution and abundance of chromatophores and have identified: (1) M. faveolata tissue collected from 8M SWD do
Engineered band structure for an enhanced performance on quantum dot-sensitized solar cells
Jin, Bin Bin; Wang, Ye Feng; Wei, Dong; Cui, Bin; Chen, Yu; Zeng, Jing Hui
2016-06-01
A photon-to-current efficiency of 2.93% is received for the Mn-doped CdS (MCdS)-quantum dot sensitized solar cells (QDSSCs) using Mn:ZnO (MZnO) nanowire as photoanode. Hydrothermal synthesized MZnO are spin-coated on fluorine doped tin oxide (FTO) glass with P25 paste to serve as photoanode after calcinations. MCdS was deposited on the MZnO film by the successive ionic layer adsorption and reaction method. The long lived excitation energy state of Mn2+ is located inside the conduction band in the wide bandgap ZnO and under the conduction band of CdS, which increases the energetic overlap of donor and acceptor states, reducing the "loss-in-potential," inhibiting charge recombination, and accelerating electron injection. The engineered band structure is well reflected by the electrochemical band detected using cyclic voltammetry. Cell performances are evidenced by current density-voltage (J-V) traces, diffuse reflectance spectra, transient PL spectroscopy, and incident photon to current conversion efficiency characterizations. Further coating of CdSe on MZnO/MCdS electrode expands the light absorption band of the sensitizer, an efficiency of 4.94% is received for QDSSCs.
Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele
2016-01-01
We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k · p and non-parabolic effective mass models. Parameter sets for the non-parabolic Γ, the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In0.53Ga0.47 As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III-V semiconductor band structure calculation methods and calibrated band parameters for device simulations.
Karakalos, S.; Ladas, S. [Department of Chemical Engineering, University of Patras and FORTH/ICE-HT, POB 1414, 26504 Rion (Patras) (Greece); Janecek, P.; Sutara, F.; Nehasil, V. [Department of Electronic and Vacuum Physics, Charles University, V.Holesovickach 2, 18000 Prague 8 (Czech Republic); Tsud, N. [Sincrotrone Trieste, Strada Statale 14, km 163.5, 34012 Basovizza-Trieste (Italy); Prince, K. [Sincrotrone Trieste, Strada Statale 14, km 163.5, 34012 Basovizza-Trieste (Italy); INFM, Laboratorio TASC, in Area Science Park, Strada Statale 14, km 163.5, 34012 Basovizza-Trieste (Italy); Matolin, V. [Department of Electronic and Vacuum Physics, Charles University, V.Holesovickach 2, 18000 Prague 8 (Czech Republic); Chab, V. [Institute of Physics, Czech Academy of Sciences, Cucrovarnicka 10, 16200 Prague (Czech Republic); Papanicolaou, N.I. [Department of Physics, University of Ioannina, P.O. Box 1186, 45110 Ioannina (Greece)], E-mail: nikpap@uoi.gr; Dianat, A.; Gross, A. [Institute of Theoretical Chemistry, University of Ulm, D-89069 Ulm (Germany)
2008-03-31
Photoelectron spectroscopy using synchrotron radiation and ab-initio electronic structure calculations were used in order to describe the fine structure of the valence band in the Sn/Ni(111) system. The characteristic contributions of each metal in the valence band photoemission spectra obtained with a photon energy of 80 eV and their changes upon the formation of the ({radical}3 x {radical}3)R30{sup o} Sn/Ni(111) surface alloy were also born out in the calculated density-of-states curves in fair agreement with the experiments. The Sn-Ni interaction leads to a considerable broadening of the valence band width at the bimetallic surfaces.
Density functional calculation of band-parameters for boron nitride at normal and high pressures
The present work employs the total-energy pseudopotential technique within the framework of the density-functional theory with both the local-density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange-correlation functional so as to calculate the structural, electronic, chemical bonding and elastic properties of BN in the zinc-blende structure at normal and high pressures. The results are generally in good agreement with the available experimental data. We found that in many cases (except may be for elastic constants) the GGA improves agreement with experiment. The calculations showed that the transition pressure for BN from the zinc-blende phase to the rocksalt phase is much smaller than previously reported theoretical values
The photonic band gap of obliquely incident terahertz electromagnetic waves in a one-dimensional plasma photonic crystal is studied. The periodic structure consists of lossless dielectric and inhomogeneous plasma with a parabolic density profile. The dispersion relation and the THz wave transmittance are analyzed based on the electromagnetic equations and transfer matrix method. The dependence of effective plasma frequency and photonic band gap characteristics on dielectric and plasma thickness, plasma density, and incident angle are discussed in detail. A theoretical calculation for effective plasma frequency is presented and compared with numerical results. Results of these two methods are in good agreement
Askari, Nasim; Eslami, Esmaeil, E-mail: eeslami@iust.ac.ir [Department of Physics, Iran University of Science & Technology, Narmak, Tehran 16846-13114 (Iran, Islamic Republic of); Mirzaie, Reza [Department of Physics, Shahid Beheshti University, G. C., Evin, Tehran 1983969411 (Iran, Islamic Republic of)
2015-11-15
The photonic band gap of obliquely incident terahertz electromagnetic waves in a one-dimensional plasma photonic crystal is studied. The periodic structure consists of lossless dielectric and inhomogeneous plasma with a parabolic density profile. The dispersion relation and the THz wave transmittance are analyzed based on the electromagnetic equations and transfer matrix method. The dependence of effective plasma frequency and photonic band gap characteristics on dielectric and plasma thickness, plasma density, and incident angle are discussed in detail. A theoretical calculation for effective plasma frequency is presented and compared with numerical results. Results of these two methods are in good agreement.
Structure of negative parity yrast bands in odd mass 125-131Ce nuclei
Arun Bharti; Suram Singh; S K Khosa
2010-04-01
The negative parity yrast bands of neutron-deficient 125-131Ce nuclei are studied by using the projected shell model approach. Energy levels, transition energies and (1)/(2) ratios are calculated and compared with the available experimental data. The calculations reproduce the band-head spins of negative parity yrast bands and indicate the multi-quasiparticle structure for these bands.
Photonic Band Gaps in 3D Network Structures with Short-range Order
Liew, Seng Fatt; Noh, Heeso; Schreck, Carl F; Dufresne, Eric R; O'Hern, Corey S; Cao, Hui
2011-01-01
We present a systematic study of photonic band gaps (PBGs) in three-dimensional (3D) photonic amorphous structures (PAS) with short-range order. From calculations of the density of optical states (DOS) for PAS with different topologies, we find that tetrahedrally connected dielectric networks produce the largest isotropic PBGs. Local uniformity and tetrahedral order are essential to the formation of PBGs in PAS, in addition to short-range geometric order. This work demonstrates that it is possible to create broad, isotropic PBGs for vector light fields in 3D PAS without long-range order.
Photonic band gaps in three-dimensional network structures with short-range order
We present a systematic study of photonic band gaps (PBGs) in three-dimensional (3D) photonic amorphous structures (PASs) with short-range order. From calculations of the density of optical states (DOS) for PASs with different topologies, we find that tetrahedrally connected dielectric networks produce the largest isotropic PBGs. Local uniformity and tetrahedral order are essential to the formation of PBGs in PASs, in addition to short-range geometric order. This work demonstrates that it is possible to create broad, isotropic PBGs for vector light fields in 3D PASs without long-range order.
Influence of Structural Parameters on a Novel Metamaterial Absorber Structure at K-band Frequency
Cuong, Tran Manh; Thuy, Nguyen Thi; Tuan, Le Anh
2016-05-01
Metamaterials nowadays continue to gain attention thanks to their special electromagnetic characteristics. An increasing number of studies are being conducted on the absolute electromagnetic absorber configurations of high impedance surface materials at a certain frequency band. These configurations are usually fabricated with a layer of metal structure based on a dielectric sheet. In this study, we present an optimal design of a novel electromagnetic absorber metamaterial configuration working at a 23-GHz frequency range (K band).
Measured intrinsic defect density throughout the entire band gap at the Si/SiO2 interface
Sands, D.; Brunson, K. M.; Tayarani-Najaran, M. H.
1992-08-01
Conductance-frequency measurements down to temperatures of 100 K have been performed on both p-type and n-type silicon oxidized in dry oxygen at 900 degrees C. The metal electrode capacitors used were not given a post-metallization anneal in forming gas. This has allowed measurements of the intrinsic density of states, capture cross section, and surface potential fluctuations to within 0.06 eV of the band edges. Two peaks in the defect density at energies of 0.3 eV and 0.85 eV above the valence band are clearly visible above an asymmetric background, which rises rapidly towards the conduction band edge. The capture cross section is near constant at approximately 1016 cm2 across the gap and independent of temperature. The surface potential fluctuations reveal a peak value of approximately 70 meV centred at 0.4 eV above the valence band superimposed on a constant background of approximately 40 meV. The authors attribute the peaks in the density of states to the amphoteric trivalent silicon Pb centres. The probable causes of the asymmetric background are either the tail of a defect peak centred around the conduction band edge, or states descending from the conduction band induced by stress within the oxide.
