Experimental investigation into the coupling effects of magnetic field, temperature and pressure on electrical resistivity of non-oriented silicon steel sheet

Science.gov (United States)

Xiao, Lijun; Yu, Guodong; Zou, Jibin; Xu, Yongxiang

2018-05-01

In order to analyze the performance of magnetic device which operate at high temperature and high pressure, such as submersible motor, oil well transformer, the electrical resistivity of non-oriented silicon steel sheets is necessary for precise analysis. But the reports of the examination of the measuring method suitable for high temperature up to 180 °C and high pressure up to 140 MPa are few. In this paper, a measurement system based on four-probe method and Archimedes spiral shape measurement specimens is proposed. The measurement system is suitable for measuring the electrical resistivity of unconventional specimens under high temperature and high pressure and can simultaneously consider the influence of the magnetic field on the electrical resistivity. It can be seen that the electrical resistivity of the non-oriented silicon steel sheets will fluctuate instantaneously when the magnetic field perpendicular to the conductive path of the specimens is loaded or removed. The amplitude and direction of the fluctuation are not constant. Without considering the effects of fluctuations, the electrical resistivity of the non-oriented silicon steel sheets is the same when the magnetic field is loaded or removed. And the influence of temperature on the electrical resistivity of the non-oriented silicon steel sheet is still the greatest even though the temperature and the pressure are coupled together. The measurement results also show that the electrical resistivity varies linearly with temperature, so the temperature coefficient of resistivity is given in the paper.

A bioactive metallurgical grade porous silicon-polytetrafluoroethylene sheet for guided bone regeneration applications.

Science.gov (United States)

Chadwick, E G; Clarkin, O M; Raghavendra, R; Tanner, D A

2014-01-01

The properties of porous silicon make it a promising material for a host of applications including drug delivery, molecular and cell-based biosensing, and tissue engineering. Porous silicon has previously shown its potential for the controlled release of pharmacological agents and in assisting bone healing. Hydroxyapatite, the principle constituent of bone, allows osteointegration in vivo, due to its chemical and physical similarities to bone. Synthetic hydroxyapatite is currently applied as a surface coating to medical devices and prosthetics, encouraging bone in-growth at their surface and improving osseointegration. This paper examines the potential for the use of an economically produced porous silicon particulate-polytetrafluoroethylene sheet for use as a guided bone regeneration device in periodontal and orthopaedic applications. The particulate sheet is comprised of a series of microparticles in a polytetrafluoroethylene matrix and is shown to produce a stable hydroxyapatite on its surface under simulated physiological conditions. The microstructure of the material is examined both before and after simulated body fluid experiments for a period of 1, 7, 14 and 30 days using Scanning Electron Microscopy. The composition is examined using a combination of Energy Dispersive X-ray Spectroscopy, Thin film X-ray diffraction, Attenuated Total Reflectance-Fourier Transform Infrared Spectroscopy and the uptake/release of constituents at the fluid-solid interface is explored using Inductively Coupled Plasma-Optical Emission Spectroscopy. Microstructural and compositional analysis reveals progressive growth of crystalline, 'bone-like' apatite on the surface of the material, indicating the likelihood of close bony apposition in vivo.

LSA Large Area Silicon Sheet Task Continuous Liquid Feed Czochralski Growth

Science.gov (United States)

Fiegl, G.

1979-01-01

A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.

Low cost silicon-on-ceramic photovoltaic solar cells

Science.gov (United States)

Koepke, B. G.; Heaps, J. D.; Grung, B. L.; Zook, J. D.; Sibold, J. D.; Leipold, M. H.

1980-01-01

A technique has been developed for coating low-cost mullite-based refractory substrates with thin layers of solar cell quality silicon. The technique involves first carbonizing one surface of the ceramic and then contacting it with molten silicon. The silicon wets the carbonized surface and, under the proper thermal conditions, solidifies as a large-grained sheet. Solar cells produced from this composite silicon-on-ceramic material have exhibited total area conversion efficiencies of ten percent.

Low cost silicon solar array project large area silicon sheet task: Silicon web process development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

1977-01-01

Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

LSA Large Area Silicon Sheet Task. Continuous Liquid Feed Czochralski Growth. [for solar cell fabrication

Science.gov (United States)

Fiegl, G.

1979-01-01

The design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method suitable for producing single silicon crystals for use in solar cells is presented. The growth of at least 150 kg of mono silicon crystal, 150 mm in diameter is continuous from one growth container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls is discussed. Due to the silicon monoxide build up in the furnace and its retarding effect on crystal growth the furnace conversion for operation in the low pressure range is described. Development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon is described.

Process research on non-CZ silicon material

Science.gov (United States)

1982-01-01

High risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.

Floating Silicon Method

Energy Technology Data Exchange (ETDEWEB)

Kellerman, Peter

2013-12-21

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

Development of advanced methods for continuous Czochralski growth. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

Science.gov (United States)

Wolfson, R. G.; Sibley, C. B.

1978-01-01

The three components required to modify the furnace for batch and continuous recharging with granular silicon were designed. The feasibility of extended growth cycles up to 40 hours long was demonstrated by a recharge simulation experiment; a 6 inch diameter crystal was pulled from a 20 kg charge, remelted, and pulled again for a total of four growth cycles, 59-1/8 inch of body length, and approximately 65 kg of calculated mass.

Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

Science.gov (United States)

Bhatt, R. T.; Palczer, A. R.

1998-01-01

Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

Porous silicon structures with high surface area/specific pore size

Science.gov (United States)

Northrup, M.A.; Yu, C.M.; Raley, N.F.

1999-03-16

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gases in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters. 9 figs.

Temperature effects on the magnetic properties of silicon-steel sheets using standardized toroidal frame.

Science.gov (United States)

Wu, Cheng-Ju; Lin, Shih-Yu; Chou, Shang-Chin; Tsai, Chia-Yun; Yen, Jia-Yush

2014-01-01

This study designed a detachable and standardized toroidal test frame to measure the electromagnetic characteristic of toroidal laminated silicon steel specimens. The purpose of the design was to provide the measurements with standardized and controlled environment. The device also can withstand high temperatures (25-300°C) for short time period to allow high temperature tests. The accompanying driving circuit facilitates testing for high frequency (50-5,000 Hz) and high magnetic flux (0.2-1.8 T) conditions and produces both sinusoidal and nonsinusoidal test waveforms. The thickness of the stacked laminated silicon-steel sheets must be 30~31 mm, with an internal diameter of 72 mm and an outer diameter of 90 mm. With the standardized setup, it is possible to carry out tests for toroidal specimen in high temperature and high flux operation. The test results show that there is a tendency of increased iron loss under high temperature operation. The test results with various driving waveforms also provide references to the required consideration in engineering designs.

Vacuum die casting of silicon sheet for photovoltaic applications. First quarterly report, March 16-June 30, 1979

Energy Technology Data Exchange (ETDEWEB)

None

1979-01-01

The obtective of this program is to develop a vacuum die-casting process for producing silicon sheet suitable for photovoltaic cells and to develop production techniques for optimization of polycrystallie silicon solar cell output. Efforts will examine process methods which are directed toward minimum cost processing of silicon into a quality suitable for producing solar cells with a terrestrial efficiency greater than 12% and having the potential to be scaled for large quantity production. In the vacuum die casting technique, silicon is melted under vacuum, and an evacuated die with a thin rectangular cavity is inserted into the melt. Liquid silicon is then injected into the die using a positive pressure of an inert gas. The major portion of the die casting work will be performed at Stanford Research Institute International under subcontract. The initial approach will follow parallel tracks: (1) obtain mechanical design parameters by using boron nitride, which has been shown to be non-wetting to silicon; (2) optimize silicon nitride material composition and coatings by sessile drop experiments; (3) test effectiveness of fluoride salt interfacial media with a graphite mold; and (4) test effect of surface finish using both boron nitride and graphite. Having established the material and mechanical boundary conditions, a finalized version of the prototype assembly will be constructed and the casting varibles determined. Polycrystalline silicon solar cells, with and without impurities, will be fabricated, characterized, and optimized at ARCCO Solar. The major activities will focus on the use of Wacker SILCO, HEM and in-house materials until vacuum die cast wafers are available. A baseline process with vacuum metallized contacts will be established and a reference mass production process with screen-printed metallization and high-throughput diffusions will also be obtained.

Laser-zone Growth in a Ribbon-to-ribbon (RTR) Process Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

Science.gov (United States)

Baghdadi, A.; Gurtler, R. W.; Legge, R.; Sopori, B.; Rice, M. J.; Ellis, R. J.

1979-01-01

A technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.

Role of Firing Temperature, Sheet Resistance, and Contact Area in Contact Formation on Screen-Printed Metal Contact of Silicon Solar Cell

Science.gov (United States)

Ahmad, Samir Mahmmod; Leong, Cheow Siu; Sopian, K.; Zaidi, Saleem H.

2018-03-01

Formation of an Ohmic contact requires a suitable firing temperature, appropriate doping profile, and contact dimensions within resolution limits of the screen-printing process. In this study, the role of the peak firing temperature in standard rapid thermal annealing (RTA) six-zone conveyor belt furnace (CBF) and two inexpensive alternate RTA systems [a custom-designed, three-zone, 5″-diameter quartz tube furnace (QTF) and a tabletop, 3″-diameter rapid thermal processing (RTP)] has been investigated. In addition, the role of sheet resistance and contact area in achieving low-resistance ohmic contacts has been examined. Electrical measurements of ohmic contacts between silver paste/ n +-emitter layer with varying sheet resistances and aluminum paste/ p-doped wafer were carried out in transmission line method configuration. Experimental measurements of the contact resistivity ( ρ c) exhibited the lowest values for CBF at 0.14 mΩ cm2 for Ag and 100 mΩ cm2 for Al at a peak firing temperature of 870°C. For the QTF configuration, lowest measured contact resistivities were 3.1 mΩ cm2 for Ag and 74.1 mΩ cm2 for Al at a peak firing temperature of 925°C. Finally, for the RTP configuration, lowest measured contact resistivities were 1.2 mΩ cm2 for Ag and 68.5 mΩ cm2 for Al at a peak firing temperature of 780°C. The measured contact resistivity exhibits strong linear dependence on sheet resistance. The contact resistivity for Ag decreases with contact area, while for Al the opposite behavior is observed.

Tribology study of reduced graphene oxide sheets on silicon substrate synthesized via covalent assembly.

Science.gov (United States)

Ou, Junfei; Wang, Jinqing; Liu, Sheng; Mu, Bo; Ren, Junfang; Wang, Honggang; Yang, Shengrong

2010-10-19

Reduced graphene oxide (RGO) sheets were covalently assembled onto silicon wafers via a multistep route based on the chemical adsorption and thermal reduction of graphene oxide (GO). The formation and microstructure of RGO were analyzed by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Raman spectroscopy, and water contact angle (WCA) measurements. Characterization by atomic force microscopy (AFM) was performed to evaluate the morphology and microtribological behaviors of the samples. Macrotribological performance was tested on a ball-on-plate tribometer. Results show that the assembled RGO possesses good friction reduction and antiwear ability, properties ascribed to its intrinsic structure, that is, the covalent bonding to the substrate and self-lubricating property of RGO.

Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

Science.gov (United States)

Fiegl, G. F.; Bonora, A. C.

1980-01-01

The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

The use of large area silicon sensors for thermal neutron detection

International Nuclear Information System (INIS)

Schulte, R.L.; Swanson, F.; Kesselman, M.

1994-01-01

The use of large area planar silicon detectors coupled with gadolinium foils has been investigated to develop a thermal neutron detector having a large area-efficiency (Aε) product. Noise levels due to high detector capacitance limit the size of silicon detectors that can be utilized. Calculations using the Monte Carlo code, MCNP, have been made to determine the variation of intrinsic detection efficiency as a function of the discriminator threshold level required to eliminate the detector noise. Measurements of the noise levels for planar silicon detectors of various resistivities (400, 3000 and 5000 Ω cm) have been made and the optimal detector area-efficiency products have been determined. The response of a Si-Gd-Si sandwich detector with areas between 1 cm 2 and 10.5 cm 2 is presented and the effects of the detector capacitance and reverse current are discussed. ((orig.))

Stable configurations of graphene on silicon

Energy Technology Data Exchange (ETDEWEB)

Javvaji, Brahmanandam; Shenoy, Bhamy Maithry [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Mahapatra, D. Roy, E-mail: droymahapatra@aero.iisc.ernet.in [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Ravikumar, Abhilash [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India); Hegde, G.M. [Center for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012 (India); Rizwan, M.R. [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India)

2017-08-31

Highlights: • Simulations of epitaxial growth process for silicon–graphene system is performed. • Identified the most favourable orientation of graphene sheet on silicon substrate. • Atomic local strain due to the silicon–carbon bond formation is analyzed. - Abstract: Integration of graphene on silicon-based nanostructures is crucial in advancing graphene based nanoelectronic device technologies. The present paper provides a new insight on the combined effect of graphene structure and silicon (001) substrate on their two-dimensional anisotropic interface. Molecular dynamics simulations involving the sub-nanoscale interface reveal a most favourable set of temperature independent orientations of the monolayer graphene sheet with an angle of ∽15° between its armchair direction and [010] axis of the silicon substrate. While computing the favorable stable orientations, both the translation and the rotational vibrations of graphene are included. The possible interactions between the graphene atoms and the silicon atoms are identified from their coordination. Graphene sheet shows maximum bonding density with bond length 0.195 nm and minimum bond energy when interfaced with silicon substrate at 15° orientation. Local deformation analysis reveals probability distribution with maximum strain levels of 0.134, 0.047 and 0.029 for 900 K, 300 K and 100 K, respectively in silicon surface for 15° oriented graphene whereas the maximum probable strain in graphene is about 0.041 irrespective of temperature. Silicon–silicon dimer formation is changed due to silicon–carbon bonding. These results may help further in band structure engineering of silicon–graphene lattice.

The use of large area silicon sensors for thermal neutron detection

Energy Technology Data Exchange (ETDEWEB)

Schulte, R.L. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States)); Swanson, F. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States)); Kesselman, M. (Research and Development Center, Mail Stop: A01-26, Grumman Aerospace Corporation, Bethpage, NY 11714 (United States))

1994-12-30

The use of large area planar silicon detectors coupled with gadolinium foils has been investigated to develop a thermal neutron detector having a large area-efficiency (A[epsilon]) product. Noise levels due to high detector capacitance limit the size of silicon detectors that can be utilized. Calculations using the Monte Carlo code, MCNP, have been made to determine the variation of intrinsic detection efficiency as a function of the discriminator threshold level required to eliminate the detector noise. Measurements of the noise levels for planar silicon detectors of various resistivities (400, 3000 and 5000 [Omega] cm) have been made and the optimal detector area-efficiency products have been determined. The response of a Si-Gd-Si sandwich detector with areas between 1 cm[sup 2] and 10.5 cm[sup 2] is presented and the effects of the detector capacitance and reverse current are discussed. ((orig.))

Small area silicon diffused junction x-ray detectors

International Nuclear Information System (INIS)

Walton, J.T.; Pehl, R.H.; Larsh, A.E.

1981-10-01

The low temperature performance of silicon diffused junction detectors in the measurement of low energy x-rays is reported. The detectors have an area of 0.04 cm 2 and a thickness of 100 μm. The spectral resolutions of these detectors were found to be in close agreement with expected values indicating that the defects introduced by the high temperature processing required in the device fabrication were not deleteriously affecting the detection of low energy x-rays. Device performance over a temperature range of 77 to 150 0 K is given. These detectors were designed to detect low energy x-rays in the presence of minimum ionizing electrons. The successful application of silicon diffused junction technology to x-ray detector fabrication may facilitate the development of other novel silicon x-ray detector designs

Small area silicon diffused junction X-ray detectors

Science.gov (United States)

Walton, J. T.; Pehl, R. H.; Larsh, A. E.

1982-01-01

The low-temperature performance of silicon diffused junction detectors in the measurement of low energy X-rays is reported. The detectors have an area of 0.04 sq cm and a thickness of 100 microns. The spectral resolutions of these detectors were found to be in close agreement with expected values, indicating that the defects introduced by the high-temperature processing required in the device fabrication were not deleteriously affecting the detection of low-energy X-rays. Device performance over a temperature range of 77 K to 150 K is given. These detectors were designed to detect low-energy X-rays in the presence of minimum ionizing electrons. The successful application of silicon-diffused junction technology to X-ray detector fabrication may facilitate the development of other novel silicon X-ray detector designs.

Microstructure and texture evolution of ultra-thin grain-oriented silicon steel sheet fabricated using strip casting and three-stage cold rolling method

Energy Technology Data Exchange (ETDEWEB)

Song, Hong-Yu; Liu, Hai-Tao, E-mail: liuht@ral.neu.edu.cn; Wang, Yin-Ping; Wang, Guo-Dong

2017-03-15

A 0.1 mm-thick grain-oriented silicon steel sheet was successfully produced using strip casting and three-stage cold rolling method. The microstructure, texture and inhibitor evolution during the processing was briefly analyzed. It was found that Goss texture was absent in the hot rolled sheet because of the lack of shear deformation. After normalizing, a large number of dispersed MnS precipitates with the size range of 15–90 nm were produced. During first cold rolling, dense shear bands were generated in the deformed ferrite grains, resulting in the intense Goss texture after first intermediate annealing. The microstructure was further refined and homogenized during the subsequent cold rolling and annealing processes. After primary recrystallization annealing, a homogeneous microstructure consisting of fine and equiaxed grains was produced while the associated texture was characterized by a strong γ-fiber texture. Finally, a complete secondary recrystallization microstructure consisting of entirely large Goss grains was produced. The magnetic induction B{sub 8} and iron loss P{sub 10/400} was 1.79 T and 6.9 W/kg, respectively. - Highlights: • Ultra-thin grain-oriented silicon steel was produced by strip casting process. • Microstructure, texture and inhibitor evolution was briefly investigated. • Goss texture was absent in primary recrystallization annealed sheet. • MnS precipitates with a size range of 15–90 nm formed after normalizing. • A complete secondary recrystallization microstructure was produced.

Characterising large area silicon drift detectors with MOS injectors

International Nuclear Information System (INIS)

Bonvicini, V.; Rashevsky, A.; Vacchi, A.

1999-01-01

In the framework of the INFN DSI project, the first prototypes of a large-area Silicon Drift Detector (SDD) have been designed and produced on 5'' diameter wafers of Neutron Transmutation Doped (NTD) silicon with a resistivity of 3000 Ω·cm. The detector is a 'butterfly' bi-directional structure with a drift length of 32 mm and the drifting charge is collected by two arrays of anodes having a pitch of 200 μm. The high-voltage divider is integrated on-board and is realised with p + implantations. For test and calibration purposes, the detector has a new type of MOS injector. The paper presents results obtained to injecting charge at the maximum drift distance (32mm) from the anodes by means of the MOS injecting structure, As front-end electronics, the authors have used a 32-channels low-noise bipolar VLSI circuit (OLA, Omni-purpose Low-noise Amplifer) specifically designed for silicon drift detectors. The uniformity of the drift time in different regions of the sensitive area and its dependence on the ambient temperature are studied

Efficient 3D conducting networks built by graphene sheets and carbon nanoparticles for high-performance silicon anode.

Science.gov (United States)

Zhou, Xiaosi; Yin, Ya-Xia; Cao, An-Min; Wan, Li-Jun; Guo, Yu-Guo

2012-05-01

The utilization of silicon particles as anode materials for lithium-ion batteries is hindered by their low intrinsic electric conductivity and large volume changes during cycling. Here we report a novel Si nanoparticle-carbon nanoparticle/graphene composite, in which the addition of carbon nanoparticles can effectively alleviate the aggregation of Si nanoparticles by separating them from each other, and help graphene sheets build efficient 3D conducting networks for Si nanoparticles. Such Si-C/G composite shows much improved electrochemical properties in terms of specific capacity and cycling performance (ca. 1521 mA h g(-1) at 0.2 C after 200 cycles), as well as a favorable high-rate capability.

Thin film silicon photovoltaics: Architectural perspectives and technological issues

Energy Technology Data Exchange (ETDEWEB)

Mercaldo, Lucia Vittoria; Addonizio, Maria Luisa; Noce, Marco Della; Veneri, Paola Delli; Scognamiglio, Alessandra; Privato, Carlo [ENEA, Portici Research Center, Piazzale E. Fermi, 80055 Portici (Napoli) (Italy)

2009-10-15

Thin film photovoltaics is a particularly attractive technology for building integration. In this paper, we present our analysis on architectural issues and technological developments of thin film silicon photovoltaics. In particular, we focus on our activities related to transparent and conductive oxide (TCO) and thin film amorphous and microcrystalline silicon solar cells. The research on TCO films is mainly dedicated to large-area deposition of zinc oxide (ZnO) by low pressure-metallorganic chemical vapor deposition. ZnO material, with a low sheet resistance (<8 {omega}/sq) and with an excellent transmittance (>82%) in the whole wavelength range of photovoltaic interest, has been obtained. ''Micromorph'' tandem devices, consisting of an amorphous silicon top cell and a microcrystalline silicon bottom cell, are fabricated by using the very high frequency plasma enhanced chemical vapor deposition technique. An initial efficiency of 11.1% (>10% stabilized) has been obtained. (author)

Multi-layered fabrication of large area PDMS flexible optical light guide sheets

Science.gov (United States)

Green, Robert; Knopf, George K.; Bordatchev, Evgueni V.

2017-02-01

Large area polydimethylsiloxane (PDMS) flexible optical light guide sheets can be used to create a variety of passive light harvesting and illumination systems for wearable technology, advanced indoor lighting, non-planar solar light collectors, customized signature lighting, and enhanced safety illumination for motorized vehicles. These thin optically transparent micro-patterned polymer sheets can be draped over a flat or arbitrarily curved surface. The light guiding behavior of the optical light guides depends on the geometry and spatial distribution of micro-optical structures, thickness and shape of the flexible sheet, refractive indices of the constituent layers, and the wavelength of the incident light. A scalable fabrication method that combines soft-lithography, closed thin cavity molding, partial curing, and centrifugal casting is described in this paper for building thin large area multi-layered PDMS optical light guide sheets. The proposed fabrication methodology enables the of internal micro-optical structures (MOSs) in the monolithic PDMS light guide by building the optical system layer-by-layer. Each PDMS layer in the optical light guide can have the similar, or a slightly different, indices of refraction that permit total internal reflection within the optical sheet. The individual molded layers may also be defect free or micro-patterned with microlens or reflecting micro-features. In addition, the bond between adjacent layers is ensured because each layer is only partially cured before the next functional layer is added. To illustrate the scalable build-by-layers fabrication method a three-layer mechanically flexible illuminator with an embedded LED strip is constructed and demonstrated.

Development of large area, high efficiency amorphous silicon solar cell

Energy Technology Data Exchange (ETDEWEB)

Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

1996-02-01

The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

Record high efficiency of screen-printed silicon aluminum back surface field solar cell: 20.29%

Science.gov (United States)

Kim, Ki Hyung; Park, Chang Sub; Doo Lee, Jae; Youb Lim, Jong; Yeon, Je Min; Kim, Il Hwan; Lee, Eun Joo; Cho, Young Hyun

2017-08-01

We have achieved a record high cell efficiency of 20.29% for an industrial 6-in. p-type monocrystalline silicon solar cell with a full-area aluminum back surface field (Al-BSF) by simply modifying the cell structure and optimizing the process with the existing cell production line. The cell efficiency was independently confirmed by the Solar Energy Research Institute of Singapore (SERIS). To increase the cell efficiency, for example, in four busbars, double printing, a lightly doped emitter with a sheet resistance of 90 to 100 Ω/□, and front surface passivation by using silicon oxynitride (SiON) on top of a silicon nitride (SiN x ) antireflection layer were adopted. To optimize front side processing, PC1D simulation was carried out prior to cell fabrication. The resulting efficiency gain is 0.64% compared with that in the reference cells with three busbars, a single antireflection coating layer, and a low-sheet-resistance emitter.

Towards neuromorphic electronics: Memristors on foldable silicon fabric

KAUST Repository

Ghoneim, Mohamed T.

2014-11-01

The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex\\'s folded pattern for ultra-compact design.

Utility of Vaccum Pressed Silicon Sheet as a Bite Raising Appliance in the Management of TMJ Dysfunction Syndrome.

Science.gov (United States)

Datarkar, Abhay; Daware, Surendra; Dande, Ravi

2017-09-01

Temporomandibular disorders (TMDs) represent a group of painful conditions involving the muscles of mastication and the temporomandibular joint (TMJ) that frequently encountered in general clinical practice. This study is designed to assess the utility of vacuum pressed silicon sheet as a bite raising appliance in the management of TMJ dysfunction syndrome. The patients for this study were selected from those with the chief complaint of TMJ disorder. Out of 200 patients, 104 patients were diagnosed with subluxation and 96 patients were diagnosed with internal derangement of temporomandibular joint. All the reported cases were managed conservatively with physiotherapy and muscle relaxant therapy for one week period and followed with silicon bite raising appliance over both the arches in the subsequent period. All the patients had pain relief within six months duration as graded over verbal analog scale. ANOVA scale was used for comparision of VAS scores. The use of vacuum pressed bite raising appliance in the management of TMJ disorder was found to be satisfactorily effective in alleviation of pain symptom in our study group.

Beam test of a large area silicon drift detector

International Nuclear Information System (INIS)

Castoldi, A.; Chinnici, S.; Gatti, E.; Longoni, A.; Palma, F.; Sampietro, M.; Rehak, P.; Ballocchi, G.; Kemmer, J.; Holl, P.; Cox, P.T.; Giacomelli, P.; Vacchi, A.

1992-01-01

The results from the tests of the first large area (4 x 4 cm 2 ) planar silicon drift detector prototype in a pion beam are reported. The measured position resolution in the drift direction is (σ=40 ± 10)μm

Multifunctional Graphene-Silicone Elastomer Nanocomposite, Method of Making the Same, and Uses Thereof

Science.gov (United States)

Pan, Shuyang (Inventor); Aksay, Ilhan A. (Inventor); Prud'Homme, Robert K. (Inventor)

2018-01-01

A nanocomposite composition having a silicone elastomer matrix having therein a filler loading of greater than 0.05 wt %, based on total nanocomposite weight, wherein the filler is functional graphene sheets (FGS) having a surface area of from 300 sq m/g to 2630 sq m2/g; and a method for producing the nanocomposite and uses thereof.

Large area silicon drift detectors for x-rays -- New results

International Nuclear Information System (INIS)

Iwanczyk, J.S.; Patt, B.E.; Tull, C.R.; Segal, J.D.; Kenney, C.J.; Hedman, B.; Hodgson, K.O.

1998-01-01

Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter hexagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range 75 to 25 C using Peltier cooling, and from 0.125 to 6 micros amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm 2 and 1 cm 2 detectors, respectively (at 5.9 keV, -75 C, 6 micros shaping time). The uniformity of the detector response over the entire active area (measured using 560 nm light) was < 0.5%

Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

International Nuclear Information System (INIS)

Heinrich, Martin; Kluska, Sven; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.

2013-01-01

We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes

Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity

International Nuclear Information System (INIS)

Shaforost, O.; Wang, K.; Adabi, M.; Guo, Z.; Hanham, S.; Klein, N.; Goniszewski, S.; Gallop, J.; Hao, L.

2015-01-01

A method for contact-free determination of the sheet resistance of large-area and arbitrary shaped wafers or sheets coated with graphene and other (semi) conducting ultrathin layers is described, which is based on an open dielectric loaded microwave cavity. The sample under test is exposed to the evanescent resonant field outside the cavity. A comparison with a closed cavity configuration revealed that radiation losses have no significant influence of the experimental results. Moreover, the microwave sheet resistance results show good agreement with the dc conductivity determined by four-probe van der Pauw measurements on a set of CVD samples transferred on quartz. As an example of a practical application, correlations between the sheet resistance and deposition conditions for CVD graphene transferred on quartz wafers are described. Our method has a high potential as measurement standard for contact-free sheet resistance measurement and mapping of large area graphene samples

Electrochemical depth profiling of multilayer metallic structures: An aluminum brazing sheet

International Nuclear Information System (INIS)

Afshar, F. Norouzi; Ambat, R.; Kwakernaak, C.; Wit, J.H.W. de; Mol, J.M.C.; Terryn, H.

2012-01-01

Highlights: ► Localized electrochemical cell and glow discharge optical emission spectrometry were used. ► An electrochemical depth profile of an aluminum brazing sheet was obtained. ► The electrochemical responses were correlated to the microstructural features. - Abstract: Combinatory localized electrochemical cell and glow discharge optical emission spectrometry (GDOES) measurements were performed to obtain a thorough in depth electrochemical characterization of an aluminum brazing sheet. By defining electrochemical criteria i.e. breakdown potential, corrosion potential, cathodic and anodic reactivities, and tracking their changes as a function of depth, the evolution of electrochemical responses through out the material thickness were analyzed and correlated to the corresponding microstructural features. Polarization curves in 1 wt% NaCl solution at pH 2.8 were obtained at different depths from the surface using controlled sputtering in a glow discharge optical emission spectrometer as a sample preparation technique. The anodic and cathodic reactivity of the top surface areas were significantly higher than that of the bulk, thus indicating these areas to be more susceptible to localized attack. Consistent with this, optical microscopy and scanning electron microscope analysis revealed a relatively high density of fine intermetallic and silicon particles at these areas. The corrosion mechanism of the top layers was identified to be intergranular and pitting corrosion, while lower sensitivity to these localized attacks were detected toward the brazing sheet core. The results highlight the successful application of the electrochemical depth profiling approach in prediction of the corrosion behavior of the aluminum brazing sheet and the importance of the electrochemical activity of the outer 10 μm in controlling the corrosion performance of the aluminum brazing sheet.

An investigation into the use of large area silicon semiconductors in microwave systems

International Nuclear Information System (INIS)

Holliday, H.R.

1999-09-01

Semiconductor microwave devices are usually manufactured using micron or sub-micron geometries. The equipment needed for these techniques has a high capital cost and demands high overheads. The material traditionally processed for microwave applications is gallium arsenide but during the period of this investigation a move towards the use of silicon and silicon germanium has emerged. This study, which is essentially practical, covers a range of new ideas for components using large area silicon devices. In the course of the study considerable progress has also been made in the understanding of the behaviour of silicon at microwave frequencies, and some of the initial Concepts were shown to be invalid. An accurate determination of the dielectric constant of silicon has been made using quasi optical techniques at microwave frequencies. The fabrication techniques described originate from methods used at Q-par Angus to manufacture large area silicon nuclear radiation detectors. Developed at the University of Birmingham, these are 'wet chemistry' methods that preclude the need for diffusion or other conventional semiconductor processing techniques. Novel microwave components have been developed using these techniques. These include an optically controlled attenuator with multioctave bandwidth and good dynamic range; window devices to reduce the radar cross section of microwave antennas; and microwave cavity devices including a variable-Q cavity. Concepts for millimeter wave filters are discussed, as are areas for further research. During the attenuator study Wheeler's equations have been extended to cover truncated microstrip. It was observed at an early stage in the work that optical excitation was very effective as a method of controlling the devices. This fits well with current trends in electro-optical devices. The piezo resistance effect in silicon has been briefly investigated and a mechanical attenuator exploiting this effect has been developed. (author)

Field evaluation of ZeroFly--an insecticide incorporated plastic sheeting against malaria vectors & its impact on malaria transmission in tribal area of northern Orissa.

Science.gov (United States)

Sharma, S K; Upadhyay, A K; Haque, M A; Tyagi, P K; Mohanty, S S; Mittal, P K; Dash, A P

2009-10-01

Insecticide incorporated plastic sheeting is a new technology to control mosquitoes in emergency shelter places and also temporary habitations in different locations. Therefore, field studies were conducted to assess the efficacy of ZeroFly plastic sheeting treated with deltamethrin on prevailing disease vectors Anopheles culicifacies and An. fluviatilis and its impact on malaria transmission in one of the highly endemic areas of Orissa. The study was conducted in Birkera block of Sundargarh district, Orissa state. The study area comprised 3 villages, which were randomized as ZeroFly plastic sheet, untreated plastic sheet and no sheet area. ZeroFly plastic sheets and untreated plastic sheets were fixed in study and control villages respectively covering all the rooms in each household. Longitudinal studies were conducted on the bioefficacy with the help of cone bioassays, monitoring of the mosquito density through hand catch, floor sheet and exit trap collections and fortnightly domiciliary active surveillance in all the study villages. In ZeroFly plastic sheeting area, there was a significant reduction of 84.7 per cent in the entry rate of total mosquitoes in comparison to pre-intervention phase. There was 56.2 per cent immediate mortality in total mosquitoes in houses with ZeroFly sheeting. The overall feeding success rate of mosquitoes in the trial village was only 12.5 per cent in comparison to 49.7 and 51.1 per cent in villages with untreated plastic sheet and no sheet respectively. There was a significant reduction of 65.0 and 70.5 per cent in malaria incidence in ZeroFly plastic sheeting area as compared to untreated plastic sheet and no sheet area respectively. Our study showed that introduction of ZeroFly plastic sheets in a community-based intervention programme is operationally feasible to contain malaria especially in the high transmission difficult areas.

A flexible tactile sensitive sheet using a hetero-core fiber optic sensor

Science.gov (United States)

Fujino, S.; Yamazaki, H.; Hosoki, A.; Watanabe, K.

2014-05-01

In this report, we have designed a tactile sensitive sheet based on a hetero-core fiber-optic sensor, which realize an areal sensing by using single sensor potion in one optical fiber line. Recently, flexible and wide-area tactile sensing technology is expected to applied to acquired biological information in living space and robot achieve long-term care services such as welfare and nursing-care and humanoid technology. A hetero-core fiber-optic sensor has several advantages such as thin and flexible transmission line, immunity to EMI. Additionally this sensor is sensitive to moderate bending actions with optical loss changes and is independent of temperature fluctuation. Thus, the hetero-core fiber-optic sensor can be suitable for areal tactile sensing. We measure pressure characteristic of the proposed sensitive sheet by changing the pressure position and pinching characteristic on the surface. The proposed tactile sensitive sheet shows monotonic responses on the whole sensitive sheet surface although different sensitivity by the position is observed at the sensitive sheet surface. Moreover, the tactile sensitive sheet could sufficiently detect the pinching motion. In addition, in order to realize the discrimination between pressure and pinch, we fabricated a doubled-over sensor using a set of tactile sensitive sheets, which has different kinds of silicon robbers as a sensitive sheet surface. In conclusion, the flexible material could be given to the tactile sensation which is attached under proposed sensitive sheet.

Temporomandibular joint arthroplasty for osteoarthrosis: A series of 24 patients that received a uni- or bilateral inter-positional silicone sheet.

Science.gov (United States)

Boutault, F; Cavallier, Z; Lauwers, F; Prevost, A

2018-06-01

To evaluate mid-term results from using a silicone sheet for inter-positional arthroplasty in moderate or severe cases of osteoarthrosis of the temporo-mandibular joint (TMJ). To also determine any remaining indications from this method. This retrospective study included patients that underwent surgery between 2008 and 2016. Pre- and post-operative mouth opening (MO), according to inter-incisal distance (mm) and pain score (PS: 0=no pain to 4=very severe pain) were recorded for 24 patients. Patients were divided according to thickness of the silicone sheet (group A: 1.0 mm, group B: 1.5 mm). The cohort included 22 females (92%). Mean age at surgery was 55 years±13 (26-80). Mean length of follow-up was 26 months±24 (6-80). Mean improvement in MO was 8.2 mm (+33%) and of PS was 1.7 (-68%). MO was not improved for two patients and worsened for one. PS score improved for all patients. No statistical difference was found between groups A and B. There was also a tendency for degradation of outcomes over time. The poor reputation of prosthetic discoplasty was not as evident in our series, even though anatomical and functional status seemed to deteriorate over time. This is because total-joint prosthetic replacement is often proposed instead. However, for elderly or fragile patients that have severe pain, and regarding cost-benefit aspects, conventional arthroplasty can still be discussed, especially since French national health-care insurance does not yet support TMJ prosthetic replacement for osteoarthrosis. Copyright © 2018 Elsevier Masson SAS. All rights reserved.

Silicon Ingot Casting - Heat Exchanger Method (HEM). Multi-Wire Slicing - Fixed Abrasive Slicing Technique (Fast). Phase 4 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-Cost Solar Array Project

Science.gov (United States)

Schmid, F.

1981-01-01

The crystallinity of large HEM silicon ingots as a function of heat flow conditions is investigated. A balanced heat flow at the bottom of the ingot restricts spurious nucleation to the edge of the melted-back seed in contact with the crucible. Homogeneous resistivity distribution over all the ingot has been achieved. The positioning of diamonds electroplated on wirepacks used to slice silicon crystals is considered. The electroplating of diamonds on only the cutting edge is described and the improved slicing performance of these wires evaluated. An economic analysis of value added costs of HEM ingot casting and band saw sectioning indicates the projected add on cost of HEM is well below the 1986 allocation.

Silicon Sheet Growth Development for the Large Area Sheet Task of the Low Cost Solar Array Project. Heat Exchanger Method - Ingot Casting Fixed Abrasive Method - Multi-Wire Slicing

Science.gov (United States)

Schmid, F.; Khattak, C. P.

1978-01-01

Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.

Carbon nanotube-coated silicone as a flexible and electrically conductive biomedical material

International Nuclear Information System (INIS)

Matsuoka, Makoto; Akasaka, Tsukasa; Totsuka, Yasunori; Watari, Fumio

2012-01-01

Artificial cell scaffolds that support cell adhesion, growth, and organization need to be fabricated for various purposes. Recently, there have been increasing reports of cell patterning using electrical fields. We fabricated scaffolds consisting of silicone sheets coated with single-walled (SW) or multi-walled (MW) carbon nanotubes (CNTs) and evaluated their electrical properties and biocompatibility. We also performed cell alignment with dielectrophoresis using CNT-coated sheets as electrodes. Silicone coated with 10 μg/cm 2 SWCNTs exhibited the least sheet resistance (0.8 kΩ/sq); its conductivity was maintained even after 100 stretching cycles. CNT coating also improved cell adhesion and proliferation. When an electric field was applied to the cell suspension introduced on the CNT-coated scaffold, the cells became aligned in a pearl-chain pattern. These results indicate that CNT coating not only provides electro-conductivity but also promotes cell adhesion to the silicone scaffold; cells seeded on the scaffold can be organized using electricity. These findings demonstrate that CNT-coated silicone can be useful as a biocompatible scaffold. - Highlights: ► We fabricated a CNT-coated silicone which has conductivity and biocompatibility. ► The conductivity was maintained after 100 cycles of stretching. ► CNT coatings enabled C2C12 cells adhere to the silicone surface. ► Cells were aligned with dielectrophoresis between CNT-coated silicone surfaces.

Optical properties of amorphous silicon: Some problem areas

International Nuclear Information System (INIS)

Ravindra, N.M.; Chelle, F. de; Ance, C.; Ferraton, J.P.; Berger, J.M.; Coulibaly, S.P.

1983-08-01

In this presentation we essentially attempt to throw light on some problem areas concerning the various optical properties of amorphous silicon. The problems seem to emerge from the classical methods employed to determine the optical properties like the optical gap, urbach tail parameter and other related characteristics. Additional problems have emerged in recent years by virtue of many attempts to generalize the property-behaviour relationships for amorphous silicon without attributing any importance to the method of preparation of the films. It should be noted here that although many authors believe disorder to be the controlling parameter, we are of the opinion that at least for films containing fairly large concentrations of hydrogen, the hydrogen concentration has an equally important role to play. The present study has been carried out for films prepared by glow-discharge and chemical vapour deposition. (author)

Low cost solar array project. Cell and module formation research area. Process research of non-CZ silicon material

Science.gov (United States)

1983-01-01

Liquid diffusion masks and liquid dopants to replace the more expensive CVD SiO2 mask and gaseous diffusion processes were investigated. Silicon pellets were prepared in the silicon shot tower; and solar cells were fabricated using web grown where the pellets were used as a replenishment material. Verification runs were made using the boron dopant and liquid diffusion mask materials. The average of cells produced in these runs was 13%. The relationship of sheet resistivity, temperature, gas flows, and gas composition for the diffusion of the P-8 liquid phosphorus solution was investigated. Solar cells processed from web grown from Si shot material were evaluated, and results qualified the use of the material produced in the shot tower for web furnace feed stock.

High Surface Area of Porous Silicon Drives Desorption of Intact Molecules

Science.gov (United States)

Northen, Trent R.; Woo, Hin-Koon; Northen, Michael T.; Nordström, Anders; Uritboonthail, Winnie; Turner, Kimberly L.; Siuzdak, Gary

2007-01-01

The surface structure of porous silicon used in desorption/ionization on porous silicon (DIOS) mass analysis is known to play a primary role in the desorption/ionization (D/I) process. In this study, mass spectrometry and scanning electron microscopy (SEM) are used to examine the correlation between intact ion generation with surface ablation, and surface morphology. The DIOS process is found to be highly laser energy dependent and correlates directly with the appearance of surface ions (Sin+ and OSiH+). A threshold laser energy for DIOS is observed (10 mJ/cm2), which supports that DIOS is driven by surface restructuring and is not a strictly thermal process. In addition, three DIOS regimes are observed which correspond to surface restructuring and melting. These results suggest that higher surface area silicon substrates may enhance DIOS performance. A recent example which fits into this mechanism is silicon nanowires surface which have a high surface energy and concomitantly requires lower laser energy for analyte desorpton. PMID:17881245

A facile alternative technique for large-area graphene transfer via sacrificial polymer

Directory of Open Access Journals (Sweden)

Eric Auchter

2017-12-01

Full Text Available A novel method of transferring large-area graphene sheets onto a variety of substrates using Formvar (polyvinyl formal is presented. Due to the ease at which formvar can be dissolved in chloroform this method allows for a consistent, a clean, and a more rapid transfer than other techniques including the PMMA assisted one. This novel transfer method is demonstrated by transferring large-area graphene onto a range of substrates including commercial TEM grids, silicon dioxide and glass. Raman spectroscopy was used to confirm the presence of graphene and characterize the morphological properties of the large-area sheets. SEM and AFM analyses demonstrated the effectiveness of our rapid transfer technique for clean crystalline large-area graphene sheets. The removal of the sacrificial polymer was found to be one to two orders of magnitude faster than PMMA methods. Ultimately this facile transfer technique offers new opportunities for a wide range of applications for large-area graphene through the utilization of a new sacrificial polymer.

A large area silicon UCN detector with the analysis of UCN polarization

International Nuclear Information System (INIS)

Lasakov, M.S.; Serebrov, A.P.; Khusainov, A.Kh.; Pustovoit, A.; Borisov, Yu.V.; Fomin, A.K.; Geltenbort, P.; Kon'kov, O.I.; Kotina, I.M.; Shablii, A.I.; Solovei, V.A.; Vasiliev, A.V.

2005-01-01

A silicon UCN detector with an area of 45cm 2 and with a 6 LiF converter was developed at PNPI. The spectral efficiency of the silicon UCN detector was measured by means of a gravitational spectrometer at ILL. The sandwich-type detector from two silicon plates with a 6 LiF converter placed between them was also studied. Using this type of technology the UCN detector with analysis of polarization was developed and tested. The analyzing power of this detector assembly reaches up to 75% for the main part of UCN spectrum. This UCN detector with analysis of UCN polarization can be used in the new EDM spectrometer

Effect of Temperature and Sheet Temper on Isothermal Solidification Kinetics in Clad Aluminum Brazing Sheet

Science.gov (United States)

Benoit, Michael J.; Whitney, Mark A.; Wells, Mary A.; Winkler, Sooky

2016-09-01

Isothermal solidification (IS) is a phenomenon observed in clad aluminum brazing sheets, wherein the amount of liquid clad metal is reduced by penetration of the liquid clad into the core. The objective of the current investigation is to quantify the rate of IS through the use of a previously derived parameter, the Interface Rate Constant (IRC). The effect of peak temperature and initial sheet temper on IS kinetics were investigated. The results demonstrated that IS is due to the diffusion of silicon (Si) from the liquid clad layer into the solid core. Reduced amounts of liquid clad at long liquid duration times, a roughened sheet surface, and differences in resolidified clad layer morphology between sheet tempers were observed. Increased IS kinetics were predicted at higher temperatures by an IRC model as well as by experimentally determined IRC values; however, the magnitudes of these values are not in good agreement due to deficiencies in the model when applied to alloys. IS kinetics were found to be higher for sheets in the fully annealed condition when compared with work-hardened sheets, due to the influence of core grain boundaries providing high diffusivity pathways for Si diffusion, resulting in more rapid liquid clad penetration.

Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

Science.gov (United States)

1981-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

Efficient tunable luminescence of SiGe alloy sheet polymers

International Nuclear Information System (INIS)

Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

2001-01-01

Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics

New techniques used to realize silicon photocells

International Nuclear Information System (INIS)

Siffert, P.

1978-01-01

The techniques used to realize the terrestrial silicon solar cells being considered the possible improvements of these methods are discussed. The various approaches under development to prepare silicon sheets in a continuous way are considered for both self-supporting or substrate deposited layers. Finally, the various methods used or under investigation to obtain the surface potential barrier are considered; MIS, heterojunction and ion implantation [fr

High surface area silicon materials: fundamentals and new technology.

Science.gov (United States)

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

Hydrogen-terminated mesoporous silicon monoliths with huge surface area as alternative Si-based visible light-active photocatalysts

KAUST Repository

Li, Ting; Li, Jun; Zhang, Qiang; Blazeby, Emma; Shang, Congxiao; Xu, Hualong; Zhang, Xixiang; Chao, Yimin

2016-01-01

Silicon-based nanostructures and their related composites have drawn tremendous research interest in solar energy storage and conversion. Mesoporous silicon with a huge surface area of 400-900 m2 g-1 developed by electrochemical etching exhibits

Silylated functionalized silicon-based composite as anode with excellent cyclic performance for lithium-ion battery

Science.gov (United States)

Li, Xiao; Tian, Xiaodong; Yang, Tao; Wang, Wei; Song, Yan; Guo, Quangui; Liu, Zhanjun

2018-05-01

Inferior cycling stability and rate performance respectively caused by rigorous volume change and poor electrical conductivity were the main challenge of state-of-the-art Silicon-based electrode. In this work, silylated functionalized exfoliated graphite oxide (EGO)/silicon@amorphous carbon (3-APTS-EGO/Si@C) was synthesized by adopting silane as intermediate to connect Si particles with EGO sheets followed by introduction of amorphous carbon. The result suggested that 3-Aminopropyltriethoxysilan connected the EGO sheets and Si nanoparticles via covalent bonds. Owing to the strong covalent interaction and the synergistic effect between the silicon, EGO sheets and amorphous carbon, 3-APTS-EGO/Si@C composite possessed a high capacity of 774 mAh g-1 even after 450 cycles at 0.4 A g-1 with the retention capacity of 97%. This work also provided an effective strategy to improve the long cycling life performance of Si-based electrode.

Greenland surface mass-balance observations from the ice-sheet ablation area and local glaciers

NARCIS (Netherlands)

Machguth, Horst; Thomsen, Henrik H.; Weidick, Anker; Ahlstrøm, Andreas P.; Abermann, Jakob; Andersen, Morten L.; Andersen, Signe B.; Bjørk, Anders A.; Box, Jason E.; Braithwaite, Roger J.; Bøggild, Carl E.; Citterio, Michele; Clement, Poul; Colgan, William; Fausto, Robert S.; Gleie, Karin; Gubler, Stefanie; Hasholt, Bent; Hynek, Bernhard; Knudsen, Niels T.; Larsen, Signe H.; Mernild, Sebastian H.; Oerlemans, Johannes; Oerter, Hans; Olesen, Ole B.; Smeets, C. J P Paul; Steffen, Konrad; Stober, Manfred; Sugiyama, Shin; Van As, Dirk; Van Den Broeke, Michiel R.; Van De Wal, Roderik S W

2016-01-01

Glacier surface mass-balance measurements on Greenland started more than a century ago, but no compilation exists of the observations from the ablation area of the ice sheet and local glaciers. Such data could be used in the evaluation of modelled surface mass balance, or to document changes in

Silicon Ingot Casting - Heat Exchanger Method Multi-wire Slicing - Fixed Abrasive Slicing Technique. Phase 3 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-cost Solar Array Project

Science.gov (United States)

Schmid, F.; Khattak, C. P.

1979-01-01

Several 20 cm diameter silicon ingots, up to 6.3 kg. were cast with good crystallinity. The graphite heat zone can be purified by heating it to high temperatures in vacuum. This is important in reducing costs and purification of large parts. Electroplated wires with 45 um synthetic diamonds and 30 um natural diamonds showed good cutting efficiency and lifetime. During slicing of a 10 cm x 10 cm workpiece, jerky motion occurred in the feed and rocking mechanisms. This problem is corrected and modifications were made to reduce the weight of the bladeheat by 50%.

Greenland surface mass-balance observations from the ice-sheet ablation area and local glaciers

DEFF Research Database (Denmark)

Machguth, Horst; Thomsen, Henrik H.; Weidick, Anker

2016-01-01

Glacier surface mass-balance measurements on Greenland started more than a century ago, but no compilation exists of the observations from the ablation area of the ice sheet and local glaciers. Such data could be used in the evaluation of modelled surface mass balance, or to document changes in g...

Weld Repair of Thin Aluminum Sheet

Science.gov (United States)

Beuyukian, C. S.; Mitchell, M. J.

1986-01-01

Weld repairing of thin aluminum sheets now possible, using niobium shield and copper heat sinks. Refractory niobium shield protects aluminum adjacent to hole, while copper heat sinks help conduct heat away from repair site. Technique limits tungsten/inert-gas (TIG) welding bombardment zone to melt area, leaving surrounding areas around weld unaffected. Used successfully to repair aluminum cold plates on Space Shuttle, Commercial applications, especially in sealing fractures, dents, and holes in thin aluminum face sheets or clad brazing sheet in cold plates, heat exchangers, coolers, and Solar panels. While particularly suited to thin aluminum sheet, this process also used in thicker aluminum material to prevent surface damage near weld area.

Energy response of neutron area monitor with silicon semiconductor detector

International Nuclear Information System (INIS)

Kitaguchi, Hiroshi; Izumi, Sigeru; Kobayashi, Kaoru; Kaihara, Akihisa; Nakamura, Takashi.

1993-01-01

A prototype neutron area monitor with a silicon semiconductor detector has been developed which has the energy response of 1 cm dose equivalent recommended by the ICRP-26. Boron and proton radiators are coated on the surface of the silicon semiconductor detector. The detector is set at the center of a cylindrical polyethylene moderator. This moderator is covered by a porous cadmium board which serves as the thermal neutron absorber. Neutrons are detected as α-particles generated by the nuclear reaction 10 B(n,α) 7 Li and as recoil protons generated by the interaction of fast neutrons with hydrogen. The neutron energy response of the monitor was measured using thermal neutrons and monoenergetic fast neutrons generated by an accelerator. The response was consistent with the 1 cm dose equivalent response required for the monitor within ±34% in the range of 0.025 - 15 Mev. (author)

Megavoltage imaging with a large-area, flat-panel, amorphous silicon imager

International Nuclear Information System (INIS)

Antonuk, Larry E.; Yorkston, John; Huang Weidong; Sandler, Howard; Siewerdsen, Jeffrey H.; El-Mohri, Youcef

1996-01-01

Purpose: The creation of the first large-area, amorphous silicon megavoltage imager is reported. The imager is an engineering prototype built to serve as a stepping stone toward the creation of a future clinical prototype. The engineering prototype is described and various images demonstrating its properties are shown including the first reported patient image acquired with such an amorphous silicon imaging device. Specific limitations in the engineering prototype are reviewed and potential advantages of future, more optimized imagers of this type are presented. Methods and Materials: The imager is based on a two-dimensional, pixelated array containing amorphous silicon field-effect transistors and photodiode sensors which are deposited on a thin glass substrate. The array has a 512 x 560-pixel format and a pixel pitch of 450 μm giving an imaging area of ∼23 x 25 cm 2 . The array is used in conjunction with an overlying metal plate/phosphor screen converter as well as an electronic acquisition system. Images were acquired fluoroscopically using a megavoltage treatment machine. Results: Array and digitized film images of a variety of anthropomorphic phantoms and of a human subject are presented and compared. The information content of the array images generally appears to be at least as great as that of the digitized film images. Conclusion: Despite a variety of severe limitations in the engineering prototype, including many array defects, a relatively slow and noisy acquisition system, and the lack of a means to generate images in a radiographic manner, the prototype nevertheless generated clinically useful information. The general properties of these amorphous silicon arrays, along with the quality of the images provided by the engineering prototype, strongly suggest that such arrays could eventually form the basis of a new imaging technology for radiotherapy localization and verification. The development of a clinically useful prototype offering high

Process research of non-CZ silicon material

Science.gov (United States)

Campbell, R. B.

1984-01-01

Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

Large-Area Silicon Detectors for the CMS High Granularity Calorimeter

CERN Document Server

Pree, Elias

2017-01-01

During the so-called Phase-2 Upgrade, the CMS experiment at CERN will undergo significant improvements to cope with the 10-fold luminosity increase of the High Luminosity LHC (HL-LHC) era. Especially the forward calorimetry will suffer from very high radiation levels and intensified pileup in the detectors. For this reason, the CMS collaboration is designing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. It features unprecedented transverse and longitudinal segmentation for both electromagnetic (CE-E) and hadronic (CE-H) compartments. The CE-E and a large fraction of CE-H will consist of a sandwich structure with silicon as active detector material. This paper presents an overview of the ongoing sensor development for the HGCAL and highlights important design features and measurement techniques. The design and layout of an 8-inch silicon sensor prototype is shown. The hexagonal sensors consist of 235 pads, each with an area of about \\mbox{1~cm$^{2}$}. Furthermore, Synopsys...

The effect of baking conditions on the effective contact areas of screen-printed silver layer on silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Tietun Sun; Jianmin Miao; Rongming Lin; Yongqing Fu [Nanyang Technological Univ., Micromachines Lab., Singapore (Singapore)

2005-01-01

In this paper, Ag-based paste was screen-printed on polished as well as on textured p-type (100) single crystalline silicon wafers. Three types of baking processes were studied: the tube furnace, the belt furnace and the hot plate baking. The effective contact areas of Ag/Si system were measured with a novel method, namely metal insulator semiconductor structure measurement. The results show that after baking on the hot plate at 400 deg C for 5 min, the size and number of pores in the Ag film layer as well as at the interface between silver layer and silicon decreases significantly, the effective contact area also increases about 20%, particularly on the textured silicon substrate. (Author)

The effect of baking conditions on the effective contact areas of screen-printed silver layer on silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Sun, Tietun; Miao, Jianmin; Lin, Rongming; Fu, Yongqing [Micromachines Laboratory, School of Mechanical and Production Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2005-01-01

In this paper, Ag-based paste was screen-printed on the polished as well as on the textured p-type (100) single crystalline silicon wafers. Three types of baking processes were studied: the tube furnace, the belt furnace and the hot plate baking. The effective contact areas of Ag/Si system were measured with a novel method, namely metal insulator semiconductor structure measurement. The results show that after baking on the hot plate at 400{sup o}C for 5min, the size and number of pores in the Ag film layer as well as at the interface between silver layer and silicon decreases significantly, the effective contact area also increases about 20%, particularly on the textured silicon substrate.

Application of CBD-Zinc Sulfide Film as an Antireflection Coating on Very Large Area Multicrystalline Silicon Solar Cell

Directory of Open Access Journals (Sweden)

U. Gangopadhyay

2007-01-01

Full Text Available The low-cost chemical bath deposition (CBD technique is used to prepare CBD-ZnS films as antireflective (AR coating for multicrystalline silicon solar cells. The uniformity of CBD-ZnS film on large area of textured multicrystalline silicon surface is the major challenge of CBD technique. In the present work, attempts have been made for the first time to improve the rate of deposition and uniformity of deposited film by controlling film stoichiometry and refractive index and also to minimize reflection loss by proper optimization of molar percentage of different chemical constituents and deposition conditions. Reasonable values of film deposition rate (12.13 Å′/min., good film uniformity (standard deviation <1, and refractive index (2.35 along with a low percentage of average reflection (6-7% on a textured mc-Si surface are achieved with proper optimization of ZnS bath. 12.24% efficiency on large area (125 mm × 125 mm multicrystalline silicon solar cells with CBD-ZnS antireflection coating has been successfully fabricated. The viability of low-cost CBD-ZnS antireflection coating on large area multicrystalline silicon solar cell in the industrial production level is emphasized.

Wafer-level integration of NiTi shape memory alloy on silicon using Au–Si eutectic bonding

International Nuclear Information System (INIS)

Gradin, Henrik; Bushra, Sobia; Braun, Stefan; Stemme, Göran; Van der Wijngaart, Wouter

2013-01-01

This paper reports on the wafer level integration of NiTi shape memory alloy (SMA) sheets with silicon substrates through Au–Si eutectic bonding. Different bond parameters, such as Au layer thicknesses and substrate surface treatments were evaluated. The amount of gold in the bond interface is the most important parameter to achieve a high bond yield; the amount can be determined by the barrier layers between the Au and Si or by the amount of Au deposition. Deposition of a gold layer of more than 1 μm thickness before bonding gives the most promising results. Through patterning of the SMA sheet and by limiting bonding to small areas, stresses created by the thermal mismatch between Si and NiTi are reduced. With a gold layer of 1 μm thickness and bond areas between 200 × 200 and 800 × 800 μm 2 a high bond strength and a yield above 90% is demonstrated. (paper)

Large-area 2D periodic crystalline silicon nanodome arrays on nanoimprinted glass exhibiting photonic band structure effects

International Nuclear Information System (INIS)

Becker, C; Lockau, D; Sontheimer, T; Rech, B; Schubert-Bischoff, P; Rudigier-Voigt, E; Bockmeyer, M; Schmidt, F

2012-01-01

Two-dimensional silicon nanodome arrays are prepared on large areas up to 50 cm 2 exhibiting photonic band structure effects in the near-infrared and visible wavelength region by downscaling a recently developed fabrication method based on nanoimprint-patterned glass, high-rate electron-beam evaporation of silicon, self-organized solid phase crystallization and wet-chemical etching. The silicon nanodomes, arranged in square lattice geometry with 300 nm lattice constant, are optically characterized by angular resolved reflection measurements, allowing the partial determination of the photonic band structure. This experimentally determined band structure agrees well with the outcome of three-dimensional optical finite-element simulations. A 16% photonic bandgap is predicted for an optimized geometry of the silicon nanodome arrays. By variation of the duration of the selective etching step, the geometry as well as the optical properties of the periodic silicon nanodome arrays can be controlled systematically. (paper)

Diffusive Silicon Nanopore Membranes for Hemodialysis Applications.

Directory of Open Access Journals (Sweden)

Steven Kim

Full Text Available Hemodialysis using hollow-fiber membranes provides life-sustaining treatment for nearly 2 million patients worldwide with end stage renal disease (ESRD. However, patients on hemodialysis have worse long-term outcomes compared to kidney transplant or other chronic illnesses. Additionally, the underlying membrane technology of polymer hollow-fiber membranes has not fundamentally changed in over four decades. Therefore, we have proposed a fundamentally different approach using microelectromechanical systems (MEMS fabrication techniques to create thin-flat sheets of silicon-based membranes for implantable or portable hemodialysis applications. The silicon nanopore membranes (SNM have biomimetic slit-pore geometry and uniform pores size distribution that allow for exceptional permeability and selectivity. A quantitative diffusion model identified structural limits to diffusive solute transport and motivated a new microfabrication technique to create SNM with enhanced diffusive transport. We performed in vitro testing and extracorporeal testing in pigs on prototype membranes with an effective surface area of 2.52 cm2 and 2.02 cm2, respectively. The diffusive clearance was a two-fold improvement in with the new microfabrication technique and was consistent with our mathematical model. These results establish the feasibility of using SNM for hemodialysis applications with additional scale-up.

Diffusive Silicon Nanopore Membranes for Hemodialysis Applications

Science.gov (United States)

Kim, Steven; Feinberg, Benjamin; Kant, Rishi; Chui, Benjamin; Goldman, Ken; Park, Jaehyun; Moses, Willieford; Blaha, Charles; Iqbal, Zohora; Chow, Clarence; Wright, Nathan; Fissell, William H.; Zydney, Andrew; Roy, Shuvo

2016-01-01

Hemodialysis using hollow-fiber membranes provides life-sustaining treatment for nearly 2 million patients worldwide with end stage renal disease (ESRD). However, patients on hemodialysis have worse long-term outcomes compared to kidney transplant or other chronic illnesses. Additionally, the underlying membrane technology of polymer hollow-fiber membranes has not fundamentally changed in over four decades. Therefore, we have proposed a fundamentally different approach using microelectromechanical systems (MEMS) fabrication techniques to create thin-flat sheets of silicon-based membranes for implantable or portable hemodialysis applications. The silicon nanopore membranes (SNM) have biomimetic slit-pore geometry and uniform pores size distribution that allow for exceptional permeability and selectivity. A quantitative diffusion model identified structural limits to diffusive solute transport and motivated a new microfabrication technique to create SNM with enhanced diffusive transport. We performed in vitro testing and extracorporeal testing in pigs on prototype membranes with an effective surface area of 2.52 cm2 and 2.02 cm2, respectively. The diffusive clearance was a two-fold improvement in with the new microfabrication technique and was consistent with our mathematical model. These results establish the feasibility of using SNM for hemodialysis applications with additional scale-up. PMID:27438878

Characterization of an amorphous silicon flat panel for controlling the positioning accuracy of sheet; Caracterizacion de un panel plano de silicio amorfo para control de la exactitud en el posicionamiento de laminas

Energy Technology Data Exchange (ETDEWEB)

Martinez, J.; Gonzalez, V.; Gimeno, J.; Dolores, V. de los; Pastor, V.; Crispin, V.; Guardino, C.

2011-07-01

It has established a method for measuring the position of the blades in a multi leaf collimator (MLC) used to measure dose portal imaging device (EPID) of amorphous silicon, and verified its accuracy using radiochromic films and measures water with diode Cuba, techniques perfectly well validated in our institution. This dose profiles are studied for each sheet and determine their position at the point which has 50% of the dose in the open field.

Radiation protecting sheet

International Nuclear Information System (INIS)

Makiguchi, Hiroshi.

1989-01-01

As protection sheets used in radioactivity administration areas, a thermoplastic polyurethane composition sheet with a thickness of less 0.5 mm, solid content (ash) of less than 5% and a shore D hardness of less than 60 is used. A composite sheet with thickness of less than 0.5 mm laminated or coated with such a thermoplastic polyurethane composition as a surface layer and the thermoplastic polyurethane composition sheet applied with secondary fabrication are used. This can satisfy all of the required properties, such as draping property, abrasion resistance, high breaking strength, necking resistance, endurance strength, as well as chemical resistance and easy burnability in burning furnace. Further, by forming uneveness on the surface by means of embossing, etc. safety problems such as slippage during operation and walking can be overcome. (T.M.)

Silicon microphones - a Danish perspective

DEFF Research Database (Denmark)

Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

1998-01-01

Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

Minority carrier diffusion lengths and absorption coefficients in silicon sheet material

Science.gov (United States)

Dumas, K. A.; Swimm, R. T.

1980-01-01

Most of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.

Research on Al-alloy sheet forming formability during warm/hot sheet hydroforming based on elliptical warm bulging test

Science.gov (United States)

Cai, Gaoshen; Wu, Chuanyu; Gao, Zepu; Lang, Lihui; Alexandrov, Sergei

2018-05-01

An elliptical warm/hot sheet bulging test under different temperatures and pressure rates was carried out to predict Al-alloy sheet forming limit during warm/hot sheet hydroforming. Using relevant formulas of ultimate strain to calculate and dispose experimental data, forming limit curves (FLCS) in tension-tension state of strain (TTSS) area are obtained. Combining with the basic experimental data obtained by uniaxial tensile test under the equivalent condition with bulging test, complete forming limit diagrams (FLDS) of Al-alloy are established. Using a quadratic polynomial curve fitting method, material constants of fitting function are calculated and a prediction model equation for sheet metal forming limit is established, by which the corresponding forming limit curves in TTSS area can be obtained. The bulging test and fitting results indicated that the sheet metal FLCS obtained were very accurate. Also, the model equation can be used to instruct warm/hot sheet bulging test.

Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

DEFF Research Database (Denmark)

Sun, Jie; Lindvall, Niclas; Cole, Matthew T.

2012-01-01

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes...

Optimization of oxidation processes to improve crystalline silicon solar cell emitters

Directory of Open Access Journals (Sweden)

L. Shen

2014-02-01

Full Text Available Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 1020 cm−3 and 7.78 × 1020 cm−3 and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%abs compared to conventional emitters with 50 Ω/□ sheet resistance.

Carbon sheet pumping

International Nuclear Information System (INIS)

Ohyabu, N.; Sagara, A.; Kawamura, T.; Motojima, O.; Ono, T.

1993-07-01

A new hydrogen pumping scheme has been proposed which controls recycling of the particles for significant improvement of the energy confinement in toroidal magnetic fusion devices. In this scheme, a part of the vacuum vessel surface near the divertor is covered with carbon sheets of a large surface area. Before discharge initiation, the sheets are baked up to 700 ∼ 1000degC to remove the previously trapped hydrogen atoms. After being cooled down to below ∼ 200degC, the unsaturated carbon sheets trap high energy charge exchange hydrogen atoms effectively during a discharge and overall pumping efficiency can be as high as ∼ 50 %. (author)

Gamma Large Area Silicon Telescope (GLAST)

International Nuclear Information System (INIS)

Godfrey, G.L.

1993-11-01

The recent discoveries and excitement generated by EGRET have prompted an investigation into modern technologies ultimately leading to the next generation space-based gamma ray telescope. The goal is to design a detector that will increase the data acquisition rate by almost two orders of magnitude beyond EGRET, while at the same time improving on the angular resolution, the energy measurement of reconstructed gamma rays, and the triggering capability of the instrument. The GLAST proposal is based on the assertion that silicon particle detectors are the technology of choice for space application: no consumables, no gas volume, robust (versus fragile), long lived, and self triggering. The GLAST detector is roughly modeled after EGRET in that a tracking module precedes a calorimeter. The GLAST Tracker has planes of thin radiatior interspersed with planes of crossed-strip (x,y) 300-μm-pitch silicon detectors to measure the coordinates of converted electron-positron pairs. The gap between the layers (∼5 cm) provides a lever arm in track fitting resulting in an angular resolution of 0.1 degree at high energy (the low energy angular resolution at 100 MeV would be about 2 degree, limited by multiple scattering). A possible GLAST calorimeter is made of a mosaic of Csl crystals of order 10 r.l. in depth, with silicon photodiodes readout. The increased depth of the GLAST calorimeter over EGRET's extends the energy range to about 300 GeV

Balance of the West Antarctic Ice Sheet

Science.gov (United States)

2002-01-01

For several decades, measurements of the West Antarctic Ice Sheet showed it to be retreating rapidly. But new data derived from satellite-borne radar sensors show the ice sheet to be growing. Changing Antarctic ice sheets remains an area of high scientific interest, particularly in light of recent global warming concerns. These new findings are significant because scientists estimate that sea level would rise 5-6 meters (16-20 feet) if the ice sheet collapsed into the sea. Do these new measurements signal the end of the ice sheet's 10,000-year retreat? Or, are these new satellite data simply much more accurate than the sparse ice core and surface measurements that produced the previous estimates? Another possibility is that the ice accumulation may simply indicate that the ice sheet naturally expands and retreats in regular cycles. Cryologists will grapple with these questions, and many others, as they examine the new data. The image above depicts the region of West Antarctica where scientists measured ice speed. The fast-moving central ice streams are shown in red. Slower tributaries feeding the ice streams are shown in blue. Green areas depict slow-moving, stable areas. Thick black lines depict the areas that collect snowfall to feed their respective ice streams. Reference: Ian Joughin and Slawek Tulaczyk Science Jan 18 2002: 476-480. Image courtesy RADARSAT Antarctic Mapping Project

Reaction sintering of two-dimensional silicon carbide fiber-reinforced silicon carbide composite by sheet stacking method

International Nuclear Information System (INIS)

Yoshida, Katsumi; Mukai, Hideki; Imai, Masamitsu; Hashimoto, Kazuaki; Toda, Yoshitomo; Hyuga, Hideki; Kondo, Naoki; Kita, Hideki; Yano, Toyohiko

2007-01-01

Two-dimensionally plain woven SiC fiber-reinforced SiC composite has been developed by reaction sintering using a sheet stacking method in order to further increase mechanical and thermal properties of the composite and to obtain flexibility of manufacturing process of 2D woven SiC/SiC composites which can be applied to the fabrication of larger parts. In addition, sinterability and mechanical properties of the composite were investigated. In this study, relative density of the composites was about 90-93% and a dense composite could be obtained by reaction sintering using the sheet stacking method. The bulk density and maximum bending strength of SiC/SiC composite with a C/SiC weight ratio of 0.6 were higher than that of the composite with C/SiC ratios of 0.5 or 0.7. The values were 2.9 g/cm 3 and 200 MPa, respectively. However, the composites obtained in this study fractured in almost brittle manner due to the lower fiber volume fraction

Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

Science.gov (United States)

Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

2015-09-07

Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Final Air Toxics Standards for Clay Ceramics Manufacturing, Glass Manufacturing, and Secondary Nonferrous Metals Processing Area Sources Fact Sheet

Science.gov (United States)

This page contains a December 2007 fact sheet with information regarding the National Emissions Standards for Hazardous Air Pollutants (NESHAP) for Clay Ceramics Manufacturing, Glass Manufacturing, and Secondary Nonferrous Metals Processing Area Sources

Closure Report for Corrective Action Unit 271: Areas 25, 26, and 27 Septic Systems, Nevada Test Site, Nevada with Errata Sheet, Revision 0

Energy Technology Data Exchange (ETDEWEB)

Mark Krauss

2004-08-01

The purpose of this CR is to document that closure activities have met the approved closure standards detailed in the NDEP-approved CAP for CAU 271. The purpose of the Errata Sheet is as follows: In Appendix G, Use Restriction (UR) Documentation, the UR form and drawing of the UR area do not reflect the correct coordinates. Since the original UR was put into place, the UR Form has been updated to include additional information that was not on the original form. This Errata Sheet replaces the original UR Form and drawing. In place of the drawing of the UR area, an aerial photograph is included which reflects the UR area and the correct coordinates for the UR area.

Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

OpenAIRE

Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón

2014-01-01

The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the tra...

Tailoring the Electronic and Magnetic Properties of Two-Dimensional Silicon Carbide Sheets and Ribbons by Fluorination

KAUST Repository

Shi, Zhiming

2016-07-12

Fluorination has been instrumental for tuning the properties of several two-dimensional (2D) materials, including graphene, h-BN, and MoS2. However, its potential application has not yet been explored in 2D silicon carbide (SiC), a promising material for nanoelectronic devices. We investigate the structural, electronic, and magnetic properties of fully and partially fluorinated 2D SiC sheets and nanoribbons by means of density functional theory combined with cluster expansion calculations. We find that fully fluorinated 2D SiC exhibits chair configurations and a nonmagnetic semiconducting behavior. Fluorination is shown to be an efficient approach for tuning the band gap. Four ground states of partially fluorinated SiC, SiCF2x with x = 0.0625, 0.25, 0.5, 0.75, are obtained by cluster expansion calculations. All of them exhibit nanoroad patterns, with the x = 0.5 structure identified as the most stable one. The x = 0.0625 structure is a nonmagnetic metal, while the other three are all ferromagnetic half-metals, whose properties are not affected by the edge states. We propose an effective approach for modulating the electronic and magnetic behavior of 2D SiC, paving the way to applications of SiC nanostructures in integrated multifunctional and spintronic nanodevices. © 2016 American Chemical Society.

Tailoring the Electronic and Magnetic Properties of Two-Dimensional Silicon Carbide Sheets and Ribbons by Fluorination

KAUST Repository

Shi, Zhiming; Kutana, Alex; Yu, Guangtao; Chen, Wei; Yakobson, Boris I.; Schwingenschlö gl, Udo; Huang, Xuri

2016-01-01

Fluorination has been instrumental for tuning the properties of several two-dimensional (2D) materials, including graphene, h-BN, and MoS2. However, its potential application has not yet been explored in 2D silicon carbide (SiC), a promising material for nanoelectronic devices. We investigate the structural, electronic, and magnetic properties of fully and partially fluorinated 2D SiC sheets and nanoribbons by means of density functional theory combined with cluster expansion calculations. We find that fully fluorinated 2D SiC exhibits chair configurations and a nonmagnetic semiconducting behavior. Fluorination is shown to be an efficient approach for tuning the band gap. Four ground states of partially fluorinated SiC, SiCF2x with x = 0.0625, 0.25, 0.5, 0.75, are obtained by cluster expansion calculations. All of them exhibit nanoroad patterns, with the x = 0.5 structure identified as the most stable one. The x = 0.0625 structure is a nonmagnetic metal, while the other three are all ferromagnetic half-metals, whose properties are not affected by the edge states. We propose an effective approach for modulating the electronic and magnetic behavior of 2D SiC, paving the way to applications of SiC nanostructures in integrated multifunctional and spintronic nanodevices. © 2016 American Chemical Society.

Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

KAUST Repository

Rojas, Jhonathan Prieto

2013-10-01

Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\\ m cm}2 and thickness: 25 \\\\mu{\\ m m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

Recent developments in low cost silicon solar cells for terrestrial applications. [sheet production methods

Science.gov (United States)

Leipold, M. H.

1978-01-01

A variety of techniques may be used for photovoltaic energy systems. Concentrated or not concentrated sunlight may be employed, and a number of materials can be used, including silicon, gallium arsenide, cadmium sulfide, and cadmium telluride. Most of the experience, however, has been obtained with silicon cells employed without sunlight concentration. An industrial base exists at present for producing solar cells at a price in the range from $15 to $30 per peak watt. A major federal program has the objective to reduce the price of power provided by silicon solar systems to approximately $1 per peak watt in the early 1980's and $0.50 per watt by 1986. The approaches considered for achieving this objective are discussed.

Process for forming a porous silicon member in a crystalline silicon member

Science.gov (United States)

Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

1999-01-01

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

Large area CNT-Si heterojunction for photodetection

Energy Technology Data Exchange (ETDEWEB)

Aramo, C., E-mail: aramo@na.infn.it [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, M.; Bonavolontà, C. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Boscardin, M.; Crivellari, M. [Centro per Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Via Sommarive 18, Povo di Trento, 38123 Trento (Italy); Lisio, C. de [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dip. Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Grossi, V. [INFN, Sezione di L' Aquila and Dip. Scienze Fisiche e Chimiche, Università degli Studi dell' Aquila, Via Vetoio, Coppito, 67100 L' Aquila (Italy); Maddalena, P. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dip. Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Passacantando, M. [INFN, Sezione di L' Aquila and Dip. Scienze Fisiche e Chimiche, Università degli Studi dell' Aquila, Via Vetoio, Coppito, 67100 L' Aquila (Italy); Valentino, M. [CNR-SPIN UOS di Napoli, Via Cintia 2, 80126 Napoli (Italy)

2017-02-11

Multiwall carbon nanotubes (MWCNTs) consist of multiple layers of graphite sheets arranged in concentric cylinders, from two to many tens. These systems are closely related to graphite layers but in some features, MWCNTs behave quite differently from graphite. In particular, their ability to generate a photocurrent in a wide wavelength range has been demonstrated either without or with the application of a draining voltage. In addition, the photocurrent signal has been found to reproduce the optical absorbance of MWCNTs, showing a maximum in the near UV region. In this paper main characteristics of a novel large area photodetector featuring low noise, high linearity and efficiency are reported. This detector has been obtained by coupling the optoelectronic characteristics of MWCNTs with the well-known properties of silicon. MWCNTs are growth on n-doped silicon layer by chemical vapour deposition creating a p–n heterojunction with high sensitivity to the radiation from UV to IR. An additional MIS junction is obtained with a metallic conductive layer deposited on the back of silicon substrate. Moreover, first results on the signals generated by pulsed laser are also reported.

Hydrogen-terminated mesoporous silicon monoliths with huge surface area as alternative Si-based visible light-active photocatalysts

KAUST Repository

Li, Ting

2016-07-21

Silicon-based nanostructures and their related composites have drawn tremendous research interest in solar energy storage and conversion. Mesoporous silicon with a huge surface area of 400-900 m2 g-1 developed by electrochemical etching exhibits excellent photocatalytic ability and stability after 10 cycles in degrading methyl orange under visible light irradiation, owing to its unique mesoporous network, abundant surface hydrides and efficient light harvesting. This work showcases the profound effects of surface area, crystallinity, pore topology on charge migration/recombination and mass transportation. Therein the ordered 1D channel array has outperformed the interconnected 3D porous network by greatly accelerating the mass diffusion and enhancing the accessibility of the active sites on the extensive surfaces. © 2016 The Royal Society of Chemistry.

Erosion by pleistocene continental ice sheets in the area of the Canadian Shield

International Nuclear Information System (INIS)

Rutter, N.W.

The principles, theory and knowledge on the behaviour of glaciers indicate that only confined glacier flow is a major erosional agent. Unconfined, areally flowing ice sheets such as those present over the Canadian Shield during the Pleistocene Period modified the landscape very little. The potential for deep glacial erosion in future glaciations over the Canadian Shield area is low. Nuclear waste disposal sites, based only upon potential glacial erosion, should be located a few hundred meters below the surface in competent, fractureless crystalline shield bedrock, in relatively reliefless terrain, a few hundred kilometers away from the Paleozoic boundary. (auth)

Studying signal collection in the punch-through protection area of a silicon micro-strip sensor using a micro-focused X-ray beam

CERN Document Server

Poley, Anne-luise; The ATLAS collaboration

2018-01-01

For the Phase-II Upgrade of the ATLAS detector, a new, all-silicon tracker will be constructed in order to cope with the increased track density and radiation level of the High-Luminosity Large Hadron Collider. While silicon strip sensors are designed to minimise the fraction of dead material and maximise the active area of a sensor, concessions must be made to the requirements of operating a sensor in a particle physics detector. Sensor geometry features like the punch-through protection deviate from the standard sensor architecture and thereby affect the charge collection in that area. In order to study the signal collection of silicon strip sensors over their punch-through-protection area, ATLAS silicon strip sensors were scanned with a micro-focused X-ray beam at the Diamond Light Source. Due to the highly focused X-ray beam ($\\unit[2\\times3]{\\upmu\\text{m}}^2$) and the short average path length of an electron after interaction with an X-ray photon ($\\unit[\\leq2]{\\upmu\\text{m}}$), local signal collection i...

Recent progress in terrestrial photovoltaic collector technology

Science.gov (United States)

Ferber, R. R.

1982-01-01

The U.S. Photovoltaic Research and Development Program has the objective to develop the technology necessary to foster widespread grid-competitive electric power generation by the late 1980s. The flat-plate and the concentrator collector activities form the nucleus of the program. The project is concerned with the refining of silicon, silicon sheet production, solar cell processing and fabrication, encapsulation materials development, and collector design and production. The Large-Area Silicon Sheet Task has the objective to develop and demonstrate the feasibility of several methods for producing large area silicon sheet material suitable for fabricating low-cost, high-efficiency solar cells. It is expected that a variety of economic flat-plate and concentrator collectors will become commercially available for grid-connected applications.

Envisat-derived elevation changes of the Greenland ice sheet, and a comparison with ICESat results in the accumulation area

DEFF Research Database (Denmark)

Sørensen, Louise Sandberg; Simonsen, Sebastian Bjerregaard; Meister, Rakia

2015-01-01

We show, for the first time over the Greenland ice sheet, that an along track method for deriving rates of elevationchange can successfully be applied to Envisat radar altimetry data (2002–2010). The results provide improved resolution and coverage compared to previous results obtained from cross......-over methods. Also, we find that temporal changes in the elevation change rate can be derived from Envisat data, and show clearexamples of this by generating five-year running means for selected areas of the Greenland ice sheet. For a period between 2003 and 2009, the elevation of the ice sheetswas measured...

Large-area graphene films by simple solution casting of edge-selectively functionalized graphite.

Science.gov (United States)

Bae, Seo-Yoon; Jeon, In-Yup; Yang, Jieun; Park, Noejung; Shin, Hyeon Suk; Park, Sungjin; Ruoff, Rodney S; Dai, Liming; Baek, Jong-Beom

2011-06-28

We report edge-selective functionalization of graphite (EFG) for the production of large-area uniform graphene films by simply solution-casting EFG dispersions in dichloromethane on silicon oxide substrates, followed by annealing. The resultant graphene films show ambipolar transport properties with sheet resistances of 0.52-3.11 kΩ/sq at 63-90% optical transmittance. EFG allows solution processing methods for the scalable production of electrically conductive, optically transparent, and mechanically robust flexible graphene films for use in practice.

Large-area hexagonal silicon detectors for the CMS High Granularity Calorimeter

Science.gov (United States)

Pree, E.

2018-02-01

During the so-called Phase-2 Upgrade, the CMS experiment at CERN will undergo significant improvements to cope with the 10-fold luminosity increase of the High Luminosity LHC (HL-LHC) era. Especially the forward calorimetry will suffer from very high radiation levels and intensified pileup in the detectors. For this reason, the CMS collaboration is designing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. It features unprecedented transverse and longitudinal segmentation for both electromagnetic (CE-E) and hadronic (CE-H) compartments. The CE-E and a large fraction of CE-H will consist of a sandwich structure with silicon as active detector material. This paper presents an overview of the ongoing sensor development for the HGCAL and highlights important design features and measurement techniques. The design and layout of an 8-inch silicon sensor prototype is shown. The hexagonal sensors consist of 235 pads, each with an area of about 1 cm2. Furthermore, Synopsys TCAD simulations regarding the high voltage stability of the sensors for different geometric parameters are performed. Finally, two different IV characterisation methods are compared on the same sensor.

Anesthesia Fact Sheet

Science.gov (United States)

... Education About NIGMS NIGMS Home > Science Education > Anesthesia Anesthesia Tagline (Optional) Middle/Main Content Area En español ... Version (464 KB) Other Fact Sheets What is anesthesia? Anesthesia is a medical treatment that prevents patients ...

Effects of the Formulations of Silicon-Based Composite Anodes on their Mechanical, Storage, and Electrochemical Properties.

Science.gov (United States)

Assresahegn, Birhanu Desalegn; Bélanger, Daniel

2017-10-23

In this work, the effects of the formulation of silicon-based composite anodes on their mechanical, storage, and electrochemical properties were investigated. The electrode formulation was changed through the use of hydrogenated or modified (through the covalent attachment of a binding additive such as polyacrylic acid) silicon and acetylene black or graphene sheets as conducting additives. A composite anode with a covalently grafted binder had the highest elongation without breakages and strong adhesion to the current collector. These mechanical properties depend significantly on the conductive carbon additive used and the use of graphene sheets instead of acetylene black can improve elongation and adhesion significantly. After 180 days of storage under ambient conditions, the electronic conductivity and discharge capacity of the modified silicon electrode showed much smaller decreases in these properties than those of the hydrogenated silicon composite electrode, indicating that the modification can result in passivation and a constant composition of the active material. Moreover, the composite Si anode has a high packing density. Consequently, thin-film electrodes with very high material loadings can be prepared without decreased electrochemical performance. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical absorption in silicon layers in the presence of charge inversion/accumulation or ion implantation

International Nuclear Information System (INIS)

Alloatti, L.; Lauermann, M.; Koos, C.; Freude, W.; Sürgers, C.; Leuthold, J.

2013-01-01

We determine the optical losses in gate-induced charge accumulation/inversion layers at a Si/SiO 2 interface. Comparison between gate-induced charge layers and ion-implanted thin silicon films having an identical sheet resistance shows that optical losses can be significantly lower for gate-induced layers. For a given sheet resistance, holes produce higher optical loss than electrons. Measurements have been performed at λ = 1550 nm

Application of CBD-Zinc Sulfide Film as an Antireflection Coating on Very Large Area Multicrystalline Silicon Solar Cell

OpenAIRE

U. Gangopadhyay; K. Kim; S. K. Dhungel; H. Saha; J. Yi

2007-01-01

The low-cost chemical bath deposition (CBD) technique is used to prepare CBD-ZnS films as antireflective (AR) coating for multicrystalline silicon solar cells. The uniformity of CBD-ZnS film on large area of textured multicrystalline silicon surface is the major challenge of CBD technique. In the present work, attempts have been made for the first time to improve the rate of deposition and uniformity of deposited film by controlling film stoichiometry and refractive index and also to minimize...

Optimization of Performance Parameters for Large Area Silicon Photomultipliers

Science.gov (United States)

Janzen, Kathryn

2008-10-01

The goal of the GlueX experiment is to search for exotic hybrid mesons as evidence of gluonic excitations in an effort to better understand confinement. A key component of the GlueX detector is the electromagnetic barrel calorimeter (BCAL) located immediately inside a superconducting solenoid of approximately 2.5T. Because of this arrangement, traditional vacuum photomultiplier tubes (PMTs) which are affected significantly by magnetic fields cannot be used on the BCAL. The use of Silicon photomultipliers (SiPMs) as front-end detectors has been proposed. While the largest SiPMs that have been previously employed by other experiments are 1x1 mm^2, GlueX proposes to use large area SiPMs each composed of 16 - 3x3 mm^2 cells in a 4x4 array. This puts the GlueX collaboration in the unique position of driving the technology for larger area sensors. In this talk I will discuss tests done in Regina regarding performance parameters of prototype SiPM arrays delivered by SensL, a photonics research and development company based in Ireland, as well as sample 1x1 mm^2 and 3x3 mm^2 SiPMs.

Laser process for extended silicon thin film solar cells

International Nuclear Information System (INIS)

Hessmann, M.T.; Kunz, T.; Burkert, I.; Gawehns, N.; Schaefer, L.; Frick, T.; Schmidt, M.; Meidel, B.; Auer, R.; Brabec, C.J.

2011-01-01

We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca, E-mail: f.iacopi@griffith.edu.au [Environmental Futures Research Institute, Griffith University, Nathan 4111 (Australia); Wood, Barry [Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia 4072 (Australia)

2016-05-02

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm{sup −2} with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

All-solid-state supercapacitors on silicon using graphene from silicon carbide

International Nuclear Information System (INIS)

Wang, Bei; Ahmed, Mohsin; Iacopi, Francesca; Wood, Barry

2016-01-01

Carbon-based supercapacitors are lightweight devices with high energy storage performance, allowing for faster charge-discharge rates than batteries. Here, we present an example of all-solid-state supercapacitors on silicon for on-chip applications, paving the way towards energy supply systems embedded in miniaturized electronics with fast access and high safety of operation. We present a nickel-assisted graphitization method from epitaxial silicon carbide on a silicon substrate to demonstrate graphene as a binder-free electrode material for all-solid-state supercapacitors. We obtain graphene electrodes with a strongly enhanced surface area, assisted by the irregular intrusion of nickel into the carbide layer, delivering a typical double-layer capacitance behavior with a specific area capacitance of up to 174 μF cm"−"2 with about 88% capacitance retention over 10 000 cycles. The fabrication technique illustrated in this work provides a strategic approach to fabricate micro-scale energy storage devices compatible with silicon electronics and offering ultimate miniaturization capabilities.

Silicon solar cells made by ion implantation and glow discharge

International Nuclear Information System (INIS)

Ponpon, J.P.; Siffert, P.

