WorldWideScience

Sample records for amorphous silicon alloys

  1. Corrosion resistance and cytocompatibility of biodegradable surgical magnesium alloy coated with hydrogenated amorphous silicon.

    Science.gov (United States)

    Xin, Yunchang; Jiang, Jiang; Huo, Kaifu; Tang, Guoyi; Tian, Xiubo; Chu, Paul K

    2009-06-01

    The fast degradation rates in the physiological environment constitute the main limitation for the applications of surgical magnesium alloys as biodegradable hard-tissue implants. In this work, a stable and dense hydrogenated amorphous silicon coating (a-Si:H) with desirable bioactivity is deposited on AZ91 magnesium alloy using magnetron sputtering deposition. Raman spectroscopy and Fourier transform infrared spectroscopy reveal that the coating is mainly composed of hydrogenated amorphous silicon. The hardness of the coated alloy is enhanced significantly and the coating is quite hydrophilic as well. Potentiodynamic polarization results show that the corrosion resistance of the coated alloy is enhanced dramatically. In addition, the deterioration process of the coating in simulated body fluids is systematically investigated by open circuit potential evolution and electrochemical impedance spectroscopy. The cytocompatibility of the coated Mg is evaluated for the first time using hFOB1.19 cells and favorable biocompatibility is observed. 2008 Wiley Periodicals, Inc.

  2. Hydrogenated amorphous silicon-selenium alloys - a short journey through parameter space

    International Nuclear Information System (INIS)

    Al-Dallal, S.; Al-Alawi, S.M.; Aljishi, S.

    1999-01-01

    Hydrogenated amorphous silicon-selenium alloy thin films were grown by capacity coupled radio frequency glow discharge decomposition of (SiH/sub 4/ + He) and (H/sub 2/S + He) gas mixtures. In this work we report on a study to correlate the deposition parameters of a-Si, Se:H thin films with its optical, electronic and spectroscopic properties. The alloy composition was varied by changing the gas volume ratio R/sub v/ = [H/sub 2/Se]/[SiH/sub 4/]. The films are characterized via infrared spectroscopy, photoconductivity, photoluminescence, constant current method and conductivity measurements. (author)

  3. Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

    CERN Document Server

    Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

    2000-01-01

    We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

  4. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  5. Iron-based amorphous alloys and methods of synthesizing iron-based amorphous alloys

    Science.gov (United States)

    Saw, Cheng Kiong; Bauer, William A.; Choi, Jor-Shan; Day, Dan; Farmer, Joseph C.

    2016-05-03

    A method according to one embodiment includes combining an amorphous iron-based alloy and at least one metal selected from a group consisting of molybdenum, chromium, tungsten, boron, gadolinium, nickel phosphorous, yttrium, and alloys thereof to form a mixture, wherein the at least one metal is present in the mixture from about 5 atomic percent (at %) to about 55 at %; and ball milling the mixture at least until an amorphous alloy of the iron-based alloy and the at least one metal is formed. Several amorphous iron-based metal alloys are also presented, including corrosion-resistant amorphous iron-based metal alloys and radiation-shielding amorphous iron-based metal alloys.

  6. Novel Amorphous Fe-Zr-Si(Cu) Boron-free Alloys

    Science.gov (United States)

    Kopcewicz, M.; Grabias, A.; Latuch, J.; Kowalczyk, M.

    2010-07-01

    Novel amorphous Fe80(ZrxSi20-x-y)Cuy boron-free alloys, in which boron was completely replaced by silicon as a glass forming element, have been prepared in the form of ribbons by a melt quenching technique. The X-ray diffraction and Mössbauer spectroscopy measurements revealed that the as-quenched ribbons with the composition of x = 6-10 at. % and y = 0, 1 at. % are predominantly amorphous. DSC measurements allowed the estimation of the crystallization temperatures of the amorphous alloys. The soft magnetic properties have been studied by the specialized rf-Mössbauer technique in which the spectra were recorded during an exposure of the samples to the rf field of 0 to 20 Oe at 61.8 MHz. Since the rf-collapse effect observed is very sensitive to the local anisotropy fields it was possible to evaluate the soft magnetic properties of amorphous alloys studied. The rf-Mössbauer studies were accompanied by the conventional measurements of the quasi-static hysteresis loops from which the magnetization and coercive fields were estimated. It was found that amorphous Fe-Zr-Si(Cu) alloys are magnetically very soft, comparable with those of the conventional amorphous B-containing Fe-based alloys.

  7. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  8. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Saharoui; Mughal, Asad Jahangir

    2015-01-01

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  9. Irradiation of electron with high energy induced micro-crystallization of amorphous silicon

    International Nuclear Information System (INIS)

    Zhong Yule; Huang Junkai; Liu Weiping; Li Jingna

    2001-01-01

    Amorphous silicon is amorphous alloy of Si-H. It is random network of silicon with some hydrogen. And its structure has many unstable bonds as weak bonds of Si-Si and distortion bonds of all kinds. The bonds was broken or was out of shape by light and electrical ageing. It induced increase of defective state that causes character of material going to bad. This drawback will be overcome after micro-crystallization of amorphous silicon. It was discovered that a-Si:H was micro-crystallized by irradiated of electrons with energy of 0.3-0.5 MeV, density of electronic beam of 1.3 x 10 19 cm -1 s -1 and irradiated time of 10-600 s. Size of grain is 10-20 nm. Thick of microcrystalline lager is 25-250 nm

  10. Positrons in amorphous alloys

    International Nuclear Information System (INIS)

    Moser, Pierre.

    1981-07-01

    Positron annihilation techniques give interesting informations about ''empty spaces'' in amorphous alloys. The results of an extensive research work on the properties of either pre-existing or irradiation induced ''empty spaces'' in four amorphous alloys are presented. The pre-existing empty spaces appear to be small vacancy-like defects. The irradiation induced defects are ''close pairs'' with widely distributed configurations. There is a strong interaction between vacancy like and interstitial like components. A model is proposed, which explains the radiation resistance mechanism of the amorphous alloys. An extensive joint research work to study four amorphous alloys, Fe 80 B 20 ,Fe 40 Ni 40 P 14 B 6 , Cu 50 Ti 50 , Pd 80 Si 20 , is summarized

  11. Lithium concentration dependent structure and mechanics of amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sitinamaluwa, H. S.; Wang, M. C.; Will, G.; Senadeera, W.; Yan, C., E-mail: c2.yan@qut.edu.au [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology (QUT), Brisbane QLD 4001 (Australia); Zhang, S. [Centre for Clean Environment and Energy, Environmental Futures Research Institute and Griffith School of Environment, Gold Coast Campus, Griffith University, QLD 4222 (Australia)

    2016-06-28

    A better understanding of lithium-silicon alloying mechanisms and associated mechanical behavior is essential for the design of Si-based electrodes for Li-ion batteries. Unfortunately, the relationship between the dynamic mechanical response and microstructure evolution during lithiation and delithiation has not been well understood. We use molecular dynamic simulations to investigate lithiated amorphous silicon with a focus to the evolution of its microstructure, phase composition, and stress generation. The results show that the formation of Li{sub x}Si alloy phase is via different mechanisms, depending on Li concentration. In these alloy phases, the increase in Li concentration results in reduction of modulus of elasticity and fracture strength but increase in ductility in tension. For a Li{sub x}Si system with uniform Li distribution, volume change induced stress is well below the fracture strength in tension.

  12. Glow discharge preparation and electrooptical characterisation of amorphous silicon alloys for solar cells. Preparacion por descarga luminiscente y caracterizacion electrooptica de aleaciones de silicio amorfo para celulas solares

    Energy Technology Data Exchange (ETDEWEB)

    Carabe, J

    1990-11-01

    A study is presented, focused on the preparation and characterisation of hydrogenated amorphous silicon alloy thin films for their application as p type window layers in pin silicon solar cells. The preparation technique used was radio frequency glow discharge. The samples were characterised optically (visible, near infrared and infrared absorption spectrophotometry) and electrically (dark and photoconductivities at ambient temperature and as functions of temperature). The influence of each of the preparation parameters on film properties has been systematically studied. The results have been analysed according to the existing models. Chapter 1 is an introduction to the material in question and its photovoltaic applications. Chapter 2 describes the experimental procedure used. Capter 3 shows and discusses the most relevant results obtained in the study of intrinsic amorphous silicon, p type amorphous silicon and p type amorphous silicon carbide window layers, with special emphasis on the influence of the use of an alternative dopant gas: boron trifluoride. Finally, chapter 4 summarises the most relevant conclusions drawn from this research work. (Author)

  13. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  14. Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of amorphous solar cells (Theoretical research on amorphous silicon electronic states by computer-aided simulation); 1984 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Keisanki simulation ni yoru amorphous silicon no denshi jotai no rironteki kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1985-04-01

    Research on the basic physical properties of amorphous silicon materials and for the development of materials for thermally stable amorphous silicon is conducted through theoretical reasoning and computer-aided simulation. In the effort at achieving a high conversion efficiency using an amorphous silicon alloy, a process of realizing desired photoabsorption becomes possible when the correlation between the atomic structure and the photoabsorption coefficient is clearly established and the atomic structure is manipulated. In this connection, analytical studies are conducted to determine how microscopic structures are reflected on macroscopic absorption coefficients. In the computer-aided simulation, various liquid structures and amorphous structures are worked out, which is for the atom-level characterization of structures with topological disturbances, such as amorphous structures. Glass transition is simulated using a molecular kinetic method, in particular, and the melting of crystals, crystallization of liquids, and vitrification (conversion into the amorphous state) are successfully realized, though in a computer-aided simulation, for the first time in the world. (NEDO)

  15. Light-induced metastable structural changes in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fritzsche, H. [Univ. of Chicago, IL (United States)

    1996-09-01

    Light-induced defects (LID) in hydrogenated amorphous silicon (a-Si:H) and its alloys limit the ultimate efficiency of solar panels made with these materials. This paper reviews a variety of attempts to find the origin of and to eliminate the processes that give rise to LIDs. These attempts include novel deposition processes and the reduction of impurities. Material improvements achieved over the past decade are associated more with the material`s microstructure than with eliminating LIDs. We conclude that metastable LIDs are a natural by-product of structural changes which are generally associated with non-radiative electron-hole recombination in amorphous semiconductors.

  16. Silicon Alloying On Aluminium Based Alloy Surface

    International Nuclear Information System (INIS)

    Suryanto

    2002-01-01

    Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

  17. Amorphous silicon ionizing particle detectors

    Science.gov (United States)

    Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  18. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  19. Performance of single wire earth return transformers with amorphous alloy core in a rural electric energy distribution system

    Directory of Open Access Journals (Sweden)

    Benedito Antonio Luciano

    2012-10-01

    Full Text Available In this paper are presented some considerations about the performance of single wire earth return amorphous alloy core transformers in comparison with conventional silicon steel sheets cores transformers used in rural electric energy distribution network. It has been recognized that amorphous metal core transformers improve electrical power distribution efficiency by reducing transformer core losses. This reduction is due to some electromagnetic properties of the amorphous alloys such as: high magnetic permeability, high resistivity, and low coercivity. Experimental results obtained with some single-phase, 60 Hz, 5 kVA amorphous core transformers installed in a rural area electric distribution system in Northern Brazil have been confirming their superior performance in comparison to identical nominal rated transformers built with conventional silicon steel cores, particularly with regard to the excitation power and to the no-load losses.

  20. Ab initio simulation of amorphous silicon

    International Nuclear Information System (INIS)

    Cooper, N.C.; McKenzie, D.R.; Goringe, C.M.

    1999-01-01

    Full text: A first-principles Car-Parrinello molecular dynamics simulation of amorphous silicon is presented. Density Functional Theory is used to describe the forces between the atoms in a 64 atom supercell which is periodically repeated throughout space in order to generate an infinite network of atoms (a good approximation to a real solid). A quench from the liquid phase is used to achieve a quenched amorphous structure, which is subjected to an annealing cycle to improve its stability. The final, annealed network is in better agreement with experiment than any previous simulation of amorphous silicon. Significantly, the predicted average first-coordination numbers of 3.56 and 3.84 for the quenched and annealed structures from this simulation agree very closely with the experimental values of 3.55 and 3.90 respectively, whereas all previous simulations yielded first coordination numbers greater than 4. This improved agreement in coordination numbers is important because it supports the experimental finding that dangling bonds (which are associated with under-coordinated atoms) are more prevalent than floating bonds (the strained, longer bond of a five coordinate atom) in pure amorphous silicon. Finally, the effect of adding hydrogen to amorphous silicon was investigated by specifically placing hydrogen atoms at the likely defect sites. After a structural relaxation to optimise the positions of these hydrogen atoms, the localised electronic states associated with these defects are absent. Thus hydrogen is responsible for removing these defect states (which are able to trap carriers) from the edge of the band gap of the amorphous silicon. These results confirm the widely held ideas about the effect of hydrogen in producing remarkable improvements in the electronic properties of amorphous silicon

  1. Salt Fog Testing Iron-Based Amorphous Alloys

    International Nuclear Information System (INIS)

    Rebak, Raul B.; Aprigliano, Louis F.; Day, S. Daniel; Farmer, Joseph C.

    2007-01-01

    Iron-based amorphous alloys are hard and highly corrosion resistant, which make them desirable for salt water and other applications. These alloys can be produced as powder and can be deposited as coatings on any surface that needs to be protected from the environment. It was of interest to examine the behavior of these amorphous alloys in the standard salt-fog testing ASTM B 117. Three different amorphous coating compositions were deposited on 316L SS coupons and exposed for many cycles of the salt fog test. Other common engineering alloys such as 1018 carbon steel, 316L SS and Hastelloy C-22 were also tested together with the amorphous coatings. Results show that amorphous coatings are resistant to rusting in salt fog. Partial devitrification may be responsible for isolated rust spots in one of the coatings. (authors)

  2. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng

    2009-01-14

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

  3. Anodic electrochemical treatment of amorphous alloys

    International Nuclear Information System (INIS)

    Isaev, N.I.; Yakovlev, V.B.; Osipov, Eh.K.; Isaev, A.V.; Trofimova, E.A.; Vasil'ev, V.Yu.

    1983-01-01

    The aim of the investigation is to reveal peculiarities of the process of anodic oxidation and properties of anode oxide films, formed on the surface of amorphous alloys. Amorphous alloys on the base of rectifying metals of Zr-Ni, Zr-Cu-Ni, Zr-Al-Ni, Zr-Cu-Sn, Zr-Al, Zr-Mo systems are studied. Electrolytes which do not dissolve or weakly dissolve oxide film, such as boric acid electrolyte (40-45 g/l H 3 BO 3 and 18 cm 3 /l of the 25% aqueous NH 4 OH solution) and 20% H 2 SO 4 solution, are used for oxidation. Results of investigations, carried out on amorphous alloys, contaning noticeable quantities of non-rectifying components - Cu, Ni, Sn, Fe, Mo etc - have shown that non-rectifying components harden a process of anodic oxidation and decrease the current efficiency. Amorphous alloys, containing only rectifying components are oxidated in anodic way, the regularities of film growth being similar to those obtained for crystalline materials

  4. Hot corrosion studies on nickel-based alloys containing silicon

    International Nuclear Information System (INIS)

    Kerr, T.W.; Simkovich, G.

    1976-01-01

    Alloys of Ni--Cr, Ni--Si and Ni--Cr--Si were oxidized and ''hot corroded'' in pure oxygen at 1000 0 C. In the oxidation experiments it was found that small amounts of either chromium or silicon in nickel increased the oxidation rates in comparison to pure nickel in accord with Wagner's parabolic oxidation theory. At high concentrations of the alloying elements the oxidation rates decreased due to the formation of oxide phases other than nickel oxide in the scale. Hot corrosion experiments were conducted on both binary and ternary alloys by oxidizing samples coated with 1.0 mg/cm 2 of Na 2 SO 4 in oxygen at 1000 0 C. In general it was found that high chromium and high silicon alloys displayed excellent resistance to the hot corrosion process gaining or losing less than 0.5 mg/cm 2 in 1800 min at temperature. Microprobe and x-ray diffraction studies of the alloy and the scale indicate that amorphous SiO 2 probably formed to aid in retarding both the oxidation and the hot corrosion process

  5. Challenges in amorphous silicon solar cell technology

    NARCIS (Netherlands)

    Swaaij, van R.A.C.M.M.; Zeman, M.; Korevaar, B.A.; Smit, C.; Metselaar, J.W.; Sanden, van de M.C.M.

    2000-01-01

    Hydrogenated amorphous silicon is nowadays extensively used for a range of devices, amongst others solar cells, Solar cell technology has matured over the last two decades and resulted in conversion efficiencies in excess of 15%. In this paper the operation of amorphous silicon solar cells is

  6. Inverted amorphous silicon solar cell utilizing cermet layers

    Science.gov (United States)

    Hanak, Joseph J.

    1979-01-01

    An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

  7. Amorphous silicon radiation detectors

    Science.gov (United States)

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  8. Transformation processes during annealing of Al-amorphous alloys

    International Nuclear Information System (INIS)

    Petrescu, N.; Petrescu, M.; Calin, M.; Jianu, A.D.; Fecioru, M.

    1993-01-01

    As the amorphous aluminum alloys represent the newest achievement in rapid solidification of Al-based high strength heat resistent materials, a study was undertaken on the amorphous alloys in the Al-RE-TM system, the rare-earth metal being a lanthanide mixture and the transition metal a Ni-Fe substitution in definite proportions. The decomposition on heating of the most highly alloyed amorphous alloy in the investigated series is characterized by differential thermal analysis, electron microscopy and X-ray diffraction. (orig.)

  9. Transformation processes during annealing of Al-amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Petrescu, N. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania)); Petrescu, M. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania)); Calin, M. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania)); Jianu, A.D. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania) IFTM-Bucharest (Romania)); Fecioru, M. (Polytechnic Inst. Bucharest, Faculty Materials Science and Engineering, Bucharest (Romania) DACIA Enterprise-Bucharest (Romania))

    1993-11-01

    As the amorphous aluminum alloys represent the newest achievement in rapid solidification of Al-based high strength heat resistent materials, a study was undertaken on the amorphous alloys in the Al-RE-TM system, the rare-earth metal being a lanthanide mixture and the transition metal a Ni-Fe substitution in definite proportions. The decomposition on heating of the most highly alloyed amorphous alloy in the investigated series is characterized by differential thermal analysis, electron microscopy and X-ray diffraction. (orig.).

  10. Amorphous silicon detectors in positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  11. Amorphous silicon detectors in positron emission tomography

    International Nuclear Information System (INIS)

    Conti, M.; Perez-Mendez, V.

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters ε 2 τ's are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs

  12. Moessbauer effect study on mechanically alloyed amorphous Fe1-xTix alloys

    International Nuclear Information System (INIS)

    Chen Hong; Xu Zuxiong; Ma Ruzhang; Zhao Zhongtao; Ping Jueyun

    1994-01-01

    Amorphous Fe 1-x Ti x (x = 0.50, 0.60) powders were produced by mechanical alloying from pure elemental powders in a vibratory ball-mill. X-ray diffraction (XRD) and Moessbauer effect (ME) were used to study the progress of amorphization and the property of hydrogen absorption in Fe-Ti alloys. The amorphization process and the properties of the amorphous phase are discussed. (orig.)

  13. Formation of iron disilicide on amorphous silicon

    Science.gov (United States)

    Erlesand, U.; Östling, M.; Bodén, K.

    1991-11-01

    Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

  14. Crystallization-induced plasticity of Cu-Zr containing bulk amorphous alloys

    International Nuclear Information System (INIS)

    Lee, Seok-Woo; Huh, Moo-Young; Fleury, Eric; Lee, Jae-Chul

    2006-01-01

    This study examined the parameter governing the plasticity observed in various Cu-Zr containing monolithic amorphous alloys. All the alloys were fully amorphous in their as-cast condition but exhibited different plastic strains. Microscopic observations of the quasi-statically compressed alloys showed abundant nanocrystallites in the amorphous matrices in the alloys that exhibited pronounced plasticity. On the other hand, insignificant changes in the microstructure were observed in the alloy that did not show plasticity. The mechanism for the formation of these deformation-induced nanocrystallites was examined from the viewpoints of thermodynamics and kinetics. The role of the deformation-induced nanocrystallites on the plasticity of the amorphous alloy was examined using high-resolution transmission electron microscopy. The results demonstrate that compressive loading facilitates nanocrystallization in monolithic Cu-Zr containing amorphous alloys, resulting in plasticity. The parameter governing the plasticity in these monolithic Cu-Zr containing amorphous alloys lies in the activation energy for the overall crystallization process

  15. Self-consistent modeling of amorphous silicon devices

    International Nuclear Information System (INIS)

    Hack, M.

    1987-01-01

    The authors developed a computer model to describe the steady-state behaviour of a range of amorphous silicon devices. It is based on the complete set of transport equations and takes into account the important role played by the continuous distribution of localized states in the mobility gap of amorphous silicon. Using one set of parameters they have been able to self-consistently simulate the current-voltage characteristics of p-i-n (or n-i-p) solar cells under illumination, the dark behaviour of field-effect transistors, p-i-n diodes and n-i-n diodes in both the ohmic and space charge limited regimes. This model also describes the steady-state photoconductivity of amorphous silicon, in particular, its dependence on temperature, doping and illumination intensity

  16. Polarization and resistivity measurements of post-crystallization changes in amorphous Fe-B-Si alloys

    International Nuclear Information System (INIS)

    Chattoraj, I.; Bhattamishra, A.K.; Mitra, A.

    1993-01-01

    The effects of grain growth and compositional changes on the electrochemical behavior and the resistivity of amorphous iron-boron-silicon (Fe 77.5 B 15 Si 7.5 ) alloys after crystallization were studied. Deterioration of the protective passive film was observed, along with increased annealing. Potentiodynamic polarization provided excellent information about microstructural and chemical changes. It was concluded that electrochemical measurements could be used in conjunction with resistivity measurements in direct studies of grain growth and chemical changes occurring in different phases of the devitrified alloy

  17. Excessively High Vapor Pressure of Al-based Amorphous Alloys

    Directory of Open Access Journals (Sweden)

    Jae Im Jeong

    2015-10-01

    Full Text Available Aluminum-based amorphous alloys exhibited an abnormally high vapor pressure at their approximate glass transition temperatures. The vapor pressure was confirmed by the formation of Al nanocrystallites from condensation, which was attributed to weight loss of the amorphous alloys. The amount of weight loss varied with the amorphous alloy compositions and was inversely proportional to their glass-forming ability. The vapor pressure of the amorphous alloys around 573 K was close to the vapor pressure of crystalline Al near its melting temperature, 873 K. Our results strongly suggest the possibility of fabricating nanocrystallites or thin films by evaporation at low temperatures.

  18. Plasma deposition of amorphous silicon-based materials

    CERN Document Server

    Bruno, Giovanni; Madan, Arun

    1995-01-01

    Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices.

  19. Development of shear bands in amorphous-crystalline metallic alloys

    International Nuclear Information System (INIS)

    Pozdnyakov, V.A.

    2004-01-01

    A theoretical study is made into conditions of shear band evolution in amorphous-crystalline alloys with various morphological types of structural constituents. The condition of shear band evolution in thin amorphous alloys in the interior of the crystalline matrix is obtained. It is shown that a scale effect exists which manifests itself in suppression of the process of localized plastic flow with amorphous alloy thickness decreasing down to the limit. The analysis of the condition for shear band evolution in an amorphous alloy with nanocrystalline inclusions is accomplished. The relationship of a critical stress of shear band evolution to a volume fraction of disperse crystal inclusions is obtained. A consideration is also given to the evolution of shear bands in the material containing amorphous and crystalline areas of micro meter size. For the alloy with the structure of this type conditions for propagation of localized flows by a relay race type mechanism are determined [ru

  20. Safety procedures used during the manufacturing of amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dickson, C R

    1987-01-01

    The Solarex Thin Film Division is a leader in the manufacturing of amorphous-silicon products for sale in domestic and foreign markets. Similarly, Solarex assumes a leadership role in recognizing the importance of safety in a manufacturing environment. Although many of the safety issues are similar to those in the semiconductor industry, this paper presents topics specific to amorphous silicon technology and the manufacturing ,f amorphous-silicon products. These topics are deposition of conducting transparent oxides (CTOs), amorphous silicon deposition, laser scribing, processing chemicals, fire prevention and administrative responsibilities.

  1. Superplasticity of amorphous alloy

    International Nuclear Information System (INIS)

    Levin, Yu.B.; Likhachev, V.L.; Sen'kov, O.N.

    1988-01-01

    Results of mechanical tests of Co 57 Ni 10 Fe 5 Si 11 B 17 amorphous alloy are presented and the effect of crystallization, occurring during deformation process, on plastic low characteristics is investiagted. Superplasticity of amorphous tape is investigated. It is shown, that this effect occurs only when during deformation the crystallization takes place. Process model, based on the usage disclination concepts about glass nature, is suggested

  2. Amorphization of Fe-based alloy via wet mechanical alloying assisted by PCA decomposition

    Energy Technology Data Exchange (ETDEWEB)

    Neamţu, B.V., E-mail: Bogdan.Neamtu@stm.utcluj.ro [Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641, Cluj-Napoca (Romania); Chicinaş, H.F.; Marinca, T.F. [Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641, Cluj-Napoca (Romania); Isnard, O. [Université Grenoble Alpes, Institut NEEL, F-38042, Grenoble (France); CNRS, Institut NEEL, 25 rue des martyrs, BP166, F-38042, Grenoble (France); Pană, O. [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath Street, 400293, Cluj-Napoca (Romania); Chicinaş, I. [Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641, Cluj-Napoca (Romania)

    2016-11-01

    Amorphization of Fe{sub 75}Si{sub 20}B{sub 5} (at.%) alloy has been attempted both by wet and dry mechanical alloying starting from a mixture of elemental powders. Powder amorphization was not achieved even after 140 hours of dry mechanical alloying. Using the same milling parameters, when wet mechanical alloying was used, the powder amorphization was achieved after 40 h of milling. Our assumption regarding the powder amorphization capability enhancement by contamination with carbon was proved by X-ray Photoelectron Spectroscopy (XPS) measurements which revealed the presence of carbon in the chemical composition of the wet mechanically alloyed sample. Using shorter milling times and several process control agents (PCA) (ethanol, oleic acid and benzene) with different carbon content it was proved that the milling duration required for powder amorphization is linked to the carbon content of the PCA. Differential Scanning Calorimetry (DSC), thermomagnetic (TG) and X-ray Diffraction (XRD) measurements performed to the heated samples revealed the fact that, the crystallisation occurs at 488 °C, thus leading to the formation of Fe{sub 3}Si and Fe{sub 2}B. Thermogravimetry measurements performed under H{sub 2} atmosphere, showed the same amount of contamination with C, which is about 2.3 wt%, for the amorphous samples regardless of the type of PCA. Saturation magnetisation of the wet milled samples decreases upon increasing milling time. In the case of the amorphous samples wet milled with benzene up to 20 h and with oleic acid up to 30 h, the saturation magnetisation has roughly the same value, indicating the same degree of contamination. The XRD performed on the samples milled using the same parameters, revealed that powder amorphization can be achieved even via dry milling, just by adding the equivalent amount of elemental C calculated from the TG plots. This proves that in this system by considering the atomic species which can contaminate the powder, they can be

  3. Ductile fracture surface morphology of amorphous metallic alloys

    NARCIS (Netherlands)

    Miskuf, J; Csach, K; Ocelik, [No Value; Bengus, VZ; Tabachnikova, ED; Duhaj, P; Ocelik, Vaclav

    1999-01-01

    Fracture surfaces of ductile failure of two types bulk amorphous metallic alloys were studied using quantitative and qualitative fractographic analysis. The observed fractographic behaviour of ductile failure in comparison with the ductile failure of amorphous alloy ribbons shows signs of the same

  4. Correlation of atomic packing with the boson peak in amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Yang, W. M. [State Key Laboratory for Geomechanics and Deep Underground Engineering, School of Mechanics and Civil Engineering, School of Sciences, China University of Mining and Technology, Xuzhou 221116 (China); Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); School of Materials Science and Engineering, Southeast University, Nanjing 211189 (China); Liu, H. S., E-mail: liuhaishun@126.com, E-mail: blshen@seu.edu.cn, E-mail: runweili@nimte.ac.cn, E-mail: jiangjz@zju.edu.cn; Zhao, Y. C. [State Key Laboratory for Geomechanics and Deep Underground Engineering, School of Mechanics and Civil Engineering, School of Sciences, China University of Mining and Technology, Xuzhou 221116 (China); Liu, X. J. [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 (China); Chen, G. X.; Man, Q. K.; Chang, C. T.; Li, R. W., E-mail: liuhaishun@126.com, E-mail: blshen@seu.edu.cn, E-mail: runweili@nimte.ac.cn, E-mail: jiangjz@zju.edu.cn [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Dun, C. C. [Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109 (United States); Shen, B. L., E-mail: liuhaishun@126.com, E-mail: blshen@seu.edu.cn, E-mail: runweili@nimte.ac.cn, E-mail: jiangjz@zju.edu.cn [School of Materials Science and Engineering, Southeast University, Nanjing 211189 (China); Inoue, A. [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); and others

    2014-09-28

    Boson peaks (BP) have been observed from phonon specific heats in 10 studied amorphous alloys. Two Einstein-type vibration modes were proposed in this work and all data can be fitted well. By measuring and analyzing local atomic structures of studied amorphous alloys and 56 reported amorphous alloys, it is found that (a) the BP originates from local harmonic vibration modes associated with the lengths of short-range order (SRO) and medium-range order (MRO) in amorphous alloys, and (b) the atomic packing in amorphous alloys follows a universal scaling law, i.e., the ratios of SRO and MRO lengths to solvent atomic diameter are 3 and 7, respectively, which exact match with length ratios of BP vibration frequencies to Debye frequency for the studied amorphous alloys. This finding provides a new perspective for atomic packing in amorphous materials, and has significant implications for quantitative description of the local atomic orders and understanding the structure-property relationship.

  5. Bulk amorphous Mg-based alloys

    DEFF Research Database (Denmark)

    Pryds, Nini

    2004-01-01

    are discussed in this paper. On the basis of these measurements phase diagrams of the different systems were constructed. Finally, it is demonstrated that when pressing the bulk amorphous alloy onto a metallic dies at temperatures within the supercooled liquid region, the alloy faithfully replicates the surface...

  6. Amorphous silicon passivation for 23.3% laser processed back contact solar cells

    Science.gov (United States)

    Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

    2017-08-01

    This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

  7. Metal induced crystallization of silicon germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gjukic, M.

    2007-05-15

    In the framework of this thesis the applicability of the aluminium-induced layer exchange on binary silicon germanium alloys was studied. It is here for the first time shown that polycrstalline silicon-germanium layers can be fabricated over the whole composition range by the aluminium-induced layer exchange. The experimental results prove thet the resulting material exhibits a polycrystalline character with typocal grain sizes of 10-100 {mu}m. Raman measurements confirm that the structural properties of the resulting layers are because of the large crystallites more comparable with monocrystalline than with nano- or microcrystalline silicon-germanium. The alloy ratio of the polycrystalline layer correspondes to the chemical composition of the amorphous starting layer. The polycrystalline silicon-germanium layers possess in the range of the interband transitions a reflection spectrum, as it is otherwise only known from monocrystalline reference layers. The improvement of the absorption in the photovoltaically relevant spectral range aimed by the application of silicon-germanium could be also proved by absorption measurments. Strongly correlated with the structural properties of the polycrystalline layers and the electronic band structure resulting from this are beside the optical properties also the electrical properties of the material, especially the charge-carrier mobility and the doping concentration. For binary silicon-germanium layers the hole concentration of about 2 x 10{sup 18} cm{sup -3} for pure silicon increrases to about 5 x 10{sup 20} cm{sub -3} for pure germanium. Temperature-resolved measurements were applied in order to detect doping levels respectively semiconductor-metal transitions. In the last part of the thesis the hydrogen passivation of polycrystalline thin silicon-germanium layers, which were fabricated by means of aluminium-induced layer exchange, is treated.

  8. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    International Nuclear Information System (INIS)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-01-01

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

  9. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  10. Superlattice doped layers for amorphous silicon photovoltaic cells

    Science.gov (United States)

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  11. A comparative chemical network study of HWCVD deposited amorphous silicon and carbon based alloys thin films

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Bibhu P., E-mail: bibhuprasad.swain@gmail.com [Centre for Materials Science and Nanotechnology, Sikkim Manipal Institute of Technology, Majitar, Rangpo Sikkim (India); Swain, Bhabani S.; Hwang, Nong M. [Thin Films and Microstructure Laboratory, Department of Materials Science and Engineering, Seoul National University, Seoul (Korea, Republic of)

    2014-03-05

    Highlights: • a-SiC:H, a-SiN:H, a-C:H and a-SiCN:H films were deposited by hot wire chemical vapor deposition. • Evolution of microstructure of a-SiCN:H films deposited at different NH{sub 3} flow rate were analyzed. • The chemical network of Si and C based alloys were studied by FTIR and Raman spectroscopy. -- Abstract: Silicon and carbon based alloys were deposited by hot wire chemical vapor deposition (HWCVD). The microstructure and chemical bonding of these films were characterized by field emission scanning electron microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The electron microscopy revealed various microstructures were observed for a-C:H, a-SiC:H, a-SiN:H, a-CN:H and a-SiCN:H films. The microstructure of SiN:H films showed agglomerate spherical grains while a-C:H films showed more fractal surface with branched microstructure. However, a-SiC:H, a-CN:H and a-SiCN:H indicated uniform but intermediate surface fractal microstructure. A series of a-SiCN:H films were deposited with variation of NH{sub 3} flow rate. The nitrogen incorporation in a-SiCN:H films alter the carbon network from sp{sup 2} to sp{sup 3} bonding The detail chemical bonding of amorphous films was analyzed by curve fitting method.

  12. Photoconductivity of amorphous silicon-rigorous modelling

    International Nuclear Information System (INIS)

    Brada, P.; Schauer, F.

    1991-01-01

    It is our great pleasure to express our gratitude to Prof. Grigorovici, the pioneer of the exciting field of amorphous state by our modest contribution to this area. In this paper are presented the outline of the rigorous modelling program of the steady-state photoconductivity in amorphous silicon and related materials. (Author)

  13. Studies of pulsed laser melting and rapid solidification using amorphous silicon

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Wood, R.F.

    1984-06-01

    Pulsed-laser melting of ion implantation-amorphized silicon layers, and subsequent solidification were studied. Measurements of the onset of melting of amorphous silicon layers and of the duration of melting, and modified melting model calculations demonstrated that the thermal conductivity, K/sub a/, of amorphous silicon is very low (K/sub a/ approx. = 0.02 W/cm-K). K/sub a/ is also the dominant parameter determining the dynamical response of amorphous silicon to pulsed laser radiation. TEM indicates that bulk (volume) nucleation occurs directly from the highly undercooled liquid silicon that can be prepared by pulsed laser melting of amorphous silicon layers at low laser energy densities. A modified thermal melting model is presented. The model calculations demonstrate that the release of latent heat by bulk nucleation occurring during the melt-in process is essential to obtaining agreement with observed depths of melting. These calculations also show that this release of latent heat accompanying bulk nucleation can result in the existence of buried molten layers of silicon in the interior of the sample after the surface has solidified. The bulk nucleation implies that the liquid-to-amorphous phase transition (produced using picosecond or uv nanosecond laser pulses) cannot be explained using purely thermodynamic considerations

  14. A fax-machine amorphous silicon sensor for X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J. [Association EURATOM/CIEMAT, Madrid (Spain); Barcala, J.M. [Association EURATOM/CIEMAT, Madrid (Spain); Chvatchkine, V. [Association EURATOM/CIEMAT, Madrid (Spain); Ioudine, I. [Association EURATOM/CIEMAT, Madrid (Spain); Molinero, A. [Association EURATOM/CIEMAT, Madrid (Spain); Navarrete, J.J. [Association EURATOM/CIEMAT, Madrid (Spain); Yuste, C. [Association EURATOM/CIEMAT, Madrid (Spain)

    1996-10-01

    Amorphous silicon detectors have been used, basically, as solar cells for energetics applications. As light detectors, linear sensors are used in fax and photocopier machines because they can be built with a large size, low price and have a high radiation hardness. Due to these performances, amorphous silicon detectors have been used as radiation detectors, and, presently, some groups are developing matrix amorphous silicon detectors with built-in electronics for medical X-ray applications. Our group has been working on the design and development of an X-ray image system based on a commercial fax linear amorphous silicon detector. The sensor scans the selected area and detects light produced by the X-ray in a scintillator placed on the sensor. Image-processing software produces a final image with better resolution and definition. (orig.).

  15. Threshold irradiation dose for amorphization of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Zinkle, S.J. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.

  16. Threshold irradiation dose for amorphization of silicon carbide

    International Nuclear Information System (INIS)

    Snead, L.L.; Zinkle, S.J.

    1997-01-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340 ± 10K

  17. Amorphous silicon as high index photonic material

    Science.gov (United States)

    Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

    2009-05-01

    Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

  18. Crystallization and growth of Ni-Si alloy thin films on inert and on silicon substrates

    Science.gov (United States)

    Grimberg, I.; Weiss, B. Z.

    1995-04-01

    The crystallization kinetics and thermal stability of NiSi2±0.2 alloy thin films coevaporated on two different substrates were studied. The substrates were: silicon single crystal [Si(100)] and thermally oxidized silicon single crystal. In situ resistance measurements, transmission electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy were used. The postdeposition microstructure consisted of a mixture of amorphous and crystalline phases. The amorphous phase, independent of the composition, crystallizes homogeneously to NiSi2 at temperatures lower than 200 °C. The activation energy, determined in the range of 1.4-2.54 eV, depends on the type of the substrate and on the composition of the alloyed films. The activation energy for the alloys deposited on the inert substrate was found to be lower than for the alloys deposited on silicon single crystal. The lowest activation energy was obtained for nonstoichiometric NiSi2.2, the highest for NiSi2—on both substrates. The crystallization mode depends on the structure of the as-deposited films, especially the density of the existing crystalline nuclei. Substantial differences were observed in the thermal stability of the NiSi2 compound on both substrates. With the alloy films deposited on the Si substrate, only the NiSi2 phase was identified after annealing to temperatures up to 800 °C. In the films deposited on the inert substrate, NiSi and NiSi2 phases were identified when the Ni content in the alloy exceeded 33 at. %. The effects of composition and the type of substrate on the crystallization kinetics and thermal stability are discussed.

  19. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Zahidur R., E-mail: zr.chowdhury@utoronto.ca; Kherani, Nazir P., E-mail: kherani@ecf.utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada)

    2014-12-29

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  20. Annealing behavior of high permeability amorphous alloys

    International Nuclear Information System (INIS)

    Rabenberg, L.

    1980-06-01

    Effects of low temperature annealing on the magnetic properties of the amorphous alloy Co 71 4 Fe 4 6 Si 9 6 B 14 4 were investigated. Annealing this alloy below 400 0 C results in magnetic hardening; annealing above 400 0 C but below the crystallization temperature results in magnetic softening. Above the crystallization temperature the alloy hardens drastically and irreversibly. Conventional and high resolution transmission electron microscopy were used to show that the magnetic property changes at low temperatures occur while the alloy is truly amorphous. By imaging the magnetic microstructures, Lorentz electron microscopy has been able to detect the presence of microscopic inhomogeneities in this alloy. The low temperature annealing behavior of this alloy has been explained in terms of atomic pair ordering in the presence of the internal molecular field. Lorentz electron microscopy has been used to confirm this explanation

  1. In situ observation of shear-driven amorphization in silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    He, Yang; Zhong, Li; Fan, Feifei; Wang, Chongmin; Zhu, Ting; Mao, Scott X.

    2016-09-19

    Amorphous materials have attracted great interest in the scientific and technological fields. An amorphous solid usually forms under the externally driven conditions of melt-quenching, irradiation and severe mechanical deformation. However, its dynamic formation process remains elusive. Here we report the in situ atomic-scale observation of dynamic amorphization processes during mechanical straining of nanoscale silicon crystals by high resolution transmission electron microscopy (HRTEM). We observe the shear-driven amorphization (SDA) occurring in a dominant shear band. The SDA involves a sequence of processes starting with the shear-induced diamond-cubic to diamond-hexagonal phase transition that is followed by dislocation nucleation and accumulation in the newly formed phase, leading to the formation of amorphous silicon. The SDA formation through diamond-hexagonal phase is rationalized by its structural conformity with the order in the paracrystalline amorphous silicon, which maybe widely applied to diamond-cubic materials. Besides, the activation of SDA is orientation-dependent through the competition between full dislocation nucleation and partial gliding.

  2. Amorphization of C-implanted Fe(Cr) alloys

    International Nuclear Information System (INIS)

    Knapp, J.A.; Follstaedt, D.M.; Sorensen, N.R.; Pope, L.E.

    1991-01-01

    The amorphous phase formed by implanting C into Fe alloyed with Cr, which is a prototype for the amorphous phase formed by implanting C into stainless steels, is compared to that formed by implanting C and Ti into Fe and steels. The composition range of the phase has been examined; higher Cr and C concentrations are required than needed with Ti and C. The friction and wear benefits obtained by implanting stainless steels with C only do not persist for the long durations and high wear loads found with Ti and C. However, the amorphous Fe-Cr-C alloys exhibit good aqueous corrosion resistance. (orig.)

  3. Superconducting properties of amorphous Zr-Ge binary alloys

    International Nuclear Information System (INIS)

    Inoue, A.; Takahashi, Y.; Toyota, N.; Fukase, T.; Masumoto, T.

    1982-01-01

    A new type of refractory metal-metalloid amorphous alloys exhibiting superconductivity has been found in a binary Zr-Ge system by a modified melt-spinning technique. Specimens are in the form of continuous ribbons 1 to 2 mm wide and 0.02 to 0.03 mm thick. The germanium content in the amorphous alloys is limited to the range of 13 to 21 at%. These amorphous alloys are so ductile that no cracks are observed even after closely contacted bending test. Data are reported for various alloy compositions for the Vickers hardness and crystallization temperature, the tensile fracture strength, superconducting transition temperature Tsub(c), upper critical magnetic field, critical current density in the absence of an applied field, upper critical field gradient at Tsub(c) and the electrical resistivity at 4.2 K. The Ginzburg-Landau (GL) parameter and the GL coherence length were estimated to be 72 to 111 and about 7.9 nm, respectively, from these experimental values by using the Ginzburg-Landau-Abrikosov-Gorkov theory and hence it is concluded that the Zr-Ge amorphous alloys are extremely 'soft' type-II superconductor with high degree of dirtiness which possesses the Tsub(c) values higher than zirconium metal, in addition to high strength combined with good ductility. (author)

  4. Production and properties of light-metal base amorphous alloys

    International Nuclear Information System (INIS)

    Inoue, Akihisa; Masumoto, Tsuyoshi

    1993-01-01

    Light-metal base alloys with high specific strength and good corrosion resistance were produced through amorphization of Al and Mg-based alloys. The amorphous phase is formed in rapidly solidified Al-TM-Ln and Mg-TM-Ln (TM=transition metal, Ln=lanthanide metal) alloys. The highest tensile strength (σ f ) reaches 1,330 MPa for the Al base and 830 MPa for the Mg base. Furthermore, the Mg-based alloys have a large glass-forming capacity which enables to produce an amorphous phase by a metallic mold casting method. The extrusion of the Al-based amorphous powders at temperatures above crystallization temperature caused the formation of high strength materials with finely mixed structure consisting of dispersed intermetallic compounds in an Al matrix. The highest values of σ f and fatigue limit are as high as 940 and 313 MPa, respectively, at room temperature and 520 and 165 MPa at 473 K. The extruded Al-Ni-Mm alloy has already been used as machine parts and subsequent further development as practical materials is expected by taking these advantages

  5. Surface-Activated Amorphous Alloy Fuel Electrodes for Methanol Fuel Cell

    OpenAIRE

    Asahi, Kawashima; Koji, Hashimoto; The Research Institute for Iron, Steel and Other Metals; The Research Institute for Iron, Steel and Other Metals

    1983-01-01

    Amorphous alloy electrodes for electrochemical oxidation of methanol and its derivatives were obtained by the surface activation treatment consisting of electrodeposition of zinc on as-quenched amorphous alloy substrates, heating at 200-300℃ for 30 min, and subsequently leaching of zinc in an alkaline solution. The surface activation treatment provided a new method for the preparation of a large surface area on the amorphous alloys. The best result for oxidation of methanol, sodium formate an...

  6. Corrosion resistance of amorphous NiCrZr and NiCrMoZr alloys

    International Nuclear Information System (INIS)

    Naka, M.; Miyake, M.; Okamoto, I.

    1987-01-01

    One of the authors has reported that the corrosion resistance of chromium containing amorphous alloys is extremely improved by alloying phosphorus among metalloids. Two factors operate for the improvement of corrosion resistance of the amorphous alloys. First, phosphorus serves for the rapid formation of protective passive film. Second, the compositional and structural homogeneity in amorphous state also account for the formation of protective film. The latter factor has been clearly seen in the high corrosion resistance of CoCrMoZr and CoCrWZr alloys without metalloids. In order to clarify the separately two factors in the corrosion resistance of amorphous alloys, the corrosion resistance of amorphous alloys without metalloids has to be further investigated. This paper also deals with the corrosion resistance and electrochemical behavior of NiCrZr and NiCrMoZr alloys in 1N HCl, and compare them with the corrosion behavior of the crystalline alloys containing the same composition as that of the amorphous alloys

  7. Synthesis of Amorphous Powders of Ni-Si and Co-Si Alloys by Mechanical Alloying

    Science.gov (United States)

    Omuro, Keisuke; Miura, Harumatsu

    1991-05-01

    Amorphous powders of the Ni-Si and Co-Si alloys are synthesized by mechanical alloying (MA) from crystalline elemental powders using a high energy ball mill. The alloying and amorphization process is examined by X-ray diffraction, differential scanning calorimetry (DSC), and scanning electron microscopy. For the Ni-Si alloy, it is confirmed that the crystallization temperature of the MA powder, measured by DSC, is in good agreement with that of the powder sample prepared by mechanical grinding from the cast alloy ingot products of the same composition.

  8. Production of amorphous alloys by ion implantation

    International Nuclear Information System (INIS)

    Grant, W.A.; Chadderton, L.T.; Johnson, E.

    1978-01-01

    Recent data are reported on the use of ion implantation to produce amorphous metallic alloys. In particular data on the dose dependence of the crystalline to amorphous transition induced by P + implantation of nickel is presented. (Auth.)

  9. Mg amorphous alloys for biodegradable implants

    International Nuclear Information System (INIS)

    Danez, G.P.; Koga, G.Y.; Tonucci, S.; Bolfarini, C.; Kiminami, C.S.; Botta Filho, W.J.

    2010-01-01

    The use of implants made from amorphous alloys magnesium-based with additions of zinc and calcium are promising. Properties such as biocompatibility, low density, high mechanical strength, low modulus (as compared to alloys such as stainless steel and titanium), corrosion resistance and wear resistance make it attractive for use in implants. Moreover, the by-products of corrosion and wear are not toxic and may contribute to fixation. Aiming to understand the tendency of this amorphous ternary (Mg-Zn-Ca) and expand the information about this system, this work involved the use of the topological criterion of instability (λ) and the criterion of electronegativity (Δe) to the choice of compositions. The alloys were processed into wedge-shaped and analyzed structurally and in X-ray diffraction and scanning electron microscopy. (author)

  10. Relaxation processes during amorphous metal alloys heating

    International Nuclear Information System (INIS)

    Malinochka, E.Ya.; Durachenko, A.M.; Borisov, V.T.

    1982-01-01

    Behaviour of Te+15 at.%Ge and Fe+13 at.%P+7 at.%C amorphous metal alloys during heating has been studied using the method of differential scanning calorimetry (DSC) as the most convenient one for determination of the value of heat effects, activation energies, temperature ranges of relaxation processes. Thermal effects corresponding to high-temperature relaxation processes taking place during amorphous metal alloys (AMA) heating are detected. The change of ratio of relaxation peaks values on DSC curves as a result of AMA heat treatment can be explained by the presence of a number of levels of inner energy in amorphous system, separated with potential barriers, the heights of which correspond to certain activation energies of relaxation processes

  11. Bonding tungsten, W–Cu-alloy and copper with amorphous Fe–W alloy transition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Song, E-mail: wangsongrain@163.com [Laboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China); Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Ling, Yunhan, E-mail: yhling@mail.tsinghua.edu.cn [Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Zhao, Pei [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Zang, Nanzhi [Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Wang, Jianjun [Laboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China); Guo, Shibin [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100039 (China); Zhang, Jun [Laboratory of Advanced Materials, Tsinghua University, Beijing 100084 (China); Xu, Guiying [Laboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083 (China)

    2013-05-15

    W/Cu graded materials are the leading candidate materials used as the plasma facing components in a fusion reactor. However, tungsten and copper can hardly be jointed together due to their great differences in physical properties such as coefficient of thermal expansion and melting point, and the lack of solid solubility between them. To overcome those difficulties, a new amorphous Fe–W alloy transitional coating and vacuum hot pressing (VHP) method were proposed and introduced in this paper. The morphology, composition and structure of the amorphous Fe–W alloy coating and the sintering interface of the specimens were analyzed by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) and X-ray diffraction (XRD). The thermal shock resistance of the bonded composite was also tested. The results demonstrated that amorphous structure underwent change from amorphous to nano grains during joining process, and the joined W/Cu composite can endued plasma thermal shock resistance with energy density more than 5.33 MW/m{sup 2}. It provides a new feasible technical to join refractory tungsten to immiscible copper with amorphous Fe–W alloy coating.

  12. Development of amorphous and nanocrystalline Al65Cu35-xZrx alloys by mechanical alloying

    International Nuclear Information System (INIS)

    Manna, I.; Chattopadhyay, P.P.; Banhart, F.; Fecht, H.J.

    2004-01-01

    Mechanical alloying of Al 65 Cu 35-x Zr x (x=5, 15 and 25 at.% Zr) elemental powder blends by planetary ball milling up to 50 h yields amorphous and/or nanocrystalline products. Microstructure of the milled product at different stages of milling has been characterized by X-ray diffraction, (XRD) high-resolution transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Among the different alloys synthesized by mechanical alloying, Al 65 Cu 20 Zr 15 yields a predominantly amorphous product, while the other two alloys develop a composite microstructure comprising nanocrystalline and amorphous solid solutions in Al 65 Cu 10 Zr 25 and nano-intermetallic phase/compound in Al 65 Cu 30 Zr 5 , respectively. The genesis of solid-state amorphization in Al 65 Cu 20 Zr 15 and Al 65 Cu 10 Zr 25 is investigated

  13. Development of large area, high efficiency amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

    1996-02-01

    The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

  14. Study of structural relaxation in amorphous alloys prepared by sputtering

    International Nuclear Information System (INIS)

    Habibi, S.; Banaee, N.; Majidy, S.

    2004-01-01

    Full text: We have prepared amorphous alloy of Al x Cu 1-x (with X= 93, 90, 80, 70, 30) using sputtering system. The rate of growth was 0.7 nm/sec. X-ray diffractometer was used to conform the amorphous nature of the prepared specimens. High temperature annealing can change amorphous to crystalline structure, while low temperature annealing may transform amorphous state to a more stable amorphous state via structural relaxation of the specimen and enhancing the properties of the alloys, such as mechanical ductility etc. Here we have annealed the alloys at temperatures 100, 150, 200, 250, 300 and 350 C for 1 hour. We observed that microhardness of the specimen increases with annealing and gets maximum value at 300 C. Our XRD experiments and also earlier Moessbauer studies show that while the average interatomic distances reduces due to annealing, structure remains amorphous

  15. Local atomic structure and chemical order in amorphous SiGe:H and SiC:H alloys

    International Nuclear Information System (INIS)

    Pisarkiewicz, T.; Stapinski, T.

    1994-01-01

    The local structure and chemical ordering in amorphous hydrogenated silicon-germanium and silicon-carbon alloys were analyzed mainly with the help of extended x-ray absorption fine structure (EXAFS) spectroscopy, Raman scattering and electron diffraction. Ge-Ge and Ge-Si distances were found to be independent of concentration and the composition of the first coordination shell around Ge is consistent with a random mixing of the two species in a-Si 1-x Ge:H alloy. The first-coordination-shell average bond lengths for Si-Si and SiC in a-Si 1-x C x :H are also constant with concentration x and the comparison of the first coordination shell composition around Si with average concentration indicates that the alloys tends to be chemically ordered. The degree of crystallinity in microcrystalline Si films determined by EXAFS is in agreement with that obtained in Raman scattering analysis. (author). 16 refs, 5 figs

  16. Low temperature irradiation effects on iron-boron based amorphous metallic alloys

    International Nuclear Information System (INIS)

    Audouard, Alain.

    1983-01-01

    Three iron-boron amorphous alloys and the crystalline Fe 3 B alloy have been irradiated at liquid hydrogen temperature. 2,4 MeV electron irradiation induces the creation of point defects in the amorphous alloys as well as in the crystalline Fe 3 B alloy. These point defects can be assimilated to iron ''Frenkel pairs''. They have been characterized by determining their intrinsic electrical resistivity and their formation volume. The displacement threshold energy of iron atoms has also been determined. 10 B fission fragments induce, in these amorphous alloys, displacement cascades which lead to stable vacancy rich zones. This irradiation also leads to a structural disorder in relation with the presence of defects. 235 U fission fragments irradiation modifies drastically the structure of the amorphous alloys. The results have been interpreted on the basis of the coexistence of two opposite processes which induce local disorder and crystallisation respectively [fr

  17. Low temperature irradiation effects on iron boron based amorphous metallic alloys

    International Nuclear Information System (INIS)

    Audouard, A.