X-band coaxial standing-wave linear accelerator structure
A new high efficiency X-Band, standing-wave linear accelerator cavity structure has been developed. It utilizes a shaped coaxial cavity as the coupling cavity between accelerating cavities for π/2 mode operation, hence the overall diameter is extremely small while maintaining a very high shunt impedance. The coupling cavity and accelerating cavity are easily machined on opposite sides of a single cell, eliminating any subassembly steps. Cavity geometries were developed using the computer codes LACC and LALA. Prototype 1.5 MeV and 4.0 MeV, 20 cm long accelerators are now under development. The accelerators employ a stepped field focusing technique to keep the beam focused at low field levels. The beam dynamics code PARMELA was used to optimize the longitudinal bunching and transverse beam characteristics. The accelerator design parameters, as well as experimental results, are presented
Measuring large-scale structure with quasars in narrow-band filter surveys
Abramo, L. Raul; Strauss, Michael A.; Lima, Marcos; Hernández-Monteagudo, Carlos; Lazkoz, Ruth; Moles, Mariano; de Oliveira, Claudia Mendes; Sendra, Irene; Sodré, Laerte; Storchi-Bergmann, Thaisa
2012-07-01
We show that a large-area imaging survey using narrow-band filters could detect quasars in sufficiently high number densities, and with more than sufficient accuracy in their photometric redshifts, to turn them into suitable tracers of large-scale structure. If a narrow-band optical survey can detect objects as faint as i= 23, it could reach volumetric number densities as high as 10-4 h3 Mpc-3 (comoving) at z˜ 1.5. Such a catalogue would lead to precision measurements of the power spectrum up to z˜ 3-4. We also show that it is possible to employ quasars to measure baryon acoustic oscillations at high redshifts, where the uncertainties from redshift distortions and non-linearities are much smaller than at z≲ 1. As a concrete example we study the future impact of the Javalambre Physics of the Accelerating Universe Astrophysical Survey (J-PAS), which is a narrow-band imaging survey in the optical over 1/5 of the unobscured sky with 42 filters of ˜100-Å full width at half-maximum. We show that J-PAS will be able to take advantage of the broad emission lines of quasars to deliver excellent photometric redshifts, σz≃ 0.002 (1 +z), for millions of objects.
Measuring large-scale structure with quasars in narrow-band filter surveys
Abramo, L Raul; Lima, Marcos; Hernández-Monteagudo, Carlos; Lazkoz, Ruth; Moles, Mariano; de Oliveira, Cláudia M; Sendra, Irene; Sodré, Laerte
2011-01-01
We show that a large-area imaging survey using narrow-band filters could detect quasars in sufficiently high number densities, and with more than sufficient accuracy in their photometric redshifts, to turn them into suitable tracers of large-scale structure. If a narrow-band optical survey can detect objects as faint as i=23, it could reach volumetric number densities as high as 10^{-4} h^3 Mpc^{-3} (comoving) at z~1.5 . Such a catalog would lead to precision measurements of the power spectrum up to z~3-4. We also show that it is possible to employ quasars to measure baryon acoustic oscillations at high redshifts, where the uncertainties from redshift distortions and nonlinearities are much smaller than at z<1. As a concrete example we study the future impact of J-PAS, which is a narrow-band imaging survey in the optical over 1/5 of the unobscured sky with 42 filters of ~100 A full-width at half-maximum. We show that J-PAS will be able to take advantage of the broad emission lines of quasars to deliver exc...
Band structure and optical functions of K2ZnCl4 crystals in ferroelectric phase
Band electronic structure (BS), density of states (DOS), and optical functions of K2ZnCl4 crystal for the orthorhombic space group of symmetry Pna21 corresponding to the ferroelectric phase (12 formula units in the crystallographic unit cell) have been calculated for the first time using the density functional theory based code VASP (Vienna Ab-initio Simulation Program). The valence-to-conduction band gap Eg of the crystal is found to be direct in the Γ-point of Brillouin zone. The effective masses m* have been calculated for the top valence and bottom conduction bands for different points and directions of Brillouin zone of the crystal and the results obtained have been analyzed. Peculiarities of the photon energy dependences n(E) and k(E) of refractive (n) and absorption (k) indices obtained in the range 0-28 eV have been identified on the basis of BS and DOS of the crystal. Calculated optical functions agree satisfactorily with the experimental data n(E) in the range of crystal's transparency, E < 5 eV.
Role of interface band structure on hot electron transport
Garramone, John J.
Knowledge of electron transport through materials and interfaces is fundamentally and technologically important. For example, metal interconnects within integrated circuits suffer increasingly from electromigration and signal delay due to an increase in resistance from grain boundary and sidewall scattering since their dimensions are becoming shorter than the electron mean free path. Additionally, all semiconductor based devices require the transport of electrons through materials and interfaces where scattering and parallel momentum conservation are important. In this thesis, the inelastic and elastic scattering of hot electrons are studied in nanometer thick copper, silver and gold films deposited on silicon substrates. Hot electrons are electron with energy greater than kBT above the Fermi level (EF). This work was performed utilizing ballistic electron emission microscopy (BEEM) which is a three terminal scanning tunneling microscopy (STM) technique that measures the percentage of hot electrons transmitted across a Schottky barrier interface. Hot electron attenuation lengths of the metals were extracted by measuring the BEEM current as a function of metal overlayer thickness for both hot electron and hot hole injection at 80 K and under ultra high vacuum. The inelastic and elastic scattering lengths were extracted by fitting the energetic dependence of the measured attenuation lengths to a Fermi liquid based model. A sharp increase in the attenuation length is observed at low injection energies, just above the Schottky barrier height, only for metals on Si(001) substrates. In contrast, the attenuation length measured on Si(111) substrates shows a sharp decrease. These results indicate that interface band structure and parallel momentum conservation have significant impact upon the transport of hot electrons across non epitaxial metal-semiconductor interfaces. In addition, they help to separate effects upon hot electron transport that are inherent to the metal
Photonic band gaps with layer-by-layer double-etched structures
Periodic layer-by-layer dielectric structures with full three-dimensional photonic band gaps have been designed and fabricated. In contrast to previous layer-by-layer structures the rods in each successive layer are at an angle of 70.5 degree to each other, achieved by etching both sides of a silicon wafer. Photonic band-structure calculations are utilized to optimize the photonic band gap by varying the structural geometry. The structure has been fabricated by double etching Si wafers producing millimeter wave photonic band gaps between 300 and 500 GHz, in excellent agreement with band calculations. Overetching this structure produces a multiply connected geometry and increases both the size and frequency of the photonic band gap, in very good agreement with experimental measurements. This new robust double-etched structure doubles the frequency possible from a single Si wafer, and can be scaled to produced band gaps at higher frequencies. copyright 1996 American Institute of Physics
The electronic structure of the high-Tc copper oxides is calculated by means of an extended two-dimensional three-band Hubbard model in the unrestricted Hartree-Fock approximation. The influence of the coupling parameters on the obtained bands, as well as their doping dependence are investigated especially at the Fermi surface. Results are discussed in the light of recent experimental data for the cuprate Fermi surfaces. A comparative analysis of these conflicting data on the basis of our results sheds some light on the interpretation of the measured band structures. The direct oxygen-oxygen hopping interaction is found to be essential in fitting experimental results, suggesting that, in the doped regime, the oxygen band plays a key role at least in the near-EF region. Antiferromagnetic correlations among copper atoms turn out as well to be crucial. The results agree remarkably well with previous local-density calculations and with spectroscopic measurements
Computing the band structure and energy gap of penta-graphene by using DFT and G0W0 approximations
Einollahzadeh, H.; Dariani, R. S.; Fazeli, S. M.
2016-03-01
In this paper, we consider the optimum coordinate of the penta-graphene. Penta-graphene is a new stable carbon allotrope which is stronger than graphene. Here, we compare the band gap of penta-graphene with various density functional theory (DFT) methods. We plot the band structure of penta-graphene which calculated with the generalized gradient approximation functional HTCH407, about Fermi energy. Then, one-shot GW (G0W0) correction for precise computations of band structure is applied. Quasi-direct band gap of penta-graphene is obtained around 4.1-4.3 eV by G0W0 correction. Penta-graphene is an insulator and can be expected to have broad applications in future, especially in nanoelectronics and nanomechanics.
Nuclear energy density optimization: Shell structure
Kortelainen, M; Nazarewicz, W; Olsen, E; Reinhard, P -G; Sarich, J; Schunck, N; Wild, S M; Davesne, D; Erler, J; Pastore, A
2013-01-01
Nuclear density functional theory is the only microscopical theory that can be applied throughout the entire nuclear landscape. Its key ingredient is the energy density functional. In this work, we propose a new parameterization UNEDF2 of the local Skyrme energy density functional. The functional optimization is carried out using the POUNDerS optimization algorithm within the framework of the Skyrme Hartree-Fock-Bogoliubov theory. Compared to the previous parameterization UNEDF1, restrictions on the tensor term of the energy density have been lifted, yielding the most general form of the Skyrme energy density functional up to second order in derivatives of the one-body local density. In order to impose constraints on all the parameters of the functional, selected data on single-particle splittings in spherical doubly-magic nuclei have been included into the experimental dataset. The agreement with both bulk and spectroscopic nuclear properties achieved by the resulting UNEDF2 parameterization is comparable wi...
Nuclear energy density optimization: Shell structure
Kortelainen, M.; McDonnell, J.; W. Nazarewicz; Olsen, E; Reinhard, P. -G.; Sarich, J.; Schunck, N.; Wild, S. M.; Davesne, D.; Erler, J.; Pastore, A.
2013-01-01
Nuclear density functional theory is the only microscopical theory that can be applied throughout the entire nuclear landscape. Its key ingredient is the energy density functional. In this work, we propose a new parameterization UNEDF2 of the Skyrme energy density functional. The functional optimization is carried out using the POUNDerS optimization algorithm within the framework of the Skyrme Hartree-Fock-Bogoliubov theory. Compared to the previous parameterization UNEDF1, restrictions on th...