1975-01-01

Three different methods of silicon solar cell preparation are considered and investigated: low energy implantation, glow discharge and prebombarded Schottky barriers. The properties of the contact layers realized by these processes are compared in terms of junction depth and sheet resistance. Preliminary results show the usefulness of these techniques for terrestrial solar cell realization [fr

Mammography with and without radiolucent positioning sheets : Comparison of projected breast area, pain experience, radiation dose and technical image quality

NARCIS (Netherlands)

Timmers, Janine; ten Voorde, Marloes; van Engen, Ruben E.; van Landsveld-Verhoeven, Cary; Pijnappel, Ruud; Droogh-de Greve, Kitty; den Heeten, Gerard J.; Broeders, Mireille J. M.

2015-01-01

Purpose: To compare projected breast area, image quality, pain experience and radiation dose between mammography performed with and without radiolucent positioning sheets. Methods: 184 women screened in the Dutch breast screening programme (May-June 2012) provided written informed consent to have

AI applications in sheet metal forming

CERN Document Server

Hussein, Hussein

2017-01-01

This book comprises chapters on research work done around the globe in the area of artificial intelligence (AI) applications in sheet metal forming. The first chapter offers an introduction to various AI techniques and sheet metal forming, while subsequent chapters describe traditional procedures/methods used in various sheet metal forming processes, and focus on the automation of those processes by means of AI techniques, such as KBS, ANN, GA, CBR, etc. Feature recognition and the manufacturability assessment of sheet metal parts, process planning, strip-layout design, selecting the type and size of die components, die modeling, and predicting die life are some of the most important aspects of sheet metal work. Traditionally, these activities are highly experience-based, tedious and time consuming. In response, researchers in several countries have applied various AI techniques to automate these activities, which are covered in this book. This book will be useful for engineers working in sheet metal industri...

Coupling of climate models and ice sheet models by surface mass balance gradients: application to the Greenland Ice Sheet

Directory of Open Access Journals (Sweden)

M. M. Helsen

2012-03-01

Full Text Available It is notoriously difficult to couple surface mass balance (SMB results from climate models to the changing geometry of an ice sheet model. This problem is traditionally avoided by using only accumulation from a climate model, and parameterizing the meltwater run-off as a function of temperature, which is often related to surface elevation (H_s. In this study, we propose a new strategy to calculate SMB, to allow a direct adjustment of SMB to a change in ice sheet topography and/or a change in climate forcing. This method is based on elevational gradients in the SMB field as computed by a regional climate model. Separate linear relations are derived for ablation and accumulation, using pairs of H_s and SMB within a minimum search radius. The continuously adjusting SMB forcing is consistent with climate model forcing fields, also for initially non-glaciated areas in the peripheral areas of an ice sheet. When applied to an asynchronous coupled ice sheet – climate model setup, this method circumvents traditional temperature lapse rate assumptions. Here we apply it to the Greenland Ice Sheet (GrIS. Experiments using both steady-state forcing and glacial-interglacial forcing result in realistic ice sheet reconstructions.

Mammography with and without radiolucent positioning sheets: Comparison of projected breast area, pain experience, radiation dose and technical image quality

NARCIS (Netherlands)

Timmers, Janine; ten Voorde, Marloes; van Engen, Ruben E.; van Landsveld-Verhoeven, Cary; Pijnappel, Ruud; Droogh-de Greve, Kitty; den Heeten, Gerard J.; Broeders, Mireille J. M.

2015-01-01

To compare projected breast area, image quality, pain experience and radiation dose between mammography performed with and without radiolucent positioning sheets. 184 women screened in the Dutch breast screening programme (May-June 2012) provided written informed consent to have one additional image

Laboratory and test beam results from a large-area silicon drift detector

CERN Document Server

Bonvicini, V; Giubellino, P; Gregorio, A; Idzik, M; Kolojvari, A A; Montaño-Zetina, L M; Nouais, D; Petta, C; Rashevsky, A; Randazzo, N; Reito, S; Tosello, F; Vacchi, A; Vinogradov, L I; Zampa, N

2000-01-01

A very large-area (6.75*8 cm/sup 2/) silicon drift detector with integrated high-voltage divider has been designed, produced and fully characterised in the laboratory by means of ad hoc designed MOS injection electrodes. The detector is of the "butterfly" type, the sensitive area being subdivided into two regions with a maximum drift length of 3.3 cm. The device was also tested in a pion beam (at the CERN PS) tagged by means of a microstrip detector telescope. Bipolar VLSI front-end cells featuring a noise of 250 e/sup -/ RMS at 0 pF with a slope of 40 e/sup -//pF have been used to read out the signals. The detector showed an excellent stability and featured the expected characteristics. Some preliminary results will be presented. (12 refs).

Experimental investigation of the degree of weakening in structural notch area of 7075-T6 aluminum alloy sheet welded with the RFSSW method

Directory of Open Access Journals (Sweden)

Kubit Andrzej

2017-01-01

Full Text Available The paper presents the methodology of the research determining the degree of weakening of the welded sheet obtained by the refill friction stir spot welding (RFSSW method. The considered weakness is the effect of a structural notch resulting from penetration by the tool. RFSSW technology is a relatively new method of joining metals, which can successfully provide an alternative to resistance welding or riveting - traditionally used methods of joining thin-walled structures in the aerospace and automotive industries. The study presented in the paper focuses on the overlapping of sheet metal with 7075-T6 aluminum alloy combined in the configuration: 1.6 mm top sheet and 0.8 mm bottom sheet. Joints were assembled following the following process parameters: Welding time 1.5 s, the tool plunge depth in the range of 1.5 ÷ 1.9 mm, and the spindle speed of 2600 rpm. The analysis of the microstructure of joints revealed that along the edge of the tool path a structural notch is formed, the size and shape of which depend on the parameters applied. The paper describes the study consisting in punching the welded area along the formed notch in the upper sheet. The punching process was performed on a universal testing machine and the punching force was measured during the test. Based on the force value, the degree of sheet weakening in the notched area was determined. The smallest weakening was observed in joints made with the smallest tool depth, i.e. 1.5 mm, whereas the biggest weakening was obtained for tool depth of 1.9 mm. The load applied to the joints was equal to 5290N and 7585N respectively.

Silver powder effectiveness and mechanism of silver paste on silicon solar cells

International Nuclear Information System (INIS)

Tsai, Jung-Ting; Lin, Shun-Tian

2013-01-01

Highlights: ► Optimizing the silver paste in 80–85 wt.%. ► Optimizing its particle size in 1–1.5 μm spherical powder. ► The sheet resistance is 4 mΩ/sq during the 860 °C sintering process. ► Redox reaction cause Ag crystallites to grow on the interface. ► A thin layer of silicon oxide (75–150 nm) was formed. - Abstract: Since the silver paste plays a major role in the mass production of silicon solar cells, this work has succeeded in optimizing the silver paste in 80–85 wt.% and optimizing its particle size in 1–1.5 μm spherical powder. As the firing temperature is increased, the growth trend of silver grain is improved. The result of this work has showed that the lowest sheet resistance is 4 mΩ/sq during the 860 °C sintering process. The scanning electron microscope (SEM) observation has showed that the formation of silver oxide is formed during the melting process of glass and triggered redox reaction of Ag crystallites to grow on the interface. It has proven by transmission electron microscope (TEM) that a thin layer of silicon oxide (75–150 nm) was formed, respectively.

Edgeless silicon sensors for Medipix-based large-area X-ray imaging detectors

International Nuclear Information System (INIS)

Bosma, M J; Visser, J; Koffeman, E N; Evrard, O; De Moor, P; De Munck, K; Tezcan, D Sabuncuoglu

2011-01-01

Some X-ray imaging applications demand sensitive areas exceeding the active area of a single sensor. This requires a seamless tessellation of multiple detector modules with edgeless sensors. Our research is aimed at minimising the insensitive periphery that isolates the active area from the edge. Reduction of the edge-defect induced charge injection, caused by the deleterious effects of dicing, is an important step. We report on the electrical characterisation of 300 μm thick edgeless silicon p + -ν-n + diodes, diced using deep reactive ion etching. Sensors with both n-type and p-type stop rings were fabricated in various edge topologies. Leakage currents in the active area are compared with those of sensors with a conventional design. As expected, we observe an inverse correlation between leakage-current density and both the edge distance and stop-ring width. From this correlation we determine a minimum acceptable edge distance of 50 μm. We also conclude that structures with a p-type stop ring show lower leakage currents and higher breakdown voltages than the ones with an n-type stop ring.

Piezoresistive pressure sensor using low-temperature aluminium induced crystallization of sputter-deposited amorphous silicon film

International Nuclear Information System (INIS)

Tiwari, Ruchi; Chandra, Sudhir

2013-01-01

In the present work, we have investigated the piezoresistive properties of silicon films prepared by the radio frequency magnetron sputtering technique, followed by the aluminium induced crystallization (AIC) process. Orientation and grain size of the polysilicon films were studied by x-ray diffraction analysis and found to be in the range 30–50 nm. Annealing of the Al–Si stack on an oxidized silicon substrate was performed in air ambient at 300–550 °C, resulting in layer exchange and transformation from amorphous to polysilicon phase. Van der Pauw and Hall measurement techniques were used to investigate the sheet resistance and carrier mobility of the resulting polycrystalline silicon film. The effect of Al thickness on the sheet resistance and mobility was also studied in the present work. A piezoresistive pressure sensor was fabricated on an oxidized silicon substrate in a Wheatstone bridge configuration, comprising of four piezoresistors made of polysilicon film obtained by the AIC process. The diaphragm was formed by the bulk-micromachining of silicon substrate. The response of the pressure sensor with applied negative pressure in 10–95 kPa range was studied. The gauge factor was estimated to be 5 and 18 for differently located piezoresistors on the diaphragm. The sensitivity of the pressure sensor was measured to be ∼ 30 mV MPa −1 , when the Wheatstone bridge was biased at 1 V input voltage. (paper)

Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

Energy Technology Data Exchange (ETDEWEB)

Riise, Heine Nygard, E-mail: h.n.riise@fys.uio.no; Azarov, Alexander; Svensson, Bengt G.; Monakhov, Edouard [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, N-0316 Oslo (Norway); Schumann, Thomas; Hübner, Renè; Skorupa, Wolfgang [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P. O. Box 510119, 01314 Dresden (Germany)

2015-07-13

Shallow, Boron (B)-doped p{sup +} emitters have been realized using spin-on deposition and Flash Lamp Annealing (FLA) to diffuse B into monocrystalline float zone Silicon (Si). The emitters extend between 50 and 140 nm in depth below the surface, have peak concentrations between 9 × 10{sup 19 }cm{sup –3} and 3 × 10{sup 20 }cm{sup –3}, and exhibit sheet resistances between 70 and 3000 Ω/□. An exceptionally large increase in B diffusion occurs for FLA energy densities exceeding ∼93 J/cm{sup 2} irrespective of 10 or 20 ms pulse duration. The effect is attributed to enhanced diffusion of B caused by Si interstitial injection following a thermally activated reaction between the spin-on diffusant film and the silicon wafer.

Safety advice sheets

CERN Multimedia

HSE Unit

2013-01-01

You never know when you might be faced with questions such as: when/how should I dispose of a gas canister? Where can I find an inspection report? How should I handle/store/dispose of a chemical substance…?   The SI section of the DGS/SEE Group is primarily responsible for safety inspections, evaluating the safety conditions of equipment items, premises and facilities. On top of this core task, it also regularly issues “Safety Advice Sheets” on various topics, designed to be of assistance to users but also to recall and reinforce safety rules and procedures. These clear and concise sheets, complete with illustrations, are easy to display in the appropriate areas. The following safety advice sheets have been issued so far: Other sheets will be published shortly. Suggestions are welcome and should be sent to the SI section of the DGS/SEE Group. Please send enquiries to general-safety-visits.service@cern.ch.

Structural Biology Fact Sheet

Science.gov (United States)

... NIGMS NIGMS Home > Science Education > Structural Biology Structural Biology Tagline (Optional) Middle/Main Content Area PDF Version (688 KB) Other Fact Sheets What is structural biology? Structural biology is the study of how biological ...

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto

2014-02-25

In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

Basic design of on-line analyzer for sheet paper using X-ray fluorescence (XRF) technique

International Nuclear Information System (INIS)

Rony Djokorayono; Ahmad Suntoro; Ikhsan Shobari; Usep Setia Gunawan

2016-01-01

Basic design of on-line analyzer for sheet paper using X-ray fluorescence technique has been carried out. Compared with sampling technique, this X-ray fluorescence technique has some advantages in term of analysis accuracy and time. The design activities performed including the establishment of design requirements, functional requirements, technical requirements, technical specification, detection sub-system design, data acquisition sub-system design, and operator computer console design. This program will use silicon drift or CdTe X-ray detector to detect X-ray fluorescence emitted by elements in sheet paper due to X-ray interaction of a X-ray source, 55 Fe (Ferro-55).This basic design of on-line analyzer for sheet paper using X-ray fluorescence technique should be followed up with the development of detailed design, prototype construction, and field testing. (author)

New directions in the science and technology of advanced sheet explosive formulations and the key energetic materials used in the processing of sheet explosives: Emerging trends.

Science.gov (United States)

Talawar, M B; Jangid, S K; Nath, T; Sinha, R K; Asthana, S N

2015-12-30

This review presents the work carried out by the international community in the area of sheet explosive formulations and its applications in various systems. The sheet explosive is also named as PBXs and is a composite material in which solid explosive particles like RDX, HMX or PETN are dispersed in a polymeric matrix, forms a flexible material that can be rolled/cut into sheet form which can be applied to any complex contour. The designed sheet explosive must possess characteristic properties such as flexible, cuttable, water proof, easily initiable, and safe handling. The sheet explosives are being used for protecting tanks (ERA), light combat vehicle and futuristic infantry carrier vehicle from different attacking war heads etc. Besides, sheet explosives find wide applications in demolition of bridges, ships, cutting and metal cladding. This review also covers the aspects such as risks and hazard analysis during the processing of sheet explosive formulations, effect of ageing on sheet explosives, detection and analysis of sheet explosive ingredients and the R&D efforts of Indian researchers in the development of sheet explosive formulations. To the best of our knowledge, there has been no review article published in the literature in the area of sheet explosives. Copyright © 2015 Elsevier B.V. All rights reserved.

The annealing of phosphorus-implanted silicon investigated at low temperatures

International Nuclear Information System (INIS)

Wagner, C.; Burkhardt, F.

1978-01-01

Phosphorus ions are implanted at 50 keV into misaligned silicon crystals at 20 and 300 0 C, respectively. The ion doses used are 8 x 10 13 and 8 x 10 14 cm -2 , respectively. After annealing treatments the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity in the range from 300 to 4.2 K. The experimental results indicate some problems which must be taken into account for interpreting Hall effect measurements made at room temperature only. Furthermore the results give some new information on the annealing process in phosphorus implanted silicon and the influence of the implantation parameters. (author)

Porous Silicon Nanowires

Science.gov (United States)

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Silicon etch process

International Nuclear Information System (INIS)

Day, D.J.; White, J.C.

1984-01-01

A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

Porous silicon gettering

Energy Technology Data Exchange (ETDEWEB)

Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

1996-05-01

The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

Nanopillars: Large Area Fabrication of Leaning Silicon Nanopillars for Surface Enhanced Raman Spectroscopy (Adv. Mater. 10/2012)

DEFF Research Database (Denmark)

Schmidt, Michael Stenbæk; Hübner, Jörg; Boisen, Anja

2012-01-01

M. S. Schmidt et al. describe on page OP11 a simple, two-step fabrication process to as-semble flexible, freestanding nanopillars into large-area substrates. These substrates can be made using readily available silicon-processing equipment and are suitable for SERS, having a large, uniform Raman ...

Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

Science.gov (United States)

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

2014-03-01

The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

Hanford Site Treated Effluent Disposal Facility process flow sheet

International Nuclear Information System (INIS)

Bendixsen, R.B.

1993-04-01

This report presents a novel method of using precipitation, destruction and recycle factors to prepare a process flow sheet. The 300 Area Treated Effluent Disposal Facility (TEDF) will treat process sewer waste water from the 300 Area of the Hanford Site, located near Richland, Washington, and discharge a permittable effluent flow into the Columbia River. When completed and operating, the TEDF effluent water flow will meet or exceed water quality standards for the 300 Area process sewer effluents. A preliminary safety analysis document (PSAD), a preconstruction requirement, needed a process flow sheet detailing the concentrations of radionuclides, inorganics and organics throughout the process, including the effluents, and providing estimates of stream flow quantities, activities, composition, and properties (i.e. temperature, pressure, specific gravity, pH and heat transfer rates). As the facility begins to operate, data from process samples can be used to provide better estimates of the factors, the factors can be entered into the flow sheet and the flow sheet will estimate more accurate steady state concentrations for the components. This report shows how the factors were developed and how they were used in developing a flow sheet to estimate component concentrations for the process flows. The report concludes with how TEDF sample data can improve the ability of the flow sheet to accurately predict concentrations of components in the process

Hypsometric amplification and routing moderation of Greenland ice sheet meltwater release

Science.gov (United States)

van As, Dirk; Mikkelsen, Andreas Bech; Holtegaard Nielsen, Morten; Box, Jason E.; Claesson Liljedahl, Lillemor; Lindbäck, Katrin; Pitcher, Lincoln; Hasholt, Bent

2017-06-01

Concurrent ice sheet surface runoff and proglacial discharge monitoring are essential for understanding Greenland ice sheet meltwater release. We use an updated, well-constrained river discharge time series from the Watson River in southwest Greenland, with an accurate, observation-based ice sheet surface mass balance model of the ˜ 12 000 km2 ice sheet area feeding the river. For the 2006-2015 decade, we find a large range of a factor of 3 in interannual variability in discharge. The amount of discharge is amplified ˜ 56 % by the ice sheet's hypsometry, i.e., area increase with elevation. A good match between river discharge and ice sheet surface meltwater production is found after introducing elevation-dependent transit delays that moderate diurnal variability in meltwater release by a factor of 10-20. The routing lag time increases with ice sheet elevation and attains values in excess of 1 week for the upper reaches of the runoff area at ˜ 1800 m above sea level. These multi-day routing delays ensure that the highest proglacial discharge levels and thus overbank flooding events are more likely to occur after multi-day melt episodes. Finally, for the Watson River ice sheet catchment, we find no evidence of meltwater storage in or release from the en- and subglacial environments in quantities exceeding our methodological uncertainty, based on the good match between ice sheet runoff and proglacial discharge.

Unequal ice-sheet erosional impacts across low-relief shield terrain in northern Fennoscandia

Science.gov (United States)

Ebert, Karin; Hall, Adrian M.; Kleman, Johan; Andersson, Jannike

2015-03-01

Much previous work on Late Cenozoic glacial erosion patterns in bedrock has focussed on mountain areas. Here we identify varying impacts of ice sheet erosion on the low-relief bedrock surface of the Fennoscandian shield, and examine the geological, topographical and glaciological controls on these patterns. We combine GIS-mapping of topographical, hydrological and weathering data with field observations. We identify and investigate areas with similar geology and general low relief that show different degrees of ice sheet erosional impact, despite similar ice cover histories. On two transects with a total area of ~ 84 000 km2 across the northern Fennoscandian shield, we first establish patterns of glacial erosion and then examine why glacially streamlined areas exist adjacent to areas of negligible glacial erosion. The northern transect includes two areas of exceptional glacial preservation, the Parkajoki area in Sweden and the so-called ice divide zone in Finland, each of which preserve tors and deep saprolite covers. The southern transect, overlapping in the northern part with the first transect, includes areas of well developed glacial streamlining, with bedrock areas stripped of loose material and barely any weathering remnants. For both areas, we firstly present contrasting indicators for ice sheet erosional impact: streamlined and non-streamlined inselbergs; parallel and dendritic/rectangular drainage patterns; and the absence and presence of Neogene weathering remnants. This is followed by an investigation of factors that possibly influence ice sheet erosional impact: ice cover history, ice cover duration and thickness, bedrock type and structure, and topography. We find that the erosional impact of the Fennoscandian ice sheet has varied across the study area. Distinct zones of ice sheet erosion are identified in which indicators of either low or high erosion coexist in the same parts of the transects. No direct impact of rock type on glacial erosion patterns

Self-assembling peptide hydrogels immobilized on silicon surfaces

International Nuclear Information System (INIS)

Franchi, Stefano; Battocchio, Chiara; Galluzzi, Martina; Navisse, Emanuele; Zamuner, Annj; Dettin, Monica; Iucci, Giovanna

2016-01-01

The hydrogels of self-assembling ionic complementary peptides have collected in the scientific community increasing consensus as mimetics of the extracellular matrix that can offer 3D supports for cell growth or be vehicles for the delivery of stem cells or drugs. Such scaffolds have also been proposed as bone substitutes for small defects as they promote beneficial effects on human osteoblasts. In this context, our research deals with the introduction of a layer of self-assembling peptides on a silicon surface by covalent anchoring and subsequent physisorption. In this work, we present a spectroscopic investigation of the proposed bioactive scaffolds, carried out by surface-sensitive spectroscopic techniques such as XPS (X-ray photoelectron spectroscopy) and RAIRS (Reflection Absorption Infrared Spectroscopy) and by state-of-the-art synchrotron radiation methodologies such as angle dependent NEXAFS (Near Edge X-ray Absorption Fine Structure). XPS studies confirmed the change in the surface composition in agreement with the proposed enrichments, and led to assess the self-assembling peptide chemical stability. NEXAFS spectra, collected in angular dependent mode at the N K-edge, allowed to investigate the self-assembling behavior of the macromolecules, as well as to determine their molecular orientation on the substrate. Furthermore, Infrared Spectroscopy measurements demonstrated that the peptide maintains its secondary structure (β-sheet anti-parallel) after deposition on the silicon surface. The complementary information acquired by means of XPS, NEXAFS and RAIRS lead to hypothesize a “layer-by-layer” arrangement of the immobilized peptides, giving rise to an ordered 3D nanostructure. - Highlights: • A self-assembling peptide (SAP) was covalently immobilized of on a flat silicon surface. • A physisorbed SAP layer was grown on top of the covalently immobilized peptide layer. • Molecular order and orientation of the peptide overlayer on the flat silicon

Self-assembling peptide hydrogels immobilized on silicon surfaces

Energy Technology Data Exchange (ETDEWEB)

Franchi, Stefano; Battocchio, Chiara; Galluzzi, Martina; Navisse, Emanuele [Department of Sciences, University “Roma Tre”, Via della Vasca Navale 79, Roma, 00146 (Italy); Zamuner, Annj; Dettin, Monica [Department of Industrial Engineering, University of Padua, Via Marzolo, 9, Padua, 35131 (Italy); Iucci, Giovanna, E-mail: giovanna.iucci@uniroma3.it [Department of Sciences, University “Roma Tre”, Via della Vasca Navale 79, Roma, 00146 (Italy)

2016-12-01

The hydrogels of self-assembling ionic complementary peptides have collected in the scientific community increasing consensus as mimetics of the extracellular matrix that can offer 3D supports for cell growth or be vehicles for the delivery of stem cells or drugs. Such scaffolds have also been proposed as bone substitutes for small defects as they promote beneficial effects on human osteoblasts. In this context, our research deals with the introduction of a layer of self-assembling peptides on a silicon surface by covalent anchoring and subsequent physisorption. In this work, we present a spectroscopic investigation of the proposed bioactive scaffolds, carried out by surface-sensitive spectroscopic techniques such as XPS (X-ray photoelectron spectroscopy) and RAIRS (Reflection Absorption Infrared Spectroscopy) and by state-of-the-art synchrotron radiation methodologies such as angle dependent NEXAFS (Near Edge X-ray Absorption Fine Structure). XPS studies confirmed the change in the surface composition in agreement with the proposed enrichments, and led to assess the self-assembling peptide chemical stability. NEXAFS spectra, collected in angular dependent mode at the N K-edge, allowed to investigate the self-assembling behavior of the macromolecules, as well as to determine their molecular orientation on the substrate. Furthermore, Infrared Spectroscopy measurements demonstrated that the peptide maintains its secondary structure (β-sheet anti-parallel) after deposition on the silicon surface. The complementary information acquired by means of XPS, NEXAFS and RAIRS lead to hypothesize a “layer-by-layer” arrangement of the immobilized peptides, giving rise to an ordered 3D nanostructure. - Highlights: • A self-assembling peptide (SAP) was covalently immobilized of on a flat silicon surface. • A physisorbed SAP layer was grown on top of the covalently immobilized peptide layer. • Molecular order and orientation of the peptide overlayer on the flat silicon

Hypsometric amplification and routing moderation of Greenland ice sheet meltwater release

Directory of Open Access Journals (Sweden)

D. van As

2017-06-01

Full Text Available Concurrent ice sheet surface runoff and proglacial discharge monitoring are essential for understanding Greenland ice sheet meltwater release. We use an updated, well-constrained river discharge time series from the Watson River in southwest Greenland, with an accurate, observation-based ice sheet surface mass balance model of the  ∼  12 000 km2 ice sheet area feeding the river. For the 2006–2015 decade, we find a large range of a factor of 3 in interannual variability in discharge. The amount of discharge is amplified  ∼  56 % by the ice sheet's hypsometry, i.e., area increase with elevation. A good match between river discharge and ice sheet surface meltwater production is found after introducing elevation-dependent transit delays that moderate diurnal variability in meltwater release by a factor of 10–20. The routing lag time increases with ice sheet elevation and attains values in excess of 1 week for the upper reaches of the runoff area at  ∼  1800 m above sea level. These multi-day routing delays ensure that the highest proglacial discharge levels and thus overbank flooding events are more likely to occur after multi-day melt episodes. Finally, for the Watson River ice sheet catchment, we find no evidence of meltwater storage in or release from the en- and subglacial environments in quantities exceeding our methodological uncertainty, based on the good match between ice sheet runoff and proglacial discharge.

Aerial radiometric and magnetic survey; Brushy Basin detail survey: Price/Salina national topographic map sheets, Utah. Volume IV. Area III: graphic data. Final report

International Nuclear Information System (INIS)

1981-01-01

This volume contains all the graphic data for Area III, which includes lines 3420 to 5320 and tie lines 6080, 6100, and 6140. Due to the large map scale of the data presented (1:62,500), this area was further subdivided into eleven 7-1/2 min quadrant sheets

Electrical and electron microscopy observations on defects in ion implanted silicon

International Nuclear Information System (INIS)

Ling, H.

1978-01-01

Silicon single crystals were implanted with 100 keV phosphorus ions to a dose of 2 x 10 16 ions/cm 2 at both room-temperature and 600 0 C. They were isochronally annealed at temperatures ranging from 400 0 C to 900 0 C. Sheet resistivity measurements of the specimens were taken after each anneal, together with corresponding transmission electron micrographs

Preparation and characterization of tempered tungsten layers on single crystalline silicon

International Nuclear Information System (INIS)

Nitzsche, K.; Knedlik, C.; Tippmann, H.; Spiess, L.; Harman, R.; Vanek, O.; Tvarozek, V.

1984-01-01

Tungsten layers have been deposited on single crystalline silicon by sputtering and characterized by measurements of the sheet resistance by a linear four point method and the van der Pauw method. The influence of tempering under argon on the resistance has been studied. By means of the RBS spectroscopy it was found that the increase in the specific resistance is caused by interdiffusion

Silicon based light-emitting materials and devices

International Nuclear Information System (INIS)

Chen Weide

1999-01-01

Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

Magneto-hydrodynamics of coupled fluid–sheet interface with mass suction and blowing

International Nuclear Information System (INIS)

Ahmad, R.

2016-01-01

There are large number of studies which prescribe the kinematics of the sheet and ignore the sheet's mechanics. However, the current boundary layer analysis investigates the mechanics of both the electrically conducting fluid and a permeable sheet, which makes it distinct from the other studies in the literature. One of the objectives of the current study is to (i) examine the behaviour of magnetic field effect for both the surface and the electrically conducting fluid (ii) investigate the heat and mass transfer between a permeable sheet and the surrounding electrically conducting fluid across the hydro, thermal and mass boundary layers. Self-similar solutions are obtained by considering the RK45 technique. Analytical solution is also found for the stretching sheet case. The skin friction dual solutions are presented for various types of sheet. The influence of pertinent parameters on the dimensionless velocity, shear stress, temperature, mass concentration, heat and mass transfer rates on the fluid–sheet interface is presented graphically as well as numerically. The obtained results are of potential benefit for studying the electrically conducting flow over various soft surfaces such as synthetic plastics, soft silicone sheet and soft synthetic rubber sheet. These surfaces are easily deformed by thermal fluctuations or thermal stresses. - Highlights: • The momentum equation is modelled for both the surrounding MHD fluid and the sheet with the effects of mass suction and blowing. • The current study further investigates the heat and mass transfer characteristics between a permeable sheet and the surrounding electrically conducting fluid across the thermal and mass boundary layers. • Both the approximated and analytical techniques have been included for the purpose of comparison, and the perfect numerical agreements have been established with the previous studies. • Dual solutions for the skin friction coefficients are found for various categories of

Heteroatom Polymer-Derived 3D High-Surface-Area and Mesoporous Graphene Sheet-Like Carbon for Supercapacitors.

Science.gov (United States)

Sheng, Haiyang; Wei, Min; D'Aloia, Alyssa; Wu, Gang

2016-11-09

Current supercapacitors suffer from low energy density mainly due to the high degree of microporosity and insufficient hydrophilicity of their carbon electrodes. Development of a supercapacitor capable of simultaneously storing as much energy as a battery, along with providing sufficient power and long cycle stability would be valued for energy storage applications and innovations. Differing from commonly studied reduced graphene oxides, in this work we identified an inexpensive heteroatom polymer (polyaniline-PANI) as a carbon/nitrogen precursor, and applied a controlled thermal treatment at elevated temperature to convert PANI into 3D high-surface-area graphene-sheet-like carbon materials. During the carbonization process, various transition metals including Fe, Co, and Ni were added, which play critical roles in both catalyzing the graphitization and serving as pore forming agents. Factors including post-treatments, heating temperatures, and types of metal were found crucial for achieving enhanced capacitance performance on resulting carbon materials. Using FeCl 3 as precursor along with optimal heating temperature 1000 °C and mixed acid treatment (HCl+HNO 3 ), the highest Brunauer-Emmett-Teller (BET) surface area of 1645 m 2 g -1 was achieved on the mesopore dominant graphene-sheet-like carbon materials. The unique morphologies featured with high-surface areas, dominant mesopores, proper nitrogen doping, and 3D graphene-like structures correspond to remarkably enhanced electrochemical specific capacitance up to 478 Fg -1 in 1.0 M KOH at a scan rate of 5 mV s -1 . Furthermore, in a real two-electrode system of a symmetric supercapacitor, a specific capacitance of 235 Fg -1 using Nafion binder is obtained under a current density of 1 Ag -1 by galvanostatic charge-discharge tests in 6.0 M KOH. Long-term cycle stability up to 5000 cycles by using PVDF binder in electrode was systematically evaluated as a function of types of metals and current densities.

Modelling of aluminium sheet forming at elevated temperatures

NARCIS (Netherlands)

van den Boogaard, Antonius H.; Huetink, Han

2004-01-01

The formability of Al–Mg sheet can be improved considerably, by increasing the temperature. By heating the sheet in areas with large shear strains, but cooling it on places where the risk of necking is high, the limiting drawing ratio can be increased to values above 2.5. At elevated temperatures,

Continuous Czochralski Growth. Silicon Sheet Growth Development of the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project

Science.gov (United States)

Merz, F.

1979-01-01

During the reporting period, a successful 100 kilogram run was performed. Six ingots of 13 cm diameter were grown, ranging in size from 15.5 kg to 17.7 kg. Melt replenishment methods included both poly rod and lump feed material. Samples from each ingot were prepared for solar cell fabrication and analyses, impurity analysis, and structural studies. The furnace was converted to the 14-inch hot zone and preliminary heat runs were performed. Two sucessful runs were demonstrated, by growing 25 kg ingots from 30 kg melts. Also, a 100 kg run was attempted, utilizing the 14 inch crucible hot zone, but was prematurely terminated due to excessive monoxide which accumulated on the viewports and a seed failure.

Continuous Czochralski growth: Silicon sheet growth development of the large area silicon sheet task of the Low Cost Silicon Solar Array project

Science.gov (United States)

1978-01-01

The primary objective of this contract is to develop equipment and methods for the economic production of single crystal ingot material by the continuous Czochralski (CZ) process. Continuous CZ is defined for the purpose of this work as the growth of at least 100 kilograms of ingot from only one melt container. During the reporting period (October, 1977 - September, 1978), a modified grower was made fully functional and several recharge runs were performed. The largest run lasted 44 hours and over 42 kg of ingot was produced. Little, if any, degradation in efficiency was observed as a result of pulling multiple crystals from one crucible. Solar efficiencies observed were between 9.3 and 10.4% AMO (13.0 and 14.6% AMI) compared to 10.5% (14.7% AMI) for optimum CZ material control samples. Using the SAMICS/IPEG format, economic analysis of continuous CZ suggests that 1986 DoE cost goals can only be met by the growth of large diameter, large mass crystals.

Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

Science.gov (United States)

Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

2014-10-28

Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

Science.gov (United States)

Zoutendyk, J. A.

1976-01-01

Because of the growing need for new sources of electrical energy, photovoltaic solar energy conversion is being developed. Photovoltaic devices are now being produced mainly from silicon wafers obtained from the slicing and polishing of cylindrically shaped single crystal ingots. Inherently high-cost processes now being used must either be eliminated or modified to provide low-cost crystalline silicon. Basic to this pursuit is the development of new or modified methods of crystal growth and, if necessary, crystal cutting. If silicon could be grown in a form requiring no cutting, a significant cost saving would potentially be realized. Therefore, several techniques for growth in the form of ribbons or sheets are being explored. In addition, novel techniques for low-cost ingot growth and cutting are under investigation.

The use of silicone occlusive sheeting (Sil-K) and silicone occlusive gel (epiderm) in the prevention of hypertrophic scar formation

NARCIS (Netherlands)

Niessen, FB; Spauwen, PHM; Robinson, PH; Fidler, [No Value; Kon, M

The development of hypertrophic scars and keloids is an unsolved problem in the process of found healing. For this reason, a successful treatment to prevent excessive scar formation still has not been found. Over the last decade, however, a promising new treatment has been introduced. Silicone

Light-Weight Free-Standing Carbon Nanotube-Silicon Films for Anodes of Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng; Hu, Liangbing; Choi, Jang Wook; Cui, Yi

2010-01-01

and Si as a high capacity anode material for Li-ion battery. Such free-standing film has a low sheet resistance of ∼30 Ohm/sq. It shows a high specific charge storage capacity (∼2000 mAh/g) and a good cycling life, superior to pure sputtered-on silicon

Silicon nanowire-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

2008-07-23

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

Silicon nanowire-based solar cells

International Nuclear Information System (INIS)

Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

2008-01-01

The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

Silicon photonics for telecommunications and biomedicine

CERN Document Server

Fathpour, Sasan

2011-01-01

Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

Mechanics of silicon nitride thin-film stressors on a transistor-like geometry

Directory of Open Access Journals (Sweden)

S. Reboh

2013-10-01

Full Text Available To understand the behavior of silicon nitride capping etch stopping layer stressors in nanoscale microelectronics devices, a simplified structure mimicking typical transistor geometries was studied. Elastic strains in the silicon substrate were mapped using dark-field electron holography. The results were interpreted with the aid of finite element method modeling. We show, in a counterintuitive sense, that the stresses developed by the film in the vertical sections around the transistor gate can reach much higher values than the full sheet reference. This is an important insight for advanced technology nodes where the vertical contribution of such liners is predominant over the horizontal part.

Process Simulation and Characterization of Substrate Engineered Silicon Thin Film Transistor for Display Sensors and Large Area Electronics

International Nuclear Information System (INIS)

Hashmi, S M; Ahmed, S

2013-01-01

Design, simulation, fabrication and post-process qualification of substrate-engineered Thin Film Transistors (TFTs) are carried out to suggest an alternate manufacturing process step focused on display sensors and large area electronics applications. Damage created by ion implantation of Helium and Silicon ions into single-crystalline n-type silicon substrate provides an alternate route to create an amorphized region responsible for the fabrication of TFT structures with controllable and application-specific output parameters. The post-process qualification of starting material and full-cycle devices using Rutherford Backscattering Spectrometry (RBS) and Proton or Particle induced X-ray Emission (PIXE) techniques also provide an insight to optimize the process protocols as well as their applicability in the manufacturing cycle

Silicon Micromachines for Science and Technology

International Nuclear Information System (INIS)

Bishop, David J.

2002-01-01

The era of silicon micromechanics is upon us. In areas as diverse as telecommunications, automotive, aerospace, chemistry, entertainment and basic science, the ability to build microscopic machines from silicon is having a revolutionary impact. In my talk, I will discuss what micromachines are, how they are built and show examples of how they will have a revolutionary impact in many areas of science as well as technology.

Light-Weight Free-Standing Carbon Nanotube-Silicon Films for Anodes of Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng

2010-07-27

Silicon is an attractive alloy-type anode material because of its highest known capacity (4200 mAh/g). However, lithium insertion into and extraction from silicon are accompanied by a huge volume change, up to 300%, which induces a strong strain on silicon and causes pulverization and rapid capacity fading due to the loss of the electrical contact between part of silicon and current collector. Si nanostructures such as nanowires, which are chemically and electrically bonded to the current collector, can overcome the pulverization problem, however, the heavy metal current collectors in these systems are larger in weight than Si active material. Herein we report a novel anode structure free of heavy metal current collectors by integrating a flexible, conductive carbon nanotube (CNT) network into a Si anode. The composite film is free-standing and has a structure similar to the steel bar reinforced concrete, where the infiltrated CNT network functions as both mechanical support and electrical conductor and Si as a high capacity anode material for Li-ion battery. Such free-standing film has a low sheet resistance of ∼30 Ohm/sq. It shows a high specific charge storage capacity (∼2000 mAh/g) and a good cycling life, superior to pure sputtered-on silicon films with similar thicknesses. Scanning electron micrographs show that Si is still connected by the CNT network even when small breaking or cracks appear in the film after cycling. The film can also "ripple up" to release the strain of a large volume change during lithium intercalation. The conductive composite film can function as both anode active material and current collector. It offers ∼10 times improvement in specific capacity compared with widely used graphite/copper anode sheets. © 2010 American Chemical Society.

Porous silicon carbide (SIC) semiconductor device

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of low-cost large-area module manufacturing technologies, and development of technologies to manufacture amorphous silicon/thin film poly-crystalline silicon hybrid thin film solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (tei cost daimenseki module seizo kaihatsu (oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon / usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu))

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

Developmental research has been performed on large-area low-cost manufacturing technologies on hybrid thin film solar cells of amorphous silicon and poly-crystalline silicon. This paper summarizes the achievements in fiscal 1999. The research has been performed on a texture construction formed naturally on silicon surface, and thin film poly-crystalline silicon cells with STAR structure having a rear side reflection layer to increase light absorption. The research achievements during the current fiscal year may be summarized as follows: the laser scribing technology for thin film poly-crystalline silicon was established, which is important for modularization, making fabrication of low-cost and large-area modules possible; a stabilization efficiency of 11.3% was achieved in a hybrid mini module comprising of ten-stage series integrated amorphous silicon and thin film poly-crystalline silicon; structures different hybrid modules were discussed, whereas an initial efficiency of 10.3% (38.78W) was achieved in a sub-module having a substrate size of 910 mm times 455 mm; and feasibility of forming large-area hybrid modules was demonstrated. (NEDO)

Synthesis of silicon nanocomposite for printable photovoltaic devices on flexible substrate

Science.gov (United States)

Odo, E. A.; Faremi, A. A.

2017-06-01

Renewed interest has been established in the preparation of silicon nanoparticles for electronic device applications. In this work, we report on the production of silicon powders using a simple ball mill and of silicon nanocomposite ink for screen-printable photovoltaic device on a flexible substrate. Bulk single crystalline silicon was milled for 25 h in the ball mill. The structural properties of the produced silicon nanoparticles were investigated using X-ray diffraction (XRD) and transmission electron microscopy. The results show that the particles remained highly crystalline, though transformed from their original single crystalline state to polycrystalline. The elemental composition using energy dispersive X-ray florescence spectroscopy (EDXRF) revealed that contamination from iron (Fe) and chromium (Cr) of the milling media and oxygen from the atmosphere were insignificant. The size distribution of the nanoparticles follows a lognormal pattern that ranges from 60 nm to about 1.2 μm and a mean particle size of about 103 nm. Electrical characterization of screen-printed PN structures of the nanocomposite formed by embedding the powder into a suitable water-soluble polymer on Kapton sheet reveals an enhanced photocurrent transport resulting from photo-induced carrier generation in the depletion region with energy greater that the Schottky barrier height at the metal-composite interface.

Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

Energy Technology Data Exchange (ETDEWEB)

Villalpando, I. [Centro de Investigacion de los Recursos Naturales, Antigua Normal Rural, Salaices, Lopez, Chihuahua (Mexico); John, P.; Wilson, J. I. B., E-mail: isaelav@hotmail.com [School of Engineering and Physical Sciences, Heriot-Watt University, Riccarton, Edinburgh, EH14-4AS (United Kingdom)

2017-11-01

The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

Growth of carbon fibres, sheets and tubes on diamond films under high power plasma etching conditions

International Nuclear Information System (INIS)

Villalpando, I.; John, P.; Wilson, J. I. B.

2017-01-01

The application of diamond as a plasma facing material for fusion reactors can be limited by unknown reactions between diamond and the chamber materials transported by the plasma. Transformation of diamond to other structures can cause problems such as contamination of the plasma with loose particles or retention of gases. We have seen that diamond thin films are eroded under hydrogen plasma etching, but if silicon is present the growth of various carbon structures on diamond films is observed. We have produced carbon with different morphologies on diamond films including fibres, sheets with flower-like shapes and tubes and proposed growth mechanisms based on the results of scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Sample surfaces contain silicon and are oxidised having COO and CO groups as seen by XP S analysis. Raman analyses revealed a spectrum typical for graphite combined with that from diamond that remains on the surface after hydrogen bombardment. The results of this sturdy show the experimental conditions in which carbon fibres, sheets and tubes are produced under high-power hydrogen etching of diamond films and open the possibility to other applications such as catalysts, sensors and the production of electrodes. (Author)

Development of large area silicon semiconductor detectors for use in the current mode

CERN Document Server

Ouyang Xia Opin; Li Zhen Fu; Zhang Guo Guang; Zhang Qi; Zhang Xia; Song Xian Cai; Jia Huan Yi; Lei Jian Hua; Sun Yuan Cheng

2002-01-01

Large area silicon semiconductor detectors for use in the current mode, with their dimensions of phi 40, phi 50 and phi 60 mm, their depletion thickness of 200-300 mu m, have been developed. Their performance measurements have been made, which indicate that the developed detectors can satisfactorily meet the needs in expectation. Compared with the detectors commercially available on the market, authors' large PIN detectors can serve both as reliable and efficient high-resolution devices for nuclear counting experiments, as well as monitors of high-intensity radiation fields in the current mode under a bias of 100-1000 V, while the detectors commercially available are only for the counting use

Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

International Nuclear Information System (INIS)

Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios; Shervin, Shahab

2017-01-01

Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400–600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3–6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude–Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ∼0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor. (paper)

Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

Science.gov (United States)

Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

2017-01-01

Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400-600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3-6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude-Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ~0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor.

Magnetic Properties and Structure of Non-Oriented Electrical Steel Sheets after Different Shape Processing

Czech Academy of Sciences Publication Activity Database

Bulín, Tomáš; Švábenská, Eva; Hapla, Miroslav; Ondrůšek, Č.; Schneeweiss, Oldřich

2017-01-01

Roč. 131, č. 4 (2017), s. 819-821 ISSN 0587-4246. [CSMAG 2016 - Czech and Slovak Conference on Magnetism /16./. Košice, 13.06.2016-17.06.2016] R&D Projects: GA TA ČR(CZ) TE02000232 Institutional support: RVO:68081723 Keywords : Magnetic properties * Silicon steel * Steel sheet Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 0.469, year: 2016

Prediction of power losses in silicon iron sheets under PWM voltage supply

International Nuclear Information System (INIS)

Amar, M.; Kaczmarek, R.; Protat, F.

