International Nuclear Information System (INIS)

By using a variational Monte Carlo method, we examine an effective low-energy model for LaFeAsO derived from an ab initio downfolding scheme. We show that quantum and many-body fluctuations near the antiferromagnetic (AF) quantum critical point largely reduce the antiferromagnetic ordered moment. Our derived model not only quantitatively reproduces the small ordered moment in LaFeAsO, but also accounts for the diversity from LaFePO, BaFe_2As_2 to FeTe. Electron correlation is found to determine the observed material dependence. We also find that LaFeAsO is subject to large orbital fluctuations, sandwiched by the AF Mott insulator and weakly correlated metals. The orbital fluctuations and Dirac-cone dispersion hold keys for the diverse magnetic properties. (author)

Energy Technology Data Exchange (ETDEWEB)

Optical absorptance spectra of A-15 compounds were taken using a calorimetric technique in the range 0.2 eV to 4.0 eV. Thermomodulation spectra were taken on several A-15 sputtered films.

Energy Technology Data Exchange (ETDEWEB)

We consider the radiation of particles (electrons and positrons) undergoing planar channeling in a single crystal of small thickness L. We show that for Lapprox...pi..b/theta/sub L/, where b is the lattice constant and theta/sub L/ is the Lindhard angle, in addition to the principal maxima of spontaneous radiation of channeled particles in the spectrum there are additional interference maxima, and the positions of all maxima of the radiation intensity depend on L. We discuss the dependence of the intensity of radiation at various frequencies on the crystal thickness.

International Nuclear Information System (INIS)

YBa_2Cu_3O_7_-_x thick films have been deposited on silver sheets and MgO single crystals by spray pyrolysis. Film texture is related to film thickness and sintering temperature. The X-ray intensity ratio of the 005 peak to the 110 peak is higher for thin films deposited at the higher temperatures. However, elevated temperatures promote copper diffusion and second-phase formation in films deposited on silver. Films deposited on MgO can have larger grain sizes and are more oriented than those deposited on silver.

Energy Technology Data Exchange (ETDEWEB)

Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

Science.gov (United States)

... 10 TIN TELLURIDE Preparation of Tin Telluride Single Crystals ..... 12 ... TIN TELLURIDE Preparation of Tin Telluride Single Crystals ...

Energy Technology Data Exchange (ETDEWEB)

Ion Beam Induced Luminescence (IBIL) and Ion Beam Induced Charge Collection (IBICC) have been applied in the study of the luminescence emission efficiency and investigation of the homogeneity of the luminescence emission in phosphors. The IBIL imaging was performed by using sharply focused ion beams or broad/partially-focused ion beams. The luminescence emission homogeneity in samples was examined to reveal possible distributed crystal-defects that may lead to the inhomogeneity of the luminescence emission in samples.The purpose of the study is to search for suitable luminescent thin films that have high homogeneity of luminescence emission, large IBIL efficiency under heavy ion excitation, and can be placed as a thin layer on the top of microelectronic devices to be analyzed with Ion Photon Emission Microscopy (IPEM). The emission yield was found to be low for organic materials, due to saturation of the light output dependence on the energy ...

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Thin Pt, Pd, Pt/sub 2/Si, PtSi, Pd/sub 2/Si, Ni, Mo, W, Nb, Ti, V films deposited on Si single crystal were treated by using electron beam pulses of 60 ns duration in the 0.4-4 J/cm/sup 2/ energy density range. Irradiation of these structures produces at the same time many phases. Post-thermal annealing of the reacted layer induces the formation of a stable phase, the same obtained by only thermal treatment in a conventional furnace. A linear relationship between the energy density range and the lowest eutectic temperature of the compounds formed has been found. Further SEM observations seem to identify a liquid layer from which the phases are forming by subsequent fast cooling.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

Energy Technology Data Exchange (ETDEWEB)

This paper reports on superconductor-semiconductor-superconductor (S-N-S) weak-link junctions with the normal layer of Si or InSb thin films were prepared by using focused ion beam (FIB), and electrical properties were measured. Whereas InSb thin films on single crystals did not have an intrinsic mobility, S-N-S junction with InSb shows the characteristics of Josephson S-N-S junction. A 200nm-thick film of InSb deposited on MgO had a mobility of 83 cm{sup 2}.V {center dot} s and a carrier density of 6.5 {times} 10{sup 17} cm{sup {minus}3} at 4.2K. The coherence length {xi}{sub n} was computed to be 17 nm from these experimental data, and we obtained critical superconducting current Ic of 100 {mu} A for the S-N-S junction which had a line width of 10{mu} m and a channel length of 20 nm.

Energy Technology Data Exchange (ETDEWEB)

The production and characterisation of thin films made from molybdenum sulphide, molybdenum selenide, tungsten sulphide and tungsten selenide are described. The electronic properties of the thin films were examined by Hall measurements and by thermal sensors. For the MoSe[sub 2] films, the majority of the samples were n-conducting and p-conduction was only found for a few examples. All the other films (MoS[sub 2], WS[sub 2], WSe[sub 2]) were p-conducting. The electrical transport properties of the thin films are comparable to those of single crystals. With these thin films as absorber materials, it was possible for the first time to produce the polycrystalline solid n-ZnO/p-MoSe[sub 2], n-ZnO/WSe[sub 2], n-ZnO/WS[sub 2]- and n-ITO/WS[sub 2] solar cells. In spite of not yet optimized diode geometry (lateral build-up), a maximum short circuit current of I[sub SC] ...

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

... Abstract : Cadmium telluride single crystals were subjected to multiple-energy boron ion implants with total doses up to 1.5 x 10 sq cm. ...

International Nuclear Information System (INIS)

... parameters magnetic fields magnetic properties magnetization monocrystals

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a marker to study metal silicide formation. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. It was found that the metal is the diffusing species during Co_2Si, Pt_2Si, NiSi and PtSi formation, while silicon diffuses during CrSi_2, TiSi_2 and ZrSi_2 formation. Silicon was also found to be the diffusing species during second phase formation of CoSi from Co_2Si. However, in this case it was established that the silicon diffuses by a grain boundary and/or interstitial mechanism. Both the metal and silicon diffuse during Ni_2Si and Pd_2Si formation. In an attempt to interpret complex radioactivity profiles a computer program, simulating various diffusion mechanisms during both first and second phase silicide formation, was written. A numerical approach was used whereby silicide growth occurs in small increments and the concentration of ...

International Nuclear Information System (INIS)

The purpose of this work was to investigate the optical properties of several high T/sub c/ compounds in the form of sputtered films. The measurements are used toward this end: optical absorptance (using a calorimetric technique near 4.2K), which yields (after Kramers-Kronig analysis) the complex dielectric function, and thermoreflectance (which measures the change in reflectance in the optical range when a 1 to 10_0K temperature wave is applied), performed at two ambient temperatures (80 and 300_0K), yielding the differential dielectric function. The sputtered films included Nb"3Ge, Nb"3Al, V"3Ga and Nb"3Ir. It is noted that Nb"3Ir is not a high T/sub c/ superconductor. The thermoreflectance on the bulk samples V"3Si, V"3Ge and single crystal Cr"3Si were not performed because the samples were not in the form of thin films. The thermomodulation studies are correlated with the absorptance measurements in comparison to band ...

Energy Technology Data Exchange (ETDEWEB)

Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer ...

Science.gov (United States)

Cadmium telluride single crystals were subjected to multiple-energy boron ion implants with total doses up to 1.5 x 10 sq cm. Various diagnostic techniques were used to assess the structural and electronic properties of these crystals in their as-implante...

CERN Document Server

Experimental data are reported on the micro-irregularities of resistivity in longitudinal and transverse specimens of germanium 0.5 to 0.8 mm in thickness and 25 to 40 mm in width. These data are correlated with the conditions of growth of the crystals. (16 refs).

International Nuclear Information System (INIS)

The chemical properties of alloys in a given environment are to a large extent governed by the surface composition. Changes of the surface composition during passivation are important features in this respect. Previous studies of single crystal Ni-Mo alloys surfaces have been reported. The aim of this work was to obtain quantitative data, for the natural oxide and the passive films formed on Ni-6% Mo(100) and (110) alloys, using Rutherford backscattering spectroscopy and nuclear reaction analysis. (author).

Energy Technology Data Exchange (ETDEWEB)

Low cycle fatigue (LCF) of a fourth-generation single-crystal (SC) Ni-base superalloy TMS-138 was studied by comparison with a typical third-generation (TMS-75) and a second-generation (CMSX-4) Ni-base SC superalloys. TMS-138 exhibits improved LCF behaviour under a condition of the R ratio of 0 at temperatures of 1073 K and 1173 K. The addition of refractory elements resulted in a remarkable improvement of the LCF properties compared to those of the reference superalloys due to the different microstructure developed in TMS-138. (orig.)

Energy Technology Data Exchange (ETDEWEB)

White beam Laue micro-diffraction was performed on directionally solidified, single-crystal Mo pillars in the as-grown state, after focused ion beam (FIB) milling and after pre-straining. The Laue diffraction peaks from the as-grown pillars are very sharp and show no broadening, similar to those from single-crystal Si wafers. Significant broadening and streaking of the peaks occurred after FIB milling and pre-straining, indicative of the damage these treatments induce in the nearly perfect crystal structure of the directionally solidified Mo pillars.

International Nuclear Information System (INIS)

The present communication deals with the synthesis, single crystal growth and characterization of a new nonlinear optical material L-proline strontium chloride monohydrate (L-PSCM). Single crystals have been grown using the slow solvent evaporation technique. Single crystal XRD analysis confirmed that the crystal belongs to the orthorhombic structure with lattice parameter a=6.6966(3) A, b=12.4530(5) A, c=15.2432(5) A and space group P2_12_12_1. Presence of various functional groups in L-PSCM and protonation of the ions were confirmed by Fourier transform infrared spectroscopy (FT-IR) analysis. The melting point of the single crystal was found to be 126 "oC using DSC. Ultraviolet-visible spectral analyses showed that the crystal has low UV cut-off at 226 nm combined with very good transparency of 90% in a wide range. The ...

Energy Technology Data Exchange (ETDEWEB)

For several decades most of the efforts to develop new scintillator materials have concentrated on high-light-yield inorganic single-crystals while polycrystalline ceramic scintillators, since their inception in the early 1980 s, have received relatively little attention. Nevertheless, transparent ceramics offer a promising approach to the fabrication of relatively inexpensive scintillators via a simple mechanical compaction and annealing process that eliminates single-crystal growth. Until recently, commonly accepted concepts restricted the polycrystalline ceramic approach to materials exhibiting a cubic crystal structure. Here, we report our results on the development of two novel ceramic scintillators based on the non-cubic crystalline materials: Lu SiO:Ce (LSO:Ce) and LaBr:Ce. While no evidence for texturing has been found in their ceramic microstructures, our LSO:Ce ceramics exhibit a surprisingly high level of transparency/ translucency ...

International Nuclear Information System (INIS)

Single crystals of semi-organic L-histidine hydrobromide have been grown by slow evaporation technique from a mixture of L-histidine and hydrobromic acid in aqueous solution at ambient temperature. From high-resolution X-ray diffraction analysis, the crystalline perfection of the grown crystal has been studied. Single crystal X-ray diffraction analyses, Nuclear Magnetic Resonance spectral analysis, Thermo-Gravimetry (TG), Differential Thermal Analysis (DTA) and hardness test have been employed to characterize the as-grown crystals. The UV cutoff wavelength of the grown crystal is below 300 nm and has a wide transparency window, which is suitable for second harmonic generation of laser in the blue region. Nonlinear optical characteristics have been studied using Q switched Nd:YAG laser (#lambda#=1064 nm). The second harmonic generation conversion efficiency of the grown crystals confirms their ...

International Nuclear Information System (INIS)

LaPO4 single crystals lightly doped with Er3+, and codoped with Er3+ and Yb3+ have been grown by spontaneous nucleation in a lead phosphate flux. Absorption and luminescence spectra have been measured in the visible and near-IR regions and the excited state dynamics has been studied upon pulsed laser excitation. The obtained results have allowed the evaluation of the effective emission cross-sections around 1.5 ?m, that have been found to be similar to important oxide laser crystals doped with Er3+. Efficient visible upconversion has been observed upon excitation at 980 nm in the codoped crystals. This behaviour is attributed to Yb3+-Er3+ energy transfer processes.

International Nuclear Information System (INIS)

The energy levels scheme of octahedrally coordinated Ni2+ ion in single crystal, powder nano-single crystal, ceramics and glass-ceramics of MgGa2O4 host matrix, has been calculated in the exchange charge model of crystal field. The parameters of the crystal field acting on the Ni2+ ion are calculated from the crystal structure data, after optimization of the geometry of the system. The energy level schemes have been calculated by diagonalization of the crystal field Hamiltonian of this system. The obtained results were compared with experimental data; a good agreement were demonstrated, which confirm the validity of the model and used method.

Energy Technology Data Exchange (ETDEWEB)

We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

Energy Technology Data Exchange (ETDEWEB)

The theoretical treatment of the relation between the critical angle of planar channeling and the characteristics of crystal lattice defects is carried out. The predictions are made about some typical forms of the critical angle dependence on the mean-square static displacement produced by defects, and then these predictions are detailed for the cases of homogeneous disordering, spherical clusters of point defects and dislocation loops. Analytical results are supported by the exact computer calculations for the defects in the intermetallic A-15 compounds.

Energy Technology Data Exchange (ETDEWEB)

The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.

