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Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

International Nuclear Information System (INIS)

The composite wave variational version of the APW (augmented plane wave) method is used to obtain the electronic band structure of the compounds boron phosphide and boron arsenide at the high symmetry points #GAMMA#, X, and L. The tight binding interpolation scheme of Slater and Koster is used to calculate the rest of the band structure. The results show that both these materials are indirect band gap semiconductors. The density of states, and the imaginary part of the dielectric constant is also calculated. The theoretical results are compared with the reported experimental and theoretical data. (author).

International Nuclear Information System (INIS)

We present a comprehensive, up-to-date compilation of band parameters for the technologically important III - V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale ...

Science.gov (United States)

By using a model dielectric matrix in electron self-energy evaluations the computational effort of a quasiparticle band-structure calculation for a semiconductor is greatly reduced. Applications to various systems with or without inversion symmetry, having narrow or wide band gaps, and semiconductor alloys demonstrate the reliability and accuracy of the method. Calculations have been performed for thirteen semiconducting or insulating materials: Si, LiCl, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, and the Al{sub 0.5}Ga{sub 0.5}As and In{sub 0.53}Ga{sub 0.47}As alloys. Excellent agreement with experimental results is obtained for the quasiparticle energies for these materials. The only three exceptions, {ital E}({Gamma}{sub 1{ital c}}) of AlP, {ital E}({ital L}{sub 1{ital c}}) of AlAs, and {ital E}({ital L}{sub 1{ital c}}) of AlSb are discussed and ...

International Nuclear Information System (INIS)

The effects of hydrostatic pressure on the electronic band structure of the semiconductor mineral iron pyrite FeS_2 have been investigated theoretically by an ab initio full-potential linearized-augmented plane wave (FPLAPW) method within a local approximation (LDA/GGA) to the density functional theory. The calculations predict that at a pressure of 94.1 GPa the indirect band gap of pyrite FeS_2 vanishes and the material becomes a metal. This is due to the presence of the S-S and Fe-S bonds, which provide novel energy band distortions in the process of attaining the metallic state. Analysis indicates that, under increasing high pressure, the conduction bands (3p_z of sulfur and 3d_x_"2_-_y_"2+3d_x_y of iron) intrude downwards into the valence bands, which are predominantly 3d in nature. At normal pressure, the lattice constant, the bulk ...

International Nuclear Information System (INIS)

The credibility of the model proposed by Ghosh in predicting the refractive indices of mixed semiconductor crystals of technological importance within their miscibility range as a function of band gap is demonstrated. The high-frequency refractive indices of four quaternary alloys Al_xGa_1_-_x_-_yIn_yP (y = 0.49, 0 #<=# x #<=# 0.51), InSb_xAs_1_-_x_-_yP_y (y = 2.2x, 0 #<=# x #<=# 0.313, 0 #<=# y #<=# 0.638), Cd_xZn_1_-_x_-_yHg_ySe (x + y = 1, 0.153 #<=# x #<=# 0.684, 0.316 #<=# y #<=# 0.847), and CdS_1_-_x_-_ySe_xTe_y (x + y = 1, 0.15 #<=# x #<=# 0.93, 0.07 #<=# y #<=# 0.85) are calculated according to the relation n"2-1 = A/(E_g + B)"2 where A is an energy gap dependent constant and B is a constant depending on crystal ionicity. The calculated values show excellent agreement with the experimental data thus justifying the validity of the model.

Energy Technology Data Exchange (ETDEWEB)

The near normal incidence reflectivity of the ferromagnets U/sub 3/P/sub 4/ and U/sub 3/As/sub 4/ and the isostructural but diamagnetic compounds Th/sub 3/P/sub 4/ and Th/sub 3/As/sub 4/ has been measured from 0.03 to 12 eV. Trithorium tetraphosphide and tetraarsenide are shown to be indirect gap semiconductors with gap energies of 0.43 and 0.39 eV, respectively. U/sub 3/P/sub 4/ and U/sub 3/As/sub 4/ display similar sets of p..-->..d transitions than the corresponding thorium compounds, however, they are shifted by 0.85 eV to lower photon energies. It is concluded that the uranium compounds are metals due to a merging of the valence p band into the 6d conduction band giving direct experimental evidence for a p-f mixing effect of the same size. Energy level schemes are derived.

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The influence of small amounts of alloying elements (0.36% Cu and 0.47% Cr) on the semiconducting properties of passive films formed on weathering steels was investigated either in tetraborate/boric acid buffer solution (pH 9.2) or artificial atmospheric environment (SO{sub 2}-containing environment). The electrochemical behaviour was assessed by potentiodynamic polarisation, capacitance measurements and photoelectrochemistry. The chemical characterisation of the films was carried by Auger electron spectroscopy. The polarization results obtained in the buffer solution show that the addition of chromium decreases the passive current density. The capacitance results show that the films behave as an n-type semiconductor with shallow and deep donor levels situated in the forbidden gap. The presence of copper seems to affect the density of the shallow and of the deep donor levels in the forbidden gap, and as chromium, it also ...

Science.gov (United States)

Nonparabolicity of the heavy hole band in diamond-like semiconductors, which occurs within the framework of the three band model with the perturbation from the other bands taken into account according to the Loewdin procedure, is studied. A direct dependence of nonparabolicity on the band anisotropy (caused by the different effect of Gamma/sub 15c/ and Gamma/sub 12c/ bands) and the inverse dependence on the magnitude of the spin-orbit splittiing is established. A connection between the effective mass of heavy holes and their energy is obtained, which is valid for the majority of diamond-like semiconductors, except for materials with a very strong nonparabolicity of the band of silicon type

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Perylene bisimides (PBIs) represent an important class of organic n-type semiconductors exhibiting a relatively high electron affinity among large-band-gap materials. Herein synthesis and characterization of several unsymmetrical N-substituted PBI dyes is presented and the thermotropic behavior, which is strongly affected by the respective N-substituents was investigated. Two different series of highly soluble and fluorescent derivatives have been synthesized: (1) PBIs bearing swallow-tailed alkyl chains, different in size or (2) one swallow-tailed alkyl chain and one branched oligoethylenglycolether. Synthesis of these PBIs is generally feasible by two distinct divergent synthesis approaches. Thermotropic behavior was studied by DSC, POM and XRD measurements. Inherent {pi}-{pi} interactions between cofacially orientated perylene molecules and the elliptic shape of the molecule favor the ordering in columns and self-organized architectures. ...

International Nuclear Information System (INIS)

The paper generalizes some results of the United States/Moldova program on advanced composite organic and semiconductor light emitters. High density exciton system bound to N impurity superlattice grown by modern technologies and GaP:N, GaP:N:Sm nanocrystals distributed in transparent fluorine-containing polymers will be used as the base elements for new generation of optoelectronic devices. The work seeks to expand further the applications of GaP itself through the formation of nanocomposites. Classic and new methods are applied for preparation of GaP:N nanoparticles with the controlled dimensions developed clear quantum confinement effect. The long-term ordered bulk GaP crystals as well as their nanoparticles have been investigated by TEM, XRD, Raman scattering, and luminescent methods. The evolution of the Raman Light Scattering and luminescence spectra is reported from pure and doped GaP single ...

International Nuclear Information System (INIS)

We present the results of a comprehensive study of the temperature dependences of the quantum efficiency for ultraviolet detectors based on GaAs, GaP and 4H--SiC Schottky structures, and on Si, GaAs p-n structures. For ultraviolet detectors based on Schottky structures, the quantum efficiency increases with increasing temperature for all photon energies, even including the semiconductor intrinsic absorption region. On the other hand, for ultraviolet detectors based on p-n structures, the quantum efficiency is practically temperature independent in the semiconductor intrinsic absorption region. The change in the quantum efficiency for the GaAs and Si detectors is less than 0.01% per degree. To explain the measurements, a variable trap occupancy model is presented. Subsurface imperfections of the semiconductor cause fluctuations in the profile of the conduction band and the valence ...

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A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction cell has been designed and experimentally demonstrated. By computer simulations we show how bending the grading of the band gap in the i-layer contributes to the enhancement of the carrier collection, improving the fill factor and efficiency. The differences observed between experiments and simulations are studied using Rutherford Backscattering Spectrometry (RBS). The results highlight weak points during the deposition process, whose control enables us to bring together experimental and computational results.

British Library Electronic Table of Contents (United Kingdom)

The pentenary compound semiconductor Cu(In,Ga)(Se,S)2 is one of the most attractive materials for high-efficiency solar cells due to its tunable band gap to match well the solar spectrum. In this study, semiconducting Cu(In,Ga)(Se,S)2 thin films were prepared by a classical two-step growth process, which involves the selenization and/or sulfurization of In/Cu?Ga precursor. During the precursor formation step metallic In/Cu?Ga alloys were deposited onto the Mo-coated soda-lime glass substrates by DC magnetron sputter process. The respective precursors were subsequently reacted with H2Se and/or H2S gasses, at elevated temperatures. By optimizing the selenization parameters, such as the gas concentrations, reaction time, reaction temperature, and the flow of H2Se and H2S, high quality, single...

UK PubMed Central (United Kingdom)

Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V...Full Text Available

Energy Technology Data Exchange (ETDEWEB)

The group- V vacancy pair, the so-called E-center, has recently been demonstrated to have, both in Si and Ge, more complicated energy-level schemes in the energy gap than were previously assumed. The E-center in silicon has, in addition to its well-established single-acceptor level in the upper half of the band gap, also a donor level in the lower half of the band gap; this donor level has lain hidden for more than 40 years. The E-center in Ge has an even more complicated level scheme as it induces, in addition to two levels analogous to those found in Si, also a double-acceptor level in the upper half of the band gap. Thus the E-center in Si can exist in three charge states and the E-center in Ge in four.

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The dispersion curves E(k-bar) have been calculated for bound and resonant (110) surface states of AlSb, AlAs, and AlP. AlSb is predicted to have no surface states within the bulk fundamental band gap, but AlAs and AlP are predicted to have surface state band minima which are very near the conduction band edge, and could lie either within the gap or immediately above the edge.

Energy Technology Data Exchange (ETDEWEB)

A comparitive analysis is made of the principal characteristics of narrow-band and conventional semiconductor light amplifiers. It is shown that quasi-distributed filtering of the spontaneous radiation ensures a high gain and a low level of the spontaneous noise at the amplifier output.

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X-ray photoemission spectroscopy has been used to measure the valence band offset {Delta}E{sub v} for the AlP/GaP (001) heterojunction interface. The heterojunction samples were prepared by molecular-beam epitaxy. A value of {triangle}E{sub v}=0.43 eV is obtained (staggered band alignment, with AlP valence band below that of GaP). 24 refs., 8 figs., 1 tab.

International Nuclear Information System (INIS)

The electronic structures of platinum group elements (Ru, Os, Rh, Ir, Pd, and Pt) silicides have been calculated. Ir_3Si_5 is a semiconductor with the direct gap of 1.14 eV. Among monosilicides, RuSi and OsSi with the FeSi-type structure are semiconductors with the gap values of 0.21 and 0.41 eV but RhSi, IrSi, PdSi, and PtSi with the MnP-type structure are metals. No semiconducting compounds can be found in other platinum group elements silicides other than known Ru_2Si_3, Os_2Si_3, and OsSi_2.

Energy Technology Data Exchange (ETDEWEB)

The pressure dependence of the photoluminescence (PL) transition associated with the fundamental band gap of ZnO nanowires has been studied at pressures up to 15 GPa. ZnO nanowires are found to have a higher structural phase transition pressure around 12 GPa as compared to 9.0 GPa for bulk ZnO. The pressure-induced energy shift of the near band-edge luminescence emission yields a linear pressure coefficient of 29.6 meV/GPa with a small sublinear term of -0.43 meV/GPa{sup 2}. An effective hydrostatic deformation potential -3.97 eV for the direct band gap of the ZnO nanowires is derived from the result.

Energy Technology Data Exchange (ETDEWEB)

The difficulty in making good Ohmic contact at the interfaces with p-doped ZnSe is an important problem hindering the realization of blue-light-emitting diode lasers based on the II-VI semiconductor technology. So far no metal or semiconductor material has been found to have a low enough barrier at the (001) interface with ZnSe. A possible solution to this problem is the insertion of a so-called {ital barrier-reduction layer} at the interface with ZnSe. We have investigated the interface formation energies and valence-band offsets at the (001) interface between Al{sub x}Ga{sub 0.5{minus}x}In{sub 0.5}P and ZnSe. The results of our calculations show the existence of a strong interdependence between the valence-band offset and the interface geometric structure. The interface is found to have structural and electronic similarities to the GaAs-ZnSe(001) system. The very low values obtained for the ...