1994-01-01

The behavior of iron losses in silicon iron steels submitted to a PWM voltage is studied. The influence of modulation parameters (the depth of modulation and the number of eliminated harmonics) is clarified. In particular, the idea of an equivalent alternating pulse voltage that gives the same iron losses as the PWM voltage is established. An estimation formula for iron losses under the PWM voltage is developed based on the loss separation model and the voltage form factor. ((orig.))

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

Science.gov (United States)

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments

Energy Technology Data Exchange (ETDEWEB)

Flaschel, Nils; Ariza, Dario; Diez, Sergio; Gregor, Ingrid-Maria; Tackmann, Kerstin [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Gerboles, Marta; Jorda, Xavier; Mas, Roser; Quirion, David; Ullan, Miguel [Centro Nacional de Microelectronica, Barcelona (Spain)

2017-01-15

Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today's prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype optimized to achieve a homogeneous flow distribution. Furthermore, the device was simulated using finite element methods.

Thermal and hydrodynamic studies for micro-channel cooling for large area silicon sensors in high energy physics experiments

International Nuclear Information System (INIS)

Flaschel, Nils; Ariza, Dario; Diez, Sergio; Gregor, Ingrid-Maria; Tackmann, Kerstin; Gerboles, Marta; Jorda, Xavier; Mas, Roser; Quirion, David; Ullan, Miguel

2017-01-01

Micro-channel cooling initially aiming at small-sized high-power integrated circuits is being transferred to the field of high energy physics. Today's prospects of micro-fabricating silicon opens a door to a more direct cooling of detector modules. The challenge in high energy physics is to save material in the detector construction and to cool large areas. In this paper, we are investigating micro-channel cooling as a candidate for a future cooling system for silicon detectors in a generic research and development approach. The work presented in this paper includes the production and the hydrodynamic and thermal testing of a micro-channel equipped prototype optimized to achieve a homogeneous flow distribution. Furthermore, the device was simulated using finite element methods.

Surface effects in segmented silicon sensors

Energy Technology Data Exchange (ETDEWEB)

Kopsalis, Ioannis

2017-05-15

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO{sub 2} layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO{sub 2} and at the Si-SiO{sub 2} interface. In this thesis the surface radiation damage of the Si-SiO{sub 2} system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO{sub 2} of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface

Surface effects in segmented silicon sensors

International Nuclear Information System (INIS)

Kopsalis, Ioannis

2017-05-01

Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface. In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

Porous siliconformation and etching process for use in silicon micromachining

Science.gov (United States)

Guilinger, Terry R.; Kelly, Michael J.; Martin, Jr., Samuel B.; Stevenson, Joel O.; Tsao, Sylvia S.

1991-01-01

A reproducible process for uniformly etching silicon from a series of micromechanical structures used in electrical devices and the like includes providing a micromechanical structure having a silicon layer with defined areas for removal thereon and an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. The micromechanical structure is submerged in the electrochemical cell and the defined areas of the silicon layer thereon are anodically biased by passing a current through the electrochemical cell for a time period sufficient to cause the defined areas of the silicon layer to become porous. The formation of the depth of the porous silicon is regulated by controlling the amount of current passing through the electrochemical cell. The micromechanical structure is then removed from the electrochemical cell and submerged in a hydroxide solution to remove the porous silicon. The process is subsequently repeated for each of the series of micromechanical structures to achieve a reproducibility better than 0.3%.

Decontamination sheet

International Nuclear Information System (INIS)

Hirose, Emiko; Kanesaki, Ken.

1995-01-01

The decontamination sheet of the present invention is formed by applying an adhesive on one surface of a polymer sheet and releasably appending a plurality of curing sheets. In addition, perforated lines are formed on the sheet, and a decontaminating agent is incorporated in the adhesive. This can reduce the number of curing operation steps when a plurality steps of operations for radiation decontamination equipments are performed, and further, the amount of wastes of the cured sheets, and operator's exposure are reduced, as well as an efficiency of the curing operation can be improved, and propagation of contamination can be prevented. (T.M.)

Geological interpretation of aeromagnetics and aeroradiometrics data of Carajas area - sheet SB-22-Z-A-III

International Nuclear Information System (INIS)

Marinho, F.A.V.; Azevedo, M.L.V. de.

1986-01-01

The upward continued map of sheet SB.22-Z-A-III in the Carajas Mineral Province shows the magnetic anomalies associated to the Leste Ridge, Carajas fault and Rabo Ridge to be more complex than apparent from the total magnetic field map. It also shows that the Carajas granite truncates metasediments of the Salobo Sequence northeast of the Carajas fault. First vertical derivative processing with reduction to the pole has been effective in the definition of the magnetic structures associated with the upper crustal sequences of the basement complex of the Carajas area and has made it possible the definition of the magnetic lineations associated with the tectonic structure of the area. The apparent magnetic susceptibility map has further reinforced the interpretted zones and the structures that were defined from the first vertical derivative map. The radiometric data were important in the definition of the granite borders and in the separation of the Salobo and Grao-Para units. This work suggest improvements to the geologic knowledge of this part of the Carajas area. Based on this geophysical interpretation and correlation with known mineralizations, prioirty areas have been identified as having high potencial for economic mineralization. Recommendations are made for more detailed geophysical follow-up studies in these areas. (author) [pt

The silicon vertex tracker for star and future applications of silicon drift detectors

International Nuclear Information System (INIS)

Bellwied, Rene

2001-01-01

The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

Simulations of the Scandinavian ice sheet and its subsurface conditions

International Nuclear Information System (INIS)

Boulton, G.S.; Caban, P.; Hulton, N.

1999-12-01

An ice sheet model has been applied to an approximate flow line through the area of the Fennoscandian ice sheet. The modelled ice sheet fluctuations have been matched with stratigraphic evidence of Weichselian ice sheet fluctuation in order to simulate ice sheet attributes through time along the flowline. The model predicts extensive melting at the base of the ice sheet. This output has been used as an input to a simplified model of hydrogeology along the southern flank of the ice sheet so as to reconstruct patterns of subglacial groundwater flow. The output from the model is also used to estimate patterns of subglacial stress and strain. Results suggest that large scale subglacial groundwater catchment are formed which were quite different in extent from modern catchment; that fossil subglacial groundwaters should be found at sampling depths; and much fracturing in shallow bedrock in Sweden could be glacially generated

Simulations of the Scandinavian ice sheet and its subsurface conditions

Energy Technology Data Exchange (ETDEWEB)

Boulton, G.S.; Caban, P.; Hulton, N. [Edinburgh Univ. (United Kingdom). Dept of Geology and Geophysics

1999-12-01

An ice sheet model has been applied to an approximate flow line through the area of the Fennoscandian ice sheet. The modelled ice sheet fluctuations have been matched with stratigraphic evidence of Weichselian ice sheet fluctuation in order to simulate ice sheet attributes through time along the flowline. The model predicts extensive melting at the base of the ice sheet. This output has been used as an input to a simplified model of hydrogeology along the southern flank of the ice sheet so as to reconstruct patterns of subglacial groundwater flow. The output from the model is also used to estimate patterns of subglacial stress and strain. Results suggest that large scale subglacial groundwater catchment are formed which were quite differentin extent from modern catchment; that fossil subglacial groundwaters should be found at sampling depths; and much fracturing in shallow bedrock in Sweden could be glacially generated.

Surface States and Effective Surface Area on Photoluminescent P-Type Porous Silicon

Science.gov (United States)

Weisz, S. Z.; Porras, A. Ramirez; Resto, O.; Goldstein, Y.; Many, A.; Savir, E.

1997-01-01

The present study is motivated by the possibility of utilizing porous silicon for spectral sensors. Pulse measurements on the porous-Si/electrolyte system are employed to determine the surface effective area and the surface-state density at various stages of the anodization process used to produce the porous material. Such measurements were combined with studies of the photoluminescence spectra. These spectra were found to shift progressively to the blue as a function of anodization time. The luminescence intensity increases initially with anodization time, reaches a maximum and then decreases with further anodization. The surface state density, on the other hand, increases with anodization time from an initial value of about 2 x 10(exp 12)/sq cm surface to about 1013 sq cm for the anodized surface. This value is attained already after -2 min anodization and upon further anodization remains fairly constant. In parallel, the effective surface area increases by a factor of 10-30. This behavior is markedly different from the one observed previously for n-type porous Si.

Infill of tunnel valleys associated with landward‐flowing ice sheets

DEFF Research Database (Denmark)

Moreau, Julien; Huuse, Mads

2014-01-01

The southern termination of the Middle and Late Pleistocene Scandinavian ice sheets was repeatedly located in the southern North Sea (sNS) and adjacent, north-sloping land areas. Giant meltwater-excavated valleys (tunnel valleys) formed at the southern termination of the ice sheets and contain...

Element depth profiles of porous silicon

International Nuclear Information System (INIS)

Kobzev, A.P.; Nikonov, O.A.; Kulik, M.; Zuk, J.; Krzyzanowska, H.; Ochalski, T.J.

1997-01-01

Element depth profiles of porous silicon were measured on the Van-de-Graaff accelerator in the energy range of 4 He + ions from 2 to 3.2 MeV. Application of complementary RBS, ERD and 16 O(α,α) 16 O nuclear reaction methods permits us to obtain: 1) the exact silicon, oxygen and hydrogen distribution in the samples, 2) the distribution of partial pore concentrations. The oxygen concentration in porous silicon reaches 30%, which allows one to assume the presence of silicon oxide in the pores and to explain the spectrum shift of luminescence into the blue area

Ultrathin Silicon Sheet in the Management of Unilateral Post-traumatic Temporo-Mandibuar Joint Ankylosis in Children: A Good Alternative to Conventional Techniques.

Science.gov (United States)

Aggarwal, Sushil Kumar; Ankur, Bhatnagar; Jain, R K

2015-09-01

We have described a new technique of using ultra-thin silicon sheet (0.2 mm) between two transected bony ends for temporo-mandibular joint (TMJ) ankylosis in children with advantages of short operative time, minimal foreign material insertion and faster recovery time post-operatively which makes our technique a good alternative to conventional techniques. Our study is a non-randomized prospective study conducted on 10 children aged between 4 and 15 years who presented to our tertiary care institute with severe trismus after traumatic injury and were willing to undergo this new technique. The main outcome measure taken into consideration was difference between pre-operative, intra-operative (on table) and post-operative mouth opening (minimum 2 years follow-up). The pre-operative mouth opening in our cases varied from 1 to 5 mm. The intra-operative mouth opening achieved ranged from 2.8 to 3.2 cm. The mouth opening was about more than 2.7 cm in all our cases at 2 years of follow-up. Our technique is a good alternative to conventional techniques used for TMJ ankylosis in children but few more randomized controlled trials are required to assess its effectiveness in comparison to conventional techniques and for universal adoption of this technique.

Ice sheet hydrology from observations

Energy Technology Data Exchange (ETDEWEB)

Jansson, Peter [Dept. of Physical Geography and Quaternary Geology, Stockholm Univ-, Stockholm (Sweden)

2010-11-15

possible that soft beds through their ability to deform and be eroded can yield quasi-stable patterns of drainage pathways that with either erosion of critical sills or filling of temporary basins may reorganize itself periodically on time scales much shorter than the reorganization of the driving stresses for ice flow. In areas where the surface generated water (melt and rain), the basally generated fluxes dwarf the influx from the surface and hence the drainage system in such areas will be dominated by surface fluxes and variations therein. Since surface fluxes have a strong seasonal variation with no influx during winter, areas experiencing surface influx will also be subject to large seasonal variations in both flux and pressure. In addition, during the melt season, fluxes and also pressures will also vary on diurnal as well as longer time frames in response to variations in air temperature that drives melt and occurrence of precipitation events. The emerging picture of glacier drainage consists of different types of models applicable to different regimes found beneath an ice sheet (with our without surface influx, ice streams, subglacial lakes). It is not, however, clear how these systems are coupled, or even if they are. This makes it inherently difficult to assess what can be expected beneath a given sector of an ice sheet without some detailed understanding of the underlying geology (geothermal fluxes), geomorphology (possible water routing) and ice properties (cold -temperate base and ice thickness)

Ice sheet hydrology from observations

International Nuclear Information System (INIS)

Jansson, Peter

2010-11-01

possible that soft beds through their ability to deform and be eroded can yield quasi-stable patterns of drainage pathways that with either erosion of critical sills or filling of temporary basins may reorganize itself periodically on time scales much shorter than the reorganization of the driving stresses for ice flow. In areas where the surface generated water (melt and rain), the basally generated fluxes dwarf the influx from the surface and hence the drainage system in such areas will be dominated by surface fluxes and variations therein. Since surface fluxes have a strong seasonal variation with no influx during winter, areas experiencing surface influx will also be subject to large seasonal variations in both flux and pressure. In addition, during the melt season, fluxes and also pressures will also vary on diurnal as well as longer time frames in response to variations in air temperature that drives melt and occurrence of precipitation events. The emerging picture of glacier drainage consists of different types of models applicable to different regimes found beneath an ice sheet (with our without surface influx, ice streams, subglacial lakes). It is not, however, clear how these systems are coupled, or even if they are. This makes it inherently difficult to assess what can be expected beneath a given sector of an ice sheet without some detailed understanding of the underlying geology (geothermal fluxes), geomorphology (possible water routing) and ice properties (cold -temperate base and ice thickness)

Development of Novel Front Contract Pastes for Crystalline Silicon Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Duty, C.; Jellison, D. G.E. P.; Joshi, P.

2012-04-05

In order to improve the efficiencies of silicon solar cells, paste to silicon contact formation mechanisms must be more thoroughly understood as a function of paste chemistry, wafer properties and firing conditions. Ferro Corporation has been involved in paste development for over 30 years and has extensive expertise in glass and paste formulations. This project has focused on the characterization of the interface between the top contact material (silver paste) and the underlying silicon wafer. It is believed that the interface between the front contact silver and the silicon wafer plays a dominant role in the electrical performance of the solar cell. Development of an improved front contact microstructure depends on the paste chemistry, paste interaction with the SiNx, and silicon (“Si”) substrate, silicon sheet resistivity, and the firing profile. Typical front contact ink contains silver metal powders and flakes, glass powder and other inorganic additives suspended in an organic medium of resin and solvent. During fast firing cycles glass melts, wets, corrodes the SiNx layer, and then interacts with underlying Si. Glass chemistry is also a critical factor in the development of an optimum front contact microstructure. Over the course of this project, several fundamental characteristics of the Ag/Si interface were documented, including a higher-than-expected distribution of voids along the interface, which could significantly impact electrical conductivity. Several techniques were also investigated for the interfacial analysis, including STEM, EDS, FIB, EBSD, and ellipsometry.

The split-cross-bridge resistor for measuring the sheet resistance, linewidth, and line spacing of conducting layers

Science.gov (United States)

Buehler, M. G.; Hershey, C. W.

1986-01-01

A new test structure was developed for evaluating the line spacing between conductors on the same layer using an electrical measurement technique. This compact structure can also be used to measure the sheet resistance, linewidth, and line pitch of the conducting layer. Using an integrated-circuit fabrication process, this structure was fabricated in diffused polycrystalline silicon and metal layers and measured optically and electrically. For the techniques used, the optical measurements were typically one-quarter micron greater than the electrical measurements. Most electrically measured line pitch values were within 2 percent of the designed value. A small difference between the measured and designed line pitch is used to validate sheet resistance, linewidth, and line spacing values.

Time-Efficient High-Resolution Large-Area Nano-Patterning of Silicon Dioxide

DEFF Research Database (Denmark)

Lin, Li; Ou, Yiyu; Aagesen, Martin

2017-01-01

A nano-patterning approach on silicon dioxide (SiO2) material, which could be used for the selective growth of III-V nanowires in photovoltaic applications, is demonstrated. In this process, a silicon (Si) stamp with nanopillar structures was first fabricated using electron-beam lithography (EBL....... In addition, high time efficiency can be realized by one-spot electron-beam exposure in the EBL process combined with NIL for mass production. Furthermore, the one-spot exposure enables the scalability of the nanostructures for different application requirements by tuning only the exposure dose. The size...

Study on Silicon detectors

International Nuclear Information System (INIS)

Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

1990-01-01

Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication

International Nuclear Information System (INIS)

Wang Huiquan; Jin Zhonghe; Zheng Yangming; Ma Huilian; Wang Yuelin; Li Tie

2008-01-01

Boron is selectively implanted on the surface of an n-type silicon wafer to form a p-type area surrounded by an n-type area. The wafer is then put into a buffered oxide etch solution. It is found that the n-type area can be selectively etched without illumination, with an etching rate lower than 1 nm min -1 , while the p-type area can be selectively etched under illumination with a much higher etching rate. The possible mechanism of the etching phenomenon is discussed. A simple fabrication process of silicon nanowires is proposed according to the above phenomenon. In this process only traditional micro-electromechanical system technology is used. Dimensions of the fabricated nanowire can be controlled well. A 50 nm wide and 50 nm thick silicon nanowire has been formed using this method

Large area silicon sheet by EFG. Fourth quarterly report, October 1-December 31, 1978

Energy Technology Data Exchange (ETDEWEB)

Wald, F.V.

1979-03-01

Crystal growth station no. 1 further explored displaced die concepts, along with some initial work on buckle characterization. Also, convective impurity redistribution was further studied. In particular, a side channel die was used to grow material doped with aluminum and compare the results at least semiquantitatively with computer calculations. The ribbons grown have not been characterized yet. In station no. 3A growth from single cartridges was continued to create a quality baseline to allow comparison of the results with those in the upcoming multiple run and to choose the most appropriate die design. Also fabrication and assembly work on the actual five ribbon furnace continued. On furnace 17 progress was made toward the development of the video optical system for edge position and meniscus height control. Also, in preparation for a detailed program, designed to explore the buckling problem, ribbon width ribon was then grown under stable conditions without a cold shoe, an achievement essential to finally arrive at quantitative correlations between growth conditions and buckle formation. The most significant result from the characterization program was a demonstration that the original runs with displaced dies were indeed reproducible, inasmuch as large area cells (7.5 x 7.5 cm/sup 2/) of approx. 9% efficiency could be fabricated again from run 18-103, a repeat of run no. 18-102 which had previously produced the best cells.

Overview of phosphorus diffusion and gettering in multicrystalline silicon

International Nuclear Information System (INIS)

Bentzen, A.; Holt, A.

2009-01-01

This paper gives an overview of phosphorus emitter diffusion and gettering as experienced in multicrystalline silicon solar cell processing. The paper gives a brief summary of the diffusion properties of phosphorus in silicon, explaining the nature behind the characteristic kink-and-tail profiles often encountered in silicon solar cells. Then, phosphorus diffusion gettering is discussed with particular focus to the inhomogeneous nature of multicrystalline silicon, and it is discussed how the abundant presence of dislocations in the areas of the material having a low recombination lifetime can cause only minor lifetime enhancements in such areas upon phosphorus diffusion. Attributed to dissociation of precipitated impurities in combination with longer effective diffusion lengths of the impurities, it is then seen that even poor areas of multicrystalline can exhibit a noticeable improvement by phosphorus diffusion gettering when applying a lower diffusion temperature for a longer duration.

Thermal tracing of retained meltwater in the lower accumulation area of the Southwestern Greenland ice sheet

DEFF Research Database (Denmark)

Charalampidis, Charalampos; Van As, Dirk; Colgan, William T.

2016-01-01

We present in situ firn temperatures from the extreme 2012 melt season in the southwestern lower accumulation area of the Greenland ice sheet. The upper 2.5 m of snow and firn was temperate during the melt season, when vertical meltwater percolation was inefficient due to a similar to 5.5 m thick...... no indication of meltwater percolation below 9 m depth or complete filling of pore volume above, firn at 10 and 15 m depth was respectively 4.2-4.5 ºC and 1.7 ºC higher than in a conductivity-only simulation. Even though meltwater percolation in 2012 was inefficient, firn between 2 and 15 m depth the following...

Corrosion Behavior of Brazed Zinc-Coated Structured Sheet Metal

Directory of Open Access Journals (Sweden)

A. Nikitin

2017-01-01

Full Text Available Arc brazing has, in comparison to arc welding, the advantage of less heat input while joining galvanized sheet metals. The evaporation of zinc is reduced in the areas adjacent to the joint and improved corrosion protection is achieved. In the automotive industry, lightweight design is a key technology against the background of the weight and environment protection. Structured sheet metals have higher stiffness compared to typical automobile sheet metals and therefore they can play an important role in lightweight structures. In the present paper, three arc brazing variants of galvanized structured sheet metals were validated in terms of the corrosion behavior. The standard gas metal arc brazing, the pulsed arc brazing, and the cold metal transfer (CMT® in combination with a pulsed cycle were investigated. In experimental climate change tests, the influence of the brazing processes on the corrosion behavior of galvanized structured sheet metals was investigated. After that, the corrosion behavior of brazed structured and flat sheet metals was compared. Because of the selected lap joint, the valuation of damage between sheet metals was conducted. The pulsed CMT brazing has been derived from the results as the best brazing method for the joining process of galvanized structured sheet metals.

Electronic structures of ultra-thin silicon carbides deposited on graphite

International Nuclear Information System (INIS)

Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

2004-01-01

Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH 3 ) 4 ) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiC x where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 deg. C, a new peak appeared around 1840 eV in the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of π*-like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the π*-like orbitals are nearly perpendicular to the surface. We conclude that sub-monolayered SiC x film exhibits flat-lying structure of which configuration is similar to a single sheet of graphite

Global ice sheet/RSL simulations using the higher-order Ice Sheet System Model.

Science.gov (United States)

Larour, E. Y.; Ivins, E. R.; Adhikari, S.; Schlegel, N.; Seroussi, H. L.; Morlighem, M.

2017-12-01

Relative sea-level rise is driven by processes that are intimately linked to the evolution ofglacial areas and ice sheets in particular. So far, most Earth System models capable of projecting theevolution of RSL on decadal to centennial time scales have relied on offline interactions between RSL andice sheets. In particular, grounding line and calving front dynamics have not been modeled in a way that istightly coupled with Elasto-Static Adjustment (ESA) and/or Glacial-Isostatic Adjustment (GIA). Here, we presenta new simulation of the entire Earth System in which both Greenland and Antarctica ice sheets are tightly coupledto an RSL model that includes both ESA and GIA at resolutions and time scales compatible with processes suchas grounding line dynamics for Antarctica ice shelves and calving front dynamics for Greenland marine-terminatingglaciers. The simulations rely on the Ice Sheet System Model (ISSM) and show the impact of higher-orderice flow dynamics and coupling feedbacks between ice flow and RSL. We quantify the exact impact of ESA andGIA inclusion on grounding line evolution for large ice shelves such as the Ronne and Ross ice shelves, as well asthe Agasea Embayment ice streams, and demonstate how offline vs online RSL simulations diverge in the long run,and the consequences for predictions of sea-level rise.This work was performed at the California Institute of Technology's Jet Propulsion Laboratory undera contract with the National Aeronautics and Space Administration's Cryosphere Science Program.

Noncontact sheet resistance measurement technique for wafer inspection

Science.gov (United States)

Kempa, Krzysztof; Rommel, J. Martin; Litovsky, Roman; Becla, Peter; Lojek, Bohumil; Bryson, Frank; Blake, Julian

1995-12-01

A new technique, MICROTHERM, has been developed for noncontact sheet resistance measurements of semiconductor wafers. It is based on the application of microwave energy to the wafer, and simultaneous detection of the infrared radiation resulting from ohmic heating. The pattern of the emitted radiation corresponds to the sheet resistance distribution across the wafer. This method is nondestructive, noncontact, and allows for measurements of very small areas (several square microns) of the wafer.

Investigation of migration of organic silicone into stone and its prevention; Silicone kei dansei secchakuzai no seibun ga sekizaichu ni shinto suru gensho no kyumei to shinto taisaku

Energy Technology Data Exchange (ETDEWEB)

Nakayama, M.; Sasaki, M. [Kajima Construction Co. Ltd., Tokyo (Japan)

1998-07-30

Quantitative analyses of silicone migration into marble from elastic silicon adhesive were carried out by EPMA and LMA, and the amount of migrated silicone was calculated in terms of silicone concentration. By EPMA, silicone distribution into the area centering around the boundary between elastic adhesive and marble was clarified, and the migrating condition of silicone from elastic adhesive to marble was made clear. In the case of LMA, silicone concentration in micro-area in marble was measured to use the measured result for the succeeding analyses. As a result of the analysis, the trend of the change of silicone migration with the passage of time could be expressed by treating the silicone migration as diffusion phenomenon, and the depth of silicone migration could be quantified. It was confirmed that the cover primer applied at the back of marble to inhibit migration could prevent contamination of marble caused by silicone migration. The analytical method of this study seemed to be applicable to other stone materials or other adhesive and sealing materials. 14 refs., 12 figs., 2 tabs.

A comprehensive study of the electrically conducting water based CuO and Al2O3 nanoparticles over coupled nanofluid-sheet interface

International Nuclear Information System (INIS)

Ahmad, R

2016-01-01

Many studies on nanofluid flow over a permeable/impermeable sheet prescribe the kinematics of the sheet and disregard the sheet’s mechanics. However, the current study is one of the infrequent contributions that anticipate the mechanics of both the electrically conducting nanofluid (a homogeneous mixture of nanoparticles and base fluid) and the sheet. Two types of nanoparticles, alumina and copper, with water as a base fluid over the sheet are considered. With the help of the similarity transformations, the corresponding partial differential equations for the coupled nanofluid-sheet interface are transformed into a system of ordinary differential equations. The simulations are done by using the experimentally verified results from the previous studies for viscosity and thermal conductivity. Self-similar solutions are attained by considering both analytical and numerical techniques. Dual skin friction coefficients are attained with different copper and alumina nanoparticles over both the stretching and viscous sheets. The influence of the Eckert number, magnetic and mass suction/blowing parameters on the dimensionless velocity, temperature, skin friction and heat transfer rates over the nanofluid-sheet interface are presented graphically as well as numerically. The obtained results are of potential benefit for studying nanofluid flow over various soft surfaces such as synthetic plastics, soft silicone sheet and soft synthetic rubber sheet. These surfaces are easily deformed by thermal fluctuations. (paper)

An 8.68% efficiency chemically-doped-free graphene-silicon solar cell using silver nanowires network buried contacts.

Science.gov (United States)

Yang, Lifei; Yu, Xuegong; Hu, Weidan; Wu, Xiaolei; Zhao, Yan; Yang, Deren

2015-02-25

Graphene-silicon (Gr-Si) heterojunction solar cells have been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the high sheet resistance of chemical vapor deposited (CVD) Gr films is still the most important limiting factor for the improvement of the power conversion efficiency of Gr-Si solar cells, especially in the case of large device-active area. In this work, we have fabricated a novel transparent conductive film by hybriding a monolayer Gr film with silver nanowires (AgNWs) network soldered by the graphene oxide (GO) flakes. This Gr-AgNWs hybrid film exhibits low sheet resistance and larger direct-current to optical conductivity ratio, quite suitable for solar cell fabrication. An efficiency of 8.68% has been achieved for the Gr-AgNWs-Si solar cell, in which the AgNWs network acts as buried contacts. Meanwhile, the Gr-AgNWs-Si solar cells have much better stability than the chemically doped Gr-Si solar cells. These results show a new route for the fabrication of high efficient and stable Gr-Si solar cells.

Effect of non-metallic precipitates and grain size on core loss of non-oriented electrical silicon steels

Science.gov (United States)

Wang, Jiayi; Ren, Qiang; Luo, Yan; Zhang, Lifeng

2018-04-01

In the current study, the number density and size of non-metallic precipitates and the size of grains on the core loss of the 50W800 non-oriented electrical silicon steel sheets were investigated. The number density and size of precipitates and grains were statistically analyzed using an automatic scanning electron microscope (ASPEX) and an optical microscope. Hypothesis models were established to reveal the physical feature for the function of grain size and precipitates on the core loss of the steel. Most precipitates in the steel were AlN particles smaller than 1 μm so that were detrimental to the core loss of the steel. These finer AlN particles distributed on the surface of the steel sheet. The relationship between the number density of precipitates (x in number/mm2 steel area) and the core loss (P1.5/50 in W/kg) was regressed as P1.5/50 = 4.150 + 0.002 x. The average grain size was approximately 25-35 μm. The relationship between the core loss and grain size (d in μm) was P1.5/50 = 3.851 + 20.001 d-1 + 60.000 d-2.

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto; Sevilla, Galo T.; Ghoneim, Mohamed T.; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M.; Hussain, Muhammad Mustafa

2014-01-01

In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100

Development of large-area silicon photomultiplier detectors for PET applications at FBK

Energy Technology Data Exchange (ETDEWEB)

Zorzi, Nicola, E-mail: zorzi@fbk.eu [Fondazione Bruno Kessler (FBK), Via Sommarive 18, I-38123 Trento Povo (Italy); Melchiorri, Mirko; Piazza, Alessandro; Piemonte, Claudio; Tarolli, Alessandro [Fondazione Bruno Kessler (FBK), Via Sommarive 18, I-38123 Trento Povo (Italy)

2011-04-21

This paper reports on the development of large-area silicon photomultiplier (SiPM) detectors specifically designed for positron emission tomography (PET) instruments. The sensors under study are monolithic arrays of two different types: a 2x2 array of {approx}4x4 mm{sup 2} elements and an 8x8 array of 1.5x1.5 mm{sup 2} pixels. These devices are characterized at wafer level by means of an automatic test procedure, consisting of current-voltage curves in forward and reverse bias. The tests allowed selection of functioning devices and evaluation of the uniformity of basic parameters. Results of the electrical characterization are reported showing that acceptable values of yield together with rather uniform distribution of parameters have been obtained. Reliability of produced SiPMs has been proved by long-term accelerated stress tests.

Development of large-area silicon photomultiplier detectors for PET applications at FBK

International Nuclear Information System (INIS)

Zorzi, Nicola; Melchiorri, Mirko; Piazza, Alessandro; Piemonte, Claudio; Tarolli, Alessandro

2011-01-01

This paper reports on the development of large-area silicon photomultiplier (SiPM) detectors specifically designed for positron emission tomography (PET) instruments. The sensors under study are monolithic arrays of two different types: a 2x2 array of ∼4x4 mm 2 elements and an 8x8 array of 1.5x1.5 mm 2 pixels. These devices are characterized at wafer level by means of an automatic test procedure, consisting of current-voltage curves in forward and reverse bias. The tests allowed selection of functioning devices and evaluation of the uniformity of basic parameters. Results of the electrical characterization are reported showing that acceptable values of yield together with rather uniform distribution of parameters have been obtained. Reliability of produced SiPMs has been proved by long-term accelerated stress tests.

Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide

NARCIS (Netherlands)

Itatani, K.; Tsukamoto, R.; Delsing, A.C.A.; Hintzen, H.T.J.M.; Okada, I.

2002-01-01

Aluminum nitride (AlN)-silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al4SiC4) with the specific surface area of 15.5 m2·g-1. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich

STM-excited luminescence of porous and spark-processed silicon

International Nuclear Information System (INIS)

Andrienko, I.; Kuznetsov, V.; Yuan, J.; Haneman, D.

1998-01-01

Full text: Scanning tunneling microscopy (STM) permits highly local electronic excitation of light emission (LE) from the surface of silicon. Measuring STM LE, one can study simultaneously both the topography and the luminescence properties of areas down to nm dimensions and thus make conclusions about the luminescence mechanism of the material. We have built an STM spectroscopy system which allows measurement of spectra of visible light emitted from areas as small as 13 x 13 nm 2 (porous silicon) and 10 x 10 nm 2 (spark-processed silicon). Porous silicon shows a broad emission band centered at 630 nm, and spark-processed silicon, one at 690 nm. The STM LE spectra of spark-processed silicon obtained for the first time. We have found that visible light is emitted only from areas containing nanometer-scale structures down to around 2 nm in diameter. STM LE occurs under negative bias voltage applied to the tip, i.e. when electrons are injected into the sample. Other workers used p-type silicon for the sample preparations, but it has been found that STM LE can be induced also from n-type silicon. Furthermore, we have shown that STM LE spectra can be resolved using much lover voltages and tunneling currents: -(7-9) V and 25 - 50 nA vs -(25-50) V and 100 nA. To consider different excitation mechanisms, the STM LE measurements are compared with photoluminescence and electroluminescence spectra of similar samples. We suggest that excitation of individual quantum confinement structures has been observed

Synthesis of silicon nanocrystals in silane plasmas for nanoelectronics and large area electronic devices

International Nuclear Information System (INIS)

Roca i Cabarrocas, P; Nguyen-Tran, Th; Djeridane, Y; Abramov, A; Johnson, E; Patriarche, G

2007-01-01

The synthesis of silicon nanocrystals in standard radio-frequency glow discharge systems is studied with respect to two main objectives: (i) the production of devices based on quantum size effects associated with the small dimensions of silicon nanocrystals and (ii) the synthesis of polymorphous and polycrystalline silicon films in which silicon nanocrystals are the elementary building blocks. In particular we discuss results on the mechanisms of nanocrystal formation and their transport towards the substrate. We found that silicon nanocrystals can contribute to a significant fraction of deposition (50-70%) and that they can be positively charged. This has a strong influence on their deposition because positively charged nanocrystals will be accelerated towards the substrate with energy of the order of the plasma potential. However, the important parameter with respect to the deposition of charged nanocrystals is not the accelerating voltage but the energy per atom and thus a doubling of the diameter will result in a decrease in the energy per atom by a factor of 8. To leverage this geometrical advantage we propose the use of more electronegative gases, which may have a strong effect on the size and charge distribution of the nanocrystals. This is illustrated in the case of deposition from silicon tetrafluoride plasmas in which we observe low-frequency plasma fluctuations, associated with successive generations of nanocrystals. The contribution of larger nanocrystals to deposition results in a lower energy per deposited atom and thus polycrystalline films

Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

KAUST Repository

Hussain, Aftab M.

2016-07-15

Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF2) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

KAUST Repository

Hussain, Aftab M.; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

2016-01-01

Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF2) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

Science.gov (United States)

Chow, Philippe K.; Yang, Wenjie; Hudspeth, Quentin; Lim, Shao Qi; Williams, Jim S.; Warrender, Jeffrey M.

2018-04-01

We demonstrate that pulsed laser melting (PLM) of thin 1, 5, and 10 nm-thick vapor-deposited gold layers on silicon enhances its room-temperature sub-band gap infrared absorption, as in the case of ion-implanted and PLM-treated silicon. The former approach offers reduced fabrication complexity and avoids implantation-induced lattice damage compared to ion implantation and pulsed laser melting, while exhibiting comparable optical absorptance. We additionally observed strong broadband absorptance enhancement in PLM samples made using 5- and 10-nm-thick gold layers. Raman spectroscopy and Rutherford backscattering analysis indicate that such an enhancement could be explained by absorption by a metastable, disordered and gold-rich surface layer. The sheet resistance and the diode electrical characteristics further elucidate the role of gold-supersaturation in silicon, revealing the promise for future silicon-based infrared device applications.

The LHCb Silicon Tracker

Energy Technology Data Exchange (ETDEWEB)

Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

2016-09-21

The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

THE MOTRU MINING BASIN – GIS APPLICATION ON SHEET EROSION

Directory of Open Access Journals (Sweden)

Anghel TITU

2008-05-01

Full Text Available The Motru Mining Basin – GIS Application on Sheet Erosion. The activation of the sheet erosion has important negative effects upon the soil profile. The anticipation of this geomorphologic process is important for taking some measures for protecting the susceptible areas. Within our study, we will carry out a quantitative estimation of the soil losses in the Motru Mining Basin, caused by the activation of the sheet erosion mechanism. We will apply the classic methodology proposed by the ROMSEM model of the USLE type by using the GIS technology

Probability based hydrologic catchments of the Greenland Ice Sheet

Science.gov (United States)

Hudson, B. D.

2015-12-01

Greenland Ice Sheet melt water impacts ice sheet flow dynamics, fjord and coastal circulation, and sediment and biogeochemical fluxes. Melt water exiting the ice sheet also is a key term in its mass balance. Because of this, knowledge of the area of the ice sheet that contributes melt water to a given outlet (its hydrologic catchment) is important to many ice sheet studies and is especially critical to methods using river runoff to assess ice sheet mass balance. Yet uncertainty in delineating ice sheet hydrologic catchments is a problem that is rarely acknowledged. Ice sheet catchments are delineated as a function of both basal and surface topography. While surface topography is well known, basal topography is less certain because it is dependent on radar surveys. Here, I a present a Monte Carlo based approach to delineating ice sheet catchments that quantifies the impact of uncertain basal topography. In this scheme, over many iterations I randomly vary the ice sheet bed elevation within published error bounds (using Morlighem et al., 2014 bed and bed error datasets). For each iteration of ice sheet bed elevation, I calculate the hydraulic potentiometric surface and route water over its path of 'steepest' descent to delineate the catchment. I then use all realizations of the catchment to arrive at a probability map of all major melt water outlets in Greenland. I often find that catchment size is uncertain, with small, random perturbations in basal topography leading to large variations in catchments size. While some catchments are well defined, others can double or halve in size within published basal topography error bars. While some uncertainty will likely always remain, this work points to locations where studies of ice sheet hydrology would be the most successful, allows reinterpretation of past results, and points to where future radar surveys would be most advantageous.

Atomic and electronic structures of novel silicon surface structures

Energy Technology Data Exchange (ETDEWEB)

Terry, J.H. Jr.

1997-03-01

The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will lead to useful electronic devices by pairing these modified surfaces with traditional silicon device technology. Therefore, silicon wafers with modified electronic structure (light-emitting porous silicon), passivated surfaces (H-Si(111), Cl-Si(111), Alkyl-Si(111)), and functionalized surfaces (Alkyl-Si(111)) have been studied in order to determine the fundamental properties of surface geometry and electronic structure using synchrotron radiation-based techniques.

W-Band Sheet Beam Klystron Design

International Nuclear Information System (INIS)

Scheitrum, G.; Caryotakis, G.; Burke, A.; Jensen, A.; Jongewaard, E.; Krasnykh, A.; Neubauer, M.; Phillips, R.; Rauenbuehler, K.

2011-01-01

Sheet beam devices provide important advantages for very high power, narrow bandwidth RF sources like accelerator klystrons (1). Reduced current density and increased surface area result in increased power capabi1ity, reduced magnetic fields for focusing and reduced cathode loading. These advantages are offset by increased complexity, beam formation and transport issues and potential for mode competition in the ovennoded cavities and drift tube. This paper will describe the design issues encountered in developing a 100 kW peak and 2 kW average power sheet beam k1ystron at W-band including beam formation, beam transport, circuit design, circuit fabrication and mode competition.

Microstructure evolution of a dissimilar junction interface between an Al sheet and a Ni-coated Cu sheet joined by magnetic pulse welding

Energy Technology Data Exchange (ETDEWEB)

Itoi, Takaomi, E-mail: itoi@faculty.chiba-u.jp [Department of Mechanical Engineering, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Mohamad, Azizan Bin; Suzuki, Ryo [Department of Mechanical Engineering, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Okagawa, Keigo [Department of Electrical and Electronics Engineering, Tokyo Metropolitan College of Industrial Technology, 1-10-40 Higashi ohi, Shinagawa-ku, Tokyo 140-0011 (Japan)

2016-08-15

An Al sheet and a Ni-coated Cu sheet were lap joined by using magnetic pulse welding (MPW). Tensile tests were performed on the joined sheets, and a good lap joint was achieved at a discharge energy of > 0.9 kJ. The weld interface exhibited a wavy morphology and an intermediate layer along the weld interface. Microstructure observations of the intermediate layer revealed that the Ni coating region consisted of a Ni–Al binary amorphous alloy and that the Al sheet region contained very fine Al nanograins. Ni fragments indicative of unmelted residual Ni from the coating were also observed in parts of the intermediate layer. Formation of these features can be attributed to localize melting and a subsequent high rate cooling of molten Al and Ni confined to the interface during the MPW process. In the absence of an oxide film, atomic-scale bonding was also achieved between the intermediate layer and the sheet surfaces after the collision. MPW utilises impact energy, which affects the sheet surfaces. From the obtained results, good lap joint is attributed to an increased contact area, the anchor effect, work hardening, the absence of an oxide film, and suppressed formation of intermetallic compounds at the interface. - Highlights: •Good lap joint of an Al sheet and a Ni-coated Cu sheet was achieved by using magnetic pulse welding. •A Ni–Al binary amorphous alloy was formed as an intermediate layer at weld interface. •Atomic-scale bonding was achieved between the intermediate layer and the sheet surfaces.

Method of fabricating porous silicon carbide (SiC)

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1995-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Substructure and electrical resistivity analyses of pure tungsten sheet

International Nuclear Information System (INIS)

Trybus, C.L.; Sellers, C.H.; Anderl, R.A.

1991-01-01

The substructure of pure tungsten sheet (0.025 mm thick) is examined and quantified by transmission electron microscopy (TEM). Dislocation populations and arrangements are evaluated for as-worked and various annealed conditions of the tungsten sheet. The worked (rolled) tungsten substructure was nonhomogeneous, consisting of areas of very high and low dislocation densities. These results are correlated to resistivity measurements of the tungsten sheet following thermal cycling to 1200 degrees C to determine the substructural changes as a function of temperature. The comparison between the two characterization techniques is used to examine the relationship between structural and electronic properties in tungsten. 15 refs., 6 figs., 2 tabs

Laser Indirect Shock Welding of Fine Wire to Metal Sheet.

Science.gov (United States)

Wang, Xiao; Huang, Tao; Luo, Yapeng; Liu, Huixia

2017-09-12

The purpose of this paper is to present an advanced method for welding fine wire to metal sheet, namely laser indirect shock welding (LISW). This process uses silica gel as driver sheet to accelerate the metal sheet toward the wire to obtain metallurgical bonding. A series of experiments were implemented to validate the welding ability of Al sheet/Cu wire and Al sheet/Ag wire. It was found that the use of a driver sheet can maintain high surface quality of the metal sheet. With the increase of laser pulse energy, the bonding area of the sheet/wire increased and the welding interfaces were nearly flat. Energy dispersive spectroscopy (EDS) results show that the intermetallic phases were absent and a short element diffusion layer which would limit the formation of the intermetallic phases emerging at the welding interface. A tensile shear test was used to measure the mechanical strength of the welding joints. The influence of laser pulse energy on the tensile failure modes was investigated, and two failure modes, including interfacial failure and failure through the wire, were observed. The nanoindentation test results indicate that as the distance to the welding interface decreased, the microhardness increased due to the plastic deformation becoming more violent.

Dense sheet Z-pinches

International Nuclear Information System (INIS)

Tetsu, Miyamoto

1999-01-01

The steady state and quasi-steady processes of infinite- and finite-width sheet z-pinches are studied. The relations corresponding to the Bennett relation and Pease-Braginskii current of cylindrical fiber z-pinches depend on a geometrical factor in the sheet z-pinches. The finite-width sheet z-pinch is approximated by a segment of infinite-width sheet z-pinch, if it is wide enough, and corresponds to a number of (width/thickness) times fiber z-pinch plasmas of the diameter that equals the sheet thickness. If the sheet current equals this number times the fiber current, the plasma created in the sheet z-pinches is as dense as in the fiber z-pinches. The total energy of plasma and magnetic field per unit mass is approximately equal in both pinches. Quasi-static transient processes are different in several aspects from the fiber z-pinch. No radiation collapse occurs in the sheet z-pinch. The stability is improved in the sheet z-pinches. The fusion criterions and the experimental arrangements to produce the sheet z-pinches are also discussed. (author)

Electronics and readout of a large area silicon detector for LHC

International Nuclear Information System (INIS)

Borer, K.; Munday, D.J.; Parker, M.A.; Anghinolfi, F.; Aspell, P.; Campbell, M.; Chilingarov, A.; Jarron, P.; Heijne, E.H.M.; Santiard, J.C.; Scampoli, P.; Verweij, H.; Goessling, C.; Lisowski, B.; Reichold, A.; Spiwoks, R.; Tsesmelis, E.; Benslama, K.; Bonino, R.; Clark, A.G.; Couyoumtzelis, C.; Kambara, H.; Wu, X.; Fretwurst, E.; Lindstroem, G.; Schultz, T.; Bardos, R.A.; Gorfine, G.W.; Moorhead, G.F.; Taylor, G.N.; Tovey, S.N.; Bibby, J.H.; Hawkings, R.J.; Kundu, N.; Weidberg, A.; Campbell, D.; Murray, P.; Seller, P.; Teiger, J.

