Energy Technology Data Exchange (ETDEWEB)

High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended ...

Science.gov (United States)

_! Packaging, Cleanlines_, Preparation j Handling ..... 35. 'I. 40. WATER ................ , ......... Sterile, High Purity, Ethylene Glycol-Water Solutions. Requirement For . ...

International Nuclear Information System (INIS)

In recent years intergranular stress corrosion cracking has occurred world-wide in the shrink-fitted discs of low pressure turbine rotors made of low alloy steels. Only in a few cases steam impurities such as NaOH, Na_2CO_3, Na_2SO_4, H_2S or NaCl, which initiate SCC, could be found. To clarify the SCC-behaviour experiments on turbine disc steels with different chemical compositions and yield strength were performed in high purity water. The results show, that chemical composition has no effect on the crack initiation. Under high purity water conditions no crack initiation due to stress corrosion cracking is observed on the steel with a yield strength of 850 N/mm"2. On the steel with a yield strength of 1250 N/mm"2 which is not used in service, crack initiation occurs in pure water. But if sharp cracks already exist, crack propagation occurs in both cases. The investigations showed, that stress ...

International Nuclear Information System (INIS)

High purity Fe-50mass%Cr alloys containing (C+N) in the range of 30 to 500 mass ppm were prepared and their corrosion resistance was investigated. Pitting potential in a 3.5mass%NaCl solution at 343K rose with reducing (C+N) content. Alloys containing (C+N) at less than 100 mass ppm did not sustain pitting corrosion. However, alloys containing 500 mass ppm (C+N) corroded severely in 6%FeCl_3+1/20N HCl solutions. Heat treatment at 923K was recognized as influencing corrosion resistance due to precipitation of carbonitrides only in the case of the alloy containing 500 mass ppm (C+N). (orig.).

Science.gov (United States)

... Accession Number : ADA137272. Title : Effects of Yttrium Microalloying on the Epitaxial Grain Growth in Ti-6Al-4V Weld Fusion Zones. ...

Energy Technology Data Exchange (ETDEWEB)

High purity MgAl{sub 2}O{sub 4} spinel specimens irradiated in FFTF-MOTA to very high exposure have been examined by three techniques to determine changes in their optical properties. Significant changes were observed in optical absorption, photoluminescence and radioluminescence.

International Nuclear Information System (INIS)

Large, complex, high purity ceramic shapes are required by a variety of emerging technologies for their electrical insulation and high temperature strength properties coupled with their refractoriness and purity. Ceramic sealant bonding, using crystalline and vitreous sealant materials, has recently shown significant potential for joining technical ceramics to form the required shapes. Materials and techniques for joining technical ceramics including alumina, magnesia, zirconia and thoria are discussed. (orig.).

Energy Technology Data Exchange (ETDEWEB)

In the present work, electrochemical measurements and corrosion tests in NaCl solutions were carried out to study the effect of aging treatments on pitting corrosion behavior in a 8090 alloy and its high purity Al-Li binary alloy analogue. The pitting corrosion characteristics and corrosion resistance of the 8090 alloy have been determined in relation to precipitation microstructures. (orig.).

International Nuclear Information System (INIS)

Nuclear grade production tubing of Alloy 600 was evaluated for stress corrosion cracking (SCC) susceptibility in high purity water at 365, 345, 325, and 290 C. Reverse tube U-bend specimens provided crack initiation data and constant extension rate tests were employed to determine the crack velocities experienced in th crack propagation stage. Initial results indicate that a linear extrapolation of data received from high temperature tests can be used to predict the service life of steam generator tubing that has been plastically deformed or is continually deforming by ''denting.''.

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We investigated the effects of additives to the etching solution of 1 M hydrochloric acid on the electrochemical etching behavior for aluminum electrolytic capacitors, using scanning and transmission electron microscopy, and AC impedance spectroscopy. For the addition of 1 M sulfuric acid or 5% ethylene glycol to the hydrochloric acid solution, the distribution of etch tunnels was more uniform with high density of etch pits compared with that without addition. The highest specific surface area was obtained from the electrolyte with 5% ethylene glycol additive. The correlation of internal morphologies of etched foils with impedance parameters was interpreted by impedance techniques.

Science.gov (United States)

The authors investigated the influence of tartaric acid, which possesses complex-forming properties. In order to establish the optimum system of possible refinement of tellurium, the authors study the kinetics of both the cathodic and the anodic processes. The investigation of processes of discharging-ionization of tellurium from nitric acid electrolytes in the presence of tartrate ions showed the possibility of preparing a nitric-tartaric acid electrolyte which can be used for commercial purposes and from which a high-purity raffinate was obtained from technical tellurium.

International Nuclear Information System (INIS)

The manufacturing of TRIGA fuel rods with low enriched uranium follows in principle the same route as high-enriched uranium. The high purity of the primary metals (uranium, zirconium and erbium) is important for determining the equilibrium metal-hydrogen phases. The impurities from the metal, on the surface and from hydrogen may have an important influence on the hydriding process. This paper presents the aspects of the fuel contamination with oxygen during the manufacturing process of the low enriched uranium fuel. The continuous control of the oxygen concentration in the working zone ensures avoidance of the accidental contamination. Key words: manufacturing, fuel, oxygen, contamination. (authors)

Science.gov (United States)

By gas-source molecular-beam epitaxy, we obtained a device-quality GaInP epitaxial layer lattice matched to (100)-GaAs substrates, with a photoluminescence efficiency comparable to that of a crystal grown by liquid-phase epitaxy. A GaInP/AlInP double heterostructure laser with a GaInP active layer was fabricated, and pulsed lasing operation was achieved at room temperature for, we believe, the first time.

Energy Technology Data Exchange (ETDEWEB)

Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd/sub 2/Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd/sub 2/Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd/sub 2/Si(polycrystalline)/Pd/sub 2/Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd/sub 2/Si films on subsequent furnace annealing is studied.

Energy Technology Data Exchange (ETDEWEB)

Elemental analysis of some medicinal plants used in the Indian Ayurvedic system was performed by employing instrumental neutron activation analysis (INAA) and atomic absorption spectroscopy (AAS) techniques. The samples were irradiated with thermal neutrons in a nuclear reactor and the induced activity was counted by gamma ray spectrometry using an efficiency calibrated high resolution high purity germanium (HPGe) detector. Most of the medicinal plants were found to be rich in one or more of the elements under study. The variation in elemental concentration in same medicinal plants samples collected in summer, winter and rainy seasons was studied and the biological effects of these elements on human beings are discussed. (orig.)

Energy Technology Data Exchange (ETDEWEB)

Ag nanoparticles were prepared in a water-phase system with a mixture of silver-ammonia complex, sodium borohydride, and lauric acid according to molar feed ratio of approximately 6:3:1. The mechanism of preparation and separation by chemical reduction-protection method was explored. The as-synthesized Ag nanoparticles were characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD) and UV-vis spectroscopy, respectively. It was found that the size of high purity Ag particles was ranging from 30 to 50 nm with slight agglomeration. In addition, the as-synthesized wet Ag nanoparticles were dispersed stably in organic vehicle to formulate electrically conductive nanopaste. Upon direct-written and sintered, the array pattern of the nanopaste with the resolution of about 30 {mu}m was achieved with the electrical resistivity in the order of magnitude of 10{sup -5} {Omega} cm.

Energy Technology Data Exchange (ETDEWEB)

A procedure was developed for separating rubidium from irradiated aluminum encapsulated uranium. The separations procedure produces a final ultra-high purity RbCl product for subsequent high performance mass spectrometric analysis. The procedure involves first removing most of the macro-components and fission products by strong base anion exchange using, first, concentrated HCl, then oxalic acid media and second, selectively separating rubidium from alkaline-earth ions and other alkali-metal ions, including cesium, using Bio-Rex-40 cation-exchange resin. The resultant RbCl is then put through a final vacuum sublimation step. Ultra-pure reagents and specially clean glassware are used throughout the procedure to minimize contamination by naturally-occurring rubidium.

Energy Technology Data Exchange (ETDEWEB)

From their genesis by weathering and sedimentation, bauxites, the principal aluminium ores, contain appreciable amounts of uranium and thorium. High resolution gamma spectrometry with a high purity germanium detector was used for an analysis of four industrially used bauxites from Gondama, Sierra Leone; Boke, Guinea; Weipa, Queensland, Australia; Gove, Northern Territory, Australia. Significant differences in uranium to thorium ratios and in activities of the uranium and thorium daughters were observed for the four bauxites. It was found that the bauxite from Gondama, Sierra Leone has an activity of only 10% compared with the others. Red mud tailings from such a bauxite may well be used as an additive to bricks, which is now illegal for normal red mud from more active bauxites. (author).

Energy Technology Data Exchange (ETDEWEB)

Passive films were formed on a high purity Fe-23 Cr alloy in acid sulfate solutions in the presence and absence of chloride ion. The resulting film composition was investigated by Auger depth profiling. The passivated samples were exposed to a 1M NaCl solution at a constant potential slightly above the critical pitting potential, and the current-time transient was measured in order to compare the relative stability of the different films. The results obtained suggest that the formation conditions influence the chloride content of the passive film and the breakdown behavior. Passive films formed in the presence of chloride contain and are slightly less stable towards breakdown. No chloride was found in films formed in sulfate and subsequently exposed to chloride well below the pitting potential.

International Nuclear Information System (INIS)

#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).

Energy Technology Data Exchange (ETDEWEB)

Leafy samples often used as medicine in the Indian Ayurvedic system and vegetables were analyzed for 20 elements (As, Ba, Br, Ca, Ce, Cr, Cs, Co, Eu, Fe, K, La, Na, Rb, Sb, Sc, Sm, Sr, Th, Zn) by employing Instrumental Neutron Activation Analysis (INAA). The samples were irradiated at the 100 kW TRIGA-MAINZ nuclear reactor and the induced activities were counted by gamma ray spectrometry using an efficiency calibrated high resolution High Purity Germanium (HPGe) detector. The concentration of the elements in the medicinal and vegetable leaves and their biological effects on human beings are discussed.