    1982-09-01

    Three Fe-B amorphous alloys (Fe 80 B 20 , Fe 27 Mo 2 B 20 and Fe 75 B 25 ) and the crystallized Fe 3 B alloy have been irradiated at the temperature of liquid hydrogen. Electron irradiation and irradiation by 10 B fission fragments induce point defects in amorphous alloys. These defects are characterized by an intrinsic resistivity and a formation volume. The threshold energy for the displacement of iron atoms has also been calculated. Irradiation by 235 U fission fragments induces some important structural modifications in the amorphous alloys [fr

  18. Development of Amorphous Filler Alloys for the Joining of Nuclear Materials

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jai Young; Kim, Dong Myong; Kang, Yoon Sun; Jung, Jae Han; Yu, Ji Sang; Kim, Hae Yeol; Lee, Ho [Korea Advanced Institute of Science and Technology, Taejon (Korea, Republic of)

    1997-08-01

    In the case of advanced CANDU fuel being useful in future, the fabrication processes for soundness insurance of a improved nuclear fuel bundle must be developed at the same time because it have three times combustibility as existing fuel. In particular, as the improved nuclear fuel bundle in which a coated layer thickness is thinner than existing that, firmity of a joint part is very important. Therefore, we need to develop a joint technique using new solder which can settle a potential problem in current joining method. As the Zr-Be alloy system is composed with the elements having high neutron permeability, they are suitable for joint of nuclear fuel pack. The various compositions Zr-Be binary metallic glass alloys were applicable to the joining the nuclear fuel bundles. The thickness of joint layer using the Zr{sub 1}-{sub x}Be{sub x} amorphous ribbon as a solder is thinner than that using physical vapor deposited Be. Among the Zr{sub 1}-{sub x}Be{sub x} amorphous binary alloys, Zr{sub 0}.7Be-0.3 binary alloy is the most appropriate for joint of nuclear fuel bundle because its joint layer is smooth and thin due to low degree of Be diffusion. In the case of the Zr{sub (}0.7-y)Ti{sub y}Be{sub 0}.3 and Zr{sub (}0.7-y)Nb{sub y}Be{sub 0}3 ternary amorphous alloys, the crystallization temperature(T{sub x}) and activation energy(E{sub x}) increase as the contents of Nb and Ti increase respectively. In the aspect of thermal stability, the ternary amorphous alloys are superior than Zr-Be binary amorphous alloys and Zr-Ti-Be amorphous alloy is superior than Zr-Nb-Be amorphous alloy. 12 refs., 5 tabs., 25 figs. (author)

  19. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

  20. Hydrogen in disordered and amorphous solids

    International Nuclear Information System (INIS)

    Bambakidis, G; Bowman, R.C.

    1986-01-01

    This book presents information on the following topoics: elements of the theory of amorphous semiconductors; electronic structure of alpha-SiH; fluctuation induced gap states in amorphous hydrogenated silicon; hydrogen on semiconductor surfaces; the influence of hydrogen on the defects and instabilities in hydrogenated amorphous silicon; deuteron magnetic resonance in some amorphous semiconductors; formation of amorphous metals by solid state reactions of hydrogen with an intermetallic compound; NMR studies of the hydrides of disordered and amorphous alloys; neutron vibrational spectroscopy of disordered metal-hydrogen system; dynamical disorder of hydrogen in LaNi /SUB 5-y/ M /SUB y/ hydrides studied by quasi-elastic neutron scattering; recent studies of intermetallic hydrides; tritium in Pd and Pd /SUB 0.80/ Sg /SUB 0.20/ ; and determination of hydrogen concentration in thin films of absorbing materials

  1. Amorphous Alloy: Promising Precursor to Form Nanoflowerpot

    Directory of Open Access Journals (Sweden)

    Guo Lan

    2014-01-01

    Full Text Available Nanoporous copper is fabricated by dealloying the amorphous Ti2Cu alloy in 0.03 M HF electrolyte. The pore and ligament sizes of the nanoporous copper can be readily tailored by controlling the dealloying time. The as-prepared nanoporous copper provides fine and uniform nanoflowerpots to grow highly dispersed Au nanoflowers. The blooming Au nanoflowers in the nanoporous copper flowerpots exhibit both high catalytic activity and stability towards the oxidation of glucose, indicating that the amorphous alloys are ideal precursors to form nanoflowerpot which can grow functional nanoflowers.

  2. Synthesis and crytallization of amorphous In-Te alloys

    International Nuclear Information System (INIS)

    Vengrenovich, R.D.; Lopatnyuk, I.A.; Mikhal'chenko, V.P.; Kasiyan, I.M.; Geshko, E.I.

    1988-01-01

    Tendency of Te-In alloys with indium content from 5 to 40 % to amorphization is investigated. It is marked that in this interval of concentrations the alloys have the tendency to subcooling even at cooling velocities equalling only 0.2-0.3 K/s. Maximal subcooling ΔT=70 deg takes place for the eutectic composition. Tendency of Te-In alloys to vitrification is explained by the character to interatomic interactions in a liquid, the interactions promote the formation of molecular clusters in it in cooling, that leads to fast increase of viscosity and to increase of T g amorphization temperature

  3. Characterization of Amorphous Silicon Advanced Materials and PV Devices: Final Technical Report, 15 December 2001--31 January 2005

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P. C.

    2005-11-01

    The major objectives of this subcontract have been: (1) understand the microscopic properties of the defects that contribute to the Staebler-Wronski effect to eliminate this effect, (2) perform correlated studies on films and devices made by novel techniques, especially those with promise to improve stability or deposition rates, (3) understand the structural, electronic, and optical properties of films of hydrogenated amorphous silicon (a-Si:H) made on the boundary between the amorphous and microcrystalline phases, (4) search for more stable intrinsic layers of a-Si:H, (5) characterize the important defects, impurities, and metastabilities in the bulk and at surfaces and interfaces in a-Si:H films and devices and in important alloy systems, and (6) make state-of-the-art plasma-enhanced chemical vapor deposition (PECVD) devices out of new, advanced materials, when appropriate. All of these goals are highly relevant to improving photovoltaic devices based on a-Si:H and related alloys. With regard to the first objective, we have identified a paired hydrogen site that may be the defect that stabilizes the silicon dangling bonds formed in the Staebler-Wronski effect.

  4. Corrosion behavior of amorphous and crystalline Cu50Ti50 and Cu50Zr50 alloys

    International Nuclear Information System (INIS)

    Naka, M.; Hoshimoto, K.; Masumoto, T.

    1978-01-01

    Corrosion rates and anodic polarization curves of amorphous and crystalline Cu 50 Ti 50 and Cu 50 Zr 50 alloys have been examined in various acidic, neutral and alkaline solutions. The amorphous alloys are very stable in acidic and alkaline solutions, but unstable in agressive chloride solutions. The corrosion resistance of these amorphous alloys is higher than that of the crystallized alloys. The high corrosion resistance of amorphous alloys is attributable to the high chemical homogeneity of amorphous alloys without localized crystalline defects such as precipitates, segregates, grain boundaries, etc. Metalloid elements play an important role in the corrosion behavior of amorphous alloys; the addition of phosphorus to amorphous Cu-Ti alloy greatly increases the corrosion resistance, even in 1N HCl. (Auth.)

  5. Principles and operation of crystalline and amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Chambouleyron, I.

    1983-01-01

    This paper deals with the fundamental aspects of photovoltaic energy conversion. Crystalline silicon solar cell physics together with design criteria and conversion losses are discussed. The general properties of hydrogenated amorphous silicon and the principles of a-Si:H solar cell operation are briefly reviewed. New trends in amorphous materials of photovoltaic interest and novel device structures are finally presented. (Author) [pt

  6. Methods of quantum chemistry and nanotechnology as applied to the study of the energy states of amorphous tetrahedral structures

    Directory of Open Access Journals (Sweden)

    B. A. Golodenko

    2013-01-01

    Full Text Available The technique and results of an experimental research of power conditions of amorphous alloy hydrogenated carbide silicon is described. Application of power spectra of a silicon valence zone for definition phase structure of its amorphous hydrogenated carbide is shown. Quantitative dependence of a share carbide phases of silicon in structure of its alloy from the maintenance of methane in an initial gas mix is established.

  7. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  8. Optimization of growth parameters of hydrogenated amorphous silicon-sulphur alloys

    International Nuclear Information System (INIS)

    Al-Dallal, S.; Aljishi, S.; Arekat, S.; Al-alawi, S.M.; Hammam, H.

    1995-01-01

    Hydrogenated amorphous silicon sulphur thin films were grown by capacitively coupled radio frequency glow discharge decomposition of SiH/sub 4/ + He) and H/sub 2/S + He) gas mixtures. In this work we report on a study undertaken to instigative the effect of deposition conditions on the optoelectronic properties of a-Si,S:H films. Three series of deposition conditions on the optoelectronic properties of a-Si,S:H films. Three series of films were prepared using a constant flow rate of the gaseous mixture while varying one of the other deposition parameters: substrate temperature, RF powder and process pressure. The films are characterized via IR measurements, optical transmission, photothermal deflection spectroscopy, photoluminescence, the constant photocurrent methods and conductivity measurements. Results indicate that a relatively high power level and a high substrate temperature are necessary to obtain the best films. (author) 8 figs

  9. Threshold irradiation dose for amorphization of silicon carbide

    International Nuclear Information System (INIS)

    Snead, L.L.; Zinkle, S.J.

    1997-01-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface or strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be ∼0.56eV. This model successfully explains the difference in the temperature dependent amorphization behavior of SiC irradiated with 0.56 MeV Si + at 1 x 10 -3 dpa/s and with fission neutrons irradiated at 1 x 10 -6 dpa/s irradiated to 15 dpa in the temperature range of ∼340±10K

  10. Structural models for amorphous transition metal binary alloys

    International Nuclear Information System (INIS)

    Ching, W.Y.; Lin, C.C.

    1976-01-01

    A dense random packing of 445 hard spheres with two different diameters in a concentration ratio of 3 : 1 was hand-built to simulate the structure of amorphous transition metal-metalloid alloys. By introducing appropriate pair potentials of the Lennard-Jones type, the structure is dynamically relaxed by minimizing the total energy. The radial distribution functions (RDF) for amorphous Fe 0 . 75 P 0 . 25 , Ni 0 . 75 P 0 . 25 , Co 0 . 75 P 0 . 25 are obtained and compared with the experimental data. The calculated RDF's are resolved into their partial components. The results indicate that such dynamically constructed models are capable of accounting for some subtle features in the RDF of amorphous transition metal-metalloid alloys

  11. Elastic characteristics and microplastic deformation of amorphous alloys on iron base

    International Nuclear Information System (INIS)

    Pol'dyaeva, G.P.; Zakharov, E.K.; Ovcharov, V.P.; Tret'yakov, B.N.

    1983-01-01

    Investigation results of elasticity and microplasticity properties (modulus of normal elasticity E, elasticity limit σsub(0.01) and yield limit σsub(0.2)) of three amorphous alloys on iron base Fe 80 B 20 , Fe 70 Cr 10 B 20 and Fe 70 Cr 5 Ni 5 B 20 are given. Amorphous band of the alloys is obtained using the method of melt hardening. It is shown that amorphous alloys on iron base possess high elasticity and yield limits and hardness and are very perspective for the use as spring materials

  12. Crystallization kinetics and magnetic properties of FeSiCr amorphous alloy powder cores

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Hu-ping [School of Logistics Engineering, Wuhan University of Technology, Wuhan 430063 (China); Wang, Ru-wu, E-mail: ruwuwang@hotmail.com [National Engineering Research Center For Silicon Steel, Wuhan 430080 (China); College of Materials Science and Metallurgical Engineering, Wuhan University of Science and Technology, Wuhan 430081 (China); Wei, Ding [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Zeng, Chun [National Engineering Research Center For Silicon Steel, Wuhan 430080 (China)

    2015-07-01

    The crystallization kinetics of FeSiCr amorphous alloy, characterized by the crystallization activation energy, Avrami exponent and frequency factor, was studied by non-isothermal differential scanning calorimetric (DSC) measurements. The crystallization activation energy and frequency factor of amorphous alloy calculated from Augis–Bennett model were 476 kJ/mol and 5.5×10{sup 18} s{sup −1}, respectively. The Avrami exponent n was calculated to be 2.2 from the Johnson–Mehl–Avrami (JMA) equation. Toroid-shaped Fe-base amorphous powder cores were prepared from the commercial FeSiCr amorphous alloy powder and subsequent cold pressing using binder and insulation. The characteristics of FeSiCr amorphous alloy powder and the effects of compaction pressure and insulation content on the magnetic properties, i.e., effective permeability μ{sub e}, quality factor Q and DC-bias properties of FeSiCr amorphous alloy powder cores, were investigated. The FeSiCr amorphous alloy powder cores exhibit a high value of quality factor and a stable permeability in the frequency range up to 1 MHz, showing superior DC-bias properties with a “percent permeability” of more than 82% at H=100 Oe. - Highlights: • The crystallization kinetics of FeSiCr amorphous alloy was investigated. • The FeSiCr powder cores exhibit a high value of Q and a stable permeability. • The FeSiCr powder cores exhibit superior DC-bias properties.

  13. Crystalline to amorphous transformation in silicon

    International Nuclear Information System (INIS)

    Cheruvu, S.M.

    1982-09-01

    In the present investigation, an attempt was made to understand the fundamental mechanism of crystalline-to-amorphous transformation in arsenic implanted silicon using high resolution electron microscopy. A comparison of the gradual disappearance of simulated lattice fringes with increasing Frenkel pair concentration with the experimental observation of sharp interfaces between crystalline and amorphous regions was carried out leading to the conclusion that when the defect concentration reaches a critical value, the crystal does relax to an amorphous state. Optical diffraction experiments using atomic models also supported this hypothesis. Both crystalline and amorphous zones were found to co-exist with sharp interfaces at the atomic level. Growth of the amorphous fraction depends on the temperature, dose rate and the mass of the implanted ion. Preliminary results of high energy electron irradiation experiments at 1.2 MeV also suggested that clustering of point defects occurs near room temperature. An observation in a high resolution image of a small amorphous zone centered at the core of a dislocation is presented as evidence that the nucleation of an amorphous phase is heterogeneous in nature involving clustering or segregation of point defects near existing defects

  14. Porosity and mechanical properties of amorphous alloys

    International Nuclear Information System (INIS)

    Betekhtin, V.I.; Kadomtsev, A.G.; Amosova, O.V.

    2003-01-01

    The obtained experimental data on the effect of the inherent submicroporosity and its change under impact of high hydrostatic pressure or annealing on the strength, microdestruction, embrittlement temperature, the first crystallization stage and peculiarities of the surface crystallization of the amorphous alloys are analyzed. The conclusion is made on the basis of the studies on the peculiarities of the voluminous and surface crystallization of the Fe 56 Co 24 Si 5 B 15 , Fe 78 Ni 2 Si 8 B 12 , Fe 85 B 15 , Fe 58 Ni 20 Si 9 B 13 amorphous alloys that the increase in the inherent submicroporosity is one of the essential factors facilitating crystallization [ru

  15. Corrosion resistance of Fe-based amorphous alloys

    International Nuclear Information System (INIS)

    Botta, W.J.; Berger, J.E.; Kiminami, C.S.; Roche, V.; Nogueira, R.P.; Bolfarini, C.

    2014-01-01

    Highlights: ► We report corrosion properties of Fe-based amorphous alloys in different media. ► The Cr-containing alloys had corrosion resistance close to that of Pt in all media. ► The wide range of electrochemical stability is relevant in many industrial domains. -- Abstract: Fe-based amorphous alloys can be designed to present an attractive combination of properties with high corrosion resistance and high mechanical strength. Such properties are clearly adequate for their technological use as coatings, for example, in steel pipes. In this work, we studied the corrosion properties of amorphous ribbons of the following Fe-based compositions: Fe 66 B 30 Nb 4 , [(Fe 0.6 Co 0.4 ) 0.75 B 0.2 Si 0.05 ] 96 Nb 4 , [(Fe 0.7 Co 0.3 ) 0.75 B 0.2 Si 0.05 ] 96 Nb 4 , Fe 56 Cr 23 Ni 5.7 B 16 , Fe 53 Cr 22 Ni 5.6 B 19 and Fe 50 Cr 22 Ni 5.4 B 23 . The ribbons were obtained by rapid solidification using the melt-spinning process, and were characterized by X-ray diffraction (XRD), differential scanning calorimetry (DSC) and optical (OM) and scanning electron microscopy (SEM). The corrosion properties were evaluated by corrosion potential survey and potentiodynamic polarization. The Cr containing alloys, that is the FeCrNiB type of alloys, showed the best corrosion resistance properties with the formation of a stable passive film that ensured a very large passivation plateau

  16. 21. Colloquium on metallurgy. Amorphous alloys and materials

    International Nuclear Information System (INIS)

    1979-01-01

    Twenty-two papers were presented at the 21st colloquium on metallurgy of amorphous alloys and materials. They deal with the applications, the various types, the preparation methods, the structure, the magnetic and thermodynamic properties and the structure defects of the amorphous materials [fr

  17. Electrical and Magnetic Properties of Binary Amorphous Transition Metal Alloys.

    Science.gov (United States)

    Liou, Sy-Hwang

    The electrical, superconductive and magnetic properties of several binary transition metal amorphous and metastable crystalline alloys, Fe(,x)Ti(,100-x) (30 (LESSTHEQ) x (LESSTHEQ) 100), Fe(,x)Zr(,100-x) (20 (LESSTHEQ) x (LESSTHEQ) 93), Fe(,x)Hf(,100-x) (20 (LESSTHEQ) x (LESSTHEQ) 100), Fe(,x)Nb(,100 -x) (22 (LESSTHEQ) x (LESSTHEQ) 85), Ni(,x)Nb(,100-x) (20 (LESSTHEQ) x (LESSTHEQ) 80), Cu(,x)Nb(,100-x) (10 (LESSTHEQ) x (LESSTHEQ) 90) were studied over a wide composition range. Films were made using a magnetron sputtering system, and the structure of the films was investigated by energy dispersive x-ray diffraction. The composition region of each amorphous alloys system was determined and found in good agreement with a model proposed by Egami and Waseda. The magnetic properties and hyperfine interactions in the films were investigated using a conventional Mossbauer spectrometer and a ('57)Co in Rh matrix source. In all Fe-early transition metal binary alloys systems, Fe does not retain its moment in the low iron concentration region and the result is that the critical concentration for magnetic order (x(,c)) is much larger than anticipated from percolation considerations. A direct comparison between crystalline alloys and their amorphous counterparts of the same composition illustrate no clear correlation between crystalline and amorphous states. Pronounced discontinuities in the magnetic properties with variation in Fe content of all Fe-early transition metal alloys at phase boundaries separating amorphous and crystalline states have been observed. This is caused by the differences in the atomic arrangement and the electronic structure between crystalline and amorphous solids. The temperature dependence of resistivity, (rho)(T), of several binary amorphous alloys of Fe-TM (where TM = Ti, Zr, Hf, Nb etc.) has been studied from 2K to 300K. The Fe-poor (x x(,c)) samples have distinctive differences in (rho)(T) at low temperature (below 30K). All the magnetic samples

  18. Elastic characteristics and microplastic deformation of amorphous alloys on iron base

    Energy Technology Data Exchange (ETDEWEB)

    Pol' dyaeva, G.P.; Zakharov, E.K.; Ovcharov, V.P.; Tret' yakov, B.N. (Tsentral' nyj Nauchno-Issledovatel' skij Inst. Chernoj Metallurgii, Moscow (USSR))

    1983-01-01

    Investigation results of elasticity and microplasticity properties (modulus of normal elasticity E, elasticity limit sigmasub(0.01) and yield limit sigmasub(0.2)) of three amorphous alloys on iron base Fe/sub 80/B/sub 20/, Fe/sub 70/Cr/sub 10/B/sub 20/ and Fe/sub 70/Cr/sub 5/Ni/sub 5/B/sub 20/ are given. Amorphous band of the alloys is obtained using the method of melt hardening. It is shown that amorphous alloys on iron base possess high elasticity and yield limits and hardness and are very perspective for the use as spring materials.

  19. Neutron irradiation induced amorphization of silicon carbide

    International Nuclear Information System (INIS)

    Snead, L.L.; Hay, J.C.

    1998-01-01

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 x 10 25 n/m 2 . Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C

  20. Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma

    International Nuclear Information System (INIS)

    Mejia H, J.A.

    1996-01-01

    Hydrogenated amorphous silicon (a-Si:H) films have been widely applied to semiconductor devices, such as thin film transistors, solar cells and photosensitive devices. In this work, the first Si-H-Cl alloys (obtained at the National Institute for Nuclear Research of Mexico) were formed by a microwave electron cyclotron resonance (Ecr) plasma CVD method. Gaseous mixtures of silicon tetrachloride (Si Cl 4 ), hydrogen and argon were used. The Ecr plasma was generated by microwaves at 2.45 GHz and a magnetic field of 670 G was applied to maintain the discharge after resonance condition (occurring at 875 G). Si and Cl contents were analyzed by Rutherford Backscattering Spectrometry (RBS). It was found that, increasing proportion of Si Cl 4 in the mixture or decreasing pressure, the silicon and chlorine percentages decrease. Optical gaps were obtained by spectrophotometry. Decreasing temperature, optical gap values increase from 1.4 to 1.5 eV. (Author)

  1. Interaction between rare-earth ions and amorphous silicon nanoclusters produced at low processing temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Meldrum, A. [Department of Physics, University of Alberta, Edmonton, T6G2J1 (Canada)]. E-mail: ameldrum@ualberta.ca; Hryciw, A. [Department of Physics, University of Alberta, Edmonton, T6G2J1 (Canada); MacDonald, A.N. [Department of Physics, University of Alberta, Edmonton, T6G2J1 (Canada); Blois, C. [Department of Physics, University of Alberta, Edmonton, T6G2J1 (Canada); Clement, T. [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G2V4 (Canada); De Corby, R. [Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G2V4 (Canada); Wang, J. [Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong (China); Li Quan [Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong (China)

    2006-12-15

    Temperatures of 1000 deg. C and higher are a significant problem for the incorporation of erbium-doped silicon nanocrystal devices into standard silicon technology, and make the fabrication of contacts and reflectors in light emitting devices difficult. In the present work, we use energy-filtered TEM imaging techniques to show the formation of size-controlled amorphous silicon nanoclusters in SiO films annealed between 400 and 500 deg. C. The PL properties of such films are characteristic of amorphous silicon, and the spectrum can be controlled via a statistical size effect-as opposed to quantum confinement-that has previously been proposed for porous amorphous silicon. Finally, we show that amorphous nanoclusters sensitize the luminescence from the rare-earth ions Er, Nd, Yb, and Tm with excitation cross-sections similar in magnitude to erbium-doped silicon nanocrystal composites, and with a similar nonresonant energy transfer mechanism.

  2. Ultra-soft magnetic Co-Fe-B-Si-Nb amorphous alloys for high frequency power applications

    Science.gov (United States)

    Ackland, Karl; Masood, Ansar; Kulkarni, Santosh; Stamenov, Plamen

    2018-05-01

    With the continuous shrinkage of the footprint of inductors and transformers in modern power supplies, higher flux, while still low-loss metallic replacements of traditional ferrite materials are becoming an intriguing alternative. One candidate replacement strategy is based on amorphous CoFeBSi soft-magnetic alloys, in their metallic glass form. Here the structural and magnetic properties of two different families of CoFeBSi-based soft magnetic alloys, prepared by arc-melting and subsequent melt spinning (rapid quenching) are presented, targeting potential applications at effective frequencies of 100 kHz and beyond. The nominal alloy compositions are Co67Fe4B11Si16Mo2 representing commercial Vitrovac and Co72-xFexB28-y (where B includes non-magnetic elements such as Boron, Silicon etc. x varies between 4 and 5 % and y is varied from 0 to 2 %) denoted Alloy #1 and prepared as a possible higher performance alternative, i.e. lower power loss and lower coercivity, to commercial Vitrovac. Room temperature magnetization measurements of the arc-melted alloys reveal that compared to Vitrovac, Alloy #1 already presents a ten-fold decrease in coercivity, with Hc ˜ 1.4 Am-1 and highest figure of merit of (Ms/Hc > 96). Upon melt-spinning the alloys into thin (< 30 μm) ribbons, the alloys are essentially amorphous when analyzed by XRD. Magnetization measurements of the melt-spun ribbons demonstrate that Alloy #1 possesses a coercivity of just 2 Am-1, which represents a significant improvement compared to melt-spun ribbons of Vitrovac (17 Am-1). A set of prototype transformers of approximately 10 turns of Alloy #1 ribbon exhibits systematically Hc < 10 Am-1 at 100 kHz, without a noticeable decrease in coupled flux and saturation.

  3. Amorphous uranium alloy and use thereof

    International Nuclear Information System (INIS)

    Gambino, R.J.; McElfresh, M.W.; McGuire, T.R.; Plaskett, T.S.

    1991-01-01

    An amorphous alloy containing uranium and a member selected from the group N, P, As, Sb, Bi, S, Se, Te, Po and mixtures thereof; and use thereof for storage medium, light modulator or optical isolator. (author) figs

  4. Oxidation kinetics of amorphous AlxZr1−x alloys

    International Nuclear Information System (INIS)

    Weller, K.; Wang, Z.M.; Jeurgens, L.P.H.; Mittemeijer, E.J.

    2016-01-01

    The oxidation kinetics of amorphous Al x Zr 1−x alloys (solid solution) has been studied as function of the alloy composition (0.26 ≤ x ≤ 0.68) and the oxidation temperature (350 °C ≤ T ≤ 400 °C; at constant pO 2  = 1 × 10 5  Pa) by a combinatorial approach using spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) depth profiling, transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis. Thermal oxidation of the am-Al x Zr 1−x alloys results in the formation of an amorphous oxide overgrowth with a thermodynamically preferred singular composition, corresponding to a constant Al ox /Zr ox ratio of 0.5. Both the solubility and the diffusivity of oxygen in the am-Al x Zr 1−x alloy substrate increase considerably with increasing Zr content, in particular for Zr contents above 49 at.% Zr. Strikingly, the oxidation kinetics exhibit a transition from parabolic oxide growth kinetics for Al-rich am-Al x Zr 1−x alloys (x ≥ 0.51) to linear oxide growth kinetics for Zr-rich am-Al x Zr 1−x alloys (x < 0.35). The underlying oxidation mechanism is discussed. It is concluded that the oxidation kinetics of the amorphous Al x Zr 1−x alloys for 0.26 ≤ x ≤ 0.68 and 350 °C ≤ T ≤ 400 °C are governed by: (i) the atomic mobilities of O and Al in the alloy substrate at the reacting oxide/alloy interface, (ii) the solubility of O in the substrate and (iii) the compositional constraint due to the thermodynamically preferred formation of an amorphous oxide phase of singular composition.

  5. Stability of (Fe-Tm-B) amorphous alloys: relaxation and crystallization phenomena

    International Nuclear Information System (INIS)

    Zemcik, T.

    1994-01-01

    Fe-Tm-B base (TM = transition metal) amorphous alloys (metallic glasses) are thermodynamically metastable. This limits their use as otherwise favourable materials, e.g. magnetically soft, corrosion resistant and mechanically firm. By analogy of the mechanical strain-stress dependence, at a certain degree of thermal activation the amorphous structure reaches its limiting state where it changes its character and physical properties. Relaxation and early crystallization processes in amorphous alloys, starting already around 100 C, are reviewed involving subsequently stress relief, free volume shrinking, topological and chemical ordering, pre-crystallization phenomena up to partial (primary) crystallization. Two diametrically different examples are demonstrated from among the soft magnetic materials: relaxation and early crystallization processes in the Fe-Co-B metallic glasses and controlled crystallization of amorphous ribbons yielding rather modern nanocrystalline ''Finemet'' alloys where late relaxation and pre-crystallization phenomena overlap when forming extremely dispersive and fine-grained nanocrystals-in-amorphous-sauce structure. Moessbauer spectroscopy seems to be unique for magnetic and phase analysis of such complicated systems. (orig.)

  6. Moessbauer spectra studied of spin-wave excitation for amorphous alloys

    International Nuclear Information System (INIS)

    Huang Zhigao

    1992-01-01

    The average hyperfine fields of amorphous Fe 70 Co 20 Zr 10 , Fe 80 Co 10 Zr 10 and Fe 86 Co 4 -Zr 10 alloys at different temperature were measured by the Moessbauer technique. According to Bloch's T 3/2 relation, spin-wave excitations of above amorphous alloys were studied and their B 3/2 values were found to be 0.40 +- 0.02, 0.45 +- 0.02 and 0.88 +- 0.04, respectively. Comparing the B 3/2 values of crystals, a-Fe-(Co, Ni)-ME, a-Fe-(Cr, Mn, W)-ME and a-Fe-B or TM-Zr invar alloys, the obvious difference among them was observed. Above results can be explained well by the exchange coupling fluctuation and the disorder of spatial arrangement. In this work, the difference between the stiffness coefficients obtained from the inelastic neutron scattering and the magnetization measurements for amorphous Invar alloys was also explained

  7. TEM study of amorphous alloys produced by ion implantation

    International Nuclear Information System (INIS)

    Johnson, E.; Grant, W.A.; Wohlenberg, P.; Hansen, P.; Chadderton, L.T.

    1978-01-01

    Ion implantation is a technique for introducing foreign elements into surface layers of solids. Ions, as a suitably accelerated beam, penetrate the surface, slow down by collisions with target atoms to produce a doped layer. This non-equilibrium technique can provide a wide range of alloys without the restrictions imposed by equilibrium phase diagrams. This paper reports on the production of some amorphous transition metal-metalloid alloys by implantation. Thinned foils of Ni, Fe and stainless steel were implanted at room temperature with Dy + and P + ions at doses between 10 13 - 10 17 ions/cm 2 at energies of 20 and 40 keV respectively. Transmission electron microscopy and selected area diffraction analysis were used to investigate the implanted specimens. Radial diffracted intensity measurements confirmed the presence of an amorphous implanted layer. The peak positions of the maxima are in good agreement with data for similar alloys produced by conventional techniques. Only certain ion/target combinations produce these amorphous layers. Implantations at doses lower than those needed for amorphization often result in formation of new crystalline phases such as an h.c.p. phase in nickel and a b.c.c. phase in stainless steel. (Auth.)

  8. Indentation creep behaviors of amorphous Cu-based composite alloys

    Science.gov (United States)

    Song, Defeng; Ma, Xiangdong; Qian, Linfang

    2018-04-01

    This work reports the indentation creep behaviors of two Si2Zr3/amorphous Cu-based composite alloys utilizing nanoindentation technique. By analysis with Kelvin model, the retardation spectra of alloys at different positions, detached and attached regions to the intermetallics, were deduced. For the indentation of detached regions to Si2Zr3 intermetallics in both alloys, very similarity in creep displacement can be observed and retardation spectra show a distinct disparity in the second retardation peak. For the indentation of detached regions, the second retardation spectra also display distinct disparity. At both positions, the retardation spectra suggest that Si elements may lead to the relatively dense structure in the amorphous matrix and to form excessive Si2Zr3 intermetallics which may deteriorate the plastic deformation of current Cu-based composite alloys.

  9. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

    International Nuclear Information System (INIS)

    Tsai, M.Y.; Streetman, B.G.

    1979-01-01

    Electrical properties of recrystallized amorphous silicon layers, formed by BF + 2 implants or Si + +B + implants, have been studied by differential resistivity and Hall-effect measurements. Electrical carrier distribution profiles show that boron atoms inside the amorphized Si layers can be fully activated during recrystallization at 550 0 C. The mobility is also recovered. However, the tail of the B distribution, located inside a damaged region near the original amorphous-crystalline interface, remains inactive. This inactive tail has been observed for all samples implanted with BF + 2 . Only in a thicker amorphous layer, formed for example by Si + predamage implants, can the entire B profile be activated. The etch rate of amorphous silicon in HF and the effect of fluorine on the recrystallization rate are also reported

  10. Fluctuation microscopy analysis of amorphous silicon models

    Energy Technology Data Exchange (ETDEWEB)

    Gibson, J.M., E-mail: jmgibson@fsu.edu [Northeastern University, Department of Physics, Boston MA 02115 (United States); FAMU/FSU Joint College of Engineering, 225 Pottsdamer Street, Tallahassee, FL 32310 (United States); Treacy, M.M.J. [Arizona State University, Department of Physics, Tempe AZ 85287 (United States)

    2017-05-15

    Highlights: • Studied competing computer models for amorphous silicon and simulated fluctuation microscopy data. • Show that only paracrystalline/random network composite can fit published data. • Specifically show that pure random network or random network with void models do not fit available data. • Identify a new means to measure volume fraction of ordered material. • Identify unreported limitations of the Debye model for simulating fluctuation microscopy data. - Abstract: Using computer-generated models we discuss the use of fluctuation electron microscopy (FEM) to identify the structure of amorphous silicon. We show that a combination of variable resolution FEM to measure the correlation length, with correlograph analysis to obtain the structural motif, can pin down structural correlations. We introduce the method of correlograph variance as a promising means of independently measuring the volume fraction of a paracrystalline composite. From comparisons with published data, we affirm that only a composite material of paracrystalline and continuous random network that is substantially paracrystalline could explain the existing experimental data, and point the way to more precise measurements on amorphous semiconductors. The results are of general interest for other classes of disordered materials.

  11. Fluctuation microscopy analysis of amorphous silicon models

    International Nuclear Information System (INIS)

    Gibson, J.M.; Treacy, M.M.J.

    2017-01-01

    Highlights: • Studied competing computer models for amorphous silicon and simulated fluctuation microscopy data. • Show that only paracrystalline/random network composite can fit published data. • Specifically show that pure random network or random network with void models do not fit available data. • Identify a new means to measure volume fraction of ordered material. • Identify unreported limitations of the Debye model for simulating fluctuation microscopy data. - Abstract: Using computer-generated models we discuss the use of fluctuation electron microscopy (FEM) to identify the structure of amorphous silicon. We show that a combination of variable resolution FEM to measure the correlation length, with correlograph analysis to obtain the structural motif, can pin down structural correlations. We introduce the method of correlograph variance as a promising means of independently measuring the volume fraction of a paracrystalline composite. From comparisons with published data, we affirm that only a composite material of paracrystalline and continuous random network that is substantially paracrystalline could explain the existing experimental data, and point the way to more precise measurements on amorphous semiconductors. The results are of general interest for other classes of disordered materials.

  12. Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

    NARCIS (Netherlands)

    Munyeme, Geoffrey

    2003-01-01

    We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction

  13. Creep of FINEMET alloy at amorphous to nanocrystalline transition

    NARCIS (Netherlands)

    Csach, K.; Miškuf, J.; Juríková, A.; Ocelík, V.

    2009-01-01

    The application of FINEMET-type materials with specific magnetic properties prepared by the crystallization of amorphous alloys is often limited by their brittleness. The structure of these materials consists of nanosized Fe-based grains surrounded with amorphous phase. Then the final macroscopic

  14. Determination of boron in amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Grazhulene, S.S.; Grossman, O.V.; Kuntscher, K.K.; Malygina, L.I.; Muller, E.N.; Telegin, G.F.

    1985-10-01

    In the determination of boron in amorphous alloys containingFe, Co, B, Si, Ni, and P having unusal magnetic and electrical properties, precise analysis and rapid analysis are necessary. To improve the metrological properties of the existing procedure, to find a rapid determination of boron in amorphous alloys, and to verify the accuracy of the results, in the present work the optimization of the photometric determination after extraction of the BF/sup -//sub 4/ ion pair with methylene blue has been studied, and a boron determination by flame photometry using selective methylation has been developed. The determination of boron by the flame photometric and spectrophotometric methods is shown. When a highly precise determination is needed, the spectrophotometric procedure can be used. This procedure is distinguished by its labor intensity and duration. When the need for reproducibility is less severe, the rapid flame photometric procedure is best.

  15. On electronic structure of polymer-derived amorphous silicon carbide ceramics

    Science.gov (United States)

    Wang, Kewei; Li, Xuqin; Ma, Baisheng; Wang, Yiguang; Zhang, Ligong; An, Linan

    2014-06-01

    The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior.

  16. Effect of Silicon in U-10Mo Alloy

    Energy Technology Data Exchange (ETDEWEB)

    Kautz, Elizabeth J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Devaraj, Arun [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kovarik, Libor [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lavender, Curt A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Joshi, Vineet V. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2017-08-31

    This document details a method for evaluating the effect of silicon impurity content on U-10Mo alloys. Silicon concentration in U-10Mo alloys has been shown to impact the following: volume fraction of precipitate phases, effective density of the final alloy, and 235-U enrichment in the gamma-UMo matrix. This report presents a model for calculating these quantities as a function of Silicon concentration, which along with fuel foil characterization data, will serve as a reference for quality control of the U-10Mo final alloy Si content. Additionally, detailed characterization using scanning electron microscope imaging, transmission electron microscope diffraction, and atom probe tomography showed that Silicon impurities present in U-10Mo alloys form a Si-rich precipitate phase.

  17. Nickel-induced crystallization of amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, J A; Arce, R D; Buitrago, R H [INTEC (CONICET-UNL), Gueemes 3450, S3000GLN Santa Fe (Argentina); Budini, N; Rinaldi, P, E-mail: jschmidt@intec.unl.edu.a [FIQ - UNL, Santiago del Estero 2829, S3000AOM Santa Fe (Argentina)

    2009-05-01

    The nickel-induced crystallization of hydrogenated amorphous silicon (a-Si:H) is used to obtain large grained polycrystalline silicon thin films on glass substrates. a-Si:H is deposited by plasma enhanced chemical vapour deposition at 200 deg. C, preparing intrinsic and slightly p-doped samples. Each sample was divided in several pieces, over which increasing Ni concentrations were sputtered. Two crystallization methods are compared, conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The crystallization was followed by optical microscopy and scanning electron microscopy observations, X-ray diffraction, and reflectance measurements in the UV region. The large grain sizes obtained - larger than 100{mu}m for the samples crystallized by CFA - are very encouraging for the preparation of low-cost thin film polycrystalline silicon solar cells.

  18. Crystallization characteristics of amorphous alloys of FeZr

    International Nuclear Information System (INIS)

    Rozhan, M. Idrus; Grundy, P.J.

    1993-01-01

    The crystallization characteristics of sputter-deposited amorphous alloys of Fe 100-x Zr x prepared at zirconium concentrations between 9 and 89 at.% was investigated. The transformation of the alloys from the amorphous to the crystalline state has been examined by thermal analysis, electrical resistance and X-ray diffraction. The crystallization temperatures were determined by differential scanning calorimetry (DSC) and electrical resistance as a function of temperature. The final phases were determined by X-ray diffraction. The activation energies were calculated from the Kissinger plots and the heats of crystallization were calculated and correlations between the thermal analysis and the resistance results are presented

  19. Emission of blue light from hydrogenated amorphous silicon carbide

    Science.gov (United States)

    Nevin, W. A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y.

    1994-04-01

    THE development of new electroluminescent materials is of current technological interest for use in flat-screen full-colour displays1. For such applications, amorphous inorganic semiconductors appear particularly promising, in view of the ease with which uniform films with good mechanical and electronic properties can be deposited over large areas2. Luminescence has been reported1 in the red-green part of the spectrum from amorphous silicon carbide prepared from gas-phase mixtures of silane and a carbon-containing species (usually methane or ethylene). But it is not possible to achieve blue luminescence by this approach. Here we show that the use of an aromatic species-xylene-as the source of carbon during deposition results in a form of amorphous silicon carbide that exhibits strong blue luminescence. The underlying structure of this material seems to be an unusual combination of an inorganic silicon carbide lattice with a substantial 'organic' π-conjugated carbon system, the latter dominating the emission properties. Moreover, the material can be readily doped with an electron acceptor in a manner similar to organic semiconductors3, and might therefore find applications as a conductivity- or colour-based chemical sensor.

  20. Aluminium base amorphous and crystalline alloys with Fe impurity

    International Nuclear Information System (INIS)

    Sitek, J.; Degmova, J.

    2006-01-01

    Aluminium base alloys show remarkable mechanical properties, however their low thermal stability still limits the technological applications. Further improvement of mechanical properties can be reached by partial crystallization of amorphous alloys, which gives rise to nanostructured composites. Our work was focused on aluminium based alloys with Fe, Nb and V additions. Samples of nominal composition Al 90 Fe 7 Nb 3 and Al 94 Fe 2 V 4 were studied in amorphous state and after annealing up to 873 K. From Moessbauer spectra taken on the samples in amorphous state the value of f-factor was determined as well as corresponding Debye temperatures were calculated. Annealing at higher temperatures induced nano and microcrystalline crystallization. Moessbauer spectra of samples annealed up to 573 K are fitted only by distribution of quadrupole doublets corresponding to the amorphous state. An increase of annealing temperature leads to the structural transformation, which consists in growth of nanometer sized aluminium nuclei. This is partly reflected in Moessbauer parameters. After annealing at 673 K intermetallic phase Al 3 Fe and other Al-Fe phases are created. In this case Moessbauer spectra are fitted by quadrupole doublets. During annealing up to 873 K large grains of Fe-Al phases are created. (authors)

  1. NEW METHOD OF PRODUCTION OF ALUNINUM SILICON ALLOYS

    Directory of Open Access Journals (Sweden)

    V. K. Afanasiev

    2015-01-01

    Full Text Available A new approach to the preparation of aluminum-silicon alloys, based on the concept of the leading role of hydrogen in determining the structure and properties of alloys consists in using as charge materials of silicon dioxide (silica and hydrogen instead of crystalline silicon was described. Practical ways to implement the new method were proposed on the example of industrial alloys prepared on charge synthetic alloy. It is shown that the application of the proposed method allows to improve the mechanical properties and reduce the coefficient of thermal expansion alloys, Al-Si. The effect of heat treatment on mechanical properties, density and thermal expansion of synthetic alloys was researched.

  2. Moessbauer study of amorphous Fe-P alloys

    International Nuclear Information System (INIS)

    Takacs, L.; Toth-Kadar, E.

    1981-01-01

    Preliminary Moessbauer results are represented on electrodeposited Fe-P amorphous alloys. Very broad hyperfine field distributions and relatively large isomer shifts have been found. Problems worth of further investigation are discussed in details. (author)

  3. Mechanism for hydrogen diffusion in amorphous silicon

    International Nuclear Information System (INIS)

    Biswas, R.; Li, Q.; Pan, B.C.; Yoon, Y.

    1998-01-01

    Tight-binding molecular-dynamics calculations reveal a mechanism for hydrogen diffusion in hydrogenated amorphous silicon. Hydrogen diffuses through the network by successively bonding with nearby silicons and breaking their Si endash Si bonds. The diffusing hydrogen carries with it a newly created dangling bond. These intermediate transporting states are densely populated in the network, have lower energies than H at the center of stretched Si endash Si bonds, and can play a crucial role in hydrogen diffusion. copyright 1998 The American Physical Society

  4. Noise and degradation of amorphous silicon devices

    NARCIS (Netherlands)

    Bakker, J.P.R.

    2003-01-01

    Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenated amorphous silicon (a-Si:H). The material is applied in sandwich structures and in thin-film transistors (TFTs). In a sandwich configuration of an intrinsic layer and two thin doped layers, the

  5. Amorphous alloys in the U-Cr-V system

    International Nuclear Information System (INIS)

    Ray, R.; Musso, E.

    1979-01-01

    Amorphous uranium-chromium-vanadium alloys and a method of producing them are described. The uranium content of the alloys may vary between 60 and 80 atom percent, and chromium and vanadium between 0 and 40 atom percent, most particularly between 20 and 40 atom percent. A maximum of 10 atom percent of Cr or V may be replaced by other alloying elements, including metalloids and at least one transtion metal element. (LL)

  6. Crystalline-to-amorphous phase transformation in mechanically alloyed Fe50W50 powders

    International Nuclear Information System (INIS)

    Sherif El-Eskandarany, M.S.; Sumiyama, K.; Suzuki, K.

    1997-01-01

    A mechanical alloying process via a ball milling technique has been applied for preparing amorphous Fe 50 W 50 alloy powders. The results have shown that during the first and second stages of milling (0 to 360 ks) W atoms emigrate to Fe lattices to form nanocrystalline b.c.c. Fe-W solid solution, with a grain size of about 7 nm in diameter. After 720 ks of the milling time, this solid solution was transformed to an amorphous Fe-W alloy coexisting with the residual fraction of the unprocessed W powders. During the last stage of milling (720 to 1,440 ks) all of this residual W powder reacts with the amorphous phase to form a homogeneous Fe 50 W 50 amorphous alloy. The crystallization temperature and the enthalpy change of crystallization of amorphous Fe 50 W 50 powders milled for 1,440 ks were measured to be 860 K and -9kJ/mol, respectively. The amorphous Fe 50 W 50 powder produced is almost paramagnetic at room temperature. The powder comprises homogeneous and smooth spheres with an average size of about 0.5 microm in diameter

  7. Evidence of localized amorphous silicon clustering from Raman depth-probing of silicon nanocrystals in fused silica

    International Nuclear Information System (INIS)

    Barba, D; Martin, F; Ross, G G

    2008-01-01

    Silicon nanocrystals (Si-nc) and amorphous silicon (α-Si) produced by silicon implantation in fused silica have been studied by micro-Raman spectroscopy. Information regarding the Raman signature of the α-Si phonon excitation was extracted from Raman depth-probing measurements using the phenomenological phonon confinement model. The spectral deconvolution of the Raman measurements recorded at different laser focusing depths takes into account both the Si-nc size variation and the Si-nc spatial distribution within the sample. The phonon peak associated with α-Si around 470 cm -1 is greatest for in-sample laser focusing, indicating that the formation of amorphous silicon is more important in the region containing a high concentration of silicon excess, where large Si-nc are located. As also observed for Si-nc systems prepared by SiO x layer deposition, this result demonstrates the presence of α-Si in high excess Si implanted Si-nc systems

  8. Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Liu Xuanyong; Chu, Paul K.; Ding Chuanxian

    2007-01-01

    Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans

  9. Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xuanyong [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China) and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: xyliu@mail.sic.ac.cn; Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: paul.chu@cityu.edu.hk; Ding Chuanxian [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

    2007-01-15

    Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter <1 0 0> silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans.

  10. GHz-rate optical parametric amplifier in hydrogenated amorphous silicon

    International Nuclear Information System (INIS)

    Wang, Ke-Yao; Foster, Amy C

    2015-01-01

    We demonstrate optical parametric amplification operating at GHz-rates at telecommunications wavelengths using a hydrogenated amorphous silicon waveguide through the nonlinear optical process of four-wave mixing. We investigate how the parametric amplification scales with repetition rate. The ability to achieve amplification at GHz-repetition rates shows hydrogenated amorphous silicon’s potential for telecommunication applications and a GHz-rate optical parametric oscillator. (paper)

  11. Pressure effects on Al89La6Ni5 amorphous alloy crystallization

    DEFF Research Database (Denmark)

    Zhuang, Yanxin; Jiang, Jianzhong; Zhou, T. J.

    2000-01-01

    The pressure effect on the crystallization of the Al89La6Ni5 amorphous alloy has been investigated by in situ high-pressure and high-temperature x-ray powder diffraction using synchrotron radiation. The amorphous alloy crystallizes in two steps in the pressure range studied (0-4 GPa). The first p...

  12. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters

    International Nuclear Information System (INIS)

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J.

    1999-01-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p- and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)23 refs

  13. A comparison of degradation in three amorphous silicon PV module technologies

    Energy Technology Data Exchange (ETDEWEB)

    Radue, C.; van Dyk, E.E. [Physics Department, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2010-03-15

    Three commercial amorphous silicon modules manufactured by monolithic integration and consisting of three technology types were analysed in this study. These modules were deployed outdoors for 14 months and underwent degradation. All three modules experienced the typical light-induced degradation (LID) described by the Staebler-Wronski effect, and this was followed by further degradation. A 14 W single junction amorphous silicon module degraded by about 45% of the initial measured maximum power output (P{sub MAX}) at the end of the study. A maximum of 30% of this has been attributed to LID and the further 15% to cell mismatch and cell degradation. The other two modules, a 64 W triple junction amorphous silicon module, and a 68 W flexible triple junction amorphous silicon module, exhibited LID followed by seasonal variation in the degraded P{sub MAX}. The 64 W module showed a maximum degradation in P{sub MAX} of about 22%. This is approximately 4% more than the manufacturer allowed for the initial LID. However, the seasonal variation in P{sub MAX} seems to be centred around the manufacturer's rating ({+-}4%). The 68 W flexible module has shown a maximum decrease in P{sub MAX} of about 27%. This decrease is about 17% greater than the manufacturer allowed for the initial LID. (author)

  14. Amorphization of silicon by femtosecond laser pulses

    International Nuclear Information System (INIS)

    Jia, Jimmy; Li Ming; Thompson, Carl V.

    2004-01-01

    We have used femtosecond laser pulses to drill submicron holes in single crystal silicon films in silicon-on-insulator structures. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis of material adjacent to the ablated holes indicates the formation of a layer of amorphous Si. This demonstrates that even when material is ablated using femtosecond pulses near the single pulse ablation threshold, sufficient heating of the surrounding material occurs to create a molten zone which solidifies so rapidly that crystallization is bypassed

  15. Modification of amorphous metal alloys and nanocrystals by radiation

    International Nuclear Information System (INIS)

    Holkova, D.; Sitek, J.

    2017-01-01

    The paper deals with radiation damage and modification of amorphous metal alloys by neutron irradiation and electrons. Initial experiments were focused on electron irradiation, with various amorphous precursors as well as nanocrystalline alloys: Fe_8_1Nb_7B_1_2, (Fe_3Ni_1)_8_1Nb_7B_1_2, (Fe_3Ni_1)_8_1Nb_7B_1_2 and NANOMET Fe_8_1_._6B_9_._6Si_4_._8P_3Cu_1 being selected for the irradiated objects. The experimental part summarizes the previous results obtained by Moessbauer spectroscopy as well as XRD. (authors)

  16. Graphene as a transparent electrode for amorphous silicon-based solar cells

    International Nuclear Information System (INIS)

    Vaianella, F.; Rosolen, G.; Maes, B.

    2015-01-01

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles

  17. Graphene as a transparent electrode for amorphous silicon-based solar cells

    Science.gov (United States)

    Vaianella, F.; Rosolen, G.; Maes, B.

    2015-06-01

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

  18. Graphene as a transparent electrode for amorphous silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vaianella, F., E-mail: Fabio.Vaianella@umons.ac.be; Rosolen, G.; Maes, B. [Micro- and Nanophotonic Materials Group, Faculty of Science, University of Mons, 20 place du Parc, B-7000 Mons (Belgium)

    2015-06-28

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

  19. Structural and electrochemical study of the reaction of lithium with silicon nanowires

    KAUST Repository

    Chan, Candace K.

    2009-04-01

    The structural transformations of silicon nanowires when cycled against lithium were evaluated using electrochemical potential spectroscopy and galvanostatic cycling. During the charge, the nanowires alloy with lithium to form an amorphous LixSi compound. At potentials <50 mV, a structural transformation occurs. In studies on micron-sized particles previously reported in the literature, this transformation is a crystallization to a metastable Li15Si4 phase. X-ray diffraction measurements on the Si nanowires, however, show that they are amorphous, suggesting that a different amorphous phase (LiySi) is formed. Lithium is removed from this phase in the discharge to form amorphous silicon. We have found that limiting the voltage in the charge to 70 mV results in improved efficiency and cyclability compared to charging to 10 mV. This improvement is due to the suppression of the transformation at low potentials, which alloys for reversible cycling of amorphous silicon nanowires. © 2008 Elsevier B.V. All rights reserved.

  20. Fiber Optic Excitation of Silicon Microspheres in Amorphous and Crystalline Fluids

    NARCIS (Netherlands)

    Yilmaz, H.; Murib, M.S.; Serpenguzel, A.

    2016-01-01

    This study investigates the optical resonance spectra of free-standing monolithic single crystal silicon microspheres immersed in various amorphous fluids, such as air, water, ethylene glycol, and 4-Cyano-4’-pentylbiphenyl nematic liquid crystal. For the various amorphous fluids,

  1. Study of oxidation behaviour of Zr-based bulk amorphous alloy Zr 65 ...

    Indian Academy of Sciences (India)

    The oxidation behaviour of Zr-based bulk amorphous alloy Zr65Cu17.5Ni10Al7.5 has been studied in air environment at various temperatures in the temperature range 591–684 K using a thermogravimetric analyser (TGA). The oxidation kinetics of the alloy in the amorphous phase obeys the parabolic rate law for oxidation ...

  2. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

    International Nuclear Information System (INIS)

    Pichon, L; Rogel, R; Demami, F

    2010-01-01

    We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

  3. Magnetic and electrical properties of several Mn-based amorphous alloys

    Science.gov (United States)

    Obi, Y.; Morita, H.; Fujimori, H.