1994-01-01

The purpose of the RD2 project is to evaluate the feasibility of a silicon tracker and/or preshower detector for LHC. Irradiation studies with doses equivalent to those expected at LHC have been performed to determine the behavior of operational parameters such as leakage current, depletion voltage and charge collection during the life of the detector. The development of fast, dense, low power and low cost signal processing electronics is one of the major activities of the collaboration. We describe the first fully functional integrated analog memory chip with asynchronous read and write operations and level 1 trigger capture capabilities. A complete test beam system using this analog memory chip at 66 MHz has been successfully operated with RD2 prototype silicon detectors during various test runs. The flexibility of the electronics and readout have allowed us to easily interface our set-up to other data acquisition systems. Mechanical studies are in progress to design a silicon tracking detector with several million channels that may be operated at low (0-10 C) temperature, while maintaining the required geometrical precision. Prototype readout boards for such a detector are being developed and simulation studies are being performed to optimize the readout architecture. (orig.)

Design criteria for XeF{sub 2} enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

Energy Technology Data Exchange (ETDEWEB)

Hussain, Aftab M.; Shaikh, Sohail F.; Hussain, Muhammad M., E-mail: muhammadmustafa.hussain@kaust.edu.sa [Integrated Nanotechnology Laboratory (INL) and Integrated Disruptive Electronics Applications (IDEA) Laboratory, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology - KAUST, Thuwal 23955-6900 (Saudi Arabia)

2016-07-15

Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF{sub 2}) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth

KAUST Repository

Tomasi, Andrea; Paviet-Salomon, Bertrand; Jeangros, Quentin; Haschke, Jan; Christmann, Gabriel; Barraud, Loris; Descoeudres, Antoine; Seif, Johannes Peter; Nicolay, Sylvain; Despeisse, Matthieu; De Wolf, Stefaan; Ballif, Christophe

2017-01-01

For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron and hole contacts at the back of the solar cell to liberate its front from any shadowing loss. Recently, the world-record efficiency for crystalline-silicon single-junction solar cells was achieved by merging these two approaches in a single device; however, the complexity of fabricating this class of devices raises concerns about their commercial potential. Here we show a contacting method that substantially simplifies the architecture and fabrication of back-contacted silicon solar cells. We exploit the surface-dependent growth of silicon thin films, deposited by plasma processes, to eliminate the patterning of one of the doped carrier-collecting layers. Then, using only one alignment step for electrode definition, we fabricate a proof-of-concept 9-cm2 tunnel-interdigitated back-contact solar cell with a certified conversion efficiency >22.5%.

Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth

KAUST Repository

Tomasi, Andrea

2017-04-24

For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron and hole contacts at the back of the solar cell to liberate its front from any shadowing loss. Recently, the world-record efficiency for crystalline-silicon single-junction solar cells was achieved by merging these two approaches in a single device; however, the complexity of fabricating this class of devices raises concerns about their commercial potential. Here we show a contacting method that substantially simplifies the architecture and fabrication of back-contacted silicon solar cells. We exploit the surface-dependent growth of silicon thin films, deposited by plasma processes, to eliminate the patterning of one of the doped carrier-collecting layers. Then, using only one alignment step for electrode definition, we fabricate a proof-of-concept 9-cm2 tunnel-interdigitated back-contact solar cell with a certified conversion efficiency >22.5%.

Silicon ribbon technology assessment 1978-1986 - A computer-assisted analysis using PECAN

Science.gov (United States)

Kran, A.

1978-01-01

The paper presents a 1978-1986 economic outlook for silicon ribbon technology based on the capillary action shaping technique. The outlook is presented within the framework of two sets of scenarios, which develop strategy for approaching the 1986 national energy capacity cost objective of $0.50/WE peak. The PECAN (Photovoltaic Energy Conversion Analysis) simulation technique is used to develop a 1986 sheet material price ($50/sq m) which apparently can be attained without further scientific breakthrough.

The Potsdam Parallel Ice Sheet Model (PISM-PIK) - Part 2: Dynamic equilibrium simulation of the Antarctic ice sheet

Science.gov (United States)

Martin, M. A.; Winkelmann, R.; Haseloff, M.; Albrecht, T.; Bueler, E.; Khroulev, C.; Levermann, A.

2011-09-01

We present a dynamic equilibrium simulation of the ice sheet-shelf system on Antarctica with the Potsdam Parallel Ice Sheet Model (PISM-PIK). The simulation is initialized with present-day conditions for bed topography and ice thickness and then run to steady state with constant present-day surface mass balance. Surface temperature and sub-shelf basal melt distribution are parameterized. Grounding lines and calving fronts are free to evolve, and their modeled equilibrium state is compared to observational data. A physically-motivated calving law based on horizontal spreading rates allows for realistic calving fronts for various types of shelves. Steady-state dynamics including surface velocity and ice flux are analyzed for whole Antarctica and the Ronne-Filchner and Ross ice shelf areas in particular. The results show that the different flow regimes in sheet and shelves, and the transition zone between them, are captured reasonably well, supporting the approach of superposition of SIA and SSA for the representation of fast motion of grounded ice. This approach also leads to a natural emergence of sliding-dominated flow in stream-like features in this new 3-D marine ice sheet model.

Stable anodes for lithium ion batteries made of self-organized mesoporous silicon

International Nuclear Information System (INIS)

Wolter, Sascha J; Köntges, Marc; Brendel, Rolf; Bahnemann, Detlef

2016-01-01

Alloy-forming compounds, such as electrodes for lithium ion batteries, stand out in terms of their theoretical specific charge capacity while still lacking in mechanical stability due to significant volume changes during operation. Herein, we examine the approach of combining low structural dimensions of the active material with built-in expansion volumes and assess their benefit for silicon anodes in lithium ion batteries. Consequently, self-organized mesoporous silicon is prepared as a suitable anode material for lithium ion batteries without any pre-structuring methods. The anodes are made by employing electrochemical etching methods in a scalable process and are characterized by ellipsometry. Thermally evaporated copper is utilized as the current collector. A sheet of freestanding silicon in contact with copper is used as an anode material with a thickness of 3 μm. After an initialization phase, electrochemical characterization reveals an anode stability of more than 160 cycles with a specific charge capacity of 730 mAh/g. The mechanical stability of the anode is examined by taking SEM measurements of the used electrode material. (paper)

Solar cell fabricated on welded thin flexible silicon

Directory of Open Access Journals (Sweden)

Hessmann Maik Thomas

2015-01-01

Full Text Available We present a thin-film crystalline silicon solar cell with an AM1.5 efficiency of 11.5% fabricated on welded 50 μm thin silicon foils. The aperture area of the cell is 1.00 cm2. The cell has an open-circuit voltage of 570 mV, a short-circuit current density of 29.9 mA cm-2 and a fill factor of 67.6%. These are the first results ever presented for solar cells on welded silicon foils. The foils were welded together in order to create the first thin flexible monocrystalline band substrate. A flexible band substrate offers the possibility to overcome the area restriction of ingot-based monocrystalline silicon wafers and the feasibility of a roll-to-roll manufacturing. In combination with an epitaxial and layer transfer process a decrease in production costs can be achieved.

Errata Sheet for Closure Report for Corrective Action Unit 254: Area 25 R-MAD Decontamination Facility, Nevada Test Site, Nevada

International Nuclear Information System (INIS)

NSTec Environmental Restoration

2007-01-01

Errata Sheet--The survey map referenced on Page F-10 is a draft. This errata sheet replaces the map with a final version. All recipients of this errata sheet shall replace Page F-10 with the attached map

Silicon-germanium and platinum silicide nanostructures for silicon based photonics

Science.gov (United States)

Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

2017-05-01

This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

Silicon drift detectors, present and future prospects

Science.gov (United States)

Takahashi, J.; Bellwied, R.; Beuttenmuller, R.; Caines, H.; Chen, W.; Dyke, H.; Hoffmann, G. W.; Humanic, T.; Kotov, I.; Kuczewski, P.; Leonhardt, W.; Li, Z.; Lynn, D.; Minor, R.; Munhoz, M.; Ott, G.; Pandey, S. U.; Schambach, J.; Soja, R.; Sugarbaker, E.; Willson, R. M.

2001-04-01

Silicon drift detectors provide unambiguous two-dimensional position information for charged particle detection with a single detector layer. A large area silicon drift detector was developed for the inner tracking detector of the STAR experiment at RHIC. In this paper, we discuss the lessons learned and the future prospects of this technology.

Silicon photonics: some remaining challenges

Science.gov (United States)

Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

2016-03-01

This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

Spiral silicon drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

1988-01-01

An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

Experimental analysis of Nd-YAG laser cutting of sheet materials - A review

Science.gov (United States)

Sharma, Amit; Yadava, Vinod

2018-01-01

Cutting of sheet material is considered as an important process due to its relevance among products of everyday life such as aircrafts, ships, cars, furniture etc. Among various sheet cutting processes (ASCPs), laser beam cutting is one of the most capable ASCP to create complex geometries with stringent design requirements in difficult-to-cut sheet materials. Based on the recent research work in the area of sheet cutting, it is found that the Nd-YAG laser is used for cutting of sheet material in general and reflective sheet material in particular. This paper reviews the experimental analysis of Nd-YAG laser cutting process, carried out to study the influence of laser cutting parameters on the process performance index. The significance of experimental modeling and different optimization approaches employed by various researchers has also been discussed in this study.

Intermontane eolian sand sheet development, Upper Tulum Valley, central-western Argentina

Directory of Open Access Journals (Sweden)

Patrick Francisco Fuhr Dal' Bó

Full Text Available ABSTRACTThe intermontane Upper Tulum eolian sand sheet covers an area of ca. 125 km² at north of the San Juan Province, central-western Argentina. The sand sheet is currently an aggrading system where vegetation cover, surface cementation and periodic flooding withhold the development of dunes with slipfaces. The sand sheet surface is divided into three parts according to the distribution of sedimentary features, which reflects the variation in sediment budget, water table level and periodic flooding. The central sand sheet part is the main area of eolian deposition and is largely stabilized by vegetation. The sedimentary succession is 4 m thick and records the vertical interbedding of eolian and subaqueous deposits, which have been deposited for at least 3.6 ky with sedimentation rates of 86.1 cm/ky. The construction of the sand sheet is associated with deflation of the sand-graded debris sourced by San Juan alluvial fan, which is available mainly in drier fall-winter months where water table is lower and wind speeds are periodically above the threshold velocity for sand transport. The accumulation of sedimentary bodies occurs in a stabilized eolian system where vegetation cover, thin mud veneers and surface cementation are the main agents in promoting accumulation. The preservation of the sand sheet accumulations is enabled by the progressive creation of the accommodation space in a tectonically active basin and the continuous burial of geological bodies favored by high rates of sedimentation.

Stresses, fatigue and fracture analysis in the tube sheets

International Nuclear Information System (INIS)

Billon, F.

1986-05-01

The purpose of the present work is to study the behaviour of the nuclear PWR steam generator tube sheet. But the methods developed in this field can easily be generalized in order to study tube sheets from any other type of heat exchangers. The aim of the stress analysis of these sheets is to verify their correct design, to quantify the risk of fatigue damage in the areas submitted to a high stress concentration and through the fracture mechanic, to make sure there is no risk of fast fracture resulting from initiated or pre-existing defects. This analysis necessarily relates to the calculation of stresses in all parts of the multidrilled area, mainly around the holes where they are concentrated. However the tube sheets are so complexe structures that their direct modelization cannot be envisaged within the context of the finite element method. We then must refer to the concept of equivalent medium in order to calculate the nominal stresses. Then using the stresses multiple fonctions appropriate to the net geometry, we can calculate the actual stresses concentrated around the holes. The method depends on the behaviour of the elementary volume which represents the behaviour of the multidrilled medium. This approach must allow to correctly take account of the ''thermal skin effect'', which is a phenomenon particular to the tube sheets with thermal loads. It must as well be generalized in order to analyse the irregular ligaments which affect the periodical stresses distribution and locally overconcentrate them [fr

Aerial radiometric and magnetic survey; Brushy Basin detail survey: Price/Salina national topographic map sheets, Utah. Volume III. Area II: graphic data, Section III-IX Final report

International Nuclear Information System (INIS)

1981-01-01

This volume contains all of the graphic data for Area II, which include map lines 1660 to 3400 and 5360 to 5780 and tie lines 6100, 6120, and 6160. Due to the large map scale of the data presented (1:62,500), this area was further subdivided into eleven 7-1/2 min quadrant sheets. It should be noted that TL6100 resides in both Areas II and III. The graphic data for TL6100 are presented in Volume IV - Area III - Graphic Data of this report

Extending remote sensing estimates of Greenland ice sheet melting

Science.gov (United States)

Heavner, M.; Loveland, R.

2010-12-01

The Melt Area Detection Index (MADI), a remote sensing algorithm to discriminate between dry and wet snow, has been previously developed and applied to the western portion of the Greenland ice sheet for the years 2000-2006, using Moderate Resolution Imaging Radiospectrometer (MODIS) data (Chylek et al, 2007). We extend that work both spatially and temporally by taking advantage of newly available data, and developing algorithms that facilitate the sensing of cloud cover and the automated inference of wet snow regions. The automated methods allow the development of a composite melt area data product with 0.25 km^2 spatial resolution and approximately two week temporal resolution. We discuss melt area dynamics that are inferred from this high resolution composite melt area. Chylek, P., M. McCabe, M. K. Dubey, and J. Dozier (2007), Remote sensing of Greenland ice sheet using multispectral near-infrared and visible radiances, J. Geophys. Res., 112, D24S20, doi:10.1029/2007JD008742.

Characterization of Platinum Nanoparticles Deposited on Functionalized Graphene Sheets

Directory of Open Access Journals (Sweden)

Yu-Chun Chiang

2015-09-01

Full Text Available Due to its special electronic and ballistic transport properties, graphene has attracted much interest from researchers. In this study, platinum (Pt nanoparticles were deposited on oxidized graphene sheets (cG. The graphene sheets were applied to overcome the corrosion problems of carbon black at operating conditions of proton exchange membrane fuel cells. To enhance the interfacial interactions between the graphene sheets and the Pt nanoparticles, the oxygen-containing functional groups were introduced onto the surface of graphene sheets. The results showed the Pt nanoparticles were uniformly dispersed on the surface of graphene sheets with a mean Pt particle size of 2.08 nm. The Pt nanoparticles deposited on graphene sheets exhibited better crystallinity and higher oxygen resistance. The metal Pt was the predominant Pt chemical state on Pt/cG (60.4%. The results from the cyclic voltammetry analysis showed the value of the electrochemical surface area (ECSA was 88 m2/g (Pt/cG, much higher than that of Pt/C (46 m2/g. The long-term test illustrated the degradation in ECSA exhibited the order of Pt/C (33% > Pt/cG (7%. The values of the utilization efficiency were calculated to be 64% for Pt/cG and 32% for Pt/C.

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

The Potsdam Parallel Ice Sheet Model (PISM-PIK – Part 2: Dynamic equilibrium simulation of the Antarctic ice sheet

Directory of Open Access Journals (Sweden)

M. A. Martin

2011-09-01

Full Text Available We present a dynamic equilibrium simulation of the ice sheet-shelf system on Antarctica with the Potsdam Parallel Ice Sheet Model (PISM-PIK. The simulation is initialized with present-day conditions for bed topography and ice thickness and then run to steady state with constant present-day surface mass balance. Surface temperature and sub-shelf basal melt distribution are parameterized. Grounding lines and calving fronts are free to evolve, and their modeled equilibrium state is compared to observational data. A physically-motivated calving law based on horizontal spreading rates allows for realistic calving fronts for various types of shelves. Steady-state dynamics including surface velocity and ice flux are analyzed for whole Antarctica and the Ronne-Filchner and Ross ice shelf areas in particular. The results show that the different flow regimes in sheet and shelves, and the transition zone between them, are captured reasonably well, supporting the approach of superposition of SIA and SSA for the representation of fast motion of grounded ice. This approach also leads to a natural emergence of sliding-dominated flow in stream-like features in this new 3-D marine ice sheet model.

Comparative study of the biodegradability of porous silicon films in simulated body fluid.

Science.gov (United States)

Peckham, J; Andrews, G T

2015-01-01

The biodegradability of oxidized microporous, mesoporous and macroporous silicon films in a simulated body fluid with ion concentrations similar to those found in human blood plasma were studied using gravimetry. Film dissolution rates were determined by periodically weighing the samples after removal from the fluid. The dissolution rates for microporous silicon were found to be higher than those for mesoporous silicon of comparable porosity. The dissolution rate of macroporous silicon was much lower than that for either microporous or mesoporous silicon. This is attributed to the fact that its specific surface area is much lower than that of microporous and mesoporous silicon. Using an equation adapted from [Surf. Sci. Lett. 306 (1994), L550-L554], the dissolution rate of porous silicon in simulated body fluid can be estimated if the film thickness and specific surface area are known.

Light management in large area thin-film silicon solar modules

Czech Academy of Sciences Publication Activity Database

Losio, P.A.; Caglar, O.; Cashmore, J.S.; Hötzel, J.E.; Ristau, S.; Holovský, Jakub; Remeš, Zdeněk; Sinicco, I.

2015-01-01

Roč. 143, Dec (2015), s. 375-385 ISSN 0927-0248 R&D Projects: GA ČR(CZ) GA14-05053S Institutional support: RVO:68378271 Keywords : micromorph * thin-film silicon solar cells * light management * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

A novel ultra-low carbon grain oriented silicon steel produced by twin-roll strip casting

Energy Technology Data Exchange (ETDEWEB)

Wang, Yang, E-mail: wy069024019@163.com [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Zhang, Yuan-Xiang; Lu, Xiang; Fang, Feng; Xu, Yun-Bo; Cao, Guang-Ming; Li, Cheng-Gang [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Misra, R.D.K. [Laboratory for Excellence in Advanced Steel Research, Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, TX 79968 (United States); Wang, Guo-Dong [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China)

2016-12-01

A novel ultra-low carbon grain oriented silicon steel was successfully produced by strip casting and two-stage cold rolling method. The microstructure, texture and precipitate evolution under different first cold rolling reduction were investigated. It was shown that the as-cast strip was mainly composed of equiaxed grains and characterized by very weak Goss texture ({110}<001>) and λ-fiber (<001>//ND). The coarse sulfides of size ~100 nm were precipitated at grain boundaries during strip casting, while nitrides remained in solution in the as-cast strip and the fine AlN particles of size ~20–50 nm, which were used as grain growth inhibitors, were formed in intermediate annealed sheet after first cold rolling. In addition, the suitable Goss nuclei for secondary recrystallization were also formed during intermediate annealing, which is totally different from the conventional process that the Goss nuclei originated in the subsurface layer of the hot rolled sheet. Furthermore, the number of AlN inhibitors and the intensity of desirable Goss texture increased with increasing first cold rolling reduction. After secondary recrystallization annealing, very large grains of size ~10–40 mm were formed and the final magnetic induction, B{sub 8}, was as high as 1.9 T. - Highlights: • A novel chemical composition base on strip casting silicon steel was proposed. • The ultra-low carbon design could shorten the processing routes. • The novel composition and processes were beneficial to obtain more inhibitors. • The magnetic induction of grain oriented silicon steel was significantly improved.

Laser tests of silicon detectors

International Nuclear Information System (INIS)

Dolezal, Zdenek; Escobar, Carlos; Gadomski, Szymon; Garcia, Carmen; Gonzalez, Sergio; Kodys, Peter; Kubik, Petr; Lacasta, Carlos; Marti, Salvador; Mitsou, Vasiliki A.; Moorhead, Gareth F.; Phillips, Peter W.; Reznicek, Pavel; Slavik, Radan

2007-01-01

This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented

Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe

International Nuclear Information System (INIS)

Benjamin, M.C.; Hillard, R.J.; Borland, J.O.

2005-01-01

An accurate method to measure the four point probe (4PP) sheet resistance (R S ) of ultra shallow junction (USJ) Source-Drain Extension structures is described. The method utilizes Elastic Material probes (EM-probes) to form non-penetrating contacts to the silicon surface [R.J. Hillard, P.Y. Hung, William Chism, C. Win Ye, W.H. Howland, L.C. Tan, C.E. Kalnas, Characterization and Metrology for ULSI Technology, AIP Conference proceedings 683 (2003) 802.]. The probe design is kinematic and the force is controlled to ensure elastic deformation of the probe material. The probe material is such that large direct tunneling currents can flow through the native oxide thereby forming a low impedance contact. Sheet resistance measurements on USJ implanted P+/N structures with Secondary Ion Mass Spectroscopy (SIMS) junction depths less than 15 nm have been measured. The method is demonstrated on implanted USJ structures and found to be consistent with expectations

Selective CVD tungsten on silicon implanted SiO/sub 2/

International Nuclear Information System (INIS)

Hennessy, W.A.; Ghezzo, M.; Wilson, R.H.; Bakhru, H.

1988-01-01

The application range of selective CVD tungsten is extended by its coupling to the ion implantation of insulating materials. This article documents the results of selective CVD tungsten using silicon implanted into SiO/sub 2/ to nucleate the tungsten growth. The role of implant does, energy, and surface preparation in achieving nucleation are described. SEM micrographs are presented to demonstrate the selectivity of this process. Measurements of the tungsten film thickness and sheet resistance are provided for each of the experimental variants corresponding to successful deposition. RBS and XPS analysis are discussed in terms of characterizing the tungsten/oxide interface and to evaluate the role of the silicon implant in the CVD tungsten mechanism. Utilizing this method a desired metallization pattern can be readily defined with lithography and ion implantation, and accurately replicated with a layer of CVD tungsten. This approach avoids problems usually associated with blanket deposition and pattern transfer, which are particularly troublesome for submicron VLSI technology

The distribution of silicon on BP Boo

International Nuclear Information System (INIS)

Hatzes, A.P.

1990-01-01

A version of the Doppler imaging technique which incorporates the principles of maximum entropy reconstruction is used to derive the silicon distribution on the Ap star BP Boo (HR 5857). The method used made it possible to detect an error in the published photometric period and a new value of 1.29557 d was determined. The silicon distribution consists of two depleted spots of unequal area separated by about 180deg in longitude. These spots may coincide with the location of the magnetic poles of the star as in the case of γ 2 Ari. Near the larger of the depleted silicon spots is a spot of enhanced abundance. The unequal area of the depleted spots as well as the close proximity of the enhanced spot to one of the depleted regions suggests the presence of non-axisymmetric magnetic field lines. (author)

Synthesis and characterization of large WO{sub 3} sheets synthesized by resistive heating method

Energy Technology Data Exchange (ETDEWEB)

Filippo, Emanuela, E-mail: emanuela.filippo@unisalento.it [Department of Engineering for Innovation, University of Salento, Monteroni Street, Lecce I-73100 Italy (Italy); Tepore, Marco [Department of Engineering for Innovation, University of Salento, Monteroni Street, Lecce I-73100 Italy (Italy); Baldassarre, Francesca [Department of Cultural Heritage, University of Salento, Lecce I-73100 Italy (Italy); Quarta, Gianluca; Calcagnile, Lucio [Department of Engineering for Innovation, University of Salento, Monteroni Street, Lecce I-73100 Italy (Italy); Guascito, Maria Rachele [DiSTeBA, University of Salento, Lecce I-73100 Italy (Italy); Tepore, Antonio [Department of Cultural Heritage, University of Salento, Lecce I-73100 Italy (Italy)

2015-09-01

A simple, low-cost method is presented to grow tungsten oxide large sheets simply by resistively heating a pure tungsten filament under air/water vapor flow. The obtained structures were studied using scanning and transmission electron microscopy, selected area diffraction, X Ray diffraction, Raman and X-ray photoelectron spectroscopy, photoluminescence and zeta potential measurements. SEM observations revealed that sheets formed by broadening of the wires/belts over longer growth period. Photoluminescence measurements showed that tungsten oxide sheets had an intense visible emission band. - Highlights: • WO{sub 3} large sheets were prepared by resistively heating a W filament. • WO{sub 3} sheets were carefully characterized. • Formation mechanism of sheets was studied. • WO{sub 3} sheets had an intense visible emission band at 462 nm.

Superacid Passivation of Crystalline Silicon Surfaces.

Science.gov (United States)

Bullock, James; Kiriya, Daisuke; Grant, Nicholas; Azcatl, Angelica; Hettick, Mark; Kho, Teng; Phang, Pheng; Sio, Hang C; Yan, Di; Macdonald, Daniel; Quevedo-Lopez, Manuel A; Wallace, Robert M; Cuevas, Andres; Javey, Ali

2016-09-14

The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the surface. We show that this treatment leads to a significant enhancement in optoelectronic properties of the silicon wafer, attaining a level of surface passivation in line with state-of-the-art dielectric passivation films. Finally, we demonstrate its advantage as a bulk lifetime and process cleanliness monitor, establishing its compatibility with large area photoluminescence imaging in the process.

Drug delivery via porous silicon: a focused patent review.

Science.gov (United States)

Kulyavtsev, Paulina A; Spencer, Roxanne P

2017-03-01

Although silicon is more commonly associated with computer chips than with drug delivery, with the discovery that porous silicon is a viable biocompatible material, mesoporous silicon with pores between 2 and 50 nm has been loaded with small molecule and biomolecule therapeutics and safely implanted for controlled release. As porous silicon is readily oxidized, porous silica must also be considered for drug delivery applications. Since 2010, only a limited number of US patents have been granted, primarily for ophthalmologic and immunotherapy applications, in contrast to the growing body of technical literature in this area.

Towards an assessment of the balance state of the Greenland Ice Sheet

Energy Technology Data Exchange (ETDEWEB)

Boeggild, C.E.; Mayer, C.; Podlech, S.; Taurisano, A.; Nielsen, S.

2004-07-01

The climate of Europe is strongly influenced by heat transport by ocean currents flowing from equatorial regions towards the Arctic. During recent years, research has been increasingly focused on factors affecting this circulation, e.g. the freshwater budget of the Arctic that is influenced by glacial melt water from north and East Greenland outlet glaciers. Furthermore, the climate is affected by snow cover, which, apart from its contribution to the freshwater budget, provides feedback effects in that it reflects most of the solar radiation. Apart from Arctic sea-ice cover, the Greenland Ice Sheet is the largest permanent ice- and snow-covered area in the northern hemisphere, with an area of 1.67 x 10{sup 6} km{sup 2} and by far the largest storage of ice with a volume of 2.93 x 10{sup 6} km{sup 3}. Most of the mass loss from the Greenland Ice Sheet occurs in the marginal region of the ice sheet, which is also the area where the largest changes in albedo occur. The Geological Survey of Denmark and Greenland (GEUS) has for many years carried out research along the Greenland Ice Sheet margin to monitor changes of mass balance and melt conditions. (BA)

Solar Cels With Reduced Contact Areas

Science.gov (United States)

Daud, T.; Crotty, G. T.; Kachare, A. H.; Lewis, J. T.

1987-01-01

Efficiency of silicon solar cells increased about 20 percent using smaller metal-contact area on silicon at front and back of each cell. Reduction in contact area reduces surface recombination velocity under contact and thus reduces reverse saturation current and increases opencircuit voltage..

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

Science.gov (United States)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

Innovative technologies for emitter formation of crystalline silicon solar cells using in-line diffusion; Innovative Technologien zur Emittererzeugung fuer kristalline Silizium-Solarzellen mittels Durchlaufdiffusion

Energy Technology Data Exchange (ETDEWEB)

Voyer, Catherine

2009-04-20

, and thus the PSG thickness and the emitter essentially follow the surface texture, as seen on SEM pictures. Through dehydration of the phosphorus molecules and reaction with silicon, the layer turns into a PSG. This process produces a vapour which contains water and phosphorus compounds. A steeper heat-up curve or a higher vapour pressure leads to a thicker PSG. In this work, a high PSG thickness homogeneity was obtained through adjustment of the air supply in the furnace entrance area. It was furthermore shown that under the condition of a steep heat-up curve, the PSG formation is only completed at temperatures above 700 C. The influence of the furnace transport speed and plateau temperature and of the spray nozzle flow rate on the emitter doping profile was examined. A lower speed or a higher temperature resulted in a lower sheet resistance. Moreover, the emitter phosphorus surface concentration was increased or reduced through, respectively, an increase or a reduction of the spray nozzle flow rate. The dependence of sheet resistance on PSG thickness was found to show a non-monotonous behaviour: Sheet resistance first decreased with increasing PSG thickness, reached a minimum and then increased. The reduction is explained by the increasing amount of phosphorus available for diffusion into silicon. The increase is assumed to be due to the longer time and greater energy requirement for PSG formation from a thicker dopant source layer, which leads to a weaker phosphorus diffusion into silicon in the first zones of the furnace. A high homogeneity of sheet resistance was obtained, for example a relative standard deviation of 2.5% on a textured surface. Standard screen-printed Cz-Si solar cells were made which had high values of open-circuit voltage of up to 626 mV, of short-circuit current of up to 36 mA/cm{sup 2} and of efficiency of up to 17.5%. In addition, the doping profile was varied. Textured solar cells with in-line diffusion achieved an efficiency of up to 16

Combined analyses of ion beam synthesized layers in porous silicon

International Nuclear Information System (INIS)

Ramos, A.R.; Silva, M.F. da; Silva, M.R. da; Soares, J.C.; Paszti, F.; Horvath, Z.E.; Vazsonyi, E.; Conde, O.

2001-01-01

High dose ion implantation was used to form polycrystalline silicide films on porous silicon with different native concentrations of light impurities (C and O). Porous silicon layers several μm thick were implanted with 170 KeV Cr + ions to fluences of 3x10'1 7 ions/cm 2 both at room temperature and 450 o C. Similar samples were implanted with 100 keV Co + ions to fluences of 2x10 17 ions/cm 2 at room temperature and 350 o C and 450 o C. The formed silicide compounds were studied by Rutherford backscattering spectrometry, elastic recoil detection, glancing incidence X-ray diffraction, and four point-probe sheet resistance measurements. Selected Co implanted samples were analysed by cross-section transmission electron microscopy. Results show that the light impurities were partially expelled from the forming silicide layer. Combining cross-section transmission electron microscopy with ion beam methods it was possible to show that, in the implanted region, the porous structure collapses and densities during implantation, but the underlying porous silicon remains intact. The layer structure as well as the quality and type of the formed silicide, were found to depend on the original impurity level, implantation temperature, and annealing. (author)

A Mechanochemical Approach to Porous Silicon Nanoparticles Fabrication

Directory of Open Access Journals (Sweden)

Luca De Stefano

2011-06-01

Full Text Available Porous silicon samples have been reduced in nanometric particles by a well known industrial mechanical process, the ball grinding in a planetary mill; the process has been extended to crystalline silicon for comparison purposes. The silicon nanoparticles have been studied by X-ray diffraction, infrared spectroscopy, gas porosimetry and transmission electron microscopy. We have estimated crystallites size from about 50 nm for silicon to 12 nm for porous silicon. The specific surface area of the powders analyzed ranges between 100 m2/g to 29 m2/g depending on the milling time, ranging from 1 to 20 h. Electron microscopy confirms the nanometric size of the particles and reveals a porous structure in the powders obtained by porous silicon samples which has been preserved by the fabrication conditions. Chemical functionalization during the milling process by a siloxane compound has also been demonstrated.

Relation between current sheets and vortex sheets in stationary incompressible MHD

Directory of Open Access Journals (Sweden)

D. H. Nickeler

2012-03-01

Full Text Available Magnetohydrodynamic configurations with strong localized current concentrations and vortices play an important role in the dissipation of energy in space and astrophysical plasma. Within this work we investigate the relation between current sheets and vortex sheets in incompressible, stationary equilibria. For this approach it is helpful that the similar mathematical structure of magnetohydrostatics and stationary incompressible hydrodynamics allows us to transform static equilibria into stationary ones. The main control function for such a transformation is the profile of the Alfvén-Mach number MA, which is always constant along magnetic field lines, but can change from one field line to another. In the case of a global constant MA, vortices and electric current concentrations are parallel. More interesting is the nonlinear case, where MA varies perpendicular to the field lines. This is a typical situation at boundary layers like the magnetopause, heliopause, the solar wind flowing around helmet streamers and at the boundary of solar coronal holes. The corresponding current and vortex sheets show in some cases also an alignment, but not in every case. For special density distributions in 2-D, it is possible to have current but no vortex sheets. In 2-D, vortex sheets of field aligned-flows can also exist without strong current sheets, taking the limit of small Alfvén Mach numbers into account. The current sheet can vanish if the Alfvén Mach number is (almost constant and the density gradient is large across some boundary layer. It should be emphasized that the used theory is not only valid for small Alfvén Mach numbers MA MA ≲ 1. Connection to other theoretical approaches and observations and physical effects in space plasmas are presented. Differences in the various aspects of theoretical investigations of current sheets and vortex sheets are given.

Optimization of performance parameters for large area silicon photomultipliers for use in the GlueX experiment

Science.gov (United States)

Janzen, Kathryn Louise

Largely because of their resistance to magnetic fields, silicon photomultipliers (SiPMs) are being considered as the readout for the GlueX Barrel Calorimeter, a key component of the GlueX detector located immediately inside a 2.2 T superconducting solenoid. SiPMs with active area 1 x 1 mm2 have been investigated for use in other experiments, but detectors with larger active areas are required for the GlueX BCAL. This puts the GlueX collaboration in the unique position of being pioneers in the use of this frontend detection revolution by driving the technology for larger area sensors. SensL, a photonics research and development company in Ireland, has been collaborating with the University of Regina GlueX group to develop prototype large area SiPMs comprising 16 - 3x3 mm2 cells assembled in a close-packed matrix. Performance parameters of individual SensL 1x1 mm2 and 3x3 mm2 SiPMs along with prototype SensL SiPM arrays are tested, including current versus voltage characteristics, photon detection efficiency, and gain uniformity, in an effort to determine the suitability of these detectors to the GlueX BCAL readout.

Porous silicon nanoparticles for target drag delivery: structure and morphology

International Nuclear Information System (INIS)

Spivak, Yu M; Belorus, A O; Somov, P A; Bespalova, K A; Moshnikov, V A; Tulenin, S S

2015-01-01

Nanoparticles of porous silicon were obtained by electrochemical anodic etching. Morphology and structure of the particles was investigated by means dynamic light scattering and scanning electron microscopy. The influence of technological conditions of preparation on geometrical parameters of the porous silicon particles (particle size distribution, pore shape and size, the specific surface area of the porous silicon) is discussed. (paper)

Femtosecond laser irradiation-induced infrared absorption on silicon surfaces

Directory of Open Access Journals (Sweden)

Qinghua Zhu

2015-04-01

Full Text Available The near-infrared (NIR absorption below band gap energy of crystalline silicon is significantly increased after the silicon is irradiated with femtosecond laser pulses at a simple experimental condition. The absorption increase in the NIR range primarily depends on the femtosecond laser pulse energy, pulse number, and pulse duration. The Raman spectroscopy analysis shows that after the laser irradiation, the silicon surface consists of silicon nanostructure and amorphous silicon. The femtosecond laser irradiation leads to the formation of a composite of nanocrystalline, amorphous, and the crystal silicon substrate surface with microstructures. The composite has an optical absorption enhancement at visible wavelengths as well as at NIR wavelength. The composite may be useful for an NIR detector, for example, for gas sensing because of its large surface area.

An ice sheet model validation framework for the Greenland ice sheet

Science.gov (United States)

Price, Stephen F.; Hoffman, Matthew J.; Bonin, Jennifer A.; Howat, Ian M.; Neumann, Thomas; Saba, Jack; Tezaur, Irina; Guerber, Jeffrey; Chambers, Don P.; Evans, Katherine J.; Kennedy, Joseph H.; Lenaerts, Jan; Lipscomb, William H.; Perego, Mauro; Salinger, Andrew G.; Tuminaro, Raymond S.; van den Broeke, Michiel R.; Nowicki, Sophie M. J.

2017-01-01

We propose a new ice sheet model validation framework - the Cryospheric Model Comparison Tool (CmCt) - that takes advantage of ice sheet altimetry and gravimetry observations collected over the past several decades and is applied here to modeling of the Greenland ice sheet. We use realistic simulations performed with the Community Ice Sheet Model (CISM) along with two idealized, non-dynamic models to demonstrate the framework and its use. Dynamic simulations with CISM are forced from 1991 to 2013, using combinations of reanalysis-based surface mass balance and observations of outlet glacier flux change. We propose and demonstrate qualitative and quantitative metrics for use in evaluating the different model simulations against the observations. We find that the altimetry observations used here are largely ambiguous in terms of their ability to distinguish one simulation from another. Based on basin-scale and whole-ice-sheet-scale metrics, we find that simulations using both idealized conceptual models and dynamic, numerical models provide an equally reasonable representation of the ice sheet surface (mean elevation differences of framework demonstrates that our proposed metrics can distinguish relatively better from relatively worse simulations and that dynamic ice sheet models, when appropriately initialized and forced with the right boundary conditions, demonstrate a predictive skill with respect to observed dynamic changes that have occurred on Greenland over the past few decades. An extensible design will allow for continued use of the CmCt as future altimetry, gravimetry, and other remotely sensed data become available for use in ice sheet model validation.

Large area sheet task: Advanced dendritic web growth development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Meier, D.; Schruben, J.

1981-01-01

The growth of silicon dendritic web for photovoltaic applications was investigated. The application of a thermal model for calculating buckling stresses as a function of temperature profile in the web is discussed. Lid and shield concepts were evaluated to provide the data base for enhancing growth velocity. An experimental web growth machine which embodies in one unit the mechanical and electronic features developed in previous work was developed. In addition, evaluation of a melt level control system was begun, along with preliminary tests of an elongated crucible design. The economic analysis was also updated to incorporate some minor cost changes. The initial applications of the thermal model to a specific configuration gave results consistent with experimental observation in terms of the initiation of buckling vs. width for a given crystal thickness.

Photonic Crystal Sensors Based on Porous Silicon

Directory of Open Access Journals (Sweden)

Claudia Pacholski

2013-04-01

Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

Photonic Crystal Sensors Based on Porous Silicon

Science.gov (United States)

Pacholski, Claudia

2013-01-01

Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

Effects of Cold Rolling Reduction and Initial Goss Grains Orientation on Texture Evolution and Magnetic Performance of Ultra-thin Grain-oriented Silicon Steel

Directory of Open Access Journals (Sweden)

LIANG Rui-yang

2017-06-01

Full Text Available The ultra-thin grain-oriented silicon steel strips with a thickness of 0.06-0.12mm were produced by one-step-rolling methods with different Goss-orientation of grain-oriented silicon steel sheets. The effect of cold rolling reduction and initial Goss-orientation of samples on texture evolution and magnetic performance of ultra-thin grain-oriented silicon steel strips was studied by EBSD. The result shows that with the increase of cold rolling reduction and decrease of strips thickness, the recrystallization texture is enhanced after annealing.When the cold rolling reduction is 70%,RD//〈001〉 recrystallization texture is the sharpest, and the magnetic performance is the best. The higher degree of Goss orientation in initial sample is, the better magnetic performance of ultra-thin grain-oriented silicon steel.Therefore, for producing an ultra-thin grain-oriented silicon steel with high performance, a material with a concentrated orientation of Goss grains can be used.

24% efficient PERL structure silicon solar cells

International Nuclear Information System (INIS)

Zhao, J.; Wang, A.; Green, M.A.

1990-01-01

This paper reports that the performance of silicon solar cells have been significantly improved using an improved PERL (passivated emitter, rear locally-diffused) cell structure. This structure overcomes deficiencies in an earlier PERC (passivated emitter and rear cell) cell structure by locally diffusing boron into contact areas at the rear of the cells. Terrestrial energy conversion efficiencies up to 24% are reported for silicon cells for the first time. Air Mass O efficiencies approach 21%. The first batches of concentrator cells using the new structure have demonstrated significant improvement with 29% efficient concentrator silicon cells expected in the near future

N-type polycrystalline silicon films formed on alumina by aluminium induced crystallization and overdoping

Energy Technology Data Exchange (ETDEWEB)

Tuezuen, O. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France)], E-mail: Ozge.Tuzun@iness.c-strasbourg.fr; Slaoui, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Gordon, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Focsa, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Ballutaud, D. [GEMaC-UMR 8635 CNRS, 1 place Aristide Briand, F-92195 Meudon (France); Beaucarne, G.; Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

2008-08-30

In this work, we investigated the formation of n-type polysilicon films on alumina substrates by overdoping a p-type silicon layer obtained by aluminium induced crystallization of amorphous silicon (AIC), and subsequent epitaxy. The phosphorus doping of the AIC was carried out by thermal diffusion from a solid source. The structural quality of the n-type Si film was monitored by optical microscope and scanning electron microscope (SEM). The doping efficiency was determined by resistivity measurements and secondary ion mass spectroscopy (SIMS). The sheet resitivity changed from 2700{omega}/sq to 19.6{omega}/sq after thermal diffusion at 950 deg. C for 1h, indicating the overdoping effect. The SIMS profile carried out after the high temperature epitaxy exhibits a two steps phosphorus distribution, indicating the formation of an n{sup +}n structure.

Damage-free laser patterning of silicon nitride on textured crystalline silicon using an amorphous silicon etch mask for Ni/Cu plated silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Bailly, Mark S., E-mail: mbailly@asu.edu; Karas, Joseph; Jain, Harsh; Dauksher, William J.; Bowden, Stuart

2016-08-01

We investigate the optimization of laser ablation with a femtosecond laser for direct and indirect removal of SiN{sub x} on alkaline textured c-Si. Our proposed resist-free indirect removal process uses an a-Si:H etch mask and is demonstrated to have a drastically improved surface quality of the laser processed areas when compared to our direct removal process. Scanning electron microscope images of ablated sites show the existence of substantial surface defects for the standard direct removal process, and the reduction of those defects with our proposed process. Opening of SiN{sub x} and SiO{sub x} passivating layers with laser ablation is a promising alternative to the standard screen print and fire process for making contact to Si solar cells. The potential for small contacts from laser openings of dielectrics coupled with the selective deposition of metal from light induced plating allows for high-aspect-ratio metal contacts for front grid metallization. The minimization of defects generated in this process would serve to enhance the performance of the device and provides the motivation for our work. - Highlights: • Direct laser removal of silicon nitride (SiN{sub x}) damages textured silicon. • Direct laser removal of amorphous silicon (a-Si) does not damage textured silicon. • a-Si can be used as a laser patterned etch mask for SiN{sub x}. • Chemically patterned SiN{sub x} sites allow for Ni/Cu plating.

Health risk among asbestos cement sheet manufacturing workers in Thailand.

Science.gov (United States)

Phanprasit, Wantanee; Sujirarat, Dusit; Chaikittiporn, Chalermchai

2009-12-01

To assess asbestos exposure and calculate the relative risks of lung cancer among asbestos cement roof sheet workers and to predict the incidence rate of lung cancer caused by asbestos in Thailand. A cross-sectional study was conducted in four asbestos cement roof factories. Both area and personal air samples were collected and analyzed employing NIOSH method # 7400 and counting rule A for all procesess and activities. The time weight average exposures were calculated for each studied task using average area concentrations of the mill and personal concentrations. Then, cumulative exposures were estimated based on the past nation-wide air sampling concentrations and those from the present study. The relative risk (RR) of lung cancer among asbestos cement sheet workers was calculated and the number of asbestos related lung cancer case was estimated. The roof fitting polishers had the highest exposure to airborne asbestos fiber (0.73 fiber/ml). The highest average area concentration was at the conveyor to the de-bagger areas (0.02 fiber/ml). The estimated cumulative exposure for the workers performed studied-tasks ranged in between 90.13-115.65 fiber-years/ml while the relative risk of lung cancer calculated using US. EPA's model were 5.37-5.96. Based on the obtained RR, lung cancer among AC sheet in Thailand would be 2 case/year. In case that AC sheet will not be prohibited from being manufactured, even though only chrysotile is allowed, the surveillance system should be further developed and more seriously implemented. The better control measures for all processes must be implemented. Furthermore, due to the environmental persistence of asbestos fiber, its life cycle analysis should be conducted in order to control environmental exposure of general population.