British Library Electronic Table of Contents (United Kingdom)

High purity W and W-0.9La2O3 (wt.%) nanopowders were produced by a wet chemical route. The precursor was prepared by the reaction of ammonium paratungstate (APT) with lanthanum salt in aqueous solutions. High resolution electron microscopy investigations revealed that the tungstate particles were coated with oxide precipitates. The precursor powder was reduced to tungsten metal with dispersed lanthanum oxide. Powders were consolidated by spark plasma sintering (SPS) at 1300 and 1400degreeC to suppress grain growth during sintering. The final grain size relates to the SPS conditions, i.e. temperature and heating rate, regardless of the starting powder particle size. Scanning electron microscopy revealed that oxide phases were mainly accumulated at grain boundaries while the tungsten matrix ...

International Nuclear Information System (INIS)

The study of passive films formed on a nickel base alloy type Inconel 600 is performed by capacitance measurements (Mott-Schottky approach). This research is supported by the passivation study of the alloying elements Ni, Cr, Fe and high purity alloys Ni-Cr, Ni-Fe, Ni-Cr-Fe. The results obtained show that the capacitive behaviour of the Inconel 600 in the passive state is similar to that on a p-n heterojunction to which a barrier zone of nickel oxide is added. The individual or combined action of alloying elements on the development of this kind of electronic structure is discussed. (authors). 5 refs., 6 figs.

Science.gov (United States)

Excitonic transitions in metalorganic vapor phase epitaxially grown In[sub [ital x

International Nuclear Information System (INIS)

Mechanical testing of controlled-purity Ni-xCr-9Fe-yC alloys at 360 C revealed an environmental enhancement in IG cracking and time-dependent deformation in high purity and primary water over that exhibited in argon. Dimples on the IG facets indicate a creep void nucleation and growth failure mode. IG cracking was primarily located at the interior of the specimen and not necessarily linked to direct contact with the environment. Controlled potential CERT experiments showed increases in IG cracking as the applied potential decreased, suggesting that hydrogen is detrimental to the mechanical properties. It is proposed that the environment, through the presence of hydrogen, enhances IG cracking by enhancing the matrix dislocation mobility. This is based on observations that dislocation-controlled creep controls the IG cracking of controlled-purity Ni-xCr-9Fe-yC in argon at 360 C and grain boundary cavitation and sliding results that show the ...

Energy Technology Data Exchange (ETDEWEB)

The solid state reaction between a Pd thin film and a Si substrate produces a single new phase, Pd/sub 2/Si, for temperatures <700/sup 0/C. When the substrate is a single crystal of (111) surface orientation, this process is particularly interesting because the silicide grows epitaxially. Growth of epitaxial interfacial Pd/sub 2/Si was the focus of this study using X-ray diffraction techniques.

International Nuclear Information System (INIS)

This thesis dealt with the metal-organic gas phase epitaxy with nitrogen as carrier gas. For this first by means of three-dimensional modelings of the epitaxy process the influence of the carrier gas on the processes was explained. The optimization of the growth parameter for the whole light-emitting-diode structure in double-hetero arrangement resulted that an a temperature of 770 C and a V/ III-ratio of 150 layers with a high crystal quality could be reached.

Energy Technology Data Exchange (ETDEWEB)

We report the influence of a small quantity of Cl[sub 2], which enhanced the selectivity of silicon-selective epitaxial growth (Si-SEG) in UHV-CVD using Si[sub 2]H[sub 6], on both the epitaxial growth rate and the B-doping properties for each Si and Si[sub 1-x]Ge[sub x] film. The small quantity of Cl[sub 2] inhibited the Si, Ge and B incorporation, while the selectivity was enhanced. However, it was found, in the case of Si[sub 1-x]Ge[sub x]-SEG using Cl[sub 2], that the reduction ratio of both the growth rate and the B incorporation were smaller than those of Si-SEG with the selectivity still more enhanced. (orig.)

International Nuclear Information System (INIS)

Measurements of gamma-ray spectra, following the thermal neutron fission of "2"3"5U have been made using a high purity germanium detector at the University of Massachusetts Lowell (UML) Van de Graaff facility. The gamma spectra were measured at delay times ranging from 0.2 s to nearly 10000 s following the rapid transfer of the fission fragments with a helium-jet system. On the basis of the known gamma transitions, forty isotopes have been identified and studied. By measuring the relative intensities of these transitions, the relative yields of the various precursor nuclides have been calculated. The results are compared with the recommended values listed in the ENDF/B-VI fission product data base (for the lifetimes and the relative yields) and those published in the Nuclear Data Sheets (for the beta branching ratios). This information is particularly useful for the cases of short-lived fission products with lifetimes of the order of fractions ...

Energy Technology Data Exchange (ETDEWEB)

Mixed-conducting Sr-Fe-Co oxides have potential applications in dense ceramic membranes for high-purity oxygen separation and/or methane conversion to produce syngas (CO + H{sub 2}), because of their combined high electronic/ionic conductivity and significant oxygen permeability. We studied the crystal structure and microstructure of the system in X-ray diffraction experiments and by using scanning electron microscopy, respectively. Thermogravimetric analysis was conducted on the SrFeCo{sub 0.5}O{sub x} sample in environments of various oxygen partial pressures (pO{sub 2}). Conductivity increased while weight decreased with increasing temperature. Activation energy decreased while conductivity increased with increasing pO{sub 2}. The pO{sub 2}-dependent conducting behavior of the SrFeCo{sub 0.5}O{sub x} system can be understood by considering the trivalent-to-divalent transition of transition-metal ions.

International Nuclear Information System (INIS)

Silicon nitride-based ceramics behavior is strongly influenced by microstructural parameters, which, in turn are determined by chosen densification method. Highly covalent Si-N bond hind are the silicon nitride densification. Therefore, metal oxides are used in order to get high density. However, such oxides must be carefully selected, because they affect the general macroscopic properties of sintered bodies. In the present work, the viability of rare earth concentrate use to produce #beta#--Si_6_-_xAl_xO_xN_8_-_x and its effect on mechanical properties of the sintering ceramics are studied. Additive composition, heating rate, soaking time and sintering temperature were took as variables. Hardness, fracture toughness, Young's modulus and flexural strength were investigated. Lattice parameter compositional dependence and secondary phases crystallized after past-sintering heat treatment were also determined. The results show that rare earth concentrate works very well as sintering aid, ...

Energy Technology Data Exchange (ETDEWEB)

The Ohio State University Research Reactor (OSURR) is licensed to operate at a maximum power level of 500 kW. A pool-type reactor using flat-plate, low enriched fuel elements, the OSURR provides several experimental facilities including two 6-inch i.d. beam ports, a graphite thermal column, several graphite-isotope-irradiation elements, a pneumatic transfer system (Rabbit), various dry tubes, and a Central Irradiation Facility (CIF). The core arrangement and accessibility facilitates research programs involving material activation or core parameter studies. The OSURR control room is large enough to accommodate laboratory groups which can use control instrumentation for monitoring of experiments. The control instrumentation is relatively simple, without a large amount of duplication. This facilitates opportunities for hands-on experience in reactor operation by nuclear engineering students making reactor parameter measurements. For neutron activation analysis and analyses of natural ...

International Nuclear Information System (INIS)

Nanocrystalline Fe75Si20M5 (M = Al, B and Cr) powders were synthesized by mechanical alloying in a planetary ball mill from high purity elemental powders. Evolution of non-equilibrium solid solutions of ?-Fe[Si,(Al, B, Cr)] with a nanocrystalline structure was accompanied by the introduction of a large number of dislocation defects in the course of the milling process. Fe sites get substituted by Si and M (M = Al, B, Cr) atoms during the milling process. The structural change and the resulting disorder are reflected in the changes in the lattice parameter and average magnetic moment of the powders milled for various time periods. The effective magnetic anisotropy increases linearly with the milling time. An increase in coercivity with increasing milling time was observed which could be attributed to the introduction of dislocations and the reduction in the powder particle size during milling. The presence of dislocations and grain boundaries ...

International Nuclear Information System (INIS)

The half-life of "1"0"9Cd was measured by following the decay of sources from a radiochemically pure solution with two different measuring systems: an ionisation chamber and a high-purity germanium (HPGe) detector. The measurements were performed over a period of 3.6 years, i.e. about 2.8 half-lives of "1"0"9Cd. The resulting half-life values and detailed uncertainty budgets (k=1) are presented for both systems. The result obtained with the ionisation chamber, 462.36 (33) days, and the one obtained with the HPGe detector, 461.92 (76) days, are mutually consistent. The weighted mean of our measured values, T_1_/_2("1"0"9Cd)=462.29 (30) days, is consistent with the currently recommended values of 461.4 (12) days and 462.0 (3) days. From a set of selected experimental values published after 1970, a 'partially weighted mean' of T_1_/_2("1"0"9Cd)=462.36 (39) days was calculated. More measurements are needed to resolve the discrepancies among literature data and to ...

Energy Technology Data Exchange (ETDEWEB)

The electrical conductivity of Vitox-alumina (99.2%), Wesgo-alumina (99.9%) and AlN (99.6%) has been measured during and after irradiation with an experimental set-up which allows fusion relevant loading conditions. All irradiations were performed in high vacuum at 450 C using a 104 MeV {alpha}-particle beam with an applied DC electric field of 100 kV/m. In the high purity Vitox-alumina the in-situ and postirradiation bulk conductivities {sigma} and {sigma}{sub 0} show the highest irradiation induced electrical breakdown ever observed. The saturation level near 4 x 10{sup -2} ({Omega}m){sup -1}, reached already after 0.015 dpa (O-sublattice), is already above the critical value necessary to avoid MHD pressure drop with 10 {mu}m coatings in flowing liquid metal coolants. Under the same conditions no radiation induced electrical degradation at all has been found in Wesgo-alumina and AlN. (orig.).