Three-dimensional structure of low-density nuclear matter
Okamoto, Minoru, E-mail: okamoto@nucl.ph.tsukuba.ac.jp [Graduate School of Pure and Applied Science, University of Tsukuba, Tennoudai 1-1-1, Tsukuba, Ibaraki 305-8571 (Japan); Advanced Science Research Center, Japan Atomic Energy Agency, Shirakata Shirane 2-4, Tokai, Ibaraki 319-1195 (Japan); Maruyama, Toshiki, E-mail: maruyama.toshiki@jaea.go.jp [Advanced Science Research Center, Japan Atomic Energy Agency, Shirakata Shirane 2-4, Tokai, Ibaraki 319-1195 (Japan); Graduate School of Pure and Applied Science, University of Tsukuba, Tennoudai 1-1-1, Tsukuba, Ibaraki 305-8571 (Japan); Yabana, Kazuhiro, E-mail: yabana@nucl.ph.tsukuba.ac.jp [Graduate School of Pure and Applied Science, University of Tsukuba, Tennoudai 1-1-1, Tsukuba, Ibaraki 305-8571 (Japan); Center of Computational Sciences, University of Tsukuba, Tennoudai 1-1-1, Tsukuba, Ibaraki 305-8571 (Japan); Tatsumi, Toshitaka, E-mail: tatsumi@ruby.scphys.kyoto-u.ac.jp [Department of Physics, Kyoto University, Kyoto 606-8502 (Japan)
2012-07-09
We numerically explore the pasta structures and properties of low-density nuclear matter without any assumption on the geometry. We observe conventional pasta structures, while a mixture of the pasta structures appears as a metastable state at some transient densities. We also discuss the lattice structure of droplets.
QUANTUM-MECHANICAL MODELING OF SPATIAL AND BAND STRUCTURE OF Y3AL5O12 SCINTILLATION CRYSTAL
I. I. Vrubel
2016-05-01
Full Text Available Spatial and electronic structures of a unit cell of yttrium-aluminum garnet have been studied. Quantum-mechanical model have been presented. Semi-empirical methods PM6 and PM7 have been used for geometry optimization of the crystal unit cell. Band structure has been calculated within density functional theory with the use of PBE exchange-correlation functional. Histograms of metal-oxygen distances for equilibrium geometry have been constructed. Comparison of the used methods has been carried out and recommendation about their applicability for such problems was given. The single-particle wave functions and energies have been calculated. The bandgap was estimated. The band structure was plotted. It was shown that the method gives reliable results for spatial and band structure of Y3Al5O12 scintillation crystal. The results of this work can be used for improvement of characteristics of garnet scintillation crystals.
The papers connected with the calculation of the energetic band structure of elements of the beginning and the end of the third transition period, such as Lu, Hf, Ir, Pt and Au, are considered. It is noted that the best agreement between theoretical and experimental ata is observed in casds when the crystalline potential is plotted on relativistic wave functions with complete Slater exchange. The application of the relativistic method of attached flat waves to calculate band structure and partial densities of transition metal states is considered. The effect of relativistic effects on the energetic band structure and energy distribution of complete and partical densities of states of the elements of the third transition period is discussed
Phononic Band Gaps in 2D Quadratic and 3D Cubic Cellular Structures
Franziska Warmuth
2015-12-01
Full Text Available The static and dynamic mechanical behaviour of cellular materials can be designed by the architecture of the underlying unit cell. In this paper, the phononic band structure of 2D and 3D cellular structures is investigated. It is shown how the geometry of the unit cell influences the band structure and eventually leads to full band gaps. The mechanism leading to full band gaps is elucidated. Based on this knowledge, a 3D cellular structure with a broad full band gap is identified. Furthermore, the dependence of the width of the gap on the geometry parameters of the unit cell is presented.
Enlargement of Photonic Band Gaps and Physical Picture of Photonic Band Structures
ZHANG Yan; SHI Jun-Jie
2006-01-01
@@ Light propagation in a one-dimensional photonic crystal (PC), consisting of alternative slabs with refractive indices (layer thicknesses) n1 (a) and n2 (b), is investigated. An important optimal parameter matching condition,n1a ≈ n2b, is obtained for the largest photonic band gap (PBG). Moreover, we find that the exact analytical solutions for the electric/magnetic field eigenmodes at the band edges are standing waves with odd or even symmetry about the centre of each layer. The electric/magnetic field eigenfunctions at the top and bottom of the nth band have n and n - 1 nodes in one period of PC, respectively. The PBG arises from the symmetric differences of the field eigenfunctions at the band edges.
Hyperspectral bands prediction based on inter-band spectral correlation structure
Ahmed, Ayman M.; Sharkawy, Mohamed El.; Elramly, Salwa H.
2013-02-01
Hyperspectral imaging has been widely studied in many applications; notably in climate changes, vegetation, and desert studies. However, such kind of imaging brings a huge amount of data, which requires transmission, processing, and storage resources for both airborne and spaceborne imaging. Compression of hyperspectral data cubes is an effective solution for these problems. Lossless compression of the hyperspectral data usually results in low compression ratio, which may not meet the available resources; on the other hand, lossy compression may give the desired ratio, but with a significant degradation effect on object identification performance of the hyperspectral data. Moreover, most hyperspectral data compression techniques exploits the similarities in spectral dimensions; which requires bands reordering or regrouping, to make use of the spectral redundancy. In this paper, we analyze the spectral cross correlation between bands for AVIRIS and Hyperion hyperspectral data; spectral cross correlation matrix is calculated, assessing the strength of the spectral matrix, we propose new technique to find highly correlated groups of bands in the hyperspectral data cube based on "inter band correlation square", and finally, we propose a new technique of band regrouping based on correlation values weights for different group of bands as network of correlation.
DeHaas-vanAlphen Effect and LMTO Band-structure of LaSn3
Boulet, R. M.; Jan, J. -P.; Skriver, Hans Lomholt
1982-01-01
Results of de Haas-van Alphen experiments in the intermetallic compound LaSn3 can be explained by a linear muffin-tin orbital band structure calculation without involving the f bands of lanthanum.......Results of de Haas-van Alphen experiments in the intermetallic compound LaSn3 can be explained by a linear muffin-tin orbital band structure calculation without involving the f bands of lanthanum....
The effects of band structure on recombination processes in narrow gap materials and laser diodes
The work described in this thesis investigates the effects of band structure modifications, brought about by Landau confinement, hydrostatic pressure and uniaxial stress, on recombination processes in narrow-gap materials and laser diodes. The effects of Landau confinement on the characteristics of InSb-based emission devices operating at a wavelength of ∼5μm at 77K were studied. The change in performance due to the magnetic field applied along both the cavity and the growth direction and thereby simulating quasi-quantum wire and quasi-quantum dot structures clearly demonstrated the benefits, such as reduced threshold and temperature sensitivity, gained by the reduced dimensionality. On the other hand, suppression of LO-phonon emission due to the discrete nature of the density of states was observed, for the first time, in an interband laser device. Interband recombination dynamics were studied in In1-xGaxSb and PbSe over a range of excited carrier densities and temperatures down to 30K. Detailed analysis of the results found that the Auger-1 mechanism is reduced in In1-xGaxSb as a function of Ga-fraction due to the increased bandgap energy, in good agreement with theoretical predictions. In PbSe, the Auger-1 rate was observed to dominate at low excited carrier concentrations in spite of near-mirror bands, and was found to be approximately constant between 300K and 70K and was seen to be quenched in the low temperature regime. Stimulated emission was seen to be the most efficient recombination mechanism at high excited carrier densities at low temperatures. The Auger coefficient in PbSe was found to be one to two orders of magnitude lower than for materials with a Kane band structure (Hg1-xCdxTe) with comparable bandgap. An experimental technique was developed which enables measurements at high hydrostatic pressures and high magnetic fields at low temperatures. Hydrostatic pressures were applied to a 1.5μm laser diode at different temperatures revealing the
True photonic band-gap mode-control in VCSEL structures
Romstad, F.; Madsen, M.; Birkedal, Dan;
2003-01-01
Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect.......Photonic band-gap mode confinement in novel nano-structured large area VCSEL structures is confirmed by the amplified spontaneous emission spectrum. Both guide and anti-guide VCSEL structures are experimentally characterised to verify the photonic band-gap effect....
Photonic-band-gap effects in two-dimensional polycrystalline and amorphous structures
We study numerically the density of optical states (DOS) in two-dimensional photonic structures with short-range positional order and observe a transition from polycrystalline to amorphous photonic systems. In polycrystals, photonic band gaps (PBGs) are formed within individual domains, which leads to a depletion of the DOS similar to that in periodic structures. In amorphous photonic media, the domain sizes are too small to form PBGs, thus the depletion of the DOS is weakened significantly. The critical domain size that separates the polycrystalline and amorphous regimes is determined by the attenuation length of Bragg scattering, which depends not only on the degree of positional order but also the refractive-index contrast of the photonic material. Even with relatively low-refractive-index contrast, we find that modest short-range positional order in photonic structures enhances light confinement via collective scattering and interference.
2016-01-01
We report valence and conduction band densities of states measured via ultraviolet and inverse photoemission spectroscopies on three metal halide perovskites, specifically methylammonium lead iodide and bromide and cesium lead bromide (MAPbI3, MAPbBr3, CsPbBr3), grown at two different institutions on different substrates. These are compared with theoretical densities of states (DOS) calculated via density functional theory. The qualitative agreement achieved between experiment and theory leads to the identification of valence and conduction band spectral features, and allows a precise determination of the position of the band edges, ionization energy and electron affinity of the materials. The comparison reveals an unusually low DOS at the valence band maximum (VBM) of these compounds, which confirms and generalizes previous predictions of strong band dispersion and low DOS at the MAPbI3 VBM. This low DOS calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites. PMID:27364125
Endres, James; Egger, David A; Kulbak, Michael; Kerner, Ross A; Zhao, Lianfeng; Silver, Scott H; Hodes, Gary; Rand, Barry P; Cahen, David; Kronik, Leeor; Kahn, Antoine
2016-07-21
We report valence and conduction band densities of states measured via ultraviolet and inverse photoemission spectroscopies on three metal halide perovskites, specifically methylammonium lead iodide and bromide and cesium lead bromide (MAPbI3, MAPbBr3, CsPbBr3), grown at two different institutions on different substrates. These are compared with theoretical densities of states (DOS) calculated via density functional theory. The qualitative agreement achieved between experiment and theory leads to the identification of valence and conduction band spectral features, and allows a precise determination of the position of the band edges, ionization energy and electron affinity of the materials. The comparison reveals an unusually low DOS at the valence band maximum (VBM) of these compounds, which confirms and generalizes previous predictions of strong band dispersion and low DOS at the MAPbI3 VBM. This low DOS calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites. PMID:27364125
Handbook of the band structure of elemental solids from Z = 1 to Z = 112
Papaconstantopoulos, Dimitris A
2015-01-01
This handbook presents electronic structure data and tabulations of Slater-Koster parameters for the whole periodic table. This second edition presents data sets for all elements up to Z = 112, Copernicium, whereas the first edition contained only 53 elements. In this new edition, results are given for the equation of state of the elements together with the parameters of a Birch fit, so that the reader can regenerate the results and derive additional information, such as Pressure-Volume relations and variation of Bulk Modulus with Pressure. For each element, in addition to the equation of state, the energy bands, densities of states, and a set of tight-binding parameters is provided. For a majority of elements, the tight-binding parameters are presented for both a two- and three-center approximation. For the hcp structure, new three-center tight-binding results are given. Other new material in this edition include: energy bands and densities of states of all rare-earth metals, a discussion of the McMillan-Gas...