Crystallite Size Effect on Thermal Conductive Properties of Nonwoven Nanocellulose Sheets.

Science.gov (United States)

Uetani, Kojiro; Okada, Takumi; Oyama, Hideko T

2015-07-13

The thermal conductive properties, including the thermal diffusivity and resultant thermal conductivity, of nonwoven nanocellulose sheets were investigated by separately measuring the thermal diffusivity of the sheets in the in-plane and thickness directions with a periodic heating method. The cross-sectional area (or width) of the cellulose crystallites was the main determinant of the thermal conductive properties. Thus, the results strongly indicate that there is a crystallite size effect on phonon conduction within the nanocellulose sheets. The results also indicated that there is a large interfacial thermal resistance between the nanocellulose surfaces. The phonon propagation velocity (i.e., the sound velocity) within the nanocellulose sheets was estimated to be ∼800 m/s based on the relationship between the thermal diffusivities and crystallite widths. The resulting in-plane thermal conductivity of the tunicate nanocellulose sheet was calculated to be ∼2.5 W/mK, markedly higher than other plastic films available for flexible electronic devices.

Material Properties of Laser-Welded Thin Silicon Foils

Directory of Open Access Journals (Sweden)

M. T. Hessmann

2013-01-01

Full Text Available An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1 laser spot welding with low constant feed speed, (2 laser line welding, and (3 keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

Wettability Investigations and Wet Transfer Enhancement of Large-Area CVD-Graphene on Aluminum Nitride.

Science.gov (United States)

Knapp, Marius; Hoffmann, René; Cimalla, Volker; Ambacher, Oliver

2017-08-18

The two-dimensional and virtually massless character of graphene attracts great interest for radio frequency devices, such as surface and bulk acoustic wave resonators. Due to its good electric conductivity, graphene might be an alternative as a virtually massless electrode by improving resonator performance regarding mass-loading effects . We report on an optimization of the commonly used wet transfer technique for large-area graphene, grown via chemical vapor deposition, onto aluminum nitride (AlN), which is mainly used as an active, piezoelectric material for acoustic devices. Today, graphene wet transfer is well-engineered for silicon dioxide (SiO₂). Investigations on AlN substrates reveal highly different surface properties compared to SiO₂ regarding wettability, which strongly influences the quality of transferred graphene monolayers. Both physical and chemical effects of a plasma treatment of AlN surfaces change wettability and avoid large-scale cracks in the transferred graphene sheet during desiccation. Spatially-resolved Raman spectroscopy reveals a strong strain and doping dependence on AlN plasma pretreatments correlating with the electrical conductivity of graphene. In our work, we achieved transferred crack-free large-area (40 × 40 mm²) graphene monolayers with sheet resistances down to 350 Ω/sq. These achievements make graphene more powerful as an eco-friendly and cheaper replacement for conventional electrode materials used in radio frequency resonator devices.

Large Area Thin Film Silicon: Synergy between Displays and Solar Cells

NARCIS (Netherlands)

Schropp, R.E.I.

2012-01-01

Thin-film silicon technology has changed our society, owing to the rapid advance of its two major application fields in communication (thin-film displays) and sustainable energy (thin-film solar cells). Throughout its development, advances in these application fields have always benefitted each

Chlamydia - CDC Fact Sheet

Science.gov (United States)

... Archive STDs Home Page Bacterial Vaginosis (BV) Chlamydia Gonorrhea Genital Herpes Hepatitis HIV/AIDS & STDs Human Papillomavirus ( ... sheet Pelvic Inflammatory Disease (PID) – CDC fact sheet Gonorrhea – CDC fact sheet STDs Home Page Bacterial Vaginosis ( ...

Undepleted silicon detectors

International Nuclear Information System (INIS)

Rancoita, P.G.; Seidman, A.

1985-01-01

Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

Characterization of microstructure, texture and magnetic properties in twin-roll casting high silicon non-oriented electrical steel

Energy Technology Data Exchange (ETDEWEB)

Li, Hao-Ze; Liu, Hai-Tao, E-mail: liuht@ral.neu.edu.cn; Liu, Zhen-Yu, E-mail: zyliu@mail.neu.edu.cn; Lu, Hui-Hu; Song, Hong-Yu; Wang, Guo-Dong

2014-02-15

An Fe-6.5 wt.% Si-0.3 wt.% Al as-cast sheet was produced by twin-roll strip casting process, then treated with hot rolling, warm rolling and annealing. A detailed study of the microstructure and texture evolution at different processing stages was carried out by optical microscopy, X-ray diffraction and electron backscattered diffraction analysis. The initial as-cast strip showed strong columnar grains and pronounced < 001 >//ND texture. The hot rolled and warm rolled sheets were characterized by large amounts of shear bands distributed through the thickness together with strong < 110 >//RD texture and weak < 111 >//ND texture. After annealing, detrimental < 111 >//ND texture almost disappeared while beneficial (001)<210 >, (001)<010 >, (115)<5 − 10 1 > and (410) < 001 > recrystallization textures were formed, thus the magnetic induction of the annealed sheet was significantly improved. The recrystallization texture in the present study could be explained by preferred nucleation and grain growth mechanism. - Highlights: • A high silicon as-cast strip with columnar structure was produced. • A thin warm rolled sheet without large edge cracks was obtained. • Microstructure and texture evolution at each stage were investigated. • Beneficial (001)<210 >, (001)<010 >, (410)<001 > recrystallization textures were formed. • The magnetic induction of annealed sheet was significantly improved.

Development of microstructure and texture in strip casting grain oriented silicon steel

Energy Technology Data Exchange (ETDEWEB)

Wang, Yang; Xu, Yun-Bo, E-mail: yunbo_xu@126.com; Zhang, Yuan-Xiang; Fang, Feng; Lu, Xiang; Liu, Hai-Tao; Wang, Guo-Dong

2015-04-01

Grain oriented silicon steel was produced by strip casting and two-stage cold rolling processes. The development of microstructure and texture was investigated by using optical microscopy, X-ray diffraction and electron backscattered diffraction. It is shown that the microstructure and texture evolutions of strip casting grain oriented silicon steel are significantly distinct from those in the conventional processing route. The as-cast strip is composed of coarse solidification grains and characterized by pronounced 〈001〉//ND texture together with very weak Goss texture. The initial coarse microstructure enhances {111} shear bands formation during the first cold rolling and then leads to the homogeneously distributed Goss grains through the thickness of intermediate annealed sheet. After the secondary cold rolling and primary annealing, strong γ fiber texture with a peak at {111}〈112〉 dominates the primary recrystallization texture, which is beneficial to the abnormal growth of Goss grain during the subsequent high temperature annealing. Therefore, the secondary recrystallization of Goss orientation evolves completely after the high temperature annealing and the grain oriented silicon steel with a good magnetic properties (B{sub 8}=1.94 T, P{sub 1.7/50}=1.3 W/kg) can be prepared. - Highlights: • Grain oriented silicon steel was developed by a novel ultra-short process. • Many evenly distributed Goss “seeds” were originated from cold rolled shear bands. • More MnS inhibitors were obtained due to the rapid cooling of strip casing. • The magnetic induction of grain oriented silicon steel was significantly improved.

Silicon-based metallic micro grid for electron field emission

International Nuclear Information System (INIS)

Kim, Jaehong; Jeon, Seok-Gy; Kim, Jung-Il; Kim, Geun-Ju; Heo, Duchang; Shin, Dong Hoon; Sun, Yuning; Lee, Cheol Jin

2012-01-01

A micro-scale metal grid based on a silicon frame for application to electron field emission devices is introduced and experimentally demonstrated. A silicon lattice containing aperture holes with an area of 80 × 80 µm 2 and a thickness of 10 µm is precisely manufactured by dry etching the silicon on one side of a double-polished silicon wafer and by wet etching the opposite side. Because a silicon lattice is more rigid than a pure metal lattice, a thin layer of Au/Ti deposited on the silicon lattice for voltage application can be more resistant to the geometric stress caused by the applied electric field. The micro-fabrication process, the images of the fabricated grid with 88% geometric transparency and the surface profile measurement after thermal feasibility testing up to 700 °C are presented. (paper)

Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

Directory of Open Access Journals (Sweden)

Luis G. Gerling

2015-10-01

Full Text Available During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3 with high work functions (>5 eV were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3−x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~109 Ω/sq, although lower values (~104 Ω/sq were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV and conversion efficiency (12.7%, followed by MoO3 (581 mV, 12.6% and WO3 (570 mV, 11.8%. A short-circuit current gain of ~0.5 mA/cm2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants.

Microcapillary Features in Silicon Alloyed High-Strength Cast Iron

Directory of Open Access Journals (Sweden)

R.K. Hasanli

2017-04-01

Full Text Available Present study explores features of silicon micro capillary in alloyed high-strength cast iron with nodular graphite (ductile iron produced in metal molds. It identified the nature and mechanism of micro liquation of silicon in a ductile iron alloyed with Nickel and copper, and demonstrated significant change of structural-quality characteristics. It was concluded that the matrix of alloyed ductile iron has a heterogeneous structure with cross reinforcement and high-silicon excrement areas.

Dynamics of fluid lines, sheets, filaments and membranes

International Nuclear Information System (INIS)

Coutris, N.

1988-01-01

We establish the dynamic equations of two types of fluid structures: 1) lines-filaments and 2) sheets-membranes. In the first part, we consider one-dimensional (line) and two-dimensional (sheet) fluid structures. The second part concerns the associated three- dimensional structures: filaments and membranes. In the third part, we establish the equations for thickened lines and thickened sheets. For that purpose, we introduce a thickness in the models of the first part. The fourth part concerns the thinning of the filament and the membrane. Then, by an asymptotic process, we deduce the corresponding equations from the equations of the second part in order to show the purely formal equivalence of the equations of the third and fourth parts. To obtain the equations, we make use of theorems whose proofs can be found in the appendices. The equations can be applied to many areas of interest: instabilities of liquid jets and liquid films, modelisation of interfaces between two different fluids as sheets or membranes, modelisation with the averaged equations over a cross section of single phase flows and two-phase flows in channels with a nonrectilinear axis such as bends or pump casings [fr

Silicon sensor probing and radiation studies for the LHCb silicon tracker

International Nuclear Information System (INIS)

Lois, Cristina

2006-01-01

The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

Severnaya Zemlya, arctic Russia: a nucleation area for Kara Sea ice sheets during the Middle to Late Quaternary

DEFF Research Database (Denmark)

Möller, Per; Lubinski, David J.; Ingólfsson, Ólafur

2006-01-01

Quaternary glacial stratigraphy and relative sea-level changes reveal at least four expansions of the Kara Sea ice sheet over the Severnaya Zemlya Archipelago at 79°N in the Russian Arctic, as indicated from tills interbedded with marine sediments, exposed in stratigraphic superposition, and from...... of a large Kara Sea ice sheet, with exception of the Last Glacial Maximum (MIS 2), when Kara Sea ice did not impact Severnaya Zemlya and barely graced northernmost Taymyr Peninsula.......Quaternary glacial stratigraphy and relative sea-level changes reveal at least four expansions of the Kara Sea ice sheet over the Severnaya Zemlya Archipelago at 79°N in the Russian Arctic, as indicated from tills interbedded with marine sediments, exposed in stratigraphic superposition, and from......-5e and MIS 5d-3. The MIS 6-5e event, associated with the high marine limit, implies ice-sheet thickness of >2000 m only 200 km from the deep Arctic Ocean, consistent with published evidence of ice grounding at ~1000 m water depth in the central Arctic Ocean. Till fabrics and glacial tectonics record...

Closure Report (CR) for Corrective Action Unit (CAU) 91: Area 3 U-3fi Injection Well with Errata Sheet and Certification, Revision 0

Energy Technology Data Exchange (ETDEWEB)

Navarro Nevada Environmental Services

2010-08-10

The closure report for CAU 91 has no Use Restriction Form or drawing/map included in the document to describe the use restricted area, however, Section 3.3.3 states that the site will be fenced and signage placed indicating the area as a Resource Conservation and Recovery Act (RCRA) Unit. The drawing that was placed in the FFACO indicating the use restricted area lists the coordinates for the RCRA Unit in Nevada State Plan Coordinates - North American Datum of 1983. In the ensuing years the reporting of coordinates has been standardized so that all coordinates are reported in the same manner, which is: NAD 27 UTM Zone 11 N, meters. This Errata Sheet updates the coordinate reporting to the currently accepted method and includes an aerial photo showing the RCRA Unit with the coordinates listed showing the use restricted area.

Laminin-521 Promotes Rat Bone Marrow Mesenchymal Stem Cell Sheet Formation on Light-Induced Cell Sheet Technology

Directory of Open Access Journals (Sweden)

Zhiwei Jiang

2017-01-01

Full Text Available Rat bone marrow mesenchymal stem cell sheets (rBMSC sheets are attractive for cell-based tissue engineering. However, methods of culturing rBMSC sheets are critically limited. In order to obtain intact rBMSC sheets, a light-induced cell sheet method was used in this study. TiO2 nanodot films were coated with (TL or without (TN laminin-521. We investigated the effects of laminin-521 on rBMSCs during cell sheet culturing. The fabricated rBMSC sheets were subsequently assessed to study cell sheet viability, reattachment ability, cell sheet thickness, collagen type I deposition, and multilineage potential. The results showed that laminin-521 could promote the formation of rBMSC sheets with good viability under hyperconfluent conditions. Cell sheet thickness increased from an initial 26.7 ± 1.5 μm (day 5 up to 47.7 ± 3.0 μm (day 10. Moreover, rBMSC sheets maintained their potential of osteogenic, adipogenic, and chondrogenic differentiation. This study provides a new strategy to obtain rBMSC sheets using light-induced cell sheet technology.

The status of silicon ribbon growth technology for high-efficiency silicon solar cells

Science.gov (United States)

Ciszek, T. F.

1985-01-01

More than a dozen methods have been applied to the growth of silicon ribbons, beginning as early as 1963. The ribbon geometry has been particularly intriguing for photovoltaic applications, because it might provide large area, damage free, nearly continuous substrates without the material loss or cost of ingot wafering. In general, the efficiency of silicon ribbon solar cells has been lower than that of ingot cells. The status of some ribbon growth techniques that have achieved laboratory efficiencies greater than 13.5% are reviewed, i.e., edge-defined, film-fed growth (EFG), edge-supported pulling (ESP), ribbon against a drop (RAD), and dendritic web growth (web).

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Limited Impact of Subglacial Supercooling Freeze-on for Greenland Ice Sheet Stratigraphy

Science.gov (United States)

Dow, Christine F.; Karlsson, Nanna B.; Werder, Mauro A.

2018-02-01

Large units of disrupted radiostratigraphy (UDR) are visible in many radio-echo sounding data sets from the Greenland Ice Sheet. This study investigates whether supercooling freeze-on rates at the bed can cause the observed UDR. We use a subglacial hydrology model to calculate both freezing and melting rates at the base of the ice sheet in a distributed sheet and within basal channels. We find that while supercooling freeze-on is a phenomenon that occurs in many areas of the ice sheet, there is no discernible correlation with the occurrence of UDR. The supercooling freeze-on rates are so low that it would require tens of thousands of years with minimal downstream ice motion to form the hundreds of meters of disrupted radiostratigraphy. Overall, the melt rates at the base of the ice sheet greatly overwhelm the freeze-on rates, which has implications for mass balance calculations of Greenland ice.

Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells

Science.gov (United States)

Zhang, S. J.; Lin, S. S.; Li, X. Q.; Liu, X. Y.; Wu, H. A.; Xu, W. L.; Wang, P.; Wu, Z. Q.; Zhong, H. K.; Xu, Z. J.

2015-12-01

Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron spectroscopy, was 0.13-0.25 eV larger than that of graphene. Moreover, when compared with the graphene/GaAs heterostructure, SiG/GaAs exhibits an enhanced performance. The performance of 3.4% silicon doped SiG/GaAs solar cell has been improved by 33.7% on average, which was attributed to the increased barrier height and improved interface quality. Our results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron

Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of technologies to manufacture applied type thin film solar cells with new structure and development of high-efficiency hybrid thin film/sheet solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (oyogata shin kozo usumaku taiyo denchi no seizo gijutsu kaihatsu (kokoritsu hybrid gata usumaku / sheet taiyo denchi no seizo gijutsu kaihatsu))

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

With an objective to develop low-cost and high-efficiency hybrid thin film/sheet solar cells, research and development has been performed. This paper summarizes the achievements in fiscal 1999. The research is related to a hybrid construction, in which the upper cells of amorphous silicon thin film are formed on the lower cells bonded with micro-crystalline silicon thin film relative to a poly-crystalline silicon sheet. In the technology to form the upper cells, a pin-construction using amorphous silicon thin film made by using the plasma CVD process was adopted, whereas an open circuit voltage of 1.45V, a short circuit current of 13.6 mA/cm{sup 2}, and a conversion efficiency of 13.5% were obtained. In the technology to form the substrate for the lower cells, formation of flat silicon thin plate that can be peeled off was identified as a result of adopting the construction in which a graphite substrate is provided on a rotating cooling body of 12-prism type. With regard to the technology to bond and form the lower cells, electrical properties of hetero-bonded cells were discussed, and an open circuit voltage of 0.605V and a conversion efficiency of 14.3% were obtained as a result of enhancing the film quality and optimizing the film thickness. (NEDO)

Photopolymerizable silicone monomers, oligomers, and resins

International Nuclear Information System (INIS)

Jacobine, A.F.; Nakos, S.T.

1992-01-01

The purpose of this chapter is to acquaint the general photopolymer researcher with the historical development of the chemistry and technology of photopolymerizable silicone monomers, fluids, and resins. The current status of research in these areas is assessed. The focus of this chapter is not only on the polymer chemistry and application of this technology, but also on important aspects of the synthetic chemistry involved in the preparation of UV-curable silicone monomers, oligomers, and resins. 236 refs., 6 tabs

Calcinosis Cutis Long after Rhinoplasty with Silicone

Directory of Open Access Journals (Sweden)

Yuki Honda

2014-12-01

Full Text Available Rhinoplasty is a plastic surgery procedure to reconstruct the nose. Silicone alloplastic materials are most widely used as implants for rhinoplasty, but calcification on the surface occurs with long-term usage. Herein, we report a case of gruel-like calcification approximately 50 years after silicone implant rhinoplasty. In this case, calcification on the silicone surface might have transformed into gruel-like deposits, which presented as a subcutaneous mass at the dorsal area of the nose. The precise mechanism is unclear; a pH change in the tissue might have occurred during the process of inflammation, leading to the dissolution of calcified deposits.

Transistors using crystalline silicon devices on glass

Science.gov (United States)

McCarthy, Anthony M.

1995-01-01

A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

Mr. Lorenzo Dellai, presidente della provincia Autonoma di Trento and Professor Andrea Zanotti, president dell'Instituto Trentino di Cultura, visit ALICE experiment underground area and Pixel Silicon Laboratory

CERN Multimedia

Claudia Marcelloni

2006-01-01

Mr. Lorenzo Dellai, presidente della provincia Autonoma di Trento and Professor Andrea Zanotti, president dell'Instituto Trentino di Cultura, visit ALICE experiment underground area and Pixel Silicon Laboratory

Performance of ultra-small silicon photomultiplier array with active area of 0.12 mm×0.12 mm

Energy Technology Data Exchange (ETDEWEB)

Yue, Wang; Zongde, Chen; Chenhui, Li; Ran, He; Shenyuan, Wang; Baicheng, Li; Ruiheng, Wang; Kun, Liang, E-mail: lk@bnu.edu.cn; Ru, Yang; Dejun, Han

2015-07-01

We report the performance of an ultra-small silicon photomultiplier (SiPM) line array with 7 elements of 0.12×0.12 mm{sup 2} in active area, 0.2 mm in pitch and 120 micro cells in one element. The device features an epitaxial bulk quenching resistor concept, demonstrated high geometrical fill factor of 41% and photon detection efficiency (PDE) of 25.4% in the wavelength region between 430 nm and 480 nm while retaining high micro cell density around 10 000 mm{sup −2} and ~3 ns FWHM of dark pulses width; it also demonstrated dark count rate of less than 28.7 kHz, optical crosstalk of the order of 2% to 4%, and excellent photon number discrimination. A 0.15 mm×1.6 mm×1.6 mm lutetium yttrium oxyorthosilicate (LYSO) crystal, corresponding to the width, length and height respectively, was successfully coupled to the 1×7 SiPM array for possible ultra-highly resolved positron emission tomography (PET) applications. This novel type of device has advantages particularly for small active area since the performances, such as PDE and response speed is one of the best among SiPMs with similarly high density of micro cells. It may pave a way for this type of SiPM as a promising pixel position sensitive device in imaging sensor applications. - Highlights: • The ultra-small SiPM line array with active area of 0.12 mm×0.12 mm was presented. • The ultra-small SiPM employs the bulk silicon structure as quenching resistor. • A considerable dynamic range and PDE over 25.4% @ 430 nm to 480 nm were characterized.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Sunlight-thin nanophotonic monocrystalline silicon solar cells

Science.gov (United States)

Depauw, Valérie; Trompoukis, Christos; Massiot, Inès; Chen, Wanghua; Dmitriev, Alexandre; Cabarrocas, Pere Roca i.; Gordon, Ivan; Poortmans, Jef

2017-09-01

Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro- to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

The assembly of the silicon tracker for the GLAST beam test engineering model

International Nuclear Information System (INIS)

Allport, P.; Atwood, E.; Atwood, W.; Beck, G.; Bhatnager, B.; Bloom, E.; Broeder, J.; Chen, V.; Clark, J.; Cotton, N.; Couto e Silva, E. do; Feerick, B.; Giebels, G.; Godfrey, G.; Handa, T.; Hernando, J.A.; Hirayama, M.; Johnson, R.P.; Kamae, T.; Kashiguine, S.; Kroeger, W.; Milbury, C.; Miller, W.; Millican, O.; Nikolaou, M.; Nordby, M.; Ohsugi, T.; Paliaga, G.; Ponslet, E.; Rowe, W.; Sadrozinski, H.F.-W.; Spencer, E.; Stromberg, S.; Swensen, E.; Takayuki, M.; Tournear, D.; Webster, A.; Winkler, G.; Yamamoto, K.; Yamamura, K.; Yoshida, S.

2001-01-01

The silicon tracker for the engineering model of the GLAST Large Area Telescope (LAT) to date represents the largest surface of silicon microstrip detectors assembled in a tracker (2.7 m 2 ). It demonstrates the feasibility of employing this technology for satellite based experiments, in which large effective areas and high reliability are required. This note gives an overview of the assembly of this silicon tracker and discusses in detail studies performed to track quality assurance: leakage current, mechanical alignment and production yields

The development of the market for neutron transmutation doped silicon

International Nuclear Information System (INIS)

Herzer, H.; Vieweg-Gutberlet, G.

1984-01-01

Neutron transmutation doped silicon was introduced to the electronic device market in the 1975-1976 time period. Today, neutron transmutation doping is definitely a mature technology applied mainly to semiconductor power devices. There is no doubt that the power device sector will remain the major consumer of NTD silicon in the near future. This paper examines the possible application of NTD silicon to other areas of the semiconductor market, and concludes that the need for NTD silicon will continue to grow and will expand into other applications. Consequently, unless new reactor capacities become available by the end of the decade, NTD silicon applications will probably be limited mainly to power and sensor devices

Superfund fact sheet: The remedial program. Fact sheet

International Nuclear Information System (INIS)

1992-09-01

The fact sheet describes what various actions the EPA can take to clean up hazardous wastes sites. Explanations of how the criteria for environmental and public health risk assessment are determined and the role of state and local governments in site remediation are given. The fact sheet is one in a series providing reference information about Superfund issues and is intended for readers with no formal scientific training

Nanoscale semiconducting silicon as a nutritional food additive

Energy Technology Data Exchange (ETDEWEB)

Canham, L T [pSiNutria Ltd, Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom)

2007-05-09

Very high surface area silicon powders can be realized by high energy milling or electrochemical etching techniques. Such nanoscale silicon structures, whilst biodegradable in the human gastrointestinal tract, are shown to be remarkably stable in most foodstuffs and beverages. The potential for using silicon to improve the shelf life and bioavailability of specific nutrients in functional foods is highlighted. Published drug delivery data implies that the nanoentrapment of hydrophobic nutrients will significantly improve their dissolution kinetics, through a combined effect of nanostructuring and solid state modification. Nutrients loaded to date include vitamins, fish oils, lycopene and coenzyme Q10. In addition, there is growing published evidence that optimized release of orthosilicic acid, the biodegradation product of semiconducting silicon in the gut, offers beneficial effects with regard bone health. The utility of nanoscale silicon in the nutritional field shows early promise and is worthy of much further study.

Nanoscale semiconducting silicon as a nutritional food additive

International Nuclear Information System (INIS)

Canham, L T

2007-01-01

Very high surface area silicon powders can be realized by high energy milling or electrochemical etching techniques. Such nanoscale silicon structures, whilst biodegradable in the human gastrointestinal tract, are shown to be remarkably stable in most foodstuffs and beverages. The potential for using silicon to improve the shelf life and bioavailability of specific nutrients in functional foods is highlighted. Published drug delivery data implies that the nanoentrapment of hydrophobic nutrients will significantly improve their dissolution kinetics, through a combined effect of nanostructuring and solid state modification. Nutrients loaded to date include vitamins, fish oils, lycopene and coenzyme Q10. In addition, there is growing published evidence that optimized release of orthosilicic acid, the biodegradation product of semiconducting silicon in the gut, offers beneficial effects with regard bone health. The utility of nanoscale silicon in the nutritional field shows early promise and is worthy of much further study

Magnetically enhanced triode etching of large area silicon membranes in a molecular bromine plasma

International Nuclear Information System (INIS)

Wolfe, J.C.; Sen, S.; Pendharkar, S.V.; Mauger, P.; Shimkunas, A.R.

1992-01-01

The optimization of a process for etching 125 mm silicon membranes formed on 150 mm wafers and bonded to Pyrex rings is discussed. A magnetically enhanced triode etching system was designed to provide an intense, remote plasma surrounding the membrane while, at the same time, suppressing the discharge over the membrane itself. For the optimized molecular bromine process, the silicon etch rate is 40 nm/min and the selectivity relative to SiO 2 is 160:1. 14 refs., 6 figs

Plasma texturing on large-area industrial grade CZ silicon solar cells

DEFF Research Database (Denmark)

Davidsen, Rasmus Schmidt; Nordseth, Ørnulf; Schmidt, Michael Stenbæk

2013-01-01

We report on an experimental study of nanostructuring of silicon solar cells using reactive ion etching (RIE). A simple mask-less, scalable RIE nanostructuring of the solar cell surface is shown to reduce the AM1.5-weighted average reflectance to a level below 1 % in a fully optimized RIE texturi...

Defects in silicon effect on device performance and relationship to crystal growth conditions

Science.gov (United States)

Jastrzebski, L.

1985-01-01

A relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.

Fabrication of the GLAST Silicon Tracker Readout Electronics

Energy Technology Data Exchange (ETDEWEB)

Baldini, Luca; Brez, Alessandro; Himel, Thomas; Johnson, R.P.; Latronico, Luca; Minuti, Massimo; Nelson, David; Sadrozinski, H.F.-W.; Sgro, Carmelo; Spandre, Gloria; Sugizaki, Mutsumi; Tajima, Hiro; Cohen Tanugi, Johann; Young, Charles; Ziegler, Marcus; /Pisa U. /INFN, Pisa /SLAC /UC, Santa Cruz

2006-03-03

A unique electronics system has been built and tested for reading signals from the silicon-strip detectors of the Gamma-ray Large Area Space Telescope mission. The system amplifies and processes signals from 884,736 36-cm long silicon strips in a 4 x 4 array of tower modules. An aggressive mechanical design fits the readout electronics in narrow spaces between the tower modules, to minimize dead area. This design and the resulting departures from conventional electronics packaging led to several fabrication challenges and lessons learned. This paper describes the fabrication processes and how the problems peculiar to this design were overcome.

Solar energy innovation and Silicon Valley

Science.gov (United States)

Kammen, Daniel M.

2015-03-01

The growth of the U. S. and global solar energy industry depends on a strong relationship between science and engineering innovation, manufacturing, and cycles of policy design and advancement. The mixture of the academic and industrial engine of innovation that is Silicon Valley, and the strong suite of environmental policies for which California is a leader work together to both drive the solar energy industry, and keep Silicon Valley competitive as China, Europe and other area of solar energy strength continue to build their clean energy sectors.

Note: Anodic bonding with cooling of heat-sensitive areas

DEFF Research Database (Denmark)

Vesborg, Peter Christian Kjærgaard; Olsen, Jakob Lind; Henriksen, Toke Riishøj

2010-01-01

Anodic bonding of silicon to glass always involves heating the glass and device to high temperatures so that cations become mobile in the electric field. We present a simple way of bonding thin silicon samples to borosilicate glass by means of heating from the glass side while locally cooling hea......-sensitive areas from the silicon side. Despite the high thermal conductivity of silicon, this method allows a strong anodic bond to form just millimeters away from areas essentially at room temperature....

New Opportunities in Crystalline Silicon R and D

International Nuclear Information System (INIS)

Menna, P.

1998-01-01

To support the expected growth of the silicon solar cell industry, we believe that research and development (R ampersand D) activities should be carried out in the following areas: polysilicon feedstock for the PV industry; thin-layer silicon deposition methods, and more environmentally benign cell and module manufacturing processes. For each of these activities, we identify the main issues that needed to be addressed

Structures of sub-monolayered silicon carbide films

International Nuclear Information System (INIS)

Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

2004-01-01

The electronic and geometrical structures of silicon carbide thin films are presented. The films were deposited on graphite by ion-beam deposition using tetramethylsilane (TMS) as an ion source. In the Si K-edge near-edge X-ray absorption fine structure (NEXAFS) spectra for sub-monolayered film, sharp peaks due to the resonance from Si 1s to π*-like orbitals were observed, suggesting the existence of Si=C double bonds. On the basis of the polarization dependencies of the Si 1s → π* peak intensities, it is elucidated that the direction of the π*-like orbitals is just perpendicular to the surface. We conclude that the sub-monolayered SiC x film has a flat-lying hexagonal structure of which configuration is analogous to the single sheet of graphite

From silicon to organic nanoparticle memory devices.

Science.gov (United States)

Tsoukalas, D

2009-10-28

After introducing the operational principle of nanoparticle memory devices, their current status in silicon technology is briefly presented in this work. The discussion then focuses on hybrid technologies, where silicon and organic materials have been combined together in a nanoparticle memory device, and finally concludes with the recent development of organic nanoparticle memories. The review is focused on the nanoparticle memory concept as an extension of the current flash memory device. Organic nanoparticle memories are at a very early stage of research and have not yet found applications. When this happens, it is expected that they will not directly compete with mature silicon technology but will find their own areas of application.

Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process

KAUST Repository

Ghoneim, Mohamed T.

2013-11-20

We report the inherent increase in capacitance per unit planar area of state-of-the art high-κ integrated metal/insulator/metal capacitors (MIMCAPs) fabricated on flexible silicon fabric with release-first process. We methodically study and show that our approach to transform bulk silicon (100) into a flexible fabric adds an inherent advantage of enabling higher integration density dynamic random access memory (DRAM) on the same chip area. Our approach is to release an ultra-thin silicon (100) fabric (25 μm thick) from the bulk silicon wafer, then build MIMCAPs using sputtered aluminium electrodes and successive atomic layer depositions (ALD) without break-ing the vacuum of a high-κ aluminium oxide sandwiched between two tantalum nitride layers. This result shows that we can obtain flexible electronics on silicon without sacrificing the high density integration aspects and also utilize the non-planar geometry associated with fabrication process to obtain a higher integration density compared to bulk silicon integration due to an increased normalized capacitance per unit planar area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Automobile sheet metal part production with incremental sheet forming

Directory of Open Access Journals (Sweden)

İsmail DURGUN

2016-02-01

Full Text Available Nowadays, effect of global warming is increasing drastically so it leads to increased interest on energy efficiency and sustainable production methods. As a result of adverse conditions, national and international project platforms, OEMs (Original Equipment Manufacturers, SMEs (Small and Mid-size Manufacturers perform many studies or improve existing methodologies in scope of advanced manufacturing techniques. In this study, advanced manufacturing and sustainable production method "Incremental Sheet Metal Forming (ISF" was used for sheet metal forming process. A vehicle fender was manufactured with or without die by using different toolpath strategies and die sets. At the end of the study, Results have been investigated under the influence of method and parameters used.Keywords: Template incremental sheet metal, Metal forming

Electrical behavior of free-standing porous silicon layers

International Nuclear Information System (INIS)

Bazrafkan, I.; Dariani, R.S.

2009-01-01

The electrical behavior of porous silicon (PS) layers has been investigated on one side of p-type silicon with various anodization currents and electrolytes. The two contact I-V characteristic is assigned by the metal/porous silicon rectifying interface, whereas, by using the van der Pauw technique, a nonlinear dependence of the current vs voltage was found. By using Dimethylformamide (DMF) in electrolyte, regular structures and columns were formed and porosity increased. Our results showed that by using DMF, surface resistivity of PS samples increased and became double for free-standing porous silicon (FPS). The reason could be due to increasing surface area and adsorbing some more gas molecules. Activation energy of PS samples was also increased from 0.31 to 0.34 eV and became 0.35 eV for FPS. The changes induced by storage are attributed to the oxidation process of the internal surface of free-standing porous silicon layers.

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Silicon dioxide obtained by Polymeric Precursor Method

International Nuclear Information System (INIS)

Oliveira, C.T.; Granado, S.R.; Lopes, S.A.; Cavalheiro, A.A.

2011-01-01

The Polymeric Precursor Method is able for obtaining several oxide material types with high surface area even obtained in particle form. Several MO 2 oxide types such as titanium, silicon and zirconium ones can be obtained by this methodology. In this work, the synthesis of silicon oxide was monitored by thermal analysis, XRD and surface area analysis in order to demonstrate the influence of the several synthesis and calcining parameters. Surface area values as higher as 370m2/g and increasing in the micropore volume nm were obtained when the material was synthesized by using ethylene glycol as polymerizing agent. XRD analysis showed that the material is amorphous when calcinated at 600°C in despite of the time of calcining, but the material morphology is strongly influenced by the polymeric resin composition. Using Glycerol as polymerizing agent, the pore size increase and the surface area goes down with the increasing in decomposition time, when compared to ethylene glycol. (author)

Influence of cold rolling direction on texture, inhibitor and magnetic properties in strip-cast grain-oriented 3% silicon steel

Energy Technology Data Exchange (ETDEWEB)

Fang, F., E-mail: fangfengdbdx@163.com [State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China); Lu, X.; Zhang, Y.X.; Wang, Y.; Jiao, H.T.; Cao, G.M.; Yuan, G.; Xu, Y.B. [State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China); Misra, R.D.K. [Laboratory for Excellence in Advanced Steel Research, Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, EL Paso, TX 79968 (United States); Wang, G.D. [State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China)

2017-02-15

An unconventional cold rolling scheme (inclined rolling at 0°, 30°, 45°, 90° during second-stage cold rolling process) was adopted to process grain-oriented silicon steel based on strip casting process. The influences of inclination angles on microstructure, texture, inhibitor and magnetic properties were studied by a combination of EBSD, XRD and TEM. It was found that the α-fiber texture was weakened and γ-fiber was strengthened in cold rolled sheet with increase in inclination angle. The primary recrystallization sheet exhibited more homogeneous microstructure with relatively strong γ-fiber, medium α-fiber texture, weak λ-fiber texture and Goss component at high inclination angles. Fine and homogeneous inhibitors were obtained after primary annealing with increase in inclination angle from 0° to 90° because of more uniform deformation after inclined rolling. The grain-oriented silicon steel experienced completely secondary recrystallization at various inclination angles after final annealing process, with superior magnetic properties at 0° and 90°. Furthermore, Goss nuclei capable of final secondary recrystallization in strip casting process newly formed both in-grain shear bands and grain boundaries region during second-stage cold rolling and subsequent annealing process, which is different from the well-accepted results that Goss texture originated from the subsurface layer of the hot rolled sheet or during intermediate annealing process. In addition, the Goss texture that nucleated in-grain shear bands was weaker but more accurate as compared to that in grain boundaries region. - Highlights: • Inclined cold rolling was adopted to process strip-cast grain-oriented silicon steel. • Influence of inclination angles on texture, inhibitor and magnetic properties was studied. • The initial texture was changed with respect to the inclination angle. • Homogeneous inhibitors were obtained after primary annealing at various inclination angles. �

Antarctic Ice Sheet Slope and Aspect Based on Icesat's Repeat Orbit Measurement

Science.gov (United States)

Yuan, L.; Li, F.; Zhang, S.; Xie, S.; Xiao, F.; Zhu, T.; Zhang, Y.

2017-09-01

Accurate information of ice sheet surface slope is essential for estimating elevation change by satellite altimetry measurement. A study is carried out to recover surface slope of Antarctic ice sheet from Ice, Cloud and land Elevation Satellite (ICESat) elevation measurements based on repeat orbits. ICESat provides repeat ground tracks within 200 meters in cross-track direction and 170 meters in along-track direction for most areas of Antarctic ice sheet. Both cross-track and along-track surface slopes could be obtained by adjacent repeat ground tracks. Combining those measurements yields a surface slope model with resolution of approximately 200 meters. An algorithm considering elevation change is developed to estimate the surface slope of Antarctic ice sheet. Three Antarctic Digital Elevation Models (DEMs) were used to calculate surface slopes. The surface slopes from DEMs are compared with estimates by using in situ GPS data in Dome A, the summit of Antarctic ice sheet. Our results reveal an average surface slope difference of 0.02 degree in Dome A. High resolution remote sensing images are also used in comparing the results derived from other DEMs and this paper. The comparison implies that our results have a slightly better coherence with GPS observation than results from DEMs, but our results provide more details and perform higher accuracy in coastal areas because of the higher resolution for ICESat measurements. Ice divides are estimated based on the aspect, and are weakly consistent with ice divides from other method in coastal regions.

Aerial radiometric and magnetic survey; Brushy Basin detail survey: Price/Salina national topographic map sheets, Utah. Volume III. Area II: graphic data, Section I-II. Final report

International Nuclear Information System (INIS)

1981-01-01

This volume contains all of the graphic data for Area II which consists of map lines 1660 to 3400 and 5360 to 5780, and tie lines 6100, 6120, and 6160. Due to the large map scale of the presented data (1:62,500), this sub-section was divided into eleven 7-1/2 min quadrant sheets

Silicon Detectors-Tools for Discovery in Particle Physics

International Nuclear Information System (INIS)

Krammer, Manfred

2009-01-01

Since the first application of Silicon strip detectors in high energy physics in the early 1980ies these detectors have enabled the experiments to perform new challenging measurements. With these devices it became possible to determine the decay lengths of heavy quarks, for example in the fixed target experiment NA11 at CERN. In this experiment Silicon tracking detectors were used for the identification of particles containing a c-quark. Later on, the experiments at the Large Electron Positron collider at CERN used already larger and sophisticated assemblies of Silicon detectors to identify and study particles containing the b-quark. A very important contribution to the discovery of the last of the six quarks, the top quark, has been made by even larger Silicon vertex detectors inside the experiments CDF and D0 at Fermilab. Nowadays a mature detector technology, the use of Silicon detectors is no longer restricted to the vertex regions of collider experiments. The two multipurpose experiments ATLAS and CMS at the Large Hadron Collider at CERN contain large tracking detectors made of Silicon. The largest is the CMS Inner Tracker consisting of 200 m 2 of Silicon sensor area. These detectors will be very important for a possible discovery of the Higgs boson or of Super Symmetric particles. This paper explains the first applications of Silicon sensors in particle physics and describes the continuous development of this technology up to the construction of the state of the art Silicon detector of CMS.

Property control of graphene aerogels by in situ growth of silicone polymer

Science.gov (United States)

Zhou, Shuai; Zhou, Xiang; Hao, Gazi; Jiang, Wei; Wang, Tianhe

2018-05-01

Modulation of the density (from 3.5 to 64 mg cm-3), hydrophobicity and oil-uptake capability of graphene aerogels in extensive ranges were achieved by reacting (3-Mercaptopropyl)trimethoxysilane (MPS) with graphene oxide solutions under heating. The reaction allowed a characteristic silicone substructure to be formed on graphene and joint the graphene layers firmly together. With the increase of MPS concentrations (≤ca. 0.2 vol%), the nano silicone polymer grown on graphene functioned as a "linker" and "spacer", leading to a substantial decrease of the aerogel density. Because of the formation of silicone polymer and the characteristic nano-micro substructures on the backbones of graphene aerogels, the graphene aerogels exhibited a high hydrophobicity with the water contact angle consistently exceeding 142 degrees. Functionalized graphene aerogels with a density of 3.5 mg cm-3 were conveniently fabricated that displayed an extraordinary oil absorption capacity, 182 times for lubricating oil and 143 times for n-hexane of its own weight. Furthermore, the aerogels maintained their ultra-high absorption capability even after 20 absorption-distillation cycles, due to structural integrity held by the strong interfacial adhesion between graphene sheets and polymer chains of aerogels. This study offers a promising graphene aerogels and also provides a strategy for fabricating extra low dense functional materials.

Nickel Electroless Plating: Adhesion Analysis for Mono-Type Crystalline Silicon Solar Cells.

Science.gov (United States)

Shin, Eun Gu; Rehman, Atteq ur; Lee, Sang Hee; Lee, Soo Hong

2015-10-01

The adhesion of the front electrodes to silicon substrate is the most important parameters to be optimized. Nickel silicide which is formed by sintering process using a silicon substrate improves the mechanical and electrical properties as well as act as diffusion barrier for copper. In this experiment p-type mono-crystalline czochralski (CZ) silicon wafers having resistivity of 1.5 Ω·cm were used to study one step and two step nickel electroless plating process. POCl3 diffusion process was performed to form the emitter with the sheet resistance of 70 ohm/sq. The Six, layer was set down as an antireflection coating (ARC) layer at emitter surface by plasma enhanced chemical vapor deposition (PECVD) process. Laser ablation process was used to open SiNx passivation layer locally for the formation of the front electrodes. Nickel was deposited by electroless plating process by one step and two step nickel electroless deposition process. The two step nickel plating was performed by applying a second nickel deposition step subsequent to the first sintering process. Furthermore, the adhesion analysis for both one step and two steps process was conducted using peel force tester (universal testing machine, H5KT) after depositing Cu contact by light induced plating (LIP).

Geometry of thin liquid sheet flows

Science.gov (United States)

Chubb, Donald L.; Calfo, Frederick D.; Mcconley, Marc W.; Mcmaster, Matthew S.; Afjeh, Abdollah A.

1994-01-01

Incompresible, thin sheet flows have been of research interest for many years. Those studies were mainly concerned with the stability of the flow in a surrounding gas. Squire was the first to carry out a linear, invicid stability analysis of sheet flow in air and compare the results with experiment. Dombrowski and Fraser did an experimental study of the disintegration of sheet flows using several viscous liquids. They also detected the formulation of holes in their sheet flows. Hagerty and Shea carried out an inviscid stability analysis and calculated growth rates with experimental values. They compared their calculated growth rates with experimental values. Taylor studied extensively the stability of thin liquid sheets both theoretically and experimentally. He showed that thin sheets in a vacuum are stable. Brown experimentally investigated thin liquid sheet flows as a method of application of thin films. Clark and Dumbrowski carried out second-order stability analysis for invicid sheet flows. Lin introduced viscosity into the linear stability analysis of thin sheet flows in a vacuum. Mansour and Chigier conducted an experimental study of the breakup of a sheet flow surrounded by high-speed air. Lin et al. did a linear stability analysis that included viscosity and a surrounding gas. Rangel and Sirignano carried out both a linear and nonlinear invisid stability analysis that applies for any density ratio between the sheet liquid and the surrounding gas. Now there is renewed interest in sheet flows because of their possible application as low mass radiating surfaces. The objective of this study is to investigate the fluid dynamics of sheet flows that are of interest for a space radiator system. Analytical expressions that govern the sheet geometry are compared with experimental results. Since a space radiator will operate in a vacuum, the analysis does not include any drag force on the sheet flow.