International Nuclear Information System (INIS)

Recent nuclear power plants require high purity water to protect nuclear reactors or steam generators from SCC and maintain in good condition. In this connection, it is especially important to minimize sulfate, which is a corrosive chemical originated from oxidative degradation of cation exchange resins during operation. Recently, uniform particle size (UPS) strong acid cation gel resin with 14% cross-linkage, which has excellent stability against oxidization, has been applied to several condensate purification systems. For further improvement of water quality, some methods for changing the configuration of condensate demineralizer's resin bed have been examined. For example, these methods correspond to anion under layer and cation over layer. We have tested these methods by cold column tests. Furthermore, we have developed the newly anion exchange resin having higher efficiency and capacity for absorbing leachables from cation exchange resins. ...

Energy Technology Data Exchange (ETDEWEB)

Substantial roles of precipitates such as Zr-Fe-Cr type intermetallic compounds on uniform corrosion and hydrogen pickup of zirconium alloys in pure water autoclave tests were investigated from an electrochemical point of view. In the previous paper, corrosion mechanism was elucidated by the anodic protection-precipitates degradation model. This paper describes the roles on hydrogen pickup. 633 K pure water autoclave test was performed on high purity zirconium, Zr-0.2Fe, Zr-0.2Cr, and Zr-0.1Fe-0.1Cr alloys. Hydrogen analysis after the corrosion test showed that hydrogen pickup ratio of Zr-0.2Fe alloy was about 80%. It was much higher than about 30% of pure Zr and about 10% of both Zr-0.2Cr and Zr-0.1Fe-0.1Cr alloys. Larger hydrogen content was introduced into Zr-0.2Fe alloy than the other ones by the cathodic hydrogen charging under coulombic equivalence. The precipitates at metal-oxide interface could act not only as cathodic sites in the ...

Energy Technology Data Exchange (ETDEWEB)

Theoretical work supported by this grant has lead to the concept of the specific pinning force Q and the development of new methods to sum elementary interaction forces to find Q. Pinning due to changes in transition temperature or thermodynamic critical field in thin layers (e.g., a grain boundary), is greatly reduced due to the proximity effect and the stress field interaction due to the dislocations in the grain boundary has been shown to be negligible. The crystalline anisotropy (CA) and electron scattering (ES) interactions have been computed for the first time for an arbitrary boundary. Experiments on niobium bicrystals, polycrystalline niobium thin foils doped with oxygen, lead-bismuth alloy thin films and lead-bismuth alloy films in which either lead or thallium has been allowed to diffuse down the grain boundaries and out into the grains provide evidence that confirms the predictions of the theory. These results suggest that further improvements in grain boundary pinning in ...

Energy Technology Data Exchange (ETDEWEB)

In order to gain a wider knowledge of corrosion phenomena in OFHC (oxygen free high conductivity) copper pipes of the stator cooling circuit of a power plant turboalternator, a research program was laid out which is based on the use of an experimental loop simulating real operating conditions as closely as possible. The samples examined were either copper foils or hollow conductors of the type that is normally used in the stator cooling system, and the circulating fluid was high purity water with controlled O/sub 2/, H/sub 2/ and C0/sub 2/ contents. Investigations were focused on the kinetics of O/sub 2/ removal through catalytic resins covered with metallic palladium (at different temperatures and pressures) and on the kinetics of CO/sub 2/ removal through mixed bed resins. Subsequently, attention was directed to the corrosion of copper (in the form of foils or hollow conductors) under different experimental conditions simulating either ...

CERN Document Server

The current primary standards at NPL for the measurement of absorbed dose to water in high energy photon and electron beams are graphite calorimeters. However, the quantity of interest in radiation dosimetry is absorbed dose to water. Therefore, a new absorbed dose to water standard based on water calorimetry has been developed for use in high energy photon and electron beams. The calorimeter operates at 4 deg C, with temperature control being provided by liquid cooling. The sealed glass inner vessel of the calorimeter was designed to minimise the effect of non-water materials on the measurement of absorbed dose. The temperature sensing thermistor probes were designed and constructed so that glass is the only material in contact with high purity water inside the vessel. Initial measurements of absorbed dose to water made in 6, 10, and 19 MV photons, and 16 MeV electrons agreed, within the measurement uncertainties of approximately 1.5% (95% ...

International Nuclear Information System (INIS)

AlGaInP epitaxial layers grown at 690 degree C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the #left brace#111#right brace# directions. The ordered regions appear as plate-like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan-view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, ...

International Nuclear Information System (INIS)

The AlGaInP materials system has recently supported the development of a variety of visible diode laser devices at wavelengths ranging from yellow to red. Presently, the majority of published results are with materials prepared by organometallic vapor phase epitaxy (OMVPE). Many issues with such materials exist, including impurity doping, the role of crystal ordering, defect formation during epitaxial growth, and the proper quantum well heterostructure design required for best device results. This paper addresses these topics and reviews the present state of the art, and projects the anticipated results when the materials' problems have been solved.

Energy Technology Data Exchange (ETDEWEB)

This thesis dealt with the metal-organic gas phase epitaxy with nitrogen as carrier gas. For this first by means of three-dimensional modelings of the epitaxy process the influence of the carrier gas on the processes was explained. The optimization of the growth parameter for the whole light-emitting-diode structure in double-hetero arrangement resulted that an a temperature of 770 C and a V/ III-ratio of 150 layers with a high crystal quality could be reached.

Energy Technology Data Exchange (ETDEWEB)

LaAlO{sub 3} and CeO{sub 2} films have been successfully grown using sol-gel precursors. LaAlO{sub 3} precursor solution has been prepared from a metal alkoxide route and spun-cast on a SrTiO{sub 3} (100) single crystal to yield an epitaxial film following pyrolysis at 800{degrees}C in a rapid thermal annealer. A CeO{sub 2} precursor solution has been made using both an aqueous and an alkoxide route.

International Nuclear Information System (INIS)

The growth of epitaxial MnO(100) and MnO(111) layers on Pd(100) surface has been investigated by spot-profile analysis low-energy electron diffraction, dynamic atomic force microscopy, photoemission and high-resolution electron energy loss spectroscopy, and density functional theory. We have found that despite the large lattice mismatch to the Pd(100) substrate, the MnO(100) layers are kinetically stabilized at low temperatures (?350 deg. C) and at oxygen pressures between 2x10-7 and 5x10-7 mbar. Annealing in ultrahigh vacuum at 650 deg. C or, alternatively, deposition of manganese metal in oxygen pressure -7 mbar causes the transformation of the MnO(100) to a polar MnO(111) surface, which is decorated by triangular pyramids with (100) side facets. It is suggested that the growth of MnO(111) layers is energetically preferred over MnO(100) due to the epitaxial stabilization at the metal-oxide interface.

International Nuclear Information System (INIS)

The DLTS technique was employed to study deep defect centers in Si doped epitaxial layers of Al_0_._3_7Ga_0_._1_6In_0_._4_7P grown by MOCVD as a part of epitaxial structure GaAs/AlGaInP/GaAs on GaAs substrates. A high concentration of DX centers located in a region near the inverted interface GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P was found. The width of this region with the maximum DX center concentration ranges from 5 to 20 nm. By filling the DX centers in the whole region, the activation energy for electron emission was found to be 0.48 eV. However, it is shown for the first time, that the activation energy of the DX center increases with increasing the distance from the GaAs/Al_0_._3_7Ga_0_._1_6In_0_._4_7P inverted interface. A nonuniform of the DX center concentration on the wafers is also observed. The concentration varies in the range of 1#centre dot#10"1"7 cm"-"3 - 10"1"8 cm"-"3. (author)

International Nuclear Information System (INIS)

Electron-spin polarization in excess of 70% has been observed in photoemission from a 0.1-#mu#m-thick epitaxial layer of In_xGa_1_-_xAs with x#approx#0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single-band transition.

International Nuclear Information System (INIS)

Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterization included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidizing and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton. (author)

Energy Technology Data Exchange (ETDEWEB)

Stability and decomposition of PtSi, NiSi, and PdSi in contact with single crystal or amorphous Si is examined. PtSi, PdSi and NiSi are thermally stable both with Si, but are unstable in contact with metal film. It is shown that epitaxial Si layers can be obtained using both Pd and Al as metal film and layers can be electrically doped by the addition of a doping layer to the thin film structure prior to the heat treatment or by inclusion of Al atoms so that n/sup +/ and p/sup +/ conductivity can be achieved in the grown epilayer. The effects of impurities, substrate orientation on the growth kinetics are also discussed. (LEW)

Energy Technology Data Exchange (ETDEWEB)

The following is the optimized pulsed laser deposition (PLD) procedure by which we prepared the final samples that were sent to LLNL. These samples are epitaxial multilayer structures of Si/YSZ/CeO/NSMO, where the abbreviations are explained in the following table. In this heterostructure, YSZ serves as a buffer layer to prevent deleterious chemical reactions, and also serves to de-oxygenate the amorphous SiO{sub 2} layer to generate a crystalline template for epitaxy. CeO and BTO serve as template layers to minimize the effects of thermal and lattice mismatch strains, respectively. More details on the buffer and template layer scheme are included in the manuscript [Yong et al., 2008] attached to this report.

Science.gov (United States)

The phase stability of silicides of Ni, Pt and Pd in contact with single crystal or amorphous silicon is examined. The presence of a particular silicide phase is identified by X-ray diffraction, and Rutherford backscattering is used to study composition. It is concluded that Pt or Pd silicides are suitable for Schottky barriers. Layers of silicon can be grown quickly by solid phase epitaxy at temperatures of 300-500C and using an intermediate metal film. Experimental results are reported. Doped layers have been obtained which have electrical characteristics suitable for the junctions in solar cells. The effects of impurities and orientation of the substrate on the growth kinetics are discussed.