Meaningful structural descriptors from charge density.
Stalke, Dietmar
2011-08-16
This paper provides a short introduction to the basics of electron density investigations. The two predominant approaches for the modelling and various interpretations of electron density distributions are presented. Their potential translations into chemical concepts are explained. The focus of the article lies on the deduction of chemical properties from charge density studies in some selected main group compounds. The relationship between the obtained numerical data and commonly accepted simple chemical concepts unfortunately is not always straightforward, and often the chemist relies on heuristic connections rather than rigorously defined ones. This article tries to demonstrate how charge density analyses can shed light on aspects of chemical bonding and reactivity resulting from the determined bonding situation. Sometimes this helps to identify misconceptions and sets the scene for new unconventional synthetic approaches. PMID:21717511
Guttman, L.
1975-01-15
Three different types of random networks were generated by computer simulation, starting from crystalline arrangements. All are perfectly fourfold coordinated, and satisfy periodic boundary conditions. The valence-band densities of electronic states of the various types are far from featureless and can clearly be distinguished from each other. (auth)
Band structures of ZnTe:O alloys with isolated oxygen and with clustered oxygen impurities
Highlights: • Band structures of ZnTe:O alloy highly depends on the status of oxygen. • Clustered oxygen lowers the bandgap while isolated oxygen increases the bandgap. • The solar adsorption efficiency of ZnTe:O can be improved by oxygen clustering. -- Abstract: First-principles calculations reveal that band structures of ZnTe:O alloys highly depend on the configuration of oxygen in the alloy. For alloys with isolated oxygen, the calculated band structure shows the formation of intermediate states between valence and conduction band and the shift of conduction band to higher energy level. It expands the gap between valence and conduction band. For alloys with clustered oxygen, the formation of intermediate band is still observed, while the gap between valence and conduction band is decreased. For alloys with oxygen impurities adjacent to Zn vacancy, the band structure only shows the decrease of the gap between valence and conduction band without the formation of any intermediate band. These results suggest the critical role of Zn–O bonding in determining the energy level of the impurity states. On the basis of our results, a possible band engineering approach is suggested in order to improve the performance of ZnTe:O alloy as intermediate band solar adsorbent
Photonic band structure of two-dimensional metal/dielectric photonic crystals
An improved plane wave expansion method for the numerical calculation of photonic bands of metal/dielectric photonic crystal (PC) are presented. This method is applied to two-dimensional PCs with frequency-dependent dielectric constants. We obtained the photonic band structure of three kinds of structures: sawtooth, cylinder and hole PCs. The results show that the lowest band-1 is relatively flat, and does not approach zero. Also, there is no complete band-gap that extends throughout the first Brillouin zone for these three structures. However, there are partial band-gaps in different directions in the first Brillouin zone. For the complementary cylinder and hole PCs, their photonic bands are similar except for the lowest three bands; the hole PC’s lowest frequency of band-1 is larger than that of cylinder PC for the configuration R/d = 0.2. (paper)
Electron densities and chemical bonding in TiC, TiN and TiO derived from energy band calculations
It was the aim of this paper to describe the chemical bonding of TiC, TiN and TiO by means of energy bands and electron densities. Using the respective potentials we have calculated the bandstructure of a finer k-grid with the linearized APW method to obtain accurate densities of states (DOS). These DOS wer partitioned into local partial contributions and the metal d DOS were further decomposed into tsub(2g) and esub(g) symmetry components in order to additionally characterize bonding. The electron densities corresponding to the occupied valence states are obtained from the LAPW calculations. They provide further insight into characteristic trends in the series from TiC to TiO: around the nonmetal site the density shows increasing localisation; around the metal site the deviation from spherical symmetry changes from esub(g) to tsub(2g). Electron density plots of characteristic band states allow to describe different types of bonding occurring in these systems. For TiC and TiN recent measurements of the electron densities exist for samples of TiCsub(0.94) and TiNsub(0.99), where defects cause static displacements of the Ti atoms. If this effect can be compensated by an atomic model one hopefully can extrapolate to stoichiometric composition. This procedure allows a comparison with structure factors derived from theoretical electron densities. The agreement for TiN is very good. For TiC the extrapolated data agree in terms of the deviations from spherical symmetry near the Ti site with the LAPW data, but the densities around both atoms are more localized than in theory. An explanation could be: a) the defects affect the electronic structure in TiCsub(0.94) with respect to TiCsub(1.0): b) the applied atomic model does not properly extrapolate to stoichiometry, because parameters of this model correlate or become unphysical. (Author)
Rietveld analysis and electronic bands structure on Tc superconductors systems
A procedure for simultaneous refinement of structural and micro-structural disorder parameters for polycrystalline YBa2Cu3O7-x system is proposed. It is based on Rietveld method combined with Fourier analysis for broadened peaks Another purpose of this paper consists in electronic structure determination studied by using the self-consistent Tight Binding Linear Muffin-Tin Orbital Atomic Spheres Approximation TB-LMTO-ASA methods. The Rietveld method uses an analytical function that describes the profiles, usually pseudo-Voigt (pV) or Pearson VII (PVII). The parameters of the analytical profiles describe its amplitude, position and peak shape. The full width at half maximum (FWHM) is supposed to vary with the diffraction angle in agreement with the Caglioti, Paoletti and Ricci's relationship. The best structural parameters are determined in the least squares sense by the minimisation a classical residual using the Marquardt method. In this case, the peak profiles were modelled by the pseudo-Voigt function corrected by the instrumental asymmetry. The physical information obtained are: scale factor, lattice parameters, atomic position and displacements, atomic occupation numbers, temperature factor (isotropy or anisotropy), preferred orientation parameter, crystalline size and micro-strain along different crystallographic directions, distributions of crystallite size and micro-strain functions. This procedure was implemented on computer code and it has a friendly graphical interface based on pull down menus technique. From the experimental point of view the X-ray diffraction data were collected using a horizontal powder diffractometer in the Bragg-Brentano (BB) geometry with a Ni filtered CuKα, λ = 1.54178 A, at room temperature using a DRON 2 set-up. The diffraction profiles were measured with a proportional gas detector, a single channel pulse-height discrimination and a standard associated counting circuit. The electronic band calculations are based on the TB
Miniaturization of electromagnetic band gap structures for mobile applications
Goussetis, G.; Feresidis, A. P.; Palikaras, G. K.; Kitra, M.; Vardaxoglou, J. C.
2005-12-01
It is well known that interference of the human body affects the performance of the antennas in mobile phone handsets. In this contribution, we investigate the use of miniaturized metallodielectric electromagnetic band gap (MEBG) structures embedded in the case of a mobile handset as a means of decoupling the antenna from the user's hand. The closely coupled MEBG concept is employed to achieve miniaturization of the order of 15:1. Full wave dispersion relations for planar closely coupled MEBG arrays are presented and are validated experimentally. The performance of a prototype handset with an embedded conformal MEBG is assessed experimentally and is compared to a similar prototype without the MEBG. Reduction in the detuning of the antenna because of the human hand by virtue of the MEBG is demonstrated. Moreover, the efficiency of the handset when loaded with a human hand model is shown to improve when the MEBG is in place. The improvements are attributed to the decoupling of the antenna from the user's hand, which is achieved by means of suppressing the fields in the locality of the hand.
Refractory Coated/Lined Low Density Structures Project
National Aeronautics and Space Administration — This project addresses the development of refractory coated or lined low density structures applicable for advanced future propulsion system technologies. The...
Band Structure and Fermi-Surface Properties of Ordered beta-Brass
Skriver, Hans Lomholt; Christensen, N. E.
1973-01-01
The band structure of ordered β-brass (β′-CuZn) has been calculated throughout the Brillouin zone by the augmented-plane-wave method. The present band model differs from previous calculations with respect to the position and width of the Cu 3d band. The derived dielectric function ε2(ω) and the...
The properties of a semiconductor are drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results, we develop strain-compliant local pseudopotentials for use in the empirical pseudopotential method (EPM). We demonstrate that the newly proposed empirical pseudopotentials perform well close to band edges and under anisotropic crystal deformations. Using the EPM, we explore the heavy hole–light hole mixing characteristics under different stress directions, which may be useful in manipulating their transport properties and optical selection rules. The very low 5 Ry cutoff targeted in the generated pseudopotentials paves the way for large-scale EPM-based electronic structure computations involving these lattice mismatched constituents. (paper)
Çakan, Aslı; Sevik, Cem; Bulutay, Ceyhun
2016-03-01
The properties of a semiconductor are drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results, we develop strain-compliant local pseudopotentials for use in the empirical pseudopotential method (EPM). We demonstrate that the newly proposed empirical pseudopotentials perform well close to band edges and under anisotropic crystal deformations. Using the EPM, we explore the heavy hole-light hole mixing characteristics under different stress directions, which may be useful in manipulating their transport properties and optical selection rules. The very low 5 Ry cutoff targeted in the generated pseudopotentials paves the way for large-scale EPM-based electronic structure computations involving these lattice mismatched constituents.