    1987-03-01

    Magnetic and electrical properties of amorphous Mn-Y, Mn-Zr, and Mn-Nb alloys have been investigated. All these alloys have a temperature-dependent susceptibility which is well fitted by a Curie-Weiss law. This implies the existence of localized magnetic moments associated with the Mn atoms. In addition, amorphous Mn-Y alloys exhibit spin-glass characteristics at low temperature. The experimental results of the electrical resistivity show that the temperature coefficient of resistivity (TCR) of both Mn-Y and Mn-Zr are negative, while Mn-Nb has a positive TCR. On the other hand, the resistivity-temperature curves of Mn-Zr and Mn-Nb have nearly the same tendency but are different from that of Mn-Y.

  4. Optical properties of amorphous silicon: Some problem areas

    International Nuclear Information System (INIS)

    Ravindra, N.M.; Chelle, F. de; Ance, C.; Ferraton, J.P.; Berger, J.M.; Coulibaly, S.P.

    1983-08-01

    In this presentation we essentially attempt to throw light on some problem areas concerning the various optical properties of amorphous silicon. The problems seem to emerge from the classical methods employed to determine the optical properties like the optical gap, urbach tail parameter and other related characteristics. Additional problems have emerged in recent years by virtue of many attempts to generalize the property-behaviour relationships for amorphous silicon without attributing any importance to the method of preparation of the films. It should be noted here that although many authors believe disorder to be the controlling parameter, we are of the opinion that at least for films containing fairly large concentrations of hydrogen, the hydrogen concentration has an equally important role to play. The present study has been carried out for films prepared by glow-discharge and chemical vapour deposition. (author)

  5. Photo stability Assessment in Amorphous-Silicon Solar Cells

    International Nuclear Information System (INIS)

    Gandia, J. J.; Carabe, J.; Fabero, F.; Jimenez, R.; Rivero, J. M.

    1999-01-01

    The present status of amorphous-silicon-solar-cell research and development at CIEMAT requires the possibility to characterise the devices prepared from the point of view of their stability against sunlight exposure. Therefore a set of tools providing such a capacity has been developed. Together with an introduction to photovoltaic applications of amorphous silicon and to the photodegradation problem, the present work describes the process of setting up these tools. An indoor controlled photodegradation facility has been designed and built, and a procedure has been developed for the measurement of J-V characterisation in well established conditions. This method is suitable for all kinds of solar cells, even for those for which no model is still available. The photodegradation and characterisation of some cells has allowed to validate both the new testing facility and method. (Author) 14 refs

  6. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

    Science.gov (United States)

    Marrs, Michael A; Raupp, Gregory B

    2016-07-26

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

  7. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    TECS

    Film adhesion in amorphous silicon solar cells. A R M YUSOFF*, M N SYAHRUL and K HENKEL. Malaysia Energy Centre, 8th Floor, North Wing, Sapura @ Mines, 7, Jalan Tasik, The Mines Resort City,. 43300 Seri Kembangan, Selangor Darul Ehsan. MS received 11 April 2007. Abstract. A major issue encountered ...

  8. Minor-Cu doped soft magnetic Fe-based FeCoBCSiCu amorphous alloys with high saturation magnetization

    Science.gov (United States)

    Li, Yanhui; Wang, Zhenmin; Zhang, Wei

    2018-05-01

    The effects of Cu alloying on the amorphous-forming ability (AFA) and magnetic properties of the P-free Fe81Co5B11C2Si1 amorphous alloy were investigated. Addition of ≤ 1.0 at.% Cu enhances the AFA of the base alloy without significant deterioration of the soft magnetic properties. The Fe80.5Co5B11C2Si1Cu0.5 alloy with the largest critical thickness for amorphous formation of ˜35 μm possesses a high saturation magnetization (Bs) of ˜1.78 T, low coercivity of ˜14.6 A/m, and good bending ductility upon annealing in a wide temperature range of 513-553 K with maintaining the amorphous state. The fabrication of the new high-Fe-content Fe-Co-B-C-Si-Cu amorphous alloys by minor doping of Cu gives a guideline to developing high Bs amorphous alloys with excellent AFA.

  9. Moessbauer and transport studies of amorphous and icosahedral Zr-Ni-Cu-Ag-Al alloys

    International Nuclear Information System (INIS)

    Stadnik, Z.M.; Rapp, O.; Srinivas, V.; Saida, J.; Inoue, A.

    2002-01-01

    The alloy Zr 65 Al 7.5 Ni 10 Cu 7.3 Fe 0.2 Ag 10 in the amorphous and icosahedral states, and the bulk amorphous alloy Zr 65 Al 7.5 Ni 10 Cu 7.5 Ag 10 , have been studied with 57 Fe Moessbauer spectroscopy, electrical resistance and magnetoresistance techniques. The average quadrupole splitting in both alloys decreases with temperature as T 3/2 . The average quadrupole splitting in the icosahedral alloy is the largest ever reported for a metallic system. The lattice vibrations of the Fe atoms in the amorphous and icosahedral alloys are well described by a simple Debye model, with the characteristic Moessbauer temperatures of 379(29) and 439(28) K, respectively. Amorphous alloys Zr 65 Al 7. )5Ni 10 Cu 7.5 Ag 10 and Zr 65 Al 7.5 Ni 10 Cu 7.3 Fe 0.2 Ag 10 have been found to be superconducting with the transition temperature, T c , of about 1.7 K. The magnitude of Tc and the critical field slope at Tc are in agreement with previous work on Zr-based amorphous superconductors, while the low-temperature normal state resistivity is larger than typical results for binary and ternary Zr-based alloys. The resistivity of icosahedral Zr 65 Al 7.5 Ni 10 Cu 7.3 Fe 0.2 Ag 10 is larger than that for the amorphous ribbon of the same composition, as inferred both from direct measurements on the ribbons and from the observed magnetoresistance. However the icosahedral sample is non-superconducting in the measurement range down to 1.5 K. The results for the resistivity and the superconducting T c both suggest a stronger electronic disorder in the icosahedral phase than in the amorphous phase. (author)

  10. Achievement report for fiscal 1991 on Sunshine Program-entrusted research and development. Research and development of amorphous silicon solar cells (Research on amorphous silicon interface); 1991 nendo amorphous silicon taiyo denchi no kenkyu kaihatsu seika hokokusho. Amorphous silicon no kaimen no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1992-03-01

    The amorphous solar cell interface has been under study for the enhancement of efficiency and reliability in amorphous solar cells, and this is the compilation of the results achieved in fiscal 1991. In the effort to enhance delta-doped amorphous silicon solar cell efficiency, an amorphous Si solar cell is built using a ZnO film as the transparent conductive film. As the result, an a-Si solar cell with a conversion efficiency of 11.5% is obtained. In the research on the suppression of photodegradation in a-Si, from the viewpoint that a reduction in the amount of hydrogen contained excessively in the film will be effective in decelerating photodegradation, a photoexcited hydrogen radical treatment method is newly proposed, and basic studies are conducted on it. As the result, it is found that an a-Si film processed by a 20-second hydrogen treatment at a substrate temperature of 460 degrees C exhibits a lower photodegradation rate than an ordinary a-Si film. In the research on the deposition of amorphous Si film, a VHF frequency is used instead of 13.56MHz for plasma, and an amorphous Si film is deposited efficiently at a lower voltage at which ions cause less damage. (NEDO)

  11. Effect Of Low-Temperature Annealing On The Properties Of Ni-P Amorphous Alloys Deposited Via Electroless Plating

    Directory of Open Access Journals (Sweden)

    Zhao Guanlin

    2015-06-01

    Full Text Available Amorphous Ni-P alloys were prepared via electroless plating and annealing at 200°C at different times to obtain different microstructures. The effects of low-temperature annealing on the properties of amorphous Ni-P alloys were studied. The local atomic structure of the annealed amorphous Ni-P alloys was analyzed by calculating the atomic pair distribution function from their X-ray diffraction patterns. The results indicate that the properties of the annealed amorphous Ni-P alloys are closely related to the order atomic cluster size. However, these annealed Ni-P alloys maintained their amorphous structure at different annealing times. The variation in microhardness is in agreement with the change in cluster size. By contrast, the corrosion resistance of the annealed alloys in 3.5 wt% NaCl solution increases with the decrease in order cluster size.

  12. Converting sunlight into red light in fluorosilicate glass for amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ming, Chengguo, E-mail: mingchengguo1978@163.com [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Song, Feng [Photonics Center, College of Physical Science, Nankai University, Tianjin 300071 (China); Ren, Xiaobin [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Yuan, Fengying; Qin, Yueting [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China); Photonics Center, College of Physical Science, Nankai University, Tianjin 300071 (China); An, Liqun; Cai, Yuanxue [Physics Department, School of Sciences, Tianjin University of Science & Technology, Tianjin 300457 (China)

    2017-03-15

    Fluorosilicate glass was prepared by high-temperature melting method to explore highly efficient luminescence materials for amorphous silicon solar cells. Absorption, excitation and emission spectra of the glass were measured. The optical characters of the glass were discussed in details. The glass can efficiently convert sunlight into red light. Our glass can be applied to amorphous silicon solar cells as a converter of solar spectrum.

  13. Amorphous Metallic Alloys: Pathways for Enhanced Wear and Corrosion Resistance

    Science.gov (United States)

    Aditya, Ayyagari; Felix Wu, H.; Arora, Harpreet; Mukherjee, Sundeep

    2017-11-01

    Amorphous metallic alloys are widely used in bulk form and as coatings for their desirable corrosion and wear behavior. Nevertheless, the effects of heat treatment and thermal cycling on these surface properties are not well understood. In this study, the corrosion and wear behavior of two Zr-based bulk metallic glasses were evaluated in as-cast and thermally relaxed states. Significant improvement in wear rate, friction coefficient, and corrosion penetration rate was seen for both alloys after thermal relaxation. A fully amorphous structure was retained with thermal relaxation below the glass transition. There was an increase in surface hardness and elastic modulus for both alloys after relaxation. The improvement in surface properties was explained based on annihilation of free volume.

  14. Directed dewetting of amorphous silicon film by a donut-shaped laser pulse

    International Nuclear Information System (INIS)

    Yoo, Jae-Hyuck; Zheng, Cheng; Grigoropoulos, Costas P; In, Jung Bin; Sakellari, Ioanna; Raman, Rajesh N; Matthews, Manyalibo J; Elhadj, Selim

    2015-01-01

    Irradiation of a thin film with a beam-shaped laser is proposed to achieve site-selectively controlled dewetting of the film into nanoscale structures. As a proof of concept, the laser-directed dewetting of an amorphous silicon thin film on a glass substrate is demonstrated using a donut-shaped laser beam. Upon irradiation of a single laser pulse, the silicon film melts and dewets on the substrate surface. The irradiation with the donut beam induces an unconventional lateral temperature profile in the film, leading to thermocapillary-induced transport of the molten silicon to the center of the beam spot. Upon solidification, the ultrathin amorphous silicon film is transformed to a crystalline silicon nanodome of increased height. This morphological change enables further dimensional reduction of the nanodome as well as removal of the surrounding film material by isotropic silicon etching. These results suggest that laser-based dewetting of thin films can be an effective way for scalable manufacturing of patterned nanostructures. (paper)

  15. Directed dewetting of amorphous silicon film by a donut-shaped laser pulse.

    Science.gov (United States)

    Yoo, Jae-Hyuck; In, Jung Bin; Zheng, Cheng; Sakellari, Ioanna; Raman, Rajesh N; Matthews, Manyalibo J; Elhadj, Selim; Grigoropoulos, Costas P

    2015-04-24

    Irradiation of a thin film with a beam-shaped laser is proposed to achieve site-selectively controlled dewetting of the film into nanoscale structures. As a proof of concept, the laser-directed dewetting of an amorphous silicon thin film on a glass substrate is demonstrated using a donut-shaped laser beam. Upon irradiation of a single laser pulse, the silicon film melts and dewets on the substrate surface. The irradiation with the donut beam induces an unconventional lateral temperature profile in the film, leading to thermocapillary-induced transport of the molten silicon to the center of the beam spot. Upon solidification, the ultrathin amorphous silicon film is transformed to a crystalline silicon nanodome of increased height. This morphological change enables further dimensional reduction of the nanodome as well as removal of the surrounding film material by isotropic silicon etching. These results suggest that laser-based dewetting of thin films can be an effective way for scalable manufacturing of patterned nanostructures.

  16. Thermophysical Property Measurements of Silicon-Transition Metal Alloys

    Science.gov (United States)

    Banish, R. Michael; Erwin, William R.; Sansoucie, Michael P.; Lee, Jonghyun; Gave, Matthew A.

    2014-01-01

    Metals and metallic alloys often have high melting temperatures and highly reactive liquids. Processing reactive liquids in containers can result in significant contamination and limited undercooling. This is particularly true for molten silicon and it alloys. Silicon is commonly termed "the universal solvent". The viscosity, surface tension, and density of several silicon-transition metal alloys were determined using the Electrostatic Levitator system at the Marshall Space Flight Center. The temperature dependence of the viscosity followed an Arrhenius dependence, and the surface tension followed a linear temperature dependence. The density of the melts, including the undercooled region, showed a linear behavior as well. Viscosity and surface tension values were obtain for several of the alloys in the undercooled region.

  17. Nonlinear Optical Functions in Crystalline and Amorphous Silicon-on-Insulator Nanowires

    DEFF Research Database (Denmark)

    Baets, R.; Kuyken, B.; Liu, X.

    2012-01-01

    Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 µm....

  18. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

    1996-01-01

    Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

  19. Ion bombardment and disorder in amorphous silicon

    International Nuclear Information System (INIS)

    Sidhu, L.S.; Gaspari, F.; Zukotynski, S.

    1997-01-01

    The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects

  20. Fe based amorphous and compounds metallic alloys for magnetic and structural use

    International Nuclear Information System (INIS)

    Lavorato, G; Bassi, F; De Rosa, H; Moya, J

    2008-01-01

    Massive amorphous metals (thicker than 1mm) are new types of material that could have a wide range of future applications due to a unique combination of their physical properties, mechanics and magnetics. Among these are the elevated tension of fracture and hardness, and excellent soft magnetic properties. Since 1960, when an amorphous metallic alloy was first discovered, progress has continued on the application possibilities for these materials. One of their main limitations, maximum obtainable thickness, has continued to increase, since at first thicknesses of a few microns were obtained. Now amorphous alloys more than 70 mm thick are obtained using different metallic elements. Since 1995 massive amorphous metals can be produced using Fe as the base element. At first they were made in order to achieve good soft magnetic properties (thicknesses of ∼5 mm) and later a renewed interest in their use as structural material led to the development of materials with thicknesses of 16 mm and paramagnetics at room temperature. Increasing the toughness of these materials is also a challenge and investigators have proposed several solutions, among them is the development of composite materials where dendrites from a solid solution act as crack stoppers of fissures that are spread by an amorphous matrix. This work presents the results of studies with two types of synthesized materials using the rapid cooling technique from injection copper mold casting at air temperature: 1) a massive amorphous metallic alloy with composition (Fe 0.375 Co 0 .375 B 0.2 Si 0.05 )96Nb 4 (at.%) and 2) a composite of solid solution dendrites α-(FeCo) scattered in an amorphous matrix with a composition similar to alloy 1. Using the samples obtained structural studies were made (optic and electronic microscopy SEM, XRD, EDAX, DTA), magnetic studies (coercive field and saturation magnetization) and mechanical studies (Vickers microhardness). The fully amorphous alloy could be obtained with a

  1. Kinetics and formation mechanism of amorphous Fe52Nb48 alloy powder fabricated by mechanical alloying

    International Nuclear Information System (INIS)

    El-Eskandarany, S.

    1999-01-01

    A single phase amorphous Fe 52 Nb 48 alloy has been synthesized through a solid state interdiffusion of pure polycrystalline Fe and Nb powders at room temperature, using a high-energy ball-milling technique. The mechanisms of metallic glass formation and competing crystallization processes in the mechanically deformed composite powders have been investigated by means of X-ray diffraction, Moessbauer spectroscopy, differential thermal analysis, scanning electron microscopy and transmission electron microscopy. The numerous intimate layered composite particles of the diffusion couples that formed during the first and intermediate stages of milling time (0-56 ks), are intermixed to form amorphous phase(s) upon heating to about 625 K by so-called thermally assisted solid state amorphization, TASSA. The amorphization heat of formation for binary system via the TASSA, ΔH a , was measured directly as a function of the milling time. Comparable with the TASSA, homogeneous amorphous alloys were fabricated directly without heating the composite multilayered particles upon milling these particles for longer milling time (86 ks-144 ks). The amorphization reaction here is attributed to the mechanical driven solid state amorphization. This single amorphous phase transforms into an order phase (μ phase) upon heating at 1088 K (crystallization temperature, T x ) with enthalpy change of crystallization, ΔH x , of -8.3 kJmol -1 . (orig.)

  2. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    Science.gov (United States)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  3. Correlation Between Superheated Liquid Fragility And Onset Temperature Of Crystallization For Al-Based Amorphous Alloys

    Directory of Open Access Journals (Sweden)

    Guo J.

    2015-06-01

    Full Text Available Amorphous alloys or metallic glasses have attracted significant interest in the materials science and engineering communities due to their unique physical, mechanical, and chemical properties. The viscous flow of amorphous alloys exhibiting high strain rate sensitivity and homogeneous deformation is considered to be an important characteristic in thermoplastic forming processes performed within the supercooled liquid region because it allows superplastic-like deformation behavior. Here, the correlation between the superheated liquid fragility, and the onset temperature of crystallization for Al-based alloys, is investigated. The activation energy for viscous flow of the liquid is also investigated. There is a negative correlation between the parameter of superheated liquid fragility and the onset temperature of crystallization in the same Al-based alloy system. The activation energy decreases as the onset temperature of crystallization increases. This indicates that the stability of a superheated liquid can affect the thermal stability of the amorphous alloy. It also means that a liquid with a large superheated liquid fragility, when rapidly solidified, forms an amorphous alloy with a low thermal stability.

  4. Influence of silicon on void nucleation in irradiated alloys

    International Nuclear Information System (INIS)

    Esmailzadeh, B.; Kumar, A.; Garner, F.A.

    1984-01-01

    The addition of silicon to pure nickel, Ni-Cr alloys and Fe-Ni-Cr alloys raises the diffusivity of each of the alloy components. The resultant increase in the effective vacancy diffusion coefficient causes large reductions in the nucleation rate of voids during irradiation. This extends the transient regime of swelling, which is controlled not only by the amount of silicon in solution but also by the precipitation kinetics of precipitates rich in nickel and silicon

  5. Microcapillary Features in Silicon Alloyed High-Strength Cast Iron

    Directory of Open Access Journals (Sweden)

    R.K. Hasanli

    2017-04-01

    Full Text Available Present study explores features of silicon micro capillary in alloyed high-strength cast iron with nodular graphite (ductile iron produced in metal molds. It identified the nature and mechanism of micro liquation of silicon in a ductile iron alloyed with Nickel and copper, and demonstrated significant change of structural-quality characteristics. It was concluded that the matrix of alloyed ductile iron has a heterogeneous structure with cross reinforcement and high-silicon excrement areas.

  6. Preparation and Properties of Mg-Cu-Y-Al bulk Amorphous Alloys

    DEFF Research Database (Denmark)

    Pryds, Nini; Eldrup, Morten Mostgaard; Ohnuma, M.

    2000-01-01

    Bulk amorphous (Mg(1-gamma)Al(gamma))(60)CU(30)Y(10) alloys were prepared using a relatively simple technique of rapid cooling of the melt in a copper wedge mould. The temperature vs, time was recorded during the cooling and solidification process of the melt and compared with a spacial and tempo......Bulk amorphous (Mg(1-gamma)Al(gamma))(60)CU(30)Y(10) alloys were prepared using a relatively simple technique of rapid cooling of the melt in a copper wedge mould. The temperature vs, time was recorded during the cooling and solidification process of the melt and compared with a spacial...... temperatures in specimens containing a few percent Al. The alloy with no Al crystallises apparently without the formation of nanoparticles. The critical cooling rate for the formation of an amorphous Mg(60)CU(30)Y(10) specimen was determined experimentally by a combination of DSC data and temperature vs, time...

  7. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

    1991-07-01

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  8. Preparing rare earth-silicon-iron-aluminum alloys

    International Nuclear Information System (INIS)

    Marchant, J.D.; Morrice, E.; Herve, B.P.; Wong, M.M.

    1980-01-01

    As part of its mission to assure the maximum recovery and use of the Nation's mineral resources, the Bureau of Mines, investigated an improved procedure for producing rare earth-silicon alloys. For example, a charge consisting of 681 grams of mixed rare-earth oxides, 309 grams of ferrosilicon (75 wt-pct Si), and 182 grams of aluminum metal along with a flux consisting of 681 grams of CaO and 45 grams of MgO was reacted at 1500 0 C in an induction furnace. Good slag-metal separation was achieved. The alloy product contained, in weight-percent, 53 RE, 28 Si, 11 Fe, and 4 Al with a rare earth recovery of 80 pct. In current industrial practice rare earth recoveries are usually about 60 pct in alloy products that contain approximately 30 wt-pct each of rare earths and silicon. Metallurgical evaluations showed the alloys prepared in this investigation to be as effective in controlling the detrimental effect of sulfur in steel and cast iron as the commercial rare earth-silicon-iron alloys presently used in the steel industry

  9. Spectroscopic and mechanical studies on the Fe-based amorphous alloy 2605SA1

    International Nuclear Information System (INIS)

    Cabral P, A.; Garcia S, I.; Contreras V, J. A.; Garcia S, F.; Nava, N.

    2010-01-01

    The Vickers micro-hardness of this alloy was unusually dependent on the heat treatment from 300 to 634 K, inferring important micro-structural changes and the presence of amorphous grains before its phase transition. Once the alloy is crystallized, the micro-hardness is characteristic of a brittle alloy, the main problem of these alloys. Within the amorphous state, other properties like free-volume, magnetic states and Fe-Fe distances were followed by Positron annihilation lifetime spectroscopy and Moessbauer spectroscopy, respectively, to analyze those micro-structural changes, thermally induced, which are of paramount interest to understand their brittleness problem. (Author)

  10. Spectroscopic and mechanical studies on the Fe-based amorphous alloy 2605SA1

    Energy Technology Data Exchange (ETDEWEB)

    Cabral P, A.; Garcia S, I. [ININ, Departamento de Quimica, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico); Contreras V, J. A.; Garcia S, F. [Universidad Autonoma del Estado de Mexico, Facultad de Ciencias, El Cerrillo Piedras Blancas, Toluca, Estado de Mexico (Mexico); Nava, N., E-mail: agustin.cabral@inin.gob.m [Instituto Mexicano del Petroleo, Eje Central Lazaro Cardenas No. 152, Col. San Bartolo Atepehuacan, 07730 Mexico D. F. (Mexico)

    2010-07-01

    The Vickers micro-hardness of this alloy was unusually dependent on the heat treatment from 300 to 634 K, inferring important micro-structural changes and the presence of amorphous grains before its phase transition. Once the alloy is crystallized, the micro-hardness is characteristic of a brittle alloy, the main problem of these alloys. Within the amorphous state, other properties like free-volume, magnetic states and Fe-Fe distances were followed by Positron annihilation lifetime spectroscopy and Moessbauer spectroscopy, respectively, to analyze those micro-structural changes, thermally induced, which are of paramount interest to understand their brittleness problem. (Author)

  11. Amorphous Alloy Membranes Prepared by Melt-Spin methods for Long-Term use in Hydrogen Separation Applications

    Energy Technology Data Exchange (ETDEWEB)

    Chandra, Dhanesh; Kim, Sang-Mun; Adibhatla, Anasuya; Dolan, Michael; Paglieri, Steve; Flanagan, Ted; Chien, Wen-Ming; Talekar, Anjali; Wermer, Joseph

    2013-02-28

    Amorphous Ni-based alloy membranes show great promise as inexpensive, hydrogenselective membrane materials. In this study, we developed membranes based on nonprecious Ni-Nb-Zr alloys by adjusting the alloying content and using additives. Several studies on crystallization of the amorphous ribbons, in-situ x-ray diffraction, SEM and TEM, hydrogen permeation, hydrogen solubility, hydrogen deuterium exchange, and electrochemical studies were conducted. An important part of the study was to completely eliminate Palladium coatings of the NiNbZr alloys by hydrogen heattreatment. The amorphous alloy (Ni0.6Nb0.4)80Zr20 membrane appears to be the best with high hydrogen permeability and good thermal stability.

  12. Hydriding properties of amorphous Ni-B alloy studied by DSC and thermogravimetry

    International Nuclear Information System (INIS)

    Spassov, T.; Rangelova, V.

    1999-01-01

    The hydrogenation behaviour of melt-spun Ni 81.5 B 18.5 amorphous alloy was studied by means of differential scanning calorimetry (DSC) and thermogravimetry (TG) and compared with the hydriding properties of a Fe-B-Si glass. It was found that the amorphous Ni-B alloy absorbs larger amounts of hydrogen than the Fe-B-Si glass, as the initial kinetics of hydrogen absorption and desorption of both the alloys are comparable. Hydrogen absorption and desorption reactions in Ni-B were observed to proceed with similar rates at ca. 300 K. The hydrogen desorption is revealed in DSC as an endothermic peak in the 350-450 K range, preceding the crystallization peak of the amorphous alloy. The enthalpy of hydrogen desorption (ΔH des =22 kJ/mol H 2 ) for Ni-B was found to be smaller than that for the Fe-B-Si glass, which finding is in contrast to the results on hydrogen diffusion in crystalline αFe and Fe-based alloys and Ni and Ni-based alloys. The hydrogen desorption temperature and enthalpy for Ni 81.5 B 18.5 were found to be independent of the amount of hydrogen absorbed. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

  13. Amorphous silicon-based microchannel plates

    International Nuclear Information System (INIS)

    Franco, Andrea; Riesen, Yannick; Wyrsch, Nicolas; Dunand, Sylvain; Powolny, François; Jarron, Pierre; Ballif, Christophe

    2012-01-01

    Microchannel plates (MCP) based on hydrogenated amorphous silicon (a-Si:H) were recently introduced to overcome some of the limitations of crystalline silicon and glass MCP. The typical thickness of a-Si:H based MCPs (AMCP) ranges between 80 and 100 μm and the micromachining of the channels is realized by deep reactive ion etching (DRIE). Advantages and issues regarding the fabrication process are presented and discussed. Electron amplification is demonstrated and analyzed using Electron Beam Induced Current (EBIC) technique. The gain increases as a function of the bias voltage, limited to −340 V on account of high leakage currents across the structure. EBIC maps on 10° tilted samples confirm that the device active area extend to the entire channel opening. AMCP characterization with the electron beam shows gain saturation and signal quenching which depends on the effectiveness of the charge replenishment in the channel walls.

  14. Crystallization of the amorphous Fe80Zr12B8 alloy under controlled heating

    International Nuclear Information System (INIS)

    Huang, H.; Shao, G.; Tsakiropoulos, P.

    2008-01-01

    The devitrification process of amorphous Fe 80 Zr 12 B 8 alloy ribbons were studied under controlled thermal conditions. The major crystallization event during continuous heating with differential scanning calorimetory (DSC) is dictated by diffusion controlled growth and the associated atom mobility of the slow diffusing species Zr. The existence of prior nano-crystals formed by pre-annealing below the crystallization temperature had little effect on the major crystallization temperature. The crystallization sequence during heating was: amorphousamorphous + α-Fe + Fe 3 Zr(B) → amorphous + α-Fe + Fe 3 Zr(B) + Fe 2 Zr. Different from previous findings in alloys of lower Zr and B contents, the peak for the crystallization of the α-Fe phase alone is missing in the DSC traces of this alloy

  15. Superconductivity, spin-glass properties, and ferromagnetism in amorphous La--Gd--Au alloys

    International Nuclear Information System (INIS)

    Poon, S.J.

    1978-01-01

    The superconducting and magnetic properties of splat cooled amorphous alloys of composition (La/sub 100-x/Gd/sub x/) 80 Au 20 (0 equal to or less than x equal to or less than 100) have been studied. The La 80 Au 20 alloys are ideal type II superconductors (critical temperature T/sub c/ = 3.5 0 K). The concentration range (x 80 Au 20 . The results are compared with recent theories on amorphous magnetism

  16. Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2008-08-15

    The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

  17. An In-depth Study on Semitransparent amorphous Silicon Sensors

    International Nuclear Information System (INIS)

    Fernandez, M. G.; Ferrando, A.; Josa, M. I.; Molinero, A.; Oller, J. C.; Arce, P.; Calvo, E.; Figueroa, C. F.; Garcia, N.; Rodrigo, T.; Vila, I.; Virto, A. L.

    1999-01-01

    Semitransparent amorphous silicon sensors have been proposed as the 2D positioning sensors for the link system of the CMS alignment: An in-depth study of the actual performance of these sensors is here reported. (Author) 8 refs

  18. Electrodeposition at room temperature of amorphous silicon and germanium nanowires in ionic liquid

    Energy Technology Data Exchange (ETDEWEB)

    Martineau, F; Namur, K; Mallet, J; Delavoie, F; Troyon, M; Molinari, M [Laboratoire de Microscopies et d' Etude de Nanostructures (LMEN EA3799), Universite de Reims Champagne Ardennes (URCA), Reims Cedex 2 (France); Endres, F, E-mail: michael.molinari@univ-reims.fr [Institute of Particle Technology, Chair of Interface Processes, Clausthal University of Technology, D-36678 Clausthal-Zellerfeld (Germany)

    2009-11-15

    The electrodeposition at room temperature of silicon and germanium nanowires from the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P{sub 1,4}) containing SiCl{sub 4} as Si source or GeCl{sub 4} as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germanium nanowires of different diameters. The nanowires are composed of pure amorphous silicon or germanium. The nanowires have homogeneous cylindrical shape with a roughness of a few nanometres on the wire surfaces. The nanowires' diameters and lengths well match with the initial membrane characteristics. Preliminary photoluminescence experiments exhibit strong emission in the near infrared for the amorphous silicon nanowires.

  19. Partial amorphization of an α-FeCr alloy by ball-milling

    International Nuclear Information System (INIS)

    Loureiro, J. M.; Costa, B. F. O.; Caer, G. Le; Delcroix, P.

    2008-01-01

    The structural changes of near-equiatomic α-FeCr alloys, ground in a vibratory mill in vacuum and in argon, were followed as a function of milling time. An amorphous phase forms in both cases but at a much faster rate when milling in argon than when milling in vacuum. Amorphisation by ball-milling of α-FeCr alloys is deduced to be an intrinsic phenomenon which is however speeded-up by oxygen. The amorphous phase crystallizes into a bcc Cr-rich phase and a bcc Fe-rich phase when annealed for short times.

  20. Ion-beam doping of amorphous silicon with germanium isovalent impurity

    International Nuclear Information System (INIS)

    Khokhlov, A.F.; Mashin, A.I.; Ershov, A.V.; Mashin, N.I.; Ignat'eva, E.A.

    1988-01-01

    Experimental data on ion-beam doping of amorphous silicon containing minor germanium additions by donor and acceptor impurity are presented. Doping of a-Si:Ge films as well as of a-Si layers was performed by implantation of 40 keV energy B + ions or 120 keV energy phosphorus by doses from 3.2x10 13 up to 1.3x10 17 cm -2 . Ion current density did not exceed 1 μA/cm 2 . Radiation defect annealing was performed at 400 deg C temperature during 30 min. Temperature dependences of conductivity in the region of 160-500 K were studied. It is shown that a-Si:Ge is like hydrogenized amorphous silicon in relation to doping

  1. Glow discharge-deposited amorphous silicon films for low-cost solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Grabmaier, J G; Plaettner, R D; Stetter, W [Siemens A.G., Muenchen (Germany, F.R.). Forschungslaboratorien

    1980-01-01

    Due to their high absorption constant, glow discharge-deposited amorphous silicon (a-Si) films are of great interest for low-cost solar cells. Using SiH/sub 4/ and SiX/sub 4//H/sub 2/ (X = Cl or F) gas mixtures in an inductively or capacitively excited reactor, a-Si films with thicknesses up to several micrometers were deposited on substrates of glass, silica and silicon. The optical and electrical properties of the films were determined by measuring the IR absorption spectra, dark conductivity, photoconductivity, and photoluminescence. Hydrogen, chlorine, or fluorine were incorporated in the films in order to passivate dangling bonds in the amorphous network.

  2. Characterization of amorphous silicon films by Rutherford backscattering spectrometry. [1. 5-MeV Ho/sup +/

    Energy Technology Data Exchange (ETDEWEB)

    Kubota, K; Imura, T; Iwami, M; Hiraki, A [Osaka Univ., Suita (Japan). Dept. of Electrical Engineering; Satou, M [Government Industrial Research Inst., Osaka, Ikeda (Japan); Fujimoto, F [Tokyo Univ. (Japan). Coll. of General Education; Hamakawa, Y [Osaka Univ., Toyonaka (Japan). Faculty of Engineering Science; Minomura, S [Tokyo Univ. (Japan). Inst. for Solid State Physics; Tanaka, K [Electrotechnical Lab., Tanashi, Tokyo (Japan)

    1980-01-01

    Rutherford backscattering spectrometry (RBS) was applied to the characterization of amorphous silicon films prepared by glow discharge in silane, tetrode- and diode-sputterings of silicon target in ambient argon or hydrogen diluted by argon. This method was able to detect at least 5 at.% hydrogen atoms in amorphous silicon through the change of stopping power. Hydrogen content in films made by glow discharge at the substrate temperature 25/sup 0/C to 300/sup 0/C and at 2 torr of silane gas varied from 50% to 20%. A strong trend was found for oxygen to dissolve into films: Films produced by diode sputtering in argon gas with higher pressure than 3 x 10/sup -2/ torr absorbed oxygen. The potential and fitness of the RBS method for the characterization of amorphous silicon films are emphasized and demonstrated.

  3. Preparation and characterization of polymer-derived amorphous silicon carbide with silicon-rich stoichiometry

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Iwasaka, Akira [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Takagishi, Hideyuki [Faculty of Symbiotic System Science, Fukushima University, 1 Kanayagawa, Fukushima-shi, Fukushima 960-1296 (Japan); Shimoda, Tatsuya [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

    2016-08-01

    Polydihydrosilane with pendant hexyl groups was synthesized to obtain silicon-rich amorphous silicon carbide (a-SiC) films via the solution route. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage. Therefore, the polymer provides sufficient purity for the fabrication of semiconducting a-SiC. Here, we investigated the correlation of Si/C stoichiometry between the polymer and the resultant a-SiC film. The structural, optical, and electrical properties of the films with various carbon contents were also explored. Experimental results suggested that the excess carbon that did not participate in Si−C configurations was decomposed and was evaporated during polymer-to-SiC conversion. Consequently, the upper limit of the carbon in resultant a-SiC film was < 50 at.%; namely, the polymer provided silicon-rich a-SiC, whereas the conventionally used polycarbosilane inevitably provides carbon-rich one. These features of this unusual polymer open up a frontier of polymer-derived SiC and solution-processed SiC electronics. - Highlights: • Polymeric precursor solution for silicon carbide (SiC) is synthesized. • Semiconducting amorphous SiC is prepared via solution route. • The excess carbon is decomposed during cross-linking resulting in Si-rich SiC films. • The grown SiC films contain substantial amount of hydrogen atoms as SiH{sub n}/CH{sub n} entities. • Presence of CH{sub n} entities induces dangling bonds, causing poor electrical properties.

  4. Resistivity changes of some amorphous alloys undergoing nanocrystallization

    Science.gov (United States)

    Barandiarán, J. M.; Fernández Barquín, L.; Sal, J. C. Gómez; Gorría, P.; Hernando, A.

    1993-10-01

    The electrical resistivity of amorphous alloys with compositions: Fe 73.5Nb 3Cu 1Si 13.5B 9, Fe 86Zr 7Cu 1B 6 and Co 80Nb 8B 12 has been studied in the temperature range from 300 to 1100 K, where crystallization occurs. The products of crystallization and the grain size have been studied by X-ray diffraction. In a first step, all the alloys crystallize with small grains of a few nanometers in diameter (nanocrystalline state), and the resistivity behavior at this process accounts for the difference between the amorphous and nanocrystalline phases. The nanocrystalline phases are: α-Fe-Si, α-Fe and fcc Co for the three compounds studied respectively. A second process, at which grain growth and precipitation of intermetallic compounds and borides takes place, has been found for all the alloys. The resistivity is sensitive, not only to the total transformed sample amount, but to the topological distribution of the crystalline phases, and therefore shows a more complex behavior than other well established techniques, as differential scanning calorimetry. This supplementary information given by the resistivity is also discussed.

  5. Positron lifetime measurements on electron irradiated amorphous alloys

    International Nuclear Information System (INIS)

    Moser, P.; Hautojaervi, P.; Chamberod, A.; Yli-Kauppila, J.; Van Zurk, R.

    1981-08-01

    Great advance in understanding the nature of point defects in crystalline metals has been achieved by employing positron annihilation technique. Positrons detect vacancy-type defects and the lifetime value of trapped positrons gives information on the size of submicroscopic vacancy aglomerates and microvoids. In this paper it is shown that low-temperature electron irradiations can result in a considerable increase in the positron lifetimes in various amorphous alloys because of the formation of vacancy-like defects which, in addition of the pre-existing holes, are able to trap positrons. Studied amorphous alloys were Fe 80 B 20 , Pd 80 Si 20 , Cu 50 Ti 50 , and Fe 40 Ni 40 P 14 B 6 . Electron irradiations were performed with 3 MeV electrons at 20 K to doses around 10 19 e - /cm 2 . After annealing positron lifetime spectra were measured at 77 K

  6. Characterisation of amorphous silicon alloys by RBS/ERD with self consistent data analysis using simulated annealing

    International Nuclear Information System (INIS)

    Barradas, N.P.; Wendler, E.; Jeynes, C.; Summers, S.; Reehal, H.S.; Summers, S.

    1999-01-01

    Full text: Hydrogenated amorphous silicon films are deposited by CVD onto insulating (silica) substrates for the fabrication of solar cells. 1.5MeV 4 He ERD/RBS is applied to the films, and a self consistent depth profile of Si and H using the simulated annealing (SA) algorithm was obtained for each sample. The analytical procedure is described in detail, and the confidence limits of the profiles are obtained using the Markov Chain Monte Carlo method which is a natural extension of the SA algorithm. We show how the results are of great benefit to the growers

  7. Amorphization and crystallization of Zr{sub 66.7-x}Cu{sub 33.3}Nb{sub x} (x = 0, 2, 4) alloys during mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yan [Key Laboratory of Liquid Structure and Heredity of Materials, Shandong University, 73 Jingshi Road, Jinan 250061 (China); School of Materials Science and Engineering, University of Jinan, 106 Jiwei Road, Jinan 250022 (China); Chen Xiuxiu [School of Materials Science and Engineering, University of Jinan, 106 Jiwei Road, Jinan 250022 (China); Geng Haoran [School of Materials Science and Engineering, University of Jinan, 106 Jiwei Road, Jinan 250022 (China)], E-mail: mse_wangy@ujn.edu.cn; Yang Zhongxi [Key Laboratory of Liquid Structure and Heredity of Materials, Shandong University, 73 Jingshi Road, Jinan 250061 (China); School of Materials Science and Engineering, University of Jinan, 106 Jiwei Road, Jinan 250022 (China)

    2009-04-17

    In the present paper, the effect of Nb and different rotation speeds on the amorphization and crystallization of Zr{sub 66.7-x}Cu{sub 33.3}Nb{sub x} (x = 0, 2, 4) alloys during mechanical alloying has been investigated using X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and differential scanning calorimetry (DSC). The results show that the minor addition of Nb can shorten the start time of the amorphization reaction, improve the glass forming ability of Zr-Cu alloys, but cannot promote the formation of a single amorphous phase at a lower rotation speed of 200 rpm. The glass forming ability of the Zr{sub 66.7-x}Cu{sub 33.3}Nb{sub x} (x = 0, 2, 4) alloys increases with increasing Nb additions. At a higher rotation speed of 350 rpm, a single amorphous phase of Zr{sub 66.7-x}Cu{sub 33.3}Nb{sub x} (x = 0, 2, 4) can be successfully fabricated. Moreover, the Nb addition into Zr-Cu alloys can accelerate the amorphization process and improve the stability of the amorphous phase against the mechanically induced crystallization. Furthermore, the amorphous Zr{sub 66.7}Cu{sub 33.3} phase gradually transforms into a metastable fcc-Zr{sub 2}Cu phase with increasing milling time.

  8. Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

    Science.gov (United States)

    Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

    2008-11-01

    Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

  9. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    International Nuclear Information System (INIS)

    Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

    2009-01-01

    The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode (CPM) is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10 18 cm -3 . Beyond this defect level, a sublinear relation is found i.e., not

  10. Corrosion-resistant amorphous metallic films of Mo49Cr33B18 alloy

    Science.gov (United States)

    Ramesham, R.; Distefano, S.; Fitzgerald, D.; Thakoor, A. P.; Khanna, S. K.

    1987-01-01

    Corrosion-resistant amorphous metallic alloy films of Mo49Cr33B18 with a crystallization temperature of 590 C were deposited onto glass and quartz substrates by magnetron sputter-quench technique. The amorphous nature of the films was confirmed by their diffuse X-ray diffraction patterns. The deposited films are densely packed (zone T) and exhibit low stress and good adhesion to the substrate. Corrosion current of as-deposited coating of MoCrB amorphous metallic alloy is approximately three orders of magnitude less than the corrosion current of 304 stainless steel in 1N H2SO4 solution.

  11. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

    Directory of Open Access Journals (Sweden)

    Jia Ge

    2014-01-01

    Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

  12. Influence of structural relaxation and partial devitrification on the corrosion resistance of Fe78B13Si9 amorphous alloy

    International Nuclear Information System (INIS)

    Souza, C.A.C.; Politi, F.S.; Kiminami, C.S.

    1998-01-01

    Amorphous alloys obtained by rapid solidification from the melt exhibit a similar structure to those observed in the liquid state, i.e., without long range ordering, in such a way that the constituents of the alloy usually are randomly and homogeneously distributed. Amorphous alloys, depending on their composition, may exhibit interesting characteristics such as very soft magnetic properties and improved resistance to corrosion. The high corrosion resistance of these alloys is attributed mainly to a higher rate of dissolution of passivating elements in the amorphous state. In addition, amorphous alloys are chemically homogeneous and free of defects such as grain boundaries, precipitates and segregation, which are favorable sites for corrosion. The corrosion resistance of amorphous alloys also depends on their thermal history. Several authors have reported that structural changes, such as structural relaxation and devitrification caused by annealing, change significantly the corrosion properties of these alloys. The purpose of this paper is to study corrosion resistance of the amorphous FeBSi alloy and the effects of structural changes such as structural relaxation and partial crystallization caused by annealing

  13. The atomic and electronic structure of amorphous silicon nitride

    International Nuclear Information System (INIS)

    Alvarez, F.; Valladares, A.A.

    2002-01-01

    Using a novel approach to the ab initio generation of random networks we constructed two nearly stoichiometric samples of amorphous silicon nitride with the same content x= 1.29. The two 64-atom periodically-continued cubic diamond-like cells contain 28 silicons and 36 nitrogens randomly substituted, and were amorphized with a 6 f s time step by heating them to just below their melting temperature with a Harris-functional based, molecular dynamics code in the LDA approximation. The averaged total radial distribution function (RDF) obtained is compared with some existing Tersoff-like potential simulations and with experiment; ours agree with experiment. All the partial radial features are calculated and the composition of the second peak also agrees with experiment. The electronic structure is calculated and the optical gaps obtained using both a HOMO-LUMO approach and the Tauc-like procedure developed recently that gives reasonable gaps. (Author)

  14. Impurity-defect complexes in hydrogenated amorphous silicon

    International Nuclear Information System (INIS)

    Yang, L.H.; Fong, C.Y.; Nichols, C.S.

    1991-01-01

    The two most outstanding features observed for dopants in hydrogenated amorphous silicon (a-Si:H)-a shift in the Fermi level accompanied by an increase in the defect density and an absence of degenerate doping have previously been postulated to stem from the formation of substitutional dopant-dangling bond complexes. Using first-principles self-consistent pseudopotential calculations in conjunction with a supercell model for the amorphous network and the ability of network relaxation from the first-principles results. The authors have studied the electronic and structural properties of substitutional fourfold-coordinated phosphorus and boron at the second neighbor position to a dangling bond defect. This paper demonstrates that such impurity-defect complexes can account for the general features observed experimentally in doped a-Si:H

  15. Amorphous bimetallic alloys prepared by steam condensation

    International Nuclear Information System (INIS)

    Drago, V.

    1988-01-01

    Amorphous alloys of MnSn are prepared by steam condensation, in a substratum with a temperature near of the liquid helium. The magnetic and paramagnetic hyperfine spectrum and the ordination temperature by Moessbauer effect 119Sn are measured. A diagram of magnetic phase is proposed, basing on the measures of Moessbauer effect. (C.G.C.) [pt

  16. Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

    Science.gov (United States)

    Wienkes, Lee Raymond

    Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

  17. Surface crystallization and magnetic properties of amorphous Fe80B20 alloy

    International Nuclear Information System (INIS)

    Vavassori, P.; Ronconi, F.; Puppin, E.

    1997-01-01

    We have studied the effects of surface crystallization on the magnetic properties of Fe 80 B 20 amorphous alloys. The surface magnetic properties have been studied with magneto-optic Kerr measurements, while those of bulk with a vibrating sample magnetometer. This study reveals that surface crystallization is similar to the bulk process but occurs at a lower temperature. At variance with previous results on other iron-based amorphous alloys the surface crystalline layer does not induce bulk magnetic hardening. Furthermore, both the remanence to saturation ratio and the bulk magnetic anisotropy do not show appreciable variations after the formation of the surface crystalline layer. The Curie temperature of the surface layer is lower with respect to the bulk of the sample. These effects can be explained by a lower boron concentration in the surface region of the as-cast amorphous alloy. Measurements of the chemical composition confirm a reduction of boron concentration in the surface region. copyright 1997 American Institute of Physics

  18. Formation and structure of V-Zr amorphous alloy thin films

    KAUST Repository

    King, Daniel J M

    2015-01-01

    Although the equilibrium phase diagram predicts that alloys in the central part of the V-Zr system should consist of V2Zr Laves phase with partial segregation of one element, it is known that under non-equilibrium conditions these materials can form amorphous structures. Here we examine the structures and stabilities of thin film V-Zr alloys deposited at room temperature by magnetron sputtering. The films were characterized by X-ray diffraction, transmission electron microscopy and computational methods. Atomic-scale modelling was used to investigate the enthalpies of formation of the various competing structures. The calculations confirmed that an amorphous solid solution would be significantly more stable than a random body-centred solid solution of the elements, in agreement with the experimental results. In addition, the modelling effort provided insight into the probable atomic configurations of the amorphous structures allowing predictions of the average distance to the first and second nearest neighbours in the system.

  19. Research on Zr50Al15-xNi10Cu25Yx amorphous alloys prepared by mechanical alloying with commercial pure element powders

    International Nuclear Information System (INIS)

    Long Woyun; Ouyang Xueqiong; Luo Zhiwei; Li Jing; Lu Anxian

    2011-01-01

    Amorphous Zr 50 Al 15-x Ni 10 Cu 25 Y x alloy powders were fabricated by mechanical alloying at low vacuum with commercial pure element powders. The effects on glass forming ability of Al partial substituted by Y in Zr 50 Al 15 Ni 10 Cu 25 and thermal stability of Si 3 N 4 powders addition were investigated. The as-milled powders were characterized by X-ray diffraction, scanning electron microscopy and differential scanning calorimeter. The results show that partial substitution of Al can improve the glass forming ability of Zr 50 Al 15 Ni 10 Cu 25 alloy. Minor Si 3 N 4 additions raise the crystallization activation energy of the amorphous phase and thus improve its thermal stability. -- Research Highlights: → ZrAlNiCu amorphous alloys can be synthesized by MA in low cost. → Appropriate amount of Al substituted by Y in ZrAlNiCu alloy can improve its glass forming ability. → A second phase particle addition helps to improve the thermal stability of the amorphous matrix.

  20. Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

    Science.gov (United States)

    Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

    2018-01-01

    Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

  1. Amorphous silicon films doped with BF3 and PF5

    International Nuclear Information System (INIS)

    Ortiz, A.; Muhl, S.; Sanchez, A.; Monroy, R.; Pickin, W.

    1984-01-01

    By using gaseous discharge process, thin films of hydrogenated amorphous silicon (a-Si:H) were produced. This process consists of Silane (SiH 4 ) decomposition at low pressure, in a chamber. (A.C.A.S.) [pt

  2. Microstructure and surface chemistry of amorphous alloys important to their friction and wear behavior

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.

    1986-01-01

    An investigation was conducted to examine the microstructure and surface chemistry of amorphous alloys, and their effects on tribological behavior. The results indicate that the surface oxide layers present on amorphous alloys are effective in providing low friction and a protective film against wear in air. Clustering and crystallization in amorphous alloys can be enhanced as a result of plastic flow during the sliding process at a low sliding velocity, at room temperature. Clusters or crystallines with sizes to 150 nm and a diffused honeycomb-shaped structure are produced on sizes to 150 nm and a diffused honeycomb-shaped structure are produced on the wear surface. Temperature effects lead to drastic changes in surface chemistry and friction behavior of the alloys at temperatures to 750 C. Contaminants can come from the bulk of the alloys to the surface upon heating and impart to the surface oxides at 350 C and boron nitride above 500 C. The oxides increase friction while the boron nitride reduces friction drastically in vacuum.

  3. Crystal field symmetry and magnetic interactions in rare earth-silver amorphous alloys

    International Nuclear Information System (INIS)

    Pappa, Catherine.

    1979-01-01

    A study has been made of the following rare earth based amorphous alloys: Ndsub(x)Agsub(100-x), Prsub(x)Agsub(100-x), Gdsub(x)Agsub(100-x), Tlsub(x)Agsub(100-x). In rare earth based amorphous alloys, the symmetrical distribution of the crystal field is very wide and hence not very sensitive to the content of the alloys. The existence of preponderant negative magnetic interactions leads to an upset magnetic order, the magnetization of a small volume not being nil. The magnetic behaviour of alloys with a small concentration of rare earths is governed by the existence of clusters of statistical origin, within which a rare earth ion has at least one other rare earth ion in the position of first neighbour. The presence of a high anisotropy at low temperatures make the magnetic interactions between clusters inoperative [fr

  4. Heterogeneous nucleation of amorphous alloys on catalytic nanoparticles to produce 2D patterned nanocrystal arrays

    International Nuclear Information System (INIS)

    Gangopadhyay, A K; Krishna, H; Favazza, C; Miller, C; Kalyanaraman, R

    2007-01-01

    Templates are widely used to produce artificial nanostructures. Here, laser-assisted self-organization has been used to form one- and two-dimensional (D) nanoarrays of Cu nanocrystals. Using these nanoarrays as a template, a 2D patterned ferromagnetic nanostructure of FeCrSi nanocrystals has been produced by heterogeneous nucleation and growth of nanocrystals by partial devitrification from an amorphous Fe 64.5 Cr 10 Si 13.5 B 9 Nb 3 alloy with the Cu nanoparticles acting as catalytic nucleation sites. The interaction among the ferromagnetic nanocrystals via the residual amorphous matrix can be controlled by suitable choice of the amorphous alloy composition. Although demonstrated for a ferromagnetic system, the processing method may have much wider applicability for producing artificial nanostructures of a wide variety of materials when materials-specific catalysts and amorphous alloy compositions are judiciously chosen

  5. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Directory of Open Access Journals (Sweden)

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  6. Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon

    Directory of Open Access Journals (Sweden)

    V. B. Neimash

    2018-01-01

    Full Text Available This work describes tin-induced crystallization of amorphous silicon studied with Raman spectroscopy in thin-film structures Si-Sn-Si irradiated with pulsed laser light. We have found and analyzed dependencies of the nanocrystals’ size and concentration on the laser pulse intensity for 10 ns and 150 μm duration laser pulses at the wavelengths of 535 nm and 1070 nm. Efficient transformation of the amorphous silicon into a crystalline phase during the 10 ns time interval of the acting laser pulse in the 200 nm thickness films of the amorphous silicon was demonstrated. The results were analyzed theoretically by modeling the spatial and temporal distribution of temperature in the amorphous silicon sample within the laser spot location. Simulations confirmed importance of light absorption depth (irradiation wavelength in formation and evolution of the temperature profile that affects the crystallization processes in irradiated structures.

  7. A study of the diffusion mechanisms in amorphous metallic alloys: diffusion and diffusion under high pressure in an amorphous NiZr alloy

    International Nuclear Information System (INIS)

    Grandjean, A.

    1996-01-01

    The aim of this work is a better understanding of the diffusion mechanism in amorphous metallic alloys. Then interdiffusion and hafnium diffusion in amorphous NiZr alloy have been studied. Samples used are made by sputtering co-deposition under vacuum and are well relaxed before the diffusion measurements. The time evolution of resistivity during annealing due to the decay of a composition modulated film has been measured and from this change in resistivity interdiffusion coefficients have been determined. Dependence of Hf diffusion on temperature and pressure has been studied using (SIMS). In this two cases, the diffusion process obeys an Arrhenius law and gives an activation energy of 1.33 eV for interdiffusion, and 0.76 eV for Hf diffusion. An effect of pressure on Hf diffusion has been found leading to an activation volume of 8.5 angstrom 3 . Thanks to these results, two approaches of the diffusion mechanisms in these systems have been proposed. The first comes from a comparison with the diffusion mechanisms in crystalline metals, that is to say by point defects. The second is an hypothesis of collective motions in these non crystalline alloys. (author)

  8. The kinetics of solid phase epitaxy in As-doped buried amorphous silicon layers

    International Nuclear Information System (INIS)

    McCallum, J.C.