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Buried ridge stripe lasers have been grown on InP in two steps by gas source molecular beam epitaxy. The active structure consists of a compressively strained layer multi quantum well with an equivalent wavelength emission at 1.5 [mu]m. The stripe was defined by reactive ion etching. A threshold current of 22 mA was reproducibly obtained on a laser length of 500 [mu]m. A CW output power of 48 mW per facet was achieved. In addition, preliminary accelerated aging tests have shown the high reliability the structure. (orig.)

International Nuclear Information System (INIS)

Full text: Production: This radio iodine produced by three methods: 1) Wet method: The irradiated tellurium is dissolved in an oxidizing mixture which also converts iodine in to iodide. This is a chemical method and iodine that it produced with this method has low purity and efficiency. 2). Dry Method: The irradiated tellurium is dissolved in furnace (750 deg. C) with sublimation method and iodine absorbed in sodium solution . In this case we have more than 99.5 % purity and 80 % efficiency. We are using this type in Iran. 3) Fission fragment method: In this case the iodine separated from fission fragment directly and we have high purity (career free) and specific activity of iodine. Application: Iodine is a versatile tracer element. It is used to determine thyroid cancer metastases, and size, shape and activity of the thyroid gland. Critical organ of iodine is thyroid gland. One of the common diagnostic procedures for determining thyroid ...

International Nuclear Information System (INIS)

Three copper-based alloys, CDA 102 (oxygen-free, high-purity copper), CDA 613 (aluminum bronze), and CDA 715 (Cu-30Ni), are candidates for the fabrication of high-level radioactive-waste disposal containers. Waste will include spent fuel assemblies from reactors as well as borosilicate glass, and will be sent to the prospective repository site at Yucca Mountain in Nye County, Nevada. The decay of radionuclides will result in the generation of substantial heat and in fluxes of gamma radiation outside the containers. In this environment, container materials might degrade by atmospheric oxidation, general aqueous phase corrosion, localized corrosion (LC), and stress corrosion cracking (SCC). This volume is a critical survey of available data on pitting and crevice corrosion of the copper-based candidates. Pitting and crevice corrosion are two of the most common forms of LC of these materials. Data on the SCC of these alloys is surveyed in Volume 4. Pitting usually ...

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Some of the results of property measurements of CeO{sub 2} and its solid solutions were reviewed. The deviation from stoichiometry of undoped and doped CeO{sub 2} was presented in several figures, which suggested that CeO{sub 2} fired at high temperatures in air might be nonstoichiometric in some degree. At low temperatures, the deviation from stoichiometry in doped CeO{sub 2} is higher than undoped CeO{sub 2}. As another interesting property, CeO{sub 2} shows high solubility to trivalent cations such as rare earth elements. A possible reason behind this high solubility was presented. The nonstoichiometric defect in undoped CeO{sub 2} and the trivalent cation in solid solution with CeO{sub 2} have to be compensated by other defects. The possible defect structures in this solid solution were reviewed and the most probable structure was chosen based on density measurement and impurity dependence of oxygen diffusion coefficient. Finally the oxygen diffusion coefficients in this oxide ...

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Post-irradiation annealing was used to help identify the role of radiation-induced segregation (RIS) in irradiation-assisted stress corrosion cracking (IASCC) by preferentially removing dislocation loop damage from proton-irradiated austenitic stainless steels while leaving the RIS of major and minor alloying elements largely unchanged. The goal of this study is to better understand the underlying mechanisms of IASCC. Simulations of post-irradiation annealing of RIS and dislocation loop microstructure predicted that dislocation loops would be removed preferentially over RIS due to both thermodynamic and kinetic considerations. To verify the simulation predictions, a series of post-irradiation annealing experiments were performed. Both a high purity 304L (HP-304L) and a commercial purity 304 (CP-304) stainless steel alloy were irradiated with 3.2 MeV protons at 360 deg. C to doses of 1.0 and 2.5 dpa. Following irradiation, post-irradiation ...

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Metal hydrode stores are used as fuel tanks in vehicles or as stationary stores of high-purity hydrogen. Equilibrium isotherms at low pessures were measured in order to validate the laws of Henry or Sievert for hydrogen uptake of the alloy Ti{sub 0.98}Zr{sub 0.02}V{sub 0.43}Fe{sub 0.09}Cr{sub 0.05}Mn{sub 1.5} (patented by Daimler Benz AG, code DB5800). The laws were to provide information on whether hydrogen uptake is atomic or molecular and on the conditions in which isothermal measurements are possible. (orig.) [Deutsch] Metallhydridspeicher werden als Kraftstofftank in Fahrzeuge oder als stationaere Speicher zur Bereitstellung von Reinstwasserstoff verwendet. Fuer diese Arbeit wurden die Gleichgewichtsisothermen bei kleinen Druecken vermessen, um die Gesetze von HENRY oder SIEVERT fuer die Wasserstoffaufnahme in der Legierung Ti{sub 0.98}Zr{sub 0.02}V{sub 0.43}Fe{sub 0.09}Cr{sub 0.05}Mn{sub 1.5} zu pruefen. Anhand dieser Gesetze ist zu entscheiden, ob die ...

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Experimental excitation functions for deuteron-induced reactions up to 20 MeV on high purity natural hafnium were measured with the activation method using a stacked foil irradiation technique. Metallic hafnium foils with thickness of 10 #mu#m were stacked together with 50 #mu#m thick aluminium and 12 #mu#m thick titanium foils. The aluminium foils served as energy absorber while the titanium foils were used to monitor the energy and intensity of the bombarding deuteron beam. From a detailed remeasurement of the complete excitation function of the "n"a"tTi(d,x)"4"8V monitor reaction it was possible to adopt the proper incident energy and beam intensity by comparing the results with the recommended values. High resolution off-line gamma-ray spectrometry was applied to assess the activity of each foil. From the measured activity independent and/or cumulative elemental or isotopic cross section data for production of Ta, Hf and Lu radioisotopes by ...

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Epitaxial cobalt disilicide (CoSi{sub 2}) layers are grown on n-Si{sub 0.83}Ge{sub 0.17}/n-Si(001) using a sacrificial Si capping layer at the growth temperature T{sub s}=650 deg. C by reactive chemical vapor deposition using cyclopentadienyl dicarbonyl cobalt (Co({eta}{sup 5}-C{sub 5}H{sub 5})(CO){sub 2}). Structural and electrical properties of epi-CoSi{sub 2}/Si{sub 0.83}Ge{sub 0.17}/Si(001) were measured by transmission electron microscopy, X-ray diffraction, Auger electron spectroscopy and sheet resistance measurement as a function of annealing temperature. The combined results showed that the epitaxial CoSi{sub 2} phase by the reaction of Co with the Si capping layer was formed in the as-grown layers. Rapid thermal anneals for the investigation of thermal stability of the as-grown layers showed good thermal stability of the epitaxial CoSi{sub 2} layers with the low sheet resistance value as low as congruent with 4.4 ...

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We have measured the oxygen positions in LaNiO{sub 3} films to elucidate the coupling between epitaxial strain and oxygen octahedral rotations. The oxygen positions are determined by comparing the measured and calculated intensities of half-order Bragg peaks, arising from the octahedral rotations. Combining ab initio density-functional calculations with these experimental results, we show how strain systematically modifies both bond angles and lengths in this functional perovskite oxide.

Science.gov (United States)

Partial Contents: Ternary Compounds; Granular Superconductors; Superconductivity in (SN)x and its Halogen Derivative (SNBr0.4)x; Studies of cuCl at Elevated Pressures; Superconducting Properties of Hydride Systems; Thin Film Superconducting Materials Research; Synthesis of Superconducting Nb3Si using High Pressures; Synthesis of Unstable A-15 Compounds by Epitaxial Recrystallization of Ion Implanted Layers; and Sputtering of Nb3Si.

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For a wider application of GaAs single crystals for semiconductor devices a cheaper process to grow crystals with high purity and low dislocation density is required. According to todays knowledge the Czochralski method with a hot wall vessel should be the choice. The temperature of the vessel has to be 700deg C to avoid condensation of arsenic which vapourizes from the 1240deg C hot melt. Arsenic vapour is very agressive against all metals. Therefore the corrosion resistance of metals and alloys with a high melting point and also ceramics has been tested. All the alloys under investigation are corroded severely so that they have to be excluded as a material for the vessel. The metals tantalum, molybdenum and tungsten are more resistent, titanium forms initially a thick protection layer and further corrosion is greatly reduced. The ceramics investigated (TiB{sub 2}; ALN; Makor; BN) are not attacked by arsenic though they may store some arsenic. ...

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The strain dependence of Si-Ge interdiffusion in epitaxial Si/Si{sub 1-y}Ge{sub y}/Si heterostructures on relaxed Si{sub 1-x}Ge{sub x} substrates has been studied using secondary ion mass spectrometry, Raman spectroscopy, and simulations. At 800 and 880 deg. C, significantly enhanced Si-Ge interdiffusion is observed in Si/Si{sub 1-y}Ge{sub y}/Si heterostructures (y=0.56, 0.45, and 0.3) with Si{sub 1-y}Ge{sub y} layers under compressive strain of -1%, compared to those under no strain. In contrast, tensile strain of 1% in Si{sub 0.70}Ge{sub 0.30} layer has no observable effect on interdiffusion in Si/Si{sub 0.70}Ge{sub 0.30}/Si heterostructures. These results are relevant to the device and process design of high mobility dual channel and heterostructure-on-insulator metal oxide semiconductor field effect transistors.

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A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ? 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO(2) film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ? 90 nm fabricated by this method operated at room temperature. The growth method was also used to fabricate AlGaSb films of high quality. Our method ...