Conduction-band edge and Shubnikov-de Haas effect in low-electron-density SrTiO3
Allen, S. James; Jalan, Bharat; Lee, SungBin; Ouellette, Daniel G.; Khalsa, Guru; Jaroszynski, Jan; Stemmer, Susanne; MacDonald, Allan H.
2013-07-01
The Shubnikov-de Haas effect is used to explore the conduction-band edge of high mobility SrTiO3 films doped with La. The results largely confirm the earlier measurements by Uwe [Jpn. J. Appl. Phys.0021-492210.1143/JJAP.24.L335 24 (Suppl. 24-2), 335 (1985)]. The band edge dispersion differs significantly from the predictions of ab initio electronic structure theory.
Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell
The Quantum Dot Intermediate Band Solar Cell (QD-IBSC) has been proposed for studying experimentally the operating principles of a generic class of photovoltaic devices, the intermediate band solar cells (IBSC). The performance of an IBSC is based on the properties of a semiconductor-like material which is characterised by the existence of an intermediate band (IB) located within what would otherwise be its conventional bandgap. The improvement in efficiency of the cell arises from its potential (i) to absorb below bandgap energy photons and thus produce additional photocurrent, and (ii) to inject this enhanced photocurrent without degrading its output photo-voltage. The implementation of the IBSC using quantum dots (QDs) takes advantage of the discrete nature of the carrier density of states in a 0-dimensional nano-structure, an essential property for realising the IB concept. In the QD-IBSC, the IB arises from the confined electron states in an array of quantum dots. This paper reviews the operation of the first prototype QD-IBSCs and discusses some of the lessons learnt from their characterisation
Refractory Coated/Lined Low Density Structures Project
National Aeronautics and Space Administration — The innovation in this proposed effort is the development of refractory coated or lined low density structures. Lightweight structures are desirable for space...
Measurements of band gap structure in diamond compressed to 370 GPa
Gamboa, Eliseo; Fletcher, Luke; Lee, Hae-Ja; Zastrau, Ulf; Gauthier, Maxence; Gericke, Dirk; Vorberger, Jan; Granados, Eduardo; Heimann, Phillip; Hastings, Jerome; Glenzer, Siegfried
2015-06-01
We present the first measurements of the electronic structure of dynamically compressed diamond demonstrating a widening of the band gap to pressures of up to 370 +/- 25 GPa. The 8 keV free electron laser x-ray beam from the Linac Coherently Light Source (LCLS) has been focussed onto a diamond foil compressed by two counter-propagating laser pulses to densities of up to 5.3 g/cm3 and temperatures of up to 3000 +/- 400 K. The x-ray pulse excites a collective interband transition of the valence electrons, leading to a plasmon-like loss. We find good agreement with the observed plasmon shift by including the pressure dependence of the band gap as determined from density functional theory simulations. This work was performed at the Matter at Extreme Conditions (MEC) instrument of LCLS, supported by the DOE Office of Science, Fusion Energy Science under Contract No. SF00515. This work was supported by DOE Office of Science, Fusion Energy Science under F.
Population and Employment Densities: Structure and Change
Small, Kenneth A.; Song, Shunfeng
1994-01-01
We examine spatial patterns and their changes during the 1970s for the Los Angeles region, by estimating monocentric and polycentric density functions for employment and population. Downtown Los Angeles is clearly identified as the statistical monocentric center of the region, and it is the most consistently strong center in the polycentric patterns. Polycentric models fit statistically better than monocentric models, and there was some shift in employment distribution toward a more polycentr...
Evolution of band structures in MoS2-based homo- and heterobilayers
Density functional theory calculations have been performed to elucidate the detailed evolution of band structures in MoS2-based homo- and heterobilayers. By constructing the energy-band alignments we observed that biaxial tensile and compressive strain in the constituent transition-metal dichalcogenide (TMD) monolayer shifts the states at the K C, Q C, and K V points down and up, respectively, while the states at the ΓV point are almost unaltered. In contrast, interlayer coupling tends to modify the states at the ΓV and Q C points by splitting the band-edge states of two strained or unstrained constituent TMD monolayers, while it does not affect the states at the K C and K V points. Considering the combined actions of strain and interlayer coupling, the relevant electronic parameters, especially the detailed evolution processes, of the band structures of the investigated bilayer systems can be clearly described. When further applying the extra biaxial strain to the three bilayer systems, it is found that energy differences ΔE(K C − Q C) and ΔE(K V − ΓV) decrease linearly as the increasing of the biaxial strain. According to the varying trends of ΔE(K C − Q C) and ΔE(K V − ΓV), MoS2 bilayer will maintain the indirect-bandgap character under any compressive or tensile strain. Differently, WS2/MoS2 heterobilayer transforms interestingly to the direct-bandgap material under the strain from −1.6% to −1.2% with the valence band maximum and conduction band minimum located at the K C and K V point respectively. The direct-to-indirect bandgap transition can be obtained for the WSe2/MoS2 heterobilayer when applying much larger extra tensile or compressive strain. The results offer an effective route to verify and tailor the electronic properties of TMD homo- and heterostructures and can be helpful in evaluating the performance of TMD-based electronic devices. (paper)
Evolution of band structures in MoS2-based homo- and heterobilayers
Zhu, H. L.; Zhou, C. J.; Huang, X. J.; Wang, X. L.; Xu, H. Z.; Lin, Yong; Yang, W. H.; Wu, Y. P.; Lin, W.; Guo, F.
2016-02-01
Density functional theory calculations have been performed to elucidate the detailed evolution of band structures in MoS2-based homo- and heterobilayers. By constructing the energy-band alignments we observed that biaxial tensile and compressive strain in the constituent transition-metal dichalcogenide (TMD) monolayer shifts the states at the K C, Q C, and K V points down and up, respectively, while the states at the ΓV point are almost unaltered. In contrast, interlayer coupling tends to modify the states at the ΓV and Q C points by splitting the band-edge states of two strained or unstrained constituent TMD monolayers, while it does not affect the states at the K C and K V points. Considering the combined actions of strain and interlayer coupling, the relevant electronic parameters, especially the detailed evolution processes, of the band structures of the investigated bilayer systems can be clearly described. When further applying the extra biaxial strain to the three bilayer systems, it is found that energy differences ΔE(K C - Q C) and ΔE(K V - ΓV) decrease linearly as the increasing of the biaxial strain. According to the varying trends of ΔE(K C - Q C) and ΔE(K V - ΓV), MoS2 bilayer will maintain the indirect-bandgap character under any compressive or tensile strain. Differently, WS2/MoS2 heterobilayer transforms interestingly to the direct-bandgap material under the strain from -1.6% to -1.2% with the valence band maximum and conduction band minimum located at the K C and K V point respectively. The direct-to-indirect bandgap transition can be obtained for the WSe2/MoS2 heterobilayer when applying much larger extra tensile or compressive strain. The results offer an effective route to verify and tailor the electronic properties of TMD homo- and heterostructures and can be helpful in evaluating the performance of TMD-based electronic devices.
Band-structure calculations and structure-factor estimates of Cu - their complementarity
Rather than an uncritical comparison of experimental and theoretical values, the various sets of structure-factor values of copper metal derived from experimental diffraction procedures are mutally compared as also are the various sets of theoretical values derived from band-structure calculations. This approach reveals the presence of outlier sets in each group and allows recognition of their condition before any attempt is made to intercompare the groups. Within the experimental group, the γ-ray values do not appear to sustain the absolute status originally claimed from them. Within the theoretical group, an inadequacy in defining the core contribution is indicated. The latter conclusion suggests that it is an inappropriate operation to make direct comparison between diffraction-sourced experimental values of structure factors and theoretical values from band-structure calculations. Instead, the latter should be used on a complementary basis with the full (sin θ)/λ range of experimental values to establish the best core contribution. The minor valence-bond contribution to scattering, which is largely restricted to the low (sin θ)/λ region, is most sensitively defined by reference to band-structure prediction of photoemission spectral distribution. Attention is drawn to the possible significance of the form-factor curve versus (sin θ)/λ being dependent on the unit-cell dimension. (orig.)
The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly “simple” MOF, the excitation spectra cannot be explained by a superposition of “intra-unit” excitations within the individual building blocks. Instead, “inter-unit” excitations also have to be considered
Gu, Zhi-Gang; Heinke, Lars; Wöll, Christof; Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin; Gordan, Ovidiu D.; Zahn, Dietrich R. T.
2015-11-01
The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly "simple" MOF, the excitation spectra cannot be explained by a superposition of "intra-unit" excitations within the individual building blocks. Instead, "inter-unit" excitations also have to be considered.
Gu, Zhi-Gang [Institut für Funktionelle Grenzflächen (IFG), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou (China); Heinke, Lars, E-mail: Lars.Heinke@KIT.edu; Wöll, Christof [Institut für Funktionelle Grenzflächen (IFG), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Neumann, Tobias; Wenzel, Wolfgang; Li, Qiang; Fink, Karin [Institute of Nanotechnology (INT), Karlsruher Institut für Technologie (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Gordan, Ovidiu D.; Zahn, Dietrich R. T. [Semiconductor Physics, Technische Universität Chemnitz, 09107 Chemnitz (Germany)
2015-11-02
The electronic properties of metal-organic frameworks (MOFs) are increasingly attracting the attention due to potential applications in sensor techniques and (micro-) electronic engineering, for instance, as low-k-dielectric in semiconductor technology. Here, the band gap and the band structure of MOFs of type HKUST-1 are studied in detail by means of spectroscopic ellipsometry applied to thin surface-mounted MOF films and by means of quantum chemical calculations. The analysis of the density of states, the band structure, and the excitation spectrum reveal the importance of the empty Cu-3d orbitals for the electronic properties of HKUST-1. This study shows that, in contrast to common belief, even in the case of this fairly “simple” MOF, the excitation spectra cannot be explained by a superposition of “intra-unit” excitations within the individual building blocks. Instead, “inter-unit” excitations also have to be considered.