International Nuclear Information System (INIS)

We studied the influence of alloying on the structural and electronic properties of the unrelaxed and relaxed Si_1_-_yC_y random alloys by means of ab initio theoretical calculations using two methods: (i) a supercell approach in connection with the plane-wave pseudopotential method; (ii) the full-potential augmented plane-wave plus local orbitals (APW+lo) method. The first method is used to obtain the relaxed atomic structure. The relaxed atomic positions obtained by pseudopotential calculations were used to calculate the band structure via the second method. The local density approximation was used for the exchange and correlation energy density functional. We investigated the lattice parameters and band gap energies. We found that a quite smaller gap appears in the neighborhood of y=0.03125 concentration of C atoms. The band gap shows a large anomalous bowing ...

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The theoretical performance of ideal single- and multijunction cells are compared at 100xconcentration under a range of cloudless-sky conditions. The sensitivities of device performance to cell temperature and spectral variations are shown to depend on the number of junctions (one, two or three), the way in which the junctions are connected (series, parallel or independent), and the band gaps of the devices. The average performances of all of the multijunction devices surpass that of a single-junction GaAs device, but the inconsistency in performance of some of the multijunction devices is significant for large variations in cell temperature and incident spectrum. The choice of band gap and connection scheme is more important than the number of junctions in determining the consistency of device performance. (orig.).

British Library Electronic Table of Contents (United Kingdom)

Abstract Electronic structures of two representative zigzag and armchair models of aluminum phosphide nanotube (AlPNT) were investigated by density functional theory calculations. The structures were optimized and the bond lengths, tip diameters, band gaps, and dipole moments were calculated. Moreover, the quadrupole coupling constants (CQ) were calculated for the Al-27 atoms of the optimized structures. The same values of AlP bond lengths were calculated for both models. The larger value of band gap of armchair model than the zigzag model indicated the stronger dielectric property for the former model. The values of CQ(27Al) were the largest for the Al atoms placed at the tips of both zigzag and armchair AlPNT than other Al atoms, which could reveal dominant role of the Al atoms placed at...

International Nuclear Information System (INIS)

The highest equilibrium free-carrier doping concentration possible in a given material is limited by the ''pinning energy'' which shows a remarkable universal alignment in each class of semiconductors. Our first-principles total energy calculations reveal that equilibrium n -type doping is ultimately limited by the spontaneous formation of close-shell acceptor defects: the 3- -charged cation vacancy in AlN, GaN, InP, and GaAs and the 1- -charged DX center in AlAs, AlP, and GaP. This explains the alignment of the pinning energies and predicts the maximum equilibrium doping levels in different materials. (c) 2000 The American Physical Society

Energy Technology Data Exchange (ETDEWEB)

We give a theoretical design for a locally resonant two-dimensional cylindrical structure involving a pair of C-shaped voids in an elastic medium which we term as double 'C' resonators (DCRs) and imbedded thin stiff bars, that displays the negative refraction effect in the low frequency regime. DCRs are responsible for a low frequency band gap which hybridizes with a tiny gap associated with the presence of the thin bars. Using an asymptotic analysis, typical working frequencies are given in closed form: DCRs behave as Helmholtz resonators modeled by masses connected to clamped walls by springs on either side, while thin bars behave as a periodic bi-atomic chain of masses connected by springs. The discrete models give an accurate description of the location and width of the stop band in the case of the DCR and the first two dispersion bands for the periodic thin ...

Science.gov (United States)

Spontaneous emission in photonic crystals with anisotropic three-dimensional dispersion relation is studied. If the upper level is below a characteristic frequency omega(1), or above omega(2), or between omega(1) and omega(2), the radiation is a localized field with a frequency in the band gap, or a propagating field with a frquency in the band, or a diffusion field, respectively. An analytical expression for the Lamb shift is obtained. The Lamb shift for the current case is small compared to that in an ordinary vacuum or in one- or two-dimensional photonic crystals due to lower density of states. PMID:11017227

International Nuclear Information System (INIS)

Photonic band gap structures with single or multiple defects show potential for use in single-beam and multi-beam klystrons and particle accelerators. The primary concerns are the coupling between the modes at each individual defect site and the damping of unwanted higher order modes. A conceptual design of a PBG based, multi-beam klystron and methods to damp HOMs and to cool and tune the structure are presented.

British Library Electronic Table of Contents (United Kingdom)

Plasma polymerization of aniline is carried out in a radiofrequency plasma reactor and the effect of polymerization time is examined in the structural, optical and optoelectronic properties of deposited films. Conjugated structures of polyaniline like films are obtained with unique and broad optical absorption band in the ultraviolet and entire visible region. The width of the absorption band increases and hence the optical band gap decreases with polymerization time. The optical constants are extracted by Swanepoel method and the optical dispersion parameters are determined by employing the Wemple-DiDomenico single oscillator model. The films exhibit similar thermal stability in air and argon atmosphere in the region of interest for optoelectronic applications. The photoluminescence study...

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We summarize the results of point-contact Andreev-reflection (PCAR) spectroscopy in MgB{sub 2} doped by chemical substitutions, either magnetic (Mn) or non-magnetic (Al,C), obtained by us and by other groups in the last four years. Despite the variety of samples used (crystals and polycrystals of various origin) and some minor differences in the experimental techniques, these measurements have directly provided a complete and consistent picture of the effects of chemical substitutions on the gaps of MgB{sub 2} shedding light on other relevant parameters (scattering rates, DOSs) affected by doping. In Al-doped crystals and polycrystals, the gap amplitudes {delta}{sub {sigma}} and {delta}{sub {pi}} - obtained through a two-band Blonder-Tinkham-Klapwijk (BTK) fit of the Andreev-reflection conductance curves - decrease on increasing the Al content x (i.e. on decreasing the critical temperature of the contacts T{sub c}{sup A}), ...

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Using the transfer matrix method we calculate the omni-directional band gap of a 1-D photonic crystal consisting of alternating layers of two dielectric materials A and B with refractive index n{sub A} and n{sub B}, respectively. The refractive index of layer A is constant and the refractive index of layer B varies according to the envelope of a Gaussian function. We find that under certain circumstances it is possible to obtain 100% reflectivity for both polarizations and any value of the incident angle of the electromagnetic waves. Although the structure considered does not posses a higher omni-directional band gap than the periodic sequence of low and high constant refractive indexes, it can be used to produce a new type of omni-directional mirrors without abrupt interfaces. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Energy Technology Data Exchange (ETDEWEB)

A strong dependence of thermal activation energy (TAE) on infrared (IR) stimulation time for the infrared stimulated luminescence (IRSL) signal was observed for K-feldspar grains extracted from several sediments and granites from China. A TAE value as low as {approx}0.1 eV was observed at the beginning of IR stimulation and increased to {approx}0.45 eV after 90 s. For a trap depth of {approx}2 eV below the conduction band for the IRSL traps, the TAE value of {approx}0.45 eV is consistent with the energy gap between the excited states ({approx}0.5 eV below the conduction band) and conduction band. This phenomenon is explained as the result of the coexistence of thermally assisted recombination via conduction band or band-tail states hopping and athermal tunnelling recombination of electrons from the excited states under IR stimulation, leading to the observation ...

Energy Technology Data Exchange (ETDEWEB)

The coherent interaction of femtosecond laser pulses and a thin CdSe sample is investigated both experimentally and theoretically. Observation of coherent phenomena in semiconductors is very rare because the incoherent processes occur in the femtosecond time domain in these materials. One example of such a phenomena is the so called optical Stark effect of exciton where a blue shift of the exciton resonance occurs as a result of pumping below the bandgap. The coherent effects involving band-to-band and also exciton transitions. Using femtosecond transmission measurements clear evidence was observed for coherent interference effects of the light field and the driven material polarization. These interferences manifest themselves as oscillatory structures in the differential transmission spectra. The oscillatory features are explained by comparison with a semiclassical theory. Examples of the computed results are presented for different time ...

British Library Electronic Table of Contents (United Kingdom)

The microdynamics of soliton waves and localized modes of nonlinear vibrations of the acoustic and optical types in uranium nitride has been investigated. It has been shown that, with an increase in the excitation energy in the spectral gap between the bands of optical and acoustic phonons, the energies of solitons increase, whereas the energies of local modes decrease. The previously experimentally observed unidentified quasi-resonant features, which shift in the gap with variations in the temperature, can represent the revealed soliton waves and local modes. The microdynamics of heat conduction of uranium nitride has been studied for the stochastic generation of soliton waves and local modes in the case of spatially distant energy absorption. The thermal conductivity coefficient determin...

Energy Technology Data Exchange (ETDEWEB)

Recently, the public has become aware of keywords like ''Quantum computer'' or ''Quantum cryptography''. Regarding their potential application in solid state based quantum information processing and their overall benefit in fundamental research quantum dots have gained more and more public interest. In this context, quantum dots are often referred to as ''artificial atoms'', a term subsuming their physical properties quite nicely and emphasizing the huge potential for further investigations. The basic mechanism to be considered is the theoretical model of a two-level system. A quantum dot itself represents this kind of system quite nicely, provided that only the presence or absence of a single exciton in the ground state of that structure is regarded. This concept can also be expanded to the presence of two excitons (bi-exciton). Transitions between the relevant levels can be ...

British Library Electronic Table of Contents (United Kingdom)

In this paper, it is shown that (In1?xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.

British Library Electronic Table of Contents (United Kingdom)

The nanostructure Ni-doped CdO films have been prepared by sol gel spin coating method. Atomic force microscopy results indicate that the CdO films are formed from the nanoparticles and the grain size is changed with nickel content. X-ray diffraction patterns of the films indicate that the undoped and Ni-doped CdO films have polycrystalline structure with a cubic sodium chloride structure, showing two main characteristic peaks assigned to the (111) and (200) planes. The optical band gap values of undoped and Ni-doped CdO films were determined by optical absorption method. The Eg values of the CdO films were found to be in the range of 2.26?2.60?eV. The Eg values of the CdO films increase with the content of Ni dopant (up to 6% Ni). It is evaluated that the optical band gap and grain size o...

British Library Electronic Table of Contents (United Kingdom)

A mechanical model with local resonators is proposed as an acoustic metamaterial that exhibits an unusual frequency-dependent effective stiffness. If treated as an equivalent elastic solid, its effective Young's modulus can become unbounded or vanishingly small at two respective frequencies. Moreover, in a certain frequency range, the effective Young's modulus would become negative, resulting in a band gap that coincides with this frequency range. The wave attenuation behavior and mechanism are studied through numerical simulations on the acoustic metamaterial model. The capability of the metamaterial to selectively block or filter unwanted waves is demonstrated by a numerical simulation example.

International Nuclear Information System (INIS)

We report the results of a theoretical study of the electronic and structural properties of the hexagonal beryllium nitride, using first principle pseudopotential plane wave (PP-PW) as well as full potential linearized augmented plane wave (FP-LAPW) methods within density functional theory. In the case of PP-PW we generated the pseudopotential by the highly optimized Q_c-tuning method and used the local density approximation and generalized gradient approximation (GGA) for the exchange-correlation potential. We applied pressure on the unit cell by the Wentzcovitch and traditional methods. In the FP-LAPW approach only the GGA was used for the exchange-correlation potential. Our calculated values for structural properties, based on both approaches are in reasonable agreement with experimental and other theoretical (Hartree Fock) results. By applying the above two approaches and also the Tight Binding Linear Muffin Thin Orbital method, the ground state Kohn-Sham eigenvalues were ...

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This work concerns the study of the nuclear superdeformation phenomenon in the rare earth region (A {approx} 150). The superdeformed (SD) states in Gadolinium and Dysprosium isotopes were produced via heavy-ion induced reactions and studied with the (EUROGAM EUROpean GAmma-ray Microscope) gamma multidetector array. Precise level attenuation method (DSAM). From the derived quadrupole moments, we find large differences in deformation between the yrast bands in neighbour nuclei explained in terms of the case of nuclei corresponding to an axis ratio of 2:1, the shell gaps are not fixed at a specific particle number and deformation. Furthermore the present results indicate that the deformations associated with identical bands are different supporting the picture that mass and deformation changes tend to compensate in SB bands with the same moments of inertia. (author). 114 refs.