    1999-01-01

    Ion implantation is the principal method used to introduce dopants into silicon for fabrication of semiconductor devices. During ion implantation, damage accumulates in the crystalline silicon lattice and amorphisation may occur over the depth range of the ions if the implant dose is sufficiently high. As device dimensions shrink, the need to produce shallower and shallower highly-doped layers increases and the probability of amorphisation also increases. To achieve dopant-activation, the amorphous or damaged material must be returned to the crystalline state by thermal annealing. Amorphous silicon layers can be crystallised by the solid-state process of solid phase epitaxy (SPE) in which the amorphous layer transforms to crystalline silicon (c-Si) layer by layer using the underlying c-Si as a seed. The atomic mechanism that is responsible for the crystallisation is thought to involve highly-localised bond-breaking and rearrangement processes at the amorphous/crystalline (a/c) interface but the defect responsible for these bond rearrangements has not yet been identified. Since the bond breaking process necessarily generates dangling bonds, it has been suggested that the crystallisation process may solely involve the formation and migration of dangling bonds at the interface. One of the key factors which may shed further light on the nature of the SPE defect is the observed dopant-dependence of the rate of crystallisation. It has been found that moderate concentrations of dopants enhance the SPE crystallisation rate while the presence of equal concentrations of an n-type and a p-type dopant (impurity compensation) returns the SPE rate to the intrinsic value. This provides crucial evidence that the SPE mechanism is sensitive to the position of the Fermi level in the bandgap of the crystalline and/or the amorphous silicon phases and may lead to identification of an energy level within the bandgap that can be associated with the defect. This paper gives details of SPE

  9. New Approaches to the Computer Simulation of Amorphous Alloys: A Review.

    Science.gov (United States)

    Valladares, Ariel A; Díaz-Celaya, Juan A; Galván-Colín, Jonathan; Mejía-Mendoza, Luis M; Reyes-Retana, José A; Valladares, Renela M; Valladares, Alexander; Alvarez-Ramirez, Fernando; Qu, Dongdong; Shen, Jun

    2011-04-13

    In this work we review our new methods to computer generate amorphous atomic topologies of several binary alloys: SiH, SiN, CN; binary systems based on group IV elements like SiC; the GeSe 2 chalcogenide; aluminum-based systems: AlN and AlSi, and the CuZr amorphous alloy. We use an ab initio approach based on density functionals and computationally thermally-randomized periodically-continued cells with at least 108 atoms. The computational thermal process to generate the amorphous alloys is the undermelt-quench approach, or one of its variants, that consists in linearly heating the samples to just below their melting (or liquidus) temperatures, and then linearly cooling them afterwards. These processes are carried out from initial crystalline conditions using short and long time steps. We find that a step four-times the default time step is adequate for most of the simulations. Radial distribution functions (partial and total) are calculated and compared whenever possible with experimental results, and the agreement is very good. For some materials we report studies of the effect of the topological disorder on their electronic and vibrational densities of states and on their optical properties.

  10. Analysis of IV characteristics of solar cells made of hydrogenated amorphous, polymorphous and microcrystalline silicon

    International Nuclear Information System (INIS)

    Hamadeh, H.

    2009-03-01

    The IV characteristics of pin solar cells made of amorphous, polymorphous and microcrystalline silicon were investigated. The temperature dependence was measured in the temperature range between 150 K and 395 K. This range covers the most terrestrial applications condition. Using simplex procedure, the IV parameter of the cells were deduce using line fitting. It has been shown that polymorphous silicon shows electrical properties that are close to properties of microcrystalline silicon but as it is well known, polymorphous silicon shows higher absorption similar to amorphous silicon. The polymorphous silicon solar cells showed higher efficiencies, lower shunting and higher filling factors. In the above mentioned temperature range, polymorphous silicon is the better material for the manufacturing of thin film hydrogenated silicon pin solar cells. More investigations concerning the structural properties are necessary to make stronger conclusions in regards to the stability of the material, what we hope to do in the future. (author)

  11. Detection of charged particles in amorphous silicon layers

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Morel, J.; Kaplan, S.N.; Street, R.A.

    1986-02-01

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics

  12. New amorphous and nanocrystalline alloys based on the Ni-Si-B system

    Energy Technology Data Exchange (ETDEWEB)

    Battezzati, L.; Rizzi, P.; Romussi, S. [Turin Univ. (Italy). Dipt. di Chimica

    1998-08-01

    The glass formation and crystallization of a Ni{sub 36}Fe{sub 32}Ta{sub 7}Si{sub 8}B{sub 17} alloy is reported. In its equilibrium state it has a complex constitution made of at least four phases. It starts melting at 1227 K and displays a liquidus at 1460 K, but it shows a tendency to undercool even on cooling at 10 K/min in a HTDSC cell. Amorphous ribbons were produced by melt spinning. In DSC experiments the crystallization of the amorphous alloy occurs with a primary reaction giving a peak skewed on the high temperature side with onset at 836 K using an heating rate of 40 K/min. XRD analysis and TEM observations demonstrate that crystals with size below 10 nm and lattice parameter close to that of Ni are formed during this transformation. The mechanism of crystallization is very sensitive to changes in composition. In fact, nanocrystals are not found in alloys easily amorphized as the present one but containing a different ratio of metallic elements. (orig.) 16 refs.

  13. Heterogeneous nucleation of amorphous alloys on catalytic nanoparticles to produce 2D patterned nanocrystal arrays

    Energy Technology Data Exchange (ETDEWEB)

    Gangopadhyay, A K [Department of Physics, Washington University in St Louis, MO 63130 (United States); Krishna, H [Department of Physics, Washington University in St Louis, MO 63130 (United States); Favazza, C [Department of Physics, Washington University in St Louis, MO 63130 (United States); Miller, C [Center for Materials Innovation, Washington University in St Louis, MO 63130 (United States); Kalyanaraman, R [Department of Physics, Washington University in St Louis, MO 63130 (United States)

    2007-12-05

    Templates are widely used to produce artificial nanostructures. Here, laser-assisted self-organization has been used to form one- and two-dimensional (D) nanoarrays of Cu nanocrystals. Using these nanoarrays as a template, a 2D patterned ferromagnetic nanostructure of FeCrSi nanocrystals has been produced by heterogeneous nucleation and growth of nanocrystals by partial devitrification from an amorphous Fe{sub 64.5}Cr{sub 10}Si{sub 13.5}B{sub 9}Nb{sub 3} alloy with the Cu nanoparticles acting as catalytic nucleation sites. The interaction among the ferromagnetic nanocrystals via the residual amorphous matrix can be controlled by suitable choice of the amorphous alloy composition. Although demonstrated for a ferromagnetic system, the processing method may have much wider applicability for producing artificial nanostructures of a wide variety of materials when materials-specific catalysts and amorphous alloy compositions are judiciously chosen.

  14. Effect of iron and silicon in aluminium and its alloys

    International Nuclear Information System (INIS)

    Kovacs, I.

    1990-01-01

    The iron and silicon are the main impurities in aluminium, they are always present in alloys made from commercially pure base material. The solid solubility of iron in aluminium is very low, therefore its largest amount forms intermetallic compounds the kind of which depends strongly on the other impurities of alloying elements. Although the solid solubility of silicon is much larger than that of the iron, it is the constituent of both the primary and the secondary particles, the structure of which depends in general on the iron-silicon concentration ratio. These Fe and Si containing particles can cause various and basic changes in the macroscopic properties of the alloy. Since commercially pure aluminium has extensive consumer and industrial use, it is very important to know, not only from scientific but also from practical point of view, the effect of iron and silicon on the physical and mechanical properties of aluminium and its alloys. The aim of the ''International Workshop on the Effect of Iron and Silicon in Aluminium and its Alloys'' was to clarify the present knowledge on this subject. The thirty papers presented at the Workshop and collected in this Proceedings cover many important fields of the subject. I hope that they will contribute to both the deeper understanding of the related phenomena and the improvement of technologies for producing better aluminium alloys

  15. Investigation of electrochemical behaviour and structure of oxide films on Ni60Nb40 alloy in amorphous and crystalline states

    International Nuclear Information System (INIS)

    Tomashov, N.D.; Skvortsova, I.B.; Gorodetskij, A.E.; Bogomolov, D.B.

    1987-01-01

    Electrochemical properties of Ni 60 Nb 40 alloy in amorphous and crystalline states as well as structure of oxide films forming during anode polarization in electrolytes on the surface of this alloy in both its states are investigated. It is stated that increased passive ability of Ni 60 Nb 40 alloys in amorphous state and high efficiency of chlorine evolution (2 n NaCl+HCl up to pH=0) anode process in comparison with crystalline state are defined by increased homogeneity and uniformity of passive films forming on amorphous alloy and their increased electron conductivity, that is in direct dependence on different structure of passive films forming on alloys in amorphous and crystalline states

  16. Properties of amorphous FeCoB alloy particles (abstract)

    DEFF Research Database (Denmark)

    Charles, S. W.; Wells, S.; Meagher, A.

    1988-01-01

    -ray diffraction. Magnetic measurements of the saturation magnetization, coercivity, and remanence of the particles have been measured. The transition from the amorphous-to-crystalline state has been studied using differential scanning calorimetry (DSC) and thermomagnetometry up to a temperature of 450 °C (see Fig......Amorphous and crystalline alloy particles (0.05–0.5 nm) of FexCoyBz in which the ratio x:y ranges from 0 to 1 have been prepared by the borohydride reduction of iron and cobalt salts in aqueous solution. The structure of the particles has been studied using Mössbauer spectroscopy and x....... 1). It has been shown that the fraction of boron in the alloys (10–35 at. %) is dependent upon the rate of addition of salts to borohydride and the concentration of cobalt present; this in turn influences the crystallinity and magnetic properties . Journal of Applied Physics is copyrighted...

  17. Raman study of localized recrystallization of amorphous silicon induced by laser beam

    KAUST Repository

    Tabet, Nouar A.

    2012-06-01

    The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.

  18. Raman study of localized recrystallization of amorphous silicon induced by laser beam

    KAUST Repository

    Tabet, Nouar A.; Al-Sayoud, Abduljabar; Said, Seyed; Yang, Xiaoming; Yang, Yang; Syed, Ahad A.; Diallo, Elhadj; Wang, Zhihong; Wang, Xianbin; Johlin, Eric; Simmons, Christine; Buonassisi, Tonio

    2012-01-01

    The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.

  19. Theory of structure and properties of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chiarotti, G.L.; Car, R. (International School of Advanced Studies, Trieste (Italy) Interuniversitario Nazionale di Fisica della Materia (INFM), Trieste (Italy). Lab. Tecnologie Avanzate Superfici e Catalisi); Buda, F. (International School of Advanced Studies, Trieste (Italy) Ohio State Univ., Columbus, OH (USA). Dept. of Physics); Parrinello, M. (International School of Advanced Studies, Trieste

    1990-01-01

    We have generated a computer model of hydrogenated amorphous silicon by first-principles molecular dynamics. Our results are in good agreement with the available experimental data, and provide new insight into the microscopic structure of this material. This should lead to a better understanding of the hydrogenation process. 13 refs., 2 figs.

  20. Amorphous-to-crystalline phase transformation by neutron irradiation of the alloy Fe83B17

    International Nuclear Information System (INIS)

    Weis, J.; Gabris, F.; Cerven, I.; Sitek, J.

    1984-01-01

    The purpose of the present work is to investigate the structural changes of amorphous Fe 83 B 17 alloy after irradiation with fast neutrons ( > 1 MeV) and to compare with the crystallization behaviour of the amorphous Fe 83 B 17 alloy after annealing. The structural changes were studied by Moessbauer spectroscopy and X-ray diffraction with the usual Fourier analysis. (author)

  1. The corrosion behaviour and structure of amorphous and thermally treated Fe-B-Si alloys

    International Nuclear Information System (INIS)

    Raicheff, R.; Zaprianova, V.; Petrova, E.

    2003-01-01

    The corrosion behaviour of magnetic amorphous alloys Fe 78 B 13 Si 9 , Fe 81 B 13 Si 4 C 2 and Fe 67 Co 18 Bi 4 S 1 obtained by rapid quenching from the melts are investigated in a model corrosive environment of 1N H 2 SO 4 . The structure of the alloys, is, characterized by DTA, SEM, TEM, X-ray and electron diffraction techniques. The dissolution kinetics of the,alloys is studied using gravimetric and electrochemical polarization measurements. It is established that the corrosion rate of the amorphous Fe 67 Co 18 Bt 4 S 1 alloy is up to 50 times lower than that of Fe 78 Bi 3 Si 9 alloy and the addition of cobalt leads to a considerable reduction of the rates of both partial corrosion reactions, while the addition of carbon results only in a moderate decrease (2-3 times) of the corrosion rate. It is also shown that the crystallization of the amorphous Fe 78 B 13 Si 9 alloy (at 700 o C for 3 h) leads to formation of multiphase structure consisting of crystalline phases α-Fe and Fe 3 (B,Si). After crystallization an increase of the rate of both hydrogen evolution and anodic dissolution reactions is observed which results in a considerable (an order of magnitude) increase of the corrosion rate of the alloy. (Original)

  2. Detection of charged particles in amorphous silicon layers

    International Nuclear Information System (INIS)

    Kaplan, S.N.; Morel, J.R.; Mulera, T.A.; Perez-Mendez, V.; Schnurmacher, G.; Street, R.A.

    1985-10-01

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics. 4 refs., 7 figs

  3. Megavoltage imaging with a large-area, flat-panel, amorphous silicon imager

    International Nuclear Information System (INIS)

    Antonuk, Larry E.; Yorkston, John; Huang Weidong; Sandler, Howard; Siewerdsen, Jeffrey H.; El-Mohri, Youcef

    1996-01-01

    Purpose: The creation of the first large-area, amorphous silicon megavoltage imager is reported. The imager is an engineering prototype built to serve as a stepping stone toward the creation of a future clinical prototype. The engineering prototype is described and various images demonstrating its properties are shown including the first reported patient image acquired with such an amorphous silicon imaging device. Specific limitations in the engineering prototype are reviewed and potential advantages of future, more optimized imagers of this type are presented. Methods and Materials: The imager is based on a two-dimensional, pixelated array containing amorphous silicon field-effect transistors and photodiode sensors which are deposited on a thin glass substrate. The array has a 512 x 560-pixel format and a pixel pitch of 450 μm giving an imaging area of ∼23 x 25 cm 2 . The array is used in conjunction with an overlying metal plate/phosphor screen converter as well as an electronic acquisition system. Images were acquired fluoroscopically using a megavoltage treatment machine. Results: Array and digitized film images of a variety of anthropomorphic phantoms and of a human subject are presented and compared. The information content of the array images generally appears to be at least as great as that of the digitized film images. Conclusion: Despite a variety of severe limitations in the engineering prototype, including many array defects, a relatively slow and noisy acquisition system, and the lack of a means to generate images in a radiographic manner, the prototype nevertheless generated clinically useful information. The general properties of these amorphous silicon arrays, along with the quality of the images provided by the engineering prototype, strongly suggest that such arrays could eventually form the basis of a new imaging technology for radiotherapy localization and verification. The development of a clinically useful prototype offering high

  4. Production of rare earth-silicon-iron alloys

    International Nuclear Information System (INIS)

    Mehra, O.K.; Bose, D.K.; Gupta, C.K.

    1987-01-01

    At Metallurgy Division, BARC, improved procedures for producing rare earth-silicon alloys have been investigated. In these methods, reduction of mixed rare earth oxide by a ferro-silicon and aluminium mixture in combination with CaO-MgO flux/CaO-CaF 2 flux have been tried to prepare an alloy product with a higher rare earth recovery at a higher rare earth content than the present commercial production method. The rare earth recovery using CaO-CaF 2 was 85 per cent while in the case of CaO-MgO flux it was 76 per cent. The corresponding rare earth contents in the alloy correspond to 40 per cent and 55 per cent by weight respectively. (author)

  5. Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures.

    Science.gov (United States)

    Mughal, A; El Demellawi, J K; Chaieb, Sahraoui

    2014-12-14

    Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.

  6. Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures

    KAUST Repository

    Mughal, Asad Jahangir

    2014-01-01

    Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material\\'s luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon. This journal is

  7. Role of the bond defect for structural transformations between crystalline and amorphous silicon: A molecular-dynamics study

    International Nuclear Information System (INIS)

    Stock, D. M.; Weber, B.; Gaertner, K.

    2000-01-01

    The relation between the bond defect, which is a topological defect, and structural transformations between crystalline and amorphous silicon, is studied by molecular-dynamics simulations. The investigation of 1-keV boron implantation into crystalline silicon proves that the bond defect can also be generated directly by collisional-induced bond switching in addition to its formation by incomplete recombination of primary defects. This supports the assumption that the bond defect may play an important role in the amorphization process of silicon by light ions. The analysis of the interface between (001) silicon and amorphous silicon shows that there are two typical defect configurations at the interface which result from two different orientations of the bond defect with respect to the interface. Thus the bond defect appears to be a characteristic structural feature of the interface. Moreover, annealing results indicate that the bond defect acts as a growth site for interface-mediated crystallization

  8. Formation of amorphous Ti-50at.%Pt by solid state reactions during mechanical alloying

    CSIR Research Space (South Africa)

    Mahlatji, ML

    2013-10-01

    Full Text Available Mechanical alloying of an equiatomic mixture of crystalline elemental powders of Ti and Pt in a high-energy ball mill results in formation of an amorphous alloy by solid-state reactions. Mechanical alloying was carried out in an argon atmosphere...

  9. Amorphous silicon cells for the measurement of photosynthetically active radiation; Utilisation des cellules au silicium amorphe pour la mesure du rayonnement photosynthétiquement actif (400-700 nm)

    Energy Technology Data Exchange (ETDEWEB)

    Chartier, M. [Institut National de la Recherche Agronomique, Thiverval-Grignon (France); Bonchretien, P.; Allirand, J. M.; Gosse, G.

    1989-07-01

    Numerical simulation and experimental measurements from amorphous silicon cells in comparison with these now used in ecophysiology illustrate the interest of amorphous silicon cells for the measurement of PAR incident, reflected, and transmitted below the canopy [French] La simulation et la confrontation expérimentale ces réponses des cellules au silicium amorphe par rapport à celles des capteurs existants montrent l’intérêt des cellules au silicium amorphe pour la mesure du rayonnement PAR (exprimé en densité de flux de photons) incident, réfléchi et transmis sous un couvert végétal.

  10. Moessbauer study of isothermally annealed amorphous Fe-Nb-Cu-Si-B alloys

    International Nuclear Information System (INIS)

    Sitek, J.; Toth, I.; Miglierini, M.

    1993-01-01

    Amorphous ribbons of Fe 73.5 Nb 3 Cu 1 Si 13.5 B 9 have been annealed above the crystallization temperature. Annealed samples consisted of crystalline and amorphous phases in a wide temperature range. Two samples of different thicknesses of 33 μm and 27 μm were isothermally annealed at a temperature of 545 C from 0.5 to 5 h in a vacuum furnace. The amount of crystalline phase increases rapidly in the ticker sample. The crystalline part of the Moessbauer spectrum consists of four sharp sextets which can be assigned to a DO 3 -structure FeSi alloy. After 700 C annealing the amorphous phase was not observed and the crystalline phase consisted of the DO 3 -structure FeSi alloy, paramagnetic FeNbB and presumably Fe 23 B 6 and Fe 3 SiB 2 . (orig.)

  11. Electrical resistivity of amorphous Fesub(1-x) Bsub(x) alloys

    International Nuclear Information System (INIS)

    Paja, A.; Stobiecki, T.

    1984-07-01

    The concentration dependence of the electrical resistivity of amorphous Fesub(1-x) Bsub(x) alloys has been studied over a broad composition range. The measurements for RF sputtered films made in the liquid helium temperature have been analyzed in the framework of the diffraction model. The calculated results are in good agreement with the experimental data in the range of concentration 0.12< x <0.37 where samples are amorphous and have a metallic character. (author)

  12. Moessbauer study of the amorphous Pd70Fe10Si20 alloy upon transition to the crystalline state

    International Nuclear Information System (INIS)

    Sitek, J.; Prejsa, M.; Cirak, J.; Hucl, M.; Lipka, J.

    1978-01-01

    Foils of the amorphous alloy Pd 70 Fe 10 Si 20 were investigated after isothermal heating at the temperature range 350-450 0 C with a heating period from 15 min to 4 h. At 350 0 C no changes were observed in the shape of the Moessbauer spectra. At 400 0 C and at 450 0 C up to 30 min only the parameters of Moessbauer spectra consisting of two quadrupole doublets corresponding to palladium and silicon vicinities of iron atoms were changed. After further heating at 450 0 C crystalline phases of Pd 3 Fe and Fe 3 Si appeared on the Moessbauer spectra. (Auth.)

  13. Structural investigation of Fe(Cu)ZrB amorphous alloy

    International Nuclear Information System (INIS)

    Duhaj, P.; Janickovic, D.

    1996-01-01

    The crystallization process in Fe 86 (Cu 1 )Zr 7 B 6 and Fe 87 Zr 7 B 6 is investigated using the methods of transmission electron microscopy, electron and X-ray diffraction and resistometry. Two crystallization reactions take place during thermal annealing of amorphous Fe 86 (Cu 1 )Zr 7 B 6 and Fe 87 Zr 7 B 6 alloys. In both alloys the first crystallization begins with the formation of nanocrystalline α-Fe at temperature to approximately 800 K. The second crystallization starts above 1000 K; the nanocrystalline phase dissolves and together with the remaining amorphous matrix form rough grains of α-Fe and dispersed Fe 23 Zr 6 phases. From Moessbauer spectroscopy it seems that there exist two neighbourhoods of Fe atoms in the amorphous structure. One of them is characterized by low Zr content and is responsible for the high-field component of the hyperfine field distribution p(H). The second one is rich in Zr and B and is responsible for the low-field component of p(H). This is in accord with the observation of two crystallization steps separated by a large interval of temperatures due to the existence of two chemically different regions or clusters. (orig.)

  14. A Fundamental Approach to Developing Aluminium based Bulk Amorphous Alloys based on Stable Liquid Metal Structures and Electronic Equilibrium - 154041

    Science.gov (United States)

    2017-03-28

    AFRL-AFOSR-JP-TR-2017-0027 A Fundamental Approach to Developing Aluminium -based Bulk Amorphous Alloys based on Stable Liquid-Metal Structures and...to 16 Dec 2016 4.  TITLE AND SUBTITLE A Fundamental Approach to Developing Aluminium -based Bulk Amorphous Alloys based on Stable Liquid-Metal...Air Force Research Laboratory for accurately predicting compositions of new amorphous alloys specifically based on aluminium with properties superior

  15. Radiation resistance of amorphous silicon alloy solar cells

    International Nuclear Information System (INIS)

    Hanak, J.J.; Chen, E.; Myatt, A.; Woodyard, J.R.

    1987-01-01

    The radiation resistance of a-Si alloy solar cells when bombarded by high energy particles is reviewed. The results of investigations of high energy proton radiation resistance of a-Si alloy thin film photovoltaic cells are reported. Irradiations were carried out with 200 keV and 1.00 MeV protons with fluences ranging betweeen 1E11 and 1E15 cm-2. Defect generation and passivation mechanisms were studied using the AM1 conversion efficiency and isochronal anneals. It is concluded that the primary defect generation mechanism results from the knock-on of Si and Ge in the intrinsic layer of the cells. The defect passivation proceeds by the complex annealing of Si and Ge defects and not by the simple migration of hydrogen

  16. Amorphous-polycrystal transition induced by laser pulse in self-ion implanted silicon

    International Nuclear Information System (INIS)

    Foti, G.; Rimini, E.; Vitali, G.; Bertolotti, M.

    1977-01-01

    Reflection high energy electron diffraction has been used to investigate the amorphous to polycrystalline structure transition in silicon induced by laser pulse. The power density of the ruby laser pulse, in the free generation mode, has been maintained below the threshold to induce surface damage. Depth analysis has been carried out in silicon crystal using the channeling effect technique. (orig.) [de

  17. Crystallization of the amorphous Fe{sub 80}Zr{sub 12}B{sub 8} alloy under controlled heating

    Energy Technology Data Exchange (ETDEWEB)

    Huang, H. [School of Engineering (H6), University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Shao, G. [Centre for Materials Research and Innovation, University of Bolton, Bolton BL3 5AB (United Kingdom)], E-mail: G.Shao@bolton.ac.uk; Tsakiropoulos, P. [Department of Engineering Materials, Sir Robert Hadfirld Building, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2008-07-14

    The devitrification process of amorphous Fe{sub 80}Zr{sub 12}B{sub 8} alloy ribbons were studied under controlled thermal conditions. The major crystallization event during continuous heating with differential scanning calorimetory (DSC) is dictated by diffusion controlled growth and the associated atom mobility of the slow diffusing species Zr. The existence of prior nano-crystals formed by pre-annealing below the crystallization temperature had little effect on the major crystallization temperature. The crystallization sequence during heating was: amorphous {yields} amorphous + {alpha}-Fe + Fe{sub 3}Zr(B) {yields} amorphous + {alpha}-Fe + Fe{sub 3}Zr(B) + Fe{sub 2}Zr. Different from previous findings in alloys of lower Zr and B contents, the peak for the crystallization of the {alpha}-Fe phase alone is missing in the DSC traces of this alloy.

  18. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Li, Da; Kunz, Thomas; Wolf, Nadine; Liebig, Jan Philipp; Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard; Göken, Mathias; Brabec, Christoph J.

    2015-01-01

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area on the graphite substrate. The optical properties of the SiN x /a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN x /a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN x /a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  19. Formation of nanocrystalline and amorphous phase of Al-Pb-Si-Sn-Cu powder during mechanical alloying

    International Nuclear Information System (INIS)

    Ran Guang; Zhou Jingen; Xi Shengqi; Li Pengliang

    2006-01-01

    Al-15%Pb-4%Si-1%Sn-1.5%Cu alloys (mass fraction, %) were prepared by mechanical alloying (MA). Phase transformation and microstructure characteristics of the alloy powders were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the nanocrystalline supersaturated solid solutions and amorphous phase in the powders are obtained during MA. The effect of ball milling is more evident to lead than to aluminum. During MA, the mixture powders are firstly fined, alloyed, nanocrystallized and then the nanocrystalline partly transforms to amorphous phase. A thermodynamic model is developed based on semi-experimental theory of Miedema to calculate the driving force for phase evolution. The thermodynamic analysis shows that there is no chemical driving force to form a crystalline solid solution from the elemental components. But for the amorphous phase, the Gibbs free energy is higher than 0 for the alloy with lead content in the ranges of 0-86.8 at.% and 98.4-100 at.% and lower than 0 in range of 86.8-98.4 at.%. For the Al-2.25 at.%Pb (Al-15%Pb, mass fraction, %), the driving force for formation of amorphization and nanocrystalline supersaturated solid solutions are provided not by the negative heat of mixing but by mechanical work

  20. Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D.; Goodman, C.; Fujieda, I.

    1992-07-01

    We describe the characteristics of thin (1 μm) and thick (> 30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, γ rays and thermal neutrons. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2∼5 μm) gadolinium converters on 30 μm thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described

  1. PECVD deposition of device-quality intrinsic amorphous silicon at high growth rate

    Energy Technology Data Exchange (ETDEWEB)

    Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

    1993-11-01

    The combined influence of RF-power density (RFP) and silane flow-rate ([Phi]) on the deposition rate of plasma-enhanced chemical vapour deposition (PECVD) intrinsic amorphous silicon has been investigated. The correlation of the results obtained from the characterisation of the material with the silane deposition efficiency, as deduced from mass spectrometry, has led to an interpretation allowing to deposit intrinsic amorphous-silicon films having an optical gap of 1.87 eV and a photoconductive ratio (ratio of ambient-temperature conductivities under 1 sun AM1 and in dark) of 6 orders of magnitude at growth rates up to 10 A/s, without any structural modification of the PECVD system used. Such results are considered of high relevance regarding industrial competitiveness. (orig.)

  2. Resistivity and magnetoresistivity of amorphous rare-earth alloys

    Science.gov (United States)

    Borchi, E.; Poli, M.; De Gennaro, S.

    1982-05-01

    The resistivity and magnetoresistivity of amorphous rare-earth alloys are studied starting from the general approach of Van Peski-Tinbergen and Dekker. The random axial crystal-field and the magnetic correlations between the rare-earth ions are consistently taken into account. The characteristic features of the available experimental data are explained both of the case of random ferromagnetic and antiferromagnetic order.

  3. Ab initio molecular dynamics simulation of the liquid and amorphous structure of Mg65Cu25Gd10 alloy

    International Nuclear Information System (INIS)

    Gao, R.; Zhao, Y.F.; Liu, X.J.; Liu, Z.K.; Hui, X.

    2013-01-01

    The liquid and amorphous structures of Mg 65 Cu 25 Gd 10 alloy were studied by using molecular dynamics methods within the frame of density functional theory. The generalized and partial pair correlation functions, structure factors, coordination numbers and bond pairs for this alloy were analyzed. It is shown that this alloy exhibit typical characterization of liquid structure at the temperature higher than 750 K, and of amorphous structure with shoulders on the second diffuse peaks of the pair correlation functions curves at room temperature. The local short and medium range ordering tends to be increased with the decrease of temperature. Both the liquid and the amorphous structures are mainly composed of icosahedral type of bond pairs. Perfect and distorted icosahedra can be differentiated from the atomic configuration of the amorphous alloy

  4. Formation and crystallization kinetics of Nd-Fe-B-based bulk amorphous alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Qiong; Ge, Hongliang; Zhang, Pengyue; Li, Dongyun; Wang, Zisheng [China Jiliang University, Magnetism Key Laboratory of Zhejiang Province, Hangzhou (China)

    2014-06-15

    In order to improve the glass-forming ability (GFA) of Nd-Fe-B ternary alloys to obtain fully amorphous bulk Nd-Fe-B-based alloy, the effects of Mo and Y doping on GFA of the alloys were investigated. It was found that the substitution of Mo for Fe and Y for Nd enhanced the GFA of the Nd-Y-Fe-Mo-B alloys. It was also revealed that the GFA of the samples was optimized by 4 at.% Mo doping and increased with theYcontent. The fully amorphous structures were all formed in the Nd{sub 6-x}Y{sub x}Fe{sub 68}Mo{sub 4}B{sub 22} (x =1-5) alloy rods with 1.5 mm-diameter. After subsequent crystallization, the devitrified Nd{sub 3}Y{sub 3}Fe{sub 68}Mo{sub 4}B{sub 22} alloy rod exhibited a uniform distribution of grains with a coercivity of 364.1 kA/m. The crystallization behavior of Nd{sub 3}Y{sub 3}Fe{sub 68}Mo{sub 4}B{sub 22} BMG was investigated in isothermal situation. The Avrami exponent n determined by JAM plot is lower than 2.5, implying that the crystallization is mainly governed by a growth of particles with decreasing nucleation rate. (orig.)

  5. Study of an amorphous alloy core transformer

    Science.gov (United States)

    Nafalski, A.; Frost, D. C.

    1994-05-01

    Amorphous core transformers (ACT) have become a technological and commercial reality and there are an estimated 400,000 units installed worldwide [1]. Their applications reflect changes in buying practices, where the efficiency evaluation is an important factor in the purchasing decision for distribution transformers. Use of the total ownership cost (TOC) concept facilities the selection of a transformer on the basis of its performance. This concept is used in this paper to investigate the feasibility of applying a distribution ACT in Western Australian (WA). A 10 kVA ACT, evaluated by the TOC method, was compared with a traditional silicon iron core transformer of the same rating. The cost of amorphous metal (relative to alternative materials), the distribution load profile, and the values of capitalised loss costs are factors which affect the cost effectiveness of ACTs.

  6. Wetting behavior of molten In-Sn alloy on bulk amorphous and crystalline Cu40Zr44Al8Ag8

    International Nuclear Information System (INIS)

    Ma, G. F.; Zhang, H. F.; Li, H.; Hu, Z. Q.

    2007-01-01

    Using the sessile-drop method, the wettability of the molten In-Sn alloy on bulk amorphous and crystalline Cu 40 Zr 44 Al 8 Ag 8 alloy was studied at different temperatures. It was found that the equilibrium contact angle of In-Sn alloy melt on bulk amorphous substrate was smaller than that of the crystalline one. An intermetallic compound existed at the interface of In-Sn alloy on amorphous Cu 40 Zr 44 Al 8 Ag 8 , while no intermediate reaction layer was formed at the interface of In-Sn alloy on crystalline Cu 40 Zr 44 Al 8 Ag 8 in the temperature range studied

  7. Wetting and crystallization at grain boundaries: Origin of aluminum-induced crystallization of amorphous silicon

    International Nuclear Information System (INIS)

    Wang, J.Y.; He, D.; Zhao, Y.H.; Mittemeijer, E.J.

    2006-01-01

    It has been shown experimentally that the grain boundaries in aluminium in contact with amorphous silicon are the necessary agents for initiation of the crystallization of silicon upon annealing temperatures as low as 438 K. Thermodynamic analysis has shown (i) that Si can 'wet' the Al grain boundaries due to the favorable Si/Al interface energy as compared to the Al grain-boundary energy and (ii) that Si at the Al grain boundaries can maintain its amorphous state up to a thickness of about 1.0 nm. Beyond that thickness crystalline Si develops at the Al grain boundaries

  8. A new tevchnique for production of amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Andrade, A.M. de; Pereyra, I.; Sanematsu, M.S.; Corgnier, S.L.L.; Fonseca, F.J.

    1984-01-01

    It is presented a new technique for the production of amorphous silicon solar cells based on the development of thin films of a-Si in a reactor in which the decomposition of the sylane, induced by capacitively coupled RF, and the film deposition occur in separate chambers. (M.W.O.) [pt

  9. Hyperfine interactions and some thermomagnetic properties of amorphous FeZr(CrNbBCu alloys

    Directory of Open Access Journals (Sweden)

    Łukiewska Agnieszka

    2017-06-01

    Full Text Available In this research, we studied the magnetic phase transition by Mössbauer spectroscopy and using vibrating sample magnetometer for amorphous Fe86-xZr7CrxNb2Cu1B4 (x = 0 or 6 alloys in the as-quenched state and after accumulative annealing in the temperature range 600-750 K. The Mössbauer investigations were carried out at room and nitrogen temperatures. The Mössbauer spectra of the investigated alloys at room temperature are characteristic of amorphous paramagnets and have a form of asymmetric doublets. However, at nitrogen temperature, the alloys behave like ferromagnetic amorphous materials. The two components are distinguished in the spectrum recorded at both room and nitrogen temperatures. The low field component in the distribution of hyperfine field induction shifts towards higher field with the annealing temperature. It is assumed that during annealing at higher temperature, due to diffusion processes, the grains of α-Fe are created in the area corresponding to this component. Both investigated alloys show the invar effect and the decrease of hyperfine field induction after annealing at 600 K for 10 min is observed. It is accompanied by the lowering of Curie temperature.

  10. Structural investigation of Fe(Cu)ZrB amorphous alloy

    Energy Technology Data Exchange (ETDEWEB)

    Duhaj, P. [Slovenska Akademia Vied, Bratislava (Slovakia). Fyzikalny Ustav; Matko, I. [Slovenska Akademia Vied, Bratislava (Slovakia). Fyzikalny Ustav; Svec, P. [Slovenska Akademia Vied, Bratislava (Slovakia). Fyzikalny Ustav; Sitek, J. [Department of Nuclear Physics and Technology, Slovak Technical University, 81219 Bratislava (Slovakia); Janickovic, D. [Slovenska Akademia Vied, Bratislava (Slovakia). Fyzikalny Ustav

    1996-07-01

    The crystallization process in Fe{sub 86}(Cu{sub 1})Zr{sub 7}B{sub 6} and Fe{sub 87}Zr{sub 7}B{sub 6} is investigated using the methods of transmission electron microscopy, electron and X-ray diffraction and resistometry. Two crystallization reactions take place during thermal annealing of amorphous Fe{sub 86}(Cu{sub 1})Zr{sub 7}B{sub 6} and Fe{sub 87}Zr{sub 7}B{sub 6} alloys. In both alloys the first crystallization begins with the formation of nanocrystalline {alpha}-Fe at temperature to approximately 800 K. The second crystallization starts above 1000 K; the nanocrystalline phase dissolves and together with the remaining amorphous matrix form rough grains of {alpha}-Fe and dispersed Fe{sub 23}Zr{sub 6} phases. From Moessbauer spectroscopy it seems that there exist two neighbourhoods of Fe atoms in the amorphous structure. One of them is characterized by low Zr content and is responsible for the high-field component of the hyperfine field distribution p(H). The second one is rich in Zr and B and is responsible for the low-field component of p(H). This is in accord with the observation of two crystallization steps separated by a large interval of temperatures due to the existence of two chemically different regions or clusters. (orig.)

  11. Properties of amorphous silicon thin films synthesized by reactive particle beam assisted chemical vapor deposition

    International Nuclear Information System (INIS)

    Choi, Sun Gyu; Wang, Seok-Joo; Park, Hyeong-Ho; Jang, Jin-Nyoung; Hong, MunPyo; Kwon, Kwang-Ho; Park, Hyung-Ho

    2010-01-01

    Amorphous silicon thin films were formed by chemical vapor deposition of reactive particle beam assisted inductively coupled plasma type with various reflector bias voltages. During the deposition, the substrate was heated at 150 o C. The effects of reflector bias voltage on the physical and chemical properties of the films were systematically studied. X-ray diffraction and Raman spectroscopy results showed that the deposited films were amorphous and the films under higher reflector voltage had higher internal energy to be easily crystallized. The chemical state of amorphous silicon films was revealed as metallic bonding of Si atoms by using X-ray photoelectron spectroscopy. An increase in reflector voltage induced an increase of surface morphology of films and optical bandgap and a decrease of photoconductivity.

  12. Photodecomposition of Hg - Photo - CVD monosilane. Application to hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Aka, B.

    1989-04-01

    The construction of a Hg-photo-CVD device is discussed. The system enables the manufacturing of hydrogenous thin films of amorphous silicon from monosilane compound. The reaction mechanisms taking place in the gaseous phase and at the surface, and the optimal conditions for the amorphous silicon film growth are studied. The analysis technique is based on the measurement of the difference between the condensation points of the gaseous components of the mixture obtained from the monosilane photolysis. A kinetic simplified model is proposed. Conductivity measurements are performed and the heat treatment effects are analyzed. Trace amounts of oxygen and carbon are found in the material. No Hg traces are detected by SIMS analysis [fr

  13. Moessbauer study of isothermally annealed amorphous Fe-Nb-Cu-Si-B alloys

    Energy Technology Data Exchange (ETDEWEB)

    Sitek, J. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia)); Toth, I. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia)); Miglierini, M. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia))

    1993-11-01

    Amorphous ribbons of Fe[sub 73.5]Nb[sub 3]Cu[sub 1]Si[sub 13.5]B[sub 9] have been annealed above the crystallization temperature. Annealed samples consisted of crystalline and amorphous phases in a wide temperature range. Two samples of different thicknesses of 33 [mu]m and 27 [mu]m were isothermally annealed at a temperature of 545 C from 0.5 to 5 h in a vacuum furnace. The amount of crystalline phase increases rapidly in the ticker sample. The crystalline part of the Moessbauer spectrum consists of four sharp sextets which can be assigned to a DO[sub 3]-structure FeSi alloy. After 700 C annealing the amorphous phase was not observed and the crystalline phase consisted of the DO[sub 3]-structure FeSi alloy, paramagnetic FeNbB and presumably Fe[sub 23]B[sub 6] and Fe[sub 3]SiB[sub 2]. (orig.)

  14. Influence of Weak External Magnetic Field on Amorphous and Nanocrystalline Fe-based Alloys

    Science.gov (United States)

    Degmová, J.; Sitek, J.

    2010-07-01

    Nanoperm, Hitperm and Finamet amorphous and nanocrystalline alloys were measured by Mössbauer spectrometry in a weak external magnetic field of 0.5 T. It was shown that the most sensitive parameters of Mössbauer spectra are the intensities of the 2nd and the 5th lines. Rather small changes were observed also in the case of internal magnetic field values. The spectrum of nanocrystalline Nanoperm showed the increase in A23 parameter (ratio of line intensities) from 2.4 to 3.7 and decrease of internal magnetic field from 20 to 19 T for amorphous subspectrum under the influence of magnetic field. Spectrum of nanocrystalline Finemet shown decrease in A23 parameter from 3.5 to 2.6 almost without a change in the internal magnetic field value. In the case of amorphous Nanoperm and Finemet samples, the changes are almost negligible. Hitperm alloy showed the highest sensitivity to the weak magnetic field, when the A23 parameter increased from 0.4 to 2.5 in the external magnetic fields. The A23 parameter of crystalline subspectrum increased from 2.7 to 3.8 and the value of internal magnetic field corresponding to amorphous subspectrum increased from 22 to 24 T. The behavior of nanocrystalline alloys under weak external magnetic field was analyzed within the three-level relaxation model of magnetic dynamics in an assembly of single-domain particles.

  15. Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures

    International Nuclear Information System (INIS)

    Morel, D.L.; Moustakas, T.D.

    1981-01-01

    The diode properties of reactively sputtered hydrogenated amorphous silicon Schottky barrier structures (a-SiH/sub x/ /Pt) have been investigated. We find a systematic relation between the changes in the open circuit voltage, the barrier height, and the diode quality factor. These results are accounted for by assuming that hydrogen incorporation into the amorphous silicon network removes states from the top of the valence band and sharpens the valence-band tail. Interfacial oxide layers play a significant role in the low hydrogen content, and low band-gap regime

  16. Corrosion-resistant amorphous alloy ribbons for electromagnetic filtration of iron rusts from water

    International Nuclear Information System (INIS)

    Kawashima, Asahi; Asami, Katsuhiko; Sato, Takeaki; Hashimoto, Koji

    1985-01-01

    An attempt was made to use corrosion-resistant amorphous Fe-9Cr-13P-7C alloy ribbons as an electromagnetic filter material for trapping various iron rusts suspended in water at 40 0 C. The ferrimagnetic Fe 3 O 4 rust was trapped with the 100 % efficiency and paramagnetic rusts such as α-Fe 2 O 3 , α-FeOOH and amorphous ferric oxyhydroxide were trapped with certain efficiencies at the magnetic field strength of 0.5-10 kOe. The regeneration of the filter by back-washing was easy. The trapping capacity of electromagnetic filter was proportional to the edge length of the filter material where the high magnetic field strength existed. Therefore, melt-spun thin and narrow amorphous alloy ribbons having the high corrosion resistance have the potential utility as electromagnetic filter material. (author)

  17. Minimum ionizing particle detection using amorphous silicon diodes

    Energy Technology Data Exchange (ETDEWEB)

    Xi, J.; Hollingsworth, R.E.; Buitrago, R.H. (Glasstech Solar, Inc., Wheat Ridge, CO (USA)); Oakley, D.; Cumalat, J.P.; Nauenberg, U. (Colorado Univ., Boulder (USA). Dept. of Physics); McNeil, J.A. (Colorado School of Mines, Golden (USA). Dept. of Physics); Anderson, D.F. (Fermi National Accelerator Lab., Batavia, IL (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1991-03-01

    Hydrogenated amorphous silicon pin diodes have been used to detect minimum ionizing electrons with a pulse height signal-to-noise ratio exceeding 3. A distinct signal was seen for shaping times from 100 to 3000 ns. The devices used had a 54 {mu}m thick intrinsic layer and an active area of 0.1 cm{sup 2}. The maximum signal was 3200 electrons with a noise width of 950 electrons for a shaping time of 250 ns. (orig.).

  18. Effect of Co content on structure and magnetic behaviors of high induction Fe-based amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Roy, Rajat K., E-mail: rajat@nmlindia.org; Panda, Ashis K.; Mitra, Amitava

    2016-11-15

    The replacement of Fe with Co is investigated in the (Fe{sub 1−x}Co{sub x}){sub 79}Si{sub 8.5}B{sub 8.5}Nb{sub 3}Cu{sub 1} (x=0, 0.05, 0.2, 0.35, 0.5) amorphous alloys. The alloys are synthesized in the forms of ribbons by single roller melt spinning technique, and the structural and magnetic properties of annealed ribbons are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM), B–H curve tracer, respectively. All as-cast alloys are structurally amorphous, however, their magnetic properties are varying with Co addition. The Co addition within 5–20 at% results in moderate thermal stability, saturation induction, Curie temperature and lowest coercivity, while 35 at% Co causes highest saturation induction, coercivity, Curie temperature and lowest thermal stability. On devitrification, the magnetic properties change with the generation of α-FeCo nanocrystallites and (FeCo){sub 23}B{sub 6}, Fe{sub 2}B phases during primary and secondary crystallization stages, respectively. A small amount Co is advantageous for maintaining finer nanocrystallites in amorphous matrix even after annealing at 600 °C, leading to high saturation magnetization (>1.5 T) and low coercivity (~35 A/m). The improved magnetic properties at elevated temperatures indicate these alloys have a potential for high frequency transformer core applications. - Highlights: • The structural and magnetic behaviors of Fe based amorphous alloys have been investigated with the effect of Co content. • The Co has no adverse effect on amorphization of alloys. • A small amount Co causes the superior improvement of magnetic properties at elevated temperatures. • Therefore, it is important not only for academic research but also for industrial applied research.

  19. Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

    International Nuclear Information System (INIS)

    Matsumoto, Y.; Godavarthi, S.; Ortega, M.; Sanchez, V.; Velumani, S.; Mallick, P.S.

    2011-01-01

    Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO x :H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 o C.

  20. Gamma and Neutron Irradiation of Semitransparent Amorphous Silicon Sensors

    International Nuclear Information System (INIS)

    Carabe, J.; Fernandez, M. G.; Ferrando, A.; Fuentes, J.; Gandia, J.; Josa, M. I.; Molinero, A.; Oller, J. C.; Arce, P.; Calvo, E.; Figueroa, C. F.; Garcia, N.; Matorras, F.; Rodrigo, T.; Vila, I.; Virto, A. L.; Fenyvesi, A.; Molnar, J.; Sohler, D.

    1999-12-01

    Semitransparent amorphous silicon sensors are key elements for laser light 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in very hard radiation environment. We have irradiated with gammas, up to 10 Mrad, and neutrons, up to 10 ''14 cm''-2, two different type of sensors and measured their change in performance. (Author) 10 refs

  1. Amorphous phase formation in intermetallic Mg2Ni alloy synthesized by ethanol wet milling

    International Nuclear Information System (INIS)

    Wang, H.-W.; Chyou, S.-D.; Wang, S.-H.; Yang, M.-W.; Hsu, C.-Y.; Tien, H.-C.; Huang, N.-N.

    2009-01-01

    The hydriding/dehydriding properties of an intermetallic Mg 2 Ni alloy synthesized by wet ball milling in ethanol have been investigated. The appearance of the particle surface after different milling methods is one obvious difference. The alloyed powders prepared by either dry milling or wet milling under ethanol were characterized for phase content by X-ray diffractometer (XRD). The results show that two broad diffuse peaks, which are an ionic-organic-Mg amorphous material, appear in addition to the nickel element peaks. This unexpected amorphous phase has the special hydrogen absorbing/desorbing features.

  2. Defects study of hydrogenated amorphous silicon samples and their relation with the substrate and deposition conditions

    International Nuclear Information System (INIS)

    Darwich, R.

    2009-07-01

    The goal of this work is to study the properties of the defects aiming to explore the types of defects and the effect of various deposition parameters such as substrate temperature, the kind of the substrate, gas pressure and deposition rate. Two kinds of samples have been used; The first one was a series of Schottky diodes, and the second one a series of solar cells (p-i-n junction) deposited on crystalline silicon or on corning glass substrates with different deposition parameters. The deposition parameters were chosen to obtain materials whose their structures varying from amorphous to microcrystalline silicon including polymorphous silicon. Our results show that the polymorphous silicon samples deposited at high deposition rates present the best photovoltaic properties in comparison with those deposited at low rates. Also we found that the defects concentration in high deposition rate samples is less at least by two orders than that obtained in low deposition rate polymorphous, microcrystalline and amorphous samples. This study shows also that there is no effect of the substrate, or the thin films of highly doped amorphous silicon deposited on the substrate, on the creation and properties of these defects. Finally, different experimental methods have been used; a comparison between their results has been presented. (author)

  3. In vitro metal ion release and biocompatibility of amorphous Mg67Zn28Ca5 alloy with/without gelatin coating

    International Nuclear Information System (INIS)

    Chan, W.Y.; Chian, K.S.; Tan, M.J.

    2013-01-01

    Amorphous zinc-rich Mg–Zn–Ca alloys have exhibited good tissue compatibility and low hydrogen evolution in vivo. However, suboptimal cell–surface interaction on magnesium alloy surface observed in vitro could lead to reduced integration with host tissue for regenerative purpose. This study aims to improve cell–surface interaction of amorphous Mg 67 Zn 28 Ca 5 alloy by coating a gelatin layer by electrospinning. Coated/uncoated alloys were immersed and extracted for 3 days under different CO 2 . The immersion results showed that pH and metal ion release in the alloy extracts were affected by gelatin coating and CO 2 , suggesting their roles in alloy biocorrosion and a mechanism has been proposed for the alloy–CO 2 system with/without coating. Cytotoxicity results are evident that gelatin-coated alloy with 2-day crosslinking not only exhibited no indirect cytotoxicity, but also supported attachment of L929 and MG63 cell lines around/on the alloy with high viability. Therefore, amorphous Mg 67 Zn 28 Ca 5 alloy coated with gelatin by electrospinning technique provides a useful method to improve alloy biocompatibility. - Highlights: • Electrospinning is a new method to coat amorphous Mg 67 Zn 28 Ca 5 alloy with gelatin. • Gelatin-coated alloy has differential effect on pH and ion release at various CO 2 . • L929 cell proliferation correlates with Mg 2+ level in alloy extracts. • Biomimetic gelatin coating significantly improves cell–surface interaction

  4. Room-Temperature-Synthesized High-Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands.

    Science.gov (United States)

    Liu, Chao Ping; Ho, Chun Yuen; Dos Reis, Roberto; Foo, Yishu; Guo, Peng Fei; Zapien, Juan Antonio; Walukiewicz, Wladek; Yu, Kin Man

    2018-02-28

    In this work, we have synthesized Cd 1-x Ga x O 1+δ alloy thin films at room temperature over the entire composition range by radio frequency magnetron sputtering. We found that alloy films with high Ga contents of x > 0.3 are amorphous. Amorphous Cd 1-x Ga x O 1+δ alloys in the composition range of 0.3 < x < 0.5 exhibit a high electron mobility of 10-20 cm 2 V -1 s -1 with a resistivity in the range of 10 -2 to high 10 -4 Ω cm range. The resistivity of the amorphous alloys can also be controlled over 5 orders of magnitude from 7 × 10 -4 to 77 Ω cm by controlling the oxygen stoichiometry. Over the entire composition range, these crystalline and amorphous alloys have a large tunable intrinsic band gap range of 2.2-4.8 eV as well as a conduction band minimum range of 5.8-4.5 eV below the vacuum level. Our results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films with 0.3 < x < 0.4 have favorable optoelectronic properties as transparent conductors on flexible and/or organic substrates, whereas the band edges and electrical conductivity of films with 0.3 < x < 0.7 can be manipulated for transparent thin-film transistors as well as electron transport layers.

  5. Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

    International Nuclear Information System (INIS)

    Munoz, D.; Voz, C.; Blanque, S.; Ibarz, D.; Bertomeu, J.; Alcubilla, R.

    2009-01-01

    In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρ c ∼ 10 mΩ cm 2 ) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

  6. Effect of crystallization rate of initial alloy on magnetic properties of amorphous tape

    International Nuclear Information System (INIS)

    Roshchin, V.E.; Gribanov, V.P.; Shcherbakov, D.G.; Gun'kin, V.E.

    1994-01-01

    An investigation is made into mechanism and character of cooling rate effect when castings crytallizing on magnetic properties of rapidly quenched amorphous tape of Fe 78 B 12 Si 9 Ni 1 alloy. The increase of cooling rate and holding at heat for superheated melt is shown to result in a rise of Curie point of amorphous tape

  7. Preparation and Properties of EPDM/Silicone Alloy Using Maleated EPDM-polydimethylsiloxane Compatibilizer

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Doo Whan; Kim, Bum Jin [Hyperstructured Organic Materials Research Center, Department of Polymer Science and Engineering, Dankook University, Seoul (Korea); Shim, Dae Sup [Korea Electrotechnology Research Institute, Euiwang (Korea)

    2001-05-01

    EPDM used as an electrical insulating material was blended with silicone rubber and compatibilizer to improve weatherability, ozone resistance, and dielectric strength. The compatibilizer was prepared by imidizing maleated EPDM with {alpha},{omega}-aminopropyl polydimethylsiloxane. EPDM/ silicone alloy was prepared by blending EPDM and silicone rubber with weight ratio of 9/1, 7/3, 5/5, 3/7 and 1/9, maleated EPDM-polydimethylsiloxane copolymer, and dicumyl peroxide (DCP). The maximum tensile strength of 0.177 kgf/mm{sup 2}, elongation at break of 257%, and dielectric breakdown voltage 362.25 kV/cm were obtained from the alloy prepared with 9 to 1 weight ration of EPDM/silicone. The compatibility of the alloy was confirmed from the thermal characteristics measured using DMA and DSC. The morphology of the alloys was observed with SEM. 7 refs., 8 figs., 1 tab.