Band structure of sup 7 sup 9 Br
Ray, I; Bhattacharya, S; Saha-Sarkar, M; Sethi, B; Chatterjee, J M; Chattopadhyay, S; Goswami, A; Muralithar, S; Singh, R P; Bhowmik, R K
1999-01-01
High-spin states of sup 7 sup 9 Br have been studied in the reaction sup 7 sup 6 Ge( sup 7 Li, 4n gamma) at 32 MeV. A gamma-detector array with twelve Compton-suppressed HPGe detectors was used. The positive-parity yrast states, interpreted as a rotationally aligned g sub ( sub 9 sub ( sub 2 sub ) sub ) proton band, and the negative-parity ground state band have been extended to spins of (33(2 sup +)) and (25(2 sup -)), respectively. Lifetime measurements indicate that both bands have a similar quadrupole deformation of beta sub 2 approx 0.2. The positive-parity alpha = -(1(2)) band has been identified. Several new inter-band transitions are observed. A cranked-shell model analysis shows that the nu g sub ( sub 9 sub ( sub 2 sub ) sub ) and pi g sub ( sub 9 sub ( sub 2 sub ) sub ) alignments occur in the positive-parity and the negative-parity bands at rotational frequencies of Planck constant omega approx 0.6 and 0.4 MeV, respectively. The level energies and the electromagnetic properties of the g sub ( sub ...
Density-functional based tight-binding modelling of ZnO structures
Fisker, Christian; Pedersen, Thomas G. [Department of Physics and Nanotechnology, Aalborg University (Denmark)
2009-02-15
A self-consistent charge density-functional based tight-binding (SCC-DFTB) parametrisation for structural optimization and electronic properties of zinc oxide is presented. Repulsive potentials are obtained from the ZnO wurtzite geometry and a thin nanowire and applied to the bulk rock salt phase, a (0001) oriented slab and nanowires of different sizes. The parametrisation is shown to reproduce geometries in agreement with DFT calculations. A different set of parameters is generated for electronic calculations giving band structures with a bulk band gap of 3.3 eV and a strong split-off of the d-bands in agreement with experiments. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Nguyen, Chuong V.; Hieu, Nguyen N.; Nguyen, Duong T.
2015-01-01
Strain-dependent structural and electronic properties of MoS2 materials are investigated using first principles calculations. The structural and electronic band structures of the MoS2 with relaxed unit cells are optimized and calculated by the dispersion-corrected density functional theory (DFT-D2). Calculations within the local density approximation (LDA) and GGA using PAW potentials were also performed for specific cases for the purpose of comparison. The effect of strain on the band gap an...
New linear accelerator (Linac) design based on C-band accelerating structures for SXFEL facility
ZHANG Meng; GU Qiang
2011-01-01
A C-band accelerator structure is one promising technique for a compact XFEL facility.It is also attractive in beam dynamics in maintaining a high quality electron beam,which is an important factor in the performance of a free electron laser.In this paper,a comparison between traditional S-band and C-band accelerating structures is made based on the linac configuration of a Shanghai Soft X-ray Free Electron Laser (SXFEL) facility.Throughout the comprehensive simulation,we conclude that the C-band structure is much more competitive.
Band structure and optical properties of highly anisotropic LiBa2[B10O16(OH)3] decaborate crystal
The band structure (BS), charge density distribution and linear-optical properties of the anisotropic crystal LiBa2[B10O16(OH)3] (LBBOH) are calculated using a self-consistent norm-conserving pseudopotential method within the framework of the local-density approximation theory. A high anisotropy of the band energy gap (4.22 eV for the E parallel b, 4.46 eV for the E parallel c) and giant birefringence (up to 0.20) are found. Comparison of the theoretically calculated and the experimentally measured polarised spectra of the imaginary part of the dielectric susceptibility ε2 shows a good agreement. The anisotropy of the charge density distribution, BS dispersion and of the optical spectra originate from anisotropy between the 2pzB-2pzO and 2py,xB-2py,yO bonding orbitals. The observed anisotropy in the LBBOH is principally different from that of β-BaB2O4 (BBO) single crystals. In the LBBOH single crystals the anisotropy of optical and charge density distribution is caused by different projection of the orbitals originating from particular borate clusters on the particular crystallographic axes, contrary to the BBO, where the anisotropy is caused prevailingly by a different local site symmetry of oxygen within the borate planes. The observed anisotropy is analysed in terms of the band energy dispersion and space charge density distribution
Relationships between magnetic foot points and G-band bright structures
Ishikawa, R.; Tsuneta, S.; Kitakoshi, Y.; Katsukawa, Y.; Bonet, J. A.; Domínguez, S. Vargas; van der Voort, L. H. M. Rouppe; Sakamoto, Y; Ebisuzaki, T.
2008-01-01
Magnetic elements are thought to be described by flux tube models, and are well reproduced by MHD simulations. However, these simulations are only partially constrained by observations. We observationally investigate the relationship between G-band bright points and magnetic structures to clarify conditions, which make magnetic structures bright in G-band. The G-band filtergrams together with magnetograms and dopplergrams were taken for a plage region covered by abnormal granules as well as u...
The Density-Functional method, with Linear Combination of Atomic Orbitals, has been applied to eight crystals; the lattice equilibrium parameters, and the lattice formation energies have been calculated at the Hartree-Fock level (HF), at the hybrid Hartree-Fock Density-Functional level (DFT/HF), and at the Kohn-Sham Density-Functional level (DFT). The band structures and the electronic charge distributions calculated at the DFT and HF levels are compared
Design and analysis of defected ground structure transformer for dual-band antenna
Wai-Wa Choi
2014-12-01
Full Text Available This study presents a novel dual-band antenna design methodology utilising a dual-frequency impedance transformer with defected ground structure (DGS. The proposed dual-frequency DGS impedance transformer generates a second resonant frequency from a conventional single-band antenna, resulting dual-band operation. Simulation studies illustrate that the adopted design achieves versatile configurations for arbitrary operating frequencies and diverse input impedance ranges in planar antenna structures. To experimentally verify the proposed design methodology, a dual-frequency DGS impedance transformer was implemented for a 2.4 GHz monopole antenna to obtain a 900/2400 MHz dual-band antenna. Measurement shows that the 10 dB return loss bandwidth in 900 MHz band is 34.4 MHz, whereas that in 2400 MHz band is wider than 530 MHz. Typical monopole radiation patterns are observed at both operating bands.
Band structures in silicene on monolayer gallium phosphide substrate
Ren, Miaojuan; Li, Mingming; Zhang, Changwen; Yuan, Min; Li, Ping; Li, Feng; Ji, Weixiao; Chen, Xinlian
2016-07-01
Opening a sizable band gap in the zero-gap silicene is a key issue for its application in nanoelectronics. We design new 2D silicene and GaP heterobilayer (Si/GaP HBL) composed of silicene and monolayer (ML) GaP. Based on first-principles calculations, we find that the interaction energies are in the range of -295.5 to -297.5 meV per unit cell, indicating a weak interaction between silicene and gallium phosphide (GaP) monolayer. The band gap changes ranging from 0.06 to 0.44 eV in hybrid HBLs. An unexpected indirect-direct band gap crossover is also observed in HBLs, dependent on the stacking pattern. These provide a possible way to design effective FETs out of silicene on GaP monolayer.
New bismuth borophosphate Bi4BPO10 was obtained by spontaneous crystallization from the melt of correspondent composition at 804 °C. Crystal structure with orthorhombic lattice parameters: a = 22.5731(3) Å, b = 14.0523(2) Å, c = 5.5149(1) Å, V = 1749.34(4), Z = 8, SG Pcab was determined by X-ray powder diffraction technique. The [Bi2O2]2+ -layers, which are typical for bismuth oxide compounds, transform into cationic endless strips of 4 bismuth atoms width directed along the c-axis in Bi4BPO10. The strips combining stacks are separated by flat triangle [BO3]3− -anions within stacks. Neighboring stacks are separated by tetrahedral [PO4]3−-anions and shifted relatively to each other. Bismuth atoms are placed in 5–7 vertex oxygen irregular polyhedra. Bi4BPO10 is stable up to 812 °C, then melts according to the peritectic law. The absorption spectrum in the range 350–700 nm was obtained and the width of the forbidden band was estimated as 3.46 eV. The band electronic structure of Bi4BPO10 was modeled using DFT approach. The calculated band gap (3.56 eV) is in good agreement with the experimentally obtained data. - Graphical abstract: Display Omitted - Highlights: • New bismuth borophosphate with composition Bi4BPO10 was synthesized. • The crystal structure was determined by X-ray powder diffraction technique. • Bismuth-oxygen part [Bi4O3]6+ forms endless strips of 4 bismuth atoms width. • Electronic structure was modeled by DFT method. • The calculated band gap (3.56 eV) is very close to the experimental one (3.46 eV)
The Density Functional Theory Study of Structural and Electronical Properties of ZnO Clusters
O.V. Bovgyra
2013-03-01
Full Text Available Density functional theory studies of structural and electronic properties of small clusters were performed. For each cluster an optimization of structure and the basic properties of the band structure were conducted. It was determined that with increasing (n energetically more efficient in the small clusters is stabilization from the ring to fulleren-like structures containing tetragonal and hexagonal faces and all atoms have coordination number equal three. Among the clusters (ZnO12 with doped atoms most stable are clusters where Zn was replaced by Mn, Cu and Co atoms. Band gap in the electronic spectrum of doped clusters decreases due to p-d hybridization orbitals of the impurity atom with the orbitals of the oxygen atom.