International Nuclear Information System (INIS)

A systematic study for the materials design of III-V and II-VI compound-based ferromagnetic diluted magnetic semiconductors is given based on ab initio calculations within the local spin density approximation. The electronic structures of 3d-transition-metal-atom-doped GaN and Mn-doped InN, InP, InAs, InSb, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs and AlSb were calculated by the Korringa-Kohn-Rostoker method combined with the coherent potential approximation. It is found that the ferromagnetic ground states are readily achievable in V-, Cr- or Mn-doped GaN without any additional carrier doping treatments, and that InN is the most promising candidate for high-T_C ferromagnet. A simple explanation of the systematic behavior of the magnetic states in III-V and II-VI compound-based diluted magnetic semiconductors is also given. It is also shown that V or Cr-doped ZnS, ZnSe, and ZnTe are ferromagnetic without p- or n-type doping ...

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Photocurrent and capacitance measurements of semiconductor passive films formed on metals and alloys can be used to study the electronic properties and reveal indirect information about structure and composition. The current work used these techniques to investigate the electronic properties of the passive films formed on three austenitic stainless steels, types 304L, 316L and 254SMO, in borate. Evidence was found for the existence of a large number of localised mid bandgap states, consistent with amorphous oxides. However, the flat-band potentials of the austenitic stainless steel passive films were found to be independent of both composition and measuring frequency. The most credible explanation for the bandgap values determined from photocurrent measurements is that the passive films are formed as dual layers, iron oxide outer layer and chromium oxide inner layer. This model does not need to evoke the potential dependent bandgaps used by ...

CERN Document Server

The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced superconductivity in undoped Ge/Si core/shell NW heterostructures contacted by superconducting leads. By using a top gate electrode to modulate the carrier density in the NW, the critical supercurrent can be tuned from zero to greater than 100 nA. Furthermore, discrete sub-bands form in the NW due to confinement in the radial direction, which results in stepwise increases in the critical current as a function of gate voltage. Transport measurements on these superconductor-NW-superconductor devices reveal high-order (n = 25) resonant multiple Andreev reflections, indicating that the NW channel is smooth and the charge transport is highly coherent. The ability to create and control coherent superconducting ordered states in ...

International Nuclear Information System (INIS)

This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the ...

CERN Document Server

Many sunspot cycles are double peaked. In 1967 Gnevyshev suggested that actually all cycles have two peaks generated by different physical mechanisms, but sometimes the gap between them is too short for the maxima to be distinguished in indices of the total sunspot activity. Here we show that indeed all cycles have two peaks easily identified in sunspot activity in different latitudinal bands. We study the double peaks in the last 12 sunspot cycles and show that they are manifestation of the two surges of toroidal field - the one generated from the poloidal field advected all the way on the surface to the poles, down to the tachocline and equatorward to sunspot latitudes, and another one generated from the poloidal field diffused at midlatitudes from the surface to the tachocline and transformed there into toroidal field. The existence of these two surges of toroidal field is due to the relative magnitudes of the speed of the large-scale solar ...

British Library Electronic Table of Contents (United Kingdom)

We investigated phase transition of ilmenite-type AgSbO3 to pyrochlore by post-heat treatment and the synergy effect of the mixed phases of AgSbO3 on the photocatalytic activities to enhance the activities. The AgSbO3 with an ilmenite structure was prepared by a cation-exchange method. Phase transition from the ilmenite to pyrochlore occurred by proper control of post-heat treatment. The sample that was obtained by post-heat treatment of ilmenite-type AgSbO3 at 660^oC for 3h consisted of both of the ilmenite and pyrochlore phases, and the sample at 685^oC for 4h mainly consisted of the pyrochlore phase. Together with an increase in the ratio of the pyrochlore phase, the optical absorption spectra blue-shifted. The band gaps of single phases of the ilmenite and the pyrochlore were 2.4 and 2...

Energy Technology Data Exchange (ETDEWEB)

The passive films formed on 316L stainless steel in various NaCl solutions have been investigated by capacitance measurements (Mott-Schottky). Pitting parameters have been determined using the galvano-kinetic polarisation method. The obtained results reveal the existence of a shallow and a deep donor level localised in the band gap of the semiconducting oxide film. These energy levels are due to iron ions in the tetrahedral and octahedral positions. It also appears that the participation of the deep donor level effects the electric field. The study developed allows us to compare characteristic parameters of the electronic structure of the passive film to those related to pitting susceptibility. (authors) 25 refs.

British Library Electronic Table of Contents (United Kingdom)

Abstract High-crystallinity hierarchical anatase TiO2 hollow spheres were prepared by a high-temperature (350 C) and non-aqueous solvothermal method in the absence of water, templates, or additives. The hollow structures were assembled from highly crystallized TiO2 nanoparticles and exhibit superior photocatalytic properties relative to those of Degussa P25 TiO2 under irradiation with UV light. The influence of reaction temperature on the crystallinity, morphology, crystallite shape and size, band gap, specific surface area, and pore size distribution of TiO2 has been studied in detail. It is evident that reaction temperature is the most important factor to increase the crystallinity of TiO2 in order to improve its charge transfer and transport properties, which are important in photocatal...

British Library Electronic Table of Contents (United Kingdom)

A two-dimensional (2D) lattice model with anisotropic resonant microstructures is found to provide an anisotropic band gap structure. A 2D continuum with anisotropic effective mass density is introduced to represent this lattice system. Two methods are proposed to derive the equivalent continuum. In the first method, the effective mass density of the equivalent continuum is obtained by matching the dispersion relations for harmonic waves propagating in the principal directions. The second approach employs an approximate estimation of the effective mass density by volume-averaging an effective mass that represents the resonant microstructure. For both equivalent continuum models, the effective mass density is frequency-dependent and may become negative in certain frequency ranges. Subsequen...

Science.gov (United States)

The authors have studied (Al{sub x}Ga{sub 1{minus}x}){sub 0.5}In{sub 0.5}P doped with tellurium using deep level transient spectroscopy and associated electrical measurements. Several defect states are observed in the upper half of the band gap, that are believed to be intrinsic to the alloy system as well as related to the tellurium donors. Defects observed at measurement temperatures above 390 K exhibit a hysteretic behavior. The observed spectra depend on the biasing conditions applied to the Schottky diode during cooling. The hysteretic behavior suggests the existence of different defect configurations, which can be accessed under conditions of high temperatures and electrical stress, but remain stable below 300 K.

KoreaScience (Korea)

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... nent to the design and construction of metal-semiconductor solar cells, in that both the photovoltage and the efficiency of metal-semiconductor cells ...

Energy Technology Data Exchange (ETDEWEB)

We used light confinement in optical microcavities to achieve a strong enhancement and a precise wavelength tunability of the electrical photoconductance of nanostructured porous silicon (PS). The devices consist of a periodic array of alternating PS layers, electrochemically etched to have high and low porosities - and therefore distinct dielectric functions. A central layer having a doubled thickness breaks up the symmetry of the one-dimensional photonic structure, producing a resonance in the photonic band gap that is clearly observed in the reflectance spectrum. The devices were transferred to a glass coated with a transparent SnO{sub 2} electrode, while an Al contact was evaporated on its back side. The electrical conductance was measured as a function of the photon energy. A strong enhancement of the conductance is obtained in a narrow (17nm FWHM) band peaking at the resonance. We present experimental results of the ...

Energy Technology Data Exchange (ETDEWEB)

The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been ...

Science.gov (United States)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for ...

Energy Technology Data Exchange (ETDEWEB)

This thesis deals with the special electronic properties of the transition-metal aluminides. Following quasicrystals and their approximants it is shown that even materials with small elementary cells exhibit the same surprising effects. So among the transition-metal aluminides also semi-metallic and semiconducting compounds exist, although if they consist of classic-metallic components like Fe, Al, or Cr. These properties are furthermore coupled with a deep pseusogap respectively gap in the density of states and strongly covalent bonds. Bonds are described in this thesis by two eseential properties. First by the bond charge and second by the energetic effect of the bond. It results that in the caes of semiconducting transition-metal aluminides both a saturation of certain bonds and a bond-antibond alteration in the Fermi level is present. By the analysis of the near-order in form of the so-calles coordination polyeders it has been succeeded to establish a simple ...

International Nuclear Information System (INIS)

A new study on the pressure-induced phase transitions of TiO_2 has been performed using all-electron density-functional theory based computations with the projector augmented wave and the linearized augmented plane wave methods considering five experimentally observed structures. The static results yield a picture that is consistent with experiments, i.e., phase transitions with pressure are predicted as rutile #-># monoclinic baddeleyite (MI) #-># orthorhombic I (OI) #-># cotunnite (OII) on compression, and OII #-># OI #-># MI #-># columbite (TiO_2II) on decompression. The elasticities of these five polymorphs are compared. Except for the baddeleyite structure, which is considerably softer than the other polymorphs, all phases show a zero pressure bulk modulus in the range of 200-240 GPa, consistent with compression results and the single crystal elastic constant; on the basis of these results we can say that the cotunnite phase is not a superhard TiO_2 polymorph as ...

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A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

Energy Technology Data Exchange (ETDEWEB)

Polycrystalline ZnS semiconducting films have been prepared in sandwich configuration by spray pyrolysis technique using ZnO-coated glass substrates and mixed aqueous solutions of ZnCl{sub 2} and thiourea. The sandwich structures have been produced successfully by means of ZnO-coated glass substrates. The produced ZnS films have been crystallized in a wurtzite structure and had a direct band gap energy of 3.62 eV. The electrical properties of the sample have been studied by an analysis based on the thermally stimulated current spectra in the temperature range of 40-300 K with various heating rates. A set of curves of I (T) for varying initial density of filled traps at a heating rate of {beta} {sub 2}=0.06 K s{sup -1} indicate that the observed peaks in the TSC curve of polycrystalline ZnS films have first-order features. In order to evaluate the trap parameters of ZnS films, we have used curve-fitting method. The values of the frequency factor ...

International Nuclear Information System (INIS)

GaAs1-xPx p-n junction structures were grown on the epi-ready n-type GaAs(100) substrate by solid source MBE system for different phosphor compositions. To obtain the lattice-match sample structure was applied graded growth procedure. The structural and optical properties of the sample structures with different P concentration were investigated by using X-ray diffraction (XRD), spectroscopic ellipsometry (SE). In addition, The range of lattice parameters in the graded epilayer and phosphorous composition were determined from the HRXRD rocking curve simulation. We analyse dielectric function spectra of disordered GaAs1-xPx junction structures measured using spectroscopic ellipsometry at room temperature in the 0.6-4.7 eV photon energy region. The critical energy points such as band gap energy and spin-orbit-split energy of these structures were determined using SE data. It is detected that E0, E1 ,E2 energies of the GaAs1-xPx p-n junction ...

International Nuclear Information System (INIS)

In this study, WO3 thin films were grown on glass substrates using an aqueous solution containing tungstate (NH4)2WO4 as precursor. The substrate temperature incremented from 250 to 500 deg. C, by steps of 50 deg. C. The structural properties were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. Microprobe analyses showed that a balanced stoichiometric composition was obtained for thin films prepared at Ts = 350 and 400 deg. C. The X-ray diffraction analyses showed different structure crystallography in function of the substrate temperature. Moreover, films deposited at 400 deg. C were annealed in air for 2 h at 450 and 500 deg. C, respectively and the structural changes due to heat treatment were studied. Finally, the optical properties of these films were carried out using optical measurements of transmittance T(?) and reflectance R(?) spectra in 300-1800 nm domain. The refractive and absorption indexes, n and k were calculated. The ...

International Nuclear Information System (INIS)

Iron oxide thin films have been obtained by spray pyrolysis using 100% methanolic and ethanolic solutions of iron tri-chloride. The films were deposited onto ITO-coated glass substrates. The preparative conditions have been optimized to obtain compact, pin-hole-free and smooth thin films which are adherent to the substrate. The structural, morphological and compositional characterizations have been carried out by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The films deposited using ethanolic solution results into pure hematite; #alpha#-Fe_2O_3 thin films, however, films deposited using methanolic solution consists of hematite and maghemite-c phases of iron oxide. The films are nanocrystalline with particle size of 30-40 nm. The optical absorbance of the film was of the order of 10"5 cm"-"1. The optical band gap of films was found to be 2.26 and 2.20 eV for the films deposited using methanolic and ...

International Nuclear Information System (INIS)

The effect of electron and ion beam irradiation on the Sisub(LVV) Auger spectra of SiO_2, Si_3N_4 and Si-oxynitride films was measured by the relative intensity of the 92 eV signal, characteristic for the formation of 'free' silicon during irradiation. While in Si-oxynitride the beam effects were almost negligible, some damage was found in Si_3N_4, but SiO_2 appeared to be extremely sensitive for electron and ion beam irradiation. By low energy electron loss spectroscopy of ion bombarded SiO_2 and Si_3N_4 films new electron states due to broken Si-O and Si-N bonds could be determined within the band gap of the insulators. The measured energy losses were interpreted by means of electron energy level schemes of the amorphous films. (author).