  8. An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

    Science.gov (United States)

    Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

    2017-09-01

    Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

  9. Structural and electrochemical study of the reaction of lithium with silicon nanowires

    KAUST Repository

    Chan, Candace K.; Ruffo, Riccardo; Hong, Seung Sae; Huggins, Robert A.; Cui, Yi

    2009-01-01

    The structural transformations of silicon nanowires when cycled against lithium were evaluated using electrochemical potential spectroscopy and galvanostatic cycling. During the charge, the nanowires alloy with lithium to form an amorphous Lix

  10. The configurational energy gap between amorphous and crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kail, F. [GRMT, Department of Physics, University of Girona, Montilivi Campus, 17071 Girona, Catalonia (Spain); Univ. Barcelona, Dept. Fisica Aplicada and Optica, 08028 Barcelona (Spain); Farjas, J.; Roura, P. [GRMT, Department of Physics, University of Girona, Montilivi Campus, 17071 Girona, Catalonia (Spain); Secouard, C. [Univ. Barcelona, Dept. Fisica Aplicada and Optica, 08028 Barcelona (Spain); Nos, O.; Bertomeu, J. [CEA Grenoble, LTS, 17 rue des Martyrs, 38054 Grenoble cedex (France); Roca i Cabarrocas, P. [LPICM, Ecole Polytechnique, 91128 Palaiseau (France)

    2011-11-15

    The crystallization enthalpy of pure amorphous silicon (a-Si) and hydrogenated a-Si was measured by differential scanning calorimetry (DSC) for a large set of materials deposited from the vapour phase by different techniques. Although the values cover a wide range (200-480 J/g), the minimum value is common to all the deposition techniques used and close to the predicted minimum strain energy of relaxed a-Si (240 {+-} 25 J/g). This result gives a reliable value for the configurational energy gap between a-Si and crystalline silicon. An excess of enthalpy above this minimum value can be ascribed to coordination defects. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Diffusion studies in amorphous NiZr alloys

    International Nuclear Information System (INIS)

    Hahn, H.; Averback, R.S.; Hoshino, K.; Rothman, S.J.

    1987-06-01

    Tracer impurity and self diffusion measurements have been made on amorphous (a-) NiZr alloys using radioactive tracer, Secondary Ion Mass Spectrometry and Rutherford backscattering techniques. The temperature dependence of diffusion in a-NiZr can be represented in the form D = D 0 exp(-Q/kT), with no structural relaxation effects being observed. The mobility of an atom in a-NiZr increased dramatically with decreasing atomic radius of the diffusing atom and also with decreasing Ni content for Ni concentrations below ≅40 at. %. These diffusion characteristics in a-NiZr are remarkably similar to those in α-Zr and α-Ti. These mechanisms assume that Zr and Ti provide a close packed structure, either crystalline or amorphous, through which small atoms diffuse by an interstitial mechanism and large atoms diffuse by a vacancy mechanism. 12 refs., 2 figs., 2 tabs

  12. Anharmonicity Rise the Thermal Conductivity in Amorphous Silicon

    Science.gov (United States)

    Lv, Wei; Henry, Asegun

    We recently proposed a new method called Direct Green-Kubo Modal Analysis (GKMA) method, which has been shown to calculate the thermal conductivity (TC) of several amorphous materials accurately. A-F method has been widely used for amorphous materials. However, researchers have found out that it failed on several different materials. The missing component of A-F method is the harmonic approximation and considering only the interactions of modes with similar frequencies, which neglect interactions of modes with large frequency difference. On the contrary, GKMA method, which is based on molecular dynamics, intrinsically includes all types of phonon interactions. In GKMA method, each mode's TC comes from both mode self-correlations (autocorrelations) and mode-mode correlations (crosscorrelations). We have demonstrated that the GKMA predicted TC of a-Si from Tersoff potential is in excellent agreement with one of experimental results. In this work, we will present the GKMA applications on a-Si using multiple potentials and gives us more insight of the effect of anharmonicity on the TC of amorphous silicon. This research was supported Intel grant AGMT DTD 1-15-13 and computational resources by NSF supported XSEDE resources under allocations DMR130105 and TG- PHY130049.

  13. Modelling the structure factors and pair distribution functions of amorphous germanium, silicon and carbon

    International Nuclear Information System (INIS)

    Dalgic, Seyfettin; Gonzalez, Luis Enrique; Baer, Shalom; Silbert, Moises

    2002-01-01

    We present the results of calculations of the static structure factor S(k) and the pair distribution function g(r) of the tetrahedral amorphous semiconductors germanium, silicon and carbon using the structural diffusion model (SDM). The results obtained with the SDM for S(k) and g(r) are of comparable quality with those obtained by the unconstrained Reverse Monte Carlo simulations and existing ab initio molecular dynamics simulations for these systems. We have found that g(r) exhibits a small peak, or shoulder, a weak remnant of the prominent third neighbour peak present in the crystalline phase of these systems. This feature has been experimentally found to be present in recently reported high energy X-ray experiments of amorphous silicon (Phys. Rev. B 60 (1999) 13520), as well as in the previous X-ray diffraction of as-evaporated amorphous germanium (Phys. Rev. B 50 (1994) 539)

  14. Modelling the structure factors and pair distribution functions of amorphous germanium, silicon and carbon

    Energy Technology Data Exchange (ETDEWEB)

    Dalgic, Seyfettin; Gonzalez, Luis Enrique; Baer, Shalom; Silbert, Moises

    2002-12-01

    We present the results of calculations of the static structure factor S(k) and the pair distribution function g(r) of the tetrahedral amorphous semiconductors germanium, silicon and carbon using the structural diffusion model (SDM). The results obtained with the SDM for S(k) and g(r) are of comparable quality with those obtained by the unconstrained Reverse Monte Carlo simulations and existing ab initio molecular dynamics simulations for these systems. We have found that g(r) exhibits a small peak, or shoulder, a weak remnant of the prominent third neighbour peak present in the crystalline phase of these systems. This feature has been experimentally found to be present in recently reported high energy X-ray experiments of amorphous silicon (Phys. Rev. B 60 (1999) 13520), as well as in the previous X-ray diffraction of as-evaporated amorphous germanium (Phys. Rev. B 50 (1994) 539)

  15. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  16. Structure of hydrogenated amorphous silicon from ab initio molecular dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Buda, F. (Department of Physics, The Ohio State University, 174 West 18th Avenue, Columbus, Ohio (USA)); Chiarotti, G.L. (International School for Advanced Studies, Strada Costiera 11, I-34014 Trieste (Italy) Laboratorio Tecnologie Avanzate Superfici e Catalisi del Consorzio Interuniversitario Nazionale di Fisica della Materia, Padriciano 99, I-34012 Trieste (Italy)); Car, R. (International School for Advanced Studies, Strada Costiera 11, I-34014 Trieste (Italy) Institut Romard de Recherche Numerique en Physique des Materiaux, CH-1015 Lausanne, Switzerland Department of Condensed Matter Physics, University of Geneva, CH-1211 Geneva (Switzerland)); Parrinello, M. (IBM Research Division, Zurich Research Laboratory, CH-8803 Rueschlikon (Switzerland))

    1991-09-15

    We have generated a model of hydrogenated amorphous silicon by first-principles molecular dynamics. Our results are in good agreement with the available experimental data and provide new insight into the microscopic structure of this material. The calculation lends support to models in which monohydride complexes are prevalent, and indicates a strong tendency of hydrogen to form small clusters.

  17. Implantation of xenon in amorphous carbon and silicon for brachytherapy application

    International Nuclear Information System (INIS)

    Marques, F.C.; Barbieri, P.F.; Viana, G.A.; Silva, D.S. da

    2013-01-01

    We report a procedure to implant high dose of xenon atoms (Xe) in amorphous carbon, a-C, and amorphous silicon, a-Si, for application in brachytherapy seeds. An ion beam assisted deposition (IBAD) system was used for the deposition of the films, where one ion gun was used for sputtering a carbon (or silicon) target, while the other ion gun was used to simultaneously bombard the growing film with a beam of xenon ion Xe + in the 0–300 eV range. Xe atoms were implanted into the film with concentration up to 5.5 at.%, obtained with Xe bombardment energy in the 50–150 eV range. X-ray absorption spectroscopy was used to investigate the local arrangement of the implanted Xe atoms through the Xe L III absorption edge (4.75 keV). It was observed that Xe atoms tend to agglomerate in nanoclusters in a-C and are dispersed in a-Si.

  18. ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

    Institute of Scientific and Technical Information of China (English)

    Y. Wang; H.Z. Li; C.N. Yu; G.M. Wu; I. Gordon; P. Schattschneider; O. Van Der Biest

    2007-01-01

    Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE(molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.

  19. Crystallization Behavior of A Bulk Amorphous Mg62Cu26Y12 Alloy

    Science.gov (United States)

    Wu, Shyue-Sheng; Chin, Tsung-Shune; Su, Kuo-Chang

    1994-07-01

    The crystallization temperature, the associated activation energy and the crystallized structure of a bulk amorphous Mg62Cu26Y12 alloy with a diameter of 2.5 mm were studied. It possesses a one-step crystallization behavior. The crystallization reaction was found to be represented by: AM(MG62Cu26Y12)→Mg2Cu+MgY+CuY+Mg, ( Tx=188°C, Eac=134 kJ/mol) where AM represents the amorphous state, T x the crystallization temperature at an infinitesimal heating rate, and E ac the associated activation energy. The amount of crystalline phases were found to be Mg2Cu:MgY:CuY=76:17:7. The Mg phase is identifiable only by high resolution electron microscopy, not by X-ray diffraction. The crystallization leads to a sharp rise in electrical resistivity which is reversed to those of iron-based amorphous alloys.

  20. Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

    OpenAIRE

    Meddeb, H.; Bearda, Twan; Payo, M. Recaman; Abdelwahab, I.; Abdulraheem, Yaser; Ezzaouia, H.; Gordon, I.; Szlufcik, J.; POORTMANS, Jef

    2015-01-01

    The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yield...

  1. Formation of soft magnetic high entropy amorphous alloys composites containing in situ solid solution phase

    Science.gov (United States)

    Wei, Ran; Sun, Huan; Chen, Chen; Tao, Juan; Li, Fushan

    2018-03-01

    Fe-Co-Ni-Si-B high entropy amorphous alloys composites (HEAACs), which containing high entropy solid solution phase in amorphous matrix, show good soft magnetic properties and bending ductility even in optimal annealed state, were successfully developed by melt spinning method. The crystallization phase of the HEAACs is solid solution phase with body centered cubic (BCC) structure instead of brittle intermetallic phase. In addition, the BCC phase can transformed into face centered cubic (FCC) phase with temperature rise. Accordingly, Fe-Co-Ni-Si-B high entropy alloys (HEAs) with FCC structure and a small amount of BCC phase was prepared by copper mold casting method. The HEAs exhibit high yield strength (about 1200 MPa) and good plastic strain (about 18%). Meanwhile, soft magnetic characteristics of the HEAs are largely reserved from HEAACs. This work provides a new strategy to overcome the annealing induced brittleness of amorphous alloys and design new advanced materials with excellent comprehensive properties.

  2. Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

    International Nuclear Information System (INIS)

    Kalay, Yunus Eren

    2008-01-01

    Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T 0 curves, which makes Al-Si a good candidate for solubility extension while the plunging T 0 line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 (micro)m with a Peclet number of ∼0.2, JH and TMK deviate from each other. This

  3. Crystallization induced of amorphous silicon by nickel

    International Nuclear Information System (INIS)

    Schmidt, J.A; Rinaldi, P; Budini, N; Arce, R; Buitrago, R.H

    2008-01-01

    Polycrystalline silicon (pc-Si) deposited on glass substrates is a very promising material for the production of different electronic devices, like thin film transistors, active matrices or solar cells. The crystallization of the amorphous silicon to obtain pc-Si can be achieved with different processes, among which nickel-induced crystallization is because it requires low concentrations of the metal and low annealing temperatures. Nucleation and growth of crystalline silicon are measured by the formation of silicide NiSi 2 , which has a lattice constant very similar to that of Si, and acts as a seed upon which crystalline grains can develop. The size of the pc-Si final grain depends on many factors, such as the initial concentration of Ni, the annealing time and temperature, and the presence of other atoms in the Si structure. This work presents a study on the influence of these parameters on the silicon crystallization process induced by Ni. We deposited a series of hydrogenated amorphous silicon samples (a-Si:H) on glass substrates, using the plasma-enhanced chemical vapor deposition method (PE-CVD) with silane gas (SiH 4 ). The deposition temperature was 200 o C, and we prepared intrinsic samples (i), lightly doped with boron (p), heavily doped with boron (p + ) and heavily doped with phosphorous (n + ). Each sample was divided into eight portions, depositing different concentrations of Ni into each one using the cathodic sputtering method. The concentration of Ni was determined by atomic adsorption spectroscopy, and included from 1.5 1 0 15 to 1.5 1 0 16 at/cm 2 . Later the samples were submitted to different thermal treatments in a circulating nitrogen atmosphere. In order to avoid violent dehydrogenation of the a-Si:H that damages the samples, the annealing was carried out gradually. In a first stage the samples were heated at a velocity of 0.5 o C /min up to 400 o C, holding them for 24 hrs at this temperature in order to reach hydrogen effusion. Heating

  4. High speed cinematography of cracks spreading under failure of amorphous metallic alloys

    International Nuclear Information System (INIS)

    Tabachnikova, E.D.; Golovin, Y.I.; Makarov, M.V.; Shibkov, A.A.

    1997-01-01

    The results of experimental investigation of crack propagation velocity in amorphous alloys are presented. It is shown that there exists some correlation between crack velocity and fracture mode and morphology (orig.)

  5. Amorphous silicon prepared from silane-hydrogen mixture

    International Nuclear Information System (INIS)

    Pietruszko, S.M.

    1982-09-01

    Amorphous silicon films prepared from a d.c. discharge of 10% SiH 4 - 90% H 2 mixture are found to have properties similar to those made from 100% SiH 4 . These films are found to be quite stable against prolonged light exposure. The effect of nitrogen on the properties of these films was investigated. It was found that instead of behaving as a classical donor, nitrogen introduces deep levels in the material. Field effect experiments on a-Si:H films at the bottom (film-substrate interface) and the top (film-vacuum interface) of the film are also reported. (author)

  6. Magnetic properties of amorphous alloys of Fe with La, Lu, Y, and Zr

    International Nuclear Information System (INIS)

    Heiman, N.; Kazama, N.

    1979-01-01

    In order to study the systematics of the Fe-Fe exchange in amorphous rare-earth--Fe alloys, without the complications associated with the magnetic characteristics of the rare-earth elements, amorphous films of Fe alloyed with La, Lu, Y, and Zr have been prepared with a wide range of Fe concentrations. Magnetization and Moessbauer-effect measurements were made. The magnetic properties of the alloys depended critically on the choice of rare earth (or rare-earth-like element). YFe and LuFe alloys were found to have spin-glass characteristics while LaFe and ZrFe alloys were found to be ferromagnetic, but with evidence that exchange fluctuations were nearly as large as the average exchange. Thus the nature of the Fe-Fe exchange interaction depends critically upon the species of the rare earth. The most important parameter in determining the magnetic behavior of these alloys appears to be the size of the rare-earth atom, with large rare-earth atoms resulting in a smaller ratio of exchange fluctuations to exchange. The same dependence of the magnetic properties upon rare-earth size appears to be important in the case of magnetic-rare-earth atoms; however, the effect of rare-earth--Fe exchange also becomes important and these effects are discussed

  7. Crystallization of an amorphous Fe72Ni9Si8B11 alloy upon laser heating and isothermal annealing

    International Nuclear Information System (INIS)

    Girzhon, V.V.; Smolyakov, A.V.; Yastrebova, T.S.

    2003-01-01

    With the use of methods of x-ray diffraction, resistometric and metallographic analyses specific features of crystallization and phase formation in amorphous alloy Fe 72 Ni 9 Si 8 B 11 are studied under various heating conditions. It is shown that laser heating results in alloy crystallization by an explosive mechanism when attaining a certain density of irradiation power. It is stated that ribbon surface laser heating with simultaneous water cooling of an opposite surface allows manufacturing two-layer amorphous-crystalline structures of the amorphous matrix + α-(Fe, Si) - amorphous matrix type [ru

  8. Amorphous-to-crystalline phase transformation by neutron irradiation of the alloy Fe/sub 83/B/sub 17/

    Energy Technology Data Exchange (ETDEWEB)

    Weis, J.; Gabris, F.; Cerven, I.; Sitek, J. (Slovenska Vysoka Skola Technicka, Bratislava (Czechoslovakia))

    1984-03-01

    The purpose of the present work is to investigate the structural changes of amorphous Fe/sub 83/B/sub 17/ alloy after irradiation with fast neutrons ( > 1 MeV) and to compare with the crystallization behaviour of the amorphous Fe/sub 83/B/sub 17/ alloy after annealing. The structural changes were studied by Moessbauer spectroscopy and X-ray diffraction with the usual Fourier analysis.

  9. Synthesis and characterization of Mg-based amorphous alloys and their use for decolorization of Azo dyes

    International Nuclear Information System (INIS)

    Iqbal, M; Wang, W H

    2014-01-01

    Mg-based alloys are light weight and have wide range of applications in the automotive industry. These alloys are widely used because of their very attractive physical and mechanical properties and corrosion resistance. The properties and applications can be further improved by changing the nature of materials from crystalline to amorphous. In this study, melt spun ribbons (MSRs) of Mg 70 Zn 25 Ca 5 Mg 68 Zn 27 Ca 5 alloys were prepared by melt spinning technique by using 3-4N pure metals. Characterization of the samples was done by X-ray diffraction (XRD), differential scanning calorimetry (DSC) and energy dispersive x-ray analyzer (EDAX). Microstructural investigations were conducted by using scanning electron microscopy (SEM), atomic force microscopy (AFM) as well as optical and stereo scan microscopy techniques. DSC results showed multistage crystallization. Activation energy was found to be 225 kJ/mol by Kissinger method indicating good thermal stability against crystallization. XRD, DSC, SEM and EDS (energy dispersive spectroscopy) results are agreed very well. In order to study decolorization, the MSRs of Mg 70 Zn 25 Ca 5 Mg 68 Zn 27 Ca 5 alloys were treated repeatedly with various azo dyes at room temperature. In order to compare the results, MSRs of amorphous Zr- and Ni-based metallic glasses were also treated. Reaction of MSRs with azo dyes results in their decolorization in a few hours. Decolorization of azo dyes takes place by introducing amorphous MSRs which results in breaking the -N=N- bonds that exist in dye contents. It is concluded that Mg-based alloys are useful for paint and dye industries and will be beneficial to control water pollution. Comparison of results showed that Mg-based alloys are more efficient than Zr- and Ni-based amorphous alloys for decolorization of azo dyes

  10. Crystallization of amorphous phase in niobium alloys with oxygen

    International Nuclear Information System (INIS)

    Dekanenko, V.M.; Samojlenko, Z.A.; Revyakin, A.V.

    1982-01-01

    Crystallization and subsequent phase transformations of amorphous phase during annealings in the system Nb-O are studied. It is shown that quenching from liquid state of niobium alloys with oxygen with a rate of 10 5 -10 6 K/s results in partial crystallization of the melt. Phase transition from amorphous to crystal state at 670 K in all probability takes place without the change of chemical composition. After crystallization the decomposition of oversaturated solid solution on the basis of NbO takes place with the separation of low- temperature modification, γ-Nb 2 O 5 . Niobium pentoxide of both modifications during prolong annealings at 770 K and short- time annealings higher 1070 K disappears completely [ru

  11. Mg amorphous alloys for biodegradable implants; Ligas amorfas de magnesio utilizadas em implantes consumiveis

    Energy Technology Data Exchange (ETDEWEB)

    Danez, G.P., E-mail: gabidanez@hotmail.co [Universidade Federal de Sao Carlos (PPG-CEMUFSCar), SP (Brazil). Programa de Pos-Graduacao em Ciencia e Engenharia de Materiais; Koga, G.Y.; Tonucci, S.; Bolfarini, C.; Kiminami, C.S.; Botta Filho, W.J. [Universidade Federal de Sao Carlos (DEMa/UFSCar), SP (Brazil). Dept. de Engenharia de Materiais

    2010-07-01

    The use of implants made from amorphous alloys magnesium-based with additions of zinc and calcium are promising. Properties such as biocompatibility, low density, high mechanical strength, low modulus (as compared to alloys such as stainless steel and titanium), corrosion resistance and wear resistance make it attractive for use in implants. Moreover, the by-products of corrosion and wear are not toxic and may contribute to fixation. Aiming to understand the tendency of this amorphous ternary (Mg-Zn-Ca) and expand the information about this system, this work involved the use of the topological criterion of instability ({lambda}) and the criterion of electronegativity ({Delta}e) to the choice of compositions. The alloys were processed into wedge-shaped and analyzed structurally and in X-ray diffraction and scanning electron microscopy. (author)

  12. Suppression of photo-leakage current in amorphous silicon thin-film transistors by n-doped nanocrystalline silicon

    International Nuclear Information System (INIS)

    Lin, Hung-Chien; Ho, King-Yuan; Hsu, Chih-Chieh; Yan, Jing-Yi; Ho, Jia-Chong

    2011-01-01

    The reduction of photo-leakage current of amorphous silicon thin-film transistors (a-Si TFTs) is investigated and is found to be successfully suppressed by the use of an n-doped nanocrystalline silicon layer (n+ nc-Si) as an ohmic contact layer. The shallow-level defects of n+ nc-Si can become trapping centres of photo-induced electrons as the a-Si TFT is operated under light illumination. A lower oxygen concentration during n+ nc-Si deposition can increase the creation of shallow-level defects and improve the contrast ratio of active matrix organic light-emitting diode panels.

  13. High speed cinematography of cracks spreading under failure of amorphous metallic alloys

    Energy Technology Data Exchange (ETDEWEB)

    Tabachnikova, E.D.; Golovin, Y.I.; Makarov, M.V. [AN Ukrainskoj SSR, Kharkov (Ukraine). Fiziko-Tekhnicheskij Inst. Nizkikh Temperatur; Shibkov, A.A.

    1997-08-01

    The results of experimental investigation of crack propagation velocity in amorphous alloys are presented. It is shown that there exists some correlation between crack velocity and fracture mode and morphology (orig.). 4 refs.

  14. Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

    International Nuclear Information System (INIS)

    Kim, Hee Joon; Cho, Gyuseong; Choi, Joonhoo; Jung, Kwan-Wook

    2002-01-01

    In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm 2 at -5 V. This high current originates from the high injection current at the p-i junction

  15. Creep of titanium--silicon alloys

    International Nuclear Information System (INIS)

    Paton, N.E.; Mahoney, M.W.

    1976-01-01

    Operative creep mechanisms in laboratory melts of Ti-5Zr-0.5Si and Ti-5Zr-0.5Si have been investigated as a function of microstructure, creep stress, and temperature. From creep rate data and transmission electron microscopy results, it has been shown that an important creep strengthening mechanism at 811 0 K in Si-bearing Ti alloys is clustering of solute atoms on dislocations. All of the alloys investigated showed anomalously high apparent activation energies and areas for creep and a high exponent (n) in the Dorn equation. In addition, the effect of heat treatment was investigated and it is shown that the highest creep strength was obtained by using a heat treatment which retained the maximum amount of silicon in solution. This is consistent with the proposed creep strengthening mechanism. An investigation of the creep behavior of several other Si containing alloys including two commercial alloys, Ti-11 and IMI-685 indicated similar results. 12 fig., 6 tables

  16. First-principles study of the structural and dynamic properties of the liquid and amorphous Li–Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Chiang, Han-Hsin; Kuo, Chin-Lung, E-mail: chinlung@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lu, Jian-Ming [National Center for High-Performance Computing, Tainan 74147, Taiwan (China)

    2016-01-21

    We have performed density functional theory calculations and ab initio molecular dynamics to investigate the structures and dynamic properties of the liquid and amorphous Li{sub x}Si alloys over a range of composition from x = 1.0 − 4.8. Our results show that Si atoms can form a variety of covalently bonded polyanions with diverse local bonding structures in the liquid alloys. Like in c-LiSi, Si atoms can form a continuous bond network in liquid Li{sub 1.0}Si at 1050 K, while it gradually disintegrates into many smaller Si polyanions as the Li content increases in the alloys. The average sizes of Si polyanions in these liquid alloys were found to be relatively larger than those in their crystalline counterparts, which can even persist in the highly lithiated Li{sub 4.81}Si alloy at 1500 K. Our results also show that amorphous Li{sub x}Si alloys have similar local bonding structures but a largely increased short-range order as compared to their liquid counterparts. The differences between the average coordination number of each atomic pair in amorphous solids and that in the liquids are less than 1.1. Furthermore, our calculations reveal that Li and Si atoms can exhibit very distinct dynamic behaviors in the liquids and their diffusivities appear to be largely dependent on the chemical composition of the alloys. The diffusivity of Li was found to increase with the Li content in the alloys primarily because of the reduced interactions between Li and Si atoms, while the Si diffusivity also increases due to the gradual disintegration of the strongly interconnected Si bond network. The diffusivity of Li in amorphous Li{sub x}Si was predicted to lie in the range between 10{sup −7} and 10{sup −9} cm{sup 2}/s at 300 K, which is more than 20-fold larger than that of Si over the composition range considered. Our calculations further show that the diffusivities of both Li and Si can increase by two orders of magnitude as x increases from 1.0 to 3.57 in amorphous Li

  17. Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gusev, Oleg; Bresler, Mikhail; Kuznetsov, Alexey; Kudoyarova, Vera; Pak, Petr; Terukov, Evgenii; Tsendin, Konstantin; Yassievich, Irina [A F Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Fuhs, Walther [Hahn-Meitner Institut, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin (Germany); Weiser, Gerhard [Phillips-Universitat Marburg, Fachbereich Physik, D-35032 Marburg (Germany)

    1998-05-11

    We have observed room-temperature erbium-ion electroluminescence in erbium-doped amorphous silicon. Electrical conduction through the structure is controlled by thermally activated ionization of deep D{sup -} defects in an electric field and the reverse process of capture of mobile electrons by D{sup 0} states. Defect-related Auger excitation (DRAE) is responsible for excitation of erbium ions located close to dangling-bond defects. Our experimental data are consistent with the mechanisms proposed

  18. Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Aparajita [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India); Kole, Arindam, E-mail: erak@iacs.res.in [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India); Dasgupta, Arup [Microscopy and Thermophysical Property Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Chaudhuri, Partha [Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2016-11-30

    Highlights: • Low temperature columnar growth of regular sized Si-quantum dots (Si-QDs) within a-SiC:H/μc-SiC:H multilayer structure by tuning the a-SiC:H layer thickness. • Thickness optimization of the a-SiC:H layers resulted in a sharp increase of the transverse current and a decrease of the trap concentrations. • The arrangements of the Si-QDs favor percolation paths for the transverse current. - Abstract: Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel–Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

  19. High strength nanostructured Al-based alloys through optimized processing of rapidly quenched amorphous precursors.

    Science.gov (United States)

    Kim, Song-Yi; Lee, Gwang-Yeob; Park, Gyu-Hyeon; Kim, Hyeon-Ah; Lee, A-Young; Scudino, Sergio; Prashanth, Konda Gokuldoss; Kim, Do-Hyang; Eckert, Jürgen; Lee, Min-Ha

    2018-01-18

    We report the methods increasing both strength and ductility of aluminum alloys transformed from amorphous precursor. The mechanical properties of bulk samples produced by spark-plasma sintering (SPS) of amorphous Al-Ni-Co-Dy powders at temperatures above 673 K are significantly enhanced by in-situ crystallization of nano-scale intermetallic compounds during the SPS process. The spark plasma sintered Al 84 Ni 7 Co 3 Dy 6 bulk specimens exhibit 1433 MPa compressive yield strength and 1773 MPa maximum strength together with 5.6% plastic strain, respectively. The addition of Dy enhances the thermal stability of primary fcc Al in the amorphous Al-TM -RE alloy. The precipitation of intermetallic phases by crystallization of the remaining amorphous matrix plays important role to restrict the growth of the fcc Al phase and contributes to the improvement of the mechanical properties. Such fully crystalline nano- or ultrafine-scale Al-Ni-Co-Dy systems are considered promising for industrial application because their superior mechanical properties in terms of a combination of very high room temperature strength combined with good ductility.

  20. Evidence of the extended orientational order in amorphous alloys obtained from magnetic measurements

    International Nuclear Information System (INIS)

    Chudnovsky, E.M.; Tejada, J.

    1993-01-01

    Magnetic measurements of R-Fe-B (R = rare earth) amorphous alloys show that magnetic anisotropy axes are correlated on the scale ∼ 100 A. The X-ray study of these materials does not reveal any positional correlations beyond the 10 A scale. These observations support theoretical suggestions that the orientational order in amorphous systems can be much more extended than the positional order. (orig.)

  1. AZO-Ag-AZO transparent electrode for amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Theuring, Martin; Vehse, Martin; Maydell, Karsten von; Agert, Carsten

    2014-01-01

    Metal-based transparent electrodes can be fabricated at low temperatures, which is crucial for various substrate materials and solar cells. In this work, an oxide-metal-oxide (OMO) transparent electrode based on aluminum zinc oxide (AZO) and silver is compared to AZO layers, fabricated at different temperatures and indium tin oxides. With the OMO structure, a sheet resistance of 7.1/square and a transparency above 80% for almost the entire visible spectrum were achieved. The possible application of such electrodes on a textured solar cell was demonstrated on the example of a rough ZnO substrate. An OMO structure is benchmarked in a n-i-p amorphous silicon solar cell against an AZO front contact fabricated at 200 °C. In the experiment, the OMO electrode shows a superior performance with an efficiency gain of 30%. - Highlights: • Multilayer transparent electrode based on aluminum zinc oxide (AZO) and Ag • Comparison of AZO-Ag-AZO transparent electrode to AZO and indium tin oxide • Performance of AZO-Ag-AZO transparent electrodes on textured surfaces • Comparison of amorphous silicon solar cells with different transparent electrodes

  2. Spectral analysis of creep recovery process in finemet type amorphous alloy

    NARCIS (Netherlands)

    Jurikova, A; Csach, K; Miskuf, J; Bengus, VZ; Ocelik, Vaclav

    2002-01-01

    The creep recovery process in Finemet type amorphous alloy leas been analyzed using the method for calculating the relaxation tithe spectra. The influence of structural relaxation and temperature on the spectra shape lags been studied. The creep recovery spectrum of the anelastic deformation of the

  3. A new Ti-Zr-Hf-Cu-Ni-Si-Sn bulk amorphous alloy with high glass-forming ability

    International Nuclear Information System (INIS)

    Huang, Y.J.; Shen, J.; Sun, J.F.; Yu, X.B.

    2007-01-01

    The effect of Sn substitution for Cu on the glass-forming ability was investigated in Ti 41.5 Zr 2.5 Hf 5 Cu 42.5-x Ni 7.5 Si 1 Sn x (x = 0, 1, 3, 5, 7) alloys by using differential scanning calorimetry (DSC) and X-ray diffractometry. The alloy containing 5% Sn shows the highest glass-forming ability (GFA) among the Ti-Zr-Hf-Cu-Ni-Si-Sn system. Fully amorphous rod sample with diameters up to 6 mm could be successfully fabricated by the copper mold casting Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 alloy. The activation energies for glass transition and crystallization for Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 amorphous alloy are both larger than those values for the Sn-free alloy. The enhancement in GFA and thermal stability after the partial replacement of Cu by Sn may be contributed to the strong atomic bonding nature between Ti and Sn and the increasing of atomic packing density. The amorphous Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 alloy also possesses superior mechanical properties

  4. Preparation of rare earth and other metal alloys containing aluminum and silicon

    International Nuclear Information System (INIS)

    Mitchell, A.; Goldsmith, J.R.; Gray, M.

    1981-01-01

    A method is provided for making alloys of aluminum and silicon with a third metal which may be a rare earth or a member of groups 4b, 5b, or 6b of the periodic table. The flux system CaF 2 -CaO-Al 2 O 3 is used as a solvent to provide a reactive medium for the alloy-forming reactions. Aluminum is supplied as a reducing agent, and silicon is added as a sink for the alloying metal. The resulting alloy may be used in steels. (L.L.)

  5. Charged particle detectors made from thin layers of amorphous silicon

    International Nuclear Information System (INIS)

    Morel, J.R.

    1986-05-01

    A series of experiments was conducted to determine the feasibility of using hydrogenated amorphous silicon (α-Si:H) as solid state thin film charged particle detectors. 241 Am alphas were successfully detected with α-Si:H devices. The measurements and results of these experiments are presented. The problems encountered and changes in the fabrication of the detectors that may improve the performance are discussed

  6. Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning

    Science.gov (United States)

    Mueller, Tim; Johlin, Eric; Grossman, Jeffrey C.

    2014-03-01

    Genetic programming is used to identify the structural features most strongly associated with hole traps in hydrogenated nanocrystalline silicon with very low crystalline volume fraction. The genetic programming algorithm reveals that hole traps are most strongly associated with local structures within the amorphous region in which a single hydrogen atom is bound to two silicon atoms (bridge bonds), near fivefold coordinated silicon (floating bonds), or where there is a particularly dense cluster of many silicon atoms. Based on these results, we propose a mechanism by which deep hole traps associated with bridge bonds may contribute to the Staebler-Wronski effect.

  7. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  8. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  9. Moessbauer study of amorphous alloys irradiated with energetic heavy ions

    International Nuclear Information System (INIS)

    Kuzmann, E.; Spirov, I.N.

    1984-01-01

    The Moessbauer spectroscopy was applied to study radiation damages in amorphous alloys irradiated with 40 Ar (E=225 MeV) or 132 Xe (E=120 MeV) ions at room temperature. In the magnetically splitted Moessbauer spectra the dose-dependent decreases of the intensity of the 2nd and 5th lines as well as of the average hyperfine magnetic field were observed. The changes weAe also analysed using the hyperfine field distribution obtained from the spectra. The results are interpreted in terms of defect creation and structural changes of shortrange order of irradiated amorphoys alloys

  10. Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma; Propiedades del a-Si:H depositado utilizando un plasma de microondas

    Energy Technology Data Exchange (ETDEWEB)

    Mejia H, J A

    1997-12-31

    Hydrogenated amorphous silicon (a-Si:H) films have been widely applied to semiconductor devices, such as thin film transistors, solar cells and photosensitive devices. In this work, the first Si-H-Cl alloys (obtained at the National Institute for Nuclear Research of Mexico) were formed by a microwave electron cyclotron resonance (Ecr) plasma CVD method. Gaseous mixtures of silicon tetrachloride (Si Cl{sub 4}), hydrogen and argon were used. The Ecr plasma was generated by microwaves at 2.45 GHz and a magnetic field of 670 G was applied to maintain the discharge after resonance condition (occurring at 875 G). Si and Cl contents were analyzed by Rutherford Backscattering Spectrometry (RBS). It was found that, increasing proportion of Si Cl{sub 4} in the mixture or decreasing pressure, the silicon and chlorine percentages decrease. Optical gaps were obtained by spectrophotometry. Decreasing temperature, optical gap values increase from 1.4 to 1.5 eV. (Author).

  11. Fluxing purification and its effect on magnetic properties of high-B{sub s} FeBPSiC amorphous alloy

    Energy Technology Data Exchange (ETDEWEB)

    Pang, Jing [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang, Liaoning 110870 (China); Wang, Anding, E-mail: anding@nimte.ac.cn [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Center for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong (China); Yue, Shiqiang [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Kong, Fengyu [School of Materials and Chemical Engineering, Ningbo University of Technology, Ningbo 315016 (China); Qiu, Keqiang, E-mail: kqqiu@163.com [School of Materials Science and Engineering, Shenyang University of Technology, Shenyang, Liaoning 110870 (China); Chang, Chuntao; Wang, Xinmin [Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201 (China); Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Liu, Chain-Tsuan, E-mail: chainliu@cityu.edu.hk [Center for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong (China)

    2017-07-01

    Highlights: • Surface crystallization in Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} ribbon was inhibited by flux purification. • Amorphous Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} ribbon was made with industrial process and materials. • The ribbons exhibit high B{sub s} of 1.65 T, low H{sub c} of 2 A/m, and high μ{sub e} of 9.7 × 10{sup 3}. • High melting point inclusions trigger the surface crystallization as nuclei. - Abstract: A high-B{sub s} amorphous alloy with the base composition Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} was used to study the effects of fluxing purification on amorphous forming ability and magnetic properties of the alloy prepared with raw materials in industrialization. By using fluxing purification, the surface crystallization was suppressed and fully amorphous Fe{sub 83}B{sub 11}P{sub 3}Si{sub 2}C{sub 1} ribbons with a maximum thickness of 48 μm were successfully achieved by using an industrial process and materials. The amorphous ribbons made with industrial-purified alloys exhibit excellent magnetic properties, containing high-B{sub s} of 1.65 T, low H{sub c} of 2.0 A/m, and high μ{sub e} of 9.7 × 10{sup 3} at 1 kHz. Impurities in the melting alloys exist in three forms and have different effluences on magnetic properties. The surface crystallization was triggered by the impurities which exist as high melting point inclusions serving as nuclei. Thus, fluxing purification is a feasible way for industrialization of high-B{sub s} FeBPSiC amorphous alloys.

  12. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

    Science.gov (United States)

    Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

    2015-09-01

    We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

  13. Ultralow power continuous-wave frequency conversion in hydrogenated amorphous silicon waveguides.

    Science.gov (United States)

    Wang, Ke-Yao; Foster, Amy C

    2012-04-15

    We demonstrate wavelength conversion through nonlinear parametric processes in hydrogenated amorphous silicon (a-Si:H) with maximum conversion efficiency of -13 dB at telecommunication data rates (10 GHz) using only 15 mW of pump peak power. Conversion bandwidths as large as 150 nm (20 THz) are measured in continuous-wave regime at telecommunication wavelengths. The nonlinear refractive index of the material is determined by four-wave mixing (FWM) to be n(2)=7.43×10(-13) cm(2)/W, approximately an order of magnitude larger than that of single crystal silicon. © 2012 Optical Society of America

  14. Study on the fabrication of silicon nanoparticles in an amorphous silicon light absorbing layer for solar cell applications

    International Nuclear Information System (INIS)

    Park, Joo Hyung; Song, Jin Soo; Lee, Jae Hee; Lee, Jeong Chul

    2012-01-01

    Hydrogenated amorphous-silicon (a-Si:H) thin-film solar cells have advantages of relatively simple technology, less material consumption, higher absorption ratio compared to crystalline silicon, and low cost due to the use of cheaper substrates rather than silicon wafers. However, together with those advantages, amorphous-silicon thin-film solar cells face several issues such as a relatively lower efficiency, a relatively wider bandgap, and the Staebler-Wronski effect (SWE) compared to other competing materials (i.e., crystalline silicon, CdTe, Cu(In x Ga (1-x) )Se 2 (CIGS), etc.). As a remedy for those drawbacks and a way to enhance the cell conversion efficiency at the same time, the employment of crystalline silicon nanoparticles (Si-NPs) in the a-Si matrix is proposed to organize the quantum-dot (QD) structure as the light-absorbing layer. This structure of the light absorbing layer consists of single-crystal Si-NPs in an a-Si:H thin-film matrix. The single-crystal Si-NPs are synthesized by using SiH 4 gas decomposition with CO 2 laser pyrolysis, and the sizes of Si-NPs are calibrated to control their bandgaps. The synthesized size-controlled Si-NPs are directly transferred to another chamber to form a QD structure by using co-deposition of the Si-NPs and the a-Si:H matrix. Transmission electron microscopy (TEM) analyses are employed to verify the sizes and the crystalline properties of the Si-NPs alone and of the Si-NPs in the a-Si:H matrix. The TEM results show successful co-deposition of size-controlled Si-NPs in the a-Si:H matrix, which is meaningful because it suggests the possibility of further enhancement of the a-Si:H solar-cell structure and of tandem structure applications by using a single element.

  15. Local order dynamics: its application to the study of atomic mobility, of point defects in crystalline alloys, and of structural relaxation in amorphous alloys

    International Nuclear Information System (INIS)

    Balanzat, Emmanuel

    1983-01-01

    This research thesis addressed the study of the atomic mobility mechanism and of the atom movement dynamics in the case of crystalline alloys and of amorphous alloys. The first part is based on a previous study performed on an α-Cu 70 -Zn 30 crystalline alloy, and addresses the case of an α-Au 70 -Ni 30 alloy. The specificity of this case relies in the fact that the considered solid solution is metastable and susceptible to de-mixing in the considered temperature range. This case of off-equilibrium crystalline alloy is at the crossroad between steady crystalline alloys and metallic glasses which are studied in the second part. The third part addresses the irradiation of metallic amorphous alloys by fast particles (neutrons or electrons). The author tried to characterise atomic defects induced by irradiation and to compare them with pre-existing ones. He studied how these defects may change atomic mobility, and, more generally, to which extent the impact of energetic particles could modify local order status

  16. Materials and Light Management for High-Efficiency Thin-Film Silicon Solar Cells

    OpenAIRE

    Tan, H.

    2015-01-01

    Direct conversion of sunlight into electricity is one of the most promising approaches to provide sufficient renewable energy for humankind. Solar cells are such devices which can efficiently generate electricity from sunlight through the photovoltaic effect. Thin-film silicon solar cells, a type of photovoltaic (PV) devices which deploy the chemical-vapor-deposited hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon (nc-Si:H) and their alloys as the absorber layers and doped ...

  17. Solid state photochemistry. Subpanel A-2(b): Metastability in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, D. [Solarex Corporation, Newton, PA (United States)

    1996-09-01

    All device quality amorphous silicon based materials exhibit degradation in electronic properties when exposed to sunlight. The photo-induced defects are associated with Si dangling bonds that are created by the recombination and/or trapping of photogenerated carriers. The defects are metastable and can be annealed out at temperatures of about 150 to 200 degrees Centigrade. The density of metastable defects is larger in films that are contaminated with > 10{sup 19} per cubic cm of impurities such as oxygen, carbon and nitrogen. However, recent experimental results indicate that some metastable defects are still present in films with very low impurity concentrations. The photo-induced defects typically saturate after 100 to 1000 hours of exposure to one sun illumination depending on the deposition conditions. There is also experimental evidence that photo-induced structural changes are occurring in the amorphous silicon based materials and that hydrogen may be playing an important role in both the photo-induced structural changes and in the creation of metastable defects.

  18. Electronic Structures Localized at the Boron Atom in Amorphous Fe-B and Fe-B-P Alloys

    Science.gov (United States)

    Yasuda, Hidehiro; Nakayama, Hiroshi; Fujita, Hiroshi

    1989-11-01

    The electronic structures localized at the B in amorphous Fe-B and Fe-B-P alloys and their crystallized alloys were studied by Auger valence electron spectroscopy and the states of solute B are discussed based on the change in the degree of covalent bonding and the charge transfer between the Fe and B atoms. In amorphous phases, the charge transfers from Fe to B above 15at%B where B atoms occupy the substitutionallike situations, and from B to Fe below 15at%B where B atoms occupy the interstitiallike situations. Magnetic properties depend on such states of solute B. In crystalline phases, covalent bonding becomes dominant because the electron excitation occurs to the B2p state. Consequently, amorphous phases are more metallic in character than crystalline phases and amorphous structures are stabilized by a mixture of more than two different bonding states.

  19. Building integration photovoltaic module with reference to Ghana: using triple junction amorphous silicon

    OpenAIRE

    Essah, Emmanuel Adu

    2010-01-01

    This paper assesses the potential for using building integrated photovoltaic (BIPV) \\ud roof shingles made from triple-junction amorphous silicon (3a-Si) for electrification \\ud and as a roofing material in tropical countries, such as Accra, Ghana. A model roof \\ud was constructed using triple-junction amorphous (3a-Si) PV on one section and \\ud conventional roofing tiles on the other. The performance of the PV module and tiles \\ud were measured, over a range of ambient temperatures and solar...

  20. Structural simplicity as a restraint on the structure of amorphous silicon

    Science.gov (United States)

    Cliffe, Matthew J.; Bartók, Albert P.; Kerber, Rachel N.; Grey, Clare P.; Csányi, Gábor; Goodwin, Andrew L.

    2017-06-01

    Understanding the structural origins of the properties of amorphous materials remains one of the most important challenges in structural science. In this study, we demonstrate that local "structural simplicity", embodied by the degree to which atomic environments within a material are similar to each other, is a powerful concept for rationalizing the structure of amorphous silicon (a -Si) a canonical amorphous material. We show, by restraining a reverse Monte Carlo refinement against pair distribution function (PDF) data to be simpler, that the simplest model consistent with the PDF is a continuous random network (CRN). A further effect of producing a simple model of a -Si is the generation of a (pseudo)gap in the electronic density of states, suggesting that structural homogeneity drives electronic homogeneity. That this method produces models of a -Si that approach the state-of-the-art without the need for chemically specific restraints (beyond the assumption of homogeneity) suggests that simplicity-based refinement approaches may allow experiment-driven structural modeling techniques to be developed for the wide variety of amorphous semiconductors with strong local order.

  1. Structure and thermal stability of biodegradable Mg-Zn-Ca based amorphous alloys synthesized by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Datta, Moni Kanchan; Chou, Da-Tren; Hong, Daeho; Saha, Partha [Department of Bioengineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Chung, Sung Jae [Mechanical Engineering and Materials Science, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Lee, Bouen [Department of Bioengineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Sirinterlikci, Arif [Department of Engineering, Robert Morris University, Moon Township, Pittsburgh, PA 15108 (United States); Ramanathan, Madhumati; Roy, Abhijit [Department of Bioengineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Kumta, Prashant N., E-mail: matscib@gmail.com [Department of Bioengineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Mechanical Engineering and Materials Science, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Chemical and Petroleum Engineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); School of Dental Medicine, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Center for Complex Engineered Multifunctional Materials, University of Pittsburgh, Pittsburgh, PA 15261 (United States)

    2011-12-15

    Room temperature solid state diffusion reaction induced by mechanical alloying (MA) of elemental blends of Mg, Zn and Ca of nominal composition 60 at.% Mg-35 at.% Zn-5 at.% Ca has been studied. Formation of fully amorphous structure has been identified after 5 h of MA performed in a SPEX 8000M shaker mill, with milling continued up to 8 h to confirm the formation of homogeneous amorphous phase. Thermal stability of the amorphous phase has been studied using differential scanning calorimetry (DSC) and isothermal heat treatment at different temperatures. The amorphous powder consolidated using cold isostatic pressing (CIP) showed an envelope density {approx}80% of absolute density, which increased to an envelope density {approx}84% of absolute density after sintering at an optimized temperature of {approx}523 K for 9 h. Electrochemical bio-corrosion testing of the CIP compacted amorphous pellet as well as the sintered pellet performed in Dulbecco's Modified Eagle Medium, showed improved corrosion resistance in comparison to the as-cast pure Mg. Cytotoxicity testing of the CIP compacted amorphous pellet, performed using the MTT assay with MC3T3 osteoblastic cells, showed low cytotoxicity in comparison to the as-cast pure Mg.

  2. FDTD simulation of amorphous silicon waveguides for microphotonics applications

    Science.gov (United States)

    Fantoni, A.; Lourenço, P.; Pinho, P.; Vieira, M.,

    2017-05-01

    In this work we correlate the dimension of the waveguide with small variations of the refractive index of the material used for the waveguide core. We calculate the effective modal refractive index for different dimensions of the waveguide and with slightly variation of the refractive index of the core material. These results are used as an input for a set of Finite Difference Time Domain simulation, directed to study the characteristics of amorphous silicon waveguides embedded in a SiO2 cladding. The study considers simple linear waveguides with rectangular section for studying the modal attenuation expected at different wavelengths. Transmission efficiency is determined analyzing the decay of the light power along the waveguides. As far as near infrared wavelengths are considered, a-Si:H shows a behavior highly dependent on the light wavelength and its extinction coefficient rapidly increases as operating frequency goes into visible spectrum range. The simulation results show that amorphous silicon can be considered a good candidate for waveguide material core whenever the waveguide length is as short as a few centimeters. The maximum transmission length is highly affected by the a-Si:H defect density, the mid-gap density of states and by the waveguide section area. The simulation results address a minimum requirement of 300nm×400nm waveguide section in order to keep attenuation below 1 dB cm-1.

  3. Preparation and characterisation of Co–Fe–Ni–M-Si–B (M = Zr, Ti) amorphous powders by wet mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Neamţu, B.V., E-mail: Bogdan.Neamtu@stm.utcluj.ro [Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641, Cluj-Napoca (Romania); Chicinaş, H.F.; Marinca, T.F. [Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641, Cluj-Napoca (Romania); Isnard, O. [Université Grenoble Alpes, Institut NEEL, F-38042, Grenoble (France); CNRS, Institut NEEL, 25 rue des martyrs, BP166, F-38042, Grenoble (France); Chicinaş, I. [Materials Science and Engineering Department, Technical University of Cluj-Napoca, 103-105, Muncii Avenue, 400641, Cluj-Napoca (Romania)

    2016-07-15

    Co-based amorphous alloys were prepared via wet mechanical alloying process starting from elemental powders. The reference alloy Co{sub 70}Fe{sub 4}Ni{sub 2}Si{sub 15}B{sub 9} (at. %) as well as the alloys derived from this composition by the substitution of 5 at.% of Zr or Ti for Si or B (Co{sub 70}Fe{sub 4}Ni{sub 2}Si{sub 15}B{sub 4}Zr{sub 5}, Co{sub 70}Fe{sub 4}Ni{sub 2}Si{sub 15}B{sub 4}Ti{sub 5}, Co{sub 70}Fe{sub 4}Ni{sub 2}Si{sub 10}B{sub 9}Zr{sub 5} and Co{sub 70}Fe{sub 4}Ni{sub 2}Si{sub 10}B{sub 9}Ti{sub 5}) are obtained in amorphous state, according to X-ray diffraction (XRD) investigation, after 40 h of milling. The calculated amount of amorphous fraction reaches 99% after 40 h of milling. The largest increase of the crystallisation temperature was induced by the substitution of Zr or Ti for Si while, regardless of the type of substitution, an important increase of the Curie temperature of the alloy was obtained. A Co-based solid solution, with Co{sub 2}Si and Co{sub 2}B phases, result after crystallisation of the amorphous alloys as proved by XRD investigations. Saturation magnetisation of the alloys decreases upon increasing milling time, however it remains larger than the saturation magnetisation of the reference alloy. This was discussed in correlation with the specificity of the wet mechanical alloying process and the influence of the chemical bonding between Co and metalloids atoms over the magnetic moment of Co. - Highlights: • Co–Fe–Ni–M-Si–B (M = Zr, Ti) amorphous powders were prepared by wet MA. • Amorphisation of the alloy is reached after 40 h of wet MA for any composition. • Magnetisation decrease upon increasing milling time. • Substituting 5% Zr/Ti for Si increases significantly the alloy's thermal stability. • Substitution of 5 at. % Zr/Ti for Si increases the saturation magnetisation by 20%.

  4. Formation of amorphous metal alloys by chemical vapor deposition

    Science.gov (United States)

    Mullendore, A.W.

    1988-03-18

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

  5. Microstructure, soft magnetic properties and applications of amorphous Fe-Co-Si-B-Mo-P alloy

    Science.gov (United States)

    Hasiak, Mariusz; Miglierini, Marcel; Łukiewski, Mirosław; Łaszcz, Amadeusz; Bujdoš, Marek

    2018-05-01

    DC thermomagnetic properties of Fe51Co12Si16B8Mo5P8 amorphous alloy in the as-quenched and after annealing below crystallization temperature are investigated. They are related to deviations in the microstructure as revealed by Mössbauer spectrometry. Study of AC magnetic properties, i.e. hysteresis loops, relative permeability and core losses versus maximum induction was aimed at obtaining optimal initial parameters for simulation process of a resonant transformer for a rail power supply converter. The results obtained from numerical analyses including core losses, winding losses, core mass, and dimensions were compared with the same parameters calculated for Fe-Si alloy and ferrite. Moreover, Steinmetz coefficients were also calculated for the as-quenched Fe51Co12Si16B8Mo5P8 amorphous alloy.

  6. Temperature dependence of the electrical resistivity of amorphous Co80-xErxB20 alloys

    International Nuclear Information System (INIS)

    Touraghe, O.; Khatami, M.; Menny, A.; Lassri, H.; Nouneh, K.

    2008-01-01

    The temperature dependence of the electrical resistivity of amorphous Co 80-x Er x B 20 alloys with x=0, 3.9, 7.5 and 8.6 prepared by melt spinning in pure argon atmosphere was studied. All amorphous alloys investigated here are found to exhibit a resistivity minimum at low temperature. The electrical resistivity exhibits logarithmic temperature dependence below the temperature of resistivity minimum T min . In addition, the resistivity shows quadratic temperature behavior in the interval T min < T<77 K. At high temperature, the electrical resistivity was discussed by the extended Ziman theory. For the whole series of alloys, the composition dependence of the temperature coefficient of electrical resistivity α shows a change in structural short range occurring in the composition range 8-9 at%

  7. Amorphization of Fe-Nb by mechanical alloying

    International Nuclear Information System (INIS)

    Yang, J.Y.; Zhang, T.J.; Cui, K.; Li, X.G.; Zhang, J.