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The utilization of GaAs in photovoltaic (PV) applications has been hindered by the cost of substrates and processing. This paper examines the cost effectiveness of GaAs cells for use in concentrator modules when produced at the 10 to 50 MW level per year. Information on costs associated with substrates, epitaxial processing, and subsequent device fabrication will be compared to allowable costs as projected by the US Department of Energy (DOE). The high cot of GaAs solar cells can be mitigated by use of low-cost substrates or high-concentration systems. The costs then can be accommodated when the production level is sufficiently high to take advantage of economies of scale in device processing and substrate price benefits when procured at high volumes. We have found that development of processing equipment, both for the epitaxial growth and device processing, is the key to obtaining production costs consistent with DOE goals. Successfully ...

Science.gov (United States)

Stresses commonly present in AlGaAs/GaAs laser heterostructures were reduced using Molecular Beam Epitaxy grown Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ cladding layers. The Al/sub 0.3/Ga/sub 0.7/P/sub 0.01/As/sub 0.99/ alloy was grown using an incident P/sub 2/ flux of roughly-equal1 x 10/sup 14//cm/sup 2/ indicating a sticking coefficient of 0.1 at a substrate temperature of 600 /sup 0/C. X-ray automatic Bragg angle control curvature measurements were used to monitor the residual heteroepitaxial stress. Broadened double crystal x-ray linewidths indicated the occurrence of alloy grading and broadened interfaces. The effects of P concentration and film thickness on stress and on the existence of a misfit dislocation grid are discussed.

International Nuclear Information System (INIS)

The excess energy of several III-V and II-VI strained-layer semiconductor superlattices (AC)_p(BC)_p is studied as a function of the repeat period p and orientation G=[001], [110], [111], and [201], using first-principles calculations. We discover a number of universal features, including the predicted instability for nearly all p's and G's with respect to bulk disproportionation, the identification of chalcopyrite as a metastable ordered structure, and the stability of all thin epitaxial [110] and [201] and most common-anion [001] superlattices relative to coherent phase separation.

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Transient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 +/- 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 +/- 0.2 eV, but no loops formed. 8 figures, 7 references.

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An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and than the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy. (author)

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X-ray photoemission spectroscopy has been used to measure the valence band offset {Delta}E{sub v} for the AlP/GaP (001) heterojunction interface. The heterojunction samples were prepared by molecular-beam epitaxy. A value of {triangle}E{sub v}=0.43 eV is obtained (staggered band alignment, with AlP valence band below that of GaP). 24 refs., 8 figs., 1 tab.

International Nuclear Information System (INIS)

The application of medium energy ion scattering in combination with channelling and blocking to the study of the initial stages of palladium silicide formation is discussed. After a brief description of the experimental arrangement and method, the effects on the Rutherford backscattering spectra of depositing small quantities of palladium on clean Si(111) are reported. The uniformity and thermal stability of thin palladium silicide films grown at room temperature were measured. Finally, channelling and blocking results were used to carry out a structural analysis of thin epitaxial Pd_2Si layers. (Auth.).

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We have investigated the stability and catalytic activity of epitaxial overlayers of rhodium on Au(111) and Pd(111). Both surfaces show a strong affinity for hydrogen. We have calculated the energy of adsorption both for a strongly and a more weakly adsorbed species; the latter is the intermediate in the hydrogen evolution reaction. Both the energy of activation for hydrogen adsorption (Volmer reaction) and hydrogen recombination (Tafel reaction) are very low, suggesting that these overlayers are excellent catalysts. PMID:21847482

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Focussed ion beam (FIB) technology has the advantage of being a maskless process compatible with UHV processing. This makes it attractive for use in in situ processing and has been applied to the fabrication of various mesoscopic structures. The present paper reviews these results whilst putting emphasis on in situ processing by a combined FIB and molecular beam epitaxy system. The typical performance of present FIB systems is also presented. In order to utilize the potential advantages of FIB processing, reduction of damage and improvement of throughput are important, and much effort has been devoted to developing processing techniques which require a reduced dose. The importance of low-energy FIB is discussed. (author).

International Nuclear Information System (INIS)

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub ...

International Nuclear Information System (INIS)

We studied the epitaxial growth of iron silicide (#epsilon#-FeSi,#beta#-FeSi_2, and #alpha#-FeSi_2) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The #epsilon#-FeSi or #alpha#-FeSi_2 nanodots were epitaxially grown in a dome shape with an average size of #approx#5 nm and an ultrahigh density (>10"1"2 cm"-"2) on the surface. We formed #approx#2-nm high and #approx#8-nm wide #beta#-FeSi_2 nanodots in a dome shape with a density of #approx#5x10"1"1 cm"-"2 on the surface. Cross-sectional TEM images revealed that the #beta#-FeSi_2 growth continued beneath the Si surface. The part of the #beta#-FeSi_2 nanodot ...

Energy Technology Data Exchange (ETDEWEB)

Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack formation. By a simultanous optimization of the other epitaxy and ...

International Nuclear Information System (INIS)

This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe-MgO-Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the ...

International Nuclear Information System (INIS)

A transient-enhanced diffusion has been observed during the furnace or rapid thermal annealing of ion-implanted silicon. We have studied this transient in detail and show that, for doses of Group V dopants sufficient to amorphize the silicon, it arises from the trapping of interstitials by dopant atoms during implantation. These are retained during solidphase-epitaxial (SPE) growth, but can be released by additional thermal processing to cause the observed transient and the formation of a band of extended defects. We have measured the enhanced diffusion coefficients and the duration of the transient for Sb-implanted Si by careful furnace annealing experiments. We obtain general expressions which predict the effects of the transient during any thermal processing based on SPE growth (furnace, CW laser, or rapid thermal annealing). We show that there is no analogous mechanism of vacancy trapping by Group III elements.

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The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As/sup +/ implanted Si. 12 references, 12 figures.

International Nuclear Information System (INIS)

The authors have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. The authors show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. They discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As"+ implanted Si. 12 references, 12 figures.

British Library Electronic Table of Contents (United Kingdom)

The light-emitting properties of cubic silicon carbide films grown by vacuum vapor phase epitaxy on Si(100) and Si(111) substrates under conditions of decreased growth temperatures (T gr ? 900?700?C) have been discussed. Structural investigations have revealed a nanocrystalline structure and, simultaneously, a homogeneity of the phase composition of the grown 3C-SiC films. Photoluminescence spectra of these structures under excitation of the electronic subsystem by a helium-cadmium laser (?excit = 325 nm) are characterized by a rather intense luminescence band with the maximum shifted toward the ultraviolet (?3 eV) region of the spectral range. It has been found that the integral curve of photoluminescence at low temperatures of measurements is split into a set of Lorentzian components. Th...

International Nuclear Information System (INIS)

The present article will review recent advances in focused ion beam (FIB) technology. With increasing demands for scale of integration, microfabrication technology is becoming more important and various new microfabrication tools and processing techniques are desired. FIB is one of the promising tools for future microfabrication technology. This provides maskless patterning capability, which is of importance for process simplification, nanofabrication and in the development of in situ vacuum processing. In situ vacuum processing systems are being developed by combining FIB and a molecular beam epitaxy system. Radiation damage may limit applications of FIB. However, it was demonstrated that low energy FIB (<1 keV) with very high brightness was reached and promising results for low damage processing have been obtained. (orig.).

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Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)

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This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

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Analytical TEM and high resolution TEM were used in the microstructural characterization of hot-press sintered Si_3N_4-SiC platelets composites. The quantity of sintering additives, Er_2O_3 and AlN, was varied to produce different matrices, e. g. Si_3N_4, #beta#'+#alpha#'-Sialon and #alpha#'-Sialon. Detailed analysis of platelet-sialon matrix interfaces revealed the presence of AlN polytypoids. The polytypoids nucleate preferentially onto the (0001) plane of SiC and growth epitaxially in several ten nanometer layers contributing in this way to crystallize, partially, the matrix intergranular glass pockets contacting the platelets. Possible applications of the phenomena to microstructural control, grain boundary phase control and enhanced creep resistance are discussed. (orig.).

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This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

International Nuclear Information System (INIS)

The initial growth process and surface structure of thin Pd(silicide) films on clean Si(111)-7x7 surfaces have been studied by low energy ion scattering (ISS) and LEED-Auger techniques. Considerable reaction between Pd and Si at room temperature is observed to extend up to 25 ML thickness of deposited Pd. Heat treatment of the room temperature film produced epitaxial silicide Pd_2Si(0001) films covered with the accumulated elementary Si layers of 1-2 ML thickness. Deposition of 1/3 ML Pd onto a heated substrate gives a Pd-embedded ordered surface of Si(111)-#sq root#3x#sq root#3R30"0, the feature being similar to the cases of Ag, Au/Si(111) systems. (orig.).

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Nanoscale islands of Cu2O have been synthesized on single-crystal SrTiO3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (OPA-MBE). Island growth location has been controlled by using an ex-situ Ga+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. Analysis of Cu2O dot growth on unmodified substrate regions revealed an evolution of dot size and array density. Atomic force microscopy studies show that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of islands. Islands initially formed in the FIB-generated surface topography and filled those features before nucleating on neighboring unmodified surface regions.

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Nanoscale islands of Cu?O have been synthesized on single crystal SrTiO? (100) substrates using oxygen plasma assisted molecular beam epitaxy (MBE). Island growth location has been controlled by using an ex-situ Ga? focused ion beam (FIB) to modify the growth surface in discrete locations prior to island sythesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex-situ AFM study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.

International Nuclear Information System (INIS)

The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB) and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB modified spots on MBE grown GaAs was fabricated. Thereafter, an in situ annealing step followed by InAs deposition was performed. The InAs QDs were preferentially formed in the holes generated by the FIB. The influences of ion dose, annealing parameters, and InAs amount were investigated. With optimized parameters, the authors observe more than 50% single dot occupancy per holes. Photoluminescence spectra confirm the good optical quality of the QDs.

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We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of {approx}2.1 eV.