International Nuclear Information System (INIS)

The structural, morphological and optical properties of vacuum-evaporated CdTe thin films were investigated as a function of substrate temperature and post-deposition annealing without and with CdCl2/treatment at 400 C for 30 min. Diffraction patterns are almost the same exhibiting higher preferential orientation corresponding to (111) plane of the cubic phase. The intensity of the (111) peak increased with the CdCl2/annealing treatment. The microstructure observed for all films following the CdCl2/annealing treatment are granular, regardless of the as-deposited microstructure. The grain sizes are increased after the CdCl2/annealing treatment but now contain voids around the grain boundaries. The optical band gaps, Eg, were found to be 1.50, 1.50 and 1.48 eV for films deposited at 200 K and annealed without and with CdCl2/treatment at 400 C for 30 min respectively. A progressive sharpening of the absorption edge upon heat treatment particularly ...

International Nuclear Information System (INIS)

We use the Generalized Quasi-Chemical Approach (GQCA) combined with ab initio ultrasoft pseudopotential calculations within density functional theory in order to obtain the structural and electronic properties of Al_xGa_yIn_1_-_x_-_yX (X=As, P or N) quaternary alloys in the zincblende structure. Results for the bond lengths show that their variations with composition are approximately linear and that they do not deviate much from the values of the corresponding binary compounds. For the variation of the band gaps, we obtain a bowing parameter b=0.26 eV for the (Ga_0_._4_7In_0_._5_3As)_z(Al_0_._4_8In_0_._5_2As)_1_-_z quaternary alloy lattice matched to InP, in very good agreement with experimental data. In the case of AlGaInN, a bowing parameter of 0.22 eV is obtained for zincblende AlGaInN lattice matched to GaN. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

KoreaScience (Korea)

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Science.gov (United States)

Basic research of the structure and electronic properties of a-Si:H is reported with particular emphasis on the role of defects. The main findings are as follows: (1) low defect density material can be deposited at a high rate using SiH/sub 4/ diluted in He or Ne. Using Ar or Kr results in a high defect density and columnar material; (2) an electrical bias during deposition modifies the band gap, hydrogen concentration and structure; (3) the clustering of hydrogen in the regions between the columns is confirmed; (4) hydrogen diffusion is observed by NMR; (5) the oxidation of an a-Si:H surface results in approx. 3 x 10/sup 11/ cm/sup -2/ dangling bonds at the interface; (6) auger recombination of photoexcited carriers is a significant non-radiative mechanism at low temperatures; (7) non-radiative recombination by diffusion and capture at dangling bonds is observed at temperatures above 50 to 100/sup 0/K; (8) the defect density in doped and ...

International Nuclear Information System (INIS)

Uniform and transparent thin films of Zn_1_-_xCo_xO (0 #=# 0.035, CoO (cubic) was detected as the secondary phase. Influence of Co addition on the volume fraction of grain boundaries has been interpreted. Increase in Co content in the range 0 #<=# x #<=# 0.10 led to quenching of near-band edge and blue emissions, decrease in band gap energy (E_g) from 3.36 eV to 3.26 eV, decrease in film thickness and refractive index and an increase in extinction coefficient of Zn_1_-_xCo_xO thin films. The change in nature of stress from compressive to tensile with lower to higher doping of Co is corroborative with the angular peak shift of (002) plane of ZnO lattice. An overall increase in microhardness of Zn_1_-_xCo_xO thin films up to x = 0.05 is attributed to change in microstructure and evolution of secondary phase and as the secondary phase separates out the overall stress is released leading to lowering of hardness after this ...

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The structure of hydroxylated oxide films (passive films) formed on Cr(110) in 0.5 M H{sub 2}SO{sub 4} at +0.35, +0.55, and +0.75 V/SHE has been investigated by in situ scanning tunneling microscopy (STM). Cathodic reduction pretreatments at {minus}0.54, {minus}0.64, and {minus}0.74 V/SHE destroy the well-defined topography of the single-crystal electrode and they have been excluded from the passivation procedure. Two different passive film structures have been observed, depending on the potential and time of passivation. At low potential (+0.35 V/SHE), the passive film, consisting mostly of chromium hydroxide, has a noncrystalline and granular structure whose roughness suggests local variations of thickness of ca. {+-} 0.5 nm. A similar structure is observed at higher potential (+0.55 V/SHE), but only for a short polarization time. For longer polarization at 0.55 V/SHE, and at higher potentials (+0.75 V/SHE), a crystalline structure is formed; the higher the potential, the faster the ...

Medline Plus

... the pulmonary vein and because there's a gap, electricity is going across the ablation line and capturing ...

DEFF Research Database (Denmark)

Udgivelsesdato: 2009

International Nuclear Information System (INIS)

Czech May 1979. p. 32-33. Czechoslovakia Benada, J. Spacek, B. Ustav

International Nuclear Information System (INIS)

English 2006 [1 p.] Germany Lenk, Andreas Institute of Structure Physics,

International Nuclear Information System (INIS)

The purpose of this work was to investigate the optical properties of several high T/sub c/ compounds in the form of sputtered films. The measurements are used toward this end: optical absorptance (using a calorimetric technique near 4.2K), which yields (after Kramers-Kronig analysis) the complex dielectric function, and thermoreflectance (which measures the change in reflectance in the optical range when a 1 to 10_0K temperature wave is applied), performed at two ambient temperatures (80 and 300_0K), yielding the differential dielectric function. The sputtered films included Nb"3Ge, Nb"3Al, V"3Ga and Nb"3Ir. It is noted that Nb"3Ir is not a high T/sub c/ superconductor. The thermoreflectance on the bulk samples V"3Si, V"3Ge and single crystal Cr"3Si were not performed because the samples were not in the form of thin films. The thermomodulation studies are correlated with the absorptance measurements in comparison to band structure calculations. When ...

CERN Document Server

We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal analyses, we elucidate how the spin modulation in semiconductor lasers can improve performance, as compared to the conventional (spin-unpolarized) counterparts. We reveal that the spin-polarized injection can lead to an enhanced bandwidth and desirable switching properties of spin-lasers.

Energy Technology Data Exchange (ETDEWEB)

A gas diffusion semiconductor electrode and solar cell and a process for gaseous fixation, such as nitrogen photoreduction, CO/sub 2/ photoreduction and fuel gas photo-oxidation are described. The gas diffusion photosensitive electrode has a central electrolyte porous matrix with an activated semiconductor material on one side adapted to be in contact with an electrolyte and a hydrophobic gas diffusion region on the opposite side adapted to be in contact with a supply of molecular gas.

International Nuclear Information System (INIS)

Photoelectrochemical current response of passive film was investigated for pure Cr and Fe-xCr (x = 8, 14, 18) alloys polarised potentiostatically in 0.1 kmol m"-"3 H_2SO_4 solution. Photoelectrochemical action spectrum could be separated into two or three constituents. These components were considered to be derived from Cr_2O_3 (E_g"o"p"t#propor to#3.6 eV) and Cr(OH)_3 (E_g"o"p"t#propor to#2.5 eV), and possibly CrO OH. The optical band gap, E_g"o"p"t, of each component was almost constant for various applied potentials, polarisation periods, and substrate materials. Flat band potential E_j_b at which the polarity of photocurrent changes from negative to positive with increasing potential was determined for each phase. E_j_b for Cr(OH)_3 on Cr and Fe-Cr alloys was about 250 mV_A_g_/_A_g_C_l. E_j_b for Cr_2O_3 was about 700 mV for Cr and about 500 mV for Fe-Cr alloys. E_j_b of Cr_2O_3 for Fe-Cr alloys slightly shifted in ...

International Nuclear Information System (INIS)

The [402]5/2 bands in "1"7"7Ta which are ''identical'' to the neighboring even-even "1"7"6Hf groundstate band have been extended to higher angular momentum. These bands in the two nuclei are seen to diverge from each other in the region of the first i_1_3_/_2 neutron alignment. The lower observed crossing frequency for the [402]5/2 bands indicates a lower deformation for these bands compared to "1"7"6Hf. Extensions to the h_9_/_2 [541]1/2 yrast band are also reported. (orig.).

International Nuclear Information System (INIS)

Throughout the last decades, plasma technology has been established in a series of surface treatment applications, e.g. for semiconductor processing or optical coatings. The majority of plasma assisted technologies is based on low pressure processes. In recent years, however, non-thermal atmospheric pressure discharges have attracted considerable interest because of their simplified technical devices for industrial applications as compared to low pressure processes which require vacuum equipment. Hence, batch processing can be avoided, thus facilitating the implementation of plasma process steps into production lines. Investment costs are cut down significantly. The use of atmospheric pressure plasmas for technical applications dates back to the ozone production with dielectric barrier discharges (DBD) by Siemens in 1857. Lately, the application of atmospheric pressure plasmas for surface treatment has been reported, e.g. for the treatment of foils to improve ...

Energy Technology Data Exchange (ETDEWEB)

The nano-structured Fe(III)-doped TiO{sub 2} photocatalysts with anatase phase have been developed for the oxidation of non-biodegradable different organic dyes like methyl orange (MO), rhodamine B (RB), thymol blue (TB) and bromocresol green (BG) using UV-Hg-lamp. The different compositions of Fe{sub x}Ti{sub 1-x}O{sub 2} (x = 0.005, 0.01, 0.05, and 0.1) nanocatalysts synthesized by chemical method (CM), have been characterized by X-ray diffraction (XRD), UV-vis diffuse reflectance spectra, specific surface area (BET), transmission electronic microscopy (TEM) analysis, XPS, ESR and zeta potential. From XRD analysis, the results indicate that all the compositions of Fe(III) doped in TiO{sub 2} catalysts gives only anatase phase not rutile phase. For complete degradation of all the solutions of the dyes (MO, RB, TB, and BG), the composition with x = 0.005 is more photoactive compared all other compositions of Fe{sub x}Ti{sub 1-x}O{sub 2}, and degussa P25. The decolorization rate of ...

Energy Technology Data Exchange (ETDEWEB)

The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical ...

International Nuclear Information System (INIS)

The ternary compound CuInS2 is attractive for solar cells due to its band gap of 1.54 eV which borders the optimum value necessary for conversion of a solar spectrum. Recently, works on thin film cells based on this material (ZnO/CuInS2) has been reported to show efficiency as high as 11.4%. In this paper, the orientation and the morphology of CuInS2 sprayed films are determined by the means of X-ray diffraction and scanning electron microscopy. Sprayed CuInS2 films deposited onto a transparent Pyrex substrate with standard fabrication parameters show a chalcopyrite structure with a preferential orientation (1 1 2). A model based on the calculation of the relative dielectric function ? has been performed in order to obtain the profile of variation of this parameter and to understand the optical behavior of this material via its transmittance and reflectance in visible and near-infrared regions (0.35-2.5 ?m). In the same way, considering the ...

Energy Technology Data Exchange (ETDEWEB)

Three- and four-junction III-V devices are proposed for ultrahigh-efficiency solar cells using a new 1-eV material lattice-matched to GaAs, namely, GaInNAs. We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. Under the AM1.5 direct spectrum with all the light higher in energy than the GaAs band gap filtered out, the prototypes grown with base doping of about 10{sup 17}&hthinsp;cm{sup {minus}3} have open-circuit voltages ranging from 0.35 to 0.44 V, short-circuit current densities of 1.8 mA/cm{sup 2}, and fill factors from 61{percent} to 66{percent}. To improve on the current record-efficiency tandem GaInP/GaAs solar cell by adding a GaInNAs junction, the short-circuit current density of this 1-eV cell must be significantly increased. Because these low short-circuit current densities are due to short diffusion lengths, we have demonstrated a depletion-width-enhanced ...

International Nuclear Information System (INIS)

In this work, ?-SnS2 thin films have been prepared on glass substrates by the spray pyrolysis technique using an alcohol solution which contains tin chloride (SnCl4) and thiourea (SC(NH2)2) as precursors. The structural study shows that ?-SnS2 thin film prepared using optimal experimental conditions: substrate temperature Ts = 280 deg. C and the concentration ratio of sulfur and tin elements in the spray solution x = [S]/[Sn] = 2.5, crystallizes in the hexagonal phase with a strong (0 0 1) X-ray diffraction line. In the same way, microprobe analyses (EPMA) as well as X-ray photoelectron spectroscopy (XPS) show the presence of undiserable phase of SnO2. From the transmission and reflectance spectra, the band gap energy is 2.65 eV. On the other hand, the photothermal properties of such films have been studied, the thermal conductivity was Kc = 0.85 W m-1 K-1 and the thermal diffusivity was Dc = 14.5 x 10-6 m2 s-1. The analysis of ?-SnS2 thin ...