Photonic band structures in one-dimensional photonic crystals containing Dirac materials
We have investigated the band structures of one-dimensional photonic crystals (1DPCs) composed of Dirac materials and ordinary dielectric media. It is found that there exist an omnidirectional passing band and a kind of special band, which result from the interaction of the evanescent and propagating waves. Due to the interface effect and strong dispersion, the electromagnetic fields inside the special bands are strongly enhanced. It is also shown that the properties of these bands are invariant upon the lattice constant but sensitive to the resonant conditions
Polfus, Jonathan M; Bjørheim, Tor S; Norby, Truls; Haugsrud, Reidar
2012-09-01
The nitrogen related defect chemistry and electronic structure of wide band gap oxides are investigated by density functional theory defect calculations of N(O)(q), NH(O)(×), and (NH2)(O)(·) as well as V(O)(··) and OH(O)(·) in MgO, CaO, SrO, Al(2)O(3), In(2)O(3), Sc(2)O(3), Y(2)O(3), La(2)O(3), TiO(2), SnO(2), ZrO(2), BaZrO(3), and SrZrO(3). The N(O)(q) acceptor level is found to be deep and the binding energy of NH(O)(×) with respect to N(O)' and (OH(O)(·) is found to be significantly negative, i.e. binding, in all of the investigated oxides. The defect structure of the oxides was found to be remarkably similar under reducing and nitriding conditions (1 bar N(2), 1 bar H(2) and 1 × 10(-7) bar H(2)O): NH(O)(×) predominates at low temperatures and [N(O)'] = 2[V(O)(··) predominates at higher temperatures (>900 K for most of the oxides). Furthermore, we evaluate how the defect structure is affected by non-equilibrium conditions such as doping and quenching. In terms of electronic structure, N(O)' is found to introduce isolated N-2p states within the band gap, while the N-2p states of NH(O)(×) are shifted towards, or overlap with the VBM. Finally, we assess the effect of nitrogen incorporation on the proton conducting properties of oxides and comment on their corrosion resistance in nitriding atmospheres in light of the calculated defect structures. PMID:22828729
Band structure engineering of graphene by a local gate defined periodic potential
Forsythe, Carlos; Maher, Patrick; Scarabelli, Diego; Dean, Cory; Kim, Philip
Recent improvements in 2-dimensional (2D) material layering have resulted in enhanced device quality and created pathways for new device architectures. We fabricate periodic arrays from a patterned local back gate and a uniform top gate on hBN encapsulated graphene channels. The symmetry and lattice size of the periodic potential can be determined by state-of-art electron beam lithography and etching, achieving a lattice constant of 35 nm. The strength of the electric potential modulation can be controlled through applied voltage on the patterned gate. We observe signatures of superlattice modulation near the main Dirac peak in the density dependent resistance measurement at zero magnetic field. Current studies focus on the exploration of Hofstadter fractal band structures under magnetic fields. Our nano-patterned engineered superlattices on graphene hold great promise for wider applications.
We report a systematic first principles density functional study on the electronic structure, elastic and optical properties of nitrogen based solid hydrogen storage materials LiNH2, NaNH2, KNH2, and RbNH2. The ground state structural properties are calculated by using standard density functional theory, and also dispersion corrected density functional theory. We find that van der Waals interactions are dominant in LiNH2 whereas they are relatively weak in other alkali metal amides. The calculated elastic constants show that all the compounds are mechanically stable and LiNH2 is found to be a stiffer material among the alkali metal amides. The melting temperatures are calculated and follow the order RbNH2 2 2 2. The electronic band structure is calculated by using the Tran–Blaha modified Becke–Johnson potential and found that all the compounds are insulators, with a considerable band gap. The [NH2]− derived states completely dominate in the entire valence band region while the metal atom states occupy the conduction band. The calculated band structure is used to analyze the different interband optical transitions occurring between valence and conduction bands. Our calculations show that these materials have considerable optical anisotropy. (paper)
Vibrational dynamics and band structure of methyl-terminated Ge(111)
Hund, Zachary M.; Nihill, Kevin J.; Sibener, S. J., E-mail: s-sibener@uchicago.edu [The James Franck Institute and Department of Chemistry, The University of Chicago, 929 E. 57" t" h Street, Chicago, Illinois 60637 (United States); Campi, Davide; Bernasconi, M. [Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy); Wong, Keith T.; Lewis, Nathan S. [Division of Chemistry and Chemical Engineering, Beckman Institute and Kavli Nanoscience Institute, California Institute of Technology, 210 Noyes Laboratory, 127-72, Pasadena, California 91125 (United States); Benedek, G. [Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy); Donostia International Physics Center (DIPC), Universidad del País Vasco (EHU), 20018 Donostia/San Sebastian (Spain)
2015-09-28
A combined synthesis, experiment, and theory approach, using elastic and inelastic helium atom scattering along with ab initio density functional perturbation theory, has been used to investigate the vibrational dynamics and band structure of a recently synthesized organic-functionalized semiconductor interface. Specifically, the thermal properties and lattice dynamics of the underlying Ge(111) semiconductor crystal in the presence of a commensurate (1 × 1) methyl adlayer were defined for atomically flat methylated Ge(111) surfaces. The mean-square atomic displacements were evaluated by analysis of the thermal attenuation of the elastic He diffraction intensities using the Debye-Waller model, revealing an interface with hybrid characteristics. The methyl adlayer vibrational modes are coupled with the Ge(111) substrate, resulting in significantly softer in-plane motion relative to rigid motion in the surface normal. Inelastic helium time-of-flight measurements revealed the excitations of the Rayleigh wave across the surface Brillouin zone, and such measurements were in agreement with the dispersion curves that were produced using density functional perturbation theory. The dispersion relations for H-Ge(111) indicated that a deviation in energy and lineshape for the Rayleigh wave was present along the nearest-neighbor direction. The effects of mass loading, as determined by calculations for CD{sub 3}-Ge(111), as well as by force constants, were less significant than the hybridization between the Rayleigh wave and methyl adlayer librations. The presence of mutually similar hybridization effects for CH{sub 3}-Ge(111) and CH{sub 3}-Si(111) surfaces extends the understanding of the relationship between the vibrational dynamics and the band structure of various semiconductor surfaces that have been functionalized with organic overlayers.
Vibrational dynamics and band structure of methyl-terminated Ge(111)
A combined synthesis, experiment, and theory approach, using elastic and inelastic helium atom scattering along with ab initio density functional perturbation theory, has been used to investigate the vibrational dynamics and band structure of a recently synthesized organic-functionalized semiconductor interface. Specifically, the thermal properties and lattice dynamics of the underlying Ge(111) semiconductor crystal in the presence of a commensurate (1 × 1) methyl adlayer were defined for atomically flat methylated Ge(111) surfaces. The mean-square atomic displacements were evaluated by analysis of the thermal attenuation of the elastic He diffraction intensities using the Debye-Waller model, revealing an interface with hybrid characteristics. The methyl adlayer vibrational modes are coupled with the Ge(111) substrate, resulting in significantly softer in-plane motion relative to rigid motion in the surface normal. Inelastic helium time-of-flight measurements revealed the excitations of the Rayleigh wave across the surface Brillouin zone, and such measurements were in agreement with the dispersion curves that were produced using density functional perturbation theory. The dispersion relations for H-Ge(111) indicated that a deviation in energy and lineshape for the Rayleigh wave was present along the nearest-neighbor direction. The effects of mass loading, as determined by calculations for CD3-Ge(111), as well as by force constants, were less significant than the hybridization between the Rayleigh wave and methyl adlayer librations. The presence of mutually similar hybridization effects for CH3-Ge(111) and CH3-Si(111) surfaces extends the understanding of the relationship between the vibrational dynamics and the band structure of various semiconductor surfaces that have been functionalized with organic overlayers
Phononic band gaps and vibrations in one- and two-dimensional mass-spring structures
Jensen, Jakob Søndergaard
2003-01-01
The vibrational response of finite periodic lattice structures subjected to periodic loading is investigated. Special attention is devoted to the response in frequency ranges with gaps in the band structure for the corresponding infinite periodic lattice. The effects of boundaries, viscous damping......, and imperfections are studied by analyzing two examples; a 1-D filter and a 2-D wave guide. In 1-D the structural response in the band gap is shown to be insensitive to damping and small imperfections. In 2-D the similar effect of damping is noted for one type of periodic structure, whereas for...... another type the band gap effect is nearly eliminated by damping. In both 1-D and 2-D it is demonstrated how the free structural boundaries affect the response in the band gap due to local resonances. Finally, 2-D wave guides are considered by replacing the periodic structure with a homogeneous structure...
Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies
Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar
2016-05-01
The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.
Band gap engineering and \\vec{k}\\cdot \\vec{\\pi } electronic structure of lead and tin tellurides
Behera, S. S.; Tripathi, G. S.
2016-06-01
We study the effect of the variation of energy gap on the k\\cdot π electronic structure of PbTe and SnTe, using a six-level basis at the L point. The basis functions in both the systems have the same transformation properties. However, the basis functions of the band edge states in SnTe are reversed with respect to the same in PbTe. Band dispersions are obtained analytically for a two band model. As the band gap decreases, the bands become linear. Far bands are included in the electronic dispersion, using perturbation theory. Fermi energy and the Density of States at the Fermi energy, { D }({\\varepsilon }F), are calculated for different carrier concentrations and energy gaps through a self-consistent approach. Interesting results are seen when the energy gap is reduced from the respective equilibrium values. For both the systems, the Fermi energy increases as the gap is decreased. The behavior of { D }({\\varepsilon }F) is, however, different. It decreases with the gap. It is also on expected lines. Calculated values of the electronic effective mass, as a function of temperature, energy gap and carrier concentration, are compared with previously published data. As distinguished from a first principles calculation, the work has focused on the carrier dependent electronic parameters for use both by theorists and experimenters as well.
Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies
Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar
2016-07-01
The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.