Science.gov (United States)

The use of Auger electron spectroscopy (AES) combined with in situ sputter etching for revealing the metallurgy of the metal-semiconductor interface is presented. The physical basis, measurement techniques, and data interpretation for Auger analysis of thin-film structures are briefly reviewed. Results of a detailed study of an alloyed multilayered contact (Ni/Au-Ge) on n-type epitaxial GaAs are summarized to illustrate how electrical and metallurgical contact properties can be correlated using AES. In addition, the results of a study of the growth kinetics and chemical phase identification of palladium silicide on single-crystal Si is given, as well as the initial results of a study of aluminum-palladium silicide interaction at elevated temperature. (auth)

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The magnetic susceptibility of GaAs samples containing a large concentration of native defects was investigated by dc magnetization measurements. Thin GaAs films grown by molecular-beam epitaxy at very low temperatures and bulk GaAs:S samples irradiated with fast neutrons have been studied. For all samples, the susceptibility follows a Curie-Weiss law, indicating the presence of localized magnetic moments. These moments are attributed to unpaired spins located at the native defects. Negative Curie-Weiss temperatures found for both neutron-irradiated and low-temperature-grown GaAs is a clear manifestation of an antiferromagnetic interaction between the moments. The presence of a highly inhomogeneous distribution of native defects has to be assumed to account for the observed antiferromagnetic ordering.

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X-ray photoelectron spectroscopy and ex situ scanning tunneling microscopy measurements have been combined to investigate the thickness, the chemical composition, and the structure of passive films formed in 0.5 M H{sub 2}SO{sub 4} on Fe-22Cr(110). Aging under polarization at +500 mV/SHE causes a dehydration (anodic) reaction of the outer chromium hydroxide layer of the passive film. This anodic reaction results in a thickening of the inner mixed Cr(III) and Fe(III) oxide layer enriched in Cr{sub 2}O{sub 3}. It also causes a coalescence of the oxide nuclei of the passive film and a crystallization of the inner Cr{sub 2}O{sub 3}. It also causes a coalescence of the oxide nuclei of the passive film and a crystallization of the inner Cr{sub 2}O{sub 3} oxide layer in epitaxy with the substrate. The epitaxial relationship is {alpha}-Cr{sub 2}O{sub 3}(0001) {parallel} Fe-22Cr(110) with three different azimuthal orientations. Aging under polarization ...

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The dependence of the photoluminescent properties of In{sub 0.48}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.52}P alloys (0{le}{ital y}{le}0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy---135 meV---has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between ordered'' domains and the disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization ...

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In order to fabricate high temperature superconducting tapes for power applications, the authors have analyzed different buffer layer architectures grown on textured Ni substrates suitable for YBCO deposition. Due to its optimal lattice matching the studied structures present as top layer a CeO{sub 2} film. The deposition of CeO{sub 2} on Ni substrates was performed by pulsed laser ablation and by e-beam evaporation at different temperatures. The films obtained by the two deposition techniques have not optimal structural properties, having a polycrystalline component. The misorientation of CeO{sub 2} is probably due to the formation of NiO at the interface between the film and the substrate during the deposition process even if no oxygen is introduced. In order to prevent Ni oxidation an intermediate 2000 {angstrom} Pd thick film was deposited by e-beam. Furthermore, the lattice mismatch between Pd and CeO{sub 2} is smaller than that between Ni and CeO{sub 2}. The Pd layer inhibits ...

Science.gov (United States)

Room-temperature continuous-wave (cw) operation is achieved in the MBE (molecular-beam epitaxy)-grown InGaP/InGaAlP double-heterostructure (DH) visible laser diodes with a threshold current of 110 mA. The lasing wavelength and threshold current density under pulsed operation are 666 nm and as low as 3.9 kA/cm/sup 2/, respectively. This result is achieved by the introduction of H/sub 2/ into the growth chamber during growth, the continuous growth from one layer to the next layer, and the introduction of a GaAs buffer layer. InGaP/InGaAlP quantum well structures are also grown. From photoluminescence measurements, the conduction-band discontinuity ..delta..E/sub c/ is estimated to be 0.43 of the band-gap difference ..delta..E/sub g/. Furthermore, the multiquantum-well (MQW) structure is found to be stable under thermal treatment at temperatures as high as 750 /sup 0/C. Room-temperature pulsed operation of InGaP/InGaAlP MQW laser diodes is achieved for the first time. ...

International Nuclear Information System (INIS)

In various situations, measurements in prompt gamma neutron activation analysis (PGNAA) are performed to determine the amount of an elemental impurity relative to that of a major constituent of the matrix. An example of this is the measurement of hydrogen concentration in a metallic matrix. In all such cases, a major contributor to the uncertainty in the measurement is the uncertainty in the ratio of the high-purity germanium (HPGe) detector full-energy peak efficiency for the gamma-ray lines of interest (i.e., impurity and matrix gammas). Usually, the ratio is derived from the relative peak efficiency curve, which is determined using isotopic standards that emit multiple gamma ray lines (e.g., "1"5"2Eu) in the energy range <3000 keV, or using prompt gamma radionuclides (e.g., "1"4N, "3"5Cl) in the energy range >3000 keV. In either case, the uncertainty in the ratio of the peak efficiency values derived from such measurements will be on the order of a few ...

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We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si{sup +} ion implants at very high doses ({approx}10{sup 16}cm{sup {minus}2}). We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation ({approx}700 at 740{degree}C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {l_brace}311{r_brace} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We ...

Energy Technology Data Exchange (ETDEWEB)

We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant concentration which can be incorporated in the ...

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Ion Beam Induced Luminescence (IBIL) and Ion Beam Induced Charge Collection (IBICC) have been applied in the study of the luminescence emission efficiency and investigation of the homogeneity of the luminescence emission in phosphors. The IBIL imaging was performed by using sharply focused ion beams or broad/partially-focused ion beams. The luminescence emission homogeneity in samples was examined to reveal possible distributed crystal-defects that may lead to the inhomogeneity of the luminescence emission in samples.The purpose of the study is to search for suitable luminescent thin films that have high homogeneity of luminescence emission, large IBIL efficiency under heavy ion excitation, and can be placed as a thin layer on the top of microelectronic devices to be analyzed with Ion Photon Emission Microscopy (IPEM). The emission yield was found to be low for organic materials, due to saturation of the light output dependence on the energy deposition of heavy ions. The emission yield ...

International Nuclear Information System (INIS)

The profile imaging technique is used to study the oxidation of ZnTe and InP surfaces induced by in situ reaction due to the electron beam of the microscope and by ex situ heating in air. For both materials, in situ reaction with the electron beam resulted in desorption of the anion species and the formation of the metal oxide. The observation of In metal particles, and the fact that the rate of formation of In_2O_3 was substantially reduced by an improvement of the vacuum near the specimen region, suggested that the presence of oxygen is not involved in the desorption process. The ex situ heating of ZnTe up to 260 degrees C in air resulted in crystals of ZnO and Te metal, generally in a layered surface region with the sequence of ZnTe/Te/ZnO. The large Te crystals usually had an epitaxial relationship with the bulk ZnTe but the small ZnO crystals had random orientations. The ex situ heating of InP to 380 degrees C in air only gave rise to small crystals of In_2O_3 ...

International Nuclear Information System (INIS)

Fluorine is known to have a beneficial role for the B diffusion reduction in preamorphized Si, and is promising for the realization of ultra-shallow junctions. Thus, we studied the F incorporation in Si during the solid phase epitaxy (SPE) process, pointing out the effects of the implanted F energy and fluence and the role played by the possible presence of dopants. The incorporation of fluorine proceeds by F segregation at the amorphous-crystalline interface, with a kinetics driven by the SPE rate. In fact, the quicker the SPE rate, the higher is the F fluence retained. Moreover, we demonstrated that F incorporated in Si layers does not appreciably affect the Is emission from spatially separated end-of-range (EOR) defects. The modification, induced by the presence of F, of the point defect density (Is and Vs) was also studied by means of B and Sb spike layers, used as local markers for Is and Vs, respectively. We showed that F is not only able to completely ...

International Nuclear Information System (INIS)

A novel technique is proposed for the growth of an InN film on a GaN/Al2O3(0001) template by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). The method involves 1) InN growth under an In-rich condition and 2) additional nitrogen radical irradiation after the InN growth under an In-rich condition. Excess In that appeared on the InN surface in the InN growth under an In-rich condition is transformed to InN by the additional nitrogen radical irradiation. The effective V/III ratio is easily controlled by monitoring the intensity in a reflection high-energy electron diffraction (RHEED) pattern. The growth of the InN film by repeating the InN growth under an In-rich condition and the additional nitrogen radical irradiation is also demonstrated. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

International Nuclear Information System (INIS)

The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In particular, the I-substitutional carbon (C) interactions have been studied, using a molecular-beam-epitaxy grown Si_1_-_yC_y layer interposed between the shallow I-source and a deeper B-spike (marker for I-concentration). Substitutional C atoms are shown to trap I's, to be removed from their substitutional sites, and to form stable precipitates into the C-rich region. The I-trapping mechanism was quantitatively studied by a simulation code. The reactions causing trapping and deactivation are described. In addition, the boron markers approach was extended to the two dimensional (2D) diffusion. High resolution scanning capacitance microscopy was used for quantitative measurements of the 2D boron transient enhanced diffusion induced on a boron delta array by the I's ion beam injected through a sub-micron dimension ...