International Nuclear Information System (INIS)

Full text: Hybrid functionals, containing a fraction of the exact exchange, allow for a rather accurate treatment of e.g. small molecules and band gaps in bulk materials. A plane-wave based algorithm was implemented in VASP (Vienna Ab-initio Simulation Package) to accomplish the calculation of the exact exchange. Two functionals including exact exchange are presently available, i.e. the PBE0 (Perdew-BurKEX-Ernzerhof) and the HSE (Heyd-Scuseria-Ernzerhof). A rigorous assessment of the implementation was performed by geometry optimization and calculation of the atomization energies of the G2-1 quantum chemical test set, containing 55 molecules. Excellent agreement compared to corresponding Gaussian 03 data and good agreement with experiment was achieved. The mean absolute error (theory related to experiment) for the atomization energies calculated with the PBE and the PBE0 is 8.6 and 3.7 kcal/mol, respectively. To investigate the properties of ...

Energy Technology Data Exchange (ETDEWEB)

Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

International Nuclear Information System (INIS)

The crystal structure, electronic structure, and photoluminescence properties of EuxSi6-zAlz-xOz+xN8-z-x (x=0-0.1, 0xMySi6-zAlz-x-yOz+x+yN8-z-x-y (M=2Li, Mg, Ca, Sr, Ba) have been studied. Single-phase EuxSi6-zAlz-xOz+xN8-z-x can be obtained in very narrow ranges of x?0.06 (z=0.15) and z2+ ions can be incorporated into nitrogen-rich Si6-zAlzOzN8-z. The Eu2+ ion is found to occupy the 2b site in a hexagonal unit cell (P63/m) and directly connected by six adjacent nitrogen/oxygen atoms ranging 2.4850-2.5089 A. The calculated host band gaps by the relativistic DV-X? method are about 5.55 and 5.45 eV (without Eu2+ 4f5d levels) for x=0 and 0.013 in EuxSi6-zAlz-xOz+xN8-z-x (z=0.15), in which the top of the 5d orbitals overlap with the Si-3s3p and N-2p orbitals within the bottom of the conduction band of the host. EuxSi6-zAlz-xOz+xN8-z-x shows a strong green emission with a broad Eu2+ band centered at about ...

DEFF Research Database (Denmark)

Udgivelsesdato: DEC

Science.gov (United States)

The advanced technologies of Ka-Band systems such as high gain spot .... sometimes used based on link requirements for a specific application. .... received at NASA LeRC from a Ku-band satellite and retransmitted to the USAT at Ka-Band. .... and to the Office of Management and Budget, Paperwork Reduction Project ...

International Nuclear Information System (INIS)

Tris(8-quinolinolato)aluminum(III) (Alq3) shows electronic absorption bands at 378, 360 (in a 1:1 mixed solvent of methanol and ethanol (ME) at 77 K), 334, 316, 300, 263, 255.8, and 233 nm in ethanol at room temperature. According to the polarized fluorescence excitation spectrum together with MO calculations, for instance, the 360 nm band is assigned to an LL CT transition (an intramolecular charge transfer transition between two ligands), and the 378 nm band to an LM/ML CT one (an intramolecular charge transfer transition between ligand and metal). Alq3 shows a broad fluorescence band peaking at around 478 nm in the ME matrix at 77 K. The emission spectrum measured with a phosphoroscope has two emission bands at 567 and 478 nm. The 567 nm band accompanies vibronic bands at 578 and 605 nm, being safely assigned to a phosphorescence of Alq3. ...

CERN Document Server

The existence of n-particle n-hole deformed yrare bands in the N=28 isotones is explored using full pf-shell diagonalizations and the Lanczos Strength Function method. We find different 2p-2h and 4p-4h collective bands that, when allowed to mix, more often disappear. Only the 2p-2h yrare band in Cr-52 and the 4p-4h yrare band in Ni-56 survive, and only in this latter case, due to the reduced density of 2p-2h states, can the band be seen as a gamma-cascade.

Science.gov (United States)

Space Network Ku-band service. ... Completed GLAST mission schedule and budget assessment .... Utilize Ku band SN link (TDRSS) for science data return ...

Energy Technology Data Exchange (ETDEWEB)

The principle of conservation and transferability of chemical bonds explains the recent discovery by extended x-ray absorption fine-structure measurements of two unequal anion-cation bond lengths R/sub A/C and R/sub B/C in A/sub x/B/sub 1-x/C zinc-blende semiconductor alloys despite the close adherence of the lattice constant to the average value (Vegard rule). This bond alternation, manifested as a structural distortion to a local chalcopyrite coordination around the anions, explains also most of the observed optical bowing in semiconductor alloys.

Science.gov (United States)

The metal-semiconductor solar cell is a potential candidate for converting solar energy to electrical energy for space and terrestrial application. In this paper, a method for obtaining parameters of practical antireflection (AR) coatings for the metal-semiconductor solar cells is given. This method utilizes the measured equivalent index of refraction obtained from ellipsometry, since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculations of optical parameters for Ta/sub 2/O/sub 5/ AR coatings on Au-GaAs and Au-GaAs/sub 0.78/P/sub 0.22/ solar cells are presented for comparison. (AIP)

Science.gov (United States)

For coupled quantum wires and dots, tunneling effects and coherent transport for quantum computing are being studied. In 2D systems, electron-hole bilayers for exciton...

Science.gov (United States)

COATINGS FOR THE METAL-SEMICONDUCTOR SOLAR CELLS 3S GIVEN. THIS METHOD UTILIZES THE MEASURED EQUIVALENT INDEX OF. REFRACTION OBTAINED FROM ELLIPSOMETRY ...

Science.gov (United States)

Metal-semiconductor solar cells reported to date exhibit inherently low output voltages. This effect isa consequence of high diode "saturation" ...

Science.gov (United States)

The bands may be classified as primary if they merge into the eyewall encircling the eye of the storm, or secondary if they are disconnected from the ...

KoreaScience (Korea)

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Energy Technology Data Exchange (ETDEWEB)

Lifetimes have been measured for a dipole band in {sup 139}Sm using DSAM. The deduced B(M1) and B(E2) values as well as B(M1)/B(E2) ratios are compared with calculations in the framework of the TAC (Tilted Axis Cranking) and SPAC (Shears mechanism with Principal Axis Cranking) models. The dipole band in {sup 139}Sm can be considered as a magnetic rotational band with a prolate or triaxial nuclear deformation. (orig.)

KoreaScience (Korea)

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J-STORE (Japan)

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Science.gov (United States)

One of the NASA research activities was to identify, characterize, and simulate a series of technologies that could be used for hydrogen production at NASA Kennedy Space Center (KSC) using locally available sources. This project examined the production of hydrogen from solar energy. To produce hydrogen by water splitting, the operating voltage of conventional photovoltaic (PV) cells cannot supply the overvoltage required. Thus, the objective of this project was to research and develop photoelectrochemical (PEC) cells that can supply the required voltage for water splitting by constructing a multiple bandgap tandem PV cell and a photocatalyst that can be activated by infrared (IR) photons transmitted through the PV cell. The proposed concept is different from conventional PEC water splitting by using multiple band gap combinations. The advantages for this PEC cell concept is that the PV cells are not in contact with the electrolyte solution, ...

Energy Technology Data Exchange (ETDEWEB)

Systematic studies of the NdFeAsOF superconducting energy gap using point-contact Andreev-reflection (PCAR) spectroscopy are presented. At low temperatures the PCAR conductance spectra show a pair of gap-like peaks at about {+-} (4-7) mV and in most cases also a pair of humps at around {+-} 10 mV. Fits to the s-wave two-gap model of the PCAR conductance allowed to determine two superconducting energy gaps in the system. However, the energy-gap features disappear at T* = 15-20 K, much below the particular T{sub c} of the junction under study. At T* a zero-bias conductance (ZBC) peak emerges, which at higher temperatures usually overwhelms the spectrum with an intensity significantly higher than the conductance signal at lower temperatures. Possible causes of this unexpected temperature effect are discussed. In some cases the conductance spectra show just a reduced conductance around ...

Energy Technology Data Exchange (ETDEWEB)

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

International Nuclear Information System (INIS)

Heat transfer and flow characteristics of water boiling flow were experimentally investigated in narrow horizontal rectangular channels with the gaps of 0.6mm-2.03mm. The heat transfer of two-phase boiling flow was weakend in smaller gap. The two-phase friction pressure drop decreased with the gap size and the two-phase friction multipliers were smaller compared with those in normal channels. Correlations to predict te boiling heat transfer coefficients were obtained. (author)

International Nuclear Information System (INIS)

This paper presents a new method for the determination of the energy gap of superconductors. The V/sub max//kT versus #DELTA#/kT curve was calculated from tunneling theory. The maximum voltage in differential conductance V/sub max/ was measured from the electron tunneling spectrum. From V/sub max//kT and the curve, one can easily calculate the energy gap value #DELTA#. This method is simple, and the accuracy almost approaches that of the curve-fitting method.

Energy Technology Data Exchange (ETDEWEB)

Semiconductor properties of passive films formed on the Fe-18Cr alloy in a borate buffer solution (pH = 8.4) and 0.1 M H{sub 2}SO{sub 4} solution were examined using a photoelectrochemical spectroscopy and an electrochemical impedance spectroscopy. Photo current reveals two photo action spectra that derived from outer hydroxide and inner oxide layers. A typical n-type semiconductor behaviour is observed by both photo current and impedance for the passive films formed in the borate buffer solution. On the other hand, a negative photo current generated, the absolute value of which decreased as applied potential increased in the sulfuric acid solution. This indicates that the passive film behaves as a p-type semiconductor. However, Mott-Schottky plot revealed the typical n-type semiconductor property. It is concluded that the passive film on the Fe-18Cr alloy formed in the borate buffer solution is ...

Science.gov (United States)

... Briefly, a standard detonator (normally the Scale 1 Gap Test Donor, comprising an exploding bridgewire to initiate a low density PETN pellet and ...

International Nuclear Information System (INIS)

The disrupted magnetic braking theory for the period gap of cataclysmic variable systems is used to study the binary evolution of low-mass main-sequence-like stars with white dwarf companions. The model is able to reproduce the observed location and width of the gap provided that the average mass transfer rates above the upper edge of the gap are greater than about 1.9 x 10 to the -9th solar masses/yr. For the case of angular momentum loss by magnetic braking, the slope of the mass transfer rate with respect to orbital period is shown to range from 3.4 to 3.7. For the evolutionary sequences considered, the He-3 abundance at the surface of the secondary exceeds 0.0015 after the complete mixing phase, resulting in modifications in the nuclear burning development of nova explosions. 31 refs.

Energy Technology Data Exchange (ETDEWEB)

Energy flows in deep inelastic electron-proton scattering are investigated at a centre-of-mass energy of 296 GeV for the range Q{sup 2}{>=}10 GeV{sup 2} using the ZEUS detector. A comparison is made between events with and without a large rapidity gap between the hadronic system and the proton direction. The energy flows, corrected for detector acceptance and resolution, are shown for these two classes of events in both the HERA laboratory frame and the Breit frame. From the differences in the shapes of these energy flows we conclude that QCD radiation is suppressed in the large-rapidity-gap events compared to the events without a large rapidity gap. (orig.)

Energy Technology Data Exchange (ETDEWEB)

Our Andreev reflection measurements (Phys. Rev. Lett. 87 (2001) 137005) along with other experiments have led to a general consensus that MgB{sub 2} is a multiband superconductor with two main superconducting gaps closing at the same T{sub c}. Here we show the behavior of the small gap as a function of the temperature and magnetic field. This gap is isotropic with T{sub c} of the bulk material but with a specific small (crossover) critical magnetic field of about 1 T much lower than the real H{sub c2}. The latter field is anisotropic and is rather governed by the large gap and strongly anisotropic Fermi surface of the material.

British Library Electronic Table of Contents (United Kingdom)

The Formula Not Shown system of Formula Not Shown was first observed in auroral emissions by Meinel in 1950. Although the Formula Not Shown band system has been reinvestigated since this first spectral study, no laboratory spectrum of the (2,1) vibronic band has been obtained. We have recently built a continuous-wave cavity ringdown spectrometer, and as a first test of this spectrometer we observed the (2,1) band of Formula Not Shown in a positive column discharge cell. Many lines of the first positive band system of Formula Not Shown were also identified during the process of assigning this spectrum. The relative intensities of the Formula Not Shown and Formula Not Shown bands were found to change with discharge cell pressure, and so each spectral region was observed at two pressures to a...