Enhanced ice sheet growth in Eurasia owing to adjacent ice-dammed lakes.

Science.gov (United States)

Krinner, G; Mangerud, J; Jakobsson, M; Crucifix, M; Ritz, C; Svendsen, J I

2004-01-29

Large proglacial lakes cool regional summer climate because of their large heat capacity, and have been shown to modify precipitation through mesoscale atmospheric feedbacks, as in the case of Lake Agassiz. Several large ice-dammed lakes, with a combined area twice that of the Caspian Sea, were formed in northern Eurasia about 90,000 years ago, during the last glacial period when an ice sheet centred over the Barents and Kara seas blocked the large northbound Russian rivers. Here we present high-resolution simulations with an atmospheric general circulation model that explicitly simulates the surface mass balance of the ice sheet. We show that the main influence of the Eurasian proglacial lakes was a significant reduction of ice sheet melting at the southern margin of the Barents-Kara ice sheet through strong regional summer cooling over large parts of Russia. In our simulations, the summer melt reduction clearly outweighs lake-induced decreases in moisture and hence snowfall, such as has been reported earlier for Lake Agassiz. We conclude that the summer cooling mechanism from proglacial lakes accelerated ice sheet growth and delayed ice sheet decay in Eurasia and probably also in North America.

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Environmentally benign silicon solar cell manufacturing

Energy Technology Data Exchange (ETDEWEB)

Tsuo, Y.S. [National Renewable Energy Lab., Golden, CO (United States); Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States); Menna, P. [National Agency for New Technologies Energy and Environment, Portici (Italy); Strebkov, D.S.; Pinov, A.; Zadde, V. [Intersolarcenter, Moscow (Russian Federation)

1998-09-01

The manufacturing of silicon devices--from polysilicon production, crystal growth, ingot slicing, wafer cleaning, device processing, to encapsulation--requires many steps that are energy intensive and use large amounts of water and toxic chemicals. In the past two years, the silicon integrated-circuit (IC) industry has initiated several programs to promote environmentally benign manufacturing, i.e., manufacturing practices that recover, recycle, and reuse materials resources with a minimal consumption of energy. Crystalline-silicon solar photovoltaic (PV) modules, which accounted for 87% of the worldwide module shipments in 1997, are large-area devices with many manufacturing steps similar to those used in the IC industry. Obviously, there are significant opportunities for the PV industry to implement more environmentally benign manufacturing approaches. Such approaches often have the potential for significant cost reduction by reducing energy use and/or the purchase volume of new chemicals and by cutting the amount of used chemicals that must be discarded. This paper will review recent accomplishments of the IC industry initiatives and discuss new processes for environmentally benign silicon solar-cell manufacturing.

Ice stream behaviour and deglaciation of the Scandinavian Ice Sheet in the Kuittijärvi area, Russian Karelia

Directory of Open Access Journals (Sweden)

Juha-Pekka Lunkka

2008-01-01

Full Text Available Glacial landforms of the Lake Kuittijärvi area, Russian Karelia, which covers an area of more than 7000 km^2, were studied in detail using aerial photography and satellite imagery methods and on-site field observations. This was done to reconstruct a detailed historyof Scandinavian ice sheet behaviour in the Lake Kuittijärvi area. The results indicate that the Lake Tuoppajärvi sub-ice stream (TIS that formed the northern part of the Kuusamo-White Sea ice stream and the Lake Kuittijärvi sub-ice stream (KIS, which was part of theNorthern Karelian ice stream, operated in the area during the last deglaciation. Subglacially formed lineation patterns associated with other indicative landforms such as end moraines and esker ridges indicate a clear age relationship between the ice streams’ activity and that the KIS was active after the linear landforms were created by the TIS. It is estimated that deglaciation of the TIS from the Kalevala end moraine to the Lake Pääjärvi end moraine took place between ca. 11 300 – 10 900 calendar years ago. It seems that the terminus of the KIS marker by the Kalevala end moraine was also formed around 11 300 calendar years ago but the KIS remained active longer than the TIS. Both of these sub-ice streams terminated into a glacial lake that was part of a larger White Sea Basin ice lake.

Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Becker, C.; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Haenel, T.; Lee, K.Y.; Rau, B.; Ruske, F.; Weber, T.; Gall, S.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie (formerly Hahn-Meitner-Institut Berlin), Kekulestr. 5, D-12489 Berlin (Germany); Berginski, M.; Huepkes, J. [Institute of Photovoltaics, Forschungszentrum Juelich GmbH, D-52425 Juelich (Germany)

2009-06-15

The suitability of ZnO:Al thin films for polycrystalline silicon (poly-Si) thin-film solar cell fabrication was investigated. The electrical and optical properties of 700 -nm-thick ZnO:Al films on glass were analyzed after typical annealing steps occurring during poly-Si film preparation. If the ZnO:Al layer is covered by a 30 nm thin silicon film, the initial sheet resistance of ZnO:Al drops from 4.2 to 2.2 {omega} after 22 h annealing at 600 C and only slightly increases for a 200 s heat treatment at 900 C. A thin-film solar cell concept consisting of poly-Si films on ZnO:Al coated glass is introduced. First solar cell results will be presented using absorber layers either prepared by solid-phase crystallization (SPC) or by direct deposition at 600 C. (author)

Teenage Pregnancy. Highlights: An ERIC/CAPS Fact Sheet.

Science.gov (United States)

Lachance, Laurie L.

This fact sheet addresses the issue of teenage pregnancy. Six factors contributing to the current attention focused on teenage pregnancy and parenthood are listed and teenage pregnancy and birth rates are discussed. Other areas covered include teenage nonuse of contraception, sex education by schools and parents, family planning services, and the…

DEVELOPMENT OF CORES FOR MINI MOTORS FROM LAMINATED SHEETS OF ELECTRIC STEEL ABNT (Brazilian Association of Technical Standards 35F 420M WITH THERMAL TREATMENT

Directory of Open Access Journals (Sweden)

Halston Mozetic

2016-06-01

Full Text Available The purposes of this paper were to study the thermal treatment of Fe-Si sheet, as well as the sheet cutting concerning the topology of a mini stepper motor and mini motor simulation using finite element software. The research consisted of the execution of an "Inductive Reheating" thermal treatment of Iron Silicon sheets, NM71-2000/35F 420M with GNO (Grain Non Oriented, and 0.35mm width. The new technique has the benefit of minimizing magnetic losses produced by the cut on the edge of electric sheets. To carry out the process, the system includes a furnace, an induction coil, and a power supply that, when activated in a controlled way, causes relevant changes to the crystalline structure of the material. Related to the cut of the sheets, the topology of a three phase mini stepper motor was considered. The sheets were initially cut using the geometry of the rotor and stator cores. Firstly, a die cutting process was used and later a wire electroerosion cutting process was employed, which provided parts with excellent finishing. Finally, the mini motor was simulated using the finite element software FEMM 4.2 in order to analyze the airgap flow and torque development of the axis end, in comparison to a solid block of the same material (Fe-Si

Silicon spectral response extension through single wall carbon nanotubes in hybrid solar cells

KAUST Repository

Del Gobbo, Silvano; Castrucci, P.; Fedele, S.; Riele, L.; Convertino, A.; Morbidoni, M.; De Nicola, F.; Scarselli, M.; Camilli, L.; De Crescenzi, M.

2013-01-01

Photovoltaic devices based on single wall carbon nanotubes (SWCNTs) and n-silicon multiple heterojunctions have been fabricated by a SWCNT film transferring process. We report on the ability of the carbon nanotubes to extend the Si spectral range towards the near ultraviolet (UV) and the near infrared regions. Semiconducting and about metallic SWCNT networks have been studied as a function of the film sheet resistance, Rsh. Optical absorbance and Raman spectroscopy have been used to assign nanotube chirality and electronic character. This gave us hints of evidence of the participation of the metal nanotubes in the photocurrent generation. Moreover, we provide evidence that the external quantum efficiency spectral range can be modulated as a function of the SWCNT network sheet resistance in a hybrid SWCNT/Si solar cell. This result will be very useful to further design/optimize devices with improved performance in spectral regions generally not covered by conventional Si p-n devices. © 2013 The Royal Society of Chemistry.

Modeling and Design of a New Flexible Graphene-on-Silicon Schottky Junction Solar Cell

Directory of Open Access Journals (Sweden)

Francesco Dell’Olio

2016-10-01

Full Text Available A new graphene-based flexible solar cell with a power conversion efficiency >10% has been designed. The environmental stability and the low complexity of the fabrication process are the two main advantages of the proposed device with respect to other flexible solar cells. The designed solar cell is a graphene/silicon Schottky junction whose performance has been enhanced by a graphene oxide layer deposited on the graphene sheet. The effect of the graphene oxide is to dope the graphene and to act as anti-reflection coating. A silicon dioxide ultrathin layer interposed between the n-Si and the graphene increases the open-circuit voltage of the cell. The solar cell optimization has been achieved through a mathematical model, which has been validated by using experimental data reported in literature. The new flexible photovoltaic device can be integrated in a wide range of microsystems powered by solar energy.

A new research project on the interaction of the solid Earth and the Antarctic Ice Sheet

Science.gov (United States)

Fukuda, Y.; Nishijima, J.; Kazama, T.; Nakamura, K.; Doi, K.; Suganuma, Y.; Okuno, J.; Araya, A.; Kaneda, H.; Aoyama, Y.

2017-12-01

A new research project of "Grant-in-Aid for Scientific Research on Innovative Areas" funded by JSPS (Japan Society for the Promotion of Science) has recently been launched. The title of the project is "Giant reservoirs of heat/water/material: Global environmental changes driven by Southern Ocean and Antarctic Ice Sheet", and as a five years project, is aiming to establish a new research area for Antarctic environmental system science. The project consists of 7 research topics, including Antarctic ice sheet and Southern ocean sciences, new observation methodology, modeling and other interdisciplinary topics, and we are involved in the topic A02-2, "Interaction of the solid Earth and the Antarctic Ice Sheet". The Antarctic ice sheet, which relates to the global climate changes through the sea level rise and ocean circulation, is an essential element of the Earth system for predicting the future environment changes. Thus many studies of the ice sheet changes have been conducted by means of geomorphological, geological, geodetic surveys, as well as satellite gravimetry and satellite altimetry. For these studies, one of the largest uncertainties is the effects of GIA. Therefore, GIA as a key to investigate the interaction between the solid Earth and the ice sheet changes, we plan to conduct geomorphological, geological and geodetic surveys in the inland mountain areas and the coastal areas including the surrounding areas of a Japanese station Syowa in East Antarctica, where the in-situ data for constraining GIA models are very few. Combining these new observations with other in-site data, various satellite data and numerical modeling, we aim to estimating a precise GIA model, constructing a reliable ice melting history after the last glacial maximum and obtaining the viscoelastic structure of the Earth's interior. In the presentation, we also show the five years research plans as well. This study was partially supported by JSPS KAKENHI Grant No. 17H06321.

Clouds enhance Greenland ice sheet mass loss

Science.gov (United States)

Van Tricht, Kristof; Gorodetskaya, Irina V.; L'Ecuyer, Tristan; Lenaerts, Jan T. M.; Lhermitte, Stef; Noel, Brice; Turner, David D.; van den Broeke, Michiel R.; van Lipzig, Nicole P. M.

2015-04-01

Clouds have a profound influence on both the Arctic and global climate, while they still represent one of the key uncertainties in climate models, limiting the fidelity of future climate projections. The potentially important role of thin liquid-containing clouds over Greenland in enhancing ice sheet melt has recently gained interest, yet current research is spatially and temporally limited, focusing on particular events, and their large scale impact on the surface mass balance remains unknown. We used a combination of satellite remote sensing (CloudSat - CALIPSO), ground-based observations and climate model (RACMO) data to show that liquid-containing clouds warm the Greenland ice sheet 94% of the time. High surface reflectivity (albedo) for shortwave radiation reduces the cloud shortwave cooling effect on the absorbed fluxes, while not influencing the absorption of longwave radiation. Cloud warming over the ice sheet therefore dominates year-round. Only when albedo values drop below ~0.6 in the coastal areas during summer, the cooling effect starts to overcome the warming effect. The year-round excess of energy due to the presence of liquid-containing clouds has an extensive influence on the mass balance of the ice sheet. Simulations using the SNOWPACK snow model showed not only a strong influence of these liquid-containing clouds on melt increase, but also on the increased sublimation mass loss. Simulations with the Community Earth System Climate Model for the end of the 21st century (2080-2099) show that Greenland clouds contain more liquid water path and less ice water path. This implies that cloud radiative forcing will be further enhanced in the future. Our results therefore urge the need for improving cloud microphysics in climate models, to improve future projections of ice sheet mass balance and global sea level rise.

Silicon calorimetry for the SSC[ Superconducting Supercollider

International Nuclear Information System (INIS)

Bertrand, C.; Borchi, E.; Brau, J.E.

1989-01-01

SSC experiments will rely heavily on their calorimeters. Silicon calorimetry, which has been introduced in recent years as a useful technology, has many attractive characteristics which may make it a viable option for consideration. The many attractive properties of silicon detectors are reviewed. The relevant present day applications of large areas of silicon detectors are summarize to illustrate the emerging use. The troublesome issue of radiation damage in a high luminosity environment like the SSC is considered with a summary of much of the recent new measurements which help clarify this situation. A discussion of the electronics and a possible mechanical configuration is presented, followed by a summary of the outstanding R and D issues. 31 refs., 11 figs., 3 tabs

Silicon photomultiplier as a detector of Cherenkov photons

International Nuclear Information System (INIS)

Korpar, S.; Dolenec, R.; Hara, K.; Iijima, T.; Krizan, P.; Mazuka, Y.; Pestotnik, R.; Stanovnik, A.; Yamaoka, M.

2008-01-01

A novel photon detector-i.e. the silicon photomultiplier-whose main advantage over conventional photomultiplier tubes is the operation in high magnetic fields, has been tested as a photon detector in a proximity focusing RICH with aerogel radiator. This type of RICH counter is proposed for the upgrade of the Belle detector at the KEK B-factory. Recently produced silicon photomultipliers show less noise and have larger size, which are important issues for a large area photon detector. We measured the single photon pulse height distribution, the timing resolution and the position sensitivity for different silicon photomultipliers (Hamamatsu MPPC HC025, HC050, and HC100). The silicon photomultipliers were then used to detect Cherenkov photons emitted by cosmic ray particles in a proximity focusing aerogel RICH. Various light guides were investigated in order to increase the detection efficiency

The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

Science.gov (United States)

Pisciotta, B. P.; Gross, C.

1976-01-01

Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

Formation of SiC using low energy CO2 ion implantation in silicon

International Nuclear Information System (INIS)

Sari, A.H.; Ghorbani, S.; Dorranian, D.; Azadfar, P.; Hojabri, A.R.; Ghoranneviss, M.

2008-01-01

Carbon dioxide ions with 29 keV energy were implanted into (4 0 0) high-purity p-type silicon wafers at nearly room temperature and doses in the range between 1 x 10 16 and 3 x 10 18 ions/cm 2 . X-ray diffraction analysis (XRD) was used to characterize the formation of SiC in implanted Si substrate. The formation of SiC and its crystalline structure obtained from above mentioned technique. Topographical changes induced on silicon surface, grains and evaluation of them at different doses observed by atomic force microscopy (AFM). Infrared reflectance (IR) and Raman scattering measurements were used to reconfirm the formation of SiC in implanted Si substrate. The electrical properties of implanted samples measured by four point probe technique. The results show that implantation of carbon dioxide ions directly leads to formation of 15R-SiC. By increasing the implantation dose a significant changes were also observed on roughness and sheet resistivity properties.

Severnaya Zemlya, arctic Russia: a nucleation area for Kara Sea ice sheets during the Middle to Late Quaternary

DEFF Research Database (Denmark)

Möller, Per; Lubinski, David J.; Ingólfsson, Ólafur

2006-01-01

Quaternary glacial stratigraphy and relative sea-level changes reveal at least four expansions of the Kara Sea ice sheet over the Severnaya Zemlya Archipelago at 79°N in the Russian Arctic, as indicated from tills interbedded with marine sediments, exposed in stratigraphic superposition, and from......-5e and MIS 5d-3. The MIS 6-5e event, associated with the high marine limit, implies ice-sheet thickness of >2000 m only 200 km from the deep Arctic Ocean, consistent with published evidence of ice grounding at ~1000 m water depth in the central Arctic Ocean. Till fabrics and glacial tectonics record...... repeated expansions of local ice caps exclusively, suggesting wet-based ice cap advance followed by cold-based regional ice-sheet expansion. Local ice caps over highland sites along the perimeter of the shallow Kara Sea, including the Byrranga Mountains, appear to have repeatedly fostered initiation...

Large-area SnO2: F thin films by offline APCVD

International Nuclear Information System (INIS)

Wang, Yan; Wu, Yucheng; Qin, Yongqiang; Zhang, Zhihai; Shi, Chengwu; Zhang, Qingfeng; Li, Changhao; Xia, Xiaohong; Sun, Stanley; Chen, Leon

2011-01-01

Highlights: → Large-area (1245 mm x 635 mm) FTO thin films were successfully deposited by offline APCVD process. → The as-prepared FTO thin films with sheet resistance 8-11 Ω/□ and direct transmittance more than 83% exhibited better than that of the online ones. → The maximum quantum efficiency of the solar cells based on offline FTO substrate was 0.750 at wavelength 540 nm. → The power of the solar modules using the offline FTO as glass substrates was 51.639 W, higher than that of the modules based on the online ones. -- Abstract: In this paper, we reported the successful preparation of fluorine-doped tin oxide (FTO) thin films on large-area glass substrates (1245 mm x 635 mm x 3 mm) by self-designed offline atmospheric pressure chemical vapor deposition (APCVD) process. The FTO thin films were achieved through a combinatorial chemistry approach using tin tetrachloride, water and oxygen as precursors and Freon (F-152, C2H4F2) as dopant. The deposited films were characterized for crystallinity, morphology (roughness) and sheet resistance to aid optimization of materials suitable for solar cells. We got the FTO thin films with sheet resistance 8-11 Ω/□ and direct transmittance more than 83%. X-ray diffraction (XRD) characterization suggested that the as-prepared FTO films were composed of multicrystal, with the average crystal size 200-300 nm and good crystallinity. Further more, the field emission scanning electron microscope (FESEM) images showed that the films were produced with good surface morphology (haze). Selected samples were used for manufacturing tandem amorphous silicon (a-Si:H) thin film solar cells and modules by plasma enhanced chemical vapor deposition (PECVD). Compared with commercially available FTO thin films coated by online chemical vapor deposition, our FTO coatings show excellent performance resulting in a high quantum efficiency yield for a-Si:H solar cells and ideal open voltage and short circuit current for a-Si:H solar

Best Management Practice, Fact Sheet 2. Sheet Flow to Open Space

OpenAIRE

Sample, David; Doumar, Lia

2013-01-01

This publication explains what sheet flow to open space is, where and how it is used, their limitations, routine and nonroutine maintenance, expected costs, and a glossary of terms. This fact sheet is one of a 15-part series on urban stormwater management practices.

Morphology of IR and UV Laser-induced Structural Changes on Silicon Surfaces

International Nuclear Information System (INIS)

Jimenez-Jarquin, J.; Haro-Poniatowski, E.; Fernandez-Guasti, M.; Hernandez-Pozos, J.L.

2005-01-01

Using scanning electronic microscopy, we analyze the structural changes induced in silicon (100) wafers by focused IR (1064 nm) and UV (355 nm) nanosecond laser pulses. The experiments were performed in the laser ablation regime. When a silicon surface is irradiated by laser pulses in an O2 atmosphere conical microstructures are obtained. The changes in silicon surface morphology depend both on the incident radiation wavelength and the environmental atmosphere. We have patterned Si surfaces with a single focused laser spot and, in doing the experiments with IR or UV this reveals significant differences in the initial surface cracking and pattern formation, however the final result consist of an array of microcones when the experiment is carried out in oxygen. We employ a random scanning technique to irradiate silicon surfaces over large areas. In this form we have obtained large patterned areas

Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

Directory of Open Access Journals (Sweden)

Taweewat Krajangsang

2014-01-01

Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Large-size, high-uniformity, random silver nanowire networks as transparent electrodes for crystalline silicon wafer solar cells.

Science.gov (United States)

Xie, Shouyi; Ouyang, Zi; Jia, Baohua; Gu, Min

2013-05-06

Metal nanowire networks are emerging as next generation transparent electrodes for photovoltaic devices. We demonstrate the application of random silver nanowire networks as the top electrode on crystalline silicon wafer solar cells. The dependence of transmittance and sheet resistance on the surface coverage is measured. Superior optical and electrical properties are observed due to the large-size, highly-uniform nature of these networks. When applying the nanowire networks on the solar cells with an optimized two-step annealing process, we achieved as large as 19% enhancement on the energy conversion efficiency. The detailed analysis reveals that the enhancement is mainly caused by the improved electrical properties of the solar cells due to the silver nanowire networks. Our result reveals that this technology is a promising alternative transparent electrode technology for crystalline silicon wafer solar cells.

Gamma Large Area Silicon Telescope (GLAST): Applying silicon strip detector technology to the detection of gamma rays in space

International Nuclear Information System (INIS)

Atwood, W.B.

1993-06-01

The recent discoveries and excitement generated by space satellite experiment EGRET (presently operating on Compton Gamma Ray Observatory -- CGRO) have prompted an investigation into modern detector technologies for the next generation space based gamma ray telescopes. The GLAST proposal is based on silicon strip detectors as the open-quotes technology of choiceclose quotes for space application: no consumables, no gas volume, robust (versus fragile), long lived, and self triggerable. The GLAST detector basically has two components: a tracking module preceding a calorimeter. The tracking module has planes of crossed strip (x,y) 300 μm pitch silicon detectors coupled to a thin radiator to measure the coordinates of converted electron-positron pairs. The gap between the layers (∼5 cm) provides a lever arm for track fitting resulting in an angular resolution of <0.1 degree at high energy. The status of this R ampersand D effort is discussed including details on triggering the instrument, the organization of the detector electronics and readout, and work on computer simulations to model this instrument

Snowmelt on the Greenland Ice Sheet as Derived From Passive Microwave Satellite Data

Science.gov (United States)

Abdalati, Waleed; Steffen, Konrad

1997-01-01

The melt extent of the snow on the Greenland ice sheet is of considerable importance to the ice sheet's mass and energy balance, as well as Arctic and global climates. By comparing passive microwave satellite data to field observations, variations in melt extent have been detected by establishing melt thresholds in the cross-polarized gradient ratio (XPGR). The XPGR, defined as the normalized difference between the 19-GHz horizontal channel and the 37-GHz vertical channel of the Special Sensor Microwave/Imager (SSM/I), exploits the different effects of snow wetness on different frequencies and polarizations and establishes a distinct melt signal. Using this XPGR melt signal, seasonal and interannual variations in snowmelt extent of the ice sheet are studied. The melt is found to be most extensive on the western side of the ice sheet and peaks in late July. Moreover, there is a notable increasing trend in melt area between the years 1979 and 1991 of 4.4% per year, which came to an abrupt halt in 1992 after the eruption of Mt. Pinatubo. A similar trend is observed in the temperatures at six coastal stations. The relationship between the warming trend and increasing melt trend between 1979 and 1991 suggests that a 1 C temperature rise corresponds to an increase in melt area of 73000 sq km, which in general exceeds one standard deviation of the natural melt area variability.

Algae Drive Enhanced Darkening of Bare Ice on the Greenland Ice Sheet

Science.gov (United States)

Stibal, Marek; Box, Jason E.; Cameron, Karen A.; Langen, Peter L.; Yallop, Marian L.; Mottram, Ruth H.; Khan, Alia L.; Molotch, Noah P.; Chrismas, Nathan A. M.; Calı Quaglia, Filippo; Remias, Daniel; Smeets, C. J. P. Paul; van den Broeke, Michiel R.; Ryan, Jonathan C.; Hubbard, Alun; Tranter, Martyn; van As, Dirk; Ahlstrøm, Andreas P.

2017-11-01

Surface ablation of the Greenland ice sheet is amplified by surface darkening caused by light-absorbing impurities such as mineral dust, black carbon, and pigmented microbial cells. We present the first quantitative assessment of the microbial contribution to the ice sheet surface darkening, based on field measurements of surface reflectance and concentrations of light-absorbing impurities, including pigmented algae, during the 2014 melt season in the southwestern part of the ice sheet. The impact of algae on bare ice darkening in the study area was greater than that of nonalgal impurities and yielded a net albedo reduction of 0.038 ± 0.0035 for each algal population doubling. We argue that algal growth is a crucial control of bare ice darkening, and incorporating the algal darkening effect will improve mass balance and sea level projections of the Greenland ice sheet and ice masses elsewhere.

An Imminent Revolution in Modeling Interactions of Ice Sheets With Climate

Science.gov (United States)

Hughes, T.

2008-12-01

Modeling continental ice sheets was inaugurated by meteorologists William Budd and Uwe Radok, with mathematician Richard Jenssen, in 1971. Their model calculated the thermal and mechanical regime using measured surface accumulation rates, temperatures, and elevations, and bed topography. This top-down approach delivered a basal thermal regime of temperatures or melting rates for an assumed basal geothermal heat flux. When Philippe Huybrechts and others incorporated time, largely unknownpast surface conditions had a major effect on present basal thermal conditions. This approach produced ice-sheet models with only a slow response to external forcing, whereas the glacial geological record and climate records from ice and ocean cores show that ice sheets can have rapid changes in size and shape independent of external forcing. These top-down models were wholly inadequate for reconstructing former ice sheets at the LGM for CLIMAP in 1981. Ice-sheet areas,elevations, and volumes provided the albedo, surface topography, and sea-surface area as input to climate models. A bottom-up model based on dated glacial geology was developed to provide the areal extent and basal thermal regime of ice sheets at the LGM. Basal thermal conditions determined ice-bed coupling and therefore the elevation of ice sheets. High convex ice surfaces for slow sheet flow lower about 20 percent when a frozen bed becomes thawed. As further basal melting drowns bedrock bumps that "pin" basal ice, the ice surface becomes concave in fast stream flow that ends as low floating ice shelves at marine ice margins. A revolution in modeling interactions between glaciation, climate, and sea level is driven by new Greenland and Antarctic data from Earth-orbiting satellites, airborne and surface traverses, and deep drilling. We anticipate continuous data acquisition of surface albedo, accumulation/ablation rates, elevations, velocities, and temperatures over a whole ice sheet, mapping basal thermal conditions

FDTD modeling of thin impedance sheets

Science.gov (United States)

Luebbers, Raymond J.; Kunz, Karl S.

1991-01-01

Thin sheets of resistive or dielectric material are commonly encountered in radar cross section calculations. Analysis of such sheets is simplified by using sheet impedances. In this paper it is shown that sheet impedances can be modeled easily and accurately using Finite Difference Time Domain (FDTD) methods.

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

Reconstructing the temperature regime of the Weichselian ice sheet

Energy Technology Data Exchange (ETDEWEB)

Holmlund, P. [Stockholm Univ. (Sweden). Dept. of Physical Geography

1997-04-01

Areas in Sweden are described, where the ice could have been at the pressure melting point during the last ice age. In order to calculate probable degrees of glacial erosion, estimates on the time of ice coverage and the temperature distribution in time are combined data on erosion rates from present day glaciers. An estimate of the extent of ice cover can be made using the proxy temperature record from the Greenland ice cores and a model of the ice sheet. Adding the estimations on climate and ice sheet shape outlined in this contribution, to erosion figures we may conclude that the crucial areas for glaciation erosion are within the mountains and where the present Baltic and the Gulf of Bothnia are situated. At these sites erosion rates of some tens of meters may have occurred. In inland northern Sweden and inland southern Sweden the potential for glacial erosion seems to be small. 14 refs.

Reconstructing the temperature regime of the Weichselian ice sheet

International Nuclear Information System (INIS)

Holmlund, P.

1997-01-01

Areas in Sweden are described, where the ice could have been at the pressure melting point during the last ice age. In order to calculate probable degrees of glacial erosion, estimates on the time of ice coverage and the temperature distribution in time are combined data on erosion rates from present day glaciers. An estimate of the extent of ice cover can be made using the proxy temperature record from the Greenland ice cores and a model of the ice sheet. Adding the estimations on climate and ice sheet shape outlined in this contribution, to erosion figures we may conclude that the crucial areas for glaciation erosion are within the mountains and where the present Baltic and the Gulf of Bothnia are situated. At these sites erosion rates of some tens of meters may have occurred. In inland northern Sweden and inland southern Sweden the potential for glacial erosion seems to be small. 14 refs

Single crystalline electronic structure and growth mechanism of aligned square graphene sheets

Science.gov (United States)

Yang, H. F.; Chen, C.; Wang, H.; Liu, Z. K.; Zhang, T.; Peng, H.; Schröter, N. B. M.; Ekahana, S. A.; Jiang, J.; Yang, L. X.; Kandyba, V.; Barinov, A.; Chen, C. Y.; Avila, J.; Asensio, M. C.; Peng, H. L.; Liu, Z. F.; Chen, Y. L.

2018-03-01

Recently, commercially available copper foil has become an efficient and inexpensive catalytic substrate for scalable growth of large-area graphene films for fundamental research and applications. Interestingly, despite its hexagonal honeycomb lattice, graphene can be grown into large aligned square-shaped sheets on copper foils. Here, by applying angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES) to study the three-dimensional electronic structures of square graphene sheets grown on copper foils, we verified the high quality of individual square graphene sheets as well as their merged regions (with aligned orientation). Furthermore, by simultaneously measuring the graphene sheets and their substrate copper foil, we not only established the (001) copper surface structure but also discovered that the square graphene sheets' sides align with the ⟨110⟩ copper direction, suggesting an important role of copper substrate in the growth of square graphene sheets—which will help the development of effective methods to synthesize high-quality large-size regularly shaped graphene sheets for future applications. This work also demonstrates the effectiveness of micro-ARPES in exploring low-dimensional materials down to atomic thickness and sub-micron lateral size (e.g., besides graphene, it can also be applied to transition metal dichalcogenides and various van der Waals heterostructures)

Greenland Ice sheet mass balance from satellite and airborne altimetry

DEFF Research Database (Denmark)

Khan, Shfaqat Abbas; Bevis, M. G.; Wahr, J. M.

Ice loss from the Greenland Ice Sheet (GrIS) is dominated by loss in the marginal areas. Dynamic induced ice loss and its associated ice surface lowering is often largest close to the glacier calving front and may vary from rates of tens of meters per years to a few meters per year over relatively...... short distances. Hence, high spatial resolution data are required to accurately estimate volume changes. Here, we estimate ice volume change rate of the Greenland ice sheet using data from Ice, Cloud and land Elevation Satellite (ICESat) laser altimeter during 2003-2009 and CryoSat-2 data during 2010...

Monolithic amorphous silicon modules on continuous polymer substrate

Energy Technology Data Exchange (ETDEWEB)

Grimmer, D.P. (Iowa Thin Film Technologies, Inc., Ames, IA (United States))

1992-03-01

This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

Controlled ion-beam transformation of silicon bipolar microwave power transistor's characteristics

International Nuclear Information System (INIS)

Solodukha, V.A.; Snitovskij, Yu.P.

2015-01-01

In this article, a method for changing the silicon bipolar microwave power transistor's characteristics in a direct and deliberate manner by modifying the chemical composition at the molybdenum - silicon boundary, the electro-physical properties of molybdenum - silicon contacts, and the electrophysical characteristics of transistor structure areas by the phosphorus ions irradiation of generated ohmic molybdenum - silicon contacts to the transistor emitters is proposed for the first time. The possibilities of this method are investigated and confirmed experimentally. (authors)

Soft chemical synthesis of silicon nanosheets and their applications

Energy Technology Data Exchange (ETDEWEB)

Nakano, Hideyuki; Ikuno, Takashi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan)

2016-12-15

Two-dimensional silicon nanomaterials are expected to show different properties from those of bulk silicon materials by virtue of surface functionalization and quantum size effects. Since facile fabrication processes of large area silicon nanosheets (SiNSs) are required for practical applications, a development of soft chemical synthesis route without using conventional vacuum processes is a challenging issue. We have recently succeeded to prepare SiNSs with sub-nanometer thicknesses by exfoliating layered silicon compounds, and they are found to be composed of crystalline single-atom-thick silicon layers. In this review, we present the synthesis and modification methods of SiNSs. These SiNSs have atomically flat and smooth surfaces due to dense coverage of organic moieties, and they are easily self-assembled in a concentrated state to form a regularly stacked structure. We have also characterized the electron transport properties and the electronic structures of SiNSs. Finally, the potential applications of these SiNSs and organic modified SiNSs are also reviewed.

Porous silicon based anode material formed using metal reduction

Science.gov (United States)

Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

2015-09-22

A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Analysis about diamond tool wear in nano-metric cutting of single crystal silicon using molecular dynamics method

Science.gov (United States)

Wang, Zhiguo; Liang, Yingchun; Chen, Mingjun; Tong, Zhen; Chen, Jiaxuan

2010-10-01

Tool wear not only changes its geometry accuracy and integrity, but also decrease machining precision and surface integrity of workpiece that affect using performance and service life of workpiece in ultra-precision machining. Scholars made a lot of experimental researches and stimulant analyses, but there is a great difference on the wear mechanism, especially on the nano-scale wear mechanism. In this paper, the three-dimensional simulation model is built to simulate nano-metric cutting of a single crystal silicon with a non-rigid right-angle diamond tool with 0 rake angle and 0 clearance angle by the molecular dynamics (MD) simulation approach, which is used to investigate the diamond tool wear during the nano-metric cutting process. A Tersoff potential is employed for the interaction between carbon-carbon atoms, silicon-silicon atoms and carbon-silicon atoms. The tool gets the high alternating shear stress, the tool wear firstly presents at the cutting edge where intension is low. At the corner the tool is splitted along the {1 1 1} crystal plane, which forms the tipping. The wear at the flank face is the structure transformation of diamond that the diamond structure transforms into the sheet graphite structure. Owing to the tool wear the cutting force increases.

Plasma dynamics in current sheets

International Nuclear Information System (INIS)

Bogdanov, S.Yu.; Drejden, G.V.; Kirij, N.P.; AN SSSR, Leningrad

1992-01-01

Plasma dynamics in successive stages of current sheet evolution is investigated on the base of analysis of time-spatial variations of electron density and electrodynamic force fields. Current sheet formation is realized in a two-dimensional magnetic field with zero line under the action of relatively small initial disturbances (linear regimes). It is established that in the limits of the formed sheet is concentrated dense (N e ∼= 10 16 cm -3 ) (T i ≥ 100 eV, bar-Z i ≥ 2) hot pressure of which is balanced by the magnetic action of electrodynamic forces is carried out both plasma compression in the sheet limits and the acceleration along the sheet surface from a middle to narrow side edges

Treatment of transparent conductive oxides by laser processes for the development of Silicon photovoltaic cells

International Nuclear Information System (INIS)

Canteli Perez-Caballero, D.

2015-01-01

Transparent conductive oxides (TCOs) are heavily doped oxides with high transparency in the visible range of the spectrum and a very low sheet resistance, making them very attractive for applications in optoelectronic devices. TCOs are widely found in many different areas such as low emissivity windows, electric contacts in computers, televisions or portable devices, and, specially, in the photovoltaic (PV) industry. PV industry is mainly based on mono- and multicrystalline silicon, where TCOs are used as anti-reflective coatings, but the search for cheaper, alternative technologies has led to the development of thin film PV technologies, where TCOs are used as transparent contacts. With the maturation of the thin film PV industry, laser sources have become an essential tool, allowing the improvement of some industrial processes and the development of new ones. Because of the interest on a deeper understanding of the interaction processes between laser light and TCOs, the laser ablation of three of the most important TCOs has been studied in depth in the present work. (Author)

Tube sheet structural analysis of intermediate heat exchanger for fast breeder reactor 'Monju'

International Nuclear Information System (INIS)

Nakagawa, Y.; Ueno, T.; Fukuda, Y.; Ichimiya, M.

1983-01-01

The Prototype Fast Breeder Reactor 'Monju' is the first power generating fast breeder reactor in Japan. We have been designing the components of the plant for manufacturing. Among these is the intermediate heat exchanger (IHX) which exchanges heat between primary and secondary sodium loop. The tube sheet of IHX (shell to ligament junction) is a difficult area from the view point of structural strength design under elevated temperature. To validate the structural integrity of tube sheet we performed the series of inelastic analysis and tube sheet thermal shock test using test pieces and half scale model of actual design. The results of inelastic analyses showed there is little progressive deformation around shell to ligament structural discontinuous junction. Furthermore, thermal shock tests showed no increase of an accumulative deformation. By these analyses and experiments, structural reliability of tube sheet could be shown. (author)

AZO-Ag-AZO transparent electrode for amorphous silicon solar cells

International Nuclear Information System (INIS)

Theuring, Martin; Vehse, Martin; Maydell, Karsten von; Agert, Carsten

2014-01-01

Metal-based transparent electrodes can be fabricated at low temperatures, which is crucial for various substrate materials and solar cells. In this work, an oxide-metal-oxide (OMO) transparent electrode based on aluminum zinc oxide (AZO) and silver is compared to AZO layers, fabricated at different temperatures and indium tin oxides. With the OMO structure, a sheet resistance of 7.1/square and a transparency above 80% for almost the entire visible spectrum were achieved. The possible application of such electrodes on a textured solar cell was demonstrated on the example of a rough ZnO substrate. An OMO structure is benchmarked in a n-i-p amorphous silicon solar cell against an AZO front contact fabricated at 200 °C. In the experiment, the OMO electrode shows a superior performance with an efficiency gain of 30%. - Highlights: • Multilayer transparent electrode based on aluminum zinc oxide (AZO) and Ag • Comparison of AZO-Ag-AZO transparent electrode to AZO and indium tin oxide • Performance of AZO-Ag-AZO transparent electrodes on textured surfaces • Comparison of amorphous silicon solar cells with different transparent electrodes

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Science.gov (United States)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Thermomechanical responses of concrete members strengthened with cfrp sheets

Science.gov (United States)

Alqurashi, Abdulaziz

Strengthening structural members means to be able to carry additional loads. Since, 1990s, a lot of materials and techniques have been established to not only increasing the capacity of member but also facing deterioration. Deterioration has become one of the worst highly maintenance cost. According to The ASCE, 27.1% of all bridges in the United States are not effectual. This is because the high traffic reflects negatively to structural members and cause deterioration of these members. This problem has been cost a lot of money. In addition, FRP has approved that it can increase the capacity of member and overcome some disadvantages such as deterioration. Therefore, CFRP sheet has become widely used. However, high temperatures affect the performance of externally bonded CFRP sheet negatively. Investigation should be carried out on relaxation and flexural performance of members under different temperatures. Therefore, this thesis focus on analyzing and investigating the performance of strengthened members exposed to elevated temperatures (25 to 175 °C). The experimental program was divided to two main parts. First, 144 strengthen concrete blocks 100mm X 150mm X 75mm has been exposed to elevated temperatures. These blocks have two main categories, which are different CFRP sheet width, and different CFRP sheet length. Different CFRP width has three types, which are type 0.25B (25mm x 100mm), type 0.5B (50mm x 100mm) and type 0.75B (75mm x 100mm). Also, Different CFRP length has three types, which are type L e (bonded area of 50 mm by 90mm), 1.25 Le (area of 50mm by 125mm) and type 1.5Le (50mm by 137 mm). Second, studying the performance of RC beams exposed to elevated temperatures.

The extreme melt across the Greenland ice sheet in 2012

Science.gov (United States)

Nghiem, S. V.; Hall, D. K.; Mote, T. L.; Tedesco, M.; Albert, M. R.; Keegan, K.; Shuman, C. A.; DiGirolamo, N. E.; Neumann, G.

2012-10-01

The discovery of the 2012 extreme melt event across almost the entire surface of the Greenland ice sheet is presented. Data from three different satellite sensors - including the Oceansat-2 scatterometer, the Moderate-resolution Imaging Spectroradiometer, and the Special Sensor Microwave Imager/Sounder - are combined to obtain composite melt maps, representing the most complete melt conditions detectable across the ice sheet. Satellite observations reveal that melt occurred at or near the surface of the Greenland ice sheet across 98.6% of its entire extent on 12 July 2012, including the usually cold polar areas at high altitudes like Summit in the dry snow facies of the ice sheet. This melt event coincided with an anomalous ridge of warm air that became stagnant over Greenland. As seen in melt occurrences from multiple ice core records at Summit reported in the published literature, such a melt event is rare with the last significant one occurring in 1889 and the next previous one around seven centuries earlier in the Medieval Warm Period. Given its rarity, the 2012 extreme melt across Greenland provides an exceptional opportunity for new studies in broad interdisciplinary geophysical research.

Rupture of nanoscaled water sheets in the presence of an applied electric field

Energy Technology Data Exchange (ETDEWEB)

Gopan, Nandu, E-mail: nandug@jncasr.ac.in [Engineering Mechanics Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore-560 064 (India)

2016-12-15

Understanding the behaviour of water sheets is relevant in numerous areas, such as thin film coating and atomisation. The rupture of planar liquid sheets are interesting due to the fact that they are objects of co-dimension 1. Previous work seems to suggest that a generic route to liquid structure fragmentation is via liquid sheets. The interplay between inertia, surface tension and viscosity is crucial in determining the dynamics of liquid sheets at a macro scale. At the nanoscale, where thermal fluctuations are expected to play a dominant role, the dynamics become more interesting. The stability and rupture dynamics of nanoscaled water sheets, at constant temperature, are studied using constrained molecular dynamics (MD) simulations. The SPC/E potential with long range electrostatics is used to simulate water molecules. The effect of an applied electric field on the stability of the nanoscaled water sheet forms the focus of this study. The effect of the initial configuration is studied by changing the random seed values used for velocity initialisation. The effect of sheet thickness on the rupture dynamics is also explored. It is seen that when large electric fields (5 V/nm) act across very thin sheets (1 layer), then breakup into multiple ellipsoidal structures is a possibility, and the response of the fluid structure to the applied electric field is non-linear. Furthermore, it is seen that Taylor's predictions for the critical electric field intensity, based on classical electro-hydrodynamics for the onset of instability in macroscopic drops, scales surprisingly well for the case of nanoscaled sheets. (paper)

46 CFR 232.4 - Balance sheet accounts.

Science.gov (United States)

2010-10-01

... 46 Shipping 8 2010-10-01 2010-10-01 false Balance sheet accounts. 232.4 Section 232.4 Shipping... ACTIVITIES UNIFORM FINANCIAL REPORTING REQUIREMENTS Balance Sheet § 232.4 Balance sheet accounts. (a.... (b) Purpose of balance sheet accounts. The balance sheet accounts are intended to disclose the...

How might the North American ice sheet influence the northwestern Eurasian climate?

Science.gov (United States)

Beghin, P.; Charbit, S.; Dumas, C.; Kageyama, M.; Ritz, C.