Energy Technology Data Exchange (ETDEWEB)

TiO{sub 2} is a vital material in several technologies including, photocatalysis, gas sensing, biomaterials and optical coatings. Among the several crystal structures of this oxide, rutile has the highest density and microhardness, the highest index of refraction and the highest temperature stability. The processing of dense polycrystalline materials often includes the addition of a liquid-forming phase at higher temperatures. This technique is known as liquid-phase sintering and has been studied extensively. Rutile boundaries containing an amorphous phase have been used to study boundary migration and grain-boundary grooving. Visible-light (VLM), scanning electron (SEM) and transmission electron microscopy (TEM) in addition to electron-backscatter diffraction (EBSD) and a focused-ion beam (FIB) tool were used to characterize boundary migration in rutile. EBSD analysis was carried out on a Philips XL30 FEG SEM equipped with a DigiView 1612 high-resolution, high-speed CCD camera. A 2.5 ...

Science.gov (United States)

We have investigated the nanotexture and crystallographic orientation of aragonite in a coral skeleton using synchrotron-based scanning transmission X-ray microscopy (STXM) and transmission electron microscopy (TEM). Polarization-dependent STXM imaging at 40-nm spatial resolution was used to obtain an orientation map of the c-axis of aragonite on a focused ion beam milled ultrathin section of a Porites coral. This imaging showed that one of the basic units of coral skeletons, referred to as the center of calcification (COC), consists of a cluster of 100-nm aragonite globules crystallographically aligned over several micrometers with a fan-like distribution and with the properties of single crystals at the mesoscale. The remainder of the skeleton consists of aragonite single-crystal fibers in crystallographic continuity with the nanoglobules comprising the COC. Our observation provides information on the nm-scale processes ...

Energy Technology Data Exchange (ETDEWEB)

Neutron scattering experiments on the mixed-valence (MV) compounds SmB{sub 6} are reported. The inelastic magnetic response of SmB{sub 6} at T = 2 K, measured on a double-isotope single crystal,displays a strongly damped peak at 35 meV corresponding to the inter multiplet transition of Sm{sup 2+}. At lower energies ( h.{omega} {approx_equal} 14 meV), a narrow magnetic excitation is observed, with remarkable scattering-vector and temperature dependences of its intensity. This novel feature is discussed in terms of recent theoretical works describing the formation of an anisotropic local bound state in semiconducting MV materials. If the average samarium valence is decreased by substituting La for Sm, a peak is found to appear at high energies. The elastic magnetic form factor of SmB{sub 6} was determined using polarised neutrons and no significant difference is observed in its Q-dependence with respect to that of pure divalent samarium. This ...

Energy Technology Data Exchange (ETDEWEB)

The magnetic properties of a single crystal of SmNiSn with the orthorhombic {epsilon}-TiNiSi-type crystal structure have been investigated by magnetic susceptibility, magnetization and electrical resistivity measurements from 1.5 K to room temperature. Two anomalies have been found in the magnetic susceptibility, indicating an antiferromagnetic phase transition at T{sub N}=9.4 K and a second transition at 4.4 K. A large magnetic anisotropy has been found at low temperatures in the temperature and field dependencies of magnetic susceptibility and magnetization. Below 80 K, the easy axis of the magnetization is the c-axis. At T=2.0 K, the c-axis magnetization curve exhibits metamagnetic-like behavior at H{sub c}=42 kOe and reaches 0.54 emu/g at H=55 kOe, whereas for the a- and b-axis the magnetization is linear and smaller. The paramagnetic susceptibilities do not follow the Curie-Weiss law suggesting a large van Vleck contribution of the Sm ...

British Library Electronic Table of Contents (United Kingdom)

Single crystal tungsten oxide (WO3) nanoparticles were prepared via a microwave-assisted method. Electrochemical activity for hydrogen evolution reaction (HER) on WO3 supported on carbon black (WO3/C) electrocatalyst was first studied in acid solution (0.5 M H2SO4) and alkaline solution (1.0 M KOH) at room temperature. The overall experimental results revealed that the electrocatalytic activity for HER on WO3/C is one order magnitude higher than those obtained with carbon black in 0.5 M H2SO4 and is six times than in the case of carbon black in 1.0 M KOH. These results demonstrated that WO3 could enhance the electrocatalytic activity for hydrogen evolution reaction in acid solution (0.5 M H2SO4) and alkaline solution (1.0 M KOH). On the other hand, the kinetic reaction mechanisms were disc...

Energy Technology Data Exchange (ETDEWEB)

Iron undergoes a polymorphic phase transformation from alpha phase (bcc) to the epsilon phase (hcp) when compressed to stresses exceeding 13 CPa. Bccause the epsilon phase is denser than the alpha phase, a single shock wave is unstable and breaks up into an elastic wave, a plastic wave, and a phase transition wave. Examination of this structured wave coupled with various phase transformation models has been used to indirectly examine the transition kinetics. Recently, multimillion atom simulations (molecular dynamics) have been used to examine the shock-induced transition in single crystal iron illustrating an orientation dependence of the transition stress, mechanisms, and kinetics. The objective of the current work was to perform plate impact experiments to examine the shock-response of polycrystalline and single crystal iron with nanosecond resolution for impact stresses spanning the {alpha} - ...

British Library Electronic Table of Contents (United Kingdom)

Crystalline bis(O,O'-di-sec-butyldithiophosphato)platinum(II) was prepared and studied by means of 13C, 31P CP/MAS NMR spectroscopy and single-crystal X-ray diffraction. The unit cell of the platinum(II) compound is comprised of one centrosymmetric mononuclear molecule [Pt{S2P(O-sec-C4H9)2}2], in which the dithiophosphate groups display structural equivalence in both 31P NMR and XRD data. A pair of the dithiophosphate ligands exhibit the same S,S'-bidentate chelating structural function and form two planar four-membered chelate rings, [PtS2P], in this molecule. The planar configuration of the [PtS4] chromophore in structure 1 is governed by the dsp2-hybrid state of platinum(II). The structural states of the dithiophosphate groups in two different samples of complex 1 (one crystallised from...

Energy Technology Data Exchange (ETDEWEB)

A single-crystal x-ray study under pressure reveals a phase transition from an in-plane 2x2 commensurate potassium superstructure to a new ..sqrt..3x..sqrt..3 commensurate superstructure. This is the first such transition to be observed; it is related to the recently discovered staging transition of KC/sub 8/ under pressure. In addition this staging transition was observed to occur more slowly and at much lower pressures than in the reported neutron-scattering experiment on highly oriented pyrolytic graphite samples. 13 references, 2 figures.

International Nuclear Information System (INIS)

Tl(InS_2)_1_-_x(FeSe_2)_x single crystals (where x=0; 0.001; 0.005; 0.01 and 0.015) were grown by the Bridgman-Stockbarger method. Obtained single crystals were crystallized in monoclinic structure. The present paper deals with experimental results relative to X-ray dosimetric characteristics of the Tl(InS_2)_1_-_x(FeSe_2)_x solid solutions at 300 K. Installation URS-55a was the source of radiation. X-ray radiation dose (E) falling on the crystals is measured by the crystalline X-ray dosimeter DRGZ-02. The value of X-ray conductivity coefficient K_#sigma# characterising X-ray sensitivity is defined as K_#sigma#= (#sigma#_E-#sigma#_0)/E#sigma#_0. where #sigma#_E is conductivity under the effect of X-ray radiation by intensity E, #sigma#_0 is conductivity in the lack of radiation. Comparing X-ray dosimetric characteristics of TlInS_2 and Tl(InS_2)_1_-_x(FeSe_2)_x crystals notes that because of partial ...

International Nuclear Information System (INIS)

The behavior of the superconducting transition temperature T/sub c/ of single-crystal and polycrystalline V_3Si was investigated as a function of low-fluence neutron irradiation. It is found that the initial degradation of T/sub c/ is sample-dependent, some specimens showing no degradation in T/sub c/ up to a fluence of 2 x 10"1"8 n/cm"2. This and many other earlier observations on low-fluence behavior are explained in terms of a recently proposed model of radiation damage in A-15 compounds.

Energy Technology Data Exchange (ETDEWEB)

The Oak Ridge National Laboratory (ORNL) is a multiprogram, multipurpose laboratory that conducts research in the physical, chemical, and life sciences; in fusion, fission, and fossil energy; and in energy conservation and other energy-related technologies. This review outlines some current endeavors of the lab. A state of the laboratory presentation is given by director, Alvin Trivelpiece. Research of single crystals for welding is described. The Science Alliance, a partnership between ORNL and the University of Tennessee, is chronicled. And several incites into distinguished personnel at the laboratory are given. (GHH)

Energy Technology Data Exchange (ETDEWEB)

In the early days of Moessbauer spectroscopy, it was demonstrated that coherent scattering of photons emitted by a Moessbauer source can be observed. In spite of the fact that scattering experiments could give information not accessible by the absorption method, they are not widely used. The reasons for this are, on the one hand, experimental difficulties, and on the other hand, the form of the samples, which should be large single crystals in most cases. In this work, we present a Moessbauer diffraction measurement on polycrystalline bcc iron where these problems have been overcome. We demonstrate that using the kinematical theory of gamma-ray diffraction, useful information on the relative orientation of the crystallographic axis to the hyperfine field directions can be subtracted. (orig.)

International Nuclear Information System (INIS)

Single-crystalline CeRh_2Si_2 and CePd_2Si_2 were grown by the Czochralsky pulling method and the temperature dependence of magnetic susceptibility was investigated. The crystalline electric field (CEF) states in each compound were determined by considering the tetragonal CEF Hamiltonian with mean-field approximation. Interactions between Ce"3"+ ion and the surrounding ligands in CeRh_2Si_2 turned out to be strong and highly anisotropic in comparison to CePd_2Si_2. (orig.)

Energy Technology Data Exchange (ETDEWEB)

An investigation of the solidification behavior was carried out on the directionally solidified single crystal superalloy CMSX 6. The relationship between structure morphology and the process parameters has been experimentally determined and illustrated in a solidification diagram. The metallographic analyses of transverse sections within the solidification interval yield the sequence of phase formation and the evolution of solid fraction. The solidification process and the corresponding structure have been discussed in detail. (orig.)

Energy Technology Data Exchange (ETDEWEB)

LaAlO{sub 3} and CeO{sub 2} films have been successfully grown using sol-gel precursors. LaAlO{sub 3} precursor solution has been prepared from a metal alkoxide route and spun-cast on a SrTiO{sub 3} (100) single crystal to yield an epitaxial film following pyrolysis at 800{degrees}C in a rapid thermal annealer. A CeO{sub 2} precursor solution has been made using both an aqueous and an alkoxide route.

International Nuclear Information System (INIS)

We demonstrate the possibility to fabricate arrays of pores oriented perpendicular and parallel to the top surface of the ZnSe nanotemplate. The control of material conductivity allows one to produce porous ZnSe samples with the mean pore diameter and characteristic skeleton wall thickness from several hundreds of nanometers to about 15 nm. In addition, electrochemical treatment of ZnSe single crystals using photoresist masks allows one to prepare buried porous structures with pores directed parallel to the top template surface, which is especially important for photonic applications.

International Nuclear Information System (INIS)

Ab initio total-energy calculations, based on the exact muffin-tin orbital method, are used to determine the elastic properties of Pd1-xAgx random alloys in the face-centered-cubic crystallographic phase. The compositional disorder is treated within the coherent-potential approximation. The single crystal and polycrystalline elastic constants and the Debye temperature are calculated for the whole range of concentration, 0?x?1. It is shown that the variation in the elastic parameters of Pd-Ag alloys with chemical composition strongly deviates from a simple linear or parabolic trend. The complex electronic origin of these anomalies is demonstrated.

Energy Technology Data Exchange (ETDEWEB)

Single crystals of Li{sub 1.8}(In{sub 0.55}Zr{sub 0.45}){sub 2}(PO{sub 4}){sub 3} and Li{sub 3}(In{sub 1-x}Sc{sub x}){sub 2}(PO{sub 4}){sub 3} (x=0.67,0.73) were grown by a flux method. The crystal structure of Li{sub 1.8}(In{sub 0.55}Zr{sub 0.45}){sub 2}(PO{sub 4}){sub 3} was found to be similar to that of the high temperature {gamma}-phase of Li{sub 3}Sc{sub 2}(PO{sub 4}){sub 3}. However, Li ions were located on only one site among three available sites. On the other hand, those of Li{sub 3}In{sub 2}(PO{sub 4}){sub 3}-Li{sub 3}Sc{sub 2}(PO{sub 4}){sub 3} solid solutions were found to be similar to that of the low temperature {alpha}-phase of Li{sub 3}Sc{sub 2}(PO{sub 4}){sub 3}. The ionic conductivity of Li{sub 1.8}(In{sub 0.55}Sc{sub 0.45}){sub 2}(PO{sub 4}){sub 3} was measured along with the directions perpendicular and parallel to the a-axis. A relatively large anisotropic conductivity was observed in the single ...

Energy Technology Data Exchange (ETDEWEB)

Abstract not provided

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Science.gov (United States)

... Abstract : MANY THIN FILM ACOUSTO-OPTIC INTERACTION EXPERIMENTS FOR ... CONVERTERS, AND FOR FAST SWITCHES HAVE BEEN ...

International Nuclear Information System (INIS)

An attempt has been made to grow L-tartaric acid nicotinamide (LTN); a complex of tartaric acid, by employing a modified unidirectional method. The crystalline structure and quality are investigated by single crystal XRD and rocking curve studies. The linear and nonlinear optical properties are studied by UV-vis-NIR spectral analysis, SHG test, phase matching and laser induced damage threshold measurement. For comparison, parallel growth of the crystal was carried out by conventional method and the properties of the LTN samples grown by the conventional and unidirectional methods are investigated. The mechanical, photoconductivity and dielectric behavior of LTN crystals are also investigated.