Energy Technology Data Exchange (ETDEWEB)

Lithium isotope separation by displacement chromatography is studied using fundamental principles; the equations are derived assuming theoretical stages in lithium adsorption bands. The concentration profiles in the band are calculated numerically under unsteady state.

Science.gov (United States)

... to-noise density than the uplink budget has (74.2 ... in heav:, point-to-point link applications with ... 11.7 Expanded bands allocated (Ku band) (500 MHz ...

Energy Technology Data Exchange (ETDEWEB)

The effects of dilute impurity doping on charge-density wave (CDW) structures and gaps in NbSe{sub 3} 1T-TaS{sub 2} and 2H-NbSe{sub 2} have been studied by using a scanning tunneling microscope (STM) operating at 4.2 K. In Fe doped samples of NbSe{sub 3} the STM spectroscopy measurements indicate that the added impurities can significantly shift the CDW energy gaps. In NbSe{sub 3}, Fe reduces both CDW gaps by 25-30%, and produces changes in the conductance structure relative to the pure material. The images of Fe{sub 0.01}NbSe{sub 3} show that all three surface chains in the unit cell still carry a strong CDW modulation with no evident disorder. However, a change in the relative amplitudes of the high and low temperature CDWs is detected. The effects of Co and Ni impurities on the gaps in NbSe{sub 3} have also been studied. While Co increases both by 25-30%, Ni increases only the high temperature ...

International Nuclear Information System (INIS)

... deformed nuclei eigenvalues even-odd nuclei gold 195 hamiltonians iridium

International Nuclear Information System (INIS)

Lifetimes have been measured in the #pi#h_9_/_2 (yrast) and #pi#i_1_3_/_2 (excited) bands in the nuclei "1"8"1Ir and "1"8"7Au using the Recoil Distance Method (RDM). The results clearly indicate that the #pi#i_1_3_/_2 band exhibits an increased deformation over the #pi#h_9_/_2 band, in keeping with the premise that the delayed crossing in this band is due to enhanced quadrupole deformation. (author). 3 refs, 1 fig, 2 tab.

Energy Technology Data Exchange (ETDEWEB)

Bone marrow is one of the most radiosensitive organs. Irradiation causes a marked decrease in the total number of hematopoietic cells in the bone marrow. The reticular meshwork structure of marrow stromal cells, however, is relatively resistant to irradiation. Unimpaired stromal cell structure has been thought to be a prerequisite for the repopulation of hematopoietic cells during recovery from the effects of irradiation. The reticular framework is maintained by cell adhesion apparatuses such as gap junctions. The in vitro radiobiologic survival values of a cloned stromal cell line, H-1/A, were studied (n = 1.8, D0 = 138 cGy). Radiation doses of up to 4000 cGy had no detectable effects on the production of colony-stimulating factor 1. H-1/A cells communicate with each other via gap junctions as determined by the sensitive dye-transfer method. Gap-junctional communication between H-1/A cells was resistant to different levels ...

Energy Technology Data Exchange (ETDEWEB)

The accurate prediction of local hot spot during normal operation is important to ensure core thermal margin in a very high temperature gas-cooled reactor because of production of its high temperature output. The active cooling of the reactor core determining local hot spot is strongly affected by core bypass flows through the inter-column gaps between graphite blocks and the cross gaps between two stacked fuel blocks. The bypass gap sizes vary during core life cycle by the thermal expansion at the elevated temperature and the shrinkage/swelling by fast neutron irradiation. This study is to investigate the impacts of the variation of bypass gaps during core life cycle as well as core restraint mechanism on the amount of bypass flow and thus maximum fuel temperature. The core thermo fluid analysis is performed using the GAMMA+ code for the PMR200 block-core design. For the analysis not only are some ...

Energy Technology Data Exchange (ETDEWEB)

High-spin states in {sup 202}Pb and {sup 203}Pb have been investigated by in-beam {gamma}-ray spectroscopy following the reaction {sup 198}Pt({sup 9}Be,xn). A search for magnetic rotational bands in these isotopes confirmed one of the two bands previously assigned to {sup 202}Pb and revealed a new band in this isotope. No evidence for magnetic rotation has been found in {sup 203}Pb. (orig.)

International Nuclear Information System (INIS)

This section of the report is concerned with the study of the metallisation, oxidation and doping of materials which are of importance to the micro-electronics industry. The Van de Graaff accelerator and radioactive tracers are used for studying surface and sub-surface behaviour of these materials.

Energy Technology Data Exchange (ETDEWEB)

A theory has been developed for the mechano-catalytic water-splitting, which is the system of simultaneous H{sub 2} and O{sub 2} evolution by stirring the powder of an oxide semiconductor in pure water under the condition that the stirring rod must be kept in contact with the surface of the glass vessel. The kinetic equations and the coupling strength of the frictional energy conversion between mechanical and electrical systems are calculated . The total system composed of the formation of the dangling bonds on the glass surface, the trapping of the semiconductor particles at the microcrevice of the glass surface, the strong field inside the fine particles due to the frictional electricity, the mechanism of charge transfer from the semiconductor to the stirring rod, the hopping conduction of positive hole, the electric current density injected into water from the semiconductors, and the tunnel chemical ...

Science.gov (United States)

Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

Science.gov (United States)

... and technology-. The United States National Technology Roadmap for Semiconductors [ 11 still ... Moreover, higher volumes of production, better manufacturing capabilities and ... energy-efficient, reliable, high-performance, embedded (real-time), highly miniaturized, .... Optical Computing, Storage, and Communications. ...

Energy Technology Data Exchange (ETDEWEB)

Strains in multivalley semiconductors can destroy the strict equivalence of the valleys that is demanded by cubic symmetry. Significant changes in the properties of a semiconductor may result. A proposed implementation of quantum computing with donor atoms in silicon would suffer from alterations of the donor wave functions caused by strains that are produced by fabrication processes. Deliberately straining the silicon to an extent that removed all but one valley from participation in the lowest donor state, would prevent further changes in the wave function by strain. The strain required can be achieved with established technology for depositing silicon on SiGe alloys. (author)

Energy Technology Data Exchange (ETDEWEB)

The bibliography contains citations concerning plasma immersion ion implantation (PIII) and equipment. PIII is a new technique to implant plasma ions into materials for surface modification and treatment. Topics include plasma nitriding, semiconductor doping, ion energy distribution, ion dose, pulsed plasma, metal plasma, and defect passivation. References also review applications in semiconductor device and integrated circuit manufacture, silicon material fabrication, aerospace bearings, carbon coatings on metals, and ceramic coatings. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

International Nuclear Information System (INIS)

Authors obtained T1-weighted MRI images of the femoral head after fracture of the femoral neck and classified the signals into four patterns to investigate the sequential changes of the femoral head. The T1-weighted MRI images obtained initially after femoral neck fracture showed a normal pattern in 10 of the 15 hip joints studied. MRI images obtained subsequently still showed the normal signal pattern in eight of the 10 hip joints which had shown the normal pattern in the first MRI, while two of the 10 joints subsequently showed a band pattern. The joint with the homogeneous pattern in the first MRI subsequently showed a band pattern. Of the three joints with an inhomogeneous pattern in the first MRI, two joints showed a subsequent band pattern, and the other a normal pattern. The joints which showed a band pattern continued to show a similar band pattern. Eventually, all hip ...

British Library Electronic Table of Contents (United Kingdom)

Post-tensioned (PT) self-centering moment frames have been developed as an alternative to typical moment-resisting frames (MRFs) for earthquake resistance. When a PT frame deforms laterally, gaps between the beams and columns open. However, the gaps are constrained by the columns and the slab in a real PT self-centering building frame. This paper presents a methodology for evaluating the column restraint and beam compression force based on the column deformation and gap openings at all stories. The method is verified by cyclic tests of a full-scale, two-bay by one-story PT frame. Moreover, a sliding slab is proposed to minimize restraints on the expansion of the PT frame. Shaking table tests were conducted on a reduced-scale, two-by-two bay one-story specimen, which comprises one PT frame ...

Science.gov (United States)

This paper discusses the mechanisms of gas breakdown at low values of pressure and inter-electrode gap, i.e. in the vicinity of the Paschen minimum. In this area of pressure and inter-electrode gap values, breakdown occurs either through gas or vacuum mechanisms, and also the so called anomalous Paschen effect appears. Electrical breakdown of electropositive, electronegative and noble gases has been investigated theoretically, experimentally and numerically. Based on the results obtained, regions in which particular breakdown mechanisms appear have been demarcated. Special attention has been devoted to the anomalous Paschen effect as well as to the avalanche vacuum breakdown mechanism.

British Library Electronic Table of Contents (United Kingdom)

This paper presents a new method of extracting biologic particles from a mixture of particles. The method is based on the pumping effect in a p-shaped ultrasonic actuator, which has a gap between its two vibrating metal plates. An adhesive tape is placed at a proper position in the gap. Due to the pumping effect which is induced by the sound field in the gap, the particles with smaller mass and radius in the mixture can be pumped up to reach the adhesive tape; while the ones with larger mass cannot. Therefore, the particles with smaller mass and radius can be extracted from the mixture. A theoretical model which can well explain the operation principle and experimental phenomena is developed. By the experimental results and the theoretical analyses based on the model, the validity of the m...

British Library Electronic Table of Contents (United Kingdom)

Following Hurricane Katrina, the study of cantilevered sheet pile I-wall with gap or partial gap has become one of the central elements of the ongoing investigation pertaining to the re-building of hurricane protection systems in New Orleans, LA. Historically, the US Army Corps of Engineers (USACE) had mostly relied upon the Method of Planes (MOP) analysis procedure for slope stability analysis of I-wall systems. However MOP is a simplified procedure which does not satisfy total equilibrium. Nevertheless, MOP is still considered by USACE as a popular analysis tool because of its simplicity and ease of use in slope stability analysis. This paper demonstrates the applicability and suitability of MOP as a viable analysis tool for the analysis of New Orleans I-wall founded on layered cohesive ...

Energy Technology Data Exchange (ETDEWEB)

The purified integral membrane protein, band 3, from human erythrocytes was inserted into egg lecithin liposomes. The insertion of band 3 was determined from thermal transition data from the analysis of the C-H stretching region bands recorded at temperatures from 25 to -22[sup o]C. Raman spectra show that band 3 considerably broadens and lowers the thermal transition of egg lecithin liposomes, suggesting the insertion of band 3. The band 3-inserted liposomes were irradiated with gamma-rays (40 Gy) and the radiation target groups were determined by the analysis of the structural sensitive Raman bands in the 1600-1700 cm[sup -1] (amide I), 1200-1300 cm[sup -1] (amide III) and 550-1030 cm[sup -1] (side chain amino groups) regions. The radiation-sensitive groups as identified from Raman spectra in the region 550-1030 cm[sup -1] are tyrosines ...

UK PubMed Central (United Kingdom)

The effect of TP (triosephosphates:glyceraldehyde-3 phosphate, GAP, +dihydroxyacetone phosphate, DHAP) on respiration, phosphorylation and matrix ATP/ADP ratios of isolated oat mesophyll mitochondria...Full Text Available

International Nuclear Information System (INIS)

We compare experimental data for temperature dependence of the magnetic order parameter and the magnetic excitations (spin waves) in materials with a quenched orbital moment and a well-defined spin quantum number. It is observed that the thermal decrease of the two quantities proceeds according to the same analytical function of the type y(T)=1-cT"#epsilon# with an identical exponent #epsilon#. This power function applies not only asymptotically for T->0 but holds over a wide temperature range. The exponent #epsilon# is universal, i.e. independent of spin order type and lattice symmetry and depends only on the dimensionality of the relevant interactions and on whether the spin quantum number is integer or half-integer. The different T"#epsilon# functions are identified as representations of stable universality classes. The fact that order parameter and magnetic excitations follow the same T"#epsilon# function shows that the two quantities belong to the same universality class. The ...

Science.gov (United States)

The object of the test was to develop a method to field test the Exploding Bridgewire (EBW) System for proper functioning prior to use. Two basic designs were conceived and tested. The first design using a two element spark gap and a calibrated fuse link ...