International Nuclear Information System (INIS)

Focused ion beam (FIB) irradiation of a thin Ni_2Si layer deposited on a Si substrate was carried out and studied using an in-situ transmission electron microscope (in-situ TEM). Square areas on sides of 4 by 4 and 9 by 9 microm were patterned at room temperature with a 25 keV Ga"+-FIB attached to the TEM. The structural changes of the films indicate a uniform milling, sputtering of the Ni_2Si layer and the damage introducing to the Si substrate. Annealing at 673 K results in the change of the Ni_2Si layer into an epitaxial NiSi_2 layer outside the FIB irradiated area, but several precipitates appear around the treated area. Precipitates was analyzed by energy dispersive X-ray spectroscopy (EDS). Larger amount of Ni than the surrounding matrix was found in precipitates. Selected area diffraction (SAD) patterns of the precipitates and the corresponding dark field images imply the formation of a Ni rich silicide. The relation between the FIB tail and the ...

International Nuclear Information System (INIS)

Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-T_c superconducting lines as narrow as 0.8 #mu#m have been fabricated from epitaxial YBa_2Cu_3O_7 _- _y films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 #mu#m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 x 10"4 A/cm"2 at 77.3 K. Maskless etching was carried out using 130-keV au"+ focused ion-beam (FIB) with a 0.1-#mu#m-diameter beam. A 50-nm-thick film was patterned into 0.3-#mu#m-wide lines at a dose of 5 x "1"6 ions/cm"2. In comparison with Ar IBE, Cl_2 reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with 300-keV Si"+ "+ FIB also indicated the possibility to produce submicrometer patterns by selectively modifying film properties from superconductive to normal or insulting.

Energy Technology Data Exchange (ETDEWEB)

Heusler alloys are considered as interesting ferromagnetic electrode materials for magnetic tunnel junctions, because of their high spin polarization. We, therefore, investigated the micromagnetic properties in a prototypical thin film system comprising two different Heusler phases Co{sub 2}MnSi (CMS) and Co{sub 2}FeSi (CFS) separated by a MgO barrier. The magnetic microstructure was investigated by X-ray photoemission electron microscopy (XPEEM). We find a strong influence of the Heusler phase formation process on the magnetic domain patterns. SiO{sub 2}/V/CMS/MgO/CFS and SiO{sub 2}/V/CFS/MgO/CMS trilayer structures exhibit a strikingly different magnetic behavior, which is due to pinhole coupling through the MgO barrier and a strong thickness dependence of the magnetic ordering in Co{sub 2}MnSi.

International Nuclear Information System (INIS)

A scalar-relativistic procedure for calculating the valence-electron contribution to the total energy of bulk and thin-film solids has been developed and applied to the fcc and bcc phases of the group-VIB transition elements Cr, Mo, and W. This approach, which is based on the linear augmented-plane-wave method and local-density-functional theory, contains no shape approximations for either the charge density or potential. The formulation adopts a rigid-core approximation and incorporates an exact treatment of the core-charge tails that extend beyond the muffin-tin spheres. The application of this procedure to bcc Cr, Mo, and W yields calculated lattice parameters and bulk moduli that are in good (Cr) to excellent (Mo and W) agreement with experiment. The present calculated properties also agree quite well with the results of previous calculations involving a variety of band-structure methods. The calculated fcc-bcc energy difference for Cr, Mo, and W increases in a nearly linear manner ...

International Nuclear Information System (INIS)

In this paper, we propose to characterize boron transient enhanced diffusion (TED) for processes currently used for P"+/N ultra-shallow junctions (USJ) fabrication. Indeed, the fundamental understanding of boron diffusion for low energy boron implantation is mandatory to evaluate the scalability of such processes for the coming complementary metal-oxide-semiconductor (CMOS) transistor generations. In these experiments, we characterize the boron anomalous diffusion, thanks to boron buried marker-layers obtained by epitaxial growth. B"+ and BF_2"+ ultra-low energy (ULE) implantations and plasma doping (PLAD) using BF_3 as precursor gas are carried out to compare the two techniques used for advanced USJ fabrication. Boron diffusion behaviors are analyzed via secondary ion mass spectrometry for annealing at 700 deg. C for 5 min and 15 min. Finally this paper brings some physical insights explaining the technological benefit coming from PLAD technique over standard ion ...

International Nuclear Information System (INIS)

Distributed Bragg reflectors (DBRs) composed of In_0_._5Al_0_._5P/In_0_._5(Al_yGa_1_-_y)_0_._5P quarter-wave layers have been prepared using metalorganic vapor phase epitaxy. The structures were grown over a wide range of high-index layer composition (0#<=#y#<=#0.6) and peak reflectivity wavelength (720 nm#<=##lambda##<=#565 nm, covering the spectrum from deep red to green). In all cases observed and calculated reflectance spectra were in excellent agreement. Using these DBRs, an undoped all-phosphide visible vertical cavity surface-emitting laser structure was grown. Under pulsed optical excitation at room temperature, lasing was obtained at a wavelength of #lambda##approx#670 nm, with a threshold power density comparable to that observed from similar structures prepared using AlAs/AlGaAs DBRs.

Energy Technology Data Exchange (ETDEWEB)

GaAs material and device structure optimization studies on optical-grade, millimeter-and-less grain-size polycrystalline Ge substrates are presented. We discuss the growth of high-quality epitaxial layers across various crystalline orientations of a polycrystalline substrate; this is important for obtaining high-performance solar cells. The GaAs solar cell on n-type poly-Ge substrate is a p-on-n type, with an undoped spacer between the p-emitter and the n-base. An experimental study of dark currents in these junctions, with and without the spacer, as a function of temperature (77K to 288K) is presented; this study suggests that the spacer reduces the tunneling contribution to dark current. In addition, we describe device-structure optimization studies that have led us to achieve an open-circuit voltage (V{sub oc}) exceeding 1 Volt and an AM1.5 efficiency of {approximately}19{percent} for a 4-cm{sup 2}-area GaAs cell on sub-mm grain-size poly-Ge. We have also ...

Energy Technology Data Exchange (ETDEWEB)

Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.

International Nuclear Information System (INIS)

High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transient-enhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for long-range self-interstitial migration in Si, and we believe these are the first observations of the interstitialcy diffusion mechanism with no vacancy ...

International Nuclear Information System (INIS)

Excitonic transitions in metalorganic vapor phase epitaxially grown In_xGa_1_-_xP/In_0_._4_8(Al_0_._7Ga_0_._3)_0_._5_2P strained single quantum-well structures are characterized using low-temperature photoluminescence and photoluminescence excitation (PLE) spectroscopies. The structures consist of several uncoupled quantum wells with thicknesses between 1.2 and 11.3 nm, and compositions x of 0.48 (nominally lattice matched) and 0.56 (#approx#0.6% biaxial compressive strain). The photoluminescence spectra exhibit intense peaks over the wavelength range 550--650 nm, with linewidths between 7 and 23 meV depending on the well thickness. The PLE spectra reveal strong heavy-hole and light-hole transitions, as well as higher-order (n=2) transitions in the thicker wells. The heavy-hole/light-hole splitting shows little dependence on well thickness in the strained structures, indicating a relatively large conduction band offset of #DELTA#E_C#approx#0.75#DELTA#E_G.

International Nuclear Information System (INIS)

The changes in the electrical and structural properties of metal-silicide films caused byion implantation and subsequent thermal annealing have been investigated. Epitaxial silicide films such as those of CoSi"2, NiSi"2 and Pd"2Si grown on Si(111) substrates were implanted with Ar ions and annealed in a vacuum furnace at temperatures ranging from 200 to 800_0C. Rutherford backscattering and channeling techniques and the four-point probe method were used to measure the crystalline quality and the sheet resistance of the films, respectively. It was found that the sheet resistances of CoSi"2, NiSi"2 and Pd"2Si films were increased by factors of 70, 6, and 3, respectively, by implantation to a dose of 1 x 10_1_6 Ar-ions/cm_2, but that they were almost restored by subsequent annealing to the values before implantation. A phase transformation from Pd"2Si to PdSi was also observed in the high-temperature annealing of the implanted Pd"2Si films. (author).

International Nuclear Information System (INIS)

In this experiment, a Si wafer containing four lightly doped B marker layers epitaxially grown by CVD has been implanted with 100 keV Si"+ ions to a dose of 2 x 10"1"4 ions/cm"2 and annealed at 850 deg. C for several times in an RTA system in flowing N_2. TEM and SIMS analysis, in conjunction with a transient enhanced diffusion (TED) evaluation method based on the kick-out diffusion mechanism, have allowed us to accurately study the boron TED evolution in presence of extended defects. We show that the silicon surface plays a key role in the recombination of Si interstitial atoms by providing the first experimental evidence of the resulting Si_i_n_ts supersaturation gradient between the defect region and the surface. Our results indicate an upper limit of about 200 nm for the surface recombination length of Si interstitials at 850 deg. C in a N_2 ambient.

Energy Technology Data Exchange (ETDEWEB)

A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

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Modelization of crack propagation and theoretical prediction of rupture are the two main objectives of researchers in stress corrosion cracking. Nevertheless, to reach this aim, the behavior of the passive film which appears spontaneously on the substrate in contact with an environment has to be known. This structural and mechanical characterization is all the more difficult because the number of parameters is important: crystallinity rate, defects concentration, thickness (about a few nanometers), electric field, chemical composition (a lot of oxides are present), peeling layers (atomic structure for example) and some hypothesis can be made about their multi-layer structure, their chemical composition or their epitaxial character... Passive films formed on 316L or 304L stainless steels in different aqueous solutions (in ambient air, in MgCl{sub 2} at 117 deg. C...) have been studied and some important remarks about their mechanical properties are made (brittle ...

Science.gov (United States)

The study of the intrinsic behavior of high transition temperature copper-oxide superconductors (HTSC) has proven to be challenging because of the extreme sensitivity of their transport properties on material quality. These compounds are characterized by a high degree of structural and electrical anisotropy, and a very short superconductive coherence length of the same order as the size of the crystalline unit cell (~5-30 A). As a result, microscopic defects such as oxygen vacancies, cationic disorder, and the presence of minute impurities have a significant effect on electrical transport in these materials. Therefore, much effort has been expended in synthesizing sizable samples that are homogeneous, well characterized, and emenable to the study of the anisotropic properties of the HTSC. We have demonstrated that thin films of HTSC compounds such as rm YBa_2Cu_3O_{7 -delta}, which is a 92 K superconductor, can be synthesized easily by a technique known as pulsed laser deposition, and ...