Science.gov (United States)

Cadmium telluride single crystals were grown heavily doped with chloride by the THM method. The resulting crystals were n-type with free carrier concentrations of the order of 10('12)/cm at room temperature. Hall effect studies revealed room temperature mobilities between 30 and 350 cm('2)/v-sec and resistivites between 2 x 10('3) and 10('4) ohm-cm. Studies were made of the gamma and alpha counting characteristics of these crystals with metal, metal-semiconductor, and metal-insulator electrodes. It was found that the MIS and MSS structures resulted in significant improvement over the MS structures in counting, signal-to-noise and energy resolution.

International Nuclear Information System (INIS)

We have investigated the superconducting and metallurgical properties of the ternary compounds RPd_2Si_2 and RRh_2Si_2 with R = Y, La, and Lu. All RPd_2Si_2 compounds and LaRh_2Si_2 were found to be type-I superconductors below 1 K. A detailed metallurgical analysis shows that segregation of second phases can easily mask the intrinsic (stoichiometric ratio 1:2:2) intermetallic-compound properties. Two sample-preparation techniques, viz., single crystals and off-stoichiometry, were utilized to establish where bulk superconductivity occurs. The type-I behavior of these compounds is explained with an analogous model as is used for the heavy-fermion superconductors CeCu_2Si_2 and URu_2Si_2.

Energy Technology Data Exchange (ETDEWEB)

This paper attempts to explain the peculiarities of the radial-distribution function of metal glasses without involving ideas of the amorphous structure. On a computer, the radial atomic density for a spherical eutectic single crystal of the composition Fe/sub 84/C/sub 16/ of radius 15 A formed by alternating small crystals of e-Fe and Fe/sub 3/C of cubic form with the edge of the cube ca 10 A. For the sake of clarity, the diagram of such a quasisingle crystal is shown and has been given a cubic boundary. The change in the relationship between the heights of the subpeaks of the second maximum of the radial distribution function of atoms in the Fe-B glasses with a change in the concentration of boron can be explained by the change in the space group of the Fe/sub 3/B metastable boride which is formed in this system.

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The electrical resistivity, Hall effect, and magnetic susceptibility of single-crystal UPd[sub 2]Si[sub 2] have been studied between 4.2 and 300 K. A large anisotropy was observed in both the magnetic and transport properties. There is a quadratic temperature dependence of the resistivity for a range of temperatures between 4.2 and 80 K. At higher temperatures, the resistivity indicates a Kondo-type behavior. The behavior of these quantities is accounted for by the magnetic phase transitions at 108 and 136 K reported from neutron-scattering studies. At high temperatures, the magnetic susceptibility of UPd[sub 2]Si[sub 2] is Curie-Wiess-like along the [ital c] axis. The temperature dependence of the Hall coefficient above 108 K is accounted for by a theoretical model invoking skew scattering of conduction electrons by localized magnetic moments.

International Nuclear Information System (INIS)

Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)

Energy Technology Data Exchange (ETDEWEB)

Magnetization, specific heat, and electrical resistivity measurements were made on single crystals of the filled skutterudite compound PrOs{sub 4}As{sub 12}. Specific heat measurements indicate an electronic specific heat coefficient {gamma} {approx} 50-200 mJ/mol K{sup 2} at temperatures 10 K {le} T {le} 18 K, and {approx} 1 J/mol K{sup 2} for t {le} 1.6 K. Magnetization, specific heat, and electrical resistivity measurements reveal the presence of two, or possibly three, ordered phases at temperatures below {approx} 2.3 K and in fields below {approx} 3 T. The low temperature phase displays antiferromagnetic characteristics, while the nature of the ordering in the other phase(s) has yet to be determined.

International Nuclear Information System (INIS)

Measurements are made on the principal magnetic susceptibilities and anisotropies of praseodymium selenate octahydrate single crystals in the temperature range 90 to 300 K. Although the effective magnetic moment is close to the free ion value, the anisotropy is quite high at room temperature. A least sequares fit of the Curie-Weiss law to the observed average susceptibility yields -36.5 K as the paramagnetic Curie temperature. An analysis of the results with a crystal field (CF) of D_4 symmetry, explains the observed results quite well. The CF and the spin-orbit interaction matrix is block diagonalized in the complete 33 dimensional basis of the "3H term in order to obtain the Stark energies and their eigenstates. Intermediate coupling effects are also considered. The ground state being a singlet, the g-factors are absent. Some predictions on the electronic heat capacity and the electronic quadrupole splitting are made in the light of the ...

Science.gov (United States)

Counting characteristics of X-ray detectors fabricated from indium-doped, gallium-doped, and chlorine-doped CdTe have been investigated. The detectors fabricated from indium-doped and gallium-doped crystals showed radiation-induced polarization, namely, a progressive decrease of count rate with an increase of photon fluence in the high-photon-fluence region, while the detectors fabricated from chlorine-doped crystals did not. Results from current-voltage characteristics of the detectors indicated that the different counting characteristics of these detectors originated from the difference in internal electric fields in each detector.

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Midway Labs currently produces a 335x concentrator module that has reached as high as 19{percent} active area efficiency in production. The current production module uses the single crystal silicon back contact SunPower cell. The National Renewable Energy Lab has developed a multi junction cell using GalnP/GaAs technologies. The high efficiency ({gt}30{percent}) and high cell voltage offer an opportunity for Midway Labs to develop a tracking concentrator module that will provide 24 volts in the 140 to 160 watt range. This voltage and wattage range is applicable to a range of small scale water pumping applications that make up the bulk of water pumping solar panel sales. {copyright} {ital 1997 American Institute of Physics.}

Energy Technology Data Exchange (ETDEWEB)

Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the ``polymorphs`` of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes ``worm holes`` in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100{degrees}C lock in the mechanical twins.

International Nuclear Information System (INIS)

Nanoscale islands of Cu_2O have been synthesized on single-crystal SrTiO_3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (MBE). Island growth location has been controlled by using an ex situ Ga"+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex situ atomic force microscopy study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.

International Nuclear Information System (INIS)

The feasibility of continuous production of gallium arsenide ribbon single crystals, by passage of a molten zone through boron-oxide encapsulated GaAs feedstock, is being investigated. Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3-encapsulated feed-stock, confined by a quartz cover plate. Failure to remove the encapsulant above its glass transition temperature, however, resulted in cracking of the ribbons on cooling to room temperature. In order to study the crucial zone melting step in isolation from the encapsulation steps of the continuous process, a constrained-zone melting apparatus has been constructed in which the boron oxide serves only as a sealant to suppress arsenic vaporization. Large grained polycrystalline samples have been produced with this apparatus.

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Dose dependences of conductivity at a temperature of 78 K for InSb and InAs single crystals under reactor fast neutron, 50 MeV proton and 80 MeV alpha particle irradiation up to fluence of 10{sup 17} cm{sup -2} are considered. Special attention is given to non-trivial, but little known semi-conductor characteristics in terms of {sigma}(F) dependence at large fluences, and also to the versatility of such dependence for all semiconductors. The behaviour of semiconductor materials conductivity dependence on fluence presented here may be used for semiconductor dosemeters characterisitic variation forecasting under large fluence measurements and in radiation emergency dosimetry. (author).

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The energy dispersive beamline X6A at the National Synchrotron Light Source employs a curved crystal monochromator (polychromator) which focuses a range ([similar to]1 keV) of x-ray energies into a narrow (100--120 [mu]m) line image. Although this beamline was constructed primarily for time-dependent EXAFS experiments, we have begun to explore the use of this instrument for energy dispersive diffraction experiments with different types of sample including macromolecular crystals. The tunability ([ital E]=6.5 to 21 keV) and flexibility ([Delta][ital E]=100--1000 eV) of the instrument makes the beamline ideal as a test bed for the application of polychromatic single-crystal diffraction techniques to different chemical or biological materials.

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To study the defect creation induced by electronic processes in refractory oxides, MgO single crystals were irradiated with high energy tin, uranium and lead ions. Optical absorption measurements showed that F-type centers (oxygen vacancies with trapped electrons) were created during irradiation. The total number of centers per unit area of bombarded sample increases linearly with irradiating fluence. The main part of the point defects was found to arise from electronic processes. The concentration of F-type centers induced by ionization increases with the electronic energy losses. Assuming a saturation of point defect concentration at high fluences, F-type center creation cross sections could be estimated. The influence of irradiation temperature and of the velocity of the bombarding ions are discussed.

International Nuclear Information System (INIS)

The magnetic scattering spectra of RAgSb_2 (R = Ho, Er, Tm) intermetallic compounds are measured and their crystal electric field parameters are determined using inelastic neutron scattering. It is revealed that the ground state is a nonmagnetic singlet for the HoAgSb_2 compound, a Kramers doublet with a strongly anisotropic g factor for the ErAgSb_2 compound, and a quasi-doublet (random doublet) characterized by an extremely anisotropic g factor for the TmAgSb_2 compound. The exchange interaction is estimated in the molecular field approximation. The magnetic properties of the RAgSb_2 compounds are analyzed in terms of the energy level schemes and eigenfunctions determined in this study. The calculated anisotropic magnetic susceptibilities for all compounds are in good agreement with the experimental data obtained for single crystals.

Energy Technology Data Exchange (ETDEWEB)

The final report for a Laboratory Directed Research and Development project entitled, ``Capturing Recrystallization of Metals in a Multiscale Materials Model'' is presented. In this project, deformation and recrystallization processes have been followed experimentally and theoretically in order to incorporate essential mechanisms from the defect (dislocation) and grain size length scales. A nonlinear rotational gradient theory has been developed which enables the incorporation of microstructural parameters. The evolution of these parameters during deformation and recrystallization has been characterized qualitatively and quantitatively, applying various electron optic techniques ranging over several length scales. The theoretical and experimental framework developed is general. It has been exemplified by an application to recrystallization in single crystals and bicrystals of aluminum. The recrystallization process has been ...

British Library Electronic Table of Contents (United Kingdom)

A new strontium metal-organic framework, [Sr2(BTEC)(H2O)4] 2H2O (1) (H4BTEC=benzene-1,2,4,5-tetracarboxylic acid), has been successfully synthesized by mixing the starting reagents. The single-crystal structure analysis showed that compound 1 displayed three-dimensional structures containing inorganic motifs with two-dimensional layers pillar-connected through organic linkers and forming water-coordinated neutral framework. Further studies revealed that compound 1 was insoluble in water and that it emitted strong luminescence at approximately 437nm after dehydration.

International Nuclear Information System (INIS)

The local Yb3+ magnetic susceptibility tensor was recently measured in the frustrated pyrochlore compound Yb2Ti2O7 by means of in-field polarized neutron scattering in a single crystal. A very anisotropic effective exchange tensor was derived for the Yb3+ ion. Using this result, we reinterpret here the data for the powder susceptibility in Yb2Ti2O7. We show that, in the case of a well-isolated Kramers doublet with anisotropic g and exchange tensors, the inverse susceptibility for a powder sample does not strictly obey a Curie-Weiss law at low temperature. We discuss the consequences regarding the paramagnetic Curie temperature, usually taken as a measure of the exchange/dipolar interaction, and the exotic 'slow fluctuation' ground state of Yb2Ti2O7. (fast track communication)

International Nuclear Information System (INIS)

Y2Te4O11:Eu3+ and Y2Te5O13:Eu3+ single crystals in sub-millimeter scale were synthesized from the binary oxides (Y2O3, Eu2O3 and TeO2) using CsCl as fluxing agent. Crystallographic structures of the undoped yttrium oxotellurates(IV) Y2Te4O11 and Y2Te5O13 have been determined and refined from single-crystal X-ray diffraction data. In Y2Te4O11, a layered structure is present where the reticulated sheets consisting of edge-sharing [YO8]13- polyhedra are interconnected by the oxotellurate(IV) units, whereas in Y2Te5O13 only double chains of condensed yttrium-oxygen polyhedra with coordination numbers of 7 and 8 are left, now linked in two crystallographic directions by the oxotellurate(IV) entities. The Eu3+ luminescence spectra and the decay time from different energy levels of the doped compounds were investigated and all detected emission levels were identified. Luminescence properties of the Eu3+ cations have been ...

Energy Technology Data Exchange (ETDEWEB)

We summarize the results of point-contact Andreev-reflection (PCAR) spectroscopy in MgB{sub 2} doped by chemical substitutions, either magnetic (Mn) or non-magnetic (Al,C), obtained by us and by other groups in the last four years. Despite the variety of samples used (crystals and polycrystals of various origin) and some minor differences in the experimental techniques, these measurements have directly provided a complete and consistent picture of the effects of chemical substitutions on the gaps of MgB{sub 2} shedding light on other relevant parameters (scattering rates, DOSs) affected by doping. In Al-doped crystals and polycrystals, the gap amplitudes {delta}{sub {sigma}} and {delta}{sub {pi}} - obtained through a two-band Blonder-Tinkham-Klapwijk (BTK) fit of the Andreev-reflection conductance curves - decrease on increasing the Al content x (i.e. on decreasing the critical temperature of the contacts T{sub c}{sup A}), but remain clearly distinct with no evidence of gap merging ...

Energy Technology Data Exchange (ETDEWEB)

Flux-grown ScPO{sub 4} single crystals exhibit a number of luminescence bands in their x-ray-excited luminescence spectra - including sharp lines arising from rare-earth elements plus a number of broad bands at 5.6 cV, 4.4 eV, and 3 eV. The band at 5.6 eV was attributed to a self-trapped exciton (STE) [l], and it could be excited at 7 eV and higher energies. This luminescence is strongly polarized (P = 70 %) along the optical axes of the crystal and exhibits a kinetic decay time constant that varies from several ns at room temperature to {approximately}10 {micro}s at 60 K and up to {approximately}1 ms at 10 K. It is assumed that the STE is localized on the SC ions. The band at 3 eV can be excited in the range of the ScPO{sub 4} crystal transparency (decay time = 3 to 4 {micro}s.) This band is attributed to a lead impurity that creates different luminescence centers. At high temperatures, the band at 4.4 eV is dominant in the x-ray-excited TSL ...