International Nuclear Information System (INIS)

The natural convection characteristics of gas in a vertical narrow annular gap which had its bottom opened to high temperature fluid and its upper shielding exposed to low temperature sealant have been evaluated from simulated fluid experiments using water and from calculations using the three-dimensional thermal hydraulic analysis computer code THERVIS-III. The following results were obtained: (1) The critical Rayleigh number which represented the limit of convection generation increased as the aspect ratios #epsilon#_1 (height/circumference) and #epsilon#_2 (height/gap distance) increased. (2) The flow pattern along the circumferential direction was seen to depend more strongly on the radiant heat from the side wall, rather than the aspect ratios #epsilon#_1 and #epsilon#_2. (3) The temperature difference along the circumferential direction in the annular gap obtained from the calculation code coincided with that obtained ...

Science.gov (United States)

This report presents an overview of research activity currently being funded by the US Department of Energy (DOE) on solid wastes from coal gasification, coal liquefaction, and oil shale technologies, Projects conducted in the DOE energy technology centers and national laboratories, and in cooperative projects with other government agencies, private industry, and universities are developing the basic and applied technology and data on which present and future fuel-conversion and utilization processes depend. The report identifies data gaps and recommends research needs where warranted.

British Library Electronic Table of Contents (United Kingdom)

In many industrialised societies, women remain underrepresented in the sciences, which can be predicted by the gender gap in math achievement at school. Using PISA 2006 data, we explore the role of family background and single-sex schooling in girls' disadvantage in maths in South Korea and Hong Kong. This disadvantage is found to be associated with single-sex schooling, but not with family background. Attending a girls' school confers a benefit only in South Korea, whereas the gendered curriculum counteracts the selectivity advantage of girls' schools in Hong Kong. We find that a gendered social structure prevalent in both societies.

International Nuclear Information System (INIS)

The paper is concerned with the simulation of practical testing situations which are too difficult and/or expensive to replicate in a laboratory environment. Numerical experiments are described which simulate the differential eddy current probe response to the build-up and chemical flushing of magnetite in the crevice gap of a PWR steam generator unit. The simulation results agree well with the only experimental data available to the authors and lead to the conclusion that conventional differential eddy current probes should be capable of characterizing crevice gap conditions with respect to the presence of magnetite. (author).

Energy Technology Data Exchange (ETDEWEB)

The term "homology" or "homologous" means an amino acid similarity measured by the program, BLAST (Altschul et al (1997), "Gapped BLAST and PSI-BLAST: a new generation of protein database search programs", Nucleic Acids Res. 25:33 89 3402), and expressed as --(% identity n/n). In measuring homology between a peptide and a protein of greater size, homology is measured only in the corresponding region; that is, the protein is regarded as only having the same general length as the peptide, allowing for gaps and insertions.

Science.gov (United States)

The visible absorption spectra of 1,4-(dihydroxy)-9,10-anthraquinone and of Co(II), Ni(II), Cu(II) and Zn(II) chelates have been studied in different organic solvents. This system provides a model for the anthracycline antibiotics and their metal chelates. The band structure of the spectrum has been determined using the second and fourth derivatives of the spectrum. The visible absorption band of the parent molecule can be assigned to a single electronic state with a reduced dipole moment in the excited state; structure in this band is ascribed to two overlapping vibrational progressions. In contrast, the dianion (hydroxy protons removed) shows a single electronic state with an increased dipole moment in the excited state; structure in this band can be assigned to a single vibrational progression. All of the metal chelates show spectra which are similar in appearance to that of the dianion although the ...

International Nuclear Information System (INIS)

High-spin states (I < or approx. 50(#Planck constant#/2#pi#)) of the odd-odd nucleus "1"7"0Ta have been investigated with the "1"2"4Sn("5"1V,5n) reaction. The resolving power of Gammasphere has allowed for the observation of eleven rotational bands (eight of which are new) and over 430 transitions (#approx#350 of which are new) in this nucleus. Many interband transitions have been observed such that the relative spins and excitation energies of the 11 bands have been established. This is an unusual circumstance in an odd-odd study. Configurations have been assigned to most of these bands based upon features such as alignment properties, band crossings, B(M1)/B(E2) ratios, and the additivity of Routhians. A systematic study of the frequency at which normal signature ordering occurs in the #pi#h_9_/_2#nu#i_1_3_/_2 band has been performed and it is found that its trend is opposite ...

Energy Technology Data Exchange (ETDEWEB)

Counter-current two-phase flows of air-water in narrow rectangular channels with offset-strip fins have been experimentally investigated in a 760 mm long and 100 mm wide test section with 3.0 and 5.0 mm gap widths. The two-phase flow regime, channel-average void fractions and two-phase pressure gradients were studied. Flow regime transition occurred at lower superficial velocities of air than in the channels without fins. In the bubbly and slug flow regimes, elongated bubbles rose along the subchannel formed by fins without lateral movement. The critical void fraction for the bubbly-to-slug transition was about 0.14 for the 3 mm gap channel and 0.2 for the 5 mm gap channel, respectively. Channel-average void fractions in the channels with fins were almost the same as those in the channels without fins. Void fractions increased as the gap width increased, especially at high superficial velocity of air. ...

British Library Electronic Table of Contents (United Kingdom)

We have measured the frequency-dependent dielectric function of semi-crystalline polybutylene terephthalate (PBT) in the terahertz region between 100?GHz and approximately 2.8?THz. A characteristic band is observed around 2.38?THz. The intensity of this band is a good indicator of the degree of crystallinity of the different samples. A potential assignment of this band is proposed, based on the comparison with spectroscopic data of the structurally very similar polyethylene terephtalate (PET). Furthermore, the frequency-dependent index of refraction of PBT reveals more insight about the morphology and different thermal history of the samples under investigation.

Science.gov (United States)

... 4302, and to the Office of Management and Budget, Paper-work ... link coverage areas, so it is possible to receive your own ... mestic Ku-band satellite. ...

Energy Technology Data Exchange (ETDEWEB)

There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)

Science.gov (United States)

Imaging of NGC 7469 in the J, H, & K bands shows that the starburst 'ring' is a tight inner

International Nuclear Information System (INIS)

Augmented plane wave calculation of gadolinium electronic structure crystallized in a hexagonal close-packed lattice is carried out.

International Nuclear Information System (INIS)

The band offsets and subband levels in a double quantum well layer for a 660 nm-Ga_0_._4In_0_._6P/(Al_0_._5Ga_0_._5)_0_._5In_0_._5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical calculation of the Schroedinger equation for the layer structure by varying the conduction band offset and compared with the measured photoreflectance spectra. The conduction band offset ratio is determined to be 0.5+0.03. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

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The interaction of thermal radiation with conduction and convection in thermally developing absorbing, emitting, non-gray gas particulate turbulent suspension flow through a circular tube is investigated. The contribution of thermal radiation is obtained through evaluation of the total hemispherical emittance of the particulate cloud and through evaluation of single band absorptances for molecular gases, modified to account for the interaction with the particles. The governing differential equation is derived as a (nonlinear) energy equation, coupled with integral equations to find the thermal radiation contributions. The energy equation is solved numerically by an implicit finite difference with its iterative procedure. Qualitative results for Nusselt numbers are shown for a variety and range of parameters, such as optical thickness of particulates and single molecular gas bands, relative gas band position and ...

Science.gov (United States)

... 1-sigma ZOHF pixel-to-plxel statistical fluctuations ... Spatial frequency filtering shows distinct bands, but miss ... LOS emissivity at the point of closest ...

International Nuclear Information System (INIS)

... band theory excited states iridium 187 iridium 189 beta decay radioisotopes

International Nuclear Information System (INIS)

The search for alternative energy supplies continues since the oil crisis of 1973. One energy vector is dihydrogen, H_2. Of the group VI hydrides, water has been the focus of most studies in harnessing solar energy and generating H_2. Two basic photochemical strategies have been employed: molecular photocatalytic systems, and semiconductor based photocatalytic systems. The results have not met with the euphoric expectations of the mid-1970's because of the difficulties encountered in H_2O splitting (E"0 S"2 "-/S = + 0.51 eV, NHE) is another vehicle tapped as a potential source of H_2. Heterogeneous photocatalysis utilizing semiconductor particulates and sunlight as the photon source has been successful with interesting quantum efficiencies. To this end, novel photocatalytic devices have been developed; one of these uses two coupled semiconductors to achieve vectorial displacement of the photogenerated reducing and oxidizing ...

Science.gov (United States)

We will report on a new type of tunable semiconductor laser, which is based on the electronic selection of one Bragg grating among an array of such gratings in silica. The device that we have built operates at 120 Mb/s but extension to 1 Gb/s for Gigabit-Ethernet applications would be straightforward. In comparison with tunable semiconductor lasers using gratings in the III-V materials, silica gratings offer two significant advantages: 1-wavelength stability and predictability, 2-the ability to phusically overlap many gratings in a compact space in order to enable the selection of a large number of wavelengths for wavelength division multiplexed communications systems. The time required to chagne the wavelength in our laser has not been measured for lack of the necessary electronics but it is expected to be in the microsecond range on the basis of a straightforward calculation. The robust all solid-state nature of our device and its expected ...

Energy Technology Data Exchange (ETDEWEB)

This dissertation deals with both the theoretical and the technological aspects of monolithic tunable lasers, and the experimental techniques for opto-electronic integration. In the theoretical part, the principles and limitations of wavelength tuning and spectral linewidth reduction in monolithic semiconductor lasers are described, with coupled distributed feedback-Fabry Perot (DFB-FP) lasers and long DFB lasers as examples. Stepwise tuning of wavelength over tens of nanometers and continuous tuning over the range of a mode spacing are shown to be possible. Spatial hole burning is found to affect the spectral linewidth of lasers involving strong active gratings. On the technological side, one of the major issues is the fabrication of flexible gratings. Direct-writing techniques, such as focused ion beam (FIB) implantation and e-beam lithography, provide the resolution, flexibility and accuracy that conventional holographic lithography lacks. The parasitic ...

Energy Technology Data Exchange (ETDEWEB)

In this work it is made a study of the structure and electric properties of chlorate polyethylene (PE-CI) with double and simple bonds obtained by continuous plasma with resistive coupling to 13.5 MHz. The synthesis conditions are power between 10 and 14 W and pressure of (6-7) x 10{sup -2} Torr. The synthesized PE-Cl in that way is soluble in acetone what indicates that probably is formed of short chains and not it shows the generalized inter crossing that is presented in some syntheses by plasma and that it can degrade the electric properties of these polymers. The IR and XPS analysis show the vibration of the C-C, C=C and C-CI bonds. The morphology of the polymer after being dissolved shows a compact and flat configuration. The electric conductivity has an approximately lineal behavior in an interval of 35 to 90% of relative humidity. (Author)

International Nuclear Information System (INIS)

An overview on neutron scattering studies of ferromagnetic and antiferromagnetic all-semiconductor superlattices is presented. Diffraction experiments on MnTe/CdTe, MnTe/ZnTe and EuTe/PbTe superlattices show pronounced correlations between the MnTe and EuTe layers across the non-magnetic spaces, even though these layers are antiferromagnetic and the systems are nearly-insulating. Current theory status of these systems is discussed. Diffractometry and reflectometry data from EuS/PbS superlattices reveal pronounced antiferromagnetic coupling between the ferromagnetic EuS block. First polarized neutron reflectometry data from superlattices prepared of a novel ferromagnetic 'spintronics' material, Ga(Mn)As are also presented. (author)

International Nuclear Information System (INIS)

Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

International Nuclear Information System (INIS)

The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

Energy Technology Data Exchange (ETDEWEB)

Mass and charge distributions of products from fission of sup(242m)Am induced by thermal neutrons have been investigated by means of the semiconductor spectrometry of ..gamma.. radiation from a mixture of non-separated fragment nuclei. Specimens of the fissible material have been irradiated in the vertical experimental channel of the research reactor then the measurements have been performed with calibrated semiconductor detectors. Three experiments with substantially different irradiation times have been performed to expand the nomenclature of the investigated fission products. The spectra of ..gamma.. radiation from the mixture of fission products, and time dependences of the counting rates at the total absorption peaks have been handled with computers. The obtained yields are compared with data of previous investigations performed with different experimental methods, as well as with the calculated one.

CERN Document Server

We report electronic and magnetic structure of arsenic-doped manganese clusters from density-functional theory using generalized gradient approximation for the exchange-correlation energy. We find that arsenic stabilizes manganese clusters, though the ferromagnetic coupling between Mn atoms are found only in Mn$_2$As and Mn$_4$As clusters with magnetic moments 9 $\\mu_B$ and 17 $\\mu_B$, respectively. For all other sizes, $x=$ 3, 5-10, Mn$_x$As clusters show ferrimagnetic coupling. It is suggested that, if grown during the low temperature MBE, the giant magnetic moments due to ferromagnetic coupling in Mn$_2$As and Mn$_4$As clusters could play a role on the ferromagnetism and on the variation observed in the Curie temperature of Mn-doped III-V semiconductors.