2015-10-01

It is now widely acknowledged that past Northern Hemisphere ice sheets covering Canada and northern Europe at the Last Glacial Maximum (LGM) exerted a strong influence on climate by causing changes in atmospheric and oceanic circulations. In turn, these changes may have impacted the development of the ice sheets themselves through a combination of different feedback mechanisms. The present study is designed to investigate the potential impact of the North American ice sheet on the surface mass balance (SMB) of the Eurasian ice sheet driven by simulated changes in the past glacial atmospheric circulation. Using the LMDZ5 atmospheric circulation model, we carried out 12 experiments under constant LGM conditions for insolation, greenhouse gases and ocean. In these experiments, the Eurasian ice sheet is removed. The 12 experiments differ in the North American ice-sheet topography, ranging from a white and flat (present-day topography) ice sheet to a full-size LGM ice sheet. This experimental design allows the albedo and the topographic impacts of the North American ice sheet onto the climate to be disentangled. The results are compared to our baseline experiment where both the North American and the Eurasian ice sheets have been removed. In summer, the sole albedo effect of the American ice sheet modifies the pattern of planetary waves with respect to the no-ice-sheet case, resulting in a cooling of the northwestern Eurasian region. By contrast, the atmospheric circulation changes induced by the topography of the North American ice sheet lead to a strong decrease of this cooling. In winter, the Scandinavian and the Barents-Kara regions respond differently to the American ice-sheet albedo effect: in response to atmospheric circulation changes, Scandinavia becomes warmer and total precipitation is more abundant, whereas the Barents-Kara area becomes cooler with a decrease of convective processes, causing a decrease of total precipitation. The gradual increase of the

INDUCTION HEATING OF NON-MAGNETIC SHEET METALS IN THE FIELD OF A FLAT CIRCULAR MULTITURN SOLENOID

Directory of Open Access Journals (Sweden)

Y. Batygin

2016-06-01

Full Text Available The theoretical analysis of electromagnetic processes in the system for induction heating presented by a flat circular multiturn solenoid positioned above a plane of thin sheet non-magnetic metal has been conducted. The calculated dependences for the current induced in a metal sheet blank and ratio of transformation determined have been obtained. The maximal value of the transformation ratio with regard to spreading the eddy-currents over the whole area of the sheet metal has been determined.

Global ice sheet modeling

International Nuclear Information System (INIS)

Hughes, T.J.; Fastook, J.L.

1994-05-01

The University of Maine conducted this study for Pacific Northwest Laboratory (PNL) as part of a global climate modeling task for site characterization of the potential nuclear waste respository site at Yucca Mountain, NV. The purpose of the study was to develop a global ice sheet dynamics model that will forecast the three-dimensional configuration of global ice sheets for specific climate change scenarios. The objective of the third (final) year of the work was to produce ice sheet data for glaciation scenarios covering the next 100,000 years. This was accomplished using both the map-plane and flowband solutions of our time-dependent, finite-element gridpoint model. The theory and equations used to develop the ice sheet models are presented. Three future scenarios were simulated by the model and results are discussed

3D tissue formation by stacking detachable cell sheets formed on nanofiber mesh.

Science.gov (United States)

Kim, Min Sung; Lee, Byungjun; Kim, Hong Nam; Bang, Seokyoung; Yang, Hee Seok; Kang, Seong Min; Suh, Kahp-Yang; Park, Suk-Hee; Jeon, Noo Li

2017-03-23

We present a novel approach for assembling 3D tissue by layer-by-layer stacking of cell sheets formed on aligned nanofiber mesh. A rigid frame was used to repeatedly collect aligned electrospun PCL (polycaprolactone) nanofiber to form a mesh structure with average distance between fibers 6.4 µm. When human umbilical vein endothelial cells (HUVECs), human foreskin dermal fibroblasts, and skeletal muscle cells (C2C12) were cultured on the nanofiber mesh, they formed confluent monolayers and could be handled as continuous cell sheets with areas 3 × 3 cm 2 or larger. Thicker 3D tissues have been formed by stacking multiple cell sheets collected on frames that can be nested (i.e. Matryoshka dolls) without any special tools. When cultured on the nanofiber mesh, skeletal muscle, C2C12 cells oriented along the direction of the nanofibers and differentiated into uniaxially aligned multinucleated myotube. Myotube cell sheets were stacked (upto 3 layers) in alternating or aligned directions to form thicker tissue with ∼50 µm thickness. Sandwiching HUVEC cell sheets with two dermal fibroblast cell sheets resulted in vascularized 3D tissue. HUVECs formed extensive networks and expressed CD31, a marker of endothelial cells. Cell sheets formed on nanofiber mesh have a number of advantages, including manipulation and stacking of multiple cell sheets for constructing 3D tissue and may find applications in a variety of tissue engineering applications.

Sheet production apparatus for removing a crystalline sheet from the surface of a melt using gas jets located above and below the crystalline sheet

Energy Technology Data Exchange (ETDEWEB)

Kellerman, Peter L.; Thronson, Gregory D.

2017-06-14

In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.

Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme

Science.gov (United States)

Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro

2013-04-01

In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

Graphene: powder, flakes, ribbons, and sheets.

Science.gov (United States)

James, Dustin K; Tour, James M

2013-10-15

fibers and in the fabrication of large area transparent electrodes. Using solid carbon sources such as polymers, food, insects, and waste, we can grow monolayer and bilayer graphene directly on metal catalysts, and carbon-sources containing nitrogen can produce nitrogen-doped graphene. The resulting graphene can be transferred to other surfaces, such as metal grids, for potential use in transparent touch screens for applications in personal electronics and large area photovoltaic devices. Because the transfer of graphene from one surface to another can lead to defects, low yields, and higher costs, we have developed methods for growing graphene directly on the substrates of interest. We can also produce patterned graphene to make GNRs or graphane/graphene superlattices within a single sheet. These superlattices could have multiple functions for use in sensors and other devices. This Account only touches upon this burgeoning area of materials chemistry, and the field will continue to expand as researchers imagine new forms and applications of graphene.

The DAMPE silicon tungsten tracker

CERN Document Server

Gallo, Valentina; Asfandiyarov, R; Azzarello, P; Bernardini, P; Bertucci, B; Bolognini, A; Cadoux, F; Caprai, M; Domenjoz, M; Dong, Y; Duranti, M; Fan, R; Franco, M; Fusco, P; Gargano, F; Gong, K; Guo, D; Husi, C; Ionica, M; Lacalamita, N; Loparco, F; Marsella, G; Mazziotta, M N; Mongelli, M; Nardinocchi, A; Nicola, L; Pelleriti, G; Peng, W; Pohl, M; Postolache, V; Qiao, R; Surdo, A; Tykhonov, A; Vitillo, S; Wang, H; Weber, M; Wu, D; Wu, X; Zhang, F; De Mitri, I; La Marra, D

2017-01-01

The DArk Matter Particle Explorer (DAMPE) satellite has been successfully launched on the 17th December 2015. It is a powerful space detector designed for the identification of possible Dark Matter signatures thanks to its capability to detect electrons and photons with an unprecedented energy resolution in an energy range going from few GeV up to 10 TeV. Moreover, the DAMPE satellite will contribute to a better understanding of the propagation mechanisms of high energy cosmic rays measuring the nuclei flux up to 100 TeV. DAMPE is composed of four sub-detectors: a plastic strip scintillator, a silicon-tungsten tracker-converter (STK), a BGO imaging calorimeter and a neutron detector. The STK is made of twelve layers of single-sided AC-coupled silicon micro-strip detectors for a total silicon area of about 7 $m^2$ . To promote the conversion of incident photons into electron-positron pairs, tungsten foils are inserted into the supporting structure. In this document, a detailed description of the STK constructi...

A Synthesis of the Basal Thermal State of the Greenland Ice Sheet

Science.gov (United States)

Macgregor, J. A.; Fahnestock, M. A.; Catania, G. A.; Aschwanden, A.; Clow, G. D.; Colgan, W. T.; Gogineni, S. P.; Morlighem, M.; Nowicki, S. M. J.; Paden, J. D.;

Time-Efficient High-Resolution Large-Area Nano-Patterning of Silicon Dioxide

Directory of Open Access Journals (Sweden)

Li Lin

2017-01-01

Full Text Available A nano-patterning approach on silicon dioxide (SiO2 material, which could be used for the selective growth of III-V nanowires in photovoltaic applications, is demonstrated. In this process, a silicon (Si stamp with nanopillar structures was first fabricated using electron-beam lithography (EBL followed by a dry etching process. Afterwards, the Si stamp was employed in nanoimprint lithography (NIL assisted with a dry etching process to produce nanoholes on the SiO2 layer. The demonstrated approach has advantages such as a high resolution in nanoscale by EBL and good reproducibility by NIL. In addition, high time efficiency can be realized by one-spot electron-beam exposure in the EBL process combined with NIL for mass production. Furthermore, the one-spot exposure enables the scalability of the nanostructures for different application requirements by tuning only the exposure dose. The size variation of the nanostructures resulting from exposure parameters in EBL, the pattern transfer during nanoimprint in NIL, and subsequent etching processes of SiO2 were also studied quantitatively. By this method, a hexagonal arranged hole array in SiO2 with a hole diameter ranging from 45 to 75 nm and a pitch of 600 nm was demonstrated on a four-inch wafer.

Ocular silicon distribution and clearance following intravitreal injection of porous silicon microparticles.

Science.gov (United States)

Nieto, Alejandra; Hou, Huiyuan; Sailor, Michael J; Freeman, William R; Cheng, Lingyun

2013-11-01

Porous silicon (pSi) microparticles have been investigated for intravitreal drug delivery and demonstrated good biocompatibility. With the appropriate surface chemistry, pSi can reside in vitreous for months or longer. However, ocular distribution and clearance pathway of its degradation product, silicic acid, are not well understood. In the current study, rabbit ocular tissue was collected at different time point following fresh pSi (day 1, 5, 9, 16, and 21) or oxidized pSi (day 3, 7, 14, 21, and 35) intravitreal injection. In addition, dual-probe simultaneous microdialysis of aqueous and vitreous humor was performed following a bolus intravitreal injection of 0.25 mL silicic acid (150 μg/mL) and six consecutive microdialysates were collected every 20 min. Silicon was quantified from the samples using inductively coupled plasma-optical emission spectroscopy. The study showed that following the intravitreal injection of oxidized pSi, free silicon was consistently higher in the aqueous than in the retina (8.1 ± 6.5 vs. 3.4 ± 3.9 μg/mL, p = 0.0031). The area under the concentration-time curve (AUC) of the retina was only about 24% that of the aqueous. The mean residence time was 16 days for aqueous, 13 days for vitreous, 6 days for retina, and 18 days for plasma. Similarly, following intravitreal fresh pSi, free silicon was also found higher in aqueous than in retina (7 ± 4.7 vs. 3.4 ± 4.1 μg/mL, p = 0.014). The AUC for the retina was about 50% of the AUC for the aqueous. The microdialysis revealed the terminal half-life of free silicon in the aqueous was 30 min and 92 min in the vitreous; the AUC for aqueous accounted for 38% of the AUC for vitreous. Our studies indicate that aqueous humor is a significant pathway for silicon egress from the eye following intravitreal injection of pSi crystals. Copyright © 2013 Elsevier Ltd. All rights reserved.

Geochemistry of silicon isotopes

Energy Technology Data Exchange (ETDEWEB)

Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

2018-04-01

Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

Identification of critical areas of carotid stent navigation by measurement of resistive forces in vitro, using silicone phantoms

International Nuclear Information System (INIS)

Sengupta, A.; Kesavadas, T.; Baier, R.E.; Hoffmann, K.R.; Schafer, S.

2007-01-01

Manipulation of surgical tools in neuro-endovascular surgery presents problems that are unique to this procedure. Navigating tools through arterial complexities without appropriate visual or force feedback information often causes tool snagging, plaque dislocations and formation of thrombosis from the damage of the arterial wall by the tools. Identifying the critical areas in the vasculature during navigation of endovascular tools, will not only ensure safer surgical planning but also reduce risks of vessel damage. In the present research, resistive forces of stent navigation were measured in-vitro using silicone phantoms and clinically relevant surgical devices. The patterns of variation of the forces along the path of the stent movement were analyzed and mapped along the path of stent movement using a color code. It was observed that the forces changed along the length of the vessel, independent of the insertion length but based on the curvature of the vessel and the contact area of the device in the vessel lumen. (orig.)

Selfsupported epitaxial silicon films

International Nuclear Information System (INIS)

Lazarovici, D.; Popescu, A.

1975-01-01

The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

Improving Surface Mass Balance Over Ice Sheets and Snow Depth on Sea Ice

Science.gov (United States)

Koenig, Lora Suzanne; Box, Jason; Kurtz, Nathan

2013-01-01

Surface mass balance (SMB) over ice sheets and snow on sea ice (SOSI) are important components of the cryosphere. Large knowledge gaps remain in scientists' abilities to monitor SMB and SOSI, including insufficient measurements and difficulties with satellite retrievals. On ice sheets, snow accumulation is the sole mass gain to SMB, and meltwater runoff can be the dominant single loss factor in extremely warm years such as 2012. SOSI affects the growth and melt cycle of the Earth's polar sea ice cover. The summer of 2012 saw the largest satellite-recorded melt area over the Greenland ice sheet and the smallest satellite-recorded Arctic sea ice extent, making this meeting both timely and relevant.

Microcrystalline bottom cells in large area thin film silicon MICROMORPH™ solar modules

Czech Academy of Sciences Publication Activity Database

Hoetzel, J.E.; Caglar, O.; Cashmore, J.S.; Goury, C.; Kalaš, J.; Klindworth, M.; Kupich, M.; Leu, G.F.; Lindic, M.H.; Losio, P.A.; Mates, Tomáš; Mereu, B.; Roschek, T.; Sinicco, I.

2016-01-01

Roč. 157, Dec (2016), s. 178-189 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * material quality * PECVD * Raman crystallinity * grading * micromorph Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.784, year: 2016

Vitamin and Mineral Supplement Fact Sheets

Science.gov (United States)

... website Submit Search NIH Office of Dietary Supplements Vitamin and Mineral Supplement Fact Sheets Search the list ... Supplements: Background Information Botanical Dietary Supplements: Background Information Vitamin and Mineral Fact Sheets Botanical Supplement Fact Sheets ...

Dynamics of Radially Expanding Liquid Sheets

Science.gov (United States)

Majumdar, Nayanika; Tirumkudulu, Mahesh S.

2018-04-01

The process of atomization often involves ejecting thin liquid sheets at high speeds from a nozzle that causes the sheet to flap violently and break up into fine droplets. The flapping of the liquid sheet has long been attributed to the sheet's interaction with the surrounding gas phase. Here, we present experimental evidence to the contrary and show that the flapping is caused by the thinning of the liquid sheet as it spreads out from the nozzle exit. The measured growth rates of the waves agree remarkably well with the predictions of a recent theory that accounts for the sheet's thinning but ignores aerodynamic interactions. We anticipate these results to not only lead to more accurate predictions of the final drop-size distribution but also enable more efficient designs of atomizers.

A miniature solar device for overall water splitting consisting of series-connected spherical silicon solar cells

KAUST Repository

Kageshima, Yosuke

2016-04-18

A novel “photovoltaics (PV) + electrolyzer” concept is presented using a simple, small, and completely stand-alone non-biased device for solar-driven overall water splitting. Three or four spherical-shaped p-n junction silicon balls were successfully connected in series, named “SPHELAR.” SPHELAR possessed small projected areas of 0.20 (3PVs) and 0.26 cm2 (4PVs) and exhibited working voltages sufficient for water electrolysis. Impacts of the configuration on the PV module performance were carefully analyzed, revealing that a drastic increase in the photocurrent (≈20%) was attained by the effective utilization of a reflective sheet. Separate investigations on the electrocatalyst performance showed that non-noble metal based materials with reasonably small sizes (<0.80 cm2) exhibited substantial currents at the PV working voltage. By combining the observations of the PV characteristics, light management and electrocatalyst performance, solar-driven overall water splitting was readily achieved, reaching solar-to-hydrogen efficiencies of 7.4% (3PVs) and 6.4% (4PVs).

A miniature solar device for overall water splitting consisting of series-connected spherical silicon solar cells

KAUST Repository

Kageshima, Yosuke; Shinagawa, Tatsuya; Kuwata, Takaaki; Nakata, Josuke; Minegishi, Tsutomu; Takanabe, Kazuhiro; Domen, Kazunari

2016-01-01

A novel “photovoltaics (PV) + electrolyzer” concept is presented using a simple, small, and completely stand-alone non-biased device for solar-driven overall water splitting. Three or four spherical-shaped p-n junction silicon balls were successfully connected in series, named “SPHELAR.” SPHELAR possessed small projected areas of 0.20 (3PVs) and 0.26 cm2 (4PVs) and exhibited working voltages sufficient for water electrolysis. Impacts of the configuration on the PV module performance were carefully analyzed, revealing that a drastic increase in the photocurrent (≈20%) was attained by the effective utilization of a reflective sheet. Separate investigations on the electrocatalyst performance showed that non-noble metal based materials with reasonably small sizes (<0.80 cm2) exhibited substantial currents at the PV working voltage. By combining the observations of the PV characteristics, light management and electrocatalyst performance, solar-driven overall water splitting was readily achieved, reaching solar-to-hydrogen efficiencies of 7.4% (3PVs) and 6.4% (4PVs).

Stress analysis and deformation prediction of sheet metal workpieces based on finite element simulation

OpenAIRE

Ren Penghao; Wang Aimin; Wang Xiaolong; Zhang Yanlin

2017-01-01

After aluminum alloy sheet metal parts machining, the residual stress release will cause a large deformation. To solve this problem, this paper takes a aluminum alloy sheet aerospace workpiece as an example, establishes the theoretical model of elastic deformation and the finite element model, and places quantitative initial stress in each element of machining area, analyses stress release simulation and deformation. Through different initial stress release simulative analysis of deformation ...

Sensing of DNA by graphene-on-silicon FET structures at DC and 101 GHz

Directory of Open Access Journals (Sweden)

E.R. Brown

2015-09-01

Full Text Available A graphene–silicon field-effect transistor (GFET structure is demonstrated as a detector of single-stranded 13-mer DNA simultaneously at DC and 101 GHz at three different molarities: 0.01, 1.0 and 100 nM. The mechanism for detection at DC is the DNA-induced change in lateral sheet conductance, whereas at 101 GHz it is the change in RF sheet conductance and the resulting effect on the perpendicular beam transmittance through the GFET acting as an optical etalon. For example, after application and drying of the DNA on a GFET film biased to a DC sheet conductance of 2.22 mS, the 1.0 nM solution is found to reduce this by 1.24 mS with a post-detection signal-to-noise ratio of 43 dB, and to increase the transmitted 101-GHz signal from 0.828 to 0.907 mV (arbitrary units with a post-detection signal-to-noise ratio of 36 dB. The increase in transmittance is consistent with a drop of the 101-GHz sheet conductance, but not as much drop as the DC value. Excellent sensitivity is also achieved with the 0.01-nm solution, yielding a DC SNR of 41 dB and a 101-GHz SNR of 23 dB. Keywords: Graphene, DNA, THz, DC, Detection

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Note: Experimental observation of nano-channel pattern in light sheet laser interference nanolithography system

Energy Technology Data Exchange (ETDEWEB)

Mohan, Kavya; Mondal, Partha Pratim, E-mail: partha@iap.iisc.ernet.in [Nanobioimaging Laboratory, Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012 (India)

2016-06-15

We experimentally observed nano-channel-like pattern in a light-sheet based interference nanolithography system. The optical system created nano-channel-like patterned illumination. Coherent counter-propagating light sheets are made to interfere at and near geometrical focus along the propagation z-axis. This results in the formation of nano-channel-like pattern (of size ≈ 300 nm and inter-channel periodicity of ≈337.5 nm) inside the sample due to constructive and destructive interference. In addition, the technique has the ability to generate large area patterning using larger light-sheets. Exciting applications are in the broad field of nanotechnology (nano-electronics and nano-fluidics).

Buckling and stretching of thin viscous sheets

Science.gov (United States)

O'Kiely, Doireann; Breward, Chris; Griffiths, Ian; Howell, Peter; Lange, Ulrich

2016-11-01

Thin glass sheets are used in smartphone, battery and semiconductor technology, and may be manufactured by producing a relatively thick glass slab and subsequently redrawing it to a required thickness. The resulting sheets commonly possess undesired centerline ripples and thick edges. We present a mathematical model in which a viscous sheet undergoes redraw in the direction of gravity, and show that, in a sufficiently strong gravitational field, buckling is driven by compression in a region near the bottom of the sheet, and limited by viscous resistance to stretching of the sheet. We use asymptotic analysis in the thin-sheet, low-Reynolds-number limit to determine the centerline profile and growth rate of such a viscous sheet.

Eliminating Heavy Metals from Water with NanoSheet Minerals as Adsorbents

Directory of Open Access Journals (Sweden)

Shaoxian Song

2017-12-01

Full Text Available Heavy metals usually referred to those with atomic weights ranging from 63.5 to 200.6. Because of natural-mineral dissolution and human activities such as mining, pesticides, fertilizer, metal planting and batteries manufacture, etc., these heavy metals, including zinc, copper, mercury, lead, cadmium and chromium have been excessively released into water courses, like underground water, lake and river, etc. The ingestion of the heavy metals-contaminated water would raise serious health problems to human beings even at a low concentration. For instance, lead can bring human beings about barrier to the normal function of kidney, liver and reproductive system, while zinc can cause stomach cramps, skin irritations, vomiting and anemia. Mercury is a horrible neurotoxin that may result in damages to the central nervous system, dysfunction of pulmonary and kidney, chest and dyspnea. Chromium (VI has been proved can cause many diseases ranging from general skin irritation to severe lung carcinoma. Accordingly, the World Health Organization announced the maximum contaminant levels (MCL for the heavy metals in drinking water. There are numerous processes for eliminating heavy metals from water in order to provide citizens safe drinking water, including precipitation, adsorption, ion exchange, membrane separation and biological treatment, etc. Adsorption is considered as a potential process for deeply removing heavy metals, in which the selection of adsorbents plays a predominant role. Nano-sheet minerals as the adsorbents are currently the hottest researches in the field. They are obtained from layered minerals, such as montmorillonite, graphite and molybdenite, through the processing of intercalation, electrochemical and mechanical exfoliation, etc. Nano-sheet minerals are featured by their large specific surface area, relatively low costs and active adsorbing sites, leading to be effective and potential adsorbents for heavy metals removal from water

What Governs Friction of Silicon Oxide in Humid Environment: Contact Area between Solids, Water Meniscus around the Contact, or Water Layer Structure?

Science.gov (United States)

Chen, Lei; Xiao, Chen; Yu, Bingjun; Kim, Seong H; Qian, Linmao

2017-09-26

In order to understand the interfacial parameters governing the friction force (F t ) between silicon oxide surfaces in humid environment, the sliding speed (v) and relative humidity (RH) dependences of F t were measured for a silica sphere (1 μm radius) sliding on a silicon oxide (SiO x ) surface, using atomic force microscopy (AFM), and analyzed with a mathematical model describing interfacial contacts under a dynamic condition. Generally, F t decreases logarithmically with increasing v to a cutoff value below which its dependence on interfacial chemistry and sliding condition is relatively weak. Above the cutoff value, the logarithmic v dependence could be divided into two regimes: (i) when RH is lower than 50%, F t is a function of both v and RH; (ii) in contrast, at RH ≥ 50%, F t is a function of v only, but not RH. These complicated v and RH dependences were hypothesized to originate from the structure of the water layer adsorbed on the surface and the water meniscus around the annulus of the contact area. This hypothesis was tested by analyzing F t as a function of the water meniscus area (A m ) and volume (V m ) estimated from a thermally activated water-bridge formation model. Surprisingly, it was found that F t varies linearly with V m and correlates poorly with A m at RH contact under ambient conditions.

Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture application type thin film solar cells with new structure (development of technologies to manufacture amorphous silicon and thin film poly-crystal silicon hybrid thin film solar cells); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

Research and development was performed with an objective to manufacture amorphous silicon and thin film poly-crystal silicon hybrid solar cells with large area and at low cost, being a high-efficiency next generation solar cell. The research was performed based on a principle that low-cost substrates shall be used, that a manufacturing process capable of forming amorphous silicon films with large area shall be based on, and that silicon film with as thin as possible thickness shall be used. Fiscal 1997 has started research and development on making the cells hybrid with amorphous silicon cells. As a result of the research and development, such achievements have been attained as using texture structure on the rear layer in thin poly-crystal silicon film solar cells with a thickness of two microns, and having achieved conversion efficiency of 10.1% by optimizing the junction interface forming conditions. A photo-deterioration test was carried out on hybrid cells which combine the thin poly-crystal silicon film cells having STAR structure with the amorphous silicon cells. Stabilization efficiency of 11.5% was attained after light has been irradiated for 500 hours or longer. (NEDO)

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Detailed geomorphological map sheet Bela Palanka at scale 1:100,000

Directory of Open Access Journals (Sweden)

Menković Ljubomir

2011-01-01

Full Text Available The Geomorphological Map Sheet Bela Palanka is a graphical representation of landforms in the area covered by the Topographical Map Sheet Bela Palanka at scale 1:100,000. The map is published in 2008 by the Serbian Academy of Sciences and Arts (SASA and the SASA Geodynamics Board. It is the first detailed geomorphological map edited in Serbia. This paper presents the methods used in preparing the geomorphological map, the contents and the mode of data presentation, geologic structure, genetic types of landforms and the subtypes, and the geomorphological history since the Neogene.

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

Implications of changing scattering properties on Greenland ice sheet volume change from Cryosat-2 altimetry

DEFF Research Database (Denmark)

Simonsen, Sebastian Bjerregaard; Sørensen, Louise Sandberg

2017-01-01

) in the elevation change algorithm, to correct for temporal changes in the ratio between surface- and volume-scatter in Cryosat-2 observations. We present elevation and volume changes for the Greenland ice sheet in the period from 2010 until 2014. The waveform parameters considered here are the backscatter...... waveform parameters to be applicable for correcting for changes in volume scattering. The best results in the Synthetic Aperture Radar Interferometric mode area of the GrIS are found when applying only the backscatter correction, whereas the best result in the Low Resolution Mode area is obtained by only......Long-term observations of surface elevation change of the Greenland ice sheet (GrIS) is of utmost importance when assessing the state of the ice sheet. Satellite radar altimetry offers a long time series of data over the GrIS, starting with ERS-1 in 1991. ESA's Cryosat-2 mission, launched in 2010...

Photocatalytic perfermance of sandwich-like BiVO_4 sheets by microwave assisted synthesis

International Nuclear Information System (INIS)

Liu, Suqin; Tang, Huiling; Zhou, Huan; Dai, Gaopeng; Wang, Wanqiang

2017-01-01

Graphical abstract: Sandwich-like BiVO_4 sheets were successfully synthesized via a facile microwave-assisted method. The as-prepared samples exhibit a high activity for the degradation of methyl orange under visible light irradiation. - Highlights: • Sandwich-like BiVO_4 sheets were synthesized by a facile microwave-assisted method. • The presence of PEG-10000 plays a critical role in the formation of BiVO_4 sheets. • Ostwald ripening is the primary driving force for the formation of sandwich-like BiVO_4. • The sandwich-like BiVO_4 sheets exhibit a high visible-light photocatalytic activity. - Abstract: Sandwich-like BiVO_4 sheets were successfully synthesized in an aqueous solution containing bismuth nitrate, ammonium metavanadate and polyethylene glycol with a molecular weight of 10,000 (PEG-10000) using a facile microwave-assisted method. The as-prepared samples were characterized by scanning electron microscopy, N_2 adsorption-desorption, X-ray diffraction, X-ray photoelectron spectroscopy (XPS), and UV–vis diffuse reflectance spectroscopy. The results show that the presence of PEG-10000 plays a critical role in the formation of BiVO_4 sheets, and Ostwald ripening is the primary driving force for the formation of sandwich-like structures. The sandwich-like BiVO_4 sheets exhibit a high activity for the degradation of methyl orange under visible light irradiation (λ ≥ 420 nm). The enhancement of photocatalytic activity of sandwich-like BiVO_4 sheets can be attributed to its large surface area over the irregular BiVO_4 particles.

Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

International Nuclear Information System (INIS)

Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

2012-01-01

Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al 2 O 3 ) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

Ohm's law for a current sheet

Science.gov (United States)

Lyons, L. R.; Speiser, T. W.

1985-01-01

The paper derives an Ohm's law for single-particle motion in a current sheet, where the magnetic field reverses in direction across the sheet. The result is considerably different from the resistive Ohm's law often used in MHD studies of the geomagnetic tail. Single-particle analysis is extended to obtain a self-consistency relation for a current sheet which agrees with previous results. The results are applicable to the concept of reconnection in that the electric field parallel to the current is obtained for a one-dimensional current sheet with constant normal magnetic field. Dissipated energy goes directly into accelerating particles within the current sheet.

Silicon Analysis of Tank 8F and Tank 40H Turbidity Samples

International Nuclear Information System (INIS)

Wilmarth, W.R.

2001-01-01

The need for silicon measurements in the field exists and can enhance the scheduling of waste transfers in both F- and H-Area Tank Farms. This report examines the use of field turbidity measurements as an at-line method to ensure that entrainment of silicon-bearing sludge materials are minimized

A fax-machine amorphous silicon sensor for X-ray detection

Energy Technology Data Exchange (ETDEWEB)

Alberdi, J. [Association EURATOM/CIEMAT, Madrid (Spain); Barcala, J.M. [Association EURATOM/CIEMAT, Madrid (Spain); Chvatchkine, V. [Association EURATOM/CIEMAT, Madrid (Spain); Ioudine, I. [Association EURATOM/CIEMAT, Madrid (Spain); Molinero, A. [Association EURATOM/CIEMAT, Madrid (Spain); Navarrete, J.J. [Association EURATOM/CIEMAT, Madrid (Spain); Yuste, C. [Association EURATOM/CIEMAT, Madrid (Spain)

1996-10-01

Amorphous silicon detectors have been used, basically, as solar cells for energetics applications. As light detectors, linear sensors are used in fax and photocopier machines because they can be built with a large size, low price and have a high radiation hardness. Due to these performances, amorphous silicon detectors have been used as radiation detectors, and, presently, some groups are developing matrix amorphous silicon detectors with built-in electronics for medical X-ray applications. Our group has been working on the design and development of an X-ray image system based on a commercial fax linear amorphous silicon detector. The sensor scans the selected area and detects light produced by the X-ray in a scintillator placed on the sensor. Image-processing software produces a final image with better resolution and definition. (orig.).

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Study on photon sensitivity of silicon diodes related to materials used for shielding

International Nuclear Information System (INIS)

Moiseev, T.

1999-01-01

Large area silicon diodes used in electronic neutron dosemeters have a significant over-response to X- and gamma-rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diode's active area and strongly affects the neutron sensitivity of such dosemeters. Since silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon-induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low-energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X- and gamma rays energy range is proposed by designing a composed photon filter. (author)

Study on Photon Sensitivity of Silicon Diodes Related to Materials Used for Shielding

International Nuclear Information System (INIS)

Moiseev, T.

2000-01-01

Large area Silicon diodes used in electronic neutron dosemeters have a significant over-response to X and gamma rays, highly non-linear at photon energies below 200 keV. This over-response to photons is proportional to the diodes active area and strongly affects the neutron sensitivity of such dosemeters. Since Silicon diodes are sensitive to light and electromagnetic fields, most diode detector assemblies are provided with a shielding, sometimes also used as radiation filter. In this paper, the influence of materials covering the diode's active area is investigated using the MCNP-4A code by estimating the photon induced pulses in a typical silicon wafer (300 μm thickness and 1 cm diameter) when provided with a front case cover. There have been simulated small-size diode front covers made of several materials with low neutron interaction cross-sections like aluminium, TEFLON, iron and lead. The estimated number of induced pulses in the silicon wafer is calculated for each type of shielding at normal photon incidence for several photon energies from 9.8 keV up to 1.15 MeV and compared with that in a bare silicon wafer. The simulated pulse height spectra show the origin of the photon induced pulses in silicon for each material used as protective cover: the photoelectric effect for low Z front case materials at low energy incident photons (up to about 65 keV) and the Compton and build-up effects for high Z case materials at higher photon energies. A simple means to lower and flatten the photon response of silicon diodes over an extended X and gamma rays energy range is proposed by designing a composed photon filter. (author)

Slim edges in double-sided silicon 3D detectors

International Nuclear Information System (INIS)

Povoli, M; Dalla Betta, G-F; Bagolini, A; Boscardin, M; Giacomini, G; Vianello, E; Zorzi, N

2012-01-01

Minimization of the insensitive edge area is one of the key requirements for silicon radiation detectors to be used in future silicon trackers. In 3D detectors this goal can be achieved with the active edge, at the expense of a high fabrication process complexity. In the framework of the ATLAS 3D sensor collaboration, we produced modified 3D silicon sensors with a double-sided technology. While this approach is not suitable to obtain active edges, because it does not use a support wafer, it allows for a new type of edge termination, the slim edge. In this paper we report on the development of the slim edge, from numerical simulations to design and testing, proving that it works effectively without increasing the fabrication complexity of silicon 3D detectors, and that it could be further optimized to reduce the insensitive edge region to less than 100 μm.

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Coupled Northern Hemisphere permafrost-ice-sheet evolution over the last glacial cycle

Science.gov (United States)

Willeit, M.; Ganopolski, A.

2015-09-01

Permafrost influences a number of processes which are relevant for local and global climate. For example, it is well known that permafrost plays an important role in global carbon and methane cycles. Less is known about the interaction between permafrost and ice sheets. In this study a permafrost module is included in the Earth system model CLIMBER-2, and the coupled Northern Hemisphere (NH) permafrost-ice-sheet evolution over the last glacial cycle is explored. The model performs generally well at reproducing present-day permafrost extent and thickness. Modeled permafrost thickness is sensitive to the values of ground porosity, thermal conductivity and geothermal heat flux. Permafrost extent at the Last Glacial Maximum (LGM) agrees well with reconstructions and previous modeling estimates. Present-day permafrost thickness is far from equilibrium over deep permafrost regions. Over central Siberia and the Arctic Archipelago permafrost is presently up to 200-500 m thicker than it would be at equilibrium. In these areas, present-day permafrost depth strongly depends on the past climate history and simulations indicate that deep permafrost has a memory of surface temperature variations going back to at least 800 ka. Over the last glacial cycle permafrost has a relatively modest impact on simulated NH ice sheet volume except at LGM, when including permafrost increases ice volume by about 15 m sea level equivalent in our model. This is explained by a delayed melting of the ice base from below by the geothermal heat flux when the ice sheet sits on a porous sediment layer and permafrost has to be melted first. Permafrost affects ice sheet dynamics only when ice extends over areas covered by thick sediments, which is the case at LGM.

Coupled Northern Hemisphere permafrost–ice-sheet evolution over the last glacial cycle

Directory of Open Access Journals (Sweden)

M. Willeit

2015-09-01

Full Text Available Permafrost influences a number of processes which are relevant for local and global climate. For example, it is well known that permafrost plays an important role in global carbon and methane cycles. Less is known about the interaction between permafrost and ice sheets. In this study a permafrost module is included in the Earth system model CLIMBER-2, and the coupled Northern Hemisphere (NH permafrost–ice-sheet evolution over the last glacial cycle is explored. The model performs generally well at reproducing present-day permafrost extent and thickness. Modeled permafrost thickness is sensitive to the values of ground porosity, thermal conductivity and geothermal heat flux. Permafrost extent at the Last Glacial Maximum (LGM agrees well with reconstructions and previous modeling estimates. Present-day permafrost thickness is far from equilibrium over deep permafrost regions. Over central Siberia and the Arctic Archipelago permafrost is presently up to 200–500 m thicker than it would be at equilibrium. In these areas, present-day permafrost depth strongly depends on the past climate history and simulations indicate that deep permafrost has a memory of surface temperature variations going back to at least 800 ka. Over the last glacial cycle permafrost has a relatively modest impact on simulated NH ice sheet volume except at LGM, when including permafrost increases ice volume by about 15 m sea level equivalent in our model. This is explained by a delayed melting of the ice base from below by the geothermal heat flux when the ice sheet sits on a porous sediment layer and permafrost has to be melted first. Permafrost affects ice sheet dynamics only when ice extends over areas covered by thick sediments, which is the case at LGM.

Adjustable focus laser sheet module for generating constant maximum width sheets for use in optical flow diagnostics

International Nuclear Information System (INIS)

Hult, J; Mayer, S

2011-01-01

A general design of a laser light sheet module with adjustable focus is presented, where the maximum sheet width is preserved over a fixed region. In contrast, conventional focusing designs are associated with a variation in maximum sheet width with focal position. A four lens design is proposed here, where the first three lenses are employed for focusing, and the last for sheet expansion. A maximum sheet width of 1100 µm was maintained over a 50 mm long distance, for focal distances ranging from 75 to 500 mm, when a 532 nm laser beam with a beam quality factor M 2 = 29 was used for illumination

Sustained mass loss of the northeast Greenland ice sheet triggered by regional warming

DEFF Research Database (Denmark)

Khan, Shfaqat Abbas; Kjaer, Kurt H.; Bevis, Michael

2014-01-01

The Greenland ice sheet has been one of the largest contributors to global sea-level rise over the past 20 years, accounting for 0.5 mm yr(-1) of a total of 3.2 mm yr(-1). A significant portion of this contribution is associated with the speed-up of an increased number of glaciers in southeast...... and northwest Greenland. Here, we show that the northeast Greenland ice stream, which extends more than 600 km into the interior of the ice sheet, is now undergoing sustained dynamic thinning, linked to regional warming, after more than a quarter of a century of stability. This sector of the Greenland ice sheet...... is of particular interest, because the drainage basin area covers 16% of the ice sheet (twice that of Jakobshavn Isbrae) and numerical model predictions suggest no significant mass loss for this sector, leading to an under-estimation of future global sea-level rise. The geometry of the bedrock and monotonic trend...

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

Science.gov (United States)

Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

2009-04-01

This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

Sponge fossils of Middle Dnieper River Upper Eocenian deposits (geological survey sheet area «Kobelyaki»

Directory of Open Access Journals (Sweden)

Stephanska T.A.

2015-09-01

Full Text Available For the first time sponge spicules of the Paleogene on the geological survey sheet area «Kobelyaki» were studied. Using artificial classification M.M. Ivanik (2003 45 taxa spicules were found in rocks. Morphological types spicules were defined. In the complexes following megascleres of «soft» Demospongiae are dominant: pro-, plagio-, ortho-, dicho-, anatriaenes, caltrops, smooth and echinated oxeas, subtylostyls, strongyls, ophioxeas. Diaenes, monenes, caltrops with reduced beam (olimtriaenes, are less common. Microscleres are numerous: sterrasters, sphaerasters, oxysphaerasters, oxyasters. Fragments of dyctional gratings without lychnisks and free spicules of hexactinellid sponges are frequent (pentactines, hexactines. Megascleres of lithistid sponges (phyllotriaenes, tetracrepid desmas, triders, megaclones, dicranoclones are relatively few. The palaeocenosis structure that existed in the Obukhov Sea on this area, it was found by morphological analysis of sponges spicules. In the Obukhov time following sponges dominated here: «soft» sponges with unrelated skeleton that belonged to the class Demospongiae (orders Poecilosclerida, Astrophorida and families Geodiidae, Pachastrellidae, Ancorinidae, Calthropellidae, Tethyidae, Crellidae and hexactinellids of class Hexactinellida (orders Hexactinosida and Lyssacinosida. А few sponges spicules (belonged to the subclass Lithistida, families Corallistidae, Theonellidae, Phymaraphiniidae, Chenendoporidae, Pleromidae and lack lithistid skeletal gratings fragments in the studied complexes may indicate a desmas transfer from neighboring, a shallow Obukhov stations, which were confined to the nearby slope of the Ukrainian Shield. On the base of sponge spicules studying the Late Eocene (Obukhov age of surrounding deposits is proved. spongе spicula, Upper Eocene, Obuchovian Suite, Middle Dnieper region.

Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

International Nuclear Information System (INIS)

Li, Da; Kunz, Thomas; Wolf, Nadine; Liebig, Jan Philipp; Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard; Göken, Mathias; Brabec, Christoph J.

2015-01-01

Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area on the graphite substrate. The optical properties of the SiN x /a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN x /a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN x /a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

Conciliating surface superhydrophobicities and mechanical strength of porous silicon films

Science.gov (United States)

Wang, Fuguo; Zhao, Kun; Cheng, Jinchun; Zhang, Junyan

2011-01-01

Hydrophobic surfaces on Mechanical stable macroporous silicon films were prepared by electrochemical etching with subsequent octadecyltrichlorosilane (OTS) modification. The surface morphologies were controlled by current densities and the mechanical properties were adjusted by their corresponding porosities. Contrast with the smooth macroporous silicon films with lower porosities (34.1%) and microporous silicon with higher porosities (97%), the macroporous film with a rough three-dimension (3D) surface and a moderate pore to cross-section area ratio (37.8%, PSi2‧) exhibited both good mechanical strength (Yong' modulus, shear modulus and collapse strength are 64.2, 24.1 and 0.32 GPa, respectively) and surface superhydrophobicity (water contact angle is 158.4 ± 2° and sliding angle is 2.7 ± 1°). This result revealed that the surface hydrophobicities (or the surface roughness) and mechanical strength of porous films could be conciliated by pore to cross-section area ratios control and 3D structures construction. Thus, the superhydrophobic surfaces on mechanical stable porous films could be obtained by 3D structures fabrication on porous film with proper pore to cross-section area ratios.

Collisionless current sheet equilibria

Science.gov (United States)

Neukirch, T.; Wilson, F.; Allanson, O.

2018-01-01

Current sheets are important for the structure and dynamics of many plasma systems. In space and astrophysical plasmas they play a crucial role in activity processes, for example by facilitating the release of magnetic energy via processes such as magnetic reconnection. In this contribution we will focus on collisionless plasma systems. A sensible first step in any investigation of physical processes involving current sheets is to find appropriate equilibrium solutions. The theory of collisionless plasma equilibria is well established, but over the past few years there has been a renewed interest in finding equilibrium distribution functions for collisionless current sheets with particular properties, for example for cases where the current density is parallel to the magnetic field (force-free current sheets). This interest is due to a combination of scientific curiosity and potential applications to space and astrophysical plasmas. In this paper we will give an overview of some of the recent developments, discuss their potential applications and address a number of open questions.

Sediment plume response to surface melting and supraglacial lake drainages on the Greenland ice sheet

DEFF Research Database (Denmark)

Chu, Vena W.; Smith, Laurence C; Rennermalm, Asa K.

2009-01-01

) supraglacial lake drainage events from MODIS. Results confirm that the origin of the sediment plume is meltwater release from the ice sheet. Interannual variations in plume area reflect interannual variations in surface melting. Plumes appear almost immediately with seasonal surface-melt onset, provided...... the estuary is free of landfast sea ice. A seasonal hysteresis between melt extent and plume area suggests late-season exhaustion in sediment supply. Analysis of plume sensitivity to supraglacial events is less conclusive, with 69% of melt pulses and 38% of lake drainage events triggering an increase in plume...... area. We conclude that remote sensing of sediment plume behavior offers a novel tool for detecting the presence, timing and interannual variability of meltwater release from the ice sheet....

Progress Report 15, December 1979-April 1980, and proceedings of the fifteenth Project Integration Meeting

Energy Technology Data Exchange (ETDEWEB)

1980-01-01

Progress made by the Low-Cost Solar Array Project during the period December 1979 to April 1980 is reported. Reports on project analysis and integration; technology development in silicon material, large-area silicon sheet and encapsulation; production process and equipment development; engineering; and operations are included. Also, a report on, and copies of visual presentations made at, the Project Integration Meeting held April 2 and 3, 1980, are included.

Progress Report 16 for the period April-September 1980, and the proceedings of the 16th Project Integration Meeting

Energy Technology Data Exchange (ETDEWEB)

McDonald, R.R.

1980-01-01

Progress made by the Low-Cost Solar Array Project during the period April to September 1980, is reported in detail. Progress on project analysis and integration; technology development in silicon material, large-area silicon sheet and encapsulation; production process and equipment development; engineering, and operations is described. A report on, and copies of visual presentations made at, the Project Integration Meeting held September 24 and 25, 1980 are included.