Energy Technology Data Exchange (ETDEWEB)

The compositions of passive films formed on Fe-17Fr-13Ni (at. %) and Fe-18.5Cr-14Ni-1.5Mo (100) single crystals have been determined and the structure of the alloy under the film has been investigated. The alloys were passivated in 0.05M H{sub 2}SO{sub 4} at 250 mV/SHE for 30 min. The oxygen content was measured by nuclear microanalysis using the {sup 16}O(d,p) {sup 17}O* reaction. The oxygen content in the passive film is similar for the two alloys and equal to (12{plus minus}2) 10{sup 15} O/cm{sup 2}. The cationic compositions of the passive films have been determined by {sup 4}He channeling at two incident beam energies: 0.8 and 2.0 MeV. For the two alloys studied, a total cation content of (5{plus minus}2)10{sup 15} at/cm{sup 2} is found in the passive films. The corresponding thickness is about 12 A. There is an excess of oxygen, which can be attributed to the presence of hydroxyls and sulfate. A strong chromium enrichment is found in the ...

Energy Technology Data Exchange (ETDEWEB)

The structure of hydroxylated oxide films (passive films) formed on Cr(110) in 0.5 M H{sub 2}SO{sub 4} at +0.35, +0.55, and +0.75 V/SHE has been investigated by in situ scanning tunneling microscopy (STM). Cathodic reduction pretreatments at {minus}0.54, {minus}0.64, and {minus}0.74 V/SHE destroy the well-defined topography of the single-crystal electrode and they have been excluded from the passivation procedure. Two different passive film structures have been observed, depending on the potential and time of passivation. At low potential (+0.35 V/SHE), the passive film, consisting mostly of chromium hydroxide, has a noncrystalline and granular structure whose roughness suggests local variations of thickness of ca. {+-} 0.5 nm. A similar structure is observed at higher potential (+0.55 V/SHE), but only for a short polarization time. For longer polarization at 0.55 V/SHE, and at higher potentials (+0.75 V/SHE), a crystalline structure is formed; the higher the ...

Energy Technology Data Exchange (ETDEWEB)

Single crystals of trigonal Cr{sub 2}Te{sub 3}, monoclinic Cr{sub 5}Te{sub 8}, and trigonal Cr{sub 5}Te{sub 8} were prepared and the single crystal structures were determined. The structures are related to the NiAs structure type by successive removal of Cr in every second metal atom layer parallel to the c axis. The strong relationship between the structures is evidenced by their very similar X-ray powder patterns. In trigonal Cr{sub 2}Te{sub 3} excess Cr occupies only one of the two possible sites. In monoclinic Cr{sub 5}Te{sub 8} the Cr atoms occupy four different crystallographic sites. The resulting ordering of the vacancies is significantly different from the hitherto reported crystal structures of transition metal chalcogenides M{sub 5}X{sub 8}. A slight increase of the tellurium content leads to an order-disorder transition from the monoclinic to a trigonal phase. The Cr atoms are located on ...

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The National Institute of Materials Science (NIMS) has utilized the in-house alloy design program to develop a 5{sup th} generation Ni-base single crystal superalloy, TMS-196 with superior high temperature creep, thermo mechanical fatigue (TMF) and oxidation resistance by incorporating further ruthenium (Ru) and chromium (Cr) content over the compositions of 4{sup th} generation superalloys. With Ru additions in advanced superalloys to enhance phase stability, higher content of refractory elements can be accommodated to provide further strengthening; the associated oxidation resistance can be improved by the increase in Cr additions. In present article, TMS-196 has been subjected to cyclic/isothermal oxidation tests at 1100 C and 900 C, creep at conditions between 800 C{proportional_to}1100 C/137MPa{proportional_to}735MPa and TMF cycles. Preliminary studies indicate that the surface of oxidized TMS-196 can exhibit continuous alumina layer ...

Science.gov (United States)

... After strip- ping off the chloroform, the dibromo ethyl (EDBEB) compounds are separated from the m-BDBEB using a thin film evaporator. ...

Science.gov (United States)

Sputtering of glass coatings on cadmium sulfide thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

1. In order to carry out isothermic crystal growth experiments of YBCO the 123 primary crystallization field was determined by means of phase diagram investigations and crystal growth experiments at different oxygen partial pressure. 2. YBCO single crystals of high crystallographic perfection were grown and conclusions on the flux pinning mechanism were drawn. 3. By means of Liquid Phase Epitaxy (LPE) single crystalline (Tc{approx}90 K; {Delta}T{<=}0.5 K) c- and a,b- YBCO fils have been prepared on NdGaO{sub 3} and LaGaO{sub 3} substrates. The films were characterized structurally and magnetically. 4. Our fist melt textured YBCO ``single crystals`` possess intracrystalline critical current densities >10{sup 4} A/cm{sup 2} at B{<=}2T. The irreversibility inductions are {<=}6 T at 77 K. A simple demonstrator was constructed together with the IFW Dresden and a growth model was developed. 5. ...

International Nuclear Information System (INIS)

The crystal structure of the compound Sm_4Pd_4Si_3 was determined by the single-crystal method (KM-4 automatic diffractometer, Mo K#alpha# radiation). Sm_4Pd_4Si_3 has the monoclinic Nd_4Rh_4Ge_3 type structure: space group C2/c, mC44 (No. 15), a=20.693(6), b=5.584(1), c=7.699(2) A, #beta#=109.48(3) , V=838 A"3, Z=4, #mu#=36.23 mm"-"1, R_F=0.0537, R_W=0.0435 for 1652 unique reflections. The coordination numbers of samarium atoms are 17 and 18. For palladium and silicon atoms icosahedra and trigonal prisms with additional atoms are typical as coordination polyhedra. The structure of Sm_4Pd_4Si_3 is composed of fragments of the YPd_2Si and Y_3Rh_2Si_2 structure in a ratio 1:1. (orig.).

British Library Electronic Table of Contents (United Kingdom)

The Schiff base ligand, 4-isopropylbenzaldehyde[N-(3-oxo-3,4-dihydro-2-quinoxalinyl)hydrazone] (Ipbh), the 1:1 condensation product of 4-isopropylbenzaldehyde and 2-hydroxy-3-hydrazinoquinoxiline, has been synthesized and characterized by X-ray crystallography. A series of complexes of Ipbh with Nickel(II), viz., [Ni(Ipbh)2]Cl2 (1), [Ni(Ipbh)2]Br2 (2), [Ni(Ipbh)2]I2 (3), [Ni(Ipbh)2(CH3OH)2](NO3)2(CH3OH)2 (4) and [Ni(Ipbh)2ClO4]ClO4 (5) have been synthesized. All the complexes were characterized by elemental analysis, molar conductivity, CHN analysis, spectroscopic studies, magnetic susceptibility measurements and TG/DTA methods. The solid-state structure of the complex 4 was established by single crystal X-ray crystallography. In all the complexes, Ipbh acts as a bidentate NO chelating age...

British Library Electronic Table of Contents (United Kingdom)

Schiff-base condensation of a equimolar proportion of diacetyl-monoxime monohydrazone and 1-methylimidazole-2-carboxaldehyde in methanol gives rise to the imidazole azine, 3-(1-methylimidazol-2-yl)methylenehydrazonobutan-2-one oxime(HL). Reaction of 1:1 stoichiometric proportion of HL with copper(II)perchlorate hexahydrate in methanol yields a dimeric oximato bridged copper compound, [Cu2L2(H2O)2](ClO4)2 (1). The compound is characterized by C, H and N analyses, FT-IR, ESI?MS, conductivity measurement, UV?Vis spectra and X-ray single crystal diffraction. The title compound (1) crystallizes in the monoclinic space group P21/c with a?=?6.8533 (8), b?=?18.413 (2), c?=?11.7399 (14) ?, ??=?93.685 (2)?, V?=?1478.4 (3) ?3 and Z?=?2. The geometry around each copper center is distorted square pyram...

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Three aspects of the research project Surface physics with cold and ultracold neutron reflectometry'' were stressed during the present first year: (1) Setup of the reflectometer facility at the research reactor of the Rhode Island Nuclear Science Center. The installation provides a narrow pencil beam'' analyzed by time of flight using a chopper system. Following beam characterization and a test measurement of the total cross section of copper single crystal first reflectivity measurements are currently performed using a supermirror. (2) Design stud for the ultracold neutron imaging system, with involvement of the relevant industry. Bids are available for several components indicating that it will be very difficult to build the entire system unless further funds become available. (3) Analysis of features of neutron reflection from surfaces with special emphasis on the effect of surface roughness both on the ...

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron diffraction patterns verified that bulk porous silicon is still a ...

British Library Electronic Table of Contents (United Kingdom)

Potassium dichlorido(l-prolinato)platinate(II), K[PtCl"2(l-pro"?"H)] (1), and chlorido(dimethyl sulfoxide)(l-prolinato)platinum(II), [PtCl(l-pro"?"H)(dmso)] (2), were synthesized by ligand substitution reactions. Both complexes were characterized by ^1H, ^1^3C, and ^1^9^5Pt NMR spectroscopy, elemental analysis, and HR-ESI-MS. The molecular structures of 1 and 2 were determined by single crystal X-ray diffraction, proving bidentate coordinated l-prolinato ligand and SP-4-4 configuration of 2a. With the help of DFT calculations stability of possible isomers of 1 and 2 was studied. A considerable difference in the in vitro cytotoxicity of 1 versus 2a (exchange of one chlorido ligand by dmso) against four human cancer cell lines was found.

Energy Technology Data Exchange (ETDEWEB)

When a highly collimated beam of particles is aimed along the atomic rows of an aligned single crystal, the averaging effect of high speed motion results, to the lowest order of approximation, in crystal electric fields which are transverse to the atomic rows. The enormous magnitude of the crystal transverse electric fields is unsurpassed by any other known earth-bound macroscopic sources. For example, the field strengths along the <100> axis of tungsten at 77 K approach 9{center dot}10{sup 13}V/m. Thus quantum electrodynamic (QED) processes in strong fields which are thought to occur only in the extra-terrestrial environment can now be investigated in the laboratory. Here we review the results of measurements performed at the SPS facility in CERN using highly collimated beams of electrons, positrons and photons in the 20-200 GeV range, and germanium crystals cooled to 77 K with thicknesses ranging from 0.07 mm to 1.40 mm. The focus is on ...

Energy Technology Data Exchange (ETDEWEB)

The authors introduce the single electron (Cooper-pair) tunneling junctions using c-axis Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+d} (Bi-2212) superconducting single crystal whiskers. Focused-ion-beam (FIB) etching patterned the Bi-2212 whiskers. The fabricated small stacked junctions have in-plane area S smaller than <1 {micro}m{sup 2}. The junctions showed the current-voltage (I-V) characteristics with the periodic structure of current peaks. The stacking layered structure of Bi-2212 works as multi-junctions array which decrease the effective capacitance, C{sub {Sigma}} = C{sub 0}/N, where C{sub 0} is the capacitance of junction and N is the layer number of elementary junctions. The period of current peaks of I-V curves corresponds to the charging energy of the single Cooper pair, 2Ec (=e{sup 2}/C{sub {Sigma}}).

International Nuclear Information System (INIS)

The possible surface enrichment of chromium and molybdenum during dissolution of Fe18Cr (110) and Fe18Cr3Mo (110) alloys at constant potentials in the passive region is elucidated by taking into account quantitative information on partial dissolution rates of alloy components as measured by #gamma#-spectrometry and on chemical composition of passivating films as measured by ESCA and AES. When combining results from all methods it is found that chromium under all conditions is enriched in the passivating films. An accumulation of chromium in the alloy is also indicated. For molybdenum, an enrichment in the passive film is observed at -0.2 V (SCE), whereas in the potential interval 0.1 - 0.9 V, the molybdenum enrichment as determined by ESCA and AES is hardly significant. On the other hand, #gamma#-spectrometry gives a clear indication of molybdenum enrichment in both potential. (author).

International Nuclear Information System (INIS)

Three new rare earth metal-rich compounds, Gd_4NiTe_2, and Er_5M_2Te_2 (M=Ni, Co), were synthesized in direct reactions using R, R_3M, and R_2Te_3 (R=Gd, Er; M=Co, Ni) and single-crystal structures were determined. Gd_4NiTe_2 is orthorhombic and crystallizes in space group Pnma with four formula units per cell. Lattice parameters at 110(2)K are a=15.548(9), b=4.113(2), c=11.7521(15)A. Er_5Ni_2Te_2 and Er_5Co_2Te_2 are isostructural and crystallize in the orthorhombic space group Cmcm with two formula units per cell. Lattice parameters at 110(2)K are a=3.934(1), b=14.811(4), c=14.709(4)A, and a=3.898(1), b=14.920(3), c=14.889(3)A, respectively. Metal-metal bonding correlations were analyzed using the empirical Pauling bond order concept.

Energy Technology Data Exchange (ETDEWEB)

Magnetic properties of single crystals of nonstoichiometric fluorides M[sub 1-x]R[sub x]F[sub 2+x] (M = Ca, Sr, Ba; R = Ce, Pr, Nd, Gd, Ho, Er, Tm, Yb; with 0.05 [le] x [le] 0.28) with the fluorite-type structure have been studied for the first time. The magnetic susceptibility was measured using a Faraday balance in the 15-300 K temperature range. The samples are paramagnetic following the Curie-Weiss law. The values of paramagnetic Curie temperatures and effective magnetic moments of rare-earth ions have been found. Deviations of the temperature dependence of magnetic susceptibility from the Curie-Weiss law are observed for some nonstoichiometric fluorides at temperatures ranging from 60 to 85 K. Possible reaons for these deviations are discussed. Measurements of magnetic susceptibility provide an effective technique for a rapid and accurate determination of the concentration of rare-earth ions in nonstoichiometric fluorides.