International Nuclear Information System (INIS)

The radionuclide X-ray fluorescence analyzer consists of a source changer and a sample changer. "5"5Fe, "1"0"9Cd and "2"4"1Am are used as excitation sources. The radiation is detected with a semiconductor Si(Li) detector. The complete assembly of the apparatus consists of an imagine unit, a keyboard, a floppy disc drive, a printer, a console and a rack with analog and digital electronics. Its multichannel amplitude analyzer consists of power supplies, a high voltage supply, a linear amplifier, an analog-to-digital converter and a computer. The technical specifications are given. The control and data processing system is controlled with an MHB 8080A microprocessor. Software for semiconductor gamma spectrometry and for quantitative gamma spectrometry will be supplied with the equipment. (E.S.). 3 figs., 4 refs.

International Nuclear Information System (INIS)

The authors discuss several aspects of defect formation in epitax heterostructures based on solid solutions of A"3B"5 semiconductor compounds; these heterstructures were prepared by liquid phase epitaxy by cooling suitable high-temperature solutions from the initial growth temperature. An analysis shows that the regions near heterojunctions are regions of increased defect density even in compositions based on Al /SUB x/ Ga /SUB 1-x/ As-GaAs, Al /SUB x/ Ga /SUB 1-x/ P-GaP, Al /SUB x/ Ga /SUB 1-x/ Sb-GaSb, where the differences in lattice parameters of the contacting materials are a minimum.

Energy Technology Data Exchange (ETDEWEB)

The trend toward smaller dimensions in integrated circuit technology presents severe physical and engineering challenges for ion implantation. These challenges, together with the need for physically-based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in silicon. Recently the DOE Council on Materials requested that our panel examine the current status and future research opportunities in the area of ion beams in semiconductor processing. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. These topics were explored both from the perspective of emerging science issues and technology challenges.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

International Nuclear Information System (INIS)

The energy deposited by the passage of a single, energetic, heavy-ion through a semiconductor produces dense electron-hole (eh) pair concentrations near the ion trajectory. The size, shape, and charge density of an ion track represent critical parameters for many models of single event phenomena. The authors describe the design and uses of possible semiconductor test structures for measuring the initial radial distribution of charge and subsequent charge transport in a high energy, heavy-ion track. Numerical simulations show how the test structure can resolve different radial distributions of charge within an ion track. The test structure simulations also show the importance of accurately representing ion track structure in single event effects simulations.

Energy Technology Data Exchange (ETDEWEB)

One chemical reagent, hydrazine hydrate, was discovered to accelerate the growth of semiconductor nanocrystals (cadmium telluride) instead of additional energy, which was applied to the synthesis of high-quality CdTe nanocrystals at room temperature and ambient conditions within several hours. Under this mild condition the mercapto stabilizers were not destroyed, and they guaranteed CdTe nanocrystal particle sizes with narrow and uniform distribution over the largest possible range. The CdTe nanocrystals (photoluminescence emission range of 530-660 nm) synthesized in this way had very good spectral properties; for instance, they showed high photoluminescence quantum yield of up to 60%. Furthermore, we have succeeded in detecting the living Borrelia burgdorferi of Lyme disease by its photoluminescence image using CdTe nanocrystals.

International Nuclear Information System (INIS)

The measurements obtained here indicate ways in which micro-Raman spectroscopy can be used to elucidate structural characteristics and distribution of carbon in meteorites and interplanetary dust particles (IDPs). Existing information about structurally significant aspects of Raman measurements of graphite is combined with structurally relevant findings from the present micro-Raman studies of carbons prepared by carbonization of polyvinylidine chloride (PVDC) at various temperatures and natural material, as well as several acid residues from the Allende and Murchison meteorites in order to establish new spectra-structure relationships. Structural features of many of the materials in this study have been measured by x ray analysis and electron microscopy: thus, their structural differences can be directly correlated with differences in the Raman spectra. The spectral parameters consequently affirmed as indicators of structure are used as a measure of structure in materials that have ...

Energy Technology Data Exchange (ETDEWEB)

We study two correlated electrons in a nearest-neighbour tight-binding chain, with both on-site and nearest-neighbour interaction. Both the cases of parallel and antiparallel spin are considered. In addition to the free electron band for two electrons, there are correlated bands with positive or negative energy, depending on whether the interaction parameters are repulsive or attractive. Electrons form bound states, with amplitudes that decay exponentially with separation. Conditions for such states to be filled at low temperatures are discussed.

Energy Technology Data Exchange (ETDEWEB)

Flux-grown ScPO{sub 4} single crystals exhibit a number of luminescence bands in their x-ray-excited luminescence spectra - including sharp lines arising from rare-earth elements plus a number of broad bands at 5.6 cV, 4.4 eV, and 3 eV. The band at 5.6 eV was attributed to a self-trapped exciton (STE) [l], and it could be excited at 7 eV and higher energies. This luminescence is strongly polarized (P = 70 %) along the optical axes of the crystal and exhibits a kinetic decay time constant that varies from several ns at room temperature to {approximately}10 {micro}s at 60 K and up to {approximately}1 ms at 10 K. It is assumed that the STE is localized on the SC ions. The band at 3 eV can be excited in the range of the ScPO{sub 4} crystal transparency (decay time = 3 to 4 {micro}s.) This band is attributed to a lead impurity that creates different luminescence centers. At high ...

Energy Technology Data Exchange (ETDEWEB)

A case study is presented about the failure of a stainless steel blade reinforcing band in a steam turbine. The inspection results and analysis of samples of material are discussed. Being pitting corrosion and cracks the main defects found, a study of chemical composition and heat treatment state of the steel is made and findings are related to type of failure. (orig.)

International Nuclear Information System (INIS)

The first-order relativistic correction to the kinetic energy of an electron, the mass-velocity term, is not bounded from below. It can, therefore, not be used within a variational framework. To overcome this deficiency we developed a method to include the entire relativistic kinetic energy #sq root#(p"2c"2+m_0"2c"4)-m_0c"2 in a spline-augmented plane-wave band calculation. The first results for silver are quite promising, especially for d and p states: The analysis of the energies of the core states as well as of the valence band structure suggests that the energies of d bands are reproduced within 1 mRy. However, the combination of the relativistic kinetic energy with the Darwin term leads to energies which are too low for s-like valence states by 10 mRy. Therefore, the s and d valence band complex is spread out and the Fermi level is lowered by the same amount as the s states. We expect to overcome ...

International Nuclear Information System (INIS)

Absorption spectra of the CT bands of I_2 complexes with Et_2O, Et_2S, and Et_2Se in heptane have been measured up to 4400 bar at 25"0C. The equilibrium constants and the volume changes accompanying complex formation, and the molar extinction coefficients and absorption maxima have been estimated. The volume changes were comparable with those estimated by the visible I_2 bands and by the X-ray data of the I_2 complexes in the crystalline state. In the CT bands of Et_2S-I_2 and Et_2Se-I_2 complexes inversion of shift from red to blue has been observed with increasing pressure though the CT band of Et_2O-I_2 complex shifted only through red. This inversion appears to be characteristic of the strong CT complex. Enhancement of the molar extinction coefficient of the CT band has been found with increasing pressure suggesting enhancement of the CT interaction between I_2 and the n-donor. ...

Energy Technology Data Exchange (ETDEWEB)

The wavelength dependence of the threshold in an InGaP-InAlGaP vertical cavity surface emitting laser is investigated using a microscopic theory of the semiconductor gain medium. Good agreement is found between experiment and theory for the minimum threshold lasing wavelength for a range of laser structures.

International Nuclear Information System (INIS)

Recent progress with the (Al_xGa_1_-_x)_0_._5In_0_._5P alloy system has resulted in laser diodes which operate at room temperature at wavelengths below 640 nm. OMVPE is used to grow the multi-quantum-well devices in a graded-index separate-confinement configuration. Laser threshold currents as low as 75 mA have been achieved.

International Nuclear Information System (INIS)

An investigation of the Ll x-#gamma# angular correlations following the decay of "2"0"7Bi is done by using a Si(Li) semiconductor counter as L x-ray detector. Coincidence measurements at five different angles were made between the 570-keV #gamma# ray (gated in the movable counter) and the Ll x spectrum (displayed in a multichannel analyzer).

CERN Document Server

A self-organizing particle swarm is presented. It works in dissipative state by employing the small inertia weight, according to experimental analysis on a simplified model, which with fast convergence. Then by recognizing and replacing inactive particles according to the process deviation information of device parameters, the fluctuation is introduced so as to driving the irreversible evolution process with better fitness. The testing on benchmark functions and an application example for device optimization with designed fitness function indicates it improves the performance effectively.

International Nuclear Information System (INIS)

This study mainly concerns medical explorations by radioisotopes. Detectors with medical exams and applications are described. Ionisation chambers, semiconductor detectors and scintillation counters are also presented. Uses of radioisotopes in medicine in vivo and in vitro techniques are explained. Examples of scintiscanning are given like: angiography, nuclear cardiography and thyroid scintiscanning. The importance of the study is to present a panorama of nuclear medicine laboratories -at the time- in hospitals in Lebanon.

International Nuclear Information System (INIS)

X-ray scattering methods suitable for the investigation of the morphology and chemical composition of self-organized quantum dots and quantum wires are reviewed. Their application is demonstrated in experimental examples showing that a combination of small angle X-ray scattering with high-resolution X-ray diffraction can reveal both the shape and the chemical composition of the self-organized objects. (author)

International Nuclear Information System (INIS)

Elements Ti, Mn, Fe, Ni, Cu, Zn, Pb, Br, Rb and Sr were determined by the method of radionuclide X-ray fluorescence analysis with semiconductor detection in samples of Taraxacum officinale from various localities of Bratislava. The dependence of their content on the source and the degree of the air pollution was found out. (author).

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence method with a Si/Li semiconductor detector and "2"3"8Pu exciting source was used in the determination of Cr, Fe, Ni, Cu, and Zn content in industrial wastewaters. Simultaneously, the effects of the wastewaters on activated sludge biocenose were evaluated. (author) 6 refs.; 1 fig.; 1 tab.

International Nuclear Information System (INIS)

Radionuclide X-ray fluorescence method with Si/Li semiconductor detector and "2"3"8Pu exciting source was used for the determination of Cu, Ni, Zn and Pb in plant samples (Taraxacum officinale) from various localities near the highway D-61 Bratislava-Trnava (SR). (author) 2 refs.; 1 fig.; 1 tab.

Energy Technology Data Exchange (ETDEWEB)

Extensive research into the treatment and control of Volatile Organic Compounds (VOCs) from semiconductor industry manufacturing processes has identified the need for alternatives to existing combustion devices. Specifically, semiconductor manufacturing design is moving toward exploiting effective, small-scale, abatement control technologies for specific point-of-use (POU) waste streams associated with a particular component or manufacturing tool. The Silent Discharge Plasma (SDP) developed at Los Alamos National Laboratory is a nonthermal plasma technology created by a dielectric-ballasted electrical discharge. Influent gas-phase pollutants are destroyed in the reactor by the free radicals or electrons generated by the plasma. This paper examines the potential for SDP to be used in niche circumstances for POU control of VOC exhaust streams specific to the semiconductor industry. A sensitivity analysis is presented, showing ...

Science.gov (United States)

"Precision manufacture of ceramic parts with CNC machining capability for aerospace, lasers, semiconductors and other industries. Materials include alumina, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite and others. A.C.T. has seen the number of applications and demand for high-realiability ceramics (aluminum oxide, zirconia, glass, ferrites, silicon carbide, silicon nitride, sapphire, cordierite, mullite, etc...) increase continually within the aerospace, computer and the industrial markets."

International Nuclear Information System (INIS)

The Bragg-curve detector of the parallel plate ionization chamber type generates a signal that is a distorted replica of the original Bragg-curve. In result of this distortion, the signal peak height is not only a function of the atomic number of the heavy ion, as it is often stated, but also of the particle mass. This mass effect was studied with the aid of computer simulation, and it was found to be dependent on the Frisch grid to anode gap width and on the detector gas. The charge resolution of the detector is affected very significantly by this mass dependence of the signal peak height. Therefore, a careful selection of the detector gas and the grid to anode gap width is necessary, if good charge resolution over a wide range of heavy ions is required. (orig.).