International Nuclear Information System (INIS)

Interest to thin film of metals' silicides first of all is conditioned intrinsic al them unique physical properties. On their basis of it is possible to produce extremely sophisticated devices of solid-state electronics, production which needs the controlled change of physics, chemical and electrical properties with high-level of accuracy. On the present time most are in detail investigated composition, structure and properties of three-dimensional samples of metals' silicides. In the last years the intensive are led to researches in the direction of creation and study of physical-chemical properties thin (500-1000 Angstroms) and ultrafine (100-120 Angstroms) films silicides. It has information about composition, morphology of surface and emission of properties of thin film of silicides of barium, of cobalt and of palladium, was obtained in conditions of ultra-high vacuum. Low energy ion implantation and further annealing on composition, electronic and crystalline structure of Si ...

International Nuclear Information System (INIS)

The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the Stranski-Krastanov for substrate ...

Energy Technology Data Exchange (ETDEWEB)

We have investigated the generation and propagation of misfit dislocations in strained In/sub y/Ga/sub 1-//sub y/As/GaAs multiquantum wells grown by molecular-beam epitaxy, with cross-sectional transmission electron microscopy. The samples are of excellent optical quality, with multiquantum wells having well widths of 100 A, being characterized by excitonic linewidths and Stokes shifts of 1.5--2.5 and 1--2 meV, respectively. We have examined the growth of 2-..mu..m-thick multiquantum-well samples grown either directly on GaAs, or with an intermediate composition buffer layer, and for the cases of small (y = 0.07) and large (y = 0.16) misfits. It is seen that for the case of quantum wells with small misfit, grown directly on GaAs, metastable growth can be achieved. This is confirmed by low-temperature absorption measurements and from transmission electron microscopy experiments performed both before and after post-growth thermal annealing. In the case of quantum ...

International Nuclear Information System (INIS)

In this work the diffusion of ion-beam-injected self-interstitials (Is) and their interaction with impurities in crystalline Si are presented. In particular, the I penetration into a molecular beam epitaxy grown Si structure was studied by means of diffusion effects induced on B spikes, analyzed by a developed simulation code. Trapping effects at sample-surface and bulk are evidenced and modeled. The B marker approach was extended to the two-dimensional (2D) I-diffusion occurring as a consequence of ion implantation through a sub-micron dimension patterned oxide mask. I-source size effects on the I penetration have been found and modeled, quantitatively describing the 2D I-diffusion. The I-substitutional carbon interactions have been also studied, showing the C ability to effectively retain Is. The I-trapping mechanism was quantitatively studied by the simulation code, showing that one I is able to deactivate about two C traps by means of I-trapping and ...

International Nuclear Information System (INIS)

This topical review provides an overview of quantum dot micropillars and their application in cavity quantum electrodynamics (cQED) experiments. The development of quantum dot micropillars is motivated by the study of fundamental cQED effects in solid state and their exploitation in novel light sources. In general, light-matter interaction occurs when the dipole of an emitter couples to the ambient light field. The corresponding coupling strength is strongly enhanced in the framework of cQED when the emitter is located inside a low mode volume microcavity providing three-dimensional photon confinement on a length scale of the photon wavelength. In addition, coherent coupling between light and matter, which is essential for applications in quantum information processing, can be achieved when dissipative losses, predominantly due to photon leakage out of the cavity, are strongly reduced. In this paper, we will demonstrate that high-quality, low mode volume quantum dot micropillars ...

International Nuclear Information System (INIS)

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy (MBE). Damage from nonamorphizing Si implants at doses ranging from 5x10"1"2 to 1x10"1"4/cm"2 evolves into a distribution of #left brace#311#right brace# interstitial agglomerates during the initial annealing stages at 670 endash 815 degree C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of #left brace#311#right brace# defects during Ostwald ...

Energy Technology Data Exchange (ETDEWEB)

Microfabrication processes for Y-Ba-Cu-O films have been investigated, using ion-beam techniques. High-{Tc} superconducting lines as narrow as 0.8 {mu}m have been fabricated from epitaxial YBa{sub 2}Cu{sub 3}O{sub 7 {minus} {ital y}} films by Ar ion-beam etching (IBE), combined with focused ion-beam (FIB) lithography. The resulting lines, 1.3 {mu}m wide and 2 mm long, showed a zero resistance temperature of 81 K and a critical current density of 1.9 {times} 10{sup 4} A/cm{sup 2} at 77.3 K. Maskless etching was carried out using 130-keV au{sup +} focused ion-beam (FIB) with a 0.1-{mu}m-diameter beam. A 50-nm-thick film was patterned into 0.3-{mu}m-wide lines at a dose of 5 {times} {sup 16} ions/cm{sup 2}. In comparison with Ar IBE, Cl{sub 2} reactive ion-beam etching (RIBE) exhibited an enhancement effect in sputtering yield. Ion implantation with 300-keV Si{sup + +} FIB also indicated the possibility to produce submicrometer patterns by selectively modifying film ...

Science.gov (United States)

An x-ray diffraction approach has been developed for determination of the kinetics of growth of Pd/sub 2/Si layers. Epitaxial Pd/sub 2/Si films were grown on Si(111) substrates over a temperature range of 160-222/sup 0/C by a solid-state reaction between the substrates and the Pd overlayers. The parabolic rate equation was verified and rate constants showed Arrhenius behavior with an activation energy E/sub a/ = 1.06 eV and prefactor k/sub 0/ = 7 x 10/sup -4/ cm/sup 2//s. The low value of E/sub a/ suggests a short-circuit diffusion mechanism. It is reasonable to expect that impurities and microstructure may play important roles in the growth process. Impurity levels in the specimens were evaluated by analytic techniques suited to thin-film study: Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Auger electron spectrometry. No impurities were present at concentrations approaching 1 at. %. Some O, C, and F were detected at the Pd/sub ...

Energy Technology Data Exchange (ETDEWEB)

The structure of hydroxylated oxide films (passive films) formed on Cr(110) in 0.5 M H{sub 2}SO{sub 4} at +0.35, +0.55, and +0.75 V/SHE has been investigated by in situ scanning tunneling microscopy (STM). Cathodic reduction pretreatments at {minus}0.54, {minus}0.64, and {minus}0.74 V/SHE destroy the well-defined topography of the single-crystal electrode and they have been excluded from the passivation procedure. Two different passive film structures have been observed, depending on the potential and time of passivation. At low potential (+0.35 V/SHE), the passive film, consisting mostly of chromium hydroxide, has a noncrystalline and granular structure whose roughness suggests local variations of thickness of ca. {+-} 0.5 nm. A similar structure is observed at higher potential (+0.55 V/SHE), but only for a short polarization time. For longer polarization at 0.55 V/SHE, and at higher potentials (+0.75 V/SHE), a crystalline structure is formed; the higher the potential, the faster the ...

International Nuclear Information System (INIS)

We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation doped with carbon utilizing a resistive filament source. At T=0.3 K and carrier density p=1x10"1"1 cm"-"2, a mobility of 10"6 cm"2/Vs is achieved. At fixed carrier density p=10"1"1 cm"-"2, the mobility is found to be a nonmonotonic function of the quantum well width. The mobility peaks at 10"6 cm"2/Vs for a 15-nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along [011] is approximately 20% higher than along the [011] direction. In addition, the low-temperature carrier density is found to have low sensitivity to light. The hole density increases by only #approx#10% after exposure to red light at T=4.2 K. In structures designed for a lower carrier ...

Science.gov (United States)

We present results from the first studies of electric-field effects on optical transitions in visible-band-gap InGaP/InAlGaP multiple-quantum-well (MQW) structures. These structures, grown at 775 [degree]C by metalorganic vapor phase epitaxy on (100) GaAs substrates misoriented 6[degree] towards P(111)[r angle][l angle]111[r angle]A, consist of nominally undoped MQWs surrounded by doped In[sub 0.49]Al[sub 0.51]P cladding layers to form [ital p]-[ital i]-[ital n] diodes. The Stark shifts of various allowed and forbidden quantum-well transitions were observed in bias-dependent electroreflectance spectra of In[sub 0.49]Ga[sub 0.51]P/In[sub 0.49](Al[sub 0.5]Ga[sub 0.5])[sub 0.51]P MQW samples with 10-nm-thick layers. We find the magnitude of these shifts to depend on the details of the Mg doping profile, confirming the importance of Mg diffusion and unintentional background doping in these materials. Our results show that (InAlGa)P materials are promising for ...

Science.gov (United States)

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for visible-wavelength optical modulator ...

Science.gov (United States)

The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and {sup 28}Si enriched layers, enables the observation of {sup 30}Si self-diffusion from the natural layers into the {sup 28}Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion ...

Energy Technology Data Exchange (ETDEWEB)

1. In order to carry out isothermic crystal growth experiments of YBCO the 123 primary crystallization field was determined by means of phase diagram investigations and crystal growth experiments at different oxygen partial pressure. 2. YBCO single crystals of high crystallographic perfection were grown and conclusions on the flux pinning mechanism were drawn. 3. By means of Liquid Phase Epitaxy (LPE) single crystalline (Tc{approx}90 K; {Delta}T{<=}0.5 K) c- and a,b- YBCO fils have been prepared on NdGaO{sub 3} and LaGaO{sub 3} substrates. The films were characterized structurally and magnetically. 4. Our fist melt textured YBCO ``single crystals`` possess intracrystalline critical current densities >10{sup 4} A/cm{sup 2} at B{<=}2T. The irreversibility inductions are {<=}6 T at 77 K. A simple demonstrator was constructed together with the IFW Dresden and a growth model was developed. 5. Using above all torque magnetometer measurements we separated ...