Science.gov (United States)

Attempt to form the Schottky barrier on mercury indium telluride (MIT) surface by deposition transparent conducting electrode (TCE) and avoid the negative results by non-rectifier contacts nature, we have investigated the oxidation of clean MIT surfaces to form an insulating layer to overcome this disadvantage by metal-insulator-semiconductor (MIS) photodetectors designing. Oxide film is grown on the MIT surface by plasma enhance chemical vapor deposition (PECVD). Previously cleaned MIT wafers were dipped and boiled in solution, which consists of mixture of bromine and an organic solvent in ratio of 1:50. By the way of using these films as intermediate slightly conducting insulator, a fast-response MIT based surface-barrier photodetectors have been developed. Pt films were used as TCE frontal electrode by vacuum magnetron sputtering (VMS). The current-voltage characteristic is described quantitatively based on the energy diagram and the found parameters of the Schottky barrier. Details ...

International Nuclear Information System (INIS)

We show that the morphology and the luminescence properties of ZnO layers produced by magnetron sputtering can be controlled by technological parameters of sputtering, particularly by the ratio of argon to oxygen gases in the gas flow during the growth process. Smooth and flat layers were produced with a high Ar/O ratio, while porous layers with various morphologies were obtained with a low Ar/O ratio. The layers produced with O/Ar ration equal to 10 exhibit extremely high near-bandgap luminescence intensity even higher in comparison with bulk ZnO single crystals. The free carrier density estimated from the analysis of photoluminescence spectra is also very high in these samples suggesting that these technological conditions promote both optical and electrical activation of the doping Al impurity. The samples grown with high Ar/O ratios exhibit strong visible emission which is controlled by the technological conditions.

British Library Electronic Table of Contents (United Kingdom)

Magnetic moment and susceptibility of single crystals of rare earth tartrates of the type R(C4H4O6)(C4H5O6)3H2O (where R = Gd, Ho, and Yb), using a vibration sample magnetometer are reported. The experimental values of molar susceptibilities for Gd(C4H4O6)(C4H5O6)3H2O, Ho(C4H4O6)(C4H5O6)3H2O, and Yb(C4H4O6)(C4H5O6)3H2O are 2.58x10-2, 4.66x10-2, and 8.03x10-3 (in cgs em units), respectively. The calculated effective magnetic moments are in good agreement with the theoretical predictions on rare earth ions.

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DC resistivity, dc magnetization, and specific heat of eight Sc/sub 5/Co/sub 4/Ge/sub 10/-type crystal structure compounds R/sub 5/T/sub 4/Ge/sub 10/ for R = Dy, Ho, Er, Tm, and T = Rh and Ir are presented. The resistivity, single crystal magnetization, and specific heat results show that in all those compounds, the magnetic moments order antiferromagnetically in the c direction at low temperature. However, in the Er and Tm compounds, the magnetizations along x-y hard directions do not show any anomalies above 2.0 K. This suggests that the ordered Er and Tm ions, which have positive quadrupole coefficients ..cap alpha../sub j/, interact with a crystal field that has an electronic potential valley along the c axis. The fitting of the hard axis magnetizations to Curie-Weiss law suggests that the resulting antiferromagnetic-like theta reflects the strength of the crystal field torque on the magnetic moments rather than the strength of ...

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Al{sub x}Ga{sub 1{minus}x}P layers (0 {le} x {le} 0.7), with thicknesses of {ge}1 {micro}m were grown on Si (100) wafers by metal-organic molecular beam epitaxy (MOMBE) at 450 C. Transmission electron micrographs of the single crystal films revealed that the microstructure contains stacking faults and microtwins especially near the interface as well as both threading and misfit dislocations. Hardness and elastic modulus were measured using a Nanotest 500 indenter, which can probe the film properties without influence from the substrate. The hardness H varies linearly according to (11.8 {minus} 2.3x) GPa. The absence of alloy hardening is due to the fact that there is no difference in atomic size of Al and Ga. The indentation modulus E/(1{minus}v{sup 2}) decreases monotonically from 136 GPa for GaP to 129 GPa for Al{sub 0.7}Ga{sub 0.3}P and bows only slightly (about 2%) below the straight line of linear interpolation.

International Nuclear Information System (INIS)

A Tm"3"+- Ho"3"+ -codoped single crystal of monoclinic BaY_2F_8 has been characterized by means of high resolution FTIR spectroscopy in the wave number range 2000-24000 cm"-"1 and in the temperature range 9-300 K. The energy level schemes of the two lanthanide ions as determined by the optical absorption spectra is presented, analyzed, and fitted within a single ion Hamiltonian model. The very small energy separation (about 0.6-1.6 cm"-"1) measured between the first and second sublevels of the ground state manifolds for both the ions is in line with the theoretical predictions. The impurity-phonon coupling is put into evidence by the thermally induced line shift and broadening, and by the detection of vibronic replicas of a few lines. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

International Nuclear Information System (INIS)

Epitaxial metastable (GaSb)/sub 1-x/Ge/sub x/ alloys with compostions across the pseudobinary phase diagram have been grown on (100) GaAs substrates by multitarget rf sputtering. An essential feature allowing the growth of these metastable materials was low-energy ion bombardment of the growing film during deposition to enhance surface diffusion, promote mixing, and preferentially sputter incipient second-phase precipitates. Annealing experiments indicated that the metastable films exhibit good high-temperature stability and that they transform through a continuous series of GaSb-rich and Ge-rich phases in which the solute concentrations decrease until the equilibrium two-phase alloy is obtained. While the calculated free-energy difference between the single-phase metastable and equilibrium states is approx.18 meV, the measured activation barrier for the transformation is approx.3 eV. All films were p-type with room-temperature hole concentrations varying from 10"1"6 to 10"1"9 cm"-"3 ...

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The usual method of introducing engineers to the concept of dislocations and their role in plastic flow is to compare an estimate of the theoretical strength of solid (of order {micro}/30 where {micro} is the shear modulus) and the observed strength of either single crystals ({mu}/10{sup 4}) or practical engineering material such as structural steels where the yield stress in shear is of order {mu}/10{sup 3}. However, if one considers the problem in reverse, one can consider the accumulation of dislocations as an important mechanism by which one can produce engineering materials in which the strength level approaches the theoretical strength. If one assumes that the flow stress can be expressed in terms of te mean free path between stored dislocations or as the square root of the global dislocation density, then one can see the influence of dislocation density in a diagrammatic form. It is clear that the strengthening by dislocation ...

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Progress in the development of high-efficiency GaAs solar cells on low-cost, large-area, large-grain, optical-grade polycrystalline Ge substrates is described in this paper. First, we present results on the growth of specular GaAs-AlGaAs layers, across the various crystalline orientations of a polycrystalline Ge substrate, by metallorganic chemical vapor deposition (MOCVD). Second, we present the preliminary optimization of minority-carrier properties of GaAs-AlGaAs structures on poly-Ge substrates towards the improvement of GaAs solar cells. We have demonstrated comparable minority-carrier lifetimes in GaAs double-hetero structures grown on optical-grade poly-Ge substrates and electronic-grade single-crystal Ge substrates. In addition, we describe device-structure optimization that have led us to achieve a open-circuit voltage of {approximately}1 Volt in a GaAs solar cell on poly-Ge and to improve our previous best efficiency from 15.8{percent} for a 1-cm{sup ...

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A phenomenological simulation was carried out for 41 experimental crystal-field (CF) levels within the {sup 4}I{sub 9/2-15/2}, {sup 4}F{sub 3/2-9/2}, {sup 4}S{sub 3/2} and {sup 2}H{sub 9/2} J manifolds, including the available infrared (IR) data up to {approx}15 000 cm{sup -1} for the Nd{sup 3+} ions in the Nd{sub 2}CuO{sub 4} single crystals. The CF Hamiltonian for the tetragonal C{sub 4v} symmetry was diagonalized together with the free-ion Hamiltonian in a basis that spans the entire 4f{sup 3} configuration. A rms error of 9 cm{sup -1} between the calculated and experimental energy level schemes was obtained. A comparison of the spectra in the visible region between the insulating Nd{sub 2}CuO{sub 4} and the metallic Nd{sub 2-x}Ce{sub x}CuO{sub 4}, allowed identifying the absorption bands associated with the development of the charge-doping induced local structural distortions in the superconducting regime.

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Crystals of a new ternary samarium rhenium oxide, Sm{sub 3}ReO{sub 7} were obtained by subsolidus reaction of samariumsesquioxide and rheniumdioxide (ratio 1.5:1) in sealed Pt-10Rh-tubes at 1673 K. The structure was determined by single-crystal X-ray diffraction. Sm{sub 3}ReO{sub 7} crystallizes in the orthorohombic system with unit cell dimensions a = 10.736(5), b = 7.392(3), and c = 7.519(3) in space group Cmcm (No. 63) with Z = 4. The structure consists of ReO{sub 6} octahedra, distorted SmO{sub 6} octahedra, and SmO{sub 8} prisms that are interconnected to each other to form a three-dimensional network. Rhenium has the formal oxidation state of +5 but no metal-metal bond is observed in this compound. The observed magnetization in the temperature range 4 K < T < 52 K is explained by a Curie-Weiss law modified by a temperature independent Van Vleck paramagnetism of samarium (3+).

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When heated through the magnetic transition at T{sub C}, La{sub 0.7}Ca{sub 0.3}MnO{sub 3} changes from a band metal to a polaronic insulator. The Hall constant R{sub H}, through its activated behavior and sign anomaly, provides key evidence for polaronic behavior. We use R{sub H} and the Hall mobility to demonstrate the breakdown of the polaron phase. Above 1.4T{sub C}, the polaron picture holds in detail, while below, the activation energies of both R{sub H} and the mobility deviate strongly from their polaronic values. These changes reflect the presence of metallic, ferromagnetic fluctuations, in the volume of which the Hall effect develops additional contributions tied to quantal phases. (c) 2000 The American Physical Society.

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A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the UT-MARLOWE ion ...

International Nuclear Information System (INIS)

Six uranyl coordination compounds, UO_2(OH)(PYCA) (1), UO_2(PYCA)_2(H_2O).2H_2O (2), UO_2(PIC)_2 (3), UO_2(H_2O)_2(NIC)_2 (4), UO_2(OH)(HINIC)(INIC) (5), and UO_2(PYTAC)_2(H_2O)_2 (6) were grown as single crystals via hydrothermal synthesis (PYCA - pyrazine-2-carboxylate, PIC - picolinate, NIC - nicotinate, INIC - iso-nicotinate, and PYTAC - 2-(pyridin-4-yl)thiazole-5-carboxylate) to study their optical properties. All six compounds have been identified via single crystal X-ray diffraction and fully characterized via powder X-ray diffraction, infrared spectroscopy, UV-Vis spectroscopy, and fluorescence spectroscopy. Three of the complexes, 1, 3, and 6, represent new structures, and their synthesis and structural characterization is detailed within. The structures of 2, 4, and 5 have previously been reported in the literature. Coordination polymer 1 crystallizes in the orthorhombic space group Pca21 (a = ...

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Thinning and burning forests established on revegetated mine pits in jarrah (Eucalyptus marginata) forests of south-west Australia is being considered as a management option to accelerate succession in sites with excessive tree densities. To assess the impact of thinning and burning on reptiles and small mammals, we installed trapping grids in eight thinned and burned sites, each paired with untreated controls. Of the eight pairs, four were in rehabilitated sites (planted with nonlocal species) and four were in restored sites (seeded with local species). Thinning and burning had no significant impact on the small mammal community, although Cercatetus concinnus was more abundant in rehabilitated sites. In contrast, thinning and burning significantly increased reptile abundance and species r...

Science.gov (United States)

Thin film solar cells and solar cell testing - photovoltaic cells, radiation damage to cadmium sulfide solar cells, and airplane testing of solar cells

Science.gov (United States)

A thin-film evaporator requires only a short heating time to concentrate a solution since it has a high thermal efficiency and has a small capacity. Thus, the chemical industry often uses this type of evaporator for concentrating materials that are subjec...

Science.gov (United States)

... Accession Number : ADA539462. Title : 6.5 kW, Yb:YAG Ceramic Thin Disk Laser. Descriptive Note : Technical note 1 Jan-1 Dec 2010. ...

Science.gov (United States)

PMID:21671451

Science.gov (United States)

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

CERN Document Server

A simple experiment to observe weak localization in thin Ag films is presented. A clear theoretical signature of weak localization is predicted in mangetoresistive measurements of thin films samples. We present a simple method for making thin Ag film samples, using evaporative deposition, and observing the small magnetoresistive signal, using a resistance bridge technique. Typical results from our students show that Ag films show the predicted behavior for weak localization with spin effects. These effects can be easily observed in a liquid helium dewar.

International Nuclear Information System (INIS)

(1 Feb 1975). Netherlands Rollin, DF Robinson, JE McMaster Univ.,

Energy Technology Data Exchange (ETDEWEB)

This work has analyzed the key variables of indentation tip radius, contact radius, delamination radius, residual stress and superlayer/film/interlayer properties on nanoindentation measurements of adhesion. The goal to connect practical works of adhesion for very thin films to true works of adhesion has been achieved. A review of this work titled ''Interfacial toughness measurements of thin metal films,'' which has been submitted to Acta Materialia, is included.