    1996-01-01

    Elemental powder mixtures of Fe x Nb 1-x were mechanically alloyed in a planetary ball mill. Powders milled for different times were characterized by X-ray diffraction, transmission and scanning electron microscopy, differential thermal analysis and microhardness measurement. The results show that powders with 0.30≤x≤0.70 could be amorphized after 30 h milling; the maximum hardness (Hv) of milled Fe 50 Nb 50 powders attained was 1490. Based on a thermodynamical analysis, the glass forming range of the Fe-Nb system was calculated, and found to agree with the experimental result very well. (orig.)

  8. Structural order and magnetism of rare-earth metallic amorphous alloys

    International Nuclear Information System (INIS)

    Maurer, M.

    1984-01-01

    Local symmetry (as evaluated from the electric field gradient tensor) and radial distribution functions (obtained by EXAFS measurement) are determined in a series of amorphous rare-earth base alloys. Local order is found to increase with the extent of heteroatomic interactions. Various magnetic phases (including ferromagnetic, spin-glass, reentrant spin-glass) occur for europium alloys with simple metals (Mg, Zn, Cd, Al, Au, ...). This variety reflects the sensitivity of exchange interactions to the presence of non-s conduction electrons. Asperomagnetic structures are established for the Dy alloys. The crystalline electric field interactions at the Dy 3+ ions are interpreted with the help of local symmetry data. Quadratic axial and non-axial crystal field terms are sufficient and necessary in order to account for the hyperfine and bulk experimental results [fr

  9. X-ray spectroscopy of electronic structure of amorphous silicon and silicyne

    International Nuclear Information System (INIS)

    Mashin, A.I.; Khokhlov, A.F.; Mashin, N.I.; Domashevskaya, Eh.P.; Terekhov, V.A.

    2001-01-01

    SiK β and SiL 23 emission spectra of crystalline silicon (c-Si), amorphous hydrogenated silicon (α-Si:H) and silicyne have been studied by X-ray and ultrasoft X-ray spectroscopy. It is observed that SiL 23 emission spectra of silicyne displays not two maximums, as it usually observed for the c-Si and α-Si:H, but three ones. The third one is seen at high energies near 95.7 eV, and has an intensity about 75%. An additional maximum in the short- wave part of SiK β emission spectrum is observed. This difference of shapes of X-ray spectra between α-Si:H and silicyne is explained by the presence in silicyne a strong π-component of chemical bonds of a silicon atoms in silicyne [ru

  10. A study of the diffusion mechanisms in amorphous metallic alloys: diffusion and diffusion under high pressure in an amorphous NiZr alloy; Contribution a l`etude des mecanismes de transport dans les materiaux metalliques amorphes: diffusion et diffusion sous pression dans NiZr amorphe

    Energy Technology Data Exchange (ETDEWEB)

    Grandjean, A.

    1996-03-01

    The aim of this work is a better understanding of the diffusion mechanism in amorphous metallic alloys. Then interdiffusion and hafnium diffusion in amorphous NiZr alloy have been studied. Samples used are made by sputtering co-deposition under vacuum and are well relaxed before the diffusion measurements. The time evolution of resistivity during annealing due to the decay of a composition modulated film has been measured and from this change in resistivity interdiffusion coefficients have been determined. Dependence of Hf diffusion on temperature and pressure has been studied using (SIMS). In this two cases, the diffusion process obeys an Arrhenius law and gives an activation energy of 1.33 eV for interdiffusion, and 0.76 eV for Hf diffusion. An effect of pressure on Hf diffusion has been found leading to an activation volume of 8.5 angstrom{sup 3}. Thanks to these results, two approaches of the diffusion mechanisms in these systems have been proposed. The first comes from a comparison with the diffusion mechanisms in crystalline metals, that is to say by point defects. The second is an hypothesis of collective motions in these non crystalline alloys. (author).

  11. Summary of structural refinement in hi-silicon aluminium piston alloy with phosphorous as grain refiner

    International Nuclear Information System (INIS)

    Malik, F.A.; Sheikh, S.T.; Choudhry, A.A.

    2003-01-01

    Aluminium Silicon Alloys are extensively used in a wide variety of applications. There are numerous variables in composition, production control, final structure which can influence the mechanical properties of Hi - Silicon Piston alloys. Hypereutectic AlSi alloys develop coarse grain primary silicon crystals, which have a strong negative effect on the tensile strength, the ductility, and the hardness. These crystals slow machining and reduce the tool life considerably. Phosphorous addition produce a fine, evenly spread crystal structure, lamellar structure of the silicon changes into a granular structure. (author)

  12. Digital chest radiography with an amorphous silicon flat-panel-detector versus a storage-phosphor system: comparison of soft-copy images

    International Nuclear Information System (INIS)

    Lee, Hyun Ju; Im, Jung Gi; Goo, Jin Mo; Lee, Chang Hyun

    2006-01-01

    We compared the soft-copy images produced by an amorphous silicon flat-panel-detector system with the images produced by a storage-phosphor radiography system for their ability to visualize anatomic regions of the chest. Two chest radiologists independently analyzed 234 posteroanterior chest radiographs obtained from 78 patients on high-resolution liquid crystal display monitors (2560 x 2048 x 8 bits). In each patient, one radiograph was obtained with a storage-phosphor system, and two radiographs were obtained via amorphous silicon flat-panel-detector radiography with and without spatial frequency filtering. After randomizing the 234 images, the interpreters rated the visibility and radiographic quality of 11 different anatomic regions. Each image was ranked on a five-point scale (1 = not visualized, 2 = poor visualization, 3 = fair visualization, 4 = good visualization, and 5 = excellent visualization). The statistical difference between each system was determined using the Wilcoxon's signed rank test. The visibility of three anatomic regions (hilum, heart border and ribs), as determined by the chest radiologist with 14 years experience (ρ < 0.05) and the visibility of the thoracic spine, as determined by the chest radiologist with 8 years experience (ρ = 0.036), on the amorphous silicon flat-panel-detector radiography prior to spatial frequency filtering were significantly superior to that on the storage-phosphor radiography. The visibility of 11 anatomic regions, as determined by the chest radiologist with 14 years experience (ρ < 0.0001) and the visibility of five anatomic regions (unobscured lung, rib, proximal airway, thoracic spine and overall appearance), as determined by the chest radiologist with 8 years experience (ρ < 0.05), on the amorphous silicon flat-panel-detector radiography after spatial frequency filtering were significantly superior to that on the storage-phosphor radiography. The amorphous silicon flat-panel-detector system depicted the

  13. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    International Nuclear Information System (INIS)

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-01-01

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n + -type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force

  14. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    Energy Technology Data Exchange (ETDEWEB)

    Mouro, J.; Gualdino, A.; Chu, V. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Conde, J. P. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Department of Bioengineering, Instituto Superior Técnico (IST), 1049-001 Lisbon (Portugal)

    2013-11-14

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  15. Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A., E-mail: antonio.ferrando@ciemat.e [CIEMAT, Madrid (Spain); Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, Madrid (Spain); Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain)

    2010-12-01

    This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90{sup o} using a pentaprism.

  16. Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

    International Nuclear Information System (INIS)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L.

    2010-01-01

    This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90 o using a pentaprism.

  17. Geometric photovoltaics applied to amorphous silicon thin film solar cells

    Science.gov (United States)

    Kirkpatrick, Timothy

    Geometrically generalized analytical expressions for device transport are derived from first principles for a photovoltaic junction. Subsequently, conventional planar and unconventional coaxial and hemispherical photovoltaic architectures are applied to detail the device physics of the junction based on their respective geometry. For the conventional planar cell, the one-dimensional transport equations governing carrier dynamics are recovered. For the unconventional coaxial and hemispherical junction designs, new multi-dimensional transport equations are revealed. Physical effects such as carrier generation and recombination are compared for each cell architecture, providing insight as to how non-planar junctions may potentially enable greater energy conversion efficiencies. Numerical simulations are performed for arrays of vertically aligned, nanostructured coaxial and hemispherical amorphous silicon solar cells and results are compared to those from simulations performed for the standard planar junction. Results indicate that fundamental physical changes in the spatial dependence of the energy band profile across the intrinsic region of an amorphous silicon p-i-n junction manifest as an increase in recombination current for non-planar photovoltaic architectures. Despite an increase in recombination current, however, the coaxial architecture still appears to be able to surpass the efficiency predicted for the planar geometry, due to the geometry of the junction leading to a decoupling of optics and electronics.

  18. Thermodynamic assessment and the composition prediction of amorphous alloy in the Fe–B–Er alloy system

    International Nuclear Information System (INIS)

    Wang, S.L.; Han, J.J.; Wang, C.P.; Kou, S.Z.; Liu, X.J.

    2012-01-01

    Highlights: ► The thermodynamic parameters of each phase in the Fe–Er and B–Er binary systems were obtained. ► An agreement between the calculated results and experimental data was obtained in each binary system. ► The liquidus surface of Fe–B–Er system has been calculated by means of CALPHAD. ► The investigation of GFA in Fe-rich alloys in the context of Fe–B–Er liquidus surface proves the significance of calculated phase diagram in the composition design of Fe-based metallic glass. - Abstract: The phase diagrams and thermodynamic properties in the Fe–Er and B–Er binary systems have been assessed by using the CALPHAD (Calculation of Phase Diagrams) method on the basis of the experimental data including the thermodynamic properties and phase equilibria. The thermodynamic parameters of each phase in the Fe–Er and B–Er binary systems were obtained, and an agreement between the calculated results and experimental data was obtained in each binary system. The isothermal sections at different temperatures and liquidus surface in the Fe–B–Er system have been calculated based on the binary thermodynamic data assessed in the present work. In addition, by considering that the glass formation composition of amorphous alloy is closely relative to the eutectic point in corresponding phase diagram, the investigation of glass-forming ability (GFA) in Fe-rich alloys in the Fe–B–Er liquidus surface has also been implemented in this work. The experimental result indicates that the GFA of a certain alloy is intimately relative to its location in the phase diagram, which proves that the phase diagram is an efficient tool for the composition design of Fe-based amorphous alloy.

  19. Coercivity and induced magnetic anisotropy by stress and/or field annealing in Fe- and Co- based (Finemet-type) amorphous alloys

    International Nuclear Information System (INIS)

    Miguel, C.; Zhukov, A.; Val, J.J. del; Gonzalez, J.

    2005-01-01

    Uniaxial magnetic anisotropy has been induced in amorphous Fe 73.5 Cu 1 Nb 3 Si 15.5 B 7 (Fe-rich) and (Co 77 Si 13.5 B 9.5 ) 90 Fe 7 Nb 3 (Co-rich) ferromagnetic alloys by annealing under stress and/or magnetic field. Such anisotropy plays a crucial role on the magnetization process and, consequently, determine the future applications of these materials. The mechanisms involved on the origin of such induced magnetic anisotropy showed significant differences between Fe-rich and Co-rich amorphous alloys. This work provides a comparative study of the coercive field and induced magnetic anisotropy in Fe-rich and Co-rich (Finemet) amorphous alloys treated by stress and/or field

  20. Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

    Science.gov (United States)

    Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

    2017-02-01

    In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

  1. Alloyed Aluminum Contacts for Silicon Solar Cells

    International Nuclear Information System (INIS)

    Tin Tin Aye

    2010-12-01

    Aluminium is usually deposited and alloyed at the back of p-p silicon solar cell for making a good ohmic contact and establishing a back electric field which avoids carrier recombination of the back surface. It was the deposition of aluminum on multicrystalline silicon (mc-Si) substrate at various annealing temperature. Physical and elemental analysis was carried out by using scanning electron microscopy (SEM) and X-rays diffraction (XRD). The electrical (I-V) characteristic of the photovoltaic cell was also measured.

  2. Effect of boron addition to the hard magnetic bulk Nd60Fe30Al10 amorphous alloy

    International Nuclear Information System (INIS)

    Kong, H.Z.; Li, Y.; Ding, J.

    2000-01-01

    A detailed study of the effect of boron addition to crystallinity, magnetic properties and thermal properties was carried out for alloys Nd 60-x Fe 30 Al 10 B x with x=0, 1, 3 and 5 produced by copper mold chill casting and melt-spinning. The cast rods of alloys Nd 60-x Fe 30 Al 10 B x were largely amorphous. Remanence up to 0.154 T and coercivity up to 355 kA/m were observed, which were higher than those of the bulk amorphous Nd 60 Fe 30 Al 10 rod of the same diameter. A step in hysteresis loop was observed for the hard magnetic cast rod and ribbon melt-spun at a low speed of 5 m/s of the alloys with boron addition. Consistent increase in the amplitude of the step and magnetic field (H) at which the step was observed as the boron content increased. A single magnetic phase with low coercivity was observed for fully amorphous ribbon melt-spun at high speed of 30 m/s. Full crystallization due to heat treatment resulted in transition of hard magnetic amorphous phase of Nd 55 Fe 30 Al 10 B 5 cast rod to paramagnetic crystalline phases. TEM results of the as-cast rods illustrated the existence of numerous minute Nd-crystallites in amorphous matrix

  3. Microstructure, soft magnetic properties and applications of amorphous Fe-Co-Si-B-Mo-P alloy

    Directory of Open Access Journals (Sweden)

    Mariusz Hasiak

    2018-05-01

    Full Text Available DC thermomagnetic properties of Fe51Co12Si16B8Mo5P8 amorphous alloy in the as-quenched and after annealing below crystallization temperature are investigated. They are related to deviations in the microstructure as revealed by Mössbauer spectrometry. Study of AC magnetic properties, i.e. hysteresis loops, relative permeability and core losses versus maximum induction was aimed at obtaining optimal initial parameters for simulation process of a resonant transformer for a rail power supply converter. The results obtained from numerical analyses including core losses, winding losses, core mass, and dimensions were compared with the same parameters calculated for Fe-Si alloy and ferrite. Moreover, Steinmetz coefficients were also calculated for the as-quenched Fe51Co12Si16B8Mo5P8 amorphous alloy.

  4. Magnetic and other properties and sputtering behavior of Co-base amorphous alloy films

    International Nuclear Information System (INIS)

    Hayashi, K.; Hayakawa, M.; Ochiai, Y.; Matsuda, H.; Ishikawa, W.; Iwasaki, Y.; Aso, K.

    1987-01-01

    Magnetic and other properties of Co-base amorphous alloy films prepared by sputtering are investigated. A detailed magnetic phase diagram with saturation magnetic flux density, crystallization temperature, and zero-magnetostrictive line on Co-Ta-Zr amorphous alloys were obtained, and the technical knowhow to make a film with well-reproducible characteristics by widely changing the sputtering conditions was related with these physical properties. Especially on alloy sputtering, a phenomenological model for elucidating a composition difference between film and target is presented. After these studies, the film characteristics of B/sub s/ = 12 kG, T/sub x/ = 450 0 C, chemical bondλ/sub s/chemical bond -8 , H/sub c/<10 mOe, and permeabilities of μ(1 MHz) = 7000, μ(100 MHz) = 2000 for the single film of 2 μm in thickness and of μ(1 MHz) = 4000, μ(100 MHz) = 800 for the insulator-sandwiched multilayered film of 10 μm are obtained, and these well-balanced values enable us to apply the materials for high-frequency recording head

  5. Thermodynamic Properties of Alloys of Iron and Silicon

    International Nuclear Information System (INIS)

    Vecher, R.A.; Gejderih, V.A.; Gerasimov, Ja.I.

    1966-01-01

    The Fe-Si phase diagram is complex. At 1000°K there are FeSi 2 (β) and FeSi phases and solid solutions of silicon in α and α' iron. EMF measurements were made on the electrochemical cells: Fe|Fe 2+ , KI + Nal|Fe-Si at 600-800°C molten The alloys were prepared from particularly pure components by powder metallurgy and protracted annealing. Studies were made of ten alloys with silicon content between 85 and 4% in all the phase fields in the diagram section at 1000°K. We calculated the integral thermodynamic quantities ΔG, ΔH and ΔS for the formation of the silicides FeSi 2 (β), FeSi and Fe 3 Si at the mean temperature for the experimental range (1000°K), and also (using the thermal capacity of the silicides, the iron and the silicon) at 298, 1188 and 1798°K. The heats of formation of the silicides mentioned at 298°K (kcal/mole) are -19.4, -17.6 and -22.4 respectively. The data existing in the literature enable us to calculate the heat of formation of FeSi 2.33 (α-leboite) at 298°K and this is found to be -14.4 kcal/mole. The heats calculated by us are 1.5-3 kcal higher than the experimental values of Corber and Olsen. The heats of mixing calculated by us for liquid alloys agree well with data in the literature. The data obtained can be regarded as due to the change in the character of the bond in silicides from metallic to covalent when the silicon content is increased. From the data for alloy solutions of silicon in a-iron, the iron activities were calculated. It was found that the α ⇌ α' transformation observed is a real phase transformation. The two-phase range is wider than shown in the phase diagram (from data in the literature). Conversion of the iron activities in solid solution to liquid solution gives good agreement with the data of Chipman. (author) [fr

  6. Thermal stability and glass-forming ability of amorphous Nd-Al-TM (TM=Fe, Co, Ni or Cu) alloys

    International Nuclear Information System (INIS)

    Inoue, A.; Zhang Tao

    1997-01-01

    Bulk amorphous alloys were prepared for Nd 70 Al 10 TM 20 and Nd 60 Al 10 TM 30 (TM=Fe or Co) alloys by copper mold casting. The maximum sample thickness for glass formation reaches 15 mm for the Nd-Al-Fe alloys and 5 mm for the Nd-Al-Co alloys. A significant difference in the phase transition upon heating is recognized between the Fe- and Co-containing alloys. No glass transition before crystallization is observed for the Nd-Al-Fe alloys, but the Nd-Al-Co alloys exhibit the glass transition. The ΔT x (=T x -T g ) and T g /T m are 40-55 K and 0.65-0.67, respectively, for the latter alloys. The absence of supercooled liquid for the former alloys is different from those for all bulk amorphous alloys reported up to date. The T x /T m and ΔT m (=T m -T x ) are 0.85-0.89 and 88-137 K, respectively, for the Nd-Al-Fe alloys and, hence, the large glass-forming ability is presumably due to the high T x /T m and small ΔT m values. (orig.)

  7. Electric charging/discharging characteristics of super capacitor, using de-alloying and anodic oxidized Ti-Ni-Si amorphous alloy ribbons.

    Science.gov (United States)

    Fukuhara, Mikio; Sugawara, Kazuyuki

    2014-01-01

    Charging/discharging behaviors of de-alloyed and anodic oxidized Ti-Ni-Si amorphous alloy ribbons were measured as a function of current between 10 pA and 100 mA, using galvanostatic charge/discharging method. In sharp contrast to conventional electric double layer capacitor (EDLC), discharging behaviors for voltage under constant currents of 1, 10 and 100 mA after 1.8 ks charging at 100 mA show parabolic decrease, demonstrating direct electric storage without solvents. The supercapacitors, devices that store electric charge on their amorphous TiO2-x surfaces that contain many 70-nm sized cavities, show the Ragone plot which locates at lower energy density region near the 2nd cells, and RC constant of 800 s (at 1 mHz), which is 157,000 times larger than that (5 ms) in EDLC.

  8. X-ray spectroscopy of electronic structure of amorphous silicon and silicyne

    CERN Document Server

    Mashin, A I; Mashin, N I; Domashevskaya, E P; Terekhov, V A

    2001-01-01

    SiK subbeta and SiL sub 2 sub 3 emission spectra of crystalline silicon (c-Si), amorphous hydrogenated silicon (alpha-Si:H) and silicyne have been studied by X-ray and ultrasoft X-ray spectroscopy. It is observed that SiL sub 2 sub 3 emission spectra of silicyne displays not two maximums, as it usually observed for the c-Si and alpha-Si:H, but three ones. The third one is seen at high energies near 95.7 eV, and has an intensity about 75%. An additional maximum in the short- wave part of SiK subbeta emission spectrum is observed. This difference of shapes of X-ray spectra between alpha-Si:H and silicyne is explained by the presence in silicyne a strong pi-component of chemical bonds of a silicon atoms in silicyne

  9. Amorphous Silicon-Germanium Films with Embedded Nano crystals for Thermal Detectors with Very High Sensitivity

    International Nuclear Information System (INIS)

    Calleja, C.; Torres, A.; Rosales-Quintero, P.; Moreno, M.

    2016-01-01

    We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nano crystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (micro bolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9%K -1 ). Our results show that amorphous silicon-germanium films with embedded nano crystals can be used as thermo sensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.

  10. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  11. Amorphous magnetism in Mnx Sn1-x alloys

    International Nuclear Information System (INIS)

    Drago, V.; Saitovitch, E.M.B.; Abd-Elmeguid, M.M.

    1988-01-01

    Systematic low temperature in situ 119 Sn Moessbauer effect (ME) studies in vapor quenched amorphous Mn x Sn 1-x (0.09≤ x ≤0,95) alloys between 150 and 4.2 K, are presented. Its is shown that the magnetic behavior of the system is correctly displayed by the transferred magnetic hyperfine (hf) interactions, at the 119 Sn site. A complete magnetic phase diagram is proposed, and the effect of an external magnetic field (up to about 3T) on the spin correlations in the spin-glass state is also discussed. (author) [pt

  12. Parametric Study of Amorphous High-Entropy Alloys formation from two New Perspectives: Atomic Radius Modification and Crystalline Structure of Alloying Elements

    Science.gov (United States)

    Hu, Q.; Guo, S.; Wang, J. M.; Yan, Y. H.; Chen, S. S.; Lu, D. P.; Liu, K. M.; Zou, J. Z.; Zeng, X. R.

    2017-01-01

    Chemical and topological parameters have been widely used for predicting the phase selection in high-entropy alloys (HEAs). Nevertheless, previous studies could be faulted due to the small number of available data points, the negligence of kinetic effects, and the insensitivity to small compositional changes. Here in this work, 92 TiZrHfM, TiZrHfMM, TiZrHfMMM (M = Fe, Cr, V, Nb, Al, Ag, Cu, Ni) HEAs were prepared by melt spinning, to build a reliable and sufficiently large material database to inspect the robustness of previously established parameters. Modification of atomic radii by considering the change of local electronic environment in alloys, was critically found out to be superior in distinguishing the formation of amorphous and crystalline alloys, when compared to using atomic radii of pure elements in topological parameters. Moreover, crystal structures of alloying element were found to play an important role in the amorphous phase formation, which was then attributed to how alloying hexagonal-close-packed elements and face-centered-cubic or body-centered-cubic elements can affect the mixing enthalpy. Findings from this work not only provide parametric studies for HEAs with new and important perspectives, but also reveal possibly a hidden connection among some important concepts in various fields.

  13. Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture application type thin film solar cells with new structure (development of technologies to manufacture amorphous silicon and thin film poly-crystal silicon hybrid thin film solar cells); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Research and development was performed with an objective to manufacture amorphous silicon and thin film poly-crystal silicon hybrid solar cells with large area and at low cost, being a high-efficiency next generation solar cell. The research was performed based on a principle that low-cost substrates shall be used, that a manufacturing process capable of forming amorphous silicon films with large area shall be based on, and that silicon film with as thin as possible thickness shall be used. Fiscal 1997 has started research and development on making the cells hybrid with amorphous silicon cells. As a result of the research and development, such achievements have been attained as using texture structure on the rear layer in thin poly-crystal silicon film solar cells with a thickness of two microns, and having achieved conversion efficiency of 10.1% by optimizing the junction interface forming conditions. A photo-deterioration test was carried out on hybrid cells which combine the thin poly-crystal silicon film cells having STAR structure with the amorphous silicon cells. Stabilization efficiency of 11.5% was attained after light has been irradiated for 500 hours or longer. (NEDO)

  14. A simple fluxgate magnetometer using amorphous alloys

    International Nuclear Information System (INIS)

    Ghatak, S.K.; Mitra, A.

    1992-01-01

    A simple fluxgate magnetometer is developed using low magnetostrictive ferromagnetic amorphous alloy acting as a sensing element. It uses the fact that the magnetization of sensing element symmetrically magnetized by a sinusoidal field contains even harmonic components in presence of dc signal field H and the amplitude of the second harmonic component of magnetization is proportional to H. The sensitivity and linearity of the magnetometer with signal field are studied for parallel configuration and the field ranging from 10 nT to 10 μT can be measured. The functioning of the magnetometer is demonstrated by studying the shielding and flux-trapping phenomena in high-Tc superconductor. (orig.)

  15. Simulation and experimental analysis of nanoindentation and mechanical properties of amorphous NiAl alloys.

    Science.gov (United States)

    Wang, Chih-Hao; Fang, Te-Hua; Cheng, Po-Chien; Chiang, Chia-Chin; Chao, Kuan-Chi

    2015-06-01

    This paper used numerical and experimental methods to investigate the mechanical properties of amorphous NiAl alloys during the nanoindentation process. A simulation was performed using the many-body tight-binding potential method. Temperature, plastic deformation, elastic recovery, and hardness were evaluated. The experimental method was based on nanoindentation measurements, allowing a precise prediction of Young's modulus and hardness values for comparison with the simulation results. The indentation simulation results showed a significant increase of NiAl hardness and elastic recovery with increasing Ni content. Furthermore, the results showed that hardness and Young's modulus increase with increasing Ni content. The simulation results are in good agreement with the experimental results. Adhesion test of amorphous NiAl alloys at room temperature is also described in this study.

  16. Comparison of the nonradiative deep levels in silicon solar cells made of monocrystalline, polycrystalline and amorphous silicon using deep level transient spectroscopy (DLTS)

    International Nuclear Information System (INIS)

    Hammadeh, H.; Darwich, R.

    2005-03-01

    The aim of this work is to study the defects in solar cells fabricated from crystalline, polycrystalline and amorphous silicon. Using Deep Level Transient Spectroscopy technique, (DLTS), we have determined their activation energies, concentrations and their effect on the solar cell efficiency. Our results show a DLTS peak in crystalline silicon which we could attribute to tow peaks originating from iron contamination. In the polycrystalline based solar cells we observed a series of non conventional DLTS peaks while in amorphous silicon we observed a peak using low measurement frequencies (between 8 kHz and 20 kHz). We studied these defects and determined their activation energies as well as the capture cross section for one of them. We suggest a possible configuration of these defects. We cannot able to study the effect of these defects on the solar cell efficiency because we have not the experimental set-up which measure the solar cell efficiency. (Authors)

  17. A new Ti-Zr-Hf-Cu-Ni-Si-Sn bulk amorphous alloy with high glass-forming ability

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Y.J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Shen, J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)]. E-mail: junshen@hit.edu.cn; Sun, J.F. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yu, X.B. [Lab of Energy Science and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)]. E-mail: yuxuebin@hotmail.com

    2007-01-16

    The effect of Sn substitution for Cu on the glass-forming ability was investigated in Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 42.5-x}Ni{sub 7.5}Si{sub 1}Sn {sub x} (x = 0, 1, 3, 5, 7) alloys by using differential scanning calorimetry (DSC) and X-ray diffractometry. The alloy containing 5% Sn shows the highest glass-forming ability (GFA) among the Ti-Zr-Hf-Cu-Ni-Si-Sn system. Fully amorphous rod sample with diameters up to 6 mm could be successfully fabricated by the copper mold casting Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} alloy. The activation energies for glass transition and crystallization for Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} amorphous alloy are both larger than those values for the Sn-free alloy. The enhancement in GFA and thermal stability after the partial replacement of Cu by Sn may be contributed to the strong atomic bonding nature between Ti and Sn and the increasing of atomic packing density. The amorphous Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} alloy also possesses superior mechanical properties.

  18. Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Kalay, Yunus Eren [Iowa State Univ., Ames, IA (United States)

    2009-01-01

    Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T0 curves, which makes Al-Si a good candidate for solubility extension while the plunging T0 line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 {micro}m with a Peclet number of ~0.2, JH and TMK deviate from

  19. Processing and characterization of amorphous magnesium based alloy for application in biomedical implants

    Directory of Open Access Journals (Sweden)

    Telma Blanco Matias

    2014-07-01

    Full Text Available Magnesium-based bulk metallic glasses are attractive due to their single-phase, chemically homogeneous alloy system and the absence of second-phase, which could impair the mechanical properties and corrosion resistance. However, one of the unsolved problems for the manufacturability and the applications of bulk metallic glasses is that their glass-forming ability is very sensitive to the preparation techniques and impurity of components since oxygen in the environment would markedly deteriorate the glass-forming ability. Therefore, the aim of this study was to establish proper processing conditions to obtain a magnesium-based amorphous ternary alloy and its characterization. The final composition was prepared using two binary master alloys by melting in an induction furnace. Carbon steel crucible was used in argon atmosphere with and without addition of SF6 gas in order to minimize the oxygen contamination. The microstructure, amorphous nature, thermal properties and chemical analysis of samples were investigated by scanning electron microscopy (SEM, X-ray diffraction (XRD, differential scanning calorimetry (DSC and inductively coupled plasma emission spectrometry, respectively. The oxygen content of the as-cast samples was chemically analyzed by using carrier gas hot extraction (O/N Analyzer TC-436/LECO and was kept bellow 25 ppm (without SF6 and 10 ppm (with SF6. Bulk samples were produced by rapid cooling in a cooper mold until 1.5 mm thickness, with amorphous structures being observed up to 2.5 mm.

  20. Short-range order in ab initio computer generated amorphous and liquid Cu–Zr alloys: A new approach

    International Nuclear Information System (INIS)

    Galván-Colín, Jonathan; Valladares, Ariel A.; Valladares, Renela M.; Valladares, Alexander

    2015-01-01

    Using ab initio molecular dynamics and a new approach based on the undermelt-quench method we generated amorphous and liquid samples of Cu x Zr 100−x (x=64, 50, 36) alloys. We characterized the topology of our resulting structures by means of the pair distribution function and the bond-angle distribution; a coordination number distribution was also calculated. Our results for both amorphous and liquids agree well with experiment. Dependence of short-range order with the concentration is reported. We found that icosahedron-like geometry plays a major role whenever the alloys are Cu-rich or Zr-rich disregarding if the samples are amorphous or liquid. The validation of these results, in turn would let us calculate other properties so far disregarded in the literature

  1. Crystallographic orientation-spray formed hypereutectic aluminium-silicon alloys

    Directory of Open Access Journals (Sweden)

    Hamilta de Oliveira Santos

    2005-06-01

    Full Text Available Aluminium-silicon alloys have been wide accepted in the automotive, electric and aerospace industries. Preferred orientation is a very common condition for metals and alloys. Particularly, aluminium induces texture during the forming process. The preparation of an aggregate with completely random crystal orientation is a difficult task. The present work was undertaken to analyse the texture by X-ray diffraction techniques, of three spray formed hypereutectic Al-Si alloys. Samples were taken from a billet of an experimental alloy (alloy 1 and were subsequently hot-rolled and cold-rolled (height reduction, 72% and 70%, respectively. The other used samples, alloys 2 and 3, were taken from cylinders liners. The results from the Laue camera showed texture just in the axial direction of alloy 3. The pole figures also indicated the presence of a typical low intensity deformation texture, especially for alloy 3. The spray formed microstructure, which is very fine, hinders the Al-Si texture formation during mechanical work.

  2. In-situ determination of electronic surface and volume defect density of amorphous silicon (a-Si:H) and silicon alloys

    International Nuclear Information System (INIS)

    Siebke, F.

    1992-07-01

    The density of localized gap states in the bulk and in the near-surface region of amorphous hydrogenated silicon (a-Si:H) was measured for non oxidized undoped, B-doped and P-doped samples as well as for films with low carbon (C) and germanium (Ge) content. Also the influence of light soaking on the bulk and surface density of states was investigated. The samples were prepared by rf glow discharge in an UHV-system at substrate temperatures between 100degC and 400degC and transferred to the analysis chamber by a vacuum lock. We combined the constant photocurrent method (CPM) and the total-yield photoelectron spectroscopy (TY) to obtain in-situ information about the defect densities. While the first method yields information about the density of states in the bulk, the other method obtains the density of occupied states in the near-surface region. The mean information depth of the TY-measurements is limited by the escape lenght of photoelectrons and can be estimated to 5 nm. In addition to the defect density the position of the Fermi energy was determined for the bulk by dark conductivity measurements and at the surface using a calibrated Kelvin probe. (orig.)

  3. Boron profiles in doped amorphous-silicon solar cells formed by plasma ion deposition

    International Nuclear Information System (INIS)

    Stoddart, C.T.H.; Hunt, C.P.; Coleman, J.H.

    1979-01-01

    Amorphous silicon p-n junction solar cells of large area (100 cm 2 ) and having a quantum efficiency approaching 100% in the blue region have been prepared by plasma ion-plating, the p layer being formed from diborane and silane gases in a cathode glow-discharge. Surface secondary ion mass spectrometry combined with ion beam etching was found to be a very sensitive method with high in-depth resolution for obtaining the initial boron-silicon profile of the solar cell p-n junction. (author)

  4. In vitro metal ion release and biocompatibility of amorphous Mg{sub 67}Zn{sub 28}Ca{sub 5} alloy with/without gelatin coating

    Energy Technology Data Exchange (ETDEWEB)

    Chan, W.Y., E-mail: chan.wing.yue@sgh.com.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore); Department of Plastic, Reconstructive and Aesthetic Surgery, Singapore General Hospital (Singapore); Chian, K.S.; Tan, M.J. [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore)

    2013-12-01

    Amorphous zinc-rich Mg–Zn–Ca alloys have exhibited good tissue compatibility and low hydrogen evolution in vivo. However, suboptimal cell–surface interaction on magnesium alloy surface observed in vitro could lead to reduced integration with host tissue for regenerative purpose. This study aims to improve cell–surface interaction of amorphous Mg{sub 67}Zn{sub 28}Ca{sub 5} alloy by coating a gelatin layer by electrospinning. Coated/uncoated alloys were immersed and extracted for 3 days under different CO{sub 2}. The immersion results showed that pH and metal ion release in the alloy extracts were affected by gelatin coating and CO{sub 2}, suggesting their roles in alloy biocorrosion and a mechanism has been proposed for the alloy–CO{sub 2} system with/without coating. Cytotoxicity results are evident that gelatin-coated alloy with 2-day crosslinking not only exhibited no indirect cytotoxicity, but also supported attachment of L929 and MG63 cell lines around/on the alloy with high viability. Therefore, amorphous Mg{sub 67}Zn{sub 28}Ca{sub 5} alloy coated with gelatin by electrospinning technique provides a useful method to improve alloy biocompatibility. - Highlights: • Electrospinning is a new method to coat amorphous Mg{sub 67}Zn{sub 28}Ca{sub 5} alloy with gelatin. • Gelatin-coated alloy has differential effect on pH and ion release at various CO{sub 2}. • L929 cell proliferation correlates with Mg{sup 2+} level in alloy extracts. • Biomimetic gelatin coating significantly improves cell–surface interaction.

  5. High-resolution transmission electron microscopy of grain-refining particles in amorphous aluminum alloys

    International Nuclear Information System (INIS)

    Schumacher, P.; Greer, A.L.

    1996-01-01

    The nucleation mechanism of Al-Ti-B grain refiners is studied in an Al-based amorphous alloy. The ability to limit growth of α-Al in the amorphous alloy permits the microscopical observation of nucleation events on boride particles. Earlier studies of this kind are extended by using high-resolution electron microscopy. This shows that the efficient nucleation α-Al depends on the TiB 2 particles being coated with a thin layer of Al 3 Ti, which can form only when there is some excess titanium in the melt. The aluminide layer, stabilized by adsorption effects, can be as little as a few monolayers thick, and is coherent with the boride. The nature of this layer, and its importance for the nucleation mechanism are discussed. The fading of the grain refinement action is also considered

  6. Oxidation influence on crystallisation in iron-based amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gloriant, T.; Surinach, S.; Munoz, J.S.; Baro, M.D. [Universitat Autonoma de Barcelona (Spain). Dept. de Fisica; Inoue, A. [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

    2001-07-01

    The partially crystalline iron-based nanophase composites elaborated by rapid solidification techniques are very attractive for their excellent soft magnetic properties and their potential for industrial applications. In these nanocomposite materials a control of both the structure (size, shape and distribution of the nanoparticles in the amorphous matrix) and the kinetic behaviour (nucleation and growth mechanism) is essential in order to obtain the best properties and to be able to produce them at the industrial scale. Our group has been working in this research area for a long time and the investigation presented here is the result of an international collaboration. This study deals with the effect of cobalt addition in Fe-Nb-B melt-spun amorphous alloys on the devitrification/crystallisation processes induced by thermal treatments and characterised by X-ray diffraction analysis (XRD), thermomagnetic analysis (TMG) and transmission electron microscopy observations (TEM). The transformation sequences, from the initial amorphous phase to the fully crystallised final state, were carried out using different annealing experiments (under vacuum and in air) and have revealed a strong influence of the environmental atmosphere during devitrification. It is shown that oxidation can greatly affect the crystallisation behaviour as a result of the high metastable state of the initial amorphous phase. The results and observations of this phenomenon will be presented. (orig.)

  7. Structural relaxation in an amorphous rapidly quenched cobalt-based alloy

    International Nuclear Information System (INIS)

    Fradin, V.; Grynszpan, R.I.; Alves, F.; Houzali, A.; Perron, J.C.

    1995-01-01

    An amorphous melt-spun Co-based alloy (Metglas 2705 MN) is investigated by Doppler Broadening and Positron Lifetime techniques in order to follow the microstructural changes yielded by isochronal annealings before crystallization. The results are correlated with those of Differential Scanning Calorimetry and Coercive Field measurements. The quenched empty spaces underlined by Lifetime measurements are less than one atomic volume in size and migrate without clustering in larger voids. Both Positron Annihilation and Coercive Field investigations suggest that the overall decrease of free volume related to structural relaxation in this amorphous material, proceeds mainly via compositional short-range ordering. These local chemical rearrangements which lead to a partial disorientation of the magnetic moments act as strong pinning points for Bloch Walls. (orig.)

  8. Ideal solution behaviour of glassy Cu–Ti, Zr, Hf alloys and properties of amorphous copper

    International Nuclear Information System (INIS)

    Ristić, R.; Cooper, J.R.; Zadro, K.; Pajić, D.; Ivkov, J.; Babić, E.

    2015-01-01

    Highlights: • Ideal solution behaviour (ISB) is established in all Cu–Ti, Zr, Hf glassy alloys. • ISB enables reliable estimates for various properties of amorphous Cu. • ISB also impacts glass forming ability in these and probably other similar alloys. - Abstract: A comprehensive study of selected properties of amorphous (a) Cu–TE alloys (TE = Ti, Zr and Hf) has been performed. Data for average atomic volumes of a-Cu–Hf, Ti alloys combined with literature data show that ideal solution behaviour (Vegard’s law) extends over the whole glass forming range (GFR) in all a-Cu–TE alloys. This enables one to obtain an insight into some properties and probable atomic arrangements for both, a-TEs (Ristić et al., 2010) and a-Cu by extrapolation of the data for alloys. Indeed the atomic volumes and other properties studied for all a-Cu–TE alloys extrapolate to the same values for a-Cu. Depending on the property, these values are either close to those of crystalline (c) Cu, or are close to those for liquid (L) Cu. In particular, the electronic transport properties of a-Cu seem close to those of L-Cu, whereas the static properties, such as the density of states, and Young’s modulus, converge to those of c-Cu. The possible impact of these results on our understanding of a-Cu–TE alloys, including glass forming ability, is discussed

  9. Helium ion damage in an amorphous Fe-Ni-Mo-B alloy

    International Nuclear Information System (INIS)

    Swijgenhoven, H. van; Stals, L.M.; Knuyt, G.

    1983-01-01

    Data are presented on helium gas bubble and helium blister formation for Metglas 2826MB during 5 keV He + -implantation in the temperature range 200K-600K and dose range 5.10 20 -10 22 He + /m 2 . It is concluded that amorphous alloys are less radiation resistant as has been thought earlier. (author)

  10. Magnetic cluster mean-field description of spin glasses in amorphous La-Gd-Au alloys

    International Nuclear Information System (INIS)

    Poon, S.J.; Durand, J.

    1978-03-01

    Bulk magnetic properties of splat-cooled amorphous alloys of composition La/sub 80-x/Gd/sub x/Au 20 (0 less than or equal to x less than or equal to 80) were studied. Zero-field susceptibility, high-field magnetization (up to 75 kOe) and saturated remanence were measured between 1.8 and 290 0 K. Data were analyzed using a cluster mean-field approximation for the spin-glass and mictomagnetic alloys (x less than or equal to 56). Mean-field theories can account for the experimental freezing-temperatures of dilute spin-glasses in which the Ruderman-Kittel-Kasuya-Yosida interaction is dominant. For the dilute alloys, the role of amorphousness on the magnetic interactions is discussed. By extending the mean-field approximation, the concentrated spin-glasses are represented by rigid ferromagnetic clusters as individual spin-entities interacting via random forces. Scaling laws for the magnetization M and saturation remanent magnetization M/sub rs/ are obtained and presented graphically for the x less than or equal to 32 alloys in which M/x = g(H/x*, T/x), M/sub rs/(T)/x = M/sub rs/(0)/x/ exp (-α*T/x/sup p/) where x* is the concentration of clusters, α* is a constant, and p is the freezing-temperature exponent given by T/sub M/ infinity x/sup p/. It is found that p = 1 and 1.3 for the regions 4 less than or equal to x less than or equal to 40 respectively. An attempt is also made to account for the freezing temperatures of concentrated spin glasses. The strength of the interaction among clusters is determined from high-field magnetization measurements using the Larkin-Smith method modified for clusters. It is shown that for the x < 24 alloys, the size of the clusters can be correlated to the structural short-range order in the amorphous state. More concentrated alloys are marked by the emergence of cluster percolation

  11. Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

    Czech Academy of Sciences Publication Activity Database

    Krivyakin, G.K.; Volodin, V.; Kochubei, S.A.; Kamaev, G.N.; Purkrt, Adam; Remeš, Zdeněk; Fajgar, Radek; Stuchlíková, The-Ha; Stuchlík, Jiří

    2016-01-01

    Roč. 50, č. 7 (2016), s. 935-940 ISSN 1063-7826 R&D Projects: GA MŠk LH12236 Institutional support: RVO:68378271 ; RVO:67985858 Keywords : hydrogenated amorphous silicon * nanocrystals * laser annealing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.602, year: 2016

  12. Quantitative description of the magnetization curves of amorphous alloys of the series a-DyxGd1-xNi

    International Nuclear Information System (INIS)

    Barbara, B.; Filippi, J.; Amaral, V.S.

    1992-01-01

    The magnetization curves of the series of amorphous alloys Dy x Gd 1-x Ni measured between 1.5 and 4.2 K and up to 15 T, have been fitted to the zero kelvin analytical model of Chudnovsky. The results of these fits allow a detailed understanding of the magnetization curves of amorphous alloys with ferromagnetic interactions. In particular, the ratio D/J of the local anisotropy and exchange energies, and the magnetic and atomic correlation lengths, are accurately determined. (orig.)

  13. Amorphous metallic alloys for oxygen reduction reaction in a polymer electrolyte membrane fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Huerta, R.; Guerra-Martinez, I.; Lopez, J.S. [Inst. Politecnico Nacional, ESIQIE, Mexico City (Mexico). Lab. de Electroquimica; Pierna, A.R. [Basque Country Univ., San Sebastian (Spain). Dept. of Chemical Engineering and Environment; Solorza-Feria, O. [Inst. Politenico Nacional, Centro de Investigacion y de Estudios Avanzados, Mexico City (Mexico). Dept. de Quimica

    2010-07-15

    Direct methanol fuel cells (DMFC) and polymer electrolyte membrane fuel cells (PEMFC) represent an important, environmentally clean energy source. This has motivated extensive research on the synthesis, characterization and evaluation of novel and stable oxygen reduction electrocatalysts for the direct four-electron transfer process to water formation. Studies have shown that amorphous alloyed compounds can be used as electrode materials in electrochemical energy conversion devices. Their use in PEMFCs can optimize the electrocatalyst loading in the membrane electrode assembly (MEA). In this study, amorphous metallic PtSn, PtRu and PtRuSn alloys were synthesized by mechanical milling and used as cathodes for the oxygen reduction reaction (ORR) in sulphuric acid and in a single PEM fuel cell. Two different powder morphologies were observed before and after the chemical activation in a hydrofluoric acid (HF) solution at 25 degrees C. The kinetics of the ORR on the amorphous catalysts were investigated. The study showed that the amorphous metallic PtSn electrocatalyst was the most active of the 3 electrodes for the cathodic reaction. Fuel cell experiments were conducted at various temperatures at 30 psi for hydrogen (H{sub 2}) and at 34 psi for oxygen (O{sub 2}). MEAs made of Nafion 115 and amorphous metallic PtSn dispersed on carbon powder in a PEMFC had a power density of 156 mW per cm{sup 2} at 0.43V and 80 degrees C. 12 refs., 1 tab., 5 figs.

  14. Structural studies of amorphous Mo-Ge alloys using synchrotron radiation

    International Nuclear Information System (INIS)

    Kortright, J.B.

    1984-06-01

    Structural changes in sputtered amorphous Mo-Ge alloy films with composition varying from a-Ge to about 70 at. % Mo have been studied with several x-ray techniques. Results of individual techniques are presented and discussed in separate chapters. The complementary nature of information obtained from EXAFS and scattering for these materials is discussed in a separate chapter. A concluding chapter summarizes the results and structural changes with composition

  15. Amorphous silicon thin-film solar cells on glass fiber textiles

    Energy Technology Data Exchange (ETDEWEB)

    Plentz, Jonathan, E-mail: jonathan.plentz@leibniz-ipht.de; Andrä, Gudrun; Pliewischkies, Torsten; Brückner, Uwe; Eisenhawer, Björn; Falk, Fritz

    2016-02-15

    Graphical abstract: - Highlights: • Amorphous silicon solar cells on textile glass fiber fabrics are demonstrated. • Open circuit voltages of 883 mV show shunt-free contacting on non-planar fabrics. • Short-circuit current densities of 3.7 mA/cm{sup 2} are limited by transmission losses. • Fill factors of 43.1% and pseudo fill factors of 70.2% show high series resistance. • Efficiencies of 1.4% and pseudo efficiencies of 2.1% realized on textile fabrics. - Abstract: In this contribution, amorphous silicon thin-film solar cells on textile glass fiber fabrics for smart textiles are prepared and the photovoltaic performance is characterized. These solar cells on fabrics delivered open circuit voltages up to 883 mV. This shows that shunt-free contacting of the solar cells was successful, even in case of non-planar fabrics. The short-circuit current densities up to 3.7 mA/cm{sup 2} are limited by transmission losses in a 10 nm thin titanium layer, which was used as a semi-transparent contact. The low conductivity of this layer limits the fill factor to 43.1%. Pseudo fill factors, neglecting the series resistance, up to 70.2% were measured. Efficiencies up to 1.4% and pseudo efficiencies up to 2.1% were realized on textile fabrics. A transparent conductive oxide could further improve the efficiency to above 5%.

  16. Observation of correlation effects in the hopping transport in amorphous silicon

    International Nuclear Information System (INIS)

    Voegele, V.; Kalbitzer, S.; Boehringer, K.

    1985-01-01

    Amorphous silicon films have been modified by the implantation of Au or Si ions. The d.c. conductivity, measured between 300 and 15 K, was found to exhibit hopping exponents m which increase with decreasing temperature. Depending on the varied defect densities, m ranges between the limits of 1/4 and 1. These results can be explained by variable-range-hopping theory, if a Coulomb correlation term is included. (author)

  17. A possible mechanism of ultrafast amorphization in phase-change memory alloys: an ion slingshot from the crystalline to amorphous position

    International Nuclear Information System (INIS)

    Kolobov, A V; Mishchenko, A S; Fons, P; Yakubenya, S M; Tominaga, J

    2007-01-01

    We propose that the driving force of the ultrafast crystalline-to-amorphous transition in phase-change memory alloys is caused by strained bonds existing in the (metastable) crystalline phase. For the prototypical example of Ge 2 Sb 2 Te 5 , we demonstrate that upon breaking of the longer Ge-Te bond by photoexcitation, a Ge ion is shot from an octahedral crystalline to a tetrahedral amorphous position by the uncompensated force of strained short bonds. Subsequent lattice relaxation stabilizes the tetrahedral surroundings of the Ge atoms and ensures the long-term stability of the optically induced phase

  18. Effect of heating rates of crystallization behaviour of amorphous Fe/sub 83/01/B/sub 17/ alloy

    International Nuclear Information System (INIS)

    Ashfaq, A.; Shamim, A.

    1993-01-01

    The electric resistivity of amorphous Fe/sub 83/01/B/sub 17/ alloy has been measured to study its crystallization behaviour from room temperature to about 900 K at the constant heating rates of 40, 60 and 80 K/hr. The crystallization temperature was observed to increase with the increase of heating g rate. However amorphous to crystalline path of RT-curve between the maximum and the minimum decreases with heating rate. The Resistivity Temperature (RT) curves exhibit different steps which are shown to correspond to the phase change stages of the alloy. The slope of the rt-curve after the previous step increases with the rise in heating rate and finally passes through a board peak and then rises again. From the peak shift dta of first crystallization stage activation energy was calculated by applying various peak shift equations. The values so obtained were in good agreement with those obtained with DSC measurement for (FeM)/sub 83/01/B/sub 17/ amorphous alloys where M=Mo, Ni, Cr, and V. (author)

  19. Food applications and the toxicological and nutritional implications of amorphous silicon dioxide.

    Science.gov (United States)

    Villota, R; Hawkes, J G

    1986-01-01

    The chemical and physical characteristics of the different types of amorphous silicon dioxide contribute to the versatility of these compounds in a variety of commercial applications. Traditionally, silicas have had a broad spectra of product usage including such areas as viscosity control agents in inks, paints, corrosion-resistant coatings, etc. and as excipients in pharmaceuticals and cosmetics. In the food industry, the most important application has been as an anticaking agent in powdered mixes, seasonings, and coffee whiteners. However, amorphous silica has multifunctional properties that would allow it to act as a viscosity control agent, emulsion stabilizer, suspension and dispersion agent, desiccant, etc. The utilization of silicas in these potential applications, however, has not been undertaken, partially because of the limited knowledge of their physiochemical interactions with other food components and partially due to their controversial status from a toxicological point of view. The main goal of this review is to compile current information on the incorporation of amorphous silicon dioxide as a highly functional and viable additive in the food processing industry as well as to discuss the most recent toxicological investigations of silica in an attempt to present some of the potential food applications and their concomitant toxicological implications. Some of the more significant differences between various silicas and their surface chemistries are presented to elucidate some of their mechanisms of interaction with food components and other biological systems and to aid in the prediction of their rheological or toxicological behavior.

  20. Short-range order in ab initio computer generated amorphous and liquid Cu–Zr alloys: A new approach

    Energy Technology Data Exchange (ETDEWEB)

    Galván-Colín, Jonathan, E-mail: jgcolin@ciencias.unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, México, D.F. 04510, México (Mexico); Valladares, Ariel A., E-mail: valladar@unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, México, D.F. 04510, México (Mexico); Valladares, Renela M.; Valladares, Alexander [Facultad de Ciencias, Universidad Nacional Autónoma de México, Apartado Postal 70-542, México, D.F. 04510, México (Mexico)

    2015-10-15

    Using ab initio molecular dynamics and a new approach based on the undermelt-quench method we generated amorphous and liquid samples of Cu{sub x}Zr{sub 100−x} (x=64, 50, 36) alloys. We characterized the topology of our resulting structures by means of the pair distribution function and the bond-angle distribution; a coordination number distribution was also calculated. Our results for both amorphous and liquids agree well with experiment. Dependence of short-range order with the concentration is reported. We found that icosahedron-like geometry plays a major role whenever the alloys are Cu-rich or Zr-rich disregarding if the samples are amorphous or liquid. The validation of these results, in turn would let us calculate other properties so far disregarded in the literature.

  1. Relaxation processes and structural transformations in amorphous Co-Fe-Si-B alloys

    International Nuclear Information System (INIS)

    Dus-Sitek, M.; Olszowski, Z.

    1994-01-01

    The thermostimulated electron emission (TSEE) method was applied for determination of relaxation and crystallization processes in amorphous alloys. By using the analogy of DTA-method, the activation energy of relaxation and crystallization processes has been determined from the measurements of changes of TSEE temperature maxima depending on the heating rate

  2. Investigation of structural relaxation, crystallization process and magnetic properties of the Fe-Ni-Si-B-C amorphous alloy

    International Nuclear Information System (INIS)

    Kalezic-Glisovic, A.; Novakovic, L.; Maricic, A.; Minic, D.; Mitrovic, N.