Recent Results from Broad-Band Intensity Mapping Measurements of Cosmic Large Scale Structure
Zemcov, Michael B.; CIBER, Herschel-SPIRE
2016-01-01
Intensity mapping integrates the total emission in a given spectral band over the universe's history. Tomographic measurements of cosmic structure can be performed using specific line tracers observed in narrow bands, but a wealth of information is also available from broad-band observations performed by instruments capable of capturing high-fidelity, wide-angle images of extragalactic emission. Sensitive to the continuum emission from faint and diffuse sources, these broad-band measurements provide a view on cosmic structure traced by components not readily detected in point source surveys. After accounting for measurement effects and astrophysical foregrounds, the angular power spectra of such data can be compared to predictions from models to yield powerful insights into the history of cosmic structure formation. This talk will highlight some recent measurements of large scale structure performed using broad-band intensity mapping methods that have given new insights on faint, distant, and diffuse components in the extragalactic background light.
Cuong, Do Duc; Park, Jinsik; Rhim, S. H.; Hong, Soon Cheol
2016-01-01
The strain effect on electronic structure and thermoelectric properties of Higher Manganese Silicides (HMSs) Mn4Si7 was studied using Density Functional Theory (DFT) and through solving Boltzman Transport Equation (BTE). We found that the tensile strain attempts to reduce the band gap while the compressive strain not much affect to band gap. The Seebeck coeficient was found to be increased with increasing temperature, which is very consistent to experiments. The electrical conductivity and po...
Novel structure for magnetic rotation bands in 60Ni
Zhao, P. W.; Zhang, S.Q.; Peng, J.; H.Z. Liang; Ring, P.; Meng, J
2011-01-01
The self-consistent tilted axis cranking relativistic mean-field theory based on a point-coupling interaction has been established and applied to investigate systematically the newly observed shears bands in 60Ni. The tilted angles, deformation parameters, energy spectra, and reduced M1 and $E2$ transition probabilities have been studied in a fully microscopic and self-consistent way for various configurations and rotational frequencies. It is found the competition between the configurations ...
Band structures in 98Ru and 99Ru
The level schemes of 98sup(,)99Ru were studied with the reactions 8Mo(α,3nγ) and 98Mo(α,4nγ) at Esub(α) = 35 to 55 MeV, using a large variety of in-beam γ-ray detection techniques and conversion-electron measurements. A search for the 3- state was carried out with the reaction 98Ru(p,p'). The ground-state band of 98Ru was excited up to Jsup(π) = (12)+ and a negative-parity band up to (15)-. New levels in 98Ru were found at Esub(x) = 2285 (Jsup(π) = 4+), 2435 (Jsup(π) = (3-,4+), 2671, 3540, 4224, 4847, 4915 (Jsup(π) = (12)sup()), 4989 (Jsup(π) = (12sup())), 5521 (Jsup(π) = (13)-), 5889, 6591 (Jsup(π) = (15)-), and 7621 keV. New unambiguous spin and parity assignments were made for the levels at Esub(x) = 2014 and 3852 keV, as Jsup(π) = 3+ and 9-, respectivley. New levels in 99Ru were found at Esub(x) = 1976, 2021 (Jsup(π) = (15/2+)), 2393, 2401 (Jsup(π) = (17/2+)), 2875 (π = (+)), 3037, 3201 (Jsup(π) = (23/2)-), 3460 (J = (17/2)), 3484 (Jsup(π) = (21/2+)), 3985, 4224 (Jsup(π) = (27/2-)), and 5359 keV. The 1070 keV, Jsup(π) = 11/2- level in 99Ru has a half-life of 2.8 ns. A strongly excited negative-parity band is built on this level. A positive-parity band based on the ground state was excited up to Jsup(π) = (21/2+). The level schemes are well reproduced by the interacting boson model in the vibrational limit. (orig.)
Wang, Dong, E-mail: wang.dong.539@m.kyushu-u.ac.jp; Maekura, Takayuki; Kamezawa, Sho [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Yamamoto, Keisuke; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)
2015-02-16
We demonstrated direct band gap (DBG) electroluminescence (EL) at room temperature from n-type bulk germanium (Ge) using a fin type asymmetric lateral metal/Ge/metal structure with TiN/Ge and HfGe/Ge contacts, which was fabricated using a low temperature (<400 °C) process. Small electron and hole barrier heights were obtained for TiN/Ge and HfGe/Ge contacts, respectively. DBG EL spectrum peaked at 1.55 μm was clearly observed even at a small current density of 2.2 μA/μm. Superlinear increase in EL intensity was also observed with increasing current density, due to superlinear increase in population of elections in direct conduction band. The efficiency of hole injection was also clarified.
Pradhan, B. [Department of Physics, Govt. Science College, Malkangiri 764 048 (India); Mohanta, K.L. [Department of Physics, ITER, Siksha ' O' Anusandhan University, Bhubaneswar 751 030 (India); Rout, G.C., E-mail: gcr@iopb.res.in [Condensed Matter Physics Group, Dept. of Applied Physics and Ballistics, F.M. University, Balasore 756 019 (India)
2012-05-15
We report here a mean-field study of competing antiferromagnetism, superconductivity and lattice strain phases and their effect on the local density of states of the cuprate system. Our model Hamiltonian incorporating these interactions is reported earlier [G.C. Rout et al., Physica C, 2007]. The analytic expression for superconducting, antiferromagnetism and lattice strain order parameters are calculated and solved self-consistently. The interplay of these order parameters is investigated considering the calculated density of states (DOSs) of the conduction electrons. The DOS displays multiple gap structures with multiple peaks. It is suggested that the tunneling conductance data obtained from the scanning tunneling microscopy (STM) measurements could be interpreted by using the quasi-particle bands calculated from our model Hamiltonian. We have discussed the mechanism to calculate the order parameters from the conductance data.
Physical properties and electronic band structure of noncentrosymmetric Th7Co3 superconductor.
Sahakyan, M; Tran, V H
2016-05-25
The physical properties of the noncentrosymmetric superconductor Th7Co3 have been investigated by means of ac-magnetic susceptibility, magnetization, specific heat, electrical resistivity, magnetoresistance and Hall effect measurements. From these data it is established that Th7Co3 is a dirty type-II superconductor with [Formula: see text] K, [Formula: see text] and moderate electron-phonon coupling [Formula: see text]. Some evidences for anisotropic superconducting gap are found, including e.g. reduced specific heat jump ([Formula: see text]) at T c, diminished superconducting energy gap ([Formula: see text]) as compared to the BCS values, power law field dependence of the Sommerfeld coefficient at 0.4 K ([Formula: see text]), and a concave curvature of the [Formula: see text] line. The magnitudes of the thermodynamic critical field and the energy gap are consistent with mean-squared anisotropy parameter [Formula: see text]. The electronic specific heat in the superconducting state is reasonably fitted to an oblate spheroidal gap model. Calculations of scalar relativistic and fully relativistic electronic band structures reveal considerable differences in the degenerate structure, resulting from asymmetric spin-orbit coupling (ASOC). A large splitting energy of spin-up spin-down bands at the Fermi level E F, [Formula: see text] meV is observed and a sizeable ratio [Formula: see text] could classify the studied compound into the class of noncentrosymmetric superconductors with strong ASOC. The noncentrosymmetry of the crystal structure and the atomic relativistic effects are both responsible for an importance of ASOC in Th7Co3. The calculated results for the density of states show a Van Hove singularity just below E F and dominant role of the 6d electrons of Th to the superconductivity. PMID:27120582
Physical properties and electronic band structure of noncentrosymmetric Th7Co3 superconductor
Sahakyan, M.; Tran, V. H.
2016-05-01
The physical properties of the noncentrosymmetric superconductor Th7Co3 have been investigated by means of ac-magnetic susceptibility, magnetization, specific heat, electrical resistivity, magnetoresistance and Hall effect measurements. From these data it is established that Th7Co3 is a dirty type-II superconductor with {{T}\\text{c}}=1.8+/- 0.02 K, Hc2\\text{orb}energy gap ({{Δ }0}/{{k}\\text{B}}{{T}\\text{c}}=2.17 ) as compared to the BCS values, power law field dependence of the Sommerfeld coefficient at 0.4 K ({{C}p}/T\\propto {{H}0.6} ), and a concave curvature of the {{H}c2}≤ft({{T}\\text{c}}\\right) line. The magnitudes of the thermodynamic critical field and the energy gap are consistent with mean-squared anisotropy parameter ∼ 0.23 . The electronic specific heat in the superconducting state is reasonably fitted to an oblate spheroidal gap model. Calculations of scalar relativistic and fully relativistic electronic band structures reveal considerable differences in the degenerate structure, resulting from asymmetric spin–orbit coupling (ASOC). A large splitting energy of spin-up spin-down bands at the Fermi level E F, Δ {{E}\\text{ASOC}}∼ 100 meV is observed and a sizeable ratio Δ {{E}\\text{ASOC}}/{{k}\\text{B}}{{T}\\text{c}}∼ 640 could classify the studied compound into the class of noncentrosymmetric superconductors with strong ASOC. The noncentrosymmetry of the crystal structure and the atomic relativistic effects are both responsible for an importance of ASOC in Th7Co3. The calculated results for the density of states show a Van Hove singularity just below E F and dominant role of the 6d electrons of Th to the superconductivity.
Obtaining the band structure of a complicated photonic crystal by linear operations
吴良; 叶卓; 何赛灵
2003-01-01
Absolute band gaps can be created by lifting the degeneracy in the bands of a photonic crystal.To calculate the band structure of a complicated photonic crystal generated by e.g.symmetry breaking,general forms of all possible linear operations are presented in terms of matrices and a procedure to combine these operations is given.Other forms of linear operations(such as the addition,subtraction,and translation transforms) are also presented to obtain an explicit expression for the Fourier coefficient of the dielectric function in the plane-wave expansion method.With the present method,band structures for various complicated photonic crystals(related through these linear operations) can be obtained easily and quickly.As a numerical example,a large absolute band gap for a complicated photonic crystal structure of GaAs is found in the high region of normalized frequency.