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X-ray photoelectron spectroscopy and ex situ scanning tunneling microscopy measurements have been combined to investigate the thickness, the chemical composition, and the structure of passive films formed in 0.5 M H{sub 2}SO{sub 4} on Fe-22Cr(110). Aging under polarization at +500 mV/SHE causes a dehydration (anodic) reaction of the outer chromium hydroxide layer of the passive film. This anodic reaction results in a thickening of the inner mixed Cr(III) and Fe(III) oxide layer enriched in Cr{sub 2}O{sub 3}. It also causes a coalescence of the oxide nuclei of the passive film and a crystallization of the inner Cr{sub 2}O{sub 3}. It also causes a coalescence of the oxide nuclei of the passive film and a crystallization of the inner Cr{sub 2}O{sub 3} oxide layer in epitaxy with the substrate. The epitaxial relationship is {alpha}-Cr{sub 2}O{sub 3}(0001) {parallel} Fe-22Cr(110) with three different azimuthal orientations. Aging under polarization is beneficial to the stability of the ...

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In this paper we discuss the results of thermoluminescence (TL) studies carried out on freshly quenched crystals of KBr doped with {approx} 50 ppm of Eu{sup 2+} ions which were X-irradiated at room temperature. The TL glow curve of this phosphor material consists of three glow peaks at 355, 376 and 398 K whose intensities increased as a function of X-irradiation time. The TL glow peaks were analyzed by the total curve-fitting method in order to obtain the characteristic parameters; activation energy, pre-exponential factor and kinetic order. The spectral character of the emission recorded during thermoluminescence was found to be the same for all glow peaks and consists of a broad band centered at {approx} 420 nm. It is proposed that the model of the TL process most consistent with our experimental results is one in which the Eu{sup 2+} impurity acts as an electron trap during the irradiation process and that the radiation induced center (partner of an center) and the V{sub k} center ...

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Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of this research is to ...

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The magnetic structure of the cubic compound CeAl{sub 2} is incommensurate and double-k. The moments on the two Ce sites describe two elliptical helices of opposed chiralities and lie in the (11-bar0) plane, with their Fourier components m{sup k} close to the [111] direction. Recent symmetry considerations, including for the first time the inversion center of the crystal, have reduced the number of parameters of this structure and have underlined the existence of a phase difference between the projections m{sub x}{sup k}, m{sub y}{sup k} and m{sub z}{sup k} of m{sup k}. Up to now, although many neutron investigations have been carried out on CeAl{sub 2} single crystals, no set of magnetic intensities was available which was large and good enough to check whether this phase difference exists or not. We have measured such a set of data, taking great care of the instrumental resolution in order to avoid unwanted contributions to the intensities ...

International Nuclear Information System (INIS)

Textured silicon nitride (Si_3N_4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si_3N_4, with emphasis on the anisotropic and abnormal grain growth of #beta#-Si_3N_4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for #beta#-Si_3N_4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental data, including the texturing mechanisms ...

International Nuclear Information System (INIS)

A new iron phosphate (NH4)4Fe3(OH)2F2[H3(PO4)4] has been synthesized hydrothermally at HF concentrations from 0.5 to 1.2 mL. Single-crystal X-ray diffraction analysis reveals its three-dimensional open-framework structure (monoclinic, space group P21/n (No. 14), a=6.2614(13) A, b=9.844(2) A, c=14.271(3) A, ?=92.11(1)o, V=879.0(3) A3). This structure is built from isolated linear trimers of corner-sharing Fe(III) octahedra, which are linked by (PO4) groups to form ten-membered-ring channels along [1 0 0]. This isolated, linear trimer of corner-sharing Fe(III) octahedra, [(FeO4)3(OH)2F2], is new and adds to the diverse linkages of Fe polyhedra as secondary building units in iron phosphates. The trivalent iron at octahedral sites for the title compound has been confirmed by synchrotron Fe K-edge XANES spectra and magnetic measurements. Magnetic measurements also show that this compound exhibit a strong antiferromagnetic exchange below TN=17 K, consistent with ...

International Nuclear Information System (INIS)

Full text: It is known that the ion implantation of germanium single crystals at room temperature results in drastic alteration of the germanium surface and the formation of cellular relief. Voids were found into the near-surface damage layer. The intersection of these voids with the germanium surface, as result of sputter etching, forms cellular relief. However, exact mechanism responsible for formation of the voids is not known. A 10 and 30 keV Ga"+ irradiation of Ge #left brace#100#right brace# crystal at room temperature was carried out using a focused ion beam (FIB) system with a dose in the range 0.5x10"1"2 to 1.5x10"1"4 ion/cm"2. The topology of the modified germanium surface and the structure of the radiation damage was studied using imaging facilities of the FIB systems and transmission electron microscopy. The strong cellular structure of Ge was observed after an ion dose of 3x10"1"3 ion/cm"2. High-resolution TEM showed a complex ...

International Nuclear Information System (INIS)

A new study on the pressure-induced phase transitions of TiO_2 has been performed using all-electron density-functional theory based computations with the projector augmented wave and the linearized augmented plane wave methods considering five experimentally observed structures. The static results yield a picture that is consistent with experiments, i.e., phase transitions with pressure are predicted as rutile #-># monoclinic baddeleyite (MI) #-># orthorhombic I (OI) #-># cotunnite (OII) on compression, and OII #-># OI #-># MI #-># columbite (TiO_2II) on decompression. The elasticities of these five polymorphs are compared. Except for the baddeleyite structure, which is considerably softer than the other polymorphs, all phases show a zero pressure bulk modulus in the range of 200-240 GPa, consistent with compression results and the single crystal elastic constant; on the basis of these results we can say that the cotunnite ...

International Nuclear Information System (INIS)

This review describes the basic theory and some recently developed techniques for the study of quadrupole nuclei with half integer spins in powder materials. The latter is connected to the introduction of the double rotation (DOR) by A. Samoson et al. (1) and to the introduction of the multiple quantum magic-angle spinning (MQ MAS) technique by L. Frydman et. al. (2). For integer spins, especially the solid-state deuterium magnetic resonance, we refer to the review of G.L. Hoatson and R.L. Vold: ''"2H-NMR Spectroscopy of Solids and Liquid Crystals'' (3). For single crystals we refer to O. Kanert and M. Mehring: ''Static quadrupole effects in disordered cubic solids''(4) and we would like also to mention the ''classic'' review of M.H. Cohen and F. Reif: ''Quadrupole effects in NMR studies of solids'' (5). Some more recent reviews in the field under study are D. Freude and J. Haase ''Quadrupole effects in solid-state NMR'' (6). Ch. Jager: ...

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Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup -2/. During analysis negative secondary ions were monitored ...

International Nuclear Information System (INIS)

We describe a new apparatus that combines pulsed laser excitation in a molecular beam with surface-science methods for preparation of clean single-crystal surfaces and detection of adsorbates to enable state-selected studies of gas-surface reaction dynamics. Reactant molecules are prepared in specific vibrationally excited states via overtone pumping using tunable, narrow-band laser radiation. The collision-free environment of the molecular beam prevents relaxation of the prepared molecules before impact on the target surface and enables complete control over the collision energy and incidence angle. Chemisorption products are detected after a given deposition time by Auger electron spectroscopy. To achieve sufficient beam flux of state-selected reactant molecules for product detection by standard surface-science techniques, we use a high-intensity, short-pulse molecular-beam source matched to the low duty cycle of the pulsed lasers used in our experiments. We ...

International Nuclear Information System (INIS)

The radiation-induced microstructural changes have been studied by cross-sectional transmission electron microscopy for single-crystal #alpha#-Al_2O_3 samples irradiated with triple ion beams (0.25 MeV H"+, 0.6 MeV He"+ and 2.4 MeV O"2"+; 'Triple (A)'), (0.33 MeV H"+, 0.45 MeV He"+ and 1.3 MeV O"+; 'Triple (B)') and three consecutive single ion beams (0.3 MeV H"+ ion followed by 0.6 MeV He"+ and then 0.8 MeV O"+ ions) at 650 C to doses in the range 0.1-8.4 dpa at the damage peak. In the specimen irradiated with Triple (A), having the same average projected range to a total peak dose of 3.7 dpa, cavities with an average diameter of 13 nm were formed between 1.2 and 1.75 #mu#m in depth causing a swelling of 0.1% at the peak, which is larger than those of the specimens irradiated with other conditions. The extent of the cavity-introduced region is some 40% smaller than observed in the damage region due to the He"+ and the O"+ ions and due to the H"+ ions in the sample ...

International Nuclear Information System (INIS)

R_2PdSi_3 compounds have been found to exhibit rich magnetic phenomena arising from the interplay between RKKY interaction, crystal electric field effects and geometric frustration due to the derived hexagonal AlB_2 structure. The observed crystallographic superstructure further complicates the CEF level scheme. Inelastic neutron scattering measurements on single crystals of Tm_2PdSi_3 and Er_2PdSi_3 have been performed at the cold triple axis spectrometer PANDA in FRM-II. Both compounds order antiferromagnetically at T_N=7 K and 2.1 K respectively; Er_2PdSi_3 undergoes a second phase transition at T_2=2 K. Several low lying CEF excitations (below 10 meV) were observed. The intensity of the lowest excitation show strong directional dependence (in HK0 plane for Er_2PdSi_3 and in HHL plane for Tm_2PdSi_3), from which the details of the transitional matrix could be deduced. Measurements in magnetic fields up to 13 T show Zeeman splitting of the ...

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X-ray magnetic circular dichroism (XMCD) was used to probe the existence of induced magnetic moments in yttrium iron garnet (YIG) films in which yttrium is partly substituted with lanthanum, lutetium or bismuth. Spin polarization of the 4d states of yttrium and of the 5d states of lanthanum or lutetium was clearly demonstrated. Angular momentum resolved d-DOS of yttrium and lanthanun was shown to be split by the crystal field, the two resolved substructures having opposite magnetic polarization. The existence of a weak orbital moment involving the 6p states of bismuth was definitely established with the detection of a small XMCD signal at the Bi M{sub 1}-edge. Difference spectra also enhanced the visibility of subtle changes in the Fe K-edge XMCD spectra of YIG and {l_brace}Y, Bi{r_brace}IG films. Weak natural X-ray linear dichroism signatures were systematically observed with all iron garnet films and with a bulk YIG single crystal cut ...

International Nuclear Information System (INIS)

Nuclear Reaction Analysis (NRA) with deuteron ion beams has been used to probe for ion implanted nitrogen and carbon with high sensitivity in zinc oxide and silicon single crystals. The ion implanted N was measured using 1.4 MeV deuteron ion beams and was found to be in agreement with calculated values. The limit of detection for N in ZnO is 8x1014 ions cm-2. Raman measurements of the ion implanted samples showed three additional modes at 275, 504, and 644 cm-1 compared to the un-implanted ZnO crystals. The NRA and Raman results provided information on the N concentration, depth distribution, and structural changes that occur in dependence on the nitrogen ion fluences. The deuterium induced 12C(d,p)13C reaction was used to measure the carbon impurity/dose in ion implanted silicon. It was found that the use of a large cold shield (liquid nitrogen trap) in the ion implanter chamber greatly reduces the amount of carbon impurity on the surface of ...

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Crystals of disamarium rhenium (IV) pentoxide, Sm{sub 2}ReO{sub 5}, were obtained by subsolidus reaction of samariumsesquioxide and rheniumdioxide (ratio 1:1) in sealed Pt 10Rh tubes at 1673 K. The structure was determined by single-crystal X-ray diffraction. Sm{sub 2}ReO{sub 5} crystallizes in the tetragonal system with unit cell dimensions a = 8.646(3) {angstrom} and c = 5.747(2) {angstrom} and space group P4/n (no. 85) with Z = 4. The structure consists of isolated RE{sub 2}O{sub 8} groups and the (Sm{sub 4}O) chains are inter-connected by common oxygen atoms to form a three-dimensional network. Each Re{sub 2}O{sub 8} group is composed of a pair of rhenium each surrounded by four oxygens with a short Re-Re distance of 2.251(1) {angstrom} indicating a metal-metal bond. Rhenium has the formal oxidation state of +4. The observed magnetizations in the temperature range 1.8 < T < 100 K exhibits antiferromagnetic ordering below 2.4(1) K and obey a Curie-Weiss ...

Science.gov (United States)

A way to synthesize the transient zwitterionic silylene L'Si: 8 {L'=CH[(C=CH(2))CMe(N(tBu))(2)]} and achieve its facile dimerization to the remarkable N-heterobicyclic disilane 8(2) is described. At first, employing the beta-diketiminate ligand L [L=CH(CMeN(tBu))(2)], both starting materials LH (2) and its N-lithium salt LLi (3) can react with SiBr(4) to yield the silylene precursor L'SiBr(2) (4) by silicon-induced C-H activation at an exocyclic methyl group on the backbone of the ligand. Compound 4 reacts with SiBr(4) above room temperature to afford the unexpected terminal CH(SiBr(3))-substituted dibromosilane 6 along with the unique tricyclic trisilane 7. Reduction of 4 with KC(8) at 0 degrees C furnishes the novel N-heterobicyclic disilane 8(2), which is a formal dimer of the desired zwitterionic silylene L'Si: (8). It has been reasoned that compound 8(2) may results from [4+1] cycloaddition of two molecules of 8 to give the transient dimer 8(2)', which subsequently undergoes ...

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The thermal radiation which generated from the patterned Ta/Pt/Ta thin heater achieved a high temperature up to 1010 {sup o}C under applied current of 2.4 A. In order to reduce an electromigration at high current of 2 A, a Ta capping layer was placed on the Pt layer instead of conventional capping layer, such as SiNx and CoWP. Under the thermal radiation at the applied current of 2 A in the Ta/Pt/Ta thin heater, the Ta capping layer enhanced the lifetime of the Pt thin heater up to 5 h. A stamping process for the crystallization of a-Si was performed for 40 samples using the Ta/Pt/Ta thin heater. For all samples, a-Si has been selectively crystallized and Raman peaks were located near 519 cm{sup -} {sup 1}. These results indicated that the thermal radiation of the Ta/Pt/Ta thin heater was maintained constantly due to the Ta capping.