    2006-01-01

    The differential scanning calorimetry method was used for investigating the crystallization process of the Fe 89.8 Ni 1.5 Si 5.2 B 3 C 0.5 amorphous alloy. It was shown that the examined alloy crystallizes in three stages. The first crystallization stage occurs at 799 K, the second at 820 K and the third at 888 K. Temperature dependence of the magnetic susceptibility relative change was investigated by the modified Faraday method in the temperature region from room temperature up to 900 K. It has been established that the Curie temperature is about 700 K for amorphous state. The magnetic susceptibility increases by 30% after the first heating up to 710 K. During the second heating up to 840 K the alloy loses its ferromagnetic features in the temperature region from 710 to 750 K, upon which it again regains the same. After the second heating magnetic susceptibility decreases by 23% as compared to the amorphous starting value and by 53% as compared to the value before the second heating. The crystallized alloy maintains ferromagnetic features in the whole temperature region during the heating up to 900 K

  3. Investigation of structural relaxation, crystallization process and magnetic properties of the Fe-Ni-Si-B-C amorphous alloy

    Energy Technology Data Exchange (ETDEWEB)

    Kalezic-Glisovic, A. [Joint Laboratory for Advanced Materials of SASA, Section for Amorphous Systems, Technical Faculty Cacak, Svetog Save 65, 32000 Cacak (Serbia and Montenegro)]. E-mail: aleksandrakalezic@eunet.yu; Novakovic, L. [Faculty of Physics, Studentski trg 16, 11000 Belgrade (Serbia and Montenegro); Maricic, A. [Joint Laboratory for Advanced Materials of SASA, Section for Amorphous Systems, Technical Faculty Cacak, Svetog Save 65, 32000 Cacak (Serbia and Montenegro); Minic, D. [Faculty of Physical Chemistry, Studentski trg 16, 11000 Belgrade (Serbia and Montenegro); Mitrovic, N. [Joint Laboratory for Advanced Materials of SASA, Section for Amorphous Systems, Technical Faculty Cacak, Svetog Save 65, 32000 Cacak (Serbia and Montenegro)]. E-mail: nmitrov@tfc.kg.ac.yu

    2006-07-15

    The differential scanning calorimetry method was used for investigating the crystallization process of the Fe{sub 89.8}Ni{sub 1.5}Si{sub 5.2}B{sub 3}C{sub 0.5} amorphous alloy. It was shown that the examined alloy crystallizes in three stages. The first crystallization stage occurs at 799 K, the second at 820 K and the third at 888 K. Temperature dependence of the magnetic susceptibility relative change was investigated by the modified Faraday method in the temperature region from room temperature up to 900 K. It has been established that the Curie temperature is about 700 K for amorphous state. The magnetic susceptibility increases by 30% after the first heating up to 710 K. During the second heating up to 840 K the alloy loses its ferromagnetic features in the temperature region from 710 to 750 K, upon which it again regains the same. After the second heating magnetic susceptibility decreases by 23% as compared to the amorphous starting value and by 53% as compared to the value before the second heating. The crystallized alloy maintains ferromagnetic features in the whole temperature region during the heating up to 900 K.

  4. Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

    Energy Technology Data Exchange (ETDEWEB)

    Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

  5. Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

    International Nuclear Information System (INIS)

    Wang Guigen; Kuang Xuping; Zhang Huayu; Zhu Can; Han Jiecai; Zuo Hongbo; Ma Hongtao

    2011-01-01

    Highlights: ► The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. ► It highlighted the influences of Si-N underlayers. ► The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of −150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of −150 V, can provide better corrosion protection for high-density magnetic recording sliders.

  6. Electroless siliconizing Fe-3% Cr-3% Si alloy

    International Nuclear Information System (INIS)

    Nurlina, Enung; Darmono, Budy; Purwadaria, Sunara

    2000-01-01

    In this research Fe-3%Cr-3%Mo-3%Si and Fe-3%Cr-3%Cu-3%Si alloys had been coated by silicon metal without electricity current which knows as electroless siliconizing. Coating was conducted by immersed sampler into melt fluoride-chloride salt bath at temperature of 750 o C for certain period. The layer consisted of Fe3Si phase. Observation by microscope optic and EDAX showed that the silicide layer were thick enough, adherent, free for crack and had silicon content on the surface more than 15%. The growth rate of silicide layer followed parabolic rate law, where the process predominantly controlled by interdiffusion rate in the solid phase. Key words : electroless siliconizing, the melt fluoride- chloride salt mix, silicide layer

  7. Coherent electron-correlation compatible with random atom stacking in amorphous Ce-Ru alloys

    International Nuclear Information System (INIS)

    Homma, Yoshiya; Sumiyama, Kenji; Yamauchi, Hiroshi; Suzuki, Kenji

    1997-01-01

    The amorphous Ce-Ru alloys produced by the sputtering technique show the following distinct behaviors at low temperatures. The electronic specific heat coefficient rapidly increases below 5 K for Ce-19 and 42 at.%Ru alloys with decreasing temperature, T, (a heavy fermion behavior). The electrical resistivity displays -logT dependence at T > 40 K (an incoherent or impurity Kondo effect). Is slightly decreases at T < 30 K for Ce-19 and 42 at.%Ru alloys (a coherent Kondo effect), while it abruptly decreases at 2.5 K for 82 at.%Ru (a superconducting phenomenon). These coherent states may originate from the strong mixing and correlation of 4f-electrons and conduction-electrons even in the random alloy system. (author)

  8. Solid solution and amorphous phase in Ti–Nb–Ta–Mn systems synthesized by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Aguilar, C., E-mail: claudio.aguilar@usm.cl [Departamento de Ingeniería Metalúrgica y Materiales, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Guzman, P. [Departamento de Ingeniería Metalúrgica y Materiales, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Lascano, S. [Departamento de Ingeniería Mecánica, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Parra, C. [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Bejar, L. [Instituto de Investigaciones Metalúrgicas, Universidad Michoacana de San Nicolás de Hidalgo, Ciudad Universitaria, Morelia C.P. 58000, Michoacán (Mexico); Medina, A. [Facultad de Ingeniería Mecánica, Universidad Michoacana de San Nicolás de Hidalgo, Ciudad Universitaria, C.P. 58000, Michoacán (Mexico); Guzman, D. [Departamento de Metalurgia, Universidad de Atacama, Av. España 485, Copiapó (Chile)

    2016-06-15

    This work discusses the formation of Ti–30Nb–13Ta–xMn (x: 2, 4 and 6 wt%) solid solution by mechanical alloying using a shaker mill. A solid solution was formed after 15 h of milling and an amorphous phase was formed after 30 h of milling, according to X-ray diffraction results. Disappearance of strongest X-ray diffraction peaks of Nb, Ta and Mn indicated the formation of solid solution, while, X-ray diffraction patterns of powders milled for 30 h showed an amorphous hump with crystalline peaks in the angular range of 35–45° in 2θ. TEM image analysis showed the presence of nanocrystalline intermetallic compounds embedded in an amorphous matrix. Mn{sub 2}Ti, MnTi and NbTi{sub 4} intermetallic compounds were detected and revealed crystallites with size ranging from 3 to 20 nm. The Gibbs free energy for the formation of solid solution and amorphous phase of three ternary systems (Ti–Nb–Ta, Ti–Nb–Mn and Ti–Ta–Mn) was calculated using extended Miedema's model. Experimental and thermodynamic data confirmed that solid solution was first formed in the alloy with 6wt% Mn followed by the formation of an amorphous phase as milling time increases. The presence of Mn promoted the formation of amorphous phase because the atomic radius difference between Mn with Ti, Nb and Ta. - Highlights: • Thermodynamics analysis of extension of solid solution of the Ti–Nb–Ta–Mn system. • Formation of amorphous phase and intermetallic compounds were observed. • Nanocrystalline intermetallic compounds were formed with the sizes between 3 and 20 nm.

  9. Amorphous silicon pixel layers with cesium iodide converters for medical radiography

    International Nuclear Information System (INIS)

    Jing, T.; Cho, G.; Goodman, C.A.

    1993-11-01

    We describe the properties of evaporated layers of Cesium Iodide (Thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220μm. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1--0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200--300C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately lμm thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less then 50μm. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on pattered substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level

  10. Direct and inverse Staebler-Wronski effects observed in carbon-doped hydrogenated amorphous silicon photo-detectors

    International Nuclear Information System (INIS)

    Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Brochero, J.; Calderon, A.; Fernandez, M.G.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Sobron, M.

    2011-01-01

    The photo-response behaviour of Amorphous Silicon Position Detectors (ASPDs) under prolonged illumination with a 681 nm diode-laser and a 633 nm He-Ne laser is presented. Both direct and inverse Staebler-Wronski effects are observed.

  11. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    International Nuclear Information System (INIS)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D.; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M.; Bednarcik, J.; Michalikova, J.

    2015-01-01

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O 2 atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al 2 O 3 formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO 2 at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al 2 O 3 with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds

  12. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D., E-mail: music@mch.rwth-aachen.de; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Bednarcik, J.; Michalikova, J. [Deutsches Elektronen Synchrotron DESY, FS-PE group, Notkestrasse 85, D-22607 Hamburg (Germany)

    2015-01-14

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

  13. Formation of hypereutectic silicon particles in hypoeutectic Al-Si alloys under the influence of high-intensity ultrasonic vibration

    Directory of Open Access Journals (Sweden)

    Xiaogang Jian

    2013-03-01

    Full Text Available The modification of eutectic silicon is of general interest since fine eutectic silicon along with fine primary aluminum grains improves mechanical properties and ductilities. In this study, high intensity ultrasonic vibration was used to modify the complex microstructure of aluminum hypoeutectic alloys. The ultrasonic vibrator was placed at the bottom of a copper mold with molten aluminum. Hypoeutectic Al-Si alloy specimens with a unique in-depth profile of microstructure distribution were obtained. Polyhedral silicon particles, which should form in a hypereutectic alloy, were obtained in a hypoeutectic Al-Si alloy near the ultrasonic radiator where the silicon concentration was higher than the eutectic composition. The formation of hypereutectic silicon near the radiator surface indicates that high-intensity ultrasonic vibration can be used to influence the phase transformation process of metals and alloys. The size and morphology of both the silicon phase and the aluminum phase varies with increasing distance from the ultrasonic probe/radiator. Silicon morphology develops into three zones. Polyhedral primary silicon particles present in zone I, within 15 mm from the ultrasonic probe/radiator. Transition from hypereutectic silicon to eutectic silicon occurs in zone II about 15 to 20 祄 from the ultrasonic probe/radiator. The bulk of the ingot is in zone III and is hypoeutectic Al-Si alloy containing fine lamellar and fibrous eutectic silicon. The grain size is about 15 to 25 祄 in zone I, 25 to 35 祄 in zone II, and 25 to 55 祄 in zone III. The morphology of the primary ?Al phase is also changed from dendritic (in untreated samples to globular. Phase evolution during the solidification process of the alloy subjected to ultrasonic vibration is described.

  14. Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

    CERN Document Server

    Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

  15. The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    Wang Guang-Hong; Zhao Lei; Yan Bao-Jun; Chen Jing-Wei; Wang Ge; Diao Hong-Wei; Wang Wen-Jing

    2013-01-01

    Different aluminum-doped ZnO (AZO)/metal composite thin films,including AZO/Ag/Al,AZO/Ag/nickelchromium alloy (NiCr),and AZO/Ag/NiCr/Al,are utilized as the back reflectors of p-i-n amorphous silicon germanium thin film solar cells.NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion,which increases the short circuit current density of solar cell.NiCr and NiCr/Al layers are used as protective layers of Ag layer against oxidation and sulfurization,the higher efficiency of solar cell is achieved.The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best.The initial conversion efficiency is achieved to be 8.05%.

  16. Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

    Science.gov (United States)

    Singh, M.; Behrendt, D. R.

    1992-01-01

    Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

  17. Investigation of carrier density and mobility in microcrystalline silicon alloys using Hall effect and thermopower measurements; Untersuchung der Ladungstraegerkonzentration und -beweglichkeit in mikrokristallinen Siliziumlegierungen mit Hall-Effekt und Thermokraft

    Energy Technology Data Exchange (ETDEWEB)

    Sellmer, Christian

    2012-08-31

    The electronic properties of amorphous and microcrystalline silicon layers in thin-film solar cells significantly affect the efficiency of solar cells. An important property of the individual layer is the electronic transport, which is described by the variables conductivity, photoconductivity, mobility, and carrier concentration. In the past, individual characterization methods were typically used to determine the electronic properties. Using the combination of Hall effect, conductivity, and thermoelectric power measurements additional variables can be derived, such as the effective density of states at the valence and conduction band edge, making a more detailed description of the material possible. To systematically study the electronic properties - in particular carrier mobility and carrier concentration - various series of silicon films are prepared for this work including microcrystalline silicon layers of different doping and crystallinity and a series of silicon films where the Fermi level is moved by irradiation with high energy electrons on one and the same sample. The results show that the transition from amorphous to microcrystalline transport is relatively abrupt. If the electron transport takes place in only amorphous regions, it is marked by the sign anomaly of the Hall effect. If a continuous crystalline path exists, the electronic properties are dominated by the crystalline volume fraction. The results of the measurements of silicon layers are compared with those of microcrystalline silicon carbide samples. Silicon carbide is especially interesting for future applications in thin-film solar cells due to high transparency and high conductivity. It is shown that the effective density of states at the valence and conduction band edge as a function of temperature in p- and n-type microcrystalline silicon and silicon carbide samples largely coincide with those of crystalline silicon or silicon carbide. A square root shaped profile of the density of

  18. Method for producing evaporation inhibiting coating for protection of silicon--germanium and silicon--molybdenum alloys at high temperatures in vacuum

    Science.gov (United States)

    Chao, P.J.

    1974-01-01

    A method is given for protecting Si--Ge and Si-- Mo alloys for use in thermocouples. The alloys are coated with silicon to inhibit the evaporation of the alloys at high tempenatures in a vacuum. Specific means and methods are provided. (5 fig) (Official Gazette)

  19. Amorphization and evolution of magnetic properties during mechanical alloying of Co{sub 62}Nb{sub 6}Zr{sub 2}B{sub 30}: Dependence on starting boron microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, L.M.; Blázquez, J.S., E-mail: jsebas@us.es; Ipus, J.J.; Conde, A.

    2014-02-05

    Highlights: • Mechanical alloying of Co{sub 62}Nb{sub 6}Zr{sub 2}B{sub 30} leads to amorphous phase with B inclusions. • Using optimized amorphous B, amorphization occurs earlier. • B is more effectively introduced in the matrix using amorphous B. • Magnetoelasic contribution to effective magnetic anisotropy is negligible. -- Abstract: Co{sub 62}Nb{sub 6}Zr{sub 2}B{sub 30} composition was mechanically alloyed using three different types of boron powders in the starting mixture: crystalline β-B, commercial amorphous B and optimized amorphous B via ball milling. Using optimized amorphous B, amorphization process of the alloy is more efficient but milling to optimize amorphous B introduces some iron contamination. Boron inclusions (100–150 nm in size) remain even after long milling times. However, using amorphous boron reduces the fraction of boron distributed as inclusions to ∼40% of the total B. Thermal stability at the end of the milling process is affected by the initial boron microstructure. Coercivity is reduced a half using amorphous B instead of crystalline B in the starting mixture.

  20. Quantitative description of the magnetization curves of amorphous alloys of the series a-Dy xGd 1-xNi

    Science.gov (United States)

    Barbara, B.; Amaral, V. S.; Filippi, J.

    1992-10-01

    The magnetization curves of the series of amorphous alloys Dy xGd 1- xNi measured between 1.5 and 4.2 K and up to 15 T, have been fitted to the zero kelvin analytical model of Chudnovsky [1]. The results of these fits allow a detailed understanding of the magnetization curves of amorphous alloys with ferromagnetic interactions. In particular, the ratio D/ J of the local anisotropy and exchange energies, and the magnetic and atomic correlation lengths, are accurately determined.

  1. Properties of p-type amorphous silicon carbide window layers prepared using boron trifluoride

    Energy Technology Data Exchange (ETDEWEB)

    Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

    1993-03-01

    One set (A) of undoped and three sets (B, C and D) of doped hydrogenated amorphous silicon carbide samples have been made in the framework of a research plan for obtaining high quality p-type window layers by radiofrequency glow discharge of silane-based gas mixtures. The samples of sets A and B were made using different RF-power-density to mass-flow ratios for various methane percentages in the gas mixture. The best carbon incorporation in the amorphous silicon lattice was obtained at the highest RF-power density. The properties of sets C and D, prepared using different RF-power densities and silane and methane proportions have been analysed as functions of the concentration of boron trifluoride with respect to silane. In both cases, the optical gap E[sub G], after a slight initial decrease, remains at a value of approximately 2.1 eV without quenching in the doping ranges covered. The best conductivity obtained is 2x10[sup -7] ([Omega] cm)[sup -1]. IR spectra allow to associate these features with the structural quality of the films. (orig.)

  2. Model of the recrystallization mechanism of amorphous silicon layers created by ion implantation

    International Nuclear Information System (INIS)

    Drosd, R.M.

    1979-11-01

    The recrystallization behavior during annealing of thin films of amorphous (α) silicon, in contact with a single crystal silicon substrate (referred to as C), has been studied in the transmission electron microscope (TEM). The amorphous film is created during high dose phosphorus ion implantation at 100 keV. It was found that the crystal substrate orientation and the implantation temperature have dramatic effects on the recrystallizaton rate, and the defect microstructure produced during annealing. Specifically, (100) wafers implanted at 77 0 K contain only a low density of dislocation loops, but when the same wafer is implanted at room temperature the dislocation density is increased drastically. (111) wafers, when implanted at 77 0 K show a high density of microtwins, but as the implantation temperature is increased a gradual increase in the density of dislocation loops is observed along with a reduction of the microtwins. At an implantation temperature of about 100 0 C both orientations give an identical defect microstructure when annealed, which is a dense tangle of dislocations

  3. Thermal relaxation of magnetic clusters in amorphous Hf57Fe43 alloy

    International Nuclear Information System (INIS)

    Pajic, Damir; Zadro, Kreso; Ristic, Ramir; Zivkovic, Ivica; Skoko, Zeljko; Babic, Emil

    2007-01-01

    The magnetization processes in binary magnetic/non-magnetic amorphous alloy Hf 57 Fe 43 are investigated by the detailed measurement of magnetic hysteresis loops, temperature dependence of magnetization, relaxation of magnetization and magnetic ac susceptibility, including a nonlinear term. Blocking of magnetic moments at lower temperatures is accompanied by the slow relaxation of magnetization and magnetic hysteresis loops. All of the observed properties are explained by the superparamagnetic behaviour of the single domain magnetic clusters inside the non-magnetic host, their blocking by the anisotropy barriers and thermal fluctuation over the barriers accompanied by relaxation of magnetization. From magnetic viscosity analysis based on thermal relaxation over the anisotropy barriers it is found that magnetic clusters occupy the characteristic volume from 25 up to 200 nm 3 . The validity of the superparamagnetic model of Hf 57 Fe 43 is based on the concentration of iron in the Hf 100-x Fe x system that is just below the threshold for long range magnetic ordering. This work also throws more light on the magnetic behaviour of other amorphous alloys

  4. Theoretical study of the localization-delocalization transition in amorphous molybdenum-germanium alloys

    International Nuclear Information System (INIS)

    Ding, K.; Andersen, H.C.

    1987-01-01

    Electronic structure calculations were performed for amorphous germanium and amorphous alloys of molybdenum and germanium. The calculations used Harrison's universal linear-combination-of-atomic-orbitals parameters to generate one-electron Hamiltonians for structural configurations obtained from molecular-dynamics simulations. The density of states calculated for a model of a-Ge showed a distinct pseudogap, although with an appreciable density of states at the minimum. The states in the pseudogap are localized. As the concentration of Mo atoms increases, the pseudogap of the density of states is gradually filled up. The density of states at the Fermi energy calculated for our model of the alloys agrees quite well with that experimentally determined by Yoshizumi, Geballe, and co-workers. The localization index for the states at the Fermi energy is a decreasing function of Mo concentration in the range of 2--14 at. % Mo and the localization length is an increasing function of molybdenum concentration. These results are consistent with the experimental observation of an insulator-metal transition at about 10 at. % Mo

  5. Interface properties of the amorphous silicon/crystalline silicon heterojunction photovoltaic cell

    Science.gov (United States)

    Halliop, Basia

    Amorphous-crystalline silicon (a-Si:H/c-Si) heterojunctions have the potential of being a very high efficiency silicon photovoltaic platform technology with accompanying cost and energy budget reductions. In this research a heterojunction cell structure based on a-Si:H deposited using a DC saddle field plasma enhanced vapour deposition (DCSF PECVD) technique is studied, and the a-Si:H/c-Si and indium tin oxide/a-Si:H interfaces are examined using several characterization methods. Photocarrier radiometry (PCR) is used for the first time to probe the a-Si:H/c-Si junction. PCR is demonstrated as a carrier lifetime measurement technique -- specifically, confirming carrier lifetimes above 1 ms for 1-5 Ocm phosphorous-doped c-Si wafers passivated on both sides with 30 nm of i-a-Si:H. PCR is also used to determine surface recombination velocity and mobility, and to probe recombination at the a-Si:H/c-Si interface, distinguishing interface recombination from recombination within the a-Si:H layer or at the a-Si:H surface. A complementary technique, lateral conductivity is applied over a temperature range of 140 K to 430 K to construct energy band diagrams of a-Si:H/c-Si junctions. Boron doped a-Si:H films on glass are shown to have activation energies of 0.3 to 0.35 eV, tuneable by adjusting the diborane to silane gas ratio during deposition. Heterojunction samples show evidence of a strong hole inversion layer and a valence band offset of approximately 0.4 eV; carrier concentration in the inversion layer is reduced in p-a-Si:H/i-a-Si:H/ c-Si structures as intrinsic layer thickness increases, while carrier lifetime is increased. The indium tin oxide/amorphous silicon interface is also examined. Optimal ITO films were prepared with a sheet resistance of 17.3 O/[special character omitted] and AM1.5 averaged transmittance of 92.1%., for a film thickness of approximately 85 nm, using temperatures below 200°C. Two different heat treatments are found to cause crystallization of

  6. Effects of thermal relaxation on an amorphous superconducting Zr--Rh alloy

    International Nuclear Information System (INIS)

    Drehman, A.J.; Johnson, W.L.

    1978-05-01

    The electronic and superconducting properties of an amorphous transition metal alloy are used to evaluate the effects of low temperature annealing. It is observed that the superconducting transition temperature and the electrical resistivity relax exponentially in time from their initial value to a final relaxed value. From this an activation energy for the relaxation process is derived and an explanation is suggested which involves internal stress

  7. Three-dimensional amorphous silicon solar cells on periodically ordered ZnO nanocolumns

    Czech Academy of Sciences Publication Activity Database

    Neykova, Neda; Moulin, E.; Campa, A.; Hruška, Karel; Poruba, Aleš; Stückelberger, M.; Haug, F.J.; Topič, M.; Ballif, C.; Vaněček, Milan

    2015-01-01

    Roč. 212, č. 8 (2015), s. 1823-1829 ISSN 1862-6300 R&D Projects: GA MŠk 7E12029; GA ČR(CZ) GA14-05053S EU Projects: European Commission(XE) 283501 - FAST TRACK Institutional support: RVO:68378271 Keywords : amorphous materials * hydrothermal growth * nanostructures * silicon * solar cells * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.648, year: 2015

  8. High-efficiency amorphous silicon solar cell on a periodic nanocone back reflector

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Ching-Mei; Cui, Yi [Department of Materials Science and Engineering, Durand Building, 496 Lomita Mall, Stanford University, Stanford, CA 94305-4034 (United States); Battaglia, Corsin; Pahud, Celine; Haug, Franz-Josef; Ballif, Christophe [Ecole Polytechnique Federale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin Film Electronics Laboratory, Rue Breguet 2, 2000 Neuchatel (Switzerland); Ruan, Zhichao; Fan, Shanhui [Department of Electrical Engineering, Stanford University (United States)

    2012-06-15

    An amorphous silicon solar cell on a periodic nanocone back reflector with a high 9.7% initial conversion efficiency is presented. The optimized back-reflector morphology provides powerful light trapping and enables excellent electrical cell performance. Up-scaling to industrial production of large-area modules should be possible using nanoimprint lithography. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Investigation of inhomogeneous deformation in band amorphous alloys at constant heating rate

    Science.gov (United States)

    Fedorov, Victor; Berezner, Arseniy; Pluzhnikova, Tatiana; Beskrovnyi, Anatolyi

    2017-11-01

    The present paper contains investigations of the creep process in the cobalt-based amorphous metallic alloy within the temperature range from 300 up to 1023 K. In all the curves of deformation there were observed jumps and dying oscillations. It is noted that the creep of the sample ribbons is unstable and results in the thinning of ribbons with tightening and crimping. There is suggested the mechanism of inhomogeneous deformation, which takes place in course of the process of creep under intermittent heating. For the evaluation of amorphism in the treated samples there have been carried out neutron-graphical and X-ray diffraction investigations, as well as thermal analysis.

  10. Amorphous NEA Silicon Photocathodes - A Robust RF Gun Electron Source. Final Report

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.

    2009-01-01

    Amorphous silicon (a-Si) has been shown to have great promise as a negative electron affinity visible wavelength photocathode suitable for radio frequency (RF) gun systems. The specific operating wavelength can be shifted by growing it as a germanium alloy (a-Si(1-x)Ge(x)) rather than as pure silicon. This class of photoemitters has been shown to possess a high degree of immunity to charged particle flux. Such particle flux can be a significant problem in the operation of other photocathodes in RF gun systems. Its emission characteristics in the form of current per unit area, or current density, and emission angle, or beam spread are well matched for use in RF guns. Photocathodes made of a-Si can be fabricated on a variety of substrates including those most commonly employed in RF gun systems. Such photocathodes can be made for operation in either transmission or reflection mode. By growing them utilizing radio frequency plasma enhanced chemical vapor deposition, the unit cost is quite low, the quality is high and it is straightforward to grow custom size substrates and full or limited regions to confine the electron emission to the desired area. Quality emitters have been fabricated on tantalum, molybdenum, tungsten, titanium, copper, stainless steel, float glass, borosilicate glass and gallium arsenide. In addition to performing well in dedicated test chambers, a-Si photocathodes have been shown to function well in self-contained vacuum tubes. In this employment, they are subjected to a strenuous environment. Successful operation in this configuration provides additional confidence in their application to high energy linac photoinjectors and potentially as part of reliable, low cost photocathode driven RF gun systems that could become ready replacements for the diode and triode guns used on medical accelerators. Their applications in stand-alone vacuum tubes is just beginning to be explored.

  11. Evidence of eutectic crystallization and transient nucleation in Al89La6Ni5 amorphous alloy

    International Nuclear Information System (INIS)

    Zhuang, Y. X.; Jiang, J. Z.; Lin, Z. G.; Mezouar, M.; Crichton, W.; Inoue, A.

    2001-01-01

    The phase evolution with the temperature and time in the process of crystallization of Al 89 La 6 Ni 5 amorphous alloy has been investigated by in situ high-temperature and high-pressure x-ray powder diffraction using synchrotron radiation. Two crystalline phases, fcc-Al and a metastable bcc-(AlNi) 11 La 3 -like phase, were identified after the first crystallization reaction, revealing a eutectic reaction instead of a primary reaction suggested in the literature. Time-dependent nucleation in the amorphous alloy is detected and the experimental data can be fitted by both the Zeldovich's and Kashchiev's transient nucleation models with transient nucleation times of 220 and 120 min, respectively. Copyright 2001 American Institute of Physics

  12. Effect of crystallization on corrosion behavior of Fe40Ni38B18Mo4 amorphous alloy in 3.5% sodium chloride solution

    DEFF Research Database (Denmark)

    Wu, Y.F.; Chiang, Wen-Chi; Wu, J.K.

    2008-01-01

    After the crystallization of F40Ni38B18Mo4 amorphous alloy by vacuum annealing, the corrosion resistance of its crystalline state shows inferior to its amorphous state due to the local cell action between Ni phase and (Fe, Ni, Mo)(23)B-6 phase in matrix.......After the crystallization of F40Ni38B18Mo4 amorphous alloy by vacuum annealing, the corrosion resistance of its crystalline state shows inferior to its amorphous state due to the local cell action between Ni phase and (Fe, Ni, Mo)(23)B-6 phase in matrix....

  13. Anisotropic phase separation through the metal-insulator transition in amorphous Mo-Ge and Fe-Ge alloys

    International Nuclear Information System (INIS)

    Regan, M.J.

    1993-12-01

    Since an amorphous solid is often defined as that which lacks long-range order, the atomic structure is typically characterized in terms of the high-degree of short-range order. Most descriptions of vapor-deposited amorphous alloys focus on characterizing this order, while assuming that the material is chemically homogeneous beyond a few near neighbors. By coupling traditional small-angle x-ray scattering which probes spatial variations of the electron density with anomalous dispersion which creates a species-specific contrast, one can discern cracks and voids from chemical inhomogeneity. In particular, one finds that the chemical inhomogeneities which have been previously reported in amorphous Fe x Ge 1-x and Mo x Ge 1-x are quite anisotropic, depending significantly on the direction of film growth. With the addition of small amounts of metal atoms (x 2 or MoGe 3 . Finally, by manipulating the deposited power flux and rates of growth, Fe x Ge 1-x films which have the same Fe composition x can be grown to different states of phase separation. These results may help explain the difficulty workers have had in isolating the metal/insulator transition for these and other vapor-deposited amorphous alloys

  14. Dependence of RF power on the content and configuration of hydrogen in amorphous hydrogenated silicon by reactive sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Imura, T; Ushita, K; Mogi, K; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

    1981-06-01

    Infrared absorption spectra at stretching bands of Si-H were investigated in hydrogenated amorphous silicon fabricated by reactive sputtering in the atmosphere of Ar and H/sub 2/ (10 mole%) at various input rf powers in the range from 0.8 to 3.8 W/cm/sup 2/. Hydrogen content mainly due to the configuration of Si=H/sub 2/ in the film increased with the decreasing rf power, as the deposition rate was decreased. On the other hand, the quantity of the monohydride (Si-H) configuration depended less on the power. Attachment of hydrogen molecules onto the fresh and reactive surface of silicon deposited successively was proposed for possible process of hydrogen incusion into amorphous silicon resulting in Si=H/sub 2/ configuration. The photoconductivity increased as the input power became higher, when the deposition rate also increased linearly with the power.

  15. Hydrogenated amorphous silicon coatings may modulate gingival cell response

    Science.gov (United States)

    Mussano, F.; Genova, T.; Laurenti, M.; Munaron, L.; Pirri, C. F.; Rivolo, P.; Carossa, S.; Mandracci, P.

    2018-04-01

    Silicon-based materials present a high potential for dental implant applications, since silicon has been proven necessary for the correct bone formation in animals and humans. Notably, the addition of silicon is effective to enhance the bioactivity of hydroxyapatite and other biomaterials. The present work aims to expand the knowledge of the role exerted by hydrogen in the biological interaction of silicon-based materials, comparing two hydrogenated amorphous silicon coatings, with different hydrogen content, as means to enhance soft tissue cell adhesion. To accomplish this task, the films were produced by plasma enhanced chemical vapor deposition (PECVD) on titanium substrates and their surface composition and hydrogen content were analyzed by means of X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectrophotometry (FTIR) respectively. The surface energy and roughness were measured through optical contact angle analysis (OCA) and high-resolution mechanical profilometry respectively. Coated surfaces showed a slightly lower roughness, compared to bare titanium samples, regardless of the hydrogen content. The early cell responses of human keratinocytes and fibroblasts were tested on the above mentioned surface modifications, in terms of cell adhesion, viability and morphometrical assessment. Films with lower hydrogen content were endowed with a surface energy comparable to the titanium surfaces. Films with higher hydrogen incorporation displayed a lower surface oxidation and a considerably lower surface energy, compared to the less hydrogenated samples. As regards mean cell area and focal adhesion density, both a-Si coatings influenced fibroblasts, but had no significant effects on keratinocytes. On the contrary, hydrogen-rich films increased manifolds the adhesion and viability of keratinocytes, but not of fibroblasts, suggesting a selective biological effect on these cells.

  16. The potential for the fabrication of wires embedded in the crystalline silicon substrate using the solid phase segregation of gold in crystallising amorphous volumes

    International Nuclear Information System (INIS)

    Liu, A.C.Y.; McCallum, J.C.

    2004-01-01

    The refinement of gold in crystallising amorphous silicon volumes was tested as a means of creating a conducting element embedded in the crystalline matrix. Amorphous silicon volumes were created by self-ion-implantation through a mask. Five hundred kiloelectronvolt Au + was then implanted into the volumes. The amorphous volumes were crystallised on a hot stage in air, and the crystallisation was characterised using cross sectional transmission electron microscopy. It was found that the amorphous silicon volumes crystallised via solid phase epitaxy at all the lateral and vertical interfaces. The interplay of the effects of the gold and also the hydrogen that infilitrated from the surface oxide resulted in a plug of amorphous material at the surface. Further annealing at this temperature demonstrated that the gold, once it had reached a certain critical concentration nucleated poly-crystalline growth instead of solid phase epitaxy. Time resolved reflectivity and Rutherford backscattering and channeling measurements were performed on large area samples that had been subject to the same implantation regime to investigate this system further. It was discovered that the crystallisation dynamics and zone refinement of the gold were complicated functions of both gold concentration and temperature. These findings do not encourage the use of this method to obtain conducting elements embedded in the crystalline silicon substrate

  17. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  18. Mossbauer studies of amorphous Fe73.5Cu1Nb3Si13.5B9 alloy

    DEFF Research Database (Denmark)

    Jiang, Jianzhong

    1996-01-01

    This paper reports a Mossbauer study of amorphous Fe73.5Cu1Nb3Si13.5B9 alloy between 10 and 673 K. The Curie temperature Tc is found to be 620-+ 1 K. The temperature dependence of the reduced average hyperfine field can be explained on the basis of Handrich's model of amorphous ferromagnetism...

  19. Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence

    International Nuclear Information System (INIS)

    Bae, I.-T.; Ishimaru, Manabu; Hirotsu, Yoshihiko; Sickafus, Kurt E.

    2004-01-01

    We have investigated the effect of radiation damage and impurity concentration on solid phase epitaxial growth of amorphous silicon carbide (SiC) as well as microstructures of recrystallized layer using transmission electron microscopy. Single crystals of 6H-SiC with (0001) orientation were irradiated with 150 keV Xe ions to fluences of 10 15 and 10 16 /cm 2 , followed by annealing at 890 deg. C. Full epitaxial recrystallization took place in a specimen implanted with 10 15 Xe ions, while retardation of recrystallization was observed in a specimen implanted with 10 16 /cm 2 Xe ions. Atomic pair-distribution function analyses and energy dispersive x-ray spectroscopy results suggested that the retardation of recrystallization of the 10 16 Xe/cm 2 implanted sample is attributed to the difference in amorphous structures between the 10 15 and 10 16 Xe/cm 2 implanted samples, i.e., more chemically disordered atomistic structure and higher Xe impurity concentration in the 10 16 Xe/cm 2 implanted sample

  20. Modeling chemical and topological disorder in irradiation-amorphized silicon carbide

    International Nuclear Information System (INIS)

    Yuan Xianglong; Hobbs, Linn W.

    2002-01-01

    In order to explore the relationship of chemical disorder to topological disorder during irradiation-induced amorphization of silicon carbide, a topological analysis of homonuclear bond distribution, atom coordination number and network ring size distribution has been carried out for imposed simulated disorder, equilibrated with molecular dynamics (MD) procedures utilizing a Tersoff potential. Starting configurations included random atom positions, β-SiC coordinates chemically disordered over a range of chemical disorder parameters and atom coordinates generated from earlier MD simulations of embedded collision cascades. For random starting positions in embedded simulations, the MD refinement converged to an average Si coordination of 4.3 and an average of 1.4 Si-Si and 1.0 C-C bonds per Si and C site respectively. A chemical disorder threshold was observed (χ≡N C-C /N Si-C >0.3-0.4), below which range MD equilibration resulted in crystalline behavior at all temperatures and above which a glass transition was observed. It was thus concluded that amorphization is driven by a critical concentration of homonuclear bonds. About 80% of the density change at amorphization was attributable to threshold chemical disorder, while significant topological changes occurred only for larger values of the chemical disorder parameter

  1. Control and optimization of baths for electrodeposition of Co-Mo-B amorphous alloys

    Directory of Open Access Journals (Sweden)

    S. Prasad

    2000-12-01

    Full Text Available Optimization and control of an electrodeposition process for depositing boron-containing amorphous metallic layer of cobalt-molybdenum alloy onto a cathode from an electrolytic bath having cobalt sulfate, sodium molybdate, boron phosphate, sodium citrate, 1-dodecylsulfate-Na, ammonium sulfate and ammonia or sulfuric acid for pH adjustments has been studied. Detailed studies on bath composition, pH, temperature, mechanical agitation and cathode current density have led to optimum conditions for obtaining satisfactory alloy deposits. These alloys were found to have interesting properties such as high hardness, corrosion resistance, wear resistance and also sufficient ductility. A voltammetric method for automatic monitoring and control of the process has been proposed.

  2. High-field magnetization behavior in random anisotropy amorphous Co-Er alloys

    Science.gov (United States)

    Lassri, H.; Driouch, L.; Krishnan, R.

    1994-05-01

    Amorphous Co1-xErx ribbons with x=55 and 65 were prepared by the melt-spinning technique. Magnetization measurements were carried out in the temperature range 4-100 K under high magnetic fields up to 20 T. Even at 20 T the saturation is not fully attained. Assuming that Co has no moment in the alloy with x=65 the Er moment is found to be 7.0μB which indicates a speromagnetic spin structure. The Co moment in the alloy with x=55 is then found to be 0.1μB, which is negligibly small. By analyzing the approach to saturation using Chudnovsky's theory we have extracted some fundamental parameters.

  3. Effect of ball mill treatment on kinetics of amorphous Ni78Si10B12 alloy crystallization

    International Nuclear Information System (INIS)

    Tomilin, I.A.; Mochalova, T.Yu.; Kaloshkin, S.D.; Kostyukovich, T.G.; Lopatina, E.A.

    1993-01-01

    The effect of the parameters of Ni 78 Si 10 B 12 alloy amorphous strip milling in a ball planetary mill on the stability of powder amorphous state, crytallization kinetics and dispersity is studied by the methods of differential scanning microcaloremetry and X-ray diffraction analysis. Energy intensity of milling conditions is assessed. An increase of input energy results in a decrease of activation energy of powder crystallization. Strip milling parameters which enable to avaintain the amorphous state of the material are determined

  4. Fabrication and structure of bulk nanocrystalline Al-Si-Ni-mishmetal alloys

    International Nuclear Information System (INIS)

    Latuch, Jerzy; Cieslak, Grzegorz; Kulik, Tadeusz

    2007-01-01

    Al-based alloys of structure consisting of nanosized Al crystals, embedded in an amorphous matrix, are interesting for their excellent mechanical properties, exceeding those of the commercial crystalline Al-based alloys. Recently discovered nanocrystalline Al alloys containing silicon (Si), rare earth metal (RE) and late transition metal (Ni), combine high tensile strength and good wear resistance. The aim of this work was to manufacture bulk nanocrystalline alloys from Al-Si-Ni-mishmetal (Mm) system. Bulk nanostructured Al 91-x Si x Ni 7 Mm 2 (x = 10, 11.6, 13 at.%) alloys were produced by ball milling of nanocrystalline ribbons followed by high pressure hot isostating compaction

  5. Corrosion resistance of nickel alloys with chromium and silicon to the red fuming nitric acid

    International Nuclear Information System (INIS)

    Gurvich, L.Ya.; Zhirnov, A.D.

    1994-01-01

    Corrosion and electrochemical behaviour of binary Ni-Cr, Ni-Si nickel and ternary Ni-Cr-Si alloys in the red fuming nitric acid (RFNA) (8-% of HNO 3 +20% of N 2 O 4 ) is studied. It is shown that nickel alloying with chromium improves its corrosion resistance to the red fuming nitric acid. Nickel alloying with silicon in quantities of up to 5 % reduces, and up to 10%-increases abruptly the corrosion resistance with subsequent decrease of the latter after the further increase of concentration. Ni-15% of Cr alloy alloying with silicon increases monotonously the corrosion resistance. 10 refs., 7 figs., 3 tabs

  6. Development of technology of complex aluminum-silicon-chrome alloy with utilization of off grade raw materials

    Directory of Open Access Journals (Sweden)

    A. Mekhtiev

    2015-01-01

    Full Text Available Experimental studies on obtaining a complex aluminum-silicon-chrome alloy (FASCh from Karaganda high-ash coals and high-carbon ferrochromefines were carried out. A method for smelting low-carbon ferrochrome using aluminum-silicon-chrome alloy as a reductant is suggested.

  7. Design of multi materials combining crystalline and amorphous metallic alloys

    International Nuclear Information System (INIS)

    Volland, A.; Ragani, J.; Liu, Y.; Gravier, S.; Suéry, M.; Blandin, J.J.

    2012-01-01

    Highlights: ► Elaboration of multi materials associating metallic glasses and conventional crystalline alloys by co-deformation performed at temperatures close to the glass transition temperature of the metallic glasses. ► Elaboration of filamentary metal matrix composites with a core in metallic glass by co extrusion. ► Sandwich structures produced by co-pressing. ► Detection of atomic diffusion from the glass to the crystalline alloys during the processes. ► Good interfaces between the metallic glasses and the crystalline alloys, as confirmed by mechanical characterisation. - Abstract: Multi materials, associating zirconium based bulk metallic glasses and crystalline metallic alloys like magnesium alloys or copper are elaborated by co-deformation processing performed in the supercooled liquid regions (SLR) of the bulk metallic glasses. Two processes are investigated: co-extrusion and co-pressing. In the first case, filamentary composites with various designs can be produced whereas in the second case sandwich structures are obtained. The experimental window (temperature, time) in which processing can be carried out is directly related to the crystallisation resistance of the glass which requires getting information about the crystallisation conditions in the selected metallic glasses. Thermoforming windows are identified for the studied BMGs by thermal analysis and compression tests in their SLR. The mechanical properties of the produced multi materials are investigated thanks to specifically developed mechanical devices and the interfaces between the amorphous and the crystalline alloys are characterised.

  8. Preliminary modulation transfer function study on amorphous silicon

    International Nuclear Information System (INIS)

    Khairul Anuar Mohd Salleh; Ab Razak Hamzah; Mohd Ashhar Khalid

    2006-01-01

    Modulation Transfer Function, (MTF) is the scientific means of evaluating the fundamental spatial resolution performance of an imaging system. In the study, the modulation transfer function of an amorphous silicon (aSi) sensor array is measured by using Edge Spread Function (ESF) Technique which is extracting a profile from the linearised image of the sharp edge. The Platinum foil is used to determine the ESF. The detector under study was a 2,304 (h) x 3,200 (v) total pixel matrix, 127 μm2 pixel pitch, 57% fill factor and using Gd2O2S:Tb Kodak Lanex Regular as the conversion screen. The ESF measurement is done by using 75 - 100 kV range of x-ray with constant mA. (Author)

  9. Structural Relaxation in Fe78Nb2B20 Amorphous Alloy Studied by Moessbauer Spectroscopy

    International Nuclear Information System (INIS)

    Kansy, J.; Hanc, A.; Rasek, J.; Haneczok, G.; Pajak, L.; Stoklosa, Z.; Kwapulinski, P.

    2011-01-01

    It was shown that soft magnetic properties of Fe 78 Nb 2 B 20 amorphous alloy can be significantly improved by applying 1-h annealing at temperature 623 K (permeability increases even about 8 times). The Moessbauer Spectroscopy technique indicated that the optimized microstructure (corresponding to the maximum magnetic permeability) is free of iron nanograins and should be attributed to annealing out of free volume and a reduction of internal stresses i.e. to the relaxed amorphous phase. (authors)

  10. Computational Evaluation of Amorphous Carbon Coating for Durable Silicon Anodes for Lithium-Ion Batteries

    Science.gov (United States)

    Hwang, Jeongwoon; Ihm, Jisoon; Lee, Kwang-Ryeol; Kim, Seungchul

    2015-01-01

    We investigate the structural, mechanical, and electronic properties of graphite-like amorphous carbon coating on bulky silicon to examine whether it can improve the durability of the silicon anodes of lithium-ion batteries using molecular dynamics simulations and ab-initio electronic structure calculations. Structural models of carbon coating are constructed using molecular dynamics simulations of atomic carbon deposition with low incident energies (1–16 eV). As the incident energy decreases, the ratio of sp2 carbons increases, that of sp3 decreases, and the carbon films become more porous. The films prepared with very low incident energy contain lithium-ion conducting channels. Also, those films are electrically conductive to supplement the poor conductivity of silicon and can restore their structure after large deformation to accommodate the volume change during the operations. As a result of this study, we suggest that graphite-like porous carbon coating on silicon will extend the lifetime of the silicon anodes of lithium-ion batteries. PMID:28347087

  11. Computational Evaluation of Amorphous Carbon Coating for Durable Silicon Anodes for Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Jeongwoon Hwang

    2015-10-01

    Full Text Available We investigate the structural, mechanical, and electronic properties of graphite-like amorphous carbon coating on bulky silicon to examine whether it can improve the durability of the silicon anodes of lithium-ion batteries using molecular dynamics simulations and ab-initio electronic structure calculations. Structural models of carbon coating are constructed using molecular dynamics simulations of atomic carbon deposition with low incident energies (1–16 eV. As the incident energy decreases, the ratio of sp2 carbons increases, that of sp3 decreases, and the carbon films become more porous. The films prepared with very low incident energy contain lithium-ion conducting channels. Also, those films are electrically conductive to supplement the poor conductivity of silicon and can restore their structure after large deformation to accommodate the volume change during the operations. As a result of this study, we suggest that graphite-like porous carbon coating on silicon will extend the lifetime of the silicon anodes of lithium-ion batteries.

  12. Superconductivity and NMR investigations of amorphous Be-Nb-Zr and Be-Mo-Zr alloys

    International Nuclear Information System (INIS)

    Goebbels, J.; Lueders, K.; Freyhardt, H.C.; Reichelt, J.

    1981-01-01

    9 Be NMR investigations and measurements of the superconducting properties and the resistivity are reported for amorphous Besub(32.5)Nbsub(x)Zrsub(67.5-x) and Besub(32.5)Mosub(x)Zrsub(67.5-x) alloys (x = 2.5; 5; 7). Line width analysis suggests an enlarged Nb concentration around the Be sites for the Be-Nb-Zr alloys. Comparing the two types of alloys the Knight shifts are of the same order of magnitude whereas the Tsub(c) and Bsub(c) 2 (0) values are slightly smaller than for the Nb alloys. For Be-Nb-Zr Tsub(c) and K increases with the Nb content. The results are discussed in connection with the density of states N(Esub(F)). (orig.)

  13. Band engineering of amorphous silicon ruthenium thin film and its near-infrared absorption enhancement combined with nano-holes pattern on back surface of silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Anran; Zhong, Hao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Wei, E-mail: wli@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gu, Deen; Jiang, Xiangdong [School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2016-10-30

    Highlights: • The increase of Ru concentration leads to a narrower bandgap of a-Si{sub 1-x}Ru{sub x} thin film. • The absorption coefficient of a-Si{sub 1-x}Ru{sub x} is higher than that of SiGe. • A double-layer absorber comprising of a-Si{sub 1-x}Ru{sub x} film and Si nano-holes layer is achieved. - Abstract: Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its bandgap limit. In this study, a narrow bandgap silicon rich semiconductor is achieved by introducing ruthenium (Ru) into amorphous silicon (a-Si) to form amorphous silicon ruthenium (a-Si{sub 1-x}Ru{sub x}) thin films through co-sputtering. The increase of Ru concentration leads to an enhancement of light absorption and a narrower bandgap. Meanwhile, a specific light trapping technique is employed to realize high absorption of a-Si{sub 1-x}Ru{sub x} thin film in a finite thickness to avoid unnecessary carrier recombination. A double-layer absorber comprising of a-Si{sub 1-x}Ru{sub x} thin film and silicon random nano-holes layer is formed on the back surface of silicon substrates, and significantly improves near-infrared absorption while the leaky light intensity is less than 5%. This novel absorber, combining narrow bandgap thin film with light trapping structure, may have a potential application in near-infrared photoelectronic devices.

  14. Classical molecular dynamics and quantum ab-initio studies on lithium-intercalation in interconnected hollow spherical nano-spheres of amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Bhowmik, A. [Atomic Scale Modelling and Materials, Department of Energy Conversion and Storage, Technical University of Denmark, Rios Campus, Frederiksborgvej 399, DK-4000 Roskilde (Denmark); Malik, R. [Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, 721302 (India); Prakash, S. [Defense Metallurgical Research Laboratory, Hyderabad (India); Sarkar, T.; Bharadwaj, M.D. [Center for Study of Science Technology and Policy, Bangalore 560094 (India); Aich, S. [Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, 721302 (India); Ghosh, S., E-mail: sudipto@metal.iitkgp.ernet.in [Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, 721302 (India)

    2016-04-25

    A high concentration of lithium, corresponding to charge capacity of ∼4200 mAh/g, can be intercalated in silicon. Unfortunately, due to high intercalation strain leading to fracture and consequent poor cyclability, silicon cannot be used as anode in lithium ion batteries. But recently interconnected hollow nano-spheres of amorphous silicon have been found to exhibit high cyclability. The absence of fracture upon lithiation and the high cyclability has been attributed to reduction in intercalation stress due to hollow spherical geometry of the silicon nano-particles. The present work argues that the hollow spherical geometry alone cannot ensure the absence of fracture. Using classical molecular dynamics and density functional theory based simulations; satisfactory explanation to the absence of fracture has been explored at the atomic scale. - Highlights: • Interconnected nanoshells of amorphous Si: best available lithium ion cell anode. • High cycle life not understood in the light of poor K{sub IC} of amorphous Si. • MD reveals: atomic density of interconnected structure is ∼16% less than bulk Si. • Leads to drastic reduction (DFT) in lithiation σ & metal like e{sup −} structure (high K{sub IC}). • Lowering of lithiation σ and increase in K{sub IC} result in high cycle life.

  15. Near infrared photoluminescence of the hydrogenated amorphous silicon thin films with in-situ embedded silicon nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Stuchlík, Jiří; Purkrt, Adam; Ledinský, Martin; Kupčík, Jaroslav

    2017-01-01

    Roč. 61, č. 2 (2017), s. 136-140 ISSN 0862-5468 R&D Projects: GA ČR GC16-10429J Grant - others:AV ČR(CZ) KONNECT-007 Program:Bilaterální spolupráce Institutional support: RVO:68378271 ; RVO:61388980 Keywords : amorphous silicon * chemical vapor deposition * photothermal deflection spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism; CA - Inorganic Chemistry (UACH-T) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Inorganic and nuclear chemistry (UACH-T) Impact factor: 0.439, year: 2016

  16. Wavelength prediction of laser incident on amorphous silicon detector by neural network

    International Nuclear Information System (INIS)

    Esmaeili Sani, V.; Moussavi-Zarandi, A.; Kafaee, M.

    2011-01-01

    In this paper we present a method based on artificial neural networks (ANN) and the use of only one amorphous semiconductor detector to predict the wavelength of incident laser. Amorphous semiconductors and especially amorphous hydrogenated silicon, a-Si:H, are now widely used in many electronic devices, such as solar cells, many types of position sensitive detectors and X-ray imagers for medical applications. In order to study the electrical properties and detection characteristics of thin films of a-Si:H, n-i-p structures have been simulated by SILVACO software. The basic electronic properties of most of the materials used are known, but device modeling depends on a large number of parameters that are not all well known. In addition, the relationship between the shape of the induced anode current and the wavelength of the incident laser leads to complicated calculations. Soft data-based computational methods can model multidimensional non-linear processes and represent the complex input-output relation between the form of the output signal and the wavelength of incident laser.

  17. Wavelength prediction of laser incident on amorphous silicon detector by neural network

    Energy Technology Data Exchange (ETDEWEB)

    Esmaeili Sani, V., E-mail: vaheed_esmaeely80@yahoo.com [Amirkabir University of Technology, Faculty of Physics, P.O. Box 4155-4494, Tehran (Iran, Islamic Republic of); Moussavi-Zarandi, A.; Kafaee, M. [Amirkabir University of Technology, Faculty of Physics, P.O. Box 4155-4494, Tehran (Iran, Islamic Republic of)

    2011-10-21

    In this paper we present a method based on artificial neural networks (ANN) and the use of only one amorphous semiconductor detector to predict the wavelength of incident laser. Amorphous semiconductors and especially amorphous hydrogenated silicon, a-Si:H, are now widely used in many electronic devices, such as solar cells, many types of position sensitive detectors and X-ray imagers for medical applications. In order to study the electrical properties and detection characteristics of thin films of a-Si:H, n-i-p structures have been simulated by SILVACO software. The basic electronic properties of most of the materials used are known, but device modeling depends on a large number of parameters that are not all well known. In addition, the relationship between the shape of the induced anode current and the wavelength of the incident laser leads to complicated calculations. Soft data-based computational methods can model multidimensional non-linear processes and represent the complex input-output relation between the form of the output signal and the wavelength of incident laser.

  18. Structural defects in monocrystalline silicon: from radiation ones to growing and technological

    International Nuclear Information System (INIS)

    Gerasimenko, N.N.; Pavlyuchenko, M.N.; Dzhamanbalin, K.K.