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An experimental study was conducted to determine the effects of ply thickness in composite laminates on thermally induced cracking and changes in the coefficient of thermal expansion (CTE). After a few thermal cycles, laminates with thick-plies cracked, resulting in large changes in CTE. CTE`s of the thin-ply laminates were unaffected by microcracking during the first 500 thermal cycles, whereas, the CTE`s of the thick-ply laminates changed significantly. After about 1500 cycles, microdamage had also reduced the CTE of the thin-ply laminates to a value of about half of their initial value.

International Nuclear Information System (INIS)

The optical pressure exerted o a thin film, which is locked in the evanescent field formed at the plane interface with a totally-reflected Gaussian beam, is investigated. Some calculations of the pressure on the film caused by the evanescent field are presented in the different conditions of film thickness, film position, incident angle and polarization of a gaussian beam. The results show that the pressure exertion on the thin film can change from pushing to pulling as the parameters are varied. In particular, we find that the direction of optical pressure can act oppositely at the different positions of the film surface in the evanescent field.

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Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

International Science & Technology Center (ISTC)

Experimental and Theoretical Study of the Residual Nuclide Production in 40-2600 MeV Proton-Irradiated Thin Targets of ADS Basic Materials

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Short communication. 2 figs.

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The authors report the fabrication and characterization of a low temperature (200--400 C) thin film gas sensor constructed from a MOCVD-grown yttria-stabilized zirconia (YSZ) layer sandwiched between two platinum thin film electrodes. A reproducible gas-sensing response is produced by applying a cyclic voltage which generates voltammograms with gas-specific current peaks and shapes. Growth conditions are optimized for preparing YSZ films having dense microstructures, low leakage currents, and maximum ion conductivities. In particular, the effect of growth temperature on film morphology and texture is discussed and related to the electrical and gas-sensing properties of the thin film sensor device.

UK PubMed Central (United Kingdom)

The results of a histological study of normal osteoid tissue in man, the monkey, the dog, and the rat, using thin microtome sections of plastic-embedded undecalcified bone, are described. Osteoid tissue...Full Text Available

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... 2.2.1 Polymerization of DVB Under Pressure DVB was polymerized at 300*C in thin-walled Pd-Ag capsules at pressures up to 60,000 psi. ...

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Lithium phosphorous oxynitride(Lipon) thin films as a lithium ion conductive electrolyte were prepared by radio frequency reactive sputtering in N2 plasma. The properties of the amorphous Lipon solid electrolyte were investigated as a function of N2 pressure during reactive sputtering. The ionic conductivity and the electrochemical stability of Lipon thin films improved drastically as the N2 pressure decreased. The ionic conductivity closed to 10?6 S cm?1 and obtained a stability window of 1.0?5.0 V with an N2 pressure of 5 mTorr, where the number of nitrogen bonds between the phosphate groups were more than those formed at higher pressure. It was possible to fabricate the Li//LiCoO2 complete thin film battery using this Lipon solid electrolyte, which exhibited excellent discharge characte...

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In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector {approx} 1.13 cm{sup 2} in area is fabricated on a thin ( {approx} 35{mu}m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.

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Figure 23 presented detailed layout of the cooling system designed for the Mach 6 hypersonic- transport. The distribution system consisted of thin-wall ...

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Single crystals of RbBaTaS{sub 4} (1) and K{sub 2}BaTa{sub 2}S{sub 11} (2) were obtained from the reactions of Ta, with in situ formed fluxes of A{sub 2}S{sub 3} (A = K, Rb), BaS, and S at 500 C. Compound 1 crystallizes in the orthorhombic space group Pnma with a = 9.3286(5), b = 7.0391(4), c = 12.4365(7) A, V = 816.6(1) A{sup 3}, Z = 4. Compound 2 crystallizes in the monoclinic space group P2{sub 1}/c with a = 14.5280(10), b = 12.6347(7), c = 17.5148(12) A, {beta} = 94.744(8) , V = 3203.9(4) A{sup 3}, Z = 4. The structure of RbBaTaS{sub 4} (1) consists of isolated tetrahedral [TaS{sub 4}]{sup 3-} anions and Rb{sup +} and Ba{sup 2+} cations. The Ba{sup 2+} cations are surrounded by nine sulfur atoms forming distorted tricapped trigonal prisms, whereas the Rb{sup +} cations are in an irregular environment of ten sulfur atoms. The structure of K{sub 2}BaTa{sub 2}S{sub 11} (2) consists of two different dinuclear [Ta{sub 2}S{sub 11}] units which ...

Science.gov (United States)

Feasibility of depositing continuous films of nano-porous alumino-silicates, primarily zeolites and MCM-41, on metallic and non-metallic substrates was examined with an aim to develop membranes for separation of gaseous mixtures and also for application as hydrogen storage material. Mesoporous silica was deposited in-side the pores of these nano-porous disks with an aim to develop membranes for selective separations. Our study involves supported zeolite film growth on substrates using in-situ hydrothermal synthesis. Faujasite, Silicalite and Mesoporous silica have been grown on various metallic and non-metallic supports. Metallic substrates used for film growth included anodized titanium, sodium hydroxide treated Titanium, Anodized aluminum, and sintered copper. A non-metallic substrate used was nano-porous aluminum oxide. Zeolite film growth was characterized using Scanning Electron Microscope (AMRAY 1820) and High Resolution Transmission electron microscope. Silicalite was found to ...

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For a wider application of GaAs single crystals for semiconductor devices a cheaper process to grow crystals with high purity and low dislocation density is required. According to todays knowledge the Czochralski method with a hot wall vessel should be the choice. The temperature of the vessel has to be 700deg C to avoid condensation of arsenic which vapourizes from the 1240deg C hot melt. Arsenic vapour is very agressive against all metals. Therefore the corrosion resistance of metals and alloys with a high melting point and also ceramics has been tested. All the alloys under investigation are corroded severely so that they have to be excluded as a material for the vessel. The metals tantalum, molybdenum and tungsten are more resistent, titanium forms initially a thick protection layer and further corrosion is greatly reduced. The ceramics investigated (TiB{sub 2}; ALN; Makor; BN) are not attacked by arsenic though they may store some arsenic. ...

International Nuclear Information System (INIS)

Surface-sensitive UV photoelectron yield spectroscopy was employed to study electron acceptor levels at surfaces of chalcopyrite structure Cu-In-Se thin films. Surface Fermi level pinning was observed for Cu-rich films. Shallow acceptor levels ascribable to defects Cu_I_n and V_C_u were observed for near-stoichiometric and In-rich films respectively. (orig.).

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Crude N,N-dialkylcarbamoylmethylphosphonates and phosphine oxide extractants, and particularly crude dihexyl N,N-diethylcarbamoylmethylphosphonate and octylphenyl N,N-diisobutylcarbamoyl phosphine oxide, are purified by distilling the crude materials in a thin film evaporator. Preferably, the crude materials are reacted with concentrated hydrochloric acid and then with aqueous sodium hydroxide prior to distillation in the thin film evaporator to hydrolyze impurities contained in them. The purified extractants are useful for extracting actinides and lanthanides from liquid waste streams. (author).

International Nuclear Information System (INIS)

The phenomenological description of the giant magnetoresistance effect as well as discussion of the requirements which must be fulfilled in giant magnetoresistance thin film structures are given in the first part of our review. In the second part the magnetization reversal and giant magnetoresistance effect of antiferromagnetically coupled multilayers, spin Valve and pseudo-spin valve thin film structures are explained. For these structures we also discuss the influence of the structure defects such as surface roughness and pinholes on the giant magnetoresistance effect. (author)

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A simple and continuous model for the on-state current of polysilicon thin-film transistors, suitable for implementation in circuit simulators, is presented. The model includes the potential barrier at the grain boundaries, the channel length modulation and the excess current due to impact ionization. Comparison between measured output characteristics and the model shows excellent agreement over wide range of bias voltages and for devices with different gate lengths.

International Nuclear Information System (INIS)

Electrodeposition of semiconducting iron oxide (Fe_2O_3) thin film was carried out from an alkaline sulphate bath. A 0.1 M ferrous sulphate (FeSO_4#centre dot#7H_2O) was complexed with 0.1 M citric acid. By addition of 1 N NaOH, pH of the solution was made alkaline (pH=9) and deposition of iron oxide (Fe_2O_3) thin films was carried out potentiostatically at room temperature (300 K). From cyclic voltametry (CV), electrochemical studies were carried out for deposition of iron oxide thin films. The XRD studies reveal that Fe_2O_3 with epsilon (#epsilon#) phase having monoclinic crystal structure is formed. By observing scanning electron microscope (SEM), it is seen that iron oxide films were homogeneous, uniform and well covered to surface of the substrate. Grain size was found to be in nanometers range from XRD analysis. The optical band gap of Fe_2O_3 thin film was estimated to be 1.90 eV. Electrical ...

International Nuclear Information System (INIS)

The effects of gate and drain bias stresses on thin film transistors fabricated in polysilicon films crystallized using the advanced sequential lateral solidification excimer laser annealing (SLS ELA) process, which yields very elongated polysilicon grains and allows the fabrication of TFTs without grain boundary barriers to current flow, are investigated as a function of the active layer thickness and of the TFT orientation relative to the grains. The application of hot carrier stress, with a condition of V_G_S = V_D_S/2, was determined to induce threshold voltage, subthreshold swing and transconductance degradation for TFTs in thicker polysilicon films and the associated stress-induced increase in the active layer trap density was evaluated. However, this device degradation was drastically reduced for TFTs fabricated in ultra-thin films. Furthermore, the application of the same stress condition to TFTs oriented vertically to the elongated ...

International Nuclear Information System (INIS)

From the results of the In-Service Inspection (ISI) measuring the wall thickness of outlet (hot-leg side) feeder pipes performed at two Canadian nuclear power plants, Point Lepreau and Gentilly-2 in 1995 and 1996, respectively, the wall thinning degradation of feeder pipes at the bend part was found to be much more severe than expected. It has been well known that such wall thinning of feeder pipes is caused by the flow accelerated corrosion (FAC) which is one of the mechanical-chemical degradation mechanisms affecting the integrity of piping systems. For the Wolsung unit 1, the wall thickness measurements have been performed during every overhaul period since 1996. The wall thinning rates at the bends of outlet feeder pipes were assessed to exceed the design value. However, for the Wolsung units 2, 3 and 4, the wall thinning rates of all the outlet feeder pipes were assessed not to exceed it. The ...

International Nuclear Information System (INIS)

We give a theoretical design for a locally resonant two-dimensional cylindrical structure involving a pair of C-shaped voids in an elastic medium which we term as double 'C' resonators (DCRs) and imbedded thin stiff bars, that displays the negative refraction effect in the low frequency regime. DCRs are responsible for a low frequency band gap which hybridizes with a tiny gap associated with the presence of the thin bars. Using an asymptotic analysis, typical working frequencies are given in closed form: DCRs behave as Helmholtz resonators modeled by masses connected to clamped walls by springs on either side, while thin bars behave as a periodic bi-atomic chain of masses connected by springs. The discrete models give an accurate description of the location and width of the stop band in the case of the DCR and the first two dispersion bands for the periodic thin bars. We then combine our asymptotic ...

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Nb{sub 2}O{sub 5} thin films were formed on aluminum foils by a sol-gel process in order to increase the capacitance of the aluminum foils which are used as aluminum electrolytic capacitors. Investigations focussed on the preparation and characterization of the coating solution, the formation of Nb{sub 2}O{sub 5} thin films on aluminum foils, and the heat treatment and anodization of the films. The phase transition and electrical properties, such as capacitance, leakage current, and withstand voltage of the Nb{sub 2}O{sub 5} thin films were also measured. The Nb{sub 2}O{sub 5} thin films annealed at temperatures below 550 degree C were found to be amorphous, but they were crystallized to the orthorhombic phase by annealing at temperatures higher than 580 degree C. The capacitance of the coated samples increased with an increase in the thickness of the formed Nb{sub 2}O{sub 5} thin ...

Science.gov (United States)

Elastically deforming thin glass (thickness = 0.13 to 0.80 mm) provides an alternate method of forming a curved glass reflector which can eliminate some of the disadvantages of thicker glass. A concept is described where silvered thin glass is bonded to a steel backing to form a laminate with a reflectance greater than 93%. Subsequent bending of the flat reflector laminate to a concentrating profile produces compressive stresses throughout the glass if the laminate is properly designed. These compressive stresses enhance fracture resistance and the lamination provides protection for the silver. The design of the laminate is outlined for 0.25 and 0.51 mm thickness glass and fabrication procedures are discussed. Thermal/humidity cycling, hail impact, bond strength measurements and reflectance results are presented which demonstrate the performance capabilities of this reflector laminate concept.

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As thin films become increasingly popular (for solar cells, LEDs, microelectronics, batteries), quantitative morphological information is needed to predict and optimize the film's electronic, optical and mechanical properties. This quantification can be obtained quickly and easily with X-ray diffraction using an area detector and synchrotron radiation in two simple geometries. In this paper, we describe a methodology for constructing complete pole figures for thin films with fiber texture (isotropic in-plane orientation). We demonstrate this technique on semicrystalline polymer films, self-assembled nanoparticle semiconductor films, and randomly-packed metallic nanoparticle films. This method can be immediately implemented to help understand the relationship between film processing and microstructure, enabling the development of better and less expensive electronic and optoelectronic devices.