    2001-01-01

    The systematical review of properties and conditions of radiation structures in monocrystalline silicon including own defects (elementary and complex, disordered fields) as well as defect-impurity formations is presented. The most typical examples of principle effects influence of known defects on radiation-induced processes (phase transformations, diffusion and heteration and others are considered. Experimental facts and models of silicon radiation amorphization have been analyzed in comparison of state of the radiation amorphization radiation problem of metals and alloys. The up-to-date status of the problem of the radiation defects physics are discussed, including end-of-range -, n+-, rod-like- defects. The phenomenon self-organization in crystals with defects has been considered. The examples of directed using radiation defects merged in independent trend - defects engineering - are given

  19. Photoluminescence at 1.54 {mu}m of Er-doped hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Bresler, Mikhail; Gusev, Oleg; Kuznetsov, Alexey; Kudoyarova, Vera; Terukov, Evgenii; Yassievich, Irina [A.F. Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Fuhs, Walther [Hahn-Meitner Institut, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin (Germany); Ulber, Isabell; Weiser, Gerhard [Philipps-Universitat Marburg, Fachbereich Physik, D-35032 Marburg (Germany)

    1998-05-11

    Photoluminescence (PL) and light absorption of Er-doped amorphous hydrogenated silicon samples are measured at 77-300K. The temperature dependence of luminescence of erbium ions in a-Si:H(Er) is compared with that of intrinsic PL of a-Si:H. The lifetime of excited erbium ions in this amorphous matrix changes from 20 to 8 {mu}s in this temperature range. We propose a defect-related Auger excitation (DRAE) mechanism of erbium luminescence and demonstrate that it is consistent with the whole set of our experimental results. The temperature quenching of the erbium luminescence observed above 200K, with the activation energy of 250 meV, results from the competition of the DRAE and multiphonon nonradiative defect processes for D{sup 0}+e>D{sup -} transition

  20. Low-emissivity coating of amorphous diamond-like carbon/Ag-alloy multilayer on glass

    International Nuclear Information System (INIS)

    Chiba, Kiyoshi; Takahashi, Toshiyuki; Kageyama, Takashi; Oda, Hironori

    2005-01-01

    Transparent low-emissivity (low-e) coatings comprising dielectrics of amorphous diamond-like carbon (DLC) and Ag-alloy films are investigated. All films have been prepared by dc magnetron sputtering. An index of refraction of the DLC film deposited in a gas mixture of Ar/H 2 (4%) shows n = 1.80 + 0.047i at 500 nm wavelength. A multilayer stack of DLC (70 nm thick)/Ag 87.5 Cu 12.5 -alloy (10 nm)/DLC (140 nm)/Ag 87.5 Cu 12.5 -alloy (10 nm)/DLC (70 nm) has revealed clear interference spectra with spectra selectivity. This coating performs low emittance less than 0.1 for black body radiation at 297 K, exhibiting a transparent heat mirror property embedded in DLC films

  1. Enhanced photocurrent in thin-film amorphous silicon solar cells via shape controlled three-dimensional nanostructures

    International Nuclear Information System (INIS)

    Hilali, Mohamed M; Banerjee, Sanjay; Sreenivasan, S V; Yang Shuqiang; Miller, Mike; Xu, Frank

    2012-01-01

    In this paper, we have explored manufacturable approaches to sub-wavelength controlled three-dimensional (3D) nano-patterns with the goal of significantly enhancing the photocurrent in amorphous silicon solar cells. Here we demonstrate efficiency enhancement of about 50% over typical flat a-Si thin-film solar cells, and report an enhancement of 20% in optical absorption over Asahi textured glass by fabricating sub-wavelength nano-patterned a-Si on glass substrates. External quantum efficiency showed superior results for the 3D nano-patterned thin-film solar cells due to enhancement of broadband optical absorption. The results further indicate that this enhanced light trapping is achieved with minimal parasitic absorption losses in the deposited transparent conductive oxide for the nano-patterned substrate thin-film amorphous silicon solar cell configuration. Optical simulations are in good agreement with experimental results, and also show a significant enhancement in optical absorption, quantum efficiency and photocurrent. (paper)

  2. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Energy Technology Data Exchange (ETDEWEB)

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  3. Band Offsets at the Interface between Crystalline and Amorphous Silicon from First Principles

    Science.gov (United States)

    Jarolimek, K.; Hazrati, E.; de Groot, R. A.; de Wijs, G. A.

    2017-07-01

    The band offsets between crystalline and hydrogenated amorphous silicon (a -Si ∶H ) are key parameters governing the charge transport in modern silicon heterojunction solar cells. They are an important input for macroscopic simulators that are used to further optimize the solar cell. Past experimental studies, using x-ray photoelectron spectroscopy (XPS) and capacitance-voltage measurements, have yielded conflicting results on the band offset. Here, we present a computational study on the band offsets. It is based on atomistic models and density-functional theory (DFT). The amorphous part of the interface is obtained by relatively long DFT first-principles molecular-dynamics runs at an elevated temperature on 30 statistically independent samples. In order to obtain a realistic conduction-band position the electronic structure of the interface is calculated with a hybrid functional. We find a slight asymmetry in the band offsets, where the offset in the valence band (0.29 eV) is larger than in the conduction band (0.17 eV). Our results are in agreement with the latest XPS measurements that report a valence-band offset of 0.3 eV [M. Liebhaber et al., Appl. Phys. Lett. 106, 031601 (2015), 10.1063/1.4906195].

  4. First Measurements of the Performance of New Semitransparent Amorphous Silicon Sensor Prototypes

    International Nuclear Information System (INIS)

    Calderon, A.; Calvo, E.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J. M.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2004-01-01

    We present first results on the performance of a new generation of semitransparent amorphous silicon position detectors having good properties such as an intrinsic position resolution better than 5μm, an spatial point reconstruction precision better than 10 μm, deflection angles smaller than 10μrad and transmission in the visible and NIR higher than 70%. In addition the sensitive area is very large: 30x30 cm 3 . (Author) 10 refs

  5. Charge transfer processes in hybrid solar cells composed of amorphous silicon and organic materials

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Sebastian; Neher, Dieter [Universitaet Potsdam, Inst. Physik u. Astronomie, Karl-Liebknecht-Strasse 24/25, 14467 Potsdam-Golm (Germany); Schulze, Tim; Korte, Lars [Helmholtz Zentrum Berlin, Inst. fuer Silizium Photovoltaik, Kekulestrasse 5, 12489 Berlin (Germany)

    2011-07-01

    The efficiency of hybrid solar cells composed of organic materials and amorphous hydrogenated silicon (a-Si:H) strongly depends upon the efficiency of charge transfer processes at the inorganic-organic interface. We investigated the performance of devices comprising an ITO/a-Si:H(n-type)/a-Si:H(intrinsic)/organic/metal multilayer structure and using two different organic components: zinc phthalocyanine (ZnPc) and poly(3-hexylthiophene) (P3HT). The results show higher power conversion- and quantum efficiencies for the P3HT based cells, compared to ZnPc. This can be explained by larger energy-level offset at the interface between the organic layer and a-Si:H, which facilitates hole transfer from occupied states in the valence band tail to the HOMO of the organic material and additionally promotes exciton splitting. The performance of the a-Si:H/P3HT cells can be further improved by treatment of the amorphous silicon surface with hydrofluoric acid (HF) and p-type doping of P3HT with F4TCNQ. The improved cells reached maximum power conversion efficiencies of 1%.

  6. First-principles study of amorphous Ga4Sb6Te3 phase-change alloys

    Science.gov (United States)

    Bouzid, Assil; Gabardi, Silvia; Massobrio, Carlo; Boero, Mauro; Bernasconi, Marco

    2015-05-01

    First-principles molecular dynamics simulations within the density functional theory framework were performed to generate amorphous models of the Ga4Sb6Te3 phase change alloy by quenching from the melt. We find that Ga-Sb and Ga-Te are the most abundant bonds with only a minor amount of Sb-Te bonds participating to the alloy network. Ga and four-coordinated Sb atoms present a tetrahedral-like geometry, whereas three-coordinated Sb atoms are in a pyramidal configuration. The tetrahedral-like geometries are similar to those of the crystalline phase of the two binary compounds GaTe and GaSb. A sizable fraction of Sb-Sb bonds is also present, indicating a partial nanoscale segregation of Sb. Despite the fact that the composition Ga4Sb6Te3 lies on the pseudobinary Ga Sb -Sb2Te3 tie line, the amorphous network can be seen as a mixture of the two binary compounds GaTe and GaSb with intertwined elemental Sb.

  7. Correlation of electrical transport and magnetism in amorphous Mn-B alloys

    Science.gov (United States)

    Bryden, W. A.; Morgan, J. S.; Kistenmacher, T. J.; Moorjani, K.

    1987-04-01

    X-ray scattering, magnetism, and electrical transport studies on amorphous thin films of MnxB100-x alloys with x=52 and 48 are reported. Each alloy exhibits a low-field (5 G) static susceptibility peak (10 K, x=52; 16 K, x=48) associated with a spin-glass transition. Isothermal magnetization data (6 K) are analyzed within the random anisotropy model of Chudnovsky, Saslow, and Serota. The magnetization isotherm for the x=52 alloy is dominated at high fields (>24 kG) by field-induced moments, while for x=48 a term (αH-1/2) arising from a ferromagnet with a wandering axis prevails to the highest field strength (44 kG). Initially the electrical resistance for these Mn-B alloys decreases monotonically with decreasing temperature, reaching a minimum (Tm) at 22 K (x=52) and 45 K (x=48). For T>Tm, a quadratic form can be effectively employed, with a negative T2 coefficient and a positive linear coefficient. The rise in resistivity for Talloys display only weakly field-dependent (to 10 kG) magnetoresistance.

  8. Enhanced photoluminescence from ring resonators in hydrogenated amorphous silicon thin films at telecommunications wavelengths.

    Science.gov (United States)

    Patton, Ryan J; Wood, Michael G; Reano, Ronald M

    2017-11-01

    We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.

  9. γ-irradiation effect on electronic properties in hydrogenated amorphous silicon

    International Nuclear Information System (INIS)

    Shirafuji, J.; Nagata, S.; Shirakawa, K.

    1986-01-01

    γ-irradiation effect on electron transport and photoelectric properties in glow-discharge hydrogenated amorphous silicon is investigated mainly by means of time-of-flight measurement. Although the electron transport changes from non-dispersive to dispersive when the total dose on γ-rays is increased, the electron mobility at room temperature is affected only slightly by γ-irradiation. The γ-irradiation introduces dominantly Si dangling bonds, allowing to study the recombination characteristic as a function of dangling bond density under controllable conditions. It is found that the electron recombination lifetime is inversely proportional to the dangling bond density. (author)

  10. Adhesive wear of iron chromium nickel silicon manganese molybdenum niobium alloys with duplex structure

    International Nuclear Information System (INIS)

    Lugscheider, E.; Deppe, E.; Ambroziak, A.; Melzer, A.

    1991-01-01

    Iron nickel chromium manganese silicon and iron chromium nickel manganese silicon molybdenum niobium alloys have a so-called duplex structure in a wide concentration range. This causes an excellent resistance to wear superior in the case of adhesive stress with optimized concentrations of manganese, silicon, molybdenum and niobium. The materials can be used for welded armouring structures wherever cobalt and boron-containing alloy systems are not permissible, e.g. in nuclear science. Within the framework of pre-investigations for manufacturing of filling wire electrodes, cast test pieces were set up with duplex structure, and their wear behavior was examined. (orig.) [de

  11. Amorphous Silicon Position Detectors for the Link Alignment System of the CMS Detector: Users Handbook

    International Nuclear Information System (INIS)

    Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F. J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2007-01-01

    We present the general characteristics, calibration procedures and measured performance of the Amorphous Silicon Position Detectors installed in the Link Alignment System of the CMS Detector for laser beam detection and reconstruction and give the Data Base to be used as a Handbook during CMS operation. (Author) 10 refs

  12. Amorphous Silicon Position Detectors for the Link Alignment System of the CMS Detector: Users Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F. J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2007-07-01

    We present the general characteristics, calibration procedures and measured performance of the Amorphous Silicon Position Detectors installed in the Link Alignment System of the CMS Detector for laser beam detection and reconstruction and give the Data Base to be used as a Handbook during CMS operation. (Author) 10 refs.

  13. Structural and phase transformations in the low-temperature annealed amorphous “finemet”-type microwires

    Energy Technology Data Exchange (ETDEWEB)

    Tcherdyntsev, V.V., E-mail: vvch08@yandex.ru [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Aleev, A.A. [SSC RF Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Churyukanova, M.N.; Kaloshkin, S.D. [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Medvedeva, E.V. [Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Yekaterinburg 620016 (Russian Federation); Korchuganova, O.A. [SSC RF Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Zhukova, V. [Dpto. de Fns. Mater., UPV/EHU, San Sebastian 20018 (Spain); Zhukov, A.P. [Dpto. de Fns. Mater., UPV/EHU, San Sebastian 20018 (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

    2014-02-15

    Highlights: • Structure and magnetic properties evolution at heating of amorphous microwires was studied. • Relaxation processes in the amorphous phase correlate with an increase in Curie temperature. • Curie temperature change can not be stabilized by a prolonged exposure at pre-crystallization temperatures. • Tomographic atom probe microscopy supports the formation of α-Fe phase precipitations enriched in Si. -- Abstract: Finemet-type glass-coated microwires with amorphous and nanocrystalline structure have been investigated. The relaxation and crystallization processes at heating of amorphous alloy have been studied by DSC method. We observed that the relaxation processes in the amorphous phase correlate with an increasing of the Curie temperature. Additionally a prolonged exposure of the samples below the crystallization temperatures does not stabilize the Curie temperature change. An investigation by the tomographic atom probe microscopy supports the formation of precipitations, probably α-Fe phase, as a result of low-temperature annealing (400 °C, 5 min). We found that the observed nano-sized areas were enriched in silicon.

  14. Structural and phase transformations in the low-temperature annealed amorphous “finemet”-type microwires

    International Nuclear Information System (INIS)

    Tcherdyntsev, V.V.; Aleev, A.A.; Churyukanova, M.N.; Kaloshkin, S.D.; Medvedeva, E.V.; Korchuganova, O.A.; Zhukova, V.; Zhukov, A.P.

    2014-01-01

    Highlights: • Structure and magnetic properties evolution at heating of amorphous microwires was studied. • Relaxation processes in the amorphous phase correlate with an increase in Curie temperature. • Curie temperature change can not be stabilized by a prolonged exposure at pre-crystallization temperatures. • Tomographic atom probe microscopy supports the formation of α-Fe phase precipitations enriched in Si. -- Abstract: Finemet-type glass-coated microwires with amorphous and nanocrystalline structure have been investigated. The relaxation and crystallization processes at heating of amorphous alloy have been studied by DSC method. We observed that the relaxation processes in the amorphous phase correlate with an increasing of the Curie temperature. Additionally a prolonged exposure of the samples below the crystallization temperatures does not stabilize the Curie temperature change. An investigation by the tomographic atom probe microscopy supports the formation of precipitations, probably α-Fe phase, as a result of low-temperature annealing (400 °C, 5 min). We found that the observed nano-sized areas were enriched in silicon

  15. Research and development of photovoltaic power system. Interface studies of amorphous silicon; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kaimen no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Konagai, M [Tokyo Institute of Technology, Tokyo (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on interface of amorphous silicon for solar cells. In research on amorphous solar cells using ZnO for transparent electrically conductive films, considerations were given on a growth mechanism of a ZnO film using the MOCVD process. It was made clear that the ZnO film grows with Zn(OH)2 working as a film forming species. It was also shown that the larger the ZnO particle size is, the more the solar cell efficiency is improved. Furthermore, theoretical elucidation was made on effects of rear face of an interface on cell characteristics, and experimental discussions were given subsequently. In research on solar cells using hydrogen diluted `i` layers, delta-doped solar cells were fabricated based on basic data obtained in the previous fiscal year, and the hydrogen dilution effect was evaluated from the cell characteristics. When the hydrogen dilution ratio is increased from zero to one, the conversion efficiency has improved from 12.2% to 12.6%. In addition, experiments and discussions were given on solar cells fabricated by using SiH2Cl2. 9 figs.

  16. Monolithic amorphous silicon modules on continuous polymer substrate

    Energy Technology Data Exchange (ETDEWEB)

    Grimmer, D.P. (Iowa Thin Film Technologies, Inc., Ames, IA (United States))

    1992-03-01

    This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

  17. Optical characterisation of sputtered hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Mellassi, K.; Chafik El Idrissi, M.; Chouiyakh, A.; Rjeb, A.; Barhdadi, A.

    2000-09-01

    The present work is devoted to the study of some optical properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by radio-frequency cathodic sputtering technique. It is essentially focused on investigating separately the effects of increasing partial hydrogen pressure during the deposition stage, and the effects of post deposition thermal annealing on the main optical parameters of the deposited layers (refraction index, optical gap Urbach energy, etc.). We show that low hydrogen pressures allow a saturation of the dangling bonds in the material, while high pressures lead to the creation of new defects. We also show that thermal annealing under moderate temperatures allows a good improvement of the structural quality of deposited films. (author)

  18. Ballistic Phonon Penetration Depth in Amorphous Silicon Dioxide.

    Science.gov (United States)

    Yang, Lin; Zhang, Qian; Cui, Zhiguang; Gerboth, Matthew; Zhao, Yang; Xu, Terry T; Walker, D Greg; Li, Deyu

    2017-12-13

    Thermal transport in amorphous silicon dioxide (a-SiO 2 ) is traditionally treated as random walks of vibrations owing to its greatly disordered structure, which results in a mean free path (MFP) approximately the same as the interatomic distance. However, this picture has been debated constantly and in view of the ubiquitous existence of thin a-SiO 2 layers in nanoelectronic devices, it is imperative to better understand this issue for precise thermal management of electronic devices. Different from the commonly used cross-plane measurement approaches, here we report on a study that explores the in-plane thermal conductivity of double silicon nanoribbons with a layer of a-SiO 2 sandwiched in-between. Through comparing the thermal conductivity of the double ribbon samples with that of corresponding single ribbons, we show that thermal phonons can ballistically penetrate through a-SiO 2 of up to 5 nm thick even at room temperature. Comprehensive examination of double ribbon samples with various oxide layer thicknesses and van der Waals bonding strengths allows for extraction of the average ballistic phonon penetration depth in a-SiO 2 . With solid experimental data demonstrating ballistic phonon transport through a-SiO 2 , this work should provide important insight into thermal management of electronic devices.

  19. Effect of irradiation temperature on crystallization of {alpha}-Fe induced by He irradiations in Fe{sub 80}B{sub 20} amorphous alloy

    Energy Technology Data Exchange (ETDEWEB)

    San-noo, Toshimasa; Toriyama, Tamotsu; Wakabayashi, Hidehiko; Iijima, Hiroshi [Musashi Inst. of Tech., Tokyo (Japan); Hayashi, Nobuyuki; Sakamoto, Isao

    1997-03-01

    Since amorphous alloys are generally highly resistant to irradiation and their critical radiation dose is an order of magnitude higher for Fe-B amorphous alloy than Mo-methods, these alloys are expected to become applicable as for fusion reactor materials. The authors investigated {alpha}-Fe crystallization in an amorphous alloy, Fe{sub 80}B{sub 20} using internal conversion electron Moessbauer spectroscopy. The amount of {alpha}-Fe component was found to increase by raising the He-irradiation dose. The target part was modified to enable He ion radiation at a lower temperature (below 400 K) by cooling with Peltier element. Fe{sub 80}B{sub 20} amorphous alloy was cooled to keep the temperature at 300 K and exposed to 40 keV He ion at 1-3 x 10{sup 8} ions/cm{sup 2}. The amount of {alpha}-Fe crystal in each sample was determined. The crystal formation was not observed for He ion radiation below 2 x 10{sup 18} ions/cm{sup 2}, but that at 3 x 10{sup 8} ions/ cm{sup 2} produced a new phase ({delta} +0.40 mm/sec, {Delta} = 0.89 mm/sec). The decrease in the radiation temperature from 430 to 300 K resulted to extremely repress the production of {alpha}-Fe crystal, suggesting that the crystallization induced by He-radiation cascade is highly depending on the radiation temperature. (M.N.)

  20. Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

    2006-01-01

    We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

  1. First Measurements of the Performance of New Semitransparent Amorphous Silicon Sensor Prototypes

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Calvo, E.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J. M.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2004-07-01

    We present first results on the performance of a new generation of semitransparent amorphous silicon position detectors having good properties such as an intrinsic position resolution better than 5{mu}m, an spatial point reconstruction precision better than 10 {mu}m, deflection angles smaller than 10{mu}rad and transmission in the visible and NIR higher than 70%. In addition the sensitive area is very large: 30x30 cm''3. (Author) 10 refs.

  2. Recoil-free Fraction in Amorphous and Nanocrystalline Aluminium Based Alloys

    Science.gov (United States)

    Sitek, Jozef

    2008-10-01

    Aluminium based rapidly quenched alloys of nominal composition Al90Fe7Nb3 and Al94Fe2V4 were studied by Mössbauer spectroscopy. We have measured the recoil-free fraction and thermal shift at room and liquid nitrogen temperature. The frequency modes of atomic vibrations were determined and consequently the characteristic Debye temperature was derived. Characteristic temperature calculated from f-factor was lower than those fitted from second order Doppler shift. This indicates the presence of different frequency modes for amorphous and nanocrystalline states.

  3. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyoung-Rae; Park, Jea-Gun [Hanyang University, Seoul (Korea, Republic of)

    2014-10-15

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V{sub th}) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO{sub x} distributed on the a-IGZO surface reduced the adsorption and the desorption of H{sub 2}O and O{sub 2}. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  4. Low-temperature specific heat of the 'nearly ferromagnetic' amorphous alloy Ysub(0.22)Nisub(0.78)

    International Nuclear Information System (INIS)

    Garoche, P.; Veyssie, J.J.; Lienard, A.; Rebouillat, J.P.

    1979-01-01

    Results of specific heat measurements, between 0.3K and 10 K in magnetic fields up to 75 kOe, on the 'nearly ferromagnetic' amorphous alloy Ysub(0.22)Nisub(0.78) are reported. The results, especially the magnetic field dependence, exclude any appreciable contribution from uniform paramagnons. In contrast a quantitative analysis is obtained in terms of superparamagnetic clusters, demonstrating that the onset of ferromagnetism, as a function of concentration, is inhomogeneous in this amorphous metallic system. (author)

  5. Formation of nanocrystalline phases during decomposition of amorphous Ni-P alloys by continuous linear heating

    Energy Technology Data Exchange (ETDEWEB)

    Revesz, A.; Lendvai, J. [Eoetvoes Lorand Tudomanyegyeten, Budapest (Hungary). Dept. for General Physics; Cziraki, A. [Eoetvoes Univ. (Hungary). Dept. of Solid State Physics; Liebermann, H.H. [Honeywell Amorphous Metals, Morristown, NJ (United States); Bakonyi, I. [Hungarian Academy of Sciences (Hungary). Research Inst. for Solid State Physics and Optics

    2001-05-01

    Differential scanning calorimetry (DSC), powder diffraction and high-resolution X-ray diffraction (XRD), and transmission electron microscopy (TEM) investigations have been performed on melt-quenched amorphous Ni-P alloys with compositions of 18 to 22 at.% P. The calorimetric results revealed different crystallization routes during linear heating below, at and above the eutectic point (19 at.% P) but with the same general transformation scheme as reported previously for electrodeposited and electroless Ni-P amorphous alloys. The composition dependence of the activation energy of the crystallization and the heats evolved during the structural transformations were determined from DSC measurements. The average grain size was derived from XRD line broadening and important information on the crystallization products and their microstructure could be revealed also from the TEM studies. All these findings will have special significance when analysing the results of isothermal annealing experiments to be described in a forthcoming paper. (orig.)

  6. The Effect of Spatial Heterogeneities on Nucleation Kinetics in Amorphous Aluminum Alloys

    Science.gov (United States)

    Shen, Ye

    The mechanical property of the Al based metallic glass could be enhanced significantly by introducing the high number density of Al-fcc nanocrystals (1021 ˜1023 m-3) to the amorphous matrix through annealing treatments, which motivates the study of the nucleation kinetics for the microstructure control. With the presence of a high number density (1025 m-3) of aluminum-like medium range order (MRO), the Al-Y-Fe metallic glass is considered to be spatially heterogeneous. Combining the classical nucleation theory with the structural configuration, a MRO seeded nucleation model has been proposed and yields theoretical steady state nucleation rates consistent with the experimental results. In addition, this model satisfies all the thermodynamic and kinetic constraints to be reasonable. Compared with the Al-Y-Fe system, the primary crystallization onset temperature decreases significantly and the transient delay time (tau) is shorter in the Al-Y-Fe-Pb(In) systems because the insoluble Pb and In nanoparticles in the amorphous matrix served as extrinsic spatial heterogeneity to provide the nucleation sites for Al-fcc precipitation and the high-resolution transmission electron microscopy (HRTEM) images of the Pb-Al interface revealed a good wetting behavior between the Al and Pb nanoparticles. The study of the transient delay time (tau) could provide insight on the transport behavior during the nucleation and a more convenient approach to evaluate the delay time has been developed by measuring the Al-Y-Fe amorphous alloy glass transition temperature (Tg) shift with the increasing annealing time (tannealing) in FlashDSC. The break point in the Tg vs. log(tannealing) plot has been identified to correspond to the delay time by the TEM characterization. FlashDSC tests with different heating rates and different compositions (Al-Y-Fe-Pb and Zn-Mg-Ca-Yb amorphous alloys) further confirmed the break point and delay time relationship. The amorphous matrix composition and the

  7. Thermal stability and primary phase of Al-Ni(Cu)-La amorphous alloys

    International Nuclear Information System (INIS)

    Huang Zhenghua; Li Jinfu; Rao Qunli; Zhou Youhe

    2008-01-01

    Thermal stability and primary phase of Al 85+x Ni 9-x La 6 (x = 0-6) and Al 85 Ni 9-x Cu x La 6 (x = 0-9) amorphous alloys were investigated by X-ray diffraction and differential scanning calorimeter. It is revealed that replacing Ni in the Al 85 Ni 9 La 6 alloy by Cu decreases the thermal stability and makes the primary phase change from intermetallic compounds to single fcc-Al as the Cu content reaches and exceeds 4 at.%. When the Ni and La contents are fixed, replacing Al by Cu increases the thermal stability but also promotes the precipitation of single fcc-Al as the primary phase

  8. Crystallization processes in an amorphous Co-Fe-Cr-Si-B alloy under isothermal annealing

    Science.gov (United States)

    Fedorets, A. N.; Pustovalov, E. V.; Plotnikov, V. S.; Modin, E. B.; Kraynova, G. S.; Frolov, A. M.; Tkachev, V. V.; Tsesarskaya, A. K.

    2017-09-01

    Research present the crystallization processes investigation of the amorphous Co67Fe3Cr3Si15B12 alloy. In-situ experiments on heating in a transmission electron microscope (TEM) column were carried out. Critical temperatures influencing material structure are determined. The onset temperature of material crystallization was determined.

  9. Thermally induced crystallization of amorphous Fe40Ni40P14B6 alloy

    Czech Academy of Sciences Publication Activity Database

    Vasić, M.; Blagojević, V. A.; Begović, N. N.; Žák, Tomáš; Pavlović, V. B.; Minić, Dragica M.

    2015-01-01

    Roč. 614, AUG (2015), s. 129-136 ISSN 0040-6031 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 Institutional support: RVO:68081723 Keywords : Amorphous alloy * Crystallization * Kinetics * Deconvolution * Impingement * Surface morphology Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.938, year: 2015

  10. Redistribution of erbium during the crystallization of buried amorphous silicon layers

    International Nuclear Information System (INIS)

    Aleksandrov, O.V.; Nikolaev, Yu.A.; Sobolev, N.A.; Sakharov, V.I.; Serenkov, I.T.; Kudryavtsev, Yu.A.

    1999-01-01

    The redistribution of Er during its implantation in silicon at doses close to the amorphization threshold and its subsequent solid-phase epitaxial (SPE) crystallization is investigated. The formation of a buried amorphous (a) layer is discovered at Er doses equal to 5x10 13 and 1x10 14 cm -2 using Rutherford backscattering. The segregation of Er in this case takes place inwardly from the two directions corresponding to the upper and lower boundaries of the buried αlayer and leads to the formation of a concentration peak at the meeting place of the two crystallization fronts. A method for calculating the coordinate dependence of the segregation coefficient k from the distribution profiles of the erbium impurity before and after annealing is proposed. The k(x) curve exhibits a drop, whose width increases with decreasing Er implantation dose. Its appearance is attributed to the nonequilibrium nature of the segregation process at the beginning of SPE crystallization

  11. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters; Preparacion y Caracterizacion de Dispositivos Fotovoltaicos de Silicio Amorfo con Emisiones Microcristalinos

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J. [CIEMAT. Madrid (Spain)

    1999-11-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p-and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)

  12. Effect of deposition and annealing conditions on the optical properties of amorphous silicon

    International Nuclear Information System (INIS)

    Mashin, A.I.; Ershov, A.V.; Khokhlov, D.A.

    1998-01-01

    The spectral characteristics of the refractive index and the extinction coefficient in the range 0.6-2.0 eV for amorphous silicon films prepared by electron-beam evaporation with variation of the substrate temperature, deposition rate, and annealing temperature in air are presented. The results obtained are discussed on the basis of the changes in the Penn gap energy as a function of the indicated preparation and treatment conditions

  13. Short-range order of amorphous FeNiB alloy after neutron irradiation

    International Nuclear Information System (INIS)

    Miglierini, M.; Sitek, J.; Baluch, S.; Cirak, J.; Lipka, J.

    1990-01-01

    Transmission Moessbauer spectroscopy was used to study irradiation-induced changes in the short-range order of an amorphous Fe 80-x Ni x B 20 alloy. Neutron irradiation led to an increase of the width of a hyperfine field distribution implying atomic rearrangement towards disordering. Changes in a mean value of a HFD and Moessbauer line areas can be associated with a reorientation of spins due to radiation damage. (orig.)

  14. Directional and short-range ordering kinetics in metallic alloys, crystalline and amorphous

    International Nuclear Information System (INIS)

    Hillairet, J.

    1985-01-01

    This presentation describes the methods (resistometric and anelastic) based on analysis of stress-induced directional ordering and short-range ordering and their application to the study of metallic alloys, crystalline and amorphous. It focuses on the determination of the atomic mobility and point defect properties. It discusses also the structural information which can be gained by Zener relaxation studies about the order-disorder transition and self-induced directional ordering phenomena

  15. Characterization of oxide layers on amorphous Mg-based alloys by Auger electron spectroscopy with sputter depth profiling

    Energy Technology Data Exchange (ETDEWEB)

    Baunack, S.; Wolff, U. [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung Dresden, Postfach 270016, 01171, Dresden (Germany); Subba Rao, R.V. [Indira Ghandi Centre for Atomic Research, 603 102, Kalpakkam, Tamil Nadu (India)

    2003-04-01

    Amorphous ribbons of Mg-Y-TM-[Ag](TM: Cu, Ni), prepared by melt spinning, were subjected to electrochemical investigations. Oxide layers formed anodically under potentiostatic control in different electrolytes were investigated by AES and sputter depth profiling. Problems and specific features of characterization of the composition of oxide layers and amorphous ternary or quaternary Mg-based alloys have been investigated. In the alloys the Mg(KL{sub 23}L{sub 23}) peak exhibits a different shape compared to that in the pure element. Analysis of the peak of elastically scattered electrons proved the absence of plasmon loss features, characteristic of pure Mg, in the alloy. A different loss feature emerges in Mg(KL{sub 23}L{sub 23}) and Cu(L{sub 23}VV). The system Mg-Y-TM-[Ag] suffers preferential sputtering. Depletion of Mg and enrichment of TM and Y are found. This is attributed mainly to the preferential sputtering of Mg. Thickness and composition of the formed oxide layer depend on the electrochemical treatment. After removing the oxide by sputtering the concentration of the underlying alloy was found to be affected by the treatment. (orig.)

  16. Extended x-ray absorption fine structure studies of amorphous and crystalline Si-Ge alloys with synchrotron radiation

    International Nuclear Information System (INIS)

    Kajiyama, Hiroshi

    1988-01-01

    Extended X-ray absorption fine structure (EXAFS) is a powerful probe to study the local structure around the atom of a specific element. In conventional EXAFS analysis, it has been known that reliable structures are obtained with the different values of absorption edge energy for different neighboring atoms. It is shown in this study that the Ge-K edge EXAFS resulting from the Ge-Ge and Ge-Si bonds in hydrogenated amorphous Si-Ge alloys was able to be excellently explained by a unique absorption edge energy value, provided that a newly developed formula based on the spherical wave function of photoelectrons is used. The microscopic structures of hydrogenated amorphous Si-Ge alloys and crystalline Si-Ge alloys have been determined using the EXAFS method. The lengths of Ge-Ge and Ge-Si bonds were constant throughout their entire composition range, and it was found that the length of Ge-Si bond was close to the average value of the bond lengths of both Ge and Si crystals. In crystalline Si-Ge alloys, it has been shown that the bonds relaxed completely, while the lattice constant varied monotonously with the composition. (Kako, I.)

  17. The effect of primary recoil spectrum on radiation induced segregation in nickel-silicon alloys

    Science.gov (United States)

    Averback, R. S.; Rehn, L. E.; Wagner, W.; Ehrhart, P.

    1983-08-01

    Segregation of silicon to the surface of Ni-12.7 at% Si alloys during 2.0-MeV He and 3.25-MeV Kr irradiations was measured using Rutherford backscattering spectrometry. For equal calculated defect production rates the Kr irradiation was Ni-Si alloys is presented which qualitatively explains the segregation results. The model assumes that small interstitial-atom-clusters form in individual cascades and that these clusters become trapped at silicon solute atoms. The vacancy thereby becomes the more mobile defect. The model should also have relevance for the observation that void swelling in nickel is suppressed by the addition of silicon solute.

  18. Photostability Assessment in Amorphous-Silicon Solar Cells; Determinacion de la Fotoestabilidad en Celulas Solares de Silicio Amorfo

    Energy Technology Data Exchange (ETDEWEB)

    Gandia, J. J.; Carabe, J.; Fabero, F.; Jimenez, R.; Rivero, J. M. [Ciemat, Madrid (Spain)

    2000-07-01

    The present status of amorphous-silicon-solar-cell research and development at CIEMAT requires the possibility to characterise the devices prepared from the point of view of their stability against sunlight exposure. Therefore a set of tools providing such a capacity has been developed. Together with an introduction to photovoltaic applications of amorphous silicon and to the photodegradation problem, the present work describes the process of setting up these tools. An indoor controlled-photodegradation facility has been designed and built, and a procedure has been developed for the measurement of J-V characteristics in well established conditions. This method is suitable for a kinds of solar cells, even for those for which no model is still available. The photodegradation and characterisation of some cells has allowed to validate both the new testing facility and method. (Author) 14 refs.

  19. Cluster-assisted nucleation of silicon phase in hypoeutectic Al–Si alloy with further inoculation

    International Nuclear Information System (INIS)

    Zhang, Yong; Zheng, Hongliang; Liu, Yue; Shi, Lei; Xu, Rongfu; Tian, Xuelei

    2014-01-01

    The paper discusses the responses of eutectic silicon and eutectic cells in Al–10Si alloy upon inoculation with an Al–10Si–2Fe master alloy. The further inoculation hardly destroys the modification effect of Sr but significantly refines the eutectic cells in Sr-modified samples, while in unmodified samples, it stimulates the occurrences of polyhedral silicon particles and divorced eutectic. Thermal analysis, scanning electron microscopy, (high-resolution) transmission electron microscopy and scanning and transmission electron microscopy have been used to elucidate the underlying mechanism. A cluster-assisted nucleation mechanism responsible for the enhanced nucleation of silicon phase upon inoculation is proposed. Icosahedral (AlFeSi) clusters are speculated to evolve from the added Al–10Si–2Fe master alloy in Al–10Si melt, around which aggregations of silicon atoms form. Through a series of structural evolutions, these clusters transform into precursors of a silicon crystal. The subsequent formation of silicon particles is achieved by the agglomerations and attachments of these precursors and individual silicon atoms. This hypothesis is further consolidated by the increased characteristic temperatures of eutectic and the anomalous appearance of a high density of nanoscale particles, as well as the abnormal disappearance of Sr-induced twins in further inoculated silicon particles. The increased characteristic temperatures are strong indications of the enhanced nucleation of the silicon phase. The high density of nanoscale particles with an indeterminate crystal structure are the survivors of these precursors. In an Sr-modified and further inoculated sample, the formation of Sr-induced twins is consequently inhibited due to the participation of these precursors during the growth of silicon particles. Furthermore, based on the proposed nucleation mechanism, the dependence of eutectic cell size on Sr level is elucidated in detail

  20. Results from multipoint alignment monitoring using the new generation of amorphous silicon position detectors

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, 28040 Madrid (Spain); Ferrando, A. [CIEMAT, 28040 Madrid (Spain)], E-mail: antonio.ferrando@ciemat.es; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, 28040 Madrid (Spain); Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L. [Instituto de Fisica de Cantabria (IFCA), CSIC-University of Cantabria Santander (Spain)] (and others)

    2008-08-11

    We present the measured performance of a new generation of large sensitive area (28x28 mm{sup 2}) semitransparent amorphous silicon position detector sensors. More than 100 units have been characterized. They show a very high performance. To illustrate a multipoint application, we present results from the monitoring of five sensors placed in a 5.5-m-long light path.

  1. Results from multipoint alignment monitoring using the new generation of amorphous silicon position detectors

    International Nuclear Information System (INIS)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L.

    2008-01-01

    We present the measured performance of a new generation of large sensitive area (28x28 mm 2 ) semitransparent amorphous silicon position detector sensors. More than 100 units have been characterized. They show a very high performance. To illustrate a multipoint application, we present results from the monitoring of five sensors placed in a 5.5-m-long light path

  2. Density of states in Mo-Ru amorphous alloys

    International Nuclear Information System (INIS)

    Miyakawa, W.

    1985-01-01

    The density of states is calculated for several compositions of amorphous Mo 1-x Ru x . In order to simulate amorphous clusters, the structures (atomic positions) utilized in the calculations were built from a small dense randomly packed unit of hard spheres with periodic boundary conditions. The density of states is calculated from a tight-binding Hamiltonian with hopping integrals parametrized in terms of the ddσ, ddΠ and ddδ molecular integrals. The results for pure Mo and pure Ru, compared in the canonical band aproximation, agree well with the literature. For binary alloys, the comparison of the calculated density of states with the rigid band aproximation results indicates that a more complex approach than the rigid band model must be used, even when the two atoms have similar bands, with band centers at nearly the same energy. The results also indicate that there is no relation between the peak in the superconducting critical temperature as a function of the number of valence eletrons per atom (e/a) in the region near Mo(e/a=6) and the peak of the density of states at the Fermi level in the same region, as has been sugested by some authors. (Author) [pt

  3. Development of amorphous silicon based EUV hardmasks through physical vapor deposition

    Science.gov (United States)

    De Silva, Anuja; Mignot, Yann; Meli, Luciana; DeVries, Scott; Xu, Yongan; Seshadri, Indira; Felix, Nelson M.; Zeng, Wilson; Cao, Yong; Phan, Khoi; Dai, Huixiong; Ngai, Christopher S.; Stolfi, Michael; Diehl, Daniel L.

    2017-10-01

    Extending extreme ultraviolet (EUV) single exposure patterning to its limits requires more than photoresist development. The hardmask film is a key contributor in the patterning stack that offers opportunities to enhance lithographic process window, increase pattern transfer efficiency, and decrease defectivity when utilizing very thin film stacks. This paper introduces the development of amorphous silicon (a-Si) deposited through physical vapor deposited (PVD) as an alternative to a silicon ARC (SiARC) or silicon-oxide-type EUV hardmasks in a typical trilayer patterning scheme. PVD offers benefits such as lower deposition temperature, and higher purity, compared to conventional chemical vapor deposition (CVD) techniques. In this work, sub-36nm pitch line-space features were resolved with a positive-tone organic chemically-amplified resist directly patterned on PVD a-Si, without an adhesion promotion layer and without pattern collapse. Pattern transfer into the underlying hardmask stack was demonstrated, allowing an evaluation of patterning metrics related to resolution, pattern transfer fidelity, and film defectivity for PVD a-Si compared to a conventional tri-layer patterning scheme. Etch selectivity and the scalability of PVD a-Si to reduce the aspect ratio of the patterning stack will also be discussed.

  4. Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

    Science.gov (United States)

    Jagannathan, Basanth

    Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

  5. Study on the substrate-induced crystallisation of amorphous SiC-precursor ceramics. TIB/A; Untersuchungen zur substratinduzierten Kristallisation amorpher SiC-Precursorkeramiken

    Energy Technology Data Exchange (ETDEWEB)

    Rau, C.

    2000-12-01

    In the present thesis the crystallization behaviour of amorphous silicon-carbon materials (SiC{sub x}) was studied. The main topic of the experimental studies formed thereby the epitactical crystallization of thin silicon carbide layers on monocrystalline substrates of silicon carbides or silicon. Furthermore by thermolysis of the polymer amorphous SiC{sub x}-powder was obtained.

  6. High damage tolerance of electrochemically lithiated silicon

    Science.gov (United States)

    Wang, Xueju; Fan, Feifei; Wang, Jiangwei; Wang, Haoran; Tao, Siyu; Yang, Avery; Liu, Yang; Beng Chew, Huck; Mao, Scott X.; Zhu, Ting; Xia, Shuman

    2015-01-01

    Mechanical degradation and resultant capacity fade in high-capacity electrode materials critically hinder their use in high-performance rechargeable batteries. Despite tremendous efforts devoted to the study of the electro–chemo–mechanical behaviours of high-capacity electrode materials, their fracture properties and mechanisms remain largely unknown. Here we report a nanomechanical study on the damage tolerance of electrochemically lithiated silicon. Our in situ transmission electron microscopy experiments reveal a striking contrast of brittle fracture in pristine silicon versus ductile tensile deformation in fully lithiated silicon. Quantitative fracture toughness measurements by nanoindentation show a rapid brittle-to-ductile transition of fracture as the lithium-to-silicon molar ratio is increased to above 1.5. Molecular dynamics simulations elucidate the mechanistic underpinnings of the brittle-to-ductile transition governed by atomic bonding and lithiation-induced toughening. Our results reveal the high damage tolerance in amorphous lithium-rich silicon alloys and have important implications for the development of durable rechargeable batteries. PMID:26400671

  7. Enhanced electrochemical etching of ion irradiated silicon by localized amorphization

    Energy Technology Data Exchange (ETDEWEB)

    Dang, Z. Y.; Breese, M. B. H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore Singapore 117542 (Singapore); Lin, Y.; Tok, E. S. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Vittone, E. [Physics Department, NIS Excellence Centre and CNISM, University of Torino, via Pietro Giuria 1, 10125 Torino (Italy)

    2014-05-12

    A tailored distribution of ion induced defects in p-type silicon allows subsequent electrochemical anodization to be modified in various ways. Here we describe how a low level of lattice amorphization induced by ion irradiation influences anodization. First, it superposes a chemical etching effect, which is observable at high fluences as a reduced height of a micromachined component. Second, at lower fluences, it greatly enhances electrochemical anodization by allowing a hole diffusion current to flow to the exposed surface. We present an anodization model, which explains all observed effects produced by light ions such as helium and heavy ions such as cesium over a wide range of fluences and irradiation geometries.

  8. Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

    Science.gov (United States)

    Ji, Xiaoyu; Cheng, Hiu Yan; Grede, Alex J.; Molina, Alex; Talreja, Disha; Mohney, Suzanne E.; Giebink, Noel C.; Badding, John V.; Gopalan, Venkatraman

    2018-04-01

    Conformally coating textured, high surface area substrates with high quality semiconductors is challenging. Here, we show that a high pressure chemical vapor deposition process can be employed to conformally coat the individual fibers of several types of flexible fabrics (cotton, carbon, steel) with electronically or optoelectronically active materials. The high pressure (˜30 MPa) significantly increases the deposition rate at low temperatures. As a result, it becomes possible to deposit technologically important hydrogenated amorphous silicon (a-Si:H) from silane by a simple and very practical pyrolysis process without the use of plasma, photochemical, hot-wire, or other forms of activation. By confining gas phase reactions in microscale reactors, we show that the formation of undesired particles is inhibited within the microscale spaces between the individual wires in the fabric structures. Such a conformal coating approach enables the direct fabrication of hydrogenated amorphous silicon-based Schottky junction devices on a stainless steel fabric functioning as a solar fabric.

  9. Si-H bond dynamics in hydrogenated amorphous silicon

    Science.gov (United States)

    Scharff, R. Jason; McGrane, Shawn D.

    2007-08-01

    The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( 4ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84cm-1 and decreases slightly with vibrational frequency. The 1→2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation [Appl. Phys. Lett. 31, 292 (1977)] in a-Si:H based solar cells.

  10. Adopting a customer-focused team approach to amorphous silicon multijunction module R ampersand D

    International Nuclear Information System (INIS)

    Peterson, T.M.; Luft, W.

    1993-01-01

    Informed observers of energy markets now generally believe that photovoltaics (PV) will not significantly penetrate the utility bulk-power sector before price and performance approach $50/m 2 for 15% efficient modules in flat-plate systems. Recent progress toward such ''utility grade'' modules using amorphous thin films has been slow. The important amorphous thin-film research issues have been well known for some years. These have not been promptly and conclusively addressed, at least in part, because of inadequate PV industry involvement in academic research. In view of this situation, the authors recently modified their research programs seeking to improve the efficiency of amorphous silicon PV research, conclusively address the key issues, and accelerate commercial introduction of utility-grade products. They began this by seeking ''customer'' (PV industry) specification of research priorities and forming mission-oriented teams to pursue the high-priority issues (customer requirements). This paper describes the process and results to date

  11. Metallurgical structures in a high uranium-silicon alloy

    International Nuclear Information System (INIS)

    Wyatt, B.S.; Berthiaume, L.C.; Conversi, J.L.

    1968-10-01

    The effects of fabrication and heat treatment variables on the structure of a uranium -- 3.96 wt% silicon alloy have been studied using optical microscopy, quantitative metallography and hardness determinations. It has been shown that an optimum temperature exists below the peritectoid temperature where the maximum amount of transformation to U 3 Si occurs in a given period of time. The time required to fully transform an as-cast alloy at this optimum temperature is affected by the size of the primary U 3 Si 2 dendrites. With a U 3 Si 2 particle size of <12 μm complete transformation can be achieved in four hours. (author)

  12. Metal Amorphous Nanocomposite (MANC) Alloy Cores with Spatially Tuned Permeability for Advanced Power Magnetics Applications

    Science.gov (United States)

    Byerly, K.; Ohodnicki, P. R.; Moon, S. R.; Leary, A. M.; Keylin, V.; McHenry, M. E.; Simizu, S.; Beddingfield, R.; Yu, Y.; Feichter, G.; Noebe, R.; Bowman, R.; Bhattacharya, S.

    2018-06-01

    Metal amorphous nanocomposite (MANC) alloys are an emerging class of soft magnetic materials showing promise for a range of inductive components targeted for higher power density and higher efficiency power conversion applications including inductors, transformers, and rotating electrical machinery. Magnetization reversal mechanisms within these alloys are typically determined by composition optimization as well as controlled annealing treatments to generate a nanocomposite structure composed of nanocrystals embedded in an amorphous precursor. Here we demonstrate the concept of spatially varying the permeability within a given component for optimization of performance by using the strain annealing process. The concept is realized experimentally through the smoothing of the flux profile from the inner to outer core radius achieved by a monotonic variation in tension during the strain annealing process. Great potential exists for an extension of this concept to a wide range of other power magnetic components and more complex spatially varying permeability profiles through advances in strain annealing techniques and controls.

  13. Innovative Characterization of Amorphous and Thin-Film Silicon for Improved Module Performance: 1 February 2005 - 31 July 2008

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P. C.; Williams, G. A.

    2009-09-01

    Electron spin resonance and nuclear magnetic resonance was done on amorphous silicon samples (modules with a-Si:H and a-SixGe1-x:H intrinsic layer) to study defects that contribute to Staebler-Wronski effect.

  14. Construction process and read-out electronics of amorphous silicon position detectors for multipoint alignment monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, C.; Schubert, M.B.; Lutz, B.; Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)], E-mail: antonio.ferrando@ciemat.es; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, Madrid (Spain); Calderon, A.; Fernandez, M.G.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F. [Instituto de Fisica de Cantabria IFCA/CSIC-University of Cantabria, Santander (Spain)] (and others)

    2009-09-01

    We describe the construction process of large-area high-performance transparent amorphous silicon position detecting sensors. Details about the characteristics of the associated local electronic board (LEB), specially designed for these sensors, are given. In addition we report on the performance of a multipoint alignment monitoring application of 12 sensors in a 13 m long light path.

  15. The effects of thermal annealing in structural and optical properties of RF sputtered amorphous silicon

    International Nuclear Information System (INIS)

    Abdul Fatah Awang Mat

    1988-01-01

    The effect of thermal annealing on structural and optical properties of amorphous silicon are studied on samples prepared by radio-frequency sputtering. The fundamental absorption edge of these films are investigated at room temperature and their respective parameters estimated. Annealing effect on optical properties is interpreted in terms of the removal of voids and a decrease of disorder. (author)

  16. Effect of chromium and phosphorus on the physical properties of iron and titanium-based amorphous metallic alloy films

    Science.gov (United States)

    Distefano, S.; Rameshan, R.; Fitzgerald, D. J.

    1991-01-01

    Amorphous iron and titanium-based alloys containing various amounts of chromium, phosphorus, and boron exhibit high corrosion resistance. Some physical properties of Fe and Ti-based metallic alloy films deposited on a glass substrate by a dc-magnetron sputtering technique are reported. The films were characterized using differential scanning calorimetry, stress analysis, SEM, XRD, SIMS, electron microprobe, and potentiodynamic polarization techniques.

  17. Damage-free laser patterning of silicon nitride on textured crystalline silicon using an amorphous silicon etch mask for Ni/Cu plated silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bailly, Mark S., E-mail: mbailly@asu.edu; Karas, Joseph; Jain, Harsh; Dauksher, William J.; Bowden, Stuart

    2016-08-01

    We investigate the optimization of laser ablation with a femtosecond laser for direct and indirect removal of SiN{sub x} on alkaline textured c-Si. Our proposed resist-free indirect removal process uses an a-Si:H etch mask and is demonstrated to have a drastically improved surface quality of the laser processed areas when compared to our direct removal process. Scanning electron microscope images of ablated sites show the existence of substantial surface defects for the standard direct removal process, and the reduction of those defects with our proposed process. Opening of SiN{sub x} and SiO{sub x} passivating layers with laser ablation is a promising alternative to the standard screen print and fire process for making contact to Si solar cells. The potential for small contacts from laser openings of dielectrics coupled with the selective deposition of metal from light induced plating allows for high-aspect-ratio metal contacts for front grid metallization. The minimization of defects generated in this process would serve to enhance the performance of the device and provides the motivation for our work. - Highlights: • Direct laser removal of silicon nitride (SiN{sub x}) damages textured silicon. • Direct laser removal of amorphous silicon (a-Si) does not damage textured silicon. • a-Si can be used as a laser patterned etch mask for SiN{sub x}. • Chemically patterned SiN{sub x} sites allow for Ni/Cu plating.

  18. Contribution to the analysis of hydrogenated amorphous silicon by nuclear methods

    International Nuclear Information System (INIS)

    Jeannerot, Luc.

    1981-01-01

    The physico chemical characterization of hydrogenated amorphous silicon thin films (0,5 to 2 μm thick) makes use of nuclear microanalysis for quantitative determination and depth profiling of the elements hydrogen, oxygen, argon and carbon. Concerning the methods, performances of the hydrogen analysis using the 1 H( 15 N, αγ) nuclear reaction are presented emphasizing the precision and the analytical consequences of the interaction ion-material. For charged particles data processing (mainly Rutherford backscattering) computer treatments have been developed either for concentration profile obtention as for spectra prediction of given material configurations. The essential results concerning hydrogenated silicon prepared by RF sputtering are on one hand the correlation between the oxygen incorporation and the beam-induced hydrogen effusion and in the other hand the role of the substrate in the impurities incorporation. From the study of the elaboration conditions of the material a tentative interpretation is made for the incorporation and the role of oxygen [fr

  19. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  20. Research of the welding of amorphous Co-based alloys in shape of foils with Nd: YAG-LASER

    International Nuclear Information System (INIS)

    Runchev, Dobre

    1996-01-01

    In this study the results concerning the research of the welding of amorphous Co-based alloys in form of foils, with impulsive Nd: YAG LASER are given. The welding was effected on alloys with manufactured sign VAC 6025, VAC 6030, VAC 6150 as well as with different chemical structure and dimensions. Two overlapped foils of the same alloy have been connected with 6 welded spots, under laboratory conditions and in air surrounding. The welding was effected only with negative focus position (-Def.). The basic aim of the researches is the production of a spot welded joints by preserving the amorphous structure of the material. To achieve this purpose, examinations of the optical characteristics of the welded alloys were effected, by measuring the reflective energy of the laser beam from the surface of the AMF. The quality of the spot welded joint is established by shearing examination, measuring of the microhardness, metallographic examinations of the structure by both light microscope and SEM, as well as measuring of the welded spot diameter. After the examinations and the analysis of the achieved results, it is defined that the welding of AMF A and B the established aim was achieved. The welded spots ware with good quality, the structure remained amorphous and the mechanical characteristics, such as Rm and HV0, 2 were at the level of the basic materials. During the welding of AMF C, D and E, the established aim was not achieved. The welded spots ware with bad quality, as a result of the appeared crystal structure in the welded spots. The experimental researches presented in this study, have been carried out in the Technical University in Berlin. (author)