British Library Electronic Table of Contents (United Kingdom)

Dopant-free Bi2Ti2O7 thin films with pyrochlore structure and La-doped bismuth titanate thin films have been fabricated by means of chemical solution decomposition, and characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy and UV?Vis spectrophotometry in this study. Their photocatalytic activities have been evaluated by photodegrading methyl orange solution, and the optimum processing parameters for the highest photocatalytic activity have been found. Moreover, the effects of La-doping on the phase transformation and the photocalalytic activity have been studied. It has been deduced from the experiment result that substituted La3+ ions can act as a stabilizer of Aurivillus phase BLT and a grain?growth inhibitor in BLT thin films.

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The measurement of local heat transfer coefficients is necessary to record the basic phenomena of heat transfer in thin-film apparatuses. For this reason the so-called electrochemical analogy method was developed and used for this application. The electrochemical method implies a specifically composed electrolyte which substitutes the fluid to be evaporated in the thin-film apparatus. Using the redox electrolyte (0,025 kmol/m/sup 3/ K/sub 4/Fe(CN)/sub 6/ resp. k/sub 4/Fe(CN)/sub 6/ and 2nNaOH) the viscosity was, for the first time, thickened until 0.4 Pa s by the help of hydroxyethyl-cellulose.

International Nuclear Information System (INIS)

High-resolution electron microscope observations confirm the presence of small crystallites in thin TbFeCo films protected by Si_3N_4 overcoats. Selected area electron diffraction patterns in top-view projection indicate that the crystals have a face-centered-cubic structure. Microscope analysis reveals grain growth following annealing of these protected thin films at 200 degree C in vacuum, and Kerr measurements yield large reductions in coercivity relative to the room-temperature value. The typical grain size visible in top-view observations increases from about 3 nm in the as-deposited samples to about 30 nm after annealing at 200 degree C for 36 h while the static coercivity, H_c, drops by about 40%. The fcc structure of the crystals is retained after annealing.

International Nuclear Information System (INIS)

Chromium nitride thin films were deposited on SA-304 stainless steel substrates by using direct-current reactive magnetron sputtering. The influence of process conditions such as nitrogen content in the fed gas, substrate temperature, and different sputtering gases on microstructural characteristics of the films was investigated. The films showed (200) preferred orientation at low nitrogen content (< 30%) in the fed gas. The formation of Cr_2N and CrN phases was observed when 30% and 40% N_2 were used, with a balance of Ar, respectively. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the morphology and surface topography of the thin films, respectively. Microhardness tests showed a maximum hardness of 16.95 GPa for the 30% nitrogen content.

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Silicon thin film with thickness in range 1000-5300 A deposited on rough Cu foil by a radio frequency magnetron sputtering is used as anode materials for Li-ion rechargeable batteries. The SEM, XRD and TEM analysis reveals that the Si thin film has a floccular nano-sized multi-crystalline structure. Li ions insertion/extraction evaluation is performed mainly with constant current charge/discharge cycling and cyclic voltammetry (CV) at room temperature. The cycleability and reversible discharge capacity are found to depend on the film thickness, and thinner films give larger accommodation capacity. A 3120 A Si film provides a reversible specific capacity over 3500 mA hg{sup -1} with excellent cycleability under 0.5 C charge/discharge rate.

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Most palladium thin film based hydrogen gas sensors have response and recovery times that are too long to make them useful in vehicular and stationary gas leak detection applications. In contrast, a palladium-silver thin film based microcantilever (MC) hydrogen gas microsensor is reported herein with near ideal response characteristics for use in these hydrogen economy related applications. Specifically, 3-10 second response and recovery times have been measured for these sensors in contrast to previous sensor response measurements of several to tens of minutes using Pd thin film and MC based sensing techniques. The much reduced response times observed in the present study are attributed to a wet chemical Pd-Ag thin film deposition technique and a gas conditioning protocol that produces a highly nanostructured, porous film that rapidly adsorbs and desorbs H2, allowing rapid equilibration with the H2 ...

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The possibility to compress and to split laser pulses at their nonlinear optical transmission through semiconductor films was investigated

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Two manufacturing processes have been developed for fabricating PLZT bonded lens assemblies (BLA's) for the USAF EEU-2/P Thermal/Flash Protective Goggle. One process utilizes thin Sylgard spacers which remain in the BLA to establish bond thickness between...

UK PubMed Central (United Kingdom)

External application of auxin and cytokinin is required for the formation of flower buds on thin-layer tissue explants of Nicotiana tabacum cv Samsun. Interaction between both plant...Full Text Available

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Metal-Semiconductor Solar Cells," J. Appl. Phys. 46,. 1286 (1975). 12) H. B. Kim , G. G. Sweeney and I. S. Heng, "Analysis of ...

International Nuclear Information System (INIS)

In this paper, we present experimentally determined reflection factors of mirrors based on the depleted uranium and dependence of reflection factor on time of presence of samples on air.

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Pulsed laser deposition (PLD) is known for its capacity to reproduce a target composition on a substrate. The authors have used this deposition technique to produce thin films of transition metal chalcogenides. However, the deposits were always deficient in Te relative to the starting material (composed by a refractory metal (niobium) and a chalcogene (tellurium)). Variations of the interreticular distances have been observed with respect to fluence and substrate temperature. The authors show that spatial composition of the films is determined by a degree of crystallinity of deposit and by the reaction of formation of Te{sub 2} molecule within laser induced plume. Two kinds of deposits have been obtained: Nb{sub 5}Te{sub 4}-type thin films which have a one-dimensional structure and NbTe{sub 2}-type thin films which have a two-dimensional structure. While NbTe{sub 2} films have been realized by sputtering, it is the first ...

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Abstract Visible blue cathodoluminescence (CL), photoluminescence (PL), x-ray excited optical luminescence (XEOL) and electroluminescence (EL) via Zf free excitonic emission have been obtained from CuBr thin films deposited on glass, Cr coated glass, GaAs and Si substrates. In addition to the Zf emission several peaks corresponding to Cu+ emissions via 3d94s - d10 transitions were observed on the AC EL spectrum at 2.10, 2.7, 3.03, 3.07 and 3.80 eV. X-ray diffraction (XRD) measurements confirmed that the vacuum evaporated CuBr thin films grow preferentially with a (111) orientation irrespective of the substrate. While the AC voltage source was found to have no detrimental effects on CuBr thin films, cathodic deposition of Cu metal via electrolytic decomposition was observed under steady sta...

UK PubMed Central (United Kingdom)

BackgroundPrevious research has demonstrated that exposure to images depicting the thin female ideal has negative effects on some females' levels of body dissatisfaction. Much of...Full Text Available

CERN Document Server

The aim of this work was to study the possibility of producing a fast switching optical thin film device to react to laser radiation in the visible/near infrared region of the spectrum. The switching mechanism was to be thermally driven. A computer program was written to enable the effects of changes of the refractive index of a component of a multilayer thin film stack to be modelled. Attempts to use the phase transition in vanadium dioxide were unsuccessful because, in the spectral region of interest, the 'open-state' absorption was too great. A class of materials known as 'the bronzes' was identified as being potentially useful. Attempts were made to produce thin films of bronze compounds of vanadium, tungsten and molybdenum by the techniques of conventional thermal evaporation and laser ablation for further studies. The former technique appeared to suffer from problems of decomposition of the source material. The latter ...

International Nuclear Information System (INIS)

Certain applications are described of radionuclide X-ray fluorescence analysis in the ore dressing industry, in the manufacture of building materials, in metallurgy, pharmacy, in the chemical, photographic and paper industries, in space exploration, in archeology and for measuring the thicknesses of thin layers of coatings. (ES).

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Depth resolved positron annihilation studies on Pd/Si thin film system have been carried out to investigate silicide phase formation and vacancy defect production induced by thermal annealing. The evolution of defect sensitive S-parameter clearly indicates the presence of divacancy defects across the interface, due to enhanced Si diffusion beyond 870 K consequent to silicide formation. Corroborative glancing incidence X-ray diffraction (GIXRD), Auger electron spectroscopy (AES) and Rutherford backscattering spectrometry (RBS) have elucidated the aspects related to silicide phase formation and Si surface segregation.

International Nuclear Information System (INIS)

Magnetic materials such as yttrium iron garnet (YIG) are of great importance for its magneto-optic properties and for their potential applications in the domain of optical telecommunications. The deposition of thin films of YIG, on quartz or GGG (gadolinium gallium garnet) substrate, was performed using radio frequency non reactive magnetron sputtering, followed by high temperature annealing which is needed to enhance the crystallinity of the layers. Rutherford backscattering spectrometry RBS was used to determine the thickness and stoichiometry of the performed layers in order to investigate correlations between growth conditions and the quality of the final material. RBS measurements showed the influence of the deposition time and the temperature substrate on the film growth and its stoichiometry. (author)

International Nuclear Information System (INIS)

The symposium, Polycrystalline Thin Films - Structure, Texture, Properties, and Applications III, was held at the 1997 Materials Research Society Spring Meeting on March 31--April 4 in San Francisco, California. The topics and investigations were interdisciplinary in nature, and ranged from fundamental to technological. Specifically, the work presented in this volume includes film growth, texture and structural evolution, phase transformation, characterization of grain boundaries and interfaces, stress analysis, and works on polycrystalline Si and SiGe films and devices. Fifty four papers were processed separately for inclusion on the data base.

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The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd/sub 2/Si layers.

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We show that the eigenvalue equations describing a cylindrical ideal magnetophydrodynamicsw (MHD) plasma interacting with a thin resistive wall can be put into the standard mathematical form: ??? = ??? ?. This is accomplished by using a finite element basis for the plasma, and by adding an extra degree of freedom corresponding to the electrical current in the thin wall. The standard form allows the use of linear eigenvalue solvers, without additional interations, to compute the complete spectrum of plasma modes in the presence of a surrounding restrictive wall at arbitrary separation. We show that our method recovers standard results in the limits of (1) an infinitely resistive wall (no wall), and (2) a zero resistance wall (ideal wall).

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Oregon State University (OSU) and the Pacific Northwest National Laboratory (PNNL) were funded by the U.S. Department of Energy to conduct research focused on resolving the key technical issues that limited the deployment of efficient and extremely compact microtechnology based heat actuated absorption heat pumps and gas absorbers. Success in demonstrating these technologies will reduce the main barriers to the deployment of a technology that can significantly reduce energy consumption in the building, automotive and industrial sectors while providing a technology that can improve our ability to sequester CO{sub 2}. The proposed research cost $939,477. $539,477 of the proposed amount funded research conducted at OSU while the balance ($400,000) was used at PNNL. The project lasted 42 months and started in April 2001. Recent developments at the Pacific Northwest National Laboratory and Oregon State University suggest that the performance of absorption and desorption systems can be ...

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Alpha particle confinement is necessary for ignition of a D-T tokamak fusion plasma and for first wall protection. Due to high radiation backgrounds and temperatures, scintillators and semiconductor detectors may not be used to study alpha particles which are lost to the first wall during the D-T programs on JET and ITER. An alternative method of charged particle spectrometry capable of operation in these harsh environments, is proposed: it consists of thin foils of electrically isolated conductors with the flux of alpha particles determined by the positive current flowing from the foils. 2 refs., 3 figs.

International Nuclear Information System (INIS)

One of the main problems related to optical thin film materials used in high power laser environments is the catastrophic damage caused to them due to laser irradiation. While the influence of ion bombardment on the optical properties of oxide thin films is now a well understood subject, the morphology and crystalline behaviour of these films under ion incidence is not so well studied. Hence, it is of great importance to investigate the effects of ion bombardment during growth on the microstructure and crystalline behaviour of oxide materials.

International Nuclear Information System (INIS)

Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of #tau#_8-Ce_3Pd_4Si_4 (U_3Ni_4Si_4-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), #tau#_1_6-Ce_2Pd_1_4Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for #tau#_1_8-CePd_1_-_xSi_x (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of #tau#_5-Ce_3PdSi_3 (Ba_3Al_2Ge_2-type, Immm; a=0.41207(1), b=0.43026(1), c=1.84069(4) nm) and #tau#_1_3-Ce_3_-_xPd_2_0_+_xSi_6 ...

International Nuclear Information System (INIS)

Complete text of publication follows. According to the new European regulations (Restrictions of Hazardous Substance Directive), there is an emerging demand for environmental friendly metal treatments instead on formerly used chromate conversion coating technique. The aim of the present investigations was to characterise and compare silicon containing protective thin layers on roughened galvanized steel surfaces (with average roughness of 0.7 microns), using FTIR microscopy and imaging techniques. The silicon containing coatings were produced either by Chemical Vapour Deposition (CVD) or by wet chemical treatment using liquid silane. FTIR techniques offer new possibilities in the characterisations and chemical mapping of differently coated thin films, besides SEM+EDS, AFM, nanoindentation, XPS measurements (P. Nemeth et al., Materials Science Forum, 589 (2008) 433-438). All measurements were carried out by a Varian FTS-7000 spectrometer with a ...

International Nuclear Information System (INIS)

Thermally stable materials with low dielectric constant (k<3.9) are being hotly pursued. They are essential as interlayer dielectrics/intermetal dielectrics in integrated circuit technology, which reduces parasitic capacitance and decreases the RC time constant. Most of the currently employed materials are based on silicon. Low k films based on organic polymers are supposed to be a viable alternative as they are easily processable and can be synthesized with simpler techniques. It is known that the employment of ac/rf plasma polymerization yields good quality organic thin films, which are homogenous, pinhole free and thermally stable. These polymer thin films are potential candidates for fabricating Schottky devices, storage batteries, LEDs, sensors, super capacitors and for EMI shielding. Recently, great efforts have been made in finding alternative methods to prepare low dielectric constant thin films in place of ...